Experimental investigation on a diode-pumped cesium-vapor laser stably operated at continuous-wave and pulse regime.

PubMed

Chen, Fei; Xu, Dongdong; Gao, Fei; Zheng, Changbin; Zhang, Kuo; He, Yang; Wang, Chunrui; Guo, Jin

2015-05-04

Employing a fiber-coupled diode-laser with a center wavelength of 852.25 nm and a line width of 0.17 nm, experimental investigation on diode-end-pumped cesium (Cs) vapor laser stably operated at continuous-wave (CW) and pulse regime is carried out. A 5 mm long cesium vapor cell filled with 60 kPa helium and 20 kPa ethane is used as laser medium. Using an output coupler with reflectivity of 48.79%, 1.26 W 894.57 nm CW laser is obtained at an incident pump power of 4.76 W, corresponding an optical-optical efficiency of 26.8% and a slope-efficiency of 28.8%, respectively. The threshold temperature is 67.5 °C. Stable pulsed cesium laser with a maximum average output power of 2.6 W is obtained at a repetition rate of 76 Hz, and the pulse repetition rate can be extend to 1 kHz with a pulse width of 18 μs.

Diode-pumped passively mode-locked and passively stabilized Nd3+:BaY2F8 laser

NASA Astrophysics Data System (ADS)

Agnesi, Antonio; Guandalini, Annalisa; Tomaselli, Alessandra; Sani, Elisa; Toncelli, Alessandra; Tonelli, Mauro

2004-07-01

Continuous-wave mode locking (CW-ML) of a diode-pumped Nd3+:BaY2F8 laser is reported for the first time to our knowledge. Pulses as short as 4.8 ps were measured with a total output power of almost equal to 1 W at 1049 nm, corresponding to 3.4 W of absorbed power from the pump diode at 806 nm. A novel technique for passive stabilization of CW-ML has been demonstrated.

Comparative study of two intraoral laser techniques for soft tissue surgery

NASA Astrophysics Data System (ADS)

Swick, Michael D.; Richter, Alexander

2003-06-01

Historically, 810nm has been the predominant wavelength used for intraoral surgery, when diode lasers have been discussed, due to their large numbers in the market place. The techniques used intraorally with the 810nm diode have been relatively similar in most cases. Low powers, 1 or 2 watts, using continuous wave, are employed. The purpose of this study is to compare the thermal damage of the technique of using continuous wave at low powers, to using higher powers with a pulse mode and water for coolant, with the 980nm diode wavelength. During the study the laser fiber was held immobile eliminating surgical manipulation as an error. The resultant histology proves, while the volume of vaporization dramatically increases, thus giving the clinician the ability to reduce the time for destructive conduction of excess heat for a given procedure, the amount of coagulation actually decreases in width and depth. As an added benefit charring, which has been implicated in delayed healing is virtually eliminated. This evidence, coupled with excellent clinical results, lends validity to the use of pulsed higher powers and water coolant for the 980nm diode laser.

Diode-side-pumped continuous wave Nd³⁺ : YVO₄ self-Raman laser at 1176 nm.

PubMed

Kores, Cristine Calil; Jakutis-Neto, Jonas; Geskus, Dimitri; Pask, Helen M; Wetter, Niklaus U

2015-08-01

Here we report, to the best of our knowledge, the first diode-side-pumped continuous wave (cw) Nd3+:YVO4 self-Raman laser operating at 1176 nm. The compact cavity design is based on the total internal reflection of the laser beam at the pumped side of the Nd3+:YVO4 crystal. Configurations with a single bounce and a double bounce of the laser beam at the pumped faced have been characterized, providing a quasi-cw peak output power of more than 8 W (multimode) with an optical conversion efficiency of 11.5% and 3.7 W (TEM00) having an optical conversion efficiency of 5.4%, respectively. Cw output power of 1.8 W has been demonstrated.

Diode-pumped continuous-wave Nd:Gd3Ga5O12 lasers at 1406, 1415 and 1423 nm

NASA Astrophysics Data System (ADS)

Lin, Haifeng; Zhu, Wenzhang; Xiong, Feibing; Ruan, Jianjian

2018-05-01

We report a diode-pumped continuous-wave Nd:Gd3Ga5O12 (GGG) laser operating at 1.4 μm spectral region. A dual-wavelength laser at 1423 and 1406 nm is achieved with output power of about 2.59 W at absorbed pump power of 13.4 W. Further increasing the pump power, simultaneous tri-wavelength laser at 1423, 1415 and 1406 nm is also obtained with a maximum output power of 3.96 W at absorbed pump power of 18.9 W. Single-wavelength lasing is also realized at the three emission lines using an intracavity etalon. The laser result is believed to be the highest output power achieved in Nd:GGG crystal, at present, to the best of our knowledge.

Continuous-wave Nd:YVO4/KTiOPO4 green laser at 542 nm under diode pumping into the emitting level

NASA Astrophysics Data System (ADS)

Liu, J. H.

2012-10-01

We report a green laser at 542 nm generation by intracavity frequency doubling of a continuous wave (CW) laser operation of a 1086 nm Nd:YVO4 laser under 880 nm diode pumping into the emitting level 4 F 3/2. A KTiOPO4 (KTP) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 14.5 W, as high as 1.33 W of CW output power at 542 nm is achieved. The optical-to-optical conversion efficiency is up to 9.2%, and the fluctuation of the green output power was better than 3.8% in the given 30 min.

Robust and compact entanglement generation from diode-laser-pumped four-wave mixing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lawrie, B. J.; Yang, Y.; Eaton, M.

Four-wave-mixing processes are now routinely used to demonstrate multi-spatial-mode Einstein- Podolsky-Rosen entanglement and intensity difference squeezing. Recently, diode-laser-pumped four-wave mixing processes have been shown to provide an affordable, compact, and stable source for intensity difference squeezing, but it was unknown if excess phase noise present in power amplifier pump configurations would be an impediment to achieving quadrature entanglement. Here, we demonstrate the operating regimes under which these systems are capable of producing entanglement and under which excess phase noise produced by the amplifier contaminates the output state. We show that Einstein-Podolsky-Rosen entanglement in two mode squeezed states can be generatedmore » by a four-wave-mixing source deriving both the pump field and the local oscillators from a tapered-amplifier diode-laser. In conclusion, this robust continuous variable entanglement source is highly scalable and amenable to miniaturization, making it a critical step toward the development of integrated quantum sensors and scalable quantum information processors, such as spatial comb cluster states.« less

Robust and compact entanglement generation from diode-laser-pumped four-wave mixing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lawrie, B. J., E-mail: lawriebj@ornl.gov; Pooser, R. C.; Yang, Y.

Four-wave-mixing processes are now routinely used to demonstrate multi-spatial-mode Einstein-Podolsky-Rosen entanglement and intensity difference squeezing. Diode-laser-pumped four-wave mixing processes have recently been shown to provide an affordable, compact, and stable source for intensity difference squeezing, but it was unknown if excess phase noise present in power amplifier pump configurations would be an impediment to achieving quadrature entanglement. Here, we demonstrate the operating regimes under which these systems are capable of producing entanglement and under which excess phase noise produced by the amplifier contaminates the output state. We show that Einstein-Podolsky-Rosen entanglement in two mode squeezed states can be generated bymore » a four-wave-mixing source deriving both the pump field and the local oscillators from a tapered-amplifier diode-laser. This robust continuous variable entanglement source is highly scalable and amenable to miniaturization, making it a critical step toward the development of integrated quantum sensors and scalable quantum information processors, such as spatial comb cluster states.« less

Robust and compact entanglement generation from diode-laser-pumped four-wave mixing

DOE PAGES

Lawrie, B. J.; Yang, Y.; Eaton, M.; ...

2016-04-11

Four-wave-mixing processes are now routinely used to demonstrate multi-spatial-mode Einstein- Podolsky-Rosen entanglement and intensity difference squeezing. Recently, diode-laser-pumped four-wave mixing processes have been shown to provide an affordable, compact, and stable source for intensity difference squeezing, but it was unknown if excess phase noise present in power amplifier pump configurations would be an impediment to achieving quadrature entanglement. Here, we demonstrate the operating regimes under which these systems are capable of producing entanglement and under which excess phase noise produced by the amplifier contaminates the output state. We show that Einstein-Podolsky-Rosen entanglement in two mode squeezed states can be generatedmore » by a four-wave-mixing source deriving both the pump field and the local oscillators from a tapered-amplifier diode-laser. In conclusion, this robust continuous variable entanglement source is highly scalable and amenable to miniaturization, making it a critical step toward the development of integrated quantum sensors and scalable quantum information processors, such as spatial comb cluster states.« less

Non-reciprocal geometric wave diode by engineering asymmetric shapes of nonlinear materials.

PubMed

Li, Nianbei; Ren, Jie

2014-08-29

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports.

Micro and nano devices in passive millimetre wave imaging systems

NASA Astrophysics Data System (ADS)

Appleby, R.

2013-06-01

The impact of micro and nano technology on millimetre wave imaging from the post war years to the present day is reviewed. In the 1950s whisker contacted diodes in mixers and vacuum tubes were used to realise both radiometers and radars but required considerable skill to realise the performance needed. Development of planar semiconductor devices such as Gunn and Schottky diodes revolutionised mixer performance and provided considerable improvement. The next major breakthrough was high frequency transistors based on gallium arsenide which were initially used at intermediate frequencies but later after further development at millimeter wave frequencies. More recently Monolithic Microwave Integrated circuits(MMICs) offer exceptional performance and the opportunity for innovative design in passive imaging systems. In the future the use of micro and nano technology will continue to drive system performance and we can expect to see integration of antennae, millimetre wave and sub millimetre wave circuits and signal processing.

Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

PubMed Central

Li, Nianbei; Ren, Jie

2014-01-01

Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study the novel design of wave diode devices by engineering asymmetric shapes of nonlinear materials to realize the function of non-reciprocal wave propagations. We first show analytical results revealing that both nonlinearity and asymmetry are necessary to induce such non-reciprocal (asymmetric) wave propagations. Detailed numerical simulations are further performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect is demonstrated. Finally, we discuss the scalability of geometric wave diodes. The results open a flexible way for designing wave diodes efficiently simply through shape engineering of nonlinear materials, which may find broad implications in controlling energy, mass and information transports. PMID:25169668

Compact near-IR and mid-IR cavity ring down spectroscopy device

NASA Technical Reports Server (NTRS)

Miller, J. Houston (Inventor)

2011-01-01

This invention relates to a compact cavity ring down spectrometer for detection and measurement of trace species in a sample gas using a tunable solid-state continuous-wave mid-infrared PPLN OPO laser or a tunable low-power solid-state continuous wave near-infrared diode laser with an algorithm for reducing the periodic noise in the voltage decay signal which subjects the data to cluster analysis or by averaging of the interquartile range of the data.

The generation of a continuous-wave Nd:YVO4/LBO laser at 543 nm by direct in-band diode pumping at 888 nm

NASA Astrophysics Data System (ADS)

Fu, S. C.; Wang, X.; Chu, H.

2013-02-01

We report the generation of a green laser at 543 nm by intracavity frequency doubling of the continuous-wave (cw) laser operation of a 1086 nm Nd:YVO4 laser under 888 nm diode pumping into the emitting level 4F3/2. An LiB3O5 (LBO) crystal, cut for critical type I phase matching at room temperature, is used for the laser second-harmonic generation. At an incident pump power of 17.8 W, as high as 4.53 W cw output power at 543 nm is achieved. The optical-to-optical conversion efficiency is up to 25.4%, and the fluctuation of the green output power is better than 2.3% in a 30 min period.

Tunable diode laser-pumped Tm,Ho:YLF laser operated in continuous-wave and Q-switched modes

NASA Technical Reports Server (NTRS)

Mcguckin, B. T.; Hemmati, H.; Menzies, R. T.

1992-01-01

Tunable continuous-wave and pulsed laser output was obtained from a Tm-sensitized Ho:YLiF4 crystal at subambient temperatures when longitudinally pumped with a diode laser array. A conversion efficiency of 42 percent and slope efficiency of approximately 60 percent relative to the absorbed pumped power have been achieved at a crystal temperature of 275 K. The emission spectrum was etalon tunable over a range of 16/cm centered at 2067 nm with fine tuning capability of the transition frequency with crystal temperature at measured rate of -0.03/cm/K. Output energies of 0.22 mJ per pulse and 22 ns pulse duration were recorded at Q-switch frequencies that correspond to an effective upper laser level lifetime of 6 ms, and a pulse energy extraction efficiency of 64 percent.

Efficient diode-pumped Tm:KYW 1.9-μm microchip laser with 1 W cw output power.

PubMed

Gaponenko, Maxim; Kuleshov, Nikolay; Südmeyer, Thomas

2014-05-19

We report on a diode-pumped Tm:KYW microchip laser generating 1 W continuous-wave output power. The laser operates at a wavelength of 1.94 μm in the fundamental TEM(00) mode with 71% slope efficiency relative to the absorbed pump radiation and 59% slope efficiency relative to the incident pump radiation. The optical-to-optical laser efficiency is 43%.

A compact, inexpensive infrared laser system for continuous-wave optical stimulation of the rat prostate cavernous nerves

NASA Astrophysics Data System (ADS)

Perkins, William C.; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2014-03-01

Optical nerve stimulation (ONS) has been commonly performed in the laboratory using high-power, pulsed, infrared (IR) lasers including Holmium:YAG, diode, and Thulium fiber lasers. However, the relatively high cost of these lasers in comparison with conventional electrical nerve stimulation (ENS) equipment may represent a significant barrier to widespread adoption of ONS. Optical stimulation of the prostate cavernous nerves (CN's) has recently been reported using lower cost, continuous-wave (CW), all-fiber-based diode lasers. This preliminary study describes further miniaturization and cost reduction of the ONS system in the form of a compact, lightweight, cordless, and inexpensive IR laser. A 140-mW, 1560-nm diode laser was integrated with a green aiming beam and delivery optics into a compact ONS system. Surface and subsurface ONS was performed in a total of 5 rats, in vivo, with measurement of an intracavernous pressure (ICP) response during CW laser irradiation for 30 s with a spot diameter of 0.7 mm. Short-term, CW ONS of the prostate CN's is feasible using a compact, inexpensive, batterypowered IR laser diode system. This ONS system may represent an alternative to ENS for laboratory studies, and with further development, a handheld option for ONS in the clinic to identify and preserve the CN's during prostate cancer surgery.

Nonlinear optical detection of terahertz-wave radiation from resonant tunneling diodes.

PubMed

Takida, Yuma; Nawata, Kouji; Suzuki, Safumi; Asada, Masahiro; Minamide, Hiroaki

2017-03-06

The sensitive detection of terahertz (THz)-wave radiation from compact sources at room temperature is crucial for real-world THz-wave applications. Here, we demonstrate the nonlinear optical detection of THz-wave radiation from continuous-wave (CW) resonant tunneling diodes (RTDs) at 0.58, 0.78, and 1.14 THz. The up-conversion process in a MgO:LiNbO₃ crystal under the noncollinear phase-matching condition offers efficient wavelength conversion from a THz wave to a near-infrared (NIR) wave that is detected using a commercial NIR photodetector. The minimum detection limit of CW THz-wave power is as low as 5 nW at 1.14 THz, corresponding to 2-aJ energy and 2.7 × 10³ photons within the time window of a 0.31-ns pump pulse. Our results show that the input frequency and power of RTD devices can be calibrated by measuring the output wavelength and energy of up-converted waves, respectively. This optical detection technique for compact electronic THz-wave sources will open up a new opportunity for the realization of real-world THz-wave applications.

Continuous-wave and Q-switched microchip laser performance of Yb:Y3Sc2Al3O12 crystals.

PubMed

Dong, Jun; Ueda, Ken-ichi; Kaminskii, Alexander A

2008-04-14

Optical properties of Yb:Y(3)Sc(2)Al(3)O(12) crystal were investigated and compared with those from Yb:YAG crystals. The broad absorption and emission spectra of Yb:Y(3)Sc(2)Al(3)O(12) show that this crystal is very suitable for laser-diode pumping and ultrafast laser pulse generation. Laser-diode pumped continuous-wave and passively Q-switched Yb:Y(3)Sc(2)Al(3)O(12) lasers with Cr(4+):YAG crystals as saturable absorber have been demonstrated for the first time. Continuous-wave output power of 1.12 W around 1032 nm (multi-longitudinal modes) was measured with an optical-to-optical efficiency of 30%. Laser pulses with pulse energy of over 31 microJ and pulse width of 2.5 ns were measured at repetition rate of over 12.7 kHz; a corresponding peak power of over 12 kW was obtained. The longitudinal mode selection by a thin plate of Cr(4+):YAG as an intracavity etalon was also observed in passively Q-switched Yb:Y(3)Sc(2)Al(2)O(12) microchip lasers.

High repetition-rate Q-switched and intracavity doubled diode-pumped Nd:YAG laser

NASA Technical Reports Server (NTRS)

Hemmati, Hamid; Lesh, James R.

1992-01-01

A Nd:YAG laser was end pumped with 2.2 W of continuous-wave (CW) diode laser output. Efficient operation of the laser at high repetition rates was emphasized. This laser provides 890 mW of TEM00 CW output at 1064 nm, and 340 mW of 532 nm average power at a Q-switched repetition rate of 25 kHz. Experimental data are compared with analysis.

Generation conditions of CW Diode Laser Sustained Plasma

NASA Astrophysics Data System (ADS)

Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

2016-09-01

Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Real-time continuous-wave terahertz line scanner based on a compact 1 × 240 InGaAs Schottky barrier diode array detector.

PubMed

Han, Sang-Pil; Ko, Hyunsung; Kim, Namje; Lee, Won-Hui; Moon, Kiwon; Lee, Il-Min; Lee, Eui Su; Lee, Dong Hun; Lee, Wangjoo; Han, Seong-Tae; Choi, Sung-Wook; Park, Kyung Hyun

2014-11-17

We demonstrate real-time continuous-wave terahertz (THz) line-scanned imaging based on a 1 × 240 InGaAs Schottky barrier diode (SBD) array detector with a scan velocity of 25 cm/s, a scan line length of 12 cm, and a pixel size of 0.5 × 0.5 mm². Foreign substances, such as a paper clip with a spatial resolution of approximately 1 mm that is hidden under a cracker, are clearly detected by this THz line-scanning system. The system consists of the SBD array detector, a 200-GHz gyrotron source, a conveyor system, and several optical components such as a high-density polyethylene cylindrical lens, metal cylindrical mirror, and THz wire-grid polarizer. Using the THz polarizer, the signal-to-noise ratio of the SBD array detector improves because the quality of the source beam is enhanced.

Towards terahertz detection and calibration through spontaneous parametric down-conversion in the terahertz idler-frequency range generated by a 795 nm diode laser system

NASA Astrophysics Data System (ADS)

Kornienko, Vladimir V.; Kitaeva, Galiya Kh.; Sedlmeir, Florian; Leuchs, Gerd; Schwefel, Harald G. L.

2018-05-01

We study a calibration scheme for terahertz wave nonlinear-optical detectors based on spontaneous parametric down-conversion. Contrary to the usual low wavelength pump in the green, we report here on the observation of spontaneous parametric down-conversion originating from an in-growth poled lithium niobate crystal pumped with a continuous wave 50 mW, 795 nm diode laser system, phase-matched to a terahertz frequency idler wave. Such a system is more compact and allows for longer poling periods as well as lower losses in the crystal. Filtering the pump radiation by a rubidium-87 vapor cell allowed the frequency-angular spectra to be obtained down to ˜0.5 THz or ˜1 nm shift from the pump radiation line. The presence of an amplified spontaneous emission "pedestal" in the diode laser radiation spectrum significantly hampers the observation of spontaneous parametric down-conversion spectra, in contrast to conventional narrowband gas lasers. Benefits of switching to longer pump wavelengths are pointed out, such as collinear optical-terahertz phase-matching in bulk crystals.

CW lasing of Ho in KLu(WO4)2 in-band pumped by a diode-pumped Tm:KLu(WO4)2 laser.

PubMed

Mateos, Xavier; Jambunathan, Venkatesan; Pujol, Maria Cinta; Carvajal, Joan Josep; Díaz, Francesc; Aguiló, Magdalena; Griebner, Uwe; Petrov, Valentin

2010-09-27

We demonstrate continuous wave (CW) room temperature laser operation of the monoclinic Ho(3+)-doped KLu(WO(4))(2) crystal using a diode-pumped Tm(3+):KLu(WO(4))(2) laser for in-band pumping. The slope efficiency achieved amounts to ~55% with respect to the absorbed power and the maximum output power of 648 mW is generated at 2078 nm.

Effects of continuous wave and fractionated diode laser on human fibroblast cancer and dermal normal cells by zinc phthalocyanine in photodynamic therapy: A comparative study.

PubMed

Navaeipour, Farzaneh; Afsharan, Hadi; Tajalli, Habib; Mollabashi, Mahmood; Ranjbari, Farideh; Montaseri, Azadeh; Rashidi, Mohammad-Reza

2016-08-01

In this experimental study, cancer and normal cells behavior during an in vitro photodynamic therapy (PDT) under exposure of continuous wave (CW) and fractionated mode of laser with different irradiation power and time intervals was compared and investigated. At the first, human fibroblast cancer cell line (SW 872) and human dermal normal (HFFF2) cell line were incubated with different concentrations of zinc phthalocyanine (ZnPc), as a PDT drug. The cells, then, were irradiated with a 675nm diode laser and the cell viability was evaluated using MTT assay. Under optimized conditions, the viability of the cancer cells was eventually reduced to 3.23% and 13.17%, and that of normal cells was decreased to 20.83% and 36.23% using CW and fractionated diode lasers, respectively. In general, the ratio of ZnPc LD50 values for the normal cells to the cancer cells with CW laser was much higher than that of the fractionated laser. Subsequently, cancer cells in comparison with normal ones were found to be more sensitive toward the photodynamic damage induced by ZnPc. In addition, treatment with CW laser was found to be more effective against the cancer cells with a lower toxicity to the normal cells compared with the fractionated diode laser. Copyright © 2016 Elsevier B.V. All rights reserved.

Thermal effects of λ = 808 nm GaAlAs diode laser irradiation on different titanium surfaces.

PubMed

Giannelli, Marco; Lasagni, Massimo; Bani, Daniele

2015-12-01

Diode lasers are widely used in dental laser treatment, but little is known about their thermal effects on different titanium implant surfaces. This is a key issue because already a 10 °C increase over the normal body temperature can induce bone injury and compromise osseo-integration. The present study aimed at evaluating the temperature changes and surface alterations experienced by different titanium surfaces upon irradiation with a λ = 808 nm diode laser with different settings and modalities. Titanium discs with surfaces mimicking different dental implant surfaces including TiUnite and anodized, machined surfaces were laser-irradiated in contact and non-contact mode, and with and without airflow cooling. Settings were 0.5-2.0 W for the continuous wave mode and 10-45 μJ, 20 kHz, 5-20 μs for the pulsed wave mode. The results show that the surface characteristics have a marked influence on temperature changes in response to irradiation. The TiUnite surface, corresponding to the osseous interface of dental implants, was the most susceptible to thermal rise, while the machined surfaces, corresponding to the implant collar, were less affected. In non-contact mode and upon continuous wave emission, the temperature rose above the 50 °C tissue damage threshold. Scanning electron microscopy investigation of surface alterations revealed that laser treatment in contact mode resulted in surface scratches even when no irradiation was performed. These findings indicate that the effects of diode laser irradiation on implant surfaces depend on physical features of the titanium coating and that in order to avoid thermal or physical damage to implant surface the irradiation treatment has to be carefully selected.

Diode pumped solid-state laser oscillators for spectroscopic applications

NASA Technical Reports Server (NTRS)

Byer, R. L.; Basu, S.; Fan, T. Y.; Kozlovsky, W. J.; Nabors, C. D.; Nilsson, A.; Huber, G.

1987-01-01

The rapid improvement in diode laser pump sources has led to the recent progress in diode laser pumped solid state lasers. To date, electrical efficiencies of greater than 10 percent were demonstrated. As diode laser costs decrease with increased production volume, diode laser and diode laser array pumped solid state lasers will replace the traditional flashlamp pumped Nd:YAG laser sources. The use of laser diode array pumping of slab geometry lasers will allow efficient, high peak and average power solid state laser sources to be developed. Perhaps the greatest impact of diode laser pumped solid state lasers will be in spectroscopic applications of miniature, monolithic devices. Single-stripe diode-pumped operation of a continuous-wave 946 nm Nd:YAG laser with less than 10 m/w threshold was demonstrated. A slope efficiency of 16 percent near threshold was shown with a projected slope efficiency well above a threshold of 34 percent based on results under Rhodamine 6G dye-laser pumping. Nonlinear crystals for second-harmonic generation of this source were evaluated. The KNbO3 and periodically poled LiNbO3 appear to be the most promising.

Visibility and aerosol measurement by diode-laser random-modulation CW lidar

NASA Technical Reports Server (NTRS)

Takeuchi, N.; Baba, H.; Sakurai, K.; Ueno, T.; Ishikawa, N.

1986-01-01

Examples of diode laser (DL) random-modulation continuous wave (RM-CW) lidar measurements are reported. The ability of the measurement of the visibility, vertical aerosol profile, and the cloud ceiling height is demonstrated. Although the data shown here were all measured at night time, the daytime measurement is, of course, possible. For that purpose, accurate control of the laser frequency to the center frequency of a narrow band filter is required. Now a new system with a frequency control is under construction.

Continuous-Wave Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking Using Feedback from a Fiber Bragg Grating

NASA Technical Reports Server (NTRS)

Duerksen, Gary L.; Krainak, Michael A.

1998-01-01

Single-frequency operation of uncoated Fabry-Perot laser diodes is demonstrated by phase- locking the laser oscillations through self-injection seeding with feedback from a fiber Bragg grating. By precisely tuning the laser temperature so that an axial-mode coincides with the short-wavelength band edge of the grating, the phase of the feedback is made conjugate to that of the axial mode, locking the phase of the laser oscillations to that mode.

Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode

NASA Astrophysics Data System (ADS)

Kong, Duanhua; Kim, Taek; Kim, Sihan; Hong, Hyungi; Shcherbatko, Igor; Park, Youngsoo; Shin, Dongjae; Ha, Kyoung-Ho; Jeong, Gitae

2014-03-01

We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.

Laser excitation dynamics of argon metastables generated in atmospheric pressure flows by microwave frequency microplasma arrays

NASA Astrophysics Data System (ADS)

Rawlins, W. T.; Galbally-Kinney, K. L.; Davis, S. J.; Hoskinson, A. R.; Hopwood, J. A.

2014-03-01

The optically pumped rare-gas metastable laser is a chemically inert analogue to diode-pumped alkali (DPAL) and alkali-exciplex (XPAL) laser systems. Scaling of these devices requires efficient generation of electronically excited metastable atoms in a continuous-wave electric discharge in flowing gas mixtures at atmospheric pressure. This paper describes initial investigations of the use of linear microwave micro-discharge arrays to generate metastable rare-gas atoms at atmospheric pressure in optical pump-and-probe experiments for laser development. Power requirements to ignite and sustain the plasma at 1 atm are low, <30 W. We report on the laser excitation dynamics of argon metastables, Ar (4s, 1s5) (Paschen notation), generated in flowing mixtures of Ar and He at 1 atm. Tunable diode laser absorption measurements indicate Ar(1s5) concentrations near 3 × 1012 cm-3 at 1 atm. The metastables are optically pumped by absorption of a focused beam from a continuous-wave Ti:S laser, and spectrally selected fluorescence is observed with an InGaAs camera and an InGaAs array spectrometer. We observe the optical excitation of the 1s5-->2p9 transition at 811.5 nm and the corresponding laser-induced fluorescence on the 2p10-->1s5 transition at 912.3 nm; the 2p10 state is efficiently populated by collisional energy transfer from 2p9. Using tunable diode laser absorption/gain spectroscopy, we observe small-signal gains of ~1 cm-1 over a 1.9 cm path. We also observe stable, continuous-wave laser oscillation at 912.3 nm, with preliminary optical efficiency ~55%. These results are consistent with efficient collisional coupling within the Ar(4s) manifold.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

NASA Astrophysics Data System (ADS)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Diode-pumped continuous wave and passively Q-switched Tm, Mg: LiTaO₃ lasers.

PubMed

Feng, T; Li, T; Zhao, S; Li, Q; Yang, K; Zhao, J; Qiao, W; Hang, Y; Zhang, P; Wang, Y; Xu, J

2014-02-24

We have demonstrated the continuous wave and passively Q-switched Tm, Mg: LiTaO3 lasers for the first time. In continuous wave (CW) regime, a maximum CW output power of 1.03 W at 1952 nm was obtained, giving a slope efficiency of 9.5% and a beam quality M2 = 2.2. In passive Q-switching regime, a single walled carbon nanotube (SWCNT) was employed as saturable absorber (SA). The Tm,Mg:LiTaO3 laser has yielded a pulse of 560 ns under repetition rate of 34.2 kHz at 1926 nm, corresponding to a single pulse energy of 10.1 μJ. The results indicate a promising potential of nonlinear crystals in the applications for laser host materials.

New PbSnTe heterojunction laser diode structures with improved performance

NASA Technical Reports Server (NTRS)

Fonstad, C. G.; Kasemset, D.; Hsieh, H. H.; Rotter, S.

1980-01-01

Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.

Active graphene-silicon hybrid diode for terahertz waves.

PubMed

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Active graphene–silicon hybrid diode for terahertz waves

PubMed Central

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-01-01

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

Dual-wavelength mid-infrared CW and Q-switched laser in diode end-pumped Tm,Ho:GdYTaO4 crystal

NASA Astrophysics Data System (ADS)

Wang, Beibei; Gao, Congcong; Dou, Renqin; Nie, Hongkun; Sun, Guihua; Liu, Wenpeng; Yu, Haijuan; Wang, Guoju; Zhang, Qingli; Lin, Xuechun; He, Jingliang; Wang, Wenjun; Zhang, Bingyuan

2018-02-01

Dual-wavelength continuous-wave and Q-switched lasers are demonstrated in a Tm,Ho:GdYTaO4 crystal under 790 nm laser diode end pumping for the first time to the best of our knowledge. The laser operates with a dual wavelength at 1949.677 nm and 2070 nm for continuous-wave with a spacing of about 120 nm. The maximum output power is 0.332 W with a pump power of 3 W. By using graphene as the saturable absorber, a passively Q-switched operation is performed with a dual-wavelength at 1950.323 nm and 2068.064 nm with a wavelength interval of about 118 nm. The maximum average output power of the Q-switched laser goes up to 200 mW with a minimum pulse duration of 1.2 µs and a maximum repetition rate of 34.72 kHz.

Diode-pumped continuous-wave and passively Q-switched 1066 nm Nd:GYNbO4 laser

NASA Astrophysics Data System (ADS)

Ma, Yufei; Peng, Zhenfang; He, Ying; Li, Xudong; Yan, Renpeng; Yu, Xin; Zhang, Qingli; Ding, Shoujun; Sun, Dunlu

2017-08-01

A diode-pumped passively Q-switched 1066 nm laser with a novel Nd:Gd0.69Y0.3NbO4 mixed crystal was demonstrated for the first time to the best of our knowledge. In the continuous-wave (CW) operation, optimization selection of output couplers was carried out, and a maximum output power of 2.13 W was obtained when the plane mirror with transmission of 25% was chosen and the absorbed pump power was 10.5 W. The Cr4+:YAG passively Q-switched Nd:Gd0.69Y0.3NbO4 laser performance was investigated. At an absorbed pump power of 10.5 W, using Cr4+:YAG with initial transmission of 80%, the obtained minimum pulse width was 7.2 ns with the pulse repetition rate of 19 kHz. The single pulse energy and peak power were estimated to be 26.7 µJ and 3.7 kW, respectively.

Investigative study of a diode-pumped continuous-wave Tm:YAP laser as an efficient 1.94 μm pump source

NASA Astrophysics Data System (ADS)

Kwiatkowski, Jacek; Zendzian, Waldemar; Jabczynski, Jan K.

2016-12-01

A detailed study of a Tm:YAP laser in continuous-wave (CW), single-pass end-pumped by a 793 nm diode laser is presented. The laser based on c-cut 3 at. % Tm:YAP crystal was experimentally examined and presented in the dependence on transmittance and radius of curvature of output coupling mirrors. A detailed spectral analysis was presented. The influence of a heat-sink cooling water temperature on the laser performance was studied. At room temperature, for an output coupling transmission of 19.5%, the maximum CW output power of 4.53 W was achieved, corresponding to a slope efficiency of 41.5% and an optical-to-optical conversion efficiency of 25.7% with respect to the incident pump power, respectively. We have shown that the output spectrum at a certain wavelength (e.g. 1940 nm) for a given pump power can be realized via the change of resonator parameters (OC transmittance, mode size).

Compact lidar system using laser diode, binary continuous wave power modulation, and an avalanche photodiode-based receiver controlled by a digital signal processor

NASA Astrophysics Data System (ADS)

Ardanuy, Antoni; Comerón, Adolfo

2018-04-01

We analyze the practical limits of a lidar system based on the use of a laser diode, random binary continuous wave power modulation, and an avalanche photodiode (APD)-based photereceiver, combined with the control and computing power of the digital signal processors (DSP) currently available. The target is to design a compact portable lidar system made all in semiconductor technology, with a low-power demand and an easy configuration of the system, allowing change in some of its features through software. Unlike many prior works, we emphasize the use of APDs instead of photomultiplier tubes to detect the return signal and the application of the system to measure not only hard targets, but also medium-range aerosols and clouds. We have developed an experimental prototype to evaluate the behavior of the system under different environmental conditions. Experimental results provided by the prototype are presented and discussed.

Compact diode-pumped continuous-wave and passively Q-switched Nd:GYSO laser at 1.07 μm

NASA Astrophysics Data System (ADS)

Lin, Zhi; Huang, Xiaoxu; Lan, Jinglong; Cui, Shengwei; Wang, Yi; Xu, Bin; Luo, Zhengqian; Xu, Huiying; Cai, Zhiping; Xu, Xiaodong; Zhang, Xiaoyan; Wang, Jun; Xu, Jun

2016-08-01

We report diode-pumped continuous-wave (CW) and Q-switched Nd:GYSO lasers using a compact two-mirror linear laser cavity. Single-wavelength laser emissions at 1074.11 nm with 4.1-W power and at 1058.27 nm with 1.47-W power have been obtained in CW mode. The slope efficiencies with respect to the absorbed pump powers are 48.5% and 22.9%, respectively. Wavelength tunability is also demonstrated with range of about 8 nm. Using a MoS2 saturable absorber, maximum average output power up to 410 mW at 1074 nm can be yielded with absorbed pump power 6.41 W and the maximum pulse energy reaches 1.20 μJ with pulse repetition rate of 342.5 kHz and shortest pulse width of 810 ns. The CW laser results represent the best laser performance and the Q-switching also present the highest output power for Q-switched Nd3+ lasers with MoS2 as saturable absorber.

kW-class diode laser bars

NASA Astrophysics Data System (ADS)

Strohmaier, S. G.; Erbert, G.; Meissner-Schenk, A. H.; Lommel, M.; Schmidt, B.; Kaul, T.; Karow, M.; Crump, P.

2017-02-01

Progress will be presented on ongoing research into the development of ultra-high power and efficiency bars achieving significantly higher output power, conversion efficiency and brightness than currently commercially available. We combine advanced InAlGaAs/GaAs-based epitaxial structures and novel lateral designs, new materials and superior cooling architectures to enable improved performance. Specifically, we present progress in kilowatt-class 10-mm diode laser bars, where recent studies have demonstrated 880 W continuous wave output power from a 10 mm x 4 mm laser diode bar at 850 A of electrical current and 15°C water temperature. This laser achieves < 60% electro-optical efficiency at 880 W CW output power.

A diode-pumped Nd:YAlO3 dual-wavelength yellow light source

NASA Astrophysics Data System (ADS)

Zhang, Jing; Fu, Xihong; Zhai, Pei; Xia, Jing; Li, Shutao

2013-11-01

We present what is, to the best of our knowledge, the first diode-pumped Nd:YAlO3 (Nd:YAP) continuous-wave (cw) dual-wavelength yellow laser at 593 nm and 598 nm, based on sum-frequency generation between 1064 and 1339 nm in a-axis polarization using LBO crystal and between 1079 and 1341 nm in c-axis polarization using PPKTP crystal, respectively. At an incident pump power of 17.3 W, the maximum output power obtained at 593 nm and 598 nm is 0.18 W and 1.86 W, respectively. The laser experiment shows that Nd:YAP crystal can be used for an efficient diode-pumped dual-wavelength yellow laser system.

Laser Demonstration of Diode-Pumped Nd3+-Doped Fluorapatite Anisotropic Ceramics

NASA Astrophysics Data System (ADS)

Akiyama, Jun; Sato, Yoichi; Taira, Takunori

2011-02-01

We report the first demonstration of a diode-pumped anisotropic ceramic laser that uses microdomain-controlled neodymium-doped hexagonal fluorapatite [Nd3+:Ca10(PO4)6F2, Nd:FAP] polycrystalline ceramics as the gain medium, which were fabricated by the rare-earth-assisted magnetic grain-orientation control method, as a step toward achieving giant micro photonics. The laser delivers 1063.10 and 1063.22 nm output beams when pumped with a central wavelength of 807.5 nm and a 2 nm bandwidth diode laser operating in quasi-continuous-wave (QCW) mode. We obtained a maximum QCW peak power of 255 mW with an uncoated 2 at. % Nd:FAP material.

The effects of diode laser on Staphylococcus aureus biofilm and Escherichia coli lipopolysaccharide adherent to titanium oxide surface of dental implants. An in vitro study.

PubMed

Giannelli, Marco; Landini, Giulia; Materassi, Fabrizio; Chellini, Flaminia; Antonelli, Alberto; Tani, Alessia; Zecchi-Orlandini, Sandra; Rossolini, Gian Maria; Bani, Daniele

2016-11-01

Effective decontamination of biofilm and bacterial toxins from the surface of dental implants is a yet unresolved issue. This in vitro study aims at providing the experimental basis for possible use of diode laser (λ 808 nm) in the treatment of peri-implantitis. Staphylococcus aureus biofilm was grown for 48 h on titanium discs with porous surface corresponding to the bone-implant interface and then irradiated with a diode laser (λ 808 nm) in noncontact mode with airflow cooling for 1 min using a Ø 600-μm fiber. Setting parameters were 2 W (400 J/cm 2 ) for continuous wave mode; 22 μJ, 20 kHz, 7 μs (88 J/cm 2 ) for pulsed wave mode. Bactericidal effect was evaluated using fluorescence microscopy and counting the residual colony-forming units. Biofilm and titanium surface morphology were analyzed by scanning electron microscopy (SEM). In parallel experiments, the titanium discs were coated with Escherichia coli lipopolysaccharide (LPS), laser-irradiated and seeded with RAW 264.7 macrophages to quantify LPS-driven inflammatory cell activation by measuring the enhanced generation of nitric oxide (NO). Diode laser irradiation in both continuous and pulsed modes induced a statistically significant reduction of viable bacteria and nitrite levels. These results indicate that in addition to its bactericidal effect laser irradiation can also inhibit LPS-induced macrophage activation and thus blunt the inflammatory response. The λ 808-nm diode laser emerges as a valuable tool for decontamination/detoxification of the titanium implant surface and may be used in the treatment of peri-implantitis.

Healing effects and superoxide dismutase activity of diode/Ga-As lasers in a rabbit model of osteoarthritis.

PubMed

Lee, Jae Yeon; Lee, Sang Ui; Lim, Taekjoo; Choi, Seok Hwa

2014-01-01

Osteoarthritis is a major cause of pain and disability in joints. The present study investigated the effects of differences of wavelengths and continuous versus pulsed delivery modes of low-level laser therapy (LLT) in a rabbit model of osteoarthritis. Comparison of the healing effects and superoxide dismutase (SOD) activity between therapy using diode and Ga-As lasers was our primary interest. Simple continuous wave (808-nm diode) and super-pulsed wave (904-nm Ga-As) lasers were used. Osteoarthritis was induced by injecting hydrogen peroxide into the articular spaces of the right stifle in rabbits. The rabbits were randomly assigned to four groups: normal control without osteoarthritis induction (G1), osteoarthritis-induction group without treatment (G2), osteoarthritis induction with diode irradiation (G3), and osteoarthritis induction with Ga-As irradiation (G4). Laser irradiation was applied transcutaneously for 5 min every day for over four weeks, starting the first day after confirmation of induction of osteoarthritis. The induction of osteoarthritis and effects of LLT were evaluated by biochemistry, computed tomography, and histological analyses. The SOD activity in G3 and G4 rabbits at two and four weeks after laser irradiation was significantly higher than that of G1 animals (p<0.05). However, there was no significant difference between G3 and G4 animals. Moreover, there were significant differences at two and four weeks between the control and osteoarthritis-induction groups, but no significant difference between G3 and G4 in the computed tomographic analyses and histological findings. These results indicate that diode and Ga-As lasers are similarly effective in healing and inducing SOD activity for LLT applications in a rabbit model of OA. Copyright © 2014 International Institute of Anticancer Research (Dr. John G. Delinassios), All rights reserved.

Highly efficient continuous-wave laser operation of LD-pumped Nd,Gd:CaF2 and Nd,Y:CaF2 crystals

NASA Astrophysics Data System (ADS)

Pang, Siyuan; Ma, Fengkai; Yu, Hao; Qian, Xiaobo; Jiang, Dapeng; Wu, Yongjing; Zhang, Feng; Liu, Jie; Xu, Jiayue; Su, Liangbi

2018-05-01

Spectroscopic properties of Nd:CaF2 crystals are investigated. The photoluminescence intensity in the near infrared region is drastically enhanced by co-doping Gd3+ ions and Y3+ in Nd:CaF2 crystals. Preliminary laser experiments are carried out with 0.3%Nd,5%Gd:CaF2 and 0.3%Nd,5%Y:CaF2 crystals under laser diode pumping; true continuous wave laser operation is achieved with slope efficiencies of 42% and 39%, respectively, and the maximum output power reaches 1.188 W.

Pulsed and cw laser oscillations in LiF:F-2 color center crystal under laser diode pumping.

PubMed

Basiev, Tasoltan T; Vassiliev, Sergey V; Konjushkin, Vasily A; Gapontsev, Valentin P

2006-07-15

Continuous-wave laser oscillations in LiF:F-2 crystal optically pumped by a laser diode at 970 nm were demonstrated for what is believed to be the first time. The slope efficiency of 14% and conversion efficiency of 5.5% were achieved for 80 micros pump pulse duration and 5 Hz pulse repetition rate. An efficiency twice as low was measured at a 6.25 kHz pulse repetition rate (50% off-duty factor) and in cw mode of laser operation.

Performance of a 967 nm CW diode end-pumped Er:GSGG laser at 2.79 μm

NASA Astrophysics Data System (ADS)

Wu, Z. H.; Sun, D. L.; Wang, S. Z.; Luo, J. Q.; Li, X. L.; Huang, L.; Hu, A. L.; Tang, Y. Q.; Guo, Q.

2013-05-01

We demonstrated a 967 nm diode end-pumped Er:GSGG laser operated at 2.794 μm with spectral width 3.6 nm in the continuous wave (CW) mode. A maximum output power of 440 mW is obtained at an incident pumping power of 3.4 W, which corresponds to an optical-to-optical efficiency of 13% and slope efficiency of 13.2%. The results suggest that a short cavity and efficient cooling setup for the crystal help to improve laser performance.

Direct diode-pumped Kerr-lens mode-locked Ti:sapphire laser

PubMed Central

Durfee, Charles G.; Storz, Tristan; Garlick, Jonathan; Hill, Steven; Squier, Jeff A.; Kirchner, Matthew; Taft, Greg; Shea, Kevin; Kapteyn, Henry; Murnane, Margaret; Backus, Sterling

2012-01-01

We describe a Ti:sapphire laser pumped directly with a pair of 1.2W 445nm laser diodes. With over 30mW average power at 800 nm and a measured pulsewidth of 15fs, Kerr-lens-modelocked pulses are available with dramatically decreased pump cost. We propose a simple model to explain the observed highly stable Kerr-lens modelocking in spite of the fact that both the mode-locked and continuous-wave modes are smaller than the pump mode in the crystal. PMID:22714433

808nm high-power high-efficiency GaAsP/GaInP laser bars

NASA Astrophysics Data System (ADS)

Wang, Ye; Yang, Ye; Qin, Li; Wang, Chao; Yao, Di; Liu, Yun; Wang, Lijun

2008-11-01

808nm high power diode lasers, which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems, have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers, and they could lead to new applications where space, weight and electrical power are critical. High efficiency devices generate less waste heat, which means less strain on the cooling system and more tolerance to thermal conductivity variation, a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GaInP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200μs, 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars, we fabricate a 1x3 arrays, the maximum power is 64.3W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A, the slope efficiency is 3.37 W/A.

Fabrication and optimization of a whiskerless Schottky barrier diode for submillimeter wave applications

NASA Technical Reports Server (NTRS)

Bishop, W.; Mattauch, R. J.

1990-01-01

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

Diode-pumped continuous-wave and femtosecond Cr:LiCAF lasers with high average power in the near infrared, visible and near ultraviolet.

PubMed

Demirbas, Umit; Baali, Ilyes; Acar, Durmus Alp Emre; Leitenstorfer, Alfred

2015-04-06

We demonstrate continuous-wave (cw), cw frequency-doubled, cw mode-locked and Q-switched mode-locked operation of multimode diode-pumped Cr:LiCAF lasers with record average powers. Up to 2.54 W of cw output is obtained around 805 nm at an absorbed pump power of 5.5 W. Using intracavity frequency doubling with a BBO crystal, 0.9 W are generated around 402 nm, corresponding to an optical-to-optical conversion efficiency of 12%. With an intracavity birefringent tuning plate, the fundamental and frequency-doubled laser output is tuned continuously in a broad wavelength range from 745 nm to 885 nm and from 375 to 440 nm, respectively. A saturable Bragg reflector is used to initiate and sustain mode locking. In the cw mode-locked regime, the Cr:LiCAF laser produces 105-fs long pulses near 810 nm with an average power of 0.75 W. The repetition rate is 96.4 MHz, resulting in pulse energies of 7.7 nJ and peak powers of 65 kW. In Q-switched mode-locked operation, pulses with energies above 150 nJ are generated.

Diode-pumped quasi-three-level Nd:GdV O4-Nd:YAG sum-frequency laser at 464 nm

NASA Astrophysics Data System (ADS)

Lu, Jie

2014-04-01

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 464 nm. A 808 nm diode pumped a Nd:GdV O4 crystal emitting at 912 nm. A part of the pump power was then absorbed by the Nd:GdV O4 crystal. The remainder was used to pump a Nd:YAG crystal emitting at 946 nm. Intracavity sum-frequency mixing at 912 and 946 nm was then realized in a LiB3O5 (LBO) crystal to produce blue radiation. We obtained a cw output power of 1.52 W at 464 nm with a pump laser diode emitting 18.4 W at 808 nm.

Wavelength switchable high-power diode-side-pumped rod Tm:YAG Laser around 2µm.

PubMed

Wang, Caili; Du, Shifeng; Niu, Yanxiong; Wang, Zhichao; Zhang, Chao; Bian, Qi; Guo, Chuan; Xu, Jialin; Bo, Yong; Peng, Qinjun; Cui, Dafu; Zhang, Jingyuan; Lei, Wenqiang; Xu, Zuyan

2013-03-25

We report a high-power diode-side-pumped rod Tm:YAG laser operated at either 2.07 or 2.02 µm depending on the transmission of pumped output coupler. The laser yields 115W of continuous-wave output power at 2.07 µm with 5% output coupling, which is the highest output power for all solid-state 2.07 μm cw rod Tm:YAG laser reported so far. With an output coupler of 10% transmission, the center wavelength of the laser is switched to 2.02 μm with an output power of 77.1 W. This is the first observation of high-power wavelength switchable diode-side-pumped rod Tm:YAG laser around 2 µm.

High-energy directly diode-pumped Q-switched 1617 nm Er:YAG laser at room temperature.

PubMed

Wang, Mingjian; Zhu, Liang; Chen, Weibiao; Fan, Dianyuan

2012-09-01

We describe high-energy Erbium-doped yttrium aluminum garnet (Er:YAG) lasers operating at 1617 nm, resonantly pumped using 1532 nm fiber-coupled laser diodes. A maximum continuous wave output power of 4.3 W at 1617 nm was achieved with an output coupler of 20% transmission under incident pump power of 29.7 W, resulting in an optical conversion of 14% with respect to the incident pump power. In Q-switched operation, the pulse energy of 11.8 mJ at 100 Hz pulse repetition frequency and 81 ns pulse duration was obtained. This energy is the highest pulse energy reported for a directly diode-pumped Q-switched Er:YAG laser operating at 1617 nm.

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.

2015-02-16

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injectedmore » photons.« less

Diode-pumped femtosecond mode-locked Nd, Y-codoped CaF2 laser

NASA Astrophysics Data System (ADS)

Zhu, Jiangfeng; Zhang, Lijuan; Gao, Ziye; Wang, Junli; Wang, Zhaohua; Su, Liangbi; Zheng, Lihe; Wang, Jingya; Xu, Jun; Wei, Zhiyi

2015-03-01

A passively mode-locked femtosecond laser based on an Nd, Y-codoped CaF2 disordered crystal was demonstrated. The Y3+-codoping in Nd : CaF2 markedly suppressed the quenching effect and improved the fluorescence quantum efficiency and emission spectra. With a fiber-coupled laser diode as the pump source, the continuous wave tuning range covering from 1042 to 1076 nm was realized, while the mode-locked operation generated 264 fs pulses with an average output power of 180 mW at a repetition rate of 85 MHz. The experimental results show that the Nd, Y-codoped CaF2 disordered crystal has potential in a new generation diode-pumped high repetition rate chirped pulse amplifier.

Continuous-wave and actively Q-switched resonantly dual-end-pumped Er : YAG ceramic laser emitting at 1.6 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dai, T Y; Deng, Yu; Ju, Y-L

2015-12-31

We demonstrate a continuous-wave (cw) and actively Q-switched Er : YAG ceramic laser resonantly dual-end-pumped by a 1532 nm fibre-coupled laser diode. A maximum cw output power of 1.48 W at 1645.3 nm is obtained at an absorbed pump power of 12.72 W, corresponding to a slope efficiency of 19.2%. In the Q-switched regime the maximum pulse energy of 0.84 mJ is reached at a pulse repetition rate of 100 Hz, pulse duration of 48.03 ns and absorbed pump power of 10.51 W. (lasers)

Fast continuous tuning of terahertz quantum-cascade lasers by rear-facet illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hempel, Martin, E-mail: hempel@pdi-berlin.de; Röben, Benjamin; Schrottke, Lutz

2016-05-09

GaAs-based terahertz quantum-cascade lasers (QCLs) are continuously tuned in their emission frequency by illuminating the rear facet with a near-infrared, high-power diode laser. For QCLs emitting around 3.1 THz, the maximum tuning range amounts to 2.8 GHz for continuous-wave operation at a heat sink temperature of 55 K, while in pulsed mode 9.1 and 8.0 GHz are achieved at 35 and 55 K, respectively.

Offset-frequency locking of extended-cavity diode lasers for precision spectroscopy of water at 1.38 μm.

PubMed

Gianfrani, Livio; Castrillo, Antonio; Fasci, Eugenio; Galzerano, Gianluca; Casa, Giovanni; Laporta, Paolo

2010-10-11

We describe a continuous-wave diode laser spectrometer for water-vapour precision spectroscopy at 1.38 μm. The spectrometer is based upon the use of a simple scheme for offset-frequency locking of a pair of extended-cavity diode lasers that allows to achieve unprecedented accuracy and reproducibility levels in measuring molecular absorption. When locked to the master laser with an offset frequency of 1.5 GHz, the slave laser exhibits residual frequency fluctuations of 1 kHz over a time interval of 25 minutes, for a 1-s integration time. The slave laser could be continuously tuned up to 3 GHz, the scan showing relative deviations from linearity below the 10{-6} level. Simultaneously, a capture range of the order of 1 GHz was obtained. Quantitative spectroscopy was also demonstrated by accurately determining relevant spectroscopic parameters for the 22,1→22,0line of the H2(18)O v1+v3 band at 1384.6008 nm.

OH SENSOR BASED ON ULTRA-VIOLET, CONTINUOUS-WAVE ABSORPTION SPECTROSCOPY UTILIZING A FREQUENCY-QUADRUPLED, FIBER-AMPLIFIED EXTERNAL CAVITY DIODE LASER. (R828180)

EPA Science Inventory

The perspectives, information and conclusions conveyed in research project abstracts, progress reports, final reports, journal abstracts and journal publications convey the viewpoints of the principal investigator and may not represent the views and policies of ORD and EPA. Concl...

Experimental investigation of a diode-pumped powerful continuous-wave dual-wavelength Nd:YAG laser at 946 and 938.6 nm

NASA Astrophysics Data System (ADS)

Chen, F.; Yu, X.; Yan, R. P.; Li, X. D.; Li, D. J.; Yang, G. L.; Xie, J. J.; Guo, J.

2013-05-01

In this paper, a diode-pumped high-power continuous-wave (cw) dual-wavelength Nd:YAG laser at 946 and 938.6 nm is reported. By using an end-pumped structure, comparative experiments indicate that a 5 mm-length Nd:YAG crystal with a Nd3+-doping concentration of 0.3 at.% is favorable for high-power laser operation, and the optimal transmissivity of the output coupler is 9%. As a result, a maximum output power of 17.2 W for a dual-wavelength laser at 946 and 938.6 nm is obtained at an incident pump power of 75.9 W, corresponding to a slope efficiency of 26.5%. To the best of our knowledge, this is the highest output power of a quasi-three-level dual-wavelength laser using a conventional Nd:YAG crystal achieved to date. By using a traveling knife-edge method, the beam quality factor and far-field divergence angle at 17 W power level are estimated to be 4.0 and 6.13 mrad, respectively.

Continuous-wave optical stimulation of the rat prostate nerves using an all-single-mode 1455 nm diode laser and fiber system

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2011-03-01

Optical nerve stimulation (ONS) has recently been reported as a potential alternative to electrical nerve stimulation. Continuous-wave (CW) laser stimulation of the prostate cavernous nerves (CN) in a rat model, in vivo, has also been demonstrated in our previous studies. The objective of this study is to present a new all-single-mode-fiber configuration for ONS with the laser operating in CW mode for potential diagnostic applications. An infrared pigtailed single-mode diode laser (λ = 1455 nm) was used in this study for noncontact ONS. This new all-fiber approach introduces several advantages including: (1) a less expensive and more compact ONS system, (2) elimination of alignment of optical components, and (3) an improved spatial beam profile. Successful optical stimulation of the rat CN using this new design was observed after the CN reached a threshold temperature of ~ 41 °C with response times as short as 3 s. Upon further study, this configuration may be useful for identification and preservation of the cavernous nerves during prostate cancer surgery.

Effects of laser-aided circumferential supracrestal fiberotomy on root surfaces.

PubMed

Lee, Ji-Won; Park, Ki-Ho; Chung, Jong-Hyuk; Kim, Su-Jung

2011-11-01

To evaluate and compare the effects of circumferential supracrestal fiberotomy in vivo (using diode, CO(2), and Er∶YAG lasers) on the morphology and chemical composition of the root surface. Forty healthy premolar teeth, intended for extraction for orthodontic reasons, were used in this study. Root surfaces were treated using different laser methods, as follows: (1) control; (2) Er∶YAG laser (2.94 µm, 100 mJ, 10 Hz); (3) diode laser (808 nm, 1.2 W, continuous wave); and (4) CO(2) laser (10.6 µm, 3 W, continuous wave). Subsequently, the teeth were removed and subjected to scanning electron microscopic (SEM) examination and energy dispersive x-ray (EDX) spectrometric analysis. SEM analysis indicated that no thermal changes, including melting or carbonization, were observed following the lasing procedures. EDX analysis showed that the laser procedures resulted in similar mineral contents (weight % of calcium and phosphate) as compared to those in the control group. Based on these findings, we concluded that laser-aided procedures, when used at appropriate laser settings, preserve the original morphology and chemical composition of cementum.

Diode-pumped continuous-wave eye-safe Nd:YAG laser at 1415 nm.

PubMed

Lee, Hee Chul; Byeon, Sung Ug; Lukashev, Alexei

2012-04-01

We describe the output performance of the 1415 nm emission in Nd:YAG in a plane-concave cavity under traditional pumping into the 4F5/2 level (808 nm) and direct in-band pumping into the 4F3/2 level (885 nm). An end-pumped Nd:YAG laser yielded maximum cw output power of 6.3 W and 4.2 W at 885 nm and 808 nm laser diode (LD) pumping, respectively. To the best of our knowledge, this is the highest output power of a LD-pumped 1415 nm laser.

Diode pumped Yb:CN laser at 1082 nm and intracavity doubling to the green spectral range

NASA Astrophysics Data System (ADS)

Liu, B.; Li, Y. L.; Jiang, H. L.

2011-08-01

A diode pumped Yb:CaNb2O6 (Yb:CN) laser at 1082 nm with a maximum output of 1.35 W at 13.3 W pump power has been demonstrated. The slope efficiency was 12.4%. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a maximum green power of 374 mW by using a LiB3O5 (LBO) nonlinear crystal. To the best of our knowledge, this is the first report on continuous wave (CW) green generation by intracavity frequency doubling Yb:CN laser.

Near-infrared diode laser based spectroscopic detection of ammonia: a comparative study of photoacoustic and direct optical absorption methods

NASA Technical Reports Server (NTRS)

Bozoki, Zoltan; Mohacsi, Arpad; Szabo, Gabor; Bor, Zsolt; Erdelyi, Miklos; Chen, Weidong; Tittel, Frank K.

2002-01-01

A photoacoustic spectroscopic (PAS) and a direct optical absorption spectroscopic (OAS) gas sensor, both using continuous-wave room-temperature diode lasers operating at 1531.8 nm, were compared on the basis of ammonia detection. Excellent linear correlation between the detector signals of the two systems was found. Although the physical properties and the mode of operation of both sensors were significantly different, their performances were found to be remarkably similar, with a sub-ppm level minimum detectable concentration of ammonia and a fast response time in the range of a few minutes.

Versatile monolithic 2-micron laser systems

NASA Astrophysics Data System (ADS)

Wysmolek, M.; Steinke, M.; Neumann, J.; Kracht, D.

2018-02-01

To answer a growing demand in development of high power pulsed and continuous wave sources at 2 micron spectral range we have participated in several projects, which resulted in a delivery of versatile monolithic sources providing picosecond, nanosecond and CW laser signal. As an example of pulsed sources we developed all-fiber monolithic devices based on a directly modulated laser diode and gain-switched laser diode to generate nanosecond and picosecond pulses, respectively, which are amplified in the same fiber amplifier chain up to 50 µJ with 96 ps and more than 1 mJ with pulses longer than 35 ns.

GaSbBi/GaSb quantum well laser diodes

NASA Astrophysics Data System (ADS)

Delorme, O.; Cerutti, L.; Luna, E.; Narcy, G.; Trampert, A.; Tournié, E.; Rodriguez, J.-B.

2017-05-01

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates. Excellent crystal quality and room-temperature photoluminescence are achieved in both cases. We demonstrate laser operation from laser diodes with an active zone composed of three GaSb0.885Bi0.115/GaSb quantum wells. These devices exhibit continuous-wave lasing at 2.5 μm at 80 K, and lasing under pulsed operation at room-temperature near 2.7 μm.

Ultrahigh-speed phaselocked-loop type clock recovery circuit using a travelling-wave laser diode amplifier as a 50 GHz phase detector

NASA Astrophysics Data System (ADS)

Kawanishi, S.; Takara, H.; Saruwatari, M.; Kitoh, T.

1993-09-01

Successful operation of a phase-locked loop is demonstrated using a traveling-wave laser-diode amplifier as a 50 GHz phase detector. Optical gain modulation in the laser diode amplifier and an all-optical clock multiplication technique using a silica-based guided-wave optical circuit are used to achieve the extremely high-speed operation. Also discussed is the possibility of more than 100 GHz operation.

High efficiency, linearly polarized, directly diode-pumped Er:YAG laser at 1617  nm.

PubMed

Yu, Zhenzhen; Wang, Mingjian; Hou, Xia; Chen, Weibiao

2014-12-01

An efficient, directly diode-pumped Er:YAG laser at 1617 nm was demonstrated. A folding mirror with high reflectivity for the s-polarized light at the laser wavelength was used to achieve a linearly polarized laser. A maximum continuous-wave output power of 7.73 W was yielded under incident pump power of 50.57 W, and the optical conversion efficiency with respect to incident pump power was ∼15.28%, which was the highest optical conversion efficiency with directly diode-pumped Er:YAG lasers up to now; in Q-switched operation, the maximum pulse energy of 7.82 mJ was generated with pulse duration of about 80 ns at a pulse repetition frequency of 500 Hz.

Efficient yellow-green light generation at 561 nm by frequency-doubling of a QD-FBG laser diode in a PPLN waveguide.

PubMed

Fedorova, Ksenia A; Sokolovskii, Grigorii S; Khomylev, Maksim; Livshits, Daniil A; Rafailov, Edik U

2014-12-01

A compact high-power yellow-green continuous wave (CW) laser source based on second-harmonic generation (SHG) in a 5% MgO doped periodically poled congruent lithium niobate (PPLN) waveguide crystal pumped by a quantum-dot fiber Bragg grating (QD-FBG) laser diode is demonstrated. A frequency-doubled power of 90.11 mW at the wavelength of 560.68 nm with a conversion efficiency of 52.4% is reported. To the best of our knowledge, this represents the highest output power and conversion efficiency achieved to date in this spectral region from a diode-pumped PPLN waveguide crystal, which could prove extremely valuable for the deployment of such a source in a wide range of biomedical applications.

Intracavity frequency doubling of a continuous-wave, diode-laser-pumped neodymium lanthanum scandium borate laser.

PubMed

Meyn, J P; Huber, G

1994-09-15

Neodymium-doped lanthanum scandium borate [Nd:LaSc(3)(BO(3))(4)] is a new material for efficient and compact diode-pumped solid-state lasers. A simple plane-plane 3-mm-long resonator is formed by a coated Nd(10%):LaSc(3)(BO(3))(4) crystal and a coated potassium titanyl phosphate (KTP) crystal. The second-harmonic output power at 531 nm is 522 mW at 2.05-W incident pump power of the diode laser. The corresponding optical efficiency is 25%, and the conversion efficiency from the fundamental to the second harmonic is 55%. The wellknown chaotic power fluctuations of intracavity frequency-doubled lasers (green problem) are avoided by use of a short KTP crystal, between 0.5 and 2 mm in length.

Efficient laser-diode end-pumped Nd:GGG lasers at 1054 and 1067 nm.

PubMed

Xu, Bin; Xu, Huiying; Cai, Zhiping; Camy, P; Doualan, J L; Moncorgé, R

2014-10-10

Efficient and compact laser-diode end-pumped Nd:GGG simultaneous multiwavelength continuous-wave lasers at ∼1059, ∼1060 and ∼1062  nm were first demonstrated in a free-running 30 mm plano-concave laser cavity. The maximum output power was up to 3.92 W with a slope efficiency of about 53.6% with respect to the absorbed pump power. By inserting a 0.1 mm optical glass plate acting as a Fabry-Pérot etalon, a single-wavelength laser at ∼1067  nm with a maximum output power of 1.95 W and a slope efficiency of 28.5% can be obtained. Multiwavelength lasers, including those at ∼1054 or ∼1067  nm, were also achievable by suitably tilting the glass etalon. These simultaneous multiwavelength lasers provide a potential source for terahertz wave generation.

Millimeter-wave detection using resonant tunnelling diodes

NASA Technical Reports Server (NTRS)

Mehdi, I.; Kidner, C.; East, J. R.; Haddad, G. I.

1990-01-01

A lattice-matched InGaAs/InAlAs resonant tunnelling diode is studied as a video detector in the millimeter-wave range. Tangential signal sensitivity and video resistance measurements are made as a function of bias and frequency. A tangential signal sensitivity of -37 dBm (1 MHz amplifier bandwidth) with a corresponding video resistance of 350 ohms at 40 GHz has been measured. These results appear to be the first millimeter-wave tangential signal sensitivity and video resistance results for a resonant tunnelling diode.

Over 10-watt pico-second diffraction-limited output from a Nd:YVO4 slab amplifier with a phase conjugate mirror.

PubMed

Ojima, Yasukuni; Nawata, Kouji; Omatsu, Takashige

2005-10-31

We have produced a high beam quality pico-second laser based on a continuous-wave diode pumped Nd:YVO4 slab amplifier with a photorefractive phase conjugate mirror. 12.8W diffraction-limited output with a pulse width of 8.7ps was obtained.

Wave-packet rectification in nonlinear electronic systems: A tunable Aharonov-Bohm diode

PubMed Central

Li, Yunyun; Zhou, Jun; Marchesoni, Fabio; Li, Baowen

2014-01-01

Rectification of electron wave-packets propagating along a quasi-one dimensional chain is commonly achieved via the simultaneous action of nonlinearity and longitudinal asymmetry, both confined to a limited portion of the chain termed wave diode. However, it is conceivable that, in the presence of an external magnetic field, spatial asymmetry perpendicular to the direction of propagation suffices to ensure rectification. This is the case of a nonlinear ring-shaped lattice with different upper and lower halves (diode), which is attached to two elastic chains (leads). The resulting device is mirror symmetric with respect to the ring vertical axis, but mirror asymmetric with respect to the chain direction. Wave propagation along the two diode paths can be modeled for simplicity by a discrete Schrödinger equation with cubic nonlinearities. Numerical simulations demonstrate that, thanks to the Aharonov-Bohm effect, such a diode can be operated by tuning the magnetic flux across the ring. PMID:24691462

Continuous-wave and acousto-optically Q-switched 1066 nm laser performance of a novel Nd:GdTaO4 crystal

NASA Astrophysics Data System (ADS)

Ma, Yufei; He, Ying; Peng, Zhenfang; Sun, Haiyue; Peng, Fang; Yan, Renpeng; Li, Xudong; Yu, Xin; Zhang, Qingli; Ding, Shoujun

2018-05-01

A diode-pumped acousto-optically (AO) Q-switched 1066 nm laser with a novel Nd:GdTaO4 crystal was demonstrated for the first time to the best of our knowledge. The optimization selection of output coupler was carried out in the continuous-wave (CW) operation. After that the pulsed Nd:GdTaO4 laser performances using different modulation repetition rates of 10 kHz and 20 kHz were investigated. At an absorbed pump power of 10 W and repetition rates of 10 kHz, the obtained minimum pulse width was 28 ns and the maximum peak power was 5.4 kW.

Diode-pumped continuous wave tunable and graphene Q-switched Tm:LSO lasers.

PubMed

Feng, T L; Zhao, S Z; Yang, K J; Li, G Q; Li, D C; Zhao, J; Qiao, W C; Hou, J; Yang, Y; He, J L; Zheng, L H; Wang, Q G; Xu, X D; Su, L B; Xu, J

2013-10-21

We have investigated the lasing characteristics of Tm:LSO crystal in three operation regimes: continuous wave (CW), wavelength tunable and passive Q-switching based on graphene. In CW regime, a maximum output power of 0.65 W at 2054.9 nm with a slope efficiency of 21% was achieved. With a quartz plate, a broad wavelength tunable range of 145 nm was obtained, corresponding to a FWHM of 100 nm. By using a graphene saturable absorber mirror, the passively Q-switched Tm:LSO laser produced pulses with duration of 7.8 μs at 2030.8 nm under a repetition rate of 7.6 kHz, corresponding to pulse energy of 14.0 μJ.

Stable continuous-wave single-frequency Nd:YAG blue laser at 473 nm considering the influence of the energy-transfer upconversion.

PubMed

Wang, Yaoting; Liu, Jianli; Liu, Qin; Li, Yuanji; Zhang, Kuanshou

2010-06-07

We report a continuous-wave (cw) single frequency Nd:YAG blue laser at 473 nm end-pumped by a laser diode. A ring laser resonator was designed, the frequency doubling efficiency and the length of nonlinear crystal were optimized based on the investigation of the influence of the frequency doubling efficiency on the thermal lensing effect induced by energy-transfer upconversion. By intracavity frequency doubling with PPKTP crystal, an output power of 1 W all-solid-state cw blue laser of single-frequency operation was achieved. The stability of the blue output power was better than +/- 1.8% in the given four hours.

Efficient Q-switched Tm:YAG ceramic slab laser.

PubMed

Zhang, Shuaiyi; Wang, Mingjian; Xu, Lin; Wang, Yan; Tang, Yulong; Cheng, Xiaojin; Chen, Weibiao; Xu, Jianqiu; Jiang, Benxue; Pan, Yubai

2011-01-17

Characteristics of Tm:YAG ceramic for high efficient 2-μm lasers are analyzed. Efficient diode end-pumped continuous-wave and Q-switched Tm:YAG ceramic lasers are demonstrated. At the absorbed pump power of 53.2W, the maximum continuous wave (cw) output power of 17.2 W around 2016 nm was obtained with the output transmission of 5%. The optical conversion efficiency is 32.3%, corresponding to a slope efficiency of 36.5%. For Q-switched operation, the shortest width of 69 ns was achieved with the pulse repetition frequency of 500 Hz and single pulse energy of 20.4 mJ, which indicates excellent energy storage capability of the Tm:YAG ceramic.

Comparative evaluation of antimicrobial effects of Er:YAG, diode, and CO₂ lasers on titanium discs: an experimental study.

PubMed

Tosun, Emre; Tasar, Ferda; Strauss, Robert; Kıvanc, Dolunay Gulmez; Ungor, Cem

2012-05-01

This study examined carbon dioxide (CO(2); 10,600 nm), diode (808 nm), and erbium (Er):yttrium-aluminum-garnet (YAG; 2,940 nm) laser applications on Staphylococcus aureus contaminated, sandblasted, large-grit, acid-etched surface titanium discs and performed a comparative evaluation of the obtained bactericidal effects and the applicability of these effects in clinical practice. This study was carried out in 5 main groups: Er:YAG laser in very short pulse (VSP) emission mode, Er:YAG laser in short pulse (SP) emission mode, diode laser with a 320-nm fiber optic diode laser with an R24-B handpiece, and CO(2) laser. After laser irradiation, dilutions were spread on sheep blood agar plates and, after an incubation period of 24 hours, colony-forming units were counted and compared with the control group, and the bactericidal activity was assessed in relation to the colony counts. The CO(2) laser eliminated 100% of the bacteria at 6 W, 20 Hz, and a 10-ms exposure time/pulse with a 10-second application period (0.8-mm spot size). The continuous-wave diode laser eliminated 97% of the bacteria at 1 W using a 10-second application with a 320-μm optic fiber, 100% of the bacteria were killed with a 1-W, 10-second continuous-wave application with an R14-B handpiece. The Er:YAG laser eliminated 100% of the bacteria at 90 mJ and 10 Hz using a 10-second application in a superpulse mode (300-ms exposure time/pulse). The Er:YAG laser also eliminated 99% to 100% of the bacteria in VSP mode at 90 mJ and 10 Hz with a 10-second application. The results of this study show that a complete, or near complete, elimination of surface bacteria on titanium surfaces can be accomplished in vitro using a CO(2), diode, or Er:YAG laser as long as appropriate parameters are used. Copyright © 2012 American Association of Oral and Maxillofacial Surgeons. All rights reserved.

Spectroscopic, luminescent and laser properties of nanostructured CaF2:Tm materials

NASA Astrophysics Data System (ADS)

Lyapin, A. A.; Fedorov, P. P.; Garibin, E. A.; Malov, A. V.; Osiko, V. V.; Ryabochkina, P. A.; Ushakov, S. N.

2013-08-01

The laser quality transparent СаF2:Tm fluoride ceramics has been prepared by hot forming. Comparative study of absorption and emission spectra of СаF2:Tm (4 mol.% TmF3) ceramic and single crystal samples demonstrated that these materials possess almost identical spectroscopic properties. Laser oscillations of СаF2:Tm ceramics were obtained at 1898 nm under diode pumping, with the slope efficiency of 5.5%. Also, the continuous-wave (CW) laser have been obtained for СаF2:Tm single crystal at 1890 nm pumped by a diode laser was demonstrated.

Diode pumped passively Q-switched Nd:LuAG laser at 1442.6 nm

NASA Astrophysics Data System (ADS)

Guan, Chen; Liu, Zhaojun; Cong, Zhenhua; Liu, Yang; Xu, Xiaodong; Xu, Jun; Huang, Qingjie; Rao, Han; Chen, Xia; Zhang, Yanmin; Wu, Qianwen; Bai, Fen; Zhang, Sasa

2017-02-01

A diode-end-pumped passively Q-switched Nd:LuAG laser at 1442.6 nm was demonstrated with a V3+:YAG crystal as the saturable absorber. Under continuous-wave (CW) operation, the maximum output power of 1.83 W was obtained with an absorbed pumping power of 11.1 W. The corresponding optical-to-optical conversion efficiency was 16.5%. Under Q-switched operation, the maximum average output power of 424 mW was obtained at the same pumping power. The pulse duration and pulse repetition rate were 72 ns and 17.4 kHz, respectively.

2.07-micron CW diode-laser-pumped Tm,Ho:YLiF4 room-temperature

NASA Technical Reports Server (NTRS)

Hemmati, Hamid

1989-01-01

Continuous-wave action is obtained at 2.07 microns from a 2-mm-long Tm-sensitized Ho:YLiF4 crystal at room temperature when longitudinally pumped by a pair of diode-laser arrays. Laser output power at 300 K is 26 mW, with a 30-percent slope efficiency and a lasing threshold of 108 mW. A maximum output power of 187 mW is obtained from a 4-mm-long crystal at 77 K, with a 67 percent slope efficiency. A preliminary demonstration of cavity Q switching produced 165 microJ of pulse energy at a repetition rate of 100 Hz.

Efficient Ho:LuLiF4 laser diode-pumped at 1.15 μm.

PubMed

Wang, Sheng-Li; Huang, Chong-Yuan; Zhao, Cheng-Chun; Li, Hong-Qiang; Tang, Yu-Long; Yang, Nan; Zhang, Shuai-Yi; Hang, Yin; Xu, Jian-Qiu

2013-07-15

We report the first laser operation based on Ho(3+)-doped LuLiF(4) single crystal, which is directly pumped with 1.15-μm laser diode (LD). Based on the numerical model, it is found that the "two-for-one" effect induced by the cross-relaxation plays an important role for the laser efficiency. The maximum continuous wave (CW) output power of 1.4 W is produced with a beam propagation factor of M(2) ~2 at the lasing wavelength of 2.066 μm. The slope efficiency of 29% with respect to absorbed power is obtained.

Two-step narrow ridge cascade diode lasers emitting near $$2~\\mu$$ m

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-01-02

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

Diode-pumped Nd:GAGG-LBO laser at 531 nm

NASA Astrophysics Data System (ADS)

Zou, J.; Chu, H.; Wang, L. R.

2012-03-01

We report a green laser at 531 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1062 nm Nd:GAGG laser under in-band diode pumping at 808 nm. A LiB3O5 (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.5 W, as high as 933 mW of cw output power at 531 nm is achieved. The fluctuation of the green output power was better than 3.5% in the given 4 h.

Simultaneous multi-laser, multi-species trace-level sensing of gas mixtures by rapidly swept continuous-wave cavity-ringdown spectroscopy.

PubMed

He, Yabai; Kan, Ruifeng; Englich, Florian V; Liu, Wenqing; Orr, Brian J

2010-09-13

The greenhouse-gas molecules CO(2), CH(4), and H(2)O are detected in air within a few ms by a novel cavity-ringdown laser-absorption spectroscopy technique using a rapidly swept optical cavity and multi-wavelength coherent radiation from a set of pre-tuned near-infrared diode lasers. The performance of various types of tunable diode laser, on which this technique depends, is evaluated. Our instrument is both sensitive and compact, as needed for reliable environmental monitoring with high absolute accuracy to detect trace concentrations of greenhouse gases in outdoor air.

Theoretical analyses of an injection-locked diode-pumped rubidium vapor laser.

PubMed

Cai, He; Gao, Chunqing; Liu, Xiaoxu; Wang, Shunyan; Yu, Hang; Rong, Kepeng; An, Guofei; Han, Juhong; Zhang, Wei; Wang, Hongyuan; Wang, You

2018-04-02

Diode-pumped alkali lasers (DPALs) have drawn much attention since they were proposed in 2001. The narrow-linewidth DPAL can be potentially applied in the fields of coherent communication, laser radar, and atomic spectroscopy. In this study, we propose a novel protocol to narrow the width of one kind of DPAL, diode-pumped rubidium vapor laser (DPRVL), by use of an injection locking technique. A kinetic model is first set up for an injection-locked DPRVL with the end-pumped configuration. The laser tunable duration is also analyzed for a continuous wave (CW) injection-locked DPRVL system. Then, the influences of the pump power, power of a master laser, and reflectance of an output coupler on the output performance are theoretically analyzed. The study should be useful for design of a narrow-linewidth DPAL with the relatively high output.

High-slope-efficiency 2.06 μm Ho: YLF laser in-band pumped by a fiber-coupled broadband diode.

PubMed

Ji, Encai; Liu, Qiang; Nie, Mingming; Cao, Xuezhe; Fu, Xing; Gong, Mali

2016-03-15

We first demonstrate the laser performance of a compact 2.06 μm Ho: YLF laser resonantly pumped by a broadband fiber-coupled diode. In continuous-wave (CW) operation, maximum output power of 1.63 W, corresponding to a slope efficiency of 89.2%, was obtained with a near diffraction-limited beam quality. In actively Q-switched operation, maximum pulse energy of 1.1 mJ was achieved at the repetition frequency of 100 Hz. The minimum pulse duration was 43 ns. The performance in both the CW and Q-switched regimes indicates that the current fiber-coupled diode in-band pumped Ho: YLF laser has great potential in certain conditions that require several watts of output power or several millijoules of short pulse energy.

All-solid-state continuous-wave frequency doubling Nd:LuVO4/LBO laser with 2.17 W output power at 543 nm

NASA Astrophysics Data System (ADS)

Li, B.; Zhao, L.; Zhang, Y. B.; Zheng, Q.; Zhao, Y.; Yao, Y.

2013-03-01

Efficient and compact green-yellow laser output at 543 nm is generated by intracavity frequency doubling of a CW diode-pumped Nd:LuVO4 laser at 1086 nm under the condition of suppressing the higher gain transition near 1064 nm. With 16 W of diode pump power and the frequency-doubling crystal LBO, as high as 2.17 W of CW output power at 543 nm is achieved, corresponding to an optical-to-optical conversion efficiency of 13.6% and the output power stability over 8 hours is better than 2.86%. To the best of our knowledge, this is the highest watt-level laser at 543 nm generated by intracavity frequency doubling of a diode pumped Nd:LuVO4 laser at 1086 nm.

Venous Lake of the Lips Treated Using Photocoagulation with High-Intensity Diode Laser

PubMed Central

Galletta, Vivian C.; de Paula Eduardo, Carlos; Migliari, Dante A.

2010-01-01

Abstract Objective: To evaluate the effectiveness of photocoagulation with high-intensity diode laser in the treatment of venous lake (VL) lesions. Background Data: VL is a common vascular lesion characterized by elevated, usually dome-shaped papules, ranging in color from dark blue to dark purple, seen more frequently in elderly patients. They often occur as single lesions on the ears, face, lips, or neck. Once formed, lesions persist throughout life. Although these lesions are usually asymptomatic, they can bleed if injured. Methods: Seventeen patients (7 men and 10 women) with VL on the lip were treated using a noncontact diode laser (wavelength 808 nm, power output 2–3 W in continuous wave). Results: After only one irradiation exposure, all lesions were successfully treated. Healing was completed in approximately 2 to 3 weeks, and none of the patients experienced complications. Postoperative discomfort and scarring were not present or were minimal. Conclusion: Photocoagulation with high-intensity diode laser is an effective, bloodless procedure for the treatment of VL. PMID:19811083

Custom chipset and compact module design for a 75-110 GHz laboratory signal source

NASA Astrophysics Data System (ADS)

Morgan, Matthew A.; Boyd, Tod A.; Castro, Jason J.

2016-12-01

We report on the development and characterization of a compact, full-waveguide bandwidth (WR-10) signal source for general-purpose testing of mm-wave components. The monolithic microwave integrated circuit (MMIC) based multichip module is designed for compactness and ease-of-use, especially in size-constrained test sets such as a wafer probe station. It takes as input a cm-wave continuous-wave (CW) reference and provides a factor of three frequency multiplication as well as amplification, output power adjustment, and in situ output power monitoring. It utilizes a number of custom MMIC chips such as a Schottky-diode limiter and a broadband mm-wave detector, both designed explicitly for this module, as well as custom millimeter-wave multipliers and amplifiers reported in previous papers.

2.05-μm Holmium-doped all-fiber continuous-wave laser at in-core diode-pumping at 1.125 μm

NASA Astrophysics Data System (ADS)

Kir'yanov, Alexander V.; Barmenkov, Yuri O.

2017-08-01

We report a Holmium-doped all-fiber laser oscillating in continuous-wave at 2.05 μm, at in-core pumping by a 1.125-μm laser diode. The active fibers employed are alumino-germano-silicate fibers doped with Ho3+ at concentrations of 1.2×1019 and 1.8×1019 cm-3. The laser is implemented in non-optimized Fabry-Perot cavity's geometry, composed of a couple of fiber Bragg gratings with reflectivity of 99 and 90%. When using the lower doped Holmium-doped fiber of proper length (1.4 m), low threshold ( 370 mW) and moderate slope efficiency ( 13%) of 2.05-μm lasing were obtained. High-brightness (laser line's width is 60 pm) and good noise-to-signal ratio (<0.006) are the laser's attractivities. In case of the heavier doped fiber of optimal length (1.2 m), the laser output (threshold of 430 mW, slope efficiency of 9%, output power of 9 mW, laser line's width of 110 pm, noise-to-signal ratio of <0.009) is worse, with a probable reason being deteriorating Ho3+ concentration effects.

Continuous-wave THz vector imaging system utilizing two-tone signal generation and self-mixing detection.

PubMed

Song, Hajun; Hwang, Sejin; An, Hongsung; Song, Ho-Jin; Song, Jong-In

2017-08-21

We propose and demonstrate a continuous-wave vector THz imaging system utilizing a photonic generation of two-tone THz signals and self-mixing detection. The proposed system measures amplitude and phase information simultaneously without the local oscillator reference or phase rotation scheme that is required for heterodyne or homodyne detection. In addition, 2π phase ambiguity that occurs when the sample is thicker than the wavelength of THz radiation can be avoided. In this work, THz signal having two frequency components was generated with a uni-traveling-carrier photodiode and electro-optic modulator on the emitter side and detected with a Schottky barrier diode detector used as a self-mixer on the receiver side. The proposed THz vector imaging system exhibited a 50-dB signal to noise ratio and 0.012-rad phase fluctuation with 100-μs integration time at 325-GHz. With the system, we demonstrate two-dimensional THz phase contrast imaging. Considering the recent use of two-dimensional arrays of Schottky barrier diodes as a THz image sensor, the proposed system is greatly advantageous for realizing a real-time THz vector imaging system due to its simple receiver configuration.

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

PubMed

Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

2018-01-22

The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

Simultaneous three-wavelength continuous wave laser at 946 nm, 1319 nm and 1064 nm in Nd:YAG

NASA Astrophysics Data System (ADS)

Lü, Yanfei; Zhao, Lianshui; Zhai, Pei; Xia, Jing; Fu, Xihong; Li, Shutao

2013-01-01

A continuous-wave (cw) diode-end-pumped Nd:YAG laser that generates simultaneous laser at the wavelengths 946 nm, 1319 nm and 1064 nm is demonstrated. The optimum oscillation condition for the simultaneous three-wavelength operation has been derived. Using the separation of the three output couplers, we obtained the maximum output powers of 0.24 W at 946 nm, 1.07 W at 1319 nm and 1.88 W at 1064 nm at the absorbed pump power of 11.2 W. A total output power of 3.19 W for the three-wavelength was achieved at the absorbed pump power of 11.2 W with optical conversion efficiency of 28.5%.

Ceramic planar waveguide laser of non-aqueous tape casting fabricated YAG/Yb:YAG/YAG

PubMed Central

Wang, Chao; Li, Wenxue; Yang, Chao; Bai, Dongbi; Li, Jiang; Ge, Lin; Pan, Yubai; Zeng, Heping

2016-01-01

Ceramic YAG/Yb:YAG/YAG planar waveguide lasers were realized on continuous-wave and mode-locked operations. The straight waveguide, fabricated by non-aqueous tape casting and solid state reactive sintering, enabled highly efficient diode-pumped waveguide continuous-wave laser with the slope efficiency of 66% and average output power of more than 3 W. The influence of the waveguide structure on the wavelength tunability was also experimentally investiccgated with a dispersive prism. Passively mode-locked operation of the ceramic waveguide laser was achieved by using a semiconductor saturable absorber mirror (SESAM), output 2.95 ps pulses with maximum power of 385 mW at the central wavelength of 1030 nm. PMID:27535577

A continuous-wave and passively Q-switched Nd:LaGGG laser at 937 nm

NASA Astrophysics Data System (ADS)

Li, Z.-Y.; Ying, H.-Y.; Yang, H.; He, J.-L.

2013-10-01

A diode-end-pumped continuous-wave (CW) and passively Q-switched Nd:LaGGG (GGG: gadolinium gallium garnet) laser at about 937 nm was demonstrated for the first time. The maximum CW output power of 540 mW was obtained with the optical-optical conversion efficiency of 3.2% and the slope efficiency of 4.4%. A V3+:YAG (yttrium aluminum garnet) saturable absorber with the initial transmission of 97% was used for the passive Q-switching regime. The shortest pulse width was achieved as 500 ns with the pulse repetition rate of 96 kHz. The corresponding single-pulse energy and pulse peak power were determined as 1.56 μJ and 3.12 W, respectively.

Terahertz transmission properties of silicon wafers using continuous-wave terahertz spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Chihoon; Ahn, Jae Sung; Ji, Taeksoo; Eom, Joo Beom

2017-04-01

We present the spectral properties of Si wafers using continuous-wave terahertz (CW-THz) spectroscopy. By using a tunable laser source and a fixed distributed-feedback laser diode (DFB-LD), a stably tunable beat source for CW-THz spectroscopy system can be implemented. THz radiation is generated in the frequency range of 100 GHz-800 GHz by photomixing in a photoconductive antenna. We also measured CW-THz waveforms by changing the beat frequency and confirmed repeatability through repeated measurement. We calculated the peaks of the THz frequency by taking fast Fourier transforms (FFTs) of measured THz waveforms. The feasibility of CW-THz spectroscopy is demonstrated by the THz spectra of Si wafers with different resistivities, mobilities, and carrier concentrations. The results show that Si wafers with a lower resistivity absorb more THz waves. Thus, we expect our CW-THz system to have the advantage of being able to perform fast non-destructive analysis.

Spin-wave diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lan, Jin; Yu, Weichao; Wu, Ruqian

A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound statesmore » in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. As a result, these findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.« less

Spin-wave diode

DOE PAGES

Lan, Jin; Yu, Weichao; Wu, Ruqian; ...

2015-12-28

A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound statesmore » in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. As a result, these findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.« less

All-solid-state cw frequency-doubling Nd:YLiF4/LBO blue laser with 4.33 W output power at 454 nm under in-band diode pumping at 880 nm.

PubMed

Lü, Yanfei; Zhang, Xihe; Cheng, Weibo; Xia, Jing

2010-07-20

We generated efficient blue laser output at 454 nm by intracavity frequency doubling of a continuous-wave (cw) diode-pumped Nd:YLiF(4) (Nd:YLF) laser at 908 nm based on the (4)F(3/2)-(4)I(9/2) transition. With 32.8 W of incident pump power at 880 nm and the frequency-doubling crystal LiB(3)O(5), a level as high as 4.33 W of cw output power at 454 nm is achieved, corresponding to an optical conversion efficiency of 13.2% with respect to the incident pump power. To the best of our knowledge, this is the first blue laser at 454 nm generated by intracavity frequency doubling of a diode-pumped Nd:YLF.

High power cascade diode lasers emitting near 2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumpingmore » scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.« less

Coherent blue emission generated by Rb two-photon excitation using diode and femtosecond lasers

NASA Astrophysics Data System (ADS)

Lopez, Jesus P.; Moreno, Marco P.; de Miranda, Marcio H. G.; Vianna, Sandra S.

2017-04-01

The coherent blue light generated in rubidium vapor due to the combined action of an ultrashort pulse train and a continuous wave diode laser is investigated. Each step of the two-photon transition 5S-5P{}3/2-5D is excited by one of the lasers, and the induced coherence between the 5S and 6P{}3/2 states is responsible for generating the blue beam. Measurements of the excitation spectrum reveal the frequency comb structure and allow us to identify the resonant modes responsible for inducing the nonlinear process. Further, each resonant mode excites a different group of atoms, making the process selective in atomic velocity. The signal dependency on the atomic density is characterized by a sharp growth and a rapid saturation. We also show that for high intensity of the diode laser, the Stark shift at resonance causes the signal suppression observed at low atomic density.

Developing a compact multiple laser diode combiner with a single fiber stub output for handheld IoT devices

NASA Astrophysics Data System (ADS)

Lee, Minseok; June, Seunghyeok; Kim, Sehwan

2018-01-01

Many biomedical applications require an efficient combination and localization of multiple discrete light sources ( e.g., fluorescence and absorbance imaging). We present a compact 6 channel combiner that couples the output of independent solid-state light sources into a single 400-μm-diameter fiber stub for handheld Internet of Things (IoT) devices. We demonstrate average coupling efficiencies > 80% for each of the 6 laser diodes installed into the prototype. The design supports the use of continuous wave and intensity-modulated laser diodes. This fiber-stub-type beam combiner could be used to construct custom multi-wavelength sources for tissue oximeters, microscopes and molecular imaging technologies. In order to validate its suitability, we applied the developed fiber-stub-type beam combiner to a multi-wavelength light source for a handheld IoT device and demonstrated its feasibility for smart healthcare through a tumor-mimicking silicon phantom.

Highly stable self-pulsed operation of an Er:Lu2O3 ceramic laser at 2.7 µm

NASA Astrophysics Data System (ADS)

Wang, Li; Huang, Haitao; Shen, Deyuan; Zhang, Jian; Chen, Hao; Tang, Dingyuan

2017-04-01

We report on the highly stable self-pulsed operation of a 2.74 µm Er:Lu2O3 ceramic laser pumped by a wavelength locked narrow bandwidth 976 nm laser diode. The operating pulse repetition rate is continuously tunable from 126 kHz to 270 kHz depending on the pump power level. For 12.3 W of absorbed diode pump power, the Er:Lu2O3 ceramic laser generates 820 mW of average output power at a 270 kHz repetition rate and with a pulse duration of 183 ns. The corresponding pulse-to-pulse amplitude fluctuation is estimated to be less than 0.7%. In the continues-wave (CW) mode of operation, the laser yields over 1.3 W of output power with a slope efficiency of 11.9% with respect to the 976 nm pump power.

Highly efficient continuous-wave Nd:YAG ceramic lasers at 946 nm

NASA Astrophysics Data System (ADS)

Zhu, H. Y.; Xu, C. W.; Zhang, J.; Tang, D. Y.; Luo, D. W.; Duan, Y. M.

2013-07-01

Highly efficient CW operation of diode-end-pumped Nd:YAG ceramic lasers at 946 nm is experimentally demonstrated. When a 5 mm long in-house fabricated Nd:YAG ceramic was used as the gain medium, a maximum output power of 10.5 W was obtained under an incident pump power of 35 W, corresponding to an optical conversion efficiency of 30%, while, when a 3 mm long ceramic sample was used, a maximum output power of 8.7 W was generated with a slope efficiency of 65% with respect to the absorbed pump power. Both the optical conversion efficiency and slope efficiency are the highest results reported so far for the diode-pumped 946 nm lasers.

Cost-effective wavelength-tunable fiber laser using self-seeding Fabry-Perot laser diode.

PubMed

Yeh, Chien-Hung; Shih, Fu Y; Wang, Chia H; Chow, Chi W; Chi, Sien

2008-01-07

We propose and experimentally demonstrate a continuous wave (CW) tunable-wavelength fiber laser using self-seeding Fabry-Perot laser diode (FP-LD) without optical amplifier inside gain cavity. By employing a tunable bandpass filter (TBF) and a fiber reflected mirror (FRM) within a gain cavity, the fiber laser can lase a single-longitudinal wavelength due to the self-seeding operation. The proposed tunable wavelength laser has a good performance of the output power (> -15 dBm) and optical side-mode suppression ratio (> 40 dB) in the wavelength tuning range of 1533.75 to 1560.95 nm. In addition, the output stabilities of the fiber laser are also investigated.

Laser-diode pumped 40-W Yb:YAG ceramic laser.

PubMed

Hao, Qiang; Li, Wenxue; Pan, Haifeng; Zhang, Xiaoyi; Jiang, Benxue; Pan, Yubai; Zeng, Heping

2009-09-28

We demonstrated a high-power continuous-wave (CW) polycrystalline Yb:YAG ceramic laser pumped by fiber-pigtailed laser diode at 968 nm with 400 mum fiber core. The Yb:YAG ceramic laser performance was compared for different Yb(3+) ion concentrations in the ceramics by using a conventional end-pump laser cavity consisting of two flat mirrors with output couplers of different transmissions. A CW laser output of 40 W average power with M(2) factor of 5.8 was obtained with 5 mol% Yb concentration under 120 W incident pump power. This is to the best of our knowledge the highest output power in end-pumped bulk Yb:YAG ceramic laser.

MIT Lincoln Laboratory Facts 2015

DTIC Science & Technology

2015-01-01

this technology to industry for deployment in operational systems. Current efforts focus on radio - frequency (RF) military satellite communications ... frequency submarine communications demonstration ■■ Continuous-wave diode laser developed in InGaAsP/InP alloy ■■ Ground-based Electro-Optical Deep...Radar upgrade ■■ Miniaturized radio - frequency receiver ■■ Missile Alternative Range Target Instrument payloads ■■ Multifunction phased array radar

Time-to-space mapping of femtosecond pulses.

PubMed

Nuss, M C; Li, M; Chiu, T H; Weiner, A M; Partovi, A

1994-05-01

We report time-to-space mapping of femtosecond light pulses in a temporal holography setup. By reading out a temporal hologram of a short optical pulse with a continuous-wave diode laser, we accurately convert temporal pulse-shape information into a spatial pattern that can be viewed with a camera. We demonstrate real-time acquisition of electric-field autocorrelation and cross correlation of femtosecond pulses with this technique.

3.1 W narrowband blue external cavity diode laser

NASA Astrophysics Data System (ADS)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Inverse design of an ultra-compact broadband optical diode based on asymmetric spatial mode conversion

PubMed Central

Callewaert, Francois; Butun, Serkan; Li, Zhongyang; Aydin, Koray

2016-01-01

The objective-first inverse-design algorithm is used to design an ultra-compact optical diode. Based on silicon and air only, this optical diode relies on asymmetric spatial mode conversion between the left and right ports. The first even mode incident from the left port is transmitted to the right port after being converted into an odd mode. On the other hand, same mode incident from the right port is reflected back by the optical diode dielectric structure. The convergence and performance of the algorithm are studied, along with a transform method that converts continuous permittivity medium into a binary material design. The optimal device is studied with full-wave electromagnetic simulations to compare its behavior under right and left incidences, in 2D and 3D settings as well. A parametric study is designed to understand the impact of the design space size and initial conditions on the optimized devices performance. A broadband optical diode behavior is observed after optimization, with a large rejection ratio between the two transmission directions. This illustrates the potential of the objective-first inverse-design method to design ultra-compact broadband photonic devices. PMID:27586852

IMPATT Diodes Based on 〈111〉, 〈100〉, and 〈110〉 Oriented GaAs: A Comparative Study to Search the Best Orientation for Millimeter-Wave Atmospheric Windows

PubMed Central

Banerjee, Bhadrani; Tripathi, Anvita; Das, Adrija; Singh, Kumari Alka; Banerjee, J. P.

2015-01-01

The authors have carried out the large-signal (L-S) simulation of double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on 〈111〉, 〈100〉, and 〈110〉 oriented GaAs. A nonsinusoidal voltage excited (NSVE) L-S simulation technique is used to investigate both the static and L-S performance of the above-mentioned devices designed to operate at millimeter-wave (mm-wave) atmospheric window frequencies, such as 35, 94, 140, and 220 GHz. Results show that 〈111〉 oriented GaAs diodes are capable of delivering maximum RF power with highest DC to RF conversion efficiency up to 94 GHz; however, the L-S performance of 〈110〉 oriented GaAs diodes exceeds their other counterparts while the frequency of operation increases above 94 GHz. The results presented in this paper will be helpful for the future experimentalists to choose the GaAs substrate of appropriate orientation to fabricate DDR GaAs IMPATT diodes at mm-wave frequencies. PMID:27347524

Millimeter-wave monolithic diode-grid frequency multiplier

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate. A heavily doped layer of n(sup ++) GaAs is produced on the substrate and then a layer of intrinsic GaAs on said heavily doped layer on top of which a sheet of heavy doping (++) is produced. A thin layer of intrinsic GaAs grown over the sheet is capped with two metal contacts separated by a gap to produce two diodes connected back to back through the n(sup ++) layer for multiplication of frequency by an odd multiple. If only one metal contact caps the thin layer of intrinsic GaAs, the second diode contact is produced to connect to the n(sup ++) layer for multiplication of frequency by an even number. The odd or even frequency multiple is selected by a filter. A phased array of diodes in a grid will increase the power of the higher frequency generated.

Novel packaging for CW and QCW diode laser modules for operation with high power and duty cycles

NASA Astrophysics Data System (ADS)

Fassbender, Wilhelm; Lotz, Jens; Kissel, Heiko; Biesenbach, Jens

2018-02-01

Continuous wave (CW) and quasi-continuous wave (QCW) operated diode laser bars and arrays have found a wide range of industrial, medical, scientific, military and space applications with a broad variety in wavelength, pulse energy, pulse duration and beam quality. Recent applications require even higher power, duty cycles and power density. The heat loss will be dissipated by conductive cooling or liquid cooling close to the bars. We present the latest performance and reliability data of two novel high-brightness CW and QCW arrays of customized and mass-production modules, in compact and robust industry design for operation with high power and high duty cycles. All designs are based on single diode packages consisting of 10mm laser bars, soft or hard soldered between expansion matched submounts. The modular components cover a wide span of designs which differ basically in water/conduction (active/passive) cooled, single, linear (horizontal and vertical) arranged designs, as well as housed and unhoused modules. The different assembling technologies of active and passive cooled base plates affect the heat dissipation and therefore the reachable power at different QCW operating conditions, as well as the lifetime. As an example, a package consisting of 8 laser diodes, connected to a 28.8*13.5*7.0mm3 DCB (direct copper bonded) submount, passively or actively cooled is considered. This design is of particular interest for mobile applications seamless module to module building system, with an infinite number of laser bars at 1.7mm pitch. Using 940nm bars we can reach an optical output power per bar of 450W at 25°C base plate temperature with 10Hz, 1.2% duty cycle and 1.2ms pulse duration. As an additional example, micro channel coolers can be vertically stacked up to 50 diodes with a 1,15mm pitch. This design is suitable for all applications, demanding also compactness and light weight and high power density. Using near infrared bars and others, we can reach an optical output power of 250W per bar at 25°C coolant temperature at CW operation.

Determination of temperature and residual laser energy on film fiber-optic thermal converter for diode laser surgery.

PubMed

Liu, Weichao; Kong, Yaqun; Shi, Xiafei; Dong, Xiaoxi; Wang, Hong; Zhao, Jizhi; Li, Yingxin

2017-12-01

The diode laser was utilized in soft tissue incision of oral surgery based on the photothermic effect. The contradiction between the ablation efficiency and the thermal damage has always been in diode laser surgery, due to low absorption of its radiation in the near infrared region by biological tissues. Fiber-optic thermal converters (FOTCs) were used to improve efficiency for diode laser surgery. The purpose of this study was to determine the photothermic effect by the temperature and residual laser energy on film FOTCs. The film FOTC was made by a distal end of optical fiber impacting on paper. The external surface of the converter is covered by a film contained amorphous carbon. The diode laser with 810 nm worked at the different rated power of 1.0 W, 1.5 W, 2.0 W, 3.0 W, 4.0 W, 5.0 W, 6.0 W, 7.0 W, 8.0 W in continuous wave (CW)and pulse mode. The temperature of the distal end of optical fiber was recorded and the power of the residual laser energy from the film FOTC was measured synchronously. The temperature, residual power and the output power were analyzed by linear or exponential regression model and Pearson correlations analysis. The residual power has good linearity versus output power in CW and pulse modes (R 2  = 0.963, P < 0.01 for both). The temperature on film FOTCs increases exponentially with adjusted R 2  = 0.959 in continuous wave mode, while in pulsed mode with adjusted R 2  = 0.934. The temperature was elevated up to about 210 °C and eventually to be a stable state. Film FOTCs centralized approximately 50% of laser energy on the fiber tip both in CW and pulsed mode while limiting the ability of the laser light to interact directly with target tissue. Film FOTCs can concentrate part of laser energy transferred to heat on distal end of optical fiber, which have the feasibility of improving efficiency and reducing thermal damage of deep tissue.

Precision improvement of frequency-modulated continuous-wave laser ranging system with two auxiliary interferometers

NASA Astrophysics Data System (ADS)

Shi, Guang; Wang, Wen; Zhang, Fumin

2018-03-01

The measurement precision of frequency-modulated continuous-wave (FMCW) laser distance measurement should be proportional to the scanning range of the tunable laser. However, the commercial external cavity diode laser (ECDL) is not an ideal tunable laser source in practical applications. Due to the unavoidable mode hopping and scanning nonlinearity of the ECDL, the measurement precision of FMCW laser distance measurements can be substantially affected. Therefore, an FMCW laser ranging system with two auxiliary interferometers is proposed in this paper. Moreover, to eliminate the effects of ECDL, the frequency-sampling method and mode hopping influence suppression method are employed. Compared with a fringe counting interferometer, this FMCW laser ranging system has a measuring error of ± 20 μm at the distance of 5.8 m.

Diode Laser Excision of Oral Benign Lesions.

PubMed

Mathur, Ena; Sareen, Mohit; Dhaka, Payal; Baghla, Pallavi

2015-01-01

Lasers have made tremendous progress in the field of dentistry and have turned out to be crucial in oral surgery as collateral approach for soft tissue surgery. This rapid progress can be attributed to the fact that lasers allow efficient execution of soft tissue procedures with excellent hemostasis and field visibility. When matched to scalpel, electrocautery or high frequency devices, lasers offer maximum postoperative patient comfort. Four patients agreed to undergo surgical removal of benign lesions of the oral cavity. 810 nm diode lasers were used in continuous wave mode for excisional biopsy. The specimens were sent for histopathological examination and patients were assessed on intraoperative and postoperative complications. Diode laser surgery was rapid, bloodless and well accepted by patients and led to complete resolution of the lesions. The excised specimen proved adequate for histopathological examination. Hemostasis was achieved immediately after the procedure with minimal postoperative problems, discomfort and scarring. We conclude that diode lasers are rapidly becoming the standard of care in contemporary dental practice and can be employed in procedures requiring excisional biopsy of oral soft tissue lesions with minimal problems in histopathological diagnosis.

Compact and efficient CW 473nm blue laser with LBO intracavity frequency doubling

NASA Astrophysics Data System (ADS)

Qi, Yan; Wang, Yu; Wang, Yanwei; Zhang, Jing; Yan, Boxia

2016-10-01

With diode end pumped Nd:YAG directly and LBO intracavity frequency doubling, a compact, high efficient continuous wave blue laser at 473nm is realized. When the incident pump power reach 6.2W, 630mW maximum output power of blue laser at 473nm is achieved with 15mm long LBO, the optical-to-optical conversion efficiency is as high as 10.2%.

12  mJ Yb:YAG/Cr:YAG microchip laser.

PubMed

Guo, Xiaoyang; Tokita, Shigeki; Kawanaka, Junji

2018-02-01

We have developed a quasi-continuous wave diode end-pumped cryogenically cooled Yb:YAG/Cr:YAG passively Q-switched microchip laser. A maximum energy of 12.1 mJ with 3.7 MW of peak power was obtained. To the best of our knowledge, this is the highest energy and peak power obtained by an Yb:YAG/Cr:YAG microchip laser so far.

Optical coherence tomography-guided laser microsurgery for blood coagulation with continuous-wave laser diode.

PubMed

Chang, Feng-Yu; Tsai, Meng-Tsan; Wang, Zu-Yi; Chi, Chun-Kai; Lee, Cheng-Kuang; Yang, Chih-Hsun; Chan, Ming-Che; Lee, Ya-Ju

2015-11-16

Blood coagulation is the clotting and subsequent dissolution of the clot following repair to the damaged tissue. However, inducing blood coagulation is difficult for some patients with homeostasis dysfunction or during surgery. In this study, we proposed a method to develop an integrated system that combines optical coherence tomography (OCT) and laser microsurgery for blood coagulation. Also, an algorithm for positioning of the treatment location from OCT images was developed. With OCT scanning, 2D/3D OCT images and angiography of tissue can be obtained simultaneously, enabling to noninvasively reconstruct the morphological and microvascular structures for real-time monitoring of changes in biological tissues during laser microsurgery. Instead of high-cost pulsed lasers, continuous-wave laser diodes (CW-LDs) with the central wavelengths of 450 nm and 532 nm are used for blood coagulation, corresponding to higher absorption coefficients of oxyhemoglobin and deoxyhemoglobin. Experimental results showed that the location of laser exposure can be accurately controlled with the proposed approach of imaging-based feedback positioning. Moreover, blood coagulation can be efficiently induced by CW-LDs and the coagulation process can be monitored in real-time with OCT. This technology enables to potentially provide accurate positioning for laser microsurgery and control the laser exposure to avoid extra damage by real-time OCT imaging.

Remote sensing of atmospheric NO2 by employing the continuous-wave differential absorption lidar technique.

PubMed

Mei, Liang; Guan, Peng; Kong, Zheng

2017-10-02

Differential absorption lidar (DIAL) technique employed for remote sensing has been so far based on the sophisticated narrow-band pulsed laser sources, which require intensive maintenance during operation. In this work, a continuous-wave (CW) NO 2 DIAL system based on the Scheimpflug principle has been developed by employing a compact high-power CW multimode 450 nm laser diode as the light source. Laser emissions at the on-line and off-line wavelengths of the NO 2 absorption spectrum are implemented by tuning the injection current of the laser diode. Lidar signals are detected by a 45° tilted area CCD image sensor satisfying the Scheimpflug principle. Range-resolved NO 2 concentrations on a near-horizontal path are obtained by the NO 2 DIAL system in the range of 0.3-3 km and show good agreement with those measured by a conventional air pollution monitoring station. A detection sensitivity of ± 0.9 ppbv at 95% confidence level in the region of 0.3-1 km is achieved with 15-minute averaging and 700 m range resolution during hours of darkness, which allows accurate concentration measurement of ambient NO 2 . The low-cost and robust DIAL system demonstrated in this work opens up many possibilities for field NO 2 remote sensing applications.

Optical coherence tomography-guided laser microsurgery for blood coagulation with continuous-wave laser diode

NASA Astrophysics Data System (ADS)

Chang, Feng-Yu; Tsai, Meng-Tsan; Wang, Zu-Yi; Chi, Chun-Kai; Lee, Cheng-Kuang; Yang, Chih-Hsun; Chan, Ming-Che; Lee, Ya-Ju

2015-11-01

Blood coagulation is the clotting and subsequent dissolution of the clot following repair to the damaged tissue. However, inducing blood coagulation is difficult for some patients with homeostasis dysfunction or during surgery. In this study, we proposed a method to develop an integrated system that combines optical coherence tomography (OCT) and laser microsurgery for blood coagulation. Also, an algorithm for positioning of the treatment location from OCT images was developed. With OCT scanning, 2D/3D OCT images and angiography of tissue can be obtained simultaneously, enabling to noninvasively reconstruct the morphological and microvascular structures for real-time monitoring of changes in biological tissues during laser microsurgery. Instead of high-cost pulsed lasers, continuous-wave laser diodes (CW-LDs) with the central wavelengths of 450 nm and 532 nm are used for blood coagulation, corresponding to higher absorption coefficients of oxyhemoglobin and deoxyhemoglobin. Experimental results showed that the location of laser exposure can be accurately controlled with the proposed approach of imaging-based feedback positioning. Moreover, blood coagulation can be efficiently induced by CW-LDs and the coagulation process can be monitored in real-time with OCT. This technology enables to potentially provide accurate positioning for laser microsurgery and control the laser exposure to avoid extra damage by real-time OCT imaging.

A quasioptically stabilized resonant-tunneling-diode oscillator for the millimeter- and submillimeter-wave regions

NASA Technical Reports Server (NTRS)

Brown, Elliott R.; Parker, Christopher D.; Molvar, Karen M.; Stephan, Karl D.

1992-01-01

A semiconfocal open-cavity resonator has been used to stabilize a resonant-tunneling-diode waveguide oscillator at frequencies near 100 GHz. The high quality factor of the open cavity resulted in a linewidth of approximately 10 kHz at 10 dB below the peak, which is about 100 times narrower than the linewidth of an unstabilized waveguide oscillator. This technique is well suited for resonant-tunneling-diode oscillators in the submillimeter-wave region.

Demonstration of optical rogue waves using a laser diode emitting at 980  nm and a fiber Bragg grating.

PubMed

Lee, Min Won; Baladi, Fadwa; Burie, Jean-René; Bettiati, Mauro A; Boudrioua, Azzedine; Fischer, Alexis P A

2016-10-01

Rogue waves are observed for the first time, to the best of our knowledge, in a 980 nm laser diode subject to filtered optical feedback via a fiber Bragg grating. By counting the number of rogue waves in a fixed time window, a rogue wave map is established experimentally as a function of both the optical feedback ratio and the laser current. The comparison with low frequency fluctuations (LFFs) reveals that the rogue waves observed in our system are, in fact, LFF jump-ups.

InGaN laser diode with metal-free laser ridge using n+-GaN contact layers

NASA Astrophysics Data System (ADS)

Malinverni, Marco; Tardy, Camille; Rossetti, Marco; Castiglia, Antonino; Duelk, Marcus; Vélez, Christian; Martin, Denis; Grandjean, Nicolas

2016-06-01

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n+-type GaN layer deposited on top of the structure. The low sheet resistance of the n+-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n+-GaN top layer and the p++-GaN layer. Continuous-wave lasing at 400 nm with an output power of 100 mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA·cm-2.

15 mJ single-frequency Ho:YAG laser resonantly pumped by a 1.9 µm laser diode

NASA Astrophysics Data System (ADS)

Na, Q. X.; Gao, C. Q.; Wang, Q.; Zhang, Y. X.; Gao, M. W.; Ye, Q.; Li, Y.

2016-09-01

A 2.09 µm injection-seeded single-frequency Ho:YAG laser resonantly pumped by a 1.91 µm laser diode is demonstrated for the first time. The seed laser is a continuous wave (CW) Ho:YAG non-planar ring oscillator. 15.15 mJ single-frequency output energy is obtained from the injection-seeded Q-switched Ho:YAG laser, with a pulse repetition rate of 200 Hz and a pulse width of 109 ns. The half-width of the pulse spectrum is measured to be 4.19 MHz by using the heterodyne technique. The fluctuation of the center frequency of the single-frequency pulses is 1.52 MHz (root mean square (RMS)) in 1 h.

Diode-pumped dual-wavelength Nd:LSO laser at 1059 and 1067  nm with nearly diffraction-limited beam quality.

PubMed

Huang, Xiaoxu; Lan, Jinglong; Lin, Zhi; Wang, Yi; Xu, Bin; Xu, Huiying; Cai, Zhiping; Xu, Xiaodong; Zhang, Jian; Xu, Jun

2016-04-10

We report a diode-pumped continuous-wave simultaneous dual-wavelength Nd:LSO laser at 1059 and 1067 nm. By employing a specially coated output coupler with relatively high transmissions at high-gain emission lines of 1075 and 1079 nm, the two low-gain emission lines, 1059 and 1067 nm, can be achieved, for the first time to our knowledge, with maximum output power of 1.27 W and slope efficiency of about 29.2%. The output power is only limited by the available pump power. Output beam quality is also measured to be about 1.19 and 1.21 of the beam propagation factors in the x and y directions, respectively.

External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

NASA Astrophysics Data System (ADS)

Wang, Meng; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Lu, Ming; Stein, Aaron; Belenky, Gregory

2018-01-01

The external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25 μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25 μm corresponding to ˜25 meV of tuning range.

Yellow light generation by frequency doubling of a diode-pumped Nd:YAG laser

NASA Astrophysics Data System (ADS)

Jia, Fu-qiang; Zheng, Quan; Xue, Qing-hua; Bu, Yi-kun; Qian, Long-sheng

2006-03-01

We demonstrate the generation of TEM00 mode yellow light in critically type II phase-matched KTiOPO4 (KTP) with intracavity frequency doubling of a diode-pumped Nd:YAG laser at room temperature. After a 150 μm thick etalon have been inserted into the cavity, the stability and beam quality of the second harmonic generation (SHG) is enhanced. A continuous wave (CW) TEM00 mode output power of 1.67 W at 556 nm is obtained at a pump level of 16 W. The total optical to optical conversion efficiency is about 10.44%. To the best of our knowledge, this is the first Watt-level yellow light generation by frequency doubling of Nd:YAG laser.

Terahertz quasi time-domain spectroscopy based on telecom technology for 1550 nm.

PubMed

Kohlhaas, Robert B; Rehn, Arno; Nellen, Simon; Koch, Martin; Schell, Martin; Dietz, Roman J B; Balzer, Jan C

2017-05-29

We present a fiber-coupled terahertz quasi time-domain spectroscopy system driven by a laser with a central wavelength of 1550 nm. By using a commercially available multimode laser diode in combination with state-of-the-art continuous wave antennas, a bandwidth of more than 1.8 THz is achieved. The peak signal-to-noise ratio is around 60 dB. A simulation based on the optical spectrum of the laser diode and the transfer function of the THz path is in agreement with the experimental results. The system is used to extract the refractive index from two different samples and the results indicate that the performance is up to 1.8 THz comparable to a terahertz time-domain spectroscopy system.

Energy transfer in Tm,Ho:KYW crystal and diode-pumped microchip laser operation.

PubMed

Kurilchik, Sergey; Gusakova, Natali; Demesh, Maxim; Yasukevich, Anatol; Kisel, Viktor; Pavlyuk, Anatoly; Kuleshov, Nikolai

2016-03-21

An investigation of Tm-Ho energy transfer in Tm(5at.%),Ho(0.4at.%):KYW single crystal by two independent techiques was performed. Based on fluorescence dynamics measurements, energy transfer parameters P₇₁ and P₂₈ for direct (Tm→Ho) and back (Ho→Tm) transfers, respectively, as well as equilibrium constant Θ were evaluated. The obtained results were supported by calculation of microscopic interaction parameters according to the Förster-Dexter theory for a dipole-dipole interaction. Diode-pumped continuous-wave operation of Tm,Ho:KYW microchip laser was demonstrated, for the first time to our knowledge. Maximum output power of 77 mW at 2070 nm was achieved at the fundamental TEM₀₀ mode.

Quartz-enhanced photoacoustic spectroscopy sensor for ethylene detection with a 3.32 μm distributed feedback laser diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen Ba, T.; Triki, M.; Vicet, A., E-mail: a.vicet@univ-montp2.fr

2015-02-15

An antimonide distributed feedback quantum wells diode laser operating at 3.32 μm at near room temperature in the continuous wave regime has been used to perform ethylene detection based on quartz enhanced photoacoustic spectroscopy. An absorption line centered at 3007.52 cm{sup −1} was investigated and a normalized noise equivalent absorption coefficient (1σ) of 3.09 10{sup −7} cm{sup −1} W Hz{sup −1/2} was obtained. The linearity and the stability of the detection have been evaluated. Biological samples’ respiration has been measured to validate the feasibility of the detection setup in an agronomic environment, especially on ripening apples.

External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

DOE PAGES

Wang, Meng; Hosoda, Takashi; Shterengas, Leon; ...

2017-09-14

Here, the external cavity tunable mid-infrared emitters based on Littrow configuration and utilizing three stages type-I quantum well cascade diode laser gain elements were designed and fabricated. The free-standing coated 7.5-μm-wide ridge waveguide lasers generated more than 30 mW of continuous wave power near 3.25 μm at 20°C when mounted epi-side-up on copper blocks. The external cavity lasers (ECLs) utilized 2-mm-long gain chips with straight ridge design and anti-/neutral-reflection coated facets. The ECLs demonstrated narrow spectrum tunable operation with several milliwatts of output power in spectral region from 3.05 to 3.25 μm corresponding to ~25 meV of tuning range.

Laser emission from diode-pumped Nd:YAG ceramic waveguide lasers realized by direct femtosecond-laser writing technique.

PubMed

Salamu, Gabriela; Jipa, Florin; Zamfirescu, Marian; Pavel, Nicolaie

2014-03-10

We report on realization of buried waveguides in Nd:YAG ceramic media by direct femtosecond-laser writing technique and investigate the waveguides laser emission characteristics under the pump with fiber-coupled diode lasers. Laser pulses at 1.06 μm with energy of 2.8 mJ for the pump with pulses of 13.1-mJ energy and continuous-wave output power of 0.49 W with overall optical efficiency of 0.13 were obtained from a 100-μm diameter circular cladding waveguide realized in a 0.7-at.% Nd:YAG ceramic. A circular waveguide of 50-μm diameter yielded laser pulses at 1.3 μm with 1.2-mJ energy.

Electrically injected GaAsBi/GaAs single quantum well laser diodes

NASA Astrophysics Data System (ADS)

Liu, Juanjuan; Pan, Wenwu; Wu, Xiaoyan; Cao, Chunfang; Li, Yaoyao; Chen, Xiren; Zhang, Yanchao; Wang, Lijuan; Yan, Jinyi; Zhang, Dongliang; Song, Yuxin; Shao, Jun; Wang, Shumin

2017-11-01

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.

Linewidth and tuning characteristics of terahertz quantum cascade lasers.

PubMed

Barkan, A; Tittel, F K; Mittleman, D M; Dengler, R; Siegel, P H; Scalari, G; Ajili, L; Faist, J; Beere, H E; Linfield, E H; Davies, A G; Ritchie, D A

2004-03-15

We have measured the spectral linewidths of three continuous-wave quantum cascade lasers operating at terahertz frequencies by heterodyning the free-running quantum cascade laser with two far-infrared gas lasers. Beat notes are detected with a GaAs diode mixer and a microwave spectrum analyzer, permitting very precise frequency measurements and giving instantaneous linewidths of less than -30 kHz. Characteristics are also reported for frequency tuning as the injection current is varied.

Generation of phase-locked and tunable continuous-wave radiation in the terahertz regime.

PubMed

Quraishi, Qudsia; Griebel, Martin; Kleine-Ostmann, Thomas; Bratschitsch, Rudolf

2005-12-01

Broadly tunable phase-stable single-frequency terahertz radiation is generated with an optical heterodyne photomixer. The photomixer is excited by two near-infrared CW diode lasers that are phase locked to the stabilized optical frequency comb of a femtosecond titanium:sapphire laser. The terahertz radiation emitted by the photomixer is downconverted into RF frequencies with a waveguide harmonic mixer and measurement-limited linewidths at the Hertz level are demonstrated.

Development of MBE grown Pb-salt semiconductor lasers for the 8.0 to 15.0 micrometer spectral region

NASA Technical Reports Server (NTRS)

Miller, M. D.

1981-01-01

Diodes lasers are fabricated using multiple source molecular beam expitaxial growth of (PbSn)Te on BaF2 substrates. Methods for crystal growth, crystal transfer, and device fabrication by photolithographic techniques were developed. The lasers operate in the spectra range from 10 microns to 14 microns and at temperatures from 12K to 60K continuous wave and to 95 K pulsed.

Development and optimization of a diode laser for photodynamic therapy.

PubMed

Lim, Hyun Soo

2011-01-01

This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes.

Development and optimization of a diode laser for photodynamic therapy

PubMed Central

Lim, Hyun Soo

2011-01-01

Background and Aims: This study demonstrated the development of a laser system for cancer treatment with photodynamic therapy (PDT) based on a 635 nm laser diode. In order to optimize efficacy in PDT, the ideal laser system should deliver a homogeneous nondivergent light energy with a variable spot size and specific wavelength at a stable output power. Materials and Methods: We developed a digital laser beam controller using the constant current method to protect the laser diode resonator from the current spikes and other fluctuations, and electrical faults. To improve the PDT effects, the laser system should deliver stable laser energy in continuous wave (CW), burst mode and super burst mode, with variable irradiation times depending on the tumor type and condition. Results and Comments: The experimental results showed the diode laser system described herein was eminently suitable for PDT. The laser beam was homogeneous without diverging and the output power increased stably and in a linear manner from 10 mW to 1500 mW according to the increasing input current. Variation between the set and delivered output was less than 7%. Conclusions: The diode laser system developed by the author for use in PDT was compact, user-friendly, and delivered a stable and easily adjustable output power at a specific wavelength and user-set emission modes. PMID:24155529

Subsurface optical stimulation of rat prostate cavernous nerves using a continuous wave, single mode, 1490 nm diode laser

NASA Astrophysics Data System (ADS)

Tozburun, Serhat; Stahl, Charlotte S. D.; Hutchens, Thomas C.; Lagoda, Gwen A.; Burnett, Arthur L.; Fried, Nathaniel M.

2013-03-01

Successful identification of the cavernous nerves (CN's) during radical prostatectomy requires detection of the CN's through a thin layer of overlying fascia. This study explores the 1490 nm infrared (IR) diode laser wavelength for rapid and deep subsurface CN stimulation in a rat model, in vivo. A 150-mW, 1490-nm diode laser providing an optical penetration depth of 520 μm was used to stimulate the CN's in 8 rats through a single mode fiber optic probe with 1-mm-diameter spot and 15 s irradiation time. Successful ONS was judged by an intracavernous pressure response (ICP) in the rat penis. Subsurface ONS at 1490 nm was also compared with previous studies using 1455 and 1550 nm IR diode laser wavelengths. ONS was observed through fascia layers up to 380 μm thick using an incident laser power of 50 mW. ICP response times as short as 4.6 +/- 0.2 s were recorded using higher laser powers bust still below the nerve damage threshold. The 1490-nm diode laser represents a compact, low cost, high power, and high quality infrared light source for use in ONS. This wavelength provides deeper optical penetration than 1455 nm and more rapid and efficient nerve stimulation than 1550 nm.

Characteristic of laser diode beam propagation through a collimating lens.

PubMed

Xu, Qiang; Han, Yiping; Cui, Zhiwei

2010-01-20

A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

Dual-wavelength, continuous-wave Yb:YAG laser for high-resolution photothermal common-path interferometry.

PubMed

Zhuang, Fengjiang; Jungbluth, Bernd; Gronloh, Bastian; Hoffmann, Hans-Dieter; Zhang, Ge

2013-07-20

We present a continuous-wave (CW) intracavity frequency-doubled Yb:YAG laser providing 1030 and 515 nm output simultaneously. This laser system was designed for photothermal common-path interferometry to measure spatially resolved profiles of the linear absorption in dielectric media and coatings for visible or infrared light as well as of the nonlinear absorption for the combination of both. A Z-shape laser cavity was designed, providing a beam waist in which an LBO crystal was located for effective second-harmonic generation (SHG). Suitable frequency conversion parameters and cavity configurations were discussed to achieve the optimal performance of a diode-pumped CW SHG laser. A 12.4 W 1030 nm laser and 5.4 W 515 nm laser were developed simultaneously in our experiment.

Synchronous Half-Wave Rectifier

NASA Technical Reports Server (NTRS)

Rippel, Wally E.

1989-01-01

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

NASA Astrophysics Data System (ADS)

Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

2018-05-01

We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

Hybrid indium phosphide-on-silicon nanolaser diode

NASA Astrophysics Data System (ADS)

Crosnier, Guillaume; Sanchez, Dorian; Bouchoule, Sophie; Monnier, Paul; Beaudoin, Gregoire; Sagnes, Isabelle; Raj, Rama; Raineri, Fabrice

2017-04-01

The most-awaited convergence of microelectronics and photonics promises to bring about a revolution for on-chip data communications and processing. Among all the optoelectronic devices to be developed, power-efficient nanolaser diodes able to be integrated densely with silicon photonics and electronics are essential to convert electrical data into the optical domain. Here, we report a demonstration of ultracompact laser diodes based on one-dimensional (1D) photonic crystal (PhC) nanocavities made in InP nanoribs heterogeneously integrated on a silicon-waveguide circuitry. The specific nanorib design enables an efficient electrical injection of carriers in the nanocavity without spoiling its optical properties. Room-temperature continuous-wave (CW) single-mode operation is obtained with a low current threshold of 100 µA. Laser emission at 1.56 µm in the silicon waveguides is obtained with wall-plug efficiencies greater than 10%. This result opens up exciting avenues for constructing optical networks at the submillimetre scale for on-chip interconnects and signal processing.

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savanier, Marc, E-mail: msavanier@eng.ucsd.edu; Mookherjea, Shayan, E-mail: smookherjea@eng.ucsd.edu

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, wemore » generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.« less

Generating photon pairs from a silicon microring resonator using an electronic step recovery diode for pump pulse generation

NASA Astrophysics Data System (ADS)

Savanier, Marc; Mookherjea, Shayan

2016-06-01

Generation of photon pairs from compact, manufacturable, and inexpensive silicon (Si) photonic devices at room temperature may help develop practical applications of quantum photonics. An important characteristic of photon-pair generation is the two-photon joint spectral intensity, which describes the frequency correlations of the photon pair. Recent attempts to generate a factorizable photon-pair state suitable for heralding have used short optical pump pulses from mode-locked lasers, which are much more expensive and bigger table-top or rack-sized instruments compared with the Si microchip used for generating photon pairs, and thus dominate the cost and inhibit the miniaturization of the source. Here, we generate photon pairs from an Si microring resonator by using an electronic step-recovery diode to drive an electro-optic modulator which carves the pump light from a continuous-wave laser diode into pulses of the appropriate width, thus potentially eliminating the need for optical mode-locked lasers.

Proofs for the Wave Theory of Plants

NASA Astrophysics Data System (ADS)

Wagner, Orvin E.

1997-03-01

Oscillatory behavior in plants. (2)Standing waves observed coming from probes equally spaced up tree trunks and freshly cut live wood samples. (3)Beat frequencies observed while applying AC voltages to plants. (4)Plant length quantization. (5)Plant growth angle and voltage quantization with respect to the gravitational field. (6)The measurement of plant frequences with a low frequency spectrum analyzer which correlate with the frequencies observed by other means such as by measuring plant lengths, considered as half wavelengths, and beat frequencies. (7)Voltages obtained from insulated, isolated from light, diode dies placed in slits in tree trunks. Diodes become relatively low impedance sources for voltages as high as eight volts. Diodes indicate charge separating longitudinal standing waves sweeping up and down a tree trunk. Longitudinal waves also indicated by plant structure. (8)The measured discrete wave velocities appear to be dependent on their direction of travel with respect to the gravitational field. These provide growth references for the plant and a wave guide affect. For references see Wagner Research Laboratory Web Page.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

A Q-switched Ho:YAG laser with double anti-misalignment corner cubes pumped by a diode-pumped Tm:YLF laser

NASA Astrophysics Data System (ADS)

Wang, Y. P.; Dai, T. Y.; Wu, J.; Ju, Y. L.; Yao, B. Q.

2018-06-01

We report the acousto-optically Q-switched Ho:YAG laser with double anti-misalignment corner cubes pumped by a diode-pumped Tm:YLF laser. In the continuous-wave operation of Ho:YAG laser, the maximum s-polarized output power of 3.2 W at 2090.3 nm was obtained under the absorbed pump power of 12.9 W by rotating the fast axis of quarter-wave plate to change the output transmission of laser cavity. The corresponding optical-to-optical conversion efficiency was 24.8% and the slope efficiency was 55.7%. When one of the corner cubes was rotated to 11.8° around vertical direction or 6.7° around horizontal direction, the laser could still operate stably. For the Q-switched operation, the pulse energy of Ho:YAG laser was 9.9 mJ with a pulse width of 53 ns at the repetition rate of 100 Hz, resulting in a peak power of 186.8 kW. The beam quality factor M2 of Ho:YAG laser was 1.3.

Characteristics of a large vacuum wave precursor on the SABRE voltage adder MITL and extraction ion diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Hanson, D.L.; Menge, P.R.

SABRE (Sandia Accelerator and Beam Research Experiment) is a ten-cavity linear induction magnetically insulated voltage adder (6 MV, 300 kA) operated in positive polarity to investigate issues relevant to ion beam production and propagation for inertial confinement fusion. The voltage adder section is coupled to an applied-B extraction ion diode via a long coaxial output transmission line. Observations indicate that the power propagates in a vacuum wave prior to electron emission. After the electron emission threshold is reached, power propagates in a magnetically insulated wave. The precursor is observed to have a dominant impact on he turn-on, impedance history, andmore » beam characteristics of applied-B ion diodes since the precursor voltage is large enough to cause electron emission at the diode from both the cathode feed and cathode tips. The amplitude of the precursor at the load (3--4.5 MV) is a significant fraction of the maximum load voltage (5--6 MV) because (1) the transmission line gaps ( {approx} 9 cm at output) and therefore impedances are relatively large, and hence the electric field threshold for electron emission (200 to 300 kV/cm) is not reached until well into the power pulse rise time; and (2) the rapidly falling forward wave and diode impedance reduces the ratio of main pulse voltage to precursor voltage. Experimental voltage and current data from the transmission line and the ion diode will be presented and compared with TWOQUICK (2-D electromagnetic PIC code) simulations and analytic models.« less

Possible repetitive pulse operation of diode-pumped alkali laser (DPAL)

NASA Astrophysics Data System (ADS)

Endo, Masamori

2017-01-01

A theoretical study has been conducted for investigating the possibility of a diode-pumped alkali laser (DPAL) operating in repetitive pulsed mode. A one-dimensional, time-dependent rate-equation simulation of a Cs DPAL was developed to calculate the dynamic behavior of the active medium when Q-switching or cavity dumping was applied. The simulation modeled our small-scale experimental apparatus. In the continuous-wave (CW) mode, the calculated output power was in good agreement with the experimental value. Q-switching was shown to be ineffective because of the short spontaneous lifetime of the active medium, on the order of 10 ns. On the other hand, cavity dumping was proven to be effective. In typical operational conditions, a 54 times increase in peak power with respect to the CW power was predicted.

Perovskite photonic sources

NASA Astrophysics Data System (ADS)

Sutherland, Brandon R.; Sargent, Edward H.

2016-05-01

The field of solution-processed semiconductors has made great strides; however, it has yet to enable electrically driven lasers. To achieve this goal, improved materials are required that combine efficient (>50% quantum yield) radiative recombination under high injection, large and balanced charge-carrier mobilities in excess of 10 cm2 V-1 s-1, free-carrier densities greater than 1017 cm-3 and gain coefficients exceeding 104 cm-1. Solid-state perovskites are -- in addition to galvanizing the field of solar electricity -- showing great promise in photonic sources, and may be the answer to realizing solution-cast laser diodes. Here, we discuss the properties of perovskites that benefit light emission, review recent progress in perovskite electroluminescent diodes and optically pumped lasers, and examine the remaining challenges in achieving continuous-wave and electrically driven lasing.

Efficient CW diode-pumped Tm, Ho:YLF laser with tunability near 2.067 microns

NASA Technical Reports Server (NTRS)

Mcguckin, B. T.; Menzies, Robert T.

1992-01-01

A conversion efficiency of 42 percent and slope efficiency of approximately 60 percent relative to absorbed pump power are reported from a continuous wave diode-pumped Tm, Ho:YLF laser at 2 microns with output power of 84 mW at sub-ambient temperatures. The emission spectrum is etalon tunable over a range of 16/cm centered on 2.067 microns, with fine tuning capability of the transition frequency with crystal temperature at a measured rate of about -0.03/cm-K. The effective emission cross section is measured to be 5 x 10 exp -21 sq cm. These and other aspects of the laser performance are discussed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications.

Mode-locked Ti:sapphire laser oscillators pumped by wavelength-multiplexed laser diodes

NASA Astrophysics Data System (ADS)

Sugiyama, Naoto; Tanaka, Hiroki; Kannari, Fumihiko

2018-05-01

We directly pumped a Ti:sapphire laser by combining 478 and 520 nm laser diodes to prevent the effect of absorption loss induced by the pump laser of shorter wavelengths (∼450 nm). We obtain a continuous-wave output power of 660 mW at a total incident pump power of 3.15 W. We demonstrate mode locking using a semiconductor saturable absorber mirror, and 126 fs pulses were obtained at a repetition rate of 192 MHz. At the maximum pump power, the average output power is 315 mW. Shorter mode-locked pulses of 42 and 48 fs were respectively achieved by Kerr-lens mode locking with average output powers of 280 and 360 mW at a repetition rate of 117 MHz.

Cyan laser diode grown by plasma-assisted molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turski, H., E-mail: henryk@unipress.waw.pl; Muziol, G.; Wolny, P.

We demonstrate AlGaN-cladding-free laser diodes (LDs), operating in continuous wave (CW) mode at 482 nm grown by plasma-assisted molecular beam epitaxy (PAMBE). The maximum CW output power was 230 mW. LDs were grown on c-plane GaN substrates obtained by hydride vapor phase epitaxy. The PAMBE process was carried out in metal-rich conditions, supplying high nitrogen flux (Φ{sub N}) during quantum wells (QWs) growth. We found that high Φ{sub N} improves quality of high In content InGaN QWs. The role of nitrogen in the growth of InGaN on (0001) GaN surface as well as the influence of LDs design on threshold currentmore » density are discussed.« less

High-power linearly polarized diode-side-pumped a-cut Nd:GdVO4 rod laser

NASA Astrophysics Data System (ADS)

Li, Xiaowen; Qian, Jianqiang; Zhang, Baitao

2017-03-01

An efficiently high-power diode-side-pumped Nd:GdVO4 rod laser system was successfully demonstrated, operating in continuous wave (CW) and acousto-optically (AO) Q-switched regime. With a 65 mm-long a-cut Nd:GdVO4 crystal, a maximum linearly polarized CW output power of 60 W at 1063.2 nm was obtained under an absorbed pump power of 180 W, corresponding to a slope efficiency of 50.6%. The output laser beam was linearly polarized with a degree of polarization of 98%. In AO Q-switched operation, the highest output power, minimum pulse width, and highest peak power were achieved to be 42 W, 36 ns, and 58 kW at the pulse repetition frequency of 20 kHz.

Simultaneous triple 914 nm, 1084 nm, and 1086 nm operation of a diode-pumped Nd:YVO4 laser

NASA Astrophysics Data System (ADS)

Lü, Yanfei; Xia, Jing; Liu, Huilong; Pu, Xiaoyun

2014-10-01

We report a diode-pumped continuous-wave (cw) triple-wavelength Nd:YVO4 laser operating at 914, 1084, and 1086 nm. A theoretical analysis has been introduced to determine the threshold conditions for simultaneous triple-wavelength laser. Using a T-shaped cavity, we realized an efficient triple-wavelength operation at 4F3/2→4I9/2 and 4F3/2→4I11/2 transitions for Nd:YVO4 crystal, simultaneously. At an absorbed pump power of 16 W (or 25 W of incident pump power), the maximum output power was 2.3 W, which included 914 nm, 1084 nm, and 1086 nm three wavelengths, and the optical conversion efficiency with respect to the absorbed pump power was 14.4%.

Characterization of a fiber-less, multichannel optical probe for continuous wave functional near-infrared spectroscopy based on silicon photomultipliers detectors: in-vivo assessment of primary sensorimotor response.

PubMed

Chiarelli, Antonio M; Libertino, Sebania; Zappasodi, Filippo; Mazzillo, Massimo; Pompeo, Francesco Di; Merla, Arcangelo; Lombardo, Salvatore; Fallica, Giorgio

2017-07-01

We report development, testing, and in vivo characterization of a multichannel optical probe for continuous wave (CW) functional near-infrared spectroscopy (fNIRS) that relies on silicon photomultipliers (SiPMs) detectors. SiPMs are cheap, low voltage, and robust semiconductor light detectors with performances analogous to photomultiplier tubes (PMTs). In contrast with PMTs, SiPMs allow direct contact with the head and transfer of the analog signals through thin cables greatly increasing the system flexibility avoiding optical fibers. The coupling of SiPMs and light-emitting diodes (LEDs) made the optical probe lightweight and robust against motion artifacts. After characterization of SiPM performances, which was proven to provide a noise equivalent power below 3 fW, the apparatus was compared through an in vivo experiment to a commercial system relying on laser diodes, PMTs, and optical fibers for light probing and detection. The optical probes were located over the primary sensorimotor cortex and the similarities between the hemodynamic responses to the contralateral motor task were assessed. When compared to other state-of-the-art wearable fNIRS systems, where photodiode detectors are employed, the single photon sensitivity and dynamic range of SiPMs can fully exploit the long and variable interoptode distances needed for correct estimation of brain hemodynamics using CW-fNIRS.

Millimeter-wave active probe

DOEpatents

Majidi-Ahy, Gholamreza; Bloom, David M.

1991-01-01

A millimeter-wave active probe for use in injecting signals with frequencies above 50GHz to millimeter-wave and ultrafast devices and integrated circuits including a substrate upon which a frequency multiplier consisting of filter sections and impedance matching sections are fabricated in uniplanar transmission line format. A coaxial input and uniplanar 50 ohm transmission line couple an approximately 20 GHz input signal to a low pass filter which rolls off at approximately 25 GHz. An input impedance matching section couples the energy from the low pass filter to a pair of matched, antiparallel beam lead diodes. These diodes generate odd-numberd harmonics which are coupled out of the diodes by an output impedance matching network and bandpass filter which suppresses the fundamental and third harmonics and selects the fifth harmonic for presentation at an output.

Tunable terahertz wave generation through a bimodal laser diode and plasmonic photomixer.

PubMed

Yang, S-H; Watts, R; Li, X; Wang, N; Cojocaru, V; O'Gorman, J; Barry, L P; Jarrahi, M

2015-11-30

We demonstrate a compact, robust, and stable terahertz source based on a novel two section digital distributed feedback laser diode and plasmonic photomixer. Terahertz wave generation is achieved through difference frequency generation by pumping the plasmonic photomixer with two output optical beams of the two section digital distributed feedback laser diode. The laser is designed to offer an adjustable terahertz frequency difference between the emitted wavelengths by varying the applied currents to the laser sections. The plasmonic photomixer is comprised of an ultrafast photoconductor with plasmonic contact electrodes integrated with a logarithmic spiral antenna. We demonstrate terahertz wave generation with 0.15-3 THz frequency tunability, 2 MHz linewidth, and less than 5 MHz frequency stability over 1 minute, at useful power levels for practical imaging and sensing applications.

Microwave generation enhancement of X-band CRBWO by use of coaxial dual annular cathodes

NASA Astrophysics Data System (ADS)

Teng, Yan; Sun, Jun; Chen, Changhua; Shao, Hao

2013-07-01

This paper presents an approach that greatly enhances both the output power and the conversion efficiency of the coaxial relativistic backward wave oscillator (CRBWO) by using coaxial dual annular cathodes, which increases the diode current rather than the diode voltage. The reasons for the maladjustment of CRBWO under a high diode voltage are analyzed theoretically. It is found that by optimization of the diode structure, the shielding effect of the space charge of the outer beams on the inner cathode can be alleviated effectively and dual annular beams with the same kinetic energy can be explosively emitted in parallel. The coaxial reflector can enhance the conversion efficiency by improving the premodulation of the beams. The electron dump on the inner conductor ensures that the electron beams continue to provide kinetic energy to the microwave output until they vanish. Particle-in-cell (PIC) simulation results show that generation can be enhanced up to an output power level of 3.63 GW and conversion efficiency of 45% at 8.97 GHz under a diode voltage of 659 kV and current of 12.27 kA. The conversion efficiency remains above 40% and the output frequency variation is less than 100 MHz over a voltage range of more than 150 kV. Also, the application of the coaxial dual annular cathodes means that the diode impedance is matched to that of the transmission line of the accelerators. This impedance matching can effectively eliminate power reflection at the diode, and thus increase the energy efficiency of the entire system.

Evaluation of the Diode laser (810nm, 980 nm) on color change of teeth after external bleaching

PubMed Central

Kiomars, Nazanin; Azarpour, Pouneh; Mirzaei, Mansooreh; Hashemi kamangar, Sedighe Sadat; Kharazifard, Mohammad Javad

2016-01-01

Subject and aim: The aim of this study was to evaluate the efficiency of diode laser-activated bleaching systems for color change of teeth. Materials & Methods: 40 premolars with intact enamel surfaces were selected for five external bleaching protocols (n=8). Two different wavelengths of diode laser (810 and 980 nm) with two different hydrogen peroxide concentrations (30% and 46%) were selected for laser bleaching. Group 1 received bleaching (Heydent- Germany) with a 810 nm diode laser; Group 2 received bleaching (Heydent- Germany) with a 980 nm diode laser; Group 3 received bleaching (laser white*20- Biolase) with a 810 nm diode laser; Group 4 received bleaching (laser white*20- Biolase) with a 980 nm diode laser, with an output power of 1.5 W, in continuous wave (cw) mode for each irradiation. Group 5 as control group received 40% hydrogen peroxide (Opalescence Boost, Ultradent-USA) with no light activation. The color of teeth was scored at baseline and 1 week after bleaching with spectrophotometer. Color change data on the CIEL*a*b* system were analyzed statistically by the one-way ANOVA and Tukey's HSD test. Results: All the bleaching techniques resulted in shade change. According to ΔE values, all techniques were effective to bleach the teeth (ΔE ≥ 3). Statistically significant differences were detected among bleaching protocols (p=0.06). Regarding shade change values expressed as ΔL*, Δa*, Δb*, ΔE*, laser bleached groups were no statistically different with each other (p>0.05). Conclusion: Bleaching with different wavelengths of diode laser resulted in the same results. PMID:28765671

Ablation of dentin by irradiation of violet diode laser

NASA Astrophysics Data System (ADS)

Hatayama, H.; Kato, J.; Akashi, G.; Hirai, Y.; Inoue, A.

2006-02-01

Several lasers have been used for clinical treatment in dentistry. Among them, diode lasers are attractive because of their compactness compared with other laser sources. Near-infrared diode lasers have been practically used for cutting soft tissues. Because they penetrate deep to soft tissues, they cause sufficiently thick coagulation layer. However, they aren't suitable for removal of carious dentin because absorption by components in dentin is low. Recently, a violet diode laser with a wavelength of 405nm has been developed. It will be effective for cavity preparation because dentin contains about 20% of collagen whose absorption coefficient at a violet wavelength is larger than that at a near-infrared wavelength. In this paper, we examined cutting performance of the violet diode laser for dentin. To our knowledge, there have been no previous reports on application of a violet laser to dentin ablation. Bovine teeth were irradiated by continuous wave violet diode laser with output powers in a range from 0.4W to 2.4W. The beam diameter on the sample was about 270μm and an irradiation time was one second. We obtained the crater ablated at more than an output power of 0.8W. The depth of crater ranged from 20μm at 0.8W to 90μm at 2.4W. Furthermore, the beam spot with an output power of 1.7W was scanned at a speed of 1mm/second corresponding to movement of a dentist's hand in clinical treatment. Grooves with the depth of more than 50μm were also obtained. From these findings, the violet diode laser has good potential for cavity preparation. Therefore, the violet diode laser may become an effective tool for cavity preparation.

Evaluation of the Diode laser (810nm, 980 nm) on color change of teeth after external bleaching.

PubMed

Kiomars, Nazanin; Azarpour, Pouneh; Mirzaei, Mansooreh; Hashemi Kamangar, Sedighe Sadat; Kharazifard, Mohammad Javad; Chiniforush, Nasim

2016-12-30

Subject and aim: The aim of this study was to evaluate the efficiency of diode laser-activated bleaching systems for color change of teeth. Materials & Methods: 40 premolars with intact enamel surfaces were selected for five external bleaching protocols (n=8). Two different wavelengths of diode laser (810 and 980 nm) with two different hydrogen peroxide concentrations (30% and 46%) were selected for laser bleaching. Group 1 received bleaching (Heydent- Germany) with a 810 nm diode laser; Group 2 received bleaching (Heydent- Germany) with a 980 nm diode laser; Group 3 received bleaching (laser white*20- Biolase) with a 810 nm diode laser; Group 4 received bleaching (laser white*20- Biolase) with a 980 nm diode laser, with an output power of 1.5 W, in continuous wave (cw) mode for each irradiation. Group 5 as control group received 40% hydrogen peroxide (Opalescence Boost, Ultradent-USA) with no light activation. The color of teeth was scored at baseline and 1 week after bleaching with spectrophotometer. Color change data on the CIEL*a*b* system were analyzed statistically by the one-way ANOVA and Tukey's HSD test. Results: All the bleaching techniques resulted in shade change. According to ΔE values, all techniques were effective to bleach the teeth (ΔE ≥ 3). Statistically significant differences were detected among bleaching protocols (p=0.06). Regarding shade change values expressed as ΔL*, Δa*, Δb*, ΔE*, laser bleached groups were no statistically different with each other (p>0.05). Conclusion: Bleaching with different wavelengths of diode laser resulted in the same results.

CO2 and diode laser for excisional biopsies of oral mucosal lesions. A pilot study evaluating clinical and histopathological parameters.

PubMed

Suter, Valérie G A; Altermatt, Hans Jörg; Sendi, Pedram; Mettraux, Gérald; Bornstein, Michael M

2010-01-01

The present pilot study evaluates the histopathological characteristics and suitability of CO2 and diode lasers for performing excisional biopsies in the buccal mucosa with special emphasis on the extent of the thermal damage zone created. 15 patients agreed to undergo surgical removal of their fibrous hyperplasias with a laser. These patients were randomly assigned to one diode or two CO2 laser groups. The CO2 laser was used in a continuous wave mode (cw) with a power of 5 W (Watts), and in a pulsed char-free mode (cf). Power settings for the diode laser were 5.12 W in a pulsed mode. The thermal damage zone of the three lasers and intraoperative and postoperative complications were assessed and compared. The collateral thermal damage zone on the borders of the excisional biopsies was significantly smaller with the CO, laser for both settings tested compared to the diode laser regarding values in pm or histopathological index scores. The only intraoperative complication encountered was bleeding, which had to be controlled with electrocauterization. No postoperative complications occurred in any of the three groups. The CO2 laser seems to be appropriate for excisional biopsies of benign oral mucosal lesions. The CO2 laser offers clear advantages in terms of smaller thermal damage zones over the diode laser. More study participants are needed to demonstrate potential differences between the two different CO2 laser settings tested.

Investigation of continuous wave and pulsed laser performance based on Nd3+:Gd0.6Y1.4SiO5 crystal

NASA Astrophysics Data System (ADS)

Feng, Chao; Liu, Zhaojun; Cong, Zhenhua; Shen, Hongbin; Li, Yongfu; Wang, Qingpu; Fang, Jiaxiong; Xu, Xiaodong; Xu, Jun; Zhang, Xingyu

2015-12-01

We systematically investigated a laser diode (LD) pumped Nd:GYSO (Nd3+:Gd0.6Y1.4SiO5) laser. The output power of the continuous wave laser was as high as 3.5 W with a slope efficiency of 31.8%. In the Q-switched operation; the laser exhibited dual-wavelengths output (1073.6 nm and 1074.7 nm) synchronously with a Cr4+:YAG as the saturable absorber (SA). Additionally, a passively mode-locked laser was demonstrated using a semiconductor SA mirror with a maximum average output power of 510 mW at a central wavelength of 1074 nm, while the pulse width of the laser was as short as 5 ps. Our experiment proved that the Nd:GYSO mixed crystal was a promising material for a solid-state laser.

Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasers

NASA Astrophysics Data System (ADS)

Winterfeldt, M.; Crump, P.; Wenzel, H.; Erbert, G.; Tränkle, G.

2014-08-01

GaAs-based broad-area diode lasers are needed with improved lateral beam parameter product (BPPlat) at high power. An experimental study of the factors limiting BPPlat is therefore presented, using extreme double-asymmetric (EDAS) vertical structures emitting at 910 nm. Continuous wave, pulsed and polarization-resolved measurements are presented and compared to thermal simulation. The importance of thermal and packaging-induced effects is determined by comparing junction -up and -down devices. Process factors are clarified by comparing diodes with and without index-guiding trenches. We show that in all cases studied, BPPlat is limited by a non-thermal BPP ground-level and a thermal BPP, which depends linearly on self-heating. Measurements as a function of pulse width confirm that self-heating rather than bias-level dominates. Diodes without trenches show low BPP ground-level, and a thermal BPP which depends strongly on mounting, due to changes in the temperature profile. The additional lateral guiding in diodes with trenches strongly increases the BPP ground-level, but optically isolates the stripe from the device edges, suppressing the influence of the thermal profile, leading to a BPP-slope that is low and independent of mounting. Trenches are also shown to initiate strain fields that cause parasitic TM-polarized emission with large BPPlat, whose influence on total BPPlat remains small, provided the overall polarization purity is >95%.

Properties and Frequency Conversion of High-Brightness Diode-Laser Systems

NASA Astrophysics Data System (ADS)

Boller, Klaus-Jochen; Beier, Bernard; Wallenstein, Richard

An overview of recent developments in the field of high-power, high-brightness diode-lasers, and the optically nonlinear conversion of their output into other wavelength ranges, is given. We describe the generation of continuous-wave (CW) laser beams at power levels of several hundreds of milliwatts to several watts with near-perfect spatial and spectral properties using Master-Oscillator Power-Amplifier (MOPA) systems. With single- or double-stage systems, using amplifiers of tapered or rectangular geometry, up to 2.85 W high-brightness radiation is generated at wavelengths around 810nm with AlGaAs diodes. Even higher powers, up to 5.2W of single-frequency and high spatial quality beams at 925nm, are obtained with InGaAs diodes. We describe the basic properties of the oscillators and amplifiers used. A strict proof-of-quality for the diode radiation is provided by direct and efficient nonlinear optical conversion of the diode MOPA output into other wavelength ranges. We review recent experiments with the highest power levels obtained so far by direct frequency doubling of diode radiation. In these experiments, 100mW single-frequency ultraviolet light at 403nm was generated, as well as 1W of single-frequency blue radiation at 465nm. Nonlinear conversion of diode radiation into widely tunable infrared radiation has recently yielded record values. We review the efficient generation of widely tunable single-frequency radiation in the infrared with diode-pumped Optical Parametric Oscillators (OPOs). With this system, single-frequency output radiation with powers of more than 0.5W was generated, widely tunable around wavelengths of 2.1,m and 1.65,m and with excellent spectral and spatial quality. These developments are clear indicators of recent advances in the field of high-brightness diode-MOPA systems, and may emphasize their future central importance for applications within a vast range of optical wavelengths.

Comment on 'Power loss in open cavity diodes and a modified Child-Langmuir law' [Phys. Plasmas 12, 093102 (2005)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swanekamp, S. B.; Ottinger, P. F.

In this Comment, it is shown that no modification of the Child-Langmuir law [Phys. Rev.32, 492 (1911); Phys. Rev. 2, 450 (1913)] is necessary to treat the space-charge-limited flow from a diode with an open boundary as reported in Phys. Plasmas 12, 093102 (2005). The open boundary condition in their simulations can be represented by a voltage source and a resistor whose value is the vacuum-wave impedance of the opening. The diode can be represented as a variable resistor whose value depends on the voltage drop across the diode (as measured by the line integral of E across the diodemore » gap). This is a simple voltage-divider circuit whose analysis shows that the real diode voltage drops as the vacuum-wave impedance increases. Furthermore, it is shown that in equilibrium, the voltage drop between the anode and cathode is independent of the path chosen for the line integral of the electric field so that E=-{nabla}{phi} is valid. In this case, the equations of electrostatics are applicable. This clearly demonstrates that the electric field is electrostatic and static fields DO NOT RADIATE. It is shown that the diode voltage drops as the vacuum wave impedance increases and the current drops according to the Child-Langmuir law. Therefore, the observed drop in circuit current can be explained by a real drop in voltage across the diode and not an effective drop as claimed by the authors.« less

Rectification of Lamb wave propagation in thin plates with piezo-dielectric periodic structures

NASA Astrophysics Data System (ADS)

Iwasaki, Yuhei; Tsuruta, Kenji; Ishikawa, Atsushi

2016-07-01

Based on a heterostructured plate consisting of piezoelectric-ceramic/epoxy-resin composites with different periodicities, we design a novel acoustic diode for the symmetrical/asymmetrical (S/A) mode of Lamb wave at audible ranges. The acoustic diode is constructed with two parts, i.e., the mode conversion part and the mode selection part, and the mode conversion mechanism at the interface is applied to the mode hybridization from S to S+A and for the mode conversion from A to S. The phonon band structures for each part are calculated and optimized so that the mode selection is realized for a specific mode at the junction. Finite-element simulations prove that the proposed acoustic diode achieves efficient rectification at audio frequency ranges for both S and A mode incidences of the Lamb wave.

Continuous-Wave and Actively Q-Switched Diode-Pumped Er:LuAG Ring Laser at 1650 nm

NASA Astrophysics Data System (ADS)

Tong-Yu, Dai; Xu-Guang, Xu; Lin, Ju; Jing, Wu; Zhen-Guo, Zhang; Bao-Quan, Yao; Ye, Zhang

2016-06-01

Not Available Supported by the National Natural Science Foundation of China under Grant Nos 61308009 and 61405047, the China Postdoctoral Science Foundation Funded Project under Grant No 2013M540288, the Fundamental Research Funds for the Central Universities under Grant Nos HIT.NSRIF.2014044 and HIT.NSRIF.2015042, the Science Fund for Outstanding Youths of Heilongjiang Province under Grant No JQ201310, and the Heilongjiang Postdoctoral Science Foundation Funded Project under Grant No LBH-Z14085.

Continuous-wave laser at 440 nm based on frequency-doubled diode-pumped Nd:GdVO(4) crystal.

PubMed

Castaing, Marc; Balembois, François; Georges, Patrick

2008-09-01

We present for the first time, to the best of our knowledge, a frequency-doubled Nd:GdVO(4) laser operating in a cw on the pure three-level laser line at 880 nm. We obtained 300 mW at 440 nm for 23 W of incident pump power at 808 nm. Moreover, with a 25% output coupler we obtained a cw power of 1.9 W at the fundamental wavelength at 880 nm.

A continuous-wave, widely tunable, intra-cavity, singly resonant, magnesium-doped, periodically poled lithium niobate optical parametric oscillator

NASA Astrophysics Data System (ADS)

Li, Z. P.; Duan, Y. M.; Wu, K. R.; Zhang, G.; Zhu, H. Y.; Wang, X. L.; Chen, Y. H.; Xue, Z. Q.; Lin, Q.; Song, G. C.; Su, H.

2013-05-01

We report a continuous-wave (CW), intra-cavity singly resonant optical parametric oscillator (OPO), based on periodically poled MgO:LiNbO3 pumped by a diode-end-pumped CW Nd:YVO4 laser, and calculate the gain of optical parametric amplification as a function of pump beam waist (at 1064 nm) in the singly resonant OPO (SRO) cavity, to balance the mode-matching and the intensity for the higher gain of a signal wave in the operation of the SRO. In order to achieve maximum gain, we use a convex lens to limit the 1064 nm beam waist. In the experiment, a tunable signal output from 1492 to 1614 nm and an idler output from 3122 to 3709 nm are obtained. For an 808 nm pump power of 11.5 W, a maximum signal output power of up to 2.48 W at 1586 nm and an idler output power of 1.1 W at 3232 nm are achieved with a total optical-to-optical conversion efficiency of 31%.

Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

NASA Astrophysics Data System (ADS)

Eshghi, M. J.; Majdabadi, A.; Koohian, A.

2017-01-01

In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

Diode-side-pumped 131 W, 1319 nm single-wavelength cw Nd:YAG laser.

PubMed

Haiyong, Zhu; Ge, Zhang; Chenghui, Huang; Yong, Wei; Lingxiong, Huang; Jing, Chen; Weidong, Chen; Zhenqiang, Chen

2007-01-20

A diode-side-pumped high-power 1319 nm single-wavelength Nd:YAG continuous wave (cw) laser is described. Through reasonable coating design of the cavity mirrors, the 1064 nm strongest line as well as the 1338 nm one have been successfully suppressed. The laser output powers corresponding to four groups of different output couplers operating at 1319 nm single wavelength have been compared. The output coupler with the transmission T=5.3% has the highest output power, and a 131 W cw output power was achieved at the pumping power of 555 W. The optical-optical conversion efficiency is 23.6%, and the slope efficiency is 46%. The output power is higher than the total output power of the dual-wavelength laser operating at 1319 nm and 1338 nm in the experiment.

Diode-end-pumped Ho, Pr:LiLuF₄ bulk laser at 2.95  μm.

PubMed

Nie, Hongkun; Zhang, Peixiong; Zhang, Baitao; Yang, Kejian; Zhang, Lianhan; Li, Tao; Zhang, Shuaiyi; Xu, Jianqiu; Hang, Yin; He, Jingliang

2017-02-15

A diode-end-pumped continuous-wave (CW) and passively Q-switched Ho, Pr:LiLuF₄ (Ho, Pr:LLF) laser operation at 2.95 μm was demonstrated for the first time, to the best of our knowledge. The maximum CW output power was 172 mW. By using a monolayer graphene as the saturable absorber, the passively Q-switched operation was realized, in which regimes with the highest output power, the shortest pulse duration, and the maximum repetition rate were determined to be 88 mW, 937.5 ns, and 55.7 kHz, respectively. The laser beam quality factor M² at the maximum CW output power were measured to be Mx2=1.48 and My2=1.47.

Transient transfection of mammalian cells using a violet diode laser

NASA Astrophysics Data System (ADS)

Torres-Mapa, Maria Leilani; Angus, Liselotte; Ploschner, Martin; Dholakia, Kishan; Gunn-Moore, Frank J.

2010-07-01

We demonstrate the first use of the violet diode laser for transient mammalian cell transfection. In contrast to previous studies, which showed the generation of stable cell lines over a few weeks, we develop a methodology to transiently transfect cells with an efficiency of up to ~40%. Chinese hamster ovary (CHO-K1) and human embryonic kidney (HEK293) cells are exposed to a tightly focused 405-nm laser in the presence of plasmid DNA encoding for a mitochondrial targeted red fluorescent protein. We report transfection efficiencies as a function of laser power and exposure time for our system. We also show, for the first time, that a continuous wave laser source can be successfully applied to selective gene silencing experiments using small interfering RNA. This work is a major step towards an inexpensive and portable phototransfection system.

High-power continuous-wave mid-infrared radiation generated by difference frequency mixing of diode-laser-seeded fiber amplifiers and its application to dual-beam spectroscopy

NASA Technical Reports Server (NTRS)

Lancaster, D. G.; Richter, D.; Curl, R. F.; Tittel, F. K.; Goldberg, L.; Koplow, J.

1999-01-01

We report the generation of up to 0.7 mW of narrow-linewidth (<60-MHz) radiation at 3.3 micrometers by difference frequency mixing of a Nd:YAG-seeded 1.6-W Yb fiber amplifier and a 1.5-micrometers diode-laser-seeded 0.6-W Er/Yb fiber amplifier in periodically poled LiNbO3. A conversion efficiency of 0.09%/W (0.47 mWW-2 cm-1) was achieved. A room-air CH4 spectrum acquired with a compact 80-m multipass cell and a dual-beam spectroscopic configuration indicates an absorption sensitivity of +/-2.8 x 10(-5) (+/-1 sigma), corresponding to a sub-parts-in-10(9) (ppb) CH4 sensitivity (0.8 ppb).

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

NASA Astrophysics Data System (ADS)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Simultaneous tri-wavelength laser operation at 916, 1086, and 1089 nm of diode-pumped Nd:LuVO4 crystal

NASA Astrophysics Data System (ADS)

Shen, Bingjun; Jin, Lihong; Zhang, Jiajia; Tian, Jian

2016-09-01

We report a diode-pumped continuous-wave tri-wavelength Nd:LuVO4 laser operating at 916, 1086, and 1089 nm. A theoretical analysis has been introduced to determine the threshold conditions for simultaneous tri-wavelength laser operation. Using a T-shaped cavity, we realized efficient tri-wavelength operation at 4F3/2  →  4I9/2 and 4F3/2  →  4I11/2 transitions for Nd:LuVO4 crystal, simultaneously. The maximum output power was 2.8 W, which included 916, 1086, and 1089 nm, and the optical conversion efficiency was 15.1%. To our knowledge, this is the first work that realizes simultaneous tri-wavelength Nd:LuVO4 laser operation.

Sub-nanosecond periodically poled lithium niobate optical parametric generator and amplifier pumped by an actively Q-switched diode-pumped Nd:YAG microlaser

NASA Astrophysics Data System (ADS)

Liu, L.; Wang, H. Y.; Ning, Y.; Shen, C.; Si, L.; Yang, Y.; Bao, Q. L.; Ren, G.

2017-05-01

A sub-nanosecond seeded optical parametric generator (OPG) based on magnesium oxide-doped periodically poled lithium niobate (MgO:PPLN) crystal is presented. Pumped by an actively Q-switched diode-pumped 1 kHz, 1064 nm, Nd:YAG microlaser and seeded with a low power distributed feedback (DFB) diode continuous-wave (CW) laser, the OPG generated an output energy of 41.4 µJ and 681 ps pulse duration for the signal at 1652.4 nm, achieving a quantum conversion efficiency of 61.2% and a slope efficiency of 41.8%. Signal tuning was achieved from 1651.0 to 1652.4 nm by tuning the seed-laser current. The FWHM of the signal spectrum was approximately from 35 nm to 0.5 nm by injection seed laser. The SHG doubled the frequency of OPG signal to produce a output energy of 12 µJ with the energy conversion efficiency of 29.0% and tunanble wavelength near 826 nm.

Monolithic all-fiber repetition-rate tunable gain-switched single-frequency Yb-doped fiber laser.

PubMed

Hou, Yubin; Zhang, Qian; Qi, Shuxian; Feng, Xian; Wang, Pu

2016-12-12

We report a monolithic gain-switched single-frequency Yb-doped fiber laser with widely tunable repetition rate. The single-frequency laser operation is realized by using an Yb-doped distributed Bragg reflection (DBR) fiber cavity, which is pumped by a commercial-available laser diode (LD) at 974 nm. The LD is electronically modulated by the driving current and the diode output contains both continuous wave (CW) and pulsed components. The CW component is set just below the threshold of the single-frequency fiber laser for reducing the requirement of the pump pulse energy. Above the threshold, the gain-switched oscillation is trigged by the pulsed component of the diode. Single-frequency pulsed laser output is achieved at 1.063 μm with a pulse duration of ~150 ns and a linewidth of 14 MHz. The repetition rate of the laser output can be tuned between 10 kHz and 400 kHz by tuning the electronic trigger signal. This kind of lasers shows potential for the applications in the area of coherent LIDAR etc.

Phase modulation in RF tag

DOEpatents

Carrender, Curtis Lee; Gilbert, Ronald W.

2007-02-20

A radio frequency (RF) communication system employs phase-modulated backscatter signals for RF communication from an RF tag to an interrogator. The interrogator transmits a continuous wave interrogation signal to the RF tag, which based on an information code stored in a memory, phase-modulates the interrogation signal to produce a backscatter response signal that is transmitted back to the interrogator. A phase modulator structure in the RF tag may include a switch coupled between an antenna and a quarter-wavelength stub; and a driver coupled between the memory and a control terminal of the switch. The driver is structured to produce a modulating signal corresponding to the information code, the modulating signal alternately opening and closing the switch to respectively decrease and increase the transmission path taken by the interrogation signal and thereby modulate the phase of the response signal. Alternatively, the phase modulator may include a diode coupled between the antenna and driver. The modulating signal from the driver modulates the capacitance of the diode, which modulates the phase of the response signal reflected by the diode and antenna.

Human papilloma virus lesions of the oral cavity: healing and relapse after treatment with 810-980 nm diode laser.

PubMed

Angiero, Francesca; Buccianti, Alberto; Parma, Luisa; Crippa, Rolando

2015-02-01

This study evaluated the therapeutic efficacy of laser therapy in treating oral human papilloma virus (HPV) lesions. In particular, mode of action, healing, postoperative patient compliance, visual numeric scale (VNS) pain index, and recurrence were analyzed. During 2001-2012, in 170 patients (80 women and 90 men), 174 intraoral and lip HPV lesions were detected and excised by diode laser of different wavelengths (810-980 nm), with an average power of 2.1 W, in continuous wave mode, using 300 to 320 μm optical fibers. In most cases (95.4%), complete healing occurred in the first 30 days. There were no adverse effects and all patients were carefully followed up until complete healing occurred, documenting any complications. There was only one recurrence, which was later treated successfully; the mean VNS pain score was below one. In treating HPV lesions, the diode laser is not only a valuable tool for their eradication but especially it reduces relapses, thanks to the characteristics of the laser light.

Solid State Research

DTIC Science & Technology

1987-01-07

Excimer-Laser Projection Lithography 38 4.5 Observation of Millimeter-Wave Oscillations from Resonant- Tunneling Diodes and Some Theroretical...and SIMOX Circuits 32 4-1 Resonant Tunneling Diode Parameters 41 XI INTRODUCTION 1. SOLID STATE DEVICE RESEARCH Optoelectronic switches have...radiation and reflective optics. Oscillation frequencies as high as 56 GHz have been observed from resonant- tunneling double- barrier diodes. Recent

Soft-tissue injuries from sports activities and traffic accidents--treatment with low-level laser therapy: a multicenter double-blind placebo-controlled clinical study on 132 patients

NASA Astrophysics Data System (ADS)

Simunovic, Zlatko; Trobonjaca, Tatjana

2000-06-01

The aim of current multicenter clinical study was to assess the efficacy of low energy-level laser therapy (LLLT) in the treatment of soft tissue injuries compared to the placebo and classical phyiotherapeutic procedures. This clinical study was conducted in two centers located in Locarno, Switzerland and Opatija, Croatia. Two types of irradiation techniques were used: (1) direct, skin contact technique for treatment of trigger points where IR diode laser 830 nm continuous wave was applied; and (2) scanning technique for irradiation of larger surface area with use of Helium Neon laser 632.8 nm combined with IR diode laser 904 nm pulsed wave. Results were evaluated according to clinical parameters like: hematoma, swelling, heat, pan and loss of function. The findings were statistically analyzed via chi- square test. Results have demonstrated that the recovery process was accelerated in 85 percent of patients treated with LLLT compared to the control group of patients. The results and advantages obtained proved once again the efficacy of LLLT as a new and successful way to treat soft tissue injuries.

Ambient diode laser desorption dielectric barrier discharge ionization mass spectrometry of nonvolatile chemicals.

PubMed

Gilbert-López, Bienvenida; Schilling, Michael; Ahlmann, Norman; Michels, Antje; Hayen, Heiko; Molina-Díaz, Antonio; García-Reyes, Juan F; Franzke, Joachim

2013-03-19

In this work, the combined use of desorption by a continuous wave near-infrared diode laser and ionization by a dielectric barrier discharge-based probe (laser desorption dielectric barrier discharge ionization mass spectrometry (LD-DBDI-MS)) is presented as an ambient ionization method for the mass spectrometric detection of nonvolatile chemicals on surfaces. A separation of desorption and ionization processes could be verified. The use of the diode laser is motivated by its low cost, ease of use, and small size. To achieve an efficient desorption, the glass substrates are coated at the back side with a black point (target point, where the sample is deposited) in order to absorb the energy offered by the diode laser radiation. Subsequent ionization is accomplished by a helium plasmajet generated in the dielectric barrier discharge source. Examples on the application of this approach are shown in both positive and negative ionization modes. A wide variety of multiclass species with low vapor pressure were tested including pesticides, pharmaceuticals and explosives (reserpine, roxithromycin, propazine, prochloraz, spinosad, ampicillin, dicloxacillin, enrofloxacin, tetracycline, oxytetracycline, erythromycin, spinosad, cyclo-1,3,5,7-tetramethylene tetranitrate (HMX), and cyclo-1,3,5-trimethylene trinitramine (RDX)). A comparative evaluation revealed that the use of the laser is advantageous, compared to just heating the substrate surface.

16.7 W 885 nm diode-side-pumped actively Q-switched Nd:YAG/YVO4 intracavity Raman laser at 1176 nm

NASA Astrophysics Data System (ADS)

Jiang, Pengbo; Zhang, Guizhong; Liu, Jian; Ding, Xin; Sheng, Quan; Yu, Xuanyi; Sun, Bing; Shi, Rui; Wu, Liang; Wang, Rui; Yao, Jianquan

2017-11-01

We proposed and experimentally demonstrated the generation of high-power 1176 nm Stokes wave by frequency shifting of a 885 nm diode-side-pumped Nd:YAG laser using a YVO4 crystal in a Z-shaped cavity configuration. Employing the 885 nm diode-side-pumped scheme and the Z-shaped cavity, for the first time to our knowledge, we realized the thermal management effectively, achieving excellent 1176 nm Stokes wave consequently. With an incident pump power of ~190.0 W, a maximum average output power of 16.7 W was obtained at the pulse repetition frequency of 10 kHz. The pulse duration and spectrum linewidth of the Stokes wave at the maximum output power were 20.3 ns and ~0.08 nm, respectively.

Holographic injection locking of a broad area laser diode via a photorefractive thin-film device.

PubMed

van Voorst, P D; de Wit, M R; Offerhaus, H L; Tay, S; Thomas, J; Peyghambarian, N; Boller, K-J

2007-12-24

We demonstrate locking of a high power broad area laser diode to a single frequency using holographic feedback from a photorefractive polymer thin-film device for the first time. A four-wave mixing setup is used to generate feedback for the broad area diode at the wavelength of the single frequency source (Ti:Sapphire laser) while the spatial distribution adapts to the preferred profile of the broad area diode. The result is an injection-locked broad area diode emitting with a linewidth comparable to the Ti:Sapphire laser.

Microwave device investigations

NASA Technical Reports Server (NTRS)

Choudhury, K. K. D.; Haddad, G. I.; Kwok, S. P.; Masnari, N. A.; Trew, R. J.

1972-01-01

Materials, devices and novel schemes for generation, amplification and detection of microwave and millimeter wave energy are studied. Considered are: (1) Schottky-barrier microwave devices; (2) intermodulation products in IMPATT diode amplifiers; and (3) harmonic generation using Read diode varactors.

Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

PubMed

Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

2011-10-10

We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jijun; Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology; Akimoto, Ryoichi, E-mail: r-akimoto@aist.go.jp

2015-10-19

Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 Vmore » are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.« less

Noninvasive, low-noise, fast imaging of blood volume and deoxygenation changes in muscles using light-emitting diode continuous-wave imager

NASA Astrophysics Data System (ADS)

Lin, Yuanqing; Lech, Gwen; Nioka, Shoko; Intes, Xavier; Chance, Britton

2002-08-01

This article focuses on optimizing the signal to noise ratio (SNR) of a three-wavelength light-emitting diode (LED) near-infrared continuous-wave (cw) imager and its application to in vivo muscle metabolism measurement. The shot-noise limited SNR is derived and calculated to be 2 x104 for the physiological blood concentrations of muscle. Aiming at shot-noise limited SNR performance and fast imaging, we utilize sample and hold circuits to reduce high-frequency noise. These circuits have also been designed to be parallel integrating, through which SNR of 2 x103 and 2 Hz imaging acquisition rate have been achieved when the probe is placed on a muscle model. The noise corresponds to 2 x10-4 optical density error, which suggests an in vitro resolution of 15. 4 nM blood volume and 46.8 nM deoxygenation changes. A 48 dB digital gain control circuit with 256 steps is employed to enlarge the dynamic range of the imager. We utilize cuff ischemia as a living model demonstration and its results are reported. The instrument is applied during exercise to measure the changes of blood volume and deoxygenation, which provides important information about muscle metabolism. We find that the primary source of noise encountered during exercise experiment is from the random motion of muscle. The results demonstrate that the LED cw imager is ideal for the noninvasive study of muscle metabolism.

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

NASA Technical Reports Server (NTRS)

Boric-Lubecke, Olga; Pan, Dee-Son; Itoh, Tatsuo

1995-01-01

Connecting several tunneling diodes in series shows promise as a method for increasing the output power of these devices as millimeter-wave oscillators. However, due to the negative differential resistance (NDR) region in the dc I-V curve of a single tunneling diode, a circuit using several devices connected in series, and biased simultaneously in the NDR region, is dc unstable. Because of this instability, an oscillator with several tunneling diodes in series has a demanding excitation condition. Excitation using an externally applied RF signal is one approach to solving this problem. This is experimentally demonstrated using an RF source, both with frequency close to as well as with frequency considerably lower than the oscillation frequency. Excitation by an RF (radio frequency) source with a frequency as low as one sixth of the oscillation frequency was demonstrated in a proof-of-principle experiment at 2 GHz, for an oscillator with two tunnel diodes connected in series. Strong harmonics of the oscillation signal were generated as a result of the highly nonlinear dc I-V curve of the tunnel diode and a large signal oscillator design. Third harmonic output power comparable to that of the fundamental was observed in one oscillator circuit. If submillimeter wave resonant-tunneling diodes (RTD's) are used instead of tunnel diodes, this harmonic output may be useful for generating signals at frequencies well into the terahertz range.

A study of the feasibility and performance of an active/passive imager using silicon focal plane arrays and incoherent continuous wave laser diodes

NASA Astrophysics Data System (ADS)

Vollmerhausen, Richard H.

This dissertation describes an active/passive imager (API) that provides reliable, nighttime, target acquisition in a man-portable package with effective visual range of about 4 kilometers. The reflective imagery is easier to interpret than currently used thermal imagery. Also, in the active mode, the API provides performance equivalent to the big-aperture, thermal systems used on weapons platforms like tanks and attack helicopters. This dissertation describes the research needed to demonstrate both the feasibility and utility of the API. Part of the research describes implementation of a silicon focal plane array (SFPA) capable of both active and passive imaging. The passive imaging mode exceeds the nighttime performance of currently fielded, man-portable sensors. Further, when scene illumination is insufficient for passive imaging, the low dark current of SFPA makes it possible to use continuous wave laser diodes (CWLD) to add an active imaging mode. CWLD have advantages of size, efficiency, and improved eye safety when compared to high peak-power diodes. Because of the improved eye safety, the API provides user-demanded features like video output and extended range gates in the active as well as passive imaging modes. Like any other night vision device, the API depends on natural illumination of the scene for passive operation. Although it has been known for decades that "starlight" illumination is actually from diffuse airglow emissions, the research described in this dissertation provides the first estimates of the global and temporal variation of ground illumination due to airglow. A third related element of the current research establishes the impact of atmospheric aerosols on API performance. We know from day experience that atmospheric scattering of sunlight into the imager line-of-sight can blind the imager and drastically degrade performance. Atmospheric scattering of sunlight is extensively covered in the literature. However, previous literature did not cover the impact of atmospheric scattering when the target is diffusely illuminated by airglow.

Topics in the optimization of millimeter-wave mixers

NASA Technical Reports Server (NTRS)

Siegel, P. H.; Kerr, A. R.; Hwang, W.

1984-01-01

A user oriented computer program for the analysis of single-ended Schottky diode mixers is described. The program is used to compute the performance of a 140 to 220 GHz mixer and excellent agreement with measurements at 150 and 180 GHz is obtained. A sensitivity analysis indicates the importance of various diode and mount characteristics on the mixer performance. A computer program for the analysis of varactor diode multipliers is described. The diode operates in either the reverse biased varactor mode or with substantial forward current flow where the conversion mechanism is predominantly resistive. A description and analysis of a new H-plane rectangular waveguide transformer is reported. The transformer is made quickly and easily in split-block waveguide using a standard slitting saw. It is particularly suited for use in the millimeter-wave band, replacing conventional electroformed stepped transformers. A theoretical analysis of the transformer is given and good agreement is obtained with measurements made at X-band.

Coherence properties of spontaneous parametric down-conversion pumped by a multi-mode cw diode laser.

PubMed

Kwon, Osung; Ra, Young-Sik; Kim, Yoon-Ho

2009-07-20

Coherence properties of the photon pair generated via spontaneous parametric down-conversion pumped by a multi-mode cw diode laser are studied with a Mach-Zehnder interferometer. Each photon of the pair enters a different input port of the interferometer and the biphoton coherence properties are studied with a two-photon detector placed at one output port. When the photon pair simultaneously enters the interferometer, periodic recurrence of the biphoton de Broglie wave packet is observed, closely resembling the coherence properties of the pump diode laser. With non-zero delays between the photons at the input ports, biphoton interference exhibits the same periodic recurrence but the wave packet shapes are shown to be dependent on both the input delay as well as the interferometer delay. These properties could be useful for building engineered entangled photon sources based on diode laser-pumped spontaneous parametric down-conversion.

High efficiency and broadband acoustic diodes

NASA Astrophysics Data System (ADS)

Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

2018-01-01

Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

On-Chip Power-Combining for High-Power Schottky Diode Based Frequency Multipliers

NASA Technical Reports Server (NTRS)

Siles Perez, Jose Vicente (Inventor); Chattopadhyay, Goutam (Inventor); Lee, Choonsup (Inventor); Schlecht, Erich T. (Inventor); Jung-Kubiak, Cecile D. (Inventor); Mehdi, Imran (Inventor)

2015-01-01

A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.

Rogue waves generation in a left-handed nonlinear transmission line with series varactor diodes

NASA Astrophysics Data System (ADS)

Onana Essama, B. G.; Atangana, J.; Biya Motto, F.; Mokhtari, B.; Cherkaoui Eddeqaqi, N.; Kofane, Timoleon C.

2014-07-01

We investigate the electromagnetic wave behavior and its characterization using collective variables technique. Second-order dispersion, first- and second-order nonlinearities, which strongly act in a left-handed nonlinear transmission line with series varactor diodes, are taken into account. Four frequency ranges have been found. The first one gives the so-called energetic soliton due to a perfect combination of second-order dispersion and first-order nonlinearity. The second frequency range presents a dispersive soliton leading to the collapse of the electromagnetic wave at the third frequency range. But the fourth one shows physical conditions which are able to provoke the appearance of wave trains generation with some particular waves, the rogue waves. Moreover, we demonstrate that the number of rogue waves increases with frequency. The soliton, thereafter, gains a relative stability when second-order nonlinearity comes into play with some specific values in the fourth frequency range. Furthermore, the stability conditions of the electromagnetic wave at high frequencies have been also discussed.

Submillimeter sources for radiometry using high power Indium Phosphide Gunn diode oscillators

NASA Technical Reports Server (NTRS)

Deo, Naresh C.

1990-01-01

A study aimed at developing high frequency millimeter wave and submillimeter wave local oscillator sources in the 60-600 GHz range was conducted. Sources involved both fundamental and harmonic-extraction type Indium Phosphide Gunn diode oscillators as well as varactor multipliers. In particular, a high power balanced-doubler using varactor diodes was developed for 166 GHz. It is capable of handling 100 mW input power, and typically produced 25 mW output power. A high frequency tripler operating at 500 GHz output frequency was also developed and cascaded with the balanced-doubler. A dual-diode InP Gunn diode combiner was used to pump this cascaded multiplier to produce on the order of 0.5 mW at 500 GHz. In addition, considerable development and characterization work on InP Gunn diode oscillators was carried out. Design data and operating characteristics were documented for a very wide range of oscillators. The reliability of InP devices was examined, and packaging techniques to enhance the performance were analyzed. A theoretical study of a new class of high power multipliers was conducted for future applications. The sources developed here find many commercial applications for radio astronomy and remote sensing.

Ultrastructural analysis of root canal dentine irradiated with 980-nm diode laser energy at different parameters.

PubMed

Marchesan, Melissa Andréia; Brugnera-Junior, Aldo; Souza-Gabriel, Aline Evangelista; Correa-Silva, Silvio Rocha; Sousa-Neto, Manoel D

2008-06-01

The purpose of this in vitro study was to investigate using the scanning electron microscope (SEM) the ultrastructural morphological changes of the radicular dentine surface after irradiation with 980-nm diode laser energy at different parameters and angles of incidence. There have been limited reports on the effects of diode laser irradiation at 980 nm on radicular dentin morphology. Seventy-two maxillary canines were sectioned and roots were biomechanically prepared using K3 rotary instruments. The teeth were irrigated with 2 mL of distilled water between files and final irrigation was performed with 10 mL of distilled water. The teeth were then randomly divided into five groups (n = 8 each) according to their diode laser parameters: Group 1: no irradiation (control); group 2: 1.5 W/continuous wave (CW) emission (the manufacturer's parameters); group 3: 1.5 W/100 Hz; group 4: 3 W/CW; and group 5: 3 W/100 Hz. Laser energy was applied with helicoid movements (parallel to the canal walls) for 20 sec. Eight additional teeth for each group were endodontically prepared and split longitudinally and irradiation was applied perpendicularly to the root surface. Statistical analysis showed no difference between the root canal thirds irradiated with the 980-nm diode laser, and similar results between the parameters 1.5 W/CW and 3 W/100 Hz (p > 0.05). When considering different output powers and delivery modes our results showed that changes varied from smear layer removal to dentine fusion.

Power blue and green laser diodes and their applications

NASA Astrophysics Data System (ADS)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Comparative clinical evaluation of the immediate and late analgesic effect of GaAlAs diode lasers of 830 and 660 nm in the treatment of dentine pain: preliminary results

NASA Astrophysics Data System (ADS)

Ladalardo, Thereza C.; Mangabeira Albernaz, Pedro L.; Brugnera, Aldo, Jr.; Zanin, Fatima A. A.; Siqueira, Jose T.; Pinheiro, Antonio L. B.

2002-06-01

In this comparative clinical study, we aimed at evaluating the immediate and late analgesic effect of GaAlAs diode lasers of 660 nm and 830 nm in treatment of dentine pain. We used GaAlAs diode lasers of 660 nm and 830 nm with 35 mW, continuous wave emission, spot size 1 mm2 and a dosage of 4 joules/cm2 applied to the cervical dentine surface. In total 4 treatment sessions were performed at intervals of 7 days in a period of 4 consecutive weeks. A total of 40 teeth treated were divided into two groups comprising 20 teeth each: one group irradiated with a 660 nm wavelength laser, and the other one with a 830 nm wavelength laser. By means of a quantitative visual analogue scale (V.A.S.), we measured the sensitive responses to cold stimulus pre- treatment, and at a follow-up period of 15 and 30 minutes post-treatment in both groups in order to evaluate the immediate analgesic effect. The late effect was evaluated at a follow-up period of 15 and 30 days. Using the GaAlAs diode laser of 660 nm wavelength resulted in better levels of dentine desensitization, at both immediate and late analgesic effect analysis compared with the use of the GaAlAs diode laser of 830 nm wavelength.

Minimal Invasive Approach for Lips Venous Lake Treatment by 980 nm Diode Laser with Emphasis on the Aesthetic Results. А Clinical Series.

PubMed

Voynov, Parvan P; Tomov, Georgi T; Mateva, Nonka G

2016-01-01

A venous lake (VL) is a vascular lesion with common occurrence in many patients, manifested as a dark blue-to-violet compressible papule, caused by dilation of venules. The main reasons for the treatment of VL are aesthetic. The haemorrhaging episodes or impairment of oral normal functions are also under considerations. Treatment of lip VL includes surgical excision, selective photocoagulation, cryotherapy, sclerotherapy and electrodessication. The high-intensity diode laser is an option. The 980 nm diode laser is selectively absorbed by haemoglobin and selectively destroys blood vessels, minimising injury to the surrounding healthy skin. The purpose of this study was to evaluate the effectiveness of diode laser in the treatment of VL lesions with the accent on the postoperative defects and aesthetic results. 35 patients aged 37 to 71 were included in this study. A 980 nm diode laser was used in noncontact mode, under local anaesthesia in continuous wave (2-3W, for 20-60s). All patients received only one procedure. Healing process was completed within 2 to 4 weeks after treatment with no scarring. None of the typical adverse effects were observed in the process of healing. Selective photocoagulation is an effective method for treatment of VL. Lower morbidity, minimal patient discomfort and satisfactory functional and aesthetic results are favourable for patients. To optimise the results and to reduce the adverse effects, basic knowledge on lasers and laser-tissue interactions is requisite.

Highly-reliable laser diodes and modules for spaceborne applications

NASA Astrophysics Data System (ADS)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance.

PubMed

Ma, Yufei; Tong, Yao; He, Ying; Yu, Xin; Tittel, Frank K

2018-01-04

A highly sensitive carbon monoxide (CO) trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS) was demonstrated. A high-power distributed feedback (DFB), continuous wave (CW) 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF), a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL) of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA) coefficient of 1.8 × 10 -5 cm -1 W/√Hz were obtained for the reported CO-QEPAS sensor.

A diode-pumped Tm:CaYAlO4 laser at 1851 nm

NASA Astrophysics Data System (ADS)

Lan, Jinglong; Guan, Xiaofeng; Xu, Bin; Moncorgé, Richard; Xu, Huiying; Cai, Zhiping

2017-07-01

Laser emission at ~1850 nm is of great interest for neural stimulation applications. In this letter, we report on the diode-pumped continuous-wave (CW) and Q-switched (QS) laser operation of Tm:CaYAlO4 at 1851 nm, for the first time to our knowledge. In the CW regime, a maximum output power up to 0.62 W is obtained with a laser slope efficiency of about 18.0%. Using a Cr:ZnSe saturable absorber, QS laser operation is achieved with a maximum average output power of 0.25 W, the narrowest pulse width of 107 ns and the highest repetition rate of 5.85 kHz. The corresponding pulse peak power and pulse energy are about 388 W and 42.8 µJ, respectively. In this Q-switched mode, wavelength tuning is also realized over about 3 nm by slightly tilting the saturable absorber.

High power eye-safe Er3+:YVO4 laser diode-pumped at 976 nm and emitting at 1603 nm

NASA Astrophysics Data System (ADS)

Newburgh, G. A.; Dubinskii, M.

2016-02-01

We report on the performance of an eye-safe laser based on a Er:YVO4 single crystal, diode-pumped at 976 nm (4I15/2-->4I11/2 transition) and operating at 1603 nm (4I13/2-->4I15/2 transition) with good beam quality. A 10 mm long Er3+:YVO4 slab, cut with its c-axis perpendicular to the laser cavity axis, was pumped in σ-polarization and lased in π-polarization. The laser operated in a quasi-continuous wave (Q-CW) regime with nearly 9 W output power, and with a slope efficiency of about 39% with respect to absorbed power. This is believed to be the highest efficiency and highest power achieved from an Er3+:YVO4 laser pumped in the 970-980 nm absorption band.

Tunable CW diode-pumped Tm,Ho:YLiF4 laser operating at or near room temperature

NASA Technical Reports Server (NTRS)

Mcguckin, Brendan T. (Inventor); Menzies, Robert T. (Inventor)

1995-01-01

A conversion efficiency of 42% and slope efficiency of 60% relative to absorbed pump power are obtained from a continuous wave diode-pumped Tm,Ho:YLiF4 laser at 2 microns with output power of 84 mW at a crystal temperature of 275 K. The emission spectrum is etalon tunable over a range of7 nm (16.3/cm) centered on 2.067 microns with fine tuning capability of the transition frequency with crystal temperature at a measured rate of -0.03/(cm)K. The effective emission cross-section is measured to be 5 x 10(exp -21) cm squared. These and other aspects of the laser performance are disclosed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications. Single frequency output and frequency stabilization are achieved using an intracavity etalon in conjunction with an external reference etalon.

High-Power DFB Diode Laser-Based CO-QEPAS Sensor: Optimization and Performance

PubMed Central

Ma, Yufei; Tong, Yao; He, Ying; Yu, Xin

2018-01-01

A highly sensitive carbon monoxide (CO) trace gas sensor based on quartz-enhanced photoacoustic spectroscopy (QEPAS) was demonstrated. A high-power distributed feedback (DFB), continuous wave (CW) 2.33 μm diode laser with an 8.8 mW output power was used as the QEPAS excitation source. By optimizing the modulation depth and adding an optimum micro-resonator, compared to a bare quartz tuning fork (QTF), a 10-fold enhancement of the CO-QEPAS signal amplitude was achieved. When water vapor acting as a vibrational transfer catalyst was added to the target gas, the signal was further increased by a factor of ~7. A minimum detection limit (MDL) of 11.2 ppm and a calculated normalized noise equivalent absorption (NNEA) coefficient of 1.8 × 10−5 cm−1W/√Hz were obtained for the reported CO-QEPAS sensor. PMID:29300310

Vertical cavity surface-emitting semiconductor lasers with injection laser pumping

NASA Astrophysics Data System (ADS)

McDaniel, D. L., Jr.; McInerney, J. G.; Raja, M. Y. A.; Schaus, C. F.; Brueck, S. R. J.

1990-05-01

Continuous-wave GaAs/GaAlAs edge-emitting diode lasers were used to pump GaAs/AlGaAs and InGaAs/AlGaAs vertical cavity surface-emitting lasers (VCSELs) with resonant periodic gain (RPG) at room temperature. Pump threshold as low as 11 mW, output powers as high as 27 mW at 850 nm, and external differential quantum efficiencies of about 70 percent were observed in GaAs/AlGaAs surface -emitters; spectral brightness 22 times that of the pump laser was also observed. Output powers as high as 85 mW at 950 nm and differential quantum efficiencies of up to 58 percent were recorded for the InGaAs surface-emitting laser. This is the highest quasi-CW output power ever reported for any RPG VCSEL, and the first time such a device has been pumped using an injection laser diode.

100 GHz FMCW Radar Module Based on Broadband Schottky-diode Transceiver

NASA Astrophysics Data System (ADS)

Jiang, Shu; Xu, Jinping; Dou, Jiangling; Wang, Wenbo

2018-04-01

We report on a W-band frequency-modulated continuous-wave (FMCW) radar module with fractional bandwidth over 10 %. To improve flatness over large operation bandwidth, the radar module is developed with focus on the 90-101 GHz modular transceiver, for which accurate modeling of Schottky diode in combination with an integrated design method are proposed in this work. Moreover, the nonlinearity compensation approach is introduced to further optimize the range resolution. To verify the design method and RF performance of the radar module, both measurements of critical components and ISAR imaging experiments are performed. The results demonstrate that high resolution in range and azimuth dimensions can be achieved based on the radar module, of which the receiving gain flatness and transmitting power flatness are better than ±1.3 dB and ±0.7 dB over 90 101 GHz, respectively.

Mass removal modes in the laser ablation of silicon by a Q-switched diode-pumped solid-state laser (DPSSL)

NASA Astrophysics Data System (ADS)

Lim, Daniel J.; Ki, Hyungson; Mazumder, Jyoti

2006-06-01

A fundamental study on the Q-switched diode-pumped solid-state laser interaction with silicon was performed both experimentally and numerically. Single pulse drilling experiments were conducted on N-type silicon wafers by varying the laser intensity from 108-109 W cm-2 to investigate how the mass removal mechanism changes depending on the laser intensity. Hole width and depth were measured and surface morphology was studied using scanning electron microscopy. For the numerical model study, Ki et al's self-consistent continuous-wave laser drilling model (2001 J. Phys. D: Appl. Phys. 34 364-72) was modified to treat the solidification phenomenon between successive laser pulses. The model has the capabilities of simulating major interaction physics, such as melt flow, heat transfer, evaporation, homogeneous boiling, multiple reflections and surface evolution. This study presents some interesting results on how the mass removal mode changes as the laser intensity increases.

Diode-pumped 1.5-1.6 μm laser operation in Er³⁺ doped YbAl₃(BO₃)₄ microchip.

PubMed

Chen, Yujin; Lin, Yanfu; Zou, Yuqi; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2014-06-02

Er3+ doped YbAl3(BO3)4 crystal with large absorption coefficient of 184 cm(-1) at pump wavelength of 976 nm is a promising microchip gain medium of 1.5-1.6 μm laser. End-pumped by a 976 nm diode laser, 1.5-1.6 μm continuous-wave laser with maximum output power of 220 mW and slope efficiency of 8.1% was obtained at incident pump power of 4.54 W in a c-cut 200-μm-thick Er:YbAl3(BO3)4 microchip. When a Co2+:Mg0.4Al2.4O4 crystal was used as the saturable absorber, 1521 nm passively Q-switched pulse laser with about 0.19 μJ energy, 265 ns duration, and 96 kHz repetition rate was realized.

Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

NASA Astrophysics Data System (ADS)

Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

2018-03-01

We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

High performance millimeter-wave microstrip circulators and isolators

NASA Technical Reports Server (NTRS)

Shih, Ming; Pan, J. J.

1990-01-01

Millimeter wave systems, phased array antennas, and high performance components all require wideband circulators (and isolators) to perform diplexing and switching, to improve isolation and Voltage Standing Wave Ratio (VSWR), and to construct IMPATT diode reflection amplifiers. Presently, most of the millimeter-wave circulators and isolators are available in the configurations of waveguide or stripline, both of which suffer from the shortcomings of bulky size/weight, narrow bandwidth, and poor compatibility with monolithic millimeter-wave integrated circuits (MMIC). MMW microstrip circulators/isolators can eliminate or improve these shortcomings. Stub-tuned microstrip circulator configuration were developed utilizing the electromagnetic fields perturbation technique, the adhesion problems of microstrip metallization on new ferrite substrate were overcome, the fabrication, assembly, packaging techniques were improved, and then successfully designed, fabricated a Ka band circulator which has isolation and return loss of greater than 16dB, insertion loss less than 0.7dB. To assess the steady and reliable performance of the circulator, a temperature cycling test was done over the range of -20 to +50 C for 3 continuous cycles and found no significant impact or variation of circulator performance.

Modeling and Simulation of a Laser Deposition Process

DTIC Science & Technology

2007-09-04

LAMP system, the diode laser is used. Material of both powder and substrates is Ti - 6Al - 4V , which is widely used in the aerospace industry. Melt Pool...The laser emits at 808 nm and operates in the continuous wave (CW) mode. The substrates have dimensions of 2.5×2.5×0.4 in. The Ti - 6Al - 4V samples were...irradiated using a laser beam with a beam spot diameter of 2.5 mm. Table 1. Material properties for Ti - 6Al - 4V and main process parameters

Visible GaAs/0.7/P/0.3/ CW heterojunction lasers

NASA Technical Reports Server (NTRS)

Kressel, H.; Olsen, G. H.; Nuese, C. J.

1977-01-01

The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).

A four-diode full-wave ionic current rectifier based on bipolar membranes: overcoming the limit of electrode capacity.

PubMed

Gabrielsson, Erik O; Janson, Per; Tybrandt, Klas; Simon, Daniel T; Berggren, Magnus

2014-08-13

Full-wave rectification of ionic currents is obtained by constructing the typical four-diode bridge out of ion conducting bipolar membranes. Together with conjugated polymer electrodes addressed with alternating current, the bridge allows for generation of a controlled ionic direct current for extended periods of time without the production of toxic species or gas typically arising from electrode side-reactions. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Realization of all-optical switch and diode via Raman gain process using a Kerr field

NASA Astrophysics Data System (ADS)

Abbas, Muqaddar; Qamar, Sajid; Qamar, Shahid

2016-08-01

The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν =0 , however, it behaves as a moving photonic crystal for Δ ν \

Full-wave receiver architecture for the homodyne motion sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haugen, Peter C.; Dallum, Gregory E.; Welsh, Patrick A.

A homodyne motion sensor or detector based on ultra-wideband radar utilizes the entire received waveform through implementation of a voltage boosting receiver. The receiver includes a receiver input and a receiver output. A first diode is connected to the receiver output. A first charge storage capacitor is connected from between the first diode and the receiver output to ground. A second charge storage capacitor is connected between the receiver input and the first diode. A second diode is connected from between the second charge storage capacitor and the first diode to ground. The dual diode receiver performs voltage boosting ofmore » a RF signal received at the receiver input, thereby enhancing receiver sensitivity.« less

Full-wave receiver architecture for the homodyne motion sensor

DOEpatents

Haugen, Peter C; Dallum, Gregory E; Welsh, Patrick A; Romero, Carlos E

2013-11-19

A homodyne motion sensor or detector based on ultra-wideband radar utilizes the entire received waveform through implementation of a voltage boosting receiver. The receiver includes a receiver input and a receiver output. A first diode is connected to the receiver output. A first charge storage capacitor is connected from between the first diode and the receiver output to ground. A second charge storage capacitor is connected between the receiver input and the first diode. A second diode is connected from between the second charge storage capacitor and the first diode to ground. The dual diode receiver performs voltage boosting of a RF signal received at the receiver input, thereby enhancing receiver sensitivity.

Towards a versatile active wavelength converter for all-optical networks based on quasi-phase matched intra-cavity difference-frequency generation.

PubMed

Torregrosa, Adrián J; Maestre, Haroldo; Capmany, Juan

2013-11-18

The availability of reconfigurable all-optical wavelength converters for an efficient and flexible use of optical resources in WDM (wavelength division multiplexing) networks is still lacking at present. We propose and report preliminary results on a versatile active technique for multiple and tunable wavelength conversions in the 1500-1700 nm spectral region. The technique is based on combining broadband quasi-phase matched intra-cavity parametric single-pass difference-frequency generation close to degeneracy in a diode-pumped tunable laser. A periodically poled stoichiometric lithium tantalate crystal is used as the nonlinear medium, with a parametric pump wave generated in a continuous-wave self-injection locked Cr3+:LiCAF tunable laser operating at around 800 nm.

Clinical assessment of diode laser-assisted endoscopic intrasphenoidal vidian neurectomy in the treatment of refractory rhinitis.

PubMed

Lai, Wen-Sen; Cheng, Sheng-Yao; Lin, Yuan-Yung; Yang, Pei-Lin; Lin, Hung-Che; Cheng, Li-Hsiang; Yang, Jinn-Moon; Lee, Jih-Chin

2017-12-01

For chronic rhinitis that is refractory to medical therapy, surgical intervention such as endoscopic vidian neurectomy (VN) can be used to control the intractable symptoms. Lasers can contribute to minimizing the invasiveness of ENT surgery. The aim of this retrospective study is to compare in patients who underwent diode laser-assisted versus traditional VN in terms of operative time, surgical field, quality of life, and postoperative complications. All patients had refractory rhinitis with a poor treatment response to a 6-month trial of corticosteroid nasal sprays and underwent endoscopic VN between November 2006 and September 2015. They were non-randomly allocated into either a cold instrument group or a diode laser-assisted group. Vidian nerve was excised with a 940-nm continuous wave diode laser through a 600-μm silica optical fiber, utilizing a contact mode with the power set at 5 W. A visual analog scale (VAS) was used to grade the severity of the rhinitis symptoms for quality of life assessment before the surgery and 6 months after. Of the 118 patients enrolled in the study, 75 patients underwent cold instrument VN and 43 patients underwent diode laser-assisted VN. Patients in the laser-assisted group had a significantly lower surgical field score and a lower postoperative bleeding rate than those in the cold instrument group. Changes in the VAS were significant in preoperative and postoperative nasal symptoms in each group. The application of diode lasers for vidian nerve transection showed a better surgical field and a lower incidence of postoperative hemorrhage. Recent advancements in laser application and endoscopic technique has made VN safer and more effective. We recommend this surgical approach as a reliable and effective treatment for patients with refractory rhinitis.

Diode laser (808 nm) applied to oral soft tissue lesions: a retrospective study to assess histopathological diagnosis and evaluate physical damage.

PubMed

Angiero, Francesca; Parma, Luisa; Crippa, Rolando; Benedicenti, Stefano

2012-03-01

The diode laser is today widely used in oral pathology to excise lesions; however, some controversy surrounds laser surgery, specifically the accuracy of pathological diagnosis and the control over thermal tissue damage. This study aimed to establish if physical damage induced by the diode laser could affect the histopathological diagnosis and to evaluate the damage caused to the resection margins. Between 2005 and 2010, at S. Gerardo Hospital, Milan, 608 cases of soft tissue lesions localized in the oral cavity (cheek, gingiva, buccal mucosa, tongue, and lips) were examined. Specimens were excised with an 808-nm diode laser, output 1.6-2.7 W, in continuous-wave mode with fibers of 320 μm. Specimens were fixed in 10% buffered formalin solution and examined separately under an optical microscope by two pathologists. In all of the specimens, changes to the epithelium, connective tissue and blood vessels, shape of incision damage, and overall width of modified tissues were evaluated. The data for specimens larger than 3 mm excised with the diode laser were not significant in terms of stromal changes or vascular stasis, while epithelial and stromal changes were significantly more frequent in specimens with a mean size below 3 mm; the diagnosis was not achievable in 46.15%. Our data show that the diode laser is a valid therapeutic instrument for excising oral lesions larger than 3 mm in diameter, but induces serious thermal effects in small lesions (mean size below 3 mm). However, from a clinical standpoint, it is suggested necessary that the specimens taken have in vivo a diameter of at least 5 mm in order to have a reliable reading of the histological sample.

Heterodyne mixing of millimetre electromagnetic waves and sub-THz sound in a semiconductor device

PubMed Central

Heywood, Sarah L.; Glavin, Boris A.; Beardsley, Ryan P.; Akimov, Andrey V.; Carr, Michael W.; Norman, James; Norton, Philip C.; Prime, Brian; Priestley, Nigel; Kent, Anthony J.

2016-01-01

We demonstrate heterodyne mixing of a 94 GHz millimetre wave photonic signal, supplied by a Gunn diode oscillator, with coherent acoustic waves of frequency ~100 GHz, generated by pulsed laser excitation of a semiconductor surface. The mixing takes place in a millimetre wave Schottky diode, and the intermediate frequency electrical signal is in the 1–12 GHz range. The mixing process preserves all the spectral content in the acoustic signal that falls within the intermediate frequency bandwidth. Therefore this technique may find application in high-frequency acoustic spectroscopy measurements, exploiting the nanometre wavelength of sub-THz sound. The result also points the way to exploiting acoustoelectric effects in photonic devices working at sub-THz and THz frequencies, which could provide functionalities at these frequencies, e.g. acoustic wave filtering, that are currently in widespread use at lower (GHz) frequencies. PMID:27477841

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

PubMed

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

Low-cost 420nm blue laser diode for tissue cutting and hemostasis

NASA Astrophysics Data System (ADS)

Linden, Kurt J.

2016-03-01

This paper describes the use of a 420 nm blue laser diode for possible surgery and hemostasis. The optical absorption of blood-containing tissue is strongly determined by the absorption characteristics of blood. Blood is primarily comprised of plasma (yellowish extracellular fluid that is approximately 95% water by volume) and formed elements: red blood cells (RBCs), white blood cells (WBCs) and platelets. The RBCs (hemoglobin) are the most numerous, and due to the spectral absorption characteristics of hemoglobin, the optical absorption of blood has a strong relative maximum value in the 420 nm blue region of the optical spectrum. Small, low-cost laser diodes emitting at 420 nm with tens of watts of continuous wave (CW) optical power are becoming commercially available. Experiments on the use of such laser diodes for tissue cutting with simultaneous hemostasis were carried out and are here described. It was found that 1 mm deep x 1 mm wide cuts can be achieved in red meat at a focused laser power level of 3 W moving at a velocity of ~ 1 mm/s. The peripheral necrosis and thermal damage zone extended over a width of approximately 0.5 mm adjacent to the cuts. Preliminary hemostasis experiments were carried out with fresh equine blood in Tygon tubing, where it was demonstrated that cauterization can occur in regions of intentional partial tubing puncture.

Characterization of resonant tunneling diodes for microwave and millimeter-wave detection

NASA Technical Reports Server (NTRS)

Mehdi, I.; East, J. R.; Haddad, G. I.

1991-01-01

The authors report on the direct detection capabilities of resonant tunneling diodes in the 10-100 GHz range. An open circuit voltage sensitivity of 1750 mV/mW (in Ka-band) was measured. This is higher than the sensitivity of comparatively based commercially available solid-state detectors. The detector properties are a strong function of diode bias and the measured tangential signal sensitivity (-32 dBm at Ka-band with 1-MHz bandwidth) and the dynamic range (25 dB) of the diode are smaller compared to other solid-state detectors.

2.05 µm holmium-doped all-fiber laser diode-pumped at 1.125 µm

NASA Astrophysics Data System (ADS)

Kir'yanov, A. V.; Barmenkov, Y. O.; Villegas Garcia, I.

2017-08-01

We report a holmium-doped all-fiber laser oscillating at ~2.05 µm in continuous wave at direct in-core pumping by a 1.125 µm laser diode. Two types of home-made holmium-doped alumino-germano-silicate fiber (HDF), differentiated in the Ho3+ doping level, were fabricated to implement the laser, for revealing the effect of Ho3+ concentration upon the laser output. Firstly, the fibers were characterized thoroughly from the material and optical viewpoints. Then, laser action with both HDFs was assessed using the simplest Fabry-Perot cavity, assembled by a couple of spectrally adjusted fiber Bragg gratings, also made-in-house. In the best case, when using the lower-doped HDF of proper length (1.4 m), low threshold (~370 mW) and moderate slope efficiency (~13%) of ~2.05 µm lasing were obtained at 1.125 µm diode pumping. Long-term stability, high brightness, low noise, and purely CW operation are shown to be the laser’s attractive features. Yet, when utilizing the heavier-doped HDF, laser output is revealed to be overall worse, with a possible reason being the deteriorating Ho3+ concentration-related effects.

Power and efficiency scaling of diode pumped Cr:LiSAF lasers: 770-1110 nm tuning range and frequency doubling to 387-463 nm.

PubMed

Demirbas, Umit; Baali, Ilyes

2015-10-15

We report significant average power and efficiency scaling of diode-pumped Cr:LiSAF lasers in continuous-wave (cw), cw frequency-doubled, and mode-locked regimes. Four single-emitter broad-area laser diodes around 660 nm were used as the pump source, which provided a total pump power of 7.2 W. To minimize thermal effects, a 20 mm long Cr:LiSAF sample with a relatively low Cr-concentration (0.8%) was used as the gain medium. In cw laser experiments, 2.4 W of output power, a slope efficiency of 50%, and a tuning range covering the 770-1110 nm region were achieved. Intracavity frequency doubling with beta-barium borate (BBO) crystals generated up to 1160 mW of blue power and a record tuning range in the 387-463 nm region. When mode locked with a saturable absorber mirror, the laser produced 195 fs pulses with 580 mW of average power around 820 nm at a 100.3 MHz repetition rate. The optical-to-optical conversion efficiency of the system was 33% in cw, 16% in cw frequency-doubled, and 8% in cw mode-locked regimes.

Comparative in vitro study of tissue welding using a 808 nm diode laser and a Ho:YAG laser.

PubMed

Ott, B; Züger, B J; Erni, D; Banic, A; Schaffner, T; Weber, H P; Frenz, M

2001-01-01

In vitro porcine arteries and veins have been welded end-to-end using either a 808 nm diode laser combined with an indocyanine green enhanced albumin solder, or with a continuous-wave (cw) Ho:YAG laser without biological solder. The vascular stumps were approached to each other over a coronary dilatation catheter in order to obtain a precise alignment and good coaptation. Standard histology revealed for both welding techniques lateral tissue damage between 2 and 3 mm caused by laser-induced heat. Good solder attachment to the tissue was observed by the use of a scanning electron microscope. The vessels soldered with the 808 nm diode laser using albumin solder showed considerably higher tensile strength (1 N compared to 0.3 N) than vessels welded exclusively by Ho:YAG laser radiation. In contrast, leaking pressure (350 +/- 200 mmHg) and bursting pressure (457 +/- 200 mmHg) were found to be independent of the welding technique used. This study demonstrates that fast (total welding time about 2-5 min), stable and tight microvascular anastomosis can be achieved with the use of a dye-enhanced albumin laser soldering technique and an ancillary coronary dilatation catheter.

Lattice-Matched p-GaAsSb/n-InP Backward Diodes Operating at Zero Bias for Millimeter-Wave Applications

NASA Astrophysics Data System (ADS)

Takahashi, Tsuyoshi; Sato, Masaru; Nakasha, Yasuhiro; Hara, Naoki

2012-09-01

Backward diodes consisting of a heterojunction of p-GaAs0.51Sb0.49/n-InP, which was lattice matched to an InP substrate, were fabricated for the first time and investigated for their characteristics. The lattice-matched heterojunction is effective in preventing surface defects after crystal growth of the diodes. The backward diodes indicated a curvature coefficient of -17.6 V-1, which is sufficiently large for zero-bias operation. Voltage sensitivity of 338 V/W was obtained at 94 GHz by use of the circular mesa diode of 2.0 µm diameter. Optimum voltage sensitivity of 1603 V/W was estimated when the input impedance was completely matched with the diodes.

Coherent and noncoherent low-power diodes in clinical practice

NASA Astrophysics Data System (ADS)

Antipa, Ciprian; Pascu, Mihail-Lucian; Stanciulescu, Viorica; Vlaiculescu, Mihaela; Ionescu, Elena; Bordea, Daniel

1997-05-01

Clinical efficacy of the low power laser (LPL) in medical treatments is still not well established. In a double blind, placebo controlled study, we tried to find out first which type of LPL is more efficient, and second if coherence is an important character for clinical efficacy. We treated 1228 patients having different rheumatic diseases, with low power diode, used as follows: A group: IR coherent diode, continuous emission, 3 mW power; B group: IR coherent diode, pulsed emission, output power about 3 mW; C group: IR noncoherent diode continuous emission 9 mW power; D group: both IR diode lasers (continuous or pulsed) and HeNe laser, continuous emission, 2 mW power; E group: placebo laser as control group. The energy dose used for every group was the same, as well as the clinical protocols. The positive results were: 66.16% for A group; 64.06% for B group; 48.87% for C group; 76.66% for D group, and 39.07% for E group. Finally, we showed that LPL is really efficient in the treatment of some rheumatic diseases, especially when red and IR diode laser were used in combination. The type of emission (continuous or pulsed) is not important, but coherence is obviously necessary for clinical efficacy.

Inelastic tunnel diodes

NASA Technical Reports Server (NTRS)

Anderson, L. M. (Inventor)

1984-01-01

Power is extracted from plasmons, photons, or other guided electromagnetic waves at infrared to midultraviolet frequencies by inelastic tunneling in metal-insulator-semiconductor-metal diodes. Inelastic tunneling produces power by absorbing plasmons to pump electrons to higher potential. Specifically, an electron from a semiconductor layer absorbs a plasmon and simultaneously tunnels across an insulator into metal layer which is at higher potential. The diode voltage determines the fraction of energy extracted from the plasmons; any excess is lost to heat.

A user oriented computer program for the analysis of microwave mixers, and a study of the effects of the series inductance and diode capacitance on the performance of some simple mixers

NASA Technical Reports Server (NTRS)

Siegel, P. H.; Kerr, A. R.

1979-01-01

A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.

Power Amplifier Module with 734-mW Continuous Wave Output Power

NASA Technical Reports Server (NTRS)

Fung, King Man; Samoska, Lorene A.; Kangaslahti, Pekka P.; Lamgrigtsen, Bjorn H.; Goldsmith, Paul F.; Lin, Robert H.; Soria, Mary M.; Cooperrider, Joelle T.; Micovic, Moroslav; Kurdoghlian, Ara

2010-01-01

Research findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers-to generate higher frequency signals in nonlinear Schottky diode-based LO sources. By advancing PA technology, the LO system performance can be increased with possible cost reductions compared to current GaAs PAs. High-power, high-efficiency GaN PAs are cross-cutting and can enable more efficient local oscillator distribution systems for new astrophysics and planetary receivers and heterodyne array instruments. It can also allow for a new, electronically scannable solid-state array technology for future Earth science radar instruments and communications platforms.

A broadband LED source in visible to short-wave-infrared wavelengths for spectral tumor diagnostics

NASA Astrophysics Data System (ADS)

Hayashi, Daiyu; van Dongen, Anne Marie; Boerekamp, Jack; Spoor, Sandra; Lucassen, Gerald; Schleipen, Jean

2017-06-01

Various tumor types exhibit the spectral fingerprints in the absorption and reflection spectra in visible and especially in near- to short-wave-infrared wavelength ranges. For the purpose of spectral tumor diagnostics by means of diffuse reflectance spectroscopy, we developed a broadband light emitting diode (LED) source consisting of a blue LED for optical excitation, Lu3Al5O12:Ce3+,Cr3+ luminescent garnet for visible to near infrared emissions, and Bismuth doped GeO2 luminescent glass for near-infrared to short-wave infrared emissions. It emits broad-band light emissions continuously in 470-1600 nm with a spectral gap at 900-1000 nm. In comparison to the currently available broadband light sources like halogen lamps, high-pressure discharge lamps and super continuum lasers, the light sources of this paper has significant advantages for spectral tissue diagnostics in high-spectral stability, improved light coupling to optical fibers, potential in low light source cost and enabling battery-drive.

Bilayer avalanche spin-diode logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien; Fadel, Eric R.

2015-11-15

A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

The millimeter wave super-Schottky diode detector

NASA Technical Reports Server (NTRS)

Silver, A. H.; Pedersen, R. J.; Mccoll, M.; Dickman, R. L.; Wilson, W. J.

1981-01-01

The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.

Strong upconversion from Er3Al5O12 ceramic powders prepared by low temperature direct combustion synthesis

NASA Astrophysics Data System (ADS)

Maciel, Glauco S.; Rakov, Nikifor; Fokine, Michael; Carvalho, Isabel C. S.; Pinheiro, Carlos B.

2006-08-01

Crystalline ceramic powders of Er3Al5O12 were obtained by low temperature direct combustion synthesis. Irradiating the sample with a low-power continuous-wave infrared (1.48μm) diode laser led to ultraviolet, violet, blue, green, and red (380, 410, 456, 495, 525, 550, and 660nm) emissions. The strong upconversion luminescence appeared to the eyes as an intense green color. The presence of efficient four- and three-photon frequency upconversion processes makes this material an excellent candidate for use in photonic devices based on upconverter phosphors.

High single-spatial-mode pulsed power from 980 nm emitting diode lasers

NASA Astrophysics Data System (ADS)

Hempel, Martin; Tomm, Jens W.; Elsaesser, Thomas; Bettiati, Mauro

2012-11-01

Single-spatial-mode pulsed powers as high as 13 W and 20 W in 150 and 50 ns pulses, respectively, are reported for 980 nm emitting lasers. In terms of energy, single-spatial-mode values of up to 2 μJ within 150 ns pulses are shown. In this high-power pulsed operation, the devices shield themselves from facet degradation, being the main degradation source in continuous wave (cw) operation. Our results pave the way towards additional applications while employing available standard devices, which have originally been designed as very reliable cw fiber pumps.

Highly stable, efficient Tm-doped fiber laser—a potential scalpel for low invasive surgery

NASA Astrophysics Data System (ADS)

Michalska, M.; Brojek, W.; Rybak, Z.; Sznelewski, P.; Mamajek, M.; Swiderski, J.

2016-11-01

We report an all-fiber, diode-pumped, continuous-wave Tm3+-doped fiber laser emitting 37.4 W of output power with a slope efficiency as high as 57% with respect to absorbed pump power at 790 nm. The laser operated at ~1.94 µm and the output beam quality factor M 2 was measured to be ~1.2. The output beam was very stable with power fluctuations  <1% measured over 1 h. The laser system is to be implemented as a scalpel for low-invasive soft-tissue surgery.

Thulium fiber laser for the use in low-invasive endoscopic and robotic surgery of soft biological tissues

NASA Astrophysics Data System (ADS)

Michalska, M.; Brojek, W.; Rybak, Z.; Sznelewski, P.; Mamajek, M.; Gogler, S.; Swiderski, J.

2016-12-01

An all-fiber, diode-pumped, continuous-wave Tm3+-doped fiber laser operated at a wavelength of 1.94 μm was developed. 37.4 W of output power with a slope efficiency as high as 57% with respect to absorbed pump power at 790 nm was demonstrated. The laser output beam quality factor M2 was measured to be 1.2. The output beam was very stable with power fluctuations <1% measured over 1 hour. The laser system is to be implemented as a scalpel for surgery of soft biological tissues.

High-repetition-rate widely tunable LiF : \\mathbf{\\mathsf{F}}_\\mathbf{\\mathsf{2}}^{-} color center lasers

NASA Astrophysics Data System (ADS)

Men, Shaojie; Liu, Zhaojun; Cong, Zhenhua; Rao, Han; Zhang, Sasa; Liu, Yang; Zverev, Petr G.; Konyushkin, Vasily A.; Zhang, Xingyu

2016-02-01

High-repetition-rate tunable LiF:\\text{F}2- color center lasers pumped by quasi-continuous-wave diode-side-pumped acousto-optically Q-switched Nd:YAG laser are demonstrated. Littrow-grating and Littman-grating tuning schemes are studied respectively. In the Littrow-grating scheme, the tuning range was 1085 nm to 1275 nm, and the maximal average output power was 275 mW. In the Littman-grating scheme, the tuning range was 1105.5 nm to 1215.5 nm, and the maximal average output power was 135 mW.

Investigation on Nonlinear-Optical Properties of Palm Oil/Silver Nanoparticles

NASA Astrophysics Data System (ADS)

Zamiri, R.; Parvizi, R.; Zakaria, A.; Sadrolhosseini, A. R.; Zamiri, G.; Darroudi, M.; Husin, M. S.

2012-06-01

We have investigated the spatial self phase modulation of palm oil containing silver nanoparticles (palm oil/Ag-NPs). The study carried out using continuous wave diode pumped solid state laser with wavelength of 405 nm and power of 50 mW. The strong spatial self phase modulation patterns were observed that suggest the palm oil/Ag-NPs have a relatively large nonlinear refractive index. The obtained values of nonlinear refractive index were increased with the increment in the volume fractions. The observed experimental patterns were also theoretically modeled which are in good agreement with experimental results.

Effect of scanning speed on continuous wave laser scribing of metal thin films: theory and experiment

NASA Astrophysics Data System (ADS)

Shahbazi, AmirHossein; Koohian, Ata; Madanipour, Khosro

2017-01-01

In this paper continuous wave laser scribing of the metal thin films have been investigated theoretically and experimentally. A formulation is presented based on parameters like beam power, spot size, scanning speed and fluence thresholds. The role of speed on the transient temperature and tracks width is studied numerically. By using two frameworks of pulsed laser ablation of thin films and laser printing on paper, the relation between ablation width and scanning speed has been derived. Furthermore, various speeds of the focused 450 nm continuous laser diode with an elliptical beam spot applied to a 290 nm copper thin film coated on glass, experimentally. The beam power was 150 mW after spatial filtering. By fitting the theoretical formulation to the experimental data, the threshold fluence and energy were obtained to be 13.2 J mm-2 and 414~μ J respectively. An anticipated theoretical parameter named equilibrium~border was verified experimentally. It shows that in the scribing of the 290 nm copper thin film, at a distance where the intensity reaches about 1/e of its maximum value, the absorbed fluence on the surface is equal to zero. Therefore the application of continuous laser in metal thin film ablation has different mechanism from pulsed laser drilling and beam scanning in printers.

Efficient frequency doubler of 1560 nm laser based on a semi-monolithic resonant cavity with a PPKTP crystal

NASA Astrophysics Data System (ADS)

Wang, Junmin; Zhang, Kong; Ge, Yulong; Guo, Shanlong

2016-06-01

We have demonstrated 1.61 W of 780 nm single-frequency continuous-wave laser output with a semi-monolithic periodically poled potassium titanyl phosphate (PPKTP) crystal doubler pumped by a 2-W erbium-doped fiber amplifier boosted 1560 nm diode laser. The measured maximum doubling efficiency is 77%, and the practical value should be 80% when taking into account the fundamental-wave mode matching efficiency. The measured beam quality factor of 780 nm output, M2, is better than 1.04. Typical root-mean-square fluctuation of 780 nm output is less than 0.5% in 30 minutes. This compact frequency doubler has good mechanical stability, and can be employed for many applications, such as laser cooling and trapping, atomic coherent control, atomic interferometer, and quantum frequency standard with rubidium atoms.

Quartz enhanced photoacoustic spectroscopy based trace gas sensors using different quartz tuning forks.

PubMed

Ma, Yufei; Yu, Guang; Zhang, Jingbo; Yu, Xin; Sun, Rui; Tittel, Frank K

2015-03-27

A sensitive trace gas sensor platform based on quartz-enhanced photoacoustic spectroscopy (QEPAS) is reported. A 1.395 μm continuous wave (CW), distributed feedback pigtailed diode laser was used as the excitation source and H2O was selected as the target analyte. Two kinds of quartz tuning forks (QTFs) with a resonant frequency (f0) of 30.72 kHz and 38 kHz were employed for the first time as an acoustic wave transducer, respectively for QEPAS instead of a standard QTF with a f0 of 32.768 kHz. The QEPAS sensor performance using the three different QTFs was experimentally investigated and theoretically analyzed. A minimum detection limit of 5.9 ppmv and 4.3 ppmv was achieved for f0 of 32.768 kHz and 30.72 kHz, respectively.

A low-cost fabrication method for sub-millimeter wave GaAs Schottky diode

NASA Astrophysics Data System (ADS)

Jenabi, Sarvenaz; Deslandes, Dominic; Boone, Francois; Charlebois, Serge A.

2017-10-01

In this paper, a submillimeter-wave Schottky diode is designed and simulated. Effect of Schottky layer thickness on cut-off frequency is studied. A novel microfabrication process is proposed and implemented. The presented microfabrication process avoids electron-beam (e-beam) lithography which reduces the cost. Also, this process provides more flexibility in selection of design parameters and allows significant reduction in the device parasitic capacitance. A key feature of the process is that the Schottky contact, the air-bridges, and the transmission lines, are fabricated in a single lift-off step. This process relies on a planarization method that is suitable for trenches of 1-10 μm deep and is tolerant to end-point variations. The fabricated diode is measured and results are compared with simulations. A very good agreement between simulation and measurement results are observed.

Tunable CW diode-pumped Tm,Ho:YLiF4 laser operating at or near room temperature

NASA Technical Reports Server (NTRS)

Mcguckin, Brendan T. (Inventor); Menzies, Robert T. (Inventor)

1993-01-01

A conversion efficiency of 42 percent and slope efficiency of 60 percent relative to absorbed pump power are obtained from a continuous wave diode-pumped Tm,Ho:YLiF4 laser at 2 microns with output power of 84mW at a crystal temperature of 275K. The emission spectrum is etalon tunable over a range of 7nm (16.3 cm(sup -1) centered on 2.067 microns with fine tuning capability of the transition frequency with crystal temperature at a measured rate of -0.03/(cm)K. The effective emission cross-section is measured to be 5 x 10(sup -21) cm squared. These and other aspects of the laser performance are disclosed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications. Single frequency output and frequency stabilization are achieved using an intracavity etalon in conjunction with an external reference etalon.

Discrete multi-wavelength tuning of a continuous wave diode-pumped Nd:GdVO4 laser

NASA Astrophysics Data System (ADS)

Nadimi, Mohammad; Waritanant, Tanant; Major, Arkady

2018-05-01

Discrete multi-wavelength operation of a diode-pumped Nd:GdVO4 laser at four different wavelengths was demonstrated using a single birefringent filter plate. The laser achieved maximum output powers of 5.92 W, 5.66 W, 5.56 W and 3.98 W at 1063.2 nm, 1070.8 nm, 1082.5 nm and 1086.2 nm wavelengths, respectively. To the best of our knowledge, apart from achieving the maximum output powers at ~1071 nm and ~1086 nm and best efficiencies at ~1071 nm, ~1083 nm and ~1086 nm wavelengths for a Nd:GdVO4 laser, this is also the largest number of wavelengths from the 4F3/2  →  4I11/2 transition that was ever obtained in a controlled manner from a single laser setup based on any of the Nd-doped laser crystals.

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerutti, L.; Rodriguez, J.-B.; Madiomanana, K.

We have investigated in detail the material, optical, and lasing properties of innovative GaInSb/AlInSb composite quantum wells (CQWs). The CQWs are confined by AlGaAsSb barrier layers, and a monolayer-thin AlInSb barrier layer has been inserted within the GaInSb QWs in order to achieve lasing emission within the telecom window. High-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopies reveal high structural quality of the samples. Inserting AlInSb layers allows wider QWs, and thus higher gain-material volume and CQW/optical mode overlap. This translates into better laser performances. Near room temperature, a threshold current of 85 mA and an output power of ∼30more » mW/uncoated-facet under continuous wave operation are demonstrated at 1.55 μm with 10 μm × 1 mm laser diodes.« less

Endoluminal laser delivery mode and wavelength effects on varicose veins in an ex vivo model.

PubMed

Massaki, Ane B M N; Kiripolsky, Monika G; Detwiler, Susan P; Goldman, Mitchel P

2013-02-01

Endovenous laser ablation (EVLA) has been shown to be effective for the elimination of saphenous veins and associated reflux. Mechanism is known to be heat related, but precise way in which heat causes vein ablation is not completely known. This study aimed to determine the effects of various endovenous laser wavelengths and delivery modes on ex vivo human vein both macroscopically and microscopically. We also evaluated whether protected-tip fibers, consisting of prototype silica fibers with a metal tube over the distal end, reduced vein wall perforations compared with non-protected-tip fibers. An ex vivo EVLA model with human veins harvested during ambulatory phlebectomy procedures was used. Six laser fiber combinations were tested: 810 nm continuous wave (CW) diode laser with a flat tip fiber, 810 CW diode laser with a protected tip fiber, 1,320 nm pulsed Nd:YAG laser, 1,310 nm CW diode laser, 1,470 nm CW diode laser, and 2,100 nm pulsed Ho:YAG laser. Perforation or full thickness necrosis of a portion of the vein wall was observed in 5/11 (45%), 0/11 (0%), 3/22 (14%), 7/11 (64%), 4/6 (67%), and 5/10 (50%) of cross-sections of veins treated with the 810 nm CW diode laser with a flat tip fiber, the 810 CW diode laser with a protected tip fiber, the 1,320 nm pulsed Nd:YAG laser, the 1,310 nm CW diode laser, the 1,470 nm CW diode laser, and the 2,100 nm pulsed Ho:YAG laser, respectively. Our results have shown that the delivery mode, pulsed Nd:YAG versus CW, may be just as important as the wavelength. Therefore, the 1,310 nm CW laser may not be equivalent to the 1,320 nm pulsed laser. In addition, protected 810 nm fibers may be less likely to yield wall perforations than their non-protected counterparts. Copyright © 2012 Wiley Periodicals, Inc.

Prototype laser-diode-pumped solid state laser transmitters

NASA Technical Reports Server (NTRS)

Kane, Thomas J.; Cheng, Emily A. P.; Wallace, Richard W.

1989-01-01

Monolithic, diode-pumped Nd:YAG ring lasers can provide diffraction-limited, single-frequency, narrow-linewidth, tunable output which is adequate for use as a local oscillator in a coherent communication system. A laser was built which had a linewidth of about 2 kHz, a power of 5 milliwatts, and which was tunable over a range of 30 MHz in a few microseconds. This laser was phase-locked to a second, similar laser. This demonstrates that the powerful technique of heterodyne detection is possible with a diode-pumped laser used as the local oscillator. Laser diode pumping of monolithic Nd:YAG rings can lead to output powers of hundreds of milliwatts from a single laser. A laser was built with a single-mode output of 310 mW. Several lasers can be chained together to sum their power, while maintaining diffraction-limited, single frequency operation. This technique was demonstrated with two lasers, with a total output of 340 mW, and is expected to be practical for up to about ten lasers. Thus with lasers of 310 mW, output of up to 3 W is possible. The chaining technique, if properly engineered, results in redundancy. The technique of resonant external modulation and doubling is designed to efficiently convert the continuous wave, infrared output of our lasers into low duty-cycle pulsed green output. This technique was verified through both computer modeling and experimentation. Further work would be necessary to develop a deliverable system using this technique.

Diode Laser-Assisted Surgical Therapy for Early Treatment of Oral Mucocele in a Newborn Patient: Case Report and Procedures Checklist

PubMed Central

Vitale, Marina Consuelo; Croci, Giorgio Alberto; Paulli, Marco; Carbone, Lorenzo; Gandini, Paola

2018-01-01

Mucocele (also known as ranula or salivary gland mucous cyst) of the newborn is a lesion present on the intraoral cavity, with the potential to interfere with respiration and feeding. In the present report, a case of mucocele in a 4-month female patient has been described. As conventional surgery can be followed by several complications such as intraoperative bleeding, difficulties in wound healing, and maintenance of sterility during surgery, in the present case, the use of diode laser has been planned. A topic anesthesia with lidocaine gel was performed. A diode laser (810 nm wavelength, continuous wave mode, power output of 3 watt, and 0.4 mm diameter fiber optic) was set for excising the lesion. The tip was directed at an angle of 10 to 15°, moving around the base of the lesion with a circular motion. The procedure was completed in 3 minutes. The patient was visited with a follow-up of 2 weeks and 4 months after excision. The intraoral wound healed without complications, and no signs of infection or mass recurrence were noted. The histopathological examination confirmed the diagnosis of mucocele. On the basis of the results of the present case report, the use of diode laser can be easily performed also in a noncompliant newborn patient for successful excision of mucocele lesions, and checklist of clinical procedures has been described. PMID:29854481

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

NASA Astrophysics Data System (ADS)

Sun, Yi; Zhou, Kun; Sun, Qian; Liu, Jianping; Feng, Meixin; Li, Zengcheng; Zhou, Yu; Zhang, Liqun; Li, Deyao; Zhang, Shuming; Ikeda, Masao; Liu, Sheng; Yang, Hui

2016-09-01

Silicon photonics would greatly benefit from efficient, visible on-chip light sources that are electrically driven at room temperature. To fully utilize the benefits of large-scale, low-cost manufacturing foundries, it is highly desirable to grow direct bandgap III-V semiconductor lasers directly on Si. Here, we report the demonstration of a blue-violet (413 nm) InGaN-based laser diode grown directly on Si that operates under continuous-wave current injection at room temperature, with a threshold current density of 4.7 kA cm-2. The heteroepitaxial growth of GaN on Si is confronted with a large mismatch in both the lattice constant and the coefficient of thermal expansion, often resulting in a high density of defects and even microcrack networks. By inserting an Al-composition step-graded AlN/AlGaN multilayer buffer between the Si and GaN, we have not only successfully eliminated crack formation, but also effectively reduced the dislocation density. The result is the realization of a blue-violet InGaN-based laser on Si.

Continuous-wave and passively Q-switched laser performance of Nd:(LaxGd1-x)3Ga5O12 crystal at 1062 nm CW and PQS laser performance of Nd:LaGGG crystal at 1062 nm

NASA Astrophysics Data System (ADS)

Yang, H.; Fu, X.-W.; Jia, Z.-T.; He, J.-L.; Yang, X.-Q.; Zhang, B.-T.; Wang, R.-H.; Liu, X.-M.; Hou, J.; Lou, F.; Wang, Z.-W.; Yang, Y.

2012-10-01

The performance of diode-pumped continuous-wave (CW) and passively Q-switched (PQS) Nd:(LaxGd1-x)3Ga5O12 lasers at 1062 nm were demonstrated for the first time to our knowledge. The highest CW output power of 9.9 W was obtained, corresponding to an optical-to-optical efficiency of 42.9%. For the passive Q-switching operation, when the output coupler of Toc = 27% was adopted, the maximum output power of 3.97 W was obtained by a Cr4+:YAG saturable absorber with the initial transmission of T0 = 89.9%.While at T0 = 81.4% and Toc = 27%, the output power of 2.83 W, with pulse width of 7.4 ns and the repetition rate of 13.87 kHz, was obtained, corresponding to the maximum peak power of 27.6 kW and single pulse energy of 0.2 mJ, respectively.

Test apparatus for locating shorts during assembly of electrical buses

NASA Technical Reports Server (NTRS)

Deboo, G. J.; Devine, D. L. (Inventor)

1981-01-01

A test apparatus is described for locating electrical shorts that is especially suited for use while an electrical circuit is being fabricated or assembled. A ring counter derives input pulses from a square wave oscillator. The outputs of the counter are fed through transistors to an array of light emitting diodes. Each diode is connected to an electrical conductor, such as a bus bar, that is to be tested. In the absence of a short between the electrical conductors the diodes are sequentially illuminated. When a short occurs, a comparator/multivibrator circuit triggers an alarm and stops the oscillator and the sequential energization of the diodes. The two diodes that remain illuminated identify the electrical conductors that are shorted.

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Wildeson, Isaac H.; Colby, Robert; Ewoldt, David A.; Liang, Zhiwen; Zakharov, Dmitri N.; Zaluzec, Nestor J.; García, R. Edwin; Stach, Eric A.; Sands, Timothy D.

2010-08-01

Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth templates via reactive ion etching, eliminating the need for lithographic processes. (In,Ga)N quantum well growth occurs primarily on the six {11¯01} semipolar facets of each of the nanopyramids, while coherent (In,Ga)N quantum dots with heights of up to ˜20 nm are incorporated at the apex by controlling growth conditions. Transmission electron microscopy (TEM) indicates that the (In,Ga)N active regions of the nanopyramid heterostructures are completely dislocation-free. Temperature-dependent continuous-wave photoluminescence of nanopyramid heterostructures yields a peak emission wavelength of 617 nm and 605 nm at 300 K and 4 K, respectively. The peak emission energy varies with increasing temperature with a double S-shaped profile, which is attributed to either the presence of two types of InN-rich features within the nanopyramids or a contribution from the commonly observed yellow defect luminescence close to 300 K. TEM cross-sections reveal continuous planar defects in the (In,Ga)N quantum wells and GaN cladding layers grown at 650-780 °C, present in 38% of the nanopyramid heterostructures. Plan-view TEM of the planar defects confirms that these defects do not terminate within the nanopyramids. During the growth of p-GaN, the structure of the nanopyramid LEDs changed from pyramidal to a partially coalesced film as the thickness requirements for an undepleted p-GaN layer result in nanopyramid impingement. Continuous-wave electroluminescence of nanopyramid LEDs reveals a 45 nm redshift in comparison to a thin-film LED, suggesting higher InN incorporation in the nanopyramid LEDs. These results strongly encourage future investigations of III-nitride nanoheteroepitaxy as an approach for creating efficient long wavelength LEDs.

Prospective study of the 532 nm laser (KTP) versus diode laser 980 nm in the resection of hyperplastic lesions of the oral cavity

PubMed Central

Bargiela-Pérez, Patricia; González-Merchán, Jorge; Díaz-Sánchez, Rosa; Serrera-Figallo, Maria-Angeles; Volland, Gerd; Joergens, Martin; Gutiérrez-Pérez, Jose-Luis

2018-01-01

Background The aim of this study is to evaluate the resection of hyperplastic lesions on the buccal mucosa comparing the 532nm laser (KTP), versus diode 980nm laser, considering pain, scarring, inflammation and drug consumption that occurred postoperatively with each lasers. Material and Methods A prospective study of consecutive series of 20 patients in two groups that presents hyperplastic lesions on the buccal mucosa. The choice of the KTP laser or diode 980nm laser for the surgery was made randomly. The power used was 1.5W in both groups in a continuous wave mode with a 320 μm optical fiber. Parameters of pain, scarring, inflammation and consumption of drugs were recorded by a Numerical Rating Scale and evaluated postoperatively. These recordings were made the day of the surgery, 24 hours after, 14 and 28 days after. Results Pain and inflammation was light - moderate. The consumption of paracetamol was somewhat higher in the diode 980nm laser versus the KTP laser after 24 hours, although data was not statistically significant; significant differences were found after 28 days in regards to pain (p = 0.023) and inflammation (p = 0.023), but always in the absence parameter so we find no pain in both lasers. Scarring in the two types of laser showed no differences along the visits, with not detected scar retractable. Conclusions Although there is a slight histological difference regarding the KTP laser in the oral soft tissues for clinical use, both wavelengths are very suitable for excision of oral fibroma. Key words:Laser surgery, Laser therapy, oral surgery, soft tissue, 980 nm diode laser, 532 nm KTP laser. PMID:29274158

Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

NASA Astrophysics Data System (ADS)

Souto, Jorge; Pura, José Luis; Jiménez, Juan

2017-06-01

In this work we study the catastrophic optical damage (COD) of graded-index separate confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The emphasis is placed on the impact that the nanoscale physical properties have on the operation and degradation of the active layers of these devices. When these laser diodes run in continuous-wave mode with high internal optical power densities, the QW and guide layers can experiment very intense local heating phenomena that lead to device failure. A thermo-mechanical model has been set up to study the mechanism of degradation. This model has been solved by applying finite element methods. A variety of physical factors related to the materials properties, which play a paramount role in the laser degradation process, have been considered. Among these, the reduced thicknesses of the QW and the guides lead to thermal conductivities smaller than the bulk figures, which are further reduced as extended defects develop in these layers. This results in a progressively deteriorating thermal management in the device. To the best of our knowledge, this model for laser diodes is the first one to have taken into account low scale mechanical effects that result in enhanced strengths in the structural layers. Moreover, the consequences of these conflicting size-dependent properties on the thermo-mechanical behaviour on the route to COD are examined. Subsequently, this approach opens the possibility of taking advantage of these properties in order to design robust diode lasers (or other types of power devices) in a controlled manner.

Red and orange laser operation of Pr:KYF4 pumped by a Nd:YAG/LBO laser at 469.1 nm and a InGaN laser diode at 444 nm.

PubMed

Xu, B; Starecki, F; Pabœuf, D; Camy, P; Doualan, J L; Cai, Z P; Braud, A; Moncorgé, R; Goldner, Ph; Bretenaker, F

2013-03-11

We report the basic luminescence properties and the continuous-wave (CW) laser operation of a Pr(3+)-doped KYF(4) single crystal in the Red and Orange spectral regions by using a new pumping scheme. The pump source is an especially developed, compact, slightly tunable and intra-cavity frequency-doubled diode-pumped Nd:YAG laser delivering a CW output power up to about 1.4 W around 469.1 nm. At this pump wavelength, red and orange laser emissions are obtained at about 642.3 and 605.5 nm, with maximum output powers of 11.3 and 1 mW and associated slope efficiencies of 9.3% and 3.4%, with respect to absorbed pump powers, respectively. For comparison, the Pr:KYF(4) crystal is also pumped by a InGaN blue laser diode operating around 444 nm. In this case, the same red and orange lasers are obtained, but with maximum output powers of 7.8 and 2 mW and the associated slope efficiencies of 7 and 5.8%, respectively. Wavelength tuning for the two lasers is demonstrated by slightly tilting the crystal. Orange laser operation and laser wavelength tuning are reported for the first time.

Semiconductor diode laser material and devices with emission in visible region of the spectrum

NASA Technical Reports Server (NTRS)

Ladany, I.; Kressel, H.

1975-01-01

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

PubMed

Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

2017-09-20

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

Biological effects of a semiconductor diode laser on human periodontal ligament fibroblasts

PubMed Central

Choi, Eun-Jeong; Yim, Ju-Young; Koo, Ki-Tae; Seol, Yang-Jo; Lee, Yong-Moo; Ku, Young; Rhyu, In-Chul; Chung, Chong-Pyoung

2010-01-01

Purpose It has been reported that low-level semiconductor diode lasers could enhance the wound healing process. The periodontal ligament is crucial for maintaining the tooth and surrounding tissues in periodontal wound healing. While low-level semiconductor diode lasers have been used in low-level laser therapy, there have been few reports on their effects on periodontal ligament fibroblasts (PDLFs). We performed this study to investigate the biological effects of semiconductor diode lasers on human PDLFs. Methods Human PDLFs were cultured and irradiated with a gallium-aluminum-arsenate (GaAlAs) semiconductor diode laser of which the wavelength was 810 nm. The power output was fixed at 500 mW in the continuous wave mode with various energy fluencies, which were 1.97, 3.94, and 5.91 J/cm2. A culture of PDLFs without laser irradiation was regarded as a control. Then, cells were additionally incubated in 72 hours for MTS assay and an alkaline phosphatase (ALPase) activity test. At 48 hours post-laser irradiation, western blot analysis was performed to determine extracellular signal-regulated kinase (ERK) activity. ANOVA was used to assess the significance level of the differences among groups (P<0.05). Results At all energy fluencies of laser irradiation, PDLFs proliferation gradually increased for 72 hours without any significant differences compared with the control over the entire period taken together. However, an increment of cell proliferation significantly greater than in the control occurred between 24 and 48 hours at laser irradiation settings of 1.97 and 3.94 J/cm2 (P<0.05). The highest ALPase activity was found at 48 and 72 hours post-laser irradiation with 3.94 J/cm2 energy fluency (P<0.05). The phosphorylated ERK level was more prominent at 3.94 J/cm2 energy fluency than in the control. Conclusions The present study demonstrated that the GaAlAs semiconductor diode laser promoted proliferation and differentiation of human PDLFs. PMID:20607054

Get the LED Out.

ERIC Educational Resources Information Center

Jewett, John W., Jr.

1991-01-01

Describes science demonstrations with light-emitting diodes that include electrical concepts of resistance, direct and alternating current, sine wave versus square wave, series and parallel circuits, and Faraday's Law; optics concepts of real and virtual images, photoresistance, and optical communication; and modern physics concepts of spectral…

Tunable rejection filters with ultra-wideband using zeroth shear mode plate wave resonators

NASA Astrophysics Data System (ADS)

Kadota, Michio; Sannomiya, Toshio; Tanaka, Shuji

2017-07-01

This paper reports wide band rejection filters and tunable rejection filters using ultra-wideband zeroth shear mode (SH0) plate wave resonators. The frequency range covers the digital TV band in Japan that runs from 470 to 710 MHz. This range has been chosen to meet the TV white space cognitive radio requirements of rejection filters. Wide rejection bands were obtained using several resonators with different frequencies. Tunable rejection filters were demonstrated using Si diodes connected to the band rejection filters. Wide tunable ranges as high as 31% were measured by applying a DC voltage to the Si diodes.

Phased laser diode array permits selective excitation of ultrasonic guided waves in coated bone-mimicking tubes

NASA Astrophysics Data System (ADS)

Moilanen, Petro; Salmi, Ari; Kilappa, Vantte; Zhao, Zuomin; Timonen, Jussi; Hæggström, Edward

2017-10-01

This paper validates simulation predictions, which state that specific modes could be enhanced in quantitative ultrasonic bone testing. Tunable selection of ultrasonic guided wave excitation is useful in non-destructive testing since it permits the mediation of energy into diagnostically useful modes while reducing the energy mediated into disturbing contributions. For instance, it is often challenging to distinguish and extract the useful modes from ultrasound signals measured in bone covered by a soft tissue. We show that a laser diode array can selectively excite ultrasound in bone mimicking phantoms. A fiber-coupled diode array (4 elements) illuminated two solid tubes (2-3 mm wall thickness) embraced by an opaque soft-tissue mimicking elastomer coating (5 mm thick). A predetermined time delay matching the selected mode and frequency was employed between the outputs of the elements. The generated ultrasound was detected by a 215 kHz piezo receiver. Our results suggest that this array reduces the disturbances caused by the elastomer cover and so pave way to permit non-contacting in vivo guided wave ultrasound assessment of human bones. The implementation is small, inexpensive, and robust in comparison with the conventional pulsed lasers.

1.083 μm laser operation in Nd,Mg:LiTaO3 crystal

NASA Astrophysics Data System (ADS)

Hu, P. C.; Hang, Y.; Li, R.; Gong, J.; Yin, J. G.; Zhao, C. C.; He, X. M.; Yu, T.; Zhang, L. H.; Chen, W. B.; Zhu, Y. Y.

2011-10-01

Nd,Mg:LiTaO3 single crystal with high optical quality was grown by Czochralski technique. Absorption and fluorescence spectra were investigated. The peak absorption cross section at 806.5 nm and peak emission cross section at 1091 nm are 6.81×10-20 and 3.28×10-20 cm2, respectively. The fluorescence lifetime was measured to be 129 μs. With a laser-diode as the pump source, a maximum 375 mW continuous-wave laser output at 1083 nm has been obtained with a slope efficiency of 7.2% with respect to the pump power.

High-Power Nd:GdVO4 Innoslab Continuous-Wave Laser under Direct 880 nm Pumping

NASA Astrophysics Data System (ADS)

Deng, Bo; Zhang, Heng-Li; Xu, Liu; Mao, Ye-Fei; He, Jing-Liang; Xin, Jian-Guo

2014-11-01

A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

Diode pumped CW and passively Q-switched Nd:LGGG laser at 1062 nm

NASA Astrophysics Data System (ADS)

Yang, H.; Jia, Z. T.; Zhang, B. T.; He, J. L.; Liu, S. D.; Yang, Y.; Tao, X. T.

2012-05-01

We report a Nd:LGGG laser at 1062 nm in the operations of the continuous-wave (CW) and passively Q-switching. The maximum CW output power of 5.62 W was obtained, corresponding to an optical-to-optical conversion efficiency of 49.0% and slope efficiency of 55.9%. By using Cr4+:YAG with initial transmission of 94% as the saturable absorber, for the first time, we got the maximum passively Q-switched output power of 1.21 W, accompanied with a highest pulse repetition rate of 27.1 kHz and a shortest pulse width of 9.1 ns.

Simultaneous dual-wavelength laser operation at 937 and 1062 nm in Nd3+:Gd3Ga5O12

NASA Astrophysics Data System (ADS)

Gao, F.; Sun, G. C.; Li, Y. D.; Dong, Y.; Li, S. T.

2013-08-01

Diode-end-pumped continuous-wave (cw) simultaneous dual-wavelength laser operation at 937 and 1062 nm in a single Nd3+:Gd3Ga5O12 (Nd:GGG) crystal was demonstrated. A total output power of 1.12 W at the two fundamental wavelengths was achieved at incident pump power of 17.6 W. The optical-to-optical conversion was up to 6.4% with respect to the incident pump power. To the best of our knowledge, this is first work on cw simultaneous dual-wavelength operation at 937 and 1062 nm in Nd:GGG crystal.

Unidirectional Transition Waves in Bistable Lattices

NASA Astrophysics Data System (ADS)

Nadkarni, Neel; Arrieta, Andres F.; Chong, Christopher; Kochmann, Dennis M.; Daraio, Chiara

2016-06-01

We present a model system for strongly nonlinear transition waves generated in a periodic lattice of bistable members connected by magnetic links. The asymmetry of the on-site energy wells created by the bistable members produces a mechanical diode that supports only unidirectional transition wave propagation with constant wave velocity. We theoretically justify the cause of the unidirectionality of the transition wave and confirm these predictions by experiments and simulations. We further identify how the wave velocity and profile are uniquely linked to the double-well energy landscape, which serves as a blueprint for transition wave control.

Performance Improvement of Long-Wave Infrared InAs/GaSb Strained-Layer Superlattice Detectors Through Sulfur-Based Passivation

DTIC Science & Technology

2012-01-01

14]. The detector material was processed into a variable area diode array (VADA) of square and circular mesa diodes with the size of diode mesa sides...processed as single element detectors with 410 lm 410 lm square mesas having circular apertures ranging in diameter from 25 to 300 lm. The processing was...passivations schemes with perimeter-to-area ratio (P/A) of 1600 cm1 ( mesa side size is 25 lm). Fig. 3. Inverse of the dynamic resistance area product (RdA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Afonenko, A A; Dorogush, E S; Malyshev, S A

Using a system of coupled travelling wave equations, in the small-signal regime we analyse frequency and noise characteristics of index- or absorption-coupled distributed feedback laser diodes, as well as of Fabry – Perot (FP) laser diodes. It is shown that the weakest dependence of the direct modulation efficiency on the locking frequency in the regime of strong external optical injection locking is exhibited by a FP laser diode formed by highly reflective and antireflective coatings on the end faces of a laser structure. A reduction in the dependence of output characteristics of the laser diode on the locking frequency canmore » be attained by decreasing the reflection coefficient of the antireflective FP mirror. (control of laser radiation parameters)« less

Apparatus Notes

ERIC Educational Resources Information Center

Eaton, Bruce G., Ed.

1977-01-01

Describes a low-cost wave analyzer; how to convert an incandescant light bulb to an x-ray tube; how to use an electric toothbrush to generate waves; the use of a light-emitting diode as a point light source; how to rejuvenate helium-neon lasers; and calibration of an ammeter. (MLH)

Dynamical control on helicity of electromagnetic waves by tunable metasurfaces

PubMed Central

Xu, He-Xiu; Sun, Shulin; Tang, Shiwei; Ma, Shaojie; He, Qiong; Wang, Guang-Ming; Cai, Tong; Li, Hai-Peng; Zhou, Lei

2016-01-01

Manipulating the polarization states of electromagnetic (EM) waves, a fundamental issue in optics, attracted intensive attention recently. However, most of the devices realized so far are either too bulky in size, and/or are passive with only specific functionalities. Here we combine theory and experiment to demonstrate that, a tunable metasurface incorporating diodes as active elements can dynamically control the reflection phase of EM waves, and thus exhibits unprecedented capabilities to manipulate the helicity of incident circular-polarized (CP) EM wave. By controlling the bias voltages imparted on the embedded diodes, we demonstrate that the device can work in two distinct states. Whereas in the “On” state, the metasurface functions as a helicity convertor and a helicity hybridizer within two separate frequency bands, it behaves as a helicity keeper within an ultra-wide frequency band in the “Off” state. Our findings pave the way to realize functionality-switchable devices related to phase control, such as frequency-tunable subwavelength cavities, anomalous reflectors and even holograms. PMID:27272350

Dynamical control on helicity of electromagnetic waves by tunable metasurfaces.

PubMed

Xu, He-Xiu; Sun, Shulin; Tang, Shiwei; Ma, Shaojie; He, Qiong; Wang, Guang-Ming; Cai, Tong; Li, Hai-Peng; Zhou, Lei

2016-06-08

Manipulating the polarization states of electromagnetic (EM) waves, a fundamental issue in optics, attracted intensive attention recently. However, most of the devices realized so far are either too bulky in size, and/or are passive with only specific functionalities. Here we combine theory and experiment to demonstrate that, a tunable metasurface incorporating diodes as active elements can dynamically control the reflection phase of EM waves, and thus exhibits unprecedented capabilities to manipulate the helicity of incident circular-polarized (CP) EM wave. By controlling the bias voltages imparted on the embedded diodes, we demonstrate that the device can work in two distinct states. Whereas in the "On" state, the metasurface functions as a helicity convertor and a helicity hybridizer within two separate frequency bands, it behaves as a helicity keeper within an ultra-wide frequency band in the "Off" state. Our findings pave the way to realize functionality-switchable devices related to phase control, such as frequency-tunable subwavelength cavities, anomalous reflectors and even holograms.

Modeling of light-emitting diode wavefronts for the optimization of transmission holograms.

PubMed

Karthaus, Daniela; Giehl, Markus; Sandfuchs, Oliver; Sinzinger, Stefan

2017-06-20

The objective of applying transmission holograms in automotive headlamp systems requires the adaptation of holograms to divergent and polychromatic light sources like light-emitting diodes (LEDs). In this paper, four different options to describe the scalar light waves emitted by a typical automotive LED are regarded. This includes a new approach to determine the LED's wavefront from interferometric measurements. Computer-generated holograms are designed considering the different LED approximations and recorded into a photopolymer. The holograms are reconstructed with the LED and the resulting images are analyzed to evaluate the quality of the wave descriptions. In this paper, we show that our presented new approach leads to better results in comparison to other wave descriptions. The enhancement is evaluated by the correlation between reconstructed and ideal images. In contrast to the next best approximation, a spherical wave, the correlation coefficient increased by 0.18% at 532 nm, 1.69% at 590 nm, and 0.75% at 620 nm.

Observation of reflected waves on the SABRE positive polarity inductive adder MITL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cuneo, M.E.; Poukey, J.W.; Mendel, C.W.

We are studying the coupling of extraction applied-B ion diodes to Magnetically Insulated Transmission Line (MITLs) on the SABRE (Sandia Accelerator and Beam Research Experiment, 6 MV, 300 kA) positive polarity inductive voltage adder. Our goal is to determine conditions under which efficient coupling occurs. The best total power efficiency for an ideal ion diode load (i.e., without parasitic losses) is obtained by maximizing the product of cathode current and gap voltage. MITLs require that the load impedance be undermatched to the self-limited line operating impedance for efficient transfer of power to ion diodes, independent of transit time isolation, andmore » even in the case of multiple cathode system with significant vacuum electron flow. We observe that this undermatched condition results in a reflected wave which decreases the line voltage and gap electron sheath current, and increases the anode and cathode current in a time-dependent way. The MITL diode coupling is determined by the flow impedance at the adder exit. We also show that the flow impedance increases along the extension MITL on SABRE. Experimental measurements of current and peak voltage are compared to analytical models and TWOQUICK 2.5-D PIC code simulations.« less

Innovative Technologies for Maskless Lithography and Non-Conventional Patterning

DTIC Science & Technology

2008-08-01

wave sources are used and quantitative data is produced on the local field intensities and scattered plane and plasmon wave amplitudes and phases...transistors”, Transducers 2007, Lyon, France, 3EH5.P, 2007. 9. D. Huang and V. Subramanian “Iodine-doped pentacene schottky diodes for high-frequency RFID...wave sources are used and quantitative data is produced on the local field intensities and scattered plane and plasmon wave amplitudes and phases

Paramecium: a promising non-animal bioassay to study the effect of 808 nm infrared diode laser photobiomodulation.

PubMed

Amaroli, Andrea; Parker, Steven; Dorigo, Gianluca; Benedicenti, Alberico; Benedicenti, Stefano

2015-01-01

Photobiostimulation and photobiomodulation (PBM) are terms applied to the manipulation of cellular behavior using low intensity light sources, which works on the principle of inducing a biological response through energy transfer. The aim of this investigation was to identify a laboratory assay to test the effect of an infrared diode laser light (808 nm) on cell fission rate. Sixty cells of Paramecium primaurelia were divided in two groups of 30. The first group (test group) was irradiated, at a temperature of 24°C, for 50 sec by a 808 nm diode laser with a flat top handpiece [1 cm of spot diameter, 1 W in continuous wave (CW), 50 sec irradiation time, 64 J/cm(2) of fluence]. The second group (control group) received no laser irradiation. All cells were transferred onto a depression slide, fed, and incubated in a moist chamber at a temperature of 24°C. The cells were exposed and monitored for 10 consecutive fission rates. Changes in temperature and pH were also evaluated. The exposed cells had a fission rate rhythm faster than the control cells, showing a binary fission significantly (p<0.05) shorter than unexposed cells. No significant effects of laser irradiation on pH and temperature of Paramecium's lettuce infusion medium were observed. The 808 nm infrared diode laser light, at the irradiation parameters used in our work, results in a precocious fission rate in P. primaurelia cells, probably through an increase in metabolic activity, secondary to an energy transfer.

Kinetic Temperature and Electron Density Measurement in an Inductively Coupled Plasma Torch using Degenerate Four-Wave Mixing

NASA Technical Reports Server (NTRS)

Schafer, Julia; Lyons, Wendy; Tong, WIlliam G.; Danehy, Paul M.

2008-01-01

Laser wave mixing is presented as an effective technique for spatially resolved kinetic temperature measurements in an atmospheric-pressure radio-frequency inductively-coupled plasma. Measurements are performed in a 1 kW, 27 MHz RF plasma using a continuous-wave, tunable 811.5-nm diode laser to excite the 4s(sup 3)P2 approaches 4p(sup 3)D3 argon transition. Kinetic temperature measurements are made at five radial steps from the center of the torch and at four different torch heights. The kinetic temperature is determined by measuring simultaneously the line shape of the sub-Doppler backward phase-conjugate degenerate four-wave mixing and the Doppler-broadened forward-scattering degenerate four-wave mixing. The temperature measurements result in a range of 3,500 to 14,000 K+/-150 K. Electron densities measured range from 6.1 (+/-0.3) x 10(exp 15)/cu cm to 10.1 (+/-0.3) x 10(exp 15)/cu cm. The experimental spectra are analyzed using a perturbative treatment of the backward phase-conjugate and forward-geometry wave-mixing theory. Stark width is determined from the collisional broadening measured in the phase-conjugate geometry. Electron density measurements are made based on the Stark width. The kinetic temperature of the plasma was found to be more than halved by adding deionized water through the nebulizer.

Carbon-Nanotube Schottky Diodes

NASA Technical Reports Server (NTRS)

Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

2006-01-01

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Millimeter Wave Sensor For On-Line Inspection Of Thin Sheet Dielectrics

DOEpatents

Bakhtiari, Sasan; Gopalsami, Nachappa; Raptis, Apostolos C.

1999-03-23

A millimeter wave sensor is provided for non-destructive inspection of thin sheet dielectric materials. The millimeter wave sensor includes a Gunn diode oscillator (GDO) source generating a mill meter wave electromagnetic energy signal having a single frequency. A heater is coupled to the GDO source for stabilizing the single frequency. A small size antenna is coupled to the GDO source for transmitting the millimeter wave electromagnetic energy signal to a sample material and for receiving a reflected millimeter wave electromagnetic energy signal from the sample material. Ferrite circulator isolators coupled between the GDO source and the antenna separate the millimeter wave electromagnetic energy signal into transmitted and received electromagnetic energy signal components and a detector detects change in both amplitude and phase of the transmitted and received electromagnetic energy signal components. A millimeter wave sensor is provided for non-destructive inspection of thin sheet dielectric materials. The millimeter wave sensor includes a Gunn diode oscillator (GDO) source generating a mill meter wave electromagnetic energy signal having a single frequency. A heater is coupled to the GDO source for stabilizing the single frequency. A small size antenna is coupled to the GDO source for transmitting the millimeter wave electromagnetic energy signal to a sample material and for receiving a reflected millimeter wave electromagnetic energy signal from the sample material. Ferrite circulator isolators coupled between the GDO source and the antenna separate the millimeter wave electromagnetic energy signal into transmitted and received electromagnetic energy signal components and a detector detects change in both amplitude and phase of the transmitted and received electromagnetic energy signal components.

Contact Whiskers for Millimeter Wave Diodes

NASA Technical Reports Server (NTRS)

Kerr, A. R.; Grange, J. A.; Lichtenberger, J. A.

1978-01-01

Several techniques are investigated for making short conical tips on wires (whiskers) used for contacting millimeter-wave Schottky diodes. One procedure, using a phosphoric and chromic acid etching solution (PCE), is found to give good results on 12 microns phosphor-bronze wires. Full cone angles of 60 degrees-80 degrees are consistently obtained, compared with the 15 degrees-20 degrees angles obtained with the widely used sodium hydroxide etch. Methods are also described for cleaning, increasing the tip diameter (i.e. blunting), gold plating, and testing the contact resistance of the whiskers. The effects of the whisker tip shape on the electrical resistance, inductance, and capacitance of the whiskers are studied, and examples given for typical sets of parameters.

Self-starting picosecond optical pulse source using stimulated Brillouin scattering in an optical fiber.

PubMed

Tang, W W; Shu, C

2005-02-21

We demonstrate a regeneratively mode-locked optical pulse source at about 10 GHz using an optoelectronic oscillator constructed with an electro-absorption modulator integrated distributed feedback laser diode. The 10 GHz RF component is derived from the interaction between the pump wave and the backscattered, frequency-downshifted Stokes wave resulted from stimulated Brillouin scattering in an optical fiber. The component serves as a modulation source for the 1556 nm laser diode without the need for any electrical or optical RF filter to perform the frequency extraction. Dispersion-compensated fiber, dispersion-shifted fiber, and standard single-mode fiber have been used respectively to generate optical pulses at variable repetition rates.

ELECTRONIC MULTIPLIER

DOEpatents

Collier, D.M.; Meeks, L.A.; Palmer, J.P.

1961-01-31

S>An electronic multiplier is described for use in analog computers. Two electrical input signals are received; one controls the slope of a saw-tooth voltage wave while the other controls the time duration of the wave. A condenser and diode clamps are provided to sustain the crest voltage reached by the wave, and for storing that voltage to provide an output signal which is a steady d-c voltage.

Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

NASA Technical Reports Server (NTRS)

Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

1988-01-01

Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers

DOE PAGES

Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; ...

2017-03-24

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in spectral region from 1.9 to 3.3 μm. Coated devices with ~100-μm-wide aperture and 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at room temperature. The corresponding narrow ridge lasers with nearly diffraction limited beams operate in CW regime with tens of mW of output power up to 60 °C. Two step shallow/deep narrow/wide ridge waveguide devicesmore » showed lower threshold currents and higher slope efficiencies compared to single step narrow ridge lasers. Laterally coupled DFB lasers mounted epi-up generated above 10 mW of tunable single frequency CW power at 20 °C near 3.22 μm.« less

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

PubMed Central

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-01-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W. PMID:27811994

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals.

PubMed

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-04

The spectral properties and laser performance of Er:SrF 2 single crystals were investigated and compared with Er:CaF 2 . Er:SrF 2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er 3+ : 4 I 11/2 level) than those of Er:CaF 2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF 2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF 2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Highly efficient dual-wavelength mid-infrared CW Laser in diode end-pumped Er:SrF2 single crystals

NASA Astrophysics Data System (ADS)

Ma, Weiwei; Qian, Xiaobo; Wang, Jingya; Liu, Jingjing; Fan, Xiuwei; Liu, Jie; Su, Liangbi; Xu, Jun

2016-11-01

The spectral properties and laser performance of Er:SrF2 single crystals were investigated and compared with Er:CaF2. Er:SrF2 crystals have larger absorption cross-sections at the pumping wavelength, larger mid-infrared stimulated emission cross-sections and much longer fluorescence lifetimes of the upper laser level (Er3+:4I11/2 level) than those of Er:CaF2 crystals. Dual-wavelength continuous-wave (CW) lasers around 2.8 μm were demonstrated in both 4at.% and 10at.% Er:SrF2 single crystals under 972 nm laser diode (LD) end pumping. The laser wavelengths are 2789.3 nm and 2791.8 nm in the former, and 2786.4 nm and 2790.7 nm in the latter, respectively. The best laser performance has been demonstrated in lightly doped 4at.% Er:SrF2 with a low threshold of 0.100 W, a high slope efficiency of 22.0%, an maximum output power of 0.483 W.

Closure of skin incisions by laser-welding with a combination of two near-infrared diode lasers: preliminary study for determination of optimal parameters

NASA Astrophysics Data System (ADS)

Hu, Liming; Lu, Zhihua; Wang, Biao; Cao, Junsheng; Ma, Xiaobo; Tian, Zhenhua; Gao, Zhijian; Qin, Li; Wu, Xiaodong; Liu, Yun; Wang, Lijun

2011-03-01

Laser welding has the potential to become an effective method for wound closure and healing without sutures. Closure of skin incisions by laser welding with a combination of two near-infrared lasers (980 and 1064 nm), was performed for the first time in this study. One centimeter long, full-thickness incisions were made on the Wistar rat's dorsal skin. The efficiencies of laser-welding with different parameters were investigated. Incision-healing, histology examination, and a tensile strength test of incisions were recorded. Laser welding with the irradiance level of 15.9 W/cm2 for both 980 and 1064-nm lasers and exposure time of 5 s per spot in continuous wave mode yielded a more effective closure and healing with minimal thermal damage, faster recovery, and stronger apposition in comparison with a suturing technique. The conclusion is that skin welding with a combination of two near-infrared diode lasers can be a good candidate for incision closure, and further investigations are in progress for clinical use.

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

NASA Astrophysics Data System (ADS)

Barletta, M.; Rubino, G.; Gisario, A.

2011-02-01

The use of a continuous wave-high power diode laser for removing surface Co-binder from Co-cemented tungsten carbide (WC-Co (5.8 wt%.)) hardmetal slabs was investigated. Combined scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction analyses were performed in order to study the phase transformations and micro-structural modifications of the WC-Co substrates occurring during and after laser irradiation. The micro-structure of the WC-Co progressively transforms as energy density increased, exhibiting stronger removal of Co and WC grain growth. At very high energy density, local melting of the WC grains with the formation of big agglomerates of interlaced grains is observed, and the crystalline structure of the irradiated substrate shows the presence of a brittle ternary eutectic phase of W, Co and C (often referred to as the η-phase). The latter can be detrimental to the mechanical properties of WC-Co. Therefore, the proper adjustment of the laser processing parameters plays a crucial role in surface treatments of WC-Co substrates prior to post-processing like diamond deposition.

Ultrahigh responsivity of optically active, semiconducting asymmetric nano-channel diodes

NASA Astrophysics Data System (ADS)

Akbas, Y.; Stern, A.; Zhang, L. Q.; Alimi, Y.; Song, A. M.; Iñiguez-de-la-Torre, I.; Mateos, J.; González, T.; Wicks, G. W.; Sobolewski, Roman

2015-10-01

We present our research on the fabrication and optical characterization of novel semiconducting asymmetric nano-channel diodes (ANCDs). We focus on optical properties of ANCDs and demonstrate that they can be operated as very sensitive, single-photon-level, visible-light photodetectors. Our test devices consisted of 1.2-μm-long, ∼200- to 300-nm-wide channels that were etched in an InGaAs/InAlAs quantum-well hetero structure with a twodimensional electron gas layer. The ANCD I-V curves were collected by measuring the transport current both in the dark and under 800-nm-wavelength, continuous-wave-light laser illumination. In all of our devices, the impact of the light illumination was very clear, and there was a substantial photocurrent, even for incident optical power as low as 1 nW. The magnitude of the optical responsivity in ANCDs with the conducting nano-channel increased linearly with a decrease in optical power over many orders of magnitude, reaching a value of almost 10,000 A/W at 1-nW excitation.

Wavelength Locking to CO2 Absorption Line-Center for 2-Micron Pulsed IPDA Lidar Application

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Petros, Mulugeta; Antill, Charles W.; Singh, Upendra N.; Yu, Jirong

2016-01-01

An airborne 2-micron triple-pulse integrated path differential absorption (IPDA) lidar is currently under development at NASA Langley Research Center (LaRC). This IPDA lidar system targets both atmospheric carbon dioxide (CO2) and water vapor (H2O) column measurements. Independent wavelength control of each of the transmitted laser pulses is a key feature for the success of this instrument. The wavelength control unit provides switching, tuning and locking for each pulse in reference to a 2-micron CW (Continuous Wave) laser source locked to CO2 line-center. Targeting the CO2 R30 line center, at 2050.967 nanometers, a wavelength locking unit has been integrated using semiconductor laser diode. The CO2 center-line locking unit includes a laser diode current driver, temperature controller, center-line locking controller and CO2 absorption cell. This paper presents the CO2 center-line locking unit architecture, characterization procedure and results. Assessment of wavelength jitter on the IPDA measurement error will also be addressed by comparison to the system design.

Closure of skin incisions by laser-welding with a combination of two near-infrared diode lasers: preliminary study for determination of optimal parameters.

PubMed

Hu, Liming; Lu, Zhihua; Wang, Biao; Cao, Junsheng; Ma, Xiaobo; Tian, Zhenhua; Gao, Zhijian; Qin, Li; Wu, Xiaodong; Liu, Yun; Wang, Lijun

2011-03-01

Laser welding has the potential to become an effective method for wound closure and healing without sutures. Closure of skin incisions by laser welding with a combination of two near-infrared lasers (980 and 1064 nm), was performed for the first time in this study. One centimeter long, full-thickness incisions were made on the Wistar rat's dorsal skin. The efficiencies of laser-welding with different parameters were investigated. Incision-healing, histology examination, and a tensile strength test of incisions were recorded. Laser welding with the irradiance level of 15.9 W∕cm(2) for both 980 and 1064-nm lasers and exposure time of 5 s per spot in continuous wave mode yielded a more effective closure and healing with minimal thermal damage, faster recovery, and stronger apposition in comparison with a suturing technique. The conclusion is that skin welding with a combination of two near-infrared diode lasers can be a good candidate for incision closure, and further investigations are in progress for clinical use.

2.75 THz tuning with a triple-DFB laser system at 1550 nm and InGaAs photomixers

NASA Astrophysics Data System (ADS)

Deninger, Anselm J.; Roggenbuck, A.; Schindler, S.; Preu, S.

2015-03-01

To date, exploiting the full bandwidth of state-of-the-art InGaAs photomixers for generation and detection of continuous-wave (CW) THz radiation (typ. ~50 GHz to ~3 THz) required complex and costly external-cavity diode lasers with motorized resonator control. Distributed feedback (DFB) lasers, by contrast, are compact and inexpensive, but the tuning range per diode is limited to ~600 GHz at 1.5 μm. In this paper, we show that a combination of three DFB diodes covers the complete frequency range from 0 - 2750 GHz without any gaps. In combination with InGaAs-based photomixers for terahertz generation and detection, the system achieves a dynamic range of > 100 dB at 56 GHz, 64 dB at 1000 GHz, and 26 dB at 2500 GHz. A field-programmable gate array (FPGA)-based lock-in amplifier permits a flexible adjustment of the integration time from 0.5 ms to 600 ms. Employing an optimized "fast scan" mode, a spectrum of ~1200 GHz - the bandwidth of each subset of two lasers - and 40 MHz steps is acquired in less than one minute, still maintaining a reasonable dynamic range. To the best of our knowledge, the bandwidth of 2.75 THz presents a new record for DFB-based CW-terahertz systems.

Physics of frequency-modulated comb generation in quantum-well diode lasers

NASA Astrophysics Data System (ADS)

Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

2018-05-01

We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

Laser at 532 nm by intracavity frequency-doubling in BBO

NASA Astrophysics Data System (ADS)

Yuan, Xiandan; Wang, Jinsong; Chen, Yongqi; Wu, Yulong; Qi, Yunfei; Sun, Meijiao; Wang, Qi

2017-06-01

A simple and compact linear resonator green laser at 532 nm is generated by intracavity frequency-doubling of a diode-side-pumped acousto-optically (AO) Q-switched Nd:YAG laser at 1064 nm. Two acousto-optic Q-switches were placed orthogonally with each other to improve the hold-off capacity. As high as 214 W of continuous-wave (CW) and 154 W of quasi-continuous-wave (QCW) output power at 1064 nm were obtained when the pumping power was 1598 W. The type I phase-matched BBO crystal was used as the nonlinear medium in the second harmonic generation. A green laser with an average output power of 37 W was obtained at a repetition rate of 20 kHz and a pulse width of 54 ns, which corresponds to pulse energy of 1.85 mJ per pulse and a peak power 34.26 kW, respectively. Project supported by the Beijing Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, the National High Technology Research and Development Program of China (No. 2014AA032607), and the National Natural Science Foundation of China (Nos. 61404135, 61405186, 61308032, 61308033).

Generation of spectrally stable continuous-wave emission and ns pulses with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier.

PubMed

Klehr, A; Wenzel, H; Fricke, J; Bugge, F; Erbert, G

2014-10-06

We have developed a diode-laser based master oscillator power amplifier (MOPA) light source which emits high-power spectrally stabilized and nearly-diffraction limited optical pulses in the nanoseconds range as required by many applications. The MOPA consists of a distributed Bragg reflector (DBR) laser as master oscillator driven by a constant current and a ridge waveguide power amplifier (PA) which can be driven by a constant current (DC) or by rectangular current pulses with a width of 5 ns at a repetition frequency of 200 kHz. Under pulsed operation the amplifier acts as an optical gate, converting the CW input beam emitted by the DBR laser into a train of short amplified optical pulses. With this experimental MOPA arrangement no relaxation oscillations occur. A continuous wave power of 1 W under DC injection and a pulse power of 4 W under pulsed operation are reached. For both operational modes the optical spectrum of the emission of the amplifier exhibits a peak at a constant wavelength of 973.5 nm with a spectral width < 10 pm.

Continuous wave optical spectroscopic system for use in magnetic resonance imaging scanners for the measurement of changes in hemoglobin oxygenation states in humans

NASA Astrophysics Data System (ADS)

Hulvershorn, Justin; Bloy, Luke; Leigh, John S.; Elliott, Mark A.

2003-09-01

A continuous wave near infrared three-wavelength laser diode spectroscopic (NIRS) system designed for use in magnetic resonance imaging (MRI) scanners is described. This system measures in vivo changes in the concentrations of oxyhemoglobin (HbO) and deoxyhemoglobin (Hb) in humans. An algorithm is implemented to map changes in light intensity to changes in the concentrations of Hb and HbO. The system's signal to noise ratio is 3.4×103 per wavelength on an intralipid phantom with 10 Hz resolution. To demonstrate the system's performance in vivo, data taken on the human forearm during arterial occlusion, as well as data taken on the forehead during extended breath holds, are presented. The results show that the instrument is an extremely sensitive detector of hemodynamic changes in human tissue at high temporal resolution. NIRS directly measures changes in the concentrations of hemoglobin species. For this reason, NIRS will be useful in determining the sources of MRI signal changes in the body due to hemodynamic causes, while the precise anatomic information provided by MRI will aid in localizing NIRS contrast and improving the accuracy of models of light transport through tissue.

Continuous wave cavity ring down spectroscopy measurements of velocity distribution functions of argon ions in a helicon plasma.

PubMed

Chakraborty Thakur, Saikat; McCarren, Dustin; Carr, Jerry; Scime, Earl E

2012-02-01

We report continuous wave cavity ring down spectroscopy (CW-CRDS) measurements of ion velocity distribution functions (VDFs) in low pressure argon helicon plasma (magnetic field strength of 600 G, T(e) ≈ 4 eV and n ≈ 5 × 10(11) cm(-3)). Laser induced fluorescence (LIF) is routinely used to measure VDFs of argon ions, argon neutrals, helium neutrals, and xenon ions in helicon sources. Here, we describe a CW-CRDS diagnostic based on a narrow line width, tunable diode laser as an alternative technique to measure VDFs in similar regimes but where LIF is inapplicable. Being an ultra-sensitive, cavity enhanced absorption spectroscopic technique; CW-CRDS can also provide a direct quantitative measurement of the absolute metastable state density. The proof of principle CW-CRDS measurements presented here are of the Doppler broadened absorption spectrum of Ar II at 668.6138 nm. Extrapolating from these initial measurements, it is expected that this diagnostic is suitable for neutrals and ions in plasmas ranging in density from 1 × 10(9) cm(-3) to 1 × 10(13) cm(-3) and target species temperatures less than 20 eV.

A cavity ring-down spectroscopy sensor for real-time Hall thruster erosion measurements.

PubMed

Lee, B C; Huang, W; Tao, L; Yamamoto, N; Gallimore, A D; Yalin, A P

2014-05-01

A continuous-wave cavity ring-down spectroscopy sensor for real-time measurements of sputtered boron from Hall thrusters has been developed. The sensor uses a continuous-wave frequency-quadrupled diode laser at 250 nm to probe ground state atomic boron sputtered from the boron nitride insulating channel. Validation results from a controlled setup using an ion beam and target showed good agreement with a simple finite-element model. Application of the sensor for measurements of two Hall thrusters, the H6 and SPT-70, is described. The H6 was tested at power levels ranging from 1.5 to 10 kW. Peak boron densities of 10 ± 2 × 10(14) m(-3) were measured in the thruster plume, and the estimated eroded channel volume agreed within a factor of 2 of profilometry. The SPT-70 was tested at 600 and 660 W, yielding peak boron densities of 7.2 ± 1.1 × 10(14) m(-3), and the estimated erosion rate agreed within ~20% of profilometry. Technical challenges associated with operating a high-finesse cavity in the presence of energetic plasma are also discussed.

Continuous wave cavity ring down spectroscopy measurements of velocity distribution functions of argon ions in a helicon plasma

NASA Astrophysics Data System (ADS)

Chakraborty Thakur, Saikat; McCarren, Dustin; Carr, Jerry; Scime, Earl E.

2012-02-01

We report continuous wave cavity ring down spectroscopy (CW-CRDS) measurements of ion velocity distribution functions (VDFs) in low pressure argon helicon plasma (magnetic field strength of 600 G, Te ≈ 4 eV and n ≈ 5 × 1011 cm-3). Laser induced fluorescence (LIF) is routinely used to measure VDFs of argon ions, argon neutrals, helium neutrals, and xenon ions in helicon sources. Here, we describe a CW-CRDS diagnostic based on a narrow line width, tunable diode laser as an alternative technique to measure VDFs in similar regimes but where LIF is inapplicable. Being an ultra-sensitive, cavity enhanced absorption spectroscopic technique; CW-CRDS can also provide a direct quantitative measurement of the absolute metastable state density. The proof of principle CW-CRDS measurements presented here are of the Doppler broadened absorption spectrum of Ar II at 668.6138 nm. Extrapolating from these initial measurements, it is expected that this diagnostic is suitable for neutrals and ions in plasmas ranging in density from 1 × 109 cm-3 to 1 × 1013 cm-3 and target species temperatures less than 20 eV.

A Comparison of Laser Induced Florescence and Continuous Wave Ring Down Spectroscopy Measurements of Argon Ion and Neutral VDFs in a Helicon Plasma

NASA Astrophysics Data System (ADS)

McCarren, Dustin; Vandervort, Robert; Carr, Jerry, Jr.; Scime, Earl

2012-10-01

In this work, we compare two spectroscopic methods for measuring the velocity distribution functions (VDFs) of argon ions and neutrals in a helicon plasma: laser induced florescence (LIF) and continuous wave cavity ring down spectroscopy (CW-CRDS). An established and powerful technique, LIF suffers from the requirement that the initial state of the LIF sequence have a substantial density. In most cases, this requirement limits LIF to ions and atoms with large metastable state densities for the given plasma conditions. CW-CRDS is considerably more sensitive than LIF and can potentially be applied to much lower density populations of ion and atom states. However, CRDS is a line integrated technique that lacks the spatial resolution of LIF. CRDS is a proven, ultra-sensitive, cavity enhanced absorption spectroscopy technique and when combined with a CW diode laser that has a sufficiently narrow linewidth, the Doppler broadened absorption line, i.e., the VDFs, can be measured. We present CW-CRDS and LIF measurements of the VDFs in an argon plasma using the 668.614 nm (in vacuum) line of Ar II and the 667.9125 nm (in vacuum) line of Ar I.

Comparative study of high power Tm:YLF and Tm:LLF slab lasers in continuous wave regime.

PubMed

Berrou, Antoine; Collett, Oliver J P; Morris, Daniel; Esser, M J Daniel

2018-04-16

We report on Tm:YLF and Tm:LLF slab lasers (1.5 x 11 x 20 mm 3 ) end pumped from one end with a high-brightness 792 nm laser diode stack. These two lasers are compared under identical pump conditions in continuous-wave regime. A stronger negative thermal lens in Tm:LLF than in Tm:YLF is highlighted, making it more difficult to operate the Tm:LLF laser under stable lasing conditions. In a configuration where the high reflectivity cavity mirror has a radius of curvature of r = 150 mm, the Tm:YLF (Tm:LLF) laser produces a maximum output power of 150 W (143 W) for 428 W of incident pump power (respectively). For a second cavity configuration where the high reflectivity cavity mirror has a radius of curvature of r = 500 mm, the Tm:YLF laser produces a maximum output power of 164 W for 412 W of incident pump power and a 57% slope efficiency with respect to the absorbed pump power. The emitted wavelength of these two lasers are measured as a function of the output coupler reflectivity and it shows that Tm:LLF laser emits at a longer wavelength than Tm:YLF.

Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology

NASA Astrophysics Data System (ADS)

Péré-Laperne, Nicolas; Berthoz, Jocelyn; Taalat, Rachid; Rubaldo, Laurent; Kerlain, Alexandre; Carrère, Emmanuel; Dargent, Loïc.

2016-05-01

Sofradir recently presented Daphnis, its latest 10 μm pitch product family. Both Daphnis XGA and HD720 are 10μm pitch mid-wave infrared focal plane array. Development of small pixel pitch is opening the way to very compact products with a high spatial resolution. This new product is taking part in the HOT technology competition allowing reductions in size, weight and power of the overall package. This paper presents the recent developments achieved at Sofradir to make the 10μm pitch HgCdTe focal plane array based on the legacy technology. Electrical and electro-optical characterizations are presented to define the appropriate design of 10μm pitch diode array. The technological tradeoffs are explained to lower the dark current, to keep high quantum efficiency with a high operability above 110K, F/4. Also, Sofradir recently achieved outstanding Modulation Transfer Function (MTF) demonstration at this pixel pitch, which clearly demonstrates the benefit to users of adopting 10μm pixel pitch focal plane array based detectors. Furthermore, the HgCdTe technology has demonstrated an increase of the operating temperature, plus 40K, moving from the legacy to the P-on-n one at a 15μm pitch in mid-wave band. The first realizations using the extrinsic P-on-n technology and the characterizations of diodes with a 10μm pitch neighborhood will be presented in both mid-wave and long-wave bands.

Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

NASA Astrophysics Data System (ADS)

Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

2015-03-01

Numerical simulation has been made to predict the RF performance of <0001> direction and <> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that <0001> direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <> direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for <0001> direction 4H-SiC IMPATT compared to <> direction. However, the quality factor Q for the <> direction 4H-SiC IMPATT diode is lower than that of <0001> direction, which implies that the <> direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with <0001> direction 4H-SiC IMPATT diode.

Low-power laser use in the treatment of alopecia and crural ulcers

NASA Astrophysics Data System (ADS)

Ciuchita, Tavi; Usurelu, Mircea; Antipa, Ciprian; Vlaiculescu, Mihaela; Ionescu, Elena

1998-07-01

The authors tried to verify the efficacy of Low Power Laser (LPL) in scalp alopecia and crural ulcers of different causes. Laser used was (red diode, continuous emission, 8 mW power, wave length 670 nm spot size about 5 mm diameter on some points 1 - 2 minutes per point. We also use as control classical therapy. Before, during and after treatment, histological samples were done for alopecia. For laser groups (alopecia and ulcers) the results were rather superior and in a three or twice time shorter than control group. We conclude that LPL therapy is a very useful complementary method for the treatment of scalp alopecia and crural ulcers.

11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene.

PubMed

Okhrimchuk, Andrey G; Obraztsov, Petr A

2015-06-08

We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires-Tournois interferometer.

Development of a cw-laser-based cavity-ringdown sensor aboard a spacecraft for trace air constituents

NASA Technical Reports Server (NTRS)

Awtry, A. R.; Miller, J. H.

2002-01-01

The progress in the development of a sensor for the detection of trace air constituents to monitor spacecraft air quality is reported. A continuous-wave (cw), external-cavity tunable diode laser centered at 1.55 micrometers is used to pump an optical cavity absorption cell in cw-cavity ringdown spectroscopy (cw-CRDS). Preliminary results are presented that demonstrate the sensitivity, selectivity and reproducibility of this method. Detection limits of 2.0 ppm for CO, 2.5 ppm for CO2, 1.8 ppm for H2O, 19.4 ppb for NH3, 7.9 ppb for HCN and 4.0 ppb for C2H2 are calculated.

Fiber laser at 2 μm for soft tissue surgery

NASA Astrophysics Data System (ADS)

Ghosh, Aditi; Pal, Debasis; Sen, Ranjan; Pal, Atasi

2014-11-01

Strong water absorption at 2 μm generated recent interest in lasers at this wavelength for soft tissue surgery. A fiber Bragg grating-based, all-fiber, continuous-wave, cladding pumped, thulium-doped fiber laser at 1.95 μm is configured. The thulium-doped active fiber with octagonal-shaped inner cladding is pumped at 808 nm (total power of 17 W) with six laser diodes through a combiner. The laser power of 3.3 W (after elimination of unabsorbed pump power through a passive fiber) with slope efficiency of 23% (against launched pump power) is achieved. The linear variation of laser power with pump offers scope of further power scaling.

Highly efficient quantum dot-based photoconductive THz materials and devices

NASA Astrophysics Data System (ADS)

Rafailov, E. U.; Leyman, R.; Carnegie, D.; Bazieva, N.

2013-09-01

We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, <=850 nm and <=1300 nm.

11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene

PubMed Central

Okhrimchuk, Andrey G.; Obraztsov, Petr A.

2015-01-01

We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires–Tournois interferometer. PMID:26052678

Dual-wavelength laser operation in a-cut Nd:MgO:LiNbO3

NASA Astrophysics Data System (ADS)

Fan, M. Q.; Li, T.; Zhao, S. Z.; Li, G. Q.; Li, D. C.; Yang, K. J.; Qiao, W. C.; Li, S. X.

2016-03-01

Diode-pumped dual-wavelength a-cut Nd:MgO:LiNbO3 lasers near 1085 and 1093 nm were experimentally and theoretically investigated. The simultaneous dual-wavelength emitting was mainly attributed to the Boltzmann distribution of the occupation in the Stark-split energy-levels in manifold 4I11/2. Under an absorbed pump power of 7.45 W, a maximum continuous wave (CW) output power of 1.23 W was obtained, giving a slope efficiency of 21.2%. Using Cr:YAG as saturable absorber, the shortest pulse duration of 28 ns was obtained with a repetition rate of 24 kHz, resulting in a peak power of 729 W.

A 1,470 nm diode laser in stapedotomy: Mechanical, thermal, and acoustic effects.

PubMed

Koenraads, Simone P C; de Boorder, Tjeerd; Grolman, Wilko; Kamalski, Digna M A

2017-08-01

Multiple laser systems have been investigated for their use in stapes surgery in patients with otosclerosis. The diode 1,470 nm laser used in this study is an attractive laser system because it is easily transported and relatively inexpensive in use. This wavelength has relative high absorption in water. This study aimed to investigate the mechanical, thermal, and acoustic effects of the diode 1,470 nm laser on a stapes in an inner ear model. Experiments were performed in an inner ear model including fresh frozen human stapes. High-speed imaging with frame rates up to 2,000 frames per second (f/s) was used to visualize the effects in the vestibule during fenestration of the footplate. A special high-speed color Schlieren technique was used to study thermal effects. The sound produced by perforation was recorded by a hydrophone. Single pulse settings of the diode 1,470 nm laser were 100 ms, 3 W. Diode 1,470 nm laser fenestration showed mechanical effects with small vapor bubbles and pressure waves pushed into the vestibule. Thermal imaging visualized an increase temperature underneath the stapes footplate. Acoustic effects were limited, but larger sounds levels were reached when vaporization bubbles arise and explode in the vestibule. The diode 1,470 nm laser highly absorbs in perilymph and is capable of forming a clear fenestration in the stapes. An overlapping laser pulse will increase the risk of vapor bubbles, pressure waves, and heating the vestibule. As long as we do not know the possible damage of these effects to the inner ear function, it seems advisable to use the laser with less potential harm. Lasers Surg. Med. 49:619-624, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Dynamics of High Temperature Plasmas.

DTIC Science & Technology

1985-10-01

25 VI. > LASER BEAT WAVE PARTICLE ACCELERATION-.. ..... .. 27 ,, VII. ORBITRON MASER DESIGN .. ..... ............. 30 0 VIIM> ELECTRON BEAM STABILITY...IN THE MODIFIED BETATRON .... ............ 32 IX. * RELATIVISTIC ELECTRON BEAM DIODE DESIGN . . . . 35 X. FREE ELECTRON LASER APPLICATION TO XUV...Accelerators (B), VI. Laser Beat Wave Particle Acceleration, VII. Orbitron Maser Design , VIII. Electron Beam Stability in the Modified Betatron, IX

Continuous Wave Ring-Down Spectroscopy Diagnostic for Measuring Argon Ion and Neutral Velocity Distribution Functions in a Helicon Plasma

NASA Astrophysics Data System (ADS)

McCarren, Dustin; Vandervort, Robert; Soderholm, Mark; Carr, Jerry, Jr.; Galante, Matthew; Magee, Richard; Scime, Earl

2013-10-01

Cavity Ring-Down Spectroscopy CRDS is a proven, ultra-sensitive, cavity enhanced absorption spectroscopy technique. When combined with a continuous wavelength (CW) diode laser that has a sufficiently narrow line width, the Doppler broadened absorption line, i.e., the velocity distribution functions (IVDFs), can be measured. Measurements of IVDFS can be made using established techniques, such as laser induced fluorescence (LIF). However, LIF suffers from the requirement that the initial state of the LIF sequence have a substantial density. This usually limits LIF to ions and atoms with large metastable state densities for the given plasma conditions. CW-CRDS is considerably more sensitive than LIF and can potentially be applied to much lower density populations of ion and atom states. In this work we present ongoing measurements of the CW-CRDS diagnostic and discuss the technical challenges of using CW-CRDS to make measurements in a helicon plasma.

Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE PAGES

Dong, Lei; Li, Chunguang; Sanchez, Nancy P.; ...

2016-01-05

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

Compact CH 4 sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Lei; Li, Chunguang; Sanchez, Nancy P.

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 µm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH 4 sensor with a small footprint (32 x 20 x 17 cm 3) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH 4 concentrations, respectively. An Allan-Werle deviation analysis shows that themore » measurement precision can reach 1.4 ppb for a 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH 4 sensor system.« less

Treatment of Gingival Hyperpigmentation by Diode Laser for Esthetical Purposes

PubMed Central

El Shenawy, Hanaa M.; Nasry, Sherine A.; Zaky, Ahmed A.; Quriba, Mohamed A. A.

2015-01-01

BACKGROUND: Gingival hyperpigmentation is a common esthetical concern in patients with gummy smile or excessive gingival display. Laser ablation has been recognized recently as the most effective, pleasant and reliable technique. It has the advantage of easy handling, short treatment time, hemostasis, decontamination, and sterilization effect. AIM: In the present study we wanted to explore the efficacy of a 980 nm wavelength diode laser in gingival depigmentation clinically by using both VAS and digital imaging method as means of assessment. METHODS: Diode laser ablation was done for 15 patients who requested cosmetic therapy for melanin pigmented gums. The laser beam delivered by fiberoptic with a diameter of 320 µm, the diode laser system has 980 nm wave lengths and 3 W irradiation powers, in a continuous contact mode in all cases, the entire surface of each pigmented maxillary and mandibular gingiva that required treatment was irradiated in a single session. Clinical examination and digital image analysis were done and the patients were followed up for 3 successive months. RESULTS: There was a statistically significant change in prevalence of bleeding after treatment, as none of the cases showed any signs of bleeding 1 week, 1 month and 3 months after ablation. No statistically significant change was observed in the prevalence of swelling after treatment The VAS evaluation demonstrated that only 4 patients complained of mild pain immediately after the procedure. No pain was perceived from the patients in the rest of the follow up period. There was no statistically significant change in prevalence of pain immediately after treatment compared to pain during treatment. There was a decrease in cases with mild pain after 1 week, 1 month as well as 3 months compared to pain during treatment and immediately after treatment. CONCLUSION: Within the limitations of this study, the use of diode laser was shown to be a safe and effective treatment modality that provides optimal aesthetics with minimal discomfort in patients with gingival hyperpigmentation. PMID:27275269

Effect of diode laser in the treatment of patients with nonspecific chronic low back pain: a randomized controlled trial.

PubMed

Vallone, Francesco; Benedicenti, Stefano; Sorrenti, Eugenio; Schiavetti, Irene; Angiero, Francesca

2014-09-01

Low back pain is a common, highly debilitating condition, whose severity is variable. This study evaluated the efficacy of treatment with Ga-Al-As diode laser (980 nm) with a large diameter spot (32 cm(2)), in association with exercise therapy, in reducing pain. The present study aimed to evaluate the pain reduction efficacy of treatment with the Ga-Al-As diode laser (980 nm) in combination with exercise therapy, in patients with chronic low back pain (CLBP). This study evaluated 100 patients with CLBP (mean age 60 years) who were randomly assigned to two groups. The laser plus exercises group (Laser+EX: 50 patients) received low-level laser therapy (LLLT) with a diode laser, 980 nm, with a specific handpiece [32 cm(2) irradiation spot size, power 20 W in continuous wave (CW), fluence 37.5J/cm(2), total energy per point 1200 J] thrice weekly, and followed a daily exercise schedule for 3 weeks (5 days/week). The exercises group (EX: 50 patients) received placebo laser therapy plus daily exercises. The outcome was evaluated on the visual analogue pain scale (VAS), before and after treatment. At the end of the 3 week period, the Laser+EX group showed a significantly greater decrease in pain than did the EX group. There was a significant difference between the two groups, with average Δ VAS scores of 3.96 (Laser+EX group) and 2.23 (EX group). The Student's t test demonstrated a statistically significant difference between the two groups, at p<0.001. This study demonstrated that the use of diode laser (980 nm) with large diameter spot size, in association with exercise therapy, appears to be effective. Such treatment might be considered a valid therapeutic option within rehabilitation programs for nonspecific CLBP.

Effect of Initiators on Thermal Changes in Soft Tissues Using a Diode Laser.

PubMed

Romanos, Georgios E; Sacks, Danielle; Montanaro, Nicholas; Delgado-Ruiz, Rafael; Calvo-Guirado, Jose Luis; Javed, Fawad

2018-06-15

The aim was to determine the effect of various initiators on the thermal changes that occur during incisions performed in soft tissues using a diode laser. There are no studies that have assessed the effect of various initiators on the thermal changes that occur during incisions performed in soft tissues using a diode laser. Thermal changes were observed during standardized incisions in chicken breast (without skin) via thermoelements over a 10-sec irradiation period. Incisions were created using a 975 nm diode laser with a 320 μ fiber tip diameter. Incisions (10 in each group) were performed with and without an initiator (control group). Red/blue articulating paper, cork, and SureStep ® were used as initiators. The tissue was irradiated in a continuous wave mode at 3 and 6 W in room temperature (21°C). At 3 and 6 W without any initiator, the mean temperature increased by 5.7°C versus 12.4°C, respectively. Cork initiator at 3 and 6 W resulted in temperature increase by 4.88°C versus 6.21°C, respectively. Incisions made using the blue/red articulating paper-initiated tip resulted in temperature increase by 2.9/5.8°C versus 8.2/7.6°C at 3 and 6 W power settings, respectively. Initiation with SureStep resulted in temperature increase by 2.3°C and at 6 W by 4.1°C. No significant differences were recorded between the different groups, but higher temperatures were associated with higher power settings. The power settings of the diode laser and type of initiator used, both effect the degree to which the temperature of the soft tissue increases during incisions and have to be considered for the safety in soft tissue applications.

NASA seeking high-power 60-GHz IMPATT diodes

NASA Technical Reports Server (NTRS)

Haugland, E. J.

1984-01-01

Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).

Directional control of infrared antenna-coupled tunnel diodes.

PubMed

Slovick, Brian A; Bean, Jeffrey A; Krenz, Peter M; Boreman, Glenn D

2010-09-27

Directional control of received infrared radiation is demonstrated with a phased-array antenna connected by a coplanar strip transmission line to a metal-oxide-metal (MOM) tunnel diode. We implement a MOM diode to ensure that the measured response originates from the interference of infrared antenna currents at specific locations in the array. The reception angle of the antenna is altered by shifting the diode position along the transmission line connecting the antenna elements. By fabricating the devices on a quarter wave dielectric layer above a ground plane, narrow beam widths of 35° FWHM in power and reception angles of ± 50° are achieved with minimal side lobe contributions. Measured radiation patterns at 10.6 μm are substantiated by electromagnetic simulations as well as an analytic interference model.

ELECTRONIC TRIGGER CIRCUIT

DOEpatents

Russell, J.A.G.

1958-01-01

An electronic trigger circuit is described of the type where an output pulse is obtained only after an input voltage has cqualed or exceeded a selected reference voltage. In general, the invention comprises a source of direct current reference voltage in series with an impedance and a diode rectifying element. An input pulse of preselected amplitude causes the diode to conduct and develop a signal across the impedance. The signal is delivered to an amplifier where an output pulse is produced and part of the output is fed back in a positive manner to the diode so that the amplifier produces a steep wave front trigger pulsc at the output. The trigger point of the described circuit is not subject to variation due to the aging, etc., of multi-electrode tabes, since the diode circuit essentially determines the trigger point.

Microwave and millimeter-wave resonant tunneling diodes

NASA Technical Reports Server (NTRS)

Sollner, T. C. L. Gerhard; Brown, Elliott R.; Goodhue, W. D.

1987-01-01

Several demonstrated resonant tunneling devices including oscillators, mixers, multiplexers, and a variable negative resistance are discussed. Techniques of the millimeter/submillimeter regime are also discussed.

Biostimulation with diode laser positively regulates cementoblast functions, in vitro.

PubMed

Bozkurt, Serife Buket; Hakki, Erdogan E; Kayis, Seyit Ali; Dundar, Niyazi; Hakki, Sema S

2017-05-01

The aim of this study was to evaluate the effects of diode laser biostimulation on cementoblasts (OCCM.30). A total of 40 root plates were obtained from healthy third molar teeth and assigned to the following two groups: (1) control group and (2) laser-treated group. Root plates were placed into the cell culture inserts, and OCCM.30 cells were seeded onto root plates. Cells were irradiated with a low level of diode laser (power: 0.3 W in continuous wave, 60 s/cm 2 ). Proliferation and mineralized tissue-associated gene's and BMP's messenger RNA (mRNA) expressions of cementoblasts were evaluated. Total RNAs were isolated on day 3 and integrin-binding sialoprotein (Ibsp), bone gamma-carboxyglutamate protein (Bglap), Type I collagen (Col1a1), osteoblastic transcription factor, runt-related transcription factor (Runx2), and Bone Morphogenetic Protein (BMP)-2, 3, 4, 6, and 7 mRNA expressions were determined using quantitative RT-PCR. von Kossa staining was performed to evaluate biomineralization of OCCM.30 cells. In the proliferation experiment, while there was no significant difference until 96 h, laser irradiation retarded the decrease in cell proliferation trend after 96 h compared to the untreated control group. Statistically significant increase in Ibsp, Bglap, and BMP-2,3,6,7 mRNA expressions were noted in the laser groups when compared to the untreated control group (p < 0.05). Laser irradiation induced mineralized nodule formation of cementoblasts. The results of this study reveal that the biostimulation setting of diode laser modulates the behavior of cementoblasts inducing mineralized tissue-associated gene's mRNA expressions and mineralization. Therefore, biostimulation can be used during regenerative periodontal therapies to trigger cells with periodontal attachment apparatus.

On the Long-Term Stability of Microwave Radiometers Using Noise Diodes for Calibration

NASA Technical Reports Server (NTRS)

Brown, Shannon T.; Desai, Shailen; Lu, Wenwen; Tanner, Alan B.

2007-01-01

Results are presented from the long-term monitoring and calibration of the National Aeronautics and Space Administration Jason Microwave Radiometer (JMR) on the Jason-1 ocean altimetry satellite and the ground-based Advanced Water Vapor Radiometers (AWVRs) developed for the Cassini Gravity Wave Experiment. Both radiometers retrieve the wet tropospheric path delay (PD) of the atmosphere and use internal noise diodes (NDs) for gain calibration. The JMR is the first radiometer to be flown in space that uses NDs for calibration. External calibration techniques are used to derive a time series of ND brightness for both instruments that is greater than four years. For the JMR, an optimal estimator is used to find the set of calibration coefficients that minimize the root-mean-square difference between the JMR brightness temperatures and the on-Earth hot and cold references. For the AWVR, continuous tip curves are used to derive the ND brightness. For the JMR and AWVR, both of which contain three redundant NDs per channel, it was observed that some NDs were very stable, whereas others experienced jumps and drifts in their effective brightness. Over the four-year time period, the ND stability ranged from 0.2% to 3% among the diodes for both instruments. The presented recalibration methodology demonstrates that long-term calibration stability can be achieved with frequent recalibration of the diodes using external calibration techniques. The JMR PD drift compared to ground truth over the four years since the launch was reduced from 3.9 to - 0.01 mm/year with the recalibrated ND time series. The JMR brightness temperature calibration stability is estimated to be 0.25 K over ten days.

High-power diode laser in the circumvestibular incision for Le Fort I osteotomy in orthognathic surgery: a prospective case series study.

PubMed

Jaeger, Filipe; Chiavaioli, Gustavo Marques; de Toledo, Guilherme Lacerda; Freire-Maia, Belini; Amaral, Marcio Bruno Figueiredo; Mesquita, Ricardo Alves

2018-01-01

The incisions during orthognathic surgery are classically performed with conventional scalpel or electrocautery. Considering that the high-power diode laser surgery may provide advantages when compared to conventional incision techniques, the current study aimed to present a prospective case series of patients submitted to circumvestibular incision for Le Fort I osteotomy. Ten patients with dentofacial deformities who underwent to rapid assisted maxillary expansion or bimaxillary orthognathic surgery were enrolled in the study. All incisions were performed by a single surgeon using an 808-nm diode laser, with an optical fiber of 600 μm, at a power of 2.5 W, in a continuous-wave mode. The performance of the incision was evaluated by incision velocity, bleeding, edema, secondary infection, clinical healing, and pain. The velocity of the incision ranged from 0.10 to 0.20 mm/s (mean 0.13 ± 0.03 mm/s). Considering bleeding during the soft tissue incision, all surgeries were classified as absent bleeding. All patients presented a clinical healing of the surgical wound in a period that range from 3 to 5 weeks and experienced swelling during the follow-up period. On average, approximately 50% of the swelling had resolved after the third postoperative week, and 28.8% of swelling remained after 2 months after the surgery. The pain decreased after 2 and 3 days, and 90.0% of the patients reported no pain after 7 postoperative days. High-power diode laser is effective and safety during circumvestibular incisions for Le Fort I osteotomy in orthognathic surgery decreasing bleeding, surgery time, pain, and edema after orthognathic surgery.

940nm QCW diode laser bars with 70% efficiency at 1 kW output power at 203K: analysis of remaining limits and path to higher efficiency and power at 200K and 300K

NASA Astrophysics Data System (ADS)

Frevert, C.; Bugge, F.; Knigge, S.; Ginolas, A.; Erbert, G.; Crump, P.

2016-03-01

Both high-energy-class laser facilities and commercial high-energy pulsed laser sources require reliable optical pumps with the highest pulse power and electro-optical efficiency. Although commercial quasi-continuous wave (QCW) diode laser bars reach output powers of 300…500 W further improvements are urgently sought to lower the cost per Watt, improve system performance and reduce overall system complexity. Diode laser bars operating at temperatures of around 200 K show significant advances in performance, and are particularly attractive in systems that use cryogenically cooled solid state lasers. We present the latest results on 940 nm, passively cooled, 4 mm long QCW diode bars which operate under pulse conditions of 1.2 ms, 10 Hz at an output power of 1 kW with efficiency of 70% at 203 K: a two-fold increase in power compared to 300 K, without compromising efficiency. We discuss how custom low-temperature design of the vertical layers can mitigate the limiting factors such as series resistance while sustaining high power levels. We then focus on the remaining obstacles to higher efficiency and power, and use a detailed study of multiple vertical structures to demonstrate that the properties of the active region are a major performance limit. Specifically, one key limit to series resistance is transport in the layers around the active region and the differential internal efficiency is closely correlated to the threshold current. Tailoring the barriers around the active region and reducing transparency current density thus promise bars with increased performance at temperatures of 200 K as well as 300 K.

Prostate volume did not affect voiding function improvements in diode laser enucleation of the prostate.

PubMed

Yang, Stephen Shei-Dei; Hsieh, Cheng-Hsing; Chiang, I-Ni; Lin, Chia-Da; Chang, Shang-Jen

2013-03-01

We compared safety and surgical outcomes in patients with different prostate sizes treated with diode laser enucleation of the prostate. From 2008 to 2012 consecutive patients with benign prostatic obstruction undergoing diode laser prostate enucleation at our institution were enrolled for analysis. A single surgeon performed diode laser prostate enucleation with an end firing, continuous wave diode laser (980 nm). Based on preoperative prostate volume on transrectal ultrasound, patients were stratified into 2 groups, including group 1-65 with less than 60 ml and group 2-55 with 60 ml or greater. Baseline and perioperative characteristics, and postoperative surgical outcomes were compared between the 2 groups. A total of 120 men with a mean ± SD age of 70.2 ± 9.0 years were enrolled for analysis. Compared with group 1 patients, those in group 2 had larger mean total prostate volume (85.0 ± 24.6 vs 40.9 ± 10.8 ml), longer mean operative time (117.7 ± 48.2 vs 60.7 ± 25.0 minutes), higher mean retrieved prostate weight (37.3 ± 16.1 vs 12.5 ± 7.3 gm) and a higher mean tissue retrieval ratio (74.4% ± 22.2% vs 58.8% ± 23.2%, p <0.01). There was no significant difference in the postoperative hemoglobin decrease in the 2 groups (median 0.5 vs 0.9 mg/dl, p = 0.11). The rate of temporary postoperative urinary retention after Foley catheter removal was significantly lower in group 2 (15.4% vs 3.6%, p = 0.04). Postoperative improvements in the peak flow rate, post-void residual urine volume and International Prostate Symptom Score were comparable in the 2 groups. Although patients with a larger prostate required significantly longer operative time and laser energy, voiding function improvements and surgical complication rates of diode laser prostate enucleation were comparable in patients with a larger vs smaller prostate. Copyright © 2013 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

Antiferromagnetic spin current rectifier

NASA Astrophysics Data System (ADS)

Khymyn, Roman; Tiberkevich, Vasil; Slavin, Andrei

2017-05-01

It is shown theoretically, that an antiferromagnetic dielectric with bi-axial anisotropy, such as NiO, can be used for the rectification of linearly-polarized AC spin current. The AC spin current excites two evanescent modes in the antiferromagnet, which, in turn, create DC spin current flowing back through the antiferromagnetic surface. Spin diode based on this effect can be used in future spintronic devices as direct detector of spin current in the millimeter- and submillimeter-wave bands. The sensitivity of such a spin diode is comparable to the sensitivity of modern electric Schottky diodes and lies in the range 102-103 V/W for 30 ×30 nm2 structure.

A silicon technology for millimeter-wave monolithic circuits

NASA Astrophysics Data System (ADS)

Stabile, P. J.; Rosen, A.

1984-12-01

A silicon millimeter-wave integrated-circuit (SIMMWIC) technology that includes high-energy ion implantation and pulsed-laser annealing, secondary ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning has been developed. This technology has been applied to a SIMMWIC single-pole single-throw (SPST) switch and to IMPATT and p-i-n diode fabrication schemes. Thus, the SIMMWIC technology is a proven base for monolithic millimeter-wave sources and control circuit applications.

Laser Development for Gravitational-Wave Interferometry in Space

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2012-01-01

We are reporting on our development work on laser (master oscillator) and optical amplifier systems for gravitational-wave interferometry in space. Our system is based on the mature, wave-guided optics technologies, which have advantages over bulk, crystal-based, free-space optics. We are investing in a new type of compact, low-noise master oscillator, called the planar-waveguide external cavity diode laser. We made measurements, including those of noise, and performed space-qualification tests.

Self-contained sub-millimeter wave rectifying antenna integrated circuit

NASA Technical Reports Server (NTRS)

Siegel, Peter H. (Inventor)

2004-01-01

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Remote Powering and Steering of Self-Propelling Microdevices by Modulated Electric Field

NASA Astrophysics Data System (ADS)

Sharma, Rachita; Velev, Orlin

2011-03-01

We have demonstrated a new class of self-propelling particles based on semiconductor diodes powered by an external uniform alternating electric field. The millimeter-sized diodes floating in water rectify the applied voltage. The resulting particle-localized electroosmotic flux propels them in the direction of the cathode or the anode depending on their surface charge. These particles suggest solutions to problems facing self-propelling microdevices, and have potential for a range of additional functions. The next step in this direction is the steering of these devices. We will present a novel technique that allows on-demand steering of these self-propelling diodes. We control remotely their direction of motion by modifying the duty cycle of the applied AC field. The diodes change their direction of motion when a DC component (wave asymmetry) is introduced into the AC signal. The DC component leads to redistribution of the counterions near the diode surface. The electric field resulting from this counterion redistribution exerts a torque on the dipole across the diode, causing its rotation. Thus, the reversal of the direction of the electroosmotic flux caused by field asymmetry leads to reversal of the direction of diode motion. This new principle of steering of self-propelling diodes can find applications in MEMs and micro-robotics.

Design of a high efficiency relativistic backward wave oscillator with low guiding magnetic field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiaoze; Song, Wei; Tan, Weibing

2016-07-15

A high efficiency relativistic backward wave oscillator working at a low guiding magnetic field is designed and simulated. A trapezoidal resonant reflector is used to reduce the modulation field in the resonant reflector to avoid overmodulation of the electron beam which will lead to a large momentum spread and then low conversion efficiency. The envelope of the inner radius of the slow wave structure (SWS) increases stepwise to keep conformal to the trajectory of the electron beam which will alleviate the bombardment of the electron on the surface of the SWS. The length of period of the SWS is reducedmore » gradually to make a better match between phase velocity and electron beam, which decelerates continually and improves the RF current distribution. Meanwhile the modulation field is reduced by the introduction of nonuniform SWS also. The particle in cell simulation results reveal that a microwave with a power of 1.8 GW and a frequency of 14.7 GHz is generated with an efficiency of 47% when the diode voltage is 620 kV, the beam current 6.1 kA, and the guiding magnetic field 0.95 T.« less

Analysis and Design of a Novel W-band SPST Switch by Employing Full-Wave EM Simulator

NASA Astrophysics Data System (ADS)

Xu, Zhengbin; Guo, Jian; Qian, Cheng; Dou, Wenbin

2011-12-01

In this paper, a W-band single pole single throw (SPST) switch based on a novel PIN diode model is presented. The PIN diode is modeled using a full-wave electromagnetic (EM) simulator and its parasitic parameters under both forward and reverse bias states are described by a T-network. By this approach, the measurement-based model, which is usually a must for high performance switch design, is no longer necessary. A compensation structure is optimized to obtain a high isolation of the switch. Accordingly, a W-band SPST switch is designed using a full wave EM simulator. Measurement results agree very well with simulated ones. Our measurements show that the developed switch has less than 1.5 dB insertion loss under the `on' state from 88 GHz to 98 GHz. Isolation greater than 30 dB over 2 GHz bandwidth and greater than 20 dB over 5 GHz bandwidth can be achieved at the center frequency of 94 GHz under the `off' state.

Coherent THz light source based on photo-mixing with a UTC-PD and ASE-free tunable diode laser

NASA Astrophysics Data System (ADS)

Fukuoka, D.; Muro, K.; Noda, K.

2016-02-01

A terahertz (THz) photo-mixing with a THz wave photo-mixer module using a uni-traveling-carrier photodiode (UTCPD) and home-built 1 μm-band ASE-free tunable external-cavity diode lasers (ECDLs) provides a narrow-band (40 MHz) wide range (up to 4.5 THz) coherent tunable THz light source system. Obtained THz-waves reach 100 nW at 0.9 THz and 100 pW at 4.0 THz. The difference frequency between mixing lights can be tuned over 20 THz, and the frequency tuning has a resettability and an accuracy corresponding to the estimation error of FSR 270 MHz hollow-core etalon as a frequency calibrator, around 1 MHz/THz. Some of dips in the frequency dependence of THz-waves caused by water vaper absorption reach a noise floor of this system, so the dynamic range of this system is demonstrated at least 40 dB in power ratio.

Resonant tunneling assisted propagation and amplification of plasmons in high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhardwaj, Shubhendu; Sensale-Rodriguez, Berardi; Xing, Huili Grace

A rigorous theoretical and computational model is developed for the plasma-wave propagation in high electron mobility transistor structures with electron injection from a resonant tunneling diode at the gate. We discuss the conditions in which low-loss and sustainable plasmon modes can be supported in such structures. The developed analytical model is used to derive the dispersion relation for these plasmon-modes. A non-linear full-wave-hydrodynamic numerical solver is also developed using a finite difference time domain algorithm. The developed analytical solutions are validated via the numerical solution. We also verify previous observations that were based on a simplified transmission line model. Itmore » is shown that at high levels of negative differential conductance, plasmon amplification is indeed possible. The proposed rigorous models can enable accurate design and optimization of practical resonant tunnel diode-based plasma-wave devices for terahertz sources, mixers, and detectors, by allowing a precise representation of their coupling when integrated with other electromagnetic structures.« less

An 808-nm Diode Laser with a Flat-Top Handpiece Positively Photobiomodulates Mitochondria Activities.

PubMed

Amaroli, Andrea; Ravera, Silvia; Parker, Steven; Panfoli, Isabella; Benedicenti, Alberico; Benedicenti, Stefano

2016-11-01

Photobiomodulation is proposed as a non-linear process. Only the action of light at a low intensity and fluence is assumed to have stimulation on cells; whereas a higher light intensity and fluence generates negative effects, exhausting the cell's energy reserve as a consequence of a too strong stimulation. In our work, we detected the photobiomodulatory effect of an 808-nm higher-fluence diode laser [64 J/cm 2 -1 W, continuous wave (CW)] irradiated by a flat-top handpiece on mitochondria activities, such as oxygen consumption, activity of mitochondria complexes I, II, III, and IV, and cytochrome c as well as ATP synthesis. The experiments are performed by standard procedure on mitochondria purified from bovine liver. Our higher-fluence diode laser positively photobiomodulates the mitochondria oxygen consumption, the activity of the complexes III and IV, and the ATP production, with a P/O = 2.6. The other activities are not influenced. Our data show for the first time that even the higher fluences (64 J/cm 2 -1 W), similar to the low fluences, can photobiostimulate the mitochondria respiratory chain without uncoupling them and can induce an increment in the ATP production. These results suggest that the negative effects of higher fluences observed to date are not unequivocally due to higher fluence per se but might be a consequence of the irradiation carried by handpieces with a Gaussian profile.

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry

PubMed Central

2017-01-01

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples. PMID:28632988

Solid Sampling with a Diode Laser for Portable Ambient Mass Spectrometry.

PubMed

Yung, Yeni P; Wickramasinghe, Raveendra; Vaikkinen, Anu; Kauppila, Tiina J; Veryovkin, Igor V; Hanley, Luke

2017-07-18

A hand-held diode laser is implemented for solid sampling in portable ambient mass spectrometry (MS). Specifically, a pseudocontinuous wave battery-powered surgical laser diode is employed for portable laser diode thermal desorption (LDTD) at 940 nm and compared with nanosecond pulsed laser ablation at 2940 nm. Postionization is achieved in both cases using atmospheric pressure photoionization (APPI). The laser ablation atmospheric pressure photoionization (LAAPPI) and LDTD-APPI mass spectra of sage leaves (Salvia officinalis) using a field-deployable quadrupole ion trap MS display many similar ion peaks, as do the mass spectra of membrane grown biofilms of Pseudomonas aeruginosa. These results indicate that LDTD-APPI method should be useful for in-field sampling of plant and microbial communities, for example, by portable ambient MS. The feasibility of many portable MS applications is facilitated by the availability of relatively low cost, portable, battery-powered diode lasers. LDTD could also be coupled with plasma- or electrospray-based ionization for the analysis of a variety of solid samples.

Imaging of acoustic fields using optical feedback interferometry.

PubMed

Bertling, Karl; Perchoux, Julien; Taimre, Thomas; Malkin, Robert; Robert, Daniel; Rakić, Aleksandar D; Bosch, Thierry

2014-12-01

This study introduces optical feedback interferometry as a simple and effective technique for the two-dimensional visualisation of acoustic fields. We present imaging results for several pressure distributions including those for progressive waves, standing waves, as well as the diffraction and interference patterns of the acoustic waves. The proposed solution has the distinct advantage of extreme optical simplicity and robustness thus opening the way to a low cost acoustic field imaging system based on mass produced laser diodes.

Effect of hole transport on performance of infrared type-II superlattice light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Youxi; Suchalkin, Sergey; Kipshidze, Gela

2015-04-28

The effect of hole transport on the performance of infrared light emitting diodes (LED) was investigated. The active area of the LEDs comprised two type-II superlattices with different periods and widths connected in series. Electroluminescence spectra of the devices with different positions of long wave and mid wave superlattice sections were mostly contributed by the superlattice closest to the p-contact. The experimental results indicate that due to suppressed vertical hole transport, the recombination of electrically injected electrons and holes in a type II superlattice LED active region takes place within a few superlattice periods near p-barrier. Possible reason for themore » effect is reduction of hole diffusion coefficient in an active area of a superlattice LED under bias.« less

Broadband non-reciprocal transmission of sound with invariant frequency

PubMed Central

Gu, Zhong-ming; Hu, Jie; Liang, Bin; Zou, Xin-ye; Cheng, Jian-chun

2016-01-01

We design and experimentally demonstrate a broadband yet compact acoustic diode (AD) by using an acoustic nonlinear material and a pair of gain and lossy materials. Due to the capabilities of maintaining the original frequency and high forward transmission while blocking backscattered wave, our design is closer to the desired features of a perfect AD and is promising to play the essential diode-like role in realistic acoustic systems, such as ultrasound imaging, noise control and nondestructive testing. Furthermore, our design enables improving the sensitivity and the robustness of device simultaneously by tailoring an individual structural parameter. We envision our design will take a significant step towards the realization of applicable acoustic one-way devices, and inspire the research of non-reciprocal wave manipulation in other fields. PMID:26805712

Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

NASA Technical Reports Server (NTRS)

Mehdi, Imran; Mazed, Mohammad; Siegel, Peter; Smith, R. Peter

1995-01-01

Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

Three-dimensional dynamics of temperature fields in phantoms and biotissue under IR laser photothermal therapy using gold nanoparticles and ICG dye

NASA Astrophysics Data System (ADS)

Akchurin, Georgy G.; Garif, Akchurin G.; Maksimova, Irina L.; Skaptsov, Alexander A.; Terentyuk, Georgy S.; Khlebtsov, Boris N.; Khlebtsov, Nikolai G.; Tuchin, Valery V.

2010-02-01

We describe applications of silica (core)/gold (shell) nanoparticles and ICG dye to photothermal treatment of phantoms, biotissue and spontaneous tumor of cats and dogs. The laser irradiation parameters were optimized by preliminary experiments with laboratory rats. Three dimensional dynamics of temperature fields in tissue and solution samples was measured with a thermal imaging system. It is shown that the temperature in the volume region of nanoparticles localization can substantially exceed the surface temperature recorded by the thermal imaging system. We have demonstrated effective optical destruction of cancer cells by local injection of plasmon-resonant gold nanoshells and ICG dye followed by continuous wave (CW) diode laser irradiation at wavelength 808 nm.

10 kHz ps 1342 nm laser generation by an electro-optically cavity-dumped mode-locked Nd:YVO4 laser

NASA Astrophysics Data System (ADS)

Chen, Ying; Liu, Ke; He, Li-jiao; Yang, Jing; Zong, Nan; Yang, Feng; Gao, Hong-wei; Liu, Zhao; Yuan, Lei; Lan, Ying-jie; Bo, Yong; Peng, Qin-jun; Cui, Da-fu; Xu, Zu-yan

2017-01-01

We have demonstrated an electro-optically cavity-dumped mode-locked (CDML) picosecond Nd:YVO4 laser at 1342 nm with 880 nm diode-laser direct pumping. At a repetition rate of 10 kHz, an average output power of 0.119 W was achieved, corresponding to a pulse energy of 11.9 μJ. Compared with the continuous wave mode-locking pulse energy of 17.5 nJ, the CDML pulse energy was 680 times higher. The pulse width was measured to be 33.4 ps, resulting in the peak power of 356 kW. Meanwhile, the beam quality was nearly diffraction limited with an average beam quality factor M2 of 1.29.

Highly-efficient mid-infrared CW laser operation in a lightly-doped 3 at.% Er:SrF2 single crystal.

PubMed

Su, Liangbi; Guo, Xinsheng; Jiang, Dapeng; Wu, Qinghui; Qin, Zhipeng; Xie, Guoqiang

2018-03-05

3 at.% Er:SrF 2 laser crystals with high optical quality were successfully grown using the temperature gradient technique (TGT). The intense mid-infrared emission was observed around 2.7 μm with excitation by a 970 nm LD. Based on the Judd-Ofelt theory, the emission cross-sections of the 4 I 13/2 - 4 I 11/2 transition were calculated by using the Fuchtbauer-Ladenburg (FL) method. Efficient continuous-wave laser operation at 2.8 µm was achieved with the lightly-doped 3 at.% Er:SrF 2 crystal pumped by a 970 nm laser diode. The laser output power reached up to 1.06 W with a maximum slope efficiency of 26%.

Effect of laser irradiation on the structural, morphological and electrical properties of polycrystalline TiO2 thin films

NASA Astrophysics Data System (ADS)

Khan, M. I.; Ali, Asghar

TiO2 thin film is deposited on glass substrate by sol-gel dip coating technique. After deposition, films were irradiated by continuous wave (CW) diode laser at an angle of 45°. XRD shows both the anatase and brookite phases of TiO2. Nano particles of regular and control sizes are appeared in SEM micrographs. Therefore, shape and size of nano particles can be control by using Laser irradiation. The average sheet resistivity of TiO2 thin film irradiated by 0, 2, 4 and 6 min are 6.72 × 105, 5.32 × 105, 3.44 × 105 and 4.95 × 105 (ohm-m) respectively, according to four point probe.

High-Power Single- and Dual-Wavelength Nd:GdVO4 Lasers with Potential Application for the Treatment of Telangiectasia

NASA Astrophysics Data System (ADS)

Chen, Lijuan; Wang, Zhengping; Yu, Haohai; Zhuang, Shidong; Han, Shuo; Zhao, Yongguang; Xu, Xinguang

2012-11-01

Diode-end-pumped high-power Nd:GdVO4 lasers at 1083 nm are presented. The maximum continuous-wave output power was 10.1 W with an optical conversion efficiency of 31.3%. For acoustooptic (AO) Q-switched operation, the largest pulse energy, shortest pulse width, and highest peak power were 111 µJ, 77 ns, and 1.44 kW, respectively. By decreasing the 1063 nm transmission of the output coupler, we also achieved efficient CW dual-wavelength operation at 1083 and 1063 nm. Their total output power reached 6.7 W, and the optical conversion efficiency reached 31.6%. These lasers have special requirements in the treatment of facial telangiectasia.

Fine wavelength control in 1.3 μm Nd:YAG lasers by electro-optical crystal lens

NASA Astrophysics Data System (ADS)

Lü, Yanfei; Zhang, Jing; Liu, Huilong; Xia, Jing; Fu, Xihong; Zhang, Anfeng

2014-02-01

A diode-pumped tunable and multi-wavelength continuous-wave Nd:YAG laser based on the 4F3/2-4I13/2 transition has been demonstrated for the first time. The combination of the glass plane positioned at the Brewster angle and the electro-optical crystal KH2PO4 (KDP) lens formed a Lyot filter in the cavity and compressed the available gain bandwidth. With an adjustable voltage applied to the KDP crystal lens, the laser wavelength could be tuned from 1333.8 to 1338.2 nm. Moreover, we can also realize cw dual-wavelength and triple-wavelength lasers with smaller wavelength separation by adjusting the free spectral range of the Lyot filter.

Separating hyperfine from spin-orbit interactions in organic semiconductors by multi-octave magnetic resonance using coplanar waveguide microresonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, G.; Miller, R.; Ogden, L.

2016-09-05

Separating the influence of hyperfine from spin-orbit interactions in spin-dependent carrier recombination and dissociation processes necessitates magnetic resonance spectroscopy over a wide range of frequencies. We have designed compact and versatile coplanar waveguide resonators for continuous-wave electrically detected magnetic resonance and tested these on organic light-emitting diodes. By exploiting both the fundamental and higher-harmonic modes of the resonators, we cover almost five octaves in resonance frequency within a single setup. The measurements with a common π-conjugated polymer as the active material reveal small but non-negligible effects of spin-orbit interactions, which give rise to a broadening of the magnetic resonance spectrummore » with increasing frequency.« less

Laser tissue welding mediated with a protein solder

NASA Astrophysics Data System (ADS)

Small, Ward, IV; Heredia, Nicholas J.; Celliers, Peter M.; Da Silva, Luiz B.; Eder, David C.; Glinsky, Michael E.; London, Richard A.; Maitland, Duncan J.; Matthews, Dennis L.; Soltz, Barbara A.

1996-05-01

A study of laser tissue welding mediated with an indocyanine green dye-enhanced protein solder was performed. Freshly obtained sections of porcine artery were used for the experiments. Sample arterial wall thickness ranged from two to three millimeters. Incisions approximately four millimeters in length were treated using an 805 nanometer continuous- wave diode laser coupled to a one millimeter diameter fiber. Controlled parameters included the power delivered by the laser, the duration of the welding process, and the concentration of dye in the solder. A two-color infrared detection system was constructed to monitor the surface temperatures achieved at the weld site. Burst pressure measurements were made to quantify the strengths of the welds immediately following completion of the welding procedure.

Wavelength locking of CW and Q-switched Er(3+) microchip lasers to acetylene absorption lines using pump-power modulation.

PubMed

Brunel, Marc; Vallet, Marc

2007-02-19

We show that modulating the diode-pump power of a microchip solid-state laser enables to lock its wavelength to a reference molecular line. The method is applied to two different types of Er,Yb:glass monolithic microchip lasers operating at 1.53 microm. First, wavelength locking of a continuous-wave dual-polarization microchip laser to acetylene absorption lines is demonstrated, without using any additional modulator, internal or external. We then show that, remarkably, this simple method is also suitable for stabilizing a passively Q-switched microchip laser. A pulsed wavelength stability of 10(-8) over 1 hour is readily observed. Applications to lidars and to microwave photonics are discussed.

Injection-seeded tunable mid-infrared pulses generated by difference frequency mixing

NASA Astrophysics Data System (ADS)

Miyamoto, Yuki; Hara, Hideaki; Masuda, Takahiko; Hiraki, Takahiro; Sasao, Noboru; Uetake, Satoshi

2017-03-01

We report on the generation of nanosecond mid-infrared pulses having frequency tunability, a narrow linewidth, and a high pulse energy. These pulses are obtained by frequency mixing between injection-seeded near-infrared pulses in potassium titanyl arsenate crystals. A continuous-wave external cavity laser diode or a Ti:sapphire ring laser is used as a tunable seeding source for the near-infrared pulses. The typical energy of the generated mid-infrared pulses is in the range of 0.4-1 mJ/pulse. The tuning wavelength ranges from 3142 to 4806 nm. A narrow linewidth of 1.4 GHz and good frequency reproducibility of the mid-infrared pulses are confirmed by observing a rovibrational absorption line of gaseous carbon monoxide at 4587 nm.

LOGARITHMIC AMPLIFIER

DOEpatents

Wade, E.J.; Stone, R.S.

1959-03-10

Electronic,amplifier circuits, especially a logai-ithmic amplifier characterizxed by its greatly improved strability are discussed. According to the in ention, means are provided to feed bach the output valtagee to a diode in the amplifier input circuit, the diode being utilized to produce the logarithmic characteristics. The diode is tics, The diode isition therewith and having its filament operated from thc same source s the filament of the logarithmic diode. A bias current of relatively large value compareii with the signal current is continuously passed through the compiting dioie to render the diode insensitivy to variations in the signal current. by this odes kdu to variaelled, so that the stability of the amlifier will be unimpaired.

Télèmetre utilisant une diode laser à balayage continu en fréquence et un double interférométre

NASA Astrophysics Data System (ADS)

Hafidi, Abdeslam; Pfeiffer, Pierre; Meyrueis, Patrick

2018-04-01

This paper, "Télèmetre utilisant une diode laser à balayage continu en fréquence et un double interférométre," was presented as part of International Conference on Space Optics—ICSO 1997, held in Toulouse, France.

Comparative study on cw mode versus pulsed mode in AlGaAs-diode lasers

NASA Astrophysics Data System (ADS)

Neckel, Claus P.

2001-04-01

In the last six years AlGaAs-Diodelasers have become more and more popular. Due to their small size, their good electro-optical coupling and delicate glass fibers this type of laser fits into most dental offices. The first diode lasers and still most of the devices still on the market work in a continuos wave mode or in a gated mode up to 50 Hz. Using this setting high temperatures in the tissue are inevitable. In this randomized study we tried to evaluate the difference in clinical cutting efficiency, post operative outcome and the histological findings of the excisional biopsies using a new diode laser Ora-laser Jet 20.

Modulated and continuous-wave operations of low-power thulium (Tm:YAP) laser in tissue welding

NASA Astrophysics Data System (ADS)

Bilici, Temel; Tabakoğlu, Haşim Özgür; Topaloğlu, Nermin; Kalaycıoğlu, Hamit; Kurt, Adnan; Sennaroglu, Alphan; Gülsoy, Murat

2010-05-01

Our aim is to explore the welding capabilities of a thulium (Tm:YAP) laser in modulated and continuous-wave (CW) modes of operation. The Tm:YAP laser system developed for this study includes a Tm:YAP laser resonator, diode laser driver, water chiller, modulation controller unit, and acquisition/control software. Full-thickness incisions on Wistar rat skin were welded by the Tm:YAP laser system at 100 mW and 5 s in both modulated and CW modes of operation (34.66 W/cm2). The skin samples were examined during a 21-day healing period by histology and tensile tests. The results were compared with the samples closed by conventional suture technique. For the laser groups, immediate closure at the surface layers of the incisions was observed. Full closures were observed for both modulated and CW modes of operation at day 4. The tensile forces for both modulated and CW modes of operation were found to be significantly higher than the values found by conventional suture technique. The 1980-nm Tm:YAP laser system operating in both modulated and CW modes maximizes the therapeutic effect while minimizing undesired side effects of laser tissue welding. Hence, it is a potentially important alternative tool to the conventional suturing technique.

940  mW 1564  nm multi-longitudinal-mode and 440  mW 1537  nm single-longitudinal-mode continuous-wave Er:Yb:Lu2Si2O7 microchip lasers.

PubMed

Huang, Jianhua; Chen, Yujin; Lin, Yanfu; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-04-15

An Er:Yb:Lu 2 Si 2 O 7 microchip laser was constructed by placing a 1.2 mm thick, Y-cut Er:Yb:Lu 2 Si 2 O 7 microchip between two 1.2 mm thick sapphire crystals, in which input and output mirrors were directly deposited onto one face of each crystal. End-pumped by a continuous-wave 975.4 nm diode laser, a 1564 nm multi-longitudinal-mode laser with a maximum output power of 940 mW and slope efficiency of 20% was realized at an absorbed pump power of 5.5 W when the transmission of output mirror was 2.2%. When the transmission of the output mirror was increased to 6%, a 1537 nm single-longitudinal-mode laser with a maximum output power of 440 mW and slope efficiency of 12% was realized at an absorbed pump power of 4.3 W. The results indicate that the Er:Yb:Lu 2 Si 2 O 7 crystal is a promising microchip gain medium to realize a single-longitudinal-mode laser.

Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

PubMed

Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-01-08

A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

Blue 450nm high power semiconductor continuous wave laser bars exceeding rollover output power of 80W

NASA Astrophysics Data System (ADS)

König, H.; Lell, A.; Stojetz, B.; Ali, M.; Eichler, C.; Peter, M.; Löffler, A.; Strauss, U.; Baumann, M.; Balck, A.; Malchus, J.; Krause, V.

2018-02-01

Industrial material processing like cutting or welding of metals is rather energy efficient using direct diode or diode pumped solid state lasers. However, many applications cannot be addressed by established infrared laser technology due to fundamental material properties of the workpiece: For example materials like copper or gold have too low absorption in the near infrared wavelength range to be processed efficiently by use of existing high power laser systems. The huge interest to enable high power kW systems with more suitable wavelengths in the blue spectral range triggered the German funded research project 'BLAULAS': Therein the feasibility and capability of CW operating high power laser bars based on the GaN material system was investigated by Osram and Laserline. High performance bars were enabled by defeating fundamental challenges like material quality as well as the chip processes, both of which differ significantly from well-known IR laser bars. The research samples were assembled on actively cooled heat sinks with hard solder technology. For the first time an output power of 98W per bar at 60A drive current was achieved. Conversion efficiency as high as 46% at 50W output power was demonstrated.

Comparative study of diode-pumped alkali vapor laser and exciplex-pumped alkali laser systems and selection principal of parameters

NASA Astrophysics Data System (ADS)

Huang, Wei; Tan, Rongqing; Li, Zhiyong; Han, Gaoce; Li, Hui

2017-03-01

A theoretical model based on common pump structure is proposed to analyze the output characteristics of a diode-pumped alkali vapor laser (DPAL) and XPAL (exciplex-pumped alkali laser). Cs-DPAL and Cs-Ar XPAL systems are used as examples. The model predicts that an optical-to-optical efficiency approaching 80% can be achieved for continuous-wave four- and five-level XPAL systems with broadband pumping, which is several times the pumped linewidth for DPAL. Operation parameters including pumped intensity, temperature, cell's length, mixed gas concentration, pumped linewidth, and output coupler are analyzed for DPAL and XPAL systems based on the kinetic model. In addition, the predictions of selection principal of temperature and cell's length are also presented. The concept of the equivalent "alkali areal density" is proposed. The result shows that the output characteristics with the same alkali areal density but different temperatures turn out to be equal for either the DPAL or the XPAL system. It is the areal density that reflects the potential of DPAL or XPAL systems directly. A more detailed analysis of similar influences of cavity parameters with the same areal density is also presented.

The effect of a 980 nm diode laser with different parameters of irradiation on the bond strength of fiberglass posts.

PubMed

Garcia, Lucas da Fonseca Roberti; Naves, Lucas Zago; Farina, Ana Paula; Walker, Cristiane Mezzena; Consani, Simonides; Pires-de-Souza, Fernanda de Carvalho Panzeri

2011-01-01

The aim of this study was to assess bond strength of fiberglass posts to root canal dentin irradiated with a 980 nm diode laser at different parameters of power and frequency. Fifty human maxillary canines were separated into five groups (n = 10) according to the following parameters of laser power and frequency: Group 1 (1.5 W/100 Hz), Group 2 (1.5 W/continuous wave [CW]), Group 3 (3.0 W/100 Hz), Group 4 (3.0 W/CW), and Group 5 (no irradiation). Following post cementation, samples underwent a push-out test (0.5 mm/min); next, fracture analysis was performed with a light microscope at 50x and 100x magnification. All of the irradiated groups had increased bond strength values compared to the nonirradiated group. Groups 1 and 2 demonstrated the highest bond strength values; however, statistically significant differences were observed for only the cervical third of Group 4 and the cervical/apical thirds of Group 5. Fracture analysis showed a predominance of mixed failures for Groups 1 and 2 and adhesive failures between dentin and cement for the other groups.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22  μm.

PubMed

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; Kipshidze, Gela; Stein, Aaron; Lu, Ming; Belenky, Gregory

2017-11-01

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ∼5-μm-wide ridge with ∼5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1  cm -1 . The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFB lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. The devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.

GaN-based superluminescent diodes with long lifetime

NASA Astrophysics Data System (ADS)

Castiglia, A.; Rossetti, M.; Matuschek, N.; Rezzonico, R.; Duelk, M.; Vélez, C.; Carlin, J.-F.; Grandjean, N.

2016-02-01

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their reliability. Optimized doping levels allow decreasing the operating voltage on single-mode devices from more than 6 V to less than 5 V for an injection current of 100 mA. Furthermore, maximum output powers as high as 350 mW (for an injection current of 500 mA) have been achieved in continuous-wave operation (CW) at room temperature. Modules with standard and optimized p-type layers were finally tested in terms of lifetime, at a constant output power of 10 mW, in CW operation and at a case temperature of 25 °C. The modules with non-optimized p-type doping showed a fast and remarkable increase in the drive current during the first hundreds of hours together with an increase of the device series resistance. No degradation of the electrical characteristics was observed over 2000 h on devices with optimized p-type layers. The estimated lifetime for those devices was longer than 5000 h.

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

Concept for power scaling second harmonic generation using a cascade of nonlinear crystals.

PubMed

Hansen, A K; Tawfieq, M; Jensen, O B; Andersen, P E; Sumpf, B; Erbert, G; Petersen, P M

2015-06-15

Within the field of high-power second harmonic generation (SHG), power scaling is often hindered by adverse crystal effects such as thermal dephasing arising from the second harmonic (SH) light, which imposes limits on the power that can be generated in many crystals. Here we demonstrate a concept for efficient power scaling of single-pass SHG beyond such limits using a cascade of nonlinear crystals, in which the first crystal is chosen for high nonlinear efficiency and the subsequent crystal(s) are chosen for power handling ability. Using this highly efficient single-pass concept, we generate 3.7 W of continuous-wave diffraction-limited (M(2)=1.25) light at 532 nm from 9.5 W of non-diffraction-limited (M(2)=7.7) light from a tapered laser diode, while avoiding significant thermal effects. Besides constituting the highest SH power yet achieved using a laser diode, this demonstrates that the concept successfully combines the high efficiency of the first stage with the good power handling properties of the subsequent stages. The concept is generally applicable and can be expanded with more stages to obtain even higher efficiency, and extends also to other combinations of nonlinear media suitable for other wavelengths.

Systematic characterization of a 1550 nm microelectromechanical (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) with 7.92 THz tuning range for terahertz photomixing systems

NASA Astrophysics Data System (ADS)

Haidar, M. T.; Preu, S.; Cesar, J.; Paul, S.; Hajo, A. S.; Neumeyr, C.; Maune, H.; Küppers, F.

2018-01-01

Continuous-wave (CW) terahertz (THz) photomixing requires compact, widely tunable, mode-hop-free driving lasers. We present a single-mode microelectromechanical system (MEMS)-tunable vertical-cavity surface-emitting laser (VCSEL) featuring an electrothermal tuning range of 64 nm (7.92 THz) that exceeds the tuning range of commercially available distributed-feedback laser (DFB) diodes (˜4.8 nm) by a factor of about 13. We first review the underlying theory and perform a systematic characterization of the MEMS-VCSEL, with particular focus on the parameters relevant for THz photomixing. These parameters include mode-hop-free CW tuning with a side-mode-suppression-ratio >50 dB, a linewidth as narrow as 46.1 MHz, and wavelength and polarization stability. We conclude with a demonstration of a CW THz photomixing setup by subjecting the MEMS-VCSEL to optical beating with a DFB diode driving commercial photomixers. The achievable THz bandwidth is limited only by the employed photomixers. Once improved photomixers become available, electrothermally actuated MEMS-VCSELs should allow for a tuning range covering almost the whole THz domain with a single system.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Tao; Hosoda, Takashi; Shterengas, Leon

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated in this paper. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ~5-μm-wide ridge with ~5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1 cm -1. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFBmore » lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. Finally, the devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.« less

Temperature-dependent spectroscopy and microchip laser operation of Nd:KGd(WO4)2

NASA Astrophysics Data System (ADS)

Loiko, P.; Yoon, S. J.; Serres, J. M.; Mateos, X.; Beecher, S. J.; Birch, R. B.; Savitski, V. G.; Kemp, A. J.; Yumashev, K.; Griebner, U.; Petrov, V.; Aguiló, M.; Díaz, F.; Mackenzie, J. I.

2016-08-01

High-resolution absorption and stimulated-emission cross-section spectra are presented for monoclinic Nd:KGd(WO4)2 (Nd:KGW) laser crystals in the temperature range 77-450 K. At room-temperature, the maximum stimulated emission cross-section is σSE = 21.4 × 10-20 cm2 at 1067.3 nm, for light polarization E || Nm. The lifetime of the 4F3/2 state of Nd3+ in KGW is practically temperature independent at 115 ± 5 μs. Measurement of the energy transfer upconversion parameter for a 3 at.% Nd:KGW crystal proved that this was significantly smaller than for alternative hosts, ∼2.5 × 10-17 cm3/s. When cut along the Ng optical indicatrix axis, the Nd:KGW crystal was configured as a microchip laser, generating ∼4 W of continuous-wave output at 1067 nm with a slope efficiency of 61% under diode-pumping. Using a highly-doped (10 at.%) Nd:KGW crystal, the slope efficiency reached 71% and 74% when pumped with a laser diode and a Ti:Sapphire laser, respectively. The concept of an ultrathin (250 μm) Nd:KGW microchip laser sandwiched between two synthetic diamond heat-spreaders is demonstrated.

Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 3.22 μm

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-10-18

The laterally coupled distributed feedback (LC-DFB) GaSb-based type-I quantum well cascade diode lasers using the second- and the sixth-order gratings to stabilize the output spectrum near 3.22 μm were designed and fabricated in this paper. The laser heterostructure contained three cascades. The devices were manufactured using a single dry etching step defining the ~5-μm-wide ridge with ~5-μm-wide gratings sections adjacent to the ridge sides. The grating coupling coefficients were estimated to be about 1 cm -1. The stability of the single-frequency operation was ensured by alignment of the DFB mode to the relatively wide gain peak. The 2-mm-long second-order LC-DFBmore » lasers generated above 10 mW of continuous-wave (CW) output power at 20°C in epi-side-up configuration and demonstrated power conversion efficiency above 2%. The sixth-order LC-DFB lasers showed lower efficiency but still generated several milliwatts of CW output power. Finally, the devices demonstrated a CW current tuning range of about 3.5 nm at the temperature of 20°C.« less

Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing

NASA Astrophysics Data System (ADS)

Noguchi, Takashi; Chen, Yi; Miyahira, Tomoyuki; de Dieu Mugiraneza, Jean; Ogino, Yoshiaki; Iida, Yasuhiro; Sahota, Eiji; Terao, Motoyasu

2010-03-01

Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous Si film was performed to obtain a film containing uniform polycrystalline silicon (poly-Si) grains as a low temperature poly-Si (LTPS) process used for thin-film transistor (TFT). By adopting continuous wave (CW) mode at the 445 nm wavelength of the BLDA system, the light beam is efficiently absorbed into the thin amorphous silicon film of 50 nm thickness and can be crystallized stably. By adjusting simply the laser power below 6 W with controlled beam shape, the isotropic Si grains from uniform micro-grains to arbitral grain size of polycrystalline phase can be obtained with reproducible by fixing the scan speed at 500 mm/s. As a result of analysis using electron microscopy and atomic force microscopy (AFM), uniform distributed micro-poly-Si grains of smooth surface were observed at a power condition below 5 W and the preferred crystal orientation of (111) face was confirmed. As arbitral grain size can be obtained stably and reproducibly merely by controlling the laser power, BLDA is promising as a next-generation LTPS process for AM OLED panel including a system on glass (SoG).

Laser biostimulation therapy planning supported by imaging

NASA Astrophysics Data System (ADS)

Mester, Adam R.

2018-04-01

Ultrasonography and MR imaging can help to identify the area and depth of different lesions, like injury, overuse, inflammation, degenerative diseases. The appropriate power density, sufficient dose and direction of the laser treatment can be optimally estimated. If required minimum 5 mW photon density and required optimal energy dose: 2-4 Joule/cm2 wouldn't arrive into the depth of the target volume - additional techniques can help: slight compression of soft tissues can decrease the tissue thickness or multiple laser diodes can be used. In case of multiple diode clusters light scattering results deeper penetration. Another method to increase the penetration depth is a second pulsation (in kHz range) of laser light. (So called continuous wave laser itself has inherent THz pulsation by temporal coherence). Third solution of higher light intensity in the target volume is the multi-gate technique: from different angles the same joint can be reached based on imaging findings. Recent developments is ultrasonography: elastosonography and tissue harmonic imaging with contrast material offer optimal therapy planning. While MRI is too expensive modality for laser planning images can be optimally used if a diagnostic MRI already was done. Usual DICOM images offer "postprocessing" measurements in mm range.

Coherent cavity-enhanced dual-comb spectroscopy

PubMed Central

Fleisher, Adam J.; Long, David A.; Reed, Zachary D.; Hodges, Joseph T.; Plusquellic, David F.

2016-01-01

Dual-comb spectroscopy allows for the rapid, multiplexed acquisition of high-resolution spectra without the need for moving parts or low-resolution dispersive optics. This method of broadband spectroscopy is most often accomplished via tight phase locking of two mode-locked lasers or via sophisticated signal processing algorithms, and therefore, long integration times of phase coherent signals are difficult to achieve. Here we demonstrate an alternative approach to dual-comb spectroscopy using two phase modulator combs originating from a single continuous-wave laser capable of > 2 hours of coherent real-time averaging. The dual combs were generated by driving the phase modulators with step-recovery diodes where each comb consisted of > 250 teeth with 203 MHz spacing and spanned > 50 GHz region in the near-infrared. The step-recovery diodes are passive devices that provide low-phase-noise harmonics for efficient coupling into an enhancement cavity at picowatt optical powers. With this approach, we demonstrate the sensitivity to simultaneously monitor ambient levels of CO2, CO, HDO, and H2O in a single spectral region at a maximum acquisition rate of 150 kHz. Robust, compact, low-cost and widely tunable dual-comb systems could enable a network of distributed multiplexed optical sensors. PMID:27409866

Relativistic backward wave oscillator operating in TM02 with cutoff-type resonant reflector

NASA Astrophysics Data System (ADS)

Teng, Yan; Shi, Yanchao; Yang, Dewen; Cao, Yibing; Zhang, Zhijun

2017-04-01

This paper proposes an overmoded relativistic backward wave oscillator (RBWO) operating in the TM02 mode with the cutoff-type resonant reflector characterized by the advantages of the cutoff neck and the single resonant cavity. In order to protect the explosive emission of the annular cathode from the disturbance of the microwave leakage, the cutoff-type resonant reflector can effectively prevent the microwave consisting of several modes from propagating into the diode region. Attributed to the strong reflections caused by the cutoff-type resonant reflector at the front end of the overmoded slow-wave structure (SWS), the overmoded RBWO works in the state of the strong resonance, which enhances the beam-to-microwave power conversion efficiency. TM02 is selected as the operation mode so as to increase the power handling capability. The nonuniform SWS depresses the cross-excitation of the unwanted longitudinal modes of TM02 and improves the synchronous interaction between the electron beam and the structure wave. It is found that when we make the peak values of the longitudinal electric field and the modulated current appear nearly at the same position in the overmoded SWS by optimizing the electrodynamic structure, the conversion efficiency will be enhanced significantly. In the numerical simulation, the microwave generation with power 2.99 GW and efficiency 0.45 is obtained under the diode voltage 851 kV and current 7.8 kA with the guide magnetic field of 4.3 T. The microwave generation with the pure frequency spectrum of 10.083 GHz radiates in the TM01 mode. The conversion efficiency keeps above 0.40 over the diode voltage range of 220 kV.

Rogue waves in a multistable system.

PubMed

Pisarchik, Alexander N; Jaimes-Reátegui, Rider; Sevilla-Escoboza, Ricardo; Huerta-Cuellar, G; Taki, Majid

2011-12-30

Clear evidence of rogue waves in a multistable system is revealed by experiments with an erbium-doped fiber laser driven by harmonic pump modulation. The mechanism for the rogue wave formation lies in the interplay of stochastic processes with multistable deterministic dynamics. Low-frequency noise applied to a diode pump current induces rare jumps to coexisting subharmonic states with high-amplitude pulses perceived as rogue waves. The probability of these events depends on the noise filtered frequency and grows up when the noise amplitude increases. The probability distribution of spike amplitudes confirms the rogue wave character of the observed phenomenon. The results of numerical simulations are in good agreement with experiments.

Endoscopic cystoventriculostomy and ventriculocysternostomy using a recently developed 2.0-micron fiber-guided high-power diode-pumped solid state laser in children with hydrocephalus

NASA Astrophysics Data System (ADS)

Ludwig, Hans C.; Kruschat, Thomas; Knobloch, Torsten; Rostasy, Kevin; Buchfelder, Michael

2005-04-01

Preterm infants have a high incidence of post hemorrhagic or post infectious hydrocephalus often associated with ventricular or arachnoic cysts which carry a high risk of entrapment of cerebrospinal fluid (CSF). In these cases fenestration and opening of windows within the separating membranes are neurosurgical options. Although Nd:YAG- and diode-lasers have already been used in neuroendoscopic procedures, neurosurgeons avoid the use of high energy lasers in proximity to vital structures because of potential side effects. We have used a recently developed diode pumped solid state (DPSS) laser emitting light at a wavelength of 2.0 μm (Revolix TM LISA laser products, Katlenburg, Germany), which can be delivered through silica fibres towards endoscopic targets. From July 2002 until June 2004 fourteen endoscopic procedures in 12 consecutive patients (age 3 months to 12 years old) were performed. Most children suffered from complex post hemorrhagic and post infectious hydrocephalus, in whom ventriculoperitoneal shunt devices failed to restore a CSF equilibrium due to entrapment of CSF pathways by the cysts. We used two different endoscopes, a 6 mm Neuroendoscope (Braun Aesculap, Melsungen, Germany; a 4 mm miniature Neuroscope (Storz, Tuttlingen, Germany). The endoscopes were connected to a standard camera and TV monitor, the laser energy was introduced through a 365 μm core diameter bare ended silica fibre (PercuFib, LISA laser products, Katlenburg, Germany) through the endoscope"s working channel. The continuous wave laser was operated at power levels from 5 to 15 Watt in continuous and chopped mode. The frequency of the laser in chopped mode was varied between 5 and 20 Hz. All patients tolerated the procedure well. No immediate or long term side effects were noted. In 3 patients with cystic compression of the 4th ventricle, insertion of a shunt device could be avoided. The authors conclude that the use of the new RevolixTM laser enables safe and effective procedures in neuroendoscopy.

Radiation-acoustic treatment of gallium phosphide light diodes

NASA Astrophysics Data System (ADS)

Tartachnik, Volodimir P.; Gontaruk, Olexsandr M.; Vernydub, Roman M.; Kryvutenko, Anatoly M.; Olikh, Yaroslav M.; Opilat, Vitalij Y.; Petrenko, Igor V.; Pinkovska, Myroslava B.

1999-11-01

The ultrasound influence on the defects of technological and radiation origin of GaP light diodes has been investigated. GaP light diodes were treated by ultrasound wave in different operating modes. Electroluminescence spectra were measured at room and low temperatures, integrated luminosity of devices was checked by solar cell. In order to find out the radiation field influence on non-equilibrium defects of acoustic origin samples were irradiated at room temperature by gamma rays of Co60. It has been discovered that in GaP light diodes treated by ultrasound unstable at room temperature dislocation networks occur at the volume of crystal. Ultrasound dose increase causes the creation of complex defects with high relaxation time and appearing of a part of more mobile defect,s which relax quicker. The nature of effects discovered has been discussed. The method of the emissive capacity restoring of samples degraded after irradiation have been proposed.

Ultra-short pulse generator

DOEpatents

McEwan, T.E.

1993-12-28

An inexpensive pulse generating circuit is disclosed that generates ultra-short, 200 picosecond, and high voltage 100 kW, pulses suitable for wideband radar and other wideband applications. The circuit implements a nonlinear transmission line with series inductors and variable capacitors coupled to ground made from reverse biased diodes to sharpen and increase the amplitude of a high-voltage power MOSFET driver input pulse until it causes non-destructive transit time breakdown in a final avalanche shock wave diode, which increases and sharpens the pulse even more. 5 figures.

Resonant-tunnelling diode oscillator using a slot-coupled quasioptical open resonator

NASA Technical Reports Server (NTRS)

Stephan, K. D.; Brown, E. R.; Parker, C. D.; Goodhue, W. D.; Chen, C. L.

1991-01-01

A resonant-tunneling diode has oscillated at X-band frequencies in a microwave circuit consisting of a slot antenna coupled to a semiconfocal open resonator. Coupling between the open resonator and the slot oscillator improves the noise-to-carrier ratio by about 36 dB relative to that of the slot oscillator alone in the 100-200 kHz range. A circuit operating near 10 GHz has been designed as a scale model for millimeter- and submillimeter-wave applications.

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

NASA Astrophysics Data System (ADS)

Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

2016-05-01

Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

Cryogenic thermal diode heat pipes

NASA Technical Reports Server (NTRS)

Alario, J.

1979-01-01

The development of spiral artery cryogenic thermal diode heat pipes was continued. Ethane was the working fluid and stainless steel the heat pipe material in all cases. The major tasks included: (1) building a liquid blockage (blocking orifice) thermal diode suitable for the HEPP space flight experiment; (2) building a liquid trap thermal diode engineering model; (3) retesting the original liquid blockage engineering model, and (4) investigating the startup dynamics of artery cryogenic thermal diodes. An experimental investigation was also conducted into the wetting characteristics of ethane/stainless steel systems using a specially constructed chamber that permitted in situ observations.

Short range laser obstacle detector. [for surface vehicles using laser diode array

NASA Technical Reports Server (NTRS)

Kuriger, W. L. (Inventor)

1973-01-01

A short range obstacle detector for surface vehicles is described which utilizes an array of laser diodes. The diodes operate one at a time, with one diode for each adjacent azimuth sector. A vibrating mirror a short distance above the surface provides continuous scanning in elevation for all azimuth sectors. A diode laser is synchronized with the vibrating mirror to enable one diode laser to be fired, by pulses from a clock pulse source, a number of times during each elevation scan cycle. The time for a given pulse of light to be reflected from an obstacle and received is detected as a measure of range to the obstacle.

Narrow-linewidth, quasi-continuous-wave ASE source based on a multiple-pass Nd:YAG zigzag slab amplifier configuration.

PubMed

Chen, Xiaoming; Lu, Yanhua; Hu, Hao; Tong, Lixin; Zhang, Lei; Yu, Yi; Wang, Juntao; Ren, Huaijin; Xu, Liu

2018-03-05

We present investigations into a narrow-linewidth, quasi-continuous-wave pulsed all-solid-state amplified spontaneous emission (ASE) source by use of a novel multiple-pass zigzag slab amplifier. The SE fluorescence emitted from a Nd:YAG slab active medium acts as the seed and is amplified back and forth 8 times through the same slab. Thanks to the angular multiplexing nature of the zigzag slab, high-intensity 1064-nm ASE output can be produced without unwanted self-lasing in this configuration. Experimentally, the output energy, optical conversion efficiency, pulse dynamics, spectral property, and beam quality of the ASE source are studied when the Nd:YAG slab end-pumped by two high-brightness laser diode arrays. The maximum single pulse energy of 347 mJ is generated with an optical efficiency of ~5.9% and a beam quality of 3.5/17 in the thickness/width direction of the slab. As expected, smooth pulses without relaxing spikes and continuous spectra are achieved. Moreover, the spectral width of the ASE source narrows versus the pump energy, getting a 3-dB linewidth of as narrow as 20 pm (i.e. 5.3 GHz). Via the sum frequency generation, high-intensity, smooth-pulse, and narrow-linewidth ASE sources are preferred for solving the major problem of saturation of the mesospheric sodium atoms and can create a much brighter sodium guide star to meet the needs of adaptive imaging applications in astronomy.

Continued advances in high brightness fiber-coupled laser modules for efficient pumping of fiber and solid-state lasers

NASA Astrophysics Data System (ADS)

Hemenway, M.; Chen, Z.; Urbanek, W.; Dawson, D.; Bao, L.; Kanskar, M.; DeVito, M.; Martinsen, R.

2018-02-01

Both the fibber laser and diode-pumped solid-state laser market continue to drive advances in pump diode module brightness. We report on the continued progress by nLIGHT to develop and deliver the highest brightness diode-laser pumps using single-emitter technology. Continued advances in multimode laser diode technology [13] and fiber-coupling techniques have enabled higher emitter counts in the element packages, enabling us to demonstrate 305 W into 105 μm - 0.16 NA. This brightness improvement is achieved by leveraging our prior-reported package re-optimization, allowing an increase in the emitter count from two rows of nine emitters to two rows of twelve emitters. Leveraging the two rows off twelve emitter architecture,, product development has commenced on a 400 W into 200 μm - 00.16 NA package. Additionally, the advances in pump technology intended for CW Yb-doped fiber laser pumping has been leveraged to develop the highest brightness 793 nm pump modules for 2 μm Thulium fiber laser pumping, generating 150 W into 200 μm - 0.18 NA and 100 W into 105 μm - 0.15 NA. Lastly, renewed interest in direct diode materials processing led us to experiment with wavelength multiplexing our existing state of the art 200 W, 105 μm - 00.15 NA package into a combined output of 395 WW into 105 μm - 0.16 NA.

Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.

PubMed

Yu, Hui; Pantouvaki, Marianna; Van Campenhout, Joris; Korn, Dietmar; Komorowska, Katarzyna; Dumon, Pieter; Li, Yanlu; Verheyen, Peter; Absil, Philippe; Alloatti, Luca; Hillerkuss, David; Leuthold, Juerg; Baets, Roel; Bogaerts, Wim

2012-06-04

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VπLπ of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VπLπ of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, up to 40 Gbit/s modulation is demonstrated for a 3 mm long device comprising a lateral diode and a co-designed traveling wave electrode.

A new strategy for efficient solar energy conversion: Parallel-processing with surface plasmons

NASA Technical Reports Server (NTRS)

Anderson, L. M.

1982-01-01

This paper introduces an advanced concept for direct conversion of sunlight to electricity, which aims at high efficiency by tailoring the conversion process to separate energy bands within the broad solar spectrum. The objective is to obtain a high level of spectrum-splitting without sequential losses or unique materials for each frequency band. In this concept, sunlight excites a spectrum of surface plasma waves which are processed in parallel on the same metal film. The surface plasmons transport energy to an array of metal-barrier-semiconductor diodes, where energy is extracted by inelastic tunneling. Diodes are tuned to different frequency bands by selecting the operating voltage and geometry, but all diodes share the same materials.

Planar varactor frequency multiplier devices with blocking barrier

NASA Technical Reports Server (NTRS)

Lieneweg, Udo (Inventor); Frerking, Margaret A. (Inventor); Maserjian, Joseph (Inventor)

1994-01-01

The invention relates to planar varactor frequency multiplier devices with a heterojunction blocking barrier for near millimeter wave radiation of moderate power from a fundamental input wave. The space charge limitation of the submillimeter frequency multiplier devices of the BIN(sup +) type is overcome by a diode structure comprising an n(sup +) doped layer of semiconductor material functioning as a low resistance back contact, a layer of semiconductor material with n-type doping functioning as a drift region grown on the back contact layer, a delta doping sheet forming a positive charge at the interface of the drift region layer with a barrier layer, and a surface metal contact. The layers thus formed on an n(sup +) doped layer may be divided into two isolated back-to-back BNN(sup +) diodes by separately depositing two surface metal contacts. By repeating the sequence of the drift region layer and the barrier layer with the delta doping sheet at the interfaces between the drift and barrier layers, a plurality of stacked diodes is formed. The novelty of the invention resides in providing n-type semiconductor material for the drift region in a GaAs/AlGaAs structure, and in stacking a plurality of such BNN(sup +) diodes stacked for greater output power with and connected back-to-back with the n(sup +) GaAs layer as an internal back contact and separate metal contact over an AlGaAs barrier layer on top of each stack.

Mechanical Resonance Displaying Changes in Phase to Large Audiences.

ERIC Educational Resources Information Center

Dorner, R.; And Others

1995-01-01

Describes a lecture demonstration apparatus for displaying free and forced oscillations of a mechanical system to a large class. Discusses the Blinking Diode Display and the Standing Wave description. Contains 20 references. (JRH)

Communications and logic systems at millimeter wave frequencies

NASA Technical Reports Server (NTRS)

1983-01-01

Activities in materials development, lithography, FET experiments, and mixer diode fabrication are reported. In addition, articles are presented which address leakage effects in n-GaAs MESFET's and lateral nonuniform doping in GaAs MESFET's.

Solvents effect on photoluminescence of nitrogen incorporated graphene oxide using light emitting diode as an excitation source

NASA Astrophysics Data System (ADS)

Kumara, K.; Shetty, T. C. S.; Patil, P. S.; Dharmaprakash, S. M.

2018-05-01

The present study investigates linear and third order nonlinear optical (TNLO) properties of nitrogen incorporated graphene oxide (NGO). A simple pyrolysis method is followed to obtain NGO powder which is soluble in polar aprotic and protic solvents. The normalized emission intensity of NGO for aprotic solvents shows better than polar protic solvents. The surface morphology and element analysis of NGO displayed a leaf like morphology and the elemental compositions of carbon, nitrogen and oxygen in NGO respectively. TNLO property of NGO is investigated by employing z-scan technique in which a continuous wave of wavelength 632.8 nm from He-Ne source was used. This investigation reveals the reverse saturation behaviour and negative nonlinear refractive (NLR) index in NGO. Negative NLR index sign arises mainly from local heating of solvents during continuous interactions of NGO with laser beam. The photoluminescence and TNLO data recorded for NGO revealed its potentiality for bio-sensing, bio-imaging and optoelectronic applications.

Compact CH{sub 4} sensor system based on a continuous-wave, low power consumption, room temperature interband cascade laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Lei, E-mail: donglei@sxu.edu.cn; State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006; Li, Chunguang

A tunable diode laser absorption spectroscopy-based methane sensor, employing a dense-pattern multi-pass gas cell and a 3.3 μm, CW, DFB, room temperature interband cascade laser (ICL), is reported. The optical integration based on an advanced folded optical path design and an efficient ICL control system with appropriate electrical power management resulted in a CH{sub 4} sensor with a small footprint (32 × 20 × 17 cm{sup 3}) and low-power consumption (6 W). Polynomial and least-squares fit algorithms are employed to remove the baseline of the spectral scan and retrieve CH{sub 4} concentrations, respectively. An Allan-Werle deviation analysis shows that the measurement precision can reach 1.4 ppb for amore » 60 s averaging time. Continuous measurements covering a seven-day period were performed to demonstrate the stability and robustness of the reported CH{sub 4} sensor system.« less

The Impact of a 940 nm Diode Laser with Radial Firing Tip and Bare End Fiber Tip on Enterococcus faecalis in the Root Canal Wall Dentin of Bovine Teeth: An In Vitro Study.

PubMed

Schulte-Lünzum, Ruth; Gutknecht, Norbert; Conrads, Georg; Franzen, Rene

2017-07-01

This in vitro study aimed to compare the bactericidal effect of two different laser delivery systems, a radial firing tip (RFT) and bare end fiber tip (BFT) used with the 940 nm diode laser on Enterococcus faecalis inoculated onto bovine radicular dentin. A total of 100 bovine dentin slices with a defined thickness of 500 and 1000 μm were prepared. They were assigned into four test groups together with untreated samples served as control for each slice thickness. The slices were inoculated on one side with 1 μL E. faecalis suspension and laser irradiation was performed indirectly on the opposite side with the 940 nm diode laser delivered with a 200 μm RFT and a BFT at 1 and 1.5 W in continuous wave mode for 8 sec per cycle and repeated four times. After irradiation, the remaining bacteria were detached and the produced suspension was diluted and plated onto blood agar plates with 5% sheep blood and incubated overnight at 37°C in a CO 2 -rich atmosphere. The colony-forming units of E. faecalis were counted and the bacterial reduction was analyzed. The diode laser equipped with RFT fiber design further reduced the number of vital E. faecalis cells significantly compared with BFT design, regardless of the used power and dentin thickness (p < 0.0001). The highest average value of 4 log kills was observed in 500 μm slice thickness irradiated with RFT at 1.5 W. Temperature measurements on the external root surface at 1 mm from the apex did not elicit a harmful temperature elevation in both power settings and fiber designs. Within the studied parameters, 940 nm diode laser in conjugation with RFT showed a satisfactory bactericidal effect without any thermal side effect to the tooth-supporting tissues.

Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deri, R J

2011-01-03

Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and productionmore » capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a {approx} 200 {micro}s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and increased reliability. The high-level requirements on the semiconductor lasers involve reliability, price points on a price-per-Watt basis, and a set of technical requirements. The technical requirements for the amplifier design in reference 1 are discussed in detail and are summarized in Table 1. These values are still subject to changes as the overall laser system continues to be optimized. Since pump costs can be a significant fraction of the overall laser system cost, it is important to achieve sufficiently low price points for these components. At this time, the price target for tenth-of-akind IFE plant is $0.007/Watt for packaged devices. At this target level, the pumps account for approximately one third of the laser cost. The pump lasers should last for the life of the power plant, leading to a target component lifetime requirement of roughly 14 Ghosts, corresponding to a 30 year plant life and 15 Hz repetition rate. An attractive path forward involes pump operation at high output power levels, on a Watts-per-bar (Watts/chip) basis. This reduces the cost of pump power (price-per-Watt), since to first order the unit price does not increase with power/bar. The industry has seen a continual improvement in power output, with current 1 cm-wide bars emitting up to 500 W QCW (quasi-continuous wave). Increased power/bar also facilitates achieving high irradiance in the array plane. On the other hand, increased power implies greater heat loads and (possibly) higher current drive, which will require increased attention to thermal management and parasitic series resistance. Diode chips containing multiple p-n junctions and quantum wells (also called nanostack structures) may provide an additional approach to reduce the peak current.« less

A Hybrid Fiber/Solid-State Regenerative Amplifier with Tunable Pulse Widths for Satellite Laser Ranging

NASA Technical Reports Server (NTRS)

Coyle, Barry; Poulios, Demetrios

2013-01-01

A fiber/solid-state hybrid seeded regenerative amplifier, capable of achieving high output energy with tunable pulse widths, has been developed for satellite laser ranging applications. The regenerative amplifier cavity uses a pair of Nd:YAG zigzag slabs oriented orthogonally to one another in order to make thermal lensing effects symmetrical and simplify optical correction schemes. The seed laser used is a fiber-coupled 1,064-nm narrowband (<0.02 nm) diode laser that is discretely driven in a new short-pulsed mode, enabling continuously tunable seed pulse widths in the 0.2-to-0.4-ns range. The amplifier gain unit consists of a pair of Brewster-cut 6-bounce zigzag Nd:YAG laser slabs, oriented 90deg relative to each other in the amplifier head. This arrangement creates a net-symmetrical thermal lens effect (an opposing singleaxis effect in each slab), and makes thermo-optical corrections simple by optimizing the curvature of the nearest cavity mirror. Each slab is pumped by a single 120-W, pulsed 808-nm laser diode array. In this configuration, the average pump beam distribution in the slabs had a 1-D Gaussian shape, which matches the estimated cavity mode size. A half-wave plate between the slabs reduces losses from Fresnel reflections due to the orthogonal slabs Brewster-cut end faces. Successful "temporal" seeding of the regenerative amplifier cavity results in a cavity Q-switch pulse envelope segmenting into shorter pulses, each having the width of the input seed, and having a uniform temporal separation corresponding to the cavity round-trip time of approx. =10 ns. The pulse energy is allowed to build on successive passes in the regenerative amplifier cavity until a maximum is reached, (when cavity gains and losses are equal), after which the pulse is electro- optically switched out on the next round trip The overall gain of the amplifier is approx. =82 dB (or a factor of 1.26 million). After directing the amplified output through a LBO frequency doubling crystal, approx. = 2.1 W of 532-nm output (>1 mJ) was measured. This corresponds to a nonlinear conversion efficiency of >60%. Furthermore, by pulse pumping this system, a single pulse per laser shot can be created for the SLR (satellite laser ranging) measurement, and this can be ejected into the instrument. This is operated at the precise frequency needed by the measurement, as opposed to commercial short-pulsed, mode-locked systems that need to operate in a continuous fashion, or CW (continuous wave), and create pulses at many MHz. Therefore, this design does not need to throw away or dump 99% of the laser energy to produce what is required; this system can be far smaller, more efficient, cheaper, and readily deployed in the field when packaged efficiently. Finally, by producing custom diode seed pulses electronically, two major advantages over commercial systems are realized: First, this pulse shape is customizable and not affected by the cavity length or gain of the amplifier cavity, and second, it can produce adjustable (selectable) pulse widths by simply adding multiple seed diodes and coupling each into commercial, low-cost fiber-optic combiners.

Low intensity 635 nm diode laser irradiation inhibits fibroblast-myofibroblast transition reducing TRPC1 channel expression/activity: New perspectives for tissue fibrosis treatment.

PubMed

Sassoli, Chiara; Chellini, Flaminia; Squecco, Roberta; Tani, Alessia; Idrizaj, Eglantina; Nosi, Daniele; Giannelli, Marco; Zecchi-Orlandini, Sandra

2016-03-01

Low-level laser therapy (LLLT) or photobiomodulation therapy is emerging as a promising new therapeutic option for fibrosis in different damaged and/or diseased organs. However, the anti-fibrotic potential of this treatment needs to be elucidated and the cellular and molecular targets of the laser clarified. Here, we investigated the effects of a low intensity 635 ± 5 nm diode laser irradiation on fibroblast-myofibroblast transition, a key event in the onset of fibrosis, and elucidated some of the underlying molecular mechanisms. NIH/3T3 fibroblasts were cultured in a low serum medium in the presence of transforming growth factor (TGF)-β1 and irradiated with a 635 ± 5 nm diode laser (continuous wave, 89 mW, 0.3 J/cm(2) ). Fibroblast-myofibroblast differentiation was assayed by morphological, biochemical, and electrophysiological approaches. Expression of matrix metalloproteinase (MMP)-2 and MMP-9 and of Tissue inhibitor of MMPs, namely TIMP-1 and TIMP-2, after laser exposure was also evaluated by confocal immunofluorescence analyses. Moreover, the effect of the diode laser on transient receptor potential canonical channel (TRPC) 1/stretch-activated channel (SAC) expression and activity and on TGF-β1/Smad3 signaling was investigated. Diode laser treatment inhibited TGF-β1-induced fibroblast-myofibroblast transition as judged by reduction of stress fibers formation, α-smooth muscle actin (sma) and type-1 collagen expression and by changes in electrophysiological properties such as resting membrane potential, cell capacitance and inwardly rectifying K(+) currents. In addition, the irradiation up-regulated the expression of MMP-2 and MMP-9 and downregulated that of TIMP-1 and TIMP-2 in TGF-β1-treated cells. This laser effect was shown to involve TRPC1/SAC channel functionality. Finally, diode laser stimulation and TRPC1 functionality negatively affected fibroblast-myofibroblast transition by interfering with TGF-β1 signaling, namely reducing the expression of Smad3, the TGF-β1 downstream signaling molecule. Low intensity irradiation with 635 ± 5 nm diode laser inhibited TGF-β1/Smad3-mediated fibroblast-myofibroblast transition and this effect involved the modulation of TRPC1 ion channels. These data contribute to support the potential anti-fibrotic effect of LLLT and may offer further informations for considering this therapy as a promising therapeutic tool for the treatment of tissue fibrosis. © 2015 Wiley Periodicals, Inc.

Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy

NASA Astrophysics Data System (ADS)

Ankudinov, A.; Titkov, A. N.; Evtikhiev, Vadim P.; Kotelnikov, Eugeny Y.; Bazhenov, N.; Zegrya, Georgy G.; Huhtinen, H.; Laiho, R.

2003-06-01

One of the important factors that restricts the power limit of semiconductor lasers is a catastrophic optical mirror damage. This process is significantly suppressed through decreasing the optical power density due to its redistribution over the broad transverse waveguide (BW). Recently it was shown that record-breaking values of the quasicontinuous and continuous-wave (QWC and CW) output power for 100-μm-wide-aperture devices can be achieved by incorporating a broad transverse waveguide into 0.97 μm emitting Al-free InGaAs(P)/InGaP/GaAs and Al-containing InGaAs/AlGaAs/GaAs separate confinement heterostructure quantum-well lasers (SCH-QWL). Another important factor limiting the CW output power is the Joule overheating of a laser diode due to an extra serial resistance. Traditionally, a decrease in the resistance is achieved by development of the contacts, whereas a voltage distribution across the device structure is not analyzed properly. At high operating currents the applied voltage can drop not only across the n-p-junction, but also at certain additional regions of the laser structure depending on a particular design of the device. Electrostatic force microscopy (EFM) provides a very promising method to study the voltage distribution across an operating device with a nanometer space resolution. An application of EFM for diagnostics of III-V laser diodes without and under applied biases have been recently demonstrated. However, the most interesting range of the biases, the lazing regime, has not been studied yet.

Growth and characterization of organic material 4-dimethylaminobenzaldehyde single crystal.

PubMed

Jebin, R P; Suthan, T; Rajesh, N P; Vinitha, G; Madhusoodhanan, U

2015-01-25

The organic material 4-dimethylaminobenzaldehyde single crystals were grown by slow evaporation technique. The grown crystal was confirmed by the single crystal and powder X-ray diffraction analyses. The functional groups of the crystal have been identified from the Fourier Transform Infrared (FTIR) and FT-Raman studies. The optical property of the grown crystal was analyzed by UV-Vis-NIR and photoluminescence (PL) spectral measurements. The thermal behavior of the grown crystal was analyzed by thermogravimetric (TG) and differential thermal analyses (DTA). Dielectric measurements were carried out with different frequencies by using parallel plate capacitor method. The third order nonlinear optical properties of 4-dimethylaminobenzaldehyde was measured by the Z-scan technique using 532 nm diode pumped continuous wave (CW) Nd:YAG laser. Copyright © 2014 Elsevier B.V. All rights reserved.

Semiconductor-based narrow-line and high-brilliance 193-nm laser system for industrial applications

NASA Astrophysics Data System (ADS)

Opalevs, D.; Scholz, M.; Stuhler, J.; Gilfert, C.; Liu, L. J.; Wang, X. Y.; Vetter, A.; Kirner, R.; Scharf, T.; Noell, W.; Rockstuhl, C.; Li, R. K.; Chen, C. T.; Voelkel, R.; Leisching, P.

2018-02-01

We present a novel industrial-grade prototype version of a continuous-wave 193 nm laser system entirely based on solid state pump laser technology. Deep-ultraviolet emission is realized by frequency-quadrupling an amplified diode laser and up to 20 mW of optical power were generated using the nonlinear crystal KBBF. We demonstrate the lifetime of the laser system for different output power levels and environmental conditions. The high stability of our setup was proven in > 500 h measurements on a single spot, a crystal shifter multiplies the lifetime to match industrial requirements. This laser improves the relative intensity noise, brilliance, wall-plug efficiency and maintenance cost significantly. We discuss first lithographic experiments making use of this improvement in photon efficiency.

Quantum cascade lasers, systems, and applications in Europe

NASA Astrophysics Data System (ADS)

Lambrecht, Armin

2005-03-01

Since the invention of the Quantum Cascade Laser (QCL) a decade ago an impressive progress has been achieved from first low temperature pulsed laser emission to continuous wave operation at room temperature. Distributed feedback (DFB) lasers working in pulsed mode at ambient temperatures and covering a broad spectral range in the mid infrared (MIR) are commercially available now. For many industrial applications e.g. automotive exhaust control and process monitoring, laser spectroscopy is an established technique, generally using near infrared (NIR) diode lasers. However, the mid infrared (MIR) spectral region is of special interest because of much stronger absorption lines compared to NIR. The status of QCL devices, system development and applications is reviewed. Special emphasis is given to the situation in Europe where a remarkable growth of QCL related R&D can be observed.

Overview of optical rectennas for solar energy harvesting

NASA Astrophysics Data System (ADS)

Zhu, Zixu; Joshi, Saumil; Pelz, Bradley; Moddel, Garret

2013-09-01

Although the concept of using optical rectenna for harvesting solar energy was first introduced four decades ago, only recently has it invited a surge of interest, with dozens of laboratories around the world working on various aspects of the technology. An optical rectenna couples an ultra-high-speed diode to a submicron antenna so that the incoming radiation received by the antenna is rectified by the diode to produce a DC power output. The result is a technology that can be efficient and inexpensive, requiring only low-cost materials. Conventional classical rectification theory does not apply at optical frequencies, necessitating the application of quantum photon-assisted tunneling theory to describe the device operation. At first glance it would appear that the ultimate conversion efficiency is limited only by the Landsberg limit of 93%, but a more sober analysis that includes limitation due to the coherence of solar radiation leads to a result that coincides with the Trivich-Flinn limit of 44%. Innovative antenna designs are required to achieve high efficiency at frequencies where resistive losses in metal are substantial. The diode most often considered for rectennas make use of electron tunneling through ultra-thin insulators in metal-insulator-metal (MIM) diodes. The most severe constraint is that the impedances of the antenna and diodes must match for efficient power transfer. The consequence is an RC time constant that cannot be achieved with parallel-plate MIM diodes, leading to the need for real innovations in diode structures. Technologies under consideration include sharp-tip and traveling-wave MIM diodes, and graphene geometric diodes. We survey the technologies under consideration.

Progress on single barrier varactors for submillimeter wave power generation

NASA Technical Reports Server (NTRS)

Nilsen, Svein M.; Groenqvist, Hans; Hjelmgren, Hans; Rydberg, Anders; Kollberg, Erik L.

1992-01-01

Theoretical work on Single Barrier Varactor (SBV) diodes, indicate that the efficiency for a multiplier has a maximum for a considerably smaller capacitance variation than previously thought. The theoretical calculations are performed, both with a simple theoretical model and a complete computer simulation using the method of harmonic balance. Modeling of the SBV is carried out in two steps. First, the semiconductor transport equations are solved simultaneously using a finite difference scheme in one dimension. Secondly, the calculated I-V, and C-V characteristics are input to a multiplier simulator which calculates the optimum impedances, and output powers at the frequencies of interest. Multiple barrier varactors can also be modeled in this way. Several examples on how to design the semiconductor layers to obtain certain characteristics are given. The calculated conversion efficiencies of the modeled structures, in a multiplier circuit, are also presented. Computer simulations for a case study of a 750 GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes. InAs and InGaAs SBV diodes have been fabricated and their current vs. voltage characteristics are presented. In the InAs diode, was the large bandgap semiconductor AlSb used as barrier. The InGaAs diode was grown lattice matched to an InP substrate with InAlAs as a barrier material. The current density is greatly reduced for these two material combinations, compared to that of GaAs/AlGaAs SBV diodes. GaAs based diodes can be biased to higher voltages than InAs diodes.

Current transport mechanisms in mercury cadmium telluride diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn; Li, Qing; He, Jiale

This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation,more » flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.« less

Advanced wave field sensing using computational shear interferometry

NASA Astrophysics Data System (ADS)

Falldorf, Claas; Agour, Mostafa; Bergmann, Ralf B.

2014-07-01

In this publication we give a brief introduction into the field of Computational Shear Interferometry (CoSI), which allows for determining arbitrary wave fields from a set of shear interferograms. We discuss limitations of the method with respect to the coherence of the underlying wave field and present various numerical methods to recover it from its sheared representations. Finally, we show experimental results on Digital Holography of objects with rough surface using a fiber coupled light emitting diode and quantitative phase contrast imaging as well as numerical refocusing in Differential Interference Contrast (DIC) microscopy.

Conversion loss and noise of microwave and millimeter-wave mixers. I - Theory. II - Experiment

NASA Technical Reports Server (NTRS)

Held, D. N.; Kerr, A. R.

1978-01-01

The conversion loss and noise of microwave and millimeter-wave mixers are analyzed. Nonlinear capacitance, arbitrary embedding impedances, as well as shot, thermal and scattering noise arising in the diode, figure in the analysis. The anomalous mixer noise noted in millimeter-wave mixers by Kerr (1975) is shown to be explainable in terms of the correlation of down-converted components of the time-varying shot noise. A digital computer analysis of the conversion loss, noise, and output impedance of an 80-120-GHz mixer is also conducted.

Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture

NASA Astrophysics Data System (ADS)

Karelits, Matityahu; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-10-01

A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.

Optimizing Energy Transduction of Fluctuating Signals with Nanofluidic Diodes and Load Capacitors.

PubMed

Ramirez, Patricio; Cervera, Javier; Gomez, Vicente; Ali, Mubarak; Nasir, Saima; Ensinger, Wolfgang; Mafe, Salvador

2018-05-01

The design and experimental implementation of hybrid circuits is considered allowing charge transfer and energy conversion between nanofluidic diodes in aqueous ionic solutions and conventional electronic elements such as capacitors. The fundamental concepts involved are reviewed for the case of fluctuating zero-average external potentials acting on single pore and multipore membranes. This problem is relevant to electrochemical energy conversion and storage, the stimulus-response characteristics of nanosensors and actuators, and the estimation of the accumulative effects caused by external signals on biological ion channels. Half-wave and full-wave voltage doublers and quadruplers can scale up the transduction between ionic and electronic signals. The network designs discussed here should be useful to convert the weak signals characteristic of the micro and nanoscale into robust electronic responses by interconnecting iontronics and electronic elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Full down-conversion of amber-emitting phosphor-converted light-emitting diodes with powder phosphors and a long-wave pass filter.

PubMed

Oh, Jeong Rok; Cho, Sang-Hwan; Park, Hoo Keun; Oh, Ji Hye; Lee, Yong-Hee; Do, Young Rag

2010-05-24

This paper reports the possibility of a facile optical structure to realize a highly efficient monochromatic amber-emitting light-emitting diode (LED) using a powder-based phosphor-converted LED combined with a long-wave pass filter (LWPF). The capping of a blue-reflecting and amber-passing LWPF enhances both the amber emission from the silicate amber phosphor layer and the color purity due to the blocking and recycling of the pumping blue light from the InGaN LED. The enhancement of the luminous efficacy of the amber pc-LED with a LWPF (phosphor concentration 20 wt%, 39.4 lm/W) is 34% over that of an amber pc-LED without a LWPF (phosphor concentration 55 wt%, 29.4 lm/W) at 100 mA and a high color purity (>96%) with Commission International d'Eclairage (CIE) color coordinates of x=0.57 and y=0.42.

Ultra-high optical responsivity of semiconducting asymmetric nano-channel diodes for photon detection

NASA Astrophysics Data System (ADS)

Akbas, Y.; Plecenik, T.; Durina, P.; Plecenik, A.; Jukna, A.; Wicks, G.; Sobolewski, Roman

2017-05-01

The asymmetric nano-channel diode (ANCD) is the 2-dimensional electron gas (2DEG) semiconductor nanodevice that, unlike a conventional diode, relies on the device nanostructure and field-controlled transport in a ballistic nanometerwidth channel instead of barriers to develop its asymmetric, diode-like current-voltage (I-V) characteristics. We focus on ANCD optoelectronic properties, and demonstrate that the devices can act as very sensitive, single-photon-level, visiblelight photodetectors. Our test structures consist of 2-μm-long and 230-nm-wide channels and were fabricated using electron-beam lithography on a GaAs/AlGaAs heterostructure with a 2DEG layer, followed by reactive ion etching. The I-V curves were collected by measuring the transport current under the voltage-source biasing condition, both in the dark and under light illumination. The experiments were conducted inside a cryostat, in a temperature range from 300 K to 78 K. As an optical excitation, we used a 800-nm-wavelength, generated by a commercial Ti:sapphire laser operated either at a quasi-continuous-wave mode or as a source of 100-fs-wide pulses. The impact of the light illumination was very clear, and at low temperatures we observed a significant photocurrent Iph 0.25 μA at temperature 78 K for the incident optical power as low as 1 nW, with a limited dark-current background. The magnitude of the device optical responsivity increased linearly with the decrease of the optical power, reaching for 1-nW optical excitation the value as high as 400 A/W at room temperature and >800 A/W at 78K. The physics of the photoresponse gain mechanism in the ANCD arises from a vast disparity between the sub-picosecond transit time of photo-excited electrons travelling in the 2DEG nanochannel and the up to microsecond lifetime of photo-excited holes pushed towards the device substrate.

Mesenchymal stromal cell and osteoblast responses to oxidized titanium surfaces pre-treated with λ = 808 nm GaAlAs diode laser or chlorhexidine: in vitro study.

PubMed

Chellini, Flaminia; Giannelli, Marco; Tani, Alessia; Ballerini, Lara; Vallone, Larissa; Nosi, Daniele; Zecchi-Orlandini, Sandra; Sassoli, Chiara

2017-08-01

Preservation of implant biocompatibility following peri-implantitis treatments is a crucial issue in odontostomatological practice, being closely linked to implant re-osseointegration. Our aim was to assess the responses of osteoblast-like Saos2 cells and adult human bone marrow-mesenchymal stromal cells (MSCs) to oxidized titanium surfaces (TiUnite ® , TiU) pre-treated with a 808 ± 10 nm GaAlAs diode laser operating in non-contact mode, in continuous (2 W, 400 J/cm 2 ; CW) or pulsed (20 kHz, 7 μs, 0.44 W, 88 J/cm 2 ; PW) wave, previously demonstrated to have a strong bactericidal effect and proposed as optional treatment for peri-implantitis. The biocompatibility of TiU surfaces pre-treated with chlorhexidine digluconate (CHX) was also evaluated. In particular, in order to mimic the in vivo approach, TiU surfaces were pre-treated with CHX (0.2%, 5 min); CHX and rinse; and CHX, rinse and air drying. In some experiments, the cells were cultured on untreated TiU before being exposed to CHX. Cell viability (MTS assay), proliferation (EdU incorporation assay; Ki67 confocal immunofluorescence analysis), adhesion (morphological analysis of actin cytoskeleton organization), and osteogenic differentiation (osteopontin confocal immunofluorescence analysis; mineralized bone-like nodule formation) analyses were performed. CHX resulted cytotoxic in all experimental conditions. Diode laser irradiation preserved TiU surface biocompatibility. Notably, laser treatment appeared even to improve the known osteoconductive properties of TiU surfaces. Within the limitations of an in vitro experimentation, this study contributes to provide additional experimental basis to support the potential use of 808 ± 10 nm GaAlAs diode laser at the indicated irradiation setting, in the treatment of peri-implantitis and to discourage the use of CHX.

Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

PubMed

Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

2012-03-12

The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

Monolithic control components for high power mm-waves

NASA Astrophysics Data System (ADS)

Armstrong, A.; Goodrich, J.; Moroney, W.; Wheeler, D.

1985-09-01

Monolithic PIN diode arrays are shown to provide significant advances in switching ratios, bandwidth, and high-power capability for millimeter control applications The PIN diodes are arranged in a series/parallel configuration and form an electronically controlled window for switching RF power by applying DC voltage. At Ka band, an SPST switch using the window array (WINAR) design typically has 0.6 dB insertion loss and 22 dB isolation over the 26.5 to 40.0 GHz band. The switch has over 500 W peak power and 25 W average power capability.

Resonant tunnelling diode based high speed optoelectronic transmitters

NASA Astrophysics Data System (ADS)

Wang, Jue; Rodrigues, G. C.; Al-Khalidi, Abdullah; Figueiredo, José M. L.; Wasige, Edward

2017-08-01

Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.

Sub-terahertz and terahertz microstrip resonant-tunneling-diode oscillators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feiginov, Michael, E-mail: feiginov.michael@canon.co.jp

We present a theoretical analysis of traveling-wave microstrip resonant-tunneling-diode (RTD) oscillators. Such oscillators are similar to terahertz (THz) quantum-cascade lasers (QCLs) with a metal-metal waveguide and with just the active part of a single QCL period (an RTD) as their active core. Assuming realistic parameters of RTDs, we show that the microstrip RTD oscillators should be working at sub-THz and THz frequencies. Contrary to the contemporary THz QCLs, RTD microstrips are room-temperature oscillators. The major loss- and gain-enhancement mechanisms in RTD microstrips are identified.

Nonlinear symmetry breaking in photometamaterials

NASA Astrophysics Data System (ADS)

Gorlach, Maxim A.; Dobrykh, Dmitry A.; Slobozhanyuk, Alexey P.; Belov, Pavel A.; Lapine, Mikhail

2018-03-01

We design and analyze theoretically photometamaterials with each meta-atom containing both photodiode and light-emitting diode. Illumination of the photodiode by the light-emitting diode gives rise to an additional optical feedback within each unit cell, which strongly affects resonant properties and nonlinear response of the meta-atom. In particular, we demonstrate that inversion symmetry breaking occurs upon a certain threshold magnitude of the incident wave intensity resulting in an abrupt emergence of second-harmonic generation, which was not originally available, as well as in the reduced third-harmonic signal.

Characterization of quantum well laser diodes for application within the AMRDEC HWIL facilities

NASA Astrophysics Data System (ADS)

Saylor, Daniel A.; Bender, Matt; Cantey, Thomas M.; Beasley, D. B.; Buford, Jim A.

2004-08-01

The U.S. Army's Research, Development, and Engineering Command's (RDECOM) Aviation and Missile Research, Development, and Engineering Center (AMRDEC) provides Hardware-in-the-Loop (HWIL) test support to numerous tactical and theatre missile programs. Critical to the successful execution of these tests is the state-of-the-art technologies employed in the visible and infrared scene projector systems. This paper describes the results of characterizations tests performed on new mid-wave infrared (MWIR) quantum well laser diodes recently provided to AMRDEC by the Naval Research Labs and Sarnoff Industries. These lasers provide a +10X imrovement in MWIR output over the previous technology of lead-salt laser diodes. Performance data on output power, linearity, and solid-angle coverage are presented. A discussion of the laser packages is also provided.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elizondo-Decanini, Juan M.; Coleman, Phillip D.; Moorman, Matthew W.

Low- and high-voltage Soliton waves were produced and used to demonstrate collision and compression using diode-based nonlinear transmission lines. Experiments demonstrate soliton addition and compression using homogeneous nonlinear lines. We built the nonlinear lines using commercially available diodes. These diodes are chosen after their capacitance versus voltage dependence is used in a model and the line design characteristics are calculated and simulated. Nonlinear ceramic capacitors are then used to demonstrate high-voltage pulse amplification and compression. The line is designed such that a simple capacitor discharge, input signal, develops soliton trains in as few as 12 stages. We also demonstrated outputmore » voltages in excess of 40 kV using Y5V-based commercial capacitors. The results show some key features that determine efficient production of trains of solitons in the kilovolt range.« less

Low power continuous-wave nonlinear optical effects in MoS2 nanosheets synthesized by simple bath ultrasonication

NASA Astrophysics Data System (ADS)

Karmakar, S.; Biswas, S.; Kumbhakar, P.

2017-11-01

Here, we have unveiled low power continuous-wave nonlinear optical properties of a few layer (4-12L) Molybdenum disulfide (MoS2) dispersion in N, N-dimethylformamide (DMF) by using spatial self-phase modulation technique. The effective third-order nonlinear susceptibility of the monolayer has been estimated to be as high as ∼10-8 esu. Also a low power technique of syntheses of stable and a few-layer (4-12L) MoS2 dispersion in DMF has been demonstrated here by utilizing ultrasonication bath treatment combined with the natural gravitation sedimentation effect starting from the bulk MoS2 powder. The synthesized samples are exhibiting interesting linear optical absorption and photoluminescence (PL) after exfoliation to a few layer nanosheets (NSs) and the exciton binding energies have been determined from PL emission data in association with 2D hydrogenic Bohr-exciton model. The specific capacitances (Csp) of the electrode prepared with MoS2 NSs have been measured by electrochemical measurement and the highest value of Csp is 382 Fg-1 for 4L sample. The reported intensity driven change of Csp in the presence of light emitted from light emitting diodes of various colours is unprecedented. The demonstrated technique can be scaled up for large scale and easy synthesis of other 2D materials having applications in optoelectronics and energy devices.

Multi-wavelength Yb:YAG/Nd³⁺:YVO₄ continuous-wave microchip Raman laser.

PubMed

Wang, Xiao-Lei; Dong, Jun; Wang, Xiao-Jie; Xu, Jie; Ueda, Ken-Ichi; Kaminskii, Alexander A

2016-08-01

Multi-wavelength continuous-wave (CW) Raman lasers in a laser diode pumped Yb:YAG/Nd³⁺:YVO₄ microchip Raman laser have been demonstrated for the first time to our best knowledge. The multi-wavelength laser of the first Stokes radiation around 1.08 μm has been achieved with a Raman shift of 261  cm^-1 for a-cut Nd:YVO₄ crystal corresponding to the fundamental wavelength at 1.05 μm. Multi-wavelength laser operation simultaneously around 1.05 and 1.08 μm has been achieved under the incident pump power between 1.5 and 1.7 W. Multi-wavelength Raman laser with frequency separation of 1 THz around 1.08 μm has been obtained when the incident pump power is higher than 1.7 W. The maximum Raman laser output power of 260 mW at 1.08 μm is obtained and the corresponding optical-to-optical conversion efficiency is 4.2%. Elliptically polarized fundamental laser and linearly polarized Raman laser were observed in an Yb:YAG/Nd:YVO₄ CW microchip Raman laser. The experimental results of linearly polarized, multi-wavelength Yb:YAG/Nd:YVO₄ CW microchip Raman laser with adjustable frequency separation provide a novel approach for developing potential compact laser sources for Terahertz generation.

Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.

PubMed

Kim, Hyun-Seok; Heo, Jun-Woo; Chol, Seok-Gyu; Ko, Dong-Sik; Rhee, Jin-Koo

2015-07-01

InP is considered as the most promising material for millimeter-wave laser-diode applications owing to its superior noise performance and wide operating frequency range of 75-110 GHz. In this study, we demonstrate the fabrication of InP Gunn diodes with a current-limiting structure using rapid thermal annealing to modulate the potential height formed between an n-type InP active layer and a cathode contact. We also explore the reverse current characteristics of the InP Gunn diodes. Experimental results indicate a maximum anode current and an oscillation frequency of 200 mA and 93.53 GHz, respectively. The current-voltage characteristics are modeled by considering the Schottky and ohmic contacts, work function variations, negative differential resistance (NDR), and tunneling effect. Although no direct indication of the NDR is observed, the simulation results match the measured data well. The modeling results show that the NDR effect is always present but is masked because of electron emission across the shallow Schottky barrier.

Research and Development of Laser Diode Based Instruments for Applications in Space

NASA Technical Reports Server (NTRS)

Krainak, Michael; Abshire, James; Cornwell, Donald; Dragic, Peter; Duerksen, Gary; Switzer, Gregg

1999-01-01

Laser diode technology continues to advance at a very rapid rate due to commercial applications such as telecommunications and data storage. The advantages of laser diodes include, wide diversity of wavelengths, high efficiency, small size and weight and high reliability. Semiconductor and fiber optical-amplifiers permit efficient, high power master oscillator power amplifier (MOPA) transmitter systems. Laser diode systems which incorporate monolithic or discrete (fiber optic) gratings permit single frequency operation. We describe experimental and theoretical results of laser diode based instruments currently under development at NASA Goddard Space Flight Center including miniature lidars for measuring clouds and aerosols, water vapor and wind for Earth and planetary (Mars Lander) use.

Tunable femtosecond lasers with low pump thresholds

NASA Astrophysics Data System (ADS)

Oppo, Karen

The work in this thesis is concerned with the development of tunable, femtosecond laser systems, exhibiting low pump threshold powers. The main motive for this work was the development of a low threshold, self-modelocked Ti:Al2O3 laser in order to replace the conventional large-frame argon-ion pump laser with a more compact and efficient all-solid-state alternative. Results are also presented for an all-solid-state, self-modelocked Cr:LiSAF laser, however most of this work is concerned with self-modelocked Ti:Al2O3 laser systems. In chapter 2, the operation of a regeneratively-initiated, and a hard-aperture self- modelocked Ti:Al2O3 laser, pumped by an argon-ion laser, is discussed. Continuous- wave oscillation thresholds as low as 160mW have been demonstrated, along with self-modelocked threshold powers as low as 500mW. The measurement and suppression of phase noise on modelocked lasers is discussed in chapter 3. This is followed by a comparison of the phase noise characteristics of the regeneratively-initiated, and hard-aperture self-modelocked Ti:Al2O3 lasers. The use of a synchronously-operating, high resolution electron-optical streak camera in the evaluation of timing jitter is also presented. In chapter 4, the construction and self-modelocked operation of an all-solid-state Ti:Al2O3 laser is described. The all-solid-state alternative to the conventional argon-ion pump laser was a continuous-wave, intracavity-frequency doubled, diode-laser pumped Nd:YLF ring laser. At a total diode-laser pump power of 10W, this minilaser was capable of producing a single frequency output of 1W, at 523.5nm in a TEM00 beam. The remainder of this thesis looks at the operation of a self-modelocked Ti:Al2O3 laser generating ultrashort pulses at wavelengths as long as 1053nm. The motive for this work was the development of an all-solid-state, self- modelocked Ti:Al2O3 laser operating at 1053nm, for use as a master oscillator in a Nd:glass power chain.

Research in millimeter wave techniques

NASA Technical Reports Server (NTRS)

Forsythe, R. E.; King, J. L.

1979-01-01

The following technical developments are described: (1) a reliable 183 GHz subharmonic mixer, (2) a precision noise figure test setup, (3) the successful deposition of SiO2 on a noncontacting backshort, and (4) sturdier whisker points used for diode contacting.

Monitoring the effect of mild ischemia with a built-in light-emitting diode contact lens electrode and a low-cost custom-made apparatus.

PubMed

Fleischman, A; Parvari, U; Oron, Y; Geyer, O

2012-06-01

Electroretinography (ERG) is widely used in clinical work and research to assess the retinal function. We evaluated an easy to build ERG setup adapted for small animals comprising two contact lens electrodes with a built-in light-emitting diode and a custom-made amplification system. The system's sensitivity was tested by monitoring ERG in albino rat eyes subjected to mild ischemia. Flash ERG was recorded by two contact lens electrodes positioned on the rat's corneas and used alternately as test or reference. The a- and b-wave amplitudes, a-wave latency, b-wave implicit time and oscillatory potentials (OPs) were analyzed. Ischemia was achieved by elevating the intraocular pressure in the eye's anterior chamber. ERG was recorded on post-ischemia (PI) days -1, 1, 3 and 7. Morphological changes were analyzed on hematoxylin/eosin stained 5 µm sections of control 7d PI retinas. In control eyes, ERG exhibited a pattern similar to a standard recording. Retinas subjected to mild ischemia preserved ordered layered morphology, exhibiting approximately 30% loss of ganglion cells and no changes in gross morphology. By day 3 PI, ischemia caused an increase in the a-wave amplitude (from 34.9 ± 2.7 to 45.4 ± 4.3 µV), a decrease in the b-wave amplitude (from 248 ± 13 to 162 ± 8 µV), an increase in a-wave latency (from 11.1 ± 0.3 to 17.3 ± 1.4 ms) and b-wave implicit time (from 81.0 ± 1.6 to 90.0 ± 2.5 ms), and attenuation of OPs. The described setup proved sensitive and reliable for evaluating subtle changes in the retinal function in small animals.

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

NASA Astrophysics Data System (ADS)

Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

2014-12-01

We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

Electrical stimulation vs. pulsed and continuous-wave optical stimulation of the rat prostate cavernous nerves, in vivo

NASA Astrophysics Data System (ADS)

Perkins, William C.; Lagoda, Gwen A.; Burnett, Arthur; Fried, Nathaniel M.

2015-07-01

Identification and preservation of the cavernous nerves (CNs) during prostate cancer surgery is critical for post-operative sexual function. Electrical nerve stimulation (ENS) mapping has previously been tested as an intraoperative tool for CN identification, but was found to be unreliable. ENS is limited by the need for electrode-tissue contact, poor spatial precision from electrical current spreading, and stimulation artifacts interfering with detection. Alternatively, optical nerve stimulation (ONS) provides noncontact stimulation, improved spatial selectivity, and elimination of stimulation artifacts. This study compares ENS to pulsed/CW ONS to explore the ONS mechanism. A total of eighty stimulations were performed in 5 rats, in vivo. ENS (4 V, 5 ms, 10 Hz) was compared to ONS using a pulsed diode laser nerve stimulator (1873 nm, 5 ms, 10 Hz) or CW diode laser nerve stimulator (1455 nm). Intracavernous pressure (ICP) response and nerve compound action potentials (nCAPs) were measured. All three stimulation modes (ENS, ONS-CW, ONS-P) produced comparable ICP magnitudes. However, ENS demonstrated more rapid ICP response times and well defined nCAPs compared to unmeasurable nCAPs for ONS. Further experiments measuring single action potentials during ENS and ONS are warranted to further understand differences in the ENS and ONS mechanisms.

Coherent cavity-enhanced dual-comb spectroscopy.

PubMed

Fleisher, Adam J; Long, David A; Reed, Zachary D; Hodges, Joseph T; Plusquellic, David F

2016-05-16

Dual-comb spectroscopy allows for the rapid, multiplexed acquisition of high-resolution spectra without the need for moving parts or low-resolution dispersive optics. This method of broadband spectroscopy is most often accomplished via tight phase locking of two mode-locked lasers or via sophisticated signal processing algorithms, and therefore, long integration times of phase coherent signals are difficult to achieve. Here we demonstrate an alternative approach to dual-comb spectroscopy using two phase modulator combs originating from a single continuous-wave laser capable of > 2 hours of coherent real-time averaging. The dual combs were generated by driving the phase modulators with step-recovery diodes where each comb consisted of > 250 teeth with 203 MHz spacing and spanned > 50 GHz region in the near-infrared. The step-recovery diodes are passive devices that provide low-phase-noise harmonics for efficient coupling into an enhancement cavity at picowatt optical powers. With this approach, we demonstrate the sensitivity to simultaneously monitor ambient levels of CO₂, CO, HDO, and H₂O in a single spectral region at a maximum acquisition rate of 150 kHz. Robust, compact, low-cost and widely tunable dual-comb systems could enable a network of distributed multiplexed optical sensors.

Low-level laser therapy in treatment of neurosensory deficit following surgical procedures

NASA Astrophysics Data System (ADS)

Ladalardo, Thereza C.; Brugnera, Aldo, Jr.; Pinheiro, Antonio L. B.; Takamoto, Marcia; Campos, Roberto A. d. C.

2001-04-01

In this report of clinical cases of peripheral nerve lesions, we evaluate the efficiency of the diode laser in treating six patients - three female and three male, age ranging from 25 to 36 years - who presented tongue paresthesia after surgical procedures which demanded regional mandible anaesthetic blockage. The patients' presented symptomatology was the absence of gustative sensitivity, the decrease of sensitivity and the increase of the nociceptive threshold on the affected side of the tongue. The treatment was carried out with a diode laser of 50mW, 780nm, continuous wave emission, spot size 3mm, and total dosage of 18 joules per session. We used a verbal scale to measure the intensity of the sensitive response both before and after treatment. The treatment module comprised two weekly sessions over a period of five consecutive weeks. After evaluation of the symptom condition, the patients would undergo another treatment module if necessary. This method of treatment proved to be efficient, resulting in restored sensitivity in al six treated patients. Only one patient reported a residual abnormality sensation concerning the tongue dimension but no discomfort at all. All 6 treated patients were evaluated in a follow-up period of thirty, sixty and ninety days post- treatment.

Reliable high-power diode lasers: thermo-mechanical fatigue aspects

NASA Astrophysics Data System (ADS)

Klumel, Genady; Gridish, Yaakov; Szafranek, Igor; Karni, Yoram

2006-02-01

High power water-cooled diode lasers are finding increasing demand in biomedical, cosmetic and industrial applications, where repetitive cw (continuous wave) and pulsed cw operation modes are required. When operating in such modes, the lasers experience numerous complete thermal cycles between "cold" heat sink temperature and the "hot" temperature typical of thermally equilibrated cw operation. It is clearly demonstrated that the main failure mechanism directly linked to repetitive cw operation is thermo-mechanical fatigue of the solder joints adjacent to the laser bars, especially when "soft" solders are used. Analyses of the bonding interfaces were carried out using scanning electron microscopy. It was observed that intermetallic compounds, formed already during the bonding process, lead to the solders fatigue both on the p- and n-side of the laser bar. Fatigue failure of solder joints in repetitive cw operation reduces useful lifetime of the stacks to hundreds hours, in comparison with more than 10,000 hours lifetime typically demonstrated in commonly adopted non-stop cw reliability testing programs. It is shown, that proper selection of package materials and solders, careful design of fatigue sensitive parts and burn-in screening in the hard pulse operation mode allow considerable increase of lifetime and reliability, without compromising the device efficiency, optical power density and compactness.

Effect of 830 nm Diode Laser Irradiation of Root Canal on Bond Strength of Metal and Fiber Post.

PubMed

Strefezza, Claudia; Amaral, Marcello Magri; Quinto, José; Gouw-Soares, Sheila Cynthia; Zamataro, Claudia Bianchi; Zezell, Denise Maria

2018-05-16

The correct selections of the cementing agent, the endodontic post material and placement protocol are critical to provide an increased longevity of the teeth that went through endodontic treatment. The irradiation with diode laser before post cementation, can promote an antimicrobial effect. However, there is a lack of information about the effect of 830 nm diode laser on the post bond strength. This study analyzed the effect of dentin root canal irradiation with high-intensity diode laser, at 830 nm, operating in continuous or pulsed mode, on the retention of metal or fiber posts, cemented with self-etching resinous composite (Panavia F) and zinc phosphate cement (ZnPO 4 ). Human roots were irradiated with diode laser (continuous and pulsed mode). The fiber posts were luted with Panavia F and the metal posts with Panavia F or ZnPO 4 cement. Specimens were sectioned into three sections (cervical, middle, and apical). The bond strength was measured by a push-out mechanical analysis. For the statistical analysis, a three-way ANOVA test was applied following a Tukey's pairwise comparison with a significance level of p = 0.05. The irradiated groups presented higher bond strength compared with nonirradiated group (p < 0.05), and the cervical and middle thirds presented higher on bond strength than the apical. The association of metal post and Panavia F presented higher bond strength when irradiated on continuous mode (p < 0.05). Fiber post and Panavia F presented higher bond strength associated to pulsed mode. The mode seems not to make a significant difference. These results corroborate the importance of the post bond to dentin and root canal debris removal to increase the tooth longevity. It was shown that the dentin to post bond strength were enhanced by the diode laser irradiation either on continuous or pulsed modes.

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

Photobiomodulation with Pulsed and Continuous Wave Near-Infrared Laser (810 nm, Al-Ga-As) Augments Dermal Wound Healing in Immunosuppressed Rats

PubMed Central

Keshri, Gaurav K.; Gupta, Asheesh; Yadav, Anju; Sharma, Sanjeev K.; Singh, Shashi Bala

2016-01-01

Chronic non-healing cutaneous wounds are often vulnerable in one or more repair phases that prevent normal healing and pose challenges to the use of conventional wound care modalities. In immunosuppressed subject, the sequential stages of healing get hampered, which may be the consequences of dysregulated or stagnant wound inflammation. Photobiomodulation (PBM) or low-level laser (light) therapy (LLLT) emerges as a promising drug-free, non-invasive biophysical approach for promoting wound healing, reduction of inflammation, pain and restoration of functions. The present study was therefore undertaken to evaluate the photobiomodulatory effects of 810 nm diode laser (40 mW/cm2; 22.6 J/cm2) with pulsed (10 and 100 Hz, 50% duty cycle) and continuous wave on full-thickness excision-type dermal wound healing in hydrocortisone-induced immunosuppressed rats. Results clearly delineated that 810 nm PBM at 10 Hz was more effective over continuous and 100 Hz frequency in accelerating wound healing by attenuating the pro-inflammatory markers (NF-kB, TNF-α), augmenting wound contraction (α-SM actin), enhancing cellular proliferation, ECM deposition, neovascularization (HIF-1α, VEGF), re-epithelialization along with up-regulated protein expression of FGFR-1, Fibronectin, HSP-90 and TGF-β2 as compared to the non-irradiated controls. Additionally, 810 nm laser irradiation significantly increased CCO activity and cellular ATP contents. Overall, the findings from this study might broaden the current biological mechanism that could be responsible for photobiomodulatory effect mediated through pulsed NIR 810 nm laser (10 Hz) for promoting dermal wound healing in immunosuppressed subjects. PMID:27861614

Coupling of an applied field magnetically insulated ion diode to a high power magnetically insulated transmission line system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maenchen, J.E.

1983-01-01

The coupling of energy from a high power pulsed accelerator through a long triplate magnetically insulated transmission line (MITL) in vacuum to an annular applied magnetic field insulated extraction ion diode is examined. The narrow power transport window and the wave front erosion of the MITL set stringent impedance history conditions on the diode load. A new ion diode design developed to satisfy these criteria with marginal electron insulation is presented. The LION accelerator is used to provide a positive polarity 1.5 MV, 350 kA, 40 ns FWHM pulse with a 30 kA/ns current rate from a triplate MITL source.more » A transition converts the triplate into a cylindrical cross section which flares into the ion diode load. Extensive current and voltage measurements performed along this structure and on the extracted ion beam provide conclusive evidence that the self insulation condition of the MITL is maintained in the transition by current loss alone. The ion diode utilizes a radial magnetic field between a grounded cathode annular emission tip and a disk anode. A 50 cm/sup 2/ dielectric/metal anode area serves as the ion plasma source subject to direct electron bombardment from the opposing cathode tip under marginal magnetic insulation conditions. The ions extracted cross the radial magnetic field and exit the diode volume as an annular cross section beam of peak current about 100 kA. The diode current gradually converts from the initial electron flow to nearly 100% ion current af« less

Diode laser application in soft tissue oral surgery.

PubMed

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. The diode laser can be used as a modality for oral soft tissue surgery.

Diode Laser Application in Soft Tissue Oral Surgery

PubMed Central

Azma, Ehsan; Safavi, Nassimeh

2013-01-01

Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

Bracket debonding by mid-infrared laser radiation

NASA Astrophysics Data System (ADS)

Jelínková, H.; Šulc, J.; Dostálová, T.; Koranda, P.; Němec, M.; Hofmanova, P.

2009-03-01

The purpose of the study was to determine the proper laser radiation for ceramic bracket debonding and the investigation of the tooth root temperature injury. The debonding was investigated by diode-pumped continuously running Tm:YAP and Nd:YAG lasers, and by GaAs laser diode generating radiation with the wavelengths 1.997 μm, 1.444 μm, and 0.808 μm, respectively. The possibility of brackets removal by laser radiation was investigated together with the tooth and, it specifically, root temperature rise. From the results it follows that continuously running diode pumped Tm:YAG or Nd:YAG laser generating wavelengths 1.997 μm or 1.444 μm, respectively, having the output power 1 W can be good candidates for ceramic brackets debonding.

Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons

PubMed Central

Yao, Yung-Chi; Hwang, Jung-Min; Yang, Zu-Po; Haung, Jing-Yu; Lin, Chia-Ching; Shen, Wei-Chen; Chou, Chun-Yang; Wang, Mei-Tan; Huang, Chun-Ying; Chen, Ching-Yu; Tsai, Meng-Tsan; Lin, Tzu-Neng; Shen, Ji-Lin; Lee, Ya-Ju

2016-01-01

Enhancement of the external quantum efficiency of a GaN-based vertical-type light emitting diode (VLED) through the coupling of localized surface plasmon (LSP) resonance with the wave-guided mode light is studied. To achieve this experimentally, Ag nanoparticles (NPs), as the LSP resonant source, are drop-casted on the most top layer of waveguide channel, which is composed of hydrothermally synthesized ZnO nanorods capped on the top of GaN-based VLED. Enhanced light-output power and external quantum efficiency are observed, and the amount of enhancement remains steady with the increase of the injected currents. To understand the observations theoretically, the absorption spectra and the electric field distributions of the VLED with and without Ag NPs decorated on ZnO NRs are determined using the finite-difference time-domain (FDTD) method. The results prove that the observation of enhancement of the external quantum efficiency can be attributed to the creation of an extra escape channel for trapped light due to the coupling of the LSP with wave-guided mode light, by which the energy of wave-guided mode light can be transferred to the efficient light scattering center of the LSP. PMID:26935648

Pseudo-Random Modulation of a Laser Diode for Generating Ultrasonic Longitudinal Waves

NASA Technical Reports Server (NTRS)

Madaras, Eric I.; Anatasi, Robert F.

2004-01-01

Laser generated ultrasound systems have historically been more complicated and expensive than conventional piezoelectric based systems, and this fact has relegated the acceptance of laser based systems to niche applications for which piezoelectric based systems are less suitable. Lowering system costs, while improving throughput, increasing ultrasound signal levels, and improving signal-to-noise are goals which will help increase the general acceptance of laser based ultrasound. One current limitation with conventional laser generated ultrasound is a material s damage threshold limit. Increasing the optical power to generate more signal eventually damages the material being tested due to rapid, high heating. Generation limitations for laser based ultrasound suggests the use of pulse modulation techniques as an alternate generation method. Pulse modulation techniques can spread the laser energy over time or space, thus reducing laser power densities and minimizing damage. Previous experiments by various organizations using spatial or temporal pulse modulation have been shown to generate detectable surface, plate, and bulk ultrasonic waves with narrow frequency bandwidths . Using narrow frequency bandwidths improved signal detectability, but required the use of expensive and powerful lasers and opto-electronic systems. The use of a laser diode to generate ultrasound is attractive because of its low cost, small size, light weight, simple optics and modulation capability. The use of pulse compression techniques should allow certain types of laser diodes to produce usable ultrasonic signals. The method also does not need to be limited to narrow frequency bandwidths. The method demonstrated here uses a low power laser diode (approximately 150 mW) that is modulated by controlling the diode s drive current and the resulting signal is recovered by cross correlation. A potential application for this system which is briefly demonstrated is in detecting signals in thick composite materials where attenuation is high and signal amplitude and bandwidth are at a premium.

Ionization tube simmer current circuit

DOEpatents

Steinkraus, R.F. Jr.

1994-12-13

A highly efficient flash lamp simmer current circuit utilizes a fifty percent duty cycle square wave pulse generator to pass a current over a current limiting inductor to a full wave rectifier. The DC output of the rectifier is then passed over a voltage smoothing capacitor through a reverse current blocking diode to a flash lamp tube to sustain ionization in the tube between discharges via a small simmer current. An alternate embodiment of the circuit combines the pulse generator and inductor in the form of an FET off line square wave generator with an impedance limited step up output transformer which is then applied to the full wave rectifier as before to yield a similar simmer current. 6 figures.

Ionization tube simmer current circuit

DOEpatents

Steinkraus, Jr., Robert F.

1994-01-01

A highly efficient flash lamp simmer current circuit utilizes a fifty percent duty cycle square wave pulse generator to pass a current over a current limiting inductor to a full wave rectifier. The DC output of the rectifier is then passed over a voltage smoothing capacitor through a reverse current blocking diode to a flash lamp tube to sustain ionization in the tube between discharges via a small simmer current. An alternate embodiment of the circuit combines the pulse generator and inductor in the form of an FET off line square wave generator with an impedance limited step up output transformer which is then applied to the full wave rectifier as before to yield a similar simmer current.

A new pulse width reduction technique for pulsed electron paramagnetic resonance spectroscopy.

PubMed

Ohba, Yasunori; Nakazawa, Shigeaki; Kazama, Shunji; Mizuta, Yukio

2008-03-01

We present a new technique for a microwave pulse modulator that generates a short microwave pulse of approximately 1ns for use in an electron paramagnetic resonance (EPR) spectrometer. A quadruple-frequency multiplier that generates a signal of 16-20GHz from an input of 4-5GHz was employed to reduce the rise and fall times of the pulse prepared by a PIN diode switch. We examined the transient response characteristics of a commercial frequency multiplier and found that the device can function as a multiplier for pulsed signal even though it was designed for continuous wave operation. We applied the technique to a Ku band pulsed EPR spectrometer and successfully observed a spin echo signal with a broad excitation bandwidth of approximately 1.6mT using 80 degrees pulses of 1.5ns.

High bandwidth underwater optical communication.

PubMed

Hanson, Frank; Radic, Stojan

2008-01-10

We report error-free underwater optical transmission measurements at 1 Gbit/s (10(9) bits/s) over a 2 m path in a laboratory water pipe with up to 36 dB of extinction. The source at 532 nm was derived from a 1064 nm continuous-wave laser diode that was intensity modulated, amplified, and frequency doubled in periodically poled lithium niobate. Measurements were made over a range of extinction by the addition of a Mg(OH)(2) and Al(OH)(3) suspension to the water path, and we were not able to observe any evidence of temporal pulse broadening. Results of Monte Carlo simulations over ocean water paths of several tens of meters indicate that optical communication data rates >1 Gbit/s can be supported and are compatible with high-capacity data transfer applications that require no physical contact.

Saturable absorber Q- and gain-switched all-Yb3+ all-fiber laser at 976 and 1064 nm.

PubMed

Tsai, Tzong-Yow; Fang, Yen-Cheng; Huang, Huai-Min; Tsao, Hong-Xi; Lin, Shih-Ting

2010-11-08

We demonstrate a novel passively pulsed all-Yb3+ all-fiber laser pumped by a continuous-wave 915-nm pump laser diode. The laser was saturable absorber Q-switched at 976 nm and gain-switched at 1064 nm, using the method of mode-field-area mismatch. With a pump power of 
105 mW, the laser iteratively produced a 976-nm pulse with an energy of 2.8 μJ and a duration of 280 ns, followed by a 1064-nm pulse with 1.1 μJ and a 430-ns duration at a repetition rate of 9 kHz. A set of rate equations was established to simulate the self-balancing mechanism and the correlation between the Q- and gain-switched photon numbers and the populations of the gain and absorber fibers.

Spectral and laser properties of Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 crystal at 1.55 µm

NASA Astrophysics Data System (ADS)

Gong, Guoliang; Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-04-01

An Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 (CNGS) crystal was grown by the Czochralski method. Spectral properties of the crystal, including the polarized absorption and fluorescence spectra, the fluorescence decay, as well as the energy transfer efficiency from Yb3+ to Er3+ were investigated in detail. End-pumped by a 976 nm diode laser, a 1556 nm continuous-wave laser with a maximum output power of 202 mW and a slope efficiency of 11.4% was achieved in the Er,Yb,Ce:CNGS crystal. The results indicate the Er,Yb,Ce:CNGS crystal is a promising 1.55 µm laser gain medium.

Energy Pooling, Ion Recombination, and Reactions of Rubidium and Cesium in Hydrocarbon Gasses.

NASA Astrophysics Data System (ADS)

Bresler, Sean Michael; Park, J.; Heaven, Michael

2017-06-01

Diode Pumped Alkali Lasers (DPAL) are continuous wave lasers, potentially capable of megawatt average powers. These lasers exploit the D1 and D2 lines of alkali metals resulting in a 3-level laser with the lasing transition in the near infrared region of the electromagnetic spectrum. Energy pooling processes involving collisions between excited alkali metals cause a fraction of the gain media to be highly excited and eventually ionized. These high energy cesium atoms and ions chemically react with small hydrocarbons utilized as buffer gasses for the system, depleting the gain media. A kinetic model supported by experimental data is introduced to explain the cumulative effects of optical trapping, energy pooling, and chemical reactivity in heavy alkali metal (Rb, Cs) systems. Spectroscopic studies demonstrating metal hydride formation will also be presented.

Minority-carrier lifetime in InP as a function of light bias

NASA Technical Reports Server (NTRS)

Yater, Jane A.; Weinberg, I.; Jenkins, Phillip P.; Landis, Geoffrey A.

1995-01-01

Minority-carrier lifetime in InP is studied as a function of doping level and laser intensity using time-resolved photoluminescence. A continuous wave diode laser illuminates bulk InP and acts as a light bias, injecting a steady-state concentration of carriers. A 200 ps laser pulse produces a small transient signal on top of the steady-state luminescence, allowing lifetime to be measured directly as a function of incident intensity. For p-InP, lifetime increases with light bias up to a maximum value. Bulk recombination centers are presumably filled to saturation, allowing minority carriers to live longer. The saturation bias scales with dopant concentration for a particular dopant species. As light bias is increased for n-InP, minority-carrier lifetime increases slightly but then decreases, suggesting radiative recombination as a dominant decay mechanism.

Effects of polarization mode dispersion on polarization-entangled photons generated via broadband pumped spontaneous parametric down-conversion

PubMed Central

Lim, Hyang-Tag; Hong, Kang-Hee; Kim, Yoon-Ho

2016-01-01

An inexpensive and compact frequency multi-mode diode laser enables a compact two-photon polarization entanglement source via the continuous wave broadband pumped spontaneous parametric down-conversion (SPDC) process. Entanglement degradation caused by polarization mode dispersion (PMD) is one of the critical issues in optical fiber-based polarization entanglement distribution. We theoretically and experimentally investigate how the initial entanglement is degraded when the two-photon polarization entangled state undergoes PMD. We report an effect of PMD unique to broadband pumped SPDC, equally applicable to pulsed pumping as well as cw broadband pumping, which is that the amount of the entanglement degradation is asymmetrical to the PMD introduced to each quantum channel. We believe that our results have important applications in long-distance distribution of polarization entanglement via optical fiber channels. PMID:27174100

Direct inscription of Bragg gratings into coated fluoride fibers for widely tunable and robust mid-infrared lasers.

PubMed

Bharathan, Gayathri; Woodward, Robert I; Ams, Martin; Hudson, Darren D; Jackson, Stuart D; Fuerbach, Alex

2017-11-27

We report the development of a widely tunable all-fiber mid-infrared laser system based on a mechanically robust fiber Bragg grating (FBG) which was inscribed through the polymer coating of a Ho 3+ -Pr 3+ co-doped double clad ZBLAN fluoride fiber by focusing femtosecond laser pulses into the core of the fiber without the use of a phase mask. By applying mechanical tension and compression to the FBG while pumping the fiber with an 1150 nm laser diode, a continuous wave (CW) all-fiber laser with a tuning range of 37 nm, centered at 2870 nm, was demonstrated with up to 0.29 W output power. These results pave the way for the realization of compact and robust mid-infrared fiber laser systems for real-world applications in spectroscopy and medicine.

Experimental research on the stability and the multilongitudinal mode interference of bidirectional outputs of LD-pumped solid state ring laser

NASA Astrophysics Data System (ADS)

Wan, Shunping; Tian, Qian; Sun, Liqun; Yao, Minyan; Mao, Xianhui; Qiu, Hongyun

2004-05-01

This paper reports an experimental research on the stability of bidirectional outputs and multi-longitudinal mode interference of laser diode end-pumped Nd:YVO4 solid-state ring laser (DPSSL). The bidirectional, multi-longitudinal and TEM00 mode continuous wave outputs are obtained and the output powers are measured and their stabilities are analyzed respectively. The spectral characteristic of the outputs is measured. The interfering pattern of the bidirectional longitudinal mode outputs is obtained and analyzed in the condition of the ring cavity with rotation velocity. The movement of the interfering fringe of the multi-longitudinal modes is very sensitive to the deformation of the setup base and the fluctuation of the intracavity air, but is stationary or randomly dithers when the stage is rotating.

Eigenpolarization theory of monolithic nonplanar ring oscillators

NASA Technical Reports Server (NTRS)

Nilsson, Alan C.; Gustafson, Eric K.; Byer, Robert L.

1989-01-01

Diode-laser-pumped monolithic nonplanar ring oscillators (NPROs) in an applied magnetic field can operate as unidirectional traveling-wave lasers. The diode laser pumping, monolithic construction, and unidirectional oscillation lead to narrow linewidth radiation. Here, a comprehensive theory of the eigenpolarizations of a monolithic NPRO is presented. It is shown how the properties of the integral optical diode that forces unidirectional operation depend on the choice of the gain medium, the applied magnetic field, the output coupler, and the geometry of the nonplanar ring light path. Using optical equivalence theorems to gain insight into the polarization characteristics of the NPRO, a strategy for designing NPROs with low thresholds and large loss nonreciprocities is given. An analysis of the eigenpolarizations for one such NPRO is presented, alternative optimization approaches are considered, and the prospects for further reducing the linewidths of these lasers are briefly discussed.

Gap Excitations and Series Loads in Microstrip Lines: Equivalent Network Characterization with Application to THz Circuits

NASA Technical Reports Server (NTRS)

Neto, Andrea; Siegel, Peter H.

2001-01-01

At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.

Soliton production with nonlinear homogeneous lines

DOE PAGES

Elizondo-Decanini, Juan M.; Coleman, Phillip D.; Moorman, Matthew W.; ...

2015-11-24

Low- and high-voltage Soliton waves were produced and used to demonstrate collision and compression using diode-based nonlinear transmission lines. Experiments demonstrate soliton addition and compression using homogeneous nonlinear lines. We built the nonlinear lines using commercially available diodes. These diodes are chosen after their capacitance versus voltage dependence is used in a model and the line design characteristics are calculated and simulated. Nonlinear ceramic capacitors are then used to demonstrate high-voltage pulse amplification and compression. The line is designed such that a simple capacitor discharge, input signal, develops soliton trains in as few as 12 stages. We also demonstrated outputmore » voltages in excess of 40 kV using Y5V-based commercial capacitors. The results show some key features that determine efficient production of trains of solitons in the kilovolt range.« less

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

A high power diode-side-pumped Nd:YAG/BaWO4 Raman laser at 1103 nm

NASA Astrophysics Data System (ADS)

Li, Lei; Zhang, Xingyu; Liu, Zhaojun; Wang, Qingpu; Cong, Zhenhua; Zhang, Yuangeng; Wang, Weitao; Wu, Zhenguo; Zhang, Huaijin

2013-04-01

Pulsed operation at 1103 nm of a diode-side-pumped Nd:YAG laser with intracavity Raman shifting in BaWO4 is reported. The first Stokes wavelength at 1103 nm was generated by a Raman shift of 332 cm-1 from the fundamental wave (1064 nm). A maximum power at 1103 nm of 9.4 W was obtained for a diode pump power of 115 W at a pulse repetition rate of 15 kHz. The pump-to-Stokes conversion efficiency was up to 8.2%. When the output power at 1103 nm was over 7 W, a second Stokes line at 1145 nm was also observed in the experiment. Our research indicates that efficient Raman conversion can be realized by a Raman frequency shift at 332 cm-1 in BaWO4 Raman lasers.

Submillimeter wave detection with superconducting tunnel diodes

NASA Technical Reports Server (NTRS)

Wengler, Michael J.

1992-01-01

Superconductor-Insulator-Superconductor (SIS) diodes are the detector elements in the most sensitive heterodyne receivers available from 100 to 500 GHz. SIS mixers are the front end of radio astronomical systems around the world. SIS mixer technology is being extended to 1 THz and higher frequencies for eventual use on spaceborne astronomical experiments. Here is a short review of submillimeter SIS mixers. The role of impedance matching in the proper design of an SIS mixer is described. A variety of methods for achieving good impedance match at submillimeter frequencies are presented. The experimental state of the submillimeter SIS mixer art is described and summarized.

Semiconductor millimeter wavelength electronics

NASA Astrophysics Data System (ADS)

Rosenbaum, F. J.

1985-12-01

This final report summarizes the results of research carried out on topics in millimeter wavelength semiconductor electronics under an ONR Selected Research Opportunity program. Study areas included III-V compound semiconductor growth and characterization, microwave and millimeter wave device modeling, fabrication and testing, and the development of new device concepts. A new millimeter wave mixer and detector, the Gap diode was invented. Topics reported on include ballistic transport, Zener oscillations, impurities in GaAs, electron velocity-electric field calculation and measurements, etc., calculations.

Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode.

PubMed

Klinkhammer, Sönke; Liu, Xin; Huska, Klaus; Shen, Yuxin; Vanderheiden, Sylvia; Valouch, Sebastian; Vannahme, Christoph; Bräse, Stefan; Mappes, Timo; Lemmer, Uli

2012-03-12

The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solutions on cm-scale surface gratings of different periods. We report optically pumped continuously tunable laser emission of 13 nm in the blue, 16 nm in the green and 19 nm in the red spectral region on a single chip respectively. Tuning behavior can be described with the Bragg-equation and the measured thickness profile. The laser threshold is low enough that inexpensive laser diodes can be used as pump sources.

Ultra-low input power long-wavelength GaSb type-I laser diodes at 2.7-3.0 μm

NASA Astrophysics Data System (ADS)

Vizbaras, Augustinas; Greibus, Mindaugas; Dvinelis, Edgaras; Trinkūnas, Augustinas; Kovalenkovas, Deividas; Šimonytė, Ieva; Vizbaras, Kristijonas

2014-02-01

Mid-infrared spectral region (2-4 μm) is gaining significant attention recently due to the presence of numerous enabling applications in the field of gas sensing, medical, environmental and defense applications. Major requirement for these applications is the availability of laser sources in this spectral window. Type-I GaSb-based laser diodes are ideal candidates for these applications being compact, electrically pumped, power efficient and able to operate at room temperature in continuous-wave. Moreover, due to the nature of type-I transition; these devices have a characteristic low operation voltage, typically below 1 V, resulting in low power consumption, and high-temperature of operation. In this work, we present recent progress of 2.7 μm - 3.0 μm wavelength single-spatial mode GaSb type-I laser diode development at Brolis Semiconductors. Experimental device structures were grown by solid-source multi-wafer MBE, consisting of an active region with 2 compressively strained (~1.3 %-1.5 %) GaInAsSb quantum wells with GaSb barriers for 2.7 μm devices and quinternary AlGaInAsSb barriers for 3.0 μm devices. Epi-wafers were processed into a narrow-ridge (2-4 μm) devices and mounted p-side up on CuW heatsink. Devices exhibited very low CW threshold powers of < 100 mW, and single spatial mode (TE00) operation with room-temperature output powers up to 40 mW in CW mode. Operating voltage was as low as 1.2 V at 1.2 A. As-cleaved devices worked CW up to 50 deg C.

Highly doped layer for tunnel junctions in solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam

NASA Astrophysics Data System (ADS)

Kanskar, M.; Bao, L.; Chen, Z.; Dawson, D.; DeVito, M.; Dong, W.; Grimshaw, M.; Guan, X.; Hemenway, M.; Martinsen, R.; Urbanek, W.; Zhang, S.

2017-02-01

High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.

Diode Laser Ear Piercing: A Novel Technique.

PubMed

Suseela, Bibilash Babu; Babu, Preethitha; Chittoria, Ravi Kumar; Mohapatra, Devi Prasad

2016-01-01

Earlobe piercing is a common office room procedure done by a plastic surgeon. Various methods of ear piercing have been described. In this article, we describe a novel method of laser ear piercing using the diode laser. An 18-year-old female patient underwent an ear piercing using a diode laser with a power of 2.0 W in continuous mode after topical local anaesthetic and pre-cooling. The diode laser was fast, safe, easy to use and highly effective way of ear piercing. The advantages we noticed while using the diode laser over conventional methods were more precision, minimal trauma with less chances of hypertrophy and keloids, no bleeding with coagulation effect of laser, less time taken compared to conventional method and less chance of infection due to thermal heat effect of laser.

35 GHz integrated circuit rectifying antenna with 33 percent efficiency

NASA Technical Reports Server (NTRS)

Yoo, T.-W.; Chang, K.

1991-01-01

A 35 GHz integrated circuit rectifying antenna (rectenna) has been developed using a microstrip dipole antenna and beam-lead mixer diode. Greater than 33 percent conversion efficiency has been achieved. The circuit should have applications in microwave/millimeter-wave power transmission and detection.

Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Maximov, M. V.; Gordeev, N. Y.; Kaluzhniy, N. A.; Mintairov, S. A.; Payusov, A. S.; Shernyakov, Yu. M.

2016-03-01

Tilted Wave Lasers (TWLs) based on optically coupled thin active waveguide and thick passive waveguide offer an ultimate solution for thick-waveguide diode laser, preventing catastrophic optical mirror damage and thermal smile in laser bars, providing robust operation in external cavity modules thus enabling wavelength division multiplexing and further increase in brightness enabling direct applications of laser diodes in the mainstream material processing. We show that by proper engineering of the waveguide one can realize high performance laser diodes at different tilt angles of the vertical lobes. Two vertical lobes directed at various angles (namely, +/-27° or +/-9°) to the junction plane are experimentally realized by adjusting the compositions and the thicknesses of the active and the passive waveguide sections. The vertical far field of a TWL with the two +/-9° vertical beams allows above 95% of all the power to be concentrated within a vertical angle below 25°, the fact which is important for laser stack applications using conventional optical coupling schemes. The full width at half maximum of each beam of the value of 1.7° evidences diffraction- limited operation. The broad area (50 μm) TWL chips at the cavity length of 1.5 mm reveal a high differential efficiency ~90% and a current-source limited pulsed power >42W for as-cleaved TWL device. Thus the power per facet length in a laser bar in excess of 8.4 kW/cm can be realized. Further, an ultimate solution for the smallest tilt angle is that where the two vertical lobes merge forming a single lobe directed at the zero angle is proposed.