Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE PAGES

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

2016-04-27

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Role of Al in Zn bath on the formation of the inhibition layer during hot-dip galvanizing for a 1.2Si-1.5Mn transformation-induced plasticity steel

NASA Astrophysics Data System (ADS)

Wang, Kuang-Kuo; Hsu, Chiung-Wen; Chang, Liuwen; Gan, Dershin; Yang, Kuo-Cheng

2013-11-01

This study investigated the interaction between the Al in the Zn bath and the surface oxides formed by selective oxidation on a 1.2Si-1.5Mn TRIP steel during hot-dip galvanizing. XPS and TEM were employed for characterization. The results indicated that the amorphous xMnO·SiO2 oxide could react with Al to form a Si-Mn-Al-containing oxide. The crystalline MnSiO3 and Mn2SiO4 oxides could be largely reduced by Al to form holes in the oxide film. Consequently, the steel covered by a layer of mixed xMnO·SiO2 and MnSiO3 could form a continuous Fe2Al5 inhibition layer and showed the highest galvanizability among the three samples examined.

High-temperature oxidation of advanced FeCrNi alloy in steam environments

NASA Astrophysics Data System (ADS)

Elbakhshwan, Mohamed S.; Gill, Simerjeet K.; Rumaiz, Abdul K.; Bai, Jianming; Ghose, Sanjit; Rebak, Raul B.; Ecker, Lynne E.

2017-12-01

Alloys of iron-chromium-nickel are being explored as alternative cladding materials to improve safety margins under severe accident conditions. Our research focuses on non-destructively investigating the oxidation behavior of the FeCrNi alloy "Alloy 33" using synchrotron-based methods. The evolution and structure of oxide layer formed in steam environments were characterized using X-ray diffraction, hard X-ray photoelectron spectroscopy, X-ray fluorescence methods and scanning electron microscopy. Our results demonstrate that a compact and continuous oxide scale was formed consisting of two layers, chromium oxide and spinel phase (FeCr2O4) oxides, wherein the concentration of the FeCr2O4 phase decreased from the surface to the bulk-oxide interface.

Surface Modification of Thermal Barrier Coatings by Single-Shot Defocused Laser Treatments

NASA Astrophysics Data System (ADS)

Akdoğan, Vakur; Dokur, Mehmet M.; Göller, Gültekin; Keleş, Özgül

2013-09-01

Thermal barrier coatings (TBC) consisting of atmospheric plasma-sprayed ZrO2-8 wt.% Y2O3 and a high velocity oxygen fuel-sprayed metallic bond coat were subjected to CO2 continuous wave laser treatments. The effects of laser power on TBCs were investigated as was the thermally grown oxide (TGO) layer development of all as-sprayed and laser-treated coatings after thermal oxidation tests in air environment for 50, 100, and 200 h at 1100 °C. The effects of laser power on TBCs were investigated. TGO layer development was examined on all as-sprayed and laser-treated coatings after thermal oxidation tests in air environment for 50, 100, and 200 h at 1100 °C. Melted and heat-affected zone regions were observed in all the laser-treated samples. Oxidation tests showed a stable alumina layer and mixed spinel oxides in the TGO layers of the as-sprayed and laser-treated TBCs.

Impedance spectroscopy and microstructural characterization of the corrosion behavior of FeCrAl alloy in lead-bismuth eutectic

NASA Astrophysics Data System (ADS)

Chen, Xiang; Haasch, Rick; Stubbins, James F.

2012-12-01

The corrosion behavior of FeCrAl alloy in Lead-Bismuth Eutectic (LBE) saturated with oxygen at 550 °C was investigated. Impedance Spectroscopy (IS) measurement was made continuously on one specimen during the entire LBE exposure test to characterize the corrosion kinetics. Various microanalysis techniques, including SEM, EDS, XRD, AES, and XPS were used to analyze the corrosion products of post-exposure specimens. It was found that a very thin, adherent alumina oxide layer formed on the specimen surface and was able to protect the alloy from the corrosion attack in LBE. The thickness of the alumina surface layer increased very slowly with time reaching about 837 nm in average thickness after exposure for 3600-h in LBE. The IS measurements match the microanalysis results in three respects: first, a non-zero impedance measurement agrees with the existence of a continuous surface oxide layer; second, a general increase of the impedance was observed during the real-time IS measurement which means that the IS measurements reflect the growth rate of the oxide layer; and third, the oxide film thickness derived from the IS data compares favorably with the SEM film thickness measurements which establishes the validity of using IS to monitor the real-time corrosion kinetics of alloys in LBE.

Tuning Electrochemical Properties of Li-Rich Layered Oxide Cathodes by Adjusting Co/Ni Ratios and Mechanism Investigation Using in situ X-ray Diffraction and Online Continuous Flow Differential Electrochemical Mass Spectrometry.

PubMed

Shen, ShouYu; Hong, YuHao; Zhu, FuChun; Cao, ZhenMing; Li, YuYang; Ke, FuSheng; Fan, JingJing; Zhou, LiLi; Wu, LiNa; Dai, Peng; Cai, MingZhi; Huang, Ling; Zhou, ZhiYou; Li, JunTao; Wu, QiHui; Sun, ShiGang

2018-04-18

Owing to high specific capacity of ∼250 mA h g -1 , lithium-rich layered oxide cathode materials (Li 1+ x Ni y Co z Mn (3- x-2 y-3 z)/4 O 2 ) have been considered as one of the most promising candidates for the next-generation cathode materials of lithium ion batteries. However, the commercialization of this kind of cathode materials seriously restricted by voltage decay upon cycling though Li-rich materials with high cobalt content have been widely studied and show good capacity. This research successfully suppresses voltage decay upon cycling while maintaining high specific capacity with low Co/Ni ratio in Li-rich cathode materials. Online continuous flow differential electrochemical mass spectrometry (OEMS) and in situ X-ray diffraction (XRD) techniques have been applied to investigate the structure transformation of Li-rich layered oxide materials during charge-discharge process. The results of OEMS revealed that low Co/Ni ratio lithium-rich layered oxide cathode materials released no lattice oxygen at the first charge process, which will lead to the suppression of the voltage decay upon cycling. The in situ XRD results displayed the structure transition of lithium-rich layered oxide cathode materials during the charge-discharge process. The Li 1.13 Ni 0.275 Mn 0.580 O 2 cathode material exhibited a high initial medium discharge voltage of 3.710 and a 3.586 V medium discharge voltage with the lower voltage decay of 0.124 V after 100 cycles.

High-temperature oxidation of advanced FeCrNi alloy in steam environments

DOE PAGES

Elbakhshwan, Mohamed S.; Gill, Simerjeet K.; Rumaiz, Abdul K.; ...

2017-07-04

Alloys of iron-chromium-nickel are being explored as alternative cladding materials to improve safety margins under severe accident conditions. Here, our research focuses on non-destructively investigating the oxidation behavior of the FeCrNi alloy “Alloy 33” using synchrotron-based methods. The evolution and structure of oxide layer formed in steam environments were characterized using X-ray diffraction, hard X-ray photoelectron spectroscopy, X-ray fluorescence methods and scanning electron microscopy. In conclusion, our results demonstrate that a compact and continuous oxide scale was formed consisting of two layers, chromium oxide and spinel phase (FeCr 2O 4) oxides, wherein the concentration of the FeCr 2O 4 phasemore » decreased from the surface to the bulk-oxide interface.« less

Surface and Interface Chemistry for Gate Stacks on Silicon

NASA Astrophysics Data System (ADS)

Frank, M. M.; Chabal, Y. J.

This chapter addresses the fundamental silicon surface science associated with the continued progress of nanoelectronics along the path prescribed by Moore's law. Focus is on hydrogen passivation layers and on ultrathin oxide films encountered during silicon cleaning and gate stack formation in the fabrication of metal-oxide-semiconductor field-effect transistors (MOSFETs). Three main topics are addressed. (i) First, the current practices and understanding of silicon cleaning in aqueous solutions are reviewed, including oxidizing chemistries and cleans leading to a hydrogen passivation layer. The dependence of the final surface termination and morphology/roughness on reactant choice and pH and the influence of impurities such as dissolved oxygen or metal ions are discussed. (ii) Next, the stability of hydrogen-terminated silicon in oxidizing liquid and gas phase environments is considered. In particular, the remarkable stability of hydrogen-terminated silicon surface in pure water vapor is discussed in the context of atomic layer deposition (ALD) of high-permittivity (high-k) gate dielectrics where water is often used as an oxygen precursor. Evidence is also provided for co-operative action between oxygen and water vapor that accelerates surface oxidation in humid air. (iii) Finally, the fabrication of hafnium-, zirconium- and aluminum-based high-k gate stacks is described, focusing on the continued importance of the silicon/silicon oxide interface. This includes a review of silicon surface preparation by wet or gas phase processing and its impact on high-k nucleation during ALD growth, and the consideration of gate stack capacitance and carrier mobility. In conclusion, two issues are highlighted: the impact of oxygen vacancies on the electrical characteristics of high-k MOS devices, and the way alloyed metal ions (such as Al in Hf-based gate stacks) in contact with the interfacial silicon oxide layer can be used to control flatband and threshold voltages.

The Effect of Bi on the Selective Oxide Formation on CMnSi TRIP Steel

NASA Astrophysics Data System (ADS)

Oh, Jonghan; Cho, Lawrence; Kim, Myungsoo; Kang, Kichul; De Cooman, Bruno C.

2016-11-01

The effect of Bi addition on the selective oxidation and the galvanizability of CMnSi transformation-induced plasticity (TRIP) steels was studied by hot dip galvanizing laboratory simulations. Bi-added TRIP steels were intercritically annealed at 1093 K (820 °C) and galvanized in a 0.22 wt pct Al-containing Zn bath. The oxide morphology was investigated by scanning electron microscopy, transmission electron microscopy, and 3D atom probe tomography. Bi formed a Bi-enriched surface layer during the intercritical annealing. A decrease of the oxygen permeability was observed with increasing Bi addition. The internal oxidation was suppressed in Bi-added CMnSi TRIP steel. The surface oxide morphology was changed from a continuous layer morphology to a more lens-shaped morphology. The galvanizability of the Bi-added TRIP steel was improved by the combination of the change of the oxide morphology and the dissolution of the Bi-enriched surface layer during immersion of the strip in the Zn bath.

Isothermal Oxidation of Magnetite to Hematite in Air and Cyclic Reduction/Oxidation Under Carbon Looping Combustion Conditions

NASA Astrophysics Data System (ADS)

Simmonds, Tegan; Hayes, Peter C.

2017-12-01

In the carbon looping combustion process the oxygen carrier is regenerated through oxidation in air; this process has been simulated by the oxidation of dense synthetic magnetite for selected temperatures and times. The oxidation of magnetite in air is shown to occur through the formation of dense hematite layers on the particle surface. This dense hematite forms through lath type shear transformations or solid-state diffusion through the product layer. Cyclic reduction in CO-CO2/oxidation in air of hematite single crystals has been carried out under controlled laboratory conditions at 1173 K (900 °C). It has been shown that the initial reduction step is critical to determining the product microstructure, which consists of gas pore dendrites in the magnetite matrix with blocky hematite formed on the pore surfaces. The progressive growth of the magnetite layer with the application of subsequent cycles appears to continue until no original hematite remains, after which physical disintegration of the particles takes place.

Influence of Gas Atmosphere Dew Point on the Selective Oxidation and the Reactive Wetting During Hot Dip Galvanizing of CMnSi TRIP Steel

NASA Astrophysics Data System (ADS)

Cho, Lawrence; Lee, Seok Jae; Kim, Myung Soo; Kim, Young Ha; De Cooman, Bruno C.

2013-01-01

The selective oxidation and reactive wetting of intercritically annealed Si-bearing CMnSi transformation-induced plasticity steels were investigated by high-resolution transmission electron microscopy. In a N2 + 10 pct H2 gas atmosphere with a dew point (DP) ranging from 213 K to 278 K (-60 °C to 5 °C), a continuous layer of selective oxides was formed on the surface. Annealing in a higher DP gas atmosphere resulted in a thinner layer of external oxidation and a greater depth of internal oxidation. The hot dipping was carried out in a Zn bath containing 0.22 mass pct Al, and the bath temperature was 733 K (460 °C). Coarse and discontinuous Fe2Al5- x Zn x grains and Fe-Zn intermetallics (ζ and δ) were observed at the steel/coating interface after the hot dip galvanizing (HDG) of panels were annealed in a low DP atmosphere 213 K (-60 °C). The Fe-Zn intermetallics were formed both in areas where the Fe2Al5- x Zn x inhibition layer had not been formed and on top of non-stoichiometric Fe-Al-Zn crystals. Poor wetting was observed on panels annealed in a low DP atmosphere because of the formation of thick film-type oxides on the surface. After annealing in higher DP gas atmospheres, i.e., 263 K and 278 K (-10 °C and 5 °C), a continuous and fine-grained Fe2Al5- x Zn x layer was formed. No Fe-Zn intermetallics were formed. The small grain size of the inhibition layer was attributed to the nucleation of the Fe2Al5- x Zn x grains on small ferrite sub-surface grains and the presence of granular surface oxides. A high DP atmosphere can therefore significantly contribute to the decrease of Zn-coating defects on CMnSi TRIP steels processed in HDG lines.

CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paranthaman, Mariappan Parans

We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCOmore » wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.« less

Design for Oxidation Resistance

NASA Technical Reports Server (NTRS)

Smialek, James L.; Schaeffer, Jon C.; Barrett, Charles A.

1997-01-01

Alloys intended for use in high-temperature environment rely on the formation of a continuous, compact, slow-growing oxide layer for oxidation and hot corrosion resistance. To be protective, this oxide layer must be chemically, thermodynamically stable. Successful alloy design for oxidative environment is best achieved by developing alloys that are capable of forming adherent scales of either alumina (Al2O3), chromia (Cr2O3), or silica (SiO2). In this article, emphasis has been placed on the issue related to high-temperature oxidation of superalloys used in gas turbine engine application. Despite the complexity of these alloys, optimal performance has been associated with protective alumina scale formation. As will be described below, both compositional makeup and protective coatings play key role in providing oxidation protection. Other high-temperature materials described include nickel and titanium aluminide intermetallics, refractory metal, and ceramics.

Effects of alloy heat treatment on oxidation kinetics and scale morphology for Crofer 22 APU

NASA Astrophysics Data System (ADS)

Magdefrau, Neal J.; Chen, Lei; Sun, Ellen Y.; Aindow, Mark

2013-11-01

The effect of alloy heat treatment on the oxidation kinetics and oxide scale microstructure of Crofer 22 APU has been studied. Parabolic oxidation rate constants were measured for the as-received alloy and after pre-oxidation heat treatment in argon at 1050 °C for 1 and 4 h. The oxide scale microstructure was investigated using scanning electron microscopy, focused ion beam milling and transmission electron microscopy. It was found that the alloy forms a two-layer scale with a continuous chromia layer and a discontinuous MnCr2O4 overlayer. Two forms of internal oxides were also formed: subscale pockets of spinel and isolated TiOx precipitates in the underlying alloy. The pre-oxidation heat treatment had a profound effect on the grain size and morphology of the Cr2O3 and MnCr2O4 layers in the scale. The heat-treated samples exhibit a 3.5× lower parabolic oxidation rate constant than the as-received Crofer 22 APU. This improvement in oxidation resistance is attributed to the dramatic differences in the morphology of the oxide scale that forms during the earliest stages of oxidation (<5 h). The implications of these findings for oxidation mechanisms and long-term SOFC performance are discussed.

Investigation of the oxidation behavior of dispersion stabilized alloys when exposed to a dynamic high temperature environment

NASA Technical Reports Server (NTRS)

Tenney, D. R.

1974-01-01

The oxidation behavior of TD-NiCr and TD-NiCrAlY alloys have been studied at 2000 and 2200 F in static and high speed flowing air environments. The TD-NiCrAlY alloys preoxidized to produce an Al2O3 scale on the surface showed good oxidation resistance in both types of environments. The TD-NiCr alloy which had a Cr2O3 oxide scale after preoxidation was found to oxidize more than an order of magnitude faster under the dynamic test conditions than at comparable static test conditions. Although Cr2O3 normally provides good oxidation protection, it was rapidly lost due to formation of volatile CrO3 when exposed to the high speed air stream. The preferred oxide arrangement for the dynamic test consisted of an external layer of NiO with a porous mushroom type morphology, an intermediate duplex layer of NiO and Cr2O3, and a continuous inner layer of Cr2O3 in contact with the alloy substrate. An oxidation model has been developed to explain the observed microstructure and overall oxidation behavior of all alloys.

Plasma Spray and Pack Cementation Process Optimization and Oxidation Behaviour of Novel Multilayered Coatings

NASA Astrophysics Data System (ADS)

Gao, Feng

The hot section components in gas turbines are subjected to a harsh environment with the temperature being increased continuously. The higher temperature has directly resulted in severe oxidation of these components. Monolithic coatings such as MCrAIY and aluminide have been traditionally used to protect the components from oxidation; however, increased operating temperature quickly deteriorates the coatings due to accelerated diffusion of aluminum in the coatings. To improve the oxidation resistance a group of multilayered coatings are developed in this study. The multilayered coatings consist of a Cr-Si co-deposited layer as the diffusion barrier, a plasma sprayed NiCrA1Y coating as the middle layer and an aluminized top layer. The Cr-Si and aluminized layers are fabricated using pack cementation processes and the NiCrA1Y coatings are produced using the Mettech Axial III(TM) System. All of the coating processes are optimized using the methodology of Design of Experiments (DOE) and the results are analyzed using statistical method. The optimal processes are adopted to fabricate the multilayered coatings for oxidation tests. The coatings are exposed in air at 1050°C and 1150°C for 1000 hr. The results indicate that a Cr layer and a silicon-rich barrier layer have formed on the interface between the Cr-Si coating and the NiCrA1Y coating. This barrier layer not only prevents aluminum and chromium from diffusing into the substrate, but also impedes the diffusion of other elements from the substrate into the coating. The results also reveal that, for optimal oxidation resistance at 1050°C, the top layer in a multilayered coating should have at least Al/Ni ratio of one; whereas the multilayered coating with the All Ni ratio of two in the top layer exhibits the best oxidation resistance at 1150°C. The DOE methodology provides an excellent means for process optimization and the selection of oxidation test matrix, and also offers a more thorough understanding of the effects of process parameters on the coating microstructure, and the effects of layers and their interactions on the oxidation behavior of the multilayered coatings.

Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

NASA Astrophysics Data System (ADS)

Pligovka, A.; Zakhlebayeva, A.; Lazavenka, A.

2018-03-01

Niobium oxide nanocolumns with modulated diameters were formed for the first time. An Al/Nb bilayer specimen was prepared by successive sputter-deposition of 300 nm niobium layer and 1200 nm aluminum layer onto silicon wafer. Regular anodic alumina matrix with modulated pore diameters was formed by sequential anodization of initial specimen in tartaric acid at 180 V, and in oxalic acid at 37 V. Further potentiodynamic reanodization of the specimen up to 400 V causes the simultaneous growth of 440 nm continuous niobium oxide layer beneath the alumina film and two types of an array of oxide nanocolumns (thick – with 100 nm width and 630 nm high and thin – with 25 nm width and 170 nm high), which are the filling of the alumina pores. The morphology of the formed anodic niobium oxide nanocolumns with modulated diameters was determined by field emission scanning electron microscopy. The formed nanostructures can be used for perspective devices of nano- and optoelectronics such as photonic crystals.

Solid oxide fuel cell cathode with oxygen-reducing layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surdoval, Wayne A.; Berry, David A.; Shultz, Travis

The disclosure provides a SOFC comprised of an electrolyte, anode, and cathode, where the cathode comprises an MIEC and an oxygen-reducing layer. The oxygen-reducing layer is in contact with the MIEC, and the MIEC is generally between and separating the oxygen-reducing layer and the electrolyte. The oxygen-reducing layer is comprised of single element oxides, single element carbonates, or mixtures thereof, and has a thickness of less than about 30 nm. In a particular embodiment, the thickness is less than 5 nm. In another embodiment, the thickness is about 3 monolayers or less. The oxygen-reducing layer may be a continuous filmmore » or a discontinuous film with various coverage ratios. The oxygen-reducing layer at the thicknesses described may be generated on the MIEC surface using means known in the art such as, for example, ALD processes.« less

Unitary plate electrode

NASA Technical Reports Server (NTRS)

Rowlette, John J. (Inventor); Clough, Thomas J. (Inventor); Josefowicz, Jack Y. (Inventor); Sibert, John W. (Inventor)

1985-01-01

The unitary electrode (10) comprises a porous sheet (12) of fiberglass the strands (14) of which contain a coating (16) of conductive tin oxide. The lower portion of the sheet contains a layer (18) of resin and the upper layer (20) contains lead dioxide forming a positive active electrode on an electrolyte-impervious layer. The strands (14) form a continuous conduction path through both layers (16, 18). Tin oxide is prevented from reduction by coating the surface of the plate facing the negative electrode with a conductive, impervious layer resistant to reduction such as a thin film (130) of lead or graphite filled resin adhered to the plate with a layer (31) of conductive adhesive. The plate (10) can be formed by casting a molten resin from kettle (60) onto a sheet of glass wool (56) overlying a sheet of lead foil and then applying positive active paste from hopper (64) into the upper layer (68). The plate can also be formed by passing an assembly of a sheet ( 80) of resin, a sheet (86) of sintered glass and a sheet (90) of lead between the nip (92) of heated rollers (93, 95) and then filling lead oxide into the pores (116) of the upper layer (118).

Variable temperature semiconductor film deposition

DOEpatents

Li, X.; Sheldon, P.

1998-01-27

A method of depositing a semiconductor material on a substrate is disclosed. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Variable temperature semiconductor film deposition

DOEpatents

Li, Xiaonan; Sheldon, Peter

1998-01-01

A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Final Report For The Erosion And Corrosion Analysis Of Waste Transfer Primary Pipeline Sections From 241-SY Tank Farm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Page, J. S.; Wyrwas, R. B.; Cooke, G. A.

Three sections of primary transfer pipeline removed from the 241-SY Tank Farm in Hanford's 200 West area, labeled as SN-285, SN-286, and SN-278, were analyzed for the presence and amount of corrosion and erosion on the inside surface of the transfer pipe. All three sections of pipe, ranging in length between 6 and 8 in., were received at the 222-S Laboratory still in the pipe-in-pipe assembly. The annular spaces were filled with urethane foam injected into the pipes for as low as reasonably achievable (ALARA) purposes. The 3-in. primary transfer pipes were first separated from the outer encasement, 6-in. pipes.more » The pipes were cut into small sections, or coupons, based upon the results of a non-destructive pipe wall thickness measurement which used an ultrasonic transducer. Following removal of the foam, the coupons were subjected to a series of analytical methods utilizing both optical microscopy and scanning electron microscopy to obtain erosion and corrosion information. The ultrasonic transducer analysis of the SN-285 primary pipe did not show any thinned locations in the pipe wall which were outside the expected range for the 3-in. schedule 40 pipe of 216 mils. A coupon was cut from the thinnest area on the pipe, and analysis of the inside surface, which was in contact with the tank waste, revealed a continuous layer of corrosion ~ 100 11m (4 mils) thick under a semi-continuous layer of tank waste residue ~ 20 11m (1 mil) thick. This residue layer was composed of an amorphous phase rich in chromium, magnesium, calcium, and chlorine. Small pits were detected throughout the inside pipe surface with depths up to ~ 50 11m (2 mils). Similarly, the SN-286 primary pipe did not show, by the ultrasonic transducer measurements, any thinned locations in the pipe wall which were outside the expected range for this pipe. Analysis of the coupon cut from the pipe section showed the presence of a tank waste layer containing sodium aluminate and phases rich in iron, calcium, and chromium. This layer was removed by a cleaning process that left a pipe surface continuous in iron oxide/hydroxide (corrosion) with pockets of aluminum oxide, possibly gibbsite. The corrosion layer was ~ 50 11m (2 mil) thick over non-continuous pits less than ~ 50 11m deep (2 mils). Small particles of aluminum oxide were also detected under the corrosion layer. The ultrasonic transducer analysis of SN-278, like the previous primary pipes, did not reveal any noticeable thinning of the pipe wall. Analysis of the coupon cut from the pipe showed that the inside surface had a layer of tank waste residue that was partially detached from the pipe wall. This layer was easily scraped from the surface and was composed of two separate layers. The underlying layer was ~ 350 11m (14 mils) thick and composed of a cementation of small aluminum oxide (probably gibbsite) particles. A thinner layer on top of the aluminum oxide layer was rich in carbon and chlorine. Scattered pitting was observed on the inside pipe surface with one pit as deep as 200 11m (8 mils).« less

The growth of protective ultra-thin alumina layers on γ-TiAl(1 1 1) intermetallic single-crystal surfaces

NASA Astrophysics Data System (ADS)

Maurice, V.; Despert, G.; Zanna, S.; Josso, P.; Bacos, M.-P.; Marcus, P.

2005-12-01

An XPS and AES study of the early stages of oxidation of γ-TiAl(1 1 1) surfaces at 650 °C under 1.0 × 10 -7-1.0 × 10 -6 mbar O 2 is reported. The data evidence a first regime of oxidation characterized by the growth of a pure alumina layer followed by a second regime of simultaneous oxidation of both alloying elements. In the first regime, continuous alumina layers from ˜0.4 to ˜1.5 nm thick have been observed by angle-resolved XPS. The composition of the metallic phase underneath the growing oxide is modified by a depletion of Al and the injection of Al vacancies in the metal during the growth of the transient alumina formed at 650 °C. The onset of Ti oxidation was repeatedly observed for a critical concentration in the modified region of the alloy underneath the alumina layer: Ti 75±2Al 25±2 (Ti 50Al 17±2V(Al) 33±2), showing that decreasing the number of Ti-Al bonds in the modified intermetallic region increases the activity of Ti up to a critical point where its oxidation at the oxide/metal interface becomes competitive with that of Al. The growth of Ti 3+ and Ti 4+ oxide particles observed above the alumina layer by angle-resolved XPS indicates the transport of titanium cations trough the alumina layer and their subsequent reaction with oxygen at the outer gas/oxide interface. Improving structural ordering in the intermetallic phase slows down the growth kinetics of the alumina layer and the related Al-depletion of the substrate, and increases the resistance of the alloy to the subsequent oxidation of Ti. This is assigned to two combined effects: a slower diffusion of Al in the better ordered metallic phase and the growth of less defective alumina layers allowing to slow down the ionic transport through the oxide. Highly stable and corrosion resistant alloy surfaces covered by a 0.4 nm thick alumina layer have been obtained by slowly oxidizing the alloy at lower partial pressure (<5.0 × 10 -10 mbar O 2).

Compositional control of continuously graded anode functional layer

NASA Astrophysics Data System (ADS)

McCoppin, J.; Barney, I.; Mukhopadhyay, S.; Miller, R.; Reitz, T.; Young, D.

2012-10-01

In this work, solid oxide fuel cells (SOFC's) are fabricated with linear-compositionally graded anode functional layers (CGAFL) using a computer-controlled compound aerosol deposition (CCAD) system. Cells with different CGAFL thicknesses (30 um and 50 um) are prepared with a continuous compositionally graded interface deposited between the electrolyte and anode support current collecting regions. The compositional profile was characterized using energy dispersive X-ray spectroscopic mapping. An analytical model of the compound aerosol deposition was developed. The model predicted compositional profiles for both samples that closely matched the measured profiles, suggesting that aerosol-based deposition methods are capable of creating functional gradation on length scales suitable for solid oxide fuel cell structures. The electrochemical performances of the two cells are analyzed using electrochemical impedance spectroscopy (EIS).

Dynamic oxidation behavior of TD-NiCr alloy with different surface pretreatments

NASA Technical Reports Server (NTRS)

Young, C. T.; Tenney, D. R.; Herring, H. W.

1975-01-01

Oxidation tests of TD-NiCr alloy with different surface pretreatments were conducted in a Mach-5 arc-jet at 1200 C and 0.002 lb/sec flowing air environment. The mechanisms responsible for the observed oxidation behavior are examined. The presence of atomic oxygen in the air stream plays a significant role in determining the oxidation characteristic of the alloy. The rate of Cr2O3 vaporization by formation of volatile CrO3 is greatly enhanced by the flowing conditions. The typical microstructure of oxides formed in the dynamic tests consists of an external layer of NiO with a porous mushroom-type morphology, an intermediate layer of NiO and Cr2O3 oxide mixture, and a continuous inner layer of Cr2O3 in contact with the Cr-depleted alloy substrate. Three basic processes underlying the formation of mushroom-type NiO are identified and discussed. The oxidation rate is determined by the rate of vaporization of NiO. Surface pretreatment has a significant effect on the oxidation behavior of the alloy in the early stage of oxidation, but becomes less important as exposure time increases. Mechanical polishing induces surface recrystallization, but promotes the concurrence of external growth of NiO and internal oxidation of the alloy in the dynamic atmosphere.

Coastal Benthic Boundary Layer (CBBL) Research Program: A review of the fourth year

DTIC Science & Technology

1998-09-01

followed by manganese oxide, nitrate , iron oxides, and sulfate. Some of these reactions produce protons, which promote the dissolution of carbonate...investigated. Specific activities during FY97 include: (1) continued multiscale analysis of Eckernförde sediments with inclusions of Key West...certain bacteria can then mediate organic matter oxidation (and obtain energy in the process) using nitrate as the terminal electron acceptor rather than

Atomic Layer Deposition of Titanium Oxide on Single-Layer Graphene: An Atomic-Scale Study toward Understanding Nucleation and Growth

PubMed Central

2017-01-01

Controlled synthesis of a hybrid nanomaterial based on titanium oxide and single-layer graphene (SLG) using atomic layer deposition (ALD) is reported here. The morphology and crystallinity of the oxide layer on SLG can be tuned mainly with the deposition temperature, achieving either a uniform amorphous layer at 60 °C or ∼2 nm individual nanocrystals on the SLG at 200 °C after only 20 ALD cycles. A continuous and uniform amorphous layer formed on the SLG after 180 cycles at 60 °C can be converted to a polycrystalline layer containing domains of anatase TiO2 after a postdeposition annealing at 400 °C under vacuum. Using aberration-corrected transmission electron microscopy (AC-TEM), characterization of the structure and chemistry was performed on an atomic scale and provided insight into understanding the nucleation and growth. AC-TEM imaging and electron energy loss spectroscopy revealed that rocksalt TiO nanocrystals were occasionally formed at the early stage of nucleation after only 20 ALD cycles. Understanding and controlling nucleation and growth of the hybrid nanomaterial are crucial to achieving novel properties and enhanced performance for a wide range of applications that exploit the synergetic functionalities of the ensemble. PMID:28356613

High-Temperature, Dual-Atmosphere Corrosion of Solid-Oxide Fuel Cell Interconnects

NASA Astrophysics Data System (ADS)

Gannon, Paul; Amendola, Roberta

2012-12-01

High-temperature corrosion of ferritic stainless steel (FSS) surfaces can be accelerated and anomalous when it is simultaneously subjected to different gaseous environments, e.g., when separating fuel (hydrogen) and oxidant (air) streams, in comparison with single-atmosphere exposures, e.g., air only. This so-called "dual-atmosphere" exposure is realized in many energy-conversion systems including turbines, boilers, gasifiers, heat exchangers, and particularly in intermediate temperature (600-800°C) planar solid-oxide fuel cell (SOFC) stacks. It is generally accepted that hydrogen transport through the FSS (plate or tube) and its subsequent integration into the growing air-side surface oxide layer can promote accelerated and anomalous corrosion—relative to single-atmosphere exposure—via defect chemistry changes, such as increased cation vacancy concentrations, decreased oxygen activity, and steam formation within the growing surface oxide layers. Establishment of a continuous and dense surface oxide layer on the fuel side of the FSS can inhibit hydrogen transport and the associated effects on the air side. Minor differences in FSS composition, microstructure, and surface conditions can all have dramatic influences on dual-atmosphere corrosion behaviors. This article reviews high-temperature, dual-atmosphere corrosion phenomena and discusses implications for SOFC stacks, related applications, and future research.

High-temperature oxidation behavior and mechanism of a new type of wrought Ni-Fe-Cr-Al superalloy up to 1300 C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, J.; Fang, H.; Fu, X.

The oxidation behavior of a new type of wrought Ni-Fe-Cr-Al superalloys has been investigated systematically in the temperature range of 1,100 to 1,300 C. Results are compared with those of alloy 214, Inconel 600, and GH 3030. It is shown that the oxidation resistance of the new superalloys is excellent and much better than that of the comparison alloys. Scanning electron microscopy (SEM), electron probe microanalysis (EPMA), and X-ray diffraction (XRD) experiments reveal that the excellent oxidation resistance of the new superalloy is due to the formation of a dense, stable and continuous Al{sub 2}O{sub 3} and Cr{sub 2}O{sub 3}more » oxide layer at high temperatures. Differential thermal analysis (DTA) shows that the formation of Cr{sub 2}O{sub 3} and Al{sub 2}O{sub 3} oxide layers on the new superalloy reaches a maximum at 1,060 and 1,356 C, respectively. The Cr{sub 2}O{sub 3} layer peels off easily, and the single dense Al{sub 2}O{sub 3} layer remains, giving good oxidation resistance at temperatures higher than 1,150 C. In addition, the new superalloy possesses high mechanical strength at high temperatures. On-site tests showed that the new superalloy has ideal oxidation resistance and can be used at high temperatures up to 1,300 C in various oxidizing and corrosion atmospheres, such as those containing SO{sub 2}, CO{sub 2} etc., for long periods.« less

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE PAGES

Tilka, J. A.; Park, J.; Ahn, Y.; ...

2018-02-26

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

Stressor-layer-induced elastic strain sharing in SrTiO 3 complex oxide sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tilka, J. A.; Park, J.; Ahn, Y.

A precisely selected elastic strain can be introduced in submicron-thick single-crystal SrTiO 3 sheets using a silicon nitride stressor layer. A conformal stressor layer deposited using plasma-enhanced chemical vapor deposition produces an elastic strain in the sheet consistent with the magnitude of the nitride residual stress. Synchrotron x-ray nanodiffraction reveals that the strain introduced in the SrTiO 3 sheets is on the order of 10 -4, matching the predictions of an elastic model. Using this approach to elastic strain sharing in complex oxides allows the strain to be selected within a wide and continuous range of values, an effect notmore » achievable in heteroepitaxy on rigid substrates.« less

X-ray photoelectron spectroscopy study of the stability of Fomblin Z25 on the native oxide of aluminum

NASA Technical Reports Server (NTRS)

Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

1992-01-01

Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum, and onto sapphire surfaces, and their behavior at different temperatures was studied using X-ray photoelectron spectroscopy and temperature desorption spectroscopy (TDS). The interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on the clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. The native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At higher temperatures (150 C), degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formation of a debris layer.

High temperature oxidation of alumina forming cast austenitic stainless steels within an environment of pure steam

NASA Astrophysics Data System (ADS)

Prenzlow, Elmer A.

Steam cracking of hydrocarbons in the petrochemical industry is a multibillion dollar industry. The processes performed in these plants create byproducts that negatively affect the integrity of stainless steel piping through high temperature corrosion. Alloys used presently in industry rely on the formation of chromium oxide (chromia) as a protective layer between the bulk metal pipe and chemical byproducts. However, chromia can become susceptible to attack from aggressive species such as carbon, water vapor, and sulfur compounds, thus creating a need for a better protection method. A new series of austenitic stainless steels have been developed in recent years that, rather than forming chromia, create a protective layer of aluminum oxide (alumina) under oxidative conditions. These alloys have high nickel content for the stabilization of the austenitic phase, and a more thermodynamically stable oxide layer relative to the traditional chromia formers. Consequently, alumina forming alloys have been proposed as replacements for chromia forming alloys in the petrochemical industry. General oxidation testing has been performed on alumina forming alloys under dry and 10% water vapor conditions. However, oxidation conditions in industry resemble a 100% steam environment. Therefore, test methods to mimic such conditions are needed so that alloys can be tested and developed further for these applications. Four alloys with aluminum contents ranging from 2.6 to 3.9 wt% were cut from centrifugally cast pipes and subjected to oxidation in an environment of pure steam for up to 30 hours, at temperatures of 800 °C and 950 °C. Samples were analyzed using Raman, SEM, and EDS and showed a continuous alumina layer free of cracks. The alumina layer thickness increased with time. Additionally, larger thicknesses were observed in samples oxidized at 950 °C from those of 800 °C. Thickness measurements were used to calculate parabolic and non-parabolic oxidation rate constants. Samples were compared using calculated parabolic and modified parabolic rates of oxidation. Plots for the prediction of oxide layer thickness were generated both for the Wagner model of parabolic oxidation, and an experimentally determined modification to said model. Oxide scale thickness as formed in pure steam was shown to be related to the aluminum content of the alloy and the temperature and time of exposure. Further testing of alumina forming stainless steels in other concentrations of steam would allow for the determination of steam's effect on alumina formation kinetics. In addition, tests at additional temperatures between 800 and 950 °C would allow for the calculation of activation energies and full understanding of the oxide layer. Finally, the analysis of alumina layer thickness effects on coking performance in a petrochemical application would allow for the potential transition of these alloys into the commercial market.

Aligned coaxial tungsten oxide-carbon nanotube sheet: a flexible and gradient electrochromic film.

PubMed

Yao, Zhaojun; Di, Jiangtao; Yong, Zhenzhong; Zhao, Zhigang; Li, Qingwen

2012-08-25

We develop a simple dry wrapping method to fabricate a tungsten oxide (WO(3))/carbon nanotube (CNT) cable, in which WO(3) layers act as an electrochromic component while aligned CNTs as the core provide mechanical support and an anisotropic, continuous electron transport pathway. Interestingly, the resultant cable material exhibits an obvious gradient electrochromic phenomenon.

Materials science, integration, and performance characterization of high-dielectric constant thin film based devices

NASA Astrophysics Data System (ADS)

Fan, Wei

To overcome the oxidation and diffusion problems encountered during Copper integration with oxide thin film-based devices, TiAl/Cu/Ta heterostructure has been first developed in this study. Investigation on the oxidation and diffusion resistance of the laminate structure showed high electrical conductance and excellent thermal stability in oxygen environment. Two amorphous oxide layers that were formed on both sides of the TiAl barrier after heating in oxygen have been revealed as the structure that effectively prevents oxygen penetration and protects the integrity of underlying Cu layer. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were subsequently deposited on the Cu-based bottom electrode by RF magnetron sputtering to investigate the interaction between the oxide and Cu layers. The thickness of the interfacial layer and interface roughness play critical roles in the optimization of the electrical performance of the BST capacitors using Cu-based electrode. It was determined that BST deposition at moderate temperature followed by rapid thermal annealing in pure oxygen yields BST/Cu capacitors with good electrical properties for application to high frequency devices. The knowledge obtained on the study of barrier properties of TiAl inspired a continuous research on the materials science issues related to the application of the hybrid TiAlOx, as high-k gate dielectric in MOSFET devices. Novel fabrication process such as deposition of ultra-thin TiAl alloy layer followed by oxidation with atomic oxygen has been established in this study. Stoichiometric amorphous TiAlOx layers, exhibiting only Ti4+ and Al3+ states, were produced with a large variation of oxidation temperature (700°C to room temperature). The interfacial SiOx formation between TiAlOx and Si was substantially inhibited by the use of the low temperature oxidation process. Electrical characterization revealed a large permittivity of 30 and an improved band structure for the produced TiAlOx layers, compared with pure TiO2. A modified 3-element model was adopted to extract the true C-V behavior of the TiAlOx-based MOS capacitor. Extremely small equivalent oxide thickness (EOT) less than 0.5 nm with dielectric leakage 4˜5 magnitude lower than that for SiO2 has been achieved on TiAlOx layer as a result of its excellent dielectric properties.

Study of thickness and uniformity of oxide passivation with DI-O3 on silicon substrate for electronic and photonic applications

NASA Astrophysics Data System (ADS)

Sharma, Mamta; Hazra, Purnima; Singh, Satyendra Kumar

2018-05-01

Since the beginning of semiconductor fabrication technology evolution, clean and passivated substrate surface is one of the prime requirements for fabrication of Electronic and optoelectronic device fabrication. However, as the scale of silicon circuits and device architectures are continuously decreased from micrometer to nanometer (from VLSI to ULSI technology), the cleaning methods to achieve better wafer surface qualities has raised research interests. The development of controlled and uniform silicon dioxide is the most effective and reliable way to achieve better wafer surface quality for fabrication of electronic devices. On the other hand, in order to meet the requirement of high environment safety/regulatory standards, the innovation of cleaning technology is also in demand. The controlled silicon dioxide layer formed by oxidant de-ionized ozonated water has better uniformity. As the uniformity of the controlled silicon dioxide layer is improved on the substrate, it enhances the performance of the devices. We can increase the thickness of oxide layer, by increasing the ozone time treatment. We reported first time to measurement of thickness of controlled silicon dioxide layer and obtained the uniform layer for same ozone time.

Large-Scale Precise Printing of Ultrathin Sol-Gel Oxide Dielectrics for Directly Patterned Solution-Processed Metal Oxide Transistor Arrays.

PubMed

Lee, Won-June; Park, Won-Tae; Park, Sungjun; Sung, Sujin; Noh, Yong-Young; Yoon, Myung-Han

2015-09-09

Ultrathin and dense metal oxide gate di-electric layers are reported by a simple printing of AlOx and HfOx sol-gel precursors. Large-area printed indium gallium zinc oxide (IGZO) thin-film transistor arrays, which exhibit mobilities >5 cm(2) V(-1) s(-1) and gate leakage current of 10(-9) A cm(-2) at a very low operation voltage of 2 V, are demonstrated by continuous simple bar-coated processes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of an iral coated SiC-C functionally gradient composite for oxidation protection of graphite and carbon-carbon composites. Final report, 15 July 1992-14 July 1995

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richards, M.R.; Richards, A.C.; Ohuchi, F.S.

1995-10-27

This report is the final summary for AFOSR project number F49620-92-J-0367. The purpose of this research was to evaluate the oxidation protection afforded to graphite or C/C composites by combining IrAl with SiC-C functionally gradient coatings FGCs. This project involved the design and construction of a novel cold wall levitation chemical vapor deposition (LCVD) reactor capable of producing continuous FGCs, and the modification of an existing physical vapor deposition (PVD) system to allow for codeposition of Ir and Al. The SiC-C FGCs were produced using the SiCl4-C3H8-H2 gas system. By continuously varying the Si to C ratio in the gasmore » stream the composition of the coatings could be precisely controlled and tailored to fit a predetermined compositional profile. IrAl was deposited onto the SiC-C FGC by alternately depositing layers of Ir and Al and reacting them at 700 deg C, in vacuum, to form IrAl. Analysis of the as reacted film indicated that IrAl had indeed formed, however, a secondary reaction had occurred between the Ir and SiC producing IrSi3 and graphite. Cracking of the IrAl coating was also observed and was attributed to the CTE mismatch between SiC and the IrAl coating. Upon exposure to a high temperature oxidizing flame (<2100 deg C for 5 min.), the IrAl formed a protective layer of alumina, however, the extensive cracking of the IrAl layer allowed the SiC-C FGC layer to oxidize.« less

High rate buffer layer for IBAD MgO coated conductors

DOEpatents

Foltyn, Stephen R [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Arendt, Paul N [Los Alamos, NM

2007-08-21

Articles are provided including a base substrate having a layer of an oriented material thereon, and, a layer of hafnium oxide upon the layer of an oriented material. The layer of hafnium oxide can further include a secondary oxide such as cerium oxide, yttrium oxide, lanthanum oxide, scandium oxide, calcium oxide and magnesium oxide. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of hafnium oxide or layer of hafnium oxide and secondary oxide.

Performance evaluation of several commercial alloys in a reducing environment

NASA Astrophysics Data System (ADS)

Liu, Y.

Several commercial alloys including Ebrite, Crofer 22 APU, Haynes 230 and Haynes 242, which are candidates for intermediate-temperature solid oxide fuel cell (SOFC) interconnect materials, were isothermally and cyclically oxidized at 900 °C in the reducing atmosphere of Ar + 5 vol.% H 2 + 3 vol.% H 2O corresponding to the SOFC anode environment. Results indicate that these alloys exhibited good scale spallation resistance with the Ni-base alloys possessing better oxidation resistance over the Fe-base alloys. Both Mn-Cr spinel and Cr 2O 3 were formed in the oxide scales of these alloys. For Crofer 22 APU and Haynes 242, a continuous protective MnO and Mn-Cr spinel layer formed outside on the inner layer of Cr 2O 3. The increase in scale ASR after longer-term thermal exposure in the reducing environment was relatively slower for the Ni-base alloys than for the Fe-base alloys.

Actinide oxide photodiode and nuclear battery

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sykora, Milan; Usov, Igor

Photodiodes and nuclear batteries may utilize actinide oxides, such a uranium oxide. An actinide oxide photodiode may include a first actinide oxide layer and a second actinide oxide layer deposited on the first actinide oxide layer. The first actinide oxide layer may be n-doped or p-doped. The second actinide oxide layer may be p-doped when the first actinide oxide layer is n-doped, and the second actinide oxide layer may be n-doped when the first actinide oxide layer is p-doped. The first actinide oxide layer and the second actinide oxide layer may form a p/n junction therebetween. Photodiodes including actinide oxidesmore » are better light absorbers, can be used in thinner films, and are more thermally stable than silicon, germanium, and gallium arsenide.« less

The magnetic properties of a magnetic detector using oxidized amorphous Co 95- xFe 5(BSi) x alloys

NASA Astrophysics Data System (ADS)

Ahn, S. J.; Kim, C. K.; Kim, S. J.; Choi, D. K.; O'Handley, R. C.

2000-07-01

A comparative oxidation study of several amorphous Co 75- xFe 5(BSi) 20+ x alloys was carried out. Reentrant magnetization behavior and field-induced anisotropy which are of a critical importance for a magnetic detector were obtained after oxidation of the amorphous Co-rich ribbons. During this oxidation, the ribbons develop surface oxides which are primarily nonmagnetic borosilicate or a combination of borosilicate and magnetic oxides such CoO or FeO. Beneath this lies a 100-1000 Å thick Co-rich magnetic alloy which may be either HCP or FCC in its crystal structure. The thickness of the Co-crystallized layer is determined by the type of the surface oxides. The oxidation products such as appear to affect the reentrant magnetization behavior of Co-rich amorphous alloys significantly. We have determined the amount of metalloids (a critical concentration of B and Si) which is necessary to form a continuous layer of the most thermodynamically stable oxide, in our case borosilicate, on the surface. We also observed that there is a good correlation between reentrant magnetization and the thickness of Co layer. The best reentrant M- H loop for the magnetic detector was obtained in ribbons with a surface borate-rich borosilicate since it ensures conditions such as (1) metalloid depletion in the substrate and (2) formation of oxygen impurity faults in Co grains that are required for strong reentrant magnetization behavior.

Surface Selective Oxide Reduction During the Intercritical Annealing of Medium Mn Steel

NASA Astrophysics Data System (ADS)

Jo, Kyoung Rae; Cho, Lawrence; Oh, Jong Han; Kim, Myoung Soo; Kang, Ki Cheol; De Cooman, Bruno C.

2017-08-01

Third generation advanced high-strength steels achieve an excellent strength-ductility balance using a cost-effective alloy composition. During the continuous annealing of medium Mn steel, the formation of an external selective oxide layer of MnO has a negative impact on the coating quality after galvanizing. A procedure to reduce the selective oxide was therefore developed. It involves annealing in the temperature range of 1073 K to 1323 K (800 °C to 1050 °C) in a HNx gas atmosphere. Annealing at higher temperatures and the use of larger H2 volume fractions are shown to make the gas atmosphere reducing with respect to MnO. The reduction of the surface MnO layer was observed by SEM, GDOES, and cross-sectional TEM analysis.

In situ study of electric field controlled ion transport in the Fe/BaTiO3 interface

NASA Astrophysics Data System (ADS)

Merkel, D. G.; Bessas, D.; Bazsó, G.; Jafari, A.; Rüffer, R.; Chumakov, A. I.; Khanh, N. Q.; Sajti, Sz; Celse, J.-P.; Nagy, D. L.

2018-01-01

Electric field controlled ion transport and interface formation of iron thin films on a BaTiO3 substrate have been investigated by in situ nuclear resonance scattering and x-ray reflectometry techniques. At early stage of deposition, an iron-II oxide interface layer was observed. The hyperfine parameters of the interface layer were found insensitive to the evaporated layer thickness. When an electric field was applied during growth, a 10 Å increase of the nonmagnetic/magnetic thickness threshold and an extended magnetic transition region was measured compared to the case where no field was applied. The interface layer was found stable under this threshold when further evaporation occurred, contrary to the magnetic layer where the magnitude and orientation of the hyperfine magnetic field vary continuously. The obtained results of the growth mechanism and of the electric field effect of the Fe/BTO system will allow the design of novel applications by creating custom oxide/metallic nanopatterns using laterally inhomogeneous electric fields during sample preparation.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

An XPS study of the stability of Fomblin Z25 on the native oxide of aluminum. [x ray photoelectron spectroscopy

NASA Technical Reports Server (NTRS)

Herrera-Fierro, Pilar; Pepper, Stephen V.; Jones, William R.

1991-01-01

Thin films of Fomblin Z25, a perfluoropolyalkylether lubricant, were vapor deposited onto clean, oxidized aluminum and sapphire surfaces, and their behavior at different temperatures was studied using x ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that the interfacial fluid molecules decompose on the native oxide at room temperature, and continue to decompose at elevated temperatures, as previous studies had shown to occur on clean metal. TDS indicated that different degradation mechanisms were operative for clean and oxidized aluminum. On sapphire substrates, no reaction was observed at room temperature. Our conclusion is that the native oxide of aluminum is neither passive nor protective towards Fomblin Z25. At high temperatures (150 C) degradation of the polymer on sapphire produced a debris layer at the interface with a chemical composition similar to the one formed on aluminum oxide. Rubbing a Fomblin film on a single crystal sapphire also induced the decomposition of the lubricant in contact with the interface and the formulation of a debris layer.

Photoconductivity of Macroporous and Nonporous Silicon with Ultrathin Oxide Layers

NASA Astrophysics Data System (ADS)

Konin, K. P.; Goltvyansky, Yu. V.; Karachevtseva, L. A.; Karas, M. I.; Morozovs'ka, D. V.

2018-06-01

The photoconductivity of macroporous silicon with ultrathin oxide layers of 2.7-30 nm in thickness at short-wave optical excitation was studied. The following feature was revealed: a nonmonotonic change in the photoconductivity as a function of the oxide thickness. At a minimum thickness, the photoconductivity is negative; in the interval 6.8-15 nm, it is very much suppressed; at 15-30 nm, it is positive. Suppression of photoconductivity over a wide thickness range indicates an abnormally high concentration of traps and capture centers for charge carriers of both signs. Such a change in the photoconductivity corresponds to the known results on the continuous morphological rearrangement of the oxide in the thickness range from 6-7 nm to 12-15 nm from the coesite-like (4-membered SiO4 tetrahedra rings) to the tridymite-like (6-membered SiO4 tetrahedra rings). The suppression of photoconductivity in the intermediate range probably demonstrates the collective, antisynergetic action of these coexisting oxide forms on the nonequilibrium charge carriers. These coexisting oxide forms manifest themselves as an unusual collective defect.

Aligned carbon nanotube, graphene and graphite oxide thin films via substrate-directed rapid interfacial deposition

NASA Astrophysics Data System (ADS)

D'Arcy, Julio M.; Tran, Henry D.; Stieg, Adam Z.; Gimzewski, James K.; Kaner, Richard B.

2012-05-01

A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated.A procedure for depositing thin films of carbon nanostructures is described that overcomes the limitations typically associated with solution based methods. Transparent and conductively continuous carbon coatings can be grown on virtually any type of substrate within seconds. Interfacial surface tension gradients result in directional fluid flow and film spreading at the water/oil interface. Transparent films of carbon nanostructures are produced including aligned ropes of single-walled carbon nanotubes and assemblies of single sheets of chemically converted graphene and graphite oxide. Process scale-up, layer-by-layer deposition, and a simple method for coating non-activated hydrophobic surfaces are demonstrated. Electronic supplementary information (ESI) available: Droplet coalescence, catenoid formation, mechanism of film growth, scanning electron micrographs showing carbon nanotube alignment, flexible transparent films of SWCNTs, AFM images of a chemically converted graphene film, and SEM images of SWCNT free-standing thin films. See DOI: 10.1039/c2nr00010e

Hafnium influence on the microstructure of FeCrAl alloys

NASA Astrophysics Data System (ADS)

Geanta, V.; Voiculescu, I.; Stanciu, E.-M.

2016-06-01

Due to their special properties at high temperatures, FeCrAl alloys micro-alloyed with Zr can be regarded as potential materials for use at nuclear power plants, generation 4R. These materials are resistant to oxidation at high temperatures, to corrosion, erosion and to the penetrating radiations in liquid metal environments. Also, these are able to form continuously, by the self-generation process of an oxide coating with high adhesive strength. The protective oxide layers must be textured and regenerable, with a good mechanical strength, so that crack and peeling can not appear. To improve the mechanical and chemical characteristics of the oxide layer, we introduced limited quantities of Zr, Ti, Y, Hf, Ce in the range of 1-3%wt in the FeCrAl alloy. These elements, with very high affinity to the oxygen, are capable to stabilize the alumina structure and to improve the oxide adherence to the metallic substrate. FeCrAl alloys microalloyed with Hf were prepared using VAR (Vacuum Arc Remelting) unit, under high argon purity atmosphere. Three different experimental alloys have been prepared using the same metallic matrix of Fe-14Cr-5Al, by adding of 0.5%wt Hf, 1.0%wt Hf and respectively 1.5%wt Hf. The microhardness values for the experimental alloys have been in the range 154 ... 157 HV0.2. EDAX analyses have been performed to determine chemical composition on the oxide layer and in the bulk of sample and SEM analyze has been done to determine the microstructural features. The results have shown the capacity of FeCrAl alloy to form oxide layers, with different texture and rich in elements such as Al and Hf.

Oxidation behavior of Al/Cr coating on Ti2AlNb alloy at 900 °C

NASA Astrophysics Data System (ADS)

Yang, Zhengang; Liang, Wenping; Miao, Qiang; Chen, Bowen; Ding, Zheng; Roy, Nipon

2018-04-01

In this paper, the Al/Cr coating was fabricated on the surface of Ti2AlNb alloy via rf magnetron sputtering and double glow treatment to enhance oxidation resistance. The protective coating with an outer layer of Al and inner layer of Cr has great bonding strength due to the in-diffusion of Cr and the inter-diffusion between Al and Cr to form Al-Cr alloyed layer which has great hardness. Acoustic emission curve which was detected via WS-2005 scratch tester indicates the bonding strength between Al/Cr coating and substrate is great. Morphology of Ti2AlNb alloy with Al/Cr coating after scratch test shows that the scratch is smooth without disbanding, and the depth and breadth of scratch are changed uniformly. The mass change was reduced after oxidation test due to the Al/Cr protective coating. Isothermal oxidation test at 900 °C was researched. Results indicate that Al/Cr coating provided oxidation resistance of Ti2AlNb alloy with prolonged air exposure at 900 °C. Al2O3 was detected by XRD patterns and SEM images, and was formed on the surface of Ti2AlNb alloy to protect substrate during oxidation test. A certain content of Cr is beneficial for the formation of Al2O3. Besides, Cr2O3 was produced under Al2O3 by outward diffusion of Cr to protect substrate sequentially, no cracks were discovered on Al/Cr protective coating. The process of Ti outward diffusion into surface was suppressive due to integration of Cr-Ti and Al-Ti intermetallics. A steady, adherent and continuous coated layer of Al/Cr on Ti2AlNb alloy increases oxidation resistance.

Silicide Coating Fabricated by HAPC/SAPS Combination to Protect Niobium Alloy from Oxidation.

PubMed

Sun, Jia; Fu, Qian-Gang; Guo, Li-Ping; Wang, Lu

2016-06-22

A combined silicide coating, including inner NbSi2 layer and outer MoSi2 layer, was fabricated through a two-step method. The NbSi2 was deposited on niobium alloy by halide activated pack cementation (HAPC) in the first step. Then, supersonic atmospheric plasma spray (SAPS) was applied to obtain the outer MoSi2 layer, forming a combined silicide coating. Results show that the combined coating possessed a compact structure. The phase constitution of the combined coating prepared by HAPC and SAPS was NbSi2 and MoSi2, respectively. The adhesion strength of the combined coating increased nearly two times than that for single sprayed coating, attributing to the rougher surface of the HAPC-bond layer whose roughness increased about three times than that of the grit-blast substrate. After exposure at 1200 °C in air, the mass increasing rate for single HAPC-silicide coating was 3.5 mg/cm(2) because of the pest oxidation of niobium alloy, whereas the combined coating displayed better oxidation resistance with a mass gain of only 1.2 mg/cm(2). Even more, the combined coating could significantly improve the antioxidation ability of niobium based alloy at 1500 °C. The good oxidation resistance of the combined silicide coating was attributed to the integrity of the combined coating and the continuous SiO2 protective scale provided by the oxidation of MoSi2.

Thermal barrier coatings

DOEpatents

Alvin, Mary Anne [Pittsburg, PA

2010-06-22

This disclosure addresses the issue of providing a metallic-ceramic overlay coating that potentially serves as an interface or bond coat layer to provide enhanced oxidation resistance to the underlying superalloy substrate via the formation of a diffusion barrier regime within the supporting base material. Furthermore, the metallic-ceramic coating is expected to limit the growth of a continuous thermally grown oxide (TGO) layer that has been primarily considered to be the principal cause for failure of existing TBC systems. Compositional compatibility of the metallic-ceramic with traditional yttria-stabilized zirconia (YSZ) top coats is provided to further limit debond or spallation of the coating during operational use. A metallic-ceramic architecture is disclosed wherein enhanced oxidation resistance is imparted to the surface of nickel-based superalloy or single crystal metal substrate, with simultaneous integration of the yttria stabilized zirconia (YSZ) within the metallic-ceramic overlayer.

Fabrication and Characterization of Functionally Graded Cathodes for Solid Oxide Fuel Cells

NASA Astrophysics Data System (ADS)

Simonet, J.; Kapelski, G.; Bouvard, D.

2008-02-01

Solid oxide fuel cells are multi-layered designed. The most prevalent structure is an anode supported cell with a thick porous layer of nickel oxide NiO and yttrium stabilized zirconia (YSZ) composite acting as an anode, a thin dense layer of YSZ as an electrolyte, a composite thin porous layer of lanthanum strontium manganate LSM and YSZ and a current collector layer of porous LSM. Regular operating temperature is 1000 °C. The industrial development requires designing cathodes with acceptable electrochemical and mechanical properties at a lower temperature, typically between 700 and 800 °C. A solution consists in designing composite bulk cathodes with more numerous electro-chemical reaction sites. This requirement could be met by grading the composition of the cathode in increasing the YSZ volume fraction near the electrolyte and the LSM volume fraction near the current collector layer so that the repartition of reaction sites and the interfacial adhesion between the cathode and electrolyte layers are optimal. The fabrication of graded composite cathode has been investigated using a sedimentation process that consists of preparing a suspension containing the powder mixture and allowing the particles to fall by gravity upon a substrate. Different composite cathodes with continuous composition gradient have been obtained by sedimentation of LSM and YSZ powder mixture upon a dense YSZ substrate and subsequent firing. Their compositions and microstructures have been analysed with Scanning Electron Microscope (SEM) and Electron Dispersive Spectrometry (EDS).

Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Jia, Quanxi

2005-07-26

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Corrosion behavior of pre-oxidized HR-224 superalloy in supercritical water environment at 700 °C

NASA Astrophysics Data System (ADS)

Liu, Yu-Chen; Chen, Shih-Ming; Ouyang, Fan-Yi; Kai, Ji-Jung

2018-07-01

Corrosion of cladding materials in supercritical water (SCW) environment is a key reliability issue for the safety of nuclear power plant. In this study, we propose to use the pre-oxidized treatment to provide better corrosion resistance of cladding materials in the SCW environment. The nickel-based superalloy HR-224 was first pre-oxidized in flowing air at 982 °C for 100 h to establish a continuous and dense scales and then exposed in the SCW environment with high oxygen content (8.3 ppm) at 700 °C and 24.8 MPa for cyclic oxidation testing up to 1300 h. The pre-oxidized samples exhibit better corrosion resistance than as-received samples in the SCW environment. After pre-oxidizing process, triple scales, Ni(Cr, Fe)2O4 spinel/Cr2O3/α-Al2O3 were observed, and the growth of inner α-Al2O3 layer is predominant in the SCW environment. The α-Al2O3 layer in pre-oxidized samples was found to effectively decrease outward migration of metal ions in Alloy HR-224 and thus provides better corrosion resistance than as-received samples in SCW environment.

High Temperature Superconducting Thick Films

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Holesinger, Terry G.; Jia, Quanxi

2005-08-23

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

Native oxide transport and removal during the atomic layer deposition of Ta{sub 2}O{sub 5} on InAs(100) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henegar, Alex J.; Gougousi, Theodosia, E-mail: gougousi@umbc.edu

Atomic layer deposition (ALD) was used to deposit Ta{sub 2}O{sub 5} on etched and native oxide-covered InAs(100) using pentakis dimethyl amino tantalum and H{sub 2}O at 200–300 °C. The transport and removal of the native oxides during the ALD process was investigated using x-ray photoelectron spectroscopy (XPS). Depositions above 200 °C on etched surfaces protected the interface from reoxidation. On native oxide-covered surfaces, depositions resulted in enhanced native oxide removal at higher temperatures. The arsenic oxides were completely removed above 250 °C after 3 nm of film growth, but some of the As{sub 2}O{sub 3} remained in the film at lower temperatures. Angle-resolved andmore » sputter depth profiling XPS confirmed indium and arsenic oxide migration into the Ta{sub 2}O{sub 5} film at deposition temperatures as low as 200 °C. Continuous removal of both arsenic and indium oxides was confirmed even after the deposition of several monolayers of a coalesced Ta{sub 2}O{sub 5} film, and it was demonstrated that native oxide transport is a prevalent component of the interface “clean-up” mechanism.« less

Observation of Electron-Beam-Induced Phase Evolution Mimicking the Effect of the Charge–Discharge Cycle in Li-Rich Layered Cathode Materials Used for Li Ion Batteries

DOE PAGES

Lu, Ping; Yan, Pengfei; Romero, Eric; ...

2015-01-27

Capacity loss, and voltage decrease upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[Li xMn yTM 1-x-y]O 2, TM = Ni, Co or Fe) have recently been attributed to the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li 0.2Ni 0.2Mn 0.6]O 2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle butmore » are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by electron dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. The observation through this study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Timing of Neogene Manganese Deposit Formation in the Paleo-Japan Sea, northeast Japan

NASA Astrophysics Data System (ADS)

Ito, T.; Orihashi, Y.; Yanagisawa, Y.; Sakai, S.; Motoyama, I.; Kamikuri, S. I.; Komuro, K.; Suzuki, K.

2017-12-01

The generation ages of the two Neogene manganese deposits in northeast Japan were determined by diatom and radiolarian biostratigraphic analyses and zircon U-Pb dating. The manganese deposits analyzed were from the Kitaichi and Maruyama mines in the Fukaura district, northeast Japan. Manganese oxide layers of 0.5 m (Kitaichi) and 1.5 m (Maruyama) in thickness were predominantly composed of todorokite and occur conformably within volcanogenic sediments, which stratigraphically had correlated to middle Miocene in previous studies. The ages of the manganese oxide layers were 12.4 Ma. There was no time gap between the Kitaichi and the Maruyama manganese oxide layers, between the manganese oxide layer and the underlying tuffaceous sandstone in the Kitaichi mine, or within the manganese oxide layer of ca. 1.5 m thickness in the Maruyama mine. On the other hand, the overlying tuffaceous sandstone was dated at 4.5 Ma. The results suggest that the manganese oxide layers were formed immediately after the deposition of the tuffaceous sandstone at 12.4 Ma and that the restricted supply of volcanogenic and/or other detrital matter had kept for a long time (ca. 7 m.y.). The timing of the manganese deposit generation, 12.4 Ma, is identical to the age of the base of the Onnagawa Stage on the Nishikurosawa Stage in the Neogene stratotype section on the Japan Sea side, northeast Japan. And this is equivalent to the age of the start of diatom blooming. Paleogeographically, the manganese oxide deposition happened in a shallower area on a paleo-hill or a small island surrounded by stagnant mid to deep basins with diatom and organically carbon-rich, laminated, and fine-grained mud. It is highly probable that upwelling of mid to deep water rich in both dissolved manganese and nutrients is the trigger for the manganese deposit generation in shallower areas and the deposition of diatomaceous sediments in mid and deep basins. Eustatic regression might be the reason for the short-term formation of manganese deposits in shallower areas compared to continuous sedimentation ( several million years) of diatomaceous and organic carbon-rich mud in the surrounding mid to deep basins.

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

PubMed

Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

2018-01-22

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

A preliminary study of the electro-oxidation of L-ascorbic acid on polycrystalline silver in alkaline solution

NASA Astrophysics Data System (ADS)

Majari Kasmaee, L.; Gobal, F.

Electrochemical oxidation of L-ascorbic acid on polycrystalline silver in alkaline aqueous solutions is studied by cyclic voltammetry (CV), chronoamperometry (CA) and impedance spectroscopy (IS). The anodic electro-oxidation starts at -500 mV versus SCE and shows continued anodic oxidation in the cathodic half cycle in the CV regime signifying slowly oxidizing adsorbates. Diffusion coefficient of ascorbate ion measured under both voltammetric regimes is around 1.4 × 10 -5 cm 2 s -1. Impedance spectroscopy measures the capacitances associated with double layer and adsorption around 50 μF cm -2 and 4 mF cm -2 as well as the adsorption and decomposition resistances (rates).

A facile fabrication of chemically converted graphene oxide thin films and their uses as absorber materials for solar cells

NASA Astrophysics Data System (ADS)

Adelifard, Mehdi; Darudi, Hosein

2016-07-01

There is a great interest in the use of graphene sheets in thin film solar cells with low-cost and good-optoelectronic properties. Here, the production of absorbent conductive reduced graphene oxide (RGO) thin films was investigated. RGO thin films were prepared from spray-coated graphene oxide (GO) layers at various substrate temperature followed by a simple hydrazine-reducing method. The structural, morphological, optical, and electrical characterizations of graphene oxide (GO) and RGO thin films were investigated. X-ray diffraction analysis showed a phase shift from GO to RGO due to hydrazine treatment, in agreement with the FTIR spectra of the layers. FESEM images clearly exhibited continuous films resulting from the overlap of graphene nanosheets. The produced low-cost thin films had high absorption coefficient up to 1.0 × 105 cm-1, electrical resistance as low as 0.9 kΩ/sq, and effective optical band gap of about 1.50 eV, close to the optimum value for solar conversion. The conductive absorbent properties of the reduced graphene oxide thin films would be useful to develop photovoltaic cells.

Stabilized CdSe-CoPi composite photoanode for light-assisted water oxidation by transformation of a CdSe/cobalt metal thin film.

PubMed

Costi, Ronny; Young, Elizabeth R; Bulović, Vladimir; Nocera, Daniel G

2013-04-10

Integration of water splitting catalysts with visible-light-absorbing semiconductors would enable direct solar-energy-to-fuel conversion schemes such as those based on water splitting. A disadvantage of some common semiconductors that possess desirable optical bandgaps is their chemical instability under the conditions needed for oxygen evolution reaction (OER). In this study, we demonstrate the dual benefits gained from using a cobalt metal thin-film as the precursor for the preparation of cobalt-phosphate (CoPi) OER catalyst on cadmium chalcogenide photoanodes. The cobalt layer protects the underlying semiconductor from oxidation and degradation while forming the catalyst and simultaneously facilitates the advantageous incorporation of the cadmium chalcogenide layer into the CoPi layer during continued processing of the electrode. The resulting hybrid material forms a stable photoactive anode for light-assisted water splitting.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ping; Yan, Pengfei; Romero, Eric

Capacity loss, and voltage decrease upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[Li xMn yTM 1-x-y]O 2, TM = Ni, Co or Fe) have recently been attributed to the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li 0.2Ni 0.2Mn 0.6]O 2 (LNMO) particles, which are identical to those reported due to the charge-discharge cycle butmore » are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by electron dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LNMO is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. The observation through this study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Ping; Yan, Pengfei; Romero, Eric

Capacity loss, and voltage fade upon electrochemical charge-discharge cycling observed in lithium-rich layered cathode oxides (Li[LixMnyTM1-x-y]O2 , TM = Ni, Co or Fe) have recently been identified to be correlated to the gradual phase transformation, featuring the formation of a surface reconstructed layer (SRL) that evolves from a thin (<2 nm), defect spinel layer upon the first charge, to a relatively thick (~5 nm), spinel or rock-salt layer upon continuous charge-discharge cycling. Here we report observations of a SRL and structural evolution of the SRL on the Li[Li0.2Ni0.2Mn0.6]O2 (LMR) particles, which are identical to those reported due to the charge-dischargemore » cycle but are a result of electron-beam irradiation during scanning transmission electron microscopy (STEM) imaging. Sensitivity of the lithium-rich layered oxides to high-energy electrons leads to the formation of thin, defect spinel layer on surfaces of the particles when exposed to a 200 kV electron beam for as little as 30 seconds under normal high-resolution STEM imaging conditions. Further electron irradiation produces a thicker layer of the spinel phase, ultimately producing a rock-salt layer at a higher electron exposure. Atomic-scale chemical mapping by energy dispersive X-ray spectroscopy in STEM indicates the electron-beam-induced SRL formation on LMR is accomplished by migration of the transition metal ions to the Li sites without breaking down the lattice. This study provides an insight for understanding the mechanism of forming the SRL and also possibly a mean to study structural evolution in the Li-rich layered oxides without involving the electrochemistry.« less

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

NASA Astrophysics Data System (ADS)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Another Strategy, Detouring Potential Decay by Fast Completion of Cation Mixing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Shuai; Feng, Xin; Wang, Xuelong

The Li-rich layer-structured oxides are regarded one of the most promising candidates of cathode materials for high energy-density Li-ion batteries. However, the uninterrupted migration of the transition metal (TM) ions during cycling and the resultant continuous fading of their discharge potentials bring challenges to the battery design and impede their commercial applications. Various efforts have been taken to suppress the migration of the TM ions such as surface modification and elemental substitution, but no success has been achieved to date. Another strategy hereby is proposed to address these issues, in which the TM migration is promoted and the layered materialmore » is transformed to a rocksalt in the first few charge/discharge cycles by specially designing a novel Li-rich layer-structured Li 1.2Mo 0.6Fe 0.2O 2 on the basis of density functional theory calculations. With such, the continuous falling of the discharge potential is detoured due to enhanced completion of the cation mixing. In-depth studies such as aberration-corrected scanning transmission electron microscopy confirm the drastic structural change at the atomic scale, and in situ X-ray absorption spectroscopy and Mössbauer spectroscopy clarify its charge compensation mechanism. In conclusion, this new strategy provides revelation for the development of the Li-rich layered oxides with mitigated potential decay and a longer lifespan.« less

Another Strategy, Detouring Potential Decay by Fast Completion of Cation Mixing

DOE PAGES

Liu, Shuai; Feng, Xin; Wang, Xuelong; ...

2018-02-12

The Li-rich layer-structured oxides are regarded one of the most promising candidates of cathode materials for high energy-density Li-ion batteries. However, the uninterrupted migration of the transition metal (TM) ions during cycling and the resultant continuous fading of their discharge potentials bring challenges to the battery design and impede their commercial applications. Various efforts have been taken to suppress the migration of the TM ions such as surface modification and elemental substitution, but no success has been achieved to date. Another strategy hereby is proposed to address these issues, in which the TM migration is promoted and the layered materialmore » is transformed to a rocksalt in the first few charge/discharge cycles by specially designing a novel Li-rich layer-structured Li 1.2Mo 0.6Fe 0.2O 2 on the basis of density functional theory calculations. With such, the continuous falling of the discharge potential is detoured due to enhanced completion of the cation mixing. In-depth studies such as aberration-corrected scanning transmission electron microscopy confirm the drastic structural change at the atomic scale, and in situ X-ray absorption spectroscopy and Mössbauer spectroscopy clarify its charge compensation mechanism. In conclusion, this new strategy provides revelation for the development of the Li-rich layered oxides with mitigated potential decay and a longer lifespan.« less

Oxidation of high-temperature alloys (superalloys) at elevated temperatures in air: I

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hussain, N.; Shahid, K.A.; Rahman, S.

1994-04-01

Four commercial alloys - Hastelloy C-4, alloy 1.4306S (SS 304L), Incoloy 800H, and Incoloy 825 - were studied for their oxidation behavior at elevated temperatures. Specimens were exposed to air from 600 to 1200[degree]C for 1 to 400 hr. Reaction kinetics of oxidation were determined, and the morphology of the surface-oxide scales was investigated. Hastelloy C-4 showed better resistance to oxidation for exposure temperatures up to 1000[degree]C in comparison with the other three alloys. In this temperature range, it follows a cubic rate law of oxidation due to formation of uniform, protective, and adherent oxide scales. The latter three alloysmore » obeyed the parabolic rate law at 1000[degree]C and 1200[degree]C, but for lower temperatures a mixed behavior was shown. The oxide layer developed on the alloy 1.4306S was always in the form of stratified nodules/warts. For longer exposures the nodules joined each other to form continuous but discrete layers. Incoloy 800H and Incoloy 825 behaved in an almost identical manner, their reaction kinetics being governed by the parabolic rate law throughout the temperature range. Oxide spalling was observed at all temperatures. In contrast to Incoloy 800H the Incoloy 825 was totally oxidized for longer exposures at 1200[degree]C. 16 refs., 12 figs., 1 tab.« less

Structure for HTS composite conductors and the manufacture of same

DOEpatents

Cotton, J.D.; Riley, G.N. Jr.

1999-06-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (1) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (2) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer. 10 figs.

Structure for hts composite conductors and the manufacture of same

DOEpatents

Cotton, James D.; Riley, Jr., Gilbert Neal

1999-01-01

A superconducting oxide composite structure including a superconducting oxide member, a metal layer surrounding the superconducting oxide member, and an insulating layer of a complex oxide formed in situ adjacent to the superconducting oxide member and the metal layer is provided together with a method of forming such a superconducting oxide composite structure including encapsulating a superconducting oxide member or precursor within a metal matrix layer from the group of: (i) a reactive metal sheath adjacent to the superconducting oxide member or precursor, the reactive metal sheath surrounded by a second metal layer or (ii) an alloy containing a reactive metal; to form an intermediate product, and, heating the intermediate product at temperatures and for time sufficient to form an insulating layer of a complex oxide in situ, the insulating layer to the superconducting oxide member or precursor and the metal matrix layer.

Bias-polarity-dependent UV/visible transferable electroluminescence from ZnO nanorod array LED with graphene oxide electrode supporting layer

NASA Astrophysics Data System (ADS)

Liu, Weizhen; Wang, Wei; Xu, Haiyang; Li, Xinghua; Yang, Liu; Ma, Jiangang; Liu, Yichun

2015-09-01

A simple top electrode preparation process, employing continuous graphene oxide films as electrode supporting layers, was adopted to fabricate a ZnO nanorod array/p-GaN heterojunction LED. The achieved LED demonstrated different electroluminescence behaviors under forward and reverse biases: a yellow-red emission band was observed under forward bias, whereas a blue-UV emission peak was obtained under reverse bias. Electroluminescence spectra under different currents and temperatures, as well as heterojunction energy-band alignments, reveal that the yellow-red emission under forward bias originates from recombinations related to heterointerface defects, whereas the blue-UV electroluminescence under reverse bias is ascribed to transitions from near-band-edge and Mg-acceptor levels in p-GaN.

Arsenic silicide formation by oxidation of arsenic implanted silicon

NASA Astrophysics Data System (ADS)

Hagmann, D.; Euen, W.; Schorer, G.; Metzger, G.

1989-07-01

Wet oxidations of (100) silicon implanted with an arsenic dose of 2 × 1016 cm-2 and an energy of 30 keV were carried out in the temperature range between 600 and 900° C. The oxidation rate is increased on the arsenic implanted samples up to a factor of 2000 as compared to undoped samples. During these oxidations the arsenic suicide phase AsSi is precipitated at the oxide/silicon interface. After short oxidation times at 600° C, a continuous AsSi layer is found. It is dissolved during extended oxidation times and finally almost all As is incorporated in the oxide. After 900° C oxidations, substantial AsSi crystallites remain at the Si/SiO2 interface. They are still observed up to the larg-est oxide thickness grown (2.3 µm). The AsSi phase and the distribution of the im-planted arsenic were analyzed by TEM, SIMS and XRF measurements.

Buffer layers on metal alloy substrates for superconducting tapes

DOEpatents

Jia, Quanxi; Foltyn, Stephen R.; Arendt, Paul N.; Groves, James R.

2004-06-29

An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer, and a layer of a SrRuO.sub.3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO.sub.3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO.sub.3 buffer material in such an article, J.sub.c 's of up to 1.3.times.10.sup.6 A/cm.sup.2 have been demonstrated with projected IC's of over 200 Amperes across a sample 1 cm wide.

The interaction of small metal particles with refractory oxide supports

NASA Technical Reports Server (NTRS)

Park, C.; Heinemann, K.

1985-01-01

Islands and continuous layers of Pd were grown in UHV on Mo and MoO subtrates. As-deposited Pd islands and layers exhibited bulk Pd adsorption properties for CO when the Pd had been deposited at RT and at thicknesses exceeding 3 ML. However, CO adsorption was drastically reduced upon annealing. This deactivation was interpreted in terms of substrate/support interaction involving the diffusion of substrate species toward the Pd surface, using AES, TPD, and work function measurement techniques. A study of the growth and annealing behavior of Pd on Mo(110) was made for thicknesses up to 12 monolayers and substrate temperatures up to 1300K, using AES, XPS, LEED, and work function measurements. At low tempertures Pd formed a monolayer without alloying. In thick layers (12 ML) annealed about 700 K, Mo diffusion into the Pd layer and alloying were noted. Such layers remained continuous up to 1100 K. Thinner Pd layers were less stable and started coalescing upon annealing to as little as 550 K. Significant changes in Pd Auger peak shape, as well as shifts of Pd core levels, were observed during layer growth and annealing.

Method of making an electrode

DOEpatents

Isenberg, Arnold O.

1986-01-01

Disclosed is a method of coating an electrode on a solid oxygen conductive oxide layer. A coating of particles of an electronic conductor is formed on one surface of the oxide layer and a source of oxygen is applied to the opposite surface of the oxide layer. A metal halide vapor is applied over the electronic conductor and the oxide layer is heated to a temperature sufficient to induce oxygen to diffuse through the oxide layer and react with the metal halide vapor. This results in the growing of a metal oxide coating on the particles of electronic conductor, thereby binding them to the oxide layer.

Highly Strong and Elastic Graphene Fibres Prepared from Universal Graphene Oxide Precursors

PubMed Central

Huang, Guoji; Hou, Chengyi; Shao, Yuanlong; Wang, Hongzhi; Zhang, Qinghong; Li, Yaogang; Zhu, Meifang

2014-01-01

Graphene fibres are continuously prepared from universal graphene oxide precursors by a novel hydrogel-assisted spinning method. With assistance of a rolling process, meters of ribbon-like GFs, or GRs with improved conductivity, tensile strength, and a long-range ordered compact layer structure are successfully obtained. Furthermore, we refined our spinning process to obtained elastic GRs with a mixing microstructure and exceptional elasticity, which may provide a platform for electronic skins and wearable electronics, sensors, and energy devices. PMID:24576869

Structural Characterization of Biogenic Manganese Oxides Produced in Sea Water

NASA Astrophysics Data System (ADS)

Webb, S. M.; Bargar, J. R.; Tebo, B. M.

2003-12-01

Manganese oxides have been coined as the "scavengers of the sea" and play important roles in both marine and freshwater systems. Natural manganese oxide nanoparticles and grain coatings are ubiquitous in the environment and profoundly impact the quality of sediments via their ability to degrade and sequester contaminants. These oxides are believed to form dominantly via oxidation of Mn(II) by marine and freshwater bacteria and have extremely high sorptive capacities for heavy metals. We have used XANES, EXAFS, and synchrotron (SR)-XRD techniques to study biogenic manganese oxides produced by spores of the marine Bacillus sp., strain SG-1 in seawater as a function of reaction time under fully in-situ conditions. The primary biogenic solid-phase Mn oxide product is a hexagonal layered phyollomanganate with an oxidation state similar to that in delta-MnO2. XRD data show the biooxides to have a phyllomanganate 10 basal plane spacing, suggesting the interlayer is hydrated and contains calcium. As the experiment continues, the initial biooxide changes to show triclinic symmetry. Fits to these EXAFS spectra suggest the octahedral layers have low Mn octahedral site vacancies in the lattice and the latyers bend to accommodate Jahn-Teller distortions creating the change in symmetry. The oxides observed in this study as models of Mn(II) bio-oxidation may be representative of the most abundant manganese oxide phase suspended in the oxic and sub-oxic zones of the oceanic water column.

Large-area, continuous and high electrical performances of bilayer to few layers MoS2 fabricated by RF sputtering via post-deposition annealing method

PubMed Central

Hussain, Sajjad; Singh, Jai; Vikraman, Dhanasekaran; Singh, Arun Kumar; Iqbal, Muhammad Zahir; Khan, Muhammad Farooq; Kumar, Pushpendra; Choi, Dong-Chul; Song, Wooseok; An, Ki-Seok; Eom, Jonghwa; Lee, Wan-Gyu; Jung, Jongwan

2016-01-01

We report a simple and mass-scalable approach for thin MoS2 films via RF sputtering combined with the post-deposition annealing process. We have prepared as-sputtered film using a MoS2 target in the sputtering system. The as-sputtered film was subjected to post-deposition annealing to improve crystalline quality at 700 °C in a sulfur and argon environment. The analysis confirmed the growth of continuous bilayer to few-layer MoS2 film. The mobility value of ~29 cm2/Vs and current on/off ratio on the order of ~104 were obtained for bilayer MoS2. The mobility increased up to ~173–181 cm2/Vs, respectively, for few-layer MoS2. The mobility of our bilayer MoS2 FETs is larger than any previously reported values of single to bilayer MoS2 grown on SiO2/Si substrate with a SiO2 gate oxide. Moreover, our few-layer MoS2 FETs exhibited the highest mobility value ever reported for any MoS2 FETs with a SiO2 gate oxide. It is presumed that the high mobility behavior of our film could be attributed to low charged impurities of our film and dielectric screening effect by an interfacial MoOxSiy layer. The combined preparation route of RF sputtering and post-deposition annealing process opens up the novel possibility of mass and batch production of MoS2 film. PMID:27492282

Thermoelectric material including conformal oxide layers and method of making the same using atomic layer deposition

DOEpatents

Cho, Jung Young; Ahn, Dongjoon; Salvador, James R.; Meisner, Gregory P.

2016-06-07

A thermoelectric material includes a substrate particle and a plurality of conformal oxide layers formed on the substrate particle. The plurality of conformal oxide layers has a total oxide layer thickness ranging from about 2 nm to about 20 nm. The thermoelectric material excludes oxide nanoparticles. A method of making the thermoelectric material is also disclosed herein.

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

PubMed Central

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J.; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

2015-01-01

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor–inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance. PMID:26080437

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells

DOE PAGES

Zhou, Nanjia; Kim, Myung -Gil; Loser, Stephen; ...

2015-06-15

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor– inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactivemore » materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Lastly, continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.« less

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

PubMed

Zhou, Nanjia; Kim, Myung-Gil; Loser, Stephen; Smith, Jeremy; Yoshida, Hiroyuki; Guo, Xugang; Song, Charles; Jin, Hosub; Chen, Zhihua; Yoon, Seok Min; Freeman, Arthur J; Chang, Robert P H; Facchetti, Antonio; Marks, Tobin J

2015-06-30

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

Improve oxidation resistance at high temperature by nanocrystalline surface layer

NASA Astrophysics Data System (ADS)

Xia, Z. X.; Zhang, C.; Huang, X. F.; Liu, W. B.; Yang, Z. G.

2015-08-01

An interesting change of scale sequence occurred during oxidation of nanocrystalline surface layer by means of a surface mechanical attrition treatment. The three-layer oxide structure from the surface towards the matrix is Fe3O4, spinel FeCr2O4 and corundum (Fe,Cr)2O3, which is different from the typical two-layer scale consisted of an Fe3O4 outer layer and an FeCr2O4 inner layer in conventional P91 steel. The diffusivity of Cr, Fe and O is enhanced concurrently in the nanocrystalline surface layer, which causes the fast oxidation in the initial oxidation stage. The formation of (Fe,Cr)2O3 inner layer would inhabit fast diffusion of alloy elements in the nanocrystalline surface layer of P91 steel in the later oxidation stage, and it causes a decrease in the parabolic oxidation rate compared with conventional specimens. This study provides a novel approach to improve the oxidation resistance of heat resistant steel without changing its Cr content.

Method for fabricating solar cells having integrated collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1979-01-01

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Dewetting behavior of polystyrene film filled with (C6H5C2H4NH3)2PbI4

NASA Astrophysics Data System (ADS)

Xue, Longjian; Cheng, Ziyong; Fu, Jun; Han, Yanchun

2008-08-01

The dewetting behavior of thin (about 30 nm) polystyrene (PS) films filled with different amount of (C6H5C2H4NH3)2PbI4 (PhE-PbI4) on the silicon substrate with a native oxide layer was investigated. For different additive concentrations, PhE-PbI4 showed different spatial distributions in the PS films, which had a strong influence on the film wettability, dewetting dynamics, and mechanism. With 0.5 wt % additive, PhE-PbI4 formed a noncontinuous diffusion layer, which caused a continuous hole nucleation in the film. With about 1 wt % additive, a continuous gradient distribution layer of PhE-PbI4 formed in the film, which inhibited the dewetting. When the concentration is higher (2 wt %), large PhE-PbI4 aggregates, in addition to the PhE-PbI4 continuous layer, formed in the film. These large aggregates (larger than radius of gyration of PS) migrated to the interface, resulting in the hole nucleation and eventually the complete dewetting of the film.

A highly active and stable IrO x/SrIrO 3 catalyst for the oxygen evolution reaction

DOE PAGES

Seitz, Linsey C.; Dickens, Colin F.; Nishio, Kazunori; ...

2016-09-02

Oxygen electrochemistry plays a key role in renewable energy technologies such as fuel cells and electrolyzers, but the slow kinetics of the oxygen evolution reaction (OER) limit the performance and commercialization of such devices. Here we report an iridium oxide/strontium iridium oxide (IrO x/SrIrO 3) catalyst formed during electrochemical testing by strontium leaching from surface layers of thin films of SrIrO 3. This catalyst has demonstrated specific activity at 10 milliamps per square centimeter of oxide catalyst (OER current normalized to catalyst surface area), with only 270 to 290 millivolts of overpotential for 30 hours of continuous testing in acidicmore » electrolyte. Here, density functional theory calculations suggest the formation of highly active surface layers during strontium leaching with IrO 3 or anatase IrO 2 motifs. The IrO x/SrIrO 3 catalyst outperforms known IrO x and ruthenium oxide (RuO x) systems, the only other OER catalysts that have reasonable activity in acidic electrolyte.« less

A highly active and stable IrOx/SrIrO3 catalyst for the oxygen evolution reaction.

PubMed

Seitz, Linsey C; Dickens, Colin F; Nishio, Kazunori; Hikita, Yasuyuki; Montoya, Joseph; Doyle, Andrew; Kirk, Charlotte; Vojvodic, Aleksandra; Hwang, Harold Y; Norskov, Jens K; Jaramillo, Thomas F

2016-09-02

Oxygen electrochemistry plays a key role in renewable energy technologies such as fuel cells and electrolyzers, but the slow kinetics of the oxygen evolution reaction (OER) limit the performance and commercialization of such devices. Here we report an iridium oxide/strontium iridium oxide (IrO x /SrIrO 3 ) catalyst formed during electrochemical testing by strontium leaching from surface layers of thin films of SrIrO 3 This catalyst has demonstrated specific activity at 10 milliamps per square centimeter of oxide catalyst (OER current normalized to catalyst surface area), with only 270 to 290 millivolts of overpotential for 30 hours of continuous testing in acidic electrolyte. Density functional theory calculations suggest the formation of highly active surface layers during strontium leaching with IrO 3 or anatase IrO 2 motifs. The IrO x /SrIrO 3 catalyst outperforms known IrO x and ruthenium oxide (RuO x ) systems, the only other OER catalysts that have reasonable activity in acidic electrolyte. Copyright © 2016, American Association for the Advancement of Science.

Potential methane production and oxidation in soil reclamation covers of an oil sands mining site in Alberta, Canada

NASA Astrophysics Data System (ADS)

Pum, Lisa; Reichenauer, Thomas; Germida, Jim

2015-04-01

Anthropogenic activities create a number of significant greenhouse gases and thus potentially contribute to global warming. Methane production is significant in some agricultural production systems and from wetlands. In soil, methane can be oxidised by methanotrophic bacteria. However, little is known about methane production and oxidation in oil sand reclamation covers. The purpose of this study was to investigate methane production and oxidation potential of tailing sands and six different reclamation layers of oil sands mining sites in Alberta, Canada. Methane production and oxidation potential were investigated in laboratory scale microcosms through continuous headspace analysis using gas chromatography. Samples from a reclamation layer were collected at the Canadian Natural Resources Limited (CNRL) reclamation site at depths of 0-10 cm, 10-20 cm and 20-40 cm in October 2014. In addition, tailing sands provided by Suncor Energy Inc. and soil from a CNRL wetland were studied for methane production. Samples were dried, crushed and sieved to 4 mm, packed into serum bottle microcosms and monitored for eight weeks. Methane production potential was assessed by providing an anoxic environment and by adjusting the samples to a moisture holding capacity of 100 %. Methane oxidation potential was examined by an initial application of 2 vol % methane to the microcosms and by adjusting the samples to a moisture holding capacity of 50 %. Microcosm headspace gas was analysed for methane, carbon dioxide, nitrous oxide and oxygen. All experiments were carried out in triplicates, including controls. SF6 and Helium were used as internal standards to detect potential leaks. Our results show differences for methane production potential between the soil depths, tailing sands and wetlands. Moreover, there were differences in the methane oxidation potential of substrate from the three depths investigated and between the reclamation layers. In conclusion, the present study shows that reclamation layers for oil sands mining sites in Alberta, Canada have the potential to oxidize on-site produced methane emissions to the less harmful greenhouse gas carbon dioxide. Such oxidation might mitigate impacts of methane production from these sites.

Method of adhesion between an oxide layer and a metal layer

DOEpatents

Jennison, Dwight R.; Bogicevic, Alexander; Kelber, Jeffry A.; Chambers, Scott A.

2004-09-14

A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

NASA Astrophysics Data System (ADS)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Effect of thin oxide layers incorporated in spin valve structures

NASA Astrophysics Data System (ADS)

Gillies, M. F.; Kuiper, A. E. T.; Leibbrandt, G. W. R.

2001-06-01

The enhancement of the magnetoresistance effect, induced by incorporating nano-oxide layers (NOLs) in a bottom-type spin valve, was studied for various preparation conditions. The effect of a NOL in the Co90Fe10 pinned layer was found to depend critically on the oxygen pressure applied to form the thin oxide film. Pressures over 10-3 Torr O2 yield oxides thicker than about 0.7 nm, which apparently deteriorate the biasing field which exists over the oxide. The magnetoresistance values can further be raised by forming a specular reflecting oxide on top of the sense layer. Promising results were obtained with an Al2O3 capping layer formed in a solid-state oxidation reaction that occurs spontaneously when a thin Al layer is deposited on the oxidized surface of the Co90Fe10 sense layer.

Characterization of corrosion resistant on NiCoCr coating layer exposed to 5%NaCl

NASA Astrophysics Data System (ADS)

Sugiarti, E.; Sundawa, R.; Desiati, R. D.; Zaini, K. A.

2018-03-01

Highly corrosion resistant of carbon steel coated NiCoCr was applied in corrosive of marine environtment. Carbon steel coated NiCoCr was prepared by a two step technique of NiCo electro-deposition and Cr pack cementation. The samples were exposed to 5 wt.% NaCl for 48 and 168 hours. The microstructure and corrosion product were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and transmission electron microscopy (TEM). The corrosion resistance of carbon steel coated NiCoCr was found to be better than that of carbon steel substrate without coating. The results showed the microstructure of 48 h corroded sample has duplex layer composed of inner α-(Ni,Co), α-Cr and outer Cr2O3, while a quite thin and continues protective oxide of Cr2O3 was observed in outer layer of 168 h corroded sample. The formation of oxide scale rich in Cr2O3 has contributed for the better corrosion resistance of carbon steel coated NiCoCr, whereas the formation of non protective oxide of iron might caused low corrosion resistance of carbon steel substrate.

Structure and function of natural sulphide-oxidizing microbial mats under dynamic input of light and chemical energy

PubMed Central

Klatt, Judith M; Meyer, Steffi; Häusler, Stefan; Macalady, Jennifer L; de Beer, Dirk; Polerecky, Lubos

2016-01-01

We studied the interaction between phototrophic and chemolithoautotrophic sulphide-oxidizing microorganisms in natural microbial mats forming in sulphidic streams. The structure of these mats varied between two end-members: one characterized by a layer dominated by large sulphur-oxidizing bacteria (SOB; mostly Beggiatoa-like) on top of a cyanobacterial layer (B/C mats) and the other with an inverted structure (C/B mats). C/B mats formed where the availability of oxygen from the water column was limited (<5 μm). Aerobic chemolithotrophic activity of the SOB depended entirely on oxygen produced locally by cyanobacteria during high light conditions. In contrast, B/C mats formed at locations where oxygen in the water column was comparatively abundant (>45 μM) and continuously present. Here SOB were independent of the photosynthetic activity of cyanobacteria and outcompeted the cyanobacteria in the uppermost layer of the mat where energy sources for both functional groups were concentrated. Outcompetition of photosynthetic microbes in the presence of light was facilitated by the decoupling of aerobic chemolithotrophy and oxygenic phototrophy. Remarkably, the B/C mats conserved much less energy than the C/B mats, although similar amounts of light and chemical energy were available. Thus ecosystems do not necessarily develop towards optimal energy usage. Our data suggest that, when two independent sources of energy are available, the structure and activity of microbial communities is primarily determined by the continuous rather than the intermittent energy source, even if the time-integrated energy flux of the intermittent energy source is greater. PMID:26405833

Biquadratic coupling through nano-oxide layers in pinned layers of IrMn-based spin valves

NASA Astrophysics Data System (ADS)

Lai, Chih-Huang; Lu, K. H.

2003-05-01

We have investigated the coupling between top and bottom pinned layers through various nano-oxide layers (NOLs) in IrMn-based spin valves. The NOLs were formed by using oxygen-plasma oxidation or natural oxidation on 1 nm metallic layers. By inserting naturally oxidized Co-NOLs in the pinned layer, strong ferromagnetic coupling through NOLs and high specularity at the NOL interface were achieved. In contrast, when the plasma-oxidized Co-NOLs were inserted, ferromagnetic coupling through NOLs disappeared, plausibly due to the formation of nonferromagnetic oxides, which led to a low magnetoresistance (MR). Insertion of naturally oxidized Ni80Fe20-NOLs showed the same results as that of naturally oxidized Co-NOLs. On the other hand, biquadratic coupling between top and bottom pinned-Co90Fe10 layers was observed by inserting plasma-oxidized Ni80Fe20-NOLs. The highest MR was obtained when the field was applied along the direction perpendicular to the field-annealing direction. Similar biquadratic coupling was also found with naturally oxidized or plasma-oxidized Fe-NOLs. We suggest that the biquadratic coupling between pinned Co90Fe10 layers through NOLs results from the coupling between Fe (or Co90Fe10) and Fe+3 oxides

CMUT Fabrication Based On A Thick Buried Oxide Layer.

PubMed

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O; Khuri-Yakub, Butrus T

2010-10-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required - in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate.

CMUT Fabrication Based On A Thick Buried Oxide Layer

PubMed Central

Kupnik, Mario; Vaithilingam, Srikant; Torashima, Kazutoshi; Wygant, Ira O.; Khuri-Yakub, Butrus T.

2010-01-01

We introduce a versatile fabrication process for direct wafer-bonded CMUTs. The objective is a flexible fabrication platform for single element transducers, 1D and 2D arrays, and reconfigurable arrays. The main process features are: A low number of litho masks (five for a fully populated 2D array); a simple fabrication sequence on standard MEMS tools without complicated wafer handling (carrier wafers); an improved device reliability; a wide design space in terms of operation frequency and geometric parameters (cell diameter, gap height, effective insulation layer thickness); and a continuous front face of the transducer (CMUT plate) that is connected to ground (shielding for good SNR and human safety in medical applications). All of this is achieved by connecting the hot electrodes individually through a thick buried oxide layer, i.e. from the handle layer of an SOI substrate to silicon electrodes located in each CMUT cell built in the device layer. Vertical insulation trenches are used to isolate these silicon electrodes from the rest of the substrate. Thus, the high electric field is only present where required – in the evacuated gap region of the device and not in the insulation layer of the post region. Array elements (1D and 2D) are simply defined be etching insulation trenches into the handle wafer of the SOI substrate. PMID:22685377

Characterization of crystal structure features of a SIMOX substrate

NASA Astrophysics Data System (ADS)

Eidelman, K. B.; Shcherbachev, K. D.; Tabachkova, N. Yu.; Podgornii, D. A.; Mordkovich, V. N.

2015-12-01

The SIMOX commercial sample (Ibis corp.) was investigated by a high-resolution X-ray diffraction (HRXRD), a high-resolution transmission electron microscopy (HRTEM) and an Auger electron spectroscopy (AES) to determine its actual parameters (the thickness of the top Si and a continuous buried oxide layer (BOX), the crystalline quality of the top Si layer). Under used implantation conditions, the thickness of the top Si and BOX layers was 200 nm and 400 nm correspondingly. XRD intensity distribution near Si(0 0 4) reciprocal lattice point was investigated. According to the oscillation period of the diffraction reflection curve defined thickness of the overtop silicon layer (220 ± 2) nm. HRTEM determined the thickness of the oxide layer (360 nm) and revealed the presence of Si islands with a thickness of 30-40 nm and a length from 30 to 100 nm in the BOX layer nearby "BOX-Si substrate" interface. The Si islands are faceted by (1 1 1) and (0 0 1) faces. No defects were revealed in these islands. The signal from Si, which corresponds to the particles in an amorphous BOX matrix, was revealed by AES in the depth profiles. Amount of Si single crystal phase at the depth, where the particles are deposited, is about 10-20%.

Extraordinary Corrosion Protection from Polymer-Clay Nanobrick Wall Thin Films.

PubMed

Schindelholz, Eric J; Spoerke, Erik D; Nguyen, Hai-Duy; Grunlan, Jaime C; Qin, Shuang; Bufford, Daniel C

2018-06-20

Metals across all industries demand anticorrosion surface treatments and drive a continual need for high-performing and low-cost coatings. Here we demonstrate polymer-clay nanocomposite thin films as a new class of transparent conformal barrier coatings for protection in corrosive atmospheres. Films assembled via layer-by-layer deposition, as thin as 90 nm, are shown to reduce copper corrosion rates by >1000× in an aggressive H 2 S atmosphere. These multilayer nanobrick wall coatings hold promise as high-performing anticorrosion treatment alternatives to costlier, more toxic, and less scalable thin films, such as graphene, hexavalent chromium, or atomic-layer-deposited metal oxides.

Graphite to Graphene via Graphene Oxide: An Overview on Synthesis, Properties, and Applications

NASA Astrophysics Data System (ADS)

Hansora, D. P.; Shimpi, N. G.; Mishra, S.

2015-12-01

This work represents a state-of-the-art technique developed for the preparation of graphene from graphite-metal electrodes by the arc-discharge method carried out in a continuous flow of water. Because of continuous arcing of graphite-metal electrodes, the graphene sheets were observed in water with uniformity and little damage. These nanosheets were subjected to various purification steps such as acid treatment, oxidation, water washing, centrifugation, and drying. The pure graphene sheets were analyzed using Raman spectrophotometry, x-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), and tunneling electron microscopy (TEM). Peaks of Raman spectra were recorded at (1300-1400 cm-1) and (1500-1600 cm-1) for weak D-band and strong G-band, respectively. The XRD pattern showed 85.6% crystallinity of pure graphite, whereas pure graphene was 66.4% crystalline. TEM and FE-SEM micrographs revealed that graphene sheets were overlapped to each other and layer-by-layer formation was also observed. Beside this research work, we also reviewed recent developments of graphene and related nanomaterials along with their preparations, properties, functionalizations, and potential applications.

Thickness dependence of the MoO3 blocking layers on ZnO nanorod-inverted organic photovoltaic devices

PubMed Central

Wang, Mingjun; Li, Yuan; Huang, Huihui; Peterson, Eric D.; Nie, Wanyi; Zhou, Wei; Zeng, Wei; Huang, Wenxiao; Fang, Guojia; Sun, Nanhai; Zhao, Xingzhong; Carroll, David L.

2011-01-01

Organic solar cells based on vertically aligned zinc oxide nanorod arrays (ZNR) in an inverted structure of indium tin oxide (ITO)∕ZNR∕poly(3-hexylthiophene): (6,6)-phenyl C61 butyric acid methyl ester(P3HT:PCBM)∕MoO3∕aluminum(Al) were studied. We found that the optimum MoO3 layer thickness condition of 20 nm, the MoO3 can effectively decrease the probability of bimolecular recombination either at the Al interface or within the active layer itself. For this optimum condition we get a power conversion efficiency of 2.15%, a short-circuit current density of 9.02 mA∕cm2, an open-circuit voltage of 0.55V, and a fill factor of 0.44 under 100 mW∕cm2 irradiation. Our investigations also show that the highly crystallized ZNR can create short and continuous pathways for electron transport and increase the contact area between the ZNR and the organic materials. PMID:21464889

Thermal treatment effects on charge storage performance of graphene-based materials for supercapacitors.

PubMed

Zhang, Hongxin; Bhat, Vinay V; Gallego, Nidia C; Contescu, Cristian I

2012-06-27

Graphene materials were synthesized by reduction of exfoliated graphite oxide and then thermally treated in nitrogen to improve the surface area and their electrochemical performance as electrical double-layer capacitor electrodes. The structural and surface properties of the prepared reduced graphite oxide (RGO) were investigated using atomic force microscopy, scanning electron microscopy, Raman spectra, X-ray diffraction pattern analysis, and nitrogen adsorption/desorption studies. RGO forms a continuous network of crumpled sheets, which consist of large amounts of few-layer and single-layer graphenes. Electrochemical studies were conducted by cyclic voltammetry, impedance spectroscopy, and galvanostatic charge-discharge measurements. The modified RGO materials showed enhanced electrochemical performance, with maximum specific capacitance of 96 F/g, energy density of 12.8 Wh/kg, and power density of 160 kW/kg. These results demonstrate that thermal treatment of RGO at selected conditions is a convenient and efficient method for improving its specific capacitance, energy, and power density.

An electrochemical approach to monitor pH change in agar media during plant tissue culture.

PubMed

Wang, Min; Ha, Yang

2007-05-15

In this work, metal oxide microelectrodes were developed to monitor pH change in agar media during plant tissue culture. An antimony wire was produced by a new approach "capillary melt method". The surface of the obtained antimony wire was oxidized in a potassium nitrate melt to fabricate an antimony oxide film for pH sensing. Characterization results show that the oxide layer grown on the wire surface consists of Sb(2)O(3) crystal phase. The sensing response, open-circuit potential, of the electrode has a good linear relationship (R(2)=1.00) with pH value of the test solution. Adding organic compounds into the test media would not affect the linear relationship, although the slope of the lines varied with different ingredients added. The antimony oxide electrodes were employed to continuously monitor pH change of agar culture media during a 2-week plant tissue culture of Dendrobium candidum. The antimony oxide electrode fabricated this way has the advantages of low cost, easy fabrication, fast response, and almost no contamination introduced into the system. It would be suitable for in situ and continuous pH measurement in many bio applications.

Method of removing oxides of sulfur and oxides of nitrogen from exhaust gases

DOEpatents

Walker, Richard J.

1986-01-01

A continuous method is presented for removing both oxides of sulfur and oxides of nitrogen from combustion or exhaust gases with the regeneration of the absorbent. Exhaust gas is cleaned of particulates and HCl by a water scrub prior to contact with a liquid absorbent that includes an aqueous solution of bisulfite and sulfite ions along with a metal chelate, such as, an iron or zinc aminopolycarboxylic acid. Following contact with the combustion gases the spent absorbent is subjected to electrodialysis to transfer bisulfite ions into a sulfuric acid solution while splitting water with hydroxide and hydrogen ion migration to equalize electrical charge. The electrodialysis stack includes alternate layers of anion selective and bipolar membranes. Oxides of nitrogen are removed from the liquid absorbent by air stripping at an elevated temperature and the regenerated liquid absorbent is returned to contact with exhaust gases for removal of sulfur oxides and nitrogen oxides.

Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning.

PubMed

Bao, Zhong-Min; Xu, Rui-Peng; Li, Chi; Xie, Zhong-Zhi; Zhao, Xin-Dong; Zhang, Yi-Bo; Li, Yan-Qing; Tang, Jian-Xin

2016-08-31

Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky-Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.

Nano-scale zirconia and hafnia dielectrics grown by atomic layer deposition: Crystallinity, interface structures and electrical properties

NASA Astrophysics Data System (ADS)

Kim, Hyoungsub

With the continued scaling of transistors, leakage current densities across the SiO2 gate dielectric have increased enormously through direct tunneling. Presently, metal oxides having higher dielectric constants than SiO2 are being investigated to reduce the leakage current by increasing the physical thickness of the dielectric. Many possible techniques exist for depositing high-kappa gate dielectrics. Atomic layer deposition (ALD) has drawn attention as a method for preparing ultrathin metal oxide layers with excellent electrical characteristics and near-perfect film conformality due to the layer-by-layer nature of the deposition mechanism. For this research, an ALD system using ZrCl4/HfCl4 and H2O was built and optimized. The microstructural and electrical properties of ALD-ZrO2 and HfO2 grown on SiO2/Si substrates were investigated and compared using various characterization tools. In particular, the crystallization kinetics of amorphous ALD-HfO2 films were studied using in-situ annealing experiments in a TEM. The effect of crystallization on the electrical properties of ALD-HfO 2 was also investigated using various in-situ and ex-situ post-deposition anneals. Our results revealed that crystallization had little effect on the magnitude of the gate leakage current or on the conduction mechanisms. Building upon the results for each metal oxide separately, more advanced investigations were made. Several nanolaminate structures using ZrO2 and HfO2 with different sequences and layer thicknesses were characterized. The effects of the starting microstructure on the microstructural evolution of nanolaminate stacks were studied. Additionally, a promising new approach for engineering the thickness of the SiO2-based interface layer between the metal oxide and silicon substrate after deposition of the metal oxide layer was suggested. Through experimental measurements and thermodynamic analysis, it is shown that a Ti overlayer, which exhibits a high oxygen solubility, can effectively getter oxygen from the interface layer, thus decomposing SiO2 and reducing the interface layer thickness in a controllable fashion. As one of several possible applications, ALD-ZrO2 and HfO 2 gate dielectric films were deposited on Ge (001) substrates with different surface passivations. After extensive characterization using various microstructural, electrical, and chemical analyses, excellent MOS electrical properties of high-kappa gate dielectrics on Ge were successfully demonstrated with optimized surface nitridation of the Ge substrates.

In-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Jing; Yan, Xi; Han, Furong; Zhang, Jine; Liu, Dan; Shen, Baogen; Sun, Jirong

2018-05-01

The interface engineering of the complex oxides with strongly coupled degrees of freedom opens a wide space for the exploration of novel effects. La0.67Sr0.33MnO3 is one of the most typical complex oxides used for atomic level material engineering. Herein we reported an in-plane reversal of the magnetic anisotropy in (110)-oriented LaCoO3/La0.67Sr0.33MnO3 (LCO/LSMO) bilayers grown on (110)-oriented LaAlO3 substrates. Fixing the LSMO layer thickness to 8 nm and varying the LCO layer from 0 to 8 nm, totally six bilayers were fabricated. Without the LCO layer, the LSMO film exhibits an easy axis along the [1-10] direction. However, when the thickness of the LCO layer exceeds 1 nm, a signature of spin-reorientation appears; the easy axis turns from the [1-10] to the [001] direction below 225 K. This tendency is continuously enhanced by increasing the LCO. We reveal that lattice strains are different along these two directions. The magnetic anisotropy is not only controlled by lattice strain but also by structural distortion at interface. This work shows the great potential of the interface engineering with differently structured oxides for the exploration of novel functional materials.

Binary metal oxide nanoparticle incorporated composite multilayer thin films for sono-photocatalytic degradation of organic pollutants

NASA Astrophysics Data System (ADS)

Gokul, Paramasivam; Vinoth, Ramalingam; Neppolian, Bernaurdshaw; Anandhakumar, Sundaramurthy

2017-10-01

We report reduced graphene oxide (rGO) supported binary metal oxide (CuO-TiO2/rGO) nanoparticle (NP) incorporated multilayer thin films based on Layer-by-Layer (LbL) assembly for enhanced sono-photocatalytic degradation of methyl orange under exposure to UV radiation. Multilayer thin films were fabricated on glass and quartz slides, and investigated using scanning electron microscopy and UV-vis spectroscopy. The loading of catalyst NPs on the film resulted in the change of morphology of the film from smooth to rough with uniformly distributed NPs on the surface. The growth of the control and NP incorporated films followed a linear regime as a function of number of layers. The%degradation of methyl orange as a function of time was investigated by UV-vis spectroscopy and total organic carbon (TOC) measurements. Complete degradation of methyl orange was achieved within 13 h. The amount of NP loading in the film significantly influenced the%degradation of methyl orange. Catalyst reusability studies revealed that the catalyst thin films could be repeatedly used for up to five times without any change in photocatalytic activity of the films. The findings of the present study support that the binary metal oxide catalyst films reported here are very useful for continuous systems, and thus, making it an option for scale up.

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

NASA Astrophysics Data System (ADS)

Chollet, Mélanie; Valance, Stéphane; Abolhassani, Sousan; Stein, Gene; Grolimund, Daniel; Martin, Matthias; Bertsch, Johannes

2017-05-01

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO2 are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components.

Characterization of strain relaxation behavior in Si1- x Ge x epitaxial layers by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Park, Seran; Ko, Dae-Hong

2017-11-01

We fabricated fully strained Si0.77Ge0.23 epitaxial layers on Si substrates and investigated their strain relaxation behaviors under dry oxidation and the effect of oxidation temperatures and times. After the oxidation process, a Ge-rich layer was formed between the oxide and the remaining Si0.77Ge0.23 layer. Using reciprocal space mapping measurements, we confirmed that the strain of the Si0.77Ge0.23 layers was efficiently relaxed after oxidation, with a maximum relaxation value of 70% after oxidation at 850 °C for 120 min. The surface of Si0.77Ge0.23 layer after strain relaxation by dry oxidation was smoother than a thick Si0.77Ge0.23 layer, which achieved a similar strain relaxation value by increasing the film thickness. Additionally, N2 annealing was performed in order to compare its effect on the relaxation compared to dry oxidation and to identify relaxation mechanisms, other than the thermally driven ones, occurring during dry oxidation.

Durability of Environmental Barrier Coatings in a Water Vapor/Oxygen Environment

NASA Technical Reports Server (NTRS)

Holchin, John E.

2004-01-01

Silicon carbide (Sic) and silicon nitride (Si3N4) show potential for application in the hot sections of advanced jet engines. The oxidation behavior of these materials has been studied in great detail. In a pure oxygen environment, a silica (SiO2) layer forms on the surface and provides protection from further oxidation. Initial oxidation is rapid, but slows as silica layer grows; this is known as parabolic oxidation. When exposed to model fuel-lean combustion applications (standard in jet engines), wherein the partial pressure of water vapor is approximately 0.5 atm., these materials exhibit different characteristics. In such an environment, the primary oxidant to form silica is water vapor. At the same time, water vapor reacts with the surface oxide to form gaseous silicon hydroxide (Si(OH)4). The simultaneous formation of both silica and Si(OH)4 -the latter which is lost to the atmosphere- the material continues to recede. Recession rates for uncoated Sic and Si3N4 are unacceptably high, for use in jet engines, - on the order of 1mm/4000h. External coatings have been developed that protect Si-based materials from water vapor attack. One such coating consists of a Ba(0.75)Sr(0.25)Al2Si2O8 (BSAS) topcoat, a mullite/BSAS intermediate layer and a Si bond coat. The key function of the topcoat is to protect the Si-base material from water vapor; therefore it must be fairly stable in water vapor (recession rate of about 1mm/40,000h) and remain crack free. Although BSAS is much more resistant to water vapor attack than pure silica, it exhibits a linear weight loss in 50% H2O - 50% O2 at 1500 C. The objective of my research is to determine the oxidation behavior of a number of alternate hot-pressed monolithic top coat candidates. Potential coatings were exposed at 1500 C to a 50% H2O - 50% O2 gas mixture flowing at 4.4 cm/s . These included rare- earth silicates, barium-strontium aluminosilicates. When weight changes were measured with a continuously recording microbalance, linear weight loss was observed. BSAS materials have a fairly high volatility at this temperature, but rare-earth mono-silicate compounds were significantly more stable.

Inverted bulk-heterojunction organic solar cells with the transfer-printed anodes and low-temperature-processed ultrathin buffer layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Sakai, Shota; Fukuda, Katsutoshi

2018-03-01

We studied the effects of a hole buffer layer [molybdenum oxide (MoO3) and natural copper oxide layer] and a low-temperature-processed electron buffer layer on the performance of inverted bulk-heterojunction organic solar cells in a device consisting of indium-tin oxide (ITO)/poly(ethylene imine) (PEI)/titanium oxide nanosheet (TiO-NS)/poly(3-hexylthiopnehe) (P3HT):phenyl-C61-butyric acid methylester (PCBM)/oxide/anode (Ag or Cu). The insertion of ultrathin TiO-NS (˜1 nm) and oxide hole buffer layers improved the open circuit voltage V OC, fill factor, and rectification properties owing to the effective hole blocking and electron transport properties of ultrathin TiO-NS, and to the enhanced work function difference between TiO-NS and the oxide hole buffer layer. The insertion of the TiO-NS contributed to the reduction in the potential barrier at the ITO/PEI/TiO-NS/active layer interface for electrons, and the insertion of the oxide hole buffer layer contributed to the reduction in the potential barrier for holes. The marked increase in the capacitance under positive biasing in the capacitance-voltage characteristics revealed that the combination of TiO-NS and MoO3 buffer layers contributes to the selective transport of electrons and holes, and blocks counter carriers at the active layer/oxide interface. The natural oxide layer of the copper electrode also acts as a hole buffer layer owing to the increase in the work function of the Cu surface in the inverted cells. The performance of the cell with evaporated MoO3 and Cu layers that were transfer-printed to the active layer was almost comparable to that of the cell with MoO3 and Ag layers directly evaporated onto the active layer. We also demonstrated comparable device performance in the cell with all-printed MoO3 and low-temperature-processed silver nanoparticles as an anode.

Analysis of Zinc Oxide Thin Films Synthesized by Sol-Gel via Spin Coating

NASA Astrophysics Data System (ADS)

Wolgamott, Jon Carl

Transparent conductive oxides are gaining an increasingly important role in optoelectronic devices such as solar cells. Doped zinc oxide is a candidate as a low cost and nontoxic alternative to tin doped indium oxide. Lab results have shown that both n-type and p-type zinc oxide can be created on a small scale. This can allow zinc oxide to be used as either an electrode as well as a buffer layer to increase efficiency and protect the active layer in solar cells. Sol-gel synthesis is emerging as a low temperature, low cost, and resource efficient alternative to producing transparent conducting oxides such as zinc oxide. For sol-gel derived zinc oxide thin films to reach their potential, research in this topic must continue to optimize the known processing parameters and expand to new parameters to tighten control and create novel processing techniques that improve performance. The processing parameters of drying and annealing temperatures as well as cooling rate were analyzed to see their effect on the structure of the prepared zinc oxide thin films. There were also preliminary tests done to modify the sol-gel process to include silver as a dopant to produce a p-type thin film. The results from this work show that the pre- and post- heating temperatures as well as the cooling rate all play their own unique role in the crystallization of the film. Results from silver doping show that more work needs to be done to create a sol-gel derived p-type zinc oxide thin film.

Influence of substrate preparation on the shaping of the topography of the surface of nanoceramic oxide layers

NASA Astrophysics Data System (ADS)

Bara, Marek; Kubica, Marek

2014-02-01

The paper discusses the shaping mechanism and changes occurring in the structure and topography of the surface of nanoceramic oxide layers during their formation. The paper presents the influence of substrate preparation on the surface topography of oxide layers. The layers were produced via hard anodizing on the EN AW-5251 aluminum alloy. The layers obtained were subjected to microscope examinations, image and chemical composition analyses, and stereometric examinations. Heredity of substrate properties in the topography of the surface of nanoceramic oxide layers formed as a result of electrochemical oxidation has been shown.

Impedance of Barrier-Type Oxide Layer on Aluminum

NASA Astrophysics Data System (ADS)

Oh, Han-Jun; Kim, Jung-Gu; Jeong, Yong-Soo; Chi, Choong-Soo

2000-12-01

The impedance characteristics of barrier-type oxide layers on aluminum was studied using impedance spectroscopy. Since anodic films on Al have a variable stoichiometry with a gradual reduction of oxygen deficiency towards the oxide-electrolyte interface, the interpretation of impedance spectra for oxide layers is complex and the impedance of surface layers differs from those of ideal capacitors. This frequency response of the layer with conductance gradients cannot be described by a single resistance-capacitance (RC) element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

Liquid flow cells having graphene on nitride for microscopy

DOEpatents

Adiga, Vivekananda P.; Dunn, Gabriel; Zettl, Alexander K.; Alivisatos, A. Paul

2016-09-20

This disclosure provides systems, methods, and apparatus related to liquid flow cells for microscopy. In one aspect, a device includes a substrate having a first and a second oxide layer disposed on surfaces of the substrate. A first and a second nitride layer are disposed on the first and second oxide layers, respectively. A cavity is defined in the first oxide layer, the first nitride layer, and the substrate, with the cavity including a third nitride layer disposed on walls of the substrate and the second oxide layer that define the cavity. A channel is defined in the second oxide layer. An inlet port and an outlet port are defined in the second nitride layer and in fluid communication with the channel. A plurality of viewports is defined in the second nitride layer. A first graphene sheet is disposed on the second nitride layer covering the plurality of viewports.

Fabrication of contacts for silicon solar cells including printing burn through layers

DOEpatents

Ginley, David S; Kaydanova, Tatiana; Miedaner, Alexander; Curtis, Calvin J; Van Hest, Marinus Franciscus Antonius Maria

2014-06-24

A method for fabricating a contact (240) for a solar cell (200). The method includes providing a solar cell substrate (210) with a surface that is covered or includes an antireflective coating (220). For example, the substrate (210) may be positioned adjacent or proximate to an outlet of an inkjet printer (712) or other deposition device. The method continues with forming a burn through layer (230) on the coating (220) by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer (240) comprising silver over or on the burn through layer (230), and then annealing is performed to electrically connect the contact layer (240) to the surface of the solar cell substrate (210) through a portion of the burn through layer (230) and the coating (220).

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, V.K.

1990-08-21

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

DOEpatents

Sarin, Vinod K.

1990-01-01

An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

High Temperature Oxidation of Hot-Dip Aluminized T92 Steels

NASA Astrophysics Data System (ADS)

Abro, Muhammad Ali; Hahn, Junhee; Lee, Dong Bok

2018-03-01

The T92 steel plate was hot-dip aluminized, and oxidized in order to characterize the high-temperature oxidation behavior of hot-dip aluminized T92 steel. The coating consisted of Al-rich topcoat with scattered Al3Fe grains, Al3Fe-rich upper alloy layer with scattered (Al, Al5Fe2, AlFe)-grains, and Al5Fe2-rich lower alloy layer with scattered (Al5Fe2, AlFe)-grains. Oxidation at 800 °C for 20 h formed (α-Al2O3 scale)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer), while oxidation at 900 °C for 20 h formed (α-Al2O3 scale plus some Fe2O3)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer) from the surface. During oxidation, outward migration of all substrate elements, inward diffusion of oxygen, and back and forth diffusion of Al occurred according to concentration gradients. Also, diffusion transformed and broadened AlFe and AlFe3 layers dissolved with some oxygen and substrate alloying elements. Hot-dip aluminizing improved the high-temperature oxidation resistance of T92 steel through preferential oxidation of Al at the surface.

High Temperature Oxidation of Hot-Dip Aluminized T92 Steels

NASA Astrophysics Data System (ADS)

Abro, Muhammad Ali; Hahn, Junhee; Lee, Dong Bok

2018-05-01

The T92 steel plate was hot-dip aluminized, and oxidized in order to characterize the high-temperature oxidation behavior of hot-dip aluminized T92 steel. The coating consisted of Al-rich topcoat with scattered Al3Fe grains, Al3Fe-rich upper alloy layer with scattered (Al, Al5Fe2, AlFe)-grains, and Al5Fe2-rich lower alloy layer with scattered (Al5Fe2, AlFe)-grains. Oxidation at 800 °C for 20 h formed (α-Al2O3 scale)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer), while oxidation at 900 °C for 20 h formed (α-Al2O3 scale plus some Fe2O3)/(AlFe layer)/(AlFe3 layer)/(α-Fe(Al) layer) from the surface. During oxidation, outward migration of all substrate elements, inward diffusion of oxygen, and back and forth diffusion of Al occurred according to concentration gradients. Also, diffusion transformed and broadened AlFe and AlFe3 layers dissolved with some oxygen and substrate alloying elements. Hot-dip aluminizing improved the high-temperature oxidation resistance of T92 steel through preferential oxidation of Al at the surface.

Plasma Oxidation Of Silver And Zinc In Low-Emissivity Stacks

NASA Astrophysics Data System (ADS)

Ross, R. C.; Sherman, R.,; Bunger, R. A.; Nadel, S. J.

1987-11-01

The oxidation of silver and zinc films was studied by exposing metallic films to low-power 02 plasmas and analyzing the reacted films. This type of oxidation is an important phenomenon near the barrier layer in sputter-deposited metal-oxide/Ag/metal-oxide low-emissivity (low-e) coatings. Barrier layers generally are deposited on the Ag layer to prevent its degradation during subsequent 02 reactive sputtering. Both individual layers and complete stacks were studied. In addition, the thermal stability of plasma-oxidized Ag was examined. There are several important findings for the individual layers. Ag oxidizes rapidly in the plasma, forming Ag≍1.70 after complete reaction. Relative to the original Ag, the 9ide has -l.7 times greater thick-ness, >10 times higher electrical resistiv-ity (p), and increased surface roughness. Zn oxidizes slowly, at only -1% to 0.1% times the rate for Ag, and is thus more difficult to characterize. The results for individual layers are discussed as they relate to practical pro-perties of low-e stacks: the difficulty of obtaining complete barrier layer oxidation without partially degrading the Ag layer as well as the effects of heat treatment and aging.

Multifunctional Composites for Improved Polyimide Thermal Stability

NASA Technical Reports Server (NTRS)

Miller, Sandi G.

2007-01-01

The layered morphology of silicate clay provides an effective barrier to oxidative degradation of the matrix resin. However, as resin thermal stability continues to reach higher limits, development of an organic modification with comparable temperature capabilities becomes a challenge. Typically, phyllosilicates used in polymer nanocomposites are modified with an alkyl ammonium ion. Such organic modifiers are not suited for incorporation into high temperature polymers as they commonly degrade below 200oC. Therefore, the development of nanoparticle specifically suited for high temperature applications is necessary. Several nanoparticles were investigated in this study, including pre-exfoliated synthetic clay, an organically modified clay, and carbon nanofiber. Dispersion of the layered silicate increases the onset temperature of matrix degradation as well as slows oxidative degradation. The thermally stable carbon nanofibers are also observed to significantly increase the resin thermal stability.

Hydrogen blistering under extreme radiation conditions

NASA Astrophysics Data System (ADS)

Sznajder, Maciej; Geppert, Ulrich; Dudek, Miroslaw

2018-01-01

Metallic surfaces, exposed to a proton flux, start to degradate by molecular hydrogen blisters. These are created by recombination of protons with metal electrons. Continued irradiation progresses blistering, which is undesired for many technical applications. In this work, the effect of the proton flux magnitude onto the degradation of native metal oxide layers and its consequences for blister formation has been examined. To study this phenomenon, we performed proton irradiation experiments of aluminium surfaces. The proton kinetic energy was chosen so that all recombined hydrogen is trapped within the metal structure. As a result, we discovered that intense proton irradiation increases the permeability of aluminium oxide layers for hydrogen atoms, thereby counteracting blister formation. These findings may improve the understanding of the hydrogen blistering process, are valid for all metals kept under terrestrial ambient conditions, and important for the design of proton irradiation tests.

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

1994-01-01

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2013-10-22

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Aksay, Ilhan A; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2015-04-28

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Self assembled multi-layer nanocomposite of graphene and metal oxide materials

DOEpatents

Liu, Jun; Choi, Daiwon; Kou, Rong; Nie, Zimin; Wang, Donghai; Yang, Zhenguo

2014-09-16

Nanocomposite materials having at least two layers, each layer consisting of one metal oxide bonded to at least one graphene layer were developed. The nanocomposite materials will typically have many alternating layers of metal oxides and graphene layers, bonded in a sandwich type construction and will be incorporated into an electrochemical or energy storage device.

Planar ceramic membrane assembly and oxidation reactor system

DOEpatents

Carolan, Michael Francis; Dyer, legal representative, Kathryn Beverly; Wilson, Merrill Anderson; Ohm, Ted R.; Kneidel, Kurt E.; Peterson, David; Chen, Christopher M.; Rackers, Keith Gerard; Dyer, deceased, Paul Nigel

2007-10-09

Planar ceramic membrane assembly comprising a dense layer of mixed-conducting multi-component metal oxide material, wherein the dense layer has a first side and a second side, a porous layer of mixed-conducting multi-component metal oxide material in contact with the first side of the dense layer, and a ceramic channeled support layer in contact with the second side of the dense layer. The planar ceramic membrane assembly can be used in a ceramic wafer assembly comprising a planar ceramic channeled support layer having a first side and a second side; a first dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the first side of the ceramic channeled support layer; a first outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the first dense layer; a second dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the second side of the ceramic channeled layer; and a second outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the second dense layer.

Planar ceramic membrane assembly and oxidation reactor system

DOEpatents

Carolan, Michael Francis; Dyer, legal representative, Kathryn Beverly; Wilson, Merrill Anderson; Ohrn, Ted R.; Kneidel, Kurt E.; Peterson, David; Chen, Christopher M.; Rackers, Keith Gerard; Dyer, Paul Nigel

2009-04-07

Planar ceramic membrane assembly comprising a dense layer of mixed-conducting multi-component metal oxide material, wherein the dense layer has a first side and a second side, a porous layer of mixed-conducting multi-component metal oxide material in contact with the first side of the dense layer, and a ceramic channeled support layer in contact with the second side of the dense layer. The planar ceramic membrane assembly can be used in a ceramic wafer assembly comprising a planar ceramic channeled support layer having a first side and a second side; a first dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the first side of the ceramic channeled support layer; a first outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the first dense layer; a second dense layer of mixed-conducting multi-component metal oxide material having an inner side and an outer side, wherein the inner side is in contact with the second side of the ceramic channeled layer; and a second outer support layer comprising porous mixed-conducting multi-component metal oxide material and having an inner side and an outer side, wherein the inner side is in contact with the outer side of the second dense layer.

Raman spectroscopy analysis of air grown oxide scale developed on pure zirconium substrate

NASA Astrophysics Data System (ADS)

Kurpaska, L.; Favergeon, J.; Lahoche, L.; El-Marssi, M.; Grosseau Poussard, J.-L.; Moulin, G.; Roelandt, J.-M.

2015-11-01

Using Raman spectroscopy technique, external and internal parts of zirconia oxide films developed at 500 °C and 600 °C on pure zirconium substrate under air at normal atmospheric pressure have been examined. Comparison of Raman peak positions of tetragonal and monoclinic zirconia phases, recorded during the oxide growth at elevated temperature, and after cooling at room temperature have been presented. Subsequently, Raman peak positions (or shifts) were interpreted in relation with the stress evolution in the growing zirconia scale, especially closed to the metal/oxide interface, where the influence of compressive stress in the oxide is the biggest. Reported results, for the first time show the presence of a continuous layer of tetragonal zirconia phase developed in the proximity of pure zirconium substrate. Based on the Raman peak positions we prove that this tetragonal layer is stabilized by the high compressive stress and sub-stoichiometry level. Presence of the tetragonal phase located in the outer part of the scale have been confirmed, yet its Raman characteristics suggest a stress-free tetragonal phase, therefore different type of stabilization mechanism. Presented study suggest that its stabilization could be related to the lattice defects introduced by highstoichiometry of zirconia or presence of heterovalent cations.

Fabrication of Hierarchical Layer-by-Layer Assembled Diamond-based Core-Shell Nanocomposites as Highly Efficient Dye Absorbents for Wastewater Treatment

NASA Astrophysics Data System (ADS)

Zhao, Xinna; Ma, Kai; Jiao, Tifeng; Xing, Ruirui; Ma, Xilong; Hu, Jie; Huang, Hao; Zhang, Lexin; Yan, Xuehai

2017-03-01

The effective chemical modification and self-assembly of diamond-based hierarchical composite materials are of key importance for a broad range of diamond applications. Herein, we report the preparation of novel core-shell diamond-based nanocomposites for dye adsorption toward wastewater treatment through a layer-by-layer (LbL) assembled strategy. The synthesis of the reported composites began with the carboxyl functionalization of microdiamond by the chemical modification of diamond@graphene oxide composite through the oxidation of diamond@graphite. The carboxyl-terminated microdiamond was then alternatively immersed in the aqueous solution of amine-containing polyethylenimine and carboxyl-containing poly acrylic acid, which led to the formation of adsorption layer on diamond surface. Alternating (self-limiting) immersions in the solutions of the amine-containing and carboxyl-containing polymers were continued until the desired number of shell layers were formed around the microdiamond. The obtained core-shell nanocomposites were successfully synthesized and characterized by morphological and spectral techniques, demonstrating higher surface areas and mesoporous structures for good dye adsorption capacities than nonporous solid diamond particles. The LbL-assembled core-shell nanocomposites thus obtained demonstrated great adsorption capacity by using two model dyes as pollutants for wastewater treatment. Therefore, the present work on LbL-assembled diamond-based composites provides new alternatives for developing diamond hybrids as well as nanomaterials towards wastewater treatment applications.

Method for implementation of back-illuminated CMOS or CCD imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata (Inventor)

2008-01-01

A method for implementation of back-illuminated CMOS or CCD imagers. An oxide layer buried between silicon wafer and device silicon is provided. The oxide layer forms a passivation layer in the imaging structure. A device layer and interlayer dielectric are formed, and the silicon wafer is removed to expose the oxide layer.

Deposition and characterization of silicon thin-films by aluminum-induced crystallization

NASA Astrophysics Data System (ADS)

Ebil, Ozgenc

Polycrystalline silicon (poly-Si) as a thin-film solar cell material could have major advantages compared to non-silicon thin-film technologies. In theory, thin-film poly-Si may retain the performance and stability of c-Si while taking advantage of established manufacturing techniques. However, poly-Si films deposited onto foreign substrates at low temperatures typically have an average grain size of 10--50 nm. Such a grain structure presents a potential problem for device performance since it introduces an excessive number of grain boundaries which, if left unpassivated, lead to poor solar cell properties. Therefore, for optimum device performance, the grain size of the poly-Si film should be at least comparable to the thickness of the films. For this project, the objectives were the deposition of poly-Si thin-films with 2--5 mum grain size on glass substrates using in-situ and conventional aluminum-induced crystallization (AIC) and the development of a model for AIC process. In-situ AIC experiments were performed using Hot-Wire Chemical Vapor Deposition (HWCVD) both above and below the eutectic temperature (577°C) of Si-Al binary system. Conventional AIC experiments were performed using a-Si layers deposited on aluminum coated glass substrates by Electron-beam deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) and HWCVD. Continuous poly-Si films with an average grain size of 10 mum on glass substrates were achieved by both in-situ and conventional aluminum-induced crystallization of Si below eutectic temperature. The grain size was determined by three factors; the grain structure of Al layer, the nature of the interfacial oxide, and crystallization temperature. The interface oxide was found to be crucial for AIC process but not necessary for crystallization itself. The characterization of interfacial oxide layer formed on Al films revealed a bilayer structure containing Al2O3 and Al(OH)3 . The effective activation energy for AIC process was determined to be 0.9 eV and depended on the nature of the interfacial oxide layer. Poly-Si layers prepared by AIC technique can be used as seed layers for epitaxial growth of bulk Si layer or as back contacts in c-Si based solar cells.

Oxide film on metal substrate reduced to form metal-oxide-metal layer structure

NASA Technical Reports Server (NTRS)

Youngdahl, C. A.

1967-01-01

Electrically conductive layer of zirconium on a zirconium-oxide film residing on a zirconium substrate is formed by reducing the oxide in a sodium-calcium solution. The reduced metal remains on the oxide surface as an adherent layer and seems to form a barrier that inhibits further reaction.

Articles including thin film monolayers and multilayers

DOEpatents

Li, DeQuan; Swanson, Basil I.

1995-01-01

Articles of manufacture including: (a) a base substrate having an oxide surface layer, and a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, (b) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, and a metal species attached to the multidentate ligand, (c) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, and a multifunctional organic ligand attached to the metal species, and (d) a base substrate having an oxide surface layer, a multidentate ligand, capable of binding a metal ion, attached to the oxide surface layer of the base substrate, a metal species attached to the multidentate ligand, a multifunctional organic ligand attached to the metal species, and a second metal species attached to the multifunctional organic ligand, are provided, such articles useful in detecting the presence of a selected target species, as nonliear optical materials, or as scavengers for selected target species.

Microwelding of various metallic materials under ultravacuum (AO 138-10)

NASA Technical Reports Server (NTRS)

Assie, Jean Pierre; Conde, Eric

1991-01-01

The first finding from the AO 138-10 is that cold welding never occurred, and that microwelds didn't even affect the reference (presumably microweld prone) pairs of metals consisting of gold, silver, and chromium. The scientific disappointment from these results must be tempered by the notion of a static AO 138-10 experiment, reflecting the passive character of the global Long Duration Exposure Facility (LDEF) flight. Thus far, it has been theorized that cold welding results from the peeling of the oxide layer, that is formed in an earth environment, by the space environment since such a layer no longer grows in space. In fact, such stripping of the oxide layer supposes relative motion of the contacting materials. In the absence of such motion, as in this experiment, oxidation will preserve its integrity and continue to prevent microwelding. More bewildering is that there was no microwelding of the reference pairs. Even though AO 138-10 failed scientific expectations, as did the LDEF structure with cold welding, the positive, functional aspect to keep in mind is the safe operation of single-shot (appendage releasing and/or latching) mechanisms, unhindered by microwelding in a space vacuum, as now demonstrated by the statically representative pairs of materials. Other aspects of the experiment are discussed.

Effects of anodic oxidation parameters on a modified titanium surface.

PubMed

Park, Il Song; Lee, Min Ho; Bae, Tae Sung; Seol, Kyeong Won

2008-02-01

Anodic oxidation is an electrochemical treatment that can be used to control the thickness of an oxide layer formed on a titanium surface. This procedure has the advantage of allowing the ions contained in an electrolyte to deposit onto the oxide layer. The characteristics of a layer treated with anodic oxidation can vary according to the type and concentration of the electrolytes as well as the processing variables used during anodic oxidation. In this study, the constant electrolyte for anodic oxidation was a mixed solution containing 0.02 M DL-alpha-glycerophosphate disodium salt and 0.2M calcium acetate. Anodic oxidation was carried out at different voltages, current densities, and duration of anodic oxidation. The results showed that the current density and variation in the duration of anodic oxidation did not have a large effect on the change in the characteristics of the layer. On the other hand, the size of the micropores was increased with increasing voltage of anodic oxidation, and anatase and rutile phases were found to co-exist in the porous titanium dioxide layer. In addition, the thickness of the oxide layer on titanium and the characteristic of corrosion resistance increased with increasing voltage. The MTT test showed that the cell viability was increased considerably as a result of anodic oxidation. The anodizing voltage is an important parameter that determines the characteristics of the anodic oxide layer of titanium. (c) 2007 Wiley Periodicals, Inc.

Thin film photovoltaic devices with a minimally conductive buffer layer

DOEpatents

Barnes, Teresa M.; Burst, James

2016-11-15

A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

A Microstructural and Kinetic Investigation of the KCl-Induced Corrosion of an FeCrAl Alloy at 600 °C

DOE PAGES

Israelsson, Niklas; Unocic, Kinga A.; Hellström, K.; ...

2015-03-18

In this paper, the corrosion behaviour of a FeCrAl alloy was investigated at 600 °C in O 2 + H 2O with solid KCl applied. A kinetics and microstructural investigation showed that KCl accelerates corrosion and that potassium chromate formation depletes the protective scale in Cr, thus triggering the formation of a fast-growing iron-rich scale. Iron oxide was found to grow both inward and outward, on either side of the initial oxide. A chromia layer is formed with time underneath the iron oxide. Finally, it was found that although the alloy does not form a continuous pure alumina scale atmore » the investigated temperature, aluminium is, however, always enriched at the oxide/alloy interface.« less

Mechanical Properties of Degraded PMR-15 Resin

NASA Technical Reports Server (NTRS)

Tsuji, Luis C.; McManus, Hugh L.; Bowles, Kenneth J.

1998-01-01

Thermo-oxidative aging produces a non-uniform degradation state in PMR-15 resin. A surface layer, usually attributed to oxidative degradation, forms. This surface layer has different properties from the inner material. A set of material tests was designed to separate the properties of the oxidized surface layer from the properties of interior material. Test specimens were aged at 316 C in either air or nitrogen, for durations of up to 800 hours. The thickness of the oxidized surface layer in air aged specimens, and the shrinkage and Coefficient of Thermal Expansion (CTE) of nitrogen aged specimens were measured directly. Four-point-bend tests were performed to determine modulus of both the oxidized surface layer and the interior material. Bimaterial strip specimens consisting of oxidized surface material and unoxidized interior material were constructed and used to determine surface layer shrinkage and CTE. Results confirm that the surface layer and core materials have substantially different properties.

Method of making an apparatus for transpiration cooling of substrates such as turbine airfoils

DOEpatents

Alvin, Mary Anne; Anderson, Iver; Heidlof, Andy; White, Emma; McMordie, Bruce

2017-02-28

A method and apparatus for generating transpiration cooling using an oxidized porous HTA layer metallurgically bonded to a substrate having micro-channel architectures. The method and apparatus generates a porous HTA layer by spreading generally spherical HTA powder particles on a substrate, partially sintering under O.sub.2 vacuum until the porous HTA layer exhibits a porosity between 20% and 50% and a neck size ratio between 0.1 and 0.5, followed by a controlled oxidation generating an oxidation layer of alumina, chromia, or silica at a thickness of about 20 to about 500 nm. In particular embodiments, the oxidized porous HTA layer and the substrate comprise Ni as a majority element. In other embodiments, the oxidized porous HTA layer and the substrate further comprise Al, and in additional embodiments, the oxidized porous HTA layer and the substrate comprise .gamma.-Ni+.gamma.'-Ni.sub.3Al.

Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

NASA Astrophysics Data System (ADS)

Kim, Kyoung H.; Gordon, Roy G.; Ritenour, Andrew; Antoniadis, Dimitri A.

2007-05-01

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2nm) ALD Hf3N4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8nm, no significant flatband voltage shifts, and midgap density of interface states values of 2×1012cm-1eV-1. Functional n-channel and p-channel Ge field effect transistors with nitride interlayer/high-κ oxide/metal gate stacks are demonstrated.

Oxidation of InP nanowires: a first principles molecular dynamics study.

PubMed

Berwanger, Mailing; Schoenhalz, Aline L; Dos Santos, Cláudia L; Piquini, Paulo

2016-11-16

InP nanowires are candidates for optoelectronic applications, and as protective capping layers of III-V core-shell nanowires. Their surfaces are oxidized under ambient conditions which affects the nanowire physical properties. The majority of theoretical studies of InP nanowires, however, do not take into account the oxide layer at their surfaces. In this work we use first principles molecular dynamics electronic structure calculations to study the first steps in the oxidation process of a non-saturated InP nanowire surface as well as the properties of an already oxidized surface of an InP nanowire. Our calculations show that the O 2 molecules dissociate through several mechanisms, resulting in incorporation of O atoms into the surface layers. The results confirm the experimental observation that the oxidized layers become amorphous but the non-oxidized core layers remain crystalline. Oxygen related bonds at the oxidized layers introduce defective levels at the band gap region, with greater contributions from defects involving In-O and P-O bonds.

Isolation and characterization of nanosheets containing few layers of the Aurivillius family of oxides and metal-organic compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sreedhara, M.B.; Prasad, B.E.; Moirangthem, Monali

2015-04-15

Nanosheets containing few-layers of ferroelectric Aurivillius family of oxides, Bi{sub 2}A{sub n−1}B{sub n}O{sub 3n+3} (where A=Bi{sup 3+}, Ba{sup 2+} etc. and B=Ti{sup 4+}, Fe{sup 3+} etc.) with n=3, 4, 5, 6 and 7 have been prepared by reaction with n-butyllithium, followed by exfoliation in water. The few-layer samples have been characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and other techniques. The few-layer species have a thickness corresponding to a fraction of the c-parameter along which axis the perovskite layers are stacked. Magnetization measurements have been carried out on the few-layer samples containing iron. Few-layer species of a fewmore » layered metal-organic compounds have been obtained by ultrasonication and characterized by Tyndall cones, atomic force microscopy, optical spectroscopy and magnetic measurements. Significant changes in the optical spectra and magnetic properties are found in the few-layer species compared to the bulk samples. Few-layer species of the Aurivillius family of oxides may find uses as thin layer dielectrics in photovoltaics and other applications. - Graphical abstract: Exfoliation of the layered Aurivillius oxides into few-layer nanosheets by chemical Li intercalation using n-BuLi followed by reaction in water. Exfoliation of the layered metal-organic compounds into few-layer nanosheets by ultrasonication. - Highlights: • Few-layer nanosheets of Aurivillius family of oxides with perovskite layers have been generated by lithium intercalation. • Few-layer nanosheets of few layered metal-organic compounds have been generated by ultrasonication. • Few-layer nanosheets of the Aurivillius oxides have been characterized by AFM, TEM and optical spectroscopy. • Aurivillius oxides containing Fe show layer dependent magnetic properties. • Exfoliated few-layer metal-organic compounds show changes in spectroscopic and magnetic properties compared with bulk materials.« less

Growth of micrometric oxide layers for the study of metallic surfaces decontamination by laser

NASA Astrophysics Data System (ADS)

Carvalho, Luisa; Pacquentin, Wilfried; Tabarant, Michel; Maskrot, Hicham; Semerok, Alexandre

2017-09-01

The nuclear industry produces a wide range of radioactive waste in term of level of hazard, contaminants and material. For metallic equipment like steam generators, the radioactivity is mainly located in the oxide surface. In order to study and develop techniques for dismantling and for decontamination in a safe way, it is important to have access to oxide layers with a representative distribution of non-radioactive contaminants. We propose a method of formation of oxide layer on stainless steel 304L with europium (Eu) as contaminant marker. In this method, an Eu-solution is sprayed on the stainless steel samples. The specimen are firstly treated with a pulsed nanosecond laser and secondly the steel samples are exposed to a 600°C furnace for various durations in order to grow an oxide layer. The oxide structure and in-depth distribution of Eu in the oxide layer are analysed by scanning electron microscopy coupled with energy dispersive X-ray microanalyzer, and by glow discharge optical emission or mass spectrometry. The oxide layers were grown to thicknesses in the range of 200 nm to 4.5 μm regarding to the laser treatment parameters and the heating duration. These contaminated oxides have a `duplex structure' with a mean weight percentage of 0.5% of europium in the volume of the oxide layer. It appears that europium implementation prevents the oxide growth by furnace but has no impact on laser heating. These oxide layers are used to study the decontamination of metallic surfaces such as stainless steel 304L using a nanosecond pulsed laser.

Method of fabrication of electrodes and electrolytes

DOEpatents

Jankowski, Alan F.; Morse, Jeffrey D.

2004-01-06

Fuel cell stacks contain an electrolyte layer surrounded on top and bottom by an electrode layer. Porous electrodes are prepared which enable fuel and oxidant to easily flow to the respective electrode-electrolyte interface without the need for high temperatures or pressures to assist the flow. Rigid, inert microspheres in combination with thin-film metal deposition techniques are used to fabricate porous anodes, cathodes, and electrolytes. Microshperes contained in a liquid are randomly dispersed onto a host structure and dried such that the microsperes remain in position. A thin-film deposition technique is subsequently employed to deposit a metal layer onto the microsperes. After such metal layer deposition, the microspheres are removed leaving voids, i.e. pores, in the metal layer, thus forming a porous electrode. Successive repetitions of the fabrication process result in the formation of a continuous fuel cell stack. Such stacks may produce power outputs ranging from about 0.1 Watt to about 50 Watts.

Architecture for coated conductors

DOEpatents

Foltyn, Stephen R.; Arendt, Paul N.; Wang, Haiyan; Stan, Liliana

2010-06-01

Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

Desulfurization apparatus and method

DOEpatents

Rong, Charles; Jiang, Rongzhong; Chu, Deryn

2013-06-18

A method and system for desulfurization comprising first and second metal oxides; a walled enclosure having an inlet and an exhaust for the passage of gas to be treated; the first and second metal oxide being combinable with hydrogen sulfide to produce a reaction comprising a sulfide and water; the first metal oxide forming a first layer and the second metal oxide forming a second layer within the walled surroundings; the first and second layers being positioned so the first layer removes the bulk amount of the hydrogen sulfide from the treated gas prior to passage through the second layer, and the second layer removes substantially all of the remaining hydrogen sulfide from the treated gas; the first metal oxide producing a stoichiometrical capacity in excess of 500 mg sulfur/gram; the second metal oxide reacts with the hydrogen sulfide more favorably but has a stoichometrical capacity which is less than the first reactant; whereby the optimal amount by weight of the first and second metal oxides is achieved by utilizing two to three units by weight of the first metal oxide for every unit of the second metal oxide.

Polarized photoluminescence of nc-Si–SiO{sub x} nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Michailovska, E. V.; Indutnyi, I. Z.; Shepeliavyi, P. E.

2016-01-15

The effect of photoluminescence polarization memory in nc-Si–SiO{sub x} light-emitting structures containing Si nanoparticles (nc-Si) in an oxide matrix is for the first time studied. The polarization properties of continuous and porous nanostructures passivated in HF vapors (or solutions) are studied. It is established that the polarization memory effect is manifested only after treatment of the structures in HF. The effect is also accompanied by a shift of the photoluminescence peak to shorter wavelengths and by a substantial increase in the photoluminescence intensity. It is found that, in anisotropic nc-Si–SiO{sub x} samples produced by oblique deposition in vacuum, the degreemore » of linear photoluminescence polarization in the sample plane exhibits a noticeable orientation dependence and correlates with the orientation of SiO{sub x} nanocolumns forming the structure of the porous layer. These effects are attributed to the transformation of symmetrically shaped Si nanoparticles into asymmetric elongated nc-Si particles upon etching in HF. In continuous layers, nc-Si particles are oriented randomly, whereas in porous structures, their preferential orientation coincides with the orientation of oxide nanocolumns.« less

Ultraviolet Radiation-Induced Skin Aging: The Role of DNA Damage and Oxidative Stress in Epidermal Stem Cell Damage Mediated Skin Aging

PubMed Central

Panich, Uraiwan; Sittithumcharee, Gunya; Rathviboon, Natwarath

2016-01-01

Skin is the largest human organ. Skin continually reconstructs itself to ensure its viability, integrity, and ability to provide protection for the body. Some areas of skin are continuously exposed to a variety of environmental stressors that can inflict direct and indirect damage to skin cell DNA. Skin homeostasis is maintained by mesenchymal stem cells in inner layer dermis and epidermal stem cells (ESCs) in the outer layer epidermis. Reduction of skin stem cell number and function has been linked to impaired skin homeostasis (e.g., skin premature aging and skin cancers). Skin stem cells, with self-renewal capability and multipotency, are frequently affected by environment. Ultraviolet radiation (UVR), a major cause of stem cell DNA damage, can contribute to depletion of stem cells (ESCs and mesenchymal stem cells) and damage of stem cell niche, eventually leading to photoinduced skin aging. In this review, we discuss the role of UV-induced DNA damage and oxidative stress in the skin stem cell aging in order to gain insights into the pathogenesis and develop a way to reduce photoaging of skin cells. PMID:27148370

Functionally gradient material for membrane reactors to convert methane gas into value-added products

DOEpatents

Balachandran, U.; Dusek, J.T.; Kleefisch, M.S.; Kobylinski, T.P.

1996-11-12

A functionally gradient material for a membrane reactor for converting methane gas into value-added-products includes an outer tube of perovskite, which contacts air; an inner tube which contacts methane gas, of zirconium oxide, and a bonding layer between the perovskite and zirconium oxide layers. The bonding layer has one or more layers of a mixture of perovskite and zirconium oxide, with the layers transitioning from an excess of perovskite to an excess of zirconium oxide. The transition layers match thermal expansion coefficients and other physical properties between the two different materials. 7 figs.

Functionally gradient material for membrane reactors to convert methane gas into value-added products

DOEpatents

Balachandran, Uthamalingam; Dusek, Joseph T.; Kleefisch, Mark S.; Kobylinski, Thadeus P.

1996-01-01

A functionally gradient material for a membrane reactor for converting methane gas into value-added-products includes an outer tube of perovskite, which contacts air; an inner tube which contacts methane gas, of zirconium oxide, and a bonding layer between the perovskite and zirconium oxide layers. The bonding layer has one or more layers of a mixture of perovskite and zirconium oxide, with the layers transitioning from an excess of perovskite to an excess of zirconium oxide. The transition layers match thermal expansion coefficients and other physical properties between the two different materials.

Metallization of electronic insulators

DOEpatents

Gottesfeld, Shimshon; Uribe, Francisco A.

1994-01-01

An electroplated element is formed to include an insulating substrate, a conducting polymer polymerized in situ on the substrate, and a metal layer deposited on the conducting polymer. In one application a circuit board is formed by polymerizing pyrrole on an epoxy-fiberglass substrate in a single step process and then electrodepositing a metal over the resulting polypyrrole polymer. No chemical deposition of the metal is required prior to electroplating and the resulting layer of substrate-polymer-metal has excellent adhesion characteristics. The metal deposition is surprisingly smooth and uniform over the relatively high resistance film of polypyrrole. A continuous manufacturing process is obtained by filtering the solution between successive substrates to remove polymer formed in the solution, by maintaining the solution oxidizing potential within selected limits, and by adding a strong oxidant, such as KMnO.sub.4 at periodic intervals to maintain a low sheet resistivity in the resulting conducting polymer film.

Two-Dimensional Superconductivity in the Cuprates Revealed by Atomic-Layer-by- Layer Molecular Beam Epitaxy

DOE PAGES

A. T. Bollinger; Bozovic, I.

2016-08-12

Various electronic phases displayed by cuprates that exhibit high temperature superconductivity continue to attract much interest. We provide a short review of several experiments that we have performed aimed at investigating the superconducting state in these compounds. Measurements on single-phase films, bilayers, and superlattices all point to the conclusion that the high-temperature superconductivity in these materials is an essentially quasi-two dimensional phenomenon. With proper control over the film growth, high-temperature superconductivity can exist in a single copper oxide plane with the critical temperatures as high as that achieved in the bulk samples.

Oxidation behaviour and electrical properties of cobalt/cerium oxide composite coatings for solid oxide fuel cell interconnects

NASA Astrophysics Data System (ADS)

Harthøj, Anders; Holt, Tobias; Møller, Per

2015-05-01

This work evaluates the performance of cobalt/cerium oxide (Co/CeO2) composite coatings and pure Co coatings to be used for solid oxide fuel cell (SOFC) interconnects. The coatings are electroplated on the ferritic stainless steels Crofer 22 APU and Crofer 22H. Coated and uncoated samples are exposed in air at 800 °C for 3000 h and oxidation rates are measured and oxide scale microstructures are investigated. Area-specific resistances (ASR) in air at 850 °C of coated and uncoated samples are also measured. A dual layered oxide scale formed on all coated samples. The outer layer consisted of Co, Mn, Fe and Cr oxide and the inner layer consisted of Cr oxide. The CeO2 was present as discrete particles in the outer oxide layer after exposure. The Cr oxide layer thicknesses and oxidations rates were significantly reduced for Co/CeO2 coated samples compared to for Co coated and uncoated samples. The ASR of all Crofer 22H samples increased significantly faster than of Crofer 22 APU samples which was likely due to the presence of SiO2 in the oxide/metal interface of Crofer 22H.

On the determination of growth stress during oxidation of pure zirconium at elevated temperature

NASA Astrophysics Data System (ADS)

Kurpaska, L.; Favergeon, J.; Lahoche, L.; Moulin, G.

2018-07-01

An experimental approach have been proposed to evaluate growth of stress during high temperature oxidation of pure zirconium. The development of stress in the oxide scale has been investigated experimentally in in-situ conditions by combining the Deflection Test in Monofacial Oxidation (DTMO) with Acoustic Emission analysis (AE). Microstructure of the sample were studied by using Scanning Electron Microscopy technique. Oxidation experiments were performed continuously during 24 h at 400 °C and 500 °C in air under normal atmospheric pressure. Taking into account purely elastic behaviour of the material, primary evolution of growth stress developed in the oxide scale during oxidation process have been estimated. Presented study of the Zr/ZrO2 system revealed two opposite phenomena of stress relief when cooling from 400 °C and 500 °C to room temperature. This study is presented as a tool to understand the phenomena of stress evolution in the zirconia layer during isothermal treatment at high temperature and after cooling.

Indium oxide based fiber optic SPR sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shukla, Sarika; Sharma, Navneet K., E-mail: navneetk.sharma@jiit.ac.in

2016-05-06

Surface plasmon resonance based fiber optic sensor using indium oxide layer is presented and theoretically studied. It has been found that with increase in thickness of indium oxide layer beyond 170 nm, the sensitivity of SPR sensor decreases. 170 nm thick indium oxide layer based SPR sensor holds maximum sensitivity.

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C.E.; Benson, D.K.; Ruth, M.R.

1984-12-21

A solid-state transition metal oxide device comprising a plurality of layers having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

NASA Astrophysics Data System (ADS)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

Effect of gamma irradiation on the photoluminescence of porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru; Romanov, N. M.; Goryachev, D. N.

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a changemore » in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.« less

Structural properties of zirconia - in-situ high temperature XRD characterization

NASA Astrophysics Data System (ADS)

Kurpaska, Lukasz

2018-07-01

In this work, the effect of high temperature on structural properties of pure zirconium have been investigated. In-situ X-ray diffraction analysis of the oxide layer formed at temperature window 25-600 °C on pure zirconium were performed. Conducted experiment aimed at investigation of the zirconia phases developed on surface of the metallic substrate. Based on the conducted studies, possible stress state (during heating, continuous oxidation and cooling), cell parameters and HWHM factor were analyzed. A tetragonal and monoclinic phases peak shifts and intensities change were observed, suggesting that different phases react in different way upon temperature effect.

Nitride stabilized core/shell nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

PubMed

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Fabrication and characterization of iron oxide dextran composite layers

NASA Astrophysics Data System (ADS)

Iconaru, S. L.; Predoi, S. A.; Beuran, M.; Ciobanu, C. S.; Trusca, R.; Ghita, R.; Negoi, I.; Teleanu, G.; Turculet, S. C.; Matei, M.; Badea, Monica; Prodan, A. M.

2018-02-01

Super paramagnetic iron oxide nanoparticles such as maghemite have been shown to exhibit antimicrobial properties [1-5]. Moreover, the iron oxide nanoparticles have been proposed as a potential magnetically controllable antimicrobial agent which could be directed to a specific infection [3-5]. The present research has focused on studies of the surface and structure of iron oxide dextran (D-IO) composite layers surface and structure. These composite layers were deposited on Si substrates. The structure of iron oxide dextran composite layers was investigated by X-Ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR) while the surface morphology was evaluated by Scanning Electron Microscopy (SEM). The structural characterizations of the iron oxide dextran composite layers revealed the basic constituents of both iron and dextran structure. Furthermore, the in vitro evaluation of the antifungal effect of the complex layers, which have been shown revealed to be active against C. albicans cells at distinct intervals of time, is exhibited. Our research came to confirm the fungicidal effect of iron oxide dextran composite layers. Also, our results suggest that iron oxide dextran surface may be used for medical treatment of biofilm associated Candida infections.

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Enhancement in sensitivity of graphene-based zinc oxide assisted bimetallic surface plasmon resonance (SPR) biosensor

NASA Astrophysics Data System (ADS)

Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Mishra, H.; Srivastava, S. K.

2018-03-01

In the present communication, a highly sensitive surface plasmon resonance (SPR) biosensor with Kretschmann configuration having alternate layers, prism/zinc oxide/silver/gold/graphene/biomolecules (ss-DNA) is presented. The optimization of the proposed configuration has been accomplished by keeping the constant thickness of zinc oxide (32 nm), silver (32 nm), graphene (0.34 nm) layer and biomolecules (100 nm) for different values of gold layer thickness (1, 3 and 5 nm). The sensitivity of the proposed SPR biosensor has been demonstrated for a number of design parameters such as gold layer thickness, number of graphene layer, refractive index of biomolecules and the thickness of biomolecules layer. SPR biosensor with optimized geometry has greater sensitivity (66 deg/RIU) than the conventional (52 deg/RIU) as well as other graphene-based (53.2 deg/RIU) SPR biosensor. The effect of zinc oxide layer thickness on the sensitivity of SPR biosensor has also been analysed. From the analysis, it is found that the sensitivity increases significantly by increasing the thickness of zinc oxide layer. It means zinc oxide intermediate layer plays an important role to improve the sensitivity of the biosensor. The sensitivity of SPR biosensor also increases by increasing the number of graphene layer (upto nine layer).

Covalent modification and exfoliation of graphene oxide using ferrocene

NASA Astrophysics Data System (ADS)

Avinash, M. B.; Subrahmanyam, K. S.; Sundarayya, Y.; Govindaraju, T.

2010-09-01

Large scale preparation of single-layer graphene and graphene oxide is of great importance due to their potential applications. We report a simple room temperature method for the exfoliation of graphene oxide using covalent modification of graphene oxide with ferrocene to obtain single-layer graphene oxide sheets. The samples were characterized by FESEM, HRTEM, AFM, EDAX, FT-IR, Raman and Mössbauer spectroscopic studies. HRTEM micrograph of the covalently modified graphene oxide showed increased interlayer spacing of ~2.4 nm due to ferrocene intercalation. The presence of single-layer graphene oxide sheets were confirmed by AFM studies. The covalently modified ferrocene-graphene oxide composite showed interesting magnetic behavior.Large scale preparation of single-layer graphene and graphene oxide is of great importance due to their potential applications. We report a simple room temperature method for the exfoliation of graphene oxide using covalent modification of graphene oxide with ferrocene to obtain single-layer graphene oxide sheets. The samples were characterized by FESEM, HRTEM, AFM, EDAX, FT-IR, Raman and Mössbauer spectroscopic studies. HRTEM micrograph of the covalently modified graphene oxide showed increased interlayer spacing of ~2.4 nm due to ferrocene intercalation. The presence of single-layer graphene oxide sheets were confirmed by AFM studies. The covalently modified ferrocene-graphene oxide composite showed interesting magnetic behavior. Electronic supplementary information (ESI) available: Magnetic data; AFM images; TEM micrographs; and Mössbauer spectroscopic data. See DOI: 10.1039/c0nr00024h

Mechanical Properties of Degraded PMR-15 Resin

NASA Technical Reports Server (NTRS)

Tsuji, Luis C.

2000-01-01

Thermo-oxidative aging produces a nonuniform degradation state in PMR-15 resin. A surface layer, usually attributed to oxidative degradation, forms. This surface layer has different properties from the inner material. A set of material tests was designed to separate the properties of the oxidized surface layer from the properties of interior material. Test specimens were aged at 316 C in either air or nitrogen, for durations of up to 800 hr. The thickness of the oxidized surface layer in air aged specimens, and the shrinkage and coefficient of thermal expansion (CTE) of nitrogen aged specimens were measured directly. The nitrogen-aged specimens were assumed to have the same properties as the interior material in the air-aged specimens. Four-point-bend tests were performed to determine modulus of both the oxidized surface layer and the interior material. Bimaterial strip specimens consisting of oxidized surface material and unoxidized interior material were constructed and used to determine surface layer shrinkage and CTE. Results confirm that the surface layer and core materials have substantially different properties.

Zinc-oxide-based nanostructured materials for heterostructure solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bobkov, A. A.; Maximov, A. I.; Moshnikov, V. A., E-mail: vamoshnikov@mail.ru

Results obtained in the deposition of nanostructured zinc-oxide layers by hydrothermal synthesis as the basic method are presented. The possibility of controlling the structure and morphology of the layers is demonstrated. The important role of the procedure employed to form the nucleating layer is noted. The faceted hexagonal nanoprisms obtained are promising for the fabrication of solar cells based on oxide heterostructures, and aluminum-doped zinc-oxide layers with petal morphology, for the deposition of an antireflection layer. The results are compatible and promising for application in flexible electronics.

Durable metallized polymer mirror

DOEpatents

Schissel, Paul O.; Kennedy, Cheryl E.; Jorgensen, Gary J.; Shinton, Yvonne D.; Goggin, Rita M.

1994-01-01

A metallized polymer mirror construction having improved durability against delamination and tunneling, comprising: an outer layer of polymeric material; a metal oxide layer underlying the outer layer of polymeric material; a silver reflective layer underneath the metal oxide layer; and a layer of adhesive attaching the silver layer to a substrate.

Solder for oxide layer-building metals and alloys

DOEpatents

Kronberg, James W.

1992-01-01

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel. The comosition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than aproximatley 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300.degree. C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Solder for oxide layer-building metals and alloys

DOEpatents

Kronberg, J.W.

1992-09-15

A low temperature solder and method for soldering an oxide layer-building metal such as aluminum, titanium, tantalum or stainless steel is disclosed. The composition comprises tin and zinc; germanium as a wetting agent; preferably small amounts of copper and antimony; and a grit, such as silicon carbide. The grit abrades any oxide layer formed on the surface of the metal as the germanium penetrates beneath and loosens the oxide layer to provide good metal-to-metal contact. The germanium comprises less than approximately 10% by weight of the solder composition so that it provides sufficient wetting action but does not result in a melting temperature above approximately 300 C. The method comprises the steps rubbing the solder against the metal surface so the grit in the solder abrades the surface while heating the surface until the solder begins to melt and the germanium penetrates the oxide layer, then brushing aside any oxide layer loosened by the solder.

Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.

2017-01-10

A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

The reactions of cobalt, iron and nickel in SO2 atmospheres Similarities and differences

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Worrell, W. L.

1985-01-01

The reactions of cobalt, iron and nickel in SO2 atmospheres are reviewed and compared. A mixed oxide-sulfide product layer is observed in all cases. Cobalt and nickel exhibit similar behavior. The observed rates are near the sulfidation rates, and the reaction rate is strongly influenced by the outward diffusion of metal through an interconnected sulfide network. A continuous interconnected sulfide is not observed in the oxide-sulfide scales formed on iron, and the reaction rates are more difficult to summarize. The differences and similarities among the three metals are explained in terms of the absence of scale-gas equilibrium and the ratio of the metal diffusivity in the corresponding oxide and sulfide.

The reactions of cobalt, iron and nickel in SO-2 atmospheres: Similarities and differences

NASA Technical Reports Server (NTRS)

Jacobson, N. S.; Worrell, W. L.

1984-01-01

The reactions of cobalt, iron and nickel in SO2 atmospheres are reviewed and compared. A mixed oxide-sulfide product layer is observed in all cases. Cobalt and nickel exhibits similar behavior. The observed rates are near the sulfidation rates, and the reaction rate is strongly influenced by the outward diffusion of metal through an interconnected sulfide network. A continuous interconnected sulfide is not observed in the oxide-sulfide scales formed on iron, and the reaction rates are more difficult to summarize. The differences and similarities among the three metals are explained in terms of the absence of scale-gas equilibrium and the ratio of the metal diffusivity in the corresponding oxide and sulfide.

Nano-sized layered Mn oxides as promising and biomimetic water oxidizing catalysts for water splitting in artificial photosynthetic systems.

PubMed

Najafpour, Mohammad Mahdi; Heidari, Sima; Amini, Emad; Khatamian, Masoumeh; Carpentier, Robert; Allakhverdiev, Suleyman I

2014-04-05

One challenge in artificial photosynthetic systems is the development of artificial model compounds to oxidize water. The water-oxidizing complex of Photosystem II which is responsible for biological water oxidation contains a cluster of four Mn ions bridged by five oxygen atoms. Layered Mn oxides as efficient, stable, low cost, environmentally friendly and easy to use, synthesize, and manufacture compounds could be considered as functional and structural models for the site. Because of the related structure of these Mn oxides and the catalytic centre of the active site of the water oxidizing complex of Photosystem II, the study of layered Mn oxides may also help to understand more about the mechanism of water oxidation by the natural site. This review provides an overview of the current status of layered Mn oxides in artificial photosynthesis and discuss the sophisticated design strategies for Mn oxides as water oxidizing catalysts. Copyright © 2014 Elsevier B.V. All rights reserved.

Durable metallized polymer mirror

DOEpatents

Schissel, P.O.; Kennedy, C.E.; Jorgensen, G.J.; Shinton, Y.D.; Goggin, R.M.

1994-11-01

A metallized polymer mirror construction is disclosed having improved durability against delamination and tunneling, comprising: an outer layer of polymeric material; a metal oxide layer underlying the outer layer of polymeric material; a silver reflective layer underneath the metal oxide layer; and a layer of adhesive attaching the silver layer to a substrate. 6 figs.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2000-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

DOEpatents

Jansen, Kai W.; Maley, Nagi

2001-01-01

High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

Electro-deposition of superconductor oxide films

DOEpatents

Bhattacharya, Raghu N.

2001-01-01

Methods for preparing high quality superconducting oxide precursors which are well suited for further oxidation and annealing to form superconducting oxide films. The method comprises forming a multilayered superconducting precursor on a substrate by providing an electrodeposition bath comprising an electrolyte medium and a substrate electrode, and providing to the bath a plurality of precursor metal salts which are capable of exhibiting superconducting properties upon subsequent treatment. The superconducting precursor is then formed by electrodepositing a first electrodeposited (ED) layer onto the substrate electrode, followed by depositing a layer of silver onto the first electrodeposited (ED) layer, and then electrodepositing a second electrodeposited (ED) layer onto the Ag layer. The multilayered superconducting precursor is suitable for oxidation at a sufficient annealing temperature in air or an oxygen-containing atmosphere to form a crystalline superconducting oxide film.

Effect of water vapor on evolution of a thick Pt-layer modified oxide on the NiCoCrAl alloy at high temperature

NASA Astrophysics Data System (ADS)

Song, Peng; He, Xuan; Xiong, Xiping; Ma, Hongqing; Song, Qunling; Lü, Jianguo; Lu, Jiansheng

2018-03-01

To investigate the effect of water vapor on the novel Pt-containing oxide growth behavior, Pt-addition within the oxide layer on the surface of NiCoCrAl coating and furnace cycle tests were carried out at 1050 °C in air and air plus water vapor. The thick Pt-containing oxide layer on NiCoCrAl exhibits a different oxidation growth behavior compared to the conventional Pt-diffusion metallic coatings. The Pt-containing oxide after oxidation in air plus water vapor showed a much thicker oxide layer compare to the ones without Pt addition, and also presented a much better coating adhesion. During the oxidation process in air, Pt promotes the spinel (NiCr2O4) formation. However, the Cr2O3 formed in air with water vapor and fixed Pt within the complex oxide layer. The water vapor promoted the Ni and Co outer-diffusion, and combined with Pt to form CoPt compounds on the surface of the NiCoCrAl coating system.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Magnetoresistance enhancement in specular, bottom-pinned, Mn83Ir17 spin valves with nano-oxide layers

NASA Astrophysics Data System (ADS)

Veloso, A.; Freitas, P. P.; Wei, P.; Barradas, N. P.; Soares, J. C.; Almeida, B.; Sousa, J. B.

2000-08-01

Bottom-pinned Mn83Ir17 spin valves with enhanced specular scattering were fabricated, showing magnetoresistance (MR) values up to 13.6%, lower sheet resistance R□ and higher ΔR□. Two nano-oxide layers (NOL) are grown on both sides of the CoFe/Cu/CoFe spin valve structure by natural oxidation or remote plasma oxidation of the starting CoFe layer. Maximum MR enhancement is obtained after just 1 min plasma oxidation. Rutherford backscattering analysis shows that a 15±2 Å oxide layer grows at the expense of the initial (prior to oxidation) CoFe layer, with ˜12% reduction of the initial 40 Å CoFe thickness. X-ray reflectometry indicates that Kiessig fringes become better defined after NOL growth, indicating smoother inner interfaces, in agreement with the observed decrease of the spin valve ferromagnetic Néel coupling.

Influence of temperature on oxidation mechanisms of fiber-textured AlTiTaN coatings.

PubMed

Khetan, Vishal; Valle, Nathalie; Duday, David; Michotte, Claude; Delplancke-Ogletree, Marie-Paule; Choquet, Patrick

2014-03-26

The oxidation kinetics of AlTiTaN hard coatings deposited at 265 °C by DC magnetron sputtering were investigated between 700 and 950 °C for various durations. By combining dynamic secondary ion mass spectrometry (D-SIMS), X-ray diffraction (XRD), and transmission electron microscopy (TEM) investigations of the different oxidized coatings, we were able to highlight the oxidation mechanisms involved. The TEM cross-section observations combined with XRD analysis show that a single amorphous oxide layer comprising Ti, Al, and Ta formed at 700 °C. Above 750 °C, the oxide scale transforms into a bilayer oxide comprising an Al-rich upper oxide layer and a Ti/Ta-rich oxide layer at the interface with the coated nitride layer. From the D-SIMS analysis, it could be proposed that the oxidation mechanism was governed primarily by inward diffusion of O for temperatures of ≤700 °C, while at ≥750 °C, it is controlled by outward diffusion of Al and inward diffusion of O. Via a combination of structural and chemical analysis, it is possible to propose that crystallization of rutile lattice favors the outward diffusion of Al within the AlTiTa mixed oxide layer with an increase in the temperature of oxidation. The difference in the mechanisms of oxidation at 700 and 900 °C also influences the oxidation kinetics with respect to oxidation time. Formation of a protective alumina layer decreases the rate of oxidation at 900 °C for long durations of oxidation compared to 700 °C. Along with the oxidation behavior, the enhanced thermal stability of AlTiTaN compared to that of the TiAlN coating is illustrated.

Polymer/graphite oxide composites as high-performance materials for electric double layer capacitors

NASA Astrophysics Data System (ADS)

Tien, Chien-Pin; Teng, Hsisheng

A single graphene sheet represents a carbon material with the highest surface area available to accommodating molecules or ions for physical and chemical interactions. Here we demonstrate in an electric double layer capacitor the outstanding performance of graphite oxide for providing a platform for double layer formation. Graphite oxide is generally the intermediate compound for obtaining separated graphene sheets. Instead of reduction with hydrazine, we incorporate graphite oxide with a poly(ethylene oxide)-based polymer and anchor the graphene oxide sheets with poly(propylene oxide) diamines. This polymer/graphite oxide composite shows in a "dry" gel-electrolyte system a double layer capacitance as high as 130 F g -1. The polymer incorporation developed here can significantly diversify the application of graphene-based materials in energy storage devices.

The formation and potential importance of cemented layers in inactive sulfide mine tailings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blowes, D.W.; Reardon, E.J.; Cherry, J.A.

Investigations of inactive sulfide-rich tailings impoundments at the Heath Steele (New Brunswick) and Waite Amulet (Quebec) minesites have revealed two distinct types of cemented layers or hardpans. That at Heath Steele is 10-15 cm thick, occurs 20-30 cm below the depth of active oxidation, is continuous throughout the tailings impoundment, and is characterized by cementation of tailings by gypsum and Fe(II) solid phases, principally melanterite. Hardpan at the Waite Amulet site is only 1-5 cm thick, is laterally discontinuous (10-100 cm), occurs at the depth of active oxidation, and is characterized by cementation of tailings by Fe(III) minerals, principally goethite,more » lepidocrocite, ferrihydrite, and jarosite. At Heath Steele, an accumulation of gas-phase CO{sub 2}, of up to 60{percent} of the pore gas, occurs below the hardpan. The calculated diffusivity of the hardpan layer is only about 1/100 that of the overlying, uncemented tailings. The pore-water chemistry at Heath Steele has changed little over a 10-year period, suggesting that the cemented layer restricts the movement of dissolved metals through the tailings and also acts as a zone of metal accumulation. Generation of a cemented layer therefore has significant environmental and economic implications. It is likely that, in sulfide-rich tailings impoundments, the addition of carbonate-rich buffering material during the late stages of tailings deposition would enhance the formation of hardpan layers.« less

A Systems Approach to Depaint Chemistry

DTIC Science & Technology

2009-02-01

continuous colored film by curing through solvent evaporation, oxidation, catylization or other means. – Vehicle: Film former, binder, resin or polymer...impart large changes in properties. – Suspending agents – Driers – Anti-Skinning Agents – Wetting Agents – Anti- Foaming Agents – Coalescing Agents ...volatile stripper inside the coating. Paint Release Agent Coating Removal Mechanism Zone1: PRA Layer Zone2: PRA Initial Permeation into coating system Epoxy

Nanoscale lamellar photoconductor hybrids and methods of making same

DOEpatents

Stupp, Samuel I; Goldberger, Josh; Sofos, Marina

2013-02-05

An article of manufacture and methods of making same. In one embodiment, the article of manufacture has a plurality of zinc oxide layers substantially in parallel, wherein each zinc oxide layer has a thickness d.sub.1, and a plurality of organic molecule layers substantially in parallel, wherein each organic molecule layer has a thickness d.sub.2 and a plurality of molecules with a functional group that is bindable to zinc ions, wherein for every pair of neighboring zinc oxide layers, one of the plurality of organic molecule layers is positioned in between the pair of neighboring zinc oxide layers to allow the functional groups of the plurality of organic molecules to bind to zinc ions in the neighboring zinc oxide layers to form a lamellar hybrid structure with a geometric periodicity d.sub.1+d.sub.2, and wherein d.sub.1 and d.sub.2 satisfy the relationship of d.sub.1.ltoreq.d.sub.2.ltoreq.3d.sub.1.

Adsorption and Exchange Dynamics in Aging Hydroxyethylcellulose Layers on Silica.

PubMed

Mubarekyan; Santore

2000-07-15

The adsorption kinetics of hydroxyethylcellulose (HEC) on silica and relaxations in adsorbed HEC layers were probed using total internal reflectance fluorescence and near-Brewster reflectivity. Like many random-coil polymers, HEC was found to adsorb at the transport-limited rate. Relaxations occurred at nearly constant interfacial mass when HEC layers were exposed to aqueous solvent, causing the subsequent exchange of chains between the layer and the free solution to become increasingly hindered. Eventually, on the time scale of a day, layers became immobilized and unable to accommodate chains from free solution. A continued fluorescence decay, beyond time scales that could be probed with self exchange, suggested further relaxations of the adsorbed HEC. The polydisperse HEC system (with an average molecular weight near 450,000) behaved qualitatively similar to molecular weight standard polyethylene oxide (PEO) layers on silica. For instance, relaxations in PEO layers occurred on a time scale of 10-20 h, like the HEC layers. Young layers of the latter, however, exhibited self-exchange kinetics that were an order of magnitude slower than PEO layers of similar age. This difference in adsorbed layer dynamics was attributed to HEC's stiffer backbone, compared with flexible PEO. Copyright 2000 Academic Press.

Air-stable electrical conduction in oxidized poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] thin films

NASA Astrophysics Data System (ADS)

Hossein-Babaei, F.; Shabani, P.; Azadinia, M.

2013-11-01

Oxidation-caused electroluminescence and electrical conduction deteriorations in poly[2-methoxy-5-(2-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) have prevented the material from being used in applications requiring air exposure. Here, we report air-stable electrical conduction in oxidized MEH-PPV layers produced by room temperature annealing of MEH-PPV thin films in air. Oxidized layers exhibit lower, but stable, conductivities. As the process is irreversible, the final conductivity is retained in vacuum, inert gas, hydrogen, and oxygen. The oxidation rates recorded at different conditions for layers of varied thickness and electrode configuration are described by a surface oxidation model. Potentials of the oxidized MEH-PPV layers in sensor technology are demonstrated.

Thermal oxidation of single crystal aluminum antimonide and materials having the same

DOEpatents

Sherohman, John William; Yee, Jick Hong; Coombs, III, Arthur William; Wu, Kuang Jen J.

2012-12-25

In one embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a partial vacuum atmosphere at a temperature conducive for air adsorbed molecules to desorb, surface molecule groups to decompose, and elemental Sb to evaporate from a surface of the AlSb crystal and exposing the AlSb crystal to an atmosphere comprising oxygen to form a crystalline oxide layer on the surface of the AlSb crystal. In another embodiment, a method for forming a non-conductive crystalline oxide layer on an AlSb crystal includes heat treating an AlSb crystal in a non-oxidizing atmosphere at a temperature conducive for decomposition of an amorphous oxidized surface layer and evaporation of elemental Sb from the AlSb crystal surface and forming stable oxides of Al and Sb from residual surface oxygen to form a crystalline oxide layer on the surface of the AlSb crystal.

Color tone and interfacial microstructure of white oxide layer on commercially pure Ti and Ti-Nb-Ta-Zr alloys

NASA Astrophysics Data System (ADS)

Miura-Fujiwara, Eri; Mizushima, Keisuke; Watanabe, Yoshimi; Kasuga, Toshihiro; Niinomi, Mitsuo

2014-11-01

In this study, the relationships among oxidation condition, color tone, and the cross-sectional microstructure of the oxide layer on commercially pure (CP) Ti and Ti-36Nb-2Ta-3Zr-0.3O were investigated. “White metals” are ideal metallic materials having a white color with sufficient strength and ductility like a metal. Such materials have long been sought for in dentistry. We have found that the specific biomedical Ti alloys, such as CP Ti, Ti-36Nb-2Ta-3Zr-0.3O, and Ti-29Nb-13Ta-4.6Zr, form a bright yellowish-white oxide layer after a particular oxidation heat treatment. The brightness L* and yellowness +b* of the oxide layer on CP Ti and Ti-36Nb-2Ta-3Zr-0.3O increased with heating time and temperature. Microstructural observations indicated that the oxide layer on Ti-29Nb-13Ta-4.6Zr and Ti-36Nb-2Ta-3Zr-0.3O was dense and firm, whereas a piecrust-like layer was formed on CP Ti. The results obtained in this study suggest that oxide layer coating on Ti-36Nb-2Ta-3Zr-0.3O is an excellent technique for dental applications.

Air-Impregnated Nanoporous Anodic Aluminum Oxide Layers for Enhancing the Corrosion Resistance of Aluminum.

PubMed

Jeong, Chanyoung; Lee, Junghoon; Sheppard, Keith; Choi, Chang-Hwan

2015-10-13

Nanoporous anodic aluminum oxide layers were fabricated on aluminum substrates with systematically varied pore diameters (20-80 nm) and oxide thicknesses (150-500 nm) by controlling the anodizing voltage and time and subsequent pore-widening process conditions. The porous nanostructures were then coated with a thin (only a couple of nanometers thick) Teflon film to make the surface hydrophobic and trap air in the pores. The corrosion resistance of the aluminum substrate was evaluated by a potentiodynamic polarization measurement in 3.5 wt % NaCl solution (saltwater). Results showed that the hydrophobic nanoporous anodic aluminum oxide layer significantly enhanced the corrosion resistance of the aluminum substrate compared to a hydrophilic oxide layer of the same nanostructures, to bare (nonanodized) aluminum with only a natural oxide layer on top, and to the latter coated with a thin Teflon film. The hydrophobic nanoporous anodic aluminum oxide layer with the largest pore diameter and the thickest oxide layer (i.e., the maximized air fraction) resulted in the best corrosion resistance with a corrosion inhibition efficiency of up to 99% for up to 7 days. The results demonstrate that the air impregnating the hydrophobic nanopores can effectively inhibit the penetration of corrosive media into the pores, leading to a significant improvement in corrosion resistance.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2005-10-18

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2003-09-09

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Structure of oxides prepared by decomposition of layered double Mg–Al and Ni–Al hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cherepanova, Svetlana V.; Novosibirsk State University, Novosibirsk; Leont’eva, Natalya N., E-mail: n_n_leonteva@list.ru

2015-05-15

Abstracts: Thermal decomposition of Mg–Al and Ni–Al layered double hydroxides LDH at temperatures lower than 800 °C leads to the formation of oxides with different structures. Mg–Al oxide has a very defective structure and consists of octahedral layers as in periclase MgO and mixed octahedral–tetrahedral layers as in spinel MgAl{sub 2}O{sub 4}. Mixed Ni–Al oxide has a sandwich-like structure, consisting of a core with Al-doped NiO-like structure and some surface layers with spinel NiAl{sub 2}O{sub 4} structure epitaxial connected with the core. Suggested models were verified by simulation of X-ray diffraction patterns using DIFFaX code, as well as HRTEM, IR-,more » UV-spectroscopies, and XPS. - Graphical abstract: In the Mg–Al layered double hydroxide Al{sup 3+} ions migrate into interlayers during decomposition. The Mg–Al oxide represents sequence of octahedral and octahedral–tetrahedral spinel layers with vacancies. The Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers as a result of migration of Al{sup 3+} ions on the surface. The models explain the presence and absence of “memory effect” for the Mg–Al and Ni–Al oxides, respectively. - Highlights: • We study products of Mg(Ni)–Al LDH decomposition by calcination at 500(400)–800 °C. • In Mg–Al/Ni–Al LDH Al ions migrate into interlayers/on the surface during decomposition. • Mg–Al oxide represents sequence of periclase- and spinel-like layers with vacancies. • Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers. • The models explain the presence/absence of “memory effect” for Mg–Al/Ni–Al oxides.« less

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, William L.; Vanheusden, Karel J. R.; Schwank, James R.; Fleetwood, Daniel M.; Shaneyfelt, Marty R.; Winokur, Peter S.; Devine, Roderick A. B.

1998-01-01

A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

W-containing oxide layers obtained on aluminum and titanium by PEO as catalysts in thiophene oxidation

NASA Astrophysics Data System (ADS)

Rudnev, V. S.; Lukiyanchuk, I. V.; Vasilyeva, M. S.; Morozova, V. P.; Zelikman, V. M.; Tarkhanova, I. G.

2017-11-01

W-containing oxide layers fabricated on titanium and aluminum alloys by Plasma electrolytic oxidation (PEO) have been tested in the reaction of the peroxide oxidation of thiophene. Samples with two types of coatings have been investigated. Coatings I contained tungsten oxide in the matrix and on the surface of amorphous silica-titania or silica-alumina layers, while coatings II comprised crystalline WO3 and/or Al2(WO4)3. Aluminum-supported catalyst containing a smallest amount of transition metals in the form of tungsten oxides and manganese oxides in low oxidation levels showed high activity and stability.

Fabrication technology of CNT-Nickel Oxide based planar pseudocapacitor for MEMS and NEMS

NASA Astrophysics Data System (ADS)

Lebedev, E. A.; Kitsyuk, E. P.; Gavrilin, I. M.; Gromov, D. G.; Gruzdev, N. E.; Gavrilov, S. A.; Dronov, A. A.; Pavlov, A. A.

2015-11-01

Fabrication technology of planar pseudocapacitor (PsC) based on carbon nanotube (CNT) forest, synthesized using plasma enhanced chemical vapor deposition (PECVD) method, covered with thin nickel oxide layer deposited by successive ionic layer adsorption and reaction (SILAR) method, is demonstrated. Dependences of deposited oxide layers thickness on device specific capacities is studied. It is shown that pseudocapacity of nickel oxide thin layer increases specific capacity of the CNT's based device up to 2.5 times.

Modification of surface oxide layers of titanium targets for increasing lifetime of neutron tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zakharov, A. M., E-mail: zam@plasma.mephi.ru; Dvoichenkova, O. A.; Evsin, A. E.

The peculiarities of interaction of hydrogen ions with a titanium target and its surface oxide layer were studied. Two ways of modification of the surface oxide layers of titanium targets for increasing the lifetime of neutron tubes were proposed: (1) deposition of an yttrium oxide barrier layer on the target surface; (2) implementation of neutron tube work regime in which the target is irradiated with ions with energies lower than 1000 eV between high-energy ion irradiation pulses.

Study of the continuous corrosion in an oxidation environment derived from the theoretical combustion products in a refinery. Case study: Ferritic steel ASTM A335 P91

NASA Astrophysics Data System (ADS)

Alviz Meza, A.; Kafarov, V.; Y Peña Ballesteros, D.

2017-12-01

Corrosion studies are key element that ensure the correct functioning of equipment in the industrial sector. The oxidation phenomena were evaluated, taking as a case study steel ASTM A335 P91 (P91), a steel of typical use in equipment that work at high temperatures. Five (5) exposure times were selected for the experimental development: 1, 20, 50, 100 and 200h; as well as four (4) analysis temperatures: 450, 550, 650 and 750°C. Through the metallographic analysis was possible to evidence the presence of multiple carbide precipitates and a ferritic structure, after all the temperatures tested. On the other hand, the analysis of hardness and microhardness showed an increase for all the evaluated temperatures. These increases were mainly related to the precipitation of carbides in the coupons of P91. Regarding to the chemical analysis, it was possible to conclude that after 200h of experimentation in each temperature, a layer of duplex oxide, composed mainly of hematite, magnetite and spinel iron-chromium, was formed in the O2/H2O atmosphere. Finally, the kinetic study demonstrated that the oxide layer formed on each coupon of P91 was of protective character.

Oxidized film structure and method of making epitaxial metal oxide structure

DOEpatents

Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

2003-02-25

A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

DOE PAGES

Lee, J. H.; Luo, G.; Tung, I. C.; ...

2014-08-03

The A n+1B nO 3n+1 Ruddlesden–Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of themore » intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden–Popper phases. Lastly, we demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La 3Ni 2O 7.« less

Effects of iron content in Ni-Cr-xFe alloys and immersion time on the oxide films formed in a simulated PWR water environment

NASA Astrophysics Data System (ADS)

Ru, Xiangkun; Lu, Zhanpeng; Chen, Junjie; Han, Guangdong; Zhang, Jinlong; Hu, Pengfei; Liang, Xue

2017-12-01

The iron content in Ni-Cr-xFe (x = 0-9 at.%) alloys strongly affected the properties of oxide films after 978 h of immersion in the simulated PWR primary water environment at 310 °C. Increasing the iron content in the alloys increased the amount of iron-bearing polyhedral spinel oxide particles in the outer oxide layer and increased the local oxidation penetrations into the alloy matrix from the chromium-rich inner oxide layer. The effects of iron content in the alloys on the oxide film properties after 500 h of immersion were less significant than those after 978 h. Iron content increased, and chromium content decreased, in the outer oxide layer with increasing iron content in the alloys. Increasing the immersion time facilitated the formation of the local oxidation penetrations along the matrix/film interface and the nickel-bearing spinel oxides in the outer oxide layer.

Structure and nano-mechanical characteristics of surface oxide layers on a metallic glass.

PubMed

Caron, A; Qin, C L; Gu, L; González, S; Shluger, A; Fecht, H-J; Louzguine-Luzgin, D V; Inoue, A

2011-03-04

Owing to their low elastic moduli, high specific strength and excellent processing characteristics in the undercooled liquid state, metallic glasses are promising materials for applications in micromechanical systems. With miniaturization of metallic mechanical components down to the micrometer scale, the importance of a native oxide layer on a glass surface is increasing. In this work we use TEM and XPS to characterize the structure and properties of the native oxide layer grown on Ni(62)Nb(38) metallic glass and their evolution after annealing in air. The thickness of the oxide layer almost doubled after annealing. In both cases the oxide layer is amorphous and consists predominantly of Nb oxide. We investigate the friction behavior at low loads and in ambient conditions (i.e. at T = 295 K and 60% air humidity) of both as-cast and annealed samples by friction force microscopy. After annealing the friction coefficient is found to have significantly increased. We attribute this effect to the increase of the mechanical stability of the oxide layer upon annealing.

Investigations into the structure of PEO-layers for understanding of layer formation

NASA Astrophysics Data System (ADS)

Friedemann, A. E. R.; Thiel, K.; Haßlinger, U.; Ritter, M.; Gesing, Th. M.; Plagemann, P.

2018-06-01

Plasma electrolytic oxidation (PEO) is a type of high-voltage anodic oxidation process capable of producing a thick oxide layer with a wide variety of structural and chemical properties influenced by the electrolytic system. This process enables the combined adjustment of various characteristics, i.e. the morphology and chemical composition. The procedure facilitates the possibility of generating an individual structure as well as forming a crystalline surface in a single step. A highly porous surface with a high crystalline content consisting of titanium dioxide phases is ensured through the process of plasma electrolytic oxidizing pure titanium. In the present study plasma electrolytic oxidized TiO2-layers were investigated regarding their crystallinity through the layer thickness. The layers were prepared with a high applied voltage of 280 V to obtain a PEO-layer with highly crystalline anatase and rutile amounts. Raman spectroscopy and electron backscatter diffraction (EBSD) were selected to clarify the structure of the oxide layer with regard to its crystallinity and phase composition. The composition of the TiO2-phases is more or less irregularly distributed as a result of the higher energy input on the uppermost side of the layer. Scanning transmission electron microscopy (STEM) provided a deeper understanding of the structure and the effects of plasma discharges on the layer. It was observed that the plasma discharges have a strong influence on crystallite formation on top of the oxide layer and also at the boundary layer to the titanium substrate. Therefore, small crystallites of TiO2 could be detected in these regions. In addition, it was shown that amorphous TiO2 phases are formed around the characteristic pore structures, which allows the conclusion to be drawn that a rapid cooling from the gas phase had to take place in these areas.

Polycrystalline ferroelectric or multiferroic oxide articles on biaxially textured substrates and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goyal, Amit; Shin, Junsoo

A polycrystalline ferroelectric and/or multiferroic oxide article includes a substrate having a biaxially textured surface; at least one biaxially textured buffer layer supported by the substrate; and a biaxially textured ferroelectric or multiferroic oxide layer supported by the buffer layer. Methods for making polycrystalline ferroelectric and/or multiferroic oxide articles are also disclosed.

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Polyelectrolyte/Graphene Oxide Barrier Film for Flexible OLED.

PubMed

Yang, Seung-Yeol; Park, Jongwhan; Kim, Yong-Seog

2015-10-01

Ultra-thin flexible nano-composite barrier layer consists of graphene oxide and polyelectrolyte was prepared using the layer-by-layer processing method. Microstructures of the barrier layer was optimized via modifying coating conditions and inducing chemical reactions. Although the barrier layer consists of hydrophilic polyelectrolyte was not effective in blocking the water vapor permeation, the chemical reduction of graphene oxide as well as conversion of polyelectrolyte to hydrophobic nature were very effective in reducing the permeation.

Highly efficient and bendable organic solar cells using a three-dimensional transparent conducting electrode

NASA Astrophysics Data System (ADS)

Wang, Wei; Bae, Tae-Sung; Park, Yeon Hyun; Kim, Dong Ho; Lee, Sunghun; Min, Guanghui; Lee, Gun-Hwan; Song, Myungkwan; Yun, Jungheum

2014-05-01

A three-dimensional (3D) transparent conducting electrode, consisting of a quasi-periodic array of discrete indium-tin-oxide (ITO) nanoparticles superimposed on a highly conducting oxide-metal-oxide multilayer using ITO and silver oxide (AgOx) as oxide and metal layers, respectively, is synthesized on a polymer substrate and used as an anode in highly flexible organic solar cells (OSCs). The 3D electrode is fabricated using vacuum sputtering sequences to achieve self-assembly of distinct ITO nanoparticles on a continuous ITO-AgOx-ITO multilayer at room-temperature without applying conventional high-temperature vapour-liquid-solid growth, solution-based nanoparticle coating, or complicated nanopatterning techniques. Since the 3D electrode enhances the hole-extraction rate in OSCs owing to its high surface area and low effective series resistance for hole transport, OSCs based on this 3D electrode exhibit a power conversion efficiency that is 11-22% higher than that achievable in OSCs by means of conventional planar ITO film-type electrodes. A record high efficiency of 6.74% can be achieved in a bendable OSC fabricated on a poly(ethylene terephthalate) substrate.A three-dimensional (3D) transparent conducting electrode, consisting of a quasi-periodic array of discrete indium-tin-oxide (ITO) nanoparticles superimposed on a highly conducting oxide-metal-oxide multilayer using ITO and silver oxide (AgOx) as oxide and metal layers, respectively, is synthesized on a polymer substrate and used as an anode in highly flexible organic solar cells (OSCs). The 3D electrode is fabricated using vacuum sputtering sequences to achieve self-assembly of distinct ITO nanoparticles on a continuous ITO-AgOx-ITO multilayer at room-temperature without applying conventional high-temperature vapour-liquid-solid growth, solution-based nanoparticle coating, or complicated nanopatterning techniques. Since the 3D electrode enhances the hole-extraction rate in OSCs owing to its high surface area and low effective series resistance for hole transport, OSCs based on this 3D electrode exhibit a power conversion efficiency that is 11-22% higher than that achievable in OSCs by means of conventional planar ITO film-type electrodes. A record high efficiency of 6.74% can be achieved in a bendable OSC fabricated on a poly(ethylene terephthalate) substrate. Electronic supplementary information (ESI) available: FE-SEM images of Ar plasma-treated PET surfaces, curve deconvolution of XPS Ag 3d5/2 spectra, refractive indices and extinction coefficients of the Ag and AgOx (O/Ag = 10 at%), changes in the specular reflections of the IAOI-NPA and IAI-NPA electrodes for different O/Ag atomic ratios and thicknesses of the AgOx layer, and comparisons between the Jsc values determined from simulated AM 1.5G illumination and IPCE spectra. See DOI: 10.1039/c3nr06755f

Safety shutdown separators

DOEpatents

Carlson, Steven Allen; Anakor, Ifenna Kingsley; Farrell, Greg Robert

2015-06-30

The present invention pertains to electrochemical cells which comprise (a) an anode; (b) a cathode; (c) a solid porous separator, such as a polyolefin, xerogel, or inorganic oxide separator; and (d) a nonaqueous electrolyte, wherein the separator comprises a porous membrane having a microporous coating comprising polymer particles which have not coalesced to form a continuous film. This microporous coating on the separator acts as a safety shutdown layer that rapidly increases the internal resistivity and shuts the cell down upon heating to an elevated temperature, such as 110.degree. C. Also provided are methods for increasing the safety of an electrochemical cell by utilizing such separators with a safety shutdown layer.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, C.H.; Evans, J.T. Jr.

1998-11-24

A method is described for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100 C and 300 C for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer. 1 fig.

Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

DOEpatents

Seager, Carleton H.; Evans, Jr., Joseph Tate

1998-01-01

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

PubMed

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-18

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

NASA Astrophysics Data System (ADS)

Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

2015-02-01

Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

Effect of nano oxide layer on exchange bias and GMR in Mn-Ir-Pt based spin valve

NASA Astrophysics Data System (ADS)

Jeon, D. M.; Lee, J. P.; Lee, D. H.; Yoon, S. Y.; Kim, Y. S.; Suh, S. J.

2004-05-01

We have investigated the effect of nano oxide layers (NOLs), which were fabricated by a plasma oxidation of CoFe layer on the magnetic properties and magneto-resistance (MR) in a Mn-Ir-Pt based spin valve. The adjusted NOL could result in the high MR and the strong exchange coupling field ( Hex). From a high resolution electron microscopy analysis the oxide was about 1 nm. The strong reflectivity at the interface of a free and oxide capping layer should lead to the decrease of an interlayer coupling field, which could possibly improve the Hex.

Superconducting structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2003-04-01

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Superconducting Structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2005-09-13

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Steam assisted oxide growth on aluminium alloys using oxidative chemistries: Part I Microstructural investigation

NASA Astrophysics Data System (ADS)

Din, Rameez Ud; Piotrowska, Kamila; Gudla, Visweswara Chakravarthy; Jellesen, Morten Stendahl; Ambat, Rajan

2015-11-01

The surface treatment of aluminium alloys under steam containing KMnO4 and HNO3 resulted in the formation of an oxide layer having a thickness of up to 825 nm. The use of KMnO4 and HNO3 in the steam resulted in incorporation of the respective chemical species into the oxide layer. Steam treatment with solution containing HNO3 caused dissolution of Cu and Si from the intermetallic particles in the aluminium substrate. The growth rate of oxide layer was observed to be a function of MnO4- and NO3- ions present in the aqueous solution. The NO3- ions exhibit higher affinity towards the intermetallic particles resulting in poor coverage by the steam generated oxide layer compared to the coating formed using MnO4- ions. Further, increase in the concentration of NO3- ions in the solution retards precipitation of the steam generated aluminium hydroxide layer.

Formation of a Ge-rich Si1-x Ge x (x > 0.9) fin epitaxial layer condensed by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Ko, Dae-Hong

2017-11-01

We have selectively grown an epitaxial Si0.35Ge0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si1-x Ge x (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.

Wet oxidation of GeSi strained layers by rapid thermal processing

NASA Astrophysics Data System (ADS)

Nayak, D. K.; Kamjoo, K.; Park, J. S.; Woo, J. C. S.; Wang, K. L.

1990-07-01

A cold-wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1-x layers on Si substrates. The rate of oxidation of the GexSi1-x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge content in GexSi1-x layer. The oxidation rate of GexSi1-x appears to decrease with increasing oxidation time for the time-temperature cycles considered here. Employing high-frequency and quasi-static capacitance-voltage measurements, it is found that a fixed negative oxide charge density in the range of 1011- 1012/cm2 and the interface trap level density (in the mid-gap region) of about 1012/cm2 eV are present. Further, the density of this fixed interface charge at the SiO2/GeSi interface is found to increase with the Ge concentration in the commensurately grown GeSi layers.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Preparation of TiO(2) layers on cp-Ti and Ti6Al4V by thermal and anodic oxidation and by sol-gel coating techniques and their characterization.

PubMed

Velten, D; Biehl, V; Aubertin, F; Valeske, B; Possart, W; Breme, J

2002-01-01

The excellent biocompatibility of titanium and its alloys used, for example, for medical devices, is associated with the properties of their surface oxide. For a better understanding of the tissue reaction in contact with the oxide layer, knowledge of the chemical and physical properties of this layer is of increasing interest. In this study, titania films were produced on cp-Ti and Ti6Al4V substrates by thermal oxidation, anodic oxidation, and by the sol-gel process. The thickness and structure of the films produced under different conditions were determined by ellipsometry, infrared spectroscopy, and X-ray diffraction measurements. The corrosion properties of these layers were investigated by current density-potential curves under physiological conditions. The oxide layers produced on cp-Ti and Ti6Al4V by thermal oxidation consist of TiO(2) in the rutile structure. For the anodized samples the structure of TiO(2) is a mixture of amorphous phase and anatase. The structure of the coatings produced by the sol-gel process for a constant annealing time depends on the annealing temperature, and with increasing temperature successively amorphous, anatase, and rutile structure is observed. Compared to the uncoated, polished substrate with a natural oxide layer, the corrosion resistance of cp-Ti and Ti6Al4V is increased for the samples with an oxide layer thickness of about 100 nm, independent of the oxidation procedure. Copyright 2001 John Wiley & Sons, Inc.

Numerical Study on Recombination Efficiency at 4,4'-Bis(2,2'-diphenylvinyl)-1,1'-spirobiphenyl/Tris(8-quinolinolato)aluminium Interface in Organic Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Hwang, Young Wook; Kim, Kwang Sik; Won, Tae Young

2013-10-01

In this paper, we report our numerical study on the electrical and optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted for the purpose of reducing the interface barrier height between the cathode and the electron transport layer (ETL). We performed finite element method (FEM) simulation on OLEDs in order to understand the transport behavior of carriers, recombination kinetics, and emission property. Our model includes Poisson's equation, continuity equation to account for behavior of electrons and holes and exciton continuity/transfer equation to account for recombination of carriers. We employ the multilayer structure which consists of indium tin oxide (ITO); 2,2',7,7'-tetrakis(N,N-diphenylamine)-9,9'-spirobi-fluorene (S-TAD); 4,4'-bis(2,2'-diphenylvinyl)-1,1'-spirobiphenyl (S-DPVBi); tris(8-quinolinolato)aluminium (Alq3); calcium (Ca).

Surface Selective Oxidation of Sn-Added CMnSi TRIP Steel

NASA Astrophysics Data System (ADS)

Cho, Lawrence; Seo, Eun Jung; Jung, Geun Su; Suh, Dong Woo; De Cooman, Bruno C.

2016-04-01

The influence of the addition of Sn on the selective oxidation and the reactive wetting of CMnSi transformation-induced plasticity (TRIP) steels was studied by means of galvanizing simulator tests. A reference TRIP steel and TRIP steels containing Sn in the range of 0.05 to 1 wt pct were intercritically annealed at 1093 K (820 °C) in an N2+ 5 pct H2 gas atmosphere with a dew point of -60 °C. The thin-film oxides formed on the surface of the Sn-added CMnSi TRIP steel were investigated using transmission electron microscopy and 3-dimensional atom probe tomography. The addition of Sn (≥0.05 wt pct) changed the morphology of the xMnO·SiO2 surface oxides from a continuous film morphology to a lens-shaped island morphology. It also suppressed the formation of the Mn-rich oxides of MnO and 2MnO·SiO2. The changes in the morphology and chemistry of the surface oxides were clearly related to the surface segregation of Sn, which appeared to result in a decrease of the oxygen permeability at the surface. The formation of lens-shaped oxides improved the wettability of the CMnSi TRIP steel surface by the molten Zn. The improved wetting effect was attributed to an increased area fraction of the surface where the oxide layer was thinner. This enabled a direct, unhindered reaction between Fe and the Al in the liquid Zn and the formation of the inhibition layer in the initial stages of the hot dipping. The addition of a small amount of Sn was also found to decrease significantly the density of Zn-coating defects on CMnSi TRIP steel.

Effect of interfacial oxide layers on the current-voltage characteristics of Al-Si contacts

NASA Technical Reports Server (NTRS)

Porter, W. A.; Parker, D. L.

1976-01-01

Aluminum-silicon contacts with very thin interfacial oxide layers and various surface impurity concentrations are studied for both n and p-type silicon. To determine the surface impurity concentrations on p(+)-p and n(+)-n structures, a modified C-V technique was utilized. Effects of interfacial oxide layers and surface impurity concentrations on current-voltage characteristics are discussed based on the energy band diagrams from the conductance-voltage plots. The interfacial oxide and aluminum layer causes image contrasts on X-ray topographs.

Screening method for selecting semiconductor substrates having defects below a predetermined level in an oxide layer

DOEpatents

Warren, W.L.; Vanheusden, K.J.R.; Schwank, J.R.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.

1998-07-28

A method is disclosed for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e.g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer. 5 figs.

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

DOEpatents

Jankowski, A.F.; Makowiecki, D.M.; Rambach, G.D.; Randich, E.

1998-05-19

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated. 8 figs.

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

DOEpatents

Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

1999-01-01

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Hybrid deposition of thin film solid oxide fuel cells and electrolyzers

DOEpatents

Jankowski, Alan F.; Makowiecki, Daniel M.; Rambach, Glenn D.; Randich, Erik

1998-01-01

The use of vapor deposition techniques enables synthesis of the basic components of a solid oxide fuel cell (SOFC); namely, the electrolyte layer, the two electrodes, and the electrolyte-electrode interfaces. Such vapor deposition techniques provide solutions to each of the three critical steps of material synthesis to produce a thin film solid oxide fuel cell (TFSOFC). The electrolyte is formed by reactive deposition of essentially any ion conducting oxide, such as defect free, yttria stabilized zirconia (YSZ) by planar magnetron sputtering. The electrodes are formed from ceramic powders sputter coated with an appropriate metal and sintered to a porous compact. The electrolyte-electrode interface is formed by chemical vapor deposition of zirconia compounds onto the porous electrodes to provide a dense, smooth surface on which to continue the growth of the defect-free electrolyte, whereby a single fuel cell or multiple cells may be fabricated.

Reduction-oxidation Enabled Glass-ceramics to Stainless Steel Bonding Part II interfacial bonding analysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, Steve Xunhu

2015-09-01

Among glass-ceramic compositions modified with a variety of oxidants (AgO, FeO, NiO, PbO, SnO, CuO, CoO, MoO 3 and WO 3) only CuO and CoO doped glass-ceramics showed existence of bonding oxides through reduction-oxidation (redox) at the GC-SS interface. The CuO-modified glass-ceramics demonstrate the formation of a continuous layer of strong bonding Cr 2O 3 at the interface in low partial oxygen (PO 2) atmosphere. However, in a local reducing atmosphere, the CuO is preferentially reduced at the surface of glass-ceramic rather than the GC-SS interface for redox. The CoO-modified glass-ceramics demonstrate improved GC-SS bonding. But the low mobility ofmore » Co ++ ions in the GC limited the amount of CoO that can diffuse to and participate in redox at the interface.« less

Superparamagnetic Fe3O4 particles formed by oxidation of pyrite heated in an anoxic atmosphere

USGS Publications Warehouse

Thorpe, A.N.; Senftle, F.E.; Talley, R.; Hetherington, S.; Dulong, F.

1990-01-01

As a follow-up to previous gas analysis experiments in which pyrite was heated to 681 K in an anoxic (oxygen starved) atmosphere, the first oxidation product, FeSO4, was studied as a bulk material. No decomposition of FeSO4 to Fe3O4 was observed in the temperature range studied. The lack of decomposition of bulk FeSO4 to Fe3O4 suggests that FeS2 oxidizes directly to Fe3O4, or that FeSO4, FeS2 and O2 react together to form Fe3O4. Magnetic susceptibility and magnetization measurements, along with magnetic hysteresis curves, show that small particles of Fe3O4 form on the pyrite surface, rather than a continuous layer of bulk Fe3O4. A working model describing the oxidation steps is presented. ?? 1990.

Solid State Research.

DTIC Science & Technology

1982-11-22

48 Fabricated in Zone-Melting-Recrystallized Si Films on Si0 2-Coated Si Substrates V 4. MICROELECTRONICS 55 4.1 Charge-Coupled Devices: Time...OMCVD to the CLEFT (cleavage of lateral epitaxial films for transfer) process, a continuous epitaxial GaAs layer 3 Ym thick has been grown over a...complete-island-etch or local-oxidation-of-Si isolation, that were fabricated in zone-melting-recrystallized Si films on Si02-coated Si substrates. As

Continued development of abradable gas path seals. [for gas turbine engines

NASA Technical Reports Server (NTRS)

Shiembob, L. T.

1975-01-01

Major program objectives were the continued development of NiCrAlY feltmetal and honeycomb systems for knife edge seal applications in the 1144 to 1366 K temperature range, and to initiate abradable seal material evaluation for blade tip seal applications in the 1366 to 1589 K temperature range. Larger fiber size, higher density feltmetal showed greatly improved erosion resistance with a slight reduction in abradability compared to the baseline feltmetal. Pack aluminide coating of the honeycomb extended the oxidation resistance and slightly improved the abradability of this material. Evaluation through selected abradability, erosion and oxidation testing, and pertinent metallography led to selection of a plasma sprayed yttria stabilized zirconia (ZrO2)/CoCrAlY layered system as the system with the most potential to meet the 1589 K requirement for blade tip seals. This system demonstrated structural integrity, erosion resistance, and some degree of abradability.

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer

NASA Astrophysics Data System (ADS)

Vasin, Andriy V.; Ishikawa, Yukari; Shibata, Noriyoshi; Salonen, Jarno; Lehto, Vesa-Pekka

2007-05-01

A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

PubMed Central

Baiutti, Federico; Christiani, Georg

2014-01-01

Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

Insight into self-discharge of layered lithium-rich oxide cathode in carbonate-based electrolytes with and without additive

NASA Astrophysics Data System (ADS)

Li, Jianhui; Xing, Lidan; Zhang, Liping; Yu, Le; Fan, Weizhen; Xu, Mengqing; Li, Weishan

2016-08-01

Self-discharge behavior of layered lithium-rich oxide as cathode of lithium ion battery in a carbonated-based electrolyte is understood, and a simple boron-containing compound, trimethyl borate (TMB), is used as an electrolyte additive to suppress this self-discharge. It is found that layered lithium-rich oxide charged under 4.8 V in additive-free electrolyte suffers severe self-discharge and TMB is an effective electrolyte additive for self-discharge suppression. Physical characterizations from XRD, SEM, TEM, XPS and ICP-MS demonstrate that the crystal structure of the layered lithium-rich oxide collapses due to the chemical interaction between the charged oxide and electrolyte. When TMB is applied, the structural integrity of the oxide is maintained due to the protective cathode film generated from the preferential oxidation of TMB.

Multi-Physics Modeling of Molten Salt Transport in Solid Oxide Membrane (SOM) Electrolysis and Recycling of Magnesium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Powell, Adam; Pati, Soobhankar

2012-03-11

Solid Oxide Membrane (SOM) Electrolysis is a new energy-efficient zero-emissions process for producing high-purity magnesium and high-purity oxygen directly from industrial-grade MgO. SOM Recycling combines SOM electrolysis with electrorefining, continuously and efficiently producing high-purity magnesium from low-purity partially oxidized scrap. In both processes, electrolysis and/or electrorefining take place in the crucible, where raw material is continuously fed into the molten salt electrolyte, producing magnesium vapor at the cathode and oxygen at the inert anode inside the SOM. This paper describes a three-dimensional multi-physics finite-element model of ionic current, fluid flow driven by argon bubbling and thermal buoyancy, and heat andmore » mass transport in the crucible. The model predicts the effects of stirring on the anode boundary layer and its time scale of formation, and the effect of natural convection at the outer wall. MOxST has developed this model as a tool for scale-up design of these closely-related processes.« less

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2016-05-10

A device fabrication method includes: (1) providing a growth substrate including an oxide layer; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing fluid-assisted interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Low voltage solid-state lateral coloration electrochromic device

DOEpatents

Tracy, C. Edwin; Benson, David K.; Ruth, Marta R.

1987-01-01

A solid-state transition metal oxide device comprising a plurality of lay having a predisposed orientation including an electrochromic oxide layer. Conductive material including anode and cathode contacts is secured to the device. Coloration is actuated within the electrochromic oxide layer after the application of a predetermined potential between the contacts. The coloration action is adapted to sweep or dynamically extend across the length of the electrochromic oxide layer.

Partially Oxidized SnS2 Atomic Layers Achieving Efficient Visible-Light-Driven CO2 Reduction.

PubMed

Jiao, Xingchen; Li, Xiaodong; Jin, Xiuyu; Sun, Yongfu; Xu, Jiaqi; Liang, Liang; Ju, Huanxin; Zhu, Junfa; Pan, Yang; Yan, Wensheng; Lin, Yue; Xie, Yi

2017-12-13

Unraveling the role of surface oxide on affecting its native metal disulfide's CO 2 photoreduction remains a grand challenge. Herein, we initially construct metal disulfide atomic layers and hence deliberately create oxidized domains on their surfaces. As an example, SnS 2 atomic layers with different oxidation degrees are successfully synthesized. In situ Fourier transform infrared spectroscopy spectra disclose the COOH* radical is the main intermediate, whereas density-functional-theory calculations reveal the COOH* formation is the rate-limiting step. The locally oxidized domains could serve as the highly catalytically active sites, which not only benefit for charge-carrier separation kinetics, verified by surface photovoltage spectra, but also result in electron localization on Sn atoms near the O atoms, thus lowering the activation energy barrier through stabilizing the COOH* intermediates. As a result, the mildly oxidized SnS 2 atomic layers exhibit the carbon monoxide formation rate of 12.28 μmol g -1 h -1 , roughly 2.3 and 2.6 times higher than those of the poorly oxidized SnS 2 atomic layers and the SnS 2 atomic layers under visible-light illumination. This work uncovers atomic-level insights into the correlation between oxidized sulfides and CO 2 reduction property, paving a new way for obtaining high-efficiency CO 2 photoreduction performances.

Corrosion characteristics of Ni-base superalloys in high temperature steam with and without hydrogen

NASA Astrophysics Data System (ADS)

Kim, Donghoon; Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Yoon, Duk Joo

2013-10-01

The hot steam corrosion behavior of Alloy 617 and Haynes 230 were evaluated in corrosion tests performed at 900 °C in steam and steam + 20 vol.% H2 environments. Corrosion rates of Alloy 617 was faster than that of Haynes 230 at 900 °C in steam and steam + 20 vol.% H2 environments. When hydrogen was added to steam, the corrosion rate was accelerated because added hydrogen increased the concentration of Cr interstitial defects in the oxide layer. Isolated nodular MnTiO3 oxides were formed on the MnCr2O4/Cr2O3 oxide layer and sub-layer Cr2O3 was formed in steam and steam + 20 vol.% H2 for Alloy 617. On the other hand, a MnCr2O4 layer was formed on top of the Cr2O3 oxide layer for Haynes 230. The extensive sub-layer Cr2O3 formation resulted from the oxygen or hydroxide inward diffusion in such environments. When hydrogen was added, the initial surface oxide morphology was changed from a convex shape to platelets because of the accelerated diffusion of cations under the oxide layer.

In-Situ Observation of Nano-Oxide Formation in Magnetic Thin Films

NASA Astrophysics Data System (ADS)

McCallum, Andrew; Russek, Stephen

2004-03-01

Exposure of a metal surface in a spin valve structure to oxygen creates a nano-oxide layer, or NOL, on that surface. Inclusion of NOLs into spin valve structures has been shown by many researchers to lower the resistance and increase the giant magnetoresistance effect. Four point in-situ conductance measurements were made during the deposition and oxidation of Co layers. These measurements show an initial decrease in conductance followed by an increase in conductance, due to a specularity increase of at least 0.10. RHEED measurements taken simultaneously with conductance measurements show the formation an amorphous oxide while the specularity increases. With further exposure of oxygen to the surface a CoO structure with a (111) texture forms. Magnetoconductance measurements during the oxidation of the free layer of bottom pinned spin valves show increases in the GMR of the spin valves. Estimates of the change in specularity and Co layer thickness were determined from the change in conductance and the change in magnetoconductance. Also determined from the magnetoconductance measurements was an increase in the coercivity of the free layer with oxidation. Adding Co onto the oxide had a strong effect on the coercivity and coupling between free and pinned layers.

Self-assembly and continuous growth of hexagonal graphene flakes on liquid Cu

NASA Astrophysics Data System (ADS)

Cho, Seong-Yong; Kim, Min-Sik; Kim, Minsu; Kim, Ki-Ju; Kim, Hyun-Mi; Lee, Do-Joong; Lee, Sang-Hoon; Kim, Ki-Bum

2015-07-01

Graphene growth on liquid Cu has received great interest, owing to the self-assembly behavior of hexagonal graphene flakes with aligned orientation and to the possibility of forming a single grain of graphene through a commensurate growth of these graphene flakes. Here, we propose and demonstrate a two-step growth process which allows the formation of self-assembled, completely continuous graphene on liquid Cu. After the formation of full coverage on the liquid Cu, grain boundaries were revealed via selective hydrogen etching and the original grain boundaries were clearly resolved. This result indicates that, while the flakes self-assembled with the same orientation, there still remain structural defects, gaps and voids that were not resolved by optical microscopy or scanning electron microscopy. To overcome this limitation, the two-step growth process was employed, consisting of a sequential process of a normal single-layer graphene growth and self-assembly process with a low carbon flux, followed by the final stage of graphene growth at a high degree of supersaturation with a high carbon flux. Continuity of the flakes was verified via hydrogen etching and a NaCl-assisted oxidation process, as well as by measuring the electrical properties of the graphene grown by the two-step process. Two-step growth can provide a continuous graphene layer, but commensurate stitching should be further studied.Graphene growth on liquid Cu has received great interest, owing to the self-assembly behavior of hexagonal graphene flakes with aligned orientation and to the possibility of forming a single grain of graphene through a commensurate growth of these graphene flakes. Here, we propose and demonstrate a two-step growth process which allows the formation of self-assembled, completely continuous graphene on liquid Cu. After the formation of full coverage on the liquid Cu, grain boundaries were revealed via selective hydrogen etching and the original grain boundaries were clearly resolved. This result indicates that, while the flakes self-assembled with the same orientation, there still remain structural defects, gaps and voids that were not resolved by optical microscopy or scanning electron microscopy. To overcome this limitation, the two-step growth process was employed, consisting of a sequential process of a normal single-layer graphene growth and self-assembly process with a low carbon flux, followed by the final stage of graphene growth at a high degree of supersaturation with a high carbon flux. Continuity of the flakes was verified via hydrogen etching and a NaCl-assisted oxidation process, as well as by measuring the electrical properties of the graphene grown by the two-step process. Two-step growth can provide a continuous graphene layer, but commensurate stitching should be further studied. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr03352g

Efficient CH3NH3PbI3 perovskite/fullerene planar heterojunction hybrid solar cells with oxidized Ni/Au/Cu transparent electrode

NASA Astrophysics Data System (ADS)

Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

2018-02-01

We demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a thermally oxidized nickel/gold/copper (Ni/Au/Cu) trilayer transparent electrode. Oxidized Ni/Au/Cu is a high transparent layer and has less resistance than the oxidized Ni/Au layer. Like the oxidized Ni/Au layer, oxidized Ni and Cu in oxidized Ni/Au/Cu could perform as a hole transport layer of the perovskite-based SCs. It leads to improved perovskite SC performance on an open circuit voltage of 1.01 V, a short circuit current density of 14.36 mA/cm2, a fill factor of 76.7%, and a power conversion efficiency (η%) of 11.1%. The η% of perovskite SCs with oxidized Ni (10 nm)/Au (6 nm)/Cu (1 nm) improved by approximately 10% compared with that of perovskite SCs with oxidized Ni/Au.

Structural characterization of nano-oxide layers in PtMn based specular spin valves

NASA Astrophysics Data System (ADS)

Zhou, Min; Chen, Lifan; Diao, Zhitao; Park, Chang-Man; Huai, Yiming

2005-05-01

A systematic structure characterization of nano-oxide layers (NOLs) and specular spin valves using x-ray diffraction and high-resolution transmission electron microscopy (HRTEM) has been studied. High-angle x-ray diffraction data show almost identical fcc textures for both natural and plasma NOL spin-valves. Low-angle x-ray reflectivity spectrum shows more deteriorated Kiessig fringes at high incident angles for natural oxide sample, indicating rougher interfaces in natural oxidation than in plasma oxidation. Oxygen exposure plays an important role in NOLs process. Fabricating NOLs without any crystal structure degradation is critical to obtain high MR ratio. HRTEM reveals that oxide clusters mixing with insufficiently oxidized CoFe layers prevailed in natural NOL, and the natural oxidation was inhomogeneous. In contrast, plasma NOL has a thinner, more homogeneously oxidized CoFe layers with sharp interfaces. In plasma NOLs, the structures still maintain CoFe crystal structure. The structures and magnetic correlation of the NOL specular spin valves are discussed.

Multilayer Article Characterized by Low Coefficient of Thermal Expansion Outer Layer

NASA Technical Reports Server (NTRS)

Lee, Kang N. (Inventor)

2004-01-01

A multilayer article comprises a substrate comprising a ceramic or a silicon-containing metal alloy. The ceramic is a Si-containing ceramic or an oxide ceramic with or without silicon. An outer layer overlies the substrate and at least one intermediate layer is located between the outer layer and thc substrate. An optional bond layer is disposed between thc 1 least one intermediate layer and thc substrate. The at least one intermediate layer may comprise an optional chemical barrier layer adjacent the outer layer, a mullite-containing layer and an optional chemical barrier layer adjacent to the bond layer or substrate. The outer layer comprises a compound having a low coefficient of thermal expansion selected from one of the following systems: rare earth (RE) silicates; at least one of hafnia and hafnia-containing composite oxides; zirconia-containing composite oxides and combinations thereof.

Structural characterization of terrestrial microbial Mn oxides from Pinal Creek, AZ

USGS Publications Warehouse

Bargar, J.R.; Fuller, C.C.; Marcus, M.A.; Brearley, A.J.; Perez De la Rosa, M.; Webb, S.M.; Caldwell, W.A.

2009-01-01

The microbial catalysis of Mn(II) oxidation is believed to be a dominant source of abundant sorption- and redox-active Mn oxides in marine, freshwater, and subsurface aquatic environments. In spite of their importance, environmental oxides of known biogenic origin have generally not been characterized in detail from a structural perspective. Hyporheic zone Mn oxide grain coatings at Pinal Creek, Arizona, a metals-contaminated stream, have been identified as being dominantly microbial in origin and are well studied from bulk chemistry and contaminant hydrology perspectives. This site thus presents an excellent opportunity to study the structures of terrestrial microbial Mn oxides in detail. XRD and EXAFS measurements performed in this study indicate that the hydrated Pinal Creek Mn oxide grain coatings are layer-type Mn oxides with dominantly hexagonal or pseudo-hexagonal layer symmetry. XRD and TEM measurements suggest the oxides to be nanoparticulate plates with average dimensions on the order of 11 nm thick ?? 35 nm diameter, but with individual particles exhibiting thickness as small as a single layer and sheets as wide as 500 nm. The hydrated oxides exhibit a 10-?? basal-plane spacing and turbostratic disorder. EXAFS analyses suggest the oxides contain layer Mn(IV) site vacancy defects, and layer Mn(III) is inferred to be present, as deduced from Jahn-Teller distortion of the local structure. The physical geometry and structural details of the coatings suggest formation within microbial biofilms. The biogenic Mn oxides are stable with respect to transformation into thermodynamically more stable phases over a time scale of at least 5 months. The nanoparticulate layered structural motif, also observed in pure culture laboratory studies, appears to be characteristic of biogenic Mn oxides and may explain the common occurrence of this mineral habit in soils and sediments. ?? 2008 Elsevier Ltd.

Design and fabrication of a reflection far ultraviolet polarizer and retarder

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Zukic, Muamer; Wilson, Michele M.; Torr, Douglas G.

1993-01-01

New methods have been developed for the design of a far ultraviolet multilayer reflection polarizer and retarder. A MgF2/Al/MgF2 three-layer structure deposited on a thick opaque Al film (substrate) is used for the design of polarizers and retarders. The induced transmission and absorption method is used for the design of a polarizer and layer-by-layer electric field calculation method is used for the design of a quarterwave retarder. In order to fabricate these designs in a conventional high vacuum chamber, we have to minimize the oxidation of the Al layers and somehow characterize the oxidized layer. X-ray photoelectron spectroscopy is used to investigate the amount and profile of oxidation. Depth profiling results and a seven layer oxidation model are presented.

Control of the Structure of Diffusion Layer in Carbon Steels Under Nitriding with Preliminary Deposition of Copper Oxide Catalytic Films

NASA Astrophysics Data System (ADS)

Petrova, L. G.; Aleksandrov, V. A.; Malakhov, A. Yu.

2017-07-01

The effect of thin films of copper oxide deposited before nitriding on the phase composition and the kinetics of growth of diffusion layers in carbon steels is considered. The process of formation of an oxide film involves chemical reduction of pure copper on the surface of steel specimens from a salt solution and subsequent oxidation under air heating. The oxide film exerts a catalytic action in nitriding of low- and medium-carbon steels, which consists in accelerated growth of the diffusion layer, the nitride zone in the first turn. The kinetics of the nitriding process and the phase composition of the layer are controlled by the thickness of the copper oxide precursor, i.e., the deposited copper film.

Preliminary study of a solar selective coating system using black cobalt oxide for high temperature solar collectors

NASA Technical Reports Server (NTRS)

Mcdonald, G.

1980-01-01

Black cobalt oxide coatings (high solar absorptance layer) were deposited on thin layers of silver or gold (low emittance layer) which had been previously deposited on oxidized (diffusion barrier layer) stainless steel substrates. The reflectance properties of these coatings were measured at various thicknesses of cobalt for integrated values of the solar and infrared spectrum. The values of absorptance and emittance were calculated from the measured reflectance values, before and after exposure in air at 650 C for approximately 1000 hours. Absorptance and emittance were interdependent functions of the weight of cobalt oxide. Also, these cobalt oxide/noble metal/oxide diffusion barrier coatings have absorptances greater than 0.90 and emittances of approximately 0.20 even after about 1000 hours at 650 C.

Solid oxide fuel cell operable over wide temperature range

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

2001-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Interfacial material for solid oxide fuel cell

DOEpatents

Baozhen, Li; Ruka, Roswell J.; Singhal, Subhash C.

1999-01-01

Solid oxide fuel cells having improved low-temperature operation are disclosed. In one embodiment, an interfacial layer of terbia-stabilized zirconia is located between the air electrode and electrolyte of the solid oxide fuel cell. The interfacial layer provides a barrier which controls interaction between the air electrode and electrolyte. The interfacial layer also reduces polarization loss through the reduction of the air electrode/electrolyte interfacial electrical resistance. In another embodiment, the solid oxide fuel cell comprises a scandia-stabilized zirconia electrolyte having high electrical conductivity. The scandia-stabilized zirconia electrolyte may be provided as a very thin layer in order to reduce resistance. The scandia-stabilized electrolyte is preferably used in combination with the terbia-stabilized interfacial layer. The solid oxide fuel cells are operable over wider temperature ranges and wider temperature gradients in comparison with conventional fuel cells.

Interfacial layers in high-temperature-oxidized NiCrAl

NASA Technical Reports Server (NTRS)

Larson, L. A.; Browning, R.; Poppa, H.; Smialek, J.

1983-01-01

The utility of Auger electron spectroscopy combined with ball cratering for depth analysis of oxide and diffusion layers produced in a Ni-14Cr-24Al alloy by oxidation in air at 1180 C for 25 hr is demonstrated. During postoxidation cooling, the oxide layers formed by this alloy spalled profusely. The remaining very thin oxide was primarily Cr2O3 with a trace of Ni. The underlying metal substrate exhibited gamma/gamma-prime and beta phases with a metallic interfacial layer which was similar to the bulk gamma/gamma-prime phase but slightly enriched in Cr and Al. These data are compared to electron microprobe results from a nominally identical alloy. The diffusion layer thickness is modelled with a simple mass balance equation and compared to recent results on the diffusion process in NiCrAl alloys.

Formation of crack-free nanoporous tin oxide layers via simple one-step anodic oxidation in NaOH at low applied voltages

NASA Astrophysics Data System (ADS)

Zaraska, Leszek; Gilek, Dominika; Gawlak, Karolina; Jaskuła, Marian; Sulka, Grzegorz D.

2016-12-01

A simple anodic oxidation of metallic tin in fluoride-free alkaline electrolyte at low potentials was proposed as a new and effective strategy for fabrication of crack-free nanoporous tin oxide layers. A low-purity Sn foil (98.8%) was used as a starting material, and a series of anodizations were performed in 1 M NaOH at different conditions such as anodizing potential, and duration of the process. It was proved for the first time that nanostructured tin oxides with ultra-small nanochannels having diameters of <15 nm can be synthesized by simple anodization of metallic tin at a potential of 2 V in 1 M NaOH electrolyte. Increasing anodizing potential to 3 and 4 V allowed for formation of tin oxide layers with much larger pores (40-50 nm in diameter) which were still free from internal cracks and transversal pores. Applying such low potentials significantly reduces the oxide growth rate and suppresses vigorous oxygen evolution at the anode. As a result mechanical deterioration of the oxide structure is prevented while strongly alkaline electrolyte is responsible for formation of the porous layer with completely open pores even at such low potentials. On the contrary, when anodization was carried out at potentials of 5 and 6 V, much faster formation of anodic layer, accompanied by vigorous oxygen gas formation, was observed. In consequence, as grown oxide layers exhibited typical cracked or even stacked internal structure. Finally, we demonstrated for the first time that nanoporous tin oxide layers with segments of different channel sizes can be successfully obtained by simple altering potential during anodization.

Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy

NASA Astrophysics Data System (ADS)

Aetukuri, Nagaphani B.; Gray, Alexander X.; Drouard, Marc; Cossale, Matteo; Gao, Li; Reid, Alexander H.; Kukreja, Roopali; Ohldag, Hendrik; Jenkins, Catherine A.; Arenholz, Elke; Roche, Kevin P.; Dürr, Hermann A.; Samant, Mahesh G.; Parkin, Stuart S. P.

2013-10-01

External control of the conductivity of correlated oxides is one of the most promising schemes for realizing energy-efficient electronic devices. Vanadium dioxide (VO2), an archetypal correlated oxide compound, undergoes a temperature-driven metal-insulator transition near room temperature with a concomitant change in crystal symmetry. Here, we show that the metal-insulator transition temperature of thin VO2(001) films can be changed continuously from ~285 to ~345K by varying the thickness of the RuO2 buffer layer (resulting in different epitaxial strains). Using strain-, polarization- and temperature-dependent X-ray absorption spectroscopy, in combination with X-ray diffraction and electronic transport measurements, we demonstrate that the transition temperature and the structural distortion across the transition depend on the orbital occupancy in the metallic state. Our findings open up the possibility of controlling the conductivity in atomically thin VO2 layers by manipulating the orbital occupancy by, for example, heterostructural engineering.

Environmentally-assisted technique for transferring devices onto non-conventional substrates

DOEpatents

Lee, Chi-Hwan; Kim, Dong Rip; Zheng, Xiaolin

2014-08-26

A device fabrication method includes: (1) providing a growth substrate including a base and an oxide layer disposed over the base; (2) forming a metal layer over the oxide layer; (3) forming a stack of device layers over the metal layer; (4) performing interfacial debonding of the metal layer to separate the stack of device layers and the metal layer from the growth substrate; and (5) affixing the stack of device layers to a target substrate.

Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study

NASA Astrophysics Data System (ADS)

Ahamad Mohiddon, Md.; Lakshun Naidu, K.; Ghanashyam Krishna, M.; Dalba, G.; Ahmed, S. I.; Rocca, F.

2014-01-01

The interaction at the interface between chromium and amorphous Silicon (a-Si) films in the presence of a sandwich layer of chromium oxide is investigated using X-ray absorption fine structure (XAFS) spectroscopy. The oxidized interface was created, in situ, prior to the deposition of a 400 nm tick a-Si layer over a 50 nm tick Cr layer. The entire stack of substrate/metallic Cr/Cr2O3/a-Si was then annealed at temperatures from 300 up to 700 °C. Analysis of the near edge and extended regions of each XAFS spectrum shows that only a small fraction of Cr is able to diffuse through the oxide layer up to 500 °C, while the remaining fraction is buried under the oxide layer in the form of metallic Cr. At higher temperatures, diffusion through the oxide layer is enhanced and the diffused metallic Cr reacts with a-Si to form CrSi2. At 700 °C, the film contains Cr2O3 and CrSi2 without evidence of unreacted metallic Cr. The activation energy and diffusion coefficient of Cr are quantitatively determined in the two temperature regions, one where the oxide acts as diffusion barrier and another where it is transparent to Cr diffusion. It is thus demonstrated that chromium oxide can be used as a diffusion barrier to prevent metal diffusion into a-Si.

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

NASA Astrophysics Data System (ADS)

Mishima, K.; Murakami, H.; Ohta, A.; Sahari, S. K.; Fujioka, T.; Higashi, S.; Miyazaki, S.

2013-03-01

Atomic layer deposition (ALD) and Layer-by-Layer deposition of Ta-oxide films on Ge(100) with using tris (tert-butoxy) (tert-butylimido) tantalum have been studied systematically. From the analysis of the chemical bonding features of the interface between TaOx and Ge(100) using x-ray photoelectron spectroscopy (XPS), Ge atom diffusion into the Ta oxide layer and resultant TaGexOy formation during deposition at temperatures higher than 200°C were confirmed. Also, we have demonstrated that nanometer-thick deposition of Tantalum oxide as an interfacial layer effectively suppresses the formation of GeOx in the HfO2 ALD on Ge. By the combination of TaOx pre-deposition on Ge(100) and subsequent ALD of HfO2, a capacitance equivalent thickness (CET) of 1.35 nm and relative dielectric constant of 23 were achieved.

Pd/Ni-WO3 anodic double layer gasochromic device

DOEpatents

Lee, Se-Hee; Tracy, C. Edwin; Pitts, J. Roland; Liu, Ping

2004-04-20

An anodic double layer gasochromic sensor structure for optical detection of hydrogen in improved response time and with improved optical absorption real time constants, comprising: a glass substrate; a tungsten-doped nickel oxide layer coated on the glass substrate; and a palladium layer coated on the tungsten-doped nickel oxide layer.

Intermediate coating layer for high temperature rubbing seals for rotary regenerators

DOEpatents

Schienle, James L.; Strangman, Thomas E.

1995-01-01

A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. Because of the YSZ intermediate layer, the coating is thermodynamically stable and resists swelling at high temperatures.

Ceramic with preferential oxygen reactive layer

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2001-01-01

An article comprises a silicon-containing substrate and an external environmental/thermal barrier coating. The external environmental/thermal barrier coating is permeable to diffusion of an environmental oxidant and the silicon-containing substrate is oxidizable by reaction with oxidant to form at least one gaseous product. The article comprises an intermediate layer/coating between the silicon-containing substrate and the environmental/thermal barrier coating that is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant. A method of forming an article, comprises forming a silicon-based substrate that is oxidizable by reaction with oxidant to at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Method for producing chemical energy

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2004-09-21

Fluoroalkylsilane-coated metal particles having a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer are prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Energetic powder

DOEpatents

Jorgensen, Betty S.; Danen, Wayne C.

2003-12-23

Fluoroalkylsilane-coated metal particles. The particles have a central metal core, a buffer layer surrounding the core, and a fluoroalkylsilane layer attached to the buffer layer. The particles may be prepared by combining a chemically reactive fluoroalkylsilane compound with an oxide coated metal particle having a hydroxylated surface. The resulting fluoroalkylsilane layer that coats the particles provides them with excellent resistance to aging. The particles can be blended with oxidant particles to form energetic powder that releases chemical energy when the buffer layer is physically disrupted so that the reductant metal core can react with the oxidant.

Elevated temperature tribology of cobalt and tantalum-based alloys

DOE PAGES

Scharf, T. W.; Prasad, S. V.; Kotula, P. G.; ...

2014-12-31

This paper describes the friction and wear behavior of a Co–Cr alloy sliding on a Ta–W alloy. Measurements were performed in a pin-on-flat configuration with a hemispherically tipped Co-base alloy pin sliding on a Ta–W alloy flat from ambient to 430°C. Focused ion beam-scanning electron microscopy (FIB-SEM) and cross-sectional transmission electron microscopy (TEM) were used to identify the friction-induced changes to the chemistry and crystal structure in the subsurface regions of wear tracks. During sliding contact, transfer of material varied as a function of the test temperature, either from pin-to-flat, flat-to-pin, or both, resulting in either wear loss and/or volumemore » gain. Friction coefficients (μ) and wear rates also varied as a function of test temperature. The lowest friction coefficient (μ=0.25) and wear rate (1×10 –4 mm 3/N•m) were observed at 430°C in argon atmosphere. This was attributed to the formation of a Co-base metal oxide layer (glaze), predominantly (Co, Cr)O with Rocksalt crystal structure, on the pin surface. Part of this oxide film transferred to the wear track on Ta–W, providing a self-mated oxide-on-oxide contact. Once the oxide glaze is formed, it is able to provide friction reduction for the entire temperature range of this study, ambient to 430°C. Furthermore, the results of this study indicate that glazing the surfaces of Haynes alloys with continuous layers of cobalt chrome oxide prior to wear could protect the cladded surfaces from damage.« less

Elevated temperature tribology of cobalt and tantalum-based alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scharf, T. W.; Prasad, S. V.; Kotula, P. G.

This paper describes the friction and wear behavior of a Co–Cr alloy sliding on a Ta–W alloy. Measurements were performed in a pin-on-flat configuration with a hemispherically tipped Co-base alloy pin sliding on a Ta–W alloy flat from ambient to 430°C. Focused ion beam-scanning electron microscopy (FIB-SEM) and cross-sectional transmission electron microscopy (TEM) were used to identify the friction-induced changes to the chemistry and crystal structure in the subsurface regions of wear tracks. During sliding contact, transfer of material varied as a function of the test temperature, either from pin-to-flat, flat-to-pin, or both, resulting in either wear loss and/or volumemore » gain. Friction coefficients (μ) and wear rates also varied as a function of test temperature. The lowest friction coefficient (μ=0.25) and wear rate (1×10 –4 mm 3/N•m) were observed at 430°C in argon atmosphere. This was attributed to the formation of a Co-base metal oxide layer (glaze), predominantly (Co, Cr)O with Rocksalt crystal structure, on the pin surface. Part of this oxide film transferred to the wear track on Ta–W, providing a self-mated oxide-on-oxide contact. Once the oxide glaze is formed, it is able to provide friction reduction for the entire temperature range of this study, ambient to 430°C. Furthermore, the results of this study indicate that glazing the surfaces of Haynes alloys with continuous layers of cobalt chrome oxide prior to wear could protect the cladded surfaces from damage.« less

Experimental and Modeling Studies on the Microstructures and Properties of Oxidized Aluminum Nitride Ceramic Substrates

NASA Astrophysics Data System (ADS)

Cao, Ye; Xu, Haixian; Zhan, Jun; Zhang, Hao; Wei, Xin; Wang, Jianmin; Cui, Song; Tang, Wenming

2018-05-01

Oxidation of aluminum nitride (AlN) ceramic substrates doped with 2 wt.% Y2O3 was performed in air at temperatures ranging from 1000 to 1300 °C for various lengths of time. Microstructure, bending strength, and thermal conductivity of the oxidized AlN substrates were studied experimentally and also via mathematical models. The results show that the oxide layer formed on the AlN substrates is composed of α-Al2O3 nanocrystallines and interconnected micropores. Longitudinal and transverse cracks are induced in the oxide layer under tensile and shear stresses, respectively. Intergranular oxidation of the AlN grains close to the oxide layer/AlN interface also occurs, leading to widening and cracking of the AlN grain boundaries. These processes result in the monotonous degradation of bending strength and thermal conductivity of the oxidized AlN substrates. Two mathematic models concerning these properties of the oxidized AlN substrates versus the oxide layer thickness were put forward. They fit well with the experimental results.

Oxidation Studies of Cu12Sb3.9Bi0.1S10Se3 Tetrahedrite

NASA Astrophysics Data System (ADS)

Gonçalves, António P.; Lopes, Elsa B.; Montemor, Maria F.; Monnier, Judith; Lenoir, Bertrand

2018-02-01

Tetrahedrites are widespread minerals with general formula Cu10 M 2Sb4S13 (M = Cu, Mn, Fe, Co, Ni, Zn). Their thermoelectric properties can be tuned through proper doping and reach zT values as high as 1, being considered promising low-cost thermoelectric materials. However, for practical application in thermoelectric devices, it is necessary to establish their ability to operate for long periods under working temperatures and atmospheres. We present herein studies of oxidation in air of Cu12Sb3.9Bi0.1S10Se3 tetrahedrite at four different temperatures between 230°C and 375°C, together with preliminary corrosion studies in aggressive NaCl electrolyte. Surface oxidation already occurs at the lower studied temperatures, but a strong decrease of the oxidation rate is observed for materials treated at intermediate temperature (275°C), where a continuous surface layer of Cu2-x S forms, pointing to a protective effect of this layer that could be applied in devices operating at such temperatures. For the material treated at higher temperatures (350°C and 375°C), no tetrahedrite phases were seen after 1500 h, which can be related to the (tetrahedrite + chalcostibite + antimony → skinnerite) reaction that occurs above 280°C. Corrosion studies indicated that increasing the oxidation temperature unfortunately leads to a decrease of the corrosion resistance of tetrahedrite-based phases.

Transport rates of radiolytic substances into Europa's ocean: implications for the potential origin and maintenance of life.

PubMed

Greenberg, Richard

2010-04-01

Abstract Bombardment of the surface of Europa produces oxidants and other biologically useful substances, but they can only contribute to the habitability of the ocean if they are delivered down through the icy crust. Previous estimates of the thickness of the oxygenated layer of ice assumed that impact gardening is the dominant factor and concluded that the ocean may be habitable if the oxidant delivery time, via undefined mechanisms, is sufficiently short. Consideration of the types of processes that continually resurface Europa suggests that the oxygenated layer is thicker than approximately 300 m, far greater than the few meters indicated by impact gardening alone, and possibly includes the entire ice crust. The estimated delivery rate to the ocean is such that the oxygen levels could now be high enough to support macrofauna; and, at approximately 3 x 10(11) mol/yr of oxygen, it could maintain 3 million tons of macrofauna, assuming respiration rates similar to terrestrial marine organisms. These values are independent of any additional contributions due to possible photosynthesis. Initial formation of life would be difficult with so much oxygen, but the start of oxidant delivery into the ocean would have been delayed by 1-2 billion years while the crust became loaded with oxidants. In the ocean, this delay would have allowed time for prebiotic assemblages and anaerobic biological development prior to the increasing oxidant concentration to otherwise toxic levels.

Influence of oxide microstructure on corrosion behavior of zirconium-based model alloys

NASA Astrophysics Data System (ADS)

Silva, Marcelo Jose Gomes Da

The extensive utilization of zirconium-based alloys in fuel cladding and other reactor internal components in the nuclear power industry has led to the continuous improvement of these alloys. At the present moment, demands for better performing nuclear fuel cladding materials are increasing. Also, new reactor designs have been proposed that would require the materials to withstand even more rigorous conditions. One of the factors that limit s fuel cladding utilization in nuclear reactors is uniform corrosion and the consequent hydriding of the fuel. In an attempt to develop mechanistic understanding of the role of alloying elements in the growth of a stable protective oxide, a series of model zirconium-based alloys was prepared (Zr-xFe-yCr, Zr-xCu-yMo, Zr-xNb-ySn, for various x and y, pure Zr and Zircaloy-4) and examined with advanced characterization techniques. The alloys were corrosion tested in autoclaves under three different conditions: 360°C water, 500°C steam and 500°C supercritical water in excess of 400 days. These autoclave testing conditions simulate nuclear reactor environment for both current designs (360°C water) and the new supercritical water reactor (500°C steam and 500°C supercritical water) proposed by the generation-IV initiative. The oxide films formed were systematically examined at the Advanced Photon Source using microbeam synchrotron radiation diffraction and fluorescence of cross-sectional samples to determine the oxide phases present and their crystallographic texture as a function of distance from the metal/oxide interface. Also, the overall texture of the oxide layers was investigated using synchrotron radiation diffraction in frontal geometry. The corrosion kinetics is a function of the alloy system and showed a wide range of behaviors, from immediately unstable oxide growth to stable behavior. The corrosion weight gains from testing at high temperature are a factor of five higher than those measured at 360°C but the protectiveness ranking of the alloys is similar. Measured pole figures from different oxides in different corrosion regimes showed that monoclinic oxides grow in slightly distinct directions: protective oxides grow along the (-904)m pole, whether non-protective oxides grow along or close to the (-302)m pole. The angle in between these two directions ((-904)m and (-302)m) is about 6°. Microbeam synchrotron radiation diffraction and fluorescence was performed in the oxide layers and systematic differences are observed in protective and non-protective oxides, both near the oxide/metal interface and in the bulk of the oxide layers. The non-protective oxide interfaces show a smooth transition from metal to oxide with metal diffraction peaks disappearing as the monoclinic oxide peaks appear. In contrast, in a protective oxide, a complex structure near the oxide/metal interface was seen, showing peaks from Zr 3O suboxide and a highly oriented tetragonal oxide phase with specific orientation relationships with the monoclinic oxide and the base metal. The highly oriented tetragonal phase, only present in protective oxides, is believed to be a precursor to the formation of monoclinic oxide found in the bulk of the oxide layer. This plane may promote stable growth by causing the oxide to form in a manner that maximizes occupation of the substrate surface and minimizes stress accumulation, leading to more stable oxide growth. The association seen in this work of the precursor oxide phase with protective oxides and its orientation relationship with the monoclinic oxide, combined with the difference in oxide growth direction seen between protective and non-protective oxides, is interpreted as evidence that this phase allows a more properly oriented oxide to grow, in a way that minimizes stress accumulation and therefore delays the oxide transition to larger oxide thicknesses.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Preparation of novel layer-stack hexagonal CdO micro-rods by a pre-oxidation and subsequent evaporation process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Kun, E-mail: kpeng@hnu.edu.cn; Hunan Province Key Laboratory for Spray Deposition Technology and Application, Hunan University, Changsha 410082; Jiang, Pan

2014-12-15

Graphical abstract: Layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared. - Highlights: • Novel hexagonal layer-stack structure CdO micro-rods were synthesized by a thermal evaporation method. • The pre-oxidation, vapor pressure and substrate nature play a key role on the formation of CdO rods. • The formation mechanism of CdO micro-rods was explained. - Abstract: Novel layer-stack hexagonal cadmium oxide (CdO) micro-rods were prepared by pre-oxidizing Cd granules and subsequent thermal oxidation under normal atmospheric pressure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were performed to characterize the phase structure and microstructure. The pre-oxidation process, vapor pressure and substratemore » nature were the key factors for the formation of CdO micro-rods. The diameter of micro-rod and surface rough increased with increasing of thermal evaporation temperature, the length of micro-rod increased with the increasing of evaporation time. The formation of hexagonal layer-stack structure was explained by a vapor–solid mechanism.« less

Streaming potential method for characterizing interaction of electrical double layers between rice roots and Fe/Al oxide-coated quartz in situ.

PubMed

Liu, Zhao-Dong; Wang, Hai-Cui; Li, Jiu-Yu; Xu, Ren-Kou

2017-10-01

The interaction between rice roots and Fe/Al oxide-coated quartz was investigated through zeta potential measurements and column leaching experiments in present study. The zeta potentials of rice roots, Fe/Al oxide-coated quartz, and the binary systems containing rice roots and Fe/Al oxide-coated quartz were measured by a specially constructed streaming potential apparatus. The interactions between rice roots and Fe/Al oxide-coated quartz particles were evaluated/deduced based on the differences of zeta potentials between the binary systems and the single system of rice roots. The zeta potentials of the binary systems moved in positive directions compared with that of rice roots, suggesting that there were overlapping of diffuse layers of electric double layers on positively charged Fe/Al oxide-coated quartz and negatively charged rice roots and neutralization of positive charge on Fe/Al oxide-coated quartz with negative charge on rice roots. The greater amount of positive charges on Al oxide led to the stronger interaction of Al oxide-coated quartz with rice roots and the more shift of zeta potential compared with Fe oxide. The overlapping of diffuse layers on Fe/Al oxide-coated quartz and rice roots was confirmed by column leaching experiments. The greater overlapping of diffuse layers on Al oxide and rice roots led to more simultaneous adsorptions of K + and NO 3 - and greater reduction in leachate electric conductivity when the column containing Al oxide-coated quartz and rice roots was leached with KNO 3 solution, compared with the columns containing rice roots and Fe oxide-coated quartz or quartz. When the KNO 3 solution was replaced with deionized water to flush the columns, more K + and NO 3 - were desorbed from the binary system containing Al oxide-coated quartz and rice roots than from other two binary systems, suggesting that the stronger electrostatic interaction between Al oxide and rice roots promoted the desorption of K + and NO 3 - from the binary system and enhanced overlapping of diffuse layers on these oppositely charged surfaces compared with other two binary systems. In conclusion, the overlapping of diffuse layers occurred between positively charged Fe/Al oxides and rice roots, which led to neutralization of opposite charge and affected adsorption and desorption of ions onto and from the charged surfaces of Fe/Al oxides and rice roots.

Local oxidation using scanning probe microscope for fabricating magnetic nanostructures.

PubMed

Takemura, Yasushi

2010-07-01

Local oxidation technique using atomic force microscope (AFM) was studied. The local oxidation of ferromagnetic metal thin films was successfully performed by AFM under both contact and dynamic force modes. Modification of magnetic and electrical properties of magnetic devices fabricated by the AFM oxidation was achieved. Capped oxide layers deposited on the ferromagnetic metal films are advantageous for stable oxidation due to hydrophilic surface of oxide. The oxide layer is also expected to prevent magnetic devices from degradation by oxidation of ferromagnetic metal. As for modification of magnetic property, the isolated region of CoFe layer formed by nanowires of CoFe-oxide exhibited peculiar characteristic attributed to the isolated magnetization property and pinning of domain wall during magnetization reversal. Temperature dependence of current-voltage characteristic of the planar-type tunnel junction consisting of NiFe/NiFe-oxide/NiFe indicated that the observed current was dominated by intrinsic tunneling current at the oxide barrier.

Evaluation of Graphene/WO3 and Graphene/CeO x Structures as Electrodes for Supercapacitor Applications

NASA Astrophysics Data System (ADS)

Chaitoglou, Stefanos; Amade, Roger; Bertran, Enric

2017-12-01

The combination of graphene with transition metal oxides can result in very promising hybrid materials for use in energy storage applications thanks to its intriguing properties, i.e., highly tunable surface area, outstanding electrical conductivity, good chemical stability, and excellent mechanical behavior. In the present work, we evaluate the performance of graphene/metal oxide (WO3 and CeO x ) layered structures as potential electrodes in supercapacitor applications. Graphene layers were grown by chemical vapor deposition (CVD) on copper substrates. Single and layer-by-layer graphene stacks were fabricated combining graphene transfer techniques and metal oxides grown by magnetron sputtering. The electrochemical properties of the samples were analyzed and the results suggest an improvement in the performance of the device with the increase in the number of graphene layers. Furthermore, deposition of transition metal oxides within the stack of graphene layers further improves the areal capacitance of the device up to 4.55 mF/cm2, for the case of a three-layer stack. Such high values are interpreted as a result of the copper oxide grown between the copper substrate and the graphene layer. The electrodes present good stability for the first 850 cycles before degradation.

Development of Pinhole-Free Amorphous Aluminum Oxide Protective Layers for Biomedical Device Applications

PubMed Central

Litvinov, Julia; Wang, Yi-Ju; George, Jinnie; Chinwangso, Pawilai; Brankovic, Stanko; Willson, Richard C.; Litvinov, Dmitri

2013-01-01

This paper describes synthesis of ultrathin pinhole-free insulating aluminum oxide layers for electronic device protection in corrosive liquid environments, such as phosphate buffered saline (PBS) or clinical fluids, to enable emerging biomedical applications such as biomolecular sensors. A pinhole-free 25-nm thick amorphous aluminum oxide layer has been achieved using ultra-high vacuum DC magnetron reactive sputtering of aluminum in oxygen/argon plasma followed by oxygen plasma post-processing. Deposition parameters were optimized to achieve the best corrosion protection of lithographically defined device structures. Electrochemical deposition of copper through the aluminum oxide layers was used to detect the presence (or absence) of pinholes. FTIR, XPS, and spectroscopic ellipsometry were used to characterize the material properties of the protective layers. Electrical resistance of the copper device structures protected by the aluminum oxide layers and exposed to a PBS solution was used as a metric to evaluate the long-term stability of these device structures. PMID:23682201

Immobilization of bacterial S-layer proteins from Caulobacter crescentus on iron oxide-based nanocomposite: synthesis and spectroscopic characterization of zincite-coated Fe₂O₃ nanoparticles.

PubMed

Habibi, Neda

2014-05-05

Zinc oxide was coated on Fe2O3 nanoparticles using sol-gel spin-coating. Caulobacter crescentus have a crystalline surface layer (S-layer), which consist of one protein or glycoprotein species. The immobilization of bacterial S-layers obtained from C. crescentus on zincite-coated nanoparticles of iron oxide was investigated. The SDS PAGE results of S-layers isolated from C. crescentus showed the weight of 50 KDa. Nanoparticles of the Fe2O3 and zinc oxide were synthesized by a sol-gel technique. Fe2O3 nanoparticles with an average size of 50 nm were successfully prepared by the proper deposition of zinc oxide onto iron oxide nanoparticles surface annealed at 450 °C. The samples were characterized by field-emission scanning electron microscope (FESEM), atomic force microscopy (AFM), powder X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FT-IR). Copyright © 2014 Elsevier B.V. All rights reserved.

Bulk-heterojunction organic solar cells sandwiched by solution processed molybdenum oxide and titania nanosheet layers

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Goto, Yoshinori; Fukuda, Katsutoshi

2014-02-01

The contributions of ultrathin titania nanosheet (TN) crystallites were studied in both an inverted bulk-heterojunction (BHJ) cell in an indium-tin oxide (ITO)/titania nanosheet (TN)/poly(3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methylester (PCBM) active layer/MoOx/Ag multilayered photovoltaic device and a conventional BHJ cell in ITO/MoOx/P3HT:PCBM active layer/TN/Al multilayered photovoltaic device. The insertion of only one or two layers of poly(diallyldimethylammonium chloride) (PDDA) and TN multilayered film prepared by the layer-by-layer deposition technique effectively decreased the leakage current and increased the open circuit voltage (VOC), fill factor (FF), and power conversion efficiency (η). The conventional cell sandwiched between a solution-processed, partially crystallized molybdenum oxide hole-extracting buffer layer and a TN electron extracting buffer layer showed comparable cell performance to a device sandwiched between vacuum-deposited molybdenum oxide and TN layers, whereas the inverted cell with solution-processed molybdenum oxide showed a poorer performance probably owing to the increment in the leakage current across the film. The abnormal S-shaped curves observed in the inverted BHJ cell above VOC disappeared with the use of a polyfluorene-based cationic semiconducting polymer as a substitute for an insulating PDDA film, resulting in the improved cell performance.

SiC Composite for Fuel Structure Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yueh, Ken

Extensive evaluation was performed to determine the suitability of using SiC composite as a boiling water reactor (BWR) fuel channel material. A thin walled SiC composite box, 10 cm in dimension by approximately 1.5 mm wall thickness was fabricated using chemical vapor deposition (CVD) for testing. Mechanical test results and performance evaluations indicate the material could meet BWR channel mechanical design requirement. However, large mass loss of up to 21% was measured in in-pile corrosion test under BWR-like conditions in under 3 months of irradiation. A fresh sister sample irradiated in a follow-up cycle under PWR conditions showed no measureablemore » weight loss and thus supports the hypothesis that the oxidizing condition of the BWR-like coolant chemistry was responsible for the high corrosion rate. A thermodynamic evaluation showed SiC is not stable and the material may oxidize to form SiO 2 and CO 2. Silica has demonstrated stability in high temperature steam environment and form a protective oxide layer under severe accident conditions. However, it does not form a protective layer in water under normal BWR operational conditions due to its high solubility. Corrosion product stabilization by modifying the SiC CVD surface is an approach evaluated in this study to mitigate the high corrosion rate. Titanium and zirconium have been selected as stabilizing elements since both TiSiO 4 and ZrSiO 4 are insoluble in water. Corrosion test results in oxygenated water autoclave indicate TiSiO4 does not form a protective layer. However, zirconium doped test samples appear to form a stable continuous layer of ZrSiO 4 during the corrosion process. Additional process development is needed to produce a good ZrSiC coating to verify functionality of the mitigation concept.« less

Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag

NASA Astrophysics Data System (ADS)

Hoseinzadeh, S.; Ghasemiasl, R.; Bahari, A.; Ramezani, A. H.

2018-03-01

In the current study, composites of tungsten trioxide (W03) and silver (Ag) are deposited in a layer-by-layer electrochromic (EC) arrangement onto a fluorine-doped tin oxide coated glass substrate. Tungsten oxide nanoparticles are an n-type semiconductor that can be used as EC cathode material. Nano-sized silver is a metal that can serve as an electron trap center that facilitates charge departure. In this method, the WO3 and Ag nanoparticle powder were deposited by physical vapor deposition onto the glass substrate. The fabricated electrochromic devices (ECD) were post-annealed to examine the effect of temperature on their EC properties. The morphology of the thin film was characterized by scanning electron microscopy and atomic force microscopy. Structural analysis showed that the addition of silver dopant increased the size of the aggregation of the film. The film had an average approximate roughness of about 17.8 nm. The electro-optical properties of the thin film were investigated using cyclic voltammetry and UV-visible spectroscopy to compare the effects of different post-annealing temperatures. The ECD showed that annealing at 200°C provided better conductivity (maximum current of about 90 mA in the oxidation state) and change of transmittance (ΔT = 90% at the continuous switching step) than did the other thin films. The optical band gaps of the thin film showed that it allowed direct transition at 3.85 eV. The EC properties of these combinations of coloration efficiency and response time indicate that the WO3-Ag-WO3-Ag arrangement is a promising candidate for use in such ECDs.

Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Wonjong; Cho, Gu Young; Noh, Seungtak

2015-01-15

An ultrathin yttria-stabilized zirconia (YSZ) blocking layer deposited by atomic layer deposition (ALD) was utilized for improving the performance and reliability of low-temperature solid oxide fuel cells (SOFCs) supported by an anodic aluminum oxide substrate. Physical vapor-deposited YSZ and gadolinia-doped ceria (GDC) electrolyte layers were deposited by a sputtering method. The ultrathin ALD YSZ blocking layer was inserted between the YSZ and GDC sputtered layers. To investigate the effects of an inserted ultrathin ALD blocking layer, SOFCs with and without an ultrathin ALD blocking layer were electrochemically characterized. The open circuit voltage (1.14 V) of the ALD blocking-layered SOFC was visiblymore » higher than that (1.05 V) of the other cell. Furthermore, the ALD blocking layer augmented the power density and improved the reproducibility.« less

Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer

DOEpatents

Feng, Tom; Ghosh, Amal K.

1980-01-01

Highly efficient tin oxide-silicon heterojunction solar cells are prepared by heating a silicon substrate, having an insulating layer thereon, to provide a substrate temperature in the range of about 300.degree. C. to about 400.degree. C. and thereafter spraying the so-heated substrate with a solution of tin tetrachloride in a organic ester boiling below about 250.degree. C. Preferably the insulating layer is naturally grown silicon oxide layer.

Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Soshi, E-mail: sato.soshi@cies.tohoku.ac.jp; Honjo, Hiroaki; Niwa, Masaaki

2015-04-06

We have investigated the redox reaction on the surface of Ta/CoFeB/MgO/CoFeB magnetic tunnel junction stack samples after annealing at 300, 350, and 400 °C for 1 h using angle-resolved X-ray photoelectron spectroscopy for precise analysis of the chemical bonding states. At a capping tantalum layer thickness of 1 nm, both the capping tantalum layer and the surface of the underneath CoFeB layer in the as-deposited stack sample were naturally oxidized. By comparison of the Co 2p and Fe 2p spectra among the as-deposited and annealed samples, reduction of the naturally oxidized cobalt and iron atoms occurred on the surface of the CoFeB layer.more » The reduction reaction was more significant at higher annealing temperature. Oxidized cobalt and iron were reduced by boron atoms that diffused toward the surface of the top CoFeB layer. A single CoFeB layer was prepared on SiO{sub 2}, and a confirmatory evidence of the redox reaction with boron diffusion was obtained by angle-resolved X-ray photoelectron spectroscopy analysis of the naturally oxidized surface of the CoFeB single layer after annealing. The redox reaction is theoretically reasonable based on the Ellingham diagram.« less

Oxygen Release Induced Chemomechanical Breakdown of Layered Cathode Materials

DOE PAGES

Mu, Linqin; Lin, Ruoqian; Xu, Rong; ...

2018-04-18

Chemical and mechanical properties interplay on the nanometric scale and collectively govern the functionalities of battery materials. Understanding the relationship between the two can inform the design of battery materials with optimal chemomechanical properties for long-life lithium batteries. Herein, we report a mechanism of nanoscale mechanical breakdown in layered oxide cathode materials, originating from oxygen release at high states of charge under thermal abuse conditions. Here, we observe that the mechanical breakdown of charged Li 1-xNi 0.4Mn 0.4Co 0.2O 2 materials proceeds via a two-step pathway involving intergranular and intragranular crack formation. Owing to the oxygen release, sporadic phase transformationsmore » from the layered structure to the spinel and/or rocksalt structures introduce local stress, which initiates microcracks along grain boundaries and ultimately leads to the detachment of primary particles; i.e., intergranular crack formation. Furthermore, intragranular cracks (pores and exfoliations) form, likely due to the accumulation of oxygen vacancies and continuous phase transformations at the surfaces of primary particles. Finally, finite element modeling confirms our experimental observation that the crack formation is attributable to formation of oxygen vacancies, oxygen release, and phase transformations. This study is designed to directly observe the chemomechanical behavior of layered oxide cathode materials and provides a chemical basis for strengthening primary and secondary particles by stabilizing the oxygen anions in the lattice.« less

Oxygen Release Induced Chemomechanical Breakdown of Layered Cathode Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mu, Linqin; Lin, Ruoqian; Xu, Rong

Chemical and mechanical properties interplay on the nanometric scale and collectively govern the functionalities of battery materials. Understanding the relationship between the two can inform the design of battery materials with optimal chemomechanical properties for long-life lithium batteries. Herein, we report a mechanism of nanoscale mechanical breakdown in layered oxide cathode materials, originating from oxygen release at high states of charge under thermal abuse conditions. Here, we observe that the mechanical breakdown of charged Li 1-xNi 0.4Mn 0.4Co 0.2O 2 materials proceeds via a two-step pathway involving intergranular and intragranular crack formation. Owing to the oxygen release, sporadic phase transformationsmore » from the layered structure to the spinel and/or rocksalt structures introduce local stress, which initiates microcracks along grain boundaries and ultimately leads to the detachment of primary particles; i.e., intergranular crack formation. Furthermore, intragranular cracks (pores and exfoliations) form, likely due to the accumulation of oxygen vacancies and continuous phase transformations at the surfaces of primary particles. Finally, finite element modeling confirms our experimental observation that the crack formation is attributable to formation of oxygen vacancies, oxygen release, and phase transformations. This study is designed to directly observe the chemomechanical behavior of layered oxide cathode materials and provides a chemical basis for strengthening primary and secondary particles by stabilizing the oxygen anions in the lattice.« less

Multi-oxide active layer deposition using Applied Materials Pivot array coater for high-mobility metal oxide TFT

NASA Astrophysics Data System (ADS)

Park, Hyun Chan; Scheer, Evelyn; Witting, Karin; Hanika, Markus; Bender, Marcus; Hsu, Hao Chien; Yim, Dong Kil

2015-11-01

By controlling a thin indium tin oxide (ITO), indium zinc oxide interface layer between gate insulator and indium gallium zinc oxide (IGZO), the thin-film transistor (TFT) performance can reach higher mobility as conventional IGZO as well as superior stability. For large-area display application, Applied Materials static PVD array coater (Applied Materials GmbH & Co. KG, Alzenau, Germany) using rotary targets has been developed to enable uniform thin layer deposition in display industry. Unique magnet motion parameter optimization in Pivot sputtering coater is shown to provide very uniform thin ITO layer to reach TFT performance with high mobility, not only on small scale, but also on Gen8.5 (2500 × 2200 mm glass size) production system.

Research into the use of pyrolytic oxides and polymers for the fabrication of thin film high energy capacitors

NASA Technical Reports Server (NTRS)

Nevin, J. H.

1983-01-01

Construction, capacitance and dissipation factor, and electrode materials for single layer capacitors are discussed. Basic construction, phosphosilicate glass, ten layer capacitors, twenty layer capacitors, stress measurements, buffered oxide layers, and 30 layer capacitors are also discussed. Spin-on phosphosilicate glass is addressed. Polymers as dielectric materials are also considered.

Oxide-based materials by atomic layer deposition

NASA Astrophysics Data System (ADS)

Godlewski, Marek; Pietruszka, Rafał; Kaszewski, Jarosław; Witkowski, Bartłomiej S.; Gierałtowska, Sylwia; Wachnicki, Łukasz; Godlewski, Michał M.; Slonska, Anna; Gajewski, Zdzisław

2017-02-01

Thin films of wide band-gap oxides grown by Atomic Layer Deposition (ALD) are suitable for a range of applications. Some of these applications will be presented. First of all, ALD-grown high-k HfO2 is used as a gate oxide in the electronic devices. Moreover, ALD-grown oxides can be used in memory devices, in transparent transistors, or as elements of solar cells. Regarding photovoltaics (PV), ALD-grown thin films of Al2O3 are already used as anti-reflection layers. In addition, thin films of ZnO are tested as replacement of ITO in PV devices. New applications in organic photovoltaics, electronics and optoelectronics are also demonstrated Considering new applications, the same layers, as used in electronics, can also find applications in biology, medicine and in a food industry. This is because layers of high-k oxides show antibacterial activity, as discussed in this work.

Effect of protein adsorption on the corrosion behavior of 70Cu-30Ni alloy in artificial seawater.

PubMed

Torres Bautista, Blanca E; Carvalho, Maria L; Seyeux, Antoine; Zanna, Sandrine; Cristiani, Pierangela; Tribollet, Bernard; Marcus, Philippe; Frateur, Isabelle

2014-06-01

Copper alloys often used in cooling circuits of industrial plants can be affected by biocorrosion induced by biofilm formation. The objective of this work was to study the influence of protein adsorption, which is the first step in biofilm formation, on the electrochemical behavior of 70Cu-30Ni (wt.%) alloy in static artificial seawater and on the chemical composition of oxide layers. For that purpose, electrochemical measurements performed after 1h of immersion were combined to surface analyses. A model is proposed to analyze impedance data. In the presence of bovine serum albumin (BSA, model protein), the anodic charge transfer resistance deduced from EIS data at Ecorr is slightly higher, corresponding to lower corrosion current. Without BSA, two oxidized layers are shown by XPS and ToF-SIMS: an outer layer mainly composed of copper oxide (Cu2O redeposited layer) and an inner layer mainly composed of oxidized nickel, with a global thickness of ~30nm. The presence of BSA leads to a mixed oxide layer (CuO, Cu2O, Ni(OH)2) with a lower thickness (~10nm). Thus, the protein induces a decrease of the dissolution rate at Ecorr and hence a decrease of the amount of redeposited Cu2O and of the oxide layer thickness. © 2013.

α-Tocopherol/Gallic Acid Cooperation in the Protection of Galactolipids Against Ozone-Induced Oxidation.

PubMed

Rudolphi-Skórska, Elżbieta; Filek, Maria; Zembala, Maria

2016-04-01

The protective ability of α-tocopherol (TOH) and gallic acid (GA) acting simultaneously at the moment of oxidizer application was evaluated by determination of galactolipid layers' oxidation degree. Addition of GA resulted in a significant decrease of ozone-derived radicals shifting the threshold of lipid sensitivity by an amount approximately corresponding to the GA intake in bulk reaction with ozone. TOH presence in lipid layers results in a change of the role of GA which additionally may be involved in the reduction of tocopheroxyl radical formed during oxidation. This leads to a decrease in effectiveness of GA in diminishing the amount of ozone radicals. Such an effect was not observed for mixed layers containing galactolipid and pre-oxidized tocopherol where the ozone threshold level was associated with a stoichiometry of GA + O3 reaction. It was concluded that probably subsequent transformations of tocopheroxyl radical to less reactive forms prevent its reaction with GA the entire quantity of which is used for radicals scavenging. This result shows the role of time parameter in systems where substrates are engaged in various reactions taking place simultaneously. The inactivation of 1,1-diphenyl-2-picrylhydrazyl radical by studied antioxidants in homogeneous system confirmed observations made on the basis of lipid layer properties indicating their antagonistic action (at least at studied conditions). Formation of layers in post-oxidation situation did not depend whether tocopherol was oxidized during oxidation of lipid/tocopherol mixture or was introduced as pre-oxidized. This may be interpreted as indication that products of tocopherol oxidation may stabilize lipid layers.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Density functional theory simulation of titanium migration and reaction with oxygen in the early stages of oxidation of equiatomic NiTi alloy.

PubMed

Nolan, Michael; Tofail, Syed A M

2010-05-01

The biocompatibility of NiTi shape memory alloys (SMA) has made possible applications in self-expandable cardio-vascular stents, stone extraction baskets, catheter guide wires and other invasive and minimally invasive biomedical devices. The NiTi intermetallic alloy spontaneously forms a thin passive layer of TiO(2), which provides its biocompatibility. The oxide layer is thought to form as the Ti in the alloy surface reacts with oxygen, resulting in a depletion of Ti in the subsurface region - experimental evidence indicates formation of a Ni-rich layer below the oxide film. In this paper, we study the initial stages of oxide growth on the (110) surface of the NiTi alloy to understand the formation of alloy/oxide interface. We initially adsorb atomic and molecular oxygen on the (110) surface and then successively add O(2) molecules, up to 2 monolayer of O(2). Oxygen adsorption always results in a large energy gain. With atomic oxygen, Ti is pulled out of the surface layer leaving behind a Ni-rich subsurface region. Molecular O(2), on the other hand adsorbs dissociatively and pulls a Ti atom farther out of the surface layer. The addition of further O(2) up to 1 monolayer is also dissociative and results in complete removal of Ti from the initial surface layer. When further O(2) is added up to 2 monolayer, Ti is pulled even further out of the surface and a single thin layer of composition O-Ti-O is formed. The electronic structure shows that the metallic character of the alloy is unaffected by interaction with oxygen and formation of the oxide layer, consistent with the oxide layer being a passivant. Copyright 2010 Elsevier Ltd. All rights reserved.

Investigation on Tribological Properties of the Pre-oxidized Ti2AlN/TiAl Composite

NASA Astrophysics Data System (ADS)

Wang, Daqun; Sun, Dongli; Han, Xiuli; Wang, Qing; Wang, Guangwei

2018-03-01

Different oxidation layers on the Ti2AlN/TiAl substrate which was fabricated by in situ synthesis were prepared through thermal oxidation process. The microstructure, phase identification and elements distribution of the oxidation layers were analyzed. The tribological performance of pre-oxidized composites against Si3N4 ball at 25 and 600 °C, as well as the effect of pre-oxidation layers on tribological performance was systematically investigated. The results show that, compared to Ti2AlN/TiAl, the pre-oxidized composites present more excellent tribological properties, especially the wear resistance at 600 °C. It is a significant finding that, different from severe abrasive wear and plastic deformation of Ti2AlN/TiAl, the tribo-films formed by the pre-oxidation layers on the worn surface of pre-oxidized composites weaken abrasive wear and suppress the development of plastic deformation to protect the underlying composite substrate from wear. Moreover, the stable cooperation on the interface between tribo-films and Si3N4 ball results in the relatively steady friction coefficient.

The role of polymer films on the oxidation of magnetite nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Letti, C.J.; Paterno, L.G.; Pereira-da-Silva, M.A.

2017-02-15

A detailed investigation about the role of polymer films on the oxidation process of magnetite nanoparticles (∼7 nm diameter), under laser irradiation is performed employing micro Raman spectroscopy. To support this investigation, Fe{sub 3}O{sub 4}-np are synthesized by the co-precipitation method and assembled layer-by-layer with sodium sulfonated polystyrene (PSS). Polymer films (Fe{sub 3}O{sub 4}-np/PSS){sub n} with n=2,3,5,7,10 and 25 bilayers are employed as a model system to study the oxidation process under laser irradiation. Raman data are further processed by principal component analysis. Our findings suggest that PSS protects Fe{sub 3}O{sub 4}-np from oxidation when compared to powder samples, evenmore » for the sample with the greater number of bilayers. Further, the oxidation of magnetite to maghemite occurs preferably for thinner films up to 7 bilayers, while the onset for the formation of the hematite phase depends on the laser intensity for thicker films. Water takes part on the oxidation processes of magnetite, the oxidation/phase transformation of Fe{sub 3}O{sub 4}-np is intensified in films with more bilayers, since more water is included in those films. Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films showed to be very efficient to avoid the oxidation process in nanosized magnetite. - Graphical abstract: Encapsulation of Fe{sub 3}O{sub 4}-np by PSS in layer-by-layer films avoids the oxidation and phase transformation of nanosized magnetite. - Highlights: • (Fe{sub 3}O{sub 4}-np/PSS){sub n} nanofilms, with n=2 up to 25, where layer-by-layer assembled. • The influence of film architecture on the Fe{sub 3}O{sub 4}-np oxidation was investigated through Raman spectroscopy. • Encapsulation of Fe{sub 3}O{sub 4}-np by PSS showed to be very efficient to avoid the Fe{sub 3}O{sub 4}-np oxidation.« less

Duplex aluminized coatings

NASA Technical Reports Server (NTRS)

Gedwill, M. A.; Grisaffe, S. J. (Inventor)

1975-01-01

The surface of a metallic base system is initially coated with a metallic alloy layer that is ductile and oxidation resistant. An aluminide coating is then applied to the metallic alloy layer. The chemistry of the metallic alloy layer is such that the oxidation resistance of the subsequently aluminized outermost layer is not seriously degraded.

Stabilizing metal components in electrodes of electrochemical cells

DOEpatents

Spengler, Charles J.; Ruka, Roswell J.

1989-01-01

Disclosed is a method of reducing the removal or transfer into a gas phase of a current carrying metal in an apparatus, such as an electrochemical cell 2 having a porous fuel electrode 6 containing metal particles 11, where the metal is subject to removal or transfer into a gaseous phase, the method characterized in that (1) a metal organic compound that decomposes to form an electronically conducting oxide coating when heated is applied to the metal and porous electrode, and (2) the compound on the metal is then heated to a temperature sufficient to decompose the compound into an oxide coating 13 by increasing the temperature at a rate that is longer than 1 hour between room temperature and 600.degree. C., resulting in at least one continuous layer 13, 14 of the oxide coating on the metal.

Tensile behavior of glass/ceramic composite materials at elevated temperatures

NASA Technical Reports Server (NTRS)

Mandell, J. F.; Grande, D. H.; Jacobs, J.

1987-01-01

This paper describes the tensile behavior of high-temperature composite materials containing continuous Nicalon ceramic fiber reinforcement and glass and glass/ceramic matrices. The longitudinal properties of these materials can approach theoretical expectations for brittle matrix composites, failing at a strength and ultimate strain level consistent with those of the fibers. The brittle, high-modulus matrices result in a nonlinear stress-strain curve due to the onset of stable matrix cracking at 10 to 30 percent of the fiber strain to failure, and at strains below this range in off-axis plies. Current fibers and matrices can provide attractive properties well above 1000 C, but composites experience embrittlement in oxidizing atmospheres at 800 to 1000 C due to oxidation of a carbon interface reaction layer.The oxidation effect greatly increases the interface bond strength, causing composite embrittlement.

Corrosion behavior of oxide dispersion strengthened ferritic steels in supercritical water

NASA Astrophysics Data System (ADS)

Gao, Wenhua; Guo, Xianglong; Shen, Zhao; Zhang, Lefu

2017-04-01

The corrosion resistance of three different Cr content oxide dispersion strengthened (ODS) ferritic steels in supercritical water (SCW) and their passive films formed on the surface have been investigated. The results show that the dissolved oxygen (DO) and chemical composition have significant influence on the corrosion behavior of the ODS ferritic steels. In 2000 ppb DO SCW at 650 °C, the 14Cr-4Al ODS steel forms a tri-layer oxide film and the surface morphologies have experienced four structures. For the tri-layer oxide film, the middle layer is mainly Fe-Cr spinel and the Al is gradually enriched in the inner layer.

Preparation and electrochemical properties of core-shell carbon coated Mn-Sn complex metal oxide as anode materials for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Zhang, Ruixue; Fang, Guoqing; Liu, Weiwei; Xia, Bingbo; Sun, Hongdan; Zheng, Junwei; Li, Decheng

2014-02-01

In this study, we synthesized a carbon coated Mn-Sn metal oxide composite with core-shell structure (MTO@C) via a simple glucose hydrothermal reaction and subsequent carbonization approach. When the MTO@C composite was applied as an anode material for lithium-ion batteries, it maintained a reversible capacity of 409 mA h g-1 after 200 cycles at a current density of 100 mA g-1. The uniformed and continuous carbon layer formed on the MTO nanoparticles, effectively buffered the volumetric change of the active material and increased electronic conductivity, which thus prolonged the cycling performance of the MTO@C electrode.

Superconductive articles including cerium oxide layer

DOEpatents

Wu, X.D.; Muenchausen, R.E.

1993-11-16

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure. 7 figures.

Superconductive articles including cerium oxide layer

DOEpatents

Wu, Xin D.; Muenchausen, Ross E.

1993-01-01

A ceramic superconductor comprising a metal oxide substrate, a ceramic high temperature superconductive material, and a intermediate layer of a material having a cubic crystal structure, said layer situated between the substrate and the superconductive material is provided, and a structure for supporting a ceramic superconducting material is provided, said structure comprising a metal oxide substrate, and a layer situated over the surface of the substrate to substantially inhibit interdiffusion between the substrate and a ceramic superconducting material deposited upon said structure.

In-situ formation of multiphase deposited thermal barrier coatings

DOEpatents

Subramanian, Ramesh

2004-01-13

A multiphase ceramic thermal barrier coating is provided. The coating is adapted for use in high temperature applications in excess of about 1200.degree. C., for coating superalloy components of a combustion turbine engine. The coating comprises a ceramic single or two oxide base layer disposed on the substrate surface; and a ceramic oxide reaction product material disposed on the base layer, the reaction product comprising the reaction product of the base layer with a ceramic single or two oxide overlay layer.

Use of chemical mechanical polishing in micromachining

DOEpatents

Nasby, Robert D.; Hetherington, Dale L.; Sniegowski, Jeffry J.; McWhorter, Paul J.; Apblett, Christopher A.

1998-01-01

A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.

Mössbauer study of oxide phase distributions in rust formed on steel constructions near the Black Sea in Sochi

NASA Astrophysics Data System (ADS)

Filippov, V. P.; Lauer, Yu. A.; Goloborodko, P. G.; Polyakov, A. M.

2016-12-01

The phase composition of the intermediate oxide layers formed on elements of steel structures at different positions relative to the sea water of the Black Sea near Sochi are investigated. The differences of the phase composition of these oxide layers are shown, depending on the location of the design details in relation to the sea and the abundancies of certain types of oxides in the studied layers are discussed.

Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

PubMed Central

Borowicz, P.; Taube, A.; Rzodkiewicz, W.; Latek, M.; Gierałtowska, S.

2013-01-01

Three samples with dielectric layers from high-κ dielectrics, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide on silicon substrate were studied by Raman spectroscopy. The results obtained for high-κ dielectrics were compared with spectra recorded for silicon dioxide. Raman spectra suggest the similarity of gadolinium-silicon oxide and lanthanum-lutetium oxide to the bulk nondensified silicon dioxide. The temperature treatment of hafnium oxide shows the evolution of the structure of this material. Raman spectra recorded for as-deposited hafnium oxide are similar to the results obtained for silicon dioxide layer. After thermal treatment especially at higher temperatures (600°C and above), the structure of hafnium oxide becomes similar to the bulk non-densified silicon dioxide. PMID:24072982

Aluminium or copper substrate panel for selective absorption of solar energy

NASA Technical Reports Server (NTRS)

Roberts, M. L.; Sharpe, M. H.; Krupnick, A. C. (Inventor)

1979-01-01

A method for making panels which selectively absorb solar energy is disclosed. The panels are comprised of an aluminum substrate, a layer of zinc thereon, a layer of nickel over the zinc layer and an outer layer of solar energy absorbing nickel oxide or a copper substrate with a layer of nickel thereon and a layer of solar energy absorbing nickel oxide distal from the copper substrate.

Relationships between structure and activity of carbon as a multifunctional support for electrocatalysts.

PubMed

Stevanović, Sanja I; Panić, Vladimir V; Dekanski, Aleksandar B; Tripković, Amalija V; Jovanović, Vladislava M

2012-07-14

We report on new insights into the relationships between structure and activity of glassy carbon (GC), as a model material for electrocatalyst support, during its anodization in acid solution. Our investigation strongly confirms the role of CFGs in promotion of Pt activity by the "spill-over" effect related to CO(ads) for methanol electrooxidation (MEO) on a carbon-supported Pt catalyst. Combined analysis of voltammetric and impedance behaviour as well as changes in GC surface morphology induced by intensification of anodizing conditions reveal an intrinsic influence of the carbon functionalization and the structure of a graphene oxide (GO) layer on the electrical and electrocatalytic properties of activated GC. Although GO continuously grows during anodization, it structurally changes from being a graphite inter-layer within graphite ribbons toward a continuous GO surface layer that deteriorates the native structure of GC. As a consequence of the increased distance between GO-spaced graphite layers, the GC conductivity decreases until the case of profound GO exfoliation under drastic anodizing conditions. This exposes the native, yet abundantly functionalized, GC texture. While GC capacitance continuously increases with intensification of anodizing conditions, the surface nano-roughness and GO resistance reach the highest values at modest anodizing conditions, and then decrease upon drastic anodization due to the onset of GO exfoliation. We found for the first time that the activity of a GC-supported Pt catalyst in MEO, as one of the promising half-reactions in polymer electrolyte fuel cells, strictly follows the changes in GC nano-roughness and GO-induced GC resistance. The highest GC/Pt MEO activity is reached when optimal distance between graphite layers and optimal degree of GC functionalization bring the highest amount of CFGs into intimate contact with the Pt surface. This confirms the promoting role of CFGs in MEO catalysis.

Strain-tolerant ceramic coated seal

DOEpatents

Schienle, James L.; Strangman, Thomas E.

1994-01-01

A metallic regenerator seal is provided having multi-layer coating comprising a NiCrAlY bond layer, a yttria stabilized zirconia (YSZ) intermediate layer, and a ceramic high temperature solid lubricant surface layer comprising zinc oxide, calcium fluoride, and tin oxide. An array of discontinuous grooves is laser machined into the outer surface of the solid lubricant surface layer making the coating strain tolerant.

Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layer.

PubMed

Wang, Zhenwei; Al-Jawhari, Hala A; Nayak, Pradipta K; Caraveo-Frescas, J A; Wei, Nini; Hedhili, M N; Alshareef, H N

2015-04-20

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190 °C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

PubMed Central

Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, M. N.; Alshareef, H. N.

2015-01-01

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field. PMID:25892711

Fretting wear behavior of zirconium alloy in B-Li water at 300 °C

NASA Astrophysics Data System (ADS)

Zhang, Lefu; Lai, Ping; Liu, Qingdong; Zeng, Qifeng; Lu, Junqiang; Guo, Xianglong

2018-02-01

The tangential fretting wear of three kinds of zirconium alloys tube mated with 304 stainless steel (SS) plate was investigated. The tests were conducted in an autoclave containing 300 °C pressurized B-Li water for tube-on-plate contact configuration. The worn surfaces were examined with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and 3D microscopy. The cross-section of wear scar was examined with transmission electron microscope (TEM). The results indicated that the dominant wear mechanism of zirconium alloys in this test condition was delamination and oxidation. The oxide layer on the fretted area consists of outer oxide layer composed of iron oxide and zirconium oxide and inner oxide layer composed of zirconium oxide.

Die singulation method

DOEpatents

Swiler, Thomas P.; Garcia, Ernest J.; Francis, Kathryn M.

2013-06-11

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with an HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Die singulation method

DOEpatents

Swiler, Thomas P [Albuquerque, NM; Garcia, Ernest J [Albuquerque, NM; Francis, Kathryn M [Rio Rancho, NM

2014-01-07

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with a HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Single-Step Electrophoretic Deposition of Non-noble Metal Catalyst Layer with Low Onset Voltage for Ethanol Electro-oxidation.

PubMed

Ahmadi Daryakenari, Ahmad; Hosseini, Davood; Ho, Ya-Lun; Saito, Takumi; Apostoluk, Aleksandra; Müller, Christoph R; Delaunay, Jean-Jacques

2016-06-29

A single-step electrophoretic deposition (EPD) process is used to fabricate catalyst layers which consist of nickel oxide nanoparticles attached on the surface of nanographitic flakes. Magnesium ions present in the colloid charge positively the flake's surface as they attach on it and are also used to bind nanographitic flakes together. The fabricated catalyst layers showed a very low onset voltage (-0.2 V vs Ag/AgCl) in the electro-oxidation of ethanol. To clarify the occurring catalytic mechanism, we performed annealing treatment to produce samples having a different electrochemical behavior with a large onset voltage. Temperature dependence measurements of the layer conductivity pointed toward a charge transport mechanism based on hopping for the nonannealed layers, while the drift transport is observed in the annealed layers. The hopping charge transport is responsible for the appearance of the low onset voltage in ethanol electro-oxidation.

Solar cells having integral collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1978-01-01

A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base metal layer. A back surface field region was formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device. A metal alloy grid network was included. An insulating layer prevented electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer.

Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

NASA Astrophysics Data System (ADS)

Henegar, A. J., , Dr.; Gougousi, T., , Prof.

2016-12-01

In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al2O3 and TiO2, using H2O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al2O3 ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO2 and the native oxides continues well after the surface has been covered with 2 nm of TiO2. This difference is traced to the superior properties of Al2O3 as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to lower native oxide stability as well as an initial diffusion path formation by the indium oxides.

Improved high temperature integration of Al{sub 2}O{sub 3} on MoS{sub 2} by using a metal oxide buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, Seokki; Choi, Moonseok; Kim, Dohyung

2015-01-12

We deposited a metal oxide buffer layer before atomic layer deposition (ALD) of Al{sub 2}O{sub 3} onto exfoliated molybdenum disulfide (MoS{sub 2}) in order to accomplish enhanced integration. We demonstrate that even at a high temperature, functionalization of MoS{sub 2} by means of a metal oxide buffer layer can effectively provide nucleation sites for ALD precursors, enabling much better surface coverage of Al{sub 2}O{sub 3}. It is shown that using a metal oxide buffer layer not only allows high temperature ALD process, resulting in highly improved quality of Al{sub 2}O{sub 3}/MoS{sub 2} interface, but also leaves MoS{sub 2} intact.

Alkali resistant optical coatings for alkali lasers and methods of production thereof

DOEpatents

Soules, Thomas F; Beach, Raymond J; Mitchell, Scott C

2014-11-18

In one embodiment, a multilayer dielectric coating for use in an alkali laser includes two or more alternating layers of high and low refractive index materials, wherein an innermost layer includes a thicker, >500 nm, and dense, >97% of theoretical, layer of at least one of: alumina, zirconia, and hafnia for protecting subsequent layers of the two or more alternating layers of high and low index dielectric materials from alkali attack. In another embodiment, a method for forming an alkali resistant coating includes forming a first oxide material above a substrate and forming a second oxide material above the first oxide material to form a multilayer dielectric coating, wherein the second oxide material is on a side of the multilayer dielectric coating for contacting an alkali.

Oxide Protective Coats for Ir/Re Rocket Combustion Chambers

NASA Technical Reports Server (NTRS)

Fortini, Arthur; Tuffias, Robert H.

2003-01-01

An improved material system has been developed for rocket engine combustion chambers for burning oxygen/ hydrogen mixtures or novel monopropellants, which are highly oxidizing at operating temperatures. The baseline for developing the improved material system is a prior iridium/rhenium system for chambers burning nitrogen tetroxide/monomethyl hydrazine mixtures, which are less oxidizing. The baseline combustion chamber comprises an outer layer of rhenium that provides structural support, plus an inner layer of iridium that acts as a barrier to oxidation of the rhenium. In the improved material system, the layer of iridium is thin and is coated with a thermal fatigue-resistant refractory oxide (specifically, hafnium oxide) that serves partly as a thermal barrier to decrease the temperature and thus the rate of oxidation of the rhenium. The oxide layer also acts as a barrier against the transport of oxidizing species to the surface of the iridium. Tests in which various oxygen/hydrogen mixtures were burned in iridium/rhenium combustion chambers lined with hafnium oxide showed that the operational lifetimes of combustion chambers of the improved material system are an order of magnitude greater than those of the baseline combustion chambers.

Spin Hall driven domain wall motion in magnetic bilayers coupled by a magnetic oxide interlayer

NASA Astrophysics Data System (ADS)

Liu, Yang; Furuta, Masaki; Zhu, Jian-Gang Jimmy

2018-05-01

mCell, previously proposed by our group, is a four-terminal magnetoresistive device with isolated write- and read-paths for all-spin logic and memory applications. A mCell requires an electric-insulating magnetic layer to couple the spin Hall driven write-path to the magnetic free layer of the read-path. Both paths are magnetic layers with perpendicular anisotropy and their perpendicularly oriented magnetization needs to be maintained with this insertion layer. We have developed a magnetic oxide (FeOx) insertion layer to serve for these purposes. We show that the FeOx insertion layer provides sufficient magnetic coupling between adjacent perpendicular magnetic layers. Resistance measurement shows that this magnetic oxide layer can act as an electric-insulating layer. In addition, spin Hall driven domain wall motion in magnetic bi-layers coupled by the FeOx insertion layer is significantly enhanced compared to that in magnetic single layer; it also requires low voltage threshold that poses possibility for power-efficient device applications.

Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

DOE PAGES

Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

2016-12-22

Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr 3Al 2O 6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr 3Al 2O 6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO 3 layer can be employed as an effective barrier to preserve Sr 3Al 2O 6 during subsequent growth, thus allowingmore » its integration in a wider range of oxide heterostructures.« less

Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

NASA Astrophysics Data System (ADS)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

Coating with overlay metallic-cermet alloy systems

NASA Technical Reports Server (NTRS)

Gedwill, M. A.; Levine, S. R.; Glasgow, T. K. (Inventor)

1984-01-01

A base layer of an oxide dispersed, metallic alloy (cermet) is arc plasma sprayed onto a substrate, such as a turbine blade, vane, or the like, which is subjected to high temperature use. A top layer of an oxidation, hot corrosion, erosion resistant alloy of nickel, cobalt, or iron is then arc plasma sprayed onto the base layer. A heat treatment is used to improve the bonding. The base layer serves as an inhibitor to interdiffusion between the protective top layer and the substrate. Otherwise, the 10 protective top layer would rapidly interact detrimentally with the substrate and degrade by spalling of the protective oxides formed on the outer surface at elevated temperatures.

Novel approaches for fabrication of thin film layers for solid oxide electrolyte fuel cells

NASA Technical Reports Server (NTRS)

Murugesamoorthi, K. A.; Srinivasan, S.; Cocke, D. L.; Appleby, A. J.

1990-01-01

The main objectives of the SOFC (solid oxide fuel cell) project are to (1) identify viable and cost-effective techniques to prepare cell components for stable MSOFCs (monolithic SOFCs); (2) fabricate half and single cells; and (3) evaluate their performances. The approach used to fabricate stable MSOFCs is as follows: (1) the electrolyte layer is prepared in the form of a honeycomb structure by alloy oxidation and other cell components are deposited on it; (2) the electrolyte and anode layers are deposited on the cathode layer, which has a porous, honeycomb structure; and (3) the electrolyte and cathode layers are deposited on the anode layer. The current status of the project is reported.

Comparative electrochemical analysis of crystalline and amorphous anodized iron oxide nanotube layers as negative electrode for LIB.

PubMed

Pervez, Syed Atif; Kim, Doohun; Farooq, Umer; Yaqub, Adnan; Choi, Jung-Hee; Lee, You-Jin; Doh, Chil-Hoon

2014-07-23

This work is a comparative study of the electrochemical performance of crystalline and amorphous anodic iron oxide nanotube layers. These nanotube layers were grown directly on top of an iron current collector with a vertical orientation via a simple one-step synthesis. The crystalline structures were obtained by heat treating the as-prepared (amorphous) iron oxide nanotube layers in ambient air environment. A detailed morphological and compositional characterization of the resultant materials was performed via transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and Raman spectroscopy. The XRD patterns were further analyzed using Rietveld refinements to gain in-depth information on their quantitative phase and crystal structures after heat treatment. The results demonstrated that the crystalline iron oxide nanotube layers exhibit better electrochemical properties than the amorphous iron oxide nanotube layers when evaluated in terms of the areal capacity, rate capability, and cycling performance. Such an improved electrochemical response was attributed to the morphology and three-dimensional framework of the crystalline nanotube layers offering short, multidirectional transport lengths, which favor rapid Li(+) ions diffusivity and electron transport.

Oxidation of Alloy 600 and Alloy 690: Experimentally Accelerated Study in Hydrogenated Supercritical Water

NASA Astrophysics Data System (ADS)

Moss, Tyler; Cao, Guoping; Was, Gary S.

2017-04-01

The objective of this study is to determine whether the oxidation of Alloys 600 and 690 in supercritical water occurs by the same mechanism in subcritical water. Coupons of Alloys 690 and 600 were exposed to hydrogenated subcritical and supercritical water from 633 K to 673 K (360 °C to 400 °C) and the oxidation behavior was observed. By all measures of oxide character and behavior, the oxidation process is the same above and below the supercritical line. Similar oxide morphologies, structures, and chemistries were observed for each alloy across the critical point, indicating that the oxidation mechanism is the same in both subcritical and supercritical water. Oxidation results in a multi-layer oxide structure composed of particles of NiO and NiFe2O4 formed by precipitation on the outer surface and a chromium-rich inner oxide layer formed by diffusion of oxygen to the metal-oxide interface. The inner oxide on Alloy 600 is less chromium rich than that observed on Alloy 690 and is accompanied by preferential oxidation of grain boundaries. The inner oxide on Alloy 690 initially forms by internal oxidation before a protective layer of chromium-rich MO is formed with Cr2O3 at the metal-oxide interface. Grain boundaries in Alloy 690 act as fast diffusion paths for chromium that forms a protective Cr2O3 layer at the surface, preventing grain boundary oxidation from occurring.

Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and Ar environment

NASA Astrophysics Data System (ADS)

Minami, Kaichiro; Moriya, Atsushi; Yuasa, Kazuhiro; Maeda, Kiyohiko; Yamada, Masayuki; Kunii, Yasuo; Niwano, Michio; Murota, Junichi

2015-08-01

Introduction of Ge into ULSIs has become increasingly attractive because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in cleanroom air, the control of formation and reduction of the Ge oxide is requested for the introduction of Ge layers into Si process. Here, the reactions between gas phase Ge oxide and Si substrate and between the Ge oxide on Ge epitaxial layer and SiH4 are investigated. The native-oxidized Ge amount is obtained by calculating from chemically shifted peak intensity of Ge 3d measured by X-ray photoelectron spectroscopy. By the adsorption of the Ge oxide on Si(1 0 0) surface, pure Ge and Si oxide are formed on the Si surface even at 350 °C and the formed Ge amount tends to correspond to the oxidized Si amount, independently of the heat-treatment environment of H2 and Ar under the condition that Si oxide is not reduced by H2. By SiH4 treatment, the amount of the oxidized Ge on the Ge layer decreases drastically even at 350 °C and Si oxide is formed on the Ge layer. From these results, it is suggested that the Ge oxide is reduced even at 350 °C by Si or SiH4, and the Si oxide and the pure Ge are formed.

Growth and sacrificial oxidation of transition metal nanolayers

NASA Astrophysics Data System (ADS)

Tsarfati, Tim; Zoethout, Erwin; van de Kruijs, Robbert; Bijkerk, Fred

2009-04-01

Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3-4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e - donation by Mo. Au and Cu, in spite of their significantly lower surface free energy, grow in islands on Mo and actually promote Mo oxidation. Applications of the sacrificial oxidation in nanometer thin layers exist in a range of nanoscopic devices, such as nano-electronics and protection of e.g. multilayer X-ray optics for astronomy, medicine and lithography.

Process for thin film deposition of cadmium sulfide

DOEpatents

Muruska, H. Paul; Sansregret, Joseph L.; Young, Archie R.

1982-01-01

The present invention teaches a process for depositing layers of cadmium sulfide. The process includes depositing a layer of cadmium oxide by spray pyrolysis of a cadmium salt in an aqueous or organic solvent. The oxide film is then converted into cadmium sulfide by thermal ion exchange of the O.sup.-2 for S.sup.-2 by annealing the oxide layer in gaseous sulfur at elevated temperatures.

Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx.

PubMed

Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo

2018-02-14

We demonstrate that the inclusion of a Ta interfacial layer is a remarkably effective strategy for forming interfacial oxygen defects at metal/oxide junctions. The insertion of an interfacial layer of a reactive metal, that is, a "scavenging" layer, has been recently proposed as a way to create a high concentration of oxygen defects at an interface in redox-based resistive switching devices, and growing interest has been given to the underlying mechanism. Through structural and chemical analyses of Pt/metal/SrTiO 3 /Pt structures, we reveal that the rate and amount of oxygen scavenging are not directly determined by the formation free energies in the oxidation reactions of the scavenging metal and unveil the important roles of oxygen diffusibility. Active oxygen scavenging and highly uniform oxidation via scavenging are revealed for a Ta interfacial layer with high oxygen diffusibility. In addition, the Ta scavenging layer is shown to exhibit a highly uniform structure and to form a very flat interface with SrTiO 3 , which are advantageous for the fabrication of a steep metal/oxide contact.

Modified band alignment effect in ZnO/Cu2O heterojunction solar cells via Cs2O buffer insertion

NASA Astrophysics Data System (ADS)

Eom, Kiryung; Lee, Dongyoon; Kim, Seunghwan; Seo, Hyungtak

2018-02-01

The effects of a complex buffer layer of cesium oxide (Cs2O) on the photocurrent response in oxide heterojunction solar cells (HSCs) were investigated. A p-n junction oxide HSC was fabricated using p-type copper (I) oxide (Cu2O) and n-type zinc oxide (ZnO); the buffer layer was inserted between the Cu2O and fluorine-doped tin oxide (FTO). Ultraviolet-visible (UV-vis) and x-ray and ultraviolet photoelectron spectroscopy analyses were performed to characterize the electronic band structures of cells, both with and without this buffer layer. In conjunction with the measured band electronic structures, the significantly improved visible-range photocurrent spectra of the buffer-inserted HSC were analyzed in-depth. As a result, the 1 sun power conversion efficiency was increased by about three times by the insertion of buffer layer. The physicochemical origin of the photocurrent enhancement was mainly ascribed to the increased photocarrier density in the buffer layer and modified valence band offset to promote the effective hole transfer at the interface to FTO on the band-alignment model.

Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors.

PubMed

Cho, Kyung-Sang; Heo, Keun; Baik, Chan-Wook; Choi, Jun Young; Jeong, Heejeong; Hwang, Sungwoo; Lee, Sang Yeol

2017-10-10

We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findings: fast charge separation in monolayered quantum dots; efficient charge transport through high-mobility oxide layers (20 cm 2  V -1  s -1 ); and gate-tunable drain-current modulation. Particularly, the fast charge separation rate of 3.3 ns -1 measured with time-resolved photoluminescence is attributed to the intermediate quantum dots buried in oxide layers. These results facilitate the realization of efficient color-selective detection exhibiting a photoconductive gain of 10 7 , obtained using a room-temperature deposition of oxide layers and a solution process of quantum dots. This work offers promising opportunities in emerging applications for color detection with sensitivity, transparency, and flexibility.The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors and demonstrate color-detecting logic gates.

Nanoconstricted structure for current-confined path in current-perpendicular-to-plane spin valves with high magnetoresistance

NASA Astrophysics Data System (ADS)

Fukuzawa, H.; Yuasa, H.; Koi, K.; Iwasaki, H.; Tanaka, Y.; Takahashi, Y. K.; Hono, K.

2005-05-01

We have successfully observed a nanoconstricted structure for current-confined-path (CCP) effect in current-perpendicular-to-plane-giant-magnetoresistance (CPP-GMR) spin valves. By inserting an AlCu nano-oxide layer (NOL) formed by ion-assisted oxidation (IAO) between a pinned layer and a free layer, the MR ratio was increased while maintaining a small area resistance product (RA). The cross-sectional high-resolution transmission electron microscopy image of the sample with RA =380mΩμm2, ΔRA =16mΩμm2, and MR ratio=4.3% showed that an amorphous oxide layer is a main part of the NOL that blocks the electron conduction perpendicular to plane. Some parts of the NOL are punched through crystalline, metallic channels having a diameter of a few nanometers, which are thought to work as nanoconstricted electron conduction paths between the pinned layer and the free layer. Nano-energy-dispersive-x-ray-spectrum analysis also showed that Cu is enriched in the metallic channels, whereas Al is enriched in the amorphous oxide region, indicating that the metallic channel is made of Cu and the oxide is made of Al2O3. The nanoconstricted structure with good segregation between the metallic channel and the oxide layer enables us to realize a large MR ratio in CCP-CPP spin valves.

Perovskite Solar Cells for High-Efficiency Tandems

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGehee, Michael; Buonassisi, Tonio

The first monolithic perovskite/silicon tandem was made with a diffused silicon p-n junction, a tunnel junction made of n ++ hydrogenated amorphous silicon, a titania electron transport layer, a methylammonium lead iodide absorber, and a Spiro-OMeTAD hole transport layer (HTL). The power conversion efficiency (PCE) was only 13.7% due to excessive parasitic absorption of light in the HTL, limiting the matched current density to 11.5 mA/cm 2. Werner et al. 15 raised the PCE to a record 21.2% by switching to a silicon heterojunction bottom cell and carefully tuning layer thicknesses to achieve lower optical loss and a higher currentmore » density of 15.9 mA/cm 2. It is clear from these reports that minimizing parasitic absorption in the window layers is crucial to achieving higher current densities and efficiencies in monolithic tandems. To this end, the window layers through which light first passes before entering the perovskite and silicon absorber materials must be highly transparent. The front electrode must also be conductive to carry current laterally across the top of the device. Indium tin oxide (ITO) is widely utilized as a transparent electrode in optoelectronic devices such as flat-panel displays, smart windows, organic light-emitting diodes, and solar cells due to its high conductivity and broadband transparency. ITO is typically deposited through magnetron sputtering; however, the high kinetic energy of sputtered particles can damage underlying layers. In perovskite solar cells, a sputter buffer layer is required to protect the perovskite and organic carrier extraction layers from damage during sputter deposition. The ideal buffer layer should also be energetically well aligned so as to act as a carrier-selective contact, have a wide bandgap to enable high optical transmission, and have no reaction with the halides in the perovskite. Additionally, this buffer layer should act as a diffusion barrier layer to prevent both organic cation evolution and moisture penetration to overcome the often-reported thermal and environmental instability of metal halide perovskites. Previous perovskite-containing tandems utilized molybdenum oxide (MoO x) as a sputter buffer layer, but this has raised concerns over long-term stability, as the iodide in the perovskite can chemically react with MoO x. Mixed-cation perovskite solar cells have consistently outperformed their single-cation counterparts. The first perovskite device to exceed 20% PCE was fabricated with a mixture of methylammonium (MA) and formamidinium (FA). Recent reports have shown promising results with the introduction of cesium mixtures, enabling high efficiencies with improved photo-, moisture, and thermal stability. The increased moisture and thermal stability are especially important as they broaden the parameter space for processing on top of the perovskite, enabling the deposition of metal oxide contacts through atomic layer deposition (ALD) or chemical vapor deposition (CVD) that may require elevated temperatures or water as a counter reagent. Both titanium dioxide (TiO 2) and tin oxide (SnO 2) have consistently proven to be effective electron-selective contacts for perovskite solar cells and both can be deposited via ALD at temperatures below 150 °C. We introduced a bilayer of SnO 2 and zinc tin oxide (ZTO) that can be deposited by either low-temperature ALD or pulsed-CVD as a window layer with minimal parasitic absorption, efficient electron extraction, and sufficient buffer properties to prevent the organic and perovskite layers from damage during the subsequent sputter deposition of a transparent ITO electrode. We explored pulsed-CVD as a modified ALD process with a continual, rather than purely step-wise, growth component in order to considerably reduce the process time of the SnO 2 deposition process and minimize potential perovskite degradation. These layers, when used in an excellent mixed-cation perovskite solar cell atop a silicon solar cell tuned to the infrared spectrum, enable highly efficient perovskite-silicon tandem solar cells with enhanced thermal and environmental stability.« less

Characterization of oxide scales grown on alloy 310S stainless steel after long term exposure to supercritical water at 500 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Behnamian, Yashar, E-mail: behnamia@ualberta.ca

The oxide scale grown of static capsules made of alloy 310S stainless steel was investigated by exposure to the supercritical water at 500 °C 25 MPa for various exposure times up to 20,000 h. Characterization techniques such as X-ray diffraction, scanning/transmission electron microscopy, energy dispersive spectroscopy, and fast Fourier transformation were employed on the oxide scales. The elemental and phase analyses indicated that long term exposure to the SCW resulted in the formation of scales identified as Fe{sub 3}O{sub 4} (outer layer), Fe-Cr spinel (inner layer), Cr{sub 2}O{sub 3} (transition layer) on the substrate, and Ni-enrichment (chrome depleted region) inmore » the alloy 310S. It was found that the layer thickness and weight gain vs. exposure time followed parabolic law. The oxidation mechanism and scales grown on the alloy 310S stainless steel exposed to SCW are discussed. - Highlights: •Oxidation of alloy 310S stainless steel exposed to SCW (500 °C/25 MPa) •The layer thickness and weight gain vs. exposure time followed parabolic law. •Oxide layers including Fe{sub 3}O{sub 4} (outer), Fe-Cr spinel (inner) and Cr{sub 2}O{sub 3} (transition) •Ni element is segregated by the selective oxidation of Cr.« less

Ternary Oxides in the TiO2-ZnO System as Efficient Electron-Transport Layers for Perovskite Solar Cells with Efficiency over 15.

PubMed

Yin, Xiong; Xu, Zhongzhong; Guo, Yanjun; Xu, Peng; He, Meng

2016-11-02

Perovskite solar cells, which utilize organometal-halide perovskites as light-harvesting materials, have attracted great attention due to their high power conversion efficiency (PCE) and potentially low cost in fabrication. A compact layer of TiO 2 or ZnO is generally applied as electron-transport layer (ETL) in a typical perovskite solar cell. In this study, we explored ternary oxides in the TiO 2 -ZnO system to find new materials for the ETL. Compact layers of titanium zinc oxides were readily prepared on the conducting substrate via spray pyrolysis method. The optical band gap, valence band maximum and conduction band minimum of the ternary oxides varied significantly with the ratio of Ti to Zn, surprisingly, in a nonmonotonic way. When a zinc-rich ternary oxide was applied as ETL for the device, a PCE of 15.10% was achieved, comparable to that of the device using conventional TiO 2 ETL. Interestingly, the perovskite layer deposited on the zinc-rich ternary oxide is stable, in sharp contrast with that fabricated on a ZnO layer, which will turn into PbI 2 readily when heated. These results indicate that potentially new materials with better performance can be found for ETL of perovskite solar cells in ternary oxides, which deserve more exploration.

Biogenic precipitation of manganese oxides and enrichment of heavy metals at acidic soil pH

NASA Astrophysics Data System (ADS)

Mayanna, Sathish; Peacock, Caroline L.; Schäffner, Franziska; Grawunder, Anja; Merten, Dirk; Kothe, Erika; Büchel, Georg

2014-05-01

The precipitation of biogenic Mn oxides at acidic pH is rarely reported and poorly understood, compared to biogenic Mn oxide precipitation at near neutral conditions. Here we identified and investigated the precipitation of biogenic Mn oxides in acidic soil, and studied their role in the retention of heavy metals, at the former uranium mining site of Ronneburg, Germany. The site is characterized by acidic pH, low carbon content and high heavy metal loads including rare earth elements. Specifically, the Mn oxides were present in layers identified by detailed soil profiling and within these layers pH varied from 4.7 to 5.1, Eh varied from 640 to 660 mV and there were enriched total metal contents for Ba, Ni, Co, Cd and Zn in addition to high Mn levels. Using electron microprobe analysis, synchrotron X-ray diffraction and X-ray absorption spectroscopy, we identified poorly crystalline birnessite (δ-MnO2) as the dominant Mn oxide in the Mn layers, present as coatings covering and cementing quartz grains. With geochemical modelling we found that the environmental conditions at the site were not favourable for chemical oxidation of Mn(II), and thus we performed 16S rDNA sequencing to isolate the bacterial strains present in the Mn layers. Bacterial phyla present in the Mn layers belonged to Firmicutes, Actinobacteria and Proteobacteria, and from these phyla we isolated six strains of Mn(II) oxidizing bacteria and confirmed their ability to oxidise Mn(II) in the laboratory. The biogenic Mn oxide layers act as a sink for metals and the bioavailability of these metals was much lower in the Mn layers than in adjacent layers, reflecting their preferential sorption to the biogenic Mn oxide. In this presentation we will report our findings, concluding that the formation of natural biogenic poorly crystalline birnessite can occur at acidic pH, resulting in the formation of a biogeochemical barrier which, in turn, can control the mobility and bioavailability of heavy metals in acidic soil environments.

Carbon aerogels by pyrolysis of TEMPO-oxidized cellulose

NASA Astrophysics Data System (ADS)

Zhang, Sizhao; Feng, Jian; Feng, Junzong; Jiang, Yonggang; Ding, Feng

2018-05-01

Although carbon aerogels derived from naturally occurring materials have been developed extensively, a reasonable synthetic approach using cellulose-resource remains unclear. Here, we report a strategy to prepare carbon aerogels originated from cellulose position-selectively oxidized by TEMPO-oxidized process. Contrary to non-TEMPO-oxidized cellulose-derived carbon aerogels (NCCA) with relative loose structure, TEMPO-oxidized cellulose-derived carbon aerogels (TCCA) with tight fibrillar-continuous network are monitored, suggesting the importance of TEMPO-oxidized modification towards creating the architecture of subsequently produced carbon aerogels. TCCA endows a higher BET area despite owning slightly dense bulk density comparing with that of NCCA. The structural texture of TCCA could be maintained in a way in comparison to TEMPO-oxidized cellulose-derived aerogel, due to the integration and aggregation effect by losing the electric double layer repulsion via ionization of the surface carboxyl groups. FTIR and XPS analyses signify the evidence of non-functionalized carbon-skeleton network formation in terms of TCCA. Further, the mechanism concerning the creation of carbon aerogels is also established. These findings not only provide new insights into the production of carbon aerogels but also open up a new opportunity in the field of functional carbon materials.

Superconducting wires and methods of making thereof

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xingchen; Sumption, Michael D.; Peng, Xuan

Disclosed herein are superconducting wires. The superconducting wires can comprise a metallic matrix and at least one continuous subelement embedded in the matrix. Each subelement can comprise a non-superconducting core, a superconducting layer coaxially disposed around the non-superconducting core, and a barrier layer coaxially disposed around the superconducting layer. The superconducting layer can comprise a plurality of Nb.sub.3Sn grains stabilized by metal oxide particulates disposed therein. The Nb.sub.3Sn grains can have an average grain size of from 5 nm to 90 nm (for example, from 15 nm to 30 nm). The superconducting wire can have a high-field critical current densitymore » (J.sub.c) of at least 5,000 A/mm.sup.2 at a temperature of 4.2 K in a magnetic field of 12 T. Also described are superconducting wire precursors that can be heat treated to prepare superconducting wires, as well as methods of making superconducting wires.« less

Perovskite solar cells with CuSCN hole extraction layers yield stabilized efficiencies greater than 20%

NASA Astrophysics Data System (ADS)

Arora, Neha; Dar, M. Ibrahim; Hinderhofer, Alexander; Pellet, Norman; Schreiber, Frank; Zakeeruddin, Shaik Mohammed; Grätzel, Michael

2017-11-01

Perovskite solar cells (PSCs) with efficiencies greater than 20% have been realized only with expensive organic hole-transporting materials. We demonstrate PSCs that achieve stabilized efficiencies exceeding 20% with copper(I) thiocyanate (CuSCN) as the hole extraction layer. A fast solvent removal method enabled the creation of compact, highly conformal CuSCN layers that facilitate rapid carrier extraction and collection. The PSCs showed high thermal stability under long-term heating, although their operational stability was poor. This instability originated from potential-induced degradation of the CuSCN/Au contact. The addition of a conductive reduced graphene oxide spacer layer between CuSCN and gold allowed PSCs to retain >95% of their initial efficiency after aging at a maximum power point for 1000 hours under full solar intensity at 60°C. Under both continuous full-sun illumination and thermal stress, CuSCN-based devices surpassed the stability of spiro-OMeTAD-based PSCs.

Multilayered thermal insulation formed of zirconia bonded layers of zirconia fibers and metal oxide fibers and method for making same

DOEpatents

Wrenn, Jr., George E.; Holcombe, Jr., Cressie E.

1988-01-01

A multilayered thermal insulating composite is formed of a first layer of zirconia-bonded zirconia fibers for utilization near the hot phase or surface of a furnace or the like. A second layer of zirconia-bonded metal oxide fibers is attached to the zirconia fiber layer by a transition layer formed of intermingled zirconia fibers and metal oxide fibers. The thermal insulation is fabricated by vacuum molding with the layers being sequentially applied from aqueous solutions containing the fibers to a configured mandrel. A portion of the solution containing the fibers forming the first layer is intermixed with the solution containing the fibers of the second layer for forming the layer of mixed fibers. The two layers of fibers joined together by the transition layer are saturated with a solution of zirconium oxynitrate which provides a zirconia matrix for the composite when the fibers are sintered together at their nexi.

Multilayered thermal insulation formed of zirconia bonded layers of zirconia fibers and metal oxide fibers and method for making same

DOEpatents

Wrenn, G.E. Jr.; Holcombe, C.E. Jr.

1988-09-13

A multilayered thermal insulating composite is formed of a first layer of zirconia-bonded zirconia fibers for utilization near the hot phase or surface of a furnace or the like. A second layer of zirconia-bonded metal oxide fibers is attached to the zirconia fiber layer by a transition layer formed of intermingled zirconia fibers and metal oxide fibers. The thermal insulation is fabricated by vacuum molding with the layers being sequentially applied from aqueous solutions containing the fibers to a configured mandrel. A portion of the solution containing the fibers forming the first layer is intermixed with the solution containing the fibers of the second layer for forming the layer of mixed fibers. The two layers of fibers joined together by the transition layer are saturated with a solution of zirconium oxynitrate which provides a zirconia matrix for the composite when the fibers are sintered together at their nexi.

Molecular orbital imaging of cobalt phthalocyanine on native oxidized copper layers using STM.

PubMed

Guo, Qinmin; Huang, Min; Qin, Zhihui; Cao, Gengyu

2012-07-01

To observe molecular orbitals using scanning tunneling microscopy, well-ordered oxidized layers on Cu(001) were fabricated to screen the individual adsorbed cobalt phthalocyanine (CoPc) molecules from the electronic influence of the metal surface. Scanning tunneling microscope images of the molecule on this oxidized layer show similarities to the orbital distribution of the free molecule. The good match between the differential conductance mapping images and the calculated charge distribution at energy levels corresponding to the frontier orbitals of CoPc provides more evidence of the screening of the oxidized layer from interactions between the metal surface and supported molecules. Copyright © 2012 Elsevier B.V. All rights reserved.

Improving the oxidation resistance of 316L stainless steel in simulated pressurized water reactor primary water by electropolishing treatment

NASA Astrophysics Data System (ADS)

Han, Guangdong; Lu, Zhanpeng; Ru, Xiangkun; Chen, Junjie; Xiao, Qian; Tian, Yongwu

2015-12-01

The oxidation behavior of 316L stainless steel specimens after emery paper grounding, mechanical polishing, and electropolishing were investigated in simulated pressurized water reactor primary water at 310 °C for 120 and 500 h. Electropolishing afforded improved oxidation resistance especially during the early immersion stages. Duplex oxide films comprising a coarse Fe-rich outer layer and a fine Cr-rich inner layer formed on all specimens after 500 h of immersion. Only a compact layer was observed on the electropolished specimen after 120 h of immersion. The enrichment of chromium in the electropolished layer contributed to the passivity and protectiveness of the specimen.

Conversion coatings prepared or treated with calcium hydroxide solutions

NASA Technical Reports Server (NTRS)

Maxey, Jason (Inventor); Nelson, Carl (Inventor); Eylem, Cahit (Inventor); Minevski, Zoran (Inventor); Clarke, Eric (Inventor)

2002-01-01

A conversion coating process that forms a stable and corrosion-resistant oxide layer on metal or metal oxide substrates or layers. Particularly, the conversion coating process involves contacting the metal or metal oxide substrate or layer with the aqueous calcium hydroxide solutions in order to convert the surface of the substrate to a stable metal oxide layer or coating. According to the present invention, the calcium hydroxide solution is prepared by removing carbon dioxide from water or an aqueous solution before introducing the calcium hydroxide. In this manner, formation of calcium carbonate particles is avoided and the porosity of the conversion coating produced by the calcium hydroxide solution is reduced to below about 1%.

Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same

DOEpatents

Resnick, Paul J.; Langlois, Eric

2015-12-01

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode

DOEpatents

Resnick, Paul J.; Langlois, Eric

2014-08-26

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Observations on the oxidation of Mn-modified Ni-base Haynes 230 alloy under SOFC exposure conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Z Gary; Xia, Gordon; Stevenson, Jeffry W.

2005-07-01

The commercial Ni-base Haynes 230 alloy (Ni-Cr-Mo-W-Mn) was modified with two increased levels of Mn (1 and 2 wt per cent) and evaluated for its oxidation resistance under simulated SOFC interconnect exposure conditions. Oxidation rate, oxide morphology, oxide conductivity and thermal expansion were measured and compared with commercial Haynes 230. It was observed that additions of higher levels of Mn to the bulk alloy facilitated the formation of a bi-layered oxide scale that was comprised of an outer M3O4 (M=Mn, Cr, Ni) spinel-rich layer at the oxide – gas interface over a Cr2O3-rich sub-layer at the metal – oxide interface.more » The modified alloys showed higher oxidation rates and the formation of thicker oxide scales compared to the base alloy. The formation of a spinel-rich top layer improved the scale conductivity, especially during the early stages of the oxidation, but the higher scale growth rate resulted in an increase in the area-specific electrical resistance over time. Due to their face-centered cubic crystal structure, both commercial and modified alloys demonstrated a coefficient of thermal expansion that was higher than that of typical anode-supported and electrolyte-supported SOFCs.« less

Plasma electrolytic oxidation of Titanium Aluminides

NASA Astrophysics Data System (ADS)

Morgenstern, R.; Sieber, M.; Grund, T.; Lampke, T.; Wielage, B.

2016-03-01

Due to their outstanding specific mechanical and high-temperature properties, titanium aluminides exhibit a high potential for lightweight components exposed to high temperatures. However, their application is limited through their low wear resistance and the increasing high-temperature oxidation starting from about 750 °C. By the use of oxide ceramic coatings, these constraints can be set aside and the possible applications of titanium aluminides can be extended. The plasma electrolytic oxidation (PEO) represents a process for the generation of oxide ceramic conversion coatings with high thickness. The current work aims at the clarification of different electrolyte components’ influences on the oxide layer evolution on alloy TNM-B1 (Ti43.5Al4Nb1Mo0.1B) and the creation of compact and wear resistant coatings. Model experiments were applied using a ramp-wise increase of the anodic potential in order to show the influence of electrolyte components on the discharge initiation and the early stage of the oxide layer growth. The production of PEO layers with technically relevant thicknesses close to 100 μm was conducted in alkaline electrolytes with varying amounts of Na2SiO3·5H2O and K4P2O7 under symmetrically pulsed current conditions. Coating properties were evaluated with regard to morphology, chemical composition, hardness and wear resistance. The addition of phosphates and silicates leads to an increasing substrate passivation and the growth of compact oxide layers with higher thicknesses. Optimal electrolyte compositions for maximum coating hardness and thickness were identified by statistical analysis. Under these conditions, a homogeneous inner layer with low porosity can be achieved. The frictional wear behavior of the compact coating layer is superior to a hard anodized layer on aluminum.

Collector-up aluminum gallium arsenide/gallium arsenide heterojunction bipolar transistors using oxidized aluminum arsenide for current confinement

NASA Astrophysics Data System (ADS)

Massengale, Alan Ross

1998-12-01

The discovery in 1990 that the wet thermal oxidation of AlAs can create a stable native oxide has added a new constituent, AlAs-oxide, to the AlGaAs/GaAs materials system. Native oxides of high Al mole-fraction AlGaAs are being used to confine electrical and/or optical fields in many types of electronic and optoelectronic structures with very promising results. Among these devices are collector-up heterojunction bipolar transistors (HBTs). Collector-up HBTs offer a means to reduce base-collector capacitance relative to their emitter-up counterparts, and thus to improve device performance. A novel method for fabricating collector-up AlGaAs/GaAs HBTs where an AlAs layer is inserted into the emitter layer and is oxidized in water vapor at 450sp°C has been developed. The resulting AlAs-oxide serves as a current confining layer that constricts collector current flow to the intrinsic portion of the device. Compared to previous methods of fabricating these devices, the process of converting AlAs into an insulator requires only one growth, and does not suffer from implant damage in the base. Because the lateral oxidation of AlAs is a process that proceeds at rates of microns per minute, one of the major challenges facing its implementation is the ability to accurately control the oxidation rate over the wafer, and from one wafer to the next. In the course of work on the oxidation of AlAs, a method to lithographically form lateral oxidation stop layers has been achieved. This technique utilizes impurity induced layer disordering (IILD) in heavily Si-doped buried planes, combined with selective surface patterning and thermal annealing, to create a lateral variation in the Al mole-fraction of the layer to be oxidized.

Thin film photovoltaic cells having increased durability and operating life and method for making same

DOEpatents

Barnett, Allen M.; Masi, James V.; Hall, Robert B.

1980-12-16

A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

Use of chemical mechanical polishing in micromachining

DOEpatents

Nasby, R.D.; Hetherington, D.L.; Sniegowski, J.J.; McWhorter, P.J.; Apblett, C.A.

1998-09-08

A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface. 4 figs.

Improved Thermal Stability of Lithium-Rich Layered Oxide by Fluorine Doping.

PubMed

Kapylou, Andrei; Song, Jay Hyok; Missiul, Aleksandr; Ham, Dong Jin; Kim, Dong Han; Moon, San; Park, Jin Hwan

2018-01-05

The thermal stability of lithium-rich layered oxide with the composition Li(Li 1/6 Ni 1/6 Co 1/6 Mn 1/2 )O 2-x F x (x=0.00 and 0.05) is evaluated for use as a cathode material in lithium-ion batteries. Thermogravimetric analysis, evolved gas analysis, and differential scanning calorimetry show that, upon fluorine doping, degradation of the lithium-rich layered oxides commences at higher temperatures and the exothermic reaction is suppressed. Hot box tests also reveal that the prismatic cell with the fluorine-doped powder does not explode, whereas that with the undoped one explodes at about 135 °C with a sudden temperature increase. XRD analysis indicates that fluorine doping imparts the lithium-rich layered oxide with better thermal stability by mitigating oxygen release at elevated temperatures that cause an exothermic reaction with the electrolyte. The origin of the reduced oxygen release from the fluorinated lithium-rich layered oxide is also discussed. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influences of urea and sodium nitrite on surface coating of plasma electrolytic oxidation

NASA Astrophysics Data System (ADS)

Yeh, Shang-Chun; Tsai, Dah-Shyang; Guan, Sheng-Yong; Chou, Chen-Chia

2015-11-01

Urea and sodium nitrite are generally viewed as nitridation additives in the electrolyte for plasma electrolytic oxidation (PEO) of aluminum alloys. We study the influences of these two convenient chemicals in presence of sodium aluminate and find very different effects on film growth. Urea addition enhances the nitrogen content of PEO layer, diminishes the layer thickness, increases the porosity, interferes with the α-alumina formation, and promotes precipitation in the electrolyte. Hence, the electrolytic urea content ought to be maintained less than 45 g dm-3. On the other hand, sodium nitrite behaves like an oxidation additive, more than a nitridation additive. NaNO2 addition effectively introduces nitrogen in the PEO layer at low concentration, yet the nitrogen content of oxide layer decreases with increasing NaNO2 concentration. The effects of NaNO2, such as increasing layer thickness, reducing porosity, promoting α-alumina formation are attributed to oxidation enhancement, not because of nitridation.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

High resolution structural characterization of giant magnetoresistance structures containing a nano-oxide layer

NASA Astrophysics Data System (ADS)

You, C. Y.; Cerezo, A.; Clifton, P. H.; Folks, L.; Carey, M. J.; Petford-Long, A. K.

2007-07-01

The microstructure and chemistry of a current-perpendicular-to-plane giant magnetoresistance structure containing a nano-oxide layer (NOL) have been studied using a combination of high resolution transmission electron microscopy and three-dimensional atom probe analysis. It was found that the morphology of the NOL changes from a planar layer to discrete particles on annealing, indicating the dominance of surface energy on the morphology evolution. Direct evidence was obtained for significant Mn diffusion from the IrMn antiferromagnetic layer and partitioning to the oxide region during annealing.

Method of making low leakage N-channel SOS transistors utilizing positive photoresist masking techniques

NASA Technical Reports Server (NTRS)

Policastro, Steven G. (Inventor); Woo, Dae-Shik (Inventor)

1983-01-01

A self-aligned method of implanting the edges of NMOS/SOS transistors is described. The method entails covering the silicon islands with a thick oxide layer, applying a protective photoresist layer over the thick oxide layer, and exposing the photoresist layer from the underside of the sapphire substrate thereby using the island as an exposure mask. Only the photoresist on the islands' edges will be exposed. The exposed photoresist is then removed and the thick oxide is removed from the islands edges which are then implanted.

Microwave-assisted synthesis of metal oxide/hydroxide composite electrodes for high power supercapacitors - A review

NASA Astrophysics Data System (ADS)

Faraji, Soheila; Ani, Farid Nasir

2014-10-01

Electrochemical capacitors (ECs), also known as pseudocapacitors or supercapacitors (SCs), is receiving great attention for its potential applications in electric and hybrid electric vehicles because of their ability to store energy, alongside with the advantage of delivering the stored energy much more rapidly than batteries, namely power density. To become primary devices for power supply, supercapacitors must be developed further to improve their ability to deliver high energy and power simultaneously. In this concern, a lot of effort is devoted to the investigation of pseudocapacitive transition-metal-based oxides/hydroxides such as ruthenium oxide, manganese oxide, cobalt oxide, nickel oxide, cobalt hydroxide, nickel hydroxide, and mixed metal oxides/hydroxides such as nickel cobaltite and nickel-cobalt oxy-hydroxides. This is mainly due to the fact that they can produce much higher specific capacitances than typical carbon-based electric double-layer capacitors and electronically conducting polymers. This review presents supercapacitor performance data of metal oxide thin film electrodes by microwave-assisted as an inexpensive, quick and versatile technique. Supercapacitors have established the specific capacitance (Cs) principles, therefore, it is likely that metal oxide films will continue to play a major role in supercapacitor technology and are expected to considerably increase the capabilities of these devices in near future.

Light-Dependent Aerobic Methane Oxidation Reduces Methane Emissions from Seasonally Stratified Lakes

PubMed Central

Oswald, Kirsten; Milucka, Jana; Brand, Andreas; Littmann, Sten; Wehrli, Bernhard; Kuypers, Marcel M. M.; Schubert, Carsten J.

2015-01-01

Lakes are a natural source of methane to the atmosphere and contribute significantly to total emissions compared to the oceans. Controls on methane emissions from lake surfaces, particularly biotic processes within anoxic hypolimnia, are only partially understood. Here we investigated biological methane oxidation in the water column of the seasonally stratified Lake Rotsee. A zone of methane oxidation extending from the oxic/anoxic interface into anoxic waters was identified by chemical profiling of oxygen, methane and δ13C of methane. Incubation experiments with 13C-methane yielded highest oxidation rates within the oxycline, and comparable rates were measured in anoxic waters. Despite predominantly anoxic conditions within the zone of methane oxidation, known groups of anaerobic methanotrophic archaea were conspicuously absent. Instead, aerobic gammaproteobacterial methanotrophs were identified as the active methane oxidizers. In addition, continuous oxidation and maximum rates always occurred under light conditions. These findings, along with the detection of chlorophyll a, suggest that aerobic methane oxidation is tightly coupled to light-dependent photosynthetic oxygen production both at the oxycline and in the anoxic bottom layer. It is likely that this interaction between oxygenic phototrophs and aerobic methanotrophs represents a widespread mechanism by which methane is oxidized in lake water, thus diminishing its release into the atmosphere. PMID:26193458

Fabrication of Aluminum-Based Thermal Radiation Plate for Thermoelectric Module Using Aluminum Anodic Oxidization and Copper Electroplating.

PubMed

Choi, Yi Taek; Bae, Sung Hwa; Son, Injoon; Sohn, Ho Sang; Kim, Kyung Tae; Ju, Young-Wan

2018-09-01

In this study, electrolytic etching, anodic oxidation, and copper electroplating were applied to aluminum to produce a plate on which a copper circuit for a thermoelectric module was formed. An oxide film insulating layer was formed on the aluminum through anodic oxidation, and platinum was coated by sputtering to produce conductivity. Finally, copper electroplating was performed directly on the substrate. In this structure, the copper plating layer on the insulating layer served as a conductive layer in the circuit. The adhesion of the copper plating layer was improved by electrolytic etching. As a result, the thermoelectric module fabricated in this study showed excellent adhesion and good insulation characteristics. It is expected that our findings can contribute to the manufacture of plates applicable to thermoelectric modules with high dissipation performance.

Method of making a ceramic with preferential oxygen reactive layer

NASA Technical Reports Server (NTRS)

Wang, Hongyu (Inventor); Luthra, Krishan Lal (Inventor)

2003-01-01

A method of forming an article. The method comprises forming a silicon-based substrate that is oxidizable by reaction with an oxidant to form at least one gaseous product and applying an intermediate layer/coating onto the substrate, wherein the intermediate layer/coating is oxidizable to a nongaseous product by reaction with the oxidant in preference to reaction of the silicon-containing substrate with the oxidant.

Influence of the domain structure of nano-oxide layers on the transport properties of specular spin valves

NASA Astrophysics Data System (ADS)

Ventura, J.; Sousa, J. B.; Veloso, A.; Freitas, P. P.

2007-05-01

Specular spin valves show enhanced giant magnetoresistive ratio when compared to other simpler, spin valve structures as a result of specular reflection in nano-oxide layers (NOLs) formed by the partial oxidation of the CoFe pinned and free layers. The oxides forming the NOL were recently shown to order antiferromagnetically below T ˜175K. Here we study the training effect in MnIr /CoFe/NOL/CoFe/Cu/CoFe/NOL specular spin valves at low temperatures (15K). We observed that the training effect is related to the nano-oxide layer antiferromagnet ordering and to the evolution of the corresponding domain structure with the number of cycles performed. This allowed us to study the influence of the NOL domain structure on the magnetotransport of specular spin valves.

TEM and AES investigations of the natural surface nano-oxide layer of an AISI 316L stainless steel microfibre.

PubMed

Ramachandran, Dhanya; Egoavil, Ricardo; Crabbe, Amandine; Hauffman, Tom; Abakumov, Artem; Verbeeck, Johan; Vandendael, Isabelle; Terryn, Herman; Schryvers, Dominique

2016-11-01

The chemical composition, nanostructure and electronic structure of nanosized oxide scales naturally formed on the surface of AISI 316L stainless steel microfibres used for strengthening of composite materials have been characterised using a combination of scanning and transmission electron microscopy with energy-dispersive X-ray, electron energy loss and Auger spectroscopy. The analysis reveals the presence of three sublayers within the total surface oxide scale of 5.0-6.7 nm thick: an outer oxide layer rich in a mixture of FeO.Fe 2 O 3 , an intermediate layer rich in Cr 2 O 3 with a mixture of FeO.Fe 2 O 3 and an inner oxide layer rich in nickel. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Method of protecting the surface of a substrate. [by applying aluminide coating

NASA Technical Reports Server (NTRS)

Gedwill, M. A. (Inventor); Grisaffe, S. J.

1974-01-01

The surface of a metallic base system is initially coated with a metallic alloy layer that is ductile and oxidation resistant. An aluminide coating is then applied to the metallic alloy layer. The chemistry of the metallic alloy layer is such that the oxidation resistance of the subsequently aluminized outermost layer is not seriously degraded.

Charge Transport in Low-Temperature Processed Thin-Film Transistors Based on Indium Oxide/Zinc Oxide Heterostructures.

PubMed

Krausmann, Jan; Sanctis, Shawn; Engstler, Jörg; Luysberg, Martina; Bruns, Michael; Schneider, Jörg J

2018-06-20

The influence of the composition within multilayered heterostructure oxide semiconductors has a critical impact on the performance of thin-film transistor (TFT) devices. The heterostructures, comprising alternating polycrystalline indium oxide and zinc oxide layers, are fabricated by a facile atomic layer deposition (ALD) process, enabling the tuning of its electrical properties by precisely controlling the thickness of the individual layers. This subsequently results in enhanced TFT performance for the optimized stacked architecture after mild thermal annealing at temperatures as low as 200 °C. Superior transistor characteristics, resulting in an average field-effect mobility (μ sat. ) of 9.3 cm 2 V -1 s -1 ( W/ L = 500), an on/off ratio ( I on / I off ) of 5.3 × 10 9 , and a subthreshold swing of 162 mV dec -1 , combined with excellent long-term and bias stress stability are thus demonstrated. Moreover, the inherent semiconducting mechanism in such multilayered heterostructures can be conveniently tuned by controlling the thickness of the individual layers. Herein, devices comprising a higher In 2 O 3 /ZnO ratio, based on individual layer thicknesses, are predominantly governed by percolation conduction with temperature-independent charge carrier mobility. Careful adjustment of the individual oxide layer thicknesses in devices composed of stacked layers plays a vital role in the reduction of trap states, both interfacial and bulk, which consequently deteriorates the overall device performance. The findings enable an improved understanding of the correlation between TFT performance and the respective thin-film composition in ALD-based heterostructure oxides.

Ion Implantation-Modified Fluorine-Doped Tin Oxide by Zirconium with Continuously Tunable Work Function and Its Application in Perovskite Solar Cells.

PubMed

Han, Dong; Wu, Cuncun; Zhao, Yunbiao; Chen, Yi; Xiao, Lixin; Zhao, Ziqiang

2017-12-06

In recent years, perovskite solar cells have drawn a widespread attention. As an electrode material, fluorine-doped tin oxide (FTO) is widely used in various kinds of solar cells. However, the relatively low work function (WF) (∼4.6 eV) limits its application. The potential barrier between the transparent conductive oxide electrode and the hole transport layer (HTL) in inverted perovskite solar cells results in a decrease in device performance. In this paper, we propose a method to adjust WF of FTO by implanting zirconium ions into the FTO surface. The WF of FTO can be precisely and continuously tuned between 4.59 and 5.55 eV through different dopant concentration of zirconium. In the meantime, the modified FTO, which had a WF of 5.1 eV to match well the highest occupied molecular orbital energy level of poly(3,4-ethylenedioxylenethiophene):polystyrene sulfonate, was used as the HTL in inverted planar perovskite solar cells. Compared with the pristine FTO electrode-based device, the open circuit voltage increased from 0.82 to 0.91 V, and the power conversion efficiency increased from 11.6 to 14.0%.

Electrochemical tuning of vertically aligned MoS2 nanofilms and its application in improving hydrogen evolution reaction

PubMed Central

Wang, Haotian; Lu, Zhiyi; Xu, Shicheng; Kong, Desheng; Cha, Judy J.; Zheng, Guangyuan; Hsu, Po-Chun; Yan, Kai; Bradshaw, David; Prinz, Fritz B.; Cui, Yi

2013-01-01

The ability to intercalate guest species into the van der Waals gap of 2D layered materials affords the opportunity to engineer the electronic structures for a variety of applications. Here we demonstrate the continuous tuning of layer vertically aligned MoS2 nanofilms through electrochemical intercalation of Li+ ions. By scanning the Li intercalation potential from high to low, we have gained control of multiple important material properties in a continuous manner, including tuning the oxidation state of Mo, the transition of semiconducting 2H to metallic 1T phase, and expanding the van der Waals gap until exfoliation. Using such nanofilms after different degree of Li intercalation, we show the significant improvement of the hydrogen evolution reaction activity. A strong correlation between such tunable material properties and hydrogen evolution reaction activity is established. This work provides an intriguing and effective approach on tuning electronic structures for optimizing the catalytic activity. PMID:24248362

Adsorption Isotherm Studies of Methyl Bromide on MgO

NASA Astrophysics Data System (ADS)

Harper, Tj; Burns, Te; Larese, Jz

2003-03-01

This research involves the adsorption of methyl bromine and methane onto highly-uniform magnesium oxide powder. Methyl bromide was condensed onto the MgO substrate at temperatures between 175 K and 179 K. The layering behavior of the gas molecules was studied by a series of vapor pressure isotherms, using a high-accuracy, computer-controlled system. The isotherms clearly show first layer formation at all temperatures, followed by a continuous layer growth to saturation. Isotherms will be presented and future work discussed. TJH and TEB research sponsored by the Department of Energy EPSCOR Grant No. DE-FG02-01ER45895. JZL research sponsored by start-up funds from the University of Tennessee - Knoxville and by the Division of Materials Sciences, Office of Basic Energy Sciences, U.S. Department of Energy, under contract No. DE-AC05-00OR22725 with Oak Ridge National Laboratory, managed and operated by UT-Battelle, LLC.

A stable downward continuation of airborne magnetic data: A case study for mineral prospectivity mapping in Central Iran

NASA Astrophysics Data System (ADS)

Abedi, Maysam; Gholami, Ali; Norouzi, Gholam-Hossain

2013-03-01

Previous studies have shown that a well-known multi-criteria decision making (MCDM) technique called Preference Ranking Organization METHod for Enrichment Evaluation (PROMETHEE II) to explore porphyry copper deposits can prioritize the ground-based exploratory evidential layers effectively. In this paper, the PROMETHEE II method is applied to airborne geophysical (potassium radiometry and magnetometry) data, geological layers (fault and host rock zones), and various extracted alteration layers from remote sensing images. The central Iranian volcanic-sedimentary belt is chosen for this study. A stable downward continuation method as an inverse problem in the Fourier domain using Tikhonov and edge-preserving regularizations is proposed to enhance magnetic data. Numerical analysis of synthetic models show that the reconstructed magnetic data at the ground surface exhibits significant enhancement compared to the airborne data. The reduced-to-pole (RTP) and the analytic signal filters are applied to the magnetic data to show better maps of the magnetic anomalies. Four remote sensing evidential layers including argillic, phyllic, propylitic and hydroxyl alterations are extracted from Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) images in order to map the altered areas associated with porphyry copper deposits. Principal component analysis (PCA) based on six Enhanced Thematic Mapper Plus (ETM+) images is implemented to map iron oxide layer. The final mineral prospectivity map based on desired geo-data set indicates adequately matching of high potential zones with previous working mines and copper deposits.

Method for making an aluminum or copper substrate panel for selective absorption of solar energy

NASA Technical Reports Server (NTRS)

Roberts, M. L.; Sharpe, M. H.; Krupnick, A. C. (Inventor)

1978-01-01

A panel is described for selectively absorbing solar energy comprising an aluminum substrate. A zinc layer was covered by a layer of nickel and an outer layer of solar energy absorbing nickel oxide or a copper substrate with a nickel layer. A layer of solar energy absorbing nickel oxide distal from the copper substrate was included. A method for making these panels is disclosed.

Residual Stresses Modeled in Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Freborg, A. M.; Ferguson, B. L.; Petrus, G. J.; Brindley, W. J.

1998-01-01

Thermal barrier coating (TBC) applications continue to increase as the need for greater engine efficiency in aircraft and land-based gas turbines increases. However, durability and reliability issues limit the benefits that can be derived from TBC's. A thorough understanding of the mechanisms that cause TBC failure is a key to increasing, as well as predicting, TBC durability. Oxidation of the bond coat has been repeatedly identified as one of the major factors affecting the durability of the ceramic top coat during service. However, the mechanisms by which oxidation facilitates TBC failure are poorly understood and require further characterization. In addition, researchers have suspected that other bond coat and top coat factors might influence TBC thermal fatigue life, both separately and through interactions with the mechanism of oxidation. These other factors include the bond coat coefficient of thermal expansion, the bond coat roughness, and the creep behavior of both the ceramic and bond coat layers. Although it is difficult to design an experiment to examine these factors unambiguously, it is possible to design a computer modeling "experiment" to examine the action and interaction of these factors, as well as to determine failure drivers for TBC's. Previous computer models have examined some of these factors separately to determine their effect on coating residual stresses, but none have examined all the factors concurrently. The purpose of this research, which was performed at DCT, Inc., in contract with the NASA Lewis Research Center, was to develop an inclusive finite element model to characterize the effects of oxidation on the residual stresses within the TBC system during thermal cycling as well as to examine the interaction of oxidation with the other factors affecting TBC life. The plasma sprayed, two-layer thermal barrier coating that was modeled incorporated a superalloy substrate, a NiCrAlY bond coat, and a ZrO2-8 wt % Y2O3 ceramic top coat. We examined the effect on stress during burner rig thermal cycling of the following independent variables: creep in the bond coat and top coat, oxidation, bond coat coefficient of thermal expansion, number of thermal cycles, and interfacial roughness. All these factors were suspected of influencing TBC failure. The model showed that all the material properties studied had a significant effect on the coating's residual stresses if the interface of the bond coat was rough. Bond coat expansion, bond coat oxidation, and bond coat creep had the highest effect on coating stresses, and these were highly interactive. The model also showed that the mechanism of stress generation during thermal cycling changed with the number of thermal cycles. Bond coat and top coat creep dominated stress generation during early thermal cycles, greatly increasing delamination stresses at the peaks of the bond coat. Therefore, creep is the prime driver for delamination cracking early in life, but cracking is limited to the bond coat peak region. Oxidation of the bond coat, on the other hand, tended to dominate stress generation during later cycles by greatly increasing delamination stresses over bond coat valleys. These results indicate that oxidation is the driver for the continued cracking necessary to cause ceramic layer spallation.

The asymptotic structure of nonpremixed methane-air flames with oxidizer leakage of order unity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seshadri, K.; Ilincic, N.

1995-04-01

The asymptotic structure of nonpremixed methane-air flames is analyzed using a reduced three-step mechanism. The three global steps of this reduced mechanism are similar to those used in a previous analysis. The rates of the three steps are related to the rates of the elementary reactions appearing in the C{sub 1}-mechanism for oxidation of methane. The present asymptotic analysis differs from the previous analysis in that oxygen is presumed to leak from the reaction zone to the leading order. Chemical reactions are presumed to occur in three asymptotically thin layers: the fuel-consumption layer, the nonequilibrium layer for the water-gas shiftmore » reaction and the oxidation layer. The structure of the fuel-consumption layer is presumed to be identical to that analyzed previously and in this layer the fuel reacts with the radicals to form primarily CO and H{sub 2} and some CO{sub 2} and H{sub 2}O In the oxidation layer the CO and H{sub 2} formed in the fuel-consumption layer are oxidized to CO{sub 2} and H{sub 2}O. The present analysis of the oxidation layer is simpler than the previous analysis because the variation in the values of the concentration of oxygen can be neglected to the leading order and this is a better representation of the flame structure in the vicinity of the critical conditions of extinction. The predictions of the critical conditions of extinction of the present model are compared with the predictions of previous models. It is anticipated that the present simple model can be easily extended to more complex problems such as pollutant formation in flames or chemical inhibition of flames.« less

Light Trapping for Silicon Solar Cells: Theory and Experiment

NASA Astrophysics Data System (ADS)

Zhao, Hui

Crystalline silicon solar cells have been the mainstream technology for photovoltaic energy conversion since their invention in 1954. Since silicon is an indirect band gap material, its absorption coefficient is low for much of the solar spectrum, and the highest conversion efficiencies are achieved only in cells that are thicker than about 0.1 mm. Light trapping by total internal reflection is important to increase the optical absorption in silicon layers, and becomes increasingly important as the layers are thinned. Light trapping is typically characterized by the enhancement of the absorptance of a solar cell beyond the value for a single pass of the incident beam through an absorbing semiconductor layer. Using an equipartition argument, in 1982 Yablonovitch calculated an enhancement of 4n2 , where n is the refractive index. We have extracted effective light-trapping enhancements from published external quantum efficiency spectra in several dozen silicon solar cells. These results show that this "thermodynamic" enhancement has never been achieved experimentally. The reasons for incomplete light trapping could be poor anti-reflection coating, inefficient light scattering, and parasitic absorption. We report the light-trapping properties of nanocrystalline silicon nip solar cells deposited onto two types of Ag/ZnO backreflectors at United Solar Ovonic, LLC. We prepared the first type by first making silver nanparticles onto a stainless steel substrate, and then overcoating the nanoparticles with a second silver layer. The second type was prepared at United Solar using a continuous silver film. Both types were then overcoated with a ZnO film. The root mean square roughness varied from 27 to 61 nm, and diffuse reflectance at 1000 nm wavelength varied from 0.4 to 0.8. The finished cells have a thin, indium-tin oxide layer on the top that acts as an antireflection coating. For both backreflector types, the short-circuit photocurrent densities J SC for solar illumination were about 25 mA/cm2 for 1.5 micron cells. We also measured external quantum efficiency spectra and optical reflectance spectra, which were only slightly affected by the back reflector morphology. We performed a thermodynamic calculation for the optical absorptance in the silicon layer and the top oxide layer to explain the experimental results; the calculation is an extension of previous work by Stuart and Hall that incorporates the antireflection properties and absorption in the top oxide film. From our calculations and experimental measurements, we concluded that parasitic absorption in this film is the prominent reason for incomplete light trapping in these cells. To reduce the optical parasitic loss in the top oxide layer, we propose a bilayer design, and show the possible benefits to the photocurrent density.

Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.

PubMed

Yu, Xinge; Zhou, Nanjia; Smith, Jeremy; Lin, Hui; Stallings, Katie; Yu, Junsheng; Marks, Tobin J; Facchetti, Antonio

2013-08-28

We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 °C are ~5tmex larger (~2.6 cm(2)/(V s)) than those of single-layer IGO TFTs (~0.5 cm(2)/(V s)), reaching values comparable to single-layer combustion-processed In2O3 TFTs (~3.2 cm(2)/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ~0.0 V, and the current on/off ratio is significantly enhanced to ~1 × 10(8) (vs ~1 × 10(4) for In2O3). The microstructure and morphology of the In2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.

Patterning and reduction of graphene oxide using femtosecond-laser irradiation

NASA Astrophysics Data System (ADS)

Kang, SeungYeon; Evans, Christopher C.; Shukla, Shobha; Reshef, Orad; Mazur, Eric

2018-07-01

Graphene has emerged as one of the most versatile materials ever discovered due to its extraordinary electronic, optical, thermal, and mechanical properties. However, device fabrication is a well-known challenge and requires novel fabrication methods to realize the complex integration of graphene-based devices. Here, we demonstrate direct laser writing of reduced graphene oxide using femtosecond-laser irradiation at λ = 795 nm. We perform a systematic study of the reduction process of graphene oxide to graphene by varying both the laser fluence and the pulse repetition rate. Our observations show that the reduction has both thermal and non-thermal features, and suggest that we can achieve better resolution and conductivity using kHz pulse trains than using MHz pulse trains or a continuous wave laser. Our reduced graphene oxide lines written at 10-kHz exhibit a 5 order-of-magnitude decrease in resistivity compared to a non-irradiated control sample. This study provides new insight into the reduction process of graphene oxide and opens doors to achieving a high degree of flexibility and control in the fabrication of graphene layers.

Native oxide formation on pentagonal copper nanowires: A TEM study

NASA Astrophysics Data System (ADS)

Hajimammadov, Rashad; Mohl, Melinda; Kordas, Krisztian

2018-06-01

Hydrothermally synthesized copper nanowires were allowed to oxidize in air at room temperature and 30% constant humidity for the period of 22 days. The growth of native oxide layer was followed up by high-resolution transmission electron microscopy and diffraction to reveal and understand the kinetics of the oxidation process. Copper oxides appear in the form of differently oriented crystalline phases around the metallic core as a shell-like layer (Cu2O) and as nanoscopic islands (CuO) on the top of that. Time dependent oxide thickness data suggests that oxidation follows the field-assisted growth model at the beginning of the process, as practically immediately an oxide layer of ∼2.8 nm thickness develops on the surface. However, after this initial rapid growth, the local field attenuates and the classical parabolic diffusion limited growth plays the main role in the oxidation. Because of the single crystal facets on the side surface of penta-twinned Cu nanowires, the oxidation rate in the diffusion limited regime is lower than in polycrystalline films.

Low-damage direct patterning of silicon oxide mask by mechanical processing

PubMed Central

2014-01-01

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding. In contrast, the local oxide pattern formed (due to mechanochemical reaction of the silicon) by tip sliding at higher load was found to have higher etching resistance than that of unprocessed areas. The profile changes caused by the etching of the mechanically pre-processed areas with the KOH solution were also investigated. First, protuberances were processed by diamond tip sliding at lower and higher stresses than that of the shearing strength. Mechanical processing at low load and scanning density to remove the natural oxide layer was then performed. The KOH solution selectively etched the low load and scanning density processed area first and then etched the unprocessed silicon area. In contrast, the protuberances pre-processed at higher load were hardly etched. The etching resistance of plastic deformed layers was decreased, and their etching rate was increased because of surface damage induced by the pre-processing. These results show that etching depth can be controlled by controlling the etching time through natural oxide layer removal and mechanochemical oxide layer formation. These oxide layer removal and formation processes can be exploited to realize low-damage mask patterns. PMID:24948891

Buried Oxide Densification for Low Power, Low Voltage CMOS Applications

NASA Technical Reports Server (NTRS)

Allen, L. P.; Anc, M. J.; Dolan, B.; Jiao, J.; Guss, B.; Seraphin, S.; Liu, S. T.; Jenkins, W.

1998-01-01

Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.

Synthesizing new types of ultrathin 2D metal oxide nanosheets via half-successive ion layer adsorption and reaction

NASA Astrophysics Data System (ADS)

Gao, Linjie; Li, Yaguang; Xiao, Mu; Wang, Shufang; Fu, Guangsheng; Wang, Lianzhou

2017-06-01

Two-dimensional (2D) metal oxide nanosheets have demonstrated their great potential in a broad range of applications. The existing synthesis strategies are mainly preparing 2D nanosheets from layered and specific transition metal oxides. How to prepare the other types of metal oxides as ultrathin 2D nanosheets remains unsolved, especially for metal oxides containing alkali, alkaline earth metal, and multiple metal elements. Herein, we developed a half-successive ion layer adsorption and reaction (SILAR) method, which could synthesize those types of metal oxides as ultrathin 2D nanosheets. The synthesized 2D metal oxides nanosheets are within 1 nm level thickness and 500 m2 · g-1 level surface area. This method allows us to develop many new types of ultrathin 2D metal oxides nanosheets that have never been prepared before.

Effects of pretreatment processes for Zr electrorefining of oxidized Zircaloy-4 cladding tubes

NASA Astrophysics Data System (ADS)

Hwa Lee, Chang; Lee, Yoo Lee; Jeon, Min Ku; Choi, Yong Taek; Kang, Kweon Ho; Park, Geun Il

2014-06-01

The effect of pretreatment processes for the Zr electrorefining of oxidized Zircaloy-4 cladding tubes is examined in LiCl-KCl-ZrCl4 molten salts at 500 °C. The cyclic voltammetries reveal that the Zr dissolution kinetics is highly dependent on the thickness of a Zr oxide layer formed at 500 °C under air atmosphere. For the Zircaloy-4 tube covered with a 1 μm thick oxide layer, the Zr dissolution process is initiated from a non-stoichiometric Zr oxide surface through salt treatment at an open circuit potential in the molten salt electrolyte. The Zr dissolution of the samples in the middle range of oxide layer thickness appears to be more effectively derived by the salt treatment coupled with an anodic potential application at an oxidation potential of Zr. A modification of the process scheme offers an applicability of Zr electrorefining for the treatment of oxidized cladding hull wastes.

The oxidation of Inconel-690 alloy at 600 K in air

NASA Astrophysics Data System (ADS)

Allen, G. C.; Dyke, J. M.; Harris, S. J.; Morris, A.

1988-03-01

The alloy Inconel-690 has been oxidised at 600 K in air for periods varying between 30 s and 120 h and the composition of the oxide layer formed examined by scanning Auger microscopy (SAM), scanning electron microscopy with energy dispersive analysis of X-rays (SEM/EDAX), secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Analysis of the spectra revealed the formation of a layer of essentially α-Cr 2O 3 at room temperature. Oxidation at 600 K resulted in the formation of a duplex oxide film with a thin outer layer of iron(III) oxide. Beneath this was a mixed chromium, iron, nickel oxide. Following 8 h of oxidation at 600 K the oxide was approximately 10 nm thick but this was found to vary with the physical surface of the underlying alloy which also appeared to affect the relative rates of diffusion of the ionic species during film growth.

New CVD-based method for the growth of high-quality crystalline zinc oxide layers

NASA Astrophysics Data System (ADS)

Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

2016-07-01

High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

Perform Tests and Document Results and Analysis of Oxide Layer Effects and Comparisons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins, E. D.; DelCul, G. D.; Spencer, B. B.

2014-08-30

During the initial feasibility test using actual used nuclear fuel (UNF) cladding in FY 2012, an incubation period of 30–45 minutes was observed in the initial dry chlorination. The cladding hull used in the test had been previously oxidized in a dry air oxidation pretreatment prior to removal of the fuel. The cause of this incubation period was attributed to the resistance to chlorination of an oxide layer imparted by the dry oxidation pretreatment on the cladding. Subsequently in 2013, researchers at the Korea Atomic Energy Institute (KAERI) reported on their chlorination study [R1] on ~9-gram samples of unirradiated ZirloTMmore » cladding tubes that had been previously oxidized in air at 500oC for various time periods to impart oxide layers of varying thickness. In early 2014, discussions with Indefinite Delivery, Indefinite Quantity (IDIQ) contracted technical consultants from Westinghouse described their previous development (and patents) [R2] on methods of chemical washing to remove some or all of the hydrous oxide layer imparted on UNF cladding during irradiation in light water reactors (LWRs) . Thus, the Oak Ridge National Laboratory (ORNL) study, described herein, was planned to extend the KAERI study on the effects of anhydrous oxide layers, but on larger ~100-gram samples of unirradiated zirconium alloy cladding tubes, and to investigate the effects of various methods of chemical pretreatment prior to chlorination with 100% chlorine on the average reaction rates and Cl2 usage efficiencies.« less

Heterojunction PbS nanocrystal solar cells with oxide charge-transport layers.

PubMed

Hyun, Byung-Ryool; Choi, Joshua J; Seyler, Kyle L; Hanrath, Tobias; Wise, Frank W

2013-12-23

Oxides are commonly employed as electron-transport layers in optoelectronic devices based on semiconductor nanocrystals, but are relatively rare as hole-transport layers. We report studies of NiO hole-transport layers in PbS nanocrystal photovoltaic structures. Transient fluorescence experiments are used to verify the relevant energy levels for hole transfer. On the basis of these results, planar heterojunction devices with ZnO as the photoanode and NiO as the photocathode were fabricated and characterized. Solution-processed devices were used to systematically study the dependence on nanocrystal size and achieve conversion efficiency as high as 2.5%. Optical modeling indicates that optimum performance should be obtained with thinner oxide layers than can be produced reliably by solution casting. Room-temperature sputtering allows deposition of oxide layers as thin as 10 nm, which enables optimization of device performance with respect to the thickness of the charge-transport layers. The best devices achieve an open-circuit voltage of 0.72 V and efficiency of 5.3% while eliminating most organic material from the structure and being compatible with tandem structures.

Stabilization of solar films against hi temperature deactivation

DOEpatents

Jefferson, Clinton F.

1984-03-20

A multi-layer solar energy collector of improved stability comprising: (1) a solar absorptive film consisting essentially of copper oxide, cobalt oxide and manganese oxide; (2) a substrate of quartz, silicate glass or a stainless steel; and (3) an interlayer of platinum, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of platinum to obtain a stable conductor-dielectric tandem.

Transparent Oxide TFTs Fabricated by Atomic Layer Deposition

DTIC Science & Technology

2014-04-17

Transparent Oxide TFTs Fabricated by Atomic Layer Deposition(FA2386-11-1-114052) Yukiharu Uraoka, Nara Institute of Science and Technology Term...2011.5.1-2012.4.30 Purpose and Background: In recent years, the application of zinc oxide (ZnO) thin films as an active channel layer in TFTs has...or other flexible substrates. Higher field-effect mobility of ZnO TFTs than a-Si:H TFTs has been recently demonstrated. However, reliability for

The Nature of Surface Oxides on Corrosion-Resistant Nickel Alloy Covered by Alkaline Water

PubMed Central

2010-01-01

A nickel alloy with high chrome and molybdenum content was found to form a highly resistive and passive oxide layer. The donor density and mobility of ions in the oxide layer has been determined as a function of the electrical potential when alkaline water layers are on the alloy surface in order to account for the relative inertness of the nickel alloy in corrosive environments. PMID:20672134

Growth of oxide exchange bias layers

DOEpatents

Chaiken, Alison; Michel, Richard P.

1998-01-01

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

Growth of oxide exchange bias layers

DOEpatents

Chaiken, A.; Michel, R.P.

1998-07-21

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bias layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200 C, the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 {angstrom}/sec. The resulting NiO film was amorphous. 4 figs.

Oxidation of SUS-316 stainless steel for fast breeder reactor fuel cladding under oxygen pressure controlled by Ni/NiO oxygen buffer

NASA Astrophysics Data System (ADS)

Saito, Minoru; Furuya, Hirotaka; Sugisaki, Masayasu

1985-09-01

Oxidation of SUS-316 stainless steel for a fast breeder reactor fuel cladding was examined in the temperature range of 843-1010 K under the oxygen pressure of 1017 t - 10 t-13 Pa hy use of an experimental technique of a Ni/NiO oxygen buffer. The formation of the duplex oxide layer, i.e. an outer Fe 3O 4 layer and an inner (Fe, Cr, Ni)-spinel layer, was observed and the oxidation kinetics was found to obey the parabolic rate law. The oxygen pressure and temperature dependence of the parabolic rate constant kp( PO2, T) was determined as follows: kp( PO2, T)/ kg2 · m-1 · s-1 = 0.170( PO2/ Pa) 0.141exp[-114 × 10 3/( RT/ J)]. On the basis of the oxidation kinetics and the metallographic information, the outward diffusion of Fe in the outer oxide layer was assigned to be the rate-determining process.

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney Allen; Walker, Frederick Joseph

1998-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Process for growing a film epitaxially upon an oxide surface and structures formed with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1995-01-01

A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide.

PubMed

Timm, Rainer; Head, Ashley R; Yngman, Sofie; Knutsson, Johan V; Hjort, Martin; McKibbin, Sarah R; Troian, Andrea; Persson, Olof; Urpelainen, Samuli; Knudsen, Jan; Schnadt, Joachim; Mikkelsen, Anders

2018-04-12

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

Understanding the Intrinsic Electrochemistry of Ni-Rich Layered Cathodes

NASA Astrophysics Data System (ADS)

Sallis, Shawn

The demand for energy is continually increasing overtime and the key to meeting future demand in a sustainable way is with energy storage. Li-ion batteries employing layered transition metal oxide cathodes are one of the most technologically important energy storage technologies. However, current Li-ion batteries are unable to access their full theoretical capacity and suffer from performance limiting degradation over time partially originating from the cathode and partially from the interface with the electrolyte. Understanding the fundamental limitations of layered transition metal oxide cathodes requires a complete understanding of the surface and bulk of the materials in their most delithiated state. In this thesis, we employ LiNi0.8Co0.15Al 0.05O2 (NCA) as a model system for Ni-rich layered oxide cathodes. Unlike its parent compound, LiCoO2, NCA is capable of high states of delithiation with minimal structural transitions. Furthermore, commercially available NCA has little to no transition metals in the Li layer. X-ray spectroscopies are an ideal tool for studying cathodes at high states of delithiation due their elemental selectivity, range of probing depths, and sensitivity to both chemical and electronic state information. The oxidation state of the transition metals at the surface can be probed via X-ray photoelectron spectroscopy (XPS) while both bulk and surface oxidation states as well as changes in metal oxygen bonding can be probed using X-ray absorption spectroscopy (XAS). Using X-ray spectroscopy in tandem with electrochemical, transport and microscopy measurements of the same materials, the impedance growth with increasing delithiation was correlated with the formation of a disordered NiO phase on the surface of NCA which was precipitated by the release of oxygen. Furthermore, the surface degradation was strongly impacted by the type of Li salt used in the electrolyte, with the standard commercial salt LiPF6 suffering from exothermic decomposition at high voltages and temperatures. Substituting LiPF6with LiBF4 suppressed NCA surface degradation and the dissolution of the transition metals into the electrolyte which is responsible for the impedance growth. Even in the most extreme conditions (4.75V vs Li +/Li0 at 60 °C for > 100 hrs) the degradation (i.e. metal reduction) was restricted to the first 10-30 nm and no evidence of oxygen loss was observed in the bulk. However, the transition metal ions were found to cease oxidizing above 4.25 V vs Li+/Li0 despite it being possible to extract 20% more lithium. Using a newly developed high efficiency resonant inelastic x-ray scattering (RIXS) spectrometer to probe the O K-edge of NCA electrodes at various conditions, it was concluded that oxygen participates in the charge compensation at the highest states of delithiation instead of the transition metals. These results are intrinsic to the physical and electronic structure of NCA and appear general to the other layered transition metal oxides currently under consideration for use as cathodes in Li-ion batteries.

Strong and reversible modulation of carbon nanotube-silicon heterojunction solar cells by an interfacial oxide layer.

PubMed

Jia, Yi; Cao, Anyuan; Kang, Feiyu; Li, Peixu; Gui, Xuchun; Zhang, Luhui; Shi, Enzheng; Wei, Jinquan; Wang, Kunlin; Zhu, Hongwei; Wu, Dehai

2012-06-21

Deposition of nanostructures such as carbon nanotubes on Si wafers to make heterojunction structures is a promising route toward high efficiency solar cells with reduced cost. Here, we show a significant enhancement in the cell characteristics and power conversion efficiency by growing a silicon oxide layer at the interface between the nanotube film and Si substrate. The cell efficiency increases steadily from 0.5% without interfacial oxide to 8.8% with an optimal oxide thickness of about 1 nm. This systematic study reveals that formation of an oxide layer switches charge transport from thermionic emission to a mixture of thermionic emission and tunneling and improves overall diode properties, which are critical factors for tailoring the cell behavior. By controlled formation and removal of interfacial oxide, we demonstrate oscillation of the cell parameters between two extreme states, where the cell efficiency can be reversibly altered by a factor of 500. Our results suggest that the oxide layer plays an important role in Si-based photovoltaics, and it might be utilized to tune the cell performance in various nanostructure-Si heterojunction structures.

Laccase-Functionalized Graphene Oxide Assemblies as Efficient Nanobiocatalysts for Oxidation Reactions

PubMed Central

Patila, Michaela; Kouloumpis, Antonios; Gournis, Dimitrios; Rudolf, Petra; Stamatis, Haralambos

2016-01-01

Multi-layer graphene oxide-enzyme nanoassemblies were prepared through the multi-point covalent immobilization of laccase from Trametes versicolor (TvL) on functionalized graphene oxide (fGO). The catalytic properties of the fGO-TvL nanoassemblies were found to depend on the number of the graphene oxide-enzyme layers present in the nanostructure. The fGO-TvL nanoassemblies exhibit an enhanced thermal stability at 60 °C, as demonstrated by a 4.7-fold higher activity as compared to the free enzyme. The multi-layer graphene oxide-enzyme nanoassemblies can efficiently catalyze the oxidation of anthracene, as well as the decolorization of an industrial dye, pinacyanol chloride. These materials retained almost completely their decolorization activity after five reaction cycles, proving their potential as efficient nano- biocatalysts for various applications. PMID:26927109

Drude conductivity exhibited by chemically synthesized reduced graphene oxide

NASA Astrophysics Data System (ADS)

Younas, Daniyal; Javed, Qurat-ul-Ain; Fatima, Sabeen; Kalsoom, Riffat; Abbas, Hussain; Khan, Yaqoob

2017-09-01

Electrical conductance in graphene layers having Drude like response due to massless Dirac fermions have been well explained theoretically as well as experimentally. In this paper Drude like electrical conductivity response of reduced graphene oxide synthesized by chemical route is presented. A method slightly different from conventional methods is used to synthesize graphene oxide which is then converted to reduced graphene oxide. Various analytic techniques were employed to verify the successful oxidation and reductions in the process and were also used to measure various parameters like thickness of layers and conductivity. Obtained reduced graphene oxide has very thin layers of thickness around 13 nm on average and reduced graphene oxide has average thickness below 20 nm. Conductivity of the reduced graphene was observed to have Drude like response which is explained on basis of Drude model for conductors.

Oxidation characteristics of Ti-25Al-10Nb-3V-1Mo intermetallic alloy

NASA Technical Reports Server (NTRS)

Wallace, Terryl A.; Clark, Ronald K.; Sankaran, Sankara N.; Wiedemann, Karl E.

1990-01-01

Static oxidation kinetics of the super-alpha 2 titanium-aluminide alloy Ti-25Al-10Nb-3V-1Mo (at. percent) were investigated in air over the temperature range of 650 to 1000 C using thermogravimetric analysis. The oxidation kinetics were complex at all exposure temperatures and displayed up to three distinct oxidation rates. Breakaway oxidation occurred after long exposure times at high temperatures. Oxidation products were determined using x ray diffraction techniques, electron microprobe analysis, and energy dispersive x ray analysis. Oxide scale morphology was examined by scanning electron microscopy of the surfaces and cross sections of oxidized specimens. The oxides during the parabolic stages were compact and multilayered, consisting primarily of TiO2 doped with Nb, a top layer of Al2O3, and a thin bottom layer of TiN. The transition between the second and third parabolic stage was found to be linked to the formation of a TiAl layer at the oxide-metal interface. Porosity was formed during the third stage, causing degradation of the oxide and the beginning of breakaway oxidation.

Layered assembly of graphene oxide and Co-Al layered double hydroxide nanosheets as electrode materials for supercapacitors.

PubMed

Wang, Lei; Wang, Dong; Dong, Xin Yi; Zhang, Zhi Jun; Pei, Xian Feng; Chen, Xin Jiang; Chen, Biao; Jin, Jian

2011-03-28

An innovative strategy of fabricating electrode material by layered assembling two kinds of one-atom-thick sheets, carboxylated graphene oxide (GO) and Co-Al layered double hydroxide nanosheet (Co-Al LDH-NS) for the application as a pseudocapacitor is reported. The Co-Al LDH-NS/GO composite exhibits good energy storage properties.

Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography

DOEpatents

Montcalm, Claude; Stearns, Daniel G.; Vernon, Stephen P.

1999-01-01

A passivating overcoat bilayer is used for multilayer reflective coatings for extreme ultraviolet (EUV) or soft x-ray applications to prevent oxidation and corrosion of the multilayer coating, thereby improving the EUV optical performance. The overcoat bilayer comprises a layer of silicon or beryllium underneath at least one top layer of an elemental or a compound material that resists oxidation and corrosion. Materials for the top layer include carbon, palladium, carbides, borides, nitrides, and oxides. The thicknesses of the two layers that make up the overcoat bilayer are optimized to produce the highest reflectance at the wavelength range of operation. Protective overcoat systems comprising three or more layers are also possible.

Titanium modified with layer-by-layer sol-gel tantalum oxide and an organodiphosphonic acid: a coating for hydroxyapatite growth.

PubMed

Arnould, C; Volcke, C; Lamarque, C; Thiry, P A; Delhalle, J; Mekhalif, Z

2009-08-15

Titanium and its alloys are widely used in surgical implants due to their appropriate properties like corrosion resistance, biocompatibility, and load bearing. Unfortunately when metals are used for orthopedic and dental implants there is the possibility of loosening over a long period of time. Surface modification is a good way to counter this problem. A thin tantalum oxide layer obtained by layer-by-layer (LBL) sol-gel deposition on top of a titanium surface is expected to improve biocorrosion resistance in the body fluid, biocompatibility, and radio-opacity. This elaboration step is followed by a modification of the tantalum oxide surface with an organodiphosphonic acid self-assembled monolayer, capable of chemically binding to the oxide surface, and also improving hydroxyapatite growth. The different steps of this proposed process are characterized by surfaces techniques like contact angle, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM).

Fluorine compounds for doping conductive oxide thin films

DOEpatents

Gessert, Tim; Li, Xiaonan; Barnes, Teresa M; Torres, Jr., Robert; Wyse, Carrie L

2013-04-23

Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Analysis of surface scale on the Ni-based superalloy CMSX-10N and proposed mechanism of formation

NASA Astrophysics Data System (ADS)

Simmonds, S.; D'Souza, N.; Ryder, K. S.; Dong, H.

2012-01-01

There is a continuing demand to raise the operating temperature of jet engine turbine blades to meet the need for higher turbine entry temperatures (TET) in order to increase thermal efficiency and thrust. Modern, high-pressure turbine blades are made from Ni-based superalloys in single-crystal form via the investment casting process. One important post-cast surface defect, known as 'surface scale', has been investigated on the alloy CMSX-10N. This is an area of distinct discolouration of the aerofoil seen after casting. Auger electron and X-ray photoelectron spectroscopy analysis were carried out on both scaled and un-scaled areas. In the scaled region, a thin layer (~800nm) of Ni oxide is evident. In the un-scaled regions there is a thicker Al2O3 layer. It is shown that, as the blade cools during casting, differential thermal contraction of mould and alloy causes the solid blade to 'detach' from the mould in these scaled areas. The formation of Ni Oxides is facilitated by this separation.

Anti-reflective coating with a conductive indium tin oxide layer on flexible glass substrates.

PubMed

Sung, Yilin; Malay, Robert E; Wen, Xin; Bezama, Christian N; Soman, Varun V; Huang, Ming-Huang; Garner, Sean M; Poliks, Mark D; Klotzkin, David

2018-03-20

Flexible glass has many applications including photovoltaics, organic light-emitting device (OLED) lighting, and displays. Its ability to be processed in a roll-to-roll facility enables high-throughput continuous manufacturing compared to conventional glass processing. For photovoltaic, OLED lighting, and display applications, transparent conductors are required with minimal optical reflection losses. Here, we demonstrate an anti-reflective coating (ARC) that incorporates a useful transparent conductor that is realizable on flexible substrates. This reduces the average reflectivity to less than 6% over the visible band from normal incidence to incident angles up to 60°. This ARC is designed by the average uniform algorithm method. The coating materials consist of a multilayer stack of an electrically functional conductive indium tin oxide with conductivity 2.95×10 5   Siemens/m (31 Ω/□), and AlSiO 2 . The coatings showed modest changes in reflectivity and no delamination after 10,000 bending cycles. This demonstrates that effective conductive layers can be integrated into ARCs and can be realized on flexible glass substrates with proper design and process control.

Reducing nitrous oxide emissions to mitigate climate change and protect the ozone layer.

PubMed

Li, Li; Xu, Jianhua; Hu, Jianxin; Han, Jiarui

2014-05-06

Reducing nitrous oxide (N2O) emissions offers the combined benefits of mitigating climate change and protecting the ozone layer. This study estimates historical and future N2O emissions and explores the mitigation potential for China's chemical industry. The results show that (1) from 1990 to 2012, industrial N2O emissions in China grew by some 37-fold from 5.07 to 174 Gg (N2O), with total accumulated emissions of 1.26 Tg, and (2) from 2012 to 2020, the projected emissions are expected to continue growing rapidly from 174 to 561 Gg under current policies and assuming no additional mitigation measures. The total accumulated mitigation potential for this forecast period is about 1.54 Tg, the equivalent of reducing all the 2011 greenhouse gases from Australia or halocarbon ozone-depleting substances from China. Adipic acid production, the major industrial emission source, contributes nearly 80% of the industrial N2O emissions, and represents about 96.2% of the industrial mitigation potential. However, the mitigation will not happen without implementing effective policies and regulatory programs.

Geometrical Effects in Noise Spectra of Superconducting Flux Qubits

NASA Astrophysics Data System (ADS)

Petukhov, Andre; Smelyanskiy, Vadim; Martinis, John

We present theoretical study of geometrical effects related to spin diffusion in superconducting flux qubits. We adopt a model of a long superconducting wire surrounded by a thin oxide layer with spins distributed uniformly over cross-sectional area of the oxide layer. Using a continuous transformation from a round cylinder to a flat wire strip, we demonstrate that the noise spectral density tends to a power law S (ω) ~(ω / Γ) - s with s 3 / 4 , approaching s = 3 / 4 for very thin wires. The ω-s dependence is valid in a broad frequency range above ωΓ stretching up to four orders of magnitude in units of characteristic diffusion decay rate Γ ~ 1 -102 Hz. The effect is highly sensitive to a cross-sectional aspect ratio of a thin wire thus revealing its geometrical origin. We substantiate our findings by detailed comparison with available experimental data and conclude that 3 / 4 power law distinguishes spin diffusion flux noise from generic `` 1 / f '' family. Supported by the AFRL Information Directorate under Grant F4HBKC4162G001.

Enhancing long-term photostability of BiVO4 photoanodes for solar water splitting by tuning electrolyte composition

NASA Astrophysics Data System (ADS)

Lee, Dong Ki; Choi, Kyoung-Shin

2018-01-01

As the performance of photoelectrodes used for solar water splitting continues to improve, enhancing the long-term stability of the photoelectrodes becomes an increasingly crucial issue. In this study, we report that tuning the composition of the electrolyte can be used as a strategy to suppress photocorrosion during solar water splitting. Anodic photocorrosion of BiVO4 photoanodes involves the loss of V5+ from the BiVO4 lattice by dissolution. We demonstrate that the use of a V5+-saturated electrolyte, which inhibits the photooxidation-coupled dissolution of BiVO4, can serve as a simple yet effective method to suppress anodic photocorrosion of BiVO4. The V5+ species in the solution can also incorporate into the FeOOH/NiOOH oxygen-evolution catalyst layer present on the BiVO4 surface during water oxidation, further enhancing water-oxidation kinetics. The effect of the V5+ species in the electrolyte on both the long-term photostability of BiVO4 and the performance of the FeOOH/NiOOH oxygen-evolution catalyst layer is systematically elucidated.

Oxidation characteristics of 440 C CRES in gaseous oxygen (GOX) environments. [Corrosion Resistant Steel

NASA Technical Reports Server (NTRS)

Dennies, Daniel P.; Parsons, Terry D.

1986-01-01

The oxidation characteristics of 440 C corrosion-resistant steel are evaluated. The dependence of oxide color, type, and thickness, material hardness, and microstructure on temperature is examined. The effects of exposure time, passivation layer, and oxygen pressure on the oxide formation are investigated. A direct relationship between temperature and oxide color, formation, and thickness is detected. It is observed that the exposure time does not affect the microstructure or oxide color, type, or thickness; however, the passivation layer does affect oxide color and type.

Prediction of Isoelectric Point of Manganese and Cobalt Lamellar Oxides: Application to Controlled Synthesis of Mixed Oxides.

PubMed

Tang, Céline; Giaume, Domitille; Guerlou-Demourgues, Liliane; Lefèvre, Grégory; Barboux, Philippe

2018-05-30

To design novel layered materials, bottom-up strategy is very promising. It consists of (1) synthesizing various layered oxides, (2) exfoliating them, then (3) restacking them in a controlled way. The last step is based on electrostatic interactions between different layered oxides and is difficult to control. The aim of this study is to facilitate this step by predicting the isoelectric point (IEP) of exfoliated materials. The Multisite Complexation model (MUSIC) was used for this objective and was shown to be able to predict IEP from the mean oxidation state of the metal in the (hydr)oxides, as the main parameter. Moreover, the effect of exfoliation on IEP has also been calculated. Starting from platelets with a high basal surface area over total surface area, we show that the exfoliation process has no impact on calculated IEP value, as verified with experiments. Moreover, the restacked materials containing different monometallic (hydr)oxide layers also have an IEP consistent with values calculated with the model. This study proves that MUSIC model is a useful tool to predict IEP of various complex metal oxides and hydroxides.

Overview of chemical vapor infiltration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Besmann, T.M.; Stinton, D.P.; Lowden, R.A.

1993-06-01

Chemical vapor infiltration (CVI) is developing into a commercially important method for the fabrication of continuous filament ceramic composites. Current efforts are focused on the development of an improved understanding of the various processes in CVI and its modeling. New approaches to CVI are being explored, including pressure pulse infiltration and microwave heating. Material development is also proceeding with emphasis on improving the oxidation resistance of the interfacial layer between the fiber and matrix. This paper briefly reviews these subjects, indicating the current state of the science and technology.

Advanced materials and design for low temperature SOFCs

DOEpatents

Wachsman, Eric D.; Yoon, Heesung; Lee, Kang Taek; Camaratta, Matthew; Ahn, Jin Soo

2016-05-17

Embodiments of the invention are directed to SOFC with a multilayer structure comprising a porous ceramic cathode, optionally a cathodic triple phase boundary layer, a bilayer electrolyte comprising a cerium oxide comprising layer and a bismuth oxide comprising layer, an anion functional layer, and a porous ceramic anode with electrical interconnects, wherein the SOFC displays a very high power density at temperatures below 700.degree. C. with hydrogen or hydrocarbon fuels. The low temperature conversion of chemical energy to electrical energy allows the fabrication of the fuel cells using stainless steel or other metal alloys rather than ceramic conductive oxides as the interconnects.

Durable silver coating for mirrors

DOEpatents

Wolfe, Jesse D.; Thomas, Norman L.

2000-01-01

A durable multilayer mirror includes reflective layers of aluminum and silver and has high reflectance over a broad spectral range from ultraviolet to visible to infrared. An adhesion layer of a nickel and/or chromium alloy or nitride is deposited on an aluminum surface, and a thin layer of silver is then deposited on the adhesion layer. The silver layer is protected by a passivation layer of a nickel and/or chromium alloy or nitride and by one or more durability layers made of metal oxides and typically a first layer of metal nitride. The durability layers may include a composite silicon aluminum nitride and an oxinitride transition layer to improve bonding between nitride and oxide layers.

STUDY OF THE OXIDATION OF NON-ALLOYED ZIRCONIUM AND OF OXYGEN DIFFUSION IN THE OXIDE FILM AND IN THE METAL (in French)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Debuigne, J.; Lehr, P.

1963-12-01

The oxidation processes of zirconium at 600-850 deg C were studied. A micrographic and radiocrystallographic analysis of the oxide layers formed at the surface of the metal was carried out. The kinetic results, weight gains as function nf time, were completed by the study of oxygen diffusion through the oxide layer formed and in the underlying metal. (auth)

Burning Graphene Layer-by-Layer

PubMed Central

Ermakov, Victor A.; Alaferdov, Andrei V.; Vaz, Alfredo R.; Perim, Eric; Autreto, Pedro A. S.; Paupitz, Ricardo; Galvao, Douglas S.; Moshkalev, Stanislav A.

2015-01-01

Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in “cold-wall” reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material. PMID:26100466

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Effect of multiple deposition of NiO layer on the performance of inverted type organic solar cell based on ZnO/P3HT:PCBM

NASA Astrophysics Data System (ADS)

Sabri, Nasehah Syamin; Lim, Eng Liang; Yap, Chi Chin; Yahaya, Muhammad; Salleh, Muhamad Mat; Jumali, Mohammad Hafizuddin Haji

2017-05-01

In this work, the effect of multiple deposition of nickel oxide (NiO) hole transport layer (HTL) on the performance of inverted type organic solar cell with a configuration of fluorine tin oxide (FTO)/zinc oxide (ZnO) nanorods/ poly(3-hexylthiopene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/NiO/silver (Ag) was investigated. The NiO nanoparticles solution was spin-coated on top of the photoactive layer (P3HT:PCBM) prior to deposition of Ag electrode. Different numbers of NiO layers (1, 2, and 4) were deposited on the photoactive layer to obtain the optimum surface morphology of HTL. The device with 2 layers of NiO exhibited the optimum power conversion efficiency of 1.10%. It is believed that the optimum NiO deposition layer gives the complete coverage at photoactive layer and forms ohmic contact between the photoactive layer and Ag electrode.

Solvent polarity effect on quality of n-octadecanethiol self-assembled monolayers on copper and oxidized copper

NASA Astrophysics Data System (ADS)

Zhang, Yaozhong; Zhou, Jun; Zhang, Xiaoli; Hu, Jun; Gao, Han

2014-11-01

This article reports the effect of solvent polarity on the formation of n-octadecanethiol self-assembled monolayers (C18SH-SAMs) on pure copper surface and oxidized copper surface. The quality of SAMs prepared in different solvents (n-hexane, toluene, trichloroethylene, chloroform, acetone, acetonitrile, ethanol) was monitored by EIS, RAIRS and XPS. The results indicated that C18SH-SAMs formed in these solvents were in good barrier properties on pure copper surface and the structures of monolayers formed in high polarity solvents were more compact and orderly than that formed in low polarity solvents. For comparison, C18SH adsorbed on the surface of oxidized copper in these solvents were studied and the results indicated that C18SH could be adsorbed on oxidized copper surface after the reduction of copper oxide layer by thiols. Compared with high polarity solvents, a limited reduction process of oxidized copper by thiols led to the incompletely formation of monolayers in low polarity solvents. This can be interpreted that the generated water on solid-liquid interface and a smaller reaction force restrict the continuous reduction reaction in low polarity solvents

Surface modification of polyethylene by radiation-induced grafting for adhesive bonding. V. Comparison with other surface treatments. [Gamma radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamakawa, S.; Yamamoto, F.

1980-01-01

Helium gas plasma treatment of low-density polyethylene (LDPE) yields much lower peel strength than oxidative treatment using chromic acid and oxygen gas plasma. The practical adhesion, the bondability retention, and the bond durability of oxidatively treated LDPE sheets, bonded with epoxy adhesives, have been compared with those of partially hydrolyzed LDPE-methyl acrylate surface grafts. The oxidized surfaces easily lose the bondability by light rubbing with tissue paper, solvent extraction, heat aging, and artificial weathering, whereas the grafted surfaces retain the bondability. The bondability loss is due to removal of the oxidized layer, and the bondability retention is due to retentionmore » of the surface homopolymer layer. Conventional antioxidants stabilize the grafted but not the oxidized surfaces against thermal oxidative degradation. The grafted LDPE joints have much higher bond durability in humid environments than those of the oxidized LDPE joints. The dry and wet peel strengths of oxidized LDPE joints are greatly improved by application of primers consisting of a base epoxy resin and organic solvents. An adhesion mechanism involving penetration of epoxy adhesives into the oxidized layers and subsequent reinforcement of the layers by curing of the penetrated epoxy is proposed. 5 figures, 5 tables.« less

A study of deformation and strain induced in bulk by the oxide layers formation on a Fe-Cr-Al alloy in high-temperature liquid Pb-Bi eutectic

DOE PAGES

Popovic, M. P.; Chen, K.; Shen, H.; ...

2018-03-29

At elevated temperatures, heavy liquid metals and their alloys are known to create a highly corrosive environment that causes irreversible degradation of most iron-based materials. In this paper, it has been found that an appropriate concentration of oxygen in the liquid alloy can significantly reduce this issue by creating a passivating oxide scale that controls diffusion, especially if Al is present in Fe-based materials (by Al-oxide formation). However, the increase of the temperature and of oxygen content in liquid phase leads to the increase of oxygen diffusion into bulk, and to promotion of the internal Al oxidation. This can causemore » a strain in bulk near the oxide layer, due either to mismatch between the thermal expansion coefficients of the oxides and bulk material, or to misfit of the crystal lattices (bulk vs. oxides). This work investigates the strain induced into proximal bulk of a Fe-Cr-Al alloy by oxide layers formation in liquid lead-bismuth eutectic utilizing synchrotron X-ray Laue microdiffraction. Finally, it is found that internal oxidation is the most likely cause for the strain in the metal rather than thermal expansion mismatch as a two-layer problem.« less

A study of deformation and strain induced in bulk by the oxide layers formation on a Fe-Cr-Al alloy in high-temperature liquid Pb-Bi eutectic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovic, M. P.; Chen, K.; Shen, H.

At elevated temperatures, heavy liquid metals and their alloys are known to create a highly corrosive environment that causes irreversible degradation of most iron-based materials. In this paper, it has been found that an appropriate concentration of oxygen in the liquid alloy can significantly reduce this issue by creating a passivating oxide scale that controls diffusion, especially if Al is present in Fe-based materials (by Al-oxide formation). However, the increase of the temperature and of oxygen content in liquid phase leads to the increase of oxygen diffusion into bulk, and to promotion of the internal Al oxidation. This can causemore » a strain in bulk near the oxide layer, due either to mismatch between the thermal expansion coefficients of the oxides and bulk material, or to misfit of the crystal lattices (bulk vs. oxides). This work investigates the strain induced into proximal bulk of a Fe-Cr-Al alloy by oxide layers formation in liquid lead-bismuth eutectic utilizing synchrotron X-ray Laue microdiffraction. Finally, it is found that internal oxidation is the most likely cause for the strain in the metal rather than thermal expansion mismatch as a two-layer problem.« less

Superconducting composite with multilayer patterns and multiple buffer layers

DOEpatents

Wu, X.D.; Muenchausen, R.E.

1993-10-12

An article of manufacture is described including a substrate, a patterned interlayer of a material selected from the group consisting of magnesium oxide, barium-titanium oxide or barium-zirconium oxide, the patterned interlayer material overcoated with a secondary interlayer material of yttria-stabilized zirconia or magnesium-aluminum oxide, upon the surface of the substrate whereby an intermediate article with an exposed surface of both the overcoated patterned interlayer and the substrate is formed, a coating of a buffer layer selected from the group consisting of cerium oxide, yttrium oxide, curium oxide, dysprosium oxide, erbium oxide, europium oxide, iron oxide, gadolinium oxide, holmium oxide, indium oxide, lanthanum oxide, manganese oxide, lutetium oxide, neodymium oxide, praseodymium oxide, plutonium oxide, samarium oxide, terbium oxide, thallium oxide, thulium oxide, yttrium oxide and ytterbium oxide over the entire exposed surface of the intermediate article, and, a ceramic superconductor. 5 figures.

Passivation of uranium towards air corrosion by N 2+ and C + ion implantation

NASA Astrophysics Data System (ADS)

Arkush, R.; Mintz, M. H.; Shamir, N.

2000-10-01

The passivation of uranium surfaces against air corrosion, by ion implantation processes was studied, using surface analysis methods. Implanting 45 keV N +2 and C + ions produces thin modified surface layers with gradual gradients of the corresponding compounds (i.e., nitrides and carbides, respectively), which avoid the formation of discontinuous interfaces typical to coatings. Such gradual interfaces impart excellent mechanical stability and adhesion to the modified layers, in spite of the large misfit between the metal substrate and the implantation on induced compounds. It turns out that these layers provide an almost absolute protection against air corrosion. A rapid initial stage of oxidation of the modified surface layers takes place, forming very thin protective oxidation zones (1-4 nm thick), which practically stop further air oxidation for years. The mechanism of the initial oxidation stage of the modified layers seems to vary with the type of surface (i.e., either nitrides or carbides). However, in any case the protection ability of the formed oxidation products is excellent, probably due to the close match between these compounds and the underlying nitrides or carbides.

A versatile single molecular precursor for the synthesis of layered oxide cathode materials for Li-ion batteries.

PubMed

Li, Maofan; Liu, Jiajie; Liu, Tongchao; Zhang, Mingjian; Pan, Feng

2018-02-01

A carbonyl-bridged single molecular precursor LiTM(acac) 3 [transition metal (TM) = cobalt/manganese/nickel (Co/Mn/Ni), acac = acetylacetone], featuring a one-dimensional chain structure, was designed and applied to achieve the layered oxide cathode materials: LiTMO 2 (TM = Ni/Mn/Co, NMC). As examples, layered oxides, primary LiCoO 2 , binary LiNi 0.8 Co 0.2 O 2 and ternary LiNi 0.5 Mn 0.3 Co 0.2 O 2 were successfully prepared to be used as cathode materials. When they are applied to lithium-ion batteries (LIBs), all exhibit good electrochemical performance because of their unique morphology and great uniformity of element distribution. This versatile precursor is predicted to accommodate many other metal cations, such as aluminum (Al 3+ ), iron (Fe 2+ ), and sodium (Na + ), because of the flexibility of organic ligand, which not only facilitates the doping-modification of the NMC system, but also enables synthesis of Na-ion layered oxides. This opens a new direction of research for the synthesis of high-performance layered oxide cathode materials for LIBs.

Numerical investigation of metal-semiconductor-insulator-semiconductor passivated hole contacts based on atomic layer deposited AlO x

NASA Astrophysics Data System (ADS)

Ke, Cangming; Xin, Zheng; Ling, Zhi Peng; Aberle, Armin G.; Stangl, Rolf

2017-08-01

Excellent c-Si tunnel layer surface passivation has been obtained recently in our lab, using atomic layer deposited aluminium oxide (ALD AlO x ) in the tunnel layer regime of 0.9 to 1.5 nm, investigated to be applied for contact passivation. Using the correspondingly measured interface properties, this paper compares the theoretical collection efficiency of a conventional metal-semiconductor (MS) contact on diffused p+ Si to a metal-semiconductor-insulator-semiconductor (MSIS) contact on diffused p+ Si or on undoped n-type c-Si. The influences of (1) the tunnel layer passivation quality at the tunnel oxide interface (Q f and D it), (2) the tunnel layer thickness and the electron and hole tunnelling mass, (3) the tunnel oxide material, and (4) the semiconductor capping layer material properties are investigated numerically by evaluation of solar cell efficiency, open-circuit voltage, and fill factor.

Correction: One-step coelectrodeposition-assisted layer-by-layer assembly of gold nanoparticles and reduced graphene oxide and its self-healing three-dimensional nanohybrid for an ultrasensitive DNA sensor.

PubMed

Jayakumar, Kumarasamy; Camarada, María Belén; Dharuman, Venkataraman; Ju, Huangxian; Dey, Ramendra Sundar; Wen, Yangping

2018-02-01

Correction for 'One-step coelectrodeposition-assisted layer-by-layer assembly of gold nanoparticles and reduced graphene oxide and its self-healing three-dimensional nanohybrid for an ultrasensitive DNA sensor' by Jayakumar Kumarasamy, et al., Nanoscale, 2018, DOI: 10.1039/c7nr06952a.

Fabrication of oxide layer on zirconium by micro-arc oxidation: Structural and antimicrobial characteristics.

PubMed

Fidan, S; Muhaffel, F; Riool, M; Cempura, G; de Boer, L; Zaat, S A J; Filemonowicz, A Czyrska-; Cimenoglu, H

2017-02-01

The aim of this study was to cover the surfaces of zirconium (Zr) with an antimicrobial layer for biomedical applications. For this purpose, the micro-arc oxidation (MAO) process was employed in a sodium silicate and sodium hydroxide containing base electrolyte with and without addition of silver acetate (AgC 2 H 3 O 2 ). In general, synthesized MAO layers were composed of zirconium oxide (ZrO 2 ) and zircon (ZrSiO 4 ). Addition of AgC 2 H 3 O 2 into the base electrolyte caused homogenous precipitation of silver-containing particles in the MAO layer, which exhibited excellent antibacterial efficiency against methicillin-resistant Staphylococcus aureus (MRSA) as compared to the untreated and MAO-treated Zr. Copyright © 2016 Elsevier B.V. All rights reserved.

Highly scaled equivalent oxide thickness of 0.66 nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

NASA Astrophysics Data System (ADS)

Tsai, Ming-Li; Wang, Shin-Yuan; Chien, Chao-Hsin

2017-08-01

Through in situ hydrogen plasma treatment (HPT) and plasma-enhanced atomic-layer-deposited TiN (PEALD-TiN) layer capping, we successfully fabricated TiN/HfO2/GaSb metal-oxide-semiconductor capacitors with an ultrathin equivalent oxide thickness of 0.66 nm and a low density of states of approximately 2 × 1012 cm-2 eV-1 near the valence band edge. After in situ HPT, a native oxide-free surface was obtained through efficient etching. Moreover, the use of the in situ PEALD-TiN layer precluded high-κ dielectric damage that would have been caused by conventional sputtering, thereby yielding a superior high-κ dielectric and low gate leakage current.

High temperature cooling system and method

DOEpatents

Loewen, Eric P.

2006-12-12

A method for cooling a heat source, a method for preventing chemical interaction between a vessel and a cooling composition therein, and a cooling system. The method for cooling employs a containment vessel with an oxidizable interior wall. The interior wall is oxidized to form an oxide barrier layer thereon, the cooling composition is monitored for excess oxidizing agent, and a reducing agent is provided to eliminate excess oxidation. The method for preventing chemical interaction between a vessel and a cooling composition involves introducing a sufficient quantity of a reactant which is reactive with the vessel in order to produce a barrier layer therein that is non-reactive with the cooling composition. The cooling system includes a containment vessel with oxidizing agent and reducing agent delivery conveyances and a monitor of oxidation and reduction states so that proper maintenance of a vessel wall oxidation layer occurs.

Surface functionalization of magnetic nanoparticles formed by self-associating hydrophobized oxidized dextrans

NASA Astrophysics Data System (ADS)

Farber, Shimon; Ickowicz, Diana E.; Melnik, Kristie; Yudovin-Farber, Ira; Recko, Daniel; Rampersaud, Arfaan; Domb, Abraham J.

2014-06-01

Magnetic iron oxide nanoparticles surface covered with oleic acid layer followed by a second layer of hydrophobized oxidized dextran aldehyde were prepared and tested for physico-chemical properties and ligand- and cell-specific binding. It was demonstrated that oleic acid-iron oxide nanoparticles coated with an additional layer of hydrophobized oxidized dextran were dispersible in buffer solutions and possess surface aldehyde active groups available for further binding of ligands or markers via imine or amine bond formation. Hydrophobized dextrans were synthesized by periodate oxidation and conjugation of various alkanamines to oxidized dextran by imination. Physico-chemical properties, as separation using magnetic field, magnetite concentration, and particle diameter, of the prepared magnetic samples are reported. The biotin-binding protein, neutravidin, was coupled to the particle surface by a simple reductive amination procedure. The particles were used for specific cell separation with high specificity.

Emissivity model of steel 430 during the growth of oxide layer at 800-1100 K and 1.5 μm

NASA Astrophysics Data System (ADS)

Xing, Wei; Shi, Deheng; Sun, Jinfeng; Zhu, Zunlue

2018-01-01

This work studied the variation in spectral emissivity with growth of oxide layer at the different temperatures. For this reason, we measured the normal spectral emissivity during the growth of oxide layer on the sample surface at a wavelength of 1.5 μm over a temperature range 800-1100 K. In the experiment, the temperature was measured by the two thermocouples, which were symmetrically welded onto the front surface of specimens. The average of their readings was regarded as the true temperature. The detector should be perpendicular to the specimen surface as accurately as possible. The variation in spectral emissivity with growth of oxide layer was evaluated at a certain temperature. Altogether 11 emissivity models were evaluated. The conclusion was gained that the more the number of parameters used in the models was, the better the fitting accuracy became. On the whole, all the PEE models, the four-parameter LEE model and the five-parameter PFE, PLE and LEE models could be employed to well fit this kind of variation. The variation in spectral emissivity with temperature was determined at a certain thickness of oxide film. Almost all the models studied in this paper could be used to accurately evaluate this variation. The approximate models of spectral emissivity as a function of temperature and oxide-layer thickness were proposed. The strong oscillations of spectral emissivity were observed, which were affirmed to arise from the interference effect between the two radiations stemming from the oxide layer and from the substrate. The uncertainties in the temperature of steel 430 generated only by the surface oxidization were approximately 4.1-10.7 K in this experiment.

Formation of ZrO{sub 2} in coating on Mg–3 wt.%Al–1 wt.%Zn alloy via plasma electrolytic oxidation: Phase and structure of zirconia

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kang Min; Kim, Yeon Sung; Yang, Hae Woong

2015-01-15

An investigation of the coating structure formed on Mg–3 wt.%Al–1 wt.%Zn alloy sample subjected to plasma electrolytic oxidation was examined by field-emission transmission electron microscopy. The plasma electrolytic oxidation process was conducted in a phosphoric acid electrolyte containing K{sub 2}ZrF{sub 6} for 600 s. Microstructural observations showed that the coating consisting of MgO, MgF{sub 2}, and ZrO{sub 2} phases was divided into three distinctive parts, the barrier, intermediate, and outer layers. Nanocrystalline MgO and MgF{sub 2} compounds were observed mainly in the barrier layer of ~ 1 μm thick near to the substrate. From the intermediate to outer layers, variousmore » ZrO{sub 2} polymorphs appeared due to the effects of the plasma arcing temperature on the phase transition of ZrO{sub 2} compounds during the plasma electrolytic oxidation process. In the outer layer, MgO compound grew in the form of a dendrite-like structure surrounded by cubic ZrO{sub 2}. - Highlights: • The barrier layer containing MgO and MgF{sub 2} was observed near to the Mg substrate. • In the intermediate layer, m-, t-, and o-ZrO{sub 2} compounds were additionally detected. • The outer layer contained MgO with the dendrite-like structure surrounded by c-ZrO{sub 2}. • The grain sizes of compounds in oxide layer increased from barrier to outer layer.« less

Nitrous Oxide: A Greenhouse Gas That is Also an Ozone Layer Depleting Gas

NASA Astrophysics Data System (ADS)

Reed, S.; Uriarte, M.; Wood, T. E.; Cavaleri, M. A.; Lugo, A. E.

2014-12-01

Nitrous oxide, N2O, is the major source of nitrogen oxides in the stratosphere, where these oxides playa critical roles in ozone layer depletion by itself and moderating ozone layer depletion by chlorinated chemicals. Thus N2O plays a complex role in the stratosphere. Nitrous oxide is also a greenhouse gas and it contributes to the radiative forcing of climate. Indeed, it is considered the third most important greenhouse gas next to carbon dioxide and methane. This dual role of nitrous oxide makes it an interesting gas for the atmosphere- it bridges the issue of ozone layer depletion and climate change. Nitrous oxide has both natural and anthropogenic sources. Therefore, one needs to consider this important distinction between natural and anthropogenic sources as well as its role in two related but separate environmental issues. Further, the sources of nitrous oxide are varied and diffuse, which makes it difficult to quantify different sources. However, it is clear that a majority of anthropogenic nitrous oxide comes from food production (including agricultural and animal growth practices), an activity that is at the heart of human existence. Thus, limiting N2O emissions is not a simple task! I will briefly summarize our understanding of these roles of nitrous oxide in the earth's atmosphere and touch on the possible ways to limit N2O emissions.

Nitrous Oxide: A Greenhouse Gas That is Also an Ozone Layer Depleting Gas

NASA Astrophysics Data System (ADS)

Ravishankara, A. R.

2015-12-01

Nitrous oxide, N2O, is the major source of nitrogen oxides in the stratosphere, where these oxides playa critical roles in ozone layer depletion by itself and moderating ozone layer depletion by chlorinated chemicals. Thus N2O plays a complex role in the stratosphere. Nitrous oxide is also a greenhouse gas and it contributes to the radiative forcing of climate. Indeed, it is considered the third most important greenhouse gas next to carbon dioxide and methane. This dual role of nitrous oxide makes it an interesting gas for the atmosphere- it bridges the issue of ozone layer depletion and climate change. Nitrous oxide has both natural and anthropogenic sources. Therefore, one needs to consider this important distinction between natural and anthropogenic sources as well as its role in two related but separate environmental issues. Further, the sources of nitrous oxide are varied and diffuse, which makes it difficult to quantify different sources. However, it is clear that a majority of anthropogenic nitrous oxide comes from food production (including agricultural and animal growth practices), an activity that is at the heart of human existence. Thus, limiting N2O emissions is not a simple task! I will briefly summarize our understanding of these roles of nitrous oxide in the earth's atmosphere and touch on the possible ways to limit N2O emissions.

Effect of atmospheric-pressure plasma treatment on the adhesion properties of a thin adhesive layer in a selective transfer process

NASA Astrophysics Data System (ADS)

Yoon, Min-Ah; Kim, Chan; Hur, Min; Kang, Woo Seok; Kim, Jaegu; Kim, Jae-Hyun; Lee, Hak-Joo; Kim, Kwang-Seop

2018-01-01

The adhesion between a stamp and thin film devices is crucial for their transfer on a flexible substrate. In this paper, a thin adhesive silicone layer on the stamp was treated by atmospheric pressure plasma to locally control the adhesion strength for the selective transfer. The adhesion strength of the silicone layer was significantly reduced after the plasma treatment, while its surface energy was increased. To understand the inconsistency between the adhesion strength and surface energy changes, the surface properties of the silicone layer were characterized using nanoindentation and X-ray photoelectron spectroscopy. These techniques revealed that a thin, hard, silica-like layer had formed on the surface from plasma-enhanced oxidation. This layer played an important role in decreasing the contact area and increasing the interfacial slippage, resulting in decreased adhesion. As a practical application, the transfer process was demonstrated on GaN LEDs that had been previously delaminated by a laser lift-off (LLO) process. Although the LEDs were not transferred onto the treated adhesive layer due to the reduced adhesion, the untreated adhesive layer could readily pick up the LEDs. It is expected that this simple method of controlling the adhesion of a stamp with a thin adhesive layer would enable a continuous, selective and large-scale roll-to-roll selective transfer process and thereby advance the development of flexible, stretchable and wearable electronics.

Electrochemical growth of CoNi and Pt-CoNi soft magnetic composites on an alkanethiol monolayer-modified ITO substrate.

PubMed

Escalera-López, D; Gómez, E; Vallés, E

2015-07-07

CoNi and Pt-CoNi magnetic layers on indium-tin oxide (ITO) substrates modified by an alkanethiol self-assembled monolayer (SAM) have been electrochemically obtained as an initial stage to prepare semiconducting layer-SAM-magnetic layer hybrid structures. The best conditions to obtain the maximum compactness of adsorbed layers of dodecanethiol (C12-SH) on ITO substrate have been studied using contact angle, AFM, XPS and electrochemical tests. The electrochemical characterization (electrochemical probe or voltammetric response in blank solutions) is fundamental to ensure the maximum blocking of the substrate. Although the electrodeposition process on the SAM-modified ITO substrate is very slow if the blocking of the surface is significant, non-cracked metallic layers of CoNi, with or without a previously electrodeposited seed-layer of platinum, have been obtained by optimizing the deposition potentials. Initial nucleation is expected to take place at the pinhole defects of the C12-SH SAM, followed by a mushroom-like growth regime through the SAM interface that allows the formation of a continuous metallic layer electrically connected to the ITO surface. Due to the potential of the methodology, the preparation of patterned metallic deposits on ITO substrate using SAMs with different coverage as templates is feasible.

Bond layer for a solid oxide fuel cell, and related processes and devices

DOEpatents

Wu, Jian; Striker, Todd-Michael; Renou, Stephane; Gaunt, Simon William

2017-03-21

An electrically-conductive layer of material having a composition comprising lanthanum and strontium is described. The material is characterized by a microstructure having bimodal porosity. Another concept in this disclosure relates to a solid oxide fuel cell attached to at least one cathode interconnect by a cathode bond layer. The bond layer includes a microstructure having bimodal porosity. A fuel cell stack which incorporates at least one of the cathode bond layers is also described herein, along with related processes for forming the cathode bond layer.

Reduction of channel resistance in amorphous oxide thin-film transistors with buried layer

NASA Astrophysics Data System (ADS)

Chong, Eugene; Kim, Bosul; Lee, Sang Yeol

2012-04-01

A silicon-indium-zinc-oxide (SIZO) thin film transistor (TFT) with low channel-resistance (RCH) indium-zinc-oxide (In2O3:ZnO = 9:1) buried layer annealed at low temperature of 200°C exhibited high field-effect mobility (μFE) over 55.8 cm2/V·s which is 5 times higher than that of the conventional TFTs due to small threshold voltage (Vth) change of 1.8 V under bias-temperature stress (BTS) condition for 420 minutes. The low-RCH buried-layer allows more strong current-path formed in channel layer well within relatively high-RCH channel-layer since it is less affected by the channel bulk and/or back interface trap with high carrier concentration.

Electrical Characteristics of Organic Field Effect Transistor Formed by Gas Treatment of High-k Al2O3 at Low Temperature

NASA Astrophysics Data System (ADS)

Lee, Sunwoo; Yoon, Seungki; Park, In-Sung; Ahn, Jinho

2009-04-01

We studied the electrical characteristics of an organic field effect transistor (OFET) formed by the hydrogen (H2) and nitrogen (N2) mixed gas treatment of a gate dielectric layer. We also investigated how device mobility is related to the length and width variations of the channel. Aluminum oxide (Al2O3) was used as the gate dielectric layer. After the treatment, the mobility and subthreshold swing were observed to be significantly improved by the decreased hole carrier localization at the interfacial layer between the gate oxide and pentacene channel layers. H2 gas plays an important role in removing the defects of the gate oxide layer at temperatures below 100 °C.

High Performance and Highly Reliable ZnO Thin Film Transistor Fabricated by Atomic Layer Deposition for Next Generation Displays

DTIC Science & Technology

2011-08-19

zinc oxide ( ZnO ) thin film as an active channel layer in TFT has become of great interest owing to their specific...630-0192 Japan Phone: +81-743-72-6060 Fax: +81-743-72-6069 E-mail: uraoka@ms.naist.jp Keywords: zinc oxide , thin film transistors , atomic layer...deposition Symposium topic: Transparent Semiconductors Oxides [Abstract] In this study, we fabricated TFTs using ZnO thin film as the

Method of coating an iron-based article

DOE Office of Scientific and Technical Information (OSTI.GOV)

Magdefrau, Neal; Beals, James T.; Sun, Ellen Y.

A method of coating an iron-based article includes a first heating step of heating a substrate that includes an iron-based material in the presence of an aluminum source material and halide diffusion activator. The heating is conducted in a substantially non-oxidizing environment, to cause the formation of an aluminum-rich layer in the iron-based material. In a second heating step, the substrate that has the aluminum-rich layer is heated in an oxidizing environment to oxidize the aluminum in the aluminum-rich layer.

An unusual temperature dependence in the oxidation of oxycarbide layers on uranium

NASA Astrophysics Data System (ADS)

Ellis, Walton P.

1981-09-01

An anomalous temperature dependence has been observed for the oxidation kinetics of outermost oxycarbide layers on polycrystalline uranium metal. Normally, oxidation or corrosion reactions are expected to proceed more rapidly as the temperature is elevated. Thus, it came as a surprise when we observed that the removal of the outermost atomic layers of carbon from uranium oxycarbide by O 2 reproducibly proceeds at a much faster rate at 25°C than at 280°C.

An unusual temperature dependence in the oxidation of oxycarbide layers on uranium

NASA Astrophysics Data System (ADS)

Ellis, Walton P.

An anomalous temperature dependence has been observed for the oxidation kinetics of outermost oxycarbide layers on polycrystalline uranium metal. Normally, oxidation or corrosion reactions are expected to proceed more rapidly as the temperature is elevated. Thus, it came as a surprise when we observed that the removal of the outermost atomic layers of carbon from uranium oxycarbide by O 2 reproducibly proceeds at a much faster rate at 25°C than at 280°C.

Effect of layer-by-layer coatings and localization of antioxidant on oxidative stability of a model encapsulated bioactive compound in oil-in-water emulsions.

PubMed

Pan, Yuanjie; Nitin, N

2015-11-01

Oxidation of encapsulated bioactives in emulsions is one of the key challenges that limit shelf-life of many emulsion containing products. This study seeks to quantify the role of layer-by-layer coatings and localization of antioxidant molecules at the emulsion interface in influencing oxidation of the encapsulated bioactives. Oxidative barrier properties of the emulsions were simulated by measuring the rate of reaction of peroxyl radicals generated in the aqueous phase with the encapsulated radical sensitive dye in the lipid core of the emulsions. The results of peroxyl radical permeation were compared to the stability of encapsulated retinol (model bioactive) in emulsions. To evaluate the role of layer-by-layer coatings in influencing oxidative barrier properties, radical permeation rates and retinol stability were evaluated in emulsion formulations of SDS emulsion and SDS emulsion with one or two layers of polymers (ϵ-polylysine and dextran sulfate) coated at the interface. To localize antioxidant molecules to the interface, gallic acid (GA) was chemically conjugated with ϵ-polylysine and subsequently deposited on SDS emulsion based on electrostatic interactions. Emulsion formulations with localized GA molecules at the interface were compared with SDS emulsion with GA molecules in the bulk aqueous phase. The results of this study demonstrate the advantage of localization of antioxidant at the interface and the limited impact of short chain polymer coatings at the interface of emulsions in reducing permeation of radicals and oxidation of a model encapsulated bioactive in oil-in-water emulsions. Copyright © 2015 Elsevier B.V. All rights reserved.

Three-dimensional atom probe tomography of oxide, anion, and alkanethiolate coatings on gold.

PubMed

Zhang, Yi; Hillier, Andrew C

2010-07-15

We have used three-dimensional atom probe tomography to analyze several nanometer-thick and monomolecular films on gold surfaces. High-purity gold wire was etched by electropolishing to create a sharp tip suitable for field evaporation with a radius of curvature of <100 nm. The near-surface region of a freshly etched gold tip was examined with the atom probe at subnanometer spatial resolution and with atom-level composition accuracy. A thin contaminant layer, primarily consisting of water and atmospheric gases, was observed on a fresh tip. This sample exhibited crystalline lattice spacings consistent with the interlayer spacing of {200} lattice planes of bulk gold. A thin oxide layer was created on the gold surface via plasma oxidation, and the thickness and composition of this layer was measured. Clear evidence of a nanometer-thick oxide layer was seen coating the gold tip, and the atomic composition of the oxide layer was consistent with the expected stoichiometry for gold oxide. Monomolecular anions layers of Br(-) and I(-) were created via adsorption from aqueous solutions onto the gold. Atom probe data verified the presence of the monomolecular anion layers on the gold surface, with ion density values consistent with literature values. A hexanethiolate monolayer was coated onto the gold tip, and atom probe analysis revealed a thin film whose ion fragments were consistent with the molecular composition of the monolayer and a surface coverage similar to that expected from literature. Details of the various coating compositions and structures are presented, along with discussion of the reconstruction issues associated with properly analyzing these thin-film systems.

Structural and optical studies of porous silicon buried waveguides: Effects of oxidation and pore filling using DR1 dyes

NASA Astrophysics Data System (ADS)

Charrier, J.; Kloul, M.; Pirasteh, P.; Bardeau, J.-F.; Guendouz, M.; Bulou, A.; Haji, L.

2007-11-01

This paper deals with the structural and optical properties of buried waveguides manufactured from mesoporous silicon films (as-formed porous silicon layers, after oxidation, after filling with active DR1 dyes). It is shown that the oxidation process only induced a weak morphology transformation. The 2D profiles of cross-sections of the waveguides by micro-Raman mapping were done in order to check the oxidation rate and to probe the DR1 filling of the layers. This latter appeared homogeneous but surprisingly is greater in the weaker porosity layer. The light propagation through these different waveguides was observed and losses were measured and analyzed. The losses decreased after oxidation but they increased after filling.

The effect of surface oxide layer on the rate of hydrogen emission from aluminum and its alloys in a high vacuum

NASA Technical Reports Server (NTRS)

Makarova, V. I.; Zyabrev, A. A.

1979-01-01

The influence of surface oxide layers on the kinetics of hydrogen emission at the high vacuum of 10 to the minus 8th power torr was investigated at temperatures from 20 to 450 C using samples of pure AB00 aluminum and the cast alloy AMg. Cast and deformed samples of AMts alloy were used to study the effect of oxide film thickness on the rate of hydrogen emission. Thermodynamic calculations of the reactions of the generation and dissociation of aluminum oxide show that degasification at elevated temperatures (up to 600 C) and high vacuum will not reduce the thickness of artificially-generated surface oxide layers on aluminum and its alloys.

Manganese oxide nanowires, films, and membranes and methods of making

DOEpatents

Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

2008-10-21

Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

Expression of nitric oxide synthase in the developing eye of Zebrafish Danio rerio

NASA Astrophysics Data System (ADS)

Wang, Yongjun; Zhang, Shicui; Sawant, M. S.

2004-12-01

Expression of nitric oxide synthase (NOS) in the developing eye of zebrafish was studied by NADPH-diaphorase staining technique. NOS activity was first observed in the optic primordium and the lens placode at 5-somite stage, and remained basically unchanged up to the prim-5 stage. Upon hatching, NOS activity was nearly equally detected in the gangalion cell layer and the photoreceptor layer in the developing retina. However, it began declining in the inner plexiform layer and the inner nuclear layer at this stage. NOS activity disappeared in the lens although the anterior lens epithelium was strongly stained. Two days after hatching, NOS activity was still strong in the photoreceptor layer, but decreased markedly in the gangalion cell layer, the inner plexiform layer and the inner nuclear layer with the retinal patterning. These suggested that nitric oxide (NO), the product of NOS, is not only involved in the modulation of patterning and differentiation of the retinal cells but also in the regulation of proliferation, and differentiation of the lens fibrocytes.

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarpi, B.; Daineche, R.; Girardeaux, C.

Using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, and low energy electron diffraction, we have studied the growth of Mg deposited on Si(100)-(2 × 1). Coverage from 0.05 monolayer (ML) to 3 ML was investigated at room temperature. The growth mode of the magnesium is a two steps process. At very low coverage, there is formation of an amorphous ultrathin silicide layer with a band gap of 0.74 eV, followed by a layer-by-layer growth of Mg on top of this silicide layer. Topographic images reveal that each metallic Mg layer is formed by 2D islands coalescence process on top of the silicidemore » interfacial layer. During oxidation of the Mg monolayer, the interfacial silicide layer acts as diffusion barrier for the oxygen atoms with a decomposition of the silicide film to a magnesium oxide as function of O{sub 2} exposure.« less

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

NASA Technical Reports Server (NTRS)

Moulot, Jacques; Faur, Mircea; Faur, Maria; Goradia, Chandra; Goradia, Manju; Bailey, Sheila

1995-01-01

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

NASA Technical Reports Server (NTRS)

Moulot, Jacques; Faur, M.; Faur, M.; Goradia, C.; Goradia, M.; Bailey, S.

1995-01-01

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Cu-rGO subsurface layer creation on copper substrate and its resistance to oxidation

NASA Astrophysics Data System (ADS)

Pietrzak, Katarzyna; Strojny-Nędza, Agata; Olesińska, Wiesława; Bańkowska, Anna; Gładki, Andrzej

2017-11-01

On the basis of a specially designed experiment, this paper presents a model, which is an attempt to explain the mechanism of formatting and creating oxidation resistance of Cu-rGO subsurface layers. Practically zero chemical affinity of copper to carbon is a fundamental difficulty in creating composite structures of Cu-C, properties which are theoretically possible to estimate. In order to bind the thermally reduced graphene oxide with copper surface, the effect of structural rebuilding of the copper oxide, in the process of annealing in a nitrogen atmosphere, have been used. On intentionally oxidized and anoxic copper substrates the dispersed graphene oxide (GO) and thermally reduced graphene oxide (rGO) were loaded. Annealing processes after the binding effects of both graphene oxide forms to Cu substrates were tested. The methods for high-resolution electron microscopy were found subsurface rGO-Cu layer having a substantially greater resistance to oxidation than pure copper. The mechanism for the effective resistance to oxidation of the Cu-rGO has been presented in a hypothetical form.

Effect of N2 annealing on AlZrO oxide

NASA Astrophysics Data System (ADS)

Pétry, J.; Richard, O.; Vandervorst, W.; Conard, T.; Chen, J.; Cosnier, V.

2003-07-01

In the path to the introduction of high-k dielectric into integrated circuit components, a large number of challenges has to be solved. Subsequent to the film deposition, the high-k film is exposed to additional high-temperature anneals for polycrystalline Si activation but also to improve its own electrical properties. Hence, concerns can be raised regarding the thermal stability of these stacks upon annealing. In this study, we investigated the effect of N2 annealing (700 to 900 °C) of atomic layer chemical vapor deposition AlZrO layers using x-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOFSIMS), transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. The effect of the Si surface preparation [H-Si, 0.5 nm rapid thermal oxide (RTO), Al2O3] on the modification of the high-k oxide and the interfacial layer upon annealing was also analyzed. Compositional changes can be observed for all temperature and surface preparations. In particular, we observe a segregation of Al(oxide) toward the surface of the mixed oxide. In addition, an increase of the Si concentration in the high-k film itself can be seen with a diffusion profile extending toward the surface of the film. On the other hand, the modification of the interfacial layer is strongly dependent on the system considered. In the case of mixed oxide grown on 0.5 nm RTO, no differences are observed between the as-deposited layer and the layer annealed at 700 °C. At 800 °C, a radical change occurs: The initial RTO layer seems to be converted into a mixed layer composed of the initial SiO2 and Al2O3 coming from the mixed oxide, however without forming an Al-silicate layer. A similar situation is found for anneals at 900 °C, as well. When grown on 1.5 nm Al2O3 on 0.5 nm RTO, the only difference with the previous system is the observation of an Al-silicate fraction in the interfacial layer for the as-deposited and 700 °C annealed samples, which disappears at higher temperatures. Finally, considering layers deposited on a H-Si surface, we observe a slight increase of the interfacial thickness after annealing at 700 °C and no further changes for a higher annealing temperature.

Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano

An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

Nanostructured antistatic and antireflective thin films made of indium tin oxide and silica over-coat layer

NASA Astrophysics Data System (ADS)

Cho, Young-Sang; Hong, Jeong-Jin; Yang, Seung-Man; Choi, Chul-Jin

2010-08-01

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.

Low temperature production of large-grain polycrystalline semiconductors

DOEpatents

Naseem, Hameed A [Fayetteville, AR; Albarghouti, Marwan [Loudonville, NY

2007-04-10

An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

Impedance spectroscopy of the oxide films formed during high temperature oxidation of a cobalt-plated ferritic alloy

NASA Astrophysics Data System (ADS)

Velraj, S.; Zhu, J. H.; Painter, A. S.; Du, S. W.; Li, Y. T.

2014-02-01

Impedance spectroscopy was used to evaluate the oxide films formed on cobalt-coated Crofer 22 APU ferritic stainless steel after thermal oxidation at 800 °C in air for different times (i.e. 2, 50, 100 and 500 h). Impedance spectra of the oxide films exhibited two or three semicircles depending on the oxidation time, which correspond to the presence of two or three individual oxide layers. Coupled with scanning electron microscopy/energy-dispersive spectroscopy (SEM/EDS) and X-ray diffraction (XRD), the individual oxide layer corresponding to each semicircle was determined unambiguously. Impedance spectrum analysis of the oxide films formed on the sample after thermal exposure at 800 °C in air for 2 h led to the identification of the low-frequency and high-frequency semicircles as being from Cr2O3 and Co3O4, respectively. SEM/EDS and XRD analysis of the 500-h sample clearly revealed the presence of three oxide layers, analyzed to be Co3-xCrxO4, CoCr2O4, and Cr2O3. Although the SEM images of the 50-h and 100-h samples did not clearly show the CoCr2O4 layer, impedance plots implied their presence. The oxide scales were assigned to their respective semicircles and the electrical properties of Co3-xCrxO4, CoCr2O4 and Cr2O3 were determined from the impedance data.

Studying interfacial reactions of cholesterol sulfate in an unsaturated phosphatidylglycerol layer with ozone using field induced droplet ionization mass spectrometry.

PubMed

Ko, Jae Yoon; Choi, Sun Mi; Rhee, Young Min; Beauchamp, J L; Kim, Hugh I

2012-01-01

Field-induced droplet ionization (FIDI) is a recently developed ionization technique that can transfer ions from the surface of microliter droplets to the gas phase intact. The air-liquid interfacial reactions of cholesterol sulfate (CholSO(4)) in a 1-palmitoyl-2-oleoyl-sn-phosphatidylglycerol (POPG) surfactant layer with ozone (O(3)) are investigated using field-induced droplet ionization mass spectrometry (FIDI-MS). Time-resolved studies of interfacial ozonolysis of CholSO(4) reveal that water plays an important role in forming oxygenated products. An epoxide derivative is observed as a major product of CholSO(4) oxidation in the FIDI-MS spectrum after exposure of the droplet to O(3) for 5 s. The abundance of the epoxide product then decreases with continued O(3) exposure as the finite number of water molecules at the air-liquid interface becomes exhausted. Competitive oxidation of CholSO(4) and POPG is observed when they are present together in a lipid surfactant layer at the air-liquid interface. Competitive reactions of CholSO(4) and POPG with O(3) suggest that CholSO(4) is present with POPG as a well-mixed interfacial layer. Compared with CholSO(4) and POPG alone, the overall ozonolysis rates of both CholSO(4) and POPG are reduced in a mixed layer, suggesting the double bonds of both molecules are shielded by additional hydrocarbons from one another. Molecular dynamics simulations of a monolayer comprising POPG and CholSO(4) correlate well with experimental observations and provide a detailed picture of the interactions between CholSO(4), lipids, and water molecules in the interfacial region. © American Society for Mass Spectrometry, 2011

Electrochromic window with high reflectivity modulation

DOEpatents

Goldner, Ronald B.; Gerouki, Alexandra; Liu, Te-Yang; Goldner, Mark A.; Haas, Terry E.

2000-01-01

A multi-layered, active, thin film, solid-state electrochromic device having a high reflectivity in the near infrared in a colored state, a high reflectivity and transmissivity modulation when switching between colored and bleached states, a low absorptivity in the near infrared, and fast switching times, and methods for its manufacture and switching are provided. In one embodiment, a multi-layered device comprising a first indium tin oxide transparent electronic conductor, a transparent ion blocking layer, a tungsten oxide electrochromic anode, a lithium ion conducting-electrically resistive electrolyte, a complimentary lithium mixed metal oxide electrochromic cathode, a transparent ohmic contact layer, a second indium oxide transparent electronic conductor, and a silicon nitride encapsulant is provided. Through elimination of optional intermediate layers, simplified device designs are provided as alternative embodiments. Typical colored-state reflectivity of the multi-layered device is greater than 50% in the near infrared, bleached-state reflectivity is less than 40% in the visible, bleached-state transmissivity is greater than 60% in the near infrared and greater than 40% in the visible, and spectral absorbance is less than 50% in the range from 0.65-2.5 .mu.m.

Superconductivity-induced magnetization depletion in a ferromagnet through an insulator in a ferromagnet-insulator-superconductor hybrid oxide heterostructure.

PubMed

Prajapat, C L; Singh, Surendra; Paul, Amitesh; Bhattacharya, D; Singh, M R; Mattauch, S; Ravikumar, G; Basu, S

2016-05-21

Coupling between superconducting and ferromagnetic states in hybrid oxide heterostructures is presently a topic of intense research. Such a coupling is due to the leakage of the Cooper pairs into the ferromagnet. However, tunneling of the Cooper pairs though an insulator was never considered plausible. Using depth sensitive polarized neutron reflectivity we demonstrate the coupling between superconductor and magnetic layers in epitaxial La2/3Ca1/3MnO3 (LCMO)/SrTiO3/YBa2Cu3O7-δ (YBCO) hybrid heterostructures, with SrTiO3 as an intervening oxide insulator layer between the ferromagnet and the superconductor. Measurements above and below the superconducting transition temperature (TSC) of YBCO demonstrate a large modulation of magnetization in the ferromagnetic layer below the TSC of YBCO in these heterostructures. This work highlights a unique tunneling phenomenon between the epitaxial layers of an oxide superconductor (YBCO) and a magnetic layer (LCMO) through an insulating layer. Our work would inspire further investigations on the fundamental aspect of a long range order of the triplet spin-pairing in hybrid structures.

Enhanced kinetics of Al{sub 0.97}Ga{sub 0.03}As wet oxidation through the use of hydrogenation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Du, M.; Sagnes, I.; Beaudoin, G.

2006-09-11

This letter reports on a different kinetic behavior of the wet thermal oxidation process resulting in Al{sub x}O{sub y} material depending on the AlAs material growth method, molecular beam epitaxy (MBE) or metal organic vapor phase epitaxy (MOVPE). A higher oxidation rate for MOVPE-grown materia is systemically found. Considering the major role of hydrogen in the wet oxidation reaction, it is believed this observation could be linked with the higher hydrogen residual concentration in MOVPE layers. Using a hydrogen plasma, MBE-grown Al{sub 0.97}Ga{sub 0.03}As layers were hydrogened prior to oxidation. This hydrogenated sample showed a ten times enhanced oxidation ratemore » as compared to the nonhydrogenated Al{sub 0.97}Ga{sub 0.03}As sample. This behavior is mainly attributed to a hydrogen induced modification of the diffusion limited regime, enhancing the diffusion length of oxidizing species and reaction products in the oxidized layers.« less

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Cr incorporated phase transformation in Y2O3 under ion irradiation

PubMed Central

Li, N.; Yadav, S. K.; Xu, Y.; Aguiar, J. A.; Baldwin, J. K.; Wang, Y. Q.; Luo, H. M.; Misra, A.; Uberuaga, B. P.

2017-01-01

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y2O3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1st layer)/100 nm Y2O3 (2nd layer)/135 nm Fe - 20 at.% Cr (3rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y2O3 interface. Further, correlated with Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y2O3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y2O3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys. PMID:28091522

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A modelmore » of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.« less

Cr incorporated phase transformation in Y 2O 3 under ion irradiation

DOE PAGES

Li, Nan; Yadav, Satyesh Kumar; Xu, Yun; ...

2017-01-16

Under irradiation, chemical species can redistribute in ways not expected from equilibrium behavior. In oxide-dispersed ferritic alloys, the phenomenon of irradiation-induced Cr redistribution at the metal/oxide interfaces has drawn recent attention. Here, the thermal and irradiation stability of the FeCr/Y 2O 3 interface has been systematically studied. Trilayer thin films of 90 nm Fe - 20 at.% Cr (1 st layer)/100 nm Y 2O 3 (2 nd layer)/135 nm Fe - 20 at.% Cr (3 rd layer) were deposited on MgO substrates at 500 °C. After irradiation, Cr diffuses towards and enriches the FeCr/Y 2O 3 interface. Further, correlated withmore » Cr redistributed into the oxide, an amorphous layer is generated at the interface. In the Y 2O 3 layer, the original cubic phase is observed to transform to the monoclinic phase after irradiation. Meanwhile, nanosized voids, with relatively larger size at interfaces, are also observed in the oxide layer. First-principles calculations reveal that Cr substitution of Y interstitials in Y 2O 3 containing excess Y interstitials is favored and the irradiation-induced monoclinic phase enhances this process. Lastly, our findings provide new insights that may aid in the development of irradiation resistant oxide-dispersed ferritic alloys.« less

Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

PubMed

Velten, D; Eisenbarth, E; Schanne, N; Breme, J

2004-04-01

Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

Organic hybrid planar-nanocrystalline bulk heterojunctions

DOEpatents

Forrest, Stephen R [Ann Arbor, MI; Yang, Fan [Piscataway, NJ

2011-03-01

A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

Organic hybrid planar-nanocrystalline bulk heterojunctions

DOEpatents

Forrest, Stephen R.; Yang, Fan

2013-04-09

A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

Direct electron injection into an oxide insulator using a cathode buffer layer

PubMed Central

Lee, Eungkyu; Lee, Jinwon; Kim, Ji-Hoon; Lim, Keon-Hee; Seok Byun, Jun; Ko, Jieun; Dong Kim, Young; Park, Yongsup; Kim, Youn Sang

2015-01-01

Injecting charge carriers into the mobile bands of an inorganic oxide insulator (for example, SiO2, HfO2) is a highly complicated task, or even impossible without external energy sources such as photons. This is because oxide insulators exhibit very low electron affinity and high ionization energy levels. Here we show that a ZnO layer acting as a cathode buffer layer permits direct electron injection into the conduction bands of various oxide insulators (for example, SiO2, Ta2O5, HfO2, Al2O3) from a metal cathode. Studies of current–voltage characteristics reveal that the current ohmically passes through the ZnO/oxide-insulator interface. Our findings suggests that the oxide insulators could be used for simply fabricated, transparent and highly stable electronic valves. With this strategy, we demonstrate an electrostatic discharging diode that uses 100-nm SiO2 as an active layer exhibiting an on/off ratio of ∼107, and protects the ZnO thin-film transistors from high electrical stresses. PMID:25864642

Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

2003-11-25

A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO).sub.n and a second stratum of single unit cell layers of an oxide material designated as (A'BO.sub.3).sub.m so that the multilayer film arranged upon the substrate surface is designated (AO).sub.n (A'BO.sub.3).sub.m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A'BO.sub.3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment.

Scavenging of oxygen from SrTiO3 by metals and its implications for oxide thin film deposition

NASA Astrophysics Data System (ADS)

Posadas, Agham; Kormondy, Kristy; Guo, Wei; Ponath, Patrick; Kremer, Jacqueline; Hadamek, Tobias; Demkov, Alexander

SrTiO3 is a widely used substrate for the growth of other functional oxide thin films. However, SrTiO3 loses oxygen very easily during oxide thin film deposition even under relatively high oxygen pressures. In some cases, there will be an interfacial layer of oxygen-deficient SrTiO3 formed at the interface with the deposited oxide film, depending on the metals present in the film. By depositing a variety of metals layer by layer and measuring the evolution of the core level spectra of both the deposited metal and SrTiO3 using x-ray photoelectron spectroscopy, we show that there are three distinct types of behavior that occur for thin metal films on SrTiO3. We discuss the implications of these types of behavior for the growth of complex oxide thin films on SrTiO3, and which oxide thin films are expected to produce an interfacial oxygen-deficient layer depending on their elemental constituents.

Graphene Oxide Nanoribbon as Hole Extraction Layer to Enhance Efficiency and Stability of Polymer Solar Cells

DTIC Science & Technology

2013-01-01

Oxide Nanoribbon as Hole Extraction Layer to Enhance Effi ciency and Stability of Polymer Solar Cells Jun Liu , Gi-Hwan Kim , Yuhua Xue , Jin...circumvented by oxidizing graphene with acids (e.g., H 2 SO 4 /KMnO 4 ) to produce graphene oxide (GO) with oxygen-containing groups (e.g., –COOH, –OH...introducing the oxygen-rich groups around a graphene nanoribbon, the resultant graphene oxide nanoribbon (GOR) should show a synergistic effect to have

Inorganic Substrates and Encapsulation Layers for Transient Electronics

DTIC Science & Technology

2014-07-01

surface oxidation of the nitrides, the measurements were conducted shortly after oxide removal in buffered oxide etchant (BOE) 6:1 (Transene Company Inc...values for the time-dependent dissolution of thermally grown SiO2 (dry oxidation) in buffer solutions (black, pH 7.4; red, pH 8; blue, pH 10...22 5.1.3 Contractor will Identify and Measure Key Performance Characteristics of Candidate Metal Conductive Layers for

Corrosion of NiTi Wires with Cracked Oxide Layer

NASA Astrophysics Data System (ADS)

Racek, Jan; Šittner, Petr; Heller, Luděk; Pilch, Jan; Petrenec, Martin; Sedlák, Petr

2014-07-01

Corrosion behavior of superelastic NiTi shape memory alloy wires with cracked TiO2 surface oxide layers was investigated by electrochemical corrosion tests (Electrochemical Impedance Spectroscopy, Open Circuit Potential, and Potentiodynamic Polarization) on wires bent into U-shapes of various bending radii. Cracks within the oxide on the surface of the bent wires were observed by FIB-SEM and TEM methods. The density and width of the surface oxide cracks dramatically increase with decreasing bending radius. The results of electrochemical experiments consistently show that corrosion properties of NiTi wires with cracked oxide layers (static load keeps the cracks opened) are inferior compared to the corrosion properties of the straight NiTi wires covered by virgin uncracked oxides. Out of the three methods employed, the Electrochemical Impedance Spectroscopy seems to be the most appropriate test for the electrochemical characterization of the cracked oxide layers, since the impedance curves (Nyquist plot) of differently bent NiTi wires can be associated with increasing state of the surface cracking and since the NiTi wires are exposed to similar conditions as the surfaces of NiTi implants in human body. On the other hand, the potentiodynamic polarization test accelerates the corrosion processes and provides clear evidence that the corrosion resistance of bent superelastic NiTi wires degrades with oxide cracking.

Unexpected Voltage Fade in LMR-NMC Oxides Cycled below the “Activation” Plateau

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yan; Bareno, Javier; Bettge, Martin

2015-01-01

A common feature of lithium-excess layered oxides, nominally of composition xLi 2MnO 3•(1-x)LiMO 2 (M = transition metal) is a high-voltage plateau (~4.5 V vs. Li/Li +) in their capacity-voltage profile during the first delithiation cycle. This plateau is believed to result from activation of the Li 2MnO 3 component, which makes additional lithium available for electrochemical cycling. However, oxides cycled beyond this activation plateau are known to display voltage fade which is a continuous reduction in their equilibrium potential. In this article we show that these oxides display gradual voltage fade even on electrochemical cycling in voltage ranges wellmore » below the activation plateau. The average fade is ~0.08 mV-cycle-1 for Li 1.2Ni 0.15Mn 0.55Co 0.1O 2 vs. Li cells after 20 cycles in the 2–4.1 V range at 55°C; a ~54 mV voltage hysteresis, expressed as the difference in average cell voltage between charge and discharge cycles, is also observed. The voltage fade results from a gradual accumulation of local spinel environments in the crystal structure. Some of these spinel sites result from lithium deficiencies during oxide synthesis and are likely to be at the particle surfaces; other sites result from the migration of transition metal atoms in the partially-delithiated LiMO 2 component into the lithium planes during electrochemical cycling. The observed rate of voltage fade depends on a combination of factors that includes the phase equilibrium between the layered and spinel components and the kinetics of transition metal migration.« less