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Sample records for crossed-field diode sputtering

  1. Thin film deposition by electric and magnetic crossed-field diode sputtering

    DOEpatents

    Welch, Kimo M.

    1977-01-01

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  2. Thin film deposition by electric and magnetic crossed-field diode sputtering. [Patent application

    DOEpatents

    Welch, K.M.

    1975-04-04

    Applying a coating of titanium nitride to a klystron window by means of a cross-field diode sputtering array is described. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent to a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate, and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thickness. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multifactoring under operating conditions of the components.

  3. Thin film deposition by electric and magnetic crossed-field diode sputtering

    DOEpatents

    Welch, Kimo M.

    1980-01-01

    Applying a thin film coating to the surface of a workpiece, in particular, applying a coating of titanium nitride to a klystron window by means of a crossed-field diode sputtering array. The array is comprised of a cohesive group of numerous small hollow electrically conducting cylinders and is mounted so that the open ends of the cylinders on one side of the group are adjacent a titanium cathode plate. The workpiece is mounted so as to face the open ends of the other side of the group. A magnetic field is applied to the array so as to be coaxial with the cylinders and a potential is applied across the cylinders and the cathode plate, the cylinders as an anode being positive with respect to the cathode plate. The cylinders, the cathode plate and the workpiece are situated in an atmosphere of nitrogen which becomes ionized such as by field emission because of the electric field between the cylinders and cathode plate, thereby establishing an anode-cathode discharge that results in sputtering of the titanium plate. The sputtered titanium coats the workpiece and chemically combines with the nitrogen to form a titanium nitride coating on the workpiece. Gas pressure, gas mixtures, cathode material composition, voltages applied to the cathode and anode, the magnetic field, cathode, anode and workpiece spacing, and the aspect ratio (ratio of length to inner diameter) of the anode cylinders, all may be controlled to provide consistent optimum thin film coatings of various compositions and thicknesses. Another facet of the disclosure is the coating of microwave components per se with titanium nitride to reduce multipactoring under operating conditions of the components.

  4. Role of ions in a crossed-field diode.

    PubMed

    Lau, Y Y; Luginsland, J W; Cartwright, K L; Haworth, M D

    2007-01-05

    The effect of ions in a magnetically insulated crossed-field gap is studied using a single particle orbit model, shear flow model, and particle-in-cell simulation. It is found that, in general, the presence of ions in a crossed-field gap always increases the electrons' excursion toward the anode region, regardless of the location of the ions. Thus, the rate at which the electrons migrate toward the anode, which is a measure of the diode closure rate, is related to the rate at which ions are introduced into the crossed-field gap. This anode migration of electrons is unrelated to crossed-field ambipolar diffusion. The implications of these findings are explored, such as pulse shortening in relativistic magnetrons and bipolar flows in pulsed-power systems.

  5. Role of Ions in a Crossed-Field Diode

    SciTech Connect

    Lau, Y. Y.; Luginsland, J. W.; Cartwright, K. L.; Haworth, M. D.

    2007-01-05

    The effect of ions in a magnetically insulated crossed-field gap is studied using a single particle orbit model, shear flow model, and particle-in-cell simulation. It is found that, in general, the presence of ions in a crossed-field gap always increases the electrons' excursion toward the anode region, regardless of the location of the ions. Thus, the rate at which the electrons migrate toward the anode, which is a measure of the diode closure rate, is related to the rate at which ions are introduced into the crossed-field gap. This anode migration of electrons is unrelated to crossed-field ambipolar diffusion. The implications of these findings are explored, such as pulse shortening in relativistic magnetrons and bipolar flows in pulsed-power systems.

  6. Measurement and interpretation of current transmission in a crossed-field diode below cutoff

    SciTech Connect

    Vanderberg, B.H.; Eninger, J.E.

    1997-02-01

    Measurements on the current-voltage-magnetic field characteristics of a space-charge-limited cylindrical cross-field diode below cutoff are presented. The measured current is found to be lower than predicted by simple cold-fluid theory. This reduction combined with observed oscillations in the current can be explained by secondary electron emission from the anode, leading to an increase of space charge in the diode. {copyright} {ital 1997 American Institute of Physics.}

  7. Measurement and interpretation of current transmission in a crossed-field diode below cutoff

    NASA Astrophysics Data System (ADS)

    Vanderberg, Bo H.; Eninger, Jan E.

    1997-02-01

    Measurements on the current-voltage-magnetic field characteristics of a space-charge-limited cylindrical cross-field diode below cutoff are presented. The measured current is found to be lower than predicted by simple cold-fluid theory. This reduction combined with observed oscillations in the current can be explained by secondary electron emission from the anode, leading to an increase of space charge in the diode.

  8. Modeling the effects of anode secondary electron emission on transmitted current in crossed-field diodes

    NASA Astrophysics Data System (ADS)

    Gopinath, Venkatesh; Vanderberg, Bo

    1996-11-01

    Recent experimental measurements of transmitted current in a crossed-field switch by Vanderberg and Eninger ( B. H. Vanderberg and J. E. Eninger, ``Space-charge limited current cut-off in crossed fields,'' presented at IEEE ICOPS'95, Madison, Wi. ) have shown that the measured values of transmitted current are significantly smaller than the theoretically predicted limit. The experiments also showed larger decrease in transmitted current for higher magnetic fields, implying an effect due to the higher angle of incidence of incident electrons (i.e., at values of B closer to B_H). Studies by Verboncoeur and Birdsall ( J. P. Verboncoeur and C. K. Birdsall. ``Rapid current transition in a crossed-field diode,'' Phys. Plasmas 3) 3, March 1996. have shown that even small amount ( < 1%) of over injection in a crossed-field diode near cut-off led to substantial decrease in transmitted current. In our current work, we show that the same effect can be triggered by the presence of secondary electron emission from the anode. This study models the dependence of emission upon incident electron angle and energy. Since the yield of secondary electrons increases with incident angle, this model follows the experimental results as B approaches B_Hull accurately. This work was supported in part by ONR under grant FD-N00014-90-J-1198

  9. The Effect of Secondary Emission Cathode Parameters on (Near-) Brillouin Flow in Crossed-Field Diodes

    NASA Astrophysics Data System (ADS)

    Fichtl, Christopher

    2005-10-01

    The initial velocity that an electron has from the cathode can change the magnetic field needed to insulate a crossed-field diode. For a secondary emitting cathode the distribution of emitted electron velocities depends on the velocity distribution of electrons returning to the cathode. We have studied the evolution of the Brillouin hub in a crossed-field diode in self-consistent 1d electromagnetic Particle-in-Cell (PIC) code with thermal emission and a secondary emission model by Vaughan. The baseline simulations have thermal emission with 0.1 eV of temperature; this is compared to simulations that have both secondary emission and thermal emission. The fraction of reflected and back scattered primaries is varied to induce perturbations in the Brillouin hub. The temperature of the true secondaries is conveniently set to the thermal emission temperature of 0.1 eV. It is found that relatively few (˜10%) reflected and back scattered primaries allow the Brillouin hub to expand further across the diode as compared to the thermal emission cathode.

  10. Electrical characterization of Mo/n-GaAs/In Schottky diodes fabricated by rf sputtering

    SciTech Connect

    Singh, A.; Velasquez, L.

    1996-07-01

    Mo Schottky contacts to n-GaAs were fabricated by deposition of Mo on the front side of (100) n-GaAs by rf sputtering, using an rf power of 200 watts with argon pressure of 6.5{times}10{sup {minus}3} Torr. Back ohmic contacts to n-GaAs were prepared by Sputter deposition of In using an rf power of 50 watts, followed by a 3.5 hour anneal in Ar atmosphere at 390{degree}C. The forward I{endash}V characteristics for the Mo/n-GaAs/In Schottky diode were non ideal over the temperature range 160{endash}350 K. The analysis of the forward I{endash}V/T data indicated that the forward current transport was controlled largely by generation-recombination (GR) in the depletion region and to a lesser extent by thermionic emission (TE) over the temperature range 260{endash}350 K. From the temperature variation of the TE reverse saturation current, the values of (1.04{plus_minus}0.02) V and (2.1{plus_minus}0.5){times}10{sup 6} Acm{sup {minus}2}K{sup {minus}2} for the zero bias zero temperature barrier height ({phi}{sub 0}) and the effective Richardson constant ({ital A}{sub eff}), respectively, were obtained. A value of ({minus}1.1{plus_minus}0.1) mV/K for the temperature coefficient ({beta}) of the barrier height was required to justify such a high value for {ital A}{sub eff}. A similar value of {beta} is supported by our C-V data in the same Mo/n-GaAs/In Schottky diode. {copyright} {ital 1996 American Institute of Physics.}

  11. Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

    SciTech Connect

    Kim, Han-Ki; Kim, D.-G.; Lee, K.-S.; Huh, M.-S.; Jeong, S.H.; Kim, K.I.; Seong, Tae-Yeon

    2005-05-02

    We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2x10{sup -5} mA/cm{sup 2}) at reverse bias of -6 V as compared to that (1x10{sup -1}-10{sup -2} mA/cm{sup 2} at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.

  12. Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering.

    PubMed

    Shon, Jeong Woo; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Fujioka, Hiroshi

    2014-06-23

    InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorganic vapor phase epitaxy on single-crystal wafers. If we can utilize a low-cost epitaxial growth process, such as sputtering on large-area substrates, we can fabricate large-area InGaN light-emitting displays. Here, we report the growth of GaN (0001) and InGaN (0001) films on amorphous SiO2 by pulsed sputtering deposition. We found that using multilayer graphene buffer layers allows the growth of highly c-axis-oriented GaN films even on amorphous substrates. We fabricated red, green, and blue InGaN LEDs and confirmed their successful operation. This successful fabrication of full-color InGaN LEDs on amorphous substrates by sputtering indicates that the technique is quite promising for future large-area light-emitting displays on amorphous substrates.

  13. Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

    NASA Astrophysics Data System (ADS)

    Chiu, C. H.; Lin, Y. W.; Tsai, M. T.; Lin, B. C.; Li, Z. Y.; Tu, P. M.; Huang, S. C.; Hsu, Earl; Uen, W. Y.; Lee, W. I.; Kuo, H. C.

    2015-03-01

    In this work, the ultraviolet light-emitting diodes (UV-LEDs) at 380 nm were grown on patterned sapphire substrate (PSS) by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD). A sputtered AlN nucleation layer was utilized on the PSS to enhance the quality of the epitaxial layer. By using high-resolution X-ray diffraction, the full-width at half-maximum of the rocking curve shows that the UV-LEDs with sputtered AlN nucleation layer had better crystalline quality when compared to conventional GaN nucleation samples. From the scanning electron microscope (SEM) and transmission electron microscopy (TEM) images, it can be observed that the tip and sidewall portion of the pattern was smooth using the sputtered AlN nucleation layer. The threading dislocation densities (TDDs) are reduced from 6×107 cm-2 to 2.5×107 cm-2 at the interface between the u-GaN layers for conventional and AlN PSS devices, respectively. As a result, a much higher light output power was achieved. The light output power at an injection current of 20 mA was enhanced by 30%. Further photoluminescence (PL) measurement and numerical simulation confirm that this increase of output power can be attributed to the improvement of material quality and light extraction.

  14. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Li, Heng; Lu, Tien-Chang

    2016-04-01

    The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  15. Characterization of energetic and thermalized sputtered atoms in pulsed plasma using time-resolved tunable diode-laser induced fluorescence

    SciTech Connect

    Desecures, M.; Poucques, L. de; Easwarakhanthan, T.; Bougdira, J.

    2014-11-03

    In this work, a time-resolved tunable diode-laser (DL) induced fluorescence (TR-TDLIF) method calibrated by absorption spectroscopy has been developed in order to determine atom and flux velocity distribution functions (AVDF and FVDF) of the energetic and the thermalized atoms in pulsed plasmas. The experimental set-up includes a low-frequency (∼3 Hz) and high spectral-resolution DL (∼0.005 pm), a fast rise-time pulse generator, and a high power impulse magnetron sputtering (HiPIMS) system. The induced TR-TDLIF signal is recorded every 0.5 μs with a digital oscilloscope of a second-long trace. The technique is illustrated with determining the AVDF and the FVDF of a metastable state of the sputtered neutral tungsten atoms in the HiPIMS post-discharge. Gaussian functions describing the population of the four W isotopes were used to fit the measured TR-TDLIF signal. These distribution functions provide insight into transition from the energetic to thermalized regimes from the discharge onset. This technique may be extended with appropriate DLs to probe any species with rapidly changing AVDF and FVDF in pulsed and strongly oscillating plasmas.

  16. Transparent indium zinc oxide top cathode prepared by plasma damage-free sputtering for top-emitting organic light-emitting diodes

    SciTech Connect

    Kim, Han-Ki; Lee, Kyu-Sung; Kwon, J.H.

    2006-01-02

    We report on plasma damage-free sputtering of an indium zinc oxide (IZO) top cathode layer for top-emitting organic light-emitting diodes (TOLEDs) by using a box cathode sputtering (BCS) technique. A sheet resistance of 42.6 {omega}/cm and average transmittance above 88% in visible range were obtained even in IZO layers deposited by BCS at room temperature. The TOLED with the IZO top cathode layer shows electrical characteristics and lifetime comparable to a TOLED with only thermally evaporated Mg-Ag cathode. In particular, it is shown that the TOLED with the IZO top cathode film shows very low leakage current density of 1x10{sup -5} mA cm{sup 2} at reverse bias of -6 V. This suggests that there is no plasma damage caused by the bombardment of energetic particles during IZO sputtering using the BCS system.

  17. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    PubMed Central

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-01-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

  18. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  19. Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

    NASA Astrophysics Data System (ADS)

    Singh, Satyendra Kumar; Hazra, Purnima

    2017-04-01

    In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300-433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si<100> substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300-800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier height are found to increase, whereas ideality factor is started decreasing. This phenomenon confirms that barrier inhomogeneities are present at the interface of ZnO/Si heterojunction, as a result of lattice constant and thermal coefficient mismatch between Si and ZnO. Therefore, a modified value of Richardson constant [33.06 Acm-2K-2] has been extracted from the temperature-dependent electrical characteristics after assuming the Gaussian distribution of special barrier height inhomogeneities

  20. Improvement in luminance efficiency of organic light emitting diodes by suppression of secondary electron bombardment of substrate during sputter deposition of top electrode films

    NASA Astrophysics Data System (ADS)

    Hamaguchi, Daichi; Kobayashi, Shin-ichi; Uchida, Takayuki; Sawada, Yutaka; Lei, Hao; Hoshi, Yoichi

    2016-10-01

    In this study, we investigated the degradation mechanisms of the luminance performance of organic light-emitting diodes (OLEDs) when their top electrode films were deposited by sputter deposition process. During the sputter deposition of the top electrode films, the suppression of the incidence of high-energy electrons on the substrate was attempted using various methods. As a result, we found that during electrode deposition, the incidence of the high-energy secondary electrons, which were emitted from the target surface, on the substrate was the main cause of the significant degradation of the luminance performance. It was also found that the application of a magnetic field by setting permanent magnets near the substrate holder and the insertion of a shield plate near the target cathode were effective in suppressing the incidence of secondary electrons on the substrate.

  1. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    NASA Astrophysics Data System (ADS)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  2. p-Cu2O/SiO x /n-SiC/n-Si memory diode fabricated with room-temperature-sputtered n-SiC and SiO x

    NASA Astrophysics Data System (ADS)

    Yamashita, Atsushi; Tsukamoto, Takahiro; Suda, Yoshiyuki

    2016-12-01

    We investigated low-temperature fabrication processes for our previously proposed pn memory diode with a p-Cu2O/SiC x O y /n-SiC/n-Si structure having resistive nonvolatile memory and rectifying behaviors suitable for a cross-point memory array with the highest theoretical density. In previous fabrication processes, n-SiC was formed by sputtering at 1113 K, and SiC x O y and p-Cu2O were formed by the thermal oxidation of n-SiC and Cu at 1073 and 473 K, respectively. In this study, we propose a pn memory diode with a p-Cu2O/SiO x /n-SiC/n-Si structure, where n-SiC and SiO x layers are deposited by sputtering at room temperature. The proposed processes enable the fabrication of the pn memory diode at temperatures of not more than 473 K, which is used for the formation of p-Cu2O. This memory diode exhibits good nonvolatile memory and rectifying characteristics. These proposed low-temperature fabrication processes are expected to expand the range of fabrication processes applicable to current LSI fabrication processes.

  3. Numerical simulation of cross field amplifiers

    SciTech Connect

    Eppley, K.

    1990-01-01

    Cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. One feature distinguishing cross field amplifiers is that the operating current is produced by secondary emission from a cold cathode. This removes the need for a heater and enables the device to act as a switch tube, drawing no power until the rf drive is applied. However, this method of generating the current does complicate the simulation. We are developing a simulation model of cross field amplifiers using the PIC code CONDOR. We simulate an interaction region, one traveling wavelength long, with periodic boundary conditions. An electric field with the appropriate phase velocity is imposed on the upper boundary of the problem. Evaluation of the integral of E{center dot}J gives the power interchanged between the wave and the beam. Given the impedance of the structure, we then calculate the change in the traveling wave field. Thus we simulate the growth of the wave through the device. The main advance of our model over previous CFA simulations is the realistic tracking of absorption and secondary emission. The code uses experimental curves to calculate secondary production as a function of absorbed energy, with a theoretical expression for the angular dependence. We have used this code to model the 100 MW X-band CFA under construction at SLAC, as designed by Joseph Feinstein and Terry Lee. We are examining several questions of practical interest, such as the power and spectrum of absorbed electrons, the minimum traveling wave field needed to initiate spoke formation, and the variation of output power with dc voltage, anode-cathode gap, and magnetic field. 5 refs., 8 figs.

  4. A kinetic cross-field streaming instability

    NASA Technical Reports Server (NTRS)

    Wu, C. S.; Winske, D.; Papadopoulos, K.; Zhou, Y. M.; Tsai, S. T.; Guo, S. C.

    1983-01-01

    In a high-beta plasma the so-called modified-two-stream instability, which results from strongly magnetized electrons drifting relative to unmagnetized ions across a homogeneous magnetic field, is misnamed because the mode is highly kinetic, particularly when the relative streaming velocity exceeds the Alfven speed of the plasma. This kinetic cross-field streaming instability is investigated in detail, examining the effect of the electromagnetic terms and the stability boundaries in both low- and high-beta plasmas. An approximate dispersion relation showing the relation of this mode to the whistler is derived and solutions of it are compared with those obtained from the exact dispersion relation. The kinetic mode, unlike the usual modified-two-stream instability, is not stabilized by electromagnetic effects when the relative electron-ion drift speed exceeds the Alfven speed.

  5. Demagnetisation by crossed fields in superconductors

    NASA Astrophysics Data System (ADS)

    Campbell, Archie; Baghdadi, Mehdi; Patel, Anup; Zhou, Difan; Huang, K. Y.; Shi, Yunhua; Coombs, Tim

    2017-03-01

    A study has been made of the decay of the trapped magnetisation in superconductors when exposed to a crossed field. Numerical results have been compared with the theory of Brandt and Mikitik (2002 Phys. Rev. Lett. 89 027002) which solves the problem for a thin strip superconductor. FlexPDE with the A formulation and COMSOL with the H formulation were both used. Simulations of a strip with a cross section aspect ratio of 20 showed good agreement with theory both for the case of a transverse field larger than the transverse penetration field and for one smaller. In the latter case the magnetisation saturates as predicted, however the simulations show a slow decay after many cycles. In the case of stacked YBCO tapes the movement of flux lines is very small and the effects of the reversible motion were investigated. This can decrease the decay initially for very thin decoupled tapes, but cause a steady decay after very large numbers of cycles. Simulations on stacked strips showed that the decay constant increased approximately linearly with the number of strips. When combined with the theory for one tape this can explain the very slow decay observed in previous experiments. Experimental results were qualitatively in agreement with theory and simulations but showed some discrepancies. However there are a number of differences between the experimental situation and theory so good agreement is not expected.

  6. Sputter target

    DOEpatents

    Gates, Willard G.; Hale, Gerald J.

    1980-01-01

    The disclosure relates to an improved sputter target for use in the deposition of hard coatings. An exemplary target is given wherein titanium diboride is brazed to a tantalum backing plate using a gold-palladium-nickel braze alloy.

  7. Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

    NASA Astrophysics Data System (ADS)

    Chichibu, Shigefusa F.; Ohmori, Takuya; Shibata, Naoyuki; Koyama, Takahiro; Onuma, Takeyoshi

    2005-11-01

    Greenish-white electroluminescence (EL) was observed from the heterojunction light-emitting diodes (LEDs) composed of p-type (001) CuGaS2 chalcopyrite semiconductor epilayers and preferentially (0001)-oriented polycrystalline n-type ZnO thin films. The CuGaS2 layers were grown on a (001) GaP substrate by metalorganic vapor phase epitaxy and the ZnO films were deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The n-ZnO/p-CuGaS2 LED structure was designed to enable an electron injection from the n-type wider band gap material forming a TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although their higher energy portions were absorbed by the GaP substrate. Since the spectral lineshape resembled that of the photoluminescence from identical CuGaS2 epilayers, the EL was assigned to originate from p-CuGaS2.

  8. What is control of turbulence in crossed fields?

    NASA Astrophysics Data System (ADS)

    Volchenkov, Dimitri

    2010-02-01

    Convective instability in the cross-field system of thermonuclear reactors can be overridden by poloidal drifts. While in crossed fields, a long-time, large-scale turbulent regime, in which the eddies of some particular size are destined to persist longer than usual, would come into being. Perhaps, we may keep such vortexes using them as tools for maintaining the stability of still an illusory construct of plasma fusion.

  9. Sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    1972-01-01

    The proceedings of a conference on sputtering and ion plating are presented. Subjects discussed are: (1) concepts and applications of ion plating, (2) sputtering for deposition of solid film lubricants, (3) commercial ion plating equipment, (4) industrial potential for ion plating and sputtering, and (5) fundamentals of RF and DC sputtering.

  10. Magnetron sputtering source

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.; Grabner, R.F.; Ramsey, P.B.

    1994-08-02

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

  11. Magnetron sputtering source

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.; Grabner, R. Fred; Ramsey, Philip B.

    1994-01-01

    A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal.

  12. Cathode driven high gain crossed-field amplifier

    NASA Astrophysics Data System (ADS)

    1983-07-01

    The objective of this three-phase program is to achieve the design of a cathode driven high gain re-entrant Crossed Field Amplifier capable of meeting the parameters of Raytheon Company specification No. 968838 dated 10 May 1978. The effort includes the fabrication and test of three developmental and four final configuration tubes. One final configuration tube will be life tested and two will be delivered to the Navy. The tasks discussed during this report period relate to the cold tests performed on various subassemblies of model no. 4 and on the sealed-in model no. 4 of the S-band high gain cathode driven crossed field amplifier. Based on the performance of model no. 3 certain remedial measures have been implemented in model no. 4 that have resulted in the elimination of key resonances within the tube and an improvement in the isolation between the cathode and anode circuits.

  13. Kr II and Xe II axial velocity distribution functions in a cross-field ion source

    NASA Astrophysics Data System (ADS)

    Lejeune, A.; Bourgeois, G.; Mazouffre, S.

    2012-07-01

    Laser induced fluorescence measurements were carried out in a cross-field ion source to examine the behaviour of the axial ion velocity distribution functions (VDFs) in the expanding plasma. In the present paper, we focus on the axial VDFs of Kr II and Xe II ions. We examine the contourplots in a 1D-phase space (x,vx) representation in front of the exhaust channel and along the centerline of the ion source. The main ion beam, whose momentum corresponds to the ions that are accelerated through the whole potential drop, is observed. A secondary structure reveals the ions coming from the opposite side of the channel. We show that the formation of the neutralized ion flow is governed by the annular geometry. The assumption of a collisionless shock or a double layer due to supersonic beam interaction is not necessary. A non-negligible fraction of slow ions originates in local ionization or charge-exchange collision events between ions of the expanding plasma and atoms of the background residual gas. Slow ions that are produced near the centerline in the vicinity of the exit plane are accelerated toward the source body with a negative velocity leading to a high sputtering of front face. On the contrary, the ions that are produced in the vicinity of the channel exit plane are partially accelerated by the extended electric field.

  14. Multitarget sequential sputtering apparatus

    NASA Technical Reports Server (NTRS)

    Shima, R. (Inventor)

    1975-01-01

    The development and characteristics of a sputtering apparatus are discussed. A potential difference is applied between the cathode and anode to produce a plasma for each target which is sputtered by accelerated ions within the plasma. The process of sputtering for various materials is described. Diagrams of the unit are provided.

  15. Crossed-field divertor for a plasma device

    DOEpatents

    Kerst, Donald W.; Strait, Edward J.

    1981-01-01

    A divertor for removal of unwanted materials from the interior of a magnetic plasma confinement device includes the division of the wall of the device into segments insulated from each other in order to apply an electric field having a component perpendicular to the confining magnetic field. The resulting crossed-field drift causes electrically charged particles to be removed from the outer part of the confinement chamber to a pumping chamber. This method moves the particles quickly past the saddle point in the poloidal magnetic field where they would otherwise tend to stall, and provides external control over the rate of removal by controlling the magnitude of the electric field.

  16. Noise Studies on Injected-Beam Crossed-Field Devices.

    DTIC Science & Technology

    1980-11-01

    In the gyrotron, where l magnetron injection guns are used, noise under crossed-field conditions is a limiting factor in the performance of the gun...charge I affected the behavior of the beam. Two factors which seemed to give rise to these effects appeared to be in the noise generated near the cathode...circuit I bars, or 0.270". The essential electrical properties of the meander circuit, the delay ratio (C/ vph ) and coupling impedance at the level of the

  17. The Cross-field Current Instability for Substorm Expansion Onset

    SciTech Connect

    Lui, A. T. Y.

    2011-01-04

    A challenging problem in the topic of the nonlinear dynamics of the magnetosphere is the physical process responsible for the onset of magnetospheric substorms. The early collaboration with Dr. K. Papadopoulos has led to the proposal of a kinetic plasma instability, called the cross-field current instability, as the onset process. This has developed into a full-blown research effort, supplementing the initial theoretical analysis with in-depth data analysis and particle simulations. Several theoretical predictions based on this instability are successfully verified in observations. Data from the present NASA THEMIS mission provide some evidence for its validity. Further investigations for this substorm onset process are also discussed.

  18. Nonlinear growth of electron holes in cross-field wakes

    NASA Astrophysics Data System (ADS)

    Hutchinson, Ian; Haakonsen, C. B.; Zhou, C.

    2015-11-01

    Cross-field plasma flow past an obstacle is key to the physics underlying Mach-probes, space-craft charging, and the wakes of non-magnetic bodies: the solar-wind wake of the moon is a typical example. We report associated new nonlinear instability mechanisms. Ions are accelerated along the B-field into the wake, forming two beams, but they are not initially unstable to ion two-stream instabilities. Electron Langmuir waves become unstable much earlier because of an electron velocity-distribution distortion called the ``dimple''. The magnetic field, perpendicular to the flow, defines the 1-D direction of particle dynamics. In high-fidelity PIC simulations at realistic mass ratio, small electron holes--non-linearly self-binding electron density deficits--are spawned by the dimple in fe (v) near the phase-space separatrix. Most holes accelerate rapidly out of the wake, along B. However, some remain at very low speed, and grow until they are large enough to disrupt the two ion-streams, well before the ions are themselves linearly unstable. This non-linear hole growth is caused by the same mechanism that causes the dimple: cross-field drift from a lower to a higher density. Related mechanisms cause plasma near magnetized Langmuir probes to be unsteady. Partially supported by the NSF/DOE Basic Plasma Science Partnership grant DE-SC0010491.

  19. Nonlinear analysis of generalized cross-field current instability

    NASA Technical Reports Server (NTRS)

    Yoon, Peter H.; Lui, Anthony T. Y.

    1993-01-01

    Analysis of the generalized cross-field current instability is carried out in which cross-field drift of both the ions and electrons and their temperatures are permitted to vary in time. The unstable mode under consideration is the electromagnetic generalization of the classical modified-two-stream instability. The generalized instability is made of the modified-two-stream and ion-Weibel modes. The relative importance of the features associated with the ion-Weibel mode and those of the modified-two-stream mode is assessed. Specific applications are made to the Earth's neutral sheet prior to substorm onset and to the Earth's bow shock. The numerical solution indicates that the ion-Weibel mode dominates in the Earth's neutral sheet environment. In contrast, the situation for the bow shock is dominated by the modified-two-stream mode. Notable differences are found between the present calculation and previous results on ion-Weibel mode which restrict the analysis to only parallel propagating waves. However, in the case of Earth's bow shock for which the ion-Weibel mode plays no important role, the inclusion of the electromagnetic ion response is found to differ little from the previous results which treats ions responding only to the electrostatic component of the excited waves.

  20. Ion beam sputter etching

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.

    1986-01-01

    An ion beam etching process which forms extremely high aspect ratio surface microstructures using thin sputter masks is utilized in the fabrication of integrated circuits. A carbon rich sputter mask together with unmasked portions of a substrate is bombarded with inert gas ions while simultaneous carbon deposition occurs. The arrival of the carbon deposit is adjusted to enable the sputter mask to have a near zero or even slightly positive increase in thickness with time while the unmasked portions have a high net sputter etch rate.

  1. Solar coronal loop heating by cross-field wave transport

    NASA Technical Reports Server (NTRS)

    Amendt, Peter; Benford, Gregory

    1989-01-01

    Solar coronal arches heated by turbulent ion-cyclotron waves may suffer significant cross-field transport by these waves. Nonlinear processes fix the wave-propagation speed at about a tenth of the ion thermal velocity, which seems sufficient to spread heat from a central core into a large cool surrounding cocoon. Waves heat cocoon ions both through classical ion-electron collisions and by turbulent stochastic ion motions. Plausible cocoon sizes set by wave damping are in roughly kilometers, although the wave-emitting core may be only 100 m wide. Detailed study of nonlinear stabilization and energy-deposition rates predicts that nearby regions can heat to values intermediate between the roughly electron volt foot-point temperatures and the about 100 eV core, which is heated by anomalous Ohmic losses. A volume of 100 times the core volume may be affected. This qualitative result may solve a persistent problem with current-driven coronal heating; that it affects only small volumes and provides no way to produce the extended warm structures perceptible to existing instruments.

  2. Sputtering of uranium

    NASA Technical Reports Server (NTRS)

    Gregg, R.; Tombrello, T. A.

    1978-01-01

    Results are presented for an experimental study of the sputtering of U-235 atoms from foil targets by hydrogen, helium, and argon ions, which was performed by observing tracks produced in mica by fission fragments following thermal-neutron-induced fission. The technique used allowed measurements of uranium sputtering yields of less than 0.0001 atom/ion as well as yields involving the removal of less than 0.01 monolayer of the uranium target surface. The results reported include measurements of the sputtering yields for 40-120-keV protons, 40-120-keV He-4(+) ions, and 40- and 80-keV Ar-40(+) ions, the mass distribution of chunks emitted during sputtering by the protons and 80-keV Ar-40(+) ions, the total chunk yield during He-4(+) sputtering, and some limited data on molecular sputtering by H2(+) and H3(+). The angular distribution of the sputtered uranium is discussed, and the yields obtained are compared with the predictions of collision cascade theory.

  3. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1994-02-15

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material is described. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly. 11 figures.

  4. Magnetically attached sputter targets

    DOEpatents

    Makowiecki, Daniel M.; McKernan, Mark A.

    1994-01-01

    An improved method and assembly for attaching sputtering targets to cathode assemblies of sputtering systems which includes a magnetically permeable material. The magnetically permeable material is imbedded in a target base that is brazed, welded, or soldered to the sputter target, or is mechanically retained in the target material. Target attachment to the cathode is achieved by virtue of the permanent magnets and/or the pole pieces in the cathode assembly that create magnetic flux lines adjacent to the backing plate, which strongly attract the magnetically permeable material in the target assembly.

  5. Fundamental sputtering studies: Nonresonant ionization of sputtered neutrals

    SciTech Connect

    Burnett, J.W.; Pellin, M.J.; Calaway, W.F.; Gruen, D.M. ); Yates, J.T. Jr. . Dept. of Chemistry)

    1989-01-04

    Because of the practical importance of sputtering, numerous theories and computer simulations are used for predicting many aspects of the sputtering process. Unfortunately, many of the calculated sputtering results are untested by experiment. Until recently, most sputtering experiments required either very high ion fluences or the detection of only minor constituents of the sputtered flux, i.e., ions. These techniques may miss the subtleties involved in the sputtering process. High-detection-efficiency mass spectrometry, coupled with the laser ionization of neutral atoms, allows the detection of the major sputtered species with very low incident ion fluences. The depth-of-origin of sputtered atoms is one example of an important but poorly understood aspect of the sputtering process. By following the sputtering yield of a substrate atom with various coverages of an adsorbed overlayer, the depth of origin of sputtered atoms has been determined. Our results indicate that two-thirds of the sputtered flux originates in the topmost atomic layer. The ion-dose dependence of sputtering yields has long been assumed to be quite minor for low- to-moderate primary ion fluences. We have observed a two-fold decrease in the sputtering yield of the Ru(0001) surface for very low primary ion fluences. Data analysis results in a cross section for damage of 2.7 {plus minus} 1.0 {times} 10{sup {minus}15}cm{sup 2}. 40 refs., 3 figs., 2 tabs.

  6. Influence of sputtering power on the optical properties of ITO thin films

    SciTech Connect

    K, Aijo John; M, Deepak T, Manju; Kumar, Vineetha V.

    2014-10-15

    Tin doped indium oxide films are widely used in transparent conducting coatings such as flat panel displays, crystal displays and in optical devices such as solar cells and organic light emitting diodes due to the high electrical resistivity and optical transparency in the visible region of solar spectrum. The deposition parameters have a commendable influence on the optical and electrical properties of the thin films. In this study, ITO thin films were prepared by RF magnetron sputtering. The properties of the films prepared under varying sputtering power were compared using UV- visible spectrophotometry. Effect of sputtering power on the energy band gap, absorption coefficient and refractive index are investigated.

  7. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  8. Magnetron sputtered boron films

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  9. Physics of ion sputtering

    SciTech Connect

    Robinson, M.T.

    1984-04-01

    The ejection of atoms by the ion bombardment of solids is discussed in terms of linear collision cascade theory. A simple argument describes the energies of the ejecta, but elaborate models are required to obtain accurate sputtering yields and related quantities. These include transport theoretical models based on linearized Boltzmann equations, computer simulation models based on the binary collision approximation, and classical many-body dynamical models. The role of each kind of model is discussed. Several aspects of sputtering are illustrated by results from the simulation code MARLOWE. 20 references, 6 figures.

  10. Data Diode

    SciTech Connect

    2014-11-07

    The Data Diode is a data security technology that can be deployed within an organization's defense-in-depth computer network strategy for information assurance. For internal security, the software creates an environment within the network where an organization's approved users can work freely inside an enclave of protected data, but file transfers out of the enclave is restricted. For external security, once a network intruder has penetrated the network, the intruder is able to "see" the protected data, but is unable to download the actual data. During the time it takes for the intruder to search for a way around the obstacle created by the Data Diode, the network's intrusion detection technologies can locate and thwart the malicious intent of the intruder. Development of the Data Diode technology was made possible by funding from the Intelligence Advanced Research Projects Activity (IARPA).

  11. Sputtered Thin Film Research

    DTIC Science & Technology

    1976-02-01

    percent HF, and boiling aqua - regia , did not result in any significant etching of the HfOg. Aqueous solutions of K0H and NaOH had no appreciable effect...horn Report) IB. SUPPLEMENTARY NOTES 19. KEY WORDS rContfnue on reverse elde II neceeemy and Identity by block number) Reactive sputtering

  12. Theory of instabilities in crossed-field discharges at low pressures

    SciTech Connect

    Abolmasov, Sergey N.; Samukawa, Seiji; Bizyukov, Alexander A.

    2007-09-15

    Anode layer thruster, Penning, cylindrical magnetron, and inverted-magnetron discharges all behave, at pressures below about 10{sup -4} Torr, as crossed-field discharges. At such low pressures, a crossed-field discharge is pure electron plasma and most of the discharge voltage appears across an electron sheath so that the electric field is orthogonal to the magnetic field. The principal difficulties in the practical use of these discharges in this pressure range arise from instabilities in the discharge, which are commonly attributed to diocotron instabilities in the electron sheath. On the contrary, this paper describes a theory of the electron sheath based on the classical expression for the cross-field mobility of electrons. The theory predicts that the observed instabilities, accompanied by appearance of pulses of excess energy electrons at the cathode(s) and nonlinearity in the discharge characteristics, are simply the result of periodic travel of the electron sheath through the discharge gap.

  13. Noble gas sputtering calculations using TRIM

    SciTech Connect

    Greene, J.P.; Nemanich, J.; Thomas, G.E.; Schiel, S.L.

    1996-12-31

    In conjunction with our experimental work on saddle field ion sputtering, we have attempted to apply the Monte Carlo program TRIM (Transport of Ions in Matter) to calculate the sputter yields for a variety of noble gas sputtering applications. Comparison with experiments are shown. Information extracted from these analyses have proved useful in optimizing the experimental sputtering parameters. Calculated sputter yields obtained utilizing TRIM are presented for noble gas sputtering of a variety of materials common to nuclear target production.

  14. The adapting of the crossed-field directional amplifier to the requirements of the SPS

    NASA Technical Reports Server (NTRS)

    Brown, W. C.

    1980-01-01

    Progress in adapting the crossed-field directional amplifier to the SPS is reviewed. Special emphasis is given to (1) recent developments in controlling the phase and amplitude of the microwave power output, (2) a received architecture for its placement in the subarray, and (3) recent developments in the critical pivotal areas of noise, potential cathode life, and efficiency.

  15. Low-Energy Sputtering Research

    NASA Technical Reports Server (NTRS)

    Ray, P. K.; Shutthanandan, V.

    1999-01-01

    An experimental study is described to measure low-energy (less than 600 eV) sputtering yields of molybdenum with xenon ions using Rutherford backscattering spectroscopy (RBS) and secondary neutral mass spectroscopy (SNMS). An ion gun was used to generate the ion beam. The ion current density at the target surface was approximately 30 (micro)A/sq cm. For RBS measurements, the sputtered material was collected on a thin aluminum strip which was mounted on a semi-circular collector plate. The target was bombarded with 200 and 500 eV xenon ions at normal incidence. The differential sputtering yields were measured using the RBS method with 1 MeV helium ions. The differential yields were fitted with a cosine fitting function and integrated with respect to the solid angle to provide the total sputtering yields. The sputtering yields obtained using the RBS method are in reasonable agreement with those measured by other researchers using different techniques. For the SNMS measurements, 150 to 600 eV xenon ions were used at 50deg angle of incidence. The SNMS spectra were converted to sputtering yields for perpendicular incidence by normalizing SNMS spectral data at 500 eV with the yield measured by Rutherford backscattering spectrometry. Sputtering yields as well as the shape of the yield-energy curve obtained in this manner are in reasonable agreement with those measured by other researchers using different techniques. Sputtering yields calculated by using two semi-spherical formulations agree reasonably well with measured data. The isotopic composition of secondary ions were measured by bombarding copper with xenon ions at energies ranging from 100 eV to 1.5 keV. The secondary ion flux was found to be enriched in heavy isotopes at low incident ion energies. The heavy isotope enrichment was observed to decrease with increasing impact energy. Beyond 700 eV, light isotopes were sputtered preferentially with the enrichment remaining nearly constant.

  16. Sputtering. [as deposition technique in mechanical engineering

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  17. Electron Cross-field Transport in a Low Power Cylindrical Hall Thruster

    SciTech Connect

    A. Smirnov; Y. Raitses; N.J. Fisch

    2004-06-24

    Conventional annular Hall thrusters become inefficient when scaled to low power. Cylindrical Hall thrusters, which have lower surface-to-volume ratio, are therefore more promising for scaling down. They presently exhibit performance comparable with conventional annular Hall thrusters. Electron cross-field transport in a 2.6 cm miniaturized cylindrical Hall thruster (100 W power level) has been studied through the analysis of experimental data and Monte Carlo simulations of electron dynamics in the thruster channel. The numerical model takes into account elastic and inelastic electron collisions with atoms, electron-wall collisions, including secondary electron emission, and Bohm diffusion. We show that in order to explain the observed discharge current, the electron anomalous collision frequency {nu}{sub B} has to be on the order of the Bohm value, {nu}{sub B} {approx} {omega}{sub c}/16. The contribution of electron-wall collisions to cross-field transport is found to be insignificant.

  18. Effect of electron thermal anisotropy on the kinetic cross-field streaming instability

    NASA Technical Reports Server (NTRS)

    Tsai, S. T.; Tanaka, M.; Gaffey, J. D., Jr.; Wu, C. S.; Da Jornada, E. H.; Ziebell, L. F.

    1984-01-01

    The investigation of the kinetic cross-field streaming instability, motivated by the research of collisionless shock waves and previously studied by Wu et al. (1983), is discussed more fully. Since in the ramp region of a quasi-perpendicular shock electrons can be preferentially heated in the direction transverse to the ambient magnetic field, it is both desirable and necessary to include the effect of the thermal anisotropy on the instability associated with a shock. It is found that Te-perpendicular greater than Te-parallel can significantly enhance the peak growth rate of the cross-field streaming instability when the electron beta is sufficiently high. Furthermore, the present analysis also improves the analytical and numerical solutions previously obtained.

  19. Two-dimensional space-charge-limited flows in a crossed-field gap

    SciTech Connect

    Koh, W. S.; Ang, L. K.

    2007-04-02

    This letter presents a two-dimensional (2D) model of space-charge-limited current in a planar crossed-field gap with a magnetic strength of B/B{sub H}=0-3, where B{sub H} is the Hull cutoff magnetic field. The electrons are emitted from an infinite length strip of finite width W comparable to the gap spacing D. It is found that the 2D enhancement of the crossed-field limiting current is 1+Fx4D/({pi}W), where F (=0.05-0.5) is a normalized mean-position factor, and it is a function of B/B{sub H}. Good agreement has been obtained in comparisons with particle-in-cell simulation.

  20. Anomalous Cross-Field Current and Fluctuating Equilibrium of Magnetized Plasmas

    SciTech Connect

    Rypdal, K.; Garcia, O.E.; Paulsen, J.

    1997-09-01

    It is shown by simple physical arguments and fluid simulations that electrostatic flute-mode fluctuations can sustain a substantial cross-field current in addition to mass and energy transport. The simulations show that this current determines essential features of the fluctuating plasma equilibrium, and explain qualitatively the experimental equilibria and the coherent flute-mode structures observed in a simple magnetized torus. {copyright} {ital 1997} {ital The American Physical Society}

  1. I/J Band Low-Cost Crossed-Field Amplifier.

    DTIC Science & Technology

    1981-03-31

    Technical Report DELET-TR-78-2981-F IJ BAND LOW-COST CROSSED-FIELD AMPLIFIER Robe R. Moats D TIC Northrop Corporation Defense Systems Division E LE CT F 600...rtf Commnder US Army Commnications A Electronics Material Readiness Commnd DRSEL-PL- ST 1 DRSEL-MAMP 1 DRSEL-PP-I-PI 1 DRSEL-PA 2 1 Advisory Grop

  2. APPARENT CROSS-FIELD SUPERSLOW PROPAGATION OF MAGNETOHYDRODYNAMIC WAVES IN SOLAR PLASMAS

    SciTech Connect

    Kaneko, T.; Yokoyama, T.; Goossens, M.; Doorsselaere, T. Van; Soler, R.; Terradas, J.; Wright, A. N.

    2015-10-20

    In this paper we show that the phase-mixing of continuum Alfvén waves and/or continuum slow waves in the magnetic structures of the solar atmosphere as, e.g., coronal arcades, can create the illusion of wave propagation across the magnetic field. This phenomenon could be erroneously interpreted as fast magnetosonic waves. The cross-field propagation due to the phase-mixing of continuum waves is apparent because there is no real propagation of energy across the magnetic surfaces. We investigate the continuous Alfvén and slow spectra in two-dimensional (2D) Cartesian equilibrium models with a purely poloidal magnetic field. We show that apparent superslow propagation across the magnetic surfaces in solar coronal structures is a consequence of the existence of continuum Alfvén waves and continuum slow waves that naturally live on those structures and phase-mix as time evolves. The apparent cross-field phase velocity is related to the spatial variation of the local Alfvén/slow frequency across the magnetic surfaces and is slower than the Alfvén/sound velocities for typical coronal conditions. Understanding the nature of the apparent cross-field propagation is important for the correct analysis of numerical simulations and the correct interpretation of observations.

  3. Sputtering of fast meteoroids' surface

    NASA Astrophysics Data System (ADS)

    Popova, O. P.; Strelkov, A. S.; Sidneva, S. N.

    Entering meteoroids are subjected by direct impacts of molecules of the individual constituents of the air, when the body approaching the Earth at heights of about 300-100 km. At meteor velocities about 72 km/s the energy of air molecules is about 800 eV and oxygen atoms have energy about 400 eV. Particles with such energies don't penetrate into deep layers of entering body and are concentrated in narrow surface layer of about hundreds angstroms. Action of air particles on meteoroid leads to both heating of meteoroid and sputtering of meteoroid surface. Sputtering effect was supposed as explanation of this high altitude ionization and luminosity (Brosch et al, 2001), which aren't explained by classical ablation theory. Sputtering results in appearance of fast particles, which also may be exited and/or ionized. Flux of these particles causes formation of ionized meteor trails recording by radars. For bigger bodies fast particles may create luminous area at the altitudes above altitude of intensive evaporation. We demonstrate physical model, which allows us to describe sputtering of meteoroid surface under impacts of incoming air particles. We consider sputtering of meteoroid with composition close to hondritic one at the altitude 150 km. Fast particles are really sputtered from meteoroid surface. They carry out about 10% of incoming flux energy. There are also reflected particles, but the most part of total particle outcome is formed by particles of meteor substance. Presence of fast particles possibly explains a large size of meteors in diffuse stage at high altitudes (above 130 km). The sputtering is neglectable in the case of meteor velocities below 30 km/s. Sputtered and reflected particles have enough high ionization degree (˜ (1-5) 10-2, that is larger than ionization degree of surrounding atmosphere (˜ 10-5div 10-6)).

  4. Diode and Diode Circuits, a Programmed Text.

    ERIC Educational Resources Information Center

    Balabanian, Norman; Kirwin, Gerald J.

    This programed text on diode and diode circuits was developed under contract with the United States Office of Education as Number 4 in a series of materials for use in an electrical engineering sequence. It is intended as a supplement to a regular text and other instructional material. (DH)

  5. Improved refractory coatings. [sputtered coatings on substrates that form stable nitrides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A. (Inventor)

    1980-01-01

    The adhesion, friction and wear properties of sputtered refractory coatings on substrates of materials that form stable nitrides are enhanced by placing each substrate directly below a titanium carbide target of a commercial radiofrequency diode apparatus in a vacuum chamber. Nitrogen is bled into the system through a nozzle resulting in a small partial pressure of about 0.5% to 2.5% during the first two minutes of deposition. The flow of nitrogen is then stopped, and the sputtering ambient is reduced to pure argon through a nozzle without interrupting the sputtering process. When nitrogen is deliberately introduced during the crucial interface formation, some of the titanium at the interface reacts to form titanium nitride while the metal of the substrate also forms the nitride. These two nitrides atomically mixed together in the interfacial region act to more strongly bond the growing titanium carbide coating as it forms on the substrate.

  6. Cross-field transport of electrons at the magnetic throat in an annular plasma reactor

    NASA Astrophysics Data System (ADS)

    Zhang, Yunchao; Charles, Christine; Boswell, Rod

    2017-01-01

    Cross-field transport of electrons has been studied at the magnetic throat of the annular Chi-Kung reactor. This annular configuration allows the creation of a low pressure argon plasma with two distinct electron heating locations by independently operating a radio-frequency antenna surrounding the outer source tube, or an antenna housed inside the inner source tube. The two antenna cases show opposite variation trends in radial profiles of electron energy probability function, electron density, plasma potential and electron temperature. The momentum and energy transport coefficients are obtained from the electron energy probability functions, and the related electron fluxes follow the path of electron cooling across the magnetic throat.

  7. Influence of oblique magnetic field on electron cross-field transport in a Hall effect thruster

    SciTech Connect

    Miedzik, Jan; Daniłko, Dariusz; Barral, Serge

    2015-04-15

    The effects of the inclination of the magnetic field with respect to the channel walls in a Hall effect thruster are numerically studied with the use of a one-dimensional quasi-neutral Particle-In-Cell model with guiding center approximation of electron motion along magnetic lines. Parametric studies suggest that the incidence angle strongly influences electron transport across the magnetic field. In ion-focusing magnetic topologies, electrons collide predominantly on the side of the magnetic flux tube closer to the anode, thus increasing the electron cross-field drift. The opposite effect is observed in ion-defocussing topology.

  8. Electronic sputtering of carbon allotropes

    NASA Astrophysics Data System (ADS)

    Ghosh, S.; Avasthi, D. K.; Tripathi, A.; Kabiraj, D.; Singh, S.; Misra, D. S.

    2004-06-01

    Electronic sputtering of different allotropes of carbon (diamond, graphite, fullerene, a-C and a-C:H) are studied under 200 MeV Au 15+ ion irradiation. On-line elastic recoil detection analysis (ERDA) and catcher technique is employed to measure the sputtering yield of carbon from these allotropes. Erosion behavior is distinctly different in different allotropes as observed by ERDA. Hardest known material diamond does not show any sputtering within the detection limit of the experimental set up, whereas the soft polymerlike a-C:H shows highest sputtering yield (5.8 × 10 5 atoms/ion). Yields in case of other allotropes are 1 × 10 3 atoms/ion (graphite), 3 × 10 4 atoms/ion (fullerene), 1.8 × 10 4 atoms/ion (a-C), respectively. This significant variation of electronic sputtering yield of carbon in different allotropes is discussed from the viewpoint of influence of structure on ion-solid interaction. Structures of the samples are examined by Raman spectroscopy.

  9. Laser Diode Ignition (LDI)

    NASA Technical Reports Server (NTRS)

    Kass, William J.; Andrews, Larry A.; Boney, Craig M.; Chow, Weng W.; Clements, James W.; Merson, John A.; Salas, F. Jim; Williams, Randy J.; Hinkle, Lane R.

    1994-01-01

    This paper reviews the status of the Laser Diode Ignition (LDI) program at Sandia National Labs. One watt laser diodes have been characterized for use with a single explosive actuator. Extensive measurements of the effect of electrostatic discharge (ESD) pulses on the laser diode optical output have been made. Characterization of optical fiber and connectors over temperature has been done. Multiple laser diodes have been packaged to ignite multiple explosive devices and an eight element laser diode array has been recently tested by igniting eight explosive devices at predetermined 100 ms intervals.

  10. Lighting with laser diodes

    NASA Astrophysics Data System (ADS)

    Basu, Chandrajit; Meinhardt-Wollweber, Merve; Roth, Bernhard

    2013-08-01

    Contemporary white light-emitting diodes (LEDs) are much more efficient than compact fluorescent lamps and hence are rapidly capturing the market for general illumination. LEDs are also replacing halogen lamps or even newer xenon based lamps in automotive headlamps. Because laser diodes are inherently much brighter and often more efficient than corresponding LEDs, there is great research interest in developing laser diode based illumination systems. Operating at higher current densities and with smaller form factors, laser diodes may outperform LEDs in the future. This article reviews the possibilities and challenges in the integration of visible laser diodes in future illumination systems.

  11. Sputtered silicon nitride coatings for wear protection

    NASA Technical Reports Server (NTRS)

    Grill, A.; Aron, P. R.

    1982-01-01

    Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

  12. Ion beam sputtering of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Sovey, J. S.

    1978-01-01

    Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.

  13. Mass dependence of nitride sputtering

    NASA Astrophysics Data System (ADS)

    Elovikov, S. S.; Khrustachev, I. K.; Mosunov, A. S.; Yurasova, V. E.

    2003-08-01

    A molecular dynamics simulation was performed to study the sputtering yield Y for BN, AlN and GaN polycrystals of wurtzite structure as a function of the masses m 1 of bombarding ions with energies from 200 to 2000 eV. A nonmonotonic behavior of the Y ( m 1 ) curve was obtained for the irradiation by low-energy ions, the curve having a maximum with a position being dependent on m 2 / m 1 ( m 2 is the average mass of atoms in a compound). For AlN and GaN the maximum was observed at m 2 / m 1 = 2, and for BN at m 2 / m 1 = 1. The effect of the mass of bombarding ions on the mean energies and energy spectra of sputtered particles, the depth of sputtering origin, and the generation of emitted atoms for nitrides was also investigated and discussed.

  14. Depth profiling of organic films with X-ray photoelectron spectroscopy using C60+ and Ar+ co-sputtering.

    PubMed

    Yu, Bang-Ying; Chen, Ying-Yu; Wang, Wei-Ben; Hsu, Mao-Feng; Tsai, Shu-Ping; Lin, Wei-Chun; Lin, Yu-Chin; Jou, Jwo-Huei; Chu, Chih-Wei; Shyue, Jing-Jong

    2008-05-01

    By sputtering organic films with 10 kV, 10 nA C60+ and 0.2 kV, 300 nA Ar+ ion beams concurrently and analyzing the newly exposed surface with X-ray photoelectron spectroscopy, organic thin-film devices including an organic light-emitting diode and a polymer solar cell with an inverted structure are profiled. The chemical composition and the structure of each layer are preserved and clearly observable. Although C60+ sputtering is proven to be useful for analyzing organic thin-films, thick organic-devices cannot be profiled without the low-energy Ar+ beam co-sputtering due to the nonconstant sputtering rate of the C60+ beam. Various combinations of ion-beam doses are studied in this research. It is found that a high dosage of the Ar+ beam interferes with the C60+ ion beam, and the sputtering rate decreases with increasing the total ion current. The results suggest that the low-energy single-atom projectile can disrupt the atom deposition from the cluster ion beams and greatly extend the application of the cluster ion-sputtering. By achievement of a steady sputtering rate while minimizing the damage accumulation, this research paves the way to profiling soft matter and organic electronics.

  15. ENERGETIC PARTICLE CROSS-FIELD PROPAGATION EARLY IN A SOLAR EVENT

    SciTech Connect

    Laitinen, T.; Dalla, S.; Marsh, M. S.

    2013-08-20

    Solar energetic particles (SEPs) have been observed to easily spread across heliographic longitudes, and the mechanisms responsible for this behavior remain unclear. We use full-orbit simulations of a 10 MeV proton beam in a turbulent magnetic field to study to what extent the spread across the mean field can be described as diffusion early in a particle event. We compare the full-orbit code results to solutions of a Fokker-Planck equation including spatial and pitch angle diffusion, and of one including also propagation of the particles along random-walking magnetic field lines. We find that propagation of the particles along meandering field lines is the key process determining their cross-field spread at 1 AU at the beginning of the simulated event. The mean square displacement of the particles an hour after injection is an order of magnitude larger than that given by the diffusion model, indicating that models employing spatial cross-field diffusion cannot be used to describe early evolution of an SEP event. On the other hand, the diffusion of the particles from their initial field lines is negligible during the first 5 hr, which is consistent with the observations of SEP intensity dropouts. We conclude that modeling SEP events must take into account the particle propagation along meandering field lines for the first 20 hr of the event.

  16. Effect of Secondary Electron Emission on Electron Cross-Field Current in ExB Discharges

    NASA Astrophysics Data System (ADS)

    Raitses, Yevgeny; Kaganovich, Igor D.; Khrabrov, Alex V.; Campanell, Michael D.; Tokluoglu, Erinc; Sydorenko, Dmytro; Smolyakov, Andrei

    2012-10-01

    This paper reviews recent experimental, theoretical, and numerical studies of plasma-wall interaction in a weakly collisional magnetized plasma bounded with channel walls made from different materials [1-3]. A low-pressure E x B plasma discharge of the Hall thruster was used to characterize the electron current across the magnetic field and its dependence on the applied voltage and the electron-induced secondary electron emission (SEE) from the channel wall [1]. The presence of a depleted anisotropic electron energy distribution function with beams of secondary electrons was predicted to explain the enhancement of the electron cross-field current observed in experiments. Without the SEE, the electron cross-field transport can be reduced from anomalously high to nearly classical collisional level. The suppression of the SEE was achieved using an engineered carbon-velvet material for the channel walls [3]. Both theoretically and experimentally, it is shown that the electron emission from the walls can limit the maximum achievable electric field in the magnetized plasma. [4pt] [1] Y. Raitses, et al, IEEE Trans. on Plasma Scie. 39, 995 (2011). [0pt] [2] M. D. Campanell, et al, Phys. Rev. Lett. 108, 235001 (2012). [0pt] [3] Y. Raitses, et al, J.Appl. Phys. 99, 036103 (2006).

  17. Disorder-free sputtering method on graphene

    SciTech Connect

    Qiu Xue Peng; Shin Young Jun; Niu Jing; Kulothungasagaran, Narayanapillai; Kalon, Gopinadhan; Yang, Hyunsoo; Qiu Caiyu; Yu Ting

    2012-09-15

    Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.

  18. Modeling target erosion during reactive sputtering

    NASA Astrophysics Data System (ADS)

    Strijckmans, K.; Depla, D.

    2015-03-01

    The influence of the reactive sputter conditions on the racetrack and the sputter profile for an Al/O2 DC reactive sputter system is studied by modeling. The role of redeposition, i.e. the deposition of sputtered material back on the target, is therefore taken into account. The used model RSD2013 is capable of simulating the effect of redeposition on the target condition in a spatial resolved way. Comparison between including and excluding redeposition in the RSD2013 model shows that the in-depth oxidation profile of the target differs. Modeling shows that it is important to distinguish between the formed racetrack, i.e. the erosion depth profile, and the sputter profile. The latter defines the distribution of the sputtered atoms in the vacuum chamber. As the target condition defines the sputter yield, it does determine the racetrack and the sputter profile of the planar circular target. Both the shape of the racetrack and the sputter profile change as function of the redeposition fraction as well as function of the oxygen flow change. Clear asymmetries and narrowing are observed for the racetrack shape. Similar effects are noticed for the sputter profile but to a different extent. Based on this study, the often heard misconception that the racetrack shape defines the distribution of the sputtered atoms during reactive sputtering is proven to be wrong.

  19. Bypass diode integration

    NASA Technical Reports Server (NTRS)

    Shepard, N. F., Jr.

    1981-01-01

    Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

  20. Electron Cross-field Transport in a Miniaturized Cylindrical Hall Thruster

    SciTech Connect

    Smirnov Artem, Raitses Yevgeny, Fisch Nathaniel J

    2005-10-14

    Conventional annular Hall thrusters become inefficient when scaled to low power. Cylindrical Hall thrusters, which have lower surface-to-volume ratio, are more promising for scaling down. They presently exhibit performance comparable with conventional annular Hall thrusters. The present paper gives a review of the experimental and numerical investigations of electron crossfield transport in the 2.6 cm miniaturized cylindrical Hall thruster (100 W power level). We show that, in order to explain the discharge current observed for the typical operating conditions, the electron anomalous collision frequency {nu}{sub b} has to be on the order of the Bohm value, {nu}{sub B} {approx} {omega}{sub c}/16. The contribution of electron-wall collisions to cross-field transport is found to be insignificant. The optimal regimes of thruster operation at low background pressure (below 10{sup -5} Torr) in the vacuum tank appear to be different from those at higher pressure ({approx} 10{sup -4} Torr).

  1. Thermal effects and space-charge limited transition in crossed-field devices

    SciTech Connect

    Marini, Samuel; Rizzato, Felipe B.; Pakter, Renato

    2014-08-15

    A fully kinetic model for the electron flow in a crossed field device is derived and used to determine the system stationary states. It is found that for low injection temperatures, there is a simultaneous presence of distinct stationary solutions and an abrupt transition between accelerating and space-charge limited regimes. On the other hand, for high injection temperatures, there is only a single stationary solution branch and the change between the regimes becomes continuous. For intermediate temperatures, it is then identified a critical point that separates the abrupt and continuous behaviors. It is also investigated how intrinsic space-charge oscillations may drive stationary states unstable in certain parameter regimes. The results are verified with N-particle self-consistent simulations.

  2. Plasma heating at collisionless shocks due to the kinetic cross-field streaming instability

    NASA Technical Reports Server (NTRS)

    Winske, D.; Quest, K. B.; Tanaka, M.; Wu, C. S.

    1985-01-01

    Heating at collisionless shocks due to the kinetic cross-field streaming instability, which is the finite beta (ratio of plasma to magnetic pressure) extension of the modified two stream instability, is studied. Heating rates are derived from quasi-linear theory and compared with results from particle simulations to show that electron heating relative to ion heating and heating parallel to the magnetic field relative to perpendicular heating for both the electrons and ions increase with beta. The simulations suggest that electron dynamics determine the saturation level of the instability, which is manifested by the formation of a flattop electron distribution parallel to the magnetic field. As a result, both the saturation levels of the fluctuations and the heating rates decrease sharply with beta. Applications of these results to plasma heating in simulations of shocks and the earth's bow shock are described.

  3. Local and global effects of the cross-field current instability

    NASA Technical Reports Server (NTRS)

    Lui, A. T. Y.

    1996-01-01

    The cross-field current instability (CCI) was proposed elsewhere as a plausible mechanism for the initiation and intensification of substorm expansions. This instability encompasses the modified two stream, the ion-Weibel and the lower hybrid drift modes. The work carried out in relation to this instability and its local and global effects is reviewed. Predicted local effects include current reduction, particle acceleration, the excitation of oblique whistlers and lower hybrid drift waves, and the breakdown of the frozen-in-field condition through anomalous dissipation. The predicted global effects of CCI include the offset of force equilibrium and the generation of field aligned currents at the disruption site, which allow the efficient large scale transportation of mass, momentum and energy within the magnetosphere.

  4. Sputtering technology in solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1978-01-01

    Potential and present sputtering technology is discussed as it applies to the deposition of solid film lubricants particularly MoS2, WS2, and PTFE. Since the sputtered films are very thin, the selection of the sputtering parameters and substrate condition is very critical as reflected by the lubricating properties. It was shown with sputtered MoS2 films that the lubricating characteristics are directly affected by the selected sputtering parameters (power density, pressure, sputter etching, dc-biasing, etc.) and the substrate temperature, chemistry, topography and the environmental conditions during the friction tests. Electron microscopy and other surface sensitive analytical techniques illustrate the resulting changes in sputtered MoS2 film morphology and chemistry which directly influence the film adherence and frictional properties.

  5. Etalon laser diode

    SciTech Connect

    Allen, L.B.; Koenig, H.G.; Rice, R.R.

    1981-08-18

    A laser diode is disclosed that is suitable for integrated and fiber optic applications requiring single transverse and single longitudinal mode operation. The single transverse mode is provided by making a gallium arsenide double heterostructural laser diode with a narrow stripe width and a relatively long length. The single longitudinal mode operation is provided by cracking the diode transverse to the stripe at one or more locations to form internal etalons in the laser cavity.

  6. A novel sputtering technique: Inductively Coupled Impulse Sputtering (ICIS)

    NASA Astrophysics Data System (ADS)

    Loch, D. A. L.; Ehiasarian, A. P.

    2012-09-01

    Sputtering magnetic materials with magnetron based systems has the disadvantage of field quenching and variation of alloy composition with target erosion. The advantage of eliminating magnetic fields in the chamber is that this enables sputtered particles to move along the electric field more uniformly. Inductively coupled impulse sputtering (ICIS) is a form of high power impulse magnetron sputtering (HIPIMS) without a magnetic field where a high density plasma is produced by a high power radio frequency (RF) coil in order to sputter the target and ionise the metal vapour. In this emerging technology, the effects of power and pressure on the ionisation and deposition process are not known. The setup comprises of a 13.56 MHz pulsed RF coil pulsed with a duty cycle of 25 %. A pulsed DC voltage of 1900 V was applied to the cathode to attract Argon ions and initiate sputtering. Optical emission spectra (OES) for Cu and Ti neutrals and ions at constant pressure show a linear intensity increase for peak RF powers of 500 W - 3400 W and a steep drop of intensity for a power of 4500 W. Argon neutrals show a linear increase for powers of 500 W - 2300 W and a saturation of intensity between 2300 W - 4500 W. The influence of pressure on the process was studied at a constant peak RF power of 2300 W. With increasing pressure the ionisation degree increased. The microstructure of the coatings shows globular growth at 2.95×10-2 mbar and large-grain columnar growth at 1.2×10-1 mbar. Bottom coverage of unbiased vias with a width of 0.360 μm and aspect ratio of 2.5:1 increased from 15 % to 20 % for this pressure range. The current work has shown that the concept of combining a RF powered coil with a magnet-free high voltage pulsed DC powered cathode is feasible and produces very stable plasma. The experiments have shown a significant influence of power and pressure on the plasma and coating microstructure.

  7. Coaxial foilless diode

    SciTech Connect

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  8. HEAT DIODE CONVERTER

    DTIC Science & Technology

    DIODES, * ELECTRIC POWER PRODUCTION, *REFRACTORY MATERIALS, *THERMIONIC EMISSION, CESIUM, COPPER, DISCHARGE TUBES, ELECTRONS, EVAPORATION, MOLYBDENUM...PLASMAS(PHYSICS), POWER SUPPLIES, REFLECTION, THERMAL CONDUCTIVITY, THERMIONIC CONVERTERS , VAPORS.

  9. FISSION HEAT DIODE CONVERTER

    DTIC Science & Technology

    CESIUM, *DIODES, * ELECTRIC POWER PRODUCTION, ADSORPTION, AUXILIARY POWER PLANTS, ELECTRONS, OSCILLATION, PLASMAS(PHYSICS), POWER SUPPLIES...SCATTERING, SOURCES, SPACECRAFT, THERMAL CONDUCTIVITY, THERMIONIC CONVERTERS , THERMIONIC EMISSION, TUNGSTEN, VAPORS

  10. Transport of sputtered particles in capacitive sputter sources

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan; Mussenbrock, Thomas

    2015-07-01

    The transport of sputtered aluminum inside a multi frequency capacitively coupled plasma chamber is simulated by means of a kinetic test multi-particle approach. A novel consistent set of scattering parameters obtained for a modified variable hard sphere collision model is presented for both argon and aluminum. An angular dependent Thompson energy distribution is fitted to results from Monte Carlo simulations and used for the kinetic simulation of the transport of sputtered aluminum. For the proposed configuration, the transport of sputtered particles is characterized under typical process conditions at a gas pressure of p = 0.5 Pa. It is found that—due to the peculiar geometric conditions—the transport can be understood in a one dimensional picture, governed by the interaction of the imposed and backscattered particle fluxes. It is shown that the precise geometric features play an important role only in proximity to the electrode edges, where the effect of backscattering from the outside chamber volume becomes the governing mechanism.

  11. Fabrication of boron sputter targets

    SciTech Connect

    Makowiecki, Daniel M.; McKernan, Mark A.

    1995-01-01

    A process for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B.sub.4 C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil.

  12. Energy spectrum of sputtered uranium

    NASA Technical Reports Server (NTRS)

    Weller, R. A.; Tombrello, T. A.

    1977-01-01

    The fission track technique for detecting uranium 235 was used in conjunction with a mechanical time-of-flight spectrometer to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E to the -1.77 power for E is approximately greater than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the ramdom collision cascade model of sputtering.

  13. Fabrication of boron sputter targets

    DOEpatents

    Makowiecki, D.M.; McKernan, M.A.

    1995-02-28

    A process is disclosed for fabricating high density boron sputtering targets with sufficient mechanical strength to function reliably at typical magnetron sputtering power densities and at normal process parameters. The process involves the fabrication of a high density boron monolithe by hot isostatically compacting high purity (99.9%) boron powder, machining the boron monolithe into the final dimensions, and brazing the finished boron piece to a matching boron carbide (B{sub 4}C) piece, by placing aluminum foil there between and applying pressure and heat in a vacuum. An alternative is the application of aluminum metallization to the back of the boron monolithe by vacuum deposition. Also, a titanium based vacuum braze alloy can be used in place of the aluminum foil. 7 figs.

  14. In-situ sputtering apparatus

    DOEpatents

    Erickson, Mark R.; Poole, Henry J.; Custer, III, Arthur W.; Hershcovitch, Ady

    2015-06-09

    A sputtering apparatus that includes at least a target presented as an inner surface of a confinement structure, the inner surface of the confinement structure is preferably an internal wall of a circular tube. A cathode is disposed adjacent the internal wall of the circular tube. The cathode preferably provides a hollow core, within which a magnetron is disposed. Preferably, an actuator is attached to the magnetron, wherein a position of the magnetron within the hollow core is altered upon activation of the actuator. Additionally, a carriage supporting the cathode and communicating with the target is preferably provided, and a cable bundle interacting with the cathode and linked to a cable bundle take up mechanism provided power and coolant to the cathode, magnetron, actuator and an anode of the sputtering apparatus.

  15. Velocimetry with diode lasers

    NASA Astrophysics Data System (ADS)

    de Mul, F. F. M.; Jentink, H. W.; Koelink, M.; Greve, J.; Aarnoudse, J. G.

    The history of the application of diode lasers in velocimetry is reviewed. Some problems arising when using those lasers, e.g., mode hopping and wavelength shifts caused by temperature effects, are discussed, together with coherence effects encountered with diode lasers. The application in dual-beam velocimetry, in direct-contact velocimetry and in velocimetry using self-mixing will be discussed.

  16. Vortex diode jet

    DOEpatents

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  17. Diodes stabilize LED output

    NASA Technical Reports Server (NTRS)

    Deters, R. A.

    1977-01-01

    Small-signal diodes are placed in series with light-emitting diodes (LED's) to stabilize LED output against temperature fluctuations. Simple inexpensive method compensates for thermal fluctuations over a broad temperature range. Requiring few components, technique is particularly useful where circuit-board space is limited.

  18. Sputtering Holes with Ion Beamlets

    NASA Technical Reports Server (NTRS)

    Byers, D. C.; Banks, B. A.

    1974-01-01

    Ion beamlets of predetermined configurations are formed by shaped apertures in the screen grid of an ion thruster having a double grid accelerator system. A plate is placed downstream from the screen grid holes and attached to the accelerator grid. When the ion thruster is operated holes having the configuration of the beamlets formed by the screen grid are sputtered through the plate at the accelerator grid.

  19. Mercury Cadmium Telluride Sputtering Research.

    DTIC Science & Technology

    1982-08-28

    Material Research Corporation 8800 sputtering system used to deposit the (Hhl.x,Cdx)Te thin films by the triode-ode is shown in Fig. 1-1.()* rotating...by Dr. Comely with Dr. Esther Krikorian of the Aerospace Corporation , El Segundo, California. 28) Ferrar, R.H., Gillham, C.J., Bartlett, B., Oualch, M...Chen. 14, 44 (1975). 44) Belov, V., Personal Commnication of Dr. Cornely with Dr. Valery Belov, Vice President of Engineering, Infrared Associates, Now

  20. Collision-spike sputtering of Au nanoparticles

    DOE PAGES

    Sandoval, Luis; Urbassek, Herbert M.

    2015-08-06

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For this specific case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31% of the impact energy remains in the nanoparticles after impact; the remaindermore » is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80% of that of free nanoparticles due to the suppression of forward sputtering.« less

  1. Collision-spike sputtering of Au nanoparticles

    SciTech Connect

    Sandoval, Luis; Urbassek, Herbert M.

    2015-08-06

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For this specific case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31% of the impact energy remains in the nanoparticles after impact; the remainder is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80% of that of free nanoparticles due to the suppression of forward sputtering.

  2. Collision-spike Sputtering of Au Nanoparticles.

    PubMed

    Sandoval, Luis; Urbassek, Herbert M

    2015-12-01

    Ion irradiation of nanoparticles leads to enhanced sputter yields if the nanoparticle size is of the order of the ion penetration depth. While this feature is reasonably well understood for collision-cascade sputtering, we explore it in the regime of collision-spike sputtering using molecular-dynamics simulation. For the particular case of 200-keV Xe bombardment of Au particles, we show that collision spikes lead to abundant sputtering with an average yield of 397 ± 121 atoms compared to only 116 ± 48 atoms for a bulk Au target. Only around 31 % of the impact energy remains in the nanoparticles after impact; the remainder is transported away by the transmitted projectile and the ejecta. The sputter yield of supported nanoparticles is estimated to be around 80 % of that of free nanoparticles due to the suppression of forward sputtering.

  3. Sputtered iridium oxide for stimulation electrode coatings.

    PubMed

    Mokwa, Wilfried; Wessling, Boerge; Schnakenberg, Uwe

    2007-01-01

    This work deals with the reactive RF-powered sputter deposition of iridium oxide for use as the active stimulation layer in functional medical implants. The oxygen gettered by the growing films is determined by an approach based on generic curves. Films deposited at different stages of oxygen integration show strong differences in electrochemical behaviour, caused by different morphologies. The dependence of electrochemical activity on morphology is further illustrated by RF sputtering onto heated substrates, as well as DC sputtering onto cold substrates.

  4. Reactively sputtered thin film photovoltaic devices

    NASA Technical Reports Server (NTRS)

    Hsieh, E. J.

    1975-01-01

    The feasibility of a reactively sputtered thin film CdS - Cu2S solar cell is proven. Identification of the reactively sputtered Cu2S film is made by X-ray diffractometer and spectro-transmission measurements. Because of its simplicity, economical use of material, and high yield, the reactive sputtering process promises to be a low cost method for producing CdS - Cu2S solar cells.

  5. Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

    NASA Astrophysics Data System (ADS)

    Perez-Wurfl, Ivan; Hao, Xiaojing; Gentle, Angus; Kim, Dong-Ho; Conibeer, Gavin; Green, Martin. A.

    2009-10-01

    We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p-type and phosphorus for n-type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.

  6. A high power cross-field amplifier at X-Band

    SciTech Connect

    Eppley, K.; Feinstein, J.; Ko, K.; Kroll, N.; Lee, T.; Nelson, E.

    1991-05-01

    A high power cross-field amplifier is under development at SLAC with the objective of providing sufficient peak power to feed a section of an X-Band (11.424 GHz) accelerator without the need for pulse compression. The CFA being designed employs a conventional distributed secondary emission cathode but a novel anode structure which consists of an array of vane resonators alternatively coupled to a rectangular waveguide. The waveguide impedance (width) is tapered linearly from input to output so as to provide a constant RF voltage at the vane tips, leading to uniform power generation along the structure. Nominal design for this tube calls for 300 MW output power, 20 dB gain, DC voltage 142 KV, magnetic field 5 KG, anode-cathode gap 3.6 mm and total interaction length of about 60 cm. These specifications have been supported by computer simulations of both the RF slow wave structure as well as the electron space charge wave interaction. We have used ARGUS to model the cold circuit properties and CONDOR to model the electronic power conversion. An efficiency of 60 percent can be expected. We will discuss the details of the design effort. 5 refs., 6 figs.

  7. New perspectives on the dynamics of AC and DC plasma arcs exposed to cross-fields

    NASA Astrophysics Data System (ADS)

    Abdo, Youssef; Rohani, Vandad; Cauneau, François; Fulcheri, Laurent

    2017-02-01

    Interactions between an arc and external fields are crucially important for the design and the optimization of modern plasma torches. Multiple studies have been conducted to help better understand the behavior of DC and AC current arcs exposed to external and ‘self-induced’ magnetic fields, but the theoretical foundations remain very poorly explored. An analytical investigation has therefore been carried out in order to study the general behavior of DC and AC arcs under the effect of random cross-fields. A simple differential equation describing the general behavior of a planar DC or AC arc has been obtained. Several dimensionless numbers that depend primarily on arc and field parameters and the main arc characteristics (temperature, electric field strength) have also been determined. Their magnitude indicates the general tendency pattern of the arc evolution. The analytical results for many case studies have been validated using an MHD numerical model. The main purpose of this investigation was deriving a practical analytical model for the electric arc, rendering possible its stabilization and control, and the enhancement of the plasma torch power.

  8. Role of cross-field drifts in the onset of divertor detachment

    NASA Astrophysics Data System (ADS)

    Groth, Mathias; Allen, S. L.; Fenstermacher, M. E.; Hill, D. H.; Makowski, M. A.; McLean, A. G.; Lasnier, C. J.; Porter, G. D.; Rognlien, T. D.; Briesemeister, A. R.; Unterberg, E. A.; Leonard, A. W.; Watkins, J. G.

    2015-11-01

    The impact of cross-field drifts in divertor configurations was investigated in DIII-D L and H-mode discharges. The studies show that the electron temperature at the outer divertor plate is reduced to below 2 eV at about 20 % lower pedestal density in configurations with the ion Bx ∇B direction toward the divertor X-point. When attached, these plasmas have significantly lower electron temperatures and and higher densities in the inner than in the outer divertor as directly measured with divertor Thomson scattering and inferred from line emission imaging using tangentially viewing cameras. Upon reversal of the toroidal field direction, the divertor conditions were observed in-out symmetric. Simulations with the edge fluid code UEDGE show that poloidal flows due to the radial electric field in the private flux region dominate the divertor asymmetries. Work supported by US DOE under DE-AC52-07NA27344, DE-FC02-04ER54698, DE-AC05-00OR22725, and DE-AC04-94AL85000.

  9. Cross-field electron transport induced by a rotating spoke in a cylindrical Hall thruster

    NASA Astrophysics Data System (ADS)

    Ellison, C. L.; Raitses, Y.; Fisch, N. J.

    2012-01-01

    Rotating spoke phenomena have been observed in a variety of Hall thruster and other E × B devices. It has been suggested that the spoke may be associated with the enhancement of the electron cross-field transport. In this paper, the current conducted across the magnetic field via a rotating spoke has been directly measured for the first time in the E × B discharge of a cylindrical Hall thruster. The spoke current was measured using a segmented anode. Synchronized measurements with a high speed camera and a four-segment anode allow observation of the current as a function of time and azimuthal position. Upwards of 50% of the total current is conducted through the spoke, which occupies a quarter of the Hall thruster channel area. To determine the transport mechanism, emissive and Langmuir probes were installed to measure fluctuating plasma potential, electron density, and temperature. A perturbed, azimuthal electric field and density are observed to oscillate in-phase with the rotating spoke. The resulting drift current is found to enhance electron transport with a magnitude equal to the spoke current to within margins of error.

  10. Design and Simulation of the Recirculating Crossed-Field Planar Amplifier

    NASA Astrophysics Data System (ADS)

    Exelby, Steven; Greening, Geoffrey; Jordan, Nicholas; Simon, David; Lau, Yue Ying; Gilgenbach, Ronald; Hoff, Brad

    2016-10-01

    The Recirculating Planar Crossed-Field Amplifier (RPCFA) is a high power microwave device adapted from the Recirculating Planar Magnetron1, developed at the University of Michigan. A travelling-wave, rectangular, meander-line design has been developed in simulation that amplifies a 1.3 MW signal at 3 GHz to approximately 29 MW (13.5 dB) with nearly 53% electronic efficiency. Simulation also shows that the RPCFA is zero-drive stable, e.g., output of any appreciable power is dependent on the presence of an input RF signal. The amplifier was designed to be driven by the Michigan Electron Long Beam Accelerator (MELBA), which is currently configured to deliver a -300 kV, 1-10 kA, 0.3-1.0 µs pulse. Taking these parameters into consideration, a slow wave structure, cathode, and housing were designed using the finite element frequency domain code Ansys HFSS. The cold tube characteristics and RF field structures were then verified using the particle in cell code, MAGIC. Hot tube simulations on MAGIC were also run to calculate the RPCFA's performance, including gain and efficiency. Future work will include building a prototype RPCFA, cold testing, and performing experiments to verify the hot tube simulations. This work was supported by the AFOSR Grant FA9550-15-1-0097.

  11. Effect of Secondary Electron Emission on Electron Cross-Field Current in E×B Discharges

    SciTech Connect

    Yevgeny Raitses, Igor D. Kaganovich, Alexander Khrabrov, Dmytro Sydorenko, Nathaniel J. Fisch and Andrei Smolyakov

    2011-02-10

    This paper reviews and discusses recent experimental, theoretical, and numerical studies of plasma-wall interaction in a weakly collisional magnetized plasma bounded with channel walls made from different materials. A lowpressure ExB plasma discharge of the Hall thruster was used to characterize the electron current across the magnetic field and its dependence on the applied voltage and electron-induced secondary electron emission (SEE) from the channel wall. The presence of a depleted, anisotropic electron energy distribution function with beams of secondary electrons was predicted to explain the enhancement of the electron cross-field current observed in experiments. Without the SEE, the electron crossfield transport can be reduced from anomalously high to nearly classical collisional level. The suppression of SEE was achieved using an engineered carbon velvet material for the channel walls. Both theoretically and experimentally, it is shown that the electron emission from the walls can limit the maximum achievable electric field in the magnetized plasma. With nonemitting walls, the maximum electric field in the thruster can approach a fundamental limit for a quasineutral plasma.

  12. Cross-Field Current Instabilities in Thin Ionization Layers and the Enhanced Aurora

    SciTech Connect

    Jay R. Johnson and Hideo Okuda

    2008-05-20

    Nearly half of the time, auroral displays exhibit thin, bright layers known as \\enhanced aurora." There is a substantial body of evidence that connects these displays with thin, dense, heavy ion layers in the E-region. Based on the spectral characteristics of the enhanced layers, it is believed that they result when wave-particle interaction heats ambient electrons to energies at or just above the 17 eV ionization energy of N2. While there are several possible instabilities that could produce suprathermal electrons in thin layers, there has been no clear theoretical investigation which examines in detail how wave instabilities in the thin ionization layers could develop and produce the suprathermal electrons. We examine instabilities which would occur in thin, dense, heavy ion layers using extensive analytical analysis combined with particle simulations. We analyze a cross field current instability that is found to be strongly unstable in the heavy ion layers. Electrostatic simulations show that substantial heating of the ambient electrons occurs with energization at or above the N2 ionization energy.

  13. An advection-diffusion model for cross-field runaway electron transport in perturbed magnetic fields

    NASA Astrophysics Data System (ADS)

    Särkimäki, Konsta; Hirvijoki, Eero; Decker, Joan; Varje, Jari; Kurki-Suonio, Taina

    2016-12-01

    Disruption-generated runaway electrons (RE) present an outstanding issue for ITER. The predictive computational studies of RE generation rely on orbit-averaged computations and, as such, they lack the effects from the magnetic field stochasticity. Since stochasticity is naturally present in post-disruption plasma, and externally induced stochastization offers a prominent mechanism to mitigate RE avalanche, we present an advection-diffusion model that can be used to couple an orbit-following code to an orbit-averaged tool in order to capture the cross-field transport and to overcome the latter’s limitation. The transport coefficients are evaluated via a Monte Carlo method. We show that the diffusion coefficient differs significantly from the well-known Rechester-Rosenbluth result. We also demonstrate the importance of including the advection: it has a two-fold role both in modelling transport barriers created by magnetic islands and in amplifying losses in regions where the islands are not present.

  14. Sputtering Threshold Energies of Heavy Ions

    NASA Technical Reports Server (NTRS)

    Mantenieks, Maris A.

    1999-01-01

    Sputter erosion in ion thrusters has been measured in lifetests at discharge voltages as low as 25 V. Thruster operation at this discharge voltage results in component erosion rates sufficiently low to satisfy most mission requirements. It has been recognized that most of the internal sputtering in ion thrusters is done by doubly charged ions. Knowledge of the sputtering threshold voltage of a xenon molybdenum system would be beneficial in understanding the sputtering process as well as making more accurate calculations of the sputtering rates of ion thruster components. Sputtering threshold energies calculated from various formulations found in the literature results in values ranging from 28 to 200 eV. It is evident that some of these formulations cannot be relied upon to provide sputtering thresholds with any degree of accuracy. This paper re-examines the threshold energies measurements made in the early sixties by Askerov and Sena, and Stuart and Wehner. The threshold voltages as derived by Askerov and au have been reevaluated by using a different extrapolation method of sputter yields at low ion energies. The resulting threshold energies are in general similar to those measured by Stuart and Wehner. An empirical relationship is derived,for mercury and xenon ions for the ratio of the sputtering threshold energy to the sublimation energy as a function of the ratio of target to ion atomic mass.

  15. Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers

    NASA Astrophysics Data System (ADS)

    Chen, Shuo-Wei; Yang, Young; Wen, Wei-Chih; Li, Heng; Lu, Tien-Chang

    2016-03-01

    Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).

  16. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    SciTech Connect

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  17. Development of sputtered techniques for thrust chambers. [coolant passage closing by triode sputtering

    NASA Technical Reports Server (NTRS)

    Mullaly, J. R.; Hecht, R. J.; Broch, J. W.; Allard, P. A.

    1976-01-01

    Procedures for closing out coolant passages in regeneratively cooled thrust chambers by triode sputtering, using post and hollow Cu-0.15 percent Zr cathodes are described. The effects of aluminum composite filler materials, substrate preparation, sputter cleaning, substrate bias current density and system geometry on closeout layer bond strength and structure are evaluated. High strength closeout layers were sputtered over aluminum fillers. The tensile strength and microstructure of continuously sputtered Cu-0.15 percent Zr deposits were determined. These continuous sputtered deposits were as thick as 0.75 cm. Tensile strengths were consistently twice as great as the strength of the material in wrought form.

  18. Dust Growth by RF Sputtering

    SciTech Connect

    Churton, B.; Samarian, A. A.; Coueedel, L.

    2008-09-07

    The effect of the dust particle growth by RF sputtering on glow discharge has been investigated. It has been found that the growth of dust particles modifies the electrical characteristics of the discharge. In particularly, the absolute value of the self-bias voltage decreases during the particle growth due to the electron losses on the dust particles. To find the correlation between the dust growth and the self bias evolution, dust particles have been collected at different times. The dust particle growth rate is found to be linear.

  19. Design of a high power cross field amplifier at X band with an internally coupled waveguide

    SciTech Connect

    Eppley, K.; Ko, Kwok.

    1991-01-01

    Cross field amplifiers (CFA) have been used in many applications where high power, high frequency microwaves are needed. Although these tubes have been manufactured for decades, theoretical analysis of their properties is not as highly developed as for other microwave devices such as klystrons. We have developed a simulation model for CFAs using the PIC code CONDOR. Our simulations indicate that there are limits to the maximum RF field strength that a CEA can sustain. When the fields become too high, efficiency becomes very poor, and the currents drawn may become so large that secondary emission cannot be maintained. It is therefore desirable to reduce the circuit impedance of a very high power tube. One method for doing this, proposed by Feinstein, involves periodically coupling a standard CFA circuit to an internal waveguide. Most of the power flows in the waveguide, so the overall impedance is much reduced. By adjusting the guide dimensions one can vary the impedance. Thus one can retain high impedance at the low power end but low impedance at the high power end. In principle one can maintain constant RF voltage throughout the tube. CONDOR simulations have identified a good operating point at X band, with power generation of over 5 MW per cm and total efficiency of over 60 percent. ARGUS simulations have modelled the cold test properties of the coupled structure. The nominal design specifications are 300 MW output, 17 db gain, frequency 11.4 GHz, dc voltage 142 kV, magnetic field 5 kG, anode cathode gap 3.6 mm, total interaction length about 60 cm. We will discuss the results of code simulations and report on the status of the experimental effort.

  20. A photon thermal diode.

    PubMed

    Chen, Zhen; Wong, Carlaton; Lubner, Sean; Yee, Shannon; Miller, John; Jang, Wanyoung; Hardin, Corey; Fong, Anthony; Garay, Javier E; Dames, Chris

    2014-11-17

    A thermal diode is a two-terminal nonlinear device that rectifies energy carriers (for example, photons, phonons and electrons) in the thermal domain, the heat transfer analogue to the familiar electrical diode. Effective thermal rectifiers could have an impact on diverse applications ranging from heat engines to refrigeration, thermal regulation of buildings and thermal logic. However, experimental demonstrations have lagged far behind theoretical proposals. Here we present the first experimental results for a photon thermal diode. The device is based on asymmetric scattering of ballistic energy carriers by pyramidal reflectors. Recent theoretical work has predicted that this ballistic mechanism also requires a nonlinearity in order to yield asymmetric thermal transport, a requirement of all thermal diodes arising from the second Law of Thermodynamics, and realized here using an 'inelastic thermal collimator' element. Experiments confirm both effects: with pyramids and collimator the thermal rectification is 10.9 ± 0.8%, while without the collimator no rectification is detectable (<0.3%).

  1. Destruction of dirty ice mantles by sputtering

    NASA Technical Reports Server (NTRS)

    Aannestad, P. A.

    1973-01-01

    Dirty ice mantles are destroyed efficiently by sputtering of He atoms when clouds encounter shock velocities greater than 13-15 km/sec. Destruction due to grain-grain collisions is found to be about .001 times less efficient. Sputtering in the hot intercloud medium should make intercloud grains smaller than cloud grains.

  2. REACTIVE SPUTTER DEPOSITION OF CHROMIUM NITRIDE COATINGS

    EPA Science Inventory

    The effect of substrate temperature and sputtering gas compositon on the structure and properties of chromium-chromium nitride films deposited on C-1040 steel using r.f. magnetron sputter deposition was investigated. X-ray diffraction analysis was used to determine the structure ...

  3. Sputter metalization of Wolter type optical elements

    NASA Technical Reports Server (NTRS)

    Ledger, A. M.

    1977-01-01

    An analytical task showed that the coating thickness distribution for both internal and external optical elements coated using either electron beam or sputter sources can be made uniform and will not affect the surface figure of coated elements. Also, sputtered samples of nickel, molybdenum, iridium and ruthenium deposited onto both hot and cold substrates showed excellent adhesion.

  4. Light-emitting Diodes

    PubMed Central

    Opel, Daniel R.; Hagstrom, Erika; Pace, Aaron K.; Sisto, Krisanne; Hirano-Ali, Stefanie A.; Desai, Shraddha

    2015-01-01

    Background: In the early 1990s, the biological significance of light-emitting diodes was realized. Since this discovery, various light sources have been investigated for their cutaneous effects. Study design: A Medline search was performed on light-emitting diode lights and their therapeutic effects between 1996 and 2010. Additionally, an open-label, investigator-blinded study was performed using a yellow light-emitting diode device to treat acne, rosacea, photoaging, alopecia areata, and androgenetic alopecia. Results: The authors identified several case-based reports, small case series, and a few randomized controlled trials evaluating the use of four different wavelengths of light-emitting diodes. These devices were classified as red, blue, yellow, or infrared, and covered a wide range of clinical applications. The 21 patients the authors treated had mixed results regarding patient satisfaction and pre- and post-treatment evaluation of improvement in clinical appearance. Conclusion: Review of the literature revealed that differing wavelengths of light-emitting diode devices have many beneficial effects, including wound healing, acne treatment, sunburn prevention, phototherapy for facial rhytides, and skin rejuvenation. The authors’ clinical experience with a specific yellow light-emitting diode device was mixed, depending on the condition being treated, and was likely influenced by the device parameters. PMID:26155326

  5. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, Donald J.

    1988-01-01

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  6. Confined ion beam sputtering device and method

    DOEpatents

    Sharp, D.J.

    1986-03-25

    A hollow cylindrical target, lined internally with a sputter deposit material and open at both ends, surrounds a substrate on which sputtered deposition is to be obtained. An ion beam received through either one or both ends of the open cylindrical target is forced by a negative bias applied to the target to diverge so that ions impinge at acute angles at different points of the cylindrical target surface. The ion impingement results in a radially inward and downstream directed flux of sputter deposit particles that are received by the substrate. A positive bias applied to the substrate enhances divergence of the approaching ion beams to generate a higher sputtered deposition flux rate. Alternatively, a negative bias applied to the substrate induces the core portion of the ion beams to reach the substrate and provide ion polishing of the sputtered deposit thereon.

  7. Sputter Deposition of Metallic Sponges

    SciTech Connect

    Jankowski, A F; Hayes, J P

    2002-01-18

    Metallic films are grown with a sponge-like morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous porosity on the sub-micron scale. The stabilization of the metallic sponge is directly correlated with a limited range for the sputter deposition parameters of working gas pressure and substrate temperature. This sponge-like morphology augments the features as generally understood in the classic zone models of growth for physical vapor deposits. Nickel coatings are deposited with working gas pressures up to 4 Pa and for substrate temperatures up to 1100 K. The morphology of the deposits is examined in plan and in cross-section with scanning electron microscopy. The parametric range of gas pressure and substrate temperature (relative to absolute melt point) for the deposition processing under which the metallic sponges are produced appear universal for many metals, as for example, including gold, silver, and aluminum.

  8. Radio-frequency magnetron triode sputtering of cadmium telluride and zinc telluride films and solar cells

    NASA Astrophysics Data System (ADS)

    Sanford, Adam Lee

    The n-CdS/p-CdTe solar cell has been researched for many years now. Research groups use a variety of processes to fabricate thin-film CdS/CdTe cells, including physical vapor deposition, chemical vapor deposition, and RF diode sputtering. One of the central areas of investigation concerning CdS/CdTe cells is the problem of a Schottky barrier at the back contact. Even cells fabricated with ohmic back contacts degrade into Schottky barriers as the devices are used. This severely degrades power generation. One possible solution is to use p+-ZnTe as an interlayer between CdTe and the back contact. ZnTe is easily doped with Cu to be p-type. However, even contacts with this ZnTe interlayer degrade over time, because Cu is highly mobile and diffuses away from the contact towards the CdS/CdTe junction. Another possibility is to dope ZnTe with N. It has been demonstrated using molecular beam epitaxy and RF diode sputtering. In this study, CdTe films are fabricated using a variation of RF diode sputtering called triode sputtering. This technique allows for control of ion bombardment to the substrate during deposition. Also, a higher plasma density near the target is achieved allowing depositions at lower pressures. These films are characterized structurally to show the effects of the various deposition parameters. N-doped ZnTe films are also fabricated using this technique. These films are characterized electrically to show the effects of the various deposition parameters. Also, the effects of post-deposition annealing are observed. It is found that annealing at the right temperature can increase the conductivity of the films by a factor of 3 or more. However, annealing at higher temperatures decreases the conductivity to as low as 12% of the initial conductivity. Finally, RF triode sputtered N-doped ZnTe films are used as an interlayer at the back contact of a CdS/CdTe solar cell. The effects of annealing the device before and after contact deposition are observed

  9. Plasma reactivity in high-power impulse magnetron sputtering through oxygen kinetics

    SciTech Connect

    Vitelaru, Catalin; Lundin, Daniel; Brenning, Nils; Minea, Tiberiu

    2013-09-02

    The atomic oxygen metastable dynamics in a Reactive High-Power Impulse Magnetron Sputtering (R-HiPIMS) discharge has been characterized using time-resolved diode laser absorption in an Ar/O{sub 2} gas mixture with a Ti target. Two plasma regions are identified: the ionization region (IR) close to the target and further out the diffusion region (DR), separated by a transition region. The μs temporal resolution allows identifying the main atomic oxygen production and destruction routes, which are found to be very different during the pulse as compared to the afterglow as deduced from their evolution in space and time.

  10. Steady State Chaotic Magnetic Fields and Particle Dynamics Cross-field Transport of Particles in Chaotic Magnetic Fields

    NASA Astrophysics Data System (ADS)

    Dasgupta, B.; Ram, A.

    2009-12-01

    The observed propagation of cosmic rays in the interplanetary space cannot be explained unless there is diffusion of the energetic particles across the interplanetary magnetic field. The cross-field diffusion of cosmic rays is assumed to be due to the chaotic nature of the interplanetary/intergalactic magnetic fields. Among the classic works on this subject have been those of Parker [1] and Jokipii [2]. Parker considered the passage of cosmic ray particles and energetic solar particles in a large scale magnetic field containing small scale irregularities. In the context of cosmic ray propagation, Jokipii considered a small fluctuating component, added on to a uniform magnetic field, to study the spatial transport of particles. We consider asymmetric, steady-state magnetic fields, in three spatial dimensions, generated by currents flowing in circular loops and straight lines [3]. We find that under very special circumstances can one generate large scale coherent magnetic fields. In general, even simple asymmetric current configurations generate spatially chaotic magnetic fields in three-dimensions. The motion of charged particles in these chaotic magnetic fields is quite coherent. This is a surprising result as one generally assumes that spatially chaotic magnetic fields will give rise to chaotic particle motion. So chaotic magnetic fields by themselves do not lead to cross-field transport. However, if we consider a current system, e.g., a current loop, embedded in a uniform magnetic field then a particle can undergo cross-field transport. For cross-field diffusion of charged particles it is necessary that the magnetic field lines be three dimensional. [1] E.N. Parker, Planet. Space Sci. 13, 9, (1965) [2] J.R. Jokipii, Astrophys. J. 146, 480, (1966). [3] A.K. Ram and B. Dasgupta, in 35th EPS Conference on Plasma Phys. Hersonissos, ECA Vol.32D, O-4.059 (2008); and Eos Trans. AGU 88 (52), Fall Meet. Suppl. Abstract NG21B-0522 (2007).

  11. Sputtering erosion in ion and plasma thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1995-01-01

    An experimental set-up to measure low-energy (below 1 keV) sputtering of materials is described. The materials to be bombarded represent ion thruster components as well as insulators used in the stationary plasma thruster. The sputtering takes place in a 9 inch diameter spherical vacuum chamber. Ions of argon, krypton and xenon are used to bombard the target materials. The sputtered neutral atoms are detected by a secondary neutral mass spectrometer (SNMS). Samples of copper, nickel, aluminum, silver and molybdenum are being sputtered initially to calibrate the spectrometer. The base pressure of the chamber is approximately 2 x 10(exp -9) Torr. the primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a size approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and at 90 deg angle to the primary ion beam direction. The ion beam impinges on the target at 45 deg. For sputtering of insulators, charge neutralization is performed by flooding the sample with electrons generated from an electron gun. Preliminary sputtering results, methods of calculating the instrument response function of the spectrometer and the relative sensitivity factors of the sputtered elements will be discussed.

  12. Particle contamination formation in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Sequeda, F.; Huang, C.

    1997-07-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique which provides real-time, {ital in situ} imaging of particles {gt}0.3 {mu}m on the target, substrate, or in the plasma. Using this technique, we demonstrate that the mechanisms for particle generation, transport, and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes, due to the inherent spatial nonuniformity of magnetically enhanced plasmas. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. There, film redeposition induces filament or nodule growth. Sputter removal of these features is inhibited by the dependence of sputter yield on angle of incidence. These features enhance trapping of plasma particles, which then increases filament growth. Eventually the growths effectively {open_quotes}short-circuit{close_quotes} the sheath, causing high currents to flow through these features. This, in turn, causes mechanical failure of the growth resulting in fracture and ejection of the target contaminants into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests it may be universal to many sputter processes. {copyright} {ital 1997 American Vacuum Society.}

  13. Interface states of Ag/(110)GaAs Schottky diodes without and with interfacial layers

    SciTech Connect

    Platen, W.; Schmutzler, H.; Kohl, D.; Brauchle, K.; Wolter, K.

    1988-07-01

    GaAs(110) faces with different preparations: ultrahigh vacuum (UHV) cleaved, polished and etched, polished and sputtered: are prepared as Schottky diodes by the deposition of Ag. Diodes based on UHV-cleaved faces do show homogeneously distributed EL2 and EL5 states in deep level transient spectroscopy (DLTS). On polished and etched samples an additional interface state (IS) distribution with a density of 9 x 10/sup 11/ eV/sup -1/ cm/sup -2/ at the DLTS maximum appears. These states can be caused by defects at the oxidic interfacial layer. Polishing and sputtering also evokes the IS distribution. The absence of a DLTS signal from metal-induced gap states (MIGS) which pin the Fermi level at 0.49 eV above the valence-band maximum is related to the absence of an interfacial layer in the UHV prepared Schottky diodes. The sputter process increases the electron density in a thin layer below the interface by an As excess. The corresponding smaller extent of the barrier causes an additional electron emission via tunneling processes from the IS distribution. Furthermore, a near-interface state, EL6 (V/sub Ga/-V/sub As/), shows up. Its concentration at the interface attains N/sub EL6/ = 2.5 x 10/sup 16/ cm/sup -3/ comparable to the shallow donor concentration.

  14. Adherence of sputtered titanium carbides

    NASA Technical Reports Server (NTRS)

    Brainard, W. A.; Wheeler, D. R.

    1979-01-01

    The study searches for interface treatment that would increase the adhesion of TiC coating to nickel- and titanium-base alloys. Rene 41 (19 wt percent Cr, 11 wt percent Mo, 3 wt percent Ti, balance Ni) and Ti-6Al-4V (6 wt percent Al, 4 wt percent V, balance Ti) are considered. Adhesion of the coatings is evaluated in pin-and disk friction tests. The coatings and interface regions are examined by X-ray photoelectron spectroscopy. Results suggest that sputtered refractory compound coatings adhere best when a mixed compound of coating and substrate metals is formed in the interfacial region. The most effective type of refractory compound interface appears to depend on both substrate and coating material. A combination of metallic interlayer deposition and mixed compound interface formation may be more effective for some substrate coating combinations than either alone.

  15. Detection of sputtered metastable atoms by autoionization

    SciTech Connect

    Wucher, A.; Berthold, W.; Oechsner, H.; Franzreb, K.

    1994-03-01

    We report on a scheme for the detection of sputter-generated metastable atoms that is based on the resonant excitation of an autoionizing state by single-photon absorption from a tunable laser. Using this technique, sputtered silver atoms ejected in the metastable 4{ital d}{sup 9}5{ital s}{sup 2}{ital D}{sub 5/2} state with an excitation energy of 3.75 eV have been detected. This represents the highest excitation energy of sputtered metastable atoms observed so far.

  16. Photovoltaic module bypass diode encapsulation

    NASA Technical Reports Server (NTRS)

    Shepard, N. J., Jr.

    1983-01-01

    The design and processing techniques necessary to incorporate bypass diodes within the module encapsulant are presented. The Semicon PN junction diode cells were selected. Diode junction to heat spreader thermal resistance measurements, performed on a variety of mounted diode chip types and sizes, have yielded values which are consistently below 1 deg C per watt, but show some instability when thermally cycled over the temperature range from -40 to 150 deg C. Three representative experimental modules, each incorporating integral bypass diode/heat spreader assemblies of various sizes, were designed. Thermal testing of these modules enabled the formulation of a recommended heat spreader plate sizing relationship. The production cost of three encapsulated bypass diode/heat spreader assemblies were compared with similarly rated externally mounted packaged diodes. It is concluded that, when proper designed and installed, these bypass diode devices will improve the overall reliability of a terrestrial array over a 20 year design lifetime.

  17. Diode Laser Arrays

    NASA Astrophysics Data System (ADS)

    Botez, Dan; Scifres, Don R.

    2005-11-01

    Contributors; 1. Monolithic phase-locked semiconductor laser arrays D. Botez; 2. High power coherent, semiconductor laser master oscillator power amplifiers and amplifier arrays D. F. Welch and D. G. Mehuys; 3. Microoptical components applied to incoherent and coherent laser arrays J. R. Leger; 4. Modeling of diode laser arrays G. R. Hadley; 5. Dynamics of coherent semiconductor laser arrays H. G. Winfuland and R. K. Defreez; 6. High average power semiconductor laser arrays and laser array packaging with an emphasis for pumping solid state lasers R. Solarz; 7. High power diode laser arrays and their reliability D. R. Scifres and H. H. Kung; 8. Strained layer quantum well heterostructure laser arrays J. J. Coleman; 9. Vertical cavity surface emitting laser arrays C. J. Chang-Hasnain; 10. Individually addressed arrays of diode lasers D. Carlin.

  18. Dual function conducting polymer diodes

    DOEpatents

    Heeger, Alan J.; Yu, Gang

    1996-01-01

    Dual function diodes based on conjugated organic polymer active layers are disclosed. When positively biased the diodes function as light emitters. When negatively biased they are highly efficient photodiodes. Methods of preparation and use of these diodes in displays and input/output devices are also disclosed.

  19. Heavy particle transport in sputtering systems

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  20. Sputtering of sodium on the planet Mercury

    NASA Technical Reports Server (NTRS)

    Mcgrath, M. A.; Johnson, R. E.; Lanzerotti, L. J.

    1986-01-01

    It is shown here that ion sputtering cannot account for the observed neutral sodium vapor column density on Mercury, but that it is an important loss mechanism for Na. Photons are likely to be the dominant stimulus, both directly through photodesorption and indirectly through thermal desorption of absorbed Na. It is concluded that the atmosphere produced is characterized by the planet's surface temperature, with the ion-sputtered Na contributing to a lesser, but more extended, component of the atmosphere.

  1. Anisotropy of sapphire single crystal sputtering

    SciTech Connect

    Minnebaev, K. F.; Tolpin, K. A.; Yurasova, V. E.

    2015-08-15

    We have studied the spatial distribution of particles sputtered from the base (0001) plane of a sapphire single crystal with trigonal crystalline lattice (α-Al{sub 2}O{sub 3}) that can be considered a superposition of two hexagonal close packed (hcp) structures–the ideal sublattice of oxygen and a somewhat deformed sublattice of aluminum. It is established that the particles sputtered from the base plane of sapphire are predominantly deposited along the sides of an irregular hexagon with spots at its vertices. The patterns of spots have been also studied for sputtering of particles from the (0001) face of a zinc single crystal with the hcp lattice. The spots of sputtered Zn atoms are arranged at the vertices of concentric equilateral hexagons. In both cases, the observed anisotropy of sputtering is related to focused collisions (direct and assisted focusing) and the channeling process. The chemical composition of spots has been determined in various regions of sputtered sapphire deposition. The results are discussed in comparison to analogous earlier data for secondary ion emission from an α-Al{sub 2}O{sub 3} single crystal.

  2. MD simulation of cluster formation during sputtering

    NASA Astrophysics Data System (ADS)

    Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

    2001-06-01

    The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Yn∝ nδ and Yn is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ˜ -3 for larger yield.

  3. High power impulse magnetron sputtering discharge

    SciTech Connect

    Gudmundsson, J. T.; Brenning, N.; Lundin, D.; Helmersson, U.

    2012-05-15

    The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma based sputtering technology. In HiPIMS, high power is applied to the magnetron target in unipolar pulses at low duty cycle and low repetition frequency while keeping the average power about 2 orders of magnitude lower than the peak power. This results in a high plasma density, and high ionization fraction of the sputtered vapor, which allows better control of the film growth by controlling the energy and direction of the deposition species. This is a significant advantage over conventional dc magnetron sputtering where the sputtered vapor consists mainly of neutral species. The HiPIMS discharge is now an established ionized physical vapor deposition technique, which is easily scalable and has been successfully introduced into various industrial applications. The authors give an overview of the development of the HiPIMS discharge, and the underlying mechanisms that dictate the discharge properties. First, an introduction to the magnetron sputtering discharge and its various configurations and modifications is given. Then the development and properties of the high power pulsed power supply are discussed, followed by an overview of the measured plasma parameters in the HiPIMS discharge, the electron energy and density, the ion energy, ion flux and plasma composition, and a discussion on the deposition rate. Finally, some of the models that have been developed to gain understanding of the discharge processes are reviewed, including the phenomenological material pathway model, and the ionization region model.

  4. The lunar exosphere: The sputtering contribution

    NASA Astrophysics Data System (ADS)

    Wurz, P.; Rohner, U.; Whitby, J. A.; Kolb, C.; Lammer, H.; Dobnikar, P.; Martín-Fernández, J. A.

    2007-11-01

    We have extended our Monte Carlo model of exospheres [Wurz, P., Lammer, H., 2003. Icarus 164 (1), 1-13] by treating the ion-induced sputtering process from a known surface in a self-consistent way. The comparison of the calculated exospheric densities with experimental data, which are mostly upper limits, shows that all of our calculated densities are within the measurement limits. The total calculated exospheric density at the lunar surface of about 1×10 m as result of solar wind sputtering we find is much less than the experimental total exospheric density of about 10 m. We conclude that sputtering contributes only a small fraction of the total exosphere, at least close to the surface. Because of the considerably larger scale height of atoms released via sputtering into the exosphere, sputtered atoms start to dominate the exosphere at altitudes exceeding a few 1000 km, with the exception of some light and abundant species released thermally, e.g. H 2, He, CH 4, and OH. Furthermore, for more refractory species such as calcium, our model indicates that sputtering may well be the dominant mechanism responsible for the lunar atmospheric inventory, but observational data does not yet allow firm conclusions to be drawn.

  5. Silicon Carbide Schottky Barrier Diode

    NASA Technical Reports Server (NTRS)

    Zhao, Jian H.; Sheng, Kuang; Lebron-Velilla, Ramon C.

    2004-01-01

    This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

  6. Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering

    NASA Astrophysics Data System (ADS)

    Otsuka, Shintaro; Mori, Takahiro; Morita, Yukinori; Uchida, Noriyuki; Liu, Yongxun; O’uchi, Shin-ichi; Fuketa, Hiroshi; Migita, Shinji; Masahara, Meishoku; Matsukawa, Takashi

    2017-04-01

    We structurally and electrically characterize sub-10-nm-thick heteroepitaxial Ge films on Si(001), formed by heated sputtering and subsequent rapid thermal annealing (RTA). After RTA treatment at 720 °C, we find the heteroepitaxial Ge films to have smooth surfaces with a roughness root mean square value of 0.54 nm. Raman measurement reveals that the 720 °C RTA improves the crystallinity of Ge films while maintaining abrupt Ge/Si interfaces. Cross-sectional transmission electron microscopy confirms that the 720 °C RTA step effectively reduces stacking faults and dislocations in the Ge films. The Richardson plot of the TaN/Ge/n-Si diode indicates a Schottky barrier height (SBH) of 0.33 V, which is close to the height of 0.37 V measured from the capacitance–voltage measurement. These values are reasonable compared with the reported SBH of the TaN/bulk Ge Schottky barrier diode, indicating that the method involving heated sputtering and subsequent RTA provides adequate thin Ge films for Ge/Si heterostructures.

  7. Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Lee, Kang-Yeon; Choi, Gwon-Woo; Kim, Yong-Jae; Choi, Youn-Ok; Kim, Nam-Oh

    2012-02-01

    Indium-tin-oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. ITO thin films have found many applications in anti-static coatings, thermal heaters, solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), electroluminescent devices, sensors and organic light-emitting diodes (OLEDs). ITO thin films are generally fabricated by using various methods, such as spraying, chemical vapor deposition (CVD), evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this research, ITO films were grown on glass substrates by using a radio-frequency (RF) magnetron sputtering method. In order to achieve a high transmittance and a low resistivity, we examined the various film deposition conditions, such as substrate temperature, working pressure, annealing temperature, and deposition time. Next, in order to improve the surface quality of the ITO thin films, we performed a chemical mechanical polishing (CMP) with different process parameters and compared the electrical and the optical properties of the polished ITO thin films. The best CMP conditions with a high removal rate, low nonuniformity, low resistivity and high transmittance were as follows: platen speed, head speed, polishing time, and slurry flow rate of 30 rpm, 30 rpm, 60 sec, and 60 ml/min, respectively.

  8. Analysis of surface sputtering on a quantum statistical basis

    NASA Technical Reports Server (NTRS)

    Wilhelm, H. E.

    1975-01-01

    Surface sputtering is explained theoretically by means of a 3-body sputtering mechanism involving the ion and two surface atoms of the solid. By means of quantum-statistical mechanics, a formula for the sputtering ratio S(E) is derived from first principles. The theoretical sputtering rate S(E) was found experimentally to be proportional to the square of the difference between incident ion energy and the threshold energy for sputtering of surface atoms at low ion energies. Extrapolation of the theoretical sputtering formula to larger ion energies indicates that S(E) reaches a saturation value and finally decreases at high ion energies. The theoretical sputtering ratios S(E) for wolfram, tantalum, and molybdenum are compared with the corresponding experimental sputtering curves in the low energy region from threshold sputtering energy to 120 eV above the respective threshold energy. Theory and experiment are shown to be in good agreement.

  9. Low-energy sputterings with the Monte Carlo Program ACAT

    NASA Astrophysics Data System (ADS)

    Yamamura, Y.; Mizuno, Y.

    1985-05-01

    The Monte Carlo program ACAT was developed to determine the total sputtering yields and angular distributions of sputtered atoms in physical processes. From computer results of the incident-energy dependent sputterings for various ion-target combinations the mass-ratio dependence and the bombarding-angle dependence of sputtering thresholds was obtained with the help of the Matsunami empirical formula for sputtering yields. The mass-ratio dependence of sputtering thresholds is in good agreement with recent theoretical results. The threshold energy of light-ion sputtering is a slightly increasing function of angle of incidence, while that of heavy-ion sputtering has a minimum value near theta = 60 deg. The angular distributions of sputtered atoms are also calculated for heavy ions, medium ions, and light ions, and reasonable agreements between calculated angular distributions and experimental results are obtained.

  10. Sputtering - A vacuum deposition method for coating material.

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

  11. Molecular dynamics investigation of hexagonal boron nitride sputtering and sputtered particle characteristics

    NASA Astrophysics Data System (ADS)

    Smith, Brandon D.; Boyd, Iain D.

    2016-08-01

    The sputtering of hexagonal boron nitride (h-BN) by impacts of energetic xenon ions is investigated using a molecular dynamics (MD) model. The model is implemented within an open-source MD framework that utilizes graphics processing units to accelerate its calculations, allowing the sputtering process to be studied in much greater detail than has been feasible in the past. Integrated sputter yields are computed over a range of ion energies from 20 eV to 300 eV, and incidence angles from 0° to 75°. Sputtering of boron is shown to occur at energies as low as 40 eV at normal incidence, and sputtering of nitrogen at as low as 30 eV at normal incidence, suggesting a threshold energy between 20 eV and 40 eV. The sputter yields at 0° incidence are compared to existing experimental data and are shown to agree well over the range of ion energies investigated. The semi-empirical Bohdansky curve and an empirical exponential function are fit to the data at normal incidence, and the threshold energy for sputtering is calculated from the Bohdansky curve fit as 35 ± 2 eV. These results are shown to compare well with experimental observations that the threshold energy lies between 20 eV and 40 eV. It is demonstrated that h-BN sputters predominantly as atomic boron and diatomic nitrogen, and the velocity distribution function (VDF) of sputtered boron atoms is investigated. The calculated VDFs are found to reproduce the Sigmund-Thompson distribution predicted by Sigmund's linear cascade theory of sputtering. The average surface binding energy computed from Sigmund-Thompson curve fits is found to be 4.5 eV for ion energies of 100 eV and greater. This compares well to the value of 4.8 eV determined from independent experiments.

  12. Process for preparing schottky diode contacts with predetermined barrier heights

    DOEpatents

    Chang, Y. Austin; Jan, Chia-Hong; Chen, Chia-Ping

    1996-01-01

    A process is provided for producing a Schottky diode having a preselected barrier height .phi..sub.Bn. The substrate is preferably n-GaAs, the metallic contact is derived from a starting alloy of the Formula [.SIGMA.M.sub..delta. ](Al.sub.x Ga.sub.1-x) wherein: .SIGMA.M is a moiety which consists of at least one M, and when more than one M is present, each M is different, M is a Group VIII metal selected from the group consisting of nickel, cobalt, ruthenium, rhodium, indium and platinum, .delta. is a stoichiometric coefficient whose total value in any given .SIGMA.M moiety is 1, and x is a positive number between 0 and 1 (that is, x ranges from greater than 0 to less than 1). Also, the starting alloy is capable of forming with the substrate a two phase equilibrium reciprocal system of the binary alloy mixture [.SIGMA.M.sub..delta. ]Ga-[.SIGMA.M.sub..delta. ]Al-AlAs-GaAs. When members of an alloy subclass within this Formula are each preliminarily correlated with the barrier height .phi..sub.Bn of a contact producable therewith, then Schottky diodes of predetermined barrier heights are producable by sputtering and annealing. Further provided are the product Schottky diodes that are produced according to this process.

  13. Sputtering of Lunar Regolith by Solar Wind Protons and Heavy Ions, and General Aspects of Potential Sputtering

    NASA Technical Reports Server (NTRS)

    Alnussirat, S. T.; Sabra, M. S.; Barghouty, A. F.; Rickman, Douglas L.; Meyer, F.

    2014-01-01

    New simulation results for the sputtering of lunar soil surface by solar-wind protons and heavy ions will be presented. Previous simulation results showed that the sputtering process has significant effects and plays an important role in changing the surface chemical composition, setting the erosion rate and the sputtering process timescale. In this new work and in light of recent data, we briefly present some theoretical models which have been developed to describe the sputtering process and compare their results with recent calculation to investigate and differentiate the roles and the contributions of potential (or electrodynamic) sputtering from the standard (or kinetic) sputtering.

  14. Infrared diode laser spectroscopy

    NASA Astrophysics Data System (ADS)

    Civiš, S.; Cihelka, J.; Matulková, I.

    2010-12-01

    Three types of lasers (double-heterostructure 66 K InAsSb/InAsSbP laser diode, room temperature, multi quantum wells with distributed feedback (MQW with DFB) (GaInAsSb/AlGaAsSb based) diode laser and vertical cavity surface emitting lasers (VCSELs) (GaSb based) have been characterized using Fourier transform emission spectroscopy and compared. The photoacoustic technique was employed to determine the detection limit of formaldehyde (less than 1 ppmV) for the strongest absorption line of the v3 + v5 band in the emission region of the GaInAsSb/AlGaAsSb diode laser. The detection limit (less than 10 ppbV) of formaldehyde was achieved in the 2820 cm-1 spectral range in case of InAsSb/InAsSbP laser (fundamental bands of v1, v5). Laser sensitive detection (laser absorption together with high resolution Fourier transform infrared technique including direct laser linewidth measurement, infrared photoacoustic detection of neutral molecules (methane, form-aldehyde) is discussed. Additionally, very sensitive laser absorption techniques of such velocity modulation are discussed for case of laser application in laboratory research of molecular ions. Such sensitive techniques (originally developed for lasers) contributed very much in identifying laboratory microwave spectra of a series of anions (C6H-, C4H-, C2H-, CN-) and their discovery in the interstellar space (C6H-, C4H-).

  15. Perforated diode neutron sensors

    NASA Astrophysics Data System (ADS)

    McNeil, Walter J.

    A novel design of neutron sensor was investigated and developed. The perforated, or micro-structured, diode neutron sensor is a concept that has the potential to enhance neutron sensitivity of a common solid-state sensor configuration. The common thin-film coated diode neutron sensor is the only semiconductor-based neutron sensor that has proven feasible for commercial use. However, the thin-film coating restricts neutron counting efficiency and severely limits the usefulness of the sensor. This research has shown that the perforated design, when properly implemented, can increase the neutron counting efficiency by greater than a factor of 4. Methods developed in this work enable detectors to be fabricated to meet needs such as miniaturization, portability, ruggedness, and adaptability. The new detectors may be used for unique applications such as neutron imaging or the search for special nuclear materials. The research and developments described in the work include the successful fabrication of variant perforated diode neutron detector designs, general explanations of fundamental radiation detector design (with added focus on neutron detection and compactness), as well as descriptive theory and sensor design modeling useful in predicting performance of these unique solid-state radiation sensors. Several aspects in design, fabrication, and operational performance have been considered and tested including neutron counting efficiency, gamma-ray response, perforation shapes and depths, and silicon processing variations. Finally, the successfully proven technology was applied to a 1-dimensional neutron sensor array system.

  16. Sputtering of amorphous silicon nitride irradiated with energetic C60 ions: Preferential sputtering and synergy effect between electronic and collisional sputtering

    NASA Astrophysics Data System (ADS)

    Kitayama, T.; Morita, Y.; Nakajima, K.; Narumi, K.; Saitoh, Y.; Matsuda, M.; Sataka, M.; Toulemonde, M.; Kimura, K.

    2015-12-01

    Amorphous silicon nitride films (thickness 30 nm) deposited on Si(0 0 1) were irradiated with 30-1080 keV C60 and 100 MeV Xe ions to fluences ranging from 2 × 1011 to 1 × 1014 ions/cm2. The composition depth profiles of the irradiated samples were measured using high-resolution Rutherford backscattering spectrometry. The sputtering yields were estimated from the derived composition profiles. Pronounced preferential sputtering of nitrogen was observed in the electronic energy loss regime. In addition, a large synergy effect between the electronic and collisional sputtering was also observed. The sputtering yields were calculated using the unified thermal spike model to understand the observed results. Although the calculated results reproduced the observed total sputtering yields with a lowered sublimation energy, the observed preferential sputtering of nitrogen could not be explained. The present results suggest an additional sputtering mechanism related to the electronic energy loss.

  17. Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

    PubMed

    Eom, Ji Mi; Oh, Hyun Gon; Cho, Il Hwan; Kwon, Sang Jik; Cho, Eou Sik

    2013-11-01

    Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.0 micros at the fixed frequency of 200 kHz. From the structural and optical characteristics of the sputtered NbOx films, it was possible to obtain more uniform and coherent NbOx films in case of the higher reverse voltage time as a result of the cleaning effect on the Nb2O5 target surface. The electrical characteristics from the metal-insulator-semiconductor (MIS) fabricated with the NbOx films shows the leakage currents are influenced by the reverse voltage time and the Schottky barrier diode characteristics.

  18. Solar Wind Sputtering of Lunar Surface Materials: Role and Some Possible Implications of Potential Sputtering

    NASA Technical Reports Server (NTRS)

    Barghouty, A. F.; Adams, J. H., Jr.; Meyer, F.; Reinhold, c.

    2010-01-01

    Solar-wind induced sputtering of the lunar surface includes, in principle, both kinetic and potential sputtering. The role of the latter mechanism, however, in many focused studies has not been properly ascertained due partly to lack of data but can also be attributed to the assertion that the contribution of solar-wind heavy ions to the total sputtering is quite low due to their low number density compared to solar-wind protons. Limited laboratory measurements show marked enhancements in the sputter yields of slow-moving, highly-charged ions impacting oxides. Lunar surface sputtering yields are important as they affect, e.g., estimates of the compositional changes in the lunar surface, its erosion rate, as well as its contribution to the exosphere as well as estimates of hydrogen and water contents. Since the typical range of solar-wind ions at 1 keV/amu is comparable to the thickness of the amorphous rim found on lunar soil grains, i.e. few 10s nm, lunar simulant samples JSC-1A AGGL are specifically enhanced to have such rims in addition to the other known characteristics of the actual lunar soil particles. However, most, if not all laboratory studies of potential sputtering were carried out in single crystal targets, quite different from the rim s amorphous structure. The effect of this structural difference on the extent of potential sputtering has not, to our knowledge, been investigated to date.

  19. A Fast Method of Fully Characterizing Sputtering Angular Dependence (Preprint)

    DTIC Science & Technology

    2008-06-17

    A new method has been demonstrated in which a single experiment is used to fully define the sputtering angular dependence of a given material. The...profilometry; the full sputtering angular dependence curve is then extracted using a numerical approach.

  20. Physical sputtering of metallic systems by charged-particle impact

    SciTech Connect

    Lam, N.Q.

    1989-12-01

    The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs.

  1. Possible isotopic fractionation effects in sputtered minerals

    NASA Technical Reports Server (NTRS)

    Haff, P. K.; Watson, C. C.; Tombrello, T. A.

    1980-01-01

    A model which makes definite predictions for the fractionation of isotopes in sputtered material is discussed. The fractionation patterns are nonlinear, and the pattern for a particular set of isotopes depends on the chemical matrix within which those isotopes are contained. Calculations are presented for all nonmonoisotopic elements contained in the minerals perovskite, anorthite, ackermanite, enstatite, and troilite. All isotopes are fractionated at the level of approximately 4-6 deg/o per atomic mass unit. Oxygen is always positively fractionated (heavier isotopes sputtered preferentially), and heavier elements are generally negatively fractioned (light isotopes sputtered preferentially). The value of Delta (O-18:O-16) is always less by about 1.8 deg/o than a linear extrapolation based upon the calculated delta (O-17:O-16) value would suggest. The phenomenon of both negative and positive fractionation patterns from a single target mineral are used to make an experimental test of the proposed model.

  2. Cryogenic thermal diode heat pipes

    NASA Technical Reports Server (NTRS)

    Alario, J.

    1979-01-01

    The development of spiral artery cryogenic thermal diode heat pipes was continued. Ethane was the working fluid and stainless steel the heat pipe material in all cases. The major tasks included: (1) building a liquid blockage (blocking orifice) thermal diode suitable for the HEPP space flight experiment; (2) building a liquid trap thermal diode engineering model; (3) retesting the original liquid blockage engineering model, and (4) investigating the startup dynamics of artery cryogenic thermal diodes. An experimental investigation was also conducted into the wetting characteristics of ethane/stainless steel systems using a specially constructed chamber that permitted in situ observations.

  3. Intergalactic medium metal enrichment through dust sputtering

    NASA Astrophysics Data System (ADS)

    Bianchi, Simone; Ferrara, Andrea

    2005-04-01

    We study the motion of dust grains into the intergalactic medium (IGM) around redshift z= 3, to test the hypothesis that grains can efficiently pollute the gas with metals through sputtering. We use the results available in the literature for radiation-driven dust ejection from galaxies as initial conditions and follow the motion onwards. Via this mechanism, grains are ejected into the IGM with velocities >100 km s-1 as they move supersonically, grains can be efficiently eroded by non-thermal sputtering. However, Coulomb and collisional drag forces effectively reduce the charged grain velocity. Up-to-date sputtering yields for graphite and silicate (olivine) grains have been derived using the code TRANSPORT OF IONS IN MATTER (TRIM), for which we provide analytic fits. After training our method on a homogeneous density case, we analyse the grain motion and sputtering in the IGM density field as derived from a Λ cold dark matter (CDM) cosmological simulation at z= 3.27. We found that only large (a>~ 0.1μm) grains can travel up to considerable distances (few ×100 kpc physical) before being stopped. Resulting metallicities show a well-defined trend with overdensity δ. The maximum metallicities are reached for 10 < δ < 100[corresponding to systems, in quasi-stellar object (QSO) absorption spectra, with 14.5 < log N(HI) < 16]. However the distribution of sputtered metals is very inhomogeneous, with only a small fraction of the IGM volume polluted by dust sputtering (filling factors of 18 per cent for Si and 6 per cent for C). For the adopted size distribution, grains are never completely destroyed; nevertheless, the extinction and gas photoelectric heating effects resulting from this population of intergalactic grains are well below current detection limits.

  4. Ion beam sputter etching and deposition of fluoropolymers

    NASA Technical Reports Server (NTRS)

    Banks, B. A.; Sovey, J. S.; Miller, T. B.; Crandall, K. S.

    1978-01-01

    Fluoropolymer etching and deposition techniques including thermal evaporation, RF sputtering, plasma polymerization, and ion beam sputtering are reviewed. Etching and deposition mechanism and material characteristics are discussed. Ion beam sputter etch rates for polytetrafluoroethylene (PTFE) were determined as a function of ion energy, current density and ion beam power density. Peel strengths were measured for epoxy bonds to various ion beam sputtered fluoropolymers. Coefficients of static and dynamic friction were measured for fluoropolymers deposited from ion bombarded PTFE.

  5. Sputtering Erosion in the Ion Thruster

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.; Mantenieks, Maris A. (Technical Monitor)

    2000-01-01

    During the first phase of this research, the sputtering yields of molybdenum by low energy (100 eV and higher) xenon ions were measured by using the methods of secondary neutral mass spectrometry (SNMS) and Rutherford backscattering spectrometry (RBS). However, the measured sputtering yields were found to be far too low to explain the sputtering erosions observed in the long-duration tests of ion thrusters. The only difference between the sputtering yield measurement experiments and the ion thruster tests was that the later are conducted at high ion fluences. Hence, a study was initiated to investigate if any linkage exists between high ion fluence and an enhanced sputtering yield. The objective of this research is to gain an understanding of the causes of the discrepancies between the sputtering rates of molybdenum grids in an ion thruster and those measured from our experiments. We are developing a molecular dynamics simulation technique for studying low-energy xenon ion interactions with molybdenum. It is difficult to determine collision sequences analytically for primary ions below the 200 eV energy range where the ion energy is too low to be able to employ a random cascade model with confidence and it is too high to have to consider only single collision at or near the surface. At these low energies, the range of primary ions is about 1 to 2 nm from the surface and it takes less than 4 collisions on the average to get an ion to degrade to such an energy that it can no longer migrate. The fine details of atomic motion during the sputtering process are revealed through computer simulation schemes. By using an appropriate interatomic potential, the positions and velocities of the incident ion together with a sufficient number of target atoms are determined in small time steps. Hence, it allows one to study the evolution of damages in the target and its effect on the sputtering yield. We are at the preliminary stages of setting up the simulation program.

  6. Carbonaceous Particles Production in a Sputtering Discharge

    SciTech Connect

    Dominique, Claire; Sant, Marco; Arnas, Cecile

    2005-10-31

    Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms.

  7. Method of sputter etching a surface

    DOEpatents

    Henager, Jr., Charles H.

    1984-01-01

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion.

  8. Method of sputter etching a surface

    DOEpatents

    Henager, C.H. Jr.

    1984-02-14

    The surface of a target is textured by co-sputter etching the target surface with a seed material adjacent thereto, while the target surface is maintained at a pre-selected temperature. By pre-selecting the temperature of the surface while sputter etching, it is possible to predetermine the reflectance properties of the etched surface. The surface may be textured to absorb sunlight efficiently and have minimal emittance in the infrared region so as to be well-suited for use as a solar absorber for photothermal energy conversion. 4 figs.

  9. Photonometers for coating and sputtering machines

    NASA Astrophysics Data System (ADS)

    Oupický, P.; Jareš, D.; Václavík, J.; Vápenka, D.

    2013-04-01

    The concept of photonometers (alternative name of optical monitor of a vacuum deposition process) for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR) for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  10. On the target surface cleanness during magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Schelfhout, R.; Strijckmans, K.; Boydens, F.; Depla, D.

    2015-11-01

    The thickness of the chemisorbed oxide layer on a tantalum target surface was determined from sputter cleaning experiments. These measurements show a clear logarithmic growth behaviour as a function of the oxygen exposure. By extrapolating this result towards other sputter conditions, the target cleanness during magnetron sputter deposition can be estimated.

  11. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, M.A.; Alford, C.S.; Makowiecki, D.M.; Chen, C.W.

    1994-02-08

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface. 2 figures.

  12. Method of making segmented pyrolytic graphite sputtering targets

    DOEpatents

    McKernan, Mark A.; Alford, Craig S.; Makowiecki, Daniel M.; Chen, Chih-Wen

    1994-01-01

    Anisotropic pyrolytic graphite wafers are oriented and bonded together such that the graphite's high thermal conductivity planes are maximized along the back surface of the segmented pyrolytic graphite target to allow for optimum heat conduction away from the sputter target's sputtering surface and to allow for maximum energy transmission from the target's sputtering surface.

  13. Cross-Field Differences in Creative Problem-Solving Skills: A Comparison of Health, Biological, and Social Sciences

    PubMed Central

    Mumford, Michael D.; Antes, Alison L.; Caughron, Jared J.; Connelly, Shane; Beeler, Cheryl

    2010-01-01

    In the present study, 258 doctoral students working in the health, biological, and social sciences were asked to solve a series of field-relevant problems calling for creative thought. Proposed solutions to these problems were scored with respect to critical creative thinking skills such as problem definition, conceptual combination, and idea generation. Results indicated that health, biological, and social scientists differed with respect to their skill in executing various operations, or processes, involved in creative thought. Interestingly, no differences were observed as a function of the students’ level of experience. The implications of these findings for understanding cross-field, and cross-experience level, differences in creative thought are discussed. PMID:20936085

  14. Influence of crossed fields in structures combining large grain, bulk (RE)BCO superconductors and soft ferromagnetic discs

    NASA Astrophysics Data System (ADS)

    Philippe, M. P.; Fagnard, J. F.; Wéra, L.; Morita, M.; Nariki, S.; Teshima, H.; Caps, H.; Vanderheyden, B.; Vanderbemden, P.

    2016-03-01

    Bulk (RE)BCO superconductors are able to trap record magnetic fields and can be used as powerful permanent magnets in various engineering applications such as rotating machines and magnetic bearings. When such superconducting (SC) “trapped field magnets” are combined to a ferromagnetic (FM) disc, the total magnetic moment is increased with respect to that of the superconductor alone. In the present work, we study experimentally the magnetic behaviour of such hybrid FM/SC structures when they are subjected to cycles of applied field that are orthogonal to their permanent magnetization, i.e. a “crossed-field” configuration. Experimental results show that the usual “crossed-field demagnetization” caused by the cycles of transverse field is strongly reduced in the presence of the ferromagnet.

  15. Cylindrical electron beam diode

    DOEpatents

    Bolduc, Paul E.

    1976-01-01

    A diode discharge device may include a tubular anode concentrically encircled by and spaced from a tubular cathode electrode with ends intermediate the ends of said anode electrode, and a metal conductive housing having a tubular wall disposed around the cathode electrode with end walls connected to the anode electrode. High energy electron current coupling is through an opening in the housing tubular wall to a portion of the cathode electrode intermediate its ends. Suitable utilization means may be within the anode electrode at positions to be irradiated by electrons emitted from the cathode electrode and transmitted through the anode walls.

  16. Effect of sputtering power on the growth of Ru films deposited by magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Jhanwar, Prachi; Kumar, Arvind; Verma, Seema; Rangra, K. J.

    2016-04-01

    Ruthenium is deposited by DC magnetron sputtering at different powers and is characterized. The effect of sputtering power on the electrical and structural properties of the film is investigated experimentally. High resolution X-ray diffraction is used to characterize the microstructure of Ru films deposited on SiO2 surface. The peak (002) is more sharp and intense with full width at half maximum (FWHM) of 0.37° at 250W. The grain size increases with increase in sputtering power improving the crystallinity of the film. The film deposited at high sputtering power also showed lower resistivity (12.40 µΩ-cm) and higher mobility (4.82 cm2/V.s) as compared to the film deposited at low power. The surface morphology of the film is studied by atomic force microscopy (AFM).

  17. JANTX1N3893 diode

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Diodes manufactured by Siemens and Motorola were tested. Testing of Motorola diodes was stopped in all 3 groups because 50% failure-rate limit was reached. Siemens lot endured more testing in groups 1 and 2 and completed testing on group 3. Failure analysis was performed for group 2 testing.

  18. Infrared hot carrier diode mixer.

    PubMed

    Aukerman, L W; Erler, J W

    1977-11-01

    Detection of a 54.3-GHz beatnote at 10.6 microm has been observed with a hot carrier diode mixer. The diode consists of a "cat whisker" antenna, which forms an ohmic point contact to n-InAs. The mechanism of this room-temperature detector is described as the "thermoelectric effect" of hot carriers.

  19. RF Sputtering of Gold Contacts On Niobium

    NASA Technical Reports Server (NTRS)

    Barr, D. W.

    1983-01-01

    Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

  20. Continuous Sputter Deposition Coating of Long Monofilaments

    DTIC Science & Technology

    2014-04-01

    terminal. A length of fishing line, microtubing, or polylactic acid (PLA) coated with copper could be left to cure within an epoxy, and upon removal...inductance, capacitance, resistance min minute MSD magnetron sputter deposition PLA polylactic acid RPM revolutions per minute R resistance (units

  1. Reactive high power impulse magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Gudmundsson, J. T.; Magnus, F.; Tryggvason, T. K.; Sveinsson, O. B.; Olafsson, S.

    2012-10-01

    Here we discuss reactive high power impulse magnetron sputtering sputtering (HiPIMS) [1] of Ti target in an Ar/N2 and Ar/O2 atmosphere. The discharge current waveform is highly dependent on both the pulse repetition frequency and discharge voltage. The discharge current increases with decreasing frequency or voltage. This we attribute to an increase in the secondary electron emission yield during the self-sputtering phase of the pulse, as nitride [2] or oxide [3] forms on the target. We also discuss the growth of TiN films on SiO2 at temperatures of 22-600 ^oC. The HiPIMS process produces denser films at lower growth temperature and the surface is much smoother and have a significantly lower resistivity than dc magnetron sputtered films on SiO2 at all growth temperatures due to reduced grain boundary scattering [4].[4pt] [1] J. T. Gudmundsson, N. Brenning, D. Lundin and U. Helmersson, J. Vac. Sci. Technol. A, 30 030801 (2012)[0pt] [2] F. Magnus, O. B. Sveinsson, S. Olafsson and J. T. Gudmundsson, J. Appl. Phys., 110 083306 (2011)[0pt] [3] F. Magnus, T. K. Tryggvason, S. Olafsson and J. T. Gudmundsson, J. Vac. Sci. Technol., submitted 2012[0pt] [4] F. Magnus, A. S. Ingason, S. Olafsson and J. T. Gudmundsson, IEEE Elec. Dev. Lett., accepted 2012

  2. Research on Sputtering of Ferroelectric Thin Films

    DTIC Science & Technology

    1990-02-01

    and d1,5 coefficients as a function of composition in the PbNb 2 06-BaNb2O6 system. Fig. 4 Schematic representation of the sputter coating process. Fig...and photochromic 2 activities, and promises excellent optoelectronic properties. There have been numerous concepts for its application in elec- tronic

  3. Inverse I-V Injection Characteristics of ZnO Nanoparticle-Based Diodes.

    PubMed

    Mundt, Paul; Vogel, Stefan; Bonrad, Klaus; von Seggern, Heinz

    2016-08-10

    Simple Al/ZnO(NP)/Au diodes produced by spin coating of ZnO nanoparticle dispersions (ZnO(NP)) on Al/Al2O3 and Au substrates and subsequent Au deposition have been investigated to understand electron injection properties of more complex devices, incorporating ZnO(NP) as injection layer. Inverse I-V characteristics have been observed compared to conventional Al/ZnO(SP)/Au diodes produced by reactive ion sputtering of ZnO. SEM micrographs reveal that the void-containing contact of ZnO(NP) with the bottom Al electrode and the rough morphology of the top Au electrode are likely to be responsible for the observed injection and ejection probabilities of electrons. A simple tunneling model, incorporating the voids, explains the strongly reduced injection currents from Al whereas the top electrode fabricated by vapor deposition of Au onto the nanoparticle topology adopts the inverse ZnO(NP) morphology leading to enlarged injection areas combined with Au-tip landscapes. These tips in contrast to the smooth sputtered ZnO(SP) lead to electric field enhancement and strongly increased injection of electrons in reverse direction. The injected charge piles up at the barrier generated by voids between ZnO(NP) and the bottom electrode forcing a change in the barrier shape and therefore allowing for higher ejection rates. Both effects in combination explain the inverse I-V characteristic of nanoparticle based diodes.

  4. Pulsed dc self-sustained magnetron sputtering

    SciTech Connect

    Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

    2008-09-15

    The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of {approx}0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of {approx}560 W/cm{sup 2}. The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range

  5. Gallium phosphide high temperature diodes

    NASA Technical Reports Server (NTRS)

    Chaffin, R. J.; Dawson, L. R.

    1981-01-01

    High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

  6. Light Emitting Diode (LED)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

  7. Annealing of gold nanostructures sputtered on glass substrate

    NASA Astrophysics Data System (ADS)

    Švorčík, V.; Siegel, J.; Šutta, P.; Mistrík, J.; Janíček, P.; Worsch, P.; Kolská, Z.

    2011-03-01

    The effects of annealing at 300 °C on gold nanostructures sputtered onto glass substrate were studied using XRD, SAXSees, the Van der Pauw method and ellipsometry. As-sputtered and annealed samples exhibit a different dependence of the gold lattice parameter on the sputtering time. With increasing sputtering time the average thickness of the layer and the size of gold crystallites increased. Another rapid enlargement of the crystallites is observed after annealing. The volume resistivity decreases rapidly with the increasing sputtering time for both, as-deposited and annealed structures. With increasing sputtering time initially discontinuous gold coverage changes gradually in a continuous one. Electrically continuous gold coverage on the as-sputtered and annealed samples exhibits the same concentration of free charge carriers and Hall mobility. Optical constants of as-deposited and annealed gold films determined by ellipsometry support resistivity measurements and clearly manifest the presence of plasmons in discontinuous films.

  8. Sputtered Ta-Si-N diffusion barriers in Cu metallizations for Si

    NASA Technical Reports Server (NTRS)

    Kolawa, E.; Pokela, P. J.; Reid, J. S.; Chen, J. S.; Nicolet, Marc A.; Ruiz, R. P.

    1991-01-01

    Electrical measurements on shallow Si n+-p junction diodes with a 30-nm TiSi2 contacting layer demonstrate that an 80-nm-thick amorphous Ta36Si14N50 film prepared by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 plasma very effectively prevents the interaction between the Si substrate with the TiSi2 contacting layer and a 500-nm Cu overlayer. The Ta36Si14N50 diffusion barrier maintains the integrity of the I-V characteristics up to 900 C for 30-min annealing in vacuum. It is concluded that the amorphous Ta36Si14N50 alloy is not only a material with a very low reactivity for copper, titanium, and silicon, but must have a small diffusivity for copper as well.

  9. Nonepitaxial sputter synthesis of aligned strontium hexaferrite, SrOṡ6(Fe2O3), films

    NASA Astrophysics Data System (ADS)

    Hegde, H.; Samarasekara, P.; Cadieu, F. J.

    1994-05-01

    Films of strontium hexaferrite were synthesized through rf diode sputter deposition, nonepitaxially onto polycrystalline Al2O3 substrates. So far such films for the analogous Ba phase have been synthesized mostly through epitaxial growth onto suitably chosen matching substrates. Crystallization of the strontium hexaferrite phase was achieved for deposition temperatures as low as 500 °C. For nonepitaxially synthesized 2-3-μm-thick polycrystalline films, a fairly high degree of variable and controlled c-axis orientation of the crystallites has been obtained. The x-ray-diffraction traces of films with a strong c-axis in-plane alignment showed predominantly (110)-type reflections. The film coercivities were increased by postdeposition annealing in O2. The remnant to saturation flux density ratio of such in-plane anisotropy films for in-plane measurements was 0.62, with an in-plane coercivity ≊2.3 kOe.

  10. Nanofluidic osmotic diodes

    NASA Astrophysics Data System (ADS)

    Bocquet, Lyderic; Picallo, Clara; Gravelle, Simon; Joly, Laurent; Charlaix, Elisabeth

    2013-11-01

    Osmosis describes the flow of water across semipermeable membranes powered by the chemical free energy extracted from salinity gradients. While osmosis can be expressed in simple terms via the van't Hoff ideal gas formula for the osmotic pressure, it is a complex phenomenon taking its roots in the subtle interactions occurring at the scale of the membrane nanopores. Here we use new opportunities offered by nanofluidic systems to create an osmotic diode exhibiting asymmetric water flow under reversal of osmotic driving. We show that a surface charge asymmetry built on a nanochannel surface leads to non-linear couplings between water flow and the ion dynamics, which are capable of water flow rectification. This phenomenon opens new opportunities for water purification and complex flow control in nanochannels.

  11. Emitron: microwave diode

    DOEpatents

    Craig, G.D.; Pettibone, J.S.; Drobot, A.T.

    1982-05-06

    The invention comprises a new class of device, driven by electron or other charged particle flow, for producing coherent microwaves by utilizing the interaction of electromagnetic waves with electron flow in diodes not requiring an external magnetic field. Anode and cathode surfaces are electrically charged with respect to one another by electron flow, for example caused by a Marx bank voltage source or by other charged particle flow, for example by a high energy charged particle beam. This produces an electric field which stimulates an emitted electron beam to flow in the anode-cathode region. The emitted electrons are accelerated by the electric field and coherent microwaves are produced by the three dimensional spatial and temporal interaction of the accelerated electrons with geometrically allowed microwave modes which results in the bunching of the electrons and the pumping of at least one dominant microwave mode.

  12. White light emitting diodes

    NASA Astrophysics Data System (ADS)

    Baur, J.; Schlotter, P.; Schneider, J.

    Using blue-emitting GaN LEDs on SiC substrate chips as primary light sources, we have fabricated green, yellow, red and white light emitting diodes (LUCOLEDs). The generation of mixed colors, as turquoise and magenta, is also demonstrated. The underlying physical principle is that of luminescence downconversion (Stokes shift), as typical for organic dye molecules and many inorganic phosphors. For white light generation via the LUCOLED principle, the phosphor Y3Al5O12:Ce3+(4f1) is ideally suited. The optical characteristics of Ce3+(4f1) in Y3Al5O12(YAG) are discussed in detail. Possibilities to "tune" the white color by various substitutions in the garnet lattice are shortly outlined.

  13. Diode-like behavior of I-V curves of CoFe-(Al-O)/Si(100) granular thin films

    NASA Astrophysics Data System (ADS)

    Tuan Anh, Nguyen; Van Cuong, Giap; Anh Tuan, Nguyen

    2015-01-01

    In this study, the electrical performance of (Co70Fe30)x(Al-O)1-x (where x=0.1 and 0.3) granular thin films sputtered on Si(1 0 0) substrates, which were subsequently annealing at 350 °C for 1 h in vacuum, was investigated. The millimeter-sized samples were installed in an in-plane lateral Ag electrode configuration on the surface. The current-voltage (I-V) characteristics were measured in bias voltages of approximately ±7 V. The I-V curves demonstrated the so-called large Coulomb gaps and diode-like asymmetric behavior similar to a Zener diode-type rectification. This remarkable behavior was evaluated using the most suitable transport models. Results suggest that an effective magnetic diode could be fabricated from millimeter-sized magnetic granular thin films.

  14. Investigation of neutral and ion dynamics in a HiPIMS plasma by tunable laser diode absorption spectroscopy (TDLAS)

    NASA Astrophysics Data System (ADS)

    Preissing, Patrick; Hecimovic, Ante; von Keudell, Achim

    2016-09-01

    High power impulse magnetron sputtering (HiPIMS) discharges are known for complex plasma interactions, and complex temporal and spatial dynamics. Spatial and temporal dynamic of argon metastable (Arm), Ti atom (Ti0) and Ti ion (Ti+) density and temperature is studied by an extended tunable diode laser absorption spectroscopy setup (TDLAS) during a HiPIMS pulse. The TDLAS setup used a beam expander in combination with a 6 photo diode array to simultaneously measure spatial (resolution 5 mm) and time resolved absorption profiles of an Arm, Ti0 and Ti+ transition. This in combination with moving the magnetron in axial direction gives a complete 2D map of the density evolution. Temporal resolution of 400 ns was achieved by recording the photo diode signal on the National Instruments card. Final results allowed to investigate temporal evolution of the observed species in the volume between the target and the substrate.

  15. Laterally injected light-emitting diode and laser diode

    DOEpatents

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  16. Simulation studies on sputtering in rough surface

    NASA Astrophysics Data System (ADS)

    Kenmotsu, T.; Yamamura, Y.; Muramoto, T.; Hirotani, N.

    2005-01-01

    The influence of a surface roughness on sputtering is studied using a Monte Carlo simulation code ACAT. In order to estimate this influence in ACAT calculation, the ACAT code is modified. The two-dimensional fractal surface model is applied to the ACAT code and a surface binding energy of a target material is estimated by a many-body tight-binding potential. Simulation results calculated with the modified ACAT are compared with experimental data and the standard planar ACAT on sputtering yields of a Mo surface irradiated with 2 keV D+ ions. The modified ACAT code predicts well experimental data from rough surfaces compared with the standard planar ACAT code.

  17. Critical currents in sputtered copper molybdenum sulphide

    NASA Technical Reports Server (NTRS)

    Alterovitz, S. A.; Woollam, J. A.; Kammerdiner, L.; Luo, H.-L.

    1977-01-01

    Critical currents in a sputtered Chevrel-phase copper molybdenum sulfide have been measured at 4.2 K as a function of applied magnetic field. Self-field critical-current values up to 10 to the 9th A/sq m were found, decreasing to 10 to the 8th A/sq m at 3 T. Graphs of pinning forces versus field were found to be independent of field direction, and the pinning mechanism is sample independent. Critical-current densities for sputtered lead molybdenum sulphide are estimated to be about 10 to the 8th A/sq m at 26 T based on a scaling law for pinning.

  18. Comparative study of cross-field and field-aligned electron beams in active experiments. [in upper atmosphere

    NASA Technical Reports Server (NTRS)

    Winglee, R. M.; Pritchett, P. L.

    1988-01-01

    Beam-plasma interactions associated with the cross-field and field-aligned injection of electron beams from spacecraft were investigated using a two-dimensional (three velocity component) electrostatic particle simulations. It is shown that the beam properties and plasma response can be characterized well by the ratio between the stagnation time and the plasma response time, which depends on the ratio of the ambient plasma density to the beam density, the beam width, the beam energy, and the spacecraft length. It was found that the beams injected across the field lines tend to lose their coherence after about one or two gyrations due to space-charge oscillations induced by the beam, irrespective of the spacecraft charging. These oscillations scatter the beam electrons into a hollow cylinder of a radius equal to a beam electron gyroradius and thickness of the order of two beam Debye lengths. Parallel injected beams are subjected to similar oscillations, which cause the beam to expand to fill a solid cylinder of a comparable thickness.

  19. Direct measurements and modeling of gradient-aligned cross-field ion flows near an absorbing boundary

    NASA Astrophysics Data System (ADS)

    Thompson, D. S.; Siddiqui, M. Umair; McIlvain, J. S.; Short, Z. D.; Scime, E. E.; Aguirre, E. M.; Henriquez, M. F.; McKee, J. S.

    2015-11-01

    Direct measurements of cross-field ion transport near boundaries are sought for validating transport models in magnetically confined plasmas. Using laser-induced fluorescence, we measured ion flows normal to an absorbing boundary that was aligned to be parallel to a uniform axial magnetic field in a helicon plasma. We used Langmuir and emissive probes to measure local density, temperature and plasma potential profiles in the same region. We then scanned ion-neutral collisionality by varying the ratio of the ion gyro-radius, ρi, and ion-neutral collision length, λ, over the range 0.34 <=ρi / λ <= 1.60. Classical diffusion along density and potential gradients is sufficient to describe flow profiles for most cases but did not describe measurements well for 0.44 <=ρi / λ <= 0.65. In these cases, cross-sections ~3 times the classical prediction produced acceptable fits, and flow to the boundary was enhanced significantly. These enhanced flow cases exhibit spectra with low-frequency electrostatic fluctuations (f <10 kHz) that are not observed in data described well by a classical diffusion model. This work is supported by US National Science Foundation grant number PHY-1360278.

  20. The role of the density gradient on intermittent cross-field transport events in a simple magnetized toroidal plasma

    SciTech Connect

    Theiler, C.; Diallo, A.; Fasoli, A.; Furno, I.; Labit, B.; Ricci, P.; Podesta, M.; Poli, F. M.

    2008-04-15

    Intermittent cross-field particle transport events (ITEs) are studied in the basic toroidal device TORPEX [TORoidal Plasma EXperiment, A. Fasoli et al., Phys. Plasmas 13, 055902 (2006)], with focus on the role of the density gradient. ITEs are due to the intermittent radial elongation of an interchange mode. The elongating positive wave crests can break apart and form blobs. This is not necessary, however, for plasma particles to be convected a considerable distance across the magnetic field lines. Conditionally sampled data reveal two different scenarios leading to ITEs. In the first case, the interchange mode grows radially from a slab-like density profile and leads to the ITE. A novel analysis technique reveals a monotonic dependence between the vertically averaged inverse radial density scale length and the probability for a subsequent ITE. In the second case, the mode is already observed before the start of the ITE. It does not elongate radially in a first stage, but at a later time. It is shown that this elongation is preceded by a steepening of the density profile as well.

  1. Textured carbon surfaces on copper by sputtering

    NASA Technical Reports Server (NTRS)

    Curren, A. N. (Inventor); Jensen, K. A. (Inventor); Roman, R. F. (Inventor)

    1986-01-01

    A very thin layer of highly textured carbon is applied to a copper surface by a triode sputtering process. A carbon target and a copper substrate are simultaneously exposed to an argon plasma in a vacuum chamber. The resulting carbon surface is characterized by a dense, random array of needle like spires or peaks which extend perpendicularly from the copper surface. The coated copper is especially useful for electrode plates in multistage depressed collectors.

  2. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, A.T.; Hosford, C.D.

    Microspheres are substantially uniformly coated with metals or nonmetals by simltaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure comprising a parallel array of upwardly projecting individual gas outlets is machined out to form a dimple. Glass microballoons,, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  3. Sputter coating of microspherical substrates by levitation

    DOEpatents

    Lowe, Arthur T.; Hosford, Charles D.

    1981-01-01

    Microspheres are substantially uniformly coated with metals or nonmetals by simultaneously levitating them and sputter coating them at total chamber pressures less than 1 torr. A collimated hole structure 12 comprising a parallel array of upwardly projecting individual gas outlets 16 is machined out to form a dimple 11. Glass microballoons, which are particularly useful in laser fusion applications, can be substantially uniformly coated using the coating method and apparatus.

  4. Sputtering Erosion in Ion and Plasma Thrusters

    NASA Technical Reports Server (NTRS)

    Ray, Pradosh K.

    1996-01-01

    Low energy sputtering of molybdenum, tantalum and boron nitride with xenon ions are being studied using secondary neutral and secondary ion mass spectrometry (SNMS/SIMS). An ultrahigh vacuum chamber was used to conduct the experiment at a base pressure of 1x10(exp -9) torr. The primary ion beam is generated by an ion gun which is capable of delivering ion currents in the range of 20 to 500 nA. The ion beam can be focused to a spot size of approximately 1 mm in diameter. The mass spectrometer is positioned 10 mm from the target and 90 deg to the primary ion beam direction. SNMS and SIMS spectra were collected at various incident angles and different ion energies. For boron nitride sputtering, the target was flooded with an electron beam to neutralize the charge buildup on the surface. In the SNMS mode, sputtering of Mo and Ta can be detected at an ion energy as low as 100 eV whereas in boron nitride the same was observed up to an energy of 300 eV. However, in the positive-SIMS mode, the sputtering of Mo was observed at 10 eV incident ion energy. The SIMS spectra obtained for boron nitride clearly identifies the two isotopes of boron as well as cluster ions such as B2(sup +) and molecular ions such as BN(sup +). From the angle versus yields measurements, it was found that the maximum SNMS yield shifts towards lower incident angles at low ion energies for all three samples.

  5. Enhanced vbasis laser diode package

    DOEpatents

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  6. Thermometric Property of a Diode.

    ERIC Educational Resources Information Center

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  7. Development of sputtered techniques for thrust chambers

    NASA Technical Reports Server (NTRS)

    Mullaly, J. R.; Hecht, R. J.; Schmid, T. E.; Torrey, C. T.

    1975-01-01

    Techniques and materials were developed and evaluated for the fabrication and coating of advanced, long life, regeneratively cooled thrust chambers. Materials were analyzed as fillers for sputter application of OFHC copper as a closeout layer to channeled inner structures; of the materials evaluated, aluminum was found to provide the highest bond strength and to be the most desirable for chamber fabrication. The structures and properties were investigated of thick sputtered OFHC copper, 0.15 Zr-Cu, Al2O3,-Cu, and SiC-Cu. Layered structures of OFHC copper and 0.15 Zr-Cu were investigated as means of improving chamber inner wall fatigue life. The evaluation of sputtered Ti-5Al-2.5Sn, NASA IIb-11, aluminum and Al2O3-Al alloys as high strength chamber outer jackets was performed. Techniques for refurbishing degraded thrust chambers with OFHC copper and coating thrust chambers with protective ZrO2 and graded ZrO2-copper thermal barrier coatings were developed.

  8. Measuring size dependent electrical properties from nanoneedle structures: Pt/ZnO Schottky diodes

    SciTech Connect

    Mao, Shimin; Anderson, Daniel D.; Shang, Tao; Park, Byoungnam; Dillon, Shen J.

    2014-04-14

    This work reports the fabrication and testing of nanoneedle devices with well-defined interfaces that are amenable to a variety of structural and electrical characterization, including transmission electron microscopy. Single Pt/ZnO nanoneedle Schottky diodes were fabricated by a top down method using a combination of electro-polishing, sputtering, and focused ion beam milling. The resulting structures contained nanoscale planar heterojunctions with low ideality factors, the dimensions of which were tuned to study size-dependent electrical properties. The diameter dependence of the Pt/ZnO diode barrier height is explained by a joule heating effect and/or electronic inhomogeneity in the Pt/ZnO contact area.

  9. SPUTTERING FROM A POROUS MATERIAL BY PENETRATING IONS

    SciTech Connect

    Rodriguez-Nieva, J. F.; Bringa, E. M.; Cassidy, T. A.; Caro, A.; Loeffler, M. J.; Farkas, D.

    2011-12-10

    Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space. Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

  10. Dynamical simulation for sputtering of B 4C

    NASA Astrophysics Data System (ADS)

    Kenmotsu, T.; Kawamura, T.; Ono, T.; Yamamura, Y.

    1998-10-01

    Using ACAT-DIFFUSE code, we have simulated the fluence dependence of B 4C sputtering and the associated surface composition change under D + ion bombardment. The ACAT-DIFFUSE is a simulation code, which is based on a Monte Carlo method with a binary collision approximation and solves diffusion equations. In the case of near-threshold sputtering, the preferential sputtering of B atoms is enhanced by the threshold effect. As a result, the total sputtering yield at the steady state is reduced by about 20% compared with low-fluence sputtering. The surface concentration at steady state is determined by the competitive processes between diffusion and surface-atom removal due to sputtering. At normal incidence the interstitial diffusion contributes appreciably to the steady-state surface concentration, but at grazing incidence this effect is small. Therefore, the steady-state surface concentration ratio at grazing incidence is less than that of normal incidence.

  11. Sputtering: A vacuum deposition method for coating material

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1972-01-01

    The sputtering process is described in terms of its features: versatility, momentum transfer, configuration of target, precise controls and the relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and internal stresses. The strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched (cleaned) surface, and the submicroscopic particle size. An illustration is a sputtered solid film lubricant such as MoS2. Friction tests were conducted on a thin, 2000 A deg thick MoS2 film. These films are very dense and without observable pinholes, and the particle to particle cohesion is strong. Tolerances (film thickness) can be controlled to a millionth of a centimeter. Very adherent films of sputtered Teflon can be deposited in a single operation on any type of material (metal, glass, paper) and on any geometrical configuration with a dense adherent film.

  12. GaAs Films Prepared by RF-Magnetron Sputtering

    SciTech Connect

    L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

    2001-08-01

    The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

  13. Sputtering from a Porous Material by Penetrating Ions

    NASA Technical Reports Server (NTRS)

    Rodriguez-Nieva, J. F.; Bringa, E. M.; Cassidy, T. A.; Johnson, R. E.; Caro, A.; Fama, M.; Loeffler, M.; Baragiola, R. A.; Farkas, D.

    2012-01-01

    Porous materials are ubiquitous in the universe and weathering of porous surfaces plays an important role in the evolution of planetary and interstellar materials. Sputtering of porous solids in particular can influence atmosphere formation, surface reflectivity, and the production of the ambient gas around materials in space, Several previous studies and models have shown a large reduction in the sputtering of a porous solid compared to the sputtering of the non-porous solid. Using molecular dynamics simulations we study the sputtering of a nanoporous solid with 55% of the solid density. We calculate the electronic sputtering induced by a fast, penetrating ion, using a thermal spike representation of the deposited energy. We find that sputtering for this porous solid is, surprisingly, the same as that for a full-density solid, even though the sticking coefficient is high.

  14. Mass fractionation of the lunar surface by solar wind sputtering

    NASA Technical Reports Server (NTRS)

    Switkowski, Z. E.; Haff, P. K.; Tombrello, T. A.; Burnett, D. S.

    1975-01-01

    The sputtering of the lunar surface by the solar wind is examined as a possible mechanism of mass fractionation. Simple arguments based on current theories of sputtering and the ballistics of the sputtered atoms suggest that most ejected atoms will have sufficiently high energy to escape lunar gravity. However, the fraction of atoms which falls back to the surface is enriched in the heavier atomic components relative to the lighter ones. This material is incorporated into the heavily radiation-damaged outer surfaces of grains where it is subject to resputtering. Over the course of several hundred years an equilibrium surface layer, enriched in heavier atoms, is found to form. The dependence of the calculated results upon the sputtering rate and on the details of the energy spectrum of sputtered particles is investigated. It is concluded that mass fractionation by solar wind sputtering is likely to be an important phenomenon on the lunar surface.

  15. Mechanisms of Excitation and Ionization Processes in Sputtering.

    DTIC Science & Technology

    2014-09-26

    PROCESSES IN SPUTTERING cFINAL REPORT In IGNATIUS S.T. TSONG AUGUST 7, 1985 OFFICE OF NAVAL RESEARCH CONTRACT NO. N00014-81-K-0844 CARIZONA STATE...interactions. To this end, we direct our investigation on the particles sputtered when a solid surface is subjected to energetic ion bombardment. An...understanding of the basic mechanisms will allow better interpretation of experimental data obtained by surface analytical techniques which make use of sputtering

  16. Energy and mass dependence of isotopic enrichment in sputtering

    SciTech Connect

    Shutthanandan, V.; Zhang, J.; Ray, Pradosh

    2003-05-01

    When a solid surface containing more than one component is bombarded by energetic particles, the sputtered flux is found to deviated from the stoichiometric composition of the target. This is known as preferential sputtering. Usually the sputtered flux is enriched with the lighter-mass particles, particularly at small emission angles. As the bombardment of the target is continued, the target surface becomes depleted in the particles that are preferentially emitted and a steady state is eventually established, where the ratio of the sputtered particles becomes equal to the natural abundance ratio of the particles in the target.

  17. Sputter deposition of lithium silicate - lithium phosphate amorphous electrolytes

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Luck, C.F. ); Robertson, J.D. . Dept. of Chemistry)

    1991-01-01

    Thin films of an amorphous lithium-conducting electrolyte were deposited by rf magnetron sputtering of ceramic targets containing Li{sub 4}SiO{sub 4} and Li{sub 3}PO{sub 4}. The lithium content of the films was found to depend more strongly on the nature and composition of the targets than on many other sputtering parameters. For targets containing Li{sub 4}SiO{sub 4}, most of the lithium was found to segregate away from the sputtered area of the target. Codeposition using two sputter sources achieves a high lithium content in a controlled and reproducible film growth. 10 refs., 4 figs.

  18. Low energy sputtering of cobalt by cesium ions

    NASA Technical Reports Server (NTRS)

    Handoo, A.; Ray, Pradosh K.

    1989-01-01

    An experimental facility to investigate low energy (less than 500 eV) sputtering of metal surfaces with ions produced by an ion gun is described. Results are reported on the sputtering yield of cobalt by cesium ions in the 100 to 500 eV energy range at a pressure of 1 times 10(exp -6) Torr. The target was electroplated on a copper substrate. The sputtered atoms were collected on a cobalt foil surrounding the target. Co-57 was used as a tracer to determine the sputtering yield.

  19. Light Emitting Diodes (LEDs)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  20. Improving the efficiency of high-power diode lasers using diamond heat sinks

    SciTech Connect

    Parashchuk, Valentin V; Baranov, V V; Telesh, E V; Mien, Vu Doan; Luc, Vu Van; Truong, Pham Van; Belyaeva, A K

    2010-06-23

    Using multifunctional ion beam and magnetron sputtering systems, we have developed chemical and vacuum techniques for producing metallic coatings firmly adherent to various surfaces, with application to copper and diamond heat sinks for diode lasers. Conditions have been optimised for mounting diode lasers and bars using the proposed metallisation processes, and significant improvements in the output parameters of the devices have been achieved. The power output of cw laser diodes on diamond heat sinks increases by up to a factor of 2, the linear (working) portion of their power-current characteristic becomes markedly broader, and their slope efficiency increases by a factor of 1.5 - 2 relative to that of lasers on copper heat spreaders. The use of diamond heat sinks extends the drive current range of pulsed diode bars by a factor of 2 - 3 and enables them to operate at more than one order of magnitude longer pump pulse durations (up to milliseconds) when the pulse repetition rate is at least 10 Hz. (lasers)

  1. Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

    NASA Astrophysics Data System (ADS)

    Akgul, Guvenc; Aksoy Akgul, Funda; Emrah Unalan, Husnu; Turan, Rasit

    2016-04-01

    In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5 G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37 V, 3.30 mA cm-2, 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100 nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

  2. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    SciTech Connect

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua; Jin, Jidong; Du, Lulu; Xin, Qian; Song, Aimin

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  3. Carbon-Nanotube Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Manohara, Harish; Wong, Eric; Schlecht, Erich; Hunt, Brian; Siegel, Peter

    2006-01-01

    Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid

  4. Gas Sensing Diode Comprising SiC

    NASA Technical Reports Server (NTRS)

    Hunter, Gary William (Inventor)

    2001-01-01

    A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 degrees C. The diode is both sensitive and stable at elevated temperatures.

  5. Trace Detection with Diode Lasers

    NASA Astrophysics Data System (ADS)

    Fox, Richard W.

    1995-01-01

    Diode lasers were used to detect trace quantities of calcium, lead, chromium, cesium and rubidium. Extended -cavities were often employed for wavelength tuning and linewidth narrowing, and design considerations for the cavities are discussed. Calcium was detected under low pressure, Doppler-free conditions, and consequently the frequency stability of the laser's power spectrum was studied. The laser's frequency noise spectral density was measured and converted by calculation to the power spectrum. Examples of laser frequency noise densities with corresponding calculated power spectrums for free-running and frequency-locked conditions are given. An electronic feedback system to narrow a 657 nm wavelength diode laser's linewidth was constructed, and the resulting linewidth with respect to the locking cavity was measured to be approximately 500 Hz. Calcium atom concentrations of 0.35 x 10E-09 in water samples were measured by flame laser-enhanced ionization using a 423 nm wavelength frequency-doubled diode laser system. Analysis of the ionization signal and the noise was performed. Additional measurements of water samples with diode lasers demonstrated chromium detection at 25 x 10E-09, cesium at 0.25 x 10E -09, and rubidium at 0.25 x 10E-09. Lead was detected using a frequency-doubled diode system at a wavelength of 405 nm. The detection was by absorption from a metastable energy level; lead atoms in an argon vapor were excited into the metastable level by a radio-frequency discharge.

  6. Sputtered protective coatings for die casting dies

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Nieh, C. Y.; Wallace, J. F.

    1981-01-01

    This investigation determined whether selected ion beam sputtered coatings on H-13 die steel would have the potential of improving the thermal fatigue behavior of the steel used as a die in aluminum die casting. The coatings were selected to test candidate insulators and metals capable of providing protection of the die surface. The studies indicate that 1 micrometer thick W and Pt coatings reduced the thermal fatigue more than any other coating tested and are candidates to be used on a die surface to increase die life.

  7. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  8. Fabrication of a Schottky diode with transfer-free deposition of multilayer graphene on n-GaN by solid-phase reaction

    NASA Astrophysics Data System (ADS)

    Sahab Uddin, Md.; Ueno, Kazuyoshi

    2017-04-01

    Transfer-free deposition of multilayer graphene (MLG) on n-GaN by a solid-phase reaction was demonstrated for the first time for the fabrication of a Schottky diode. To improve the crystallinity and uniformity of MLG films, a new approach of heat sputtering for the deposition of amorphous carbon (C) and cobalt (Co) as catalyst layers has been investigated. The characteristics obtained by Raman spectroscopy and scanning electron microscopy (SEM) measurements revealed that the crystallinity and uniformity of MLG films were improved significantly by employing heat sputtering rather than conventional room-temperature sputtering. MLG–GaN Schottky diodes were fabricated with optimized deposition of MLG on n-GaN. The Schottky barrier height determined on the basis of the thermionic emission theory using current–voltage (I–V) data was 0.75 eV. The reverse leakage current was found to be of the order of 10‑7 A/mm2. The obtained results indicate the MLG fabrication on n-GaN by our proposed method might have potential applications in the fabrication of Schottky diodes.

  9. Comparison of the Sputter Rates of Oxide Films Relative to the Sputter Rate of SiO2

    SciTech Connect

    Baer, Donald R.; Engelhard, Mark H.; Lea, Alan S.; Nachimuthu, Ponnusamy; Droubay, Timothy C.; Kim, J.; Lee, B.; Mathews, C.; Opila, R. L.; Saraf, Laxmikant V.; Stickle, William F.; Wallace, Robert; Wright, B. S.

    2010-09-02

    Because of the increasing technological importance of oxide films for a variety of applications, there is a growing interest in knowing the sputter rates for a wide variety of oxides. To support needs of users of the Environmental Molecular Sciences Laboratory (EMSL) User facility as well as our research programs, we have made a series of measurements of the sputter rates for oxide films that have been grown by oxygen plasma assisted molecular beam epitaxy (OPA-MBE), pulsed laser deposition (PLD), Atomic Layer Deposition (ALD), electrochemical oxidation, or sputter deposition. The sputter rates for these oxide films were determined in comparison to the sputter rates for thermally grown SiO2, a common sputter rate reference material. The film thicknesses and densities of these films were usually measured using x-ray reflectivity (XRR). These samples were mounted in an x-ray photoelectron spectroscopy (XPS) system or an Auger electron spectrometer for sputtering measurements using argon ion sputtering. Although the primary objective was to determine relative sputter rates at a fixed angle, the measurements were also used to determine: i) the angle dependence of the relative sputter rates; ii) the energy dependence of the relative sputter rates; and iii) the extent of ion beam reduction for the various oxides. Materials examined include: SiO2 (reference films), Al2O3, CeO2, Cr2O3, Fe2O3, HfO2, ITO (In-Sn-oxide) Ta2O5, TiO2 (anatase and rutile) and ZnO. We find that the sputter rates for the oxides can vary up to a factor of two (usually slower) from that observed for SiO2. The ratios of sputter rates to SiO2 appear to be relatively independent of ion beam energy for the range of 1kV to 4 kV and for incident angles of less than 50º. As expected, the ion beam reduction of the oxides varies with the sputter angle. These studies demonstrate that we can usually obtain sputter rate reproducibility better than 5% for similar oxide films.

  10. Impurity-free quantum well intermixing for large optical cavity high-power laser diode structures

    NASA Astrophysics Data System (ADS)

    Kahraman, Abdullah; Gür, Emre; Aydınlı, Atilla

    2016-08-01

    We report on the correlation of atomic concentration profiles of diffusing species with the blueshift of the quantum well luminescence from both as-grown and impurity free quantum wells intermixed on actual large optical cavity high power laser diode structures. Because it is critical to suppress catastrophic optical mirror damage, sputtered SiO2 and thermally evaporated SrF2 were used both to enhance and suppress quantum well intermixing, respectively, in these (Al)GaAs large optical cavity structures. A luminescence blueshift of 55 nm (130 meV) was obtained for samples with 400 nm thick sputtered SiO2. These layers were used to generate point defects by annealing the samples at 950 °C for 3 min. The ensuing Ga diffusion observed as a shifting front towards the surface at the interface of the GaAs cap and AlGaAs cladding, as well as Al diffusion into the GaAs cap layer, correlates well with the observed luminescence blue shift, as determined by x-ray photoelectron spectroscopy. Although this technique is well-known, the correlation between the photoluminescence peak blue shift and diffusion of Ga and Al during impurity free quantum well intermixing on actual large optical cavity laser diode structures was demonstrated with both x ray photoelectron and photoluminescence spectroscopy, for the first time.

  11. A new technique for measuring sputtering yields at high energies

    NASA Technical Reports Server (NTRS)

    Qiu, Y.; Griffith, J. E.; Tombrello, T. A.

    1984-01-01

    The use of thin, self-supporting carbon catcher foils allows one to measure sputtering yields in a broad range of materials with high sensitivity. Analyzing the foils with Rutherford forward scattering, sputtered Al, Si and P surface densities down to 5 x 10 to the 13th per sq cm with uncertainties of about 20 percent have been measured.

  12. Neutron Radiation Induced Degradation of Diode Characteristics,

    DTIC Science & Technology

    1992-12-01

    3). La plupart des r6sultats anterieurs sur les diodes A jonction p-n correspondent aux r~sultats des diodes du type 1. Les diodes du type 2 sont...d’autres types de diodes non reportds plus t6t. Ces rt~sultats sont expliqu~s qualitativement-en termes des th6ories pour une jonction p-n et pour les

  13. Monte Carlo simulations of nanoscale focused neon ion beam sputtering.

    PubMed

    Timilsina, Rajendra; Rack, Philip D

    2013-12-13

    A Monte Carlo simulation is developed to model the physical sputtering of aluminum and tungsten emulating nanoscale focused helium and neon ion beam etching from the gas field ion microscope. Neon beams with different beam energies (0.5-30 keV) and a constant beam diameter (Gaussian with full-width-at-half-maximum of 1 nm) were simulated to elucidate the nanostructure evolution during the physical sputtering of nanoscale high aspect ratio features. The aspect ratio and sputter yield vary with the ion species and beam energy for a constant beam diameter and are related to the distribution of the nuclear energy loss. Neon ions have a larger sputter yield than the helium ions due to their larger mass and consequently larger nuclear energy loss relative to helium. Quantitative information such as the sputtering yields, the energy-dependent aspect ratios and resolution-limiting effects are discussed.

  14. Electron-beam activated thermal sputtering of thermoelectric materials

    SciTech Connect

    Wu Jinsong; Dravid, Vinayak P.; He Jiaqing; Han, Mi-Kyung; Sootsman, Joseph R.; Girard, Steven; Arachchige, Indika U.; Kanatzidis, Mercouri G.

    2011-08-15

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 deg. C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  15. Electron-beam activated thermal sputtering of thermoelectric materials.

    SciTech Connect

    Wu, J.; He, J.; Han, M-K.; Sootsman, J. R.; Girard, S.; Arachchige, I. U.; Kanatzidis, M. G.; Dravid, V. P.

    2011-08-01

    Thermoelectricity and Seebeck effect have long been observed and validated in bulk materials. With the development of advanced tools of materials characterization, here we report the first observation of such an effect in the nanometer scale: in situ directional sputtering of several thermoelectric materials inside electron microscopes. The temperature gradient introduced by the electron beam creates a voltage-drop across the samples, which enhances spontaneous sputtering of specimen ions. The sputtering occurs along a preferential direction determined by the direction of the temperature gradient. A large number of nanoparticles form and accumulate away from the beam location as a result. The sputtering and re-crystallization are found to occur at temperatures far below the melting points of bulk materials. The sputtering occurs even when a liquid nitrogen cooling holder is used to keep the overall temperature at -170 C. This unique phenomenon that occurred in the nanometer scale may provide useful clues to understanding the mechanism of thermoelectric effect.

  16. Mixed composition materials suitable for vacuum web sputter coating

    NASA Technical Reports Server (NTRS)

    Banks, Bruce A.; Rutledge, Sharon K.; Dever, Joyce A.; Bruckner, Eric J.; Walters, Patricia; Hambourger, Paul D.

    1996-01-01

    Ion beam sputter deposition techniques were used to investigate simultaneous sputter etching of two component targets so as to produce mixed composition films. Although sputter deposition has been largely confined to metals and metal oxides, at least one polymeric material, poly-tetra-fluorethylene, has been demonstrated to produce sputtered fragments which repolymerize upon deposition to produce a highly cross-linked fluoropolymer resembling that of the parent target Fluoropolymer-filled silicon dioxide and fluoropolymer-filled aluminum oxide coatings have been deposited by means of ion beam sputter coat deposition resulting in films having material properties suitable for aerospace and commercial applications. The addition of fluoropolymer to silicon dioxide films was found to increase the hydrophobicity of the resulting mixed films; however, adding fluoropolymer to aluminum oxide films resulted in a reduction in hydrophobicity, thought to be caused by aluminum fluoride formation.

  17. Sputter-deposited fuel cell membranes and electrodes

    NASA Technical Reports Server (NTRS)

    Narayanan, Sekharipuram R. (Inventor); Jeffries-Nakamura, Barbara (Inventor); Chun, William (Inventor); Ruiz, Ron P. (Inventor); Valdez, Thomas I. (Inventor)

    2001-01-01

    A method for preparing a membrane for use in a fuel cell membrane electrode assembly includes the steps of providing an electrolyte membrane, and sputter-depositing a catalyst onto the electrolyte membrane. The sputter-deposited catalyst may be applied to multiple sides of the electrolyte membrane. A method for forming an electrode for use in a fuel cell membrane electrode assembly includes the steps of obtaining a catalyst, obtaining a backing, and sputter-depositing the catalyst onto the backing. The membranes and electrodes are useful for assembling fuel cells that include an anode electrode, a cathode electrode, a fuel supply, and an electrolyte membrane, wherein the electrolyte membrane includes a sputter-deposited catalyst, and the sputter-deposited catalyst is effective for sustaining a voltage across a membrane electrode assembly in the fuel cell.

  18. Sputtering at grazing ion incidence: Influence of adatom islands

    SciTech Connect

    Rosandi, Yudi; Redinger, Alex; Michely, Thomas; Urbassek, Herbert M.

    2010-09-15

    When energetic ions impinge at grazing incidence onto an atomically flat terrace, they will not sputter. However, when adatom islands (containing N atoms) are deposited on the surface, they induce sputtering. We investigate this effect for the specific case of 83 deg. -incident 5 keV Ar ions on a Pt (111) surface by means of molecular-dynamics simulation and experiment. We find that - for constant coverage {Theta} - the sputter yield has a maximum at island sizes of N congruent with 10-20. A detailed picture explaining the decline of the sputter yield toward larger and smaller island sizes is worked out. Our simulation results are compared with dedicated sputtering experiments, in which a coverage of {Theta}=0.09 of Pt adatoms are deposited onto the Pt (111) surface and form islands with a broad distribution around a most probable size of N congruent with 20.

  19. Plasma debris sputter resistant x-ray mirror.

    PubMed

    Amano, Sho; Inoue, Tomoaki; Harada, Tetsuo

    2013-06-01

    A diamond-like carbon (DLC) mirror, used as a grazing incident mirror in a plasma x-ray source, exhibits a high resistance to plasma debris sputtering. Good mirror reflectivity at a wavelength of 13.5 nm was confirmed using synchrotron radiation at the NewSUBARU facility. The erosion rate due to plasma debris sputtered at the incident debris angle of 20° was measured using a laser-produced Xe plasma source developed by the authors. The results indicate that the DLC film has a 5- and 15-fold higher sputtering resistance compared to films made of the traditional mirror materials Ru and Au, respectively. Because the DLC mirror retains a high sputtering resistance to Sn ions, it may be effective in Sn plasma source applications. We conclude that a grazing incident x-ray mirror coated with DLC can be of use as a plasma debris sputtering resistant mirror.

  20. Revibrational Spectra of Molecules Sputtered of Carbon Surfaces

    NASA Astrophysics Data System (ADS)

    Krstic, Predrag

    2008-10-01

    Irradiation of the carbon surfaces by hydrogen isotopes results in processes of crucial importance for the carbon based divertor tiles of a fusion reactor. Thus the sputtering and implantation, result in erosion, plasma pollution, and tritium retention, as well as carbon deposition all over the reactor first wall. The molecules chemically sputtered upon impact of deuterium of deuterated carbon surface are various hydrocarbons as well as We study the translational and rovibrational energy and angular spectra of sputtered molecules. The energy distributions of ejected molecules confirm the partial thermalization of the impact cascade. Sputtered hydrocarbon molecules have rovibrational energies in the range 1.5-2 eV, with relatively cold translational and rotational motion, close to 0.5 eV. In contrast, translational and rovibrational energies of sputtered deuterium molecules are close to 1 eV, with approximate equipartition between rotational and vibrational modes.

  1. Method of making diode structures

    DOEpatents

    Compaan, Alvin D.; Gupta, Akhlesh

    2006-11-28

    A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

  2. Calibrated feedback for laser diodes

    SciTech Connect

    Howard, P.G.

    1986-04-22

    A method is described of calibrating the feedback output from the feedback light detector of the laser diode of an optical disk drive of a laser light pen which consists of mounting a first and a second resistor in a laser light pen; connecting the first resistor between the feedback light detector and ground; connecting the second resistor between the feedback light detector and a feedback output; operating the laser diode to produce a predetermined light power output; adjusting the resistance of the first resistor to produce a predetermined voltage at the feedback output; and adjusting the resistance of the second resistor to produce a predetermined impedance at the feedback output.

  3. Thermal conductivities of thin, sputtered optical films

    SciTech Connect

    Henager, C.H. Jr.; Pawlewicz, W.T.

    1991-05-01

    The normal component of the thin film thermal conductivity has been measured for the first time for several advanced sputtered optical materials. Included are data for single layers of boron nitride (BN), aluminum nitride (AIN), silicon aluminum nitride (Si-Al-N), silicon aluminum oxynitride (Si-Al-O-N), silicon carbide (SiC), and for dielectric-enhanced metal reflectors of the form Al(SiO{sub 2}/Si{sub 3}N{sub 4}){sup n} and Al(Al{sub 2}O{sub 3}/AIN){sup n}. Sputtered films of more conventional materials like SiO{sub 2}, Al{sub 2}O{sub 3}, Ta{sub 2}O{sub 5}, Ti, and Si have also been measured. The data show that thin film thermal conductivities are typically 10 to 100 times lower than conductivities for the same materials in bulk form. Structural disorder in the amorphous or very fine-grained films appears to account for most of the conductivity difference. Conclusive evidence for a film/substrate interface contribution is presented.

  4. Low Temperature Thermometry Using Inexpensive Silicon Diodes.

    ERIC Educational Resources Information Center

    Waltham, N. R.; And Others

    1981-01-01

    Describes the use of silicon diodes for low temperature thermometry in the teaching laboratory. A simple and inexpensive circuit for display of the diode forward voltage under constant current conditions is described, and its application in the evaluation of low cost silicon diodes as low temperature thermometers is presented. (SK)

  5. IC Fabrication Methods Improve Laser Diodes

    NASA Technical Reports Server (NTRS)

    Miller, M.; Pickhardt, V.

    1984-01-01

    Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.

  6. Neutron Radiation Induced Degradation of Diode Characteristics

    DTIC Science & Technology

    1992-12-01

    de fluance utilis6 dans ce travail (diode du type 3). La plupart des r~sultats anterieurs sur les, diodes A jonction p-n correspondent aux rdsultats...termes des thories pour une jonction p-n et pour les effects de radiations sur semiconducteurs. II est prddit qu’une diode du type 3 pourrait &tre

  7. Semiconductor Laser Diodes and the Design of a D.C. Powered Laser Diode Drive Unit

    DTIC Science & Technology

    1988-06-01

    the design of a laser diode modulation circuit is the determination of the input imped- ence and equivalent circuit of the laser diode and packag- ing...current source with a high internal impedance as compared to the input imped- ance of the laser. [Ref. l:p. 33] Summarizing the above, laser diodes...switches. The modula- tion circuitry is connected in parallel with the laser diode and provides a modulated input to the laser diode superim- posed onto

  8. Threshold energies of light-ion sputtering and heavy-ion sputtering as a function of angle of incidence

    NASA Astrophysics Data System (ADS)

    Yamamura, Y.

    1984-03-01

    The angular dependence of threshold energies has been investigated for light-ion sputtering and heavy-ion sputtering, and simple expressions for the angular dependences of threshold energies are derived for these two cases. For not-too-large angles of incidence, the threshold energy of heavy-ion sputtering is a decreasing function of the angle of incidence because of the anisotropy of the velocity distribution of recoil atoms, while the threshold energy of light-ion sputtering shows a weak angular dependence. For grazing angles of incidence, the threshold energies of these two cases are increasing functions of the angle of incidence because of surface scattering. In order to examine these theoretical angular dependences of threshold energies, the computer simulations have been performed using the ACAT code. It is found that in the near-threshold regime the angular dependences of sputtering yield by heavy ions are much different from those by light ions.

  9. Thermal-Diode Sandwich Panel

    NASA Technical Reports Server (NTRS)

    Basiulis, A.

    1986-01-01

    Thermal diode sandwich panel transfers heat in one direction, but when heat load reversed, switches off and acts as thermal insulator. Proposed to control temperature in spacecraft and in supersonic missiles to protect internal electronics. In combination with conventional heat pipes, used in solar panels and other heat-sensitive systems.

  10. Characteristic diode parameters in thermally annealed Ni/p-InP contacts

    NASA Astrophysics Data System (ADS)

    Turut, A.; Ejderha, K.; Yildirim, N.; Abay, B.

    2016-04-01

    The Ni/p-InP Schottky diodes (SDs) have been prepared by DC magnetron sputtering deposition. After the diode fabrication, they have been thermally annealed at 700 °C for 1 min in N2 atmosphere. Then, the current-voltage characteristics of the annealed and non-annealed (as-deposited) SDs have been measured in the measurement temperature range of 60-400 K with steps of 20 K under dark conditions. After 700 °C annealing, an improvement in the ideality factor value has been observed from 60 to 200 K and the barrier height (BH) value approximately has remained unchanged in the measurement temperature range of 200-400 K. The BH of the annealed diode has decreased obeying the double-Gaussian distribution (GD) of the BHs with decreasing measurement temperature from 200 to 60 K. The BH for the as-deposited diode has decreased with decreasing temperature obeying the single-GD over the whole measurement temperature range. An effective Richardson constant value of 54.21 A/cm2K2 for the as-deposited SD has been obtained from the modified Richardson plot by the single-GD plot, which is in very close agreement with the value of 60 A/K2cm2 for p-type InP. The series resistance value of the annealed SD is lower than that of the non-annealed SD at each temperature and approximately has remained unchanged from 140 to 240 K. Thus, it can be said that an improvement in the diode parameters has been observed due to the thermal annealing at 700 °C for 1 min in N2 atmosphere.

  11. Transport Phenomena of Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, S.; Su, C.; Lehoczky, S. L.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffusive drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knudsen number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, pd, exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several models including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

  12. Transport Phenomena of Off-Axis Sputtering Deposition

    NASA Technical Reports Server (NTRS)

    Zhu, S.; Su, C. H.; Lehoczky, S. L.; Zhang, S.; Whitaker, Ann F. (Technical Monitor)

    2001-01-01

    Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffuse drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knodson (Knudsen??) number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, p exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several methods including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

  13. Discharge Physics of High Power Impulse Magnetron Sputtering

    SciTech Connect

    Anders, Andre

    2010-10-13

    High power impulse magnetron sputtering (HIPIMS) is pulsed sputtering where the peak power exceeds the time-averaged power by typically two orders of magnitude. The peak power density, averaged over the target area, can reach or exceed 107 W/m2, leading to plasma conditions that make ionization of the sputtered atoms very likely. A brief review of HIPIMS operation is given in a tutorial manner, illustrated by some original data related to the self-sputtering of niobium in argon and krypton. Emphasis is put on the current-voltage-time relationships near the threshold of self-sputtering runaway. The great variety of current pulse shapes delivers clues on the very strong gas rarefaction, self-sputtering runaway conditions, and the stopping of runaway due to the evolution of atom ionization and ion return probabilities as the gas plasma is replaced by metal plasma. The discussions are completed by considering instabilities and the special case of ?gasless? self-sputtering.

  14. Ion Beam Sputtered Coatings of Bioglass

    NASA Technical Reports Server (NTRS)

    Hench, Larry L.; Wilson, J.; Ruzakowski, Patricia Henrietta Anne

    1982-01-01

    The ion beam sputtering technique available at the NASA-Lewis was used to apply coatings of bioglass to ceramic, metallic, and polymeric substrates. Experiments in vivo and in vitro described investigate these coatings. Some degree of substrate masking was obtained in all samples although stability and reactivity equivalent to bulk bioglass was not observed in all coated samples. Some degree of stability was seen in all coated samples that were reacted in vitro. Both metallic and ceramic substrates coated in this manner failed to show significantly improved coatings over those obtained with existing techniques. Implantation of the coated ceramic substrate samples in bone gave no definite bonding as seen with bulk glass; however, partial and patchy bonding was seen. Polymeric substrates in these studies showed promise of success. The coatings applied were sufficient to mask the underlying reactive test surface and tissue adhesion of collagen to bioglass was seen. Hydrophilic, hydrophobic, charged, and uncharged polymeric surfaces were successfully coated.

  15. Plasma Induced Sputtered Exosphere of Callisto

    NASA Astrophysics Data System (ADS)

    Pfleger, Martin; Lammer, Helmut; Lindkvist, Jesper; Holmström, Mats; Vorburger, Audrey; Galli, André; Wurz, Peter; Lichtenegger, Herbert; Barabash, Stas

    2014-05-01

    A better understanding of particle release processes from the Gallilean satellites such as Callisto's surface is needed for planned exospheric and remote surface geochemical studies by the particle and plasma instruments of the PEP experiment on board of ESA's JUICE mission. We study the interaction between the Jovian magnetosphere plasma and Callisto's surface with a hybrid model and applied a geochemical surface composition model for the input of the surface sputter release. Then we apply a 3-D exospheric model for studying the feasibility of exospheric measurements. We model energy and ejection angle distributions of the released particles from the surface, with the emission process determining the actual distribution functions. Our model follows the trajectory of each particle by numerical integration until the particle hits Callisto's surface again or escapes from the calculation domain. Using a large set of these trajectories, bulk parameters of the exospheric gas are derived, e.g., particle densities for various species.

  16. Sputtered protective coatings for die casting dies

    NASA Technical Reports Server (NTRS)

    Mirtich, M. J.; Nieh, C.-Y.; Wallace, J. F.

    1981-01-01

    Three experimental research designs investigating candidate materials and processes involved in protective die surface coating procedures by sputter deposition, using ion beam technologies, are discussed. Various pre-test results show that none of the coatings remained completely intact for 15,000 test cycles. The longest lifetime was observed for coatings such as tungsten, platinum, and molybdenum which reduced thermal fatigue, but exhibited oxidation and suppressed crack initiation only as long as the coating did not fracture. Final test results confirmed earlier findings and coatings with Pt and W proved to be the candidate materials to be used on a die surface to increase die life. In the W-coated specimens, which remained intact on the surface after thermal fatigue testing, no oxidation was found under the coating, although a few cracks formed on the surface where the coating broke down. Further research is planned.

  17. Potential energy sputtering of EUVL materials

    SciTech Connect

    Pomeroy, J M; Ratliff, L P; Gillaspy, J D; Bajt, S

    2004-07-02

    Of the many candidates employed for understanding the erosion of critical Extreme Ultraviolet Lithography (EUVL) components, potential energy damage remains relatively uninvestigated. Unlike the familiar kinetic energy sputtering, which is a consequence of the momentum transferred by an ion to atoms in the target, potential energy sputtering occurs when an ion rapidly collects charge from the target as it neutralizes. Since the neutralization energy of a singly charged ion is typically on the order of 10 eV, potential energy effects are generally neglected for low charge state ions, and hence the bulk of the sputtering literature. As an ion's charge state is increased, the potential energy (PE) increases rapidly, e.g. PE(Xe{sup 1+})= 11 eV, PE(Xe{sup 10+}) = 810 eV, PE(Xe{sup 20+}) = 4.6 keV, etc. By comparison, the binding energy of a single atom on a surface is typically about 5 eV, so even relatively inefficient energy transfer mechanisms can lead to large quantities of material being removed, e.g. 25% efficiency for Xe{sup 10+} corresponds to {approx} 40 atoms/ion. By comparison, singly charged xenon ions with {approx} 20 keV of kinetic energy sputter only about 5 atoms/ion at normal incidence, and less than 1 atom/ion at typical EUV source energies. EUV light sources are optimized for producing approximately 10{sup 16} xenon ions per shot with an average charge state of q=10 in the core plasma. At operational rates of {approx}10 kHz, the number of ions produced per second becomes a whopping 10{sup 20}. Even if only one in a billion ions reaches the collector, erosion rates could reach {approx}10{sup 12} atoms per second, severely reducing the collector lifetime (for an average yield of 10 atoms/ion). In addition, efforts to reduce contamination effects may contribute to reduced neutralization and even larger potential energy damages rates (discussed further below). In order to provide accurate estimates for collector lifetimes and to develop mitigation schemes

  18. Evolution of film temperature during magnetron sputtering

    SciTech Connect

    Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

    2006-07-15

    We report on the results of measurements of the temperature T{sup F}{sub surf} which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T{sup F}{sub surf} and substrate temperature (T{sub s}) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T{sup F}{sub surf} steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T{sub s} after stopping the deposition. At the same time, the T{sub s} either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T{sub s} remains several times lower than the T{sup F}{sub surf}. The T{sup F}{sub surf} is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T{sup F}{sub surf} of HTSL is several times higher than the T{sub s}. Variations in the T{sup F}{sub surf} fairly correlate with structure changes of Cr films along thickness investigated in detail previously.

  19. Whiskers, cones and pyramids created in sputtering by ion bombardment

    NASA Technical Reports Server (NTRS)

    Wehner, G. K.

    1979-01-01

    A thorough study of the role which foreign atoms play in cone formation during sputtering of metals revealed many experimental facts. Two types of cone formation were distinquished, deposit cones and seed cones. Twenty-six combinations of metals for seed cone formation were tested. The sputtering yield variations with composition for combinations which form seed cones were measured. It was demonstrated that whisker growth becomes a common occurrence when low melting point material is sputter deposited on a hot nonsputtered high melting point electrode.

  20. Porous, High Capacity Coatings for Solid Phase Microextraction by Sputtering.

    PubMed

    Diwan, Anubhav; Singh, Bhupinder; Roychowdhury, Tuhin; Yan, DanDan; Tedone, Laura; Nesterenko, Pavel N; Paull, Brett; Sevy, Eric T; Shellie, Robert A; Kaykhaii, Massoud; Linford, Matthew R

    2016-02-02

    We describe a new process for preparing porous solid phase microextraction (SPME) coatings by the sputtering of silicon onto silica fibers. The microstructure of these coatings is a function of the substrate geometry and mean free path of the silicon atoms, and the coating thickness is controlled by the sputtering time. Sputtered silicon structures on silica fibers were treated with piranha solution (a mixture of concd H2SO4 and 30% H2O2) to increase the concentration of silanol groups on their surfaces, and the nanostructures were silanized with octadecyldimethylmethoxysilane in the gas phase. The attachment of this hydrophobic ligand was confirmed by X-ray photoelectron spectroscopy and contact angle goniometry on model, planar silicon substrates. Sputtered silicon coatings adhered strongly to their surfaces, as they were able to pass the Scotch tape adhesion test. The extraction time and temperature for headspace extraction of mixtures of alkanes and alcohols on the sputtered fibers were optimized (5 min and 40 °C), and the extraction performances of SPME fibers with 1.0 or 2.0 μm of sputtered silicon were compared to those from a commercial 7 μm poly(dimethylsiloxane) (PDMS) fiber. For mixtures of alcohols, aldehydes, amines, and esters, the 2.0 μm sputtered silicon fiber yielded signals that were 3-9, 3-5, 2.5-4.5, and 1.5-2 times higher, respectively, than those of the commercial fiber. For the heavier alkanes (undecane-hexadecane), the 2.0 μm sputtered fiber yielded signals that were approximately 1.0-1.5 times higher than the commercial fiber. The sputtered fibers extracted low molecular weight analytes that were not detectable with the commercial fiber. The selectivity of the sputtered fibers appears to favor analytes that have both a hydrophobic component and hydrogen-bonding capabilities. No detectable carryover between runs was noted for the sputtered fibers. The repeatability (RSD%) for a fiber (n = 3) was less than 10% for all analytes tested

  1. The new applications of sputtering and ion plating

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1977-01-01

    The potential industrial applications of sputtering and ion plating are strictly governed by the unique features these methods possess. The outstanding features of each method, the resultant coating characteristics and the various sputtering modes and configurations are discussed. New, more complex coatings and deposits can be developed such as graded composition structures (metal-ceramic seals), laminated and dispersion strengthened composites which improve the mechanical properties and high temperature stability. Specific industrial areas where future effort of sputtering and ion plating will concentrate to develop intricate alloy or compound coatings and solve difficult problem areas are discussed.

  2. Formation of dielectric silicon compounds by reactive magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Veselov, D. S.; Voronov, Yu A.

    2016-09-01

    The paper is devoted to the study of reactive magnetron sputtering of the silicon target in the ambient of inert argon gas with reactive gas, nitrogen or oxygen. The magnetron was powered by two mid-frequency generators of a rectangular pulse of opposite polarity. The negative polarity pulse provides the sputtering of the target. The positive polarity pulse provides removal of accumulated charge from the surface of the target. This method does not require any special devices of resistances matching and provides continuous sputtering of the target.

  3. Mass fractionation of the lunar surface by solar wind sputtering

    NASA Technical Reports Server (NTRS)

    Switkowski, Z. E.; Haff, P. K.; Tombrello, T. A.; Burnett, D. S.

    1977-01-01

    An investigation is conducted concerning the mass-fractionation effects produced in connection with the bombardment of the moon by the solar wind. Most of the material ejected by sputtering escapes the moon's gravity, but some returning matter settles back onto the lunar surface. This material, which is somewhat richer in heavier atoms than the starting surface, is incorporated into the heavily radiation-damaged outer surfaces of grains. The investigation indicates that sputtering of the lunar surface by the solar wind will give rise to significant surface heavy atom enrichments if the grain surfaces are allowed to come into sputtering equilibrium.

  4. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1993-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  5. Magnetron sputtered boron films and TI/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1993-04-20

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  6. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, D.M.; Jankowski, A.F.

    1995-02-14

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence. 6 figs.

  7. Magnetron sputtered boron films and Ti/B multilayer structures

    DOEpatents

    Makowiecki, Daniel M.; Jankowski, Alan F.

    1995-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

  8. Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

    SciTech Connect

    Anders, Andre

    2008-05-19

    Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases {approx}Q{sup 1/2}, whereas the rate normalized to the average power decreases {approx}Q{sup -1/2}, with Q being the mean ion charge state number.

  9. Time resolved metal line profile by near-ultraviolet tunable diode laser absorption spectroscopy

    NASA Astrophysics Data System (ADS)

    Vitelaru, C.; de Poucques, L.; Minea, T. M.; Popa, G.

    2011-03-01

    Pulsed systems are extensively used to produce active species such as atoms, radicals, excited states, etc. The tunable diode laser absorption spectroscopy (TD-LAS) is successfully used to quantify the density of absorbing species, but especially for stationary or slow changing systems. The time resolved-direct absorption profile (TR-DAP) measurement method by TD-LAS, with time resolution of μs is proposed here as an extension of the regular use of diode laser absorption spectroscopy. The spectral narrowness of laser diodes, especially in the blue range (˜0.01 pm), combined with the nanosecond fast trigger of the magnetron pulsed plasma and long trace recording on the oscilloscope (period of second scale) permit the detection of the sputtered titanium metal evolution in the afterglow (˜ms). TR-DAP method can follow the time-dependence of the temperature (Doppler profile) and the density (deduced from the absorbance) of any medium and heavy species in a pulsed system.

  10. Structural, surface, optical, and mechanical properties of Zn3N2 thin films prepared by sputtering deposition

    NASA Astrophysics Data System (ADS)

    Wen, Ting; Jiang, Nanke; Georgiev, Daniel G.; Jayatissa, Ahalapitiya H.

    2010-04-01

    Zinc nitride and zinc oxide can have wide range applications owing to their band-gap changes and controlling capability of n-type to p-type behavior by impurity doping. Thus, zinc oxy-nitrides can be utilized to design novel photonic devices such as solar cells, UV-Visible devices, and light emitting diodes. In this paper, feasibility of tuning the optical and electronic properties of zinc oxynitride thin films in an rf magnetron sputtering deposition. It was found that the change of gas composition such as Ar: N2: O2 can change the properties of zinc nitride films for a wide range. The absorption coefficient of zinc nitride films were larger than zinc oxide thin films in low photon energy range, in particular visible region of the spectrum. These results indicated that the zinc nitride may find suitable applications in solar cells and photonic devices.

  11. Megahertz organic/polymer diodes

    DOEpatents

    Katz, Howard Edan; Sun, Jia; Pal, Nath Bhola

    2012-12-11

    Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100KHz, 500KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere.

  12. Quantum Noise in Laser Diodes

    NASA Technical Reports Server (NTRS)

    Giacobino, E.; Marin, F.; Bramati, A.; Jost, V.; Poizat, J. Ph.; Roch, J.-F.; Grangier, P.; Zhang, T.-C.

    1996-01-01

    We have investigated the intensity noise of single mode laser diodes, either free-running or using different types of line narrowing techniques at room temperature. We have measured an intensity squeezing of 1.2 dB with grating-extended cavity lasers and 1.4 dB with injection locked lasers (respectively 1.6 dB and 2.3 dB inferred at the laser output). We have observed that the intensity noise of a free-running nominally single mode laser diode results from a cancellation effect between large anti-correlated fluctuations of the main mode and of weak longitudinal side modes. Reducing the side modes by line narrowing techniques results in intensity squeezing.

  13. Development of RF sputtered chromium oxide coating for wear application

    NASA Technical Reports Server (NTRS)

    Bhushan, B.

    1979-01-01

    The radio frequency sputtering technique was used to deposite a hard refractory, chromium oxide coating on an Inconel X-750 foil 0.1 mm thick. Optimized sputtering parameters for a smooth and adherent coating were found to be as follows: target-to-substrate spacing, 41.3 mm; argon pressure, 5-10 mTorr; total power to the sputtering module, 400 W (voltage at the target, 1600 V), and a water-cooled substrate. The coating on the annealed foil was more adherent than that on the heat-treated foil. Substrate biasing during the sputter deposition of Cr2O3 adversely affected adherence by removing naturally occurring interfacial oxide layers. The deposited coatings were amorphous and oxygen deficient. Since amorphous materials are extremely hard, the structure was considered to be desirable.

  14. Extended incident-angle dependence formula for physical sputtering

    NASA Astrophysics Data System (ADS)

    Ono, T.; Shibata, K.; Kenmotsu, T.; Muramoto, T.; Li, Z.; Kawamura, T.

    2007-06-01

    We extend a new semi-empirical formula for incident-angle dependence of normalized sputtering yield that includes the contribution from the direct knock-out process to the sputtering yield. This was not considered fully in the previous sputtering formula. Three parameters included in the new formula are estimated for data calculated with a Monte Carlo code ACAT for D+ ions incident obliquely on C, Fe and W materials in incident energy regions from several tens of eV to 10 keV. Then, the parameters are expressed as a function of incident energy. The extended formula with these functions well reproduces the calculated data of normalized sputtering yield in the whole energy ranges.

  15. Nanopatterning of swinging substrates by ion-beam sputtering

    NASA Astrophysics Data System (ADS)

    Yoon, Sun Mi; Kim, J.-S.

    2016-05-01

    Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

  16. Deposition of reactively ion beam sputtered silicon nitride coatings

    NASA Technical Reports Server (NTRS)

    Grill, A.

    1982-01-01

    An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

  17. Sputtering of Au induced by single Xe ion impacts

    SciTech Connect

    Birtcher, R. C.; Donnelly, S. E.

    1999-12-06

    Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry.

  18. Development of hydrophobicity of mica surfaces by ion beam sputtering

    NASA Astrophysics Data System (ADS)

    Metya, Amaresh; Ghose, Debabrata; Ray, Nihar Ranjan

    2014-02-01

    The hydrophilic mica surface can be made hydrophobic by low energy Ar+ ion sputtering. The ion sputtering leads to both topographical and physicochemical changes of the surface which are thought to be responsible for the water repelling behavior. The sessile drop method is used to evaluate the wetting properties of the sputtered mica surfaces. It has been shown that the sputter-pattern at the nano-length scale has little influence on the development of hydrophobicity. On the other hand, the wettability appears to be strongly connected with the chemistry of the bombarded surface. We have also studied the temporal evolution of contact angle as the water evaporates due to difference in vapor pressures between the droplet surface and the surroundings. The analysis offers a simple method to estimate the diffusion coefficient of water vapor.

  19. Sputter deposition of metallic thin film and directpatterning

    SciTech Connect

    Ji, L.; Chen, Y.; Jiang, X.; Ji, Q.; Leung, K.-N.

    2005-09-09

    A compact apparatus is developed for deposition of metal thin film. The system employs an RF discharge plasma source with a straight RF antenna, which is made of or covered with deposition material, serving as sputtering target at the same time. The average deposition rate of copper thin film is as high as 450nm/min. By properly allocating the metal materials on the sputtering antenna, mixture deposition of multiple metal species is achieved. Using an ion beam imprinting scheme also taking advantage of ion beam focusing technique, two different schemes of direct patterning deposition process are developed: direct depositing patterned metallic thin film and resistless ion beam sputter patterning. Preliminary experiments have demonstrated direct pattern transfer from a template with feature size of micro scale; patterns with more than 10x reduction are achieved by sputtering patterning method.

  20. RF Sputtering for preparing substantially pure amorphous silicon monohydride

    DOEpatents

    Jeffrey, Frank R.; Shanks, Howard R.

    1982-10-12

    A process for controlling the dihydride and monohydride bond densities in hydrogenated amorphous silicon produced by reactive rf sputtering of an amorphous silicon target. There is provided a chamber with an amorphous silicon target and a substrate therein with the substrate and the target positioned such that when rf power is applied to the target the substrate is in contact with the sputtering plasma produced thereby. Hydrogen and argon are fed to the chamber and the pressure is reduced in the chamber to a value sufficient to maintain a sputtering plasma therein, and then rf power is applied to the silicon target to provide a power density in the range of from about 7 watts per square inch to about 22 watts per square inch to sputter an amorphous silicon hydride onto the substrate, the dihydride bond density decreasing with an increase in the rf power density. Substantially pure monohydride films may be produced.

  1. The corrosivity and passivity of sputtered Mg-Ti alloys

    DOE PAGES

    Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; ...

    2015-11-30

    Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide filmmore » was formed on a sputtered Ti–Mg based alloy.« less

  2. The corrosivity and passivity of sputtered Mg-Ti alloys

    SciTech Connect

    Song, Guang -Ling; Unocic, Kinga A.; Meyer, III, Harry M.; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

    2015-11-30

    Our study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. Moreover, the surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

  3. Formation of nanostructured metallic glass thin films upon sputtering.

    PubMed

    Ketov, Sergey V; Joksimovic, Rastko; Xie, Guoqiang; Trifonov, Artem; Kurihara, Kazue; Louzguine-Luzgin, Dmitri V

    2017-01-01

    Morphology evolution of the multicomponent metallic glass film obtained by radio frequency (RF) magnetron sputtering was investigated in the present work. Two modes of metallic glass sputtering were distinguished: smooth film mode and clustered film mode. The sputtering parameters, which have the most influence on the sputtering modes, were determined. As a result, amorphous Ni-Nb thin films with a smooth surface and nanoglassy structure were deposited on silica float glass and Si substrates. The phase composition of the target appeared to have a significant influence on the chemical composition of the deposited amorphous thin film. The differences in charge transport and nanomechanical properties between the smooth and nanoglassy Ni-Nb film were also determined.

  4. Magnetospheric ion sputtering and water ice grain size at Europa

    NASA Astrophysics Data System (ADS)

    Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

    2013-03-01

    We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

  5. Plasma Studies in Ion Diodes.

    DTIC Science & Technology

    1984-09-01

    high power pulse, with a typical rise time of 10 ns, to a pulsed high current vacuum diode (also variously referred to as an explosive emission , field...instantaneous event. One motivation for such studies was the developement of high voltage devices, such as x - ray tubes. for which vacuum breakdown was...Sources of high current , high voltage particle beams rely on the intermedi- ate phase of vacuum breakdown, between initial plasma formation and gap clo

  6. Fine plastic foil as backing for sputtered nickel targets.

    PubMed

    Stolarz, Anna; Seppälä, Raimo

    Targets of (58)Ni and (60)Ni with areal density between 71 and 105 μg/cm(2) backed with polyimide foil of 35-40 μg/cm(2) were prepared by sputtering with Ar ions produced by a home made sputtering device at the Target Laboratory, University of Jyväskylä. The efficiency of the procedure was about 20 %.

  7. Dust Particle Growth in a Sputtering Discharge with Krypton

    SciTech Connect

    Tawidian, H.; Mikikian, M.; Lecas, T.; Boufendi, L.

    2011-11-29

    Dust particles are grown in the PKE chamber by sputtering materials. The sputtering efficiency and the gas phase reactions can be affected by the gas type and particularly by the ion mass. Due to the presence of growing dust particles, the huge loss of electrons can trigger many instabilities in the plasma. These instabilities, the growth kinetics and the structure of the dust cloud, are compared by using two different gases: argon and krypton.

  8. Preparation of Copper Nanoparticles in Liquid by Matrix Sputtering Process

    NASA Astrophysics Data System (ADS)

    Nakagawa, Ko; Narushima, Takashi; Udagawa, Satoshi; Yonezawa, Tetsu

    2013-03-01

    As a new method for nanoparticles preparation, magnetron sputtering of metal atoms and clusters into organic liquids has been intensively used recently. In this study, metallic copper nanoparticles dispersed in pentaerythritol ethoxylate were prepared by this process. Their size control was achieved by controlling the sputtering current. Specific absorption at ca. 580 nm was detected by UV-Vis measurement which is attributed to the specific plasmon absorption of metallic copper. TEM observation also revealed the formation of metallic nanoparticles.

  9. Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

    PubMed

    Facsko; Dekorsy; Koerdt; Trappe; Kurz; Vogt; Hartnagel

    1999-09-03

    A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.

  10. Linear stability analysis of the Vlasov-Poisson equations in high density plasmas in the presence of crossed fields and density gradients

    NASA Technical Reports Server (NTRS)

    Kaup, D. J.; Hansen, P. J.; Choudhury, S. Roy; Thomas, Gary E.

    1986-01-01

    The equations for the single-particle orbits in a nonneutral high density plasma in the presence of inhomogeneous crossed fields are obtained. Using these orbits, the linearized Vlasov equation is solved as an expansion in the orbital radii in the presence of inhomogeneities and density gradients. A model distribution function is introduced whose cold-fluid limit is exactly the same as that used in many previous studies of the cold-fluid equations. This model function is used to reduce the linearized Vlasov-Poisson equations to a second-order ordinary differential equation for the linearized electrostatic potential whose eigenvalue is the perturbation frequency.

  11. A single-molecule diode

    PubMed Central

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  12. A single-molecule diode.

    PubMed

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B; Mayor, Marcel

    2005-06-21

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic pi -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical pi-systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode.

  13. Molecular diodes in optical rectennas

    NASA Astrophysics Data System (ADS)

    Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

    2016-09-01

    The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

  14. Sputtering by the Solar Wind: Effects of Variable Composition

    NASA Technical Reports Server (NTRS)

    Killen, R. M.; Arrell, W. M.; Sarantos, M.; Delory, G. T.

    2011-01-01

    It has long been recognized that solar wind bombardment onto exposed surfaces in the solar system will produce an energetic component to the exospheres about those bodies. Laboratory experiments have shown that there is no increase in the sputtering yield caused by highly charged heavy ions for metallic and for semiconducting surfaces, but the sputter yield can be noticeably increased in the case of a good insulating surface. Recently measurements of the solar wind composition have become available. It is now known that the solar wind composition is highly dependent on the origin of the particular plasma. Using the measured composition of the slow wind, fast wind, solar energetic particle (SEP) population, and coronal mass ejection (CME), broken down into its various components, we have estimated the total sputter yield for each type of solar wind. Whereas many previous calculations of sputtering were limited to the effects of proton bombardment. we show that the heavy ion component. especially the He++ component. can greatly enhance the total sputter yield during times when the heavy ion population is enhanced. We will discuss sputtering of both neutrals and ions.

  15. Optical Properties of Magnetron sputtered Nickel Thin Films

    NASA Astrophysics Data System (ADS)

    Twagirayezu, Fidele; Geerts, Wilhelmus J.; Cui, Yubo

    2015-03-01

    The study of optical properties of Nickel (Ni) is important, given the pivotal role it plays in the semiconductor and nano-electronics technology. Ni films were made by DC and RF magnetron sputtering in an ATC Orion sputtering system of AJA on various substrates. The optical properties were studied ex situ by variable angle spectroscopic (220-1000 nm) ellipsometry at room temperature. The data were modeled and analyzed using the Woollam CompleteEase Software fitting ellipsometric and transmission data. Films sputtered at low pressure have optical properties similar to that of Palik. Films sputtered at higher pressure however have a lower refraction index and extinction coefficient. It is expected from our results that the density of the sputtered films can be determined from the ellipsometric quantities. Our experiments also revealed that Ni is susceptible to a slow oxidation changing its optical properties over the course of several weeks. The optical properties of the native oxide differ from those of reactive sputtered NiO similar as found by. Furthermore the oxidation process of our samples is characterized by at least two different time constants.

  16. Kinetic simulation of neutral particle transport in sputtering processes

    NASA Astrophysics Data System (ADS)

    Trieschmann, Jan; Gallian, Sara; Brinkmann, Ralf Peter; Mussenbrock, Thomas; Ries, Stefan; Bibinov, Nikita; Awakowicz, Peter

    2013-09-01

    For many physical vapor deposition applications using sputtering processes, knowledge about the detailed spatial and temporal evolution of the involved gas species is of great importance. Modeling of the involved gas dynamic and plasma processes is however challenging, because the operating pressure is typically below 1 Pa. In consequence, only kinetic descriptions are appropriate. In order to approach this problem, the dynamics of sputtered particle transport through a neutral gas background is simulated. For this study, a modified version of the three-dimensional Direct Simulation Monte Carlo (DSMC) code dsmcFoam is utilized. The impact of a transient sputtering wind is investigated in a generic reactor geometry, which may be used for dc Magnetron Sputtering (dcMS), High Power Impulse Magnetron Sputtering (HiPIMS), as well as sputtering in capacitively coupled discharges. In the present work a rarefaction of the background gas is observed. Moreover in pulsed mode the temporal dynamics of the rarefaction and subsequent recovery of the background gas is investigated. This work is supported by the German Research Foundation in the frame of TRR 87.

  17. XPS Study of Plasma- and Argon Ion-Sputtered Polytetrafluoroethylene

    NASA Technical Reports Server (NTRS)

    Golub, Morton A.; Kliss, Mark (Technical Monitor)

    1997-01-01

    The similarity of plasma-polymerized tetrafluoroethylene (PPTFE) and the fluoropolymer film deposited by rf (radio frequency) plasma sputtering (SPTFE) of polytetrafluoroethylene (PTFE), noted earlier in the literature, has been reconfirmed. FT-IR (Fourier Transform Infrared), XPS (X ray Photoelectron Spectroscopy) and UV (ultraviolet) spectroscopy has been employed in apparently the first study to involve preparation of PPTFE and SPTFE in the same reactor and under comparable low-power plasma conditions. Most of the work concerned the use of He or Ar as sputtering gas, but some runs were also carried out with the other rare gases Ne, Kr and Xe. The C1s XPS spectra of SPTFE films displayed a relatively higher content of CF2 groups, and yielded higher F/C (fluorine / carbon) ratios, than PPTFE films, while the SPTFE films were somewhat more transparent in the UV than PPTFE. The F/C ratios for SPTFE were essentially independent of the rare gas used for sputtering. Increasing rf power from 10 to 50 W for Xe plasma-sputtering of PTFE resulted in successively lower F/C ratios (1.55 to 1.21), accompanied by sputtering of the glass reactor occurring at 40 W and above. Some limited XPS, FT-IR and UV data are presented on Ar ion-sputtered PTFE.

  18. High power coherent polarization locked laser diode.

    PubMed

    Purnawirman; Phua, P B

    2011-03-14

    We have coherently combined a broad area laser diode array to obtain high power single-lobed output by using coherent polarization locking. The single-lobed coherent beam is achieved by spatially combining four diode emitters using walk-off crystals and waveplates while their phases are passively locked via polarization discrimination. While our previous work focused on coherent polarization locking of diode in Gaussian beams, we demonstrate in this paper, the feasibility of the same polarization discrimination for locking multimode beams from broad area diode lasers. The resonator is designed to mitigate the loss from smile effect by using retro-reflection feedback in the cavity. In a 980 nm diode array, we produced 7.2 W coherent output with M2 of 1.5x11.5. The brightness of the diode is improved by more than an order of magnitude.

  19. Highly-enhanced reflow characteristics of sputter deposited Cu interconnections of large scale integrated devices by optimizing sputtering conditions

    NASA Astrophysics Data System (ADS)

    Onishi, Takashi; Mizuno, Masao; Yoshikawa, Tetsuya; Munemasa, Jun; Mizuno, Masataka; Kihara, Teruo; Araki, Hideki; Shirai, Yasuharu

    2013-07-01

    Improving the reflow characteristics of sputtered Cu films was attempted by optimizing the sputtering conditions. The reflow characteristics of films deposited under various sputtering conditions were evaluated by measuring their filling level in via holes. It was found that the reflow characteristics of the Cu films are strongly influenced by the deposition parameters. Deposition at low temperatures and the addition of H2 or N2 to the Ar sputtering gas had a significant influence on the reflow characteristics. Imperfections in the Cu films before and after the high-temperature, high-pressure treatments were investigated by positron annihilation spectroscopy. The results showed that low temperature and the addition of H2 or N2 led to films containing a large number of mono-vacancies, which accelerate atomic diffusion creep and dislocation core diffusion creep, improving the reflow characteristics of the Cu films.

  20. Effect of Sputtering Temperature on Structure and Optical Properties of NiO Films Fabricated by Magnetron Sputtering

    NASA Astrophysics Data System (ADS)

    Wang, Hui; Zhao, Yang; Li, Xinzhong; Zhen, Zhiqiang; Li, Hehe; Wang, Jingge; Tang, Miaomiao

    2017-03-01

    NiO thin films were deposited on sapphire and Corning 1737 glass substrates using the radio frequency magnetron sputtering system. The structures, optical and electrical properties of NiO films grown under different sputtering temperatures were thoroughly studied. The NiO films were composed of different-size NiO nano-grains with a strong (111) preferred orientation. The NiO grain size increased with the sputtering temperature increase. The band gap values decreased from 3.69 eV to 3.38 eV on the sputtering temperature increase from 30°C to 450°C. Moreover, the electrical property variations of the NiO samples were studied by the Hall effect in detail.

  1. Determination of deposited flux and energy of sputtered tungsten atoms on every stages of transport in HiPIMS discharge

    NASA Astrophysics Data System (ADS)

    Desecures, M.; de Poucques, L.; Bougdira, J.

    2017-02-01

    A time-resolved tunable diode-laser (DL) induced fluorescence (TR-TDLIF) technique has been used to identify different populations of atoms (on different stages of transport) to determine their corresponding deposited energy and flux. The temporal dimension permits the splitting of the processes of sputtering during the discharge and particles transport in the post-discharge where atoms and flux velocity distribution functions (AVDF, FVDF) of each population were measured varying the discharge parameters (power, voltage, pressure, and distance from target). Tungsten (W) was chosen, being an interesting case in terms of sputtered atom transport, considering its weight which implies weak changes of directivity or energy transfer after collisions with the buffer gas. The high temporal and spectral resolutions of TR-TDLIF are the keys for the distinction of the atoms populations and the stage corresponding to the transition from the ballistic to diffusive regime of transport was observed for the first time and named quasi-diffusive regime. Thus, the ability to dissociate populations of atoms and to determine their deposited flux and energy may be of great interest to adjust film properties as desired for applications.

  2. Schlieren with a laser diode source

    NASA Astrophysics Data System (ADS)

    Burner, A. W.; Franke, J. M.

    1981-10-01

    The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

  3. Thermal (Silicon Diode) Data Acquisition Systems

    NASA Technical Reports Server (NTRS)

    Wright, Ernest; Kegley, Jeff

    2008-01-01

    Marshall Space Flight Center s X-ray Cryogenic Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

  4. Thermal (Silicon Diode) Data Acquisition System

    NASA Technical Reports Server (NTRS)

    Kegley, Jeffrey

    2008-01-01

    Marshall Space Flight Center's X-ray Calibration Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

  5. Thermic diode performance characteristics and design manual

    NASA Technical Reports Server (NTRS)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  6. Effects of radiation on laser diodes.

    SciTech Connect

    Phifer, Carol Celeste

    2004-09-01

    The effects of ionizing and neutron radiation on the characteristics and performance of laser diodes are reviewed, and the formation mechanisms for nonradiative recombination centers, the primary type of radiation damage in laser diodes, are discussed. Additional topics include the detrimental effects of aluminum in the active (lasing) volume, the transient effects of high-dose-rate pulses of ionizing radiation, and a summary of ways to improve the radiation hardness of laser diodes. Radiation effects on laser diodes emitting in the wavelength region around 808 nm are emphasized.

  7. Advances in high power semiconductor diode lasers

    NASA Astrophysics Data System (ADS)

    Ma, Xiaoyu; Zhong, Li

    2008-03-01

    High power semiconductor lasers have broad applications in the fields of military and industry. Recent advances in high power semiconductor lasers are reviewed mainly in two aspects: improvements of diode lasers performance and optimization of packaging architectures of diode laser bars. Factors which determine the performance of diode lasers, such as power conversion efficiency, temperature of operation, reliability, wavelength stabilization etc., result from a combination of new semiconductor materials, new diode structures, careful material processing of bars. The latest progress of today's high-power diode lasers at home and abroad is briefly discussed and typical data are presented. The packaging process is of decisive importance for the applicability of high-power diode laser bars, not only technically but also economically. The packaging techniques include the material choosing and the structure optimizing of heat-sinks, the bonding between the array and the heat-sink, the cooling and the fiber coupling, etc. The status of packaging techniques is stressed. There are basically three different diode package architectural options according to the integration grade. Since the package design is dominated by the cooling aspect, different effective cooling techniques are promoted by different package architectures and specific demands. The benefit and utility of each package are strongly dependent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlined and comparisons of packaging approaches for these materials are made. Modularity of package for special application requirements is an important developing tendency for high power diode lasers.

  8. Excess noise in tunable diode lasers

    NASA Technical Reports Server (NTRS)

    Rowland, C. W.

    1981-01-01

    The method and the apparatus for identifying excess-noise regions in tunable diode lasers are described. These diode lasers exhibit regions of excess noise as their wavelength is tuned. If a tunable diode laser is to be used as a local oscillator in a superheterodyne optical receiver, these excess-noise regions severely degrade the performance of the receiver. Measurement results for several tunable diode lasers are given. These results indicate that excess noise is not necessarily associated with a particular wavelength, and that it is possible to select temperature and injection current such that the most ideal performance is achieved.

  9. Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

    NASA Technical Reports Server (NTRS)

    Barghouty, Abdulmasser F.; Adams, James H., Jr.

    2008-01-01

    At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

  10. Direct measurements of classical and enhanced gradient-aligned cross-field ion flows in a helicon plasma source using laser-induced fluorescence

    SciTech Connect

    Siddiqui, M. Umair Thompson, Derek S.; McIlvain, Julianne M.; Short, Zachary D.; Scime, Earl E.

    2015-12-15

    Direct laser induced fluorescence measurements are shown of cross-field ion flows normal to an absorbing boundary that is aligned parallel to the axial magnetic field in a helicon plasma. We show Langmuir and emissive probe measurements of local density and plasma potential in the same region, as well as floating probe spectra near the boundary. With these measurements, we investigate the influence of ion-neutral collisionality on radial ion transport by varying the ratio of the ion gyro-radius, ρ{sub i}, to the ion-neutral collision length, λ, over the range 0.34 ≤ ρ{sub i}λ{sup −1} ≤ 1.60. Classical drift-diffusion transport along density and potential gradients is sufficient to describe flow profiles for most cases. For two parameter regimes (ρ{sub i}λ{sup −1} = 0.65 and 0.44), low-frequency electrostatic fluctuations (f < 10 kHz) and enhanced cross-field bulk ion flow to the boundary are observed.

  11. Magnetic moment and local magnetic induction of superconducting/ferromagnetic structures subjected to crossed fields: experiments on GdBCO and modelling

    NASA Astrophysics Data System (ADS)

    Fagnard, J. F.; Morita, M.; Nariki, S.; Teshima, H.; Caps, H.; Vanderheyden, B.; Vanderbemden, P.

    2016-12-01

    Recent studies have shown that ferromagnetic materials can be used together with bulk high temperature superconductors in order to improve their magnetic trapped field. Remarkably, it has also been pointed out that ferromagnets can help in reducing the crossed field effect, namely the magnetization decay that is observed under the application of AC transverse magnetic fields. In this work, we pursue a detailed study of the influence of the geometry of the ferromagnetic part on both trapped fields and crossed field effects. The magnetic properties of the hybrid superconducting/soft ferromagnetic structures are characterized by measuring the magnetic moment with a bespoke magnetometer and the local magnetic field density with Hall probes. The results are interpreted by means of 2D and 3D numerical models yielding the distribution of the superconducting currents as a function of the ferromagnet geometry. We examine in details the distortion of the shielding superconducting currents distribution in hybrid structures subjected to crossed magnetic fields. These results confirm the existence of an optimum thickness of the ferromagnet, which depends on the saturation magnetization of the ferromagnetic material and the current density of the superconductor. A hybrid structure providing an efficient protection against the crossed magnetic field while maintaining the magnetic induction along the axis of the structure is suggested. The limitations of the 2D modelling in this configuration are discussed.

  12. Annealing of gold nanostructures sputtered on polytetrafluoroethylene

    PubMed Central

    2011-01-01

    Gold nanolayers sputtered on polytetrafluoroethylene (PTFE) surface and their changes induced by post-deposition annealing at 100°C to 300°C are studied. Changes in surface morphology and roughness are examined by atomic force microscopy, electrical sheet resistance by two point technique, zeta potential by electrokinetic analysis and chemical composition by X-ray photoelectron spectroscopy (XPS) in dependence on the gold layer thickness. Transition from discontinuous to continuous gold coverage takes place at the layer thicknesses 10 to 15 nm and this threshold remains practically unchanged after the annealing at the temperatures below 200°C. The annealing at 300°C, however, leads to significant rearrangement of the gold layer and the transition threshold increases to 70 nm. Significant carbon contamination and the presence of oxidized structures on gold-coated samples are observed in XPS spectra. Gold coating leads to a decrease in the sample surface roughness. Annealing at 300°C of pristine PTFE and gold-coated PTFE results in significant increase of the sample surface roughness. PMID:22078024

  13. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1985-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  14. Thick beryllium coatings by magnetron sputtering

    SciTech Connect

    Wu, H; Nikroo, A; Youngblood, K; Moreno, K; Wu, D; Fuller, T; Alford, C; Hayes, J; Detor, A; Wong, M; Hamza, A; van Buuren, T; Chason, E

    2011-04-14

    Thick (>150 {micro}m) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility (NIF). As an added complication, the coatings are deposited on mm-scale spherical substrates, as opposed to flats. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. We used ultra small angle x-ray spectroscopy (USAXS) to characterize the void fraction and distribution along the spherical surface. We investigated the void structure using a combination focused ion beam (FIB) and scanning electron microscope (SEM), along with transmission electron microscopy (TEM). Our results show a few volume percent of voids and a typical void diameter of less than two hundred nanometers. Understanding how the stresses in the deposited material develop with thickness is important so that we can minimize film cracking and delamination. To that end, an in-situ multiple optical beam stress sensor (MOSS) was used to measure the stress behavior of thick Beryllium coatings on flat substrates as the material was being deposited. We will show how the film stress saturates with thickness and changes with pressure.

  15. Ion beam sputter deposited zinc telluride films

    NASA Technical Reports Server (NTRS)

    Gulino, D. A.

    1986-01-01

    Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

  16. Multi-cathode unbalanced magnetron sputtering systems

    NASA Technical Reports Server (NTRS)

    Sproul, William D.

    1991-01-01

    Ion bombardment of a growing film during deposition is necessary in many instances to ensure a fully dense coating, particularly for hard coatings. Until the recent advent of unbalanced magnetron (UBM) cathodes, reactive sputtering had not been able to achieve the same degree of ion bombardment as other physical vapor deposition processes. The amount of ion bombardment of the substrate depends on the plasma density at the substrate, and in a UBM system the amount of bombardment will depend on the degree of unbalance of the cathode. In multi-cathode systems, the magnetic fields between the cathodes must be linked to confine the fast electrons that collide with the gas atoms. Any break in this linkage results in electrons being lost and a low plasma density. Modeling of the magnetic fields in a UBM cathode using a finite element analysis program has provided great insight into the interaction between the magnetic fields in multi-cathode systems. Large multi-cathode systems will require very strong magnets or many cathodes in order to maintain the magnetic field strength needed to achieve a high plasma density. Electromagnets offer the possibility of independent control of the plasma density. Such a system would be a large-scale version of an ion beam enhanced deposition (IBED) system, but, for the UBM system where the plasma would completely surround the substrate, the acronym IBED might now stand for Ion Blanket Enhanced Deposition.

  17. Sputtered Thallium-Barium Superconducting Thin Films

    NASA Astrophysics Data System (ADS)

    Wu, Changyao

    Thin films, a necessary form of materials for most sensors and electronic applications, of Tl-Ba-Ca-Cu -O have been studied. The samples were prepared by the precursor method. Precursor films of Ba-Ca-Cu-O were first deposited on the single crystal substrates of MgO, LaAlO _3, and SrTiO_3 by rf-magnetron sputtering. The following heat-treatment facilitated the incorporation of thallium into the precursor films and proper phase formation. Processing variables were systematically studied and the resulting films were characterized by X-ray diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy. Superconducting microbridges patterned by photolithography and wet chemical etching were used for R-T and I-V characteristics measurements. The resistive broadening of superconducting transition under magnetic fields was discussed in the framework of Anderson -Kim flux-creep theory. The activation energy for the flux -creep appears to be of functional form rm U_{o}~(1-T/ rm T_{c})/B^{1/2}. .

  18. Fuzzy tungsten in a magnetron sputtering device

    NASA Astrophysics Data System (ADS)

    Petty, T. J.; Khan, A.; Heil, T.; Bradley, J. W.

    2016-11-01

    Helium ion induced tungsten nanostructure (tungsten fuzz) has been studied in a magnetron sputtering device. Three parameters were varied, the fluence from 3.4 × 1023-3.0 × 1024 m-2, the He ion energy from 25 to 70 eV, and the surface temperature from 900 to 1200 K. For each sample, SEM images were captured, and measurements of the fuzz layer thickness, surface roughness, reflectivity, and average structure widths are provided. A cross-over point from pre-fuzz to fully formed fuzz is found at 2.4 ± 0.4 × 1024 m-2, and a temperature of 1080 ± 60 K. No significant change was observed in the energy sweep. The fuzz is compared to low fluence fuzz created in the PISCES-A linear plasma device. Magnetron fuzz is less uniform than fuzz created by PISCES-A and with generally larger structure widths. The thicknesses of the magnetron samples follow the original Φ1/2 relation as opposed to the incubation fluence fit.

  19. Design, Fabrication and Characterization of MIM Diodes and Frequency Selective Thermal Emitters for Solar Energy Harvesting and Detection Devices

    NASA Astrophysics Data System (ADS)

    Sharma, Saumya

    Energy harvesting using rectennas for infrared radiation continues to be a challenge due to the lack of fast switching diodes capable of rectification at THz frequencies. Metal insulator metal diodes which may be used at 30 THz must show adequate nonlinearity for small signal rectification such as 30 mV. In a rectenna assembly, the voltage signal received as an output from a single nanoantenna can be as small as ~30microV. Thus, only a hybrid array of nanoantennas can be sufficient to provide a signal in the ~30mV range for the diode to be able to rectify around 30THz. A metal-insulator-metal diode with highly nonlinear I-V characteristics is required in order for such small signal rectification to be possible. Such diode fabrication was found to be faced with two major fabrication challenges. The first one being the lack of a precisely controlled deposition process to allow a pinhole free insulator deposition less than 3nm in thickness. Another major challenge is the deposition of a top metal contact on the underlying insulating thin film. As a part of this research study, most of the MIM diodes were fabricated using Langmuir Blodgett monolayers deposited on a thin Ni film that was sputter coated on a silicon wafer. UV induced polymerization of the Langmuir Blodgett thin film was used to allow intermolecular crosslinking. A metal top contact was sputtered onto the underlying Langmuir Blodgett film assembly. In addition to material characterization of all the individual films using IR, UV-VIS spectroscopy, electron microscopy and atomic force microscopy, the I-V characteristics, resistance, current density, rectification ratio and responsivity with respect to the bias voltage were also measured for the electrical characterization of these MIM diodes. Further improvement in the diode rectification ratio and responsivity was obtained with Langmuir Blodgett films grown by the use of horizontally oriented organic molecules, due to a smaller tunneling distance that

  20. The role of surface microstructure in the sputtering of graphite

    SciTech Connect

    Youchison, D.L.; Nahemow, M.D. ); McGrath, R.T. ); Baratta, A.J. )

    1991-05-01

    Extensive exposure to tokamak plasmas may result in significant alterations to the surface microstructure of graphite plasma-facing components. A change in microstructure from a commercial isotropic graphite to an amorphous carbon film may produce a significant change in the total sputtering yield and the level of plasma contamination. To investigate this sensitivity to surface microstructure, sputtering experiments on a variety of graphites with various surface structures were performed using the ion--surface interaction system (ISIS).{sup 1} ISIS is a computerized ion beam sputtering system equipped with twin quartz crystal microbalances capable of simultaneously monitoring both sputtering and redeposition of the beam target material. ISIS was used to obtain sputtering data on two orientations of pyrolytic graphite at seven energies between 100 eV and 10 keV. Helium bombardment perpendicular to the prism plane produced yields 2 to 7 times higher than on the basal plane. Proton bombardment perpendicular to the prism plane produced yields 45% higher than those on the basal plane. Amorphous graphite films produced from Poco AXF-5Q and Union Carbide ATJ graphites using an argon radio-frequency (rf) plasma discharge were also irradiated. Sputtering yields on the amorphous films were as much as 50% to an order of magnitude higher than those measured on commercial bulk samples. Pre and post-irradiation scanning electron microscopy of selected targets was performed to monitor surface microstructure. A structural mechanism responsible for the magnitude of physical sputtering is suggested, and an effective surface binding energy is introduced to quantify this structural dependence.

  1. Xenon Sputter Yield Measurements for Ion Thruster Materials

    NASA Technical Reports Server (NTRS)

    Williams, John D.; Gardner, Michael M.; Johnson, Mark L.; Wilbur, Paul J.

    2003-01-01

    In this paper, we describe a technique that was used to measure total and differential sputter yields of materials important to high specific impulse ion thrusters. The heart of the technique is a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. Differential sputtering yields were generally measured over a full 180 deg arc in a plane that included the beam centerline and the normal vector to the target surface. Sputter yield results are presented for a xenon ion energy range from 0.5 to 10 keV and an angle of incidence range from 0 deg to 70 deg from the target surface normal direction for targets consisting of molybdenum, titanium, solid (Poco) graphite, and flexible graphite (grafoil). Total sputter yields are calculated using a simple integration procedure and comparisons are made to sputter yields obtained from the literature. In general, the agreement between the available data is good. As expected for heavy xenon ions, the differential and total sputter yields are found to be strong functions of angle of incidence. Significant under- and over-cosine behavior is observed at low- and high-ion energies, respectively. In addition, strong differences in differential yield behavior are observed between low-Z targets (C and Ti) and high-Z targets (Mo). Curve fits to the differential sputter yield data are provided. They should prove useful to analysts interested in predicting the erosion profiles of ion thruster components and determining where the erosion products re-deposit.

  2. Sputter-depth profiling for thin-film analysis.

    PubMed

    Hofmann, S

    2004-01-15

    Following a brief historical background, the concepts and the present state of sputter-depth profiling for thin-film analysis are outlined. There are two main branches: either the removed matter (as in mass- or optical-spectroscopy-based secondary-ion mass spectrometry or glow-discharge optical emission spectroscopy), or the remaining surface (as in Auger electron spectroscopy and X-ray photoelectron spectroscopy) is characterized. These complementary methods show the same result if there is no preferential sputtering of a component. The common root of both is the fundamental ion-solid interaction. Understanding of how the latter influences the depth resolution has led to important improvements in experimental profiling conditions such as sample rotation and the use of low-energy ions at glancing incidence. Modern surface-analysis instruments can provide high-resolution depth profiles on the nanometre scale. Mathematical models of different sophistication were developed to allow deconvolution of the measured profile or quantification by reconstruction of the in-depth distribution of composition. For the latter purpose, the usefulness of the so-called mixing-roughness-information (MRI) depth model is outlined on several thin-film structures (e.g. AlAs/GaAs and Si/Ge), including its extension to quantification of sputter-depth profiles in layer structures with preferential sputtering of one component (Ta/Si). Using the MRI model, diffusion coefficients at interfaces as low as 10(-22) m(2) s(-1) can be determined. Fundamental limitations of sputter-depth profiling are mainly traced back to the stochastic nature of primary-particle energy transfer to the sputtered particle, promoting atomic mixing and the development of surface roughness. Owing to more sophisticated experimental methods, such as low-energy cluster ion bombardment, glancing ion incidence or 'backside' sputtering, these ultimate limitations can be reduced to the atomic monolayer scale.

  3. Development of magnetron sputtering simulator with GPU parallel computing

    NASA Astrophysics Data System (ADS)

    Sohn, Ilyoup; Kim, Jihun; Bae, Junkyeong; Lee, Jinpil

    2014-12-01

    Sputtering devices are widely used in the semiconductor and display panel manufacturing process. Currently, a number of surface treatment applications using magnetron sputtering techniques are being used to improve the efficiency of the sputtering process, through the installation of magnets outside the vacuum chamber. Within the internal space of the low pressure chamber, plasma generated from the combination of a rarefied gas and an electric field is influenced interactively. Since the quality of the sputtering and deposition rate on the substrate is strongly dependent on the multi-physical phenomena of the plasma regime, numerical simulations using PIC-MCC (Particle In Cell, Monte Carlo Collision) should be employed to develop an efficient sputtering device. In this paper, the development of a magnetron sputtering simulator based on the PIC-MCC method and the associated numerical techniques are discussed. To solve the electric field equations in the 2-D Cartesian domain, a Poisson equation solver based on the FDM (Finite Differencing Method) is developed and coupled with the Monte Carlo Collision method to simulate the motion of gas particles influenced by an electric field. The magnetic field created from the permanent magnet installed outside the vacuum chamber is also numerically calculated using Biot-Savart's Law. All numerical methods employed in the present PIC code are validated by comparison with analytical and well-known commercial engineering software results, with all of the results showing good agreement. Finally, the developed PIC-MCC code is parallelized to be suitable for general purpose computing on graphics processing unit (GPGPU) acceleration, so as to reduce the large computation time which is generally required for particle simulations. The efficiency and accuracy of the GPGPU parallelized magnetron sputtering simulator are examined by comparison with the calculated results and computation times from the original serial code. It is found that

  4. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

    NASA Astrophysics Data System (ADS)

    Ueno, Kohei; Kishikawa, Eiji; Ohta, Jitsuo; Fujioka, Hiroshi

    2017-02-01

    High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101 ¯ 2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6 μ m . Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016-2 × 1018 cm-3 and 2-9 cm2V-1s-1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

  5. Nanofluidic diode and bipolar transistor.

    PubMed

    Daiguji, Hirofumi; Oka, Yukiko; Shirono, Katsuhiro

    2005-11-01

    Theoretical modeling of ionic distribution and transport in a nanochannel containing a surface charge on its wall, 30 nm high and 5 microm long, suggests that ionic current can be controlled by locally modifying the surface charge density through a gate electrode, even if the electrical double layers are not overlapped. When the surface charge densities at the right and left halves of a channel are the same absolute value but of different signs, this could form the basis of a nanofluidic diode. When the surface charge density at the middle part of a channel is modified, this could form the basis of a nanofluidic bipolar transistor.

  6. High power, high reliability laser diodes

    NASA Astrophysics Data System (ADS)

    Scifres, D. R.; Welch, D. F.; Craig, R. R.; Zucker, E.; Major, J. S.; Harnagel, G. L.; Sakamoto, M.; Haden, J. M.; Endriz, J. G.; Kung, H.

    1992-06-01

    Results are presented on catastrophic damage limits and life-test measurements for four types of high-power laser diodes operating at wavelengths between 980 nm and 690 nm. The laser diodes under consideration are CW multimode lasers, CW laser bars, quasi-CW bars/2D stacked arrays, and single transverse mode lasers.

  7. Semiconductor diode with external field modulation

    DOEpatents

    Nasby, Robert D.

    2000-01-01

    A non-destructive-readout nonvolatile semiconductor diode switching device that may be used as a memory element is disclosed. The diode switching device is formed with a ferroelectric material disposed above a rectifying junction to control the conduction characteristics therein by means of a remanent polarization. The invention may be used for the formation of integrated circuit memories for the storage of information.

  8. Self-Injection Locking Of Diode Lasers

    NASA Technical Reports Server (NTRS)

    Hemmati, H.

    1991-01-01

    Simple optical coupling scheme locks array of gain-guided diode lasers into oscillation in single mode and with single-lobed output beam. Selective feedback from thin etalon self-injection-locks array into desired mode. One application of new scheme for pumping of neodymium: yttrium aluminum garnet lasers with diode-laser arrays.

  9. Demonstrating the Light-Emitting Diode.

    ERIC Educational Resources Information Center

    Johnson, David A.

    1995-01-01

    Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

  10. High power diode and solid state lasers

    NASA Astrophysics Data System (ADS)

    Eichler, H. J.; Fritsche, H.; Lux, O.; Strohmaier, S. G.

    2017-01-01

    Diode lasers are now basic pump sources of crystal, glass fiber and other solid state lasers. Progress in the performance of all these lasers is related. Examples of recently developed diode pumped lasers and Raman frequency converters are described for applications in materials processing, Lidar and medical surgery.

  11. Chemical modification of sputtered amorphous-carbon surfaces

    NASA Astrophysics Data System (ADS)

    Leezenberg, Pieter B.; Johnston, William H.; Tyndall, George W.

    2001-03-01

    Methods to chemically passivate the surfaces of amorphous-carbon films (a-C) produced by dc magnetron sputtering were studied. The chemical composition of carbon surfaces produced via sputtering are dependent upon the environment to which the carbon is exposed immediately following deposition. When the sputtered film is vented to ambient conditions, free radicals produced at the surface during the deposition process are quenched by reaction with oxygen and/or water to form an oxidized, hydrophilic surface. If the sputtered carbon film is, however, exposed to a reactive gas prior to venting to ambient, the chemical nature of the resulting surface can be modified substantially. Specifically, a less highly oxidized and much more hydrophobic carbon surface is produced when the surface free radicals are quenched via either an addition reaction (demonstrated with a fluorinated olefin) or a hydrogen abstraction reaction (demonstrated with two alkyl amines). Chemical modification of amorphous-carbon films can also be accomplished by performing the sputtering in a reactive plasma formed from mixtures of argon with molecular hydrogen, amines, and perfluorocarbons. The elemental composition of these films, and the relative reactivity of the surfaces formed, were investigated via x-ray photoelectron spectroscopy and contact-angle goniometry, respectively. In the case of sputtering with a mixture of argon and hydrogen, increasing the hydrogen flow results in an increase in the amount of hydrogen incorporated into the carbon film and a decrease in the surface free energy. Sputtering in diethylamine produces an amorphous-carbon film into which nitrogen is incorporated. The free energies of the a-C:N surfaces produced in this process are similar to those of the a-C:H films. Sputtering in a fluorocarbon vapor results in the incorporation of fluorine into the film structure and the formation of very low free-energy surfaces. Increasing the concentration of the fluorocarbon in the

  12. Sputter deposition of nanocrystalline beta-SiC films and molecular dynamics simulations of the sputter process.

    PubMed

    Ziebert, Carlos; Ye, Jian; Ulrich, Sven; Prskalo, Alen-Pilip; Schmauder, Siegfried

    2010-02-01

    Thin nanocrystalline films of silicon carbide (SiC) have been deposited on Si substrates by rf magnetron sputtering in pure Ar atmosphere. Simultaneously classical molecular dynamics (MD) simulations of sputtering of beta-SiC by Ar atoms were performed using IMD and Materials Explorer software with a combination of the Tersoff and the Ziegler-Biersack-Littmark (ZBL) potential in order to get more insight into the sputter process. In experiments the bias voltage (0 to -40 V) has been varied at constant substrate temperature of 900 degrees C to investigate the influence on the composition, the constitution and the mechanical properties of crystalline beta-SiC films. At second the substrate temperature has been varied between 900 degrees C and 100 degrees C to find the minimum substrate temperature that is needed to get nanocrystalline beta-SiC under the applied sputter conditions (ceramic SiC target, 300 W rf power, 18 cm target-substrate distance, 50 sccm Ar gas flow, 0.26 Pa total gas pressure). The films have been characterized by electron probe micro-analysis (EPMA), X-ray diffraction (XRD), Raman spectroscopy and atomic force microscopy (AFM). Hardness and residual stress have been investigated by nanoindentation and wafer bending. In the MD simulations the sputter yield was determined as a function of the energy of the incident Ar atoms (in the interesting range for sputter deposition, i.e., 50-1000 eV). To our knowledge this is the first time that the sputter yield of a SiC target was determined as a function of the energy of the incident Ar atoms in the low energy range by using MD simulations and compared with experimental results.

  13. Reconstructing accurate ToF-SIMS depth profiles for organic materials with differential sputter rates.

    PubMed

    Taylor, Adam J; Graham, Daniel J; Castner, David G

    2015-09-07

    To properly process and reconstruct 3D ToF-SIMS data from systems such as multi-component polymers, drug delivery scaffolds, cells and tissues, it is important to understand the sputtering behavior of the sample. Modern cluster sources enable efficient and stable sputtering of many organics materials. However, not all materials sputter at the same rate and few studies have explored how different sputter rates may distort reconstructed depth profiles of multicomponent materials. In this study spun-cast bilayer polymer films of polystyrene and PMMA are used as model systems to optimize methods for the reconstruction of depth profiles in systems exhibiting different sputter rates between components. Transforming the bilayer depth profile from sputter time to depth using a single sputter rate fails to account for sputter rate variations during the profile. This leads to inaccurate apparent layer thicknesses and interfacial positions, as well as the appearance of continued sputtering into the substrate. Applying measured single component sputter rates to the bilayer films with a step change in sputter rate at the interfaces yields more accurate film thickness and interface positions. The transformation can be further improved by applying a linear sputter rate transition across the interface, thus modeling the sputter rate changes seen in polymer blends. This more closely reflects the expected sputtering behavior. This study highlights the need for both accurate evaluation of component sputter rates and the careful conversion of sputter time to depth, if accurate 3D reconstructions of complex multi-component organic and biological samples are to be achieved. The effects of errors in sputter rate determination are also explored.

  14. Sputter deposition with nearly-parallel coating flux

    SciTech Connect

    Patten, J.W.; McClanahan, E.D.; Moss, R.W.; Bayne, M.A.

    1981-04-01

    A method for producing a dense, nearly-parallel flux of sputtered atoms is described. This method allows sputter depositing films having substantially 100% of theoretical density. The sputtering chamber contains a target having a surface that is substantially parallel to the direction of the particles impinging upon the substrate surface, the distance between the most remote portion of the substrate surface receiving the particles and the target surface emitting the particles in a direction parallel to the substrate surface being relatively small. The pressure in the vessel is maintained less than about .65 Pa to limit scattering and permit line-of-sight deposition. The angles of incidence of the particles impinging upon the substrate surface do not vary greatly even when the target surface area is greatly expanded to increase the deposition rate. An experimental sputtering system is described. Deposition rates are given as a function of distance from the target edge and distance from the target plane. Metallography of sputter deposited Ni is presented.

  15. EMI shielding using composite materials with two sources magnetron sputtering

    NASA Astrophysics Data System (ADS)

    Ziaja, J.; Jaroszewski, M.; Lewandowski, M.

    2016-02-01

    In this study, the preparation composite materials for electromagnetic shields using two sources magnetron sputtering DC-M is presented. A composite material was prepared by coating a nonwoven polypropylene metallic layer in sputtering process of targets Ti (purity 99%) and brass alloy MO58 (58%Cu, 40%Zn, 2%Pb) and ϕ diameter targets = 50 mm, under argon atmosphere. The system with magnetron sputtering sources was powered using switch-mode power supply DPS (Dora Power System) with a maximum power of 16 kW and a maximum voltage of 1.2 kV with group frequency from 50 Hz to 5 kHz. The influence of sputtering time of individual targets on the value of the EM field attenuation SE [dB] was investigated for the following supply conditions: pressure pp = 2x10-3 Torr, sputtering power P = 750 W, the time of applying a layer t = 5 min, group frequency fg = 2 kHz, the frequency of switching between targets fp = 1 Hz.

  16. Dynamical simulation of sputtering and reflection from a ternary alloy

    NASA Astrophysics Data System (ADS)

    Ishida, M.; Yamaguchi, Y.; Yoshinaga, H.; Yamamura, Y.

    The sputtering and the reflection from a Tb0.2Fe0.7Co0.1 alloy due to Ar+ ion bombardment have been investigated by the Monte Carlo simulation code ACAT-DIFFUSE which include the compositional change induced by ion influence. In the Tb-Fe-Co system, Fe atoms are preferentially sputtered. The atomic size of a Tb atom is the largest of these three atoms, and so Tb atoms trap preferentially in vacancies. The steady-state concentration of Tb atoms at the topmost layer is larger than the bulk concentration for the low energy ions due to radiation-induced segregation and preferential sputtering of Fe atoms. As the ion fluence increases, the atomic fractions of sputtered atoms calculated by the ACAT-DIFFUSE code become those of the bulk concentration. The depth profiles of each element at the steady state depend on the incident energy. The total sputtering yield and the reflection coefficient from a Tb-Fe-Co alloy calculated by the ACAT-DIFFUSE code are larger than those by the ACAT code at near-threshold energies, where the ACAT code does not include the ion-influence effect. The energy spectra of back-scattered Ar atoms from the present ternary alloy have very similar profiles to those from a monoatomic Tb target, especially for low-energy Ar+ ions.

  17. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, A.R.; Auciello, O.

    1990-05-08

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams. 10 figs.

  18. Sputter deposition for multi-component thin films

    DOEpatents

    Krauss, Alan R.; Auciello, Orlando

    1990-01-01

    Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film. In another embodiment, the ion beam is directed through an aperture in the deposition plate and is displaced under computer control to provide a high degree of control over the deposited layer. In yet another embodiment, a single fixed ion beam is directed onto a plurality of sputter targets in a sequential manner where the targets are each moved in alignment with the beam under computer control in forming a multilayer thin film. This controlled sputter-deposition approach may also be used with laser and electron beams.

  19. Reactive high power impulse magnetron sputtering: combining simulation and experiment

    NASA Astrophysics Data System (ADS)

    Kozak, Tomas; Vlcek, Jaroslav

    2016-09-01

    Reactive high-power impulse magnetron sputtering (HiPIMS) has recently been used for preparation of various oxide films with high application potential, such as TiO2, ZrO2, Ta2O5, HfO2, VO2. Using our patented method of pulsed reactive gas flow control with an optimized reactive gas inlet, we achieved significantly higher deposition rates compared to typical continuous dc magnetron depositions. We have developed a time-dependent model of the reactive HiPIMS. The model includes a depth-resolved description of the sputtered target (featuring sputtering, implantation and knock-on implantation processes) and a parametric description of the discharge plasma (dissociation of reactive gas, ionization and return of sputtered atoms and gas rarefaction). The model uses a combination of experimental and simulation data as input. We have calculated the composition of the target and substrate for several deposition conditions. The simulations predict a reduced compound coverage of the target in HiPIMS compared to the continuous dc sputtering regime which explains the increased deposition rate. The simulations show that an increased dissociation of oxygen in a HiPIMS discharge is beneficial to achieve stoichiometric films on the substrate at high deposition rates.

  20. Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

    PubMed

    Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

    2016-08-01

    Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016.

  1. Simple model of surface roughness for binary collision sputtering simulations

    NASA Astrophysics Data System (ADS)

    Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

    2017-02-01

    It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

  2. Solar wind sputtering effects in the Martian atmosphere

    NASA Technical Reports Server (NTRS)

    Watson, C. C.; Haff, P. K.; Kellogg, W. K.

    1979-01-01

    A Monte Carlo simulation of the sputtering of the upper atmosphere of Mars by the solar wind was performed. The calculated sputtering yields imply loss rates (molecules/cm square - sec escaping the planet) for carbon dioxide, carbon, and oxygen of R(CO2) = 2.6 X 1000000/cm square - sec, R(C) = 6.6 X 1000000/cm square - sec, and R(O) = 7.7 X 1000000/cm - sec. The total mass loss by sputtering is only about 10% of that due to chemical and photo-chemical processes, but sputtering provides a major exospheric sink for carbon. The erosion process described here preferentially removes the lighter components of the atmosphere. Calculations based on a Monte Carlo simulation suggest that for a model atmosphere, 97% of the N2 and 33% of the CO2 originally present may have been sputtered away over 4.5 X 10 to the 9th power y. In the same length of time the (15)N/(14)N isotopic ratio for the bulk atmosphere would have increased by a factor 1.7.

  3. Laser diode package with enhanced cooling

    DOEpatents

    Deri, Robert J.; Kotovsky, Jack; Spadaccini, Christopher M.

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  4. Laser diode package with enhanced cooling

    SciTech Connect

    Deri, Robert J; Kotovsky, Jack; Spadaccini, Christopher M

    2012-06-12

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  5. Laser diode package with enhanced cooling

    SciTech Connect

    Deri, Robert J; Kotovsky, Jack; Spadaccini, Christopher M

    2012-06-26

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  6. Broadband light-emitting diode

    DOEpatents

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1998-07-14

    A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

  7. Broadband light-emitting diode

    DOEpatents

    Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

    1998-01-01

    A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

  8. Hermetic diode laser transmitter module

    NASA Astrophysics Data System (ADS)

    Ollila, Jyrki; Kautio, Kari; Vahakangas, Jouko; Hannula, Tapio; Kopola, Harri K.; Oikarinen, Jorma; Sivonen, Matti

    1999-04-01

    In very demanding optoelectronic sensor applications it is necessary to encapsulate semiconductor components hermetically in metal housings to ensure reliable operation of the sensor. In this paper we report on the development work to package a laser diode transmitter module for a time- off-light distance sensor application. The module consists of a lens, laser diode, electronic circuit and optomechanics. Specifications include high acceleration, -40....+75 degree(s)C temperature range, very low gas leakage and mass-production capability. We have applied solder glasses for sealing optical lenses and electrical leads hermetically into a metal case. The lens-metal case sealing has been made by using a special soldering glass preform preserving the optical quality of the lens. The metal housings are finally sealed in an inert atmosphere by welding. The assembly concept to retain excellent optical power and tight optical axis alignment specifications is described. The reliability of the laser modules manufactured has been extensively tested using different aging and environmental test procedures. Sealed packages achieve MIL- 883 standard requirements for gas leakage.

  9. Composite photopolymerization with diode laser.

    PubMed

    Knezevic, Alena; Ristic, Mira; Demoli, Nazif; Tarle, Zrinka; Music, Svetozar; Negovetic Mandic, Visnja

    2007-01-01

    Under clinical conditions, the time needed for the proper light curing of luting composites or the multi-incremental buildup of a large restoration with halogen curing units is quite extensive. Due to the development of high power curing devices, such as argon lasers and plasma arc lights and, in order to decrease curing time, halogen and LED devices have developed a high intensity polymerization mode. This study compared the degree of conversion using Fourier Transform Infrared Spectroscopy (FT-IR) of two composite materials: Tetric Ceram and Tetric EvoCeram polymerized with three polymerization modes (high, low and soft mode) of a Bluephase 16i LED curing unit and blue diode laser intensity of 50 mW on the output of the laser beam and 35 mW/cm2 on the resin composite sample. Descriptive statistic, t-test, ANOVA, Pearson Correlation and Tukey Post hoc tests were used for statistical analyses. The results show a higher degree of conversion for the polymerization of composite samples with all photopolymerization modes of the LED curing unit. However, there is no significant difference in the degree of conversion between the LED unit and 50-second polymerization with the blue diode laser. Tetric EvoCeram shows a lower degree of conversion regardless of the polymerization mode (or light source) used.

  10. Sixty GHz IMPATT diode development

    NASA Technical Reports Server (NTRS)

    Ma, Y. E.; Chen, J.; Benko, E.; Barger, M. J.; Nghiem, H.; Trinh, T. Q.; Kung, J.

    1985-01-01

    The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation.

  11. Impact of preparation condition of ZnO electron transport layer on performance of hybrid organic-inorganic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Huang, Chun-Yuan; Yang, Chih-Chiang; Yu, Hsin-Chieh; Chen, Ying-Chih

    2014-02-01

    In this article, we have demonstrated the hybrid polymer light-emitting diodes (PLEDs) with a sol-gel derived or rf-sputtered ZnO electron transport layer (ETL). For the ZnO films prepared under different conditions, low annealing temperature (300 °C) leads to the film amorphous while the polycrystalline films is readily achieved by sputtering. Though the surface roughness can be improved by thermal annealing at 400 °C for sputtered films, the release of compressive stress after treatment has shrunk the optical band gap from 3.282 to 3.268 eV. As the ETL in PLEDs, the reduced band gap could increase potential barrier for electron injection and decrease the hole blocking capability. In our cases, luminance larger than 7000 cd/m2 can be obtained in device with pristine sputtered ZnO ETL. It is concluded that crystalline structure of ZnO films is important to facilitate the balance of carrier mobility to obtain high luminance and high efficiency devices.

  12. High power impulse magnetron sputtering: Current-voltage-timecharacteristics indicate the onset of sustained self-sputtering

    SciTech Connect

    Anders, Andre; Andersson, Joakim; Ehiasarian, Arutiun

    2007-08-03

    The commonly used current-voltage characteristics are foundinadequate for describing the pulsed nature of the high power impulsemagnetron sputtering (HIPIMS) discharge, rather, the description needs tobe expanded to current-voltage-time characteristics for each initial gaspressure. Using different target materials (Cu, Ti, Nb, C, W, Al, Cr) anda pulsed constant-voltage supply it is shown that the HIPIMS dischargestypically exhibit an initial pressure dependent current peak followed bya second phase that is power and material dependent. This suggests thatthe initial phase of a HIPIMS discharge pulse is dominated by gas ionswhereas the later phase has a strong contribution from self-sputtering.For some materials the discharge switches into a mode of sustainedself-sputtering. The very large differences between materials cannot beascribed to the different sputter yields but they indicate thatgeneration and trapping ofsecondary electrons plays a major role forcurrent-voltage-time characteristics. In particular, it is argued thatthe sustained self-sputtering phase is associated with thegeneration ofmultiply charged ions because only they can cause potential emission ofsecondary electrons whereas the yield caused by singly charged metal ionsis negligibly small.

  13. On the evolution of film roughness during magnetron sputtering deposition

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; De Hosson, J. Th. M.

    2010-11-15

    The effect of long-range screening on the surface morphology of thin films grown with pulsed-dc (p-dc) magnetron sputtering is studied. The surface evolution is described by a stochastic diffusion equation that includes the nonlocal shadowing effects in three spatial dimensions. The diffusional relaxation and the angular distribution of the incident particle flux strongly influence the transition to the shadowing growth regime. In the magnetron sputtering deposition the shadowing effect is essential because of the configuration of the magnetron system (finite size of sputtered targets, rotating sample holder, etc.). A realistic angular distribution of depositing particles is constructed by taking into account the cylindrical magnetron geometry. Simulation results are compared with the experimental data of surface roughness evolution during 100 and 350 kHz p-dc deposition, respectively.

  14. Alloying of metal nanoparticles by ion-beam induced sputtering

    NASA Astrophysics Data System (ADS)

    Magudapathy, P.; Srivastava, S. K.; Gangopadhyay, P.; Amirthapandian, S.; Saravanan, K.; Das, A.; Panigrahi, B. K.

    2017-01-01

    Ion-beam sputtering technique has been utilized for controlled synthesis of metal alloy nanoparticles of compositions that can be tuned. Analysis of various experimental results reveals the formation of Ag-Cu alloy nanoparticles on a silica substrate. Surface-plasmon optical resonance positions and observed shifts of Ag Bragg angles in X-ray diffraction pattern particularly confirm formation of alloy nanoparticles on glass samples. Sputtering induced nano-alloying mechanism has been discussed and compared with thermal mixing of Ag and Cu thin films on glass substrates. Compositions and sizes of alloy nanoparticles formed during ion-beam induced sputtering are found to exceed far from the values of thermal mixing.

  15. Anion formation in sputter ion sources by neutral resonant ionization

    SciTech Connect

    Vogel, J. S.

    2016-02-15

    Focused Cs{sup +} beams in sputter ion sources create mm-diameter pits supporting small plasmas that control anionization efficiencies. Sputtering produces overwhelmingly neutral products that the plasma can ionize as in a charge-change vapor. Electron capture between neutral atoms rises as the inverse square of the difference between the ionization potential of the Cs state and the electron affinity of the sputtered atom, allowing resonant ionization at very low energies. A plasma collision-radiation model followed electronic excitation up to Cs(7d). High modeled Cs(7d) in a 0.5 mm recess explains the 80 μA/mm{sup 2} C{sup −} current density compared to the 20 μA/mm{sup 2} from a 1 mm recess.

  16. Interpretation of sputter depth profiles by mixing simulations.

    PubMed

    Kupris, G; Rössler, H; Ecke, G; Hofmann, S

    1995-10-01

    The interpretation of sputter depth profiles can be simplified by use of computer simulations. Distortions caused by mixing effects and distortions caused by the information depth of the analytical method have to be distinguished. Atomic mixing and the information depth distort the depth profile simultaneously. Therefore, it is necessary to take into consideration a superposition of both distortion effects. The sputtering of a GaAs/A1As multilayer has been calculated on a personal computer with the binary collision approximation code T-DYN by Biersack and with an own layer model. A new computer code LAMBDA has been used for the investigation of the influence of the AES information depth in addition to atomic mixing and preferential sputtering. A comparison of the calculated and the measured depth profile explains the observed effects. Therefore conclusions can be drawn about the original elemental distribution in the sample from the measured depth profile.

  17. Physics of arcing, and implications to sputter deposition

    SciTech Connect

    Anders, Andre

    2005-03-15

    Arc and glow discharges are defined based on their cathode processes. Arcs are characterized by collective electron emission, which can be stationary with hot cathodes (thermionic arcs), or non-stationary with cold cathodes (cathodic arcs). A brief review on cathodic arc properties serves as the starting point to better understand arcing phenomena in sputtering. Although arcing occurs in both metal and reactive sputtering, it is more of an issue in the reactive case. Arcing occurs if sufficiently high field strength leads to thermal runaway of an electron emission site. The role of insulating layers and surface potential adjustment through current leakage is highlighted. In the situation of magnetron sputtering with ''racetrack'', the need for a model with two spatial dimensions is shown. In many cases, arcing is initiated by breakdown of dielectric layers and inclusions. It is most efficiently prevented if formation and excessive charge-up of dielectric layers and inclusions can be avoided.

  18. Carbon Back Sputter Modeling for Hall Thruster Testing

    NASA Technical Reports Server (NTRS)

    Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John T.

    2016-01-01

    In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) program, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Centers Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 3 4 mkhour in a fully carbon-lined chamber. A more detailed numerical monte carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values, on the order of 1.5- 2 microns/khour.

  19. Technology Trend of Sputtering System for Magnetoresistive Devices

    NASA Astrophysics Data System (ADS)

    Tsunekawa, Koji

    Magnetoresistive films used for read-heads of hard disc drives, magnetic random access memory devices, and magnetic sensors are fabricated by magnetron sputtering method. Since giant magnetoresistive and tunnel magnetoresistive films are composed of multilayered films, in which the thickness of each layer is in the nanometer range, high accuracy in thickness control and thickness uniformity is required for the sputtering systems. Film properties are also influenced by the quality of the vacuum during the fabrication process. This article addresses such issues on the deposition of magnetoresistive films, and introduces mass-production sputtering technologies capable of fabricating high quality multilayers. Furthermore, fabrication methods of the tunnel barrier in tunnel magnetoresistive devices are also described.

  20. Sputtering - Its relationship to isotopic fractionation on the lunar surface

    NASA Technical Reports Server (NTRS)

    Kerridge, J. F.; Kaplan, I. R.

    1978-01-01

    Silicon, oxygen, sulfur and, possibly, potassium show systematic enrichment of heavier isotopes with increasing soil maturity, probably as a result of solar-wind sputtering, but such a pattern is not exhibited by solar wind-implanted species. Apparently sputter-erosion is not penetrating to their implantation depth, about 200 A. This suggests that sputtering on the moon is being impeded by deposition of vapor condensate following meteoritic impact. Although neither secular variation in the isotopic composition at the source of regolith carbon, probably the solar wind, nor isotopic fractionation of carbon after implantation in the regolith can be ruled out, carbon isotope systematics currently yield no evidence in support of either process.

  1. Ion beam sputter target and method of manufacture

    DOEpatents

    Higdon, Clifton; Elmoursi, Alaa A.; Goldsmith, Jason; Cook, Bruce; Blau, Peter; Jun, Qu; Milner, Robert

    2014-09-02

    A target for use in an ion beam sputtering apparatus made of at least two target tiles where at least two of the target tiles are made of different chemical compositions and are mounted on a main tile and geometrically arranged on the main tile to yield a desired chemical composition on a sputtered substrate. In an alternate embodiment, the tiles are of varied thickness according to the desired chemical properties of the sputtered film. In yet another alternate embodiment, the target is comprised of plugs pressed in a green state which are disposed in cavities formed in a main tile also formed in a green state and the assembly can then be compacted and then sintered.

  2. Effect of Cross-Field Drifts and Core Rotation on Flows in the Main Scrape-Off Layer of DIII-D L-mode Plasmas

    SciTech Connect

    Groth, M; Boedo, J A; Brooks, N H; Isler, R C; Leonard, A W; Porter, G D; Watkins, J G; West, W P; Bray, B D; Fenstermacher, M E; Groebner, R J; Moyer, R A; Rudakov, D L; Yu, J H; Zeng, L

    2008-10-13

    The flow velocities of deuterons and low charge-state carbon ions have been measured simultaneously for the first time at the crown of the main SOL for low-density plasmas in DIII-D. The dependences of the flow fields on the direction of the cross-field drifts (E x B and B x {del}B) and core plasma rotation were investigated. The measurements indicate that the carbon ion flow direction and magnitude along the magnetic field lines are not necessarily determined by the deuteron flow field, but other physics must also play a role. The deuteron velocities at the plasma crown are high (20-30 km/s) in configurations with the ion B x {del}B drift toward the divertor X-point, while nearly zero in configurations with the opposite B x {del}B drift direction. The flow velocities of doubly charged carbon ions are independent of the ion B x {del}B drift direction, and the measurements suggest a stagnation point in the flow field at the crown of the plasma. Both deuteron and carbon ion flow velocities in the SOL were found to be independent of the direction of core plasma rotation. Simulations with the UEDGE code have been carried out to better understand the underlying physics processes. Including the cross-field drifts in the simulations produced divertor solutions that are in significantly closer agreement with the measurements. They do not, however, reproduce the measured flow fields at the crown for the configuration with the ion B x {del}B drift toward the divertor X-point.

  3. The contribution of collision cascades to sputtering and radiation damage.

    PubMed

    Thompson, M W

    2004-01-15

    Measurement of the velocity distribution of sputtered atoms has tested theories of sputtering and radiation damage. Experiments measuring the time of flight of sputtered atoms in precisely defined directions from the emitting surface, from which the related velocity and energy distributions may be deduced, are described. The energy distribution from polycrystalline targets often fits the form E/(E + Eb)3 derived from a theoretical model in which the bombarding ions initiate collision cascades that eject atoms through the surface. It is assumed that atoms are bound to the surface by a binding force normal to the surface, represented as a binding energy, in the formula. It is shown how this theory relates to that of radiation damage. Departures from the formula seem to correlate with high-energy density in cascades and/or low values of Eb/kT0, with T0 the target temperature. A second component then appears in the energy spectrum approximated by [formula: see text], where deltaT is an effective local temperature rise induced by cascades. The velocity distributions from single crystals are strongly affected by both the direction of ion incidence, indicative of ion channelling, and by emission in directions close to simple crystal axes, indicative of momentum focusing within cascades. Models of the cascade region, and the local heating it causes, have been deduced from sputtering experiments and have advanced our understanding of defect structures caused by radiation damage. Momentum focusing processes are active in creating interstitial-vacancy pairs in both radiation damage and sputtering and their properties have been deduced from these experiments. It is shown how the study of sputtering has enhanced the understanding of radiation damage.

  4. Research on the electrical characteristics of the Pt/CdS Schottky diode

    NASA Astrophysics Data System (ADS)

    Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

    2013-08-01

    With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

  5. Raman imaging of biofilms using gold sputtered fiber optic probes

    NASA Astrophysics Data System (ADS)

    Christopher, Christina Grace Charlet; Manoharan, Hariharan; Subrahmanyam, Aryasomayajula; Sai, V. V. Raghavendra

    2016-12-01

    In this work we report characterization of bacterial biofilm using gold sputtered optical fiber probe as substrates for confocal Raman spectroscopy measurements. The chemical composition and the heterogeneity of biofilms in the extracellular polymeric substances (EPS) was evaluated. The spatial distribution of bacterial biofilm on the substrates during their growth phase was studied using Raman imaging. Further, the influence of substrate's surface on bacterial adhesion was investigated by studying growth of biofilms on surfaces with hydrophilic and hydrophobic coatings. This study validates the use of gold sputtered optical fiber probes as SERS substrates in confocal microscopic configuration to identify and characterize clinically relevant biofilms.

  6. Discharge current modes of high power impulse magnetron sputtering

    SciTech Connect

    Wu, Zhongzhen Xiao, Shu; Ma, Zhengyong; Cui, Suihan; Ji, Shunping; Pan, Feng; Tian, Xiubo; Fu, Ricky K. Y.; Chu, Paul K.

    2015-09-15

    Based on the production and disappearance of ions and electrons in the high power impulse magnetron sputtering plasma near the target, the expression of the discharge current is derived. Depending on the slope, six possible modes are deduced for the discharge current and the feasibility of each mode is discussed. The discharge parameters and target properties are simplified into the discharge voltage, sputtering yield, and ionization energy which mainly affect the discharge plasma. The relationship between these factors and the discharge current modes is also investigated.

  7. Direct current sputtering of boron from boron/coron mixtures

    DOEpatents

    Timberlake, John R.; Manos, Dennis; Nartowitz, Ed

    1994-01-01

    A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod.

  8. Direct current sputtering of boron from boron/boron mixtures

    DOEpatents

    Timberlake, J.R.; Manos, D.; Nartowitz, E.

    1994-12-13

    A method for coating a substrate with boron by sputtering includes lowering the electrical resistance of a boron-containing rod to allow electrical conduction in the rod; placing the boron-containing rod inside a vacuum chamber containing substrate material to be coated; applying an electrical potential between the boron target material and the vacuum chamber; countering a current avalanche that commences when the conduction heating rate exceeds the cooling rate, and until a steady equilibrium heating current is reached; and, coating the substrate material with boron by sputtering from the boron-containing rod. 2 figures.

  9. Crystallinity of RF-Sputtered MoS2 Films.

    DTIC Science & Technology

    1988-04-15

    RF-Sputtered c MoS2 Films fl 0) J. R. LINCE and PAUL D. FLEISCHAUER Chemistry and Physics Laboratory ’ Laboratory Operations The Aerospace Corporation...block number) The crystallinity and morphology of thin, radio-frequency (rf)-sputtered MoS2 films deposited on 440C stainless steel substrates at both...and 8-20 scans). Under SEM, the films exhibited 4, "ridgelike" (or platelike) formation region for thicknesses between 0.18 and 1.0 m MoS2 . X-ray

  10. Observation of Dust Grain Sputtering in a Shock

    NASA Astrophysics Data System (ADS)

    Raymond, John C.; Ghavamian, P.; Williams, B. J.; Blair, W. P.; Borkowski, K. J.; Gaetz, T. J.; Sankrit, R.

    2014-01-01

    We have detected emission in C IV λλ1548,1551 from C atoms sputtered from dust in the gas behind a shock wave in the Cygnus Loop using COS on HST. The intensity agrees approximately with predictions from model calculations that match the Spitzer 24 μm and the X-ray intensity profiles. Thus these observations confirm the overall picture of dust destruction in SNR shocks and the sputtering rates assumed. However, the CIV intensity 10" behind the shock is too high compared to the intensities at the shock and 25" behind it. Projection effects and a complex geometry are probably responsible for the discrepancy.

  11. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  12. Advances in sputtered and ion plated solid film lubrication

    NASA Technical Reports Server (NTRS)

    Spalvins, T.

    1985-01-01

    The glow discharge or ion assisted vacuum deposition techniques, primarily sputtering and ion plating, have rapidly emerged and offer great potential to deposit solid lubricants. The increased energizing of these deposition processes lead to improved adherence and coherence, favorable morphological growth, higher density, and reduced residual stresses in the film. These techniques are of invaluable importance where high precision machines tribo-components require very thin, uniform lubricating films (0.2 m), which do not interface with component tolerances. The performance of sputtered MoS2 films and ion plated Au and Pb films are described in terms of film thickness, coefficient of friction, and wear lives.

  13. Coating of nanoporous membranes: atomic layer deposition versus sputtering.

    PubMed

    Grigoras, K; Airaksinen, V M; Franssila, S

    2009-06-01

    Nanoporous anodic alumina membranes and silicon samples with plasma etched nanopores have been coated with zinc oxide or gold layer using atomic layer deposition (ALD) or sputtering, respectively. In the case of ALD process, the precursor pulses were extended, compared with planar substrate coating. Thick (60 microm) anodic alumina membranes have been conformally coated with zinc oxide ALD layer. Metal sputtering technique was used just for opposite purpose--to minimize the penetration of gold into the pores during gold-coating of the top and bottom surfaces of the membrane. Scanning electron microscopy (SEM) has been used to investigate the layer thickness, uniformity and conformality inside the nanopores.

  14. Growth of RuO2 nanorods in reactive sputtering

    NASA Astrophysics Data System (ADS)

    Lin, Yu-Tsun; Chen, Chun-Yu; Hsiung, Chang-Po; Cheng, Kai-Wen; Gan, Jon-Yiew

    2006-08-01

    The synthesis of RuO2 nanorods with reactive sputtering was demonstrated in this work. The synthesis process is very much like the metal organic chemical vapor deposition, except that RuO3 generated with reactive sputtering under high oxygen-to-argon flow ratio (>5SCCM /15SCCM) (SCCM denotes cubic centimeter per minute at STP) and high substrate temperature (>300°C) is used in place of the metal organic precursor. RuO2 nanorods tend to grow steadily with constant aspect ratio (˜27) and the field-emission characteristics appear very sensitive to their spatial distribution.

  15. Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information

    SciTech Connect

    Wang, Zhaoying; Liu, Bingwen; Zhao, Evan; Jin, Ke; Du, Yingge; Neeway, James J.; Ryan, Joseph V.; Hu, Dehong; Zhang, Hongliang; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampillai; Wang, Fuyi; Zhu, Zihua

    2015-08-01

    For the first time, the use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass, SON68, and layered hole-perovskite oxide thin films were selected as model systems due to their fundamental and practical significance. Our study shows that if the size of analysis areas is same, the highest sputter rate of argon cluster sputtering can be 2-3 times faster than the highest sputter rates of oxygen or cesium sputtering. More importantly, high quality data and high sputter rates can be achieved simultaneously for argon cluster sputtering while this is not the case for cesium and oxygen sputtering. Therefore, for deep depth profiling of insulating samples, the measurement efficiency of argon cluster sputtering can be about 6-15 times better than traditional cesium and oxygen sputtering. Moreover, for a SrTiO3/SrCrO3 bi-layer thin film on a SrTiO3 substrate, the true 18O/16O isotopic distribution at the interface is better revealed when using the argon cluster sputtering source. Therefore, the implementation of an argon cluster sputtering source can significantly improve the measurement efficiency of insulating materials, and thus can expand the application of ToF-SIMS to the study of glass corrosion, perovskite oxide thin films, and many other potential systems.

  16. A single-molecule diode

    NASA Astrophysics Data System (ADS)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-06-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).

  17. Diode lasers: From laboratory to industry

    NASA Astrophysics Data System (ADS)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  18. A compact high brilliance diode laser

    NASA Astrophysics Data System (ADS)

    Bammer, F.; Holzinger, B.

    2006-02-01

    We explain some technical details regarding time-multiplexing of laser diodes, a method to improve the beam quality of diode lasers, which is still insufficient for many applications. Several pulsed laser diode beams are guided onto a common optical path to superpose the power of the laser diodes while maintaining the beam parameter product of a single laser diode. Pulsed operation of continuous wave laser diodes with average power equal to the specified cw-power of 4 W was tested for 150 hours without failure. We use a fast digital optical multiplexer built up by a cascade of binary optical switches. For the latter we use a Pockel's cell followed by a polarization filter, which allows addressing of two optical paths. Instead of direct on/off-switching we drive the crystals with a harmonic voltage course to avoid ringing caused by piezo-electricity. Up to now an optical power of 10.5 W was generated, 13 W are expected with some improvements. Furthermore we discuss the use of new 8 W laser diodes and the involved implications on driver technology.

  19. Checker Takes the Guesswork out of Diode Identification

    ERIC Educational Resources Information Center

    Harman, Charles

    2011-01-01

    At technical colleges and secondary-level tech schools, students enrolled in basic electronics labs who have learned about diodes that do rectification are used to seeing power diodes like the 1N4001. When the students are introduced to low-power zener diodes and signal diodes, component identification gets more complex. If the small zeners are…

  20. Optical and structural properties of sputter-deposited nanocrystalline Cu2O films: effect of sputtering gas.

    PubMed

    Chandra, R; Chawla, A K; Ayyub, P

    2006-04-01

    We report the effect of the atomic mass of the sputtering gas (He, Ne, Ar, Kr, and Xe) on the structure and optical properties of nanocrystalline cuprous oxide (Cu2O) thin films deposited by dc magnetron sputtering. The crystal structure and surface morphology were studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. We find that the atomic mass of the sputtering gas significantly affects the primary crystallite size as well as the surface morphology and texture. Optical reflectance and transmission measurements show that the nanocrystalline thin films are transparent over most of the visible region. The HOMO-LUMO gap obtained from optical absorption spectra show a size-dependent quantum shift with respect to the bulk band gap reported for Cu2O (2.1 eV).

  1. Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

    NASA Technical Reports Server (NTRS)

    Przybyszewski, J. S.; Shaltens, R. K. (Inventor)

    1973-01-01

    The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

  2. Dependence of Characteristic Diode Parameters in Ni/n-GaAs Contacts on Thermal Annealing and Sample Temperature

    NASA Astrophysics Data System (ADS)

    Yildirim, N.; Dogan, H.; Korkut, H.; Turut, A.

    We have prepared the sputtered Ni/n-GaAs Schottky diodes which consist of as-deposited, and diodes annealed at 200 and 400°C for 2 min. The effect of thermal annealing on the temperature-dependent current-voltage (I-V) characteristics of the diodes has been experimentally investigated. Their I-V characteristics have been measured in the temperature range of 60-320 K with steps of 20 K. It has been seen that the barrier height (BH) slightly increased from 0.84 (as-deposited sample) to 0.88 eV at 300 K when the contact has been annealed at 400°C. The SBH increased whereas the ideality factor decreased with increasing annealing temperature for each sample temperature. The I-V measurements showed a dependence of ideality factor n and BH on the measuring temperature that cannot be explained by the classical thermionic emission theory. The experimental data are consistent with the presence of an inhomogeneity of the SBHs. Therefore, the temperature dependent I-V characteristics of the diodes have been discussed in terms of the multi-Gaussian distribution model. The experimental data good have agree with the fitting curves over whole measurement temperature range indicating that the SBH inhomogeneity of our as-deposited and annealed Ni/n-GaAs SBDs can be well-described by a double-Gaussian distribution. The slope of the nT versus T plot for the samples has approached to unity with increasing annealing temperature and becomes parallel to that of the ideal Schottky contact behavior for the 400°C annealed diode. Thus, it has been concluded that the thermal annealing process translates the metal-semiconductor contacts into thermally stable Schottky contacts.

  3. Versatile subnanosecond laser diode driver

    NASA Astrophysics Data System (ADS)

    Żbik, Mateusz; Wieczorek, Piotr Z.

    2016-09-01

    This article presents a laser diode driver that provides a fast modulation of a laser beam. A pulsed current source was designed and built to test Infra-Red (I-R) receivers in the Time Domain (TD). The proposed solution allows to estimate pulse responses of various photodetectors, whereas the testing was performed with a PiN photodetector. The pulse response brings the information on the behavior of the device under test in a wide frequency range. In addition, an experimental application of the proposed method is presented too. System discussed in this paper has been fully designed and manufactured in Warsaw University of Technology (WUT) in Institute of Electronic Systems (ISE).

  4. Diode pumped tunable dye laser

    NASA Astrophysics Data System (ADS)

    Burdukova, O.; Gorbunkov, M.; Petukhov, V.; Semenov, M.

    2017-03-01

    A wavelength-tunable dye laser pumped by blue laser diodes (λ =445 nm) in a 200 ns pulsed mode has been developed. We used a 3-mirror cavity with transverse excitation and total internal reflection of laser beam in the active element. Tuning curves for 8 dyes in benzyl alcohol were measured in the range of 506-700 nm. Four dyes have their tuning range more than 60 nm, which is comparable to the tuning ranges of other dye lasers pumped by more expensive sources. The output energy obtained at the generation maximum of both DCM and coumarin 540A dyes was approximately 130 nJ while the pump energy was 2400 nJ.

  5. Bright diode laser light source.

    PubMed

    Lassila, Erkki; Hernberg, Rolf

    2006-05-20

    A simplified multiwavelength prototype of an axially symmetric diode laser device based on stacks made of single emitters has been made, and the performance of the device has been demonstrated experimentally. The results verify that kilowatt-level light power can be focused into a circular spot with a 1/e2 diameter of 360 microm, a focal length of 100 mm, and a numerical aperture of 0.24, thus producing an average power density in excess of 10 kW/mm2 and a brightness of 6x10(10) W m-2 sr-1. The experiments also predict that it will be possible to increase these values to more than 60 kW/mm2 and 3x10(11) W m-2 sr-1.

  6. A Portable Diode Array Spectrophotometer.

    PubMed

    Stephenson, David

    2016-05-01

    A cheap portable visible light spectrometer is presented. The spectrometer uses readily sourced items and could be constructed by anyone with a knowledge of electronics. The spectrometer covers the wavelength range 450-725 nm with a resolution better than 5 nm. The spectrometer uses a diffraction grating to separate wavelengths, which are detected using a 128-element diode array, the output of which is analyzed using a microprocessor. The spectrum is displayed on a small liquid crystal display screen and can be saved to a micro SD card for later analysis. Battery life (2 × AAA) is estimated to be 200 hours. The overall dimensions of the unit are 120 × 65 × 60 mm, and it weighs about 200 g.

  7. High power diode lasers reliability experiment

    NASA Astrophysics Data System (ADS)

    Lu, Guoguang; Xie, Shaofeng; Hao, Mingming; Huang, Yun; En, Yunfei

    2013-12-01

    In order to evaluate and obtain the actual lifetime data of high power laser diodes, an automated high power laser diodes reliability experiment was developed and reported in this paper. This computer controlled setup operates the laser diodes 24 hours a day, the parameters such as output power, wavelength were test once in one hour. The experiment has 60 work stations, the temperature control range is from 25°C to 70°C, and the output power of the aging device is beyond 20W.

  8. Corrosion of SA1388-1 diodes

    SciTech Connect

    Krska, C.; Stimetz, C.; Braithwaite, J.; Sorensen, R.; Hlava, P.

    1996-06-01

    After 5 y storage at Allied Signal, a subassembly with SA1388-1 diodes failed testing and the cause was an unacceptable current leak rate in one of the diodes. This was traced to a CuS deposit in a single production lot of diodes; however only about 0.3% failed the specification. A study was performed to determine the cause and potential long-term significance of this problem. Probable cause was determined to be the P-bearing braze material not being compatible with the Ag immersion plating solution (cyanide-based) and to the storage environment containing sulfur.

  9. Bilayer avalanche spin-diode logic

    SciTech Connect

    Friedman, Joseph S. Querlioz, Damien; Fadel, Eric R.; Wessels, Bruce W.; Sahakian, Alan V.

    2015-11-15

    A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

  10. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    NASA Technical Reports Server (NTRS)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  11. Arbitrary waveform generator to improve laser diode driver performance

    SciTech Connect

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  12. Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information.

    PubMed

    Wang, Zhaoying; Liu, Bingwen; Zhao, Evan W; Jin, Ke; Du, Yingge; Neeway, James J; Ryan, Joseph V; Hu, Dehong; Zhang, Kelvin H L; Hong, Mina; Le Guernic, Solenne; Thevuthasan, Suntharampilai; Wang, Fuyi; Zhu, Zihua

    2015-08-01

    The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest.

  13. Kr bubble formation and growth in sputtered Au

    SciTech Connect

    Patten, J.W.; Bayne, M.A.; Hays, D.D.; Moss, R.W.

    1980-01-01

    Sputtering parameters were adjusted to produce Kr content up to several atomic percent in sputtered Au. As-sputtered density was approximately 17.5 g/cm/sup 3/ or 91% of theoretical density for a Kr content of approximately 5 at.%. Kr bubble formation and growth behavior was characterized as a function of heat treatment time and temperature (below the melting point) by transmission electron microscopy, optical metallography, and density measurement. Kr bubbles as small as 50 A diameter and densities down to 72% of theoretical (14.0 g/cm/sup 3/) were observed. Larger bubbles in excess of 1 ..mu..m diameter were observed in the lowest density samples. Surface finishes better than 20 ..mu..m were produced on the substrate sides of these sputtered deposits by replication of machined substrate surfaces. However, surface finish was degraded with increasing deposit thickness for deposits containing up to 5 at.% Kr. Surfaces were also degraded by heat treatments sufficiently severe to produce large (1 ..mu..m diameter) Kr bubbles intersecting the deposit surfaces.

  14. Preparation and characterization of RF magnetron sputtered calcium pyrophosphate coatings.

    PubMed

    Yonggang, Yan; Wolke, J G C; Yubao, Li; Jansen, J A

    2006-03-15

    CaP ceramic has been widely used as coating on metals in orthopedics and oral dentistry. Variations in CaP composition can lead to different dissolution/precipitation behavior and may also affect the bone response. In the present study calcium pyrophosphate and hydroxylapatite coatings were successfully prepared by RF magnetron sputtering deposition. The phase composition, morphological properties, and the dissolution in SBF were characterized by using XRD, FTIR, EDS, SEM, and spectrophotometry. The results showed that all the sputtered coatings were amorphous and changed into a crystal structure after IR-radiation. The temperature for the crystallization of the amorphous coatings is lower for the hydroxylapatite coating (550 degrees C), compared to the calcium pyrophosphate coating (650 degrees C). All sputtered amorphous coatings were instable in SBF and dissolved partially within 4 wks of incubation. The heat-treated coatings appeared to be stable after incubation. These results showed that magnetron sputtering of calcium pyrophosphate coating is a promising method for forming a biocompatible ceramic coating.

  15. Pretreatment of lubricated surfaces with sputtered cadmium oxide

    NASA Technical Reports Server (NTRS)

    Fusaro, Robert L. (Inventor)

    1991-01-01

    Cadmium oxide is used with a dry solid lubricant on a surface to improve wear resistance. The surface topography is first altered by photochemical etching to a predetermined pattern. The cadmium oxide is then sputtered onto the altered surface to form an intermediate layer to more tightly hold the dry lubricant, such as graphite.

  16. Elementary surface processes during reactive magnetron sputtering of chromium

    SciTech Connect

    Monje, Sascha; Corbella, Carles Keudell, Achim von

    2015-10-07

    The elementary surface processes occurring on chromium targets exposed to reactive plasmas have been mimicked in beam experiments by using quantified fluxes of Ar ions (400–800 eV) and oxygen atoms and molecules. For this, quartz crystal microbalances were previously coated with Cr thin films by means of high-power pulsed magnetron sputtering. The measured growth and etching rates were fitted by flux balance equations, which provided sputter yields of around 0.05 for the compound phase and a sticking coefficient of O{sub 2} of 0.38 on the bare Cr surface. Further fitted parameters were the oxygen implantation efficiency and the density of oxidation sites at the surface. The increase in site density with a factor 4 at early phases of reactive sputtering is identified as a relevant mechanism of Cr oxidation. This ion-enhanced oxygen uptake can be attributed to Cr surface roughening and knock-on implantation of oxygen atoms deeper into the target. This work, besides providing fundamental data to control oxidation state of Cr targets, shows that the extended Berg's model constitutes a robust set of rate equations suitable to describe reactive magnetron sputtering of metals.

  17. Sputtering of metals at ion-electron irradiation

    NASA Astrophysics Data System (ADS)

    Martynenko, Yu. V.; Korshunov, S. N.; Skorlupkin, I. D.

    2014-02-01

    It has been found that, in contrast to the commonly accepted opinion, simultaneous irradiation by 15-keV Ar+ ions and 2.5-keV electrons at temperatures above 0.5 T m ( T m is the melting temperature) induces much larger sputtering of metallic copper, nickel, and steel than irradiation only by Ar+ ions. The effect increases with the temperature. At T = 0.7 T m, the sputtering coefficients in the case of ion-electron irradiation are more than twice as large as the sputtering coefficients in the case of irradiation by Ar+ ions. The experiments on the sublimation of copper show that the sublimation rate in the case of the heating of a sample by an electron beam is higher than that in the case of heating in an electric vacuum oven. The revealed effects are explained by the electron-induced excitation of adatoms (atoms stuck over the surface, which appear owing to ion bombardment). Excited adatoms have a smaller binding energy with the surface and are sputtered more easily.

  18. Formation of metastable excited states during sputtering of transition metals

    SciTech Connect

    Wucher, A.; Sroubek, Z.

    1997-01-01

    We propose a simple model which treats the formation of metastable excited neutral atoms during sputtering of a transition metal as a two step process. First, the energy deposited into the electronic system of the solid by electronic energy losses of all moving particles in the collision cascade is considered to lead to a locally altered equilibrium electronic state of the solid. It is found that this step is dominated by collective interaction with the conduction band electrons rather than by electron promotion in binary atom-atom collisions. Second, sputtered excited atoms are assumed to be formed by resonant neutralization of excited ions (reflecting the altered equilibrium state) while crossing the surface. It is shown that this model explains the total as well as the velocity dependent excitation probability observed in recent experiments on sputtered neutral silver atoms, which cannot be understood in terms of existing theories describing the formation of excited states in sputtering. {copyright} {ital 1996} {ital The American Physical Society}

  19. Sputtered gold mask for deep chemical etching of silicon

    NASA Technical Reports Server (NTRS)

    Pisciotta, B. P.; Gross, C.; Olive, R. S.

    1975-01-01

    Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

  20. Angular distributions of sputtered atoms for low-energy heavy ions, medium ions and light ions

    NASA Astrophysics Data System (ADS)

    Yamamura, Yasunori; Mizuno, Yoshiyuki; Kimura, Hidetoshi

    1986-03-01

    The angular distributions of sputtered atoms for the near-threshold sputtering of heavy ions, medium ions, and light ions have been investigated by a few-collision model and the ACAT computer simulation code. For heavy-ion sputtering the preferential angle of sputtered atoms is about 50° which is measured from the surface normal, while in the case of the near-threshold light-ion sputtering the preferential angles are nearly equal to the surface normal and do not depend on angle of incidence. It is found that the agreement between the ACAT preferential angles and theoretical values due to a few-collision model is very good.

  1. Diffusion of co-sputtered metals as bonding materials for 3D interconnects during thermal treatments.

    PubMed

    Hsu, S Y; Chen, H Y; Chen, K N

    2012-03-01

    Diffusion behaviors of co-sputtered metals during thermal treatments were investigated, where these co-sputtered metals can be used as bonding materials for 3D Interconnects. In this paper, we report the diffusion behaviors and discuss the diffusion mechanisms of co-sputtered metals before and after annealing. Atom and vacancy volume, vacancy formation energy, and activation energy are proposed to explain the diffusion direction and diffusion rate among different co-sputtered metals. Based on the excellent bonding performance of this method, Cu/metal co-sputtering bonding is considered as a potential candidate for advanced bonding technology.

  2. Sputtering phenomena of discharge chamber components in a 30-cm diameter Hg ion thruster

    NASA Technical Reports Server (NTRS)

    Mantenieks, M. A.; Rawlin, V. K.

    1976-01-01

    Sputtering and deposition rates were measured for discharge chamber components of a 30-cm diameter mercury ion thruster. It was found that sputtering rates of the screen grid and cathode baffle were strongly affected by geometry of the baffle holder. Sputtering rates of the baffle and screen grid were reduced to 80 and 125 A/hr, respectively, by combination of appropriate geometry and materials selections. Sputtering rates such as these are commensurate with thruster lifetimes of 15,000 hours or more. A semiempirical sputtering model showed good agreement with the measured values.

  3. Molecular Dynamics simulations of platinum plasma sputtering. : A comparative case study.

    NASA Astrophysics Data System (ADS)

    Brault, Pascal; Chuon, Sotheara; Bauchire, Jean-Marc

    2016-05-01

    Molecular Dynamics simulations are carried out for investigating atomic processes of platinum sputtering. Sputtered Pt atom energy distribution functions are determined at different sputtering argon ionenergies: 100, 500 and 1000 eV. Calculated energy distribution functions show a cross-over from Thompson theory to binary collision model when increasing argon ion energy and Pt atom sputtered energy. Implanted argon ion number is depending on its kinetic energy, while it is not the case in binary collision approximation. Finally sputtering yields are greater for Thompson theory than for binary collision model at low energy, but converge to the close values at high energy.

  4. Pt/ZnO nanowire Schottky diodes

    SciTech Connect

    Heo, Y.W.; Tien, L.C.; Norton, D.P.; Pearton, S.J.; Kang, B.S.; Ren, F.; LaRoche, J.R.

    2004-10-11

    Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO{sub 2}-coated Si substrates. The diodes exhibit excellent ideality factors of 1.1 at 25 deg. C and very low (1.5x10{sup -10} A, equivalent to 2.35 A cm{sup -2}, at -10 V) reverse currents. The nanowire diodes show a strong photoresponse, with the current-voltage characteristics becoming ohmic under ultraviolet illumination (366 nm light). The on-off current ratio of the diodes at 0.15/-5 V was {approx}6. These results show the ability to manipulate the electron transport in nanoscale ZnO devices.

  5. Diode Laser Ear Piercing: A Novel Technique.

    PubMed

    Suseela, Bibilash Babu; Babu, Preethitha; Chittoria, Ravi Kumar; Mohapatra, Devi Prasad

    2016-01-01

    Earlobe piercing is a common office room procedure done by a plastic surgeon. Various methods of ear piercing have been described. In this article, we describe a novel method of laser ear piercing using the diode laser. An 18-year-old female patient underwent an ear piercing using a diode laser with a power of 2.0 W in continuous mode after topical local anaesthetic and pre-cooling. The diode laser was fast, safe, easy to use and highly effective way of ear piercing. The advantages we noticed while using the diode laser over conventional methods were more precision, minimal trauma with less chances of hypertrophy and keloids, no bleeding with coagulation effect of laser, less time taken compared to conventional method and less chance of infection due to thermal heat effect of laser.

  6. Diode Lasers and Practical Trace Analysis.

    ERIC Educational Resources Information Center

    Imasaka, Totaro; Nobuhiko, Ishibashi

    1990-01-01

    Applications of lasers to molecular absorption spectrometry, molecular fluorescence spectrometry, visible semiconductor fluorometry, atomic absorption spectrometry, and atomic fluorescence spectrometry are discussed. Details of the use of the frequency-doubled diode laser are provided. (CW)

  7. Schottky barrier diode and method thereof

    NASA Technical Reports Server (NTRS)

    Aslam, Shahid (Inventor); Franz, David (Inventor)

    2008-01-01

    Pt/n.sup.-GaN Schottky barrier diodes are disclosed that are particularly suited to serve as ultra-violet sensors operating at wavelengths below 200 nm. The Pt/n.sup.-GaN Schottky barrier diodes have very large active areas, up to 1 cm.sup.2, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n.sup.-GaN Schottky diodes of sizes 0.25 cm.sup.2 and 1 cm.sup.2 have been fabricated from n.sup.-/n.sup.+ GaN epitaxial layers grown by vapor phase epitaxy on single crystal c-plane sapphire, which showed leakage currents of 14 pA and 2.7 nA, respectively for the 0.25 cm.sup.2 and 1 cm.sup.2 diodes both configured at a 0.5V reverse bias.

  8. Diode laser (980nm) cartilage reshaping

    NASA Astrophysics Data System (ADS)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  9. JANTX/N98B Zener diode

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Tested diodes were manufactured aby Motorola and Siemens. Both sample lots performed well in groups 1 and 3 testing. Group 2 testing was most detrimental of three groups. Extreme heat was big factor in failure mode.

  10. JANTX/N937B Zener diode

    NASA Technical Reports Server (NTRS)

    1980-01-01

    Zener diodes manufactured by Motorola and Siemens were tested. Apparent failure mode in all three groups was B (sub) V (Zener-breakdown-voltage) minimum failure. Both manufacturers had apporximately same amount of failure in each testing.

  11. Diode Laser Ear Piercing: A Novel Technique

    PubMed Central

    Suseela, Bibilash Babu; Babu, Preethitha; Chittoria, Ravi Kumar; Mohapatra, Devi Prasad

    2016-01-01

    Earlobe piercing is a common office room procedure done by a plastic surgeon. Various methods of ear piercing have been described. In this article, we describe a novel method of laser ear piercing using the diode laser. An 18-year-old female patient underwent an ear piercing using a diode laser with a power of 2.0 W in continuous mode after topical local anaesthetic and pre-cooling. The diode laser was fast, safe, easy to use and highly effective way of ear piercing. The advantages we noticed while using the diode laser over conventional methods were more precision, minimal trauma with less chances of hypertrophy and keloids, no bleeding with coagulation effect of laser, less time taken compared to conventional method and less chance of infection due to thermal heat effect of laser. PMID:28163460

  12. Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode

    SciTech Connect

    Ejderha, K.; Duman, S. Urhan, F.; Nuhoglu, C.; Turut, A.

    2014-12-21

    In this study, Ti/n-GaAs Schottky barrier diode has been fabricated by DC magnetron sputtering. The current–voltage, capacitance–voltage, and conductance–voltage characteristics of Ti/n–GaAs diode have been investigated in the temperature range of 80–320 K. The ideality factor and barrier height values have been calculated from the forward current–voltage characteristics. The variation of the diode parameters with the sample temperature has been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependent capacitance–voltage characteristics have been measured to calculate the carrier concentration, diffusion potential, barrier height, and temperature coefficient of the barrier height (α = −0.65 meV K{sup −1}). The fact that the temperature coefficient of the barrier height changes from metal to metal has been ascribed to the chemical nature of the contact metal or metal electronegativity.

  13. Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes.

    PubMed

    Shi, Zhi-Feng; Zhang, Yuan-Tao; Cui, Xi-Jun; Zhuang, Shi-Wei; Wu, Bin; Chu, Xian-Wei; Dong, Xin; Zhang, Bao-Lin; Du, Guo-Tong

    2015-06-07

    Vertically aligned ZnO/MgO coaxial nanowire (NW) arrays were prepared on sapphire substrates by metal-organic chemical vapor deposition combined with a sputtering system. We present a comparative investigation of the morphological and optical properties of the produced heterostructures with different MgO layer thicknesses. Photoluminescence measurements showed that the optical performances of ZnO/MgO coaxial NWs were strongly dependent on the MgO layer thickness. The intensity of deep-level emission (DLE) decreased monotonously with the increase of MgO thickness, while the enhancement of ultraviolet (UV) emission showed a critical thickness of 15 nm, achieving a maximum intensity ratio (∼226) of IUV/IDLE at the same time. The significantly improved exciton emission efficiency of the coaxial NW structures allows us to study the surface passivation effect, photogenerated carrier confinement and transfer in terms of energy band theory. More importantly, we achieved an ultralow threshold (4.5 mA, 0.58 A cm(-2)) electrically driven UV lasing action based on the ZnO/MgO NW structures by constructing an Au/MgO/ZnO metal/insulator/semiconductor diode, and the continuous-current-driven diode shows a good temperature tolerance. The results obtained on the unique optical properties of ZnO/MgO coaxial NWs shed light on the design and development of ZnO-based UV laser diodes assembled with nanoscale building blocks.

  14. Channelized coplanar waveguide pin-diode switches

    NASA Technical Reports Server (NTRS)

    Ponchak, G. E.; Simons, R. N.

    1989-01-01

    Three different types of p-i-n diode, reflective CPW switches are presented. The first two switches are the series and the shunt mounted diode switches. Each has achieved greater than 15 dB of isolation over a broad bandwidth. The third switch is a narrow band, high isolation switched filter which has achieved 19 dB of isolation. Equivalent circuits and measured performance for each switch is presented.

  15. Frequency-narrowed diode array bar.

    PubMed

    Babcock, Earl; Chann, Bien; Nelson, Ian A; Walker, Thad G

    2005-05-20

    We describe a method to frequency narrow multielement high-power diode bars. Using a commercial 60-W, 49-element, 1-cm-long diode array bar at 795 nm running at 45 W, we narrow the linewidth from 1000 to 64 GHz with only a loss of 33% in output power. The resulting laser light is well suited for spin-exchange optical pumping of noble gas nuclei.

  16. Bypass diode for a solar cell

    DOEpatents

    Rim, Seung Bum [Palo Alto, CA; Kim, Taeseok [San Jose, CA; Smith, David D [Campbell, CA; Cousins, Peter J [Menlo Park, CA

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  17. Stacked switchable element and diode combination

    DOEpatents

    Branz, Howard M.; Wang, Qi

    2006-06-27

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  18. Phase Noise Reduction of Laser Diode

    NASA Technical Reports Server (NTRS)

    Zhang, T. C.; Poizat, J.-Ph.; Grelu, P.; Roch, J.-F.; Grangier, P.; Marin, F.; Bramati, A.; Jost, V.; Levenson, M. D.; Giacobino, E.

    1996-01-01

    Phase noise of single mode laser diodes, either free-running or using line narrowing technique at room temperature, namely injection-locking, has been investigated. It is shown that free-running diodes exhibit very large excess phase noise, typically more than 80 dB above shot-noise at 10 MHz, which can be significantly reduced by the above-mentioned technique.

  19. Stacked Switchable Element and Diode Combination

    DOEpatents

    Branz, H. M.; Wang, Q.

    2006-06-27

    A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship so that the semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a forming voltage to the switchable element (14).

  20. Varactor diodes for millimeter and submillimeter wavelengths

    NASA Technical Reports Server (NTRS)

    Rizzi, Brian J.; Hesler, Jeffrey L.; Dossal, Hasan; Crowe, Thomas W.

    1992-01-01

    Whisker-contacted GaAs Schottky barrier varactor diodes are the most common high-frequency multiplier element in use today. They are inherently simple devices that have very high frequency response and have been used to supply local oscillator power for Schottky heterodyne receivers to frequencies approaching 700 GHz. This paper discusses the development of improved varactor diode technology for space based applications at millimeter and submillimeter wavelengths.

  1. Particle contamination formation and detection in magnetron sputtering processes

    SciTech Connect

    Selwyn, G.S.; Weiss, C.A.; Sequeda, F.; Huang, C.

    1996-10-01

    Defects caused by particulate contamination are an important concern in the fabrication of thin film products. Often, magnetron sputtering processes are used for this purpose. Particle contamination can cause electrical shorting, pin holes, problems with photolithography, adhesion failure, as well as visual and cosmetic defects. Particle contamination generated during thin film processing can be detected using laser light scattering, a powerful diagnostic technique that provides real-time, {ital in-situ} imaging of particles > 0.3 {mu}m in diameter. Using this technique, the causes, sources and influences on particles in plasma and non-plasma and non-plasma processes may be independently evaluated and corrected. Several studies employing laser light scattering have demonstrated both homogeneous and heterogeneous causes of particle contamination. In this paper, we demonstrate that the mechanisms for particle generation, transport and trapping during magnetron sputter deposition are different from the mechanisms reported in previously studied plasma etch processes. During magnetron sputter deposition, one source of particle contamination is linked to portions of the sputtering target surface exposed to weaker plasma density. In this region, film redeposition is followed by filament or nodule growth and enhanced trapping which increases filament growth. Eventually the filaments effectively ``short circuit`` the sheath, causing high currents to flow through these features. This, in turn, causes heating failure of the filament fracturing and ejecting the filaments into the plasma and onto the substrate. Evidence of this effect has been observed in semiconductor (IC) fabrication and storage disk manufacturing. Discovery of this mechanism in both technologies suggests that this mechanism may be universal to many sputtering processes.

  2. Carbon Back Sputter Modeling for Hall Thruster Testing

    NASA Technical Reports Server (NTRS)

    Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John Tamin

    2016-01-01

    Lifetime requirements for electric propulsion devices, including Hall Effect thrusters, are continually increasing, driven in part by NASA's inclusion of this technology in it's exploration architecture. NASA will demonstrate high-power electric propulsion system on the Solar Electric Propulsion Technology Demonstration Mission (SEP TDM). The Asteroid Redirect Robotic mission is one candidate SEP TDM, which is projected to require tens of thousands of thruster life. As thruster life is increased, for example through the use of improved magnetic field designs, the relative influence of facility effects increases. One such effect is the sputtering and redeposition, or back sputter, of facility materials by the high energy thruster plumes. In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) project, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Center's Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 1 micron/kh in a fully carbon-lined chamber. A more detailed numerical Monte Carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values on the order of 1.5 - 2 micron/kh at 600 V and 12.5 kW.

  3. Three-dimensional particle simulation of back-sputtered carbon in electric propulsion test facility

    NASA Astrophysics Data System (ADS)

    Zheng, Hongru; Cai, Guobiao; Liu, Lihui; Shang, Shengfei; He, Bijiao

    2017-03-01

    The back-sputtering deposition on thruster surface caused by ion bombardment on chamber wall material affects the performance of thrusters during the ground based electric propulsion endurance tests. In order to decrease the back-sputtering deposition, most of vacuum chambers applied in electric propulsion experiments are equipped with anti-sputtering targets. In this paper, a three-dimensional model of plume experimental system (PES) including double layer anti-sputtering target is established. Simulation cases are made to simulate the plasma environment and sputtering effects when an ion thruster is working. The particle in cell (PIC) method and direct simulation Monte Carlo (DSMC) method is used to calculate the velocity and position of particles. Yamamura's model is used to simulate the sputtering process. The distribution of sputtered anti-sputtering target material is presented. The results show that the double layer anti-sputtering target can significantly reduce the deposition on thruster surface. The back-sputtering deposition rates on thruster exit surface for different cases are compared. The chevrons on the secondary target are rearranged to improve its performance. The position of secondary target has relation with the ion beam divergence angle, and the radius of the vacuum chamber. The back-sputtering deposition rate is lower when the secondary target covers the entire ion beam.

  4. Solar-Wind Protons and Heavy Ions Sputtering of Lunar Surface Materials

    SciTech Connect

    Barghouty, N.; Meyer, Fred W; Harris, Peter R

    2011-01-01

    Lunar surface materials are exposed to {approx}1 keV/amu solar-wind protons and heavy ions on almost continuous basis. As the lunar surface consists of mostly oxides, these materials suffer, in principle, both kinetic and potential sputtering due to the actions of the solar-wind ions. Sputtering is an important mechanism affecting the composition of both the lunar surface and its tenuous exosphere. While the contribution of kinetic sputtering to the changes in the composition of the surface layer of these oxides is well understood and modeled, the role and implications of potential sputtering remain unclear. As new potential-sputtering data from multi-charged ions impacting lunar regolith simulants are becoming available from Oak Ridge National Laboratory's MIRF, we examine the role and possible implications of potential sputtering of Lunar KREEP soil. Using a non-equilibrium model we demonstrate that solar-wind heavy ions induced sputtering is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

  5. The effect of plasma impurities on the sputtering of tungsten carbide.

    PubMed

    Vörtler, K; Björkas, C; Nordlund, K

    2011-03-02

    Understanding of sputtering by ion bombardment is needed in a wide range of applications. In fusion reactors, ion impacts originating from a hydrogen-isotope-rich plasma will lead, among other effects, to sputtering of the wall material. To study the effect of plasma impurities on the sputtering of the wall mixed material tungsten carbide molecular dynamics simulations were carried out. Simulations of cumulative D cobombardment with C, W, He, Ne or Ar impurities on crystalline tungsten carbide were performed in the energy range 100-300 eV. The sputtering yields obtained at low fluences were compared to steady state SDTrimSP yields. During bombardment single C atom sputtering was preferentially observed. We also detected significant W(x)C(y) molecule sputtering. We found that this molecule sputtering mechanism is of physical origin.

  6. The influence of landing points on the sputtering of mono-crystal solids due to cluster impacting

    NASA Astrophysics Data System (ADS)

    Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

    2017-01-01

    The mechanism of sputtering due to cluster impacting which has been widely studied is an important but unsolved problem. In present research, we discuss the effect of the landing point on the sputtering with the method of molecular dynamics. The results show that the landing points play significant roles on sputter yield when the temperature of target is low. Specific landing points can cause particular sputtering patterns which lead to different sputtering yield and moving directions of sputtered atoms. The mechanism of this phenomenon is that specific landing keeps symmetries and anisotropies of target lattice, which influence the sputtering yield.

  7. Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

    NASA Astrophysics Data System (ADS)

    Lautenschläger, T.; Feder, R.; Neumann, H.; Rice, C.; Schubert, M.; Bundesmann, C.

    2016-10-01

    In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E-n, which is in principle in accordance with Thompson's theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to simulations done with the Monte Carlo code SDTrimSP. Both confirm in principle the experimental findings.

  8. Investigations on RF-magnetron sputtered Co3O4 thin films regarding the solar energy conversion properties

    NASA Astrophysics Data System (ADS)

    Lohaus, C.; Morasch, J.; Brötz, J.; Klein, A.; Jaegermann, W.

    2016-04-01

    Co3O4 samples have been deposited using RF-magnetron sputtering from an oxide target. In situ x-ray and ultraviolet photoelectron spectroscopy and x-ray diffraction have been carried out to identify the phase and composition of the films. The work function of \\text{C}{{\\text{o}}3}{{\\text{O}}4} films showed variation of about 1 eV depending on the oxygen content of the sputter gas while the Fermi level position in the band gap was invariant towards different deposition parameters. Optical transmission spectroscopy in the UV/VIS/NIR regime showed two optical transitions at 0.8 eV and 1.7 eV. However, the optical absorption from these transition does not seem to aid in the conduction of charge carriers as has been revealed by conductivity measurements in a linear 4-point-setup. Diodes were prepared in a glass  | FTO  |   \\text{Ti}{{\\text{O}}2}  |\\text{C}{{\\text{o}}3}{{\\text{O}}4}|  NiO | Au-stacking geometry. They show poor photovoltaic behaviour with a short-circuit current of 0.33 mA cm-1 and an open-circuit voltage of 0.15 V, resulting in an overall efficiency of η =0.01% . The limitation of \\text{C}{{\\text{o}}3}{{\\text{O}}4} as an absorber in an All-Oxide solar cell can be related to poor transport properties combined with defect states in the band gap and Fermi level pinning at interfaces.

  9. Kinetic and Potential Sputtering of Lunar Regolith: The Contribution of the Heavy Highly Charged (Minority) Solar Wind Ions

    NASA Technical Reports Server (NTRS)

    Meyer, F. W.; Barghouty, A. F.

    2012-01-01

    Solar wind sputtering of the lunar surface helps determine the composition of the lunar exosphere and contributes to surface weathering. To date, only the effects of the two dominant solar wind constituents, H+ and He+, have been considered. The heavier, less abundant solar wind constituents have much larger sputtering yields because they have greater mass (kinetic sputtering) and they are highly charged (potential sputtering) Their contribution to total sputtering can therefore be orders of magnitude larger than their relative abundances would suggest

  10. Sputtering deposition and characterization of ultrathin amorphous carbon films

    NASA Astrophysics Data System (ADS)

    Lu, Wei

    1999-11-01

    This dissertation focuses on experimental investigations of ultrathin, ultrasmooth amorphous carbon (a-C) films deposited on Si(100) substrates by radio frequency (RF) sputtering and characterization of the nanomechanical and nanotribological properties and thermal stability of the films. Ultrathin a-C films of thickness 5--100 nm and typical root-mean-square roughness of 0.15--1 nm were deposited on ultrasmooth Si(100) substrates using pure argon as the sputtering gas. A low-pressure RF argon discharge model was used to analyze the plasma parameters in the film growth environment. These plasma parameters correlate the deposition conditions with the film growth processes. Atomic force microscopy (AFM) and surface force microscopy (SFM) were used to characterize the nanomechanical and nanotribological properties of the a-C films. X-ray photoelectron spectroscopy (XPS) was used to investigate the compositions and microstructures of the films. Sputter-etching measurements of the a-C films by energetic argon ion bombardment were used to study the surface binding energy of carbon atoms in a-C films deposited under different conditions. The dependence of film properties on deposition conditions was studied, and relations between nanomechanical and nanotribological properties were discussed in terms of a modified deformation index. The deformation and nanotribology mechanisms of the a-C films were compared with those of other films, such as TiC and Cr films (both 100 nm thick), and bulk Si(100). Reactive RF sputtering of nitrogenated amorphous carbon (a-CNx) films was investigated by introducing nitrogen into the a-C films during film growth by using an argon-nitrogen gas mixture as the sputtering gas. The alloying effect of nitrogen on the film growth and properties, such as hardness and surface energy, was studied and interpreted in terms of the changes in the plasma environment induced due to differences in the composition of the sputtering gas mixture. The thermal

  11. Ionized magnetron sputtering of aluminum(,2)oxygen(,3)

    NASA Astrophysics Data System (ADS)

    Gonzalez, Patrick Fernando

    2000-10-01

    This dissertation shows a detailed study of the conditions necessary for sputtering alumina using a novel variant of ionized magnetron sputtering (IMS) first demonstrated by Yamashita et. al. The study presented herein leverages concurrent research at our laboratory on high density plasmas, plasma characterization and charged particle beams research to demonstrate a new source capable of sputtering hydrated alumina films at high rates. High quality ceramics such as Al2O3 find uses in a variety of applications, and in particular, for mass storage applications. Consequently, there exists an ever-growing need to provide and improve the capability of growing thick insulating films. Ideally, the insulating film should be stoichiometric and able to be grown at rates high enough to be easily manufacturable. Alumina is a particularly attractive due to its high density, Na barrier properties, and stability and radiation resistance. However, high quality films are often difficult to achieve with conventional RF plasma due to extremely slow deposition rates and difficulties associated with system cooling. The preferred method is to reactively sputter Al from a solid target in an O2 ambient. Nevertheless, this process is inherently unstable and leads to arcing and uneven target wear when magnetrons are used. In this study, we build the sputtering source, evaluate, and maximize the deposition characteristics of alumina films sputtered from a solid target in an Ar/O2 ambient. Semi-crystalline (kappa + theta) alumina has been reported using a similar technique at temperatures as low 370 C. The difference in the system used herein is that RF power is used for both, the inductive and capacitive components. Additionally, we use a solid target made of sintered alumina throughout the experiment. A model is developed using regression analysis and compared to results obtained. Because plasma parameters can interact with each other, we explore ICP/CCP power interactions and gas influence

  12. Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

    SciTech Connect

    Pandey, Sushil Kumar; Kumar Pandey, Saurabh; Awasthi, Vishnu; Mukherjee, Shaibal; Gupta, M.; Deshpande, U. P.

    2013-08-12

    Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O{sub 2}/(O{sub 2} + N{sub 2})% from 0% (N{sub 2}) to 100% (O{sub 2}). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O{sub 2} ambient exhibited higher hole concentration as compared with films annealed in vacuum or N{sub 2} ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb{sup 5+} states were more preferable in comparison to Sb{sup 3+} states for acceptor-like Sb{sub Zn}-2V{sub Zn} complex formation in SZO films.

  13. Supported plasma sputtering apparatus for high deposition rate over large area

    DOEpatents

    Moss, Ronald W.; McClanahan, Jr., Edwin D.; Laegreid, Nils

    1977-01-01

    A supported plasma sputtering apparatus is described having shaped electrical fields in the electron discharge region between the cathode and anode and the sputter region between the target and substrate while such regions are free of any externally applied magnetic field to provide a high deposition rate which is substantially uniform over a wide area. Plasma shaping electrodes separate from the anode and target shape the electrical fields in the electron discharge region and the sputter region to provide a high density plasma. The anode surrounds the target to cause substantially uniform sputtering over a large target area. In one embodiment the anode is in the form of an annular ring surrounding a flat target surface, such anode being provided with a ribbed upper surface which shields portions of the anode from exposure to sputtered material to maintain the electron discharge for a long stable operation. Several other embodiments accomplish the same result by using different anodes which either shield the anode from sputtered material, remove the sputtered coating on the anode by heating, or simultaneously mix sputtered metal from the auxiliary target with sputtered insulator from the main target so the resultant coating is conductive. A radio frequency potential alone or together with a D.C. potential, may be applied to the target for a greater sputtering rate.

  14. Sequential sputtered Co-HfO2 granular films

    NASA Astrophysics Data System (ADS)

    Chadha, M.; Ng, V.

    2017-03-01

    A systematic study of magnetic, magneto-transport and micro-structural properties of Co-HfO2 granular films fabricated by sequential sputtering is presented. We demonstrate reduction in ferromagnetic-oxide formation by using HfO2 as the insulting matrix. Microstructure evaluation of the films showed that the film structure consisted of discrete hcp-Co grains embedded in HfO2 matrix. Films with varying compositions were prepared and their macroscopic properties were studied. We correlate the variation in these properties to the variation in film microstructure. Our study shows that Co-HfO2 films with reduced cobalt oxide and varying properties can be prepared using sequential sputtering technique.

  15. Magnetic properties of sputtered Permalloy/molybdenum multilayers

    SciTech Connect

    Romera, M.; Ciudad, D.; Maicas, M.; Aroca, C.

    2011-10-15

    In this work, we report the magnetic properties of sputtered Permalloy (Py: Ni{sub 80}Fe{sub 20})/molybdenum (Mo) multilayer thin films. We show that it is possible to maintain a low coercivity and a high permeability in thick sputtered Py films when reducing the out-of-plane component of the anisotropy by inserting thin film spacers of a non-magnetic material like Mo. For these kind of multilayers, we have found coercivities which are close to those for single layer films with no out-of-plane anisotropy. The coercivity is also dependent on the number of layers exhibiting a minimum value when each single Py layer has a thickness close to the transition thickness between Neel and Bloch domain walls.

  16. Growth and Characterization of Sputtered BSTO/BaM Multilayers

    SciTech Connect

    Srinath, S.; Frey, N. A.; Heindl, R.; Srikanth, H.; Coffey, K. R.; Dudney, Nancy J

    2005-01-01

    Multilayers of Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BSTO) and BaFe{sub 12}O{sub 19} (BaM), with tunable permeability and permittivity are attractive systems for radio frequency and microwave applications. We have grown multilayers of BSTO and BaM using magnetron sputtering on Al{sub 2}O{sub 3} substrates. Film growth conditions such as sputtering parameters were optimized to obtain high quality multilayers. X-ray diffraction established that both BSTO and BaM were formed and cross-sectional SEM studies showed sharp interfaces between BSTO and BaM layers. Magnetization showed a large coercivity ( {approx}2000 Oe) consistent with the hexaferrite component. The hysteresis loops also revealed the distinct influence of magnetocrystalline and shape anisotropies at different temperatures.

  17. Erosion of Extraction Electrodes of Ion Sources due to Sputtering

    NASA Astrophysics Data System (ADS)

    Kenmotsu, Takahiro; Miyamoto, Naoki; Wada, Motoi

    2011-01-01

    The effects upon erosion due to implanted atoms in extraction electrodes of an ion source have been investigated through calculating the sputtering yields with a Monte Carlo simulation code, ACAT. The results obtained with ACAT have indicated that the sputtering yields of extraction electrodes are substantially affected by the retention of implanted atoms depending upon the mass ratio of electrode materials and extracted ions from the source plasma. The enhanced erosion takes place as the heavier ion beam species like phosphor is implanted into lighter electrode material like carbon. Additional mixing of materials arising from ion source operation, such as hot cathode materials evaporation onto a carbon extraction electrode, can shorten the lifetime of the extraction electrodes.

  18. Erosion of Extraction Electrodes of Ion Sources due to Sputtering

    SciTech Connect

    Kenmotsu, Takahiro; Wada, Motoi; Miyamoto, Naoki

    2011-01-07

    The effects upon erosion due to implanted atoms in extraction electrodes of an ion source have been investigated through calculating the sputtering yields with a Monte Carlo simulation code, ACAT. The results obtained with ACAT have indicated that the sputtering yields of extraction electrodes are substantially affected by the retention of implanted atoms depending upon the mass ratio of electrode materials and extracted ions from the source plasma. The enhanced erosion takes place as the heavier ion beam species like phosphor is implanted into lighter electrode material like carbon. Additional mixing of materials arising from ion source operation, such as hot cathode materials evaporation onto a carbon extraction electrode, can shorten the lifetime of the extraction electrodes.

  19. Modeling of metastable phase formation diagrams for sputtered thin films

    PubMed Central

    Chang, Keke; Music, Denis; to Baben, Moritz; Lange, Dennis; Bolvardi, Hamid; Schneider, Jochen M.

    2016-01-01

    Abstract A method to model the metastable phase formation in the Cu–W system based on the critical surface diffusion distance has been developed. The driver for the formation of a second phase is the critical diffusion distance which is dependent on the solubility of W in Cu and on the solubility of Cu in W. Based on comparative theoretical and experimental data, we can describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation. Metastable phase formation diagrams for Cu–W and Cu–V thin films are predicted and validated by combinatorial magnetron sputtering experiments. The correlative experimental and theoretical research strategy adopted here enables us to efficiently describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation during magnetron sputtering. PMID:27877871

  20. Very low pressure high power impulse triggered magnetron sputtering

    DOEpatents

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  1. Energy spectrum of sputtered uranium - A new technique

    NASA Technical Reports Server (NTRS)

    Weller, R. A.; Tombrello, T. A.

    1978-01-01

    The fission track technique for detecting U-235 has been used in conjunction with a mechanical time-of-flight spectrometer in order to measure the energy spectrum in the region 1 eV to 1 keV of material sputtered from a 93% enriched U-235 foil by 80 keV Ar-40(+) ions. The spectrum was found to exhibit a peak in the region 2-4 eV and to decrease approximately as E exp -1.77 for E not less than 100 eV. The design, construction and resolution of the mechanical spectrometer are discussed and comparisons are made between the data and the predictions of the random collision cascade model of sputtering.

  2. Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

    PubMed Central

    2015-01-01

    Silicon nanowires of various diameters were irradiated with 100 keV and 300 keV Ar+ ions on a rotatable and heatable stage. Irradiation at elevated temperatures above 300 °C retains the geometry of the nanostructure and sputtering can be gauged accurately. The diameter dependence of the sputtering shows a maximum if the ion range matches the nanowire diameter, which is in good agreement with Monte Carlo simulations based on binary collisions. Nanowires irradiated at room temperature, however, amorphize and deform plastically. So far, plastic deformation has not been observed in bulk silicon at such low ion energies. The magnitude and direction of the deformation is independent of the ion-beam direction and cannot be explained with mass-transport in a binary collision cascade but only by collective movement of atoms in the collision cascade with the given boundary conditions of a high surface to volume ratio. PMID:25951108

  3. Darkening of silicate rock powders by solar wind sputtering.

    NASA Technical Reports Server (NTRS)

    Hapke, B.

    1973-01-01

    Hydrogen ion irradiation of powdered igneous rocks, including Apollo rocks, has been observed in the laboratory to darken the powders and to make their optical properties similar to the moon's. An extensive series of investigations shows that this darkening is not spurious. These results are consistent with those of other investigators, including Nash (1967). Darkening of lunar igneous rock powders by the formation of solar wind-sputtered glass films is a real process which occurs on the moon. The time scale for darkening of undisturbed lunar soil is of the order of 50,000-100,000 yr. Comparison of the rates of the formation of glasses on the lunar surface by solar wind sputter-deposition, meteorite impact melting, and impact vaporization-deposition indicates that these processes are of comparable importance under the present flux of meteorites.

  4. A method for sputtering with low frequency alternating current

    SciTech Connect

    Timberlake, J.R.

    1993-12-31

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating currentThe center tap of the tmsformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the ftwsformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

  5. Sputtering yield of Pu bombarded by fission Fragments from Cf

    SciTech Connect

    Danagoulian, Areg; Klein, Andreas; Mcneil, Wendy V; Yuan, Vincent W

    2008-01-01

    We present results on the yield of sputtering of Pu atoms from a Pu foil, bombarded by fission fragments from a {sup 252}Cf source in transmission geometry. We have found the number of Pu atoms/incoming fission fragments ejected to be 63 {+-} 1. In addition, we show measurements of the sputtering yield as a function of distance from the central axis, which can be understood as an angular distribution of the yield. The results are quite surprising in light of the fact that the Pu foil is several times the thickness of the range of fission fragment particles in Pu. This indicates that models like the binary collision model are not sufficient to explain this behavior.

  6. Energy distributions of sputtered copper neutrals and ions

    NASA Technical Reports Server (NTRS)

    Lundquist, T. R.

    1978-01-01

    Direct quantitative analysis of surfaces by secondary ion mass spectrometry will depend on an understanding of the yield ratio of ions to neutrals. This ratio as a function of the energy of the sputtered particles has been obtained for a clean polycrystalline copper surface sputtered by 1000-3000 eV Ar(+). The energy distributions of both neutral and ionized copper were measured with a retarding potential analyzer using potential modulation differentiation and signal averaging. The maximum for both distributions is identical and occurs near 2.5 eV. The energy distributions of neutrals is more sharply peaked than that of the ions, presumably as a consequence of more efficient nutralization of slow escaping ions by the mobile electrons of copper. The ion-neutral ratio is compared with results from various ionization models.

  7. Physicochemical model for reactive sputtering of hot target

    NASA Astrophysics Data System (ADS)

    Shapovalov, Viktor I.; Karzin, Vitaliy V.; Bondarenko, Anastasia S.

    2017-02-01

    A physicochemical model for reactive magnetron sputtering of a metal target is described in this paper. The target temperature in the model is defined as a function of the ion current density. Synthesis of the coating occurs due to the surface chemical reaction. The law of mass action, the Langmuir isotherm and the Arrhenius equation for non-isothermal conditions were used for mathematical description of the reaction. The model takes into consideration thermal electron emission and evaporation of the target surface. The system of eight algebraic equations, describing the model, was solved for the tantalum target sputtered in the oxygen environment. It was established that the hysteresis effect disappears with the increase of the ion current density.

  8. Towards an optimised sputtered MoS2 lubricant film

    NASA Technical Reports Server (NTRS)

    Roberts, E. W.

    1986-01-01

    It is shown that the tribological quality of MoS2 lubricant films formed by magnetron sputtering is determined by the choice of sputtering conditions. By selecting the appropriate conditions, films of extremely high lubricity and endurance (in vacuum), which are well suited to many space applications, are obtained. Such MoS2 films, when applied to precision ball hearings, give rise to the lowest torques (for the given test conditions) yet seen in our laboratory. While a remarkably good performance is obtained in vacuum, tests in air show a marked deterioration in lubricating qualities. It is demonstrated that this is attributable to the adsorption of water vapor on MoS2 surfaces and that the degree of deterioration is related to the partial pressure of water vapor present. Analysis of results indicates that the factors relevant to obtaining optimum films are deposition rate and film composition.

  9. Angular distribution of particles sputtered from metals and alloys

    SciTech Connect

    Wucher, A.; Reuter, W.

    1988-07-01

    The angular distributions of atoms sputtered from pure Cu and Be as well as Cu/sub 98/Be/sub 2/, Cu/sub 71/Zn/sub 29/, Co/sub 3/Au, and WSi/sub 2.3/ were investigated for bombardment with Ar/sup +/ ions of 250 eV and 2 keV under normal incidence. Between polar emission angles theta = 0/sup 0/ and 60/sup 0/, for the higher bombarding energy all observed angular distributions look very much alike and follow essentially a cos/sup 3/ theta law. For the low bombarding energy, however, significant differences between the angular distributions of the alloy constituents are found. The effect, which is most pronounced for CuBe, seems to scale with the atomic mass in the way that the lower mass particles are sputtered preferentially along the surface normal.

  10. Surface biasing influence on the physical sputtering in fusion devices

    NASA Astrophysics Data System (ADS)

    Borodkina, I.; Borodin, D.; Brezinsek, S.; Tsvetkov, I. V.; Kurnaev, V. A.; Klepper, C. C.; Lasa, A.; Kreter, A.; Contributors, JET

    2016-09-01

    A new simplified analytical expression for the electromagnetic field in the Debye sheath in the presence of an oblique magnetic field including surface biasing effect is suggested. It is in good agreement with the numerical solution of the integral equation for the potential distribution in the Debye sheath. The energy and angular impact distributions and corresponding surface sputtering yields were analyzed in the presence of an oblique magnetic field and surface biasing. The analytical expression was used to estimate a) the effective sputtering yield of the W target with a varying negative voltage against plasma in PSI-2 linear device and b) erosion of the JET outer wall Be limiter near the ICRH antenna enhanced during RF emission.

  11. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, J.R.

    1996-04-30

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking. 6 figs.

  12. Method for sputtering with low frequency alternating current

    DOEpatents

    Timberlake, John R.

    1996-01-01

    Low frequency alternating current sputtering is provided by connecting a low frequency alternating current source to a high voltage transformer having outer taps and a center tap for stepping up the voltage of the alternating current. The center tap of the transformer is connected to a vacuum vessel containing argon or helium gas. Target electrodes, in close proximity to each other, and containing material with which the substrates will be coated, are connected to the outer taps of the transformer. With an applied potential, the gas will ionize and sputtering from the target electrodes onto the substrate will then result. The target electrodes can be copper or boron, and the substrate can be stainless steel, aluminum, or titanium. Copper coatings produced are used in place of nickel and/or copper striking.

  13. Growth and characterization of sputtered BSTO/BaM multilayers

    NASA Astrophysics Data System (ADS)

    Srinath, S.; Frey, N. A.; Heindl, R.; Srikanth, H.; Coffey, K. R.; Dudney, N. J.

    2005-05-01

    Multilayers of Ba0.5Sr0.5TiO3 (BSTO) and BaFe12O19 (BaM), with tunable permeability and permittivity are attractive systems for radio frequency and microwave applications. We have grown multilayers of BSTO and BaM using magnetron sputtering on Al2O3 substrates. Film growth conditions such as sputtering parameters were optimized to obtain high quality multilayers. X-ray diffraction established that both BSTO and BaM were formed and cross-sectional SEM studies showed sharp interfaces between BSTO and BaM layers. Magnetization showed a large coercivity (˜2000Oe ) consistent with the hexaferrite component. The hysteresis loops also revealed the distinct influence of magnetocrystalline and shape anisotropies at different temperatures.

  14. Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires.

    PubMed

    Johannes, Andreas; Noack, Stefan; Wesch, Werner; Glaser, Markus; Lugstein, Alois; Ronning, Carsten

    2015-06-10

    Silicon nanowires of various diameters were irradiated with 100 keV and 300 keV Ar(+) ions on a rotatable and heatable stage. Irradiation at elevated temperatures above 300 °C retains the geometry of the nanostructure and sputtering can be gauged accurately. The diameter dependence of the sputtering shows a maximum if the ion range matches the nanowire diameter, which is in good agreement with Monte Carlo simulations based on binary collisions. Nanowires irradiated at room temperature, however, amorphize and deform plastically. So far, plastic deformation has not been observed in bulk silicon at such low ion energies. The magnitude and direction of the deformation is independent of the ion-beam direction and cannot be explained with mass-transport in a binary collision cascade but only by collective movement of atoms in the collision cascade with the given boundary conditions of a high surface to volume ratio.

  15. Modeling of metastable phase formation diagrams for sputtered thin films.

    PubMed

    Chang, Keke; Music, Denis; To Baben, Moritz; Lange, Dennis; Bolvardi, Hamid; Schneider, Jochen M

    2016-01-01

    A method to model the metastable phase formation in the Cu-W system based on the critical surface diffusion distance has been developed. The driver for the formation of a second phase is the critical diffusion distance which is dependent on the solubility of W in Cu and on the solubility of Cu in W. Based on comparative theoretical and experimental data, we can describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation. Metastable phase formation diagrams for Cu-W and Cu-V thin films are predicted and validated by combinatorial magnetron sputtering experiments. The correlative experimental and theoretical research strategy adopted here enables us to efficiently describe the relationship between the solubilities and the critical diffusion distances in order to model the metastable phase formation during magnetron sputtering.

  16. Step edge sputtering yield at grazing incidence ion bombardment.

    PubMed

    Hansen, Henri; Polop, Celia; Michely, Thomas; Friedrich, Andreas; Urbassek, Herbert M

    2004-06-18

    The surface morphology of Pt(111) was investigated by scanning tunneling microscopy after 5 keV Ar+ ion bombardment at grazing incidence in dependence of the ion fluence and in the temperature range between 625 and 720 K. The average erosion rate was found to be strongly dependent on the ion fluence and the substrate temperature during bombardment. This dependence is traced back to the variation of step concentration with temperature and fluence. We develop a simple model allowing us to determine separately the constant sputtering yields for terraces and for impact area stripes in front of ascending steps. The experimentally determined yield of these stripes--the step-edge sputtering yield--is in excellent agreement with our molecular dynamics simulations performed for the experimental situation.

  17. Diode-pumped laser altimeter

    NASA Technical Reports Server (NTRS)

    Welford, D.; Isyanova, Y.

    1993-01-01

    TEM(sub 00)-mode output energies up to 22.5 mJ with 23 percent slope efficiencies were generated at 1.064 microns in a diode-laser pumped Nd:YAG laser using a transverse-pumping geometry. 1.32-micron performance was equally impressive at 10.2 mJ output energy with 15 percent slope efficiency. The same pumping geometry was successfully carried forward to several complex Q-switched laser resonator designs with no noticeable degradation of beam quality. Output beam profiles were consistently shown to have greater than 90 percent correlation with the ideal TEM(sub 00)-order Gaussian profile. A comparison study on pulse-reflection-mode (PRM), pulse-transmission-mode (PTM), and passive Q-switching techniques was undertaken. The PRM Q-switched laser generated 8.3 mJ pulses with durations as short as 10 ns. The PTM Q-switch laser generated 5 mJ pulses with durations as short as 5 ns. The passively Q-switched laser generated 5 mJ pulses with durations as short as 2.4 ns. Frequency doubling of both 1.064 microns and 1.32 microns with conversion efficiencies of 56 percent in lithium triborate and 10 percent in rubidium titanyl arsenate, respectively, was shown. Sum-frequency generation of the 1.064 microns and 1.32 microns radiations was demonstrated in KTP to generate 1.1 mJ of 0.589 micron output with 11.5 percent conversion efficiency.

  18. Percutaneous diode laser disc nucleoplasty

    NASA Astrophysics Data System (ADS)

    Menchetti, P. P.; Longo, Leonardo

    2004-09-01

    The treatment of herniated disc disease (HNP) over the years involved different miniinvasive surgical options. The classical microsurgical approach has been substituted over the years both by endoscopic approach in which is possible to practice via endoscopy a laser thermo-discoplasty, both by percutaneous laser disc nucleoplasty. In the last ten years, the percutaneous laser disc nucleoplasty have been done worldwide in more than 40000 cases of HNP. Because water is the major component of the intervertebral disc, and in HNP pain is caused by the disc protrusion pressing against the nerve root, a 980 nm Diode laser introduced via a 22G needle under X-ray guidance and local anesthesia, vaporizes a small amount of nucleous polposus with a disc shrinkage and a relief of pressure on nerve root. Most patients get off the table pain free and are back to work in 5 to 7 days. Material and method: to date, 130 patients (155 cases) suffering for relevant symptoms therapy-resistant 6 months on average before consulting our department, have been treated. Eightyfour (72%) males and 46 (28%) females had a percutaneous laser disc nucleoplasty. The average age of patients operated was 48 years (22 - 69). The level of disc removal was L3/L4 in 12 cases, L4/L5 in 87 cases and L5/S1 in 56 cases. Two different levels were treated at the same time in 25 patients. Results: the success rate at a minimum follow-up of 6 months was 88% with a complication rate of 0.5%.

  19. Method and apparatus for improved high power impulse magnetron sputtering

    DOEpatents

    Anders, Andre

    2013-11-05

    A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 .mu.s.

  20. Sputtering and codeposition of silicon carbide with deuterium

    NASA Astrophysics Data System (ADS)

    Causey, Rion A.

    2003-03-01

    Due to its excellent thermal properties, silicon carbide is being considered as a possible plasma-facing material for fusion devices. If used as a plasma-facing material, the energetic hydrogen isotope ions and charge-exchanged neutrals escaping from the plasma will sputter the silicon carbide. To assess the tritium inventory problems that will be generated by the use of this material, it is necessary that we know the codeposition properties of the redeposited silicon carbide. To determine the codeposition properties, the deuterium plasma experiment at Sandia National Laboratories in Livermore, California has been used to directly compare the deuterium sputtering and codeposition of silicon carbide with that of graphite. A Penning discharge at a flux of 6×10 19 D/m 2 and an energy of ≈300 eV was used to sputter silicon and carbon from a pair of 0.05 m diameter silicon carbide disks. The removal rate of deuterium gas from the fixed volume of the system isolated from all other sources and sinks was used to measure the codeposition probability (probability that a hydrogen isotope atom will be removed through codeposition per ion striking the sample surface). A small catcher plate used to capture a fraction of the codeposited film was analyzed using Auger spectroscopy. This analysis showed the film to begin with a high carbon to silicon ratio due to preferential sputtering of the carbon. As the film became thicker, the ratio of the depositing material changed over to the (1:1) value that must eventually be attained.

  1. Superconductivity in sputtered CuMO6S8

    NASA Technical Reports Server (NTRS)

    Alterovitz, S.; Woollam, J. A.; Kammerdiner, L.; Luo, H. L.; Martin, C.

    1977-01-01

    Samples were prepared by melting the metals, followed by annealing to various temperatures. The result was a structurally weak material. Sputtered films on sapphire substrates were prepared and studied. The substrates give the films mechanical strength and permit easy attachment of electrical leads. Materials were characterized by X-ray diffraction, electron microscopy, electrical resistance vs. temperature, and critical current measurements. Some of the results on CuMo6S8 are presented.

  2. Modeling of the Sputtering Efficiency for Martian Atmosphere

    NASA Astrophysics Data System (ADS)

    Wang, Y.; Luhmann, J. G.; Leblanc, F.; Fang, X.; Johnson, R. E.; Ma, Y.; Ip, W.; Li, L.

    2012-12-01

    The formation of a hot corona with the related escape rate of the oxygen atoms is an important issue affecting the evolution of the Marian atmosphere. While the dissociative recombination process appears to dominate the non-thermal escaping rate of the oxygen atoms, atmospheric sputtering by the re-impact of the pickup exospheric ions could have played a role in earlier epochs and at solar maximum in the present epoch. Due to the orientation of the interplanetary magnetic fields and the shielding of the crustal fields near Mar's surface, the pickup ions may re-impact the atmosphere with a variety of angles, energies, and spatial distributions. While night-side sputtering is suggested to occur based on modeling (Li et al., 2011), the sputter component due to pickup ion impacts on the oxygen corona can be distinguished from other ejection mechanisms, such as dissociative recombination. In preparation for the Maven mission, we performed a Monte Carlo model of the upper atmosphere coupled to a molecular dynamic calculation for the molecular collisions developed by Leblanc and Johnson (2002) to study the cascade sputtering effects in the region of the Martian exobase. Different incident angle and energy spectrum of the impact ions were tested. Further calculations with more realistic pickup ion impact distributions will be performed based on the numerical results of a 3D Monte Carlo Pickup Ion Transport model, which includes the electromagnetic backgrounds from the 3D multi-species MHD simulations (Y. Ma et al., 2004; Y. Ma and A. F. Nagy, 2007).

  3. Using sputter coated glass to stabilize microstrip gas chambers

    DOEpatents

    Gong, Wen G.

    1997-01-01

    By sputter coating a thin-layer of low-resistive, electronically-conductive glass on various substrates (including quartz and ceramics, thin-film Pestov glass), microstrip gas chambers (MSGC) of high gain stability, low leakage current, and a high rate capability can be fabricated. This design can make the choice of substrate less important, save the cost of ion-implantation, and use less glass material.

  4. Retention of Sputtered Molybdenum on Ion Engine Discharge Chamber Surfaces

    NASA Technical Reports Server (NTRS)

    Sovey, James S.; Dever, Joyce A.; Power, John L.

    2001-01-01

    Grit-blasted anode surfaces are commonly used in ion engines to ensure adherence of sputtered coatings. Next generation ion engines will require higher power levels, longer operating times, and thus there will likely be thicker sputtered coatings on their anode surfaces than observed to date on 2.3 kW-class xenon ion engines. The thickness of coatings on the anode of a 10 kW, 40-centimeter diameter thruster, for example, may be 22 micrometers or more after extended operation. Grit-blasted wire mesh, titanium, and aluminum coupons were coated with molybdenum at accelerated rates to establish coating stability after the deposition process and after thermal cycling tests. These accelerated deposition rates are roughly three orders of magnitude more rapid than the rates at which the screen grid is sputtered in a 2.3 kW-class, 30-centimeter diameter ion engine. Using both RF and DC sputtering processes, the molybdenum coating thicknesses ranged from 8 to 130 micrometers, and deposition rates from 1.8 micrometers per hour to 5.1 micrometers per hour. In all cases, the molybdenum coatings were stable after the deposition process, and there was no evidence of spalling of the coatings after 20 cycles from about -60 to +320 C. The stable, 130 micrometer molybdenum coating on wire mesh is 26 times thicker than the thickest coating found on the anode of a 2.3 kW, xenon ion engine that was tested for 8200 hr. Additionally, this coating on wire mesh coupon is estimated to be a factor of greater than 4 thicker than one would expect to obtain on the anode of the next generation ion engine which may have xenon throughputs as high as 550 kg.

  5. In vitro flow measurements in ion sputtered hydrocephalus shunts

    NASA Technical Reports Server (NTRS)

    Cho, Y. I.; Back, L. H.

    1989-01-01

    This paper describes an experimental procedure for accurate measurements of the pressure-drop/flow rate relationship in hydrocephalus shunts. Using a fish-hook arrangement, small flow rates in a perforated ion-sputtered Teflon microtubule were measured in vitro in a pressured system and were correlated with pressure in the system. Results indicate that appropriate drainage rates could be obtained in the physiological range for hydrocephalus shunts.

  6. Magnetron sputtering in rigid optical solar reflectors production

    NASA Astrophysics Data System (ADS)

    Asainov, O. Kh; Bainov, D. D.; Krivobokov, V. P.; Sidelev, D. V.

    2016-07-01

    Magnetron sputtering was applied to meet the growing need for glass optical solar reflectors. This plasma method provided more uniform deposition of the silver based coating on glass substrates resulted in decrease of defective reflectors fraction down to 5%. For instance, such parameter of resistive evaporation was of 30%. Silver film adhesion to glass substrate was enhanced with indium tin oxide sublayer. Sunlight absorption coefficient of these rigid reflectors was 0.081-0.083.

  7. Plasma regimes in high power pulsed magnetron sputtering

    NASA Astrophysics Data System (ADS)

    de Los Arcos, Teresa

    2013-09-01

    High Power Pulsed Magnetron Sputtering (HPPMS) is a relatively recent variation of magnetron sputtering where high power is applied to the magnetron in short pulses. The result is the formation of dense transient plasmas with a high fraction of ionized species, ideally leading to better control of film growth through substrate bias. However, the broad range of experimental conditions accessible in pulsed discharges results in bewildering variations in current and voltage pulse shapes, pulse power densities, etc, which represent different discharge behaviors, making it difficult to identify relevant deposition conditions. The complexity of the plasma dynamics is evident. Within each pulse, plasma characteristics such as plasma composition, density, gas rarefaction, spatial distribution, degree of self-sputtering, etc. vary with time. A recent development has been the discovery that the plasma emission can self-organize into well-defined regions of high and low plasma emissivity above the racetrack (spokes), which rotate in the direction given by the E ×B drift and that significantly influence the transport mechanisms in HPPMS. One seemingly universal characteristic of HPPMS plasmas is the existence of well defined plasma regimes for different power ranges. These regimes are clearly differentiated in terms of plasma conductivity, plasma composition and spatial plasma self-organization. We will discuss the global characteristics of these regimes in terms of current-voltage characteristics, energy-resolved QMS and OES analysis, and fast imaging. In particular we will discuss how the reorganization of the plasma emission into spokes is associated only to specific regimes of high plasma conductivity. We will also briefly discuss the role of the target in shaping the characteristics of the HPPMS plasma, since sputtering is a surface-driven process. This work was supported by the Deutsche Forschungsgemeinschaft (DFG) within the framework of the SFB-TR87.

  8. Obsidian hydration profiles measured by sputter-induced optical emission.

    PubMed

    Tsong, I S; Houser, C A; Yusef, N A; Messier, R F; White, W B; Michels, J W

    1978-07-28

    The variation of concentrations of hydrogen, sodium, potassium, lithium, calcium, magnesium, silicon, and aluminum as a function of depth in the hydration layer of obsidian artifacts has been determined by sputter-induced optical emission. The surface hydration is accompanied by dealkalization, and there is a buildup of alkaline earths, calcium and magnesium in the outermost layers. These results have clarified the phenomena underlying the obsidian hydration dating technique.

  9. Calculating Sputter Rate Angular Dependence Using Optical Profilometry (Preprint)

    DTIC Science & Technology

    2007-07-26

    This work attempts to determine angular dependence curves for sputter rates of a material based on a single experimental measurement. An aluminum...angular dependence curve to match the given erosion profile. The calculated profile matched well with the experimental profile; however, neither matched...the optimization routine, the angular dependence curve was input to the COLISEUM plasma modeling code, which generated the same erosion profile as the experimental data.

  10. Energy and angular distributions of sputtered atoms at normal incidence

    NASA Astrophysics Data System (ADS)

    Yamamura, Y.; Takiguchi, T.; Ishida, M.

    1991-12-01

    The Monte Carlo simulation code ACAT has been applied to investigate the angular distribution and the energy distribution of atoms sputtered from Cu and Nb targets by normally incident Ar+ ions. It is found that there are two important effects which affect the angular distributions and the energy distributions of sputtered atoms, i.e., the anisotropic effect and the bulk recoil effect. The former effects means that the recoil flux keeps the memory of the incident ion-beam direction because of the incomplete cascade, while the latter one means the contributions of recoils generated at the deeper layer to the angular and the energy distributions of sputtered atoms. The anisotropic effect is important in the low energy region, and it makes the angular distribution under-cosine and the high energy tail of the energy distribution fall off faster than the Thompson distribution. The bulk recoil effect makes angular distribution be over-cosine and the peak position of the energy distribution be shifted to somewhat higher energies.

  11. Stress dependent oxidation of sputtered niobium and effects on superconductivity

    SciTech Connect

    David Henry, M. Wolfley, Steve; Monson, Todd; Clark, Blythe G.; Shaner, Eric; Jarecki, Robert

    2014-02-28

    We report on the suppression of room temperature oxidation of DC sputtered niobium films and the effects upon the superconductive transition temperature, T{sub c}. Niobium was sputter-deposited on silicon dioxide coated 150 mm wafers and permitted to oxidize at room temperature and pressure for up to two years. Resistivity and stress measurements indicate that tensile films greater than 400 MPa resist bulk oxidation with measurements using transmission electron microscope, electron dispersive X-ray spectroscopy, x-ray photoelectric spectroscopy, and secondary ion mass spectrometry confirming this result. Although a surface oxide, Nb{sub 2}O{sub 5}, consumed the top 6–10 nm, we measure less than 1 at. % oxygen and nitrogen in the bulk of the films after the oxidation period. T{sub c} measurements using a SQUID magnetometer indicate that the tensile films maintained a T{sub c} approaching the dirty superconductive limit of 8.4 K after two years of oxidation while maintaining room temperature sheet resistance. This work demonstrates that control over niobium film stress during deposition can prevent bulk oxidation by limiting the vertical grain boundaries ability to oxidize, prolonging the superconductive properties of sputtered niobium when exposed to atmosphere.

  12. Sputter deposited Terfenol-D thin films for multiferroic applications

    NASA Astrophysics Data System (ADS)

    Mohanchandra, K. P.; Prikhodko, S. V.; Wetzlar, K. P.; Sun, W. Y.; Nordeen, P.; Carman, G. P.

    2015-09-01

    In this paper, we study the sputter deposition and crystallization process to produce high quality Terfenol-D thin film (100 nm) with surface roughness below 1.5 nm. The Terfenol-D thin film was produced using DC magnetron sputtering technique with various sputtering parameters and two different crystallization methods, i.e. substrate heating and post-annealing. Several characterization techniques including WDS, XRD, TEM, AFM, SQUID and MOKE were used to determine the physical and magnetic properties of the Terfenol-D films. TEM studies reveal that the film deposited on the heated substrate has large grains grown along the film thickness producing undesirable surface roughness while the film crystallized by post-annealing method shows uniformly distributed small grains producing a smooth surface. The Terfenol-D film was also deposited onto (011) cut PMN-PT single crystal substrate. With the application of an electric field the film exhibited a 1553 Oe change in coercivity with an estimated saturation magnetostriction of λs = 910 x 10-6.

  13. Sputtering as a Technique for Applying Tribological Coatings

    NASA Technical Reports Server (NTRS)

    Ramalingam, S.

    1984-01-01

    Friction and wear-induced mechanical failures may be controlled to extend the life of tribological components through the interposition of selected solid materials between contacting surfaces. Thin solid films of soft and hard materials are appropriate to lower friction and enhance the wear resistance of precision tribo-elements. Tribological characteristics of thin hard coats deposited on a variety of ferrous and non-ferrous substrates were tested. The thin hard coats used were titanium nitride films deposited by reactive magnetron sputtering of metallic titanium. High contact stress, low speed tests showed wear rate reductions of one or more magnitude, even with films a few micrometers in thickness. Low contact stress, high speed tests carried out under rather severe test conditions showed that thin films of TiN afforded significant friction reduction and wear protection. Thin hard coats were shown to improve the friction and wear performance of rolling contacts. Satisfactory film-to-substrate adhesion strengths can be obtained with reactive magnetron sputtering. X-ray diffraction and microhardness tests were employed to assess the effectiveness of the sputtering technique.

  14. Binding energy effects in cascade evolution and sputtering

    SciTech Connect

    Robinson, M.T.

    1995-06-01

    The MARLOWE model was extended to include a binding energy dependent on the local crystalline order, so that atoms are bound less strongly to their lattice sites near surfaces or associated damage. Sputtering and cascade evolution were studied on the examples of self-ion irradiations of Cu and Au monocrystals. In cascades, the mean binding energy is reduced {approximately}8% in Cu with little dependence on the initial recoil energy; in Au, it is reduced {approximately}9% at 1 keV and {approximately}15% at 100 keV. In sputtering, the mean binding energy is reduced {approximately}8% in Cu and {approximately}15% in Au with little energy dependence; the yields are increased about half as much. Most sites from which sputtered atoms originate are isolated in both metals. Small clusters of such sites occur in Cu, but there are some large clusters in Au, especially in [111] targets. There are always more large clusters with damage-dependent binding than with a constant binding energy, but only a few clusters are compact enough to be regarded as pits.

  15. Low Energy Sputtering Experiments for Ion Engine Lifetime Assessment

    NASA Technical Reports Server (NTRS)

    Duchemin Olivier B.; Polk, James E.

    1999-01-01

    The sputtering yield of molybdenum under xenon ion bombardment was measured using a Quartz Crystal Microbalance. The measurements were made for ion kinetic energies in the range 100-1keV on molybdenum films deposited by magnetron sputtering in conditions optimized to reproduce or approach bulk-like properties. SEM micrographs for different anode bias voltages during the deposition are compared, and four different methods were implemented to estimate the density of the molybdenum films. A careful discussion of the Quartz Crystal Microbalance is proposed and it is shown that this method can be used to measure mass changes that are distributed unevenly on the crystal electrode surface, if an analytical expression is known for the differential mass-sensitivity of the crystal and the erosion profile. Finally, results are presented that are in good agreement with previously published data, and it is concluded that this method holds the promise of enabling sputtering yield measurements at energies closer to the threshold energy in the very short term.

  16. Stress dependent oxidation of sputtered niobium and effects on superconductivity

    NASA Astrophysics Data System (ADS)

    David Henry, M.; Wolfley, Steve; Monson, Todd; Clark, Blythe G.; Shaner, Eric; Jarecki, Robert

    2014-02-01

    We report on the suppression of room temperature oxidation of DC sputtered niobium films and the effects upon the superconductive transition temperature, Tc. Niobium was sputter-deposited on silicon dioxide coated 150 mm wafers and permitted to oxidize at room temperature and pressure for up to two years. Resistivity and stress measurements indicate that tensile films greater than 400 MPa resist bulk oxidation with measurements using transmission electron microscope, electron dispersive X-ray spectroscopy, x-ray photoelectric spectroscopy, and secondary ion mass spectrometry confirming this result. Although a surface oxide, Nb2O5, consumed the top 6-10 nm, we measure less than 1 at. % oxygen and nitrogen in the bulk of the films after the oxidation period. Tc measurements using a SQUID magnetometer indicate that the tensile films maintained a Tc approaching the dirty superconductive limit of 8.4 K after two years of oxidation while maintaining room temperature sheet resistance. This work demonstrates that control over niobium film stress during deposition can prevent bulk oxidation by limiting the vertical grain boundaries ability to oxidize, prolonging the superconductive properties of sputtered niobium when exposed to atmosphere.

  17. Efficient millimeter wave 1140 GHz/ diode for harmonic power generation

    NASA Technical Reports Server (NTRS)

    1967-01-01

    Epitaxial gallium arsenide diode junction formed in a crossed waveguide structure operates as a variable reactance harmonic generator. This varactor diode can generate power efficiently in the low-millimeter wavelength.

  18. Destructive Single-Event Failures in Schottky Diodes

    NASA Technical Reports Server (NTRS)

    Casey, Megan C.; Lauenstein, Jean-Marie; Gigliuto, Robert A.; Wilcox, Edward P.; Phan, Anthony M.; Kim, Hak; Chen, Dakai; LaBel, Kenneth A.

    2014-01-01

    This presentation contains test results for destructive failures in DC-DC converters. We have shown that Schottky diodes are susceptible to destructive single-event effects. Future work will be completed to identify parameter that determines diode susceptibility.

  19. Picosecond pulsed diode ring laser gyroscope

    SciTech Connect

    Rosker, M.J.; Christian, W.R.; McMichael, I.C.

    1994-12-31

    An external ring cavity containing as its active medium a pair of InGaAsP diodes is modelocked to produce picosecond pulses. In such a laser, a small frequency difference proportional to the nonreciprocal phase shift (resulting from, e.g., the Sagnac effect) can be observed by beating together the counter propagating laser arms; the device therefore acts as a rotating sensor. In contrast to a conventional (cw) ring laser gyroscope, the pulsed gyroscope can avoid gain competition, thereby enabling the use of homogeneously broadened gain media like semiconductor diodes. Temporal separation of the pulses within the cavity also discriminates against frequency locking of the lasers. The picosecond pulsed diode ring laser gyroscope is reviewed. Both active and passive modelocking are discussed.

  20. Diode laser and endoscopic laser surgery.

    PubMed

    Sullins, Kenneth E

    2002-05-01

    Two functionally important differences exist between the diode laser and the carbon dioxide (CO2) laser (used more commonly in small animal surgery). Diode laser energy is delivered through a quartz fiber instead of being reflected through an articulated arm or waveguide. Quartz fibers are generally more flexible and resilient than waveguides and can be inserted through an endoscope for minimally invasive procedures. Laser-tissue interaction is the other significant difference. The CO2 laser is completely absorbed by water, which limits the effect to visible tissue. The diode wavelength is minimally absorbed by water and may affect tissue as deep as 10 mm below the surface in the free-beam mode. With proper respect for the tissue effect, these differences can be used to the advantage of the patient.

  1. Diode-quad bridge circuit means

    NASA Technical Reports Server (NTRS)

    Harrison, D. R.; Dimeff, J. (Inventor)

    1975-01-01

    Diode-quad bridge circuit means is described for use as a transducer circuit or as a discriminator circuit. It includes: (1) a diode bridge having first, second, third, and fourth bridge terminals consecutively coupled together by four diodes polarized in circulating relationship; (2) a first impedance connected between the second bridge terminal and a circuit ground; (3) a second impedance connected between the fourth bridge terminal and the circuit ground; (4) a signal source having a first source terminal capacitively coupled to the first and third bridge terminals, and a second source terminal connected to the circuit ground; and (5) an output terminal coupled to the first bridge terminal and at which an output signal may be taken.

  2. Optical communications. V - Light emitting diodes /LED/

    NASA Astrophysics Data System (ADS)

    Best, S. W.

    1980-10-01

    The process of assembling diode chips is discussed, along with their application in optical communications. Metal plating is performed with an evaporation technique using primarily AuGe on the back side and Al or AuZn on the front side. The assembling of LED-chips with metal casings is illustrated. The chip is mounted on a flat bottom plate and electrical contact is established by means of an alloying or adhesion procedure. A glass fiber can be attached to the diode and then fitted with a casing, or the diode can be assembled with a metal cap and a lense, or with an open cap that is sealed with a clear synthetic resin plastic. The typical emission spectra of an LED and a semiconductor laser are compared. Limitations in the operation of an LED in a photoconductor are examined, taking into account spectral line width and radiated power criteria.

  3. Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM

    NASA Astrophysics Data System (ADS)

    Hofsäss, H.; Zhang, K.; Mutzke, A.

    2014-08-01

    A quantitative simulation of ion beam sputtering and related collision cascade effects is essential for applications of ion beam irradiation in thin film deposition, surface treatment and sculpting with focused ion beams, ion beam smoothing of surfaces and ion-induced nanopattern formation. The understanding of fundamental ion-solid interaction processes relevant for nanostructure formation, ion-induced mass redistribution, sputter yield amplification, ion beam mixing and dynamic compositional changes requires reliable simulations of ion-solid interaction processes in particular at low ion energies. In this contribution we discuss the possibilities, the key benefits and the limitations of three popular binary collision Monte Carlo simulation programs (SDTrimSP, TRIDYN and SRIM). The focus will be set to the calculation of angle dependent sputter yields, angular distribution of sputtered particles, sputter yields for compound materials, sputter yield amplification effects, as well as the extraction of parameters relevant for modeling ion-induced surface pattern formation from vacancy and recoil atom distributions.

  4. Effect upon the Sputtering Threshold Due to Accumulation of Projectiles in Target Material

    NASA Astrophysics Data System (ADS)

    Kenmotsu, Takahiro; Wada, Motoi; Hyakutake, Toru; Nishiyama, Masaki; Muramoto, Tetsuya; Nishida, Michio

    In order to quantify the accumulation effect of projectiles in target material for sputtering, sputtering yields of carbon for pure graphite and the projectile retaining carbon target material bombarded by xenon and helium ions are calculated with a Monte Carlo code ACAT. The ACAT results have indicated that the threshold energy for sputtering is reduced due to the accumulation of the xenon atoms in graphite. Meanwhile, the threshold energy for carbon sputtering is not largely influenced by the retained helium atoms in graphite. Mass ratio of the projectile to the target atom is the important factor for the low energy sputtering yield. An empirical formula for sputtering yields for graphite retaining xenon atoms has been proposed.

  5. Effect of deuterium retention upon sputtering yield of tungsten by deuterons

    NASA Astrophysics Data System (ADS)

    Kenmotsu, T.; Ono, T.; Wada, M.

    2011-08-01

    Sputtering yields of tungsten from tungsten containing deuterium (D2) and tungsten containing carbon (C) atoms bombarded by deuterium and carbon atoms are calculated with a Monte Carlo code ACAT. The ACAT results have shown that the tungsten sputtering yields are changed by carbon retention in tungsten. The tungsten sputtering yield by deuterium bombardment around the sputtering threshold for pure tungsten have been enlarged by two mechanisms; one is the reduction in sputtering threshold due to smaller surface binding energy, the other is the enhanced development of collision cascade. As the carbon bombarding energy exceeds 200-300 eV, the sputtering yields for tungsten retaining deuterium and carbon become smaller due to the reduction in density of tungsten target atoms.

  6. AFM characterization of nonwoven material functionalized by ZnO sputter coating

    SciTech Connect

    Deng Bingyao; Yan Xiong; Wei Qufu Gao Weidong

    2007-10-15

    Sputter coatings provide new approaches to the surface functionalization of textile materials. In this study, polyethylene terephthalate (PET) nonwoven material was used as a substrate for creating functional nanostructures on the fiber surfaces. A magnetron sputter coating was used to deposit functional zinc oxide (ZnO) nanostructures onto the nonwoven substrate. The evolution of the surface morphology of the fibers in the nonwoven web was examined using atomic force microscopy (AFM). The AFM observations revealed a significant difference in the morphology of the fibers before and after the sputter coating. The AFM images also indicated the effect of the sputtering conditions on the surface morphology of the fibers. The increase in the sputtering time led to the growth of the ZnO grains on the fiber surfaces. The higher pressure in the sputtering chamber could cause the formation of larger grains on the fiber surfaces. The higher power used also generated larger grains on the fiber surfaces.

  7. Sputtering and secondary ion emission properties of alkali metal films and adsorbed monolayers

    SciTech Connect

    Krauss, A R; Gruen, D M

    1980-01-01

    The secondary ion emission of alkali metal adsorbed monlayer and multilayer films has been studied. Profiling with sub-monolayer resolution has been performed by Auger, x-ray photoemission and secondary ion mass spectroscopy. Characteristic differences in the sputtering yields, and ion fraction have been observed which are associated with both the surface bonding properties and the mechanism leading to the formation of secondary ions. By sputtering with a negative bias applied to the sample, positive secondary ions are returned to the surface, resulting in a reduced sputter-induced erosion rate. Comparison with the results obtained with K and Li overlayers sputtered without sample bias provides an experimental value of both the total and secondary ion sputtering yields. The first and second monolayers can be readily identified and the first monolayer exhibits a lower sputtering yield and higher secondary ion fraction. This result is related to adsorption theory and measured values are compared with those obtained by thermal desorption measurements.

  8. Effect of sputtering power on the magnetic properties of amorphous perpendicular TbFeCo films

    NASA Astrophysics Data System (ADS)

    Wang, Ke; Huang, Ya; Xu, Zhan; Dong, Shuo; Chen, Ruofei

    2017-02-01

    A series of amorphous perpendicular TbFeCo films are sputtered using a composite target. The magnetic properties of the TbFeCo films are found to strongly be influenced by sputtering power. The above-RT magnetic compensation point in the films sputtered at high powers is revealed by thermomagnetic measurements. With increasing the power the compensation point shifts considerably towards higher temperature, while only a slight reduction in the Curie temperature occurs. The coercivity is found to initially increase with the power and then falls, which is in accordance with film composition moving from FeCo-rich to Tb-rich side. This can be well explained by the sputtering yield of Tb, which increases faster than FeCo atoms with the power during the sputtering. Our results show a convenient way to adjust the coercivity of the films by modifying the Tb-to-FeCo ratio using the sputtering power.

  9. Sputtering of Lunar Regolith Simulant by Protons and Multicharged Heavy Ions at Solar Wind Energies

    SciTech Connect

    Meyer, Fred W; Harris, Peter R; Taylor, C. N.; Meyer III, Harry M; Barghouty, N.; Adams Jr., J.

    2011-01-01

    We report preliminary results on sputtering of a lunar regolith simulant at room temperature by singly and multiply charged solar wind ions using quadrupole and time-of-flight (TOF) mass spectrometry approaches. Sputtering of the lunar regolith by solar-wind heavy ions may be an important particle source that contributes to the composition of the lunar exosphere, and is a possible mechanism for lunar surface ageing and compositional modification. The measurements were performed in order to assess the relative sputtering efficiency of protons, which are the dominant constituent of the solar wind, and less abundant heavier multicharged solar wind constituents, which have higher physical sputtering yields than same-velocity protons, and whose sputtering yields may be further enhanced due to potential sputtering. Two different target preparation approaches using JSC-1A AGGL lunar regolith simulant are described and compared using SEM and XPS surface analysis.

  10. Molecular dynamics study on low-energy sputtering of carbon material by Xe ion bombardment

    NASA Astrophysics Data System (ADS)

    Muramoto, T.; Hyakutake, T.

    2013-05-01

    The low-energy sputtering of carbon material under Xe ion bombardment is studied through the molecular dynamics (MD) simulation. For the normal incidence of Xe, the MD result of sputtering yield almost agrees with the experimental result by Williams et al. (AIAA-2004-3788). However, the experimental result shows a less incident angle dependence than the MD result because the experiment performed on a rough surface. It is found that the sputtered particles have memory of the projectile because the sputtered particles by the low-energy projectile undergo only a few collisions before the ejection. Low density of an amorphous carbon surface brings the decrease of the sputtering yield and the increase of high-energy sputtered atoms.

  11. Modeling Solar-Wind Heavy-Ions' Potential Sputtering of Lunar KREEP Surface

    NASA Technical Reports Server (NTRS)

    Barghouty, A. F.; Meyer, F. W.; Harris, R. P.; Adams, J. H., Jr.

    2012-01-01

    Recent laboratory data suggest that potential sputtering may be an important weathering mechanism that can affect the composition of both the lunar surface and its tenuous exosphere; its role and implications, however, remain unclear. Using a relatively simple kinetic model, we will demonstrate that solar-wind heavy ions induced sputtering of KREEP surfaces is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We will also also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

  12. Channelized-Coplanar-Waveguide PIN-Diode Switches

    NASA Technical Reports Server (NTRS)

    Ponchak, G. E.; Simons, R. N.

    1992-01-01

    Three positive/intrinsic/negative (PIN-diode) reflective CPW (coplanar waveguide) switches demonstrated. First includes series-mounted diode to bridge gap in center strip conductor of CPW. Second includes pair of diodes to short center strip conductor to ground planes. Third includes diode to switch between band-pass filter and notch filter. Isolation exceeds 20 dB, while insertion loss is less than 1 dB.

  13. Semiconductor diode characterization for total skin electron irradiation.

    PubMed

    Madrid González, O A; Rivera Montalvo, T

    2014-01-01

    In this paper, a semiconductor diode characterization was performed. The diode characterization was completed using an electron beam with 4 MeV of energy. The semiconductor diode calibration used irradiation with an electron beam in an ion chamber. "In vivo" dosimetry was also conducted. The dosimetry results revealed that the semiconductor diode was a good candidate for use in the total skin electron therapy (TSET) treatment control.

  14. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G. Ronald; Hohimer, John P.; Owyoung, Adelbert

    1991-01-01

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.

  15. Diode amplifier of modulated optical beam power

    SciTech Connect

    D'yachkov, N V; Bogatov, A P; Gushchik, T I; Drakin, A E

    2014-11-30

    Analytical relations are obtained between characteristics of modulated light at the output and input of an optical diode power amplifier operating in the highly saturated gain regime. It is shown that a diode amplifier may act as an amplitude-to-phase modulation converter with a rather large bandwidth (∼10 GHz). The low sensitivity of the output power of the amplifier to the input beam power and its high energy efficiency allow it to be used as a building block of a high-power multielement laser system with coherent summation of a large number of optical beams. (lasers)

  16. Calculations of Second Breakdown in Silicon Diodes

    DTIC Science & Technology

    1982-08-01

    Diodes Area I ’ x 10-4 cm 2 *****~*... ... *.*. 35 "Mai" 1. INTRODUCTION The phenomenon of second breakdown was first reported in diodes by Tauc ...written for study of electrical breakdown in gases, 8 modified for study of 1 J. Tauc and A . Abraham, Thermal Breakdown in Silicon P-N Junctions...this plot was chosen to be the first time that VB, (80 V) was attained. Both figures 13 and 14 110 , 0 loI --- - - 1 0 100 10 1 ,0 Figure 13. Dynamic

  17. Computer processing of tunable diode laser spectra

    NASA Technical Reports Server (NTRS)

    May, Randy D.

    1989-01-01

    A computer-controlled tunable diode laser spectrometer and spectral analysis software are described. The three-channel system records simultaneously the transmission of a subject gas, a temperature-stabilized etalon, and a calibration gas. The software routines are applied to diode laser spectra of HNO3 and NO2 to illustrate the procedures adopted for conversion of raw spectral data to useful transmission and harmonic spectra. Extraction of line positions, absorption intensities, collisional broadening coefficients, and gas concentrations from recorded spectra is also described.

  18. Integrated injection-locked semiconductor diode laser

    DOEpatents

    Hadley, G.R.; Hohimer, J.P.; Owyoung, A.

    1991-02-19

    A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet. 18 figures.

  19. Phase-change radiative thermal diode

    SciTech Connect

    Ben-Abdallah, Philippe; Biehs, Svend-Age

    2013-11-04

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important applications in the development of future contactless thermal circuits or in the conception of radiative coatings for thermal management.

  20. An all-silicon passive optical diode.

    PubMed

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.