Influence of hole transport material/metal contact interface on perovskite solar cells.

PubMed

Lei, Lei; Zhang, Shude; Yang, Songwang; Li, Xiaomin; Yu, Yu; Wei, Qingzhu; Ni, Zhichun; Li, Ming

2018-06-22

Interfaces have a significant impact on the performance of perovskite solar cells. This work investigated the influence of hole transport material/metal contact interface on photovoltaic behaviours of perovskite solar devices. Different hole material/metal contact interfaces were obtained by depositing the metal under different conditions. High incident kinetic energy metal particles were proved to penetrate and embed into the hole transport material. These isolated metal particles in hole transport materials capture holes and increase the apparent carrier transport resistance of the hole transport layer. Sample temperature was found to be of great significance in metal deposition. Since metal vapour has a high temperature, the deposition process accumulated a large amount of heat. The heat evaporated the additives in the hole transport layer and decreased the hole conductivity. On the other hand, high temperature may cause iodization of the metal contact.

Etching nano-holes in silicon carbide using catalytic platinum nano-particles

NASA Astrophysics Data System (ADS)

Moyen, E.; Wulfhekel, W.; Lee, W.; Leycuras, A.; Nielsch, K.; Gösele, U.; Hanbücken, M.

2006-09-01

The catalytic reaction of platinum during a hydrogen etching process has been used to perform controlled vertical nanopatterning of silicon carbide substrates. A first set of experiments was performed with platinum powder randomly distributed on the SiC surface. Subsequent hydrogen etching in a hot wall reactor caused local atomic hydrogen production at the catalyst resulting in local SiC etching and hole formation. Secondly, a highly regular and monosized distribution of Pt was obtained by sputter deposition of Pt through an Au membrane serving as a contact mask. After the lift-off of the mask, the hydrogen etching revealed the onset of well-controlled vertical patterned holes on the SiC surface.

Laser processing of solar cells with anti-reflective coating

DOEpatents

Harley, Gabriel; Smith, David D.; Dennis, Tim; Waldhauer, Ann; Kim, Taeseok; Cousins, Peter John

2016-02-16

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Laser process and corresponding structures for fabrication of solar cells with shunt prevention dielectric

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harley, Gabriel; Smith, David D.; Dennis, Tim

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2015-07-21

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David; Cousins, Peter

2012-12-04

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.

Solar cell contact formation using laser ablation

DOEpatents

Harley, Gabriel; Smith, David D.; Cousins, Peter John

2014-07-22

The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline materiat layer; and forming conductive contacts in the plurality of contact holes.

Fabricating solar cells with silicon nanoparticles

DOEpatents

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Stress analysis method for clearance-fit joints with bearing-bypass loads

NASA Technical Reports Server (NTRS)

Naik, R. A.; Crews, J. H., Jr.

1989-01-01

Within a multi-fastener joint, fastener holes may be subjected to the combined effects of bearing loads and loads that bypass the hole to be reacted elsewhere in the joint. The analysis of a joint subjected to search combined bearing and bypass loads is complicated by the usual clearance between the hole and the fastener. A simple analysis method for such clearance-fit joints subjected to bearing-bypass loading has been developed in the present study. It uses an inverse formulation with a linear elastic finite-element analysis. Conditions along the bolt-hole contact arc are specified by displacement constraint equations. The present method is simple to apply and can be implemented with most general purpose finite-element programs since it does not use complicated iterative-incremental procedures. The method was used to study the effects of bearing-bypass loading on bolt-hole contact angles and local stresses. In this study, a rigid, frictionless bolt was used with a plate having the properties of a quasi-isotropic graphite/epoxy laminate. Results showed that the contact angle as well as the peak stresses around the hole and their locations were strongly influenced by the ratio of bearing and bypass loads. For single contact, tension and compression bearing-bypass loading had opposite effects on the contact angle. For some compressive bearing-bypass loads, the hole tended to close on the fastener leading to dual contact. It was shown that dual contact reduces the stress concentration at the fastener and would, therefore, increase joint strength in compression. The results illustrate the general importance of accounting for bolt-hole clearance and contact to accurately compute local bolt-hole stresses for combined bearings and bypass loading.

Unusual dewetting of thin polymer films in liquid media containing a poor solvent and a nonsolvent.

PubMed

Xu, Lin; Sharma, Ashutosh; Joo, Sang Woo; Liu, Hui; Shi, Tongfei

2014-12-16

We investigate the control of pattern size and kinetics in spontaneous dewetting of thin polymer films (polystyrene) that are stable to thermal annealing by annealing in a poor solvent (acetone)/nonsolvent (ethanol or n-hexane) liquid mixture. Dewetting occurs by the formation and growth of circular holes that coalesce to form droplets. The influence of the nature and the volume fraction of the nonsolvents on the contact angle of polymer droplets, number density of holes, and the kinetics of holes formation and growth is studied. Addition of ethanol greatly increases the hole density and slows down the kinetics substantially, while affecting only a small change in wettability. n-Hexane addition shows an interesting nonmonotonic response in decreasing the hole density and contact angle in the volume fraction range of 0-0.3 but an opposite effect beyond that. Although the two nonsolvents chosen cannot by themselves induce dewetting, their relative affinity for the solid substrate vis-à-vis acetone can strongly influence the observed dewetting scenarios that are not understood by the existing theoretical considerations. n-Hexane, for example, has great affinity for silicon substrate. In addition to the changes in wettability, viscosity, and film interfacial tension engendered by the nonsolvents, the possibility of the formation of adsorbed liquid layers at the substrate-polymer interface, which can modify the interfacial friction and slippage, needs to be considered.

Measurement of contact angle in a clearance-fit pin-loaded hole

NASA Technical Reports Server (NTRS)

Prabhakaran, R.; Naik, R. A.

1986-01-01

A technique which measures load-contact variation in a clearance-fit, pin-loaded hole is presented in detail. A steel instrumented pin, which activates a make-or-break electrical circuit in the pin-hole contact region, was inserted into one aluminum and one polycarbonate specimen. The resulting load-contact variations are indicated schematically. The ability to accurately determine the arc of contact at any load was crucial to this measurement. It is noted that this simple experimental technique is applicable to both conducting and nonconducting materials.

Micromachined silicon electrostatic chuck

DOEpatents

Anderson, R.A.; Seager, C.H.

1996-12-10

An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

Implications for crustal accretion at fast spreading ridges from observations in Jurassic oceanic crust in the western Pacific

NASA Astrophysics Data System (ADS)

Pockalny, Robert A.; Larson, Roger L.

2003-01-01

Downhole logging data and basement stratigraphy interpretations are used to determine the spreading environment and crustal accretion history of the ocean basement cored at ODP Hole 801C located in the Jurassic Magnetic Quiet Zone of the western Pacific. High-resolution microresistivity data obtained with the Formation MicroScanner are used to measure the dip of the extrusive layers and indicate a 10°-30° increase in dip down the drill hole with lava flow contacts dipping back toward the original ridge axis. This structural pattern and the high proportion of massive flows relative to pillow units are consistent with prevailing crustal accretion models proposed for faster spreading ridges (e.g., >60 km/m.y., full-rate). A detailed analysis of the age data, basement lithology, related geochemistry, and structural attitudes suggest the shallowest 100 m of the drilled section (e.g., Sequences I-III) were emplaced just off the ridge (Sequence III) or significantly farther off-axis up to 5-15 m.y. later (Sequences I and II). The remainder of the drilled section (e.g., Sequences IV-VIII) has geochemical, lithological and physical trends that are assumed to be representative of crust created at faster spreading ridges. The pattern of dipping lava flow contacts from this deeper section of the drill hole suggests lava flows emanating from the ridge axis are limited to 1-2 km off-axis. Our results suggest ocean crust drilled at Hole 801C was created at faster spreading rates; however, caution should be used when incorporating Sequences I-III into geochemical reference sections for faster spreading ridges.

Effects of bolt-hole contact on bearing-bypass damage-onset strength

NASA Technical Reports Server (NTRS)

Crews, John H., Jr.; Naik, Rajiv A.

1991-01-01

A combined experimental and analytical study was conducted to investigate the effects of bolt-hole contact on the bearing bypass strength of a graphite-epoxy laminate. Tests were conducted on specimens consisting of 16-ply quasi-isotropic T300/5208 laminates with a centrally located hole. Bearing loads were applied through a clearance-fit steel bolt. Damage onset strength and damage mode were determined for each test case. A finite element procedure was used to calculate the bolt-hole stresses and bolt contact for each test case. A finite element procedure was used to calculate the bolt-hole stresses and bolt contact for each measured damage-onset strength. For the tension bearing-bypass cases tested, the bolt contact half-angle was approximately 60 degrees at damage onset. For compression, the contact angle was 20 degrees as the bypass load increased. A corresponding decrease in the bearing damage onset strength was attributed to the decrease in contact angle which made the bearing loads more severe. Hole boundary stresses were also computed by superimposing stresses for separate bearing and bypass loading. Stresses at the specimen net section were accurately approximated by the superposition procedure. However, the peak bearing stresses had large errors because the bolt contact angles were not represented correctly. For compression, peak bearing stress errors of nearly 50 percent were calculated.

Optical Metrology for Directed Self-assembly Patterning Using Mueller Matrix Spectroscopic Ellipsometry Based Scatterometry

NASA Astrophysics Data System (ADS)

Dixit, Dhairya J.

The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, lower cost per transistors, and higher transistor density. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require cutting-edge metrology tools for characterization. Directed self-assembly (DSA) patterning process can be used to fabricate nanoscale line-space patterns and contact holes via thermodynamically driven micro-phase separation of block copolymer (BCP) films with boundary constraints from guiding templates. Its main advantages are high pattern resolution (~10 nm), high throughput, no requirement of a high-resolution mask, and compatibility with standard fab-equipment and processes. Although research into DSA patterning has demonstrated a high potential as a nanoscale patterning process, there are critical challenges that must be overcome before transferring DSA into high volume manufacturing, including achievement of low defect density and high process stability. For this, advances in critical dimension (CD) and overlay measurement as well as rapid defect characterization are required. Both scatterometry and critical dimension-scanning electron microscopy (CD-SEM) are routinely used for inline dimensional metrology. CD-SEM inspection is limited, as it does not easily provide detailed line-shape information, whereas scatterometry has the capability of measuring important feature dimensions including: line-width, line-shape, sidewall-angle, and thickness of the patterned samples quickly and non-destructively. The present work describes the application of Mueller matrix spectroscopic ellipsometry (MMSE) based scatterometry to optically characterize DSA patterned line- space grating and contact hole structures fabricated with phase-separated polystyrene-b-polymethylmethacrylate (PS-b-PMMA) at various integration steps of BCP DSA based patterning process. This work focuses on understanding the efficacy of MMSE base scatterometry for characterizing complex DSA structures. For example, the use of symmetry-antisymmetry properties associated with Mueller matrix (MM) elements to understand the topography of the periodic nanostructures and measure defectivity. Simulations (the forward problem approach of scatterometry) are used to investigate MM elements' sensitivity to changes in DSA structure such as one vs. two contact hole patterns and predict sensitivity to dimensional changes. A regression-based approach is used to extract feature shape parameters of the DSA structures by fitting simulated optical spectra to experimental optical spectra. Detection of the DSA defects is a key to reducing defect density for eventual manufacturability and production use of DSA process. Simulations of optical models of structures containing defects are used to evaluate the sensitivity of MM elements to DSA defects. This study describes the application of MMSE to determine the DSA pattern defectivity via spectral comparisons based on optical anisotropy and depolarization. The use of depolarization and optical anisotropy for characterization of experimental MMSE data is a very recent development in scatterometry. In addition, reconstructed scatterometry models are used to calculate line edge roughness in 28 nm pitch Si fins fabricated using DSA patterning process.

Computational study of graphene-based vertical field effect transistor

NASA Astrophysics Data System (ADS)

Chen, Wenchao; Rinzler, Andrew; Guo, Jing

2013-03-01

Poisson and drift-diffusion equations are solved in a three-dimensional device structure to simulate graphene-based vertical field effect transistors (GVFETs). Operation mechanisms of the GVFET with and without punched holes in the graphene source contact are presented and compared. The graphene-channel Schottky barrier can be modulated by gate electric field due to graphene's low density of states. For the graphene contact with punched holes, the contact barrier thinning and lowering around punched hole edge allow orders of magnitude higher tunneling current compared to the region away from the punched hole edge, which is responsible for significant performance improvement as already verified by experiments. Small hole size is preferred due to less electrostatic screening from channel inversion layer, which gives large electric field around the punched hole edge, thus, leading to a thinner and lower barrier. Bilayer and trilayer graphenes as the source contact degrade the performance improvement because stronger electrostatic screening leads to smaller contact barrier lowering and thinning. High punched hole area percentage improves current performance by allowing more gate electric field to modulate the graphene-channel barrier. Low effective mass channel material gives better on-off current ratio.

Polymer blend lithography for metal films: large-area patterning with over 1 billion holes/inch(2).

PubMed

Huang, Cheng; Förste, Alexander; Walheim, Stefan; Schimmel, Thomas

2015-01-01

Polymer blend lithography (PBL) is a spin-coating-based technique that makes use of the purely lateral phase separation between two immiscible polymers to fabricate large area nanoscale patterns. In our earlier work (Huang et al. 2012), PBL was demonstrated for the fabrication of patterned self-assembled monolayers. Here, we report a new method based on the technique of polymer blend lithography that allows for the fabrication of metal island arrays or perforated metal films on the nanometer scale, the metal PBL. As the polymer blend system in this work, a mixture of polystyrene (PS) and poly(methyl methacrylate) (PMMA), dissolved in methyl ethyl ketone (MEK) is used. This system forms a purely lateral structure on the substrate at controlled humidity, which means that PS droplets are formed in a PMMA matrix, whereby both phases have direct contact both to the substrate and to the air interface. Therefore, a subsequent selective dissolution of either the PS or PMMA component leaves behind a nanostructured film which can be used as a lithographic mask. We use this lithographic mask for the fabrication of metal patterns by thermal evaporation of the metal, followed by a lift-off process. As a consequence, the resulting metal nanostructure is an exact replica of the pattern of the selectively removed polymer (either a perforated metal film or metal islands). The minimum diameter of these holes or metal islands demonstrated here is about 50 nm. Au, Pd, Cu, Cr and Al templates were fabricated in this work by metal PBL. The wavelength-selective optical transmission spectra due to the localized surface plasmonic effect of the holes in perforated Al films were investigated and compared to the respective hole diameter histograms.

N7 logic via patterning using templated DSA: implementation aspects

NASA Astrophysics Data System (ADS)

Bekaert, J.; Doise, J.; Gronheid, R.; Ryckaert, J.; Vandenberghe, G.; Fenger, G.; Her, Y. J.; Cao, Y.

2015-07-01

In recent years, major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). Insertion of DSA for IC fabrication is seriously considered for the 7 nm node. At this node the DSA technology could alleviate costs for multiple patterning and limit the number of masks that would be required per layer. At imec, multiple approaches for inserting DSA into the 7 nm node are considered. One of the most straightforward approaches for implementation would be for via patterning through templated DSA; a grapho-epitaxy flow using cylindrical phase BCP material resulting in contact hole multiplication within a litho-defined pre-pattern. To be implemented for 7 nm node via patterning, not only the appropriate process flow needs to be available, but also DSA-aware mask decomposition is required. In this paper, several aspects of the imec approach for implementing templated DSA will be discussed, including experimental demonstration of density effect mitigation, DSA hole pattern transfer and double DSA patterning, creation of a compact DSA model. Using an actual 7 nm node logic layout, we derive DSA-friendly design rules in a logical way from a lithographer's view point. A concrete assessment is provided on how DSA-friendly design could potentially reduce the number of Via masks for a place-and-routed N7 logic pattern.

Photothermal nanoblade for patterned cell membrane cutting

PubMed Central

Wu, Ting-Hsiang; Teslaa, Tara; Teitell, Michael A.; Chiou, Pei-Yu

2010-01-01

We report a photothermal nanoblade that utilizes a metallic nanostructure to harvest short laser pulse energy and convert it into a highly localized and specifically shaped explosive vapor bubble. Rapid bubble expansion and collapse punctures a lightly-contacting cell membrane via high-speed fluidic flows and induced transient shear stress. The membrane cutting pattern is controlled by the metallic nanostructure configuration, laser pulse polarization, and energy. Highly controllable, sub-micron sized circular hole pairs to half moon-like, or cat-door shaped, membrane cuts were realized in glutaraldehyde treated HeLa cells. PMID:21164656

Micromachined silicon electrostatic chuck

DOEpatents

Anderson, Robert A.; Seager, Carleton H.

1996-01-01

An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

GAS-FOVEAL CONTACT: A New Approach to Evaluating Positioning Regimens in Macular Hole Surgery.

PubMed

Alberti, Mark; la Cour, Morten

2018-05-01

To compare gas-foveal contact in face-down positioning (FDP) and nonsupine positioning (NSP), to analyze causes of gas-foveal separation and to determine how gas-foveal contact affects clinical outcome after idiopathic macular hole repair. Single center, randomized controlled study. Participants with an idiopathic macular hole were allocated to either FDP or NSP. Primary outcome was gas-foveal contact, calculated by analyzing positioning in relation to intraocular gas fill. Positioning was measured with an electronic device recording positioning for 72 hours postoperatively. Positioning data were available for 33/35 in the FDP group and 35/37 in the NSP group, thus results are based on 68 analyzed participants. Median gas-foveal contact was 99.82% (range 73.6-100.0) in the FDP group and 99.57% (range 85.3-100.0) in the NSP group (P = 0.22). In a statistical model, gas fill had a significant relation to gas-foveal contact (P < 0.0001), whereas whether the surgeon prescribed FDP or NSP was not significant (P = 0.20). Of clinical relevance, gas-foveal contact seemed to influence idiopathic macular hole closure (P = 0.02). We found no significant difference in gas-foveal contact between the positioning groups. The role of positioning after idiopathic macular hole surgery seems to be better characterized from examining both patient positioning and gas fill objectively. We propose gas-foveal contact as a new outcome for evaluating positioning regimens.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Segal-Peretz, Tamar; Zhou, Chun; Ren, Jiaxing

The three-dimensional assembly of poly (styrene-b-methyl methacrylate) (PS-b-PMMA) in chemoepitaxy and graphoepitaxy directed self-assembly (DSA) was investigated using scanning transmission electron microscopy (STEM) tomography. The tomographic characterization revealed hidden morphologies and defects at the BCP- chemical pattern interface in lamellar DSA, and probed the formation of cylinders at the bottom of cylindrical DSA for contact hole shrink. Lastly, future work will include control over 3D assembly in sub-10 nm processes.

Linear-Elastic 2D and 3D Finite Element Contact Analysis of a Hole Containing a Circular Insert in a Fatigue Test Coupon

DTIC Science & Technology

2015-07-01

circular hole in an aluminium plate fitted with a titanium fastener that were computed using two-dimensional finite element contact analysis. By...used to validate the contact stress distributions associated with a circular hole in an aluminium plate fitted with a titanium fastener that were...fatigue life and aircraft structural integrity management of RAAF airframes. An aluminium coupon has been previously designed in support of the

Application of CPL with Interference Mapping Lithography to generate random contact reticle designs for the 65-nm node

NASA Astrophysics Data System (ADS)

Van Den Broeke, Douglas J.; Laidig, Thomas L.; Chen, J. Fung; Wampler, Kurt E.; Hsu, Stephen D.; Shi, Xuelong; Socha, Robert J.; Dusa, Mircea V.; Corcoran, Noel P.

2004-08-01

Imaging contact and via layers continues to be one of the major challenges to be overcome for 65nm node lithography. Initial results of using ASML MaskTools' CPL Technology to print contact arrays through pitch have demonstrated the potential to further extend contact imaging to a k1 near 0.30. While there are advantages and disadvantages for any potential RET, the benefits of not having to solve the phase assignment problem (which can lead to unresolvable phase conflicts), of it being a single reticle - single exposure technique, and its application to multiple layers within a device (clear field and dark field) make CPL an attractive, cost effective solution to low k1 imaging. However, real semiconductor circuit designs consist of much more than regular arrays of contact holes and a method to define the CPL reticle design for a full chip circuit pattern is required in order for this technique to be feasible in volume manufacturing. Interference Mapping Lithography (IML) is a novel approach for defining optimum reticle patterns based on the imaging conditions that will be used when the wafer is exposed. Figure 1 shows an interference map for an isolated contact simulated using ASML /1150 settings of 0.75NA and 0.92/0.72/30deg Quasar illumination. This technique provides a model-based approach for placing all types features (scattering bars, anti-scattering bars, non-printing assist features, phase shifted and non-phase shifted) for the purpose of enhancing the resolution of the target pattern and it can be applied to any reticle type including binary (COG), attenuated phase shifting mask (attPSM), alternating aperture phase shifting mask (altPSM), and CPL. In this work, we investigate the application of IML to generate CPL reticle designs for random contact patterns that are typical for 65nm node logic devices. We examine the critical issues related to using CPL with Interference Mapping Lithography including controlling side lobe printing, contact patterns with odd symmetry, forbidden pitch regions, and reticle manufacturing constraints. Multiple methods for deriving the interference map used to define reticle patterns for various RET's will be discussed. CPL reticle designs that were created from implementing automated algorithms for contact pattern decomposition using MaskWeaver will also be presented.

Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

NASA Astrophysics Data System (ADS)

Tomasi, Andrea; Paviet-Salomon, Bertrand; Jeangros, Quentin; Haschke, Jan; Christmann, Gabriel; Barraud, Loris; Descoeudres, Antoine; Seif, Johannes Peter; Nicolay, Sylvain; Despeisse, Matthieu; de Wolf, Stefaan; Ballif, Christophe

2017-04-01

For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

Non-Contact EDDY Current Hole Eccentricity and Diameter Measurement

NASA Technical Reports Server (NTRS)

Chern, E. James

1998-01-01

Precision holes are among the most critical features of a mechanical component. Deviations from permissible tolerances can impede operation and result in unexpected failure. We have developed an automated non-contact eddy current hole diameter and eccentricity measuring system. The operating principle is based on the eddy current lift-off effect, which is the coil impedance as a function of the distance between the coil and the test object. An absolute eddy current probe rotates in the hole. The impedance of each angular position is acquired and input to the computer for integration and analysis. The eccentricity of the hole is the profile of the impedance as a function of angular position as compared to a straight line, an ideal hole. The diameter of the hole is the sum of the diameter of the probe and twice the distance-calibrated impedance. An eddy current image is generated by integrating angular scans for a plurality of depths between the top and bottom to display the eccentricity profile. This system can also detect and image defects in the hole. The method for non-contact eddy current hole diameter and eccentricity measurement has been granted a patent by the U.S. Patent and Trademark Office.

Plasmonic nanoparticle lithography: Fast resist-free laser technique for large-scale sub-50 nm hole array fabrication

NASA Astrophysics Data System (ADS)

Pan, Zhenying; Yu, Ye Feng; Valuckas, Vytautas; Yap, Sherry L. K.; Vienne, Guillaume G.; Kuznetsov, Arseniy I.

2018-05-01

Cheap large-scale fabrication of ordered nanostructures is important for multiple applications in photonics and biomedicine including optical filters, solar cells, plasmonic biosensors, and DNA sequencing. Existing methods are either expensive or have strict limitations on the feature size and fabrication complexity. Here, we present a laser-based technique, plasmonic nanoparticle lithography, which is capable of rapid fabrication of large-scale arrays of sub-50 nm holes on various substrates. It is based on near-field enhancement and melting induced under ordered arrays of plasmonic nanoparticles, which are brought into contact or in close proximity to a desired material and acting as optical near-field lenses. The nanoparticles are arranged in ordered patterns on a flexible substrate and can be attached and removed from the patterned sample surface. At optimized laser fluence, the nanohole patterning process does not create any observable changes to the nanoparticles and they have been applied multiple times as reusable near-field masks. This resist-free nanolithography technique provides a simple and cheap solution for large-scale nanofabrication.

SSME seal test program: Test results for hole-pattern damper seals

NASA Technical Reports Server (NTRS)

Childs, D. W.

1985-01-01

The results consisting of direct and transverse force coefficients are presented for thirteen, hole-pattern, damper-seal configurations. The designation damper seal refers to a seal which uses a deliberately roughened stator nd smooth rotor, to increase the net damping force developed by a seal. The designation hole-pattern refers to a stator roughness pattern which is developed by a pattern of round holes while are milled into the stator. All seals tested use the same smooth rotor and have the same constant minimum clearance. The seal tests examined the following major design options: (1) hole-area density, i.e., the proportion of stator surface area consumed by holes; and (2) hole depth, particularly the ratio of hole depth to minimum clearance. In addition, limited data were taken to examine the influence of in-line versus staggered hole patterns and flat-bottomed versus spherical-bottomed holes.

A study of the contact interaction between a plate with a hole and a washer in the presence of clearances and interferences

NASA Astrophysics Data System (ADS)

Grishin, V. I.

The contact interaction between a plate with a hole and a washer fitted into the hole with a clearance or an interference is investigated analytically using a finite element method implemented in a computer code. Data on changes in stress concentration with the distance from the filled hole to the plate edge are obtained for several materials, including D16-T, AK4-1, V95-T, OT4-1, 30KhGSA, and 30KhGSNA alloys.

Mechanically fastened composite laminates subjected to combined bearing-bypass and shear loading

NASA Technical Reports Server (NTRS)

Madenci, Erdogan

1993-01-01

Bolts and rivets provide a means of load transfer in the construction of aircraft. However, they give rise to stress concentrations and are often the source and location of static and fatigue failures. Furthermore, fastener holes are prone to cracks during take-off and landing. These cracks present the most common origin of structural failures in aircraft. Therefore, accurate determination of the contact stresses associated with such loaded holes in mechanically fastened joints is essential to reliable strength evaluation and failure prediction. As the laminate is subjected to loading, the contact region, whose extent is not known, develops between the fastener and the hole boundary through this contact region, which consists of slip and no-slip zones due to friction. The presence of the unknown contact stress distribution over the contact region between the pin and the composite laminate, material anisotropy, friction between the pin and the laminate, pin-hole clearance, combined bearing-bypass and shear loading, and finite geometry of the laminate result in a complex non-linear problem. In the case of bearing-bypass loading in compression, this non-linear problem is further complicated by the presence of dual contact regions. Previous research concerning the analysis of mechanical joints subjected to combined bearing-bypass and shear loading is non-existent. In the case of bearing-bypass loading only, except for the study conducted by Naik and Crews (1991), others employed the concept of superposition which is not valid for this non-linear problem. Naik and Crews applied a linear finite element analysis with conditions along the pin-hole contact region specified as displacement constraint equations. The major shortcoming of this method is that the variation of the contract region as a function of the applied load should be known a priori. Also, their analysis is limited to symmetric geometry and material systems, and frictionless boundary conditions. Since the contact stress distribution and the contact region are not known a priori, they did not directly impose the boundary conditions appropriate for modelling the contact and on-contact regions between the fastener and the hole. Furthermore, finite element analysis is not suitable for iterative design calculations for optimizing laminate construction in the presence of fasteners under complex loading conditions. In this study, the solution method developed by Madenci and Ileri (1992a,b) has been extended to determine the contact stresses in mechanical joints under combined bearing-bypass and shear loading, and bearing-bypass loading in compression resulting in dual contact regions.

Analysis of charge injection and contact resistance as a function of electrode surface treatment in ambipolar polymer transistors

NASA Astrophysics Data System (ADS)

Lee, Seon Jeng; Kim, Chaewon; Jung, Seok-Heon; Di Pietro, Riccardo; Lee, Jin-Kyun; Kim, Jiyoung; Kim, Miso; Lee, Mi Jung

2018-01-01

Ambipolar organic field-effect transistors (OFETs) have both of hole and electron enhancements in charge transport. The characteristics of conjugated diketopyrrolopyrrole ambipolar OFETs depend on the metal-contact surface treatment for charge injection. To investigate the charge-injection characteristics of ambipolar transistors, these devices are processed via various types of self-assembled monolayer treatments and annealing. We conclude that treatment by the self-assembled monolayer 1-decanethiol gives the best enhancement of electron charge injection at both 100 and 300 °C annealing temperature. In addition, the contact resistance is calculated by using two methods: One is the gated four-point probe (gFPP) method that gives the voltage drop between channels, and the other is the simultaneous contact resistance extraction method, which extracts the contact resistance from the general transfer curve. We confirm that the gFPP method and the simultaneous extraction method give similar contact resistance, which means that we can extract contact resistance from the general transfer curve without any special contact pattern. Based on these characteristics of ambipolar p- and n-type transistors, we fabricate inverter devices with only one active layer. [Figure not available: see fulltext.

Al-Si-Cu/TiN multilayer interconnection and Al-Ge reflow sputtering technologies for quarter-micron devices

NASA Astrophysics Data System (ADS)

Kikkawa, Takamaro; Kikuta, Kuniko

1993-05-01

Issues of interconnection technologies for quarter-micron devices are the reliability of metal lines with quarter-micron feature sizes and the formation of contact-hole-plugs with high aspect ratios. This paper describes a TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure as a quarter-micron interconnection technology and aluminum-germanium (Al-Ge) reflow sputtering as a contact-hole filling technology. The TiN/Al-Si-Cu/TiN/Al-Si-Cu/TiN/Ti multilayer conductor structure could suppress stress-induced voiding and improve the electromigration mean-time to failure. These improvements are attributed to the fact that the grain boundaries for the Al-Si-Cu film and the interfaces between the Al-Si-Cu and the TiN films are strengthened by the rigid intermetallic compound, TiAl3. The Al-Ge alloy reflow sputtering is a candidate for contact- and via-hole filling technologies in terms of reducing fabrication costs. The Al-Ge reflow sputtering achieved low temperature contact hole filling at 300 degree(s)C. Contact holes with a diameter of 0.25 micrometers and aspect ratio of 4 could be filled. This is attributed to the low eutectic temperature for Al-Ge (424 degree(s)C) and the effect of thin polysilicon underlayer on the enhancement of Al-Ge reflow.

SEM image quality enhancement technology for bright field mask

NASA Astrophysics Data System (ADS)

Fukuda, Naoki; Chihara, Yuta; Shida, Soichi; Ito, Keisuke

2013-09-01

Bright-field photomasks are used to print small contact holes via ArF immersion multiple patterning lithography. There are some technical difficulties when small floating dots are to be measured by SEM tools because of a false imaging shadow. However, a new scan technology of Multi Vision Metrology SEMTM E3630 presents a solution for this issue. The combination of new scan technology and the other MVM-SEM® functions can provide further extended applications with more accurate measurement results.

Three Dimensional Assembly in Directed Self-assembly of Block Copolymers

DOE PAGES

Segal-Peretz, Tamar; Zhou, Chun; Ren, Jiaxing; ...

2016-09-02

The three-dimensional assembly of poly (styrene-b-methyl methacrylate) (PS-b-PMMA) in chemoepitaxy and graphoepitaxy directed self-assembly (DSA) was investigated using scanning transmission electron microscopy (STEM) tomography. The tomographic characterization revealed hidden morphologies and defects at the BCP- chemical pattern interface in lamellar DSA, and probed the formation of cylinders at the bottom of cylindrical DSA for contact hole shrink. Lastly, future work will include control over 3D assembly in sub-10 nm processes.

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells.

PubMed

Lin, Wenjie; Wu, Weiliang; Liu, Zongtao; Qiu, Kaifu; Cai, Lun; Yao, Zhirong; Ai, Bin; Liang, Zongcun; Shen, Hui

2018-04-25

A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x , x < 3) with high stability and high performance is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm 2 ). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x /Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x . Compared with the commercialized p-type solar cell, the novel CrO x -based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

Investigation of pentacene growth on SiO2 gate insulator after photolithography for nitrogen-doped LaB6 bottom-contact electrode formation

NASA Astrophysics Data System (ADS)

Maeda, Yasutaka; Hiroki, Mizuha; Ohmi, Shun-ichiro

2018-04-01

Nitrogen-doped (N-doped) LaB6 is a candidate material for the bottom-contact electrode of n-type organic field-effect transistors (OFETs). However, the formation of a N-doped LaB6 electrode affects the surface morphology of a pentacene film. In this study, the effects of surface treatments and a N-doped LaB6 interfacial layer (IL) were investigated to improve the pentacene film quality after N-doped LaB6 electrode patterning with diluted HNO3, followed by resist stripping with acetone and methanol. It was found that the sputtering damage during N-doped LaB6 deposition on a SiO2 gate insulator degraded the crystallinity of pentacene. The H2SO4 and H2O2 (SPM) and diluted HF treatments removed the damaged layer on the SiO2 gate insulator surface. Furthermore, the N-doped LaB6 IL improved the crystallinity of pentacene and realized dendritic grain growth. Owing to these surface treatments, the hole mobility improved from 2.8 × 10-3 to 0.11 cm2/(V·s), and a steep subthreshold swing of 78 mV/dec for the OFET with top-contact configuration was realized in air even after bottom-contact electrode patterning.

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact.

PubMed

Noda, Kei; Wada, Yasuo; Toyabe, Toru

2015-10-28

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated. The increase in the drain current and the effective field-effect mobility was achieved by preparing hole-doped layers underneath the gold contact electrodes by coevaporation of pentacene and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), confirmed by using a thin-film organic transistor advanced simulator (TOTAS) incorporating Schottky contact with a thermionic field emission (TFE) model. Although the simulated electrical characteristics fit the experimental results well only in the linear regime of the transistor operation, the barrier height for hole injection and the gate-voltage-dependent hole mobility in the pentacene transistors were evaluated with the aid of the device simulation. This experimental data analysis with the simulation indicates that the highly-doped semiconducting layers prepared in the contact regions can enhance the charge carrier injection into the active semiconductor layer and concurrent trap filling in the transistor channel, caused by the mitigation of a Schottky energy barrier. This study suggests that both the contact-area-limited doping and the device simulation dealing with Schottky contact are indispensable in designing and developing high-performance organic thin-film transistors.

Woods Hole Science Aquarium: VOLUNTEERS

Science.gov Websites

Turtle Conservation Woods Hole Seals NEFSC Volunteering in the Woods Hole Science Aquarium Feeding a , although occasionally there may be a short waiting period. Anyone interested in volunteering may contact

Contacting graphene in a 200 mm wafer silicon technology environment

NASA Astrophysics Data System (ADS)

Lisker, Marco; Lukosius, Mindaugas; Kitzmann, Julia; Fraschke, Mirko; Wolansky, Dirk; Schulze, Sebastian; Lupina, Grzegorz; Mai, Andreas

2018-06-01

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this "stacked via" approach is Ni/TiN/W. We demonstrate that the second "stacked Via" is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm μm.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies

NASA Astrophysics Data System (ADS)

Kotadiya, Naresh B.; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-02-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

PubMed

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Muzzle imprint mark: a patterned injury which may be constituted of intradermal blood extravasations.

PubMed

Pircher, R; Bielefeld, L; Geisenberger, D; Große Perdekamp, M; Pollak, S; Thierauf-Emberger, A

2014-11-01

The muzzle imprint mark in contact shots is usually regarded as a patterned pressure abrasion depicting the barrel end as well as adjacent constructional components of the weapon. Due to parching after exposure to air, the affected skin assumes a brown color, especially along the contours of the impacting structures. Apart from this well-known type of epidermal damage, the imprint mark may also be formed by intradermal hemorrhages. In some cases, these intracutaneous bleedings manifest themselves as circular, curved or straight reddish lines mirroring the surface relief of the weapon's muzzle end. To estimate the frequency of skin hematomas in muzzle imprints, 35 consecutive contact shots to the head (temple, forehead, submental and occipital region) were evaluated. In 3 cases, the muzzle imprint mark exclusively consisted of intracutaneous bruises surrounding the bullet entrance hole. In 14 cases, the muzzle imprint was composed of both excoriations and intradermal hematomas. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

Investigation of atomic-layer-deposited TiO x as selective electron and hole contacts to crystalline silicon

DOE PAGES

Matsui, Takuya; Bivour, Martin; Ndione, Paul F.; ...

2017-09-21

Here, the applicability of atomic-layer-deposited titanium oxide (TiO x) thin films for the formation of carrier selective contacts to crystalline silicon (c-Si) is investigated. While relatively good electron selectivity was presented recently by other groups, we show that carrier selectivity can be engineered from electron to hole selective depending on the deposition conditions, post deposition annealing and the contact material covering the TiOx layer. For both the electron and hole contacts, an open-circuit voltage (Voc) of ~ >650 mV is obtained. The fact that the Voc is correlated with the (asymmetric) induced c-Si band bending suggests that carrier selectivity ismore » mainly governed by the effective work function and/or the fixed charge rather than by the asymmetric band offsets at the Si/TiOx interface, which provides important insight into the basic function of metal-oxide-based contact systems.« less

Multi-Resolution Imaging of Electron Dynamics in Nanostructure Interfaces

DTIC Science & Technology

2010-07-27

metallic carbon nanotubes from semiconducting ones. In pentacene transistors, we used scanning photocurrent microscopy to study spatially resolved...photoelectric response of pentacene thin films, which showed that point contacts formed near the hole injection points limit the overall performance of the...photothermal current microscopy, carbon nanotube transistor, pentacene transistor, contact resistance, hole injection 16. SECURITY CLASSIFICATION OF

Elasto-Plastic 3D Finite Element Contact Analysis of a Hole Containing a Circular Insert in a Fatigue Test Coupon

DTIC Science & Technology

2015-08-01

primarily concerned with the results of a three-dimensional elasto– plastic finite element contact analysis of a typical aluminium fatigue test coupon...determine the nonlinear three-dimensional elasto–plastic contact stress distributions around a circular hole in an aluminium plate that is fitted...Australian Air Force (RAAF) airframes. An aluminium -alloy fatigue test coupon (see Figure 1) has been designed and applied in support of the validation of

Pattern fidelity improvement of chemo-epitaxy DSA process for high-volume manufacturing

NASA Astrophysics Data System (ADS)

Muramatsu, Makoto; Nishi, Takanori; You, Gen; Saito, Yusuke; Ido, Yasuyuki; Ito, Kiyohito; Tobana, Toshikatsu; Hosoya, Masanori; Chen, Weichien; Nakamura, Satoru; Somervell, Mark; Kitano, Takahiro

2016-03-01

Directed self-assembly (DSA) is one of the candidates for next generation lithography. Over the past few years, cylindrical and lamellar structures dictated by the block co-polymer (BCP) composition have been investigated for use in patterning contact holes or lines, and, Tokyo Electron Limited (TEL is a registered trademark or a trademark of Tokyo Electron Limited in Japan and /or other countries.) has presented the evaluation results and the advantages of each-1-5. In this report, we will present the latest results regarding the defect reduction work on a model line/space system. Especially it is suggested that the defectivity of the neutral layer has a large impact on the defectivity of the DSA patterns. Also, LER/LWR reduction results will be presented with a focus on the improvements made during the etch transferring the DSA patterns into the underlayer.

A series connection architecture for large-area organic photovoltaic modules with a 7.5% module efficiency.

PubMed

Hong, Soonil; Kang, Hongkyu; Kim, Geunjin; Lee, Seongyu; Kim, Seok; Lee, Jong-Hoon; Lee, Jinho; Yi, Minjin; Kim, Junghwan; Back, Hyungcheol; Kim, Jae-Ryoung; Lee, Kwanghee

2016-01-05

The fabrication of organic photovoltaic modules via printing techniques has been the greatest challenge for their commercial manufacture. Current module architecture, which is based on a monolithic geometry consisting of serially interconnecting stripe-patterned subcells with finite widths, requires highly sophisticated patterning processes that significantly increase the complexity of printing production lines and cause serious reductions in module efficiency due to so-called aperture loss in series connection regions. Herein we demonstrate an innovative module structure that can simultaneously reduce both patterning processes and aperture loss. By using a charge recombination feature that occurs at contacts between electron- and hole-transport layers, we devise a series connection method that facilitates module fabrication without patterning the charge transport layers. With the successive deposition of component layers using slot-die and doctor-blade printing techniques, we achieve a high module efficiency reaching 7.5% with area of 4.15 cm(2).

Hierarchical micro- and nanofabrication by pattern-directed contact instabilities of thin viscoelastic films

NASA Astrophysics Data System (ADS)

Ghosh, Abir; Bandyopadhyay, Dipankar; Sarkar, Jayati; Sharma, Ashutosh

2017-12-01

A surface of a thin viscoelastic film forms spinodal patterns when brought in contact proximity of another surface due to the dominance of destabilizing intermolecular interaction over the stabilizing elastic and surface tension forces. In this study, we theoretically explore such contact instabilities of a thin viscoelastic film, wherein the patterns generated on the surface of the film is developed with the help of a contactor decorated with periodic physical, chemical, and physicochemical features on the surface. The nonlinear analysis shown here considers the movement of the patterned contactor during the adhesion and debonding processes, which is unlike most of the previous works where the contactor is considered to be stationary. The simulations reveal that the amplitude and periodicity of the patterns decorated on the contactor together with the contactor speed can be the key parameters to stimulate pattern formation on the film surface alongside causing changeover of the various modes of debonding of the surfaces. In particular, the ratio of the elastic to viscous compliances of the film is found to play a critical role to stimulate the changeover of the modes from catastrophic to peeling or coalescence. The study uncovers that a higher wettability contrast across the patterned contactor leads to the catastrophic collapse of the patterns decorated on the film surface when the contactor debonds at a moderate speed. In comparison, a moderately high wettability contrast alongside a faster withdrawal speed of the contactor results in the gradual peeling of columns during the debonding cycle. Remarkably, a higher withdrawal speed of the contactor from the film-proximity can increase the aspect ratio of the patterns fabricated on the film surface to about fourfold during the peeling mode of debonding. The results show the importance of the usage of patterned contactors, their controlled movement, and extent of elastic to viscous compliance ratio of the film for the improvement of the aspect ratio of the patterns developed using the elastic contact lithography of the thin viscoelastic films. The simulations also reveal the possibilities of the fabrication of biomimetic micro- or nanostructures such as columns, holes, cavities, or a combination of these patterns with large-area ordering employing the patterned contactors. A few example cases are shown to highlight the capacity of the proposed methodology for the fabrication of higher aspect ratio hierarchical micro- or nanostructures.

A fiber-optic technique for the measurement of contact angle in a clearance-fit pin-loaded hole

NASA Technical Reports Server (NTRS)

Prabhakaran, R.; Naik, R. A.

1987-01-01

A fiber-optic technique for measuring contact angle during pin loading of a specimen is proposed. The experimental design and procedures for loading a 49.8-mm-diameter instrumented pin into an quasi-isotropic graphite-epoxy specimen are described. The optical fiber was located just above the surface of the pin outer diameter in order to obtain accurate pin-hole contact-angle measurements at increasing load levels. The movement of the optical fiber through the no-contact, contact, and no-contact regions is discussed; the photodiode output decreased monotonically as the fiber moved from the no-contact to the contact region and then decreased monotonically as the fiber moved from the contact region to the no-contact region. Variations in the contact angle measurements are examined as function of applied load level. The measurements are compared to contact angle values obtained using a finite element analysis and an electrical technique; it is determined that the data correlate well.

Bolted Double-Lap Composite Joints Under Mechanical and Thermal Loading

NASA Technical Reports Server (NTRS)

Kradinov, V.; Barut, A.; Madenci, E.; Walker, Sandra P. (Technical Monitor)

2000-01-01

This study concerns the determination of the contact stresses and contact region around bolt holes and the bolt load distribution in single- and double-lap joints of composite laminates with arbitrarily located bolts under general mechanical loading conditions and uniform temperature change. The unknown contact stress distribution and contact region between the bolt and laminates and the interaction among the bolts require the bolt load distribution, as well as the contact stresses, to be as part of the solution. The present method is based on the complex potential theory and the variational formulation in order to account for bolt stiffness, bolt-hole clearance, and finite geometry of the composite laminates.

EUV via hole pattern fidelity enhancement through novel resist and post-litho plasma treatment

NASA Astrophysics Data System (ADS)

Yaegashi, Hidetami; Koike, Kyohei; Fonseca, Carlos; Yamashita, Fumiko; Kaushik, Kumar; Morikita, Shinya; Ito, Kiyohito; Yoshimura, Shota; Timoshkov, Vadim; Maslow, Mark; Jee, Tae Kwon; Reijnen, Liesbeth; Choi, Peter; Feng, Mu; Spence, Chris; Schoofs, Stijn

2018-03-01

Extreme UV(EUV) technology must be potential solution for sustainable scaling, and its adoption in high volume manufacturing(HVM) is getting realistic more and more. This technology has a wide capability to mitigate various technical problem in Multi-patterning (LELELE) for via hole patterning with 193-i. It induced local pattern fidelity error such like CDU, CER, Pattern placement error. Exactly, EUV must be desirable scaling-driving tool, however, specific technical issue, named RLS (Resolution-LER-Sensitivity) triangle, obvious remaining issue. In this work, we examined hole patterning sensitizing (Lower dose approach) utilizing hole patterning restoration technique named "CD-Healing" as post-Litho. treatment.

Measurement of residual stresses by the moire method

NASA Astrophysics Data System (ADS)

Sciammarella, C. A.; Albertazzi, A., Jr.

Three different applications of the moire method to the determination of residual stresses and strains are presented. The three applications take advantage of the property of ratings to record the changes of the surface they are printed on. One of the applications deals with thermal residual stresses, another with contact residual stress and the third one is a generalization of the blind hole technique. This last application is based on a computer assisted moire technique and on the generalization of the quasi-heterodyne techniques of fringe pattern analysis.

SSME seal test program: Test results for smooth, hole-pattern and helically-grooved stators

NASA Technical Reports Server (NTRS)

Childs, Dara W.

1987-01-01

All of the listed seals were tested in a liquid Halon test facility at high Reynolds numbers. In addition, a helically-grooved-stator seal was tested in an air seal facility. An analysis of the test results with comparisons to theoretical predictions supports the following conclusions: (1) For small seals, the Hirs' friction-factor model is more restricted than had been thought; (2) For smooth seals, predictions of stiffness and damping improve markedly as the radical clearance is reduced; (3) Friction-factor data for hole-pattern-seal stators frequently deviates from the Hirs model; (4) Predictions of stiffness and damping coefficients for hole-pattern-stator seals is generally reasonable; (5) Tests for the hole-pattern stators at reduced clearances show no clear optimum for hole-pattern seals with respect to either hole-area ratio or hole depth to minimum clearance ratios; (6) Tests of these hole-pattern stators show no significant advantage in net damping over smooth seals; (7) Tests of helically-grooved seal stators in Halon show reasonable agreement between theory and prediction for leakage and direct stiffness but poor agreement for the net damping coefficient.

Difference in EUV photoresist design towards reduction of LWR and LCDU

NASA Astrophysics Data System (ADS)

Jiang, Jing; De Simone, Danilo; Vandenberghe, Geert

2017-03-01

Pattern fidelity of EUV lithography is crucial for high resolution features, since small variation can affect device performance and even cause short or open circuit. For 1D features, dense lines and contact holes are the most common features for active, metal and contact layer, therefore line width roughness (LWR) and local critical dimension uniformity (LCDU) are important indexes to monitor. Both LWR and LCDU are greatly influenced by photon and acid shot noise. In addition, LWR is also affected by resist mechanical properties, like pattern collapse. In this study, we studied the influence of different chemically amplified resist components, such as polymer, PAG and quencher for both types and concentrations in order to understand the relative extent of influences of deprotection, acid diffusion, and base neutralization on pattern fidelity. However, conventional methods to approach higher resolution or low LWR/LCDU by sacrificing the dose are not sustainable. In order to continue to improve resist performance, a new component, metal salt sensitizer, is introduced into the resist system. This metal salt is able to achieve 30% dose reduction by increasing EUV absorption, maintaining LWR. We believe metal sensitizer might give us a new way to challenge the RLS trade-off.

Protecting the retinal pigment epithelium during macular hole surgery.

PubMed

Olson, Jeffrey L; On, Alexander V; Mandava, Naresh

2005-12-01

Herein a new surgical technique used during pars plana vitrectomy with internal limiting membrane peeling for macular hole surgery is reported. Perfluorocarbon liquid is used to tamponade the macular hole in order to prevent indocyanine green contact with the retinal pigment epithelium.

A novel double patterning approach for 30nm dense holes

NASA Astrophysics Data System (ADS)

Hsu, Dennis Shu-Hao; Wang, Walter; Hsieh, Wei-Hsien; Huang, Chun-Yen; Wu, Wen-Bin; Shih, Chiang-Lin; Shih, Steven

2011-04-01

Double Patterning Technology (DPT) was commonly accepted as the major workhorse beyond water immersion lithography for sub-38nm half-pitch line patterning before the EUV production. For dense hole patterning, classical DPT employs self-aligned spacer deposition and uses the intersection of horizontal and vertical lines to define the desired hole patterns. However, the increase in manufacturing cost and process complexity is tremendous. Several innovative approaches have been proposed and experimented to address the manufacturing and technical challenges. A novel process of double patterned pillars combined image reverse will be proposed for the realization of low cost dense holes in 30nm node DRAM. The nature of pillar formation lithography provides much better optical contrast compared to the counterpart hole patterning with similar CD requirements. By the utilization of a reliable freezing process, double patterned pillars can be readily implemented. A novel image reverse process at the last stage defines the hole patterns with high fidelity. In this paper, several freezing processes for the construction of the double patterned pillars were tested and compared, and 30nm double patterning pillars were demonstrated successfully. A variety of different image reverse processes will be investigated and discussed for their pros and cons. An economic approach with the optimized lithography performance will be proposed for the application of 30nm DRAM node.

150-nm DR contact holes die-to-database inspection

NASA Astrophysics Data System (ADS)

Kuo, Shen C.; Wu, Clare; Eran, Yair; Staud, Wolfgang; Hemar, Shirley; Lindman, Ofer

2000-07-01

Using a failure analysis-driven yield enhancements concept, based on an optimization of the mask manufacturing process and UV reticle inspection is studied and shown to improve the contact layer quality. This is achieved by relating various manufacturing processes to very fine tuned contact defect detection. In this way, selecting an optimized manufacturing process with fine-tuned inspection setup is achieved in a controlled manner. This paper presents a study, performed on a specially designed test reticle, which simulates production contact layers of design rule 250nm, 180nm and 150nm. This paper focuses on the use of advanced UV reticle inspection techniques as part of the process optimization cycle. Current inspection equipment uses traditional and insufficient methods of small contact-hole inspection and review.

Neutrophil migration through preexisting holes in the basal laminae of alveolar capillaries and epithelium during streptococcal pneumonia.

PubMed

Walker, D C; Behzad, A R; Chu, F

1995-11-01

The purpose of this study was to determine whether or not there are preexisting holes in the endothelial and epithelial basal laminae of alveolar walls and to determine the path taken by neutrophils as they migrate from the capillaries to the airspace of the alveoli during inflammation. Using transmission electron microscopy and serial thin sections of normal rabbit and mouse lung, we have demonstrated the presence of slit-like holes in the capillary basal laminae and round holes in the basal laminae of type 2 pneumocytes. The slits in the capillary basal laminae were observed at the intersection of the thick and thin walls where endothelium, pericytes, and fibroblasts make close contact. The round holes in the type 2 cell basal laminae were observed at sites of close contact with fibroblasts. Neutrophils were observed to migrate through these slits and holes during streptococcal pneumonia in rabbit lungs. We conclude that during inflammation in the lung, migrating neutrophils displace pericytes and fibroblasts from the slits in the capillary basal lamina and then crawl through these slits into the alveolar interstitium. We postulate that neutrophils find their way to type 2 pneumocytes by following interstitial fibroblasts. We believe that neutrophils displace fibroblasts from their close contacts with the type 2 cells and then crawl through the holes in the basal lamina into the basal lateral space of the type 2 cells. From there, neutrophils migrate into the alveolar airspace.

Board Saver for Use with Developmental FPGAs

NASA Technical Reports Server (NTRS)

Berkun, Andrew

2009-01-01

A device denoted a board saver has been developed as a means of reducing wear and tear of a printed-circuit board onto which an antifuse field programmable gate array (FPGA) is to be eventually soldered permanently after a number of design iterations. The need for the board saver or a similar device arises because (1) antifuse-FPGA design iterations are common and (2) repeated soldering and unsoldering of FPGAs on the printed-circuit board to accommodate design iterations can wear out the printed-circuit board. The board saver is basically a solderable/unsolderable FPGA receptacle that is installed temporarily on the printed-circuit board. The board saver is, more specifically, a smaller, square-ring-shaped, printed-circuit board (see figure) that contains half via holes one for each contact pad along its periphery. As initially fabricated, the board saver is a wider ring containing full via holes, but then it is milled along its outer edges, cutting the via holes in half and laterally exposing their interiors. The board saver is positioned in registration with the designated FPGA footprint and each via hole is soldered to the outer portion of the corresponding FPGA contact pad on the first-mentioned printed-circuit board. The via-hole/contact joints can be inspected visually and can be easily unsoldered later. The square hole in the middle of the board saver is sized to accommodate the FPGA, and the thickness of the board saver is the same as that of the FPGA. Hence, when a non-final FPGA is placed in the square hole, the combination of the non-final FPGA and the board saver occupy no more area and thickness than would a final FPGA soldered directly into its designated position on the first-mentioned circuit board. The contact leads of a non-final FPGA are not bent and are soldered, at the top of the board saver, to the corresponding via holes. A non-final FPGA can readily be unsoldered from the board saver and replaced by another one. Once the final FPGA design has been determined, the board saver can be unsoldered from the contact pads on the first-mentioned printed-circuit board and replaced by the final FPGA.

Complementary Barrier Infrared Detector (CBIRD) Contact Methods

NASA Technical Reports Server (NTRS)

Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

2013-01-01

The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

The Physical Effects of Contact and Close-Distance Gunfire on Sweatshirt Fleece.

PubMed

Kusluski, Michael A

2018-05-01

Powder stippling caused by the impact of propellant particles during close-distance gunfire has been previously described on skin and solid objects only. Additionally, radial tearing has been described as clear evidence of a contact-distance shot, requiring no further testing. Patterns of discrete perforating holes (referred to here as "stippling perforations") and other physical damage on sweatshirt fleece fabrics were prepared. Using the firearm and ammunition in this study, stippling perforations were observed to a maximum muzzle-to-target distance of 35 cm (10 inches). In addition, radial tearing and disintegration were present (and often more extensive) at greater than contact distance. The presence of stippling perforations could augment muzzle-to-target distance estimates generated using the Griess test, or allow distance estimates when the Griess test is not feasible. Unlike what has been previously reported, testing on the original evidence (or similar substitute) is warranted when physical damage is used to estimate shooting distance. © 2017 American Academy of Forensic Sciences.

Titanium dioxide/silicon hole-blocking selective contact to enable double-heterojunction crystalline silicon-based solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagamatsu, Ken A., E-mail: knagamat@princeton.edu; Man, Gabriel; Jhaveri, Janam

2015-03-23

In this work, we use an electron-selective titanium dioxide (TiO{sub 2}) heterojunction contact to silicon to block minority carrier holes in the silicon from recombining at the cathode contact of a silicon-based photovoltaic device. We present four pieces of evidence demonstrating the beneficial effect of adding the TiO{sub 2} hole-blocking layer: reduced dark current, increased open circuit voltage (V{sub OC}), increased quantum efficiency at longer wavelengths, and increased stored minority carrier charge under forward bias. The importance of a low rate of recombination of minority carriers at the Si/TiO{sub 2} interface for effective blocking of minority carriers is quantitatively described.more » The anode is made of a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) heterojunction to silicon which forms a hole selective contact, so that the entire device is made at a maximum temperature of 100 °C, with no doping gradients or junctions in the silicon. A low rate of recombination of minority carriers at the Si/TiO{sub 2} interface is crucial for effective blocking of minority carriers. Such a pair of complementary carrier-selective heterojunctions offers a path towards high-efficiency silicon solar cells using relatively simple and near-room temperature fabrication techniques.« less

Multiple-layer printed-wiring trace connector

NASA Technical Reports Server (NTRS)

Pizzeck, D. E.

1977-01-01

Nickel-plated spring-steel foil connector is hollow pin, with lengthwise slit, that is inserted into improperly plated-through holes. Edges of connector make positive contact with copper pads within hole.

GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Zheng, Chenju; Lv, Jiajiang; Gao, Yilin; Wang, Ruiqing; Liu, Sheng

2017-07-01

We demonstrate GaN-based double-layer electrode flip-chip light-emitting diodes (DLE-FCLED) with highly reflective indium-tin oxide (ITO)/distributed bragg reflector (DBR) p-type contact and via hole-based n-type contacts. Transparent thin ITO in combination with TiO2/SiO2 DBR is used for reflective p-type ohmic contact, resulting in a significant reduction in absorption of light by opaque metal electrodes. The finely distributed via hole-based n-type contacts are formed on the n-GaN layer by etching via holes through p-GaN and multiple quantum well (MQW) active layer, leading to reduced lateral current spreading length, and hence alleviated current crowding effect. The forward voltage of the DLE-FCLED is 0.31 V lower than that of the top-emitting LED at 90 mA. The light output power of DLE-FCLED is 15.7% and 80.8% higher than that of top-emitting LED at 90 mA and 300 mA, respectively. Compared to top- emitting LED, the external quantum efficiency (EQE) of DLE-FCLED is enhanced by 15.4% and 132% at 90 mA and 300 mA, respectively. The maximum light output power of the DLE-FCLED obtained at 195.6 A/cm2 is 1.33 times larger than that of the top-emitting LED obtained at 93 A/cm2.

Microfabrication of through holes in polydimethylsiloxane (PDMS) sheets using a laser plasma EUV source (Conference Presentation)

NASA Astrophysics Data System (ADS)

Makimura, Tetsuya; Urai, Hikari; Niino, Hiroyuki

2017-03-01

Polydimethylsiloxane (PDMS) is a material used for cell culture substrates / bio-chips and micro total analysis systems / lab-on-chips due to its flexibility, chemical / thermo-dynamic stability, bio-compatibility, transparency and moldability. For further development, it is inevitable to develop a technique to fabricate precise three dimensional structures on micrometer-scale at high aspect ratio. In the previous works, we reported a technique for high-quality micromachining of PDMS without chemical modification, by means of photo direct machining using laser plasma EUV sources. In the present work, we have investigated fabrication of through holes. The EUV radiations around 10 nm were generated by irradiation of Ta targets with Nd:YAG laser light (10 ns, 500 mJ/pulse). The generated EUV radiations were focused using an ellipsoidal mirror. It has a narrower incident angle than those in the previous works in order to form a EUV beam with higher directivity, so that higher aspect structures can be fabricated. The focused EUV beam was incident on PDMS sheets with a thickness of 15 micrometers, through holes in a contact mask placed on top of them. Using a contact mask with holes with a diameter of three micrometers, complete through holes with a diameter of two micrometers are fabricated in the PDMS sheet. Using a contact mask with two micrometer holes, however, ablation holes almost reaches to the back side of the PDMS sheet. The fabricated structures can be explained in terms of geometrical optics. Thus, we have developed a technique for micromachining of PDMS sheets at high aspect ratios.

Wetting dynamics of a collapsing fluid hole

NASA Astrophysics Data System (ADS)

Bostwick, J. B.; Dijksman, J. A.; Shearer, M.

2017-01-01

The collapse dynamics of an axisymmetric fluid cavity that wets the bottom of a rotating bucket bound by vertical sidewalls are studied. Lubrication theory is applied to the governing field equations for the thin film to yield an evolution equation that captures the effect of capillary, gravitational, and centrifugal forces on this converging flow. The focus is on the quasistatic spreading regime, whereby contact-line motion is governed by a constitutive law relating the contact-angle to the contact-line speed. Surface tension forces dominate the collapse dynamics for small holes with the collapse time appearing as a power law whose exponent compares favorably to experiments in the literature. Gravity accelerates the collapse process. Volume dependence is predicted and compared with experiment. Centrifugal forces slow the collapse process and lead to complex dynamics characterized by stalled spreading behavior that separates the large and small hole asymptotic regimes.

Carrier mobility enhancement of nano-crystalline semiconductor films: Incorporation of redox -relay species into the grain boundary interface

NASA Astrophysics Data System (ADS)

Desilva, L. A.; Bandara, T. M. W. J.; Hettiarachchi, B. H.; Kumara, G. R. A.; Perera, A. G. U.; Rajapaksa, R. M. G.; Tennakone, K.

Dye-sensitized and perovskite solar cells and other nanostructured heterojunction electronic devices require securing intimate electronic contact between nanostructured surfaces. Generally, the strategy is solution phase coating of a hole -collector over a nano-crystalline high-band gap n-type oxide semiconductor film painted with a thin layer of the light harvesting material. The nano-crystallites of the hole - collector fills the pores of the painted oxide surface. Most ills of these devices are associated with imperfect contact and high resistance of the hole conducting layer constituted of nano-crystallites. Denaturing of the delicate light harvesting material forbid sintering at elevated temperatures to reduce the grain boundary resistance. It is found that the interfacial and grain boundary resistance can be significantly reduced via incorporation of redox species into the interfaces to form ultra-thin layers. Suitable redox moieties, preferably bonded to the surface, act as electron transfer relays greatly reducing the film resistance offerring a promising method of enhancing the effective hole mobility of nano-crystalline hole-collectors and developing hole conductor paints for application in nanostructured devices.

A series connection architecture for large-area organic photovoltaic modules with a 7.5% module efficiency

PubMed Central

Hong, Soonil; Kang, Hongkyu; Kim, Geunjin; Lee, Seongyu; Kim, Seok; Lee, Jong-Hoon; Lee, Jinho; Yi, Minjin; Kim, Junghwan; Back, Hyungcheol; Kim, Jae-Ryoung; Lee, Kwanghee

2016-01-01

The fabrication of organic photovoltaic modules via printing techniques has been the greatest challenge for their commercial manufacture. Current module architecture, which is based on a monolithic geometry consisting of serially interconnecting stripe-patterned subcells with finite widths, requires highly sophisticated patterning processes that significantly increase the complexity of printing production lines and cause serious reductions in module efficiency due to so-called aperture loss in series connection regions. Herein we demonstrate an innovative module structure that can simultaneously reduce both patterning processes and aperture loss. By using a charge recombination feature that occurs at contacts between electron- and hole-transport layers, we devise a series connection method that facilitates module fabrication without patterning the charge transport layers. With the successive deposition of component layers using slot-die and doctor-blade printing techniques, we achieve a high module efficiency reaching 7.5% with area of 4.15 cm2. PMID:26728507

Interferometric Shack-Hartmann wavefront sensor with an array of four-hole apertures.

PubMed

López, David; Ríos, Susana

2010-04-20

A modified Hartmann test based on the interference produced by a four-hole mask can be used to measure an unknown wavefront. To scan the wavefront, the interference pattern is measured for different positions of the mask. The position of the central fringe of the diamond-shaped interference pattern gives a measure of the local wavefront slopes. Using a set of four-hole apertures located behind an array of lenslets in such a way that each four-hole window is inside one lenslet area, a set of four-hole interference patterns can be obtained in the back focal plane of the lenslets without having to scan the wavefront. The central fringe area of each interference pattern is narrower than the area of the central maximum of the diffraction pattern of the lenslet, increasing the accuracy in the estimate of the lobe position as compared with the Shack-Hartmann wavefront sensor.

Sputter-deposited WO x and MoO x for hole selective contacts

DOE PAGES

Bivour, Martin; Zähringer, Florian; Ndione, Paul F.; ...

2017-09-21

Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films depositedmore » by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.« less

Sputter-deposited WO x and MoO x for hole selective contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bivour, Martin; Zähringer, Florian; Ndione, Paul F.

Here, reactive sputter deposited tungsten and molybdenum oxide (WO x, MoO x) thin films are tested for their ability to form a hole selective contact for Si wafer based solar cells. A characterization approach based on analyzing the band bending induced in the c-Si absorber and the external and implied open-circuit voltage of test structures was used. It is shown that the oxygen partial pressure allows to tailor the selectivity to some extent and that a direct correlation between induced band bending and hole selectivity exists. Although the selectivity of the sputtered films is inferior to the reference films depositedmore » by thermal evaporation, these results demonstrate a good starting point for further optimizations of sputtered WO x and MoO x towards higher work functions to improve the hole selectivity.« less

CuSCN-Based Inverted Planar Perovskite Solar Cell with an Average PCE of 15.6%.

PubMed

Ye, Senyun; Sun, Weihai; Li, Yunlong; Yan, Weibo; Peng, Haitao; Bian, Zuqiang; Liu, Zhiwei; Huang, Chunhui

2015-06-10

Although inorganic hole-transport materials usually possess high chemical stability, hole mobility, and low cost, the efficiency of most of inorganic hole conductor-based perovskite solar cells is still much lower than that of the traditional organic hole conductor-based cells. Here, we have successfully fabricated high quality CH3NH3PbI3 films on top of a CuSCN layer by utilizing a one-step fast deposition-crystallization method, which have lower surface roughness and smaller interface contact resistance between the perovskite layer and the selective contacts in comparison with the films prepared by a conventional two-step sequential deposition process. The average efficiency of the CuSCN-based inverted planar CH3NH3PbI3 solar cells has been improved to 15.6% with a highest PCE of 16.6%, which is comparable to that of the traditional organic hole conductor-based cells, and may promote wider application of the inexpensive inorganic materials in perovskite solar cells.

Analysis of composite laminates with multiple fasteners by boundary collocation technique

NASA Astrophysics Data System (ADS)

Sergeev, Boris Anatolievich

Mechanical fasteners remain the primary means of load transfer between structural components made of composite laminates. As, in pursuit of increasing efficiency of the structure, the operational load continues to grow, the load carried by each fastener increases accordingly. This accelerates initiation of fatigue-related cracks near the fasteners holes and increases probability of failure. Therefore, the assessment of the stresses around the fastener holes and the stress intensity factors associated with edge cracks becomes critical for damage-tolerant design. Because of the presence of unknown contact stresses and the contact region between the fastener and the laminate, the analysis of a pin-loaded hole becomes considerably more complex than that of a traction-free hole. The accurate prediction of the contact stress distribution along the hole boundary is critical for determining the stress intensity factors and is essential for reliable strength evaluation and failure prediction. This study concerns the development of an analytical methodology, based on the boundary collocation technique, to determine the contact stresses and stress intensity factors required for strength and life prediction of bolted joints with many fasteners. It provides an analytical capability for determining the non-linear contact stresses in mechanically fastened composite laminates while capturing the effects of finite geometry, presence of edge cracks, interaction among fasteners, material anisotropy, fastener flexibility, fastener-hole clearance, friction between the pin and the laminate, and by-pass loading. Also, the proposed approach permits the determination of the fastener load distribution, which significantly influences the failure load of a multi-fastener joint. The well known phenomenon of the fastener tightening torque (clamping force) influence on the load distribution among the different fastener in a multi-fastener joints is taken into account by means of bi-linear representation of the elastic fastener deflection. Finally, two different failure criteria, maximum strains averaged over the characteristic distances and Tsai-Wu criterion, were used to predict the failure load and failure mode in two composite-aluminum joints. The comparison of the present predictions with the published experimental results reveals their agreement.

Encapsulating Elastically Stretchable Neural Interfaces: Yield, Resolution, and Recording/Stimulation of Neural Activity

PubMed Central

Morrison, Barclay; Goletiani, Cezar; Yu, Zhe; Wagner, Sigurd

2013-01-01

A high resolution elastically stretchable microelectrode array (SMEA) to interface with neural tissue is described. The SMEA consists of an elastomeric substrate, such as poly(dimethylsiloxane) (PDMS), elastically stretchable gold conductors, and an electrically insulating encapsulating layer in which contact holes are opened. We demonstrate the feasibility of producing contact holes with 40 µm × 40 µm openings, show why the adhesion of the encapsulation layer to the underlying silicone substrate is weakened during contact hole fabrication, and provide remedies. These improvements result in greatly increased fabrication yield and reproducibility. An SMEA with 28 microelectrodes was fabricated. The contact holes (100 µm × 100 µm) in the encapsulation layer are only ~10% the size of the previous generation, allowing a larger number of microelectrodes per unit area, thus affording the capability to interface with a smaller neural population per electrode. This new SMEA is used to record spontaneous and evoked activity in organotypic hippocampal tissue slices at 0% strain before stretching, at 5 % and 10 % equibiaxial strain, and again at 0% strain after relaxation. The noise of the recordings increases with increasing strain. The frequency of spontaneous neural activity also increases when the SMEA is stretched. Upon relaxation, the noise returns to pre-stretch levels, while the frequency of neural activity remains elevated. Stimulus-response curves at each strain level are measured. The SMEA shows excellent biocompatibility for at least two weeks. PMID:24093006

Screening charge localization at LiNbO{sub 3} surface with Schottky junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagata, Takahiro, E-mail: NAGATA.Takahiro@nims.go.jp; Chikyow, Toyohiro; Kitamura, Kenji

2016-04-25

Screening charge localization was demonstrated by using a Schottky contact with LiNbO{sub 3} (LN). A Cr/LN stack structure with a 2 μm diameter hole array penetrating the Cr layer localized the screening charge of LN in the hole, although the Al/LN stack structure exhibited no surface charge localization behavior. X-ray photoelectron spectroscopy revealed that Cr formed a Schottky contact with LN, which prevents the screening charge from escaping from the hole arrays. The screening charge localization was enhanced by inserting SiO{sub 2} between the metal and LN, which moved the position of the Fermi level to mid gap.

Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors

NASA Astrophysics Data System (ADS)

Maggioni, G.; Carturan, S.; Raniero, W.; Riccetto, S.; Sgarbossa, F.; Boldrini, V.; Milazzo, R.; Napoli, D. R.; Scarpa, D.; Andrighetto, A.; Napolitani, E.; De Salvador, D.

2018-03-01

A new method for the formation of hole-barrier contacts in high purity germanium (HPGe) is described, which consists in the sputter deposition of a Sb film on HPGe, followed by Sb diffusion produced through laser annealing of the Ge surface in the melting regime. This process gives rise to a very thin ( ≤ 100 nm) n-doped layer, as determined by SIMS measurement, while preserving the defect-free morphology of HPGe surface. A small prototype of gamma ray detector with a Sb laser-diffused contact was produced and characterized, showing low leakage currents and good spectroscopy data with different gamma ray sources.

Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns

NASA Astrophysics Data System (ADS)

Miyano, Yumiko; Narasaki, Ryota; Ichikawa, Takashi; Fukumoto, Atsushi; Aiso, Fumiki; Tamaoki, Naoki

2018-06-01

A multiscale simulation model is developed for optimizing the parameters of SiO2 plasma-enhanced atomic layer deposition of high-aspect-ratio hole patterns in three-dimensional (3D) stacked memory. This model takes into account the diffusion of a precursor in a reactor, that in holes, and the adsorption onto the wafer. It is found that the change in the aperture ratio of the holes on the wafer affects the concentration of the precursor near the top of the wafer surface, hence the deposition profile in the hole. The simulation results reproduced well the experimental results of the deposition thickness for the various hole aperture ratios. By this multiscale simulation, we can predict the deposition profile in a high-aspect-ratio hole pattern in 3D stacked memory. The atomic layer deposition parameters for conformal deposition such as precursor feeding time and partial pressure of precursor for wafers with various hole aperture ratios can be estimated.

Capaciflector-guided mechanisms

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor)

1996-01-01

A plurality of capaciflector proximity sensors, one or more of which may be overlaid on each other, and at least one shield are mounted on a device guided by a robot so as to see a designated surface, hole or raised portion of an object, for example, in three dimensions. Individual current-measuring voltage follower circuits interface the sensors and shield to a common AC signal source. As the device approaches the object, the sensors respond by a change in the currents therethrough. The currents are detected by the respective current-measuring voltage follower circuits with the outputs thereof being fed to a robot controller. The device is caused to move under robot control in a predetermined pattern over the object while directly referencing each other without any offsets, whereupon by a process of minimization of the sensed currents, the device is dithered or wiggled into position for a soft touchdown or contact without any prior contact with the object.

A newly designed hydroxyapatite ceramic burr-hole button

PubMed Central

Kashimura, Hiroshi; Ogasawara, Kuniaki; Kubo, Yoshitaka; Yoshida, Kenji; Sugawara, Atsushi; Ogawa, Akira

2010-01-01

Conventional burr-hole buttons sometimes do not fit the burr hole well due to the curvature of the surrounding bone. An irregular surface at the border between the button and the surrounding skull may appear unaesthetic. The major problem is the difference between the curvature radius of the skull and the burr-hole button in contact with the skull. To solve this problem, the authors designed a button made of hydroxyapatite ceramic to snugly fit the burr hole. The specifications of this device and its clinical application are described here. PMID:20448795

A newly designed hydroxyapatite ceramic burr-hole button.

PubMed

Kashimura, Hiroshi; Ogasawara, Kuniaki; Kubo, Yoshitaka; Yoshida, Kenji; Sugawara, Atsushi; Ogawa, Akira

2010-03-24

Conventional burr-hole buttons sometimes do not fit the burr hole well due to the curvature of the surrounding bone. An irregular surface at the border between the button and the surrounding skull may appear unaesthetic. The major problem is the difference between the curvature radius of the skull and the burr-hole button in contact with the skull. To solve this problem, the authors designed a button made of hydroxyapatite ceramic to snugly fit the burr hole. The specifications of this device and its clinical application are described here.

Single-Band and Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

2015-01-01

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Single-Band and Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

2017-01-01

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Nanohole and dot patterning processes on quartz substrate by R-θ electron beam lithography and nanoimprinting

NASA Astrophysics Data System (ADS)

Watanabe, Tsuyoshi; Taniguchi, Kazutake; Suzuki, Kouta; Iyama, Hiromasa; Kishimoto, Shuji; Sato, Takashi; Kobayashi, Hideo

2016-06-01

Fine hole and dot patterns with bit pitches (bp’s) of less than 40 nm were fabricated in the circular band area of a quartz substrate by R-θ electron beam lithography (EBL), reactive ion etching (RIE), and nanoimprinting. These patterning processes were studied to obtain minimum pitch sizes of hole and dot patterns without pattern collapse. The patterning on the circular band was aimed to apply these patterning processes to future high-density bit-patterned media (BPM) for hard disk drive (HDD) and permanent memory for the long life archiving of digital data. In hole patterning, a minimum-22-nm-bp and 8.2-nm-diameter pattern (1.3 Tbit/in.2) was obtained on a quartz substrate by optimizing the R-θ EBL and RIE processes. Dot patterns were replicated on another quartz substrate by nanoimprinting using a hole-patterned quartz substrate as a master mold followed by RIE. In dot patterning, a minimum-30-nm-bp and 18.5-nm-diameter pattern (0.7 Tbit/in.2) was obtained by introducing new descum conditions. It was observed that the minimum bp of successful patterning increased as the fabrication process proceeded, i.e., from 20 nm bp in the first EBL process to 30 nm bp in the last quartz dot patterning process. From the measured diameters of the patterns, it was revealed that pattern collapse was apt to occur when the value of average diameter plus 3 sigma of diameter was close to the bp. It was suggested that multiple fabrication processes caused the degradation of pattern quality; therefore, hole patterning is more suitable than dot patterning for future applications owing to the lower quality degradation by its simple fabrication process.

Evolution in the charge injection efficiency of evaporated Au contacts on a molecularly doped polymer

NASA Astrophysics Data System (ADS)

Ioannidis, Andronique; Facci, John S.; Abkowitz, Martin A.

1998-08-01

Injection efficiency from evaporated Au contacts on a molecularly doped polymer (MDP) system has been previously observed to evolve from blocking to ohmic over time. In the present article this contact forming phenomenon is analyzed in detail. The initially blocking nature of the Au contact is in contrast with that expected from the relative workfunctions of Au and of the polymer which suggest Au should inject holes efficiently. It is also in apparent contrast to a differently prepared interface of the same materials. The phenomenon is not unique to this interface, having been confirmed also for evaporated Ag and mechanically made liquid Hg contacts on the same MDP. The MDP is a disordered solid state solution of electroactive triarylamine hole transporting TPD molecules in a polycarbonate matrix. The trap-free hole-transport MDP provides a model system for the study of metal/polymer interfaces by enabling the use of a recently developed technique that gives a quantitative measure of contact injection efficiency. The technique combines field-dependent steady state injection current measurements at a contact under test with time-of-flight (TOF) mobility measurements made on the same sample. In the present case, MDP films were prepared with two top vapor-deposited contacts, one of Au (test contact) and one of Al (for TOF), and a bottom carbon-loaded polymer electrode which is known to be ohmic for hole injection. The samples were aged at various temperatures below the glass transition of the MDP (85 °C) and the evolution of current versus field and capacitance versus frequency behaviors are followed in detail over time and analyzed. Control measurements ensure that the evolution of the electrical properties is due to the Au/polymer interface behavior and not the bulk. All evaporated Au contacts eventually achieved ohmic injection. The evaporated Au/MDP interface was also investigated by transmission electron microscopy as a function of time and showed no evidence of Au interdiffusion in the MDP layer, remaining abrupt to within ˜10 Å over the course of the evolution in injection efficiency. Mechanisms related to Au penetration into the MDP are therefore unlikely. Rapid sequence data acquisition enabled the detection of two main processes in the injection evolution. The evolving injection efficiency is very well fit by two exponentials, enabling the characterization of time and temperature dependence of the evolution processes.

Self-Sealed Bionic Long Microchannels with Thin Walls and Designable Nanoholes Prepared by Line-Contact Capillary-Force Assembly.

PubMed

Lao, Zhao-Xin; Hu, Yan-Lei; Pan, Deng; Wang, Ren-Yan; Zhang, Chen-Chu; Ni, Jin-Cheng; Xu, Bing; Li, Jia-Wen; Wu, Dong; Chu, Jia-Ru

2017-06-01

Long microchannels with thin walls, small width, and nanoholes or irregular shaped microgaps, which are similar to capillaries or cancerous vessels, are urgently needed to simulate the physiological activities in human body. However, the fabrication of such channels remains challenging. Here, microchannels with designable holes are manufactured by combining laser printing with line-contact capillary-force assembly. Two microwalls are first printed by femtosecond laser direct-writing, and subsequently driven to collapse into a channel by the capillary force that arises in the evaporation of developer. The channel can remain stable in solvent due to the enhanced Van der Waals' force caused by the line-contact of microwalls. Microchannels with controllable nanoholes and almost arbitrary patterns can be fabricated without any bonding or multistep processes. As-prepared microchannels, with wall thicknesses less than 1 µm, widths less than 3 µm, lengths more than 1 mm, are comparable with human capillaries. In addition, the prepared channels also exhibit the ability to steer the flow of liquid without any external pump. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Single crystal silicon filaments fabricated in SOI: A potential IR source for a microfabricated photometric CO2 sensor

NASA Technical Reports Server (NTRS)

Tu, Juliana; Smith, Rosemary L.

1995-01-01

The objective of this project was to design, fabricate, and test single crystal silicon filaments as potential black body IR sources for a spectrophotometric CO2 sensing microsystem. The design and fabrication of the silicon-on-insulator (SOI) filaments are summarized and figures showing the composite layout of the filament die (which contains four filaments of different lengths -- 500 microns, 1 mm, 1.5 mm and 2 mm -- and equal widths of 15 microns) are presented. The composite includes four mask layers: (1) silicon - defines the filament dimensions and contact pads; (2) release pit - defines the oxide removed from under the filament and hence, the length of the released filament; (3) Pyrex pit - defines the pit etched in the Pyrex cap (not used); and (4) metal - defines a metal pattern on the contact pads or used as a contact hole etch. I/V characteristics testing of the fabricated SOI filaments is described along with the nitride-coating procedures carried out to prevent oxidation and resistance instability.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

When things go pear shaped: contour variations of contacts

NASA Astrophysics Data System (ADS)

Utzny, Clemens

2013-04-01

Traditional control of critical dimensions (CD) on photolithographic masks considers the CD average and a measure for the CD variation such as the CD range or the standard deviation. Also systematic CD deviations from the mean such as CD signatures are subject to the control. These measures are valid for mask quality verification as long as patterns across a mask exhibit only size variations and no shape variation. The issue of shape variations becomes especially important in the context of contact holes on EUV masks. For EUV masks the CD error budget is much smaller than for standard optical masks. This means that small deviations from the contact shape can impact EUV waver prints in the sense that contact shape deformations induce asymmetric bridging phenomena. In this paper we present a detailed study of contact shape variations based on regular product data. Two data sets are analyzed: 1) contacts of varying target size and 2) a regularly spaced field of contacts. Here, the methods of statistical shape analysis are used to analyze CD SEM generated contour data. We demonstrate that contacts on photolithographic masks do not only show size variations but exhibit also pronounced nontrivial shape variations. In our data sets we find pronounced shape variations which can be interpreted as asymmetrical shape squeezing and contact rounding. Thus we demonstrate the limitations of classic CD measures for describing the feature variations on masks. Furthermore we show how the methods of statistical shape analysis can be used for quantifying the contour variations thus paving the way to a new understanding of mask linearity and its specification.

Preoperative and postoperative features of macular holes on en face imaging and optical coherence tomography angiography.

PubMed

Shahlaee, Abtin; Rahimy, Ehsan; Hsu, Jason; Gupta, Omesh P; Ho, Allen C

2017-04-01

To characterize and quantify the pre- and postoperative foveal structural and functional patterns in full-thickness macular holes. Subjects presenting with a full-thickness macular hole that had pre- and postoperative imaging were included. En face optical coherence tomography (OCT) and OCT angiography (OCTA) was performed. Foveal avascular zone (FAZ) area, macular hole size, number and size of perifoveal cysts were measured. Five eyes from 5 patients were included in the study. The hole was closed in all eyes after the initial surgery. OCTA showed enlargement of the FAZ and delineation of the holes within the FAZ. Mean preoperative FAZ area was 0.41 ± 0.104 mm 2 . Visual acuity was improved and mean FAZ area was reduced to 0.27 ± 0.098 mm 2 postoperatively ( P  < 0.05) with resolution of the macular hole and adjacent cystic areas. En face images of the middle retina showed a range of preoperative cystic patterns surrounding the hole. Smaller holes showed fewer but larger cystic areas and larger holes had more numerous but smaller cystic areas. Quantitative evaluation of vascular and cystic changes following macular hole repair demonstrates the potential for recovery due to neuronal and vascular plasticity. Perifoveal microstructural patterns and their quantitative characteristics may serve as useful anatomic biomarkers for assessment of macular holes.

In-situ growth of calcite at Devils Hole, Nevada: Comparison of field and laboratory rates to a 500,000 year record of near-equilibrium calcite growth

USGS Publications Warehouse

Plummer, Niel; Busenberg, E.; Riggs, A.C.

2000-01-01

Calcite grew continuously for 500,000 years on the submerged walls of an open fault plane (Devils Hole) in southern Nevada, U.S.A. at rates of 0.3 to 1.3 mm/ka, but ceased growing approximately 60,000 years ago, even though the fault plane remained open and was continuously submerged. The maximum initial in-situ growth rate on pre-weighed crystals of Iceland spar placed in Devils Hole (calcite saturation index, SI, is 0.16 to 0.21 at 33.7??C) for growth periods of 0.75 to 4.5 years was 0.22 mm/ka. Calcite growth on seed crystals slowed or ceased following initial contact with Devils Hole groundwater. Growth rates measured in synthetic Ca-HCO3 solutions at 34??C, CO2 partial pressures of 0.101, 0.0156 (similar to Devils Hole groundwater) and 0.00102 atm, and SI values of 0.2 to 1.9 were nearly independent of P(CO)(2), decreased with decreasing saturation state, and extrapolated through the historical Devils Hole rate. The results show that calcite growth rate is highly sensitive to saturation state near equilibrium. A calcite crystal retrieved from Devils Hole, and used without further treatment of its surface, grew in synthetic Devils Hole groundwater when the saturation index was raised nearly 10-fold that of Devils Hole water, but the rate was only 1/4 that of fresh laboratory crystals that had not contacted Devils Hole water. Apparently, inhibiting processes that halted calcite growth in Devils Hole 60,000 years ago continue today.

In-situ growth of calcite at Devils Hole, Nevada--Comparison of field and laboratory rates to a 500,000 year record of near-equilibrium calcite growth

USGS Publications Warehouse

Plummer, Niel; Busenberg, Eurybiades; Riggs, Alan C.

2000-01-01

Calcite grew continuously for 500,000 years on the submerged walls of an open fault plane (Devils Hole) in southern Nevada, U.S.A. at rates of 0.3 to 1.3 mm/ka, but ceased growing approximately 60,000 years ago, even though the fault plane remained open and was continuously submerged. The maximum initial in-situ growth rate on pre-weighed crystals of Iceland spar placed in Devils Hole (calcite saturation index, SI, is 0.16 to 0.21 at 33.7 °C) for growth periods of 0.75 to 4.5 years was 0.22 mm/ka. Calcite growth on seed crystals slowed or ceased following initial contact with Devils Hole groundwater. Growth rates measured in synthetic Ca-HCO3 solutions at 34 °C, CO2 partial pressures of 0.101, 0.0156 (similar to Devils Hole groundwater) and 0.00102 atm, and SI values of 0.2 to 1.9 were nearly independent of PCO2, decreased with decreasing saturation state, and extrapolated through the historical Devils Hole rate. The results show that calcite growth rate is highly sensitive to saturation state near equilibrium. A calcite crystal retrieved from Devils Hole, and used without further treatment of its surface, grew in synthetic Devils Hole groundwater when the saturation index was raised nearly 10-fold that of Devils Hole water, but the rate was only 1/4 that of fresh laboratory crystals that had not contacted Devils Hole water. Apparently, inhibiting processes that halted calcite growth in Devils Hole 60,000 years ago continue today.

Contact stresses in pin-loaded orthotropic plates

NASA Technical Reports Server (NTRS)

Hyer, M. W.; Klang, E. C.

1984-01-01

The effects of pin elasticity, friction, and clearance on the stresses near the hole in a pin-loaded orthotropic plate are described. The problem is modeled as a contact elasticity problem using complex variable theory, the pin and the plate being two elastic bodies interacting through contact. This modeling is in contrast to previous works which assumed that the pin is rigid or that it exerts a known cosinusoidal radial traction on the hole boundary. Neither of these approaches explicitly involves a pin. A collocation procedure and iteration were used to obtain numerical results for a variety of plate and pin elastic properties and various levels of friction and clearance. Collocation was used to enforce the boundary and iteration was used to find the contact and no-slip regions on the boundary. Details of the numerical scheme are discussed.

Improved contact characteristics of laser-annealed p-GaN coated with Ni films

NASA Astrophysics Data System (ADS)

Zheng, Bo-Sheng; Ho, Chong-Long; Cheng, Kai-Yuan; Liao, Chien-Lan; Wu, Meng-Chyi; Hsieh, Kuang-Chien

2015-08-01

It is demonstrated that rapid thermal annealing or laser annealing of Mg-doped GaN (about 0.5 μm in thickness) in general helps activate acceptors and increase the average hole concentration by a factor of about 2 from low to mid of 1017/cm3 determined by the Hall measurements. Use of laser annealing of p-GaN coated with Ni and removal afterwards prior to depositing conventional Ni/Au ohmic-contact films, however, greatly improves the contact resistance from 10-2 to 1.6 × 10-4 Ω cm2. Other heat treatment schemes do not improve as much or make it even worse. The most reduction of contact resistance is attributed to the highest surface hole density in an uneven carrier profile achieved by laser annealing with a Ni cap layer.

Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer.

PubMed

Schumann, T; Gotschke, T; Limbach, F; Stoica, T; Calarco, R

2011-03-04

GaN nanowires (NWs) were grown selectively in holes of a patterned silicon oxide mask, by rf-plasma-assisted molecular beam epitaxy (PAMBE), without any metal catalyst. The oxide was deposited on a thin AlN buffer layer previously grown on a Si(111) substrate. Regular arrays of holes in the oxide layer were obtained using standard e-beam lithography. The selectivity of growth has been studied varying the substrate temperature, gallium beam equivalent pressure and patterning layout. Adjusting the growth parameters, GaN NWs can be selectively grown in the holes of the patterned oxide with complete suppression of the parasitic growth in between the holes. The occupation probability of a hole with a single or multiple NWs depends strongly on its diameter. The selectively grown GaN NWs have one common crystallographic orientation with respect to the Si(111) substrate via the AlN buffer layer, as proven by x-ray diffraction (XRD) measurements. Based on the experimental data, we present a schematic model of the GaN NW formation in which a GaN pedestal is initially grown in the hole.

Pattern uniformity control in integrated structures

NASA Astrophysics Data System (ADS)

Kobayashi, Shinji; Okada, Soichiro; Shimura, Satoru; Nafus, Kathleen; Fonseca, Carlos; Biesemans, Serge; Enomoto, Masashi

2017-03-01

In our previous paper dealing with multi-patterning, we proposed a new indicator to quantify the quality of final wafer pattern transfer, called interactive pattern fidelity error (IPFE). It detects patterning failures resulting from any source of variation in creating integrated patterns. IPFE is a function of overlay and edge placement error (EPE) of all layers comprising the final pattern (i.e. lower and upper layers). In this paper, we extend the use cases with Via in additional to the bridge case (Block on Spacer). We propose an IPFE budget and CD budget using simple geometric and statistical models with analysis of a variance (ANOVA). In addition, we validate the model with experimental data. From the experimental results, improvements in overlay, local-CDU (LCDU) of contact hole (CH) or pillar patterns (especially, stochastic pattern noise (SPN)) and pitch walking are all critical to meet budget requirements. We also provide a special note about the importance of the line length used in analyzing LWR. We find that IPFE and CD budget requirements are consistent to the table of the ITRS's technical requirement. Therefore the IPFE concept can be adopted for a variety of integrated structures comprising digital logic circuits. Finally, we suggest how to use IPFE for yield management and optimization requirements for each process.

Dopant-Free and Carrier-Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives.

PubMed

Gao, Pingqi; Yang, Zhenhai; He, Jian; Yu, Jing; Liu, Peipei; Zhu, Juye; Ge, Ziyi; Ye, Jichun

2018-03-01

By combining the most successful heterojunctions (HJ) with interdigitated back contacts, crystalline silicon (c-Si) solar cells (SCs) have recently demonstrated a record efficiency of 26.6%. However, such SCs still introduce optical/electrical losses and technological issues due to parasitic absorption/Auger recombination inherent to the doped films and the complex process of integrating discrete p + - and n + -HJ contacts. These issues have motivated the search for alternative new functional materials and simplified deposition technologies, whereby carrier-selective contacts (CSCs) can be formed directly with c-Si substrates, and thereafter form IBC cells, via a dopant-free method. Screening and modifying CSC materials in a wider context is beneficial for building dopant-free HJ contacts with better performance, shedding new light on the relatively mature Si photovoltaic field. In this review, a significant number of achievements in two representative dopant-free hole-selective CSCs, i.e . , poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate)/Si and transition metal oxides/Si, have been systemically presented and surveyed. The focus herein is on the latest advances in hole-selective materials modification, interfacial passivation, contact resistivity, light-trapping structure and device architecture design, etc. By analyzing the structure-property relationships of hole-selective materials and assessing their electrical transport properties, promising functional materials as well as important design concepts for such CSCs toward high-performance SCs have been highlighted.

Crosslinked Remote-Doped Hole-Extracting Contacts Enhance Stability under Accelerated Lifetime Testing in Perovskite Solar Cells.

PubMed

Xu, Jixian; Voznyy, Oleksandr; Comin, Riccardo; Gong, Xiwen; Walters, Grant; Liu, Min; Kanjanaboos, Pongsakorn; Lan, Xinzheng; Sargent, Edward H

2016-04-13

A crosslinked hole-extracting electrical contact is reported, which simultaneously improves the stability and lowers the hysteresis of perovskite solar cells. Polymerizable monomers and crosslinking processes are developed to obviate in situ degradation of the under lying perovskite. The crosslinked material is band-aligned with perovskite. The required free carrier density is induced by a high-work-function metal oxide layer atop the device, following a remote-doping strategy. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Floral Nectar Guide Patterns Discourage Nectar Robbing by Bumble Bees

PubMed Central

Leonard, Anne S.; Brent, Joshua; Papaj, Daniel R.; Dornhaus, Anna

2013-01-01

Floral displays are under selection to both attract pollinators and deter antagonists. Here we show that a common floral trait, a nectar guide pattern, alters the behavior of bees that can act opportunistically as both pollinators and as antagonists. Generally, bees access nectar via the floral limb, transporting pollen through contact with the plant’s reproductive structures; however bees sometimes extract nectar from a hole in the side of the flower that they or other floral visitors create. This behavior is called “nectar robbing” because bees may acquire the nectar without transporting pollen. We asked whether the presence of a symmetric floral nectar guide pattern on artificial flowers affected bumble bees’ (Bombus impatiens) propensity to rob or access nectar “legitimately.” We discovered that nectar guides made legitimate visits more efficient for bees than robbing, and increased the relative frequency of legitimate visits, compared to flowers lacking nectar guides. This study is the first to show that beyond speeding nectar discovery, a nectar guide pattern can influence bees’ flower handling in a way that could benefit the plant. PMID:23418475

Stoichiometric and Oxygen-Deficient VO2 as Versatile Hole Injection Electrode for Organic Semiconductors.

PubMed

Fu, Keke; Wang, Rongbin; Katase, Takayoshi; Ohta, Hiromichi; Koch, Norbert; Duhm, Steffen

2018-03-28

Using photoemission spectroscopy, we show that the surface electronic structure of VO 2 is determined by the temperature-dependent metal-insulator phase transition and the density of oxygen vacancies, which depends on the temperature and ultrahigh vacuum (UHV) conditions. The atomically clean and stoichiometric VO 2 surface is insulating at room temperature and features an ultrahigh work function of up to 6.7 eV. Heating in UHV just above the phase transition temperature induces the expected metallic phase, which goes in hand with the formation of oxygen defects (up to 6% in this study), but a high work function >6 eV is maintained. To demonstrate the suitability of VO 2 as hole injection contact for organic semiconductors, we investigated the energy-level alignment with the prototypical organic hole transport material N, N'-di(1-naphthyl)- N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB). Evidence for strong Fermi-level pinning and the associated energy-level bending in NPB is found, rendering an Ohmic contact for holes.

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

Probabilistic and Other Neural Nets in Multi-Hole Probe Calibration and Flow Angularity Pattern Recognition

NASA Technical Reports Server (NTRS)

Baskaran, Subbiah; Ramachandran, Narayanan; Noever, David

1998-01-01

The use of probabilistic (PNN) and multilayer feed forward (MLFNN) neural networks are investigated for calibration of multi-hole pressure probes and the prediction of associated flow angularity patterns in test flow fields. Both types of networks are studied in detail for their calibration and prediction characteristics. The current formalism can be applied to any multi-hole probe, however the test results for the most commonly used five-hole Cone and Prism probe types alone are reported in this article.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Dae-Kyu; Choi, Jong-Ho

2018-02-01

Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

On the properties of organic heterostructures prepared with nano-patterned metallic electrode

NASA Astrophysics Data System (ADS)

Breazu, C.; Socol, M.; Preda, N.; Matei, E.; Rasoga, O.; Girtan, M.; Mallet, R.; Stanculescu, F.; Stanculescu, A.

2018-06-01

This paper presents a comparative study between the properties of the heterostructures realized with single/multi layer organic (zinc phthalocyanine or/and fullerene) prepared on Si substrate between flat or patterned aluminum (Al) layer metallic electrode and multi layer ZnO/Au/ZnO transparent conductor electrode (TCE). The UV-Nanoimprint Lithography was used for the realization of a 2D array of nanostructures (holes/pillars) characterized by a periodicity of 1.1 μm and cylindrical shape: diameter = 400 nm and depth/height = 300 nm. The effect of the electrode patterning on the properties of the organic heterostructures was analyzed. For the samples with patterned Al electrode was remarked a slight red shift of the peaks in the reflection spectra determined by an increased interaction between the organic molecules in the delimited region of the patterned holes. The shape of the emission spectra at excitation with UV light showed a narrow intense peak around 500 nm associated with the intense resonance phenomena between the energy of the incident light and the surface plasmons in the patterned Al layer. The TCE followed the morphology of the organic film on which it was deposited. The significant differences between the morphology of the top layer in the heterostructures realized on flat and patterned Al are correlated with the total thickness of the successively deposited layers and with the particularities of the molecular arrangement, leading to the preservation or deleting of patterning. An injection contact behavior was evidence for most heterostructures built on flat and patterned Al. The slight increase in current at an applied bias <1 V in the heterostructure Si/Al/ZnPc/TCE is attributed to the larger interfacial area between the patterned Al electrode and ZnPc layer compared to the interface area between flat Al and ZnPc. A buffer layer of 1,4,5,8-naphthalen-tetracarboxylic dianhydride (NTCDA), sandwiched between the flat metallic electrode and organic film in the heterostructure Si/Al/C60/ZnPc/TCE has determined an increase in the current at low applied voltages.

Method of draining water through a solid waste site without leaching

DOEpatents

Treat, Russell L.; Gee, Glendon W.; Whyatt, Greg A.

1993-01-01

The present invention is a method of preventing water from leaching solid waste sites by preventing atmospheric precipitation from contacting waste as the water flows through a solid waste site. The method comprises placing at least one drain hole through the solid waste site. The drain hole is seated to prevent waste material from entering the drain hole, and the solid waste site cover material is layered and graded to direct water to flow toward the drain hole and to soil beneath the waste site.

Method of draining water through a solid waste site without leaching

DOEpatents

Treat, R.L.; Gee, G.W.; Whyatt, G.A.

1993-02-02

The present invention is a method of preventing water from leaching solid waste sites by preventing atmospheric precipitation from contacting waste as the water flows through a solid waste site. The method comprises placing at least one drain hole through the solid waste site. The drain hole is seated to prevent waste material from entering the drain hole, and the solid waste site cover material is layered and graded to direct water to flow toward the drain hole and to soil beneath the waste site.

Optimize of shrink process with X-Y CD bias on hole pattern

NASA Astrophysics Data System (ADS)

Koike, Kyohei; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Oyama, Kenichi; Yaegashi, Hidetami

2017-03-01

Gridded design rules[1] is major process in configuring logic circuit used 193-immersion lithography. In the scaling of grid patterning, we can make 10nm order line and space pattern by using multiple patterning techniques such as self-aligned multiple patterning (SAMP) and litho-etch- litho-etch (LELE)[2][3][4] . On the other hand, Line cut process has some error parameters such as pattern defect, placement error, roughness and X-Y CD bias with the decreasing scale. We tried to cure hole pattern roughness to use additional process such as Line smoothing[5] . Each smoothing process showed different effect. As the result, CDx shrink amount is smaller than CDy without one additional process. In this paper, we will report the pattern controllability comparison of EUV and 193-immersion. And we will discuss optimum method about CD bias on hole pattern.

Signatures of a staggered-flux phase in the t-J model with two holes on a 32-site lattice

NASA Astrophysics Data System (ADS)

Leung, P. W.

2000-09-01

We study the relevance of the staggered-flux phase in the t-J model using a system with two holes on a 32-site lattice with periodic boundary conditions. We find a staggered-flux pattern in the current-current correlation in the lowest energy d-wave state where there is mutual attraction between the holes. This staggered correlation decays faster with distance when the hole binding becomes stronger. This is in complete agreement with a recent study by Ivanov, Lee, and Wen [Phys. Rev. Lett. 84, 3958 (2000)] based on the SU(2) theory, and strongly suggests that the staggered-flux phase is a key ingredient in the t-J model. We further show that this staggered-flux pattern does not exist in a state where the holes repel each other. Correlations of the chirality operator S1.(S2×S3) show that the staggered pattern of the chirality is closely tied to the holes.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk; Hussain, Zakir; Mujahid, Mohammad

Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedancemore » spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.« less

The Highly Robust Electrical Interconnects and Ultrasensitive Biosensors Based on Embedded Carbon Nanotube Arrays

NASA Technical Reports Server (NTRS)

Li, Jun; Cassell, Alan; Koehne, Jessica; Chen, Hua; Ng, Hou Tee; Ye, Qi; Stevens, Ramsey; Han, Jie; Meyyappan, M.

2003-01-01

We report on our recent breakthroughs in two different applications using well-aligned carbon nanotube (CNT) arrays on Si chips, including (1) a novel processing solution for highly robust electrical interconnects in integrated circuit manufacturing, and (2) the development of ultrasensitive electrochemical DNA sensors. Both of them rely on the invention of a bottom-up fabrication scheme which includes six steps, including: (a) lithographic patterning, (b) depositing bottom conducting contacts, (c) depositing metal catalysts, (d) CNT growth by plasma enhanced chemical vapor deposition (PECVD), (e) dielectric gap-filling, and (f) chemical mechanical polishing (CMP). Such processes produce a stable planarized surface with only the open end of CNTs exposed, whch can be further processed or modified for different applications. By depositing patterned top contacts, the CNT can serve as vertical interconnects between the two conducting layers. This method is fundamentally different fiom current damascene processes and avoids problems associated with etching and filling of high aspect ratio holes at nanoscales. In addition, multiwalled CNTs (MWCNTs) are highly robust and can carry a current density of 10(exp 9) A/square centimeters without degradation. It has great potential to help extending the current Si technology. The embedded MWCNT array without the top contact layer can be also used as a nanoelectrode array in electrochemical biosensors. The cell time-constant and sensitivity can be dramatically improved. By functionalizing the tube ends with specific oligonucleotide probes, specific DNA targets can be detected with electrochemical methods down to subattomoles.

Escape of black holes from the brane.

PubMed

Flachi, Antonino; Tanaka, Takahiro

2005-10-14

TeV-scale gravity theories allow the possibility of producing small black holes at energies that soon will be explored at the CERN LHC or at the Auger observatory. One of the expected signatures is the detection of Hawking radiation that might eventually terminate if the black hole, once perturbed, leaves the brane. Here, we study how the "black hole plus brane" system evolves once the black hole is given an initial velocity that mimics, for instance, the recoil due to the emission of a graviton. The results of our dynamical analysis show that the brane bends around the black hole, suggesting that the black hole eventually escapes into the extra dimensions once two portions of the brane come in contact and reconnect. This gives a dynamical mechanism for the creation of baby branes.

78 FR 21079 - Airworthiness Directives; Bombardier, Inc. Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2013-04-09

... accomplished. The initial inspection may be either a detailed inspection or a bolt- hole eddy current (BHEC... inspection or a bolt-hole eddy current (BHEC) test for cracking of each nacelle lower longeron, in accordance...-39, Revision A, dated August 2, 2012, specify to contact the manufacturer for instructions to repair...

Spring loaded thermocouple module

DOEpatents

McKelvey, T.E.; Guarnieri, J.J.

1984-03-13

A thermocouple arrangement is provided for mounting in a blind hole of a specimen. The thermocouple arrangement includes a cup-like holder member, which receives an elongated thermal insulator, one end of which is seated at an end wall of the holder. A pair of thermocouple wires, threaded through passageways in the insulator, extend beyond the insulator member, terminating in free ends which are joined together in a spherical weld bead. A spring, held captive within the holder, applies a bias force to the weld bead, through the insulator member. The outside surface of the holder is threaded for engagement with the blind hole of the specimen. When the thermocouple is installed in the specimen, the spherical contact surface of the weld bead is held in contact with the end wall of the blind hole, with a predetermined bias force.

Spring loaded thermocouple module

DOEpatents

McKelvey, Thomas E.; Guarnieri, Joseph J.

1985-01-01

A thermocouple arrangement is provided for mounting in a blind hole of a specimen. The thermocouple arrangement includes a cup-like holder member, which receives an elongated thermal insulator, one end of which is seated at an end wall of the holder. A pair of thermocouple wires, threaded through passageways in the insulator, extend beyond the insulator member, terminating in free ends which are joined together in a spherical weld bead. A spring, held captive within the holder, applies a bias force to the weld bead, through the insulator member. The outside surface of the holder is threaded for engagement with the blind hole of the specimen. When the thermocouple is installed in the specimen, the spherical contact surface of the weld bead is held in contact with the end wall of the blind hole, with a predetermined bias force.

GdN nanoisland-based GaN tunnel junctions.

PubMed

Krishnamoorthy, Sriram; Kent, Thomas F; Yang, Jing; Park, Pil Sung; Myers, Roberto C; Rajan, Siddharth

2013-06-12

Tunnel junctions could have a great impact on gallium nitride and aluminum nitride-based devices such as light-emitting diodes and lasers by overcoming critical challenges related to hole injection and p-contacts. This paper demonstrates the use of GdN nanoislands to enhance interband tunneling and hole injection into GaN p-n junctions by several orders of magnitude, resulting in low tunnel junction specific resistivity (1.3 × 10(-3) Ω-cm(2)) compared to the previous results in wide band gap semiconductors. Tunnel injection of holes was confirmed by low-temperature operation of GaN p-n junction with a tunneling contact layer, and strong electroluminescence down to 20 K. The low tunnel junction resistance combined with low optical absorption loss in GdN is very promising for incorporation in GaN-based light emitters.

Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crofton, John; Bogart, Katherine Huderle Andersen

2005-06-01

Calculations of specific contact resistance as a function of doping and barrier height were performed for p-type GaN. These calculations took into account two valence bands, each with different effective masses, and show that at low doping, the heavy hole band accounts for most of the conduction, whereas at heavier doping, the light hole band dominates conduction. These calculations also indicate the barrier height for typical contacts to p-GaN is between 0.75 eV and 1 eV. Specific contact resistance measurements were made for oxidized Ni/Au, Pd, and oxidized Ni/Pd ohmic contact metal schemes to p-GaN. The Ni/Pd contact had themore » lowest specific contact resistance, 6 x 10{sup -4} {Omega} cm{sup 2}. Auger sputter depth profile analysis showed some Ni diffused away from the GaN surface to the contact surface with the bulk of the Pd located in between two areas of Ni. Both Ni and Pd interdiffused with the GaN at the semiconductor surface. The majority of the oxygen observed was with the Ni as NiO. Angle-resolved-x-ray photoelectron spectroscopy (AR-XPS) analyses showed the formation of predominantly NiO and PdO species, with higher Ni and Pd oxides at the contact surface.« less

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Mechanism of carrier injection in (Ni/Au)/p-AlxGa1-xN:Mg(0<=x<0.1) Ohmic contacts

NASA Astrophysics Data System (ADS)

Nikishin, S.; Chary, I.; Borisov, B.; Kuryatkov, V.; Kudryavtsev, Yu.; Asomoza, R.; Karpov, S. Yu.; Holtz, M.

2009-10-01

We report the mechanism of current injection in (Ni/Au)/p-AlxGa1-xN:Mg(0≤x<0.1) Ohmic contacts based on the temperature dependence of hole concentrations (p) and specific contact resistance (ρc). The injection mechanism is found to be thermionic emission in all cases. A model is developed to describe the temperature dependences of p and ρc for Mg concentrations from 1019 to 1020 cm-3. The model takes into account splitting in the valence band structure, hole activation energy, and Schottky barrier height. For GaN (AlGaN) these are found to be 132-140 (135-150) meV and 66-88 (84-93) meV, respectively.

Developing quartz wafer mold manufacturing process for patterned media

NASA Astrophysics Data System (ADS)

Chiba, Tsuyoshi; Fukuda, Masaharu; Ishikawa, Mikio; Itoh, Kimio; Kurihara, Masaaki; Hoga, Morihisa

2009-04-01

Recently, patterned media have gained attention as a possible candidate for use in the next generation of hard disk drives (HDD). Feature sizes on media are predicted to be 20-25 nm half pitch (hp) for discrete-track media in 2010. One method of fabricating such a fine pattern is by using a nanoimprint. The imprint mold for the patterned media is created from a 150-millimeter, rounded, quartz wafer. The purpose of the process introduced here was to construct a quartz wafer mold and to fabricate line and space (LS) patterns at 24 nmhp for DTM. Additionally, we attempted to achieve a dense hole (HOLE) pattern at 12.5 nmhp for BPM for use in 2012. The manufacturing process of molds for patterned media is almost the same as that for semiconductors, with the exception of the dry-etching process. A 150-millimeter quartz wafer was etched on a special tray made from carving a 6025 substrate, by using the photo-mask tool. We also optimized the quartz etching conditions. As a result, 24 nmhp LS and HOLE patterns were manufactured on the quartz wafer. In conclusion, the quartz wafer mold manufacturing process was established. It is suggested that the etching condition should be further optimized to achieve a higher resolution of HOLE patterns.

Improvements in resist performance towards EUV HVM

NASA Astrophysics Data System (ADS)

Yildirim, Oktay; Buitrago, Elizabeth; Hoefnagels, Rik; Meeuwissen, Marieke; Wuister, Sander; Rispens, Gijsbert; van Oosten, Anton; Derks, Paul; Finders, Jo; Vockenhuber, Michaela; Ekinci, Yasin

2017-03-01

Extreme ultraviolet (EUV) lithography with 13.5 nm wavelength is the main option for sub-10nm patterning in the semiconductor industry. We report improvements in resist performance towards EUV high volume manufacturing. A local CD uniformity (LCDU) model is introduced and validated with experimental contact hole (CH) data. Resist performance is analyzed in terms of ultimate printing resolution (R), line width roughness (LWR), sensitivity (S), exposure latitude (EL) and depth of focus (DOF). Resist performance of dense lines at 13 nm half-pitch and beyond is shown by chemical amplified resist (CAR) and non-CAR (Inpria YA Series) on NXE scanner. Resolution down to 10nm half pitch (hp) is shown by Inpria YA Series resist exposed on interference lithography at the Paul Sherrer Institute. Contact holes contrast and consequent LCDU improvement is achieved on a NXE:3400 scanner by decreasing the pupil fill ratio. State-of-the-art imaging meets 5nm node requirements for CHs. A dynamic gas lock (DGL) membrane is introduced between projection optics box (POB) and wafer stage. The DGL membrane will suppress the negative impact of resist outgassing on the projection optics by 100%, enabling a wider range of resist materials to be used. The validated LCDU model indicates that the imaging requirements of the 3nm node can be met with single exposure using a high-NA EUV scanner. The current status, trends, and potential roadblocks for EUV resists are discussed. Our results mark the progress and the improvement points in EUV resist materials to support EUV ecosystem.

Contact-metal dependent current injection in pentacene thin-film transistors

NASA Astrophysics Data System (ADS)

Wang, S. D.; Minari, T.; Miyadera, T.; Tsukagoshi, K.; Aoyagi, Y.

2007-11-01

Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

Optimization of the short-circuit current in an InP nanowire array solar cell through opto-electronic modeling.

PubMed

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2016-09-23

InP nanowire arrays with axial p-i-n junctions are promising devices for next-generation photovoltaics, with a demonstrated efficiency of 13.8%. However, the short-circuit current in such arrays does not match their absorption performance. Here, through combined optical and electrical modeling, we study how the absorption of photons and separation of the resulting photogenerated electron-hole pairs define and limit the short-circuit current in the nanowires. We identify how photogenerated minority carriers in the top n segment (i.e. holes) diffuse to the ohmic top contact where they recombine without contributing to the short-circuit current. In our modeling, such contact recombination can lead to a 60% drop in the short-circuit current. To hinder such hole diffusion, we include a gradient doping profile in the n segment to create a front surface barrier. This approach leads to a modest 5% increase in the short-circuit current, limited by Auger recombination with increased doping. A more efficient approach is to switch the n segment to a material with a higher band gap, like GaP. Then, a much smaller number of holes is photogenerated in the n segment, strongly limiting the amount that can diffuse and disappear into the top contact. For a 500 nm long top segment, the GaP approach leads to a 50% higher short-circuit current than with an InP top segment. Such a long top segment could facilitate the fabrication and contacting of nanowire array solar cells. Such design schemes for managing minority carriers could open the door to higher performance in single- and multi-junction nanowire-based solar cells.

76 FR 71472 - Airworthiness Directives; The Boeing Company Airplanes

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-18

... seal contacts the 12-o'clock engine strut, and for correct stiffness and vent holes, and doing... January 3, 2012. ADDRESSES: You may send comments by any of the following methods: Federal eRulemaking... the seal is attributed to insufficient seal stiffness and/or missing vent holes. If a damaged seal...

Hole patterns in ultrathin vanadium oxide layers on a Rh(111) surface during catalytic oxidation reactions with NO

NASA Astrophysics Data System (ADS)

von Boehn, Bernhard; Mehrwald, Sarah; Imbihl, Ronald

2018-04-01

Various oxidation reactions with NO as oxidant have been investigated on a partially VOx covered Rh(111) surface (θV = 0.3 MLE) in the 10-4 mbar range, using photoelectron emission microscopy (PEEM) as spatially resolving method. The PEEM studies are complemented by rate measurements and by low-energy electron diffraction. In catalytic methanol oxidation with NO and in the NH3 + NO reaction, we observe that starting from a homogeneous surface with increasing temperature first a stripe pattern develops, followed by a pattern in which macroscopic holes of nearly bare metal surface are surrounded by a VOx film. These hole patterns represent just the inverse of the VOx distribution patterns seen if O2 instead of NO is used as oxidant.

Coded aperture imaging with self-supporting uniformly redundant arrays

DOEpatents

Fenimore, Edward E.

1983-01-01

A self-supporting uniformly redundant array pattern for coded aperture imaging. The present invention utilizes holes which are an integer times smaller in each direction than holes in conventional URA patterns. A balance correlation function is generated where holes are represented by 1's, nonholes are represented by -1's, and supporting area is represented by 0's. The self-supporting array can be used for low energy applications where substrates would greatly reduce throughput. The balance correlation response function for the self-supporting array pattern provides an accurate representation of the source of nonfocusable radiation.

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.

PubMed

Yamamoto, Mahito; Nakaharai, Shu; Ueno, Keiji; Tsukagoshi, Kazuhito

2016-04-13

Transition metal oxides show much promise as effective p-type contacts and dopants in electronics based on transition metal dichalcogenides. Here we report that atomically thin films of under-stoichiometric tungsten oxides (WOx with x < 3) grown on tungsten diselenide (WSe2) can be used as both controlled charge transfer dopants and low-barrier contacts for p-type WSe2 transistors. Exposure of atomically thin WSe2 transistors to ozone (O3) at 100 °C results in self-limiting oxidation of the WSe2 surfaces to conducting WOx films. WOx-covered WSe2 is highly hole-doped due to surface electron transfer from the underlying WSe2 to the high electron affinity WOx. The dopant concentration can be reduced by suppressing the electron affinity of WOx by air exposure, but exposure to O3 at room temperature leads to the recovery of the electron affinity. Hence, surface transfer doping with WOx is virtually controllable. Transistors based on WSe2 covered with WOx show only p-type conductions with orders of magnitude better on-current, on/off current ratio, and carrier mobility than without WOx, suggesting that the surface WOx serves as a p-type contact with a low hole Schottky barrier. Our findings point to a simple and effective strategy for creating p-type devices based on two-dimensional transition metal dichalcogenides with controlled dopant concentrations.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

2017-05-01

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.

Electrical Contacts in Monolayer Arsenene Devices.

PubMed

Wang, Yangyang; Ye, Meng; Weng, Mouyi; Li, Jingzhen; Zhang, Xiuying; Zhang, Han; Guo, Ying; Pan, Yuanyuan; Xiao, Lin; Liu, Junku; Pan, Feng; Lu, Jing

2017-08-30

Arsenene, arsenic analogue of graphene, as an emerging member of two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S = 0.33), with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal-induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene-Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.

Quasi-random array imaging collimator

DOEpatents

Fenimore, E.E.

1980-08-20

A hexagonally shaped quasi-random no-two-holes-touching imaging collimator. The quasi-random array imaging collimator eliminates contamination from small angle off-axis rays by using a no-two-holes-touching pattern which simultaneously provides for a self-supporting array increasing throughput by elimination of a substrate. The present invention also provides maximum throughput using hexagonally shaped holes in a hexagonal lattice pattern for diffraction limited applications. Mosaicking is also disclosed for reducing fabrication effort.

Random array grid collimator

DOEpatents

Fenimore, E.E.

1980-08-22

A hexagonally shaped quasi-random no-two-holes touching grid collimator. The quasi-random array grid collimator eliminates contamination from small angle off-axis rays by using a no-two-holes-touching pattern which simultaneously provides for a self-supporting array increasng throughput by elimination of a substrate. The presentation invention also provides maximum throughput using hexagonally shaped holes in a hexagonal lattice pattern for diffraction limited applications. Mosaicking is also disclosed for reducing fabrication effort.

Friction Pull Plug and Material Configuration for Anti-Chatter Friction Pull Plug Weld

NASA Technical Reports Server (NTRS)

Littell, Justin Anderson (Inventor)

2016-01-01

A friction pull plug is provided for use in forming a plug weld in a hole in a material. The friction pull plug includes a shank and a series of three frustoconical sections. The relative sizes of the sections assure that a central one of the sections defines the initial contact point between the hole's sides. The angle defined by the central one of the sections reduces or eliminates chatter as the plug is pulled into the hole.

A patient specific finite element simulation of intramedullary nailing to predict the displacement of the distal locking hole.

PubMed

Mortazavi, Javad; Farahmand, Farzam; Behzadipour, Saeed; Yeganeh, Ali; Aghighi, Mohammad

2018-05-01

Distal locking is a challenging subtask of intramedullary nailing fracture fixation due to the nail deformation that makes the proximally mounted targeting systems ineffective. A patient specific finite element model was developed, based on the QCT data of a cadaveric femur, to predict the position of the distal hole of the nail postoperatively. The mechanical interactions of femur and nail (of two sizes) during nail insertion was simulated using ABAQUS in two steps of dynamic pushing and static equilibrium, for the intact and distally fractured bone. Experiments were also performed on the same specimen to validate the simulation results. A good agreement was found between the model predictions and the experimental observations. There was a three-point contact pattern between the nail and medullary canal, only on the proximal fragment of the fractured bone. The nail deflection was much larger in the sagittal plane and increased for the larger diameter nail, as well as for more distally fractured or intact femur. The altered position of the distal hole was predicted by the model with an acceptable error (mean: 0.95; max: 1.5 mm, in different tests) to be used as the compensatory information for fine tuning of proximally mounted targeting systems. Copyright © 2018 IPEM. Published by Elsevier Ltd. All rights reserved.

Analysis of a novel non-contacting waveguide backshort

NASA Technical Reports Server (NTRS)

Weller, T. M.; Katehi, L. P. B.; Mcgrath, William R.

1992-01-01

A new non-contacting waveguide backshort has been developed for millimeter and submillimeter wave frequencies. The design consists of a metal bar with rectangular or circular holes cut into it, which is covered with a dielectric (mylar) layer to form a snug fit with the walls of a waveguide. Hole geometries are adjusted to obtain a periodic variation of the guide impedance on the correct length scale, in order to produce efficient reflection of RF power. It is a mechanically rugged design which can be easily fabricated for frequencies from 1 to 1000 GHz and is thus a sound alternative to the miniaturization of conventional non-contacting shorts. To aid in high-frequency design, a rigorous full-wave analysis has been completed, which will allow variations of the size, number and spacing of the holes to be easily analyzed. This paper will review the backshort design and the method developed for theoretical characterization, followed by a comparison of the experimental and numerical results. Low frequency models operating from 4-6 GHz are shown to demonstrate return loss of greater than -0.2 dB over a 33 percent bandwidth. The theory is in good agreement with measured data.

Dense Pattern Optical Multipass Cell

NASA Technical Reports Server (NTRS)

Silver, Joel A. (Inventor)

2009-01-01

A multiple pass optical cell and method comprising providing a pair of opposed cylindrical mirrors having curved axes with substantially equal focal lengths, positioning an entrance hole for introducing light into the cell and an exit hole for extracting light from the cell, wherein the entrance hole and exit hole are coextensive or non-coextensive, introducing light into the cell through the entrance hole, and extracting light from the cell through the exit hole.

Dense pattern optical multipass cell

DOEpatents

Silver, Joel A [Santa Fe, NM

2009-01-13

A multiple pass optical cell and method comprising providing a pair of opposed cylindrical mirrors having curved axes with substantially equal focal lengths, positioning an entrance hole for introducing light into the cell and an exit hole for extracting light from the cell, wherein the entrance hole and exit hole are coextensive or non-coextensive, introducing light into the cell through the entrance hole, and extracting light from the cell through the exit hole.

Perforated-Layer Implementation Of Radio-Frequency Lenses

NASA Technical Reports Server (NTRS)

Dolgin, Benjamin P.

1996-01-01

Luneberg-type radio-frequency dielectric lenses made of stacked perforated circular dielectric sheets, according to proposal. Perforation pattern designed to achieve required spatial variation of permittivity. Consists of round holes distributed across face of each sheet in "Swiss-cheese" pattern, plus straight or curved slots that break up outer parts into petals in "daisy-wheel" pattern. Holes and slots made by numerically controlled machining.

Submicron patterned metal hole etching

DOEpatents

McCarthy, Anthony M.; Contolini, Robert J.; Liberman, Vladimir; Morse, Jeffrey

2000-01-01

A wet chemical process for etching submicron patterned holes in thin metal layers using electrochemical etching with the aid of a wetting agent. In this process, the processed wafer to be etched is immersed in a wetting agent, such as methanol, for a few seconds prior to inserting the processed wafer into an electrochemical etching setup, with the wafer maintained horizontal during transfer to maintain a film of methanol covering the patterned areas. The electrochemical etching setup includes a tube which seals the edges of the wafer preventing loss of the methanol. An electrolyte composed of 4:1 water: sulfuric is poured into the tube and the electrolyte replaces the wetting agent in the patterned holes. A working electrode is attached to a metal layer of the wafer, with reference and counter electrodes inserted in the electrolyte with all electrodes connected to a potentiostat. A single pulse on the counter electrode, such as a 100 ms pulse at +10.2 volts, is used to excite the electrochemical circuit and perform the etch. The process produces uniform etching of the patterned holes in the metal layers, such as chromium and molybdenum of the wafer without adversely effecting the patterned mask.

Atomic force microscopy for cellular level manipulation: imaging intracellular structures and DNA delivery through a membrane hole.

PubMed

Afrin, Rehana; Zohora, Umme Salma; Uehara, Hironori; Watanabe-Nakayama, Takahiro; Ikai, Atsushi

2009-01-01

The atomic force microscope (AFM) is a versatile tool for imaging, force measurement and manipulation of proteins, DNA, and living cells basically at the single molecular level. In the cellular level manipulation, extraction, and identification of mRNA's from defined loci of a cell, insertion of plasmid DNA and pulling of membrane proteins, for example, have been reported. In this study, AFM was used to create holes at defined loci on the cell membrane for the investigation of viability of the cells after hole creation, visualization of intracellular structure through the hole and for targeted gene delivery into living cells. To create large holes with an approximate diameter of 5-10 microm, a phospholipase A(2) coated bead was added to the AFM cantilever and the bead was allowed to touch the cell surface for approximately 5-10 min. The evidence of hole creation was obtained mainly from fluorescent image of Vybrant DiO labeled cell before and after the contact with the bead and the AFM imaging of the contact area. In parallel, cells with a hole were imaged by AFM to reveal intracellular structures such as filamentous structures presumably actin fibers and mitochondria which were identified with fluorescent labeling with rhodamine 123. Targeted gene delivery was also attempted by inserting an AFM probe that was coated with the Monster Green Fluorescent Protein phMGFP Vector for transfection of the cell. Following targeted transfection, the gene expression of green fluorescent protein (GFP) was observed and confirmed by the fluorescence microscope. Copyright (c) 2009 John Wiley & Sons, Ltd.

SSME Seal Test Program: Test results for sawtooth pattern damper seal

NASA Technical Reports Server (NTRS)

Childs, D. W.

1986-01-01

Direct and transverse force coefficients for 11, sawtooth-pattern, and damper-seal configurations were examined. The designation damper seal uses a deliberately roughened stator and smooth rotor to increase the net damping force developed by a seal. The designation sawtooth-pattern refers to a stator roughness pattern. The sawtooth pattern yields axial grooves in the stator which are interrupted by spacer elements which act as flow constrictions or dams. All seals use the same smooth rotor and have the same, constant, minimum clearance. The stators examined the consequences of changes in the following design parameters: (1) axial-groove depth; (2) number of teeth: (3) number of sawtooth sections; (4) number of spacer elements; (5) dam width; (6) axially aligned sawtooth sections versus axially-staggered sawtooth sections; and (7) groove geometry. It is found that none of the sawtooth-pattern seal performs as well as the best round-hole-pattern seal. Maximum damping configurations for the sawtooth and round-hole-pattern stators have comparable stiffness performance. Several of the sawtooth pattern stators outperformed the best round-hole pattern seal.

Miniature multicontact connectors

NASA Technical Reports Server (NTRS)

Holden, D. G.; Robelen, D. B.

1970-01-01

Connectors, which have 4 to 9 contacts, are engaged through a hole with a minimum diameter of 0.030 inch. They are constructed of concentric brass and nylon components assembled with a light, firm press-fit. They withstand several thousand mating cycles and each outer contact has a one ampere capacity.

Modeling of blob-hole correlations in GPI edge turbulence data

NASA Astrophysics Data System (ADS)

Myra, J. R.; Russell, D. A.; Zweben, S. J.

2017-10-01

Gas-puff imaging (GPI) observations made on NSTX have revealed two-point spatial correlation patterns in the plane perpendicular to the magnetic field. A common feature is the occurrence of dipole-like patterns with significant regions of negative correlation. In this work, we explore the possibility that these dipole patterns may be due to blob-hole pairs. Statistical methods are applied to determine the two-point spatial correlation that results from a model of blob-hole pair formation. It is shown that the model produces dipole correlation patterns that are qualitatively similar to the GPI data in many respects. Effects of the reference location (confined surfaces or scrape-off layer), a superimposed random background, hole velocity and lifetime, and background sheared flows are explored. The possibility of using the model to ascertain new information about edge turbulence is discussed. Work supported by the U.S. Department of Energy Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02-02ER54678.

Coded aperture imaging with self-supporting uniformly redundant arrays. [Patent application

DOEpatents

Fenimore, E.E.

1980-09-26

A self-supporting uniformly redundant array pattern for coded aperture imaging. The invention utilizes holes which are an integer times smaller in each direction than holes in conventional URA patterns. A balance correlation function is generated where holes are represented by 1's, nonholes are represented by -1's, and supporting area is represented by 0's. The self-supporting array can be used for low energy applications where substrates would greatly reduce throughput.

Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

NASA Astrophysics Data System (ADS)

Marchand, A.; El Hdiy, A.; Troyon, M.; Amiard, G.; Ronda, A.; Berbezier, I.

2012-04-01

Dynamics of hole storage in spherical Ge nanocrystals (NCs) formed by a two step dewetting/nucleation process on an oxide layer grown on an n-doped <001> silicon substrate is studied using a nano-electron beam induced current technique. Carrier generation is produced by an electron beam irradiation. The generated current is collected by an atomic force microscope—tip in contact mode at a fixed position away from the beam spot of about 0.5 µm. This distance represents the effective diffusion length of holes. The time constants of holes charging are determined and the effect of the NC size is underlined.

Inferring a District-Based Hierarchical Structure of Social Contacts from Census Data

PubMed Central

Yu, Zhiwen; Liu, Jiming; Zhu, Xianjun

2015-01-01

Researchers have recently paid attention to social contact patterns among individuals due to their useful applications in such areas as epidemic evaluation and control, public health decisions, chronic disease research and social network research. Although some studies have estimated social contact patterns from social networks and surveys, few have considered how to infer the hierarchical structure of social contacts directly from census data. In this paper, we focus on inferring an individual’s social contact patterns from detailed census data, and generate various types of social contact patterns such as hierarchical-district-structure-based, cross-district and age-district-based patterns. We evaluate newly generated contact patterns derived from detailed 2011 Hong Kong census data by incorporating them into a model and simulation of the 2009 Hong Kong H1N1 epidemic. We then compare the newly generated social contact patterns with the mixing patterns that are often used in the literature, and draw the following conclusions. First, the generation of social contact patterns based on a hierarchical district structure allows for simulations at different district levels. Second, the newly generated social contact patterns reflect individuals social contacts. Third, the newly generated social contact patterns improve the accuracy of the SEIR-based epidemic model. PMID:25679787

Integrating Residual Stress Analysis of Critical Fastener Holes into USAF Depot Maintenance

DTIC Science & Technology

2014-11-02

40 Table 15. Metrology of the initial reamer, initial hole diameters, and resulting CX for the class/type hole combinations for Pattern 1...70 Table 16. Metrology of the initial reamer, initial hole diameters, and resulting...step in the cold work process. These procedures produce a digital documentation of the hole, based on critical metrology , which can be linked with

Hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2016-04-12

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

Magnitude and Spatial Distribution of Impact Intensity Under the Foot Relates to Initial Foot Contact Pattern.

PubMed

Breine, Bastiaan; Malcolm, Philippe; Segers, Veerle; Gerlo, Joeri; Derie, Rud; Pataky, Todd; Frederick, Edward C; De Clercq, Dirk

2017-12-01

In running, foot contact patterns (rear-, mid-, or forefoot contact) influence impact intensity and initial ankle and foot kinematics. The aim of the study was to compare impact intensity and its spatial distribution under the foot between different foot contact patterns. Forty-nine subjects ran at 3.2 m·s -1 over a level runway while ground reaction forces (GRF) and shoe-surface pressures were recorded and foot contact pattern was determined. A 4-zone footmask (forefoot, midfoot, medial and lateral rearfoot) assessed the spatial distribution of the vertical GRF under the foot. We calculated peak vertical instantaneous loading rate of the GRF (VILR) per foot zone as the impact intensity measure. Midfoot contact patterns were shown to have the lowest, and atypical rearfoot contact patterns the highest impact intensities, respectively. The greatest local impact intensity was mainly situated under the rear- and midfoot for the typical rearfoot contact patterns, under the midfoot for the atypical rearfoot contact patterns, and under the mid- and forefoot for the midfoot contact patterns. These findings indicate that different foot contact patterns could benefit from cushioning in different shoe zones.

Influence of Thickness and Contact Surface Geometry of Condylar Stem of TMJ Implant on Its Stability

NASA Astrophysics Data System (ADS)

Arabshahi, Zohreh; Kashani, Jamal; Kadir, Mohammed Rafiq Abdul; Azari, Abbas

The aim of this study is to examine the effect thickness and contact surface geometry of condylar stem of TMJ implant on its stability in total reconstruction system and evaluate the micro strain resulted in bone at fixation screw holes in jaw bone embedded with eight different designs of temporomandibular joint implants. A three dimensional model of a lower mandible of an adult were developed from a Computed Tomography scan images. Eight different TMJ implant designs and fixation screws were modeled. Three dimensional finite element models of eight implanted mandibles were analyzed. The forces assigned to the masticatory muscles for incisal clenching were applied consisting of nine important muscular loads. In chosen loading condition, The results indicated that the anatomical curvature contact surface design of TMJ implant can moderately improve the stability and the strain resulted in fixation screw holes in thinner TMJ implant was diminished in comparison with other thicknesses.

Characterization of plasmonic hole arrays as transparent electrical contacts for organic photovoltaics using high-brightness Fourier transform methods

DOE PAGES

Camino, Fernando E.; Nam, Chang-Yong; Pang, Yutong T.; ...

2014-05-15

Here we present a methodology for probing light-matter interactions in prototype photovoltaic devices consisting of an organic semiconductor active layer with a semitransparent metal electrical contact exhibiting surface plasmon-based enhanced optical transmission. We achieve high-spectral irradiance in a spot size of less than 100 μm using a high-brightness laser-driven light source and appropriate coupling optics. Spatially resolved Fourier transform photocurrent spectroscopy in the visible and near-infrared spectral regions allows us to measure external quantum efficiency with high sensitivity in small-area devices (<1 mm 2). Lastly, this allows for rapid fabrication of variable-pitch sub-wavelength hole arrays in metal films for usemore » as transparent electrical contacts, and evaluation of the evanescent and propagating mode coupling to resonances in the active layer.« less

EUV local CDU healing performance and modeling capability towards 5nm node

NASA Astrophysics Data System (ADS)

Jee, Tae Kwon; Timoshkov, Vadim; Choi, Peter; Rio, David; Tsai, Yu-Cheng; Yaegashi, Hidetami; Koike, Kyohei; Fonseca, Carlos; Schoofs, Stijn

2017-10-01

Both local variability and optical proximity correction (OPC) errors are big contributors to the edge placement error (EPE) budget which is closely related to the device yield. The post-litho contact hole healing will be demonstrated to meet after-etch local variability specifications using a low dose, 30mJ/cm2 dose-to-size, positive tone developed (PTD) resist with relevant throughput in high volume manufacturing (HVM). The total local variability of the node 5nm (N5) contact holes will be characterized in terms of local CD uniformity (LCDU), local placement error (LPE), and contact edge roughness (CER) using a statistical methodology. The CD healing process has complex etch proximity effects, so the OPC prediction accuracy is challenging to meet EPE requirements for the N5. Thus, the prediction accuracy of an after-etch model will be investigated and discussed using ASML Tachyon OPC model.

Ionization chamber dosimeter

DOEpatents

Renner, Tim R.; Nyman, Mark A.; Stradtner, Ronald

1991-01-01

A method for fabricating an ion chamber dosimeter collecting array of the type utilizing plural discrete elements formed on a uniform collecting surface which includes forming a thin insulating layer over an aperture in a frame having surfaces, forming a predetermined pattern of through holes in the layer, plating both surfaces of the layer and simultaneously tilting and rotating the frame for uniform plate-through of the holes between surfaces. Aligned masking and patterned etching of the surfaces provides interconnects between the through holes and copper leads provided to external circuitry.

Homogenisation of the strain distribution in stretch formed parts to improve part properties

NASA Astrophysics Data System (ADS)

Schmitz, Roman; Winkelmann, Mike; Bailly, David; Hirt, Gerhard

2018-05-01

Inhomogeneous strain and sheet thickness distributions can be observed in complex sheet metal parts manufactured by stretch forming. In literature, this problem is solved by flexible clampings adapted to the part geometry. In this paper, an approach, which does not rely on extensive tooling, is presented. The strain distribution in the sheet is influenced by means of hole patterns. Holes are introduced into the sheet area between clamping and part next to areas where high strains are expected. When deforming the sheet, high strains are shifted out of the part area. In a local area around the holes, high strains concentrate perpendicular to the drawing direction. Thus, high strains in the part area are reduced and the strain distribution is homogenised. To verify this approach, an FE-model of a stretch forming process of a conical part is implemented in LS-Dyna. The model is validated by corresponding experiments. In the first step, the positioning of the holes is applied manually based on the numerically determined strain distribution and experience. In order to automate the positioning of the holes, an optimisation method is applied in a second step. The presented approach implemented in LS-OPT uses the response surface method to identify the positioning and radius of the holes homogenising the strain in a defined area of the sheet. Due to nonlinear increase of computational complexity with increasing number of holes, the maximum number of holes is set to three. With both, the manual and the automated method, hole patterns were found which allow for a relative reduction of maximum strains and for a homogenisation of the strain distribution. Comparing the manual and automated positioning of holes, the pattern determined by automated optimisation shows better results in terms of homogenising the strain distribution.

Schistosoma mansoni miracidial behavior: an assay system for chemostimulation.

PubMed

Sponholtz, G M; Short, R B

1975-04-01

A new system for evaluating the responses of miracidia to chemostimulants is described. The apparatus consists of a translucent plastic block with a center well and a hole in the edge leading to the well. One end of a glass tube, covered with a dialysis membrane, was inserted into the hole. Experimental solutions to be tested were put into the tube and Schistosoma mansoni miracidial behavior was observed in the well on the other side of the permeable membrane. Miracidia were released near the membrane; those which contacted the membrane were scored as to whether they returned (contact with return) or did not return (contact without return) before leaving the field of view. Materials eliciting significantly more contact with return responses than did controls were considered to be stimulatory. In this assay system, snail (Biomphalaria glabrata) conditioned water elicited 75% contact with return as compared to 8% for well water control (P less than 0.05). Tracings from motion pictures showed swimming behavior of miracidia toward snail-conditioned water to be different from behavior toward well water controls. This system permits generation of dilution response curves for chemicals and provides generally quantitative results.

Alignment Tool For Inertia Welding

NASA Technical Reports Server (NTRS)

Snyder, Gary L.

1991-01-01

Compact, easy-to-use tool aligns drive bar of inertia welder over hole in stub. Ensures drive bar concentric to hole within 0.002 in. (0.051 mm.). Holds two batteries and light bulb. Electrical circuit completed, providing current to bulb when pin in contact with post. When pin centered in post hole, it does not touch post, and lamp turns off. Built for use in making repair welds on liquid-oxygen-injector posts in Space Shuttle main engine. Version having suitably modified dimensions used to facilitate alignment in other forests of post.

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

PubMed

Hsu, Chao-Wei; Chen, Yung-Feng; Su, Yan-Kuin

2012-12-14

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full width at half maximum measurement from x-ray diffraction and photoluminescence spectra of GaAs on a planar Si(001) substrate, those of GaAs on the 55 nm round-hole patterned Si substrate are reduced by 39.6 and 31.4%, respectively. The improvement in material quality is verified by transmission electron microscopy, field-emission scanning electron microscopy, Hall measurements, Raman spectroscopy, photoluminescence, and x-ray diffraction studies.

Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Youxi; Suchalkin, Sergey; Kipshidze, Gela

2015-04-28

The effect of hole transport on the performance of infrared light emitting diodes (LED) was investigated. The active area of the LEDs comprised two type-II superlattices with different periods and widths connected in series. Electroluminescence spectra of the devices with different positions of long wave and mid wave superlattice sections were mostly contributed by the superlattice closest to the p-contact. The experimental results indicate that due to suppressed vertical hole transport, the recombination of electrically injected electrons and holes in a type II superlattice LED active region takes place within a few superlattice periods near p-barrier. Possible reason for themore » effect is reduction of hole diffusion coefficient in an active area of a superlattice LED under bias.« less

Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

DOEpatents

Alivisatos, A. Paul; Colvin, Vickie

1996-01-01

An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well

NASA Astrophysics Data System (ADS)

Rendell, M.; Klochan, O.; Srinivasan, A.; Farrer, I.; Ritchie, D. A.; Hamilton, A. R.

2015-10-01

We perform magnetic focussing of high mobility holes confined in a shallow GaAs/Al0.33Ga0.67As quantum well grown on a (100) GaAs substrate. We observe ballistic focussing of holes over a path length of up to 4.9 μm with a large number of focussing peaks. We show that additional structure on the focussing peaks can be caused by a combination of the finite width of the injector quantum point contact and Shubnikov-de Haas oscillations. These results pave the way to studies of spin-dependent magnetic focussing and spin relaxation lengths in two-dimentional hole systems without complications of crystal anisotropies and anisotropic g-tensors.

A teleoperation training simulator with visual and kinesthetic force virtual reality

NASA Technical Reports Server (NTRS)

Kim, Won S.; Schenker, Paul

1992-01-01

A force-reflecting teleoperation training simulator with a high-fidelity real-time graphics display has been developed for operator training. A novel feature of this simulator is that it enables the operator to feel contact forces and torques through a force-reflecting controller during the execution of the simulated peg-in-hole task, providing the operator with the feel of visual and kinesthetic force virtual reality. A peg-in-hole task is used in our simulated teleoperation trainer as a generic teleoperation task. A quasi-static analysis of a two-dimensional peg-in-hole task model has been extended to a three-dimensional model analysis to compute contact forces and torques for a virtual realization of kinesthetic force feedback. The simulator allows the user to specify force reflection gains and stiffness (compliance) values of the manipulator hand for both the three translational and the three rotational axes in Cartesian space. Three viewing modes are provided for graphics display: single view, two split views, and stereoscopic view.

SiO2 Hole Etching Using Perfluorocarbon Alternative Gas with Small Global Greenhouse Effect

NASA Astrophysics Data System (ADS)

Ooka, Masahiro; Yokoyama, Shin

2004-06-01

The etching of contact holes of 0.1 μm size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the radio frequency (rf) power is extended.

Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning.

PubMed

Bao, Zhong-Min; Xu, Rui-Peng; Li, Chi; Xie, Zhong-Zhi; Zhao, Xin-Dong; Zhang, Yi-Bo; Li, Yan-Qing; Tang, Jian-Xin

2016-08-31

Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky-Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.

Plasmonic hole arrays for combined photon and electron management

DOE PAGES

Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

2016-11-14

Material architectures that balance optical transparency and electrical conductivity are highly sought after for thin-film device applications. However, these are competing properties, since the electronic structure that gives rise to conductivity typically also leads to optical opacity. Nanostructured metal films that exhibit extraordinary optical transmission, while at the same time being electrically continuous, offer considerable flexibility in the design of their transparency and resistivity. In this paper, we present design guidelines for metal films perforated with arrays of nanometer-scale holes, discussing the consequences of the choice of nanostructure dimensions, of the type of metal, and of the underlying substrate onmore » their electrical, optical, and interfacial properties. We experimentally demonstrate that such films can be designed to have broad-band optical transparency while being an order of magnitude more conductive than indium tin oxide. Finally, prototypical photovoltaic devices constructed with perforated metal contacts convert ~18% of the incident photons, compared to <1% for identical devices having contacts without the hole array.« less

From hilltop to kettle hole: what trends across the terrestrial-aquatic transition zone are revealed by organic matter stable isotope (δ13C and δ15N) composition?

NASA Astrophysics Data System (ADS)

Kayler, Z. E.; Nitzsche, K. N.; Gessler, A.; Kaiser, M. L.; Hoffmann, C.; Premke, K.; Ellerbrock, R.

2016-12-01

Steep environmental gradients develop across the interface between terrestrial and aquatic domains that influence organic matter (OM) retention. In NE Germany, kettle holes are small water bodies found in high density across managed landscapes. Kettle hole water budgets are generally fed through precipitation and overland flow and are temporarily connected to groundwater resulting in distinct hydroperiods. We took advantage of the range of environmental conditions created by the fluctuating shoreline to investigate patterns of OM stability along transects spanning from hilltops to sediments within a single kettle hole. We physically and chemically separated OM fractions that are expected to be loosely bound, such as particulate organic matter, to those that are tightly bound, such as OM associated with mineral or metal surfaces. The study design allowed us to investigate stabilization processes at the aggregate, transect, and kettle hole catchment scale. At the aggregate scale, we analyzed soil characteristics (texture, pH, extractable Al, Fe, Ca) to contribute to our understanding of OM stabilization. At the transect scale, we compared isotopic trends in the different fractions against a simple Rayleigh distillation model to infer disruption of the transfer of material, for example erosion, by land management such as tillage or the addition of OM through fertilization. At the kettle hole catchment scale, we correlated our findings with plant productivity, landform properties, and soil wetness proxies. Aggregate scale patterns of OM 13C and 15N were fraction dependent; however, we observed a convergence in isotopic patterns with soil properties from OM of more stabilized fractions. At the transect scale, loosely bound fractions did not conform to the simple model, suggesting these fractions are more dynamic and influenced by land management. The stabilized fractions did follow the Rayleigh model, which implies that transfer processes play a larger role in these fractions. At the kettle hole catchment scale, we found that the terrestrial-aquatic transition zone and other areas with high soil moisture correlated with isotopic patterns of the OM fractions. Kettle hole sediment OM fraction patterns were consistently different despite receiving substantial material from the surrounding landscape.

30 CFR 816.68 - Use of explosives: Records of blasting operations.

Code of Federal Regulations, 2010 CFR

2010-07-01

.... (f) Type of material blasted. (g) Sketches of the blast pattern including number of holes, burden, spacing, decks, and delay pattern. (h) Diameter and depth of holes. (i) Types of explosives used. (j...-millisecond period. (l) Initiation system. (m) Type and length of stemming. (n) Mats or other protections used...

30 CFR 817.68 - Use of explosives: Records of blasting operations.

Code of Federal Regulations, 2010 CFR

2010-07-01

.... (f) Type of material blasted. (g) Sketches of the blast pattern including number of holes, burden, spacing, decks, and delay pattern. (h) Diameter and depth of holes. (i) Types of explosives used. (j...-millisecond period. (l) Initiation system. (m) Type and length of stemming. (n) Mats or other protections used...

30 CFR 817.68 - Use of explosives: Records of blasting operations.

Code of Federal Regulations, 2011 CFR

2011-07-01

.... (f) Type of material blasted. (g) Sketches of the blast pattern including number of holes, burden, spacing, decks, and delay pattern. (h) Diameter and depth of holes. (i) Types of explosives used. (j...-millisecond period. (l) Initiation system. (m) Type and length of stemming. (n) Mats or other protections used...

30 CFR 816.68 - Use of explosives: Records of blasting operations.

Code of Federal Regulations, 2011 CFR

2011-07-01

.... (f) Type of material blasted. (g) Sketches of the blast pattern including number of holes, burden, spacing, decks, and delay pattern. (h) Diameter and depth of holes. (i) Types of explosives used. (j...-millisecond period. (l) Initiation system. (m) Type and length of stemming. (n) Mats or other protections used...

Electron and hole transport in ambipolar, thin film pentacene transistors

NASA Astrophysics Data System (ADS)

Saudari, Sangameshwar R.; Kagan, Cherie R.

2015-01-01

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ˜78 and ˜28 meV for electrons and holes, respectively, which reflects a greater density of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.

Electron holes appear to trigger cancer-implicated mutations

NASA Astrophysics Data System (ADS)

Miller, John; Villagran, Martha

Malignant tumors are caused by mutations, which also affect their subsequent growth and evolution. We use a novel approach, computational DNA hole spectroscopy [M.Y. Suarez-Villagran & J.H. Miller, Sci. Rep. 5, 13571 (2015)], to compute spectra of enhanced hole probability based on actual sequence data. A hole is a mobile site of positive charge created when an electron is removed, for example by radiation or contact with a mutagenic agent. Peaks in the hole spectrum depict sites where holes tend to localize and potentially trigger a base pair mismatch during replication. Our studies of reveal a correlation between hole spectrum peaks and spikes in human mutation frequencies. Importantly, we also find that hole peak positions that do not coincide with large variant frequencies often coincide with cancer-implicated mutations and/or (for coding DNA) encoded conserved amino acids. This enables combining hole spectra with variant data to identify critical base pairs and potential cancer `driver' mutations. Such integration of DNA hole and variance spectra could also prove invaluable for pinpointing critical regions, and sites of driver mutations, in the vast non-protein-coding genome. Supported by the State of Texas through the Texas Ctr. for Superconductivity.

Binary Black Holes and Gravitational Waves

NASA Technical Reports Server (NTRS)

Centrella, Joan

2007-01-01

The final merger of two black holes releases a tremendous amount of energy, more than the combined light from all the stars in the visible universe. This energy is emitted in the form of gravitational waves, and observing these sources with gravitational wave detectors such as LIGO and LISA requires that we know the pattern or fingerprint of the radiation emitted. Since black hole mergers take place in regions of extreme gravitational fields, we need to solve Einstein's equations of general relativity on a computer in order to calculate these wave patterns.

Research on the Perforating Algorithm Based on STL Files

NASA Astrophysics Data System (ADS)

Yuchuan, Han; Xianfeng, Zhu; Yunrui, Bai; Zhiwen, Wu

2018-04-01

In the process of making medical personalized external fixation brace, the 3D data file should be perforated to increase the air permeability and reduce the weight. In this paper, a perforating algorithm for 3D STL file is proposed, which can perforate holes, hollow characters and engrave decorative patterns on STL files. The perforating process is composed of three steps. Firstly, make the imaginary space surface intersect with the STL model, and reconstruct triangles at the intersection. Secondly, delete the triangular facets inside the space surface and make a hole on the STL model. Thirdly, triangulate the inner surface of the hole, and thus realize the perforating. Choose the simple space equations such as cylindrical and rectangular prism equations as perforating equations can perforate round holes and rectangular holes. Through the combination of different holes, lettering, perforating decorative patterns and other perforated results can be accomplished. At last, an external fixation brace and an individual pen container were perforated holes using the algorithm, and the expected results were reached, which proved the algorithm is feasible.

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

PubMed Central

Hussain, Sajid; Pozzato, Alessandro; Tormen, Massimo; Zannier, Valentina; Biasiol, Giorgio

2016-01-01

Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots. PMID:28773333

On the use of the hole-drilling technique for residual stress measurements in thin plates

NASA Technical Reports Server (NTRS)

Hampton, R. W.; Nelson, D. V.

1992-01-01

The strain gage blind hole-drilling technique may be used to determine residual stresses at and below the surface of components. In this paper, the hole-drilling analysis methodology for thick plates is reviewed, and experimental data are used to evaluate the methodology and to assess its applicability to thin plates. Data on the effects of gage pattern, surface preparation, hole spacing, hole eccentricity, and stress level are also presented.

Silicon heterojunction solar cell with passivated hole selective MoOx contact

NASA Astrophysics Data System (ADS)

Battaglia, Corsin; de Nicolás, Silvia Martín; De Wolf, Stefaan; Yin, Xingtian; Zheng, Maxwell; Ballif, Christophe; Javey, Ali

2014-03-01

We explore substoichiometric molybdenum trioxide (MoOx, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoOx, we observe a substantial gain in photocurrent of 1.9 mA/cm2 in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selective heterojunction partners to inorganic semiconductors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Dong, E-mail: wang.dong.539@m.kyushu-u.ac.jp; Maekura, Takayuki; Kamezawa, Sho

We demonstrated direct band gap (DBG) electroluminescence (EL) at room temperature from n-type bulk germanium (Ge) using a fin type asymmetric lateral metal/Ge/metal structure with TiN/Ge and HfGe/Ge contacts, which was fabricated using a low temperature (<400 °C) process. Small electron and hole barrier heights were obtained for TiN/Ge and HfGe/Ge contacts, respectively. DBG EL spectrum peaked at 1.55 μm was clearly observed even at a small current density of 2.2 μA/μm. Superlinear increase in EL intensity was also observed with increasing current density, due to superlinear increase in population of elections in direct conduction band. The efficiency of hole injection was alsomore » clarified.« less

The Fourth Circuit Kicks a Hole through the Contact-Sport Exception to Title IX.

ERIC Educational Resources Information Center

Puszczewicz, James

2000-01-01

Discusses a recent Fourth Circuit Court of Appeals decision that when individuals are allowed to try out for or join a team participating in a contact sport and operated for members of the other sex, then discrimination against because of their sex is prohibited by Title IX. (22 footnotes) (MLF)

TFB:TPDSi2 interfacial layer usable in organic photovoltaic cells

DOEpatents

Marks, Iobin J [Evanston, IL; Hains, Alexander W [Evanston, IL

2011-02-15

The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode; an active organic layer comprising an electron-donating organic material and an electron-accepting organic material; and an interfacial layer formed between the anode and active organic layer, where the interfacial layer comprises a hole-transporting polymer characterized with a hole-mobility higher than that of the electron-donating organic material in the active organic layer, and a small molecule that has a high hole-mobility and is capable of crosslinking on contact with air.

Multi-contact Variable-Compliance Manipulation in Extreme Clutter

DTIC Science & Technology

2014-06-16

house to find eggs and young. (b) When noodling , people find catfish holes from which to pull fish out. (c)-(d) A person makes contact along his...Figure 7: Haptic Map of detected rigid contacts. by mapping all the rigid taxels at every time- instant . For visualizing the haptic map, we use point...the environment while reaching into clutter. (a) A raccoon reaches into a bird house to find eggs and young. (b) When noodling , people find catfish

Formation of precise 2D Au particle arrays via thermally induced dewetting on pre-patterned substrates

PubMed Central

Ji, Ran

2011-01-01

Summary The fabrication of precise 2D Au nanoparticle arrays over a large area is presented. The technique was based on pre-patterning of the substrate before the deposition of a thin Au film, and the creation of periodic particle arrays by subsequent dewetting induced by annealing. Two types of pre-patterned substrates were used: The first comprised an array of pyramidal pits and the second an array of circular holes. For the dewetting of Au films on the pyramidal pit substrate, the structural curvature-driven diffusion cooperates with capillarity-driven diffusion, resulting in the formation of precise 2D particle arrays for films within a structure dependent thickness-window. For the dewetting of Au films on the circular hole substrate, the periodic discontinuities in the films, induced by the deposition, can limit the diffusion paths and lead to the formation of one particle per individual separated region (holes or mesas between holes), and thus, result in the evolution of precise 2D particle arrays. The influence of the pre-patterned structures and the film thickness is analyzed and discussed. For both types of pre-patterned substrate, the Au film thickness had to be adjusted in a certain thickness-window in order to achieve the precise 2D particle arrays. PMID:21977445

Influence of Molecular Orientation on Charge-Transfer Processes at Phthalocyanine/Metal Oxide Interfaces and Relationship to Organic Photovoltaic Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Hsiao-Chu; MacDonald, Gordon A.; Shi, Yanrong

2015-05-04

The effect of the molecular orientation distribution of the first monolayer of donor molecules at the hole-harvesting contact in an organic photovoltaic (OPV) on device efficiency was investigated. Two zinc phthalocyanine (ZnPc) phosphonic acids (PA) deposited on indium tin oxide (ITO) electrodes are compared: ZnPc(PA)4 contains PA linkers in all four quadrants, and ZnPcPA contains a PA linker in one quadrant. ZnPcPA monolayers exhibited a broad distribution of molecular orientations whereas ZnPc(PA)4 adsorption produced a monolayer with a narrower orientation distribution with the molecular plane more parallel to the ITO surface. We used potential-modulated attenuated total reflectance spectroelectrochemistry (PM-ATR) tomore » characterize the charge-transfer kinetics of these films and show that the highest rate constants correspond to ZnPc subpopulations that are oriented more parallel to the ITO surface plane. For ZnPc(PA)4, rate constants exceeded 104 s–1 and are among the highest ever reported for a surface-confined redox couple, which is attributable to both its orientation and the small ZnPc–electrode separation distance. The performance of OPVs with ITO hole-harvesting contacts modified with ZnPc(PA)4 was comparable to that achieved with highly activated bare ITO contacts, whereas for ZnPcPA-modified contacts, the OPV performance was similar to that observed with (hole-blocking) alkyl-PA modifiers. These results demonstrate the synergism between molecular structure, energetics, and dynamics at interfaces in OPVs.« less

Comparison and characterization of different tunnel layers, suitable for passivated contact formation

NASA Astrophysics Data System (ADS)

Ling, Zhi Peng; Xin, Zheng; Ke, Cangming; Jammaal Buatis, Kitz; Duttagupta, Shubham; Lee, Jae Sung; Lai, Archon; Hsu, Adam; Rostan, Johannes; Stangl, Rolf

2017-08-01

Passivated contacts for solar cells can be realized using a variety of differently formed ultra-thin tunnel oxide layers. Assessing their interface properties is important for optimization purposes. In this work, we demonstrate the ability to measure the interface defect density distribution D it(E) and the fixed interface charge density Q f for ultra-thin passivation layers operating within the tunnel regime (<2 nm). Various promising tunnel layer candidates [i.e., wet chemically formed SiO x , UV photo-oxidized SiO x , and atomic layer deposited (ALD) AlO x ] are investigated for their potential application forming electron or hole selective tunnel layer passivated contacts. In particular, ALD AlO x is identified as a promising tunnel layer candidate for hole-extracting passivated contact formation, stemming from its high (negative) fixed interface charge density in the order of -6 × 1012 cm-2. This is an order of magnitude higher compared to wet chemically or UV photo-oxidized formed silicon oxide tunnel layers, while keeping the density of interface defect states D it at a similar level (in the order of ˜2 × 1012 cm-2 eV-1). This leads to additional field effect passivation and therefore to significantly higher measured effective carrier lifetimes (˜2 orders of magnitude). A surface recombination velocity of ˜40 cm/s has been achieved for a 1.5 nm thin ALD AlO x tunnel layer prior to capping by an additional hole transport material, like p-doped poly-Si or PEDOT:PSS.

The lithographer's dilemma: shrinking without breaking the bank

NASA Astrophysics Data System (ADS)

Levinson, Harry J.

2013-10-01

It can no longer be assumed that the lithographic scaling which has previously driven Moore's Law will lead in the future to reduced cost per transistor. Until recently, higher prices for lithography tools were offset by improvements in scanner productivity. The necessity of using double patterning to extend scaling beyond the single exposure resolution limit of optical lithography has resulted in a sharp increase in the cost of patterning a critical construction layer that has not been offset by improvements in exposure tool productivity. Double patterning has also substantially increased the cost of mask sets. EUV lithography represents a single patterning option, but the combination of very high exposure tools prices, moderate throughput, high maintenance costs, and expensive mask blanks makes this a solution more expensive than optical double patterning but less expensive than triple patterning. Directed self-assembly (DSA) could potentially improve wafer costs, but this technology currently is immature. There are also design layout and process integration issues associated with DSA that need to be solved in order to obtain full benefit from tighter pitches. There are many approaches for improving the cost effectiveness of lithography. Innovative double patterning schemes lead to smaller die. EUV lithography productivity can be improved with higher power light sources and improved reliability. There are many technical and business challenges for extending EUV lithography to higher numerical apertures. Efficient contact hole and cut mask solutions are needed, as well as very tight overlay control, regardless of lithographic solution.

HOLE-BLOCKING LAYERS FOR SILICON/ORGANIC HETEROJUNCTIONS: A NEW CLASS OF HIGH-EFFICIENCY LOW-COST PV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sturm, James

This project is the first investigation of the use of thin titanium dioxide layers on silicon as a hole-blocking / electron-transparent selective contact to silicon. The work was motivated by the goal of a high-efficiency low-cost silicon-based solar cells that could be processed entirely at low temperature (300 Degree Celsius) or less, without requiring plasma-processing.

Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate

NASA Astrophysics Data System (ADS)

Wang, Kejia; Wang, Anqi; Ji, Qingbin; Hu, Xiaodong; Xie, Yahong; Sun, Ying; Cheng, Zhiyuan

2017-12-01

Dislocation filtering in gallium nitride (GaN) by epitaxial growth through patterned nanoscale holes is studied. GaN grown from extremely high aspect ratio holes by metalorganic chemical vapor deposition is examined by transmission electron microscopy and high-resolution transmission electron microscopy. This selective area epitaxial growth method with a reduced epitaxy area and an increased depth to width ratio of holes leads to effective filtering of dislocations within the hole and improves the quality of GaN significantly.

Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices.

PubMed

Zimmermann, Katrin; Jordan, Anna; Gay, Frédéric; Watanabe, Kenji; Taniguchi, Takashi; Han, Zheng; Bouchiat, Vincent; Sellier, Hermann; Sacépé, Benjamin

2017-04-13

Charge carriers in the quantum Hall regime propagate via one-dimensional conducting channels that form along the edges of a two-dimensional electron gas. Controlling their transmission through a gate-tunable constriction, also called quantum point contact, is fundamental for many coherent transport experiments. However, in graphene, tailoring a constriction with electrostatic gates remains challenging due to the formation of p-n junctions below gate electrodes along which electron and hole edge channels co-propagate and mix, short circuiting the constriction. Here we show that this electron-hole mixing is drastically reduced in high-mobility graphene van der Waals heterostructures thanks to the full degeneracy lifting of the Landau levels, enabling quantum point contact operation with full channel pinch-off. We demonstrate gate-tunable selective transmission of integer and fractional quantum Hall edge channels through the quantum point contact. This gate control of edge channels opens the door to quantum Hall interferometry and electron quantum optics experiments in the integer and fractional quantum Hall regimes of graphene.

Implicit Multibody Penalty-BasedDistributed Contact.

PubMed

Xu, Hongyi; Zhao, Yili; Barbic, Jernej

2014-09-01

The penalty method is a simple and popular approach to resolving contact in computer graphics and robotics. Penalty-based contact, however, suffers from stability problems due to the highly variable and unpredictable net stiffness, and this is particularly pronounced in simulations with time-varying distributed geometrically complex contact. We employ semi-implicit integration, exact analytical contact gradients, symbolic Gaussian elimination and a SVD solver to simulate stable penalty-based frictional contact with large, time-varying contact areas, involving many rigid objects and articulated rigid objects in complex conforming contact and self-contact. We also derive implicit proportional-derivative control forces for real-time control of articulated structures with loops. We present challenging contact scenarios such as screwing a hexbolt into a hole, bowls stacked in perfectly conforming configurations, and manipulating many objects using actively controlled articulated mechanisms in real time.

Dual contact pogo pin assembly

DOEpatents

Hatch, Stephen McGarry

2015-01-20

A contact assembly includes a base and a pair of electrical contacts supported by the base. A first end of the first electrical contact corresponds to a first end of the base and is configured to engage a first external conductive circuit element. A first end of the second electrical contact also corresponds to the first end of the base and is configured to engage a second external conductive circuit element. The first contact and the second contact are electrically isolated from one another and configured to compress when engaging an external connector element. The base includes an aperture positioned on a second end of the base outboard of a second end of the first and second electrical contacts. The aperture presents a narrowing shape with a wide mouth distal the electrical contacts and a narrow internal through-hole proximate the electrical contacts.

Dual contact pogo pin assembly

DOEpatents

Hatch, Stephen McGarry

2016-06-21

A contact assembly includes a base and a pair of electrical contacts supported by the base. A first end of the first electrical contact corresponds to a first end of the base and is configured to engage a first external conductive circuit element. A first end of the second electrical contact also corresponds to the first end of the base and is configured to engage a second external conductive circuit element. The first contact and the second contact are electrically isolated from one another and configured to compress when engaging an external connector element. The base includes an aperture positioned on a second end of the base outboard of a second end of the first and second electrical contacts. The aperture presents a narrowing shape with a wide mouth distal the electrical contacts and a narrow internal through-hole proximate the electrical contacts.

Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits.

PubMed

Larentis, Stefano; Fallahazad, Babak; Movva, Hema C P; Kim, Kyounghwan; Rai, Amritesh; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; Tutuc, Emanuel

2017-05-23

Transition metal dichalcogenides are of interest for next generation switches, but the lack of low resistance electron and hole contacts in the same material has hindered the development of complementary field-effect transistors and circuits. We demonstrate an air-stable, reconfigurable, complementary monolayer MoTe 2 field-effect transistor encapsulated in hexagonal boron nitride, using electrostatically doped contacts. The introduction of a multigate design with prepatterned bottom contacts allows us to independently achieve low contact resistance and threshold voltage tuning, while also decoupling the Schottky contacts and channel gating. We illustrate a complementary inverter and a p-i-n diode as potential applications.

Prospect of the high efficiency for the VEST (Via-hole Etching for the Separation of Thin films) cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deguchi, M.; Kawama, Y.; Matsuno, Y.

1994-12-31

The optimum design of the via-holes for the VEST cell was studied. Using a simple model, fill factors of the VEST cell were calculated. As for the via-hole distribution pattern, square grid pattern was found to be most suitable from the view points of the cell performance and the easiness of the electrode designing. It was found that the fill factor large enough (> 0.79) for the high efficiency can be obtained. A fabricated test cell showed the efficiency of 14.4%. Further improvement (efficiency over 18%) is possibly expected.

Binary Black Holes and Gravitational Waves

NASA Technical Reports Server (NTRS)

Centrella, Joan

2007-01-01

The final merger of two black holes releases a tremendous amount of energy, more than the combined light from all the stars in the visible universe. This energy is emitted in the form of gravitational waves, and observing these sources with gravitational wave detectors such as LIGO and LISA requires that we know the pattern or fingerprint of the radiation emitted. Since black hole mergers take place in regions of extreme gravitational fields, we need to solve Einstein's equations of general relativity on a computer in order to calculate these wave patterns. For more than 30 years, scientists have tried to compute these wave patterns. However, their computer codes have been plagued by problems that caused them to crash. This situation has changed dramatically in the past 2 years, with a series of amazing breakthroughs. This discussion examines these gravitational patterns, showing how a spacetime is constructed on a computer to build a simulation laboratory for binary black hole mergers. The focus is on recent advances that are revealing these waveforms, and the dramatic new potential for discoveries that arises when these sources will be observed by the space-based gravitational wave detector LISA.

Binary Black Holes, Numerical Relativity, and Gravitational Waves

NASA Technical Reports Server (NTRS)

Centrella, Joan

2007-01-01

The final merger of two black holes releases a tremendous amount of energy, more than the combined light from all the stars in the visible universe. This energy is emitted in the form of gravitational waves, and observing these sources with gravitational wave detectors such as LISA requires that we know the pattern or fingerprint of the radiation emitted. Since black hole mergers take place in regions of extreme gravitational fields, we need to solve Einstein's equations of general relativity on a computer in order to calculate these wave patterns. For more than 30 years, scientists have tried to compute these wave patterns. However, their computer codes have been plagued by problems that caused them to crash. This situation has changed dramatically in the past 2 years, with a series of amazing breakthroughs. This talk will take you on this quest for these gravitational wave patterns, showing how a spacetime is constructed on a computer to build a simulation laboratory for binary black hole mergers. We will focus on the recent advances that are revealing these waveforms, and the dramatic new potential for discoveries that arises when these sources will be observed by LISA

Cosmic Messengers: Binary Black Holes and Gravitational Waves

NASA Technical Reports Server (NTRS)

Centrella, Joan

2007-01-01

The final merger of two black holes releases a tremendous amount of energy, more than the combined light from all the stars in the visible universe. This energy is emitted in the form of gravitational waves, and observing these sources with gravitational wave detectors such as LISA requires that we know the pattern or fingerprint of the radiation emitted. Since black hole mergers take place in regions of extreme gravitational fields, we need to solve Einstein s equations of general relativity on a computer in order to calculate these wave patterns. For more than 30 years, scientists have tried to compute these wave patterns. However, their computer codes have been plagued by problems that caused them to crash. . This situation has changed dramatically in the past 2 years, with a series of amazing breakthroughs. This talk will take you on this quest for these gravitational wave patterns, showing how a spacetime is constructed on a computer to build a simulation laboratory for binary black hole mergers. We will focus on the recent advances that are revealing these waveforms, and the dramatic new potential for discoveries that arises when these sources will. be observed by LISA.

High-Si content BARC for dual-BARC systems such as trilayer patterning

NASA Astrophysics Data System (ADS)

Kennedy, Joseph; Xie, Song-Yuan; Wu, Ze-Yu; Katsanes, Ron; Flanigan, Kyle; Lee, Kevin; Slezak, Mark; Liu, Zhi; Lin, Shang-Ho

2009-03-01

This work discusses the requirements and performance of Honeywell's middle layer material, UVAS, for tri-layer patterning. UVAS is a high Si content polymer synthesized directly from Si containing starting monomer components. The monomers are selected to produce a film that meets the requirements as a middle layer for tri-layer patterning (TLP) and gives us a level of flexibility to adjust the properties of the film to meet the customer's specific photoresist and patterning requirements. Results of simulations of the substrate reflectance versus numerical aperture, UVAS thickness, and under layer film are presented. ArF photoresist line profiles and process latitude versus UVAS bake at temperatures as low as 150ºC are presented and discussed. Immersion lithographic patterning of ArF photoresist line space and contact hole features will be presented. A sequence of SEM images detailing the plasma etch transfer of line space photoresist features through the middle and under layer films comprising the TLP film stack will be presented. Excellent etch selectivity between the UVAS and the organic under layer film exists as no edge erosion or faceting is observed as a result of the etch process. A detailed study of the impact of a PGMEA solvent photoresist rework process on the lithographic process window of a TLP film stack was performed with the results indicating that no degradation to the UVAS film occurs.

In Vivo Measurement of Glenohumeral Joint Contact Patterns

NASA Astrophysics Data System (ADS)

Bey, Michael J.; Kline, Stephanie K.; Zauel, Roger; Kolowich, Patricia A.; Lock, Terrence R.

2009-12-01

The objectives of this study were to describe a technique for measuring in-vivo glenohumeral joint contact patterns during dynamic activities and to demonstrate application of this technique. The experimental technique calculated joint contact patterns by combining CT-based 3D bone models with joint motion data that were accurately measured from biplane x-ray images. Joint contact patterns were calculated for the repaired and contralateral shoulders of 20 patients who had undergone rotator cuff repair. Significant differences in joint contact patterns were detected due to abduction angle and shoulder condition (i.e., repaired versus contralateral). Abduction angle had a significant effect on the superior/inferior contact center position, with the average joint contact center of the repaired shoulder 12.1% higher on the glenoid than the contralateral shoulder. This technique provides clinically relevant information by calculating in-vivo joint contact patterns during dynamic conditions and overcomes many limitations associated with conventional techniques for quantifying joint mechanics.

σ-Hole and π-Hole Synthon Mimicry in Third-Generation Crystal Engineering: Design of Elastic Crystals.

PubMed

Saha, Subhankar; Desiraju, Gautam R

2017-04-06

Designing elastic crystals is a difficult task and is of relevance in potential applications from materials to biology. Here, multi-step crystal engineering based on σ-hole and π-hole synthon mimicry is performed to obtain binary organic molecular crystals with a high degree of flexibility. A structural model is proposed based only on σ-hole-oriented type-II halogen bonds with their characteristic orthogonal geometry. These σ-hole contacts are then partly replaced by chemically and geometrically similar π-hole synthons to obtain new crystals in the second step. In the final step, all the σ-hole interactions are replaced with π-hole interactions and elastic crystals of non-halogenated compounds are obtained. All the crystals obtained according to our protocols are found to be elastic. When crystals that do not conform to the desired structure type appeared, they were found to be brittle. This underlines the role of orthogonal-type interactions, whether they are of the σ-hole or π-hole type, in achieving elasticity. This is the first report in which π-hole interactions are used for property engineering. This example may illustrate a new generation of crystal engineering in which a particular property is associated more with topological rather than chemical attributes, although the significance of the latter cannot be completely excluded. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fujiki, K.; Tokumaru, M.; Hayashi, K.

We developed an automated prediction technique for coronal holes using potential magnetic field extrapolation in the solar corona to construct a database of coronal holes appearing from 1975 February to 2015 July (Carrington rotations from 1625 to 2165). Coronal holes are labeled with the location, size, and average magnetic field of each coronal hole on the photosphere and source surface. As a result, we identified 3335 coronal holes and found that the long-term distribution of coronal holes shows a similar pattern known as the magnetic butterfly diagram, and polar/low-latitude coronal holes tend to decrease/increase in the last solar minimum relativemore » to the previous two minima.« less

Numerical analysis of the effect of side holes of a double J stent on flow rate and pattern.

PubMed

Kim, Kyung-Wuk; Choi, Young Ho; Lee, Seung Bae; Baba, Yasutaka; Kim, Hyoung-Ho; Suh, Sang-Ho

2015-01-01

A double J stent has been used widely these days for patients with a ureteral stenosis or with renal stones and lithotripsy. The stent has multiple side holes in the shaft, which supply detours for urine flow. Even though medical companies produce various forms of double J stents that have different numbers and positions of side holes in the stent, the function of side holes in fluid dynamics has not been studied well. Here, the flow rate and pattern around the side holes of a double J stent were evaluated in curved models of a stented ureter based on the human anatomy and straight models for comparison. The total flow rate was higher in the stent with a greater number of side holes. The inflow and outflow to the stent through the side holes in the curved ureter was more active than in the straight ureter, which means the flow through side holes exists even in the ureter without ureteral stenosis or occlusion and even in the straight ureter. When the diameter of the ureter changed, the in-stent flow rate in the ureter did not change and the extraluminal flow rate was higher in the ureter with a greater diameter.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saudari, Sangameshwar R.; Kagan, Cherie R.; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104

Solution-processed, ambipolar, thin-film pentacene field-effect transistors were employed to study both electron and hole transport simultaneously in a single, organic solid-state device. Electron and hole mobilities were extracted from the respective unipolar saturation regimes and show thermally activated behavior and gate voltage dependence. We fit the gate voltage dependent saturation mobility to a power law to extract the characteristic Meyer-Neldel (MN) energy, a measure of the width of the exponential distribution of localized states extending into the energy gap of the organic semiconductor. The MN energy is ∼78 and ∼28 meV for electrons and holes, respectively, which reflects a greater densitymore » of localized tail states for electrons than holes. This is consistent with the lower measured electron than hole mobility. For holes, the well-behaved linear regime allows for four-point probe measurement of the contact resistance independent mobility and separate characterization of the width of the localized density of states, yielding a consistent MN energy of 28 meV.« less

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Ohmic resistance of metal contacts with GaInAsP/InP double heterostructures as a function of the composition of the capping layer

NASA Astrophysics Data System (ADS)

Vogel, K.; Maly, D.; Puchert, R.; Schade, U.

1988-11-01

Characteristics of low-resistance Au-Cr-Au contacts with a quaternary solid solution, isoperiodic with GaInAsP, were determined as a function of the composition. These contacts were used in injection lasers emitting in the range of 1.3 μm. The smallest specific resistance (2 × 10- 5 Ω · cm2) was obtained for a contact with a GaInAs layer characterized by a hole density of ~ 1019 cm- 3.

Method of manufacturing a hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2017-02-07

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

Ascariasis

MedlinePlus

... liver Blockage in the intestine Hole in the gut When to Contact a Medical Professional Call your ... In: Bogitsh BJ, Carter CE, Oeltmann TN, eds. Human Parasitology . 4th ed. Waltham, MA: Elsevier Academic Press; ...

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE PAGES

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter; ...

2015-10-26

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

Transparent electrodes in silicon heterojunction solar cells: Influence on contact passivation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomasi, Andrea; Sahli, Florent; Seif, Johannes Peter

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solarmore » cells. As a result, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.« less

Silicon heterojunction solar cell with passivated hole selective MoO{sub x} contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battaglia, Corsin; Yin, Xingtian; Zheng, Maxwell

2014-03-17

We explore substoichiometric molybdenum trioxide (MoO{sub x}, x < 3) as a dopant-free, hole-selective contact for silicon solar cells. Using an intrinsic hydrogenated amorphous silicon passivation layer between the oxide and the silicon absorber, we demonstrate a high open-circuit voltage of 711 mV and power conversion efficiency of 18.8%. Due to the wide band gap of MoO{sub x}, we observe a substantial gain in photocurrent of 1.9 mA/cm{sup 2} in the ultraviolet and visible part of the solar spectrum, when compared to a p-type amorphous silicon emitter of a traditional silicon heterojunction cell. Our results emphasize the strong potential for oxides as carrier selectivemore » heterojunction partners to inorganic semiconductors.« less

Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO

NASA Astrophysics Data System (ADS)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-04-01

The effects of hole injection in amorphous indium-gallium-zinc-oxide (a-IGZO) are analyzed by means of first-principles calculations. The injection of holes in the valence band tail states leads to their capture as a polaron, with high self-trapping energies (from 0.44 to 1.15 eV). Once formed, they mediate the formation of peroxides and remain localized close to the hole injection source due to the presence of a large diffusion energy barrier (of at least 0.6 eV). Their diffusion mechanism can be mediated by the presence of hydrogen. The capture of these holes is correlated with the low off-current observed for a-IGZO transistors, as well as with the difficulty to obtain a p-type conductivity. The results further support the formation of peroxides as being the root cause of Negative Bias Illumination Stress (NBIS). The strong self-trapping substantially reduces the injection of holes from the contact and limits the creation of peroxides from a direct hole injection. In the presence of light, the concentration of holes substantially rises and mediates the creation of peroxides, responsible for NBIS.

The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hongtao; Desai, P.; Kreouzis, T.

To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) based spin valves, single Alq{sub 3} layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq{sub 3}, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq{sub 3} based spin valves with NiFe or Fe electrodes aremore » holes.« less

Electron-positron outflow from black holes.

PubMed

van Putten, M H

2000-04-24

Cosmological gamma-ray bursts (GRBs) appear as the brightest transient phenomena in the Universe. The nature of their central engine is a missing link in the theory of fireballs to stellar mass progenitors, and may be associated with low mass black holes. In contact with an external magnetic field B, black hole spin produces a gravitational potential on the wave function of charged particles. We show that a rapidly rotating black hole of mass M produces outflow from initially electrostatic equilibrium with normalized isotropic emission approximately 10(48)(B/B(c))(2)(M/7M)(2)sin (2) theta erg/s, where B(c) = 4.4x10(13) G. The half-opening angle satisfies theta >or = square root[B(c)/3B]. The outflow proposed as input to GRB fireball models.

Friction pull plug welding: dual chamfered plate hole

NASA Technical Reports Server (NTRS)

Coletta, Edmond R. (Inventor); Cantrell, Mark A. (Inventor)

2001-01-01

Friction Pull Plug Welding (FPPW) is a solid state repair process for defects up to one inch in length, only requiring single sided tooling (OSL) for usage on flight hardware. Early attempts with FPPW followed the matching plug/plate geometry precedence of the successful Friction Push Plug Welding program, however no defect free welds were achieved due to substantial plug necking and plug rotational stalling. The dual chamfered hole has eliminated plug rotational stalling, both upon initial plug/plate contact and during welding. Also, the necking of the heated plug metal under a tensile heating/forging load has been eliminated through the usage of the dual chamfered plate hole.

Crack detection in fastener holes using surface acoustic wave

NASA Astrophysics Data System (ADS)

Bao, Xiao-Qi; Varadan, Vasundara V.; Varadan, Vijay K.

1995-05-01

This paper presents an investigation of the monitoring of cracks at the edge of fastener holes on plates using an ultrasonic pulse-echo technique. Our studies show that, if the surface of the plate surrounding the hold is free, an acoustic wave on the surface of the plate is able to detect the cracks located in an arc of 60 degree(s). When the inner surface of the hole is free, surface acoustic waves on the inner surface are alternate choices. For the case when all these surfaces are in tight contact with other parts, hence unavailable for mounting transducers, a particular type of Lamb wave mode is presented.

Ultra-low contact resistance in graphene devices at the Dirac point

NASA Astrophysics Data System (ADS)

Anzi, Luca; Mansouri, Aida; Pedrinazzi, Paolo; Guerriero, Erica; Fiocco, Marco; Pesquera, Amaia; Centeno, Alba; Zurutuza, Amaia; Behnam, Ashkan; Carrion, Enrique A.; Pop, Eric; Sordan, Roman

2018-04-01

Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23 Ω \\cdot μ m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200 Ω \\cdot μ m was obtained under such conditions). The ‘holey’ Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m-1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.

Social contact patterns can buffer costs of forgetting in the evolution of cooperation.

PubMed

Stevens, Jeffrey R; Woike, Jan K; Schooler, Lael J; Lindner, Stefan; Pachur, Thorsten

2018-06-13

Analyses of the evolution of cooperation often rely on two simplifying assumptions: (i) individuals interact equally frequently with all social network members and (ii) they accurately remember each partner's past cooperation or defection. Here, we examine how more realistic, skewed patterns of contact-in which individuals interact primarily with only a subset of their network's members-influence cooperation. In addition, we test whether skewed contact patterns can counteract the decrease in cooperation caused by memory errors (i.e. forgetting). Finally, we compare two types of memory error that vary in whether forgotten interactions are replaced with random actions or with actions from previous encounters. We use evolutionary simulations of repeated prisoner's dilemma games that vary agents' contact patterns, forgetting rates and types of memory error. We find that highly skewed contact patterns foster cooperation and also buffer the detrimental effects of forgetting. The type of memory error used also influences cooperation rates. Our findings reveal previously neglected but important roles of contact pattern, type of memory error and the interaction of contact pattern and memory on cooperation. Although cognitive limitations may constrain the evolution of cooperation, social contact patterns can counteract some of these constraints. © 2018 The Author(s).

On the pattern of black hole information release

NASA Astrophysics Data System (ADS)

Park, I. Y.; James, F.

2014-03-01

We propose a step towards a resolution to black hole information paradox by analyzing scattering amplitudes of a complex scalar field around a Schwarzschild black hole. The scattering cross-section reveals much information on the incoming state but exhibits flux loss at the same time. The flux loss should be temporary, and indicate mass growth of the black hole. The black hole should Hawking-radiate subsequently, thereby, compensating for the flux loss. By examining the purity issue, we comment on the possibility that information bleaching may be the key to the paradox.

Manufacturability improvements in EUV resist processing toward NXE:3300 processing

NASA Astrophysics Data System (ADS)

Kuwahara, Yuhei; Matsunaga, Koichi; Shimoaoki, Takeshi; Kawakami, Shinichiro; Nafus, Kathleen; Foubert, Philippe; Goethals, Anne-Marie; Shimura, Satoru

2014-03-01

As the design rule of semiconductor process gets finer, extreme ultraviolet lithography (EUVL) technology is aggressively studied as a process for 22nm half pitch and beyond. At present, the studies for EUV focus on manufacturability. It requires fine resolution, uniform, smooth patterns and low defectivity, not only after lithography but also after the etch process. In the first half of 2013, a CLEAN TRACKTM LITHIUS ProTMZ-EUV was installed at imec for POR development in preparation of the ASML NXE:3300. This next generation coating/developing system is equipped with state of the art defect reduction technology. This tool with advanced functions can achieve low defect levels. This paper reports on the progress towards manufacturing defectivity levels and latest optimizations towards the NXE:3300 POR for both lines/spaces and contact holes at imec.

Au-assisted fabrication of nano-holes on c-plane sapphire via thermal treatment guided by Au nanoparticles as catalysts

NASA Astrophysics Data System (ADS)

Sui, Mao; Pandey, Puran; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar; Lee, Jihoon

2017-01-01

Nanoscale patterning of sapphires is a challenging task due to the high mechanical strength, chemical stability as well as thermal durability. In this paper, we demonstrate a gold droplet assisted approach of nano-hole fabrication on c-plane sapphire via a thermal treatment. Uniformly distributed nano-holes are fabricated on the sapphire surface guided by dome shaped Au nanoparticles (NPs) as catalysts and the patterning process is discussed based on the disequilibrium of vapor, liquid, solid interface energies at the Au NP/sapphire interface induced by the Au evaporation at high temperature. Followed by the re-equilibration of interface energy, transport of alumina from the beneath of NPs to the sapphire surface can occur along the NP/sapphire interface resulting in the formation of nano-holes. The fabrication of nano-holes using Au NPs as catalysts is a flexible, economical and convenient approach and can find applications in various optoelectronics.

Diversity patterns of microbial eukaryotes mirror those of bacteria in Antarctic cryoconite holes.

PubMed

Sommers, Pacifica; Darcy, John L; Gendron, Eli M S; Stanish, Lee F; Bagshaw, Elizabeth A; Porazinska, Dorota L; Schmidt, Steven K

2018-01-01

Ice-lidded cryoconite holes on glaciers in the Taylor Valley, Antarctica, provide a unique system of natural mesocosms for studying community structure and assembly. We used high-throughput DNA sequencing to characterize both microbial eukaryotic communities and bacterial communities within cryoconite holes across three glaciers to study similarities in their spatial patterns. We expected that the alpha (phylogenetic diversity) and beta (pairwise community dissimilarity) diversity patterns of eukaryotes in cryoconite holes would be related to those of bacteria, and that they would be related to the biogeochemical gradient within the Taylor Valley. We found that eukaryotic alpha and beta diversity were strongly related to those of bacteria across scales ranging from 140 m to 41 km apart. Alpha diversity of both was significantly related to position in the valley and surface area of the cryoconite hole, with pH also significantly correlated with the eukaryotic diversity. Beta diversity for both bacteria and eukaryotes was significantly related to position in the valley, with bacterial beta diversity also related to nitrate. These results are consistent with transport of sediments onto glaciers occurring primarily at local scales relative to the size of the valley, thus creating feedbacks in local chemistry and diversity. © FEMS 2017. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

Pattern drilling exploration: Optimum pattern types and hole spacings when searching for elliptical shaped targets

USGS Publications Warehouse

Drew, L.J.

1979-01-01

In this study the selection of the optimum type of drilling pattern to be used when exploring for elliptical shaped targets is examined. The rhombic pattern is optimal when the targets are known to have a preferred orientation. Situations can also be found where a rectangular pattern is as efficient as the rhombic pattern. A triangular or square drilling pattern should be used when the orientations of the targets are unknown. The way in which the optimum hole spacing varies as a function of (1) the cost of drilling, (2) the value of the targets, (3) the shape of the targets, (4) the target occurrence probabilities was determined for several examples. Bayes' rule was used to show how target occurrence probabilities can be revised within a multistage pattern drilling scheme. ?? 1979 Plenum Publishing Corporation.

Alternative methods to model frictional contact surfaces using NASTRAN

NASA Technical Reports Server (NTRS)

Hoang, Joseph

1992-01-01

Elongated (slotted) holes have been used extensively for the integration of equipment into Spacelab racks. In the past, this type of interface has been modeled assuming that there is not slippage between contact surfaces, or that there is no load transfer in the direction of the slot. Since the contact surfaces are bolted together, the contact friction provides a load path determined by the normal applied force (bolt preload) and the coefficient of friction. Three alternate methods that utilize spring elements, externally applied couples, and stress dependent elements are examined to model the contacted surfaces. Results of these methods are compared with results obtained from methods that use GAP elements and rigid elements.

Solid state carbon nanotube device for controllable trion electroluminescence emission

NASA Astrophysics Data System (ADS)

Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2016-03-01

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07468a

Blob-hole correlation model for edge turbulence and comparisons with NSTX gas puff imaging data

NASA Astrophysics Data System (ADS)

Myra, J. R.; Zweben, S. J.; Russell, D. A.

2018-07-01

Gas puff imaging (GPI) observations made in NSTX (Zweben et al 2017 Phys. Plasmas 24 102509) have revealed two-point spatial correlations of edge and scrape-off layer (SOL) turbulence in the plane perpendicular to the magnetic field. A common feature is the occurrence of dipole-like patterns with significant regions of negative correlation. In this paper, we explore the possibility that these dipole patterns may be due to blob-hole pairs. Statistical methods are applied to determine the two-point spatial correlation that results from a model of blob-hole pair formation. It is shown that the model produces dipole correlation patterns that are qualitatively similar to the GPI data in several respects. Effects of the reference location (confined surfaces or SOL), a superimposed random background, hole velocity and lifetime, and background sheared flows are explored and discussed with respect to experimental observations. Additional analysis of the experimental GPI dataset is performed to further test this blob-hole correlation model. A time delay two-point spatial correlation study did not reveal inward propagation of the negative correlation structures that were postulated to correspond to holes in the data nor did it suggest that the negative correlation structures are due to neutral shadowing. However, tracking of the highest and lowest values (extrema) of the normalized GPI fluctuations shows strong evidence for mean inward propagation of minima and outward propagation of maxima, in qualitative agreement with theoretical expectations. Other properties of the experimentally observed extrema are discussed.

Stellar-mass black holes and ultraluminous x-ray sources.

PubMed

Fender, Rob; Belloni, Tomaso

2012-08-03

We review the likely population, observational properties, and broad implications of stellar-mass black holes and ultraluminous x-ray sources. We focus on the clear empirical rules connecting accretion and outflow that have been established for stellar-mass black holes in binary systems in the past decade and a half. These patterns of behavior are probably the keys that will allow us to understand black hole feedback on the largest scales over cosmological time scales.

Haptic feedback for virtual assembly

NASA Astrophysics Data System (ADS)

Luecke, Greg R.; Zafer, Naci

1998-12-01

Assembly operations require high speed and precision with low cost. The manufacturing industry has recently turned attenuation to the possibility of investigating assembly procedures using graphical display of CAD parts. For these tasks, some sort of feedback to the person is invaluable in providing a real sense of interaction with virtual parts. This research develops the use of a commercial assembly robot as the haptic display in such tasks. For demonstration, a peg-hole insertion task is studied. Kane's Method is employed to derive the dynamics of the peg and the contact motions between the peg and the hole. A handle modeled as a cylindrical peg is attached to the end effector of a PUMA 560 robotic arm. The arm is handle modeled as a cylindrical peg is attached to the end effector of a PUMA 560 robotic arm. The arm is equipped with a six axis force/torque transducer. The use grabs the handle and the user-applied forces are recorded. A 300 MHz Pentium computer is used to simulate the dynamics of the virtual peg and its interactions as it is inserted in the virtual hole. The computed torque control is then employed to exert the full dynamics of the task to the user hand. Visual feedback is also incorporated to help the user in the process of inserting the peg into the hole. Experimental results are presented to show several contact configurations for this virtually simulated task.

Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe2: spin-valley locking, effective mass, and inter-layer coupling

NASA Astrophysics Data System (ADS)

Fallahazad, Babak; Movva, Hema Chandra Prakash; Kim, Kyounghwan; Larentis, Stefano; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K.; Tutuc, Emanuel

We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe2, measured in dual-gated samples with top and bottom hexagonal boron-nitride dielectrics, and using platinum bottom contacts. Thanks to the Pt high work-function combined with the a high hole density induced electrostatically by an applied top gate bias, the contacts remain ohmic down to low (1.5 K) temperatures. The samples display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHS) in high magnetic fields. In both mono and bilayer WSe2, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy consistent with spin-valley locking. The Fourier transform analysis of the SdH oscillations in dual-gated bilayer WSe2 reveal the presence of two subbands, each localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillation amplitude we determine a hole effective mass of 0.45me for both mono and bilayer WSe2. The top and bottom layer densities can be independently tuned using the top and bottom gates, respectively, evincing a weak interlayer coupling. This work has been supported by NRI-SWAN and Intel corporation.

The interaction of moderately strong shock waves with thick perforated walls of low porosity

NASA Technical Reports Server (NTRS)

Grant, D. J.

1972-01-01

A theoretical prediction is given of the flow through thick perforated walls of low porosity resulting from the impingement of a moderately strong traveling shock wave. The model was a flat plate positioned normal to the direction of the flow. Holes bored in the plate parallel to the direction of the flow provided nominal hole length-to-diameter ratios of 10:1 and an axial porosity of 25 percent of the flow channel cross section. The flow field behind the reflected shock wave was assumed to behave as a reservoir producing a quasi-steady duct flow through the model. Rayleigh and Fanno duct flow theoretical computations for each of three possible auxiliary wave patterns that can be associated with the transmitted shock (to satisfy contact surface compatibility) were used to provide bounding solutions as an alternative to the more complex influence coefficients method. Qualitative and quantitative behavior was verified in a 1.5- by 2.0-in. helium shock tube. High speed Schlieren photography, piezoelectric pressure-time histories, and electronic-counter wave speed measurements were used to assess the extent of correlation with the theoretical flow models. Reduced data indicated the adequacy of the bounding theory approach to predict wave phenomena and quantitative response.

IODP Exp 362T: Additional Coring and Remediation in Hole U1473A - Continuing the Journey to the Moho

NASA Astrophysics Data System (ADS)

Blum, P.; Dick, H. J.; MacLeod, C. J.; Expedition 360 Scientists, I.

2016-12-01

IODP Hole U1473A, located at 32°42.362'S, 057°16.688'E in the central part of the Atlantis Bank, SW Indian Ridge, at 710.2 m water depth, was drilled to a depth of 789.7 m below seafloor during Exp. 360 (11/30/15 - 1/30/16) and recovered 469.2 m of gabbroic rocks. Following successful wireline logging, a mechanical bit release retainer sleeve (MBR-RS) appeared to have been lost in the hole, raising question about the feasibility of deepening the hole in the future.. We are here reporting the successful remediation operation carried out 12 - 21 Jul, which left the hole ready for deepening on a future expedition. Hole U1473A is serendipitously located on the scheduled Transit 362T from Cape Town to Colombo (4 Jul - 6 Aug) and had 14 days of redundant time and a nearly full technical contingent on board. This led to a request and approval to use the time to "fish" for the MBR-RS, cement the hole to stabilize fault zones, and recover up to 20 m of core to establish the feasibility for future deep drilling. An initial attempt at taking a temperature log in the hole was terminated at 277 m due an obstruction. Subsequent reaming successfully reached the bottom of the hole and removed all cuttings. To our surprise, deployment of the fishing tool recovered an 18-cm dia., 36-cm long rock core but no MBR-RS. The latter must have fallen to the seafloor unnoticed at the end of Exp. 360. Given the immaculate hole conditions, we went on to recover four additional cores with excellent recovery (86%), deepening the hole to 809.4 m. The new cores from 789.7 to 809.5 m consist mostly of medium to coarse-grained subophitic olivine gabbro with a weak magmatic fabric and irregular contacts between medium and coarse-grained size domains. From 795 - 797 m, a zone of Fe-Ti oxide gabbro results in high magnetic susceptibility (MS) and significant natural gamma radiation (NGR) with sheared contacts and an associated porphyroclastic interval. The interval below 797 m is more isotropic with low MS and no NGR. At 803 m a 40-cm thick Fe-Ti oxide-rich mylonitic band is underlain by a porphyroclastic interval indicating that zones of crystal plastic deformation continue to the bottom of the hole. Two of the fault zones located with Exp. 360 data above 580 m were cemented, leaving a plug from 584-443 m and the hole ready and in good condition to continue the journey to the Moho.

Low cost back contact heterojunction solar cells on thin c-Si wafers. integrating laser and thin film processing for improved manufacturability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

2015-09-08

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Easy Fabrication of Thin Membranes with Through Holes. Application to Protein Patterning

PubMed Central

Arasi, Bakya; Gauthier, Nils; Viasnoff, Virgile

2012-01-01

Since protein patterning on 2D surfaces has emerged as an important tool in cell biology, the development of easy patterning methods has gained importance in biology labs. In this paper we present a simple, rapid and reliable technique to fabricate thin layers of UV curable polymer with through holes. These membranes are as easy to fabricate as microcontact printing stamps and can be readily used for stencil patterning. We show how this microfabrication scheme allows highly reproducible and highly homogeneous protein patterning with micron sized resolution on surfaces as large as 10 cm2. Using these stencils, fragile proteins were patterned without loss of function in a fully hydrated state. We further demonstrate how intricate patterns of multiple proteins can be achieved by stacking the stencil membranes. We termed this approach microserigraphy. PMID:22952944

Poly(3,3‴-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

NASA Astrophysics Data System (ADS)

Zhang, Yuan Yuan; Shi, Yumeng; Chen, Fuming; Mhaisalkar, S. G.; Li, Lain-Jong; Ong, Beng S.; Wu, Yiliang

2007-11-01

A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly(3,3‴-didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

Grazing Incidence Cross-Sectioning of Thin-Film Solar Cells via Cryogenic Focused Ion Beam: A Case Study on CIGSe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sardashti, Kasra; Haight, Richard; Anderson, Ryan

2016-06-22

Cryogenic focused ion beam (Cryo-FIB) milling at near-grazing angles is employed to fabricate cross-sections on thin Cu(In,Ga)Se2 with >8x expansion in thickness. Kelvin probe force microscopy (KPFM) on sloped cross sections showed reduction in grain boundaries potential deeper into the film. Cryo Fib-KPFM enabled the first determination of the electronic structure of the Mo/CIGSe back contact, where a sub 100 nm thick MoSey assists hole extraction due to 45 meV higher work function. This demonstrates that CryoFIB-KPFM combination can reveal new targets of opportunity for improvement in thin-films photovoltaics such as high-work-function contacts to facilitate hole extraction through the backmore » interface of CIGS.« less

Low resistance nonalloyed Ni/Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oh, Min-Suk; Hwang, Dae-Kue; Lim, Jae-Hong

2006-07-24

A specific contact resistance of 8.9x10{sup -5} {omega} cm{sup 2} was obtained for a Ni/Au Ohmic layer on the KrF laser-irradiated p-GaN. It was found that laser irradiation increases the hole concentration from 4.1x10{sup 17} to 9.7x10{sup 17} cm{sup -3} by removing hydrogen atoms from p-GaN layer. The native oxide was also removed as evidenced by the Ga 2p peak shift and the decrease in the intensity of O 1s peak in the x-ray photoelectron spectra. The formation of a low resistance is attributed to the increase in the hole concentration and the removal of native oxide from p-GaN bymore » laser irradiation.« less

Photoelectrochemical molecular comb

DOEpatents

Thundat, Thomas G.; Ferrell, Thomas L.; Brown, Gilbert M.

2006-08-15

A method and apparatus for separating molecules. The apparatus includes a substrate having a surface. A film in contact with the surface defines a substrate/film interface. An electrode electrically connected to the film applies a voltage potential between the electrode and the substrate to form a depletion region in the substrate at the substrate/film interface. A photon energy source having an energy level greater than the potential is directed at the depletion region to form electron-hole pairs in the depletion region. At least one of the electron-hole pairs is separated by the potential into an independent electron and an independent hole having opposite charges and move in opposing directions. One of the electron and hole reach the substrate/film interface to create a photopotential in the film causing charged molecules in the film to move in response to the localized photovoltage.

Data for four geologic test holes in the Sacramento Valley, California

USGS Publications Warehouse

Berkstresser, C.F.; French, J.J.; Schaal, M.E.

1985-01-01

The report provides geological and geophysical data for four of seven test holes drilled as a part of the Central Valley Aquifer Project, which is part of the Regional Aquifer Systems Analysis. The holes were drilled with a rotary well drilling machine to depths of 900 feet in the southwestern part of the Sacramento Valley in Solano and Yolo Counties. Geologic data for each well include lithology, texture, color, character of the contact, sorting, rounding, and cementation, determined from cuttings, cores, and sidewall covers. Fifty cores, 3 feet long, were obtained from each hole, and from eight to fourteen sidewall cores were collected. Geophysical data include a dual-induction log, spherically focused log (SFL), compensated neutron-formation density log, gamma-ray log, and a caliper log. These data are presented in four tables and on four plates. (USGS)

The stress state near Spanish Peaks, colorado determined from a dike pattern

USGS Publications Warehouse

Muller, O.H.; Pollard, D.D.

1977-01-01

The radial pattern of syenite and syenodiorite dikes of the Spanish Peaks region is analysed using theories of elasticity and dike emplacement. The three basic components of Ode??'s model for the dike pattern (a pressurized, circular hole; a rigid, planar boundary; and uniform regional stresses) are adopted, but modified to free the regional stresses from the constraint of being orthogonal to the rigid boundary. Dike areal density, the White Peaks intrusion, the strike of the upturned Mesozoic strata, and the contact between these strata and the intensely folded and faulted Paleozoic rocks are used to brient the rigid boundary along a north-south line. The line of dike terminations locates the rigid boundary about 8 km west of West Peak. The location of a circular plug, Goemmer Butte, is chosen as a point of isotropic stress. A map correlating the location of isotropic stress points with regional stress parameters is derived from the theory and used to determine a regional stress orientation (N82E) and a normalized stress magnitude. The stress trajectory map constructed using these parameters mimics the dike pattern exceptionally well. The model indicates that the regional principal stress difference was less than 0.05 times the driving pressure in the West Peak intrusion. The regional stress difference probably did not exced 5 MN/m2. ?? 1977 Birkha??user Verlag.

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

Tunnel oxide passivated contacts formed by ion implantation for applications in silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reichel, Christian, E-mail: christian.reichel@ise.fraunhofer.de; National Renewable Energy Laboratory; Feldmann, Frank

Passivated contacts (poly-Si/SiO{sub x}/c-Si) doped by shallow ion implantation are an appealing technology for high efficiency silicon solar cells, especially for interdigitated back contact (IBC) solar cells where a masked ion implantation facilitates their fabrication. This paper presents a study on tunnel oxide passivated contacts formed by low-energy ion implantation into amorphous silicon (a-Si) layers and examines the influence of the ion species (P, B, or BF{sub 2}), the ion implantation dose (5 × 10{sup 14 }cm{sup −2} to 1 × 10{sup 16 }cm{sup −2}), and the subsequent high-temperature anneal (800 °C or 900 °C) on the passivation quality and junction characteristics using double-sided contacted silicon solar cells.more » Excellent passivation quality is achieved for n-type passivated contacts by P implantations into either intrinsic (undoped) or in-situ B-doped a-Si layers with implied open-circuit voltages (iV{sub oc}) of 725 and 720 mV, respectively. For p-type passivated contacts, BF{sub 2} implantations into intrinsic a-Si yield well passivated contacts and allow for iV{sub oc} of 690 mV, whereas implanted B gives poor passivation with iV{sub oc} of only 640 mV. While solar cells featuring in-situ B-doped selective hole contacts and selective electron contacts with P implanted into intrinsic a-Si layers achieved V{sub oc} of 690 mV and fill factor (FF) of 79.1%, selective hole contacts realized by BF{sub 2} implantation into intrinsic a-Si suffer from drastically reduced FF which is caused by a non-Ohmic Schottky contact. Finally, implanting P into in-situ B-doped a-Si layers for the purpose of overcompensation (counterdoping) allowed for solar cells with V{sub oc} of 680 mV and FF of 80.4%, providing a simplified and promising fabrication process for IBC solar cells featuring passivated contacts.« less

Photoactivated and patternable charge transport materials and their use in organic light-emitting devices

NASA Astrophysics Data System (ADS)

Liu, Jie; Lewis, Larry N.; Duggal, Anil R.

2007-06-01

Organic light-emitting devices (OLEDs) usually employ at least one organic semiconductor layer that acts as a hole-injection material. The prototypical example is a conjugated polymer such as poly(3,4-ethylenedioxythiophene) heavily p doped with polystyrene sulfonic acid. Here, the authors describe a chemical doping strategy for hole injection material formulation that enables spatial patterning of the material conductivity through optical activation. The strategy utilizes an organic photoacid generator (PAG) dispersed in a polymeric organic semiconductor host. Upon UV irradiation, the PAG decomposes and generates a strong protonic acid that subsequently p dopes the host. The authors demonstrate an OLED made with such a light-activated hole-injection material and show that arbitrary emission patterning can be accomplished. This approach may provide a simple, low cost path toward specialty lighting and signage applications for OLED technology.

Microchannel laminated mass exchanger and method of making

DOEpatents

Martin, Peter M [Kennewick, WA; Bennett, Wendy D [Kennewick, WA; Matson, Dean W [Kennewick, WA; Stewart, Donald C [Richland, WA; Drost, Monte K [Pasco, WA; Wegeng, Robert S [Richland, WA; Perez, Joseph M [Richland, WA; Feng, Xiangdong [West Richland, WA; Liu, Jun [West Richland, WA

2003-03-18

The present invention is a microchannel mass exchanger having a first plurality of inner thin sheets and a second plurality of outer thin sheets. The inner thin sheets each have a solid margin around a circumference, the solid margin defining a slot through the inner thin sheet thickness. The outer thin sheets each have at least two header holes on opposite ends and when sandwiching an inner thin sheet. The outer thin sheets further have a mass exchange medium. The assembly forms a closed flow channel assembly wherein fluid enters through one of the header holes into the slot and exits through another of the header holes after contacting the mass exchange medium.

Microchannel laminated mass exchanger and method of making

DOEpatents

Martin, Peter M.; Bennett, Wendy D.; Matson, Dean W.; Stewart, Donald C.; Drost, Monte K.; Wegeng, Robert S.; Perez, Joseph M.; Feng, Xiangdong; Liu, Jun

2000-01-01

The present invention is a microchannel mass exchanger having a first plurality of inner thin sheets and a second plurality of outer thin sheets. The inner thin sheets each have a solid margin around a circumference, the solid margin defining a slot through the inner thin sheet thickness. The outer thin sheets each have at least two header holes on opposite ends and when sandwiching an inner thin sheet. The outer thin sheets further have a mass exchange medium. The assembly forms a closed flow channel assembly wherein fluid enters through one of the header holes into the slot and exits through another of the header holes after contacting the mass exchange medium.

Microchannel laminated mass exchanger and method of making

DOEpatents

Martin, Peter M [Kennewick, WA; Bennett, Wendy D [Kennewick, WA; Matson, Dean W [Kennewick, WA; Stewart, Donald C [Richland, WA; Drost, Monte K [Pasco, WA; Wegeng, Robert S [Richland, WA; Perez, Joseph M [Richland, WA; Feng, Xiangdong [West Richland, WA; Liu, Jun [West Richland, WA

2002-03-05

The present invention is a microchannel mass exchanger having a first plurality of inner thin sheets and a second plurality of outer thin sheets. The inner thin sheets each have a solid margin around a circumference, the solid margin defining a slot through the inner thin sheet thickness. The outer thin sheets each have at least two header holes on opposite ends and when sandwiching an inner thin sheet. The outer thin sheets further have a mass exchange medium. The assembly forms a closed flow channel assembly wherein fluid enters through one of the header holes into the slot and exits through another of the header holes after contacting the mass exchange medium.

A new approach for direct imaging of Alpha radiation by using Micro Pattern Gas Detectors in SQS mode

NASA Astrophysics Data System (ADS)

Souri, R.; Negarestani, A.; Mahani, M.

2018-03-01

In this study, the design, simulation and construction of three micro pattern gas-detectors, THGEM, with different geometric dimensions are presented. Moreover, their ability of operation in SQS mode to determine the incident rays position without using any conventional imaging system is investigated. In the presence of UV absorbing gas mixtures, the proportional mode of the gas detector operation is followed by SQS mode as soon as the visible light column appears at the ray entrance location. In the method employed, each THGEM hole as an image pixel independent of other holes can operate in SQS mode with emerging a light column. As a consequence, it can be used for alpha beam imaging since the brightness of each hole at a certain voltage is proportional to the number of primary electrons entering the hole.

Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

NASA Astrophysics Data System (ADS)

Mosberg, A. B.; Myklebost, S.; Ren, D.; Weman, H.; Fimland, B. O.; van Helvoort, A. T. J.

2017-09-01

To efficiently evaluate the novel approach of focused ion beam (FIB) direct patterning of substrates for nanowire growth, a reference matrix of hole arrays has been used to study the effect of ion fluence and hole diameter on nanowire growth. Self-catalyzed GaAsSb nanowires were grown using molecular beam epitaxy and studied by scanning electron microscopy (SEM). To ensure an objective analysis, SEM images were analyzed with computer vision to automatically identify nanowires and characterize each array. It is shown that FIB milling parameters can be used to control the nanowire growth. Lower ion fluence and smaller diameter holes result in a higher yield (up to 83%) of single vertical nanowires, while higher fluence and hole diameter exhibit a regime of multiple nanowires. The catalyst size distribution and placement uniformity of vertical nanowires is best for low-value parameter combinations, indicating how to improve the FIB parameters for positioned-controlled nanowire growth.

Hole-Impeded-Doping-Superlattice LWIR Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1991-01-01

Hole-Impeded-Doping-Superlattice (HIDS) InAs devices proposed for use as photoconductive or photovoltaic detectors of radiation in long-wavelength infrared (LWIR) range of 8 to 17 micrometers. Array of HIDS devices fabricated on substrates GaAs or Si. Radiation incident on black surface, metal contacts for picture elements serve as reactors, effectively doubling optical path and thereby increasing absorption of photons. Photoconductive detector offers advantages of high gain and high impedance; photovoltaic detector offers lower noise and better interface to multiplexer readouts.

Social Contacts and Mixing Patterns Relevant to the Spread of Infectious Diseases

PubMed Central

Mossong, Joël; Hens, Niel; Jit, Mark; Beutels, Philippe; Auranen, Kari; Mikolajczyk, Rafael; Massari, Marco; Salmaso, Stefania; Tomba, Gianpaolo Scalia; Wallinga, Jacco; Heijne, Janneke; Sadkowska-Todys, Malgorzata; Rosinska, Magdalena; Edmunds, W. John

2008-01-01

Background Mathematical modelling of infectious diseases transmitted by the respiratory or close-contact route (e.g., pandemic influenza) is increasingly being used to determine the impact of possible interventions. Although mixing patterns are known to be crucial determinants for model outcome, researchers often rely on a priori contact assumptions with little or no empirical basis. We conducted a population-based prospective survey of mixing patterns in eight European countries using a common paper-diary methodology. Methods and Findings 7,290 participants recorded characteristics of 97,904 contacts with different individuals during one day, including age, sex, location, duration, frequency, and occurrence of physical contact. We found that mixing patterns and contact characteristics were remarkably similar across different European countries. Contact patterns were highly assortative with age: schoolchildren and young adults in particular tended to mix with people of the same age. Contacts lasting at least one hour or occurring on a daily basis mostly involved physical contact, while short duration and infrequent contacts tended to be nonphysical. Contacts at home, school, or leisure were more likely to be physical than contacts at the workplace or while travelling. Preliminary modelling indicates that 5- to 19-year-olds are expected to suffer the highest incidence during the initial epidemic phase of an emerging infection transmitted through social contacts measured here when the population is completely susceptible. Conclusions To our knowledge, our study provides the first large-scale quantitative approach to contact patterns relevant for infections transmitted by the respiratory or close-contact route, and the results should lead to improved parameterisation of mathematical models used to design control strategies. PMID:18366252

Blob-hole correlation model for edge turbulence and comparisons with NSTX gas puff imaging data

DOE Office of Scientific and Technical Information (OSTI.GOV)

Myra, J. R.; Zweben, S. J.; Russell, D. A.

We report that gas puff imaging (GPI) observations made in NSTX [Zweben S J, et al., 2017 Phys. Plasmas 24 102509] have revealed two-point spatial correlations of edge and scrape-off layer turbulence in the plane perpendicular to the magnetic field. A common feature is the occurrence of dipole-like patterns with significant regions of negative correlation. In this paper, we explore the possibility that these dipole patterns may be due to blob-hole pairs. Statistical methods are applied to determine the two-point spatial correlation that results from a model of blob-hole pair formation. It is shown that the model produces dipole correlationmore » patterns that are qualitatively similar to the GPI data in several respects. Effects of the reference location (confined surfaces or scrape-off layer), a superimposed random background, hole velocity and lifetime, and background sheared flows are explored and discussed with respect to experimental observations. Additional analysis of the experimental GPI dataset is performed to further test this blob-hole correlation model. A time delay two-point spatial correlation study did not reveal inward propagation of the negative correlation structures that were postulated to correspond to holes in the data nor did it suggest that the negative correlation structures are due to neutral shadowing. However, tracking of the highest and lowest values (extrema) of the normalized GPI fluctuations shows strong evidence for mean inward propagation of minima and outward propagation of maxima, in qualitative agreement with theoretical expectations. Finally, other properties of the experimentally observed extrema are discussed.« less

Blob-hole correlation model for edge turbulence and comparisons with NSTX gas puff imaging data

DOE PAGES

Myra, J. R.; Zweben, S. J.; Russell, D. A.

2018-05-15

We report that gas puff imaging (GPI) observations made in NSTX [Zweben S J, et al., 2017 Phys. Plasmas 24 102509] have revealed two-point spatial correlations of edge and scrape-off layer turbulence in the plane perpendicular to the magnetic field. A common feature is the occurrence of dipole-like patterns with significant regions of negative correlation. In this paper, we explore the possibility that these dipole patterns may be due to blob-hole pairs. Statistical methods are applied to determine the two-point spatial correlation that results from a model of blob-hole pair formation. It is shown that the model produces dipole correlationmore » patterns that are qualitatively similar to the GPI data in several respects. Effects of the reference location (confined surfaces or scrape-off layer), a superimposed random background, hole velocity and lifetime, and background sheared flows are explored and discussed with respect to experimental observations. Additional analysis of the experimental GPI dataset is performed to further test this blob-hole correlation model. A time delay two-point spatial correlation study did not reveal inward propagation of the negative correlation structures that were postulated to correspond to holes in the data nor did it suggest that the negative correlation structures are due to neutral shadowing. However, tracking of the highest and lowest values (extrema) of the normalized GPI fluctuations shows strong evidence for mean inward propagation of minima and outward propagation of maxima, in qualitative agreement with theoretical expectations. Finally, other properties of the experimentally observed extrema are discussed.« less

Accurate characterisation of hole size and location by projected fringe profilometry

NASA Astrophysics Data System (ADS)

Wu, Yuxiang; Dantanarayana, Harshana G.; Yue, Huimin; Huntley, Jonathan M.

2018-06-01

The ability to accurately estimate the location and geometry of holes is often required in the field of quality control and automated assembly. Projected fringe profilometry is a potentially attractive technique on account of being non-contacting, of lower cost, and orders of magnitude faster than the traditional coordinate measuring machine. However, we demonstrate in this paper that fringe projection is susceptible to significant (hundreds of µm) measurement artefacts in the neighbourhood of hole edges, which give rise to errors of a similar magnitude in the estimated hole geometry. A mechanism for the phenomenon is identified based on the finite size of the imaging system’s point spread function and the resulting bias produced near to sample discontinuities in geometry and reflectivity. A mathematical model is proposed, from which a post-processing compensation algorithm is developed to suppress such errors around the holes. The algorithm includes a robust and accurate sub-pixel edge detection method based on a Fourier descriptor of the hole contour. The proposed algorithm was found to reduce significantly the measurement artefacts near the hole edges. As a result, the errors in estimated hole radius were reduced by up to one order of magnitude, to a few tens of µm for hole radii in the range 2–15 mm, compared to those from the uncompensated measurements.

Modified hoop conjecture in expanding spacetimes and primordial black hole production in FRW universe

NASA Astrophysics Data System (ADS)

Saini, Anshul; Stojkovic, Dejan

2018-05-01

According to a variant of the hoop conjecture, if we localize two particles within the Schwarzschild radius corresponding to their center of mass energy, then a black hole will form. Despite a large body of work on the formation of primordial black holes, so far this conjecture has not been generalized to expanding spacetimes. We derive a formula which gives the distance within which two particles must be localized to give a black hole, and which crucially depends on the expansion rate of the background space. In the limit of a very slow expansion, we recover the flat spacetime case. In the opposite limit of the large expansion rate when the inverse Hubble radius is smaller than the Schwarzschild radius of a "would be" black hole, the new critical distance between two particles that can make a black hole becomes equal to the particle horizon, which is just a requirement that the particles are in a causal contact. This behavior also nicely illustrates why the Big Bang singularity is not a black hole. We then use our formula to calculate the number density, energy density and production rate of black holes produced in collisions of particles. We find that though black holes might be numerous at high temperatures, they never dominate over the background radiation below the Planck temperature.

MoS2: a two-dimensional hole-transporting material for high-efficiency, low-cost perovskite solar cells

NASA Astrophysics Data System (ADS)

Kohnehpoushi, Saman; Nazari, Pariya; Abdollahi Nejand, Bahram; Eskandari, Mehdi

2018-05-01

In this work MoS2 thin film was studied as a potential two-dimensional (2D) hole-transporting material for fabrication of low-cost, durable and efficient perovskite solar cells. The thickness of MoS2 was studied as a potential factor in reaching high power conversion efficiency in perovskite solar cells. The thickness of the perovskite layer and the different metal back contacts gave distinct photovoltaic properties to the designed cells. The results show that a single sheet of MoS2 could considerably improve the power conversion efficacy of the device from 10.41% for a hole transport material (HTM)-free device to 20.43% for a device prepared with a 0.67 nm thick MoS2 layer as a HTM. On the back, Ag and Al collected the carriers more efficiently than Au due to the value of their metal contact work function with the TiO2 conduction band. The present work proposes a new architecture for the fabrication of low-cost, durable and efficient perovskite solar cells made from a low-cost and robust inorganic HTM and electron transport material.

MoS2: a two-dimensional hole-transporting material for high-efficiency, low-cost perovskite solar cells.

PubMed

Kohnehpoushi, Saman; Nazari, Pariya; Nejand, Bahram Abdollahi; Eskandari, Mehdi

2018-05-18

In this work MoS 2 thin film was studied as a potential two-dimensional (2D) hole-transporting material for fabrication of low-cost, durable and efficient perovskite solar cells. The thickness of MoS 2 was studied as a potential factor in reaching high power conversion efficiency in perovskite solar cells. The thickness of the perovskite layer and the different metal back contacts gave distinct photovoltaic properties to the designed cells. The results show that a single sheet of MoS 2 could considerably improve the power conversion efficacy of the device from 10.41% for a hole transport material (HTM)-free device to 20.43% for a device prepared with a 0.67 nm thick MoS 2 layer as a HTM. On the back, Ag and Al collected the carriers more efficiently than Au due to the value of their metal contact work function with the TiO 2 conduction band. The present work proposes a new architecture for the fabrication of low-cost, durable and efficient perovskite solar cells made from a low-cost and robust inorganic HTM and electron transport material.

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

PubMed

Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon

2008-10-01

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

Fabrication of plasmonic nanopore by using electron beam irradiation for optical bio-sensor

NASA Astrophysics Data System (ADS)

Choi, Seong Soo; Park, Myoung Jin; Han, Chul Hee; Oh, Seh Joong; Park, Nam Kyou; Park, Doo Jae; Choi, Soo Bong; Kim, Yong-Sang

2017-05-01

The Au nano-hole surrounded by the periodic nano-patterns would provide the enhanced optical intensity. Hence, the nano-hole surrounded with periodic groove patterns can be utilized as single molecule nanobio optical sensor device. In this report, the nano-hole on the electron beam induced membrane surrounded by periodic groove patterns were fabricated by focused ion beam technique (FIB), field emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). Initially, the Au films with three different thickness of 40 nm, 60 nm, and 200 nm were deposited on the SiN film by using an electron beam sputter-deposition technique, followed by removal of the supporting SiN film. The nanopore was formed on the electron beam induced membrane under the FESEM electron beam irradiation. Nanopore formation inside the Au aperture was controlled down to a few nanometer, by electron beam irradiations. The optical intensities from the biomolecules on the surfaces including Au coated pyramid with periodic groove patterns were investigated via surface enhanced Raman spectroscopy (SERS). The fabricated nanopore surrounded by periodic patterns can be utilized as a next generation single molecule bio optical sensor.

Mask-to-wafer alignment system

DOEpatents

Sweatt, William C.; Tichenor, Daniel A.; Haney, Steven J.

2003-11-04

A modified beam splitter that has a hole pattern that is symmetric in one axis and anti-symmetric in the other can be employed in a mask-to-wafer alignment device. The device is particularly suited for rough alignment using visible light. The modified beam splitter transmits and reflects light from a source of electromagnetic radiation and it includes a substrate that has a first surface facing the source of electromagnetic radiation and second surface that is reflective of said electromagnetic radiation. The substrate defines a hole pattern about a central line of the substrate. In operation, an input beam from a camera is directed toward the modified beam splitter and the light from the camera that passes through the holes illuminates the reticle on the wafer. The light beam from the camera also projects an image of a corresponding reticle pattern that is formed on the mask surface of the that is positioned downstream from the camera. Alignment can be accomplished by detecting the radiation that is reflected from the second surface of the modified beam splitter since the reflected radiation contains both the image of the pattern from the mask and a corresponding pattern on the wafer.

Dense pattern multiple pass cells

DOEpatents

Silver, Joel A.; Bomse, David S.

2010-09-21

An optical cell and a method of operating an optical cell comprising employing a first mirror comprising a first hole therein at approximately a center of the first mirror and through which laser light enters the cell, employing a second mirror comprising a second hole therein at approximately a center of the second mirror and through which laser light exits the cell, and forming a Lissajous pattern of spots on the mirrors by repeated reflection of laser light entering the cell.

Study on experimental characterization of carbon fiber reinforced polymer panel using digital image correlation: A sensitivity analysis

NASA Astrophysics Data System (ADS)

Kashfuddoja, Mohammad; Prasath, R. G. R.; Ramji, M.

2014-11-01

In this work, the experimental characterization of polymer-matrix and polymer based carbon fiber reinforced composite laminate by employing a whole field non-contact digital image correlation (DIC) technique is presented. The properties are evaluated based on full field data obtained from DIC measurements by performing a series of tests as per ASTM standards. The evaluated properties are compared with the results obtained from conventional testing and analytical models and they are found to closely match. Further, sensitivity of DIC parameters on material properties is investigated and their optimum value is identified. It is found that the subset size has more influence on material properties as compared to step size and their predicted optimum value for the case of both matrix and composite material is found consistent with each other. The aspect ratio of region of interest (ROI) chosen for correlation should be the same as that of camera resolution aspect ratio for better correlation. Also, an open cutout panel made of the same composite laminate is taken into consideration to demonstrate the sensitivity of DIC parameters on predicting complex strain field surrounding the hole. It is observed that the strain field surrounding the hole is much more sensitive to step size rather than subset size. Lower step size produced highly pixilated strain field, showing sensitivity of local strain at the expense of computational time in addition with random scattered noisy pattern whereas higher step size mitigates the noisy pattern at the expense of losing the details present in data and even alters the natural trend of strain field leading to erroneous maximum strain locations. The subset size variation mainly presents a smoothing effect, eliminating noise from strain field while maintaining the details in the data without altering their natural trend. However, the increase in subset size significantly reduces the strain data at hole edge due to discontinuity in correlation. Also, the DIC results are compared with FEA prediction to ascertain the suitable value of DIC parameters towards better accuracy.

Computing Cosmic Cataclysms

NASA Technical Reports Server (NTRS)

Centrella, Joan M.

2010-01-01

The final merger of two black holes releases a tremendous amount of energy, more than the combined light from all the stars in the visible universe. This energy is emitted in the form of gravitational waves, and observing these sources with gravitational wave detectors requires that we know the pattern or fingerprint of the radiation emitted. Since black hole mergers take place in regions of extreme gravitational fields, we need to solve Einstein's equations of general relativity on a computer in order to calculate these wave patterns. For more than 30 years, scientists have tried to compute these wave patterns. However, their computer codes have been plagued by problems that caused them to crash. This situation has changed dramatically in the past few years, with a series of amazing breakthroughs. This talk will take you on this quest for these gravitational wave patterns, showing how a spacetime is constructed on a computer to build a simulation laboratory for binary black hole mergers. We will focus on the recent advances that are revealing these waveforms, and the dramatic new potential for discoveries that arises when these sources will be observed.

Projecting social contact matrices in 152 countries using contact surveys and demographic data.

PubMed

Prem, Kiesha; Cook, Alex R; Jit, Mark

2017-09-01

Heterogeneities in contact networks have a major effect in determining whether a pathogen can become epidemic or persist at endemic levels. Epidemic models that determine which interventions can successfully prevent an outbreak need to account for social structure and mixing patterns. Contact patterns vary across age and locations (e.g. home, work, and school), and including them as predictors in transmission dynamic models of pathogens that spread socially will improve the models' realism. Data from population-based contact diaries in eight European countries from the POLYMOD study were projected to 144 other countries using a Bayesian hierarchical model that estimated the proclivity of age-and-location-specific contact patterns for the countries, using Markov chain Monte Carlo simulation. Household level data from the Demographic and Health Surveys for nine lower-income countries and socio-demographic factors from several on-line databases for 152 countries were used to quantify similarity of countries to estimate contact patterns in the home, work, school and other locations for countries for which no contact data are available, accounting for demographic structure, household structure where known, and a variety of metrics including workforce participation and school enrolment. Contacts are highly assortative with age across all countries considered, but pronounced regional differences in the age-specific contacts at home were noticeable, with more inter-generational contacts in Asian countries than in other settings. Moreover, there were variations in contact patterns by location, with work-place contacts being least assortative. These variations led to differences in the effect of social distancing measures in an age structured epidemic model. Contacts have an important role in transmission dynamic models that use contact rates to characterize the spread of contact-transmissible diseases. This study provides estimates of mixing patterns for societies for which contact data such as POLYMOD are not yet available.

Vortex via process: analysis and mask fabrication for contact CDs <80 nm

NASA Astrophysics Data System (ADS)

Levenson, Marc D.; Tan, Sze M.; Dai, Grace; Morikawa, Yasutaka; Hayashi, Naoya; Ebihara, Takeaki

2003-06-01

In an optical vortex, the wavefront spirals like a corkscrew, rather than forming planes or spheres. Since any nonzero optical amplitude must have a well-defined phase, the axis of a vortex is always dark. Printed in negative resist at 248nm and NA=0.63, 250nm pitch vortex arrays would produce contact holes with 80nm0.6 can be patterned using a chromeless phase-edge mask composed of rectangles with nominal phases of 0°, 90°, 180° and 270°. Analytic and numerical calculations have been performed to characterize the aerial images projected from such vortex masks using the Kirchhoff-approximation and rigorous EMF methods. Combined with resist simulations, these analyses predict process windows with ~10%Elat and >200nm DOF for 80nm CDs on pitches greater than or equal to 250nm at σ greater than or equal to 0.15. Smaller CDs and pitches are possible with shorter wavelength and larger NA while larger pitches give rise to larger CDs. At pitch >0.8μm, the vortices begin to print independently for σ greater than or equal to 0.3. Such "independent" vortices have a quasi-isofocal dose that gives rise to 100nm contacts with Elat>9% and DOF>500nm at σ=0.3. The extra darkness of the nominal 270° phase step can be accommodated by fine-tuning the etch depth. A reticle fabrication process that achieves the required alignment and vertical wall profiles has been exercised and test masks analyzed. In an actual chip design, unwanted vortices and phase step images would be erased from the resist pattern by exposing the wafer with a second, more conventional trim mask. Vortex via placement is consistent with the coarse-gridded grating design paradigms which would - if widely exercised - lower the cost of the required reticles. Compared to other ways of producing deep sub-wavelength contacts, the vortex via process requires fewer masks and reduces the overlay and process control challenges. A high resolution negative-working resist process is essential, however.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hegedus, Steven S.

An interdigitated back contact (IBC) Si wafer solar cell with deposited a-Si heterojunction (HJ) emitter and contacts is considered the ultimate single junction Si solar cell design. This was confirmed in 2014 by both Panasonic and Sharp Solar producing IBC-HJ cells breaking the previous record Si solar cell efficiency of 25%. But manufacturability at low cost is a concern for the complex IBC-HJ device structure. In this research program, our goals were to addressed the broad industry need for a high-efficiency c-Si cell that overcomes the dominant module cost barriers by 1) developing thin Si wafers synthesized by innovative, kerflessmore » techniques; 2) integrating laser-based processing into most aspects of solar cell fabrication, ensuring high speed and low thermal budgets ; 3) developing an all back contact cell structure compatible with thin wafers using a simplified, low-temperature fabrication process; and 4) designing the contact patterning to enable simplified module assembly. There were a number of significant achievements from this 3 year program. Regarding the front surface, we developed and applied new method to characterize critical interface recombination parameters including interface defect density Dit and hole and electron capture cross-section for use as input for 2D simulation of the IBC cell to guide design and loss analysis. We optimized the antireflection and passivation properties of the front surface texture and a-Si/a-SiN/a-SiC stack depositions to obtain a very low (< 6 mA/cm2) front surface optical losses (reflection and absorption) while maintaining excellent surface passivation (SRV<5 cm/s). We worked with kerfless wafer manufacturers to apply defect-engineering techniques to improve bulk minority-carrier lifetime of thin kerfless wafers by both reducing initial impurities during growth and developing post-growth gettering techniques. This led insights about the kinetics of nickel, chromium, and dislocations in PV-grade silicon and to achieving millisecond lifetimes in kerfless silicon materials. Laser fired contacts to n-Si were developed for the first time using a Al/Sb/Ti metal stack giving contact resistances < 5 mOhm-cm2 when fired through several different dielectric layers. A new 2 step laser+chemical etch isolation technique was developed using a sacrificial top coating which avoids laser damage to Si passivation. Regarding the heterojunction emitter, analysis of front FHJ (1D) and IBC (2D) cells with range of p-layer conditions found that a 2-stage high/low doped p-layer was optimum: the low doped region has lower defects giving higher Voc and the high doped region gave a better contact to the metal. A significant effort was spent studying the patterning process and its contribution to degradation of passivation and reproducibility. Several promising new cleaning, contact and deposition patterning and processing approaches were implemented leading to fabrication of several runs with cells having 19-20% efficiency which were stable over several months. This program resulted in the training and support of 12 graduate students, publication of 21 journal papers and 14 conference papers.« less

Bulk Preparation of Holey Graphene via Controlled Catalytic Oxidation

NASA Technical Reports Server (NTRS)

Connell, John (Inventor); Watson, Kent (Inventor); Ghose, Sayata (Inventor); Lin, Yi (Inventor)

2015-01-01

A scalable method allows preparation of bulk quantities of holey carbon allotropes with holes ranging from a few to over 100 nm in diameter. Carbon oxidation catalyst nanoparticles are first deposited onto a carbon allotrope surface in a facile, controllable, and solvent-free process. The catalyst-loaded carbons are then subjected to thermal treatment in air. The carbons in contact with the carbon oxidation catalyst nanoparticles are selectively oxidized into gaseous byproducts such as CO or CO.sub.2, leaving the surface with holes. The catalyst is then removed via refluxing in diluted nitric acid to obtain the final holey carbon allotropes. The average size of the holes correlates strongly with the size of the catalyst nanoparticles and is controlled by adjusting the catalyst precursor concentration. The temperature and time of the air oxidation step, and the catalyst removal treatment conditions, strongly affect the morphology of the holes.

Effect of organic small-molecule hole injection materials on the performance of inverted organic solar cells

NASA Astrophysics Data System (ADS)

Li, Jie; Zheng, Yifan; Zheng, Ding; Yu, Junsheng

2016-07-01

In this study, the influence of small-molecule organic hole injection materials on the performance of organic solar cells (OSCs) as the hole transport layer (HTL) with an architecture of ITO/ZnO/P3HT:PC71BM/HTL/Ag has been investigated. A significant enhancement on the performance of OSCs from 1.06% to 2.63% is obtained by using N, N‧-bis(1-naphthalenyl)-N, N‧-bis-phenyl-(1, 1‧-biphenyl)-4, 4‧-diamine (NPB) HTL. Through the resistance simulation and space-charge limited current analysis, we found that NPB HTL cannot merely improve the hole mobility of the device but also form the Ohmic contact between the active layer and anode. Besides, when we apply mix HTL by depositing the NPB on the surface of molybdenum oxide, the power conversion efficiency of OSC are able to be further improved to 2.96%.

Macular Hole

MedlinePlus

... Search Search the NEI Website search NEI on Social Media | Search A-Z | en español | Text size S M ... Contact Us A-Z Site Map NEI on Social Media Information in Spanish (Información en español) Website, Social ...

Microhole Tubing Bending Report

DOE Data Explorer

Oglesby, Ken

2012-01-01

A downhole tubing bending study was made and is reported herein. IT contains a report and 2 excel spreadsheets to calculate tubing bending and to estimate contact points of the tubing to the drilled hole wall (creating a new support point).

Germanium- and tellurium-doped GaAs for non-alloyed p-type and n-type ohmic contacts

NASA Astrophysics Data System (ADS)

Park, Joongseo; Barnes, Peter A.; Lovejoy, Michael L.

1995-08-01

Epitaxial ohmic contacts to GaAs were grown by liquid phase epitaxy. Heavily Ge-doped GaAs was grown to prepare ohmic contacts to p-GaAs while Te was used for the n-type contacts. Hall measurements were carried out for the samples grown from melts in which the mole fraction of Ge was varied between 1.55 atomic % and 52.2 atomic %, while the Te mole fractions varied between 0.03% and 0.5%. Specific contact resistance, rc, as low as rcp=2.9×10-6 ohm-cm 2 for Ge doping of p=(Na-Nd)=6.0×1019 holes/cm3 was measured for p-contacts and rcn=9.6×10-5 ohm-cm2 was measured for Te doping of n=(Nd-Na)=8.9×1018 electrons/cm3 for GaAs metallized with non-alloyed contacts of Ti/Al.

Long-range effect of a Zeeman field on the electric current through the helical metal-superconductor interface in an Andreev interferometer

NASA Astrophysics Data System (ADS)

Mal'shukov, A. G.

2018-02-01

It is shown that the spin-orbit and Zeeman interactions result in phase shifts of Andreev-reflected holes propagating at the surface of a topological insulator, or in Rashba spin-orbit-coupled two-dimensional normal metals, which are in contact with an s -wave superconductor. Due to interference of holes reflected through different paths of the Andreev interferometer the electric current through external contacts varies depending on the strength and direction of the Zeeman field. It also depends on mutual orientations of Zeeman fields in different shoulders of the interferometer. Such a nonlocal effect is a result of the long-range coherency caused by the superconducting proximity effect. This current has been calculated within the semiclassical theory for Green's functions in the diffusive regime, by assuming a strong disorder due to elastic scattering of electrons.

Ho:YAG laser arthroscopy of the knee

NASA Astrophysics Data System (ADS)

Sisto, Domenick J.; Blazina, Martin E.; Hirsh, Linda C.

1994-09-01

The HO:YAG laser is a near-contact laser with a capacity to ablate or cut tissues. The ablation function allows the surgeon to remove meniscal tissue, lyse and resect adhesions, melt loose bodies, and dissolve inflamed synovium. The cutting function of the laser is utilized to perform a lateral release or resect torn menisci. The laser can also be utilized to drill holes in Grade IV chondromalacic lesions to initiate a healing response. The laser has been embraced by orthopaedic surgeons because of its shape and versatility. The tip is only 2 mm wide and can be delivered into the tight posterior compartments of the knee with no damaging contact with the articular surfaces. The laser coagulates as it works and bleeding is minimized. The laser can function both as a cutting and ablating tool. The laser can also drill holes into subchondral bone to, hopefully, initiate a healing response.

Use of laser drilling in the manufacture of organic inverter circuits.

PubMed

Iba, Shingo; Kato, Yusaku; Sekitani, Tsuyoshi; Kawaguchi, Hiroshi; Sakurai, Takayasu; Someya, Takao

2006-01-01

Inverter circuits have been made by connecting two high-quality pentacene field-effect transistors. A uniform and pinhole-free 900 nm thick polyimide gate-insulating layer was formed on a flexible polyimide film with gold gate electrodes and partially removed by using a CO2 laser drilling machine to make via holes and contact holes. Subsequent evaporation of the gold layer results in good electrical connection with a gold gate layer underneath the gate-insulating layer. By optimization of the settings of the CO2 laser drilling machine, contact resistance can be reduced to as low as 3 ohms for 180 microm square electrodes. No degradation of the transport properties of the organic transistors was observed after the laser-drilling process. This study demonstrates the feasibility of using the laser drilling process for implementation of organic transistors in integrated circuits on flexible polymer films.

Multicomponent Droplet Evaporation on Chemical Micro-Patterned Surfaces

PubMed Central

He, Minghao; Liao, Dong; Qiu, Huihe

2017-01-01

The evaporation and dynamics of a multicomponent droplet on a heated chemical patterned surface were presented. Comparing to the evaporation process of a multicomponent droplet on a homogenous surface, it is found that the chemical patterned surface can not only enhance evaporation by elongating the contact line, but also change the evaporation process from three regimes for the homogenous surface including constant contact line (CCL) regime, constant contact angle (CCA) regime and mix mode (MM) to two regimes, i.e. constant contact line (CCL) and moving contact line (MCL) regimes. The mechanism of contact line stepwise movement in MCL regimes in the microscopic range is investigated in detail. In addition, an improved local force model on the contact line was employed for analyzing the critical receding contact angles on homogenous and patterned surfaces. The analysis results agree well for both surfaces, and confirm that the transition from CCL to MCL regimes indicated droplet composition changes from multicomponent to monocomponent, providing an important metric to predict and control the dynamic behavior and composition of a multicomponent droplet using a patterned surface. PMID:28157229

Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

2016-08-01

We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

Ultrafast electron and hole transfer dynamics of a solar cell dye containing hole acceptors on mesoporous TiO2 and Al2O3.

PubMed

Scholz, Mirko; Flender, Oliver; Boschloo, Gerrit; Oum, Kawon; Lenzer, Thomas

2017-03-08

The stability of dye cations against recombination with conduction band electrons in mesoporous TiO 2 electrodes is a key property for improving light harvesting in dye-sensitised solar cells. Using ultrafast transient broadband absorption spectroscopy, we monitor efficient intramolecular hole transfer in the solar cell dye E6 having two peripheral triarylamine acceptors. After photoexcitation, two hole transfer mechanisms are identified: a concerted mechanism for electron injection and hole transfer (2.4 ps) and a sequential mechanism with time constants of 3.9 ps and 30 ps. This way the dye retards unwanted recombination with a TiO 2 conduction band electron by quickly moving the hole further away from the surface. Contact of the E6/TiO 2 surface with the solvent acetonitrile has almost no influence on the electron injection and hole transfer kinetics. Fast hole transfer (2.8 ps) is also observed on a "non-injecting" Al 2 O 3 surface generating a radical cation-radical anion species with a lifetime of 530 ps. The findings confirm the good intramolecular hole transfer properties of this dye on both thin films. In contrast, intramolecular hole transfer does not occur in the mid-polar organic solvent methyl acetate. This is confirmed by TDDFT calculations suggesting a polarity-induced reduction of the driving force for hole transfer. In methyl acetate, only the relaxation of the initially photoexcited core chromophore is observed including solvent relaxation processes of the electronically excited state S 1 /ICT.

Reversing an S-kink effect caused by interface degradation in organic solar cells through gold ion implantation in the PEDOT:PSS layer

NASA Astrophysics Data System (ADS)

Brenes-Badilla, D.; Coutinho, D. J.; Amorim, D. R. B.; Faria, R. M.; Salvadori, M. C.

2018-04-01

In this work, we performed a study on the recovery of the photovoltaic performance of an ITO/PEDOT:PSS/P3HT:PCBM/Ca/Al solar cell after the hole transport layer (PEDOT:PSS) had been degraded by contact with the environment. A device that was fully built in an inert environment exhibited a fill factor (FF) of 0.64, while the device whose hole transport layer was exposed to air presented a FF equal to 0.2. In addition, the J-V characteristic curve of the degraded device did not follow the photovoltaic pattern exhibiting the degenerate S shape. However, the elimination of the deleterious effect was achieved by bombarding gold ions on the contaminated surface of PEDOT:PSS by means of the Metal Plasma Immersion Ion Implantation technique. Due to the low energy of the ionic beam of gold, the implanted gold atoms were located at few nanometers off the surface, forming nanometric clusters, that is, gold nanoparticles. Most probably, the degradation of the J-V photovoltaic curve, represented by the S-kink effect, was caused by the appearance of a potential barrier at PEDOT:PSS/P3HT:PCBM interface, which was demolished by the gold nanoparticles that have work function close to HOMO of P3HT. This S-kink effect was also simulated by using an equivalent circuit model constituted by a two-diode circuit, one of which plays the role of the undesirable potential barrier formed at the PEDOT:PSS/P3HT:PCBM interface. Our analysis shows that deposition of gold nanoparticles next to the interface recovers the good hole injection condition from the PEDOT:PSS into the active layer, restoring the fill factor and the device efficiency.

Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

NASA Astrophysics Data System (ADS)

Yang, Che-Wei; Chen, Wei-Chieh; Chou, Chieh; Lin, Hao-Hsiung

2018-02-01

We report on the selective area growth of InAs nanowires on patterned SiO2/Si (1 1 1) nano-holes, prepared by focused helium ion beam technology. We used a single spot mode, in which the focused helium ion beam was fixed on a single point with a He+-ion dosage, ranging from 1.5 pC to 8 pC, to drill the nano-holes. The smallest hole diameter achieved is ∼8 nm. We found that low He+-ion dosage is able to facilitate the nucleation of (1 1 1)B InAs on the highly mismatched Si, leading to the vertical growth of InAs nanowires (NWs). High He-ion dosage, on the contrary, severely damaged Si surface, resulting in tilted and stripe-like NWs. In addition to titled NW grown from (1 1 1)A InAs domain, a new titled growth direction due to defect induced twinning was observed. Cross-sectional TEM images of vertical NWs show mixed wurtizite (WZ) and zincblende (ZB) phases, while WZ phase dominants. The stacking faults resulting from the phase change is proportional to NW diameter, suggesting that the critical diameter of phase turning is larger than 110 nm, the maximum diameter of our NWs. Period of misfit dislocation at the InAs/Si interface of vertical NW is also found larger than the theoretical value when the diameter of heterointerface is smaller than 50 nm, indicating that the small contact area is able to accommodate the large lattice and thermal mismatch between InAs and Si.

Comparison of Contact Patterns Relevant for Transmission of Respiratory Pathogens in Thailand and the Netherlands Using Respondent-Driven Sampling

PubMed Central

Stein, Mart L.; van Steenbergen, Jim E.; Buskens, Vincent; van der Heijden, Peter G. M.; Chanyasanha, Charnchudhi; Tipayamongkholgul, Mathuros; Thorson, Anna E.; Bengtsson, Linus; Lu, Xin; Kretzschmar, Mirjam E. E.

2014-01-01

Understanding infection dynamics of respiratory diseases requires the identification and quantification of behavioural, social and environmental factors that permit the transmission of these infections between humans. Little empirical information is available about contact patterns within real-world social networks, let alone on differences in these contact networks between populations that differ considerably on a socio-cultural level. Here we compared contact network data that were collected in the Netherlands and Thailand using a similar online respondent-driven method. By asking participants to recruit contact persons we studied network links relevant for the transmission of respiratory infections. We studied correlations between recruiter and recruited contacts to investigate mixing patterns in the observed social network components. In both countries, mixing patterns were assortative by demographic variables and random by total numbers of contacts. However, in Thailand participants reported overall more contacts which resulted in higher effective contact rates. Our findings provide new insights on numbers of contacts and mixing patterns in two different populations. These data could be used to improve parameterisation of mathematical models used to design control strategies. Although the spread of infections through populations depends on more factors, found similarities suggest that spread may be similar in the Netherlands and Thailand. PMID:25423343

Calibration of a Modified Andersen Bacterial Aerosol Sampler

PubMed Central

May, K. R.

1964-01-01

A study of the flow regime in the commercial Andersen sampler revealed defects in the sampling of the larger airborne particles. Satisfactory sampling was obtained by redesigning the hole pattern of the top stages and adding one more stage to extend the range of the instrument. A new, rational hole pattern is suggested for the lower stages. With both patterns a special colony-counting mask can be used to facilitate the assay. A calibration of the modified system is presented which enables particle size distribution curves to be drawn from the colony counts. Images FIG. 2 FIG. 3 FIG. 4 FIG. 5 FIG. 6 FIG. 7 FIG. 8 PMID:14106938

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.

PubMed

Barbagini, Francesca; Bengoechea-Encabo, Ana; Albert, Steven; Martinez, Javier; Sanchez García, Miguel Angel; Trampert, Achim; Calleja, Enrique

2011-12-14

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.

Synchronized femtosecond laser pulse switching system based nano-patterning technology

NASA Astrophysics Data System (ADS)

Sohn, Ik-Bu; Choi, Hun-Kook; Yoo, Dongyoon; Noh, Young-Chul; Sung, Jae-Hee; Lee, Seong-Ku; Ahsan, Md. Shamim; Lee, Ho

2017-07-01

This paper demonstrates the design and development of a synchronized femtosecond laser pulse switching system and its applications in nano-patterning of transparent materials. Due to synchronization, we are able to control the location of each irradiated laser pulse in any kind of substrate. The control over the scanning speed and scanning step of the laser beam enables us to pattern periodic micro/nano-metric holes, voids, and/or lines in various materials. Using the synchronized laser system, we pattern synchronized nano-holes on the surface of and inside various transparent materials including fused silica glass and polymethyl methacrylate to replicate any image or pattern on the surface of or inside (transparent) materials. We also investigate the application areas of the proposed synchronized femtosecond laser pulse switching system in a diverse field of science and technology, especially in optical memory, color marking, and synchronized micro/nano-scale patterning of materials.

Deployment and evaluation of a dual-sensor autofocusing method for on-machine measurement of patterns of small holes on freeform surfaces.

PubMed

Chen, Xiaomei; Longstaff, Andrew; Fletcher, Simon; Myers, Alan

2014-04-01

This paper presents and evaluates an active dual-sensor autofocusing system that combines an optical vision sensor and a tactile probe for autofocusing on arrays of small holes on freeform surfaces. The system has been tested on a two-axis test rig and then integrated onto a three-axis computer numerical control (CNC) milling machine, where the aim is to rapidly and controllably measure the hole position errors while the part is still on the machine. The principle of operation is for the tactile probe to locate the nominal positions of holes, and the optical vision sensor follows to focus and capture the images of the holes. The images are then processed to provide hole position measurement. In this paper, the autofocusing deviations are analyzed. First, the deviations caused by the geometric errors of the axes on which the dual-sensor unit is deployed are estimated to be 11 μm when deployed on a test rig and 7 μm on the CNC machine tool. Subsequently, the autofocusing deviations caused by the interaction of the tactile probe, surface, and small hole are mathematically analyzed and evaluated. The deviations are a result of the tactile probe radius, the curvatures at the positions where small holes are drilled on the freeform surface, and the effect of the position error of the hole on focusing. An example case study is provided for the measurement of a pattern of small holes on an elliptical cylinder on the two machines. The absolute sum of the autofocusing deviations is 118 μm on the test rig and 144 μm on the machine tool. This is much less than the 500 μm depth of field of the optical microscope. Therefore, the method is capable of capturing a group of clear images of the small holes on this workpiece for either implementation.

PALS, MIR and UV-vis-NIR spectroscopy studies of pHEMA hydrogel, silicon- and fluoro-containing contact lens materials

NASA Astrophysics Data System (ADS)

Filipecka, Katarzyna; Budaj, Mariusz; Chamerski, Kordian; Miedziński, Rafał; Sitarz, Maciej; Miskowiak, Bogdan; Makowska-Janusik, Małgorzata; Filipecki, Jacek

2017-11-01

Studies on polymeric materials used in contactology for manufacturing of contact lenses are presented in the paper. Different types of brand new contact lenses were investigated: hydrogel, silicone-hydrogel and rigid gas permeable. Positron annihilation lifetime spectroscopy (PALS) was used to characterize geometrical sizes and fraction of the free volume holes in the investigated samples. Measurements reveal significant differences between the materials. Namely differences in size and fraction of free volume were observed. These changes are strongly correlated with oxygen permeability in contact lenses. Middle infrared (MIR) spectroscopy was carried out in order to investigate the internal structure of materials. Furthermore, UV-vis-NIR studies were performed in order to determine the transmittance properties of contact lenses.

Investigation of non-linear contact for a clearance-fit bolt in a graphite/epoxy laminate

NASA Technical Reports Server (NTRS)

Prabhakaran, R.; Naik, R. A.

1986-01-01

Numerous analytical studies have been published for the nonlinear load-contact variations in clearance-fit bolted joints. In these studies, stress distributions have been obtained and failure predictions have been made. However, very little experimental work has been reported regarding the contact or the stresses. This paper describes a fiber-optic technique for measuring the angle of contact in a clearance-fit bolt-loaded hole. Measurements of the contact angle have been made in a quasi-isotropic graphite-epoxy laminate by the optical as well as an electrical technique, and the results have been compared with those obtained from a finite-element analysis. The results from the two experimental techniques show excellent agreement; the finite-element results show some discrepancy, probably due to the interfacial frictions.

Preventing Hantavirus Pulmonary Syndrome (HPS)

MedlinePlus

... into contact with them. Seal up holes and gaps in your home or garage. Place traps in and around your home to decrease rodent infestation. Clean up any easy-to-get food. Recent research results show that many people who became ill ...

Advantage of hole stimulus in rivalry competition.

PubMed

Meng, Qianli; Cui, Ding; Zhou, Ke; Chen, Lin; Ma, Yuanye

2012-01-01

Mounting psychophysical evidence suggests that early visual computations are sensitive to the topological properties of stimuli, such as the determination of whether the object has a hole or not. Previous studies have demonstrated that the hole feature took some advantages during conscious perception. In this study, we investigate whether there exists a privileged processing for hole stimuli during unconscious perception. By applying a continuous flash suppression paradigm, the target was gradually introduced to one eye to compete against a flashed full contrast Mondrian pattern which was presented to the other eye. This method ensured that the target image was suppressed during the initial perceptual period. We compared the initial suppressed duration between the stimuli with and without the hole feature and found that hole stimuli required less time than no-hole stimuli to gain dominance against the identical suppression noise. These results suggest the hole feature could be processed in the absence of awareness, and there exists a privileged detection of hole stimuli during suppressed phase in the interocular rivalry.

Initial Study of Friction Pull Plug Welding

NASA Technical Reports Server (NTRS)

Rich, Brian S.

1999-01-01

Pull plug friction welding is a new process being developed to conveniently eliminate defects from welded plate tank structures. The general idea is to drill a hole of precise, optimized dimensions and weld a plug into it, filling the hole perfectly. A conically-shaped plug is rotated at high angular velocity as it is brought into contact with the plate material in the hole. As the plug is pulled into the hole, friction rapidly raises the temperature to the point at which the plate material flows plastically. After a brief heating phase, the plug rotation is terminated. The plug is then pulled upon with a forging force, solidly welding the plug into the hole in the plate. Three aspects of this process were addressed in this study. The transient temperature distribution was analyzed based on slightly idealized boundary conditions for different plug geometries. Variations in hole geometry and ram speed were considered, and a program was created to calculate volumes of displaced material and empty space, as well as many other relevant dimensions. The relation between the axially applied forging force and the actual forging pressure between the plate and plug surfaces was determined for various configurations.

Flow-induced resonance of screen-covered cavities

NASA Technical Reports Server (NTRS)

Soderman, Paul T.

1990-01-01

An experimental study of screen-covered cavities exposed to airflow tangent to the screen is described. The term screen refers to a thin metal plate perforated with a repetitive pattern of round holes. The purpose was to find the detailed aerodynamic and acoustic mechanisms responsible for screen-covered cavity resonance and to find ways to control the pressure oscillations. Results indicate that strong cavity acoustic resonances are created by screen orifices that shed vortices which couple resonance by choosing hole spacings such that shed vortices do not arrive at a downstream orifice in synchronization with cavity pressure oscillations. The proper hole pattern is effective at all airspeeds. It was also discovered that a reduction of orifice size tended to weaken the screen/cavity interaction regardless of hole pattern, probably because of viscous flow losses at the orifices. The screened cavities that resonated did so at much higher frequencies than the equivalent open cavity. The classical large eddy phenomenon occurs at the relatively small scale of the orifices (the excitation is typically of high frequency). The wind tunnel study was made at airspeeds from 0 to 100m/sec. The 457-mm-long by 1.09-m-high rectangular cavities had length-to-depth ratios greater than one, which is indicative of shallow cavities. The cavity screens were perforated in straight rows and columns with hole diameters ranging from 1.59 to 6.35 mm and with porosities from 2.6 to 19.6 percent.

Biotic interactions at hydrothermal vents: Recruitment inhibition by the mussel Bathymodiolus thermophilus

NASA Astrophysics Data System (ADS)

Lenihan, H. S.; Mills, S. W.; Mullineaux, L. S.; Peterson, C. H.; Fisher, C. R.; Micheli, F.

2008-12-01

The structure and dynamics of marine communities are regulated in part by variation in recruitment. As in other ecosystems, recruitment at deep-sea hydrothermal vents is controlled by the interplay of propagule supply and behavior, gradients in physical-chemical conditions, and biotic interactions during pre- and post-settlement periods. Recent research along the East Pacific Rise indicates that inhibition of recently settled larvae by mobile predators (mainly limpets) influences patterns of recruitment and subsequent community succession. We conducted a manipulative experiment at the same sites (˜2510 m water depth) to test whether high-density assemblages of the mussel Bathymodiolus thermophilus also inhibit recruitment. In a preliminary study, recruitment of vent invertebrates within the faunal zone dominated by B. thermophilus was strikingly different at two sites, East Wall and Worm Hole. East Wall had high densities of mussels but very low total recruitment. In contrast, Worm Hole had few mussels but high recruitment. Using the submersible Alvin, we transplanted a large number of mussels from East Wall to Worm Hole and quantified recruitment on basalt blocks placed in three treatments: (1) naturally high densities of mussels at East Wall; (2) naturally low densities of mussels at Worm Hole; and (3) high densities of transplanted mussels at Worm Hole. After 11 months, a total of 24 taxa had recruited to the basalt blocks. Recruitment was 44-60% lower in the transplanted high-density mussel patch at Worm Hole and the natural high-density patch at East Wall than within the natural low-density patch at Worm Hole. Biotic processes that may have caused the pattern of recruitment observed included predation of larvae via water filtration by mussels, larval avoidance of superior competitors, interference competition, and enhanced predation by species within the mussel-bed community. Our results indicate that biotic interactions affecting recruitment must be understood to explain patterns of invertebrate community organization and dynamics at hydrothermal vents.

Social contact patterns relevant to the spread of respiratory infectious diseases in Hong Kong.

PubMed

Leung, Kathy; Jit, Mark; Lau, Eric H Y; Wu, Joseph T

2017-08-11

The spread of many respiratory infections is determined by contact patterns between infectious and susceptible individuals in the population. There are no published data for quantifying social contact patterns relevant to the spread of respiratory infectious diseases in Hong Kong which is a hotspot for emerging infectious diseases due to its high population density and connectivity in the air transportation network. We adopted a commonly used diary-based design to conduct a social contact survey in Hong Kong in 2015/16 using both paper and online questionnaires. Participants using paper questionnaires reported more contacts and longer contact duration than those using online questionnaires. Participants reported 13 person-hours of contact and 8 contacts per day on average, which decreased over age but increased with household size, years of education and income level. Prolonged and frequent contacts, and contacts at home, school and work were more likely to involve physical contacts. Strong age-assortativity was observed in all age groups. We evaluated the characteristics of social contact patterns relevant to the spread of respiratory infectious diseases in Hong Kong. Our findings could help to improve the design of future social contact surveys, parameterize transmission models of respiratory infectious diseases, and inform intervention strategies based on model outputs.

Influence of Electron–Holes on DNA Sequence-Specific Mutation Rates

PubMed Central

Suárez-Villagrán, Martha Y; Azevedo, Ricardo B R; Miller, John H

2018-01-01

Abstract Biases in mutation rate can influence molecular evolution, yielding rates of evolution that vary widely in different parts of the genome and even among neighboring nucleotides. Here, we explore one possible mechanism of influence on sequence-specific mutation rates, the electron–hole, which can localize and potentially trigger a replication mismatch. A hole is a mobile site of positive charge created during one-electron oxidation by, for example, radiation, contact with a mutagenic agent, or oxidative stress. Its quantum wavelike properties cause it to localize at various sites with probabilities that vary widely, by orders of magnitude, and depend strongly on the local sequence. We find significant correlations between hole probabilities and mutation rates within base triplets, observed in published mutation accumulation experiments on four species of bacteria. We have also computed hole probability spectra for hypervariable segment I of the human mtDNA control region, which contains several mutational hotspots, and for heptanucleotides in noncoding regions of the human genome, whose polymorphism levels have recently been reported. We observe significant correlations between hole probabilities, and context-specific mutation and substitution rates. The correlation with hole probability cannot be explained entirely by CpG methylation in the heptanucleotide data. Peaks in hole probability tend to coincide with mutational hotspots, even in mtDNA where CpG methylation is rare. Our results suggest that hole-enhanced mutational mechanisms, such as oxidation-stabilized tautomerization and base deamination, contribute to molecular evolution. PMID:29617801

Who's holding the baby? A prospective diary study of the contact patterns of mothers with an infant.

PubMed

Campbell, Patricia Therese; McVernon, Jodie; Shrestha, Niraj; Nathan, Paula M; Geard, Nicholas

2017-09-20

Models of infectious disease are increasingly utilising empirical contact data to quantify the number of potentially infectious contacts between age groups. While a growing body of data is being collected on contact patterns across many populations, less attention has been paid to the social contacts of young infants. We collected information on the social contacts of primary carers of young infants and investigated their potential for use as a proxy for contacts made by their infant. We recruited primary carers of infants under one year of age residing in two geographically, demographically and socioeconomically distinct local government areas of Melbourne, Australia - Boroondara and Hume - including a sub-group of Turkish-speaking participants. Participants recorded their own contacts in a paper diary and noted whether their infant was present or absent. Information collected included times at an address; description of location; and details on people contacted at the location. Descriptive summary measures and distributions of contacts by location type, intensity, day of contact and by age are reported. Of the 226 participants recruited, 220 completed diaries were returned. Participant contact patterns were similar across all groups, with respect to the types of locations, intensity and day of contact, with some variation in the number of unique daily contacts. The infant was present at around 85% of locations at which the primary carer contacted other individuals. The majority of contacts occurring when the infant was present were in Own Home (32%), Retail and Hospitality (18%) and Transport (18%) settings. The mean daily number of unique contacts by infants was estimated as 9.1, 8.7 and 6.5 in Boroondara, Hume (English) and Hume (Turkish), respectively, with a similar age distribution across each of our surveyed groups. Our demonstration that contact patterns of mothers with infants are reasonably robust to socioeconomic and cultural differences is a step forward in modelling infectious disease transmission. With infants spending most of their time in the company of their mother, contact patterns of mothers are a useful proxy measure of infant contact patterns. The age distribution of contacts made by infants estimated in this study may be used to supplement population-wide contact information commonly used in infectious disease transmission models.

Geologic Map and Cross Sections of the McGinness Hills Geothermal Area - GIS Data

DOE Data Explorer

Faulds, James E.

2013-12-31

Geologic map data in shapefile format that includes faults, unit contacts, unit polygons, attitudes of strata and faults, and surficial geothermal features. 5 cross‐sections in Adobe Illustrator format. Comprehensive catalogue of drill‐hole data in spreadsheet, shapefile, and Geosoft database formats. Includes XYZ locations of well heads, year drilled, type of well, operator, total depths, well path data (deviations), lithology logs, and temperature data. 3D model constructed with EarthVision using geologic map data, cross‐sections, drill‐hole data, and geophysics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damtie, Fikeraddis A., E-mail: Fikeraddis.Damtie@teorfys.lu.se; Wacker, Andreas, E-mail: Andreas.Wacker@fysik.lu.se; Karki, Khadga J., E-mail: Khadga.Karki@chemphys.lu.se

Multiple exciton generation (MEG) is a process in which more than one electron hole pair is generated per absorbed photon. It allows us to increase the efficiency of solar energy harvesting. Experimental studies have shown the multiple exciton generation yield of 1.2 in isolated colloidal quantum dots. However real photoelectric devices require the extraction of electron hole pairs to electric contacts. We provide a systematic study of the corresponding quantum coherent processes including extraction and injection and show that a proper design of extraction and injection rates enhances the yield significantly up to values around 1.6.

Associating sex-biased and seasonal behaviour with contact patterns and transmission risk in Gopherus agassizii

USGS Publications Warehouse

Aiello, Christina M.; Esque, Todd; Nussear, K. E.; Emblidge, P. G.; Hudson, P. J.

2018-01-01

Interactions between wildlife hosts act as transmission routes for directly transmitted pathogens and vary in ways that affect transmission efficiency. Identifying drivers of contact variation can allow both contact inference and estimation of transmission dynamics despite limited data. In desert tortoises, mating strategy, burrow use and seasonal change influence numerous behaviours and likely shape contact patterns. In this study, we ask to what extent tortoise contact behaviour varies between sexes and seasons, and whether space or burrow-use data can be used to infer contact characteristics consistent with those recorded by proximity loggers. We identified sex and season-biased contact behaviour in both wild and captive populations indicative of female-female avoidance and seasonal male mate-seeking behaviour. Space and burrow-use patterns were informative, but did not always predict the extent of sex or seasonal biases on contact. We discuss the implications these findings have for transmission patterns and disease mitigation in tortoise populations.

Heat sinking for printed circuitry

DOEpatents

Wilson, S.K.; Richardson, G.; Pinkerton, A.L.

1984-09-11

A flat pak or other solid-state device mounted on a printed circuit board directly over a hole extends therethrough so that the bottom of the pak or device extends beyond the bottom of the circuit board. A heat sink disposed beneath the circuit board contacts the bottom of the pak or device and provides direct heat sinking thereto. Pressure may be applied to the top of the pak or device to assure good mechanical and thermal contact with the heat sink.

Search for new physics with dijet angular distributions in proton-proton collisions at √{s}=13 TeV

NASA Astrophysics Data System (ADS)

Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Asilar, E.; Bergauer, T.; Brandstetter, J.; Brondolin, E.; Dragicevic, M.; Erö, J.; Flechl, M.; Friedl, M.; Frühwirth, R.; Ghete, V. M.; Hartl, C.; Hörmann, N.; Hrubec, J.; Jeitler, M.; König, A.; Krätschmer, I.; Liko, D.; Matsushita, T.; Mikulec, I.; Rabady, D.; Rad, N.; Rahbaran, B.; Rohringer, H.; Schieck, J.; Strauss, J.; Waltenberger, W.; Wulz, C.-E.; Dvornikov, O.; Makarenko, V.; Mossolov, V.; Suarez Gonzalez, J.; Zykunov, V.; Shumeiko, N.; Alderweireldt, S.; De Wolf, E. 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B.; Lethuillier, M.; Mirabito, L.; Pequegnot, A. L.; Perries, S.; Popov, A.; Sabes, D.; Sordini, V.; Vander Donckt, M.; Verdier, P.; Viret, S.; Toriashvili, T.; Tsamalaidze, Z.; Autermann, C.; Beranek, S.; Feld, L.; Kiesel, M. K.; Klein, K.; Lipinski, M.; Preuten, M.; Schomakers, C.; Schulz, J.; Verlage, T.; Albert, A.; Brodski, M.; Dietz-Laursonn, E.; Duchardt, D.; Endres, M.; Erdmann, M.; Erdweg, S.; Esch, T.; Fischer, R.; Güth, A.; Hamer, M.; Hebbeker, T.; Heidemann, C.; Hoepfner, K.; Knutzen, S.; Merschmeyer, M.; Meyer, A.; Millet, P.; Mukherjee, S.; Olschewski, M.; Padeken, K.; Pook, T.; Radziej, M.; Reithler, H.; Rieger, M.; Scheuch, F.; Sonnenschein, L.; Teyssier, D.; Thüer, S.; Cherepanov, V.; Flügge, G.; Kargoll, B.; Kress, T.; Künsken, A.; Lingemann, J.; Müller, T.; Nehrkorn, A.; Nowack, A.; Pistone, C.; Pooth, O.; Stahl, A.; Aldaya Martin, M.; Arndt, T.; Asawatangtrakuldee, C.; Beernaert, K.; Behnke, O.; Behrens, U.; Bin Anuar, A. A.; Borras, K.; Campbell, A.; Connor, P.; Contreras-Campana, C.; Costanza, F.; Diez Pardos, C.; Dolinska, G.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Eren, E.; Gallo, E.; Garay Garcia, J.; Geiser, A.; Gizhko, A.; Grados Luyando, J. M.; Grohsjean, A.; Gunnellini, P.; Harb, A.; Hauk, J.; Hempel, M.; Jung, H.; Kalogeropoulos, A.; Karacheban, O.; Kasemann, M.; Keaveney, J.; Kleinwort, C.; Korol, I.; Krücker, D.; Lange, W.; Lelek, A.; Lenz, T.; Leonard, J.; Lipka, K.; Lobanov, A.; Lohmann, W.; Mankel, R.; Melzer-Pellmann, I.-A.; Meyer, A. B.; Mittag, G.; Mnich, J.; Mussgiller, A.; Pitzl, D.; Placakyte, R.; Raspereza, A.; Roland, B.; Sahin, M. Ö.; Saxena, P.; SchoernerSadenius, T.; Spannagel, S.; Stefaniuk, N.; Van Onsem, G. P.; Walsh, R.; Wissing, C.; Blobel, V.; Centis Vignali, M.; Draeger, A. R.; Dreyer, T.; Garutti, E.; Gonzalez, D.; Haller, J.; Hoffmann, M.; Junkes, A.; Klanner, R.; Kogler, R.; Kovalchuk, N.; Lapsien, T.; Marchesini, I.; Marconi, D.; Meyer, M.; Niedziela, M.; Nowatschin, D.; Pantaleo, F.; Peiffer, T.; Perieanu, A.; Poehlsen, J.; Scharf, C.; Schleper, P.; Schmidt, A.; Schumann, S.; Schwandt, J.; Stadie, H.; Steinbrück, G.; Stober, F. M.; Stöver, M.; Tholen, H.; Troendle, D.; Usai, E.; Vanelderen, L.; Vanhoefer, A.; Vormwald, B.; Akbiyik, M.; Barth, C.; Baur, S.; Baus, C.; Berger, J.; Butz, E.; Caspart, R.; Chwalek, T.; Colombo, F.; De Boer, W.; Dierlamm, A.; Fink, S.; Freund, B.; Friese, R.; Giffels, M.; Gilbert, A.; Goldenzweig, P.; Haitz, D.; Hartmann, F.; Heindl, S. M.; Husemann, U.; Katkov, I.; Kudella, S.; Mildner, H.; Mozer, M. U.; Müller, Th.; Plagge, M.; Quast, G.; Rabbertz, K.; Röcker, S.; Roscher, F.; Schröder, M.; Shvetsov, I.; Sieber, G.; Simonis, H. J.; Ulrich, R.; Wayand, S.; Weber, M.; Weiler, T.; Williamson, S.; Wöhrmann, C.; Wolf, R.; Anagnostou, G.; Daskalakis, G.; Geralis, T.; Giakoumopoulou, V. A.; Kyriakis, A.; Loukas, D.; Topsis-Giotis, I.; Kesisoglou, S.; Panagiotou, A.; Saoulidou, N.; Tziaferi, E.; Evangelou, I.; Flouris, G.; Foudas, C.; Kokkas, P.; Loukas, N.; Manthos, N.; Papadopoulos, I.; Paradas, E.; Filipovic, N.; Pasztor, G.; Bencze, G.; Hajdu, C.; Horvath, D.; Sikler, F.; Veszpremi, V.; Vesztergombi, G.; Zsigmond, A. J.; Beni, N.; Czellar, S.; Karancsi, J.; Makovec, A.; Molnar, J.; Szillasi, Z.; Bartók, M.; Raics, P.; Trocsanyi, Z. L.; Ujvari, B.; Komaragiri, J. R.; Bahinipati, S.; Bhowmik, S.; Choudhury, S.; Mal, P.; Mandal, K.; Nayak, A.; Sahoo, D. K.; Sahoo, N.; Swain, S. K.; Bansal, S.; Beri, S. B.; Bhatnagar, V.; Chawla, R.; Bhawandeep, U.; Kalsi, A. K.; Kaur, A.; Kaur, M.; Kumar, R.; Kumari, P.; Mehta, A.; Mittal, M.; Singh, J. B.; Walia, G.; Kumar, Ashok; Bhardwaj, A.; Choudhary, B. C.; Garg, R. B.; Keshri, S.; Malhotra, S.; Naimuddin, M.; Ranjan, K.; Sharma, R.; Sharma, V.; Bhattacharya, R.; Bhattacharya, S.; Chatterjee, K.; Dey, S.; Dutt, S.; Dutta, S.; Ghosh, S.; Majumdar, N.; Modak, A.; Mondal, K.; Mukhopadhyay, S.; Nandan, S.; Purohit, A.; Roy, A.; Roy, D.; Roy Chowdhury, S.; Sarkar, S.; Sharan, M.; Thakur, S.; Behera, P. K.; Chudasama, R.; Dutta, D.; Jha, V.; Kumar, V.; Mohanty, A. K.; Netrakanti, P. K.; Pant, L. M.; Shukla, P.; Topkar, A.; Aziz, T.; Dugad, S.; Kole, G.; Mahakud, B.; Mitra, S.; Mohanty, G. B.; Parida, B.; Sur, N.; Sutar, B.; Banerjee, S.; Dewanjee, R. K.; Ganguly, S.; Guchait, M.; Jain, Sa.; Kumar, S.; Maity, M.; Majumder, G.; Mazumdar, K.; Sarkar, T.; Wickramage, N.; Chauhan, S.; Dube, S.; Hegde, V.; Kapoor, A.; Kothekar, K.; Pandey, S.; Rane, A.; Sharma, S.; Chenarani, S.; Eskandari Tadavani, E.; Etesami, S. M.; Khakzad, M.; Mohammadi Najafabadi, M.; Naseri, M.; Paktinat Mehdiabadi, S.; Rezaei Hosseinabadi, F.; Safarzadeh, B.; Zeinali, M.; Felcini, M.; Grunewald, M.; Abbrescia, M.; Calabria, C.; Caputo, C.; Colaleo, A.; Creanza, D.; Cristella, L.; De Filippis, N.; De Palma, M.; Fiore, L.; Iaselli, G.; Maggi, G.; Maggi, M.; Miniello, G.; My, S.; Nuzzo, S.; Pompili, A.; Pugliese, G.; Radogna, R.; Ranieri, A.; Selvaggi, G.; Sharma, A.; Silvestris, L.; Venditti, R.; Verwilligen, P.; Abbiendi, G.; Battilana, C.; Bonacorsi, D.; Braibant-Giacomelli, S.; Brigliadori, L.; Campanini, R.; Capiluppi, P.; Castro, A.; Cavallo, F. R.; Chhibra, S. S.; Codispoti, G.; Cuffiani, M.; Dallavalle, G. M.; Fabbri, F.; Fanfani, A.; Fasanella, D.; Giacomelli, P.; Grandi, C.; Guiducci, L.; Marcellini, S.; Masetti, G.; Montanari, A.; Navarria, F. L.; Perrotta, A.; Rossi, A. M.; Rovelli, T.; Siroli, G. P.; Tosi, N.; Albergo, S.; Costa, S.; Di Mattia, A.; Giordano, F.; Potenza, R.; Tricomi, A.; Tuve, C.; Barbagli, G.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, P.; Meschini, M.; Paoletti, S.; Russo, L.; Sguazzoni, G.; Strom, D.; Viliani, L.; Benussi, L.; Bianco, S.; Fabbri, F.; Piccolo, D.; Primavera, F.; Calvelli, V.; Ferro, F.; Monge, M. R.; Robutti, E.; Tosi, S.; Brianza, L.; Brivio, F.; Ciriolo, V.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Ghezzi, A.; Govoni, P.; Malberti, M.; Malvezzi, S.; Manzoni, R. A.; Menasce, D.; Moroni, L.; Paganoni, M.; Pedrini, D.; Pigazzini, S.; Ragazzi, S.; Tabarelli de Fatis, T.; Buontempo, S.; Cavallo, N.; De Nardo, G.; Di Guida, S.; Esposito, M.; Fabozzi, F.; Fienga, F.; Iorio, A. O. 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T.; Ligabue, F.; Lomtadze, T.; Martini, L.; Messineo, A.; Palla, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Barone, L.; Cavallari, F.; Cipriani, M.; Del Re, D.; Diemoz, M.; Gelli, S.; Longo, E.; Margaroli, F.; Marzocchi, B.; Meridiani, P.; Organtini, G.; Paramatti, R.; Preiato, F.; Rahatlou, S.; Rovelli, C.; Santanastasio, F.; Amapane, N.; Arcidiacono, R.; Argiro, S.; Arneodo, M.; Bartosik, N.; Bellan, R.; Biino, C.; Cartiglia, N.; Cenna, F.; Costa, M.; Covarelli, R.; Degano, A.; Demaria, N.; Finco, L.; Kiani, B.; Mariotti, C.; Maselli, S.; Migliore, E.; Monaco, V.; Monteil, E.; Monteno, M.; Obertino, M. M.; Pacher, L.; Pastrone, N.; Pelliccioni, M.; Pinna Angioni, G. L.; Ravera, F.; Romero, A.; Ruspa, M.; Sacchi, R.; Shchelina, K.; Sola, V.; Solano, A.; Staiano, A.; Traczyk, P.; Belforte, S.; Casarsa, M.; Cossutti, F.; Della Ricca, G.; Zanetti, A.; Kim, D. H.; Kim, G. N.; Kim, M. S.; Lee, S.; Lee, S. W.; Oh, Y. 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2017-07-01

A search is presented for extra spatial dimensions, quantum black holes, and quark contact interactions in measurements of dijet angular distributions in proton-proton collisions at √{s}=13 TeV. The data were collected with the CMS detector at the LHC and correspond to an integrated luminosity of 2.6 fb-1. The distributions are found to be in agreement with predictions from perturbative quantum chromodynamics that include electroweak corrections. Limits for different contact interaction models are obtained. In a benchmark model, valid to next-to-leading order in QCD and in which only left-handed quarks participate, quark contact interactions are excluded up to a scale of 11.5 and 14.7 TeV for destructive or constructive interference, respectively. The production of quantum black holes is excluded for masses below 7.8 or 5.3 TeV, depending on the model. The lower limits for the scales of virtual graviton exchange in the Arkani-Hamed-Dimopoulos-Dvali model of extra spatial dimensions are in the range 7.9-11.2 TeV, and are the most stringent set of limits available.

Search for new physics with dijet angular distributions in proton-proton collisions at $$\\sqrt{s}$$ = 13 TeV

DOE PAGES

Sirunyan, Albert M.

2017-07-05

A search is presented for extra spatial dimensions, quantum black holes, and quark contact interactions in measurements of dijet angular distributions in proton-proton collisions at √s = 13 TeV. The data were collected with the CMS detector at the LHC and correspond to an integrated luminosity of 2.6 fb –1. The distributions are found to be in agreement with predictions from perturbative quantum chromodynamics that include electroweak corrections. Limits for different contact interaction models are obtained in a benchmark model, valid to next-to-leading order in QCD, in which only left-handed quarks participate, with quark contact interactions excluded up to amore » scale of 11.5 or 14.7 TeV for destructive or constructive interference, respectively. The production of quantum black holes is excluded for masses below 7.8 or 5.3 TeV, depending on the model. Finally, the lower limits for the scales of virtual graviton exchange in the Arkani-Hamed--Dimopoulos--Dvali model of extra spatial dimensions are in the range 7.9-11.2 TeV, and are the most stringent set of limits available.« less

p{sup +}-doping analysis of laser fired contacts for silicon solar cells by Kelvin probe force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ebser, J., E-mail: Jan.Ebser@uni-konstanz.de; Sommer, D.; Fritz, S.

Local rear contacts for silicon passivated emitter and rear contact solar cells can be established by point-wise treating an Al layer with laser radiation and thereby establishing an electrical contact between Al and Si bulk through the dielectric passivation layer. In this laser fired contacts (LFC) process, Al can establish a few μm thick p{sup +}-doped Si region below the metal/Si interface and forms in this way a local back surface field which reduces carrier recombination at the contacts. In this work, the applicability of Kelvin probe force microscopy (KPFM) to the investigation of LFCs considering the p{sup +}-doping distributionmore » is demonstrated. The method is based on atomic force microscopy and enables the evaluation of the lateral 2D Fermi-level characteristics at sub-micrometer resolution. The distribution of the electrical potential and therefore the local hole concentration in and around the laser fired region can be measured. KPFM is performed on mechanically polished cross-sections of p{sup +}-doped Si regions formed by the LFC process. The sample preparation is of great importance because the KPFM signal is very surface sensitive. Furthermore, the measurement is responsive to sample illumination and the height of the applied voltage between tip and sample. With other measurement techniques like micro-Raman spectroscopy, electrochemical capacitance-voltage, and energy dispersive X-ray analysis, a high local hole concentration in the range of 10{sup 19 }cm{sup −3} is demonstrated in the laser fired region. This provides, in combination with the high spatial resolution of the doping distribution measured by KPFM, a promising approach for microscopic understanding and further optimization of the LFC process.« less

A Search for Black Holes and Neutron Stars in the Kepler Field

NASA Astrophysics Data System (ADS)

Orosz, Jerome; Short, Donald; Welsh, William; Windmiller, Gur; Dabney, David

2018-01-01

Black holes and neutron stars represent the final evolutionary stages of the most massive stars. In addition to their use as probes into the evolution of massive stars, black holes and neutron stars are ideal laboratories to test General Relativity in the strong field limit. The number of neutron stars and black holes in the Milky Way is not precisely known, but there are an estimated one billion neutron stars in the galaxy based on the observed numbers of radio pulsars. The number of black holes is about 100 million, based on the behavior of the Initial Mass Function at high stellar masses.All of the known steller-mass black holes (and a fair number of neutron stars) are in ``X-ray binaries'' that were discovered because of their luminous X-ray emission. The requirement to be in an X-ray-emitting binary places a strong observational bias on the discovery of stellar-mass black holes. Thus the 21 known black hole binaries represent only the very uppermost tip of the population iceberg.We have conducted an optical survey using Kepler data designed to uncover black holes and neutron stars in both ``quiescent'' X-ray binaries and ``pre-contact'' X-ray binaries. We discuss how the search was conducted, including how potentially interesting light curves were classified and the how variability types were identified. Although we did not find any convincing candidate neutron star or black hole systems, we did find a few noteworthy binary systems, including two binaries that contain low-mass stars with unusually low albedos.

Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

PubMed

Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

2017-08-23

We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

Effect of the number and position of nozzle holes on in- and near-nozzle dynamic characteristics of diesel injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moon, Seoksu; Gao, Yuan; Park, Suhan

Despite the fact that all modern diesel engines use multi-hole injectors, single-hole injectors are frequently used to understand the fundamental properties of high-pressure diesel injections due to their axisymmetric design of the injector nozzles. A multi-hole injector accommodates many holes around the nozzle axis to deliver adequate amount of fuel with small orifices. The off-axis arrangement of the multi-hole injectors significantly alters the inter- and near-nozzle flow patterns compared to those of the single-hole injectors. This study compares the transient needle motion and near-nozzle flow characteristics of the single- and multi-hole (3-hole and 6-hole) diesel injectors to understand how themore » difference in hole arrangement and number affects the initial flow development of the diesel injectors. A propagation-based X-ray phase-contrast imaging technique was applied to compare the transient needle motion and near-nozzle flow characteristics of the single- and multi-hole injectors. The comparisons were made by dividing the entire injection process by three sub-stages: opening-transient, quasi-steady and closing-transient. (C) 2015 Elsevier Ltd. All rights reserved.« less

Collisions of unequal mass black holes and the point particle limit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sperhake, Ulrich; CENTRA, Departamento de Fisica, Instituto Superior Tecnico, Universidade Tecnica de Lisboa - UTL, Av. Rovisco Pais 1, 1049 Lisboa; California Institute of Technology, Pasadena, California 91125

Numerical relativity has seen incredible progress in the last years, and is being applied with success to a variety of physical phenomena, from gravitational wave research and relativistic astrophysics to cosmology and high-energy physics. Here we probe the limits of current numerical setups, by studying collisions of unequal mass, nonrotating black holes of mass ratios up to 1 ratio 100 and making contact with a classical calculation in general relativity: the infall of a pointlike particle into a massive black hole. Our results agree well with the predictions coming from linearized calculations of the infall of pointlike particles into nonrotatingmore » black holes. In particular, in the limit that one hole is much smaller than the other, and the infall starts from an infinite initial separation, we recover the point-particle limit. Thus, numerical relativity is able to bridge the gap between fully nonlinear dynamics and linearized approximations, which may have important applications. Finally, we also comment on the 'spurious' radiation content in the initial data and the linearized predictions.« less

Autogenous Metallic Pipe Leak Repair in Potable Water Systems.

PubMed

Tang, Min; Triantafyllidou, Simoni; Edwards, Marc A

2015-07-21

Copper and iron pipes have a remarkable capability for autogenous repair (self-repair) of leaks in potable water systems. Field studies revealed exemplars that metallic pipe leaks caused by nails, rocks, and erosion corrosion autogenously repaired, as confirmed in the laboratory experiments. This work demonstrated that 100% (N = 26) of 150 μm leaks contacting representative bulk potable water in copper pipes sealed autogenously via formation of corrosion precipitates at 20-40 psi, pH 3.0-11.0, and with upward and downward leak orientations. Similar leaks in carbon steel pipes at 20 psi self-repaired at pH 5.5 and 8.5, but two leaks did not self-repair permanently at pH 11.0 suggesting that water chemistry may control the durability of materials that seal the leaks and therefore the permanence of repair. Larger 400 μm holes in copper pipes had much lower (0-33%) success of self-repair at pH 3.0-11.0, whereas all 400 μm holes in carbon steel pipes at 20 psi self-repaired at pH 4.0-11.0. Pressure tests indicated that some of the repairs created at 20-40 psi ambient pressure could withstand more than 100 psi without failure. Autogenous repair has implications for understanding patterns of pipe failures, extending the lifetime of decaying infrastructure, and developing new plumbing materials.

Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ansah-Antwi, KwaDwo Konadu, E-mail: kakadee@gmail.com; Chua, Soo Jin; Department of Electrical and Computer Engineering, National University of Singapore, E4-5-45, 4 Engineering Drive 3, Singapore 117576

2015-11-15

The four nearest Si(111) multifaceted sidewalls were exposed inside an array of 3 μm-wide square holes patterned on an Si(100) substrate, and this patterned Si(100) substrate was used as a substrate for the deposition of a gallium nitride (GaN) epilayer. Subsequently the effect that the growth pressure, the etched-hole profiles, and the etched-hole arrangement had upon the quality of the as-grown GaN was investigated. The coalescence of the as-grown GaN epilayer on the exposed Si(111) facets was observed to be enhanced with reduced growth pressure from 120 to 90 Torr. A larger Si(001) plane area at the bottom of the etched holesmore » resulted in bidirectional GaN domains, which resulted in poor material quality. The bidirectional GaN domains were observed as two sets of six peaks via a high-resolution x-ray diffraction phi scan of the GaN(10-11) reflection. It was also shown that a triangular array of etched holes was more desirable than square arrays of etched holes for the growth high-quality and continuous GaN films.« less

CIRCULAR CAVITY SLOT ANTENNA

DOEpatents

Kerley, P.L.

1959-01-01

A small-size antenna having a doughnut-shaped field pattern and which can act both as an antenna and a resonant circuit is described. The antenna is of the slotted type and comprises a resonant cavity with a center hole. A circular slot is provided in one wall of the cavity concentric with the hole and a radio frequency source is connected across the slot. The pattern and loading of the antenna are adjusted by varying the position and shape of a center element slidably disposed within the hole and projecting from the slotted side of the resonant cavity. The disclosed structure may also be used to propagate the oscillator signal down a transniission line by replacing the center element with one leg of the transmission line in a spaced relation from the walls of the cavity.

Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes

DOEpatents

Kostenbauder, Adnah G.

1988-01-01

A photodetector for detecting signal pulses transmitted in an optical carrier signal relies on the generation of electron-hole pairs and the diffusion of the generated electrons and holes to the electrodes on the surface of the semiconductor detector body for generating photovoltaic pulses. The detector utilizes the interference of optical waves for generating an electron-hole grating within the semiconductor body, and, by establishing an electron-hole pair maximum at one electrode and a minimum at the other electrode, a detectable voltaic pulse is generated across the electrode.

Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes

DOEpatents

Kostenbauder, A.G.

1988-06-28

A photodetector for detecting signal pulses transmitted in an optical carrier signal relies on the generation of electron-hole pairs and the diffusion of the generated electrons and holes to the electrodes on the surface of the semiconductor detector body for generating photovoltaic pulses. The detector utilizes the interference of optical waves for generating an electron-hole grating within the semiconductor body, and, by establishing an electron-hole pair maximum at one electrode and a minimum at the other electrode, a detectable voltaic pulse is generated across the electrode. 4 figs.

Articles which include chevron film cooling holes, and related processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bunker, Ronald Scott; Lacy, Benjamin Paul

An article is described, including an inner surface which can be exposed to a first fluid; an inlet; and an outer surface spaced from the inner surface, which can be exposed to a hotter second fluid. The article further includes at least one row or other pattern of passage holes. Each passage hole includes an inlet bore extending through the substrate from the inlet at the inner surface to a passage hole-exit proximate to the outer surface, with the inlet bore terminating in a chevron outlet adjacent the hole-exit. The chevron outlet includes a pair of wing troughs having amore » common surface region between them. The common surface region includes a valley which is adjacent the hole-exit; and a plateau adjacent the valley. The article can be an airfoil. Related methods for preparing the passage holes are also described.« less

Shadow casted by a Konoplya-Zhidenko rotating non-Kerr black hole

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Mingzhi; Chen, Songbai; Jing, Jiliang, E-mail: wmz9085@126.com, E-mail: csb3752@hunnu.edu.cn, E-mail: jljing@hunnu.edu.cn

We have investigated the shadow of a Konoplya-Zhidenko rotating non-Kerr black hole with an extra deformation parameter. The spacetime structure arising from the deformed parameter affects sharply the black hole shadow. With the increase of the deformation parameter, the size of the shadow of black hole increase and its shape becomes more rounded for arbitrary rotation parameter. The D-shape shadow of black hole emerges only in the case a <2√3/3\\, M with the proper deformation parameter. Especially, the black hole shadow possesses a cusp shape with small eye lashes in the cases with a >M, and the shadow becomes lessmore » cuspidal with the increase of the deformation parameter. Our result show that the presence of the deformation parameter yields a series of significant patterns for the shadow casted by a Konoplya-Zhidenko rotating non-Kerr black hole.« less

Model-assisted template extraction SRAF application to contact holes patterns in high-end flash memory device fabrication

NASA Astrophysics Data System (ADS)

Seoud, Ahmed; Kim, Juhwan; Ma, Yuansheng; Jayaram, Srividya; Hong, Le; Chae, Gyu-Yeol; Lee, Jeong-Woo; Park, Dae-Jin; Yune, Hyoung-Soon; Oh, Se-Young; Park, Chan-Ha

2018-03-01

Sub-resolution assist feature (SRAF) insertion techniques have been effectively used for a long time now to increase process latitude in the lithography patterning process. Rule-based SRAF and model-based SRAF are complementary solutions, and each has its own benefits, depending on the objectives of applications and the criticality of the impact on manufacturing yield, efficiency, and productivity. Rule-based SRAF provides superior geometric output consistency and faster runtime performance, but the associated recipe development time can be of concern. Model-based SRAF provides better coverage for more complicated pattern structures in terms of shapes and sizes, with considerably less time required for recipe development, although consistency and performance may be impacted. In this paper, we introduce a new model-assisted template extraction (MATE) SRAF solution, which employs decision tree learning in a model-based solution to provide the benefits of both rule-based and model-based SRAF insertion approaches. The MATE solution is designed to automate the creation of rules/templates for SRAF insertion, and is based on the SRAF placement predicted by model-based solutions. The MATE SRAF recipe provides optimum lithographic quality in relation to various manufacturing aspects in a very short time, compared to traditional methods of rule optimization. Experiments were done using memory device pattern layouts to compare the MATE solution to existing model-based SRAF and pixelated SRAF approaches, based on lithographic process window quality, runtime performance, and geometric output consistency.

Contact Patterns among High School Students

PubMed Central

Fournet, Julie; Barrat, Alain

2014-01-01

Face-to-face contacts between individuals contribute to shape social networks and play an important role in determining how infectious diseases can spread within a population. It is thus important to obtain accurate and reliable descriptions of human contact patterns occurring in various day-to-day life contexts. Recent technological advances and the development of wearable sensors able to sense proximity patterns have made it possible to gather data giving access to time-varying contact networks of individuals in specific environments. Here we present and analyze two such data sets describing with high temporal resolution the contact patterns of students in a high school. We define contact matrices describing the contact patterns between students of different classes and show the importance of the class structure. We take advantage of the fact that the two data sets were collected in the same setting during several days in two successive years to perform a longitudinal analysis on two very different timescales. We show the high stability of the contact patterns across days and across years: the statistical distributions of numbers and durations of contacts are the same in different periods, and we observe a very high similarity of the contact matrices measured in different days or different years. The rate of change of the contacts of each individual from one day to the next is also similar in different years. We discuss the interest of the present analysis and data sets for various fields, including in social sciences in order to better understand and model human behavior and interactions in different contexts, and in epidemiology in order to inform models describing the spread of infectious diseases and design targeted containment strategies. PMID:25226026

Etch challenges for DSA implementation in CMOS via patterning

NASA Astrophysics Data System (ADS)

Pimenta Barros, P.; Barnola, S.; Gharbi, A.; Argoud, M.; Servin, I.; Tiron, R.; Chevalier, X.; Navarro, C.; Nicolet, C.; Lapeyre, C.; Monget, C.; Martinez, E.

2014-03-01

This paper reports on the etch challenges to overcome for the implementation of PS-b-PMMA block copolymer's Directed Self-Assembly (DSA) in CMOS via patterning level. Our process is based on a graphoepitaxy approach, employing an industrial PS-b-PMMA block copolymer (BCP) from Arkema with a cylindrical morphology. The process consists in the following steps: a) DSA of block copolymers inside guiding patterns, b) PMMA removal, c) brush layer opening and finally d) PS pattern transfer into typical MEOL or BEOL stacks. All results presented here have been performed on the DSA Leti's 300mm pilot line. The first etch challenge to overcome for BCP transfer involves in removing all PMMA selectively to PS block. In our process baseline, an acetic acid treatment is carried out to develop PMMA domains. However, this wet development has shown some limitations in terms of resists compatibility and will not be appropriated for lamellar BCPs. That is why we also investigate the possibility to remove PMMA by only dry etching. In this work the potential of a dry PMMA removal by using CO based chemistries is shown and compared to wet development. The advantages and limitations of each approach are reported. The second crucial step is the etching of brush layer (PS-r-PMMA) through a PS mask. We have optimized this step in order to preserve the PS patterns in terms of CD, holes features and film thickness. Several integrations flow with complex stacks are explored for contact shrinking by DSA. A study of CD uniformity has been addressed to evaluate the capabilities of DSA approach after graphoepitaxy and after etching.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns

PubMed Central

2011-01-01

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials. PMID:22168918

Tongue Palate Contact Patterns of Velar Stops in Normal Adult English Speakers

ERIC Educational Resources Information Center

Liker, Marko; Gibbon, Fiona E.

2008-01-01

This paper provides a more detailed description of normal tongue palate contact patterns for the occlusion phase of velar stops than currently exists. The study used electropalatography (EPG) to record seven normally speaking adults' contact patterns of voiceless velar stops in nine VkV contexts. A variety of EPG indices measured: per cent…

Drilling and blasting parameters in sublevel caving in Sheregesh mine

NASA Astrophysics Data System (ADS)

Eremenko, AA; Filippov, VN; Konurin, AI; Khmelinin, AP; Baryshnikov, DV; Khristolyubov, EA

2018-03-01

The factors that influence geomechanical state of rock mass in Sheregesh Mine are determined. The authors discuss a variant of geotechnology with fan drilling. The drill-hole patterns and drilling-and-blasting parameters are presented. The revealed causes of low-quality fragmentation of rocks include the presence of closed and open fractures at different distances from drill-hole mouths, both in case of rings and fans, as well as the blocking of drill-holes with rocks.

Ink-Jet Printer Forms Solar-Cell Contacts

NASA Technical Reports Server (NTRS)

Alexander, Paul, Jr.; Vest, R. W.; Binford, Don A.; Tweedell, Eric P.

1988-01-01

Contacts formed in controllable patterns with metal-based inks. System forms upper metal contact patterns on silicon photovoltaic cells. Uses metallo-organic ink, decomposes when heated, leaving behind metallic, electrically conductive residue in printed area.

High-work-function molybdenum oxide hole extraction contacts in hybrid organic–inorganic perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulz, Philip; Tiepelt, Jan O.; Christians, Jeffrey A.

2016-11-08

Here, we investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO 3). We find that direct contact between MoO 3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI 3) layer at the interface still negatively impacts device performance.

Efficient and ultraviolet durable planar perovskite solar cells via a ferrocenecarboxylic acid modified nickel oxide hole transport layer.

PubMed

Zhang, Jiankai; Luo, Hui; Xie, Weijia; Lin, Xuanhuai; Hou, Xian; Zhou, Jianping; Huang, Sumei; Ou-Yang, Wei; Sun, Zhuo; Chen, Xiaohong

2018-03-28

Planar perovskite solar cells (PSCs) that use nickel oxide (NiO x ) as a hole transport layer have recently attracted tremendous attention because of their excellent photovoltaic efficiencies and simple fabrication. However, the electrical conductivity of NiO x and the interface contact properties of the NiO x /perovskite layer are always limited for the NiO x layer fabricated at a relatively low annealing temperature. Ferrocenedicarboxylic acid (FDA) was firstly introduced to modify a p-type NiO x hole transport layer in PSCs, which obviously improves the crystallization of the perovskite layer and hole transport and collection abilities and reduces carrier recombination. PSCs with a FDA modified NiO x layer reached a PCE of 18.20%, which is much higher than the PCE (15.13%) of reference PSCs. Furthermore, PSCs with a FDA interfacial modification layer show better UV durability and a hysteresis-free effect and still maintain the original PCE value of 49.8%after being exposed to UV for 24 h. The enhanced performance of the PSCs is attributed to better crystallization of the perovskite layer, the passivation effect of FDA, superior interface contact at the NiO x /perovskite layers and enhancement of the electrical conductivity of the FDA modified NiO x layer. In addition, PSCs with FDA inserted at the interface of the perovskite/PCBM layers can also improve the PCE to 16.62%, indicating that FDA have dual functions to modify p-type and n-type carrier transporting layers.

Microelectromechanical resonator and method for fabrication

DOEpatents

Wittwer, Jonathan W [Albuquerque, NM; Olsson, Roy H [Albuquerque, NM

2009-11-10

A method is disclosed for the robust fabrication of a microelectromechanical (MEM) resonator. In this method, a pattern of holes is formed in the resonator mass with the position, size and number of holes in the pattern being optimized to minimize an uncertainty .DELTA.f in the resonant frequency f.sub.0 of the MEM resonator due to manufacturing process variations (e.g. edge bias). A number of different types of MEM resonators are disclosed which can be formed using this method, including capacitively transduced Lame, wineglass and extensional resonators, and piezoelectric length-extensional resonators.

Microelectromechanical resonator and method for fabrication

DOEpatents

Wittwer, Jonathan W [Albuquerque, NM; Olsson, Roy H [Albuquerque, NM

2010-01-26

A method is disclosed for the robust fabrication of a microelectromechanical (MEM) resonator. In this method, a pattern of holes is formed in the resonator mass with the position, size and number of holes in the pattern being optimized to minimize an uncertainty .DELTA.f in the resonant frequency f.sub.0 of the MEM resonator due to manufacturing process variations (e.g. edge bias). A number of different types of MEM resonators are disclosed which can be formed using this method, including capacitively transduced Lame, wineglass and extensional resonators, and piezoelectric length-extensional resonators.

Single closed contact for 0.18-micron photolithography process

NASA Astrophysics Data System (ADS)

Cheung, Cristina; Phan, Khoi A.; Chiu, Robert J.

2000-06-01

With the rapid advances of deep submicron semiconductor technology, identifying defects is converted into a challenge for different modules in the fabrication of chips. Yield engineers often do bitmap on a memory circuit array (SRAM) to identify the failure bits. This is followed by a wafer stripback to look for visual defects at each deprocessed layer for feedback to the Fab. However, to identify the root cause of a problem, Fab engineers must be able to detect similar defects either on the product wafers in process or some short loop test wafers. In the photolithography process, we recognize that the detection of defects is becoming as important as satisfying the critical dimension (CD) of the device. For a multi-level metallization chemically mechanical polish backend process, it is very difficult to detect missing contacts or via at the masking steps due to metal grain roughness, film color variation and/or previous layer defects. Often, photolithography engineer must depend on Photo Cell Monitor (PCM) and short loop experiments for controlling baseline defects and improvement. In this paper, we discuss the findings on the Poly mask PCM and the Contact mask PCM. We present the comparison between the Poly mask and the Contact mask of the I-line Phase Shifted Via mask and DUV mask process for a 0.18 micron process technology. The correlation and the different type of defects between the Contact PCM and the Poly Mask are discussed. The Contact PCM was found to be more sensitive and correlated to contact failure at sort yield better. We also dedicate to study the root cause of a single closed contact hole in the Contact mask short loop experiment for a 0.18 micron process technology. A single closed contact defect was often caused by the developer process, such as bubbles in the line, resist residue left behind, and the rinse mechanism. We also found surfactant solution helps to improve the surface tension of the wafer for the developer process and this prevents/eliminates a single closed contact hole defects. The applications and effects of using different substrates like SiON, different thicknesses of Oxides, and Poly in the Contact Photo Mask is shown. Finally, some defect troubleshooting techniques and the root cause analysis are also discussed.

The taming of the screw: Or how I learned to stop worrying and love elliptic functions

NASA Astrophysics Data System (ADS)

Matsumoto, Elisabetta A.

2011-12-01

Nonlinear elastic phenomena appear time and again in the world around us. This work considers two separate soft matter systems, instabilities in an elastic membrane perforated by a lattice of circular holes and defect textures in smectic liquid crystals. By studying the set of singularities characterizing each system, not only do the analytics become tractable, we gain intuition and insight into complex structures. Under hydrostatic compression, the holes decorating an elastic sheet undergo a buckling instability and collapse. By modeling each of the buckled holes as a pair of dislocation singularities, linear elasticity theory accurately captures the interactions between holes and predicts the pattern transformation they undergo. The diamond plate pattern generated by a square lattice of holes achieves long ranged order due to the broken symmetry of the underlying lattice. The limited number of two dimensional lattices restricts the classes of patterns that can be produced by a at sheet. By changing the topology of the membrane to a cylinder the types of accessible patterns vastly increases, from a chiral wrapped cylinder to pairs of holes alternating orientations to even more complex structures. Equally spaced layered smectics introduce a plethora of geometric constraints yielding novel textures based upon topological defects. The frustration due to the incompatibility of molecular chirality and layers drives the formation of both the venerable twist-grain-boundary phase and the newly discovered helical nanofilament (HN) phase. The HN phase is a newly found solution of the chiral Landau-de Gennes free energy. Finally, we consider two limiting cases of the achiral Landau-de Gennes free energy, bending energy dominated allows defects in the layers and compression energy dominated enforces equally spaced layers. In order to minimize bending energy, smectic layers assume the morphology of minimal surfaces. Riemann's minimal surface is composed of a nonlinear sum of two oppositely handed screw dislocations and has the morphology of a pore. Likewise, focal conic domains result from enforcing the equal spacing condition. We develop an approach to the study of focal sets in smectics which exploits a hidden Poincare symmetry revealed only by viewing the smectic layers as projections from one-higher dimension.

Innovative Masking of Ferrous Inserts in Magnesium Aerospace Components Prior to Tagnite Anodization (v.1, Unlimited Release)

DTIC Science & Technology

2013-07-01

cadmium plating, and other metals cannot be anodized. If any of these dissimilar metals are in contact with the Tagnite electrolyte during the...commercial masking vendor had to offer. TAG contacted Acme Masking Company, Avon, Indiana , who specializes in developing masking for aluminum...were received from TAG. For the purpose of this discussion, the edge of the panel near a hole is considered a top. Each panel had a cadmium -plated

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Laura; Harvey, Stephen P.; Teeter, Glenn

We demonstrate the potential of X-ray photoelectron spectroscopy (XPS) to characterize new carrier-selective contacts (CSC) for solar cell application. We show that XPS not only provides information about the surface chemical properties of the CSC material, but that operando XPS, i.e. under light bias condition, can also directly measure the photovoltage that develops at the CSC/absorber interface, revealing device relevant information without the need of assembling a full solar cell. We present the application of the technique to molybdenum oxide hole-selective contact films on a crystalline silicon absorber.

X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p-GaN.

PubMed

Jan, J C; Asokan, K; Chiou, J W; Pong, W F; Tseng, P K; Chen, L C; Chen, F R; Lee, J F; Wu, J S; Lin, H J; Chen, C T

2001-03-01

X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface.

PIV measurements in the near wakes of hollow cylinders with holes

NASA Astrophysics Data System (ADS)

Firat, Erhan; Ozkan, Gokturk M.; Akilli, Huseyin

2017-05-01

The wake flows behind fixed, hollow, rigid circular cylinders with two rows of holes connecting the front and rear stagnation lines were investigated using particle image velocimetry (PIV) for various combinations of three hole diameters, d = 0.1 D, 0.15 D, and 0.20 D, six hole-to-hole distances, l = 2 d, 3 d, 4 d, 5 d, 6 d, and 7 d, and ten angles of incidence ( α), from 0° to 45° in steps of 5°, at a Reynolds number of Re = 6,900. Time-averaged velocity distributions, instantaneous and time-averaged vorticity patterns, time-averaged streamline topology, and hot spots of turbulent kinetic energy occurred through the interaction of shear layers from the models were presented to show how the wake flow was modified by the presence of the self-issuing jets with various momentums emanating from the downstream holes. In general, as hole diameter which is directly related to jet momentum increased, the values of time-averaged wake characteristics (length of time-averaged recirculation region, vortex formation length, length of shear layers, and gap between the shear layers) increased. Irrespective to d and l tested, the values of the vortex formation length of the models are greater than that of the cylinder without hole (reference model). That is, vortex formation process was shifted downstream by aid of jets. It was found that time-averaged wake characteristics were very sensitive to α. As α increased, the variation of these characteristics can be modeled by exponential decay functions. The effect of l on the three-dimensional vortex shedding patterns in the near wake of the models was also discussed.

High Efficiency Inverted Planar Perovskite Solar Cells with Solution-Processed NiOx Hole Contact.

PubMed

Yin, Xuewen; Yao, Zhibo; Luo, Qiang; Dai, Xuezeng; Zhou, Yu; Zhang, Ye; Zhou, Yangying; Luo, Songping; Li, Jianbao; Wang, Ning; Lin, Hong

2017-01-25

NiO x is a promising hole-transporting material for perovskite solar cells due to its high hole mobility, good stability, and easy processability. In this work, we employed a simple solution-processed NiO x film as the hole-transporting layer in perovskite solar cells. When the thickness of the perovskite layer increased from 270 to 380 nm, the light absorption and photogenerated carrier density were enhanced and the transporting distance of electron and hole would also increase at the same time, resulting in a large charge transfer resistance and a long hole-extracted process in the device, characterized by the UV-vis, photoluminescence, and electrochemical impedance spectroscopy spectra. Combining both of these factors, an optimal thickness of 334.2 nm was prepared with the perovskite precursor concentration of 1.35 M. Moreover, the optimal device fabrication conditions were further achieved by optimizing the thickness of NiO x hole-transporting layer and PCBM electron selective layer. As a result, the best power conversion efficiency of 15.71% was obtained with a J sc of 20.51 mA·cm -2 , a V oc of 988 mV, and a FF of 77.51% with almost no hysteresis. A stable efficiency of 15.10% was caught at the maximum power point. This work provides a promising route to achieve higher efficiency perovskite solar cells based on NiO or other inorganic hole-transporting materials.

A new electrode design for ambipolar injection in organic semiconductors.

PubMed

Kanagasekaran, Thangavel; Shimotani, Hidekazu; Shimizu, Ryota; Hitosugi, Taro; Tanigaki, Katsumi

2017-10-17

Organic semiconductors have attracted much attention for low-cost, flexible and human-friendly optoelectronics. However, achieving high electron-injection efficiency is difficult from air-stable electrodes and cannot be equivalent to that of holes. Here, we present a novel concept of electrode composed of a bilayer of tetratetracontane (TTC) and polycrystalline organic semiconductors (pc-OSC) covered by a metal layer. Field-effect transistors of single-crystal organic semiconductors with the new electrodes of M/pc-OSC/TTC (M: Ca or Au) show both highly efficient electron and hole injection. Contact resistance for electron injection from Au/pc-OSC/TTC and hole injection from Ca/pc-OSC/TTC are comparable to those for electron injection from Ca and hole injection from Au, respectively. Furthermore, the highest field-effect mobilities of holes (22 cm 2  V -1  s -1 ) and electrons (5.0 cm 2  V -1  s -1 ) are observed in rubrene among field-effect transistors with electrodes so far proposed by employing Ca/pc-OSC/TTC and Au/pc-OSC/TTC electrodes for electron and hole injection, respectively.One of technological challenges building organic electronics is efficient injection of electrons at metal-semiconductor interfaces compared to that of holes. The authors show an air-stable electrode design with induced gap states, which support Fermi level pinning and thus ambipolar carrier injection.

Social mixing in Fiji: Who-eats-with-whom contact patterns and the implications of age and ethnic heterogeneity for disease dynamics in the Pacific Islands.

PubMed

Watson, Conall H; Coriakula, Jeremaia; Ngoc, Dung Tran Thi; Flasche, Stefan; Kucharski, Adam J; Lau, Colleen L; Thieu, Nga Tran Vu; le Polain de Waroux, Olivier; Rawalai, Kitione; Van, Tan Trinh; Taufa, Mere; Baker, Stephen; Nilles, Eric J; Kama, Mike; Edmunds, W John

2017-01-01

Empirical data on contact patterns can inform dynamic models of infectious disease transmission. Such information has not been widely reported from Pacific islands, nor strongly multi-ethnic settings, and few attempts have been made to quantify contact patterns relevant for the spread of gastrointestinal infections. As part of enteric fever investigations, we conducted a cross-sectional survey of the general public in Fiji, finding that within the 9,650 mealtime contacts reported by 1,814 participants, there was strong like-with-like mixing by age and ethnicity, with higher contact rates amongst iTaukei than non-iTaukei Fijians. Extra-domiciliary lunchtime contacts follow these mixing patterns, indicating the overall data do not simply reflect household structures. Inter-ethnic mixing was most common amongst school-age children. Serological responses indicative of recent Salmonella Typhi infection were found to be associated, after adjusting for age, with increased contact rates between meal-sharing iTaukei, with no association observed for other contact groups. Animal ownership and travel within the geographical division were common. These are novel data that identify ethnicity as an important social mixing variable, and use retrospective mealtime contacts as a socially acceptable metric of relevance to enteric, contact and respiratory diseases that can be collected in a single visit to participants. Application of these data to other island settings will enable communicable disease models to incorporate locally relevant mixing patterns in parameterisation.

Social mixing in Fiji: Who-eats-with-whom contact patterns and the implications of age and ethnic heterogeneity for disease dynamics in the Pacific Islands

PubMed Central

Coriakula, Jeremaia; Ngoc, Dung Tran Thi; Flasche, Stefan; Kucharski, Adam J.; Lau, Colleen L.; Thieu, Nga Tran Vu; le Polain de Waroux, Olivier; Rawalai, Kitione; Van, Tan Trinh; Taufa, Mere; Baker, Stephen; Nilles, Eric J.; Kama, Mike; Edmunds, W. John

2017-01-01

Empirical data on contact patterns can inform dynamic models of infectious disease transmission. Such information has not been widely reported from Pacific islands, nor strongly multi-ethnic settings, and few attempts have been made to quantify contact patterns relevant for the spread of gastrointestinal infections. As part of enteric fever investigations, we conducted a cross-sectional survey of the general public in Fiji, finding that within the 9,650 mealtime contacts reported by 1,814 participants, there was strong like-with-like mixing by age and ethnicity, with higher contact rates amongst iTaukei than non-iTaukei Fijians. Extra-domiciliary lunchtime contacts follow these mixing patterns, indicating the overall data do not simply reflect household structures. Inter-ethnic mixing was most common amongst school-age children. Serological responses indicative of recent Salmonella Typhi infection were found to be associated, after adjusting for age, with increased contact rates between meal-sharing iTaukei, with no association observed for other contact groups. Animal ownership and travel within the geographical division were common. These are novel data that identify ethnicity as an important social mixing variable, and use retrospective mealtime contacts as a socially acceptable metric of relevance to enteric, contact and respiratory diseases that can be collected in a single visit to participants. Application of these data to other island settings will enable communicable disease models to incorporate locally relevant mixing patterns in parameterisation. PMID:29211731

Quick connect fastener

NASA Technical Reports Server (NTRS)

Weddendorf, Bruce (Inventor)

1994-01-01

A quick connect fastener and method of use is presented wherein the quick connect fastener is suitable for replacing available bolts and screws, the quick connect fastener being capable of installation by simply pushing a threaded portion of the connector into a member receptacle hole, the inventive apparatus being comprised of an externally threaded fastener having a threaded portion slidably mounted upon a stud or bolt shaft, wherein the externally threaded fastener portion is expandable by a preloaded spring member. The fastener, upon contact with the member receptacle hole, has the capacity of presenting cylindrical threads of a reduced diameter for insertion purposes and once inserted into the receiving threads of the receptacle member hole, are expandable for engagement of the receptacle hole threads forming a quick connect of the fastener and the member to be fastened, the quick connect fastener can be further secured by rotation after insertion, even to the point of locking engagement, the quick connect fastener being disengagable only by reverse rotation of the mated thread engagement.

Electron transport in extended carbon-nanotube/metal contacts: Ab initio based Green function method

NASA Astrophysics Data System (ADS)

Fediai, Artem; Ryndyk, Dmitry A.; Cuniberti, Gianaurelio

2015-04-01

We have developed a new method that is able to predict the electrical properties of the source and drain contacts in realistic carbon nanotube field effect transistors (CNTFETs). It is based on large-scale ab initio calculations combined with a Green function approach. For the first time, both internal and external parts of a realistic CNT-metal contact are taken into account at the ab initio level. We have developed the procedure allowing direct calculation of the self-energy for an extended contact. Within the method, it is possible to calculate the transmission coefficient through a contact of both finite and infinite length; the local density of states can be determined in both free and embedded CNT segments. We found perfect agreement with the experimental data for Pd and Al contacts. We have explained why CNTFETs with Pd electrodes are p -type FETs with ohmic contacts, which can carry current close to the ballistic limit (provided contact length is large enough), whereas in CNT-Al contacts transmission is suppressed to a significant extent, especially for holes.

Insight into the CH3NH3PbI3/C interface in hole-conductor-free mesoscopic perovskite solar cells

NASA Astrophysics Data System (ADS)

Li, Jiangwei; Niu, Guangda; Li, Wenzhe; Cao, Kun; Wang, Mingkui; Wang, Liduo

2016-07-01

Perovskite solar cells (PSCs) with hole-conductor-free mesoscopic architecture have shown superb stability and great potential in practical application. The printable carbon counter electrodes take full responsibility of extracting holes from the active CH3NH3PbI3 absorbers. However, an in depth study of the CH3NH3PbI3/C interface properties, such as the structural formation process and the effect of interfacial conditions on hole extraction, is still lacking. Herein, we present, for the first time, an insight into the spatial confinement induced CH3NH3PbI3/C interface formation by in situ photoluminescence observations during the crystallization process of CH3NH3PbI3. The derived reaction kinetics allows a quantitative description of the perovskite formation process. In addition, we found that the interfacial contact between carbon and perovskite was dominant for hole extraction efficiency and associated with the photovoltaic parameter of short circuit current density (JSC). Consequently, we conducted a solvent vapor assisted process of PbI2 diffusion to carefully control the CH3NH3PbI3/C interface with less unreacted PbI2 barrier. The improvement of interface conditions thereby contributes to a high hole extraction proved by the charge extraction resistance and PL lifetime change, resulting in the increased JSC valve.Perovskite solar cells (PSCs) with hole-conductor-free mesoscopic architecture have shown superb stability and great potential in practical application. The printable carbon counter electrodes take full responsibility of extracting holes from the active CH3NH3PbI3 absorbers. However, an in depth study of the CH3NH3PbI3/C interface properties, such as the structural formation process and the effect of interfacial conditions on hole extraction, is still lacking. Herein, we present, for the first time, an insight into the spatial confinement induced CH3NH3PbI3/C interface formation by in situ photoluminescence observations during the crystallization process of CH3NH3PbI3. The derived reaction kinetics allows a quantitative description of the perovskite formation process. In addition, we found that the interfacial contact between carbon and perovskite was dominant for hole extraction efficiency and associated with the photovoltaic parameter of short circuit current density (JSC). Consequently, we conducted a solvent vapor assisted process of PbI2 diffusion to carefully control the CH3NH3PbI3/C interface with less unreacted PbI2 barrier. The improvement of interface conditions thereby contributes to a high hole extraction proved by the charge extraction resistance and PL lifetime change, resulting in the increased JSC valve. Electronic supplementary information (ESI) available: Fig. S1-S11, Tables S1, S2 and details of the Avrami model for reaction kinetics. See DOI: 10.1039/c6nr03359h

Method of constructing dished ion thruster grids to provide hole array spacing compensation

NASA Technical Reports Server (NTRS)

Banks, B. A. (Inventor)

1976-01-01

The center-to-center spacings of a photoresist pattern for an array of holes applied to a thin metal sheet are increased by uniformly stretching the thin metal sheet in all directions along the plane of the sheet. The uniform stretching is provided by securely clamping the periphery of the sheet and applying an annular force against the face of the sheet, within the periphery of the sheet and around the photoresist pattern. The technique is used in the construction of ion thruster grid units where the outer or downstream grid is subjected to uniform stretching prior to convex molding. The technique provides alignment of the holes of grid pairs so as to direct the ion beamlets in a direction parallel to the axis of the grid unit and thereby provide optimization of the available thrust.

Double sided circuit board and a method for its manufacture

DOEpatents

Lindenmeyer, Carl W.

1989-01-01

Conductance between the sides of a large double sided printed circuit board is provided using a method which eliminates the need for chemical immersion or photographic exposure of the entire large board. A plurality of through-holes are drilled or punched in a substratum according to the desired pattern, conductive laminae are made to adhere to both sides of the substratum covering the holes and the laminae are pressed together and permanently joined within the holes, providing conductive paths.

Double sided circuit board and a method for its manufacture

DOEpatents

Lindenmeyer, C.W.

1988-04-14

Conductance between the sides of a large double sided printed circuit board is provided using a method which eliminates the need for chemical immersion or photographic exposure of the entire large board. A plurality of through-holes are drilled or punched in a substratum according to the desired pattern, conductive laminae are made to adhere to both sides of the substratum covering the holes and the laminae are pressed together and permanently joined within the holes, providing conductive paths. 4 figs.

Double sided circuit board and a method for its manufacture

DOEpatents

Lindenmeyer, Carl W.

1989-07-04

Conductance between the sides of a large double sided printed circuit board is provided using a method which eliminates the need for chemical immersion or photographic exposure of the entire large board. A plurality of through-holes are drilled or punched in a substratum according to the desired pattern, conductive laminae are made to adhere to both sides of the substratum covering the holes and the laminae are pressed together and permanently joined within the holes, providing conductive paths.

Estimating potential infection transmission routes in hospital wards using wearable proximity sensors.

PubMed

Vanhems, Philippe; Barrat, Alain; Cattuto, Ciro; Pinton, Jean-François; Khanafer, Nagham; Régis, Corinne; Kim, Byeul-a; Comte, Brigitte; Voirin, Nicolas

2013-01-01

Contacts between patients, patients and health care workers (HCWs) and among HCWs represent one of the important routes of transmission of hospital-acquired infections (HAI). A detailed description and quantification of contacts in hospitals provides key information for HAIs epidemiology and for the design and validation of control measures. We used wearable sensors to detect close-range interactions ("contacts") between individuals in the geriatric unit of a university hospital. Contact events were measured with a spatial resolution of about 1.5 meters and a temporal resolution of 20 seconds. The study included 46 HCWs and 29 patients and lasted for 4 days and 4 nights. 14,037 contacts were recorded overall, 94.1% of which during daytime. The number and duration of contacts varied between mornings, afternoons and nights, and contact matrices describing the mixing patterns between HCW and patients were built for each time period. Contact patterns were qualitatively similar from one day to the next. 38% of the contacts occurred between pairs of HCWs and 6 HCWs accounted for 42% of all the contacts including at least one patient, suggesting a population of individuals who could potentially act as super-spreaders. Wearable sensors represent a novel tool for the measurement of contact patterns in hospitals. The collected data can provide information on important aspects that impact the spreading patterns of infectious diseases, such as the strong heterogeneity of contact numbers and durations across individuals, the variability in the number of contacts during a day, and the fraction of repeated contacts across days. This variability is however associated with a marked statistical stability of contact and mixing patterns across days. Our results highlight the need for such measurement efforts in order to correctly inform mathematical models of HAIs and use them to inform the design and evaluation of prevention strategies.

Optical properties of micromachined polysilicon reflective surfaces with etching holes

NASA Astrophysics Data System (ADS)

Zou, Jun; Byrne, Colin; Liu, Chang; Brady, David J.

1998-08-01

MUMPS (Multi-User MEMS Process) is receiving increasingly wide use in micro optics. We have investigated the optical properties of the polysilicon reflective surface in a typical MUMPS chip within the visible light spectrum. The effect of etching holes on the reflected laser beam is studied. The reflectivity and diffraction patterns at five different wavelengths have been measured. The optical properties of the polysilicon reflective surface are greatly affected by the surface roughness, the etching holes, as well as the material. The etching holes contribute to diffraction and reduction of reflectivity. This study provides a basis for optimal design of micromachined free-space optical systems.

Exploring Black Hole Accretion in Active Galactic Nuclei with Simbol-X

NASA Astrophysics Data System (ADS)

Goosmann, R. W.; Dovčiak, M.; Mouchet, M.; Czerny, B.; Karas, V.; Gonçalves, A.

2009-05-01

A major goal of the Simbol-X mission is to improve our knowledge about black hole accretion. By opening up the X-ray window above 10 keV with unprecedented sensitivity and resolution we obtain new constraints on the X-ray spectral and variability properties of active galactic nuclei. To interpret the future data, detailed X-ray modeling of the dynamics and radiation processes in the black hole vicinity is required. Relativistic effects must be taken into account, which then allow to constrain the fundamental black hole parameters and the emission pattern of the accretion disk from the spectra that will be obtained with Simbol-X.

Structural and Lithologic Characterization of the SAFOD Pilot Hole and Phase One Main Hole

NASA Astrophysics Data System (ADS)

Barton, D. C.; Bradbury, K.; Solum, J. G.; Evans, J. P.

2005-12-01

Petrological and microstructural analyses of drill cuttings were conducted for the San Andreas Fault Observatory at Depth (SAFOD) Pilot Hole and Main Hole projects. Grain mounts were produced at ~30 m (100 ft) intervals from drill cuttings collected from the Pilot Hole to a depth of 2164 m (7100 ft) and from Phase 1 of the SAFOD main hole to a depth of 3067 m (10062 ft). . Thin-section grain mount analysis included identification of mineral composition, alteration, and deformation within individual grains, measured at .5 mm increments on an equally spaced, 300 point grid pattern. Lithologic features in the Quaternary/Tertiary deposits from 30 - 640 m (100-2100 ft) in the Pilot Hole, and 670 - 792 m (2200 - 2600 ft) in the Phase 1 main hole, include fine-grained, thinly bedded sediments with clasts of fine-grained volcanic groundmass. Preliminary grain mount analysis from 1920 - 3067 m (6300 - 10062) in the Phase 1 main hole, indicates a sedimentary sequence consisting of fine-grained lithic fragments of very fine-grained shale. Deformation mechanisms observed within the cuttings of granitic rocks from 914 - 1860 m (3000 - 6100 ft.) include intracrystalline plasticity and cataclasis. Intracrystalline plastic deformation within quartz and feldspar grains is indicated by undulatory extinction, ribbon grains, chessboard patterns, and deformation twins and lamellae. Cataclastic deformation is characterized by intra- and intergranular microfractures, angular grains, gouge zones, iron-oxide banding, and comminution. Mineral and cataclasite abundances were plotted as a function of weight percent vs. depth. Plots of quartz and feldspar abundances are also correlated with XRD weight percent data from 1160 - 1890 m (3800 - 6200 ft.) in the granitic and granodioritic sequences of the Phase 1 main hole. Regions of the both of the drill holes with cataclasite abundances ranging from 20 - 30 wt% are interpreted as shear zones. Shear zones identified in this study from 1150 - 1420 m (3773 - 4659 ft.) in the Pilot Hole occur in the same location as shear zones recognized by Boness and Zoback (2004) using borehole geophysical data. These shear zones may possibly be correlated to shear zones identified in the Phase I main hole from 1615 - 2012 m (5300 - 6600 ft). If this is the case, it can be explained by steeply dipping subsidiary fault zones, likely associated with the San Andreas Fault system.

Indirect effects of ecosystem engineering combine with consumer behaviour to determine the spatial distribution of herbivory.

PubMed

Griffen, Blaine D; Riley, Megan E; Cannizzo, Zachary J; Feller, Ilka C

2017-10-01

Ecosystem engineers alter environments by creating, modifying or destroying habitats. The indirect impacts of ecosystem engineering on trophic interactions should depend on the combination of the spatial distribution of engineered structures and the foraging behaviour of consumers that use these structures as refuges. In this study, we assessed the indirect effects of ecosystem engineering by a wood-boring beetle in a neotropical mangrove forest system. We identified herbivory patterns in a dwarf mangrove forest on the archipelago of Twin Cays, Belize. Past wood-boring activity impacted more than one-third of trees through the creation of tree holes that are now used, presumably as predation or thermal refuge, by the herbivorous mangrove tree crab Aratus pisonii. The presence of these refuges had a significant impact on plant-animal interactions; herbivory was more than fivefold higher on trees influenced by tree holes relative to those that were completely isolated from these refuges. Additionally, herbivory decreased exponentially with increasing distance from tree holes. We use individual-based simulation modelling to demonstrate that the creation of these herbivory patterns depends on a combination of the use of engineered tree holes for refuge by tree crabs, and the use of two behaviour patterns in this species-site fidelity to a "home tree," and more frequent foraging near their home tree. We demonstrate that understanding the spatial distribution of herbivory in this system depends on combining both the use of ecosystem engineering structures with individual behavioural patterns of herbivores. © 2017 The Authors. Journal of Animal Ecology © 2017 British Ecological Society.

Hot-air soldering technique prevents overheating of electrical components

NASA Technical Reports Server (NTRS)

1964-01-01

By using a hot-air gun with a small orifice, heat may be localized to the soldering area of the chassis. The solder is placed around the capacitor which is inserted in the mounting hole so the ring is in contact with the chassis.

Lithographic performance of recent DUV photoresists

NASA Astrophysics Data System (ADS)

Streefkerk, Bob; van Ingen Schenau, Koen; Buijk, Corine

1998-06-01

Commercially available photoresists from the major photoresist vendors are investigated using a PAS 5500/300 wafer stepper, a 31.1 mm diameter field size high throughput wafer stepper with variable NA capability up to 0.63. The critical dimension (CD) investigated is 0.25 micrometers and lower for dense and isolated lines and 0.25 micrometers for dense contact holes. The photoresist process performance is quantified by measuring exposure-defocus windows for a specific resolution using a CD SEM. Photoresists that are comparable with or better than APEX-E with RTC top coat, which is the current base line process for lines and spaces imaging performance, are Clariant AZ-DX1300 and Shin Etsu SEPR-4103PB50. Most recent photoresists have much improved delay performance when compared to APEX without top coat. Improvement, when an organic BARC is applied, depends on the actual photoresist characteristics. The optimal photoresist found for 0.25 micrometers contact holes is TOK DP015 C. This process operates at optimal conditions.

Contour entropy: a new determinant of perceiving ground or a hole.

PubMed

Gillam, Barbara J; Grove, Philip M

2011-06-01

Figure-ground perception is typically described as seeing one surface occluding another. Figure properties, not ground properties, are considered the significant factors. In scenes, however, a near surface will often occlude multiple contours and surfaces, often at different depths, producing alignments that are improbable except under conditions of occlusion. We thus hypothesized that unrelated (high entropy) lines would tend to appear as ground in a figure-ground paradigm more often than similarly aligned ordered (low entropy) lines. We further hypothesized that for lines spanning a closed area, high line entropy should increase the hole-like appearance of that area. These predictions were confirmed in three experiments. The probability that patterned rectangles were seen as ground when alternated with blank rectangles increased with pattern entropy. A single rectangular shape appeared more hole-like when the entropy of the enclosed contours increased. Furthermore, these same contours, with the outline shape removed, gave rise to bounding illusory contours whose strength increased with contour entropy. We conclude that figure-ground and hole perception can be determined by properties of ground in the absence of any figural shape, or surround, factors.

Spray From a Rolling Tire: Mechanics of Droplet Formation

NASA Astrophysics Data System (ADS)

Plocher, Dennis; Browand, Fred

2010-11-01

The spray pattern immediately behind a single-groove tire rolling on a wet surface is produced in the laboratory using a specially designed tire spray simulator. The spray development is examined using high speed video. Water from the groove forms a liquid sheet as the tire-tread lifts away from the surface. The sheet is not of uniform thickness, but it remains attached to the tread. The thinner portions of the sheet become even thinner as the tire rotates, and eventually break to produce holes near the tire surface. The holes grow as the sheet margins surrounding the holes retract into the thicker portions of the sheet which become roughly cylindrical "ligaments" aligned at right angles to the direction of spray motion. The ligaments break into large droplets via a Rayleigh instability. The smallest droplets form when the margins of two holes collide. As Weber number, We = ρU^2w/2σ , based on tire groove half width, w/2, varies by a factor of 25, the sheet-ligament structure persists, but ligaments become less organized, and more small droplets appear in the pattern.

Reducing the contact resistance in bottom-contact-type organic field-effect transitors using an AgO x interface layer

NASA Astrophysics Data System (ADS)

Minagawa, Masahiro; Kim, Yeongin; Claus, Martin; Bao, Zhenan

2017-09-01

Bottom-contact organic field-effect transistors (OFETs) are prepared by inserting an AgO x layer between a pentacene layer and the source-drain electrodes. The contact resistance in the device is ˜8.1 kΩ·cm with an AgO x layer oxidized for 60 s but reaches 116.9 kΩ·cm with a non-oxidized Ag electrode. The drain current and mobility in the OFETs with the AgO x layer increase with the oxidization time and then gradually plateau, and this trend strongly depends on the work function of the Ag surface. Further, the hole injection is enhanced by the presence of Ag2O but inhibited by the presence of AgO.

Electronic properties of MoS2 / MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

DOE PAGES

Santosh, K. C.; Longo, Roberto; Addou, Rafik; ...

2016-09-26

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS 2/MoO 3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO 3 and the relative band alignment with MoS 2, together with small energy gap, the MoS 2/MoO 3 interface is a goodmore » candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO 3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS 2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS 2 and MoO x (x < 3) interface, which consistently explains the available experimental observations.« less

Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts

PubMed Central

K. C., Santosh; Longo, Roberto C.; Addou, Rafik; Wallace, Robert M.; Cho, Kyeongjae

2016-01-01

In an electronic device based on two dimensional (2D) transitional metal dichalcogenides (TMDs), finding a low resistance metal contact is critical in order to achieve the desired performance. However, due to the unusual Fermi level pinning in metal/2D TMD interface, the performance is limited. Here, we investigate the electronic properties of TMDs and transition metal oxide (TMO) interfaces (MoS2/MoO3) using density functional theory (DFT). Our results demonstrate that, due to the large work function of MoO3 and the relative band alignment with MoS2, together with small energy gap, the MoS2/MoO3 interface is a good candidate for a tunnel field effect (TFET)-type device. Moreover, if the interface is not stoichiometric because of the presence of oxygen vacancies in MoO3, the heterostructure is more suitable for p-type (hole) contacts, exhibiting an Ohmic electrical behavior as experimentally demonstrated for different TMO/TMD interfaces. Our results reveal that the defect state induced by an oxygen vacancy in the MoO3 aligns with the valance band of MoS2, showing an insignificant impact on the band gap of the TMD. This result highlights the role of oxygen vacancies in oxides on facilitating appropriate contacts at the MoS2 and MoOx (x < 3) interface, which consistently explains the available experimental observations. PMID:27666523

Backside contacted field effect transistor array for extracellular signal recording.

PubMed

Ingebrandt, S; Yeung, C K; Staab, W; Zetterer, T; Offenhäusser, A

2003-04-01

A new approach to the design of field-effect transistor (FET) sensors and the use of these FETs in detecting extracellular electrophysiological recordings is reported. Backside contacts were engineered by deep reactive ion etching and a gas phase boron doping process of the holes using planar diffusion sources. The metal contacts were designed to fit on top of the bonding pads of a standard industrial 22-pin DIL (dual inline) chip carrier. To minimise contact resistance, the metal backside contacts of the chips were electroless plated with gold. The chips were mounted on top of the bonding pads using a standard flip-chip process and a fineplacer unit previously described. Rat embryonic myocytes were cultured on these new devices (effective growth area 6 x 6 mm(2)) in order to confirm their validity in electrophysiological recording. Copyright 2003 Elsevier Science B.V.

Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Xinyu, E-mail: xinyu.zhang@anu.edu.au; Wan, Yimao; Bullock, James

2016-08-01

This work explores the application of transparent nitrogen doped copper oxide (CuO{sub x}:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuO{sub x}:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuO{sub x}:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contactmore » resistivity of ∼10 mΩ cm{sup 2} has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.« less

Short-Term Deposition of PM2.5 Particles on Contact Lens Surfaces: Effect on Oxygen Permeability and Refractive Index.

PubMed

Dong, Zhizhang; Ding, Xiaoyan; Li, Yong; Gan, Yifeng; Wang, Yanhui; Xu, Libin; Wang, Yahong; Zhou, Ying; Li, Juan

2018-05-22

To identify the deposition of fine (≤2.5 μm diameter) particulate matter (PM) particles (PM 2.5 ) on contact lens surfaces and to investigate the effects of such deposition on the oxygen permeability (OP) and refractive index (RI) of contact lenses. A total of 36 contact lenses, including rigid gas permeable (RGP) lens and soft contact lens (SCL), were investigated. RGP lens (n=12) and SCL (n=12) (experimental group) were incubated in a PM 2.5 solution for 24 h, after which PM 2.5 -treated RGP lens (n=6) and SCL (n=6) were further washed for 1 h in phosphate-buffered saline (PBS). All lenses were examined by field emission scanning electron microscopy. OP and RI of all lenses were measured. Average-sized PM 2.5 particles deposited on RGP contact lens and SCL surfaces after immersion in the PM 2.5 solution were 3.192 ± 1.637 and 2.158 ± 1.187/100 μm 2 , respectively. On RGP lens surfaces, we observed both large (≥2.5 µm diameter) and small (PM 2.5 ) particles. PM 2.5 particles were deposited in diffuse patterns, primarily along the honeycomb structural border of SCL, while no PM 2.5 particles were found in the honeycomb hole of SCL surfaces. Washing in PBS removed the larger PM particles from RGP lens surfaces, but left copious amounts of PM 2.5 particles. In contrast, nearly all PM particles were removed from SCL surfaces after PBS washing. OP values of RGP lens and SCL appeared to be unchanged by PM 2.5 deposition. RI values increased in both RGP lens and SCL groups after PM 2.5 deposition. However, these increases were not statistically significant, suggesting that PM 2.5 deposition itself does not cause fluctuations in contact lens RI. Deposition of PM 2.5 particles on contact lens surfaces varies according to lens material. PM 2.5 particles deposited on SCL, but only large particles on RGP surfaces were able to be removed by washing in PBS and did not appear to alter OP and RI of either lens type.

Fabrication of PDMS through-holes using the MIMIC method and the surface treatment by atmospheric-pressure CH4/He RF plasma

NASA Astrophysics Data System (ADS)

Choi, Jongchan; Lee, Kyeong-Hwan; Yang, Sung

2011-09-01

This note presents a simple fabrication process for patterning micro through-holes in a PDMS layer by a combination of the micromolding in capillaries (MIMIC) method and the surface treatment by atmospheric-pressure CH4/He RF plasma. The fabrication process is confirmed by forming micro through-holes with various shapes including circle, C-shape, open microfluidic channel and hemisphere. All micro through-holes of various shapes in a wide range of diameters and heights are well fabricated by the proposed method. Also, a 3D micromixer containing a PDMS micro through-hole layer formed by the proposed method is built and its performance is tested as another practical demonstration of the proposed fabrication method. Therefore, we believe that the proposed fabrication process will build a PDMS micro through-hole layer in a simple and easy way and will contribute to developing highly efficient multi-layered microfluidic systems, which may require PDMS micro through-hole layers.

Dynamical thermalization in isolated quantum dots and black holes

NASA Astrophysics Data System (ADS)

Kolovsky, Andrey R.; Shepelyansky, Dima L.

2017-01-01

We study numerically a model of quantum dot with interacting fermions. At strong interactions with small conductance the model is reduced to the Sachdev-Ye-Kitaev black-hole model while at weak interactions and large conductance it describes a Landau-Fermi liquid in a regime of quantum chaos. We show that above the Åberg threshold for interactions there is an onset of dynamical themalization with the Fermi-Dirac distribution describing the eigenstates of an isolated dot. At strong interactions in the isolated black-hole regime there is also the onset of dynamical thermalization with the entropy described by the quantum Gibbs distribution. This dynamical thermalization takes place in an isolated system without any contact with a thermostat. We discuss the possible realization of these regimes with quantum dots of 2D electrons and cold ions in optical lattices.

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

NASA Astrophysics Data System (ADS)

Galeti, H. V. A.; Galvão Gobato, Y.; Brasil, M. J. S. P.; Taylor, D.; Henini, M.

2018-03-01

We have investigated the spin properties of a two-dimensional hole gas (2DHG) formed at the contact layer of a p-type GaAs/AlAs resonant tunneling diode (RTD). We have measured the polarized-resolved photoluminescence of the RTD as a function of bias voltage, laser intensity and external magnetic field up to 15T. By tuning the voltage and the laser intensity, we are able to change the spin-splitting from the 2DHG from almost 0 meV to 5 meV and its polarization degree from - 40% to + 50% at 15T. These results are attributed to changes of the local electric field applied to the two-dimensional gas which affects the valence band and the hole Rashba spin-orbit effect.

Effect of mask dead space and occlusion of mask holes on delivery of nebulized albuterol.

PubMed

Berlinski, Ariel

2014-08-01

Infants and children with respiratory conditions are often prescribed bronchodilators. Face masks are used to facilitate the administration of nebulized therapy in patients unable to use a mouthpiece. Masks incorporate holes into their design, and their occlusion during aerosol delivery has been a common practice. Masks are available in different sizes and different dead volumes. The aim of this study was to compare the effect of different degrees of occlusion of the mask holes and different mask dead space on the amount of nebulized albuterol available at the mouth opening in a model of a spontaneously breathing child. A breathing simulator mimicking infant (tidal volume [VT] = 50 mL, breathing frequency = 30 breaths/min, inspiratory-expiratory ratio [I:E] = 1:3), child (VT = 155 mL, breathing frequency = 25 breaths/min, I:E = 1:2), and adult (VT = 500 mL, breathing frequency = 15 breaths/min, I:E = 1:2) breathing patterns was connected to a collection filter hidden behind a face plate. A pediatric size mask and an adult size mask connected to a continuous output jet nebulizer were sealed to the face plate. Three nebulizers were loaded with albuterol sulfate (2.5 mg/3 mL) and operated with 6 L/min compressed air for 5 min. Experiments were repeated with different degrees of occlusion (0%, 50%, and 90%). Albuterol was extracted from the filter and measured with a spectrophotometer at 276 nm. Occlusion of the holes in the large mask did not increase the amount of albuterol in any of the breathing patterns. The amount of albuterol captured at the mouth opening did not change when the small mask was switched to the large mask, except with the breathing pattern of a child, and when the holes in the mask were 50% occluded (P = .02). Neither decreasing the dead space of the mask nor occluding the mask holes increased the amount of nebulized albuterol captured at the mouth opening.

Trap-induced charge transfer/transport at energy harvesting assembly

NASA Astrophysics Data System (ADS)

Cho, Seongeun; Paik, Hanjong; Kim, Tae Wan; Park, Byoungnam

2017-02-01

Understanding interfacial electronic properties between electron donors and acceptors in hybrid optoelectronic solar cells is crucial in governing the device parameters associated with energy harvesting. To probe the electronic localized states at an electron donor/acceptor interface comprising a representative hybrid solar cell, we investigated the electrical contact properties between Al-doped zinc oxide (AZO) and poly (3-hexylthiophene) (P3HT) using AZO as the source and drain electrodes, pumping carriers from AZO into P3HT. The injection efficiency was evaluated using the transmission line method (TLM) in combination with field effect transistor characterizations. Highly conductive AZO films worked as the source and drain electrodes in the devices for TLM and field effect measurements. A comparable contact resistance difference between AZO/P3HT/AZO and Au/P3HT/Au structures contradicts the fact that a far larger energy barrier exists for electrons and holes between AZO and P3HT compared with between P3HT and Au based on the Schottky-Mott model. It is suggested that band to band tunneling accounts for the contradiction through the initial hop from AZO to P3HT for hole injection. The involvement of the tunneling mechanism in determining the contact resistance implies that there is a high density of electronic traps in the organic side.

Device for measuring hole elongation in a bolted joint

NASA Technical Reports Server (NTRS)

Wichorek, Gregory R. (Inventor)

1987-01-01

A device to determine the operable failure mode of mechanically fastened lightweight composite joints by measuring the hole elongation of a bolted joint is disclosed. The double-lap joint test apparatus comprises a stud, a test specimen having a hole, two load transfer plates, and linear displacement measuring instruments. The test specimen is sandwiched between the two load transfer plates and clamped together with the stud. Spacer washers are placed between the test specimen and each load transfer plate to provide a known, controllable area for the determination of clamping forces around the hole of the specimen attributable to bolt torque. The spacer washers also provide a gap for the mounting of reference angles on each side of the test specimen. Under tensile loading, elongation of the hole of the test specimen causes the stud to move away from the reference angles. This displacement is measured by the voltage output of two linear displacement measuring instruments that are attached to the stud and remain in contact with the reference angles throughout the tensile loading. The present invention obviates previous problems in obtaining specimen deformation measurements by monitoring the reference angles to the test specimen and the linear displacement measuring instruments to the stud.

On Ni/Au Alloyed Contacts to Mg-Doped GaN

NASA Astrophysics Data System (ADS)

Sarkar, Biplab; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Rounds, Robert; Kirste, Ronny; Mita, Seiji; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

2018-01-01

Ni/Au contacts to p-GaN were studied as a function of free hole concentration in GaN using planar transmission line measurement structures. All contacts showed a nonlinear behavior, which became stronger for lower doping concentrations. Electrical and structural analysis indicated that the current conduction between the contact and the p-GaN was through localized nano-sized clusters. Thus, the non-linear contact behavior can be well explained using the alloyed contact model. Two contributions to the contact resistance were identified: the spreading resistance in the semiconductor developed by the current crowding around the electrically active clusters, and diode-type behavior at the interface of the electrically active clusters with the semiconductor. Hence, the equivalent Ni/Au contact model consists of a diode and a resistor in series for each active cluster. The reduced barrier height observed in the measurements is thought to be generated by the extraction of Ga from the crystalline surface and localized formation of the Au:Ga phase. The alloyed contact analyses presented in this work are in good agreement with some of the commonly observed behavior of similar contacts described in the literature.

Vocal fold contact patterns based on normal modes of vibration.

PubMed

Smith, Simeon L; Titze, Ingo R

2018-05-17

The fluid-structure interaction and energy transfer from respiratory airflow to self-sustained vocal fold oscillation continues to be a topic of interest in vocal fold research. Vocal fold vibration is driven by pressures on the vocal fold surface, which are determined by the shape of the glottis and the contact between vocal folds. Characterization of three-dimensional glottal shapes and contact patterns can lead to increased understanding of normal and abnormal physiology of the voice, as well as to development of improved vocal fold models, but a large inventory of shapes has not been directly studied previously. This study aimed to take an initial step toward characterizing vocal fold contact patterns systematically. Vocal fold motion and contact was modeled based on normal mode vibration, as it has been shown that vocal fold vibration can be almost entirely described by only the few lowest order vibrational modes. Symmetric and asymmetric combinations of the four lowest normal modes of vibration were superimposed on left and right vocal fold medial surfaces, for each of three prephonatory glottal configurations, according to a surface wave approach. Contact patterns were generated from the interaction of modal shapes at 16 normalized phases during the vibratory cycle. Eight major contact patterns were identified and characterized by the shape of the flow channel, with the following descriptors assigned: convergent, divergent, convergent-divergent, uniform, split, merged, island, and multichannel. Each of the contact patterns and its variation are described, and future work and applications are discussed. Copyright © 2018 Elsevier Ltd. All rights reserved.

Two-Step Physical Deposition of a Compact CuI Hole-Transport Layer and the Formation of an Interfacial Species in Perovskite Solar Cells.

PubMed

Gharibzadeh, Saba; Nejand, Bahram Abdollahi; Moshaii, Ahmad; Mohammadian, Nasim; Alizadeh, Amir Hossein; Mohammadpour, Rahele; Ahmadi, Vahid; Alizadeh, Abdolali

2016-08-09

A simple and practical approach is introduced for the deposition of CuI as an inexpensive inorganic hole-transport material (HTM) for the fabrication of low cost perovskite solar cells (PSCs) by gas-solid phase transformation of Cu to CuI. The method provides a uniform and well-controlled CuI layer with large grains and good compactness that prevents the direct connection between the contact electrodes. Solar cells prepared with CuI as the HTM with Au electrodes displays an exceptionally high short-circuit current density of 32 mA cm(-2) , owing to an interfacial species formed between the perovskite and the Cu resulting in a long wavelength contribution to the incident photon-to-electron conversion efficiency (IPCE), and an overall power conversion efficiency (PCE) of 7.4 %. The growth of crystalline and uniform CuI on a low roughness perovskite layer leads to remarkably high charge extraction in the cells, which originates from the high hole mobility of CuI in addition to a large number of contact points between CuI and the perovskite layer. In addition, the solvent-free method has no damaging side effect on the perovskite layer, which makes it an appropriate method for large scale applications of CuI in perovskite solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

PubMed

Khan, Muhammad Atif; Rathi, Servin; Lee, Changhee; Lim, Dongsuk; Kim, Yunseob; Yun, Sun Jin; Youn, Doo Hyeb; Kim, Gil-Ho

2018-06-25

Two-dimensional (2D) materials based heterostructures provide a unique platform where interaction between stacked 2D layers can enhance the electrical and opto-electrical properties as well as give rise to interesting new phenomena. Here, operation of a van der Waals heterostructure device comprising of vertically stacked bi-layer MoS 2 and few layered WSe 2 has been demonstrated in which atomically thin MoS 2 layer has been employed as a tunneling layer to the underlying WSe 2 layer. In this way, simultaneous contacts to both MoS 2 and WSe 2 2D layers have been established by forming direct MS (metal semiconductor) to MoS 2 and tunneling based MIS (metal insulator semiconductor) contacts to WSe 2 , respectively. The use of MoS 2 as a dielectric tunneling layer results in improved contact resistance (80 kΩ-µm) for WSe 2 contact, which is attributed to reduction in effective Schottky barrier height and is also confirmed from the temperature dependent measurement. Further, this unique contact engineering and type II band alignment between MoS 2 and WSe 2 enables a selective and independent carrier transport across the respective layers. This contact engineered dual channel heterostructure exhibits an excellent gate control and both channel current and carrier types can be modulated by the vertical electric field of the gate electrode, which is also reflected in on/off ratio of 10 4 for both electrons (MoS 2 ) and holes (WSe 2 ) channels. Moreover, the charge transfer at the heterointerface is studied quantitatively from the shift in the threshold voltage of the pristine MoS 2 and heterostructure device, which agrees with the carrier recombination induced optical quenching as observed in the Raman spectra of the pristine and heterostructure layers. This observation of dual channel ambipolar transport enabled by the hybrid tunneling contacts and strong interlayer coupling can be utilized for high performance opto-electrical devices and applications.

Landau-Zener-Stückelberg-Majorana Interferometry of a Single Hole

NASA Astrophysics Data System (ADS)

Bogan, Alex; Studenikin, Sergei; Korkusinski, Marek; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, Andy S.; Tracy, Lisa; Reno, John; Hargett, Terry

2018-05-01

We perform Landau-Zener-Stückelberg-Majorana (LZSM) spectroscopy on a system with strong spin-orbit interaction (SOI), realized as a single hole confined in a gated double quantum dot. Analogous to electron systems, at a magnetic field B =0 and high modulation frequencies, we observe photon-assisted tunneling between dots, which smoothly evolves into the typical LZSM funnel-shaped interference pattern as the frequency is decreased. In contrast to electrons, the SOI enables an additional, efficient spin-flip interdot tunneling channel, introducing a distinct interference pattern at finite B . Magnetotransport spectra at low-frequency LZSM driving show the two channels to be equally coherent. High-frequency LZSM driving reveals complex photon-assisted tunneling pathways, both spin conserving and spin flip, which form closed loops at critical magnetic fields. In one such loop, an arbitrary hole spin state is inverted, opening the way toward its all-electrical manipulation.

Observations of a pressurized hydraulic hose under lateral liquid impacts

NASA Astrophysics Data System (ADS)

Stewart, C. D.; Gorman, D. G.

The effects of 'pin-hole' failure of one pressurized hydraulic hose on its neighbour are investigated. A pressurized test hose was inserted into a custom testing apparatus and subjected to a series of ten short duration liquid impacts simulating the pin-hole failure of an initial hose. Subsequent displacements of the hose were filmed and plotted with respect to time. Three distinct pattern groups emerged which were used to explain the resultant damage to the hose. It was observed that the middle pattern, corresponding to impacts 6 and 7, appears to be the point where the very damaging hydraulic penetration mechanism became dominant and the outer layer of the hose failed. On completion of the ten impact series it was observed that a small hole on the outer surface of the hose gave way to a relatively large damaged area in the strength bearing inner braid material.

Interface Play between Perovskite and Hole Selective Layer on the Performance and Stability of Perovskite Solar Cells.

PubMed

Salado, Manuel; Idigoras, Jesus; Calio, Laura; Kazim, Samrana; Nazeeruddin, Mohammad Khaja; Anta, Juan A; Ahmad, Shahzada

2016-12-21

Perovskite solar cells with variety of hole selective contacts such as 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (Spiro-OMeTAD), poly(3-hexylthiophene-2,5-diyl), poly[bis(4-phenyl)(2,5,6-trimentlyphenyl)amine], 5,10,15-trihexyl-3,8,13-tris(4-methoxyphenyl)-10,15-dihydro-5H-diindolo[3,2-a:3',2'-c]carbazole (HMPDI), and 2',7'-bis(bis(4-methoxyphenyl)amino)spiro[cyclopenta[2,1-b:3,4-b']dithiophene-4,9'-fluorene] were employed to elucidate its role at the interface of perovskite and metallic cathode. Microscopy images revealed Spiro-OMeTAD and HMPDI produce smoother and intimate contact between perovskite/hole transporting materials (HTM) interfaces among others evaluated here. This morphological feature appears to be connected with three fundamental facts: (1) hole injection to the HTM is much more efficient as evidenced by photoluminescence measurements, (2) recombination losses are less important as evidenced by intensity-modulated photovoltage spectroscopy and impedance spectroscopy measurements, and (3) fabricated solar cells are much more robust against degradation by moisture. Devices with higher open-circuit photovoltages are characterized by higher values of the recombination resistance extracted from the impedance data. The variation in device hysteresis behavior can be ascribed mainly due to the molecular interaction and the core of HTM employed. In all cases, this fact is related with a larger value of the low-frequency capacitance, which indicates that the HTM can induce specific slow processes of ion accumulation at the interface. Notably, these processes tend to slowly relax in time, as hysteresis is substantially reduced for aged devices.

Towards a formalism for mapping the spacetimes of massive compact objects: Bumpy black holes and their orbits

NASA Astrophysics Data System (ADS)

Collins, Nathan A.; Hughes, Scott A.

2004-06-01

Astronomical observations have established that extremely compact, massive objects are common in the Universe. It is generally accepted that these objects are, in all likelihood, black holes. As observational technology has improved, it has become possible to test this hypothesis in ever greater detail. In particular, it is or will be possible to measure the properties of orbits deep in the strong field of a black hole candidate (using x-ray timing or future gravitational-wave measurements) and to test whether they have the characteristics of black hole orbits in general relativity. Past work has shown that, in principle, such measurements can be used to map the spacetime of a massive compact object, testing in particular whether the object’s multipolar structure satisfies the rather strict constraints imposed by the black hole hypothesis. Performing such a test in practice requires that we be able to compare against objects with the “wrong” multipole structure. In this paper, we present tools for constructing the spacetimes of bumpy black holes: objects that are almost black holes, but that have some multipoles with the wrong value. In this first analysis, we focus on objects with no angular momentum. Generalization to bumpy Kerr black holes should be straightforward, albeit labor intensive. Our construction has two particularly desirable properties. First, the spacetimes which we present are good deep into the strong field of the object—we do not use a “large r” expansion (except to make contact with weak field intuition). Second, our spacetimes reduce to the exact black hole spacetimes of general relativity in a natural way, by dialing the “bumpiness” of the black hole to zero. We propose that bumpy black holes can be used as the foundation for a null experiment: if black hole candidates are indeed the black holes of general relativity, their bumpiness should be zero. By comparing the properties of orbits in a bumpy spacetime with those measured from an astrophysical source, observations should be able to test this hypothesis, stringently testing whether they are in fact the black holes of general relativity.

Hole localization in Fe2O3 from density functional theory and wave-function-based methods

NASA Astrophysics Data System (ADS)

Ansari, Narjes; Ulman, Kanchan; Camellone, Matteo Farnesi; Seriani, Nicola; Gebauer, Ralph; Piccinin, Simone

2017-08-01

Hematite (α -Fe2O3 ) is a promising photocatalyst material for water splitting, where photoinduced holes lead to the oxidation of water and the release of molecular oxygen. In this work, we investigate the properties of holes in hematite using density functional theory (DFT) calculations with hybrid functionals. We find that holes form small polarons and, depending on the fraction of exact exchange included in the PBE0 functional, the site where the holes localize changes from Fe to O. We find this result to be independent of the size and structure of the system: small Fe2O3 clusters with tetrahedral coordination, larger clusters with octahedral coordination, Fe2O3 (001) surfaces in contact with water, and bulk Fe2O3 display a very similar behavior in terms of hole localization as a function of the fraction of exact exchange. We then use wave-function-based methods such as coupled cluster with single and double excitations and Møller-Plesset second-order perturbation theory applied on a cluster model of Fe2O3 to shed light on which of the two solutions is correct. We find that these high-level quantum chemistry methods suggest holes in hematite are localized on oxygen atoms. We also explore the use of the DFT +U approach as a computationally convenient way to overcome the known limitations of generalized gradient approximation functionals and recover a gap in line with experiments and hole localization on oxygen in agreement with quantum chemistry methods.

Late Closure of a Stage III Idiopathic Macular Hole after Pars Plana Vitrectomy.

PubMed

Afrashi, Filiz; Öztaş, Zafer; Nalçacı, Serhad

2015-12-01

A 57-year-old female presented to our hospital with decreased vision in her right eye. Detailed ocular examination was performed, and a macular hole was detected in the right eye. The presence of a full-thickness stage III macular hole was confirmed with optical coherence tomography (OCT) imaging. Pars plana vitrectomy followed by long-acting gas tamponade (C3F8) was performed as treatment. One month after surgery, clinical examination revealed a persistent macular hole, confirmed by an OCT scan. Although the patient was scheduled for reoperation, the surgery was postponed due to personal reasons of the patient. Surprisingly, after five months, a closure pattern with accompanying epiretinal membrane was observed in the macular hole area. The closure of the macular hole was completed without any further intervention 8 months post-surgery. In cases of unclosed macular hole after the first surgery, if a second surgery cannot be performed, follow-up with OCT recommended due to the possibility of spontaneous closure. However, spontaneous closure of a persistent macular hole following PPV is rare, so early diagnosis and surgical repair of unclosed macular holes must remain the primary goal.

Biomechanical Testing of a 3-Hole versus a 4-Hole Sliding Hip Screw in the presence of a Retrograde Intramedullary Nail for Ipsilateral Intertrochanteric and Femur Shaft Fractures.

PubMed

Olsen, Michael; Goshulak, Peter; Crookshank, Meghan C; Moktar, Joel; Brazda, Ignace J; Schemitsch, Emil H; Zdero, Radovan

2018-04-03

The goal of this study was to compare a 3-hole vs. a 4-hole sliding hip screw (SHS) in the presence of a retrograde intramedullary (RIM) nail for fixing intertrochanteric and comminuted midshaft femur fractures. Mechanical tests were performed on 10 matched pairs of human cadaveric femurs that were osteotomized and then fixed using a 3-hole SHS vs. the traditional "gold standard" 4-hole SHS in the presence of a RIM nail. Data showed no differences between the 3-hole SHS with RIM nail vs. 4-hole SHS with RIM nail for stiffness (281 +/- 127 vs. 260 +/- 118 N/mm, p=0.76), clinical failure at 10 mm of hip displacement (2014 +/- 363 vs. 2134 +/- 614 N, p=0.52), or ultimate mechanical failure (3476 +/- 776 vs. 3669 +/- 755 N, p=0.12). For this fracture pattern, a 3-hole SHS with RIM nail may be a suitable surgical alternative to the traditional "gold standard" method, since it provides the same biomechanical properties while potentially reducing surgical time, blood loss, and hardware used. Level III biomechanical study.

Large-scale fabrication of vertically aligned ZnO nanowire arrays

DOEpatents

Wang, Zhong L; Das, Suman; Xu, Sheng; Yuan, Dajun; Guo, Rui; Wei, Yaguang; Wu, Wenzhuo

2013-02-05

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.

Storage of sparse files using parallel log-structured file system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bent, John M.; Faibish, Sorin; Grider, Gary

A sparse file is stored without holes by storing a data portion of the sparse file using a parallel log-structured file system; and generating an index entry for the data portion, the index entry comprising a logical offset, physical offset and length of the data portion. The holes can be restored to the sparse file upon a reading of the sparse file. The data portion can be stored at a logical end of the sparse file. Additional storage efficiency can optionally be achieved by (i) detecting a write pattern for a plurality of the data portions and generating a singlemore » patterned index entry for the plurality of the patterned data portions; and/or (ii) storing the patterned index entries for a plurality of the sparse files in a single directory, wherein each entry in the single directory comprises an identifier of a corresponding sparse file.« less

Rational Strategies for Efficient Perovskite Solar Cells.

PubMed

Seo, Jangwon; Noh, Jun Hong; Seok, Sang Il

2016-03-15

A long-standing dream in the large scale application of solar energy conversion is the fabrication of solar cells with high-efficiency and long-term stability at low cost. The realization of such practical goals depends on the architecture, process and key materials because solar cells are typically constructed from multilayer heterostructures of light harvesters, with electron and hole transporting layers as a major component. Recently, inorganic-organic hybrid lead halide perovskites have attracted significant attention as light absorbers for the fabrication of low-cost and high-efficiency solar cells via a solution process. This mainly stems from long-range ambipolar charge transport properties, low exciton binding energies, and suitable band gap tuning by managing the chemical composition. In our pioneering work, a new photovoltaic platform for efficient perovskite solar cells (PSCs) was proposed, which yielded a high power conversion efficiency (PCE) of 12%. The platform consisted of a pillared architecture of a three-dimensional nanocomposite of perovskites fully infiltrating mesoporous TiO2, resulting in the formation of continuous phases and perovskite domains overlaid with a polymeric hole conductor. Since then, the PCE of our PSCs has been rapidly increased from 3% to over 20% certified efficiency. The unprecedented increase in the PCE can be attributed to the effective integration of the advantageous attributes of the refined bicontinuous architecture, deposition process, and composition of perovskite materials. Specifically, the bicontinuous architectures used in the high efficiency comprise a layer of perovskite sandwiched between mesoporous metal-oxide layer, which is a very thinner than that of used in conventional dye-sensitized solar cells, and hole-conducting contact materials with a metal back contact. The mesoporous scaffold can affect the hysteresis under different scan direction in measurements of PSCs. The hysteresis also greatly depends on the cell architecture and perovskite composition. In this Account, we will describe what we do with major aspects including (1) the film morphology through the development of intermediate chemistry retarding the rapid reaction between methylammonium or formamidinium iodide and lead halide (PbI2) for improved perovskite film formation; (2) the phase stability and band gap tuning of the perovskite layer through the materials engineering; (3) the development of electron and hole transporting materials for carrier-selective contacting layers; and (4) the adoption of p-i-n and n-i-p architectures depending on the position of the electron or hole conducting layer in front of incident light. Finally, we will summarize the recent incredible achievements in PSCs, and finally provide challenges facing the future development and commercialization of PSCs.

33 CFR 154.810 - Vapor line connections.

Code of Federal Regulations, 2011 CFR

2011-07-01

..., and (ii) The middle yellow band 0.8 meter (2.64 feet) wide; and (2) Labeled “VAPOR” in black letters.... The stud must be located at the top of the flange, midway between bolt holes, and in line with the bolt hole pattern. (d) Each hose used for transferring vapors must: (1) Have a design burst pressure of...

A View through a Bamboo Screen: From Moire Patterns to Black Holes.

ERIC Educational Resources Information Center

Oda, Minoru

1992-01-01

Describes the genesis, the early experiments, and the limitations of X-ray astronomy. Discusses original methods for searching and locating the first interstellar X-ray source, modern attempts to identify a massive black hole as part of a binary system X-ray source, and the effort to generate X-ray images of solar flares. (JJK)

33 CFR 154.810 - Vapor line connections.

Code of Federal Regulations, 2013 CFR

2013-07-01

..., and (ii) The middle yellow band 0.8 meter (2.64 feet) wide; and (2) Labeled “VAPOR” in black letters.... The stud must be located at the top of the flange, midway between bolt holes, and in line with the bolt hole pattern. (d) Each hose used for transferring vapors must: (1) Have a design burst pressure of...

33 CFR 154.810 - Vapor line connections.

Code of Federal Regulations, 2012 CFR

2012-07-01

..., and (ii) The middle yellow band 0.8 meter (2.64 feet) wide; and (2) Labeled “VAPOR” in black letters.... The stud must be located at the top of the flange, midway between bolt holes, and in line with the bolt hole pattern. (d) Each hose used for transferring vapors must: (1) Have a design burst pressure of...

Method for the fabrication of three-dimensional microstructures by deep X-ray lithography

DOEpatents

Sweatt, William C.; Christenson, Todd R.

2005-04-05

A method for the fabrication of three-dimensional microstructures by deep X-ray lithography (DXRL) comprises a masking process that uses a patterned mask with inclined mask holes and off-normal exposures with a DXRL beam aligned with the inclined mask holes. Microstructural features that are oriented in different directions can be obtained by using multiple off-normal exposures through additional mask holes having different orientations. Various methods can be used to block the non-aligned mask holes from the beam when using multiple exposures. A method for fabricating a precision 3D X-ray mask comprises forming an intermediate mask and a master mask on a common support membrane.

Fault and fracture patterns around a strike-slip influenced salt wall

NASA Astrophysics Data System (ADS)

Alsop, G. I.; Weinberger, R.; Marco, S.; Levi, T.

2018-01-01

The trends of faults and fractures in overburden next to a salt diapir are generally considered to be either parallel to the salt margin to form concentric patterns, or at right angles to the salt contact to create an overall radial distribution around the diapir. However, these simple diapir-related patterns may become more complex if regional tectonics influences the siting and growth of a diapir. Using the Sedom salt wall in the Dead Sea Fault system as our case study, we examine the influence of regional strike-slip faulting on fracture patterns around a salt diapir. This type of influence is important in general as the distribution and orientation of fractures on all scales may influence permeability and hence control fluid and hydrocarbon flow. Fractures adjacent to the N-S trending salt wall contain fibrous gypsum veins and injected clastic dykes, attesting to high fluid pressures adjacent to the diapir. Next to the western flank of the salt wall, broad (∼1000 m) zones of upturn or 'drape folds' are associated with NW-SE striking conjugate extensional fractures within the overburden. Within 300 m of the salt contact, fracture patterns in map view display a progressive ∼30°-35° clockwise rotation with more NNW-SSE strikes immediately adjacent to the salt wall. While some extensional faults display growth geometries, indicating that they were syn-depositional and initiated prior to tilting of beds associated with drape folding, other fractures display increasing dips towards the salt, suggesting that they have formed during upturn of bedding near the diapir. These observations collectively suggest that many fractures developed to accommodate rotation of beds during drape folding. Extensional fractures in the overburden define a mean strike that is ∼45° anticlockwise (counter-clockwise) of the N-S trending salt wall, and are therefore consistent with sinistral transtension along the N-S trending Sedom Fault that underlies the salt wall. Our outcrop analysis reveals fracture geometries that are related to both tilting of beds during drape folding, and regional strike-slip tectonics. The presence of faults and fractures that interact with drape folds suggests that deformation in overburden next to salt cannot be simply pigeon-holed into 'end-member' scenarios of purely brittle faulting or viscous flow.

Development of a robust reverse tone pattern transfer process

NASA Astrophysics Data System (ADS)

Khusnatdinov, Niyaz; Doyle, Gary; Resnick, Douglas J.; Ye, Zhengmao; LaBrake, Dwayne; Milligan, Brennan; Alokozai, Fred; Chen, Jerry

2017-03-01

Pattern transfer is critical to any lithographic technology, and plays a significant role in defining the critical features in a device layer. As both the memory and logic roadmaps continue to advance, greater importance is placed on the scheme used to do the etching. For many critical layers, a need has developed which requires a multilayer stack to be defined in order to perform the pattern transfer. There are many cases however, where this standard approach does not provide the best results in terms of critical dimension (CD) fidelity and CD uniformity. As an example, when defining a contact pattern, it may be advantageous to apply a bright field mask (in order to maximize the normalized inverse log slope (NILS)) over the more conventional dark field mask. The result of applying the bright field mask in combination with positive imaging resist is to define an array of pillar patterns, which then must be converted back to holes before etching the underlying dielectric material. There have been several publications on tone reversal that is introduced in the resist process itself, but often an etch transfer process is applied to reverse the pattern tone. The purpose of this paper is to describe the use of a three layer reverse tone process (RTP) that is capable of reversing the tone of every printed feature type. The process utilizes a resist pattern, a hardmask layer and an additional protection layer. The three layer approach overcomes issues encountered when using a single masking layer. Successful tone reversal was demonstrated both on 300mm wafers and imprint masks, including the largest features in the pattern, with dimensions as great as 60 microns. Initial in-field CD uniformity is promising. CDs shifted by about 2.6nm and no change was observed in either LER or LWR. Follow-up work is required to statistically qualify in-field CDU and also understand both across wafer uniformity and feature linearity.

Probability of detection for bolt hole eddy current in extracted from service aircraft wing structures

NASA Astrophysics Data System (ADS)

Underhill, P. R.; Uemura, C.; Krause, T. W.

2018-04-01

Fatigue cracks are prone to develop around fasteners found in multi-layer aluminum structures on aging aircraft. Bolt hole eddy current (BHEC) is used for detection of cracks from within bolt holes after fastener removal. In support of qualification towards a target a90/95 (detect 90% of cracks of depth a, 95% of the time) of 0.76 mm (0.030"), a preliminary probability of detection (POD) study was performed to identify those parameters whose variation may keep a bolt hole inspection from attaining its goal. Parameters that were examined included variability in lift-off due to probe type, out-of-round holes, holes with diameters too large to permit surface-contact of the probe and mechanical damage to the holes, including burrs. The study examined the POD for BHEC of corner cracks in unfinished fastener holes extracted from service material. 68 EDM notches were introduced into two specimens of a horizontal stabilizer from a CC-130 Hercules aircraft. The fastener holes were inspected in the unfinished state, simulating potential inspection conditions, by 7 certified inspectors using a manual BHEC setup with an impedance plane display and also with one inspection conducted utilizing a BHEC automated C-Scan apparatus. While the standard detection limit of 1.27 mm (0.050") was achieved, given the a90/95 of 0.97 mm (0.039"), the target 0.76 mm (0.030") was not achieved. The work highlighted a number of areas where there was insufficient information to complete the qualification. Consequently, a number of recommendations were made. These included; development of a specification for minimum probe requirements; criteria for condition of the hole to be inspected, including out-of-roundness and presence of corrosion pits; statement of range of hole sizes; inspection frequency and data display for analysis.

Controlling the Transient Interface Shape and Deposition Profile Left by Desiccation of Colloidal Droplets on Multiple Polymer Surfaces

NASA Astrophysics Data System (ADS)

Dunning, Peter David

A colloidal suspension is a small constituent of insoluble solid particles suspended in a liquid medium. Control over the wetting, evaporation, and deposition patterns left by colloidal suspensions is valuable in many biological, medical, industrial, and agricultural applications. Understanding the governing principles of wetting and evaporative phenomena of these colloidal suspensions may lead to greater control over resultant deposition patterns. Perhaps the most familiar pattern forms when an initially heterogeneous colloidal suspension leaves a dark ring pattern at the edge of a drop. This pattern is referred to as a coffee-stain and it can be seen from dried droplets of spilled coffee. This coffee-stain effect was first investigated by Deegan et. al. who discovered that these patterns occur when outward radial flows driven by evaporation at the triple contact line dominate over other effects. While the presence of coffee-stain patterns is undesirable in many printing and medical diagnostic processes, it can also be advantageous in the production of low cost transparent conductive films, the deposition of metal vapor, and the manipulation of biological structures. Controlling the interactions between the substrate, liquid, vapor, and particles can lead to control over the size and morphology of evaporative deposition patterns left by aqueous colloidal suspensions. Several methods have been developed to control the evaporation of colloidal suspensions to either suppress or enhance the coffee stain effect. Electrowetting on Dielectric (EWOD) is one promising method that has been used to control colloidal depositions by applying either an AC or DC electric field. EWOD actuation has the potential to dynamically control colloidal deposition left by desiccated droplets to either suppress or enhance the coffee stain effect. It may also allow for independent control of the fluidic interface and deposition of particles via electrowetting and electrokinetic forces. Implementation of this technique requires that the colloidal droplet be separated from the active electrode by a dielectric layer to prevent electrolysis. A variety of polymer layers have been used in EWOD devices for a variety of applications. In applications that involve desiccation of colloidal suspensions, the material for this layer should be chosen carefully as it can play an important role in the resulting deposition pattern. An experimental method to monitor the transient evolution of the shape of an evaporating colloidal droplet and optically quantify the resultant deposition pattern is presented. Unactuated colloidal suspensions will be desiccated on a variety of substrates commonly used in EWOD applications. Transient image profiles and particle deposition patterns are examined for droplets containing fluorescent micro-particles. Qualitative and quantitative comparisons of these results will be used to compare multiple different cases in an effort to provide insight into the effects of polymer selection on the drying dynamics and resultant deposition patterns of desiccated colloidal materials. It was found that the equilibrium and receding contact angles between the surface and the droplet play a key role in the evaporation dynamics and the resulting deposition patterns left by a desiccated colloidal suspension. The equilibrium contact angle controls the initial contact diameter for a droplet of a given volume. As a droplet on a surface evaporates, the evolution of the interface shape and the contact diameter can generally be described by three different regimes. The Constant Contact Radius (CCR) regime occurs when the contact line is pinned while the contact angle decreases. The Constant Contact Angle (CCA) regime occurs when the contact line recedes while the contact angle remains constant. The Mixed regime occurs when the contact radius and angle both reduce over time. The presence of the CCA regime allows the contact line to recede creating a more uniform deposition. However, not all droplets move into the CCA regime. Some remain in the CCR regime creating a coffee-stain pattern. In order to transition into the CCA regime, the dynamic contact angle of the droplet must be reduced to an angle close to the receding contact angle. Transient interface shapes and deposition patterns were examined on four surfaces: (i) Glass, (ii) Kapton HN polyimide tape, (iii) SU-8 3005, and (iv) Teflon AF. Glass has a low equilibrium contact angle and a very low receding contact angle resulting in a large uniform coffee-stain deposition. Kapton HN and SU-8 3005 have similar equilibrium contact angles that result in similar initial contact diameters. However, Kapton HN pins at that initial diameter due to a low receding contact angle producing a smaller more intense coffee-stain. SU-8 3005 has a large receding contact angle that allows for the transition into the CCA regime which results in a smaller, more uniform, and more intense spot. Teflon AF has the largest equilibrium and receding contact angle producing the smallest, most uniform, and most intense spot. Results presented here suggest that a lower receding contact angle is beneficial in areas where the coffee-stain effect needs to be enhanced while a larger receding contact angle is beneficial in areas where the coffee-stain needs to be suppressed. Preliminary results are also presented examining droplets actuated via AC electrowetting to examine the effect of electrode geometry and applied voltage on electrowetting behavior and colloidal depositions in these cases. It was found that the Young-Lippmann equation needs to be modified to satisfy the modified capacitance per unit area of a system with different electrode geometries.

Photolithography-free laser-patterned HF acid-resistant chromium-polyimide mask for rapid fabrication of microfluidic systems in glass

NASA Astrophysics Data System (ADS)

Zamuruyev, Konstantin O.; Zrodnikov, Yuriy; Davis, Cristina E.

2017-01-01

Excellent chemical and physical properties of glass, over a range of operating conditions, make it a preferred material for chemical detection systems in analytical chemistry, biology, and the environmental sciences. However, it is often compromised with SU8, PDMS, or Parylene materials due to the sophisticated mask preparation requirements for wet etching of glass. Here, we report our efforts toward developing a photolithography-free laser-patterned hydrofluoric acid-resistant chromium-polyimide tape mask for rapid prototyping of microfluidic systems in glass. The patterns are defined in masking layer with a diode-pumped solid-state laser. Minimum feature size is limited to the diameter of the laser beam, 30 µm minimum spacing between features is limited by the thermal shrinkage and adhesive contact of the polyimide tape to 40 µm. The patterned glass substrates are etched in 49% hydrofluoric acid at ambient temperature with soft agitation (in time increments, up to 60 min duration). In spite of the simplicity, our method demonstrates comparable results to the other current more sophisticated masking methods in terms of the etched depth (up to 300 µm in borosilicate glass), feature under etch ratio in isotropic etch (~1.36), and low mask hole density. The method demonstrates high yield and reliability. To our knowledge, this method is the first proposed technique for rapid prototyping of microfluidic systems in glass with such high performance parameters. The proposed method of fabrication can potentially be implemented in research institutions without access to a standard clean-room facility.

Fabrication of organic FETs based on printing techniques and the improvement of FET properties by the insertion of solution-processable buffer layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Kanamori, Akira

2016-04-01

In this study, we developed multilayer deposition and patterning processes that can be used to fabricate all-printed, organic field-effect transistors (OFETs) on the basis of vacuum-free, solution-processable soft-lithography techniques. We have used regioregular poly(3-hexylthiophene) (P3HT) as a soluble p-type polymer semiconductor and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as a soluble n-type semiconductor, and cross-linked poly(vinyl phenol) (CL-PVP) as a low-temperature (<150 °C)-curable soluble polymer gate insulator. We have compared the electrical properties of OFETs with multiwalled carbon nanotubes (MWCNTs), silver nanoparticles (NPs), and their composites (or multilayers) as printed source-drain (S-D) electrodes in order to fabricate vacuum-free, all-printed OFETs. The P3HT-OFETs with MWCNT S-D electrodes exhibited higher hole mobility and on/off ratios than the devices with Ag NP S-D electrodes owing to better contact at the MWCNT/P3HT interface. On the other hand, Ag/molybdenum oxide (MoO3) S-D electrodes considerably enhanced the hole injection and caused the reduction in the on/off ratio and the difficulty in turning off the devices. The PCBM-OFETs with MWCNT S-D electrodes also exhibited higher electron mobility that is almost comparable to that of P3HT-OFETs and lower threshold voltage, which was considered to be due to the enhanced electron injection at the electrode interface.

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

PubMed

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) < 70 nA when I(on) > 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

Processing ultrasonic inspection data from multiple scan patterns for turbine rotor weld build-up evaluations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guan, Xuefei; Zhou, S. Kevin; Rasselkorde, El Mahjoub

The study presents a data processing methodology for weld build-up using multiple scan patterns. To achieve an overall high probability of detection for flaws with different orientations, an inspection procedure with three different scan patterns is proposed. The three scan patterns are radial-tangential longitude wave pattern, axial-radial longitude wave pattern, and tangential shear wave pattern. Scientific fusion of the inspection data is implemented using volume reconstruction techniques. The idea is to perform spatial domain forward data mapping for all sampling points. A conservative scheme is employed to handle the case that multiple sampling points are mapped to one grid location.more » The scheme assigns the maximum value for the grid location to retain the largest equivalent reflector size for the location. The methodology is demonstrated and validated using a realistic ring of weld build-up. Tungsten balls and bars are embedded to the weld build-up during manufacturing process to represent natural flaws. Flat bottomed holes and side drilled holes are installed as artificial flaws. Automatic flaw identification and extraction are demonstrated. Results indicate the inspection procedure with multiple scan patterns can identify all the artificial and natural flaws.« less

Processing ultrasonic inspection data from multiple scan patterns for turbine rotor weld build-up evaluations

NASA Astrophysics Data System (ADS)

Guan, Xuefei; Rasselkorde, El Mahjoub; Abbasi, Waheed; Zhou, S. Kevin

2015-03-01

The study presents a data processing methodology for weld build-up using multiple scan patterns. To achieve an overall high probability of detection for flaws with different orientations, an inspection procedure with three different scan patterns is proposed. The three scan patterns are radial-tangential longitude wave pattern, axial-radial longitude wave pattern, and tangential shear wave pattern. Scientific fusion of the inspection data is implemented using volume reconstruction techniques. The idea is to perform spatial domain forward data mapping for all sampling points. A conservative scheme is employed to handle the case that multiple sampling points are mapped to one grid location. The scheme assigns the maximum value for the grid location to retain the largest equivalent reflector size for the location. The methodology is demonstrated and validated using a realistic ring of weld build-up. Tungsten balls and bars are embedded to the weld build-up during manufacturing process to represent natural flaws. Flat bottomed holes and side drilled holes are installed as artificial flaws. Automatic flaw identification and extraction are demonstrated. Results indicate the inspection procedure with multiple scan patterns can identify all the artificial and natural flaws.

Hydrostratigraphic interpretation of test-hole and surface geophysical data, Elkhorn and Loup River Basins, Nebraska, 2008 to 2011

USGS Publications Warehouse

Hobza, Christopher M.; Bedrosian, Paul A.; Bloss, Benjamin R.

2012-01-01

The Elkhorn-Loup Model (ELM) was begun in 2006 to understand the effect of various groundwater-management scenarios on surface-water resources. During phase one of the ELM study, a lack of subsurface geological information was identified as a data gap. Test holes drilled to the base of the aquifer in the ELM study area are spaced as much as 25 miles apart, especially in areas of the western Sand Hills. Given the variable character of the hydrostratigraphic units that compose the High Plains aquifer system, substantial variation in aquifer thickness and characteristics can exist between test holes. To improve the hydrogeologic understanding of the ELM study area, the U.S. Geological Survey, in cooperation with the Nebraska Department of Natural Resources, multiple Natural Resources Districts participating in the ELM study, and the University of Nebraska-Lincoln Conservation and Survey Division, described the subsurface lithology at six test holes drilled in 2010 and concurrently collected borehole geophysical data to identify the base of the High Plains aquifer system. A total of 124 time-domain electromagnetic (TDEM) soundings of resistivity were collected at and between selected test-hole locations during 2008-11 as a quick, non-invasive means of identifying the base of the High Plains aquifer system. Test-hole drilling and geophysical logging indicated the base-of-aquifer elevation was less variable in the central ELM area than in previously reported results from the western part of the ELM study area, where deeper paleochannels were eroded into the Brule Formation. In total, more than 435 test holes were examined and compared with the modeled-TDEM soundings. Even where present, individual stratigraphic units could not always be identified in modeled-TDEM sounding results if sufficient resistivity contrast was not evident; however, in general, the base of aquifer [top of the aquifer confining unit (ACU)] is one of the best-resolved results from the TDEM-based models, and estimates of the base-of-aquifer elevation are in good accordance with those from existing test-hole data. Differences between ACU elevations based on modeled-TDEM and test-hole data ranged from 2 to 113 feet (0.6 to 34 meters). The modeled resistivity results reflect the eastward thinning of Miocene-age and older stratigraphic units, and generally allowed confident identification of the accompanying change in the stratigraphic unit forming the ACU. The differences in elevation of the top of the Ogallala, estimated on the basis of the modeled-TDEM resistivity, and the test-hole data ranged from 11 to 251 feet (3.4 to 77 meters), with two-thirds of model results being within 60 feet of the test-hole contact elevation. The modeled-TDEM soundings also provided information regarding the distribution of Plio-Pleistocene gravel deposits, which had an average thickness of 100 feet (30 meters) in the study area; however, in many cases the contact between the Plio-Pleistocene deposits and the overlying Quaternary deposits cannot be reliably distinguished using TDEM soundings alone because of insufficient thickness or resistivity contrast.

Triple-band metamaterial absorption utilizing single rectangular hole

NASA Astrophysics Data System (ADS)

Kim, Seung Jik; Yoo, Young Joon; Kim, Young Ju; Lee, YoungPak

2017-01-01

In the general metamaterial absorber, the single absorption band is made by the single meta-pattern. Here, we introduce the triple-band metamaterial absorber only utilizing single rectangular hole. We also demonstrate the absorption mechanism of the triple absorption. The first absorption peak was caused by the fundamental magnetic resonance in the metallic part between rectangular holes. The second absorption was generated by induced tornado magnetic field. The process of realizing the second band is also presented. The third absorption was induced by the third-harmonic magnetic resonance in the metallic region between rectangular holes. In addition, the visible-range triple-band absorber was also realized by using similar but smaller single rectangular-hole structure. These results render the simple metamaterials for high frequency in large scale, which can be useful in the fabrication of metamaterials operating in the optical range.

Insight into the CH3NH3PbI3/C interface in hole-conductor-free mesoscopic perovskite solar cells.

PubMed

Li, Jiangwei; Niu, Guangda; Li, Wenzhe; Cao, Kun; Wang, Mingkui; Wang, Liduo

2016-08-07

Perovskite solar cells (PSCs) with hole-conductor-free mesoscopic architecture have shown superb stability and great potential in practical application. The printable carbon counter electrodes take full responsibility of extracting holes from the active CH3NH3PbI3 absorbers. However, an in depth study of the CH3NH3PbI3/C interface properties, such as the structural formation process and the effect of interfacial conditions on hole extraction, is still lacking. Herein, we present, for the first time, an insight into the spatial confinement induced CH3NH3PbI3/C interface formation by in situ photoluminescence observations during the crystallization process of CH3NH3PbI3. The derived reaction kinetics allows a quantitative description of the perovskite formation process. In addition, we found that the interfacial contact between carbon and perovskite was dominant for hole extraction efficiency and associated with the photovoltaic parameter of short circuit current density (JSC). Consequently, we conducted a solvent vapor assisted process of PbI2 diffusion to carefully control the CH3NH3PbI3/C interface with less unreacted PbI2 barrier. The improvement of interface conditions thereby contributes to a high hole extraction proved by the charge extraction resistance and PL lifetime change, resulting in the increased JSC valve.

Resist characteristics with direct-write electron beam and SCALPEL exposure system

NASA Astrophysics Data System (ADS)

Sato, Mitsuru; Omori, Katsumi; Ishikawa, Kiyoshi; Nakayama, Toshimasa; Novembre, Anthony E.; Ocola, Leonidas E.

1999-06-01

High acceleration voltage electron beam exposure is one of the possible candidates for post-optical lithography. The use of electrons, instead of photons, avoids optical related problems such as the standing wave issues. However, resists must conform to certain needs for the SCALPEL system, such as exposure in a vacuum chamber with 100kv electron beams. Taking into account the challenging requirements of high resolution, high sensitivity, low bake dependency and no outgassing, TOK has been able to develop resists to meet most of the SCALPEL system needs. However, due to the nature of chemical amplification and the PEB dependency, as is the case with DUV resist which varies for different features, we must recommend different resist for multiple features such as dense lines, isolated lines and contact holes. TOK has designed an electron beam negative resist, EN-009, which demonstrate 100nm pattern resolution. The dose to print on the SCALPEL system is 5.0(mu) C/cm2. The electron beam positive resist, EP-004M, has been designed for line and space patterns. The dose to print on the SCALPEL system is 8.25(mu) C/cm2. The processing conditions are standard, using 0.26N developer. These are the lowest exposure energies reported to date for similar resolution on this exposure tools.

Spatial profile of charge storage in organic field-effect transistor nonvolatile memory using polymer electret

NASA Astrophysics Data System (ADS)

She, Xiao-Jian; Liu, Jie; Zhang, Jing-Yu; Gao, Xu; Wang, Sui-Dong

2013-09-01

Spatial profile of the charge storage in the pentacene-based field-effect transistor nonvolatile memories using poly(2-vinyl naphthalene) electret is probed. The electron trapping into the electret after programming can be space dependent with more electron storage in the region closer to the contacts, and reducing the channel length is an effective approach to improve the memory performance. The deficient electron supply in pentacene is proposed to be responsible for the inhomogeneous electron storage in the electret. The hole trapping into the electret after erasing is spatially homogeneous, arising from the sufficient hole accumulation in the pentacene channel.

Bearing-Load Modeling and Analysis Study for Mechanically Connected Structures

NASA Technical Reports Server (NTRS)

Knight, Norman F., Jr.

2006-01-01

Bearing-load response for a pin-loaded hole is studied within the context of two-dimensional finite element analyses. Pin-loaded-hole configurations are representative of mechanically connected structures, such as a stiffener fastened to a rib of an isogrid panel, that are idealized as part of a larger structural component. Within this context, the larger structural component may be idealized as a two-dimensional shell finite element model to identify load paths and high stress regions. Finite element modeling and analysis aspects of a pin-loaded hole are considered in the present paper including the use of linear and nonlinear springs to simulate the pin-bearing contact condition. Simulating pin-connected structures within a two-dimensional finite element analysis model using nonlinear spring or gap elements provides an effective way for accurate prediction of the local effective stress state and peak forces.

CMC vane assembly apparatus and method

DOEpatents

Schiavo, Anthony L; Gonzalez, Malberto F; Huang, Kuangwei; Radonovich, David C

2012-10-23

A metal vane core or strut (64) is formed integrally with an outer backing plate (40). An inner backing plate (38) is formed separately. A spring (74) with holes (75) is installed in a peripheral spring chamber (76) on the strut. Inner and outer CMC shroud covers (46, 48) are formed, cured, then attached to facing surfaces of the inner and outer backing plates (38, 40). A CMC vane airfoil (22) is formed, cured, and slid over the strut (64). The spring (74) urges continuous contact between the strut (64) and airfoil (66), eliminating vibrations while allowing differential expansion. The inner end (88) of the strut is fastened to the inner backing plate (38). A cooling channel (68) in the strut is connected by holes (69) along the leading edge of the strut to peripheral cooling paths (70, 71) around the strut. Coolant flows through and around the strut, including through the spring holes.

Particle–hole ring diagrams for fermions in two dimensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaiser, N., E-mail: nkaiser@ph.tum.de

2014-11-15

The set of particle–hole ring diagrams for a many-fermion system in two dimensions is studied. The complex-valued polarization function is derived in detail and shown to be expressible in terms of square-root functions. For a contact-interaction the perturbative contributions to the energy per particle Ē(k{sub f}) are calculated in a closed analytical form from third up to twelfth order. The resummation of the particle–hole ring diagrams to all orders is studied and a pronounced dependence on the dimensionless coupling parameter α is found. There is a substantial difference between the complete ring-sum with all exchange-type diagrams included and the standardmore » resummation of the leading n-ring diagrams only. The spin factor S{sub n}(g) associated to the nth order ring diagrams is derived for arbitrary spin-degeneracy g.« less

Two stage serial impingement cooling for isogrid structures

DOEpatents

Lee, Ching-Pang; Morrison, Jay A.

2014-09-09

A system for cooling a wall (24) of a component having an outer surface with raised ribs (12) defining a structural pocket (10), including: an inner wall (26) within the structural pocket and separating the wall outer surface within the pocket into a first region (28) outside of the inner wall and a second region (40) enclosed by the inner wall; a plate (14) disposed atop the raised ribs and enclosing the structural pocket, the plate having a plate impingement hole (16) to direct cooling air onto an impingement cooled area (38) of the first region; a cap having a skirt (50) in contact with the inner wall, the cap having a cap impingement hole (20) configured to direct the cooling air onto an impingement cooled area (44) of the second region, and; a film cooling hole (22) formed through the wall in the second region.

Agrilus auroguttatus exit hole distributions on Quercus agrifolia boles and a sampling method to estimate their density on individual trees

Treesearch

Laurel J. Haavik; Tom W. Coleman; Mary Louise Flint; Robert C. Venette; Steven J. Seybold

2012-01-01

In recent decades, invasive phloem and wood borers have become important pests in North America. To aid tree sampling and survey efforts for the newly introduced goldspotted oak borer, Agrilus auroguttatus Schaeffer (Coleoptera: Buprestidae), we examined spatial patterns of exit holes on the boles (trunks) of 58 coast live oak, Quercus...

Infrared broadband metasurface absorber for reducing the thermal mass of a microbolometer.

PubMed

Jung, Joo-Yun; Song, Kyungjun; Choi, Jun-Hyuk; Lee, Jihye; Choi, Dae-Geun; Jeong, Jun-Ho; Neikirk, Dean P

2017-03-27

We demonstrate an infrared broadband metasurface absorber that is suitable for increasing the response speed of a microbolometer by reducing its thermal mass. A large fraction of holes are made in a periodic pattern on a thin lossy metal layer characterised with a non-dispersive effective surface impedance. This can be used as a non-resonant metasurface that can be integrated with a Salisbury screen absorber to construct an absorbing membrane for a microbolometer that can significantly reduce the thermal mass while maintaining high infrared broadband absorption in the long wavelength infrared (LWIR) band. The non-dispersive effective surface impedance can be matched to the free space by optimising the surface resistance of the thin lossy metal layer depending on the size of the patterned holes by using a dc approximation method. In experiments a high broadband absorption was maintained even when the fill factor of the absorbing area was reduced to 28% (hole area: 72%), and it was theoretically maintained even when the fill factor of the absorbing area was reduced to 19% (hole area: 81%). Therefore, a metasurface with a non-dispersive effective surface impedance is a promising solution for reducing the thermal mass of infrared microbolometer pixels.

Vitreomacular Changes after Intravitreal Gas Injection for Idiopathic Impending or Early Macular Hole: An Optical Coherence Tomography Study.

PubMed

Tew, Teck-Boon; Chen, Ta-Ching; Yang, Chang-Hao; Yang, Chung-May

2018-01-01

To study the early changes of vitreomacular microstructure by optical coherence tomography (OCT) after intravitreal gas injection for the treatment of idiopathic impending or early full-thickness macular hole (FTMH). A retrospective, interventional case series. A total of 21 eyes were included. In the impending macular hole, 8/8 achieved vitreomacular traction (VMT) release, while a macular hole developed in 1 case. On postoperative day 1, the vitreomacular configuration by OCT showed either a flattening (n = 3) or elevation (n = 1) pattern. In early FTMH, vitreomacular separation was achieved in 10/13 cases, but macular hole closure was only observed in 3 cases. On postoperative day 1, only flattening of the vitreomacular configuration was observed (n = 5). Enlargement of the macular hole was found in 4 cases. VMT separation can be achieved with intravitreal gas injection by mechanically stretching the posterior vitreous cortex, causing either flattening or steepening of the vitreomacular configuration. However, it did not always result in macular hole closure. © 2017 S. Karger AG, Basel.

Pattern Laser Annealing by a Pulsed Laser

NASA Astrophysics Data System (ADS)

Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

1981-10-01

Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

A Three-Dimensional Coupled Internal/External Simulation of a Film-Cooled Turbine Vane

NASA Technical Reports Server (NTRS)

Heidmann, James D.; Rigby, David L.; Ameri, Ali A.

1999-01-01

A three-dimensional Navier-Stokes simulation has been performed for a realistic film-cooled turbine vane using the LeRC-HT code. The simulation includes the flow regions inside the coolant plena and film cooling holes in addition to the external flow. The vane is the subject of an upcoming NASA Glenn Research Center experiment and has both circular cross-section and shaped film cooling holes. This complex geometry is modeled using a multi-block grid which accurately discretizes the actual vane geometry including shaped holes. The simulation matches operating conditions for the planned experiment and assumes periodicity in the spanwise direction on the scale of one pitch of the film cooling hole pattern. Two computations were performed for different isothermal wall temperatures, allowing independent determination of heat transfer coefficients and film effectiveness values. The results indicate separate localized regions of high heat transfer coefficient values, while the shaped holes provide a reduction in heat flux through both parameters. Hole exit data indicate rather simple skewed profiles for the round holes, but complex profiles for the shaped holes with mass fluxes skewed strongly toward their leading edges.

Carrier-selective interlayer materials for silicon solar cell contacts

NASA Astrophysics Data System (ADS)

Xue, Muyu; Islam, Raisul; Chen, Yusi; Chen, Junyan; Lu, Ching-Ying; Mitchell Pleus, A.; Tae, Christian; Xu, Ke; Liu, Yi; Kamins, Theodore I.; Saraswat, Krishna C.; Harris, James S.

2018-04-01

This work presents titanium oxide (TiOx) and nickel oxide (NiOx) as promising carrier-selective interlayer materials for metal-interlayer-semiconductor contacts for silicon solar cells. The electron-conducting, hole-blocking behavior of TiOx and the opposite carrier-selective behavior of NiOx are investigated using the transmission-line-method. The Fermi level depinning effect and the tunneling resistance are demonstrated to be dependent on the interlayer oxide thickness and annealing temperature. NiOx is furthermore experimentally demonstrated to be capable of improving the effective minority carrier lifetime by quasi-steady-state photoconductance method. Our study demonstrates that TiOx and NiOx can be effective carrier-selective materials for Si solar cells and provides a framework for characterizing carrier-selective contacts.

The Sea-Floor Mapping Facility at the U.S. Geological Survey Woods Hole Field Center, Woods Hole, Massachusetts

USGS Publications Warehouse

Deusser, Rebecca E.; Schwab, William C.; Denny, Jane F.

2002-01-01

Researchers of the sea-floor mapping facility at the U.S. Geological Survey (USGS) Woods Hole Field Center in Woods Hole, Mass., use state-of-the-art technology to produce accurate geologic maps of the sea floor. In addition to basic bathymetry and morphology, sea-floor maps may contain information about the distribution of sand resources, patterns of coastal erosion, pathways of pollutant transport, and geologic controls on marine biological habitats. The maps may also show areas of human impacts, such as disturbance by bottom fishing and pollution caused by offshore waste disposal. The maps provide a framework for scientific research and provide critical information to decisionmakers who oversee resources in the coastal ocean.

``Coffee-ring'' patterns of polymer droplets

NASA Astrophysics Data System (ADS)

Biswas, Nupur; Datta, Alokmay

2013-02-01

Dried droplets of polymer solutions carries the self-assembly behavior of polymer molecules by forming various patterns. Pattern formation is a consequence of deposition of molecules depending on motion of the contact line during the drying process. The contact line motion depends on initial polymer concentrations and hence entanglement. Thus depending on entanglement the patterns represent the `particle' like or `collective' behavior of polymer molecules.

Active tactile sampling by an insect in a step-climbing paradigm

PubMed Central

Krause, André F.; Dürr, Volker

2012-01-01

Many insects actively explore their near-range environment with their antennae. Stick insects (Carausius morosus) rhythmically move their antennae during walking and respond to antennal touch by repetitive tactile sampling of the object. Despite its relevance for spatial orientation, neither the spatial sampling patterns nor the kinematics of antennation behavior in insects are understood. Here we investigate unrestrained bilateral sampling movements during climbing of steps. The main objectives are: (1) How does the antennal contact pattern relate to particular object features? (2) How are the antennal joints coordinated during bilateral tactile sampling? We conducted motion capture experiments on freely climbing insects, using steps of different height. Tactile sampling was analyzed at the level of antennal joint angles. Moreover, we analyzed contact patterns on the surfaces of both the obstacle and the antenna itself. Before the first contact, both antennae move in a broad, mostly elliptical exploratory pattern. After touching the obstacle, the pattern switches to a narrower and faster movement, caused by higher cycle frequencies and lower cycle amplitudes in all joints. Contact events were divided into wall- and edge-contacts. Wall contacts occurred mostly with the distal third of the flagellum, which is flexible, whereas edge contacts often occurred proximally, where the flagellum is stiff. The movement of both antennae was found to be coordinated, exhibiting bilateral coupling of functionally analogous joints [e.g., left head-scape (HS) joint with right scape-pedicel (SP) joint] throughout tactile sampling. In comparison, bilateral coupling between homologous joints (e.g., both HS joints) was significantly weaker. Moreover, inter-joint coupling was significantly weaker during the contact episode than before. In summary, stick insects show contact-induced changes in frequency, amplitude and inter-joint coordination during tactile sampling of climbed obstacles. PMID:22754513

Host contact and shedding patterns clarify variation in pathogen exposure and transmission in threatened tortoise Gopherus agassizii: implications for disease modelling and management

USGS Publications Warehouse

Aiello, Christina M.; Nussear, Kenneth E.; Esque, Todd C.; Emblidge, Patrick G.; Sah, Pratha; Bansal, Shweta; Hudson, Peter J.

2016-01-01

Mean field models may misrepresent natural transmission patterns in this and other populations depending on the distribution of high-risk contact and shedding events. Rapid outbreaks in generally solitary species may result from changes to their naturally low-risk contact patterns or due to increases in the frequency of severe infections or super-shedding events – population characteristics that should be further investigated to develop effective management strategies.

Contact resistance improvement by the modulation of peripheral length to area ratio of graphene contact pattern

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Chunhum; Lee, Sangchul; Lee, Sang Kyung

2015-05-25

High contact resistance between graphene and metal is a major huddle for high performance electronic device applications of graphene. In this work, a method to improve the contact resistance of graphene is investigated by varying the ratio of peripheral length and area of graphene pattern under a metal contact. The contact resistance decreased to 0.8 kΩ·μm from 2.1 kΩ·μm as the peripheral length increased from 312 to 792 μm. This improvement is attributed to the low resistivity of edge-contacted graphene, which is 8.1 × 10{sup 5} times lower than that of top-contacted graphene.

Comparison of self-reported and observed water contact in an S. mansoni endemic village in Brazil.

PubMed

Friedman, J F; Kurtis, J D; McGarvey, S T; Fraga, A L; Silveira, A; Pizziolo, V; Gazzinelli, G; LoVerde, P; Corrêa-Oliveira, R

2001-03-30

Estimates of exposure are critical for immuno-epidemiologic and intervention studies in human schistosomiasis. Direct observation of human water contact patterns is both costly and time consuming. To address these issues, we determined whether individuals residing in a Schistosoma mansoni endemic village in Brazil could accurately self-report their water contact patterns. We compared the results of a water contact questionnaire to the present gold standard, direct observation of water contact in 86 volunteers, aged 8--29. We administered a survey to estimate volunteers' frequency and type of water contact and directly measured each volunteers' water contact patterns during 5 weeks of detailed water contact observations. We found a poor correlation between self reported frequency of contact and directly observed exposure (rho=0.119, P=NS). The questionnaire data was supplemented by information about average body surface area of exposure and duration of contact for specific activities derived from observations of this cohort. This 'supplemented questionnaire' data was significantly correlated with their exposure index (rho=0.227, P=0.05). It provides a starting point from which questionnaires may develop to provide a more cost-effective and less labor intensive method of assessing water contact exposure at the level of the individual.

Experimental and numerical study of Bondura® 6.6 PIN joints

NASA Astrophysics Data System (ADS)

Berkani, I.; Karlsen, Ø.; Lemu, H. G.

2017-12-01

Pin joints are widely used in heavy-duty machinery such as aircrafts, cranes and offshore drilling equipment to transfer multi-dimensional shear forces. Their strength and service life depend on the clamping force in the contact region that is provided by interference fits. Though the interference fits provide full contact at the pin-hole interface under pretension loads, the contact interface reduces when the pin is subjected to an external load and hence a smaller contact surface leads to dramatic increase of the contact stress. The PIN joint of Bondura® Technology, investigated in this study, is an innovative solution intended to reduce the slack at the contact surface of the pin joint of heavy-duty machinery by using tapered sleeves on each end of the PIN. The study is aimed to better understand the contact pressure build-up and stress distribution in the supporting contact surface under pre-loading of the joint and the influence of temperature difference between part assembly and operation conditions. Numerical simulation using finite element method and diverse experimental tests were conducted. The numerical simulation and the test results, particularly the tests conducted with lubricated joints, show good conformance.

Performance of Railway Sleepers with Holes under Impact Loading

NASA Astrophysics Data System (ADS)

Lim, Chie Hong; Kaewunruen, Sakdirat; Mlilo, Nhlanganiso

2017-12-01

Prestressed concrete sleepers are essential structural components of railway track structures, with the purpose of redistributing wheel loads from the rails to the ground. To facilitate cables and signalling equipment, holes are often generated in these prestressed concrete sleepers. However, the performance of these sleepers under impact loading may be a concern with the addition of these holes. Numerical modelling using finite element analysis (FEA) is an ideal tool that enables static and dynamic simulation and can perform analyses of basic/advanced linear and nonlinear problems, without incurring a huge cost in resources like standard experimental test methods would. This paper will utilize the three-dimensional FE modelling software ABAQUS to investigate the behaviour of the prestressed concrete sleepers with holes of varying sizes upon impact loading. To obtain the results that resemble real-life behaviour of the sleepers under impact loading, the material properties, element types, mesh sizes, contact and interactions and boundary conditions will be defined as accurately as possible. Both Concrete Damaged Plasticity (CDP) and Brittle Cracking models will be used in this study. With a better understanding of how the introduction of holes will influence the performance of prestressed sleepers under impact loading, track and railway engineers will be able to generate them in prestressed concrete sleepers without compromising the sleepers’ performance during operation

Giant electron-hole transport asymmetry in ultra-short quantum transistors.

PubMed

McRae, A C; Tayari, V; Porter, J M; Champagne, A R

2017-05-31

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies η e-h . This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η e-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

GPU based 3D feature profile simulation of high-aspect ratio contact hole etch process under fluorocarbon plasmas

NASA Astrophysics Data System (ADS)

Chun, Poo-Reum; Lee, Se-Ah; Yook, Yeong-Geun; Choi, Kwang-Sung; Cho, Deog-Geun; Yu, Dong-Hun; Chang, Won-Seok; Kwon, Deuk-Chul; Im, Yeon-Ho

2013-09-01

Although plasma etch profile simulation has been attracted much interest for developing reliable plasma etching, there still exist big gaps between current research status and predictable modeling due to the inherent complexity of plasma process. As an effort to address this issue, we present 3D feature profile simulation coupled with well-defined plasma-surface kinetic model for silicon dioxide etching process under fluorocarbon plasmas. To capture the realistic plasma surface reaction behaviors, a polymer layer based surface kinetic model was proposed to consider the simultaneous polymer deposition and oxide etching. Finally, the realistic plasma surface model was used for calculation of speed function for 3D topology simulation, which consists of multiple level set based moving algorithm, and ballistic transport module. In addition, the time consumable computations in the ballistic transport calculation were improved drastically by GPU based numerical computation, leading to the real time computation. Finally, we demonstrated that the surface kinetic model could be coupled successfully for 3D etch profile simulations in high-aspect ratio contact hole plasma etching.

High-performance multilayer WSe 2 field-effect transistors with carrier type control

DOE PAGES

Pudasaini, Pushpa Raj; Oyedele, Akinola; Zhang, Cheng; ...

2017-07-06

In this paper, high-performance multilayer WSe 2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe 2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe 2 thickness. The carrier type evolves with increasing WSe 2 channel thickness, being p-type, ambipolar, and n-type at thicknesses <3, ~4, and >5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe 2 as a function of the thickness and the carrier band offsets relative to the metalmore » contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. Finally, this work demonstrates progress towards the realization of high-performance multilayer WSe 2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.« less

Use of two-dimensional transmission photoelastic models to study stresses in double-lap bolted joints

NASA Technical Reports Server (NTRS)

Hyer, M. W.; Liu, D. H.

1981-01-01

The stress distribution in two hole connectors in a double lap joint configuration was studied. The following steps are described: (1) fabrication of photoelastic models of double lap double hole joints designed to determine the stresses in the inner lap; (2) assessment of the effects of joint geometry on the stresses in the inner lap; and (3) quantification of differences in the stresses near the two holes. The two holes were on the centerline of the joint and the joints were loaded in tension, parallel to the centerline. Acrylic slip fit pins through the holes served as fasteners. Two dimensional transmission photoelastic models were fabricated by using transparent acrylic outer laps and a photoelastic model material for the inner laps. It is concluded that the photoelastic fringe patterns which are visible when the models are loaded are due almost entirely to stresses in the inner lap.

NDI method to locate intergranular corrosion around fastener holes in aluminum wing skins

NASA Astrophysics Data System (ADS)

Rutherford, Paul S.

1998-03-01

Contact between galvanically dissimilar metals, such as cadmium plated steel fasteners and aluminum wing skins are known to be a source of corrosion. There is a design requirement to fill the void between the contacting surfaces of steel fasteners with a wet sealant. However, if the contacting surface is damaged or a void exists between the fastener head and the aluminum skin, moisture can collect and intergranular corrosion may occur along aluminum grain boundaries, which run parallel to the surface of the wing skin. If intergranular corrosion is allowed to propagate, delamination of the thin layers of aluminum, known as exfoliation corrosion will occur. When this intergranular corrosion reaches an exfoliated state, extensive rework is involved in removing the corrosion. This paper discusses the results of a USAF E-3A Engineering Service Task 89-E3B3-16 to develop a nondestructive inspection procedure to detect intergranular corrosion in an incipient state before it reaches exfoliation. Eddy current and ultrasonic inspection techniques were evaluated. A novel ultrasonic pulse echo technique was developed which utilizes a focus transducer with a hand held fixture. Inspections were performed on test parts which were removed from the upper wing skin of a retired 707 which had varying degrees of intergranular and exfoliation corrosion. Inspection results are compared to the results from the mechanical rework of the wing skin and dissection of a wing skin fastener hole.

Amplitude-phase characteristics of electromagnetic fields diffracted by a hole in a thin film with realistic optical properties

NASA Astrophysics Data System (ADS)

Dorofeyev, Illarion

2009-03-01

Characteristics of a quasi-spherical wave front of an electromagnetic field diffracted by a subwavelength hole in a thin film with real optical properties are studied. Related diffraction problem is solved in general by use of the scalar and vector Green's theorems and related Green's function of a boundary-value problem. Local phase deviations of a diffracted wave front from an ideal spherical front are calculated. Diffracted patterns are calculated for the coherent incident fields in case of holes array in a screen of perfect conductivity.

Stresses in pin-loaded orthotropic plates using photoelasticity

NASA Technical Reports Server (NTRS)

Hyer, M. W.; Liu, D.

1984-01-01

The stresses in transparent glass-epoxy plates loaded by a steel pin through a hole were determined by photoelasticity. The stresses around the hole edge, across the net section, along the shear out line, and on the centerline below the hole for quasiisotropic, unidirectional, and angle ply plates are outlined. Stresses in an isotropic comparison specimen are also presented. Stress concentration factors for several locations around the plates are tabulated. The experimental apparatus and the experimental technique are discussed. The isochromatic and isoclinic fringe patterns for the four plates are shown. A description of the necessary photoelastic theory is appended.

Electropalatographic Assessment of Tongue-to-Palate Contact Patterns and Variability in Children, Adolescents, and Adults

ERIC Educational Resources Information Center

Cheng, Hei Yan; Murdoch, Bruce E.; Goozee, Justine V.; Scott, Dion

2007-01-01

Purpose: To investigate the developmental time course of tongue-to-palate contact patterns during speech from childhood to adulthood using electropalatography (EPG) and a comprehensive profile of data analysis. Method: Tongue-to-palate contacts were recorded during productions of /t/, /l/, /s/, and /k/ in 48 children, adolescents and adults (aged…

Periodic dielectric structure for production of photonic band gap and method for fabricating the same

DOEpatents

Ozbay, Ekmel; Tuttle, Gary; Michel, Erick; Ho, Kai-Ming; Biswas, Rana; Chan, Che-Ting; Soukoulis, Costas

1995-01-01

A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.

In vitro assessment of the contact mechanics of reverse-engineered distal humeral hemiarthroplasty prostheses.

PubMed

Willing, Ryan; Lapner, Michael; King, Graham J W; Johnson, James A

2014-11-01

Distal humeral hemiarthroplasty alters cartilage contact mechanics, which may predispose to osteoarthritis. Current prostheses do not replicate the native anatomy, and therefore contribute to these changes. We hypothesized that prostheses reverse-engineered from the native bone shape would provide similar contact patterns as the native articulation. Reverse-engineered hemiarthroplasty prostheses were manufactured for five cadaveric elbows based on CT images of the distal humerus. Passive flexion trials with constant muscle forces were performed with the native articulation intact while bone motions were recorded using a motion tracking system. Motion trials were then repeated after the distal humerus was replaced with a corresponding reverse-engineered prosthesis. Contact areas and patterns were reconstructed using computer models created from CT scan images combined with the motion tracker data. The total contact areas, as well as the contact area within smaller sub-regions of the ulna and radius, were analyzed for changes resulting from hemiarthroplasty using repeated-measures ANOVAs. Contact area at the ulna and radius decreased on average 42% (SD 19%, P=.008) and 41% (SD 42%, P=.096), respectively. Contact area decreases were not uniform throughout the different sub-regions, suggesting that contact patterns were also altered. Reverse-engineered prostheses did not reproduce the same contact pattern as the native joints, possibly because the thickness of the distal humerus cartilage layer was neglected when generating the prosthesis shapes or as a consequence of the increased stiffness of the metallic implants. Alternative design strategies and materials for hemiarthroplasty should be considered in future work. Copyright © 2014 Elsevier Ltd. All rights reserved.

3D-printed coded apertures for x-ray backscatter radiography

NASA Astrophysics Data System (ADS)

Muñoz, André A. M.; Vella, Anna; Healy, Matthew J. F.; Lane, David W.; Jupp, Ian; Lockley, David

2017-09-01

Many different mask patterns can be used for X-ray backscatter imaging using coded apertures, which can find application in the medical, industrial and security sectors. While some of these patterns may be considered to have a self-supporting structure, this is not the case for some of the most frequently used patterns such as uniformly redundant arrays or any pattern with a high open fraction. This makes mask construction difficult and usually requires a compromise in its design by drilling holes or adopting a no two holes touching version of the original pattern. In this study, this compromise was avoided by 3D printing a support structure that was then filled with a radiopaque material to create the completed mask. The coded masks were manufactured using two different methods, hot cast and cold cast. Hot casting involved casting a bismuth alloy at 80°C into the 3D printed acrylonitrile butadiene styrene mould which produced an absorber with density of 8.6 g cm-3. Cold casting was undertaken at room temperature, when a tungsten/epoxy composite was cast into a 3D printed polylactic acid mould. The cold cast procedure offered a greater density of around 9.6 to 10 g cm-3 and consequently greater X-ray attenuation. It was also found to be much easier to manufacture and more cost effective. A critical review of the manufacturing procedure is presented along with some typical images. In both cases the 3D printing process allowed square apertures to be created avoiding their approximation by circular holes when conventional drilling is used.

Patterned synthesis of ZnO nanorod arrays for nanoplasmonic waveguide applications

NASA Astrophysics Data System (ADS)

Lamson, Thomas L.; Khan, Sahar; Wang, Zhifei; Zhang, Yun-Kai; Yu, Yong; Chen, Zhe-Sheng; Xu, Huizhong

2018-03-01

We report the patterned synthesis of ZnO nanorod arrays of diameters between 50 nm and 130 nm and various spacings. This was achieved by patterning hole arrays in a polymethyl methacrylate layer with electron beam lithography, followed by chemical synthesis of ZnO nanorods in the patterned holes using the hydrothermal method. The fabrication of ZnO nanorod waveguide arrays is also demonstrated by embedding the nanorods in a silver film using the electroplating process. Optical transmission measurement through the nanorod waveguide arrays is performed and strong resonant transmission of visible light is observed. We have found the resonance shifts to a longer wavelength with increasing nanorod diameter. Furthermore, the resonance wavelength is independent of the nanowaveguide array period, indicating the observed resonant transmission is the effect of a single ZnO nanorod waveguide. These nanorod waveguides may be used in single-molecule imaging and sensing as a result of the nanoscopic profile of the light transmitted through the nanorods and the controlled locations of these nanoscale light sources.

Efficient and Air-Stable Planar Perovskite Solar Cells Formed on Graphene-Oxide-Modified PEDOT:PSS Hole Transport Layer

NASA Astrophysics Data System (ADS)

Luo, Hui; Lin, Xuanhuai; Hou, Xian; Pan, Likun; Huang, Sumei; Chen, Xiaohong

2017-10-01

As a hole transport layer, PEDOT:PSS usually limits the stability and efficiency of perovskite solar cells (PSCs) due to its hygroscopic nature and inability to block electrons. Here, a graphene-oxide (GO)-modified PEDOT:PSS hole transport layer was fabricated by spin-coating a GO solution onto the PEDOT:PSS surface. PSCs fabricated on a GO-modified PEDOT:PSS layer exhibited a power conversion efficiency (PCE) of 15.34%, which is higher than 11.90% of PSCs with the PEDOT:PSS layer. Furthermore, the stability of the PSCs was significantly improved, with the PCE remaining at 83.5% of the initial PCE values after aging for 39 days in air. The hygroscopic PSS material at the PEDOT:PSS surface was partly removed during spin-coating with the GO solution, which improves the moisture resistance and decreases the contact barrier between the hole transport layer and perovskite layer. The scattered distribution of the GO at the PEDOT:PSS surface exhibits superior wettability, which helps to form a high-quality perovskite layer with better crystallinity and fewer pin holes. Furthermore, the hole extraction selectivity of the GO further inhibits the carrier recombination at the interface between the perovskite and PEDOT:PSS layers. Therefore, the cooperative interactions of these factors greatly improve the light absorption of the perovskite layer, the carrier transport and collection abilities of the PSCs, and especially the stability of the cells.

Multiple burr hole surgery as a treatment modality for pediatric moyamoya disease

PubMed Central

Kapu, Ravindranath; Symss, Nigel Peter; Cugati, Goutham; Pande, Anil; Vasudevan, Chakravarthy M.; Ramamurthi, Ravi

2010-01-01

Objective: To re-emphasize that indirect revascularization surgery alone, where multiple burr holes and arachnoid openings are made over both cerebral hemispheres, is beneficial in the treatment of moyamoya disease (MMD) in children. Clinical Presentation: We report a 10-year-old boy who presented with complaints of episodic headache for the last 5 years. At the peak of his headache he had visual disturbances and acute onset weakness of left-sided limbs, recovering within a few minutes. He had no focal neurological deficits. Radiological investigations revealed abnormal findings, demonstrating the features of MMD. Surgical Management: He underwent bilateral multiple burr holes, dural and arachnoid opening over the frontal, parietal and temporal regions of each hemisphere. The elevated periosteal flap was placed in contact with the exposed brain through each burr hole. Results: On 6-months follow-up he had only one episode of transient ischemic attack. Postoperative four vessel angiogram demonstrated excellent cerebral revascularization around the burr hole sites, and single photon emission computerized tomography imaging showed hypoperfusion in the right temporo-occipital area suggestive of an old infarct with no other perfusion defect in the rest of the brain parenchyma. Conclusion: In children with MMD this relatively simple surgical technique is effective and safe, and can be used as the only treatment without supplementary revascularization procedures. This procedure can be done in a single stage on both sides and the number of burr holes made over each hemisphere depends on the extent of the disease. PMID:21559155

Model-based guiding pattern synthesis for robust assembly of contact layers using directed self-assembly

NASA Astrophysics Data System (ADS)

Mitra, Joydeep; Torres, Andres; Ma, Yuansheng; Pan, David Z.

2018-01-01

Directed self-assembly (DSA) has emerged as one of the most compelling next-generation patterning techniques for sub 7 nm via or contact layers. A key issue in enabling DSA as a mainstream patterning technique is the generation of grapho-epitaxy-based guiding pattern (GP) shapes to assemble the contact patterns on target with high fidelity and resolution. Current GP generation is mostly empirical, and limited to a very small number of via configurations. We propose the first model-based GP synthesis algorithm and methodology for on-target and robust DSA, on general via pattern configurations. The final postoptical proximity correction-printed GPs derived from our original synthesized GPs are resilient to process variations and continue to maintain the same DSA fidelity in terms of placement error and target shape.

Microstructured optical fiber photonic wires with subwavelength core diameter.

PubMed

Lizé, Yannick; Mägi, Eric; Ta'eed, Vahid; Bolger, Jeremy; Steinvurzel, Paul; Eggleton, Benjamin

2004-07-12

We demonstrate fabrication of robust, low-loss silica photonic wires using tapered microstructured silica optical fiber. The fiber is tapered by a factor of fifty while retaining the internal structure and leaving the air holes completely open. The air holes isolate the core mode from the surrounding environment, making it insensitive to surface contamination and contact leakage, suggesting applications as nanowires for photonic circuits . We describe a transition between two different operation regimes of our photonic wire from the embedded regime, where the mode is isolated from the environment, to the evanescent regime, where more than 70% of the mode intensity can propagate outside of the fiber. Interesting dispersion and nonlinear properties are identified.

An unusual characteristic “flower-like” pattern: flash suppressor burns

PubMed Central

Gurcan, Altun

2012-01-01

The case on contact shots from firearms with a flash suppressor is rare. When a rifle fitted with a flash suppressor is fired, the emerging soot-laden gas in the barrel escapes from the slits of the flash suppressor. If the shot is contact or near contact, the flash suppressor will produce a characteristic “flower-like” pattern of seared, blackened zones around the entrance. This paper presents the injury pattern of the flash suppressor in a 29-year-old man who committed suicide with a G3 automatic infantry rifle. PMID:23935280

An unusual characteristic "flower-like" pattern: flash suppressor burns.

PubMed

Gurcan, Altun

2012-04-01

The case on contact shots from firearms with a flash suppressor is rare. When a rifle fitted with a flash suppressor is fired, the emerging soot-laden gas in the barrel escapes from the slits of the flash suppressor. If the shot is contact or near contact, the flash suppressor will produce a characteristic "flower-like" pattern of seared, blackened zones around the entrance. This paper presents the injury pattern of the flash suppressor in a 29-year-old man who committed suicide with a G3 automatic infantry rifle.

Discrimination of chemical vapor and temperature using an in-line modal interferometer based on an exterior hole-assisted polarization-maintaining photonic crystal fiber

NASA Astrophysics Data System (ADS)

Yoon, Min-Seok; Jun, Naram; Lee, Sang Bae; Han, Young-Geun

2014-05-01

A reflective in-line modal interferometer based on a polarization-maintaining photonic crystal fiber (PM-PCF) with two exterior air holes is proposed for simultaneous measurement of chemical vapor and temperature. After fusion-splicing the PM-PCF with a standard single-mode fiber, we collapse all of air holes in the PM-PCF resulting in two types of interference patterns between the core and the cladding modes in the PM-PCF depending on two polarization states. Since two large air holes at the facet of the proposed modal interferometer are left open, a chemical vapor can be infiltrated into the voids. Different sensitivities corresponding to input polarization states are utilized for discrimination between chemical vapor and temperature sensitivities.

Geology of drill hole UE25p No. 1: A test hole into pre-Tertiary rocks near Yucca Mountain, southern Nevada

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carr, M.D.; Waddell, S.J.; Vick, G.S.

1986-12-31

Yucca Mountain in southern Nye County, Nevada, has been proposed as a potential site for the underground disposal of high-level nuclear waste. An exploratory drill hole designated UE25p No. 1 was drilled 3 km east of the proposed repository site to investigate the geology and hydrology of the rocks that underlie the Tertiary volcanic and sedimentary rock sequence forming Yucca Mountain. Silurian dolomite assigned to the Roberts Mountain and Lone Mountain Formations was intersected below the Tertiary section between a depth of approximately 1244 m (4080 ft) and the bottom of the drill hole at 1807 m (5923 ft). Thesemore » formations are part of an important regional carbonate aquifer in the deep ground-water system. Tertiary units deeper than 1139 m (3733 ft) in drill hole UE25p No. 1 are stratigraphically older than any units previously penetrated by drill holes at Yucca Mountain. These units are, in ascending order, the tuff of Yucca Flat, an unnamed calcified ash-flow tuff, and a sequence of clastic deposits. The upper part of the Tertiary sequence in drill hole UE25p No. 1 is similar to that found in other drill holes at Yucca Mountain. The Tertiary sequence is in fault contact with the Silurian rocks. This fault between Tertiary and Paleozoic rocks may correlate with the Fran Ridge fault, a steeply westward-dipping fault exposed approximately 0.5 km east of the drill hole. Another fault intersects UE25p No. 1 at 873 m (2863 ft), but its surface trace is concealed beneath the valley west of the Fran Ridge fault. The Paintbrush Canyon fault, the trace of which passes less than 100 m (330 ft) east of the drilling site, intersects drill hole UE25p No. 1 at a depth of approximately 78 m (255 ft). The drill hole apparently intersected the west flank of a structural high of pre-Tertiary rocks, near the eastern edge of the Crater Flat structural depression.« less

Estimates of Social Contact in a Middle School Based on Self-Report and Wireless Sensor Data.

PubMed

Leecaster, Molly; Toth, Damon J A; Pettey, Warren B P; Rainey, Jeanette J; Gao, Hongjiang; Uzicanin, Amra; Samore, Matthew

2016-01-01

Estimates of contact among children, used for infectious disease transmission models and understanding social patterns, historically rely on self-report logs. Recently, wireless sensor technology has enabled objective measurement of proximal contact and comparison of data from the two methods. These are mostly small-scale studies, and knowledge gaps remain in understanding contact and mixing patterns and also in the advantages and disadvantages of data collection methods. We collected contact data from a middle school, with 7th and 8th grades, for one day using self-report contact logs and wireless sensors. The data were linked for students with unique initials, gender, and grade within the school. This paper presents the results of a comparison of two approaches to characterize school contact networks, wireless proximity sensors and self-report logs. Accounting for incomplete capture and lack of participation, we estimate that "sensor-detectable", proximal contacts longer than 20 seconds during lunch and class-time occurred at 2 fold higher frequency than "self-reportable" talk/touch contacts. Overall, 55% of estimated talk-touch contacts were also sensor-detectable whereas only 15% of estimated sensor-detectable contacts were also talk-touch. Contacts detected by sensors and also in self-report logs had longer mean duration than contacts detected only by sensors (6.3 vs 2.4 minutes). During both lunch and class-time, sensor-detectable contacts demonstrated substantially less gender and grade assortativity than talk-touch contacts. Hallway contacts, which were ascertainable only by proximity sensors, were characterized by extremely high degree and short duration. We conclude that the use of wireless sensors and self-report logs provide complementary insight on in-school mixing patterns and contact frequency.

Estimates of Social Contact in a Middle School Based on Self-Report and Wireless Sensor Data

PubMed Central

Leecaster, Molly; Toth, Damon J. A.; Pettey, Warren B. P.; Rainey, Jeanette J.; Gao, Hongjiang; Uzicanin, Amra; Samore, Matthew

2016-01-01

Estimates of contact among children, used for infectious disease transmission models and understanding social patterns, historically rely on self-report logs. Recently, wireless sensor technology has enabled objective measurement of proximal contact and comparison of data from the two methods. These are mostly small-scale studies, and knowledge gaps remain in understanding contact and mixing patterns and also in the advantages and disadvantages of data collection methods. We collected contact data from a middle school, with 7th and 8th grades, for one day using self-report contact logs and wireless sensors. The data were linked for students with unique initials, gender, and grade within the school. This paper presents the results of a comparison of two approaches to characterize school contact networks, wireless proximity sensors and self-report logs. Accounting for incomplete capture and lack of participation, we estimate that “sensor-detectable”, proximal contacts longer than 20 seconds during lunch and class-time occurred at 2 fold higher frequency than “self-reportable” talk/touch contacts. Overall, 55% of estimated talk-touch contacts were also sensor-detectable whereas only 15% of estimated sensor-detectable contacts were also talk-touch. Contacts detected by sensors and also in self-report logs had longer mean duration than contacts detected only by sensors (6.3 vs 2.4 minutes). During both lunch and class-time, sensor-detectable contacts demonstrated substantially less gender and grade assortativity than talk-touch contacts. Hallway contacts, which were ascertainable only by proximity sensors, were characterized by extremely high degree and short duration. We conclude that the use of wireless sensors and self-report logs provide complementary insight on in-school mixing patterns and contact frequency. PMID:27100090

Immersed finger-type indium tin oxide ohmic contacts on p-GaN photoelectrodes for photoelectrochemical hydrogen generation.

PubMed

Liu, Shu-Yen; Sheu, J K; Lee, M L; Lin, Yu-Chuan; Tu, S J; Huang, F W; Lai, W C

2012-03-12

In this study, we demonstrated photoelectrochemical (PEC) hydrogen generation using p-GaN photoelectrodes associated with immersed finger-type indium tin oxide (IF-ITO) ohmic contacts. The IF-ITO/p-GaN photoelectrode scheme exhibits higher photocurrent and gas generation rate compared with p-GaN photoelectrodes without IF-ITO ohmic contacts. In addition, the critical external bias for detectable hydrogen generation can be effectively reduced by the use of IF-ITO ohmic contacts. This finding can be attributed to the greatly uniform distribution of the IF-ITO/p-GaN photoelectrode applied fields over the whole working area. As a result, the collection efficiency of photo-generated holes by electrode contacts is higher than that of p-GaN photoelectrodes without IF-ITO contacts. Microscopy revealed a tiny change on the p-GaN surfaces before and after hydrogen generation. In contrast, photoelectrodes composed of n-GaN have a short lifetime due to n-GaN corrosion during hydrogen generation. Findings of this study indicate that the ITO finger contacts on p-GaN layer is a potential candidate as photoelectrodes for PEC hydrogen generation.

Improving the ohmic properties of contacts to P-GaN by adding p-type dopants into the metallization layer

NASA Astrophysics Data System (ADS)

Liday, Jozef; Vogrinčič, Peter; Vincze, Andrej; Breza, Juraj; Hotový, Ivan

2012-12-01

The work investigates an increase of the density of free charge carriers in the sub-surface region of p-GaN by adding p-type dopants into the Ni-O layer of an Au/Ni-O metallization structure. We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-O/p-GaN and Au/Ni-Zn-O/p-GaN, thus with magnesium and zinc as p-type dopants. The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with a low concentration of oxygen (0.2 at%). The contacts were annealed in N2 . We have found that the structures containing magnesium or zinc exhibit lower values of contact resistivity in comparison with otherwise identical contacts without Mg or Zn dopants. In our opinion, the lower values of contact resistivity of the structures containing of Mg or Zn are caused by an increased density of holes in the sub-surface region of p-GaN due to diffusion of Mg or Zn from the deposited doped contact layers.

A novel algorithm for a precise analysis of subchondral bone alterations

PubMed Central

Gao, Liang; Orth, Patrick; Goebel, Lars K. H.; Cucchiarini, Magali; Madry, Henning

2016-01-01

Subchondral bone alterations are emerging as considerable clinical problems associated with articular cartilage repair. Their analysis exposes a pattern of variable changes, including intra-lesional osteophytes, residual microfracture holes, peri-hole bone resorption, and subchondral bone cysts. A precise distinction between them is becoming increasingly important. Here, we present a tailored algorithm based on continuous data to analyse subchondral bone changes using micro-CT images, allowing for a clear definition of each entity. We evaluated this algorithm using data sets originating from two large animal models of osteochondral repair. Intra-lesional osteophytes were detected in 3 of 10 defects in the minipig and in 4 of 5 defects in the sheep model. Peri-hole bone resorption was found in 22 of 30 microfracture holes in the minipig and in 17 of 30 microfracture holes in the sheep model. Subchondral bone cysts appeared in 1 microfracture hole in the minipig and in 5 microfracture holes in the sheep model (n = 30 holes each). Calculation of inter-rater agreement (90% agreement) and Cohen’s kappa (kappa = 0.874) revealed that the novel algorithm is highly reliable, reproducible, and valid. Comparison analysis with the best existing semi-quantitative evaluation method was also performed, supporting the enhanced precision of this algorithm. PMID:27596562

Drill Holes and Predation Traces versus Abrasion-Induced Artifacts Revealed by Tumbling Experiments

PubMed Central

Gorzelak, Przemysław; Salamon, Mariusz A.; Trzęsiok, Dawid; Niedźwiedzki, Robert

2013-01-01

Drill holes made by predators in prey shells are widely considered to be the most unambiguous bodies of evidence of predator-prey interactions in the fossil record. However, recognition of traces of predatory origin from those formed by abiotic factors still waits for a rigorous evaluation as a prerequisite to ascertain predation intensity through geologic time and to test macroevolutionary patterns. New experimental data from tumbling various extant shells demonstrate that abrasion may leave holes strongly resembling the traces produced by drilling predators. They typically represent singular, circular to oval penetrations perpendicular to the shell surface. These data provide an alternative explanation to the drilling predation hypothesis for the origin of holes recorded in fossil shells. Although various non-morphological criteria (evaluation of holes for non-random distribution) and morphometric studies (quantification of the drill hole shape) have been employed to separate biological from abiotic traces, these are probably insufficient to exclude abrasion artifacts, consequently leading to overestimate predation intensity. As a result, from now on, we must adopt more rigorous criteria to appropriately distinguish abrasion artifacts from drill holes, such as microstructural identification of micro-rasping traces. PMID:23505530

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

NASA Astrophysics Data System (ADS)

Okumura, Hironori; Martin, Denis; Grandjean, Nicolas

2016-12-01

Mg-doped GaN with a net acceptor concentration (NA-ND) in the high 1019 cm-3 range was grown using ammonia molecular-beam epitaxy. Electrical properties of NiO contact on this heavily doped p-type GaN were investigated. A potential-barrier height of 0.24 eV was extracted from the relationship between NA-ND and the specific contact resistivity (ρc). We found that there is an optimum NA-ND value of 5 × 1019 cm-3 for which ρc is as low as 2 × 10-5 Ω cm2. This low ρc is ascribed to hole tunneling through the potential barrier at the NiO/p+-GaN interface, which is well accounted for by the field-emission model.

Noncontact Measurement Of Critical Current In Superconductor

NASA Technical Reports Server (NTRS)

Israelsson, Ulf E.; Strayer, Donald M.

1992-01-01

Critical current measured indirectly via flux-compression technique. Magnetic flux compressed into gap between superconductive hollow cylinder and superconductive rod when rod inserted in hole in cylinder. Hall-effect probe measures flux density before and after compression. Method does not involve any electrical contact with superconductor. Therefore, does not cause resistive heating and consequent premature loss of superconductivity.

We'll Meet Again: Revealing Distributional and Temporal Patterns of Social Contact

PubMed Central

Pachur, Thorsten; Schooler, Lael J.; Stevens, Jeffrey R.

2014-01-01

What are the dynamics and regularities underlying social contact, and how can contact with the people in one's social network be predicted? In order to characterize distributional and temporal patterns underlying contact probability, we asked 40 participants to keep a diary of their social contacts for 100 consecutive days. Using a memory framework previously used to study environmental regularities, we predicted that the probability of future contact would follow in systematic ways from the frequency, recency, and spacing of previous contact. The distribution of contact probability across the members of a person's social network was highly skewed, following an exponential function. As predicted, it emerged that future contact scaled linearly with frequency of past contact, proportionally to a power function with recency of past contact, and differentially according to the spacing of past contact. These relations emerged across different contact media and irrespective of whether the participant initiated or received contact. We discuss how the identification of these regularities might inspire more realistic analyses of behavior in social networks (e.g., attitude formation, cooperation). PMID:24475073

Designing of self-deploying origami structures using geometrically misaligned crease patterns.

PubMed

Saito, Kazuya; Tsukahara, Akira; Okabe, Yoji

2016-01-01

Usually, origami-based morphing structures are designed on the premise of 'rigid folding', i.e. the facets and fold lines of origami can be replaced with rigid panels and ideal hinges, respectively. From a structural mechanics viewpoint, some rigid-foldable origami models are overconstrained and have negative degrees of freedom (d.f.). In these cases, the singularity in crease patterns guarantees their rigid foldability. This study presents a new method for designing self-deploying origami using the geometrically misaligned creases. In this method, some facets are replaced by 'holes' such that the systems become a 1-d.f. mechanism. These perforated origami models can be folded and unfolded similar to rigid-foldable (without misalignment) models because of their d.f. focusing on the removed facets, the holes will deform according to the motion of the frame of the remaining parts. In the proposed method, these holes are filled with elastic parts and store elastic energy for self-deployment. First, a new extended rigid-folding simulation technique is proposed to estimate the deformation of the holes. Next, the proposed method is applied on arbitrary-size quadrilateral mesh origami. Finally, by using the finite-element method, the authors conduct numerical simulations and confirm the deployment capabilities of the models.

Site-Specific Pre-Swelling-Directed Morphing Structures of Patterned Hydrogels.

PubMed

Wang, Zhi Jian; Hong, Wei; Wu, Zi Liang; Zheng, Qiang

2017-12-11

Morphing materials have promising applications in various fields, yet how to program the self-shaping process for specific configurations remains a challenge. Herein we show a versatile approach to control the buckling of individual domains and thus the outcome configurations of planar-patterned hydrogels. By photolithography, high-swelling disc gels were positioned in a non-swelling gel sheet; the swelling mismatch resulted in out-of-plain buckling of the disc gels. To locally control the buckling direction, masks with holes were used to guide site-specific swelling of the high-swelling gel under the holes, which built a transient through-thickness gradient and thus directed the buckling during the subsequent unmasked swelling process. Therefore, various configurations of an identical patterned hydrogel can be programmed by the pre-swelling step with different masks to encode the buckling directions of separate domains. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Essential features of residual stress determination in thin-walled plane structures in a base of whole field interferometric measurements

NASA Astrophysics Data System (ADS)

Pisarev, Vladimir S.; Odintsev, I.; Balalov, V.; Apalkov, A.

2003-05-01

Sophisticated technique for reliable quantitative deriving residual stress values from initial experimental data, which are inherent in combined implementing the hole drilling method with both holographic and speckle interferometry, is described in detail. The approach developed includes both possible ways of obtaining initial experimental information. The first of them consists of recording a set of required interference fringe patterns, which are resulted from residual stress energy release after through hole drilling, in two orthogonal directions that coincide with principal strain directions. The second way is obtaining a series of interrelated fringe patterns when a direction of either observation in reflection hologram interferometry or dual-beam illumination in speckle interferometry lies arbitrary with respect to definite principal strain direction. A set of the most typical both actual and analogous reference fringe patterns, which are related to both reflection hologram and dual-beam speckle interferometry, are presented.

Periodic dielectric structure for production of photonic band gap and method for fabricating the same

DOEpatents

Ozbay, E.; Tuttle, G.; Michel, E.; Ho, K.M.; Biswas, R.; Chan, C.T.; Soukoulis, C.

1995-04-11

A method is disclosed for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap. 42 figures.

Axially Tapered And Bilayer Microchannels For Evaporative Cooling Devices

DOEpatents

Nilson, Robert; Griffiths, Stewart

2005-10-04

The invention consists of an evaporative cooling device comprising one or more microchannels whose cross section is axially reduced to control the maximum capillary pressure differential between liquid and vapor phases. In one embodiment, the evaporation channels have a rectangular cross section that is reduced in width along a flow path. In another embodiment, channels of fixed width are patterned with an array of microfabricated post-like features such that the feature size and spacing are gradually reduced along the flow path. Other embodiments incorporate bilayer channels consisting of an upper cover plate having a pattern of slots or holes of axially decreasing size and a lower fluid flow layer having channel widths substantially greater than the characteristic microscale dimensions of the patterned cover plate. The small dimensions of the cover plate holes afford large capillary pressure differentials while the larger dimensions of the lower region reduce viscous flow resistance.

Theoretical insights into the effect of a conjugated core on the hole transport properties of hole-transporting materials for perovskite solar cells.

PubMed

Zhang, Zemin; Hu, Weixia; Cui, Jianyu; He, Rongxing; Shen, Wei; Li, Ming

2017-09-20

Conjugated bifluorenylidene and naphthalene central cores are introduced into hole-transporting materials DT1 and DT2 to replace the spiro-core of the reported, highly efficient FDT. The effects of the conjugated core on the geometrics, electronic properties and hole transport properties are investigated by using density functional theory coupled with Marcus theory and the Einstein relation. The calculated results show that DT1 (-5.21 eV) and DT2 (-5.23 eV) have lower HOMO levels than FDT (-5.15 eV), which indicates that the perovskite solar cells with conjugated hole-transporting materials can have higher open-circuit voltages. The introduction of the conjugated core is beneficial to the more efficient face-to-face packing pattern of the dimer, resulting in a larger intermolecular electronic coupling. Importantly, it is found that DT1 (1.6 × 10 -3 cm 2 V -1 s -1 ) and DT2 (2.7 × 10 -2 cm 2 V -1 s -1 ) exhibit relatively higher hole mobilities than FDT (1.3 × 10 -4 cm 2 V -1 s -1 ) owing to the larger electronic coupling. Therefore, enhanced hole transport ability can be achieved by switching from the spiro-core to the conjugated core. The present work provides a new strategy to improve the hole transport properties of hole-transporting materials, which will contribute to the development of conjugated small molecules as hole-transporting materials in efficient perovskite solar cells.

Patterns of Contact with Hospital for Children with an Autism Spectrum Disorder: A Danish Register-Based Study

ERIC Educational Resources Information Center

Atladottir, Hjordis Osk; Schendel, Diana E.; Lauritsen, Marlene B.; Henriksen, Tine Brink; Parner, Erik T.

2012-01-01

The aim of this study was to study patterns of contact with hospital for children with autism spectrum disorder (ASD) using Danish population based register data. We included all children born in Denmark from 1994 through 2002. We found that children diagnosed with ASD had an increased rate of contact with hospital, almost regardless of the cause…

Development of Low Carbon Niobium Bearing High Strength F-B Dual Phase Steel with High Hole Expansion Property

NASA Astrophysics Data System (ADS)

Zhang, Lin; Xia, Ming-sheng; Xiong, Zi-liu; Du, Yan-bing; Qiao, Zhi-ming; Zhang, Hong-bo

In the study a low carbon niobium bearing high strength F-B dual phase automobile steel with high hole expansion property has been investigated. Steels of different chemical composition have been investigated by simulation experiments of controlled rolling and cooling process to study the influences of chemical elements, especially for C,Nb and Ti, and cooling pattern on the mechanical properties, flangeability and microstructure of strips. So-called 3-stages cooling pattern was adopted in simulation experiments, combining ultra fast cooling in first stage, air cooling in middle stage and fast cooling in the last stage, and at the end of run-out table the temperature of rolled pieces drop to below Bs point. Optical microstructure and SEM morphology have been observed. Results indicate that it is possible to obtain dual phase microstructure of polygonal ferrite plus bainite in adopting 3-stages cooling pattern. The low temperature coiling method using 3-step controlled cooling pattern after hot rolling is effective to produce low carbon Nb bearing steel with high balance of strength-ductility-flangeability, in addition, higher carbon content of steel tend to be detrimental to flangeability of steel, due to much carbide precipitation at ferrite boundary. Based on the results of simulation experiments mill trial has been carried out and hot rolled high strength steel with tensile strength higher as 600Mpa and hole expansion ratio higher as 100% has been developed successfully.

GaN light-emitting device based on ionic liquid electrolyte

NASA Astrophysics Data System (ADS)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Experimental methodology of contact edge roughness on sub-100-nm pattern

NASA Astrophysics Data System (ADS)

Lee, Tae Yong; Ihm, Dongchul; Kang, Hyo Chun; Lee, Jun Bum; Lee, Byoung-Ho; Chin, Soo-Bok; Cho, Do-Hyun; Kim, Yang Hyong; Yang, Ho Dong; Yang, Kyoung Mo

2004-05-01

The measurement of edge roughness has become a hot issue in the semiconductor industry. Major vendors offer a variety of features to measure the edge roughness in their CD-SEMs. However, most of the features are limited by the applicable pattern types. For the line and space patterns, features such as Line Edge Roughness (LER) and Line Width Roughness (LWR) are available in current CD-SEMs. The edge roughness is more critical in contact process. However the measurement of contact edge roughness (CER) or contact space roughness (CSR) is more complicated than that of LER or LWR. So far, no formal standard measurement algorithm or definition of contact roughness measurement exists. In this article, currently available features are investigated to assess their representability for CER or CSR. Some new ideas to quantify CER and CSR were also suggested with preliminary experimental results.

Transition from stripe-like patterns to a particulate film using driven evaporating menisci.

PubMed

Noguera-Marín, Diego; Moraila-Martínez, Carmen L; Cabrerizo-Vílchez, Miguel A; Rodríguez-Valverde, Miguel A

2014-07-01

Better control of colloidal assembly by convective deposition is particularly helpful in particle templating. However, knowledge of the different factors that can alter colloidal patterning mechanisms is still insufficient. Deposit morphology is strongly ruled by contact line dynamics, but the wettability properties of the substrate can alter it drastically. In this work, we experimentally examined the roles of substrate contact angle hysteresis and receding contact angle using driven evaporating menisci similar to the dip-coating technique but at a low capillary number. We used smooth substrates with very different wettability properties and nanoparticles of different sizes. For fixed withdrawal velocity, evaporation conditions, and nanoparticle concentration, we analyzed the morphology of the deposits formed on each substrate. A gradual transition from stripe-like patterns to a film was observed as the contact angle hysteresis and receding contact angle were lowered.

Diffraction of stochastic electromagnetic fields by a hole in a thin film with real optical properties

NASA Astrophysics Data System (ADS)

Dorofeyev, Illarion

2008-08-01

The classical Kirchhoff theory of diffraction is extended to the case of real optical properties of a screen and its finite thickness. A spectral power density of diffracted electromagnetic fields by a hole in a thin film with real optical properties was calculated. The problem was solved by use of the vector Green theorems and related Green function of the boundary value problem. A spectral and spatial selectivity of the considered system was demonstrated. Diffracted patterns were calculated for the coherent and incoherent incident fields in case of holes array in a screen of perfect conductivity.

On the nature of photospheric magnetic fields beneath large coronal holes

NASA Technical Reports Server (NTRS)

Frankenthal, S.; Krieger, A. S.

1977-01-01

Proposed mechanisms for the formation of coronal holes are considered; the crucial issue appears to be whether the holes are permeated by rigidly rotating fields. It is suggested that the interaction between such a field and the differentially rotating, diffusive solar envelope will produce a fore aft asymmetry in the distribution of fields which emerge to the photosphere. An initial study is carried out in the context of an illustrative example, and the results indicate that the asymmetry may be observed for a certain range of parameters involving the properties of the solar envelope and the characteristic size of the emerging field pattern.

Violent flickering in Black Holes

NASA Astrophysics Data System (ADS)

2008-10-01

Unique observations of the flickering light from the surroundings of two black holes provide new insights into the colossal energy that flows at their hearts. By mapping out how well the variations in visible light match those in X-rays on very short timescales, astronomers have shown that magnetic fields must play a crucial role in the way black holes swallow matter. Flickering black hole ESO PR Photo 36/08 Flickering black hole Like the flame from a candle, light coming from the surroundings of a black hole is not constant -- it flares, sputters and sparkles. "The rapid flickering of light from a black hole is most commonly observed at X-ray wavelengths," says Poshak Gandhi, who led the international team that reports these results. "This new study is one of only a handful to date that also explore the fast variations in visible light, and, most importantly how these fluctuations relate to those in X-rays." The observations tracked the shimmering of the black holes simultaneously using two different instruments, one on the ground and one in space. The X-ray data were taken using NASA's Rossi X-ray Timing Explorer satellite. The visible light was collected with the high speed camera ULTRACAM, a visiting instrument at ESO's Very Large Telescope (VLT), recording up to 20 images a second. ULTRACAM was developed by team members Vik Dhillon and Tom Marsh. "These are among the fastest observations of a black hole ever obtained with a large optical telescope," says Dhillon. To their surprise, astronomers discovered that the brightness fluctuations in the visible light were even more rapid than those seen in X-rays. In addition, the visible-light and X-ray variations were found not to be simultaneous, but to follow a repeated and remarkable pattern: just before an X-ray flare the visible light dims, and then surges to a bright flash for a tiny fraction of a second before rapidly decreasing again. None of this radiation emerges directly from the black hole, but from the intense energy flows of electrically charged matter in its vicinity. The environment of a black hole is constantly being reshaped by a riotous mêlée of strong and competing forces such as gravity, magnetism and explosive pressure. As a result, light emitted by the hot flows of matter varies in brightness in a muddled and haphazard way. "But the pattern found in this new study possesses a stable structure that stands out amidst an otherwise chaotic variability, and so, it can yield vital clues about the dominant underlying physical processes in action," says team member Andy Fabian. The visible-light emission from the neighbourhoods of black holes was widely thought to be a secondary effect, with a primary X-ray outburst illuminating the surrounding gas that subsequently shone in the visible range. But if this were so, any visible-light variations would lag behind the X-ray variability, and would be much slower to peak and fade away. "The rapid visible-light flickering now discovered immediately rules out this scenario for both systems studied," asserts Gandhi. "Instead the variations in the X-ray and visible light output must have some common origin, and one very close to the black hole itself." Strong magnetic fields represent the best candidate for the dominant physical process. Acting as a reservoir, they can soak up the energy released close to the black hole, storing it until it can be discharged either as hot (multi-million degree) X-ray emitting plasma, or as streams of charged particles travelling at close to the speed of light. The division of energy into these two components can result in the characteristic pattern of X-ray and visible-light variability.

IODP Expedition 335: Deep Sampling in ODP Hole 1256D

NASA Astrophysics Data System (ADS)

Teagle, D. A. H.; Ildefonse, B.; Blum, P.; IODP Expedition 335 Scientists, the

2012-04-01

Observations of the gabbroic layers of untectonized ocean crust are essential to test theoretical models of the accretion of new crust at mid-ocean ridges. Integrated Ocean Drilling Program (IODP) Expedition 335 ("Superfast Spreading Rate Crust 4") returned to Ocean Drilling Program (ODP) Hole 1256D with the intention of deepening this reference penetration of intact ocean crust a significant distance (~350 m) into cumulate gabbros. Three earlier cruises to Hole 1256D (ODP 206, IODP 309/312) have drilled through the sediments, lavas, and dikes and 100 m into a complex dike-gabbro transition zone. Operations on IODP Expedition 335 proved challenging throughout, with almost three weeks spent re-opening and securing unstable sections of the hole. When coring commenced, the comprehensive destruction of the coring bit required further remedial operations to remove junk and huge volumes of accumulated drill cuttings. Hole-cleaning operations using junk baskets were successful, and they recovered large irregular samples that document a hitherto unseen sequence of evolving geological conditions and the intimate coupling between temporally and spatially intercalated intrusive, hydrothermal, contact-metamorphic, partial melting, and retrogressive processes. Hole 1256D is now clean of junk, and it has been thoroughly cleared of the drill cuttings that hampered operations during this and previous expeditions. At the end of Expedition 335, we briefly resumed coring before undertaking cementing operations to secure problematic intervals. To ensure the greatest scientific return from the huge efforts to stabilize this primary ocean lithosphere reference site, it would be prudent to resume the deepening of Hole 1256D in the nearest possible future while it is open to full depth. doi:10.2204/iodp.sd.13.04.2011

Giant electron-hole transport asymmetry in ultra-short quantum transistors

PubMed Central

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Influence of the hole geometry on the flow distribution in ventricular catheters for hydrocephalus.

PubMed

Giménez, Ángel; Galarza, Marcelo; Pellicer, Olga; Valero, José; Amigó, José M

2016-07-15

Hydrocephalus is a medical condition consisting of an abnormal accumulation of cerebrospinal fluid within the brain. A catheter is inserted in one of the brain ventricles and then connected to an external valve to drain the excess of cerebrospinal fluid. The main drawback of this technique is that, over time, the ventricular catheter ends up getting blocked by the cells and macromolecules present in the cerebrospinal fluid. A crucial factor influencing this obstruction is a non-uniform flow pattern through the catheter, since it facilitates adhesion of suspended particles to the walls. In this paper we focus on the effects that tilted holes as well as conical holes have on the flow distribution and shear stress. We have carried out 3D computational simulations to study the effect of the hole geometry on the cerebrospinal fluid flow through ventricular catheters. All the simulations were done with the OpenFOAM® toolbox. In particular, three different groups of models were investigated by varying (i) the tilt angles of the holes, (ii) the inner and outer diameters of the holes, and (iii) the distances between the so-called hole segments. The replacement of cylindrical holes by conical holes was found to have a strong influence on the flow distribution and to lower slightly the shear stress. Tilted holes did not involve flow distribution changes when the hole segments are sufficiently separated, but the mean shear stress was certainly reduced. The authors present new results about the behavior of the fluid flow through ventricular catheters. These results complete earlier work on this topic by adding the influence of the hole geometry. The overall objective pursued by this research is to provide guidelines to improve existing commercially available ventricular catheters.

Perovskite solar cells with CuSCN hole extraction layers yield stabilized efficiencies greater than 20%

NASA Astrophysics Data System (ADS)

Arora, Neha; Dar, M. Ibrahim; Hinderhofer, Alexander; Pellet, Norman; Schreiber, Frank; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

2017-11-01

Perovskite solar cells (PSCs) with efficiencies greater than 20% have been realized only with expensive organic hole-transporting materials. We demonstrate PSCs that achieve stabilized efficiencies exceeding 20% with copper(I) thiocyanate (CuSCN) as the hole extraction layer. A fast solvent removal method enabled the creation of compact, highly conformal CuSCN layers that facilitate rapid carrier extraction and collection. The PSCs showed high thermal stability under long-term heating, although their operational stability was poor. This instability originated from potential-induced degradation of the CuSCN/Au contact. The addition of a conductive reduced graphene oxide spacer layer between CuSCN and gold allowed PSCs to retain >95% of their initial efficiency after aging at a maximum power point for 1000 hours under full solar intensity at 60°C. Under both continuous full-sun illumination and thermal stress, CuSCN-based devices surpassed the stability of spiro-OMeTAD-based PSCs.

Fibroblasts are in a position to provide directional information to migrating neutrophils during pneumonia in rabbit lungs.

PubMed

Behzad, A R; Chu, F; Walker, D C

1996-05-01

Previous findings have shown that pulmonary fibroblasts are associated with preexisting holes in the endothelial and epithelial basal laminae through which neutrophils appear to enter and leave the interstitium as they migrate from capillaries to alveoli. To determine their role in neutrophil migration, fibroblast organization within the interstitium was assessed by transmission electron microscope observations of serial-sectioned rabbit lung tissue. Interstitial fibroblasts were found to physically interconnect the endothelial basal lamina holes to epithelial basal lamina holes. Morphometric assessment of rabbit lung tissue instilled with Streptococcus pneumoniae revealed that approximately 70% of the surface area density of migrating neutrophils is in close contact (15 nm or less) with interstitial fibroblasts and extracellular matrix elements (30 and 40%, respectively). Although migrating neutrophils were close enough to adhere to both fibroblasts and extracellular elements, the interstitial fibroblasts are organized in a manner that would allow them to provide directional information to the neutrophils. A model illustrating this process is proposed.

Cuprous Oxide as a Potential Low-Cost Hole-Transport Material for Stable Perovskite Solar Cells.

PubMed

Nejand, Bahram Abdollahi; Ahmadi, Vahid; Gharibzadeh, Saba; Shahverdi, Hamid Reza

2016-02-08

Inorganic hole-transport materials are commercially desired to decrease the fabrication cost of perovskite solar cells. Here, Cu2O is introduced as a potential hole-transport material for stable, low-cost devices. Considering that Cu2O formation is highly sensitive to the underlying mixture of perovskite precursors and their solvents, we proposed and engineered a technique for reactive magnetron sputtering. The rotational angular deposition of Cu2O yields high surface coverage of the perovskite layer for high rate of charge extraction. Deposition of this Cu2O layer on the pinhole-free perovskite layer produces devices with power conversion efficiency values of up to 8.93%. The engineered Cu2O layers showed uniform, compact, and crack-free surfaces on the perovskite layer without affecting the perovskite structure, which is desired for deposition of the top metal contact and for surface shielding against moisture and mechanical damages. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interface Engineering Based on Liquid Metal for Compact-Layer-free, Fully Printable Mesoscopic Perovskite Solar Cells.

PubMed

Zhang, Yumin; Zhao, Jianhong; Zhang, Jin; Jiang, Xixi; Zhu, Zhongqi; Liu, Qingju

2018-05-09

A printing process for the fabrication of perovskite solar cells (PSCs) exhibits promising future application in the photovoltaic industry due to its low-cost and eco-friendly preparation. In mesoscopic carbon-based PSCs, however, compared to conventional ones, the hole-transport-layer-free PSCs often lead to inefficient hole extraction. Here, we used liquid metal (LM, Galinstan) as an interface modifier material in combination with a carbon electrode. Considering the high conductivity and room-temperature fluidity, it is found that LMs are superior in improving hole extraction and, more importantly, LMs tend to be reserved at the interface between ZrO 2 and carbon for enhancing the contact property. Correspondingly, the carrier transfer resistance was decreased at the carbon/perovskite interface. As optimized content, the triple mesoscopic PSCs based on mixed-cation perovskite with a power conversion efficiency of 13.51% was achieved, involving a 26% increase compared to those without LMs. This work opens new techniques for LMs in optoelectronics and printing.

U.S. High School Graduation Rates: Patterns and Explanations. NBER Working Paper No. 18701

ERIC Educational Resources Information Center

Murnane, Richard J.

2013-01-01

I survey the evidence on patterns in U.S. high school graduation rates over the period 1970-2010 and report the results of new research conducted to fill in holes in the evidence. I begin by pointing out the strengths and limitations of existing data sources. I then describe six striking patterns in graduation rates. They include stagnation over…

Flow visualization of discrete hole film cooling for gas turbine applications

NASA Technical Reports Server (NTRS)

Colladay, R. S.; Russell, L. M.

1975-01-01

Film injection from discrete holes in a three row staggered array with 5-diameter spacing is studied for three different hole angles: (1) normal, (2) slanted 30 deg to the surface in the direction of the mainstream, and (3) slanted 30 deg to the surface and 45 deg laterally to the mainstream. The boundary layer thickness-to-hole diameter ratio and Reynolds number are typical of gas turbine film cooling applications. Two different injection locations are studied to evaluate the effect of boundary layer thickness on film penetration and mixing. Detailed streaklines showing the turbulent motion of the injected air are obtained by photographing very small neutrally buoyant helium filled 'soap' bubbles which follow the flow field. Unlike smoke, which diffuses rapidly in the high turbulent mixing region associated with discrete hole blowing, the bubble streaklines passing downstream injection locations are clearly identifiable and can be traced back to their origin. Visualization of surface temperature patterns obtained from infrared photographs of a similar film cooled surface are also included.

Directed self-assembly of diblock copolymers in cylindrical confinement: effect of underfilling and air-polymer interactions on configurations

NASA Astrophysics Data System (ADS)

Carpenter, Corinne L.; Delaney, Kris T.; Laachi, Nabil; Fredrickson, Glenn H.

2015-03-01

Directed self-assembly (DSA) of block copolymers has attracted attention for its use as a simple, cost- effective patterning tool for creating vertical interconnect access (VIA) channels in nanoelectronic devices.1, 2 This technique supplements existing lithographic technologies to allow for the creation of high-resolution cylindrical holes whose diameter and placement can be precisely controlled. In this study, we use self-consistent field theory (SCFT) simulations to investigate the equilibrium configurations of under-filled DSA systems with air-polymer interactions. We report on a series of SCFT simulations of our three species (PMMA-b-PS diblock and air) model in cylindrical confinement to explore the role of template diameter, under-fill fraction (i.e. volume fraction of air), air-polymer surface interaction and polymer-side wall/substrate interactions on equilibrium morphologies in an under-filled template with a free top surface. We identify parameters and system configurations where a meniscus appears and explore cases with PMMA-attractive, PS-attractive, and all-neutral walls to understand the effects of wall properties on meniscus geometry and DSA morphology. An important outcome is an understanding of the parameters that control the contact angle of the meniscus with the wall, as it is one of the simplest quantitative measures of the meniscus shape. Ultimately, we seek to identify DSA formulations, templates, and surface treatments with predictable central cylinder diameter and a shallow contact angle, as these factors would facilitate broad process windows and ease of manufacturing.

The structure and evolution of coronal holes

NASA Technical Reports Server (NTRS)

Timothy, A. F.; Krieger, A. S.; Vaiana, G. S.

1975-01-01

Soft X-ray observations of coronal holes are analyzed to determine the structure, temporal evolution, and rotational properties of those features as well as possible mechanisms which may account for their almost rigid rotational characteristics. It is shown that coronal holes are open features with a divergent magnetic-field configuration resulting from a particular large-scale magnetic-field topology. They are apparently formed when the successive emergence and dispersion of active-region fields produce a swath of unipolar field founded by fields of opposite polarity, and they die when large-scale field patterns emerge which significantly distort the original field configuration. Two types of holes are described (compact and elongated), and three possible rotation mechanisms are considered: a rigidly rotating subphotospheric phenomenon, a linking of high and low latitudes by closed field lines, and an interaction between moving coronal material and open field lines.

Battling through the thermal boundary layer: Deep sampling in ODP Hole 1256D during IODP Expedition 335

NASA Astrophysics Data System (ADS)

Ildefonse, B.; Teagle, D. A.; Blum, P.; IODP Expedition 335 Scientists

2011-12-01

IODP Expedition 335 "Superfast Spreading Rate Crust 4" returned to ODP Hole 1256D with the intent of deepening this reference penetration of intact ocean crust several hundred meters into cumulate gabbros. This was the fourth cruise of the superfast campaign to understand the formation of oceanic crust accreted at fast spreading ridges, by exploiting the inverse relationship between spreading rate and the depth to low velocity zones seismically imaged at active mid-ocean zones, thought to be magma chambers. Site 1256 is located on 15-million-year-old crust formed at the East Pacific Rise during an episode of superfast ocean spreading (>200 mm/yr full rate). Three earlier cruises to Hole 1256D have drilled through the sediments, lavas and dikes and 100 m into a complex dike-gabbro transition zone. The specific objectives of IODP Expedition 335 were to: (1) test models of magmatic accretion at fast spreading ocean ridges; (2) quantify the vigor of hydrothermal cooling of the lower crust; (3) establish the geological meaning of the seismic Layer 2-3 boundary at Site 1256; and (4) estimate the contribution of lower crustal gabbros to marine magnetic anomalies. It was anticipated that even a shortened IODP Expedition could deepen Hole 1256D a significant distance (300 m) into cumulate gabbros. Operations on IODP Expedition 335 proved challenging from the outset with almost three weeks spent re-opening and securing unstable sections of the Hole. When coring commenced, the destruction of a hard-formation C9 rotary coring bit at the bottom of the hole required further remedial operations to remove junk and huge volumes of accumulated drill cuttings. Hole-cleaning operations using junk baskets returned large samples of a contact-metamorphic aureole between the sheeted dikes and a major heat source below. These large (up to 3.5 kg) irregular samples preserve magmatic, hydrothermal and structural relationships hitherto unseen because of the narrow diameter of drill core and previous poor core recovery. Including the ~60 m-thick zone of granoblastic dikes overlying the uppermost gabbro, the dike-gabbro transition zone at Site 1256 is over 170 m thick, of which more than 100 m are recrystallized granoblastic basalts. This zone records a dynamically evolving thermal boundary layer between the principally hydrothermal domain of the upper crust and a deeper zone of intrusive magmatism. The recovered samples document a sequence of evolving geological conditions and the intimate coupling between temporally and spatially intercalated intrusive, hydrothermal, contact-metamorphic, partial melting and retrogressive processes. Despite the operational challenges, we achieved a minor depth advance to 1522 m, but this was insufficient penetration to complete any of the primary objectives. However, Hole 1256D has been thoroughly cleared of junk and drill cuttings that have hampered operations during this and previous Expeditions. At the end of Expedition 335, we briefly resumed coring and stabilized problematic intervals with cement. Hole 1256D is open to its full depth and ready for further deepening in the near future.

Core-Cutoff Tool

NASA Technical Reports Server (NTRS)

Gheen, Darrell

2007-01-01

A tool makes a cut perpendicular to the cylindrical axis of a core hole at a predetermined depth to free the core at that depth. The tool does not damage the surrounding material from which the core was cut, and it operates within the core-hole kerf. Coring usually begins with use of a hole saw or a hollow cylindrical abrasive cutting tool to make an annular hole that leaves the core (sometimes called the plug ) in place. In this approach to coring as practiced heretofore, the core is removed forcibly in a manner chosen to shear the core, preferably at or near the greatest depth of the core hole. Unfortunately, such forcible removal often damages both the core and the surrounding material (see Figure 1). In an alternative prior approach, especially applicable to toxic or fragile material, a core is formed and freed by means of milling operations that generate much material waste. In contrast, the present tool eliminates the damage associated with the hole-saw approach and reduces the extent of milling operations (and, hence, reduces the waste) associated with the milling approach. The present tool (see Figure 2) includes an inner sleeve and an outer sleeve and resembles the hollow cylindrical tool used to cut the core hole. The sleeves are thin enough that this tool fits within the kerf of the core hole. The inner sleeve is attached to a shaft that, in turn, can be attached to a drill motor or handle for turning the tool. This tool also includes a cutting wire attached to the distal ends of both sleeves. The cutting wire is long enough that with sufficient relative rotation of the inner and outer sleeves, the wire can cut all the way to the center of the core. The tool is inserted in the kerf until its distal end is seated at the full depth. The inner sleeve is then turned. During turning, frictional drag on the outer core pulls the cutting wire into contact with the core. The cutting force of the wire against the core increases with the tension in the wire and, hence, with the frictional drag acting on the outer sleeve. As the wire cuts toward the center of the core, the inner sleeve rotates farther with respect to the outer sleeve. Once the wire has cut to the center of the core, the tool and the core can be removed from the hole. The proper choice of cutting wire depends on the properties of the core material. For a sufficiently soft core material, a nonmetallic monofilament can be used. For a rubber-like core material, a metal wire can be used. For a harder core material, it is necessary to use an abrasive wire, and the efficiency of the tool can be increased greatly by vacuuming away the particles generated during cutting. For a core material that can readily be melted or otherwise cut by use of heat, it could be preferable to use an electrically heated cutting wire. In such a case, electric current can be supplied to the cutting wire, from an electrically isolated source, via rotating contact rings mounted on the sleeves.

Hybrid morphology dependence of CdTe:CdSe bulk-heterojunction solar cells

PubMed Central

2014-01-01

A nanocrystal thin-film solar cell operating on an exciton splitting pattern requires a highly efficient separation of electron-hole pairs and transportation of separated charges. A hybrid bulk-heterojunction (HBH) nanostructure providing a large contact area and interpenetrated charge channels is favorable to an inorganic nanocrystal solar cell with high performance. For this freshly appeared structure, here in this work, we have firstly explored the influence of hybrid morphology on the photovoltaic performance of CdTe:CdSe bulk-heterojunction solar cells with variation in CdSe nanoparticle morphology. Quantum dot (QD) or nanotetrapod (NT)-shaped CdSe nanocrystals have been employed together with CdTe NTs to construct different hybrid structures. The solar cells with the two different hybrid active layers show obvious difference in photovoltaic performance. The hybrid structure with densely packed and continuously interpenetrated two phases generates superior morphological and electrical properties for more efficient inorganic bulk-heterojunction solar cells, which could be readily realized in the NTs:QDs hybrid. This proved strategy is applicable and promising in designing other highly efficient inorganic hybrid solar cells. PMID:25386107

Hybrid morphology dependence of CdTe:CdSe bulk-heterojunction solar cells.

PubMed

Tan, Furui; Qu, Shengchun; Zhang, Weifeng; Wang, Zhanguo

2014-01-01

A nanocrystal thin-film solar cell operating on an exciton splitting pattern requires a highly efficient separation of electron-hole pairs and transportation of separated charges. A hybrid bulk-heterojunction (HBH) nanostructure providing a large contact area and interpenetrated charge channels is favorable to an inorganic nanocrystal solar cell with high performance. For this freshly appeared structure, here in this work, we have firstly explored the influence of hybrid morphology on the photovoltaic performance of CdTe:CdSe bulk-heterojunction solar cells with variation in CdSe nanoparticle morphology. Quantum dot (QD) or nanotetrapod (NT)-shaped CdSe nanocrystals have been employed together with CdTe NTs to construct different hybrid structures. The solar cells with the two different hybrid active layers show obvious difference in photovoltaic performance. The hybrid structure with densely packed and continuously interpenetrated two phases generates superior morphological and electrical properties for more efficient inorganic bulk-heterojunction solar cells, which could be readily realized in the NTs:QDs hybrid. This proved strategy is applicable and promising in designing other highly efficient inorganic hybrid solar cells.

Daily patterns of communication and contact between Italian early adolescents and their friends.

PubMed

Baiocco, Roberto; Laghi, Fiorenzo; Schneider, Barry H; Dalessio, Maria; Amichai-Hamburger, Yair; Coplan, Robert J; Koszycki, Diana; Flament, Martine

2011-01-01

The goal of the present study was to explore patterns of communication between adolescents and their friends across both "online" and "in-person" contexts. The participants were adolescents (n = 727) aged 11-16 years attending middle schools in urban and rural areas of Italy. Participants completed daily logs of their in-person and online contacts with friends for 20 consecutive school days. Girls reported more total contacts with their friends than did boys as well as friendships that were closer and more intimate. However, boys indicated more contact than girls via electronic communication and online. Contacts with peers in general were less frequent among the older participants, perhaps because of increasing academic demands. Participants who complemented in-person contact with friends with electronic contact were less lonely than their counterparts who were less versatile in accessing different modalities of making contact with friends.

Improved high power/high frequency inductor

NASA Technical Reports Server (NTRS)

Mclyman, W. T. (Inventor)

1990-01-01

A toroidal core is mounted on an alignment disc having uniformly distributed circumferential notches or holes therein. Wire is then wound about the toroidal core in a uniform pattern defined by the notches or holes. Prior to winding, the wire may be placed within shrink tubing. The shrink tubing is then wound about the alignment disc and core and then heat-shrunk to positively retain the wire in the uniform position on the toroidal core.

Architectural Patterns for Self-Organizing Systems-of-Systems

DTIC Science & Technology

2011-05-01

show that they are necessary for self-organization to occur. Common Purpose Abraham Maslow proposed a theory on human motivation based on a hierarchy...http://www.hole-in-the-wall.com/abouthiwel.html (accessed October 28, 2010). 21. Maslow , Abraham . 1943. A theory of human motivation. In Psychological...in-the-wall Education Ltd. http://www.hole- in-the-wall.com/abouthiwel.html (accessed October 28, 2010). 22. Maslow , Abraham . 1943. A theory of human

Design, synthesis, thin film deposition and characterization of new indium tin oxide anode functionalization/hole transport organic materials and their application to high performance organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Huang, Qinglan

The primary goals of this dissertation were to understand the physical and chemical aspects of organic light-emitting diode (OLED) fundamentals, develop new materials as well as device structures, and enhance OLED electroluminescent (EL) response. Accordingly, this dissertation analyzes the relative effects of indium tin oxide (ITO) anode-hole transporting layer (HTL) contact vs. the intrinsic HTL material properties on OLED EL response. Two siloxane-based HTL materials, 4,4'-bis[(4″ -trichlorosilylpropyl-1″-naphthylphenylamino)biphenyl (NPB-Si2) and 4,4'-bis[(p-trichlorosilylpropylphenyl)phenylamino]biphenyl (TPD-Si2) have thereby been designed, synthesized and covalently bound to ITO surface. They afford a 250% increase in luminance and ˜50% reduction in turn-on voltage vs. comparable 4,4'-bis(1-naphthylphenylamino)biphenyl (NPB) HTL-based devices. These results suggest new strategies for developing OLED HTL structures, with focus on the anode-HTL contact. Furthermore, archetypical OLED device structures have been refined by simultaneously incorporating the TPD-Si2 layer and a hole- and exciton-blocking/electron transport layer (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) in tris(8-hydroxyquinolato)aluminum(III) and tetrakis(2-methyl-8-hydroxyquinolinato)borate-based OLEDs. The refined device structures lead to high performance OLEDs such as green-emitting OLEDs with maximum luminance (Lmax) ˜ 85,000 cd/m2, power and forward external quantum efficiencies (eta p and etaext) as high as 15.2 lm/W and 4.4 +/- 0.5%, respectively, and blue-emitting OLEDs with Lmax 30,000 cd/m 2, and ˜5.0 lm/W and 1.6 +/- 0.2% etap and eta ext, respectively. The high performance is attributed to synergistically enhanced hole/electron injection and recombination efficiency. In addition, molecule-scale structure effects at ITO anode-HTL interfaces have been systematically probed via a self-assembly approach. A series of silyltriarylamine precursors differing in aryl group and linker density have been designed and synthesized for this purpose. These precursors form conformal and largely pin-hole free self-assembled monolayers (SAMs) on the anode surface with A-level thickness control. Followed by deposition of a HTL on top of the SAMs, the probe molecules are placed precisely at the anode-HTL interface, resulting in varied hole injection magnitude and OLED response. The large interfacial molecular structure effects afford an approach to tuning OLED hole injection flux over one to two orders of magnitude, resulting in up to 3 fold variation in OLED brightness at identical bias and up to a 2 V driving voltage modulation at identical brightness.

New type of dummy layout pattern to control ILD etch rate

NASA Astrophysics Data System (ADS)

Pohland, Oliver; Spieker, Julie; Huang, Chih-Ta; Govindaswamy, Srikanth; Balasinski, Artur

2007-12-01

Adding dummy features (waffles) to drawn geometries of the circuit layout is a common practice to improve its manufacturability. As an example, local dummy pattern improves MOSFET line and space CD control by adjusting short range optical proximity and reducing the aggressiveness of its correction features (OPC) to widen the lithography process window. Another application of dummy pattern (waffles) is to globally equalize layout pattern density, to reduce long-range inter-layer dielectric (ILD) thickness variations after the CMP process and improve contact resistance uniformity over the die area. In this work, we discuss a novel type of dummy pattern with a mid-range interaction distance, to control the ILD composition driven by its deposition and etch process. This composition is reflected on sidewall spacers and depends on the topography of the underlying poly pattern. During contact etch, it impacts the etch rate of the ILD. As a result, the deposited W filling the damascene etched self-aligned trench contacts in the ILD may electrically short to the underlying gates in the areas of isolated poly. To mitigate the dependence of the ILD composition on poly pattern distribution, we proposed a special dummy feature generation with the interaction range defined by the ILD deposition and etch process. This helped equalize mid-range poly pattern density without disabling the routing capability with damascene trench contacts in the periphery which would have increased the layout footprint.

Electrochemical doping for lowering contact barriers in organic field effect transistors

PubMed Central

Schaur, Stefan; Stadler, Philipp; Meana-Esteban, Beatriz; Neugebauer, Helmut; Serdar Sariciftci, N.

2012-01-01

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evoked at the transistor injection electrodes. An improvement is observed when comparing transistor characteristics before and after the doping process apparent by an improved transistor on-current. This effect is reflected in the analysis of the contact resistances of the devices. PMID:23483101

Efficient n-Doping and Hole Blocking in Single-Walled Carbon Nanotube Transistors with 1,2,4,5-Tetrakis(tetramethylguanidino)ben-zene.

PubMed

Schneider, Severin; Brohmann, Maximilian; Lorenz, Roxana; Hofstetter, Yvonne J; Rother, Marcel; Sauter, Eric; Zharnikov, Michael; Vaynzof, Yana; Himmel, Hans-Jörg; Zaumseil, Jana

2018-05-31

Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enables the fabrication of purely n-type SWCNT field-effect transistors (FETs). We apply ttmgb to networks of monochiral, semiconducting (6,5) SWCNTs that show intrinsic ambipolar behavior in bottom-contact/top-gate FETs and obtain unipolar n-type transport with 3-5-fold enhancement of electron mobilities (approximately 10 cm 2  V -1  s -1 ), while completely suppressing hole currents, even at high drain voltages. These n-type FETs show excellent on/off current ratios of up to 10 8 , steep subthreshold swings (80-100 mV/dec), and almost no hysteresis. Their excellent device characteristics stem from the reduction of the work function of the gold electrodes via contact doping, blocking of hole injection by ttmgb 2+ on the electrode surface, and removal of residual water from the SWCNT network by ttmgb protonation. The ttmgb-treated SWCNT FETs also display excellent environmental stability under bias stress in ambient conditions. Complementary inverters based on n- and p-doped SWCNT FETs exhibit rail-to-rail operation with high gain and low power dissipation. The simple and stable ttmgb molecule thus serves as an example for the larger class of guanidino-functionalized aromatic compounds as promising electron donors for high-performance thin film electronics.

Improving contact layer patterning using SEM contour based etch model

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka; Hertzsch, Tino; Moll, Hans-Peter

2016-10-01

The patterning of the contact layer is modulated by strong etch effects that are highly dependent on the geometry of the contacts. Such litho-etch biases need to be corrected to ensure a good pattern fidelity. But aggressive designs contain complex shapes that can hardly be compensated with etch bias table and are difficult to characterize with standard CD metrology. In this work we propose to implement a model based etch compensation method able to deal with any contact configuration. With the help of SEM contours, it was possible to get reliable 2D measurements particularly helpful to calibrate the etch model. The selections of calibration structures was optimized in combination with model form to achieve an overall errRMS of 3nm allowing the implementation of the model in production.

Joint contact loading in forefoot and rearfoot strike patterns during running.

PubMed

Rooney, Brandon D; Derrick, Timothy R

2013-09-03

Research concerning forefoot strike pattern (FFS) versus rearfoot strike pattern (RFS) running has focused on the ground reaction force even though internal joint contact forces are a more direct measure of the loads responsible for injury. The main purpose of this study was to determine the internal loading of the joints for each strike pattern. A secondary purpose was to determine if converted FFS and RFS runners can adequately represent habitual runners with regards to the internal joint loading. Using inverse dynamics to calculate the net joint moments and reaction forces and optimization techniques to estimate muscle forces, we determined the axial compressive loading at the ankle, knee, and hip. Subjects consisted of 15 habitual FFS and 15 habitual RFS competitive runners. Each subject ran at a preferred running velocity with their habitual strike pattern and then converted to the opposite strike pattern. Plantar flexor muscle forces and net ankle joint moments were greater in the FFS running compared to the RFS running during the first half of the stance phase. The average contact forces during this period increased by 41.7% at the ankle and 14.4% at the knee joint during FFS running. Peak ankle joint contact force was 1.5 body weights greater during FFS running (p<0.05). There was no evidence to support a difference between habitual and converted running for joint contact forces. The increased loading at the ankle joint for FFS is an area of concern for individuals considering altering their foot strike pattern. Copyright © 2013 Elsevier Ltd. All rights reserved.

Carrier Selective, Passivated Contacts for High Efficiency Silicon Solar Cells based on Transparent Conducting Oxides

DOE PAGES

Young, David L.; Nemeth, William; Grover, Sachit; ...

2014-01-01

We describe the design, fabrication and results of passivated contacts to n-type silicon utilizing thin SiO 2 and transparent conducting oxide layers. High temperature silicon dioxide is grown on both surfaces of an n-type wafer to a thickness <50 Å, followed by deposition of tin-doped indium oxide (ITO) and a patterned metal contacting layer. As deposited, the thin-film stack has a very high J0, contact, and a non-ohmic, high contact resistance. However, after a forming gas anneal, the passivation quality and the contact resistivity improve significantly. The contacts are characterized by measuring the recombination parameter of the contact (J0, contact)more » and the specific contact resistivity (ρ contact) using a TLM pattern. The best ITO/SiO 2 passivated contact in this study has J 0,contact = 92.5 fA/cm 2 and ρ contact = 11.5 mOhm-cm 2. These values are placed in context with other passivating contacts using an analysis that determines the ultimate efficiency and the optimal area fraction for contacts for a given set of (J0, contact, ρ contact) values. The ITO/SiO 2 contacts are found to have a higher J0, contact, but a similar ρ contact compared to the best reported passivated contacts.« less