Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species

DOEpatents

Teeter, Glenn; Du, Hui; Young, Matthew

2013-08-06

A method for synthesizing a thin film of copper, zinc, tin, and a chalcogen species ("CZTCh" or "CZTSS") with well-controlled properties. The method includes depositing a thin film of precursor materials, e.g., approximately stoichiometric amounts of copper (Cu), zinc (Zn), tin (Sn), and a chalcogen species (Ch). The method then involves re-crystallizing and grain growth at higher temperatures, e.g., between about 725 and 925 degrees K, and annealing the precursor film at relatively lower temperatures, e.g., between 600 and 650 degrees K. The processing of the precursor film takes place in the presence of a quasi-equilibrium vapor, e.g., Sn and chalcogen species. The quasi-equilibrium vapor is used to maintain the precursor film in a quasi-equilibrium condition to reduce and even prevent decomposition of the CZTCh and is provided at a rate to balance desorption fluxes of Sn and chalcogens.

Sensing of volatile organic compounds by copper phthalocyanine thin films

NASA Astrophysics Data System (ADS)

Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

2017-02-01

Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

Ultrasonic Spray Pyrolysis Deposited Copper Sulphide Thin Films for Solar Cell Applications

PubMed Central

Firat, Y. E.; Yildirim, H.; Erturk, K.

2017-01-01

Polycrystalline copper sulphide (CuxS) thin films were grown by ultrasonic spray pyrolysis method using aqueous solutions of copper chloride and thiourea without any complexing agent at various substrate temperatures of 240, 280, and 320°C. The films were characterized for their structural, optical, and electrical properties by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis of X-rays (EDAX), atomic force microscopy (AFM), contact angle (CA), optical absorption, and current-voltage (I-V) measurements. The XRD analysis showed that the films had single or mixed phase polycrystalline nature with a hexagonal covellite and cubic digenite structure. The crystalline phase of the films changed depending on the substrate temperature. The optical band gaps (Eg) of thin films were 2.07 eV (CuS), 2.50 eV (Cu1.765S), and 2.28 eV (Cu1.765S–Cu2S). AFM results indicated that the films had spherical nanosized particles well adhered to the substrate. Contact angle measurements showed that the thin films had hydrophobic nature. Hall effect measurements of all the deposited CuxS thin films demonstrated them to be of p-type conductivity, and the current-voltage (I-V) dark curves exhibited linear variation. PMID:29109807

Process Of Bonding Copper And Tungsten

DOEpatents

Slattery, Kevin T.; Driemeyer, Daniel E.; Davis, John W.

2000-07-18

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by sintering a stack of individual copper and tungsten powder blend layers having progressively higher copper content/tungsten content, by volume, ratio values in successive powder blend layers in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Influence of post-deposition annealing on structural, morphological and optical properties of copper (II) acetylacetonate thin films.

PubMed

Abdel-Khalek, H; El-Samahi, M I; El-Mahalawy, Ahmed M

2018-05-21

In this study, the effect of thermal annealing under vacuum conditions on structural, morphological and optical properties of thermally evaporated copper (II) acetylacetonate, cu(acac) 2 , thin films were investigated. The copper (II) acetylacetonate thin films were deposited using thermal evaporation technique at vacuum pressure ~1 × 10 -5  mbar. The deposited films were thermally annealed at 323, 373, 423, and 473 K for 2 h in vacuum. The thermogravimetric analysis of cu(acac) 2 powder indicated a thermal stability of cu(acac) 2 up to 423 K. The effects of thermal annealing on the structural properties of cu(acac) 2 were evaluated employing X-ray diffraction method and the analysis showed a polycrystalline nature of the as-deposited and annealed films with a preferred orientation in [1¯01] direction. Fourier transformation infrared (FTIR) technique was used to negate the decomposition of copper (II) acetylacetonate during preparation or/and annealing up to 423 K. The surface morphology of the prepared films was characterized by means of field emission scanning electron microscopy (FESEM). A significant enhancement of the morphological properties of cu(acac) 2 thin films was obtained till the annealing temperature reaches 423 K. The variation of optical constants that estimated from spectrophotometric measurements of the prepared thin films was investigated as a function of annealing temperature. The annealing process presented significantly impacted the nonlinear optical properties such as third-order optical susceptibility χ (3) and nonlinear refractive index n 2 of cu(acac) 2 thin films. Copyright © 2018 Elsevier B.V. All rights reserved.

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

DOEpatents

Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

1999-02-16

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

Investigation of Annealing Temperature on Copper Oxide Thin Films Using Sol-Gel Spin Coating Technique

NASA Astrophysics Data System (ADS)

Hashim, H.; Samat, S. F. A.; Shariffudin, S. S.; Saad, P. S. M.

2018-03-01

Copper (II) Oxide or cupric oxide (CuO) is one of the well-known materials studied for thin films applications. This paper was studied on the effect of annealing temperature to CuO thin films using sol-gel method and spin coating technique. The solution was prepared by sol-gel method and the thin films were synthesized at various temperatures from 500°C to 700°C that deposited onto the quartz substrates. After the annealing process, the thin films were uniform and brownish black in colour. The measurements were performed by atomic force microscopy (AFM), surface profiler (SP), two-point probe and Ultraviolet-visible (UV-Vis-NIR) spectrometer. From the optical measurement, the band gap was estimated to be 1.44eV for sample annealed at 550°C.

Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genfa Wu; Anne-Marie Valente; H. Phillips

2004-05-01

An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV.more » The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.« less

Auger electron and X-ray photoelectron spectroscopic study of the biocorrosion of copper by alginic acid polysaccharide

NASA Astrophysics Data System (ADS)

Jolley, John G.; Geesey, Gill G.; Hankins, Michael R.; Wright, Randy B.; Wichlacz, Paul L.

1989-08-01

Thin films (3.4 nm) of copper on germanium substrates were exposed to 2% alginic acid polysaccharide aqueous solution. Pre- and post-exposure characterization were done by Auger electron spectroscopy and X-ray photoelectron spectroscopy. Ancillary graphite furnace atomic absorption spectroscopy was used to monitor the removal process of the copper thin film from the germanium substrate. Results indicate that some of the copper was oxidized by the alginic acid solution. Some of the copper was removed from the Cu/Ge interface and incorporated into the polymer matrix. Thus, biocorrosion of copper was exhibited by the alginic acid polysaccharide.

Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere.

PubMed

Gómez-Pozos, Heberto; Arredondo, Emma Julia Luna; Maldonado Álvarez, Arturo; Biswal, Rajesh; Kudriavtsev, Yuriy; Pérez, Jaime Vega; Casallas-Moreno, Yenny Lucero; Olvera Amador, María de la Luz

2016-01-29

A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM) and secondary ion mass spectroscopy (SIMS), respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C₃H₈, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 10⁴, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C₃H₈ gas.

Investigation on Structural and Optical Properties of Copper Telluride Thin Films with Different Annealing Temperature

NASA Astrophysics Data System (ADS)

Nishanthini, R.; Muthu Menaka, M.; Pandi, P.; Bahavan Palani, P.; Neyvasagam, K.

The copper telluride (Cu2Te) thin film of thickness 240nm was coated on a microscopic glass substrate by thermal evaporation technique. The prepared films were annealed at 150∘C and 250∘C for 1h. The annealing effect on Cu2Te thin films was examined with different characterization methods like X-ray Diffraction Spectroscopy (XRD), Scanning Electron Microscopy (SEM), Ultra Violet-Visible Spectroscopy (UV-VIS) and Photoluminescence (PL) Spectroscopy. The peak intensities of XRD spectra were increased while increasing annealing temperature from 150∘C to 250∘C. The improved crystallinity of the thin films was revealed. However, the prepared films are exposed complex structure with better compatibility. Moreover, the shift in band gap energy towards higher energies (blue shift) with increasing annealing temperature is observed from the optical studies.

Method of making an improved superconducting quantum interference device

DOEpatents

Wu, Cheng-Teh; Falco, Charles M.; Kampwirth, Robert T.

1977-01-01

An improved superconducting quantum interference device is made by sputtering a thin film of an alloy of three parts niobium to one part tin in a pattern comprising a closed loop with a narrow region, depositing a thin film of a radiation shield such as copper over the niobium-tin, scribing a narrow line in the copper over the narrow region, exposing the structure at the scribed line to radiation and removing the deposited copper.

Effect of native oxide layers on copper thin-film tensile properties: A reactive molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skarlinski, Michael D., E-mail: michael.skarlinski@rochester.edu; Quesnel, David J.; Department of Mechanical Engineering, University of Rochester, Rochester, New York 14627

2015-12-21

Metal-oxide layers are likely to be present on metallic nano-structures due to either environmental exposure during use, or high temperature processing techniques such as annealing. It is well known that nano-structured metals have vastly different mechanical properties from bulk metals; however, difficulties in modeling the transition between metallic and ionic bonding have prevented the computational investigation of the effects of oxide surface layers. Newly developed charge-optimized many body [Liang et al., Mater. Sci. Eng., R 74, 255 (2013)] potentials are used to perform fully reactive molecular dynamics simulations which elucidate the effects that metal-oxide layers have on the mechanical propertiesmore » of a copper thin-film. Simulated tensile tests are performed on thin-films while using different strain-rates, temperatures, and oxide thicknesses to evaluate changes in yield stress, modulus, and failure mechanisms. Findings indicate that copper-thin film mechanical properties are strongly affected by native oxide layers. The formed oxide layers have an amorphous structure with lower Cu-O bond-densities than bulk CuO, and a mixture of Cu{sub 2}O and CuO charge character. It is found that oxidation will cause modifications to the strain response of the elastic modulii, producing a stiffened modulii at low temperatures (<75 K) and low strain values (<5%), and a softened modulii at higher temperatures. While under strain, structural reorganization within the oxide layers facilitates brittle yielding through nucleation of defects across the oxide/metal interface. The oxide-free copper thin-film yielding mechanism is found to be a tensile-axis reorientation and grain creation. The oxide layers change the observed yielding mechanism, allowing for the inner copper thin-film to sustain an FCC-to-BCC transition during yielding. The mechanical properties are fit to a thermodynamic model based on classical nucleation theory. The fit implies that the oxidation of the films reduces the activation volume for yielding.« less

Fabrication and characterization of silver- and copper-coated Nylon 6 forcespun nanofibers by thermal evaporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mihut, Dorina M., E-mail: dorinamm@yahoo.com; Lozano, Karen; Foltz, Heinrich

2014-11-01

Silver and copper nanoparticles were deposited as thin films onto substrates consisting of Nylon 6 nanofibers manufactured using forcespinning{sup ®} equipment. Different rotational speeds were used to obtain continuous nanofibers of various diameters arranged as nonwoven mats. The Nylon 6 nanofibers were collected as successive layers on frames, and a high-vacuum thermal evaporation method was used to deposit the silver and copper thin films on the nanofibers. The structures were investigated using scanning electron microscopy–scanning transmission electron microscopy, atomic force microscopy, x-ray diffraction, and electrical resistance measurements. The results indicate that evaporated silver and copper nanoparticles were successfully deposited onmore » Nylon 6 nanofibers as thin films that adhered well to the polymer substrate while the native morphology of the nanofibers were preserved, and electrically conductive nanostructures were achieved.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laskowski, Lukasz, E-mail: lukasz.laskowski@kik.pcz.pl; Laskowska, Magdalena, E-mail: magdalena.laskowska@onet.pl; Jelonkiewicz, Jerzy, E-mail: jerzy.jelonkiewicz@kik.pcz.pl

The SBA-15 silica thin films containing copper ions anchored inside channels via propyl phosphonate groups are investigated. Such materials were prepared in the form of thin films, with hexagonally arranged pores, laying rectilinear to the substrate surface. However, in the case of our thin films, their free standing form allowed for additional research possibilities, that are not obtainable for typical thin films on a substrate. The structural properties of the samples were investigated by X-ray reflectometry, atomic force microscopy (AFM) and transmission electron microscopy (TEM). The molecular structure was examined by Raman spectroscopy supported by numerical simulations. Magnetic measurements (SQUIDmore » magnetometry and EPR spectroscopy) showed weak antiferromagnetic interactions between active units inside silica channels. Consequently, the pores arrangement was determined and the process of copper ions anchoring by propyl phosphonate groups was verified in unambiguous way. Moreover, the type of interactions between magnetic atoms was determined. - Highlights: • Functionalized free-standing SBA-15 thin films were synthesized for a first time. • Thin films synthesis procedure was described in details. • Structural properties of the films were thoroughly investigated and presented. • Magnetic properties of the novel material was investigated and presented.« less

In situ conductance measurements of copper phthalocyanine thin film growth on sapphire [0001].

PubMed

Murdey, Richard; Sato, Naoki

2011-06-21

The current flowing through a thin film of copper phthalocyanine vacuum deposited on a single crystal sapphire [0001] surface was measured during film growth from 0 to 93 nm. The results, expressed as conductance vs. nominal film thickness, indicate three distinct film growth regions. Conductive material forms below about 5 nm and again above 35 nm, but in the intermediate thicknesses the film conductance was observed to decrease with increasing film thickness. With the aid of ac-AFM topology images taken ex situ, the conductance results are explained based on the Stranski-Krastanov (2D + 3D) film growth mechanism, in which the formation of a thin wetting layer is followed by the growth of discrete islands that eventually coalesce into an interpenetrating, conductive network. © 2011 American Institute of Physics

Hall effect of copper nitride thin films

NASA Astrophysics Data System (ADS)

Yue, G. H.; Liu, J. Z.; Li, M.; Yuan, X. M.; Yan, P. X.; Liu, J. L.

2005-08-01

The Hall effect of copper nitride (Cu3N) thin films was investigated in our work. Cu3N films were deposited on glass substrates by radio-frequency (RF) magnetron sputtering at different temperatures using pure copper as the sputtering target. The Hall coefficients of the films are demonstrated to be dependent on the deposition gas flow rate and the measuring temperature. Both the Hall coefficient and resistance of the Cu3N films increase with the nitrogen gas flow rate at room temperature, while the Hall mobility and the carrier density of the films decrease. As the temperature changed from 100 K to 300 K, the Hall coefficient and the resistivity of the films decreased, while the carrier density increased and Hall mobility shows no great change. The energy band gap of the Cu3N films deduced from the curve of the common logarithm of the Hall coefficient against 1/T is 1.17-1.31 eV.

Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

DOEpatents

Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L.; Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

1998-03-24

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Contact-metal dependent current injection in pentacene thin-film transistors

NASA Astrophysics Data System (ADS)

Wang, S. D.; Minari, T.; Miyadera, T.; Tsukagoshi, K.; Aoyagi, Y.

2007-11-01

Contact-metal dependent current injection in top-contact pentacene thin-film transistors is analyzed, and the local mobility in the contact region was found to follow the Meyer-Neldel rule. An exponential trap distribution, rather than the metal/organic hole injection barrier, is proposed to be the dominant factor of the contact resistance in pentacene thin-film transistors. The variable temperature measurements revealed a much narrower trap distribution in the copper contact compared with the corresponding gold contact, and this is the origin of the smaller contact resistance for copper despite a lower work function.

Effect of copper doping sol-gel ZnO thin films: physical properties and sensitivity to ethanol vapor

NASA Astrophysics Data System (ADS)

Boukaous, Chahra; Benhaoua, Boubaker; Telia, Azzedine; Ghanem, Salah

2017-10-01

In the present paper, the effect of copper doping ZnO thin films, deposited using a sol-gel dip-coating technique, on the structural, optical and ethanol vapor-sensing properties, was investigated. The range of the doping content is 0 wt. %-5 wt. % Cu/Zn and the films’ properties were studied using x-ray diffraction, scanning electron microscopy and a UV-vis spectrophotometer. The obtained results indicated that undoped and copper-doped zinc oxide thin films have polycrystalline wurtzite structure with (1 0 1) preferred orientation. All samples have a smooth and dense structure free of pinholes. A decrease in the band gap with Cu concentration in the ZnO network was observed. The influence of the dopant on ethanol vapor-sensing properties shows an increase in the film sensitivity to the ethanol vapor within the Cu concentration.

Work function measurements of copper nanoparticle intercalated polyaniline nanocomposite thin films

NASA Astrophysics Data System (ADS)

Patil, U. V.; Ramgir, Niranjan S.; Bhogale, A.; Debnath, A. K.; Muthe, K. P.; Gadkari, S. C.; Kothari, D. C.

2017-05-01

The nature of contact between the electrode and the sensing material plays a crucial role in governing the sensing mechanism. Thin films of polyaniline (PANI) and copper-polyaniline nanocomposite (NC) have been deposited at room temperatures by in-situ oxidative polymerization of aniline in the presence of Cu nanoparticles. For sensing applications a thin film Au (gold) ˜100 nm is deposited and used as a conducting electrode. To understand the nature of contact (i.e., ohmic or Schottky) the work function of the conducting polyaniline and nanocomposite films were measured using Kelvin Probe method. I-V characteristics of PANI and NC films investigated at room temperatures further corroborates and confirms the formation of Ohmic contact as evident from work function measurements.

Synthesis, Optical and Photoluminescence Properties of Cu-Doped Zno Nano-Fibers Thin Films: Nonlinear Optics

NASA Astrophysics Data System (ADS)

Ganesh, V.; Salem, G. F.; Yahia, I. S.; Yakuphanoglu, F.

2018-03-01

Different concentrations of copper-doped zinc oxide thin films were coated on a glass substrate by sol-gel/spin-coating technique. The structural properties of pure and Cu-doped ZnO films were characterized by different techniques, i.e., atomic force microscopy (AFM), photoluminescence and UV-Vis-NIR spectroscopy. The AFM study revealed that pure and doped ZnO films are formed as nano-fibers with a granular structure. The photoluminescence spectra of these films showed a strong ultraviolet emission peak centered at 392 nm and a strong blue emission peak cantered at 450 nm. The optical band gap of the pure and copper-doped ZnO thin films calculated from optical transmission spectra (3.29-3.23 eV) were found to be increasing with increasing copper doping concentration. The refractive index dispersion curve of pure and Cu-doped ZnO film obeyed the single-oscillator model. The optical dispersion parameters such as E o , E d , and n_{∞}2 were calculated. Further, the nonlinear refractive index and nonlinear optical susceptibility were also calculated and interpreted.

Process Of Bonding Copper And Tungsten

DOEpatents

Slattery, Kevin T.; Driemeyer, Daniel E.

1999-11-23

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

PubMed Central

Gómez-Pozos, Heberto; Arredondo, Emma Julia Luna; Maldonado Álvarez, Arturo; Biswal, Rajesh; Kudriavtsev, Yuriy; Pérez, Jaime Vega; Casallas-Moreno, Yenny Lucero; Olvera Amador, María de la Luz

2016-01-01

A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM) and secondary ion mass spectroscopy (SIMS), respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas. PMID:28787885

SEM and AFM studies of dip-coated CuO nanofilms.

PubMed

Dhanasekaran, V; Mahalingam, T; Ganesan, V

2013-01-01

Cupric oxide (CuO) semiconducting thin films were prepared at various copper sulfate concentrations by dip coating. The copper sulfate concentration was varied to yield films of thicknesses in the range of 445-685 nm by surface profilometer. X-ray diffraction patterns revealed that the deposited films were polycrystalline in nature with monoclinic structure of (-111) plane. The surface morphology and topography of monoclinic-phase CuO thin films were examined using scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. Surface roughness profile was plotted using WSxM software and the estimated surface roughness was about ∼19.4 nm at 30 mM molar concentration. The nanosheets shaped grains were observed by SEM and AFM studies. The stoichiometric compound formation was observed at 30 mM copper sulfate concentration prepared film by EDX. The indirect band gap energy of CuO films was increased from 1.08 to 1.20 eV with the increase of copper sulfate concentrations. Copyright © 2012 Wiley Periodicals, Inc.

Investigation of Structural, Compositional and Anti-Microbial Properties of Copper Thin Film Using Direct Current Magnetron Sputtering for Surgical Instruments

NASA Astrophysics Data System (ADS)

Kalaiselvam, S.; Sandhya, J.; Krishnan, K. V. Hari; Kedharnath, A.; Arulkumar, G.; Roseline, A. Ameelia

Surgical instruments and other bioimplant devices, owing to their importance in the biomedical industry require high biocompatibility to be used in the human body. Nevertheless, issues of compatibility, bacterial infections are quite common in such devices. Hence development of surface coatings on various substrates for implant applications is a promising technique to combat the issues arising in these implant materials. The present investigation aims at coating copper on stainless steel substrate using DC Magnetron sputtering which is used to achieve film of required thickness (0.5-8μm). The deposition pressure, substrate temperature, power supply, distance between the specimen and target are optimized and maintained constant, while the sputtering time (30-110min) is varied. The sputtered copper thin film’s morphology, composition are characterized by SEM and EDAX. X-ray diffraction analysis shows copper oriented on (111) and (002) and copper oxide on (111) planes. The contact angle of copper thin film is 92∘ while AISI 316L shows 73∘. The antimicrobial studies carried in Staphylococcus aureus, Escherichia Coli, Klebsiella pneumonia and Candida albicans show that the maximum reduction was seen upto 35, 26, 54, 39CFU/mL, respectively after 24h. The cell viability is studied by MTT assay test on Vero cell line for 24h, 48h and 72h and average cell viability is 43.85%. The copper release from the thin film to the culture medium is 6691μg/L (maximum) is estimated from AAS studies. The copper coated substrate does not show much reaction with living Vero cells whereas the bacteria and fungi are found to be destroyed.

Effect of copper doping on the photocatalytic activity of ZnO thin films prepared by sol-gel method

NASA Astrophysics Data System (ADS)

Saidani, T.; Zaabat, M.; Aida, M. S.; Boudine, B.

2015-12-01

In the present work, we prepared undoped and copper doped ZnO thin films by the sol-gel dip coating method on glass substrates from zinc acetate dissolved in a solution of ethanol. The objective of our work is to study the effect of Cu doping with different concentrations on structural, morphological, optical properties and photocatalytic activity of ZnO thin films. For this purpose, we have used XRD to study the structural properties, and AFM to determine the morphology of the surface of the ZnO thin films. The optical properties and the photocatalytic degradation of the films were examined by UV-visibles spectrophotometer. The Tauc method was used to estimate the optical band gap. The XRD spectra indicated that the films have an hexagonal wurtzite structure, which gradually deteriorated with increasing Cu concentration. The results showed that the incorporation of Cu decreases the crystallite size. The AFM study showed that an increase of the concentration of Cu causes the decrease of the surface roughness, which passes from 20.2 for Un-doped ZnO to 12.16 nm for doped ZnO 5 wt% Cu. Optical measurements have shown that all the deposited films show good optical transmittance (77%-92%) in the visible region and increases the optical gap with increasing Cu concentration. The presence of copper from 1% to 5 wt% in the ZnO thin films is found to decelerate the photocatalytic process.

Influence of Cu-Ti thin film surface properties on antimicrobial activity and viability of living cells.

PubMed

Wojcieszak, Damian; Kaczmarek, Danuta; Antosiak, Aleksandra; Mazur, Michal; Rybak, Zbigniew; Rusak, Agnieszka; Osekowska, Malgorzata; Poniedzialek, Agata; Gamian, Andrzej; Szponar, Bogumila

2015-11-01

The paper describes properties of thin-film coatings based on copper and titanium. Thin films were prepared by co-sputtering of Cu and Ti targets in argon plasma. Deposited coatings consist of 90at.% of Cu and 10at.% of Ti. Characterization of the film was made on the basis of investigations of microstructure and physicochemical properties of the surface. Methods such as scanning electron microscopy, x-ray microanalysis, x-ray diffraction, x-ray photoelectron spectroscopy, atomic force microscopy, optical profilometry and wettability measurements were used to assess the properties of deposited thin films. An impact of Cu-Ti coating on the growth of selected bacteria and viability of the living cells (line L929, NCTC clone 929) was described in relation to the structure, surface state and wettability of the film. It was found that as-deposited films were amorphous. However, in such surroundings the nanocrystalline grains of 10-15nm and 25-35nm size were present. High surface active area with a roughness of 8.9nm, had an effect on receiving relatively high water contact angle value (74.1°). Such wettability may promote cell adhesion and result in an increase of the probability of copper ion transfer from the film surface into the cell. Thin films revealed bactericidal and fungicidal effects even in short term-contact. High activity of prepared films was directly related to high amount (ca. 51 %) of copper ions at 1+ state as x-ray photoelectron spectroscopy results have shown. Copyright © 2015 Elsevier B.V. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandoval-Paz, M.G., E-mail: myrnasandoval@udec.cl; Rodríguez, C.A.; Porcile-Saavedra, P.F.

Copper (I) selenide thin films with orthorhombic and cubic structure were deposited on glass substrates by using the chemical bath deposition technique. The effects of the solution pH on the films growth and subsequently the structural, optical and electrical properties of the films were studied. Films with orthorhombic structure were obtained from baths wherein both metal complex and hydroxide coexist; while films with cubic structure were obtained from baths where the metal hydroxide there is no present. The structural modifications are accompanied by changes in bandgap energy, morphology and electrical resistivity of the films. - Graphical abstract: “Study of themore » crystallographic phase change on copper (I) selenide thin films prepared through chemical bath deposition by varying the pH of the solution” by M. G. Sandoval-Paz, C. A. Rodríguez, P. F. Porcile-Saavedra, C. Trejo-Cruz. Display Omitted - Highlights: • Copper (I) selenide thin films were obtained by chemical bath deposition. • Orthorhombic to cubic phase change was induced by varying the reaction solution pH. • Orthorhombic phase is obtained mainly from a hydroxides cluster mechanism. • Cubic phase is obtained mainly from an ion by ion mechanism. • Structural, optical and electrical properties are presented as a function of pH.« less

Thin-Film Photovoltaics: Status and Applications to Space Power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Hepp, Aloysius F.

1991-01-01

The potential applications of thin film polycrystalline and amorphous cells for space are discussed. There have been great advances in thin film solar cells for terrestrial applications; transfer of this technology to space applications could result in ultra low weight solar arrays with potentially large gains in specific power. Recent advances in thin film solar cells are reviewed, including polycrystalline copper iridium selenide and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon alloys. The possibility of thin film multi bandgap cascade solar cells is discussed.

Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

DOEpatents

Albin, David S.; Noufi, Rommel

2015-06-09

Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

Structural, mechanical and magnetic study on galvanostatic electroplated nanocrystalline NiFeP thin films

NASA Astrophysics Data System (ADS)

Kalaivani, A.; Senguttuvan, G.; Kannan, R.

2018-03-01

Nickel based alloys has a huge applications in microelectronics and micro electromechanical systems owing to its superior soft magnetic properties. With the advantages of simplicity, cost-effectiveness and controllable patterning, electroplating processes has been chosen to fabricate thin films in our work. The soft magnetic NiFeP thin film was successfully deposited over the surface of copper plate through galvanostatic electroplating method by applying constant current density of 10 mA cm-2 for a deposition rate for half an hour. The properties of the deposited NiFeP thin films were analyzed by subjecting it into different physio-chemical characterization such as XRD, SEM, EDAX, AFM and VSM. XRD pattern confirms the formation of NiFeP particles and the structural analysis reveals that the NiFeP particles were uniformly deposited over the surface of copper substrate. The surface roughness analysis of the NiFeP films was done using AFM analysis. The magnetic studies and the hardness of the thin film were evaluated from the VSM and hardness test. The NiFeP thin films possess lower coercivity with higher magnetization value of 69. 36 × 10-3 and 431.92 Gauss.

Dry etching of copper phthalocyanine thin films: effects on morphology and surface stoichiometry.

PubMed

Van Dijken, Jaron G; Brett, Michael J

2012-08-24

We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

Influence of Post-Heat Treatment of ZnO:Al Transparent Electrode for Copper Indium Gallium Selenide Thin Film Solar Cell.

PubMed

Eom, Taewoo; Park, Jeong Eun; Park, Sang Yong; Park, Jeong Hoon; Bweupe, Jackson; Lim, Donggun

2018-09-01

Copper indium gallium selenide (CIGS) thin film solar cells have been regarded as a candidate for energy conversion devices owing to their high absorption coefficient, high temperature stability, and low cost. ZnO:Al thin film is commonly used in CIGS solar cells as a window layer. In this study, ZnO:Al films were deposited on glass under various post-heat temperature using RF sputtering to observe the characteristics of ZnO:Al films such as Hall mobility, carrier concentration, and resistivity; subsequently, the ZnO:Al films were applied to a CIGS solar cell as a window. CIGS solar cells fabricated with various ZnO:Al films were analyzed in order to investigate their influence. The test results showed that the improvement of ZnO:Al characteristics affects Jsc and Voc in the solar cell through reduced recombination and increase of optical property.

Non-destructive evaluation of nano-sized structure of thin film devices by using small angle neutron scattering.

PubMed

Shin, E J; Seong, B S; Choi, Y; Lee, J K

2011-01-01

Nano-sized multi-layers copper-doped SrZrO3, platinum (Pt) and silicon oxide (SiO2) on silicon substrates were prepared by dense plasma focus (DPF) device with the high purity copper anode tip and analyzed by using small angle neutron scattering (SANS) to establish a reliable method for the non-destructive evaluation of the under-layer structure. Thin film was well formed at the time-to-dip of 5 microsec with stable plasma of DPF. Several smooth intensity peaks were periodically observed when neutron beam penetrates the thin film with multi-layers perpendicularly. The platinum layer is dominant to intensity peaks, where the copper-doped SrZnO3 layer next to the platinum layer causes peak broadening. The silicon oxide layer has less effect on the SANS spectra due to its relative thick thickness. The SANS spectra shows thicknesses of platinum and copper-doped SrZnO3 layers as 53 and 25 nm, respectively, which are well agreement with microstructure observation.

In situ probing of pulsed laser melting and laser-induced periodic surface structures formation by dynamic reflectivity

NASA Astrophysics Data System (ADS)

Huynh, T. T. D.; Semmar, N.

2017-09-01

The melting process and nanostructure formation induced by nanosecond and picosecond laser pulses on bulk silicon and copper thin film were studied by ex situ analysis and in situ real time reflectivity. Three different probing wavelengths (633, 473 and 326 nm) were used during the pump laser processing and were correlated to the beam parameters (pulse duration, laser fluence and number of laser shots) and copper thin film thickness. On a silicon surface using a KrF laser beam (27 ns, 1 Hz, 248 nm), the melting threshold was determined close to 700 mJ cm-2 and the melting duration increased from 10 to 130 ns as the fluence increased from 700 to 1750 mJ cm-2. Nanostructures with a spatial period close to the laser wavelength were formed on both copper thin film and silicon substrate after nanosecond Nd:YAG laser (10 ns, 266 nm, 1 Hz) irradiation. In the picosecond regime, using an Nd:YAG laser (40 ps, 266 nm, 1 Hz), different nanostructures, from spikes to laser-induced periodic surface structures, were formed on 500 nm copper thin film and were analyzed with respect to the drop in dynamic reflectivity changes versus the number of laser shots.

Electrochemical deposition of layered copper thin films based on the diffusion limited aggregation

PubMed Central

Wei, Chenhuinan; Wu, Guoxing; Yang, Sanjun; Liu, Qiming

2016-01-01

In this work layered copper films with smooth surface were successfully fabricated onto ITO substrate by electrochemical deposition (ECD) and the thickness of the films was nearly 60 nm. The resulting films were characterized by SEM, TEM, AFM, XPS, and XRD. We have investigated the effects of potential and the concentration of additives and found that 2D dendritic-like growth process leaded the formation of films. A suitable growth mechanism based on diffusion limited aggregation (DLA) mechanism for the copper films formation is presented, which are meaningful for further designing homogeneous and functional films. PMID:27734900

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schultz, Bradley M.; Li, Nan; Economy, David R.

Mathematical models suggest that the strain along the film formed by parallel passes of a nanoindentation probe in contact with the film can be either homogenous or heterogeneous, depending on contact pressure and spacing between passes. Here, in this study, a 1 µm copper thin film was worn with a cono-spherical diamond probe with normal loads ranging from 25 to 800 µN and wear box edge lengths of 40, 60, and 80 µm. The nanoindenter counterface was rastered across the surface to mimic dry sliding wear. To determine potential strain field changes, 10-step quasi-static indents (200–2000 µN) were performed usingmore » nanoindentation inside the wear boxes created at various loads to determine if a strain field alteration could be observed in changes in hardness of the copper thin film. It was shown that there was a softening effect in the hardness for normal loads < 400 µN used during nanowear compared to the as-deposited copper. Normal loads ≥ 400 µN had a similar or higher hardness than the as-deposited copper. This is believed to have occurred due to a relaxation in the residual stresses created during deposition in the copper thin films at lower loads, which caused a decrease in hardness. Conversely, at the higher loads, increased deformation leads to an increase in hardness. Lastly, all of the wear boxes displayed a higher estimated strain hardening exponent than the as-deposited material.« less

Method of accurate thickness measurement of boron carbide coating on copper foil

DOEpatents

Lacy, Jeffrey L.; Regmi, Murari

2017-11-07

A method is disclosed of measuring the thickness of a thin coating on a substrate comprising dissolving the coating and substrate in a reagent and using the post-dissolution concentration of the coating in the reagent to calculate an effective thickness of the coating. The preferred method includes measuring non-conducting films on flexible and rough substrates, but other kinds of thin films can be measure by matching a reliable film-substrate dissolution technique. One preferred method includes determining the thickness of Boron Carbide films deposited on copper foil. The preferred method uses a standard technique known as inductively coupled plasma optical emission spectroscopy (ICPOES) to measure boron concentration in a liquid sample prepared by dissolving boron carbide films and the Copper substrates, preferably using a chemical etch known as ceric ammonium nitrate (CAN). Measured boron concentration values can then be calculated.

Basic Operating Mode | Materials Science | NREL

Science.gov Websites

indium diselenide thin film, showing elemental maps of copper (left) and indium (right). CuInSe2 thin film. Cu and In elemental maps obtained by EDS. In its basic operating mode, scanning electron

Deposition of Antimicrobial Copper-Rich Coatings on Polymers by Atmospheric Pressure Jet Plasmas

PubMed Central

Kredl, Jana; Kolb, Juergen F.; Schnabel, Uta; Polak, Martin; Weltmann, Klaus-Dieter; Fricke, Katja

2016-01-01

Inanimate surfaces serve as a permanent reservoir for infectious microorganisms, which is a growing problem in areas in everyday life. Coating of surfaces with inorganic antimicrobials, such as copper, can contribute to reduce the adherence and growth of microorganisms. The use of a DC operated air plasma jet for the deposition of copper thin films on acrylonitrile butadiene styrene (ABS) substrates is reported. ABS is a widespread material used in consumer applications, including hospitals. The influence of gas flow rate and input current on thin film characteristics and its bactericidal effect have been studied. Results from X-ray photoelectron spectroscopy (XPS) and atomic force microscopy confirmed the presence of thin copper layers on plasma-exposed ABS and the formation of copper particles with a size in the range from 20 to 100 nm, respectively. The bactericidal properties of the copper-coated surfaces were tested against Staphylococcus aureus. A reduction in growth by 93% compared with the attachment of bacteria on untreated samples was observed for coverage of the surface with 7 at. % copper. PMID:28773396

Fixation of the stressed state of glass plates by coating them with thin films using a plasma focus installation

NASA Astrophysics Data System (ADS)

Kolokoltsev, V. N.; Degtiarev, V. F.; Borovitskaya, I. V.; Nikulin, V. Ya.; Peregudova, E. N.; Silin, P. V.; Eriskin, A. A.

2018-01-01

Elastic deformation in transparent mediums is usually studied by the photoelasticity method. For opaque mediums the method of film coating and strain gauge method are used. After the external load was removed, the interference pattern corresponding to elastic deformation of the material disappears. It is found that the elastic deformation state of the thin glass plate under the action of concentrated load can be fixed during the deposition of a thin metal film. Deposition of thin copper films was carried out by passing of plasma through the copper tube installed inside the Plasma Focus installation. After removing of the load, interference pattern on the glass plates was observed in the form of Newton’s rings and isogers in non-monochromatic light on the CCD scanners which uses uorescent lamps with cold cathode. It is supposed that the copper film fixes the relief of the surface of the glass plate at the time of deformation and saves it when the load is removed. In the case of a concentrated load, this relief has the shape of a thin lens of large radius. For this reason, the interference of coherent light rays in a thin air gap between the glass of the scanners atbed and the lens surface has the shape of Newton's rings. In this case, when scanning the back side of the plate, isogyres are observed. The presented method can be used in the analysis of the mechanical stress in a various optical elements.

Femtosecond to nanosecond excited state dynamics of vapor deposited copper phthalocyanine thin films.

PubMed

Caplins, Benjamin W; Mullenbach, Tyler K; Holmes, Russell J; Blank, David A

2016-04-28

Vapor deposited thin films of copper phthalocyanine (CuPc) were investigated using transient absorption spectroscopy. Exciton-exciton annihilation dominated the kinetics at high exciton densities. When annihilation was minimized, the observed lifetime was measured to be 8.6 ± 0.6 ns, which is over an order of magnitude longer than previous reports. In comparison with metal free phthalocyanine (H2Pc), the data show evidence that the presence of copper induces an ultrafast relaxation process taking place on the ca. 500 fs timescale. By comparison to recent time-resolved photoemission studies, this is assigned as ultrafast intersystem crossing. As the intersystem crossing occurs ca. 10(4) times faster than lifetime decay, it is likely that triplets are the dominant excitons in vapor deposited CuPc films. The exciton lifetime of CuPc thin films is ca. 35 times longer than H2Pc thin films, while the diffusion lengths reported in the literature are typically quite similar for the two materials. These findings suggest that despite appearing to be similar materials at first glance, CuPc and H2Pc may transport energy in dramatically different ways. This has important implications on the design and mechanistic understanding of devices where phthalocyanines are used as an excitonic material.

Integrated thin film cadmium sulfide solar cell module

NASA Technical Reports Server (NTRS)

Mickelsen, R. A.; Abbott, D. D.

1971-01-01

The design, development, fabrication and tests of flexible integrated thin-film cadmium sulfide solar cells and modules are discussed. The development of low cost and high production rate methods for interconnecting cells into large solar arrays is described. Chromium thin films were applied extensively in the deposited cell structures as a means to: (1) achieve high adherence between the cadmium sulfide films and the vacuum-metallized copper substrates, (2) obtain an ohmic contact to the cadmium sulfide films, and (3) improve the adherence of gold films as grids or contact areas.

Control of the Structure of Diffusion Layer in Carbon Steels Under Nitriding with Preliminary Deposition of Copper Oxide Catalytic Films

NASA Astrophysics Data System (ADS)

Petrova, L. G.; Aleksandrov, V. A.; Malakhov, A. Yu.

2017-07-01

The effect of thin films of copper oxide deposited before nitriding on the phase composition and the kinetics of growth of diffusion layers in carbon steels is considered. The process of formation of an oxide film involves chemical reduction of pure copper on the surface of steel specimens from a salt solution and subsequent oxidation under air heating. The oxide film exerts a catalytic action in nitriding of low- and medium-carbon steels, which consists in accelerated growth of the diffusion layer, the nitride zone in the first turn. The kinetics of the nitriding process and the phase composition of the layer are controlled by the thickness of the copper oxide precursor, i.e., the deposited copper film.

Effect of scanning speed on continuous wave laser scribing of metal thin films: theory and experiment

NASA Astrophysics Data System (ADS)

Shahbazi, AmirHossein; Koohian, Ata; Madanipour, Khosro

2017-01-01

In this paper continuous wave laser scribing of the metal thin films have been investigated theoretically and experimentally. A formulation is presented based on parameters like beam power, spot size, scanning speed and fluence thresholds. The role of speed on the transient temperature and tracks width is studied numerically. By using two frameworks of pulsed laser ablation of thin films and laser printing on paper, the relation between ablation width and scanning speed has been derived. Furthermore, various speeds of the focused 450 nm continuous laser diode with an elliptical beam spot applied to a 290 nm copper thin film coated on glass, experimentally. The beam power was 150 mW after spatial filtering. By fitting the theoretical formulation to the experimental data, the threshold fluence and energy were obtained to be 13.2 J mm-2 and 414~μ J respectively. An anticipated theoretical parameter named equilibrium~border was verified experimentally. It shows that in the scribing of the 290 nm copper thin film, at a distance where the intensity reaches about 1/e of its maximum value, the absorbed fluence on the surface is equal to zero. Therefore the application of continuous laser in metal thin film ablation has different mechanism from pulsed laser drilling and beam scanning in printers.

A Solution Processable High-Performance Thermoelectric Copper Selenide Thin Film.

PubMed

Lin, Zhaoyang; Hollar, Courtney; Kang, Joon Sang; Yin, Anxiang; Wang, Yiliu; Shiu, Hui-Ying; Huang, Yu; Hu, Yongjie; Zhang, Yanliang; Duan, Xiangfeng

2017-06-01

A solid-state thermoelectric device is attractive for diverse technological areas such as cooling, power generation and waste heat recovery with unique advantages of quiet operation, zero hazardous emissions, and long lifetime. With the rapid growth of flexible electronics and miniature sensors, the low-cost flexible thermoelectric energy harvester is highly desired as a potential power supply. Herein, a flexible thermoelectric copper selenide (Cu 2 Se) thin film, consisting of earth-abundant elements, is reported. The thin film is fabricated by a low-cost and scalable spin coating process using ink solution with a truly soluble precursor. The Cu 2 Se thin film exhibits a power factor of 0.62 mW/(m K 2 ) at 684 K on rigid Al 2 O 3 substrate and 0.46 mW/(m K 2 ) at 664 K on flexible polyimide substrate, which is much higher than the values obtained from other solution processed Cu 2 Se thin films (<0.1 mW/(m K 2 )) and among the highest values reported in all flexible thermoelectric films to date (≈0.5 mW/(m K 2 )). Additionally, the fabricated thin film shows great promise to be integrated with the flexible electronic devices, with negligible performance change after 1000 bending cycles. Together, the study demonstrates a low-cost and scalable pathway to high-performance flexible thin film thermoelectric devices from relatively earth-abundant elements. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Superconducting structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2003-04-01

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Superconducting Structure

DOEpatents

Kwon, Chuhee; Jia, Quanxi; Foltyn, Stephen R.

2005-09-13

A superconductive structure including a dielectric oxide substrate, a thin buffer layer of a superconducting material thereon; and, a layer of a rare earth-barium-copper oxide superconducting film thereon the thin layer of yttrium-barium-copper oxide, the rare earth selected from the group consisting of samarium, gadolinium, ytterbium, erbium, neodymium, dysprosium, holmium, lutetium, a combination of more than one element from the rare earth group and a combination of one or more elements from the rare earth group with yttrium, the buffer layer of superconducting material characterized as having chemical and structural compatibility with the dielectric oxide substrate and the rare earth-barium-copper oxide superconducting film is provided.

Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, S.; Ma, B.; Narayanan, M.

2012-01-01

Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) films were deposited by pulsed laser deposition on copper foils with low-temperature self-buffered layers. The deposition conditions included a low oxygen partial pressure and a temperature of 700 C to crystallize the films without the formation of secondary phases and substrate oxidation. The results from x-ray diffraction and scanning electron microscopy indicated that the microstructure of the BST films strongly depended on the growth temperature. The use of the self-buffered layer improved the dielectric properties of the deposited BST films. The leakage current density of the BST films on the copper foil was 4.4 xmore » 10{sup -9} A cm{sup -2} and 3.3 x 10{sup -6} A cm{sup -2} with and without the self-buffered layer, respectively. The ferroelectric hysteresis loop for the BST thin film with buffer layer was slim, in contrast to the distorted loop observed for the film without the buffer layer. The permittivity (7 0 0) and dielectric loss tangent (0.013) of the BST film on the copper foil with self-buffered layer at room temperature were comparable to those of the film on metal and single-crystal substrates.« less

Copper Phthalocyanine Functionalized Single-Walled Carbon Nanotubes: Thin Films for Optical Detection.

PubMed

Banimuslem, Hikmat; Hassan, Aseel; Basova, Tamara; Durmuş, Mahmut; Tuncel, Sinem; Esenpinar, Aliye Asli; Gürek, Ayşe Gül; Ahsen, Vefa

2015-03-01

Thin films of non-covalently hybridized single-walled carbon nanotubes (SWCNT) and tetra-substituted copper phthalocyanine (CuPcR4) molecules have been produced from their solutions in dimethylformamide (DMF). FTIR spectra revealed the 7π-7π interaction between SWCNTs and CuPcR4 molecules. DC conductivity of films of acid-treated SWCNT/CuPcR4 hybrid has increased by more than three orders of.magnitude in comparison with conductivity of CuPcR4 films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements have shown that films obtained from the acid-treated SWCNTs/CuPcR4 hybrids demonstrated more homogenous surface which is ascribed to the highly improved solubility of the hybrid powder in DMF Using total internal reflection ellipsometry spectroscopy (TIRE), thin films of the new hybrid have been examined as an optical sensing membrane for the detection of benzo[a]pyrene in water to demonstrate the sensing properties of the hybrid.

Sputtered (barium(x), strontium(1-x))titanate, BST, thin films on flexible copper foils for use as a non-linear dielectric

NASA Astrophysics Data System (ADS)

Laughlin, Brian James

Ferroelectric thin film dielectrics have a non-linear DC bias dependent permittivity and can be used as the dielectric between metal electrodes to make tunable Metal-Insulator-Metal (MIM) capacitors. Varactors can be used to change the resonance frequency of a circuit allowing high speed frequency switching intra- and inter-band. 2-D geometric arrays of circuitry, where resonant frequency is independently controlled by tunable elements in each section of the array, allow electromagnetic radiation to be focused and the wave front spatial trajectory controlled. BST thin films varactors allow large DC fields to be applied with modest voltages providing large tunabilities. If ferroelectric thin film based devices are to complement or supplant semiconductor varactors as tunable elements then devices must be synthesized using a low cost processing techniques. The Film on Foil process methodology for depositing BST thin films on copper foil substrates was used to create BST/Cu specimens. Sputtering conditions were determined via BST deposition on platinized silicon. Sputtered BST thin films were synthesized on Cu foil substrates and densified using high T, controlled pO2 anneals. XRD showed the absence of Cu2O in as-deposited, post crystallization annealed, and post "re-ox" annealed state. Data showed a polycrystalline BST microstructure with a 55--80 nm grain size and no copper oxidation. HRTEM imaging qualitatively showed evidence of an abrupt BST/Cu interface free from oxide formation. Dielectric properties of Cu/BST/Pt MIM devices were measured as a function of DC bias, frequency, and temperature. A permittivity of 725 was observed with tunability >3:1 while zero bias tan delta of 0.02 saturating to tan delta < 0.003 at high DC bias. No significant frequency dispersion was observed over five decades of frequency. Temperature dependent measurements revealed a broad ferroelectric transition with a maximum at -32°C which sustains a large tunability over -150°C to 150°C. Sputtered BST thin films on copper foils show comparable dielectric properties to CVD deposited films on platinized silicon substrates proving sputtered BST/Cu specimens can reproduce excellent properties using a more cost-effective processing approach. A concept for reducing the temperature dependence was explored. Stacks of multiple compositions of BST thin films were considered as an extension of core-shell structures to a thin film format. Temperature profiles of BST/Cu films were modeled and mathematically combined in simulations of multi-composition film stacks. Simulations showed singular composition BST thin films could meet X7R specifications if a film has a 292 K < TC < 330 K. Simulations of series connected film stacks show only modest temperature profile broadening. Parallel connected dual composition film stacks showed a 75°C temperature range with essentially flat capacitance by simulating compositions that create a DeltaTC = 283°C. Maximum permittivity and temperature profile shape independent of film thickness or composition were assumed for simulations. BST/Cu thickness and compositions series were fabricated and dielectric properties characterized. These studies showed films could be grown from 300 nm and approaching 1 mum without changing the dielectric temperature response. In studying BST composition, an increasing TC shift was observed when increasing Ba mole fraction in BST thin films while tunability >3:1 was maintained. These results provide a route for creating temperature stable capacitors using a BST/Cu embodiment. An effort to reduce surface roughness of copper foil substrates adversely impacted BST film integrity by impairing adhesion. XPS analysis of high surface roughness commercially obtained Cu foils revealed a surface treatment of Zn-Cu-O that was not present on smooth Cu, thus an investigation of surface chemistry was conducted. Sessile drop experiments were performed to characterize Cu-BST adhesion and the effects of metallic Zn and ZnO in this system. The study revealed the work of adhesion of Cu-BST, WCu-BSTa ≈ 0.60 J m-2, an intermediate value relative to noble metals commonly used as electrodes and substrates for electroceramics. Examination of metallic Zn-BST adhesion revealed a dramatic decrease of WZn-BSTa ≈ 0.13 J m-2, while increasing the content of Zn in metallic (Cux,Zn1-x) alloys monotonically reduced WCux,Zn1-x -BSTa . Conversely, a Cu-ZnO interface showed a large work of adhesion, WCu-ZnOa = 2.0 J m-2. These results indicate that a ZnO interlayer between the substrate Cu and the BST thin film provides adequate adhesion for robust films on flexible copper foil substrates. Additionally, this study provided characterization of adhesion for Zn-Al2O3 and Zn-BST; data that does not exist in the open literature. A process has been developed for preparing ultra-smooth copper foils by evaporation and subsequent peel-off of copper metal layers from glass slides. These 15 mum thick substrates exhibited roughness values between 1 and 2 nm RMS and 9 nm RMS over 25 mum2 and 100 mum2 analysis areas, respectively. The deposition and crystallization of BST layers on these ultra-smooth foils is demonstrated. The fully processed dielectric layers exhibited field tunability >5:1, and could withstand fields >750 kV cm-1. High field loss tangents below 0.007 were observed, making these materials excellent candidates for microwave devices. Finally, a process of lamination and contact lithography was used to demonstrate patterning of micron-scale features suitable for microwave circuit element designs.

Growth and characterization of single phase Cu{sub 2}O by thermal oxidation of thin copper films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, Sumita; Sarma, J. V. N.; Gangopadhyay, Subhashis, E-mail: subhagan@yahoo.com

2016-04-13

We report a simple and efficient technique to form high quality single phase cuprous oxide films on glass substrate using thermal evaporation of thin copper films followed by controlled thermal oxidation in air ambient. Crystallographic analysis and oxide phase determination, as well as grain size distribution have been studied using X-ray diffraction (XRD) method, while scanning electron microscopy (SEM) has been utilized to investigate the surface morphology of the as grown oxide films. The formation of various copper oxide phases is found to be highly sensitive to the oxidation temperature and a crystalline, single phase cuprous oxide film can bemore » achieved for oxidation temperatures between 250°C to 320°C. Cu{sub 2}O film surface appeared in a faceted morphology in SEM imaging and a direct band gap of about 2.1 eV has been observed in UV-visible spectroscopy. X-ray photoelectron spectroscopy (XPS) confirmed a single oxide phase formation. Finally, a growth mechanism of the oxide film has also been discussed.« less

Effect of Heat and Laser Treatment on Cu2S Thin Film Sprayed on Polyimide Substrate

NASA Astrophysics Data System (ADS)

Magdy, Wafaa; Mahmoud, Fawzy A.; Nassar, Amira H.

2018-02-01

Three samples of copper sulfide Cu2S thin film were deposited on polyimide substrate by spray pyrolysis using deposition temperature of 400°C and deposition time of about 45 min. One of the samples was left as deposited, another was heat treated, while the third was laser treated. The structural, surface morphological, optical, mechanical, and electrical properties of the films were investigated. X-ray diffraction (XRD) analysis showed that the copper sulfide films were close to copper-rich phase (Cu2S). Increased crystallite size after heat and laser treatment was confirmed by XRD analysis and scanning electron microscopy. Vickers hardness measurements showed that the samples' hardness values were enhanced with increasing crystallite size, representing an inverse Hall-Petch (H-P) effect. The calculated optical bandgap of the treated films was lower than that of the deposited film. Finally, it was found that both heat and laser treatment enhanced the physical properties of the sprayed Cu2S films on polyimide substrate for use in solar energy applications.

Microstructure control of Al-Cu films for improved electromigration resistance

DOEpatents

Frear, D.R.; Michael, J.R.; Romig, A.D. Jr.

1994-04-05

A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200 C to 300 C for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H[sub 2] in N[sub 2] by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200 C and 300 C have [theta]-phase Al[sub 2] Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of [theta]-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the [theta]-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process. 5 figures.

Monitoring the layer-by-layer self-assembly of graphene and graphene oxide by spectroscopic ellipsometry.

PubMed

Zhou, Kai-Ge; Chang, Meng-Jie; Wang, Hang-Xing; Xie, Yu-Long; Zhang, Hao-Li

2012-01-01

Thin films of graphene oxide, graphene and copper (II) phthalocyanine dye have been successfully fabricated by electrostatic layer-by-layer (LbL) assembly approach. We present the first variable angle spectroscopic ellipsometry (VASE) investigation on these graphene-dye hybrid thin films. The thickness evaluation suggested that our LbL assembly process produces highly uniform and reproducible thin films. We demonstrate that the refractive indices of the graphene-dye thin films undergo dramatic variation in the range close to the absorption of the dyes. This investigation provides new insight to the optical properties of graphene containing thin films and shall help to establish an appropriate optical model for graphene-based hybrid materials.

Synthesis and properties of nanocrystalline copper indium oxide thin films deposited by Rf magnetron sputtering.

PubMed

Singh, Mandeep; Singh, V N; Mehta, B R

2008-08-01

Nanocrystalline copper indium oxide (CuInO2) thin films with particle size ranging from 25 nm to 71 nm have been synthesized from a composite target using reactive Rf magnetron sputtering technique. X-ray photoelectron spectroscopy (XPS) combined with glancing angle X-ray diffraction (GAXRD) analysis confirmed the presence of delafossite CuInO2 phase in these films. The optical absorption studies show the presence of two direct band gaps at 3.3 and 4.3 eV, respectively. The resistance versus temperature measurements show thermally activated hopping with activation energy of 0.84 eV to be the conduction mechanism.

Superconducting Thin Films for the Enhancement of Superconducting Radio Frequency Accelerator Cavities

NASA Astrophysics Data System (ADS)

Burton, Matthew C.

Bulk niobium (Nb) superconducting radio frequency (SRF) cavities are currently the preferred method for acceleration of charged particles at accelerating facilities around the world. However, bulk Nb cavities have poor thermal conductance, impose material and design restrictions on other components of a particle accelerator, have low reproducibility and are approaching the fundamental material-dependent accelerating field limit of approximately 50MV/m. Since the SRF phenomena occurs at surfaces within a shallow depth of ˜1 microm, a proposed solution to this problem has been to utilize thin film technology to deposit superconducting thin films on the interior of cavities to engineer the active SRF surface in order to achieve cavities with enhanced properties and performance. Two proposed thin film applications for SRF cavities are: 1) Nb thin films coated on bulk cavities made of suitable castable metals (such as copper or aluminum) and 2) multilayer films designed to increase the accelerating gradient and performance of SRF cavities. While Nb thin films on copper (Cu) cavities have been attempted in the past using DC magnetron sputtering (DCMS), such cavities have never performed at the bulk Nb level. However, new energetic condensation techniques for film deposition, such as High Power Impulse Magnetron Sputtering (HiPIMS), offer the opportunity to create suitably thick Nb films with improved density, microstructure and adhesion compared to traditional DCMS. Clearly use of such novel technique requires fundamental studies to assess surface evolution and growth modes during deposition and resulting microstructure and surface morphology and the correlation with RF superconducting properties. Here we present detailed structure-property correlative research studies done on Nb/Cu thin films and NbN- and NbTiN-based multilayers made using HiPIMS and DCMS, respectively.

CdS thin films prepared by continuous wave Nd:YAG laser

NASA Astrophysics Data System (ADS)

Wang, H.; Tenpas, Eric W.; Vuong, Khanh D.; Williams, James A.; Schuesselbauer, E.; Bernstein, R.; Fagan, J. G.; Wang, Xing W.

1995-08-01

We report new results on continuous wave Nd:YAG laser deposition of cadmium sulfide thin films. Substrates were soda-lime silicate glass, silica glass, silicon, and copper coated formvar sheets. As deposited films were mixtures of cubic and hexagonal phases, with two different grain sizes. As revealed by SEM micrographs, films had smooth surface morphology. As revealed by TEM analysis, grain sizes were extremely small.

Influence of the morphology of the copper(II) phthalocyanine thin film on the performance of organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Jing; Liu, Xueqiang; Wang, Hailong; Hou, Wenlong; Zhao, Lele; Zhang, Haiquan

2017-01-01

Organic thin-film transistors (OTFTs) with high crystallization copper phthalocyanine (CuPc) active layers were fabricated. The performance of CuPc OTFTs was studied without and with treatment by Solvent Vapor Annealing on CuPc film. The values of the threshold voltage without and with solvent-vapor annealing are -17 V and -10.5 V respectively. The field-effect mobility values in saturation region of CuPc thin-film transistors without and with Solvent Vapor Annealing are 0.00027 cm2/V s and 0.0025 cm2/V s respectively. Meanwhile, the high crystallization of the CuPc film with a larger grain size and less grain boundaries can be observed by investigating the morphology of the CuPc active layer through scanning electron microscopy and X-ray diffraction. The experimental results showed the decreased of the resistance of the conducting channel, that led to a performance improvement of the OTFTs.

Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

PubMed Central

Yang, C.; Souchay, D.; Kneiß, M.; Bogner, M.; Wei, H. M.; Lorenz, M.; Oeckler, O.; Benstetter, G.; Fu, Y. Q.; Grundmann, M.

2017-01-01

Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity. PMID:28681842

Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film.

PubMed

Yang, C; Souchay, D; Kneiß, M; Bogner, M; Wei, H M; Lorenz, M; Oeckler, O; Benstetter, G; Fu, Y Q; Grundmann, M

2017-07-06

Thermoelectric devices that are flexible and optically transparent hold unique promise for future electronics. However, development of invisible thermoelectric elements is hindered by the lack of p-type transparent thermoelectric materials. Here we present the superior room-temperature thermoelectric performance of p-type transparent copper iodide (CuI) thin films. Large Seebeck coefficients and power factors of the obtained CuI thin films are analysed based on a single-band model. The low-thermal conductivity of the CuI films is attributed to a combined effect of the heavy element iodine and strong phonon scattering. Accordingly, we achieve a large thermoelectric figure of merit of ZT=0.21 at 300 K for the CuI films, which is three orders of magnitude higher compared with state-of-the-art p-type transparent materials. A transparent and flexible CuI-based thermoelectric element is demonstrated. Our findings open a path for multifunctional technologies combing transparent electronics, flexible electronics and thermoelectricity.

Auger electron spectroscopy and x-ray photoelectron spectroscopy of the biocorrosion of copper by Gum Arabic, BCS and Pseudomonas atlantica exopolymer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jolley, J.G.; Geesey, G.G.; Hankins, M.R.

1987-01-01

Thin films (3.4 nm) of copper on germanium substrates were exposed to 10% Gum Arabic aqueous solution, 1% BCS (aqueous and simulated sea water solutions) and 0.5% Pseudomonas atlantica exopolymer (aqueous and simulated sea water solutions). Pre- and post-exposure characterization were done by Auger electron spectroscopy and x-ray photoelectron spectroscopy. Ancillary graphite furnace atomic absorption spectroscopy was used to monitor the removal process of the copper thin film from the germanium substrate. Results indicate that the copper was oxidized by the Gum Arabic and BCS, and some was removed from the Cu/Ge interface by all three polymers and incorporated intomore » the polymer matrix. Thus biocorrosion of copper was exhibited by the Gum Arabic, BCS and Pseudomonas atlantica exopolymer. 14 refs., 4 figs., 3 tabs.« less

Low-Temperature Oxidation-Free Selective Laser Sintering of Cu Nanoparticle Paste on a Polymer Substrate for the Flexible Touch Panel Applications.

PubMed

Kwon, Jinhyeong; Cho, Hyunmin; Eom, Hyeonjin; Lee, Habeom; Suh, Young Duk; Moon, Hyunjin; Shin, Jaeho; Hong, Sukjoon; Ko, Seung Hwan

2016-05-11

Copper nanomaterials suffer from severe oxidation problem despite the huge cost effectiveness. The effect of two different processes for conventional tube furnace heating and selective laser sintering on copper nanoparticle paste is compared in the aspects of chemical, electrical and surface morphology. The thermal behavior of the copper thin films by furnace and laser is compared by SEM, XRD, FT-IR, and XPS analysis. The selective laser sintering process ensures low annealing temperature, fast processing speed with remarkable oxidation suppression even in air environment while conventional tube furnace heating experiences moderate oxidation even in Ar environment. Moreover, the laser-sintered copper nanoparticle thin film shows good electrical property and reduced oxidation than conventional thermal heating process. Consequently, the proposed selective laser sintering process can be compatible with plastic substrate for copper based flexible electronics applications.

Simulation and measurement of nanometer-scale resistivity of copper films for interconnect applications

NASA Astrophysics Data System (ADS)

Yarimbiyik, Arif Emre

2007-12-01

A highly versatile simulation program is developed and used to examine how the resistivity of thin metal films and lines increases as their dimensions approach and become smaller than the mean fee path of electrons in metals such as copper (size effect). The simulation program: (1) provides a more accurate calculation of surface scattering effects than that obtained from the usual formulation of Fuchs' theory, (2) calculates grain-boundary effects that are consistent with the theory of Mayadas and Shatzkes, (3) includes the effects of surface and grain-boundary scattering either separately or together, and (4) simulates the effect on resistivity if a surface of a film or line has a different value for the scattering parameter. The increase in resistivity with decreasing thickness of thin, evaporated copper films (approximately 10 nm to 150 nm thick) was determined from sheet resistance and film thickness measurements. Good agreement between the experimental results with those of the simulation program was obtained when the measured mean grain sizes were used by the simulation program. The mean of the grain sizes tend to decrease with decreasing film thickness and thereby increase the impact of grain-boundary scattering on the effective resistivity of the film. Estimates of the mean grain size for each film were determined from using, in combination, the electron backscatter diffraction (EBSD) and the X-ray diffraction (XRD) methods. With values for the measured change in sheet resistance with temperature of these films, it is shown that measurements of the electrical film thickness, using Matthiessen's rule, agreed to within 3 nm of the physical measurements (profilometer) of these films. Hence, Matthiessen's rule can continue to be used to measure the thickness of a copper film and, by inference, the cross-sectional area of a copper line for dimensions well below the mean free path of electrons in copper at room temperature (39 nm).

Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

2018-05-01

Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

NASA Astrophysics Data System (ADS)

Zhao, Xu-Wen; Gao, Guan-Yin; Yan, Jian-Min; Chen, Lei; Xu, Meng; Zhao, Wei-Yao; Xu, Zhi-Xue; Guo, Lei; Liu, Yu-Kuai; Li, Xiao-Guang; Wang, Yu; Zheng, Ren-Kui

2018-05-01

Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln =Bi and lanthanides, Ch =S , Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T ≥ 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs-type copper oxyselenide thin films of B i0.94P b0.06CuSeO (BPCSO) with perovskite-type ferroelectric Pb (M g1 /3N b2 /3 ) O3-PbTi O3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami-Larkin-Nagaoka theory, we demonstrate two-dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier-density-related 2D electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

Photoconductivity in reactively evaporated copper indium selenide thin films

NASA Astrophysics Data System (ADS)

Urmila, K. S.; Asokan, T. Namitha; Pradeep, B.; Jacob, Rajani; Philip, Rachel Reena

2014-01-01

Copper indium selenide thin films of composition CuInSe2 with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10-5 mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe2 films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 106 cm-1 at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe2 thin films indicate its suitability in photovoltaic applications.

Anomalous electronic heat capacity of copper nanowires at sub-Kelvin temperatures

NASA Astrophysics Data System (ADS)

Viisanen, K. L.; Pekola, J. P.

2018-03-01

We have measured the electronic heat capacity of thin film nanowires of copper and silver at temperatures 0.1-0.3 K; the films were deposited by standard electron-beam evaporation. The specific heat of the Ag films of sub-100-nm thickness agrees with the bulk value and the free-electron estimate, whereas that of similar Cu films exceeds the corresponding reference values by one order of magnitude. The origin of the anomalously high heat capacity of copper films remains unknown for the moment. Based on the small heat capacity at low temperatures and the possibility to devise a tunnel probe thermometer on it, metal films form a promising absorber material, e.g., for microwave photon calorimetry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Ke; Wang, Xiaoyun; Liu, Jingjing

Highlights: • Cu/In bilayer was fabricated by BMSMW deposition technique. • High quality CIS film was successfully fabricated. • A preferable ratio of Cu:In:S close to 1:1:2 was approached. • The SPV response as high as 6 mV was achieved. - Abstract: High-quality CuInS{sub 2} (CIS) thin films have been fabricated by sulfurization of electrodeposited copper–indium bilayer. A novel bell-like wave modulated square wave (BWMSW) electrodeposition technique is employed for the deposition of copper thin film. Three independent parameters (current or potential, frequency, duty cycle) are available for the BWMSW electrodeposition, which is different from the traditional electrodeposition technique withmore » only one adjustable parameter (current or potential). The influences of deposition parameters such as frequency, duty cycle and the concentration of complexing agent are investigated. Benefited from the high quality copper film obtained by the BWMSW technique, the indium film is electrodeposited successfully on the copper layer to form a compact copper–indium alloy bilayer. After sulfurized at 600 °C for 60 min, the phase pure CIS film is obtained with better crystallinity. The structures, morphologies and optoelectronic properties of the CIS film are also characterized.« less

Cu incorporated amorphous diamond like carbon (DLC) composites: An efficient electron field emitter over a wide range of temperature

NASA Astrophysics Data System (ADS)

Ahmed, Sk Faruque; Alam, Md Shahbaz; Mukherjee, Nillohit

2018-03-01

The effect of temperature on the electron field emission properties of copper incorporated amorphous diamond like carbon (a-Cu:DLC) thin films have been reported. The a-Cu:DLC thin films have been deposited on indium tin oxide (ITO) coated glass and silicon substrate by the radio frequency sputtering process. The chemical composition of the films was investigated using X-ray photoelectron spectroscopy and the micro structure was established using high resolution transmission electron microscopy. The sp2 and sp3 bonding ratio in the a-Cu:DLC have been analyzed by the Fourier transformed infrared spectroscopy studies. The material showed excellent electron field emission properties; which was optimized by varying the copper atomic percentage and temperature of the films. It was found that the threshold field and effective emission barrier were reduced significantly by copper incorporation as well as temperature and a detailed explanation towards emission mechanism has been provided.

Influence of microstructure and surface topography on the electrical conductivity of Cu and Ag thin films obtained by magnetron sputtering

NASA Astrophysics Data System (ADS)

Polonyankin, D. A.; Blesman, A. I.; Postnikov, D. V.

2017-05-01

Conductive thin films formation by copper and silver magnetron sputtering is one of high technological areas for industrial production of solar energy converters, energy-saving coatings, flat panel displays and touch control panels because of their high electrical and optical properties. Surface roughness and porosity, average grain size, internal stresses, orientation and crystal lattice type, the crystallinity degree are the main physical properties of metal films affecting their electrical resistivity and conductivity. Depending on the film thickness, the dominant conduction mechanism can affect bulk conductivity due to the flow of electron gas, and grain boundary conductivity. The present investigation assesses the effect of microstructure and surface topography on the electrical conductivity of magnetron sputtered Cu and Ag thin films using X-ray diffraction analysis, scanning electron and laser interference microscopy. The highest specific conductivity (78.3 MS m-1 and 84.2 MS m-1, respectively, for copper and silver films at the thickness of 350 nm) were obtained with the minimum values of roughness and grain size as well as a high degree of lattice structuredness.

Charge carrier transport in polycrystalline organic thin film based field effect transistors

NASA Astrophysics Data System (ADS)

Rani, Varsha; Sharma, Akanksha; Ghosh, Subhasis

2016-05-01

The charge carrier transport mechanism in polycrystalline thin film based organic field effect transistors (OFETs) has been explained using two competing models, multiple trapping and releases (MTR) model and percolation model. It has been shown that MTR model is most suitable for explaining charge carrier transport in grainy polycrystalline organic thin films. The energetic distribution of traps determined independently using Mayer-Neldel rule (MNR) is in excellent agreement with the values obtained by MTR model for copper phthalocyanine and pentacene based OFETs.

Copper Oxide Nanograss for Efficient and Stable Photoelectrochemical Hydrogen Production by Water Splitting

NASA Astrophysics Data System (ADS)

Borkar, Rajnikant; Dahake, Rashmi; Rayalu, Sadhana; Bansiwal, Amit

2018-03-01

A biphasic copper oxide thin film of grass-like appendage morphology is synthesized by two-step electro-deposition method and later investigated for photoelectrochemical (PEC) water splitting for hydrogen production. Further, the thin film was characterized by UV-Visible spectroscopy, x-ray diffraction (XRD), Scanning electron microscopy (SEM) and PEC techniques. The XRD analysis confirms formation of biphasic copper oxide phases, and SEM reveals high surface area grass appendage-like morphology. These grass appendage structures exhibit a high cathodic photocurrent of - 1.44 mAcm-2 at an applied bias of - 0.7 (versus Ag/AgCl) resulting in incident to photon current efficiency (IPCE) of ˜ 10% at 400 nm. The improved light harvesting and charge transport properties of grass appendage structured biphasic copper oxides makes it a potential candidate for PEC water splitting for hydrogen production.

Electrochemical characterization of bulk and thin film copper in ammonia- and nitric acid-based slurries for chemical mechanical planarization of interconnects

NASA Astrophysics Data System (ADS)

Sainio, Carlyn Anne

Copper will be replacing aluminum as the interconnect material in silicon integrated circuits. Chemical mechanical planarization (CMP) in combination with an inlaid metal interconnection scheme has been utilized to pattern copper interconnects. The thesis describes an attempt to understand the electrochemistry of copper in slurries used for CMP. Steady-state electrochemical potential measurements, linear polarization resistance determinations, and potentiodynamic and potentiostatic polarization scans have been used in order to characterize the mechanism by which copper is removed during CMP. Electrochemical measurements were implemented on a rotating disk assembly to simulate conditions during CMP. Experiments were performed on both bulk copper samples and blanket copper thin films sputter deposited onto silicon wafers. Electrochemical potential measurements have been used in conjunction with potential-pH diagrams to determine the possible copper species which are stable during CMP. Electrochemical results were correlated to CMP experiments to determine slurry compositions with optimum potential-pH ranges for copper planarization. The results indicate that such studies present an opportunity to isolate the electrochemical and chemical effects from the mechanical effects in the CMP of metals and to determine the dependencies of each of these effects on the other. CMP of copper was controlled by the removal of native or non-native surface films. High CMP rates were achieved by matching the rates of film formation and copper and film dissolution. During CMP, surface films are abraded, allowing increased dissolution of copper until the surface film reforms. When the surface was indented by abrasive particles, the corrosion rate of the exposed copper increased by two orders of magnitude. Etchants (i.e. ammonia or nitric acid) were necessary for high CMP rates (120-240 nm/min) and to minimize scratching. CMP rates of copper in 1 volume percent NHsb4OH and 0.7 volume percent HNOsb3 with 0.0016 weight percent KMnOsb4 were comparable. Electrochemical characterization can narrow the possible slurry compositions that may be used for polishing. Also, the possibility of implementing electrochemical techniques to detect the endpoint of polishing was investigated. Although electrochemical measurements in ammonia-based slurries did not indicate when tantalum was exposed, similar measurements may be used to determine when polishing pads should be replaced.

Temperature and Microstructural Effects on the Superconducting Properties of Niobium Thin Films

DOE PAGES

Beebe, Melissa R.; Valente-Feliciano, Anne -Marie; Beringer, Douglas B.; ...

2016-11-23

Here, superconducting thin films have a wide range of dc and RF applications, from detectors to superconducting radio frequency. Amongst the most used materials, niobium (Nb) has the highest critical temperature (TC) and highest lower critical field (HC1) of the elemental superconductors and can be deposited on a variety of substrates, making Nb thin films very appealing for such applications. Here, we present temperature-dependent dc studies on the critical temperature and critical fields of Nb thin films grown on copper and r-plane sapphire surfaces. Additionally, we correlate the dc superconducting properties of these films with their microstructure, which allows formore » the possibility of tailoring future films for a specific application.« less

The state of the art of thin-film photovoltaics

NASA Astrophysics Data System (ADS)

Surek, T.

1993-10-01

Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

Extraordinary Corrosion Protection from Polymer-Clay Nanobrick Wall Thin Films.

PubMed

Schindelholz, Eric J; Spoerke, Erik D; Nguyen, Hai-Duy; Grunlan, Jaime C; Qin, Shuang; Bufford, Daniel C

2018-06-20

Metals across all industries demand anticorrosion surface treatments and drive a continual need for high-performing and low-cost coatings. Here we demonstrate polymer-clay nanocomposite thin films as a new class of transparent conformal barrier coatings for protection in corrosive atmospheres. Films assembled via layer-by-layer deposition, as thin as 90 nm, are shown to reduce copper corrosion rates by >1000× in an aggressive H 2 S atmosphere. These multilayer nanobrick wall coatings hold promise as high-performing anticorrosion treatment alternatives to costlier, more toxic, and less scalable thin films, such as graphene, hexavalent chromium, or atomic-layer-deposited metal oxides.

The effect of thin film morphology on the electrochemical performance of Cu-Sn anode for lithium rechargeable batteries.

PubMed

Polat, B D; Keleş, O

2014-05-01

We investigate the anode performance of non ordered and ordered nanostructured Cu-Sn thin films deposited via electron beam deposition technique. The ordered nanostructured Cu-Sn thin film having nano-porosities was fabricated using an oblique (co)deposition technique. Our results showed that the nano structured Cu-Sn thin film containing Cu-Sn nanorods had higher initial anodic capacity (790 mA h g(-)) than that of the non ordered thin film (330 mA h g(-)). But the capacity of the ordered nanostructured Cu-Sn thin film diminished after the first cycle and a steady state capacity value around 300 mA h g(-) is sustainable in following up to 80th cycle, which is attributed to the composition and morphology of the thin film. The presence of copper containing Sn nanorods leading to form nano-porosities as interstitial spaces among them, enhanced lithium ions movement within thin film and increased the thin film tolerance against the stress generated because of the drastic volume change occurred during lithiation-delithiation processes; hence, homogenously distributed porosities increased the cycle life of the thin film.

Microstructure control of Al-Cu films for improved electromigration resistance

DOEpatents

Frear, Darrel R.; Michael, Joseph R.; Romig, Jr., Alton D.

1994-01-01

A process for the forming of Al-Cu conductive thin films with reduced electromigration failures is useful, for example, in the metallization of integrated circuits. An improved formation process includes the heat treatment or annealing of the thin film conductor at a temperature within the range of from 200.degree. C. to 300.degree. C. for a time period between 10 minutes and 24 hours under a reducing atmosphere such as 15% H.sub.2 in N.sub.2 by volume. Al-Cu thin films annealed in the single phase region of a phase diagram, to temperatures between 200.degree. C. and 300.degree. C. have .theta.-phase Al.sub.2 Cu precipitates at the grain boundaries continuously become enriched in copper, due, it is theorized, to the formation of a thin coating of .theta.-phase precipitate at the grain boundary. Electromigration behavior of the aluminum is, thus, improved because the .theta.-phase precipitates with copper hinder aluminum diffusion along the grain boundaries. Electromigration, then, occurs mainly within the aluminum grains, a much slower process.

Thickness and surface roughness study of co-sputtered nanostructured alumina/tungsten (Al2O3/W) thin films

NASA Astrophysics Data System (ADS)

Naveen, A.; Krishnamurthy, L.; Shridhar, T. N.

2018-04-01

Tungsten (W) and Alumina (Al2O3) thin films have been developed using co-sputtering technique on SS304, Copper (Cu) and Glass slides using Direct Current magnetron sputtering (DC) and Radio Frequency (RF) magnetron sputtering methods respectively. Central Composite Design (CCD) method approach has been adopted to determine the number of experimental plans for deposition and DC power, RF power and Argon gas flow rate have been input parameters, each at 5 levels for development of thin films. In this research paper, study has been carried out determine the optimized condition of deposition parameters for thickness and surface roughness of the thin films. Thickness and average Surface roughness in terms of nanometer (nm) have been characterized by thickness profilometer and atomic force microscopy respectively. The maximum and minimum average thickness observed to be 445 nm and 130 respectively. The optimum deposition condition for W/Al2O3 thin film growth was determined to be at 1000 watts of DC power and 800 watts of RF power, 20 minutes of deposition time, and almost 300 Standard Cubic Centimeter(SCCM) of Argon gas flow. It was observed that average roughness difference found to be less than one nanometer on SS substrate and one nanometer on copper approximately.

Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haipeng Wang; Genfa Wu; H. Phillips

2005-05-16

A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system andmore » this system. Engineering work progress toward the first plasma creation will be reported here.« less

Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

NASA Astrophysics Data System (ADS)

Chen, G. S.; Chen, S. T.

2000-06-01

Tantalum-related thin films containing different amounts of nitrogen are sputter deposited at different argon-to-nitrogen flow rate ratios on (100) silicon substrates. Using x-ray diffractometry, transmission electron microscopy, composition and resistivity analyses, and bending-beam stress measurement technique, this work examines the impact of varying the nitrogen flow rate, particularly on the crystal structure, composition, resistivity, and residual intrinsic stress of the deposited Ta2N thin films. With an adequate amount of controlled, reactive nitrogen in the sputtering gas, thin films of the tantalum nitride of nominal formula Ta2N are predominantly amorphous and can exist over a range of nitrogen concentrations slightly deviated from stoichiometry. The single-layered quasi-amorphous Ta2N (a-Ta2N) thin films yield intrinsic compressive stresses in the range 3-5 GPa. In addition, the use of the 40-nm-thick a-Ta2N thin films with different nitrogen atomic concentrations (33% and 36%) and layering designs as diffusion barriers between silicon and copper are also evaluated. When subjected to high-temperature annealing, the single-layered a-Ta2N barrier layers degrade primarily by an amorphous-to-crystalline transition of the barrier layers. Crystallization of the single-layered stoichiometric a-Ta2N (Ta67N33) diffusion barriers occurs at temperatures as low as 450 °C. Doing so allows copper to preferentially penetrate through the grain boundaries or thermal-induced microcracks of the crystallized barriers and react with silicon, sequentially forming {111}-facetted pyramidal Cu3Si precipitates and TaSi2 Overdoping nitrogen into the amorphous matrix can dramatically increase the crystallization temperature to 600 °C. This temperature increase slows down the inward diffusion of copper and delays the formation of both silicides. The nitrogen overdoped Ta2N (Ta64N36) diffusion barriers can thus be significantly enhanced so as to yield a failure temperature 100 °C greater than that of the Ta67N33 diffusion barriers. Moreover, multilayered films, formed by alternately stacking the Ta67N33 and Ta64N36 layers with an optimized bilayer thickness (λ) of 10 nm, can dramatically reduce the intrinsic compressive stress to only 0.7 GPa and undergo high-temperature annealing without crystallization. Therefore, the Ta67N33/Ta64N36 multilayered films exhibit a much better barrier performance than the highly crystallization-resistant Ta64N36 single-layered films.

Copper cladding on polymer surfaces by ionization-assisted deposition

NASA Astrophysics Data System (ADS)

Kohno, Tomoki; Tanaka, Kuniaki; Usui, Hiroaki

2018-03-01

Copper thin films were prepared on poly(ethylene terephthalate) (PET) and polyimide (PI) substrates by an ionization-assisted vapor deposition method. The films had a polycrystalline structure, and their crystallite size decreased with increasing ion acceleration voltage V a. Ion acceleration was effective in reducing the surface roughness of the films. Cross-sectional transmission electron microscopy revealed that the copper/polymer interface showed increased corrugation with increasing V a. The increase in V a also induced the chemical modification of polymer chains of the PET substrate, but the PI substrate underwent smaller modification after ion bombardment. Most importantly, the adhesion strength between the copper film and the PET substrate increased with increasing V a. It was concluded that ionization-assisted deposition is a promising technique for preparing metal clad layers on flexible polymer substrates.

Influences of annealing temperature on sprayed CuFeO2 thin films

NASA Astrophysics Data System (ADS)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Surface plasmon resonance and nonlinear optical behavior of pulsed laser-deposited semitransparent nanostructured copper thin films

NASA Astrophysics Data System (ADS)

Kesarwani, Rahul; Khare, Alika

2018-06-01

In this paper, surface plasmon resonance (SPR) and nonlinear optical properties of semitransparent nanostructured copper thin films fabricated on the glass substrate at 400 °C by pulsed laser deposition technique are reported. The thickness, linear absorption coefficient and linear refractive index of the films were measured by spectroscopic ellipsometer. The average particle size as measured via atomic force microscope was in the range of 12.84-26.02 nm for the deposition time ranging from 5 to 10 min, respectively. X-ray diffraction spectra revealed the formation of Cu (111) and Cu (200) planes. All these thin films exhibited broad SPR peak. The third-order optical nonlinearity of all the samples was investigated via modified z-scan technique using cw laser at a wavelength of 632.8 nm. The open aperture z-scan spectra of Cu thin film deposited for 5 min duration exhibited reverse saturation absorption whereas all the other samples displayed saturation absorption behavior. The nonlinear refractive index coefficient of these films showed a positive sign having the magnitude of the order of 10- 4 cm/W. The real and imaginary parts of susceptibilities were also calculated from the z-scan data and found to be of the order of 10- 6 esu.

What is the copper thin film thickness effect on thermal properties of NiTi/Cu bi-layer?

NASA Astrophysics Data System (ADS)

Fazeli, Sara; Vahedpour, Morteza; Khatiboleslam Sadrnezhaad, Sayed

2017-02-01

Molecular dynamics (MD) simulation was used to study of thermal properties of NiTi/Cu. Embedded atom method (EAM) potentials for describing of inter-atomic interaction and Nose-Hoover thermostat and barostat are employed. The melting of the bi-layers was considered by studying the temperature dependence of the cohesive energy and mean square displacement. To highlight the differences between bi-layers with various copper layer thickness, the effect of copper film thickness on thermal properties containing the cohesive energy, melting point, isobaric heat capacity and latent heat of fusion was estimated. The results show that thermal properties of bi-layer systems are higher than that of their corresponding of pure NiTi. But, these properties of bi-layer systems approximately are independent of copper film thicknesses. The mean square displacement (MSD) results show that, the diffusion coefficients enhance upon increasing of copper film thickness in a linear performance.

Thin film photovoltaic cells having increased durability and operating life and method for making same

DOEpatents

Barnett, Allen M.; Masi, James V.; Hall, Robert B.

1980-12-16

A solar cell having a copper-bearing absorber is provided with a composite transparent encapsulating layer specifically designed to prevent oxidation of the copper sulfide. In a preferred embodiment, the absorber is a layer of copper sulfide and the composite layer comprises a thin layer of copper oxide formed on the copper sulfide and a layer of encapsulating glass formed on the oxide. It is anticipated that such devices, when exposed to normal operating conditions of various terrestrial applications, can be maintained at energy conversion efficiencies greater than one-half the original conversion efficiency for periods as long as thirty years.

The crystalline structure of copper phthalocyanine films on ZnO(1100).

PubMed

Cruickshank, Amy C; Dotzler, Christian J; Din, Salahud; Heutz, Sandrine; Toney, Michael F; Ryan, Mary P

2012-09-05

The structure of copper phthalocyanine (CuPc) thin films (5-100 nm) deposited on single-crystal ZnO(1100) substrates by organic molecular beam deposition was determined from grazing-incidence X-ray diffraction reciprocal space maps. The crystal structure was identified as the metastable polymorph α-CuPc, but the molecular stacking was found to vary depending on the film thickness: for thin films, a herringbone arrangement was observed, whereas for films thicker than 10 nm, coexistence of both the herringbone and brickstone arrangements was found. We propose a modified structure for the herringbone phase with a larger monoclinic β angle, which leads to intrastack Cu-Cu distances closer to those in the brickstone phase. This structural basis enables an understanding of the functional properties (e.g., light absorption and charge transport) of (opto)electronic devices fabricated from CuPc/ZnO hybrid systems.

Method of forming particulate materials for thin-film solar cells

DOEpatents

Eberspacher, Chris; Pauls, Karen Lea

2004-11-23

A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bourlier, Yoan; Cristini Robbe, Odile; Laboratoire de Physique des Lasers, Atomes et Molécules

Highlights: • CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin films were prepared by sol–gel process. • Evolution of lattice parameters is characteristic of a solid solution. • Optical band gap was found to be linearly dependent on the gallium rate. - Abstract: In this paper, we report the elaboration of Cu(In,Ga)S{sub 2} chalcopyrite thin films via a sol–gel process. To reach this aim, solutions containing copper, indium and gallium complexes were prepared. These solutions were thereafter spin-coated onto the soda lime glass substrates and calcined, leading to metallic oxides thin films. Expected chalcopyrite films were finally obtained by sulfurization of oxides layersmore » using a sulfur atmosphere at 500 °C. The rate of gallium incorporation was studied both at the solutions synthesis step and at the thin films sulfurization process. Elemental and X-ray diffraction (XRD) analyses have shown the efficiency of monoethanolamine used as a complexing agent for the preparation of CuIn{sub (1−x)}Ga{sub x}S{sub 2} thin layers. Moreover, the replacement of diethanolamine by monoethanolamine has permitted the substitution of indium by isovalent gallium from x = 0 to x = 0.4 and prevented the precipitation of copper derivatives. XRD analyses of sulfurized thin films CuIn{sub (1−x)}Ga{sub x}S{sub 2,} clearly indicated that the increasing rate of gallium induced a shift of XRD peaks, revealing an evolution of the lattice parameter in the chalcopyrite structure. These results were confirmed by Raman analyses. Moreover, the optical band gap was also found to be linearly dependent upon the gallium rate incorporated within the thin films: it varies from 1.47 eV for x = 0 to 1.63 eV for x = 0.4.« less

Ultra-high cooling rate utilizing thin film evaporation

NASA Astrophysics Data System (ADS)

Su, Fengmin; Ma, Hongbin; Han, Xu; Chen, Hsiu-hung; Tian, Bohan

2012-09-01

This research introduces a cell cryopreservation method, which utilizes thin film evaporation and provides an ultra-high cooling rate. The microstructured surface forming the thin film evaporation was fabricated from copper microparticles with an average diameter of 50 μm. Experimental results showed that a cooling rate of approximately 5×104 °C/min was achieved in a temperature range from 10 °C to -187 °C. The current investigation will give birth to a cell cryopreservation method through vitrification with relatively low concentrations of cryoprotectants.

Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

NASA Astrophysics Data System (ADS)

Loranca-Ramos, F. E.; Diliegros-Godines, C. J.; Silva González, R.; Pal, Mou

2018-01-01

Copper antimony sulfide (CAS) has been proposed as low toxicity and earth abundant absorber materials for thin film photovoltaics due to their suitable optical band gap, high absorption coefficient and p-type electrical conductivity. The present work reports the formation of copper antimony sulfide by chemical bath deposition using sodium citrate as a complexing agent. We show that by tuning the annealing condition, one can obtain either chalcostibite or tetrahedrite phase. However, the main challenge was co-deposition of copper and antimony as ternary sulfides from a single chemical bath due to the distinct chemical behavior of these metals. The as-deposited films were subjected to several trials of thermal treatment using different temperatures and time to find the optimized annealing condition. The films were characterized by different techniques including Raman spectroscopy, X-ray diffraction (XRD), profilometer, scanning electron microscopy (SEM), UV-vis spectrophotometer, and Hall Effect measurements. The results show that the formation of chalcostibite and tetrahedrite phases is highly sensitive to annealing conditions. The electrical properties obtained for the chalcostibite films varied as the annealing temperature increases from 280 to 350 °C: hole concentration (n) = 1017-1018 cm-3, resistivity (ρ) = 1.74-2.14 Ωcm and carrier mobility (μ) = 4.7-9.26 cm2/Vseg. While for the tetrahedrite films, the electrical properties were n = 5 × 1019 cm-3, μ = 18.24 cm2/Vseg, and ρ = 5.8 × 10-3 Ωcm. A possible mechanism for the formation of ternary copper antimony sulfide has also been proposed.

Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution.

PubMed

Zhang, Jing; Yang, Yingchao; Lou, Jun

2016-09-09

Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

Effect of copper and nickel doping on the optical and structural properties of ZnO

NASA Astrophysics Data System (ADS)

Muǧlu, G. Merhan; Sarıtaş, S.; ćakıcı, T.; Şakar, B.; Yıldırım, M.

2017-02-01

The present study is focused on the Cu doped ZnO and Ni doped ZnO dilute magnetic semiconductor thin films. ZnO:Cu and ZnO:Ni thin films were grown by Chemically Spray Pyrolysis (CSP) method on glass substrates. Optical analysis of the films was done spectral absorption and transmittance measurements by UV-Vis double beam spectrophotometer technique. The structure, morphology, topology and elemental analysis of ZnO:Cu and ZnO:Ni dilute magnetic thin films were investigated by X-ray diffraction (XRD), Raman Analysis, field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM) techniques, respectively. Also The magnetic properties of the ZnO:Ni thin film was investigated by vibrating sample magnetometer (VSM) method. VSM measurements of ZnO:Ni thin film showed that the ferromagnetic behavior.

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

NASA Astrophysics Data System (ADS)

Chang, R. C.; Li, T. C.; Lin, C. W.

2012-02-01

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

Structural and optical properties of CuS thin films deposited by Thermal co-evaporation

NASA Astrophysics Data System (ADS)

Sahoo, A. K.; Mohanta, P.; Bhattacharyya, A. S.

2015-02-01

Copper sulfide (CuS) thin films with thickness 100, 150 and 200 nm have been deposited on glass substrates by thermal co-evaporation of Copper and Sulphur. The effect of CuS film thickness on the structural and optical properties have investigated and discussed. Structural and optical investigations of the films were carried out by X-ray diffraction, atomic force microscopy, high-resolution transmission electron microscopy and UV spectroscopy. XRD and selected area electron diffraction conforms that polycrystalline in nature with hexagonal crystal structure. AFM studies revealed a smooth surface morphology with root mean-square roughness values increases from 24 nm to 42 nm as the film thickness increase from 100 nm to 200 nm. AFM image showed that grain size increases with thickness of film increases and good agreement with the calculated from full width half maximum of the X-ray diffraction peak using Scherrer's formula and Williamson-Hall plot. The absorbance of the thin films were absorbed decreases with wavelength through UV-visible regions but showed a increasing in the near-infrared regions. The reflectance spectra also showed lower reflectance peak (25% to 32%) in visible region and high reflectance peak (49 % to 54 %) in near-infrared region. These high absorbance films made them for photo-thermal conversion of solar energy.

Transferable and flexible thin film devices for engineering applications

NASA Astrophysics Data System (ADS)

Mutyala, Madhu Santosh K.; Zhou, Jingzhou; Li, Xiaochun

2014-05-01

Thin film devices can be of significance for manufacturing, energy conversion systems, solid state electronics, wireless applications, etc. However, these thin film sensors/devices are normally fabricated on rigid silicon substrates, thus neither flexible nor transferrable for engineering applications. This paper reports an innovative approach to transfer polyimide (PI) embedded thin film devices, which were fabricated on glass, to thin metal foils. Thin film thermocouples (TFTCs) were fabricated on a thin PI film, which was spin coated and cured on a glass substrate. Another layer of PI film was then spin coated again on TFTC/PI and cured to obtain the embedded TFTCs. Assisted by oxygen plasma surface coarsening of the PI film on the glass substrate, the PI embedded TFTC was successfully transferred from the glass substrate to a flexible copper foil. To demonstrate the functionality of the flexible embedded thin film sensors, they were transferred to the sonotrode tip of an ultrasonic metal welding machine for in situ process monitoring. The dynamic temperatures near the sonotrode tip were effectively measured under various ultrasonic vibration amplitudes. This technique of transferring polymer embedded electronic devices onto metal foils yield great potentials for numerous engineering applications.

Superior Sensitivity of Copper-Based Plasmonic Biosensors.

PubMed

Stebunov, Yury V; Yakubovsky, Dmitry I; Fedyanin, Dmitry Yu; Arsenin, Aleksey V; Volkov, Valentyn S

2018-04-17

Plasmonic biosensing has been demonstrated to be a powerful technique for quantitative determination of molecular analytes and kinetic analysis of biochemical reactions. However, interfaces of most plasmonic biosensors are made of noble metals, such as gold and silver, which are not compatible with industrial production technologies. This greatly limits biosensing applications beyond biochemical and pharmaceutical research. Here, we propose and investigate copper-based biosensor chips fully fabricated with a standard complementary metal-oxide-semiconductor (CMOS) process. The protection of thin copper films from oxidation is achieved with SiO 2 and Al 2 O 3 dielectric films deposited onto the metal surface. In addition, the deposition of dielectric films with thicknesses of only several tens of nanometers significantly improves the biosensing sensitivity, owing to better localization of electromagnetic field above the biosensing surface. According to surface plasmon resonance (SPR) measurements, the copper biosensor chips coated with thin films of SiO 2 (25 nm) and Al 2 O 3 (15 nm) show 55% and 75% higher sensitivity to refractive index changes, respectively, in comparison to pure gold sensor chips. To test biomolecule immobilization, the copper-dielectric biosensor chips are coated with graphene oxide linking layers and used for the selective analysis of oligonucleotide hybridization. The proposed plasmonic biosensors make SPR technology more affordable for various applications and provide the basis for compact biosensors integrated with modern electronic devices.

Investigation for surface resistance of yttrium-barium-copper-oxide thin films on various substrates for microwave applications

NASA Astrophysics Data System (ADS)

Yao, Hongjun

High temperature superconducting (HTS) materials such as YBCO (Yttrium-Barium-Copper-Oxide) are very attractive in microwave applications because of their extremely low surface resistance. In the proposed all-HTS tunable filter, a layer of HTS thin film on a very thin substrate (100 mum) is needed to act as the toractor that can be rotated to tune the frequency. In order to provide more substrate candidates that meet both electrical and mechanical requirements for this special application, surface resistance of YBCO thin films on various substrates was measured using microstrip ring resonator method. For alumina polycrystalline substrate, a layer of YSZ (Yttrium stabilized Zirconia) was deposited using IBAD (ion beam assisted deposition) method prior to YBCO deposition. The surface resistance of the YBCO thin film on alumina was found to be 22 mO due to high-angle grain boundary problem caused by the mixed in-plane orientations and large FWHM (full width at half maximum) of the thin film. For YBCO thin films on a YSZ single crystal substrate, the surface resistance showed even higher value of 30 mO because of the mixed in-plane orientation problem. However, by annealing the substrate in 200 Torr oxygen at 730°C prior to deposition, the in-plane orientation of YBCO thin films can be greatly improved. Therefore, the surface resistance decreased to 1.4 mO, which is still more than an order higher than the reported best value. The YBCO thin films grown on LaAlO3 single crystal substrate showed perfect in-plane orientation with FWHM less 1°. The surface resistance was as low as 0.032 mO. A tunable spiral resonator made of YBCO thin film on LaAlO3 single crystal substrate demonstrated that the resonant frequency can be tuned in a rang as large as 500 MHz by changing the gap between toractor and substrate. The Q-factor was more than 12,000, which ensured the extraordinarily high sensitivity for the proposed all-HTS tunable filter.

Deposition of ultra thin CuInS₂ absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C).

PubMed

Schneider, Nathanaelle; Bouttemy, Muriel; Genevée, Pascal; Lincot, Daniel; Donsanti, Frédérique

2015-02-06

Two new processes for the atomic layer deposition of copper indium sulfide (CuInS₂) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl₃) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS₂ stoechiometry was only achieved by depositing In₂S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)₂, In(acac)₃) allows the direct deposition of CuInS₂ at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.

Competing Liquid Phase Instabilities during Pulsed Laser Induced Self-Assembly of Copper Rings into Ordered Nanoparticle Arrays on SiO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Fowlkes, J. D.; Roberts, N. A.

Nanoscale copper rings of different radii, thicknesses, and widths were synthesized on silicon dioxide thin films and were subsequently liquefied via a nanosecond pulse laser treatment. During the nanoscale liquid lifetimes, the rings experience competing retraction dynamics and thin film and/or Rayleigh-Plateau types of instabilities, which lead to arrays of ordered nanodroplets. Surprisingly, the results are significantly different from those of similar experiments carried out on a Si surface.(1) We use hydrodynamic simulations to elucidate how the different liquid/solid interactions control the different instability mechanisms in the present problem.

Copper phthalocyanine films deposited by liquid-liquid interface recrystallization technique (LLIRCT).

PubMed

Patil, K R; Sathaye, S D; Hawaldar, R; Sathe, B R; Mandale, A B; Mitra, A

2007-11-15

The simple recrystallization process is innovatively used to obtain the nanoparticles of copper phthalocyanine by a simple method. Liquid-liquid interface recrystallization technique (LLIRCT) has been employed successfully to produce small sized copper phthalocyanine nanoparticles with diameter between 3-5 nm. The TEM-SAED studies revealed the formation of 3-5 nm sized with beta-phase dominated mixture of alpha and beta copper phthalocyanine nanoparticles. The XRD, SEM, and the UV-vis studies were further carried out to confirm the formation of copper phthalocyanine thin films. The cyclic voltametry (CV) studies conclude that redox reaction is totally reversible one electron transfer process. The process is attributed to Cu(II)/Cu(I) redox reaction.

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

Internal structure of copper(II)-phthalocyanine thin films on SiO2/Si substrates investigated by grazing incidence x-ray reflectometry

NASA Astrophysics Data System (ADS)

Brieva, A. C.; Jenkins, T. E.; Jones, D. G.; Strössner, F.; Evans, D. A.; Clark, G. F.

2006-04-01

The internal structure of copper(II)-phthalocyanine (CuPc) thin films grown on SiO2/Si by organic molecular beam deposition has been studied by grazing incidence x-ray reflectometry (GIXR) and atomic force microscopy. The electronic density profile is consistent with a structure formed by successive monolayers of molecules in the α form with the b axis lying in the substrate surface plane. The authors present an electronic density profile model of CuPc films grown on SiO2/Si. The excellent agreement between the model and experimental data allows postdeposition monitoring of the internal structure of the CuPc films with the nondestructive GIXR technique, providing a tool for accurate control of CuPc growth on silicon-based substrates. In addition, since the experiments have been carried out ex situ, they show that these structures can endure ambient conditions.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Characterization of defects in copper antimony disulfide

DOE PAGES

Willian de Souza Lucas, Francisco; Peng, Haowei; Johnston, Steve; ...

2017-09-19

Copper antimony disulfide (CuSbS 2) has several excellent bulk optoelectronic properties for photovoltaic absorber applications. Here, we report on the defect properties in CuSbS 2thin film materials and photovoltaic devices studied using several experimental methods supported by theoretical calculations.

Growth and characterization of chalcostibite CuSbSe2 thin films for photovoltaic application

NASA Astrophysics Data System (ADS)

Tiwari, Kunal J.; Vinod, Vijay; Subrahmanyam, A.; Malar, P.

2017-10-01

Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (Ib ∼30, 40 and 50 mA) and at a substrate temperature of 200 °C. Near stoichiometric CuSbSe2 thin films were obtained for Ib values closer to 50 mA and post annealing at a temperature of 380 °C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (α) values of >105 cm-1 and a band gap value ∼1.18 eV that is closer to the reported band gap for CuSbSe2 compound.

Electrodeposition Process and Performance of CuIn(Se x S1- x )2 Film for Absorption Layer of Thin-Film Solar Cells

NASA Astrophysics Data System (ADS)

Li, Libo; Yang, Xueying; Gao, Guanxiong; Wang, Wentao; You, Jun

2017-11-01

CuIn(Se x S1- x )2 thin film is prepared by the electrodeposition method for the absorption layer of the solar cell. The CuIn(Se x S1- x )2 films are characterized by cyclic voltammetry measurement for the reduction of copper, indium, selenium and sulfur in selenium and sulfur in aqueous solutions with sodium citrate and without sodium citrate. In the four cases, the defined reduction process for every single element is obtained and it is observed that sodium citrate changes the reduction potentials. A linear relationship between the current density of the reduction peak and (scan rate v)1/2 for copper and indium is achieved, indicating that the process is diffusion controlled. The diffusion coefficients of copper and indium ions are calculated. The diffusional coefficient D value of copper is higher than that of indium, and this is the reason why the deposition rate of copper is higher. When four elements are co-deposited in the aqueous solution with sodium citrate, the quaternary compound of CuIn(Se x S1- x )2 is deposited together with Cu3Se2 impure phases after annealing, as found by XRD spectra. Morphology is observed by SEM and AFM. The chemical state of the films components is analyzed by XPS. The UV-Visible spectrophotometer and electrochemistry workstation are employed to measure the photoelectric properties. The results show that the smooth, uniform and compact CuIn(Se x S1- x )2 film is a semiconductor with a band gap of 1.49 eV and a photovoltaic conversion efficiency of 0.45%.

Determination of structural, mechanical and corrosion properties of Nb2O5 and (NbyCu 1-y)Ox thin films deposited on Ti6Al4V alloy substrates for dental implant applications.

PubMed

Mazur, M; Kalisz, M; Wojcieszak, D; Grobelny, M; Mazur, P; Kaczmarek, D; Domaradzki, J

2015-02-01

In this paper comparative studies on the structural, mechanical and corrosion properties of Nb2O5/Ti and (NbyCu1-y)Ox/Ti alloy systems have been investigated. Pure layers of niobia and niobia with a copper addition were deposited on a Ti6Al4V titanium alloy surface using the magnetron sputtering method. The physicochemical properties of the prepared thin films were examined with the aid of XRD, XPS SEM and AFM measurements. The mechanical properties (i.e., nanohardness, Young's modulus and abrasion resistance) were performed using nanoindentation and a steel wool test. The corrosion properties of the coatings were determined by analysis of the voltammetric curves. The deposited coatings were crack free, exhibited good adherence to the substrate, no discontinuity of the thin film was observed and the surface morphology was homogeneous. The hardness of pure niobium pentoxide was ca. 8.64GPa. The obtained results showed that the addition of copper into pure niobia resulted in the preparation of a layer with a lower hardness of ca. 7.79 GPa (for niobia with 17 at.% Cu) and 7.75 GPa (for niobia with 25 at.% Cu). The corrosion properties of the tested thin films deposited on the surface of titanium alloy depended on the composition of the thin layer. The addition of copper (i.e. a noble metal) to Nb2O5 film increased the corrosion resistance followed by a significant decrease in the value of corrosion currents and, in case of the highest Cu content, the shift of corrosion potential towards the noble direction. The best corrosion properties were obtained from a sample of Ti6Al4V coated with (Nb0.75Cu0.25)Ox thin film. It seems that the tested materials could be used in the future as protection coatings for Ti alloys in biomedical applications such as implants. Copyright © 2014. Published by Elsevier B.V.

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Analyte chemisorption and sensing on n- and p-channel copper phthalocyanine thin-film transistors.

PubMed

Yang, Richard D; Park, Jeongwon; Colesniuc, Corneliu N; Schuller, Ivan K; Royer, James E; Trogler, William C; Kummel, Andrew C

2009-04-28

Chemical sensing properties of phthalocyanine thin-film transistors have been investigated using nearly identical n- and p-channel devices. P-type copper phthalocyanine (CuPc) has been modified with fluorine groups to convert the charge carriers from holes to electrons. The sensor responses to the tight binding analyte dimethyl methylphosphonate (DMMP) and weak binding analyte methanol (MeOH) were compared in air and N(2). The results suggest that the sensor response involves counterdoping of pre-adsorbed oxygen (O(2)). A linear dependence of chemical response to DMMP concentration was observed in both n- and p- type devices. For DMMP, there is a factor of 2.5 difference in the chemical sensitivity between n- and p-channel CuPc thin-film transistors, even though it has similar binding strength to n- and p-type CuPc molecules as indicated by the desorption times. The effect is attributed to the difference in the analyte perturbation of electron and hole trap energies in n- and p-type materials.

Functionalized copper(II)-phthalocyanine in solution and as thin film: photochemical and morphological characterization toward applications.

PubMed

Ingrosso, Chiara; Curri, M Lucia; Fini, Paola; Giancane, Gabriele; Agostiano, Angela; Valli, Ludovico

2009-09-01

This article reports on an extensive investigation on a functionalized phthalocyanine, namely, copper(II) tetrakis-(isopropoxy-carbonyl)-phthalocyanine (TIPCuPc). The self-association of the molecules is extensively described in solution in different solvents (DMSO, DMF, CHCl(3), pyridine) by means of UV-vis steady state spectroscopy at the air/water interface by Brewster angle microscopy (BAM) and in thin films by using atomic force microscopy (AFM). We investigated the morphology of TIPCuPc as thin film by evaluating different factors: temperature, solvent, concentration, transferring procedure (spin-coating and Langmuir-Schafer technique), and nature of the substrate (mica and quartz). The behavior of the molecules under UV light irradiation and their thermal stability were studied as well. Such a detailed study can allow a suitable processing of this phthalocyanine derivative for future applications. Here the photoelectrochemical activity of the phthalocyanine was investigated when suitably combined as sensitizer with rodlike TiO(2) nanocrystals (NCs) in hybrid junctions integrated in a photoelectrochemical cell.

Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

NASA Astrophysics Data System (ADS)

Aamir Hassan, Muhammad; Mujahid, Mohammad; Woei, Leow Shin; Wong, Lydia Helena

2018-03-01

Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

In situ oxidation studies on /001/ copper-nickel alloy thin films

NASA Technical Reports Server (NTRS)

Heinemann, K.; Rao, D. B.; Douglass, D. L.

1977-01-01

High-resolution transmission electron microscopy studies are reported of (001)-oriented single crystalline thin films of Cu-3%Ni, Cu-4.6%Ni, and Cu-50%Ni alloy which were prepared by vapor deposition onto (001) NaCl substrates and subsequently annealed at around 1100 K and oxidized at 725 K at low oxygen partial pressure. At all alloy concentrations, Cu2O and NiO nucleated and grew independently without the formation of mixed oxides. The shape and growth rates of Cu2O nuclei were similar to rates found earlier. For low-nickel alloy concentrations, the NiO nuclei were larger and the number density of NiO was less than that of Cu-50%Ni films for which the shape and growth rates of NiO were identical to those for pure nickel films. Phenomena involving a reduced induction period, surface precipitation, and through-thickness growth are also described. The results are consistent with previously established oxidation mechanisms for pure copper and pure nickel films.

Ductile film delamination from compliant substrates using hard overlayers

PubMed Central

Cordill, M.J.; Marx, V.M.; Kirchlechner, C.

2014-01-01

Flexible electronic devices call for copper and gold metal films to adhere well to polymer substrates. Measuring the interfacial adhesion of these material systems is often challenging, requiring the formulation of different techniques and models. Presented here is a strategy to induce well defined areas of delamination to measure the adhesion of copper films on polyimide substrates. The technique utilizes a stressed overlayer and tensile straining to cause buckle formation. The described method allows one to examine the effects of thin adhesion layers used to improve the adhesion of flexible systems. PMID:25641995

Ductile film delamination from compliant substrates using hard overlayers.

PubMed

Cordill, M J; Marx, V M; Kirchlechner, C

2014-11-28

Flexible electronic devices call for copper and gold metal films to adhere well to polymer substrates. Measuring the interfacial adhesion of these material systems is often challenging, requiring the formulation of different techniques and models. Presented here is a strategy to induce well defined areas of delamination to measure the adhesion of copper films on polyimide substrates. The technique utilizes a stressed overlayer and tensile straining to cause buckle formation. The described method allows one to examine the effects of thin adhesion layers used to improve the adhesion of flexible systems.

Liquid precursor for deposition of copper selenide and method of preparing the same

DOEpatents

Curtis, Calvin J.; Miedaner, Alexander; Franciscus Antonius Maria Van Hest, Marinus; Ginley, David S.; Hersh, Peter A.; Eldada, Louay; Stanbery, Billy J.

2015-09-08

Liquid precursors containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semiconductor applications are disclosed. Methods of preparing such liquid precursors and methods of depositing a precursor on a substrate are also disclosed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sabah, Fayroz A., E-mail: fayroz-arif@yahoo.com; Department of Electrical Engineering, College of Engineering, Al-Mustansiriya University, Baghdad; Ahmed, Naser M., E-mail: naser@usm.my

The copper sulphide (CuS) thin films were grown with good adhesion by spray pyrolysis deposition (SPD) on Ti, ITO and glass substrates at 200 °C. The distance between nozzle and substrate is 30 cm. The composition was prepared by mixing copper chloride CuCl{sub 2}.2H{sub 2}O as a source of Cu{sup 2+} and sodium thiosulfate Na{sub 2}S{sub 2}O{sub 3}.5H{sub 2}O as a source of and S{sup 2−}. Two concentrations (0.2 and 0.4 M) were used for each CuCl{sub 2} and Na{sub 2}S{sub 2}O{sub 3} to be prepared and then sprayed (20 ml). The process was started by spraying the solution formore » 3 seconds and after 10 seconds the cycle was repeated until the solution was sprayed completely on the hot substrates. The structural characteristics were studied using X-ray diffraction; they showed covellite CuS hexagonal crystal structure for 0.2 M concentration, and covellite CuS hexagonal crystal structure with two small peaks of chalcocite Cu{sub 2}S hexagonal crystal structure for 0.4 M concentration. Also the surface and electrical characteristics were investigated using Field Emission Scanning Electron Microscopy (FESEM) and current source device, respectively. The surface study for the CuS thin films showed nanorods to be established for 0.2 M concentration and mix of nanorods and nanoplates for 0.4 M concentration. The electrical study showed ohmic behavior and low resistivity for these films. Hall Effect was measured for these thin films, it showed that all samples of CuS are p- type thin films and ensured that the resistivity for thin films of 0.2 M concentration was lower than that of 0.4 M concentration; and for the two concentrations CuS thin film deposited on ITO had the lowest resistivity. This leads to the result that the conductivity was high for CuS thin film deposited on ITO substrate, and the conductivity of the three thin films of 0.2 M concentration was higher than that of 0.4 M concentration.« less

Performance enhanced miniaturized and electrically tunable patch antenna with patterned permalloy based magneto-dielectric substrate

NASA Astrophysics Data System (ADS)

Peng, Yujia; Farid Rahman, B. M.; Wang, Xuehe; Wang, Guoan

2014-05-01

Perspective magneto-dielectric materials with high permeability are potential substrates to miniaturize the patch antenna without deteriorating its performance. Besides its high permeability at high frequency, patterned Permalloy (Py) also presents tunable permeability by applying DC current. A performance enhanced miniaturized and electrically tunable patch antenna with patterned Py thin film is first presented and developed in this paper. To suppress the magnetic loss, the Py thin film layer is consisted of an array of 2 μm × 2 μm square Py patterns between the copper patch antenna and dielectric substrate. The DC current could be applied directly on Py patterns through the copper strip lines beneath the Py patterns along the length of patch antenna. The copper strip lines are specially designed with the same width of Py patterns and the thickness much less than the skin depth at the operating frequency, which can reduce their deteriorating effects to the performance of antenna. The structure of the antenna is presented and simulated with high frequency structure simulator. The results show that compared with non-magnetic antenna, the performance of Py thin film based antenna is improved with 50% bandwidth increase from 4 MHz to 8 MHz and 1.2 dB gain enhancement from 1.16 dB to 2.36 dB. The resonant frequency of the antenna could be continuously tuned from 937 MHz to 911 MHz with the permeability of Py thin film changing from 1750 to 1 900 by applying the DC current.

Electrodeposition of gold particles on aluminum substrates containing copper.

PubMed

Olson, Tim S; Atanassov, Plamen; Brevnov, Dmitri A

2005-01-27

Electrodeposition of adhesive metal films on aluminum is traditionally preceded by the zincate process, which activates the aluminum surface. This paper presents an alternative approach for activation of aluminum by using films containing 99.5% aluminum and 0.5% copper. Aluminum/copper films are made amenable for subsequent electrodeposition by anodization followed by chemical etching of aluminum oxide. The electrodeposition of gold is monitored with electrochemical impedance spectroscopy (EIS). Analysis of EIS data suggests that electrodeposition of gold increases the interfacial capacitance from values typical for electrodes with thin oxide layers to values typical for metal electrodes. Scanning electron microscopy examination of aluminum/copper films following gold electrodeposition shows the presence of gold particles with densities of 10(5)-10(7) particles cm(-2). The relative standard deviation of mean particle diameters is approximately 25%. Evaluation of the micrographs suggests that the electrodeposition occurs by instantaneous nucleation followed by growth of three-dimensional semispherical particles. The gold particles, which are electrically connected to the conductive aluminum/copper film, support a reversible faradaic process for a soluble redox couple. The deposited gold particles are suitable for subsequent metallization of aluminum and fabrication of particle-type films with interesting catalytic, electrical, and optical properties.

Self-assembled three-dimensional and compressible interdigitated thin-film supercapacitors and batteries

PubMed Central

Nyström, Gustav; Marais, Andrew; Karabulut, Erdem; Wågberg, Lars; Cui, Yi; Hamedi, Mahiar M.

2015-01-01

Traditional thin-film energy-storage devices consist of stacked layers of active films on two-dimensional substrates and do not exploit the third dimension. Fully three-dimensional thin-film devices would allow energy storage in bulk materials with arbitrary form factors and with mechanical properties unique to bulk materials such as compressibility. Here we show three-dimensional energy-storage devices based on layer-by-layer self-assembly of interdigitated thin films on the surface of an open-cell aerogel substrate. We demonstrate a reversibly compressible three-dimensional supercapacitor with carbon nanotube electrodes and a three-dimensional hybrid battery with a copper hexacyanoferrate ion intercalating cathode and a carbon nanotube anode. The three-dimensional supercapacitor shows stable operation over 400 cycles with a capacitance of 25 F g−1 and is fully functional even at compressions up to 75%. Our results demonstrate that layer-by-layer self-assembly inside aerogels is a rapid, precise and scalable route for building high-surface-area 3D thin-film devices. PMID:26021485

Dielectric response of branched copper phthalocyanine

NASA Astrophysics Data System (ADS)

Hamam, Khalil J.; Al-Amar, Mohammad M.; Mezei, Gellert; Guda, Ramakrishna; Burns, Clement A.

2017-09-01

The dielectric constant of pressed pellets and thin films of branched copper phthalocyanine (CuPc) was investigated as a function of frequency from 0.1 kHz to 1 MHz and temperature from 20 °C to 100 °C. Surface morphology was studied using a scanning electron microscope. The high-frequency values of the dielectric constant of pellets and thin films are ~3.5 and ~5.8, respectively. The response was only weakly dependent on frequency and temperature. The branched structure of the CuPc molecules helped to cancel out the effects of low-frequency polarization mechanisms. A planar delocalized charge system with two-dimensional localization was found using time-resolved photoluminescence measurements.

Lead zirconate titanate thin films directly on copper electrodes for ferroelectric, dielectric and piezoelectric applications

NASA Astrophysics Data System (ADS)

Kingon, Angus I.; Srinivasan, Sudarsan

2005-03-01

Replacement of noble metal electrodes by base metals significantly lowers the cost of ferroelectric, piezoelectric and dielectric devices. Here, we demonstrate that it is possible to process lead zirconate (Pb(Zr0.52Ti0.48)O3, or PZT) thin films directly on base metal copper foils. We explore the impact of the oxygen partial pressure during processing, and demonstrate that high-quality films and interfaces can be achieved through control of the oxygen partial pressure within a narrow window predicted by thermodynamic stability considerations. This demonstration has broad implications, opening up the possibility of the use of low-cost, high-conductivity copper electrodes for a range of Pb-based perovskite materials, including PZT films in embedded printed circuit board applications for capacitors, varactors and sensors; multilayer PZT piezoelectric stacks; and multilayer dielectric and electrostrictive devices based on lead magnesium niobate-lead titanate. We also point out that the capacitors do not fatigue on repeated switching, unlike those with Pt noble metal electrodes. Instead, they appear to be fatigue-resistant, like capacitors with oxide electrodes. This may have implications for ferroelectric non-volatile memories.

n-Type Conductivity of Cu2O Thin Film Prepared in Basic Aqueous Solution Under Hydrothermal Conditions

NASA Astrophysics Data System (ADS)

Ursu, Daniel; Miclau, Nicolae; Miclau, Marinela

2018-03-01

We report for the first time in situ hydrothermal synthesis of n-type Cu2O thin film using strong alkaline solution. The use of copper foil as substrate and precursor material, low synthesis temperature and short reaction time represent the arguments of a new, simple, inexpensive and high field synthesis method for the preparation of n-type Cu2O thin film. The donor concentration of n-type Cu2O thin film obtained at 2 h of reaction time has increased two orders of magnitude than previous reported values. We have demonstrated n-type conduction in Cu2O thin film prepared in strong alkaline solution, in the contradiction with the previous works. Based on experimental results, the synthesis mechanism and the origin of n-type photo-responsive behavior of Cu2O thin film were discussed. We have proposed that the unexpected n-type character could be explained by H doping of Cu2O thin film in during of the hydrothermal synthesis that caused the p-to-n conductivity-type conversion. Also, this work raises new questions about the origin of n-type conduction in Cu2O thin film, the influence of the synthesis method on the nature of the intrinsic defects and the electrical conduction behavior.

Characterization of Thin Film Dissolution in Water with in Situ Monitoring of Film Thickness Using Reflectometry.

PubMed

Yersak, Alexander S; Lewis, Ryan J; Tran, Jenny; Lee, Yung C

2016-07-13

Reflectometry was implemented as an in situ thickness measurement technique for rapid characterization of the dissolution dynamics of thin film protective barriers in elevated water temperatures above 100 °C. Using this technique, multiple types of coatings were simultaneously evaluated in days rather than years. This technique enabled the uninterrupted characterization of dissolution rates for different coating deposition temperatures, postdeposition annealing conditions, and locations on the coating surfaces. Atomic layer deposition (ALD) SiO2 and wet thermally grown SiO2 (wtg-SiO2) thin films were demonstrated to be dissolution-predictable barriers for the protection of metals such as copper. A ∼49% reduction in dissolution rate was achieved for ALD SiO2 films by increasing the deposition temperatures from 150 to 300 °C. ALD SiO2 deposited at 300 °C and followed by annealing in an inert N2 environment at 1065 °C resulted in a further ∼51% reduction in dissolution rate compared with the nonannealed sample. ALD SiO2 dissolution rates were thus lowered to values of wtg-SiO2 in water by the combination of increasing the deposition temperature and postdeposition annealing. Thin metal films, such as copper, without a SiO2 barrier corroded at an expected ∼1-2 nm/day rate when immersed in room temperature water. This measurement technique can be applied to any optically transparent coating.

Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

NASA Astrophysics Data System (ADS)

Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

2016-11-01

In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

Photoexcited Carrier Dynamics of Cu 2S Thin Films

DOE PAGES

Riha, Shannon C.; Schaller, Richard D.; Gosztola, David J.; ...

2014-11-11

Copper sulfide is a simple binary material with promising attributes for low-cost thin film photovoltaics. However, stable Cu 2S-based device efficiencies approaching 10% free from cadmium have yet to be realized. In this paper, transient absorption spectroscopy is used to investigate the dynamics of the photoexcited state of isolated Cu 2S thin films prepared by atomic layer deposition or vapor-based cation exchange of ZnS. While a number of variables including film thickness, carrier concentration, surface oxidation, and grain boundary passivation were examined, grain structure alone was found to correlate with longer lifetimes. A map of excited state dynamics is deducedmore » from the spectral evolution from 300 fs to 300 μs. Finally, revealing the effects of grain morphology on the photophysical properties of Cu 2S is a crucial step toward reaching high efficiencies in operationally stable Cu 2S thin film photovoltaics.« less

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com; Panchal, A.K.

2016-05-06

First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the ordermore » of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.« less

Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

NASA Technical Reports Server (NTRS)

Heinemann, K.; Rao, D. B.; Douglass, D. L.

1975-01-01

Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Aerosol-assisted chemical vapor deposition of ultra-thin CuOx films as hole transport material for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Zhixin; Chen, Shuqun; Li, Pingping; Li, Hongyi; Wu, Junshu; Hu, Peng; Wang, Jinshu

This paper reports on the fabrication of CuOx films to be used as hole transporting layer (HTL) in CH3NH3PbI3 perovskite solar cells (PSCs). Ultra-thin CuOx coatings were grown onto FTO substrates for the first time via aerosol-assisted chemical vapor deposition (AACVD) of copper acetylacetonate in methanol. After incorporating into the PSCs prepared at ambient air, a highest power conversion efficiency (PCE) of 8.26% with HTL and of 3.34% without HTL were achieved. Our work represents an important step in the development of low-cost CVD technique for fabricating ultra-thin metal oxide functional layers in thin film photovoltaics.

Status of CdS/CdTe solar cell research at NREL

NASA Astrophysics Data System (ADS)

Ramanathan, K.; Dhere, R. G.; Coutts, T. J.; Chu, T.; Chu, S.

1992-12-01

We report on the deposition of thin cadmium sulfide (CdS) layers from aqueous solutions and their optical properties. CdS layers have been deposited on soda lime glass, tin oxide coated glass and copper indium diselenide (CuInSe2) thin films. A systematic increase in the absorption is found to occur with increasing concentration of the buffer salt used in the bath. CdS/CdTe thin film solar cells have been fabricated by close spaced sublimation of CdTe, yielding 11.3% devices.

Charge carrier transport and collection enhancement of copper indium diselenide photoactive nanoparticle-ink by laser crystallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nian, Qiong; Cheng, Gary J., E-mail: gjcheng@purdue.edu; School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906

2014-09-15

There has been increasing needs for cost-effective and high performance thin film deposition techniques for photovoltaics. Among all deposition techniques, roll-to-roll printing of nanomaterials has been a promising method. However, the printed thin film contains many internal imperfections, which reduce the charge-collection performance. Here, direct pulse laser crystallization (DPLC) of photoactive nanoparticles-inks is studied to meet this challenge. In this study, copper indium selenite (CIS) nanoparticle-inks is applied as an example. Enhanced crystallinity, densified structure in the thin film is resulted after DLPC under optimal conditions. It is found that the decreased film internal imperfections after DPLC results in reducingmore » scattering and multi-trapping effects. Both of them contribute to better charge-collection performance of CIS absorber material by increasing extended state mobility and carrier lifetime, when carrier transport and kinetics are coupled. Charge carrier transport was characterized after DPLC, showing mobility increased by 2 orders of magnitude. Photocurrent under AM1.5 illumination was measured and shown 10 times enhancement of integrated power density after DPLC, which may lead to higher efficiency in photo-electric energy conversion.« less

Ultra-high aspect ratio copper nanowires as transparent conductive electrodes for dye sensitized solar cells

NASA Astrophysics Data System (ADS)

Zhu, Zhaozhao; Mankowski, Trent; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

2016-09-01

We report the synthesis of ultra-high aspect ratio copper nanowires (CuNW) and fabrication of CuNW-based transparent conductive electrodes (TCE) with high optical transmittance (>80%) and excellent sheet resistance (Rs <30 Ω/sq). These CuNW TCEs are subsequently hybridized with aluminum-doped zinc oxide (AZO) thin-film coatings, or platinum thin film coatings, or nickel thin-film coatings. Our hybrid transparent electrodes can replace indium tin oxide (ITO) films in dye-sensitized solar cells (DSSCs) as either anodes or cathodes. We highlight the challenges of integrating bare CuNWs into DSSCs, and demonstrate that hybridization renders the solar cell integrations feasible. The CuNW/AZO-based DSSCs have reasonably good open-circuit voltage (Voc = 720 mV) and short-circuit current-density (Jsc = 0.96 mA/cm2), which are comparable to what is obtained with an ITO-based DSSC fabricated with a similar process. Our CuNW-Ni based DSSCs exhibit a good open-circuit voltage (Voc = 782 mV) and a decent short-circuit current (Jsc = 3.96 mA/cm2), with roughly 1.5% optical-to-electrical conversion efficiency.

High-Resolution AES Mapping and TEM Study of Cu(In,Ga)Se2 Thin Film Growth: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perkins, C. L.; Yan, Y.; Jones, K.

2001-10-01

Presented at 2001 NCPV Program Review Meeting: TEM and high-resolution AES mapping data on CIGS samples. The chalcopyrite Cu(In,Ga)Se{sub 2} (CIGS) shows promise as an absorber layer in thin polycrystalline solar cells, however, details of the PVD growth of this complicated material remain in a developing stage. Previous workers have postulated the existence of a thin film of liquid Cu{sub x}Se on the growing CIGS film, and that this layer acts as a reservoir of copper as well as a layer in which rapid mass transport is possible. In this paper we present transmission electron microscopy (TEM) and high resolutionmore » Auger electron spectroscopy (AES) mapping data taken on samples that had their growth interrupted at a stage when Cu{sub x}Se was expected to be present. The AES maps show CIGS grains which are highly enriched in copper relative to the rest of the CIGS film, and that these same areas contain almost no indium, results consistent with the presence of CuxSe. Small-area diffraction analysis and energy dispersive spectroscopy (EDS) performed on these same samples independently confirm the presence of Cu{sub x}Se at the surface of growing CIGS films.« less

Copper and liquid crystal polymer bonding towards lead sensing

NASA Astrophysics Data System (ADS)

Redhwan, Taufique Z.; Alam, Arif U.; Haddara, Yaser M.; Howlader, Matiar M. R.

2018-02-01

Lead (Pb) is a highly toxic and carcinogenic heavy metal causing adverse impacts on environment and human health, thus requiring its careful monitoring. In this work, we demonstrate the integration of copper (Cu) film-based electrodes toward Pb sensing. For this, we developed a direct bonding method for Cu thin film and liquid crystal polymer (LCP) substrate using oxygen plasma treatment followed by contact and heat at 230 °C. The oxygen plasma activation forms hydroxyl groups (OH-) on Cu and LCP. The activated surfaces further adsorb water molecules when exposed to clean room air during contact. After contact, hydrogen bonds are formed between the OH- groups. The interfacial water is removed when the contacted films are heated, leading to shrinkage of OH- chain. This results in an intermediate oxide layer linking the Cu and C sites of Cu and LCP respectively. A strong adhesion (670 N·m-1) is obtained between Cu/LCP that may offer prolonged use of the electrode without delamination in wet sensing applications. Anodic stripping voltammetry of Pb using Cu thin film electrode shows a stronger current peak than sputtered Cu electrode, which implies the significance of the direct bonding approach to integrate thin films. We also studied the electrochemical impedance that will enable modeling of integrated environmental sensors for on-site monitoring of heavy metals.

Morphogenesis of nanostructures in glancing angle deposition of metal thin film coatings

NASA Astrophysics Data System (ADS)

Brown, Timothy James

Atomic vapors condensed onto solid surfaces form a remarkable category of condensed matter materials, the so-called thin films, with a myriad of compositions, morphological structures, and properties. The dynamic process of atomic condensation exhibits self-assembled pattern formation, producing morphologies with atomic-scale three- dimensional structures of seemingly limitless variety. This study attempts to shed new light on the dynamical growth processes of thin film deposition by analyzing in detail a previously unreported specific distinct emergent structure, a crystalline triangular-shaped spike that grows within copper and silver thin films. I explored the deposition parameters that lead to the growth of these unique structures, referred to as "nanospikes", fabricating approximately 55 thin films and used scanning electron microscopy and x-ray diffraction analysis. The variation of parameters include: vapor incidence angle, film thickness, substrate temperature, deposition rate, deposition material, substrate, and source-to-substrate distance. Microscopy analysis reveals that the silver and copper films deposited at glancing vapor incidence angles, 80 degrees and greater, have a high degree of branching interconnectivity between adjacent inclined nanorods. Diffraction analysis reveals that the vapor incidence angle influences the sub-populations of crystallites in the films, producing two different [110] crystal texture orientations. I hypothesize that the growth of nanospikes from nanorods is initiated by the stochastic arrival of vapor atoms and photons emitted from the deposition source at small diameter nanorods, and then driven by localized heating from vapor condensation and photon absorption. Restricted heat flow due to nanoscale thermal conduction maintains an elevated local temperature at the nanorod, enhancing adatom diffusion and enabling fast epitaxial crystal growth, leading to the formation and growth of nanospikes. Electron microscopy and x-ray diffraction analysis, and comparisons to related scientific literature, support this hypothesis. I also designed a highly modular ultrahigh vacuum deposition chamber, capable of concurrently mounting several different pieces of deposition equipment, that allows for a high degree of control of the growth dynamics of deposited thin films. I used the newly designed chamber to fabricate tailor-made nanostructured tantalum films for use in ultracapacitors, for the Cabot Corporation.

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

PubMed Central

2014-01-01

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein. PMID:25593559

Resistence seam welding thin copper foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hollar, D.L. Jr.

1991-02-01

Use of flat flexible circuits in the electronics industry is expanding. The term flexible circuits'' is defined here as copper foil which has been bonded to an insulating film such as Kapton film. The foil is photo processed to produce individual circuit paths similar to printed circuit boards. Another insulating film is laminated over the conductors to complete the flexible circuit. Flexible circuits, like multiwire cables, are susceptible to electromagnetic radiation (EMR) interference. On multiwire cables the interference problem is mitigated by adding a woven wire braid shielding over the conductors. Shielding on flexible circuits is accomplished by enclosing themore » circuits in a copper foil envelope. However, the copper foil must be electrically sealed around the flexcircuit to be effective. Ultimately, a resistance seam welding process and appropriate equipment were developed which would provide the required electrical seal between two layers of 2-oz (0.0028-inch thick) copper foil on a 1.1-inch wide, 30-inch long, 0.040-inch thick flexible circuit. 4 refs., 19 figs.« less

Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

PubMed

Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

2017-06-01

The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Constitutive response of passivated copper films to thermal cycling

NASA Astrophysics Data System (ADS)

Shen, Y.-L.; Ramamurty, U.

2003-02-01

The thermomechanical behavior of passivated thin copper films is studied. Stresses in copper films of thickness ranging from 125 to 1000 nm, deposited on quartz or silicon substrates and passivated with silicon oxide, were measured using the curvature method. The thermal cycling spans a temperature range from -196 to 600 °C. The measured mechanical behavior was found to be rate insensitive within the heating/cooling rate range of 5-25 °C/min. It was observed that the passivated films do not exhibit a significant stress relaxation at elevated temperatures that is normally found in unpassivated films. Furthermore, a significant strain hardening during the course of thermal loading was noted. Simple continuum plasticity analyses show that the experimentally measured stress-temperature response can only be rationalized with a kinematic hardening model. Analytical procedures for extracting the constitutive properties of the films that were developed on the basis of such a model are presented. The initial yield strength is higher and tends to be less temperature dependent in thinner films. The strain hardening rate is found to increase with decreasing film thickness.

New precursors and chemistry for the growth of transition metal films by atomic layer deposition

NASA Astrophysics Data System (ADS)

Knisley, Thomas Joseph

The advancing complexity of advanced microelectronic devices is placing rigorous demands on currently used PVD and CVD deposition techniques. The ALD deposition method is proposed to meet the film thickness and conformality constraints needed by the semiconductor industry in future manufacturing processes. Unfortunately, there is a limited number of chemical precursors available that have high thermal stability, reactivity, and vapor pressure suitable for ALD film growth to occur. These properties collectively contribute to the lack of suitable transition metal precursors available for use in ALD. In this thesis, we report the discovery of a series of novel transition metal diazadienate precursors that promising properties deemed suitable for ALD. The volatility and thermal stability of the new transition metal diazadienyl compounds were studied by preparative sublimation and capillary tube melting point/decomposition experiments. Thermogravimetric analyses (TGA) demonstrate precursor residues of less than 4% at 500 °C. In addition, sublimation data, melting points, and decomposition temperatures for all complexes are presented. The manganese diazadienyl complex has the highest decomposition temperature of the series of complexes produced (325 °C). During preparative sublimations, the product recoveries of all transition metal diazadienyl complexes were greater than 92.0% with nonvolatile residues of less than 7.0%. This is an excellent indication that these complexes may be suitable candidates as metal precursors for ALD. Nickel nitride (NixN) films have been studied as an intermediate material for the formation of both nickel metal and nickel silicide using chemical vapor deposition. Herein, we describe the ALD growth of nickel nitride thin films from bis(1,4-di-tert-butyl-1,3-diazabutadiene) nickel(II) (Ni(tBu2DAD)2) and 1,1-dimethylhydrazine. An ALD window for the deposition of nickel nitride films on 500 nm thermal SiO2 substrates was observed between 225 and 240 °C with a constant growth rate of 0.70 Å/cycle. X-Ray photoelectron spectroscopy (XPS) showed all expected ionizations with carbon concentrations below the detection limit after argon ion sputtering. Due to preferential nitrogen sputtering in XPS, Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) were performed and subsequently revealed Ni:N ratios between 2-4 for films deposited within the ALD window. AFM measurements revealed a RMS roughness value of 10.8 nm on an as-deposited film at 225°C. All as-deposited films were amorphous as determined by X-ray diffraction. Copper is the primary interconnect material in microelectronics devices, due to its high conductivity and low affinity towards electromigration. With transistor gate lengths scheduled to reach 14 nm by 2014, there are severe demands upon the current film growth techniques used in device fabrication. The ALD film growth method is ideally suited for future microelectronics manufacturing, since it inherently provides highly conformal thin films, even in high aspect ratio nanoscale features, and allows sub-nanometer control over film thicknesses. In Chapter 4, we describe the atomic layer deposition of high purity, low resistivity copper metal thin films using a three precursor sequence entailing Cu(dmap)2, formic acid, and hydrazine. In this process, Cu(dmap) 2 is unreactive towards hydrazine but is transformed to copper(II) formate, which is then readily reduced to copper metal by subsequent hydrazine exposure. The present work therefore addresses a central problem with the ALD growth of metal thin films: low reactivity of metal precursors toward common reducing agents. A constant growth rate of 0.47-0.50 Å/cycle upon prime grade Si(100) was observed at substrate temperatures between 100 and 170 °C. Compositional analyses (XPS and TOF-ERDA) revealed copper films with low levels of carbon, oxygen, nitrogen, and hydrogen. Powder X-ray diffraction spectra of all films showed polycrystalline copper. The resistivities of films grown between 100 and 140 °C ranged between 9.6 and 16.4 μΩ·cm, demonstrating the growth of high purity, low resistivity copper films. An AFM measurement revealed a RMS roughness value of 3.5 nm on an as-deposited 50 nm Cu film at 120 °C.

Thermal Effusivity Determination of Metallic Films of Nanometric Thickness by the Electrical Micropulse Method

NASA Astrophysics Data System (ADS)

Lugo, J. M.; Oliva, A. I.

2017-02-01

The thermal effusivity of gold, aluminum, and copper thin films of nanometric thickness (20 nm to 200 nm) was investigated in terms of the films' thickness. The metallic thin films were deposited onto glass substrates by thermal evaporation, and the thermal effusivity was estimated by using experimental parameters such as the specific heat, thermal conductivity, and thermal diffusivity values obtained at room conditions. The specific heat, thermal conductivity, and thermal diffusivity values of the metallic thin films are determined with a methodology based on the behavior of the thermal profiles of the films when electrical pulses of few microseconds are applied at room conditions. For all the investigated materials, the thermal effusivity decreases with decreased thickness. The thermal effusivity values estimated by the presented methodology are consistent with other reported values obtained under vacuum conditions and more elaborated methodologies.

Wafer-level hermetic vacuum packaging by bonding with a copper-tin thin film sealing ring

NASA Astrophysics Data System (ADS)

Akashi, Teruhisa; Funabashi, Hirofumi; Takagi, Hideki; Omura, Yoshiteru; Hata, Yoshiyuki

2018-04-01

A wafer-level hermetic vacuum packaging technology intended for use with MEMS devices was developed based on a copper-tin (CuSn) thin film sealing ring. To allow hermetic packaging, the shear strength of the CuSn thin film bond was improved by optimizing the pretreatment conditions. As a result, an average shear strength of 72.3 MPa was obtained and a cavity that had been hermetically sealed using wafer-level packaging (WLP) maintained its vacuum for 1.84 years. The total pressures in the cavities and the partial pressures of residual gases were directly determined with an ultra-low outgassing residual gas analyzer (RGA) system. Hermeticity was evaluated based on helium leak rates, which were calculated from helium pressures determined with the RGA system. The resulting data showed that a vacuum cavity following 1.84 years storage had a total pressure of 83.1 Pa, contained argon as the main residual gas and exhibited a helium leak rate as low as 1.67  ×  10-17 Pa · m3 s-1, corresponding to an air leak rate of 6.19  ×  10-18 Pa · m3 s-1. The RGA data demonstrate that WLP using a CuSn thin film sealing ring permits ultra-high hermeticity in conjunction with long-term vacuum packaging that is applicable to MEMS devices.

Thin-film encapsulation of organic electronic devices based on vacuum evaporated lithium fluoride as protective buffer layer

NASA Astrophysics Data System (ADS)

Peng, Yingquan; Ding, Sihan; Wen, Zhanwei; Xu, Sunan; Lv, Wenli; Xu, Ziqiang; Yang, Yuhuan; Wang, Ying; Wei, Yi; Tang, Ying

2017-03-01

Encapsulation is indispensable for organic thin-film electronic devices to ensure reliable operation and long-term stability. For thin-film encapsulating organic electronic devices, insulating polymers and inorganic metal oxides thin films are widely used. However, spin-coating of insulating polymers directly on organic electronic devices may destroy or introduce unwanted impurities in the underlying organic active layers. And also, sputtering of inorganic metal oxides may damage the underlying organic semiconductors. Here, we demonstrated that by utilizing vacuum evaporated lithium fluoride (LiF) as protective buffer layer, spin-coated insulating polymer polyvinyl alcohol (PVA), and sputtered inorganic material Er2O3, can be successfully applied for thin film encapsulation of copper phthalocyanine (CuPc)-based organic diodes. By encapsulating with LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films, the device lifetime improvements of 10 and 15 times can be achieved. These methods should be applicable for thin-film encapsulation of all kinds of organic electronic devices. Moisture-induced hole trapping, and Al top electrode oxidation are suggest to be the origins of current decay for the LiF/PVA/LiF trilayer and LiF/Er2O3 bilayer films encapsulated devices, respectively.

Composition variations in pulsed-laser-deposited Y-Ba-Cu-O thin films as a function of deposition parameters

NASA Technical Reports Server (NTRS)

Foote, M. C.; Jones, B. B.; Hunt, B. D.; Barner, J. B.; Vasquez, R. P.; Bajuk, L. J.

1992-01-01

The composition of pulsed-ultraviolet-laser-deposited Y-Ba-Cu-O films was examined as a function of position across the substrate, laser fluence, laser spot size, substrate temperature, target conditioning, oxygen pressure and target-substrate distance. Laser fluence, laser spot size, and substrate temperature were found to have little effect on composition within the range investigated. Ablation from a fresh target surface results in films enriched in copper and barium, both of which decrease in concentration until a steady state condition is achieved. Oxygen pressure and target-substrate distance have a significant effect on film composition. In vacuum, copper and barium are slightly concentrated at the center of deposition. With the introduction of an oxygen background pressure, scattering results in copper and barium depletion in the deposition center, an effect which increases with increasing target-substrate distance. A balancing of these two effects results in stoichiometric deposition.

Depth profile composition studies of thin film CdS:Cu2S solar cells using XPS and AES

NASA Astrophysics Data System (ADS)

Bhide, V. G.; Salkalachen, S.; Rastogi, A. C.; Rao, C. N. R.; Hegde, M. S.

1981-09-01

Studies of the surface composition and depth profiles of thin film CdS:Cu2S solar cells based on the techniques of X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) are reported. Specimens were fabricated by the thermal deposition of polycrystalline CdS films onto silver-backed electrodes predeposited on window glass substrates, followed by texturization in hot HCl and chemical plating in a hot CuCl(I) bath for a few seconds to achieve the topotaxial growth of CuS films. The XPS and AES studies indicate the junction to be fairly diffused in the as-prepared cell, with heat treatment in air at 210 C sharpening the junction, improving the stoichiometry of the Cu2S layer and thus improving cell performance. The top copper sulfide layer is found to contain impurities such as Cd, Cl, O and C, which may be removed by mild Ar(+) ion beam etching. The presence of copper deep in the junction is invariably detected, apparently in the grain boundary region in the form of CuS or Cu(2+) trapped in the lattice. It is also noted that the nominal valence state of copper changes abruptly from Cu(+) to Cu(2+) across the junction.

Structure and morphology of CdS thin films electrodeposited in fused salts

NASA Astrophysics Data System (ADS)

Markov, I.; Valova, E.; Ilieva, M.; Kristev, I.

1983-12-01

Thin films of CdS are catholically electrodeposited on copper and silver electrodes in solution of CdCl 2 and Na 2SO 3 in fused LiCl-KCl eutectic. The films consist only of the hexagonal wurtzite phase of CdS. The films grown on Cu substrates are polycrystalline without pronounced fibre texture. The films grown on Ag substrates show practically perfect (000-) texture exposing the Cd face at the film surface. Films deposited at high bath temperatures (450-500°C), low current densities (0.2-0.5 mA/cm 2) or doped with In during the growth are very smooth. From the morphological investigations it is concluded that the CdS films electrodeposited onto Ag substrates have well pronounced laminar structure.

Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

NASA Astrophysics Data System (ADS)

Che, Franklin; Grabtchak, Serge; Whelan, William M.; Ponomarenko, Sergey A.; Cada, Michael

We have experimentally measured the surface second-harmonic generation (SHG) of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver.

Deposition and properties of cobalt- and ruthenium-based ultra-thin films

NASA Astrophysics Data System (ADS)

Henderson, Lucas Benjamin

Future copper interconnect systems will require replacement of the materials that currently comprise both the liner layer(s) and the capping layer. Ruthenium has previously been considered as a material that could function as a single material liner, however its poor ability to prevent copper diffusion makes it incompatible with liner requirements. A recently described chemical vapor deposition route to amorphous ruthenium-phosphorus alloy films could correct this problem by eliminating the grain boundaries found in pure ruthenium films. Bias-temperature stressing of capacitor structures using 5 nm ruthenium-phosphorus film as a barrier to copper diffusion and analysis of the times-to-failure at accelerated temperature and field conditions implies that ruthenium-phosphorus performs acceptably as a diffusion barrier for temperatures above 165°C. The future problems associated with the copper capping layer are primarily due to the poor adhesion between copper and the current Si-based capping layers. Cobalt, which adheres well to copper, has been widely proposed to replace the Si-based materials, but its ability to prevent copper diffusion must be improved if it is to be successfully implemented in the interconnect. Using a dual-source chemistry of dicobaltoctacarbonyl and trimethylphosphine at temperatures from 250-350°C, amorphous cobalt-phosphorus can be deposited by chemical vapor deposition. The films contain elemental cobalt and phosphorus, plus some carbon impurity, which is incorporated in the film as both graphitic and carbidic (bonded to cobalt) carbon. When deposited on copper, the adhesion between the two materials remains strong despite the presence of phosphorus and carbon at the interface, but the selectivity for growth on copper compared to silicon dioxide is poor and must be improved prior to consideration for application in interconnect systems. A single molecule precursor containing both cobalt and phosphorus atoms, tetrakis(trimethylphosphine)cobalt(0), yields cobalt-phosphorus films without any co-reactant. However, the molecule does not contain sufficient amounts of amorphizing agents to fully eliminate grain boundaries, and the resulting film is nanocrystalline.

Temperature, Crystalline Phase and Influence of Substrate Properties in Intense Pulsed Light Sintering of Copper Sulfide Nanoparticle Thin Films.

PubMed

Dexter, Michael; Gao, Zhongwei; Bansal, Shalu; Chang, Chih-Hung; Malhotra, Rajiv

2018-02-02

Intense Pulsed Light sintering (IPL) uses pulsed, visible light to sinter nanoparticles (NPs) into films used in functional devices. While IPL of chalcogenide NPs is demonstrated, there is limited work on prediction of crystalline phase of the film and the impact of optical properties of the substrate. Here we characterize and model the evolution of film temperature and crystalline phase during IPL of chalcogenide copper sulfide NP films on glass. Recrystallization of the film to crystalline covellite and digenite phases occurs at 126 °C and 155 °C respectively within 2-7 seconds. Post-IPL films exhibit p-type behavior, lower resistivity (~10 -3 -10 -4  Ω-cm), similar visible transmission and lower near-infrared transmission as compared to the as-deposited film. A thermal model is experimentally validated, and extended by combining it with a thermodynamic approach for crystal phase prediction and via incorporating the influence of film transmittivity and optical properties of the substrate on heating during IPL. The model is used to show the need to a-priori control IPL parameters to concurrently account for both the thermal and optical properties of the film and substrate in order to obtain a desired crystalline phase during IPL of such thin films on paper and polycarbonate substrates.

Production of pulsed ultra slow muons and first /μSR experiments on thin metallic and magnetic films

NASA Astrophysics Data System (ADS)

Träger, K.; Breitrück, A.; Trigo, M. Diaz; Grossmann, A.; Jungmann, K.; Merkel, J.; Meyer, V.; Neumayer, P.; Pachl, B.; zu Putlitz, G.; Santra, R.; William, L.; Allodi, G.; Bucci, C.; Renzi, R. De; Galli, F.; Guidi, G.; Shiroka, T.; Eaton, G. H.; King, P. J. C.; Scott, C. A.; Williams, G. W.; Roduner, E.; Scheuermann, R.; Charlton, M. C.; Donnelly, P.; Pareti, L.; Turilli, G.

2000-08-01

At ISIS, RAL (UK) we have produced a pulsed ultra-slow muon beam (E≲20 eV) and performed the first μSR experiments. Thanks to the pulsed feature, the implantation time is automatically determined and, by adjusting the final muon energy between ∼8 keV and 20 eV, depth slicing experiments are possible down to monolayers distances. We report slicing experiments across a 20 nm copper film on quartz substrate with evidence for a 2 nm copper oxide surface layer. A preliminary experiment on a hexagonal cobalt film suggests the existence of muon precession in the local magnetic field.

Al2O3 and TiO2 atomic layer deposition on copper for water corrosion resistance.

PubMed

Abdulagatov, A I; Yan, Y; Cooper, J R; Zhang, Y; Gibbs, Z M; Cavanagh, A S; Yang, R G; Lee, Y C; George, S M

2011-12-01

Al(2)O(3) and TiO(2) atomic layer deposition (ALD) were employed to develop an ultrathin barrier film on copper to prevent water corrosion. The strategy was to utilize Al(2)O(3) ALD as a pinhole-free barrier and to protect the Al(2)O(3) ALD using TiO(2) ALD. An initial set of experiments was performed at 177 °C to establish that Al(2)O(3) ALD could nucleate on copper and produce a high-quality Al(2)O(3) film. In situ quartz crystal microbalance (QCM) measurements verified that Al(2)O(3) ALD nucleated and grew efficiently on copper-plated quartz crystals at 177 °C using trimethylaluminum (TMA) and water as the reactants. An electroplating technique also established that the Al(2)O(3) ALD films had a low defect density. A second set of experiments was performed for ALD at 120 °C to study the ability of ALD films to prevent copper corrosion. These experiments revealed that an Al(2)O(3) ALD film alone was insufficient to prevent copper corrosion because of the dissolution of the Al(2)O(3) film in water. Subsequently, TiO(2) ALD was explored on copper at 120 °C using TiCl(4) and water as the reactants. The resulting TiO(2) films also did not prevent the water corrosion of copper. Fortunately, Al(2)O(3) films with a TiO(2) capping layer were much more resilient to dissolution in water and prevented the water corrosion of copper. Optical microscopy images revealed that TiO(2) capping layers as thin as 200 Å on Al(2)O(3) adhesion layers could prevent copper corrosion in water at 90 °C for ~80 days. In contrast, the copper corroded almost immediately in water at 90 °C for Al(2)O(3) and ZnO films by themselves on copper. Ellipsometer measurements revealed that Al(2)O(3) films with a thickness of ~200 Å and ZnO films with a thickness of ~250 Å dissolved in water at 90 °C in ~10 days. In contrast, the ellipsometer measurements confirmed that the TiO(2) capping layers with thicknesses of ~200 Å on the Al(2)O(3) adhesion layers protected the copper for ~80 days in water at 90 °C. The TiO(2) ALD coatings were also hydrophilic and facilitated H(2)O wetting to copper wire mesh substrates. © 2011 American Chemical Society

Enhanced amperometric detection of metronidazole in drug formulations and urine samples based on chitosan protected tetrasulfonated copper phthalocyanine thin-film modified glassy carbon electrode.

PubMed

Meenakshi, S; Pandian, K; Jayakumari, L S; Inbasekaran, S

2016-02-01

An enhanced electrocatalytic reduction of metronidazole antibiotic drug molecule using chitosan protected tetrasulfonated copper phthalocyanine (Chit/CuTsPc) thin-film modified glassy carbon electrode (GCE) has been developed. An irreversible reduction occurs at -0.47V (vs. Ag/AgCl) using Chit/CuTsPc modified GCE. A maximum peak current value is obtained at pH1 and the electrochemical reduction reaction is a diffusion controlled one. The detection limit is found to be 0.41nM from differential pulse voltammetry (DPV) method. This present investigation method is adopted for electrochemical detection of metronidazole in drug formulation and urine samples by using DPV method. Copyright © 2015 Elsevier B.V. All rights reserved.

Application of polymer-coated glassy carbon electrodes to the direct determination of trace metals in body fluids by anodic tripping voltametry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoyer, B.; Florence, T.M.

This paper describes the use of a polymer-coated thin mercury film electrode for the direct determination of trace metals in body fluids by anodic stripping voltametry. The antifouling properties of the membrane coating greatly improve the analytical signal in comparison with the conventional thin mercury film electrode. Lead in whole blood, urine, and sweat and copper in sweat can be determined accurately with sample acidification as the only pretreatment step, while the determination of copper in serum requires sample deproteination prior to analysis. Owing to an improved procedure for the preparation of the perfluorosulfonated membrane, the lifetime of the electrodemore » is at least one working day when used continuously in acidified body fluids.« less

Design and performance of a high-Tc superconductor coplanar waveguide filter

NASA Technical Reports Server (NTRS)

Chew, Wilbert; Riley, A. L.; Rascoe, Daniel L.; Hunt, Brian D.; Foote, Marc C.; Cooley, Thomas W.; Bajuk, Louis J.

1991-01-01

The design of a coplanar waveguide low-pass filter made of YBa2Cu3O(7-delta) (YBCO) on an LaAlO3 substrate is described. Measurements were incorporated into simple models for microwave CAD analysis to develop a final design. The patterned and packaged coplanar waveguide low-pass filter of YBCO, with dimensions suited for integrated circuits, exhibited measured insertion losses when cooled in liquid nitrogen superior to those of a similarly cooled thin-film copper filter throughout the 0 to 9.5 GHz passband. Coplanar waveguide models for use with thin-film normal metal (with thickness either greater or less than the skin depth) and YBCO are discussed and used to compare the losses of the measured YBCO and copper circuits.

Planarized thick copper gate polycrystalline silicon thin film transistors for ultra-large AMOLED displays

NASA Astrophysics Data System (ADS)

Yun, Seung Jae; Lee, Yong Woo; Son, Se Wan; Byun, Chang Woo; Reddy, A. Mallikarjuna; Joo, Seung Ki

2012-08-01

A planarized thick copper (Cu) gate low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) is fabricated for ultra-large active-matrix organic light-emitting diode (AMOLED) displays. We introduce a damascene and chemical mechanical polishing process to embed a planarized Cu gate of 500 nm thickness into a trench and Si3N4/SiO2 multilayer gate insulator, to prevent the Cu gate from diffusing into the silicon (Si) layer at 550°C, and metal-induced lateral crystallization (MILC) technology to crystallize the amorphous Si layer. A poly-Si TFT with planarized thick Cu gate exhibits a field effect mobility of 5 cm2/Vs and a threshold voltage of -9 V, and a subthreshold swing (S) of 1.4 V/dec.

Fabrication of eco-friendly PNP transistor using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, B. Santhosh; Harinee, N.; Purvaja, K.; Shanker, N. Praveen; Manikandan, M.; Aparnadevi, N.; Mukilraj, T.; Venkateswaran, C.

2018-05-01

An effort has been made to fabricate a thin film transistor using eco-friendly oxide semiconductor materials. Oxide semiconductor materials are cost - effective, thermally and chemically stable with high electron/hole mobility. Copper (II) oxide is a p-type semiconductor and zinc oxide is an n-type semiconductor. A pnp thin film transistor was fabricated using RF magnetron sputtering. The films deposited have been subjected to structural characterization using AFM. I-V characterization of the fabricated device, Ag/CuO/ZnO/CuO/Ag, confirms transistor behaviour. The mechanism of electron/hole transport of the device is discussed below.

Electrodeposition of near stoichiometric CuInSe2 thin films for photovoltaic applications

NASA Astrophysics Data System (ADS)

Chandran, Ramkumar; Mallik, Archana

2018-03-01

This work investigates on the single step electrodeposition of quality CuInSe2 (CIS) thin film absorber layer for photovoltaics applications. The electrodeposition was carried using an aqueous acidic solution with a pH of 2.25. The deposition was carried using a three electrode system in potentiostatic conditions for 50 minutes. The as-deposited and nitrogen (N2) annealed films were characterized using XRD, FE-SEM and Raman spectroscopy. It has been observed that the SDS has the tendency to suppress the copper selenide (CuxSe) secondary phase which is detrimental to the device performance.

Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

PubMed Central

Kneiβ, Max; Lorenz, Michael

2016-01-01

A degenerate p-type conduction of cuprous iodide (CuI) thin films is achieved at the iodine-rich growth condition, allowing for the record high room-temperature conductivity of ∼156 S/cm for as-deposited CuI and ∼283 S/cm for I-doped CuI. At the same time, the films appear clear and exhibit a high transmission of 60–85% in the visible spectral range. The realization of such simultaneously high conductivity and transparency boosts the figure of merit of a p-type TC: its value jumps from ∼200 to ∼17,000 MΩ−1. Polycrystalline CuI thin films were deposited at room temperature by reactive sputtering. Their electrical and optical properties are examined relative to other p-type transparent conductors. The transport properties of CuI thin films were investigated by temperature-dependent conductivity measurements, which reveal a semiconductor–metal transition depending on the iodine/argon ratio in the sputtering gas. PMID:27807139

The thermal conductivity of chemical-vapor-deposited diamond films on silicon

NASA Astrophysics Data System (ADS)

Graebner, J. E.; Mucha, J. A.; Seibles, L.; Kammlott, G. W.

1992-04-01

The thermal conductivity of chemical-vapor-deposited diamond films on silicon is measured for the case of heat flow parallel to the plane of the film. A new technique uses thin-film heaters and thermometers on a portion of the film which is made to be free standing by etching away the substrate. Effects of thermal radiation are carefully avoided by choosing the length scale properly. Data for several films yield thermal conductivities in the range 2-6 W/cm C. This is comparable to copper (4 W/cm C) and is in a range that would be useful as a thin-film dielectric material, provided that the interface thermal resistance can be minimized. The conductivity varies inversely with the growth rate and the Raman linewidth.

Thermal conversion of Cu4O3 into CuO and Cu2O and the electrical properties of magnetron sputtered Cu4O3 thin films

NASA Astrophysics Data System (ADS)

Murali, Dhanya S.; Aryasomayajula, Subrahmanyam

2018-03-01

Among the three oxides of copper (CuO, Cu2O, and Cu4O3), Cu4O3 phase (paramelaconite is a natural, and very scarce mineral) is very difficult to synthesize. It contains copper in both + 1 and + 2 valence states, with an average composition Cu2 1+Cu2 2+O3. We have successfully synthesized Cu4O3 phase at room temperature (300 K) by reactive DC magnetron sputtering by controlling the oxygen flow rate (Murali and Subrahmanyam in J Phys D Appl Phys 49:375102, 2016). In the present communication, Cu4O3 thin films are converted to CuO phases by annealing in the air at 680 K and to Cu2O phase when annealed in argon at 720 K; these phase changes are confirmed by temperature-dependent Raman spectroscopy studies. Probably, this is the first report of the conversion of Cu4O3-CuO and Cu2O by thermal annealing. The temperature-dependent (300-200 K) electrical transport properties of Cu4O3 thin films show that the charge transport above 190 K follows Arrhenius-type behavior with activation energy of 0.14 eV. From photo-electron spectroscopy and electrical transport measurements of Cu4O3 thin films, a downward band bending is observed at the surface of the thin film, which shows its p-type semiconducting nature. The successful preparation of phase pure p-type semiconducting Cu4O3 could provide opportunities to further explore its potential applications.

Thin film superconductors and process for making same

DOEpatents

Nigrey, P.J.

1988-01-21

A process for the preparation of oxide superconductors from high-viscosity non-aqueous solution is described. Solutions of lanthanide nitrates, alkaline earth nitrates and copper nitrates in a 1:2:3 stoichiometric ratio, when added to ethylene glycol containing citric acid solutions, have been used to prepare highly viscous non-aqueous solutions of metal mixed nitrates-citrates. Thin films of these compositions are produced when a layer of the viscous solution is formed on a substrate and subjected to thermal decomposition.

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

NASA Astrophysics Data System (ADS)

Das, Sayantan; Alford, T. L.

2013-06-01

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

Characterization and growth analysis of two types of thin films formed on copper surfaces: An inorganic chromium containing film and an organic film formed via reduction of diazonium ions

NASA Astrophysics Data System (ADS)

Hurley, Belinda Louise

Surface enhanced Raman scattering was used to observe interactions of dilute CrVI solutions with silver and copper surfaces in situ. Using silver as a model surface, CrIII was observed at the near monolayer level, and the spectra were compared to those from CrIII oxyhydroxide species and CrIII/Cr VI mixed oxide. Similar experiments were conducted with copper surfaces and 785 nm excitation. Upon exposure of a copper surface to CrVI solution, the characteristic copper oxide Raman bands disappeared, and a Cr III band increased in intensity over a period of ˜20 hours. The intensity of the CrIII band on copper became self limiting after the formation of several CrIII monolayers, as supported by chronoamperometry experiments. This CrIII spectrum was stable after CrVI was removed from the solution provided the potential remained negative of -200 mV vs. Ag/AgCl. The results support the conclusion that CrVI is reductively adsorbed to copper at the near neutral pH and open circuit potentials expected for Cu/Al alloys in field applications. The CrIII film is stable and strongly inhibits oxygen reduction at the treated copper surface. Copper surfaces and polished Aluminum Alloy 2024 T3 substrates were derivatized at open circuit potential with arenediazonium salts in both aprotic and aqueous media. Raman spectroscopy confirmed the presence of a derivatized film on the substrates before and after exposure to boiling water and sonication in acetone. Preliminary experiments to test these films for corrosion inhibition proved unsuccessful. Aluminum and copper substrates were prepared and used for x-ray photoelectron spectroscopy (XPS) analysis of the derivatization results. In the copper experiments, one surface was native oxide copper, predominantly in the form of Cu2O, and one surface was predominantly Cu 0. Results of the XPS analysis indicate the presence of a Cu-O-C linkage and possibly a Cu-C covalent bond between the aryl ring and the copper substrate. XPS results also indicate the formation of multilayers on both types of copper surfaces with different percentages of azo coupling within the multilayers on the two surfaces. These easily prepared, covalently bonded organic films could be used for applications currently fulfilled with self-absorbed monolayers and Langmuir Blodgett films.

Nanostructure iron-silicon thin film deposition using plasma focus device

NASA Astrophysics Data System (ADS)

Kotb, M.; Saudy, A. H.; Hassaballa, S.; Eloker, M. M.

2013-03-01

The presented study in this paper reports the deposition of nano-structure iron-silicon thin film on a glass substrate using 3.3 KJ Mather-type plasma focus device. The iron-silicon powder was put on the top of hollow copper anode electrode. The deposition was done under different experimental conditions such as numbers of electric discharge shots and angular position of substrate. The film samples were exposed to energetic argon ions generated by plasma focus device at different distances from the top of the central electrode. The exposed samples were then analyzed for their structure and optical properties using X-ray diffraction (XRD) and UV-visible spectroscopy. The structure of iron-silicon thin films deposited using plasma focus device depends on the distance from the anode, the number of focus deposition shots and the angular position of the sample

Electron transport properties in fluorinated copper-phthalocyanine films: importance of vibrational reorganization energy and molecular microstructure.

PubMed

Wu, Fu-Chiao; Cheng, Horng-Long; Yen, Chen-Hsiang; Lin, Jyu-Wun; Liu, Shyh-Jiun; Chou, Wei-Yang; Tang, Fu-Ching

2010-03-07

Electron transport (ET) properties of a series of fluorinated copper-phthalocyanine (F(16)CuPc) thin films, which were deposited at different substrate temperatures (T(sub)) ranging from 30 to 150 degrees C, have been investigated by quantum mechanical calculations of the reorganization energy (lambda(reorg)), X-ray diffraction (XRD), atomic force microscopy (AFM), and microRaman spectroscopy. Density functional theory calculations were used to predict the vibrational frequencies, normal mode displacement vectors, and electron-vibrational lambda(reorg) for the F(16)CuPc molecule. The electron mobilities (mu(e)) of F(16)CuPc thin films are strongly dependent on the T(sub), and the value of mu(e) increases with increasing T(sub) from 30 to 120 degrees C, at which point it reaches its maximum value. The importance of electron-vibrational coupling and molecular microstructures for ET properties in F(16)CuPc thin films are discussed on the basis of theoretical vibrational lambda(reorg) calculations and experimental observations of resonance Raman spectra. We observed a good correlation between mu(e) and the full-width-at-half-maximum of the vibrational bands, which greatly contributed to lambda(reorg) and/or which reflects the molecular microstructural quality of the active channel. In contrast, the crystal size analysis by XRD and surface grain morphology by AFM did not reveal a clear correlation with the ET behaviours for these different F(16)CuPc thin films. Therefore, we suggest that for organic films with weak intermolecular interactions, such as F(16)CuPc, optimized microscopic molecular-scale parameters are highly important for efficient long-range charge transport in the macroscopic devices.

Doping effect on SILAR synthesized crystalline nanostructured Cu-doped ZnO thin films grown on indium tin oxide (ITO) coated glass substrates and its characterization

NASA Astrophysics Data System (ADS)

Dhaygude, H. D.; Shinde, S. K.; Velhal, Ninad B.; Takale, M. V.; Fulari, V. J.

2016-08-01

In the present study, a novel chemical route is used to synthesize the undoped and Cu-doped ZnO thin films in aqueous solution by successive ionic layer adsorption and reaction (SILAR) method. The synthesized thin films are characterized by x-ray diffractometer (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersive x-ray analysis (EDAX), contact angle goniometer and UV-Vis spectroscopic techniques. XRD study shows that the prepared films are polycrystalline in nature with hexagonal crystal structure. The change in morphology for different doping is observed in the studies of FE-SEM. EDAX spectrum shows that the thin films consist of zinc, copper and oxygen elements. Contact angle goniometer is used to measure the contact angle between a liquid and a solid interface and after detection, the nature of the films is initiated from hydrophobic to hydrophilic. The optical band gap energy for direct allowed transition ranging between 1.60-2.91 eV is observed.

Synthesis of non-hydrazine solution processed Cu2(ZnSn)S4 thin films for solar cells applications

NASA Astrophysics Data System (ADS)

Gupta, Indu; Gupta, Preeti; Mohanty, Bhaskar Chandra

2017-05-01

Solution processing provides a versatile and inexpensive means to prepare Cu2ZnSnS4 (CZTS) thin films for photovoltaic applications. Differently with the reported growth of CZTS films from hydrazine based toxic solutions, we demonstrate a simple non-toxic ethanol based solution approach to synthesize the films. Using the chemical bath deposition (CBD) method, the CZTS thin films were grown from metal salts (copper chloride, zinc chloride, and tin chloride) in ethanol and monoethanol amine (MEA) and thioacetamide in ethanol as sulfur source in a single dip followed by sulfurization. The structure, composition, morphology and optical properties of the CZTS film were studied by X-ray diffraction, scanning electron microscopy and UV-vis spectroscopy. The results revealed that a post-deposition sulfurization is necessary to the phase formation and among all, sulfurization at 450°C for 60 min yielded phase pure CZTS films having kesterite structure, relatively compact morphology and an optical band gap of ˜1.52 eV indicating its suitability for solar cell applications. The results clearly validate the CBD method as a potential scalable route of preparation of CZTS thin films.

Spin Exchange Interaction in Substituted Copper Phthalocyanine Crystalline Thin Films

NASA Astrophysics Data System (ADS)

Rawat, Naveen; Pan, Zhenwen; Lamarche, Cody J.; Wetherby, Anthony; Waterman, Rory; Tokumoto, Takahisa; Cherian, Judy G.; Headrick, Randall L.; McGill, Stephen A.; Furis, Madalina I.

2015-11-01

The origins of spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a specific state in the valence band manifold originating from the hybridized lone pair in nitrogen orbitals of the Phthalocyanine ring, bears the Brillouin-like signature of an exchange interaction with the localized d-shell Cu spins. A comprehensive MCD spectral analysis coupled with a molecular field model of a σπ - d exchange analogous to sp-d interactions in Diluted Magnetic Semiconductors (DMS) renders an enhanced Zeeman splitting and a modified g-factor of -4 for the electrons that mediate the interaction. These studies define an experimental tool for identifying electronic states involved in spin-dependent exchange interactions in organic materials.

Spin Exchange Interaction in Substituted Copper Phthalocyanine Crystalline Thin Films

PubMed Central

Rawat, Naveen; Pan, Zhenwen; Lamarche, Cody J.; Wetherby, Anthony; Waterman, Rory; Tokumoto, Takahisa; Cherian, Judy G.; Headrick, Randall L.; McGill, Stephen A.; Furis, Madalina I.

2015-01-01

The origins of spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a specific state in the valence band manifold originating from the hybridized lone pair in nitrogen orbitals of the Phthalocyanine ring, bears the Brillouin-like signature of an exchange interaction with the localized d-shell Cu spins. A comprehensive MCD spectral analysis coupled with a molecular field model of a σπ − d exchange analogous to sp-d interactions in Diluted Magnetic Semiconductors (DMS) renders an enhanced Zeeman splitting and a modified g-factor of −4 for the electrons that mediate the interaction. These studies define an experimental tool for identifying electronic states involved in spin-dependent exchange interactions in organic materials. PMID:26559337

Spin Exchange Interaction in Substituted Copper Phthalocyanine Crystalline Thin Films.

PubMed

Rawat, Naveen; Pan, Zhenwen; Lamarche, Cody J; Wetherby, Anthony; Waterman, Rory; Tokumoto, Takahisa; Cherian, Judy G; Headrick, Randall L; McGill, Stephen A; Furis, Madalina I

2015-11-12

The origins of spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a specific state in the valence band manifold originating from the hybridized lone pair in nitrogen orbitals of the Phthalocyanine ring, bears the Brillouin-like signature of an exchange interaction with the localized d-shell Cu spins. A comprehensive MCD spectral analysis coupled with a molecular field model of a σπ - d exchange analogous to sp-d interactions in Diluted Magnetic Semiconductors (DMS) renders an enhanced Zeeman splitting and a modified g-factor of -4 for the electrons that mediate the interaction. These studies define an experimental tool for identifying electronic states involved in spin-dependent exchange interactions in organic materials.

A Study on Anti – Fouling Behaviour and Mechanical Properties of PVA/Chitosan/TEOS Hybrid membrane in The Treatment of Copper Solution

NASA Astrophysics Data System (ADS)

Sulaiman, N. A.; Kassim Shaari, N. Z.; Rahman, N. Abdul

2018-05-01

In a wastewater treatment by using membrane filtration, fouling has been one of the major problems. In this study, the anti-fouling behaviour of the fabricated thin-film composite membrane were studied during the treatment of water containing copper ion. The membranes were prepared from a polymer blend of 2wt.% chitosan with 10 wt.% poly(vinyl alcohol) (PVA) and then it was cross – linked with tetraethylorthosilicate (TEOS) through sol-gel method. The membrane had been evaluated for its resistance against organic fouling where humic acid had been chosen as organic foulant model which represent the natural organic matter (NOM) in water or wastewater. The dead-end filtration experiments were carried out by using 50 ppm of copper solution with and without the presence of humic acid as feed solution, which was passed through two types of thin film composite membranes. The possible reversible fouling was evaluated by using relative flux decay (RFD) and relative flux recovery (RFR) calculations. The percentage of copper ion removal was evaluated by using Atomic Absorption Spectroscopy (AAS). Based on the results, with the presence of humic acid, the membrane incorporated with silica precursor (TEOS) showed lower flux decay (3%) and higher flux recovery (76%), which show that the formulated hybrid membrane possesses the anti fouling property. The same trend was observed in the mechanical properties of hybrid membrane, where the presence of TEOS has improved the tensile strength and flexibility of the membrane. Therefore, the fabricated thin film composite with the anti-fouling properties and good physical flexibility has potential to be used in the treatment of wastewater containing heavy metal as it could result in good saving in term of operational cost.

Phase modification of copper phthalocyanine semiconductor by converting powder to thin film

NASA Astrophysics Data System (ADS)

Ai, Xiaowei; Lin, Jiaxin; Chang, Yufang; Zhou, Lianqun; Zhang, Xianmin; Qin, Gaowu

2018-01-01

Thin films of copper phthalocyanine (CuPc) semiconductor were deposited on glass substrates by a thermal evaporation system using the CuPc powder in a high vacuum. The crystal structures of both the films and the powder were measured by the X-ray diffraction spectroscopy technique. It is observed that CuPc films only show one peak at 6.84°, indicating a high texture of α phase along (200) orientation. In comparison, CuPc powder shows a series of peaks, which are confirmed from the mixture of both α and β phases. The effects of substrate anneal temperature on the film structure, grain size and optical absorption property of CuPc films were also investigated. All the films are of α phase and the full width of half maximum for (200) diffraction peak becomes narrow with increasing the substrate temperatures. The average grain size calculated by the Scherrer's formula is 33.63 nm for the film without anneal, which is increased up to 58.29 nm for the film annealed at 200 °C. Scanning electron microscope was further measured to prove the growth of crystalline grain and to characterize the morphologies of CuPc films. Ultraviolet-visible absorption spectra were employed to study the structure effect on the optical properties of both CuPc films and powder. Fourier Transform infrared spectroscopy was used to identify the crystalline nature of both CuPc powder and film.

Face-on stacking and enhanced out-of-plane hole mobility in graphene-templated copper phthalocyanine.

PubMed

Mativetsky, Jeffrey M; Wang, He; Lee, Stephanie S; Whittaker-Brooks, Luisa; Loo, Yueh-Lin

2014-05-25

Efficient out-of-plane charge transport is required in vertical device architectures, such as organic solar cells and organic light emitting diodes. Here, we show that graphene, transferred onto different technologically-relevant substrates, can be used to induce face-on molecular stacking and improve out-of-plane hole transport in copper phthalocyanine thin films.

Uptake of Light Elements in Thin Metallic Films

NASA Astrophysics Data System (ADS)

Markwitz, Andreas; Waldschmidt, Mathias

Ion beam analysis was used to investigate the influence of substrate temperature on the inclusion of impurities during the deposition process of thin metallic single and double layers. Thin layers of gold and aluminium were deposited at different temperatures onto thin copper layers evaporated on silicon wafer substrates. The uptake of oxygen in the layers was measured using the highly sensitive non-resonant reaction 16O(d,p)170O at 920 keV. Nuclear reaction analysis was also used to probe for carbon and nitrogen with a limit of detection better than 20 ppm. Hydrogen depth profiles were measured using elastic recoil detection on the nanometer scale. Rutherford backscattering spectroscopy was used to determine the depth profiles of the metallic layers and to study diffusion processes. The combined ion beam analyses revealed an uptake of oxygen in the layers depending on the different metallic cap layers and the deposition temperature. Lowest oxygen values were measured for the Au/Cu layers, whereas the highest amount of oxygen was measured in Al/Cu layers deposited at 300°C. It was also found that with single copper layers produced at various temperatures, oxygen contamination occurred during the evaporation process and not afterwards, for example, as a consequence of the storage of the films under normal conditions for several days. Hydrogen, carbon, and nitrogen were found as impurities in the single and double layered metallic films, a finding that is in agreement with the measured oxidation behaviour of the metallic films.

Reliability design and assessment of a micro-probe using the results of a tensile test of a beryllium-copper alloy thin film

NASA Astrophysics Data System (ADS)

Park, Jun-Hyub; Shin, Myung-Soo

2011-09-01

This paper describes the results of tensile tests for a beryllium-copper (BeCu) alloy thin film and the application of the results to the design of a probe. The copper alloy films were fabricated by electroplating. To obtain the tensile characteristics of the film, the dog-bone type specimen was fabricated by the etching method. The tensile tests were performed with the specimen using a test machine developed by the authors. The BeCu alloy has an elastic modulus of 119 GPa and the 0.2% offset yield and ultimate tensile strengths of 1078 MPa and 1108 MPa, respectively. The design and manufacture of a smaller probe require higher pad density and smaller pad-pitch chips. It should be effective in high-frequency testing. For the design of a new micro-probe, we investigated several design parameters that may cause problems, such as the contact force and life, using the tensile properties and the design of experiment method in conjunction with finite element analysis. The optimal dimensions of the probe were found using the response surface method. The probe with optimal dimensions was manufactured by a precision press process. It was verified that the manufactured probe satisfied the life, the contact force and the over drive through the compression tests and the life tests of the probes.

A new preparation of a bifunctional crystalline heterogeneous copper electrocatalyst by electrodeposition using a Robson-type macrocyclic dinuclear copper complex for efficient hydrogen and oxygen evolution from water.

PubMed

Majumder, Samit; Abdel Haleem, Ashraf; Nagaraju, Perumandla; Naruta, Yoshinori

2017-07-18

The development of low-cost, stable bifunctional electrocatalysts, which operate in the same electrolyte with a low overpotential for water splitting, including the oxygen evolution reaction and the hydrogen evolution reaction, remains an attractive prospect and a great challenge. In this study, a water soluble Robson-type macrocyclic dicopper(ii) complex has been used for the first time as a catalyst precursor for the generation of a copper-based bifunctional heterogeneous catalyst film, which can be used for both HER and OER at a near neutral pH. In sodium borate buffer at pH 9.20, this complex decomposed to give a Cu(OH) 2 /Cu 2 O-based thin film on FTO that catalyzes both hydrogen production and water oxidation. The morphology, nature and composition of the thin film were fully characterized by scanning electron microscopy, powder X-ray diffraction, X-ray photoelectron, and energy dispersive X-ray spectroscopies. The catalyst film showed high stability during the course of electrolysis in either the cathodic or the anodic direction for more than 4 h. Faradaic efficiencies of ∼92% for HER and ∼96% for OER were achieved. The switch between the two half-reactions of catalytic water splitting was fully reversible in nature.

A novel cyanide ion sensing approach based on Raman scattering for the detection of environmental cyanides.

PubMed

Yan, Fei; Gopal Reddy, C V; Zhang, Yan; Vo-Dinh, Tuan

2010-09-01

This paper describes a direct optical approach based on Raman scattering for selective and sensitive detection of cyanide ions in aqueous environment without requiring time-consuming sample pretreatment and the formation of hydrogen cyanide. Due to the strong affinity between copper (I) and cyanide ion, evaporated copper (I) iodide (CuI) thin films are shown to be excellent substrates for selective recognition of free cyanide ions in aqueous matrices. The amount of cyanide ion retained by the copper (I) in the CuI thin films reflects its actual concentration in tested samples, and the subsequent Raman measurements of the substrate are shown to be capable of detecting toxic cyanide content at levels under international drinking water standard and environmental regulatory concentrations. Measurements obtained from the same batch of evaporated CuI thin films (approximately 100-nm thickness) show excellent linearity over a variety of cyanide concentrations ranging from 1.5 microM to 0.15 mM. This detection method offers the advantage of selectively detecting cyanides causing a health hazard while avoiding detection of other common interfering anions such as Cl-, Br-, PO4(3-), SO4(2-), NO2-, S2- and SCN-. Coupled with portable Raman systems that are commercially available, our detection approach will provide on-site monitoring capability with little sample preparation or instrument supervision, which will greatly expedite the assessment of potential environmental cyanide risks. Copyright (c) 2010 Elsevier Inc. All rights reserved.

Graphene-based copper oxide thin film nanostructures as high-efficiency photocathode for p-type dye-sensitized solar cells

NASA Astrophysics Data System (ADS)

Kilic, Bayram; Turkdogan, Sunay; Astam, Aykut; Baran, Sümeyra Seniha; Asgin, Mansur; Cebeci, Hulya; Urk, Deniz

2017-10-01

Graphene-based p-type dye-sensitized solar cells (p-DSSCs) have been proposed and fabricated using copper oxide urchin-like nanostructures (COUN) as photocathode with an FeS2 counter electrode (CE). COUN composed of Cu2O core sphere and CuO shell nanorods with overall diameters of 2 to 4 μm were grown by a simple hydrothermal method with self-assemble nucleation. It was figured out that the formation of copper oxide core/shell structures could be adjusted by an ammonia additive leading to pH change of the precursor solution. In addition to a photocathode, we also demonstrated FeS2 thin films as an efficient CE material alternative to the conventional Pt CEs in DSSCs. FeS2 nanostructures, with diameters of 50 to 80 nm, were synthesized by a similar hydrothermal approach. FeS2 nanostructures are demonstrated to be an outstanding CE material in p-DSSCs. We report graphene/COUN as photocathode and Pt/FeS2 as CE in p-DSSCs, and results show that the synergetic combination of electrodes in each side (increased interconnectivity between COUN and graphene layer, high surface area, and high catalytic activity of FeS2) increased the power conversion efficiency from 1.56% to 3.14%. The excellent performances of COUN and FeS2 thin film in working and CEs, respectively, make them unique choices among the various photocathode and CE materials studied.

Advances in thin-film solar cells for lightweight space photovoltaic power

NASA Technical Reports Server (NTRS)

Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

1989-01-01

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

In-situ diagnostics for metalorganic chemical vapor deposition of yttrium barium copper oxide

NASA Astrophysics Data System (ADS)

Tripathi, Ashok Burton

A new stagnation flow MOCVD research reactor is described that is designed to serve as a testbed to develop tools for "intelligent" thin film deposition, such as in-situ sensors and diagnostics, control algorithms, and thin film growth models. The reactor is designed in particular for the deposition of epitaxial YBa2Cu3O 7-delta on MgO, although with minor modifications it would be suitable for deposition of any metal-oxide thin films. The reactor is specifically designed to permit closed-loop thermal and stoichiometric control of the film growth process. Closed-loop control of precursor flow rates is accomplished by using ultraviolet absorption spectroscopy on each precursor line. Also integrated into the design is a Fourier Transform Infrared (FTIR) spectroscopy system which collects real-time, in-situ infrared polarized reflectance spectra of the film as it grows. Numerical simulation was used extensively to optimize the fluid dynamics and heat transfer to provide uniform fluxes to the substrate. As a result, thickness uniformity across the substrate is typically within 3% from the center to the edge of the substrate. Experimental studies of thin films grown in the Y/Ba/Cu/O system have been carried out. The films have been characterized by Rutherford Backscattering Spectrometry and X-ray Diffraction. Results indicate c-axis oriented grains with pure 1:2:3 phase YBCO, good spatial uniformity, and a low degree of c-axis wobble. Experimental growth data is used in a gas phase and surface chemistry model to calculate sticking coefficients for yttrium oxide, barium oxide, and copper oxide on YBCO. In-situ FTIR and Coherent Gradient Sensing (CGS) analysis of growing films has been performed, yielding accurate substrate temperature, film thickness monitoring, and full-field, real-time curvature maps of the films. In addition, we have implemented CGS to obtain full-field in-situ images of local curvature during oxygenation and deoxygenation of YBCO films. An analysis of the oxygen diffusion is performed, and diffusivity constants are presented for a variety of temperature and film conditions.

A flexible method for the preparation of thin film samples for in situ TEM characterization combining shadow-FIB milling and electron-beam-assisted etching.

PubMed

Liebig, J P; Göken, M; Richter, G; Mačković, M; Przybilla, T; Spiecker, E; Pierron, O N; Merle, B

2016-12-01

A new method for the preparation of freestanding thin film samples for mechanical testing in transmission electron microscopes is presented. It is based on a combination of focused ion beam (FIB) milling and electron-beam-assisted etching with xenon difluoride (XeF 2 ) precursor gas. The use of the FIB allows for the target preparation of microstructural defects and enables well-defined sample geometries which can be easily adapted in order to meet the requirements of various testing setups. In contrast to existing FIB-based preparation approaches, the area of interest is never exposed to ion beam irradiation which preserves a pristine microstructure. The method can be applied to a wide range of thin film material systems compatible with XeF 2 etching. Its feasibility is demonstrated for gold and alloyed copper thin films and its practical application is discussed. Copyright © 2016 Elsevier B.V. All rights reserved.

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

DOE PAGES

Riha, Shannon C.; Koegel, Alexandra A.; Meng, Xiangbo; ...

2016-01-19

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure r-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase, consisting of both r- and a-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS) allow the derivation of a self-consistent reaction mechanism. Lastly, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cyclemore » stability and near-theoretical capacity.« less

Preparation of Cu-doped nickel oxide thin films and their properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gowthami, V.; Meenakshi, M.; Anandhan, N.

2014-04-24

Copper doped Nickel oxide film was preferred on glass substrate by simple nebulizer technique keeping the substrate temperature at 350°C and characterized by X-ray diffraction (XRD), Photoluminescence (PL) and Four probe resistivity measurements. XRD studies indicated cubic structure and the crystallites are preferentially oriented along the [111] direction. Interesting results have been obtained from the study of PL spectra. A peak corresponding to 376nm in the emission spectra for 0%, 5% and 10% copper doped samples. The samples show sharp and strong UV emission corresponding to the near band edge emission under excitation of 275nm.

Preparation of thin ceramic films via an aqueous solution route

DOEpatents

Pederson, Larry R.; Chick, Lawrence A.; Exarhos, Gregory J.

1989-01-01

A new chemical method of forming thin ceramic films has been developed. An aqueous solution of metal nitrates or other soluble metal salts and a low molecular weight amino acid is coated onto a substrate and pyrolyzed. The amino acid serves to prevent precipitation of individual solution components, forming a very viscous, glass-like material as excess water is evaporated. Using metal nitrates and glycine, the method has been demonstrated for zirconia with various levels of yttria stabilization, for lanthanum-strontium chromites, and for yttrium-barium-copper oxide superconductors on various substrates.

Thin film solar energy collector

DOEpatents

Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

1983-11-22

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers

NASA Astrophysics Data System (ADS)

Mehrabian, M.; Esteki, Z.; Shokrvash, H.; Kavei, G.

2016-10-01

Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV-visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2+ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu2+ ion concentration was increased, which indicates that the acceptor level (of Cu2+) is getting close to the valence band of ZnS.

Determination of surface resistance and magnetic penetration depth of superconducting YBa2Cu3O(7-delta) thin films by microwave power transmission measurements

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Warner, J. D.; Miranda, F. A.; Gordon, W. L.; Newman, H. S.

1991-01-01

A novel waveguide power transmission measurement technique was developed to extract the complex conductivity of superconducting thin films at microwave frequencies. The microwave conductivity was taken of two laser ablated YBa2Cu3O(7-delta) thin films on LaAlO3 with transition temperatures of approximately 86.3 and 82 K, respectively, in the temperature range 25 to 300 K. From the conductivity values, the penetration depth was found to be approximately 0.54 and 0.43 micron, and the surface resistance (R sub s) to be approximately 24 and 36 micro-Ohms at 36 GHz and 76 K for the two films under consideration. The R sub s values were compared with those obtained from the change in the Q-factor of a 36 GHz Te sub 011-mode (OFHC) copper cavity by replacing one of its end walls with the superconducting sample. This technique allows noninvasive characterization of high transition superconducting thin films at microwave frequencies.

Determination of surface resistance and magnetic penetration depth of superconducting YBa2Cu3O(7-delta) thin films by microwave power transmission measurements

NASA Technical Reports Server (NTRS)

Bhasin, K. B.; Warner, J. D.; Miranda, F. A.; Gordon, W. L.; Newman, H. S.

1990-01-01

A novel waveguide power transmission measurement technique was developed to extract the complex conductivity of superconducting thin films at microwave frequencies. The microwave conductivity was taken of two laser ablated YBa2Cu3O(7-delta) thin films on LaAlO3 with transition temperatures of approx. 86.3 and 82 K, respectively, in the temperature range 25 to 300 K. From the conductivity values, the penetration depth was found to be approx. 0.54 and 0.43 micron, and the surface resistance (R sub s) to be approx. 24 and 36 micro-Ohms at 36 GHz and 76 K for the two films under consideration. The R sub s values were compared with those obtained from the change in the Q-factor of a 36 GHz Te sub 011-mode (OFHC) copper cavity by replacing one of its end walls with the superconducting sample. This technique allows noninvasive characterization of high transition temperature superconducting thin films at microwave frequencies.

The use of small angle X-ray scattering (SAXS) for the characterisation of lustre surfaces in Renaissance majolica

NASA Astrophysics Data System (ADS)

Fermo, P.; Cariati, F.; Cipriani, C.; Canetti, M.; Padeletti, G.; Brunetti, B.; Sgamellotti, A.

2002-01-01

In this work some Renaissance lustre decorated ceramics have been examined. Our attention was directed to lustre which is a thin decorative metallic film applied on the surfaces of previously glazed ancient pottery. Some 16th century lustre ceramics shards from Deruta, Umbria (Italy) have been analysed by small angle X-ray scattering (SAXS) in order to characterise the dimension of the metal nanocrystals forming the thin lustre layer. This technique appeared to be a powerful tool to characterise lustre films nanostructure and may be successfully used for this purpose together with transmission electron microscopy (TEM). Furthermore, SAXS measurements are extremely suitable for the determination of polydispersity and average interparticle distance. The lustre surfaces have been also analysed by scanning electron microscopy plus X-ray energy dispersive spectrometry (SEM-EDX) in order to identify the metals present (silver, copper or both of them) and to establish copper/silver ratios. From the comparison between SAXS results and compositional data, it was possible to conclude that copper particles are smaller than the silver ones. We have evidenced how the microtexture as well as the chemical composition of the lustre layers are responsible for the gold or red colour typical of the lustre films.

Copper Benzenetricarboxylate Metal-Organic Framework Nucleation Mechanisms on Metal Oxide Powders and Thin Films formed by Atomic Layer Deposition.

PubMed

Lemaire, Paul C; Zhao, Junjie; Williams, Philip S; Walls, Howard J; Shepherd, Sarah D; Losego, Mark D; Peterson, Gregory W; Parsons, Gregory N

2016-04-13

Chemically functional microporous metal-organic framework (MOF) crystals are attractive for filtration and gas storage applications, and recent results show that they can be immobilized on high surface area substrates, such as fiber mats. However, fundamental knowledge is still lacking regarding initial key reaction steps in thin film MOF nucleation and growth. We find that thin inorganic nucleation layers formed by atomic layer deposition (ALD) can promote solvothermal growth of copper benzenetricarboxylate MOF (Cu-BTC) on various substrate surfaces. The nature of the ALD material affects the MOF nucleation time, crystal size and morphology, and the resulting MOF surface area per unit mass. To understand MOF nucleation mechanisms, we investigate detailed Cu-BTC MOF nucleation behavior on metal oxide powders and Al2O3, ZnO, and TiO2 layers formed by ALD on polypropylene substrates. Studying both combined and sequential MOF reactant exposure conditions, we find that during solvothermal synthesis ALD metal oxides can react with the MOF metal precursor to form double hydroxy salts that can further convert to Cu-BTC MOF. The acidic organic linker can also etch or react with the surface to form MOF from an oxide metal source, which can also function as a nucleation agent for Cu-BTC in the mixed solvothermal solution. We discuss the implications of these results for better controlled thin film MOF nucleation and growth.

Single laser based pump-probe technique to study plasma shielding during nanosecond laser ablation of copper thin films

NASA Astrophysics Data System (ADS)

Nammi, Srinagalakshmi; Vasa, Nilesh J.; Gurusamy, Balaganesan; Mathur, Anil C.

2017-09-01

A plasma shielding phenomenon and its influence on micromachining is studied experimentally and theoretically for laser wavelengths of 355 nm, 532 nm and 1064 nm. A time resolved pump-probe technique is proposed and demonstrated by splitting a single nanosecond Nd3+:YAG laser into an ablation laser (pump laser) and a probe laser to understand the influence of plasma shielding on laser ablation of copper (Cu) clad on polyimide thin films. The proposed nanosecond pump-probe technique allows simultaneous measurement of the absorption characteristics of plasma produced during Cu film ablation by the pump laser. Experimental measurements of the probe intensity distinctly show that the absorption by the ablated plume increases with increase in the pump intensity, as a result of plasma shielding. Theoretical estimation of the intensity of the transmitted pump beam based on the thermo-temporal modeling is in qualitative agreement with the pump-probe based experimental measurements. The theoretical estimate of the depth attained for a single pulse with high pump intensity value on a Cu thin film is limited by the plasma shielding of the incident laser beam, similar to that observed experimentally. Further, the depth of micro-channels produced shows a similar trend for all three wavelengths, however, the channel depth achieved is lesser at the wavelength of 1064 nm.

Conductive copper sulfide thin films on polyimide foils

NASA Astrophysics Data System (ADS)

Cardoso, J.; Gomez Daza, O.; Ixtlilco, L.; Nair, M. T. S.; Nair, P. K.

2001-02-01

Kapton polyimide is known for its high thermal stability, >400 °C. Copper sulfide thin films of 75 and 100 nm thickness were coated on DuPont Kapton HN polyimide foils of 25 µm thickness by floating them on a chemical bath containing copper complexes and thiourea. The coated foils were annealed at 150-400 °C in nitrogen, converting the coating from CuS to Cu1.8S. The sheet resistance of the annealed coatings (100 nm) is 10-50 Ω/□ and electrical conductivity, 2-10×103 Ω-1 cm- 1, which remain nearly constant even after the foils are immersed in 0.1-1 M HCl for 30-120 min. The coated polyimide has a transmittance (25-35%) peak located in the wavelength region 550-600 nm, with transmittance dropping to near zero below 450 nm and below 10% in the near-infrared spectral region. These characteristics are relevant in solar radiation control applications. The coated foils might also be used as conductive substrates for electrolytic deposition of metals and semiconductors and for optoelectronic device structures.

The biocorrosion of copper by biopolymers as examined in situ, in real time FT-IR/CIR/ATR in conjunction with pre and post XPS/AES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gianotto, A.K.; Wichlacz, P.L.; Jolley, J.G.

1989-01-01

Thin films of copper (2.0 nm on germanium internal reflection elements (IREs) and 3.4 nm on germanium discs) were exposed to 10% gum arabic (aqueous solution), 2% alginic acid (aqueous solution), 1% bacterial culture supernatant (BCS, simulated seawater solution) and 0.5% Pseudomonas atlantica exopolymer (simulated seawater solution). The IREs were monitored in situ, in real time using fourier transform infrared/cylindrical internal reflection/attenuated total reflection spectroscopy as a function of time at ambient conditions. The discs were characterized (pre- and post-exposure) by x-ray photoelectron and Auger electron spectroscopies. Ancillary graphite furnace atomic absorption spectroscopy was used to monitor the removal processmore » of the copper thin film from the germanium substrates. Results indicate that Cu was oxidized by gum arabic, alginic acid and BCS. Furthermore, Cu was removed from the Cu/Ge interface by all four polymers. The Cu was found associated with the polymer solutions. 20 refs., 6 figs., 1 tab.« less

Metal Nanowires: Synthesis, Processing, and Structure-Property Relationships in the Context of Flexible Transparent Conducting Films

NASA Astrophysics Data System (ADS)

Rathmell, Aaron R.

The demand for flat-panel televisions, e-readers, smart-phones, and touch-screens has been increasing over the past few years and will continue to increase for the foreseeable future. Each of these devices contains a transparent conductor, which is usually indium tin oxide (ITO) because of its high transparency and low sheet resistance. ITO films, however, are brittle, expensive, and difficult to deposit, and because of these problems, alternative transparent electrodes are being studied. One cheap and flexible alternative to ITO is films of randomly oriented copper nanowires. We have developed a synthesis to make long, thin, and well-dispersed copper nanowires that can be suspended in an ink and coated onto a substrate to make flexible transparent films. These films are then made conductive by annealing in a hydrogen atmosphere or by a solution processing technique that can be done in air at room temperature. The resulting flexible transparent conducting films display transparencies and sheet resistance values comparable to ITO. Since it is well known that copper oxidizes, we also developed a synthesis to coat the copper nanowires with a layer of nickel in solution. Our measurements indicated that copper nanowires would double their sheet resistance in 3 months, but the sheet resistance of cupronickel nanowire films containing 20 mole% nickel will double in about 400 years. The addition of nickel to the copper nanowires also gave the film a more neutral grey appearance. The nickel coating can also be applied to the copper nanowires after the film is formed via an electroless plating method. To further optimize the properties of our transparent conductors we developed a framework to understand how the dimensions and area coverage of the nanowires affect the overall film properties. To quantify the effect of length on the sheet resistance and transmittance, wires with different lengths but the same diameter were synthesized to make transparent conducting films and finite-difference time-domain calculations were used to determine the effect of the nanowire diameter on the film's transmittance. The experimental data and calculations were then incorporated into random resistor network simulations that demonstrated that wires with an aspect ratio of 400 or higher are required to make a network that transmits >90% of visible light while maintaining a sheet resistance below 100 O/sq-1. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make copper and cupronickel nanowire films a promising alternative for the sustainable, efficient production of transparent conductors.

Stabilization of solar films against hi temperature deactivation

DOEpatents

Jefferson, Clinton F.

1984-03-20

A multi-layer solar energy collector of improved stability comprising: (1) a solar absorptive film consisting essentially of copper oxide, cobalt oxide and manganese oxide; (2) a substrate of quartz, silicate glass or a stainless steel; and (3) an interlayer of platinum, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of platinum to obtain a stable conductor-dielectric tandem.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Willian de Souza Lucas, Francisco; Peng, Haowei; Johnston, Steve

Copper antimony disulfide (CuSbS 2) has several excellent bulk optoelectronic properties for photovoltaic absorber applications. Here, we report on the defect properties in CuSbS 2thin film materials and photovoltaic devices studied using several experimental methods supported by theoretical calculations.

Technical Note: A novel interdigital transparent thin-film detector for medical dosimetry.

PubMed

Brivio, Davide; Sajo, Erno; Zygmanski, Piotr

2017-05-01

A new type of thin-film interdigital detector (TFID) for medical dosimetry is investigated. The focus of this study was to characterize the detector response as a function of detector geometry in an attempt to optimize it and to understand the underlying radio-electrical effects leading to signal formation. We characterize the detector response to kilovoltage x-ray beams used in fluoroscopy and computed tomography. Each element (pixel) of the detector is composed of conductive intercombing digits deposited on a thin-film dielectric substrate by nanofabrication or using a printing process. The detector is practically transparent to x-ray radiation, yet it generates sufficient signal for many types of medical dosimetry and quality assurance tasks. The thin-film detector has negligible surface mass density (about 2.5 mg/cm 2 for a 1-μm-thick Cu TFID on 12.5-μm-thick Kapton substrate) and it is conformable to curved geometries found in the medical x-ray equipment or on patient skin surface. The prototype detectors were made using glass and Kapton substrates with copper-copper and copper-aluminum interdigits. Although in principle the detector can be operated without any external bias voltage when the digits are made of disparate materials (e.g., Cu-Al), we also characterized the detector properties under small electric fields via its current-voltage curve (IV curve). Using 120 kVp, 25 mA x-ray beam with 10V external bias, the Cu-Cu detector response was about 0.2 nA/cm 2 . We also measured a one-dimensional transmitted dose profile for a phantom under fluoroscopic x-rays and found relatively good agreement with a commercial photodiode (XR R12-0191, IBA Dosimetry). We demonstrated the potential of TFID detectors for kilovoltage dosimetry and we defined its optimal geometry. For digits made of the same material and for digit width equal to the separation between them, we found that the thin-film detector has optimal performance when the distance between the digit centers is about 1 mm, while in the fixed digit width cases we observed that the signal is higher when their edge-to-edge separation is as small as possible. © 2017 American Association of Physicists in Medicine.

Structure and photoelectrochemistry of silver-copper-indium-diselenide ((AgCu)InSe2) thin film

NASA Astrophysics Data System (ADS)

Zhang, Lin Rui; Li, Tong; Wang, Hao; Pang, Wei; Chen, Yi Chuan; Song, Xue Mei; Zhang, Yong Zhe; Yan, Hui

2018-02-01

In this work, silver (Ag) precursors with different thicknesses were sputtered on the surfaces of CuIn alloys, and (AgCu)InSe2 (ACIS) films were formed after selenization at 550 °C under nitrogen condition using a rapid thermal process furnace. The structure and electrical properties of the ACIS films were investigated. The result showed that the distribution of Ag+ ion was more uniform with increasing the thickness of Ag precursor, and the surface of the thin-film became more homogeneous and denser. When Ag/Cu ratio ≥0.249, the small grain particles disappeared. The band gap can be rationally controlled by adjusting Ag content. When (Ag + Cu)/In ratio ≥ 1.15, the surface of the ACIS thin-film mainly exhibited n-type semiconductor. Through the photoelectrochemistry measurement, it was observed that the incorporation of Ag+ ions could improve photocurrent by adjusting the band gap. With the Ag precursor thickness increased, the dark current decreased at the more negative potential.

Optimization of vertical and lateral distances between target and substrate in deposition process of CuGaSe 2 thin films using one-step sputtering

DOE PAGES

Park, Jae -Cheol; Al-Jassim, Mowafak; Kim, Tae -Won

2017-02-01

Here, copper gallium selenide (CGS) thin films were fabricated using a combinatorial one-step sputtering process without an additional selenization process. The sample libraries as a function of vertical and lateral distance from the sputtering target were synthesized on a single soda-lime glass substrate at the substrate temperature of 500 °C employing a stoichiometric CGS single target. As we increased the vertical distance between the target and substrate, the CGS thin films had more stable and uniform characteristics in structural and chemical properties. Under the optimized conditions of the vertical distance (150 mm), the CGS thin films showed densely packed grainsmore » and large grain sizes up to 1 μm in scale with decreasing lateral distances. The composition ratio of Ga/[Cu+Ga] and Se/[Cu+Ga] showed 0.50 and 0.93, respectively, in nearly the same composition as the sputtering target. X-ray diffraction and Raman spectroscopy revealed that the CGS thin films had a pure chalcopyrite phase without any secondary phases such as Cu–Se or ordered vacancy compounds, respectively. In addition, we found that the optical bandgap energies of the CGS thin films are shifted from 1.650 to 1.664 eV with decreasing lateral distance, showing a near-stoichiometric region with chalcopyrite characteristics.« less

Electron Emission from Amorphous Solid Water Induced by Passage of Energetic Protons and Fluorine Ions

PubMed Central

Toburen, L. H.; McLawhorn, S. L.; McLawhorn, R. A.; Carnes, K. D.; Dingfelder, M.; Shinpaugh, J. L.

2013-01-01

Absolute doubly differential electron emission yields were measured from thin films of amorphous solid water (ASW) after the transmission of 6 MeV protons and 19 MeV (1 MeV/nucleon) fluorine ions. The ASW films were frozen on thin (1-μm) copper foils cooled to approximately 50 K. Electrons emitted from the films were detected as a function of angle in both the forward and backward direction and as a function of the film thickness. Electron energies were determined by measuring the ejected electron time of flight, a technique that optimizes the accuracy of measuring low-energy electron yields, where the effects of molecular environment on electron transport are expected to be most evident. Relative electron emission yields were normalized to an absolute scale by comparison of the integrated total yields for proton-induced electron emission from the copper substrate to values published previously. The absolute doubly differential yields from ASW are presented along with integrated values, providing single differential and total electron emission yields. These data may provide benchmark tests of Monte Carlo track structure codes commonly used for assessing the effects of radiation quality on biological effectiveness. PMID:20681805

Polycrystalline Thin Film Photovoltaics: Research, Development, and Technologies: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ullal, H. S.; Zweibel, K.; von Roedern, B.

2002-05-01

II-VI binary thin-film solar cells based on cadmium telluride (CdTe) and I-III-VI ternary thin-film solar cells based on copper indium diselenide (CIS) and related materials have been the subject of intense research and development in the past few years. Substantial progress has been made thus far in the area of materials research, device fabrication, and technology development, and numerous applications based on CdTe and CIS have been deployed worldwide. World record efficiency of 16.5% has been achieved by NREL scientists for a thin-film CdTe solar cell using a modified device structure. Also, NREL scientists achieved world-record efficiency of 21.1% formore » a thin-film CIGS solar cell under a 14X concentration and AM1.5 global spectrum. When measured under a AM1.5 direct spectrum, the efficiency increases to 21.5%. Pathways for achieving 25% efficiency for tandem polycrystalline thin-film solar cells are elucidated. R&D issues relating to CdTe and CIS are reported in this paper, such as contact stability and accelerated life testing in CdTe, and effects of moisture ingress in thin-film CIS devices. Substantial technology development is currently under way, with various groups reporting power module efficiencies in the range of 7.0% to 12.1% and power output of 40.0 to 92.5 W. A number of lessons learned during the scale-up activities of the technology development for fabrication of thin-film power modules are discussed. The major global players actively involved in the technology development and commercialization efforts using both rigid and flexible power modules are highlighted.« less

Hard TiCx/SiC/a-C:H nanocomposite thin films using pulsed high energy density plasma focus device

NASA Astrophysics Data System (ADS)

Umar, Z. A.; Rawat, R. S.; Tan, K. S.; Kumar, A. K.; Ahmad, R.; Hussain, T.; Kloc, C.; Chen, Z.; Shen, L.; Zhang, Z.

2013-04-01

Thin films of TiCx/SiC/a-C:H were synthesized on Si substrates using a complex mix of high energy density plasmas and instability accelerated energetic ions of filling gas species, emanated from hot and dense pinched plasma column, in dense plasma focus device. The conventional hollow copper anode of Mather type plasma focus device was replaced by solid titanium anode for synthesis of TiCx/SiC/a-C:H nanocomposite thin films using CH4:Ar admixture of (1:9, 3:7 and 5:5) for fixed 20 focus shots as well as with different number of focus shots with fixed CH4:Ar admixture ratio 3:7. XRD results showed the formation of crystalline TiCx/SiC phases for thin film synthesized using different number of focus shots with CH4:Ar admixture ratio fixed at 3:7. SEM results showed that the synthesized thin films consist of nanoparticle agglomerates and the size of agglomerates depended on the CH4:Ar admixture ratio as well as on the number of focus shots. Raman analysis showed the formation of polycrystalline/amorphous Si, SiC and a-C for different CH4:Ar ratio as well as for different number of focus shots. The XPS analysis confirmed the formation of TiCx/SiC/a-C:H composite thin film. Nanoindentation results showed that the hardness and elastic modulus values of composite thin films increased with increasing number of focus shots. Maximum values of hardness and elastic modulus at the surface of the composite thin film were found to be about 22 and 305 GPa, respectively for 30 focus shots confirming the successful synthesis of hard composite TiCx/SiC/a-C:H coatings.

Microstructural characterization of ultra thin copper interconnects

NASA Astrophysics Data System (ADS)

Yang, Hee-Dong

The present study investigates the defects related to reliability issues, such as physical failures developed during processing and end use. In the first part of this study, kinetic analysis using the Johnson-Mehl-Avrami (JMA) model demonstrates that a self-annealing mechanism in electroplated Cu films depends on the film properties, such as thickness and the amount of crystal defects in an as-deposited state. In order to obtain the evidence of such defects, the microstructural characterization of defects in ultra thin copper interconnects using transmission electron microscopy (TEM) is presented. Examination of the defects using TEM reveals that voids filled with gas form as a lens shape along the {110} habit planes of the copper matrix. In the second part of this study, methodology and results of an electro-thermal-fatigue (ETF) testing, designed for early detection of process defects, are presented. Such ETF testing combines high-density current electrical stressing and thermal cycling to accelerate the evolution of defects in Cu interconnects. In ETF testing, the evolution of defects provides the nucleation sites for voids which open or close during thermal cycling. Then, the accumulation of voids creates the change in resistance when they reach a critical size. As a result of voids evolution, the high current density and high joule heating create a transient resistance increase. ETF testing reveals two failure modes, and the mode-I failure has the importance in detecting defects. The number of cycles to failure in ETF testing decreases with higher current density, but the rate of thermal cycling has no effect. Results from this investigation suggest that impurities in the copper electrodeposition process must be carefully controlled to achieve reliable ultra thin copper interconnects.

SERS and DFT study of copper surfaces coated with corrosion inhibitor

PubMed Central

Muniz-Miranda, Francesco; Caporali, Stefano

2014-01-01

Summary Azole derivatives are common inhibitors of copper corrosion due to the chemical adsorption occurring on the metal surface that gives rise to a protective film. In particular, 1,2,4-triazole performs comparable to benzotriazole, which is much more widely used, but is by no means an environmentally friendly agent. In this study, we have analyzed the adsorption of 1,2,4-triazole on copper by taking advantage of the surface-enhanced Raman scattering (SERS) effect, which highlights the vibrational features of organic ligand monolayers adhering to rough surfaces of some metals such as gold, silver and copper. To ensure the necessary SERS activation, a roughening procedure was implemented on the copper substrates, resulting in nanoscale surface structures, as evidenced by microscopic investigation. To obtain sufficient information on the molecule–metal interaction and the formation of an anticorrosive thin film, the SERS spectra were interpreted with the aid of theoretical calculations based on the density functional theory (DFT) approach. PMID:25671144

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

2008-01-01

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Interaction of atomic oxygen with thin film and bulk copper: An XPS, AES, XRD, and profilometer study

NASA Technical Reports Server (NTRS)

Raikar, Genesh N.; Gregory, John C.; Christl, Ligia C.; Peters, Palmer N.

1992-01-01

The University of Alabama in Huntsville (UAH) experiment A-0114 was designed primarily to study degradation of material surfaces due to low earth orbital (LEO) atmospheric oxygen. The experiment contained 128 one inch circular samples: metals, polymers, carbons, and semiconductors. Among metal samples, copper has shown some interesting new results. Two types of copper samples, a film sputter coated on fused silica and a bulk piece of OFHC copper, were characterized employing a variety of techniques such as X-ray and Auger electron spectroscopies, X-ray diffraction, and high resolution profilometry. Cu 2p core level spectra were used to characterize the presence of Cu2O and CuO in addition to Cu Auger LMM lines. These results are supported by our recent X-ray diffraction studies which clearly establish the presence of Cu oxides which we were unable to prove in our earlier work. Profilometry showed an increase in thickness of the film sample where exposed to 106.7 +/- 0.5 nm from an initial thickness of 74.2 +/- 1.1 nm. Further studies with SEM and ellipsometry are underway.

Dielectric properties of inorganic fillers filled epoxy thin film

NASA Astrophysics Data System (ADS)

Norshamira, A.; Mariatti, M.

2015-07-01

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe2O3) and Titanium Dioxide (TiO2) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types of fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.

Thermal Annealing Effect on Poly(3-hexylthiophene): Fullerene:Copper-Phthalocyanine Ternary Photoactive Layer

PubMed Central

Derouiche, H.; Mohamed, A. B.

2013-01-01

We have fabricated poly(3-hexylthiophene) (P3HT)/copper phthalocyanine (CuPc)/fullerene (C60) ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT/PSS) photoanode and a bathocuproine (BCP)/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM) and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the I-V characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc0.5:C600.5/BCP/Al and ITO/PEDOT:PSS/P3HT0.3:CuPc0.3:C600.4/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation. PMID:23766722

The interaction of atomic oxygen with thin copper films

NASA Technical Reports Server (NTRS)

Gibson, B. C.; Williams, J. R.; Fromhold, A. T., Jr.; Bozack, M. J.; Neely, W. C.; Whitaker, Ann F.

1992-01-01

A source of thermal, ground-state atomic oxygen has been used to expose thin copper films at a flux of 1.4 x 10 exp 17 atoms/sq cm s for times up to 50 min for each of five temperatures between 140 and 200 C. Rutherford backscattering spectroscopy was used to characterize the oxide formed during exposure. The observations are consistent with the oxide phase Cu2O. The time dependence and the temperature dependence of the oxide layer thickness can be described using oxide film growth theory based on rate limitation by diffusion. Within the time and temperature ranges of this study, the growth of the oxide layers is well described by the equation L(T,t) = 3.6 x 10 to 8th exp(- 1.1/2k sub B T)t exp 1/2, where L,T, and t are measured in angstroms, degrees Kelvin, and minutes, respectively. The deduced activation energy is 1.10 +/- 0.15 eV, with the attendant oxidation rate being greater than that for the corresponding reaction in molecular oxygen.

Thermal annealing effect on poly(3-hexylthiophene): fullerene:copper-phthalocyanine ternary photoactive layer.

PubMed

Derouiche, H; Mohamed, A B

2013-01-01

We have fabricated poly(3-hexylthiophene) (P3HT)/copper phthalocyanine (CuPc)/fullerene (C60) ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT/PSS) photoanode and a bathocuproine (BCP)/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM) and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the I-V characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc₀.₅:C60₀.₅/BCP/Al and ITO/PEDOT:PSS/P3HT₀.₃:CuPc₀.₃:C60₀.₄/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation.

Radiation resistance of thin-film solar cells for space photovoltaic power

NASA Technical Reports Server (NTRS)

Woodyard, James R.; Landis, Geoffrey A.

1991-01-01

Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

High-Tc superconductor coplanar waveguide filter

NASA Technical Reports Server (NTRS)

Chew, Wilbert; Bajuk, Louis J.; Cooley, Thomas W.; Foote, Marc C.; Hunt, Brian D.; Rascoe, Daniel L.; Riley, A. L.

1991-01-01

Coplanar waveguide (CPW) low-pass filters made of YBa2Cu3O(7-delta) (YBCO) on LaAlO3 substrates, with dimensions suited for integrated circuits, were fabricated and packaged. A complete filter gives a true idea of the advantages and difficulties in replacing thin-film metal with a high-temperature superconductor in a practical circuit. Measured insertion losses in liquid nitrogen were superior to the loss of a similar thin-film copper filter throughout the 0- to 9.5-GHz passband. These results demonstrate the performance of fully patterned YBCO in a practical CPW structure after sealing in a hermetic package.

Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth

DTIC Science & Technology

2016-02-01

public release; distribution is unlimited. 5 0 50 100 150 200 250 300 350 40 60 80 100 In te ns ity 2 Theta (°) 6:1 Cu/Ni, 15 mT, 400°C...JY, Hong BH. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature. 2009;457:706−710 4. Li XS , Cai WW, An JH

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

Effects of RF plasma treatment on spray-pyrolyzed copper oxide films on silicon substrates

NASA Astrophysics Data System (ADS)

Madera, Rozen Grace B.; Martinez, Melanie M.; Vasquez, Magdaleno R., Jr.

2018-01-01

The effects of radio-frequency (RF) argon (Ar) plasma treatment on the structural, morphological, electrical and compositional properties of the spray-pyrolyzed p-type copper oxide films on n-type (100) silicon (Si) substrates were investigated. The films were successfully synthesized using 0.3 M copper acetate monohydrate sprayed on precut Si substrates maintained at 350 °C. X-ray diffraction revealed cupric oxide (CuO) with a monoclinic structure. An apparent improvement in crystallinity was realized after Ar plasma treatment, attributed to the removal of residues contaminating the surface. Scanning electron microscope images showed agglomerated monoclinic grains and revealed a reduction in size upon plasma exposure induced by the sputtering effect. The current-voltage characteristics of CuO/Si showed a rectifying behavior after Ar plasma exposure with an increase in turn-on voltage. Four-point probe measurements revealed a decrease in sheet resistance after plasma irradiation. Fourier transform infrared spectral analyses also showed O-H and C-O bands on the films. This work was able to produce CuO thin films via spray pyrolysis on Si substrates and enhancement in their properties by applying postdeposition Ar plasma treatment.

Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication

NASA Astrophysics Data System (ADS)

Gułkowski, Sławomir; Krawczak, Ewelina

2017-10-01

Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application.

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

2006-01-01

Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

X-ray absorption fine structure and x-ray diffraction studies of crystallographic grains in nanocrystalline FePd:Cu thin films

NASA Astrophysics Data System (ADS)

Krupinski, M.; Perzanowski, M.; Polit, A.; Zabila, Y.; Zarzycki, A.; Dobrowolska, A.; Marszalek, M.

2011-03-01

FePd alloys have recently attracted considerable attention as candidates for ultrahigh density magnetic storage media. In this paper we investigate FePd thin alloy film with a copper admixture composed of nanometer-sized grains. [Fe(0.9 nm)/Pd(1.1 nm)/Cu(d nm)]×5 multilayers were prepared by thermal deposition at room temperature in UHV conditions on Si(100) substrates covered by 100 nm SiO2. The thickness of the copper layer has been changed from 0 to 0.4 nm. After deposition, the multilayers were rapidly annealed at 600 °C in a nitrogen atmosphere, which resulted in the creation of the FePd:Cu alloy. The structure of alloy films obtained this way was determined by x-ray diffraction (XRD), glancing angle x-ray diffraction, and x-ray absorption fine structure (EXAFS). The measurements clearly showed that the L10 FePd:Cu nanocrystalline phase has been formed during the annealing process for all investigated copper compositions. This paper concentrates on the crystallographic grain features of FePd:Cu alloys and illustrates that the EXAFS technique, supported by XRD measurements, can help to extend the information about grain size and grain shape of poorly crystallized materials. We show that, using an appropriate model of the FePd:Cu grains, the comparison of EXAFS and XRD results gives a reasonable agreement.

Design a sensitive optical thin film sensor based on incorporation of isonicotinohydrazide derivative in sol-gel matrix for determination of trace amounts of copper (II) in fruit juice: Effect of sonication time on immobilization approach.

PubMed

Shahamirifard, Seyed Alireza; Ghaedi, Mehrorang; Montazerozohori, Morteza

2018-04-01

A new selective and sensitive optical sensor based on the incorporation of new synthesized N'-(2-hydroxy-5-iodobenzylidene) isonicotinohydrazide (HIBIN) as an effective reagent into the nanoporous of a transparent glass like material through the sol-gel process was developed which was suitable for the determination of copper (II) ions in aqueous solutions. The thin film sensors were constructed by spin-coating of prepared sol onto glass plate and their surface morphology were studied by field emission scanning electron microscopy (FE-SEM) and atomic force microscope (AFM) technique. Influence of sonication time on immobilization of HIBIN into silica matrix was investigated through calculation of leaching percentage. The Results shown that sonication time of 35 min is suitable to give more stable thin films without fluctuation in sensitivity and response time of presented sensor for a long period of time. The proposed optical sensor can be used for determination of copper (II) ions in the range of 9.1 × 10 -8 -1.12 × 10 -5  mol L -1 with a detection limit of 1.8 × 10 -8  mol L -1 . It also showed relative standard deviation 3.4 and 0.72% for reproducibility and repeatability respectively, along with a fast response time about of 2 min. The constructed optode is stable in wet conditions and could be stored for at least 6 weeks without observing any change in its sensitivity. The developed sensor was successfully applied to the determination of copper (II) in fruit juice and water samples which results were confirmed by atomic absorption spectrometry method. Copyright © 2017 Elsevier B.V. All rights reserved.

Investigation the electroplating behavior of self formed CuMn barrier.

PubMed

Wu, Chia-Yang; Lee, Wen-Hsi; Chang, Shih-Chieh; Wang, Ying-Lang

2013-08-01

The electrical and material properties of Copper (Cu) mixed with [0-10 atomic% manganese (Mn)] and pure Cu films deposited on silicon oxide (SiO2)/silicon (Si) are explored. Cu electroplating on self formed CuMn barrier was investigated with different Mn content. The electrochemical deposition of the Cu thin film onto the electrode using CuMn barrier was investigated. Scanning electron microscopic (SEM) micrographs of copper electroplating on CuMn films were examined, and the copper nucleation behaviors changed with the Mn content. Since the electrochemical impedance spectroscopy (EIS) is widely recognized as a powerful tool for the investigation of electrochemical behaviors, the tool was also used to verify the phenomena during plating. It was found that the charge-trasfer impedance decrease with the rise in the Mn content below 5%, but increase with the rise in the Mn content higher than 5%. The result was corresponded to the surface energy, the surface morphology, the corrosion and the oxidation of the substrate.

Chemically Deposited Thin-Film Solar Cell Materials

NASA Technical Reports Server (NTRS)

Raffaelle, R.; Junek, W.; Gorse, J.; Thompson, T.; Harris, J.; Hehemann, D.; Hepp, A.; Rybicki, G.

2005-01-01

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

PubMed

Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

2008-05-01

Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

Pressure-assisted synthesis of HKUST-1 thin film on polymer hollow fiber at room temperature toward gas separation.

PubMed

Mao, Yiyin; Li, Junwei; Cao, Wei; Ying, Yulong; Sun, Luwei; Peng, Xinsheng

2014-03-26

The scalable fabrication of continuous and defect-free metal-organic framework (MOF) films on the surface of polymeric hollow fibers, departing from ceramic supported or dense composite membranes, is a huge challenge. The critical way is to reduce the growth temperature of MOFs in aqueous or ethanol solvents. In the present work, a pressure-assisted room temperature growth strategy was carried out to fabricate continuous and well-intergrown HKUST-1 films on a polymer hollow fiber by using solid copper hydroxide nanostrands as the copper source within 40 min. These HKUST-1 films/polyvinylidenefluoride (PVDF) hollow fiber composite membranes exhibit good separation performance for binary gases with selectivity 116% higher than Knudsen values via both inside-out and outside-in modes. This provides a new way to enable for scale-up preparation of HKUST-1/polymer hollow fiber membranes, due to its superior economic and ecological advantages.

Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

NASA Astrophysics Data System (ADS)

Arya, Sandeep; Sharma, Asha; Singh, Bikram; Riyas, Mohammad; Bandhoria, Pankaj; Aatif, Mohammad; Gupta, Vinay

2018-05-01

Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and implemented for fabrication of Glass/ITO/n-ZnO/p-CdS/Al thin film photodiode. The fabricated device is tested for small (-1 V to +1 V) bias voltage. Results verified that the junction leakage current within the dark is very small. During reverse bias condition, the maximum amount of photocurrent is obtained under illumination of 100 μW/cm2. Electrical characterizations confirmed that the external quantum efficiency (EQE), gain and responsivity of n-ZnO/p-CdS photodiode show improved photo response than conventional p-type materials for such a small bias voltage. It is therefore revealed that the Cu-doped CdS nanoparticles is an efficient p-type material for fabrication of thin film photo-devices.

Dielectric properties of inorganic fillers filled epoxy thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norshamira, A., E-mail: myra.arshad@gmail.com; Mariatti, M., E-mail: mariatti@usm.my

2015-07-22

The demand on the small size and high performance electronics has driven changes in the electronic packaging requirements from discrete capacitor to embedded capacitor. Embedded capacitor can improve electrical performance compared with discrete capacitor. This study aimed to achieve high dielectric of epoxy thin film composite that were targeted for application as embedded capacitor. In this study, inorganic fillers such as Calcium Copper Titanate (CCTO), Iron(III) Oxide (Fe{sub 2}O{sub 3}) and Titanium Dioxide (TiO{sub 2}) were loaded in epoxy system at 5 and 20vol%. Morphology and dielectric properties were investigated to identify the effect of fillers loading and types ofmore » fillers on the properties of epoxy thin film composite. Based on the study, CCTO with 20vol% loading was found to have good dielectric properties compared to other type of fillers.« less

Eddy Current Testing for Detecting Small Defects in Thin Films

NASA Astrophysics Data System (ADS)

Obeid, Simon; Tranjan, Farid M.; Dogaru, Teodor

2007-03-01

Presented here is a technique of using Eddy Current based Giant Magneto-Resistance sensor (GMR) to detect surface and sub-layered minute defects in thin films. For surface crack detection, a measurement was performed on a copper metallization of 5-10 microns thick. It was done by scanning the GMR sensor on the surface of the wafer that had two scratches of 0.2 mm, and 2.5 mm in length respectively. In another experiment, metal coatings were deposited over the layers containing five defects with known lengths such that the defects were invisible from the surface. The limit of detection (resolution), in terms of defect size, of the GMR high-resolution Eddy Current probe was studied using this sample. Applications of Eddy Current testing include detecting defects in thin film metallic layers, and quality control of metallization layers on silicon wafers for integrated circuits manufacturing.

Performance improvement of organic thin film transistors by using active layer with sandwich structure

NASA Astrophysics Data System (ADS)

Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

2017-08-01

We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

Dependence of millimeter wave surface resistance on the deposition parameters of laser ablated YBa2Cu3O(x) thin films

NASA Technical Reports Server (NTRS)

Wosik, J.; Robin, T.; Davis, M.; Wolfe, J. C.; Forster, K.; Deshmukh, S.; Bensaoula, A.; Sega, R.; Economou, D.; Ignatiev, A.

1990-01-01

Measurements of millimeter-wave surface resistance versus temperature have been performed for YBa2Cu3O(x) thin films on 100 line-type SrTiO(3) substrates using a TE(011) cylindrical copper cavity at 80 GHz. The 0.6-micron thick films were grown at several deposition temperatures in the range 690 C to 810 C by means of a pulsed excimer laser ablation technique. A surface resistance minimum (60 milliohm at 77 K) near 770 C is shown to correlate with a minimum in c-axis lattice parameter (11.72 A). The highest value of Tc also occurs near this temperature. The surface resistance of films deposited at 790 C on 110 line-type LaAlO3 subtrates is lower, reaching 8 milliohm at 98 GHz and 80 K, demonstrating the influence of substate material on film quality.

Low-Temperature Atomic Layer Deposition of CuSbS2 for Thin-Film Photovoltaics.

PubMed

Riha, Shannon C; Koegel, Alexandra A; Emery, Jonathan D; Pellin, Michael J; Martinson, Alex B F

2017-02-08

Copper antimony sulfide (CuSbS 2 ) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (∼1.5 eV), large absorption coefficient (>10 4 cm -1 ), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) postprocess anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm -1 , as well as a hole concentration of 10 15 cm -3 . Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2 /CdS heterojunction PV devices. While far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.

Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

NASA Astrophysics Data System (ADS)

Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

2017-10-01

Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

Ballistic Deposition of Nanoclusters.

NASA Astrophysics Data System (ADS)

Ulbrandt, Jeffrey; Li, Yang; Headrick, Randall

Nanoporous thin-films are an important class of materials, possessing a large surface area to volume ratio, with applications ranging from thermoelectric and photovoltaic materials to supercapacitors. In-Situ X-ray Reflectivity and Grazing Incidence Small Angle X-Ray Scattering (GISAXS) were used to monitor thin-films grown from Tungsten Silicide (WSi2) and Copper (Cu) nanoclusters. The nanoclusters ranged in size from 2 nm to 6 nm diameter and were made by high-pressure magnetron sputtering via plasma gas condensation (PGC). X-Ray Reflectivity (XRR) measurements of the films at various stages of growth reveal that the resulting films exhibit very low density, approaching 15% of bulk density. This is consistent with a simple off-lattice ballistic deposition model where particles stick at the point of first contact without further restructuring. DOE Office of Basic Energy Sciences under contract DE-FG02-07ER46380.

How the masters in Umbria, Italy, generated and used nanoparticles in art fabrication during the Renaissance period

NASA Astrophysics Data System (ADS)

Padeletti, G.; Fermo, P.

Lustre was one of the most sophisticated techniques for the decoration of majolicas during the Renaissance period. Lustre consists of a thin metallic film containing silver, copper and other substances like iron oxide and cinnabar applied in a reducing atmosphere on a previously glazed ceramic. In this way, beautiful iridescent reflections of different colours (in particular gold and ruby-red) are obtained. The characterisation and the study of lustre-decorated majolicas is of great interest for archaeologists, but also offers possibilities for producing pottery with outstanding decoration today, following ancient examples, since nowadays Italian artisans are interested in the reproduction of the ancient recipes and procedures. Moreover, it can even suggest new procedures for obtaining uniform thin metallic films for technological applications. A study has been carried out on ancient lustre layers using numerous different analytical techniques such as XRD, SEM-EDX, TEM-EDX-SAED, ETAAS, ICP-OES, UV-vis reflectance spectroscopy and SAXS. Lustre films were shown to be formed by copper and silver clusters of nanometric dimension. The colour and the properties of the lustre films depend on the elemental composition of the impasto applied to the ceramic surface as well as on other factors like the metallic nanocluster dimension, the firing conditions, the underlying glaze composition and the procedure used.

Surface modifications of chalcopyrite CuInS2 thin films for photochatodes in photoelectrochemical water splitting under sunlight irradiation

NASA Astrophysics Data System (ADS)

Gunawan; Haris, A.; Widiyandari, H.; Septina, W.; Ikeda, S.

2017-02-01

Copper chalcopyrite semiconductors include a wide range of compounds that are of interest for photoelectrochemical water splitting which enables them to be used as photochatodes for H2 generation. Among them, CuInS2 is one of the most important materials due to its optimum band gap energy for sunlight absorption. In the present study, we investigated the application of CuInS2 fabricated by electrodeposition as photochatodes for water splitting. Thin film of CuInS2 chalcopyrite was formed on Mo-coated glass substrate by stacked electrodeposition of copper and indium followed by sulfurization under H2S flow. The films worked as a H2 liberation electrode under cathodic polarization from a solution containing Na2SO4 after loading Pt deposits on the film. Introduction of an n-type CdS layer by chemical bath deposition on the CuInS2 surface before the Pt loading resulted appreciable improvements of H2 liberation efficiency and a higher photocurrent onset potential. Moreover, the use of In2S3 layer as an alternative n-type layer to the CdS significantly improved the H2 liberation performance: the CuInS2 film modified with In2S3 and Pt deposits worked as an efficient photocathode for photoelectrochemical water splitting.

Study of earth abundant tco and absorber materials for photovoltaic applications

NASA Astrophysics Data System (ADS)

Prabhakar, Tejas

In order to make photovoltaic power generation a sustainable venture, it is necessary to use cost-effective materials in the manufacture of solar cells. In this regard, AZO (Aluminum doped Zinc Oxide) and CZTS (Copper Zinc Tin Sulfide) have been studied for their application in thin film solar cells. While AZO is a transparent conducting oxide, CZTS is a photovoltaic absorber. Both AZO and CZTS consist of earth abundant elements and are non-toxic in nature. Highly transparent and conductive AZO thin films were grown using RF sputtering. The influence of deposition parameters such as working pressure, RF power, substrate temperature and flow rate on the film characteristics was investigated. The as-grown films had a high degree of preferred orientation along the (002) direction which enhanced at lower working pressures, higher RF powers and lower substrate temperatures. Williamson-Hall analysis on the films revealed that as the working pressure was increased, the nature of stress and strain gradually changed from being compressive to tensile. The fall in optical transmission of the films was a consequence of free carrier absorption resulting from enhanced carrier density due to incorporation of Al atoms or oxygen vacancies. The optical and electrical properties of the films were described well by the Burstein-Moss effect. CZTS absorber layers were grown using ultrasonic spray pyrolysis at a deposition temperature of 350 C and subsequently annealed in a sulfurization furnace. Measurements from XRD and Raman spectra confirmed the presence of pure single phase Cu2ZnSnS4. Texture analysis of as-deposited and annealed CZTS films indicated that the (112) plane which is characteristic of the kesterite phase was preferred. The grain size increased from 50 nm to 100 nm on conducting post-deposition annealing. CZTS films with stoichiometric composition yielded a band gap of 1.5 eV, which is optimal for solar energy conversion. The variation of tin in the film changed its resistivity by several orders of magnitude and subsequently the tin free ternary chalcogenide Cu2ZnS2 having very low resistivity was obtained. By carefully optimization of concentrations of tin, zinc and copper, a zinc-rich/tin-rich/copper-poor composition was found to be most suitable for solar cell applications. Etching of CZTS films using KCN solution reduced their resistivity, possibly due to the elimination of binary copper sulfide phases. CZTS solar cells were fabricated both in the substrate and superstrate configurations.

Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

2018-04-01

In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

PubMed

Hu, Shiben; Fang, Zhiqiang; Ning, Honglong; Tao, Ruiqiang; Liu, Xianzhe; Zeng, Yong; Yao, Rihui; Huang, Fuxiang; Li, Zhengcao; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao

2016-07-27

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V - 1 ·s - 1 a turn-on voltage of -0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

PubMed Central

Hu, Shiben; Fang, Zhiqiang; Ning, Honglong; Tao, Ruiqiang; Liu, Xianzhe; Zeng, Yong; Yao, Rihui; Huang, Fuxiang; Li, Zhengcao; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao

2016-01-01

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm2·V−1·s−1 a turn-on voltage of −0.8 V and a low subthreshold swing of 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering and reduce the copper diffusion paths by making film denser. Due to the interaction of Cr with a-IGZO, the carrier concentration of a-IGZO, which is responsible for high mobility, rises. PMID:28773743

Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits

NASA Astrophysics Data System (ADS)

Petti, Luisa; Pattanasattayavong, Pichaya; Lin, Yen-Hung; Münzenrieder, Niko; Cantarella, Giuseppe; Yaacobi-Gross, Nir; Yan, Feng; Tröster, Gerhard; Anthopoulos, Thomas D.

2017-03-01

We report on low operating voltage thin-film transistors (TFTs) and integrated inverters based on copper(I) thiocyanate (CuSCN) layers processed from solution at low temperature on free-standing plastic foils. As-fabricated coplanar bottom-gate and staggered top-gate TFTs exhibit hole-transporting characteristics with average mobility values of 0.0016 cm2 V-1 s-1 and 0.013 cm2 V-1 s-1, respectively, current on/off ratio in the range 102-104, and maximum operating voltages between -3.5 and -10 V, depending on the gate dielectric employed. The promising TFT characteristics enable fabrication of unipolar NOT gates on flexible free-standing plastic substrates with voltage gain of 3.4 at voltages as low as -3.5 V. Importantly, discrete CuSCN transistors and integrated logic inverters remain fully functional even when mechanically bent to a tensile radius of 4 mm, demonstrating the potential of the technology for flexible electronics.

Multilayered Electromagnetic Interference Shielding Structures for Suppressing Magnetic Field Coupling

NASA Astrophysics Data System (ADS)

Watanabe, Atom O.; Raj, Pulugurtha Markondeya; Wong, Denny; Mullapudi, Ravi; Tummala, Rao

2018-05-01

Control of electromagnetic interference (EMI) represents a major challenge for emerging consumer electronics, the Internet of Things, automotive electronics, and wireless communication systems. This paper discusses innovative EMI shielding materials and structures that offer higher shielding effectiveness compared with copper. To create high shielding effectiveness in the frequency range of 1 MHz to 100 MHz, multilayered shielding topologies with electrically conductive and nanomagnetic materials were modeled, designed, fabricated, and characterized. In addition, suppression of out-of-plane and in-plane magnetic-field coupling noise with these structures is compared with that of traditional single-layer copper or nickel-iron films. Compared with single-layered copper shields, multilayered structures consisting of copper, nickel-iron, and titanium showed a 3.9 times increase in shielding effectiveness in suppressing out-of-plane or vertically coupled noise and 1.3 times increase in lateral coupling. The superiority of multilayered thin-film shields over conventional shielding enables greater design flexibility, higher shielding effectiveness, and further miniaturization of emerging radiofrequency (RF) and power modules.

Research Update: Emerging chalcostibite absorbers for thin-film solar cells

DOE PAGES

de Souza Lucas, Francisco Willian; Zakutayev, Andriy

2018-06-04

Copper antimony chalcogenides CuSbCh 2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interesting optoelectronic properties for applications in photovoltaic (PV) devices. This research update describes the CuSbCh 2 crystallographic structures, synthesis methods, competing phases, band structures, optoelectronic properties, point defects, carrier dynamics, and interface band offsets, based on experimental and theoretical data. Correlations between these absorber properties and PV device performance are discussed, and opportunities for further increase in the efficiency of the chalcostibite PV devices are highlighted.

Research Update: Emerging chalcostibite absorbers for thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

de Souza Lucas, Francisco Willian; Zakutayev, Andriy

Copper antimony chalcogenides CuSbCh 2 (Ch=S, Se) are an emerging family of absorbers studied for thin-film solar cells. These non-toxic and Earth-abundant materials show a layered low-dimensional chalcostibite crystal structure, leading to interesting optoelectronic properties for applications in photovoltaic (PV) devices. This research update describes the CuSbCh 2 crystallographic structures, synthesis methods, competing phases, band structures, optoelectronic properties, point defects, carrier dynamics, and interface band offsets, based on experimental and theoretical data. Correlations between these absorber properties and PV device performance are discussed, and opportunities for further increase in the efficiency of the chalcostibite PV devices are highlighted.

Real-time observation of Cu2ZnSn(S,Se)4 solar cell absorber layer formation from nanoparticle precursors.

PubMed

Mainz, Roland; Walker, Bryce C; Schmidt, Sebastian S; Zander, Ole; Weber, Alfons; Rodriguez-Alvarez, Humberto; Just, Justus; Klaus, Manuela; Agrawal, Rakesh; Unold, Thomas

2013-11-07

The selenization of Cu-Zn-Sn-S nanocrystals is a promising route for the fabrication of low-cost thin film solar cells. However, the reaction pathway of this process is not completely understood. Here, the evolution of phase formation, grain size, and elemental distributions is investigated during the selenization of Cu-Zn-Sn-S nanoparticle precursor thin films by synchrotron-based in situ energy-dispersive X-ray diffraction and fluorescence analysis as well as by ex situ electron microscopy. The precursor films are heated in a closed volume inside a vacuum chamber in the presence of selenium vapor while diffraction and fluorescence signals are recorded. The presented results reveal that during the selenization the cations diffuse to the surface to form large grains on top of the nanoparticle layer and the selenization of the film takes place through two simultaneous reactions: (1) a direct and fast formation of large grained selenides, starting with copper selenide which is subsequently transformed into Cu2ZnSnSe4; and (2) a slower selenization of the remaining nanoparticles. As a consequence of the initial formation of copper selenides at the surface, the subsequent formation of CZTSe starts under Cu-rich conditions despite an overall Cu-poor composition of the film. The implications of this process path for the film quality are discussed. Additionally, the proposed growth model provides an explanation for the previously observed accumulation of carbon from the nanoparticle precursor beneath the large grained layer.

Enhancement of nonlinear optical susceptibility of CuPc films by ITO layer

NASA Astrophysics Data System (ADS)

Ganesh, V.; Zahran, H. Y.; Yahia, I. S.; Shkir, Mohd; AlFaify, S.

2016-12-01

In the present study, the Copper Phthalocyanine (CuPc)/ITO thin film was fabricated using thermal evaporation method. The structural property was analyzed by X-ray diffraction study and confirms that the thin film has been preferentially grown along (200) plane. The atomic force microscope study was carried out on deposited film and quality of thin films is assessed by calculating the roughness of the films. The direct and indirect band gap, linear and nonlinear optical characteristics of grown films were calculated by using UV-Vis-NIR spectrometer studies. The calculated values of the first direct and indirect band gaps (Eg1(d) &Eg1(ind)) are 1.879 and 1.644 eV as a fundamental gap, while the values of second direct and indirect band gap (Eg2(d) &Eg2(ind)) are 1.660 and 1.498 eV as an onset gap for CuPc. The values of nonlinear refractive index (n2) and third order nonlinear optical susceptibility (χ3) are found to be 5 × 10-8 and 8 × 10-9 (theoretical) and 5.2 × 10-8 and 1.56 × 10-7 (experimental) respectively. The optical band and third order nonlinear properties suggest that the as-prepared films are may be applied in optoelectronic and nonlinear applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nehm, F., E-mail: frederik.nehm@iapp.de; Müller-Meskamp, L.; Klumbies, H.

A major failure mechanism is identified in electrical calcium corrosion tests for quality assessment of high-end application moisture barriers. Accelerated calcium corrosion is found at the calcium/electrode junction, leading to an electrical bottleneck. This causes test failure not related to overall calcium loss. The likely cause is a difference in electrochemical potential between the aluminum electrodes and the calcium sensor, resulting in a corrosion element. As a solution, a thin, full-area copper layer is introduced below the calcium, shifting the corrosion element to the calcium/copper junction and inhibiting bottleneck degradation. Using the copper layer improves the level of sensitivity formore » the water vapor transmission rate (WVTR) by over one order of magnitude. Thin-film encapsulated samples with 20 nm of atomic layer deposited alumina barriers this way exhibit WVTRs of 6 × 10{sup −5} g(H{sub 2}O)/m{sup 2}/d at 38 °C, 90% relative humidity.« less

Workshop proceedings: Photovoltaic conversion of solar energy for terrestrial applications. Volume 2: Invited papers

NASA Technical Reports Server (NTRS)

1973-01-01

A photovoltaic device development plan is reported that considers technological as well as economical aspects of single crystal silicon, polycrystal silicon, cadmium sulfide/copper sulfide thin films, as well as other materials and devices for solar cell energy conversion systems.

Comparison of interaction mechanisms of copper phthalocyanine and nickel phthalocyanine thin films with chemical vapours

NASA Astrophysics Data System (ADS)

Ridhi, R.; Singh, Sukhdeep; Saini, G. S. S.; Tripathi, S. K.

2018-04-01

The present study deals with comparing interaction mechanisms of copper phthalocyanine and nickel phthalocyanine with versatile chemical vapours: reducing, stable aromatic and oxidizing vapours namely; diethylamine, benzene and bromine. The variation in electrical current of phthalocyanines with exposure of chemical vapours is used as the detection parameter for studying interaction behaviour. Nickel phthalocyanine is found to exhibit anomalous behaviour after exposure of reducing vapour diethylamine due to alteration in its spectroscopic transitions and magnetic states. The observed sensitivities of copper phthalocyanine and nickel phthalcyanine films are different in spite of their similar bond numbers, indicating significant role of central metal atom in interaction mechanism. The variations in electronic transition levels after vapours exposure, studied using UV-Visible spectroscopy confirmed our electrical sensing results. Bromine exposure leads to significant changes in vibrational bands of metal phthalocyanines as compared to other vapours.

Influence of support electrolytic in the electrodeposition of CuGaSe thin films

DOE PAGES

Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.; ...

2016-11-02

CuGaSe 2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Because of its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions mustmore » be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. Here, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe 2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. Finally, we present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.« less

Influence of support electrolytic in the electrodeposition of Cusbnd Gasbnd Se thin films

NASA Astrophysics Data System (ADS)

Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.; Deutsch, T. G.

2017-01-01

CuGaSe2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Due to its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions must be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. In this paper, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. We also present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.

Influence of support electrolytic in the electrodeposition of CuGaSe thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, A. M.; Turner, J. A.; Lara-Lara, B.

CuGaSe 2 is an important thin film electronic material that possesses several attributes that make it appealing for solar energy conversion. Because of its properties it can be incorporated in to various devices, among the greatest highlights are photovoltaic cells, as well as its potential use as photocathodes for hydrogen production, via the photoelectrolysis. There are several methods of its preparation, most notably electrodeposition that has the potential for large areas and high volumes. Electrodeposition of ternary and/or quaternary semiconductors generally proceeds via the formation of a binary, which is subsequently reacted to form the ternary compound. Several conditions mustmore » be controlled to form binary compounds that include the use of complexing agents, buffers, temperature, etc. Here, we discuss the effect of anion composition in the electrolytic bath and the type of lithium salts, in order to manipulate the atomic concentration of CuGaSe 2 during the electrodeposition of thin films, yielding copper-rich, gallium-rich or stoichiometric thin films. Finally, we present the results of a study on the morphology and structure obtained using two types of substrates both before and after performing a heat treatment.« less

Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film

NASA Astrophysics Data System (ADS)

Ali, N. I. Mohd; Misran, N.; Mansor, M. F.; Jamlos, M. F.

2017-05-01

This paper presents the analysis of 28GHz solar patch antenna using the variations of transparent conductive oxides (TCO) thin film as the radiating patch. Solar antenna is basically combining the function of antenna and solar cell into one device and helps to maximize the usage of surface area. The main problem of the existing solar antenna is the radiating patch which made of nontransparent material, such as copper, shadowing the solar cell and degrades the total solar efficiency. Hence, by using the transparent conductive oxides (TCO) thin film as the radiating patch, this problem can be tackled. The TCO thin film used is varied to ITO, FTO, AgHT-4, and AgHT-8 along with glass as substrate. The simulation of the antenna executed by using Computer Simulation Technology (CST) Microwave Studio software demonstrated at 28 GHz operating frequency for 5G band applications. The performance of the transparent antennas is compared with each other and also with the nontransparent patch antenna that using Rogers RT5880 as substrate, operating at the same resonance frequency and then, the material that gives the best performance is identified.

Fabrication of Meso-Porous Sintered Metal Thin Films by Selective Etching of Silica Based Sacrificial Template

PubMed Central

Dumée, Ludovic F.; She, Fenghua; Duke, Mikel; Gray, Stephen; Hodgson, Peter; Kong, Lingxue

2014-01-01

Meso-porous metal materials have enhanced surface energies offering unique surface properties with potential applications in chemical catalysis, molecular sensing and selective separation. In this paper, commercial 20 nm diameter metal nano-particles, including silver and copper were blended with 7 nm silica nano-particles by shear mixing. The resulted powders were cold-sintered to form dense, hybrid thin films. The sacrificial silica template was then removed by selective etching in 12 wt% hydrofluoric acid solutions for 15 min to reveal a purely metallic meso-porous thin film material. The impact of the initial silica nano-particle diameter (7–20 nm) as well as the sintering pressure (5–20 ton·m−2) and etching conditions on the morphology and properties of the final nano-porous thin films were investigated by porometry, pyknometery, gas and liquid permeation and electron microscopy. Furthermore, the morphology of the pores and particle aggregation during shear mixing were assessed through cross-sectioning by focus ion beam milling. It is demonstrated that meso-pores ranging between 50 and 320 nm in average diameter and porosities up to 47% can be successfully formed for the range of materials tested. PMID:28344241

The Effect of Interface Cracks on the Electrical Performance of Solar Cells

NASA Astrophysics Data System (ADS)

Kim, Hansung; Tofail, Md. Towfiq; John, Ciby

2018-04-01

Among a variety of solar cell types, thin-film solar cells have been rigorously investigated as cost-effective and efficient solar cells. In many cases, flexible solar cells are also fabricated as thin films and undergo frequent stress due to the rolling and bending modes of applications. These frequent motions result in crack initiation and propagation (including delamination) in the thin-film solar cells, which cause degradation in efficiency. Reliability evaluation of solar cells is essential for developing a new type of solar cell. In this paper, we investigated the effect of layer delamination and grain boundary crack on 3D thin-film solar cells. We used finite element method simulation for modeling of both electrical performance and cracked structure of 3D solar cells. Through simulations, we quantitatively calculated the effect of delamination length on 3D copper indium gallium diselenide (CIGS) solar cell performance. Moreover, it was confirmed that the grain boundary of CIGS could improve the solar cell performance and that grain boundary cracks could decrease cell performance by altering the open circuit voltage. In this paper, the investigated material is a CIGS solar cell, but our method can be applied to general polycrystalline solar cells.

Effect of deposition time of sputtering Ag-Cu thin film on mechanical and antimicrobial properties

NASA Astrophysics Data System (ADS)

Purniawan, A.; Hermastuti, R.; Purwaningsih, H.; Atmono, T. M.

2018-04-01

Metallic implants are important components in biomedical treatment. However, post-surgery infection often occurs after installation of implant. The infections are usually treated by antibiotics, but it still causes several secondary problems. As a prevention treatment, the surgical instruments and implants must be in a sterile condition. This action is still not optimal too because the material still can attract the bacteria. From material science point of view, it can be anticipated by developing a type of material which has antibacterial properties or called antimicrobial material. Silver (Ag) and Copper (Cu) have antimicrobial properties to prevent the infection. In this research, the influence of deposition time of Ag-Cu thin film deposition process as antimicrobial material with Physical Vapor Deposition (PVD) RF Sputtering method was analyzed. Deposition time used were for 10, 15 and 20 minutes in Argon gas pressure around 3 x 10-2 mbar in during deposition process. The morphology and surface roughness of Ag-Cu thin film were characterized using SEM and AFM. Based on the results, the deposition time influences the quality morphology that the thin films have good homogeneity and complete structure for longer deposition time. In addition, from roughness measurement results show that increase deposition time decrease the roughness of thin film. Antimicrobial performance was analyzed using Kirby Bauer Test. The results show that all of sample have good antimicrobial inhibition. Adhesion quality was evaluated using Rockwell C Indentation Test. However, the results indicate that the Ag-Cu thin film has low adhesion strength.

Thin film strain transducer

NASA Technical Reports Server (NTRS)

Rand, J. L. (Inventor)

1984-01-01

A strain transducer system and process for making the same is disclosed. A beryllium copper ring having four strain gages is electrically connected in Wheatstone bridge fashion to the output instrumentation. Tabs are bonded to a balloon or like surface with strain on the surface causing bending of a ring which provides an electrical signal through the gages proportional to the surface strain. A photographic pattern of a one half ring segment as placed on a sheet of beryllium copper for chem-mill etch formation is illustrated.

Molecular and Electronic Structure of Thin Films of Protoporphyrin(IX)Fe(III)C1

DTIC Science & Technology

1991-11-10

Union Carbide). Electrical contact to the back side of the HOPG sample was made with a copper wire and conductive epoxy (Epo-tek H20E, Epoxy Technology...analysis of the contrast in STM images of copper phthalocyanine [641 and by Zheng and Tsong in their analysis of resonant tunneling via tip-localized...Electroanal. Chem. 1980, 110, 369. 71. Makinen, M.W.; Churg A.K. Iron Porphyri ns-P art One; Lever, A.B.P.; Gray, H.B., Eds.; Physical Bioinorganic

Enhanced heat transfer using nanofluids

DOEpatents

Choi, Stephen U. S.; Eastman, Jeffrey A.

2001-01-01

This invention is directed to a method of and apparatus for enhancing heat transfer in fluids such as deionized water. ethylene glycol, or oil by dispersing nanocrystalline particles of substances such as copper, copper oxide, aluminum oxide, or the like in the fluids. Nanocrystalline particles are produced and dispersed in the fluid by heating the substance to be dispersed in a vacuum while passing a thin film of the fluid near the heated substance. The fluid is cooled to control its vapor pressure.

In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

NASA Technical Reports Server (NTRS)

Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

1990-01-01

Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

NASA Technical Reports Server (NTRS)

Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P. E.; Kear, B.; Gallois, B.

1991-01-01

Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wu, Qinke; Jung, Seong Jun; Jang, Sung Kyu; Lee, Joohyun; Jeon, Insu; Suh, Hwansoo; Kim, Yong Ho; Lee, Young Hee; Lee, Sungjoo; Song, Young Jae

2015-06-01

We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications. Electronic supplementary information (ESI) available: The growth conditions, statistical studies of OM images and high-resolution STM/TEM measurements for multi-/bi-layered graphene are discussed in detail. See DOI: 10.1039/c5nr02716k

Bipolar charge storage characteristics in copper and cobalt co-doped zinc oxide (ZnO) thin film.

PubMed

Kumar, Amit; Herng, Tun Seng; Zeng, Kaiyang; Ding, Jun

2012-10-24

The bipolar charge phenomenon in Cu and Co co-doped zinc oxide (ZnO) film samples has been studied using scanning probe microscopy (SPM) techniques. Those ZnO samples are made using a pulsed laser deposition (PLD) technique. It is found that the addition of Cu and Co dopants suppresses the electron density in ZnO and causes a significant change in the work function (Fermi level) value of the ZnO film; this results in the ohmic nature of the contact between the electrode (probe tip) and codoped sample, whereas this contact exhibits a Schottky nature in the undoped and single-element-doped samples. These results are verified by Kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) measurements. It is also found that the co-doping (Cu and Co) can stabilize the bipolar charge, whereas Cu doping only stabilizes the positive charge in ZnO thin films.

Low-temperature atomic layer deposition of CuSbS 2 for thin-film photovoltaics

DOE PAGES

Riha, Shannon C.; Koegel, Alexandra A.; Emery, Jonathan D.; ...

2017-01-24

Copper antimony sulfide (CuSbS 2) has been gaining traction as an earth-abundant absorber for thin-film photovoltaics given its near ideal band gap for solar energy conversion (~1.5 eV), large absorption coefficient (>10 4 cm –1), and elemental abundance. Through careful in situ analysis of the deposition conditions, a low-temperature route to CuSbS 2 thin films via atomic layer deposition has been developed. After a short (15 min) post process anneal at 225 °C, the ALD-grown CuSbS 2 films were crystalline with micron-sized grains, exhibited a band gap of 1.6 eV and an absorption coefficient >10 4 cm –1, as wellmore » as a hole concentration of 10 15 cm –3. Finally, the ALD-grown CuSbS 2 films were paired with ALD-grown TiO 2 to form a photovoltaic device. This photovoltaic device architecture represents one of a very limited number of Cd-free CuSbS 2 PV device stacks reported to date, and it is the first to demonstrate an open-circuit voltage on par with CuSbS 2/CdS heterojunction PV devices. As a result, while far from optimized, this work demonstrates the potential for ALD-grown CuSbS 2 thin films in environmentally benign photovoltaics.« less

Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beebe, Melissa R., E-mail: mrbeebe@email.wm.edu; Beringer, Douglas B.; Burton, Matthew C.

2016-03-15

The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films tomore » exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.« less

Workshop proceedings: Photovoltaic conversion of solar energy for terrestrial applications. Volume 1: Working group and panel reports

NASA Technical Reports Server (NTRS)

1973-01-01

Technological aspects of solar energy conversion by photovoltaic cells are considered. The advantage of the single crystal silicon solar cell approach is developed through comparisons with polycrystalline silicon, cadmium sulfide/copper sulfide thin film cells, and other materials and devices.

Graphene: corrosion-inhibiting coating.

PubMed

Prasai, Dhiraj; Tuberquia, Juan Carlos; Harl, Robert R; Jennings, G Kane; Rogers, Bridget R; Bolotin, Kirill I

2012-02-28

We report the use of atomically thin layers of graphene as a protective coating that inhibits corrosion of underlying metals. Here, we employ electrochemical methods to study the corrosion inhibition of copper and nickel by either growing graphene on these metals, or by mechanically transferring multilayer graphene onto them. Cyclic voltammetry measurements reveal that the graphene coating effectively suppresses metal oxidation and oxygen reduction. Electrochemical impedance spectroscopy measurements suggest that while graphene itself is not damaged, the metal under it is corroded at cracks in the graphene film. Finally, we use Tafel analysis to quantify the corrosion rates of samples with and without graphene coatings. These results indicate that copper films coated with graphene grown via chemical vapor deposition are corroded 7 times slower in an aerated Na(2)SO(4) solution as compared to the corrosion rate of bare copper. Tafel analysis reveals that nickel with a multilayer graphene film grown on it corrodes 20 times slower while nickel surfaces coated with four layers of mechanically transferred graphene corrode 4 times slower than bare nickel. These findings establish graphene as the thinnest known corrosion-protecting coating.

Electrical Nanocontact Between Bismuth Nanowire Edges and Electrodes

NASA Astrophysics Data System (ADS)

Murata, Masayuki; Nakamura, Daiki; Hasegawa, Yasuhiro; Komine, Takashi; Uematsu, Daisuke; Nakamura, Shinichiro; Taguchi, Takashi

2010-09-01

Three methods for attaching electrodes to a bismuth nanowire sample were investigated. In the first and second methods, thin layers of titanium and copper were deposited by ion plating under vacuum onto the edge surface of individual bismuth nanowire samples that were encapsulated in a quartz template. Good electrical contact between the electrodes and the nanowire was achieved using silver epoxy and conventional solder on the thin-film layers in the first and second methods, respectively. In the third method, a low-melting-point solder was utilized and was also successful in achieving good electrical contact in air atmosphere. The connection methods showed no difference in terms of resistivity temperature dependence or Seebeck coefficient. The third method has an advantage in that nanocontact is easily achieved; however, diffusion of the solder into the nanowire allows contamination near the melting point of the solder. In the first and second methods, the thin-film layer enabled electrical contact to be more safely achieved than the direct contact used in the third method, because the thin-film layer prevented diffusion of binder components.

Photoluminescence spectra of thin films of ZnTPP–C{sub 60} and CuTPP–C{sub 60} molecular complexes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elistratova, M. A., E-mail: marina.elistratova@mail.ioffe.ru; Zakharova, I. B.; Romanov, N. M.

2016-09-15

The results of studies of thin composite films of zinc and copper tetraphenylporphyrins with different fractions of fullerene C{sub 60} are reported. The photoluminescence spectra are recorded, and the composition and surface morphology are analyzed by means of scanning electron microscopy. The results show a difference in the structure of films with two types of metals (Zn, Cu) entering into the complex of the porphyrin macrocycle. An additional long-wavelength photoluminescence band at 1.4 eV is detected for the first time, which is evidence of the formation of ZnTPP–C{sub 60} molecular complexes from a gas-dynamic vapor flow upon condensation. In CuTPPmore » thin films, the processes of self-assembly into nanowires 20 nm in diameter and up to 50 µm in length and the formation of nanoheterojunctions upon the addition of fullerene C{sub 60} are observed. Quantum-chemical calculations in the context of density-functional theory are carried out to interpret the experimental data.« less

Non-enzymatic glucose sensing on copper-nickel thin film alloy

NASA Astrophysics Data System (ADS)

Pötzelberger, Isabella; Mardare, Andrei Ionut; Hassel, Achim Walter

2017-09-01

A simple and cost efficient glucose sensor was constructed using 3D printing having as active material a copper-15 at.% nickel thin film thermally co-evaporated on copper plated circuit boards. The glucose detection in alkaline solution was studied in detail by cyclic voltammetric and chronoamperometric measurements. The sensor suitability for being used in both quantitative and qualitative glucose detection was demonstrated and calibration of its response to various amounts of glucose revealed two linear regimes with different sensitivities. Glucose levels between 0 and 10 mM are most efficiently quantified as indicated by an amperometric signal increase of 240 μA cm-2 for each 1 mM increase of glucose concentration. The potentiostatic stability of the sensor was evaluated and its complete insensitivity after 7 h was solely attributed to the irreversible transformation of glucose into gluconolactone. A sensor life time of 20 cycles was demonstrated during potentiodynamic cycling when the sensor response remains constant at its maximum level. The magnitude of possible glucose quantification errors were evaluated as interferences induced by additions of ascorbic and uric acids. A worst case scenario of 96 % accuracy of glucose levels quantification was demonstrated using 25 times higher concentrations of interfering substances as compared to the glucose level.

Super-hard cubic BN layer formation by nitrogen ion implantation

NASA Astrophysics Data System (ADS)

Komarov, F. F.; Pilko, V. V.; Yakushev, V. A.; Tishkov, V. S.

1994-11-01

Microcrystalline and amorphous boron thin films were implanted with nitrogen ions at energies from 25 to 125 keV and with doses from 2 × 10 17 to 1 × 10 18 at.cm 2 at temperatures below 200°C. The structure of boron nitride phases after ion implantation, formation of phases and phase transformations were investigated by TEM and TED methods. The cubic boron nitride phase is revealed. The microhardness of the formed films was satisfactorily explained in terms of chemical compound formation by polyenergetic ion implantation. The influence of the copper impurity on the formation of the cubic boron nitride phase is demonstrated. It has also been shown that low concentrations of copper promote cubic BN boundary formation.

De-vitrification of nanoscale phase-separated amorphous thin films in the immiscible copper-niobium system

NASA Astrophysics Data System (ADS)

Puthucode, A.; Devaraj, A.; Nag, S.; Bose, S.; Ayyub, P.; Kaufman, M. J.; Banerjee, R.

2014-05-01

Copper and niobium are mutually immiscible in the solid state and exhibit a large positive enthalpy of mixing in the liquid state. Using vapour quenching via magnetron co-sputter deposition, far-from equilibrium amorphous Cu-Nb films have been deposited which exhibit a nanoscale phase separation. Annealing these amorphous films at low temperatures (~200 °C) initiates crystallization via the nucleation and growth of primary nanocrystals of a face-centred cubic Cu-rich phase separated by the amorphous matrix. Interestingly, subsequent annealing at a higher temperature (>300 °C) leads to the polymorphic nucleation and growth of large spherulitic grains of a body-centred cubic Nb-rich phase within the retained amorphous matrix of the partially crystallized film. This sequential two-stage crystallization process has been investigated in detail by combining transmission electron microscopy [TEM] (including high-resolution TEM) and atom probe tomography studies. These results provide new insights into the crystallization behaviour of such unusual far-from equilibrium phase-separated metallic glasses in immiscible systems.

Self-powered thin-film motion vector sensor

PubMed Central

Jing, Qingshen; Xie, Yannan; Zhu, Guang; Han, Ray P. S.; Wang, Zhong Lin

2015-01-01

Harnessing random micromeso-scale ambient energy is not only clean and sustainable, but it also enables self-powered sensors and devices to be realized. Here we report a robust and self-powered kinematic vector sensor fabricated using highly pliable organic films that can be bent to spread over curved and uneven surfaces. The device derives its operational energy from a close-proximity triboelectrification of two surfaces: a polytetrafluoroethylene film coated with a two-column array of copper electrodes that constitutes the mover and a polyimide film with the top and bottom surfaces coated with a two-column aligned array of copper electrodes that comprises the stator. During relative reciprocations, the electrodes in the mover generate electric signals of ±5 V to attain a peak power density of ≥65 mW m−2 at a speed of 0.3 ms−1. From our 86,000 sliding motion tests of kinematic measurements, the sensor exhibits excellent stability, repeatability and strong signal durability. PMID:26271603

Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

NASA Technical Reports Server (NTRS)

Levy, Moises; Sarma, Bimal K.

1994-01-01

Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

Thermal properties and dynamic mechanical properties of ceramic fillers filled epoxy composites

NASA Astrophysics Data System (ADS)

Saidina, D. S.; Mariatti, M.; Juliewatty, J.

2015-07-01

This present study is aimed to enhance the thermal and dynamic mechanical properties of ceramic fillers such as Calcium Copper Titanate, CaCu3Ti4O12 (CCTO) and Barium Titanate (BaTiO3) filled epoxy thin film composites. As can be seen from the results, 20 vol% BaTiO3/epoxy thin film composite showed the lowest coefficient of thermal expansion (CTE) value, the highest decomposition temperature (T5 and Tonset) and weight of residue among the composites as the filler has low CTE value, distributed homogeneously throughout the composite and less voids can be seen between epoxy resin and BaTiO3 filler.

Sulvanite (Cu 3VS 4) nanocrystals for printable thin film photovoltaics

DOE PAGES

Chen, Ching -Chin; Stone, Kevin H.; Lai, Cheng -Yu; ...

2017-09-21

Copper Vanadium Sulfide (Cu 3VS 4), also known as sulvanite, has recently emerged as a suitable absorber material for thin film photovoltaics. The synthesis of Cu 3VS 4 nanocrystals via a rapid solvothermal route is reported for the first time. The phase purity of the Cu 3VS 4 nanocrystals has been confirmed by X-ray powder diffraction (XRD) and Raman spectroscopy, while the nanoparticle size, of about 10 nm, was evaluated by transmission electron microscopy (TEM). Successful ligand exchange with sulfide, an inorganic ligand, demonstrated that the nanoparticles are amenable to surface modifications, key element in solution processing. Further annealing ofmore » as-synthesized nanocrystals under a sulfur/argon atmosphere at 600 °C, rendered highly crystalline Cu 3VS 4 powders exhibiting an impurity that could be potentially mitigated by annealing temperature optimization. Furthermore, Cu 3VS 4, formed solely from Earth-abundant elements, could provide an inexpensive, reliable approach to fabricating solution processed thin film photovoltaic absorbers.« less

Multi-Material Front Contact for 19% Thin Film Solar Cells.

PubMed

van Deelen, Joop; Tezsevin, Yasemin; Barink, Marco

2016-02-06

The trade-off between transmittance and conductivity of the front contact material poses a bottleneck for thin film solar panels. Normally, the front contact material is a metal oxide and the optimal cell configuration and panel efficiency were determined for various band gap materials, representing Cu(In,Ga)Se₂ (CIGS), CdTe and high band gap perovskites. Supplementing the metal oxide with a metallic copper grid improves the performance of the front contact and aims to increase the efficiency. Various front contact designs with and without a metallic finger grid were calculated with a variation of the transparent conductive oxide (TCO) sheet resistance, scribing area, cell length, and finger dimensions. In addition, the contact resistance and illumination power were also assessed and the optimal thin film solar panel design was determined. Adding a metallic finger grid on a TCO gives a higher solar cell efficiency and this also enables longer cell lengths. However, contact resistance between the metal and the TCO material can reduce the efficiency benefit somewhat.

An experimental investigation of localised surface plasmon resonance (LSPR) for Cu nanoparticles depending as a function of laser pulse number in Pulsed Laser Deposition

NASA Astrophysics Data System (ADS)

Gezgin, Serap Yiǧit; Kepceoǧlu, Abdullah; Kılıç, Hamdi Şükür

2017-02-01

Copper is a low cost metal and its nanoparticles have a unique optical properties such as LSPR. The location of LSPR wavelength can be tuned by controlling nanoparticles sizes and size distributions of nanoparticles, shapes and interparticle distances. This morphological changes are provided by controlling system parameters in PLD. For this work, 48000 and 36000 laser pulses from Nd:YAG laser were applied to produce Cu nanoparticle thin films. These thin films were characterised by performing UV-VIS absorption spectroscopy, Atomic Force Microscopy (AFM) analysis. When the number of laser pulse decreases, the size of Cu nanoparticles and the number of nanoparticles arriving on the substrate are reduced, and LSPR peak of thin films are red shifted depending on the geometrical shapes of the Cu nanoparticles. We have driven a conclusion in this work that LSPR properties of Cu nanoparticles can be tuned by proposed method.

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film.

PubMed

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

2015-12-21

Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

NASA Astrophysics Data System (ADS)

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian; Zhong, Ren; Wang, Xinsheng; Tsang, Yuen Hong; Chai, Yang

2015-12-01

Two-dimensional MoS2 is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS2. In this work, we investigate the controllable growth of monolayer MoS2 evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS2, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS2 larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS2 assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS2 from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Incorporation of layered double nanomaterials in thin film nanocomposite nanofiltration membrane for magnesium sulphate removal

NASA Astrophysics Data System (ADS)

Hanis Tajuddin, Muhammad; Yusof, Norhaniza; Salleh, Wan Norharyati Wan; Fauzi Ismail, Ahmad; Hanis Hayati Hairom, Nur; Misdan, Nurasyikin

2018-03-01

Thin film nanocomposite (TFN) membrane with copper-aluminium layered double hydroxides (LDH) incorporated into polyamide (PA) selective layer has been prepared for magnesium sulphate salt removal. 0, 0.05, 0.1, 0.15, 0.2 wt% of LDH were dispersed in the trimesoyl chloride (TMC) in n-hexane as organic solution and embedded into PA layer during interfacial polymerization with piperazine. The fabricated membranes were further characterized to evaluate its morphological structure and membrane surface hydrophilicity. The TFN membranes performance were evaluated with divalent salt magnesium sulphate (MgSO4) removal and compared with thin film composite (TFC). The morphological structures of TFN membranes were altered and the surface hydrophilicity were enhanced with addition of LDH. Incorporation of LDH has improved the permeate water flux by 82.5% compared to that of TFC membrane with satisfactory rejection of MgSO4. This study has experimentally validated the potential of LDH to improve the divalent salt separation performance for TFN membranes.

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

NASA Astrophysics Data System (ADS)

Li, Yi; Liu, Qi; Cai, Jing; Li, Yun; Shi, Yi; Wang, Xizhang; Hu, Zheng

2014-06-01

This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from -20.4 V to -0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.

Sulvanite (Cu 3VS 4) nanocrystals for printable thin film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Ching -Chin; Stone, Kevin H.; Lai, Cheng -Yu

Copper Vanadium Sulfide (Cu 3VS 4), also known as sulvanite, has recently emerged as a suitable absorber material for thin film photovoltaics. The synthesis of Cu 3VS 4 nanocrystals via a rapid solvothermal route is reported for the first time. The phase purity of the Cu 3VS 4 nanocrystals has been confirmed by X-ray powder diffraction (XRD) and Raman spectroscopy, while the nanoparticle size, of about 10 nm, was evaluated by transmission electron microscopy (TEM). Successful ligand exchange with sulfide, an inorganic ligand, demonstrated that the nanoparticles are amenable to surface modifications, key element in solution processing. Further annealing ofmore » as-synthesized nanocrystals under a sulfur/argon atmosphere at 600 °C, rendered highly crystalline Cu 3VS 4 powders exhibiting an impurity that could be potentially mitigated by annealing temperature optimization. Furthermore, Cu 3VS 4, formed solely from Earth-abundant elements, could provide an inexpensive, reliable approach to fabricating solution processed thin film photovoltaic absorbers.« less

Influences of magnetic field on the fractal morphology in copper electrodeposition

NASA Astrophysics Data System (ADS)

Sudibyo; How, M. B.; Aziz, N.

2018-01-01

Copper magneto-electrodeposition (MED) is used decrease roughening in the copper electrodeposition process. This technology plays a vital role in electrodeposition process to synthesize metal alloy, thin film, multilayer, nanowires, multilayer nanowires, dot array and nano contacts. The effects of magnetic fields on copper electrodeposition are investigated in terms of variations in the magnetic field strength and the electrolyte concentration. Based on the experimental results, the mere presence of magnetic field would result in a compact deposit. As the magnetic field strength is increased, the deposit grows denser. The increment in concentration also leads to the increase the deposited size. The SEM image analysis showed that the magnetic field has a significant effect on the surface morphology of electrodeposits.

An examination of the challenges influencing science instruction in Florida elementary classrooms

NASA Astrophysics Data System (ADS)

North, Stephanie Gwinn

It has been shown that the mechanical properties of thin films tend to differ from their bulk counterparts. Specifically, the bulge and microtensile testing of thin films used in MEMS have revealed that these films demonstrate an inverse relationship between thickness and strength. A film dimension is not a material property, but it evidently does affect the mechanical performance of materials at very small thicknesses. A hypothetical explanation for this phenomenon is that as the thickness dimension of the film decreases, it is statistically less likely that imperfections exist in the material. It would require a very small thickness (or volume) to limit imperfections in a material, which is why this phenomenon is seen in films with thicknesses on the order of 100 nm to a few microns. Another hypothesized explanation is that the surface tension that exists in bulk material also exists in thin films but has a greater impact at such a small scale. The goal of this research is to identify a theoretical prediction of the strength of thin films based on its microstructural properties such as grain size and film thickness. This would minimize the need for expensive and complicated tests such as the bulge and microtensile tests. In this research, data was collected from the bulge and microtensile testing of copper, aluminum, gold, and polysilicon free-standing thin films. Statistical testing of this data revealed a definitive inverse relationship between thickness and strength, as well as between grain size and strength, as expected. However, due to a lack of a standardized method for either test, there were significant variations in the data. This research compares and analyzes the methods used by other researchers to develop a suggested set of instructions for a standardized bulge test and standardized microtensile test. The most important parameters to be controlled in each test were found to be strain rate, temperature, film deposition method, film length, and strain measurement.

New configuration for efficient and durable copper coating on the outer surface of a tube

DOE PAGES

Ahmad, Irfan; Chapman, Steven F.; Velas, Katherine M.; ...

2017-03-27

A well-adhered copper coating on stainless steel power coupler parts is required in superconducting radio frequency (SRF) accelerators. Radio frequency power coupler parts are complex, tubelike stainless steel structures, which require copper coating on their outer and inner surfaces. Conventional copper electroplating sometimes produces films with inadequate adhesion strength for SRF applications. Electroplating also requires a thin nickel strike layer under the copper coating, whose magnetic properties can be detrimental to SRF applications. Coaxial energetic deposition (CED) and sputtering methods have demonstrated efficient conformal coating on the inner surfaces of tubes but coating the outer surface of a tube ismore » challenging because these coating methods are line of sight. When the substrate is off axis and the plasma source is on axis, only a small section of the substrate’s outer surface is exposed to the source cathode. The conventional approach is to rotate the tube to achieve uniformity across the outer surface. This method results in poor film thickness uniformity and wastes most of the source plasma. Alameda Applied Sciences Corporation (AASC) has developed a novel configuration called hollow external cathode CED (HEC-CED) to overcome these issues. HEC-CED produces a film with uniform thickness and efficiently uses all eroded source material. Furthermore, the Cu film deposited on the outside of a stainless steel tube using the new HEC-CED configuration survived a high pressure water rinse adhesion test. HEC-CED can be used to coat the outside of any cylindrical structure.« less

New configuration for efficient and durable copper coating on the outer surface of a tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmad, Irfan; Chapman, Steven F.; Velas, Katherine M.

A well-adhered copper coating on stainless steel power coupler parts is required in superconducting radio frequency (SRF) accelerators. Radio frequency power coupler parts are complex, tubelike stainless steel structures, which require copper coating on their outer and inner surfaces. Conventional copper electroplating sometimes produces films with inadequate adhesion strength for SRF applications. Electroplating also requires a thin nickel strike layer under the copper coating, whose magnetic properties can be detrimental to SRF applications. Coaxial energetic deposition (CED) and sputtering methods have demonstrated efficient conformal coating on the inner surfaces of tubes but coating the outer surface of a tube ismore » challenging because these coating methods are line of sight. When the substrate is off axis and the plasma source is on axis, only a small section of the substrate’s outer surface is exposed to the source cathode. The conventional approach is to rotate the tube to achieve uniformity across the outer surface. This method results in poor film thickness uniformity and wastes most of the source plasma. Alameda Applied Sciences Corporation (AASC) has developed a novel configuration called hollow external cathode CED (HEC-CED) to overcome these issues. HEC-CED produces a film with uniform thickness and efficiently uses all eroded source material. Furthermore, the Cu film deposited on the outside of a stainless steel tube using the new HEC-CED configuration survived a high pressure water rinse adhesion test. HEC-CED can be used to coat the outside of any cylindrical structure.« less

Preparation and characterization of Cu2SnS3 thin films by electrodeposition

NASA Astrophysics Data System (ADS)

Patel, Biren; Narasimman, R.; Pati, Ranjan K.; Mukhopadhyay, Indrajit; Ray, Abhijit

2018-05-01

Cu2SnS3 thin films were electrodeposited on F:SnO2/Glass substrates at room temperature by using aqueous solution. Copper and tin were first electrodeposited from single bath and post annealed in the presence of sulphur atmosphere to obtain the Cu2SnS3 phase. The Cu2SnS3 phase with preferred orientation along the (112) crystal direction grows to greater extent by the post annealing of the film. Raman analysis confirms the monoclinic crystal structure of Cu2SnS3 with principle mode of vibration as A1 (symmetric breathing mode) corresponding to the band at 291 cm-1. It also reveals the benign coexistence of orthorhombic Cu3SnS4 and Cu2SnS7 phases. Optical properties of the film show direct band gap of 1.25 eV with a high absorption coefficient of the order of 104 cm-1 in the visible region. Photo activity of the electrodeposited film was established in two electrode photoelectro-chemical cell, where an open circuit voltage of 91.6 mV and a short circuit current density of 10.6 µA/cm2 were recorded. Fabrication of Cu2SnS3 thin film heterojunction solar cell is underway.

Characterization of crystallographic properties of thin films using X-ray diffraction

NASA Astrophysics Data System (ADS)

Zoo, Yeongseok

2007-12-01

Silver (Ag) has been recognized as one of promising candidates in Ultra-Large Scale Integrated (ULSI) applications in that it has the lowest bulk electrical resistivity of all pure metals and higher electromigration resistance than other interconnect materials. However, low thermal stability on Silicon Dioxide (Si02) at high temperatures (e.g., agglomeration) is considered a drawback for the Ag metallization scheme. Moreover, if a thin film is attached on a substrate, its properties may differ significantly from that of the bulk, since the properties of thin films can be significantly affected by the substrate. In this study, the Coefficient of Thermal Expansion (CTE) and texture evolution of Ag thin films on different substrates were characterized using various analytical techniques. The experimental results showed that the CTE of the Ag thin film was significantly affected by underlying substrate and the surface roughness of substrate. To investigate the alloying effect for Ag meatallization, small amounts of Copper (Cu) were added and characterized using theta-2theta X-ray Diffraction (XRD) scan and pole figure analysis. These XRD techniques are useful for investigating the primary texture of a metal film, (111) in this study, which (111) is the notation of a specific plane in the orthogonal coordinate system. They revealed that the (111) textures of Ag and Ag(Cu) thin films were enhanced with increasing temperature. Comparison of texture profiles between Ag and Ag(Cu) thin films showed that Cu additions enhanced (111) texture in Ag thin films. Accordingly, the texture enhancement in Ag thin films by Cu addition was discussed. Strained Silicon-On-Insulator (SSOI) is being considered as a potential substrate for Complementary Metal-Oxide-Semiconductor (CMOS) technology since the induced strain results in a significant improvement in device performance. High resolution X-ray diffraction (XRD) techniques were used to characterize the perpendicular and parallel strains in SSOI layers. XRD diffraction profiles generated from the crystalline SSOI layer provided a direct measurement of the layer's strain components. In addition, it has demonstrated that the rotational misalignment between the layer and the substrate can be incorporated within the biaxial strain equations for epitaxial layers. Based on these results, the strain behavior of the SSOI layer and the relation between strained Si and SiO2 layers are discussed for annealed samples.

Low cost, formable, high T(sub c) superconducting wire

NASA Technical Reports Server (NTRS)

Smialek, James L. (Inventor)

1991-01-01

A ceramic superconductivity part such as a wire is produced through the partial oxidation of a specially formulated copper alloy in the core. The alloys contain low level quantities of rare earth and alkaline earth dopant elements. Upon oxidation at high temperature, superconducting oxide phases are formed as a thin film.

An Attenuated Total Reflectance Sensor for Copper: An Experiment for Analytical or Physical Chemistry

ERIC Educational Resources Information Center

Shtoyko, Tanya; Zudans, Imants; Seliskar, Carl J.; Heineman, William R.; Richardson, John N.

2004-01-01

A sensor experiment which can be applied to advanced undergraduate laboratory course in physical or analytical chemistry is described along with certain concepts like the demonstration of chemical sensing, preparation of thin films on a substrate, microtitration, optical determination of complex ion stoichiometry and isosbestic point. It is seen…

Increasing the Endurance and Payload Capacity of Unmanned Vehicles with Thin-Film Photovoltaics

DTIC Science & Technology

2014-06-01

25  1.  Maximum Power Point Tracker .......................................................25  2.  DC-DC Power Conversion...An example of the amorphous silicon cell (from [28]). ...................................20  Figure 15.  The structure of a copper indium gallium ...for the final solar array with the maximum power point indicated

Metallized polymeric foam material

NASA Technical Reports Server (NTRS)

Birnbaum, B. A.; Bilow, N.

1974-01-01

Open-celled polyurethane foams can be coated uniformly with thin film of metal by vapor deposition of aluminum or by sensitization of foam followed by electroless deposition of nickel or copper. Foam can be further processed to increase thickness of metal overcoat to impart rigidity or to provide inert surface with only modest increase in weight.

Organic/carbon nanotubes hybrid thin films for chemical detection

NASA Astrophysics Data System (ADS)

Banimuslem, Hikmat Adnan

Metallophthalocyanines (MPcs) are classified as an important class of conjugated materials and they possess several advantages attributed to their unique chemical structure. Carbon nanotubes (CNT), on the other hand, are known to enhance the properties of nano-composites in the conjugated molecules, due to their one dimensional electronic skeleton, high surface area and high aspect ratio. In this thesis, work has been carried out on the investigation of different substituted metal-phthalocyanines with the aim of developing novel hybrid film structures which incorporates these phthalocyanines and single-walled carbon nanotubes (SWCNT) for chemical detection applications. Octa-substituted copper phthalocyanines (CuPcR[8]) have been characterised using UV-visible absorption spectroscopy. Obtained spectra have yielded an evidence of a thermally induced molecular reorganization in the films. Influence of the nature of substituents in the phthalocyanine molecule on the thin films conductivity was also investigated. Octa-substituted lead (II) phthalocyanines (PbPcR[8]) have also been characterized using UV-visible spectroscopy. Sandwich structures of ITO/PbPcR[8]/In were prepared to investigate the electronic conduction in PbPcR[8]. The variation in the J(V) behavior of the films as a result of heat treatment is expected to be caused by changes in the alignment inside the columnar stacking of the molecules of the films. Thin films of non-covalently hybridised SWCNT and tetra-substituted copper phthalocyanine (CuPcR[4]) molecules have been produced. FTIR, DC conductivity, SEM and AFM results have revealed the [mathematical equation]; interaction between SWCNTs and CuPCR[4] molecules and shown that films obtained from the acid-treated SWCNTs/CuPcR[4] hybrids demonstrated more homogenous surface. Thin films of pristine CuPCR[4] and CuPcR[4]/S WCNT were prepared by spin coating onto gold-coated glass slides and applied as active layers for the detection of benzo[a]pyrene, pentachlorophenol (PCP), 2-chlorophenol, diuron and simazine in water as well as amines vapours in ambient air utilizing total internal reflection spectroscopic ellipsometry (TIRE) as an optical detection method. Different concentrations of pesticides in water ranging from 1 to 25 mug/L have been examined. It was revealed that the shifts in [mathematical equation] spectra of CuPcR[4]SWCNT films were evidently larger than those produced by the pristine CuPcR[4] films, indicating largely improved films' sensitivity of the hybrid films. Adsorption of amines onto films' surfaces has been realised by monitoring changes in the phase shift [mathematical equation] of TIRE. Methylamine has shown higher sensitivity and lower response time among the studied amines. For all amines vapours, the sensitivity of SWCNT/CuPcR[4] hybrid films was higher than the sensitivity of pristine Cu[1]PCR[4] films. Further work has been carried out on hybrids of SWCNT with zinc phthalocyanines (ZnPc). Thin films of pristine SWCNT and SWCNT/ZnPc hybrids were prepared by drop casting onto interdigitated electrodes and applied as active layers to detect ammonia vapor by measuring electrical resistance changes. Influence of pyrene substituent in the phthalocyanine ring on the hybrid formation and their sensor response has also been verified.

Electrodeposition of titania and barium titanate thin films for high dielectric applications

NASA Astrophysics Data System (ADS)

Roy, Biplab Kumar

In order to address the requirement of a low-temperature low-cost cost processing for depositing high dielectric constant ceramic films for applications in embedded capacitor and flexible electronics technology, two different chemical bath processes, namely, thermohydrolytic deposition (TD) and cathodic electrodeposition (ED) have been exploited to generate titania thin films. In thermohydrolytic deposition technique, titania films were generated from acidic aqueous solution of titanium chloride on F: SnO2 coated glass and Si substrates by temperature assisted hydrolysis mechanism. On the other hand, in cathodic electrodeposition, in-situ electro-generation of hydroxyl ions triggered a fast deposition of titania on conductive substrates such as copper and F: SnO2 coated glass from peroxotitanium solution at low temperatures (˜0°C). In both techniques, solution compositions affected the morphology and crystallinity of the films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques have been employed to perform such characterization. As both processes utilized water as solvent, the as-deposited films contained hydroxyl ligand or physically adsorbed water molecules in the titania layer. Besides that, electrodeposited films contained peroxotitanium bonds which were characterized by FTIR studies. Although as-electrodeposited titania films were X-ray amorphous, considerable crystallinity could be generated by heat treatment. The films obtained from both the processes showed v moderately high dielectric constant (ranging from 9-30 at 100 kHz) and high breakdown voltage (0.09-0.15 MV/cm) in electrical measurements. To further improve the dielectric constant, electrodeposited titania films were converted to barium titanate films in high pH barium ion containing solution at 80-90°C. The resultant film contained cubic crystalline barium titanate verified by XRD analysis. Simple low-temperature hydrothermal technique of conversion worked perfect for F:SnO2 coated glass substrates, but in this process, high pH precursor caused corrosion in copper substrates and deposition of copper oxide in the final films. To overcome this, an innovative technique, which incorporates an electrochemical protection of substrates by application of cathodic potential in addition to common hydrothermal conversion, has been adopted. Films generated by common hydrothermal technique on F:SnO 2/glass substrates and via electrochemical-hydrothermal technique on Cu substrates showed promising dielectric behavior. Apart from the experimental studies, this report also includes various thermodynamic studies related to hydrolysis and precipitation of titanium ion, protection of copper during titania deposition and barium titanate conversion. Gibbs free energy based model and speciation studies were used to understand supersaturation which is a controlling factor in thermohydrolytic deposition. Similar approaches were utilized to understand the possibilities of barium titanate formation at different Ba2+ concentrations with different pH conditions. Possibilities of atmospheric carbon dioxide incorporation to generate barium carbonate instead of barium titanate formation were also determined by mathematical calculations. Whenever relevant, results of such theoretical analysis were utilized to design the experiment or to explain the experimental observations.

Thin-film copper indium gallium selenide solar cell based on low-temperature all-printing process.

PubMed

Singh, Manjeet; Jiu, Jinting; Sugahara, Tohru; Suganuma, Katsuaki

2014-09-24

In the solar cell field, development of simple, low-cost, and low-temperature fabrication processes has become an important trend for energy-saving and environmental issues. Copper indium gallium selenide (CIGS) solar cells have attracted much attention due to the high absorption coefficient, tunable band gap energy, and high efficiency. However, vacuum and high-temperature processing in fabrication of solar cells have limited the applications. There is a strong need to develop simple and scalable methods. In this work, a CIGS solar cell based on all printing steps and low-temperature annealing is developed. CIGS absorber thin film is deposited by using dodecylamine-stabilized CIGS nanoparticle ink followed by printing buffer layer. Silver nanowire (AgNW) ink and sol-gel-derived ZnO precursor solution are used to prepare a highly conductive window layer ZnO/[AgNW/ZnO] electrode with a printing method that achieves 16 Ω/sq sheet resistance and 94% transparency. A CIGS solar cell based on all printing processes exhibits efficiency of 1.6% with open circuit voltage of 0.48 V, short circuit current density of 9.7 mA/cm(2), and fill factor of 0.34 for 200 nm thick CIGS film, fabricated under ambient conditions and annealed at 250 °C.

Flexible copper-indium-diselenide films and devices for space applications

NASA Technical Reports Server (NTRS)

Armstrong, J. H.; Pistole, C. O.; Misra, M. S.; Kapur, V. K.; Basol, B. M.

1991-01-01

With the ever increasing demands on space power systems, it is imperative that low cost, lightweight, reliable photovoltaics be developed. One avenue of pursuit for future space power applications is the use of low cost, lightweight flexible PV cells and arrays. Most work in this area assumes the use of flexible amorphous silicon (a-Si), despite its inherent instability and low efficiencies. However, polycrystalline thin film PV such as copper-indium-diselenide (CIS) are inherently more stable and exhibit better performance than a-Si. Furthermore, preliminary data indicate that CIS also offers exciting properties with respect to space applications. However, CIS has only heretofore only produced on rigid substrates. The implications of flexible CIS upon present and future space power platforms was explored. Results indicate that space qualified CIS can dramatically reduce the cost of PV, and in most cases, can be substituted for silicon (Si) based on end-of-life (EOL) estimations. Furthermore, where cost is a prime consideration, CIS can become cost effective than gallium arsenide (GaAs) in some applications. Second, investigations into thin film deposition on flexible substrates were made, and data from these tests indicate that fabrication of flexible CIS devices is feasible. Finally, data is also presented on preliminary TCO/CdS/CuInSe2/Mo devices.

Nanostructured hybrid ZnO thin films for energy conversion

PubMed Central

2011-01-01

We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc) and Eosin-Y (EoY). Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled. PMID:21711909

Nanostructured copper phthalocyanine-sensitized multiwall carbon nanotube films.

PubMed

Hatton, Ross A; Blanchard, Nicholas P; Stolojan, Vlad; Miller, Anthony J; Silva, S Ravi P

2007-05-22

We report a detailed study of the interaction between surface-oxidized multiwall carbon nanotubes (o-MWCNTs) and the molecular semiconductor tetrasulfonate copper phthalocyanine (TS-CuPc). Concentrated dispersions of o-MWCNT in aqueous solutions of TS-CuPc are stable toward nanotube flocculation and exhibit spontaneous nanostructuring upon rapid drying. In addition to hydrogen-bonding interactions, the compatibility between the two components is shown to result from a ground-state charge-transfer interaction with partial charge transfer from o-MWCNT to TS-CuPc molecules orientated such that the plane of the macrocycle is parallel to the nanotube surface. The electronegativity of TS-CuPc as compared to unsubsubtituted copper phthalocyanine is shown to result from the electron-withdrawing character of the sulfonate substituents, which increase the molecular ionization potential and promote cofacial molecular aggregation upon drying. Upon spin casting to form uniform thin films, the experimental evidence is consistent with an o-MWCNT scaffold decorated with phthalocyanine molecules self-assembled into extended aggregates reminiscent of 1-D linearly stacked phthalocyanine polymers. Remarkably, this self-organization occurs in a fraction of a second during the spin-coating process. To demonstrate the potential utility of this hybrid material, it is successfully incorporated into a model organic photovoltaic cell at the interface between a poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methyl ester bulk heterojunction layer and an indium-tin oxide-coated glass electrode to increase the light-harvesting capability of the device and facilitate hole extraction. The resulting enhancement in power conversion efficiency is rationalized in terms of the electronic, optical, and morphological properties of the nanostructured thin film.

A multiscale coupled finite-element and phase-field framework to modeling stressed grain growth in polycrystalline thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jamshidian, M., E-mail: jamshidian@cc.iut.ac.ir; Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstrasse 15, 99423 Weimar; Thamburaja, P., E-mail: prakash.thamburaja@gmail.com

A previously-developed finite-deformation- and crystal-elasticity-based constitutive theory for stressed grain growth in cubic polycrystalline bodies has been augmented to include a description of excess surface energy and grain-growth stagnation mechanisms through the use of surface effect state variables in a thermodynamically-consistent manner. The constitutive theory was also implemented into a multiscale coupled finite-element and phase-field computational framework. With the material parameters in the constitutive theory suitably calibrated, our three-dimensional numerical simulations show that the constitutive model is able to accurately predict the experimentally-determined evolution of crystallographic texture and grain size statistics in polycrystalline copper thin films deposited on polyimide substratemore » and annealed at high-homologous temperatures. In particular, our numerical analyses show that the broad texture transition observed in the annealing experiments of polycrystalline thin films is caused by grain growth stagnation mechanisms. - Graphical abstract: - Highlights: • Developing a theory for stressed grain growth in polycrystalline thin films. • Implementation into a multiscale coupled finite-element and phase-field framework. • Quantitative reproduction of the experimental grain growth data by simulations. • Revealing the cause of texture transition to be due to the stagnation mechanisms.« less

Thin-film photovoltaic power generation offers decreasing greenhouse gas emissions and increasing environmental co-benefits in the long term.

PubMed

Bergesen, Joseph D; Heath, Garvin A; Gibon, Thomas; Suh, Sangwon

2014-08-19

Thin-film photovoltaic (PV) technologies have improved significantly recently, and similar improvements are projected into the future, warranting reevaluation of the environmental implications of PV to update and inform policy decisions. By conducting a hybrid life cycle assessment using the most recent manufacturing data and technology roadmaps, we compare present and projected environmental, human health, and natural resource implications of electricity generated from two common thin-film PV technologies-copper indium gallium selenide (CIGS) and cadmium telluride (CdTe)-in the United States (U.S.) to those of the current U.S. electricity mix. We evaluate how the impacts of thin films can be reduced by likely cost-reducing technological changes: (1) module efficiency increases, (2) module dematerialization, (3) changes in upstream energy and materials production, and (4) end-of-life recycling of balance of system (BOS). Results show comparable environmental and resource impacts for CdTe and CIGS. Compared to the U.S. electricity mix in 2010, both perform at least 90% better in 7 of 12 and at least 50% better in 3 of 12 impact categories, with comparable land use, and increased metal depletion unless BOS recycling is ensured. Technological changes, particularly efficiency increases, contribute to 35-80% reductions in all impacts by 2030.

Preventing light-induced degradation in multicrystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lindroos, J., E-mail: jeanette.lindroos@aalto.fi; Boulfrad, Y.; Yli-Koski, M.

2014-04-21

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

Preventing light-induced degradation in multicrystalline silicon

NASA Astrophysics Data System (ADS)

Lindroos, J.; Boulfrad, Y.; Yli-Koski, M.; Savin, H.

2014-04-01

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.

Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

NASA Astrophysics Data System (ADS)

Perrone, A.; D'Elia, M.; Gontad, F.; Di Giulio, M.; Maruccio, G.; Cola, A.; Stankova, N. E.; Kovacheva, D. G.; Broitman, E.

2014-07-01

Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

Silica coatings formed on noble dental casting alloy by the sol-gel dipping process.

PubMed

Yoshida, K; Tanagawa, M; Kamada, K; Hatada, R; Baba, K; Inoi, T; Atsuta, M

1999-08-01

The sol-gel dipping process, in which liquid silicon alkoxide is transformed into the solid silicon-oxygen network, can produce a thin film coating of silica (SiO2). The features of this method are high homogeneity and purity of the thin SiO2 film and a low sinter temperature, which are important in preparation of coating films that can protect from metallic ion release from the metal substrate and prevent attachment of dental plaque. We evaluated the surface characteristics of the dental casting silver-palladium-copper-gold (Ag-Pd-Cu-Au) alloy coated with a thin SiO2 film by the sol-gel dipping process. The SiO2 film bonded strongly (over 40 MPa) to Ti-implanted Ag-Pd-Cu-Au alloy substrate as demonstrated by a pull test. Hydrophobilization of Ti-implanted/SiO2-coated surfaces resulted in a significant increase of the contact angle of water (80.5 degrees) compared with that of the noncoated alloy specimens (59.3 degrees). Ti-implanted/SiO2-coated specimens showed the release of many fewer metallic ions (192 ppb/cm2) from the substrate than did noncoated specimens (2,089 ppb/cm2). The formation of a thin SiO2 film by the sol-gel dipping process on the surface of Ti-implanted Ag-Pd-Cu-Au alloy after casting clinically may be useful for minimizing the possibilities of the accumulation of dental plaque and metal allergies caused by intraoral metal restorations.

Axial distribution of plasma fluctuations, plasma parameters, deposition rate and grain size during copper deposition

NASA Astrophysics Data System (ADS)

Gopikishan, S.; Banerjee, I.; Pathak, Anand; Mahapatra, S. K.

2017-08-01

Floating potential fluctuations, plasma parameters and deposition rate have been investigated as a function of axial distance during deposition of copper in direct current (DC) magnetron sputtering system. Fluctuations were analyzed using phase space, power spectra and amplitude bifurcation plots. It has been observed that the fluctuations are modified from chaotic to ordered state with increase in the axial distance from cathode. Plasma parameters such as electron density (ne), electron temperature (Te) and deposition rate (Dr) were measured and correlated with plasma fluctuations. It was found that more the deposition rate, greater the grain size, higher the electron density, higher the electron temperature and more chaotic the oscillations near the cathode. This observation could be helpful to the thin film technology industry to optimize the required film.

[The change in optical spectra from solid and liquid solution of copper phthalocyanines derivatives].

PubMed

Zheng, Xiao-pan; He, Zhi-qun; Zhang, Chun-xiu; Xu, Zheng; Wang, Yong-sheng

2006-06-01

In the present work, the change in electronic absorption spectra from three copper phthalocyanines (CuPc, tb-CuPc, oo-CuPc) in different environments was investigated. The mechanism of red shift Q-band absorption from the three species in an organic solvent before and after protonation was discussed. This was used to compare with those dispersed in solid films. The relation between the molecular interactions and the spectra change was studied. In a combination of POM, DSC and XRD techniques, the structure and morphology of the thin films were characterised. It was found that the molecules in the doped matrices of PC were associated or aggregated. This association and hence the corresponding change in absorption spectra cannot be altered by the modification of dopant concentration.

Effect of current density during electrodeposition on microstructure and hardness of textured Cu coating in the application of antimicrobial Al touch surface.

PubMed

Augustin, Arun; Huilgol, Prashant; Udupa, K Rajendra; Bhat K, Udaya

2016-10-01

Copper is a well proven antimicrobial material which can be used in the form of a coating on the touch surfaces. Those coating can offer a good service as touch surface for very long time if only they possess good mechanical properties like scratch resistance and microhardness. In the present work the above mentioned mechanical properties were determined on the electrodeposited copper thin film; deposited on double zincated aluminium. During deposition, current density was varied from 2Adm(-2) to 10Adm(-2), to produce crystallite size in the range of 33.5nm to 66nm. The crystallite size was calculated from the X-ray peak broadening (Scherrer׳s formula) which were later confirmed by TEM micrographs. The scratch hardness and microhardness of the coating were measured and correlated with the crystallite size in the copper coating. Both characteristic values were found to increase with the reduction in crystallite size. Reduced crystallite size (Hall-Petch effect) and preferred growth of copper films along (111) plane play a significant role on the increase in the hardness of the coating. Further, TEM analysis reveals the presence of nano-twins in the film deposited at higher current density, which contributed to a large extent to the sharp increase of coating hardness compared to the mechanism of Hall-Petch effect. The antimicrobial ability of the coated sample has been evaluated against Escherichia coli bacteria and which is compared with that of commercially available bulk copper using the colony count method. 94% of E. coli cells were died after six hours of exposure to the copper coated surface. The morphology of the copper treated cells was studied using SEM. Copyright © 2016 Elsevier Ltd. All rights reserved.

Linking strain anisotropy and plasticity in copper metallization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murray, Conal E., E-mail: conal@us.ibm.com; Jordan-Sweet, Jean; Priyadarshini, Deepika

2015-05-04

The elastic anisotropy of copper leads to significant variation in the x-ray elastic constants (XEC), which link diffraction-based strain measurements to stress. An accurate depiction of the mechanical response in copper thin films requires a determination of an appropriate grain interaction model that lies between Voigt and Reuss limits. It is shown that the associated XEC weighting fraction, x*, between these limits provides a metric by which strain anisotropy can be quantified. Experimental values of x*, as determined by a linear regression scheme of diffraction data collected from multiple reflections, reveal the degree of strain anisotropy and its dependence onmore » plastic deformation induced during in-situ and ex-situ thermal treatments.« less

Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

PubMed

Papadimitropoulos, G; Davazoglou, D

2011-09-01

Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.

A Comparison of Various magnetic thin films for the application of microscale magnetic components

NASA Astrophysics Data System (ADS)

Flynn, David; Desmulliez, Marc

2006-04-01

A novel method to manufacture and assemble a microinductor that is based on flipchip bonding is described in this paper. The fabricated inductors have an inductance ranging from 0.3 µH to 180 µH. An optimum Q-factor of 14 was attained at 1MHz. Cobalt-Copper-iron cores maintained a constant inductance across a 1 kHz-1MHz bandwidth. The thin film laminate minimizes the eddy current loss and the hysteresis loss was negligible. Impedance increases linearly with frequency indicating that parasitic capacitance effects in this frequency range are negligible. The microinductor operated at an efficiency of 92% at 1MHz achieving a power density of 3.75 W/mm3.

ZnO deposition on metal substrates: Relating fabrication, morphology, and wettability

NASA Astrophysics Data System (ADS)

Beaini, Sara S.; Kronawitter, Coleman X.; Carey, Van P.; Mao, Samuel S.

2013-05-01

It is not common practice to deposit thin films on metal substrates, especially copper, which is a common heat exchanger metal and practical engineering material known for its heat transfer properties. While single crystal substrates offer ideal surfaces with uniform structure for compatibility with oxide deposition, metallic surfaces needed for industrial applications exhibit non-idealities that complicate the fabrication of oxide nanostructure arrays. The following study explored different ZnO fabrication techniques to deposit a (super)hydrophobic thin film of ZnO on a metal substrate, specifically copper, in order to explore its feasibility as an enhanced condensing surface. ZnO was selected for its non-toxicity, ability to be made (super)hydrophobic with hierarchical roughness, and its photoinduced hydrophilicity characteristic, which could be utilized to pattern it to have both hydrophobic-hydrophilic regions. We investigated the variation of ZnO's morphology and wetting state, using SEMs and sessile drop contact angle measurements, as a function of different fabrication techniques: sputtering, pulsed laser deposition (PLD), electrodeposition and annealing Zn. We successfully fabricated (super)hydrophobic ZnO on a mirror finish, commercially available copper substrate using the scalable electrodeposition technique. PLD for ZnO deposition did not prove viable, as the ZnO samples on metal substrates were hydrophilic and the process does not lend itself to scalability. The annealed Zn sheets did not exhibit consistent wetting state results.

Analysis of localized surface plasmon resonances in gold nanoparticles surrounded by copper oxides

NASA Astrophysics Data System (ADS)

Stamatelatos, A.; Sousanis, A.; Chronis, A. G.; Sigalas, M. M.; Grammatikopoulos, S.; Poulopoulos, P.

2018-02-01

Au-doped Cu thin films are produced by co-deposition of Au and Cu via radiofrequency magnetron sputtering in a vacuum chamber with a base pressure of 1 × 10-7 mbar. After post annealing in a furnace with air, one may obtain either Au-Cu2O or Au-CuO nanocomposite thin films. The presence of Au does not have any considerable influence on the position of the optical band gap of the oxides. Only the Au-CuO system shows well-formed localized surface plasmonic resonances with Gaussian shape. We study systematically the plasmonic behavior of the nanocomposites as a function of the gold concentration, annealing time, and film thickness. The intensity of the resonances, their position, and width are intensely affected by all these parameters. The experimental results are compared with respect to rigorous theoretical calculations. The similarities and differences between experiment and theory are discussed.

Calcium copper-titanate thin film growth: tailoring of the operational conditions through nanocharacterization and substrate nature effects.

PubMed

Lo Nigro, Raffaella; Toro, Roberta G; Malandrino, Graziella; Fragalà, Ignazio L; Losurdo, Maria; Giangregorio, Michelaria M; Bruno, Giovanni; Raineri, Vito; Fiorenza, Patrick

2006-09-07

A novel approach based on a molten multicomponent precursor source has been applied for the MOCVD fabrication of high-quality CaCu(3)Ti(4)O(12) (CCTO) thin films on various substrates. The adopted in situ strategy involves a molten mixture consisting of Ca(hfa)(2).tetraglyme, Ti(tmhd)(2)(O-iPr)(2), and Cu(tmhd)(2) [Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme = 2,5,8,11,14-pentaoxapentadecane; Htmhd = 2,2,6,6-tetramethyl-3,5-heptandione; O-iPr = isopropoxide] precursors. Film structural and morphological characterizations have been carried out by several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)], and in particular the energy filtered TEM mapping and X-ray energy dispersive (EDX) analysis in TEM mode provided a suitable correlation between nanostructural properties of CCTO films and deposition conditions and/or the substrate nature. Correlation between the nanostructure and optical/dielectric properties has been investigated exploiting spectroscopic ellipsometry.

High capacity lithium ion batteries composed of cobalt oxide nanoparticle anodes and Raman spectroscopic analysis of nanoparticle strain dynamics in batteries

NASA Astrophysics Data System (ADS)

Islam, Mohammad A.; Zuba, Mateusz; DeBiase, Vincent; Noviasky, Nicholas; Hawley, Christopher J.

2018-02-01

Cobalt nanoparticle thin films were electrophoretically deposited on copper current collectors and were annealed into thin films of hollow Co3O4 nanoparticles. These thin films were directly used as the anodes of lithium ion batteries (LIBs) without the addition of conducting carbons and bonding agents. LIBs thus fabricated show high gravimetric capacities and long cycle lives. For ≈1.0 μm thick Co3O4 nanoparticle films the gravimetric capacities of the batteries were more than 800 mAh g-1 at a current rate of C/15, which is about 90% of the theoretical maximum. Additionally, the batteries were able to undergo 200 charge/discharge cycles at a relatively fast rate of C/5 and maintain 50% of the initial capacity. In order to understand the electrochemistry of lithiation in the context of nanoparticles, Raman spectra were collected at different stages of the electrode cycles to determine the chemical and structural changes in the nanomaterials. Our results indicate that initially the electrode nanoparticles were under significant strain and as the battery underwent many cycles of charging/discharging the nanoparticles experienced progressive strain relaxation.

The Availability of Indium: The Present, Medium Term, and Long Term

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lokanc, Martin; Eggert, Roderick; Redlinger, Michael

2015-10-01

Demand for indium is likely to increase if the growth in deployment of the copper-indium-gallium-selenide (CIGS) and III-V thin-film photovoltaic technologies accelerates. There are concerns about indium supply constraints since it is relatively rare element in the earth's crust and because it is produced exclusively as a byproduct.

Materials and Devices | Photovoltaic Research | NREL

Science.gov Websites

Polycrystalline Thin-Film PV Cadmium telluride (CdTe) solar cells Copper indium gallium diselenide (CIGS) solar cells Perovskite and Organic PV Perovskite solar cells Perovskite Patent Portfolio Organic PV (OPV ) solar cells Advanced Materials, Devices, and Concepts We explore new PV materials using high-throughput

Method of forming low cost, formable High T(subc) superconducting wire

NASA Technical Reports Server (NTRS)

Smialek, James L. (Inventor)

1989-01-01

A ceramic superconductivity part, such as a wire, is produced through the partial oxidation of a specially formulated copper alloy in a core. The alloys contains low level of quantities of rare earth and alkaline earth dopant elements. Upon oxidation at high temperatures, and superconducting oxide phases are formed as a thin film.

Photon and carrier management design for nonplanar thin-film copper indium gallium diselenide photovoltaics

DOEpatents

Atwater, Harry A.; Callahan, Dennis; Bukowsky, Colton

2017-11-21

Photovoltaic structures are disclosed. The structures can comprise randomly or periodically structured layers, a dielectric layer to reduce back diffusion of charge carriers, and a metallic layer to reflect photons back towards the absorbing semiconductor layers. This design can increase efficiency of photovoltaic structures. The structures can be fabricated by nanoimprint.

Thin film solar cell configuration and fabrication method

DOEpatents

Menezes, Shalini

2009-07-14

A new photovoltaic device configuration based on an n-copper indium selenide absorber and a p-type window is disclosed. A fabrication method to produce this device on flexible or rigid substrates is described that reduces the number of cell components, avoids hazardous materials, simplifies the process steps and hence the costs for high volume solar cell manufacturing.

Influence of Annealing Temperature on Some Optical and Structural Properties of Cu2ZnSnS4 Deposited by CZT Co-Electrodeposition Coupled with Chemical Bath Technique

NASA Astrophysics Data System (ADS)

Okoth, Obila Jorim; Domtau, Dinfa Luka; Marina, Mukabi; John, Onyatta; Awuor, Ogacho Alex

Copper indium gallium selenide (CIGS) is currently most efficient thin film solar technology in use but it is faced with problems of material scarcity and toxicity. An alternative earth abundant and non-toxic materials consisting of Cu2ZnSnS4 (CZTS) have been investigated as a replacement for CIGS. In this work, CZTS thin films deposited by low cost co-electrodeposition, at a potential of -1.2V, coupled with chemical bath techniques at room temperature and then annealed under sulphur rich atmosphere were investigated. CZTS thin film quality determination was carried out using Raman spectroscopy which confirmed formation of quality CZTS film, main Raman peaks at 288cm-1 and 338cm-1 were observed. Electrical characterization was carried out using four-point probe instrument and the resistivity was in the order of ˜10-4Ω-cm. The optical characterization was done using UV-VIS-NIR spectrophotometer. The bandgaps of the annealed CZTS film ranged from 1.45 to 1.94eV with absorption coefficient of order ˜104cm-1 in the visible and near infrared range of the solar spectrum were observed.

Color tunable low cost transparent heat reflector using copper and titanium oxide for energy saving application

PubMed Central

Dalapati, Goutam Kumar; Masudy-Panah, Saeid; Chua, Sing Teng; Sharma, Mohit; Wong, Ten It; Tan, Hui Ru; Chi, Dongzhi

2016-01-01

Multilayer coating structure comprising a copper (Cu) layer sandwiched between titanium dioxide (TiO2) were demonstrated as a transparent heat reflecting (THR) coating on glass for energy-saving window application. The main highlight is the utilization of Cu, a low-cost material, in-lieu of silver which is widely used in current commercial heat reflecting coating on glass. Color tunable transparent heat reflecting coating was realized through the design of multilayer structure and process optimization. The impact of thermal treatment on the overall performance of sputter deposited TiO2/Cu/TiO2 multilayer thin film on glass substrate is investigated in detail. Significant enhancement of transmittance in the visible range and reflectance in the infra-red (IR) region has been observed after thermal treatment of TiO2/Cu/TiO2 multilayer thin film at 500 °C due to the improvement of crystal quality of TiO2. Highest visible transmittance of 90% and IR reflectance of 85% at a wavelength of 1200 nm are demonstrated for the TiO2/Cu/TiO2 multilayer thin film after annealing at 500 °C. Performance of TiO2/Cu/TiO2 heat reflector coating decreases after thermal treatment at 600 °C. The wear performance of the TiO2/Cu/TiO2 multilayer structure has been evaluated through scratch hardness test. The present work shows promising characteristics of Cu-based THR coating for energy-saving building industry. PMID:26846687

Color tunable low cost transparent heat reflector using copper and titanium oxide for energy saving application.

PubMed

Dalapati, Goutam Kumar; Masudy-Panah, Saeid; Chua, Sing Teng; Sharma, Mohit; Wong, Ten It; Tan, Hui Ru; Chi, Dongzhi

2016-02-05

Multilayer coating structure comprising a copper (Cu) layer sandwiched between titanium dioxide (TiO2) were demonstrated as a transparent heat reflecting (THR) coating on glass for energy-saving window application. The main highlight is the utilization of Cu, a low-cost material, in-lieu of silver which is widely used in current commercial heat reflecting coating on glass. Color tunable transparent heat reflecting coating was realized through the design of multilayer structure and process optimization. The impact of thermal treatment on the overall performance of sputter deposited TiO2/Cu/TiO2 multilayer thin film on glass substrate is investigated in detail. Significant enhancement of transmittance in the visible range and reflectance in the infra-red (IR) region has been observed after thermal treatment of TiO2/Cu/TiO2 multilayer thin film at 500 °C due to the improvement of crystal quality of TiO2. Highest visible transmittance of 90% and IR reflectance of 85% at a wavelength of 1200 nm are demonstrated for the TiO2/Cu/TiO2 multilayer thin film after annealing at 500 °C. Performance of TiO2/Cu/TiO2 heat reflector coating decreases after thermal treatment at 600 °C. The wear performance of the TiO2/Cu/TiO2 multilayer structure has been evaluated through scratch hardness test. The present work shows promising characteristics of Cu-based THR coating for energy-saving building industry.

Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells.

PubMed

Steichen, Marc; Thomassey, Matthieu; Siebentritt, Susanne; Dale, Phillip J

2011-03-14

The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.

Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se{sub 2} thin-film solar cell absorbers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lehmann, Jascha; Potsdam Institute for Climate Impact Research; Lehmann, Sebastian, E-mail: sebastian.lehmann@ftf.lth.se

2014-12-21

Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for “realistic” surfacesmore » of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In{sub 1-x}Ga{sub x})Se{sub 2} thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH{sub 3}-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is – apart from a slight change in surface composition – identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.« less

A Cuprous Oxide Thin Film Non-Enzymatic Glucose Sensor Using Differential Pulse Voltammetry and Other Voltammetry Methods and a Comparison to Different Thin Film Electrodes on the Detection of Glucose in an Alkaline Solution

PubMed Central

Molazemhosseini, Alireza; Liu, Chung Chiun

2018-01-01

A cuprous oxide (Cu2O) thin layer served as the base for a non-enzymatic glucose sensor in an alkaline medium, 0.1 NaOH solution, with a linear range of 50–200 mg/dL using differential pulse voltammetry (DPV) measurement. An X-ray photoelectron spectroscopy (XPS) study confirmed the formation of the cuprous oxide layer on the thin gold film sensor prototype. Quantitative detection of glucose in both phosphate-buffered saline (PBS) and undiluted human serum was carried out. Neither ascorbic acid nor uric acid, even at a relatively high concentration level (100 mg/dL in serum), interfered with the glucose detection, demonstrating the excellent selectivity of this non-enzymatic cuprous oxide thin layer-based glucose sensor. Chronoamperometry and single potential amperometric voltammetry were used to verify the measurements obtained by DPV, and the positive results validated that the detection of glucose in a 0.1 M NaOH alkaline medium by DPV measurement was effective. Nickel, platinum, and copper are commonly used metals for non-enzymatic glucose detection. The performance of these metal-based sensors for glucose detection using DPV were also evaluated. The cuprous oxide (Cu2O) thin layer-based sensor showed the best sensitivity for glucose detection among the sensors evaluated. PMID:29316652

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

NASA Astrophysics Data System (ADS)

Rajanikant, Ray Jayminkumar

The generation of electrical current from the solar radiation is known as the photovoltaic effect. Solar cell, also known as photovoltaic (PV) cell, is a device that works on the principle of photovoltaic effect, and is widely used for the generation of electricity. Thin film polycrystalline solar cells based on copper indium gallium diselenide (CIGS) are admirable candidates for clean energy production with competitive prices in the near future. CIGS based polycrystalline thin film solar cells with efficiencies of 20.3 % and excellent temperature stability have already been reported at the laboratory level. The present study discusses about the fabrication of CIGS solar cell. Before the fabrication part of CIGS solar cell, a numerical simulation is carried out using One-Dimensional Analysis of Microelectronic and Photonic Structures (AMPS-ID) for understanding the physics of a solar cell device, so that an optimal structure is analyzed. In the fabrication part of CIGS solar cell, Molybdenum (Mo) thin film, which acts as a 'low' resistance metallic back contact, is deposited by RF magnetron sputtering on organically cleaned soda lime glass substrate. The major advantages for using Mo are high temperature, (greater than 600 °C), stability and inertness to CIGS layer (i.e., no diffusion of CIGS into Mo). Mo thin film is deposited at room temperature (RT) by varying the RF power and the working pressure. The Mo thin films deposited with 100 W RF power and 1 mTorr working pressure show a reflectivity of above average 50 % and the low sheet resistance of about 1 O/□. The p-type CIGS layer is deposited on Mo. Before making thin films of CIGS, a powder of CIGS material is synthesized using melt-quenching method. Thin films of CIGS are prepared by a single-stage flash evaporation process on glass substrates, initially, for optimization of deposition parameters and than on Mo coated glass substrates for device fabrication. CIGS thin film is deposited at 250 °C at a pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further improvement of the cell we have varied the thickness of the buffer layer i.e. CdS. In addition, the deposition of CdS is carried out using flash evaporation method to improve the CIGS/CdS junction. Heat soak pulses of about 200 °C are also applied for 20 sec for the further upgrading the junction. To protect the CIGS/CdS junction from the high-energy sputtered particles of ZnO, a fine mesh of stainless steel is placed just before the sample holder to enhance the performance of the solar cell. The influence of the thickness of iZnO and CdS has been checked. The maximum V oe and Jsc of about 138 mV and 1.3 mA/cm2 , respectively, are achieved using flash evaporated CIGS layer and flash evaporated CdS thin film. Further improvement of current performance can be done either by adopting some other fabrication method to obtain a denser CIGS absorber layer or replacing the CdS layer with some other efficient buffer layer.

Rectenna Technology Program: Ultra light 2.45 GHz rectenna 20 GHz rectenna

NASA Technical Reports Server (NTRS)

Brown, William C.

1987-01-01

The program had two general objectives. The first objective was to develop the two plane rectenna format for space application at 2.45 GHz. The resultant foreplane was a thin-film, etched-circuit format fabricated from a laminate composed of 2 mil Kapton F sandwiched between sheets of 1 oz copper. The thin-film foreplane contains half wave dipoles, filter circuits, rectifying Schottky diode, and dc bussing lead. It weighs 160 grams per square meter. Efficiency and dc power output density were measured at 85% and 1 kw/sq m, respectively. Special testing techniques to measure temperature of circuit and diode without perturbing microwave operation using the fluoroptic thermometer were developed. A second objective was to investigate rectenna technology for use at 20 GHz and higher frequencies. Several fabrication formats including the thin-film scaled from 2.45 GHz, ceramic substrate and silk-screening, and monolithic were investigated, with the conclusion that the monolithic approach was the best. A preliminary design of the monolithic rectenna structure and the integrated Schottky diode were made.

Temperature stabilized effusion cell evaporation source for thin film deposition and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Tiedje, H. F.; Brodie, D. E.

2000-05-01

A simple effusion cell evaporation source for thin film deposition and molecular-beam epitaxy is described. The source consists of a crucible with a thermocouple temperature sensor heated by a resistive crucible heater. Radiation heat transfer from the crucible to the thermocouple produces a consistent and reproducible thermocouple temperature for a given crucible temperature, without direct contact between the thermocouple and the crucible. The thermocouple temperature is somewhat less than the actual crucible temperature because of heat flow from the thermocouple junction along the thermocouple lead wires. In a typical case, the thermocouple temperature is 1007 °C while the crucible is at 1083 °C. The crucible temperature stability is estimated from the measured sensitivity of the evaporation rate of indium to temperature, and the observed variations in the evaporation rate for a fixed thermocouple temperature. The crucible temperature peak-to-peak variation over a one hour period is 1.2 °C. Machined molybdenum crucibles were used in the indium and copper sources for depositing CuInSe2 thin films for solar cells.

Space Plasma Testing of High-Voltage Thin-Film Solar Arrays with Protective Coatings

NASA Technical Reports Server (NTRS)

Tlomak, Pawel; Hausgen, Paul E.; Merrill, John; Senft, Donna; Piszczor, Michael F., Jr.

2007-01-01

This paper gives an overview of the space plasma test program for thin-film photovoltaics (TFPV) technologies developed at the Air Force Research Laboratory (AFRL). The main objective of this program is to simulate the effects of space plasma characteristic of LEO and MEO environments on TFPV. Two types of TFPV, amorphous silicon (a-Si) and copper-indium-gallium-diselenide (CIGS), coated with two types of thin-film, multifunctional coatings were used for these studies. This paper reports the results of the first phase of this program, namely the results of preliminary electrostatic charging, arcing, dielectric breakdown, and collection current measurements carried out with a series of TFPV exposed to simulated space plasma at the NASA Glenn Plasma Interaction Facility. The experimental data demonstrate that multifunctional coatings developed for this program provide effective protection against the plasma environment while minimizing impact on power generation performance. This effort is part of an ongoing program led by the Space Vehicles Directorate at the AFRL devoted to the development and space qualification of TFPV and their protective coatings.

High resolution electron energy loss spectroscopy of spin waves in ultra-thin film - The return of the adiabatic approximation?

NASA Astrophysics Data System (ADS)

Ibach, Harald

2014-12-01

The paper reports on recent considerable improvements in electron energy loss spectroscopy (EELS) of spin waves in ultra-thin films. Spin wave spectra with 4 meV resolution are shown. The high energy resolution enables the observation of standing modes in ultra-thin films in the wave vector range of 0.15 Å- 1 < q|| < 0.3 Å- 1. In this range, Landau damping is comparatively small and standing spin wave modes are well-defined Lorentzians for which the adiabatic approximation is well suited, an approximation which was rightly dismissed by Mills and collaborators for spin waves near the Brillouin zone boundary. With the help of published exchange coupling constants, the Heisenberg model, and a simple model for the spectral response function, experimental spectra for Co-films on Cu(100) as well as for Co films capped with further copper layers are successfully simulated. It is shown that, depending on the wave vector and film thickness, the most prominent contribution to the spin wave spectrum may come from the first standing mode, not from the so-called surface mode. In general, the peak position of a low-resolution spin wave spectrum does not correspond to a single mode. A discussion of spin waves based on the "dispersion" of the peak positions in low resolution spectra is therefore subject to errors.

Synthesis, characterization, and pulsed laser ablation of molecular sieves for thin film applications

NASA Astrophysics Data System (ADS)

Munoz, Trinidad, Jr.

1998-12-01

Molecular sieves are one class of crystalline low density metal oxides which are made up of one-, two-, and three dimensional pores and/or cages. We have investigated the synthesis and characterization of metal substituted aluminophosphates and all silica molecular sieves for thin film applications. A new copper substituted aluminophosphate, CuAPO-5 has been synthesized and characterized using x-ray powder diffraction, FT-IR spectroscopy and scanning electron microscopy. Electron spin resonance and electron spin echo modulation provided supporting evidence of framework incorporation of Cu(II) ions. Thus, an exciting addition has been added to the family of metal substituted aluminophosphates where substitution of the metal has been demonstrated as framework species. Also presented here is the synthesis and characterization of an iron substituted aluminophosphate, FeAPO-5, and an all silica zeolite, UTD-1 for thin film applications. Pulsed laser ablation has been employed as the technique to generate thin films. Here an excimer laser (KrFsp*, 248 nm) was used to deposit the molecular sieves on a variety of substrates including polished silicon, titanium nitride, and porous stainless steel disks. The crystallinity of the deposited films was enhanced by a post hydrothermal treatment. A vapor phase treatment of the laser deposited FeAPO-5 films has been shown to increase the crystallinity of the film without increasing film thickness. Thin films of the FeAPO-5 molecular sieves were subsequently used as the dielectric phase in capacitive type chemical sensors. The capacitance change of the FeAPO-5 devices to the relative moisture makes them potential humidity sensors. The all silica zeolite UTD-1 thin films were deposited on polished silicon and porous supports. A brief post hydrothermal treatment of the laser deposited films deposited on polished silicon and porous metal supports resulted in oriented film growth lending these films to applications in gas separations and catalysis. The oriented UTD-1 membrane was evaluated for the separation of n-heptane/toluene mixture. Practicum two. It has been previously observed that residual moisture plays a role in ETV-ICP-MS by altering signal intensity. Here is reported observed signal intensities with ETV-ICP-MS, resulting from the use of hydrogen, nitrogen and ascorbic acid. The use of ascorbic acid yielded enhanced signal intensity, reproducibility and linearity compared to inorganic modifiers'.

Spin-based diagnostic of nanostructure in copper phthalocyanine-C60 solar cell blends.

PubMed

Warner, Marc; Mauthoor, Soumaya; Felton, Solveig; Wu, Wei; Gardener, Jules A; Din, Salahud; Klose, Daniel; Morley, Gavin W; Stoneham, A Marshall; Fisher, Andrew J; Aeppli, Gabriel; Kay, Christopher W M; Heutz, Sandrine

2012-12-21

Nanostructure and molecular orientation play a crucial role in determining the functionality of organic thin films. In practical devices, such as organic solar cells consisting of donor-acceptor mixtures, crystallinity is poor and these qualities cannot be readily determined by conventional diffraction techniques, while common microscopy only reveals surface morphology. Using a simple nondestructive technique, namely, continuous-wave electron paramagnetic resonance spectroscopy, which exploits the well-understood angular dependence of the g-factor and hyperfine tensors, we show that in the solar cell blend of C(60) and copper phthalocyanine (CuPc)-for which X-ray diffraction gives no information-the CuPc, and by implication the C(60), molecules form nanoclusters, with the planes of the CuPc molecules oriented perpendicular to the film surface. This information demonstrates that the current nanostructure in CuPc:C(60) solar cells is far from optimal and suggests that their efficiency could be considerably increased by alternative film growth algorithms.

Ferromagnetic mechanism of (Co, Cu)-codoped ZnO films with different Co concentrations investigated by X-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Yuan, Huan; Du, Xiaosong; Xu, Ming

2016-05-01

Cobalt/copper-codoped ZnO nanoparticles, synthesized with different Co concentrations by a sol-gel method using ethanol as solvent, were studied via XPS. Hexagonal wurtzite structure was found in all samples, with no evidence of any secondary phase. The average crystallite size of the samples was around 20-30 nm, altered significantly with increasing Co concentration. Copper ions and Cobalt ions are indeed substituted into the ZnO lattice at the Zn2+ site, as shown by XRD and XPS. Further studies showed dramatic changes of Cu valence from +2 to +1 as the Co concentration level exceeds 1%, accompanied by a blue-shift of the optical bandgap from 3.01 to 3.13 eV. Ferromagnetism of the Co-doped Zn0.95Cu0.05O thin films was observed and found to be tunable - a phenomenon associated with the valence state of the Cu ions and the existence of some defects like oxygen vacancies in the films.

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

PubMed

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

Photovoltaic options for solar electric propulsion

NASA Technical Reports Server (NTRS)

Stella, Paul M.; Flood, Dennis J.

1990-01-01

This paper discusses both state-of-the-art and advanced development cell and array technology. Present technology includes rigid, roll-out, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is discussed based on both DOD efforts and NASA work. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency thin radiation resistant cells is examined. This includes gallium arsenide/germanium, indium phosphide, and thin film devices such as copper indium disclenide.

The interaction of atomic oxygen with copper: An XPS, AES, XRD, optical transmission, and stylus profilometry study

NASA Technical Reports Server (NTRS)

Raikar, Ganesh N.; Gregory, John C.; Christl, Ligia C.; Peters, Palmer N.

1993-01-01

The University of Alabama in Huntsville (UAH) experiment A-0114 was designed to study the reaction of material surfaces with low earth orbits (LEO) atmospheric oxygen. The experiment contained 128 one-inch circular samples; metals, polymers, carbons, and semiconductors. Half of these samples were exposed on the front of the Long Duration Exposure Facility (LDEF) and remaining on the rear. Among metal samples, copper has shown some interesting new results. There were two forms of copper samples: a thin film sputter-coated on fused silica and a solid piece of OFHC copper. They were characterized by x-ray and Auger electron spectroscopies, x-ray diffraction, and high resolution profilometry. Cu 2p core level spectra were used to demonstrate the presence of Cu2O and CuO and to determine the oxidation states.

Phase-dependent ultrafast third-order optical nonlinearities in metallophthalocyanine thin films

NASA Astrophysics Data System (ADS)

Kumar, Samir; Anil Kumar, K. V.; Dharmaprakash, S. M.; Das, Ritwick

2016-09-01

We present a comprehensive study on the impact of phase transformations of metallophthalocyanine thin films on their third-order nonlinear optical (NLO) properties. The metallophthalocyanine thin films are prepared by thermally evaporating the commercially available Copper(II)2,9,16,23-Tetra-tert-butyl-29H,31H-phthalocyanine (CuPc) and Zinc(II) 2,9,16,23-Tetra-tert-butyl-29H,31H-phthalocyanine (ZnPc) powder on glass substrate. Thermal annealing causes a phase transformation which has a distinct signature in powder X-ray diffraction and UV-Vis-NIR spectroscopy. The NLO characteristics which include nonlinear refractive index n2, as well as nonlinear absorption coefficient (βeff), were measured by using a single beam Z-scan technique. An ultrashort pulsed fiber laser emitting femtosecond pulses (Δτ ≈ 250 fs) at 1064 nm central wavelength is used as a source for the Z-scan experiment. The βeff values in as prepared thin films were ascertained to be smaller as compared to the annealed one due to the smaller value of saturation intensity (Is) which, in turn, is a consequence of ground-state bleaching in the thermally unstable amorphous state of the molecule. Interestingly, the nonlinear refractive indices bear opposite sign for CuPc and ZnPc. The variations in the third-order nonlinearity in CuPc and ZnPc are discussed in terms of molecular packing and geometries of metallophthalocyanine molecules.

Investigation of graphene-on-metal substrates for SPR-based sensor using finite-difference time domain.

PubMed

Said, Fairus Atida; Menon, Pulliyaseri Susthitha; Rajendran, Venkatachalam; Shaari, Sahbudin; Majlis, Burhanuddin Y

2017-12-01

In this study, the authors investigated the effects of a single layer graphene as a coating layer on top of metal thin films such as silver, gold, aluminum and copper using finite-difference time domain method. To enhance the resolution of surface plasmon resonance (SPR) sensor, it is necessary to increase the SPR reflectivity and decrease the full-width-half maximum (FWHM) of the SPR curve so that there is minimum uncertainty in the determination of the resonance dip. Numerical data was verified with analytical and experimental data where all the data were in good agreement with resonance angle differing in <10% due to noise present in components such as humidity and temperature. In further analysis, reflectivity and FWHM were compared among four types of metal with various thin film thicknesses where graphene was applied on top of the metal layers, and data was compared against pure conventional metal thin films. A 60 nm-thick Au thin film results in higher performance with reflectivity of 92.4% and FWHM of 0.88° whereas single layer graphene-on-60 nm-thick Au gave reflectivity of 91.7% and FWHM of 1.32°. However, a graphene-on-40 nm-thick Ag also gave good performance with narrower FWHM of 0.88° and reflection spectra of 89.2%.

Correlation Between Microstructure and Optical Properties of Cu (In0.7, Ga0.3) Se2 Grown by Electrodeposition Technique

NASA Astrophysics Data System (ADS)

Chihi, Adel; Bessais, Brahim

2017-01-01

Polycrystalline thin films Cu (In0.7, Ga0.3) Se2 (CIGSe) were grown on copper foils at various cathodic potentials by using an electrodeposition technique. Scanning electron microscopy showed that the average diameter of CIGSe grains increase from 0.1 μm to 1 μm when the cathodic potential decreases. The structure and surface morphology were investigated by x-ray diffraction and atomic force microscopy (AFM) techniques. This structure study shows that the thin films were well crystallized in a chalcopyrite structure without unwanted secondary phases with a preferred orientation along (112) plane. Energy-dispersive x-ray analyses confirms the existence of CIGSe single phase on a copper substrate. AFM analysis indicated that the root mean square roughness decreases from 64.28 to 27.42 when the potential deposition increases from -0.95 V to -0.77 V. Using Raman scattering spectroscopy, the A1 optical phonon mode was observed in 173 cm-1 and two other weak peaks were detected at 214 cm-1 and 225 cm-1 associated with the B2 and E modes of the CIGSe phase. Through spectroscopy ellipsometry analysis, a three-layer optical model was exploited to derive the optical properties and layer thickness of the CIGSe film by least-squares fitting the measured variation in polarization light versus the obtained microstructure.

The Impact of Morphology and Composition on the Resistivity and Oxidation Resistance of Metal Nanostructure Films

NASA Astrophysics Data System (ADS)

Stewart, Ian Edward

Printed electronics, including transparent conductors, currently rely on expensive materials to generate high conductivity devices. Conductive inks for thick film applications utilizing inkjet, aerosol, and screen printing technologies are often comprised of expensive and rare silver particles. Thin film applications such as organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs) predominantly employ indium tin oxide (ITO) as the transparent conductive layer which requires expensive and wasteful vapor deposition techniques. Thus an alternative to silver and ITO with similar performance in printed electronics warrants considerable attention. Copper nanomaterials, being orders of magnitude cheaper and more abundant than silver or indium, solution-coatable, and exhibiting a bulk conductivity only 6 % less than silver, have emerged as a promising candidate for incorporation in printed electronics. First, we examine the effect of nanomaterial shape on the conductivity of thick films. The inks used in such films often require annealing at elevated temperature in order to sinter the silver nanoparticles together and obtain low resistivities. We explore the change in morphology and resistivity that occurs upon heating thick films of silver nanowires (of two different lengths, Ag NWs), nanoparticles (Ag NPs), and microflakes (Ag MFs) deposited from water at temperatures between 70 and 400 °C. At the lowest temperatures, longer Ag NWs exhibited the lowest resistivity (1.8 x 10-5 O cm), suggesting that the resistivity of thick films of silver nanostructures is dominated by the contact resistance between particles. This result supported previous research showing that junction resistance between Ag NWs in thin film conductors also dominates optoelectronic performance. Since the goal is to replace silver with copper, we perform a similar analysis by using a pseudo-2D rod network modeling approach that has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire transparent conductors. In our analysis, we find that Cu NW-based transparent conductors are capable of achieving comparable electrical performance to Ag NW transparent conductors with similar dimensions. We also synthesize high aspect ratio Cu NWs (as high as 5700 in an aqueous based synthesis taking less than 30 minutes) and show that this increase in aspect ratio can result results in transparent conducting films with a transmittance >95% at a sheet resistance <100 O sq-1, optoelectronic properties similar to that for ITO. Two of the major barriers preventing the further use of Cu NWs in printed electronics are the necessity to anneal the nanowires under H2 at higher temperatures and copper's susceptibility to oxidation. The former issue is solved by removing the insulating oxide along the Cu NWs with acetic acid and pressing the nanowires together to make H2 annealing obsolete. Finally, several methods of preventing copper oxidation in the context of transparent conductors were successfully developed such as electroplating zinc, tin, and indium and electrolessly plating benzotriazole (BTAH), nickel, silver, gold, and platinum. While all of the shells lessened or prevented oxidation both in dry and humid conditions, it was found that a thin layer of silver confers identical optoelectronic properties to the Cu NWs as pure Ag NWs. These results are expected provide motivation to replace pure silver and ITO in printed electronics.

CdS thin film solar cells for terrestrial power

NASA Technical Reports Server (NTRS)

Shirland, F. A.

1975-01-01

The development of very low cost long lived Cu2S/CdS thin film solar cells for large scale energy conversion is reported. Excellent evaporated metal grid patterns were obtained using a specially designed aperture mask. Vacuum evaporated gold and copper grids of 50 lines per inch and 1 micron thickness were adequate electrically for the fine mesh contacting grid. Real time roof top sunlight exposure tests of encapsulated CdS cells showed no loss in output after 5 months. Accelerated life testing of encapsulated cells showed no loss of output power after 6 months of 12 hour dark-12 hour AMI illumination cycles at 40 C, 60 C, 80 C and 100 C temperatures. However, the cells changed their basic parameters, such as series and shunt resistance and junction capacitance.

Leading Solar Expertise-A Launch Pad to the Future - Continuum Magazine

Science.gov Websites

&D Magazine and identify each technology as one of the top 100 technological innovations of the 1996 for copper indium gallium diselenide (CIGS). One of the more popular thin-film solar cells to be of the world's first solar power towers-Solar One and Solar Two, shown here. CSP systems produce

Atomistic modeling of metallic thin films by modified embedded atom method

NASA Astrophysics Data System (ADS)

Hao, Huali; Lau, Denvid

2017-11-01

Molecular dynamics simulation is applied to investigate the deposition process of metallic thin films. Eight metals, titanium, vanadium, iron, cobalt, nickel, copper, tungsten, and gold, are chosen to be deposited on the aluminum substrate. The second nearest-neighbor modified embedded atom method potential is adopted to predict their thermal and mechanical properties. When quantifying the screening parameters of the potential, the error for Young's modulus and coefficient of thermal expansion between the simulated results and the experimental measurements is less than 15%, demonstrating the reliability of the potential to predict metallic behaviors related to thermal and mechanical properties. A set of potential parameters which governs the interactions between aluminum and other metals in a binary system is also generated from ab initio calculation. The details of interfacial structures between the chosen films and substrate are successfully simulated with the help of these parameters. Our results indicate that the preferred orientation of film growth depends on the film crystal structure, and the inter-diffusion at the interface is correlated the cohesive energy parameter of potential for the binary system. Such finding provides an important basis to further understand the interfacial science, which contributes to the improvement of the mechanical properties, reliability and durability of films.

Laboratory simulations of thermal annealing in proto-planetary discs - II. Crystallization of enstatite from amorphous thin films

NASA Astrophysics Data System (ADS)

Droeger, J.; Burchard, M.; Lattard, D.

2011-12-01

Amorphous silicates of olivine and pyroxene composition are thought to be common constituents of circumstellar, interstellar, and interplanetary dust. In proto-planetary discs amorphous dust crystallize essentially as a result of thermal annealing. The present project aims at deciphering the kinetics of crystallization pyroxene in proto-planetary dust on the basis of experiments on amorphous thin films. The thin films are deposited on Si-wafers (111) by pulsed laser deposition (PLD). The thin films are completely amorphous, chemically homogeneous (on the MgSiO3 composition) and with a continuous and flat surface. They are subsequently annealed for 1 to 216 h at 1073K and 1098K in a vertical quench furnace and drop-quenched on a copper block. To monitor the progress of crystallization, the samples are characterized by AFM and SEM imaging and IR spectroscopy. After short annealing durations (1 to 12 h) AFM and SE imaging reveal small shallow polygonal features (diameter 0.5-1 μm; height 2-3 nm) evenly distributed at the otherwise flat surface of the thin films. These shallow features are no longer visible after about 3 h at 1098 K, resp. >12 h at 1073 K. Meanwhile, two further types of features appear small protruding pyramids and slightly depressed spherolites. The orders of appearance of these features depend on temperature, but both persist and steadily grow with increasing annealing duration. Their sizes can reach about 12 μm. From TEM investigations on annealed thin films on the Mg2SiO4 composition we know that these features represent crystalline sites, which can be surrounded by a still amorphous matrix (Oehm et al. 2010). A quantitative evaluation of the size of the features will give insights on the progress of crystallization. IR spectra of the unprocessed thin films show only broad bands. In contrast, bands characteristic of crystalline enstatite are clearly recognizable in annealed samples, e.g. after 12 h at 1078 K. Small bands can also be assigned to crystalline forsterite. Compared to the findings of Murata et al. (2009), our preliminary results point to smaller crystallization rates of enstatite from amorphous precursors.

Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

NASA Astrophysics Data System (ADS)

Sainju, Deepak

Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the intrinsic temperature dependence of these properties and parameters. One of the major achievements of this dissertation research is the characterization of the thickness and optical properties of the interface layer formed between the silver and zinc oxide layers in a back-reflector structure used in thin film photovoltaics. An understanding of the impact of these thin film material properties on solar cell device performance has been complemented by applying reflectance and transmittance spectroscopy as well as simulations of cell performance.

The Effect of Gravity Axis Orientation on the Growth of Phthalocyanine Thin Films

NASA Technical Reports Server (NTRS)

Pearson, Earl F.

1996-01-01

Experimentally, many of the functions of electrical circuits have been demonstrated using optical circuits and, in theory, all of these functions may be accomplished using optical devices made of nonlinear optical materials. Actual construction of nonlinear optical devices is one of the most active areas in all optical research being done at this time. Physical vapor transport (PVT) is a promising technique for production of thin films of a variety of organic and inorganic materials. Film optical quality, orientation of microcrystals, and thickness depends critically on type of material, pressure of buffer gas and temperature of deposition. An important but understudied influence on film characteristics is the effect of gravity-driven buoyancy. Frazier, Hung, Paley, Penn and Long have recently reported mathematical modelling of the vapor deposition process and tested the predictions of the model on the thickness of films grown by PVT of 6-(2-methyl-4-nitroanilino)-2,4-hexadiyn-l-ol (DAMNA). In an historic experiment, Debe, et. al. offered definitive proof that copper phthalocyanine films grown in a low gravity environment are denser and more ordered than those grown at 1 g. This work seeks to determine the influence on film quality of gravity driven buoyancy in the low pressure PVT film growth of metal-free phthalocyanine.

Variation of magnetoimpedance of electrodeposited NiFe/Cu with deposition current density

NASA Astrophysics Data System (ADS)

Mishra, A. C.; Jha, A. K.

2017-12-01

An investigation about influence of deposition current density on electrodeposited magnetic film is reported in this paper. Ferromagnetic NiFe thin films were electrodeposited on copper wires of 100 μm diameter for various electrdepostion current densities ranging from 10 to 60 mA/cm2 maintaining equal thickness in all films. The composition of deposited film varied with deposition current density and in particular, a composition of Ni79Fe21 was achieved for a current density of 20 mA/cm2. The surface microstructure of the film deposited at the current density of 20 mA/cm2 was found to have excellent smoothness. The coercivity of the film was lowest and highest value of magnetoimpedance was measured for this film. The influence of current density on film composition and hence magnetic properties was attributed to the change of deposition mechanism.

Investigations of spherical Cu NPs in sodium lauryl sulphate with Tb{sup 3+} ions dispersed in PVA films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Brijesh; Kaur, Gagandeep, E-mail: gagandeep_bhu@yahoo.com; Rai, S.B., E-mail: sbrai49@yahoo.co.in

2016-03-15

Highlights: • Cu NPs were prepared in SDS using 1064 nm laser radiation at fluence 37, 64 and 88 J/cm{sup 2}. • Spherical Cu NPs with average diameter varying between 10 and 50 nm atdifferent fluence. • PL of Tb3+ ions in PVA polymer film is maximum with Cu NPS at fluence 37 J/cm{sup 2}. • PVA films of Cu NPs displayed a highly temperature-dependent electrical conductivity. • These copper NPs embedded PVA films can be used as novel, low-cost sensor materials. - Abstract: Cu nanoparticles (NPs) have been prepared in SDS solution using 1064 nm laser radiation at differentmore » fluence 37 J/cm{sup 2}, 64 J/cm{sup 2} and 88 J/cm{sup 2} and structurally characterized. The TEM measurements reveal the presence of nanoparticles of spherical shape with different size. The size of the nanoparticles and their concentration increases with the increase of fluence.The effect of these Cu nanoparticles on the emissive properties of Tb{sup 3+} ion in polymer films has been studied. It is found that emission intensity of Tb{sup 3+} first increases and then deceases both with concentration of Cu NPs as well as with sizes. The PL intensity of Tb{sup 3+} ions is minimum for Cu NPs prepared with highest fluence. It has been explained in term of local field effect. This was also verified by life time measurements. These thin PVA films of copper nanoparticles displayed a highly temperature-dependent electrical conductivity with sensitivity at least comparable to commercial materials which suggest the use of these copper NPs embedded PVA films as novel, low-cost sensor materials.« less

Studies of the synthesis and deposition of Cu3BiS 3 for use in photovoltaic devices

NASA Astrophysics Data System (ADS)

Epstein, Joshua A.

As the world's climate continues to change, alternative energy is being adopted more and more. Solar energy is one extremely promising candidate to supplement our ever increasing energy needs. In order for it to be a viable solution, more efficient and less expensive solar panels must be made. While silicon solar panels are the current market leader their high manufacturing energy input and cost warrant looking into alternatives. Many thin film solar materials are being investigated such as CdTe, CIGS and CZTS, but all come with their own drawbacks. With a near ideal band gap, low toxicity and earth abundant elemental make up copper bismuth sulfide, Cu3BiS3, is a promising candidate for use in future photovoltaic devices. The research presented here details multiple methods to synthesize and deposit this material with an effort to keep the methods low cost, energy efficient and environmentally friendly. Multiple low temperature solvothermal routes to synthesizing copper bismuth sulfide, CBS, have been developed. The resulting powders have been verified as pure Cu3BiS3 via XRD peak matching. The precursor reactants tested for use were copper and bismuth nitrates, acetates, chlorides and hydroxides. L-cystine, L-cysteine, thiourea and CS2 have all been tested for use as sulfur sources. Seven of these combinations produced pure CBS powders. Two custom built benchtop reactors have been designed and fabricated with the aim of studying the possibility of a continuous flow reactor as a way to utilize these precipitation chemistries for making thin films of CBS. Heat and liquid flow simulations were performed in COMSOL multiphysics to assist in the reactor design process. The second reactor was designed to promote uniform liquid flow across the fluorine doped, tin oxide coated, FTO, glass. This reactor was also built with a temperature gradient transverse to the liquid flow so that the optimal temperature for the deposition of CBS could be evaluated. This reactor was also used to evaluate the deposition of CdS, an n-type semiconductor often used in thin film solar panels, onto FTO glass. CBS thin films were also prepared via electrodeposition and thermal treatment. The solution used was a mixture of copper nitrate, sodium sulfite and sodium citrate tribasic dihydrate dissolved in DI H2O and bismuth nitrate dissolved in ethylene glycol. To get the best coating it was found that the electrodeposition should be done at 1.2 V and last 5 minutes. Thermal treatment carried out in a 450°C tube furnace for 90 min in forming gas (95% N2 with 5% H2) along with sulfur vapor was proved best. No further treatment was required to obtain phase pure CBS coatings. This was verified with XRD peak analysis. Optical absorption, microstructural, and photoconductivity data are reported for CBS materials made using the above techniques.

Effects of length dispersity and film fabrication on the sheet resistance of copper nanowire transparent conductors

NASA Astrophysics Data System (ADS)

Borchert, James W.; Stewart, Ian E.; Ye, Shengrong; Rathmell, Aaron R.; Wiley, Benjamin J.; Winey, Karen I.

2015-08-01

Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire TCs. In our analysis, we find that the copper nanowire TCs are capable of achieving comparable electrical performance to silver nanowire TCs with similar dimensions. Lastly, we present a method for more accurately determining the nanowire area coverage in a TC over a large area using Rutherford Backscattering Spectrometry (RBS) to directly measure the metal content in the TCs. These developments will aid research and industry groups alike in the characterization of nanowire based TCs.Development of thin-film transparent conductors (TC) based on percolating networks of metal nanowires has leaped forward in recent years, owing to the improvement of nanowire synthetic methods and modeling efforts by several research groups. While silver nanowires are the first commercially viable iteration of this technology, systems based on copper nanowires are not far behind. Here we present an analysis of TCs composed of copper nanowire networks on sheets of polyethylene terephthalate that have been treated with various oxide-removing post treatments to improve conductivity. A pseudo-2D rod network modeling approach has been modified to include lognormal distributions in length that more closely reflect experimental data collected from the nanowire TCs. In our analysis, we find that the copper nanowire TCs are capable of achieving comparable electrical performance to silver nanowire TCs with similar dimensions. Lastly, we present a method for more accurately determining the nanowire area coverage in a TC over a large area using Rutherford Backscattering Spectrometry (RBS) to directly measure the metal content in the TCs. These developments will aid research and industry groups alike in the characterization of nanowire based TCs. Electronic supplementary information (ESI) available: Contains calibration curve for %T vs. area fraction. See DOI: 10.1039/c5nr03671b

Pulsed laser micro-scribing of copper thin films on polyimide substrate in NaCl solution

NASA Astrophysics Data System (ADS)

Shiby, Sooraj; Nammi, Srinagalakshmi; Vasa, Nilesh J.; Krishnan, Sivarama

2018-02-01

Recently, there is an increasing interest to create micro-channels on metal thin films for diverse applications, such as biomedical, micro channel heat exchangers, chemical separation processes and microwave antenna. Nanosecond (ns) Nd3+:YAG laser has been studied for generating micro-channels on Cu thin film (35 μm) deposited on polyimide substrate (50 μm). A pulsed Nd3+:YAG laser (532 nm / 355 nm) based scribing was performed in air and water ambiancePlasma shielding phenomenon is observed to influence the depth of microchannel at higher energies. A novel pump-probe experiment has been conducted for verifying the plasma shielding effect in air. In underwater scribing the recast layer was reduced significantly as compared to that in air. Laser scribing of Cu thin film followed by chemical etching using FeCl3 was studied. However, the approach of chemical etching resulted in undercut and thinning of Cu film. Alternatively, laser material processing in NaCl solution was studied. Cl- ions present in the solution reacts with Cu which is removed from the sample via laser ablation and forms CuCl2. Formation of CuCl2 in turn improved the surface morphology of the channel through localized etching. The surface roughness parameter Ra was less than 400 nm for NaCl solution based scribing which is smaller compared to air and underwater based methods which are typically around 800 nm or above. Preliminary studies using femtosecond (fs) laser based Cu scribing in air with the fluence of 0.5 J/cm2 resulted in a crated depth of 3 μm without any recast layer.

Synthesis and Characterization of Phase-pure Copper Zinc Tin Sulfide (Cu2ZnSnS4) Nanoparticles

NASA Astrophysics Data System (ADS)

Monahan, Bradley Michael

Semiconductor nanoparticles have been an important area of research in many different disciplines. A substantial amount of this work has been put toward advancing the field of photovoltaics. However, current p-type photovoltaic materials can not sustain the large scale production needed for future energy demands due to their low elemental abundance. Therefore, Earth abundant semiconductor materials have become of great interest to the photovoltaic community especially, the material copper zinc tin sulfide (CZTS), also known by its mineral name kesterite. CZTS exhibits desirable properties for photovoltaics, such as elemental abundance, high absorption coefficient (~104 cm-1 ), high carrier concentration, and optimum direct band gap (1.5 eV). To date, solution based approaches for making CZTS have yielded the most promising conversion efficiencies in solar cells. To that end, the motivation of nanoparticle based inks that can be used in high throughput production are an attractive route for large scale deployment. This has driven the need to make high quality CZTS nanoparticles that possess the properties of the pure kesterite phase with high monodispersity that can be deposited into dense thin films. The inherent challenge of making a quaternary compound of a single phase has made this a difficult task; however, some of those fundamental problems are addressed in this thesis. This had resulted in the synthesis of phase-pure k-CZTS confirmed by powder X-ray diffraction, Raman spectroscopy, UV-visible absorption spectroscopy and energy dispersive x-ray spectroscopy. Furthermore, ultra-fast laser spectroscopy was done on CZTS thin films made from phase-pure kesterite nanoparticles synthesized in this work. This thesis provides new data that directly probes the lifetime of photogenerated free carriers in kesterite CZTS (k-CZTS) thin films.

Solution-deposited CIGS thin films for ultra-low-cost photovoltaics

NASA Astrophysics Data System (ADS)

Eldada, Louay A.; Hersh, Peter; Stanbery, Billy J.

2010-09-01

We describe the production of photovoltaic modules with high-quality large-grain copper indium gallium selenide (CIGS) thin films obtained with the unique combination of low-cost ink-based precursors and a reactive transfer printing method. The proprietary metal-organic inks contain a variety of soluble Cu-, In- and Ga- multinary selenide materials; they are called metal-organic decomposition (MOD) precursors, as they are designed to decompose into the desired precursors. Reactive transfer is a two-stage process that produces CIGS through the chemical reaction between two separate precursor films, one deposited on the substrate and the other on a printing plate in the first stage. In the second stage, these precursors are rapidly reacted together under pressure in the presence of heat. The use of two independent thin films provides the benefits of independent composition and flexible deposition technique optimization, and eliminates pre-reaction prior to the synthesis of CIGS. In a few minutes, the process produces high quality CIGS films, with large grains on the order of several microns, and preferred crystallographic orientation, as confirmed by compositional and structural analysis by XRF, SIMS, SEM and XRD. Cell efficiencies of 14% and module efficiencies of 12% were achieved using this method. The atmospheric deposition processes include slot die extrusion coating, ultrasonic atomization spraying, pneumatic atomization spraying, inkjet printing, direct writing, and screen printing, and provide low capital equipment cost, low thermal budget, and high throughput.

Processing of sputter targets using current activated pressure assisted densification

NASA Astrophysics Data System (ADS)

Chaney, Neil Russell

Thin Film deposition is a process that has been around since the beginning of the twentieth century and has become an integral part of the microfabrication and nanofabrication industries. Sputter deposition is a method of physical vapor deposition (PVD) in which a target is bombarded with ions and atoms are ejected and deposited as a thin film on a substrate. Despite extensive research on the direct process of sputtering thin films from targets to substrates, not much work has been done on studying the effect of processing on the microstructure of a target. In the first part of this work, the development of a PVD chamber is explored along with a few modifications and improvements developed along the way. A multiple process PVD chamber was equipped with three different types of PVD processes: sputtering, evaporation, and electron-beam deposition. In the second part of this work, the effect of processing of sputter targets on deposited films is explored. Multiple targets of Copper and yttria stabilized zirconia were produced using CAPAD. The effect of the processing on the microstructure of the targets was determined. The targets were then sputtered into films to study the effects of the target grain size on their properties. The effect of power and pressure were also measured. Increased power led to increased deposition rates while higher vacuum caused deposition rates to decrease.

Superconducting thin films of Bi-Sr-Ca-Cu-O by laser ablation

NASA Astrophysics Data System (ADS)

Bedekar, M. M.; Safari, A.; Wilber, W.

1992-11-01

Superconducting thin films of Bi-Sr-Ca-Cu-O have been deposited by KrF excimer laser ablation. The best in situ films showed a Tc onset of 110 K and a Tc(0) of 76 K. A study of the laser plume revealed the presence of two distinct regimes. The forward directed component increased with fluence and the film composition was stoichiometric in this region. This is in agreement with the results on the 123 system by Venkatesan et al. [1]. The film properties were found to be critically dependent on the substrate temperature and temperatures close to melting gave rise to 2212 and 2223 phases. At lower temperatures, 2201 and amorphous phases were obtained. The film morphology and superconducting properties were a function of the target to substrate distance and the oxygen pressure during deposition and cooling. An increase in the target to substrate distance led to a deterioration of the properties due to the energy consideration for the formation of 2212 and 2223 phases. The best films were obtained using cooling pressures of 700 Torr. The microwave surface resistance of the films measured at 35 GHz dropped below that of copper at 30 K. Film growth was studied using X-ray diffraction and STM/AFM. This work is a discussion of the role of the different variables on the film properties.

Experimental study of the spatial distributions of relativistic electron beams reflected and refracted by a thin foil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serov, A. V., E-mail: serov@x4u.lebedev.ru; Mamonov, I. A.

2016-08-15

Photographs of cross sections of an electron beam scattered from thin foils have been obtained on a dosimetric film. The procession of images makes it possible to obtain the spatial distribution of particles both reflected from a foil and passed through it. The spatial distribution of electrons incident on aluminum, copper, and lead foils, as well as on bimetallic foils composed of aluminum and lead layers and of aluminum and copper layers, has been measured. The effect of the material and thickness of the foil, as well as of the angle between the initial beam trajectory and the target plane,more » on the spatial distribution of electrons has been studied. The effect of the sequence of the metal layers in bimetallic foils on the distribution of beams has been analyzed. A 7.4-MeV microtron has been used as a source of electrons.« less

Laboratory studies on biomachining of copper using Staphylococcus sp.

PubMed

Shikata, Shinji; Sreekumari, Kurissery R; Nandakumar, Kanavillil; Ozawa, Mazayoshi; Kikuchi, Yasushi

2009-01-01

The possibility of using bacteria to drill metallic surfaces has been demonstrated using Staphylococcus sp., a facultative anaerobic bacterium, isolated from corroded copper piping. The experiment involved exposure of copper coupons (25 mm x 15 mm x 3 mm) to a culture of Staphylococcus sp. for a maximum period of 7 days. Coupons exposed to sterile bacterial growth medium were used as controls. Exposed coupons were removed intermittently and observed microscopically for the extent of drilling. The total pit area and volume on these coupons were determined using image analysis. The results showed that both the biomachined area and volume increased with the duration of coupon exposure. In the drilling experiment, a copper thin film 2 microm thick was perforated by this bacterium within a period of 7 days. In conclusion, the results suggested that bacteria can be used as a tool for machining metallic surfaces.

Measurement of labile copper in wine by medium exchange stripping potentiometry utilising screen printed carbon electrodes.

PubMed

Clark, Andrew C; Kontoudakis, Nikolaos; Barril, Celia; Schmidtke, Leigh M; Scollary, Geoffrey R

2016-07-01

The presence of copper in wine is known to impact the reductive, oxidative and colloidal stability of wine, and techniques enabling measurement of different forms of copper in wine are of particular interest in understanding these spoilage processes. Electrochemical stripping techniques developed to date require significant pretreatment of wine, potentially disturbing the copper binding equilibria. A thin mercury film on a screen printed carbon electrode was utilised in a flow system for the direct analysis of labile copper in red and white wine by constant current stripping potentiometry with medium exchange. Under the optimised conditions, including an enrichment time of 500s and constant current of 1.0μA, the response range was linear from 0.015 to 0.200mg/L. The analysis of 52 red and white wines showed that this technique generally provided lower labile copper concentrations than reported for batch measurement by related techniques. Studies in a model system and in finished wines showed that the copper sulfide was not measured as labile copper, and that loss of hydrogen sulfide via volatilisation induced an increase in labile copper within the model wine system. Copyright © 2016 Elsevier B.V. All rights reserved.

Selective nucleation of iron phthalocyanine crystals on micro-structured copper iodide.

PubMed

Rochford, Luke A; Ramadan, Alexandra J; Heutz, Sandrine; Jones, Tim S

2014-12-14

Morphological and structural control of organic semiconductors through structural templating is an efficient route by which to tune their physical properties. The preparation and characterisation of iron phthalocyanine (FePc)-copper iodide (CuI) bilayers at elevated substrate temperatures is presented. Thin CuI(111) layers are prepared which are composed of isolated islands rather than continuous films previously employed in device structures. Nucleation in the early stages of FePc growth is observed at the edges of islands rather than on the top (111) faces with the use of field emission scanning electron microscopy (FE-SEM). Structural measurements show two distinct polymorphs of FePc, with CuI islands edges nucleating high aspect ratio FePc crystallites with modified intermolecular spacing. By combining high substrate temperature growth and micro-structuring of the templating CuI(111) layer structural and morphological control of the organic film is demonstrated.

Metal sulfide thin films by chemical spray pyrolysis

NASA Astrophysics Data System (ADS)

Krunks, Malle; Mellikov, Enn

2001-04-01

CdS, ZnS and CuS thin films were prepared by spray pyrolysis method using metal chlorides and thiourea (tu) as starting materials. Metal sulfide films form as products of thermal decomposition of complexes Cd(tu)2Cl2, Zn(tu)2Cl2 and Cu(tu)Cl(DOT)1/2H2O, originally formed in aqueous solution at precursors molar ratio 1:2. The metal-ligand bonding is thermally stable up to 220 degrees Celsius, followed by multistep degradation process of complexes. The TG/DTA analysis show similar thermal behavior of complexes up to 300 degrees Celsius with the formation of metal sulfides in this decomposition step. In air intensive oxidation processes are detected close to 400, 600 and 720 degrees Celsius for Cu, Cd and Zn complexes, respectively. The results of thermoanalytical study and XRD of sprayed films show that CdS and ZnS films could be grown at 450 degrees Celsius even in air while deposition of copper sulfide films should be performed in an inert atmosphere. High total impurities content of 10 wt% in CdS films prepared at 240 degrees Celsius is originated from the precursor and reduced to 2 wt% by increasing the growth temperature up to 400 degrees Celsius.

A load-lock compatible system for in situ electrical resistivity measurements during thin film growth.

PubMed

Colin, J J; Diot, Y; Guerin, Ph; Lamongie, B; Berneau, F; Michel, A; Jaouen, C; Abadias, G

2016-02-01

An experimental setup designed for in situ electrical resistance measurement during thin film growth is described. The custom-built sample holder with a four-point probe arrangement can be loaded into a high-vacuum magnetron sputter-deposition chamber through a load-lock transfer system, allowing measurements on series of samples without venting the main chamber. Electrical contact is ensured with circular copper tracks inserted in a Teflon plate on a mounting holder station inside the deposition chamber. This configuration creates the possibility to measure thickness-dependent electrical resistance changes with sub-monolayer resolution and is compatible with use of sample rotation during growth. Examples are presented for metallic films with high adatom mobility growing in a Volmer-Weber mode (Ag and Pd) as well as for refractory metal (Mo) with low adatom mobility. Evidence for an amorphous-to-crystalline phase transition at a film thickness of 2.6 nm is reported during growth of Mo on an amorphous Si underlayer, supporting previous findings based on in situ wafer curvature measurements.

Low-Energy, Hydrogen-Free Method of Diamond Synthesis

NASA Technical Reports Server (NTRS)

Varshney, Deepak (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor); Makarov, Vladimir (Inventor)

2013-01-01

Diamond thin films were deposited on copper substrate by the Vapor Solid (VS) deposition method using a mixture of fullerene C(sub 60) and graphite as the source material. The deposition took place only when the substrate was kept in a narrow temperature range of approximately 550-650 C. Temperatures below and above this range results in the deposition of fullerenes and other carbon compounds, respectively.

Dynamic High-Pressure Behavior of Hierarchical Heterogeneous Geological Materials

DTIC Science & Technology

2016-04-01

sandwiched between two 25µm FEP copolymer layers attached to the copper driver plate . The total package thickness with thin-film epoxy on all bonding...public release. 3 OUTLINE Page # ABSTRACT 2 1. BACKGROUND 4 2. CHARACTERISTICS OF SAND INVESTIGATED 8 3. PLATE ...constituents, phases, inter-phase boundaries ; distributions in shock states; as well as the structural evolutions which can result in strain

Laser Structuring of Thin Layers for Flexible Electronics by a Shock Wave-induced Delamination Process

NASA Astrophysics Data System (ADS)

Lorenz, Pierre; Ehrhardt, Martin; Zimmer, Klaus

The defect-free laser-assisted structuring of thin films on flexible substrates is a challenge for laser methods. However, solving this problem exhibits an outstanding potential for a pioneering development of flexible electronics. Thereby, the laser-assisted delamination method has a great application potential. At the delamination process: the localized removal of the layer is induced by a shock wave which is produced by a laser ablation process on the rear side of the substrate. In this study, the thin-film patterning process is investigated for different polymer substrates dependent on the material and laser parameters using a KrF excimer laser. The resultant structures were studied by optical microscopy and white light interferometry (WLI). The delamination process was tested at different samples (indium tin oxide (ITO) on polyethylene terephthalate (PET), epoxy-based negative photoresist (SU8) on polyimide (PI) and indium tin oxide/copper indium gallium selenide/molybdenum (ITO/CIGS/Mo) on PI.

Auger spectroscopy analysis of lubrication with zinc dialkyldithiophosphate of several metal combinations in sliding contact

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1979-01-01

Sliding friction experiments were conducted with aluminum and other riders rubbing on disks of various elemental metals in the presence of a thin film of zinc dialkyldithiophosphate (ZDP). Auger emission spectroscopy was used to in situ monitor the changes in surface chemistry with rubbing under various loads. The metal disks examined included iron, titanium, rhodium, tungsten, molybdenum, and copper. For equivalent films of ZDP the film is a more effective lubricant for some metals than it is for others. The important active element in the compound varies with the metal lubricated and is a function of metal chemistry. The zinc in the ZDP is susceptible to electron beam induced desorption.

Thin-Film Solar Cells on Metal Foil Substrates for Space Power

NASA Technical Reports Server (NTRS)

Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

2004-01-01

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Once the technology has gained spaceflight certification it should find rapid acceptance in specific satellite markets.

New designs and characterization techniques for thin-film solar cells

NASA Astrophysics Data System (ADS)

Pang, Yutong

This thesis presents a fundamentally new thin-film photovoltaic design and develops several novel characterization techniques that improve the accuracy of thin-film solar cell computational models by improving the accuracy of the input data. We first demonstrate a novel organic photovoltaic (OPV) design, termed a "Slot OPV", in which the active layer is less than 50 nm; We apply the principles of slot waveguides to confine light within the active layer. According to our calculation, the guided-mode absorption for a 10nm thick active layer equal to the absorption of normal incidence on an OPV with a 100nm thick active layer. These results, together with the expected improvement in charge extraction for ultrathin layers, suggest that slot OPVs can be designed with greater power conversion efficiency than today's state-of-art OPV architectures if practical challenges, such as the efficient coupling of light into these modes, can be overcome. The charge collection probability, i.e. the probability that charges generated by absorption of a photon are successfully collected as current, is a critical feature for all kinds of solar cells. While the electron-beam-induced current (EBIC) method has been used in the past to successfully reconstruct the charge collection probability, this approach is destructive and requires time-consuming sample preparation. We demonstrate a new nondestructive optoelectronic method to reconstruct the charge collection probability by analyzing the internal quantum efficiency (IQE) data that are measured on copper indium gallium diselenide (CIGS) thin-film solar cells. We further improve the method with a parameter-independent regularization approach. Then we introduce the Self-Constrained Ill-Posed Inverse Problem (SCIIP) method, which improves the signal-to-noise of the solution by using the regularization method with system constraints and optimization via an evolutionary algorithm. For a thin-film solar cell optical model to be an accurate representation of reality, the measured refractive index profile of the solar cell used as input to the model must also be accurate. We describe a new method for reconstructing the depth-dependent refractive-index profile with high spatial resolution in thin photoactive layers. This novel technique applies to any thin film, including the photoactive layers of a broad range of thin-film photovoltaics. Together, these methods help us improve the measurement accuracy of the depth profile within thin-film photovoltaics for optical and electronic properties such as refractive index and charge collection probability, which is critical to the understanding, modeling, and optimization of these devices.

Structural and Solar Cell Properties of a Ag-Containing Cu2ZnSnS4 Thin Film Derived from Spray Pyrolysis.

PubMed

Nguyen, Thi Hiep; Kawaguchi, Takato; Chantana, Jakapan; Minemoto, Takashi; Harada, Takashi; Nakanishi, Shuji; Ikeda, Shigeru

2018-02-14

A silver (Ag)-incorporated kesterite Cu 2 ZnSnS 4 (CZTS) thin film was fabricated by a facile spray pyrolysis method. Crystallographic analyses indicated successful incorporation of various amounts of Ag up to a Ag/(Ag + Cu) ratio of ca. 0.1 into the crystal lattice of CZTS in a homogeneous manner without formation of other impurity compounds. From the results of morphological investigations, Ag-incorporated films had larger crystal grains than the CZTS film. The sample with a relatively low Ag content (Ag/(Ag + Cu) of ca. 0.02) had a compact morphology without appreciable voids and pinholes. However, an increase in the Ag content in the CZTS film (Ag/(Ag + Cu) ca. 0.10) induced the formation of a large number of pinholes. As can be expected from these morphological properties, the best sunlight conversion efficiency was obtained by the solar cell based on the film with Ag/(Ag + Cu) of ca. 0.02. Electrostructural analyses of the devices suggested that the Ag-incorporated film in the device achieved reduction in the amounts of unfavorable copper on zinc antisite defects compared to the bare CZTS film. Moreover, the use of a Ag-incorporated film improved band alignment at the CdS(buffer)-CZTS interface. These alterations should also contribute to enhancement of device properties.

Structural, optical and electronic properties of indium sulfide compositions under influence of copper impurity produced by chemical method

NASA Astrophysics Data System (ADS)

Esmaili, Parisa; Kangarlou, Haleh; Savaloni, Hadi; Ghorannevis, Mahmood

Aqueous solutions with 70 °C and pH = 2.5 constant values were prepared from convenient chemical compounds to produce In2S3: Cu crystals and thin films. Crystal compositions were grown in this solution under special conditions. Micrographs showed amorphous In2S3 orange powder and transparent vitreous pieces of CuInS2 crystals. Indium sulfide films were produced using the same solution in CBD method, on the glass substrates at different [Cu/In] molar ratio concentrations. Cu+ ions by different concentration doped from copper chloride source into In2S3 films. The produced films were post-annealed at 400 °C for about 1 h. Their crystallography, phase transitions, element analysis and nanostructures were investigated by X-ray diffraction, SEM, EDAX and AFM analyses. β-In2S3 phase was dominant and by doping copper impurity, XRD results suggested the formation of CuInS2 compositions. Morphology of the films, nano-structures, grain shapes and hardness was changed. Optical reflectance was measured in the UV-VIS wavelength range by a spectrophotometer. Other optical properties and optical band gaps were calculated using Kramers-Kronig relations on reflectivity curves. Electronic properties were calculated by full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). In this approach, generalized gradient approximation (GGA) was used for the exchange-correlation potential calculation. Band gap structures, density of states and imaginary parts of dielectric function were calculated for In2S3: Cu compositions.

Inorganic Photovoltaics Materials and Devices: Past, Present, and Future

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Bailey, Sheila G.; Rafaelle, Ryne P.

2005-01-01

This report describes recent aspects of advanced inorganic materials for photovoltaics or solar cell applications. Specific materials examined will be high-efficiency silicon, gallium arsenide and related materials, and thin-film materials, particularly amorphous silicon and (polycrystalline) copper indium selenide. Some of the advanced concepts discussed include multi-junction III-V (and thin-film) devices, utilization of nanotechnology, specifically quantum dots, low-temperature chemical processing, polymer substrates for lightweight and low-cost solar arrays, concentrator cells, and integrated power devices. While many of these technologies will eventually be used for utility and consumer applications, their genesis can be traced back to challenging problems related to power generation for aerospace and defense. Because this overview of inorganic materials is included in a monogram focused on organic photovoltaics, fundamental issues and metrics common to all solar cell devices (and arrays) will be addressed.

Synthesis, Deposition, and Microstructure Development of Thin Films Formed by Sulfidation and Selenization of Copper Zinc Tin Sulfide Nanocrystals

NASA Astrophysics Data System (ADS)

Chernomordik, Boris David

Significant reduction in greenhouse gas emission and pollution associated with the global power demand can be accomplished by supplying tens-of-terawatts of power with solar cell technologies. No one solar cell material currently on the market is poised to meet this challenge due to issues such as manufacturing cost, material shortage, or material toxicity. For this reason, there is increasing interest in efficient light-absorbing materials that are comprised of abundant and non-toxic elements for thin film solar cell. Among these materials are copper zinc tin sulfide (Cu2ZnSnS4, or CZTS), copper zinc tin selenide (Cu2ZnSnSe4, or CZTSe), and copper zinc tin sulfoselenide alloys [Cu2ZnSn(SxSe1-x )4, or CZTSSe]. Laboratory power conversion efficiencies of CZTSSe-based solar cells have risen to almost 13% in less than three decades of research. Meeting the terawatt challenge will also require low cost fabrication. CZTSSe thin films from annealed colloidal nanocrystal coatings is an example of solution-based methods that can reduce manufacturing costs through advantages such as high throughput, high material utilization, and low capital expenses. The film microstructure and grain size affects the solar cell performance. To realize low cost commercial production and high efficiencies of CZTSSe-based solar cells, it is necessary to understand the fundamental factors that affect crystal growth and microstructure evolution during CZTSSe annealing. Cu2ZnSnS4 (CZTS) nanocrystals were synthesized via thermolysis of single-source cation and sulfur precursors copper, zinc and tin diethyldithiocarbamates. The average nanocrystal size could be tuned between 2 nm and 40 nm, by varying the synthesis temperature between 150 °C and 340 °C. The synthesis is rapid and is completed in less than 10 minutes. Characterization by X-ray diffraction, Raman spectroscopy, transmission electron microscopy and energy dispersive X-ray spectroscopy confirm that the nanocrystals are nominally stoichiometric kesterite CZTS. The ~2 nm nanocrystals synthesized at 150 °C exhibit quantum confinement, with a band gap of 1.67 eV. Larger nanocrystals have the expected bulk CZTS band gap of 1.5 eV. Several micron thick films deposited by drop casting colloidal dispersions of ~40 nm CZTS nanocrystals were crack-free, while those cast using 5 nm nanocrystals had micron-scale cracks. We showed the applicability of these nanocrystal coatings for thin film solar cells by demonstrating a CZTS thin film solar cell using coatings annealed in a sulfur atmosphere. We conducted a systematic study of the factors controlling crystal growth and microstructure development during sulfidation annealing of films cast from colloidal dispersions of CZTS nanocrystals. The film microstructure is controlled by concurrent normal and abnormal grain growth. At 600 °C to 800 °C and low sulfur pressures (50 Torr), abnormal CZTS grains up to 10 microm in size grow on the surface of the CZTS nanocrystal film via transport of material from the nanocrystals to the abnormal grains. Meanwhile, the nanocrystals coarsen, sinter, and undergo normal grain growth. The driving force for abnormal grain growth is the reduction in total energy associated with the high surface area nanocrystals. The eventual coarsening of the CZTS nanocrystals reduces the driving force for abnormal crystal growth. Increasing the sulfur pressure by an order of magnitude to 500 Torr accelerates both normal and abnormal crystal growth though sufficient acceleration of the former eventually reduces the latter by reducing the driving force for abnormal grain growth. For example, at high temperatures (700-800 oC) and sulfur pressures (500 Torr) normal grains quickly grow to ~500 nm which significantly reduces abnormal grain growth. The use of soda lime glass as the substrate, instead of quartz, accelerates normal grain growth. Normal grains grow to ~500 nm at lower temperatures and sulfur pressures (i.e., 600 °C and 50 Torr) than those required to grow the same size grains on quartz (700 °C and 500 Torr). Moreover, carbon is removed by volatilization from films where normal crystal growth is fast. There are significant differences in the chemistry and in the thermodynamics involved during selenization and sulfidation of CZTS colloidal nanocrystal coatings to form CZTSSe or CZTS thin films, respectively. To understand these differences, the roles of vapor pressure, annealing temperature, and heating rate in the formation of different microstructures of CZTSSe films were investigated. Selenization produced a bi-layer microstructure where a large CZTSSe-crystal layer grew on top of a nanocrystalline carbon-rich bottom layer. Differences in the chemistry of carbon and selenium and that of carbon and sulfur account for this segregation of carbon during selenization. For example, CSe 2 and CS2, both volatile species, may form as a result of chalcogen interactions with carbon during annealing. Unlike CS2, however, CSe2 may readily polymerize at room temperature and one atmosphere. Carbon segregation may be occurring only during selenization due to the formation of a Cu-Se polymer [i.e., (CSe 2-x)] within the nanocrystal film. The (CSe2-x) inhibits sintering of nanocrystals in the bottom layer. Additionally, a fast heating rate results in temperature variations that lead to transient condensation of selenium on the film. This is observed only during selenization because the equilibrium vapor pressure of selenium is lower than that of sulfur. The presence of liquid selenium during sintering accelerates coarsening and densification of the normal crystal layer (no abnormal crystal layer) by liquid phase sintering. Carbon segregation does not occur where liquid selenium was present.

Atmospheric Pressure Plasma Jet as a Dry Alternative to Inkjet Printing in Flexible Electronics

NASA Technical Reports Server (NTRS)

Gandhiraman, Ram Prasad; Lopez, Arlene; Koehne, Jessica; Meyyappan, M.

2016-01-01

We have developed an atmospheric pressure plasma jet printing system that works at room temperature to 50 deg C unlike conventional aerosol assisted techniques which require a high temperature sintering step to obtain desired thin films. Multiple jets can be configured to increase throughput or to deposit multiple materials, and the jet(s) can be moved across large areas using a x-y stage. The plasma jet has been used to deposit carbon nanotubes, graphene, silver nanowires, copper nanoparticles and other materials on substrates such as paper, cotton, plastic and thin metal foils.

Load regulating expansion fixture

DOEpatents

Wagner, Lawrence M.; Strum, Michael J.

1998-01-01

A free standing self contained device for bonding ultra thin metallic films, such as 0.001 inch beryllium foils. The device will regulate to a predetermined load for solid state bonding when heated to a bonding temperature. The device includes a load regulating feature, whereby the expansion stresses generated for bonding are regulated and self adjusting. The load regulator comprises a pair of friction isolators with a plurality of annealed copper members located therebetween. The device, with the load regulator, will adjust to and maintain a stress level needed to successfully and economically complete a leak tight bond without damaging thin foils or other delicate components.

High heating rate decomposition dynamics of copper oxide by nanocalorimetry-coupled time-of-flight mass spectrometry

NASA Astrophysics Data System (ADS)

Yi, Feng; DeLisio, Jeffery B.; Nguyen, Nam; Zachariah, Michael R.; LaVan, David A.

2017-12-01

The thermodynamics and evolved gases were measured during the rapid decomposition of copper oxide (CuO) thin film at rates exceeding 100,000 K/s. CuO decomposes to release oxygen when heated and serves as an oxidizer in reactive composites and chemical looping combustion. Other instruments have shown either one or two decomposition steps during heating. We have confirmed that CuO decomposes by two steps at both slower and higher heating rates. The decomposition path influences the reaction course in reactive Al/CuO/Al composites, and full understanding is important in designing reactive mixtures and other new reactive materials.

Search for ferromagnetic order in overdoped copper-oxide superconductors

PubMed Central

Wu, J.; Lauter, V.; Ambaye, H.; He, X.; Božović, I.

2017-01-01

In copper-oxides that show high-temperature superconductivity (HTS), the critical temperature (Tc) has a dome-shaped doping dependence. The cause of demise of both Tc and superfluid density ns on the overdoped side is a major puzzle. A recent study of transport and diamagnetism in a large number of overdoped La2−xSrxCuO4 (LSCO) films shows that this cannot be accounted for by disorder within the conventional Bardeen-Cooper-Schrieffer theory. This brings to focus an alternative explanation — competition of HTS with ferromagnetic order, fluctuating in superconducting samples and static beyond the superconductor-to-metal transition. Here, we examine this proposal by growing single-crystal LSCO thin films with doping on both sides of the transition by molecular beam epitaxy, and using polarized neutron reflectometry to measure their magnetic moments. In a heavily overdoped, metallic but non-superconducting LSCO (x = 0.35) film, the spin asymmetry of reflectivity shows a very small static magnetic moment (~2 emu/cm3). Less-doped, superconducting LSCO films show no magnetic moment in neutron reflectivity, both above and below Tc. Therefore, the collapse of HTS with overdoping is not caused by competing ferromagnetic order. PMID:28378795

Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

NASA Astrophysics Data System (ADS)

Zhu, Changqiong

Copper oxides (Cu2O and CuO), composed of non-toxic and earth abundant elements, are promising materials for electrical energy generation and storage devices. Solution based techniques for creating thin films of these materials, such as electrodeposition, are important to understand and develop because of their potential for realizing substantial energy savings compared to traditional fabrication methods. Cuprous oxide (Cu2O), with its direct band gap, is a p-type semiconductor that is well suited for creating solution-processed photovoltaic devices (solar cells); several key advancements made toward this application are the primary focus of this thesis. Electrodeposition of single-phase, crystalline Cu2O thin films is demonstrated using previously unexplored, acidic lactate/Cu2+ solutions, which has provided additional understanding of the impacts of growth solution chemistry on film formation. The influence of pH on the resulting Cu2O thin film properties is revealed by using the same ligand (sodium lactate) at various solution pH values. Cu2O films grown from acidic lactate solutions can exhibit a distinctive flowerlike, dendritic morphology, in contrast to the faceted, dense films obtained using alkaline lactate solutions. Relative speciation distributions of the various metal complex ions present under different growth conditions are calculated using reported equilibrium association constants and experimentally supported by UV-Visible absorption spectroscopy. Dependence of thin film morphology on the lactate/Cu2+ molar ratio and applied potential is described. Cu2O/eutectic gallium-indium Schottky junction devices are formed and devices are tested under monochromatic green LED illumination. Further surface examination of the Cu2O films using X-ray photoelectron spectroscopy (XPS) reveals the fact that films grown from acidic lactate solution with a small lactate/Cu2+ molar ratio, which exhibit improved photovoltaic performance compared to films grown from basic lactate solution with a large lactate/Cu2+ molar ratio, are sodium-free. This finding stands in contrast to the observation that films grown in basic solution contain a significant amount of sodium impurity at their top surfaces. Therefore, it is concluded that the sodium impurities present in films grown from basic lactate solutions are detrimental to overall photovoltaic device performance by introducing interface traps and recombination centers for charge carriers, which suggests that removing these impurities may be a promising strategy for improving Cu2O based solar cells. It has been found that impurities at the surface of electrodeposited p-Cu2O films can be efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of Cu 2O homojunction photovoltaic devices incorporating etched p-Cu 2O as the bottom layer is higher compared to devices with as-deposited p-Cu2O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers is found to lead to larger open circuit voltages. Zinc-doped cuprous oxide (Zn:Cu2O) thin films have also been prepared via single step electrodeposition from an aqueous solution containing sodium perchlorate. The Zn/Cu molar ratio in the Cu2O films can be tuned by adjusting the magnitude of the applied potential and the sodium perchlorate concentration. Electrical characterization reveals that zinc dopants increase the Fermi level in Zn:Cu2O films, enabling a three-fold improvement in the power conversion efficiency of a fully electrodeposited Cu2O homojunction photovoltaic device. Complementary to the development of Cu2O based photovoltaic devices, the use of solution deposited cupric oxide (CuO) thin films for capacitive energy storage has also been investigated. A seed layer-assisted chemical bath deposition (SCBD) method has been developed to create high quality CuO thin films on transparent conductive electrode (ITO)/glass substrates. A CuO seed layer is formed by the electrodeposition of Cu2O on ITO electrode for 10 s, followed by a brief (15 min) heating step to convert the Cu 2O to CuO. The seed layer is found to be essential for the growth of micrometer-thick, adherent CuO thin films on ITO-coated glass, as no films were observed to form on substrates without a seed layer. The addition of sodium lactate to the SCBD solution can be used to tune the morphology and relative crystallinity of the CuO films. A highly crystalline CuO film has been deposited from a solution without sodium lactate, while a largely amorphous CuO film was realized using lactate/Cu2+ molar ratio equal to 1.0. The CuO film with greater amorphous character exhibited a significantly larger specific capacitance as a redox active electrode compared to the crystalline film (2700 mF/g vs. 96 mF/g).

Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109

NASA Astrophysics Data System (ADS)

Yang, Chang; Kneiß, Max; Schein, Friedrich-Leonhard; Lorenz, Michael; Grundmann, Marius

2016-02-01

CuI is a p-type transparent conductive semiconductor with unique optoelectronic properties, including wide band gap (3.1 eV), high hole mobility (>40 cm2 V-1 s-1 in bulk), and large room-temperature exciton binding energy (62 meV). The difficulty in epitaxy of CuI is the main obstacle for its application in advanced solid-state electronic devices. Herein, room-temperature heteroepitaxial growth of CuI on various substrates with well-defined in-plane epitaxial relations is realized by reactive sputtering technique. In such heteroepitaxial growth the formation of rotation domains is observed and hereby systematically investigated in accordance with existing theoretical study of domain-epitaxy. The controllable epitaxy of CuI thin films allows for the combination of p-type CuI with suitable n-type semiconductors with the purpose to fabricate epitaxial thin film heterojunctions. Such heterostructures have superior properties to structures without or with weakly ordered in-plane orientation. The obtained epitaxial thin film heterojunction of p-CuI(111)/n-ZnO(00.1) exhibits a high rectification up to 2 × 109 (±2 V), a 100-fold improvement compared to diodes with disordered interfaces. Also a low saturation current density down to 5 × 10-9 Acm-2 is formed. These results prove the great potential of epitaxial CuI as a promising p-type optoelectronic material.

Betavoltaics using scandium tritide and contact potential difference

NASA Astrophysics Data System (ADS)

Liu, Baojun; Chen, Kevin P.; Kherani, Nazir P.; Zukotynski, Stefan; Antoniazzi, Armando B.

2008-02-01

Tritium-powered betavoltaic micropower sources using contact potential difference (CPD) are demonstrated. Thermally stable scandium tritide thin films with a surface activity of 15mCi/cm2 were used as the beta particle source. The electrical field created by the work function difference between the ScT film and a platinum or copper electrode was used to separate the beta-generated electrical charge carriers. Open circuit voltages of 0.5 and 0.16V and short circuit current densities of 2.7 and 5.3nA/cm2 were achieved for gaseous and solid dielectric media-based CPD cells, respectively.

EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Selective metallisation of diamonds with the aid of laser radiation

NASA Astrophysics Data System (ADS)

Shafeev, Georgii A.; Pimenov, S. M.; Lubnin, Evgenii N.; Smolin, A. A.; Konov, Vitalii I.; Laptev, V. A.

1995-02-01

An experimental investigation was made of laser activation of diamond surfaces (single crystals and polycrystalline diamond films) prior to electroless before catalytic deposition of metals from solutions. The activation was carried out by a copper vapour laser or a KrF excimer laser in two ways: decomposition of a thin film of palladium acetylacetonate and local laser stimulated modification of the diamond surface by laser evaporation. An ohmic contact (Cu or Ni) with an adhesive strength of 3 N mm-2 was formed and the spatial resolution achieved was 10 μm.

Fabrication of copper decorated tungsten oxide-titanium oxide nanotubes by photochemical deposition technique and their photocatalytic application under visible light

NASA Astrophysics Data System (ADS)

Momeni, Mohamad Mohsen

2015-12-01

Copper decorated WO3-TiO2 nanotubes (Cu/WTNs) with a high photocatalytic activity were prepared by anodizing and photochemical deposition. Highly ordered WO3-TiO2 nanotubes (WTNs) on pure titanium foils were successfully fabricated by electrochemical anodizing and copper deposited on these nanotubes (Cu/WTNs) by photoreduction method. The resulting samples were characterized by various methods. Only the anatase phase was detected by X-ray diffraction analysis. The presence of copper in the structure of thin films was confirmed by energy dispersive X-ray spectrometry and X-ray diffraction. The extension of optical absorption into the visible region of as-prepared films was indicated by UV/Vis spectroscopy. The degradation of methylene blue was used as a model reaction to evaluate the photocatalytic activity of the obtained samples. Results showed that the photocatalytic activity of Cu/WTNs samples is higher than bare WTNs sample. Kinetic research showed that the reaction rate constant of Cu/WTNs is approximately 2.5 times higher than the apparent reaction rate constant of bare WTNs. These results not only offer an economical method for constructing Cu/WTNs photocatalysts, but also shed new insight on the rational design of a low cost and high-efficiency photocatalyst for environmental remediation.

RF and structural characterization of new SRF films

DOE Office of Scientific and Technical Information (OSTI.GOV)

A.-M. Valente-Feliciano,H. L. Phillips,C. E. Reece,X. Zhao,D. Gu,R. Lukaszew,B. Xiao,K. Seo

2009-09-01

In the past years, energetic vacuum deposition methods have been developed in different laboratories to improve Nb/Cu technology for superconducting cavities. Jefferson Lab is pursuing energetic condensation deposition via Electron Cyclotron Resonance. As part of this study, the influence of the deposition energy on the material and RF properties of the Nb thin film is investigated. The film surface and structure analyses are conducted with various techniques like X-ray diffraction, Transmission Electron Microscopy, Auger Electron Spectroscopy and RHEED. The microwave properties of the films are characterized on 50 mm disk samples with a 7.5 GHz surface impedance characterization system. Thismore » paper presents surface impedance measurements in correlation with surface and material characterization for Nb films produced on copper substrates with different bias voltages and also highlights emerging opportunities for developing multilayer SRF films with a new deposition system.« less

Investigations and application in piezoelectric phenol sensor of Langmuir-Schäfer films of a copper phthalocyanine derivative functionalized with bulky substituents.

PubMed

Giancane, G; Basova, T; Hassan, A; Gümüş, G; Gürek, A G; Ahsen, V; Valli, L

2012-07-01

An octa-substituted copper phthalocyanine was dissolved in chloroform and spread on ultrapure water subphase in a Langmuir trough. The floating films were characterized at the air-water interface by the Langmuir isotherm, Brewster angle microscopy, and UV-Vis reflection spectroscopy and transferred by Langmuir-Schäfer technique on a silicon substrate, and thickness, refractive index, and extinction coefficient of the phthalocyanine derivative thin film were calculated by means of spectroscopic ellipsometry. A different number of layers were deposited using Langmuir-Schäfer method onto QCM crystals, and the active layers were tested as sensors for the detection of phenols in aqueous solution. The piezoelectric sensor response, totally reversible, is influenced by the number of transferred layers and by the nature of the substituent; on the contrary, the pK(a) value of the injected analytes slightly affects the device performances. Repeatability of the sensor responses was tested, and the frequency variation appears unchanged at least for 100 days. Copyright © 2012 Elsevier Inc. All rights reserved.

Effect of annealing time on optical and electrical properties of CdS thin films

NASA Astrophysics Data System (ADS)

Soliya, Vanshika; Tandel, Digisha; Patel, Chandani; Patel, Kinjal

2018-05-01

Cadmium sulphide (CdS) is semiconductor compound of II-VI group. Thin film of CdS widely used in the applications such as, a buffer layer in copper indium diselenide (CIS) hetrojunction based solar cells, transistors, photo detectors and light emitting diodes. Because of the ease of making like chemical bath deposition (CBD), screen printing and thermal evaporation. It is extensively used in the CIS based solar cells as a buffer layers. The buffer layers usually used for reducing the interface recombination of the photo generated carriers by means of improving the lattice mismatch between the layers. The optimum thickness and the optoelectronics properties of CdS thin films like, optical band gap, electrical resistivity, structure, and composition etc., are to be considering for its use as a buffer layer. In the present study the CdS thin film were grown by simple dip coating method. In this method we had prepared 0.1M Cadmium-thiourea precursor solution. Before the deposition process of CdS, glass substrate has been cleaned using Methanol, Acetone, Trichloroethylene and De-ionized (DI) water. After coating of precursor layer, it was heated at 200 °C for themolysis. Then after CdS films were annealed at 200 °C for different time and studied its influence on the optical transmission, band gap, XRD, raman and the electrical resistivity. As increasing the annealing time we had observed the average transmission of the films was reduce after the absorption edge. In addition to the blue shift of absorption edge was observed. The observed optimum band gap was around 2.50 eV. XRD and raman analysis confirms the cubuc phase of CdS. Hot probe method confirms the n-type conductivity of the CdS film. Hall probe data shows the resistivity of the films was in the order of 103 Ωcm. Observed data signifies its future use in the many optoelectronics devices.

Earth abundant thin film technology for next generation photovoltaic modules

NASA Astrophysics Data System (ADS)

Alapatt, Githin Francis

With a cumulative generation capacity of over 100 GW, Photovoltaics (PV) technology is uniquely poised to become increasingly popular in the coming decades. Although, several breakthroughs have propelled PV technology, it accounts for only less than 1% of the energy produced worldwide. This aspect of the PV technology is primarily due to the somewhat high cost per watt, which is dependent on the efficiency of the PV cells as well as the cost of manufacturing and installing them. Currently, the efficiency of the PV conversion process is limited to about 25% for commercial terrestrial cells; improving this efficiency can increase the penetration of PV worldwide rapidly. A critical review of all possibilities pursued in the public domain reveals serious shortcomings and manufacturing issues. To make PV generated power a reality in every home, a Multi-Junction Multi-Terminal (MJMT) PV architecture can be employed combining silicon and another earth abundant material. However, forming electronic grade thin films of earth abundant materials is a non-trivial challenge; without solving this, it is impossible to increase the overall PV efficiency. Deposition of Copper (I) Oxide, an earth abundant semiconducting material, was conducted using an optimized Photo assisted Chemical Vapor Deposition process. X-Ray Diffraction, Ellipsometry, Transmission Electron Microscopy, and Profilometry revealed that the films composed of Cu2O of about 90 nm thickness and the grain size was as large as 600 nm. This result shows an improvement in material properties over previously grown thin films of Cu2O. Measurement of I-V characteristics of a diode structure composed of the Cu2O indicates an increase in On/Off ratio to 17,000 from the previous best value of 800. These results suggest that the electronic quality of the thin films deposited using our optimized process to be better than the results reported elsewhere. Using this optimized thin film forming technique, it is now possible to create a complete MJMT structure to improve the terrestrial commercial PV efficiency.

Electroless Plating of Copper on Polyimide Film Modified by 50 Hz Plasma Graft Polymerization with 1-Vinylimidazole

NASA Astrophysics Data System (ADS)

Wong, Chiow San; Lem, Hon Pong; Goh, Boon Tong; Wong, Cin Wie

2009-03-01

This paper reports on the proof of concept work on the novel process of producing metalized polyimide (PI) film by coating a layer of copper (Cu) thin film on the surface of the PI film without using any adhesive. The method which is employed to produce a metalized PI film used in flexible printed circuit (FPC) is based on plasma graft polymerization of 1-vinlyimidazole (VIDz) on plasma pre-treated PI surface. The plasma grafted PI film (VIDz-g-PI) surfaces are characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning electron microscopy (SEM). AFM results show that the PI film surface has been successfully treated and grafted with VIDz. As post-thermal treatment is known to promote adhesion strength between the metallic film and the PI surface, the effects of post-thermal treatment environment and temperature on the adhesion property of Cu plated VIDz-g-PI (Cu/VIDz-g-PI) are evaluated. Post-thermal treatment in air shows better adhesion strength than in vacuum. The adhesion strength decreases as the post-thermal treatment temperature is increased. In the present development work, the adhesion strength obtained has met the initial market targeted 9-10 N/cm adhesion strength. Samples obtained at a pre-selected plasma power and time window are able to maintain their adhesion strength after being subjected to ageing at 100 °C for 168 h.

Photoinduced Br Desorption from CsBr Thin Films Grown on Cu(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halliday, Matthew T.; Joly, Alan G.; Hess, Wayne P.

2015-10-22

Thin films of CsBr deposited onto metals such as copper are potential photocathode materials for light sources and other applications. We investigate desorption dynamics of Br atoms from CsBr films grown on insulator (KBr, LiF) and metal (Cu) substrates induced by sub-bandgap 6.4 eV laser pulses. The experimental results demonstrate that the peak kinetic energy of Br atoms desorbed from CsBr/Cu films is much lower than that for the hyperthermal desorption from CsBr/LiF films. Kelvin probe measurements indicate negative charge at the surface following Br desorption from CsBr/Cu films. Our ab initio calculations of excitons at CsBr surfaces demonstrate thatmore » this behavior can be explained by an exciton model of desorption including electron trapping at the CsBr surface. Trapped negative charges reduce the energy of surface excitons available for Br desorption. We examine the electron-trapping characteristics of low-coordinated sites at the surface, in particular, divacancies and kink sites. We also provide a model of cation desorption caused by Franck-Hertz excitation of F centers at the surface in the course of irradiation of CsBr/Cu films. These results provide new insights into the mechanisms of photoinduced structural evolution of alkali halide films on metal substrates and activation of metal photocathodes coated with CsBr.« less

Free Energy Defect Model for the Cu-In-Ga-Se Tetrahedral Lattice

NASA Astrophysics Data System (ADS)

Stanbery, B. J.

2003-03-01

The most efficient thin-film photovoltaic converters of solar insolation to electrical power have recently achieved conversion efficiencies exceeding 19%, and are based on light absorbing layers containing the binary alloy (CuInSe_2)_1-X(CuGaSe_2)X of the α phases of these ternary chalcopyrite compounds. A statistical quantum mechanical model of the thermodynamic equilibrium defect structure of the tetrahedral lattice of copper, indium, and selenium with composition in the domain between that of the stoichiometric CuIn_1-XGa_XSe2 alloy and the β phase Cu(In_1-XGa_X)_3Se5 composition is presented. Compositions more copper-deficient than the latter have been reported experimentally to result in a breakdown of the tetrahedral coordination characteristic of the chalcopyrite lattice. These computations are based on a cluster expansion algorithm that minimizes the total free energy of the system using the Gibbs-Duhem equation to compute quasichemical reaction equilibria between the neutral clusters, and explicitly incorporates Fermi-Dirac statistics to determine their ionization equilibria and consequent carrier concentrations in the conduction and valence bands. The results are consistent with recent experimental evidence that the stoichiometric CuIn_1-XGa_XSe2 composition segregates in equilibrium into a two-phase mixture of a copper-deficient quaternary Cu_1-γIn_1-XGa_XSe2 composition and the binary Cu_2-δSe compound. The model predicts that the hole majority carrier (p-type) can only be achieved in the equilibrium single-phase chalcopyrite lattice with compositions that correspond to Cu_1-γIn_1-XGa_XSe_2+ɛ with γ and ɛ >0. This predicted requirement for selenium enrichment compared to the stoichiometric CuIn_1-XGa_XSe2 alloy composition for the dominance of holes over electrons as the majority carrier type is consistent with experimental evidence, and is explained in terms of a transition of the dominant lattice defect from the selenium vacancy in the stoichiometric case to the copper vacancy defect in the selenium-enriched lattice. This result is of particular importance since all CuIn_1-XGa_XSe2 thin-film solar cells utilize p-type absorber films.

Evaluation of copper ion of antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori and optical, mechanical properties

NASA Astrophysics Data System (ADS)

Kim, Young-Hwan; Choi, Yu-ri; Kim, Kwang-Mahn; Choi, Se-Young

2012-02-01

Antibacterial effect on Pseudomonas aeruginosa, Salmonella typhimurium and Helicobacter pylori of copper ion was researched. Also, additional effects of copper ion coating on optical and mechanical properties were researched as well. Copper ion was coated on glass substrate as a thin film to prevent bacteria from growing. Cupric nitrate was used as precursors for copper ion. The copper ion contained sol was deposited by spin coating process on glass substrate. Then, the deposited substrates were heat treated at the temperature range between 200 °C and 250 °C. The thickness of deposited copper layer on the surface was 63 nm. The antibacterial effect of copper ion coated glass on P. aeruginosa, S. typhimurium and H. pylori demonstrated excellent effect compared with parent glass. Copper ion contained layer on glass showed a similar value of transmittance compared with value of parent glass. The 3-point bending strength and Vickers hardness were 209.2 MPa, 540.9 kg/mm2 which were about 1.5% and 1.3% higher than the value of parent glass. From these findings, it is clear that copper ion coating on glass substrate showed outstanding effect not only in antibacterial activity but also in optical and mechanical properties as well.

Tracing the 5000-year recorded history of inorganic thin films from ˜3000 BC to the early 1900s AD

NASA Astrophysics Data System (ADS)

Greene, J. E.

2014-12-01

Gold is very likely the first metal discovered by man, more than 11 000 years ago. However, unlike copper (˜9000 BC), bronze (˜3500 BC), and wrought iron (˜2500-3000 BC), gold is too soft for fabrication of tools and weapons. Instead, it was used for decoration, religious artifacts, and commerce. The earliest documented inorganic thin films were gold layers, some less than 3000 Å thick, produced chemi-mechanically by Egyptians approximately 5000 years ago. Examples, gilded on statues and artifacts (requiring interfacial adhesion layers), were found in early stone pyramids dating to ˜2650 BC in Saqqara, Egypt. Spectacular samples of embossed Au sheets date to at least 2600 BC. The Moche Indians of northern Peru developed electroless gold plating (an auto-catalytic reaction) in ˜100 BC and applied it to intricate Cu masks. The earliest published electroplating experiments were ˜1800 AD, immediately following the invention of the dc electrochemical battery by Volta. Chemical vapor deposition (CVD) of metal films was reported in 1649, atmospheric arc deposition of oxides (Priestley) in the mid-1760s, and atmospheric plasmas (Siemens) in 1857. Sols were produced in the mid-1850s (Faraday) and sol-gel films synthesized in 1885. Vapor phase film growth including sputter deposition (Grove, 1852), vacuum arc deposition ("deflagration," Faraday, 1857), plasma-enhanced CVD (Barthelot, 1869) and evaporation (Stefan, Hertz, and Knudsen, 1873-1915) all had to wait for the invention of vacuum pumps whose history ranges from ˜1650 for mechanical pumps, through ˜1865 for mercury pumps that produce ballistic pressures in small systems. The development of crystallography, beginning with Plato in 360 BC, Kepler in 1611, and leading to Miller indices (1839) for describing orientation and epitaxial relationships in modern thin film technology, was already well advanced by the 1780s (Haüy). The starting point for the development of heterogeneous thin film nucleation theory was provided by Young in 1805. While an historical timeline tracing the progress of thin film technology is interesting of itself, the stories behind these developments are even more fascinating and provide insight into the evolution of scientific reasoning.

Layered CU-based electrode for high-dielectric constant oxide thin film-based devices

DOEpatents

Auciello, Orlando

2010-05-11

A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.

Inexpensive Method of Testing Ambient and Thermally Elevated Resistive and Piezoresistive Thin-Film Pressure Gauges

NASA Astrophysics Data System (ADS)

Armstrong, Christopher; Rae, Philip; Heatwole, Eric; Tasker, Douglas; Los Alamos National Labortatory Team

2017-06-01

Manganin is an alloy that changes resistance when subjected to high-pressure, but is insensitive to temperature changes. Resistance curves as a function of pressure for these gauges have been established. Another commonly used piezoresistive pressure sensor are thin-film carbon gauges, which are more pressure sensitive than manganin gauges. Carbon gauge response in high temperature is not well quantified. The current research is focused on verifying these established resistance curves as well as verifying this specific experimental configuration. In this research the carbon gauges' resistance change is measured for thermally elevated gauges. In this setup a 20 mm caliber gun drove planar copper projectiles at the gauge, which was embedded in a copper anvil. The Hugoniot relationship allows for a comparison between observed and theoretical pressure over a pressure range 5 to 20 GPa for manganin gauges and 1 to 5 GPa for carbon gauges. The comparison between the data obtained in this research and that of others shows that the pressure-resistance curve of manganin does to not vary between lots of manganin. Additionally, the data shows that this setup is a relatively inexpensive quick means of testing gauge response to high-pressure shocks and is suitable for elevated temperature.

Materials Development for Auxiliary Components for Large Compact Mo/Au TES Arrays

NASA Technical Reports Server (NTRS)

Finkbeiner, F. m.; Chervenak, J. A.; Bandler, S. R.; Brekosky, R.; Brown, A. D.; Figueroa-Feliciano, E.; Iyomoto, N.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.;

BariumCopperChFluorine (Ch = Sulfur, Selenium, Tellurium) p-type transparent conductors

NASA Astrophysics Data System (ADS)

Zakutayev, Andriy

BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 -- 3.5 eV) and a high concentration of free holes (1018 -- 1020 cm-3 ) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level close to the valence band maximum. BaCuChF thin film solid solutions prepared by pulsed laser deposition (PLD) have tunable properties, such as lattice constants, conductivity and optical band gaps. BaCuSF and BaCuSeF materials also feature room-temperature stable 3D excitons with spin-orbit-split levels. BaCuTeF has forbidden lowest-energy optical transitions which extends its transparency range. BaCuChF surfaces oxidize when exposed to air, but can be protected using Ch capping layers. Polycrystalline BaCuSeF thin films have a 4.85 eV work function, a 0.11 eV hole injection barrier into ZnPc, and 0.00 eV valence band offset with ZnTe. BaCuSeF should have s similar band offset and similar interfacial properties with CdTe and Cu(InGa)Se2, and BaCuSF should have no valence band offset with Cu2ZnSnS4, according to the transitivity rule. Therefore, BaCuSeF is suitable for applications as a p-layer in organic light-emitting diodes, p-i-n double-heterojunction and tandem chalcogenide solar cells.

Production of Silicon Oxide like Thin Films by the Use of Atmospheric Plasma Torch

NASA Astrophysics Data System (ADS)

Ozono, E. M.; Fachini, E. R.; Silva, M. L. P.; Ruchko, L. F.; Galvão, R. M. O.

2015-03-01

The advantages of HMDS (hexamethyldisilazane) APT-plasma films for sensor applications were explored producing films in a three-turn copper coil APT equipment. HMDS was introduced into the argon plasma at four different conditions. Additional flux of oxygen could modulate the presence of organic components in the film, the composition varying from pure inorganic oxides to organo-silane polymers. Oxygen promoted deposition rates as high as 900 nm/min on silicon, acrylic or piezoelectric quartz crystal substrates. Films with a clustered morphology and refractive index of 1.45 were obtained, mainly due to a silicon oxide structure. Raman spectroscopy and XPS data showed the presence of CHn and amorphous carbon in the inorganic matrix. The films were sensitive to the humidity of the air. The adsorptive capabilities of outstanding films were tested in a Quartz Crystal Microbalance (QCM). The results support that those films can be a useful and simple alternative for the development of sensors.

Initial stage corrosion of nanocrystalline copper particles and thin films

NASA Astrophysics Data System (ADS)

Tao, Weimin

1997-12-01

Corrosion behavior is an important issue in nanocrystalline materials research and development. A very fine grain size is expected to have significant effects on the corrosion resistance of these novel materials. However, both the macroscopic corrosion properties and the corresponding structure evolution during corrosion have not been fully studied. Under such circumstances, conducting fundamental research in this area is important and necessary. In this study, high purity nanocrystalline and coarse-grained copper were selected as our sample material, sodium nitrite aqueous solution at room temperature and air at a high temperature were employed as corrosive environments. The weight loss testing and electrochemical methods were used to obtain the macroscopic corrosion properties, whereas the high resolution transmission electron microscope was employed for the structure analysis. The weight loss tests indicate that the corrosion rate of nanocrystalline copper is about 5 times higher than that of coarse-grained copper at the initial stage of corrosion. The electrochemical measurements show that the corrosion potential of the nanocrystalline copper has a 230 mV negative shift in comparison with that of the coarse-grained copper. The nanocrystalline copper also exhibits a significantly higher exchange current density than the coarse-grained copper. High resolution TEM revealed that the surface structure changes at the initial stage of corrosion. It was found that the first copper oxide layer formed on the surface of nanocrystalline copper thin film contains a large density of high angle grain boundaries, whereas that formed on the surface of coarse-grained copper shows highly oriented oxide nuclei and appears to show a strong tendency for forming low angle grain boundaries. A correlation between the macroscopic corrosion properties and the structure characteristics is proposed for the nanocrystalline copper based on the concept of the "apparent" exchange current density associated with mass transport of ions in the oxide layer. A hypothesis is developed that the high corrosion rate of the nanocrystalline copper is closely associated with the structure of the copper oxide layer. Therefore, a high "apparent" exchange current density for the nanocrystalline copper is associated with the high angle grain boundary structure in the initial oxide layer. Additional structure analysis was also carried out: (a) High resolution TEM imaging has provided a cross sectional view of the epitaxial interface between nanocrystalline copper and copper (I) oxide and explicitly discloses the presence of interface defects such as misfit dislocations. Based on this observation, a mechanism was proposed to explain the Cu/Cusb2O interface misfit accommodation. This appears to be the first time this interface has been directly examined. (b) A nanocrystalline analogue to a cross-section of Gwathmey's copper single crystal sphere was revealed by high resolution TEM imaging. A partially oxidized nanocrystalline copper particle is used to examine the variation of the Cu/Cusb2O orientation relationship with respect to changes in surface orientation. A new orientation relationship, Cu (011) //Cusb2O (11), ˜ Cu(011)//Cusb2O(111), was found for the oxidation of nanocrystalline copper.

Inter-diffusion of copper and hafnium as studied by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Pearson, Justin; Chourasia, A. R.

The Cu/Hf interface has been characterized by x-ray photoelectron spectroscopy. Thin films (thicknesses ranging from 100 nm to 150 nm) of hafnium were deposited on a silicon substrate. About 80 nm of copper was then deposited on such samples. The e-beam method was used for the deposition. The samples were annealed for 30 min at temperatures of 100, 200, 300, 400, and 500°C. The inter-diffusion of copper and hafnium was investigated by sequential sputter depth profiling and x-ray photoelectron spectroscopy. The interdiffusion in each case was analyzed by the Matano-Boltzmann's procedure using the Fick's second law. The interdiffusion coefficients and the width of the interface as determined from the data have been correlated with the annealing temperature. Supported by Organized Research, TAMU-Commerce.

An Experimental Determination of the Quasi-Rest Potential of Copper Indium Disulfide Utilizing the Novel Open-Circuit Voltage Transient

NASA Astrophysics Data System (ADS)

Newell, Michael Jason

Environmental sustainability requires resource management that takes future generations into account. The present generation has witnessed changes across the planet, unprecedented in human history and disrupting communities and cities around the world, due to shifting global climate. This is primarily the result of fossil fuels, which powered modern civilization but dramatically increased levels of CO2 and other greenhouse gases, and may be the least sustainable aspect of human civilization. Chapter 1 justifies the research from an environmental perspective and provides initial research parameters. Thin film photovoltaic (PV) modules are reported the most sustainable among energy production technologies currently available. Electrodeposited PV layers offer significant improvement to sustainability metrics over current thin film production methods, at reduced cost, but have rarely been demonstrated on an industrial scale. Quasi-rest potential (QRP) ultimately led to large-scale, electrodeposited thin film CdTe modules. An in-situ material characterization technique that allows adjustment of the deposition voltage (Vdep) to match the exact experimental conditions, QRP enabled precise control of deposit stoichiometry and crystallinity. Chapter 2 discusses theory and literature regarding QRP, and introduces the open-circuit voltage transient (Voc T), developed by the present research for analyzing QRP as a function of both Vdep and time. VocT data from a CdTe ethylene glycol bath matches details and speculations from the literature. Although predicted to have wide applicability, experimental QRP data have never been published for compounds unrelated to CdTe. Chapter 3 discusses VocTs performed in pursuit of electrodeposited CuInS2, demonstrating functionality as a QRP scan in a variety of ethylene glycol solutions. Stoichiometries of deposited films were improved by using the V ocT to determine appropriate plating voltages. VocTs enabled QRP, in-situ rest potential (EM2), and current simultaneously vs Vdep and correlated with cyclic voltammetry experiments. Films approaching stoichiometric CuInS2 were generally obtained around -1 V vs Ag/AgCl, just noble of onset of metallic indium deposition, with a QRP around -0.8 V and EM2 between -0.55 V and -0.6 V. Sulfur content of deposited films could also be significantly increased during deposition using open-circuit techniques based on VocT data. Serendipitous production of large copper sulfide nanowires is briefly discussed.

Facile fabrication of Cu(II)-porphyrin MOF thin films from tetrakis(4-carboxyphenyl)porphyrin and Cu(OH)2 nanoneedle array

NASA Astrophysics Data System (ADS)

La, Duong Duc; Thi, Hoai Phuong Nguyen; Kim, Yong Shin; Rananaware, Anushri; Bhosale, Sheshanath V.

2017-12-01

Herein, we report a facile synthetic protocol to grow thin films of Cu(II) tetrakis(4-carboxyphenyl)porphyrin (CuTCPP) metal-organic frameworks (MOF) from a tetrakis(4-carboxyphenyl)porphyrin (H2TCPP) solution and the copper hydroxide (Cu(OH)2) nanoneedle array formed on a Cu substrate at room temperature. The formations of Cu-centered TCPP ligands and crystalline platelet-like Cu MOFs were successfully probed by SEM, XRD, FTIR, UV-vis and XPS. The formation process from Cu(OH)2 was monitored by using SEM images obtained at different reaction times during the first 24 h, thus suggesting the reaction pathway of Cu(OH)2 dissolution followed by the reprecipitation of CuTCPP MOFs at a near surface. In addition, the CuTCPP MOFs exhibited a high specific surface area of 408 m2/g.

Experiments on the properties of superfluid helium in zero gravity

NASA Technical Reports Server (NTRS)

Mason, P.; Collins, D.; Petrac, D.; Yang, L.; Edeskuty, F.; Williamson, K.

1976-01-01

The paper describes a research program designed to study the behavior of superfluid liquid helium in low and zero gravity in order to determine the properties which are critically important to its use as a stored cryogen for cooling scientific instruments aboard spacecraft for periods up to several months. The experiment program consists of a series of flights of an experiment package on a free-fall trajectory both on an aircraft and on a rocket. The objectives are to study thickness of thin films of helium as a function of acceleration, heat transfer in thin films, heat transfer across copper-liquid helium interfaces, fluid dynamics of bulk helium in high and low accelerations and under various conditions of rotations, alternate methods of separation of liquid and vapor phases and of efficient venting of the vapor, and undesirable thermomechanical oscillations in the vent pipes. Preliminary results from aircraft tests are discussed.

Using graphene/styrene-isoprene-styrene copolymer composite thin film as a flexible microstrip antenna for the detection of heptane vapors

NASA Astrophysics Data System (ADS)

Olejnik, Robert; Matyas, Jiri; Slobodian, Petr; Riha, Pavel

2018-03-01

Most portable devices, such as mobile phones or tablets, use antennas made of copper. This paper demonstrates the possible use of antenna constructed from electrically conductive polymer composite materials for use in those applications. The method of preparation and the properties of the graphene/styrene-isoprene-styrene copolymer as flexible microstrip antenna are described in this contribution. Graphene/styrene-isoprene-styrene copolymer toluene solution was prepared by means of ultrasound and the PET substrate was dip coated to reach a fine thin film. The main advantages of using PET as a substrate are low weight and flexibility. The final size of the flexible microstrip antenna was 10 × 25 mm with thickness of 0.48 mm (PET substrate 0.25 mm) with a weight of 0.110 g. The resulting antenna operates at a frequency of 1.8 GHz and gain ‑40.02 dB.

Transpassive Dissolution of Copper and Rapid Formation of Brilliant Colored Copper Oxide Films

NASA Astrophysics Data System (ADS)

Fredj, Narjes; Burleigh, T. David; New Mexico Tech Team

2014-03-01

This investigation describes an electrochemical technique for growing adhesive copper oxide films on copper with attractive colors ranging from gold-brown to pearl with intermediate colors from red violet to gold green. The technique consists of anodically dissolving copper at transpassive potentials in hot sodium hydroxide, and then depositing brilliant color films of Cu2O onto the surface of copper after the anodic potential has been turned off. The color of the copper oxide film depends on the temperature, the anodic potential, the time t1 of polarization, and the time t2, which is the time of immersion after potential has been turned off. The brilliant colored films were characterized using glancing angle x-ray diffraction, and the film was found to be primarily Cu2O. Cyclic voltammetry, chronopotentiometry, scanning electron microscopy, and x-ray photoelectron spectroscopy were also used to characterize these films.

Intrinsically water-repellent copper oxide surfaces; An electro-crystallization approach

NASA Astrophysics Data System (ADS)

Akbari, Raziyeh; Ramos Chagas, Gabriela; Godeau, Guilhem; Mohammadizadeh, Mohammadreza; Guittard, Frédéric; Darmanin, Thierry

2018-06-01

Use of metal oxide thin layers is increased due to their good durability under environmental conditions. In this work, the repeatable nanostructured crystalite Cu2O thin films, developed by electrodeposition method without any physical and chemical modifications, demonstrate good hydrophobicity. Copper (I) oxide (Cu2O) layers were fabricated on gold/Si(1 0 0) substrates by different electrodeposition methods i.e. galvanostatic deposition, cyclic voltammetry, and pulse potentiostatic deposition and using copper sulfate (in various concentrations) as a precursor. The greatest crystalline face on prepared Cu2O samples is (1 1 1) which is the most hydrophobic facet of Cu2O cubic structure. Indeed, different crystallite structures such as nanotriangles and truncated octahedrons were formed on the surface for various electrodeposition methods. The increase of the contact angle (θw) measured by the rest time, reaching to about 135°, was seen at different rates and electrodeposition methods. In addition, two-step deposition surfaces were also prepared by applying two of the mentioned methods, alternatively. In general, the morphology of the two-step deposition surfaces showed some changes compared to that of one-step samples, allowing the formation of different crystallite shapes. Moreover, the wettability behavior showd the larger θw of the two-step deposition layers compared to the related one-step deposition layers. Therefore, the highest observed θw was related to the one of two-step deposition layers due to the creation of small octahedral structures on the surface, having narrow and deep valleys. However, there was an exception which was due to the resulted big structures and broad valleys on the surface. So, it is possible to engineer different crystallites shapes using the proposed two-step deposition method. It is expected that hydrophobic crystallite thin films can be used in environmental and electronic applications to save energy and materials properties.

The Use of Feature Parameters to Asses Barrier Properties of ALD coatings for Flexible PV Substrates

NASA Astrophysics Data System (ADS)

Blunt, Liam; Robbins, David; Fleming, Leigh; Elrawemi, Mohamed

2014-03-01

This paper reports on the recent work carried out as part of the EU funded NanoMend project. The project seeks to develop integrated process inspection, cleaning, repair and control systems for nano-scale thin films on large area substrates. In the present study flexible photovoltaic films have been the substrate of interest. Flexible PV films are the subject of significant development at present and the latest films have efficiencies at or beyond the level of Si based rigid PV modules. These flexible devices are fabricated on polymer film by the repeated deposition, and patterning, of thin layer materials using roll-to-roll processes, where the whole film is approximately 3um thick prior to encapsulation. Whilst flexible films offer significant advantages in terms of mass and the possibility of building integration (BIPV) they are at present susceptible to long term environmental degradation as a result of water vapor transmission through the barrier layers to the CIGS (Copper Indium Gallium Selenide CuInxGa(1-x)Se2) PV cells thus causing electrical shorts and efficiency drops. Environmental protection of the GIGS cell is provided by a thin (40nm) barrier coating of Al2O3. The highly conformal aluminium oxide barrier layer is produced by atomic layer deposition (ALD) where, the ultra-thin Al2O3 layer is deposited onto polymer thin films before these films encapsulate the PV cell. The surface of the starting polymer film must be of very high quality in order to avoid creating defects in the device layers. Since these defects reduce manufacturing yield, in order to prevent them, a further thin polymer coating (planarization layer) is generally applied to the polymer film prior to deposition. The presence of surface irregularities on the uncoated film can create defects within the nanometre-scale, aluminium oxide, barrier layer and these are measured and characterised. This paper begins by reporting the results of early stage measurements conducted to characterise the uncoated and coated polymer film surface topography using feature parameter analysis. The measurements are carried out using a Taylor Hobson Coherence Correlation Interferometer an optical microscope and SEM. Feature parameter analysis allows the efficient separation of small insignificant defects from large defects. The presence of both large and insignificant defects is then correlated with the water vapour transmission rate as measured on representative sets of films using at standard MOCON test. The paper finishes by drawing conclusions based on analysis of WVTR and defect size, where it is postulated that small numbers of large defects play a significant role in higher levels of WVTR.

Increasing light coupling in a photovoltaic film by tuning nanoparticle shape with substrate surface energy

NASA Astrophysics Data System (ADS)

Kataria, Devika; Krishnamoorthy, Kothandam; Iyer, S. Sundar Kumar

2017-08-01

Tuning metal nanoparticle (MNP) contact angle on the surface it is formed can help maximise the useful optical coupling in photovoltaic films by localized surface plasmon (LSP) resonance—opening up the possibility of building improved photovoltaic cells. In this work experimental demonstration of optical absorption increase in copper phthalocyanine (CuPc) films by tuning silver MNP shape by changing its contact angles with substrate has been reported. Thin films of poly3,4 ethylenedioxythiophene: sodium dodecycl sulphate (PEDOT:SDS) with different surface energies were formed on indium tin oxide (ITO) coated glass by electro-deposition. Silver MNPs thermally evaporated directly on ozonised ITO as well as on the PEDOT:SDS films showed contact angles ranging from 60° to 125°. The CuPc layer was deposited on top of the MNPs. For the samples studied, best optical absorption in the CuPc layer was for a contact angle of 110°.

Chemical reaction of atomic oxygen with evaporated films of copper, part 4

NASA Technical Reports Server (NTRS)

Fromhold, A. T.; Williams, J. R.

1990-01-01

Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

Polyethylene oxide film coating enhances lithium cycling efficiency of an anode-free lithium-metal battery.

PubMed

Assegie, Addisu Alemayehu; Cheng, Ju-Hsiang; Kuo, Li-Ming; Su, Wei-Nien; Hwang, Bing-Joe

2018-03-29

The practical implementation of an anode-free lithium-metal battery with promising high capacity is hampered by dendrite formation and low coulombic efficiency. Most notably, these challenges stem from non-uniform lithium plating and unstable SEI layer formation on the bare copper electrode. Herein, we revealed the homogeneous deposition of lithium and effective suppression of dendrite formation using a copper electrode coated with a polyethylene oxide (PEO) film in an electrolyte comprising 1 M LiTFSI, DME/DOL (1/1, v/v) and 2 wt% LiNO3. More importantly, the PEO film coating promoted the formation of a thin and robust SEI layer film by hosting lithium and regulating the inevitable reaction of lithium with the electrolyte. The modified electrode exhibited stable cycling of lithium with an average coulombic efficiency of ∼100% over 200 cycles and low voltage hysteresis (∼30 mV) at a current density of 0.5 mA cm-2. Moreover, we tested the anode-free battery experimentally by integrating it with an LiFePO4 cathode into a full-cell configuration (Cu@PEO/LiFePO4). The new cell demonstrated stable cycling with an average coulombic efficiency of 98.6% and capacity retention of 30% in the 200th cycle at a rate of 0.2C. These impressive enhancements in cycle life and capacity retention result from the synergy of the PEO film coating, high electrode-electrolyte interface compatibility, stable polar oligomer formation from the reduction of 1,3-dioxolane and the generation of SEI-stabilizing nitrite and nitride upon lithium nitrate reduction. Our result opens up a new route to realize anode-free batteries by modifying the copper anode with PEO to achieve ever more demanding yet safe interfacial chemistry and control of dendrite formation.

Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

NASA Astrophysics Data System (ADS)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

2017-10-01

In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

Thin film strain transducer. [suitable for in-flight measurement of scientific balloon strain

NASA Technical Reports Server (NTRS)

Rand, J. L. (Inventor)

1985-01-01

A strain transducer system and process for making same is disclosed wherein a beryllium-copper ring having four strain gages disposed thereon is electrically connected in Wheatstone bridge fashion to output instrumentation. Tabs are bonded to a balloon or like surface with strain on the surface causing bending of the ring and providing an electrical signal through the gages proportional to the surface strain. A figure is provided which illustrates a pattern of a one-half ring segment as placed on a sheet of beryllium-copper for chem-mill etch formation, prior to bending and welding of a pair of the segments to form a ring structure.

Load regulating expansion fixture

DOEpatents

Wagner, L.M.; Strum, M.J.

1998-12-15

A free standing self contained device for bonding ultra thin metallic films, such as 0.001 inch beryllium foils is disclosed. The device will regulate to a predetermined load for solid state bonding when heated to a bonding temperature. The device includes a load regulating feature, whereby the expansion stresses generated for bonding are regulated and self adjusting. The load regulator comprises a pair of friction isolators with a plurality of annealed copper members located therebetween. The device, with the load regulator, will adjust to and maintain a stress level needed to successfully and economically complete a leak tight bond without damaging thin foils or other delicate components. 1 fig.

Engineering Graphene Films from Coal

NASA Astrophysics Data System (ADS)

Vijapur, Santosh H.

Graphene is a unique material with remarkable properties suitable for a wide array of applications. Chemical vapor deposition (CVD) is a simple technique for synthesis of large area and high quality graphene films on various metal substrates. Among the metal substrates, copper has been shown to be an excellent support for the growth of graphene films. Traditionally, hydrocarbon gases are used for the graphene synthesis via CVD. Unconventional solid carbon sources such as various polymers and food waste have also shown great potential for synthesis of graphene films. Coal is one such carbon enriched and abundantly available unconventional source. Utilization of coal as a carbon source to synthesize large area, transparent, and high quality few-layer graphene films via CVD has been demonstrated in the present work. Hydrocarbon gases are released as products of coal pyrolysis at temperatures ≥400 °C. This study hypothesized that, these hydrocarbon gases act as precursors for the synthesis of graphene films on the copper substrate. Hence, atmospheric pressure CVD and low temperature of 400 °C were utilized initially for the production of graphene films. These conditions were suitable for the formation of amorphous carbon (a-C) films but not crystalline graphene films that were the objective of this work. The synthesized a-C films on the copper substrate were shown to be uniform and transparent with large surface area. The thickness and surface roughness of the a-C films were determined to have typical values of 5 nm and 0.55 nm, respectively. The a-C film has >95 % optical transmittance and sheet resistivity of 0.6 MO sq-1. These values are comparable to other carbon thin films synthesized at higher temperatures. Further, the a-C films were transferred onto any type of substrate such as silicon wafer and titanium foil, and can be utilized for diverse applications. However, crystalline graphene films were not produced by implementing atmospheric pressure CVD and low temperature operation. Annealing of copper support was required to remove the oxide layer present on its surface and low pressure operation was demonstrated to be suitable for crystalline graphene film formation. The CVD system and the synthesis procedure were modified to address these issues. This was done by increasing the synthesis temperature, incorporating a vacuum pump for low pressure operation, and implementing two step procedure of annealing the copper substrate followed by subsequent coal pyrolysis for the synthesis of crystalline graphene films. The synthesized few layer graphene films were uniform and continuous with thickness in the range of 3-7 nm. The optical transmittance and electrical conductivity measurements demonstrated that the graphene films have >95 % transparency and sheet resistivity of 5.0 kO sq-1, respectively. An investigation of growth mechanism of coal derived graphene films synthesized via CVD was conducted utilizing spectroscopy, microscopy, and chromatography techniques. Gas collection was performed at the graphene synthesis conditions utilizing the CVD reactor without vacuum in operation. Various gases released as products of coal pyrolysis in the CVD reactor were collected and analyzed using gas chromatography. The analysis showed the presence of methane, ethane, ethene, propane, propene, carbon monoxide, and carbon dioxide as coal pyrolysis products. The hydrocarbon gases act as precursors for graphene growth. Raman spectroscopy, selected area electron diffraction (SAED), and X-ray photoelectron spectroscopy (XPS) confirmed the formation of crystalline graphene films at 1055 °C and 18-30 min synthesis. The growth mechanism involves copper catalyzed reaction to produce amorphous carbon film within the first few minutes of synthesis. Raman spectroscopy and SAED validated that lower synthesis times (6-12 min) produced hybrid amorphous carbon films. This is followed by hydrogen catalyzed graphitization of the underlying carbon film to form graphene domains. Optical microscopy and Raman spectra demonstrated the formation of these oval shaped graphene domains as synthesis time was increased (18-30 min). The graphene films are formed by growth and merging of these graphene domains on the copper substrate. The growth mechanism of coal derived crystalline graphene films is presented in the current work.

Development and manufacture of reactive-transfer-printed CIGS photovoltaic modules

NASA Astrophysics Data System (ADS)

Eldada, Louay; Sang, Baosheng; Lu, Dingyuan; Stanbery, Billy J.

2010-09-01

In recent years, thin-film photovoltaic (PV) companies started realizing their low manufacturing cost potential, and grabbing an increasingly larger market share from multicrystalline silicon companies. Copper Indium Gallium Selenide (CIGS) is the most promising thin-film PV material, having demonstrated the highest energy conversion efficiency in both cells and modules. However, most CIGS manufacturers still face the challenge of delivering a reliable and rapid manufacturing process that can scale effectively and deliver on the promise of this material system. HelioVolt has developed a reactive transfer process for CIGS absorber formation that has the benefits of good compositional control, high-quality CIGS grains, and a fast reaction. The reactive transfer process is a two stage CIGS fabrication method. Precursor films are deposited onto substrates and reusable print plates in the first stage, while in the second stage, the CIGS layer is formed by rapid heating with Se confinement. High quality CIGS films with large grains were produced on a full-scale manufacturing line, and resulted in high-efficiency large-form-factor modules. With 14% cell efficiency and 12% module efficiency, HelioVolt started to commercialize the process on its first production line with 20 MW nameplate capacity.

Development of self-powered strain sensor using mechano-luminescent ZnS:Cu and mechano-optoelectronic P3HT

NASA Astrophysics Data System (ADS)

Pulliam, Elias; Hoover, George; Tiparti, Dhruv; Ryu, Donghyeon

2017-04-01

Aerospace structural systems are prone to structural damage during their use by vibration, impact, material degradation, and other factors. Due to the harsh environments in which aerospace structures operate, aerospace structures are susceptible to various types of damage and often their structural integrity is jeopardized unless damage onset is detected in timely manner. Yet, current state-of-the-art sensor technologies are still limited for structural health monitoring (SHM) of aerospace structures due to their high power consumption, need for large form factor design, and manageable integration into aerospace structures. This study proposes a design of multilayered self-powered strain sensor by coupling mechano-luminescent (ML) property of copper-doped zinc sulfide (ZnS:Cu) and mechano-optoelectronic (MO) property of poly(3-hexylthiophene) (P3HT). One functional layer of the self-powered strain sensor is ZnS:Cu-based elastomeric composites that emit light in response to mechanical deformation. Another functional layer is P3HT-based thin films that generate direct current (DC) under light illumination and DC magnitude changes with applied strain. First, ML light emission characteristics of ZnS:Cu-based composites are studied under cyclic tensile strain with two various maximum strain up to 10% and 15% at various loading frequencies from 5 Hz to 20 Hz. Second, piezo-optical properties of P3HT-based thin films are investigated by acquiring light absorption of the thin films at various strains from 0% to 2% tensile strain. Last, micro-mechanical properties of the P3HT-based thin films are characterized using nanoindentation.

Very High Performance Organic Photonic Devices

DTIC Science & Technology

2008-01-15

example, in photovoltaic cells based on copper phthalocyanine (CuPc) as the donor and 3.4.9,10-perylenetetracarboxylic bis- benzimidazole b (PTCBI) as...perylenetetracarboxylic bis- benzimidazole (PTCBI), the as- mixed D-A layer shows very poor Received: April 25, 2t(X4 grown, homogeneously Final version: September 13, 2(X04...perylenetetracarboxylic bis- benzimidazole thin-film photovoltaic cell with a patterned stripe of sputter- (PTCBI). Purified organic source materialss were loaded into

Examination of Chemical Adsorption and Marine Biofouling on Metal Surfaces Using Raman Scattering Techniques and Electrochemical Impedance Spectroscopy

DTIC Science & Technology

1991-03-14

analyses of labeled model compounds, such as the protein, RuBisCO (Ribulose Bisphosphate CarboxylaselOxygenase). (3) Examine adsorption of...coverages were determined radiometrically using tritiated RuBisCO . Although natural thin films were detectable using Raman scattering techniques...optical, electrochemical, and radiometric techniques and the protein RuBisCO as a model adsorbate on titanium, copper, and iron, we have been able to

Enhanced adhesion by high energy bombardment

NASA Technical Reports Server (NTRS)

Griffith, Joseph E. (Inventor); Qiu, Yuanxun (Inventor); Tombrello, Thomas A. (Inventor)

1984-01-01

Films (12) of gold, copper, silicon nitride, or other materials are firmly bonded to insulator substrates (12) such as silica, a ferrite, or Teflon (polytetrafluorethylene) by irradiating the interface with high energy ions. Apparently, track forming processes in the electronic stopping region cause intermixing in a thin surface layer resulting in improved adhesion without excessive doping. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters.

Annealing Effects on the Formation of Copper Oxide Thin Films

NASA Astrophysics Data System (ADS)

Marzuki, Marina; Zamzuri Mohamad Zain, Mohd; Zarul Hisham, Nurazhra; Zainon, Nooraizedfiza; Harun, Azmi; Nani Ahmad, Rozie

2018-03-01

This study approached the simple method of developing CuO thin films by thermal oxidation on pure Cu sheets. The effects of annealing temperature on the formation of CuO layers have been investigated. The oxide layers have been fabricated by annealing of Cu sheets for 5 hours at different temperatures of 980 ~ 1010 °C. The morphologies and optical properties of annealed Cu sheets were studied by using SEM and UV-Vis spectrophotometer respectively. It is revealed that the annealing temperature influence the grain growth and the grain size increases as the temperature increase. The highest grain size was observed on sample annealed at 1000 °C with average area per grain size of 0.023 mm2. Theoretically, larger grain size provides less barriers for electron mobility and increase the efficiency of solar devices. The optical absorption spectra of the oxide films was also measured. Interference pattern was noted at wavelength about 900 nm corresponding to the formation of CuO film. The interference noise observed could be due to the coarse surface and the presence of powdery oxide deposits that causes the scattering loses from the surface. CuO film obtained by this method may be further studied and exploited as low cost photovoltaic device.

Spectroscopic investigation of different concentrations of the vapour deposited copper phthalocyanine as a "guest" in polyimide matrix.

PubMed

Georgiev, Anton; Yordanov, Dancho; Dimov, Dean; Assa, Jacob; Spassova, Erinche; Danev, Gencho

2015-04-05

Nanocomposite layers 250 nm copper phthalocyanine/polyimide prepared by simultaneous vapour deposition of three different sources were studied. Different concentrations of copper phthalocyanine as a "guest" in polyimide matrix as a function of conditions of the preparation have been determined by FTIR (Fourier Transform Infrared) and UV-VIS (Ultraviolet-Visible) spectroscopies. The aim was to estimate the possibility of the spectroscopic methods for quantitative determination of the "guest" and compare with the quality of the polyimide thin films in relation to the "guest" concentration. The band at 1334 cm(-1) has been used for quantitative estimation of "guest" in polyimide matrix. The concentrations of the copper phthalocyanine less than 20% require curve fitting techniques with Fourier self deconvolution. The relationship between "guest" concentrations and degree of imidization, as well as the electronic UV-VIS spectra are discussed in relation to the composition, imidization degree and the two crystallographic modification of the embedded chromophore. Copyright © 2015 Elsevier B.V. All rights reserved.

Growth Of Single Crystalline Copper Nanowhiskers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolb, Matthias; Richter, Gunther

2010-11-24

Nanowhiskers are defect free single crystals with high aspect ratios and as result exhibit superior physical, e.g. mechanical properties. This paper sheds light on the kinetics of copper nanowhisker growth and thickening. Whisker growth was provoked by covering silicon wafers with a thin carbon film and subsequently coating them with copper by molecular beam epitaxy. The whiskers grown were examined by scanning electron microscopy and the length and diameter were measured as a function of the amount of copper deposited. The experiments show that nanowhisker growth follows Ruth and Hirth's growth model. A fit of the model parameters to themore » acquired data shows that adsorption of atoms on the substrate and on the whisker surface, with subsequent surface diffusion to the whisker tip, delivers by far the greatest portion of material for whisker growth. Additionally, the experiments demonstrate that the crystallographic orientation of the substrate surface greatly influences the growth rate in the early stage of whisker growth.« less

The Formation, Transport Properties and Microstructure of 45 Degrees (001) Tilt Grain Boundaries in Yttrium BARIUM(2) COPPER(3) OXYGEN(7-X) Thin Films

NASA Astrophysics Data System (ADS)

Vuchic, Boris Vukan

1995-01-01

Most high angle grain boundaries in high-T _{c} superconductors exhibit weak link behavior. The Josephson-like properties of these grain boundaries can be used for many device applications such as superconducting quantum interference devices (SQUIDs). The structure-property relationship of different types of 45 ^circ (001) YBa_2 Cu_3O_{7-x} thin film grain boundary junctions are examined to study their weak link nature. A technique, termed sputter-induced epitaxy, is developed to form 45^circ (001) tilt grain boundaries in YBa_2Cu _3O_{7-x} thin films on (100) MgO substrates. A low voltage ion bombardment pre-growth substrate treatment is used to modify the epitaxial orientation relationship between the thin film and the substrate in selected regions. By modifying the orientation of the thin film, grain boundary junctions can be placed in any configuration on the substrate. A variety of pre-growth sputtering conditions in conjunction with atomic force microscopy and Rutherford backscatter spectrometry are used to determine the role of the ions in modifying the substrate surface. Sputter-induced epitaxy is extended to a multilayer MgO/LaAlO_3 substrate, allowing integration of the sputter -induced epitaxy junctions into multilayer structures. The low temperature transport properties of the sputter-induced epitaxy junctions and a set of bi-epitaxial grain boundaries are studied. Individual grain boundaries are isolated and characterized for resistance vs. temperature, current vs. voltage as a function of temperature and magnetic field behavior. Resistive and superconducting grain boundaries are compared. Microstructural analysis is performed using scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy (HREM). Marked differences are observed in the microstructure of resistive and superconducting grain boundaries. HREM studies suggest the importance of the local atomic scale structure of the grain boundary in transport properties. A phenomenological grain boundary model is proposed to describe the structure -property relationship of the boundaries.

Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muhunthan, N.; Singh, Om Pal; Toutam, Vijaykumar, E-mail: toutamvk@nplindia.org

2015-10-15

Graphical abstract: Experimental setup for conducting AFM (C-AFM). - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film was grown by reactive co-sputtering. • The electronic properties were probed using conducting atomic force microscope, scanning Kelvin probe microscopy and scanning capacitance microscopy. • C-AFM current flow mainly through grain boundaries rather than grain interiors. • SKPM indicated higher potential along the GBs compared to grain interiors. • The SCM explains that charge separation takes place at the interface of grain and grain boundary. - Abstract: Electrical characterization of grain boundaries (GB) of Cu-deficient CZTS (Copper Zinc Tin Sulfide) thin films wasmore » done using atomic force microscopic (AFM) techniques like Conductive atomic force microscopy (CAFM), Kelvin probe force microscopy (KPFM) and scanning capacitance microscopy (SCM). Absorbance spectroscopy was done for optical band gap calculations and Raman, XRD and EDS for structural and compositional characterization. Hall measurements were done for estimation of carrier mobility. CAFM and KPFM measurements showed that the currents flow mainly through grain boundaries (GB) rather than grain interiors. SCM results showed that charge separation mainly occurs at the interface of grain and grain boundaries and not all along the grain boundaries.« less

High-performance, flexible, deployable array development for space applications

NASA Technical Reports Server (NTRS)

Gehling, Russell N.; Armstrong, Joseph H.; Misra, Mohan S.

1994-01-01

Flexible, deployable arrays are an attractive alternative to conventional solar arrays for near-term and future space power applications, particularly due to their potential for high specific power and low storage volume. Combined with low-cost flexible thin-film photovoltaics, these arrays have the potential to become an enabling or an enhancing technology for many missions. In order to expedite the acceptance of thin-film photovoltaics for space applications, however, parallel development of flexible photovoltaics and the corresponding deployable structure is essential. Many innovative technologies must be incorporated in these arrays to ensure a significant performance increase over conventional technologies. For example, innovative mechanisms which employ shape memory alloys for storage latches, deployment mechanisms, and array positioning gimbals can be incorporated into flexible array design with significant improvement in the areas of cost, weight, and reliability. This paper discusses recent activities at Martin Marietta regarding the development of flexible, deployable solar array technology. Particular emphasis is placed on the novel use of shape memory alloys for lightweight deployment elements to improve the overall specific power of the array. Array performance projections with flexible thin-film copper-indium-diselenide (CIS) are presented, and government-sponsored solar array programs recently initiated at Martin Marietta through NASA and Air Force Phillips Laboratory are discussed.

Steps Towards Industrialization of Cu-III-VI2Thin-Film Solar Cells:Linking Materials/Device Designs to Process Design For Non-stoichiometric Photovoltaic Materials.

PubMed

Hwang, Huey-Liang; Chang, Hsueh-Hsin; Sharma, Poonam; Letha, Arya Jagadhamma; Shao, Lexi; Zhang, Yafei; Tseng, Bae-Heng

2016-10-01

The concept of in-line sputtering and selenization become industrial standard for Cu-III-VI 2 solar cell fabrication, but still it's very difficult to control and predict the optical and electrical parameters, which are closely related to the chemical composition distribution of the thin film. The present review article addresses onto the material design, device design and process design using parameters closely related to the chemical compositions. Its variation leads to change in the Poisson equation, current equation, and continuity equation governing the device design. To make the device design much realistic and meaningful, we need to build a model that relates the opto-electrical properties to the chemical composition. The material parameters as well as device structural parameters are loaded into the process simulation to give a complete set of process control parameters. The neutral defect concentrations of non-stoichiometric CuMSe 2 (M = In and Ga) have been calculated under the specific atomic chemical potential conditions using this methodology. The optical and electrical properties have also been investigated for the development of a full-function analytical solar cell simulator. The future prospects regarding the development of copper-indium-gallium-selenide thin film solar cells have also been discussed.

Bioaccumulation Using Surrogate Samplers (Bass): Evaluation Of A Passive Sampler As An Alternative Monitoring Tool For Environmental Contaminants At The Savannah River Site

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paller, M.; Knox, A.; Kuhne, W.

2015-10-15

DOE sites conduct traditional environmental monitoring programs that require collecting, processing, and analyzing water, sediment, and fish samples. However, recently developed passive sampling technologies, such as Diffusive Gradient in Thin films (DGT), may measure the chemical phases that are available and toxic to organisms (the bioavailable fraction), thereby producing more accurate and economical results than traditional methods.  Our laboratory study showed that dissolved copper concentrations measured by DGT probes were strongly correlated with the uptake of copper by Lumbriculus variegatus, an aquatic worm, and with concentrations of copper measured by conventional methods.  Dissolved copper concentrations in DGT probes increased with timemore » of exposure, paralleling the increase in copper with time that ocurred in Lumbriculus.  Additional studies with a combination of seven dissolved metals showed similar results.  These findings support the use of DGT as a biomimetic monitoring tool and provide a basis for refinement of these methods for cost-effective environmental monitoring at DOE sites.« less

Superconducting 500 MHz accelerating copper cavities sputter-coated with niobium films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benvenuti, C.; Circelli, N.; Hauer, M.

Thermal breakdown induced either by electron loading or by local defects of enhanced RF losses limits the accelerating field of superconducting niobium cavities. Replacing niobium with a material of higher thermal conductivity would be highly desirable to increase the maximum field. Therefore, cavities made of OFHC copper were coated by D.C. bias sputtering with a thin niobium film (1.5 to 5 ..mu..). Accelerating fields up to 8.6 MVm/sup -1/ were obtained without observing any field breakdown, the limitation being due to the available rf power. The Q values achieved at 4.2 K and low field were similar to those ofmore » niobium sheet cavities (i.e. about 2 x 10/sup 9/), but a fast initial decrease of Q to about 10/sup 9/ was reproducibly experienced. Subsequent inspection of regions of enhanced rf losses revealed defects the origin of which is under study. The apparatus used for coating the cavities and the results obtained are presented and discussed.« less

Extracting the Density of States of Copper Phthalocyanine at the SiO2 Interface with Electronic Sum Frequency Generation.

PubMed

Pandey, Ravindra; Moon, Aaron P; Bender, Jon A; Roberts, Sean T

2016-03-17

Organic semiconductors (OSCs) constitute an attractive platform for optoelectronics design due to the ease of their processability and chemically tunable properties. Incorporating OSCs into electrical circuits requires forming junctions between them and other materials, yet the change in dielectric properties about these junctions can strongly perturb the electronic structure of the OSC. Here we adapt an interface-selective optical technique, electronic sum frequency generation (ESFG), to the study of a model OSC thin-film system, copper phthalocyanine (CuPc) deposited on SiO2. We find that by modeling the thickness dependence of our measured spectra, we can identify changes in CuPc's electronic density of states at both its buried interface with SiO2 and air-exposed surface. Our work demonstrates that ESFG can be used to noninvasively probe the interfacial electronic structure of optically thick OSC films, indicating that it can be used for the study of OSC-based optoelectronics in situ.

Biofunctionalization of a “Clickable” Organic Layer Photochemically Grafted on Titanium Substrates

PubMed Central

Li, Yan; Zhao, Meirong; Wang, Jun; Liu, Kai; Cai, Chengzhi

2011-01-01

We have developed a general method combining photochemical grafting and copper-catalyzed click chemistry for biofunctionalization of titanium substrates. The UV-activated grafting of an α,ω-alkenyne onto TiO2/Ti substrates provided a “clickable” thin film platform. The selective attachment of the vinyl end of the molecule to the surface was achieved by masking the alkynyl end with a trimethylgermanyl (TMG) protecting group. Subsequently, various oligo(ethylene glycol) (OEG) derivatives terminated with an azido group were attached to the TMG-alkynyl modified titanium surface via a one-pot deprotection/click reaction. The films were characterized by X-ray photoelectron spectroscopy (XPS), contact angle goniometry, ellipsometry, and atomic force microscopy (AFM). We showed that the titanium surface presenting click-immobilized OEG substantially suppressed the nonspecific attachment of protein and cells as compared to the unmodified titanium substrate. Furthermore, glycine-arginine-glycine-aspartate (GRGD), a cell adhesion peptide, was coimmobilized with OEG on the platform. We demonstrated that the resultant GRGD-presenting thin film on Ti substrates can promote the specific adhesion and spreading of AsPC-1 cells. PMID:21417429

Cold-stage microscopy system for fast-frozen liquids.

PubMed

Talmon, Y; Davis, H T; Scriven, L E; Thomas, E L

1979-06-01

The least artifact-laden fixation technique for examining colloidal suspensions, microemulsions, and other microstructured liquids in the electron microscope appears to be thermal fixation, i.e., ultrafast freezing of the liquid specimen. For rapid-enough cooling and for observation in TEM/STEM a thin sample is needed. The need is met by trapping a thin layer ( approximately 100 nm) of liquid between two polyimide films ( approximately 40 nm thickness) mounted on copper grids and immersing the resulting sandwich in liquid nitrogen at its melting point. For liquids containing water, polyimides films are used since this polymer is far less susceptible to the electron beam damage observed for the commonly used polymer films such as Formvar and collodion in contact with ice. Transfer of the frozen sample into the microscope column without deleterious frost deposition and warming is accomplished with a new transfer module for the cooling stage of the JEOL JEM-100CX microscope, which makes a true cold stage out of a device originally intended for cooling specimens inside the column. Sample results obtained with the new fast-freeze, cold-stage microscopy system are given.

Chemical synthesis of flower-like hybrid Cu(OH)2/CuO electrode: Application of polyvinyl alcohol and triton X-100 to enhance supercapacitor performance.

PubMed

Shinde, S K; Fulari, V J; Kim, D-Y; Maile, N C; Koli, R R; Dhaygude, H D; Ghodake, G S

2017-08-01

In this research article, we report hybrid nanomaterials of copper hydroxide/copper oxide (Cu(OH) 2 /CuO). A thin films were prepared by using a facile and cost-effective successive ionic layer adsorption and reaction (SILAR) method. As-synthesized and hybrid Cu(OH) 2 /CuO with two different surfactants polyvinyl alcohol (PVA) and triton-X 100 (TRX-100) was prepared having distinct morphological, structural, and supercapacitor properties. The surface of the thin film samples were examined by scanning electron microscopy (SEM). A nanoflower-like morphology of the Cu(OH) 2 /CuO nanostructures arranged vertically was evidenced on the stainless steel substrate. The surface was well covered by nanoflake-like morphology and formed a uniform Cu(OH) 2 /CuO nanostructures after treating with surfactants. X-ray diffraction patterns were used to confirm the hybrid phase of Cu(OH) 2 /CuO materials. The electrochemical properties of the pristine Cu(OH) 2 /CuO, PVA:Cu(OH) 2 /CuO, TRX-100:Cu(OH) 2 /CuO films were observed by cyclic voltammetry, galvanostatic charge/discharge, and electrochemical impedance spectroscopy technique. The electrochemical examination reveals that the Cu(OH) 2 /CuO electrode has excellent specific capacitance, 292, 533, and 443Fg -1 with pristine, PVA, and TRX-100, respectively in 1M Na 2 SO 4 electrolyte solution. The cyclic voltammograms (CV) of Cu(OH) 2 /CuO electrode shows positive role of the PVA and TRX-100 to enhance supercapacitor performance. Copyright © 2017 Elsevier B.V. All rights reserved.

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells.

PubMed

Wong, Terence K S; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K

2016-04-07

The current state of thin film heterojunction solar cells based on cuprous oxide (Cu₂O), cupric oxide (CuO) and copper (III) oxide (Cu₄O₃) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu₂O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of Al x Ga 1- x O onto thermal Cu₂O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu₂O nanopowder. CuO/Cu₂O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu₄O₃/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10 -2 %.

Copper-mercury film electrode for cathodic stripping voltammetric determination of Se(IV).

PubMed

Sladkov, Vladimir; David, François; Fourest, Blandine

2003-01-01

The copper-mercury film electrode has been suggested for the determination of Se(IV) in a wide range of concentration from 1x10(-9) to 1x10(-6) mol L(-1)by square-wave cathodic stripping voltammetry. Insufficient reproducibility and sensitivity of the mercury film electrode have been overcome by using copper(II) ions during the plating procedure. Copper(II) has been found to be reduced and form a reproducible copper-mercury film on a glassy carbon electrode surface. The plating potential and time, the concentration of copper(II) and the concentration of the supporting electrolyte have been optimised. Microscopy has been used for a study of the morphology of the copper-mercury film. It has been found that it is the same as for the mercury one. The preconcentration step consists in electrodeposition of copper selenide on the copper-mercury film. The relative standard deviation is 4.3% for 1x10(-6) mol L(-1) of Se(IV). The limit of detection is 8x10(-10) mol L(-1) for 5 min of accumulation.

Effect of ultra-thin liner materials on copper nucleation/wetting and copper grain growth

NASA Astrophysics Data System (ADS)

Mueller, Justin E.

One of the key challenges facing future integrated circuit copper (Cu) interconnect manufacturing is to achieve uniform coverage of PVD Cu seed layer at minimum thickness on a liner and barrier. We have therefore characterized the nucleation and wetting of PVD Cu on various liner surfaces by monitoring in-situ the film's electrical conductance during the initial stages of deposition (0 to 25 nm). Our results showed that the Cu wetting is sensitive to the Cu/liner interfacial properties, while the nucleation depends on the liner microstructure. It was found that a ruthenium (Ru) liner has a good Cu wetting characteristic and allows at the onset nearly layer by layer Cu growth. Because of good wetting, Cu growth is not significantly affected by Ru liner grain size. Tantalum (Ta), however, exhibits poor Cu wetting, which results in an initial stage of three dimensional island growth of Cu. In this case, Cu island coalescing occurs sooner, at a smaller Cu film thickness, when the nucleation site density is increased with a smaller grain size Ta liner. To optimize the seed layer's conductance and step coverage, a liner with combined properties of Ta (for adhesion and barrier formation) and Ru (for wetting and grain growth) may be desired. A hybrid magnetron target has been developed for depositing TaRu liner films at various compositions. The microstructure of the compound liners and their effects on the overgrown Cu seed layer over a wide range of TaRu composition is presented. It was found that below 80% Ru concentration, TaRu films are amorphous. An amorphous liner results in poor Cu nucleation as compared with a crystalline Ta or Ru liner. A comparison of the microstructure of thin Cu films deposited on bcc alpha-Ta and tetragonal beta-Ta surfaces has been carried out. Cu resistivity is lower by 10-15%, accompanied by larger Cu grain size, in as-deposited Cu films of various thickness' (30-120 nm) on beta-Ta as compared to those deposited on alpha-Ta. This is due to the presence of an epitaxial relationship between Cu (111) and beta-Ta (002) planes. After annealing, the difference was only seen in films thinner than 60 nm. Results were confirmed when Cu film resistance was measured in-situ during deposition on each phase of Ta liner. Serpentine interconnect line structures of various line widths and aspect ratios were fabricated using either alpha- or beta-Ta liners, and subjected to a similar heat treatment. Results showed a similar ˜10% lower resistivity in the thinnest interconnects (˜40 nm) when a beta-Ta liner was used.

Photo-thermal processing of semiconductor fibers and thin films

NASA Astrophysics Data System (ADS)

Gupta, Nishant

Furnace processing and rapid thermal processing (RTP) have been an integral part of several processing steps in semiconductor manufacturing. The performance of RTP techniques can be improved many times by exploiting quantum photo-effects of UV and vacuum ultraviolet (VUV) photons in thermal processing and this technique is known as rapid photo-thermal processing (RPP). As compared to furnace processing and RTP, RPP provides higher diffusion coefficient, lower stress and lower microscopic defects. In this work, a custom designed automated photo assisted processing system was built from individual parts and an incoherent light source. This photo-assisted processing system is used to anneal silica clad silicon fibers and deposit thin-films. To the best of our knowledge, incoherent light source based rapid photo-thermal processing (RPP) was used for the first time to anneal glass-clad silicon core optical fibers. X-ray diffraction examination, Raman spectroscopy and electrical measurements showed a considerable enhancement of structural and crystalline properties of RPP treated silicon fibers. Photons in UV and vacuum ultraviolet (VUV) regions play a very important role in improving the bulk and carrier transport properties of RPP-treated silicon optical fibers, and the resultant annealing permits a path forward to in situ enhancement of the structure and properties of these new crystalline core optical fibers. To explore further applications of RPP, thin-films of Calcium Copper Titanate (CaCu3Ti4O12) or CCTO and Copper (I) Oxide (Cu2O) were also deposited using photo-assisted metal-organic chemical vapor deposition (MOCVD) on Si/SiO2 and n-Si substrate respectively. CCTO is one of the most researched giant dielectric constant materials in recent years. The given photo-assisted MOCVD approach provided polycrystalline CCTO growth on a SiO2 surface with grain sizes as large as 410 nm. Copper (I) oxide (Cu2O) is a direct band gap semiconductor with p-type conductivity and is a potential candidate for multi-junction solar cells. X-ray diffraction study revealed a preferred orientation, as (200) oriented crystals of Cu2O are grown on both substrates. Also, electrical characterization of Cu2O/n-Si devices showed the lowest saturation current density of 1.5x10-12 A/cm 2 at zero bias. As a result, photo-assisted thermal processing has the potential of making the process more effective with enhanced device performance.

Search for ferromagnetic order in overdoped copper-oxide superconductors

DOE PAGES

Wu, J.; Lauter, V.; Ambaye, H.; ...

2017-04-05

In copper-oxides that show high-temperature superconductivity (HTS), the critical temperature (Tc) has a dome-shaped doping dependence. The cause of demise of both Tc and superfluid density ns on the overdoped side is a major puzzle. A recent study of transport and diamagnetism in a large number of overdoped La2-xSrxCuO4 (LSCO) films shows that this cannot be accounted for by disorder within the conventional Bardeen-Cooper-Schrieffer theory. This brings to focus an alternative explanation — competition of HTS with ferromagnetic order, fluctuating in superconducting samples and static beyond the superconductor-to-metal transition. Here, we examine this proposal by growing single-crystal LSCO thin filmsmore » with doping on both sides of the transition by molecular beam epitaxy, and using polarized neutron reflectometry to measure their magnetic moments. In a heavily overdoped, metallic but non-superconducting LSCO (x = 0.35) film, the spin asymmetry of reflectivity shows a very small static magnetic moment (~2 emu/cm3). Less-doped, superconducting LSCO films show no magnetic moment in neutron reflectivity, both above and below Tc. Therefore, the collapse of HTS with overdoping is not caused by competing ferromagnetic order.« less

The role of interparticle heterogeneities in the selenization pathway of Cu-Zn-Sn-S nanoparticle thin films: A real-time study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carter, Nathaniel J.; Mainz, Roland; Walker, Bryce C.

2015-06-10

Real-time energy dispersive x-ray diffraction (EDXRD) analysis has been utilized to observe the selenization of Cu-Zn-Sn-S nanoparticle films coated from three nanoparticle populations: Cu- and Sn-rich particles roughly 5 nm in size, Zn-rich nanoparticles ranging from 10 to 20 nm in diameter, and a mixture of both types of nanoparticles (roughly 1:1 by mass), which corresponds to a synthesis recipe yielding CZTSSe solar cells with reported total-area efficiencies as high as 7.9%. The EDXRD studies presented herein show that the formation of copper selenide intermediates during the selenization of mixed-particle films can be primarily attributed to the small, Cu- andmore » Sn-rich particles. Moreover, the formation of these copper selenide phases represents the first stage of the CZTSSe grain growth mechanism. The large, Zn-rich particles subsequently contribute their composition to form micrometer-sized CZTSSe grains. In conclusion, these findings enable further development of a previously proposed selenization pathway to account for the roles of interparticle heterogeneities, which in turn provides a valuable guide for future optimization of processes to synthesize high quality CZTSSe absorber layers.« less

Low-cost optical fabrication of flexible copper electrode via laser-induced reductive sintering and adhesive transfer

NASA Astrophysics Data System (ADS)

Back, Seunghyun; Kang, Bongchul

2018-02-01

Fabricating copper electrodes on heat-sensitive polymer films in air is highly challenging owing to the need of expensive copper nanoparticles, rapid oxidation of precursor during sintering, and limitation of sintering temperature to prevent the thermal damage of the polymer film. A laser-induced hybrid process of reductive sintering and adhesive transfer is demonstrated to cost-effectively fabricate copper electrode on a polyethylene film with a thermal resistance below 100 °C. A laser-induced reductive sintering process directly fabricates a high-conductive copper electrode onto a glass donor from copper oxide nanoparticle solution via photo-thermochemical reduction and agglomeration of copper oxide nanoparticles. The sintered copper patterns were transferred in parallel to a heat-sensitive polyethylene film through self-selective surface adhesion of the film, which was generated by the selective laser absorption of the copper pattern. The method reported here could become one of the most important manufacturing technologies for fabricating low-cost wearable and disposable electronics.

Effects of growth temperatures on the physical properties of Cu2ZnSnS4 thin films deposited through spray pyrolysis for solar cell applications

NASA Astrophysics Data System (ADS)

Fadavieslam, M. R.; Keshavarz, S.

2018-02-01

This paper reports the effects of substrate temperature on the structural, optical, and electrical properties of Cu2ZnSnS4 (CZTS) thin films deposited on soda lime glass through spray pyrolysis without sulfurization. Substrate temperatures ranged from 250 to 500 °C at a step of 50 °C, and a precursor solution was prepared by dissolving copper chloride, zinc acetate, zinc chloride, and thiourea in ethanol and di-ionized water. The films were characterized through X-ray diffraction (XRD), field emission scanning electron microscopy, ultraviolet-visible spectroscopy, and electrical resistance and Hall effect measurements, respectively, obtained by two-point probe and van der Pauw techniques. XRD revealed the formation of polycrystalline CZTS thin films and the appearance of relatively intense and sharp diffraction peaks at (112), (200), (220), and (312) of a kesterite phase with (112) preferential orientation, in which the crystalline degree increased as substrate temperature increased. Surface morphological analysis demonstrated the formation of a smooth, compact, and uniform CZTS surface. When substrate temperature increased from 250 to 500 °C, single-crystal grains increased from 6.38 to 28 nm, carrier concentration increased from 3.4 × 1017 to 2.36 × 1019 cm-3, Hall mobility increased from 30.96 to 68.52 cm2/V.S, optical band gap decreased from 1.74 to 1.14 eV, and resistivity decreased from 0.59 to 3.87 × 10-3 Ωcm. Hall effect analysis indicated that the films exhibited p-type conductivity.

Laser ablated high T(sub c) superconducting thin YBa2Cu3O(7-x) films on substrates suitable for microwave applications

NASA Astrophysics Data System (ADS)

Warner, J. D.; Meola, J. E.; Jenkins, K. A.; Bhasin, K. B.

1990-04-01

The development of high temperature superconducting YBa2Cu3O(7-x) thin films on substrates suitable for microwave applications is of great interest for evaluating their applications for space radar, communication, and sensor systems. Thin films of YBa2Cu3O(7-x) were formed on SrTiO3, ZrO2, MgO, and LaAlO3 substrates by laser ablation. The wavelength used was 248 nm from a KrF excimer laser. During deposition the films were heated to 600 C in a flowing oxygen environment, and required no post annealing. The low substrate temperature during deposition with no post annealing gave films which were smooth, which had their c-axis aligned to the substrates, and which had grains ranging from 0.2 to 0.5 microns in size. The films being c-axis aligned gave excellent surface resistance at 35 GHz which was lower than that of copper at 77 K. At present, LaAlO3 substrates with a dielectric constant of 22, appears suitable as a substrate for microwave and electronic applications. The films were characterized by resistance-temperature measurements, scanning electron microscopy, and x ray diffraction. The highest critical transition temperatures (T sub c) are above 89 K for films on SrTiO3 and LaAlO3, above 88 K for ZrO2, and above 86 K for MgO. The critical current density (J sub c) of the films on SrTiO3 is above 2 x 10(exp 6) amperes/sq cm at 77 K. The T(sub c) and J(sub c) are reported as a function of laser power, composition of the substrate, and temperature of the substrate during deposition.

Characterization of thin films of the solid electrolyte Li(x)Mg(1-2x)Al(2+x)O4 (x = 0, 0.05, 0.15, 0.25).

PubMed

Put, Brecht; Vereecken, Philippe M; Mees, Maarten J; Rosciano, Fabio; Radu, Iuliana P; Stesmans, Andre

2015-11-21

RF-sputtered thin films of spinel Li(x)Mg(1-2x)Al(2+x)O4 were investigated for use as solid electrolyte. The usage of this material can enable the fabrication of a lattice matched battery stack, which is predicted to lead to superior battery performance. Spinel Li(x)Mg(1-2x)Al(2+x)O4 thin films, with stoichiometry (x) ranging between 0 and 0.25, were formed after a crystallization anneal as shown by X-ray diffraction and transmission electron microscopy. The stoichiometry of the films was evaluated by elastic recoil detection and Rutherford backscattering and found to be slightly aluminum rich. The excellent electronic insulation properties were confirmed by both current-voltage measurements as well as by copper plating tests. The electrochemical stability window of the material was probed using cyclic voltammetry. Lithium plating and stripping was observed together with the formation of a Li-Pt alloy, indicating that Li-ions passed through the film. This observation contradicted with impedance measurements at open circuit potential, which showed no apparent Li-ion conductivity of the film. Impedance spectroscopy as a function of potential showed the occurrence of Li-ion intercalation into the Li(x)Mg(1-2x)Al(2+x)O4 layers. When incorporating Li-ions in the material the ionic conductivity can be increased by 3 orders of magnitude. Therefore it is anticipated that the response of Li(x)Mg(1-2x)Al(2+x)O4 is more adequate for a buffer layer than as the solid electrolyte.

Dynamics of the evaporative dewetting of a volatile liquid film confined within a circular ring.

PubMed

Sun, Wei; Yang, Fuqian

2015-04-07

The dewetting dynamics of a toluene film confined within a copper ring on a deformable PMMA film is studied. The toluene film experiences evaporation and dewetting, which leads to the formation of a circular contact line around the center of the copper ring. The contact line recedes smoothly toward the copper ring at a constant velocity until reaching a dynamic "stick" state to form the first circular polymer ridge. The average receding velocity is found to be dependent on the dimensions of the copper ring (the copper ring diameter and the cross-sectional diameter of the copper wire) and the thickness of the PMMA films. A model is presented to qualitatively explain the evaporative dewetting phenomenon.

Reliability of Multilayer Copper/Polyimide

DTIC Science & Technology

1993-11-01

LOIS H. WALSH R eliability R esearch E ng ineer -, . .....................-------- - - Reliability Physics Branch i-1’ , ý, Ay cci~i• es "AL f, , or Dist...average of 925 hours The chamber "as operated at 85 C󈨙 10 r h All the samples showed initial dielectric constant values consistent w%,ith previous...19. Matsumoto, 0., Katagiri, T., Thin Solid Films, 146, 283 (1987) 20. Malladi , D.P., J Membrane Sci., 19, 209 (1984) 21. Schubert, P.J., Nevin, J.H

Cost Benefit Analysis of Integrated COTS Energy- Related Technologies for Army’s Force Provider Module

DTIC Science & Technology

2009-09-01

Year Defense Plan (FYDP), on which the Department of Defense operates, subsequently needs 26 Richard G. Lugar, U.S. Senator for Indiana , “U.S...mature thin-film technologies exist such as Amorphous Silicon (a-Si), Cadmium Telluride (CdTe), and Copper Indium Gallium (di) Selenide (CIGS), all...cheaper processing, lower material costs, and is free of the environmental and health hazard issues of cadmium . Amorphous silicon coupled with

Design and Optimization of Copper Indium Gallium Selenide Thin Film Solar Cells

DTIC Science & Technology

2015-09-01

determined by the intensity of the illumination that the solar cell is exposed to. The diffusion lengths L can be further defined by n n nL D τ...absorbers with graded Ga concentrations. (3) Back Contact Model Models for back contact silicon solar cells have been created with results that closely...Radiation. New York, NY: Academic Press, 2012. [12] B. Richards, “Enhancing the performance of silicon solar cells via the application of passive

Final Report: Sintered CZTS Nanoparticle Solar Cells on Metal Foil; July 26, 2011 - July 25, 2012

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leidholm, C.; Hotz, C.; Breeze, A.

2012-09-01

This is the final report covering 12 months of this subcontract for research on high-efficiency copper zinc tin sulfide (CZTS)-based thin-film solar cells on flexible metal foil. Each of the first three quarters of the subcontract has been detailed in quarterly reports. In this final report highlights of the first three quarters will be provided and details will be given of the final quarter of the subcontract.

In situ frustum indentation of nanoporous copper thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Ran; Pathak, Siddhartha; Mook, William M.

Mechanical properties of thin films are often obtained solely from nanoindentation. At the same time, such measurements are characterized by a substantial amount of uncertainty, especially when mean pressure or hardness are used to infer uniaxial yield stress. In this paper we demonstrate that indentation with a pyramidal flat tip (frustum) indenter near the free edge of a sample can provide a significantly better estimate of the uniaxial yield strength compared to frequently used Berkovich indenter. This is first demonstrated using a numerical model for a material with an isotropic pressure sensitive yield criterion. Numerical simulations confirm that the indentermore » geometry provides a clear distinction of the mean pressure at which a material transitions to inelastic behavior. The mean critical pressure is highly dependent on the plastic Poisson ratio ν p so that at the 1% offset of normalized indent depth, the critical pressure p m c normalized to the uniaxial yield strength σ 0 is 1 < p m c/σ 0 < 1.3 for materials with 0 < ν p < 0.5. Choice of a frustum over Berkovich indenter reduces uncertainty in hardness by a factor of 3. These results are used to interpret frustum indentation experiments on nanoporous (NP) Copper with struts of typical diameter of 45 nm. An estimate of the yield strength of NP Copper is obtained 230 MPa < σ 0 < 300 MPa. Edge indentation further allows one to obtain in-plane strain maps near the critical pressure. Finally, comparison of the experimentally obtained in-plane strain maps of NP Cu during deformation and the strain field for different plastic Poisson ratios suggest that this material has a plastic Poisson ratio of the order of 0.2–0.3. However, existing constitutive models may not adequately capture post-yield behavior of NP metals.« less

In situ frustum indentation of nanoporous copper thin films

DOE PAGES

Liu, Ran; Pathak, Siddhartha; Mook, William M.; ...

2017-07-24

Mechanical properties of thin films are often obtained solely from nanoindentation. At the same time, such measurements are characterized by a substantial amount of uncertainty, especially when mean pressure or hardness are used to infer uniaxial yield stress. In this paper we demonstrate that indentation with a pyramidal flat tip (frustum) indenter near the free edge of a sample can provide a significantly better estimate of the uniaxial yield strength compared to frequently used Berkovich indenter. This is first demonstrated using a numerical model for a material with an isotropic pressure sensitive yield criterion. Numerical simulations confirm that the indentermore » geometry provides a clear distinction of the mean pressure at which a material transitions to inelastic behavior. The mean critical pressure is highly dependent on the plastic Poisson ratio ν p so that at the 1% offset of normalized indent depth, the critical pressure p m c normalized to the uniaxial yield strength σ 0 is 1 < p m c/σ 0 < 1.3 for materials with 0 < ν p < 0.5. Choice of a frustum over Berkovich indenter reduces uncertainty in hardness by a factor of 3. These results are used to interpret frustum indentation experiments on nanoporous (NP) Copper with struts of typical diameter of 45 nm. An estimate of the yield strength of NP Copper is obtained 230 MPa < σ 0 < 300 MPa. Edge indentation further allows one to obtain in-plane strain maps near the critical pressure. Finally, comparison of the experimentally obtained in-plane strain maps of NP Cu during deformation and the strain field for different plastic Poisson ratios suggest that this material has a plastic Poisson ratio of the order of 0.2–0.3. However, existing constitutive models may not adequately capture post-yield behavior of NP metals.« less

Design, Fabrication and Characterization of Thin Film Structures through Oxidation Kinetics

NASA Astrophysics Data System (ADS)

Diaz Leon, Juan Jose

Materials science and engineering is devoted to the understanding of the physics and chemistry of materials at the mesoscale and to applying that knowledge into real-life applications. In this work, different oxide materials and different oxidation methods are studied from a materials science point of view and for specific applications. First, the deposition of complex metal oxides is explored for solar energy concentration. This requires a number of multi-cation oxide structures such as thin-film dielectric barriers, low loss waveguides or the use of continuously graded composition oxides for antireflection coatings and light concentration. Then, oxidation via Joule heating is used for the self-alignment of a selector on top of a memristor structure on a nanovia. Simulations are used to explore the necessary voltage for the insulator-to-metal transition temperature of NbO2 using finite element analysis, followed by the fabrication and the characterization of such a device. Finally, long-term copper oxidation at room temperature and pressure is studied using optical techniques. Alternative characterization techniques are used to confirm the growth rate and phase change, and an application of copper oxide as a volatile conductive bridge is shown. All these examples show how the combination of novel simulation, fabrication and characterization techniques can be used to understand physical mechanisms and enable disruptive technologies in fields such as solar cells, light emitting diodes, photodetectors or memory devices.

Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires.

PubMed

El Mel, A A; Buffière, M; Bouts, N; Gautron, E; Tessier, P Y; Henzler, K; Guttmann, P; Konstantinidis, S; Bittencourt, C; Snyders, R

2013-07-05

The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.

Photoresist-Free Patterning by Mechanical Abrasion of Water-Soluble Lift-Off Resists and Bare Substrates: Toward Green Fabrication of Transparent Electrodes

PubMed Central

Printz, Adam D.; Chan, Esther; Liong, Celine; Martinez, René S.; Lipomi, Darren J.

2013-01-01

This paper describes the fabrication of transparent electrodes based on grids of copper microwires using a non-photolithographic process. The process—“abrasion lithography”—takes two forms. In the first implementation (Method I), a water-soluble commodity polymer film is abraded with a sharp tool, coated with a conductive film, and developed by immersion in water. Water dissolves the polymer film and lifts off the conductive film in the unabraded areas. In the second implementation (Method II), the substrate is abraded directly by scratching with a sharp tool (i.e., no polymer film necessary). The abraded regions of the substrate are recessed and roughened. Following deposition of a conductive film, the lower profile and roughened topography in the abraded regions prevents mechanical exfoliation of the conductive film using adhesive tape, and thus the conductive film remains only where the substrate is scratched. As an application, conductive grids exhibit average sheet resistances of 17 Ω sq–1 and transparencies of 86% are fabricated and used as the anode in organic photovoltaic cells in concert with the conductive polymer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). Compared to devices in which PEDOT:PSS alone serves as an anode, devices comprising grids of copper/nickel microwires and PEDOT:PSS exhibit lowered series resistance, which manifests in greater fill factor and power conversion efficiency. This simple method of forming micropatterns could find use in applications where cost and environmental impact should be minimized, especially as a potential replacement for the transparent electrode indium tin oxide (ITO) in thin-film electronics over large areas (i.e., solar cells) or as a method of rapid prototyping for laboratory-scale devices. PMID:24358321

Photoresist-free patterning by mechanical abrasion of water-soluble lift-off resists and bare substrates: toward green fabrication of transparent electrodes.

PubMed

Printz, Adam D; Chan, Esther; Liong, Celine; Martinez, René S; Lipomi, Darren J

2013-01-01

This paper describes the fabrication of transparent electrodes based on grids of copper microwires using a non-photolithographic process. The process--"abrasion lithography"--takes two forms. In the first implementation (Method I), a water-soluble commodity polymer film is abraded with a sharp tool, coated with a conductive film, and developed by immersion in water. Water dissolves the polymer film and lifts off the conductive film in the unabraded areas. In the second implementation (Method II), the substrate is abraded directly by scratching with a sharp tool (i.e., no polymer film necessary). The abraded regions of the substrate are recessed and roughened. Following deposition of a conductive film, the lower profile and roughened topography in the abraded regions prevents mechanical exfoliation of the conductive film using adhesive tape, and thus the conductive film remains only where the substrate is scratched. As an application, conductive grids exhibit average sheet resistances of 17 Ω sq(-1) and transparencies of 86% are fabricated and used as the anode in organic photovoltaic cells in concert with the conductive polymer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). Compared to devices in which PEDOT:PSS alone serves as an anode, devices comprising grids of copper/nickel microwires and PEDOT:PSS exhibit lowered series resistance, which manifests in greater fill factor and power conversion efficiency. This simple method of forming micropatterns could find use in applications where cost and environmental impact should be minimized, especially as a potential replacement for the transparent electrode indium tin oxide (ITO) in thin-film electronics over large areas (i.e., solar cells) or as a method of rapid prototyping for laboratory-scale devices.

Transport Measurements on NEODYMIUM(1.85) CERIUM(.15) Copper OXYGEN(4-DELTA) Thin Films

NASA Astrophysics Data System (ADS)

Kussmaul, Andreas

1992-01-01

This work describes the synthesis and the study of the transport properties of thin films of Nd _{1.85}Ce_{.15 }CuO_{4-delta} carried out respectively at the IBM T. J. Watson Research Center in collaboration with Dr. A. Gupta, and at the Francis Bitter National Magnet Laboratory under the direction of Dr. P. M. Tedrow. The thin films were prepared by laser ablation of a stoichiometric target on heated substrates in a reactive ambient. The influence of the deposition parameters was studied, and the use of a nitreous oxide ambient was found to yield a clear improvement of the sample quality. The transport properties of the films were measured at low temperatures and in high magnetic fields. Non superconducting samples showed a strong, highly anisotropic, negative magnetoresistance that is consistent with two dimensional weak-localization. Superconducting samples show two dimensional fluctuation effects above T_{c}. The theory of fluctuations in a magnetic field was used to extract the position of H_{c2} (in the perpendicular direction) in the broad and almost featureless resistive transition, and the extracted values were fit to the theory of dirty superconductors. The angular dependence of the resistive transition was studied close to T _{c} and found to be somewhat better described by a two-dimensional model. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.).

Preparation and Characterization of Silanes Films to Protect Electrogalvanized Steel

NASA Astrophysics Data System (ADS)

Seré, Pablo R.; Egli, Walter; Di Sarli, Alejandro R.; Deyá, Cecilia

2018-03-01

Silanes are an interesting alternative to chromate-based surface treatments for temporary protection of electrogalvanized steel. In this work, the protective behavior of 3-mercaptopropyltrimethoxysilane (MTMO), 3-aminopropyltriethoxysilane (AMEO), or 3-glycidoxypropyltrimethoxysilane (GLYMO) films applied on electrogalvanized automotive quality steel sheets has been studied. The silane coating morphology, composition, and porosity were characterized by scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), x-ray fluorescence, immersion in copper sulfate, and cyclic voltammetry. The corrosion protection was evaluated by polarization curves, electrochemical noise measurements, electrochemical impedance spectrometry, and accelerated humidity chamber tests. The results showed that the silanes protect temporarily electrogalvanized steel from corrosion. MTMO forms a relatively thick and cracked film. AMEO and GLYMO films were so thin that they could not be observed by SEM but silicon was detected by EDS. MTMO provided good temporary protection, being an alternative to replace Cr(VI) as protector of electrogalvanized steel.

Synthesis and microstructural studies of annealed Cu(2)O/Cu(x)S bilayer as transparent electrode material for photovoltaic and energy storage devices.

PubMed

Taleatu, B A; Arbab, E A A; Omotoso, E; Mola, G T

2014-10-01

Cu2 O thin film and a transparent bilayer have been fabricated by electrodeposition method. The growths were obtained in potentiostatic mode with gradual degradation of anodic current. X-ray diffraction (XRD) study showed that the bilayer is polycrystalline and it possesses mixture of different crystallite phases of copper oxides. Surface morphology of the films was investigated by scanning electron microscopy (SEM). The SEM images revealed that the films were uniformly distributed and the starting material (Cu2 O) had cubical structure. Grains agglomeration and crystallinity were enhanced by annealing. Optical studies indicated that all the samples have direct allowed transition. Energy band gap of the bilayer film was reduced by annealing treatment thus corroborating quantum confinement upshot. © 2014 The Authors Journal of Microscopy © 2014 Royal Microscopical Society.

Corrosion protection of copper by polypyrrole film studied by electrochemical impedance spectroscopy and the electrochemical quartz microbalance

NASA Astrophysics Data System (ADS)

Lei, Yanhua; Ohtsuka, Toshiaki; Sheng, Nan

2015-12-01

Polypyrrole (PPy) films were synthesized on copper in solution of sodium di-hydrogen phosphate and phytate for corrosion protection. The protection properties of PPy films were comparatively investigated in NaCl solution. During two months immersion, the PPy film doped with phytate anions, working as a cationic perm-selective membrane, inhibited the dissolution of copper to 1% of bare copper. Differently, the PPy film doped with di-hydrogen phosphate anions, possessing anionic perm-selectivity, was gradually reduced, and inhibited the dissolution to 7.8% of bare copper. Degradation of the PPy films was studied by comparing the electrochemical impedance spectroscopy change at different immersion time and Raman spectra change after immersion.

Flower-Like CuO/ZnO Hybrid Hierarchical Nanostructures Grown on Copper Substrate: Glycothermal Synthesis, Characterization, Hydrophobic and Anticorrosion Properties

PubMed Central

Beshkar, Farshad; Khojasteh, Hossein; Salavati-Niasari, Masoud

2017-01-01

In this work we have demonstrated a facile formation of CuO nanostructures on copper substrates by the oxidation of copper foil in ethylene glycol (EG) at 80 °C. On immersing a prepared CuO film into a solution containing 0.1 g Zn(acac)2 in 20 mL EG for 8 h, ZnO flower-like microstructures composed of hierarchical three-dimensional (3D) aggregated nanoparticles and spherical architectures were spontaneously formed at 100 °C. The as-synthesized thin films and 3D microstructures were characterized using XRD, SEM, and EDS techniques. The effects of sodium dodecyl sulphate (SDS), cetyltrimethylammonium bromide (CTAB), and polyethylene glycol (PEG) 6000 as surfactants and stabilizers on the morphology of the CuO and ZnO structures were discussed. Possible growth mechanisms for the controlled organization of primary building units into CuO nanostructures and 3D flower-like ZnO architectures were proposed. The hydrophobic property of the products was characterized by means of water contact angle measurement. After simple surface modification with stearic acid and PDMS, the resulting films showed hydrophobic and even superhydrophobic characteristics due to their special surface energy and nano-microstructure morphology. Importantly, stable superhydrophobicity with a contact angle of 153.5° was successfully observed for CuO-ZnO microflowers after modification with PDMS. The electrochemical impedance measurements proved that the anticorrosion efficiency for the CuO/ZnO/PDMS sample was about 99%. PMID:28773056

Flower-Like CuO/ZnO Hybrid Hierarchical Nanostructures Grown on Copper Substrate: Glycothermal Synthesis, Characterization, Hydrophobic and Anticorrosion Properties.

PubMed

Beshkar, Farshad; Khojasteh, Hossein; Salavati-Niasari, Masoud

2017-06-25

In this work we have demonstrated a facile formation of CuO nanostructures on copper substrates by the oxidation of copper foil in ethylene glycol (EG) at 80 °C. On immersing a prepared CuO film into a solution containing 0.1 g Zn(acac)₂ in 20 mL EG for 8 h, ZnO flower-like microstructures composed of hierarchical three-dimensional (3D) aggregated nanoparticles and spherical architectures were spontaneously formed at 100 °C. The as-synthesized thin films and 3D microstructures were characterized using XRD, SEM, and EDS techniques. The effects of sodium dodecyl sulphate (SDS), cetyltrimethylammonium bromide (CTAB), and polyethylene glycol (PEG) 6000 as surfactants and stabilizers on the morphology of the CuO and ZnO structures were discussed. Possible growth mechanisms for the controlled organization of primary building units into CuO nanostructures and 3D flower-like ZnO architectures were proposed. The hydrophobic property of the products was characterized by means of water contact angle measurement. After simple surface modification with stearic acid and PDMS, the resulting films showed hydrophobic and even superhydrophobic characteristics due to their special surface energy and nano-microstructure morphology. Importantly, stable superhydrophobicity with a contact angle of 153.5° was successfully observed for CuO-ZnO microflowers after modification with PDMS. The electrochemical impedance measurements proved that the anticorrosion efficiency for the CuO/ZnO/PDMS sample was about 99%.

Investigation of the impedance modulation of thin films with a chemically-sensitive field-effect transistor

NASA Astrophysics Data System (ADS)

Wiseman, John M.

1988-12-01

This study resulted in the design and fabrication of a Chemically-Sensitive Field-Effect Transistor (CHEMFET) with an interdigitated gate electrode structure. The electrical performance of the CHEMFET, both in the time-domain and frequency domain, was evaluated for detecting changes in the molecular structure and chemical composition in three thin films: an epoxy, copper phthalocyanine (CuPc), and acetylcholinesterase (ACHE). The change in the chemical state of a film was manifested as a change in the electrical impedance of the interdigitated gate electrode structure. For the epoxy, its molecular structure changed as a result of the curing reaction. To induce a change in the chemical state of the CuPc and ACHE films they were exposed to part-per billion concentrations of a challenge gas, either nitrogen dioxide (NO2) or the the organophosphorus compound, diisopropyl methylphosphonate (DIMP). The results clearly show that the CHEMFET can detect chemical and structural changes in an epoxy and CuPc film. The sensitivity of the ACHE film was not unequivocally determined due to long term drift in the ACHE film's electrical properties. The most remarkable result of this effort was the demonstration of a unique selectivity feature in the CHEMFET's frequency dependent response to a challenge gas. The examination of the relative changes in the electrical properties of the CHEMFET at different frequencies showed that the CHEMFET can be used to distinguish between NO2 and Dimp EXPOSURE.

Laser direct writing of thin-film copper structures as a modification of lithographic processes

NASA Astrophysics Data System (ADS)

Meyer, F.; Ostendorf, A.; Stute, U.

2007-04-01

This paper presents a flexible, mask-free and efficient technique for UV-laser micropatterning of photosensitive resist by laser direct writing (LDW). Photo resist spun on gold sputtered silicon wafers has been laser structured by a scanner guided 266nm DPSSL and electroplated. Ablation behaviour and optimum seed layer preparation in relation to parameters like pulse energy, scanning speed and number of scanned cycles and the electroplating results are discussed. The resulting adhesive strength was measured by a µ-sear device and the gold seed layer-plated copper interface investigated by SEM and EDX to explain correlation to identified bonding behaviour. Improved adhesive strength was observed with higher laser pulse energy and reduced number of cycle.

Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network

NASA Astrophysics Data System (ADS)

Valencia, Daniel; Wilson, Evan; Jiang, Zhengping; Valencia-Zapata, Gustavo A.; Wang, Kuang-Chung; Klimeck, Gerhard; Povolotskyi, Michael

2018-04-01

Orientation effects on the specific resistance of copper grain boundaries are studied systematically with two different atomistic tight-binding methods. A methodology is developed to model the specific resistance of grain boundaries in the ballistic limit using the embedded atom model, tight- binding methods, and nonequilibrium Green's functions. The methodology is validated against first-principles calculations for thin films with a single coincident grain boundary, with 6.4% deviation in the specific resistance. A statistical ensemble of 600 large, random structures with grains is studied. For structures with three grains, it is found that the distribution of specific resistances is close to normal. Finally, a compact model for grain-boundary-specific resistance is constructed based on a neural network.

Deterministic growth of AgTCNQ and CuTCNQ nanowires on large-area reduced graphene oxide films for flexible optoelectronics.

PubMed

Zhang, Shuai; Lu, Zhufeng; Gu, Li; Cai, Liling; Cao, Xuebo

2013-11-22

We describe a synchronous reduction and assembly procedure to directly produce large-area reduced graphene oxide (rGO) films sandwiched by a high density of metal nanoparticles (silver and copper). Further, by using the sandwiched metal NPs as sources, networks consisting of AgTCNQ and CuTCNQ nanowires were deterministically grown from the rGO films, forming structurally and functionally integrated rGO/metal-TCNQ hybrid films with outstanding flexibility, bending endurance, and electrical stability. Interestingly, due to the p-type nature of the rGO film and the n-type nature of the metal-TCNQ NWs, the hybrid films are essentially thin-film p-n junctions which are useful in ubiquitous electronics and optoelectronics. Measurements of the optoelectronic properties demonstrate that the rGO/metal-TCNQ hybrid films exhibit substantial photoconductivity and highly reproducible photoswitching behaviours. The present approach may open the door to the versatile and deterministic integration of functional nanostructures into flexible conducting substrates and provide an important step towards producing low-cost and high-performance soft electronic and optoelectronic devices.

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

DOEpatents

Curtis, Calvin J [Lakewood, CO; Miedaner, Alexander [Boulder, CO; Van Hest, Maikel [Lakewood, CO; Ginley, David S [Evergreen, CO; Nekuda, Jennifer A [Lakewood, CO

2011-11-15

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

The role of amine ligands in governing film morphology and electrical properties of copper films derived from copper formate-based molecular inks.

PubMed

Paquet, Chantal; Lacelle, Thomas; Liu, Xiangyang; Deore, Bhavana; Kell, Arnold J; Lafrenière, Sylvie; Malenfant, Patrick R L

2018-04-19

Copper formate complexes with various primary amines, secondary amines and pyridines were prepared, and their decomposition into conductive films was characterized. A comparison of the various complexes reveals that the temperature of thermolysis depends on the number of hydrogen bonds that can be formed between the amine and formate ligands. The particle size resulting from sintering of the copper complexes is shown to depend on the fraction of amine ligand released during the thermolysis reaction. The particle size in turn is shown to govern the electrical properties of the copper films. Correlations between the properties of the amines, such as boiling point and coordination strength, with the morphology and electrical performance of the copper films were established and provide a basis for the molecular design of copper formate molecular inks.

Direct growth of metal-organic frameworks thin film arrays on glassy carbon electrode based on rapid conversion step mediated by copper clusters and hydroxide nanotubes for fabrication of a high performance non-enzymatic glucose sensing platform.

PubMed

Shahrokhian, Saeed; Khaki Sanati, Elnaz; Hosseini, Hadi

2018-07-30

The direct growth of self-supported metal-organic frameworks (MOFs) thin film can be considered as an effective strategy for fabrication of the advanced modified electrodes in sensors and biosensor applications. However, most of the fabricated MOFs-based sensors suffer from some drawbacks such as time consuming for synthesis of MOF and electrode making, need of a binder or an additive layer, need of expensive equipment and use of hazardous solvents. Here, a novel free-standing MOFs-based modified electrode was fabricated by the rapid direct growth of MOFs on the surface of the glassy carbon electrode (GCE). In this method, direct growth of MOFs was occurred by the formation of vertically aligned arrays of Cu clusters and Cu(OH) 2 nanotubes, which can act as both mediator and positioning fixing factor for the rapid formation of self-supported MOFs on GCE surface. The effect of both chemically and electrochemically formed Cu(OH) 2 nanotubes on the morphological and electrochemical performance of the prepared MOFs were investigated. Due to the unique properties of the prepared MOFs thin film electrode such as uniform and vertically aligned structure, excellent stability, high electroactive surface area, and good availability to analyte and electrolyte diffusion, it was directly used as the electrode material for non-enzymatic electrocatalytic oxidation of glucose. Moreover, the potential utility of this sensing platform for the analytical determination of glucose concentration was evaluated by the amperometry technique. The results proved that the self-supported MOFs thin film on GCE is a promising electrode material for fabricating and designing non-enzymatic glucose sensors. Copyright © 2018 Elsevier B.V. All rights reserved.

Optimization of low cost, non toxic, earth abundant p-type Cu2SnS3 thin film for Photovoltaic application

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Patel, S.; Joshi, U. S.

2016-09-01

Cu2SnS3 (CTS) is one of promising candidate as an absorber material for thin film solar cell. Because of relatively higher prize of Indium and hazardous environmental impact of processing of Gallium, CTS is suitable alternative candidate to Cu2SnS3 (CIGS) based solar cell as its constituent elements such as copper, tin and sulphur are abundantly available in earth's crust. CTS is ternary semiconductor and its energy band gap is 1.5eV, which is perfectly matched with solar energy spectrum for maximum transfer of solar energy into electrical energy through photovoltaic action. The primary methods for the synthesis of CTS are Thermal evaporation, electrochemical, sputtering and wet chemical methods. Here in this paper we have optimized a low cost non-vacuum solution process method for the synthesis of CTS without any external sulfurization. The X-ray diffraction studies showed the formation of phase with the peaks corresponding to (112), (220) and (312) planes. Chemical Solution Deposition (CSD) for the synthesis of CTS is suitable for large area deposition and it includes several routes like solvothermal methods, direct liquid coating and nano ink based technique. The metal Chloride salts and thiourea is used as a source of sulphur to synthesize CTS solution and homogeneous thin films of CTS deposited on glass substrate using spin coating method. Use of abrasive solvent like hydrazine and hydrogen sulphide gas which are used to synthesize CTS thin film have detrimental effect on environment, we report eco friendly solvent based approach to synthesize CTS at low temperature 200 °C.

Solution-processed copper-nickel nanowire anodes for organic solar cells

NASA Astrophysics Data System (ADS)

Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

2014-05-01

This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

Depth distribution of secondary phases in kesterite Cu 2ZnSnS 4 by angle-resolved X-ray absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Just, J.; Lützenkirchen-Hecht, D.; Müller, O.

The depth distribution of secondary phases in the solar cell absorber material Cu 2ZnSnS 4 (CZTS) is quantitatively investigated using X-ray Absorption Near Edge Structure (XANES) analysis at the K-edge of sulfur at varying incidence angles. Varying information depths from several nanometers up to the full thickness is achieved. A quantitative profile of the phase distribution is obtained by a self-consistent fit of a multilayer model to the XANES spectra for different angles. Single step co-evaporated CZTS thin-films are found to exhibit zinc and copper sulfide secondary phases preferentially at the front or back interfaces of the film.

Depth distribution of secondary phases in kesterite Cu 2ZnSnS 4 by angle-resolved X-ray absorption spectroscopy

DOE PAGES

Just, J.; Lützenkirchen-Hecht, D.; Müller, O.; ...

2017-12-12

The depth distribution of secondary phases in the solar cell absorber material Cu 2ZnSnS 4 (CZTS) is quantitatively investigated using X-ray Absorption Near Edge Structure (XANES) analysis at the K-edge of sulfur at varying incidence angles. Varying information depths from several nanometers up to the full thickness is achieved. A quantitative profile of the phase distribution is obtained by a self-consistent fit of a multilayer model to the XANES spectra for different angles. Single step co-evaporated CZTS thin-films are found to exhibit zinc and copper sulfide secondary phases preferentially at the front or back interfaces of the film.

Role of the copper-oxygen defect in cadmium telluride solar cells

NASA Astrophysics Data System (ADS)

Corwine, Caroline R.

Thin-film CdTe is one of the leading materials used in photovoltaic (PV) solar cells. One way to improve device performance and stability is through understanding how various device processing steps alter defect states in the CdTe layer. Photoluminescence (PL) studies can be used to examine radiative defects in materials. This study uses low-temperature PL to probe the defects present in thin-film CdTe deposited for solar cells. One key defect seen in the thin-film CdTe was reproduced in single-crystal (sX) CdTe by systematic incorporation of known impurities in the thin-film growth process, hence demonstrating that both copper and oxygen were necessary for its formation. Polycrystalline (pX) thin-film glass/SnO2:F/CdS/CdTe structures were examined. The CdTe layer was grown via close-spaced sublimation (CSS), vapor transport deposition (VTD), and physical vapor deposition (PVD). After CdTe deposition, followed by a standard CdC12 treatment and a ZnTe:Cu back contact, a PL peak was seen at ˜1.46 eV from the free back surface of all samples (1.456 eV for CSS and PVD, 1.460-1.463 eV for VTD). However, before the Cu-containing contact was added, this peak was not seen from the front of the CdTe (the CdS/CdTe junction region) in any device with CdTe thickness greater than 4 mum. The CdCl2 treatment commonly used to increase CdTe grain size did not enhance or reduce the peak at ˜1.46 eV relative to the rest of the PL spectrum. When the Cu-containing contact was applied, the PL spectra from both the front and back of the CdTe exhibited the peak at 1.456 eV. The PL peak at ˜1.46 eV was present in thin-film CdTe after deposition, when the dominant impurities are expected to be both Cu from the CdTe source material and O introduced in the chamber during growth to assist in CdTe film density. Since Cu and/or O appeared to be involved in this defect, PL studies were done with sX CdTe to distinguish between the separate effects of Cu or O and the combined effect of Cu and O. Photoluminescence on the sX samples revealed a unique transition at 1.456 eV, identical to the one seen in CSS thin-film CdTe, only when both Cu and O were introduced simultaneously. Theoretical calculations indicate that this PL line is likely a transition between the valence band and a Cui-OTe donor complex 150 meV below the conduction band. Formation of a Cui-OT, donor complex was expected to limit the performance of the CdS/CdTe solar cell. However, this was difficult to observe in the prepared devices, likely because other beneficial processes occurred simultaneously, such as formation of CUCd acceptors in the CdTe layer and improvement in the quality of the back contact by including Cu. It was possible to see the theoretical effects of this defect using AMPS--1D numerical simulations. The simulated J-V curves indicated that a donor level 150 meV from the conduction band would reduce the Voc, hence reducing the overall device efficiency. Therefore, despite the lack of direct experimental evidence, it is very plausible that the CU i-OTe defect observed with photoluminescence may serve to limit the possible attainable efficiency in CdS/CdTe solar cells.

Fracture characterization of inhomogeneous wrinkled metallic films deposited on soft substrates

NASA Astrophysics Data System (ADS)

Kishida, Hiroshi; Ishizaka, Satoshi; Nagakura, Takumi; Suzuki, Hiroaki; Yonezu, Akio

2017-12-01

This study investigated the fracture properties of wrinkled metallic films on a polydimethylsiloxane (PDMS) soft substrate. In particular, the crack density of the wrinkled film during tensile deformation was examined. In order to achieve better deformability of metallic thin films, a method to fabricate a wrinkled thin film on a PDMS soft substrate was first established. The copper (Cu) nano-film fabricated in this study possessed a wrinkled geometry, which plays a critical role in determining the extent of large elastic deformation. To create the wrinkled structure, wet-etching with a polymeric sacrificial layer was used. A sacrificial layer was first deposited onto a silicone rubber sheet. During the curing process of the layer, a compressive strain was applied such that the hardened surface layer buckled, and a wrinkled form was obtained. Subsequently, a PDMS solution was used to cover the layer in order to form a wrinkled PDMS substrate. Finally, the Cu film was deposited onto the wrinkled PDMS, such that the wrinkled Cu film on a soft PDMS substrate was fabricated. The use of uni-axial tensile tests resulted in film crack generation at the stress concentration zone in the wrinkled structure of the films. When the tensile loading was increased, the number of cracks increased. It was found that the increase in crack density was strongly related to the inhomogeneous nature of the wrinkled structure. Such a trend in crack density was investigated using FEM (finite element method) computations, such that this study established a simple mechanical model that may be used to predict the increase in crack density during tensile deformation. This model was verified through several experiments using various wrinkle patterns. The proposed mechanical model may be useful to predict the crack density of a wrinkled metallic film subject to tensile loading.

Microhardness variation and related microstructure in Al-Cu alloys prepared by HF induction melting and RF sputtering

NASA Astrophysics Data System (ADS)

Boukhris, N.; Lallouche, S.; Debili, M. Y.; Draissia, M.

2009-03-01

The materials under consideration are binary aluminium-copper alloys (10 at% to 90.3 at%Cu) produced by HF melting and RF magnetron sputtering. The resulting micro structures have been observed by standard metallographic techniques, X-ray powder diffraction, scanning electron microscopy and transmission electron microscopy. Vickers microhardness of bulk Al-Cu alloys reaches a maximum of 1800 MPa at 70.16 at%Cu. An unexpected metastable θ ' phase has been observed within aluminium grain in Al-37 at%Cu. The mechanical properties of a family of homogeneous Al{1-x}Cu{x} (0 < x < 0.92) thin films made by radiofrequency (13.56 MHz) cathodic magnetron sputtering from composite Al-Cu targets have been investigated. The as-deposited microstructures for all film compositions consisted of a mixture of the two expected face-centred-cubic (fcc) Al solid solution and tetragonal θ (Al{2}Cu) phases. The microhardness regularly increases and the grain size decreases both with copper concentration. This phenomenon of significant mechanical strengthening of aluminium by means of copper is essentially due to a combination between solid solution effects and grain size refinement. This paper reports some structural features of different Al-Cu alloys prepared by HF melting and RF magnetron on glass substrate sputtering.

Effect of deposition rate on melting point of copper film catalyst substrate at atomic scale

NASA Astrophysics Data System (ADS)

Marimpul, Rinaldo; Syuhada, Ibnu; Rosikhin, Ahmad; Winata, Toto

2018-03-01

Annealing process of copper film catalyst substrate was studied by molcular dynamics simulation. This copper film catalyst substrate was produced using thermal evaporation method. The annealing process was limited in nanosecond order to observe the mechanism at atomic scale. We found that deposition rate parameter affected the melting point of catalyst substrate. The change of crystalline structure of copper atoms was observed before it had been already at melting point. The optimum annealing temperature was obtained to get the highest percentage of fcc structure on copper film catalyst substrate.

Influence of Cu, Au and Ag on structural and surface properties of bioactive coatings based on titanium.

PubMed

Wojcieszak, D; Mazur, M; Kalisz, M; Grobelny, M

2017-02-01

In this work influence of copper, silver and gold additives on structural and surface properties of biologically active thin films based on titanium have been described. Coatings were prepared by magnetron sputtering method. During each process metallic discs (targets) - Ti and the additive (Cu, Ag or Au) were co-sputtered in argon atmosphere. Structural investigation of as-deposited coatings was performed with the aid of XRD and SEM/EDS method. It was found that all prepared thin films were homogenous. Addition of Cu, Ag and Au resulted in nanocrystalline structure. Moreover, influence of these additives on hardness and antibacterial activity of titanium coatings was also studied. Ti-Cu, Ti-Ag and Ti-Au films had lower hardness as-compared to Ti. According to AAS results the difference of their activity was related to the ion migration process. It was found that Ti-Ag and Ti-Au coatings had biocidal effect related to direct contact of their surface with microorganisms. In the case of Ti-Cu antimicrobial activity had direct and indirect nature due to efficient ion migration process from the film surface to the surrounding environment. Functional features of coatings such as wettability and corrosion resistance were also examined and included in the comprehensive analysis. Copyright © 2016 Elsevier B.V. All rights reserved.

Summary Report of the Summer Conference DARPA-Materials Research Council Held in La Jolla, California on 10 July thru 4 August 1989

DTIC Science & Technology

1989-08-04

ceramic substrate and a multilayer thin film metal (copper) and polymer ( polyimide ) overlays. 73 The MCM technology was pioneered by IBM, which has made...packaging. The first is the use of polymeric dielectric layers such as polyimides . In fact, the current MCP’s 3 being developed for the DoD use... polyimide dielectrics. Nonetheless, much work remains to be done before these organic dielectrics can be regarded as Isatisfactory. Polyimides have a

Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

PubMed Central

Avila, José; Razado, Ivy; Lorcy, Stéphane; Fleurier, Romain; Pichonat, Emmanuelle; Vignaud, Dominique; Wallart, Xavier; Asensio, María C.

2013-01-01

The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES. PMID:23942471

Frontier molecular orbitals of a single molecule adsorbed on thin insulating films supported by a metal substrate: electron and hole attachment energies.

PubMed

Scivetti, Iván; Persson, Mats

2017-09-06

We present calculations of vertical electron and hole attachment energies to the frontier orbitals of a pentacene molecule absorbed on multi-layer sodium chloride films supported by a copper substrate using a simplified density functional theory (DFT) method. The adsorbate and the film are treated fully within DFT, whereas the metal is treated implicitly by a perfect conductor model. We find that the computed energy gap between the highest and lowest unoccupied molecular orbitals-HOMO and LUMO -from the vertical attachment energies increases with the thickness of the insulating film, in agreement with experiments. This increase of the gap can be rationalised in a simple dielectric model with parameters determined from DFT calculations and is found to be dominated by the image interaction with the metal. We find, however, that this simplified model overestimates the downward shift of the energy gap in the limit of an infinitely thick film.

Highly efficient non-biofouling coating of zwitterionic polymers: poly((3-(methacryloylamino)propyl)-dimethyl(3-sulfopropyl)ammonium hydroxide).

PubMed

Cho, Woo Kyung; Kong, Bokyung; Choi, Insung S

2007-05-08

This work describes the formation of highly efficient non-biofouling polymeric thin films of poly((3-(methacryloylamino)propyl)-dimethyl(3-sulfopropyl)ammonium hydroxide), (poly(MPDSAH)). The poly(MPDSAH) films were generated from the self-assembled monolayers terminating in an initiator of atom transfer radical polymerization (ATRP) by the surface-initiated ATRP of MPDSAH. The poly(MPDSAH) films on a gold surface were characterized by ellipsometry, FT-IR spectroscopy, contact angle goniometery, and X-ray photoelectron spectroscopy. The copper complexes and unpolymerized monomers trapped inside the polymer brushes were completely washed out by soaking the poly(MPDSAH)-coated substrate in water at 40 degrees C for 4 days. The amount of proteins nonspecifically adsorbed onto the poly(MPDSAH) films was evaluated by surface plasmon resonance spectroscopy: the adsorption of proteins was <0.6 ng/cm(2) on the surfaces for all the model proteins. The ability of the poly(MPDSAH) films to resist the nonspecific adsorption of proteins was comparable to that of the best known systems.

Laser patterning of diamond films

NASA Astrophysics Data System (ADS)

Narayan, J.; Chen, X.

1992-04-01

Selective deposition and fine-scale patterning of hot filament deposited diamond films by the use of pulsed laser irradiation on silicon and copper substrates are reported. The substrates were abraded with diamond and alumina powders before hot-filament chemical vapor deposition. A drastic enhancement in diamond nucleation (using hot-filament chemical vapor deposition) was observed on specimens treated with diamond powder, whereas enhancement on specimens pretreated with alumina powder was relatively insignificant. It is found that the seeding of diamond crystals was substantially reduced by pulsed laser annealing/melting which removes the plastic damage as well as the seed crystals introduced by diamond powder pretreatment. The selective deposition or fine-scale patterning of diamond films was achieved either by a shadow masking or by scanning a focused laser beam to generate desired patterns. The nucleation can also be enhanced by laser deposition of thin films, such as diamond-like carbon and tungsten carbide (WC), and selective deposition and patterning achieved by controlled removal or deposition of the above films.