Spectral reflectance properties of electroplated and converted zinc for use as a solar selective coating

NASA Technical Reports Server (NTRS)

Mcdonald, G. E.; Curtis, H. B.; Gianelos, L.

1975-01-01

The spectral reflectance properties of electroplated and chemically converted zinc were measured for both chromate and chloride conversion coatings. The reflectance properties were measured for various times of conversion and for conversion at various chromate concentrations. The values of absorptance, integrated over the solar spectrum, and of infrared emittance, integrated over black body radiation at 250 F were then calculated from the measured reflectance values. The interdependent variations of absorptance and infrared emittance were plotted. The results indicate that the optimum combination of the highest absorptance in the solar spectrum and the lowest emittance in the infrared of the converted electroplated zinc is produced by chromate conversion at 1/2 concentration of the standard NEOSTAR chromate black solution for 0.50 minute or by chloride conversion for 0.50 minute.

Solar energy conversion with photon-enhanced thermionic emission

NASA Astrophysics Data System (ADS)

Kribus, Abraham; Segev, Gideon

2016-07-01

Photon-enhanced thermionic emission (PETE) converts sunlight to electricity with the combined photonic and thermal excitation of charge carriers in a semiconductor, leading to electron emission over a vacuum gap. Theoretical analyses predict conversion efficiency that can match, or even exceed, the efficiency of traditional solar thermal and photovoltaic converters. Several materials have been examined as candidates for radiation absorbers and electron emitters, with no conclusion yet on the best set of materials to achieve high efficiency. Analyses have shown the complexity of the energy conversion and transport processes, and the significance of several loss mechanisms, requiring careful control of material properties and optimization of the device structure. Here we survey current research on PETE modeling, materials, and device configurations, outline the advances made, and stress the open issues and future research needed. Based on the substantial progress already made in this young topic, and the potential of high conversion efficiency based on theoretical performance limits, continued research in this direction is very promising and may yield a competitive technology for solar electricity generation.

A chip-scale, telecommunications-band frequency conversion interface for quantum emitters.

PubMed

Agha, Imad; Ates, Serkan; Davanço, Marcelo; Srinivasan, Kartik

2013-09-09

We describe a chip-scale, telecommunications-band frequency conversion interface designed for low-noise operation at wavelengths desirable for common single photon emitters. Four-wave-mixing Bragg scattering in silicon nitride waveguides is used to demonstrate frequency upconversion and downconversion between the 980 nm and 1550 nm wavelength regions, with signal-to-background levels > 10 and conversion efficiency of ≈ -60 dB at low continuous wave input pump powers (< 50 mW). Finite element simulations and the split-step Fourier method indicate that increased input powers of ≈ 10 W (produced by amplified nanosecond pulses, for example) will result in a conversion efficiency > 25 % in existing geometries. Finally, we present waveguide designs that can be used to connect shorter wavelength (637 nm to 852 nm) quantum emitters with 1550 nm.

Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L. (Inventor)

1992-01-01

This invention relates to a small particle selective emitter for converting thermal energy into narrow band radiation with high efficiency. The small particle selective emitter is used in combination with a photovoltaic array to provide a thermal to electrical energy conversion device. An energy conversion apparatus of this type is called a thermo-photovoltaic device. In the first embodiment, small diameter particles of a rare earth oxide are suspended in an inert gas enclosed between concentric cylinders. The rare earth oxides are used because they have the desired property of large emittance in a narrow wavelength band and small emittance outside the band. However, it should be emphasized that it is the smallness of the particles that enhances the radiation property. The small particle selective emitter is surrounded by a photovoltaic array. In an alternate embodiment, the small particle gas mixture is circulated through a thermal energy source. This thermal energy source can be a nuclear reactor, solar receiver, or combustor of a fossil fuel.

Ultrabroadband phased-array radio frequency (RF) receivers based on optical techniques

NASA Astrophysics Data System (ADS)

Overmiller, Brock M.; Schuetz, Christopher A.; Schneider, Garrett; Murakowski, Janusz; Prather, Dennis W.

2014-03-01

Military operations require the ability to locate and identify electronic emissions in the battlefield environment. However, recent developments in radio detection and ranging (RADAR) and communications technology are making it harder to effectively identify such emissions. Phased array systems aid in discriminating emitters in the scene by virtue of their relatively high-gain beam steering and nulling capabilities. For the purpose of locating emitters, we present an approach realize a broadband receiver based on optical processing techniques applied to the response of detectors in conformal antenna arrays. This approach utilizes photonic techniques that enable us to capture, route, and process the incoming signals. Optical modulators convert the incoming signals up to and exceeding 110 GHz with appreciable conversion efficiency and route these signals via fiber optics to a central processing location. This central processor consists of a closed loop phase control system which compensates for phase fluctuations induced on the fibers due to thermal or acoustic vibrations as well as an optical heterodyne approach for signal conversion down to baseband. Our optical heterodyne approach uses injection-locked paired optical sources to perform heterodyne downconversion/frequency identification of the detected emission. Preliminary geolocation and frequency identification testing of electronic emissions has been performed demonstrating the capabilities of our RF receiver.

The First NREL Conference on thermophotovoltaic generation of electricity: Proceedings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1994-08-01

This collection of abstracts from the July 1994 meeting contains various information on thermophotovoltaic (TPV) conversion and converters. Discussed topics include: the current status of TPV conversion, TPV tutorials, heat source and emitter technologies, advanced TPV devices, selective emitter theory and practice, programmatic and systems issues, device fundamentals, and device and material characterization.

Electronic transition imaging of carbon based materials: The photothreshold of melanin and thermionic field emission from diamond

NASA Astrophysics Data System (ADS)

Garguilo, Jacob

This study explores electronic transitions in carbon based materials through the use of a custom built, non rastering electron emission microscope. The specifics and history of electron emission are described as well as the equipment used in this study. The materials examined fall into two groups, melanosome films isolated from the human body and polycrystalline diamond tip arrays. A novel technique for determining the photothreshold of a heterogeneous material on a microscopic or smaller scale is developed and applied to melanosome films isolated from the hair, eyes, and brain of human donors. The conversion of the measured photothreshold on the vacuum scale to an electrochemical oxidation potential is discussed and the obtained data is considered based on this conversion. Pheomelanosomes isolated from human hair are shown to have significantly lower photoionization energy than eumelanosomes, indicating their likelihood as sources of oxidative stress. The ionization energies of the hair melanosomes are checked with complimentary procedures. Ocular melanosomes from the retinal pigment epithelium are measured as a function of patient age and melanosome shape. Lipofuscin, also found in the eye, is examined with the same microscopy technique and shown to have a significantly lower ionization threshold than RPE melanosomes. Neuromelanin from the substantia nigra is also examined and shown to have an ionization threshold close to that of eumelanin. A neuromelanin formation model is proposed based on these results. Polycrystalline diamond tip arrays are examined for their use as thermionic energy converter emitters. Thermionic energy conversion is accomplished through the combination of a hot electron emitter in conjunction with a somewhat cooler electron collector. The generated electron current can be used to do work in an external load. It is shown that the tipped structures of these samples result in enhanced emission over the surrounding flat areas, which may prove valuable in limiting the negative space charge effect in vacuum energy converting devices. Additionally, the effects of exceeding a threshold temperature for the films are shown, establishing a maximum operating regime for any device which incorporates hydrogen terminated diamond.

Progress in p(+)n InP solar cells fabricated by thermal diffusion

NASA Technical Reports Server (NTRS)

Faur, Mircea; Faur, Maria; Flood, D. J.; Brinker, D. J.; Weinberg, I.; Fatemi, N. S.; Vargas-Aburto, Carlos; Goradia, C.; Goradia, Manju

1992-01-01

In SPRAT XI, we proposed that p(sup +)n diffused junction InP solar cells should exhibit a higher conversion efficiency than their n(sup +)p counterparts. This was mainly due to the fact that our p(sup +)n (Cd,S) cell structures consistently showed higher V (sub OC) values than our n(sup +)p (S,Cd) structures. The highest V(sub OC) obtained with the p(sup +)n (Cd,S) cell configuration was 860 mV, as compared to the highest V(sub OC) 840 mV obtained with the n(sup +)p (S,Cd) configuration (AMO, 25 C). In this work, we present the performance results of our most recent thermally diffused cells using the p(sup +)n (Cd,S) structure. We have been able to fabricate cells with V(sub OC) values approaching 880 mV. Our best cell with an unoptimized front contact grid design (GS greater than or equal to 10%) showed a conversion efficiency of 13.4% (AMO, 25 C) without an AR coating layer. The emitter surface was passivated by a -50A P rich oxide. Achievement of such high V(sub OC) values was primarily due to the fabrication of emitter surfaces, having EPD densities as low as 2E2 cm(sup -2) and N(sub a)N(sub d) of about 3E18 cm (sup -3). In addition, our preliminary investigation of p(sup +)n structures seem to suggest that Cd-doped emitter cells are more radiation resistant than Zn-doped emitter cells against both high energy electron and proton irradiation.

Secondary electron ion source neutron generator

DOEpatents

Brainard, John P.; McCollister, Daryl R.

1998-01-01

A neutron generator employing an electron emitter, an ion source bombarded by the electrons from the electron emitter, a plasma containment zone, and a target situated between the plasma containment zone and the electron emitter. The target contains occluded deuterium, tritium, or a mixture thereof

Microstructure and thermal stability of Cu/Zr0.3Al0.7N/Zr0.2Al0.8N/Al34O60N6 cermet-based solar selective absorbing coatings

NASA Astrophysics Data System (ADS)

Meng, Jian-ping; Guo, Rui-rui; Li, Hu; Zhao, Lu-ming; Liu, Xiao-peng; Li, Zhou

2018-05-01

Solar selective absorbing coatings play a valuable role in photo-thermal conversion for high efficiency concentrating solar power systems (CSP). In this paper, a novel Cu/Zr0.3Al0.7N/Zr0.2Al0.8N/Al34O60N6 cermet-based solar selective absorbing coating was successfully deposited by ion beam assisted deposition. The optical properties, microstructure and element distribution in depth were investigated by spectroscopic ellipsometry, UV-vis-NIR spectrophotometer, transmission electron microscope (TEM) and Auger electron spectroscopy (AES), respectively. A high absorptance of 0.953 and a low thermal emittance of 0.079 at 400 °C are obtained by the integral computation according to the whole reflectance from 300 nm to 28,800 nm. After annealing treatment at 400 °C (in vacuum) for 192 h, the deposited coating exhibits the high thermal stability. Whereas, the photothermal conversion efficiency decreases from 12.10 to 6.86 due to the emittance increase after annealing at 600 °C for 192 h. Meanwhile, the nitrogen atom in the Zr0.3Al0.7N sub-layer diffuses toward the adjacent sub-layer due to the spinodal decomposition of metastable c-ZrAlN and the phase transition from c-AlN to h-AlN, which leads to the composition of the Zr0.3Al0.7N sub-layer deviates the initial design. This phenomenon has a guide effect for the thermal-stability improvement of cermet coatings. Additionally, a serious diffusion between copper and silicon substrate also contributes to the emittance increase.

High-yield, ultrafast, surface plasmon-enhanced, Au nanorod optical field electron emitter arrays.

PubMed

Hobbs, Richard G; Yang, Yujia; Fallahi, Arya; Keathley, Philip D; De Leo, Eva; Kärtner, Franz X; Graves, William S; Berggren, Karl K

2014-11-25

Here we demonstrate the design, fabrication, and characterization of ultrafast, surface-plasmon enhanced Au nanorod optical field emitter arrays. We present a quantitative study of electron emission from Au nanorod arrays fabricated by high-resolution electron-beam lithography and excited by 35 fs pulses of 800 nm light. We present accurate models for both the optical field enhancement of Au nanorods within high-density arrays, and electron emission from those nanorods. We have also studied the effects of surface plasmon damping induced by metallic interface layers at the substrate/nanorod interface on near-field enhancement and electron emission. We have identified the peak optical field at which the electron emission mechanism transitions from a 3-photon absorption mechanism to strong-field tunneling emission. Moreover, we have investigated the effects of nanorod array density on nanorod charge yield, including measurement of space-charge effects. The Au nanorod photocathodes presented in this work display 100-1000 times higher conversion efficiency relative to previously reported UV triggered emission from planar Au photocathodes. Consequently, the Au nanorod arrays triggered by ultrafast pulses of 800 nm light in this work may outperform equivalent UV-triggered Au photocathodes, while also offering nanostructuring of the electron pulse produced from such a cathode, which is of interest for X-ray free-electron laser (XFEL) development where nanostructured electron pulses may facilitate more efficient and brighter XFEL radiation.

Secondary electron ion source neutron generator

DOEpatents

Brainard, J.P.; McCollister, D.R.

1998-04-28

A neutron generator employing an electron emitter, an ion source bombarded by the electrons from the electron emitter, a plasma containment zone, and a target situated between the plasma containment zone and the electron emitter is disclosed. The target contains occluded deuterium, tritium, or a mixture thereof. 4 figs.

Field emission electron source

DOEpatents

Zettl, Alexander Karlwalter; Cohen, Marvin Lou

2000-01-01

A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm.sup.2 at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

High efficiency direct thermal to electric energy conversion from radioisotope decay using selective emitters and spectrally tuned solar cells

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Flood, Dennis J.; Lowe, Roland A.

1993-01-01

Thermophotovoltaic (TPV) systems are attractive possibilities for direct thermal-to-electric energy conversion, but have typically required the use of black body radiators operating at high temperatures. Recent advances in both the understanding and performance of solid rare-earth oxide selective emitters make possible the use of TPV at temperatures as low as 1200K. Both selective emitter and filter system TPV systems are feasible. However, requirements on the filter system are severe in order to attain high efficiency. A thin-film of a rare-earth oxide is one method for producing an efficient, rugged selective emitter. An efficiency of 0.14 and power density of 9.2 W/KG at 1200K is calculated for a hypothetical thin-film neodymia (Nd2O3) selective emitter TPV system that uses radioisotope decay as the thermal energy source.

High efficiency thermal to electric energy conversion using selective emitters and spectrally tuned solar cells

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Flood, Dennis J.; Lowe, Roland A.

1992-01-01

Thermophotovoltaic (TPV) systems are attractive possibilities for direct thermal-to-electric energy conversion, but have typically required the use of black body radiators operating at high temperatures. Recent advances in both the understanding and performance of solid rare-earth oxide selective emitters make possible the use of TPV at temperatures as low as 1500 K. Depending on the nature of parasitic losses, overall thermal-to-electric conversion efficiencies greater than 20 percent are feasible.

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

PubMed Central

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R.J. Dwayne

2016-01-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence. PMID:28008918

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

NASA Astrophysics Data System (ADS)

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R. J. Dwayne

2016-12-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence.

Measuring Beam Sizes and Ultra-Small Electron Emittances Using an X-ray Pinhole Camera.

PubMed

Elleaume, P; Fortgang, C; Penel, C; Tarazona, E

1995-09-01

A very simple pinhole camera set-up has been built to diagnose the electron beam emittance of the ESRF. The pinhole is placed in the air next to an Al window. An image is obtained with a CCD camera imaging a fluorescent screen. The emittance is deduced from the size of the image. The relationship between the measured beam size and the electron beam emittance depends upon the lattice functions alpha, beta and eta, the screen resolution, pinhole size and photon beam divergence. The set-up is capable of measuring emittances as low as 5 pm rad and is presently routinely used as both an electron beam imaging device and an emittance diagnostic.

Source brightness and useful beam current of carbon nanotubes and other very small emitters

NASA Astrophysics Data System (ADS)

Kruit, P.; Bezuijen, M.; Barth, J. E.

2006-01-01

The potential application of carbon nanotubes as electron sources in electron microscopes is analyzed. The resolution and probe current that can be obtained from a carbon nanotube emitter in a low-voltage scanning electron microscope are calculated and compared to the state of the art using Schottky electron sources. Many analytical equations for probe-size versus probe-current relations in different parameter regimes are obtained. It is shown that for most carbon nanotube emitters, the gun lens aberrations are larger than the emitters' virtual source size and thus restrict the microscope's performance. The result is that the advantages of the higher brightness of nanotube emitters are limited unless the angular emission current is increased over present day values or the gun lens aberrations are decreased. For some nanotubes with a closed cap, it is known that the emitted electron beam is coherent over the full emission cone. We argue that for such emitters the parameter ``brightness'' becomes meaningless. The influence of phase variations in the electron wave front emitted from such a nanotube emitter on the focusing of the electron beam is analyzed.

Evaluations of carbon nanotube field emitters for electron microscopy

NASA Astrophysics Data System (ADS)

Nakahara, Hitoshi; Kusano, Yoshikazu; Kono, Takumi; Saito, Yahachi

2009-11-01

Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I- V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6×109 A/m 2 sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.

A retractable electron emitter for the creation of unperturbed pure electron plasmas.

PubMed

Berkery, John W; Pedersen, Thomas Sunn; Sampedro, Luis

2007-01-01

A retractable electron emitter has been constructed for the creation of unperturbed pure electron plasmas on magnetic surfaces in the Columbia Non-neutral Torus stellarator. The previous method of electron emission using emitters mounted on stationary rods limited the confinement time to 20 ms. A pneumatically driven system that can retract from the magnetic axis to the last closed flux surface in less than 20 ms while filling the surfaces with electrons was designed. The motion of the retractable emitter was modeled with a system of dynamical equations. The measured position versus time of the emitter agrees well with the model and the fastest axis-to-edge retraction was measured to be 20 ms with 40 psig helium gas driving the pneumatic piston.

Free electron lasers for transmission of energy in space

NASA Technical Reports Server (NTRS)

Segall, S. B.; Hiddleston, H. R.; Catella, G. C.

1981-01-01

A one-dimensional resonant-particle model of a free electron laser (FEL) is used to calculate laser gain and conversion efficiency of electron energy to photon energy. The optical beam profile for a resonant optical cavity is included in the model as an axial variation of laser intensity. The electron beam profile is matched to the optical beam profile and modeled as an axial variation of current density. Effective energy spread due to beam emittance is included. Accelerators appropriate for a space-based FEL oscillator are reviewed. Constraints on the concentric optical resonator and on systems required for space operation are described. An example is given of a space-based FEL that would produce 1.7 MW of average output power at 0.5 micrometer wavelength with over 50% conversion efficiency of electrical energy to laser energy. It would utilize a 10 m-long amplifier centered in a 200 m-long optical cavity. A 3-amp, 65 meV electrostatic accelerator would provide the electron beam and recover the beam after it passes through the amplifier. Three to five shuttle flights would be needed to place the laser in orbit.

Low work function materials for microminiature energy conversion and recovery applications

DOEpatents

Zavadil, Kevin R.; Ruffner, Judith A.; King, Donald B.

2003-05-13

Low work function materials are disclosed together with methods for their manufacture and integration with electrodes used in thermionic conversion applications (specifically microminiature thermionic conversion applications). The materials include a mixed oxide system and metal in a compositionally modulated structure comprised of localized discontinuous structures of material that are deposited using techniques suited to IC manufacture, such as rf sputtering or CVD. The structures, which can include layers are then heated to coalescence yielding a thin film that is both durable and capable of electron emission under thermionic conversion conditions used for microminiature thermionic converters. Using the principles of the invention, thin film electrodes (emitters and collectors) required for microconverter technology are manufactured using a single process deposition so as to allow for full fabrication integration consistent with batch processing, and tailoring of emission/collection properties. In the preferred embodiment, the individual layers include mixed BaSrCaO, scandium oxide and tungsten.

Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

NASA Astrophysics Data System (ADS)

Chen, Teng; Elias, Luis R.

1995-02-01

This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations.

Microscale Digital Vacuum Electronic Gates

NASA Technical Reports Server (NTRS)

Manohara, Harish (Inventor); Mojarradi, Mohammed M. (Inventor)

2014-01-01

Systems and methods in accordance with embodiments of the invention implement microscale digital vacuum electronic gates. In one embodiment, a microscale digital vacuum electronic gate includes: a microscale field emitter that can emit electrons and that is a microscale cathode; and a microscale anode; where the microscale field emitter and the microscale anode are disposed within at least a partial vacuum; where the microscale field emitter and the microscale anode are separated by a gap; and where the potential difference between the microscale field emitter and the microscale anode is controllable such that the flow of electrons between the microscale field emitter and the microscale anode is thereby controllable; where when the microscale anode receives a flow of electrons, a first logic state is defined; and where when the microscale anode does not receive a flow of electrons, a second logic state is defined.

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

Beam position monitoring system at CESR

NASA Astrophysics Data System (ADS)

Billing, M. G.; Bergan, W. F.; Forster, M. J.; Meller, R. E.; Rendina, M. C.; Rider, N. T.; Sagan, D. C.; Shanks, J.; Sikora, J. P.; Stedinger, M. G.; Strohman, C. R.; Palmer, M. A.; Holtzapple, R. L.

2017-09-01

The Cornell Electron-positron Storage Ring (CESR) has been converted from a High Energy Physics electron-positron collider to operate as a dedicated synchrotron light source for the Cornell High Energy Synchrotron Source (CHESS) and to conduct accelerator physics research as a test accelerator, capable of studying topics relevant to future damping rings, colliders and light sources. Some of the specific topics that were targeted for the initial phase of operation of the storage ring in this mode, labeled CESRTA (CESR as a Test Accelerator), included 1) tuning techniques to produce low emittance beams, 2) the study of electron cloud development in a storage ring and 3) intra-beam scattering effects. The complete conversion of CESR to CESRTA occurred over a several year period and is described elsewhere. As a part of this conversion the CESR beam position monitoring (CBPM) system was completely upgraded to provide the needed instrumental capabilities for these studies. This paper describes the new CBPM system hardware, its function and representative measurements performed by the upgraded system.

Simulated Performance of the Wisconsin Superconducting Electron Gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

R.A. Bosch, K.J. Kleman, R.A. Legg

2012-07-01

The Wisconsin superconducting electron gun is modeled with multiparticle tracking simulations using the ASTRA and GPT codes. To specify the construction of the emittance-compensation solenoid, we studied the dependence of the output bunch's emittance upon the solenoid's strength and field errors. We also evaluated the dependence of the output bunch's emittance upon the bunch's initial emittance and the size of the laser spot on the photocathode. The results suggest that a 200-pC bunch with an emittance of about one mm-mrad can be produced for a free-electron laser.

Effect of electron beam cooling on transversal and longitudinal emittance of an external proton beam

NASA Astrophysics Data System (ADS)

Kilian, K.; Machner, H.; Magiera, A.; Prasuhn, D.; von Rossen, P.; Siudak, R.; Stein, H. J.; Stockhorst, H.

2018-02-01

Benefits of electron cooling to the quality of extracted ion beams from storage rings are discussed. The transversal emittances of an external proton beam with and without electron cooling at injection energy are measured with the GEM detector assembly. While the horizontal emittance remains the vertical emittance shrinks by the cooling process. The longitudinal momentum variance is also reduced by cooling.

Low emittance electron storage rings

NASA Astrophysics Data System (ADS)

Levichev, E. B.

2018-01-01

Low-emittance electron (positron) beams are essential for synchrotron light sources, linear collider damping rings, and circular Crab Waist colliders. In this review, the principles and methods of emittance minimization are discussed, prospects for developing relativistic electron storage rings with small beam phase volume are assessed, and problems related to emittance minimization are examined together with their possible solutions. The special features and engineering implementation aspects of various facilities are briefly reviewed.

Amorphous-diamond electron emitter

DOEpatents

Falabella, Steven

2001-01-01

An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli [El Cerrito, CA; Fabbri, Jason D [San Francisco, CA; Melosh, Nicholas A [Menlo Park, CA; Hussain, Zahid [Orinda, CA; Shen, Zhi-Xun [Stanford, CA

2012-04-10

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

2013-10-29

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Long-term, correlated emittance decrease in intense, high-brightness induction linacs

NASA Astrophysics Data System (ADS)

Carlsten, Bruce E.

1999-09-01

Simulations of high-brightness induction linacs often show a slow, long-term emittance decrease as the beam is matched from the electron gun into the linac. Superimposed on this long-term decrease are rapid emittance oscillations. These effects can be described in terms of correlations in the beam's radial phase space. The rapid emittance oscillations are due to transverse plasma oscillations, which stay nearly in phase for different radial positions within the beam. The initial emittance, just after the electron gun, is dominated by nonlinear focusing within the gun introduced by the anode exit hole. Due to the large space-charge force of an intense electron beam, the focusing of the beam through the matching section introduces an effective nonlinear force (from the change in the particles' potential energies) which counteracts the nonlinearities from the electron gun, leading to an average, long-term emittance decrease. Not all of the initial nonlinearity is removed by the matching procedure, and there are important consequences both for emittance measurements using solenoid focal length scans and for focusing the electron beam to a target.

Diamond fiber field emitters

DOEpatents

Blanchet-Fincher, Graciela B.; Coates, Don M.; Devlin, David J.; Eaton, David F.; Silzars, Aris K.; Valone, Steven M.

1996-01-01

A field emission electron emitter comprising an electrode formed of at least one diamond, diamond-like carbon or glassy carbon composite fiber, said composite fiber having a non-diamond core and a diamond, diamond-like carbon or glassy carbon coating on said non-diamond core, and electronic devices employing such a field emission electron emitter.

Development of chemically vapor deposited rhenium emitters of (0001) preferred crystal orientation

NASA Technical Reports Server (NTRS)

Yang, L.; Hudson, R. G.

1973-01-01

Rhenium thermionic emitters were prepared by the pyrolysis of rhenium chlorides formed by the chlorination of rhenium pellets. The impurity contents, microstructures, degrees of (0001) preferred crystal orientation, and vacuum electron work functions of these emitters were determined as a function of deposition parameters, such as substrate temperature, rhenium pellet temperature and chlorine flow rate. A correlation between vacuum electron work function and degree of (0001) preferred crystal orientation was established. Conditions for depositing porosity-free rhenium emitters of high vacuum electron work functions were defined. Finally, three cylindrical rhenium emitters were prepared under the optimum deposition conditions.

A Robust High Current Density Electron Gun

NASA Astrophysics Data System (ADS)

Mako, F.; Peter, W.; Shiloh, J.; Len, L. K.

1996-11-01

Proof-of-principle experiments are proposed to validate a new concept for a robust, high-current density Pierce electron gun (RPG) for use in klystrons and high brightness electron sources for accelerators. This rugged, long-life electron gun avoids the difficulties associated with plasma cathodes, thermionic emitters, and field emission cathodes. The RPG concept employs the emission of secondary electrons in a transmission mode as opposed to the conventional mode of reflection, i.e., electrons exit from the back face of a thin negative electron affinity (NEA) material, and in the same direction as the incident beam. Current amplification through one stage of a NEA material could be over 50 times. The amplification is accomplished in one or more stages consisting of one primary emitter and one or more secondary emitters. The primary emitter is a low current density robust emitter (e.g., thoriated tungsten). The secondary emitters are thin NEA electrodes which emit secondary electrons in the same direction as the incident beam. Specific application is targeted for a klystron gun to be used by SLAC with a cold cathode at 30-40 amps/cm^2 output from the secondary emission stage, a ~2 μs pulse length, and ~200 pulses/second.

Ion Motion Induced Emittance Growth of Matched Electron Beams in Plasma Wakefields.

PubMed

An, Weiming; Lu, Wei; Huang, Chengkun; Xu, Xinlu; Hogan, Mark J; Joshi, Chan; Mori, Warren B

2017-06-16

Plasma-based acceleration is being considered as the basis for building a future linear collider. Nonlinear plasma wakefields have ideal properties for accelerating and focusing electron beams. Preservation of the emittance of nano-Coulomb beams with nanometer scale matched spot sizes in these wakefields remains a critical issue due to ion motion caused by their large space charge forces. We use fully resolved quasistatic particle-in-cell simulations of electron beams in hydrogen and lithium plasmas, including when the accelerated beam has different emittances in the two transverse planes. The projected emittance initially grows and rapidly saturates with a maximum emittance growth of less than 80% in hydrogen and 20% in lithium. The use of overfocused beams is found to dramatically reduce the emittance growth. The underlying physics that leads to the lower than expected emittance growth is elucidated.

A cesium TELEC experiment at Lewis Research Center

NASA Technical Reports Server (NTRS)

Britt, E. J.

1979-01-01

The thermoelectronic laser energy converter (TELEC), was studied as a method of converting a 10.6 mm CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma was produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt. The magnitudes of these electric outputs were smaller than anticipated but consistent with the power levels of the laser during this experiment.

Simulation of decay processes and radiation transport times in radioactivity measurements

NASA Astrophysics Data System (ADS)

García-Toraño, E.; Peyres, V.; Bé, M.-M.; Dulieu, C.; Lépy, M.-C.; Salvat, F.

2017-04-01

The Fortran subroutine package PENNUC, which simulates random decay pathways of radioactive nuclides, is described. The decay scheme of the active nuclide is obtained from the NUCLEIDE database, whose web application has been complemented with the option of exporting nuclear decay data (possible nuclear transitions, branching ratios, type and energy of emitted particles) in a format that is readable by the simulation subroutines. In the case of beta emitters, the initial energy of the electron or positron is sampled from the theoretical Fermi spectrum. De-excitation of the atomic electron cloud following electron capture and internal conversion is described using transition probabilities from the LLNL Evaluated Atomic Data Library and empirical or calculated energies of released X rays and Auger electrons. The time evolution of radiation showers is determined by considering the lifetimes of nuclear and atomic levels, as well as radiation propagation times. Although PENNUC is designed to operate independently, here it is used in conjunction with the electron-photon transport code PENELOPE, and both together allow the simulation of experiments with radioactive sources in complex material structures consisting of homogeneous bodies limited by quadric surfaces. The reliability of these simulation tools is demonstrated through comparisons of simulated and measured energy spectra from radionuclides with complex multi-gamma spectra, nuclides with metastable levels in their decay pathways, nuclides with two daughters, and beta plus emitters.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY

2009-10-13

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY; Kewisch, Jorg [Wading River, NY; Chang, Xiangyun [Middle Island, NY

2007-06-05

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Theoretical insights into multiscale electronic processes in organic photovoltaics

NASA Astrophysics Data System (ADS)

Tretiak, Sergei

Present day electronic devices are enabled by design and implementation of precise interfaces that control the flow of charge carriers. This requires robust and predictive multiscale approaches for theoretical description of underlining complex phenomena. Combined with thorough experimental studies such approaches provide a reliable estimate of physical properties of nanostructured materials and enable a rational design of devices. From this perspective I will discuss first principle modeling of small-molecule bulk-heterojunction organic solar cells and push-pull chromophores for tunable-color organic light emitters. The emphasis is on electronic processes involving intra- and intermolecular energy or charge transfer driven by strong electron-phonon coupling inherent to pi-conjugated systems. Finally I will describe how precise manipulation and control of organic-organic interfaces in a photovoltaic device can increase its power conversion efficiency by 2-5 times in a model bilayer system. Applications of these design principles to practical architectures like bulk heterojunction devices lead to an enhancement in power conversion efficiency from 4.0% to 7.0%. These interface manipulation strategies are universally applicable to any donor-acceptor interface, making them both fundamentally interesting and technologically important for achieving high efficiency organic electronic devices.

Ion Motion Induced Emittance Growth of Matched Electron Beams in Plasma Wakefields

DOE Office of Scientific and Technical Information (OSTI.GOV)

An, Weiming; Lu, Wei; Huang, Chengkun

2017-06-14

Plasma-based acceleration is being considered as the basis for building a future linear collider. Nonlinear plasma wakefields have ideal properties for accelerating and focusing electron beams. Preservation of the emittance of nano-Coulomb beams with nanometer scale matched spot sizes in these wakefields remains a critical issue due to ion motion caused by their large space charge forces. We use fully resolved quasistatic particle-in-cell simulations of electron beams in hydrogen and lithium plasmas, including when the accelerated beam has different emittances in the two transverse planes. The projected emittance initially grows and rapidly saturates with a maximum emittance growth of lessmore » than 80% in hydrogen and 20% in lithium. The use of overfocused beams is found to dramatically reduce the emittance growth. In conclusion, the underlying physics that leads to the lower than expected emittance growth is elucidated.« less

Characterizing and Optimizing Photocathode Laser Distributions for Ultra-low Emittance Electron Beam Operations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, F.; Bohler, D.; Ding, Y.

2015-12-07

Photocathode RF gun has been widely used for generation of high-brightness electron beams for many different applications. We found that the drive laser distributions in such RF guns play important roles in minimizing the electron beam emittance. Characterizing the laser distributions with measurable parameters and optimizing beam emittance versus the laser distribution parameters in both spatial and temporal directions are highly desired for high-brightness electron beam operation. In this paper, we report systematic measurements and simulations of emittance dependence on the measurable parameters represented for spatial and temporal laser distributions at the photocathode RF gun systems of Linac Coherent Lightmore » Source. The tolerable parameter ranges for photocathode drive laser distributions in both directions are presented for ultra-low emittance beam operations.« less

Self aligning electron beam gun having enhanced thermal and mechanical stability

DOEpatents

Scarpetti, Jr., Raymond D.; Parkison, Clarence D.; Switzer, Vernon A.; Lee, Young J.; Sawyer, William C.

1995-01-01

A compact, high power electron gun having enhanced thermal and mechanical stability which incorporates a mechanically coupled, self aligning structure for the anode and cathode. The enhanced stability, and reduced need for realignment of the cathode to the anode and downstream optics during operation are achieved by use of a common support structure for the cathode and anode which requires no adjustment screws or spacers. The electron gun of the present invention also incorporates a modular design for the cathode, in which the electron emitter, its support structure, and the hardware required to attach the emitter assembly to the rest of the gun are a single element. This modular design makes replacement of the emitter simpler and requires no realignment after a new emitter has been installed. Compactness and a reduction in the possibility of high voltage breakdown are achieved by shielding the "triple point" where the electrode, insulator, and vacuum meet. The use of electric discharge machining (EDM) for fabricating the emitter allows for the accurate machining of the emitter into intricate shapes without encountering the normal stresses developed by standard emitter fabrication techniques.

Terahertz emission from ultrafast spin-charge current at a Rashba interface

NASA Astrophysics Data System (ADS)

Zhang, Qi; Jungfleisch, Matthias Benjamin; Zhang, Wei; Pearson, John E.; Wen, Haidan; Hoffmann, Axel

Ultrafast broadband terahertz (THz) radiation is highly desired in various fields from fundamental research in condensed matter physics to bio-chemical detection. Conventional ultrafast THz sources rely on either nonlinear optical effects or ultrafast charge currents in semiconductors. Recently, however, it was realized that ultrabroad-band THz radiation can be produced highly effectively by novel spintronics-based emitters that also make use of the electron's spin degree of freedom. Those THz-emitters convert a spin current flow into a terahertz electromagnetic pulse via the inverse spin-Hall effect. In contrast to this bulk conversion process, we demonstrate here that a femtosecond spin current pulse launched from a CoFeB layer can also generate terahertz transients efficiently at a two-dimensional Rashba interface between two non-magnetic materials, i.e., Ag/Bi. Those interfaces have been proven to be efficient means for spin- and charge current interconversion.

Double opposite-end tubesheet design for a thermovoltaic energy converter

DOEpatents

Ashcroft, John M.; Campbell, Brian C.; Depoy, David M.

2000-01-01

A method and apparatus for the direct conversion of energy by thermovoltaic energy conversion having first and second tubesheets, at least one photon emitter plate secured to and extending from the first tubesheet, at least one cold plate secured to and extending from the second tubesheet, a plurality of thermovoltaic cells disposed along oppositely disposed exterior surfaces of the cold plate, and means cooperating with the tubesheet for maintaining a vacuum between the photon emitter plate and the cold plate.

Spectral reflectance properties of electroplated and converted zinc for use as a solar selective coating

NASA Technical Reports Server (NTRS)

Mcdonald, G. E.; Curtis, H. B.; Gianelos, L.

1975-01-01

The spectral reflectance properties of electroplated and chemically converted zinc were measured for both chromate and chloride conversion coatings. The reflectance properties were measured for various times of conversion and for conversion at various chromate concentrations. The values of absorptance, alpha, integrated over the solar spectrum, and of infrared emittance, epsilon, integrated over black body radiation at 250 F were then calculated from the measured reflectance values. The interdependent variations of alpha and epsilon were plotted. The results indicate that the optimum combination of the highest absorptance in the solar spectrum and the lowest emittance in the infrared of the converted electroplated zinc is produced by chromate conversion at 1/2 concentration of the standard NEOSTAR chromate black solution for 0.50 minute or by chloride conversion for 0.50 minute.

Processing of materials for uniform field emission

DOEpatents

Pam, L.S.; Felter, T.E.; Talin, A.; Ohlberg, D.; Fox, C.; Han, S.

1999-01-12

This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/{micro}m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 {micro}m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material. 2 figs.

Processing of materials for uniform field emission

DOEpatents

Pam, Lawrence S.; Felter, Thomas E.; Talin, Alec; Ohlberg, Douglas; Fox, Ciaran; Han, Sung

1999-01-01

This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/.mu.m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 .mu.m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceeded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material.

Simulation of electron beam formation and transport in a gas-filled electron-optical system with a plasma emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishkov, A. A.; Kornilov, S. Yu., E-mail: kornilovsy@gmail.com; Rempe, N. G.

2016-07-15

The results of computer simulations of the electron-optical system of an electron gun with a plasma emitter are presented. The simulations are performed using the KOBRA3-INP, XOOPIC, and ANSYS codes. The results describe the electron beam formation and transport. The electron trajectories are analyzed. The mechanisms of gas influence on the energy inhomogeneity of the beam and its current in the regions of beam primary formation, acceleration, and transport are described. Recommendations for optimizing the electron-optical system with a plasma emitter are presented.

Boundary conditions on the plasma emitter surface in the presence of a particle counter flow: I. Ion emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Astrelin, V. T., E-mail: V.T.Astrelin@inp.nsk.su; Kotelnikov, I. A.

Emission of positively charged ions from a plasma emitter irradiated by a counterpropagating electron beam is studied theoretically. A bipolar diode with a plasma emitter in which the ion temperature is lower than the electron temperature and the counter electron flow is extracted from the ion collector is calculated in the one-dimensional model. An analog of Bohm’s criterion for ion emission in the presence of a counterpropagating electron beam is derived. The limiting density of the counterpropagating beam in a bipolar diode operating in the space-charge-limited-emission regime is calculated. The full set of boundary conditions on the plasma emitter surfacemore » that are required for operation of the high-current optics module in numerical codes used to simulate charged particle sources is formulated.« less

Measurement techniques for low emittance tuning and beam dynamics at CESR

NASA Astrophysics Data System (ADS)

Billing, M. G.; Dobbins, J. A.; Forster, M. J.; Kreinick, D. L.; Meller, R. E.; Peterson, D. P.; Ramirez, G. A.; Rendina, M. C.; Rider, N. T.; Sagan, D. C.; Shanks, J.; Sikora, J. P.; Stedinger, M. G.; Strohman, C. R.; Williams, H. A.; Palmer, M. A.; Holtzapple, R. L.; Flanagan, J.

2018-03-01

After operating as a High Energy Physics electron-positron collider, the Cornell Electron-positron Storage Ring (CESR) has been converted to become a dedicated synchrotron light source for the Cornell High Energy Synchrotron Source (CHESS). Over the course of several years CESR was adapted for accelerator physics research as a test accelerator, capable of studying topics relevant to future damping rings, colliders and light sources. Initially some specific topics were targeted for accelerator physic research with the storage ring in this mode, labeled CesrTA. These topics included 1) tuning techniques to produce low emittance beams, 2) the study of electron cloud (EC) development in a storage ring and 3) intra-beam scattering effects. The complete conversion of CESR to CesrTA occurred over a several year period, described elsewhere [1–3]. A number of specific instruments were developed for CesrTA. Much of the pre-existing instrumentation was modified to accommodate the scope of these studies and these are described in a companion paper [4]. To complete this research, a number of procedures were developed or modified, often requiring coordinated measurements among different instruments [5]. This paper provides an overview of types of measurements employed for the study of beam dynamics during the operation of CesrTA.

Insights on energy selective contacts for thermal energy harvesting using double resonant tunneling contacts and numerical modeling

NASA Astrophysics Data System (ADS)

Julian, A.; Jehl, Z.; Miyashita, N.; Okada, Y.; Guillemoles, J.-F.

2016-12-01

Energy selective electrical contacts have been proposed as a way to approach ultimate efficiencies both for thermoelectric and photovoltaic devices as they allow a reduction of the entropy production during the energy conversion process. A self-consistent numerical model based on the transfer matrix approach in the effective mass and envelope function approximation has been developed to calculate the electronic properties of double resonant tunneling barriers used as energy selective contacts in hot carrier solar cells. It is found that the application of an external electric bias significantly degrades the electronic transmission of the structure, and thus the tunneling current in the current-voltage characteristic. This is due to a symmetry breaking which can be offset using finely tuned asymmetric double resonant tunneling barriers, leading to a full recovery of the tunneling current in our model. Moreover, we model the heterostructure using electrons temperature in the emitter higher than that of the lattice, providing insights on the interpretation of experimental devices functioning in hot carrier conditions, especially regarding the previously reported shift of the resonance peak (negative differential resistance), which we interpret as related to a shift in the hot electron distribution while the maximum remains at the conduction band edge of the emitter. Finally, experimental results are presented using asymmetric structure showing significantly improved resonant properties at room temperature with very sharp negative differential resistance.

Thermionic gas switch

DOEpatents

Hatch, George L.; Brummond, William A.; Barrus, Donald M.

1986-01-01

A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

Self aligning electron beam gun having enhanced thermal and mechanical stability

DOEpatents

Scarpetti, R.D. Jr.; Parkison, C.D.; Switzer, V.A.; Lee, Y.J.; Sawyer, W.C.

1995-05-16

A compact, high power electron gun is disclosed having enhanced thermal and mechanical stability which incorporates a mechanically coupled, self aligning structure for the anode and cathode. The enhanced stability, and reduced need for realignment of the cathode to the anode and downstream optics during operation are achieved by use of a common support structure for the cathode and anode which requires no adjustment screws or spacers. The electron gun of the present invention also incorporates a modular design for the cathode, in which the electron emitter, its support structure, and the hardware required to attach the emitter assembly to the rest of the gun are a single element. This modular design makes replacement of the emitter simpler and requires no realignment after a new emitter has been installed. Compactness and a reduction in the possibility of high voltage breakdown are achieved by shielding the ``triple point`` where the electrode, insulator, and vacuum meet. The use of electric discharge machining (EDM) for fabricating the emitter allows for the accurate machining of the emitter into intricate shapes without encountering the normal stresses developed by standard emitter fabrication techniques. 12 Figs.

Diminiode thermionic conversion with 111-iridium electrodes

NASA Technical Reports Server (NTRS)

Koeger, E. W.; Bair, V. L.; Morris, J. F.

1976-01-01

Preliminary data indicating thermionic-conversion potentialities for a 111-iridium emitter and collector spaced 0.2 mm apart are presented. These results comprise output densities of current and of power as functions of voltage for three sets of emitter, collector, and reservoir temperatures: 1553, 944, 561 K; 1605, 898, 533 K; and 1656, 1028, 586 K. For the 1605 K evaluation, estimates produced work-function values of 2.22 eV for the emitter and 1.63 eV for the collector with a 2.0-eV barrier index (collector work function plus interelectrode voltage drop) corresponding to the maximum output of 5.5 W/sq cm at 0.24 volt. The current, voltage curve for the 1656 K 111-iridium diminiode yields a 6.2 W/sq cm maximum at 0.25 volt and is comparable with the 1700 K envelope for a diode with an etched-rhenium emitter and a 0.025-mm electrode gap made by TECO and evaluated by NASA.

Selective emitter solar cell formation by NH3 plasma nitridation and single diffusion

NASA Astrophysics Data System (ADS)

Wu, Yung-Hsien; Chen, Lun-Lun; Wu, Jia-Rong; Wu, Min-Lin

2010-01-01

A new and simple process for fabricating a selective emitter solar cell has been proposed. Lightly and heavily doped emitters could be concurrently formed after a single POCl3 diffusion step through the selective formation of SiNx, which serves as the diffusion barrier and can be grown by NH3 plasma nitridation of the Si surface. The desired phosphorus depth profile for the lightly and heavily doped region verifies the eligibility of this process. From the electrical characterization, the selective emitter solar cell fabricated by this process manifests a higher absolute conversion efficiency than a conventional one by 0.5%. It is the enhanced response to the short wavelength light and the reduced surface recombination that causes the considerable improvement in conversion efficiency which is beneficial to further hold the competitive advantage for solar cell manufacturers. Most importantly, the proposed process can be fully integrated into the conventional solar cell process in a mass-production laboratory.

Work function and surface stability of tungsten-based thermionic electron emission cathodes

NASA Astrophysics Data System (ADS)

Jacobs, Ryan; Morgan, Dane; Booske, John

2017-11-01

Materials that exhibit a low work function and therefore easily emit electrons into vacuum form the basis of electronic devices used in applications ranging from satellite communications to thermionic energy conversion. W-Ba-O is the canonical materials system that functions as the thermionic electron emitter commercially used in a range of high-power electron devices. However, the work functions, surface stability, and kinetic characteristics of a polycrystalline W emitter surface are still not well understood or characterized. In this study, we examined the work function and surface stability of the eight lowest index surfaces of the W-Ba-O system using density functional theory methods. We found that under the typical thermionic cathode operating conditions of high temperature and low oxygen partial pressure, the most stable surface adsorbates are Ba-O species with compositions in the range of Ba0.125O-Ba0.25O per surface W atom, with O passivating all dangling W bonds and Ba creating work function-lowering surface dipoles. Wulff construction analysis reveals that the presence of O and Ba significantly alters the surface energetics and changes the proportions of surface facets present under equilibrium conditions. Analysis of previously published data on W sintering kinetics suggests that fine W particles in the size range of 100-500 nm may be at or near equilibrium during cathode synthesis and thus may exhibit surface orientation fractions well described by the calculated Wulff construction.

Instantaneous electron beam emittance measurement system based on the optical transition radiation principle

NASA Astrophysics Data System (ADS)

Jiang, Xiao-Guo; Wang, Yuan; Zhang, Kai-Zhi; Yang, Guo-Jun; Shi, Jin-Shui; Deng, Jian-Jun; Li, Jin

2014-01-01

One kind of instantaneous electron beam emittance measurement system based on the optical transition radiation principle and double imaging optical method has been set up. It is mainly adopted in the test for the intense electron-beam produced by a linear induction accelerator. The system features two characteristics. The first one concerns the system synchronization signal triggered by the following edge of the main output waveform from a Blumlein switch. The synchronous precision of about 1 ns between the electron beam and the image capture time can be reached in this way so that the electron beam emittance at the desired time point can be obtained. The other advantage of the system is the ability to obtain the beam spot and beam divergence in one measurement so that the calculated result is the true beam emittance at that time, which can explain the electron beam condition. It provides to be a powerful beam diagnostic method for a 2.5 kA, 18.5 MeV, 90 ns (FWHM) electron beam pulse produced by Dragon I. The ability of the instantaneous measurement is about 3 ns and it can measure the beam emittance at any time point during one beam pulse. A series of beam emittances have been obtained for Dragon I. The typical beam spot is 9.0 mm (FWHM) in diameter and the corresponding beam divergence is about 10.5 mrad.

Thermophotovoltaic in-situ mirror cell

DOEpatents

Campbell, Brian C.

1997-01-01

A photovoltaic cell used in a direct energy conversion generator for converting heat to electricity includes a reflective layer disposed within the cell between the active layers of the cell and the cell substrate. The reflective layer reflects photons of low energy back to a photon producing emitter for reabsorption by the emitter, or reflects photons with energy greater than the cell bandgap back to the cell active layers for conversion into electricity. The reflective layer can comprise a reflective metal such as gold while the substrate can comprise heavily doped silicon or a metal.

Optimal thermionic energy conversion with established electrodes for high-temperature topping and process heating. [coal combustion product environments

NASA Technical Reports Server (NTRS)

Morris, J. F.

1980-01-01

Applied research-and-technology (ART) work reveals that optimal thermionic energy conversion (TEC) with approximately 1000 K to approximately 1100 K collectors is possible using well established tungsten electrodes. Such TEC with 1800 K emitters could approach 26.6% efficiency at 27.4 W/sq cm with approximately 1000 K collectors and 21.7% at 22.6 W/sq cm with approximately 1100 K collectors. These performances require 1.5 and 1.7 eV collector work functions (not the 1 eV ultimate) with nearly negligible interelectrode losses. Such collectors correspond to tungsten electrode systems in approximately 0.9 to approximately 6 torr cesium pressures with 1600 K to 1900 K emitters. Because higher heat-rejection temperatures for TEC allow greater collector work functions, interelectrode loss reduction becomes an increasingly important target for applications aimed at elevated temperatures. Studies of intragap modifications and new electrodes that will allow better electron emission and collection with lower cesium pressures are among the TEC-ART approaches to reduced interelectrode losses. These solutions will provide very effective TEC to serve directly in coal-combustion products for high-temperature topping and process heating. In turn this will help to use coal and to use it well.

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

NASA Astrophysics Data System (ADS)

Matthus, Christian D.; Huerner, Andreas; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

2018-06-01

In this study, the influence of the emitter efficiency on the forward current-voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.

Polarized positrons in Jefferson lab electron ion collider (JLEIC)

NASA Astrophysics Data System (ADS)

Lin, Fanglei; Grames, Joe; Guo, Jiquan; Morozov, Vasiliy; Zhang, Yuhong

2018-05-01

The Jefferson Lab Electron Ion Collider (JLEIC) is designed to provide collisions of electron and ion beams with high luminosity and high polarization to reach new frontier in exploration of nuclear structure. The luminosity, exceeding 1033 cm-2s-1 in a broad range of the center-of-mass (CM) energy and maximum luminosity above 1034 cm-2s-1, is achieved by high-rate collisions of short small-emittance low-charge bunches with proper cooling of the ion beam and synchrotron radiation damping of the electron beam. The polarization of light ion species (p, d, 3He) and electron can be easily preserved, manipulated and maintained by taking advantage of the unique figure-8 shape rings. With a growing physics interest, polarized positron-ion collisions are considered to be carried out in the JLEIC to offer an additional probe to study the substructure of nucleons and nuclei. However, the creation of polarized positrons with sufficient intensity is particularly challenging. We propose a dedicated scheme to generate polarized positrons. Rather than trying to accumulate "hot" positrons after conversion, we will accumulate "cold" electrons before conversion. Charge accumulation additionally provides a novel means to convert high repetition rate (>100 MHz) electron beam from the gun to a low repetition rate (<100 MHz) positron beam for broad applications. In this paper, we will address the scheme, provide preliminary estimated parameters and explain the key areas to reach the desired goal.

Light modulated electron beam driven radiofrequency emitter

DOEpatents

Wilson, M.T.; Tallerico, P.J.

1979-10-10

The disclosure relates to a light modulated electron beam-driven radiofrequency emitter. Pulses of light impinge on a photoemissive device which generates an electron beam having the pulse characteristics of the light. The electron beam is accelerated through a radiofrequency resonator which produces radiofrequency emission in accordance with the electron, hence, the light pulses.

Measured emittance dependence on injection method in laser plasma accelerators

NASA Astrophysics Data System (ADS)

Barber, Samuel; van Tilborg, Jeroen; Schroeder, Carl; Lehe, Remi; Tsai, Hai-En; Swanson, Kelly; Steinke, Sven; Nakamura, Kei; Geddes, Cameron; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

2017-10-01

The success of many laser plasma accelerator (LPA) based applications relies on the ability to produce electron beams with excellent 6D brightness, where brightness is defined as the ratio of charge to the product of the three normalized emittances. As such, parametric studies of the emittance of LPA generated electron beams are essential. Profiting from a stable and tunable LPA setup, combined with a carefully designed single-shot transverse emittance diagnostic, we present a direct comparison of charge dependent emittance measurements of electron beams generated by two different injection mechanisms: ionization injection and shock induced density down-ramp injection. Notably, the measurements reveal that ionization injection results in significantly higher emittance. With the down-ramp injection configuration, emittances less than 1 micron at spectral charge densities up to 2 pC/MeV were measured. This work was supported by the U.S. DOE under Contract No. DE-AC02-05CH11231, by the NSF under Grant No. PHY-1415596, by the U.S. DOE NNSA, DNN R&D (NA22), and by the Gordon and Betty Moore Foundation under Grant ID GBMF4898.

Velocity-Map Imaging for Emittance Characterization of Multiphoton Electron Emission from a Gold Surface

NASA Astrophysics Data System (ADS)

Ye, Hong; Trippel, Sebastian; Di Fraia, Michele; Fallahi, Arya; Mücke, Oliver D.; Kärtner, Franz X.; Küpper, Jochen

2018-04-01

A velocity-map-imaging spectrometer is demonstrated to characterize the normalized emittance (root-mean-square, rms) of photoemitted electron bunches. Both the two-dimensional spatial distribution and the projected velocity distribution images of photoemitted electrons are recorded by the detection system and analyzed to obtain the normalized emittance (rms). With the presented distribution function of the electron photoemission angles, a mathematical method is implemented to reconstruct the three-dimensional velocity distribution. As a first example, multiphoton emission from a planar Au surface is studied via irradiation at a glancing angle by intense 45-fs laser pulses at a central wavelength of 800 nm. The reconstructed energy distribution agrees very well with the Berglund-Spicer theory of photoemission. The normalized emittance (rms) of the intrinsic electron bunch is characterized to be 128 and 14 nm rad in the X and Y directions, respectively. The demonstrated imaging spectrometer has the ability to characterize the normalized emittance (rms) in a few minutes with a fine energy resolution of 0.2 meV in the image center and will, thereby, foster the further development of x-ray free-electron-laser injectors and ultrafast electron diffraction, and it opens up opportunities for studying correlated electron emission from surfaces and vacuum nanoelectronic devices.

Ultra low emittance electron beams from multi-alkali antimonide photocathode operated with infrared light

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cultrera, L.; Gulliford, C.; Bartnik, A.

2016-03-28

The intrinsic emittance of electron beams generated from a multi-alkali photocathode operated in a high voltage DC gun is reported. The photocathode showed sensitivity extending to the infrared part of the spectrum up to 830 nm. The measured intrinsic emittances of electron beams generated with light having wavelength longer than 800 nm are approaching the limit imposed by the thermal energy of electrons at room temperature with quantum efficiencies comparable to metallic photocathodes used in operation of modern photoinjectors.

High-Performance Field Emission from a Carbonized Cork.

PubMed

Lee, Jeong Seok; Lee, Hak Jun; Yoo, Jae Man; Kim, Taewoo; Kim, Yong Hyup

2017-12-20

To broaden the range of application of electron beams, low-power field emitters are needed that are miniature and light. Here, we introduce carbonized cork as a material for field emitters. The light natural cork becomes a graphitic honeycomb upon carbonization, with the honeycomb cell walls 100-200 nm thick and the aspect ratio larger than 100, providing an ideal structure for the field electron emission. Compared to nanocarbon field emitters, the cork emitter produces a high current density and long-term stability with a low turn-on field. The nature of the cork material makes it quite simple to fabricate the emitter. Furthermore, any desired shape of the emitter tailored for the final application can easily be prepared for point, line, or planar emission.

Development of a pepper-pot device to determine the emittance of an ion beam generated by electron cyclotron resonance ion sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strohmeier, M.; University of Applied Sciences Karlsruhe, Moltkestr. 30, 76133 Karlsruhe; Benitez, J. Y.

2010-02-15

This paper describes the recent development and commissioning of a pepper-pot emittance meter at the Lawrence Berkeley National Laboratory (LBNL). It is based on a potassium bromide (KBr) scintillator screen in combination with a charged coupled device camera. Pepper-pot scanners record the full four-dimensional transverse phase space emittances which are particularly interesting for electron cyclotron resonance ion sources. The strengths and limitations of evaluating emittances using optical pepper-pot scanners are described and systematic errors induced by the optical data acquisition system will be presented. Light yield tests of KBr exposed to different ion species and first emittance measurement data usingmore » ion beams extracted from the 6.4 GHz LBNL electron cyclotron resonance ion source are presented and discussed.« less

Solid state transport-based thermoelectric converter

DOEpatents

Hu, Zhiyu

2010-04-13

A solid state thermoelectric converter includes a thermally insulating separator layer, a semiconducting collector and an electron emitter. The electron emitter comprises a metal nanoparticle layer or plurality of metal nanocatalyst particles disposed on one side of said separator layer. A first electrically conductive lead is electrically coupled to the electron emitter. The collector layer is disposed on the other side of the separator layer, wherein the thickness of the separator layer is less than 1 .mu.m. A second conductive lead is electrically coupled to the collector layer.

Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers.

PubMed

Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

2014-02-14

Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10,000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm(-2). The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers

NASA Astrophysics Data System (ADS)

Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

2014-02-01

Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10 000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm-2. The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1994-01-01

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, J.M.; Kurtz, S.R.

1994-05-31

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

Organic nanostructures of thermally activated delayed fluorescent emitters with enhanced intersystem crossing as novel metal-free photosensitizers.

PubMed

Zhang, Jinfeng; Chen, Wencheng; Chen, Rui; Liu, Xiao-Ke; Xiong, Yuan; Kershaw, Stephen V; Rogach, Andrey L; Adachi, Chihaya; Zhang, Xiaohong; Lee, Chun-Sing

2016-09-27

We applied organic nanostructures based on thermally activated delayed fluorescent (TADF) emitters for singlet oxygen generation. Due to the extremely small energy gaps between the excited singlet states (S 1 ) and triplet states (T 1 ) of these heavy-metal-free organic nanostructures, intersystem conversion between S 1 and T 1 can occur easily. This strategy also works well for exciplex-type TADF emitters prepared by mixing suitable donors and acceptors which have no TADF characteristics themselves.

Light modulated switches and radio frequency emitters

DOEpatents

Wilson, Mahlon T.; Tallerico, Paul J.

1982-01-01

The disclosure relates to a light modulated electron beam driven radiofrequency emitter. Pulses of light impinge on a photoemissive device which generates an electron beam having the pulse characteristics of the light. The electron beam is accelerated through a radiofrequency resonator which produces radiofrequency emission in accordance with the electron, hence, the light pulses.

Near atomically smooth alkali antimonide photocathode thin films

DOE PAGES

Feng, Jun; Karkare, Siddharth; Nasiatka, James; ...

2017-01-24

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Near atomically smooth alkali antimonide photocathode thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jun; Karkare, Siddharth; Nasiatka, James

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Microelectrode for energy and current control of nanotip field electron emitters

NASA Astrophysics Data System (ADS)

Lüneburg, S.; Müller, M.; Paarmann, A.; Ernstorfer, R.

2013-11-01

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10-30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

Multi-field electron emission pattern of 2D emitter: Illustrated with graphene

NASA Astrophysics Data System (ADS)

Luo, Ma; Li, Zhibing

2016-11-01

The mechanism of laser-assisted multi-field electron emission of two-dimensional emitters is investigated theoretically. The process is basically a cold field electron emission but having more controllable components: a uniform electric field controls the emission potential barrier, a magnetic field controls the quantum states of the emitter, while an optical field controls electron populations of specified quantum states. It provides a highly orientational vacuum electron line source whose divergence angle over the beam plane is inversely proportional to square root of the emitter height. Calculations are carried out for graphene with the armchair emission edge, as a concrete example. The rate equation incorporating the optical excitation, phonon scattering, and thermal relaxation is solved in the quasi-equilibrium approximation for electron population in the bands. The far-field emission patterns, that inherit the features of the Landau bands, are obtained. It is found that the optical field generates a characteristic structure at one wing of the emission pattern.

Resonant tunneling device with two-dimensional quantum well emitter and base layers

DOEpatents

Simmons, J.A.; Sherwin, M.E.; Drummond, T.J.; Weckwerth, M.V.

1998-10-20

A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation. 43 figs.

Resonant tunneling device with two-dimensional quantum well emitter and base layers

DOEpatents

Simmons, Jerry A.; Sherwin, Marc E.; Drummond, Timothy J.; Weckwerth, Mark V.

1998-01-01

A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.

Thermionic converter

DOEpatents

Fitzpatrick, G.O.

1987-05-19

A thermionic converter is set forth which includes an envelope having an electron collector structure attached adjacent to a wall. An electron emitter structure is positioned adjacent the collector structure and spaced apart from opposite wall. The emitter and collector structures are in a common chamber. The emitter structure is heated substantially only by thermal radiation. Very small interelectrode gaps can be maintained utilizing the thermionic converter whereby increased efficiency results. 10 figs.

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source.

PubMed

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-06-28

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication.

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source

PubMed Central

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-01-01

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication. PMID:27350159

Cancellation of coherent synchrotron radiation kicks with optics balance.

PubMed

Di Mitri, S; Cornacchia, M; Spampinati, S

2013-01-04

Minimizing transverse emittance is essential in linear accelerators designed to deliver very high brightness electron beams. Emission of coherent synchrotron radiation (CSR), as a contributing factor to emittance degradation, is an important phenomenon to this respect. A manner in which to cancel this perturbation by imposing certain symmetric conditions on the electron transport system has been suggested.We first expand on this idea by quantitatively relating the beam Courant-Snyder parameters to the emittance growth and by providing a general scheme of CSR suppression with asymmetric optics, provided it is properly balanced along the line. We present the first experimental evidence of this cancellation with the resultant optics balance of multiple CSR kicks: the transverse emittance of a 500 pC, sub-picosecond, high brightness electron beam is being preserved after the passage through the achromatic transfer line of the FERMI@Elettra free electron laser, and emittance growth is observed when the optics balance is intentionally broken. We finally show the agreement between the theoretical model and the experimental results. This study holds the promise of compact dispersive lines with relatively large bending angles, thus reducing costs for future electron facilities.

High power beta electron device - Beyond betavoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayers, William M.; Gentile, Charles A.

Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100 KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. This approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cellsmore » convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. Furthermore, the power source can use a variety of beta radioisotopes and scales by stacking the devices.« less

High power beta electron device - Beyond betavoltaics

DOE PAGES

Ayers, William M.; Gentile, Charles A.

2017-11-10

Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100 KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. This approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cellsmore » convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. Furthermore, the power source can use a variety of beta radioisotopes and scales by stacking the devices.« less

High power beta electron device - Beyond betavoltaics.

PubMed

Ayers, William M; Gentile, Charles A

2018-01-01

Developing watt level power sources with beta emitting radioisotopes has been limited by the inability to utilize high energy (> 100KeV) beta emitters at high radioisotope loadings without damaging the energy conversion materials. A new type of beta electron power source is described that removes those restrictions. The approach contains the radioisotope in a beta transparent titanium tube and confines beta electrons emitted through the tube wall to spiral trajectories around the tube with an axial magnetic field. The confined beta electrons dissipate energy though multiple interactions with surrounding excimer precursor gas atoms to efficiently generate photons. Photovoltaic cells convert the photons to electrical power. Since the beta electrons dissipate energy in the excimer precursor gas, the device can be loaded with more than 10 13 Bq of radioisotope to generate 100 milliwatt to watt levels of electrical power without damaging the device materials or degrading its performance. The power source can use a variety of beta radioisotopes and scales by stacking the devices. Copyright © 2017. Published by Elsevier Ltd.

Long-lived and highly efficient green and blue phosphorescent emitters and device architectures for OLED displays

NASA Astrophysics Data System (ADS)

Eickhoff, Christian; Murer, Peter; Geßner, Thomas; Birnstock, Jan; Kröger, Michael; Choi, Zungsun; Watanabe, Soichi; May, Falk; Lennartz, Christian; Stengel, Ilona; Münster, Ingo; Kahle, Klaus; Wagenblast, Gerhard; Mangold, Hannah

2015-09-01

In this paper, two OLED device concepts are introduced. First, classical phosphorescent green carbene emitters with unsurpassed lifetime, combined with low voltage and high efficiency are presented and the associated optimized OLED stacks are explained. Second, a path towards highly efficient, long-lived deep blue systems is shown. The high efficiencies can be reached by having the charge-recombination on the phosphorescent carbene emitter while at the same time short emissive lifetimes are realized by fast energy transfer to the fluorescent emitter, which eventually allows for higher OLED stability in the deep blue. Device architectures, materials and performance data are presented showing that carbene type emitters have the potential to outperform established phosphorescent green emitters both in terms of lifetime and efficiency. The specific class of green emitters under investigation shows distinctly larger electron affinities (2.1 to 2.5 eV) and ionization potentials (5.6 to 5.8 eV) as compared to the "standard" emitter Ir(ppy)3 (5.0/1.6 eV). This difference in energy levels requires an adopted OLED design, in particular with respect to emitter hosts and blocking layers. Consequently, in the diode setup presented here, the emitter species is electron transporting or electron trapping. For said green carbene emitters, the typical peak wavelength is 525 nm yielding CIE color coordinates of (x = 0.33, y = 0.62). Device data of green OLEDs are shown with EQEs of 26 %. Driving voltage at 1000 cd/m2 is below 3 V. In an optimized stack, a device lifetime of LT95 > 15,000 h (1000 cd/m2) has been reached, thus fulfilling AMOLED display requirements.

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays.

PubMed

Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

2016-11-07

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1-5 THz frequency range with the power levels as high as 300  μ W. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths.

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

PubMed Central

Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

2016-01-01

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1–5 THz frequency range with the power levels as high as 300 μW. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths. PMID:27916999

Emitter location errors in electronic recognition system

NASA Astrophysics Data System (ADS)

Matuszewski, Jan; Dikta, Anna

2017-04-01

The paper describes some of the problems associated with emitter location calculations. This aspect is the most important part of the series of tasks in the electronic recognition systems. The basic tasks include: detection of emission of electromagnetic signals, tracking (determining the direction of emitter sources), signal analysis in order to classify different emitter types and the identification of the sources of emission of the same type. The paper presents a brief description of the main methods of emitter localization and the basic mathematical formulae for calculating their location. The errors' estimation has been made to determine the emitter location for three different methods and different scenarios of emitters and direction finding (DF) sensors deployment in the electromagnetic environment. The emitter has been established using a special computer program. On the basis of extensive numerical calculations, the evaluation of precise emitter location in the recognition systems for different configuration alignment of bearing devices and emitter was conducted. The calculations which have been made based on the simulated data for different methods of location are presented in the figures and respective tables. The obtained results demonstrate that calculation of the precise emitter location depends on: the number of DF sensors, the distances between emitter and DF sensors, their mutual location in the reconnaissance area and bearing errors. The precise emitter location varies depending on the number of obtained bearings. The higher the number of bearings, the better the accuracy of calculated emitter location in spite of relatively high bearing errors for each DF sensor.

Emission current formation in plasma electron emitters

NASA Astrophysics Data System (ADS)

Gruzdev, V. A.; Zalesski, V. G.

2010-12-01

A model of the plasma electron emitter is considered, in which the current redistribution over electrodes of the emitter gas-discharge structure and weak electric field formation in plasma are taken into account as functions of the emission current. The calculated and experimental dependences of the switching parameters, extraction efficiency, and strength of the electric field in plasma on the accelerating voltage and geometrical sizes of the emission channel are presented.

Microelectrode for energy and current control of nanotip field electron emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lüneburg, S.; Müller, M., E-mail: m.mueller@fhi-berlin.mpg.de; Paarmann, A., E-mail: alexander.paarmann@fhi-berlin.mpg.de

2013-11-18

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10–30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

Electrically excited hot-electron dominated fluorescent emitters using individual Ga-doped ZnO microwires via metal quasiparticle film decoration.

PubMed

Liu, Yang; Jiang, Mingming; Zhang, Zhenzhong; Li, Binghui; Zhao, Haifeng; Shan, Chongxin; Shen, Dezhen

2018-03-28

The generation of hot electrons from metal nanostructures through plasmon decay provided a direct interfacial charge transfer mechanism, which no longer suffers from the barrier height restrictions observed for metal/semiconductor interfaces. Metal plasmon-mediated energy conversion with higher efficiency has been proposed as a promising alternative to construct novel optoelectronic devices, such as photodetectors, photovoltaic and photocatalytic devices, etc. However, the realization of the electrically-driven generation of hot electrons, and the application in light-emitting devices remain big challenges. Here, hybrid architectures comprising individual Ga-doped ZnO (ZnO:Ga) microwires via metal quasiparticle film decoration were fabricated. The hottest spots could be formed towards the center of the wires, and the quasiparticle films were converted into physically isolated nanoparticles by applying a bias onto the wires. Thus, the hot electrons became spatially localized towards the hottest regions, leading to a release of energy in the form of emitting photons. By adjusting the sputtering times and appropriate alloys, such as Au and Ag, wavelength-tunable emissions could be achieved. To exploit the EL emission characteristics, metal plasmons could be used as active elements to mediate the generation of hot electrons from metal nanostructures, which are located in the light-emitting regions, followed by injection into ZnO:Ga microwire-channels; thus, the production of plasmon decay-induced hot-electrons could function as an efficient approach to dominate emission wavelengths. Therefore, by introducing metal nanostructure decoration, individual ZnO:Ga microwires can be used to construct wavelength-tunable fluorescent emitters. The hybrid architectures of metal-ZnO micro/nanostructures offer a fantastic candidate to broaden the potential applications of semiconducting optoelectronic devices, such as photovoltaic devices, photodetectors, optoelectronic sensors, etc.

Current-horn suppression for reduced coherent-synchrotron-radiation-induced emittance growth in strong bunch compression

NASA Astrophysics Data System (ADS)

Charles, T. K.; Paganin, D. M.; Latina, A.; Boland, M. J.; Dowd, R. T.

2017-03-01

Control of coherent synchrotron radiation (CSR)-induced emittance growth is essential in linear accelerators designed to deliver very high brightness electron beams. Extreme current values at the head and tail of the electron bunch, resulting from strong bunch compression, are responsible for large CSR production leading to significant transverse projected emittance growth. The Linac Coherent Light Source (LCLS) truncates the head and tail current spikes which greatly improves free electron laser (FEL) performance. Here we consider the underlying dynamics that lead to formation of current spikes (also referred to as current horns), which has been identified as caustics forming in electron trajectories. We present a method to analytically determine conditions required to avoid the caustic formation and therefore prevent the current spikes from forming. These required conditions can be easily met, without increasing the transverse slice emittance, through inclusion of an octupole magnet in the middle of a bunch compressor.

Shielding in ungated field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, J. R.; Jensen, K. L.; Shiffler, D. A.

Cathodes consisting of arrays of high aspect ratio field emitters are of great interest as sources of electron beams for vacuum electronic devices. The desire for high currents and current densities drives the cathode designer towards a denser array, but for ungated emitters, denser arrays also lead to increased shielding, in which the field enhancement factor β of each emitter is reduced due to the presence of the other emitters in the array. To facilitate the study of these arrays, we have developed a method for modeling high aspect ratio emitters using tapered dipole line charges. This method can bemore » used to investigate proximity effects from similar emitters an arbitrary distance away and is much less computationally demanding than competing simulation approaches. Here, we introduce this method and use it to study shielding as a function of array geometry. Emitters with aspect ratios of 10{sup 2}–10{sup 4} are modeled, and the shielding-induced reduction in β is considered as a function of tip-to-tip spacing for emitter pairs and for large arrays with triangular and square unit cells. Shielding is found to be negligible when the emitter spacing is greater than the emitter height for the two-emitter array, or about 2.5 times the emitter height in the large arrays, in agreement with previously published results. Because the onset of shielding occurs at virtually the same emitter spacing in the square and triangular arrays, the triangular array is preferred for its higher emitter density at a given emitter spacing. The primary contribution to shielding in large arrays is found to come from emitters within a distance of three times the unit cell spacing for both square and triangular arrays.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halavanau, A.; Hyun, J.; Mihalcea, D.

A photocathode, immersed in solenoidal magnetic field, can produce canonical-angular-momentum (CAM) dominated or “magnetized” electron beams. Such beams have an application in electron cooling of hadron beams and can also be uncoupled to yield asymmetric-emittance (“flat”) beams. In the present paper we explore the possibilities of the flat beam generation at Fermilab’s Accelerator Science and Technology (FAST) facility. We present optimization of the beam flatness and four-dimensional transverse emittance and investigate the mapping and its limitations of the produced eigen-emittances to conventional emittances using a skew-quadrupole channel. Possible application of flat beams at the FAST facility are also discussed.

Gate-controlled electromechanical backaction induced by a quantum dot

NASA Astrophysics Data System (ADS)

Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

2016-04-01

Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

Low Emittance, High Brilliance Relativistic Electron Beams from a Laser-Plasma Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brunetti, E.; Shanks, R. P.; Manahan, G. G.

2010-11-19

Progress in laser wakefield accelerators indicates their suitability as a driver of compact free-electron lasers (FELs). High brightness is defined by the normalized transverse emittance, which should be less than 1{pi} mm mrad for an x-ray FEL. We report high-resolution measurements of the emittance of 125 MeV, monoenergetic beams from a wakefield accelerator. An emittance as low as 1.1{+-}0.1{pi} mm mrad is measured using a pepper-pot mask. This sets an upper limit on the emittance, which is comparable with conventional linear accelerators. A peak transverse brightness of 5x10{sup 15} A m{sup -1} rad{sup -1} makes it suitable for compact XUVmore » FELs.« less

Undulator-Based Laser Wakefield Accelerator Electron Beam Energy Spread and Emittance Diagnostic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M. S.; University of Nevada Reno, Reno, NV 89557; Van Tilborg, J.

The design and current status of experiments to couple the Tapered Hybrid Undulator (THUNDER) to the Lawrence Berkeley National Laboratory (LBNL) laser plasma accelerator (LPA) to measure electron beam energy spread and emittance are presented.

Operational experience with nanocoulomb bunch charges in the Cornell photoinjector

DOE PAGES

Bartnik, Adam; Gulliford, Colwyn; Bazarov, Ivan; ...

2015-08-19

Characterization of 9–9.5 MeV electron beams produced in the dc-gun based Cornell photoinjector is given for bunch charges ranging from 20 pC to 2 nC. Comparison of the measured emittances and longitudinal current profiles to optimized 3D space charge simulations yields excellent agreement for bunch charges up to 1 nC when the measured laser distribution is used to generate initial particle distributions in simulation. Analysis of the scaling of the measured emittance with bunch charge shows that the emittance scales roughly as the square root of the bunch charge up to 300 pC, above which the trend becomes linear. Furthermore,more » these measurements demonstrate that the Cornell photoinjector can produce cathode emittance dominated beams meeting the emittance and peak current specifications for next generation free electron lasers operating at high repetition rate. In addition, the 1 and 2 nC results are relevant to the electron ion collider community.« less

Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band

PubMed Central

Chen, Geng; Zou, Yang; Zhang, Wen-Hao; Zhang, Zi-Huai; Zhou, Zong-Quan; He, De-Yong; Tang, Jian-Shun; Liu, Bi-Heng; Yu, Ying; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2016-01-01

Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution. Here, we demonstrate in principle that IEPPs in the telecom band can be created by combining a single QD-NW and a nonlinear crystal waveguide. The QD-NW system serves as the single photon source, and the emitted visible single photons are split into IEPPs at approximately 1.55 μm through the process of spontaneous parametric down conversion (SPDC) in a periodically poled lithium niobate (PPLN) waveguide. The compatibility of the QD-PPLN interface is the determinant factor in constructing this novel hybrid-quantum-emitter (HQE). Benefiting from the desirable optical properties of QD-NWs and the extremely high nonlinear conversion efficiency of PPLN waveguides, we successfully generate IEPPs in the telecom band with the polarization degree of freedom. The entanglement of the generated photon pairs is confirmed by the entanglement witness. Our experiment paves the way to producing HQEs inheriting the advantages of multiple systems. PMID:27225881

Experimental Demonstration of a Hybrid-Quantum-Emitter Producing Individual Entangled Photon Pairs in the Telecom Band.

PubMed

Chen, Geng; Zou, Yang; Zhang, Wen-Hao; Zhang, Zi-Huai; Zhou, Zong-Quan; He, De-Yong; Tang, Jian-Shun; Liu, Bi-Heng; Yu, Ying; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Han, Yong-Jian; Li, Chuan-Feng; Guo, Guang-Can

2016-05-26

Quantum emitters generating individual entangled photon pairs (IEPP) have significant fundamental advantages over schemes that suffer from multiple photon emission, or schemes that require post-selection techniques or the use of photon-number discriminating detectors. Quantum dots embedded within nanowires (QD-NWs) represent one of the most promising candidate for quantum emitters that provide a high collection efficiency of photons. However, a quantum emitter that generates IEPP in the telecom band is still an issue demanding a prompt solution. Here, we demonstrate in principle that IEPPs in the telecom band can be created by combining a single QD-NW and a nonlinear crystal waveguide. The QD-NW system serves as the single photon source, and the emitted visible single photons are split into IEPPs at approximately 1.55 μm through the process of spontaneous parametric down conversion (SPDC) in a periodically poled lithium niobate (PPLN) waveguide. The compatibility of the QD-PPLN interface is the determinant factor in constructing this novel hybrid-quantum-emitter (HQE). Benefiting from the desirable optical properties of QD-NWs and the extremely high nonlinear conversion efficiency of PPLN waveguides, we successfully generate IEPPs in the telecom band with the polarization degree of freedom. The entanglement of the generated photon pairs is confirmed by the entanglement witness. Our experiment paves the way to producing HQEs inheriting the advantages of multiple systems.

Field emission chemical sensor

DOEpatents

Panitz, J.A.

1983-11-22

A field emission chemical sensor for specific detection of a chemical entity in a sample includes a closed chamber enclosing two field emission electrode sets, each field emission electrode set comprising (a) an electron emitter electrode from which field emission electrons can be emitted when an effective voltage is connected to the electrode set; and (b) a collector electrode which will capture said electrons emitted from said emitter electrode. One of the electrode sets is passive to the chemical entity and the other is active thereto and has an active emitter electrode which will bind the chemical entity when contacted therewith.

Development of reverse biased p-n junction electron emission

NASA Technical Reports Server (NTRS)

Fowler, P.; Muly, E. C.

1971-01-01

A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.

Ion source with corner cathode

NASA Technical Reports Server (NTRS)

Herrero, Federico A. (Inventor); Roman, Patrick A. (Inventor)

2012-01-01

An ion source may include first, second, and third electrodes. The first electrode may be a repeller having a V-shaped groove. The second electrode may be an electron emitter filament disposed adjacent the base of the V-shaped groove. The third electrode may be an anode that defines an enclosed volume with an aperture formed therein adjacent the electron emitter filament. A potential of the first electrode may be less than a potential of the second electrode, and the potential of the second electrode may be less than a potential of the third electrode. A fourth electrode that is disposed between the electron emitter filament and the anode may be used to produce a more collimated electron beam.

The Next Generation Photoinjector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, Dennis Thomas; /Stanford U., Appl. Phys. Dept.

2005-09-12

This dissertation will elucidate the design, construction, theory, and operation of the Next Generation Photoinjector (NGP). This photoinjector is comprised of the BNL/SLAC/UCLA 1.6 cell symmetrized S-band photocathode radio frequency (rf) electron gun and a single emittance-compensation solenoidal magnet. This photoinjector is a prototype for the Linear Coherent Light Source X-ray Free Electron Laser operating in the 1.5 {angstrom} range. Simulations indicate that this photoinjector is capable of producing a 1nC electron bunch with transverse normalized emittance less than 1 {pi} mm mrad were the cathode is illuminated with a 10 psec longitudinal flat top pulse. Using a Gaussian longitudinalmore » laser profile with a full width half maximum (FWHM) of 10 psec, simulation indicates that the NGP is capable of producing a normalized rms emittance of 2.50 {pi} mm mrad at 1 nC. Using the removable cathode plate we have studied the quantum efficiency (QE) of both copper and magnesium photo-cathodes. The Cu QE was found to be 4.5 x 10{sup -5} with a 25% variation in the QE across the emitting surface of the cathode, while supporting a field gradient of 125 MV/m. At low charge, the transverse normalized rms emittance, {epsilon}{sub n,rms}, produced by the NGP is {epsilon}{sub n,rms} = 1.2 {pi} mm mrad for Q{sub T} = 0.3 nC. The 95% electron beam bunch length was measured to 10.9 psec. The emittance due to the finite magnetic field at the cathode has been studied. The scaling of this magnetic emittance term as a function of cathode magnetic field was found to be 0.01 {pi} mm mrad per Gauss. The 1.6 cell rf gun has been designed to reduce the dipole field asymmetry of the longitudinal accelerating field. Low level rf measurements show that this has in fact been accomplished, with an order of magnitude decrease in the dipole field. High power beam studies also show that the dipole field has been decreased. An upper limit of the intrinsic non-reducible thermal emittance of a photocathode under high field gradient was found to be {epsilon}{sub n,rms} = 0.8 {pi} mm mrad. Agreement is found between the theoretical calculation of the thermal emittance, {epsilon}{sub 0} = 0.62 {pi} mm mrad, and the experimental results, after taking into account all of the emittance contribution terms. The 1 nC emittance was found to be {epsilon}{sub n,rms} = 4.75 {pi} mm mrad with a 95% electron beam bunch length of 14.7 psec. Systematic bunch length measurements showed electron beam bunch lengthening due the electron beam charge. They will show that the discrepancy between measurement and simulation is due to three effects. The major effect is due to the variation of the QE in the photo-emitting area of the Cu cathode. Also, space charge emittance blowup in the transport line will be shown to be a significant effect because the electron beam is still in the space charge dominated regime. The last effect, which has been observed experimentally, is the electron bunch lengthening as a function of total electron bunch charge.« less

Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission

NASA Technical Reports Server (NTRS)

Dimitrijevic, Steven (Inventor); Withers, James C. (Inventor); Loutfy, Raouf O. (Inventor)

2005-01-01

The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Thermionic converter

DOEpatents

Fitzpatrick, Gary O.

1987-05-19

A thermionic converter (10) is set forth which includes an envelope (12) having an electron collector structure (22) attached adjacent to a wall (16). An electron emitter structure (24) is positioned adjacent the collector structure (22) and spaced apart from opposite wall (14). The emitter (24) and collector (22) structures are in a common chamber (20). The emitter structure (24) is heated substantially only by thermal radiation. Very small interelectrode gaps (28) can be maintained utilizing the thermionic converter (10) whereby increased efficiency results.

Single-shot measurements of low emittance beams from laser-plasma accelerators comparing two triggered injection methods

NASA Astrophysics Data System (ADS)

van Tilborg, Jeroen

2017-10-01

The success of laser plasma accelerator (LPA) based applications, such as a compact x-ray free electron laser (FEL), relies on the ability to produce electron beams with excellent 6D brightness, where brightness is defined as the ratio of charge to the product of the three normalized emittances. As such, parametric studies of the emittance of LPA generated electron beams are essential. Profiting from a stable and tunable LPA setup, combined with a carefully designed single-shot energy-dispersed emittance diagnostic, we present a direct comparison of charge dependent emittance measurements of electron beams generated by two different injection mechanisms: ionization injection and shock-induced density down-ramp injection. Both injection mechanisms have gained in popularity in recent years due to their demonstrated stable LPA performance. For the down-ramp injection configuration, normalized emittances a factor of two lower were recorded: less than 1 micron at spectral charge densities up to 2 pC/MeV. For both injection mechanisms, a contributing correlation of space charge to the emittance was identified. This measurement technique in general, and these results specifically, are critical to the evaluation of LPA injection methods and development of high-quality LPA beam lines worldwide. This work is supported by the U.S. DOE under Contract No. DE-AC02-05CH11231, by the U.S. DOE NNSA, DNN R&D (NA22), by the National Science Foundation under Grant No. PHY-1415596, and by the Gordon and Betty Moore Foundation under Grant ID GBMF4898.

Exact cancellation of emittance growth due to coupled transverse dynamics in solenoids and rf couplers

NASA Astrophysics Data System (ADS)

Dowell, David H.; Zhou, Feng; Schmerge, John

2018-01-01

Weak, rotated magnetic and radio frequency quadrupole fields in electron guns and injectors can couple the beam's horizontal with vertical motion, introduce correlations between otherwise orthogonal transverse momenta, and reduce the beam brightness. This paper discusses two important sources of coupled transverse dynamics common to most electron injectors. The first is quadrupole focusing followed by beam rotation in a solenoid, and the second coupling comes from a skewed high-power rf coupler or cavity port which has a rotated rf quadrupole field. It is shown that a dc quadrupole field can correct for both types of couplings and exactly cancel their emittance growths. The degree of cancellation of the rf skew quadrupole emittance is limited by the electron bunch length. Analytic expressions are derived and compared with emittance simulations and measurements.

Thermal emittance from ionization-induced trapping in plasma accelerators

DOE PAGES

Schroeder, C.  B.; Vay, J. -L.; Esarey, E.; ...

2014-10-03

The minimum obtainable transverse emittance (thermal emittance) of electron beams generated and trapped in plasma-based accelerators using laser ionization injection is examined. The initial transverse phase space distribution following ionization and passage through the laser is derived, and expressions for the normalized transverse beam emittance, both along and orthogonal to the laser polarization, are presented. Results are compared to particle-in-cell simulations. Ultralow emittance beams can be generated using laser ionization injection into plasma accelerators, and examples are presented showing normalized emittances on the order of tens of nm.

Use of probabilistic neural networks for emitter correlation

NASA Astrophysics Data System (ADS)

Maloney, P. S.

1990-08-01

The Probabilistic Neural Network (PNN) as described by Specht''3 has been successfully applied to a number of emitter correlation problems involving operational data for training and testing of the neural net work. The PNN has been found to be a reliable classification tool for determining emitter type or even identifying specific emitter platforms given appropriate representative data sets for training con sisting only of parametric data from electronic intelligence (ELINT) reports. Four separate feasibility studies have been conducted to prove the usefulness of PNN in this application area: . Hull-to-emitter correlation (HULTEC) for identification of seagoing emitter platforms . Identification of landbased emitters from airborne sensors . Pulse sorting according to emitter of origin . Emitter typing based on a dynamically learning neural network. 1 .

Investigations of the emittance and brightness of ion beams from an electron beam ion source of the Dresden EBIS type.

PubMed

Silze, Alexandra; Ritter, Erik; Zschornack, Günter; Schwan, Andreas; Ullmann, Falk

2010-02-01

We have characterized ion beams extracted from the Dresden EBIS-A, a compact room-temperature electron beam ion source (EBIS) with a permanent magnet system for electron beam compression, using a pepper-pot emittance meter. The EBIS-A is the precursor to the Dresden EBIS-SC in which the permanent magnets have been replaced by superconducting solenoids for the use of the source in high-ion-current applications such as heavy-ion cancer therapy. Beam emittance and brightness values were calculated from data sets acquired for a variety of source parameters, in leaky as well as pulsed ion extraction mode. With box shaped pulses of C(4+) ions at an energy of 39 keV root mean square emittances of 1-4 mm mrad and a brightness of 10 nA mm(-2) mrad(-2) were achieved. The results meet the expectations for high quality ion beams generated by an electron beam ion source.

Vertical electron transport in van der Waals heterostructures with graphene layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryzhii, V., E-mail: v-ryzhii@riec.tohoku.ac.jp; Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University and Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 111005; Otsuji, T.

We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equationmore » which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures.« less

Phase control and fast start-up of a magnetron using modulation of an addressable faceted cathode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Browning, J., E-mail: JimBrowning@BoiseState.edu; Fernandez-Gutierrez, S.; Lin, M. C.

The use of an addressable, faceted cathode has been proposed as a method of modulating current injection in a magnetron to improve performance and control phase. To implement the controllable electron emission, five-sided and ten-sided faceted planar cathodes employing gated field emitters are considered as these emitters could be fabricated on flat substrates. For demonstration, the conformal finite-difference time-domain particle-in-cell simulation, as implemented in VORPAL, has been used to model a ten-cavity, rising sun magnetron using the modulated current sources and benchmarked against a typical continuous current source. For the modulated, ten-sided faceted cathode case, the electrons are injected frommore » three emitter elements on each of the ten facets. Each emitter is turned ON and OFF in sequence at the oscillating frequency with five emitters ON at one time to drive the five electron spokes of the π-mode. The emitter duty cycle is then 1/6th the Radio-Frequency (RF) period. Simulations show a fast start-up time as low as 35 ns for the modulated case compared to 100 ns for the continuous current cases. Analysis of the RF phase using the electron spoke locations and the RF magnetic field components shows that the phase is controlled for the modulated case while it is random, as typical, for the continuous current case. Active phase control during oscillation was demonstrated by shifting the phase of the electron injection 180° after oscillations started. The 180° phase shift time was approximately 25 RF cycles.« less

Asymmetrical field emitter

DOEpatents

Fleming, J.G.; Smith, B.K.

1995-10-10

A method is disclosed for providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure. 17 figs.

Heterojunction solar cell

DOEpatents

Olson, Jerry M.

1994-01-01

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

High-temperature, high-power-density thermionic energy conversion for space

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

Theoretic converter outputs and efficiencies indicate the need to consider thermionic energy conversion (TEC) with greater power densities and higher temperatures within reasonable limits for space missions. Converter-output power density, voltage, and efficiency as functions of current density were determined for 1400-to-2000 K emitters with 725-to-1000 K collectors. The results encourage utilization of TEC with hotter-than-1650 K emitters and greater-than-6W sq cm outputs to attain better efficiencies, greater voltages, and higher waste-heat-rejection temperatures for multihundred-kilowatt space-power applications. For example, 1800 K, 30 A sq cm TEC operation for NEP compared with the 1650 K, 5 A/sq cm case should allow much lower radiation weights, substantially fewer and/or smaller emitter heat pipes, significantly reduced reactor and shield-related weights, many fewer converters and associated current-collecting bus bars, less power conditioning, and lower transmission losses. Integration of these effects should yield considerably reduced NEP specific weights.

Compact Blue-Green Lasers: Summaries of Papers Presented at the Topical Meeting Held in Sante Fe, New Mexico on 20-21 February 1992. Volume 6. Technical Digest Series

DTIC Science & Technology

1992-02-21

Contents: Applications, IR Pumped Visible Lasers, Blue-Green Diode Emitters, Materials, Poster Session, Frequency Conversion in Bulk Devices, Gas Lasers, and Frequency Conversion in Guided-Wave Devices.

Field emission chemical sensor for receptor/binder, such as antigen/antibody

DOEpatents

Panitz, John A.

1986-01-01

A field emission chemical sensor for specific detection of a chemical entity in a sample includes a closed chamber enclosing two field emission electrode sets, each field emission electrode set comprising (a) an electron emitter electrode from which field emission electrons can be emitted when an effective voltage is connected to the electrode set; and (b) a collector electrode which will capture said electrons emitted from said emitter electrode. One of the electrode sets is passive to the chemical entity and the other is active thereto and has an active emitter electrode which will bind the chemical entity when contacted therewith.

The conversion of CESR to operate as the Test Accelerator, CesrTA. Part 1: overview

NASA Astrophysics Data System (ADS)

Billing, M. G.

2015-07-01

Cornell's electron/positron storage ring (CESR) was modified over a series of accelerator shutdowns beginning in May 2008, which substantially improves its capability for research and development for particle accelerators. CESR's energy span from 1.8 to 5.6 GeV with both electrons and positrons makes it ideal for the study of a wide spectrum of accelerator physics issues and instrumentation related to present light sources and future lepton damping rings. Additionally a number of these are also relevant for the beam physics of proton accelerators. This paper outlines the motivation, design and conversion of CESR to a test accelerator, CESRTA, enhanced to study such subjects as low emittance tuning methods, electron cloud (EC) effects, intra-beam scattering, fast ion instabilities as well as general improvements to beam instrumentation. While the initial studies of CESRTA focussed on questions related to the International Linear Collider (ILC) damping ring design, CESRTA is a very flexible storage ring, capable of studying a wide range of accelerator physics and instrumentation questions. This paper contains the outline and the basis for a set of papers documenting the reconfiguration of the storage ring and the associated instrumentation required for the studies described above. Further details may be found in these papers.

High-precision branching-ratio measurement for the superallowed β+ emitter 74Rb

NASA Astrophysics Data System (ADS)

Dunlop, R.; Ball, G. C.; Leslie, J. R.; Svensson, C. E.; Towner, I. S.; Andreoiu, C.; Chagnon-Lessard, S.; Chester, A.; Cross, D. S.; Finlay, P.; Garnsworthy, A. B.; Garrett, P. E.; Glister, J.; Hackman, G.; Hadinia, B.; Leach, K. G.; Rand, E. T.; Starosta, K.; Tardiff, E. R.; Triambak, S.; Williams, S. J.; Wong, J.; Yates, S. W.; Zganjar, E. F.

2013-10-01

A high-precision branching-ratio measurement for the superallowed β+ decay of 74Rb was performed at the TRIUMF Isotope Separator and Accelerator (ISAC) radioactive ion-beam facility. The scintillating electron-positron tagging array (SCEPTAR), composed of 10 thin plastic scintillators, was used to detect the emitted β particles; the 8π spectrometer, an array of 20 Compton-suppressed HPGe detectors, was used for detecting γ rays that were emitted following Gamow-Teller and nonanalog Fermi β+ decays of 74Rb; and the Pentagonal Array of Conversion Electron Spectrometers (PACES), an array of 5 Si(Li) detectors, was employed for measuring β-delayed conversion electrons. Twenty-three excited states were identified in 74Kr following 8.241(4)×108 detected 74Rb β decays. A total of 58 γ-ray and electron transitions were placed in the decay scheme, allowing the superallowed branching ratio to be determined as B0=99.545(31)%. Combined with previous half-life and Q-value measurements, the superallowed branching ratio measured in this work leads to a superallowed ft value of 3082.8(65) s. Comparisons between this superallowed ft value and the world-average-corrected Ft¯ value, as well as the nonanalog Fermi branching ratios determined in this work, provide guidance for theoretical models of the isospin-symmetry-breaking corrections in this mass region.

Exact analysis of surface field reduction due to field-emitted vacuum space charge, in parallel-plane geometry, using simple dimensionless equations

NASA Astrophysics Data System (ADS)

Forbes, Richard G.

2008-10-01

This paper reports (a) a simple dimensionless equation relating to field-emitted vacuum space charge (FEVSC) in parallel-plane geometry, namely 9ζ2θ2-3θ-4ζ+3=0, where ζ is the FEVSC "strength" and θ is the reduction in emitter surface field (θ =field-with/field-without FEVSC), and (b) the formula j =9θ2ζ/4, where j is the ratio of emitted current density JP to that predicted by Child's law. These equations apply to any charged particle, positive or negative, emitted with near-zero kinetic energy. They yield existing and additional basic formulas in planar FEVSC theory. The first equation also yields the well-known cubic equation describing the relationship between JP and applied voltage; a method of analytical solution is described. Illustrative FEVSC effects in a liquid metal ion source and in field electron emission are discussed. For Fowler-Nordheim plots, a "turn-over" effect is predicted in the high FEVSC limit. The higher the voltage-to-local-field conversion factor for the emitter concerned, then the higher is the field at which turn over occurs. Past experiments have not found complete turn over; possible reasons are noted. For real field emitters, planar theory is a worst-case limit; however, adjusting ζ on the basis of Monte Carlo calculations might yield formulae adequate for real situations.

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

NASA Technical Reports Server (NTRS)

Luke, K. L.; Cheng, L.-J.

1986-01-01

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Double emittance exchanger as a bunch compressor for the MaRIE XFEL electron beam line at 1 GeV

NASA Astrophysics Data System (ADS)

Malyzhenkov, Alexander; Carlsten, Bruce E.; Yampolsky, Nikolai A.

2017-03-01

We demonstrate an alternative realization of a bunch compressor (specifically, the second bunch compressor for the MaRIE XFEL beamline, 1GeV electron energy) using a double emittance exchanger (EEX) and a telescope in the transverse phase space. We compare our results with a traditional bunch compressor realized via a chicane, taking into account the nonlinear dynamics, Coherent Synchrotron Radiation (CSR) and Space Charge (SC) effects. In particular, we use the Elegant code for tracking particles through the beamline, and analyze the evolution of the eigen-emittances to separate the influence of the CSR/SC effects from the nonlinear dynamics effects. We optimize the scheme parameters to reach a desirable compression factor and minimize the emittance growth. We observe dominant CSR effects in our scheme, resulting in critical emittance growth, and introduce an alternative version of an emittance exchanger with a reduced number of bending magnets to minimize the impact of CSR effects.

Double Emittance Exchanger as a Bunch Compressor for the MaRIE XFEL electron beam line at 1GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malyzhenkov, Alexander; Yampolsky, Nikolai; Carlsten, Bruce Eric

We demonstrate an alternative realization of a bunch compressor (specifically the second bunch compressor for the MaRIE XFEL beamline, 1GeV electron energy) using a double emittance exchanger (EEX) and a telescope in the transverse phase space.We compare our results with a traditional bunch compressor realized via chicane, taking into account the nonlinear dynamics, Coherent Synchrotron Radiation (CSR) and Space Charge (SC) effects. In particular, we use the Elegant code for tracking particles through the beam line and analyze the eigen-emittances evolution to separate the influence of the CSR/SC effects from the nonlinear dynamics effects. We optimize the scheme parameters tomore » reach a desirable compression factor and minimize the emittance growth. We observe dominant CSR-effects in our scheme resulting in critical emittance growth and introduce alternative version of an emittance exchanger with a reduced number of bending magnets to minimize the impact of CSR effects.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hong-Ru; Wang, Shih-Yin; Ou, Sin-Liang

The 120-nm-thick cobalt-doped ZnO (Co-doped ZnO, CZO) dilute magnetic films deposited by pulsed laser deposition were employed as the n-electrodes for both lateral-type blue (450 nm) and green (520 nm) InGaN light emitters. In comparison to the conventional blue and green emitters, there were 15.9% and 17.7% enhancements in the output power (@350 mA) after fabricating the CZO n-electrode on the n-GaN layer. Observations on the role of CZO n-electrodes in efficiency improvement of InGaN light emitters were performed. Based on the results of Hall measurements, the carrier mobilities were 176 and 141 cm{sup 2}/V s when the electrons passed through the n-GaN and themore » patterned-CZO/n-GaN, respectively. By incorporating the CZO n-electrode into the InGaN light emitters, the electrons would be scattered because of the collisions between the magnetic atoms and the electrons as the device is driven, leading to the reduction of the electron mobility. Therefore, the excessively large mobility difference between electron and hole carriers occurred in the conventional InGaN light emitter can be efficiently decreased after preparing the CZO n-electrode on the n-GaN layer, resulting in the increment of carrier recombination rate and the improvement of light output power.« less

Gap-Mode Surface-Plasmon-Enhanced Photoluminescence and Photoresponse of MoS2.

PubMed

Wu, Zhi-Qian; Yang, Jing-Liang; Manjunath, Nallappagar K; Zhang, Yue-Jiao; Feng, Si-Rui; Lu, Yang-Hua; Wu, Jiang-Hong; Zhao, Wei-Wei; Qiu, Cai-Yu; Li, Jian-Feng; Lin, Shi-Sheng

2018-05-22

2D materials hold great potential for designing novel electronic and optoelectronic devices. However, 2D material can only absorb limited incident light. As a representative 2D semiconductor, monolayer MoS 2 can only absorb up to 10% of the incident light in the visible, which is not sufficient to achieve a high optical-to-electrical conversion efficiency. To overcome this shortcoming, a "gap-mode" plasmon-enhanced monolayer MoS 2 fluorescent emitter and photodetector is designed by squeezing the light-field into Ag shell-isolated nanoparticles-Au film gap, where the confined electromagnetic field can interact with monolayer MoS 2 . With this gap-mode plasmon-enhanced configuration, a 110-fold enhancement of photoluminescence intensity is achieved, exceeding values reached by other plasmon-enhanced MoS 2 fluorescent emitters. In addition, a gap-mode plasmon-enhanced monolayer MoS 2 photodetector with an 880% enhancement in photocurrent and a responsivity of 287.5 A W -1 is demonstrated, exceeding previously reported plasmon-enhanced monolayer MoS 2 photodetectors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of thermal-field emission properties and investigation of temperature dependent noise in the field emission current from vertical carbon nanotube emitters

NASA Astrophysics Data System (ADS)

Kolekar, Sadhu; Patole, S. P.; Patil, Sumati; Yoo, J. B.; Dharmadhikari, C. V.

2017-10-01

We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well-defined cathode surface is given by Millikan and Lauritsen [1] for the combination of temperature and electric field effect. The same expression has been used to explain the electron emission characteristics from vertical CNT emitters. Furthermore, this has been applied to explain the electron emission for different temperatures ranging from room temperature to 1500 K. The real-time field electron emission images at room temperature and 1500 K are recorded by using Charge Coupled Device (CCD) in order to understand the effect of temperature on distribution of electron emission spots and ring like structures in Field Emission Microscope (FEM) image. The FEM images could be used to calculate the total number of emitters per cm2 for electron emission. The calculated number of emitters per cm2 from FEM image is typically, 4.5 × 107 and the actual number emitters per cm2 present as per Atomic Force Microscopy (AFM) data is 1.2 × 1012. The measured Current-Voltage (I-V) characteristics exhibit non linear Folwer-Nordheim (F-N) type behavior. The fluctuations in the emission current were recorded at different temperatures and Fast Fourier transformed into temperature dependent power spectral density. The latter was found to obey power law relation S(f) = A(Iδ/fξ), where δ and ξ are temperature dependent current and frequency exponents respectively.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

1996-01-01

A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

Ultrafast transmission electron microscopy using a laser-driven field emitter: Femtosecond resolution with a high coherence electron beam.

PubMed

Feist, Armin; Bach, Nora; Rubiano da Silva, Nara; Danz, Thomas; Möller, Marcel; Priebe, Katharina E; Domröse, Till; Gatzmann, J Gregor; Rost, Stefan; Schauss, Jakob; Strauch, Stefanie; Bormann, Reiner; Sivis, Murat; Schäfer, Sascha; Ropers, Claus

2017-05-01

We present the development of the first ultrafast transmission electron microscope (UTEM) driven by localized photoemission from a field emitter cathode. We describe the implementation of the instrument, the photoemitter concept and the quantitative electron beam parameters achieved. Establishing a new source for ultrafast TEM, the Göttingen UTEM employs nano-localized linear photoemission from a Schottky emitter, which enables operation with freely tunable temporal structure, from continuous wave to femtosecond pulsed mode. Using this emission mechanism, we achieve record pulse properties in ultrafast electron microscopy of 9Å focused beam diameter, 200fs pulse duration and 0.6eV energy width. We illustrate the possibility to conduct ultrafast imaging, diffraction, holography and spectroscopy with this instrument and also discuss opportunities to harness quantum coherent interactions between intense laser fields and free-electron beams. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Exact cancellation of emittance growth due to coupled transverse dynamics in solenoids and rf couplers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dowell, David H.; Zhou, Feng; Schmerge, John

Weak, rotated magnetic and radio frequency quadrupole fields in electron guns and injectors can couple the beam’s horizontal with vertical motion, introduce correlations between otherwise orthogonal transverse momenta, and reduce the beam brightness. This paper discusses two important sources of coupled transverse dynamics common to most electron injectors. The first is quadrupole focusing followed by beam rotation in a solenoid, and the second coupling comes from a skewed high-power rf coupler or cavity port which has a rotated rf quadrupole field. It is shown that a dc quadrupole field can correct for both types of couplings and exactly cancel theirmore » emittance growths. The degree of cancellation of the rf skew quadrupole emittance is limited by the electron bunch length. Analytic expressions are derived and compared with emittance simulations and measurements.« less

Exact cancellation of emittance growth due to coupled transverse dynamics in solenoids and rf couplers

DOE PAGES

Dowell, David H.; Zhou, Feng; Schmerge, John

2018-01-17

Weak, rotated magnetic and radio frequency quadrupole fields in electron guns and injectors can couple the beam’s horizontal with vertical motion, introduce correlations between otherwise orthogonal transverse momenta, and reduce the beam brightness. This paper discusses two important sources of coupled transverse dynamics common to most electron injectors. The first is quadrupole focusing followed by beam rotation in a solenoid, and the second coupling comes from a skewed high-power rf coupler or cavity port which has a rotated rf quadrupole field. It is shown that a dc quadrupole field can correct for both types of couplings and exactly cancel theirmore » emittance growths. The degree of cancellation of the rf skew quadrupole emittance is limited by the electron bunch length. Analytic expressions are derived and compared with emittance simulations and measurements.« less

Modeling of Diamond Field-Emitter-Arrays for high brightness photocathode applications

NASA Astrophysics Data System (ADS)

Kwan, Thomas; Huang, Chengkun; Piryatinski, Andrei; Lewellen, John; Nichols, Kimberly; Choi, Bo; Pavlenko, Vitaly; Shchegolkov, Dmitry; Nguyen, Dinh; Andrews, Heather; Simakov, Evgenya

2017-10-01

We propose to employ Diamond Field-Emitter-Arrays (DFEAs) as high-current-density ultra-low-emittance photocathodes for compact laser-driven dielectric accelerators capable of generating ultra-high brightness electron beams for advanced applications. We develop a semi-classical Monte-Carlo photoemission model for DFEAs that includes carriers' transport to the emitter surface and tunneling through the surface under external fields. The model accounts for the electronic structure size quantization affecting the transport and tunneling process within the sharp diamond tips. We compare this first principle model with other field emission models, such as the Child-Langmuir and Murphy-Good models. By further including effects of carrier photoexcitation, we perform simulations of the DFEAs' photoemission quantum yield and the emitted electron beam. Details of the theoretical model and validation against preliminary experimental data will be presented. Work ssupported by LDRD program at LANL.

Up-conversion in rare-earth doped micro-particles applied to new emissive two-dimensional displays

NASA Astrophysics Data System (ADS)

Milliez, Anne Janet

Up-conversion (UC) in rare-earth co-doped fluorides to convert diode laser light in the near infrared to red, green and blue visible light is applied to make possible high performance emissive displays. The infrared-to-visible UC in the materials we study is a sequential form of non-linear two photon absorption in which a strong absorbing constituent absorbs two low energy photons and transfers this energy to another constituent which emits visible light. Some of the UC emitters' most appealing characteristics for displays are: a wide color gamut with very saturated colors, very high brightness operation without damage to the emitters, long lifetimes and efficiencies comparable to those of existing technologies. Other advantages include simplicity of fabrication, versatility of operating modes, and the potential for greatly reduced display weight and depth. Thanks to recent advances in material science and diode laser technology at the excitation wavelength, UC selected materials can be very efficient visible emitters. However, optimal UC efficiencies strongly depend on chosing proper operating conditions. In this thesis, we studied the conditions required for optimization. We demonstrated that high efficiency UC depends on high pump irradiance, low temperature and low scattering. With this understanding we can predict how to optimally use UC emitters in a wide range of applications. In particular, we showed how our very efficient UC emitters can be applied to make full color displays and very efficient white light sources.

Metal Photocathodes for Free Electron Laser Applications

NASA Astrophysics Data System (ADS)

Greaves, Corin Michael Ricardo

Synchrotron x-ray radiation sources have revolutionized many areas of science from elucidating the atomic structure of proteins to understanding the electronic structure of complex materials such as the cuprate superconductors. In a Free Electron Laser (FEL), the main difference to the synchrotron radiation mechanism is that the light field acts on the electron beam, over a long distance in an undulator, and causes electron bunching at the optical wavelength. Electrons in different parts of the electron bunch are therefore correlated, and so emit coherently, with a brightness that scales as the square of the number of electrons. In order to lase, the electron beam in a FEL must have a transverse geometric emittance less than the wavelength of the light to be produced. For the generation of x-ray wavelengths, this is one of the most difficult challenges in the design and construction of a FEL. The geometric emittance can be "compressed" by acceleration to very high energy, but with the penalty of very large physical size and very large cost. The motivation for this work was provided by the desire to investigate the fundamental origin of the emittance of an electron beam as it is born at a photocathode. If this initial, or "thermal" emittance can be reduced, the energy, scale and cost of accelerators potentially would be reduced. As the LCLS used copper as its photocathode, this material was the one studied in this work. Copper was used in the LCLS as it represented a "robust" material that could stand the very high accelerating gradients used in the photoinjector of the FEL. Metals are also prompt photoemitters, and so can be used to produce very short electron bunches. This can be a useful property for creation of extremely short FEL pulses, and also for creation of beams that are allowed to expand under space charge forces, but in a way that results in linear fields, allowing subsequent recompression. An ideal photocathode for FEL photoinjector should have high quantum efficiency (QE), small emittance, fast temporal response, long lifetime, and minimal complexity. High QE of cathodes require less power for driving laser and also reduce the risk of damaging the cathode materials. Small emittance reduce the scale of the accelerator, therefore, the cost. Metal photocathodes such as copper exhibit long lifetime and fast response, but have quite low quantum efficiency ( < 10-4). The aim in this work was to understand the quantum yield of the metal, and the transverse momentum spectrum, as the product of the latter and the cathode beam spot size gives the transverse emittance. Initial x-ray diffraction work provided evidence that the LCLS photocathode consisted of large low index single crystal grains, and so work focused on the study of single crystals that could be produced with atomically ordered surfaces, rather than a polycrystalline material. Present theories of quantum yield and transverse emittance assume the basic premise that the metal is entirely disordered, and work here shows that this is fundamentally incorrect, and that the order of the surface plays a critical role in determining the characteristics of emission. In order to investigate these surfaces, I constructed a laser-based ultra-low energy angle resolved photoemission system, capable of measuring the momentum spectrum of the emission and wavelength and angle dependent electron yield. This system has been commissioned, and data taken on low index surfaces of copper. Results from this work on single crystal copper demonstrates that emitted electrons from the band structure of a material can exhibit small emittance and high quantum efficiency. We show that the emission from the Cu(111) surface state is highly correlated between angle of incidence and excitation energy. This manifests itself in the form of a truncated emission cone, rather than the isotropic emission predicted from the normal model. This clearly then reduces the emittance from the normal values. It also results in extremely strong polarization dependence, with p-s asymmetry of up to 16 at low photon energy. It also directly suggests ways through changing materials, or by material design to significantly reduce emittance, at the same time increasing electron yield. These results show the benefits that could be gained from electronic engineering of cathodes and should have direct impact in the design of future FEL photoinjectors. (Abstract shortened by UMI.)

Heterojunction solar cell

DOEpatents

Olson, J.M.

1994-08-30

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

1996-04-16

A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

Intrinsic beam emittance of laser-accelerated electrons measured by x-ray spectroscopic imaging.

PubMed

Golovin, G; Banerjee, S; Liu, C; Chen, S; Zhang, J; Zhao, B; Zhang, P; Veale, M; Wilson, M; Seller, P; Umstadter, D

2016-04-19

The recent combination of ultra-intense lasers and laser-accelerated electron beams is enabling the development of a new generation of compact x-ray light sources, the coherence of which depends directly on electron beam emittance. Although the emittance of accelerated electron beams can be low, it can grow due to the effects of space charge during free-space propagation. Direct experimental measurement of this important property is complicated by micron-scale beam sizes, and the presence of intense fields at the location where space charge acts. Reported here is a novel, non-destructive, single-shot method that overcame this problem. It employed an intense laser probe pulse, and spectroscopic imaging of the inverse-Compton scattered x-rays, allowing measurement of an ultra-low value for the normalized transverse emittance, 0.15 (±0.06) π mm mrad, as well as study of its subsequent growth upon exiting the accelerator. The technique and results are critical for designing multi-stage laser-wakefield accelerators, and generating high-brightness, spatially coherent x-rays.

Intrinsic beam emittance of laser-accelerated electrons measured by x-ray spectroscopic imaging

DOE PAGES

Golovin, G.; Banerjee, S.; Liu, C.; ...

2016-04-19

Here, the recent combination of ultra-intense lasers and laser-accelerated electron beams is enabling the development of a new generation of compact x-ray light sources, the coherence of which depends directly on electron beam emittance. Although the emittance of accelerated electron beams can be low, it can grow due to the effects of space charge during free-space propagation. Direct experimental measurement of this important property is complicated by micron-scale beam sizes, and the presence of intense fields at the location where space charge acts. Reported here is a novel, non-destructive, single-shot method that overcame this problem. It employed an intense lasermore » probe pulse, and spectroscopic imaging of the inverse-Compton scattered x-rays, allowing measurement of an ultra-low value for the normalized transverse emittance, 0.15 (±0.06) π mm mrad, as well as study of its subsequent growth upon exiting the accelerator. The technique and results are critical for designing multi-stage laser-wakefield accelerators, and generating high-brightness, spatially coherent x-rays.« less

Tunneling modulation of a quantum-well transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

2016-11-01

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

Carbon Nanotube Field Emitters Synthesized on Metal Alloy Substrate by PECVD for Customized Compact Field Emission Devices to Be Used in X-Ray Source Applications.

PubMed

Park, Sangjun; Gupta, Amar Prasad; Yeo, Seung Jun; Jung, Jaeik; Paik, Sang Hyun; Mativenga, Mallory; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2018-05-29

In this study, a simple, efficient, and economical process is reported for the direct synthesis of carbon nanotube (CNT) field emitters on metal alloy. Given that CNT field emitters can be customized with ease for compact and cold field emission devices, they are promising replacements for thermionic emitters in widely accessible X-ray source electron guns. High performance CNT emitter samples were prepared in optimized plasma conditions through the plasma-enhanced chemical vapor deposition (PECVD) process and subsequently characterized by using a scanning electron microscope, tunneling electron microscope, and Raman spectroscopy. For the cathode current, field emission (FE) characteristics with respective turn on (1 μA/cm²) and threshold (1 mA/cm²) field of 2.84 and 4.05 V/μm were obtained. For a field of 5.24 V/μm, maximum current density of 7 mA/cm² was achieved and a field enhancement factor β of 2838 was calculated. In addition, the CNT emitters sustained a current density of 6.7 mA/cm² for 420 min under a field of 5.2 V/μm, confirming good operational stability. Finally, an X-ray generated image of an integrated circuit was taken using the compact field emission device developed herein.

Instrumentation for the study of low emittance tuning and beam dynamics at CESR

NASA Astrophysics Data System (ADS)

Billing, M. G.; Dobbins, J. A.; Forster, M. J.; Kreinick, D. L.; Meller, R. E.; Peterson, D. P.; Ramirez, G. A.; Rendina, M. C.; Rider, N. T.; Sagan, D. C.; Shanks, J.; Sikora, J. P.; Stedinger, M. G.; Strohman, C. R.; Williams, H. A.; Palmer, M. A.; Holtzapple, R. L.; Flanagan, J.

2017-11-01

The Cornell Electron-positron Storage Ring (CESR) has been converted from a High Energy Physics electron-positron collider to operate as a dedicated synchrotron light source for the Cornell High Energy Synchrotron Source (CHESS) and to conduct accelerator physics research as a test accelerator, capable of studying topics relevant to future damping rings, colliders and light sources. Some of the specific topics that were targeted for the initial phase of operation of the storage ring in this mode for CESR as a Test Accelerator (CesrTA) included 1) tuning techniques to produce low emittance beams, 2) the study of electron cloud development in a storage ring and 3) intra-beam scattering effects. The complete conversion of CESR to CesrTA occurred over a several year period, described elsewhere [1-3]. In addition to instrumentation for the storage ring, which was created for CesrTA, existing instrumentation was modified to facilitate the entire range of investigations to support these studies. Procedures were developed, often requiring coordinated measurements among different instruments [4]. This paper describes the instruments utilized for the study of beam dynamics during the operation of CesrTA. The treatment of these instruments will remain fairly general in this paper as it focusses on an overview of the instruments themselves. Their interaction and inter-relationships during sequences of observations is found in a companion paper describing the associated measurement techniques. More detailed descriptions and detailed operational performance for some of the instrumentation may be found elsewhere and these will be referenced in the related sections of this paper.

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

NASA Astrophysics Data System (ADS)

Zhang, Lei; Shen, Hong-Lie; Yue, Zhi-Hao; Jiang, Feng; Wu, Tian-Ru; Pan, Yuan-Yuan

2013-01-01

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density—voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.

Two-color ionization injection using a plasma beatwave accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schroeder, C. B.; Benedetti, C.; Esarey, E.

Two-color laser ionization injection is a method to generate ultra-low emittance (sub-100 nm transverse normalized emittance) beams in a laser-driven plasma accelerator. A plasma beatwave accelerator is proposed to drive the plasma wave for ionization injection, where the beating of the lasers effectively produces a train of long-wavelength pulses. The plasma beatwave accelerator excites a large amplitude plasma wave with low peak laser electric fields, leaving atomically-bound electrons with low ionization potential. A short-wavelength, low-amplitude ionization injection laser pulse (with a small ponderomotive force and large peak electric field) is used to ionize the remaining bound electrons at a wakemore » phase suitable for trapping, generating an ultra-low emittance electron beam that is accelerated in the plasma wave. Using a plasma beatwave accelerator for wakefield excitation, compared to short-pulse wakefield excitation, allows for a lower amplitude injection laser pulse and, hence, a lower emittance beam may be generated.« less

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

PubMed

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-11

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g (2) (0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Two-color ionization injection using a plasma beatwave accelerator

DOE PAGES

Schroeder, C. B.; Benedetti, C.; Esarey, E.; ...

2018-01-10

Two-color laser ionization injection is a method to generate ultra-low emittance (sub-100 nm transverse normalized emittance) beams in a laser-driven plasma accelerator. A plasma beatwave accelerator is proposed to drive the plasma wave for ionization injection, where the beating of the lasers effectively produces a train of long-wavelength pulses. The plasma beatwave accelerator excites a large amplitude plasma wave with low peak laser electric fields, leaving atomically-bound electrons with low ionization potential. A short-wavelength, low-amplitude ionization injection laser pulse (with a small ponderomotive force and large peak electric field) is used to ionize the remaining bound electrons at a wakemore » phase suitable for trapping, generating an ultra-low emittance electron beam that is accelerated in the plasma wave. Using a plasma beatwave accelerator for wakefield excitation, compared to short-pulse wakefield excitation, allows for a lower amplitude injection laser pulse and, hence, a lower emittance beam may be generated.« less

Low emittance lattice for the storage ring of the Turkish Light Source Facility TURKAY

NASA Astrophysics Data System (ADS)

Nergiz, Z.; Aksoy, A.

2015-06-01

The TAC (Turkish Accelerator Center) project aims to build an accelerator center in Turkey. The first stage of the project is to construct an Infra-Red Free Electron Laser (IR-FEL) facility. The second stage is to build a synchrotron radiation facility named TURKAY, which is a third generation synchrotron radiation light source that aims to achieve a high brilliance photon beam from a low emittance electron beam at 3 GeV. The electron beam parameters are highly dependent on the magnetic lattice of the storage ring. In this paper a low emittance storage ring for TURKAY is proposed and the beam dynamic properties of the magnetic lattice are investigated. Supported by Turkish Republic Ministry of Development (DPT2006K120470)

Increase of intrinsic emittance induced by multiphoton photoemission from copper cathodes illuminated by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

An, Chenjie; Zhu, Rui; Xu, Jun; Liu, Yaqi; Hu, Xiaopeng; Zhang, Jiasen; Yu, Dapeng

2018-05-01

Electron sources driven by femtosecond laser have important applications in many aspects, and the research about the intrinsic emittance is becoming more and more crucial. The intrinsic emittance of polycrystalline copper cathode, which was illuminated by femtosecond pulses (FWHM of the pulse duration was about 100 fs) with photon energies above and below the work function, was measured with an extremely low bunch charge (single-electron pulses) based on free expansion method. A minimum emittance was obtained at the photon energy very close to the effective work function of the cathode. When the photon energy decreased below the effective work function, emittance increased rather than decreased or flattened out to a constant. By investigating the dependence of photocurrent density on the incident laser intensity, we found the emission excited by pulsed photons with sub-work-function energies contained two-photon photoemission. In addition, the portion of two-photon photoemission current increased with the reduction of photon energy. We attributed the increase of emittance to the effect of two-photon photoemission. This work shows that conventional method of reducing the photon energy of excited light source to approach the room temperature limit of the intrinsic emittance may be infeasible for femtosecond laser. There would be an optimized photon energy value near the work function to obtain the lowest emittance for pulsed laser pumped photocathode.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Nath, Digbijoy N.

We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.

Thermoelectronic laser energy conversion for power transmission in space

NASA Technical Reports Server (NTRS)

Britt, E. J.; Yuen, C.

1977-01-01

Long distance transmission of power in space by means of laser beams is an attractive concept because of the very narrow beam divergence. Such a system requires efficient means to both generate the laser beam and to convert the light energy in the beam into useful electric output at the receiver. A plasma-type device known as a Thermo-Electronic Laser Energy Converter (TELEC) has been studied as a method of converting a 10.6 micron CO2 laser beam into electric power. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes with different areas. Since more electrons are collected by the larger electrode there is a net transport of current, and an EMF is generated in the external circuit. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the large electrode. A design for a TELEC system with an input 1 MW laser beam was developed as part of the study. The calculated performance of the system showed an overall efficiency of about 42%.

Emittance Effects on Gain in $W$ -Band TWTs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlsten, Bruce Eric; Nichols, Kimberley E.; Shchegolkov, Dmitry Yu.

We consider the main effects of beam emittance on W-band traveling-wave tube (TWT) performance and gain. Specifically, we consider a representative dielectric TWT structure with ~5 dB/cm of gain driven by a 5-A, 20-keV, sheet electron beam that is focused by a wiggler magnetic field. The normalized beam transverse emittance must be about 1 μm or lower to ensure that both the transport is stable and the gain is not degraded by the effective energy spread arising from the emittance. This emittance limit scales roughly inversely with frequency.

Emittance Effects on Gain in $W$ -Band TWTs

DOE PAGES

Carlsten, Bruce Eric; Nichols, Kimberley E.; Shchegolkov, Dmitry Yu.; ...

2016-10-20

We consider the main effects of beam emittance on W-band traveling-wave tube (TWT) performance and gain. Specifically, we consider a representative dielectric TWT structure with ~5 dB/cm of gain driven by a 5-A, 20-keV, sheet electron beam that is focused by a wiggler magnetic field. The normalized beam transverse emittance must be about 1 μm or lower to ensure that both the transport is stable and the gain is not degraded by the effective energy spread arising from the emittance. This emittance limit scales roughly inversely with frequency.

Selective Emitters for High Efficiency TPV Conversion: Materials Preparation and Characterisation

NASA Astrophysics Data System (ADS)

Diso, D.; Licciulli, A.; Bianco, A.; Leo, G.; Torsello, G.; Tundo, S.; De Risi, A.; Mazzer, M.

2003-01-01

Optimising the spectral emissivity of the IR radiation source in a TPV generator is one of the crucial steps towards high efficiency TPV conversion. In this paper we present different approaches to the preparation of selective emitters to be coupled to high efficiency photovoltaic cells. The emitters are designed to work at a temperature of about 1500K and they have been prepared to be used either as external coatings for the burner or as a structural material for the burner itself. Composite ceramics containing rare earth cations, prepared by slip-casting, with various concentration of rare earths were prepared by Slip Casting and Slurry Coating. Rare earth oxides have been incorporated into different oxide matrices, namely Silica, Alumina, Zirconia and their combination. The final aim was to find the material that exhibits the best performance in terms of both high selective power emission, good efficiency along with acceptable thermo-structural properties (high temperature thermal shock resistance, good strength, no creep). The power density emitted by samples as function of the temperature has been tested in the range 1000nm-5000nm. The high temperature emission measurements and the structural tests indicate that a good compromise between the functional and the thermo-structural properties may be reached. The results of the tests on the emitter coatings carried out in a TPV generator at the operating conditions are also presented in this paper.

A tunable electron beam source using trapping of electrons in a density down-ramp in laser wakefield acceleration.

PubMed

Ekerfelt, Henrik; Hansson, Martin; Gallardo González, Isabel; Davoine, Xavier; Lundh, Olle

2017-09-25

One challenge in the development of laser wakefield accelerators is to demonstrate sufficient control and reproducibility of the parameters of the generated bunches of accelerated electrons. Here we report on a numerical study, where we demonstrate that trapping using density down-ramps allows for tuning of several electron bunch parameters by varying the properties of the density down-ramp. We show that the electron bunch length is determined by the difference in density before and after the ramp. Furthermore, the transverse emittance of the bunch is controlled by the steepness of the ramp. Finally, the amount of trapped charge depends both on the density difference and on the steepness of the ramp. We emphasize that both parameters of the density ramp are feasible to vary experimentally. We therefore conclude that this tunable electron accelerator makes it suitable for a wide range of applications, from those requiring short pulse length and low emittance, such as the free-electron lasers, to those requiring high-charge, large-emittance bunches to maximize betatron X-ray generation.

Rare Earth Doped Yttrium Aluminum Garnet (YAG) Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Pal, AnnaMarie T.; Patton, Martin O.; Jenkins, Phillip P.

1999-01-01

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study presents a spectral emittance model for films and cylinders of rare earth doped yttrium aluminum garnets. Good agreement between experimental and theoretical film spectral emittances was found for erbium and holmium aluminum garnets. Spectral emittances of films are sensitive to temperature differences across the film. For operating conditions of interest, the film emitter experiences a linear temperature variation whereas the cylinder emitter has a more advantageous uniform temperature. Emitter efficiency is also a sensitive function of temperature. For holminum aluminum garnet film the efficiency is 0.35 at 1446K but only 0.27 at 1270 K.

Generating high-brightness electron beams via ionization injection by transverse colliding lasers in a plasma-wakefield accelerator.

PubMed

Li, F; Hua, J F; Xu, X L; Zhang, C J; Yan, L X; Du, Y C; Huang, W H; Chen, H B; Tang, C X; Lu, W; Joshi, C; Mori, W B; Gu, Y Q

2013-07-05

The production of ultrabright electron bunches using ionization injection triggered by two transversely colliding laser pulses inside a beam-driven plasma wake is examined via three-dimensional particle-in-cell simulations. The relatively low intensity lasers are polarized along the wake axis and overlap with the wake for a very short time. The result is that the residual momentum of the ionized electrons in the transverse plane of the wake is reduced, and the injection is localized along the propagation axis of the wake. This minimizes both the initial thermal emittance and the emittance growth due to transverse phase mixing. Simulations show that ultrashort (~8 fs) high-current (0.4 kA) electron bunches with a normalized emittance of 8.5 and 6 nm in the two planes, respectively, and a brightness of 1.7×10(19) A rad(-2) m(-2) can be obtained for realistic parameters.

Combustor design tool for a gas fired thermophotovoltaic energy converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lindler, K.W.; Harper, M.J.

1995-12-31

Recently, there has been a renewed interest in thermophotovoltaic (TPV) energy conversion. A TPV device converts radiant energy from a high temperature incandescent emitter directly into electricity by photovoltaic cells. The current Department of Energy sponsored research involves the design, construction and demonstration of a prototype TPV converter that uses a hydrocarbon fuel (such as natural gas) as the energy source. As the photovoltaic cells are designed to efficiently convert radiant energy at a prescribed wavelength, it is important that the temperature of the emitter be nearly constant over its entire surface. The U. S. Naval Academy has been taskedmore » with the development of a small emitter (with a high emissivity) that can be maintained at 1756 K (2700 F). This paper describes the computer spreadsheet model that was developed as a tool to be used for the design of the high temperature emitter.« less

A Polarized Electron RF Photoinjector Using the Plane-Wave-Transformer (PWT) Design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, James E

Polarized electron beams are now in routine use in particle accelerators for nuclear and high energy physics experiments. These beams are presently produced by dc-biased photoelectron sources combined with rf chopping and bunching systems with inherently high transverse emittances. Low emittances can be produced with an rf gun, but the vacuum environment has until now been considered too harsh to support a negative electron affinity GaAs photocathode. We propose to significantly improve the vacuum conditions by adapting a PWT rf photoinjector to achieve reasonable cathode emission rates and lifetimes. This adaptation can also be combined with special optics that willmore » result in a flat beam with a normalized rms emittance in the narrow dimension that may be as low as 10{sup -8} m.« less

RF emittance in a low energy electron linear accelerator

NASA Astrophysics Data System (ADS)

Sanaye Hajari, Sh.; Haghtalab, S.; Shaker, H.; Kelisani, M. Dayyani

2018-04-01

Transverse beam dynamics of an 8 MeV low current (10 mA) S-band traveling wave electron linear accelerator has been studied and optimized. The main issue is to limit the beam emittance, mainly induced by the transverse RF forces. The linac is being constructed at Institute for Research in Fundamental Science (IPM), Tehran Iran Labeled as Iran's First Linac, nearly all components of this accelerator are designed and constructed within the country. This paper discusses the RF coupler induced field asymmetry and the corresponding emittance at different focusing levels, introduces a detailed beam dynamics design of a solenoid focusing channel aiming to reduce the emittance growth and studies the solenoid misalignment tolerances. In addition it has been demonstrated that a prebuncher cavity with appropriate parameters can help improving the beam quality in the transverse plane.

Space charge effects on the current-voltage characteristics of gated field emitter arrays

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Kodis, M. A.; Murphy, R. A.; Zaidman, E. G.

1997-07-01

Microfabricated field emitter arrays (FEAs) can provide the very high electron current densities required for rf amplifier applications, typically on the order of 100 A/cm2. Determining the dependence of emission current on gate voltage is important for the prediction of emitter performance for device applications. Field emitters use high applied fields to extract current, and therefore, unlike thermionic emitters, the current densities can exceed 103A/cm2 when averaged over an array. At such high current densities, space charge effects (i.e., the influence of charge between cathode and collector on emission) affect the emission process or initiate conditions which can lead to failure mechanisms for field emitters. A simple model of a field emitter will be used to calculate the one-dimensional space charge effects on the emission characteristics by examining two components: charge between the gate and anode, which leads to Child's law, and charge within the FEA unit cell, which gives rise to a field suppression effect which can exist for a single field emitter. The predictions of the analytical model are compared with recent experimental measurements designed to assess space charge effects and predict the onset of gate current. It is shown that negative convexity on a Fowler-Nordheim plot of Ianode(Vgate) data can be explained in terms of field depression at the emitter tip in addition to reflection of electrons by a virtual cathode created when the anode field is insufficient to extract all of the current; in particular, the effects present within the unit cell constitute a newly described effect.

High-efficiency solar-thermophotovoltaic system equipped with a monolithic planar selective absorber/emitter

NASA Astrophysics Data System (ADS)

Shimizu, Makoto; Kohiyama, Asaka; Yugami, Hiroo

2015-01-01

We demonstrate a high-efficiency solar-thermophotovoltaic system (STPV) using a monolithic, planar, and spectrally selective absorber/emitter. A complete STPV system using gallium antimonide (GaSb) cells was designed and fabricated to conduct power generation tests. To produce a high-efficiency STPV, it is important to match the thermal radiation spectrum with the sensitive region of the GaSb cells. Therefore, to reach high temperatures with low incident power, a planar absorber/emitter is incorporated for controlling the thermal radiation spectrum. This multilayer coating consists of thin-film tungsten sandwiched by yttria-stabilized zirconia. The system efficiency is estimated to be 16% when accounting for the optical properties of the fabricated absorber/emitter. Power generation tests using a high-concentration solar simulator show that the absorber/emitter temperature peaks at 1640 K with an incident power density of 45 W/cm2, which can be easily obtained by low-cost optics such as Fresnel lenses. The conversion efficiency became 23%, exceeding the Shockley-Queisser limit for GaSb, with a bandgap of 0.67 eV. Furthermore, a total system efficiency of 8% was obtained with the view factor between the emitter and the cell assumed to be 1.

Effect of horizontal molecular orientation on triplet-exciton diffusion in amorphous organic films

NASA Astrophysics Data System (ADS)

Sawabe, T.; Takasu, I.; Yonehara, T.; Ono, T.; Yoshida, J.; Enomoto, S.; Amemiya, I.; Adachi, C.

2012-09-01

Triplet harvesting is a candidate technology for highly efficient and long-life white OLEDs, where green or red phosphorescent emitters are activated by the triplet-excitons diffused from blue fluorescent emitters. We examined two oxadiazole-based electron transport materials with different horizontal molecular orientation as a triplet-exciton diffusion layer (TDL) in triplet-harvesting OLEDs. The device characteristics and the transient electroluminescent analyses of the red phosphorescent emitter showed that the triplet-exciton diffusion was more effective in the highly oriented TDL. The results are ascribed to the strong orbital overlap between the oriented molecules, which provides rapid electron exchange (Dexter energy transfer) in the TDL.

Recent progress of carbon nanotube field emitters and their application.

PubMed

Seelaboyina, Raghunandan; Choi, Wonbong

2007-01-01

The potential of utilizing carbon nanotube field emission properties is an attractive feature for future vacuum electronic devices including: high power microwave, miniature x-ray, backlight for liquid crystal displays and flat panel displays. Their high emission current, nano scale geometry, chemical inertness and low threshold voltage for emission are attractive features for the field emission applications. In this paper we review the recent developments of carbon nanotube field emitters and their device applications. We also discuss the latest results on field emission current amplification achieved with an electron multiplier microchannel plate, and emission performance of multistage field emitter based on oxide nanowire operated in poor vacuum.

Rare-Earth Oxide (Yb2O3) Selective Emitter Fabrication and Evaluation

NASA Technical Reports Server (NTRS)

Jennette, Bryan; Gregory, Don A.; Herren, Kenneth; Tucker, Dennis; Smith, W. Scott (Technical Monitor)

2001-01-01

This investigation involved the fabrication and evaluation of rare-earth oxide selective emitters. The first goal of this study was to successfully fabricate the selective emitter samples using paper and ceramic materials processing techniques. The resulting microstructure was also analyzed using a Scanning Electron Microscope. All selective emitter samples fabricated for this study were made with ytterbium oxide (Yb2O3). The second goal of this study involved the measurement of the spectral emission and the radiated power of all the selective emitter samples. The final goal of this study involved the direct comparison of the radiated power emitted by the selective emitter samples to that of a standard blackbody at the same temperature and within the same wavelength range.

ELECTRON BEAM SHAPING AND ITS APPLICATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halavanau, Aliaksei

Transverse and longitudinal electron beam shaping is a crucial part of high-brightness electron accelerator operations. In this dissertation, we report on the corresponding beam dynamics research conducted at Fermilab Accelerator Science and Technology facility (FAST) and Argonne Wakeeld Accelerator (AWA). We demonstrate an experimental method for spatial laser and electron beam shaping using microlens arrays (MLAs) at a photoinjector facility. Such a setup was built at AWA and resulted in transverse emittance reduction by a factor of 2. We present transverse emittance partitioning methods that were recently employed at FAST facility. A strongly coupled electron beam was generated in anmore » axial magnetic eld and accelerated in 1.3 GHz SRF cavities to 34 MeV. It was then decoupled in Round-To-Flat beam transformer and beams with emittance asymmetry ratio of 100 were generated. We introduce the new methods of measuring electron beam canonical angular momentum, beam transformer optimization and beam image analysis. We also describe a potential longitudinal space-charge amplier setup for FAST high-energy beamline. As an outcome, a broadband partially coherent radiation in the UV range could be generated.« less

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography

NASA Astrophysics Data System (ADS)

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-01

The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via in-situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with $g^{(2)}(0) = 0.13\\pm 0.02$. Due to its high patterning resolution as well as spectral and spatial control, in-situ electron beam lithography allows for integration of pre-selected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way towards multi-node, fully integrated quantum photonic chips.

Reversible electron-hole separation in a hot carrier solar cell

NASA Astrophysics Data System (ADS)

Limpert, S.; Bremner, S.; Linke, H.

2015-09-01

Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron-hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron-hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the Sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices.

Theory of Carbon Nanotube (CNT)-Based Electron Field Emitters

PubMed Central

Bocharov, Grigory S.; Eletskii, Alexander V.

2013-01-01

Theoretical problems arising in connection with development and operation of electron field emitters on the basis of carbon nanotubes are reviewed. The physical aspects of electron field emission that underlie the unique emission properties of carbon nanotubes (CNTs) are considered. Physical effects and phenomena affecting the emission characteristics of CNT cathodes are analyzed. Effects given particular attention include: the electric field amplification near a CNT tip with taking into account the shape of the tip, the deviation from the vertical orientation of nanotubes and electrical field-induced alignment of those; electric field screening by neighboring nanotubes; statistical spread of the parameters of the individual CNTs comprising the cathode; the thermal effects resulting in degradation of nanotubes during emission. Simultaneous consideration of the above-listed effects permitted the development of the optimization procedure for CNT array in terms of the maximum reachable emission current density. In accordance with this procedure, the optimum inter-tube distance in the array depends on the region of the external voltage applied. The phenomenon of self-misalignment of nanotubes in an array has been predicted and analyzed in terms of the recent experiments performed. A mechanism of degradation of CNT-based electron field emitters has been analyzed consisting of the bombardment of the emitters by ions formed as a result of electron impact ionization of the residual gas molecules. PMID:28348342

Modeling quantum yield, emittance, and surface roughness effects from metallic photocathodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dimitrov, D. A.; Bell, G. I.; Smedley, J.

Here, detailed measurements of momentum distributions of emitted electrons have allowed the investigation of the thermal limit of the transverse emittance from metal photocathodes. Furthermore, recent developments in material design and growth have resulted in photocathodes that can deliver high quantum efficiency and are sufficiently robust to use in high electric field gradient photoinjectors and free electron lasers. The growth process usually produces photoemissive material layers with rough surface profiles that lead to transverse accelerating fields and possible work function variations, resulting in emittance growth. To better understand the effects of temperature, density of states, and surface roughness on themore » properties of emitted electrons, we have developed realistic three-dimensional models for photocathode materials with grated surface structures. They include general modeling of electron excitation due to photon absorption, charge transport, and emission from flat and rough metallic surfaces. The models also include image charge and field enhancement effects. We report results from simulations with flat and rough surfaces to investigate how electron scattering, controlled roughness, work function variation, and field enhancement affect emission properties. Comparison of simulation results with measurements of the quantum yield and transverse emittance from flat Sb emission surfaces shows the importance of including efficient modeling of photon absorption, temperature effects, and the material density of states to achieve agreement with the experimental data.« less

Modeling quantum yield, emittance, and surface roughness effects from metallic photocathodes

DOE PAGES

Dimitrov, D. A.; Bell, G. I.; Smedley, J.; ...

2017-10-26

Here, detailed measurements of momentum distributions of emitted electrons have allowed the investigation of the thermal limit of the transverse emittance from metal photocathodes. Furthermore, recent developments in material design and growth have resulted in photocathodes that can deliver high quantum efficiency and are sufficiently robust to use in high electric field gradient photoinjectors and free electron lasers. The growth process usually produces photoemissive material layers with rough surface profiles that lead to transverse accelerating fields and possible work function variations, resulting in emittance growth. To better understand the effects of temperature, density of states, and surface roughness on themore » properties of emitted electrons, we have developed realistic three-dimensional models for photocathode materials with grated surface structures. They include general modeling of electron excitation due to photon absorption, charge transport, and emission from flat and rough metallic surfaces. The models also include image charge and field enhancement effects. We report results from simulations with flat and rough surfaces to investigate how electron scattering, controlled roughness, work function variation, and field enhancement affect emission properties. Comparison of simulation results with measurements of the quantum yield and transverse emittance from flat Sb emission surfaces shows the importance of including efficient modeling of photon absorption, temperature effects, and the material density of states to achieve agreement with the experimental data.« less

High quality ultrafast transmission electron microscopy using resonant microwave cavities.

PubMed

Verhoeven, W; van Rens, J F M; Kieft, E R; Mutsaers, P H A; Luiten, O J

2018-05-01

Ultrashort, low-emittance electron pulses can be created at a high repetition rate by using a TM 110 deflection cavity to sweep a continuous beam across an aperture. These pulses can be used for time-resolved electron microscopy with atomic spatial and temporal resolution at relatively large average currents. In order to demonstrate this, a cavity has been inserted in a transmission electron microscope, and picosecond pulses have been created. No significant increase of either emittance or energy spread has been measured for these pulses. At a peak current of 814 ± 2 pA, the root-mean-square transverse normalized emittance of the electron pulses is ɛ n,x =(2.7±0.1)·10 -12  m rad in the direction parallel to the streak of the cavity, and ɛ n,y =(2.5±0.1)·10 -12  m rad in the perpendicular direction for pulses with a pulse length of 1.1-1.3 ps. Under the same conditions, the emittance of the continuous beam is ɛ n,x =ɛ n,y =(2.5±0.1)·10 -12  m rad. Furthermore, for both the pulsed and the continuous beam a full width at half maximum energy spread of 0.95 ± 0.05 eV has been measured. Copyright © 2018 Elsevier B.V. All rights reserved.

Parametric emittance measurements of electron beams produced by a laser plasma accelerator

NASA Astrophysics Data System (ADS)

Barber, S. K.; van Tilborg, J.; Schroeder, C. B.; Lehe, R.; Tsai, H.-E.; Swanson, K. K.; Steinke, S.; Nakamura, K.; Geddes, C. G. R.; Benedetti, C.; Esarey, E.; Leemans, W. P.

2018-05-01

Laser plasma accelerators (LPA) offer an exciting possibility to deliver high energy, high brightness electrons beams in drastically smaller distance scales than is typical for conventional accelerators. As such, LPAs draw considerable attention as potential drivers for next generation light sources and for a compact linear collider. In order to asses the viability of an LPA source for a particular application, the brightness of the source should be properly characterized. In this paper, we present charge dependent transverse emittance measurements of LPA sources using both ionization injection and shock induced density down ramp injection, with the latter delivering smaller transverse emittances by a factor of two when controlling for charge density. The single shot emittance method is described in detail with a discussion on limitations related to second order transport effects. The direct role of space charge is explored through a series of simulations and found to be consistent with experimental observations.

Preliminary results on the conversion of laser energy into electricity

NASA Technical Reports Server (NTRS)

Thompson, R. W.; Manista, E. J.; Alger, D. L.

1978-01-01

A preliminary experiment was performed to investigate conversion of 10.6 micron laser energy to electrical energy via a laser-sustained argon plasma. Short-circuit currents of 0.7 A were measured between a thoriated-tungsten emitter and collector electrodes immersed in the laser-sustained argon plasma. Open-circuit voltages of about 1.5 V were inferred from the current-voltage load characteristics. The dominant mechanism of laser energy conversion is uncertain at this time. Much higher output powers appear possible.

Near-Field Thermal Radiation for Solar Thermophotovoltaics and High Temperature Thermal Logic and Memory Applications

NASA Astrophysics Data System (ADS)

Elzouka, Mahmoud

This dissertation investigates Near-Field Thermal Radiation (NFTR) applied to MEMS-based concentrated solar thermophotovoltaics (STPV) energy conversion and thermal memory and logics. NFTR is the exchange of thermal radiation energy at nano/microscale; when separation between the hot and cold objects is less than dominant radiation wavelength (˜1 mum). NFTR is particularly of interest to the above applications due to its high rate of energy transfer, exceeding the blackbody limit by orders of magnitude, and its strong dependence on separation gap size, surface nano/microstructure and material properties. Concentrated STPV system converts solar radiation to electricity using heat as an intermediary through a thermally coupled absorber/emitter, which causes STPV to have one of the highest solar-to-electricity conversion efficiency limits (85.4%). Modeling of a near-field concentrated STPV microsystem is carried out to investigate the use of STPV based solid-state energy conversion as high power density MEMS power generator. Numerical results for In 0.18Ga0.82Sb PV cell illuminated with tungsten emitter showed significant enhancement in energy transfer, resulting in output power densities as high as 60 W/cm2; 30 times higher than the equivalent far-field power density. On thermal computing, this dissertation demonstrates near-field heat transfer enabled high temperature NanoThermoMechanical memory and logics. Unlike electronics, NanoThermoMechanical memory and logic devices use heat instead of electricity to record and process data; hence they can operate in harsh environments where electronics typically fail. NanoThermoMechanical devices achieve memory and thermal rectification functions through the coupling of near-field thermal radiation and thermal expansion in microstructures, resulting in nonlinear heat transfer between two temperature terminals. Numerical modeling of a conceptual NanoThermoMechanical is carried out; results include the dynamic response under write/read cycles for a practical silicon-based device. NanoThermoMechanical rectification is achieved experimentally--for the first time--with measurements at a high temperature of 600 K, demonstrating the feasibility of NanoThermoMechanical to operate in harsh environments. The proof-of-concept device has shown a maximum rectification of 10.9%. This dissertation proposes using meshed photonic crystal structures to enhance NFTR between surfaces. Numerical results show thermal rectification as high as 2500%. Incorporating these structures in thermal memory and rectification devices will significantly enhance their functionality and performance.

Spindt cold cathode electron gun development program

NASA Technical Reports Server (NTRS)

Spindt, C. A.

1983-01-01

A thin film field emission cathode array and an electron gun based on this emitter array are summarized. Fabricating state of the art cathodes for testing at NASA and NRL, advancing the fabrication technology, developing wedge shaped emitters, and performing emission tests are covered. An anistropic dry etching process (reactive ion beam etching) developed that leads to increasing the packing density of the emitter tips to about 5 x 10 to the 6th power/square cm. Tests with small arrays of emitter tips having about 10 tips has demonstrated current densities of over 100 A/sq cm. Several times using cathodes having a packing density of 1.25 x 10 to the 6th power tips/sq cm. Indications are that the higher packing density achievable with the dry etch process may extend this capability to the 500 A/sq cm range and beyond. The wedge emitter geometry was developed and shown to produce emission. This geometry can (in principle) extend the current density capability of the cathodes beyond the 500 A/sq cm level. An emission microscope was built and tested for use with the cathodes.

Design and Development of Emittance Measurement Device by Using the Pepper-pot Technique

NASA Astrophysics Data System (ADS)

Pakluea, S.; Rimjaem, S.

2017-09-01

Transverse emittance of a charged particle beam is one of the most important properties that reveals the quality of the beam. It is related to charge density, transvers size and angular displacement of the beam in transverse phase space. There are several techniques to measure the transverse emittance value. One of practical methods is the pepper-pot technique, which can measure both horizontal and vertical emittance value in a single measurement. This research concentrates on development of a pepper-pot device to measure the transverse emittance of electron beam produced from an accelerator injector system, which consists of a thermionic cathode RF electron gun and an alpha magnet, at the Plasma and Beam Physics Research Facility, Chiang Mai University. Simulation of beam dynamics was conducted with programs PARMELA, ELEGANT and self-developed codes using C and MATLAB. The geometry, dimensions and location of the pepper-pot as well as its corresponding screen station position were included in the simulation. The result from this study will be used to design and develop a practical pepper-pot experimental station.

Beam Dynamics Simulation of Photocathode RF Electron Gun at the PBP-CMU Linac Laboratory

NASA Astrophysics Data System (ADS)

Buakor, K.; Rimjaem, S.

2017-09-01

Photocathode radio-frequency (RF) electron guns are widely used at many particle accelerator laboratories due to high quality of produced electron beams. By using a short-pulse laser to induce the photoemission process, the electrons are emitted with low energy spread. Moreover, the photocathode RF guns are not suffered from the electron back bombardment effect, which can cause the limited electron current and accelerated energy. In this research, we aim to develop the photocathode RF gun for the linac-based THz radiation source. Its design is based on the existing gun at the PBP-CMU Linac Laboratory. The gun consists of a one and a half cell S-band standing-wave RF cavities with a maximum electric field of about 60 MV/m at the centre of the full cell. We study the beam dynamics of electrons traveling through the electromagnetic field inside the RF gun by using the particle tracking program ASTRA. The laser properties i.e. transverse size and injecting phase are optimized to obtain low transverse emittance. In addition, the solenoid magnet is applied for beam focusing and emittance compensation. The proper solenoid magnetic field is then investigated to find the optimum value for proper emittance conservation condition.

Thermophotovoltaic Energy Conversion Development Program

NASA Technical Reports Server (NTRS)

Shukla, Kailash; Doyle, Edward; Becker, Frederick

1998-01-01

Completely integrated thermophotovoltaic (TPV) power sources in the range of 100 to 500 watts are being developed. The technical approach taken in this project focuses on optimizing the integrated performance of the primary subsystems in order to yield high energy conversion efficiency and cost effectiveness. An important aspect of the approach is the use of a narrow band fibrous emitter radiating to a bandgap matched photovoltaic array to minimize thermal and optical recuperation requirements, as well as the non-recoverable heat losses. For the prototype system, fibrous ytterbia emitters radiating in a narrow band centered at 980 nm are matched with high efficiency silicon photoconverters. The integrated system includes a dielectric stack filter for optical energy recovery and a ceramic recuperator for thermal energy recovery. The prototype TPV system uses a rapid mix distributed fuel delivery system with controlled feeding of the fuel and heated air into a flame at the surface of the emitter. This makes it possible to operate at air preheat temperatures well above the auto-ignition temperature of the fuel thereby substantially increasing the system efficiency. The system has been operated with air preheat temperatures up to 1367 K and has produced a uniform narrow band radiation over the surface of the emitter with this approach. The design of the system is described and test data for the system and some of the key components are presented. The results from a system model, which show the impact of various parameters on system performance, are also discussed.

Viability of Using Diamond Field Emitter Array Cathodes in Free Electron Lasers

DTIC Science & Technology

2010-06-01

essential component of a field emitter array is the shape of the electric field lines and equipotential lines at the surface of the array. The...BARRIER AND QUANTUM TUNNELING ...........25 B. FIELD ENHANCEMENT AND SURFACE PROTRUSIONS .........26 C. ELECTRIC FIELDS AND ELECTRON TRAVEL...26 Figure 4. Diagram of a protrusion (triangular in shape) from the surface of a cathode. The protrusion is of height h, with a

Emittance measurements of the CLIO electron beam

NASA Astrophysics Data System (ADS)

Chaput, R.; Devanz, G.; Joly, P.; Kergosien, B.; Lesrel, J.

1997-02-01

We have designed a setup to measure the transverse emittance at the CLIO accelerator exit, based on the "3 gradients" method. The beam transverse size is measured simply by scanning it with a steering coil across a fixed jaw and recording the transmitted current, at various quadrupole strengths. A code then performs a complete calculation of the emittance using the transfer matrix of the quadrupole instead of the usual classical lens approximation. We have studied the influence of various parameters on the emittance: Magnetic field on the e-gun and the peak current. We have also improved a little the emittance by replacing a mismatched pipe between the buncher and accelerating section to avoid wake-field effects; The resulting improvements of the emittance have led to an increase in the FEL emitted power.

Pulsed hybrid field emitter

DOEpatents

Sampayan, Stephen E.

1998-01-01

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays.

Pulsed hybrid field emitter

DOEpatents

Sampayan, S.E.

1998-03-03

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays. 11 figs.

Emittance measurements in low energy ion storage rings

NASA Astrophysics Data System (ADS)

Hunt, J. R.; Carli, C.; Resta-López, J.; Welsch, C. P.

2018-07-01

The development of the next generation of ultra-low energy antiproton and ion facilities requires precise information about the beam emittance to guarantee optimum performance. In the Extra-Low ENergy Antiproton storage ring (ELENA) the transverse emittances will be measured by scraping. However, this diagnostic measurement faces several challenges: non-zero dispersion, non-Gaussian beam distributions due to effects of the electron cooler and various systematic errors such as closed orbit offsets and inaccurate rms momentum spread estimation. In addition, diffusion processes, such as intra-beam scattering might lead to emittance overestimates. Here, we present algorithms to efficiently address the emittance reconstruction in presence of the above effects, and present simulation results for the case of ELENA.

Optimize out-of-core thermionic energy conversion for nuclear electric propulsion

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

Current designs for out of core thermionic energy conversion (TEC) to power nuclear electric propulsion (NEP) were evaluated. Approaches to improve out of core TEC are emphasized and probabilities for success are indicated. TEC gains are available with higher emitter temperatures and greater power densities. Good potentialities for accommodating external high temperature, high power density TEC with heat pipe cooled reactors exist.

Excited-state thermionic emission in III-antimonides: Low emittance ultrafast photocathodes

NASA Astrophysics Data System (ADS)

Berger, Joel A.; Rickman, B. L.; Li, T.; Nicholls, A. W.; Andreas Schroeder, W.

2012-11-01

The normalized rms transverse emittance of an electron source is shown to be proportional to √m* , where m* is the effective mass of the state from which the electron is emitted, by direct observation of the transverse momentum distribution for excited-state thermionic emission from two III-V semiconductor photocathodes, GaSb and InSb, together with a control experiment employing two-photon emission from gold. Simulations of the experiment using an extended analytical Gaussian model of electron pulse propagation are in close agreement with the data.

Visible-to-telecom quantum frequency conversion of light from a single quantum emitter.

PubMed

Zaske, Sebastian; Lenhard, Andreas; Keßler, Christian A; Kettler, Jan; Hepp, Christian; Arend, Carsten; Albrecht, Roland; Schulz, Wolfgang-Michael; Jetter, Michael; Michler, Peter; Becher, Christoph

2012-10-05

We demonstrate efficient (>30%) quantum frequency conversion of visible single photons (711 nm) emitted by a quantum dot to a telecom wavelength (1313 nm). Analysis of the first- and second-order coherence before and after wavelength conversion clearly proves that pivotal properties, such as the coherence time and photon antibunching, are fully conserved during the frequency translation process. Our findings underline the great potential of single photon sources on demand in combination with quantum frequency conversion as a promising technique that may pave the way for a number of new applications in quantum technology.

Sharpening of field emitter tips using high-energy ions

DOEpatents

Musket, Ronald G.

1999-11-30

A process for sharpening arrays of field emitter tips of field emission cathodes, such as found in field-emission, flat-panel video displays. The process uses sputtering by high-energy (more than 30 keV) ions incident along or near the longitudinal axis of the field emitter to sharpen the emitter with a taper from the tip or top of the emitter down to the shank of the emitter. The process is particularly applicable to sharpening tips of emitters having cylindrical or similar (e.g., pyramidal) symmetry. The process will sharpen tips down to radii of less than 12 nm with an included angle of about 20 degrees. Because the ions are incident along or near the longitudinal axis of each emitter, the tips of gated arrays can be sharpened by high-energy ion beams rastered over the arrays using standard ion implantation equipment. While the process is particularly applicable for sharpening of arrays of field emitters in field-emission flat-panel displays, it can be effectively utilized in the fabrication of other vacuum microelectronic devices that rely on field emission of electrons.

Numerical modelling of the CEBAF electron gun with EGUN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Philippe Liger; Geoffrey Krafft

1990-09-10

The electron source used in the injector for the CEBAF accelerator is a Hermosa electron gun with a 2 mm diameter cathode and a control electrode. It produces a 100 keV electron beam to be focused on the first of two apertures which comprise an emittance filter. A normalized emittance of less than {pi} mm mrad at 1.2 mA is set by the requirements of the final beam from the CEBAF linac, since downstream of the filter, a system of two choppers and a third aperture removes 5/6 of the current. In addition, for RF test purposes a higher currentmore » of about 5 mA is needed, possibly at higher emittance. This paper presents a way of calculating the characteristics of the CEBAF electron gun with the gun design code EGUN, and the accuracy of the results is discussed. The transverse shape of the beam delivered by the gun has been observed, and its current measured. A halo around the beam has been seen, and the calculations can reproduce this effect.« less

Design and fabrication of spectrally selective emitter for thermophotovoltaic system by using nano-imprint lithography

NASA Astrophysics Data System (ADS)

Kim, Jong-Moo; Park, Keum-Hwan; Kim, Da-Som; Hwang, Bo-yeon; Kim, Sun-Kyung; Chae, Hee-Man; Ju, Byeong-Kwon; Kim, Young-Seok

2018-01-01

Thermophotovoltaic (TPV) systems have attracted attention as promising power generation systems that can directly convert the radiant energy produced by the combustion of fuel into electrical energy. However, there is a fundamental limit of their conversion efficiency due to the broadband distribution of the radiant spectrum. To overcome this problem, several spectrally selective thermal emitter technologies have been investigated, including the fabrication of photonic crystal (PhC) structures. In this paper, we present some design rules based on finite-a difference time-domain (FDTD) simulation results for tungsten (W) PhC emitter. The W 2D PhC was fabricated by a simple nano-imprint lithography (NIL) process, and inductive coupled plasma reactive ion etching (ICP-RIE) with an isotropic etching process, the benefits and parameters of which are presented. The fabricated W PhC emitter showed spectrally selective emission near the infrared wavelength range, and the optical properties varied depending on the size of the nano-patterns. The measured results of the fabricated prototype structure correspond well to the simulated values. Finally, compared with the performance of a flat W emitter, the total thermal emitter efficiency was almost 3.25 times better with the 2D W PhC structure.

Compact representations of partially coherent undulator radiation suitable for wave propagation

DOE PAGES

Lindberg, Ryan R.; Kim, Kwang -Je

2015-09-28

Undulator radiation is partially coherent in the transverse plane, with the degree of coherence depending on the ratio of the electron beam phase space area (emittance) to the characteristic radiation wavelength λ. Numerical codes used to predict x-ray beam line performance can typically only propagate coherent fields from the source to the image plane. We investigate methods for representing partially coherent undulator radiation using a suitably chosen set of coherent fields that can be used in standard wave propagation codes, and discuss such “coherent mode expansions” for arbitrary degrees of coherence. In the limit when the electron beam emittance alongmore » at least one direction is much larger than λ the coherent modes are orthogonal and therefore compact; when the emittance approaches λ in both planes we discuss an economical method of defining the relevant coherent fields that samples the electron beam phase space using low-discrepancy sequences.« less

Micromachined mold-type double-gated metal field emitters

NASA Astrophysics Data System (ADS)

Lee, Yongjae; Kang, Seokho; Chun, Kukjin

1997-12-01

Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a 0960-1317/7/4/009/img1 diameter extraction gate (or first gate) and a 0960-1317/7/4/009/img2 diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

Multisource inverse-geometry CT. Part II. X-ray source design and prototype

PubMed Central

Neculaes, V. Bogdan; Caiafa, Antonio; Cao, Yang; De Man, Bruno; Edic, Peter M.; Frutschy, Kristopher; Gunturi, Satish; Inzinna, Lou; Reynolds, Joseph; Vermilyea, Mark; Wagner, David; Zhang, Xi; Zou, Yun; Pelc, Norbert J.; Lounsberry, Brian

2016-01-01

Purpose: This paper summarizes the development of a high-power distributed x-ray source, or “multisource,” designed for inverse-geometry computed tomography (CT) applications [see B. De Man et al., “Multisource inverse-geometry CT. Part I. System concept and development,” Med. Phys. 43, 4607–4616 (2016)]. The paper presents the evolution of the source architecture, component design (anode, emitter, beam optics, control electronics, high voltage insulator), and experimental validation. Methods: Dispenser cathode emitters were chosen as electron sources. A modular design was adopted, with eight electron emitters (two rows of four emitters) per module, wherein tungsten targets were brazed onto copper anode blocks—one anode block per module. A specialized ceramic connector provided high voltage standoff capability and cooling oil flow to the anode. A matrix topology and low-noise electronic controls provided switching of the emitters. Results: Four modules (32 x-ray sources in two rows of 16) have been successfully integrated into a single vacuum vessel and operated on an inverse-geometry computed tomography system. Dispenser cathodes provided high beam current (>1000 mA) in pulse mode, and the electrostatic lenses focused the current beam to a small optical focal spot size (0.5 × 1.4 mm). Controlled emitter grid voltage allowed the beam current to be varied for each source, providing the ability to modulate beam current across the fan of the x-ray beam, denoted as a virtual bowtie filter. The custom designed controls achieved x-ray source switching in <1 μs. The cathode-grounded source was operated successfully up to 120 kV. Conclusions: A high-power, distributed x-ray source for inverse-geometry CT applications was successfully designed, fabricated, and operated. Future embodiments may increase the number of spots and utilize fast read out detectors to increase the x-ray flux magnitude further, while still staying within the stationary target inherent thermal limitations. PMID:27487878

Multisource inverse-geometry CT. Part II. X-ray source design and prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neculaes, V. Bogdan, E-mail: neculaes@ge.com; Caia

2016-08-15

Purpose: This paper summarizes the development of a high-power distributed x-ray source, or “multisource,” designed for inverse-geometry computed tomography (CT) applications [see B. De Man et al., “Multisource inverse-geometry CT. Part I. System concept and development,” Med. Phys. 43, 4607–4616 (2016)]. The paper presents the evolution of the source architecture, component design (anode, emitter, beam optics, control electronics, high voltage insulator), and experimental validation. Methods: Dispenser cathode emitters were chosen as electron sources. A modular design was adopted, with eight electron emitters (two rows of four emitters) per module, wherein tungsten targets were brazed onto copper anode blocks—one anode blockmore » per module. A specialized ceramic connector provided high voltage standoff capability and cooling oil flow to the anode. A matrix topology and low-noise electronic controls provided switching of the emitters. Results: Four modules (32 x-ray sources in two rows of 16) have been successfully integrated into a single vacuum vessel and operated on an inverse-geometry computed tomography system. Dispenser cathodes provided high beam current (>1000 mA) in pulse mode, and the electrostatic lenses focused the current beam to a small optical focal spot size (0.5 × 1.4 mm). Controlled emitter grid voltage allowed the beam current to be varied for each source, providing the ability to modulate beam current across the fan of the x-ray beam, denoted as a virtual bowtie filter. The custom designed controls achieved x-ray source switching in <1 μs. The cathode-grounded source was operated successfully up to 120 kV. Conclusions: A high-power, distributed x-ray source for inverse-geometry CT applications was successfully designed, fabricated, and operated. Future embodiments may increase the number of spots and utilize fast read out detectors to increase the x-ray flux magnitude further, while still staying within the stationary target inherent thermal limitations.« less

Optically isolated signal coupler with linear response

DOEpatents

Kronberg, James W.

1994-01-01

An optocoupler for isolating electrical signals that translates an electrical input signal linearly to an electrical output signal. The optocoupler comprises a light emitter, a light receiver, and a light transmitting medium. The light emitter, preferably a blue, silicon carbide LED, is of the type that provides linear, electro-optical conversion of electrical signals within a narrow wavelength range. Correspondingly, the light receiver, which converts light signals to electrical signals and is preferably a cadmium sulfide photoconductor, is linearly responsive to light signals within substantially the same wavelength range as the blue LED.

Direct Observation of Ultralow Vertical Emittance using a Vertical Undulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wootton, Kent

2015-09-17

In recent work, the first quantitative measurements of electron beam vertical emittance using a vertical undulator were presented, with particular emphasis given to ultralow vertical emittances [K. P. Wootton, et al., Phys. Rev. ST Accel. Beams, 17, 112802 (2014)]. Using this apparatus, a geometric vertical emittance of 0.9 ± 0.3 pm rad has been observed. A critical analysis is given of measurement approaches that were attempted, with particular emphasis on systematic and statistical uncertainties. The method used is explained, compared to other techniques and the applicability of these results to other scenarios discussed.

Graphene electron cannon: High-current edge emission from aligned graphene sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jianlong; Li, Nannan; Guo, Jing

2014-01-13

High-current field emitters are made by graphene paper consist of aligned graphene sheets. Field emission luminance pattern shows that their electron beams can be controlled by rolling the graphene paper from sheet to cylinder. These specific electron beams would be useful to vacuum devices and electron beam lithograph. To get high-current emission, the graphene paper is rolled to array and form graphene cannon. Due to aligned emission array, graphene cannon have high emission current. Besides high emission current, the graphene cannon is also tolerable with excellent emission stability. With good field emission properties, these aligned graphene emitters bring application insight.

High-current electron gun with a planar magnetron integrated with an explosive-emission cathode

NASA Astrophysics Data System (ADS)

Kiziridi, P. P.; Ozur, G. E.

2017-05-01

A new high-current electron gun with plasma anode and explosive-emission cathode integrated with planar pulsed powered magnetron is described. Five hundred twelve copper wires 1 mm in diameter and 15 mm in height serve as emitters. These emitters are installed on stainless steel disc (substrate) with 3-mm distance between them. Magnetron discharge plasma provides increased ion density on the periphery of plasma anode formed by high-current Penning discharge ignited within several milliseconds after starting of the magnetron discharge. The increased on the periphery ion density improves the uniformity of high-current electron beam produced in such an electron gun.

Effects of Thermal Exposure on the Optical Properties of LORD Aeroglaze A276

NASA Technical Reports Server (NTRS)

Ellis, David L.; Jaworske, Donald A.

2009-01-01

A lunar outpost will require electrical energy. One potential source is fission surface power where heat from a reactor is converted into electricity utilizing an energy conversion system, and waste heat will need to be rejected from the system. The Second Generation Radiator Demonstration Unit is a technology demonstration unit leading towards operational radiators. To approximate the infrared emittance of the lunar outpost radiators, a low-cost coating compatible with the test conditions was sought. LORD Aeroglaze A276 has a similar emittance, but its performance in air and vacuum at the desired operating temperatures was unknown. This study determined that the emittance remained above 0.86 for all conditions tested and that LORD Aeroglaze A276 is a suitable surrogate coating for the Second Generation Radiator Demonstration Unit.

FUSION WELDING METHOD AND APPARATUS

DOEpatents

Wyman, W.L.; Steinkamp, W.I.

1961-01-17

An apparatus for the fusion welding of metal pieces at a joint is described. The apparatus comprises a highvacuum chamber enclosing the metal pieces and a thermionic filament emitter. Sufficient power is applied to the emitter so that when the electron emission therefrom is focused on the joint it has sufficient energy to melt the metal pieces, ionize the metallic vapor abcve the molten metal, and establish an arc discharge between the joint and the emitter.

Recent advances on organic blue thermally activated delayed fluorescence (TADF) emitters for organic light-emitting diodes (OLEDs)

PubMed Central

Bui, Thanh-Tuân; Goubard, Fabrice; Ibrahim-Ouali, Malika; Gigmes, Didier

2018-01-01

The design of highly emissive and stable blue emitters for organic light emitting diodes (OLEDs) is still a challenge, justifying the intense research activity of the scientific community in this field. Recently, a great deal of interest has been devoted to the elaboration of emitters exhibiting a thermally activated delayed fluorescence (TADF). By a specific molecular design consisting into a minimal overlap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) due to a spatial separation of the electron-donating and the electron-releasing parts, luminescent materials exhibiting small S1–T1 energy splitting could be obtained, enabling to thermally upconvert the electrons from the triplet to the singlet excited states by reverse intersystem crossing (RISC). By harvesting both singlet and triplet excitons for light emission, OLEDs competing and sometimes overcoming the performance of phosphorescence-based OLEDs could be fabricated, justifying the interest for this new family of materials massively popularized by Chihaya Adachi since 2012. In this review, we proposed to focus on the recent advances in the molecular design of blue TADF emitters for OLEDs during the last few years. PMID:29507635

Simple-to-prepare multipoint field emitter

NASA Astrophysics Data System (ADS)

Sominskii, G. G.; Taradaev, E. P.; Tumareva, T. A.; Mishin, M. V.; Kornishin, S. Yu.

2015-07-01

We investigate multitip field emitters prepared by electroerosion treatment of the surface of molybdenum samples. Their characteristics are determined for operation with a protecting activated fullerene coating. Our experiments indicate that such cathodes are promising for high-voltage electron devices operating in technical vacuum.

Silicon Carbide Radioisotope Batteries

NASA Technical Reports Server (NTRS)

Rybicki, George C.

2005-01-01

The substantial radiation resistance and large bandgap of SiC semiconductor materials makes them an attractive candidate for application in a high efficiency, long life radioisotope battery. To evaluate their potential in this application, simulated batteries were constructed using SiC diodes and the alpha particle emitter Americium Am-241 or the beta particle emitter Promethium Pm-147. The Am-241 based battery showed high initial power output and an initial conversion efficiency of approximately 16%, but the power output decayed 52% in 500 hours due to radiation damage. In contrast the Pm-147 based battery showed a similar power output level and an initial conversion efficiency of approximately 0.6%, but no degradation was observed in 500 hours. However, the Pm-147 battery required approximately 1000 times the particle fluence as the Am-242 battery to achieve a similar power output. The advantages and disadvantages of each type of battery and suggestions for future improvements will be discussed.

Emittance of TD-NiCr after simulated reentry

NASA Technical Reports Server (NTRS)

Clark, R. K.; Dicus, D. L.; Lisagor, W. B.

1978-01-01

The effects of simulated reentry heating on the emittance of TD-NiCr were investigated. Groups of specimens with three different preconditioning treatments were exposed to 6, 24, and 30 half-hour simulated reentry exposure cycles in a supersonic arc tunnel at each of three conditions intended to produce surface temperatures of 1255, 1365, and 1475 K. Emittance was determined at 1300 K on specimens which were preconditioned only and specimens after completion of reentry simulation exposure. Oxide morphology and chemistry were studied by scanning electron microscopy and X-ray diffraction analysis. A consistent relationship was established between oxide morphology and total normal emittance. Specimens with coarser textured oxides tended to have lower emittances than specimens with finer textured oxides.

Coupling of Molecular Emitters and Plasmonic Cavities beyond the Point-Dipole Approximation.

PubMed

Neuman, Tomáš; Esteban, Ruben; Casanova, David; García-Vidal, Francisco J; Aizpurua, Javier

2018-04-11

As the size of a molecular emitter becomes comparable to the dimensions of a nearby optical resonator, the standard approach that considers the emitter to be a point-like dipole breaks down. By adoption of a quantum description of the electronic transitions of organic molecular emitters, coupled to a plasmonic electromagnetic field, we are able to accurately calculate the position-dependent coupling strength between a plasmon and an emitter. The spatial distribution of excitonic and photonic quantum states is found to be a key aspect in determining the dynamics of molecular emission in ultrasmall cavities both in the weak and strong coupling regimes. Moreover, we show that the extreme localization of plasmonic fields leads to the selection rule breaking of molecular excitations.

Rare Earth Doped High Temperature Ceramic Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Pal, AnnaMarie; Patton, Martin O.; Jenkins, Phillip P.

1999-01-01

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study develops a spectral emittance model for films of rare earth containing materials. Although there are several possible rare earth doped high temperature materials, this study was confined to rare earth aluminum garnets. Good agreement between experimental and theoretical spectral emittances was found for erbium, thulium and erbium-holmium aluminum garnets. Spectral emittances of these films are sensitive to temperature differences across the film. Emitter efficiency is also a sensitive function of temperature. For thulium aluminum garnet the efficiency is 0.38 at 1700 K but only 0.19 at 1262 K.

Balance the Carrier Mobility To Achieve High Performance Exciplex OLED Using a Triazine-Based Acceptor.

PubMed

Hung, Wen-Yi; Chiang, Pin-Yi; Lin, Shih-Wei; Tang, Wei-Chieh; Chen, Yi-Ting; Liu, Shih-Hung; Chou, Pi-Tai; Hung, Yi-Tzu; Wong, Ken-Tsung

2016-02-01

A star-shaped 1,3,5-triazine/cyano hybrid molecule CN-T2T was designed and synthesized as a new electron acceptor for efficient exciplex-based OLED emitter by mixing with a suitable electron donor (Tris-PCz). The CN-T2T/Tris-PCz exciplex emission shows a high ΦPL of 0.53 and a small ΔET-S = -0.59 kcal/mol, affording intrinsically efficient fluorescence and highly efficient exciton up-conversion. The large energy level offsets between Tris-PCz and CN-T2T and the balanced hole and electron mobility of Tris-PCz and CN-T2T, respectively, ensuring sufficient carrier density accumulated in the interface for efficient generation of exciplex excitons. Employing a facile device structure composed as ITO/4% ReO3:Tris-PCz (60 nm)/Tris-PCz (15 nm)/Tris-PCz:CN-T2T(1:1) (25 nm)/CN-T2T (50 nm)/Liq (0.5 nm)/Al (100 nm), in which the electron-hole capture is efficient without additional carrier injection barrier from donor (or acceptor) molecule and carriers mobilities are balanced in the emitting layer, leads to a highly efficient green exciplex OLED with external quantum efficiency (EQE) of 11.9%. The obtained EQE is 18% higher than that of a comparison device using an exciplex exhibiting a comparable ΦPL (0.50), in which TCTA shows similar energy levels but higher hole mobility as compared with Tris-PCz. Our results clearly indicate the significance of mobility balance in governing the efficiency of exciplex-based OLED. Exploiting the Tris-PCz:CN-T2T exciplex as the host, we further demonstrated highly efficient yellow and red fluorescent OLEDs by doping 1 wt % Rubrene and DCJTB as emitter, achieving high EQE of 6.9 and 9.7%, respectively.

Process for making a cesiated diamond film field emitter and field emitter formed therefrom

DOEpatents

Anderson, D.F.; Kwan, S.W.

1999-03-30

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10{sup {minus}4} Torr and about 10{sup {minus}7} Torr, (b) increasing the vacuum to at least about 10{sup {minus}8} Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters. 2 figs.

Process for making a cesiated diamond film field emitter and field emitter formed therefrom

DOEpatents

Anderson, David F.; Kwan, Simon W.

1999-01-01

A process for making a cesiated diamond film comprises (a) depositing a quantity of cesium iodide on the diamond film in a vacuum of between about 10.sup.-4 Torr and about 10.sup.-7 Torr, (b) increasing the vacuum to at least about 10.sup.-8 Torr, and (c) imposing an electron beam upon the diamond film, said electron beam having an energy sufficient to dissociate said cesium iodide and to incorporate cesium into interstices of the diamond film. The cesiated diamond film prepared according to the process has an operating voltage that is reduced by a factor of at least approximately 2.5 relative to conventional, non-cesiated diamond film field emitters.

ELECTRONIC INTEGRATING CIRCUIT

DOEpatents

Englemann, R.H.

1963-08-20

An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

Rare Earth Garnet Selective Emitter

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

1994-01-01

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional impurities, in the development of solid state laser crystals. Doping, dependent on the particular ion and crystal structure, may be as high as 100 at. % (complete substitution of yttrium ion with the rare earth ion). These materials have high melting points, 1940 C for YAG (Yttrium Aluminum Garnet), and low emissivity in the near infrared making them excellent candidates for a thin film selective emitter. As previously stated, the spectral emittance of a rare earth emitter is characterized by one or more well defined emission bands. Outside the emission band the emittance(absorptance) is much lower. Therefore, it is expected that emission outside the band for a thin film selective emitter will be dominated by the emitter substrate. For an efficient emitter (power in the emission band/total emitted power) the substrate must have low emittance, epsilon(sub S). This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium(Ho) and erbium (Er) doped YAG thin film selective emitters at (1500 K), and compares those results with the theoretical spectral emittance.

Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

DOEpatents

Charache, Greg W.; Baldasaro, Paul F.; Nichols, Greg J.

1998-01-01

A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eV

Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system

DOEpatents

Charache, G.W.; Baldasaro, P.F.; Nichols, G.J.

1998-06-23

A thermophotovoltaic energy conversion device and a method for making the device are disclosed. The device includes a substrate formed from a bulk single crystal material having a bandgap (E{sub g}) of 0.4 eV < E{sub g} < 0.7 eV and an emitter fabricated on the substrate formed from one of a p-type or an n-type material. Another thermophotovoltaic energy conversion device includes a host substrate formed from a bulk single crystal material and lattice-matched ternary or quaternary III-V semiconductor active layers. 12 figs.

Ultra-low emittance electron beam generation using ionization injection in a plasma beatwave accelerator

NASA Astrophysics Data System (ADS)

Schroeder, Carl; Benedetti, Carlo; Esarey, Eric; Leemans, Wim

2017-10-01

Ultra-low emittance beams can be generated using ionization injection of electrons into a wakefield excited by a plasma beatwave accelerator. This all-optical method of electron beam generation uses three laser pulses of different colors. Two long-wavelength laser pulses, with frequency difference equal to the plasma frequency, resonantly drive a plasma wave without fully ionizing a gas. A short-wavelength injection laser pulse (with a small ponderomotive force and large peak electric field), co-propagating and delayed with respect to the beating long-wavelength lasers, ionizes a fraction of the remaining bound electrons at a trapped wake phase, generating an electron beam that is accelerated in the wakefield. Using the beating of long-wavelength pulses to generate the wakefield enables atomically-bound electrons to remain at low ionization potentials, reducing the required amplitude of the ionization pulse, and, hence, the initial transverse momentum and emittance of the injected electrons. An example is presented using two lines of a CO2 laser to form a plasma beatwave accelerator to drive the wake and a frequency-doubled Ti:Al2O3 laser for ionization injection. Supported by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

Miniaturized High-Speed Modulated X-Ray Source

NASA Technical Reports Server (NTRS)

Gendreau, Keith C. (Inventor); Arzoumanian, Zaven (Inventor); Kenyon, Steven J. (Inventor); Spartana, Nick Salvatore (Inventor)

2015-01-01

A miniaturized high-speed modulated X-ray source (MXS) device and a method for rapidly and arbitrarily varying with time the output X-ray photon intensities and energies. The MXS device includes an ultraviolet emitter that emits ultraviolet light, a photocathode operably coupled to the ultraviolet light-emitting diode that emits electrons, an electron multiplier operably coupled to the photocathode that multiplies incident electrons, and an anode operably coupled to the electron multiplier that is configured to produce X-rays. The method for modulating MXS includes modulating an intensity of an ultraviolet emitter to emit ultraviolet light, generating electrons in response to the ultraviolet light, multiplying the electrons to become more electrons, and producing X-rays by an anode that includes a target material configured to produce X-rays in response to impact of the more electrons.

Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maxson, Jared; Bazarov, Ivan; Dunham, Bruce

2014-09-15

A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. Thesemore » results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.« less

The Role of Triplet Exciton Diffusion in Light-Upconverting Polymer Glasses.

PubMed

Raišys, Steponas; Kazlauskas, Karolis; Juršėnas, Saulius; Simon, Yoan C

2016-06-22

Light upconversion (UC) via triplet-triplet annihilation (TTA) by using noncoherent photoexcitation at subsolar irradiance power densities is extremely attractive, particularly for enhanced solar energy harvesting. Unfortunately, practical TTA-UC application is hampered by low UC efficiency of upconverting polymer glasses, which is commonly attributed to poor exciton diffusion of the triplet excitons across emitter molecules. The present study addresses this issue by systematically evaluating triplet exciton diffusion coefficients and diffusion lengths (LD) in a UC model system based on platinum-octaethylporphyrin-sensitized poly(methyl methacrylate)/diphenylanthracene (emitter) films as a function of emitter concentration (15-40 wt %). For this evaluation time-resolved photoluminescence bulk-quenching technique followed by Stern-Volmer-type quenching analysis of experimental data was employed. The key finding is that although increasing emitter concentration in the disordered PMMA/DPA/PtOEP films improves triplet exciton diffusion, and thus LD, this does not result in enhanced UC quantum yield. Conversely, improved LD accompanied by the accelerated decay of UC intensity on millisecond time scale degrades TTA-UC performance at high emitter loadings (>25 wt %) and suggests that diffusion-enhanced nonradiative decay of triplet excitons is the major limiting factor.

Graphene for thermoelectronic solar energy conversion

NASA Astrophysics Data System (ADS)

De, Dilip K.; Olukunle, Olawole C.

2017-08-01

Graphene is a high temperature material which can stand temperature as high as 4600 K in vacuum. Even though its work function is high (4.6 eV) the thermionic emission current density at such temperature is very high. Graphene is a wonderful material whose work function can be engineered as desired. Kwon et al41 reported a chemical approach to reduce work function of graphene using K2CO3, Li2CO3, Rb2CO3, Cs2CO3. The work functions are reported to be 3.7 eV, 3.8 eV, 3.5 eV and 3.4 eV. Even though they did not report the high temperature tolerance of such alkali metal carbonate doped graphene, their works open a great promise for use of pure graphene and doped graphene as emitter (cathode) and collector (anode) in a solar thermionic energy converter. This paper discusses the dynamics of solar energy conversion to electrical energy using thermionic energy converter with graphene as emitter and collector. We have considered parabolic mirror concentrator to focus solar energy onto the emitter to achieve temperature around 4300 K. Our theoretical calculations and the modelling show that efficiency as high as 55% can easily be achieved if space-charge problem can be reduced and the collector can be cooled to certain proper temperature. We have discussed methods of controlling the associated space-charge problems. Richardson-Dushman equation modified by the authors have been used in this modelling. Such solar energy conversion would reduce the dependence on silicon solar panel and has great potential for future applications.

Emissivity Tuned Emitter for RTPV Power Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carl M. Stoots; Robert C. O'Brien; Troy M. Howe

Every mission launched by NASA to the outer planets has produced unexpected results. The Voyager I and II, Galileo, and Cassini missions produced images and collected scientific data that totally revolutionized our understanding of the solar system and the formation of the planetary systems. These missions were enabled by the use of nuclear power. Because of the distances from the Sun, electrical power was produced using the radioactive decay of a plutonium isotope. Radioisotopic Thermoelectric Generators (RTGs) used in the past and currently used Multi-Mission RTGs (MMRTGs) provide power for space missions. Unfortunately, RTGs rely on thermocouples to convert heatmore » to electricity and are inherently inefficient ({approx} 3-7% thermal to electric efficiency). A Radioisotope Thermal Photovoltaic (RTPV) power source has the potential to reduce the specific mass of the onboard power supply by increasing the efficiency of thermal to electric conversion. In an RTPV, a radioisotope heats an emitter, which emits light to a photovoltaic (PV) cell, which converts the light into electricity. Developing an emitter tuned to the desired wavelength of the photovoltaic is a key part in increasing overall performance. Researchers at the NASA Glenn Research Center (GRC) have built a Thermal Photovoltaic (TPV) system, that utilizes a simulated General Purpose Heat Source (GPHS) from a MMRTG to heat a tantalum emitter. The GPHS is a block of graphite roughly 10 cm by 10 cm by 5 cm. A fully loaded GPHS produces 250 w of thermal power and weighs 1.6 kgs. The GRC system relies on the GPHS unit radiating at 1200 K to a tantalum emitter that, in turn, radiates light to a GaInAs photo-voltaic cell. The GRC claims system efficiency of conversion of 15%. The specific mass is around 167 kg/kWe. A RTPV power source that utilized a ceramic or ceramic-metal (cermet) matrix would allow for the combination of the heat source, canister, and emitter into one compact unit, and allow variation in size and shape to optimize temperature and emission spectra.« less

Automated data acquisition and processing for a Hohlraum reflectometer

NASA Technical Reports Server (NTRS)

Difilippo, Frank; Mirtich, Michael J.

1988-01-01

A computer and data acquisition board were used to automate a Perkin-Elmer Model 13 spectrophotometer with a Hohlraum reflectivity attachment. Additional electronic circuitry was necessary for amplification, filtering, and debouncing. The computer was programmed to calculate spectral emittance from 1.7 to 14.7 micrometers and also total emittance versus temperature. Automation of the Hohlraum reflectometer reduced the time required to determine total emittance versus temperature from about three hours to about 40 minutes.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, James Scott; Wanlass, Mark Woodbury; Gessert, Timothy Arthur

1999-01-01

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, J.S.; Wanlass, M.W.; Gessert, T.A.

1999-04-27

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device. 15 figs.

Nanogap near-field thermophotovoltaics.

PubMed

Fiorino, Anthony; Zhu, Linxiao; Thompson, Dakotah; Mittapally, Rohith; Reddy, Pramod; Meyhofer, Edgar

2018-06-18

Conversion of heat to electricity via solid-state devices is of great interest and has led to intense research of thermoelectric materials 1,2 . Alternative approaches for solid-state heat-to-electricity conversion include thermophotovoltaic (TPV) systems where photons from a hot emitter traverse a vacuum gap and are absorbed by a photovoltaic (PV) cell to generate electrical power. In principle, such systems may also achieve higher efficiencies and offer more versatility in use. However, the typical temperature of the hot emitter remains too low (<1,000 K) to achieve a sufficient photon flux to the PV cell, limiting practical applications. Theoretical proposals 3-12 suggest that near-field (NF) effects 13-18 that arise in nanoscale gaps may be leveraged to increase the photon flux to the PV cell and significantly enhance the power output. Here, we describe functional NFTPV devices consisting of a microfabricated system and a custom-built nanopositioner and demonstrate an ~40-fold enhancement in the power output at nominally 60 nm gaps relative to the far field. We systematically characterize this enhancement over a range of gap sizes and emitter temperatures, and for PV cells with two different bandgap energies. We anticipate that this technology, once optimized, will be viable for waste heat recovery applications.

Nanomodulated electron beams via electron diffraction and emittance exchange for coherent x-ray generation

NASA Astrophysics Data System (ADS)

Nanni, E. A.; Graves, W. S.; Moncton, D. E.

2018-01-01

We present a new method for generation of relativistic electron beams with current modulation on the nanometer scale and below. The current modulation is produced by diffracting relativistic electrons in single crystal Si, accelerating the diffracted beam and imaging the crystal structure, then transferring the image into the temporal dimension via emittance exchange. The modulation period can be tuned by adjusting electron optics after diffraction. This tunable longitudinal modulation can have a period as short as a few angstroms, enabling production of coherent hard x-rays from a source based on inverse Compton scattering with total accelerator length of approximately ten meters. Electron beam simulations from cathode emission through diffraction, acceleration, and image formation with variable magnification are presented along with estimates of the coherent x-ray output properties.

Periodic density modulation for quasi-phase-matching of optical frequency conversion is inefficient under shallow focusing and constant ambient pressure.

PubMed

Hadas, Itai; Bahabad, Alon

2016-09-01

The two main mechanisms of a periodic density modulation relevant to nonlinear optical conversion in a gas medium are spatial modulations of the index of refraction and of the number of emitters. For a one-dimensional model neglecting focusing and using a constant ambient pressure, it is shown theoretically and demonstrated numerically that the effects of these two mechanisms during frequency conversion cancel each other exactly. Under the considered conditions, this makes density modulation inefficient for quasi-phase-matching an optical frequency conversion process. This result is particularly relevant for high-order harmonic generation.

Synthesis, photophysical and electrochemical properties of a blue emitter with binaphthalene and carbazole units.

PubMed

Guo, Lixia; Wang, Xiaoju; Feng, Liheng

2018-08-05

A blue emitter, 3,3'-(2,2'-dimethoxy-[1,1'-binaphthalene]-6,6'-diyl)bis(9-benzyl-9H-carbazole), was synthesized by Suzuki coupling reaction. The photophysical properties of the emitter in solution were firstly investigated by UV-Vis absorption and fluorescence emission techniques. The results indicate that the emitter has excellent optical and electron transfer properties. The maximum absorption and emission peaks of the emitter are 302 nm and 406 nm with 67.4% fluorescence quantum yield in chloroform, respectively. Thermal stability study reveals that the emitter has a good thermal stability (Td > 330 °C, Tg > 160 °C). Electrochemical Redox properties of the emitters were measured by cyclic voltammetry, and the energy gaps of highest occupied molecular orbital and the lowest unoccupied molecular orbital levels are in good agreement with the results of theoretical calculation. Furthermore, the multilayer electrochemcial device with the emitter was fabricated and its properties were explored. The wavelength of electroluminescence for the device with this emitter locates at 428 nm. These results indicate the emitter as a deep blue-emitting material has promising application in organic light-emitting diode devices. Copyright © 2018 Elsevier B.V. All rights reserved.

Emittance Growth in the DARHT-II Linear Induction Accelerator

NASA Astrophysics Data System (ADS)

Ekdahl, Carl; Carlson, Carl A.; Frayer, Daniel K.; McCuistian, B. Trent; Mostrom, Christopher B.; Schulze, Martin E.; Thoma, Carsten H.

2017-11-01

The Dual-Axis Radiographic Hydrotest (DARHT) facility uses bremsstrahlung radiation source spots produced by the focused electron beams from two linear induction accelerators (LIAs) to radiograph large hydrodynamic experiments driven by high explosives. Radiographic resolution is determined by the size of the source spot, and beam emittance is the ultimate limitation to spot size. Some of the possible causes for the emittance growth in the DARHT LIA have been investigated using particle-in-cell (PIC) codes, and are discussed in this article. The results suggest that the most likely source of emittance growth is a mismatch of the beam to the magnetic transport, which can cause beam halo.

Materials characterization of impregnated W and W-Ir cathodes after oxygen poisoning

NASA Astrophysics Data System (ADS)

Polk, James E.; Capece, Angela M.

2015-05-01

Electric thrusters use hollow cathodes as the electron source for generating the plasma discharge and for beam neutralization. These cathodes contain porous tungsten emitters impregnated with BaO material to achieve a lower surface work function and are operated with xenon propellant. Oxygen contaminants in the xenon plasma can poison the emitter surface, resulting in a higher work function and increased operating temperature. This could lead directly to cathode failure by preventing discharge ignition or could accelerate evaporation of the BaO material. Exposures over hundreds of hours to very high levels of oxygen can result in increased temperatures, oxidation of the tungsten substrate, and the formation of surface layers of barium tungstates. In this work, we present results of a cathode test in which impregnated tungsten and tungsten-iridium emitters were operated with 100 ppm of oxygen in the xenon plasma for several hundred hours. The chemical and morphological changes were studied using scanning electron microscopy, energy dispersive spectroscopy, and laser profilometry. The results provide strong evidence that high concentrations of oxygen accelerate the formation of tungstate layers in both types of emitters, a phenomenon not inherent to normal cathode operation. Deposits of pure tungsten were observed on the W-Ir emitter, indicating that tungsten is preferentially removed from the surface and transported in the insert plasma. A W-Ir cathode surface will therefore evolve to a pure W composition, eliminating the work function benefit of W-Ir. However, the W-Ir emitter exhibited less erosion and redeposition at the upstream end than the pure W emitter.

Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.

PubMed

Choi, Sumin; Tran, Toan Trong; Elbadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

2016-11-02

Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.

Localization of Narrowband Single Photon Emitters in Nanodiamonds.

PubMed

Bray, Kerem; Sandstrom, Russell; Elbadawi, Christopher; Fischer, Martin; Schreck, Matthias; Shimoni, Olga; Lobo, Charlene; Toth, Milos; Aharonovich, Igor

2016-03-23

Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bioimaging. However, current understanding of the origin of these emitters is extremely limited. In this work, we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particular, we show that nanocrystals with defects such as twin boundaries and secondary nucleation sites exhibit narrowband emission that is absent from pristine individual nanocrystals grown under the same conditions. Critically, we prove that the narrowband emission lines vanish when extended defects are removed deterministically using highly localized electron beam induced etching. Our results enhance the current understanding of single photon emitters in diamond and are directly relevant to fabrication of novel quantum optics devices and sensors.

Free Electron Laser Analysis For the Innovative Navy Prototype

DTIC Science & Technology

2008-03-01

important measure of electron beam quality is transverse emittance, which is the product of the RMS width and the angular spread of the beam, as measured...respect to s . This is possible because the electron’s position in s is uniquely defined for any given time by s = vst ≈ ct , therefore d 2 dt 2...Longitudinal emittance (keV ps) 70 dgog Beam energy spread (%) 0.37 dthetax Beam angular spread, x rms (mrad) 0.17 dthetay Beam angular spread, y rms (mrad

Design of ultra-broadband terahertz polymer waveguide emitters for telecom wavelengths using coupled mode theory.

PubMed

Vallejo, Felipe A; Hayden, L Michael

2013-03-11

We use coupled mode theory, adequately incorporating optical losses, to model ultra-broadband terahertz (THz) waveguide emitters (0.1-20 THz) based on difference frequency generation of femtosecond infrared (IR) optical pulses. We apply the model to a generic, symmetric, five-layer, metal/cladding/core waveguide structure using transfer matrix theory. We provide a design strategy for an efficient ultra-broadband THz emitter and apply it to polymer waveguides with a nonlinear core composed of a poled guest-host electro-optic polymer composite and pumped by a pulsed fiber laser system operating at 1567 nm. The predicted bandwidths are greater than 15 THz and we find a high conversion efficiency of 1.2 × 10(-4) W(-1) by balancing both the modal phase-matching and effective mode attenuation.

Thermophotovoltaic energy conversion using photonic bandgap selective emitters

DOEpatents

Gee, James M.; Lin, Shawn-Yu; Fleming, James G.; Moreno, James B.

2003-06-24

A method for thermophotovoltaic generation of electricity comprises heating a metallic photonic crystal to provide selective emission of radiation that is matched to the peak spectral response of a photovoltaic cell that converts the radiation to electricity. The use of a refractory metal, such as tungsten, for the photonic crystal enables high temperature operation for high radiant flux and high dielectric contrast for a full 3D photonic bandgap, preferable for efficient thermophotovoltaic energy conversion.

High-quality beam generation using an RF gun and a 150 MeV microtron

NASA Astrophysics Data System (ADS)

Kuroda, R.; Washio, M.; Kashiwagi, S.; Kobuki, T.; Ben-Zvi, I.; Wang, X. J.; Hori, T.; Sakai, F.; Tsunemi, A.; Urakawa, J.; Hirose, T.

2000-11-01

Low-emittance sub-picosecond electron pulses are expected to be used in a wide field, such as free electron laser, laser acceleration, femtosecond X-ray generation by Inverse Compton scattering, pulse radiolysis, etc. In order to produce the low-emittance sub-picosecond electron pulse, we are developing a compact Racetrack Microtron (RTM) with a new 5 MeV injection system adopting a laser photo cathode RF gun (Washio et al., Seventh China-Japan Bilateral Symposium on Radiation Chemistry, October 28, Cengdu, China, 1996). The operation of RTM has been kept under a steady state of beam loading for long pulse mode so far (Washio et al., J. Surf. Sci. Soc. Jpn. 19 (2) (1998) 23). In earlier work (Washio et al., PAC99, March 31, New York, USA, 1999), we have succeeded in the numerical simulation for the case of single short pulse acceleration. Finally, the modified RTM was demonstrated as a useful accelerator for a picosecond electron pulse generation under a transient state of beam loading. In the simulation, a picosecond electron pulse was accelerated to 149.6 MeV in RTM for the injection of 5 MeV electron bunch with a pulse length of 10 ps (FWHM), a charge of 1 nC per pulse, and an emittance of 3 πmm mrad.

RF Guns for Generation of Polarized Electron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Dowell, D.H.

2005-11-09

Several accelerators, including the SLC, JLAB, Mainz, Bates/MIT, and Bonn have successfully operated for medium and high energy physics experiments using polarized electron beams generated by dc-biased guns employing GaAs photocathodes. Since these guns have all used a bias on the order of 100 kV, the longitudinal emittance of the extracted bunch is rather poor. Downstream rf bunching systems increase the transverse emittance. An rf gun with a GaAs photocathode would eliminate the need for separate rf bunchers, resulting in a simpler injection system. In addition, the thermal emittance of GaAs-type cathodes is significantly lower than for other photocathode materials.more » The environmental requirements for operating activated GaAs photocathodes cannot be met by rf guns as currently designed and operated. These requirements, including limits on vacuum and electron back bombardment, are discussed in some detail. Modifications to actual and proposed rf gun designs that would allow these requirements to be met are presented.« less

Stability of field emission current from porous n-GaAs(110)

NASA Astrophysics Data System (ADS)

Tondare, V. N.; Naddaf, M.; Bhise, A. B.; Bhoraskar, S. V.; Joag, D. S.; Mandale, A. B.; Sainkar, S. R.

2002-02-01

Field electron emission from porous GaAs has been investigated. The emitter was prepared by anodic etching of n-GaAs (110) in 0.1 M HCl solution. The as-etched porous GaAs shows nonlinear Fowler-Nordheim (FN) characteristics, with a low onset voltage. The emitter, after operating for 6 h at the residual gas pressure of 1×10-8 mbar, shows a linear FN characteristics with a relatively high onset voltage and poor field emission current stability as compared to the as-etched emitter. The change in the behavior was attributed to the residual gas ion bombardment during field electron emission. X-ray photoelectron spectroscopic investigations were carried out on as-etched sample and the one which was studied for field emission. The studies indicate that the as-etched surface contains As2O3 and the surface after field electron emission for about 6 h becomes gallium rich. The presence of As2O3 seems to be a desirable feature for the stable field emission current.

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging.

PubMed

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-07-29

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm² through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42-70 kV voltage by digital switching control between emitter and ground electrode.

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging

PubMed Central

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-01-01

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm2 through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42–70 kV voltage by digital switching control between emitter and ground electrode. PMID:28773237

Nanomodulated electron beams via electron diffraction and emittance exchange for coherent x-ray generation

DOE PAGES

Nanni, E. A.; Graves, W. S.; Moncton, D. E.

2018-01-19

We present a new method for generation of relativistic electron beams with current modulation on the nanometer scale and below. The current modulation is produced by diffracting relativistic electrons in single crystal Si, accelerating the diffracted beam and imaging the crystal structure, then transferring the image into the temporal dimension via emittance exchange. The modulation period can be tuned by adjusting electron optics after diffraction. This tunable longitudinal modulation can have a period as short as a few angstroms, enabling production of coherent hard x-rays from a source based on inverse Compton scattering with total accelerator length of approximately tenmore » meters. Electron beam simulations from cathode emission through diffraction, acceleration, and image formation with variable magnification are presented along with estimates of the coherent x-ray output properties.« less

UNDULATOR-BASED LASER WAKEFIELD ACCELERATOR ELECTRON BEAM DIAGNOSTIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M.S.; Fawley, W.M.; Leemans, W. P.

to couple the THUNDER undulator to the LOASIS Lawrence Berkeley National Laboratory (LBNL) laser wakefield accelerator (LWFA). Currently the LWFA has achieved quasi-monoenergetic electron beams with energies up to 1 GeV. These ultra-short, high-peak-current, electron beams are ideal for driving a compact XUV free electron laser (FEL). Understanding the electron beam properties such as the energy spread and emittance is critical for achieving high quality light sources with high brightness. By using an insertion device such as an undulator and observing changes in the spontaneous emission spectrum, the electron beam energy spread and emittance can be measured with high precision.more » The initial experiments will use spontaneous emission from 1.5 m of undulator. Later experiments will use up to 5 m of undulator with a goal of a high gain, XUV FEL.« less

Nanomodulated electron beams via electron diffraction and emittance exchange for coherent x-ray generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nanni, E. A.; Graves, W. S.; Moncton, D. E.

We present a new method for generation of relativistic electron beams with current modulation on the nanometer scale and below. The current modulation is produced by diffracting relativistic electrons in single crystal Si, accelerating the diffracted beam and imaging the crystal structure, then transferring the image into the temporal dimension via emittance exchange. The modulation period can be tuned by adjusting electron optics after diffraction. This tunable longitudinal modulation can have a period as short as a few angstroms, enabling production of coherent hard x-rays from a source based on inverse Compton scattering with total accelerator length of approximately tenmore » meters. Electron beam simulations from cathode emission through diffraction, acceleration, and image formation with variable magnification are presented along with estimates of the coherent x-ray output properties.« less

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

NASA Technical Reports Server (NTRS)

Ponchak, George E. (Technical Monitor); Bhattacharya, Pallab

2003-01-01

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

The effect of plasma density and emitter geometry on space charge limits for field emitter array electron charge emission into a space plasma

NASA Astrophysics Data System (ADS)

Morris, Dave; Gilchrist, Brian; Gallimore, Alec

2001-02-01

Field Emitter Array Cathodes (FEACs) are a new technology being developed for several potential spacecraft electron emission and charge control applications. Instead of a single hot (i.e., high powered) emitter, or a gas dependant plasma contactor, FEAC systems consist of many (hundreds or thousands) of small (micron level) cathode/gate pairs printed on a semiconductor wafer that effect cold field emission at relatively low voltages. Each individual cathode emits only micro-amp level currents, but a functional array is capable of amp/cm2 current densities. It is hoped that thus FEAC offers the possibility of a relatively low-power, simple to integrate, and inexpensive technique for the high level of current emissions that are required for an electrodynamic tether (EDT) propulsion mission. Space charge limits are a significant concern for the EDT application. Vacuum chamber tests and PIC simulations are being performed at the University of Michigan Plasmadynamics and Electric Propulsion Laboratory and Space Physics Research Laboratory to determine the effect of plasma density and emitter geometry on space charge limitations. The results of this work and conclusions to date of how to best mitigate space charge limits will be presented. .

Efficient triplet harvesting of hybrid white organic light-emitting diodes using thermally activated delayed fluorescence green emitter

NASA Astrophysics Data System (ADS)

Lee, Song Eun; Lee, Ho Won; Baek, Hyun Jung; Yun, Tae Jun; Yun, Geum Jae; Kim, Woo Young; Kim, Young Kwan

2016-10-01

Hybrid white organic light-emitting diodes (WOLEDs) were fabricated by applying triplet harvesting (TH) using a green thermally activated delayed fluorescence (TADF) emitter. The triplet exciton of the green TADF emitter can be upconverted to its singlet state. The TH involved energy transfer of triplet exciton from a blue fluorescent emitter to a green TADF and red phosphorescent emitters, where they can decay radiatively. In addition, the triplet exciton of the green TADF emitter was energy transferred to its singlet state for a reverse intersystem crossing by green emission. Enhanced hybrid WOLEDs were demonstrated using an efficient green TADF emitter combined with red phosphorescent and blue fluorescent emitters. Hybrid WOLEDs were fabricated with various hole-electron recombination zones as changing blue emitting layer thicknesses. Among these, hybrid WOLEDs showed a maximum external quantum efficiency of 11.23%, luminous efficiency of 29.20 cd/A, and a power efficiency of 26.21 lm/W. Moreover, the WOLED exhibited electroluminescence spectra with Commission International de L'Éclairage chromaticity of (0.38, 0.36) at 1000 cd/m2 and a color rendering index of 82 at a practical brightness of 20,000 cd/m2.

Cesium-diode performances from the 1963-to-1971 Thermionic Conversion Specialist Conferences

NASA Technical Reports Server (NTRS)

Morris, J. F.

1972-01-01

Indexes and summaries of the conference papers containing cesium-diode results are presented. Lists of converter materials, geometries, conditions, outputs, and lifetimes accompany the references. Simple chemical designations for emitters, collectors, and additives direct the reader to appropriate selections.

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

PubMed

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

Negative ion source

DOEpatents

Delmore, James E.

1987-01-01

A method and apparatus for providing a negative ion source accelerates electrons away from a hot filament electron emitter into a region of crossed electric and magnetic fields arranged in a magnetron configuration. During a portion of the resulting cycloidal path, the electron velocity is reduced below its initial value. The electron accelerates as it leaves the surface at a rate of only slightly less than if there were no magnetic field, thereby preventing a charge buildup at the surface of the emitter. As the electron traverses the cycloid, it is decelerated during the second, third, and fourth quadrants, then reeccelerated as it approaches the end of the fourth quadrant to regain its original velocity. The minimum velocity occurs during the fourth quadrant, and corresponds to an electron temperature of 200.degree. to 500.degree. for the electric and magnetic fields commonly encountered in the ion sources of magnetic sector mass spectrometers. An ion source using the above-described thermalized electrons is also disclosed.

Simultaneous fabrication of a microcavity absorber-emitter on a Ni-W alloy film

NASA Astrophysics Data System (ADS)

Nashun; Kagimoto, Masahiro; Iwami, Kentaro; Umeda, Norihiro

2017-10-01

A process for the simultaneous fabrication of microcavity structures on both sides of a film was proposed and demonstrated to develop a free-standing-type integrated absorber-emitter for use in solar thermophotovoltaic power generation systems. The absorber-emitter-integrated film comprised a heat-resistant Ni-W alloy deposited by electroplating. A two-step silicon mould was fabricated using deep reactive-ion etching and electron beam lithography. Cavity arrays with different unit sizes were successfully fabricated on both sides of the film; these arrays are suitable for use as a solar spectrum absorber and an infrared-selective emitter. Their emissivity spectra were characterised through UV-vis-NIR and Fourier transform infrared spectroscopy.

A digital miniature x-ray tube with a high-density triode carbon nanotube field emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul

2013-01-14

We have fabricated a digital miniature x-ray tube (6 mm in diameter and 32 mm in length) with a high-density triode carbon nanotube (CNT) field emitter for special x-ray applications. The triode CNT emitter was densely formed within a diameter of below 4 mm with the focusing-functional gate. The brazing process enables us to obtain and maintain a desired vacuum level for the reliable electron emission from the CNT emitters after the vacuum packaging. The miniature x-ray tube exhibited a stable and reliable operation over 250 h in a pulse mode at an anode voltage of above 25 kV.

Emittance Growth in the DARHT-II Linear Induction Accelerator

DOE PAGES

Ekdahl, Carl; Carlson, Carl A.; Frayer, Daniel K.; ...

2017-10-03

The dual-axis radiographic hydrodynamic test (DARHT) facility uses bremsstrahlung radiation source spots produced by the focused electron beams from two linear induction accelerators (LIAs) to radiograph large hydrodynamic experiments driven by high explosives. Radiographic resolution is determined by the size of the source spot, and beam emittance is the ultimate limitation to spot size. On the DARHT-II LIA, we measure an emittance higher than predicted by theoretical simulations, and even though this accelerator produces submillimeter source spots, we are exploring ways to improve the emittance. Some of the possible causes for the discrepancy have been investigated using particle-in-cell codes. Finally,more » the simulations establish that the most likely source of emittance growth is a mismatch of the beam to the magnetic transport, which can cause beam halo.« less

Emittance Growth in the DARHT-II Linear Induction Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, Carl; Carlson, Carl A.; Frayer, Daniel K.

The dual-axis radiographic hydrodynamic test (DARHT) facility uses bremsstrahlung radiation source spots produced by the focused electron beams from two linear induction accelerators (LIAs) to radiograph large hydrodynamic experiments driven by high explosives. Radiographic resolution is determined by the size of the source spot, and beam emittance is the ultimate limitation to spot size. On the DARHT-II LIA, we measure an emittance higher than predicted by theoretical simulations, and even though this accelerator produces submillimeter source spots, we are exploring ways to improve the emittance. Some of the possible causes for the discrepancy have been investigated using particle-in-cell codes. Finally,more » the simulations establish that the most likely source of emittance growth is a mismatch of the beam to the magnetic transport, which can cause beam halo.« less

a High-Precision Branching-Ratio Measurement for the Superallowed β+ Emitter 74Rb

NASA Astrophysics Data System (ADS)

Dunlop, R.; Chagnon-Lessard, S.; Finlay, P.; Garrett, P. E.; Hadinia, B.; Leach, K. G.; Svensson, C. E.; Wong, J.; Ball, G.; Garnsworthy, A. B.; Glister, J.; Hackman, G.; Tardiff, E. R.; Triambak, S.; Williams, S. J.; Leslie, J. R.; Andreoiu, C.; Chester, A.; Cross, D.; Starosta, K.; Yates, S. W.; Zganjar, E. F.

2013-03-01

Precision measurements of superallowed Fermi beta decay allow for tests of the Cabibbo-Kobayashi-Maskawa matrix (CKM) unitarity, the conserved vector current hypothesis, and the magnitude of isospin-symmetry-breaking effects in nuclei. A high-precision measurement of the branching ratio for the β+ decay of 74Rb has been performed at the Isotope Separator and ACcelerator (ISAC) facility at TRIUMF. The 8π spectrometer, an array of 20 close-packed HPGe detectors, was used to detect gamma rays emitted following the decay of 74Rb. PACES, an array of 5 Si(Li) detectors, was used to detect emitted conversion electrons, while SCEPTAR, an array of plastic scintillators, was used to detect emitted beta particles. A total of 51γ rays have been identified following the decay of 21 excited states in the daughter nucleus 74Kr.

Optimization of a near-field thermophotovoltaic system operating at low temperature and large vacuum gap

NASA Astrophysics Data System (ADS)

Lim, Mikyung; Song, Jaeman; Kim, Jihoon; Lee, Seung S.; Lee, Ikjin; Lee, Bong Jae

2018-05-01

The present work successfully achieves a strong enhancement in performance of a near-field thermophotovoltaic (TPV) system operating at low temperature and large-vacuum-gap width by introducing a hyperbolic-metamaterial (HMM) emitter, multilayered graphene, and an Au-backside reflector. Design variables for the HMM emitter and the multilayered-graphene-covered TPV cell are optimized for maximizing the power output of the near-field TPV system with the genetic algorithm. The near-field TPV system with the optimized configuration results in 24.2 times of enhancement in power output compared with that of the system with a bulk emitter and a bare TPV cell. Through the analysis of the radiative heat transfer together with surface-plasmon-polariton (SPP) dispersion curves, it is found that coupling of SPPs generated from both the HMM emitter and the multilayered-graphene-covered TPV cell plays a key role in a substantial increase in the heat transfer even at a 200-nm vacuum gap. Further, the backside reflector at the bottom of the TPV cell significantly increases not only the conversion efficiency, but also the power output by generating additional polariton modes which can be readily coupled with the existing SPPs of the HMM emitter and the multilayered-graphene-covered TPV cell.

Bi-alkali antimonide photocathode growth: An X-ray diffraction study

DOE PAGES

Schubert, Susanne; Wong, Jared; Feng, Jun; ...

2016-07-21

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-raymore » diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K 2 CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.« less

Plasma characteristics in the discharge region of a 20 A emission current hollow cathode

NASA Astrophysics Data System (ADS)

Mingming, SUN; Tianping, ZHANG; Xiaodong, WEN; Weilong, GUO; Jiayao, SONG

2018-02-01

Numerical calculation and fluid simulation methods were used to obtain the plasma characteristics in the discharge region of the LIPS-300 ion thruster’s 20 A emission current hollow cathode and to verify the structural design of the emitter. The results of the two methods indicated that the highest plasma density and electron temperature, which improved significantly in the orifice region, were located in the discharge region of the hollow cathode. The magnitude of plasma density was about 1021 m-3 in the emitter and orifice regions, as obtained by numerical calculations, but decreased exponentially in the plume region with the distance from the orifice exit. Meanwhile, compared to the emitter region, the electron temperature and current improved by about 36% in the orifice region. The hollow cathode performance test results were in good agreement with the numerical calculation results, which proved that that the structural design of the emitter and the orifice met the requirements of a 20 A emission current. The numerical calculation method can be used to estimate plasma characteristics in the preliminary design stage of hollow cathodes.

New Molecular Design Concurrently Providing Superior Pure Blue, Thermally Activated Delayed Fluorescence and Optical Out-Coupling Efficiencies.

PubMed

Rajamalli, P; Senthilkumar, N; Huang, P-Y; Ren-Wu, C-C; Lin, H-W; Cheng, C-H

2017-08-16

Simultaneous enhancement of out-coupling efficiency, internal quantum efficiency, and color purity in thermally activated delayed fluorescence (TADF) emitters is highly desired for the practical application of these materials. We designed and synthesized two isomeric TADF emitters, 2DPyM-mDTC and 3DPyM-pDTC, based on di(pyridinyl)methanone (DPyM) cores as the new electron-accepting units and di(tert-butyl)carbazole (DTC) as the electron-donating units. 3DPyM-pDTC, which is structurally nearly planar with a very small ΔE ST , shows higher color purity, horizontal ratio, and quantum yield than 2DPyM-mDTC, which has a more flexible structure. An electroluminescence device based on 3DPyM-pDTC as the dopant emitter can reach an extremely high external quantum efficiency of 31.9% with a pure blue emission. This work also demonstrates a way to design materials with a high portion of horizontal molecular orientation to realize a highly efficient pure-blue device based on TADF emitters.

A universal formula for the field enhancement factor

NASA Astrophysics Data System (ADS)

Biswas, Debabrata

2018-04-01

The field enhancement factor (FEF) is an important quantity in field emission calculations since the tunneling electron current depends very sensitively on its magnitude. The exact dependence of FEF on the emitter height h, the radius of curvature at the apex Ra, as well as the shape of the emitter base are still largely unknown. In this work, a universal formula for the field enhancement factor is derived for a single emitter. It depends on the ratio h/Ra and has the form γ a = ( 2 h / R a ) / [ α 1 ln ( 4 h / R a ) - α 2 ] , where α1 and α2 depend on the charge distribution on the emitter. Numerical results show that a simpler form γ a = ( 2 h / R a ) / [ ln ( 4 h / R a ) - α ] is equally valid with α depending on the emitter-base. Thus, for the hyperboloid, conical, and ellipsoid emitters, the value of α is 0, 0.88, and 2, while for the cylindrical base, α ≃ 2.6.

Photosensitivity of p-type black Si field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mingels, S., E-mail: smingels@uni-wuppertal.de; Porshyn, V.; Lützenkirchen-Hecht, D.

We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitivemore » voltage drop across the emitters as well as hints for hot electron emission.« less

Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes.

PubMed

Berry, C W; Wang, N; Hashemi, M R; Unlu, M; Jarrahi, M

2013-01-01

Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by attributes of existing terahertz optoelectronics. Here we demonstrate that the use of plasmonic contact electrodes can significantly mitigate the low-quantum efficiency performance of photoconductive terahertz optoelectronics. The use of plasmonic contact electrodes offers nanoscale carrier transport path lengths for the majority of photocarriers, increasing the number of collected photocarriers in a subpicosecond timescale and, thus, enhancing the optical-to-terahertz conversion efficiency of photoconductive terahertz emitters and the detection sensitivity of photoconductive terahertz detectors. We experimentally demonstrate 50 times higher terahertz radiation powers from a plasmonic photoconductive emitter in comparison with a similar photoconductive emitter with non-plasmonic contact electrodes, as well as 30 times higher terahertz detection sensitivities from a plasmonic photoconductive detector in comparison with a similar photoconductive detector with non-plasmonic contact electrodes.

Spatially selective assembly of quantum dot light emitters in an LED using engineered peptides.

PubMed

Demir, Hilmi Volkan; Seker, Urartu Ozgur Safak; Zengin, Gulis; Mutlugun, Evren; Sari, Emre; Tamerler, Candan; Sarikaya, Mehmet

2011-04-26

Semiconductor nanocrystal quantum dots are utilized in numerous applications in nano- and biotechnology. In device applications, where several different material components are involved, quantum dots typically need to be assembled at explicit locations for enhanced functionality. Conventional approaches cannot meet these requirements where assembly of nanocrystals is usually material-nonspecific, thereby limiting the control of their spatial distribution. Here we demonstrate directed self-assembly of quantum dot emitters at material-specific locations in a color-conversion LED containing several material components including a metal, a dielectric, and a semiconductor. We achieve a spatially selective immobilization of quantum dot emitters by using the unique material selectivity characteristics provided by the engineered solid-binding peptides as smart linkers. Peptide-decorated quantum dots exhibited several orders of magnitude higher photoluminescence compared to the control groups, thus, potentially opening up novel ways to advance these photonic platforms in applications ranging from chemical to biodetection.

Design and system integration of the superconducting wiggler magnets for the Compact Linear Collider damping rings

NASA Astrophysics Data System (ADS)

Schoerling, Daniel; Antoniou, Fanouria; Bernhard, Axel; Bragin, Alexey; Karppinen, Mikko; Maccaferri, Remo; Mezentsev, Nikolay; Papaphilippou, Yannis; Peiffer, Peter; Rossmanith, Robert; Rumolo, Giovanni; Russenschuck, Stephan; Vobly, Pavel; Zolotarev, Konstantin

2012-04-01

To achieve high luminosity at the collision point of the Compact Linear Collider (CLIC), the normalized horizontal and vertical emittances of the electron and positron beams must be reduced to 500 and 4 nm before the beams enter the 1.5 TeV linear accelerators. An effective way to accomplish ultralow emittances with only small effects on the electron polarization is using damping rings operating at 2.86 GeV equipped with superconducting wiggler magnets. This paper describes a technical design concept for the CLIC damping wigglers.

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

NASA Astrophysics Data System (ADS)

Coles, R. J.; Price, D. M.; Dixon, J. E.; Royall, B.; Clarke, E.; Kok, P.; Skolnick, M. S.; Fox, A. M.; Makhonin, M. N.

2016-03-01

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95+/-5% and have potential to serve as the basis of spin-logic and network implementations.

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

PubMed Central

Coles, R. J.; Price, D. M.; Dixon, J. E.; Royall, B.; Clarke, E.; Kok, P.; Skolnick, M. S.; Fox, A. M.; Makhonin, M. N.

2016-01-01

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations. PMID:27029961

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer.

PubMed

Coles, R J; Price, D M; Dixon, J E; Royall, B; Clarke, E; Kok, P; Skolnick, M S; Fox, A M; Makhonin, M N

2016-03-31

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations.

Concepts for the material development of phosphorescent organic materials processable from solution and their application in OLEDs

NASA Astrophysics Data System (ADS)

Janietz, S.; Krueger, H.; Thesen, M.; Salert, B.; Wedel, A.

2014-10-01

One example of organic electronics is the application of polymer based light emitting devices (PLEDs). PLEDs are very attractive for large area and fine-pixel displays, lighting and signage. The polymers are more amenable to solution processing by printing techniques which are favourable for low cost production in large areas. With phosphorescent emitters like Ir-complexes higher quantum efficiencies were obtained than with fluorescent systems, especially if multilayer stack systems with separated charge transport and emitting layers were applied in the case of small molecules. Polymers exhibit the ability to integrate all the active components like the hole-, electron-transport and phosphorescent molecules in only one layer. Here, the active components of a phosphorescent system - triplet emitter, hole- and electron transport molecules - can be linked as a side group to a polystyrene main chain. By varying the molecular structures of the side groups as well as the composition of the side chains with respect to the triplet emitter, hole- and electron transport structure, and by blending with suitable glass-forming, so-called small molecules, brightness, efficiency and lifetime of the produced OLEDs can be optimized. By choosing the triplet emitter, such as iridium complexes, different emission colors can be specially set. Different substituted triazine molecules were introduced as side chain into a polystyrene backbone and applied as electron transport material in PLED blend systems. The influence of alkyl chain lengths of the performance will be discussed. For an optimized blend system with a green emitting phosphorescent Ir-complex efficiencies of 60 cd/A and an lifetime improvement of 66.000 h @ 1000 cd/m2 were achieved.

Study of beam transverse properties of a thermionic electron gun for application to a compact THz free electron laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Tongning, E-mail: TongningHu@hust.edu.cn, E-mail: yjpei@ustc.edu.cn; Qin, Bin; Tan, Ping

A novel thermionic electron gun adopted for use in a high power THz free electron laser (FEL) is proposed in this paper. By optimization of the structural and radiofrequency (RF) parameters, the physical design of the gun is performed using dynamic calculations. Velocity bunching is used to minimize the bunch's energy spread, and the dynamic calculation results indicate that high quality beams can be provided. The transverse properties of the beams generated by the gun are also analyzed. The novel RF focusing effects of the resonance cavity are investigated precisely and are used to establish emittance compensation, which enables themore » injector length to be reduced. In addition, the causes of the extrema of the beam radius and the normalized transverse emittance are analyzed and interpreted, respectively, and slice simulations are performed to illustrate how the RF focusing varies along the bunch length and to determine the effects of that variation on the emittance compensation. Finally, by observation of the variations of the beam properties in the drift tube behind the electron gun, prospective assembly scenarios for the complete THz-FEL injector are discussed, and a joint-debugging process for the injector is implemented.« less

Back-junction back-contact n-type silicon solar cell with diffused boron emitter locally blocked by implanted phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Müller, Ralph, E-mail: ralph.mueller@ise.fraunhofer.de; Schrof, Julian; Reichel, Christian

2014-09-08

The highest energy conversion efficiencies in the field of silicon-based photovoltaics have been achieved with back-junction back-contact (BJBC) silicon solar cells by several companies and research groups. One of the most complex parts of this cell structure is the fabrication of the locally doped p- and n-type regions, both on the back side of the solar cell. In this work, we introduce a process sequence based on a synergistic use of ion implantation and furnace diffusion. This sequence enables the formation of all doped regions for a BJBC silicon solar cell in only three processing steps. We observed that implantedmore » phosphorus can block the diffusion of boron atoms into the silicon substrate by nearly three orders of magnitude. Thus, locally implanted phosphorus can be used as an in-situ mask for a subsequent boron diffusion which simultaneously anneals the implanted phosphorus and forms the boron emitter. BJBC silicon solar cells produced with such an easy-to-fabricate process achieved conversion efficiencies of up to 21.7%. An open-circuit voltage of 674 mV and a fill factor of 80.6% prove that there is no significant recombination at the sharp transition between the highly doped emitter and the highly doped back surface field at the device level.« less

Ultrafast Graphene Light Emitters.

PubMed

Kim, Young Duck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Bae, Myung-Ho; Kim, Hyungsik; Seo, Dongjea; Choi, Heon-Jin; Kim, Suk Hyun; Nemilentsau, Andrei; Low, Tony; Tan, Cheng; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Shepard, Kenneth L; Heinz, Tony F; Englund, Dirk; Hone, James

2018-02-14

Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge-carrier dynamics in graphene and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460% enhancement compared to the gray-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2000 K under ambient conditions as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes under electrical excitation. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

Review Of E-Beam Electrical Test Techniques

NASA Astrophysics Data System (ADS)

Hohn, Fritz J.

1987-09-01

Electron beams as a viable technique for contactless testing of electrical functions and electrical integrity of different active devices in VLSI-chips has been demonstrated over the past years. This method of testing electronic networks, most widely used in the laboratory environment, is based on an electron probe which is deflected from point to point in the network. A current of secondary electrons emitted in response to the impingement of the electron probe is converted to a signal indicating the presence of a voltage or varying potential at the different points. Voltage contrast, electron beam induced current, dual potential approach, stroboscopic techniques and other methods have been developed and are used to detect different functional failures in devices. Besides the VLSI application, the contactless testing of three dimensional conductor networks of a 10cm x 10cm x .8cm multilayer ceramic module poses a different and new application for the electron beam test technique. A dual potential electron beam test system allows to generate electron beam induced voltage contrast. The same system at a different potential is used to detect this voltage contrast over the large area without moving the substrate and thus test for the electrical integrity of the networks. Less attention in most of the applications has been paid to the electron optical environment, mostly SEM's were upgraded or converted to do the job of a "voltage contrast" machine. This by no means will satisfy all requirements and more thoughts have to be given to aspects such as: low voltage electron guns: thermal emitter, Schottky emitter, field emitter, low voltage electron optics, two lens systems, different means of detection, signal processing - storage and others. This paper will review available E-beam test techniques, specific applications and some critical components.

Demonstration of cathode emittance dominated high bunch charge beams in a DC gun-based photoinjector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gulliford, Colwyn, E-mail: cg248@cornell.edu; Bartnik, Adam, E-mail: acb20@cornell.edu; Bazarov, Ivan

We present the results of transverse emittance and longitudinal current profile measurements of high bunch charge (≥100 pC) beams produced in the DC gun-based Cornell energy recovery linac photoinjector. In particular, we show that the cathode thermal and core beam emittances dominate the final 95% and core emittances measured at 9–9.5 MeV. Additionally, we demonstrate excellent agreement between optimized 3D space charge simulations and measurement, and show that the quality of the transverse laser distribution limits the optimal simulated and measured emittances. These results, previously thought achievable only with RF guns, demonstrate that DC gun based photoinjectors are capable of deliveringmore » beams with sufficient single bunch charge and beam quality suitable for many current and next generation accelerator projects such as Energy Recovery Linacs and Free Electron Lasers.« less

Emittance studies of the 2.45 GHz permanent magnet ECR ion source

NASA Astrophysics Data System (ADS)

Zelenak, A.; Bogomolov, S. L.; Yazvitsky, N. Yu.

2004-05-01

During the past several years different types of permanent magnet 2.45 GHz (electron cyclotron resonance) ion sources were developed for production of singly charged ions. Ion sources of this type are used in the first stage of DRIBs project, and are planned to be used in the MASHA mass separator. The emittance of the beam provided by the source is one of the important parameters for these applications. An emittance scanner composed from a set of parallel slits and rotary wire beam profile monitor was used for the studying of the beam emittance characteristics. The emittance of helium and argon ion beams was measured with different shapes of the plasma electrode for several ion source parameters: microwave power, source potential, plasma aperture-puller aperture gap distance, gas pressure. The results of measurements are compared with previous simulations of ion optics.

Single-Photon Emitters in Boron Nitride Nanococoons.

PubMed

Ziegler, Joshua; Blaikie, Andrew; Fathalizadeh, Aidin; Miller, David; Yasin, Fehmi S; Williams, Kerisha; Mohrhardt, Jordan; McMorran, Benjamin J; Zettl, Alex; Alemán, Benjamín

2018-04-11

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are attractive for a variety of quantum and photonic technologies because they combine ultra-bright, room-temperature single-photon emission with an atomically thin crystal. However, the emitter's prominence is hindered by large, strain-induced wavelength shifts. We report the discovery of a visible-wavelength, single-photon emitter (SPE) in a zero-dimensional boron nitride allotrope (the boron nitride nanococoon, BNNC) that retains the excellent optical characteristics of few-layer hBN while possessing an emission line variation that is lower by a factor of 5 than the hBN emitter. We determined the emission source to be the nanometer-size BNNC through the cross-correlation of optical confocal microscopy with high-resolution scanning and transmission electron microscopy. Altogether, this discovery enlivens color centers in BN materials and, because of the BN nanococoon's size, opens new and exciting opportunities in nanophotonics, quantum information, biological imaging, and nanoscale sensing.

An integrated microcombustor and photonic crystal emitter for thermophotovoltaics

NASA Astrophysics Data System (ADS)

Chan, Walker R.; Stelmakh, Veronika; Allmon, William R.; Waits, Christopher M.; Soljacic, Marin; Joannopoulos, John D.; Celanovic, Ivan

2016-11-01

Thermophotovoltaic (TPV) energy conversion is appealing for portable millimeter- scale generators because of its simplicity, but it relies on a high temperatures. The performance and reliability of the high-temperature components, a microcombustor and a photonic crystal emitter, has proven challenging because they are subjected to 1000-1200°C and stresses arising from thermal expansion mismatches. In this paper, we adopt the industrial process of diffusion brazing to fabricate an integrated microcombustor and photonic crystal by bonding stacked metal layers. Diffusion brazing is simpler and faster than previous approaches of silicon MEMS and welded metal, and the end result is more robust.

The low-energy β(-) and electron emitter (161)Tb as an alternative to (177)Lu for targeted radionuclide therapy.

PubMed

Lehenberger, Silvia; Barkhausen, Christoph; Cohrs, Susan; Fischer, Eliane; Grünberg, Jürgen; Hohn, Alexander; Köster, Ulli; Schibli, Roger; Türler, Andreas; Zhernosekov, Konstantin

2011-08-01

The low-energy β(-) emitter (161)Tb is very similar to (177)Lu with respect to half-life, beta energy and chemical properties. However, (161)Tb also emits a significant amount of conversion and Auger electrons. Greater therapeutic effect can therefore be expected in comparison to (177)Lu. It also emits low-energy photons that are useful for gamma camera imaging. The (160)Gd(n,γ)(161)Gd→(161)Tb production route was used to produce (161)Tb by neutron irradiation of massive (160)Gd targets (up to 40 mg) in nuclear reactors. A semiautomated procedure based on cation exchange chromatography was developed and applied to isolate no carrier added (n.c.a.) (161)Tb from the bulk of the (160)Gd target and from its stable decay product (161)Dy. (161)Tb was used for radiolabeling DOTA-Tyr3-octreotate; the radiolabeling profile was compared to the commercially available n.c.a. (177)Lu. A (161)Tb Derenzo phantom was imaged using a small-animal single-photon emission computed tomography camera. Up to 15 GBq of (161)Tb was produced by long-term irradiation of Gd targets. Using a cation exchange resin, we obtained 80%-90% of the available (161)Tb with high specific activity, radionuclide and chemical purity and in quantities sufficient for therapeutic applications. The (161)Tb obtained was of the quality required to prepare (161)Tb-DOTA-Tyr3-octreotate. We were able to produce (161)Tb in n.c.a. form by irradiating highly enriched (160)Gd targets; it can be obtained in the quantity and quality required for the preparation of (161)Tb-labeled therapeutic agents. Copyright © 2011 Elsevier Inc. All rights reserved.

Photoelectron linear accelerator for producing a low emittance polarized electron beam

DOEpatents

Yu, David U.; Clendenin, James E.; Kirby, Robert E.

2004-06-01

A photoelectron linear accelerator for producing a low emittance polarized electric beam. The accelerator includes a tube having an inner wall, the inner tube wall being coated by a getter material. A portable, or demountable, cathode plug is mounted within said tube, the surface of said cathode having a semiconductor material formed thereon.

Blue emitting 1,8-naphthalimides with electron transport properties for organic light emitting diode applications

NASA Astrophysics Data System (ADS)

Ulla, Hidayath; Kiran, M. Raveendra; Garudachari, B.; Ahipa, T. N.; Tarafder, Kartick; Adhikari, Airody Vasudeva; Umesh, G.; Satyanarayan, M. N.

2017-09-01

In this article, the synthesis, characterization and use of two novel naphthalimides as electron-transporting emitter materials for organic light emitting diode (OLED) applications are reported. The molecules were obtained by substituting electron donating chloro-phenoxy group at the C-4 position. A detailed optical, thermal, electrochemical and related properties were systematically studied. Furthermore, theoretical calculations (DFT) were performed to get a better understanding of the electronic structures. The synthesized molecules were used as electron transporters and emitters in OLEDs with three different device configurations. The devices with the molecules showed blue emission with efficiencies of 1.89 cdA-1, 0.98 lmW-1, 0.71% at 100 cdm-2. The phosphorescent devices with naphthalimides as electron transport materials displayed better performance in comparison to the device without any electron transporting material and were analogous with the device using standard electron transporting material, Alq3. The results demonstrate that the naphthalimides could play a significant part in the progress of OLEDs.

Electron gun using carbon-nanofiber field emitter.

PubMed

Sakai, Y; Haga, A; Sugita, S; Kita, S; Tanaka, S-I; Okuyama, F; Kobayashi, N

2007-01-01

An electron gun constructed using carbon-nanofiber (CNF) emitters and an electrostatic Einzel lens system has been characterized for the development of a high-resolution x-ray source. The CNFs used were grown on tungsten and palladium tips by plasma-enhanced chemical-vapor deposition. Electron beams with the energies of 10

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

NASA Technical Reports Server (NTRS)

Bhattacharya, Pallab

2001-01-01

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters.

PubMed

Huang, Zhizhen; Huang, Yifeng; Xu, Ningsheng; Chen, Jun; She, Juncong; Deng, Shaozhi

2018-06-13

Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., < 1000 K) is less temperature sensitive due to the weak dependence of free electron density on temperature, while that from p-doped semiconductor emitter is restricted by its limited free electron density. Here, we developed full array of uniform individual p-Si/ZnO nanoemitters and demonstrated the strong thermo-enhanced field emission. The mechanism of forming uniform nanoemitters with well Si/ZnO mechanical joint in the nanotemplates was elucidated. No current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm 2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.

Developments in Turbo-Brayton Power Converters

NASA Astrophysics Data System (ADS)

Zagarola, Mark V.; Crowley, Christopher J.; Swift, Walter L.

2003-01-01

Design studies show that a Brayton cycle power unit is an extremely attractive option for thermal-to-electric power conversion on long-duration, space missions. At low power levels (50 to 100 We), a Brayton system should achieve a conversion efficiency between 20% and 40% depending on the radiative heat sink temperature. The expected mass of the converter for these power levels is about 3 kg. The mass of the complete system consisting of the converter, the electronics, a radiator, and a single general purpose heat source should be about 6 kg. The system is modular and the technology is readily scalable to higher power levels (to greater than 10 kWe) where conversion efficiencies of between 28% and 45% are expected, the exact value depending on sink temperature and power level. During a recently completed project, key physical features of the converter were determined, and key operating characteristics were demonstrated for a system of this size. The key technologies in these converters are derived from those which have been developed and successfully implemented in miniature turbo-Brayton cryogenic refrigerators for space applications. These refrigerators and their components have been demonstrated to meet rigorous requirements for vibration emittance and susceptibility, acoustic susceptibility, electromagnetic interference and susceptibility, environmental cycling, and endurance. Our progress in extending the underlying turbo-Brayton cryocooler technologies to thermal-to-electric power converters is the subject of this paper.

Surface atoms in Sc-O/W(1 0 0) system as Schottky emitter at high temperature

NASA Astrophysics Data System (ADS)

Tsujita, T.; Iida, S.; Nagatomi, T.; Takai, Y.

2003-12-01

The chemical bonding state of surface atoms in the Sc-O/W(1 0 0) system as a Schottky emitter was investigated at high temperature using a profile of Auger electron peaks to elucidate the mechanism of the marked reduction of the work function of the Sc-O/W(1 0 0) Schottky emitter. For this, Sc-deposited W(1 0 0), oxygen-exposed W(1 0 0) and Sc surfaces were prepared as reference surfaces. A comparison of the profiles of the Auger electron peaks from the Sc-O/W(1 0 0) surface with those from the reference surfaces has revealed that oxygen and Sc atoms on the Sc-O/W(1 0 0) surface form the Sc-O complexes at the operating temperature of the Sc-O/W(1 0 0) emitter of 1400 K. In addition, the ratio of the number of Sc atoms to that of oxygen atoms is estimated as 1:1 by the quantitative analysis of the AES peaks. The present results strongly suggest that the work function of the Sc-O/W(1 0 0) emitter is caused by the formation of Sc-O electric dipoles aligning into the p(2 × 1)-p(1 × 2) double-domain structure [Surf. Sci. 523 (2003) L37] on the Sc-O/W(1 0 0) surface at the operating temperature.

Method of depositing multi-layer carbon-based coatings for field emission

DOEpatents

Sullivan, John P.; Friedmann, Thomas A.

1999-01-01

A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

Method of depositing multi-layer carbon-based coatings for field emission

DOEpatents

Sullivan, J.P.; Friedmann, T.A.

1999-08-10

A novel field emitter device is disclosed for cold cathode field emission applications, comprising a multi-layer resistive carbon film. The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced. Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials. 8 figs.

Design of a low emittance and high repetition rate S-band photoinjector

NASA Astrophysics Data System (ADS)

Han, Jang-Hui

2014-09-01

As an electron beam injector of X-ray free-electron lasers (FELs), photoinjectors have been developed for the past few decades. Such an injector starting with a photocathode RF gun provides high brightness beams and therefore it is being adopted as an injector of X-ray FELs. In this paper we show how to improve photoinjector performance in terms of emittance and repetition rates by means of injector components optimization, especially with the gun. Transverse emittance at the end of an injector is reduced by optimizing the gun design, gun solenoid position, and accelerating section position. The repetition rate of an injector mainly depends on the gun. It is discussed that a repetition rate of 1 kHz at a normal-conducting S-band photoinjector is feasible by adopting a coaxial RF coupler and improving cooling-water channels surrounding the gun.

Electron-Beam Dynamics for an Advanced Flash-Radiography Accelerator

DOE PAGES

Ekdahl, Carl

2015-11-17

Beam dynamics issues were assessed for a new linear induction electron accelerator being designed for multipulse flash radiography of large explosively driven hydrodynamic experiments. Special attention was paid to equilibrium beam transport, possible emittance growth, and beam stability. Especially problematic would be high-frequency beam instabilities that could blur individual radiographic source spots, low-frequency beam motion that could cause pulse-to-pulse spot displacement, and emittance growth that could enlarge the source spots. Furthermore, beam physics issues were examined through theoretical analysis and computer simulations, including particle-in-cell codes. Beam instabilities investigated included beam breakup, image displacement, diocotron, parametric envelope, ion hose, and themore » resistive wall instability. The beam corkscrew motion and emittance growth from beam mismatch were also studied. It was concluded that a beam with radiographic quality equivalent to the present accelerators at Los Alamos National Laboratory will result if the same engineering standards and construction details are upheld.« less

Electron-beam dynamics for an advanced flash-radiography accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, Carl August Jr.

2015-06-22

Beam dynamics issues were assessed for a new linear induction electron accelerator. Special attention was paid to equilibrium beam transport, possible emittance growth, and beam stability. Especially problematic would be high-frequency beam instabilities that could blur individual radiographic source spots, low-frequency beam motion that could cause pulse-to-pulse spot displacement, and emittance growth that could enlarge the source spots. Beam physics issues were examined through theoretical analysis and computer simulations, including particle-in cell (PIC) codes. Beam instabilities investigated included beam breakup (BBU), image displacement, diocotron, parametric envelope, ion hose, and the resistive wall instability. Beam corkscrew motion and emittance growth frommore » beam mismatch were also studied. It was concluded that a beam with radiographic quality equivalent to the present accelerators at Los Alamos will result if the same engineering standards and construction details are upheld.« less

Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

2016-10-01

A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

NASA Astrophysics Data System (ADS)

Shimoi, Norihiro

2015-12-01

Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, the blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.

Storage of charge carriers on emitter molecules in organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Weichsel, Caroline; Burtone, Lorenzo; Reineke, Sebastian; Hintschich, Susanne I.; Gather, Malte C.; Leo, Karl; Lüssem, Björn

2012-08-01

Organic light-emitting diodes (OLEDs) using the red phosphorescent emitter iridium(III)bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate) [Ir(MDQ)2(acac)] are studied by time-resolved electroluminescence measurements. A transient overshoot after voltage turn-off is found, which is attributed to electron accumulation on Ir(MDQ)2(acac) molecules. The mechanism is verified via impedance spectroscopy and by application of positive and negative off-voltages. We calculate the density of accumulated electrons and find that it scales linearly with the doping concentration of the emitter. Using thin quenching layers, we locate the position of the emission zone during normal OLED operation and after voltage turn-off. In addition, the transient overshoot is also observed in three-color white-emitting OLEDs. By time- and spectrally resolved measurements using a streak camera, we directly attribute the overshoot to electron accumulation on Ir(MDQ)2(acac). We propose that similar processes are present in many state-of-the-art OLEDs and believe that the quantification of charge carrier storage will help to improve the efficiency of OLEDs.

Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimoi, Norihiro, E-mail: shimoi@mail.kankyo.tohoku.ac.jp

2015-12-07

Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, themore » blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.« less

Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters

NASA Technical Reports Server (NTRS)

Toda, Risaku; Bronikowski, Michael; Luong, Edward; Manohara, Harish

2008-01-01

A continuing effort to develop carbon-nanotube-based field emitters (cold cathodes) as high-current-density electron sources has yielded an optimized device design and a fabrication scheme to implement the design. One major element of the device design is to use a planar array of bundles of carbon nanotubes as the field-emission tips and to optimize the critical dimensions of the array (principally, heights of bundles and distances between them) to obtain high area-averaged current density and high reliability over a long operational lifetime a concept that was discussed in more detail in Arrays of Bundles of Carbon Nanotubes as Field Emitters (NPO-40817), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 58. Another major element of the design is to configure the gate electrodes (anodes used to extract, accelerate, and/or focus electrons) as a ring that overhangs a recess wherein the bundles of nanotubes are located, such that by virtue of the proximity between the ring and the bundles, a relatively low applied potential suffices to generate the large electric field needed for emission of electrons.

Toward high-energy-density, high-efficiency, and moderate-temperature chip-scale thermophotovoltaics

PubMed Central

Chan, Walker R.; Bermel, Peter; Pilawa-Podgurski, Robert C. N.; Marton, Christopher H.; Jensen, Klavs F.; Senkevich, Jay J.; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan

2013-01-01

The challenging problem of ultra-high-energy-density, high-efficiency, and small-scale portable power generation is addressed here using a distinctive thermophotovoltaic energy conversion mechanism and chip-based system design, which we name the microthermophotovoltaic (μTPV) generator. The approach is predicted to be capable of up to 32% efficient heat-to-electricity conversion within a millimeter-scale form factor. Although considerable technological barriers need to be overcome to reach full performance, we have performed a robust experimental demonstration that validates the theoretical framework and the key system components. Even with a much-simplified μTPV system design with theoretical efficiency prediction of 2.7%, we experimentally demonstrate 2.5% efficiency. The μTPV experimental system that was built and tested comprises a silicon propane microcombustor, an integrated high-temperature photonic crystal selective thermal emitter, four 0.55-eV GaInAsSb thermophotovoltaic diodes, and an ultra-high-efficiency maximum power-point tracking power electronics converter. The system was demonstrated to operate up to 800 °C (silicon microcombustor temperature) with an input thermal power of 13.7 W, generating 344 mW of electric power over a 1-cm2 area. PMID:23440220

Electronic Warfare and Radar Systems Engineering Handbook

DTIC Science & Technology

1999-04-01

EWRL Electronic Warfare Reprogrammable ELNOT Emitter Library Notation Library (USN) EM Electromagnetic EWSI EW Systems Integration E-Mail Electronic...ram air turbine (RAT) propellers used to power aircraft pods, helicopter rotor blades, and protruding surfaces of automobile hubcaps will all provide

Enhanced quasi-static particle-in-cell simulation of electron cloud instabilities in circular accelerators

NASA Astrophysics Data System (ADS)

Feng, Bing

Electron cloud instabilities have been observed in many circular accelerators around the world and raised concerns of future accelerators and possible upgrades. In this thesis, the electron cloud instabilities are studied with the quasi-static particle-in-cell (PIC) code QuickPIC. Modeling in three-dimensions the long timescale propagation of beam in electron clouds in circular accelerators requires faster and more efficient simulation codes. Thousands of processors are easily available for parallel computations. However, it is not straightforward to increase the effective speed of the simulation by running the same problem size on an increasingly number of processors because there is a limit to domain size in the decomposition of the two-dimensional part of the code. A pipelining algorithm applied on the fully parallelized particle-in-cell code QuickPIC is implemented to overcome this limit. The pipelining algorithm uses multiple groups of processors and optimizes the job allocation on the processors in parallel computing. With this novel algorithm, it is possible to use on the order of 102 processors, and to expand the scale and the speed of the simulation with QuickPIC by a similar factor. In addition to the efficiency improvement with the pipelining algorithm, the fidelity of QuickPIC is enhanced by adding two physics models, the beam space charge effect and the dispersion effect. Simulation of two specific circular machines is performed with the enhanced QuickPIC. First, the proposed upgrade to the Fermilab Main Injector is studied with an eye upon guiding the design of the upgrade and code validation. Moderate emittance growth is observed for the upgrade of increasing the bunch population by 5 times. But the simulation also shows that increasing the beam energy from 8GeV to 20GeV or above can effectively limit the emittance growth. Then the enhanced QuickPIC is used to simulate the electron cloud effect on electron beam in the Cornell Energy Recovery Linac (ERL) due to extremely small emittance and high peak currents anticipated in the machine. A tune shift is discovered from the simulation; however, emittance growth of the electron beam in electron cloud is not observed for ERL parameters.

Nitride Conversion: A Novel Approach to c-Si Solar Cell Metallization

NASA Astrophysics Data System (ADS)

Hook, David Henry

Metallization of commercial-grade c-Si solar cells is currently accomplished by screen-printing fine lines of a Ag/PbO-glass paste amalgam (Ag-frit) onto the insulating SiNx antireflective coating (ARC) that lies atop the shallow n-type emitter layer of the cell. Upon annealing, the glass etches SiNx and permits the crystallization of Ag near the electrically-active emitter interface, thus contacting the cell. While entirely functional, the contact interface produced by Ag-frit metallization is non-ideal, and Ag metal itself is expensive; its use adds to overall solar cell costs. The following work explores the use of Ti-containing alloys as metallization media for c-Si solar cells. There is a -176 kJ [mol N]--1 free energy change associated with the conversion of Si3N4 to TiN. By combining Ti with a low-melting point metal, this reaction can take place at temperatures as low as 750°C in the bulk. Combinations of Ti with Cu, Sn, Ag, and Pb ternary and binary systems are investigated. On unmetallized, c-Si textured solar cells it is shown that 900 nm of stoichiometric Ti6Sn 5 is capable of converting the SiNx ARC to TiN and Ti5Si3, both of which are conducting materials with electrically low-barriers to contact with n-type Si. Alongside electron microscopy, specific contact resistivity (rho c) measurements are used to determine the interfacial quality of TiN/Ti5Si3 contacts to n-Si. Circular transmission line model (CTLM) measurements are utilized for the characterization of reacted Ag0.05Cu0.69Ti0.26, Sn0.35 Ag0.27Ti0.38, and Ti6Sn5 contacts. rhoc values as low as 26 muOcm 2 are measured for reacted Ti6Sn5-SiN x on conventional c-Si solar cells. This value is approximately 2-3 orders of magnitude lower than rhoc of contacts produced by traditional Ag-frit metallization. Viable 1x1 cm, Ti6Sn5-metallized solar cells on 5x5 cm substrates were fabricated through a collaboration with the Georgia Institute of Technology (GA Tech). Front-side metallization was performed at NCSU; cells were then shipped to GA Tech for rear-side metallization, Ag-plating to increase the metal thickness, and cell isolation. This collaboration produced a 16.9% efficient, Ti6Sn5-metallized cell compared to a 17.4% efficient Ag frit-metallized control cell that had experienced an identical temperature profile. It was found that the annealing profiles associated with conversion-metallization promote H2 desorption from the SiN x ARC and thus negatively affect cell passivation. Strategies exist for decreasing the heat experienced by conversion-metallized cells, doing so would increase the overall efficiency and improve other relevant metrics. Solar industry analysis indicates that c-Si cells will increase in efficiency by switching to high sheet-resistance p-type emitters; there will be a marked need for a contact mechanism with a near-ideal, low barrier-height interfaces to these next-generation layers. SiN x ARC conversion to TiN/Ti5Si3 represents an economical means of achieving low rhoc contact to both n and p-type Si when compared to metallization by Ag frit.

Improved negative ion source

DOEpatents

Delmore, J.E.

1984-05-01

A method and apparatus for providing a negative ion source accelerates electrons away from a hot filament electron emitter into a region of crossed electric and magnetic fields arranged in a magnetron configuration. During a portion of the resulting cycloidal path, the electron velocity is reduced below its initial value. The electron accelerates as it leaves the surface at a rate of only slightly less than if there were no magnetic field, thereby preventing a charge buildup at the surface of the emitter. As the electron traverses the cycloid, it is decelerated during the second, third, and fourth quadrants, then reaccelerated as it approaches the end of the fourth quadrant to regain its original velocity. The minimum velocity occurs during the fourth quadrant, and corresponds to an electron temperature of 200 to 500/sup 0/C for the electric and magnetic fields commonly encountered in the ion sources of magnetic sector mass spectrometers. An ion source using the above-described thermalized electrons is also disclosed.

Diffusion of low-energy electrons in tissue-like liquids.

PubMed

Malamut, C; Paes-Leme, P J; Paschoa, A S

1992-11-01

The spatial-energetic distribution of low-energy electrons was studied for a source located in a liquid medium simulating biological tissue. A time-independent Boltzmann equation was used to model this distribution microscopically. Ionization was treated as a perturbation to a quasi-elastic collision process between the electron and the medium. A diffusion limit was obtained by using a scale parameter, leading to a sequence of recursive partial differential equations whose solutions, associated with a macroscopic scale, were obtained by numerical approximations. As an application, electron ranges were estimated based on these solutions and then compared with values reported in the open literature based on experimental results and on Monte Carlo calculation. Local dosimetry, i.e., the energy imparted to a volume of a sphere with radius equal to the range of low-energy electrons, of low-energy electrons from internal emitters can benefit by the knowledge of the ranges estimated for biological tissue. Auger electron emitters, for example, have been the object of a number of investigations because of their radiobiological significance.

The electric potential of particles in interstellar space released from a nuclear waste payload

NASA Technical Reports Server (NTRS)

Williams, A. C.

1980-01-01

Mechanisms for charging a grain in the interplanetary medium include: (1) capture of solar wind electrons; (2) capture of solar wind protons; (3) ejection of electrons through the photoelectric effect due to the solar radiation; (4) escape of beta particles from beta emitters in the grain; and (5) escape of alpha particles from alpha emitters in the grain. The potentials on both nonradioactive and radioactive grains are considered with relation to particle size and time, and the distance from the Sun. Numerical results are presented where the waste mix is assumed to be PW-4b.

MIRAGE: developments in IRSP systems, RIIC design, emitter fabrication, and performance

NASA Astrophysics Data System (ADS)

Bryant, Paul; Oleson, Jim; James, Jay; McHugh, Steve; Lannon, John; Vellenga, David; Goodwin, Scott; Huffman, Alan; Solomon, Steve; Goldsmith, George C., II

2005-05-01

SBIR's family of MIRAGE infrared scene projection systems is undergoing significant growth and expansion. The first two lots of production IR emitters have completed fabrication at Microelectronics Center of North Carolina/Research and Development Institute (MCNC-RDI), and the next round(s) of emitter production has begun. These latest emitter arrays support programs such as Large Format Resistive Array (LFRA), Optimized Array for Space-based Infrared Simulation (OASIS), MIRAGE 1.5, and MIRAGE II. We present the latest performance data on emitters fabricated at MCNC-RDI, plus integrated system performance on recently completed IRSP systems. Teamed with FLIR Systems/Indigo Operations, SBIR and the Tri-Services IRSP Working Group have completed development of the CMOS Read-In Integrated Circuit (RIIC) portion of the Wide Format Resistive Array (WFRA) program-to extend LFRA performance to a 768 x 1536 "wide screen" projection configuration. WFRA RIIC architecture and performance is presented. Finally, we summarize development of the LFRA Digital Emitter Engine (DEE) and OASIS cryogenic package assemblies, the next-generation Command & Control Electronics (C&CE).

Distinguishing triplet energy transfer and trap-assisted recombination in multi-color organic light-emitting diode with an ultrathin phosphorescent emissive layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xue, Qin, E-mail: xueqin19851202@163.com; Liu, Shouyin; Xie, Guohua

2014-03-21

An ultrathin layer of deep-red phosphorescent emitter tris(1-phenylisoquinoline) iridium (III) (Ir(piq){sub 3}) is inserted within different positions of the electron blocking layer fac-tris (1-phenylpyrazolato-N,C{sup 2′})-iridium(III) (Ir(ppz){sub 3}) to distinguish the contribution of the emission from the triplet exciton energy transfer/diffusion from the adjacent blue phosphorescent emitter and the trap-assisted recombination from the narrow band-gap emitter itself. The charge trapping effect of the narrow band-gap deep-red emitter which forms a quantum-well-like structure also plays a role in shaping the electroluminescent characteristics of multi-color organic light-emitting diodes. By accurately controlling the position of the ultrathin sensing layer, it is considerably easy tomore » balance the white emission which is quite challenging for full-color devices with multiple emission zones. There is nearly no energy transfer detectable if 7 nm thick Ir(ppz){sub 3} is inserted between the blue phosphorescent emitter and the ultrathin red emitter.« less

'Squeezing' near-field thermal emission for ultra-efficient high-power thermophotovoltaic conversion.

PubMed

Karalis, Aristeidis; Joannopoulos, J D

2016-07-01

We numerically demonstrate near-field planar ThermoPhotoVoltaic systems with very high efficiency and output power, at large vacuum gaps. Example performances include: at 1200 °K emitter temperature, output power density 2 W/cm(2) with ~47% efficiency at 300 nm vacuum gap; at 2100 °K, 24 W/cm(2) with ~57% efficiency at 200 nm gap; and, at 3000 °K, 115 W/cm(2) with ~61% efficiency at 140 nm gap. Key to this striking performance is a novel photonic design forcing the emitter and cell single modes to cros resonantly couple and impedance-match just above the semiconductor bandgap, creating there a 'squeezed' narrowband near-field emission spectrum. Specifically, we employ surface-plasmon-polariton thermal emitters and silver-backed semiconductor-thin-film photovoltaic cells. The emitter planar plasmonic nature allows for high-power and stable high-temperature operation. Our simulations include modeling of free-carrier absorption in both cell electrodes and temperature dependence of the emitter properties. At high temperatures, the efficiency enhancement via resonant mode cross-coupling and matching can be extended to even higher power, by appropriately patterning the silver back electrode to enforce also an absorber effective surface-plasmon-polariton mode. Our proposed designs can therefore lead the way for mass-producible and low-cost ThermoPhotoVoltaic micro-generators and solar cells.

‘Squeezing’ near-field thermal emission for ultra-efficient high-power thermophotovoltaic conversion

PubMed Central

Karalis, Aristeidis; Joannopoulos, J. D.

2016-01-01

We numerically demonstrate near-field planar ThermoPhotoVoltaic systems with very high efficiency and output power, at large vacuum gaps. Example performances include: at 1200 °K emitter temperature, output power density 2 W/cm2 with ~47% efficiency at 300 nm vacuum gap; at 2100 °K, 24 W/cm2 with ~57% efficiency at 200 nm gap; and, at 3000 °K, 115 W/cm2 with ~61% efficiency at 140 nm gap. Key to this striking performance is a novel photonic design forcing the emitter and cell single modes to cros resonantly couple and impedance-match just above the semiconductor bandgap, creating there a ‘squeezed’ narrowband near-field emission spectrum. Specifically, we employ surface-plasmon-polariton thermal emitters and silver-backed semiconductor-thin-film photovoltaic cells. The emitter planar plasmonic nature allows for high-power and stable high-temperature operation. Our simulations include modeling of free-carrier absorption in both cell electrodes and temperature dependence of the emitter properties. At high temperatures, the efficiency enhancement via resonant mode cross-coupling and matching can be extended to even higher power, by appropriately patterning the silver back electrode to enforce also an absorber effective surface-plasmon-polariton mode. Our proposed designs can therefore lead the way for mass-producible and low-cost ThermoPhotoVoltaic micro-generators and solar cells. PMID:27363522

Multiphoton photoemission from a copper cathode illuminated by ultrashort laser pulses in an RF photoinjector.

PubMed

Musumeci, P; Cultrera, L; Ferrario, M; Filippetto, D; Gatti, G; Gutierrez, M S; Moody, J T; Moore, N; Rosenzweig, J B; Scoby, C M; Travish, G; Vicario, C

2010-02-26

In this Letter we report on the use of ultrashort infrared laser pulses to generate a copious amount of electrons by a copper cathode in an rf photoinjector. The charge yield verifies the generalized Fowler-Dubridge theory for multiphoton photoemission. The emission is verified to be prompt using a two pulse autocorrelation technique. The thermal emittance associated with the excess kinetic energy from the emission process is comparable with the one measured using frequency tripled uv laser pulses. In the high field of the rf gun, up to 50 pC of charge can be extracted from the cathode using a 80 fs long, 2 microJ, 800 nm pulse focused to a 140 mum rms spot size. Taking into account the efficiency of harmonic conversion, illuminating a cathode directly with ir laser pulses can be the most efficient way to employ the available laser power.

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

PubMed Central

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-01-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

NASA Astrophysics Data System (ADS)

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-08-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

Off-axis beam dynamics in rf-gun-based electron photoinjectors

DOE PAGES

Huang, R.; Mitchell, Chad; Papadopoulos, C.; ...

2016-11-22

The need to operate an rf-gun-based electron photoinjector with a beam emitted away from the cathode center can occur under various circumstances. First, in some cases the cathode can be affected by ion back-bombardment that progressively reduces the quantum efficiency (QE) in its center, making off-axis operation mandatory; second, in some cases the drive laser intensity can be sufficiently high to generate QE depletion in the cathode area illuminated by the laser, forcing off-axis operation; last, in cathodes with nonuniform QE distribution it could be convenient to operate off axis to exploit a better QE. However, operation in this modemore » may lead to growth of the projected transverse beam emittances due to correlations between the transverse and longitudinal degrees of freedom that are introduced within the gun and downstream rf cavities. A strategy is described to mitigate this emittance growth by allowing the beam to propagate along a carefully tuned off-axis trajectory in downstream rf cavities to remove the time-dependent rf kicks introduced in the gun. Along this trajectory, short range wakefields do not degrade the emittance, and long range wakefields degrade the emittance for very high repetition rate only.« less

Acquiring High-Performance Deep-Blue OLED Emitters through an Unexpected Blueshift Color-Tuning Effect Induced by Electron-Donating -OMe Substituents.

PubMed

Peng, Song; Zhao, Yihuan; Fu, Caixia; Pu, Xuemei; Zhou, Liang; Huang, Yan; Lu, Zhiyun

2018-06-07

A series of blue-emissive 7-(diphenylamino)-4-phenoxycoumarin derivatives bearing -CF 3 , -OMe, or -N(Me) 2 substituents on the phenoxy subunit were synthesized. Although both the -CF 3 and -N(Me) 2 modifications were found to trigger redshifted fluorescence, the -OMe substitution was demonstrated to exert an unexpected blueshift color-tuning effect toward the deep-blue region. The reason is that the moderate electron-donating -OMe group can endow coumarins with unaltered HOMO but elevated LUMO energy levels. Moreover, the -OMe substitution was found to be beneficial to the thermal stability of these coumarins. Therefore, the trimethoxy-substituted objective compound can act as a high-performance deep-blue organic light-emitting diode (OLED) emitter, and OLED based on it emits deep-blue light with CIE coordinates of (0.148, 0.084), maximum luminance of 7800 cd m -2 , and maximum external quantum efficiency of 5.1 %. These results not only shed light on the molecular design strategy for high-performance deep-blue OLED emitters through color-tuning, but also show the perspective of coumarin derivatives as deep-blue OLED emitters. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Off-axis beam dynamics in rf-gun-based electron photoinjectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, R.; Mitchell, Chad; Papadopoulos, C.

The need to operate an rf-gun-based electron photoinjector with a beam emitted away from the cathode center can occur under various circumstances. First, in some cases the cathode can be affected by ion back-bombardment that progressively reduces the quantum efficiency (QE) in its center, making off-axis operation mandatory; second, in some cases the drive laser intensity can be sufficiently high to generate QE depletion in the cathode area illuminated by the laser, forcing off-axis operation; last, in cathodes with nonuniform QE distribution it could be convenient to operate off axis to exploit a better QE. However, operation in this modemore » may lead to growth of the projected transverse beam emittances due to correlations between the transverse and longitudinal degrees of freedom that are introduced within the gun and downstream rf cavities. A strategy is described to mitigate this emittance growth by allowing the beam to propagate along a carefully tuned off-axis trajectory in downstream rf cavities to remove the time-dependent rf kicks introduced in the gun. Along this trajectory, short range wakefields do not degrade the emittance, and long range wakefields degrade the emittance for very high repetition rate only.« less

High efficiency radioisotope thermophotovoltaic prototype generator

NASA Technical Reports Server (NTRS)

Avery, James E.; Samaras, John E.; Fraas, Lewis M.; Ewell, Richard

1995-01-01

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, we present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. We compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. We find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. We propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter. The Jet Propulsion Laboratory will design and build the thermal cavity, and JX Crystals will fabricate the gallium antimonide cells, dielectric filters, and resultant receiver panels. With 250 Watts of heat input, we expect this prototype to produce over 300 Watts of electrical energy output for a system energy conversion efficiency of over 12%. This low risk, near term design provides advances relative to present radioisotope thermophotovoltaic generators and has the additional advantage of allowing component and system development and testing to begin immediately. Improved cells and filters can easily be incorporated in this baseline system if they should become available in the future.

High efficiency radioisotope thermophotovoltaic prototype generator

NASA Astrophysics Data System (ADS)

Avery, James E.; Samaras, John E.; Fraas, Lewis M.; Ewell, Richard

1995-10-01

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, we present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. We compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. We find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. We propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter. The Jet Propulsion Laboratory will design and build the thermal cavity, and JX Crystals will fabricate the gallium antimonide cells, dielectric filters, and resultant receiver panels. With 250 Watts of heat input, we expect this prototype to produce over 300 Watts of electrical energy output for a system energy conversion efficiency of over 12%. This low risk, near term design provides advances relative to present radioisotope thermophotovoltaic generators and has the additional advantage of allowing component and system development and testing to begin immediately. Improved cells and filters can easily be incorporated in this baseline system if they should become available in the future.

Low-emittance tuning of storage rings using normal mode beam position monitor calibration

NASA Astrophysics Data System (ADS)

Wolski, A.; Rubin, D.; Sagan, D.; Shanks, J.

2011-07-01

We describe a new technique for low-emittance tuning of electron and positron storage rings. This technique is based on calibration of the beam position monitors (BPMs) using excitation of the normal modes of the beam motion, and has benefits over conventional methods. It is relatively fast and straightforward to apply, it can be as easily applied to a large ring as to a small ring, and the tuning for low emittance becomes completely insensitive to BPM gain and alignment errors that can be difficult to determine accurately. We discuss the theory behind the technique, present some simulation results illustrating that it is highly effective and robust for low-emittance tuning, and describe the results of some initial experimental tests on the CesrTA storage ring.

Interfacing a small thermophotovoltaic generator to the grid

NASA Astrophysics Data System (ADS)

Durisch, W.; Grob, B.; Mayor, J.-C.; Panitz, J.-C.; Rosselet, A.

1999-03-01

A prototype thermophotovoltaic generator and grid-interfacing device have been developed to demonstrate the feasibility of grid-connected operation. For this purpose a conventional butane burner (rated power 1.35 kWth) was equipped with a ceramic composite emitter made of rare earth oxides. A water layer between emitter and photocells was used to protect the photocells against overheating. It absorbs the nonconvertible emitter radiation and is heated up thereby. The hot water so produced in larger units of this type could be used in a primary recirculation loop to transfer heat to a secondary domestic hot water system. For the photovoltaic generator, commercial grade silicon solar cells with 16% efficiency (under standard test conditions) were used. With the radiation of the emitter, a current of 4.6 A at a maximum power point voltage of 3.3 V was produced, corresponding to a DC output of 15 W and a thermal to DC power conversion efficiency of 1.1%. A specially developed high efficiency DC/DC converter and a modified, commercially available inverter were used to feed the generated power to the local grid. Under the experimental conditions in question the DC/DC-converter and the grid-inverter had efficiencies of 98 and 91%, respectively resulting in an overall interface efficiency of 89%. From modeling of the measured electrical characteristics of the photo cell generator under solar and emitter radiation, it is concluded that the photo current was about three times higher under the filtered emitter radiation. Under these conditions the electrical losses of the photocells were significantly higher than under sunlight.

Design, fabrication, and experimental characterization of plasmonic photoconductive terahertz emitters.

PubMed

Berry, Christopher; Hashemi, Mohammad Reza; Unlu, Mehmet; Jarrahi, Mona

2013-07-08

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on photoconduction, which has been one of the most commonly used techniques for terahertz generation (1-8). Terahertz generation in a photoconductive emitter is achieved by pumping an ultrafast photoconductor with a pulsed or heterodyned laser illumination. The induced photocurrent, which follows the envelope of the pump laser, is routed to a terahertz radiating antenna connected to the photoconductor contact electrodes to generate terahertz radiation. Although the quantum efficiency of a photoconductive emitter can theoretically reach 100%, the relatively long transport path lengths of photo-generated carriers to the contact electrodes of conventional photoconductors have severely limited their quantum efficiency. Additionally, the carrier screening effect and thermal breakdown strictly limit the maximum output power of conventional photoconductive terahertz sources. To address the quantum efficiency limitations of conventional photoconductive terahertz emitters, we have developed a new photoconductive emitter concept which incorporates a plasmonic contact electrode configuration to offer high quantum-efficiency and ultrafast operation simultaneously. By using nano-scale plasmonic contact electrodes, we significantly reduce the average photo-generated carrier transport path to photoconductor contact electrodes compared to conventional photoconductors (9). Our method also allows increasing photoconductor active area without a considerable increase in the capacitive loading to the antenna, boosting the maximum terahertz radiation power by preventing the carrier screening effect and thermal breakdown at high optical pump powers. By incorporating plasmonic contact electrodes, we demonstrate enhancing the optical-to-terahertz power conversion efficiency of a conventional photoconductive terahertz emitter by a factor of 50 (10).

Parameter Optimization of PAL-XFEL Injector

NASA Astrophysics Data System (ADS)

Lee, Jaehyun; Ko, In Soo; Han, Jang-Hui; Hong, Juho; Yang, Haeryong; Min, Chang Ki; Kang, Heung-Sik

2018-05-01

A photoinjector is used as the electron source to generate a high peak current and low emittance beam for an X-ray free electron laser (FEL). The beam emittance is one of the critical parameters to determine the FEL performance together with the slice energy spread and the peak current. The Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL) was constructed in 2015, and the beam commissioning was carried out in spring 2016. The injector is running routinely for PAL-XFEL user operation. The operational parameters of the injector have been optimized experimentally, and these are somewhat different from the originally designed ones. Therefore, we study numerically the injector parameters based on the empirically optimized parameters and review the present operating condition.

Investigation of fundamental limits to beam brightness available from photoinjectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazarov, Ivan

2015-07-09

The goal of this project was investigation of fundamental limits to beam brightness available from photoinjectors. This basic research in accelerator physics spanned over 5 years aiming to extend the fundamental understanding of high average current, low emittance sources of relativistic electrons based on photoemission guns, a necessary prerequisite for a new generation of coherent X-ray synchrotron radiation facilities based on continuous duty superconducting linacs. The program focused on two areas critical to making advances in the electron source performance: 1) the physics of photocathodes for the production of low emittance electrons and 2) control of space charge forces inmore » the immediate vicinity to the cathode via 3D laser pulse shaping.« less

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

NASA Astrophysics Data System (ADS)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (<50% spread). The performance of our device demonstrates a feasible path to dramatic improvements in lithographic patterning systems, enabling continued progress in existing industries and opening opportunities in nanomanufacturing.

Precision Control of the Electron Longitudinal Bunch Shape Using an Emittance-Exchange Beam Line

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ha, Gwanghui; Cho, Moo -Hyun; Namkung, W.

2017-03-09

Here, we report on the experimental generation of relativistic electron bunches with a tunable longitudinal bunch shape. A longitudinal bunch-shaping (LBS) beam line, consisting of a transverse mask followed by a transverse-to-longitudinal emittance exchange (EEX) beam line, is used to tailor the longitudinal bunch shape (or current profile) of the electron bunch. The mask shapes the bunch’s horizontal profile, and the EEX beam line converts it to a corresponding longitudinal profile. The Argonne wakefield accelerator rf photoinjector delivers electron bunches into a LBS beam line to generate a variety of longitudinal bunch shapes. The quality of the longitudinal bunch shapemore » is limited by various perturbations in the exchange process. We develop a simple method, based on the incident slope of the bunch, to significantly suppress the perturbations.« less

Electron emission from ferroelectrics - a review

NASA Astrophysics Data System (ADS)

Riege, H.

1994-02-01

The strong pulsed emission of electrons from the surface of ferroelectric (FE) materials was discovered at CERN in 1987. Since then many aspects and properties of the method of generation and propagation of electron beams from FE have been studied experimentally. The method is based on macroscopic charge separation and self-emission of electrons under the influence of their own space-charge fields. Hence, this type of emission is not limited by the Langmuir-Child law as are conventional emission methods. Charge separation and electron emission can be achieved by rapid switching of the spontaneous, ferroelectric polarization. Polarization switching may be induced by application of electrical-field or mechanical-pressure pulses, as well as by thermal heating or laser illumination of the ferroelectric emitter. At higher emission intensities plasma formation assists the FE emission and leads to a strong growth of emitted current amplitude, which is no longer limited by the FE material and the surface properties. The most attractive features of FE emission are robustness and ease of manipulation of the emitter cathodes which can be transported through atmospheric air and used without any problems in vacuum, low-pressure gas or plasma environments. Large-area arrangements of multiple emitters, switched in interleaved mode, can produce electron beams of any shape, current amplitude or time structure. The successful application of FE emission in accelerator technology has been demonstrated experimentally in several cases, e.g. for triggering high-power gas switches, for photocathodes in electron guns, and for electron-beam generators intended to generate, neutralize and enhance ion beams in ion sources and ion linacs. Other applications can be envisaged in microwave power generators and in the fields of electronics and vacuum microelectronics.

Detailed Modeling of Physical Processes in Electron Sources for Accelerator Applications

NASA Astrophysics Data System (ADS)

Chubenko, Oksana; Afanasev, Andrei

2017-01-01

At present, electron sources are essential in a wide range of applications - from common technical use to exploring the nature of matter. Depending on the application requirements, different methods and materials are used to generate electrons. State-of-the-art accelerator applications set a number of often-conflicting requirements for electron sources (e.g., quantum efficiency vs. polarization, current density vs. lifetime, etc). Development of advanced electron sources includes modeling and design of cathodes, material growth, fabrication of cathodes, and cathode testing. The detailed simulation and modeling of physical processes is required in order to shed light on the exact mechanisms of electron emission and to develop new-generation electron sources with optimized efficiency. The purpose of the present work is to study physical processes in advanced electron sources and develop scientific tools, which could be used to predict electron emission from novel nano-structured materials. In particular, the area of interest includes bulk/superlattice gallium arsenide (bulk/SL GaAs) photo-emitters and nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) photo/field-emitters. Work supported by The George Washington University and Euclid TechLabs LLC.

Core-shell nanophosphor architecture: toward efficient energy transport in inorganic/organic hybrid solar cells.

PubMed

Li, Qinghua; Yuan, Yongbiao; Chen, Zihan; Jin, Xiao; Wei, Tai-huei; Li, Yue; Qin, Yuancheng; Sun, Weifu

2014-08-13

In this work, a core-shell nanostructure of samarium phosphates encapsulated into a Eu(3+)-doped silica shell has been successfully fabricated, which has been confirmed by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution TEM. Moreover, we report the energy transfer process from the Sm(3+) to emitters Eu(3+) that widens the light absorption range of the hybrid solar cells (HSCs) and the strong enhancement of the electron-transport of TiO2/poly(3-hexylthiophene) (P3HT) bulk heterojunction (BHJ) HSCs by introducing the unique core-shell nanoarchitecture. Furthermore, by applying femtosecond transient absorption spectroscopy, we successfully obtain the electron transport lifetimes of BHJ systems with or without incorporating the core-shell nanophosphors (NPs). Concrete evidence has been provided that the doping of core-shell NPs improves the efficiency of electron transfers from donor to acceptor, but the hole transport almost remains unchanged. In particular, the hot electron transfer lifetime was shortened from 30.2 to 16.7 ps, i.e., more than 44% faster than pure TiO2 acceptor. Consequently, a notable power conversion efficiency of 3.30% for SmPO4@Eu(3+):SiO2 blended TiO2/P3HT HSCs is achieved at 5 wt % as compared to 1.98% of pure TiO2/P3HT HSCs. This work indicates that the core-shell NPs can efficiently broaden the absorption region, facilitate electron-transport of BHJ, and enhance photovoltaic performance of inorganic/organic HSCs.

Investigation of spatial resolution and temporal performance of SAPHIRE (scintillator avalanche photoconductor with high resolution emitter readout) with integrated electrostatic focusing

NASA Astrophysics Data System (ADS)

Scaduto, David A.; Lubinsky, Anthony R.; Rowlands, John A.; Kenmotsu, Hidenori; Nishimoto, Norihito; Nishino, Takeshi; Tanioka, Kenkichi; Zhao, Wei

2014-03-01

We have previously proposed SAPHIRE (scintillator avalanche photoconductor with high resolution emitter readout), a novel detector concept with potentially superior spatial resolution and low-dose performance compared with existing flat-panel imagers. The detector comprises a scintillator that is optically coupled to an amorphous selenium photoconductor operated with avalanche gain, known as high-gain avalanche rushing photoconductor (HARP). High resolution electron beam readout is achieved using a field emitter array (FEA). This combination of avalanche gain, allowing for very low-dose imaging, and electron emitter readout, providing high spatial resolution, offers potentially superior image quality compared with existing flat-panel imagers, with specific applications to fluoroscopy and breast imaging. Through the present collaboration, a prototype HARP sensor with integrated electrostatic focusing and nano- Spindt FEA readout technology has been fabricated. The integrated electron-optic focusing approach is more suitable for fabricating large-area detectors. We investigate the dependence of spatial resolution on sensor structure and operating conditions, and compare the performance of electrostatic focusing with previous technologies. Our results show a clear dependence of spatial resolution on electrostatic focusing potential, with performance approaching that of the previous design with external mesh-electrode. Further, temporal performance (lag) of the detector is evaluated and the results show that the integrated electrostatic focusing design exhibits comparable or better performance compared with the mesh-electrode design. This study represents the first technical evaluation and characterization of the SAPHIRE concept with integrated electrostatic focusing.

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J. E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {>=}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {>=}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

Low Emittance Guns for the ILC Polarized Electron Beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Ioakeimidi, K.

Polarized electron beams generated by DC guns are routinely available at several accelerators including JLAB, Mainz and SLAC. These guns operate with a cathode bias on the order of -100 kV. To minimize space charge effects, relatively long bunches are generated at the gun and then compressed longitudinally external to the gun just before and during initial acceleration. For linear colliders, this compression is accomplished using a combination of rf bunchers. For the basic design of the International Linear Collider (ILC), a 120 kV DC photocathode gun is used to produce a series of nanosecond bunches that are each compressedmore » by two sub-harmonic bunchers (SHBs) followed by an L-band buncher and capture section. The longitudinal bunching process results in a significantly higher emittance than produced by the gun alone. While high-energy experiments using polarized beams are not generally sensitive to the source emittance, there are several benefits to a lower source emittance including a simpler more efficient injector system and a lower radiation load during transport especially at bends as at the damping ring. For the ILC, the SHBs could be eliminated if the voltage of the gun is raised sufficiently. Simulations using the General Particle Tracer (GPT) package indicate that a cathode bias voltage of {ge}200 kV should allow both SHBs to be operated at 433 or even 650 MHz, while {ge}500 kV would be required to eliminate the SHBs altogether. Simulations can be used to determine the minimum emittance possible if the injector is designed for a given increased voltage. A possible alternative to the DC gun is an rf gun. Emittance compensation, routinely used with rf guns, is discussed for higher-voltage DC guns.« less

Plasma wakefield acceleration experiments at FACET II

NASA Astrophysics Data System (ADS)

Joshi, C.; Adli, E.; An, W.; Clayton, C. E.; Corde, S.; Gessner, S.; Hogan, M. J.; Litos, M.; Lu, W.; Marsh, K. A.; Mori, W. B.; Vafaei-Najafabadi, N.; O'shea, B.; Xu, Xinlu; White, G.; Yakimenko, V.

2018-03-01

During the past two decades of research, the ultra-relativistic beam-driven plasma wakefield accelerator (PWFA) concept has achieved many significant milestones. These include the demonstration of ultra-high gradient acceleration of electrons over meter-scale plasma accelerator structures, efficient acceleration of a narrow energy spread electron bunch at high-gradients, positron acceleration using wakes in uniform plasmas and in hollow plasma channels, and demonstrating that highly nonlinear wakes in the ‘blow-out regime’ have the electric field structure necessary for preserving the emittance of the accelerating bunch. A new 10 GeV electron beam facility, Facilities for Accelerator Science and Experimental Test (FACET) II, is currently under construction at SLAC National Accelerator Laboratory for the next generation of PWFA research and development. The FACET II beams will enable the simultaneous demonstration of substantial energy gain of a small emittance electron bunch while demonstrating an efficient transfer of energy from the drive to the trailing bunch. In this paper we first describe the capabilities of the FACET II facility. We then describe a series of PWFA experiments supported by numerical and particle-in-cell simulations designed to demonstrate plasma wake generation where the drive beam is nearly depleted of its energy, high efficiency acceleration of the trailing bunch while doubling its energy and ultimately, quantifying the emittance growth in a single stage of a PWFA that has optimally designed matching sections. We then briefly discuss other FACET II plasma-based experiments including in situ positron generation and acceleration, and several schemes that are promising for generating sub-micron emittance bunches that will ultimately be needed for both an early application of a PWFA and for a plasma-based future linear collider.

Plasma wakefield acceleration experiments at FACET II

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, C.; Adli, E.; An, W.

During the past two decades of research, the ultra-relativistic beam-driven plasma wakefield accelerator (PWFA) concept has achieved many significant milestones. These include the demonstration of ultra-high gradient acceleration of electrons over meter-scale plasma accelerator structures, efficient acceleration of a narrow energy spread electron bunch at high-gradients, positron acceleration using wakes in uniform plasmas and in hollow plasma channels, and demonstrating that highly nonlinear wakes in the 'blow-out regime' have the electric field structure necessary for preserving the emittance of the accelerating bunch. A new 10 GeV electron beam facility, Facilities for Accelerator Science and Experimental Test (FACET) II, is currentlymore » under construction at SLAC National Accelerator Laboratory for the next generation of PWFA research and development. The FACET II beams will enable the simultaneous demonstration of substantial energy gain of a small emittance electron bunch while demonstrating an efficient transfer of energy from the drive to the trailing bunch. In this paper we first describe the capabilities of the FACET II facility. We then describe a series of PWFA experiments supported by numerical and particle-in-cell simulations designed to demonstrate plasma wake generation where the drive beam is nearly depleted of its energy, high efficiency acceleration of the trailing bunch while doubling its energy and ultimately, quantifying the emittance growth in a single stage of a PWFA that has optimally designed matching sections. Here, we briefly discuss other FACET II plasma-based experiments including in situ positron generation and acceleration, and several schemes that are promising for generating sub-micron emittance bunches that will ultimately be needed for both an early application of a PWFA and for a plasma-based future linear collider.« less

Plasma wakefield acceleration experiments at FACET II

DOE PAGES

Joshi, C.; Adli, E.; An, W.; ...

2018-01-12

During the past two decades of research, the ultra-relativistic beam-driven plasma wakefield accelerator (PWFA) concept has achieved many significant milestones. These include the demonstration of ultra-high gradient acceleration of electrons over meter-scale plasma accelerator structures, efficient acceleration of a narrow energy spread electron bunch at high-gradients, positron acceleration using wakes in uniform plasmas and in hollow plasma channels, and demonstrating that highly nonlinear wakes in the 'blow-out regime' have the electric field structure necessary for preserving the emittance of the accelerating bunch. A new 10 GeV electron beam facility, Facilities for Accelerator Science and Experimental Test (FACET) II, is currentlymore » under construction at SLAC National Accelerator Laboratory for the next generation of PWFA research and development. The FACET II beams will enable the simultaneous demonstration of substantial energy gain of a small emittance electron bunch while demonstrating an efficient transfer of energy from the drive to the trailing bunch. In this paper we first describe the capabilities of the FACET II facility. We then describe a series of PWFA experiments supported by numerical and particle-in-cell simulations designed to demonstrate plasma wake generation where the drive beam is nearly depleted of its energy, high efficiency acceleration of the trailing bunch while doubling its energy and ultimately, quantifying the emittance growth in a single stage of a PWFA that has optimally designed matching sections. Here, we briefly discuss other FACET II plasma-based experiments including in situ positron generation and acceleration, and several schemes that are promising for generating sub-micron emittance bunches that will ultimately be needed for both an early application of a PWFA and for a plasma-based future linear collider.« less

All-optical control and super-resolution imaging of quantum emitters in layered materials.

PubMed

Kianinia, Mehran; Bradac, Carlo; Sontheimer, Bernd; Wang, Fan; Tran, Toan Trong; Nguyen, Minh; Kim, Sejeong; Xu, Zai-Quan; Jin, Dayong; Schell, Andreas W; Lobo, Charlene J; Aharonovich, Igor; Toth, Milos

2018-02-28

Layered van der Waals materials are emerging as compelling two-dimensional platforms for nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Among these, hexagonal boron nitride (hBN) is known to host ultra-bright, room-temperature quantum emitters, whose nature is yet to be fully understood. Here we present a set of measurements that give unique insight into the photophysical properties and level structure of hBN quantum emitters. Specifically, we report the existence of a class of hBN quantum emitters with a fast-decaying intermediate and a long-lived metastable state accessible from the first excited electronic state. Furthermore, by means of a two-laser repumping scheme, we show an enhanced photoluminescence and emission intensity, which can be utilized to realize a new modality of far-field super-resolution imaging. Our findings expand current understanding of quantum emitters in hBN and show new potential ways of harnessing their nonlinear optical properties in sub-diffraction nanoscopy.

DC power limitation of the heterojunction bipolar transistor with dot geometry: Effect of base potential distribution on thermal runaway

NASA Astrophysics Data System (ADS)

Liou, L. L.; Jenkins, T.; Huang, C. I.

1997-06-01

The d.c. power limitation of a conventional HBT with dot geometry was studied theoretically using combined electro-thermal and transmission line models. In most cases, the thermal runaway occurs at a power level lower than that set by the intrinsic electronic property of the device. The dependence of the d.c. thermal runaway threshold power density, Pmax, on the emitter dot radius and emitter ballast resistance was calculated. Increasing emitter dot radius lowers Pmax. Although ballast resistance increases Pmax, the effect reduces as the emitter dot radius increases. This is caused by the non-uniform potential distribution in the base layer. When thermal runaway is considered, the nonuniform base-emitter potential offsets the improvement of the power handling capability by the physical ballast resistance. Conventional HBTs with a large radius (greater than 4 μm) exhibit a small Pmax caused by thermal effect. This threshold power density can be increased drastically by using the thermal shunt technique.

Development of a Robust, High Current, Low Power Field Emission Electron Gun for a Spaceflight Reflectron Time-of-Flight Mass Spectrometer

NASA Technical Reports Server (NTRS)

Southard, Adrian E.; Getty, Stephanie A.; Feng, Steven; Glavin, Daniel P.; Auciello, Orlando; Sumant, Anirudha

2012-01-01

Carbon materials, including carbon nanotubes (CNTs) and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD), have been of considerable interest for field emission applications for over a decade. In particular, robust field emission materials are compelling for space applications due to the low power consumption and potential for miniaturization. A reflectron time-of-flight mass spectrometer (TOF-MS) under development for in situ measurements on the Moon and other Solar System bodies uses a field emitter to generate ions from gaseous samples, using electron ionization. For these unusual environments, robustness, reliability, and long life are of paramount importance, and to this end, we have explored the field emission properties and lifetime of carbon nanotubes and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) thin films, the latter developed and patented by Argonne National Laboratory. We will present recent investigations of N-UNCD as a robust field emitter, revealing that this material offers stable performance in high vacuum for up to 1000 hours with threshold voltage for emission of about 3-4 V/lJm and current densities in the range of tens of microA. Optimizing the mass resolution and sensitivity of such a mass spectrometer has also been enabled by a parallel effort to scale up a CNT emitter to an array measuring 2 mm x 40 mm. Through simulation and experiment of the new extended format emitter, we have determined that focusing the electron beam is limited due to the angular spread of the emitted electrons. This dispersion effect can be reduced through modification of the electron gun geometry, but this reduces the current reaching the ionization region. By increasing the transmission efficiency of the electron beam to the anode, we have increased the anode current by two orders of magnitude to realize a corresponding enhancement in instrument sensitivity, at a moderate cost to mass resolution. We will report recent experimental and modeling results to describe the performance of a field emission electron gun as employed in the Volatile Analysis by Pyrolysis of Regolith (VAPoR) TOF-MS prototype.

Fundamental studies of black chrome for solar collector use

NASA Technical Reports Server (NTRS)

Mcdonald, G.; Buzek, B.; Curtis, H.

1976-01-01

The thicknesses of black chrome plated for various times have been measured from electron photomicrographs and correlated with the solar spectrum absorptance and infrared emittance as calculated from spectral reflectance measurements. The maximum absorptance is reached at an average thickness of 0.5 micrometer. The emittance increases only slightly up to 1.0 micrometer but increases rapidly at thickness above 1.0 micrometer.

High-Power Broad-Area Diode Lasers and Laser Bars

NASA Astrophysics Data System (ADS)

Erbert, Goetz; Baerwolff, Arthur; Sebastian, Juergen; Tomm, Jens

This review presents the basic ideas and some examples of the chip technology of high-power diode lasers ( λ= 650,-1060,) in connection with the achievements of mounted single-stripe emitters in recent years.In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.

High efficiency thermionic converter studies

NASA Technical Reports Server (NTRS)

Huffman, F. N.; Sommer, A. H.; Balestra, C. L.; Briere, T. R.; Lieb, D.; Oettinger, P. E.; Goodale, D. B.

1977-01-01

Research in thermionic energy conversion technology is reported. The objectives were to produce converters suitable for use in out of core space reactors, radioisotope generators, and solar satellites. The development of emitter electrodes that operate at low cesium pressure, stable low work function collector electrodes, and more efficient means of space charge neutralization were investigated to improve thermionic converter performance. Potential improvements in collector properties were noted with evaporated thin film barium oxide coatings. Experiments with cesium carbonate suggest this substance may provide optimum combinations of cesium and oxygen for thermionic conversion.

Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, E.; Ben-Zvi, I.; Kewisch, J.

2010-05-23

RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in themore » preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is expected to improve further. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper.« less

High efficiency light source using solid-state emitter and down-conversion material

DOEpatents

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

2010-10-26

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Fabrication and electrical characterization of planar lighting devices with Cs3Sb photocathode emitters

NASA Astrophysics Data System (ADS)

Jeong, Hyo-Soo; Keller, Kris; Culkin, Brad

2017-03-01

Non-vacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices' operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the Cs3Sb flat emitters.

Opto-electronic pulsed THz systems

NASA Astrophysics Data System (ADS)

Planken, P. C. M.; van Rijmenam, C. E. W. M.; Schouten, R. N.

2005-07-01

We present an overview of pulsed THz emission and detection schemes and give results of a highly efficient, water-cooled, semi-large aperture THz emitter. Using electro-optic detection we obtain a dynamic range of more than 5000 in a total measurement time of 20 ms, which represents the highest dynamic range for THz emitters centred around femtosecond laser oscillators to date. We find that the detection sensitivity is completely determined by the photon shot-noise of the probe laser beam. As an application of our efficient THz emitter, we present the first measurement of a phonon resonance in a THz apertureless scanning near-field optical microscopy measurement.

Vertically aligned carbon nanotube emitter on metal foil for medical X-ray imaging.

PubMed

Ryu, Je Hwang; Kim, Wan Sun; Lee, Seung Ho; Eom, Young Ju; Park, Hun Kuk; Park, Kyu Chang

2013-10-01

A simple method is proposed for growing vertically aligned carbon nanotubes on metal foil using the triode direct current plasma-enhanced chemical vapor deposition (PECVD). The carbon nanotube (CNT) electron emitter was fabricated using fewer process steps with an acid treated metal substrate. The CNT emitter was used for X-ray generation, and the X-ray image of mouse's joint was obtained with an anode current of 0.5 mA at an anode bias of 60 kV. The simple fabrication of a well-aligned CNT with a protection layer on metal foil, and its X-ray application, were studied.

Coulomb-coupled quantum-dot thermal transistors

NASA Astrophysics Data System (ADS)

Zhang, Yanchao; Yang, Zhimin; Zhang, Xin; Lin, Bihong; Lin, Guoxing; Chen, Jincan

2018-04-01

A quantum-dot thermal transistor consisting of three Coulomb-coupled quantum dots coupled to the respective electronic reservoirs by tunnel contacts is established. The heat flows through the collector and emitter can be controlled by the temperature of the base. It is found that a small change in the base heat flow can induce a large heat flow change in the collector and emitter. The huge amplification factor can be obtained by optimizing the Coulomb interaction between the collector and the emitter or by decreasing the tunneling rate at the base. The proposed quantum-dot thermal transistor may open up potential applications in low-temperature solid-state thermal circuits at the nanoscale.

Information extraction from FN plots of tungsten microemitters.

PubMed

Mussa, Khalil O; Mousa, Marwan S; Fischer, Andreas

2013-09-01

Tungsten based microemitter tips have been prepared both clean and coated with dielectric materials. For clean tungsten tips, apex radii have been varied ranging from 25 to 500 nm. These tips were manufactured by electrochemical etching a 0.1 mm diameter high purity (99.95%) tungsten wire at the meniscus of two molar NaOH solution. Composite micro-emitters considered here are consisting of a tungsten core coated with different dielectric materials-such as magnesium oxide (MgO), sodium hydroxide (NaOH), tetracyanoethylene (TCNE), and zinc oxide (ZnO). It is worthwhile noting here, that the rather unconventional NaOH coating has shown several interesting properties. Various properties of these emitters were measured including current-voltage (IV) characteristics and the physical shape of the tips. A conventional field emission microscope (FEM) with a tip (cathode)-screen (anode) separation standardized at 10 mm was used to electrically characterize the electron emitters. The system was evacuated down to a base pressure of ∼10(-8) mbar when baked at up to ∼180 °C overnight. This allowed measurements of typical field electron emission (FE) characteristics, namely the IV characteristics and the emission images on a conductive phosphorus screen (the anode). Mechanical characterization has been performed through a FEI scanning electron microscope (SEM). Within this work, the mentioned experimental results are connected to the theory for analyzing Fowler-Nordheim (FN) plots. We compared and evaluated the data extracted from clean tungsten tips of different radii and determined deviations between the results of different extraction methods applied. In particular, we derived the apex radii of several clean and coated tungsten tips by both SEM imaging and analyzing FN plots. The aim of this analysis is to support the ongoing discussion on recently developed improvements of the theory for analyzing FN plots related to metal field electron emitters, which in particular introduces a new form of intercept correction factors. The results derived demonstrate the applicability of the applied method on needle shaped - i.e. non planar - emitters as well as its limits. Copyright © 2013 Elsevier B.V. All rights reserved.

Liquid-phase deposition of thin Si films by ballistic electro-reduction

NASA Astrophysics Data System (ADS)

Ohta, T.; Gelloz, B.; Kojima, A.; Koshida, N.

2013-01-01

It is shown that the nanocryatalline silicon ballistic electron emitter operates in a SiCl4 solution without using any counter electrodes and that thin amorphous Si films are efficiently deposited on the emitting surface with no contaminations and by-products. Despite the large electrochemical window of the SiCl4 solution, electrons injected with sufficiently high energies preferentially reduce Si4+ ions at the interface. Using an emitter with patterned line emission windows, a Si-wires array can be formed in parallel. This low-temperature liquid-phase deposition technique provides an alternative clean process for power-effective fabrication of advanced thin Si film structures and devices.

Derivation and correction of the Tsu-Esaki tunneling current formula

NASA Astrophysics Data System (ADS)

Bandara, K. M. S. V.; Coon, D. D.

1989-07-01

The theoretical basis of the Tsu-Esaki tunneling current formula [Appl. Phys. Lett. 22, 562 (1973)] is examined in detail and corrections are found. The starting point is an independent particle picture with fully antisymmetrized N-electron wave functions. Unitarity is used to resolve an orthonormality issue raised in earlier work. A new set of mutually consistent equations is derived for bias voltage, tunneling current, and electron densities in the emitter and collector. Corrections include a previously noted kinematic factor and a modification of emitter and collector Fermi levels. The magnitude of the corrections is illustrated numerically for the case of a resonant tunneling current-voltage characteristic.

Novel planar field emission of ultra-thin individual carbon nanotubes.

PubMed

Song, Xuefeng; Gao, Jingyun; Fu, Qiang; Xu, Jun; Zhao, Qing; Yu, Dapeng

2009-10-07

In this work, we proposed and realized a new prototype of planar field emission device based on as-grown individual carbon nanotubes (CNTs) on the surface of a Si-SiO2 substrate. The anode, cathode and the CNT tip all lie on the same surface, so the electron emission is reduced from three-dimensional to two-dimensional. The benefits of such a design include usage of thinner CNT emitters, integrity with planar technology, stable construction, better heat dissipation, etc. A tip-to-tip field emission device was presented besides the tip-to-electrode one. Real-time, in situ observation of the planar field emission was realized in a scanning electron microscope (SEM). Measurements showed that the minimum voltage for 10 nA field emission current was only 8.0 V and the maximum emission current density in an individual CNT emitter (1.0 nm in diameter) exceeded 5.7 x 10(8) A cm(-2). These results stand out in the comparison with recent works on individual CNT field emission, indicating that the planar devices based on ultra-thin individual CNTs are more competitive candidates for next-generation electron field emitters.

Establishment of design space for high current gain in III-N hot electron transistors

NASA Astrophysics Data System (ADS)

Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

2018-01-01

This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

High current plasma electron emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiksel, G.; Almagri, A.F.; Craig, D.

1995-07-01

A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current,more » small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications.« less

A multiple-scattering polaritonic-operator method for hybrid arrays of metal nanoparticles and quantum emitters

NASA Astrophysics Data System (ADS)

Chatzidakis, Georgios D.; Yannopapas, Vassilios

2018-05-01

We present a new technique for the study of hybrid collections of quantum emitters (atoms, molecules, quantum dots) with nanoparticles. The technique is based on a multiple-scattering polaritonic-operator formalism in conjunction with an electromagnetic coupled dipole method. Apart from collections of quantum emitters and nanoparticles, the method can equally treat the interaction of a collection of quantum emitters with a single nano-object of arbitrary shape in which case the nano-object is treated as a finite three-dimensional lattice of point scatterers. We have applied our method to the case of linear array (chain) of dimers of quantum emitters and metallic nanoparticles wherein the corresponding (geometrical and physical) parameters of the dimers are chosen so as the interaction between the emitter and the nanoparticle lies in the strong-coupling regime in order to enable the formation of plexciton states in the dimer. In particular, for a linear chain of dimers, we show that the corresponding light spectra reveal a multitude of plexciton modes resulting from the hybridization of the plexciton resonances of each individual dimer in a manner similar to the tight-binding description of electrons in solids.

Theoretical analysis of field emission from a metal diamond cold cathode emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lerner, P.; Cutler, P.H.; Miskovsky, N.M.

Recently, Geis {ital et al.} [J. Vac. Sci. Technol. B {bold 14}, 2060 (1996)] proposed a cold cathode emitter based on a Spindt-type design using a diamond film doped by substitutional nitrogen. The device is characterized by high field emission currents at very low power. Two properties, the rough surface of the metallic injector and the negative electron affinity of the (111) surface of the diamond are essential for its operation. We present a first consistent quantitative theory of the operation of a Geis{endash}Spindt diamond field emitter. Its essential features are predicated on nearly {ital zero-field conditions} in the diamondmore » beyond the depletion layer, {ital quasiballistic transport} in the conduction band, and applicability of a modified {ital Fowler{endash}Nordheim equation} to the transmission of electrons through the Schottky barrier at the metal-diamond interface. Calculated results are in good qualitative and quantitative agreement with the experimental results of Geis {ital et al.} {copyright} {ital 1997 American Vacuum Society.}« less

Transverse emittance-preserving arc compressor for high-brightness electron beam-based light sources and colliders

NASA Astrophysics Data System (ADS)

Di Mitri, S.; Cornacchia, M.

2015-03-01

Bunch length magnetic compression is used in high-brightness linacs driving free-electron lasers (FELs) and particle colliders to increase the peak current of the injected beam. To date, it is performed in dedicated insertions made of few degrees bending magnets and the compression factor is limited by the degradation of the beam transverse emittance owing to emission of coherent synchrotron radiation (CSR). We reformulate the known concept of CSR-driven optics balance for the general case of varying bunch length and demonstrate, through analytical and numerical results, that a 500 pC charge beam can be time-compressed in a periodic 180 deg arc at 2.4 GeV beam energy and lower, by a factor of up to 45, reaching peak currents of up to 2 kA and with a normalized emittance growth at the 0.1 μ \\text{m} rad level. The proposed solution offers new schemes of beam longitudinal gymnastics; an application to an energy recovery linac driving FEL is discussed.

USSR Report, Electronics and Electrical Engineering.

DTIC Science & Technology

1985-04-30

References 15: 12 Russian, 3 Western. [147-6900] UDC: 621.316.933.6 WIDE-APERTURE ’ BLACK BOY ’ UHF NOISE EMITTER WITH 104 K BRIGHTNESS TEMPERATURE...Ferromagnetic Semiconductors (F. G. Bass, N. N. Nasonov; IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENIY RADIOFIZIKA, No 11, Nov 84) 19 A Wide-Aperture ’ Black ... Boy ’ UHF Noise Emitter with 10 K Brightness (S. V. Butakova; IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENIY RADIOFIZIKA, No 11, Nov 84) 19 BROADCASTING

Acceleration of electron bunches by intense laser pulse in vacuum

NASA Astrophysics Data System (ADS)

Hua, J. F.; Ho, Y. K.; Lin, Y. Z.; Cao, N.

2003-08-01

This paper addresses the output characteristics of real electron bunches accelerated with ultra-intense laser pulse in vacuum by the capture & acceleration scenario (CAS) scheme (see, e.g., Phys. Rev. E66 (2002) 066501). Normally, the size of an electron bunch is much larger than that of a tightly focused and compressed laser pulse. We examine in detail the features of the intersection region, the distribution of electrons which can experience an intense laser field and be accelerated to high energy. Furthermore, the output properties of the accelerated CAS electrons, such as the energy spectra, the angular distributions, the energy-angle correlations, the acceleration gradient, the energy which can be reached with this scheme, the emittances of the outgoing electron bunches, and the dependence of the output properties on the incident electron beam qualities such as the emittance, focusing status, etc. were studied and explained. We found that with intense laser systems and electron beam technology currently available nowadays, the number of CAS electrons can reach 10 4-10 5, when the total number of incident electrons in the practical bunch reaches ˜10 8. These results demonstrate that CAS is promising to become a novel mechanism of vacuum laser accelerators.

Multiobjective optimization design of an rf gun based electron diffraction beam line

NASA Astrophysics Data System (ADS)

Gulliford, Colwyn; Bartnik, Adam; Bazarov, Ivan; Maxson, Jared

2017-03-01

Multiobjective genetic algorithm optimizations of a single-shot ultrafast electron diffraction beam line comprised of a 100 MV /m 1.6-cell normal conducting rf (NCRF) gun, as well as a nine-cell 2 π /3 bunching cavity placed between two solenoids, have been performed. These include optimization of the normalized transverse emittance as a function of bunch charge, as well as optimization of the transverse coherence length as a function of the rms bunch length of the beam at the sample location for a fixed charge of 1 06 electrons. Analysis of the resulting solutions is discussed in terms of the relevant scaling laws, and a detailed description of one of the resulting solutions from the coherence length optimizations is given. For a charge of 1 06 electrons and final beam sizes of σx≥25 μ m and σt≈5 fs , we found a relative coherence length of Lc ,x/σx≈0.07 using direct optimization of the coherence length. Additionally, based on optimizations of the emittance as a function of final bunch length, we estimate the relative coherence length for bunch lengths of 30 and 100 fs to be roughly 0.1 and 0.2 nm /μ m , respectively. Finally, using the scaling of the optimal emittance with bunch charge, for a charge of 1 05 electrons, we estimate relative coherence lengths of 0.3, 0.5, and 0.92 nm /μ m for final bunch lengths of 5, 30 and 100 fs, respectively.

High-temperature optically activated GaAs power switching for aircraft digital electronic control

NASA Technical Reports Server (NTRS)

Berak, J. M.; Grantham, D. H.; Swindal, J. L.; Black, J. F.; Allen, L. B.

1983-01-01

Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

Electron-phonon interaction in efficient perovskite blue emitters

NASA Astrophysics Data System (ADS)

Gong, Xiwen; Voznyy, Oleksandr; Jain, Ankit; Liu, Wenjia; Sabatini, Randy; Piontkowski, Zachary; Walters, Grant; Bappi, Golam; Nokhrin, Sergiy; Bushuyev, Oleksandr; Yuan, Mingjian; Comin, Riccardo; McCamant, David; Kelley, Shana O.; Sargent, Edward H.

2018-06-01

Low-dimensional perovskites have—in view of their high radiative recombination rates—shown great promise in achieving high luminescence brightness and colour saturation. Here we investigate the effect of electron-phonon interactions on the luminescence of single crystals of two-dimensional perovskites, showing that reducing these interactions can lead to bright blue emission in two-dimensional perovskites. Resonance Raman spectra and deformation potential analysis show that strong electron-phonon interactions result in fast non-radiative decay, and that this lowers the photoluminescence quantum yield (PLQY). Neutron scattering, solid-state NMR measurements of spin-lattice relaxation, density functional theory simulations and experimental atomic displacement measurements reveal that molecular motion is slowest, and rigidity greatest, in the brightest emitter. By varying the molecular configuration of the ligands, we show that a PLQY up to 79% and linewidth of 20 nm can be reached by controlling crystal rigidity and electron-phonon interactions. Designing crystal structures with electron-phonon interactions in mind offers a previously underexplored avenue to improve optoelectronic materials' performance.

Diagnostics for a 1.2 kA, 1 MeV, electron induction injector

NASA Astrophysics Data System (ADS)

Houck, T. L.; Anderson, D. E.; Eylon, S.; Henestroza, E.; Lidia, S. M.; Vanecek, D. L.; Westenskow, G. A.; Yu, S. S.

1998-12-01

We are constructing a 1.2 kA, 1 MeV, electron induction injector as part of the RTA program, a collaborative effort between LLNL and LBNL to develop relativistic klystrons for Two-Beam Accelerator applications. The RTA injector will also be used in the development of a high-gradient, low-emittance, electron source and beam diagnostics for the second axis of the Dual Axis Radiographic Hydrodynamic Test (DARHT) Facility. The electron source will be a 3.5″-diameter, thermionic, flat-surface, m-type cathode with a maximum shroud field stress of approximately 165 kV/cm. Additional design parameters for the injector include a pulse length of over 150 ns flat top (1% energy variation), and a normalized edge emittance of less than 200 π-mm-mr. Precise measurement of the beam parameters is required so that performance of the RTA injector can be confidently scaled to the 4 kA, 3 MeV, and 2-microsecond pulse parameters of the DARHT injector. Planned diagnostics include an isolated cathode with resistive divider for direct measurement of current emission, resistive wall and magnetic probe current monitors for measuring beam current and centroid position, capacitive probes for measuring A-K gap voltage, an energy spectrometer, and a pepperpot emittance diagnostic. Details of the injector, beam line, and diagnostics are presented.

Recent progress in nanostructured next-generation field emission devices

NASA Astrophysics Data System (ADS)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Development of an emittance meter and off-line measurements for the SPES project

NASA Astrophysics Data System (ADS)

Montano, Jacobo; Vasquez, Jesus; Andrighetto, Aberto; Poggi, Marco; Bassato, Giorgio; Boscagli, Lucia; Prete, Gianfranco; Conforto, Nicola

2012-02-01

In the framework of the Selective Production of Exotic Species (SPES) project, an emittance meter has been designed and constructed to determine the ion sources operational characteristics. This instrument allows scanning the beam in two orthogonal planes establishing the distribution of the beam spatial density as well as the particles directions. The controls of the scanning sequence and the data collection during the measurements are performed by an appropriated electronic unit. The collected data is then analyzed and the twiss parameters are determined including the emittance for both planes under scrutiny. Finally a user friendly interface is developed that allows a general user to perform the mentioned tasks.

Overcoming the black body limit in plasmonic and graphene near-field thermophotovoltaic systems.

PubMed

Ilic, Ognjen; Jablan, Marinko; Joannopoulos, John D; Celanovic, Ivan; Soljacić, Marin

2012-05-07

Near-field thermophotovoltaic (TPV) systems with carefully tailored emitter-PV properties show large promise for a new temperature range (600 – 1200K) solid state energy conversion, where conventional thermoelectric (TE) devices cannot operate due to high temperatures and far-field TPV schemes suffer from low efficiency and power density. We present a detailed theoretical study of several different implementations of thermal emitters using plasmonic materials and graphene. We find that optimal improvements over the black body limit are achieved for low bandgap semiconductors and properly matched plasmonic frequencies. For a pure plasmonic emitter, theoretically predicted generated power density of 14 W/cm2 and efficiency of 36% can be achieved at 600K (hot-side), for 0.17eV bandgap (InSb). Developing insightful approximations, we argue that large plasmonic losses can, contrary to intuition, be helpful in enhancing the overall near-field transfer. We discuss and quantify the properties of an optimal near-field photovoltaic (PV) diode. In addition, we study plasmons in graphene and show that doping can be used to tune the plasmonic dispersion relation to match the PV cell bangap. In case of graphene, theoretically predicted generated power density of 6(120) W/cm2 and efficiency of 35(40)% can be achieved at 600(1200)K, for 0.17eV bandgap. With the ability to operate in intermediate temperature range, as well as high efficiency and power density, near-field TPV systems have the potential to complement conventional TE and TPV solid state heat-to-electricity conversion devices.

On the feasibility of sub-100 nm rad emittance measurement in plasma accelerators using permanent magnetic quadrupoles

NASA Astrophysics Data System (ADS)

Li, F.; Wu, Y. P.; Nie, Z.; Guo, B.; Zhang, X. H.; Huang, S.; Zhang, J.; Cheng, Z.; Ma, Y.; Fang, Y.; Zhang, C. J.; Wan, Y.; Xu, X. L.; Hua, J. F.; Pai, C. H.; Lu, W.; Gu, Y. Q.

2018-01-01

Low emittance (sub-100 nm rad) measurement of electron beams in plasma accelerators has been a challenging issue for a while. Among various measurement schemes, measurements based on single-shot quad-scan using permanent magnetic quadrupoles (PMQs) has been recently reported with emittance as low as ˜200 nm Weingartner (2012 Phys. Rev. Spec. Top. Accel. Beams 15 111302). However, the accuracy and reliability of this method have not been systematically analyzed. Such analysis is critical for evaluating the potential of sub-100 nm rad emittance measurement using any scheme. In this paper, we analyze the effects of various nonideal physical factors on the accuracy and reliability using the PMQ method. These factors include aberration induced by a high order field, PMQ misalignment and angular fluctuation of incoming beams. Our conclusions are as follows: (i) the aberrations caused by high order fields of PMQs are relatively weak for low emittance measurement as long as the PMQs are properly constructed. A series of PMQs were manufactured and measured at Tsinghua University, and using numerical simulations their high order field effects were found to be negligible . (ii) The largest measurement error of emittance is caused by the angular misalignment between PMQs. For low emittance measurement of ˜100 MeV beams, an angular alignment accuracy of 0.1° is necessary. This requirement can be eased for beams with higher energies. (iii) The transverse position misalignment of PMQs and angular fluctuation of incoming beams only cause a translational and rotational shift of measured signals, respectively, therefore, there is no effect on the measured value of emittance. (iv) The spatial resolution and efficiency of the detection system need to be properly designed to guarantee the accuracy of sub-100 nm rad emittance measurement.

Radiative damping and synchronization in a graphene-based terahertz emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moskalenko, A. S., E-mail: andrey.moskalenko@physik.uni-augsburg.de; Mikhailov, S. A., E-mail: sergey.mikhailov@physik.uni-augsburg.de

2014-05-28

We investigate the collective electron dynamics in a recently proposed graphene-based terahertz emitter under the influence of the radiative damping effect, which is included self-consistently in a molecular dynamics approach. We show that under appropriate conditions synchronization of the dynamics of single electrons takes place, leading to a rise of the oscillating component of the charge current. The synchronization time depends dramatically on the applied dc electric field and electron scattering rate and is roughly inversely proportional to the radiative damping rate that is determined by the carrier concentration and the geometrical parameters of the device. The emission spectra inmore » the synchronized state, determined by the oscillating current component, are analyzed. The effective generation of higher harmonics for large values of the radiative damping strength is demonstrated.« less

Bunch evolution study in optimization of MeV ultrafast electron diffraction

NASA Astrophysics Data System (ADS)

Lu, Xian-Hai; Du, Ying-Chao; Huang, Wen-Hui; Tang, Chuan-Xiang

2014-12-01

Megaelectronvolt ultrafast electron diffraction (UED) is a promising detection tool for ultrafast processes. The quality of diffraction image is determined by the transverse evolution of the probe bunch. In this paper, we study the contributing terms of the emittance and space charge effects to the bunch evolution in the MeV UED scheme, employing a mean-field model with an ellipsoidal distribution as well as particle tracking simulation. The small transverse dimension of the drive laser is found to be critical to improve the reciprocal resolution, exploiting both smaller emittance and larger transverse bunch size before the solenoid. The degradation of the reciprocal spatial resolution caused by the space charge effects should be carefully controlled.

Laser-photofield emission from needle cathodes for low-emittance electron beams.

PubMed

Ganter, R; Bakker, R; Gough, C; Leemann, S C; Paraliev, M; Pedrozzi, M; Le Pimpec, F; Schlott, V; Rivkin, L; Wrulich, A

2008-02-15

Illumination of a ZrC needle with short laser pulses (16 ps, 266 nm) while high voltage pulses (-60 kV, 2 ns, 30 Hz) are applied, produces photo-field emitted electron bunches. The electric field is high and varies rapidly over the needle surface so that quantum efficiency (QE) near the apex can be much higher than for a flat photocathode due to the Schottky effect. Up to 150 pC (2.9 A peak current) have been extracted by photo-field emission from a ZrC needle. The effective emitting area has an estimated radius below 50 microm leading to a theoretical intrinsic emittance below 0.05 mm mrad.

Low-macroscopic field emission properties of wide bandgap copper aluminium oxide nanoparticles for low-power panel applications.

PubMed

Banerjee, Arghya Narayan; Joo, Sang W

2011-09-07

Field emission properties of CuAlO(2) nanoparticles are reported for the first time, with a low turn-on field of approximately 2 V µm(-1) and field enhancement factor around 230. The field emission process follows the standard Fowler-Nordheim tunnelling of cold electron emission. The emission mechanism is found to be a combination of low electron affinity, internal nanostructure and large field enhancement at the low-dimensional emitter tips of the nanoparticles. The field emission properties are comparable to the conventional carbon-based field emitters, and thus can become alternative candidate for field emission devices for low-power panel applications.

Low-macroscopic field emission properties of wide bandgap copper aluminium oxide nanoparticles for low-power panel applications

NASA Astrophysics Data System (ADS)

Narayan Banerjee, Arghya; Joo, Sang W.

2011-09-01

Field emission properties of CuAlO2 nanoparticles are reported for the first time, with a low turn-on field of approximately 2 V µm - 1 and field enhancement factor around 230. The field emission process follows the standard Fowler-Nordheim tunnelling of cold electron emission. The emission mechanism is found to be a combination of low electron affinity, internal nanostructure and large field enhancement at the low-dimensional emitter tips of the nanoparticles. The field emission properties are comparable to the conventional carbon-based field emitters, and thus can become alternative candidate for field emission devices for low-power panel applications.

Threshold self-powered gamma detector for use as a monitor of power in a nuclear reactor

DOEpatents

LeVert, Francis E.; Cox, Samson A.

1978-01-01

A self-powered gamma monitor for placement near the core of a nuclear reactor comprises a lead prism surrounded by a coaxial thin nickel sheet, the combination forming a collector. A coaxial polyethylene electron barrier encloses the collector and is separated from the nickel sheet by a vacuum region. The electron barrier is enclosed by a coaxial stainless steel emitter which, in turn, is enclosed within a lead casing. When the detector is placed in a flux of gamma rays, a measure of the current flow in an external circuit between emitter and collector provides a measure of the power level of the reactor.

Investigating of the Field Emission Performance on Nano-Apex Carbon Fiber and Tungsten Tips

NASA Astrophysics Data System (ADS)

Mousa, Marwan S.; Alnawasreh, Shadi; Madanat, Mazen A.; Al-Rabadi, Anas N.

2015-10-01

Field electron emission measurements have been performed on carbon-based and tungsten microemitters. Several samples of both types of emitters with different apex radii have been obtained employing electrolytic etching techniques using sodium hydroxide (NaOH) solution with different molarities depending on the material used. A suitable, home-built, field electron microscope (FEM) with 10 mm tip to screen separation distance was used to electrically characterize the electron emitters. Measurements were carried out under ultra high vacuum (UHV) conditions with base pressure of 10-9 mbar. The current-voltage characteristics (I-V) presented as Fowler-Nordheim (FN) type plots, and field electron emission images have been recorded. In this work, initial comparison of the field electron emission performance of these micro and nanoemitters has been carried out, with the aim of obtaining a reliable, stable and long life powerful electron source. We compare the apex radii measured from the micrographs obtained from the SEM images to those extracted from the FN-type _I-V_plots for carbon fibers and tungsten tips.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao, E-mail: tsong241@gmail.com; Sites, James R.; Kanevce, Ana

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interfacemore » defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Biodistribution of modular nanotransporter carrying Auger electron emitter and targeted at melanoma cells in murine tumor model

NASA Astrophysics Data System (ADS)

Vorontsova, M. S.; Morozova, N. B.; Karmakova, T. A.; Rosenkranz, A. A.; Slastnikova, T. A.; Petriev, V. M.; Smoryzanova, O. A.; Tischenko, V. K.; Yakubovskaya, R. I.; Kaprin, A. D.; Sobolev, A. S.

2017-09-01

Recombinant modular nanotransporter containing α-melanocyte-stimulating hormone peptide sequence (MNT-MSH) as a ligand module was designed for nucleus-targeted delivery of cytotoxic agents into melanoma cells. MNT-MSH radiolabeled with Auger electron emitter (111In-NOTA-MNT-MSH) showed a high antitumor efficacy in mice bearing syngeneic melanoma after intratumoral (i.t.) injection. This study is aimed at evaluating the biodistribution of the radioconjugate in melanoma tumor model in vivo. 111In-NOTA-MNT-MSH was administered i.t. in C57Bl/6j mice bearing subcutaneously implanted B16-F1 murine melanoma cells, expressing high levels of MCR1. The tissue uptake of radioactivity was determined ex vivo by γ-counter measurements. The intravenous route of administration did not provide a desirable level of radioactivity accumulation in the tumor, possibly, due to a high uptake of the transporter in liver tissue. After i.t. administration 111In-NOTA-MNT-MSH provided a high local retention of radionuclide, ranged from 400 to 350 %ID/g within at least 48 hours post-injection. MNT containing Auger electron emitter and α-MSH peptide as vector ligand could be a promising basis for radiopharmaceutical preparations intended for melanoma treatment.

Arrays of Bundles of Carbon Nanotubes as Field Emitters

NASA Technical Reports Server (NTRS)

Manohara, Harish; Bronkowski, Michael

2007-01-01

Experiments have shown that with suitable choices of critical dimensions, planar arrays of bundles of carbon nanotubes (see figure) can serve as high-current-density field emitter (cold-cathode) electron sources. Whereas some hot-cathode electron sources must be operated at supply potentials of thousands of volts, these cold-cathode sources generate comparable current densities when operated at tens of volts. Consequently, arrays of bundles of carbon nanotubes might prove useful as cold-cathode sources in miniature, lightweight electron-beam devices (e.g., nanoklystrons) soon to be developed. Prior to the experiments, all reported efforts to develop carbon-nanotube-based field-emission sources had yielded low current densities from a few hundred microamperes to a few hundred milliamperes per square centimeter. An electrostatic screening effect, in which taller nanotubes screen the shorter ones from participating in field emission, was conjectured to be what restricts the emission of electrons to such low levels. It was further conjectured that the screening effect could be reduced and thus emission levels increased by increasing the spacing between nanotubes to at least by a factor of one to two times the height of the nanotubes. While this change might increase the emission from individual nanotubes, it would decrease the number of nanotubes per unit area and thereby reduce the total possible emission current. Therefore, to maximize the area-averaged current density, it would be necessary to find an optimum combination of nanotube spacing and nanotube height. The present concept of using an array of bundles of nanotubes arises partly from the concept of optimizing the spacing and height of field emitters. It also arises partly from the idea that single nanotubes may have short lifetimes as field emitters, whereas bundles of nanotubes could afford redundancy so that the loss of a single nanotube would not significantly reduce the overall field emission.

Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics.

PubMed

Kittler, M; Yu, X; Mchedlidze, T; Arguirov, T; Vyvenko, O F; Seifert, W; Reiche, M; Wilhelm, T; Seibt, M; Voss, O; Wolff, A; Fritzsche, W

2007-06-01

Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 microm with an efficiency potential estimated at 1% is demonstrated.

Transverse emittance and phase space program developed for use at the Fermilab A0 Photoinjector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thurman-Keup, R.; Johnson, A.S.; Lumpkin, A.H.

2011-03-01

The Fermilab A0 Photoinjector is a 16 MeV high intensity, high brightness electron linac developed for advanced accelerator R&D. One of the key parameters for the electron beam is the transverse beam emittance. Here we report on a newly developed MATLAB based GUI program used for transverse emittance measurements using the multi-slit technique. This program combines the image acquisition and post-processing tools for determining the transverse phase space parameters with uncertainties. An integral part of accelerator research is a measurement of the beam phase space. Measurements of the transverse phase space can be accomplished by a variety of methods includingmore » multiple screens separated by drift spaces, or by sampling phase space via pepper pots or slits. In any case, the measurement of the phase space parameters, in particular the emittance, can be drastically simplified and sped up by automating the measurement in an intuitive fashion utilizing a graphical interface. At the A0 Photoinjector (A0PI), the control system is DOOCS, which originated at DESY. In addition, there is a library for interfacing to MATLAB, a graphically capable numerical analysis package sold by The Mathworks. It is this graphical package which was chosen as the basis for a graphical phase space measurement system due to its combination of analysis and display capabilities.« less

Stark parameter dependence of the rest core charge of the emitters for multiply charged ions spectral lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Šćepanović, M., E-mail: mara.scepanovic@gmail.com; Purić, J.

2016-03-25

Stark width and shift simultaneous dependence on the upper level ionization potential and rest core charge of the emitter has been evaluated and discussed. It has been verified that the found relations, connecting Stark broadening parameters with upper level ionization potential and rest core charge of the emitters for particular electron temperature and density, can be used for prediction of Stark line width and shift data in case of ions for which observed data, or more detailed calculations, are not yet available. Stark widths and shifts published data are used to demonstrate the existence of other kinds of regularities withinmore » similar spectra of different elements and their ionization stages. The emphasis is on the Stark parameter dependence on the upper level ionization potential and on the rest core charge for the lines from similar spectra of multiply charged ions. The found relations connecting Stark widths and shift parameters with upper level ionization potential, rest core charge and electron temperature were used for a prediction of new Stark broadening data, thus avoiding much more complicated procedures.« less

Carbon incorporation in InP grown by metalorganic chemical vapor deposition and application to InP/InGaAs heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Stockman, S. A.; Fresina, M. T.; Hartmann, Q. J.; Hanson, A. W.; Gardner, N. F.; Baker, J. E.; Stillman, G. E.

1994-04-01

The incorporation of residual carbon has been studied for InP grown at low temperatures using TMIn and PH3 by low-pressure metalorganic chemical vapor deposition. n-type conduction is observed with electron concentrations as high as 1×1018 cm-3, and the electrical activation efficiency is 5%-15%. Carbon incorporation is found to be highly dependent on substrate temperature, suggesting that the rate-limiting step is desorption of CHy (0≤y≤3) from the surface during growth. Hydrogen is also incorporated in the layers during growth. The electron mobilities are lower for C-doped InP than for Si-doped InP. InP/InGaAs heterojunction bipolar transistors with C as the p-type base dopant and either Si or C as the n-type emitter dopant have been fabricated and compared. Devices with a carbon-doped base and emitter showed degraded performance, likely as a result of deep levels incorporated during growth of the emitter.

Single Crystal Diamond Needle as Point Electron Source.

PubMed

Kleshch, Victor I; Purcell, Stephen T; Obraztsov, Alexander N

2016-10-12

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single Crystal Diamond Needle as Point Electron Source

NASA Astrophysics Data System (ADS)

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-10-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single-stage plasma-based correlated energy spread compensation for ultrahigh 6D brightness electron beams

PubMed Central

Manahan, G. G.; Habib, A. F.; Scherkl, P.; Delinikolas, P.; Beaton, A.; Knetsch, A.; Karger, O.; Wittig, G.; Heinemann, T.; Sheng, Z. M.; Cary, J. R.; Bruhwiler, D. L.; Rosenzweig, J. B.; Hidding, B.

2017-01-01

Plasma photocathode wakefield acceleration combines energy gains of tens of GeV m−1 with generation of ultralow emittance electron bunches, and opens a path towards 5D-brightness orders of magnitude larger than state-of-the-art. This holds great promise for compact accelerator building blocks and advanced light sources. However, an intrinsic by-product of the enormous electric field gradients inherent to plasma accelerators is substantial correlated energy spread—an obstacle for key applications such as free-electron-lasers. Here we show that by releasing an additional tailored escort electron beam at a later phase of the acceleration, when the witness bunch is relativistically stable, the plasma wave can be locally overloaded without compromising the witness bunch normalized emittance. This reverses the effective accelerating gradient, and counter-rotates the accumulated negative longitudinal phase space chirp of the witness bunch. Thereby, the energy spread is reduced by an order of magnitude, thus enabling the production of ultrahigh 6D-brightness beams. PMID:28580954

Innovative single-shot diagnostics for electrons from laser wakefield acceleration at FLAME

NASA Astrophysics Data System (ADS)

Bisesto, F. G.; Anania, M. P.; Cianchi, A.; Chiadroni, E.; Curcio, A.; Ferrario, M.; Pompili, R.; Zigler, A.

2017-07-01

Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (> 100 GV/m), enabling acceleration of electrons to GeV energy in few centimeters. Here we present all the plasma related activities currently underway at SPARC_LAB exploiting the high power laser FLAME. In particular, we will give an overview of the single shot diagnostics employed: Electro Optic Sampling (EOS) for temporal measurement and Optical Transition Radiation (OTR) for an innovative one shot emittance measurements. In detail, the EOS technique has been employed to measure for the first time the longitudinal profile of electric field of fast electrons escaping from a solid target, driving the ions and protons acceleration, and to study the impact of using different target shapes. Moreover, a novel scheme for one shot emittance measurements based on OTR, developed and tested at SPARC_LAB LINAC, used in an experiment on electrons from laser wakefield acceleration still undergoing, will be shown.

Investigation of the temperature dependent field emission from individual ZnO nanowires for evidence of field-induced hot electrons emission.

PubMed

Chen, Yicong; Zhang, Zhipeng; Li, Zhi-Bing; She, Juncong; Deng, Shaozhi; Xu, Ning-Sheng; Chen, Jun

2018-06-27

ZnO nanowires as field emitters have important applications in flat panel display and X-ray source. Understanding the intrinsic field emission mechanism is crucial for further improving the performance of ZnO nanowire field emitters. In this article, the temperature dependent field emission from individual ZnO nanowires was investigated by an in-situ measurement in ultra-high vacuum. The divergent temperature-dependent Fowler-Nordheim plots is found in the low field region. A field-induced hot electrons emission model that takes into account penetration length is proposed to explain the results. The carrier density and temperature dependence of the field-induced hot electrons emission current are derived theoretically. The obtained results are consistent with the experimental results, which could be attributed to the variation of effective electron temperature. All of these are important for a better understanding on the field emission process of semiconductor nanostructures. © 2018 IOP Publishing Ltd.

Diagnostic for a high-repetition rate electron photo-gun and first measurements

NASA Astrophysics Data System (ADS)

Filippetto, D.; Doolittle, L.; Huang, G.; Norum, E.; Portmann, G.; Qian, H.; Sannibale, F.

2015-05-01

The APEX electron source at LBNL combines the high-repetition-rate with the high beam brightness typical of photoguns, delivering low emittance electron pulses at MHz frequency. Proving the high beam quality of the beam is an essential step for the success of the experiment, opening the doors of the high average power to brightness-hungry applications as X-Ray FELs, MHz ultrafast electron diffraction etc.. As first step, a complete characterization of the beam parameters is foreseen at the Gun beam energy of 750 keV. Diagnostics for low and high current measurements have been installed and tested, and measurements of cathode lifetime and thermal emittance in a RF environment with mA current performed. The recent installation of a double slit system, a deflecting cavity and a high precision spectrometer, allow the exploration of the full 6D phase space. Here we discuss the present layout of the machine and future upgrades, showing the latest results at low and high repetition rate, together with the tools and techniques used.

Triarylborane-Based Materials for OLED Applications.

PubMed

Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

2017-09-13

Multidisciplinary research on organic fluorescent molecules has been attracting great interest owing to their potential applications in biomedical and material sciences. In recent years, electron deficient systems have been increasingly incorporated into fluorescent materials. Triarylboranes with the empty p orbital of their boron centres are electron deficient and can be used as strong electron acceptors in conjugated organic fluorescent materials. Moreover, their applications in optoelectronic devices, energy harvesting materials and anion sensing, due to their natural Lewis acidity and remarkable solid-state fluorescence properties, have also been investigated. Furthermore, fluorescent triarylborane-based materials have been commonly utilized as emitters and electron transporters in organic light emitting diode (OLED) applications. In this review, triarylborane-based small molecules and polymers will be surveyed, covering their structure-property relationships, intramolecular charge transfer properties and solid-state fluorescence quantum yields as functional emissive materials in OLEDs. Also, the importance of the boron atom in triarylborane compounds is emphasized to address the key issues of both fluorescent emitters and their host materials for the construction of high-performance OLEDs.

Optical Coating Performance and Thermal Structure Design for Heat Reflectors of JWST Electronic Control Unit

NASA Technical Reports Server (NTRS)

Quijada, Manuel A.; Threat, Felix; Garrison, Matt; Perrygo, Chuck; Bousquet, Robert; Rashford, Robert

2008-01-01

The James Webb Space Telescope (JWST) consists of an infrared-optimized Optical Telescope Element (OTE) that is cooled down to 40 degrees Kelvin. A second adjacent component to the OTE is the Integrated Science Instrument Module, or ISIM. This module includes the electronic compartment, which provides the mounting surfaces and ambient thermally controlled environment for the instrument control electronics. Dissipating the 200 watts generated from the ISIM structure away from the OTE is of paramount importance so that the spacecraft's own heat does not interfere with the infrared light detected from distant cosmic sources. This technical challenge is overcome by a thermal subsystem unit that provides passive cooling to the ISIM control electronics. The proposed design of this thermal radiator consists of a lightweight structure made out of composite materials and low-emittance metal coatings. In this paper, we will present characterizations of the coating emittance, bidirectional reflectance, and mechanical structure design that will affect the performance of this passive cooling system.

Single-stage plasma-based correlated energy spread compensation for ultrahigh 6D brightness electron beams

NASA Astrophysics Data System (ADS)

Manahan, G. G.; Habib, A. F.; Scherkl, P.; Delinikolas, P.; Beaton, A.; Knetsch, A.; Karger, O.; Wittig, G.; Heinemann, T.; Sheng, Z. M.; Cary, J. R.; Bruhwiler, D. L.; Rosenzweig, J. B.; Hidding, B.

2017-06-01

Plasma photocathode wakefield acceleration combines energy gains of tens of GeV m-1 with generation of ultralow emittance electron bunches, and opens a path towards 5D-brightness orders of magnitude larger than state-of-the-art. This holds great promise for compact accelerator building blocks and advanced light sources. However, an intrinsic by-product of the enormous electric field gradients inherent to plasma accelerators is substantial correlated energy spread--an obstacle for key applications such as free-electron-lasers. Here we show that by releasing an additional tailored escort electron beam at a later phase of the acceleration, when the witness bunch is relativistically stable, the plasma wave can be locally overloaded without compromising the witness bunch normalized emittance. This reverses the effective accelerating gradient, and counter-rotates the accumulated negative longitudinal phase space chirp of the witness bunch. Thereby, the energy spread is reduced by an order of magnitude, thus enabling the production of ultrahigh 6D-brightness beams.

Ion Emittance Growth Due to Focusing Modulation from Slipping Electron Bunch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, G.

2015-02-17

Low energy RHIC operation has to be operated at an energy ranging from γ = 4.1 to γ = 10. The energy variation causes the change of revolution frequency. While the rf system for the circulating ion will operate at an exact harmonic of the revolution frequency (h=60 for 4.5 MHz rf and h=360 for 28 MHz rf.), the superconducting rf system for the cooling electron beam does not have a frequency tuning range that is wide enough to cover the required changes of revolution frequency. As a result, electron bunches will sit at different locations along the ion bunchmore » from turn to turn, i.e. the slipping of the electron bunch with respect to the circulating ion bunch. At cooling section, ions see a coherent focusing force due to the electrons’ space charge, which differs from turn to turn due to the slipping. We will try to estimate how this irregular focusing affects the transverse emittance of the ion bunch.« less

Thrust and Performance Study of Micro Pulsed Plasma Thrusters

DTIC Science & Technology

2010-03-01

Due to the high- voltage potential, numerous electrons are able to collect in a small area. As the collection of the electrons grows, the ...quasi- neutral plasma removes the need to have a second emitter of free electrons to neutralize the plasma like in the Hall thrusters. PPTs and µPPTs...surface of the cathode. The micro-protrusions

Directional gamma detector

DOEpatents

LeVert, Francis E.; Cox, Samson A.

1981-01-01

An improved directional gamma radiation detector has a collector sandwiched etween two layers of insulation of varying thicknesses. The collector and insulation layers are contained within an evacuated casing, or emitter, which releases electrons upon exposure to gamma radiation. Delayed electrons and electrons entering the collector at oblique angles are attenuated as they pass through the insulation layers on route to the collector.

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Eye safe high power laser diode in the 1410-1550nm range

NASA Astrophysics Data System (ADS)

Boucart, Julien; de Largy, Brian; Kearley, Mark; Lichtenstein, Norbert

2010-02-01

The demand for high power lasers emitting in the 14xx-15xxnm range is growing for applications in fields such as medical or homeland security. We demonstrate high power laser diodes with emission at 1430, 1470 and 1560 nm. Single multimode emitters at 1470nm emit about 3.5W in CW operation. Power conversion efficiency can reach values as high as 38.5%. With this base material, single and multi-emitter fiber coupled modules are built. Additionally, bars on passive and microchannel coolers are fabricated that deliver 25W and 38W respectively in CW mode, while obtaining more than 80 W in pulsed mode. All reliability tests show an outstanding stability of the material with no signs of wearout after 3750 hrs under strong acceleration conditions.

Innovative single-shot diagnostics for electrons accelerated through laser-plasma interaction at FLAME

NASA Astrophysics Data System (ADS)

Bisesto, F. G.; Anania, M. P.; Chiadroni, E.; Cianchi, A.; Costa, G.; Curcio, A.; Ferrario, M.; Galletti, M.; Pompili, R.; Schleifer, E.; Zigler, A.

2017-05-01

Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (> 100 GV/m), enabling acceleration of electrons to GeV energy in few centimeters. Here we present all the plasma related activities currently underway at SPARC LAB exploiting the high power laser FLAME. In particular, we will give an overview of the single shot diagnostics employed: Electro Optic Sampling (EOS) for temporal measurement and optical transition radiation (OTR) for an innovative one shot emittance measurements. In detail, the EOS technique has been employed to measure for the first time the longitudinal profile of electric field of fast electrons escaping from a solid target, driving the ions and protons acceleration, and to study the impact of using different target shapes. Moreover, a novel scheme for one shot emittance measurements based on OTR, developed and tested at SPARC LAB LINAC, will be shown.

Sources of Emittance in RF Photocathode Injectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dowell, David

2016-12-11

Advances in electron beam technology have been central to creating the current generation of x-ray free electron lasers and ultra-fast electron microscopes. These once exotic devices have become essential tools for basic research and applied science. One important beam technology for both is the electron source which, for many of these instruments, is the photocathode RF gun. The invention of the photocathode gun and the concepts of emittance compensation and beam matching in the presence of space charge and RF forces have made these high-quality beams possible. Achieving even brighter beams requires a taking a finer resolution view of themore » electron dynamics near the cathode during photoemission and the initial acceleration of the beam. In addition, the high brightness beam is more sensitive to degradation by the optical aberrations of the gun’s RF and magnetic lenses. This paper discusses these topics including the beam properties due to fundamental photoemission physics, space charge effects close to the cathode, and optical distortions introduced by the RF and solenoid fields. Analytic relations for these phenomena are derived and compared with numerical simulations.« less

Method to fabricate portable electron source based on nitrogen incorporated ultrananocrystalline diamond (N-UNCD)

DOEpatents

Sumant, Anirudha V.; Divan, Ralu; Posada, Chrystian M.; Castano, Carlos H.; Grant, Edwin J.; Lee, Hyoung K.

2016-03-29

A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube "forest" (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.

Emittance study of a 28 GHz electron cyclotron resonance ion source for the Rare Isotope Science Project superconducting linear accelerator.

PubMed

Park, Bum-Sik; Hong, In-Seok; Jang, Ji-Ho; Jin, Hyunchang; Choi, Sukjin; Kim, Yonghwan

2016-02-01

A 28 GHz electron cyclotron resonance (ECR) ion source is being developed for use as an injector for the superconducting linear accelerator of the Rare Isotope Science Project. Beam extraction from the ECR ion source has been simulated using the KOBRA3-INP software. The simulation software can calculate charged particle trajectories in three dimensional complex magnetic field structures, which in this case are formed by the arrangement of five superconducting magnets. In this study, the beam emittance is simulated to understand the effects of plasma potential, mass-to-charge ratio, and spatial distribution. The results of these simulations and their comparison to experimental results are presented in this paper.

Robust Low-Cost Cathode for Commercial Applications

NASA Technical Reports Server (NTRS)

Patterson, Michael J.

2007-01-01

Under funding from the NASA Commercial Technology Office, a cathode assembly was designed, developed, fabricated, and tested for use in plasma sources for ground-based materials processing applications. The cathode development activity relied on the large prior NASA investment and successful development of high-current, high-efficiency, long-life hollow cathodes for use on the International Space Station Plasma Contactor System. The hollow cathode was designed and fabricated based on known engineering criteria and manufacturing processes for compatibility with the requirements of the plasma source. The transfer of NASA GRC-developed hollow cathode technology for use as an electron emitter in the commercial plasma source is anticipated to yield a significant increase in process control, while eliminating the present issues of electron emitter lifetime and contamination.

Cold electron beams from cryocooled, alkali antimonide photocathodes

DOE PAGES

Cultrera, L.; Karkare, S.; Lee, H.; ...

2015-11-30

In this study we report on the generation of cold electron beams using a Cs 3Sb photocathode grown by codeposition of Sb and Cs. By cooling the photocathode to 90 K we demonstrate a significant reduction in the mean transverse energy validating the long-standing speculation that the lattice temperature contributes to limiting the mean transverse energy or intrinsic emittance near the photoemission threshold, opening new frontiers in generating ultrabright beams. At 90 K, we achieve a record low intrinsic emittance of 0.2 μm (rms) per mm of laser spot diameter from an ultrafast (subpicosecond) photocathode with quantum efficiency greater thanmore » 7 × 10 -5 using a visible laser wavelength of 690 nm.« less

Plasma treatment for producing electron emitters

DOEpatents

Coates, Don Mayo; Walter, Kevin Carl

2001-01-01

Plasma treatment for producing carbonaceous field emission electron emitters is disclosed. A plasma of ions is generated in a closed chamber and used to surround the exposed surface of a carbonaceous material. A voltage is applied to an electrode that is in contact with the carbonaceous material. This voltage has a negative potential relative to a second electrode in the chamber and serves to accelerate the ions toward the carbonaceous material and provide an ion energy sufficient to etch the exposed surface of the carbonaceous material but not sufficient to result in the implantation of the ions within the carbonaceous material. Preferably, the ions used are those of an inert gas or an inert gas with a small amount of added nitrogen.

Gamma compensated, self powered neutron detector

DOEpatents

Brown, Donald P.

1977-01-01

An improved, self-powered, gamma compensated, neutron detector having two electrically conductive concentric cylindrical electrodes and a central rod emitter formed from a material which emits beta particles when bombarded by neutrons. The outer electrode and emitter are maintained at a common potential and the neutron representative current is furnished at the inner cylindrical electrode which serves as a collector. The two concentric cylindrical electrodes are designed to exhibit substantially equal electron emission induced by Compton scattering under neutron bombardment to supply the desired gamma compensation.

Magnetic field of longitudinal gradient bend

NASA Astrophysics Data System (ADS)

Aiba, Masamitsu; Böge, Michael; Ehrlichman, Michael; Streun, Andreas

2018-06-01

The longitudinal gradient bend is an effective method for reducing the natural emittance in light sources. It is, however, not a common element. We have analyzed its magnetic field and derived a set of formulae. Based on the derivation, we discuss how to model the longitudinal gradient bend in accelerator codes that are used for designing electron storage rings. Strengths of multipole components can also be evaluated from the formulae, and we investigate the impact of higher order multipole components in a very low emittance lattice.

Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT’S

DTIC Science & Technology

1998-08-01

10-20 V ) have been demonstrated, with power added efficiencies between 10% (around 1 W) and 50% (around 20 mW) at 60 GHz. For higher frequencies...IEDM98, pp. 695-698, S. Francisco, CA, December 6-9, 1998. G. Meneghesso, A. Neviani , R. Oesterholt, M. Matloubian, T. Liu, J. Brown, C. Canali and...8217 / / ’ ’ / / " / s / collector-to-emitter voltage VCE ( V ) Figure 1.1: Collector current, Ic vs. the collector to emitter voltage VCE at

EMIIM Wetting Properties of & Their Effect on Electrospray Thruster Design

DTIC Science & Technology

2012-03-21

materials can be characterized using the surface tension and contact or “wetting" angle formed when a liquid droplet comes in contact with a solid surface...Illustration of the instantaneous dipole formed by electron motion in a hy- drogen atom(left) and how these instantaneous dipoles can attract each other...the extractor grid and of like charge to the emitter. A Taylor cone formed using an internally wetted emitter and the ionic liquid BMI-BG4 is shown in

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and leadmore » to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Highly efficient and stable white organic light emitting diode base on double recombination zones of phosphorescent blue/orange emitters.

PubMed

Lee, Seok Jae; Koo, Ja Ryong; Lim, Dong Hwan; Park, Hye Rim; Kim, Young Kwan; Ha, Yunkyoung

2011-08-01

We demonstrated efficient and stable white phosphorescent organic light-emitting diodes (OLEDs) with double-emitting layers (D-EMLs), which were comprised of two emissive layers with a hole transport-type host of N,N'-dicarbazolyl-3,5-benzene (mCP) and a electron transport-type host of 2,2',2"-(1,3,5-benzenetryl)tris(1-phenyl)-1H-benzimidazol (TPBi) with blue/orange emitters, respectively. We fabricated two type white devices with single emitting layer (S-EML) and D-EML of orange emitter, maintaining double recombination zone of blue emitter. In addition, the device architecture was developed to confine excitons inside the D-EMLs and to manage triplet excitons by controlling the charge injection. As a result, light-emitting performances of white OLED with D-EMLs were improved and showed the steady CIE coordinates compared to that with S-EML of orange emitter, which demonstrated the maximum luminous efficiency and external quantum efficiency were 21.38 cd/A and 11.09%. It also showed the stable white emission with CIE(x,y) coordinates from (x = 0.36, y = 0.37) at 6 V to (x = 0.33, y = 0.38) at 12 V.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

NASA Astrophysics Data System (ADS)

van Tilborg, J.; Barber, S. K.; Benedetti, C.; Schroeder, C. B.; Isono, F.; Tsai, H.-E.; Geddes, C. G. R.; Leemans, W. P.

2018-05-01

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this manuscript, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam. An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Tilborg, J.; Barber, S. K.; Benedetti, C.

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

Monte Carlo calculation of the sensitivity of a commercial dose calibrator to gamma and beta radiation.

PubMed

Laedermann, Jean-Pascal; Valley, Jean-François; Bulling, Shelley; Bochud, François O

2004-06-01

The detection process used in a commercial dose calibrator was modeled using the GEANT 3 Monte Carlo code. Dose calibrator efficiency for gamma and beta emitters, and the response to monoenergetic photons and electrons was calculated. The model shows that beta emitters below 2.5 MeV deposit energy indirectly in the detector through bremsstrahlung produced in the chamber wall or in the source itself. Higher energy beta emitters (E > 2.5 MeV) deposit energy directly in the chamber sensitive volume, and dose calibrator sensitivity increases abruptly for these radionuclides. The Monte Carlo calculations were compared with gamma and beta emitter measurements. The calculations show that the variation in dose calibrator efficiency with measuring conditions (source volume, container diameter, container wall thickness and material, position of the source within the calibrator) is relatively small and can be considered insignificant for routine measurement applications. However, dose calibrator efficiency depends strongly on the inner-wall thickness of the detector.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE PAGES

van Tilborg, J.; Barber, S. K.; Benedetti, C.; ...

2018-03-13

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

Emittance of short-pulsed high-current ion beams formed from the plasma of the electron cyclotron resonance discharge sustained by high-power millimeter-wave gyrotron radiation.

PubMed

Razin, S; Zorin, V; Izotov, I; Sidorov, A; Skalyga, V

2014-02-01

We present experimental results on measuring the emittance of short-pulsed (≤100 μs) high-current (80-100 mA) ion beams of heavy gases (Nitrogen, Argon) formed from a dense plasma of an ECR source of multiply charged ions (MCI) with quasi-gas-dynamic mode of plasma confinement in a magnetic trap of simple mirror configuration. The discharge was created by a high-power (90 kW) pulsed radiation of a 37.5-GHz gyrotron. The normalized emittance of generated ion beams of 100 mA current was (1.2-1.3) π mm mrad (70% of ions in the beams). Comparing these results with those obtained using a cusp magnetic trap, it was concluded that the structure of the trap magnetic field lines does not exert a decisive influence on the emittance of ion beams in the gas-dynamic ECR source of MCI.

Emittance of short-pulsed high-current ion beams formed from the plasma of the electron cyclotron resonance discharge sustained by high-power millimeter-wave gyrotron radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razin, S., E-mail: sevraz@appl.sci-nnov.ru; Zorin, V.; Izotov, I.

2014-02-15

We present experimental results on measuring the emittance of short-pulsed (≤100 μs) high-current (80–100 mA) ion beams of heavy gases (Nitrogen, Argon) formed from a dense plasma of an ECR source of multiply charged ions (MCI) with quasi-gas-dynamic mode of plasma confinement in a magnetic trap of simple mirror configuration. The discharge was created by a high-power (90 kW) pulsed radiation of a 37.5-GHz gyrotron. The normalized emittance of generated ion beams of 100 mA current was (1.2–1.3) π mm mrad (70% of ions in the beams). Comparing these results with those obtained using a cusp magnetic trap, it was concluded thatmore » the structure of the trap magnetic field lines does not exert a decisive influence on the emittance of ion beams in the gas-dynamic ECR source of MCI.« less

Characterization of the International Linear Collider damping ring optics

NASA Astrophysics Data System (ADS)

Shanks, J.; Rubin, D. L.; Sagan, D.

2014-10-01

A method is presented for characterizing the emittance dilution and dynamic aperture for an arbitrary closed lattice that includes guide field magnet errors, multipole errors and misalignments. This method, developed and tested at the Cornell Electron Storage Ring Test Accelerator (CesrTA), has been applied to the damping ring lattice for the International Linear Collider (ILC). The effectiveness of beam based emittance tuning is limited by beam position monitor (BPM) measurement errors, number of corrector magnets and their placement, and correction algorithm. The specifications for damping ring magnet alignment, multipole errors, number of BPMs, and precision in BPM measurements are shown to be consistent with the required emittances and dynamic aperture. The methodology is then used to determine the minimum number of position monitors that is required to achieve the emittance targets, and how that minimum depends on the location of the BPMs. Similarly, the maximum tolerable multipole errors are evaluated. Finally, the robustness of each BPM configuration with respect to random failures is explored.

Up-Conversion Intersystem Crossing Rates in Organic Emitters for Thermally Activated Delayed Fluorescence: Impact of the Nature of Singlet vs Triplet Excited States.

PubMed

Samanta, Pralok K; Kim, Dongwook; Coropceanu, Veaceslav; Brédas, Jean-Luc

2017-03-22

The rates for up-conversion intersystem crossing (UISC) from the T 1 state to the S 1 state are calculated for a series of organic emitters with an emphasis on thermally activated delayed fluorescence (TADF) materials. Both the spin-orbit coupling and the energy difference between the S 1 and T 1 states (ΔE ST ) are evaluated, at the density functional theory (DFT) and time-dependent DFT levels. The calculated UISC rates and ΔE ST values are found to be in good agreement with available experimental data. Our results underline that small ΔE ST values and sizable spin-orbit coupling matrix elements have to be simultaneously realized in order to facilitate UISC and ultimately TADF. Importantly, the spatial separation of the highest occupied and lowest unoccupied molecular orbitals of the emitter, a widely accepted strategy for the design of TADF molecules, does not necessarily lead to a sufficient reduction in ΔE ST ; in fact, either a significant charge-transfer (CT) contribution to the T 1 state or a minimal energy difference between the local-excitation and charge-transfer triplet states is required to achieve a small ΔE ST . Also, having S 1 and T 1 states of a different nature is found to strongly enhance spin-orbit coupling, which is consistent with the El-Sayed rule for ISC rates. Overall, our results indicate that having either similar energies for the local-excitation and charge-transfer triplet states or the right balance between a substantial CT contribution to T 1 and somewhat different natures of the S 1 and T 1 states, paves the way toward UISC enhancement and thus TADF efficiency improvement.

Zr-ZrO2 cermet solar coatings designed by modelling calculations and deposited by dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Zhang, Qi-Chu; Hadavi, M. S.; Lee, K.-D.; Shen, Y. G.

2003-03-01

High solar performance Zr-ZrO2 cermet solar coatings were designed using a numerical computer model and deposited experimentally. The layer thickness and Zr metal volume fraction for the Zr-ZrO2 cermet solar selective coatings on a Zr or Al reflector with a surface ZrO2 or Al2O3 anti-reflection layer were optimized to achieve maximum photo-thermal conversion efficiency at 80°C under concentration factors of 1-20 using the downhill simplex method in multi-dimensions in the numerical calculation. The dielectric function and the complex refractive index of Zr-ZrO2 cermet materials were calculated using Sheng's approximation. Optimization calculations show that Al2O3/Zr-ZrO2/Al solar coatings with two cermet layers and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimized Al2O3/Zr-ZrO2/Al solar coating film with two cermet layers has a high solar absorptance value of 0.97 and low hemispherical emittance value of 0.05 at 80°C for a concentration factor of 2. The Al2O3/Zr-ZrO2/Al solar selective coatings with two cermet layers were deposited using dc magnetron sputtering technology. During the deposition of Zr-ZrO2 cermet layer, a Zr metallic target was run in a gas mixture of argon and oxygen. By control of oxygen flow rate the different metal volume fractions in the cermet layers were achieved using dc reactive sputtering. A solar absorptance of 0.96 and normal emittance of 0.05 at 80°C were achieved.

The NASA thermionic-conversion (TEC-ART) program

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

The current emphasis is on out-of-core thermionic conversion (TEC). The additional degrees of freedom offer new potentialities, but high-temperature material effects determine the level and lifetime of TEC performance: New electrodes not only raise power outputs but also maintain them regardless of emitter-vapor deposition on collectors. In addition, effective electrodes serve compatibly with hot-shell alloys. Space TEC withstands external and internal high-temperature vaporization problems, and terrestrial TEC tolerates hot corrosive atmospheres outside and near-vacuum inside. Finally, reduction of losses between converter electrodes is essential even though rather demanding geometries appear to be required for some modes of enhanced operation.

An advanced plasmonic cermet solar absorber for high temperature solar energy conversion applications

NASA Astrophysics Data System (ADS)

Bilokur, M.; Gentle, A.; Arnold, M.; Cortie, M.; Smith, G.

2017-08-01

Cermet coatings based on nanoparticles of Au or Ag in a stable dielectric matrix provide a combination of spectral-selectivity and microstructural stability at elevated temperatures. The nanoparticles provide an absorption peak due to their localized surface plasmon resonance and the dielectric matrix provides red-shifting and intrinsic absorption from defects. The matrix and two separated cermet layers combined add mechanical support, greater thermal stability and extra absorptance. The coatings may be prepared by magnetron sputtering. They have solar absorptance ranging between 91% and 97% with low thermal emittance making them suitable for application in solar thermal conversion installations.

Beyond injection: Trojan horse underdense photocathode plasma wakefield acceleration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hidding, B.; Rosenzweig, J. B.; Xi, Y.

2012-12-21

An overview on the underlying principles of the hybrid plasma wakefield acceleration scheme dubbed 'Trojan Horse' acceleration is given. The concept is based on laser-controlled release of electrons directly into a particle-beam-driven plasma blowout, paving the way for controlled, shapeable electron bunches with ultralow emittance and ultrahigh brightness. Combining the virtues of a low-ionization-threshold underdense photocathode with the GV/m-scale electric fields of a practically dephasing-free beam-driven plasma blowout, this constitutes a 4th generation electron acceleration scheme. It is applicable as a beam brightness transformer for electron bunches from LWFA and PWFA systems alike. At FACET, the proof-of-concept experiment 'E-210: Trojanmore » Horse Plasma Wakefield Acceleration' has recently been approved and is in preparation. At the same time, various LWFA facilities are currently considered to host experiments aiming at stabilizing and boosting the electron bunch output quality via a trojan horse afterburner stage. Since normalized emittance and brightness can be improved by many orders of magnitude, the scheme is an ideal candidate for light sources such as free-electron-lasers and those based on Thomson scattering and betatron radiation alike.« less

Design rules for charge-transport efficient host materials for phosphorescent organic light-emitting diodes.

PubMed

May, Falk; Al-Helwi, Mustapha; Baumeier, Björn; Kowalsky, Wolfgang; Fuchs, Evelyn; Lennartz, Christian; Andrienko, Denis

2012-08-22

The use of blue phosphorescent emitters in organic light-emitting diodes (OLEDs) imposes demanding requirements on a host material. Among these are large triplet energies, the alignment of levels with respect to the emitter, the ability to form and sustain amorphous order, material processability, and an adequate charge carrier mobility. A possible design strategy is to choose a π-conjugated core with a high triplet level and to fulfill the other requirements by using suitable substituents. Bulky substituents, however, induce large spatial separations between conjugated cores, can substantially reduce intermolecular electronic couplings, and decrease the charge mobility of the host. In this work we analyze charge transport in amorphous 2,8-bis(triphenylsilyl)dibenzofuran, an electron-transporting material synthesized to serve as a host in deep-blue OLEDs. We show that mesomeric effects delocalize the frontier orbitals over the substituents recovering strong electronic couplings and lowering reorganization energies, especially for electrons, while keeping energetic disorder small. Admittance spectroscopy measurements reveal that the material has indeed a high electron mobility and a small Poole-Frenkel slope, supporting our conclusions. By linking electronic structure, molecular packing, and mobility, we provide a pathway to the rational design of hosts with high charge mobilities.

Heuristic for Learning Common Emitter Amplification with Bipolar Transistors

ERIC Educational Resources Information Center

Staffas, Kjell

2017-01-01

Mathematics in engineering education causes many thresholds in the courses because of the demand of abstract conceptualisation. Electronics depend heavily on more or less complex mathematics. Therefore the concepts of analogue electronics are hard to learn since a great deal of students struggle with the calculations and procedures needed. A…

Auger Emitting Radiopharmaceuticals for Cancer Therapy

NASA Astrophysics Data System (ADS)

Falzone, Nadia; Cornelissen, Bart; Vallis, Katherine A.

Radionuclides that emit Auger electrons have been of particular interest as therapeutic agents. This is primarily due to the short range in tissue, controlled linear paths and high linear energy transfer of these particles. Taking into consideration that ionizations are clustered within several cubic nanometers around the point of decay the possibility of incorporating an Auger emitter in close proximity to the cancer cell DNA has immense therapeutic potential thus making nuclear targeted Auger-electron emitters ideal for precise targeting of cancer cells. Furthermore, many Auger-electron emitters also emit γ-radiation, this property makes Auger emitting radionuclides a very attractive option as therapeutic and diagnostic agents in the molecular imaging and management of tumors. The first requirement for the delivery of Auger emitting nuclides is the definition of suitable tumor-selective delivery vehicles to avoid normal tissue toxicity. One of the main challenges of targeted radionuclide therapy remains in matching the physical and chemical characteristics of the radionuclide and targeting moiety with the clinical character of the tumor. Molecules and molecular targets that have been used in the past can be classified according to the carrier molecule used to deliver the Auger-electron-emitting radionuclide. These include (1) antibodies, (2) peptides, (3) small molecules, (4) oligonucleotides and peptide nucleic acids (PNAs), (5) proteins, and (6) nanoparticles. The efficacy of targeted radionuclide therapy depends greatly on the ability to increase intranuclear incorporation of the radiopharmaceutical without compromising toxicity. Several strategies to achieve this goal have been proposed in literature. The possibility of transferring tumor therapy based on the emission of Auger electrons from experimental models to patients has vast therapeutic potential, and remains a field of intense research.

Radioimmunotherapy of cancer with high linear energy transfer (LET) radiation delivered by radionuclides emitting α-particles or Auger electrons.

PubMed

Aghevlian, Sadaf; Boyle, Amanda J; Reilly, Raymond M

2017-01-15

Radioimmunotherapy (RIT) aims to selectively deliver radionuclides emitting α-particles, β-particles or Auger electrons to tumors by conjugation to monoclonal antibodies (mAbs) that recognize tumor-associated antigens/receptors. The approach has been most successful for treatment of non-Hodgkin's B-cell lymphoma but challenges have been encountered in extending these promising results to the treatment of solid malignancies. These challenges include the low potency of β-particle emitters such as 131 I, 177 Lu or 90 Y which have been commonly conjugated to the mAbs, due to their low linear energy transfer (LET=0.1-1.0keV/μm). Furthermore, since the β-particles have a 2-10mm range, there has been dose-limiting non-specific toxicity to hematopoietic stem cells in the bone marrow (BM) due to the cross-fire effect. Conjugation of mAbs to α-particle-emitters (e.g. 225 Ac, 213 Bi, 212 Pb or 211 At) or Auger electron-emitters (e.g. 111 In, 67 Ga, 123 I or 125 I) would increase the potency of RIT due to their high LET (50-230keV/μm and 4 to 26keV/μm, respectively). In addition, α-particles have a range in tissues of 28-100μm and Auger electrons are nanometer in range which greatly reduces or eliminates the cross-fire effect compared to β-particles, potentially reducing their non-specific toxicity to the BM. In this review, we describe the results of preclinical and clinical studies of RIT of cancer using radioimmunoconjugates emitting α-particles or Auger electrons, and discuss the potential of these high LET forms of radiation to improve the outcome of cancer patients. Copyright © 2015 Elsevier B.V. All rights reserved.

Negative optical absorption and up-energy conversion in dendrites of nanostructured silver grafted with α/β-poly(vinylidene fluoride) in small hierarchical structures

NASA Astrophysics Data System (ADS)

Phule, A. D.; Ram, S.; Shinde, S. K.; Choi, J. H.; Tyagi, A. K.

2018-04-01

We report that a negative optical absorption arises in a sharp band at 325 nm (energy hν2) in a nanostructured silver (n-Ag) doped poly(vinylidene fluoride) (PVF2) in a hybrid nanocomposite of films (∼100 μm thickness). Two polymorphs α- and β-PVF2 are co-stretched through the n-Ag crystallites in dendrites of hierarchical structures. A critical 0.5 wt% n-Ag dosage promotes this band of extinction coefficient to be enhanced by as much as 2.009 × 103, i.e. a 30% value in the Ag-surface plasmon band 350-650 nm (hν1). An electron donor Ag (4d105s1) bonds to an electron accepter moiety CF2 of PVF2, it tunes a dielectric field and sets up an up-energy conversion of the plasmon band. The FESEM and HRTEM images reveal fcc-Ag dendrites entangled with in-built PVF2 surface layers (2-3 nm thickness). The IR phonon bands show how a α → β-PVF2 transformation propagates onto a nascent n-Ag surface and how it is raised-up in small steps of 0.1 wt% and up to 5.0 wt%. In a model scheme, we illustrate how a rigid core-shell of a capsule conducts a new transfer mechanism of the energy to a cold surface plasmon (core) in a coherent collision, so as to balance a net value hν2 = h(ν3 - ν1). It absorbs light in a weak band at 210 nm (hν3) in a π → π* electron transition in the Cdbnd C bonds of the PVF2 (shell), and results in a negative absorption in a coherent excitation of the energy-carriers. A light-emitter on absorption over a wide range of wavelengths (200-650 nm) offers a unique type of energy-converter.

The 3-D numerical simulation research of vacuum injector for linear induction accelerator

NASA Astrophysics Data System (ADS)

Liu, Dagang; Xie, Mengjun; Tang, Xinbing; Liao, Shuqing

2017-01-01

Simulation method for voltage in-feed and electron injection of vacuum injector is given, and verification of the simulated voltage and current is carried out. The numerical simulation for the magnetic field of solenoid is implemented, and a comparative analysis is conducted between the simulation results and experimental results. A semi-implicit difference algorithm is adopted to suppress the numerical noise, and a parallel acceleration algorithm is used for increasing the computation speed. The RMS emittance calculation method of the beam envelope equations is analyzed. In addition, the simulated results of RMS emittance are compared with the experimental data. Finally, influences of the ferromagnetic rings on the radial and axial magnetic fields of solenoid as well as the emittance of beam are studied.

Quantifying Spot Size Reduction of a 1.8 kA Electron Beam for Flash Radiography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burris-Mog, Trevor John; Moir, David C.

The spot size of Axis-I at the Dual Axis Radiographic Hydrodynamic Test facility was reduced by 15.5% by including a small diameter drift tube that acts to aperture the outer diameter of the electron beam. Comparing the measured values to both analytic calculations and results from a particle-in-cell model shows that one-third to one-half of the spot size reduction is due to a drop in beam emittance. We infer that one-half to two-thirds of the spot-size reduction is due to a reduction in beam-target interactions. Sources of emittance growth and the scaling of the final focal spot size with emittancemore » and solenoid aberrations are also presented.« less

Method and source for producing a high concentration of positively charged molecular hydrogen or deuterium ions

DOEpatents

Ehlers, Kenneth W.; Leung, Ka-Ngo

1988-01-01

A high concentration of positive molecular ions of hydrogen or deuterium gas is extracted from a positive ion source having a short path length of extracted ions, relative to the mean free path of the gas molecules, to minimize the production of other ion species by collision between the positive ions and gas molecules. The ion source has arrays of permanent magnets to produce a multi-cusp magnetic field in regions remote from the plasma grid and the electron emitters, for largely confining the plasma to the space therebetween. The ion source has a chamber which is short in length, relative to its transverse dimensions, and the electron emitters are at an even shorter distance from the plasma grid, which contains one or more extraction apertures.

Quantifying Spot Size Reduction of a 1.8 kA Electron Beam for Flash Radiography

DOE PAGES

Burris-Mog, Trevor John; Moir, David C.

2018-03-14

The spot size of Axis-I at the Dual Axis Radiographic Hydrodynamic Test facility was reduced by 15.5% by including a small diameter drift tube that acts to aperture the outer diameter of the electron beam. Comparing the measured values to both analytic calculations and results from a particle-in-cell model shows that one-third to one-half of the spot size reduction is due to a drop in beam emittance. We infer that one-half to two-thirds of the spot-size reduction is due to a reduction in beam-target interactions. Sources of emittance growth and the scaling of the final focal spot size with emittancemore » and solenoid aberrations are also presented.« less

Single Crystal Diamond Needle as Point Electron Source

PubMed Central

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-01-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics. PMID:27731379

Group-III Nitride Field Emitters

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak; Berishev, Igor

2008-01-01

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

NASA Astrophysics Data System (ADS)

Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

1999-01-01

We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

Extension of the general thermal field equation for nanosized emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyritsakis, A., E-mail: akyritsos1@gmail.com; Xanthakis, J. P.

2016-01-28

During the previous decade, Jensen et al. developed a general analytical model that successfully describes electron emission from metals both in the field and thermionic regimes, as well as in the transition region. In that development, the standard image corrected triangular potential barrier was used. This barrier model is valid only for planar surfaces and therefore cannot be used in general for modern nanometric emitters. In a recent publication, the authors showed that the standard Fowler-Nordheim theory can be generalized for highly curved emitters if a quadratic term is included to the potential model. In this paper, we extend thismore » generalization for high temperatures and include both the thermal and intermediate regimes. This is achieved by applying the general method developed by Jensen to the quadratic barrier model of our previous publication. We obtain results that are in good agreement with fully numerical calculations for radii R > 4 nm, while our calculated current density differs by a factor up to 27 from the one predicted by the Jensen's standard General-Thermal-Field (GTF) equation. Our extended GTF equation has application to modern sharp electron sources, beam simulation models, and vacuum breakdown theory.« less

High-Performance Satellite/Terrestrial-Network Gateway

NASA Technical Reports Server (NTRS)

Beering, David R.

2005-01-01

A gateway has been developed to enable digital communication between (1) the high-rate receiving equipment at NASA's White Sands complex and (2) a standard terrestrial digital communication network at data rates up to 622 Mb/s. The design of this gateway can also be adapted for use in commercial Earth/satellite and digital communication networks, and in terrestrial digital communication networks that include wireless subnetworks. Gateway as used here signifies an electronic circuit that serves as an interface between two electronic communication networks so that a computer (or other terminal) on one network can communicate with a terminal on the other network. The connection between this gateway and the high-rate receiving equipment is made via a synchronous serial data interface at the emitter-coupled-logic (ECL) level. The connection between this gateway and a standard asynchronous transfer mode (ATM) terrestrial communication network is made via a standard user network interface with a synchronous optical network (SONET) connector. The gateway contains circuitry that performs the conversion between the ECL and SONET interfaces. The data rate of the SONET interface can be either 155.52 or 622.08 Mb/s. The gateway derives its clock signal from a satellite modem in the high-rate receiving equipment and, hence, is agile in the sense that it adapts to the data rate of the serial interface.

Single-stage plasma-based correlated energy spread compensation for ultrahigh 6D brightness electron beams

DOE PAGES

Manahan, Grace G.; Habib, A. F.; Scherkl, P.; ...

2017-06-05

Plasma photocathode wakefield acceleration combines energy gains of tens of GeV m –1 with generation of ultralow emittance electron bunches, and opens a path towards 5D-brightness orders of magnitude larger than state-of-the-art. This holds great promise for compact accelerator building blocks and advanced light sources. However, an intrinsic by-product of the enormous electric field gradients inherent to plasma accelerators is substantial correlated energy spread—an obstacle for key applications such as free-electron-lasers. Here we show that by releasing an additional tailored escort electron beam at a later phase of the acceleration, when the witness bunch is relativistically stable, the plasma wavemore » can be locally overloaded without compromising the witness bunch normalized emittance. Here, this reverses the effective accelerating gradient, and counter-rotates the accumulated negative longitudinal phase space chirp of the witness bunch. Thereby, the energy spread is reduced by an order of magnitude, thus enabling the production of ultrahigh 6D-brightness beams.« less

Construction and commissioning of the compact energy-recovery linac at KEK

NASA Astrophysics Data System (ADS)

Akemoto, Mitsuo; Arakawa, Dai; Asaoka, Seiji; Cenni, Enrico; Egi, Masato; Enami, Kazuhiro; Endo, Kuninori; Fukuda, Shigeki; Furuya, Takaaki; Haga, Kaiichi; Hajima, Ryoichi; Hara, Kazufumi; Harada, Kentaro; Honda, Tohru; Honda, Yosuke; Honma, Teruya; Hosoyama, Kenji; Kako, Eiji; Katagiri, Hiroaki; Kawata, Hiroshi; Kobayashi, Yukinori; Kojima, Yuuji; Kondou, Yoshinari; Tanaka, Olga; Kume, Tatsuya; Kuriki, Masao; Matsumura, Hiroshi; Matsushita, Hideki; Michizono, Shinichiro; Miura, Takako; Miyajima, Tsukasa; Nagahashi, Shinya; Nagai, Ryoji; Nakai, Hirotaka; Nakajima, Hiromitsu; Nakamura, Norio; Nakanishi, Kota; Nigorikawa, Kazuyuki; Nishimori, Nobuyuki; Nogami, Takashi; Noguchi, Shuichi; Obina, Takashi; Qiu, Feng; Sagehashi, Hidenori; Sakai, Hiroshi; Sakanaka, Shogo; Sasaki, Shinichi; Satoh, Kotaro; Sawamura, Masaru; Shimada, Miho; Shinoe, Kenji; Shishido, Toshio; Tadano, Mikito; Takahashi, Takeshi; Takai, Ryota; Takenaka, Tateru; Tanimoto, Yasunori; Uchiyama, Takashi; Ueda, Akira; Umemori, Kensei; Watanabe, Ken; Yamamoto, Masahiro

2018-01-01

Energy-recovery linacs (ERLs) are promising for advanced synchrotron light sources, high-power free electron lasers (FELs), high-brightness gamma-ray sources, and electron-ion colliders. To demonstrate the critical technology of ERL-based light sources, we have designed and constructed a test accelerator, the compact ERL (cERL). Using advanced technology that includes a photocathode direct current (DC) electron gun and two types of 1.3-GHz-frequency superconducting cavities, the cERL was designed to be capable of recirculating low emittance (≤1 mm ṡ mrad) and high average-current (≥10 mA) electron beams while recovering the beam energy. During initial commissioning, the cERL demonstrated successful recirculation of high-quality beams with normalized transverse emittance of ∼0.14 mm ṡ mrad and momentum spread of ∼1.2 × 10-4 (rms) at a beam energy of 20 MeV and bunch charge below 100 fC. Energy recovery in the superconducting main linac was also demonstrated for high-average-current continuous-wave beams. These results constitute an important milestone toward realizing ERL-based light sources.

Improved High/Low Junction Silicon Solar Cell

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Pao, S. C.; Lindholm, F. A.; Fossum, J. G.

1986-01-01

Method developed to raise value of open-circuit voltage in silicon solar cells by incorporating high/low junction in cell emitter. Power-conversion efficiency of low-resistivity silicon solar cell considerably less than maximum theoretical value mainly because open-circuit voltage is smaller than simple p/n junction theory predicts. With this method, air-mass-zero opencircuit voltage increased from 600 mV level to approximately 650 mV.

Lithography-free large-area metamaterials for stable thermophotovoltaic energy conversion

DOE PAGES

Coppens, Zachary J.; Kravchenko, Ivan I.; Valentine, Jason G.

2016-02-08

A large-area metamaterial thermal emitter is fabricated using facile, lithography-free techniques. The device is composed of conductive oxides, refractory ceramics, and noble metals and shows stable, selective emission after exposure to 1173 K for 22 h in oxidizing and inert atmospheres. Lastly, the results indicate that the metamaterial can be used to achieve high-performance thermophotovoltaic devices for applications such as portable power generation.

Monte Carlo calculation of dose rate conversion factors for external exposure to photon emitters in soil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clovas, A.; Zanthos, S.; Antonopoulos-Domis, M.

2000-03-01

The dose rate conversion factors {dot D}{sub CF} (absorbed dose rate in air per unit activity per unit of soil mass, nGy h{sup {minus}1} per Bq kg{sup {minus}1}) are calculated 1 m above ground for photon emitters of natural radionuclides uniformly distributed in the soil. Three Monte Carlo codes are used: (1) The MCNP code of Los Alamos; (2) The GEANT code of CERN; and (3) a Monte Carlo code developed in the Nuclear Technology Laboratory of the Aristotle University of Thessaloniki. The accuracy of the Monte Carlo results is tested by the comparison of the unscattered flux obtained bymore » the three Monte Carlo codes with an independent straightforward calculation. All codes and particularly the MCNP calculate accurately the absorbed dose rate in air due to the unscattered radiation. For the total radiation (unscattered plus scattered) the {dot D}{sub CF} values calculated from the three codes are in very good agreement between them. The comparison between these results and the results deduced previously by other authors indicates a good agreement (less than 15% of difference) for photon energies above 1,500 keV. Antithetically, the agreement is not as good (difference of 20--30%) for the low energy photons.« less

Software Tools for Emittance Measurement and Matching for 12 GeV CEBAF

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turner, Dennis L.

2016-05-01

This paper discusses model-driven setup of the Continuous Electron Beam Accelerator Facility (CEBAF) for the 12GeV era, focusing on qsUtility. qsUtility is a set of software tools created to perform emittance measurements, analyze those measurements, and compute optics corrections based upon the measurements.qsUtility was developed as a toolset to facilitate reducing machine configuration time and reproducibility by way of an accurate accelerator model, and to provide Operations staff with tools to measure and correct machine optics with little or no assistance from optics experts.

Pepper-pot based emittance measurements of the AWA photoinjector.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Power, J. G.; Conde, M. E.; Gai, W.

2008-01-01

The Argonne Wakefield Accelerator (AWA) RF photocathode gun is a 1.5 cell, L-band, RF photocathode gun operating at 77 MV/m, with emittance compensating solenoids, a magnesium photocathode, and generates an 8 MeV, 1 nC - 100 nC beam. In this paper, we report on a parametric set of measurements to characterize the transverse trace space of the 1 nC electron beam directly out of the gun. We emphasize details of the experimental setup, image analysis, and end with a comparison of the measurements to PARMELA simulations.

Electrical and Optical Performance Characteristics of 0.74-eV p/n InGaAs Monolithic Interconnected Modules

NASA Technical Reports Server (NTRS)

Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Jain, Raj K.; Murray, Christopher S.; Riley, David R.

1997-01-01

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight (8) series interconnected cells. MIM devices, produced from 0.74-eV InGaAs, have demonstrated V(sub oc) = 3.2 volts, J(sub sc) = 70 mA/sq cm, and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (greater than 2 micron) of these devices indicate a reflectivity of greater than 82%. MIM devices produced from 0.55-eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

NASA Technical Reports Server (NTRS)

Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Scheiman, David A.; Murray, Christopher S.; Riley, David R.

2004-01-01

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Cathodoluminescence in the scanning transmission electron microscope.

PubMed

Kociak, M; Zagonel, L F

2017-05-01

Cathodoluminescence (CL) is a powerful tool for the investigation of optical properties of materials. In recent years, its combination with scanning transmission electron microscopy (STEM) has demonstrated great success in unveiling new physics in the field of plasmonics and quantum emitters. Most of these results were not imaginable even twenty years ago, due to conceptual and technical limitations. The purpose of this review is to present the recent advances that broke these limitations, and the new possibilities offered by the modern STEM-CL technique. We first introduce the different STEM-CL operating modes and the technical specificities in STEM-CL instrumentation. Two main classes of optical excitations, namely the coherent one (typically plasmons) and the incoherent one (typically light emission from quantum emitters) are investigated with STEM-CL. For these two main classes, we describe both the physics of light production under electron beam irradiation and the physical basis for interpreting STEM-CL experiments. We then compare STEM-CL with its better known sister techniques: scanning electron microscope CL, photoluminescence, and electron energy-loss spectroscopy. We finish by comprehensively reviewing recent STEM-CL applications. Copyright © 2016 Elsevier B.V. All rights reserved.

Cathodoluminescence in the scanning transmission electron microscope.

PubMed

Kociak, M; Zagonel, L F

2016-12-19

Cathodoluminescence (CL) is a powerful tool for the investigation of optical properties of materials. In recent years, its combination with scanning transmission electron microscopy (STEM) has demonstrated great success in unveiling new physics in the field of plasmonics and quantum emitters. Most of these results were not imaginable even twenty years ago, due to conceptual and technical limitations. The purpose of this review is to present the recent advances that broke these limitations, and the new possibilities offered by the modern STEM-CL technique. We first introduce the different STEM-CL operating modes and the technical specificities in STEM-CL instrumentation. Two main classes of optical excitations, namely the coherent one (typically plasmons) and the incoherent one (typically light emission from quantum emitters) are investigated with STEM-CL. For these two main classes, we describe both the physics of light production under electron beam irradiation and the physical basis for interpreting STEM-CL experiments. We then compare STEM-CL with its better known sister techniques: scanning electron microscope CL, photoluminescence, and electron energy-loss spectroscopy. We finish by comprehensively reviewing recent STEM-CL applications. Copyright © 2016 Elsevier B.V. All rights reserved.

CHARGING OF DEVICES BY MICROWAVE POWER BEAMING

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A. (Inventor)

2005-01-01

A system for providing wireless, charging power and/or primary power to electronic/electrical devices is described whereby microwave energy is employed. Microwave energy is focused by a power transmitter comprising one or more adaptively-phased microwave array emitters onto a device to be charged. Rectennas within the device to be charged receive and rectify the microwave energy and use it for battery charging and/or for primary power. A locator signal generated by the device to be charged is analyzed by the system to determine the location of the device to be charged relative to the microwave array emitters, permitting thc microwave energy to be directly specifically towards the device to be charged. Backscatter detectors respond to backscatter energy reflected off of any obstacle between the device to be charged and the microwave array emitters. Power to any obstructed microwave array emitter is reduced until the obstruction is removed. Optionally, data can be modulated onto microwave energy beams produced by the array emitter and demodulated by the device, thereby providing means of data communication from the power transmitter to the device. Similarly, data can be modulated onto the locator signal and demodulated in the power transmitter, thereby providing means of data communication from the device to the power transmitter.

Tuning the Magnetic Transport of an Induction LINAC using Emittance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Houck, T L; Brown, C G; Ong, M M

2006-08-11

The Lawrence Livermore National Laboratory Flash X-Ray (FXR) machine is a linear induction accelerator used to produce a nominal 18 MeV, 3 kA, 65 ns pulse width electron beam for hydrodynamic radiographs. A common figure of merit for this type of radiographic machine is the x-ray dose divided by the spot area on the bremsstrahlung converter where a higher FOM is desired. Several characteristics of the beam affect the minimum attainable x-ray spot size. The most significant are emittance (chaotic transverse energy), chromatic aberration (energy variation), and beam motion (transverse instabilities and corkscrew motion). FXR is in the midst ofmore » a multi-year optimization project to reduce the spot size. This paper describes the effort to reduce beam emittance by adjusting the fields of the transport solenoids and position of the cathode. If the magnetic transport is not correct, the beam will be mismatched and undergo envelope oscillations increasing the emittance. We measure the divergence and radius of the beam in a drift section after the accelerator by imaging the optical transition radiation (OTR) and beam envelope on a foil. These measurements are used to determine an emittance. Relative changes in the emittance can be quickly estimated from the foil measurements allowing for an efficient, real-time study. Once an optimized transport field is determined, the final focus can be adjusted and the new x-ray spot measured. A description of the diagnostics and analysis is presented.« less

Development program on a cold cathode electron gun

NASA Technical Reports Server (NTRS)

Spindt, C. A.

1979-01-01

A prototype electron gun with a field emitter cathode capable of producing 95 mA in a 1/4 mm diameter beam at 12 kV was produced. Achievement of this goal required supporting studies in cathode fabrication, cathode performance, gun design, cathode mounting and gun fabrication. A series of empirical investigations advanced fabrication technology: More stable emitters were produced and multiple cone failure caused by chain reaction discharges were reduced. The cathode is capable of producing well over 95 mA, but a substantial collector development effort was required to demonstrate emission levels in the 100 mA region. Space charge problems made these levels difficult to achieve. Recommendations are made for future process and materials investigation. Electron gun designs were modeled and tested. A pair of two-electrode gun structures were fabricated and tested; one gun was delivered to NASA. Cathodes were pretested up to 100 mA at SRI and delivered to NASA for test in the gun structure.

Self-mapping the longitudinal field structure of a nonlinear plasma accelerator cavity

DOE PAGES

Clayton, C. E.; Adli, E.; Allen, J.; ...

2016-08-16

The preservation of emittance of the accelerating beam is the next challenge for plasma-based accelerators envisioned for future light sources and colliders. The field structure of a highly nonlinear plasma wake is potentially suitable for this purpose but has not been yet measured. Here we show that the longitudinal variation of the fields in a nonlinear plasma wakefield accelerator cavity produced by a relativistic electron bunch can be mapped using the bunch itself as a probe. We find that, for much of the cavity that is devoid of plasma electrons, the transverse force is constant longitudinally to within ±3% (r.m.s.).more » Moreover, comparison of experimental data and simulations has resulted in mapping of the longitudinal electric field of the unloaded wake up to 83 GV m –1 to a similar degree of accuracy. Lastly, these results bode well for high-gradient, high-efficiency acceleration of electron bunches while preserving their emittance in such a cavity.« less

Self-mapping the longitudinal field structure of a nonlinear plasma accelerator cavity

PubMed Central

Clayton, C. E.; Adli, E.; Allen, J.; An, W.; Clarke, C. I.; Corde, S.; Frederico, J.; Gessner, S.; Green, S. Z.; Hogan, M. J.; Joshi, C.; Litos, M.; Lu, W.; Marsh, K. A.; Mori, W. B.; Vafaei-Najafabadi, N.; Xu, X.; Yakimenko, V.

2016-01-01

The preservation of emittance of the accelerating beam is the next challenge for plasma-based accelerators envisioned for future light sources and colliders. The field structure of a highly nonlinear plasma wake is potentially suitable for this purpose but has not been yet measured. Here we show that the longitudinal variation of the fields in a nonlinear plasma wakefield accelerator cavity produced by a relativistic electron bunch can be mapped using the bunch itself as a probe. We find that, for much of the cavity that is devoid of plasma electrons, the transverse force is constant longitudinally to within ±3% (r.m.s.). Moreover, comparison of experimental data and simulations has resulted in mapping of the longitudinal electric field of the unloaded wake up to 83 GV m−1 to a similar degree of accuracy. These results bode well for high-gradient, high-efficiency acceleration of electron bunches while preserving their emittance in such a cavity. PMID:27527569

Physics issues in diffraction limited storage ring design

NASA Astrophysics Data System (ADS)

Fan, Wei; Bai, ZhengHe; Gao, WeiWei; Feng, GuangYao; Li, WeiMin; Wang, Lin; He, DuoHui

2012-05-01

Diffraction limited electron storage ring is considered a promising candidate for future light sources, whose main characteristics are higher brilliance, better transverse coherence and better stability. The challenge of diffraction limited storage ring design is how to achieve the ultra low beam emittance with acceptable nonlinear performance. Effective linear and nonlinear parameter optimization methods based on Artificial Intelligence were developed for the storage ring physical design. As an example of application, partial physical design of HALS (Hefei Advanced Light Source), which is a diffraction limited VUV and soft X-ray light source, was introduced. Severe emittance growth due to the Intra Beam Scattering effect, which is the main obstacle to achieve ultra low emittance, was estimated quantitatively and possible cures were discussed. It is inspiring that better performance of diffraction limited storage ring can be achieved in principle with careful parameter optimization.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prost, Lionel; Carneiro, Jean-Paul; Shemyakin, Alexander

In a Low Energy Beam Transport line (LEBT), the emittance growth due to the beam's own space charge is typically suppressed by way of neutralization from either electrons or ions, which originate from ionization of the background gas. In cases where the beam is chopped, the neutralization pattern changes throughout the beginning of the pulse, causing the Twiss parameters to differ significantly from their steady state values, which, in turn, may result in beam losses downstream. For a modest beam perveance, there is an alternative solution, in which the beam is kept un-neutralized in the portion of the LEBT thatmore » contains the chopper. The emittance can be nearly preserved if the transition to the un-neutralized section occurs where the beam exhibits low transverse tails. This report discusses the experimental realization of such a scheme at Fermilab's PXIE, where low beam emittance dilution was demonstrated« less

Generic conditions for suppressing the coherent synchrotron radiation induced emittance growth in a two-dipole achromat

NASA Astrophysics Data System (ADS)

Jiao, Yi; Cui, Xiaohao; Huang, Xiyang; Xu, Gang

2014-06-01

The effect of the coherent synchrotron radiation (CSR) becomes evident, and leads to increased beam energy spread and transverse emittance dilution, as both the emittance and bunch length of the electron beams are continuously pushed down in present and forthcoming high-brightness light sources and linear colliders. Suppressing this effect is important to preserve the expected machine performance. Methods of the R-matrix analysis and the Courant-Snyder formalism analysis have been proposed to evaluate and to suppress the emittance growth due to CSR in achromatic cells. In this paper a few important modifications are made on these two methods, which enable us to prove that these two methods are equivalent to each other. With the modified analysis, we obtain explicit and generic conditions of cancelling the CSR-driven emittance excitation in a single achromat consisting of two dipoles of arbitrary bending angles. In spite of the fact that the analysis constrains itself in a linear regime, based on the assumption that CSR-induced particle energy deviation is proportional to both θ and ρ1/3, with θ being the bending angle and ρ the bending radius, it is demonstrated through ELEGANT simulations that the conditions derived from this analysis are still effective in suppressing the emittance growth when a more detailed one-dimensional CSR model is considered. In addition, it illustrates that the emittance growth can be reduced to a lower level with the proposed conditions than with the other two approaches, such as matching the beam envelope to the CSR kick and setting the cell-to-cell betatron phase advance to an appropriate value.

Flat electron beam sources for DLA accelerators

DOE PAGES

Ody, A.; Musumeci, P.; Maxson, J.; ...

2016-10-26

In this study we discuss the application of the flat beam transform to generate beams suitable for injection into slab-symmetric dielectric laser-driven accelerators (DLAs). A study of the focusing requirements to keep the particles within the tight apertures characterizing these accelerators shows the benefits of employing ultralow beam emittances. The slab geometry of the many dielectric accelerating structures strongly favors the use of flat beams with large ratio between vertical and horizontal emittances. We employ particle tracking simulations to study the application of the flat beam transform for two injector designs, a DC non relativistic photogun and a 1.6 cellmore » S-band RF photoinjector, obtaining in both cases emittance ratios between the horizontal and vertical plane in excess of 100 in agreement with simple analytical estimates. The 4 MeV RF photoinjector study-case can be directly applied to the UCLA Pegasus beamline and shows normalized emittances down to < 3 nm in the vertical dimension for beam charges up to 20 fC, enabling a two-stage DLA experiment.« less

Efficient modulation of optical and electrical properties of X-shaped thermally activated delayed fluorescence emitters by substitution.

PubMed

Fan, Jianzhong; Wang, Xin; Lin, Lili; Wang, Chuankui

2016-08-01

A series of X-shaped thermally activated delayed fluorescence (TADF) emitters are systematically studied by first-principles calculations. Effects of the cyano group adding to the acceptor unit and the hydroxyl group adding to the donor part on the optical and electrical properties are analyzed. It is found that both kinds of groups can efficiently increase the emission wavelength to realize full-color emission. Although they play different roles in modulating the energy level of frontier orbitals, the S-T energy gap, the reorganization energy and transfer integral for different molecules, they can efficiently increase the charge transfer rate and reduce the difference of electron transfer rate and hole transfer rate. These results indicate that these designed strategies are efficient to achieve balanced charge transfer rates and modulate emission colors. By analyzing the energy matching between the TADF emitters and three kinds of hosts, the emission spectra of the 3,5-bis(N-carbazolyl)benzene (mcp) and the absorption spectra of most TADF emitters have a large overlap, which provides helpful information in application of these TADF molecules.

Fowler Nordheim theory of carbon nanotube based field emitters

NASA Astrophysics Data System (ADS)

Parveen, Shama; Kumar, Avshish; Husain, Samina; Husain, Mushahid

2017-01-01

Field emission (FE) phenomena are generally explained in the frame-work of Fowler Nordheim (FN) theory which was given for flat metal surfaces. In this work, an effort has been made to present the field emission mechanism in carbon nanotubes (CNTs) which have tip type geometry at nanoscale. High aspect ratio of CNTs leads to large field enhancement factor and lower operating voltages because the electric field strength in the vicinity of the nanotubes tip can be enhanced by thousand times. The work function of nanostructure by using FN plot has been calculated with reverse engineering. With the help of modified FN equation, an important formula for effective emitting area (active area for emission of electrons) has been derived and employed to calculate the active emitting area for CNT field emitters. Therefore, it is of great interest to present a state of art study on the complete solution of FN equation for CNTs based field emitter displays. This manuscript will also provide a better understanding of calculation of different FE parameters of CNTs field emitters using FN equation.

Understanding the Impact of Field-Emitter Characteristics on Electron Beam Focusing in the VAPoR Time-of-Fight Mass Spectrometer

NASA Technical Reports Server (NTRS)

Southard, Adrian E.; Getty, Stephanie A.; Costen, Nicholas P.; Hidrobo, Gregory B.; Glavin, Daniel P.

2013-01-01

Simulations of field emission of electrons from an electron gun are used to determine the angular distribution of the emitted electron beam and the percentage of charge transmitted through the grid. The simulations are a first step towards understanding the spherical aberration present after focusing the electron beam. The effect of offset of the cathode with respect to the grid and the separation between cathode and grid on the angular distributions of emitted electrons and transmission of the grid are explored.

Laser wakefield accelerated electron beam monitoring and control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koga, J. K.; Mori, M.; Kotaki, H.

2016-03-25

We will discuss our participation in the ImPACT project, which has as one of its goals the development of an ultra-compact electron accelerator using lasers (< 1 GeV, < 10   m) and the generation of an x-ray beam from the accelerated electrons. Within this context we will discuss our investigation into electron beam monitoring and control. Since laser accelerated electrons will be used for x-ray beam generation combined with an undulator, we will present investigation into the possibilities of the improvement of electron beam emittance through cooling.

Observation of electron cloud instabilities and emittance dilution at the Cornell electron-positron Storage ring Test Accelerator

DOE PAGES

Holtzapple, R. L.; Billing, M. G.; Campbell, R. C.; ...

2016-04-11

Electron cloud related emittance dilution and instabilities of bunch trains limit the performance of high intensity circular colliders. One of the key goals of the Cornell electron-positron storage ring Test Accelerator (CesrTA) research program is to improve our understanding of how the electron cloud alters the dynamics of bunches within the train. Single bunch beam diagnostics have been developed to measure the beam spectra, vertical beam size, two important dynamical effects of beams interacting with the electron cloud, for bunch trains on a turn-by-turn basis. Experiments have been performed at CesrTA to probe the interaction of the electron cloud withmore » stored positron bunch trains. The purpose of these experiments was to characterize the dependence of beam-electron cloud interactions on the machine parameters such as bunch spacing, vertical chromaticity, and bunch current. The beam dynamics of the stored beam, in the presence of the electron cloud, was quantified using: 1) a gated beam position monitor (BPM) and spectrum analyzer to measure the bunch-by-bunch frequency spectrum of the bunch trains, 2) an x-ray beam size monitor to record the bunch-by-bunch, turn-by-turn vertical size of each bunch within the trains. In this study we report on the observations from these experiments and analyze the effects of the electron cloud on the stability of bunches in a train under many different operational conditions.« less

Observation of Electron Cloud Instabilities and Emittance Dilution at the Cornell Electron-Positron Storage Ring Test Accelerator

NASA Astrophysics Data System (ADS)

Holtzapple, R. L.; Billing, M. G.; Campbell, R. C.; Dugan, G. F.; Flanagan, J.; McArdle, K. E.; Miller, M. I.; Palmer, M. A.; Ramirez, G. A.; Sonnad, K. G.; Totten, M. M.; Tucker, S. L.; Williams, H. A.

2016-04-01

Electron cloud related emittance dilution and instabilities of bunch trains limit the performance of high intensity circular colliders. One of the key goals of the Cornell electron-positron storage ring Test Accelerator (CesrTA) research program is to improve our understanding of how the electron cloud alters the dynamics of bunches within the train. Single bunch beam diagnotics have been developed to measure the beam spectra, vertical beam size, two important dynamical effects of beams interacting with the electron cloud, for bunch trains on a turn-by-turn basis. Experiments have been performed at CesrTA to probe the interaction of the electron cloud with stored positron bunch trains. The purpose of these experiments was to characterize the dependence of beam-electron cloud interactions on the machine parameters such as bunch spacing, vertical chromaticity, and bunch current. The beam dynamics of the stored beam, in the presence of the electron cloud, was quantified using: 1) a gated beam position monitor (BPM) and spectrum analyzer to measure the bunch-by-bunch frequency spectrum of the bunch trains; 2) an x-ray beam size monitor to record the bunch-by-bunch, turn-by-turn vertical size of each bunch within the trains. In this paper we report on the observations from these experiments and analyze the effects of the electron cloud on the stability of bunches in a train under many different operational conditions.

Theoretical investigation of the microwave electron gun

NASA Astrophysics Data System (ADS)

Gao, J.

1990-12-01

In this article the microwave electron gun (rf gun) is investigated theoretically in a general way. After a brief review of the sources of emittance growth in a cavity, the optimization criteria are given and optimized electric field distributions on the axes of the cavities are found, from which cavities for a rf gun can be designed.

SAPHIRE (scintillator avalanche photoconductor with high resolution emitter readout) for low dose x-ray imaging: Spatial resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Dan; Zhao Wei

2008-07-15

An indirect flat panel imager (FPI) with programmable avalanche gain and field emitter array (FEA) readout is being investigated for low-dose and high resolution x-ray imaging. It is made by optically coupling a structured x-ray scintillator, e.g., thallium (Tl) doped cesium iodide (CsI), to an amorphous selenium (a-Se) avalanche photoconductor called high-gain avalanche rushing amorphous photoconductor (HARP). The charge image created by the scintillator/HARP (SHARP) combination is read out by the electron beams emitted from the FEA. The proposed detector is called scintillator avalanche photoconductor with high resolution emitter readout (SAPHIRE). The programmable avalanche gain of HARP can improve themore » low dose performance of indirect FPI while the FEA can be made with pixel sizes down to 50 {mu}m. Because of the avalanche gain, a high resolution type of CsI (Tl), which has not been widely used in indirect FPI due to its lower light output, can be used to improve the high spatial frequency performance. The purpose of the present article is to investigate the factors affecting the spatial resolution of SAPHIRE. Since the resolution performance of the SHARP combination has been well studied, the focus of the present work is on the inherent resolution of the FEA readout method. The lateral spread of the electron beam emitted from a 50 {mu}mx50 {mu}m pixel FEA was investigated with two different electron-optical designs: mesh-electrode-only and electrostatic focusing. Our results showed that electrostatic focusing can limit the lateral spread of electron beams to within the pixel size of down to 50 {mu}m. Since electrostatic focusing is essentially independent of signal intensity, it will provide excellent spatial uniformity.« less

Experimental demonstration of a single-spike hard-X-ray free-electron laser starting from noise

DOE PAGES

Marinelli, A.; MacArthur, J.; Emma, P.; ...

2017-10-09

In this letter, we report the experimental demonstration of single-spike hard-X-ray free-electron laser pulses starting from noise with multi-eV bandwidth. Here, this is accomplished by shaping a low-charge electron beam with a slotted emittance spoiler and by adjusting the transport optics to optimize the beam-shaping accuracy. Based on elementary free-electron laser scaling laws, we estimate the pulse duration to be less than 1 fs full-width at half-maximum.

Thermionic Power Cell To Harness Heat Energies for Geothermal Applications

NASA Technical Reports Server (NTRS)

Manohara, Harish; Mojarradi, Mohammad; Greer, Harold F.

2011-01-01

A unit thermionic power cell (TPC) concept has been developed that converts natural heat found in high-temperature environments (460 to 700 C) into electrical power for in situ instruments and electronics. Thermionic emission of electrons occurs when an emitter filament is heated to gwhite hot h temperatures (>1,000 C) allowing electrons to overcome the potential barrier and emit into the vacuum. These electrons are then collected by an anode, and transported to the external circuit for energy storage.

Beam dynamics performances and applications of a low-energy electron-beam magnetic bunch compressor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokop, C. R.; Piot, P.; Carlsten, B. E.

2013-08-01

Many front-end applications of electron linear accelerators rely on the production of temporally compressed bunches. The shortening of electron bunches is often realized with magnetic bunch compressors located in high-energy sections of accelerators. Magnetic compression is subject to collective effects including space charge and self interaction via coherent synchrotron radiation. In this paper we explore the application of magnetic compression to low-energy (~40MeV), high-charge (nC) electron bunches with low normalized transverse emittances (<5@mm).

Experimental demonstration of a single-spike hard-X-ray free-electron laser starting from noise

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marinelli, A.; MacArthur, J.; Emma, P.

In this letter, we report the experimental demonstration of single-spike hard-X-ray free-electron laser pulses starting from noise with multi-eV bandwidth. Here, this is accomplished by shaping a low-charge electron beam with a slotted emittance spoiler and by adjusting the transport optics to optimize the beam-shaping accuracy. Based on elementary free-electron laser scaling laws, we estimate the pulse duration to be less than 1 fs full-width at half-maximum.

High flux, narrow bandwidth compton light sources via extended laser-electron interactions

DOEpatents

Barty, V P

2015-01-13

New configurations of lasers and electron beams efficiently and robustly produce high flux beams of bright, tunable, polarized quasi-monoenergetic x-rays and gamma-rays via laser-Compton scattering. Specifically, the use of long-duration, pulsed lasers and closely-spaced, low-charge and low emittance bunches of electron beams increase the spectral flux of the Compton-scattered x-rays and gamma rays, increase efficiency of the laser-electron interaction and significantly reduce the overall complexity of Compton based light sources.

InAs/GaSb Broken-Gap Heterostructure Laser for Terahertz Spectroscopic Sensing Application

DTIC Science & Technology

2010-09-01

from interband tunneling from the emitter is insignificant when forward biasing is applied. This means that HHs will accumulate in the right VB well... dependent on in-plane momentum. An important observation from Figs. 3 and 4 is that the interband tunneling probability is significantly less than the CB...leverages resonant electron injection and interband tunneling electron depletion to realize electron population inversion, while at the same time mitigating

A novel semiconductor-based, fully incoherent amplified spontaneous emission light source for ghost imaging

PubMed Central

Hartmann, Sébastien; Elsäßer, Wolfgang

2017-01-01

Initially, ghost imaging (GI) was demonstrated with entangled light from parametric down conversion. Later, classical light sources were introduced with the development of thermal light GI concepts. State-of-the-art classical GI light sources rely either on complex combinations of coherent light with spatially randomizing optical elements or on incoherent lamps with monochromating optics, however suffering strong losses of efficiency and directionality. Here, a broad-area superluminescent diode is proposed as a new light source for classical ghost imaging. The coherence behavior of this spectrally broadband emitting opto-electronic light source is investigated in detail. An interferometric two-photon detection technique is exploited in order to resolve the ultra-short correlation timescales. We thereby quantify the coherence time, the photon statistics as well as the number of spatial modes unveiling a complete incoherent light behavior. With a one-dimensional proof-of-principle GI experiment, we introduce these compact emitters to the field which could be beneficial for high-speed GI systems as well as for long range GI sensing in future applications. PMID:28150737

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

NASA Astrophysics Data System (ADS)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Towards a 4{sup th} generation storage ring at the Canadian Light Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dallin, Les; Wurtz, Ward

2016-07-27

Demands from beamline scientists for more brilliant sources of synchrotron radiation have resulted in the emergence of 4{sup th} generation (diffraction-limited) storage rings. The practical development of the multi-bend achromat (MBA) concept by MAX IV lab has spurred many synchrotron light sources around the world to develop similar machines. For existing facilities two options are available: upgrading existing machines or building a new structure. The Canadian Light Source (CLS) has explored both options. For a new low emittance source in the existing CLS tunnel a decrease in electron energy would be required. A machine similar to the ALS upgrade couldmore » be contemplated. To achieve low emittance at our present energy of 2.9 GeV a new storage ring is desirable. Several options have been investigated. These designs use extremely strong focusing magnets to achieve extremely low emittances in compact lattice achromats.« less

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Efficient fabrication of carbon nanotube micro tip arrays by tailoring cross-stacked carbon nanotube sheets.

PubMed

Wei, Yang; Liu, Peng; Zhu, Feng; Jiang, Kaili; Li, Qunqing; Fan, Shoushan

2012-04-11

Carbon nanotube (CNT) micro tip arrays with hairpin structures on patterned silicon wafers were efficiently fabricated by tailoring the cross-stacked CNT sheet with laser. A blade-like structure was formed at the laser-cut edges of the CNT sheet. CNT field emitters, pulled out from the end of the hairpin by an adhesive tape, can provide 150 μA intrinsic emission currents with low beam noise. The nice field emission is ascribed to the Joule-heating-induced desorption of the emitter surface by the hairpin structure, the high temperature annealing effect, and the surface morphology. The CNT emitters with hairpin structures will greatly promote the applications of CNTs in vacuum electronic devices and hold the promises to be used as the hot tips for thermochemical nanolithography. More CNT-based structures and devices can be fabricated on a large scale by this versatile method. © 2012 American Chemical Society

Oxidation and emittance of superalloys in heat shield applications

NASA Technical Reports Server (NTRS)

Wiedemann, K. E.; Clark, R. K.; Unnam, J.

1986-01-01

Recently developed superalloys that form alumina coatings have a high potential for heat shield applications for advanced aerospace vehicles at temperatures above 1095C. Both INCOLOY alloy MA 956 (of the Inco Alloys International, Inc.), an iron-base oxide-dispersion-strengthened alloy, and CABOT alloy No. 214 (of the Cabot Corporation), an alumina-forming nickel-chromium alloy, have good oxidation resistance and good elevated temperature strength. The oxidation resistance of both alloys has been attributed to the formation of a thin alumina layer (alpha-Al2O3) at the surface. Emittance and oxidation data were obtained for simulated Space Shuttle reentry conditions using a hypersonic arc-heated wind tunnel. The surface oxides and substrate alloys were characterized using X-ray diffraction and scanning and transmission electron microscopy with an energy-dispersive X-ray analysis unit. The mass loss and emittance characteristics of the two alloys are discussed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolski, A.; Penn, G.; Sessler, A.

The consequences of beam conditioning in four example cases [VISA, a soft x-ray free-electron laser (FEL), LCLS, and a 'Greenfield' FEL] are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance and, furthermore, allows for stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced by a factor of 2 or more. The beam dynamics in a general conditioning system are studied, with 'matching conditions' derived for achieving conditioning without growth in the effective emittance. Various conditioning lattices are considered, and expressions derived for the amount of conditioningmore » provided in each case when the matching conditions are satisfied. These results show that there is no fundamental obstacle to producing beam conditioning, and that the problem can be reduced to one of proper lattice design. Nevertheless, beam conditioning will not be easy to implement in practice.« less

An ultrafast electron microscope gun driven by two-photon photoemission from a nanotip cathode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bormann, Reiner; Strauch, Stefanie; Schäfer, Sascha, E-mail: schaefer@ph4.physik.uni-goettingen.de

We experimentally and numerically investigate the performance of an advanced ultrafast electron source, based on two-photon photoemission from a tungsten needle cathode incorporated in an electron microscope gun geometry. Emission properties are characterized as a function of the electrostatic gun settings, and operating conditions leading to laser-triggered electron beams of very low emittance (below 20 nm mrad) are identified. The results highlight the excellent suitability of optically driven nano-cathodes for the further development of ultrafast transmission electron microscopy.

Feasibility of a ring FEL at low emittance storage rings

NASA Astrophysics Data System (ADS)

Agapov, I.

2015-09-01

A scheme for generating coherent radiation at latest generation low emittance storage rings such as PETRA III at DESY (Balewski et al., 2004 [1]) is proposed. The scheme is based on focusing and subsequent defocusing of the electron beam in the longitudinal phase space at the undulator location. The expected performance characteristics are estimated for radiation in the wavelength range of 500-1500 eV. It is shown that the average brightness is increased by several orders of magnitude compared to spontaneous undulator radiation, which can open new perspectives for photon-hungry soft X-ray spectroscopy techniques.

Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

NASA Astrophysics Data System (ADS)

Suda, Ryutaro; Yagi, Mamiko; Kojima, Akira; Mentek, Romain; Mori, Nobuya; Shirakashi, Jun-ichi; Koshida, Nobuyoshi

2015-04-01

To enhance the usefulness of ballistic hot electron injection into solutions for depositing thin group-IV films, a dripping scheme is proposed. A very small amount of SiCl4 or GeCl4 solution was dripped onto the surface of a nanocrystalline Si (nc-Si) electron emitter, and then the emitter is driven without using any counter electrodes. It is shown that thin Si and Ge films are deposited onto the emitting surface. Spectroscopic surface and compositional analyses showed no extrinsic carbon contaminations in deposited thin films, in contrast to the results of a previous study using the dipping scheme. The availability of this technique for depositing thin SiGe films is also demonstrated using a mixture SiCl4+GeCl4 solution. Ballistic hot electrons injected into solutions with appropriate kinetic energies promote preferential reduction of target ions with no by-products leading to nuclei formation for the thin film growth. Specific advantageous features of this clean, room-temperature, and power-effective process is discussed in comparison with the conventional dry and wet processes.

Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

NASA Astrophysics Data System (ADS)

Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

2018-02-01

Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

Control of the external photoluminescent quantum yield of emitters coupled to nanoantenna phased arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Ke; Verschuuren, Marc A.; Lozano, Gabriel

2015-08-21

Optical losses in metals represent the largest limitation to the external quantum yield of emitters coupled to plasmonic antennas. These losses can be at the emission wavelength, but they can be more important at shorter wavelengths, i.e., at the excitation wavelength of the emitters, where the conductivity of metals is usually lower. We present accurate measurements of the absolute external photoluminescent quantum yield of a thin layer of emitting material deposited over a periodic nanoantenna phased array. Emission and absorptance measurements of the sample are performed using a custom-made setup including an integrating sphere and variable angle excitation. The measurementsmore » reveal a strong dependence of the external quantum yield on the angle at which the optical field excites the sample. Such behavior is attributed to the coupling between far-field illumination and near-field excitation mediated by the collective resonances supported by the array. Numerical simulations confirm that the inherent losses associated with the metal can be greatly reduced by selecting an optimum angle of illumination, which boosts the light conversion efficiency in the emitting layer. This combined experimental and numerical characterization of the emission from plasmonic arrays reveals the need to carefully design the illumination to achieve the maximum external quantum yield.« less

Analysis of a photon assisted field emission device

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Lau, Y. Y.; McGregor, D. S.

2000-07-01

A field emitter array held at the threshold of emission by a dc gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor may produce electron bunches ("density modulation") at gigahertz frequencies. We develop an analytical model of such optically controlled emission from a silicon tip using a modified Wentzel-Kramers-Brillouin and Airy function approach to solving Schrödinger's equation. Band bending and an approximation to the exchange-correlation effects on the image charge potential are included for an array of hyperbolic emitters with a distribution in tip radii and work function. For a simple relationship between the incident photon flux and the resultant electron density at the emission site, an estimation of the tunneling current is made. An example of the operation and design of such a photon-assisted field emission device is given.

HIGH-ENERGY X-RAY PINHOLE CAMERA FOR HIGH-RESOLUTION ELECTRON BEAM SIZE MEASUREMENTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, B.; Morgan, J.; Lee, S.H.

The Advanced Photon Source (APS) is developing a multi-bend achromat (MBA) lattice based storage ring as the next major upgrade, featuring a 20-fold reduction in emittance. Combining the reduction of beta functions, the electron beam sizes at bend magnet sources may be reduced to reach 5 – 10 µm for 10% vertical coupling. The x-ray pinhole camera currently used for beam size monitoring will not be adequate for the new task. By increasing the operating photon energy to 120 – 200 keV, the pinhole camera’s resolution is expected to reach below 4 µm. The peak height of the pinhole imagemore » will be used to monitor relative changes of the beam sizes and enable the feedback control of the emittance. We present the simulation and the design of a beam size monitor for the APS storage ring.« less

Field emitter arrays and displays produced by ion tracking lithography

NASA Astrophysics Data System (ADS)

Felter, T. E.; Musket, R. G.; Bernhardt, A. F.

2005-12-01

When ions of sufficient electronic energy loss traverse a dielectric film or foil, they alter the chemical bonding along their nominally straight path within the material. A suitable etchant can quickly dissolve these so-called latent tracks leaving holes of small diameter (∼10 nm) but long length - several microns. Continuing the etching process gradually increases the diameter reproducibly and uniformly. The trackable medium can be applied as a uniform film onto large substrates. The small, monodisperse holes produced by this track etching can be used in conjunction with additional thin film processing to create functional structures attached to the substrate. For example, Lawrence Livermore National Laboratory and Candescent Technologies Corporation (CTC) co-developed a process to make arrays of gated field emitters (∼100 nm diameter electron guns) for CTC's Thin CRTTM displays, which have been fabricated to diagonal dimensions >13 in. Additional technological applications of ion tracking lithography will be briefly covered.

Investigations on the structure of the extracted ion beam from an electron cyclotron resonance ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spaedtke, P.; Lang, R.; Maeder, J.

2012-02-15

Using improved beam diagnostic tools, the structure of an ion beam extracted from an electron cyclotron resonance ion source (ECRIS) becomes visible. Especially viewing targets to display the beam profile and pepper pot devices for emittance measurements turned out to be very useful. On the contrary, diagnostic tools integrating over one space coordinate like wire harps for profile measurements or slit-slit devices, respectively slit-grid devices to measure the emittance might be applicable for beam transport investigations in a quadrupole channel, but are not very meaningful for investigations regarding the given ECRIS symmetry. Here we try to reproduce the experimentally foundmore » structure on the ion beam by simulation. For the simulation, a certain model has to be used to reproduce the experimental results. The model is also described in this paper.« less