Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

The endpoint detection technique for deep submicrometer plasma etching

NASA Astrophysics Data System (ADS)

Wang, Wei; Du, Zhi-yun; Zeng, Yong; Lan, Zhong-went

2009-07-01

The availability of reliable optical sensor technology provides opportunities to better characterize and control plasma etching processes in real time, they could play a important role in endpoint detection, fault diagnostics and processes feedback control and so on. The optical emission spectroscopy (OES) method becomes deficient in the case of deep submicrometer gate etching. In the newly developed high density inductively coupled plasma (HD-ICP) etching system, Interferometry endpoint (IEP) is introduced to get the EPD. The IEP fringe count algorithm is investigated to predict the end point, and then its signal is used to control etching rate and to call end point with OES signal in over etching (OE) processes step. The experiment results show that IEP together with OES provide extra process control margin for advanced device with thinner gate oxide.

Deep Etching Process Developed for the Fabrication of Silicon Carbide Microsystems

NASA Technical Reports Server (NTRS)

Beheim, Glenn M.

2000-01-01

Silicon carbide (SiC), because of its superior electrical and mechanical properties at elevated temperatures, is a nearly ideal material for the microminiature sensors and actuators that are used in harsh environments where temperatures may reach 600 C or greater. Deep etching using plasma methods is one of the key processes used to fabricate silicon microsystems for more benign environments, but SiC has proven to be a more difficult material to etch, and etch depths in SiC have been limited to several micrometers. Recently, the Sensors and Electronics Technology Branch at the NASA Glenn Research Center at Lewis Field developed a plasma etching process that was shown to be capable of etching SiC to a depth of 60 mm. Deep etching of SiC is achieved by inductive coupling of radiofrequency electrical energy to a sulfur hexafluoride (SF6) plasma to direct a high flux of energetic ions and reactive fluorine atoms to the SiC surface. The plasma etch is performed at a low pressure, 5 mtorr, which together with a high gas throughput, provides for rapid removal of the gaseous etch products. The lateral topology of the SiC microstructure is defined by a thin film of etch-resistant material, such as indium-tin-oxide, which is patterned using conventional photolithographic processes. Ions from the plasma bombard the exposed SiC surfaces and supply the energy needed to initiate a reaction between SiC and atomic fluorine. In the absence of ion bombardment, no reaction occurs, so surfaces perpendicular to the wafer surface (the etch sidewalls) are etched slowly, yielding the desired vertical sidewalls.

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Iwase, Taku; Yokogawa, Kenetsu; Mori, Masahito

2018-06-01

The reaction mechanism during etching to fabricate deep holes in SiN/SiO2 stacks by using a HBr/N2/fluorocarbon-based gas plasma was investigated. To etch SiN and SiO2 films simultaneously, HBr/fluorocarbon gas mixture ratio was controlled to achieve etching selectivity closest to one. Deep holes were formed in the SiN/SiO2 stacks by one-step etching at several temperatures. The surface composition of the cross section of the holes was analyzed by time-of-flight secondary-ion mass spectrometry. It was found that bromine ions (considered to be derived from NH4Br) were detected throughout the holes in the case of low-temperature etching. It was also found that the dependence of hole depth on aspect ratio decreases as temperature decreases, and it becomes significantly weaker at a substrate temperature of 20 °C. It is therefore concluded that the formation of NH4Br supplies the SiN/SiO2 etchant to the bottom of the holes. Such a finding will make it possible to alleviate the decrease in etching rate due to a high aspect ratio.

Cryogenically cooled low-noise amplifier for radio-astronomical observations and centimeter-wave deep-space communications systems

NASA Astrophysics Data System (ADS)

Vdovin, V. F.; Grachev, V. G.; Dryagin, S. Yu.; Eliseev, A. I.; Kamaletdinov, R. K.; Korotaev, D. V.; Lesnov, I. V.; Mansfeld, M. A.; Pevzner, E. L.; Perminov, V. G.; Pilipenko, A. M.; Sapozhnikov, B. D.; Saurin, V. P.

2016-01-01

We report a design solution for a highly reliable, low-noise and extremely efficient cryogenically cooled transmit/receive unit for a large antenna system meant for radio-astronomical observations and deep-space communications in the X band. We describe our design solution and the results of a series of laboratory and antenna tests carried out in order to investigate the properties of the cryogenically cooled low-noise amplifier developed. The transmit/receive unit designed for deep-space communications (Mars missions, radio observatories located at Lagrangian point L2, etc.) was used in practice for communication with live satellites including "Radioastron" observatory, which moves in a highly elliptical orbit.

Development Status of the CECE Cryogenic Deep Throttling Demonstrator Engine

NASA Technical Reports Server (NTRS)

2008-01-01

As one of the first technology development programs awarded by NASA under the U.S. Space Exploration Policy (USSEP), the Pratt & Whitney Rocketdyne (PWR) Deep Throttling, Common Extensible Cryogenic Engine (CECE) program was selected by NASA in November 2004 to begin technology development and demonstration toward a deep throttling, cryogenic engine supporting ongoing trade studies for NASA's Lunar Lander descent stage. The CECE program leverages the maturity and previous investment of a flight-proven hydrogen/oxygen expander cycle engine, the PWR RLI0, to develop and demonstrate an unprecedented combination of reliability, safety, durability, throttlability, and restart capabilities in a high-energy, cryogenic engine. The testbed selected for the deep throttling demonstration phases of this program was a minimally modified RL10 engine, allowing for maximum current production engine commonality and extensibility with minimum program cost. Two series of demonstrator engine tests, the first in April-May 2006 and the second in March-April 2007, have demonstrated in excess of 10:1 throttling of the hydrogen/oxygen expander cycle engine. Both test series have explored a combustion instability ("chug") environment at low throttled power levels. These tests have provided an early demonstration of an enabling cryogenic propulsion concept with invaluable system-level technology data acquisition toward design and development risk mitigation for future CECE Demonstrator engine tests.

The effect of SF6 addition in a Cl2/Ar inductively coupled plasma for deep titanium etching

NASA Astrophysics Data System (ADS)

Laudrel, E.; Tillocher, T.; Meric, Y.; Lefaucheux, P.; Boutaud, B.; Dussart, R.

2018-05-01

Titanium is a material of interest for the biomedical field and more particularly for body implantable devices. Titanium deep etching by plasma was carried out in an inductively coupled plasma with a chlorine-based chemistry for the fabrication of titanium-based microdevices. Bulk titanium etch rate was first studied in Cl2/Ar plasma mixture versus the source power and the self-bias voltage. The plasma was characterized by Langmuir probe and by optical emission spectroscopy. The addition of SF6 in the plasma mixture was investigated. Titanium etch rate was optimized and reached a value of 2.4 µm · min-1. The nickel hard mask selectivity was also enhanced. The etched titanium surface roughness was reduced significantly.

Silicon macroporous arrays with high aspect ratio prepared by ICP etching

NASA Astrophysics Data System (ADS)

Wang, Guozheng; Yang, Bingchen; Wang, Ji; Yang, Jikai; Duanmu, Qingduo

2018-02-01

This paper reports on a macroporous silicon arrays with high aspect ratio, the pores of which are of 162, 205, 252, 276μm depths with 6, 10, 15 and 20 μm diameters respectively, prepared by Multiplex Inductively Coupled Plasma (ICP) etching. It was shown that there are very differences in process of high aspect ratio microstructures between the deep pores, a closed structure, and deep trenches, a open structure. The morphology and the aspect ratio dependent etching were analyzed and discussed. The macroporous silicon etched by ICP process yield an uneven, re-entrant, notched and ripples surface within the pores. The main factors effecting on the RIE lag of HARP etching are the passivation cycle time, the pressure of reactive chamber, and the platen power of ICP system.

Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices.

PubMed

Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna

2016-04-27

Silicon nanowires (Si NWs) are widely investigated nowadays for implementation in advanced energy conversion and storage devices, as well as many other possible applications. Black silicon (BSi)-NWs are dry etched NWs that merge the advantages related to low-dimensionality with the special industrial appeal connected to deep reactive ion etching (RIE). In fact, RIE is a well established technique in microelectronics manufacturing. However, RIE processing could affect the electrical properties of BSi-NWs by introducing deep states into their forbidden gap. This work applies deep level transient spectroscopy (DLTS) to identify electrically active deep levels and the associated defects in dry etched Si NW arrays. Besides, the successful fitting of DLTS spectra of BSi-NWs-based Schottky barrier diodes is an experimental confirmation that the same theoretical framework of dynamic electronic behavior of deep levels applies in bulk as well as in low dimensional structures like NWs, when quantum confinement conditions do not occur. This has been validated for deep levels associated with simple pointlike defects as well as for deep levels associated with defects with richer structures, whose dynamic electronic behavior implies a more complex picture.

Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabrication

NASA Astrophysics Data System (ADS)

Zhao, Yiping; Jansen, Henri; de Boer, Meint; Berenschot, Erwin; Bouwes, Dominique; Gironès, Miriam; Huskens, Jurriaan; Tas, Niels

2010-09-01

Edge lithography in combination with fluorine-based plasma etching is employed to avoid the dependence on crystal orientation in single crystal silicon to create monolithic nanoridges with arbitrary contours. This is demonstrated by using a mask with circular structures and Si etching at cryogenic temperature with SF6+O2 plasma mixtures. Initially, the explored etch recipe was used with Cr as the masking material. Although nanoridges with perfect vertical sidewalls have been achieved, Cr causes severe sidewall roughness due to line edge roughness. Therefore, an SU-8 polymer is used instead. Although the SU-8 pattern definition needs further improvement, we demonstrate the possibility of fabricating Si nanoridges of arbitrary contours providing a width below 50 nm and a height between 25 and 500 nm with smooth surface finish. Artifacts in the ridge profile are observed and are mainly caused by the bird's beak phenomenon which is characteristic for the used LOCOS process.

Fast and low power Michelson interferometer thermo-optical switch on SOI.

PubMed

Song, Junfeng; Fang, Q; Tao, S H; Liow, T Y; Yu, M B; Lo, G Q; Kwong, D L

2008-09-29

We designed and fabricated silicon-on-insulator based Michelson interferometer (MI) thermo-optical switches with deep etched trenches for heat-isolation. Switch power was reduced approximately 20% for the switch with deep etched trenches, and the MI saved approximately 50% power than that of the Mach-Zehnder interferometer. 10.6 mW switch power, approximately 42 micros switch time for the MI with deep trenches, 13.14 mW switch power and approximately 34 micros switch time for the MI without deep trenches were achieved.

Sputtered gold mask for deep chemical etching of silicon

NASA Technical Reports Server (NTRS)

Pisciotta, B. P.; Gross, C.; Olive, R. S.

1975-01-01

Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.

PubMed

Ghoneim, Mohamed Tarek; Hussain, Muhammad Mustafa

2017-04-01

A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of cryogenic treatment on microstructure, mechanical and wear behaviors of AISI H13 hot work tool steel

NASA Astrophysics Data System (ADS)

Koneshlou, Mahdi; Meshinchi Asl, Kaveh; Khomamizadeh, Farzad

2011-01-01

This paper focuses on the effects of low temperature (subzero) treatments on microstructure and mechanical properties of H13 hot work tool steel. Cryogenic treatment at -72 °C and deep cryogenic treatment at -196 °C were applied and it was found that by applying the subzero treatments, the retained austenite was transformed to martensite. As the temperature was decreased more retained austenite was transformed to martensite and it also led to smaller and more uniform martensite laths distributed in the microstructure. The deep cryogenic treatment also resulted in precipitation of more uniform and very fine carbide particles. The microstructural modification resulted in a significant improvement on the mechanical properties of the H13 tool steel.

CECE: A Deep Throttling Demonstrator Cryogenic Engine for NASA's Lunar Lander

NASA Technical Reports Server (NTRS)

Giuliano, Victor J.; Leonard, Timothy G.; Adamski, Walter M.; Kim, Tony S.

2007-01-01

As one of the first technology development programs awarded under NASA's Vision for Space Exploration, the Pratt & Whitney Rocketdyne (PWR) Deep Throttling, Common Extensible Cryogenic Engine (CECE) program was selected by NASA in November 2004 to begin technology development and demonstration toward a deep throttling, cryogenic Lunar Lander engine for use across multiple human and robotic lunar exploration mission segments with extensibility to Mars. The CECE program leverages the maturity and previous investment of a flight-proven hydrogen/oxygen expander cycle engine, the RL10, to develop and demonstrate an unprecedented combination of reliability, safety, durability, throttlability, and restart capabilities in a high-energy, cryogenic engine. NASA Marshall Space Flight Center and NASA Glenn Research Center personnel were integral design and analysis team members throughout the requirements assessment, propellant studies and the deep throttling demonstrator elements of the program. The testbed selected for the initial deep throttling demonstration phase of this program was a minimally modified RL10 engine, allowing for maximum current production engine commonality and extensibility with minimum program cost. In just nine months from technical program start, CECE Demonstrator No. 1 engine testing in April/May 2006 at PWR's E06 test stand successfully demonstrated in excess of 10:1 throttling of the hydrogen/oxygen expander cycle engine. This test provided an early demonstration of a viable, enabling cryogenic propulsion concept with invaluable system-level technology data acquisition toward design and development risk mitigation for both the subsequent CECE Demonstrator No. 2 program and to the future Lunar Lander Design, Development, Test and Evaluation effort.

Nanotribological behavior of deep cryogenically treated martensitic stainless steel

PubMed Central

Bakoglidis, Konstantinos D; Tuckart, Walter R; Broitman, Esteban

2017-01-01

Cryogenic treatments are increasingly used to improve the wear resistance of various steel alloys by means of transformation of retained austenite, deformation of virgin martensite and carbide refinement. In this work the nanotribological behavior and mechanical properties at the nano-scale of cryogenically and conventionally treated AISI 420 martensitic stainless steel were evaluated. Conventionally treated specimens were subjected to quenching and annealing, while the deep cryogenically treated samples were quenched, soaked in liquid nitrogen for 2 h and annealed. The elastic–plastic parameters of the materials were assessed by nanoindentation tests under displacement control, while the friction behavior and wear rate were evaluated by a nanoscratch testing methodology that it is used for the first time in steels. It was found that cryogenic treatments increased both hardness and elastic limit of a low-carbon martensitic stainless steel, while its tribological performance was enhanced marginally. PMID:28904837

Nanotribological behavior of deep cryogenically treated martensitic stainless steel.

PubMed

Prieto, Germán; Bakoglidis, Konstantinos D; Tuckart, Walter R; Broitman, Esteban

2017-01-01

Cryogenic treatments are increasingly used to improve the wear resistance of various steel alloys by means of transformation of retained austenite, deformation of virgin martensite and carbide refinement. In this work the nanotribological behavior and mechanical properties at the nano-scale of cryogenically and conventionally treated AISI 420 martensitic stainless steel were evaluated. Conventionally treated specimens were subjected to quenching and annealing, while the deep cryogenically treated samples were quenched, soaked in liquid nitrogen for 2 h and annealed. The elastic-plastic parameters of the materials were assessed by nanoindentation tests under displacement control, while the friction behavior and wear rate were evaluated by a nanoscratch testing methodology that it is used for the first time in steels. It was found that cryogenic treatments increased both hardness and elastic limit of a low-carbon martensitic stainless steel, while its tribological performance was enhanced marginally.

Development of scanning graphene Hall probes for magnetic microscopy

NASA Astrophysics Data System (ADS)

Schaefer, Brian T.; Wang, Lei; McEuen, Paul L.; Nowack, Katja C.

We discuss our progress on developing scanning Hall probes fabricated from hexagonal boron nitride (hBN)-encapsulated graphene, with the goal to image magnetic fields with submicron resolution. In contrast to scanning superconducting quantum interference device (SQUID) microscopy, this technique is compatible with a large applied magnetic field and not limited to cryogenic temperatures. The field sensitivity of a Hall probe depends inversely on carrier density, while the primary source of noise in the measurement is Johnson noise originating from the device resistance. hBN-encapsulated graphene demonstrates high carrier mobility at low carrier densities, therefore making it an ideal material for sensitive Hall probes. Furthermore, engineering the dielectric environment of graphene by encapsulating in hBN reduces low-frequency charge noise and disorder from the substrate. We outline our plans for adapting these devices for scanning, including characterization of the point spread function with a scanned current loop and fabrication of a deep-etched structure that enables positioning the sensitive area within 100 nanometers of the sample surface.

Scalloping minimization in deep Si etching on Unaxis DSE tools

NASA Astrophysics Data System (ADS)

Lai, Shouliang; Johnson, Dave J.; Westerman, Russ J.; Nolan, John J.; Purser, David; Devre, Mike

2003-01-01

Sidewall smoothness is often a critical requirement for many MEMS devices, such as microfludic devices, chemical, biological and optical transducers, while fast silicon etch rate is another. For such applications, the time division multiplex (TDM) etch processes, so-called "Bosch" processes are widely employed. However, in the conventional TDM processes, rough sidewalls result due to scallop formation. To date, the amplitude of the scalloping has been directly linked to the silicon etch rate. At Unaxis USA Inc., we have developed a proprietary fast gas switching technique that is effective for scalloping minimization in deep silicon etching processes. In this technique, process cycle times can be reduced from several seconds to as little as a fraction of second. Scallop amplitudes can be reduced with shorter process cycles. More importantly, as the scallop amplitude is progressively reduced, the silicon etch rate can be maintained relatively constant at high values. An optimized experiment has shown that at etch rate in excess of 7 μm/min, scallops with length of 116 nm and depth of 35 nm were obtained. The fast gas switching approach offers an ideal manufacturing solution for MEMS applications where extremely smooth sidewall and fast etch rate are crucial.

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

NASA Astrophysics Data System (ADS)

Yeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I.

2015-08-01

In this paper, based on the anisotropic nature of hydrogen (H2) etching on GaN, we describe a new approach to the removal of threading dislocations in GaN layers. The top surfaces of c-plane (Ga-face) and a-plane GaNs are considered stable in H2; therefore, H2 etches only crystal imperfections such as dislocation and basal plane stacking fault (BSF) sites. We used H2 to etch undoped c-plane GaN, n-type c-plane GaN, a-plane GaN, and an InGaN/GaN multiple quantum well structure. Several examinations were performed, indicating deep cavities on the c-plane GaN samples after H2 etching; furthermore, gorge-like grooves were observed on the a-plane GaN samples. The deep cavities on the c-plane GaN were considered the etched dislocation sites, and the gorge-like grooves on the a-plane GaN were considered the etched BSF sites. Photoluminescence measurements were performed and the results indicated that the H2-etched samples demonstrate superior optoelectronic properties, probably because of the elimination of dislocations.

MITLL Silicon Integrated Photonics Process: Design Guide

DTIC Science & Technology

2015-07-31

Silicon Integrated Photonics Process Comprehensive Design Guide 16  Deep Etch for Fiber Coupling (DEEP_ETCH...facets for fiber coupling. Standard design layers for each process are defined in Section 3, but other options can be made available. Notes on...a silicon thinning process that can create very low loss waveguides (and which better suppresses back scatter and, therefore, resonance splitting in

Cutoff-mesa isolated rib optical waveguide for III-V heterostructure photonic integrated circuits

DOEpatents

Vawter, Gregory A.; Smith, Robert E.

1998-01-01

A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides.

Cutoff-mesa isolated rib optical waveguide for III-V heterostructure photonic integrated circuits

DOEpatents

Vawter, G.A.; Smith, R.E.

1998-04-28

A cutoff mesa rib waveguide provides single-mode performance regardless of any deep etches that might be used for electrical isolation between integrated electrooptic devices. Utilizing a principle of a cutoff slab waveguide with an asymmetrical refractive index profile, single mode operation is achievable with a wide range of rib widths and does not require demanding etch depth tolerances. This new waveguide design eliminates reflection effects, or self-interference, commonly seen when conventional rib waveguides are combined with deep isolation etches and thereby reduces high order mode propagation and crosstalk compared to the conventional rib waveguides. 7 figs.

Isotropically etched radial micropore for cell concentration, immobilization, and picodroplet generation.

PubMed

Perroud, Thomas D; Meagher, Robert J; Kanouff, Michael P; Renzi, Ronald F; Wu, Meiye; Singh, Anup K; Patel, Kamlesh D

2009-02-21

To enable several on-chip cell handling operations in a fused-silica substrate, small shallow micropores are radially embedded in larger deeper microchannels using an adaptation of single-level isotropic wet etching. By varying the distance between features on the photolithographic mask (mask distance), we can precisely control the overlap between two etch fronts and create a zero-thickness semi-elliptical micropore (e.g. 20 microm wide, 6 microm deep). Geometrical models derived from a hemispherical etch front show that micropore width and depth can be expressed as a function of mask distance and etch depth. These models are experimentally validated at different etch depths (25.03 and 29.78 microm) and for different configurations (point-to-point and point-to-edge). Good reproducibility confirms the validity of this approach to fabricate micropores with a desired size. To illustrate the wide range of cell handling operations enabled by micropores, we present three on-chip functionalities: continuous-flow particle concentration, immobilization of single cells, and picoliter droplet generation. (1) Using pressure differentials, particles are concentrated by removing the carrier fluid successively through a series of 44 shunts terminated by 31 microm wide, 5 microm deep micropores. Theoretical values for the concentration factor determined by a flow circuit model in conjunction with finite volume modeling are experimentally validated. (2) Flowing macrophages are individually trapped in 20 microm wide, 6 microm deep micropores by hydrodynamic confinement. The translocation of transcription factor NF-kappaB into the nucleus upon lipopolysaccharide stimulation is imaged by fluorescence microscopy. (3) Picoliter-sized droplets are generated at a 20 microm wide, 7 microm deep micropore T-junction in an oil stream for the encapsulation of individual E. coli bacteria cells.

Cryogenic plasma-processed silicon microspikes as a high-performance anode material for lithium ion-batteries

NASA Astrophysics Data System (ADS)

Sakai, Joe; Luais, Erwann; Wolfman, Jérôme; Tillocher, Thomas; Dussart, Rémi; Tran-Van, Francois; Ghamouss, Fouad

2017-10-01

Micro- or nano-structuring is essential in order to use Si as an anode material for lithium ion batteries. In the present study, we attempted to use Si wafers with a spiky microstructure (SMS), the so-called black-Si, prepared by a cryogenic reactive ion etching process with an SF6/O2 gas mixture, for Li half-cells. The SMS with various sizes of spikes from 2.0 μm (height) × 0.2 μm (width) to 21 μm × 1.0 μm was etched by varying the SF6/O2 gas flow ratio. An anode of SMS of 11 μm-height in average showed stable charge/discharge capacity and Coulombic efficiency higher than 99% for more than 300 cycles, causing no destruction to any part of the Si wafer. The spiky structure turned columnar after cycles, suggesting graded lithiation levels along the length. The present results suggest a strategy to utilize a wafer-based Si material for an anode of a lithium ion battery durable against repetitive lithiation/delithiation cycles.

Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

NASA Technical Reports Server (NTRS)

Bautista, J. J.

1993-01-01

The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers. In order to address future spacecraft navigation, telemetry, radar, and radio science needs, the Deep Space Network is investing both maser and HEMT amplifiers for its Ka-band (32-GHz) downlink capability. This article describes the current state cryogenic HEMT LNA development at Ka-band for the DSN. Noise performance results at S-band (2.3 GHz) and X-band (8.5 GHz) for HEMT's and masers are included for completeness.

New Deep Reactive Ion Etching Process Developed for the Microfabrication of Silicon Carbide

NASA Technical Reports Server (NTRS)

Evans, Laura J.; Beheim, Glenn M.

2005-01-01

Silicon carbide (SiC) is a promising material for harsh environment sensors and electronics because it can enable such devices to withstand high temperatures and corrosive environments. Microfabrication techniques have been studied extensively in an effort to obtain the same flexibility of machining SiC that is possible for the fabrication of silicon devices. Bulk micromachining using deep reactive ion etching (DRIE) is attractive because it allows the fabrication of microstructures with high aspect ratios (etch depth divided by lateral feature size) in single-crystal or polycrystalline wafers. Previously, the Sensors and Electronics Branch of the NASA Glenn Research Center developed a DRIE process for SiC using the etchant gases sulfur hexafluoride (SF6) and argon (Ar). This process provides an adequate etch rate of 0.2 m/min and yields a smooth surface at the etch bottom. However, the etch sidewalls are rougher than desired, as shown in the preceding photomicrograph. Furthermore, the resulting structures have sides that slope inwards, rather than being precisely vertical. A new DRIE process for SiC was developed at Glenn that produces smooth, vertical sidewalls, while maintaining an adequately high etch rate.

Effects of Deep Cryogenic Treatment on the Wear Resistance and Mechanical Properties of AISI H13 Hot-Work Tool Steel

NASA Astrophysics Data System (ADS)

Çiçek, Adem; Kara, Fuat; Kıvak, Turgay; Ekici, Ergün; Uygur, İlyas

2015-11-01

In this study, a number of wear and tensile tests were performed to elucidate the effects of deep cryogenic treatment on the wear behavior and mechanical properties (hardness and tensile strength) of AISI H13 tool steel. In accordance with this purpose, three different heat treatments (conventional heat treatment (CHT), deep cryogenic treatment (DCT), and deep cryogenic treatment and tempering (DCTT)) were applied to tool steel samples. DCT and DCTT samples were held in nitrogen gas at -145 °C for 24 h. Wear tests were conducted on a dry pin-on-disk device using two loads of 60 and 80 N, two sliding velocities of 0.8 and 1 m/s, and a wear distance of 1000 m. All test results showed that DCT improved the adhesive wear resistance and mechanical properties of AISI H13 steel. The formation of small-sized and uniformly distributed carbide particles and the transformation of retained austenite to martensite played an important role in the improvements in the wear resistance and mechanical properties. After cleavage fracture, the surfaces of all samples were characterized by the cracking of primary carbides, while the DCT and DCTT samples displayed microvoid formation by decohesion of the fine carbides precipitated during the cryo-tempering process.

Simulation of MEMS for the Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Mott, Brent; Kuhn, Jonathan; Broduer, Steve (Technical Monitor)

2001-01-01

The NASA Goddard Space Flight Center (GSFC) is developing optical micro-electromechanical system (MEMS) components for potential application in Next Generation Space Telescope (NGST) science instruments. In this work, we present an overview of the electro-mechanical simulation of three MEMS components for NGST, which include a reflective micro-mirror array and transmissive microshutter array for aperture control for a near infrared (NIR) multi-object spectrometer and a large aperture MEMS Fabry-Perot tunable filter for a NIR wide field camera. In all cases the device must operate at cryogenic temperatures with low power consumption and low, complementary metal oxide semiconductor (CMOS) compatible, voltages. The goal of our simulation efforts is to adequately predict both the performance and the reliability of the devices during ground handling, launch, and operation to prevent failures late in the development process and during flight. This goal requires detailed modeling and validation of complex electro-thermal-mechanical interactions and very large non-linear deformations, often involving surface contact. Various parameters such as spatial dimensions and device response are often difficult to measure reliably at these small scales. In addition, these devices are fabricated from a wide variety of materials including surface micro-machined aluminum, reactive ion etched (RIE) silicon nitride, and deep reactive ion etched (DRIE) bulk single crystal silicon. The above broad set of conditions combine to be a formidable challenge for space flight qualification analysis. These simulations represent NASA/GSFC's first attempts at implementing a comprehensive strategy to address complex MEMS structures.

Application of Deep Cryogenic Treatment to Uncoated Tungsten Carbide Inserts in the Turning of AISI 304 Stainless Steel

NASA Astrophysics Data System (ADS)

Özbek, Nursel Altan; Çİçek, Adem; Gülesİn, Mahmut; Özbek, Onur

2016-12-01

This study investigated the effects of deep cryogenic treatment (DCT) on the wear performance of uncoated tungsten carbide inserts. AISI 304 austenitic stainless steel, widely used in industry, was selected as the workpiece material. Cutting experiments showed that the amount of wear significantly increased with increasing cutting speed. In addition, it was found that DCT contributed to the wear resistance of the turning inserts. The treated turning inserts were less worn by 48 and 38 pct in terms of crater wear and notch wear, respectively, whereas they exhibited up to 18 pct superior wear performance in terms of flank wear. This was attributed to the precipitation of new and finer η-carbides and their homogeneous distribution in the microstructure of the tungsten carbide material after deep cryogenic treatment. Analyses via image processing, hardness measurements, and SEM observations confirmed these findings.

3D memory: etch is the new litho

NASA Astrophysics Data System (ADS)

Petti, Christopher

2018-03-01

This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

Ion-beam-assisted etching of diamond

NASA Technical Reports Server (NTRS)

Efremow, N. N.; Geis, M. W.; Flanders, D. C.; Lincoln, G. A.; Economou, N. P.

1985-01-01

The high thermal conductivity, low RF loss, and inertness of diamond make it useful in traveling wave tubes operating in excess of 500 GHz. Such use requires the controlled etching of type IIA diamond to produce grating like structures tens of micrometers deep. Previous work on reactive ion etching with O2 gave etching rates on the order of 20 nm/min and poor etch selectivity between the masking material (Ni or Cr) and the diamond. An alternative approach which uses a Xe(+) beam and a reactive gas flux of NO2 in an ion-beam-assisted etching system is reported. An etching rate of 200 nm/min was obtained with an etching rate ratio of 20 between the diamond and an aluminum mask.

Etching and oxidation of InAs in planar inductively coupled plasma

NASA Astrophysics Data System (ADS)

Dultsev, F. N.; Kesler, V. G.

2009-10-01

The surface of InAs (1 1 1)A was investigated under plasmachemical etching in the gas mixture CH 4/H 2/Ar. Etching was performed using the RF (13.56 MHz) and ICP plasma with the power 30-150 and 50-300 W, respectively; gas pressure in the reactor was 3-10 mTorr. It was demonstrated that the composition of the subsurface layer less than 5 nm thick changes during plasmachemical etching. A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry providing the conservation of the surface relief is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates were selected.

Experimentation for the Maturation of Deep Space Cryogenic Refueling Technologies

NASA Technical Reports Server (NTRS)

Chato, David J.

2008-01-01

This report describes the results of the "Experimentation for the Maturation of Deep Space Cryogenic Refueling Technology" study. This study identifies cryogenic fluid management technologies that require low-gravity flight experiments bring technology readiness levels to 5 to 6; examines many possible flight experiment options; and develops near-term low-cost flight experiment concepts to mature the core technologies. A total of 25 white papers were prepared by members of the project team in the course of this study. The full text of each white paper is included and 89 relevant references are cited. The team reviewed the white papers that provided information on new or active concepts of experiments to pursue and assessed them on the basis of technical need, cost, return on investment, and flight platform. Based on on this assessment the "Centaur Test Bed for Cryogenic Fluid Management" was rated the highest. "Computational Opportunities for Cryogenics for Cryogenic and Low-g Fluid Systems" was ranked second, based on its high scores in state of the art and return on investment, even though scores in cost and time were second to last. "Flight Development Test Objective Approach for In-space Propulsion Elements" was ranked third.

Cryogenic Selective Surfaces

NASA Technical Reports Server (NTRS)

Youngquist, Robert C.; Nurge, Mark A.

2015-01-01

Under our NASA Innovative Advanced Concepts (NIAC) project we have theoretically demonstrated a novel selective surface that reflects roughly 100 times more solar radiation than any other known coating. If this prediction holds up under experimental tests it will allow cryogenic temperatures to be reached in deep space even in the presence of the sun. It may allow LOX to be carried to the Moon and Mars. It may allow superconductors to be used in deep space without a refrigeration system.

Microstructure and mechanical properties of AZ91 magnesium alloy subject to deep cryogenic treatments

NASA Astrophysics Data System (ADS)

Li, Gui-rong; Wang, Hong-ming; Cai, Yun; Zhao, Yu-tao; Wang, Jun-jie; Gill, Simon P. A.

2013-09-01

AZ91 magnesium alloy was subjected to a deep cryogenic treatment. X-ray diffraction (XRD), scanning electronic microscopy (SEM), and transmission electronic microscopy (TEM) methods were utilized to characterize the composition and microstructure of the treated samples. The results show that after two cryogenic treatments, the quantity of the precipitate hardening β phase increases, and the sizes of the precipitates are refined from 8-10 μm to 2-4 μm. This is expected to be due to the decreased solubility of aluminum in the matrix at low temperature and the significant plastic deformation owing to internal differences in thermal contraction between phases and grains. The polycrystalline matrix is also noticeably refined, with the sizes of the subsequent nanocrystalline grains in the range of 50-100 nm. High density dislocations are observed to pile up at the grain boundaries, inducing the dynamic recrystallization of the microstructure, leading to the generation of a nanocrystalline grain structure. After two deep cryogenic treatments, the tensile strength and elongation are found to be substantially increased, rising from 243 MPa and 4.4% of as-cast state to 299 MPa and 5.1%.

Infrared detectors and test technology of cryogenic camera

NASA Astrophysics Data System (ADS)

Yang, Xiaole; Liu, Xingxin; Xing, Mailing; Ling, Long

2016-10-01

Cryogenic camera which is widely used in deep space detection cools down optical system and support structure by cryogenic refrigeration technology, thereby improving the sensitivity. Discussing the characteristics and design points of infrared detector combined with camera's characteristics. At the same time, cryogenic background test systems of chip and detector assembly are established. Chip test system is based on variable cryogenic and multilayer Dewar, and assembly test system is based on target and background simulator in the thermal vacuum environment. The core of test is to establish cryogenic background. Non-uniformity, ratio of dead pixels and noise of test result are given finally. The establishment of test system supports for the design and calculation of infrared systems.

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

NASA Astrophysics Data System (ADS)

Gao, Haiyong; Lee, Jaesoong; Ni, Xianfeng; Leach, Jacob; Özgür, Ümit; Morkoç, Hadis

2011-02-01

The epitaxial lateral overgrowth (ELO) gallium nitride (GaN) was grown with high fill factor using metal organic chemical vapor deposition (MOCVD). The inductively coupled plasma (ICP) etching of ELO-GaN based on Cl2/Ar/SiCl4 gas mixture was performed. Surface properties of ELO-GaN subjected to ICP etching have been investigated and optimized etching condition in ELO-GaN with ICP etching is presented. Radiofrequency (RF) power and the flow rate of Cl2 gas were modified during the experiments. The window region, wing region and the edge region of ELO-GaN pattern present different etching characteristics. Different etching conditions were studied to get the minimized plasma-induced damage, relatively high etching rates, and excellent surface profiles. Etch depths of the etched ELO-GaN with smooth surface up to about 19 μm were achieved. The most suitable three-step etching condition is discussed with the assessment based on the morphology observation of the etched surface of ELO-GaN patterns.

Influence of deep cryogenic treatment on structure and wear resistance of materials of hydraulic breaker chisels

NASA Astrophysics Data System (ADS)

Bolobov, V. I.; BinhLe, Thanh

2018-03-01

It is shown that shallow cryogenic treatment at -75°C (SCT) of the materials of hydraulic breaker chisels - P20, 1080 and D2 steels leads to a decrease (44 ÷ 82%) in the amount of retained austenite and an increase (26 ÷ 99%) in the amount of carbides in the structure of hardened steel, which is accompanied by an increase in its hardness (1.4 ÷ 2.1%) and abrasive wear resistance (10 ÷ 31%) with a simultaneous decrease in impact toughness (19 ÷ 24%). Deep cryogenic treatment at -196°C (DCT) and subsequent low-temperature tempering of D2 steel leads to a significant increase in its wear resistance (98%) and impact toughness (32%).

Cryogenic Evaluation of an Advanced DC/DC Converter Module for Deep Space Applications

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Hammoud, Ahmad; Gerber, Scott S.; Patterson, Richard

2003-01-01

DC/DC converters are widely used in power management, conditioning, and control of space power systems. Deep space applications require electronics that withstand cryogenic temperature and meet a stringent radiation tolerance. In this work, the performance of an advanced, radiation-hardened (rad-hard) commercial DC/DC converter module was investigated at cryogenic temperatures. The converter was investigated in terms of its steady state and dynamic operations. The output voltage regulation, efficiency, terminal current ripple characteristics, and output voltage response to load changes were determined in the temperature range of 20 to -140 C. These parameters were obtained at various load levels and at different input voltages. The experimental procedures along with the results obtained on the investigated converter are presented and discussed.

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

NASA Astrophysics Data System (ADS)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2013-07-01

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

Shear Bond Strength of Superficial, Intermediate and Deep Dentin In Vitro with Recent Generation Self-etching Primers and Single Nano Composite Resin.

PubMed

Singh, Kulshrest; Naik, Rajaram; Hegde, Srinidhi; Damda, Aftab

2015-01-01

This in vitro study is intended to compare the shear bond strength of recent self-etching primers to superficial, intermediate, and deep dentin levels. All teeth were sectioned at various levels and grouped randomly into two experimental groups and two control groups having three subgroups. The experimental groups consisted of two different dentin bonding system. The positive control group consisted of All Bond 2 and the negative control group was without the bonding agent. Finally, the specimens were subjected to shear bond strength study under Instron machine. The maximum shear bond strengths were noted at the time of fracture. The results were statistically analyzed. Comparing the shear bond strength values, All Bond 2 (Group III) demonstrated fairly higher bond strength values at different levels of dentin. Generally comparing All Bond 2 with the other two experimental groups revealed highly significant statistical results. In the present investigation with the fourth generation, higher mean shear bond strength values were recorded compared with the self-etching primers. When intermediate dentin shear bond strength was compared with deep dentin shear bond strength statistically significant results were found with Clearfil Liner Bond 2V, All Bond 2 and the negative control. There was a statistically significant difference in shear bond strength values both with self-etching primers and control groups (fourth generation bonding system and without bonding system) at superficial, intermediate, and deep dentin. There was a significant fall in bond strength values as one reaches deeper levels of dentin from superficial to intermediate to deep.

Selective Processing Techniques for Electronics and Opto-Electronic Applications: Quantum-Well Devices and Integrated Optic Circuits

DTIC Science & Technology

1993-02-10

new technology is to have sufficient control of processing to *- describable by an appropriate elecromagnetic model . build useful devices. For example...3. W aveguide Modulators .................................. 7 B. Integrated Optical Device and Circuit Modeling ... ................... .. 10 C...following categories: A. Integrated Optical Devices and Technology B. Integrated Optical Device and Circuit Modeling C. Cryogenic Etching for Low

Validation and performance of the LHC cryogenic system through commissioning of the first sector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serio, L.; Bouillot, A.; Casas-Cubillos, J.

2007-12-01

The cryogenic system [1] for the Large Hadron Collider accelerator is presently in its final phase of commissioning at nominal operating conditions. The refrigeration capacity for the LHC is produced using eight large cryogenic plants and eight 1.8 K refrigeration units installed on five cryogenic islands. Machine cryogenic equipment is installed in a 26.7-km circumference ring deep underground tunnel and are maintained at their nominal operating conditions via a distribution system consisting of transfer lines, cold interconnection boxes at each cryogenic island and a cryogenic distribution line. The functional analysis of the whole system during all operating conditions was establishedmore » and validated during the first sector commissioning in order to maximize the system availability. Analysis, operating modes, main failure scenarios, results and performance of the cryogenic system are presented.« less

Effect of deep cryogenic treatment on the microstructure and wear performance of Cr-Mn-Cu white cast iron grinding media

NASA Astrophysics Data System (ADS)

Vidyarthi, M. K.; Ghose, A. K.; Chakrabarty, I.

2013-12-01

The phase transformation and grinding wear behavior of Cr-Mn-Cu white cast irons subjected to destabilization treatment followed by air cooling or deep cryogenic treatment were studied as a part of the development program of substitute alloys for existing costly wear resistant alloys. The microstructural evolution during heat treatment and the consequent improvement in grinding wear performance were evaluated with optical and scanning electron microscopy, X-ray diffraction analysis, bulk hardness, impact toughness and corrosion rate measurements, laboratory ball mill grinding wear test etc. The deep cryogenic treatment has a significant effect in minimizing the retained austenite content and converts it to martensite embedded with fine M7C3 alloy carbides. The cumulative wear losses in cryotreated alloys are lesser than those with conventionally destabilized alloys followed by air cooling both in wet and dry grinding conditions. The cryotreated Cr-Mn-Cu irons exhibit comparable wear performance to high chromium irons.

Cryogenic Fluid Management Technology Development for Nuclear Thermal Propulsion

NASA Technical Reports Server (NTRS)

Taylor, B. D.; Caffrey, J.; Hedayat, A.; Stephens, J.; Polsgrove, R.

2015-01-01

Cryogenic fluid management technology is critical to the success of future nuclear thermal propulsion powered vehicles and long duration missions. This paper discusses current capabilities in key technologies and their development path. The thermal environment, complicated from the radiation escaping a reactor of a nuclear thermal propulsion system, is examined and analysis presented. The technology development path required for maintaining cryogenic propellants in this environment is reviewed. This paper is intended to encourage and bring attention to the cryogenic fluid management technologies needed to enable nuclear thermal propulsion powered deep space missions.

Cryogenic Fluid Management Technology Development for Nuclear Thermal Propulsion

NASA Technical Reports Server (NTRS)

Taylor, Brian; Caffrey, Jarvis; Hedayat, Ali; Stephens, Jonathan; Polsgrove, Robert

2015-01-01

The purpose of this paper is to investigate, facilitate a discussion and determine a path forward for technology development of cryogenic fluid management technology that is necessary for long duration deep space missions utilizing nuclear thermal propulsion systems. There are a number of challenges in managing cryogenic liquids that must be addressed before long durations missions into deep space, such as a trip to Mars can be successful. The leakage rate of hydrogen from pressure vessels, seals, lines and valves is a critical factor that must be controlled and minimized. For long duration missions, hydrogen leakage amounts to large increases in hydrogen and therefore vehicle mass. The size of a deep space vehicle, such as a mars transfer vehicle, must be kept small to control cost and the logistics of a multi launch, assembled in orbit vehicle. The boil off control of the cryogenic fluid is an additional obstacle to long duration missions. The boil off caused by heat absorption results in the growth of the propellant needs of the vehicle and therefore vehicle mass. This is a significant problem for a vehicle using nuclear (fission) propulsion systems. Radiation from the engines deposits large quantities of heat into the cryogenic fluid, greatly increasing boil off beyond that caused by environmental heat leakage. Addressing and resolving these challenges is critical to successful long duration space exploration. This paper discusses the state of the technology needed to address these challenges and discuss the path forward needed in technology development.

Cold Helium Gas Pressurization For Spacecraft Cryogenic Propulsion Systems

NASA Technical Reports Server (NTRS)

Morehead, Robert L.; Atwell. Matthew J.; Hurlbert, Eric A.; Melcher, J. C.

2017-01-01

To reduce the dry mass of a spacecraft pressurization system, helium pressurant may be stored at low temperature and high pressure to increase mass in a given tank volume. Warming this gas through an engine heat exchanger prior to tank pressurization both increases the system efficiency and simplifies the designs of intermediate hardware such as regulators, valves, etc. since the gas is no longer cryogenic. If this type of cold helium pressurization system is used in conjunction with a cryogenic propellant, though, a loss in overall system efficiency can be expected due to heat transfer from the warm ullage gas to the cryogenic propellant which results in a specific volume loss for the pressurant, interpreted as the Collapse Factor. Future spacecraft with cryogenic propellants will likely have a cold helium system, with increasing collapse factor effects as vehicle sizes decrease. To determine the collapse factor effects and overall implementation strategies for a representative design point, a cold helium system was hotfire tested on the Integrated Cryogenic Propulsion Test Article (ICPTA) in a thermal vacuum environment at the NASA Glenn Research Center Plum Brook Station. The ICPTA vehicle is a small lander-sized spacecraft prototype built at NASA Johnson Space Center utilizing cryogenic liquid oxygen/liquid methane propellants and cryogenic helium gas as a pressurant to operate one 2,800lbf 5:1 throttling main engine, two 28lbf Reaction Control Engines (RCE), and two 7lbf RCEs (Figure 1). This vehicle was hotfire tested at a variety of environmental conditions at NASA Plum Brook, ranging from ambient temperature/simulated high altitude, deep thermal/high altitude, and deep thermal/high vacuum conditions. A detailed summary of the vehicle design and testing campaign may be found in Integrated Cryogenic Propulsion Test Article Thermal Vacuum Hotfire Testing, AIAA JPC 2017.

Design and fabrication of a large area freestanding compressive stress SiO2 optical window

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Sangu, Suguru; Ono, Takahito

2016-07-01

This paper reports the design and fabrication of a 7.2 mm  ×  9.6 mm freestanding compressive stress SiO2 optical window without buckling. An application of the SiO2 optical window with and without liquid penetration has been demonstrated for an optical modulator and its optical characteristic is evaluated by using an image sensor. Two methods for SiO2 optical window fabrication have been presented. The first method is a combination of silicon etching and a thermal oxidation process. Silicon capillaries fabricated by deep reactive ion etching (deep RIE) are completely oxidized to form the SiO2 capillaries. The large compressive stress of the oxide causes buckling of the optical window, which is reduced by optimizing the design of the device structure. A magnetron-type RIE, which is investigated for deep SiO2 etching, is the second method. This method achieves deep SiO2 etching together with smooth surfaces, vertical shapes and a high aspect ratio. Additionally, in order to avoid a wrinkling optical window, the idea of a Peano curve structure has been proposed to achieve a freestanding compressive stress SiO2 optical window. A 7.2 mm  ×  9.6 mm optical window area without buckling integrated with an image sensor for an optical modulator has been successfully fabricated. The qualitative and quantitative evaluations have been performed in cases with and without liquid penetration.

MEMS Cantilever Sensor for THz Photoacoustic Chemical Sensing and Spectroscopy

DTIC Science & Technology

2013-12-26

meaning the detector didn’t have to be cryogenically cooled. Piezoresistive cantilever style sensor designs have been fabricated for wind and...made a two cantilever pizeoresistive wind speed sensor that utilized a Wheatstone bridge configuration. The designed cantilevers, etched out of...Murakami et al. in Japan fabricated diaphragm and cantilever PZT microphone sensors for anomaly detection in machines such as turbines or engines

Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2017-02-01

The conventional processing of the III-V nBn photodetectors defines mesa devices by etching the contact n-layer and stopping immediately above the barrier, i.e., a shallow etch. This processing enables great suppression of surface leakage currents without having to explore surface passivation techniques. However, devices that are made with this processing scheme are subject to lateral diffusion currents. To address the lateral diffusion current, we compare the effects of different processing approaches and epitaxial structures of nBn detectors. The conventional solution for eliminating lateral diffusion current, a deep etch through the barrier and the absorber, creates increased dark currents and an increased device failure rate. To avoid deep etch processing, a new device structure is proposed, the inverted-nBn structure. By comparing with the conventional nBn structure, the results show that the lateral diffusion current is effectively eliminated in the inverted-nBn structure without elevating the dark currents.

An FPGA-based instrumentation platform for use at deep cryogenic temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Conway Lamb, I. D.; Colless, J. I.; Hornibrook, J. M.

2016-01-15

We describe the operation of a cryogenic instrumentation platform incorporating commercially available field-programmable gate arrays (FPGAs). The functionality of the FPGAs at temperatures approaching 4 K enables signal routing, multiplexing, and complex digital signal processing in close proximity to cooled devices or detectors within the cryostat. The performance of the FPGAs in a cryogenic environment is evaluated, including clock speed, error rates, and power consumption. Although constructed for the purpose of controlling and reading out quantum computing devices with low latency, the instrument is generic enough to be of broad use in a range of cryogenic applications.

Conceptual overview and preliminary risk assessment of cryogen use in deep underground mine production

NASA Astrophysics Data System (ADS)

Sivret, J.; Millar, D. L.; Lyle, G.

2017-12-01

This research conducts a formal risk assessment for cryogenic fueled equipment in underground environments. These include fans, load haul dump units, and trucks. The motivating advantage is zero-emissions production in the subsurface and simultaneous provision of cooling for ultra deep mine workings. The driving force of the engine is the expansion of the reboiled cryogen following flash evaporation using ambient temperature heat. The cold exhaust mixes with warm mine air and cools the latter further. The use of cryogens as ‘fuel’ leads to much increased fuel transport volumes and motivates special considerations for distribution infrastructure and process including: cryogenic storage, distribution, handling, and transfer systems. Detailed specification of parts and equipment, numerical modelling and preparation of design drawings are used to articulate the concept. The conceptual design process reveals new hazards and risks that the mining industry has not yet encountered, which may yet stymie execution. The major unwanted events include the potential for asphyxiation due to oxygen deficient atmospheres, or physical damage to workers due to exposure to sub-cooled liquids and cryogenic gases. The Global Minerals Industry Risk Management (GMIRM) framework incorporates WRAC and Bow-Tie techniques and is used to identify, assess and mitigate risks. These processes operate upon the competing conceptual designs to identify and eliminate high risk options and improve the safety of the lower risk designs.

Smooth and vertical facet formation for AlGaN-based deep-UV laser diodes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bogart, Katherine Huderle Andersen; Shul, Randy John; Stevens, Jeffrey

2008-10-01

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al{sub x} Ga{sub 1-x} N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greatermore » than 95% of that of a perfectly smooth and vertical facet.« less

Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

NASA Astrophysics Data System (ADS)

Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

2015-01-01

To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

Thermal ink-jet device using single-chip silicon microchannels

NASA Astrophysics Data System (ADS)

Wuu, DongSing; Cheng, Chen-Yue; Horng, RayHua; Chan, G. C.; Chiu, Sao-Ling; Wu, Yi-Yung

1998-06-01

We present a new method to fabricate silicon microfluidic channels by through-hole etching with subsequent planarization. The method is based on etching out the deep grooves through a perforated silicon carbide membrane, followed by sealing the membrane with plasma-enhanced chemical vapor deposition (PECVD). Low-pressure-chemical-vapor- deposited (LPCVD) polysilicon was used as a sacrificial layer to define the channel structure and only one etching step is required. This permits the realization of planarization after a very deep etching step in silicon and offers the possibility for film deposition, resist spinning and film patterning across deep grooves. The process technology was demonstrated on the fabrication of a monolithic silicon microchannel structure for thermal inkjet printing. The Ta-Al heater arrays are integrated on the top of each microchannel, which connect to a common on-chip front-end ink reservoir. The fabrication of this device requires six masks and no active nozzle-to-chip alignment. Moreover, the present micromachining process is compatible with the addition of on-chip circuitry for multiplexing the heater control signals. Heat transfer efficiency to the ink is enhanced by the high thermal conductivity of the silicon carbide in the channel ceiling, while the bulk silicon maintains high interchannel isolation. The fabricated inkjet devices show the droplet sizes of 20 - 50 micrometer in diameter with various channel dimensions and stable ejection of ink droplets more than 1 million.

Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica

NASA Astrophysics Data System (ADS)

Elmlinger, Philipp; Schreivogel, Martin; Schmid, Marc; Kaiser, Myriam; Priester, Roman; Sonström, Patrick; Kneissl, Michael

2016-04-01

The suitability of materials for deep ultraviolet (DUV) waveguides concerning transmittance, fabrication, and coupling properties is investigated and a fused silica core/ambient air cladding waveguide system is presented. This high refractive index contrast system has far better coupling efficiency especially for divergent light sources like LEDs and also a significantly smaller critical bending radius compared to conventional waveguide systems, as simulated by ray-tracing simulations. For the fabrication of 300-ffm-thick multimode waveguides a hydrouoric (HF) acid based wet etch process is compared to selective laser etching (SLE). In order to fabricate thick waveguides out of 300-ffm-thick silica wafers by HF etching, two masking materials, LPCVD silicon nitride and LPCVD poly silicon, are investigated. Due to thermal stress, the silicon nitride deposited wafers show cracks and even break. Using poly silicon as a masking material, no cracks are observed and deep etching in 50 wt% HF acid up to 180 min is performed. While the masked and unmasked silica surface is almost unchanged in terms of roughness, notching defects occur at the remaining polysilicon edge leading to jagged sidewalls. Using SLE, waveguides with high contour accuracy are fabricated and the DUV guiding properties are successfully demonstrated with propagation losses between 0.6 and 0:8 dB=mm. These values are currently limited by sidewall scattering losses.

Method for providing an arbitrary three-dimensional microstructure in silicon using an anisotropic deep etch

DOEpatents

Morales, Alfredo M.; Gonzales, Marcela

2004-06-15

The present invention describes a method for fabricating an embossing tool or an x-ray mask tool, providing microstructures that smoothly vary in height from point-to-point in etched substrates, i.e., structure which can vary in all three dimensions. The process uses a lithographic technique to transfer an image pattern in the surface of a silicon wafer by exposing and developing the resist and then etching the silicon substrate. Importantly, the photoresist is variably exposed so that when developed some of the resist layer remains. The remaining undeveloped resist acts as an etchant barrier to the reactive plasma used to etch the silicon substrate and therefore provides the ability etch structures of variable depths.

A Widely-Accessible Distributed MEMS Processing Environment. The MEMS Exchange Program

DTIC Science & Technology

2012-10-29

promise for high-aspect and deep etching into fused silica. This process capability is important for a DARPA project called the Navigation-Grade...on fused silica samples that appear to allow 2 to 1 aspect ratios in fused silica with a depth of etch of around 125 microns – a dramatic result in a...very hard to etch material such as fused silica! After receiving approval from DARPA, the MEMS Exchange purchased a previously- owned Ulvac etcher

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

ScAlN etch mask for highly selective silicon etching

DOE PAGES

Henry, Michael David; Young, Travis R.; Griffin, Ben

2017-09-08

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Potential Uses of Deep Space Cooling for Exploration Missions

NASA Technical Reports Server (NTRS)

Chambliss, Joe; Sweterlitsch, Jeff; Swickrath, Micahel J.

2012-01-01

Nearly all exploration missions envisioned by NASA provide the capability to view deep space and thus to reject heat to a very low temperature environment. Environmental sink temperatures approach as low as 4 Kelvin providing a natural capability to support separation and heat rejection processes that would otherwise be power and hardware intensive in terrestrial applications. For example, radiative heat transfer can be harnessed to cryogenically remove atmospheric contaminants such as carbon dioxide (CO2). Long duration differential temperatures on sunlit versus shadowed sides of the vehicle could be used to drive thermoelectric power generation. Rejection of heat from cryogenic propellant could counter temperature increases thus avoiding the need to vent propellants. These potential uses of deep space cooling will be addressed in this paper with the benefits and practical considerations of such approaches.

Potential Uses of Deep Space Cooling for Exploration Missions

NASA Technical Reports Server (NTRS)

Chambliss, Joseph; Sweterlitsch, Jeff; Swickrath, Michael

2011-01-01

Nearly all exploration missions envisioned by NASA provide the capability to view deep space and thus to reject heat to a very low temperature environment. Environmental sink temperatures approach as low as 4 Kelvin providing a natural capability to support separation and heat rejection processes that would otherwise be power and hardware intensive in terrestrial applications. For example, radiative heat transfer can be harnessed to cryogenically remove atmospheric contaminants such as carbon dioxide (CO2). Long duration differential temperatures on sunlit versus shadowed sides of the vehicle could be used to drive thermoelectric power generation. Rejection of heat from cryogenic propellant could avoid temperature increase thus avoiding the need to vent propellants. These potential uses of deep space cooling will be addressed in this paper with the benefits and practical considerations of such approaches.

Process for Fabrication of Superconducting Vias for Electrical Connection to Groundplane in Cryogenic Detectors

NASA Technical Reports Server (NTRS)

Denis, Kevin L. (Inventor)

2018-01-01

Disclosed are systems, methods, and non-transitory computer-readable storage media for fabrication of silicon on insulator (SOI) wafers with a superconductive via for electrical connection to a groundplane. Fabrication of the SOI wafer with a superconductive via can involve depositing a superconducting groundplane onto a substrate with the superconducting groundplane having an oxidizing layer and a non-oxidizing layer. A layer of monocrystalline silicon can be bonded to the superconducting groundplane and a photoresist layer can be applied to the layer of monocrystalline silicon and the SOI wafer can be etched with the oxygen rich etching plasma, resulting in a monocrystalline silicon top layer with a via that exposes the superconducting groundplane. Then, the fabrication can involve depositing a superconducting surface layer to cover the via.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Henry, Michael David; Young, Travis R.; Griffin, Ben

Here, this work reports the utilization of a recently developed film, ScAlN, as a silicon etch mask offering significant improvements in high etch selectivity to silicon. Utilization of ScAlN as a fluorine chemistry based deep reactive ion etch mask demonstrated etch selectivity at 23 550:1, four times better than AlN, 11 times better than Al 2O 3, and 148 times better than silicon dioxide with significantly less resputtering at high bias voltage than either Al 2O 3 or AlN. Ellipsometry film thickness measurements show less than 0.3 nm/min mask erosion rates for ScAlN. Micromasking of resputtered Al for Al 2Omore » 3, AlN, and ScAlN etch masks is also reported here, utilizing cross-sectional scanning electron microscope and confocal microscope roughness measurements. With lower etch bias, the reduced etch rate can be optimized to achieve a trench bottom surface roughness that is comparable to SiO 2 etch masks. Etch mask selectivity enabled by ScAlN is likely to make significant improvements in microelectromechanical systems, wafer level packaging, and plasma dicing of silicon.« less

Cryogenic Laser Calorimetry for Impurity Analysis

NASA Technical Reports Server (NTRS)

Swimm, R. T.

1985-01-01

The results of a one-year effort to determine the applicability of laser-calorimetric spectroscopy to the study of deep-level impurities in silicon are presented. Critical considerations for impurity analysis by laser-calorimetric spectroscopy are discussed, the design and performance of a cryogenic laser calorimeter is described, and measurements of background absorption in high-purity silicon are presented.

Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

NASA Astrophysics Data System (ADS)

Chai, Jessica; Walker, Glenn; Wang, Li; Massoubre, David; Tan, Say Hwa; Chaik, Kien; Hold, Leonie; Iacopi, Alan

2015-12-01

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both wet and dry Si etching techniques such as fast Si etch rate, stiction-free, and high etch rate uniformity across a wafer. In addition, this alternative O2-based Si etching technique has additional advantages not commonly associated with dry etchants such as avoiding the use of halogens and has no toxic by-products, which improves safety and simplifies waste disposal. Furthermore, this process also exhibits very high selectivity (>1000:1) with conventional hard masks such as silicon carbide, silicon dioxide and silicon nitride, enabling deep Si etching. In these initial studies, etch rates as high as 9.2 μm/min could be achieved at 1150 °C. Empirical estimation for the calculation of the etch rate as a function of the feature size and oxygen flow rate are presented and used as proof of concepts.

Deformation behavior of austenitic stainless steel at deep cryogenic temperatures

NASA Astrophysics Data System (ADS)

Han, Wentuo; Liu, Yuchen; Wan, Farong; Liu, Pingping; Yi, Xiaoou; Zhan, Qian; Morrall, Daniel; Ohnuki, Somei

2018-06-01

The nonmagnetic austenite steels are the jacket materials for low-temperature superconductors of fusion reactors. The present work provides evidences that austenites transform to magnetic martensite when deformation with a high-strain is imposed at 77 K and 4.2 K. The 4.2 K test is characterized by serrated yielding that is related to the specific motion of dislocations and phase transformations. The in-situ transmission electron microscope (TEM) observations in nanoscale reveal that austenites achieve deformation by twinning under low-strain conditions at deep cryogenic temperatures. The generations of twins, martensitic transformations, and serrated yielding are in order of increasing difficulty.

Ballasting by cryogenic gypsum enhances carbon export in a Phaeocystis under-ice bloom.

PubMed

Wollenburg, J E; Katlein, C; Nehrke, G; Nöthig, E-M; Matthiessen, J; Wolf-Gladrow, D A; Nikolopoulos, A; Gázquez-Sanchez, F; Rossmann, L; Assmy, P; Babin, M; Bruyant, F; Beaulieu, M; Dybwad, C; Peeken, I

2018-05-16

Mineral ballasting enhances carbon export from the surface to the deep ocean; however, little is known about the role of this process in the ice-covered Arctic Ocean. Here, we propose gypsum ballasting as a new mechanism that likely facilitated enhanced vertical carbon export from an under-ice phytoplankton bloom dominated by the haptophyte Phaeocystis. In the spring 2015 abundant gypsum crystals embedded in Phaeocystis aggregates were collected throughout the water column and on the sea floor at a depth below 2 km. Model predictions supported by isotopic signatures indicate that 2.7 g m -2 gypsum crystals were formed in sea ice at temperatures below -6.5 °C and released into the water column during sea ice melting. Our finding indicates that sea ice derived (cryogenic) gypsum is stable enough to survive export to the deep ocean and serves as an effective ballast mineral. Our findings also suggest a potentially important and previously unknown role of Phaeocystis in deep carbon export due to cryogenic gypsum ballasting. The rapidly changing Arctic sea ice regime might favour this gypsum gravity chute with potential consequences for carbon export and food partitioning between pelagic and benthic ecosystems.

Two-step narrow ridge cascade diode lasers emitting near $$2~\\mu$$ m

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-01-02

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

NASA Technical Reports Server (NTRS)

Jung, C.; Thomas, B.; Lee, C.; Peralta, A.; Chattopadhyay, G.; Gill, J.; Cooper, K.; Mehdi, I.

2011-01-01

Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

SR&DB Cryogenic Research & Development for Space Applications

NASA Astrophysics Data System (ADS)

Bondarenko, S. I.; Arkhipov, V. T.; Logvinenko, S. P.; Solodovnik, L. L.; Rusanov, K. V.; Shcherbakova, N. S.

The Special Research and Development Bureau (SR&DB) for Cryogenic Technology of the B. Verkin Institute for Low Temperature Physics & Engineering was founded in 1971 and is located in Kharkov, Ukraine. Its primary focus has been in the area of applied r&d in the field of cryogenic technology for space applications. Within this field SR&DB has had many successful accomplishments, especially in the development of satellite based cryogenic cooling systems, mass spectrometer measurement devices, resistence thermometers, and cryogenically cooled optical systems. We have developed very advanced technology in the fields of fluids, heat transfer and hydrodynamics under micro-gravity conditions. Many of the SR&DB cryogenic products have been successfully implemented for former Soviet space applications, both near-earth and deep space. The SR&DB unique experience in many R&D areas can be and are being used for a new generation of space applications which have a requirement for planetary and deep-space missions. Systems we have developed have been proven to have a 5-year life in orbit. Recently we have focused much of our attention, as well, to the requirement low-weight and low-power systems which are mandatory requirements for outerspace missions. The funtionality of the exterior surfaces of a spacecraft are mainly dependent on the composition of its internally generated local atmosphere. In order to continually assess the content and concentration of components of this atmosphere we have developed space based mass spectrometric measuring devices. Devices which require such continual measurement are optical devices, emission receivers, solar cells, etc. A significant technology advance in the field of cryogenics is the application of cryoagents in systems of life support and spacecraft engine operation. We have studied and have an in-depth comprehension of unique phase-transition for these cryoagents such as oxygen, hydrogen, et al. under microgravity conditions. Currently SR&DB under contract to the National Space Agency of Ukraine has been developing an experimental apparatus for studying the continuous boiling off of cryogenic fluids under micro-gravity conditions.

The effect of Er:YAG laser irradiation on the bond stability of self-etch adhesives at different dentin depths.

PubMed

Karadas, Muhammet; Çağlar, İpek

2017-07-01

The aim of this study was to evaluate the effect of Er:YAG laser irradiation on the micro-shear bond strength of self-etch adhesives to the superficial dentin and the deep dentin before and after thermocycling. Superficial dentin and deep dentin surfaces were prepared by flattening of the occlusal surfaces of extracted human third molars. The deep or superficial dentin specimens were randomized into three groups according to the following surface treatments: group I (control group), group II (Er:YAG laser; 1.2 W), and group III (Er:YAG laser; 0.5 W). Clearfil SE Bond or Clearfil S 3 Bond was applied to each group's dentin surfaces. After construction of the composite blocks on the dentin surface, the micro-shear bond testing of each adhesive was performed at 24 h or after 15,000 thermal cycles. The data were analyzed using a univariate analysis of variance and Tukey's test (p < 0.05). Laser irradiation in superficial dentin did not significantly affect bond strength after thermocycling (p > 0.05). However, deep-dentin specimens irradiated with laser showed significantly higher bond strengths than did control specimens after thermocycling (p < 0.05). Thermocycling led to significant deterioration in the bond strengths of all deep-dentin groups. The stable bond strength after thermocycling was measured for all of the superficial-dentin groups. No significant difference was found between the 0.5 and 1.2 W output power settings. In conclusion, the effect of laser irradiation on the bond strength of self-etch adhesives may be altered by the dentin depth. Regardless of the applied surface treatment, deep dentin showed significant bond degradation.

Cryogenic Technology Development for Exploration Missions

NASA Technical Reports Server (NTRS)

Chato, David J.

2007-01-01

This paper reports the status and findings of different cryogenic technology research projects in support of the President s Vision for Space Exploration. The exploration systems architecture study is reviewed for cryogenic fluid management needs. It is shown that the exploration architecture is reliant on the cryogenic propellants of liquid hydrogen, liquid oxygen and liquid methane. Needs identified include: the key technologies of liquid acquisition devices, passive thermal and pressure control, low gravity mass gauging, prototype pressure vessel demonstration, active thermal control; as well as feed system testing, and Cryogenic Fluid Management integrated system demonstration. Then five NASA technology projects are reviewed to show how these needs are being addressed by technology research. Projects reviewed include: In-Space Cryogenic Propellant Depot; Experimentation for the Maturation of Deep Space Cryogenic Refueling Technology; Cryogenic Propellant Operations Demonstrator; Zero Boil-Off Technology Experiment; and Propulsion and Cryogenic Advanced Development. Advances are found in the areas of liquid acquisition of liquid oxygen, mass gauging of liquid oxygen via radio frequency techniques, computational modeling of thermal and pressure control, broad area cooling thermal control strategies, flight experiments for resolving low gravity issues of cryogenic fluid management. Promising results are also seen for Joule-Thomson pressure control devices in liquid oxygen and liquid methane and liquid acquisition of methane, although these findings are still preliminary.

High-aspect ratio micro- and nanostructures enabled by photo-electrochemical etching for sensing and energy harvesting applications

NASA Astrophysics Data System (ADS)

Alhalaili, Badriyah; Dryden, Daniel M.; Vidu, Ruxandra; Ghandiparsi, Soroush; Cansizoglu, Hilal; Gao, Yang; Saif Islam, M.

2018-03-01

Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE. Plasma-based techniques lead to the formation of dangling bonds, surface traps, carrier leakage paths, and recombination centers. In pursuit of effective PEC etching, we demonstrate an optical system using long wavelength (λ = 975 nm) infra-red (IR) illumination from a high-power laser (1-10 W) to control the PEC etching process in n-type silicon. The silicon wafer surface was patterned with notches through a lithography process and KOH etching. Then, PEC etching was introduced by illuminating the backside of the silicon wafer to enhance depth, resulting in high-aspect ratio structures. The effect of the PEC etching process was optimized by varying light intensities and electrolyte concentrations. This work was focused on determining and optimizing this PEC etching technique on silicon, with the goal of expanding the method to a variety of materials including GaN and SiC that are used in designing optoelectronic and electronic devices, sensors and energy harvesting devices.

Comparative study of resist stabilization techniques for metal etch processing

NASA Astrophysics Data System (ADS)

Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

1999-06-01

This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

Flexible deep brain neural probes based on a parylene tube structure

NASA Astrophysics Data System (ADS)

Zhao, Zhiguo; Kim, Eric; Luo, Hao; Zhang, Jinsheng; Xu, Yong

2018-01-01

Most microfabricated neural probes have limited shank length, which prevents them from reaching many deep brain structures. This paper reports deep brain neural probes with ultra-long penetrating shanks based on a simple but novel parylene tube structure. The mechanical strength of the parylene tube shank is temporarily enhanced during implantation by inserting a metal wire. The metal wire can be removed after implantation, making the implanted probe very flexible and thus minimizing the stress caused by micromotions of brain tissues. Optogenetic stimulation and chemical delivery capabilities can be potentially integrated by taking advantage of the tube structure. Single-shank prototypes with a shank length of 18.2 mm have been developed. The microfabrication process comprises of deep reactive ion etching (DRIE) of silicon, parylene conformal coating/refilling, and XeF2 isotropic silicon etching. In addition to bench-top insertion characterization, the functionality of developed probes has been preliminarily demonstrated by implanting into the amygdala of a rat and recording neural signals.

Self-etching aspects of a three-step etch-and-rinse adhesive.

PubMed

Bahillo, Jose; Roig, Miguel; Bortolotto, Tissiana; Krejci, Ivo

2013-11-01

The purpose of this study is to assess the marginal adaptation of cavities restored with a three-step etch-and-rinse adhesive, OptiBond FL (OFL) under different application protocols. Twenty-four class V cavities were prepared with half of the margins located in enamel and half in dentin. Cavities were restored with OFL and a microhybrid resin composite (Clearfil AP-X). Three groups (n = 8) that differed in the etching technique were tested with thermomechanical loading, and specimens were subjected to quantitative marginal analysis before and after loading. Micromorphology of etching patters on enamel and dentin were observed with SEM. Data was evaluated with Kruskal-Wallis and Bonferroni post hoc test. Significantly lower percent CM (46.9 ± 19.5) were found after loading on enamel in group 3 compared to group 1 (96.5 ± 5.1) and group 2 (93.1 ± 8.1). However, no significant differences (p = 0.30) were observed on dentin margins. Etching enamel with phosphoric acid but avoiding etching dentin before the application of OFL, optimal marginal adaptation could be obtained, evidencing a self-etching primer effect. A reliable adhesive interface was attained with the application of the three-step etch-and-rinse OFL adhesive with a selective enamel etching, representing an advantage on restoring deep cavities.

Cryogenic Selective Surfaces

NASA Technical Reports Server (NTRS)

Youngquist, Robert; Nurge, Mark; Gibson, Tracy; Johnson, Wesley

2017-01-01

The NASA Innovative Advanced Concept (NIAC) program has been funding work at KSC on a novel coating that should allow cryogenic materials to be stored in deep space. The NIAC Symposium will be the last week of September and it is a requirement that the funded material be presented both orally and at a poster session. This DAA submission is requesting approval to go public with both the presentation and the poster.

Flight Development for Cryogenic Fluid Management in Support of Exploration Missions

NASA Technical Reports Server (NTRS)

Chato, David J.

2006-01-01

This paper describes the results of the "Experimentation for the Maturation of Deep Space Cryogenic Refueling Technology" study. The purposes of this study were to identify cryogenic fluids management technologies requiring low gravity flight experiments to bring to technology readiness level (TRL) 5-6; to study many possible flight experiment options; and to develop near-term low-cost flight experiment concepts to mature core technologies of refueling. A total of twenty-five white papers were prepared in the course of this study. Each white paper is briefly summarized and relevant references cited. A total of 90 references are cited.

Status of the LBNF Cryogenic System

DOE PAGES

Montanari, D.; Adamowski, M.; Bremer, J.; ...

2017-12-30

We present that the Sanford Underground Research Facility (SURF) will host the Deep Underground Neutrino Experiment (DUNE), an international multi-kiloton Long-Baseline neutrino experiment that will be installed about a mile underground in Lead, SD. In the current configuration four cryostats will contain a modular detector and a total of 68,400 tons of ultrapure liquid argon, with a level of impurities lower than 100 parts per trillion of oxygen equivalent contamination. The Long-Baseline Neutrino Facility (LBNF) provides the conventional facilities and the cryogenic infrastructure to support DUNE. The system is comprised of three sub-systems: External/Infrastructure, Proximity and Internal cryogenics. An internationalmore » engineering team will design, manufacture, commission, and qualify the LBNF cryogenic system. This contribution presents the modes of operations, layout and main features of the LBNF cryogenic system. Lastly, the expected performance, the functional requirements and the status of the design are also highlighted.« less

Status of the LBNF Cryogenic System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Montanari, D.; Adamowski, M.; Bremer, J.

We present that the Sanford Underground Research Facility (SURF) will host the Deep Underground Neutrino Experiment (DUNE), an international multi-kiloton Long-Baseline neutrino experiment that will be installed about a mile underground in Lead, SD. In the current configuration four cryostats will contain a modular detector and a total of 68,400 tons of ultrapure liquid argon, with a level of impurities lower than 100 parts per trillion of oxygen equivalent contamination. The Long-Baseline Neutrino Facility (LBNF) provides the conventional facilities and the cryogenic infrastructure to support DUNE. The system is comprised of three sub-systems: External/Infrastructure, Proximity and Internal cryogenics. An internationalmore » engineering team will design, manufacture, commission, and qualify the LBNF cryogenic system. This contribution presents the modes of operations, layout and main features of the LBNF cryogenic system. Lastly, the expected performance, the functional requirements and the status of the design are also highlighted.« less

Status of the LBNF Cryogenic System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Montanari, D.; Adamowski, M.; Bremer, J.

2017-01-01

The Sanford Underground Research Facility (SURF) will host the Deep Underground Neutrino Experiment (DUNE), an international multi-kiloton Long-Baseline neutrino experiment that will be installed about a mile underground in Lead, SD. In the current configuration four cryostats will contain a modular detector and a total of 68,400 ton of ultrapure liquid argon, with a level of impurities lower than 100 parts per trillion of oxygen equivalent contamination. The Long-Baseline Neutrino Facility (LBNF) provides the conventional facilities and the cryogenic infrastructure to support DUNE. The system is comprised of three sub-systems: External/Infrastructure, Proximity and Internal cryogenics. An international engineering team willmore » design, manufacture, commission, and qualify the LBNF cryogenic system. This contribution presents the models of operations, layout and main features of the LBNF cryogenic system. The expected performance, the functional requirements and the status of the design are also highlighted.« less

Status of the LBNF Cryogenic System

NASA Astrophysics Data System (ADS)

Montanari, D.; Adamowski, M.; Bremer, J.; Delaney, M.; Diaz, A.; Doubnik, R.; Haaf, K.; Hentschel, S.; Norris, B.; Voirin, E.

2017-12-01

The Sanford Underground Research Facility (SURF) will host the Deep Underground Neutrino Experiment (DUNE), an international multi-kiloton Long-Baseline neutrino experiment that will be installed about a mile underground in Lead, SD. In the current configuration four cryostats will contain a modular detector and a total of 68,400 tons of ultrapure liquid argon, with a level of impurities lower than 100 parts per trillion of oxygen equivalent contamination. The Long-Baseline Neutrino Facility (LBNF) provides the conventional facilities and the cryogenic infrastructure to support DUNE. The system is comprised of three sub-systems: External/Infrastructure, Proximity and Internal cryogenics. An international engineering team will design, manufacture, commission, and qualify the LBNF cryogenic system. This contribution presents the modes of operations, layout and main features of the LBNF cryogenic system. The expected performance, the functional requirements and the status of the design are also highlighted.

Deep silicon etching: current capabilities and future directions

NASA Astrophysics Data System (ADS)

Westerman, Russ; Martinez, Linnell; Pays-Volard, David; Mackenzie, Ken; Lazerand, Thierry

2014-03-01

Deep Reactive Ion Etching (DRIE) has revolutionized a wide variety of MEMS applications since its inception nearly two decades ago. The DRIE technology has been largely responsible for allowing lab scale technology demonstrations to become manufacturable and profitable consumer products. As applications which utilize DRIE technologies continue to expand and evolve, they continue to spawn a range of new requirements and open up exciting opportunities for advancement of DRIE. This paper will examine a number of current and emerging DRIE applications including nanotechnology, and DRIE related packaging technologies such as Through Silicon Via (TSV) and plasma dicing. The paper will discuss a number of technical challenges and solutions associated with these applications including: feature profile control at high aspect ratios, causes and elimination of feature tilt/skew, process options for fragile device structures, and problems associated with through substrate etching. The paper will close with a short discussion around the challenges of implementing DRIE in production environments as well as looking at potentially disruptive enhancements / substitutions for DRIE.

Single-crystal silicon trench etching for fabrication of highly integrated circuits

NASA Astrophysics Data System (ADS)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Die singulation method

DOEpatents

Swiler, Thomas P.; Garcia, Ernest J.; Francis, Kathryn M.

2013-06-11

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with an HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

Die singulation method

DOEpatents

Swiler, Thomas P [Albuquerque, NM; Garcia, Ernest J [Albuquerque, NM; Francis, Kathryn M [Rio Rancho, NM

2014-01-07

A method is disclosed for singulating die from a semiconductor substrate (e.g. a semiconductor-on-insulator substrate or a bulk silicon substrate) containing an oxide layer (e.g. silicon dioxide or a silicate glass) and one or more semiconductor layers (e.g. monocrystalline or polycrystalline silicon) located above the oxide layer. The method etches trenches through the substrate and through each semiconductor layer about the die being singulated, with the trenches being offset from each other around at least a part of the die so that the oxide layer between the trenches holds the substrate and die together. The trenches can be anisotropically etched using a Deep Reactive Ion Etching (DRIE) process. After the trenches are etched, the oxide layer between the trenches can be etched away with a HF etchant to singulate the die. A release fixture can be located near one side of the substrate to receive the singulated die.

CECE: Expanding the Envelope of Deep Throttling in Liquid Oxygen/Liquid Hydrogen Rocket Engines For NASA Exploration Missions

NASA Technical Reports Server (NTRS)

Giuliano, Victor J.; Leonard, Timothy G.; Lyda, Randy T.; Kim, Tony S.

2010-01-01

As one of the first technology development programs awarded by NASA under the Vision for Space Exploration, the Pratt & Whitney Rocketdyne (PWR) Deep Throttling, Common Extensible Cryogenic Engine (CECE) program was selected by NASA in November 2004 to begin technology development and demonstration toward a deep throttling, cryogenic engine supporting ongoing trade studies for NASA s Lunar Lander descent stage. The CECE program leverages the maturity and previous investment of a flight-proven hydrogen/oxygen expander cycle engine, the PWR RL10, to develop technology and demonstrate an unprecedented combination of reliability, safety, durability, throttlability, and restart capabilities in a high-energy cryogenic engine. The testbed selected for the deep throttling demonstration phases of this program was a minimally modified RL10 engine, allowing for maximum current production engine commonality and extensibility with minimum program cost. Three series of demonstrator engine tests, the first in April-May 2006, the second in March-April 2007 and the third in November-December 2008, have demonstrated up to 13:1 throttling (104% to 8% thrust range) of the hydrogen/oxygen expander cycle engine. The first two test series explored a propellant feed system instability ("chug") environment at low throttled power levels. Lessons learned from these two tests were successfully applied to the third test series, resulting in stable operation throughout the 13:1 throttling range. The first three tests have provided an early demonstration of an enabling cryogenic propulsion concept, accumulating over 5,000 seconds of hot fire time over 27 hot fire tests, and have provided invaluable system-level technology data toward design and development risk mitigation for the NASA Altair and future lander propulsion system applications. This paper describes the results obtained from the highly successful third test series as well as the test objectives and early results obtained from a fourth test series conducted over March-May 2010

CECE: Expanding the Envelope of Deep Throttling Technology in Liquid Oxygen/Liquid Hydrogen Rocket Engines for NASA Exploration Missions

NASA Technical Reports Server (NTRS)

Giuliano, Victor J.; Leonard, Timothy G.; Lyda, Randy T.; Kim, Tony S.

2010-01-01

As one of the first technology development programs awarded by NASA under the Vision for Space Exploration, the Pratt & Whitney Rocketdyne (PWR) Deep Throttling, Common Extensible Cryogenic Engine (CECE) program was selected by NASA in November 2004 to begin technology development and demonstration toward a deep throttling, cryogenic engine supporting ongoing trade studies for NASA s Lunar Lander descent stage. The CECE program leverages the maturity and previous investment of a flight-proven hydrogen/oxygen expander cycle engine, the PWR RL10, to develop and demonstrate an unprecedented combination of reliability, safety, durability, throttlability, and restart capabilities in high-energy, cryogenic, in-space propulsion. The testbed selected for the deep throttling demonstration phases of this program was a minimally modified RL10 engine, allowing for maximum current production engine commonality and extensibility with minimum program cost. Four series of demonstrator engine tests have been successfully completed between April 2006 and April 2010, accumulating 7,436 seconds of hot fire time over 47 separate tests. While the first two test series explored low power combustion (chug) and system instabilities, the third test series investigated and was ultimately successful in demonstrating several mitigating technologies for these instabilities and achieved a stable throttling ratio of 13:1. The fourth test series significantly expanded the engine s operability envelope by successfully demonstrating a closed-loop control system and extensive transient modeling to enable lower power engine starting, faster throttle ramp rates, and mission-specific ignition testing. The final hot fire test demonstrated a chug-free, minimum power level of 5.9%, corresponding to an overall 17.6:1 throttling ratio achieved. In total, these tests have provided an early technology demonstration of an enabling cryogenic propulsion concept with invaluable system-level technology data acquisition toward design and development risk mitigation for future lander descent main engines.

Cryogenic Selective Surfaces: A Phase 2 NIAC Project: Mid-Term Continuation Review

NASA Technical Reports Server (NTRS)

Youngquist, Robert; Nurge, Mark; Gibson, Tracy; Johnson, Wesley

2017-01-01

The NASA Innovative Advanced Concepts (NIAC) program has been funding work at KSC (Kennedy Space Center) on a new coating that should allow cryogenic commodities to be stored in deep space. Recently a mid-term review of this work was given. I am requesting that this presentation be cleared for release so that the material can be presented publicly at an upcoming FISO (Future in Space) telecom.

High performance cryogenic turboexpanders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agahi, R.R.; Ershaghi, B.; Lin, M.C.

1996-12-31

The use of turboexpanders for deep cryogenic temperatures has been constrained because of thermal efficiency limitations. This limited thermal efficiency was mostly due to mechanical constraints. Recent improvements in analytical techniques, bearing technology, and design features have made it possible to design and operate turboexpanders at more favorable conditions, such as of higher rotational speeds. Several turboexpander installations in helium and hydrogen processes have shown a significant improvement in plant performance over non-turboexpander options.

Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array.

PubMed

Kong, Lingyu; Zhao, Yunshan; Dasgupta, Binayak; Ren, Yi; Hippalgaonkar, Kedar; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang

2017-06-21

The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

A deep etching mechanism for trench-bridging silicon nanowires

NASA Astrophysics Data System (ADS)

Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Erdem Alaca, B.

2016-03-01

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

A deep etching mechanism for trench-bridging silicon nanowires.

PubMed

Tasdemir, Zuhal; Wollschläger, Nicole; Österle, Werner; Leblebici, Yusuf; Alaca, B Erdem

2016-03-04

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with the surrounding microscale features up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 μm. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.

Quantum-limited Terahertz detection without liquid cryogens

NASA Technical Reports Server (NTRS)

2005-01-01

Under this contract, we have successfully designed, fabricated and tested a revolutionary new type of detector for Terahertz (THz) radiation, the tunable antenna-coupled intersubband Terahertz (TACIT) detector. The lowest-noise THz detectors used in the astrophysics community require cooling to temperatures below 4K. This deep cryogenic requirement forces satellites launched for THz- observing missions to include either large volumes of liquid Helium, complex cryocoolers, or both. Cryogenic requirements thus add significantly to the cost, complexity and mass of satellites and limit the duration of their missions. It hence desirable to develop new detector technologies with less stringent cryogenic requirements. Such detectors will not only be important in space-based astrophysics, but also respond to a growing demand for THz technology for earth-based scientific and commercial applications.

Improved PECVD Si x N y film as a mask layer for deep wet etching of the silicon

NASA Astrophysics Data System (ADS)

Han, Jianqiang; Yin, Yi Jun; Han, Dong; Dong, LiZhen

2017-09-01

Although plasma enhanced chemical vapor deposition (PECVD) silicon nitride (Si x N y ) films have been extensively investigated by many researchers, requirements of film properties vary from device to device. For some applications utilizing Si x N y film as the mask Layer for deep wet etching of the silicon, it is very desirable to obtain a high quality film. In this study, Si x N y films were deposited on silicon substrates by PECVD technique from the mixtures of NH3 and 5% SiH4 diluted in Ar. The deposition temperature and RF power were fixed at 400 °C and 20 W, respectively. By adjusting the SiH4/NH3 flow ratio, Si x N y films of different compositions were deposited on silicon wafers. The stoichiometry, residual stress, etch rate in 1:50 HF, BHF solution and 40% KOH solution of deposited Si x N y films were measured. The experimental results show that the optimum SiH4/NH3 flow ratio at which deposited Si x N y films can perfectly protect the polysilicon resistors on the front side of wafers during KOH etching is between 1.63 and 2.24 under the given temperature and RF power. Polysilicon resistors protected by the Si x N y films can withstand 6 h 40% KOH double-side etching at 80 °C. At the range of SiH4/NH3 flow ratios, the Si/N atom ratio of films ranges from 0.645 to 0.702, which slightly deviate the ideal stoichiometric ratio of LPCVD Si3N4 film. In addition, the silicon nitride films with the best protection effect are not the films of minimum etch rate in KOH solution.

Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration.

PubMed

Sun, Pengfei; Ishihara, Ryoichi; Charbon, Edoardo

2016-02-22

We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD comprehensively and we extend this work to the first flexible SPAD image sensor with in-pixel and off-pixel electronics integrated in CMOS. Experimental results show that dark count rate (DCR) by band-to-band tunneling can be reduced by optimizing multiplication doping. DCR by trap-assisted avalanche, which is believed to be originated from the trench etching process, could be further reduced, resulting in a DCR density of tens to hundreds of Hertz per micrometer square at cryogenic temperature. The influence of the trench etching process onto DCR is also proved by comparison with planar ultrathin-body SPAD structures without trench. Photon detection probability (PDP) can be achieved by wider depletion and drift regions and by carefully optimizing body thickness. PDP in frontside- (FSI) and backside-illumination (BSI) are comparable, thus making this technology suitable for both modes of illumination. Afterpulsing and crosstalk are negligible at 2µs dead time, while it has been proved, for the first time, that a CMOS SPAD pixel of this kind could work in a cryogenic environment. By appropriate choice of substrate, this technology is amenable to implantation for biocompatible photon-counting applications and wherever bended imaging sensors are essential.

Thermal conductivity of silver loaded conductive epoxy from cryogenic to ambient temperature and its application for precision cryogenic noise measurements

NASA Astrophysics Data System (ADS)

Amils, Ricardo I.; Gallego, Juan Daniel; Sebastián, José Luis; Muñoz, Sagrario; Martín, Agustín; Leuther, Arnulf

2016-06-01

The pressure to increase the sensitivity of instrumentation has pushed the use of cryogenic Low Noise Amplifier (LNA) technology into a growing number of fields. These areas range from radio astronomy and deep space communications to fundamental physics. In this context manufacturing for cryogenic environments requires a proper thermal knowledge of the materials to be able to achieve adequate design behavior. In this work, we present experimental measurements of the thermal conductivity of a silver filled conductive epoxy (EPO-TEK H20E) which is widely used in cryogenic electronics applications. The characterization has been made using a sample preparation which mimics the practical use of this adhesive in the fabrication of cryogenic devices. We apply the data obtained to a detailed analysis of the effects of the conductive epoxy in a monolithic thermal noise source used for high accuracy cryogenic microwave noise measurements. In this application the epoxy plays a fundamental role since its limited thermal conductivity allows heating the chip with relatively low power. To our knowledge, the cryogenic thermal conductivity data of this epoxy has not been reported before in the literature in the 4-300 K temperature range. A second non-conductive epoxy (Gray Scotch-Weld 2216 B/A), also widely used in cryogenic applications, has been measured in order to validate the method by comparing with previous published data.

Northrop Grumman TR202 LOX/LH2 Deep Throttling Engine Technology Project Status

NASA Technical Reports Server (NTRS)

Gromski, Jason; Majamaki, Annik; Chianese, Silvio; Weinstock, Vladimir; Kim, Tony S.

2010-01-01

NASA's Propulsion and Cryogenic Advanced Development (PCAD) project is currently developing enabling propulsion technologies in support of future lander missions. To meet lander requirements, several technical challenges need to be overcome, one of which is the ability for the descent engine(s) to operate over a deep throttle range with cryogenic propellants. To address this need, PCAD has enlisted Northrop Grumman Aerospace Systems (NGAS) in a technology development effort associated with the TR202 engine. The TR202 is a LOX/LH2 expander cycle engine driven by independent turbopump assemblies and featuring a variable area pintle injector similar to the injector used on the TR200 Apollo Lunar Module Descent Engine (LMDE). Since the Apollo missions, NGAS has continued to mature deep throttling pintle injector technology. The TR202 program has completed two series of pintle injector testing. The first series of testing used ablative thrust chambers and demonstrated igniter operation as well as stable performance at discrete points throughout the designed 10:1 throttle range. The second series was conducted with calorimeter chambers and demonstrated injector performance at discrete points throughout the throttle range as well as chamber heat flow adequate to power an expander cycle design across the throttle range. This paper provides an overview of the TR202 program, describing the different phases and key milestones. It describes how test data was correlated to the engine conceptual design. The test data obtained has created a valuable database for deep throttling cryogenic pintle technology, a technology that is readily scalable in thrust level.

Low Gravity Issues of Deep Space Refueling

NASA Technical Reports Server (NTRS)

Chato, David J.

2005-01-01

This paper discusses the technologies required to develop deep space refueling of cryogenic propellants and low cost flight experiments to develop them. Key technologies include long term storage, pressure control, mass gauging, liquid acquisition, and fluid transfer. Prior flight experiments used to mature technologies are discussed. A plan is presented to systematically study the deep space refueling problem and devise low-cost experiments to further mature technologies and prepare for full scale flight demonstrations.

Electronic Components and Systems for Cryogenic Space Applications

NASA Technical Reports Server (NTRS)

Patterson, R. L.; Hammoud, A.; Dickman, J. E.; Gerber, S.; Elbuluk, M. E.; Overton, E.

2001-01-01

Electronic components and systems capable of operation at cryogenic temperatures are anticipated in many future NASA space missions such as deep space probes and planetary surface exploration. For example, an unheated interplanetary probe launched to explore the rings of Saturn would reach an average temperature near Saturn of about - 183 C. In addition to surviving the deep space harsh environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing payload development and launch costs. Terrestrial applications where components and systems must operate in low temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation system, and arctic exploration. An on-going research and development program at the NASA Glenn Research Center focuses on the development of reliable electronic devices and efficient power systems capable of surviving in low temperature environments. An overview of the program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained from in-house component testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Wafer hotspot prevention using etch aware OPC correction

NASA Astrophysics Data System (ADS)

Hamouda, Ayman; Power, Dave; Salama, Mohamed; Chen, Ao

2016-03-01

As technology development advances into deep-sub-wavelength nodes, multiple patterning is becoming more essential to achieve the technology shrink requirements. Recently, Optical Proximity Correction (OPC) technology has proposed simultaneous correction of multiple mask-patterns to enable multiple patterning awareness during OPC correction. This is essential to prevent inter-layer hot-spots during the final pattern transfer. In state-of-art literature, multi-layer awareness is achieved using simultaneous resist-contour simulations to predict and correct for hot-spots during mask generation. However, this approach assumes a uniform etch shrink response for all patterns independent of their proximity, which isn't sufficient for the full prevention of inter-exposure hot-spot, for example different color space violations post etch or via coverage/enclosure post etch. In this paper, we explain the need to include the etch component during multiple patterning OPC. We also introduce a novel approach for Etch-aware simultaneous Multiple-patterning OPC, where we calibrate and verify a lumped model that includes the combined resist and etch responses. Adding this extra simulation condition during OPC is suitable for full chip processing from a computation intensity point of view. Also, using this model during OPC to predict and correct inter-exposures hot-spots is similar to previously proposed multiple-patterning OPC, yet our proposed approach more accurately corrects post-etch defects too.

Growth And Characterization Studies Of Advanced Infrared Heterostructures

DTIC Science & Technology

2015-06-30

controlled within 50 arc-seconds for all the samples. The three samples were then processed into deep-etched mesa -type photodiodes, by using standard...contact ultraviolet lithography and wet-chemical etching. The circular mesa -size ranged from 25 to 400 µm in diameter. A 200-nm-thick SiNx film...coating was applied on top of the mesa . Devices were mounted on ceramic leadless chip carriers, and then mounted in the cryostat to characterize their

A model for manuscript submitted to the nth IIR conference on overview of the long-baseline neutrino facility cryogenic system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Montanari, David; Adamowski, Mark; Bremer, Johan

2017-03-09

The Deep Underground Neutrino Experiment (DUNE) collaboration is developing a multi-kiloton Long-Baseline neutrino experiment that will be located one mile underground at the Sanford Underground Research Facility (SURF) in Lead, SD. In the present design, detectors will be located inside four cryostats filled with a total of 68,400 ton of ultrapure liquid argon, at the level of impurities lower than 100 parts per trillion of oxygen equivalent contamination. The Long-Baseline Neutrino Facility (LBNF) is developing the conventional facilities and cryogenics infrastructure supporting this experiment. The cryogenics system is composed of several sub-systems: External/Infrastructure, Proximity, and Internal cryogenics. It will bemore » engineered, manufactured, commissioned, and qualified by an international engineering team. This contribution highlights the main features of the LBNF cryogenic system. It presents its performance, functional requirements and modes of operations. As a result, it also details the status of the design, present and future needs.« less

Deeply-etched micromirror with vertical slit and metallic coating enabling transmission-type optical MEMS filters

NASA Astrophysics Data System (ADS)

Othman, Muhammad A.; Sabry, Yasser M.; Sadek, Mohamed; Nassar, Ismail M.; Khalil, Diaa A.

2016-03-01

In this work we report a novel optical MEMS deeply-etched mirror with metallic coating and vertical slot, where the later allows reflection and transmission by the micromirror. The micromirror as well as fiber grooves are fabricated using deep reactive ion etching technology, where the optical axis is in-plane and the components are self-aligned. The etching depth is 150 μm chosen to improve the micromirror optical throughput. The vertical optical structure is Al metal coated using the shadow mask technique. A fiber-coupled Fabry-Pérot filter is successfully realized using the fabricated structure. Experimental measurements were obtained based on a dielectric-coated optical fiber inserted into a fiber groove facing the slotted micromirror. A versatile performance in terms of the free spectral range and 3-dB bandwidth is achieved.

Method for protecting chip corners in wet chemical etching of wafers

DOEpatents

Hui, Wing C.

1994-01-01

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible.

Method for protecting chip corners in wet chemical etching of wafers

DOEpatents

Hui, W.C.

1994-02-15

The present invention is a corner protection mask design that protects chip corners from undercutting during anisotropic etching of wafers. The corner protection masks abut the chip corner point and extend laterally from segments along one or both corner sides of the corner point, forming lateral extensions. The protection mask then extends from the lateral extensions, parallel to the direction of the corner side of the chip and parallel to scribe lines, thus conserving wafer space. Unmasked bomb regions strategically formed in the protection mask facilitate the break-up of the protection mask during etching. Corner protection masks are useful for chip patterns with deep grooves and either large or small chip mask areas. Auxiliary protection masks form nested concentric frames that etch from the center outward are useful for small chip mask patterns. The protection masks also form self-aligning chip mask areas. The present invention is advantageous for etching wafers with thin film windows, microfine and micromechanical structures, and for forming chip structures more elaborate than presently possible. 63 figures.

Characteristics of n-GaN After Cl2/Ar and Cl2/N2 Inductively Coupled Plasma Etching

NASA Astrophysics Data System (ADS)

Han, Yan-Jun; Xue, Song; Guo, Wen-Ping; Sun, Chang-Zheng; Hao, Zhi-Biao; Luo, Yi

2003-10-01

A systematic study on the effect of inductively coupled plasma (ICP) etching on n-type GaN is presented. The optical and electrical properties and surface stoichiometry of n-type GaN are evaluated using room-temperature photoluminescence (PL) and current-voltage (I-V) characteristic measurements, and X-ray photoelectron spectroscopy (XPS), respectively. Investigation of the effect of additive gas (N2 and Ar) and RF power on these characteristics has also been carried out. It is shown that the decrease in the O/Ga ratio after ICP etching can suppress the deterioration of the near-band-edge emission intensity. Furthermore, N vacancy (VN) with a shallow donor nature and Ga vacancy (VGa) with a deep acceptor nature are generated after ICP etching upon the addition of Ar and N2 to Cl2 plasma, respectively. Lower ohmic contact resistance could be obtained when VN or ion-bombardment-induced defect is dominant at the surface. Improved etching conditions have been obtained based on these results.

Cryogenic Selective Surface - How Cold Can We Go?

NASA Technical Reports Server (NTRS)

Youngquist, Robert; Nurge, Mark

2015-01-01

Selective surfaces have wavelength dependent emissivitya bsorption. These surfaces can be designed to reflect solar radiation, while maximizing infrared emittance, yielding a cooling effect even in sunlight. On earth cooling to -50 C below ambient has been achieved, but in space, outside of the atmosphere, theory using ideal materials has predicted a maximum cooling to 40 K! If this result holds up for real world materials and conditions, then superconducting systems and cryogenic storage can be achieved in space without active cooling. Such a result would enable long term cryogenic storage in deep space and the use of large scale superconducting systems for such applications as galactic cosmic radiation (GCR) shielding and large scale energy storage.

Atomic layer deposition frequency-multiplied Fresnel zone plates for hard x-rays focusing

DOE PAGES

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun; ...

2017-12-01

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

No positive effect of Acid etching or plasma cleaning on osseointegration of titanium implants in a canine femoral condyle press-fit model.

PubMed

Saksø, H; Jakobsen, T; Saksø, M; Baas, J; Jakobsen, Ss; Soballe, K

2013-01-01

Implant surface treatments that improve early osseointegration may prove useful in long-term survival of uncemented implants. We investigated Acid Etching and Plasma Cleaning on titanium implants. In a randomized, paired animal study, four porous coated Ti implants were inserted into the femurs of each of ten dogs. PC (Porous Coating; control)PC+PSHA (Plasma Sprayed Hydroxyapatite; positive control)PC+ET (Acid Etch)PC+ET+PLCN (Plasma Cleaning) After four weeks mechanical fixation was evaluated by push-out test and osseointegration by histomorphometry. The PSHA-coated implants were better osseointegrated than the three other groups on outer surface implant porosity (p<0.05) while there was no statistical difference in deep surface implant porosity when compared with nontreated implant. Within the deep surface implant porosity, there was more newly formed bone in the control group compared to the ET and ET+PCLN groups (p<0.05). In all compared groups, there was no statistical difference in any biomechanical parameter. In terms of osseointegration on outer surface implant porosity PC+PSHA was superior to the other three groups. Neither the acid etching nor the plasma cleaning offered any advantage in terms of implant osseointegration. There was no statistical difference in any of the biomechanical parameters among all groups in the press-fit model at 4 weeks of evaluation time.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Two-year clinical trial of a universal adhesive in total-etch and self-etch mode in non-carious cervical lesions☆

PubMed Central

Lawson, Nathaniel C.; Robles, Augusto; Fu, Chin-Chuan; Lin, Chee Paul; Sawlani, Kanchan; Burgess, John O.

2016-01-01

Objectives To compare the clinical performance of Scotchbond™ Universal Adhesive used in self- and total-etch modes and two-bottle Scotchbond™ Multi-purpose Adhesive in total-etch mode for Class 5 non-carious cervical lesions (NCCLs). Methods 37 adults were recruited with 3 or 6 NCCLs (>1.5 mm deep). Teeth were isolated, and a short cervical bevel was prepared. Teeth were restored randomly with Scotchbond Universal total-etch, Scotchbond Universal self-etch or Scotchbond Multi-purpose followed with a composite resin. Restorations were evaluated at baseline, 6, 12 and 24 months for marginal adaptation, marginal discoloration, secondary caries, and sensitivity to cold using modified USPHS Criteria. Patients and evaluators were blinded. Logistic and linear regression models using a generalized estimating equation were applied to evaluate the effects of time and adhesive material on clinical assessment outcomes over the 24 month follow-up period. Kaplan–Meier method was used to compare the retention between adhesive materials. Results Clinical performance of all adhesive materials deteriorated over time for marginal adaptation, and discoloration (p <0.0001). Both Scotchbond Universal self-etch and Scotchbond Multi-purpose materials were more than three times as likely to contribute to less satisfying performance in marginal discoloration over time than Scotchbond Universal total-etch. The retention rates up to 24 months were 87.6%, 94.9% and 100% for Scotchbond Multi-purpose and Scotchbond Universal self-etch and total-etch, respectively. Conclusions Scotchbond Universal in self- and total- etch modes performed similar to or better than Scotchbond Multipurpose, respectively. Clinical significance 24 month evaluation of a universal adhesive indicates acceptable clinical performance, particularly in a total-etch mode. PMID:26231300

Performance of Power Converters at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Gerber, Scott; Hammoud, Ahmad; Patterson, Richard L.

2001-01-01

Power converters capable of operation at cryogenic temperatures are anticipated to play an important role in the power system architecture of future NASA deep space missions. Design of such converters to survive cryogenic temperatures will improve the power system performance and reduce development and launch costs. Aerospace power systems are mainly a DC distribution network. Therefore, DC/DC and DC/AC converters provide the outputs needed to different loads at various power levels. Recently, research efforts have been performed at the NASA Glenn Research Center (GRC) to design and evaluate DC/DC converters that are capable of operating at cryogenic temperatures. This paper presents a summary of the research performed to evaluate the low temperature performance of five DC/DC converters. Various parameters were investigated as a function of temperature in the range of 20 to -196 C. Data pertaining to the output voltage regulation and efficiency of the converters is presented and discussed.

Effect of Deep Cryogenic treatment on AISI A8 Tool steel & Development of Wear Mechanism maps using Fuzzy Clustering

NASA Astrophysics Data System (ADS)

Pillai, Nandakumar; Karthikeyan, R., Dr.

2018-04-01

Tool steels are widely classified according to their constituents and type of thermal treatments carried out to obtain its properties. Viking a special purpose tool steel coming under AISI A8 cold working steel classification is widely used for heavy duty blanking and forming operations. The optimum combination of wear resistance and toughness as well as ease of machinability in pre-treated condition makes this material accepted in heavy cutting and non cutting tool manufacture. Air or vacuum hardening is recommended as the normal treatment procedure to obtain the desired mechanical and tribological properties for steels under this category. In this study, we are incorporating a deep cryogenic phase within the conventional treatment cycle both before and after tempering. The thermal treatments at sub zero temperatures up to -195°C using cryogenic chamber with liquid nitrogen as medium was conducted. Micro structural changes in its microstructure and the corresponding improvement in the tribological and physical properties are analyzed. The cryogenic treatment leads to more conversion of retained austenite to martensite and also formation of fine secondary carbides. The microstructure is studied using the micrographs taken using optical microscopy. The wear tests are conducted on DUCOM tribometer for different combinations of speed and load under normal temperature. The wear rates and coefficient of friction obtained from these experiments are used to developed wear mechanism maps with the help of fuzzy c means clustering and probabilistic neural network models. Fuzzy C means clustering is an effective algorithm to group data of similar patterns. The wear mechanisms obtained from the computationally developed maps are then compared with the SEM photographs taken and the improvement in properties due to this additional cryogenic treatment is validated.

Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors

NASA Astrophysics Data System (ADS)

Nolde, J. A.; Jackson, E. M.; Bennett, M. F.; Affouda, C. A.; Cleveland, E. R.; Canedy, C. L.; Vurgaftman, I.; Jernigan, G. G.; Meyer, J. R.; Aifer, E. H.

2017-07-01

Longwave infrared detectors using p-type absorbers composed of InAs-rich type-II superlattices (T2SLs) nearly always suffer from high surface currents due to carrier inversion on the etched sidewalls. Here, we demonstrate reticulated shallow etch mesa isolation (RSEMI): a structural method of reducing surface currents in longwave single-band and midwave/longwave dual-band detectors with p-type T2SL absorbers. By introducing a lateral shoulder to increase the separation between the n+ cathode and the inverted absorber surface, a substantial barrier to surface electron flow is formed. We demonstrate experimentally that the RSEMI process results in lower surface current, lower net dark current, much weaker dependence of the current on bias, and higher uniformity compared to mesas processed with a single deep etch. For the structure used, a shoulder width of 2 μm is sufficient to block surface currents.

Sub-100-nm ordered silicon hole arrays by metal-assisted chemical etching

PubMed Central

2013-01-01

Sub-100-nm silicon nanohole arrays were fabricated by a combination of the site-selective electroless deposition of noble metals through anodic porous alumina and the subsequent metal-assisted chemical etching. Under optimum conditions, the formation of deep straight holes with an ordered periodicity (e.g., 100 nm interval, 40 nm diameter, and high aspect ratio of 50) was successfully achieved. By using the present method, the fabrication of silicon nanohole arrays with 60-nm periodicity was also achieved. PMID:24090268

Sensors and Micromachined Devices for the Automotive and New Markets: The Delphi Delco Electronics MEMS Story.

NASA Astrophysics Data System (ADS)

Logsdon, James

2002-03-01

This presentation will provide a brief history of the development of MEMS products and technology, beginning with the manifold absolute pressure sensor in the late seventies through the current variety of Delphi Delco Electronics sensors available today. The technology development of micromachining from uncompensated P plus etch stops to deep reactive ion etching and the technology development of wafer level packaging from electrostatic bonding to glass frit sealing and silicon to silicon direct bonding will be reviewed.

Guiding gate-etch process development using 3D surface reaction modeling for 7nm and beyond

NASA Astrophysics Data System (ADS)

Dunn, Derren; Sporre, John R.; Deshpande, Vaibhav; Oulmane, Mohamed; Gull, Ronald; Ventzek, Peter; Ranjan, Alok

2017-03-01

Increasingly, advanced process nodes such as 7nm (N7) are fundamentally 3D and require stringent control of critical dimensions over high aspect ratio features. Process integration in these nodes requires a deep understanding of complex physical mechanisms to control critical dimensions from lithography through final etch. Polysilicon gate etch processes are critical steps in several device architectures for advanced nodes that rely on self-aligned patterning approaches to gate definition. These processes are required to meet several key metrics: (a) vertical etch profiles over high aspect ratios; (b) clean gate sidewalls free of etch process residue; (c) minimal erosion of liner oxide films protecting key architectural elements such as fins; and (e) residue free corners at gate interfaces with critical device elements. In this study, we explore how hybrid modeling approaches can be used to model a multi-step finFET polysilicon gate etch process. Initial parts of the patterning process through hardmask assembly are modeled using process emulation. Important aspects of gate definition are then modeled using a particle Monte Carlo (PMC) feature scale model that incorporates surface chemical reactions.1 When necessary, species and energy flux inputs to the PMC model are derived from simulations of the etch chamber. The modeled polysilicon gate etch process consists of several steps including a hard mask breakthrough step (BT), main feature etch steps (ME), and over-etch steps (OE) that control gate profiles at the gate fin interface. An additional constraint on this etch flow is that fin spacer oxides are left intact after final profile tuning steps. A natural optimization required from these processes is to maximize vertical gate profiles while minimizing erosion of fin spacer films.2

CUORE: The Three Towers Test

NASA Astrophysics Data System (ADS)

Sparks, Laura; Goodsell, Alison

2009-11-01

Cryogenic Underground Observatory for Rare Events (CUORE) will be part of the next generation of detectors used to search for neutrinoless double beta decay (0vBB). Located in Assergi, Italy at the Gran Sasso National Laboratory (LNGS), CUORE will be a large cryogenic bolometer composed of 988 tellurium dioxide (TeO2) detectors with a total mass of 750 kg, and will search for 0vBB in 130Te. As the experiment will monitor the extremely rare event of 0vBB, all factors contributing to background need to be minimized to effectively increase the sensitivity. We assisted the LNGS researchers over the summer of 2008 by supporting Research and Development efforts to reduce the radioactive background of the experiment. Activities involved decontaminating the copper frame of radon daughters, and chemically etching and lapping the TeO2 crystals with nitric acid and silicon dioxide, respectively, to remove surface contaminants that contribute to background counts. This work was supported in part by NSF grant PHY-0653284 and the California State Faculty Support Grant.

Comprehensive Evaluation of Power Supplies at Cryogenic Temperatures for Deep Space Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Gerber, Scott; Hammoud, Ahmad; Elbuluk, Malik E.; Lyons, Valerie (Technical Monitor)

2002-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many future space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environments, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. DC/DC converters are widely used in space power systems in the areas of power management, conditioning, and control. As part of the on-going Low Temperature Electronics Program at NASA, several commercial-off-the-shelf (COTS) DC/DC converters, with specifications that might fit the requirements of specific future space missions have been selected for investigation at cryogenic temperatures. The converters have been characterized in terms of their performance as a function of temperature in the range of 20 C to - 180 C. These converters ranged in electrical power from 8 W to 13 W, input voltage from 9 V to 72 V and an output voltage of 3.3 V. The experimental set-up and procedures along with the results obtained on the converters' steady state and dynamic characteristics are presented and discussed.

Integrated Cryogenic Propulsion Test Article Thermal Vacuum Hotfire Testing

NASA Technical Reports Server (NTRS)

Morehead, Robert L.; Melcher, J. C.; Atwell, Matthew J.; Hurlbert, Eric A.

2017-01-01

In support of a facility characterization test, the Integrated Cryogenic Propulsion Test Article (ICPTA) was hotfire tested at a variety of simulated altitude and thermal conditions in the NASA Glenn Research Center Plum Brook Station In-Space Propulsion Thermal Vacuum Chamber (formerly B2). The ICPTA utilizes liquid oxygen and liquid methane propellants for its main engine and four reaction control engines, and uses a cold helium system for tank pressurization. The hotfire test series included high altitude, high vacuum, ambient temperature, and deep cryogenic environments, and several hundred sensors on the vehicle collected a range of system level data useful to characterize the operation of an integrated LOX/Methane spacecraft in the space environment - a unique data set for this propellant combination.

Study of radioactive impurities in neutron transmutation doped germanium

NASA Astrophysics Data System (ADS)

Mathimalar, S.; Dokania, N.; Singh, V.; Nanal, V.; Pillay, R. G.; Shrivastava, A.; Jagadeesan, K. C.; Thakare, S. V.

2015-02-01

A program to develop low temperature (mK) sensors with neutron transmutation doped Ge for rare event studies with a cryogenic bolometer has been initiated. For this purpose, semiconductor grade Ge wafers are irradiated with thermal neutron flux from Dhruva reactor at Bhabha Atomic Research Centre (BARC), Mumbai. Spectroscopic studies of irradiated samples have revealed that the environment of the capsule used for irradiating the sample leads to significant levels of 65Zn, 110mAg and 182Ta impurities, which can be reduced by chemical etching of approximately 50 μm thick surface layer. From measurements of the etched samples in the low background counting setup, activity due to trace impurities of 123Sb in bulk Ge is estimated to be 1 Bq / g after irradiation. These estimates indicate that in order to use the NTD Ge sensors for rare event studies, a cooldown period of 2 years would be necessary to reduce the radioactive background to ≤ 1 mBq / g.

Correlation between oxidant concentrations, morphological aspects and etching kinetics of silicon nanowires during silver-assist electroless etching

NASA Astrophysics Data System (ADS)

Moumni, Besma; Jaballah, Abdelkader Ben

2017-12-01

Silicon porosification by silver assisted chemical etching (Ag-ACE) for a short range of H2O2 concentration is reported. We experimentally show that porous silicon (PSi) is obtained for 1% H2O2, whereas silicon nanowires (SiNWs) appeared by simply tuning the concentration of H2O2 to relatively high concentrations up to 8%. The morphological aspects are claimed by scanning electron microscopy proving that the kinetics of SiNWs formation display nonlinear relationships versus H2O2 concentration and etching time. A semi-qualitative electrochemical etching model based on local anodic, Ic, and cathodic, Ia, currents is proposed to explain the different morphological changes, and to unveil the formation pathways of both PS and SiNWs. More importantly, an efficient antireflective character for silicon solar cell (reflectance close to 2%) is realized at 8% H2O2. In addition, the luminescence of the prepared Si-nanostructures is claimed by photoluminescence which exhibit a large enhancement of the intensity and a blue shift for narrow and deep SiNWs.

Method of Forming Textured Silicon Substrate by Maskless Cryogenic Etching

NASA Technical Reports Server (NTRS)

Yee, Karl Y. (Inventor); Homyk, Andrew P. (Inventor)

2014-01-01

Disclosed herein is a textured substrate comprising a base comprising silicon, the base having a plurality of needle like structures depending away from the base, wherein at least one of the needle like structures has a depth of greater than or equal to about 50 micrometers determined perpendicular to the base, and wherein at least one of the needle like structures has a width of less than or equal to about 50 micrometers determined parallel to the base. An anode and a lithium ion battery comprising the textured substrate, and a method of producing the textured substrate are also disclosed.

Process margin enhancement for 0.25-μm metal etch process

NASA Astrophysics Data System (ADS)

Lee, Chung Y.; Ma, Wei Wen; Lim, Eng H.; Cheng, Alex T.; Joy, Raymond; Ross, Matthew F.; Wong, Selmer S.; Marlowe, Trey

2000-06-01

This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCureTM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCureTM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm2. A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl3 and Cl2. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side-wall angles after etch. Only a slight improvement is observed in the isolated to dense bias effects of the etch process. Improved CD control is also achieved by applying the electron beam process, as more consistent CDs are observed after etch.

The effect of reduced gravity on cryogenic nitrogen boiling and pipe chilldown.

PubMed

Darr, Samuel; Dong, Jun; Glikin, Neil; Hartwig, Jason; Majumdar, Alok; Leclair, Andre; Chung, Jacob

2016-01-01

Manned deep space exploration will require cryogenic in-space propulsion. Yet, accurate prediction of cryogenic pipe flow boiling heat transfer is lacking, due to the absence of a cohesive reduced gravity data set covering the expected flow and thermodynamic parameter ranges needed to validate cryogenic two-phase heat transfer models. This work provides a wide range of cryogenic chilldown data aboard an aircraft flying parabolic trajectories to simulate reduced gravity. Liquid nitrogen is used to quench a 1.27 cm diameter tube from room temperature. The pressure, temperature, flow rate, and inlet conditions are reported from 10 tests covering liquid Reynolds number from 2,000 to 80,000 and pressures from 80 to 810 kPa. Corresponding terrestrial gravity tests were performed in upward, downward, and horizontal flow configurations to identify gravity and flow direction effects on chilldown. Film boiling heat transfer was lessened by up to 25% in reduced gravity, resulting in longer time and more liquid to quench the pipe to liquid temperatures. Heat transfer was enhanced by increasing the flow rate, and differences between reduced and terrestrial gravity diminished at high flow rates. The new data set will enable the development of accurate and robust heat transfer models of cryogenic pipe chilldown in reduced gravity.

The effect of reduced gravity on cryogenic nitrogen boiling and pipe chilldown

PubMed Central

Darr, Samuel; Dong, Jun; Glikin, Neil; Hartwig, Jason; Majumdar, Alok; Leclair, Andre; Chung, Jacob

2016-01-01

Manned deep space exploration will require cryogenic in-space propulsion. Yet, accurate prediction of cryogenic pipe flow boiling heat transfer is lacking, due to the absence of a cohesive reduced gravity data set covering the expected flow and thermodynamic parameter ranges needed to validate cryogenic two-phase heat transfer models. This work provides a wide range of cryogenic chilldown data aboard an aircraft flying parabolic trajectories to simulate reduced gravity. Liquid nitrogen is used to quench a 1.27 cm diameter tube from room temperature. The pressure, temperature, flow rate, and inlet conditions are reported from 10 tests covering liquid Reynolds number from 2,000 to 80,000 and pressures from 80 to 810 kPa. Corresponding terrestrial gravity tests were performed in upward, downward, and horizontal flow configurations to identify gravity and flow direction effects on chilldown. Film boiling heat transfer was lessened by up to 25% in reduced gravity, resulting in longer time and more liquid to quench the pipe to liquid temperatures. Heat transfer was enhanced by increasing the flow rate, and differences between reduced and terrestrial gravity diminished at high flow rates. The new data set will enable the development of accurate and robust heat transfer models of cryogenic pipe chilldown in reduced gravity. PMID:28725740

Performance of Universal Adhesive in Primary Molars After Selective Removal of Carious Tissue: An 18-Month Randomized Clinical Trial.

PubMed

Lenzi, Tathiane Larissa; Pires, Carine Weber; Soares, Fabio Zovico Maxnuck; Raggio, Daniela Prócida; Ardenghi, Thiago Machado; de Oliveira Rocha, Rachel

2017-09-15

To evaluate the 18-month clinical performance of a universal adhesive, applied under different adhesion strategies, after selective carious tissue removal in primary molars. Forty-four subjects (five to 10 years old) contributed with 90 primary molars presenting moderately deep dentin carious lesions on occlusal or occluso-proximal surfaces, which were randomly assigned following either self-etch or etch-and-rinse protocol of Scotchbond Universal Adhesive (3M ESPE). Resin composite was incrementally inserted for all restorations. Restorations were evaluated at one, six, 12, and 18 months using the modified United States Public Health Service criteria. Survival estimates for restorations' longevity were evaluated using the Kaplan-Meier method. Multivariate Cox regression analysis with shared frailty to assess the factors associated with failures (P<0.05). Estimated survival rates of the restorations were 100 percent, 100 percent, 90.6 percent, and 81.4 percent at one, six, 12, and 18 months, respectively. The adhesion strategy did not influence the restorations' longevity (P=0.06; 72.2 percent and 89.7 percent with etch-and-rinse and self-etch mode, respectively). Self-etch and etch-and-rinse strategies did not influence the clinical behavior of universal adhesive used in primary molars after selective carious tissue removal; although there was a tendency for better outcome of the self-etch strategy.

In situ nanoscale observations of gypsum dissolution by digital holographic microscopy.

PubMed

Feng, Pan; Brand, Alexander S; Chen, Lei; Bullard, Jeffrey W

2017-06-01

Recent topography measurements of gypsum dissolution have not reported the absolute dissolution rates, but instead focus on the rates of formation and growth of etch pits. In this study, the in situ absolute retreat rates of gypsum (010) cleavage surfaces at etch pits, at cleavage steps, and at apparently defect-free portions of the surface are measured in flowing water by reflection digital holographic microscopy. Observations made on randomly sampled fields of view on seven different cleavage surfaces reveal a range of local dissolution rates, the local rate being determined by the topographical features at which material is removed. Four characteristic types of topographical activity are observed: 1) smooth regions, free of etch pits or other noticeable defects, where dissolution rates are relatively low; 2) shallow, wide etch pits bounded by faceted walls which grow gradually at rates somewhat greater than in smooth regions; 3) narrow, deep etch pits which form and grow throughout the observation period at rates that exceed those at the shallow etch pits; and 4) relatively few, submicrometer cleavage steps which move in a wave-like manner and yield local dissolution fluxes that are about five times greater than at etch pits. Molar dissolution rates at all topographical features except submicrometer steps can be aggregated into a continuous, mildly bimodal distribution with a mean of 3.0 µmolm -2 s -1 and a standard deviation of 0.7 µmolm -2 s -1 .

Etude fondamentale des mecanismes de gravure par plasma de materiaux de pointe: Application a la fabrication de dispositifs photoniques

NASA Astrophysics Data System (ADS)

Stafford, Luc

Advances in electronics and photonics critically depend upon plasma-based materials processing either for transferring small lithographic patterns into underlying materials (plasma etching) or for the growth of high-quality films. This thesis deals with the etching mechanisms of materials using high-density plasmas. The general objective of this work is to provide an original framework for the plasma-material interaction involved in the etching of advanced materials by putting the emphasis on complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. Based on a synthesis of the descriptions proposed by different authors to explain the etching characteristics of simple materials in noble and halogenated plasma mixtures, we propose comprehensive rate models for physical and chemical plasma etching processes. These models have been successfully validated using experimental data published in literature for Si, Pt, W, SiO2 and ZnO. As an example, we have been able to adequately describe the simultaneous dependence of the etch rate on ion and reactive neutral fluxes and on the ion energy. From an exhaustive experimental investigation of the plasma and etching properties, we have also demonstrated that the validity of the proposed models can be extended to complex oxides such as SrTiO3, (Ba,Sr)TiO 3 and SrBi2Ta2O9 films. We also reported for the first time physical aspects involved in plasma etching such as the influence of the film microstructural properties on the sputter-etch rate and the influence of the positive ion composition on the ion-assisted desorption dynamics. Finally, we have used our deep investigation of the etching mechanisms of STO films and the resulting excellent control of the etch rate to fabricate a ridge waveguide for photonic device applications. Keywords: plasma etching, sputtering, adsorption and desorption dynamics, high-density plasmas, plasma diagnostics, advanced materials, photonic applications.

Thermal performance of a modularized replaceable multilayer insulation system for a cryogenic stage

NASA Technical Reports Server (NTRS)

Knoll, R. H.

1977-01-01

A rugged modularized MLI system for a 2.23-meter-diameter (87.6-in.-diam) liquid hydrogen tank was designed, fabricated, and tested under simulated near-earth and deep-space environments. The two blankets of the system were each composed of 17 double-aluminized Mylar radiation shields separated by silk net. The unit area weight of the installed system was 1.54 kg/sqm (0.32 lb/sq ft). The overall average heat transferred into the insulated tank was 22.7 and 0.98 watts (77.4 and 3.3 Btu/hr) during simulated near-earth and deep-space testing, respectively. The near-earth result was only 2.6 times that predicted for an undisturbed insulation system (i.e., no seams or penetrations). Tests indicate that this insulation concept could be useful for a cryogenic space tug or orbit transfer vehicle application.

Cryogenics - Its influence on the selection of the ASTROMAG superconducting magnet coils

NASA Technical Reports Server (NTRS)

Green, M. A.

1990-01-01

ASTROMAG, a particle astrophysics experimental facility proposed for running alongside a Space Station, has a large superconducting magnet to analyze particles coming from deep space. Several types of magnets were investigated for use in the ASTROMAG central facility. The factors which influence the selection of the magnet coil design include: (1) the upper limit of particle momentum resolved (proportional to the integrated field) as a function of solid angle; (2)cryogenic design and its effect on cryogen lifetime for a given central facility mass; and (3) the overall cost of the magnet coils and cryostat. Four magnet types are analyzed in this paper. These include a simple two-coil solenoid (the baseline design),two disk coils at the ends of the helium tank, a two-coil toroid and a thin solenoid plus bucking coil. A balance must be struck between cryostat lifetime, total mass and the integrated field through the detectors. This balance tends to favor coils which are in the same vacuum vessel as the cryogen.

Progress in performance enhancement methods for capacitive silicon resonators

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Ono, Takahito

2017-11-01

In this paper, we review the progress in recent studies on the performance enhancement methods for capacitive silicon resonators. We provide information on various fabrication technologies and design considerations that can be employed to improve the performance of capacitive silicon resonators, including low motional resistance, small insertion loss, and high quality factor (Q). This paper contains an overview of device structures and working principles, fabrication technologies consisting of hermetic packaging, deep reactive-ion etching and neutral beam etching, and design considerations including mechanically coupled, movable electrode structures and piezoresistive heat engines.

Fluorine-Based DRIE of Fused Silica

NASA Technical Reports Server (NTRS)

Yee, Karl; Shcheglov, Kirill; Li, Jian; Choi, Daniel

2007-01-01

A process of deep reactive-ion etching (DRIE) using a fluorine-based gas mixture enhanced by induction-coupled plasma (ICP) has been demonstrated to be effective in forming high-aspect-ratio three-dimensional patterns in fused silica. The patterns are defined in part by an etch mask in the form of a thick, high-quality aluminum film. The process was developed to satisfy a need to fabricate high-aspect-ratio fused-silica resonators for vibratory microgyroscopes, and could be used to satisfy similar requirements for fabricating other fused-silica components.

A simple process to achieve microchannels geometries able to produce hydrodynamic cavitation

NASA Astrophysics Data System (ADS)

Qiu, X.; Cherief, W.; Colombet, D.; Ayela, F.

2017-04-01

We present a simple process to perform microchannels in which cavitating two phase flows are easily producible. Up to now, hydrodynamic cavitation ‘on a chip’ was reached with small flow rates inside microchannels whose micromachining had involved a deep reactive ion etching (D-RIE). The process we present here does not require a D-RIE reactor, as it is only funded on a wet etching of silicon. It leads to a so-called microstep profile, and large cavitating flow rates become possible together with moderate pressure drops.

Polarizing beam splitter of deep-etched triangular-groove fused-silica gratings.

PubMed

Zheng, Jiangjun; Zhou, Changhe; Feng, Jijun; Wang, Bo

2008-07-15

We investigated the use of a deep-etched fused-silica grating with triangular-shaped grooves as a highly efficient polarizing beam splitter (PBS). A triangular-groove PBS grating is designed at a wavelength of 1550 nm to be used in optical communication. When it is illuminated in Littrow mounting, the transmitted TE- and TM-polarized waves are mainly diffracted in the minus-first and zeroth orders, respectively. The design condition is based on the average differences of the grating mode indices, which is verified by using rigorous coupled-wave analysis. The designed PBS grating is highly efficient over the C+L band range for both TE and TM polarizations (>97.68%). It is shown that such a triangular-groove PBS grating can exhibit a higher diffraction efficiency, a larger extinction ratio, and less reflection loss than the binary-phase fused-silica PBS grating.

Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

PubMed

Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

2010-10-01

This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

Three-dimensional collimation of in-plane-propagating light using silicon micromachined mirror

NASA Astrophysics Data System (ADS)

Sabry, Yasser M.; Khalil, Diaa; Saadany, Bassam; Bourouina, Tarik

2014-03-01

We demonstrate light collimation of single-mode optical fibers using deeply-etched three-dimensional curved micromirror on silicon chip. The three-dimensional curvature of the mirror is controlled by a process combining deep reactive ion etching and isotropic etching of silicon. The produced surface is astigmatic with out-of-plane radius of curvature that is about one half the in-plane radius of curvature. Having a 300-μm in-plane radius and incident beam inplane inclined with an angle of 45 degrees with respect to the principal axis, the reflected beam is maintained stigmatic with about 4.25 times reduction in the beam expansion angle in free space and about 12-dB reduction in propagation losses, when received by a limited-aperture detector.

Plasma-deposited amorphous silicon carbide films for micromachined fluidic channels

NASA Astrophysics Data System (ADS)

Wuu, Dong-Sing; Horng, Ray-Hua; Chan, Chia-Chi; Lee, Yih-Shing

1999-04-01

The stress properties of the a-SiC:H films on Si by plasma-enhanced chemical vapor deposition (PECVD) are investigated. It is found that the stability of the a-SiC:H films relates to Si-H bonds breaking and changes the stress toward tensile. No evident reduction in the content of Si-H bonds after thermal cycles was found in the carbon-rich samples. Moreover, a new method to fabricate microchannels by through-hole etching with subsequent planarization is proposed. The process is based on etching out the deep grooves through a perforated a-SiC:H membrane, where poly-Si is used as a sacrificial layer to define the channel structure, followed by PECVD sealing the SiC:H membrane. In order to improve the etching performance, the agitated KOH etch is performed at low temperatures (<50°C). The process technology is demonstrated on the fabrication of microfluidic channels with the low-stress (<0.1 GPa) a-SiC:H membranes.

A molded surface-micromachining and bulk etching release (MOSBE) fabrication platform on (1 1 1) Si for MOEMS

NASA Astrophysics Data System (ADS)

Wu, Mingching; Fang, Weileun

2006-02-01

This work attempts to integrate poly-Si thin film and single-crystal-silicon (SCS) structures in a monolithic process. The process integrated multi-depth DRIE (deep reactive ion etching), trench-refilled molding, a two poly-Si MUMPs process and (1 1 1) Si bulk micromachining to accomplish multi-thickness and multi-depth structures for superior micro-optical devices. In application, a SCS scanning mirror driven by self-aligned vertical comb-drive actuators was demonstrated. The stiffness of the mirror was significantly increased by thick SCS structures. The thin poly-Si film served as flexible torsional springs and electrical routings. The depth difference of the vertical comb electrodes was tuned by DRIE to increase the devices' stroke. Finally, a large moving space was available after the bulk Si etching. In summary, the present fabrication process, named (1 1 1) MOSBE (molded surface-micromachining and bulk etching release on (1 1 1) Si substrate), can further integrate with the MUMPs devices to establish a more powerful platform.

Cryogenic, X-band and Ka-band InP HEMT based LNAs for the Deep Space Network

NASA Technical Reports Server (NTRS)

Bautista, J. J.; Bowen, J. G.; Fernandez, J. E.; Fujiwara, B.; Loreman, J.; Petty, S.; Prater, J. L.

2000-01-01

This paper presents an overview of this development process with emphasis on comparison between modeled and measured, LNA modules, front-end receiver packages employing these modules, and antennae employing these packages.

Cryogenic Design of a Large Superconducting Magnet for Astro-particle Shielding on Deep Space Travel Missions

NASA Astrophysics Data System (ADS)

Bruce, Romain; Baudouy, Bertrand

The Space Radiation Superconducting Shield (SR2S) European project aims at studying a large superconducting toroid magnet to protect the human habitat from the ionizing radiations coming from Galactic Cosmic Ray during long term missions in deep space. Titanium clad MgB2 conductor is used to afford a bending power greater than 5 T.m at 10 K. A specific cryogenic design is needed to cool down this 10 m long and 12.8 m in diameter magnet. A passive cooling system, using a V-groove sunshield, is considered to reduce the heat flux coming from the Sun or Mars. An active configuration, using pulse tube cryocoolers, will be linked to the 80 K thermal screen intercepting most of the heat fluxes coming from the human habitat. The toroid magnet will be connected also to cryocoolers to absorb the few watts reaching its surface. Two kinds of thermal link are being considered to absorb the heat on the 80 K thermal screen. The first one is active, with a pump circulating helium gas in a network of exchange tubes. The second one is passive using long cryogenic pulse heat pipe (PHP) with the evaporator on the surface of the thermal screen and the condenser attached to the pulse tube.

Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

NASA Astrophysics Data System (ADS)

Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

2004-05-01

A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

Multi-Functional, Micro Electromechanical Silicon Carbide Accelerometer

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiS wafer may be also etched.

Multi-functional micro electromechanical devices and method of bulk manufacturing same

NASA Technical Reports Server (NTRS)

Okojie, Robert S. (Inventor)

2004-01-01

A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

Low-noise cryogenic transmission line

NASA Technical Reports Server (NTRS)

Norris, D.

1987-01-01

New low-noise cryogenic input transmission lines have been developed for the Deep Space Network (DSN) at 1.668 GHz for cryogenically cooled Field Effect Transistors (FET) and High Electron Mobility Transistor (HEMT) amplifiers. These amplifiers exhibit very low noise temperatures of 5 K to 15 K, making the requirements for a low-noise input transmission line critical. Noise contribution to the total amplifier system from the low-noise line is less than 0.5 K for both the 1.668-GHz and 2.25-GHz FET systems. The 1.668-GHz input line was installed in six FET systems which were implemented in the DSN for the Venus Balloon Experiment. The 2.25-GHz input line has been implemented in three FET systems for the DSN 34-m HEF antennas, and the design is currently being considered for use at higher frequencies.

Low cost microminiature refrigerators for large unit volume applications

NASA Technical Reports Server (NTRS)

Duboc, R. M., Jr.

1983-01-01

Photolithographic techniques were employed to fabricate small Joule-Thomson refrigerators in laminated substrates. The gas passages of a J-T refrigerator are formed by etching channels as narrow as 50 microns and as shallow as 5 microns in glass plates which are laminated together. Circular refrigerators on the order of 1.5 centimeters in diameter and .75 millimeters thick were produced which cool down to cryogenic temperatures in a few seconds, using Argon or Nitrogen, with no vacuum or radiation insulation. Smaller refrigerators are developed for both faster cooldown and low refrigeration capacity applications. By using this technology, custom refrigerators can be designed to meet specific application requirements.

A Single-Block TRL Test Fixture for the Cryogenic Characterization of Planar Microwave Components

NASA Technical Reports Server (NTRS)

Mejia, M.; Creason, A. S.; Toncich, S. S.; Ebihara, B. T.; Miranda, F. A.

1996-01-01

The High-Temperature-Superconductivity (HTS) group of the RF Technology Branch, Space Electronics Division, is actively involved in the fabrication and cryogenic characterization of planar microwave components for space applications. This process requires fast, reliable, and accurate measurement techniques not readily available. A new calibration standard/test fixture that enhances the integrity and reliability of the component characterization process has been developed. The fixture consists of 50 omega thru, reflect, delay, and device under test gold lines etched onto a 254 microns (0.010 in) thick alumina substrate. The Thru-Reflect-Line (TRL) fixture was tested at room temperature using a 30 omega, 7.62 mm (300 mil) long, gold line as a known standard. Good agreement between the experimental data and the data modelled using Sonnet's em(C) software was obtained for both the return (S(sub 11)) and insertion (S( 21)) losses. A gold two-pole bandpass filter with a 7.3 GHz center frequency was used as our Device Under Test (DUT), and the results compared with those obtained using a Short-Open-Load-Thru (SOLT) calibration technique.

Evaluation of Surlyn 8920 as PHE Visor Material and Evaluations of New Adhesives for Improving Bonding Between Teflon and Stainless Steel at Cryogenic Temperature

NASA Technical Reports Server (NTRS)

Ray, Asit K.

1991-01-01

Two studies are presented, and in the first study, Surlyn 8920 (an ionic and amorphous low density polyethylene made by Dupont) was evaluated as a possible replacement of Plexyglass G as PHE visor material. Four formulations of the polymer were made by adding different amounts of UV stabilizer, energy quencher, and antioxident in a Brabender Plasticorder. The formulated polymers were molded in the form of sheets in a compression molder. Cut samples from the molded sheets were exposed in a weatherometer and tested on Instron Tensile Tester for strength and elongation. Specially molded samples of the formulated polymers were subjected to Charpy Impact Tests. In the second study, preliminary evaluations of adhesives for improvement of bonding between Teflon and stainless steel (SS) were performed. Kapton, a high temperature polyimide made by Dupont, and a rubber based adhesive made by Potter Paint Co., were evaluated against industrial quality epoxy, the current material used to bond Teflon and SS. The degreased surfaces of the SS discs were etched mechanically, with a few of these etched chemically. The surfaces of the SS discs were etched mechanically, with a few of these etched chemically. Bonding strengths were evaluated using lap shear tests on the Instron Tensile Tester for the samples bonded by Kapton and industrial quality epoxy. Bond strengths were also evaluated using a pull test on the Instron for the samples bonded by Potter adhesive (CWL-152) and industrial quality epoxy. Based on limited lap shear data, Kapton gave bond strength favorable compared to that of industrial epoxy. Based on limited pull test data, Kapton bonded and CWL-152 bonded samples showed poor strength compared to epoxy bonded sample.

Micro-Machined High-Frequency (80 MHz) PZT Thick Film Linear Arrays

PubMed Central

Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K. Kirk

2010-01-01

This paper presents the development of a micro-machined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT solgel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (−6 dB) of 60%. An insertion loss of −41 dB and adjacent element crosstalk of −21 dB were found at the center frequency. PMID:20889407

Surface Participation Effects in Titanium Nitride and Niobium Resonators

NASA Astrophysics Data System (ADS)

Dove, Allison; Kreikebaum, John Mark; Livingston, William; Delva, Remy; Qiu, Yanjie; Lolowang, Reinhard; Ramasesh, Vinay; O'Brien, Kevin; Siddiqi, Irfan

Improving the coherence time of superconducting qubits requires a precise understanding of the location and density of surface defects. Superconducting microwave resonators are commonly used for quantum state readout and are a versatile testbed to systematically characterize materials properties as a function of device geometry and fabrication method. We report on sputter deposited titanium nitride and niobium on silicon coplanar waveguide resonators patterned using reactive ion etches to define the device geometry. We discuss the impact of different growth conditions (temperature and electrical bias) and processing techniques on the internal quality factor (Q) of these devices. In particular, to investigate the effect of surface participation, we use a Bosch process to etch many-micron-deep trenches in the silicon substrate and quantify the impact of etch depth and profile on the internal Q. This research was supported by the ARO.

Die singulation method and package formed thereby

DOEpatents

Anderson, Robert C [Tucson, AZ; Shul, Randy J [Albuquerque, NM; Clews, Peggy J [Tijeras, NM; Baker, Michael S [Albuquerque, NM; De Boer, Maarten P [Albuquerque, NM

2012-08-07

A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die.

Three-port beam splitter of a binary fused-silica grating.

PubMed

Feng, Jijun; Zhou, Changhe; Wang, Bo; Zheng, Jiangjun; Jia, Wei; Cao, Hongchao; Lv, Peng

2008-12-10

A deep-etched polarization-independent binary fused-silica phase grating as a three-port beam splitter is designed and manufactured. The grating profile is optimized by use of the rigorous coupled-wave analysis around the 785 nm wavelength. The physical explanation of the grating is illustrated by the modal method. Simple analytical expressions of the diffraction efficiencies and modal guidelines for the three-port beam splitter grating design are given. Holographic recording technology and inductively coupled plasma etching are used to manufacture the fused-silica grating. Experimental results are in good agreement with the theoretical values.

Fabrication Methods for Adaptive Deformable Mirrors

NASA Technical Reports Server (NTRS)

Toda, Risaku; White, Victor E.; Manohara, Harish; Patterson, Keith D.; Yamamoto, Namiko; Gdoutos, Eleftherios; Steeves, John B.; Daraio, Chiara; Pellegrino, Sergio

2013-01-01

Previously, it was difficult to fabricate deformable mirrors made by piezoelectric actuators. This is because numerous actuators need to be precisely assembled to control the surface shape of the mirror. Two approaches have been developed. Both approaches begin by depositing a stack of piezoelectric films and electrodes over a silicon wafer substrate. In the first approach, the silicon wafer is removed initially by plasmabased reactive ion etching (RIE), and non-plasma dry etching with xenon difluoride (XeF2). In the second approach, the actuator film stack is immersed in a liquid such as deionized water. The adhesion between the actuator film stack and the substrate is relatively weak. Simply by seeping liquid between the film and the substrate, the actuator film stack is gently released from the substrate. The deformable mirror contains multiple piezoelectric membrane layers as well as multiple electrode layers (some are patterned and some are unpatterned). At the piezolectric layer, polyvinylidene fluoride (PVDF), or its co-polymer, poly(vinylidene fluoride trifluoroethylene P(VDF-TrFE) is used. The surface of the mirror is coated with a reflective coating. The actuator film stack is fabricated on silicon, or silicon on insulator (SOI) substrate, by repeatedly spin-coating the PVDF or P(VDFTrFE) solution and patterned metal (electrode) deposition. In the first approach, the actuator film stack is prepared on SOI substrate. Then, the thick silicon (typically 500-micron thick and called handle silicon) of the SOI wafer is etched by a deep reactive ion etching process tool (SF6-based plasma etching). This deep RIE stops at the middle SiO2 layer. The middle SiO2 layer is etched by either HF-based wet etching or dry plasma etch. The thin silicon layer (generally called a device layer) of SOI is removed by XeF2 dry etch. This XeF2 etch is very gentle and extremely selective, so the released mirror membrane is not damaged. It is possible to replace SOI with silicon substrate, but this will require tighter DRIE process control as well as generally longer and less efficient XeF2 etch. In the second approach, the actuator film stack is first constructed on a silicon wafer. It helps to use a polyimide intermediate layer such as Kapton because the adhesion between the polyimide and silicon is generally weak. A mirror mount ring is attached by using adhesive. Then, the assembly is partially submerged in liquid water. The water tends to seep between the actuator film stack and silicon substrate. As a result, the actuator membrane can be gently released from the silicon substrate. The actuator membrane is very flat because it is fixed to the mirror mount prior to the release. Deformable mirrors require extremely good surface optical quality. In the technology described here, the deformable mirror is fabricated on pristine substrates such as prime-grade silicon wafers. The deformable mirror is released by selectively removing the substrate. Therefore, the released deformable mirror surface replicates the optical quality of the underlying pristine substrate.

Adhesive performance of a multi-mode adhesive system: 1-year in vitro study.

PubMed

Marchesi, Giulio; Frassetto, Andrea; Mazzoni, Annalisa; Apolonio, Fabianni; Diolosà, Marina; Cadenaro, Milena; Di Lenarda, Roberto; Pashley, David H; Tay, Franklin; Breschi, Lorenzo

2014-05-01

The aim of this study was to investigate the adhesive stability over time of a multi-mode one-step adhesive applied using different bonding techniques on human coronal dentine. The hypotheses tested were that microtensile bond strength (μTBS), interfacial nanoleakage expression and matrix metalloproteinases (MMPs) activation are not affected by the adhesive application mode (following the use of self-etch technique or with the etch-and-rinse technique on dry or wet dentine) or by ageing for 24h, 6 months and 1year in artificial saliva. Human molars were cut to expose middle/deep dentine and assigned to one of the following bonding systems (N=15): (1) Scotchbond Universal (3M ESPE) self-etch mode, (2) Scotchbond Universal etch-and-rinse technique on wet dentine, (3) Scotchbond Universal etch-and-rinse technique on dry dentine, and (4) Prime&Bond NT (Dentsply De Trey) etch-and-rinse technique on wet dentine (control). Specimens were processed for μTBS test in accordance with the non-trimming technique and stressed to failure after 24h, 6 months or 1 year. Additional specimens were processed and examined to assay interfacial nanoleakage and MMP expression. At baseline, no differences between groups were found. After 1 year of storage, Scotchbond Universal applied in the self-etch mode and Prime&Bond NT showed higher μTBS compared to the other groups. The lowest nanoleakage expression was found for Scotchbond Universal applied in the self-etch mode, both at baseline and after storage. MMPs activation was found after application of each tested adhesive. The results of this study support the use of the self-etch approach for bonding the tested multi-mode adhesive system to dentine due to improved stability over time. Improved bonding effectiveness of the tested universal adhesive system on dentine may be obtained if the adhesive is applied with the self-etch approach. Copyright © 2014 Elsevier Ltd. All rights reserved.

Characterization and modeling of low energy ion-induced damage in III-V semiconductors

NASA Astrophysics Data System (ADS)

Chen, Ching-Hui

1997-11-01

Low energy ion-induced damage (sub-keV) created during dry etching processes can extend quite deeply into materials. A systematic study on the deep penetration of dry etch-induced damage is necessary to improve device performance and helpful in further understanding the nature of defect propagation in semiconductors. In this study, a phenomenological model of dry etching damage that includes both effects of ion channeling and defect diffusion has been developed. It underscores that in addition to ion channeling, enhanced defect diffusion also plays an important role in establishing the damage profile. Further, the enhanced diffusion of dry etch- induced damage was experimentally observed for the first time by investigating the influences of concurrent above- bandgap laser illumination and low energy Ar+ ion bombardment on the damage profiles of GaAs/AlGaAs and InP-GaAs/InP heterostructures. The results indicate that non-radiative recombination of electron and hole pairs at defect sites is responsible for the observed radiation enhanced diffusion. DLTS measurements are also employed to characterize the nature of the enhanced diffusion in n-GaAs and reveal that a major component of the ion- induced defects is associated with primary point defects. Using the better understanding of the damage propagation in dry etched materials, a thin layer of low temperature grown GaAs (~200A) was utilized to stop defect propagation during dry etching process. This approach has been successfully applied to reduce ion damage that would occur during the formation of a dry-etch gate recess of a high electron mobility transistor. Finally, some future experiments are proposed and conceptually described, which would further clarify some of the many outstanding issues in the understanding and mitigation of etch- induced damage.

[Application of in situ cryogenic Raman spectroscopy to analysis of fluid inclusions in reservoirs].

PubMed

Chen, Yong; Lin, Cheng-yan; Yu, Wen-quan; Zheng, Jie; Wang, Ai-guo

2010-01-01

Identification of salts is a principal problem for analysis of fluid inclusions in reservoirs. The fluid inclusions from deep natural gas reservoirs in Minfeng sub-sag were analyzed by in situ cryogenic Raman spectroscopy. The type of fluid inclusions was identified by Raman spectroscopy at room temperature. The Raman spectra show that the inclusions contain methane-bearing brine aqueous liquids. The fluid inclusions were analyzed at -180 degrees C by in situ cryogenic Raman spectroscopy. The spectra show that inclusions contain three salts, namely NaCl2, CaCl2 and MgCl2. Sodium chloride is most salt component, coexisting with small calcium chloride and little magnesium chloride. The origin of fluids in inclusions was explained by analysis of the process of sedimentation and diagenesis. The mechanism of diagenesis in reservoirs was also given in this paper. The results of this study indicate that in situ cryogenic Raman spectroscopy is an available method to get the composition of fluid inclusions in reservoirs. Based on the analysis of fluid inclusions in reservoirs by in situ cryogenic Raman spectroscopy with combination of the history of sedimentation and diagenesis, the authors can give important evidence for the type and mechanism of diagenesis in reservoirs.

Ga Lithography in Sputtered Niobium for Superconductive Micro and Nanowires.

DOE PAGES

Henry, Michael David; Lewis, Rupert M.; Wolfley, Steven L.; ...

2014-08-18

This work demonstrates the use of FIB implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12 nm deep with a 14 nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10 um by and 10 um and 100 um by 100 um, demonstrate that doses above than 7.5 x 1015 cm-2 at 30 kV provide adequate mask protection for a 205 nm thick, sputtered Nb film. The resolution of this dry lithographic techniquemore » is demonstrated by fabrication of nanowires 75 nm wide by 10 um long connected to 50 um wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature, Tc =7.7 K, was measured using MPMS. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.« less

Fabrication of high aspect ratio structure and its releasing for silicon on insulator MEMS/MOEMS device application

NASA Astrophysics Data System (ADS)

Fan, Ji; Zhang, Wen Ting; Liu, Jin Quan; Wu, Wen Jie; Zhu, Tao; Tu, Liang Cheng

2015-04-01

We systematically investigate the fabrication and dry-release technology for a high aspect ratio (HAR) structure with vertical and smooth silicon etching sidewalls. One-hundred-micrometer silicon on insulator (SOI) wafers are used in this work. By optimizing the process parameters of inductively coupled plasma deep reactive-ion etching, a HAR (˜25∶1) structure with a microtrench width of 4 μm has been demonstrated. A perfect etching profile has been obtained in which the structures present an almost perfect verticality of 0.10 μm and no sidewall scallops. The root-mean square roughness of silicon sidewalls is 20 to 29 nm. An in situ dry-release method using notching effect is employed after etching. By analysis, we found that the final notch length is typically an aspect-ratio-dependent process. The structure designed in this work has been successfully released by this in situ dry-release method, and the released bottom roughness effectively prohibits the stiction mechanism. The results demonstrate potential applications for design and fabrication of HAR SOI MEMS/MOEMS.

Etching radical controlled gas chopped deep reactive ion etching

DOEpatents

Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

2013-10-01

A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

Refractive microlensarray made of silver-halide sensitized gelatin (SHSG) etched by enzyme with SLM-based lithography

NASA Astrophysics Data System (ADS)

Guo, Xiaowei; Chen, Mingyong; Zhu, Jianhua; Ma, Yanqin; Du, Jinglei; Guo, Yongkang; Du, Chunlei

2006-01-01

A novel method for the fabrication of continuous micro-optical components is presented in this paper. It employs a computer controlled digital-micromirror-device(DMD TM) as a switchable projection mask and silver-halide sensitized gelatin (SHSG) as recording material. By etching SHSG with enzyme solution, the micro-optical components with relief modulation can be generated through special processing procedures. The principles of etching SHSG with enzyme and theoretical analysis for deep etching are also discussed in detail, and the detailed quantitative experiments on the processing procedures are conducted to determine optimum technique parameters. A good linear relationship within a depth range of 4μm was experimentally obtained between exposure dose and relief depth. At last, the microlensarray with 256.8μm radius and 2.572μm depth was achieved. This method is simple, cheap and the aberration in processing procedures can be corrected in the step of designing mask, so it is a practical method to fabricate good continuous profile for low-volume production.

Effect of Dimethyl Sulfoxide on Bond Strength of a Self-Etch Primer and an Etch and Rinse Adhesive to Surface and Deep Dentin.

PubMed

Sharafeddin, Farahnaz; Salehi, Raha; Feizi, Negar

2016-09-01

Composite bond to dentin is crucial in many clinical conditions particularly in deep cavities without enamel margins due to insufficient penetration of adhesive into demineralized dentin. The aim of this study was to assess the shear bond strength (SBS) of a methacrylate-based and a silorane-based composite resin to surface and deep dentin after pretreatment with dimethyl sulfoxide (DMSO). Eighty extracted human premolars were randomly divided into two groups of flat occlusal dentin with different cuts as A: surface group (sections just below the dentinoenamel junction (DEJ) and B: deep group (2 mm below DEJ). Each group was randomly assigned to 4 subgroups and their samples were restored with Adper Single bond (ASB) and Filtek Z350 or Silorane system Adhesive (SA) and Filtek P90 composite resins, using a 3×3mm cylindrical plastic mold. following these steps , the subgroups were assigned as SubgroupA 1 : surface dentin+ Silorane System Primer (SSP)+ Silorane System Bonding (SSB)+ P90; Subgroup A 2 : surface dentin+ 37% etchant (E37%) + Adper Single Bond (ASB)+ Z350; Subgroup A 3 : surface dentin+ DMSO+ SSP+ SSB+ P90; Subgroup A 4 : surface dentin+ E37%+ DMSO+ ASB+ Z350; Subgroup B 1 : deep dentin+ SSP+ SSB+ P90; Subgroup B 2 : deep dentin+ E37%+ ASB+ Z350; Subgroup B 3 : deep dentin+ DMSO+ SSP+ SSB+ P90; Subgroup B 4 :dentin +E37% +DMSO +ASB +Z350. The specimens were thermocycled at 5± 2/55± 2°C for 1000 cycles and then tested for SBS. Using DMSO as dentin conditioner increased SBS of ASB to deep dentin (p< 0.001) and SBS of SA to surface dentin (p= 0.003) but had no effect on SBS of SA to deep dentin (p= 1.00). The ability of DMSO to increase SBS of ASB to deep dentin provides a basis for improving bonding of this composite resin in deep cavities.

Ultrastructure of the surface of dental enamel with molar incisor hypomineralization (MIH) with and without acid etching.

PubMed

Bozal, Carola B; Kaplan, Andrea; Ortolani, Andrea; Cortese, Silvina G; Biondi, Ana M

2015-01-01

The aim of the present work was to analyze the ultrastructure and mineral composition of the surface of the enamel on a molar with MIH, with and without acid etching. A permanent tooth without clinical MIH lesions (control) and a tooth with clinical diagnosis of mild and moderate MIH, with indication for extraction, were processed with and without acid etching (H3PO4 37%, 20") for observation with scanning electron microscope (SEM) ZEISS (Supra 40) and mineral composition analysis with an EDS detector (Oxford Instruments). The control enamel showed normal prismatic surface and etching pattern. The clinically healthy enamel on the tooth with MIH revealed partial loss of prismatic pattern. The mild lesion was porous with occasional cracks. The moderate lesion was more porous, with larger cracks and many scales. The mineral composition of the affected surfaces had lower Ca and P content and higher O and C. On the tooth with MIH, even on normal looking enamel, the demineralization does not correspond to an etching pattern, and exhibits exposure of crystals with rods with rounded ends and less demineralization in the inter-prismatic spaces. Acid etching increased the presence of cracks and deep pores in the adamantine structure of the enamel with lesion. In moderate lesions, the mineral composition had higher content of Ca, P and Cl. Enamel with MIH, even on clinically intact adamantine surfaces, shows severe alterations in the ultrastructure and changes in ionic composition, which affect the acid etching pattern and may interfere with adhesion.

Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2014-08-04

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templatesmore » are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.« less

An optical MEMS accelerometer fabricated using double-sided deep reactive ion etching on silicon-on-insulator wafer

NASA Astrophysics Data System (ADS)

Teo, Adrian J. T.; Li, Holden; Tan, Say Hwa; Yoon, Yong-Jin

2017-06-01

Optical MEMS devices provide fast detection, electromagnetic resilience and high sensitivity. Using this technology, an optical gratings based accelerometer design concept was developed for seismic motion detection purposes that provides miniaturization, high manufacturability, low costs and high sensitivity. Detailed in-house fabrication procedures of a double-sided deep reactive ion etching (DRIE) on a silicon-on-insulator (SOI) wafer for a micro opto electro mechanical system (MOEMS) device are presented and discussed. Experimental results obtained show that the conceptual device successfully captured motion similar to a commercial accelerometer with an average sensitivity of 13.6 mV G-1, and a highest recorded sensitivity of 44.1 mV G-1. A noise level of 13.5 mV was detected due to experimental setup limitations. This is the first MOEMS accelerometer developed using double-sided DRIE on SOI wafer for the application of seismic motion detection, and is a breakthrough technology platform to open up options for lower cost MOEMS devices.

The effect of additional enamel etching and a flowable composite to the interfacial integrity of Class II adhesive composite restorations.

PubMed

Belli, S; Inokoshi, S; Ozer, F; Pereira, P N; Ogata, M; Tagami, J

2001-01-01

This in vitro study evaluated the interfacial integrity of Class II resin composite restorations. The influence of a flowable composite and additional enamel etching was also evaluated. Deep, saucer-shaped Class II cavities were prepared in the mesial and distal proximal surfaces of 25 extracted human molars and assigned to five treatment groups. The gingival margins were extended to approximately 1 mm above the CEJ in 40 cavities and below the CEJ in 10 cavities. The prepared cavities were then restored with a self-etching primer system (Clearfil Liner Bond II) and a hybrid resin composite (Clearfil AP-X), with and without a flowable composite (Protect Liner F) and additional enamel etching with 37% phosphoric acid gel (K-etchant). After finishing, polishing and thermocycling (4 and 60 degrees C, x300), the samples were longitudinally sectioned through the restorations and resin-tooth interfaces were observed directly under a laser scanning microscope. Statistical analysis indicated that the use of a flowable composite produced significantly more (p = 0.04) gap-free resin-dentin interfaces than teeth restored without the flowable composite. However, both flowable composite and enamel etching could not prevent gap formation at enamel-resin interfaces and crack formation on enamel walls.

Addition of Si-Containing Gases for Anisotropic Etching of III-V Materials in Chlorine-Based Inductively Coupled Plasma

NASA Astrophysics Data System (ADS)

Gatilova, Lina; Bouchoule, Sophie; Patriarche, Gilles; Guilet, Stephane

2011-08-01

We discuss the possibility of obtaining high-aspect-ratio etching of InP materials in Cl2- and HBr-based inductively coupled plasmas (ICP) with the addition of Si-containing gases (SiH4 or SiCl4). A vertical and smooth etching profile is demonstrated in SiCl4/H2 plasma. The effect of adding of a small amount of SiH4 to a previously optimised Cl2/H2 chemistry is presented, and new SiH4/Cl2 and SiH4/HBr chemistries are proposed. Ex-situ energy-dispersive X-ray spectroscopy coupled to transmission electron microscopy (EDX-TEM) is used to analyze the composition of the thin passivation layer deposited on the etched sidewalls. We show that it consists of a Si-rich silicon oxide (Si/O˜1) in Cl2/H2/SiH4 chemistry, and is changed to nano-crystalline (nc-) Si in SiH4/Cl2 chemistry depending on the SiH4 percentage. Moreover, we show that deep anisotropic etching of InP independent of the electrode coverplate material can be obtained via a SiOx passivation mechanism with the addition of Si-containing gases.

Tissue response to peritoneal implants

NASA Technical Reports Server (NTRS)

Picha, G. J.

1980-01-01

Peritoneal implants were fabricated from poly 2-OH, ethyl methacrylate (HEMA), polyetherurethane (polytetramethylene glycol 1000 MW, 1,4 methylene disocynate, and ethyl diamine), and untreated and sputter treated polytetrafluoroethylene (PTFE). The sputter treated PTFE implants were produced by an 8 cm diameter argon ion source. The treated samples consisted of ion beam sputter polished samples, sputter etched samples (to produce a microscopic surface cone texture) and surface pitted samples (produced by ion beam sputtering to result in 50 microns wide by 100 microns deep square pits). These materials were implanted in rats for periods ranging from 30 minutes to 14 days. The results were evaluated with regard to cell type and attachment kinetics onto the different materials. Scanning electron microscopy and histological sections were also evaluated. In general the smooth hydrophobic surfaces attracted less cells than the ion etched PTFE or the HEMA samples. The ion etching was observed to enhance cell attachment, multinucleated giant cell (MNGC) formation, cell to cell contact, and fibrous capsule formation. The cell responsed in the case of ion etched PTFE to an altered surface morphology. However, equally interesting was the similar attachment kinetics of HEMA verses the ion etched PTFE. However, HEMA resulted in a markedly different response with no MNGC's formation, minimal to no capsule formation, and sample coverage by a uniform cell layer.

The fabrication of diversiform nanostructure forests based on residue nanomasks synthesized by oxygen plasma removal of photoresist

NASA Astrophysics Data System (ADS)

Mao, Haiyang; Wu, Di; Wu, Wengang; Xu, Jun; Hao, Yilong

2009-11-01

A simple lithography-free approach for fabricating diversiform nanostructure forests is presented. The key technique of the approach is that randomly distributed nanoscale residues can be synthesized on substrates simply by removing photoresist with oxygen plasma bombardment. These nanoresidues can function as masks in the subsequent etching process for nanopillars. By further spacer and then deep etching processes, a variety of forests composed of regular, tulip-like or hollow-head nanopillars as well as nanoneedles are successfully achieved in different etching conditions. The pillars have diameters of 30-200 nm and heights of 400 nm-3 µm. The needles reach several microns in height, with their tips less than 10 nm in diameter. Moreover, microstructures containing these nanostructure forests, such as surface microchannels, have also been fabricated. This approach is compatible with conventional micro/nano-electromechanical system (MEMS/NEMS) fabrication.

Deep anisotropic ICP plasma etching designed for high-volume MEMS manufacturing

NASA Astrophysics Data System (ADS)

Yu, Keven; Feldbaum, Michael; Pandhumsoporn, Tam; Gadgil, Prashant

1999-08-01

ICP plasma etching is gaining widespread acceptance as an enabling micromachining technology for advanced MEMS fabrication. Whereas this technology has shown a capability of delivering multiple novel applications for R and D, its acceptance by industry for high volume production has been limited. This acceptance into production will only occur when the plasma etching equipment with this technology offers the device performance, throughput, reliability, and uptime criteria required by a production facility. The design of the plasma etcher using this technology and the process capability it consequently delivers, has significant implications in making this a reality. Alcatel has been supplying such a technology to this MEMS industry for over 5 years and in the interim has evolved its product and process to make this technology production worthy. Alcatel's next generation etcher, the Alcatel 601E, offers multiple advantages to MEMS manufacturers in realizing their production goals.

Micro-fabricated packed gas chromatography column based on laser etching technology.

PubMed

Sun, J H; Guan, F Y; Zhu, X F; Ning, Z W; Ma, T J; Liu, J H; Deng, T

2016-01-15

In this work, a micro packed gas chromatograph column integrated with a micro heater was fabricated by using laser etching technology (LET) for analyzing environmental gases. LET is a powerful tool to etch deep well-shaped channels on the glass wafer, and it is the most effective way to increase depth of channels. The fabricated packed GC column with a length of over 1.6m, to our best knowledge, which is the longest so far. In addition, the fabricated column with a rectangular cross section of 1.2mm (depth) × 0.6mm (width) has a large aspect ratio of 2:1. The results show that the fabricated packed column had a large sample capacity, achieved a separation efficiency of about 5800 plates/m and eluted highly symmetrical Gaussian peaks. Copyright © 2015 Elsevier B.V. All rights reserved.

Fabrication of lithographically defined optical coupling facets for silicon-on-insulator waveguides by inductively coupled plasma etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yap, K.P.; Lamontagne, B.; Delage, A.

2006-05-15

We present a technique to lithographically define and fabricate all required optical facets on a silicon-on-insulator photonic integrated circuit by an inductively coupled plasma etch process. This technique offers 1 {mu}m positioning accuracy of the facets at any location within the chip and eliminates the need of polishing. Facet fabrication consists of two separate steps to ensure sidewall verticality and minimize attack on the end surfaces of the waveguides. Protection of the waveguides by a thermally evaporated aluminum layer before the 40-70 {mu}m deep optical facet etching has been proven essential in assuring the facet smoothness and integrity. Both scanningmore » electron microscopy analysis and optical measurement results show that the quality of the facets prepared by this technique is comparable to the conventional facets prepared by polishing.« less

Thermal performance of an integrated thermal protection system for long-term storage of cryogenic propellants in space

NASA Technical Reports Server (NTRS)

Dewitt, R. L.; Boyle, R. J.

1977-01-01

It was demonstrated that cryogenic propellants can be stored unvented in space long enough to accomplish a Saturn orbiter mission after 1,200-day coast. The thermal design of a hydrogen-fluorine rocket stage was carried out, and the hydrogen tank, its support structure, and thermal protection system were tested in a vacuum chamber. Heat transfer rates of approximately 23 W were measured in tests to simulate the near-Earth portion of the mission. Tests to simulate the majority of the time the vehicle would be in deep space and sun-oriented resulted in a heat transfer rate of 0.11 W.

Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

NASA Astrophysics Data System (ADS)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

NASA Astrophysics Data System (ADS)

Tregulov, V. V.; Litvinov, V. G.; Ermachikhin, A. V.

2017-11-01

Defects in a semiconductor structure of a photoelectric converter of solar energy based on a p-n junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.

Influence of ageing on self-etch adhesives: one-step vs. two-step systems.

PubMed

Marchesi, Giulio; Frassetto, Andrea; Visintini, Erika; Diolosà, Marina; Turco, Gianluca; Salgarello, Stefano; Di Lenarda, Roberto; Cadenaro, Milena; Breschi, Lorenzo

2013-02-01

The aim of this study was to evaluate microtensile bond strength (μTBS) to dentine, interfacial nanoleakage expression, and stability after ageing, of two-step vs. one-step self-etch adhesives. Human molars were cut to expose middle/deep dentine, assigned to groups (n = 15), and treated with the following bonding systems: (i) Optibond XTR (a two-step self-etch adhesive; Kerr), (ii) Clearfil SE Bond (a two-step self-etch adhesive; Kuraray), (iii) Adper Easy Bond (a one-step self-etch adhesive; 3M ESPE), and (iv) Bond Force (a one-step self-etch adhesive; Tokuyama). Specimens were processed for μTBS testing after 24 h, 6 months, or 1 yr of storage in artificial saliva at 37°C. Nanoleakage expression was examined in similarly processed additional specimens. At baseline the μTBS results ranked in the following order: Adper Easy Bond = Optibond XTR ≥Clearfil SE = Bond Force, and interfacial nanoleakage analysis showed Clearfil SE Bond = Adper Easy Bond = Optibond XTR> Bond Force. After 1 yr of storage, Optibond XTR, Clearfil SE Bond, and Adper Easy Bond showed higher μTBS and lower interfacial nanoleakage expression compared with Bond Force. In conclusion, immediate bond strength, nanoleakage expression, and stability over time were not related to the number of steps of the bonding systems, but to their chemical formulations. © 2012 Eur J Oral Sci.

From ‘petal effect’ to ‘lotus effect’ on the highly flexible Silastic S elastomer microstructured using a fluorine based reactive ion etching process

NASA Astrophysics Data System (ADS)

Frankiewicz, Christophe; Zoueshtiagh, Farzam; Talbi, Abdelkrim; Streque, Jérémy; Pernod, Philippe; Merlen, Alain

2014-11-01

A fluorine-based reactive ion etching (RIE) process has been applied on a new family of silicone elastomers named ‘Silastic S’ for the first time. Excellent mechanical properties are the principal advantage of this elastomer. The main objective of this study was (i) to develop a new process with an electrodeposited thin Nickel (Ni) layer as a mask to obtain a more precise pattern transfer for deep etching (ii) to investigate the etch rates and the etch profiles obtained under various plasma conditions (gas mixture ratios and pressure). The resulting process exhibits etch rates that range from 20 µm h-1 to 40 µm h-1. The process was optimized to obtain anisotropic profiles of the edges. Finally, it is shown that (iii) the wetting contact angle could be easily modified with this process from 103° to 162°, with a hysteresis that ranges from 2° to 140°. The process is, at present, the only reported solution to reproduce the ‘petal effect’ (high contact angle hysteresis value) on a highly flexible substrate. A possibility to control the contact angle hysteresis from the ‘petal effect’ to the ‘lotus effect’ (low contact angle hysteresis value) has been investigated to allow a precise control on the required energy to pin or unpin the contact line of water droplets. This opens multiple possibilities to exploit this elastomer in many microfluidics applications.

Northrop Grumman TR202 LOX/LH2 Deep Throttling Engine Project Status

NASA Technical Reports Server (NTRS)

Gromski, J.; Majamaki, A. N.; Chianese, S. G.; Weinstock, V. D.; Kim, T.

2010-01-01

NASA's Propulsion and Cryogenic Advanced Development (PCAD) project is currently developing enabling propulsion technologies in support of the Exploration Initiative, with a particular focus on the needs of the Altair Project. To meet Altair requirements, several technical challenges need to be overcome, one of which is the ability for the lunar descent engine(s) to operate over a deep throttle range with cryogenic propellants. To address this need, PCAD has enlisted Northrop Grumman Aerospace Systems (NGAS) in a technology development effort associated with the TR202, a LOX/LH2 expander cycle engine driven by independent turbopump assemblies and featuring a variable area pintle injector similar to the injector used on the TR200 Apollo Lunar Module Descent Engine (LMDE). Since the Apollo missions, NGAS has continued to mature deep throttling pintle injector technology. The TR202 program has completed two phases of pintle injector testing. The first phase of testing used ablative thrust chambers and demonstrated igniter operation as well as stable performance at several power levels across the designed 10:1 throttle range. The second phase of testing was performed on a calorimeter chamber and demonstrated injector performance at various power levels (75%, 50%, 25%, 10%, and 7.5%) across the throttle range as well as chamber heat flux to show that the engine can close an expander cycle design across the throttle range. This paper provides an overview of the TR202 program. It describes the different phases of the program with the key milestones of each phase. It then shows when those milestones were met. Next, it describes how the test data was used to update the conceptual design and how the test data has created a database for deep throttling cryogenic pintle technology that is readily scaleable and can be used to again update the design once the Altair program's requirements are firm. The final section of the paper describes the path forward, which includes demonstrating continuously throttling with an actuator and pursuing a path towards integrated engine sea-level test-bed testing.

Design of the cryogenic systems for the Near and Far LAr-TPC detectors of the Short-Baseline Neutrino program (SBN) at Fermilab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geynisman, M.; Bremer, J.; Chalifour, M.

The Short-Baseline Neutrino (SBN) physics program at Fermilab and Neutrino Platform (NP) at CERN are part of the international Neutrino Program leading to the development of Long-Baseline Neutrino Facility/Deep Underground Neutrino Experiment (LBNF/DUNE) science project. The SBN program consisting of three Liquid Argon Time Projection Chamber (LAr-TPC) detectors positioned along the Booster Neutrino Beam (BNB) at Fermilab includes an existing detector known as MicroBooNE (170-ton LAr-TPC) plus two new experiments known as SBN’s Near Detector (SBND, ~260 tons) and SBN’s Far Detector (SBN-FD, ~760 tons). All three detectors have distinctly different design of their cryostats thus defining specific requirements formore » the cryogenic systems. Fermilab has already built two new facilities to house SBND and SBN-FD detectors. The cryogenic systems for these detectors are in various stages of design and construction with CERN and Fermilab being responsible for delivery of specific sub-systems. This contribution presents specific design requirements and typical implementation solutions for each sub-system of the SBND and SBN-FD cryogenic systems.« less

Design of the cryogenic systems for the Near and Far LAr-TPC detectors of the Short-Baseline Neutrino program (SBN) at Fermilab

NASA Astrophysics Data System (ADS)

Geynisman, M.; Bremer, J.; Chalifour, M.; Delaney, M.; Dinnon, M.; Doubnik, R.; Hentschel, S.; Kim, M. J.; Montanari, C.; Montanari, D.; Nichols, T.; Norris, B.; Sarychev, M.; Schwartz, F.; Tillman, J.; Zuckerbrot, M.

2017-12-01

The Short-Baseline Neutrino (SBN) physics program at Fermilab and Neutrino Platform (NP) at CERN are part of the international Neutrino Program leading to the development of Long-Baseline Neutrino Facility/Deep Underground Neutrino Experiment (LBNF/DUNE) science project. The SBN program consisting of three Liquid Argon Time Projection Chamber (LAr-TPC) detectors positioned along the Booster Neutrino Beam (BNB) at Fermilab includes an existing detector known as MicroBooNE (170-ton LAr-TPC) plus two new experiments known as SBN’s Near Detector (SBND, ∼260 tons) and SBN’s Far Detector (SBN-FD, ∼760 tons). All three detectors have distinctly different design of their cryostats thus defining specific requirements for the cryogenic systems. Fermilab has already built two new facilities to house SBND and SBN-FD detectors. The cryogenic systems for these detectors are in various stages of design and construction with CERN and Fermilab being responsible for delivery of specific sub-systems. This contribution presents specific design requirements and typical implementation solutions for each sub-system of the SBND and SBN-FD cryogenic systems.

Surface roughness in XeF{sub 2} etching of a-Si/c-Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stevens, A.A.E.; Beijerinck, H.C.W.

2005-01-01

Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a {approx}12 nm amorphous silicon (a-Si) top layer and the underlying crystalline silicon (c-Si) bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF{sub 2} flux, we observe a similar evolution of the surface roughness as a function of the XeF{sub 2} dose proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}0.2. In the transition region from the pure amorphous to themore » pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D(XeF{sub 2}){sup {beta}} with {beta}{approx_equal}1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 {sigma}, with {sigma} the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of {sigma} which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphology is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the experimental etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness.« less

Radiation shielding for deep space manned missions by cryogen free superconducting magnets.

NASA Astrophysics Data System (ADS)

Spillantini, Piero

In last years some activity was dedicated to the solution of the following problem: can be artificially created, around a space vehicle in a manned interplanetary travel or around a manned `space base' in deep space, a magnetic field approaching as much as possible the terrestrial one in terms of bending power on the arriving particles? Preliminary evaluations for active shielding based on superconducting magnets were made a few years ago in ESA supported studies. The present increasing interest of permanent space `bases' located in `deep' space requires that this activity continue toward the goal of protecting from Galactic Cosmic Ray (GCR) a large volume `habitat', allowing long duration permanence in space to citizens conducting there `normal' activities besides to a restricted number of astronauts. The problem had to be stated at this global scale because it must be afforded as soon as possible for preparing the needed technologies and their integration in the spacecraft designs for the future manned exploration and for inhabitation of deep space. The realization of the magnetic protection of large volume habitats by well-established nowadays materials and techniques is in principle possible, but not workable in practice for the huge required mass of the superconductor, the too low operating temperature (10K) and the corresponding required cooling power and thermal shielding. The concept of Cryogen Free Superconducting Magnets is the only one practicable. Fast progress in the production of reliable High Temperature Superconducting (HTS) or MgB2 cables and of cryocoolers suitable for space operation opens the perspective of practicable solutions. Quantitative evaluations for the protection of large volume habitats in deep space from GCRs are reported and discussed.

Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach.

PubMed

Ghoshal, Tandra; Holmes, Justin D; Morris, Michael A

2018-05-08

In an effort to develop block copolymer lithography to create high aspect vertical pore arrangements in a substrate surface we have used a microphase separated poly(ethylene oxide) -b- polystyrene (PEO-b-PS) block copolymer (BCP) thin film where (and most unusually) PS not PEO is the cylinder forming phase and PEO is the majority block. Compared to previous work, we can amplify etch contrast by inclusion of hard mask material into the matrix block allowing the cylinder polymer to be removed and the exposed substrate subject to deep etching thereby generating uniform, arranged, sub-25 nm cylindrical nanopore arrays. Briefly, selective metal ion inclusion into the PEO matrix and subsequent processing (etch/modification) was applied for creating iron oxide nanohole arrays. The oxide nanoholes (22 nm diameter) were cylindrical, uniform diameter and mimics the original BCP nanopatterns. The oxide nanohole network is demonstrated as a resistant mask to fabricate ultra dense, well ordered, good sidewall profile silicon nanopore arrays on substrate surface through the pattern transfer approach. The Si nanopores have uniform diameter and smooth sidewalls throughout their depth. The depth of the porous structure can be controlled via the etch process.

Modeling of direct wafer bonding: Effect of wafer bow and etch patterns

NASA Astrophysics Data System (ADS)

Turner, K. T.; Spearing, S. M.

2002-12-01

Direct wafer bonding is an important technology for the manufacture of silicon-on-insulator substrates and microelectromechanical systems. As devices become more complex and require the bonding of multiple patterned wafers, there is a need to understand the mechanics of the bonding process. A general bonding criterion based on the competition between the strain energy accumulated in the wafers and the surface energy that is dissipated as the bond front advances is developed. The bonding criterion is used to examine the case of bonding bowed wafers. An analytical expression for the strain energy accumulation rate, which is the quantity that controls bonding, and the final curvature of a bonded stack is developed. It is demonstrated that the thickness of the wafers plays a large role and bonding success is independent of wafer diameter. The analytical results are verified through a finite element model and a general method for implementing the bonding criterion numerically is presented. The bonding criterion developed permits the effect of etched features to be assessed. Shallow etched patterns are shown to make bonding more difficult, while it is demonstrated that deep etched features can facilitate bonding. Model results and their process design implications are discussed in detail.

Multiscale characterization of partially demineralized superficial and deep dentin surfaces.

PubMed

Pelin, Irina M; Trunfio-Sfarghiu, Ana-Maria; Farge, Pierre; Piednoir, Agnes; Pirat, Christophe; Ramos, Stella M M

2013-08-01

The objective of this study was to address the following question: 'Which properties are modified in partially demineralized surfaces, compared with non-demineralized dentin surfaces, following orthophosphoric acid-etching as performed in clinical procedures?'. For this purpose, the complementary techniques atomic force microscopy/spectroscopy, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and contact angle measurements were used to provide a multiscale characterization of the dentin substrate undergoing the acidic preconditioning designed to enhance wetting. Special attention was given to the influence of the etching pretreatment on the nanomechanical properties at different levels of dentin surfaces, in both dry and hydrated conditions. The four-sided pyramid model (extended Hertz contact model) proved to be accurate for calculating the apparent Young's modulus, offering new information on the elasticity of dentin. The modulus value notably decreased following etching and surface hydration. This study underlines that after the acid etching pretreatment the contribution of the nanomechanical, morphological, and physicochemical modifications has a strong influence on the dentin adhesion properties and thus plays a significant role in the coupling of the adhesive-resin composite build-up material at the dentin surface. © 2013 Eur J Oral Sci.

Efficiency and Regulation of Commercial Low Power DC/DC Converter Modules at Low Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Gerber, Scott; Hammoud, Ahmad; Patterson, Richard L.

2000-01-01

DC/DC converters that are capable of operating at cryogenic temperatures are anticipated to play an important role in the power systems of future NASA deep space missions. Design of these converters to survive cryogenic temperatures will improve the power system performance, and reduce development and launch costs. At the NASA Glenn Research Center Low Temperature Electronics Laboratory, several commercial off-the-shelf dc/dc converter modules were evaluated for their low temperature performance. Various parameters were investigated as a function of temperature, in the range of 20 C to -190 C. Data pertaining to the efficiency and voltage regulation of the tested converters is presented and discussed.

Hydrogeochemistry of groundwaters in and below the base of thick permafrost at Lupin, Nunavut, Canada

NASA Astrophysics Data System (ADS)

Stotler, Randy L.; Frape, Shaun K.; Ruskeeniemi, Timo; Ahonen, Lasse; Onstott, Tullis C.; Hobbs, Monique Y.

2009-06-01

SummaryShield fluids are commonly understood to evolve through water-rock interaction. However, fluids may also concentrate during ice formation. Very little is currently known about groundwater conditions beneath thick permafrost in crystalline environments. This paper evaluates three possible Shield fluid evolution pathways at a crystalline Shield location currently under 500+ meters of permafrost, including surfical cryogenic concentration of seawater, in situ cryogenic concentration and water-rock interaction. A primary goal of this study was to further scientific understanding of permafrost and its role in influencing deep flow system evolution, fluid movement and chemical evolution of waters in crystalline rocks. Precipitation, surface, permafrost and subpermafrost water samples were collected, as well as dissolved and free gas samples, fracture fillings and matrix fluid samples to characterize the site. Investigations of groundwater conditions beneath thick permafrost provides valuable information which can be applied to safety assessment of deep, underground nuclear waste repositories, effects of long-term mining in permafrost areas and understanding analogues to potential life-bearing zones on Mars. The study was conducted in the Lupin gold mine in Nunavut, Canada, located within the zone of continuous permafrost. Through-taliks beneath large lakes in the area provided potential hydraulic connections through the permafrost. Na-Cl and Na-Cl-SO 4 type permafrost waters were contaminated by mining activities, affecting the chloride and nitrate concentrations. High nitrate concentrations (423-2630 mg L -1) were attributed to remnants of blasting. High sulfate concentrations in the permafrost (578-5000 mg L -1) were attributed to naturally occurring and mining enhanced sulfide oxidation. Mine dewatering created an artificial hydraulic gradient, resulting in methane hydrate dissociation at depth. Less contaminated basal waters had medium sulfate concentrations and were Ca-Na dominated, similar to deeper subpermafrost waters. Subpermafrost waters had a wide range of salinities (2.6-40 g L -1). It was unclear from this investigation what impact talik waters would have on deep groundwaters in undisturbed environments. In situ cryogenic concentration due to ice and methane hydrate formation may have concentrated the remaining fluids, however there was no evidence that infiltration of cryogenically concentrated seawater occurred since the last glacial maximum. Matrix waters were dilute and unable to affect groundwater salinity. Fracture infillings were scarce, but calcite fluid inclusion microthermometry indicated a large range in salinities, potentially an additional source of salinity to the system.

Development of Electronics for Low-Temperature Space Missions

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott S.; Overton, Eric

2001-01-01

Electronic systems that are capable of operating at cryogenic temperatures will be needed for many future NASA space missions, including deep space probes and spacecraft for planetary surface exploration. In addition to being able to survive the harsh deep space environment, low-temperature electronics would help improve circuit performance, increase system efficiency, and reduce payload development and launch costs. Terrestrial applications where components and systems must operate in low-temperature environments include cryogenic instrumentation, superconducting magnetic energy storage, magnetic levitation transportation systems, and arctic exploration. An ongoing research and development project for the design, fabrication, and characterization of low-temperature electronics and supporting technologies at NASA Glenn Research Center focuses on efficient power systems capable of surviving in and exploiting the advantages of low-temperature environments. Supporting technologies include dielectric and insulating materials, semiconductor devices, passive power components, optoelectronic devices, and packaging and integration of the developed components into prototype flight hardware. An overview of the project is presented, including a description of the test facilities, a discussion of selected data from component testing, and a presentation of ongoing research activities being performed in collaboration with various organizations.

In vivo effect of a self-etching primer on dentin.

PubMed

Milia, E; Lallai, M R; García-Godoy, F

1999-08-01

To determine the ultrastructural aspects of the dentin collagen area in the cavity preparation floor produced in vivo after phosphoric acid acid-etching or after using Clearfil Liner Bond 2 self-etching primer (LB2 Primer). Twenty-four non-carious third molars scheduled for extraction from young adult patients (16-30 years old) were used. Conventional Class I cavities (+/- 2 mm deep) were prepared on the occlusal surfaces of all teeth using a cylindrical diamond bur on a high-speed handpiece with copious water spray. To avoid dehydration of the dentin, the smear layer-covered dentin was briefly air-dried for 2 seconds. Cavities were assigned at random to the following groups: Group A: Dentin etched for 15 seconds with 34% phosphoric acid, rinsed for 20 seconds and then briefly air-dried for 2 seconds with oil-free compressed air leaving the surfaces slightly moist. Group B: LB2 Primer was applied to the cavity surfaces for 30 seconds and then briefly air-dried to remove the solvent. Group C: The untreated dentin smear layer was used as a control. In all three groups, the cavities were filled incrementally with a resin-based composite (APX), light curing every increment for 40 seconds. After 30 minutes, the teeth were extracted atraumatically and the samples immediately prepared for evaluation with the transmission electron microscope. The use of a self-etching primer did not produce significant morphological changes in the moist dentin substrate. Adverse morphological conditions where observed when there was an excess water on the dentin surface. Phosphoric acid altered the collagen more severely than the self-etching primer.

Superelasticity and cryogenic linear shape memory effects of CaFe 2As 2

DOE PAGES

Sypek, John T.; Yu, Hang; Dusoe, Keith J.; ...

2017-10-20

Shape memory materials have the ability to recover their original shape after a significant amount of deformation when they are subjected to certain stimuli, for instance, heat or magnetic fields. But, their performance is often limited by the energetics and geometry of the martensitic-austenitic phase transformation. We report a unique shape memory behavior in CaFe 2As 2, which exhibits superelasticity with over 13% recoverable strain, over 3 GPa yield strength, repeatable stress–strain response even at the micrometer scale, and cryogenic linear shape memory effects near 50 K. These properties are acheived through a reversible uni-axial phase transformation mechanism, the tetragonal/orthorhombic-to-collapsed-tetragonalmore » phase transformation. These results offer the possibility of developing cryogenic linear actuation technologies with a high precision and high actuation power per unit volume for deep space exploration, and more broadly, suggest a mechanistic path to a class of shape memory materials, ThCr 2Si 2-structured intermetallic compounds.« less

Conceptual Study of Rotary-Wing Microrobotics

DTIC Science & Technology

2008-03-27

tensile residual stress, respectively [78-80]. ......... 48  Table 8: Wing-T design parameters compared to Tsuzuki’s recommendations. ....... 73...Table 13: Summary of key parameters for a feasible rotary-wing MEMS robot design...Direct Methanol Fuel Cell DOF Degrees of Freedom DRIE Deep Reactive Ion Etch FEA Finite Element Analysis FEM Finite Element Modeling FOM Figure

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

PubMed Central

Makey, Ghaith; Elahi, Parviz; Çolakoğlu, Tahir; Ergeçen, Emre; Yavuz, Özgün; Hübner, René; Borra, Mona Zolfaghari; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ömer

2017-01-01

Silicon is an excellent material for microelectronics and integrated photonics1–3 with untapped potential for mid-IR optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realised with techniques like reactive ion etching. Embedded optical elements, like in glass7, electronic devices, and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1 µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has a different optical index than unmodified parts, which enables numerous photonic devices. Optionally, these parts are chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface, i.e., “in-chip” microstructures for microfluidic cooling of chips, vias, MEMS, photovoltaic applications and photonic devices that match or surpass the corresponding state-of-the-art device performances. PMID:28983323

In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon

NASA Astrophysics Data System (ADS)

Tokel, Onur; Turnalı, Ahmet; Makey, Ghaith; Elahi, Parviz; ćolakoǧlu, Tahir; Ergeçen, Emre; Yavuz, Ã.-zgün; Hübner, René; Zolfaghari Borra, Mona; Pavlov, Ihor; Bek, Alpan; Turan, Raşit; Kesim, Denizhan Koray; Tozburun, Serhat; Ilday, Serim; Ilday, F. Ã.-mer

2017-10-01

Silicon is an excellent material for microelectronics and integrated photonics1-3, with untapped potential for mid-infrared optics4. Despite broad recognition of the importance of the third dimension5,6, current lithography methods do not allow the fabrication of photonic devices and functional microelements directly inside silicon chips. Even relatively simple curved geometries cannot be realized with techniques like reactive ion etching. Embedded optical elements7, electronic devices and better electronic-photonic integration are lacking8. Here, we demonstrate laser-based fabrication of complex 3D structures deep inside silicon using 1-µm-sized dots and rod-like structures of adjustable length as basic building blocks. The laser-modified Si has an optical index different to that in unmodified parts, enabling the creation of numerous photonic devices. Optionally, these parts can be chemically etched to produce desired 3D shapes. We exemplify a plethora of subsurface—that is, `in-chip'—microstructures for microfluidic cooling of chips, vias, micro-electro-mechanical systems, photovoltaic applications and photonic devices that match or surpass corresponding state-of-the-art device performances.

Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

NASA Astrophysics Data System (ADS)

Miller, Timothy M.; Abrahams, John H.; Allen, Christine A.

2006-04-01

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

Transparent, superhydrophobic, and wear-resistant surfaces using deep reactive ion etching on PDMS substrates.

PubMed

Ebert, Daniel; Bhushan, Bharat

2016-11-01

Surfaces that simultaneously exhibit superhydrophobicity, low contact angle hysteresis, and high transmission of visible light are of interest for many applications, such as optical devices, solar panels, and self-cleaning windows. Superhydrophobicity could also find use in medical devices where antifouling characteristics are desirable. These applications also typically require mechanical wear resistance. The fabrication of such surfaces is challenging due to the competing goals of superhydrophobicity and transmittance in terms of the required degree of surface roughness. In this study, deep reactive ion etching (DRIE) was used to create rough surfaces on PDMS substrates using a O2/CF4 plasma. Surfaces then underwent an additional treatment with either octafluorocyclobutane (C4F8) plasma or vapor deposition of perfluorooctyltrichlorosilane (PFOTCS) following surface activation with O2 plasma. The effects of surface roughness and the additional surface modifications were examined with respect to the contact angle, contact angle hysteresis, and optical transmittance. To examine wear resistance, a sliding wear experiment was performed using an atomic force microscope (AFM). Copyright © 2016 Elsevier Inc. All rights reserved.

The effects of DRIE operational parameters on vertically aligned micropillar arrays

NASA Astrophysics Data System (ADS)

Miller, Kane; Li, Mingxiao; Walsh, Kevin M.; Fu, Xiao-An

2013-03-01

Vertically aligned silicon micropillar arrays have been created by deep reactive ion etching (DRIE) and used for a number of microfabricated devices including microfluidic devices, micropreconcentrators and photovoltaic cells. This paper delineates an experimental design performed on the Bosch process of DRIE of micropillar arrays. The arrays are fabricated with direct-write optical lithography without photomask, and the effects of DRIE process parameters, including etch cycle time, passivation cycle time, platen power and coil power on profile angle, scallop depth and scallop peak-to-peak distance are studied by statistical design of experiments. Scanning electron microscope images are used for measuring the resultant profile angles and characterizing the scalloping effect on the pillar sidewalls. The experimental results indicate the effects of the determining factors, etch cycle time, passivation cycle time and platen power, on the micropillar profile angles and scallop depths. An optimized DRIE process recipe for creating nearly 90° and smooth surface (invisible scalloping) has been obtained as a result of the statistical design of experiments.

Technology Challenges for Deep-Throttle Cryogenic Engines for Space Exploration

NASA Technical Reports Server (NTRS)

Brown, Kendall K.; Nelson, Karl W.

2005-01-01

Historically, cryogenic rocket engines have not been used for in-space applications due to their additional complexity, the mission need for high reliability, and the challenges of propellant boil-off. While the mission and vehicle architectures are not yet defined for the lunar and Martian robotic and human exploration objectives, cryogenic rocket engines offer the potential for higher performance and greater architecture/mission flexibility. In-situ cryogenic propellant production could enable a more robust exploration program by significantly reducing the propellant mass delivered to low earth orbit, thus warranting the evaluation of cryogenic rocket engines versus the hypergolic bi-propellant engines used in the Apollo program. A multi-use engine. one which can provide the functionality that separate engines provided in the Apollo mission architecture, is desirable for lunar and Mars exploration missions because it increases overall architecture effectiveness through commonality and modularity. The engine requirement derivation process must address each unique mission application and each unique phase within each mission. The resulting requirements, such as thrust level, performance, packaging, bum duration, number of operations; required impulses for each trajectory phase; operation after extended space or surface exposure; availability for inspection and maintenance; throttle range for planetary descent, ascent, acceleration limits and many more must be addressed. Within engine system studies, the system and component technology, capability, and risks must be evaluated and a balance between the appropriate amount of technology-push and technology-pull must be addressed. This paper will summarize many of the key technology challenges associated with using high-performance cryogenic liquid propellant rocket engine systems and components in the exploration program architectures. The paper is divided into two areas. The first area describes how the mission requirements affect the engine system requirements and create system level technology challenges. An engine system architecture for multiple applications or a family of engines based upon a set of core technologies, design, and fabrication approaches may reduce overall programmatic cost and risk. The engine system discussion will also address the characterization of engine cycle figures of merit, configurations, and design approaches for some in-space vehicle alternatives under consideration. The second area evaluates the component-level technology challenges induced from the system requirements. Component technology issues are discussed addressing injector, thrust chamber, ignition system, turbopump assembly, and valve design for the challenging requirements of high reliability, robustness, fault tolerance, deep throttling, reasonable performance (with respect to weight and specific impulse).

Technology Challenges for Deep-Throttle Cryogenic Engines for Space Exploration

NASA Astrophysics Data System (ADS)

Brown, Kendall K.; Nelson, Karl W.

2005-02-01

Historically, cryogenic rocket engines have not been used for in-space applications due to their additional complexity, the mission need for high reliability, and the challenges of propellant boil-off. While the mission and vehicle architectures are not yet defined for the lunar and Martian robotic and human exploration objectives, cryogenic rocket engines offer the potential for higher performance and greater architecture/mission flexibility. In-situ cryogenic propellant production could enable a more robust exploration program by significantly reducing the propellant mass delivered to low earth orbit, thus warranting the evaluation of cryogenic rocket engines versus the hypergolic bipropellant engines used in the Apollo program. A multi-use engine, one which can provide the functionality that separate engines provided in the Apollo mission architecture, is desirable for lunar and Mars exploration missions because it increases overall architecture effectiveness through commonality and modularity. The engine requirement derivation process must address each unique mission application and each unique phase within each mission. The resulting requirements, such as thrust level, performance, packaging, burn duration, number of operations; required impulses for each trajectory phase; operation after extended space or surface exposure; availability for inspection and maintenance; throttle range for planetary descent, ascent, acceleration limits and many more must be addressed. Within engine system studies, the system and component technology, capability, and risks must be evaluated and a balance between the appropriate amount of technology-push and technology-pull must be addressed. This paper will summarize many of the key technology challenges associated with using high-performance cryogenic liquid propellant rocket engine systems and components in the exploration program architectures. The paper is divided into two areas. The first area describes how the mission requirements affect the engine system requirements and create system level technology challenges. An engine system architecture for multiple applications or a family of engines based upon a set of core technologies, design, and fabrication approaches may reduce overall programmatic cost and risk. The engine system discussion will also address the characterization of engine cycle figures of merit, configurations, and design approaches for some in-space vehicle alternatives under consideration. The second area evaluates the component-level technology challenges induced from the system requirements. Component technology issues are discussed addressing injector, thrust chamber, ignition system, turbopump assembly, and valve design for the challenging requirements of high reliability, robustness, fault tolerance, deep throttling, reasonable performance (with respect to weight and specific impulse).

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Operating characteristics of HTS power supply for and improving temporal stability of coated conductor magnet in liquid helium

NASA Astrophysics Data System (ADS)

Park, D. K.; Kim, Y. J.; Yang, S. E.; Kwon, N. Y.; Lee, H. G.; Ko, T. K.

2009-10-01

High temperature superconducting (HTS) magnets have been studied for insert coils of high field nuclear magnetic resonance (NMR) magnets but the temporal stability required for NMR is hard to achieve due to low index value and high joint resistance. In this research, the HTS power supply with magnets using coated conductor (CC) was investigated and tested in helium cryogenic system. All joints were conducted by soldering after etching stabilizer of the CC to minimize joint resistance. The pumping rate was determined by current amplitude and timing sequential control of heaters and the electromagnet. Operating characteristics were analyzed to enhance charging efficiency and the feasibility of temporally stable CC magnet during persistent mode was studied.

Semiconductor with protective surface coating and method of manufacture thereof. [Patent application

DOEpatents

Hansen, W.L.; Haller, E.E.

1980-09-19

Passivation of predominantly crystalline semiconductor devices is provided for by a surface coating of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating of amorphous germanium onto the etched and quenched diode surface in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices, which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating compensates for pre-existing undesirable surface states as well as protecting the semiconductor device against future impregnation with impurities.

Bonding characteristics of self-etching adhesives to intact versus prepared enamel.

PubMed

Perdigão, Jorge; Geraldeli, Saulo

2003-01-01

This study tested the null hypothesis that the preparation of the enamel surface would not affect the enamel microtensile bond strengths of self-etching adhesive materials. Ten bovine incisors were trimmed with a diamond saw to obtain a squared enamel surface with an area of 8 x 8 mm. The specimens were randomly assigned to five adhesives: (1) ABF (Kuraray), an experimental two-bottle self-etching adhesive; (2) Clearfil SE Bond (Kuraray), a two-bottle self-etching adhesive; (3) One-Up Bond F (Tokuyama), an all-in-one adhesive; (4) Prompt L-Pop (3M ESPE), an all-in-one adhesive; and (5) Single Bond (3M ESPE), a two-bottle total-etch adhesive used as positive control. For each specimen, one half was roughened with a diamond bur for 5 seconds under water spray, whereas the other half was left unprepared. The adhesives were applied as per manufacturers' directions. A universal hybrid composite resin (Filtek Z250, 3M ESPE) was inserted in three layers of 1.5 mm each and light-cured. Specimens were sectioned in X and Y directions to obtain bonded sticks with a cross-sectional area of 0.8 +/- 0.2 mm2. Sticks were tested in tension in an Instron at a cross-speed of 1 mm per minute. Statistical analysis was carried out with two-way analysis of variance and Duncan's test at p < .05. Ten extra specimens were processed for observation under a field-emission scanning electron microscope. Single Bond, the total-etch adhesive, resulted in statistically higher microtensile bond strength than any of the other adhesives regardless of the enamel preparation (unprepared = 31.5 MPa; prepared = 34.9 MPa, not statistically different at p < .05). All the self-etching adhesives resulted in higher microtensile bond strength when enamel was roughened than when enamel was left unprepared. However, for ABF and for Clearfil SE Bond this difference was not statistically significant at p > .05. When applied to ground enamel, mean bond strengths of Prompt L-Pop were not statistically different from those of Clearfil SE Bond and ABF. One-Up Bond F did not bond to unprepared enamel. Commercial self-etching adhesives performed better on prepared enamel than on unprepared enamel. The field-emission scanning electron microscope revealed a deep interprismatic etching pattern for the total-etch adhesive, whereas the self-etching systems resulted in an etching pattern ranging from absent to moderate.

Cryogenic Treatment of Al-Li Alloys for Improved Weldability, Repairability, and Reduction of Residual Stresses

NASA Technical Reports Server (NTRS)

Malone, Tina W.; Graham, Benny F.; Gentz, Steven J. (Technical Monitor)

2001-01-01

Service performance has shown that cryogenic treatment of some metals provides improved strength, fatigue life, and wear resistance to the processed material. Effects such as these were initially discovered by NASA engineers while evaluating spacecraft that had returned from the cold vacuum of space. Factors such as high cost, poor repairability, and poor machinability are currently prohibitive for wide range use of some aerospace aluminum alloys. Application of a cryogenic treatment process to these alloys is expected provide improvements in weldability and weld properties coupled with a reduction in repairs resulting in a significant reduction in the cost to manufacture and life cycle cost of aerospace hardware. The primary purpose of this effort was to evaluate the effects of deep cryogenic treatment of some aluminum alloy plate products, welds, and weld repairs, and optimize a process for the treatment of these materials. The optimized process is being evaluated for improvements in properties of plate and welds, improvements in weldability and repairability of treated materials, and as an alternative technique for the reduction of residual stresses in repaired welds. This paper will present the results of testing and evaluation conducted in this effort. These results will include assessments of changes in strength, toughness, stress corrosion susceptability, weldability, repairability, and reduction in residual stresses of repaired welds.

Optimal Cooling of High Purity Germanium Spectrometers for Missions to Planets and Moons

NASA Astrophysics Data System (ADS)

Chernenko, A.; Kostenko, V.; Konev, S.; Rybkin, B.; Paschin, A.; Prokopenko, I.

2004-04-01

Gamma-ray spectrometers based on high purity germanium (HPGe) detectors are ultimately sensitive instruments for composition studies of surfaces of planets and moons. However, they require deep cooling well below 120K for the entire duration of space mission, and this challenges the feasibility of such instruments in the era of small and cost-efficient missions. In this paper we summarise our experience in the field of the theoretical and experimental studies of optimal cryogenic cooling of gamma-ray spectrometers based on HPGe detectors in order to find out how efficient, light and compact these instruments could be, provided such technologies like cryogenic heat pipe diodes (HPDs), efficient thermal insulation and efficient miniature cryocoolers are used.

Sorption compressor/mechanical expander hybrid refrigeration

NASA Technical Reports Server (NTRS)

Jones, J. A.; Britcliffe, M.

1987-01-01

Experience with Deep Space Network (DSN) ground-based cryogenic refrigerators has proved the reliability of the basic two-stage Gifford-McMahon helium refrigerator. A very long life cryogenic refrigeration system appears possible by combining this expansion system or a turbo expansion system with a hydride sorption compressor in place of the usual motor driven piston compressor. To test the feasibility of this system, a commercial Gifford-McMahon refrigerator was tested using hydrogen gas as the working fluid. Although no attempt was made to optimize the system for hydrogen operation, the refrigerator developed 1.3 W at 30 K and 6.6 W at 60 K. The results of the test and of theoretical performances of the hybrid compressor coupled to these expansion systems are presented.

Spitzer Operations: Scheduling the Out Years

NASA Technical Reports Server (NTRS)

Mahoney, William A.; Effertz, Mark J.; Fisher, Mark E.; Garcia, Lisa J.; Hunt, Joseph C. Jr.; Mannings, Vincent; McElroy, Douglas B.; Scire, Elena

2012-01-01

Spitzer Warm Mission operations have remained robust and exceptionally efficient since the cryogenic mission ended in mid-2009. The distance to the now exceeds 1 AU, making telecommunications increasingly difficult; however, analysis has shown that two-way communication could be maintained through at least 2017 with minimal loss in observing efficiency. The science program continues to emphasize the characterization of exoplanets, time domain studies, and deep surveys, all of which can impose interesting scheduling constraints. Recent changes have significantly improved on-board data compression, which both enables certain high volume observations and reduces Spitzer's demand for competitive Deep Space Network resources.

Optimization of surface morphology and scattering properties of TCO/AIT textured glass front electrode for thin film solar cells

NASA Astrophysics Data System (ADS)

Addonizio, M. L.; Fusco, L.; Antonaia, A.; Cominale, F.; Usatii, I.

2015-12-01

Aluminium induced texture (AIT) method has been used for obtaining highly textured glass substrate suitable for silicon based thin film solar cell technology. Wet etch step parameters of AIT process have been varied and effect of different etchants and different etching times on morphological and optical properties has been analyzed. The resulting morphology features (shape, size distribution, inclination angle) have been optimized in order to obtain the best scattering properties. ZnO:Ga (GZO) films have been deposited by sputtering technique on AIT-processed glass. Two different ZnO surface morphologies have been obtained, strongly depending on the underlying glass substrate morphology induced by different etching times. Very rough and porous texture (σrms ∼ 150 nm) was obtained on glass etched 2 min showing cauliflower-like structure, whereas a softer texture (σrms ∼ 78 nm) was obtained on glass etched 7 min giving wider and smoother U-shaped craters. The effect of different glass textures on optical confinement has been tested in amorphous silicon based p-i-n devices. Devices fabricated on GZO/high textured glass showed a quantum efficiency enhancement due to both an effective light trapping phenomenon and an effective anti-reflective optical behaviour. Short etching time produce smaller cavities (<1 μm) with deep U-shape characterized by high roughness, high inclination angle and low autocorrelation length. This surface morphology promoted a large light scattering phenomenon, as evidenced by haze value and by angular resolved scattering (ARS) behaviour, into a large range of diffraction angles, giving high probability of effective light trapping inside a PV device.

Simultaneous fabrication of very high aspect ratio positive nano- to milliscale structures.

PubMed

Chen, Long Qing; Chan-Park, Mary B; Zhang, Qing; Chen, Peng; Li, Chang Ming; Li, Sai

2009-05-01

A simple and inexpensive technique for the simultaneous fabrication of positive (i.e., protruding), very high aspect (>10) ratio nanostructures together with micro- or millistructures is developed. The method involves using residual patterns of thin-film over-etching (RPTO) to produce sub-micro-/nanoscale features. The residual thin-film nanopattern is used as an etching mask for Si deep reactive ion etching. The etched Si structures are further reduced in size by Si thermal oxidation to produce amorphous SiO(2), which is subsequently etched away by HF. Two arrays of positive Si nanowalls are demonstrated with this combined RPTO-SiO(2)-HF technique. One array has a feature size of 150 nm and an aspect ratio of 26.7 and another has a feature size of 50 nm and an aspect ratio of 15. No other parallel reduction technique can achieve such a very high aspect ratio for 50-nm-wide nanowalls. As a demonstration of the technique to simultaneously achieve nano- and milliscale features, a simple Si nanofluidic master mold with positive features with dimensions varying continuously from 1 mm to 200 nm and a highest aspect ratio of 6.75 is fabricated; the narrow 200-nm section is 4.5 mm long. This Si master mold is then used as a mold for UV embossing. The embossed open channels are then closed by a cover with glue bonding. A high aspect ratio is necessary to produce unblocked closed channels after the cover bonding process of the nanofluidic chip. The combined method of RPTO, Si thermal oxidation, and HF etching can be used to make complex nanofluidic systems and nano-/micro-/millistructures for diverse applications.

Microshear bond strength of resin composite to teeth affected by molar hypomineralization using 2 adhesive systems.

PubMed

William, Vanessa; Burrow, Michael F; Palamara, Joseph E A; Messer, Louise B

2006-01-01

When restoring hypomineralized first permanent molars, placement of cavo-surface margins can be difficult to ascertain due to uncertainty of the bonding capability of the tooth surface. The purpose of this study was to investigate the adhesion of resin composite bonded to control and hypomineralized enamel with an all-etch single-bottle adhesive or self-etching primer adhesive. Specimens of control enamel (N=44) and hypomineralized enamel (N=45) had a 0.975-mm diameter composite rod (Filtek Supreme Universal Restorative) bonded with either 3M ESPE Single Bond or Clearfil SE Bond following manufacturers' instructions. Specimens were stressed in shear at 1 mm/min to failure (microshear bond strength). Etched enamel surfaces and enamel-adhesive interfaces were examined under scanning electron microscopy. The microshear bond strength (MPa) of resin composite bonded to hypomineralized enamel was significantly lower than for control enamel (3M ESPE Single Bond=7.08 +/- 4.90 vs 16.27 +/- 10.04; Clearfil SE Bond=10.39 +/- 7.56 vs 19.63 +/- 7.42; P=.001). Fractures were predominantly adhesive in control enamel and cohesive in hypomineralized enamel. Scotchbond etchant produced deep interprismatic and intercrystal porosity in control enamel and shallow etch patterns with minimal intercrystal porosity in hypomineralized enamel. Control enamel appeared almost unaffected by SE Primer; hypomineralized enamel showed shallow etching. The hypomineralized enamel-adhesive interface was porous with cracks in the enamel. The control enamel-adhesive interface displayed a hybrid layer of even thickness. The microshear bond strength of resin composite bonded to hypomineralized enamel was significantly lower than for control enamel. This was supported by differences seen in etch patterns and at the enamel-adhesive interface.

[Brushing abrasion of the enamel surface after erosion].

PubMed

Lipei, Chen; Xiangke, Ci; Xiaoyan, Ou

2017-08-01

Objective A study was conducted to compare the effect of different enamel remineralization periods after erosion on the depth of brushing abrasion. Methods Ten volunteers were selected for a 4-day experiment. A total of 60 enamels were randomly assigned into six groups (A-F) and placed in intraoral palatal devices. On the first day, the palatal devices were placed in oral cavity (24 h) . On the following three days, brushing experiments were performed extraorally, two times per day. The specific experimental method of brushing follows these next steps. First, the group F specimens were covered with a film of wax, and then acid etched for 2 min. Subsequently, the film of wax was detached. The groups from A to D were brushed after remineralization at the following time intervals: group A, 0 min; group B, 20 min; group C, 40 min; group D, 60 min. Erosion and remineralization were performed on group E, but without brushing. Remineralization was performed on group F, but without acid etching and brushing. The depth of enamel abrasion was determined by a mechanical profilometer. The surface morphology of the enamel blocks was observed using a scanning electron microscope. Results 1) The depth of abrasion was different in varied enamel remineralization time after acid etching. The statistical significant differences between groups were as follows. 2) When the time of enamel remineralization after acid etching was short, the surface depression in the electron microscope was deep, and the surface morphology was rough. Conclusion Brushing immediately after acid etching would cause much serious abrasion to the enamel surface. Brushing after 60 min can effectively reduce the abrasion of acid etching enamel.

Surface micro-structuring of silicon by excimer-laser irradiation in reactive atmospheres

NASA Astrophysics Data System (ADS)

Pedraza, A. J.; Fowlkes, J. D.; Jesse, S.; Mao, C.; Lowndes, D. H.

2000-12-01

The formation mechanisms of cones and columns by pulsed-laser irradiation in reactive atmospheres were studied using scanning electron microscopy and profilometry. Deep etching takes place in SF6- and O2- rich atmospheres and consequently, silicon-containing molecules and clusters are released. Transport of silicon from the etched/ablated regions to the tip of columns and cones and to the side of the cones is required because both structures, columns and cones, protrude above the initial surface. The laser-induced micro-structure is influenced not only by the nature but also by the partial pressure of the reactive gas in the atmosphere. Irradiation in Ar following cone formation in SF6 produced no additional growth but rather melting and resolidification. Subsequent irradiation using again a SF6 atmosphere lead to cone restructuring and growth resumption. Thus the effects of etching plus re-deposition that produce column/cone formation and growth are clearly separated from the effects of just melting. On the other hand, irradiation continued in air after first performed in SF6 resulted in: (a) an intense etching of the cones and a tendency to transform them into columns; (b) growth of new columns on top of the existing cones and (c) filamentary nano-structures coating the sides of the columns and cones.

Simple fabrication of antireflective silicon subwavelength structure with self-cleaning properties.

PubMed

Kim, Bo-Soon; Ju, Won-Ki; Lee, Min-Woo; Lee, Cheon; Lee, Seung-Gol; Beom-Hoan, O

2013-05-01

A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal annealing of a thin metallic film enables the creation of metal nano particles by isolating them from each other by means of the self-aggregation of the metal. After annealing, the samples were soaked in an aqueous etching solution of hydrofluoric acid and hydrogen peroxide. When silicon (Si) was etched for 2 minutes using the Au nano particles, the reflectance was decreased almost 0% over the entire wavelength range from 300 to 1300 nm due to its deep and steeply double tapered structure. When given varying incident angle degrees from 30 degrees to 60 degrees, the reflectance was also maintained at less than 3%. Following this, the etched silicon was treated with a plasma-polymerized fluorocarbon (PPFC) film of about 5 nm using an ICP reactor for surface modification. The result of this surface treatment, the contact angle increased significantly from 27.5 degrees to 139.3 degrees. The surface modification was successful and maintained almost 0% reflectance because of the thin film deposition.

Deep Space Network, Cryogenic HEMT LNAs

NASA Technical Reports Server (NTRS)

Bautista, J. Javier

2006-01-01

Exploration of the Solar System with automated spacecraft that are more than ten astronomical units (1 AU = 149,597,870.691 km) from earth requires very large antennae employing extremely sensitive receivers. A key figure of merit in the specification of the spacecraft-to-earth telecommunications link is the ratio of the antenna gain to operatio nal noise temperature (G/Top) of the system. The Deep Space Network (DSN) receivers are cryogenic, low-noise amplifiers (LNAs) which addres s the need to maintain Top as low as technology permits. Historicall y, the extra-ordinarily sensitive receive systems operated by the DSN have required ctyogenically cooled, ruby masers, operating at a physi cal temperature near the boiling point of helium, as the LNA. Althoug h masers continue to be used today, they are hand crafted at JPL and expensive to manufacture and maintain. Recent advances in the developm ent of indium phosphide (InP) based high electron mobility transistor s (HEMTs) combined with cryogenic cooling near the boiling point of h ydrogen have made this alternate technology comparable with and a fraction of the cost of maser technology. InP HEMT LNA modules are demons trating noise temperatures less than ten times the quantum noise limi t (10hf/k) from 1 to 100 GHz. To date, the lowest noise LNA modules developed for the DSN have demonstrated noise temperatures of 3.5 K and 8.5 K at 8.5 K at 32 GHz, respectively. Front-end receiver packages employing these modules have demonstrated operating system noise temperatures of 17 K at 8.4 GHz (on a 70m antenna at zenith) and 39 K at 3 2 GHz (on a 34m antenna at zenith). The development and demonstration of cryogenic, InP HEMT based front-end amplifiers for the DSN requir es accurate component and module characterization, and modeling from 1 to 100 GHz at physical temperatures down to 12 K. The characterizati on and modeling begins with the HEMT chip, proceeds to the multi-stag e HEMT LNA module, and culminates with the complete front-end cryogenic receiver package for the antenna. This presentation will provide a n overview of this development process. Examples will be shown for de vices, LNA modules, front-end receiver packages, antennae employing these packages and the improvements to the down-link capacity.

CUORE: The Three Towers Test

NASA Astrophysics Data System (ADS)

Goodsell, Alison; Sparks, Laura

2008-10-01

CUORE (Cryogenic Underground Observatory for Rare Events) will be part of the next generation of detectors used to search for neutrinoless double beta decay (0νββ). Located in Assergi, Italy at the Gran Sasso National Laboratory (LNGS), CUORE will be a large cryogenic bolometer composed of 988 tellurium dioxide (TeO2) detectors with a total mass of 750 kg, and will search for 0νββ in ^130Te. The intermediate upgrade, CUORE-0, first involves the disassembly of Cuoricino, CUORE's smaller counterpart in operation since 2003, and the readying of the Three Towers test, a diagnostic detector configuration. As the experiment will monitor the extremely rare event of 0νββ, all factors contributing to background need to be minimized to effectively increase the sensitivity. We assisted the LNGS researchers over the summer of 2008 by supporting R&D work with the Three Towers test to reduce the radioactive background of the experiment. Activities involved decontaminating the copper frame of radon daughters, and chemically etching and lapping the TeO2 crystals with nitric acid and silicon dioxide, respectively, to remove surface contaminants which contribute to background counts. This work was supported in part by NSF grant PHY- 0653284 and the California State Faculty Support Grant.

Survey of Constellation-Era LOX/Methane Development Activities and Future Development Needs

NASA Technical Reports Server (NTRS)

Marshall, William M.; Stiegemeier, Benjamin; Greene, Sandra Elam; Hurlbert, Eric A.

2017-01-01

NASA formed the Constellation Program in 2005 to achieve the objectives of maintaining American presence in low-Earth orbit, returning to the moon for purposes of establishing an outpost, and laying the foundation to explore Mars and beyond in the first half of the 21st century. The Exploration Technology Development Program (ETDP) was formulated to address the technology needs to address Constellation architecture decisions. The Propellants and Cryogenic Advanced Development (PCAD) project was tasked with risk mitigation of specific propulsion related technologies to support ETDP. Propulsion systems were identified as critical technologies owing to the high gear-ratio of lunar Mars landers Cryogenic propellants offer performance advantage over storables (NTOMMH) Mass savings translate to greater payload capacity In-situ production of propellant an attractive feature; methane and oxygen identified as possible Martian in-situ propellants New technologies were required to meet more difficult missions High performance LOX/LH2 deep throttle descent engines High performance LOX/LCH4 ascent main and reaction control system (RCS) engines The PCAD project sought to provide those technologies through Reliable ignition pulse RCS Fast start High efficiency engines Stable deep throttling.

NASA Hardware Heads to Kennedy For Flight Preparations

NASA Image and Video Library

2018-01-24

The Orion stage adapter will be part of the first integrated flight of NASA's heavy-lift rocket, the Space Launch System, and the Orion spacecraft. The adapter, approximately 5 feet tall and 18 feet in diameter, was designed and built at NASA's Marshall Space Flight Center in Huntsville, Alabama, with advanced friction stir welding technology. It will connect the SLS interim cryogenic propulsion stage to Orion on the first flight that will help engineers check out and verify the agency's new deep-space exploration systems. Inside the adapter, engineers installed special brackets and cabling for the 13 CubeSats that will fly as secondary payloads. The Cubesats are boot-box-sized science and technology investigations that will help pave the way for future human exploration in deep space. The Orion stage adapter flight article recently finished major testing of the avionics system that will deploy the CubeSats. Technicians at NASA's Kennedy Space Center, Florida, will install the secondary payloads and engineers will examine the hardware before it is stacked on the interim cryogenic propulsion stage in the Vehicle Assembly Building prior to launch. For more information about SLS hardware, visit nasa.gov/sls.

Modernization of NASA's Johnson Space Center Chamber: A Payload Transport Rail System to Support Cryogenic Vacuum Optical Testing of the James Webb Space Telescope (JWST)

NASA Technical Reports Server (NTRS)

Garcia, Sam; Homan, Jonathan; Speed, John

2016-01-01

NASA is the mission lead for the James Webb Space Telescope (JWST), the next of the "Great Observatories", scheduled for launch in 2018. It is directly responsible for the integration and test (I&T) program that will culminate in an end-to-end cryo vacuum optical test of the flight telescope and instrument module in Chamber A at NASA Johnson Space Center. Historic Chamber A is the largest thermal vacuum chamber at Johnson Space Center and one of the largest space simulation chambers in the world. Chamber A has undergone a major modernization effort to support the deep cryogenic, vacuum and cleanliness requirements for testing the JWST. This paper describe the challenges of developing, integrating and modifying new payload rails capable of transporting payloads within the thermal vacuum chamber up to 65,000 pounds. Ambient and Cryogenic Operations required to configure for testing will be explained. Lastly review historical payload configurations stretching from the Apollo program era to current James Webb Space Telescope testing.

Heat treated twin wire arc spray AISI 420 coatings under dry and wet abrasive wear

NASA Astrophysics Data System (ADS)

Rodriguez, E.; González, M. A.; Monjardín, H. R.; Jimenez, O.; Flores, M.; Ibarra, J.

2017-11-01

The influence of applying two different heat treatments such as: deep cryogenic and tempering on dry/wet abrasive wear resistance of twin wire arc spray martensitic AISI 420 coatings was evaluated by using a modified rubber wheel type test apparatus. A load dependency was observed on the abrasive wear rate behavior of both; dry and wet tests. Three body (rolling) and two body (sliding) wear mechanisms were identified in dry conditions, prevailing rolling at lower and higher loads. However, at higher loads, more presence of grooving and pits formation was observed. Coatings tempered at 205 °C/1 h displayed better wear resistance than cryogenic treated ones. A change in wear mechanism between dry and wet conditions was observed; two body wear mechanism predominated respect to three body. In both; dry and wet conditions the microstructure (several inter-splat oxides) as well as strain and residual stress promotes brittle material removal which was more evident in cryogenic and as-sprayed samples during dry test and at higher loads in wet conditions.

Model-based correction for local stress-induced overlay errors

NASA Astrophysics Data System (ADS)

Stobert, Ian; Krishnamurthy, Subramanian; Shi, Hongbo; Stiffler, Scott

2018-03-01

Manufacturing embedded DRAM deep trench capacitors can involve etching very deep holes into silicon wafers1. Due to various design constraints, these holes may not be uniformly distributed across the wafer surface. Some wafer processing steps for these trenches results in stress effects which can distort the silicon wafer in a manner that creates localized alignment issues between the trenches and the structures built above them on the wafer. In this paper, we describe a method to model these localized silicon distortions for complex layouts involving billions of deep trench structures. We describe wafer metrology techniques and data which have been used to verify the stress distortion model accuracy. We also provide a description of how this kind of model can be used to manipulate the polygons in the mask tape out flow to compensate for predicted localized misalignments between design shapes from a deep trench mask and subsequent masks.

Hybrid Metamaterials for Solar Biofuel Generation

DTIC Science & Technology

2014-10-30

challenging, and their production is environmentally damaging .7 For these reasons, they are unlikely to find commercial application. Artificial proteins...transfer in natural systems has led to an empirical expression known as the Moser-Dutton ruler, further modified by Crofts and Rose37 which describes...photolithography (the deep UV photolithography system at the CNF). Reactive ion etching will be used with a polymerization component Project

Low Noise Interband Cascade Photodetectors

DTIC Science & Technology

2012-02-28

the interband tunneling channel. These ICIP wafers were processed into deep-etched photodetectors with mesas ranging from 110 to 400 m in...86, 233106 (2005). 10. J. B. Rodriguez , E. Plis, G. Bishop, Y. D. Sharma, H. Kim, L. R. Dawson, and S. Krishna, “nBn structure based on InAs/GaSb type-II strained layer superlattices”, Appl. Phys. Lett. 91, 043514 (2007).

One-step partial or complete caries removal and bonding with antibacterial or traditional self-etch adhesives: study protocol for a randomized controlled trial.

PubMed

Villat, Cyril; Attal, Jean-Pierre; Brulat, Nathalie; Decup, Franck; Doméjean, Sophie; Dursun, Elisabeth; Fron-Chabouis, Hélène; Jacquot, Bruno; Muller Bolla, Michèle; Plasse-Pradelle, Nelly; Roche, Laurent; Maucort-Boulch, Delphine; Nony, Patrice; Gritsch, Kerstin; Millet, Pierre; Gueyffier, François; Grosgogeat, Brigitte

2016-08-15

Current concepts in conservative dentistry advocate minimally invasive dentistry and pulp vitality preservation. Moreover, complete removal of carious dentin in deep carious lesions often leads to pulp exposure and root canal treatment, despite the absence of irreversible pulp inflammation. For years, partial caries removal has been performed on primary teeth, but little evidence supports its effectiveness for permanent teeth. Furthermore, the recent development of new antibacterial adhesive systems could be interesting in the treatment of such lesions. The objectives of this study are to compare the effectiveness of partial versus complete carious dentin removal in deep lesions (primary objective) and the use of an antibacterial versus a traditional two-step self-etch adhesive system (main secondary objective). The DEep CAries Treatment (DECAT) study protocol is a multicenter, randomized, controlled superiority trial comparing partial versus complete caries removal followed by adhesive restoration. The minimum sample size required is 464 patients. Two successive randomizations will be performed (allocation ratio 1:1): the first for the type of excavation (partial versus complete) and the second (if no root canal treatment is required) for the type of adhesive (antibacterial versus traditional). For the two objectives, the outcome is the success of the treatment after 1 year, measured according to a composite outcome of five FDI criteria: material fracture and retention, marginal adaptation, radiographic examination (including apical pathologies), postoperative sensitivity and tooth vitality, and carious lesion recurrence. The study will investigate the interest of a conservative approach for the management of deep carious lesions in terms of dentin excavation and bioactive adhesive systems. The results may help practitioners achieve the most efficient restorative procedure to maintain pulp vitality and increase the restoration longevity. ClinicalTrials.gov Identifier NCT02286388 . Registered in November 2014.

Vascular stents with submicrometer-scale surface patterning realized via titanium deep reactive ion etching

NASA Astrophysics Data System (ADS)

Gott, Shannon C.; Jabola, Benjamin A.; Rao, Masaru P.

2015-08-01

Herein, we report progress towards realization of vascular stents that will eventually provide opportunity for evaluating cellular response to rationally-designed, submicrometer-scale surface patterning in physiologically-relevant contexts, i.e. those that provide exposure to the complex multicellular milieu, flow-induced shear, and tissue-device interactions present in vivo. Specifically, using our novel titanium deep reactive ion etching technique (Ti DRIE), we discuss recent advances that have enabled: (a) fabrication of precisely-defined, grating-based surface patterns on planar Ti foils with minimum feature sizes as small as 0.15 μm (b) creation of cylindrical stents from micromachined planar Ti foils; and (c) integration of these processes to produce the first submicrometer-scale surface-patterned Ti stents that are compatible with conventional balloon catheter deployment techniques. We also discuss results from elastoplastic finite element simulations and preliminary mechanical testing of these devices to assess their mechanical performance. These efforts represent key steps towards our long-term goal of developing a new paradigm in stenting, where rationally-designed surface patterning provides a physical means for facilitating healing, and thus, improving outcomes in vascular intervention applications.

MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

NASA Astrophysics Data System (ADS)

Wasisto, Hutomo Suryo; Merzsch, Stephan; Waag, Andreas; Peiner, Erwin

2013-05-01

The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 +/- 0.04 kHz and a quality factor of 1302 +/- 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

Formation of metal and dielectric liners using a solution process for deep trench capacitors.

PubMed

Ham, Yong-Hyun; Kim, Dong-Pyo; Baek, Kyu-Ha; Park, Kun-Sik; Kim, Moonkeun; Kwon, Kwang-Ho; Shin, Hong-Sik; Lee, Kijun; Do, Lee-Mi

2012-07-01

We demonstrated the feasibility of metal and dielectric liners using a solution process for deep trench capacitor application. The deep Si trench via with size of 10.3 microm and depth of 71 microm were fabricated by Bosch process in deep reactive ion etch (DRIE) system. The aspect ratio was about 7. Then, nano-Ag ink and poly(4-vinylphenol) (PVPh) were used to form metal and dielectric liners, respectively. The thicknesses of the Ag and PVPh liners were about 144 and 830 nm, respectively. When the curing temperature of Ag film increased from 120 to 150 degrees C, the sheet resistance decreased rapidly from 2.47 to 0.72 Omega/sq and then slightly decreased to 0.6 Omega/sq with further increasing the curing temperature beyond 150 degrees C. The proposed liner formation method using solution process is a simple and cost effective process for the high capacity of deep trench capacitor.

Performance of High-Speed PWM Control Chips at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.; Gerber, Scott; Hammoud, Ahmad; Patterson, Richard; Overton, Eric

2001-01-01

The operation of power electronic systems at cryogenic temperatures is anticipated in many NASA space missions such as planetary exploration and deep space probes. In addition to surviving the space hostile environment, electronics capable of low temperature operation would contribute to improving circuit performance, increasing system efficiency, and reducing development and launch costs. As part of the NASA Glenn Low Temperature Electronics Program, several commercial high-speed Pulse Width Modulation (PWM) chips have been characterized in terms of their performance as a function of temperature in the range of 25 to -196 C (liquid nitrogen). These chips ranged in their electrical characteristics, modes of control, packaging options, and applications. The experimental procedures along with the experimental data obtained on the investigated chips are presented and discussed.

An Easy to Manufacture Micro Gas Preconcentrator for Chemical Sensing Applications.

PubMed

McCartney, Mitchell M; Zrodnikov, Yuriy; Fung, Alexander G; LeVasseur, Michael K; Pedersen, Josephine M; Zamuruyev, Konstantin O; Aksenov, Alexander A; Kenyon, Nicholas J; Davis, Cristina E

2017-08-25

We have developed a simple-to-manufacture microfabricated gas preconcentrator for MEMS-based chemical sensing applications. Cavities and microfluidic channels were created using a wet etch process with hydrofluoric acid, portions of which can be performed outside of a cleanroom, instead of the more common deep reactive ion etch process. The integrated heater and resistance temperature detectors (RTDs) were created with a photolithography-free technique enabled by laser etching. With only 28 V DC (0.1 A), a maximum heating rate of 17.6 °C/s was observed. Adsorption and desorption flow parameters were optimized to be 90 SCCM and 25 SCCM, respectively, for a multicomponent gas mixture. Under testing conditions using Tenax TA sorbent, the device was capable of measuring analytes down to 22 ppb with only a 2 min sample loading time using a gas chromatograph with a flame ionization detector. Two separate devices were compared by measuring the same chemical mixture; both devices yielded similar peak areas and widths (fwhm: 0.032-0.033 min), suggesting reproducibility between devices.

Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography

NASA Astrophysics Data System (ADS)

Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan

2017-11-01

It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.

Deep-etched sinusoidal polarizing beam splitter grating.

PubMed

Feng, Jijun; Zhou, Changhe; Cao, Hongchao; Lv, Peng

2010-04-01

A sinusoidal-shaped fused-silica grating as a highly efficient polarizing beam splitter (PBS) is investigated based on the simplified modal method. The grating structure depends mainly on the ratio of groove depth to grating period and the ratio of incident wavelength to grating period. These ratios can be used as a guideline for the grating design at different wavelengths. A sinusoidal-groove PBS grating is designed at a wavelength of 1310 nm under Littrow mounting, and the transmitted TM and TE polarized waves are mainly diffracted into the zeroth order and the -1st order, respectively. The grating profile is optimized by using rigorous coupled-wave analysis. The designed PBS grating is highly efficient (>95.98%) over the O-band wavelength range (1260-1360 nm) for both TE and TM polarizations. The sinusoidal grating can exhibit higher diffraction efficiency, larger extinction ratio, and less reflection loss than the rectangular-groove PBS grating. By applying wet etching technology on the rectangular grating, which was manufactured by holographic recording and inductively coupled plasma etching technology, the sinusoidal grating can be approximately fabricated. Experimental results are in agreement with theoretical values.

Selective hierarchical patterning of silicon nanostructures via soft nanostencil lithography.

PubMed

Du, Ke; Ding, Junjun; Wathuthanthri, Ishan; Choi, Chang-Hwan

2017-11-17

It is challenging to hierarchically pattern high-aspect-ratio nanostructures on microstructures using conventional lithographic techniques, where photoresist (PR) film is not able to uniformly cover on the microstructures as the aspect ratio increases. Such non-uniformity causes poor definition of nanopatterns over the microstructures. Nanostencil lithography can provide an alternative means to hierarchically construct nanostructures on microstructures via direct deposition or plasma etching through a free-standing nanoporous membrane. In this work, we demonstrate the multiscale hierarchical fabrication of high-aspect-ratio nanostructures on microstructures of silicon using a free-standing nanostencil, which is a nanoporous membrane consisting of metal (Cr), PR, and anti-reflective coating. The nanostencil membrane is used as a deposition mask to define Cr nanodot patterns on the predefined silicon microstructures. Then, deep reactive ion etching is used to hierarchically create nanostructures on the microstructures using the Cr nanodots as an etch mask. With simple modification of the main fabrication processes, high-aspect-ratio nanopillars are selectively defined only on top of the microstructures, on bottom, or on both top and bottom.

Development of a high-yield via-last through silicon via process using notchless silicon etching and wet cleaning of the first metal layer

NASA Astrophysics Data System (ADS)

Watanabe, Naoya; Kikuchi, Hidekazu; Yanagisawa, Azusa; Shimamoto, Haruo; Kikuchi, Katsuya; Aoyagi, Masahiro; Nakamura, Akio

2017-07-01

A high-yield via-last through silicon via (TSV) process has been developed using notchless Si etching and wet cleaning of the first metal layer. In this process, the notching was suppressed by optimizing the deep Si etching conditions and wet cleaning was performed using an organic alkaline solution to remove reaction products generated by the etchback step on the first metal layer. By this process, a number of small TSVs (TSV diameter: 6 µm TSV depth: 22 µm number of TSVs: 20,000/chip) could be formed uniformly on an 8-in. wafer. The electrical characteristics of small TSVs formed by this via-last TSV process were investigated. The TSV resistance determined by four-terminal measurements was approximately 24 mΩ. The leakage current between the TSV and the Si substrate was 2.5 pA at 5 V. The TSV capacitance determined using an inductance-capacitance-resistance (LCR) meter was 54 fF, while the TSV yield determined from TSV chain measurements was high (83%) over an 8-in. wafer.

Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

NASA Technical Reports Server (NTRS)

Jung-Kubiak, Cecile; Reck, Theodore J.; Lin, Robert H.; Peralta, Alejandro; Gill, John J.; Lee, Choonsup; Siles, Jose; Toda, Risaku; Chattopadhyay, Goutam; Cooper, Ken B.;

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kokkoris, George; Boudouvis, Andreas G.; Gogolides, Evangelos

An integrated framework for the neutral flux calculation inside trenches and holes during plasma etching is described, and a comparison between the two types of structure in a number of applications is presented. First, a detailed and functional set of equations for the neutral and ion flux calculations inside long trenches and holes with cylindrical symmetry is explicitly formulated. This set is based on early works [T. S. Cale and G. B. Raupp, J. Vac. Sci. Technol. B 8, 1242 (1990); V. K. Singh et al., J. Vac. Sci. Technol. B 10, 1091 (1992)], and includes new equations for themore » case of holes with cylindrical symmetry. Second, a method for the solution of the respective numerical task, i.e., one or a set of linear or nonlinear integral equations, is described. This method includes a coupling algorithm with a surface chemistry model and resolves the singularity problem of the integral equations. Third, the fluxes inside trenches and holes are compared. The flux from reemission is the major portion of the local flux at the bottom of both types of structure. The framework is applied in SiO{sub 2} etching by fluorocarbon plasmas to predict the increased intensity of reactive ion etching lag in SiO{sub 2} holes compared to trenches. It is also applied in deep Si etching: By calculating the flux of F atoms at the bottom of very high aspect ratio (up to 150) Si trenches and holes during the gas chopping process, the aspect ratio at which the flux of F atoms is eliminated and etching practically stops is estimated.« less

VUV lithography

DOEpatents

George, Edward V.; Oster, Yale; Mundinger, David C.

1990-01-01

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1700-1300A using xenon, krypton or argon; shorter wavelengths of 850-650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask.

Gallium nitride heterostructures on 3D structured silicon.

PubMed

Fündling, Sönke; Sökmen, Unsal; Peiner, Erwin; Weimann, Thomas; Hinze, Peter; Jahn, Uwe; Trampert, Achim; Riechert, Henning; Bakin, Andrey; Wehmann, Hergo-Heinrich; Waag, Andreas

2008-10-08

We investigated GaN-based heterostructures grown on three-dimensionally patterned Si(111) substrates by metal organic vapour phase epitaxy, with the goal of fabricating well controlled high quality, defect reduced GaN-based nanoLEDs. The high aspect ratios of such pillars minimize the influence of the lattice mismatched substrate and improve the material quality. In contrast to other approaches, we employed deep etched silicon substrates to achieve a controlled pillar growth. For that a special low temperature inductively coupled plasma etching process has been developed. InGaN/GaN multi-quantum-well structures have been incorporated into the pillars. We found a pronounced dependence of the morphology of the GaN structures on the size and pitch of the pillars. Spatially resolved optical properties of the structures are analysed by cathodoluminescence.

Long-Baseline Neutrino Facility (LBNF) and Deep Underground Neutrino Experiment (DUNE): Conceptual Design Report. Volume 3: Long-Baseline Neutrino Facility for DUNE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strait, James; McCluskey, Elaine; Lundin, Tracy

2016-01-21

This volume of the LBNF/DUNE Conceptual Design Report covers the Long-Baseline Neutrino Facility for DUNE and describes the LBNF Project, which includes design and construction of the beamline at Fermilab, the conventional facilities at both Fermilab and SURF, and the cryostat and cryogenics infrastructure required for the DUNE far detector.

Design and Fabrication of the Second-Generation KID-Based Light Detectors of CALDER

NASA Astrophysics Data System (ADS)

Colantoni, I.; Cardani, L.; Casali, N.; Cruciani, A.; Bellini, F.; Castellano, M. G.; Cosmelli, C.; D'Addabbo, A.; Di Domizio, S.; Martinez, M.; Tomei, C.; Vignati, M.

2018-04-01

The goal of the cryogenic wide-area light detectors with excellent resolution project is the development of light detectors with large active area and noise energy resolution smaller than 20 eV RMS using phonon-mediated kinetic inductance detectors (KIDs). The detectors are developed to improve the background suppression in large-mass bolometric experiments such as CUORE, via the double readout of the light and the heat released by particles interacting in the bolometers. In this work we present the fabrication process, starting from the silicon wafer arriving to the single chip. In the first part of the project, we designed and fabricated KID detectors using aluminum. Detectors are designed by means of state-of-the-art software for electromagnetic analysis (SONNET). The Al thin films (40 nm) are evaporated on high-quality, high-resistivity (> 10 kΩ cm) Si(100) substrates using an electron beam evaporator in a HV chamber. Detectors are patterned in direct-write mode, using electron beam lithography (EBL), positive tone resist poly-methyl methacrylate and lift-off process. Finally, the chip is diced into 20 × 20 mm2 chips and assembled in a holder OFHC (oxygen-free high conductivity) copper using PTFE support. To increase the energy resolution of our detectors, we are changing the superconductor to sub-stoichiometric TiN (TiN x ) deposited by means of DC magnetron sputtering. We are optimizing its deposition by means of DC magnetron reactive sputtering. For this kind of material, the fabrication process is subtractive and consists of EBL patterning through negative tone resist AR-N 7700 and deep reactive ion etching. Critical temperature of TiN x samples was measured in a dedicated cryostat.

A novel approach to the use of doxycycline-loaded biodegradable membrane and EDTA root surface etching in chronic periodontitis: a randomized clinical trial.

PubMed

Gamal, Ahmed Y; Kumper, Radi M

2012-09-01

The release profile of 25% doxycycline (DOX) gel loaded on a biodegradable collagen membrane (COL) after 24% EDTA root surface etching was evaluated. Thirty systemically healthy patients, each with at least one pair of contralateral interproximal intrabony defects ≥4 mm deep, along with an interproximal probing depth ≥6 mm and clinical attachment loss ≥4 mm, were randomized into two groups. Group 1 consisted of sites treated with open-flap debridement followed by placement of DOX gel-loaded COL (DOX-COL), whereas group 2 sites were treated with flap surgery followed by the placement of DOX-COL after EDTA etching of the exposed root surfaces (DOX-COL + EDTA). Samples of gingival crevicular fluid were obtained 1, 3, 7, 14, and 21 days after surgery. Separation was performed, and quantitative measurements of DOX were taken with a high-performance liquid chromatography. Clinical evaluation and follow-up for 6 months were performed. At 21 days, DOX-COL + EDTA group showed 5.3 μg/mL value. However, no DOX was detected in samples of the DOX-COL group. DOX-COL + EDTA-treated group retained more DOX during the periods of 3, 7, 10, and 14 days than did the DOX-COL group. EDTA root surface etching could enhance DOX availability in the gingival crevicular fluid after its release from the collagen membrane.

A TEMPORAL MAP IN GEOSTATIONARY ORBIT: THE COVER ETCHING ON THE EchoStar XVI ARTIFACT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weisberg, Joel M., E-mail: jweisber@carleton.edu; Paglen, Trevor, E-mail: trevor@paglen.com

Geostationary satellites are unique among orbital spacecraft in that they experience no appreciable atmospheric drag. After concluding their respective missions, geostationary spacecraft remain in orbit virtually in perpetuity. As such, they represent some of human civilization's longest lasting artifacts. With this in mind, the EchoStar XVI satellite, to be launched in fall 2012, will play host to a time capsule intended as a message for the deep future. Inspired in part by the Pioneer Plaque and Voyager Golden Records, the EchoStar XVI Artifact is a pair of gold-plated aluminum jackets housing a small silicon disk containing 100 photographs. The Covermore » Etching, the subject of this paper, is etched onto one of the two jackets. It is a temporal map consisting of a star chart, pulsar timings, and other information describing the epoch from which EchoStar XVI came. The pulsar sample consists of 13 rapidly rotating objects, 5 of which are especially stable, having spin periods <10 ms and extremely small spin-down rates. In this paper, we discuss our approach to the time map etched onto the cover and the scientific data shown on it, and we speculate on the uses that future scientists may have for its data. The other portions of the EchoStar XVI Artifact will be discussed elsewhere.« less

Microelectromechanical systems (MEMS) sensors based on lead zirconate titanate (PZT) films

NASA Astrophysics Data System (ADS)

Wang, Li-Peng

2001-12-01

In this thesis, modeling, fabrication and testing of microelectromechanical systems (MEMS) accelerometers based on piezoelectric lead zirconate titanate (PZT) films are investigated. Three different types of structures, cantilever beam, trampoline, and annular diaphragm, are studied. It demonstrates the high-performance, miniaturate, mass-production-compatible, and potentially circuitry-integratable piezoelectric-type PZT MEMS devices. Theoretical models of the cantilever-beam and trampoline accelerometers are derived via structural dynamics and the constitutive equations of piezoelectricity. The time-dependent transverse vibration equations, mode shapes, resonant frequencies, and sensitivities of the accelerometers are calculated through the models. Optimization of the silicon and PZT thickness is achieved with considering the effects of the structural dynamics, the material properties, and manufacturability for different accelerometer specifications. This work is the first demonstration of the fabrication of bulk-micromachined accelerometers combining a deep-trench reactive ion etching (DRIE) release strategy and thick piezoelectric PZT films deposited using a sol-gel method. Processing challenges which are overcome included materials compatibility, metallization, processing of thick layers, double-side processing, deep-trench silicon etching, post-etch cleaning and process integration. In addition, the processed PZT films are characterized by dielectric, ferroelectric (polarization electric-field hysteresis), and piezoelectric measurements and no adverse effects are found. Dynamic frequency response and impedance resonance measurements are performed to ascertain the performance of the MEMS accelerometers. The results show high sensitivities and broad frequency ranges of the piezoelectric-type PZT MEMS accelerometers; the sensitivities range from 0.1 to 7.6 pC/g for resonant frequencies ranging from 44.3 kHz to 3.7 kHz. The sensitivities were compared to theoretical values and a reasonable agreement (˜36% difference) is obtained.

III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

NASA Astrophysics Data System (ADS)

Megalini, Ludovico

Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch distance. In this dissertation it is presented the first nitride blue edge emitting LD with a photoelectrochemical etched current aperture (CA-LD) into the device active region. Photoelectrochemical etching (PECE) has emerged as a powerful wet etching technique for III-nitride compounds. Beyond the advantages of wet etching technique, PECE offers bandgap selectivity, which is particularly desirable because it allows more freedom in designing new and advanced devices with higher performances. In the first part of this thesis a review of PECE is presented, and it is shown how it can be used to achieve a selective and controllable deep undercut of the active region of LEDs and LDs, in particular the selective PECE of MQW active region of (10-10) m-plane and (20-2-1) plane structures is reported. In the second part of this thesis, the fabrication flow process of the CA-LD is described. The performance of these devices is compared with that of shallow etched ridge LDs with a nominally identical epitaxial structure and active region width and it is experimentally shown that the CA-LD design has superior performance. CW operation of a (20-2-1) CA-LD with a 1.5 microm wide active region is demonstrated. Finally, in the third and last part of this thesis, the CA-LD performance is discussed in more details, in particular, an analysis of optical scattering losses caused by the rough edges of the remnant PEC etched active region is presented.

Low-Temperature Spacecraft: Challenges/Opportunities

NASA Technical Reports Server (NTRS)

Dickman, J. E.; Patterson, R. L.; Overton, E.; Hammoud, A. N.; Gerber, S. S.

2001-01-01

Imagine sending a spacecraft into deep space that operates at the ambient temperature of its environment rather than hundreds of degrees Kelvin warmer. The average temperature of a spacecraft warmed only by the sun drops from 279 K near the Earth's orbit to 90 K near the orbit of Saturn, and to 44 K near Pluto's orbit. At present, deep space probes struggle to maintain an operating temperature near 300 K for the onboard electronics. To warm the electronics without consuming vast amounts of electrical energy, radioisotope heater units (RHUs) are used in vast numbers. Unfortunately, since RHU are always 'on', an active thermal management system is required to reject the excess heat. A spacecraft designed to operate at cryogenic temperatures and shielded from the sun by a large communication dish or solar cell array could be less complex, lighter, and cheaper than current deep space probes. Before a complete low-temperature spacecraft becomes a reality, there are several challenges to be met. Reliable cryogenic power electronics is one of the major challenges. The Low-Temperature Power Electronics Research Group at NASA Glenn Research Center (GRC) has demonstrated the ability of some commercial off the shelf power electronic components to operate at temperatures approaching that of liquid nitrogen (77 K). Below 77 K, there exists an opportunity for the development of reliable semiconductor power switching technologies other than bulk silicon CMOS. This paper will report on the results of NASA GRC's Low-Temperature Power Electronics Program and discuss the challenges to (opportunities for) the creation of a low-temperature spacecraft.

Effect of Deep Cryogenic Treatment on Cyclic Fatigue of Endodontic Rotary Nickel Titanium Instruments

PubMed Central

Yazdizadeh, Mohammad; Skini, Masoumeh; Hoseini Goosheh, Seyyed Mohsen; Jafarzadeh, Mansour; Shamohammadi, Milad; Rakhshan, Vahid

2017-01-01

Introduction: Cyclic fatigue is the common reason for breakage of rotary instruments. This study was conducted to evaluate the effect of cryogenic treatment (CT) in improving the resistance to cyclic fatigue of endodontic rotary instruments. Methods and Materials: In this in vitro study, 20 RaCe and 20 Mtwo files were randomly divided into two groups of negative control and CT. CT files were stored in liquid nitrogen at -196°C for 24 h, and then were gradually warmed to the room temperature. All files were used (at torques and speeds recommended by their manufacturers) in a simulated canal with a 45° curvature until breakage. The time to fail (TF) was recorded and used to calculate the number of cycle to fail (NCF). Groups were compared using independent-samples t-test. Results: Mean NCFs were 1248.2±68.1, 1281.6±78.6, 4126.0±179.2, and 4175.4±190.1 cycles, for the Mtwo-control, Mtwo-CT, RaCe-control, and RaCe-CT, respectively. The difference between the controls and their respective CT groups were not significant (P>0.3). The difference between the systems was significant. Conclusion: Deep CT did not improve resistance to cyclic fatigue of the evaluated rotary files. PMID:28512489

The stress corrosion resistance and the cryogenic temperature mechanical properties of hot rolled Nitronic 32 bar material

NASA Technical Reports Server (NTRS)

Montano, J. W. L.

1977-01-01

The ambient and cryogenic temperature mechanical properties and the ambient temperature stress corrosion properties of hot rolled and centerless ground Nitronic 32 stainless steel bar material are presented. The mechanical properties of longitudinal specimens were evaluated at test temperatures from ambient to liquid hydrogen. The tensile test data indicated increasing smooth tensile strength with decreasing temperature to liquid hydrogen temperature. However, below -200 F (-129.0 C) the notched tensile strength decreased slightly and below -320 F (-196.0 C) the decrease was significant. The elongation and reduction of area decreased drastically at temperatures below -200 F (-129.0 C). The Charpy V-notched impact energy decreased steadily with decreasing test temperature. Stress corrosion tests were performed on longitudinal tensile specimens stressed to 0, 75, and 90 percent of the 0.2 percent yield strength and on transverse 'C'-ring specimens stressed to 75 and 90 percent of the yield strength and exposed to: alternate immersion in a 3.5 percent NaCl bath, humidity cabinet environment, and a 5 percent salt spray atmosphere. The longitudinal tensile specimens experienced no corrosive attack; however, the 'C'-rings exposed to the alternate immersion and to the salt spray experienced some shallow etching and pitting, respectively. Small cracks appeared in two of the 'C'-rings after one month exposure to the salt spray.

VUV lithography

DOEpatents

George, E.V.; Oster, Y.; Mundinger, D.C.

1990-12-25

Deep UV projection lithography can be performed using an e-beam pumped solid excimer UV source, a mask, and a UV reduction camera. The UV source produces deep UV radiation in the range 1,700--1,300A using xenon, krypton or argon; shorter wavelengths of 850--650A can be obtained using neon or helium. A thin solid layer of the gas is formed on a cryogenically cooled plate and bombarded with an e-beam to cause fluorescence. The UV reduction camera utilizes multilayer mirrors having high reflectivity at the UV wavelength and images the mask onto a resist coated substrate at a preselected demagnification. The mask can be formed integrally with the source as an emitting mask. 6 figs.

Characterization of the MEMS Directional Sound Sensor Fabricated Using the SOIMUMPS Process

DTIC Science & Technology

2008-06-01

ABBREVIATIONS AND ACRONYMS ASW Anti- Submarine Warfare AUV Autonomous Underwater Vehicle DRIE Deep Reactive Ion Etching FAS Federation of American...as the frequency diverges from the resonant frequency (2980 Hz ) of the sensor. This analysis points out some disadvantages of the current set up of...sound sensor has important military applications, in particular to anti- submarine warfare (ASW). The sensor considered in this thesis is modeled on

Novel Processes for Modular Integration of Silicon-Germanium MEMS with CMOS Electronics

DTIC Science & Technology

2007-02-28

process limits the compatibility with further lithography steps. Using silicon as the MEMS structural material, most of the integration processes...structures are defined by lithography and deep reactive ion etching. A layer of gasket oxide is deposited as the sacrificial material between the...When the Bragg condition for constructive interference is obtained, a diffraction peak is produced and the relative peak height is proportional to

Dye penetrant indications caused by superficial surface defects in 2014 aluminum alloy welds.

NASA Technical Reports Server (NTRS)

Hocker, R. G.; Wilson, K. R.

1971-01-01

Demonstration that dye penetrant indications on the heat-affected zone of 2014-T6 aluminum GMA weldments are frequently caused by superficial surface conditions and are less than 0.007 in. deep. The following methods are suggested for minimization of these surface defects: stabilization of the arc, application of dc ?GTA' welding procedures, reduction of the caustic etch time, and use of fine grain materials.

Design and Fabrication of Ta filled microcavites in the delay paths of SAW devices for improved power transfer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Richardson, Mandek; Sankaranarayanan, S. K. R. S.; Bhethanabotla, V. R.

2015-03-01

The authors report the design and fabrication of a surface acoustic wave (SAW) device with improved power transfer due to modification of its delay path. Typically, SAW delay-line devices suffer from relatively high insertion loss (IL) (similar to 10-30 dB). Our approach is to incorporate an array of microcavities, having square cross-sectional area (lambda/2 x lambda/2) and filled with tantalum, within the delay path to maximize acoustic confinement to the surface and reduce IL. To determine the effectiveness of the cavities without expending too many resources and to explain trends found in actual devices, a finite element model of amore » SAW device with tantalum filled cavities having various depths was utilized. For each depth simulated, IL was decreased compared to a standard SAW device. Microcavities 2.5 mu m deep filled with tantalum showed the best performance (Delta IL = 17.93 dB). To validate simulated results, the authors fabricated a SAW device on ST 90 degrees-X quartz with microcavities etched into its delay path using deep reactive ion etching and filled with tantalum. Measurement of fabricated devices showed inclusion of tantalum filled microcavities increased power transfer compared to a device without cavities. (C) 2015 American Vacuum Society.« less

Vertical Diaphragm Electrostatic Actuator for a High Density Ink Jet Printer Head

NASA Astrophysics Data System (ADS)

Norimatsu, Takayuki; Tanaka, Shuji; Esashi, Masayoshi

This paper describes the design, fabrication process and preliminary evaluation of an electrostatic ink jet printer head with vertical diaphragms in deep trenches. By adopting the novel structure where an ink cavity is surrounded by the vertical diaphragm, the footprint of each unit (40 μm × 500 μm) becomes approximately one fifth as small as that of a conventional one. Such small footprint is advantageous in cost, resolution and printing speed. To make the vertical diaphragms, a 0.5 μm thick sacrificial thermally-oxidized layer and a 4.5 μm thick poly-silicon layer are sequentially formed in deep-reactive-ion-etched trenches, and then the sacrificial layer is etched away by fluoric acid. The nozzles are fabricated on a Pyrex glass substrate by femtosecond laser ablation, and the nozzle outside is covered with a water repellant Au/Pt/Ti layer. Impedance measurement found that the electrostatic gaps were in contact or closely approaching. This could be because the diaphragms buckled by compressive stress induced in low pressure chemical vapor deposition (LPCVD). Ink ejection was tried using commercially-available blue ink, but failed. The nozzles were covered with the ink, because the water repellant finish of the nozzle outside was not good.

Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

NASA Astrophysics Data System (ADS)

Kuo, Meng-Wei

Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350°C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.

Recovery of shallow junction GaAs solar cells damaged by electron irradiation

NASA Technical Reports Server (NTRS)

Walker, G. H.; Conway, E. J.

1978-01-01

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer

NASA Astrophysics Data System (ADS)

Oh, JiSoo; Oh, Jong Sik; Sung, DaIn; Yim, SoonMin; Song, SeungWon; Yeom, GeunYoung

2017-03-01

Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3 0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of 10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9˚) could be fabricated.

Electronics for Deep Space Cryogenic Applications

NASA Technical Reports Server (NTRS)

Patterson, R. L.; Hammond, A.; Dickman, J. E.; Gerber, S. S.; Elbuluk, M. E.; Overton, E.

2002-01-01

Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.

Electronic Components and Circuits for Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott

2003-01-01

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Constitutive Models for the Viscoelastic Behavior of Polyimide Membranes at Room and Deep Cryogenic Temperatures

DOE PAGES

Bhandarkar, Suhas; Betcher, Jacob; Smith, Ryan; ...

2016-06-30

Targets for ICF shots on NIF typically use ~500nm thin polyimide films with a coating of 25nm of aluminum as windows that seal the laser entrance hole or LEH. Their role is to contain the hohlraum gas and minimize the extraneous infra-red radiation getting in. This is necessary to precisely control the hohlraum thermal environment for layering inside the capsule with solid deuterium-tritium at 18K. Here, we use our empirical data on the bulging behavior of these foils under various different conditions to develop models to capture the complex viscoelastic behavior of these films at both ambient and cryogenic temperatures.more » The constitutive equations derived from these models give us the ability to quantitatively specify the film’s behavior during the fielding of these targets and set the best parameters for new target designs.« less

Propulsion and Cryogenics Advanced Development (PCAD) Project Propulsion Technologies for the Lunar Lander

NASA Technical Reports Server (NTRS)

Klem, Mark D.; Smith, Timothy D.

2008-01-01

The Propulsion and Cryogenics Advanced Development (PCAD) Project in the Exploration Technology Development Program is developing technologies as risk mitigation for Orion and the Lunar Lander. An integrated main and reaction control propulsion system has been identified as a candidate for the Lunar Lander Ascent Module. The propellants used in this integrated system are Liquid Oxygen (LOX)/Liquid Methane (LCH4) propellants. A deep throttle pump fed Liquid Oxygen (LOX)/Liquid Hydrogen (LH2) engine system has been identified for the Lunar Lander Descent Vehicle. The propellant combination and architecture of these propulsion systems are novel and would require risk reduction prior to detailed design and development. The PCAD Project addresses the technology requirements to obtain relevant and necessary test data to further the technology maturity of propulsion hardware utilizing these propellants. This plan and achievements to date will be presented.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sypek, John T.; Yu, Hang; Dusoe, Keith J.

Shape memory materials have the ability to recover their original shape after a significant amount of deformation when they are subjected to certain stimuli, for instance, heat or magnetic fields. But, their performance is often limited by the energetics and geometry of the martensitic-austenitic phase transformation. We report a unique shape memory behavior in CaFe 2As 2, which exhibits superelasticity with over 13% recoverable strain, over 3 GPa yield strength, repeatable stress–strain response even at the micrometer scale, and cryogenic linear shape memory effects near 50 K. These properties are acheived through a reversible uni-axial phase transformation mechanism, the tetragonal/orthorhombic-to-collapsed-tetragonalmore » phase transformation. These results offer the possibility of developing cryogenic linear actuation technologies with a high precision and high actuation power per unit volume for deep space exploration, and more broadly, suggest a mechanistic path to a class of shape memory materials, ThCr 2Si 2-structured intermetallic compounds.« less

High quality factor GaAs microcavity with buried bullseye defects

NASA Astrophysics Data System (ADS)

Winkler, K.; Gregersen, N.; Häyrynen, T.; Bradel, B.; Schade, A.; Emmerling, M.; Kamp, M.; Höfling, S.; Schneider, C.

2018-05-01

The development of high quality factor solid-state microcavities with low mode volumes has paved the way towards on-chip cavity quantum electrodynamics experiments and the development of high-performance nanophotonic devices. Here, we report on the implementation of a new kind of solid-state vertical microcavity, which allows for confinement of the electromagnetic field in the lateral direction without deep etching. The confinement originates from a local elongation of the cavity layer imprinted in a shallow etch and epitaxial overgrowth technique. We show that it is possible to improve the quality factor of such microcavities by a specific in-plane bullseye geometry consisting of a set of concentric rings with subwavelength dimensions. This design results in a smooth effective lateral photonic potential and therefore in a reduction of lateral scattering losses, which makes it highly appealing for experiments in the framework of exciton-polariton physics demanding tight spatial confinement.

Lateral cavity photonic crystal surface emitting lasers with ultralow threshold and large power

NASA Astrophysics Data System (ADS)

Wang, Yufei; Qu, Hongwei; Zhou, Wenjun; Jiang, Bin; Zhang, Jianxin; Qi, Aiyi; Liu, Lei; Fu, Feiya; Zheng, Wanhua

2012-03-01

The Bragg diffraction condition of surface-emitting lasing action is analyzed and Γ2-1 mode is chosen for lasing. Two types of lateral cavity photonic crystal surface emitting lasers (LC-PCSELs) based on the PhC band edge mode lateral resonance and vertical emission to achieve electrically driven surface emitting laser without distributed Bragg reflectors in the long wavelength optical communication band are designed and fabricated. Deep etching techniques, which rely on the active layer being or not etched through, are adopted to realize the LC-PCSELs on the commercial AlGaInAs/InP multi-quantum-well (MQW) epitaxial wafer. 1553.8 nm with ultralow threshold of 667 A/cm2 and 1575 nm with large power of 1.8 mW surface emitting lasing actions are observed at room temperature, providing potential values for mass production with low cost of electrically driven PCSELs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lii-Rosales, Ann; Zhou, Yinghui; Wallingford, Mark

When using scanning tunneling microscopy, we characterize a surface carbide that forms such that Dy is deposited on the basal plane of graphite. In order to form carbide islands on terraces, Dy is first deposited at 650–800 K, which forms large metallic islands. Upon annealing at 1000 K, these clusters convert to carbide. Deposition directly at 1000 K is ineffective because nucleation on terraces is inhibited. Reaction is signaled by the fact that each carbide cluster is partially or totally surrounded by an etch pit. The etch pit is one carbon layer deep for most carbide clusters. Carbide clusters aremore » also identifiable by striations on their surfaces. Based on mass balance, and assuming that only the surface layer of carbon is involved in the reaction, the carbide has stoichiometry D y 2 C . This is Dy-rich compared with the most common bulk carbide Dy C 2 , which may reflect limited surface carbon transport to the carbide.« less

Type-controlled nanodevices based on encapsulated few-layer black phosphorus for quantum transport

NASA Astrophysics Data System (ADS)

Long, Gen; Xu, Shuigang; Shen, Junying; Hou, Jianqiang; Wu, Zefei; Han, Tianyi; Lin, Jiangxiazi; Wong, Wing Ki; Cai, Yuan; Lortz, Rolf; Wang, Ning

2016-09-01

We demonstrate that encapsulation of atomically thin black phosphorus (BP) by hexagonal boron nitride (h-BN) sheets is very effective for minimizing the interface impurities induced during fabrication of BP channel material for quantum transport nanodevices. Highly stable BP nanodevices with ultrahigh mobility and controllable types are realized through depositing appropriate metal electrodes after conducting a selective etching to the BP encapsulation structure. Chromium and titanium are suitable metal electrodes for BP channels to control the transition from a p-type unipolar property to ambipolar characteristic because of different work functions. Record-high mobilities of 6000 cm2 V-1 s-1 and 8400 cm2 V-1 s-1 are respectively obtained for electrons and holes at cryogenic temperatures. High-mobility BP devices enable the investigation of quantum oscillations with an indistinguishable Zeeman effect in laboratory magnetic field.

NASA Collaborative Design Processes

NASA Technical Reports Server (NTRS)

Jones, Davey

2017-01-01

This is Block 1, the first evolution of the world's most powerful and versatile rocket, the Space Launch System, built to return humans to the area around the moon. Eventually, larger and even more powerful and capable configurations will take astronauts and cargo to Mars. On the sides of the rocket are the twin solid rocket boosters that provide more than 75 percent during liftoff and burn for about two minutes, after which they are jettisoned, lightening the load for the rest of the space flight. Four RS-25 main engines provide thrust for the first stage of the rocket. These are the world's most reliable rocket engines. The core stage is the main body of the rocket and houses the fuel for the RS-25 engines, liquid hydrogen and liquid oxygen, and the avionics, or "brain" of the rocket. The core stage is all new and being manufactured at NASA's "rocket factory," Michoud Assembly Facility near New Orleans. The Launch Vehicle Stage Adapter, or LVSA, connects the core stage to the Interim Cryogenic Propulsion Stage. The Interim Cryogenic Propulsion Stage, or ICPS, uses one RL-10 rocket engine and will propel the Orion spacecraft on its deep-space journey after first-stage separation. Finally, the Orion human-rated spacecraft sits atop the massive Saturn V-sized launch vehicle. Managed out of Johnson Space Center in Houston, Orion is the first spacecraft in history capable of taking humans to multiple destinations within deep space. 2) Each element of the SLS utilizes collaborative design processes to achieve the incredible goal of sending human into deep space. Early phases are focused on feasibility and requirements development. Later phases are focused on detailed design, testing, and operations. There are 4 basic phases typically found in each phase of development.

WSi2/Si multilayer sectioning by reactive ion etching for multilayer Laue lens fabrication

NASA Astrophysics Data System (ADS)

Bouet, N.; Conley, R.; Biancarosa, J.; Divan, R.; Macrander, A. T.

2010-09-01

Reactive ion etching (RIE) has been employed in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics with a large investment put towards the development of deep RIE. Due to the intrinsic differing chemistries related to reactivity, ion bombardment, and passivation of materials, the development of recipes for new materials or material systems can require intense effort and resources. For silicon in particular, methods have been developed to provide reliable anisotropic profiles with good dimensional control and high aspect ratios1,2,3, high etch rates, and excellent material to mask etch selectivity. A multilayer Laue lens4 is an x-ray focusing optic, which is produced by depositing many layers of two materials with differing electron density in a particular stacking sequence where the each layer in the stack satisfies the Fresnel zone plate law. When this stack is sectioned to allow side-illumination with radiation, the diffracted exiting radiation will constructively interfere at the focal point. Since the first MLLs were developed at Argonne in the USA in 20064, there have been published reports of MLL development efforts in Japan5, and, very recently, also in Germany6. The traditional technique for sectioning multilayer Laue lens (MLL) involves mechanical sectioning and polishing7, which is labor intensive and can induce delamination or structure damage and thereby reduce yield. If a non-mechanical technique can be used to section MLL, it may be possible to greatly shorten the fabrication cycle, create more usable optics from the same amount of deposition substrate, and perhaps develop more advanced structures to provide greater stability or flexibility. Plasma etching of high aspect-ratio multilayer structures will also expand the scope for other types of optics fabrication (such as gratings, zone plates, and so-on). However, well-performing reactive ion etching recipes have been developed for only a small number of materials, and even less recipes exist for concurrent etching of more than one element so a fully material specific process needs to be developed. In this paper, sectioning of WSi2/Si multilayers for MLL fabrication using fluorinated gases is investigated. The main goals were to demonstrate the feasibility of this technique, achievement of high anisotropy, adequate sidewall roughness control and high etching rates. We note that this development for MLL sidewalls should be distinguished from work on improving aspect ratios in traditional Fresnel zone plates. Aspect ratios for MLL sidewalls are not similarly constrained.

Advances in the Use of Thermography to Inspect Composite Tanks for Liquid Fuel Propulsion Systems

NASA Technical Reports Server (NTRS)

Lansing, Matthew D.; Russell, Samuel S.; Walker, James L.; Jones, Clyde S. (Technical Monitor)

2001-01-01

This viewgraph presentation gives an overview of advances in the use of thermography to inspect composite tanks for liquid fuel propulsion systems. Details are given on the thermographic inspection system, thermographic analysis method (includes scan and defect map, method of inspection, and inclusions, ply wrinkle, and delamination defects), graphite composite cryogenic feedline (including method, image map, and deep/shallow inclusions and resin rich area defects), and material degradation nondestructive evaluation.

Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists

NASA Astrophysics Data System (ADS)

Thackeray, James W.; Bohland, John F.; Pavelchek, , Edward K.; Orsula, George W.; McCullough, Andrew W.; Jones, Susan K.; Bobbio, Stephen M.

1990-01-01

This paper describes continuing efforts in the development of Acid Hardened Resist (AHR) systems for use in deep UV photolithography. The Silylated AHR (SAHR) process treats a highly absorbing resist, such as XP-8928, with trimethylsilyldiethylamine. The exposed, crosslinked areas show virtually no reactivity with the silylating agent, and the unexposed areas incorporate 10 to 12% by weight silicon in the film. The silicon appears to incorporate from the exterior in a constant concentration, consistent with Case II diffusion. Subsequent dry etching leads to a positive tone image. The contrast is 5, and the photospeed is ~10 mJ/cm2. Resolution of 0.5 μm line/space pairs has been demonstrated, although substantial proximity effects are encountered.

Fabricating binary optics: An overview of binary optics process technology

NASA Technical Reports Server (NTRS)

Stern, Margaret B.

1993-01-01

A review of binary optics processing technology is presented. Pattern replication techniques have been optimized to generate high-quality efficient microoptics in visible and infrared materials. High resolution optical photolithography and precision alignment is used to fabricate maximally efficient fused silica diffractive microlenses at lambda = 633 nm. The degradation in optical efficiency of four-phase-level fused silica microlenses resulting from an intentional 0.35 micron translational error has been systematically measured as a function of lens speed (F/2 - F/60). Novel processes necessary for high sag refractive IR microoptics arrays, including deep anisotropic Si-etching, planarization of deep topography and multilayer resist techniques, are described. Initial results are presented for monolithic integration of photonic and microoptic systems.

Propulsion Risk Reduction Activities for Non-Toxic Cryogenic Propulsion

NASA Technical Reports Server (NTRS)

Smith, Timothy D.; Klem, Mark D.; Fisher, Kenneth

2010-01-01

The Propulsion and Cryogenics Advanced Development (PCAD) Project s primary objective is to develop propulsion system technologies for non-toxic or "green" propellants. The PCAD project focuses on the development of non-toxic propulsion technologies needed to provide necessary data and relevant experience to support informed decisions on implementation of non-toxic propellants for space missions. Implementation of non-toxic propellants in high performance propulsion systems offers NASA an opportunity to consider other options than current hypergolic propellants. The PCAD Project is emphasizing technology efforts in reaction control system (RCS) thruster designs, ascent main engines (AME), and descent main engines (DME). PCAD has a series of tasks and contracts to conduct risk reduction and/or retirement activities to demonstrate that non-toxic cryogenic propellants can be a feasible option for space missions. Work has focused on 1) reducing the risk of liquid oxygen/liquid methane ignition, demonstrating the key enabling technologies, and validating performance levels for reaction control engines for use on descent and ascent stages; 2) demonstrating the key enabling technologies and validating performance levels for liquid oxygen/liquid methane ascent engines; and 3) demonstrating the key enabling technologies and validating performance levels for deep throttling liquid oxygen/liquid hydrogen descent engines. The progress of these risk reduction and/or retirement activities will be presented.

Propulsion Risk Reduction Activities for Nontoxic Cryogenic Propulsion

NASA Technical Reports Server (NTRS)

Smith, Timothy D.; Klem, Mark D.; Fisher, Kenneth L.

2010-01-01

The Propulsion and Cryogenics Advanced Development (PCAD) Project s primary objective is to develop propulsion system technologies for nontoxic or "green" propellants. The PCAD project focuses on the development of nontoxic propulsion technologies needed to provide necessary data and relevant experience to support informed decisions on implementation of nontoxic propellants for space missions. Implementation of nontoxic propellants in high performance propulsion systems offers NASA an opportunity to consider other options than current hypergolic propellants. The PCAD Project is emphasizing technology efforts in reaction control system (RCS) thruster designs, ascent main engines (AME), and descent main engines (DME). PCAD has a series of tasks and contracts to conduct risk reduction and/or retirement activities to demonstrate that nontoxic cryogenic propellants can be a feasible option for space missions. Work has focused on 1) reducing the risk of liquid oxygen/liquid methane ignition, demonstrating the key enabling technologies, and validating performance levels for reaction control engines for use on descent and ascent stages; 2) demonstrating the key enabling technologies and validating performance levels for liquid oxygen/liquid methane ascent engines; and 3) demonstrating the key enabling technologies and validating performance levels for deep throttling liquid oxygen/liquid hydrogen descent engines. The progress of these risk reduction and/or retirement activities will be presented.

Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

NASA Technical Reports Server (NTRS)

Hartley, F.; Malek, C.; Neogi, J.

2001-01-01

The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

The sea urchin egg jelly coat is a three-dimensional fibrous network as seen by intermediate voltage electron microscopy and deep etching analysis.

PubMed

Bonnell, B S; Larabell, C; Chandler, D E

1993-06-01

The egg jelly (EJ) coat which surrounds the unfertilized sea urchin egg undergoes extensive swelling upon contact with sea water, forming a three-dimensional network of interconnected fibers extending nearly 50 microns from the egg surface. Owing to its solubility, this coat has been difficult to visualize by light and electron microscopy. However, Lytechinus pictus EJ coats remain intact, if the fixation medium is maintained at pH 9. The addition of alcian blue during the final dehydration step of sample preparation stains the EJ for visualization of resin embedded eggs by both light and electron microscopy. Stereo pairs taken of thick sections prepared for intermediate voltage electron microscopy (IVEM) produce a three-dimensional image of the EJ network, consisting of interconnected fibers decorated along their length by globular jelly components. Using scanning electron microscopy (SEM), we have shown that before swelling, EJ exists in a tightly bound network of jelly fibers, 50-60 nm in diameter. In contrast, swollen EJ consists of a greatly extended network whose fibrous components measure 10 to 30 nm in diameter. High resolution stereo images of hydrated jelly produced by the quick-freeze/deep-etch/rotary-shadowing technique (QF/DE/RS) show nearly identical EJ networks, suggesting that dehydration does not markedly alter the structure of this extracellular matrix.

Stereo imaging and cytocompatibility of a model dental implant surface formed by direct laser fabrication.

PubMed

Mangano, Carlo; Raspanti, Mario; Traini, Tonino; Piattelli, Adriano; Sammons, Rachel

2009-03-01

Direct laser fabrication (DLF) allows solids with complex geometry to be produced by sintering metal powder particles in a focused laser beam. In this study, 10 Ti6Al4V alloy model dental root implants were obtained by DLF, and surface characterization was carried out using stereo scanning electron microscopy to produce 3D reconstructions. The surfaces were extremely irregular, with approximately 100 microm deep, narrow intercommunicating crevices, shallow depressions and deep, rounded pits of widely variable shape and size, showing ample scope for interlocking with the host bone. Roughness parameters were as follows: R(t), 360.8 microm; R(z), 358.4 microm; R(a), 67.4 microm; and R(q), 78.0 microm. Disc specimens produced by DLF with an identically prepared surface were used for biocompatibility studies with rat calvarial osteoblasts: After 9 days, cells had attached and spread on the DLF surface, spanning across the crevices, and voids. Cell density was similar to that on a commercial rough microtextured surface but lower than on commercial smooth machined and smooth-textured grit-blasted, acid-etched surfaces. Human fibrin clot extension on the DLF surface was slightly improved by inorganic acid etching to increase the microroughness. With further refinements, DLF could be an economical means of manufacturing implants from titanium alloys. (c) 2008 Wiley Periodicals, Inc.

Fabrication Method for LOBSTER-Eye Optics in <110> Silicon

NASA Technical Reports Server (NTRS)

Chervenak, James; Collier, Michael; Mateo, Jennette

2013-01-01

Soft x-ray optics can use narrow slots to direct x-rays into a desirable pattern on a focal plane. While square-pack, square-pore, slumped optics exist for this purpose, they are costly. Silicon (Si) is being examined as a possible low-cost replacement. A fabrication method was developed for narrow slots in <110> Si demonstrating the feasibility of stacked slot optics to replace micropores. Current micropore optics exist that have 20-micron-square pores on 26-micron pitch in glass with a depth of 1 mm and an extent of several square centimeters. Among several proposals to emulate the square pore optics are stacked slot chips with etched vertical slots. When the slots in the stack are positioned orthogonally to each other, the component will approach the soft x-ray focusing observed in the micropore optics. A specific improvement Si provides is that it can have narrower sidewalls between slots to permit greater throughput of x-rays through the optics. In general, Si can have more variation in slot geometry (width, length). Further, the sidewalls can be coated with high-Z materials to enhance reflection and potentially reduce the surface roughness of the reflecting surface. Narrow, close-packed deep slots in <110> Si have been produced using potassium hydroxide (KOH) etching and a patterned silicon nitride (SiN) mask. The achieved slot geometries have sufficient wall smoothness, as observed through scanning electron microscope (SEM) imaging, to enable evaluation of these slot plates as an optical element for soft x-rays. Etches of different angles to the crystal plane of Si were evaluated to identify a specific range of etch angles that will enable low undercut slots in the Si <110> material. These slots with the narrow sidewalls are demonstrated to several hundred microns in depth, and a technical path to 500-micron deep slots in a precision geometry of narrow, closepacked slots is feasible. Although intrinsic stress in ultrathin wall Si is observed, slots with walls approaching 1.5 microns can be achieved (a significant improvement over the 6-micron walls in micro - pore optics). The major advantages of this technique are the potential for higher x-ray throughout (due to narrow slot walls) and lower cost over the existing slumped micropore glass plates. KOH etching of smooth sidewalls has been demonstrated for many applications, suggesting its feasibility for implementation in x-ray optics. Si cannot be slumped like the micropore optics, so the focusing will be achieved with millimeter-scale slot plates that populate a spherical dome. The possibility for large-scale production exists for Si parts that is more difficult to achieve in micropore parts.

Two methods to simulate intrapulpal pressure: effects upon bonding performance of self-etch adhesives.

PubMed

Feitosa, V P; Gotti, V B; Grohmann, C V; Abuná, G; Correr-Sobrinho, L; Sinhoreti, M A C; Correr, A B

2014-09-01

To evaluate the effects of two methods to simulate physiological pulpal pressure on the dentine bonding performance of two all-in-one adhesives and a two-step self-etch silorane-based adhesive by means of microtensile bond strength (μTBS) and nanoleakage surveys. The self-etch adhesives [G-Bond Plus (GB), Adper Easy Bond (EB) and silorane adhesive (SIL)] were applied to flat deep dentine surfaces from extracted human molars. The restorations were constructed using resin composites Filtek Silorane or Filtek Z350 (3M ESPE). After 24 h using the two methods of simulated pulpal pressure or no pulpal pressure (control groups), the bonded teeth were cut into specimens and submitted to μTBS and silver uptake examination. Results were analysed with two-way anova and Tukey's test (P < 0.05). Both methods of simulated pulpal pressure led statistically similar μTBS for all adhesives. No difference between control and pulpal pressure groups was found for SIL and GB. EB led significant drop (P = 0.002) in bond strength under pulpal pressure. Silver impregnation was increased after both methods of simulated pulpal pressure for all adhesives, and it was similar between the simulated pulpal pressure methods. The innovative method to simulate pulpal pressure behaved similarly to the classic one and could be used as an alternative. The HEMA-free one-step and the two-step self-etch adhesives had acceptable resistance against pulpal pressure, unlike the HEMA-rich adhesive. © 2013 International Endodontic Journal. Published by John Wiley & Sons Ltd.

Fabrication of high aspect ratio TiO{sub 2} and Al{sub 2}O{sub 3} nanogratings by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shkondin, Evgeniy, E-mail: eves@fotonik.dtu.dk; Takayama, Osamu; Lavrinenko, Andrei V.

The authors report on the fabrication of TiO{sub 2} and Al{sub 2}O{sub 3} nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching followed by ALD of TiO{sub 2} or Al{sub 2}O{sub 3}. Then, the template was etched away using SF{sub 6} in an inductively coupled plasma tool, which resulted in the formation of isolated ALD coatings, thereby achieving high aspect ratio grating structures. SF{sub 6} plasma removes silicon selectively withoutmore » any observable influence on TiO{sub 2} or Al{sub 2}O{sub 3}, thus revealing high selectivity throughout the fabrication. Scanning electron microscopy was used to analyze every fabrication step. Due to nonreleased stress in the ALD coatings, the top parts of the gratings were observed to bend inward as the Si template was removed, thus resulting in a gradual change in the pitch value of the structures. The pitch on top of the gratings is 400 nm, and it gradually reduces to 200 nm at the bottom. The form of the bending can be reshaped by Ar{sup +} ion beam etching. The chemical purity of the ALD grown materials was analyzed by x-ray photoelectron spectroscopy. The approach presented opens the possibility to fabricate high quality optical metamaterials and functional nanostructures.« less

In vitro dentin barrier cytotoxicity testing of some dental restorative materials.

PubMed

Jiang, R D; Lin, H; Zheng, G; Zhang, X M; Du, Q; Yang, M

2017-03-01

To investigate the cytotoxicity of four dental restorative materials in three-dimensional (3D) L929 cell cultures using a dentin barrier test. The cytotoxicities of light-cured glass ionomer cement (Vitrebond), total-etching adhesive (GLUMA Bond5), and two self-etching adhesives (GLUMA Self Etch and Single Bond Universal) were evaluated. The permeabilities of human dentin disks with thicknesses of 300, 500, and 1000μm were standardized using a hydraulic device. Test materials and controls were applied to the occlusal side of human dentin disks. The 3D-cell scaffolds were placed beneath the dentin disks. After a 24-h contact with the dentin barrier test device, cell viabilities were measured by performing MTT assays. Statistical analysis was performed using the Mann-Whitney U test. The mean (SD) permeabilities of the 300-μm, 500-μm, and 1000-μm dentin disks were 0.626 (0.214), 0.219 (0.0387) and 0.089 (0.028) μlmin -1 cm -2 cm H 2 O -1 . Vitrebond was severely cytotoxic, reducing the cell viability to 10% (300-μm disk), 17% (500μm), and 18% (1000μm). GLUMA Bond5 reduced the cell viability to 40% (300μm), 83% (500μm), and 86% (1000μm), showing moderate cytotoxicity (300-μm) and non-cytotoxicity (500-μm and 1000-μm). Single Bond Universal and GLUMA Self Etch did not significantly reduce cell viability, regardless of the dentin thicknesses, which characterized them as non-cytotoxic. Cytotoxicity varied with the materials tested and the thicknesses of the dentin disks. The tested cytotoxicity of materials applied on 300-, 500-, and 1000-μm dentin disks indicates that the clinical use of the test materials (excepting self-etching adhesives) in deep cavities poses a potential risk of damage to the pulp tissues to an extent, depending on the thickness of the remaining dentin. Copyright © 2017 Elsevier Ltd. All rights reserved.

Apollo experience report: Descent propulsion system

NASA Technical Reports Server (NTRS)

Hammock, W. R., Jr.; Currie, E. C.; Fisher, A. E.

1973-01-01

The propulsion system for the descent stage of the lunar module was designed to provide thrust to transfer the fully loaded lunar module with two crewmen from the lunar parking orbit to the lunar surface. A history of the development of this system is presented. Development was accomplished primarily by ground testing of individual components and by testing the integrated system. Unique features of the descent propulsion system were the deep throttling capability and the use of a lightweight cryogenic helium pressurization system.

Continuous self-locking spiral wound seal. [for maintaining pressure between chambers in cryogenic wind tunnels

NASA Technical Reports Server (NTRS)

Irick, S. C. (Inventor)

1982-01-01

A spiral wound seal for effecting a seal between two surfaces is described. The seal consists of a strip of gasket material wound into a groove machined into one of the surfaces. The gasket strip is wider than the groove is deep so that a portion of the gasket material protrudes from the groove. The seal is effected by clamping the second surface onto the first surface and compressing the protruding gasket material.

Project Report: Design and Analysis for the Deep Space Network BWG Type 2 Antenna Feed Platform

NASA Technical Reports Server (NTRS)

Crawford, Andrew

2011-01-01

The following report explains in detail the solid modeling design process and structural analysis of the LNA (Low Noise Amplifier) feed platform to be constructed and installed on the new BWG (Beam Wave Guide) Type-2 tracking antenna in Canberra, Australia, as well as all future similar BWG Type-2 antennas builds. The Deep Space Networks new BWG Type-2 antennas use beam waveguides to funnel and 'extract' the desired signals received from spacecraft, and the feed platform supports and houses the LNA(Low Noise Amplifier) feed-cone and cryogenic cooling equipment used in the signal transmission and receiving process. The mandated design and construction of this platform to be installed on the new tracking antenna will be used and incorporated on all future similar antenna builds.

Wire-bonder-assisted integration of non-bondable SMA wires into MEMS substrates

NASA Astrophysics Data System (ADS)

Fischer, A. C.; Gradin, H.; Schröder, S.; Braun, S.; Stemme, G.; van der Wijngaart, W.; Niklaus, F.

2012-05-01

This paper reports on a novel technique for the integration of NiTi shape memory alloy wires and other non-bondable wire materials into silicon-based microelectromechanical system structures using a standard wire-bonding tool. The efficient placement and alignment functions of the wire-bonding tool are used to mechanically attach the wire to deep-etched silicon anchoring and clamping structures. This approach enables a reliable and accurate integration of wire materials that cannot be wire bonded by traditional means.

Plasma-deposited fluoropolymer film mask for local porous silicon formation

PubMed Central

2012-01-01

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unlike most of other masks, fluoropolymer removal after electrochemical etching is rapid and does not alter the porous layer. Local porous regions were thus fabricated both in p+-type and low-doped n-type silicon substrates. PMID:22734507

Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

NASA Technical Reports Server (NTRS)

Papapolymerou, Ioannis John

2004-01-01

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.

PubMed

Venturi, Giulia; Castaldini, Antonio; Schleusener, Alexander; Sivakov, Vladimir; Cavallini, Anna

2015-05-15

Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.

Evaluation of ASR potential of quartz-rich rocks by alkaline etching of polished rock sections

NASA Astrophysics Data System (ADS)

Šachlová, Šárka; Kuchařová, Aneta; Pertold, Zdeněk; Přikryl, Richard

2015-04-01

Damaging effect of alkali-silica reaction (ASR) on concrete structures has been observed in various countries all over the World. Civil engineers and real state owners are demanding reliable methods in the assessment of ASR potential of aggregates before they are used in constructions. Time feasible methods are expected, as well as methods which enable prediction of long-term behaviour of aggregates in concrete. The most frequently employed accelerated mortar bar test (AMBT) quantifies ASR potential of aggregates according to the expansion values of mortar bars measured after fourteen days testing period. Current study aimed to develop a new methodical approach facilitating identification and quantification of ASR potential of aggregates. Polished rock sections of quartz and amorphous SiO2 (coming from orthoquartzite, quartz meta-greywacke, pegmatite, phyllite, chert, and flint) were subjected to experimental leaching in 1M NaOH solution at 80°C. After 14 days of alkaline etching, the rock sections were analyzed employing scanning electron microscope combined with energy dispersive spectrometer. Representative areas were documented in back scattered electron (BSE) images and measured using fully-automatic petrographic image analysis (PIA). Several features connected to alkaline etching were observed on the surface of polished rock sections: deep alkaline etching, partial leach-out of quartz and amorphous particles, alkaline etching connected to quartz grain boundaries, and alkaline etching without any connection to grain boundaries. All features mentioned above had significant influence on grey-scale spectrum of BSE images. A specific part of the grey-scale spectrum (i.e. grey-shade 0-70) was characteristic of areas affected by alkaline etching (ASR area). By measuring such areas we quantified the extent of alkaline etching in studied samples. Very good correlation was found between the ASR area and ASR potential of investigated rocks measured according to the standard AMBT (folowing ASTM C1260). The etching experiment is regarded to be feasible method to quantify ASR potential of quartz- (resp. SiO2-) rich rocks. Employement of the method: (1) decreases potential error from less experienced operator; (2) minimizes the volume of the rock need to be analyzed; (3) enables to visualize microscopic features where ASR originates; and (4) enables to identify alkali-reactive components in the rocks. The main disadvatage of the method is regarded in the restriction to quartz- (resp. SiO2-) rich rocks. If other minerals are included in the rocks their role in ASR should be considered. These minerals can be excluded from the analysis in case they are not reactive and if their content is very low (e.g. accesory minerals). If the minerals contribute to ASR (e.g. albite, micas), these mineral phases should be included in the analysis. Then the application of PIA needs to be modified in respect to different grey shades of individual minerals.

Height-selective etching for regrowth of self-aligned contacts using MBE

NASA Astrophysics Data System (ADS)

Burek, G. J.; Wistey, M. A.; Singisetti, U.; Nelson, A.; Thibeault, B. J.; Bank, S. R.; Rodwell, M. J. W.; Gossard, A. C.

2009-03-01

Advanced III-V transistors require unprecedented low-resistance contacts in order to simultaneously scale bandwidth, fmax and ft with the physical active region [M.J.W. Rodwell, M. Le, B. Brar, in: Proceedings of the IEEE, 96, 2008, p. 748]. Low-resistance contacts have been previously demonstrated using molecular beam epitaxy (MBE), which provides active doping above 4×10 19 cm -3 and permits in-situ metal deposition for the lowest resistances [U. Singisetti, M.A. Wistey, J.D. Zimmerman, B.J. Thibeault, M.J.W. Rodwell, A.C. Gossard, S.R. Bank, Appl. Phys. Lett., submitted]. But MBE is a blanket deposition technique, and applying MBE regrowth to deep-submicron lateral device dimensions is difficult even with advanced lithography techniques. We present a simple method for selectively etching undesired regrowth from the gate or mesa of a III-V MOSFET or laser, resulting in self-aligned source/drain contacts regardless of the device dimensions. This turns MBE into an effectively selective area growth technique.

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.

PubMed

Feng, Ning-Ning; Feng, Dazeng; Liao, Shirong; Wang, Xin; Dong, Po; Liang, Hong; Kung, Cheng-Chih; Qian, Wei; Fong, Joan; Shafiiha, Roshanak; Luo, Ying; Cunningham, Jack; Krishnamoorthy, Ashok V; Asghari, Mehdi

2011-04-11

We demonstrate a compact waveguide-based high-speed Ge electro-absorption (EA) modulator integrated with a single mode 3 µm silicon-on-isolator (SOI) waveguide. The Ge EA modulator is based on a horizontally-oriented p-i-n structure butt-coupled with a deep-etched silicon waveguide, which transitions adiabatically to a shallow-etched single mode large core SOI waveguide. The demonstrated device has a compact active region of 1.0 × 45 µm(2), a total insertion loss of 2.5-5 dB and an extinction ratio of 4-7.5 dB over a wavelength range of 1610-1640 nm with -4V(pp) bias. The estimated Δα/α value is in the range of 2-3.3. The 3 dB bandwidth measurements show that the device is capable of operating at more than 30 GHz. Clear eye-diagram openings at 12.5 Gbps demonstrates large signal modulation at high transmission rate. © 2011 Optical Society of America

Microscopic observations of X-ray and gamma-ray induced decomposition of ammonium perchlorate crystals

NASA Technical Reports Server (NTRS)

Herley, P. J.; Levy, P. W.

1972-01-01

The X-ray and gamma-ray induced decomposition of ammonium perchlorate was studied by optical, transmission, and scanning electron microscopy. This material is a commonly used oxidizer in solid propellents which could be employed in deep-space probes, and where they will be subjected to a variety of radiations for as long as ten years. In some respects the radiation-induced damage closely resembles the effects produced by thermal decomposition, but in other respects the results differ markedly. Similar radiation and thermal effects include the following: (1) irregular or ill-defined circular etch pits are formed in both cases; (2) approximately the same size pits are produced; (3) the pit density is similar; (4) the c face is considerably more reactive than the m face; and (5) most importantly, many of the etch pits are aligned in crystallographic directions which are the same for thermal or radiolytic decomposition. Thus, dislocations play an important role in the radiolytic decomposition process.

Formation of dysprosium carbide on the graphite (0001) surface

DOE PAGES

Lii-Rosales, Ann; Zhou, Yinghui; Wallingford, Mark; ...

2017-07-12

When using scanning tunneling microscopy, we characterize a surface carbide that forms such that Dy is deposited on the basal plane of graphite. In order to form carbide islands on terraces, Dy is first deposited at 650–800 K, which forms large metallic islands. Upon annealing at 1000 K, these clusters convert to carbide. Deposition directly at 1000 K is ineffective because nucleation on terraces is inhibited. Reaction is signaled by the fact that each carbide cluster is partially or totally surrounded by an etch pit. The etch pit is one carbon layer deep for most carbide clusters. Carbide clusters aremore » also identifiable by striations on their surfaces. Based on mass balance, and assuming that only the surface layer of carbon is involved in the reaction, the carbide has stoichiometry D y 2 C . This is Dy-rich compared with the most common bulk carbide Dy C 2 , which may reflect limited surface carbon transport to the carbide.« less

High-directionality fiber-chip grating coupler with interleaved trenches and subwavelength index-matching structure.

PubMed

Benedikovic, Daniel; Alonso-Ramos, Carlos; Cheben, Pavel; Schmid, Jens H; Wang, Shurui; Xu, Dan-Xia; Lapointe, Jean; Janz, Siegfried; Halir, Robert; Ortega-Moñux, Alejandro; Wangüemert-Pérez, J Gonzalo; Molina-Fernández, Iñigo; Fédéli, Jean-Marc; Vivien, Laurent; Dado, Milan

2015-09-15

We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of -1.3  dB, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

Ultra-low loss fully-etched grating couplers for perfectly vertical coupling compatible with DUV lithography tools

NASA Astrophysics Data System (ADS)

Dabos, G.; Pleros, N.; Tsiokos, D.

2016-03-01

Hybrid integration of VCSELs onto silicon-on-insulator (SOI) substrates has emerged as an attractive approach for bridging the gap between cost-effective and energy-efficient directly modulated laser sources and silicon-based PICs by leveraging flip-chip (FC) bonding techniques and silicon grating couplers (GCs). In this context, silicon GCs, should comply with the process requirements imposed by the complimentary-metal-oxide-semiconductor manufacturing tools addressing in parallel the challenges originating from the perfectly vertical incidence. Firstly, fully etched GCs compatible with deep-ultraviolet lithography tools offering high coupling efficiencies are imperatively needed to maintain low fabrication cost. Secondly, GC's tolerance to VCSEL bonding misalignment errors is a prerequisite for practical deployment. Finally, a major challenge originating from the perfectly vertical coupling scheme is the minimization of the direct back-reflection to the VCSEL's outgoing facet which may destabilize its operation. Motivated from the above challenges, we used numerical simulation tools to design an ultra-low loss, bidirectional VCSEL-to-SOI optical coupling scheme for either TE or TM polarization, based on low-cost fully etched GCs with a Si-layer of 340 nm without employing bottom reflectors or optimizing the buried-oxide layer. Comprehensive 2D Finite-Difference-Time- Domain simulations have been performed. The reported GC layout remains fully compatible with the back-end-of-line (BEOL) stack associated with the 3D integration technology exploiting all the inter-metal-dielectric (IMD) layers of the CMOS fab. Simulation results predicted for the first time in fully etched structures a coupling efficiency of as low as -0.87 dB at 1548 nm and -1.47 dB at 1560 nm with a minimum direct back-reflection of -27.4 dB and -14.2 dB for TE and TM polarization, respectively.

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

NASA Technical Reports Server (NTRS)

Das, K.; Mazumder, M. D. A.; Hall, H.; Alterovitz, Samuel A. (Technical Monitor)

2000-01-01

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Fabrication of p-type porous silicon nanowire with oxidized silicon substrate through one-step MACE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Shaoyuan; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093; Ma, Wenhui, E-mail: mwhsilicon@163.com

2014-05-01

In this paper, the simple pre-oxidization process is firstly used to treat the starting silicon wafer, and then MPSiNWs are successfully fabricated from the moderately doped wafer by one-step MACE technology in HF/AgNO{sub 3} system. The PL spectrum of MPSiNWs obtained from the oxidized silicon wafers show a large blue-shift, which can be attributed to the deep Q. C. effect induced by numerous mesoporous structures. The effects of HF and AgNO{sub 3} concentration on formation of SiNWs were carefully investigated. The results indicate that the higher HF concentration is favorable to the growth of SiNWs, and the density of SiNWsmore » is significantly reduced when Ag{sup +} ions concentrations are too high. The deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon surface were studied. According to the experimental results, a model was proposed to explain the formation mechanism of porous SiNWs by etching the oxidized starting silicon. - Graphical abstract: Schematic cross-sectional views of PSiNWs array formation by etching oxidized silicon wafer in HF/AgNO{sub 3} solution. (A) At the starting point; (B) during the etching process; and (C) after Ag dendrites remove. - Highlights: • Prior to etching, a simple pre-oxidation is firstly used to treat silicon substrate. • The medially doped p-type MPSiNWs are prepared by one-step MACE. • Deposition behaviors of Ag{sup +} ions on oxidized and unoxidized silicon are studied. • A model is finally proposed to explain the formation mechanism of PSiNWs.« less

Effects of processing history on the evolution of surface damage layer and dislocation substructure in large grain niobium cavities

DOE PAGES

Kang, D.; Bieler, T. R.; Compton, C.

2015-12-16

Large grain niobium (Nb) is being investigated for fabricating superconducting radiofrequency cavities as an alternative to the traditional approach using fine grain polycrystalline Nb sheets. Past studies have identified a surface damage layer on fine grain cavities due to deep drawing and demonstrated the necessity for chemical etching on the surface. However, the origin of and depth of the damage layer are not well understood, and similar exploration on large grain cavities is lacking. In this work, electron backscatter diffraction (EBSD) was used to examine the cross sections at the equator and iris of a half cell deep drawn frommore » a large grain Nb ingot slice. The results indicate that the damage (identified by a high density of geometrically necessary dislocations) depends on crystal orientations, is different at the equator and iris, and is present through the full thickness of a half cell in some places. After electron backscatter diffraction, the specimens were heat treated at 800 °C or 1000 °C for two hours, and the same areas were reexamined. A more dramatic decrease in dislocation content was observed at the iris than the equator, where some regions exhibited no change. The specimens were then etched and examined again, to determine if the subsurface region behaved differently than the surface. As a result, little change in the dislocation substructure was observed, suggesting that the large grain microstructure is retained with a normal furnace anneal.« less

Effects of tricyclazole (5-methyl-1,2,4-triazol[3,4] benzothiazole), a specific DHN-melanin inhibitor, on the morphology of Fonsecaea pedrosoi conidia and sclerotic cells.

PubMed

Franzen, Anderson J; Cunha, Marcel M L; Batista, Evander J O; Seabra, Sergio H; De Souza, Wanderley; Rozental, Sonia

2006-09-01

The influence of tricyclazole (5-methyl-1,2,4-triazol[3,4]benzothiazole), a specific DHN-melanin inhibitor, on the cell walls and intracellular structures of Fonsecaea pedrosoi conidia and sclerotic cells was analyzed by transmission electron microscopy (TEM), deep-etching, and field emission scanning electron microscopy. The treatment of the fungus with 16 microg mL(-1) of tricyclazole (TC) did not significantly affect fungal viability, but electron microscopy observations showed several important morphological differences between TC-treated and non-TC treated cells. Control sclerotic cells presented patched granules, with an average diameter of 47 nm, on the cell surface, which were absent in TC-treated cells. Also, TC-treated sclerotic cells showed an undulated relief. TC treatment leads to an accumulation of electron lucent vacuoles in the fungal cytoplasm of both conidia and sclerotic cells, and treated conidia observed by deep etching showed a relevant thickening of the fungal cell wall. Together, these observations support the previous data of our group that F. pedrosoi synthesizes melanin in intracellular organelles. In addition, we suggest that melanin is not only an extracellular constituent but could also be dispersing all over the cell walls and could have an effective role in cross-linking different cell wall compounds that help maintain the regular shape of the cell wall. (c) 2006 Wiley-Liss, Inc.

Prevention of water-contamination of ethanol-saturated dentin and hydrophobic hybrid layers

PubMed Central

Sauro, Salvatore; Watson, Timothy F; Mannocci, Francesco; Tay, Franklin R; Pashley, David H

2013-01-01

SUMMARY Purpose This in vitro study evaluated the amount and the distribution of outward fluid flow that occurred when an experimental etch-and-rinse hydrophobic adhesive was applied to ethanol-saturated dentin before and after oxalate pretreatment. Materials and methods Measurements of dentin permeability were performed under a constant pulpal pressure of 20 cm H2O in deep and middle dentin. A lucifer yellow solution was placed in the pulp chamber to determine the distribution of the water contamination of the hybrid layers. Results The distribution of fluorescence in dentin specimens that were not pretreated with oxalate revealed that the dye permeated around the resin tags and filled the hybrid layer. Dentin specimens pretreated with oxalate prior to resin bonding, showed 80–83% less (p<0.05) water contamination compared to controls. The dentin permeability results obtained before and after oxalate pretreatment showed that oxalate decreased dentin permeability by 98% (p<0.05) compared to acid-etched controls. This prevented outward fluid movement during bonding resulting in better resin sealing of dentin due to the formation of a double seal of resin tags over calcium oxalate crystals in the tubules. Conclusion Outward dentinal fluid flow may contaminate hybrid layers during adhesive bonding procedures. Pretreatment of acid-etched dentin with 3% oxalic acid prior to bonding procedures can prevent outward fluid flow during bonding and water contamination of the hydrophobic hybrid layers. PMID:19701507

ELISA: a cryocooled 10 GHz oscillator with 10(-15) frequency stability.

PubMed

Grop, S; Bourgeois, P Y; Bazin, N; Kersalé, Y; Rubiola, E; Langham, C; Oxborrow, M; Clapton, D; Walker, S; De Vicente, J; Giordano, V

2010-02-01

This article reports the design, the breadboarding, and the validation of an ultrastable cryogenic sapphire oscillator operated in an autonomous cryocooler. The objective of this project was to demonstrate the feasibility of a frequency stability of 3x10(-15) between 1 and 1000 s for the European Space Agency deep space stations. This represents the lowest fractional frequency instability ever achieved with cryocoolers. The preliminary results presented in this paper validate the design we adopted for the sapphire resonator, the cold source, and the oscillator loop.

Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Q.; Liang, Y. X.; Ferry, D.

2014-07-07

We report on the results obtained from specially designed high electron mobility transistors at 4.2 K: the gate leakage current can be limited lower than 1 aA, and the equivalent input noise-voltage and noise-current at 1 Hz can reach 6.3 nV/Hz{sup 1∕2} and 20 aA/Hz{sup 1∕2}, respectively. These results open the way to realize high performance low-frequency readout electronics under very low-temperature conditions.

Cryogenic filters for RFI protection

NASA Technical Reports Server (NTRS)

Bautista, J. J.; Petty, S. M.

1981-01-01

The increased bandwidth and sensitivity of the DSN maser-based receiver systems along with the increase in worldwide microwave spectrum usage dictated the need for employing additional measures to protect these systems from RFI (radio frequency inerference). Both in-band and out-of-band microwave signals at the input of the Deep Space Network (DSN) traveling wave masers (TWM) can adversely affect the maser performance in a variety of ways. Filters fabricated from superconducting materials operating below their superconducting transition temperature (Tc) possess the most potential for providing the necessary RFI protection without degrading the system performance.

Thermal shock testing for assuring reliability of glass-sealed microelectronic packages

NASA Technical Reports Server (NTRS)

Thomas, Walter B., III; Lewis, Michael D.

1991-01-01

Tests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.

Evaluation of resonating Si cantilevers sputter-deposited with AlN piezoelectric thin films for mass sensing applications

NASA Astrophysics Data System (ADS)

Sökmen, Ü.; Stranz, A.; Waag, A.; Ababneh, A.; Seidel, H.; Schmid, U.; Peiner, E.

2010-06-01

We report on a micro-machined resonator for mass sensing applications which is based on a silicon cantilever excited with a sputter-deposited piezoelectric aluminium nitride (AlN) thin film actuator. An inductively coupled plasma (ICP) cryogenic dry etching process was applied for the micro-machining of the silicon substrate. A shift in resonance frequency was observed, which was proportional to a mass deposited in an e-beam evaporation process on top. We had a mass sensing limit of 5.2 ng. The measurements from the cantilevers of the two arrays revealed a quality factor of 155-298 and a mass sensitivity of 120.34 ng Hz-1 for the first array, and a quality factor of 130-137 and a mass sensitivity of 104.38 ng Hz-1 for the second array. Furthermore, we managed to fabricate silicon cantilevers, which can be improved for the detection in the picogram range due to a reduction of the geometrical dimensions.

Fabrication and Characteristics of Free Standing Shaped Pupil Masks for TPF-Coronagraph

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatham; Echternach, Pierre M.; Dickie, Matthew R.; Muller, Richard E.; White, Victor E.; Hoppe, Daniel J.; Shaklan, Stuart B.; Belikov, Ruslan; Kasdin, N. Jeremy; Vanderbei, Robert J.;

Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

PubMed

Chiu, Yi; Pan, Jiun-Hung

2007-05-14

The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

Fabrication and testing of freestanding Si nanogratings for UV filtration on space-based particle sensors.

PubMed

Mukherjee, Pran; Zurbuchen, Thomas H; Guo, L Jay

2009-08-12

We demonstrate complete fabrication process integration and device performance of sturdy, self-supported transmission gratings in silicon. Gratings are patterned with nanoimprint lithography and aluminum liftoff on silicon-on-insulator wafers. Double-sided deep reactive ion etching (DRIE) creates freestanding 120 nm half-pitch gratings with 2000 nm depth and built-in 1 mm pitch bulk silicon support structures. Optical characterization demonstrates 10(-4) transmission of UV in the 190-250 nm band while a 25-30% geometric transparency allows particles to pass unimpeded for space plasma measurements.

Fabrication of Buried Nanochannels From Nanowire Patterns

NASA Technical Reports Server (NTRS)

Choi, Daniel; Yang, Eui-Hyeok

2007-01-01

A method of fabricating channels having widths of tens of nanometers in silicon substrates and burying the channels under overlying layers of dielectric materials has been demonstrated. With further refinement, the method might be useful for fabricating nanochannels for manipulation and analysis of large biomolecules at single-molecule resolution. Unlike in prior methods, burying the channels does not involve bonding of flat wafers to the silicon substrates to cover exposed channels in the substrates. Instead, the formation and burying of the channels are accomplished in a more sophisticated process that is less vulnerable to defects in the substrates and less likely to result in clogging of, or leakage from, the channels. In this method, the first step is to establish the channel pattern by forming an array of sacrificial metal nanowires on an SiO2-on-Si substrate. In particular, the wire pattern is made by use of focused-ion-beam (FIB) lithography and a subsequent metallization/lift-off process. The pattern of metal nanowires is then transferred onto the SiO2 layer by reactive-ion etching, which yields sacrificial SiO2 nanowires covered by metal. After removal of the metal covering the SiO2 nanowires, what remains are SiO2 nanowires on an Si substrate. Plasma-enhanced chemical vapor deposition (PECVD) is used to form a layer of a dielectric material over the Si substrate and over the SiO2 wires on the surface of the substrate. FIB milling is then performed to form trenches at both ends of each SiO2 wire. The trenches serve as openings for the entry of chemicals that etch SiO2 much faster than they etch Si. Provided that the nanowires are not so long that the diffusion of the etching chemicals is blocked, the sacrificial SiO2 nanowires become etched out from between the dielectric material and the Si substrate, leaving buried channels. At the time of reporting the information for this article, channels 3 m long, 20 nm deep, and 80 nm wide (see figure) had been fabricated by this method.

Nanotip Carpets as Antireflection Surfaces

NASA Technical Reports Server (NTRS)

Bae, Youngsam; Mobasser, Sohrab; Manohara, Harish; Lee, Choonsup

2008-01-01

Carpet-like random arrays of metal-coated silicon nanotips have been shown to be effective as antireflection surfaces. Now undergoing development for incorporation into Sun sensors that would provide guidance for robotic exploratory vehicles on Mars, nanotip carpets of this type could also have many uses on Earth as antireflection surfaces in instruments that handle or detect ultraviolet, visible, or infrared light. In the original Sun-sensor application, what is required is an array of 50-micron-diameter apertures on what is otherwise an opaque, minimally reflective surface, as needed to implement a miniature multiple-pinhole camera. The process for fabrication of an antireflection nanotip carpet for this application (see Figure 1) includes, and goes somewhat beyond, the process described in A New Process for Fabricating Random Silicon Nanotips (NPO-40123), NASA Tech Briefs, Vol. 28, No. 1 (November 2004), page 62. In the first step, which is not part of the previously reported process, photolithography is performed to deposit etch masks to define the 50-micron apertures on a silicon substrate. In the second step, which is part of the previously reported process, the non-masked silicon area between the apertures is subjected to reactive ion etching (RIE) under a special combination of conditions that results in the growth of fluorine-based compounds in randomly distributed formations, known in the art as "polymer RIE grass," that have dimensions of the order of microns. The polymer RIE grass formations serve as microscopic etch masks during the next step, in which deep reactive ion etching (DRIE) is performed. What remains after DRIE is the carpet of nano - tips, which are high-aspect-ratio peaks, the tips of which have radii of the order of nanometers. Next, the nanotip array is evaporatively coated with Cr/Au to enhance the absorption of light (more specifically, infrared light in the Sun-sensor application). The photoresist etch masks protecting the apertures are then removed by dipping the substrate into acetone. Finally, for the Sun-sensor application, the back surface of the substrate is coated with a 57-nm-thick layer of Cr for attenuation of sunlight.

Tungsten Inert Gas and Friction Stir Welding Characteristics of 4-mm-Thick 2219-T87 Plates at Room Temperature and -196 °C

NASA Astrophysics Data System (ADS)

Lei, Xuefeng; Deng, Ying; Yin, Zhimin; Xu, Guofu

2014-06-01

2219-T87 aluminum alloy is widely used for fabricating liquid rocket propellant storage tank, due to its admirable cryogenic property. Welding is the dominant joining method in the manufacturing process of aerospace components. In this study, the tungsten inert gas welding and friction stir welding (FSW) characteristics of 4-mm-thick 2219-T87 alloy plate at room temperature (25 °C) and deep cryogenic temperature (-196 °C) were investigated by property measurements and microscopy methods. The studied 2219 base alloy exhibits a low strength plane anisotropy and excellent room temperature and cryogenic mechanical properties. The ultimate tensile strength values of TIG and FSW welding joints can reach 265 and 353 MPa at room temperature, and 342 and 438 MPa at -196 °C, respectively. The base metal consists of elongated deformed grains and many nano-scaled θ (Al2Cu) aging precipitates. Fusion zone and heat-affected zone (HAZ) of the TIG joint are characterized by coarsening dendritic grains and equiaxed recrystallized grains, respectively. The FSW-welded joint consists of the weld nugget zone, thermo-mechanically affected zone (TMAZ), and HAZ. In the weld nugget zone, a micro-scaled sub-grain structure is the main microstructure characteristic. The TMAZ and HAZ are both characterized by coarsened aging precipitates and elongated deformed grains. The excellent FSW welding properties are attributed to the preservation of the working structures and homogenous chemical compositions.

A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

PubMed

Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

2011-09-01

The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithography.

PubMed

Benedikovic, Daniel; Alonso-Ramos, Carlos; Pérez-Galacho, Diego; Guerber, Sylvain; Vakarin, Vladyslav; Marcaud, Guillaume; Le Roux, Xavier; Cassan, Eric; Marris-Morini, Delphine; Cheben, Pavel; Boeuf, Frédéric; Baudot, Charles; Vivien, Laurent

2017-09-01

Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling to sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high coupling efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for the first time, to the best of our knowledge, the realization of an ultra-directional L-shaped grating coupler, seamlessly fabricated by using 193 nm deep-ultraviolet (deep-UV) lithography. We also include a subwavelength index engineered waveguide-to-grating transition that provides an eight-fold reduction of the grating reflectivity, down to 1% (-20  dB). A measured coupling efficiency of -2.7  dB (54%) is achieved, with a bandwidth of 62 nm. These results open promising prospects for the implementation of efficient, robust, and cost-effective coupling interfaces for sub-micrometric SOI waveguides, as desired for large-volume applications in silicon photonics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Danno, Katsunori; Kimoto, Tsunenobu

The authors have investigated deep levels in as-grown and electron-irradiated p-type 4H-SiC epilayers by deep level transient spectroscopy. In as-grown epilayers, the D center and four deep levels are observed. In p-type 4H-SiC, reactive ion etching followed by thermal treatment (at 1150 degree sign C) induces the HK0 (E{sub V}+0.79 eV) and HK2 (E{sub V}+0.84 eV) centers. By the electron irradiation, two deep levels at 0.98 eV (EP1) and 1.44 eV (EP2) are observed in all the samples irradiated at 116-400 keV, while two additional deep levels (EP3 and EP4) are observed only in the samples irradiated at 400 keV.more » After annealing at 950 degree sign C, these centers are annealed out, and the HK4 (E{sub V}+1.44 eV) concentration is increased. By the electron irradiation at more than 160 keV followed by annealing at 950 degree sign C, three deep levels are always observed at 0.30 eV (UK1), 0.58 eV (UK2), and 1.44 eV (HK4). These centers may be defect complexes including carbon displacement-related defects. All the centers except for the D center are reduced to below the detection limit (1-3x10{sup 11} cm{sup -3}) by annealing at 1550 degree sign C for 30 min.« less

Gravitational Microlensing Observations of Two New Exoplanets Using the Deep Impact High Resolution Instrument

NASA Astrophysics Data System (ADS)

Barry, Richard K.; Bennett, D. P.; Klaasen, K.; Becker, A. C.; Christiansen, J.; Albrow, M.

2014-01-01

We have worked to characterize two exoplanets newly detected from the ground: OGLE-2012-BLG-0406 and OGLE-2012-BLG-0838, using microlensing observations of the Galactic Bulge recently obtained by NASA’s Deep Impact (DI) spacecraft, in combination with ground data. These observations of the crowded Bulge fields from Earth and from an observatory at a distance of ~1 AU have permitted the extraction of a microlensing parallax signature - critical for breaking exoplanet model degeneracies. For this effort, we used DI’s High Resolution Instrument, launched with a permanent defocus aberration due to an error in cryogenic testing. We show how the effects of a very large, chromatic PSF can be reduced in differencing photometry. We also compare two approaches to differencing photometry - one of which employs the Bramich algorithm and another using the Fruchter & Hook drizzle algorithm.

Application of a quick-freezing and deep-etching method to pathological diagnosis: a case of elastofibroma.

PubMed

Hemmi, Akihiro; Tabata, Masahiko; Homma, Taku; Ohno, Nobuhiko; Terada, Nobuo; Fujii, Yasuhisa; Ohno, Shinichi; Nemoto, Norimichi

2006-04-01

A case of elastofibroma in a middle-aged Japanese woman was examined by the quick-freezing and deep-etching (QF-DE) method, as well as by immunohistochemistry and conventional electron microscopy. The slowly growing tumor developed at the right scapular region and was composed of fibrous connective tissue with unique elastic materials called elastofibroma fibers. A normal elastic fiber consists of a central core and peripheral zone, in which the latter has small aggregates of 10 nm microfibrils. By the QF-DE method, globular structures consisting of numerous fibrils (5-20 nm in width) were observed between the collagen bundles. We could confirm that they were microfibril-rich peripheral zones of elastofibroma fibers by comparing the replica membrane and conventional electron microscopy. One of the characteristics of elastofibroma fibers is that they are assumed to contain numerous microfibrils. Immunohistochemically, spindle tumor cells showed positive immunoreaction for vimentin, whereas alpha-smooth muscle actin, desmin, S-100 protein and CD34 showed negative immunoreaction. By conventional electron microscopy, the tumor cell had thin cytoplasmic processes, pinocytotic vesicles and prominent rough endoplasmic reticulum. Abundant intracytoplasmic filaments were observed in some tumor cells. Thick lamina-like structures along with their inner nuclear membrane were often observed in the tumor cell nuclei. The whole image of the tumor cell was considered to be a periosteal-derived cell, which would produce numerous microfibrils in the peripheral zone of elastofibroma fibers. This study indicated that the QF-DE method could be applied to the pathological diagnosis and analysis of pathomechanism, even for surgical specimens obtained from a patient.

Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

NASA Astrophysics Data System (ADS)

Pallon, J.; Syväjärvi, M.; Wang, Q.; Yakimova, R.; Iakimov, T.; Elfman, M.; Kristiansson, P.; Nilsson, E. J. C.; Ros, L.

2016-03-01

Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

Self-assembled titanium calcium oxide nanopatterns as versatile reactive nanomasks for dry etching lithographic transfer with high selectivity.

PubMed

Faustini, Marco; Drisko, Glenna L; Letailleur, Alban A; Montiel, Rafael Salas; Boissière, Cédric; Cattoni, Andrea; Haghiri-Gosnet, Anne Marie; Lerondel, Gilles; Grosso, David

2013-02-07

We report the simple preparation of ultra-thin self-assembled nanoperforated titanium calcium oxide films and their use as reactive nanomasks for selective dry etching of silicon. This novel reactive nanomask is composed of TiO(2) in which up to 50% of Ti was replaced by Ca (Ca(x)Ti(1-x)O(2-x)). The system was prepared by evaporation induced self-assembly of dip-coated solution of CaCl(2), TiCl(4) and poly(butadiene-block-ethylene oxide) followed by 5 min of thermal treatment at 500 °C in air. The mask exhibits enhanced selectivity by forming a CaF(2) protective layer in the presence of a chemically reactive fluorinated plasma. In particular it is demonstrated that ordered nano-arrays of dense Si pillars, or deep cylindrical wells, with high aspect ratio i.e. lateral dimensions as small as 20 nm and height up to 200 nm, can be formed. Both wells and pillars were formed by tuning the morphology and the homogeneity of the deposited mask. The mask preparation is extremely fast and simple, low-cost and easily scalable. Its combination with reactive ion etching constitutes one of the first examples of what can be achieved when sol-gel chemistry is coupled with top-down technologies. The resulting Si nanopatterns and nanostructures are of high interest for applications in many fields of nanotechnology including electronics and optics. This work extends and diversifies the toolbox of nanofabrication methods.

Transmission-enabled fiber Fabry-Perot cavity based on a deeply etched slotted micromirror.

PubMed

Othman, Muhammad A; Sabry, Yasser M; Sadek, Mohamed; Nassar, Ismail M; Khalil, Diaa A

2018-06-01

In this work, we report the analysis, fabrication, and characterization of an optical cavity built using a Bragg-coated fiber (BCF) mirror and a metal-coated microelectromechanical systems (MEMS) slotted micromirror, where the latter allows transmission output from the cavity. Theoretical modeling, using Fourier optics analysis for the cavity response based on tracing the propagation of light back and forth between the mirrors, is presented. Detailed simulation analysis is carried out for the spectral response of the cavity under different design conditions. MEMS chips of the slotted micromirror are fabricated using deep reactive ion etching of a silicon-on-insulator substrate with different device-etching depths of 150 μm and 80 μm with aluminum and gold metal coating, respectively. The cavity is characterized as an optical filter using a BCF with reflectivity that is larger than 95% in a 300 nm range across the E-band and the L-band. Versatile filter characteristics were obtained for different values of the MEMS micromirror slit width and cavity length. A free spectral range (FSR) of about 33 nm and a quality factor of about 196 were obtained for a 5.5 μm width aluminum slit, while an FSR of about 148 nm and a quality factor of about 148 were obtained for a 1.5 μm width gold slit. The presented structure opens the door for wide spectral response transmission-type MEMS filters.

Unified design of sinusoidal-groove fused-silica grating.

PubMed

Feng, Jijun; Zhou, Changhe; Cao, Hongchao; Lu, Peng

2010-10-20

A general design rule of deep-etched subwavelength sinusoidal-groove fused-silica grating as a highly efficient polarization-independent or polarization-selective device is studied based on the simplified modal method, which shows that the device structure depends little on the incident wavelength, but mainly on the ratio of groove depth to incident wavelength and the ratio of wavelength to grating period. These two ratios could be used as the design guidelines for wavelength-independent structure from deep ultraviolet to far infrared. The optimized grating profile with a different function as a polarizing beam splitter, a polarization-independent two-port beam splitter, or a polarization-independent grating with high efficiency of -1st order is obtained at a wavelength of 1064 nm, and verified by using the rigorous coupled-wave analysis. The performance of the sinusoidal grating is better than a conventional rectangular one, which could be useful for practical applications.

Oxygen-assisted multipass cutting of carbon fiber reinforced plastics with ultra-short laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kononenko, T. V.; Komlenok, M. S.; Konov, V. I.

Deep multipass cutting of bidirectional and unidirectional carbon fiber reinforced plastics (CFRP) with picosecond laser pulses was investigated in different static atmospheres as well as with the assistance of an oxygen or nitrogen gas flow. The ablation rate was determined as a function of the kerf depth and the resulting heat affected zone was measured. An assisting oxygen gas flow is found to significantly increase the cutting productivity, but only in deep kerfs where the diminished evaporative ablation due to the reduced laser fluence reaching the bottom of the kerf does not dominate the contribution of reactive etching anymore. Oxygen-supportedmore » cutting was shown to also solve the problem that occurs when cutting the CFRP parallel to the fiber orientation where a strong deformation and widening of the kerf, which temporarily slows down the process speed, is revealed to be typical for processing in standard air atmospheres.« less

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-03-01

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

Characterization of Low Noise TES Detectors Fabricated by D-RIE Process for SAFARI Short-Wavelength Band

NASA Astrophysics Data System (ADS)

Khosropanah, P.; Suzuki, T.; Hijmering, R. A.; Ridder, M. L.; Lindeman, M. A.; Gao, J.-R.; Hoevers, H.

2014-08-01

SRON is developing TES detectors based on a superconducting Ti/Au bilayer on a suspended SiN membrane for the short-wavelength band of the SAFARI instrument on SPICA mission. We have recently replaced the wet KOH etching of the Si substrate by deep reactive ion etching. The new process enables us to fabricate the detectors on the substrate and release the membrane at the very last step. Therefore the production of SAFARI large arrays (4343) on thin SiN membrane (250 nm) is feasible. It also makes it possible to realize narrow supporting SiN legs of 1 m, which are needed to meet SAFARI NEP requirements. Here we report the current-voltage characteristics, noise performance and impedance measurement of these devices. The measured results are then compared with the distributed leg model that takes into account the thermal fluctuation noise due to the SiN legs. We measured a dark NEP of 0.7 aW/, which is 1.6 times higher than the theoretically expected phonon noise.

Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces

NASA Astrophysics Data System (ADS)

Kesler, V. G.; Seleznev, V. A.; Kovchavtsev, A. P.; Guzev, A. A.

2010-05-01

X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 °C. Etching for 2-30 min resulted in the formation of "pits" and "hillocks" on the sample surface, respectively 1-2 nm deep and high, with lateral dimensions 50-100 nm. The observed local formations, whose density was up to 3 × 10 8 cm -2, entirely vanished from the surface after the samples were vacuum-annealed at temperatures above 300 °C. Using a direct method, electron beam microanalysis, we have determined that the defects of the hillock type includes oxygen and excessive As, while the "pits" proved to be identical in their chemical composition to InAs. Vacuum anneals were found to cause a decrease in As surface concentration relative to In on InAs surface, with a concomitant rise of surface recombination rate.

Status of backthinned AlGaN based focal plane arrays for deep-UV imaging

NASA Astrophysics Data System (ADS)

Reverchon, J.-L.; Lehoucq, G.; Truffer, J.-P.; Costard, E.; Frayssinet, E.; Semond, F.; Duboz, J.-Y.; Giuliani, A.; Réfrégiers, M.; Idir, M.

2017-11-01

The achievement of deep ultraviolet (UV) focal plane arrays (FPA) is required for both solar physics [1] and micro electronics industry. The success of solar mission (SOHO, STEREO [2], SDO [3]…), has shown the accuracy of imaging at wavelengths from 10 nm to 140 nm to reveal effects occurring in the sun corona. Deep UV steppers at 13 nm are another demanding imaging technology for the microelectronic industry in terms of uniformity and stability. A third application concerns beam shaping of Synchrotron lines [4]. Consequently, such wavelengths are of prime importance whereas the vacuum UV wavelengths are very difficult to detect due to the dramatic interaction of light with materials. The fast development of nitrides has given the opportunity to investigate AlGaN as a material for UV detection. Camera based on AlGaN present an intrinsic spectral selectivity and an extremely low dark current at room temperature. We have previously presented several FPA dedicated to deep UV based on 320 x 256 pixels of Schottky photodiodes with a pitch of 30 μm [4, 5]. AlGaN is grown on a silicon substrate instead of sapphire substrate only transparent down to 200 nm. After a flip-chip hybridization, silicon substrate and AlGaN basal layer was removed by dry etching. Then, the spectral responsivity of the FPA presented a quantum efficiency (QE) from 5% to 20% from 50 nm to 290 nm when removing the highly doped contact layer via a selective wet etching. This FPA suffered from a low uniformity incompatible with imaging, and a long time response due to variations of conductivity in the honeycomb. We also observed a low rejection of visible. It is probably due to the same honeycomb conductivity enhancement for wavelength shorter than 360 nm, i.e., the band gap of GaN. We will show hereafter an improved uniformity due to the use of a precisely ICP (Inductively Coupled Plasma) controlled process. The final membrane thickness is limited to the desertion layer. Neither access resistance limitation nor long response time are observed. QE varies from 5% at 50 nm to 15% at 6 nm (85% more when taking into account the filling factor). Consequently, we can propose prototypes concerning not only "solar blind" camera optimized for narrow band in the near UV range (between 280 nm and 260 nm), but also devices with spectral range extended in the deep UV (290 nm to 10 nm). Both detectors are available for an optical budget evaluation.

Thermoacoustic and photoacoustic sensing of temperature.

PubMed

Pramanik, Manojit; Wang, Lihong V

2009-01-01

We present a novel temperature-sensing technique using thermoacoustic and photoacoustic measurements. This noninvasive method has been demonstrated using a tissue phantom to have high temporal resolution and temperature sensitivity. Because both photoacoustic and thermoacoustic signal amplitudes depend on the temperature of the source object, the signal amplitudes can be used to monitor the temperature. A temperature sensitivity of 0.15 degrees C was obtained at a temporal resolution as short as 2 s, taking the average of 20 signals. The deep-tissue imaging capability of this technique can potentially lead us to in vivo temperature monitoring in thermal or cryogenic applications.

Laser synthesis and spectroscopy of acetonitrile/silver nanoparticles

NASA Astrophysics Data System (ADS)

Akin, S. T.; Liu, X.; Duncan, M. A.

2015-11-01

Silver nanoparticles with acetonitrile ligands are produced in a laser ablation flow reactor. Excimer laser ablation produces gas phase metal clusters which are thermalized with helium or argon collisions in the flowtube, and reactions with acetonitrile vapor coordinate this ligand to the particle surface. The gaseous mixture is captured in a cryogenic trap; warming produces a solution of excess ligand and coated particles. TEM images reveal particle sizes of 10-30 nm diameter. UV-vis absorption and fluorescence spectra are compared to those of standard silver nanoparticles with surfactant coatings. Deep-UV ligand absorption is strongly enhanced by nanoparticle adsorption.

Fabrication and characterization of a deep ultraviolet wire grid polarizer with a chromium-oxide subwavelength grating.

PubMed

Asano, Kosuke; Yokoyama, Satoshi; Kemmochi, Atsushi; Yatagai, Toyohiko

2014-05-01

A wire grid polarizer comprised of chromium oxide is designed for a micro-lithography system using an ArF excimer laser. Optical properties for some material candidates are calculated using a rigorous coupled-wave analysis. The chromium oxide wire grid polarizer with a 90 nm period is fabricated by a double-patterning technique using KrF lithography and dry etching. The extinction ratio of the grating is greater than 20 dB (100:1) at a wavelength of 193 nm. Differences between the calculated and experimental results are discussed.

Introducing etch kernels for efficient pattern sampling and etch bias prediction

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2018-01-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

Deep Cryogenic Low Power 24 Bits Analog to Digital Converter with Active Reverse Cryostat

NASA Astrophysics Data System (ADS)

Turqueti, Marcos; Prestemon, Soren; Albright, Robert

LBNL is developing an innovative data acquisition module for superconductive magnets where the front-end electronics and digitizer resides inside the cryostat. This electronic package allows conventional electronic technologies such as enhanced metal-oxide-semiconductor to work inside cryostats at temperatures as low as 4.2 K. This is achieved by careful management of heat inside the module that keeps the electronic envelop at approximately 85 K. This approach avoids all the difficulties that arise from changes in carrier mobility that occur in semiconductors at deep cryogenic temperatures. There are several advantages in utilizing this system. A significant reduction in electrical noise from signals captured inside the cryostat occurs due to the low temperature that the electronics is immersed in, reducing the thermal noise. The shorter distance that signals are transmitted before digitalization reduces pickup and cross-talk between channels. This improved performance in signal-to-noise rate by itself is a significant advantage. Another important advantage is the simplification of the feedthrough interface on the cryostat head. Data coming out of the cryostat is digital and serial, dramatically reducing the number of lines going through the cryostat feedthrough interface. It is important to notice that all lines coming out of the cryostat are digital and low voltage, reducing the possibility of electric breakdown inside the cryostat. This paper will explain in details the architecture and inner workings of this data acquisition system. It will also provide the performance of the analog to digital converter when the system is immersed in liquid helium, and in liquid nitrogen. Parameters such as power dissipation, integral non-linearity, effective number of bits, signal-to-noise and distortion, will be presented for both temperatures.

Deep Cryogenic Low Power 24 Bits Analog to Digital Converter with Active Reverse Cryostat

DOE PAGES

Turqueti, Marcos; Prestemon, Soren; Albright, Robert

2015-07-15

LBNL is developing an innovative data acquisition module for superconductive magnets where the front-end electronics and digitizer resides inside the cryostat. This electronic package allows conventional electronic technologies such as enhanced metal–oxide–semiconductor to work inside cryostats at temperatures as low as 4.2 K. This is achieved by careful management of heat inside the module that keeps the electronic envelop at approximately 85 K. This approach avoids all the difficulties that arise from changes in carrier mobility that occur in semiconductors at deep cryogenic temperatures. There are several advantages in utilizing this system. A significant reduction in electrical noise from signalsmore » captured inside the cryostat occurs due to the low temperature that the electronics is immersed in, reducing the thermal noise. The shorter distance that signals are transmitted before digitalization reduces pickup and cross-talk between channels. This improved performance in signal-to-noise rate by itself is a significant advantage. Another important advantage is the simplification of the feedthrough interface on the cryostat head. Data coming out of the cryostat is digital and serial, dramatically reducing the number of lines going through the cryostat feedthrough interface. It is important to notice that all lines coming out of the cryostat are digital and low voltage, reducing the possibility of electric breakdown inside the cryostat. This paper will explain in details the architecture and inner workings of this data acquisition system. It will also provide the performance of the analog to digital converter when the system is immersed in liquid helium, and in liquid nitrogen. Parameters such as power dissipation, integral non-linearity, effective number of bits, signal-to-noise and distortion, will be presented for both temperatures.« less

Silicon nitride and silicon etching by CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaler, Sanbir S.; Lou, Qiaowei; Donnelly, Vincent M., E-mail: vmdonnelly@uh.edu

2016-07-15

Silicon nitride (SiN, where Si:N ≠ 1:1) films low pressure-chemical vapor deposited on Si substrates, Si films on Ge on Si substrates, and p-Si samples were exposed to plasma beams emanating from CH{sub 3}F/O{sub 2} or CH{sub 3}F/CO{sub 2} inductively coupled plasmas. Conditions within the plasma beam source were maintained at power of 300 W (1.9 W/cm{sup 3}), pressure of 10 mTorr, and total gas flow rate of 10 sccm. X-ray photoelectron spectroscopy was used to determine the thicknesses of Si/Ge in addition to hydrofluorocarbon polymer films formed at low %O{sub 2} or %CO{sub 2} addition on p-Si and SiN. Polymer film thickness decreasedmore » sharply as a function of increasing %O{sub 2} or %CO{sub 2} addition and dropped to monolayer thickness above the transition point (∼48% O{sub 2} or ∼75% CO{sub 2}) at which the polymer etchants (O and F) number densities in the plasma increased abruptly. The C(1s) spectra for the polymer films deposited on p-Si substrates appeared similar to those on SiN. Spectroscopic ellipsometry was used to measure the thickness of SiN films etched using the CH{sub 3}F/O{sub 2} and CH{sub 3}F/CO{sub 2} plasma beams. SiN etching rates peaked near 50% O{sub 2} addition and 73% CO{sub 2} addition. Faster etching rates were measured in CH{sub 3}F/CO{sub 2} than CH{sub 3}F/O{sub 2} plasmas above 70% O{sub 2} or CO{sub 2} addition. The etching of Si stopped after a loss of ∼3 nm, regardless of beam exposure time and %O{sub 2} or %CO{sub 2} addition, apparently due to plasma assisted oxidation of Si. An additional GeO{sub x}F{sub y} peak was observed at 32.5 eV in the Ge(3d) region, suggesting deep penetration of F into Si, under the conditions investigated.« less

Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

PubMed

Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2018-03-30

The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

A novel adhering junction in the apical ciliary apparatus of the rotifer Brachionus plicatilis (Rotifera, Monogononta).

PubMed

Dallai, R; Lupetti, P; Lane, N J

1996-10-01

Cultures of the rotifer Brachionus plicatilis were examined with regard to their interepithelial junctions after infiltration with the extracellular tracer lanthanum, freeze-fracturing or quick-freeze deep-etching. The lateral borders between ciliated cells have an unusual apical adhering junction. This apical part of their intercellular cleft looks desmosome-like, but it is characterized by unusual intramembranous E-face clusters of particles. Deep-etching reveals that these are packed together in short rows which lie parallel to one another in orderly arrays. The true membrane surface in these areas features filaments in the form of short ribbons; these are produced by projections, possibly part of the glycocalyx, emerging from the membranes, between which the electron-dense tracer lanthanum permeates. These projections appear to overlap with each other in the centre of the intercellular cleft; this would provide a particularly flexible adaptation to maintain cell-cell contact and coordination as a consequence. The filamentous ribbons may be held in position by the intramembranous particle arrays since both have a similar size and distribution. These contacts are quite different from desmosomes and appear to represent a distinct new category of adhesive cell-cell junction. Beneath these novel structures, conventional pleated septate junctions are found, exhibiting the undulating intercellular ribbons typical of this junctional type, as well as the usual parallel alignments of intramembranous rows of EF grooves and PF particles. Below these are found gap junctions as close-packed plaques of intramembranous particles on either the P-face or E-face. After freeze-fracturing, the complementary fracture face to the particles shows pits, usually on the P-face, arrayed with a very precise hexagonal pattern.

Gaseous slip flow analysis of a micromachined flow sensor for ultra small flow applications

NASA Astrophysics Data System (ADS)

Jang, Jaesung; Wereley, Steven T.

2007-02-01

The velocity slip of a fluid at a wall is one of the most typical phenomena in microscale gas flows. This paper presents a flow analysis considering the velocity slip in a capacitive micro gas flow sensor based on pressure difference measurements along a microchannel. The tangential momentum accommodation coefficient (TMAC) measurements of a particular channel wall in planar microchannels will be presented while the previous micro gas flow studies have been based on the same TMACs on both walls. The sensors consist of a pair of capacitive pressure sensors, inlet/outlet and a microchannel. The main microchannel is 128.0 µm wide, 4.64 µm deep and 5680 µm long, and operated under nearly atmospheric conditions where the outlet Knudsen number is 0.0137. The sensor was fabricated using silicon wet etching, ultrasonic drilling, deep reactive ion etching (DRIE) and anodic bonding. The capacitance change of the sensor and the mass flow rate of nitrogen were measured as the inlet-to-outlet pressure ratio was varied from 1.00 to 1.24. The measured maximum mass flow rate was 3.86 × 10-10 kg s-1 (0.019 sccm) at the highest pressure ratio tested. As the pressure difference increased, both the capacitance of the differential pressure sensor and the flow rate through the main microchannel increased. The laminar friction constant f sdot Re, an important consideration in sensor design, varied from the incompressible no-slip case and the mass sensitivity and resolution of this sensor were discussed. Using the current slip flow formulae, a microchannel with much smaller mass flow rates can be designed at the same pressure ratios.

Dry etching of metallization

NASA Technical Reports Server (NTRS)

Bollinger, D.

1983-01-01

The production dry etch processes are reviewed from the perspective of microelectronic fabrication applications. The major dry etch processes used in the fabrication of microelectronic devices can be divided into two categories - plasma processes in which samples are directly exposed to an electrical discharge, and ion beam processes in which samples are etched by a beam of ions extracted from a discharge. The plasma etch processes can be distinguished by the degree to which ion bombardment contributes to the etch process. This, in turn is related to capability for anisotropic etching. Reactive Ion Etching (RIE) and Ion Beam Etching are of most interest for etching of thin film metals. RIE is generally considered the best process for large volume, anisotropic aluminum etching.

Alignment nature of ZnO nanowires grown on polished and nanoscale etched lithium niobate surface through self-seeding thermal evaporation method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohanan, Ajay Achath; Parthiban, R.; Ramakrishnan, N., E-mail: ramakrishnan@monash.edu

Highlights: • ZnO nanowires were grown directly on LiNbO{sub 3} surface for the first time by thermal evaporation. • Self-alignment of the nanowires due to step bunching of LiNbO{sub 3} surface is observed. • Increased roughness in surface defects promoted well-aligned growth of nanowires. • Well-aligned growth was then replicated in 50 nm deep trenches on the surface. • Study opens novel pathway for patterned growth of ZnO nanowires on LiNbO{sub 3} surface. - Abstract: High aspect ratio catalyst-free ZnO nanowires were directly synthesized on lithium niobate substrate for the first time through thermal evaporation method without the use ofmore » a buffer layer or the conventional pre-deposited ZnO seed layer. As-grown ZnO nanowires exhibited a crisscross aligned growth pattern due to step bunching of the polished lithium niobate surface during the nanowire growth process. On the contrary, scratches on the surface and edges of the substrate produced well-aligned ZnO nanowires in these defect regions due to high surface roughness. Thus, the crisscross aligned nature of high aspect ratio nanowire growth on the lithium niobate surface can be changed to well-aligned growth through controlled etching of the surface, which is further verified through reactive-ion etching of lithium niobate. The investigations and discussion in the present work will provide novel pathway for self-seeded patterned growth of well-aligned ZnO nanowires on lithium niobate based micro devices.« less

Thin film fabrication and system integration test run for a microactuator for a tuneable lens

NASA Astrophysics Data System (ADS)

Hoheisel, Dominik; Rissing, Lutz

2014-03-01

An electromagnetic microactuator, for controlling of a tuneable lens, with an integrated electrostatic element is fabricated by thin film technology. The actuator consists of two parts: the first part with microcoil and flux guide and the second part with a ring shaped back iron on a polyimide membrane. The back iron is additionally useable as electrode for electrostatic measurement of the air gap and for electrostatic actuation. By attracting the back iron an optical liquid is displaced and forms a liquid lens inside the back iron ring covered by the membrane. For testing the thin film fabrication sequence, up-scaled systems are generated in a test run. To fabricate the flux guide in an easy and quick way, a Ni-Fe foil with a thickness of 50 μm is laminated on the Si-wafer. This foil is also utilized in the following fabrication sequence as seed layer for electroplating. Compared to Ni-Fe structures deposited by electroplating, the foil is featuring better soft magnetic properties. The foil is structured by wet chemical etching and the backside of the wafer is structured by deep reactive ion etching (DRIE). For post fabrication thinning, the polyimide membrane is treated by oxygen plasma etching. To align the back iron to the microcoil and the flux guide, a flip-chip-bonder is used during test run of system integration. To adjust a constant air gap, a water solvable polymer is tested. A two component epoxy and a polyimide based glue are compared for their bonding properties of the actuator parts.

Front surface structured targets for enhancing laser-plasma interactions

NASA Astrophysics Data System (ADS)

Snyder, Joseph; George, Kevin; Ji, Liangliang; Yalamanchili, Sasir; Simonoff, Ethan; Cochran, Ginevra; Daskalova, Rebecca; Poole, Patrick; Willis, Christopher; Lewis, Nathan; Schumacher, Douglass

2016-10-01

We present recent progress made using front surface structured interfaces for enhancing ultrashort, relativistic laser-plasma interactions. Structured targets can increase laser absorption and enhance ion acceleration through a number of mechanisms such as direct laser acceleration and laser guiding. We detail experimental results obtained at the Scarlet laser facility on hollow, micron-scale plasma channels for enhancing electron acceleration. These targets show a greater than three times enhancement in the electron cutoff energy as well as an increased slope temperature for the electron distribution when compared to a flat interface. Using three-dimensional particle-in-cell (PIC) simulations, we have modeled the interaction to give insight into the physical processes responsible for the enhancement. Furthermore, we have used PIC simulations to design structures that are more advantageous for ion acceleration. Such targets necessitate advanced target fabrication methods and we describe techniques used to manufacture optimized structures, including vapor-liquid-solid growth, cryogenic etching, and 3D printing using two-photon-polymerization. This material is based upon work supported by the Air Force Office of Scientific Research under Award Number FA9550-14-1-0085.

Superconducting radio-frequency cavities made from medium and low-purity niobium ingots

DOE PAGES

Ciovati, Gianluigi; Dhakal, Pashupati; Myneni, Ganapati R.

2016-04-07

Superconducting radio-frequency cavities made of ingot niobium with residual resistivity ratio (RRR) greater than 250 have proven to have similar or better performance than fine-grain Nb cavities of the same purity, after standard processing. The high purity requirement contributes to the high cost of the material. As superconducting accelerators operating in continuous-wave typically require cavities to operate at moderate accelerating gradients, using lower purity material could be advantageous not only to reduce cost but also to achieve higher Q 0-values. In this contribution we present the results from cryogenic RF tests of 1.3–1.5 GHz single-cell cavities made of ingot Nbmore » of medium (RRR = 100–150) and low (RRR = 60) purity from different suppliers. Cavities made of medium-purity ingots routinely achieved peak surface magnetic field values greater than 70 mT with an average Q 0-value of 2 × 10 10 at 2 K after standard processing treatments. As a result, the performances of cavities made of low-purity ingots were affected by significant pitting of the surface after chemical etching.« less

Fabrication of Quench Condensed Thin Films Using an Integrated MEMS Fab on a Chip

NASA Astrophysics Data System (ADS)

Lally, Richard; Reeves, Jeremy; Stark, Thomas; Barrett, Lawrence; Bishop, David

Atomic calligraphy is a microelectromechanical systems (MEMS)-based dynamic stencil nanolithography technique. Integrating MEMS devices into a bonded stacked array of three die provides a unique platform for conducting quench condensed thin film mesoscopic experiments. The atomic calligraphy Fab on a Chip process incorporates metal film sources, electrostatic comb driven stencil plate, mass sensor, temperature sensor, and target surface into one multi-die assembly. Three separate die are created using the PolyMUMPs process and are flip-chip bonded together. A die containing joule heated sources must be prepared with metal for evaporation prior to assembly. A backside etch of the middle/central die exposes the moveable stencil plate allowing the flux to pass through the stencil from the source die to the target die. The chip assembly is mounted in a cryogenic system at ultra-high vacuum for depositing extremely thin films down to single layers of atoms across targeted electrodes. Experiments such as the effect of thin film alloys or added impurities on their superconductivity can be measured in situ with this process.

Perforated plates for cryogenic regenerators and method of fabrication

DOEpatents

Hendricks, J.B.

1994-03-29

Perforated plates having very small holes with a uniform diameter throughout the plate thickness are prepared by a [open quotes]wire drawing[close quotes] process in which a billet of sacrificial metal is disposed in an extrusion can of the plate metal, and the can is extruded and restacked repeatedly, converting the billet to a wire of the desired hole diameter. At final size, the rod is then sliced into wafers, and the wires are removed by selective etching. This process is useful for plate metals of interest for high performance regenerator applications, in particular, copper, niobium, molybdenum, erbium, and other rare earth metals. Er[sub 3]Ni, which has uniquely favorable thermophysical properties for such applications, may be incorporated in regions of the plates by providing extrusion cans containing erbium and nickel metals in a stacked array with extrusion cans of the plate metal, which may be copper. The array is heated to convert the erbium and nickel metals to Er[sub 3]Ni. Perforated plates having two sizes of perforations, one of which is small enough for storage of helium, are also disclosed. 10 figures.

Perforated plates for cryogenic regenerators and method of fabrication

DOEpatents

Hendricks, John B.

1994-01-01

Perforated plates (10) having very small holes (14) with a uniform diameter throughout the plate thickness are prepared by a "wire drawing" process in which a billet of sacrificial metal is disposed in an extrusion can of the plate metal, and the can is extruded and restacked repeatedly, converting the billet to a wire of the desired hole diameter. At final size, the rod is then sliced into wafers, and the wires are removed by selective etching. This process is useful for plate metals of interest for high performance regenerator applications, in particular, copper, niobium, molybdenum, erbium, and other rare earth metals. Er.sub.3 Ni, which has uniquely favorable thermophysical properties for such applications, may be incorporated in regions of the plates by providing extrusion cans (20) containing erbium and nickel metals in a stacked array (53) with extrusion cans of the plate metal, which may be copper. The array is heated to convert the erbium and nickel metals to Er.sub.3 Ni. Perforated plates having two sizes of perforations (38, 42), one of which is small enough for storage of helium, are also disclosed.

Cryogenic engineering

NASA Astrophysics Data System (ADS)

Beliakov, V. P.

Recent developments and trends in cryogenic engineering are reviewed, with emphasis on the role of cryogenics in power generation, machine building, chemistry, and metallurgy. Several cryogenic systems are described, including air-separation apparatus, cryogenic storage systems, cryothermovacuum devices, and the cryogenic systems of superconducting devices. The theoretical principles underlying the design of cryogenic systems are examined, along with the theory for the processes involved.

Technology Demonstration Missions

NASA Technical Reports Server (NTRS)

McDougal, John; French, Raymond; Adams-Fogle, Beth; Stephens, Karen

2015-01-01

Technology Demonstration Missions (TDM) is in its third year of execution, being initiated in 2010 and baselined in January of 2012. There are 11 projects that NASA Marshall Space Flight Center (MSFC) has contributed to or led: (1) Evolvable Cryogenics (eCryo): Cyrogenic Propellant Storage and Transfer Engineering Development Unit (EDU), a proof of manufacturability effort, used to enhance knowledge and technology related to handling cryogenic propellants, specifically liquid hydrogen. (2) Composites for Exploration Upper Stage (CEUS): Design, build, test, and address flight certification of a large composite shell suitable for the second stage of the Space Launch System (SLS). (3) Deep Space Atomic Clock (DSAC): Spaceflight to demo small, low-mass atomic clock that can provide unprecedented stability for deep space navigation. (4) Green Propellant Infusion Mission (GPIM): Demo of high-performance, green propellant propulsion system suitable for Evolved Expendable Launch Vehicle (EELV) Secondary Payload Adapter (ESPA)-class spacecraft. (5) Human Exploration Telerobotics (HET): Demonstrating how telerobotics, remote control of a variety of robotic systems, can take routine, highly repetitive, dangerous or long-duration tasks out of human hands. (6) Laser Communication Relay Demo (LCRD): Demo to advance optical communications technology toward infusion into deep space and near Earth operational systems, while growing the capabilities of industry sources. (7) Low Density Supersonic Decelerator (LDSD): Demo new supersonic inflatable decelerator and parachute technologies to enable Mars landings of larger payloads with greater precision at a wider range of altitudes. (8) Mars Science Laboratory (MSL) Entry Descent & Landing Instrumentation (MEDLI): Demo of embedded sensors embedded in the MSL heat shield, designed to record the heat and atmospheric pressure experienced during the spacecraft's high-speed, hot entry in the Martian atmosphere. (9) Solar Electric Propulsion (SEP): 50-kW class spacecraft that uses flexible blanket solar arrays for power generation and an electric propulsion system that delivers payload from low-Earth orbit to higher orbits. (10) Solar Sail Demonstration (SSD): Demo to validate sail deployment techniques for solar sails that are propelled by the pressure of sunlight. (11) Terrestrial HIAD Orbit Reentry (THOR): Demo of a 3.7-m Hypersonic Inflatable Aerodynamic Decelerator (HIAD) entry vehicle to test second generation aerothermal performance and modeling.

Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

PubMed

Ozer, Fusun; Blatz, Markus B

2013-01-01

Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

Modernization of NASA's Johnson Space Center Chamber: A Liquid Nitrogen System to Support Cryogenic Vacuum Optical Testing of the James Webb Space Telescope (JWST)

NASA Technical Reports Server (NTRS)

Garcia, Sammy; Homan, Jonathan; Montz, Michael

2016-01-01

NASA is the mission lead for the James Webb Space Telescope (JWST), the next of the “Great Observatories”, scheduled for launch in 2018. It is directly responsible for the integration and test (I&T) program that will culminate in an end-to-end cryo vacuum optical test of the flight telescope and instrument module in Chamber A at NASA Johnson Space Center. Historic Chamber A is the largest thermal vacuum chamber at Johnson Space Center and one of the largest space simulation chambers in the world. Chamber A has undergone a major modernization effort to support the deep cryogenic, vacuum and cleanliness requirements for testing the JWST. This paper describes the steps performed in efforts to convert the existing the 60’s era Liquid Nitrogen System from a forced flow (pumped) process to a natural circulation (thermo-siphon) process. In addition, the paper will describe the dramatic conservation of liquid nitrogen to support the long duration thermal vacuum testing. Lastly, describe the simplistic and effective control system which results in zero to minimal human inputs during steady state conditions.

A study of GaN-based LED structure etching using inductively coupled plasma

NASA Astrophysics Data System (ADS)

Wang, Pei; Cao, Bin; Gan, Zhiyin; Liu, Sheng

2011-02-01

GaN as a wide band gap semiconductor has been employed to fabricate optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes (LDs). Recently several different dry etching techniques for GaN-based materials have been developed. ICP etching is attractive because of its superior plasma uniformity and strong controllability. Most previous reports emphasized on the ICP etching characteristics of single GaN film. In this study dry etching of GaN-based LED structure was performed by inductively coupled plasmas (ICP) etching with Cl2 as the base gas and BCl3 as the additive gas. The effects of the key process parameters such as etching gases flow rate, ICP power, RF power and chamber pressure on the etching properties of GaN-based LED structure including etching rate, selectivity, etched surface morphology and sidewall was investigated. Etch depths were measured using a depth profilometer and used to calculate the etch rates. The etch profiles were observed with a scanning electron microscope (SEM).

Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

PubMed Central

Zhan, Zhan; Li, Wei; Yu, Lingke; Wang, Lingyun; Sun, Daoheng

2017-01-01

In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching) is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement. PMID:28772521

Cryo-Vacuum Testing of the Integrated Science Instrument Module for the James Webb Space Telescope

NASA Technical Reports Server (NTRS)

Kimble, Randy A.; Davila, P. S.; Drury, M. P.; Glazer, S. D.; Krom, J. R.; Lundquist, R. A.; Mann, S. D.; McGuffey, D. B.; Perry, R. L.; Ramey, D. D.

2011-01-01

With delivery of the science instruments for the James Webb Space Telescope (JWST) to Goddard Space Flight Center (GSFC) expected in 2012, current plans call for the first cryo-vacuum test of the Integrated Science Instrument Module (ISIM) to be carried out at GSFC in early 2013. Plans are well underway for conducting this ambitious test, which will perform critical verifications of a number of optical, thermal, and operational requirements of the IS 1M hardware, at its deep cryogenic operating temperature. We describe here the facilities, goals, methods, and timeline for this important Integration & Test milestone in the JWST program.

Thermal Properties of Double-Aluminized Kapton at Low Temperatures

NASA Technical Reports Server (NTRS)

Tuttle, J.; DiPirro, M.; Canavan, E.; Hait, T.

2007-01-01

Double-aluminized kapton (DAK) is commonly used in multi-layer insulation blankets in cryogenic systems. NASA plans to use individual DAK sheets in lightweight deployable shields for satellites carrying instruments. A set of these shields will reflect away thermal radiation from the sun, the earth, and the instrument's warm side and allow the instrument's cold side to radiate its own heat to deep space. In order to optimally design such a shield system, it is important to understand the thermal characteristics of DAK down to low temperatures. We describe experiments which measured the thermal conductivity and electrical resistivity down to 4 Kelvin and the emissivity down to 10 Kelvin.

Method and apparatus of cryogenic cooling for high temperature superconductor devices

DOEpatents

Yuan, Xing; Mine, Susumu

2005-02-15

A method and apparatus for providing cryogenic cooling to HTS devices, in particular those that are used in high-voltage electric power applications. The method involves pressurizing liquid cryogen to above one atmospheric pressure to improve its dielectric strength, while sub-cooling the liquid cryogen to below its saturation temperature in order to improve the performance of the HTS components of the device. An apparatus utilizing such a cooling method consists of a vessel that contains a pressurized gaseous cryogen region and a sub-cooled liquid cryogen bath, a liquid cryogen heating coupled with a gaseous cryogen venting scheme to maintain the pressure of the cryogen to a value in a range that corresponds to optimum dielectric strength of the liquid cryogen, and a cooling system that maintains the liquid cryogen at a temperature below its boiling point to improve the performance of HTS materials used in the device.

Upper Cretaceous Shannon Sandstone Reservoirs, Powder River Basin, Wyoming: Evidence for organic acid diagenesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hansley, P.L.; Nuccio, V.F.

Comparison of the petrology of shallow and deep oil reservoirs in the Upper Cretaceous Shannon Sandstone Beds of the Steele Member of the Cody Shale strongly suggests that organic acids have had a more significant impact on the diagenetic alteration of aluminosilicate grains and carbonate cements in the deep reservoirs than in the shallow reservoirs. In shallow reservoirs, detrital grains exhibit minor dissolution, sparse and small overgrowths, and secondary porosity created by dissolution of early calcite cement. However, deeper sandstones are characterized by extensive dissolution of detrital K-feldspar and detrital glauconite grains, and precipitation of abundant, large quartz and feldsparmore » overgrowths. Throughout the Shannon and Steele, dissolution of glauconite and degradation of kerogen were probably aided by clay mineral/organic catalysis, which caused simultaneous reduction of iron and oxidation of kerogen. This process resulted in release of ferrous iron and organic acids and was promoted in the deep reservoirs by higher formation temperatures accounting for more extensive dissolution of aluminosilicate grains. Carbonic acid produced from the dissolution of early calcite cement, decarboxylation of organic matter, and influx of meteoric water after Laramide uplift produced additional dissolution of cements and grains. Dissolution by organic acids and complexing by organic acid anions, however, best explain the intensity of diagenesis and absence of dissolution products in secondary pores and on etched surfaces of framework grains in deep reservoirs.« less

Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

PubMed

Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

2016-01-01

The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

Subcooling Cryogenic Propellants for Long Duration Space Exploration

NASA Technical Reports Server (NTRS)

Mustafi, Shuvo; Canavan, Edgar; Johnson, Wesley; Kutter, Bernard; Shull, Jeff

2009-01-01

The use of cryogenic propellants such as hydrogen and oxygen is crucial for exploration of the solar system because of their superior specific impulse capability. Future missions may require vehicles with the flexibility to remain in orbit or travel in space for months, necessitating long-term storage of these cryogens. One powerful technique for easing the challenge of cryogenic fluid storage is to remove energy from tlie cryogenic propellant by isobaricly subcooling them below their normal boiling point prior to launch. The isobaric subcooling of the cryogenic propellant will be performed by using a cold pressurant to maintain the tank pressure while the cryogen's temperature is simultaneously reduced. After launch, even with the use of the best insulation systems, heat will leak into the cold cryogenic propellant tank. However, the large heat capacity available in highly subcooled cryogenic propellants allows them to absorb the energy that leaks into the tank until the cryogen reaches its operational thermodynamic condition. During this period of heating of the subcooled cryogen there will be no loss of the propellant due to venting for pressure control. This simple technique can extend the operational life of a spacecraft or an orbital cryogenic depot many months with minimal mass penalty. Subcooling technologies for cryogenic propellants would thus provide the Exploration Systems Mission Directorate with an enhanced level of mission flexibility. However, there are a few challenges associated with subcooling cryogenic propellants since compact subcooling ground support equipment has not been demonstrated. This paper explores the beneficial impact of subcooling cryogenic propellants on the launch pad for long-term cryogenic propellant storage in space and proposes a novel method for implementing subcooling of cryogenic propellants for spacecraft such as the Ares V Earth Departure Stage (EDS). Analysis indicates that with a careful strategy to handle the subcooled cryogen it would be possible to store cryogenic propellants in space for many months without venting. A concept for subcooling the cryogenic propellant relatively quickly and inexpensively on the launch pad - the thermodynamic cryogen subcooler (TCS) - will be presented. Important components of the TCS and an associated subcooled cryogen tank (SCT) will be discussed in this paper. Results from a preliminary thermodynamic model of the performance of a TCS for an EDS sized hydrogen tank will also be presented.

Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-04-01

The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

Wafer level fabrication of single cell dispenser chips with integrated electrodes for particle detection

NASA Astrophysics Data System (ADS)

Schoendube, Jonas; Yusof, Azmi; Kalkandjiev, Kiril; Zengerle, Roland; Koltay, Peter

2015-02-01

This work presents the microfabrication and experimental evaluation of a dispenser chip, designed for isolation and printing of single cells by combining impedance sensing and drop-on-demand dispensing. The dispenser chip features 50  ×  55 µm (width × height) microchannels, a droplet generator and microelectrodes for impedance measurements. The chip is fabricated by sandwiching a dry film photopolymer (TMMF) between a silicon and a Pyrex wafer. TMMF has been used to define microfluidic channels, to serve as low temperature (75 °C) bonding adhesive and as etch mask during 300 µm deep HF etching of the Pyrex wafer. Due to the novel fabrication technology involving the dry film resist, it became possible to fabricate facing electrodes at the top and bottom of the channel and to apply electrical impedance sensing for particle detection with improved performance. The presented microchip is capable of dispensing liquid and detecting microparticles via impedance measurement. Single polystyrene particles of 10 µm size could be detected with a mean signal amplitude of 0.39  ±  0.13 V (n=439 ) at particle velocities of up to 9.6 mm s-1 inside the chip.

Novel 3D micromirror for miniature optical bio-robe SiOB assembly

NASA Astrophysics Data System (ADS)

Singh, Janak; Xu, Yingshun; Premachandran, C. S.; Jason, Teo Hui Siang; Chen, Nanguang

2008-02-01

This article presents design and development of a novel 3D micromirror for large deflection scanning application in invivo optical coherence tomography (OCT) bio-imaging probe. Overall mirror chip size is critical to reduce the diameter of the probe; however, mirror plate itself should not be less than 500 μm as smaller size means reducing the amount of light collected after scattering for OCT imaging. In this study, mirror chip sizes of 1 × 1 mm2 and 1.5 × 1.5 mm2 were developed with respectively 400 and 500 micrometer diameter mirror plates. The design includes electro thermal excitation mechanism in the same plane as mirror plate to achieve 3D free space scanning. Larger deflection requires longer actuators, which usually increase the overall size of the chip. To accommodate longer actuators and keep overall chip size same curved beam actuators are designed and integrated for micromirror scanning. Typical length of the actuators was 800 micrometer, which provided up to 17 degrees deflection. Deep reactive ion etching (DRIE) process module was used extensively to etch high aspect ratio structures and keep the total mirror chip size small.

High strength fused silica flexures manufactured by femtosecond laser

NASA Astrophysics Data System (ADS)

Bellouard, Yves; Said, Ali A.; Dugan, Mark; Bado, Philippe

2009-02-01

Flexures are mechanical elements used in micro- and precision-engineering to precisely guide the motion of micro-parts. They consist of slender bodies that deform elastically upon the application of a force. Although counter-intuitive at first, fused silica is an attractive material for flexure. Pending that the machining process does not introduce surface flaws that would lead to catastrophic failure, the material has a theoretically high ultimate tensile strength of several GPa. We report on high-aspect ratio fused silica flexures manufactured by femtosecond laser combined with chemical etching. Notch-hinges with thickness as small as twenty microns and aspect ratios comparable to aspect ratios obtained by Deep- Reactive-Ion-Etching (DRIE) were fabricated and tested under different loading conditions. Multiple fracture tests were performed for various loading conditions and the cracks morphologies were analyzed using Scanning Electron Microscopy. The manufactured elements show outstanding mechanical properties with flexural strengths largely exceeding those obtained with other technologies and materials. Fused silica flexures offer a mean to combine integrated optics with micro-mechanics in a single monolithic substrate. Waveguides and mechanical elements can be combined in a monolithic devices opening new opportunities for integrated opto-mechatronics devices.

Design considerations for the beamwaveguide retrofit of a ground antenna station

NASA Technical Reports Server (NTRS)

Veruttipong, T.; Withington, J.; Galindo-Israel, V.; Imbriale, W.; Bathker, D.

1987-01-01

A primary requirement of the NASA Deep Space Network (DSN) is to provide for optimal reception of very low signal levels. This requirement necessitates optimizing the antenna gain to the total system operating noise level quotient. Low overall system noise levels of 16 to 20 K are achieved by using cryogenically cooled preamplifiers closely coupled with an appropriately balanced antenna gain/spillover design. Additionally, high-power transmitters (up to 400 kW CW) are required for spacecraft emergency command and planetary radar experiments. The frequency bands allocated for deep space telemetry are narrow bands near 2.1 and 2.3 GHz (Ka-band), 7.1 and 8.4 GHz (X-band), and 32 and 34.5 GHz (Ka-band). In addition, planned operations for the Search for Extraterrestrial Intelligence (SETI) program require continuous low-noise receive coverage over the 1 to 10 GHz band. To summarize, DSN antennas must operate efficiently with low receive noise and high-power uplink over the 1 to 35 GHz band.

Composite-Material Tanks with Chemically Resistant Liners

NASA Technical Reports Server (NTRS)

DeLay, Thomas K.

2004-01-01

Lightweight composite-material tanks with chemically resistant liners have been developed for storage of chemically reactive and/or unstable fluids . especially hydrogen peroxide. These tanks are similar, in some respects, to the ones described in gLightweight Composite-Material Tanks for Cryogenic Liquids h (MFS-31379), NASA Tech Briefs, Vol. 25, No. 1 (January, 2001), page 58; however, the present tanks are fabricated by a different procedure and they do not incorporate insulation that would be needed to prevent boil-off of cryogenic fluids. The manufacture of a tank of this type begins with the fabrication of a reusable multisegmented aluminum mandrel in the shape and size of the desired interior volume. One or more segments of the mandrel can be aluminum bosses that will be incorporated into the tank as end fittings. The mandrel is coated with a mold-release material. The mandrel is then heated to a temperature of about 400 F (approximately equal to 200 C) and coated with a thermoplastic liner material to the desired thickness [typically approxiamtely equal to 15 mils (approximately equal to 0.38 mm)] by thermal spraying. In the thermal-spraying process, the liner material in powder form is sprayed and heated to the melting temperature by a propane torch and the molten particles land on the mandrel. The sprayed liner and mandrel are allowed to cool, then the outer surface of the liner is chemically and/or mechanically etched to enhance bonding of a composite overwrap. The etched liner is wrapped with multiple layers of an epoxy resin reinforced with graphite fibers; the wrapping can be done either by manual application of epoxy-impregnated graphite cloth or by winding of epoxy-impregnated filaments. The entire assembly is heated in an autoclave to cure the epoxy. After the curing process, the multisegmented mandrel is disassembled and removed from inside, leaving the finished tank. If the tank is to be used for storing hydrogen peroxide, then the liner material should be fluorinated ethylene/propylene (FEP), and one or more FEP O ring(s) should be used in the aluminum end fitting(s). This choice of materials is dictated by experimental observations that pure aluminum and FEP are the only materials suitable for long-term storage of hydrogen peroxide and that other materials tend to catalyze the decomposition of hydrogen peroxide to oxygen and water. Other thermoplastic liner materials that are suitable for some applications include nylon 6 and polyethylene. The processing temperatures for nylon 6 are lower than those for FEP. Nylon 6 is compatible with propane, natural gas, and other petroleum-based fuels. Polyethylene is compatible with petroleum- based products and can be used for short-term storage of hydrogen peroxide.

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

NASA Astrophysics Data System (ADS)

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

2015-03-01

Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

Aggressiveness of contemporary self-etching adhesives. Part II: etching effects on unground enamel.

PubMed

Pashley, D H; Tay, F R

2001-09-01

The aggressiveness of three self-etching adhesives on unground enamel was investigated. Ultrastructural features and microtensile bond strength were examined, first using these adhesives as both the etching and resin-infiltration components, and then examining their etching efficacy alone through substitution of the proprietary resins with the same control resins. For SEM examination, buccal, mid-coronal, unground enamel from human extracted bicuspids were etched with either Clearfil Mega Bond (Kuraray), Non-Rinse Conditioner (NRC; Dentsply DeTrey) or Prompt L-Pop (ESPE). Those in the control group were etched with 32% phosphoric acid (Bisco) for 15s. They were all rinsed off prior to examination of the etching efficacy. For TEM examination, the self-etching adhesives were used as recommended. Unground enamel treated with NRC were further bonded using Prime&Bond NT (Dentsply), while those in the etched, control group were bonded using All-Bond 2 (Bisco). Completely demineralized, resin replicas were embedded in epoxy resin for examination of the extent of resin infiltration. For microtensile bond strength evaluation, specimens were first etched and bonded using the self-etching adhesives. A second group of specimens were etched with the self-etching adhesives, rinsed but bonded using a control adhesive. Following restoration with Z100 (3M Dental Products), they were sectioned into beams of uniform cross-sectional areas and stressed to failure. Etching patterns of aprismatic enamel, as revealed by SEM, and the subsurface hybrid layer morphology, as revealed by TEM, varied according to the aggressiveness of the self-etching adhesives. Clearfil Mega Bond exhibited the mildest etching patterns, while Prompt L-Pop produced an etching effect that approached that of the total-etch control group. Microtensile bond strength of the three experimental groups were all significantly lower than the control group, but not different from one another. When the self-etching adhesives were replaced with the control adhesive after etching, bond strengths of NRC/Prime&Bond NT and Prompt L-Pop were not significantly different from that of the control group, but were significantly higher than that of Clearfil Mega Bond. Both etching efficacy and strength of the resins are important contributing factors in bonding of self-etching adhesives to unground enamel.

VizieR Online Data Catalog: Improved multi-band photometry from SERVS (Nyland+, 2017)

NASA Astrophysics Data System (ADS)

Nyland, K.; Lacy, M.; Sajina, A.; Pforr, J.; Farrah, D.; Wilson, G.; Surace, J.; Haussler, B.; Vaccari, M.; Jarvis, M.

2017-07-01

The Spitzer Extragalactic Representative Volume Survey (SERVS) sky footprint includes five well-studied astronomical deep fields with abundant multi-wavelength data spanning an area of ~18deg2 and a co-moving volume of ~0.8Gpc3. The five deep fields included in SERVS are the XMM-LSS field, Lockman Hole (LH), ELAIS-N1 (EN1), ELAIS-S1 (ES1), and Chandra Deep Field South (CDFS). SERVS provides NIR, post-cryogenic imaging in the 3.6 and 4.5um Spitzer/IRAC bands to a depth of ~2uJy. IRAC dual-band source catalogs generated using traditional catalog extraction methods are described in Mauduit+ (2012PASP..124..714M). The Spitzer IRAC data are complemented by ground-based NIR observations from the VISTA Deep Extragalactic Observations (VIDEO; Jarvis+ 2013MNRAS.428.1281J) survey in the south in the Z, Y, J, H, and Ks bands and UKIRT Infrared Deep Sky Survey (UKIDSS; Lawrence+ 2007, see II/319) in the north in the J and K bands. SERVS also provides substantial overlap with infrared data from SWIRE (Lonsdale+ 2003PASP..115..897L) and the Herschel Multitiered Extragalactic Survey (HerMES; Oliver+ 2012, VIII/95). As shown in Figure 1, one square degree of the XMM-LSS field overlaps with ground-based optical data from the Canada-France-Hawaii Telescope Legacy Survey Deep field 1 (CFHTLS-D1). The CFHTLS-D1 region is centered at RAJ2000=02:25:59, DEJ2000=-04:29:40 and includes imaging through the filter set u', g', r', i', and z'. Thus, in combination with the NIR data from SERVS and VIDEO that overlap with the CFHTLS-D1 region, multi-band imaging over a total of 12 bands is available. (2 data files).

Temperature-Dependent Nanofabrication on Silicon by Friction-Induced Selective Etching.

PubMed

Jin, Chenning; Yu, Bingjun; Xiao, Chen; Chen, Lei; Qian, Linmao

2016-12-01

Friction-induced selective etching provides a convenient and practical way for fabricating protrusive nanostructures. A further understanding of this method is very important for establishing a controllable nanofabrication process. In this study, the effect of etching temperature on the formation of protrusive hillocks and surface properties of the etched silicon surface was investigated. It is found that the height of the hillock produced by selective etching increases with the etching temperature before the collapse of the hillock. The temperature-dependent selective etching rate can be fitted well by the Arrhenius equation. The etching at higher temperature can cause rougher silicon surface with a little lower elastic modulus and hardness. The contact angle of the etched silicon surface decreases with the etching temperature. It is also noted that no obvious contamination can be detected on silicon surface after etching at different temperatures. As a result, the optimized condition for the selective etching was addressed. The present study provides a new insight into the control and application of friction-induced selective nanofabrication.

Knudsen pump produced via silicon deep RIE, thermal oxidation, and anodic bonding processes for on-chip vacuum pumping

NASA Astrophysics Data System (ADS)

Van Toan, Nguyen; Inomata, Naoki; Trung, Nguyen Huu; Ono, Takahito

2018-05-01

This work describes the fabrication and evaluation of the Knudsen pump for on-chip vacuum pumping that works based on the principle of a thermal transpiration. Three AFM (atomic force microscope) cantilevers are integrated into small chambers with a size of 5 mm  ×  3 mm  ×  0.4 mm for the pump’s evaluation. Knudsen pump is fabricated using deep RIE (reactive ion etching), wet thermal oxidation and anodic bonding processes. The fabricated device is evaluated by monitoring the quality (Q) factor of the integrated cantilevers. The Q factor of the cantilever is increased from 300 -1150 in cases without and with a temperature difference approximately 25 °C between the top (the hot side at 40 °C) and bottom (the cold side at 15 °C) sides of the fabricated device, respectively. The evacuated chamber pressure of around 10 kPa is estimated from the Q factor of the integrated cantilevers.

Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption.

PubMed

Hung, Yung-Jr; Lee, San-Liang; Coldren, Larry A

2010-03-29

Tapered silicon photonic crystals (PhCs) with smooth sidewalls are realized using a novel single-step deep reactive ion etching. The PhCs can significantly reduce the surface reflection over the wavelength range between the ultra-violet and near-infrared regions. From the measurements using a spectrophotometer and an angle-variable spectroscopic ellipsometer, the sub-wavelength periodic structure can provide a broad and angular-independent antireflective window in the visible region for the TE-polarized light. The PhCs with tapered rods can further reduce the reflection due to a gradually changed effective index. On the other hand, strong optical resonances for TM-mode can be found in this structure, which is mainly due to the existence of full photonic bandgaps inside the material. Such resonance can enhance the optical absorption inside the silicon PhCs due to its increased optical paths. With the help of both antireflective and absorption-enhanced characteristics in this structure, the PhCs can be used for various applications.

Information on stress conditions in the oceanic crust from oval fractures in a deep borehole

USGS Publications Warehouse

Morin, R.H.

1990-01-01

Oval images etched into the wall of a deep borehole were detected in DSDP Hole 504B, eastern equatorial Pacific Ocean, from analysis of an acoustic televiewer log. A systematic inspection of these ovals has identified intriguing consistencies in appearance that cannot be explained satisfactorily by a random, coincidental distribution of pillow lavas. As an alternative hypothesis, Mohr-Coulomb failure criterion is used to account for the generation and orientation of similarly curved, stress-induced fractures. Consequently, these oval features can be interpreted as fractures and related directly to stress conditions in the oceanic crust at this site. The azimuth of the oval center corresponds to the orientation of maximum horizontal principal stress (SH), and the oval width, which spans approximately 180?? of the borehole, is aligned with the azimuth of minimum horizontal principal stress (Sh). The oval height is controlled by the fracture angle and thus is a function of the coefficient of internal friction of the rock. -from Author

Advances in cryogenic engineering. Vols. 37A & 37B - Proceedings of the 1991 Cryogenic Engineering Conference, Univ. of Alabama, Huntsville, June 11-14, 1991

NASA Technical Reports Server (NTRS)

Fast, Ronald W. (Editor)

1991-01-01

The present volume on advances in cryogenic engineering discusses heat and mass transfer in helium, heat transfer in cryogenic fluids, thermoacoustic oscillations, and insulation. Attention is given to applications of superconductivity with reference to magnetic stability and coil protection, cryogenic techniques, and refrigeration for electronics and superconducting systems. Topics addressed include compressors, expanders, and pumps for liquid helium, magnetic refrigerators, pulse tube refrigerators, and cryocoolers. Also examined are properties of cryogenic fluids, cryogenic applications in transportion and space science and technology, and cryogenic instrumentation.

Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

NASA Technical Reports Server (NTRS)

Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

1975-01-01

Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

Investigation of Nitride Morphology After Self-Aligned Contact Etch

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

2001-01-01

Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

NASA Astrophysics Data System (ADS)

Mueller, Mark; Komarov, Serguie; Baik, Ki-Ho

2002-07-01

Photo mask etching for the 100nm technology node places new requirements on dry etching processes. As the minimum-size features on the mask, such as assist bars and optical proximity correction (OPC) patterns, shrink down to 100nm, it is necessary to produce etch CD biases of below 20nm in order to reproduce minimum resist features into chrome with good pattern fidelity. In addition, vertical profiles are necessary. In previous generations of photomask technology, footing and sidewall profile slope were tolerated, since this dry etch profile was an improvement from wet etching. However, as feature sizes shrink, it is extremely important to select etch processes which do not generate a foot, because this will affect etch linearity and also limit the smallest etched feature size. Chemically amplified resist (CAR) from TOK is patterned with a 50keV MEBES eXara e-beam writer, allowing for patterning of small features with vertical resist profiles. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. Chrome etch process development has been performed using Design of Experiments to optimize parameters such as sidewall profile, etch CD bias, etch CD linearity for varying sizes of line/space patterns, etch CD linearity for varying sizes of isolated lines and spaces, loading effects, and application to contact etching.

Cooling of superconducting devices by liquid storage and refrigeration unit

DOEpatents

Laskaris, Evangelos Trifon; Urbahn, John Arthur; Steinbach, Albert Eugene

2013-08-20

A system is disclosed for cooling superconducting devices. The system includes a cryogen cooling system configured to be coupled to the superconducting device and to supply cryogen to the device. The system also includes a cryogen storage system configured to supply cryogen to the device. The system further includes flow control valving configured to selectively isolate the cryogen cooling system from the device, thereby directing a flow of cryogen to the device from the cryogen storage system.

The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

PubMed

Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

2016-01-01

The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

NASA Astrophysics Data System (ADS)

Li, Kun-Dar; Miao, Jin-Ru

2018-02-01

To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, <100> and <111> preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

NASA Astrophysics Data System (ADS)

Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

2017-12-01

In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

Introduction of pre-etch deposition techniques in EUV patterning

NASA Astrophysics Data System (ADS)

Xiang, Xun; Beique, Genevieve; Sun, Lei; Labonte, Andre; Labelle, Catherine; Nagabhirava, Bhaskar; Friddle, Phil; Schmitz, Stefan; Goss, Michael; Metzler, Dominik; Arnold, John

2018-04-01

The thin nature of EUV (Extreme Ultraviolet) resist has posed significant challenges for etch processes. In particular, EUV patterning combined with conventional etch approaches suffers from loss of pattern fidelity in the form of line breaks. A typical conventional etch approach prevents the etch process from having sufficient resist margin to control the trench CD (Critical Dimension), minimize the LWR (Line Width Roughness), LER (Line Edge Roughness) and reduce the T2T (Tip-to-Tip). Pre-etch deposition increases the resist budget by adding additional material to the resist layer, thus enabling the etch process to explore a wider set of process parameters to achieve better pattern fidelity. Preliminary tests with pre-etch deposition resulted in blocked isolated trenches. In order to mitigate these effects, a cyclic deposition and etch technique is proposed. With optimization of deposition and etch cycle time as well as total number of cycles, it is possible to open the underlying layers with a beneficial over etch and simultaneously keep the isolated trenches open. This study compares the impact of no pre-etch deposition, one time deposition and cyclic deposition/etch techniques on 4 aspects: resist budget, isolated trench open, LWR/LER and T2T.

Design of Superconducting Gravity Gradiometer Cryogenic System for Mars Mission

NASA Technical Reports Server (NTRS)

Li, X.; Lemoine, F. G.; Paik, H. J.; Zagarola, M.; Shirron, P. J.; Griggs, C. E.; Moody, M. V.; Han, S.-C.

2016-01-01

Measurement of a planet's gravity field provides fundamental information about the planet's mass properties. The static gravity field reveals information about the internal structure of the planet, including crustal density variations that provide information on the planet's geological history and evolution. The time variations of gravity result from the movement of mass inside the planet, on the surface, and in the atmosphere. NASA is interested in a Superconducting Gravity Gradiometer (SGG) with which to measure the gravity field of a planet from orbit. An SGG instrument is under development with the NASA PICASSO program, which will be able to resolve the Mars static gravity field to degree 200 in spherical harmonics, and the time-varying field on a monthly basis to degree 20 from a 255 x 320 km orbit. The SGG has a precision two orders of magnitude better than the electrostatic gravity gradiometer that was used on the ESA's GOCE mission. The SGG operates at the superconducting temperature lower than 6 K. This study developed a cryogenic thermal system to maintain the SGG at the design temperature in Mars orbit. The system includes fixed radiation shields, a low thermal conductivity support structure and a two-stage cryocooler. The fixed radiation shields use double aluminized polyimide to emit heat from the warm spacecraft into the deep space. The support structure uses carbon fiber reinforced plastic, which has low thermal conductivity at cryogenic temperature and very high stress. The low vibration cryocooler has two stages, of which the high temperature stage operates at 65 K and the low temperature stage works at 6 K, and the heat rejection radiator works at 300 K. The study also designed a second option with a 4-K adiabatic demagnetization refrigerator (ADR) and two-stage 10-K turbo-Brayton cooler.

Design of Superconducting Gravity Gradiometer Cryogenic System for Mars Mission

NASA Technical Reports Server (NTRS)

Li, X.; Lemoine, F. G.; Shirron, P. J.; Paik, H. J.; Griggs, C. E.; Moody, M. V.; Han, S. C.; Zagarola, M.

2016-01-01

Measurement of a planets gravity field provides fundamental information about the planets mass properties. The static gravity field reveals information about the internal structure of the planet, including crustal density variations that provide information on the planets geological history and evolution. The time variations of gravity result from the movement of mass inside the planet, on the surface, and in the atmosphere. NASA is interested in a Superconducting Gravity Gradiometer (SGG) with which to measure the gravity field of a planet from orbit. An SGG instrument is under development with the NASA PICASSO program, which will be able to resolve the Mars static gravity field to degree 200 in spherical harmonics, and the time-varying field on a monthly basis to degree 20 from a 255 x 320 km orbit. The SGG has a precision two orders of magnitude better than the electrostatic gravity gradiometer that was used on the ESAs GOCE mission. The SGG operates at the superconducting temperature lower than 6 K. This study developed a cryogenic thermal system to maintain the SGG at the design temperature in Mars orbit. The system includes fixed radiation shields, a low thermal conductivity support structure and a two-stage cryocooler. The fixed radiation shields use double aluminized polyimide to emit heat from the warm spacecraft into the deep space. The support structure uses carbon fiber reinforced plastic, which has low thermal conductivity at cryogenic temperature and very high stress. The low vibration cryocooler has two stages, of which the high temperature stage operates at 65 K and the low temperature stage works at 6 K, and the heat rejection radiator works at 300 K. The study also designed a second option with a 4-K adiabatic demagnetization refrigerator (ADR) and two-stage 10-K turbo-Brayton cooler.

Subcooling for Long Duration In-Space Cryogenic Propellant Storage

NASA Technical Reports Server (NTRS)

Mustafi, Shuvo; Johnson, Wesley; Kashani, Ali; Jurns, John; Kutter, Bernard; Kirk, Daniel; Shull, Jeff

2010-01-01

Cryogenic propellants such as hydrogen and oxygen are crucial for exploration of the solar system because of their superior specific impulse capability. Future missions may require vehicles to remain in space for months, necessitating long-term storage of these cryogens. A Thermodynamic Cryogen Subcooler (TCS) can ease the challenge of cryogenic fluid storage by removing energy from the cryogenic propellant through isobaric subcooling of the cryogen below its normal boiling point prior to launch. The isobaric subcooling of the cryogenic propellant will be performed by using a cold pressurant to maintain the tank pressure while the cryogen's temperature is simultaneously reduced using the TCS. The TCS hardware will be integrated into the launch infrastructure and there will be no significant addition to the launched dry mass. Heat leaks into all cryogenic propellant tanks, despite the use of the best insulation systems. However, the large heat capacity available in the subcooled cryogenic propellants allows the energy that leaks into the tank to be absorbed until the cryogen reaches its operational thermodynamic condition. During this period of heating of the subcooled cryogen there will be minimal loss of the propellant due to venting for pressure control. This simple technique can extend the operational life of a spacecraft or an orbital cryogenic depot for months with minimal mass penalty. In fact isobaric subcooling can more than double the in-space hold time of liquid hydrogen compared to normal boiling point hydrogen. A TCS for cryogenic propellants would thus provide an enhanced level of mission flexibility. Advances in the important components of the TCS will be discussed in this paper.

Influence of water storage on fatigue strength of self-etch adhesives.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2015-12-01

The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

Research and Development Toward Massive Liquid Argon Time Projection Chambers for Neutrino Detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thiesse, Matthew

Liquid argon (LAr) time projection chambers (TPC) have rapidly increased in importance as particle detectors throughout the past four decades. While much research has been completed, there are still many areas which require further development to build and operate the next generation LAr TPC experiment, such as the Deep Underground Neutrino Experiment (DUNE). These include high voltage breakdown, argon purification and purity monitoring, and vacuum ultraviolet (VUV) scintillation light measurement. Visual monitoring of high voltage breakdown is helpful in allowing assessment of the performance of high voltage component design. Thus, a system of cryogenic cameras, the first of its kind,more » was developed for use in a large LAr cryostat, without the need for additional electronics heating. The system functioned without problem for 50 days at cryogenic temperature, with some degradation of image quality, and provided a useful monitor for the DUNE 35-ton cryogenics systems. The system did not observe any high voltage breakdowns during the run. Further development of the concept is ongoing for future installation in other experiments. The monitoring of LAr purity using TPC data is a fundamental study for LAr TPC experiments. However, the study has not been performed for a large LAr TPC in the presence of high electronic noise. Custom software was developed and validated for the accurate reconstruction of signals in noisy TPC data. The results of the reconstruction were used to successfully measure the LAr electron lifetime with an uncertainty comparable to alternate methods of measurement. The electron lifetime of the 35-ton Phase II run is determined to be 4.12 ± 0.17 (stat.) ±0.40 (syst.) ms. For general purpose research and development of high purity LAr as a particle detection medium, a dedicated test stand was designed, constructed, and commissioned. The system is used to test the gaseous photomultiplier (GPM) performance at cryogenic temperatures. The GPM functions with photoelectron multiplication at 77 K, at a reduced gain. Further study is required to show the detector’s direct sensitivity to LAr VUV scintillation light.« less

Cryogenic phased-array for high resolution magnetic resonance imaging (MRI); assessment of clinical and research applications

NASA Astrophysics Data System (ADS)

Ip, Flora S.

Magnetic Resonance (MR) imaging is one of the most powerful tools in diagnostic medicine for soft tissue imaging. Image acquisition techniques and hardware receivers are very important in achieving high contrast and high resolution MR images. An aim of this dissertation is to design single and multi-element room and cryogenic temperature arrays and make assessments of their signal-to-noise ratio (SNR) and SNR gain. In this dissertation, four sets of MR receiver coils are built. They are the receiver-only cryo-coils that are not commercially available. A tuning and matching circuit is attached to each coil. The tuning and matching circuits are simple; however, each device component has to operate at a high magnetic field and cryogenic temperature environment. Remote DC bias of the varactor controls the tuning and matching outside the scanner room. Active detuning of the resonator is done by two p-i-n junction (PIN) diodes. Cooling of the receiver is done by a customized liquid nitrogen cryostat. The first application is to build a 3-Tesla 2x1 horseshoe counter-rotating current (CRC) cryogenic array to image the tibia in a human body. With significant increase in SNR, the surface coil should deliver high contrast and resolution images that can show the trabecular bone and bone marrow structure. This structural image will be used to model the mechanical strength of the bone as well as bone density and chance of fracture. The planar CRC is a unique design of this surface array. The second application is to modify the coil design to 7-Tesla to study the growth of infant rhesus monkey eyes. Fast scan MR images of the infant monkey heads are taken for monitoring shapes of their eyeballs. The monkeys are induced with shortsightedness by eye lenses, and they are scanned periodically to get images of their eyeballs. The field-of-view (FOV) of these images is about five centimeters and the area of interest is two centimeters deep from the surface. Because of these reasons, the MR counter-rotating current coil is sufficient and demonstrated its simplicity over a phased array in this application.

Depth of Etch Comparison Between Self-limiting and Traditional Etchant Systems

DTIC Science & Technology

2016-06-18

two different etchants (Ultradent’s Opal Etch 35%, a self-limiting phosphoric acid, or 34% Tooth Conditioning Gel by Dentsply) at varied time... Opal versus Dentsply and there was also a significant difference between etch time. There is no significant difference between the interaction of...etch material and etch time. Conclusion: The depth of etch of Opal etchant was consistently less than Dentsply etchant but continued to etch and

Effect of Reduced Phosphoric Acid Pre-etching Times 
on Enamel Surface Characteristics and Shear Fatigue Strength Using Universal Adhesives.

PubMed

Tsujimoto, Akimasa; Fischer, Nicholas; Barkmeier, Wayne; Baruth, Andrew; Takamizawa, Toshiki; Latta, Mark; Miyazaki, Masashi

2017-01-01

To examine the effect of reduced phosphoric acid pre-etching times on enamel fatigue bond strength of universal adhesives and surface characteristics by using atomic force microscopy (AFM). Three universal adhesives were used in this study (Clearfil Universal Bond [C], G-Premio Bond [GP], Scotchbond Universal Adhesive [SU]). Four pre-etching groups were employed: enamel pre-etched with phosphoric acid and immediately rinsed with an air-water spray, and enamel pre-etched with phosphoric acid for 5, 10, or 15 s. Ground enamel was used as the control group. For the initial bond strength test, 15 specimens per etching group for each adhesive were used. For the shear fatigue test, 20 specimens per etching group for each adhesive were loaded using a sine wave at a frequency of 20 Hz for 50,000 cycles or until failure occurred. Initial shear bond strengths and fatigue shear strengths of composite adhesively bonded to ground and pre-etched enamel were determined. AFM observations of ground and pre-etched enamel were also conducted, and surface roughness as well as surface area were evaluated. The initial shear bond strengths and fatigue shear strengths of the universal adhesives in the pre-etched groups were significantly higher than those of the control group, and were not influenced by the pre-etching time. Significantly higher surface roughness and surface area of enamel surfaces in pre-etched groups were observed compared with those in the control group. While the surface area was not significantly influenced by etching time, surface roughness of the enamel surfaces in the pre-etched groups significantly increased with pre-etching time. The results of this in vitro study suggest that reduced phosphoric acid pre-etching times do not impair the fatigue bond strength of universal adhesives. Although fatigue bond strength and surface area were not influenced by phosphoric-acid etching times, surface roughness increased with increasing etching time.

Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells

PubMed Central

Hüpkes, Jürgen; Owen, Jorj I; Pust, Sascha E; Bunte, Eerke

2012-01-01

Abstract Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided. PMID:22162035

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

PubMed

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

Cryogen spray cooling: Effects of droplet size and spray density on heat removal.

PubMed

Pikkula, B M; Torres, J H; Tunnell, J W; Anvari, B

2001-01-01

Cryogen spray cooling (CSC) is an effective method to reduce or eliminate non-specific injury to the epidermis during laser treatment of various dermatological disorders. In previous CSC investigations, fuel injectors have been used to deliver the cryogen onto the skin surface. The objective of this study was to examine cryogen atomization and heat removal characteristics of various cryogen delivery devices. Various cryogen delivery device types including fuel injectors, atomizers, and a device currently used in clinical settings were investigated. Cryogen mass was measured at the delivery device output orifice. Cryogen droplet size profiling for various cryogen delivery devices was estimated by optically imaging the droplets in flight. Heat removal for various cryogen delivery devices was estimated over a range of spraying distances by temperature measurements in an skin phantom used in conjunction with an inverse heat conduction model. A substantial range of mass outputs were measured for the cryogen delivery devices while heat removal varied by less than a factor of two. Droplet profiling demonstrated differences in droplet size and spray density. Results of this study show that variation in heat removal by different cryogen delivery devices is modest despite the relatively large difference in cryogen mass output and droplet size. A non-linear relationship between heat removal by various devices and droplet size and spray density was observed. Copyright 2001 Wiley-Liss, Inc.

Tuning micropillar tapering for optimal friction performance of thermoplastic gecko-inspired adhesive.

PubMed

Kim, Yongkwan; Chung, Yunsie; Tsao, Angela; Maboudian, Roya

2014-05-14

We present a fabrication method and friction testing of a gecko-inspired thermoplastic micropillar array with control over the tapering angle of the pillar sidewall. A combination of deep reactive ion etching of vertical silicon pillars and subsequent maskless chemical etching produces templates with various widths and degrees of taper, which are then replicated with low-density polyethylene. As the silicon pillars on the template are chemically etched in a bath consisting of hydrofluoric acid, nitric acid, and acetic acid (HNA), the pillars are progressively thinned, then shortened. The replicated polyethylene pillar arrays exhibit a corresponding increase in friction as the stiffness is reduced with thinning and then a decrease in friction as the stiffness is again increased. The dilution of the HNA bath in water influences the tapering angle of the silicon pillars. The friction of the replicated pillars is maximized for the taper angle that maximizes the contact area at the tip which in turn is influenced by the stiffness of the tapered pillars. To provide insights on how changes in microscale geometry and contact behavior may affect friction of the pillar array, the pillars are imaged by scanning electron microscopy after friction testing, and the observed deformation behavior from shearing is related to the magnitude of the macroscale friction values. It is shown that the tapering angle critically changes the pillar compliance and the available contact area. Simple finite element modeling calculations are performed to support that the observed deformation is consistent with what is expected from a mechanical analysis. We conclude that friction can be maximized via proper pillar tapering with low stiffness that still maintains enough contact area to ensure high adhesion.

Effect of CO2 laser on root caries inhibition around composite restorations: an in vitro study.

PubMed

de Melo, Jociana Bandeira; Hanashiro, Fernando Seishim; Steagall, Washington; Turbino, Miriam Lacalle; Nobre-dos-Santos, Marinês; Youssef, Michel Nicolau; de Souza-Zaroni, Wanessa Christine

2014-03-01

The aim of the present study was to investigate the in vitro effect of CO2 laser on the inhibition of root surface demineralization around composite resin restorations. For this purpose, 30 blocks obtained from human molar roots were divided into three groups: group 1 (negative control), cavity prepared with cylindrical diamond bur + acid etching + adhesive + composite resin restoration; group 2, cavity prepared with cylindrical diamond bur + CO2 laser (5.0 J/cm(2)) + acid etching + adhesive + composite resin; and group 3, cavity prepared with cylindrical diamond bur + CO2 laser (6.0 J/cm(2)) + acid etching + adhesive + composite resin. After this procedure, the blocks were submitted to thermal and pH cycling. Root surface demineralization around the restorations was measured by microhardness analysis. The hardness results of the longitudinally sectioned root surface were converted into percentage of mineral volume, which was used to calculate the mineral loss delta Z (ΔZ). The percentage of mineral volume, ΔZ, and the percentage of demineralization inhibition of the groups were statistically analyzed by using analysis of variance and Tukey-Kramer test. The percentage of mineral volume was higher in the irradiated groups up to 80 μm deep. The ΔZ was significantly lower in the irradiated groups than in the control group. The percentage of reduction in demineralization ranged from 19.73 to 29.21 in position 1 (50 μm), and from 24.76 to 26.73 in position 2 (100 μm), when using 6 and 5 J/cm(2), respectively. The CO2 laser was effective in inhibiting root demineralization around composite resin restorations.

Advances in cryogenic engineering. Volume 33 - Proceedings of the Cryogenic Engineering Conference, Saint Charles, IL, June 14-18, 1987

NASA Technical Reports Server (NTRS)

Fast, R. W. (Editor)

1988-01-01

Papers are presented on superconductivity applications including magnets, electronics, rectifiers, magnet stability, coil protection, and cryogenic techniques. Also considered are insulation, heat transfer to liquid helium and nitrogen, heat and mass transfer in He II, superfluid pumps, and refrigeration for superconducting systems. Other topics include cold compressors, refrigeration and liquefaction, magnetic refrigeration, and refrigeration for space applications. Papers are also presented on cryogenic applications, commercial cryogenic plants, the properties of cryogenic fluids, and cryogenic instrumentation and data acquisition.

Influence of different etching modes on bond strength and fatigue strength to dentin using universal adhesive systems.

PubMed

Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Berry, Thomas P; Watanabe, Hedehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

2016-02-01

The purpose of this study was to determine the dentin bonding ability of three new universal adhesive systems under different etching modes using fatigue testing. Prime & Bond elect [PE] (DENTSPLY Caulk), Scotchbond Universal [SU] (3M ESPE), and All Bond Universal [AU] (Bisco) were used in this study. A conventional single-step self-etch adhesive, Clearfil Bond SE ONE [CS] (Kuraray Noritake Dental) was also included as a control. Shear bond strengths (SBS) and shear fatigue strength (SFS) to human dentin were obtained in the total-etch mode and self-etch modes. For each test condition, 15 specimens were prepared for the SBS and 30 specimens for SFS. SEM was used to examine representative de-bonded specimens, treated dentin surfaces and the resin/dentin interface for each test condition. Among the universal adhesives, PE in total-etch mode showed significantly higher SBS and SFS values than in self-etch mode. SU and AU did not show any significant difference in SBS and SFS between the total-etch mode and self-etch mode. However, the single-step self-etch adhesive CS showed significantly lower SBS and SFS values in the etch-and-rinse mode when compared to the self-etch mode. Examining the ratio of SFS/SBS, for PE and AU, the etch-and-rinse mode groups showed higher ratios than the self-etch mode groups. The influence of different etching modes on dentin bond quality of universal adhesives was dependent on the adhesive material. However, for the universal adhesives, using the total-etch mode did not have a negative impact on dentin bond quality. Copyright © 2015 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Bi/In thermal resist for both Si anisotropic wet etching and Si/SiO2 plasma etching

NASA Astrophysics Data System (ADS)

Chapman, Glenn H.; Tu, Yuqiang; Peng, Jun

2004-01-01

Bi/In thermal resist is a bilayer structure of Bi over In films which can be exposed by laser with a wide range of wavelengths and can be developed by diluted RCA2 solutions. Current research shows bimetallic resist can work as etch masking layer for both dry plasma etching and wet anisotropic etching. It can act as both patterning and masking layers for Si and SiO2 with plasma "dry" etch using CF4/CHF3. The etching condition is CF4 flow rate 50 sccm, pressure 150 mTorr, and RF power 100 - 600W. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1 nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In. Bi/In also creates etch masking layers for alkaline-based (KOH, TMAH and EDP) "wet" anisotropic bulk Si etch without the need of SiO2 masking steps. The laser exposed Bi/In etches two times more slowly than SiO2. Experiment result shows that single metal Indium film exhibits thermal resist characteristics but at twice the exposure levels. It can be developed in diluted RCA2 solution and used as an etch mask layer for Si anisotropic etch. X-ray diffraction analysis shows that laser exposure causes both Bi and In single film to oxidize. In film may become amorphous when exposed to high laser power.

Pattern sampling for etch model calibration

NASA Astrophysics Data System (ADS)

Weisbuch, François; Lutich, Andrey; Schatz, Jirka

2017-06-01

Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels as well as the choice of calibration patterns is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels -"internal, external, curvature, Gaussian, z_profile" - designed to capture the finest details of the resist contours and represent precisely any etch bias. By evaluating the etch kernels on various structures it is possible to map their etch signatures in a multi-dimensional space and analyze them to find an optimal sampling of structures to train an etch model. The method was specifically applied to a contact layer containing many different geometries and was used to successfully select appropriate calibration structures. The proposed kernels evaluated on these structures were combined to train an etch model significantly better than the standard one. We also illustrate the usage of the specific kernel "z_profile" which adds a third dimension to the description of the resist profile.

Development, Fabrication, and Characterization of Hydrogel Based Piezoresistive Pressure Sensors with Perforated Diaphragms

PubMed Central

Orthner, M.P.; Buetefisch, Sebastian; Magda, J.; Rieth, L.W.; Solzbacher, F.

2010-01-01

Hydrogels have been demonstrated to swell in response to a number of external stimuli including pH, CO2, glucose, and ionic strength making them useful for detection of metabolic analytes. To measure hydrogel swelling pressure, we have fabricated and tested novel perforated diaphragm piezoresistive pressure sensor arrays that couple the pressure sensing diaphragm with a perforated semi-permeable membrane. The 2×2 arrays measure approximately 3 × 5 mm2 and consist of four square sensing diaphragms with widths of 1.0, 1.25, and 1.5 mm used to measure full scale pressures of 50, 25, and 5 kPa, respectively. An optimized geometry of micro pores was etched in silicon diaphragm to allow analyte diffusion into the sensor cavity where the hydrogel material is located. The 14-step front side wafer process was carried out by a commercial foundry service (MSF, Frankfurt (Oder), Germany) and diaphragm pores were created using combination of potassium hydroxide (KOH) etching and deep reactive ion etching (DRIE). Sensor characterization was performed (without the use of hydrogels) using a custom bulge testing apparatus that simultaneously measured deflection, pressure, and electrical output. Test results are used to quantify the sensor sensitivity and demonstrate proof-of-concept. Simulations showed that the sensitivity was slightly improved for the perforated diaphragm designs while empirical electrical characterization showed that the perforated diaphragm sensors were slightly less sensitive than solid diaphragm sensors. This discrepancy is believed to be due to the influence of compressive stress found within passivation layers and poor etching uniformity. The new perforated diaphragm sensors were fully functional with sensitivities ranging from 23 to 252 μV/V-kPa (FSO= 5 to 80mV), and show a higher nonlinearity at elevated pressures than identical sensors with solid diaphragms. Sensors (1.5×1.5 mm2) with perforated diaphragms (pores=40 μm) have a nonlinearity of approximately 10% while for the identical solid diaphragm sensor it was roughly 3 % over the entire 200 kPa range. This is the first time piezoresistive pressure sensors with integrated diffusion pores for detection of hydrogel swelling pressure have been fabricated and tested. PMID:20657810

Copper-assisted, anti-reflection etching of silicon surfaces

DOEpatents

Toor, Fatima; Branz, Howard

2014-08-26

A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

A review on plasma-etch-process induced damage of HgCdTe

NASA Astrophysics Data System (ADS)

Liu, Lingfeng; Chen, Yiyu; Ye, Zhenhua; Ding, Ruijun

2018-05-01

Dry etching techniques with minimal etch induced damage are required to develop highly anisotropic etch for pixel delineation of HgCdTe infrared focal plane arrays (IRFPAs). High density plasma process has become the main etching technique for HgCdTe in the past twenty years, In this paper, high density plasma electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etching of HgCdTe are summarized. Common plasma-etch-process induced type conversion and related mechanisms are reviewed particularly.

Sources of Cryogenic Data and Information

NASA Astrophysics Data System (ADS)

Mohling, R. A.; Hufferd, W. L.; Marquardt, E. D.

It is commonly known that cryogenic data, technology, and information are applied across many military, National Aeronautics and Space Administration (NASA), and civilian product lines. Before 1950, however, there was no centralized US source of cryogenic technology data. The Cryogenic Data Center of the National Bureau of Standards (NBS) maintained a database of cryogenic technical documents that served the national need well from the mid 1950s to the early 1980s. The database, maintained on a mainframe computer, was a highly specific bibliography of cryogenic literature and thermophysical properties that covered over 100 years of data. In 1983, however, the Cryogenic Data Center was discontinued when NBS's mission and scope were redefined. In 1998, NASA contracted with the Chemical Propulsion Information Agency (CPIA) and Technology Applications, Inc. (TAI) to reconstitute and update Cryogenic Data Center information and establish a self-sufficient entity to provide technical services for the cryogenic community. The Cryogenic Information Center (CIC) provided this service until 2004, when it was discontinued due to a lack of market interest. The CIC technical assets were distributed to NASA Marshall Space Flight Center and the National Institute of Standards and Technology. Plans are under way in 2006 for CPIA to launch an e-commerce cryogenic website to offer bibliography data with capability to download cryogenic documents.

Thermodynamics of nuclear track chemical etching

NASA Astrophysics Data System (ADS)

Rana, Mukhtar Ahmed

2018-05-01

This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

High rate dry etching of InGaZnO by BCl3/O2 plasma

NASA Astrophysics Data System (ADS)

Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

2011-08-01

This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

Chemical method for producing smooth surfaces on silicon wafers

DOEpatents

Yu, Conrad

2003-01-01

An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

NASA Astrophysics Data System (ADS)

Li, Hailiang; Ye, Tianchun; Shi, Lina; Xie, Changqing

2017-12-01

We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

PubMed

Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

2017-10-24

Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas

PubMed Central

2014-01-01

In this work, the inductively coupled plasma etching technique was applied to etch the barium titanate thin film. A comparative study of etch characteristics of the barium titanate thin film has been investigated in fluorine-based (CF4/O2, C4F8/O2 and SF6/O2) plasmas. The etch rates were measured using focused ion beam in order to ensure the accuracy of measurement. The surface morphology of etched barium titanate thin film was characterized by atomic force microscope. The chemical state of the etched surfaces was investigated by X-ray photoelectron spectroscopy. According to the experimental result, we monitored that a higher barium titanate thin film etch rate was achieved with SF6/O2 due to minimum amount of necessary ion energy and its higher volatility of etching byproducts as compared with CF4/O2 and C4F8/O2. Low-volatile C-F compound etching byproducts from C4F8/O2 were observed on the etched surface and resulted in the reduction of etch rate. As a result, the barium titanate films can be effectively etched by the plasma with the composition of SF6/O2, which has an etch rate of over than 46.7 nm/min at RF power/inductively coupled plasma (ICP) power of 150/1,000 W under gas pressure of 7.5 mTorr with a better surface morphology. PMID:25278821

The K 2S 2O 8-KOH photoetching system for GaN

NASA Astrophysics Data System (ADS)

Weyher, J. L.; Tichelaar, F. D.; van Dorp, D. H.; Kelly, J. J.; Khachapuridze, A.

2010-09-01

A recently developed photoetching system for n-type GaN, a KOH solution containing the strong oxidizing agent potassium peroxydisulphate (K 2S 2O 8), was studied in detail. By careful selection of the etching parameters, such as the ratio of components and the hydrodynamics, two distinct modes were defined: defect-selective etching (denoted by KSO-D) and polishing (KSO-P). Both photoetching methods can be used under open-circuit (electroless) conditions. Well-defined dislocation-related etch whiskers are formed during KSO-D etching. All types of dislocations are revealed, and this was confirmed by cross-sectional TEM examination of the etched samples. Extended electrically active defects are also clearly revealed. The known relationship between etch rate and carrier concentration for photoetching of GaN in KOH solutions was confirmed for KSO-D etch using Raman measurements. It is shown that during KSO-P etching diffusion is the rate-limiting step, i.e. this etch is suitable for polishing of GaN. Some constraints of the KSO etching system for GaN are discussed and peculiar etch features, so far not understood, are described.

Spacecraft cryogenic gas storage systems

NASA Technical Reports Server (NTRS)

Rysavy, G.

1971-01-01

Cryogenic gas storage systems were developed for the liquid storage of oxygen, hydrogen, nitrogen, and helium. Cryogenic storage is attractive because of the high liquid density and low storage pressure of cryogens. This situation results in smaller container sizes, reduced container-strength levels, and lower tankage weights. The Gemini and Apollo spacecraft used cryogenic gas storage systems as standard spacecraft equipment. In addition to the Gemini and Apollo cryogenic gas storage systems, other systems were developed and tested in the course of advancing the state of the art. All of the cryogenic storage systems used, developed, and tested to date for manned-spacecraft applications are described.

Ultradeep electron cyclotron resonance plasma etching of GaN

DOE PAGES

Harrison, Sara E.; Voss, Lars F.; Torres, Andrea M.; ...

2017-07-25

Here, ultradeep (≥5 μm) electron cyclotron resonance plasma etching of GaN micropillars was investigated. Parametric studies on the influence of the applied radio-frequency power, chlorine content in a Cl 2/Ar etch plasma, and operating pressure on the etch depth, GaN-to-SiO 2 selectivity, and surface morphology were performed. Etch depths of >10 μm were achieved over a wide range of parameters. Etch rates and sidewall roughness were found to be most sensitive to variations in RF power and % Cl 2 in the etch plasma. Selectivities of >20:1 GaN:SiO 2 were achieved under several chemically driven etch conditions where a maximummore » selectivity of ~39:1 was obtained using a 100% Cl 2 plasma. The etch profile and (0001) surface morphology were significantly influenced by operating pressure and the chlorine content in the plasma. Optimized etch conditions yielded >10 μm tall micropillars with nanometer-scale sidewall roughness, high GaN:SiO 2 selectivity, and nearly vertical etch profiles. These results provide a promising route for the fabrication of ultradeep GaN microstructures for use in electronic and optoelectronic device applications. In addition, dry etch induced preferential crystallographic etching in GaN microstructures is also demonstrated, which may be of great interest for applications requiring access to non- or semipolar GaN surfaces.« less

Anisotropic Hydrogen Etching of Chemical Vapor Deposited Graphene

NASA Astrophysics Data System (ADS)

Zhang, Yi; Li, Zhen; Zhang, Luyao; Kim, Pyojae; Zhou, Chongwu

2012-02-01

In terms of the preparation of graphene, chemical vapor deposition (CVD) has raised its popularity as a scalable and cost effective approach for graphene synthesis. While the formation of graphene on copper foil has been intensively studied, the reverse reaction of graphene reacts with hydrogen has not been systematically studied. In this talk we will present a simple, clean, and highly anisotropic hydrogen etching method for CVD graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 ^oC, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent and the etching of graphene at 800 oC is most efficient and anisotropic. 80% of the angles of graphene edges after etching are 120^o, indicating the etching is highly anisotropic. No increase of D band along the etched edges indicates that the crystallographic orientation of etching is zigzag direction. Furthermore, we observed that copper played an important role in catalyzing the etching reaction, as no etching was observed for graphene transferred to Si/SiO2 under similar conditions. This highly anisotropic hydrogen etching technology may work as a simple and convenient way to determine graphene crystal orientation and grain size, and may enable the etching of graphene into nanoribbons for electronic applications.

Modifications of Fabrication of Vibratory Microgyroscopes

NASA Technical Reports Server (NTRS)

Bae, Sam Y.; Yee, Karl Y.; Wiberg, Dean

2005-01-01

A micromachining process for the fabrication of vibratory microgyroscopes from silicon wafers, and aspects of the microgyroscope design that are inextricably linked with the fabrication process, have been modified in an effort to increase production yields from perspectives of both quantity and quality. Prior to the modifications, the effective production yield of working microgyroscopes was limited to one or less per wafer. The modifications are part of a continuing effort to improve the design and increase production yields to more than 30 working microgyroscopes per wafer. A discussion of pertinent aspects of the unmodified design and the unmodified fabrication process is prerequisite to a meaningful description of the modifications. The design of the microgyroscope package was not conducive to high yield and rapid testing of many microgyroscopes. One of the major impediments to high yield and testing was found to lie in vibration- isolation beams around the four edges of each microgyroscope, which beams were found to be unnecessary for achieving high resonance quality factors (Q values) characterizing the vibrations of petallike cantilevers. The fabrication process included an 8- m-deep plasma etch. The purpose of the etch was to create 8- m vertical gaps, below which were to be placed large gold evaporated electrodes and sensing pads to drive and sense resonant vibrations of the "petals." The process also included a step in which bridges between dies were cut to separate the dies. The etched areas must be kept clean and smooth (free of debris and spikes), because any object close to 8 m high in those areas would stop the vibrations. However, it was found that after the etch, there remained some spikes with heights that were, variously, almost as high or as high as the etch depth. It also was found that the cutting of bridges created silicon debris, some of which lodged in the 8- m gaps and some of which landed on top of the petals. The masses added to the petals by the debris altered resonance frequencies and/or Q values to unacceptable degrees. Hence, the spikes and the debris have been conjectured to cause most of the observed malfunctions of newly fabricated microgyroscopes. Another pertinent aspect of the unmodified design and process was the fabrication of electrodes and the 8- m capacitance gap on a 500- m-thick wafer, and the fabrication of a 3-mm-thick baseplate from another wafer. It was necessary to bond these wafers to each other in an assembly step that was later found to be superfluous in that it could be eliminated by a suitable modification of the design.

Effect of additional etching and ethanol-wet bonding on the dentin bond strength of one-step self-etch adhesives

PubMed Central

Ahn, Joonghee; Jung, Kyoung-Hwa; Son, Sung-Ae; Hur, Bock; Kwon, Yong-Hoon

2015-01-01

Objectives This study examined the effects of additional acid etching on the dentin bond strength of one-step self-etch adhesives with different compositions and pH. The effect of ethanol wetting on etched dentin bond strength of self-etch adhesives was also evaluated. Materials and Methods Forty-two human permanent molars were classified into 21 groups according to the adhesive types (Clearfil SE Bond [SE, control]; G-aenial Bond [GB]; Xeno V [XV]; Beauti Bond [BB]; Adper Easy Bond [AE]; Single Bond Universal [SU]; All Bond Universal [AU]), and the dentin conditioning methods. Composite resins were placed on the dentin surfaces, and the teeth were sectioned. The microtensile bond strength was measured, and the failure mode of the fractured specimens was examined. The data were analyzed statistically using two-way ANOVA and Duncan's post hoc test. Results In GB, XV and SE (pH ≤ 2), the bond strength was decreased significantly when the dentin was etched (p < 0.05). In BB, AE and SU (pH 2.4 - 2.7), additional etching did not affect the bond strength (p > 0.05). In AU (pH = 3.2), additional etching increased the bond strength significantly (p < 0.05). When adhesives were applied to the acid etched dentin with ethanol-wet bonding, the bond strength was significantly higher than that of the no ethanol-wet bonding groups, and the incidence of cohesive failure was increased. Conclusions The effect of additional acid etching on the dentin bond strength was influenced by the pH of one-step self-etch adhesives. Ethanol wetting on etched dentin could create a stronger bonding performance of one-step self-etch adhesives for acid etched dentin. PMID:25671215

Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction

DOEpatents

Tauke-Pedretti, Anna; Nielson, Gregory N; Cederberg, Jeffrey G; Cruz-Campa, Jose Luis

2015-05-12

A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.

The lambda point experiment in microgravity

NASA Technical Reports Server (NTRS)

Lipa, J. A.

1988-01-01

The motivation and potential for performing very high resolution measurements of the heat capacity singularity at the lambda point of helium in microgravity conditions was briefly discussed. It is clear that tests extending deep into the asymptotic region can be performed, where the theoretical predictions take on their simplest form. This advantageous situation should lead to a major improvement in the understanding of the range of applicability of current theoretical ideas in this field. The lambda transition holds out the prospect of giving the maximum advance of any system, and with the application of cryogenic techniques, the potential of this system can be realized. The technology for the initial experiments is already developed, and results could be obtained in 1990.

The total hemispheric emissivity of painted aluminum honeycomb at cryogenic temperatures

NASA Astrophysics Data System (ADS)

Tuttle, J.; Canavan, E.; DiPirro, M.; Li, X.; Knollenberg, P.

2014-01-01

NASA uses high-emissivity surfaces on deep-space radiators and thermal radiation absorbers in test chambers. Aluminum honeycomb core material, when coated with a high-emissivity paint, provides a lightweight, mechanically robust, and relatively inexpensive black surface that retains its high emissivity down to low temperatures. At temperatures below about 100 Kelvin, this material performs much better than the paint itself. We measured the total hemispheric emissivity of various painted honeycomb configurations using an adaptation of an innovative technique developed for characterizing thin black coatings. These measurements were performed from room temperature down to 30 Kelvin. We describe the measurement technique and compare the results with predictions from a detailed thermal model of each honeycomb configuration.

The Total Hemispheric Emissivity of Painted Aluminum Honeycomb at Cryogenic Temperatures

NASA Technical Reports Server (NTRS)

Tuttle, J.; Canavan, E.; DiPirro, M.; Li, X.; Knollenberg, K.

2013-01-01

NASA uses high-emissivity surfaces on deep-space radiators or thermal radiation absorbers in test chambers. Aluminum honeycomb core material, when coated with a high-emissivity paint, provides a lightweight, mechanically robust, and relatively inexpensive black surface that retains its high emissivity down to low temperatures. At temperatures below about 100 Kelvin, this material performs much better than the paint itself. We measured the total hemispheric emissivity of various painted honeycomb configurations using an adaptation of an innovative technique developed for characterizing thin black coatings. These measurements were performed from room temperature down to 30 Kelvin. We describe the measurement technique and compare the results with predictions from a detailed thermal model of each honeycomb configuration.

High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

NASA Astrophysics Data System (ADS)

Song, Junqiang; Shi, Xun; Chen, Lidong

2014-10-01

Etching characteristics of p-type (BiSb)2Te3 films were studied with CH4/H2/Ar gas mixture using an inductively coupled plasma (ICP)-reactive ion etching (RIE) system. The effects of gas mixing ratio, working pressure and gas flow rate on the etch rate and the surface morphology were investigated. The vertical etched profile with the etch rate of 600 nm/min was achieved at the optimized processing parameters. X-ray photoelectron spectroscopy (XPS) analysis revealed the non-uniform etching of (BiSb)2Te3 films due to disparate volatility of the etching products. Micro-masking effects caused by polymer deposition and Bi-rich residues resulted in roughly etched surfaces. Smooth surfaces can be obtained by optimizing the CH4/H2/Ar mixing ratio.

Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching

NASA Astrophysics Data System (ADS)

Asoh, Hidetaka; Fujihara, Kosuke; Ono, Sachiko

2012-07-01

The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etched in a mixed solution of HF and H2O2 at room temperature, resulting in the formation of ordered macropores in silicon along the [111] direction, which is not achievable by conventional chemical etching without a catalyst. In the anisotropic etching in TMAH, the macropores changed from being circular to being hexagonal and finally to being triangular, owing to the difference in etching rate between the crystal planes.

Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

NASA Astrophysics Data System (ADS)

Bérubé, P.-M.; Poirier, J.-S.; Margot, J.; Stafford, L.; Ndione, P. F.; Chaker, M.; Morandotti, R.

2009-09-01

The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited CaxBa(1-x)Nb2O6 (CBN) and SrTiO3 thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl2 plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl2 and BaCl2 compounds being the rate-limiting step.

Cryogenics and the Human Exploration of Mars

NASA Technical Reports Server (NTRS)

Salerno, Louis J.; Kittel, Peter; Rasky, Daniel J. (Technical Monitor)

1997-01-01

Current plans within NASA involve extending the human exploration of space from low earth orbit into the solar system, with the first human exploration of Mars presently planned in 2011. Integral to all hum Mars mission phases is cryogenic fluid management. Cryogenic fluids will be required both as propellant and for In-Situ Resource Utilization (ISRU). Without safe and efficient cryogen storage human Mars missions will not be possible. Effective control and handling of cryogenic fluids is the key to affordable Mars missions, and advancing active thermal control technology is synergistic with all of NASA's exploration initiatives and with existing and future instrument cooling programs, including MTPE and Origins. Present mission scenarios for human exploration require cryogenic propellant storage for up to 1700 days and for up to 60 metric tons. These requirements represent increases of an order of magnitude over previous storage masses and lifetimes. The key cryogenic terminology areas to be addressed in human Mars missions are long-term propellant storage, cryogenic refrigeration, cryogenic liquefaction, and zero gravity fluid management. Long-term storage for the thermal control of cryogenic propellants is best accomplished with a mix of passive and active technologies. Passive technologies such as advanced multilayer insulation (MLI) concepts will be combined with the development of active coolers (cryogenic refrigerators). Candidates for long-life active cooling applications include Reverse Turbo-Brayton, Stirling, and Pulse-Tube coolers. The integration of passive and active technologies will form a hybrid system optimized to minimize the launch mass while preserving the cryogenic propellants. Since cryogenic propellants are the largest mass that Mars missions must launch from earth, even a modest reduction in the percentage of propellant carried results in a significant weight saving. This paper will present a brief overview of cryogenic fluid management technology as it applies to the current human Mars mission scenarios.

Metal etching composition

NASA Technical Reports Server (NTRS)

Otousa, Joseph E. (Inventor); Thomas, Clark S. (Inventor); Foster, Robert E. (Inventor)

1991-01-01

The present invention is directed to a chemical etching composition for etching metals or metallic alloys. The composition includes a solution of hydrochloric acid, phosphoric acid, ethylene glycol, and an oxidizing agent. The etching composition is particularly useful for etching metal surfaces in preparation for subsequent fluorescent penetrant inspection.

New frontiers of atomic layer etching

NASA Astrophysics Data System (ADS)

Sherpa, Sonam D.; Ranjan, Alok

2018-03-01

Interest in atomic layer etching (ALE) has surged recently because it offers several advantages over continuous or quasicontinuous plasma etching. These benefits include (1) independent control of ion energy, ion flux, and radical flux, (2) flux-independent etch rate that mitigates the iso-dense loading effects, and (3) ability to control the etch rate with atomic or nanoscale precision. In addition to these benefits, we demonstrate an area-selective etching for maskless lithography as a new frontier of ALE. In this paper, area-selective etching refers to the confinement of etching into the specific areas of the substrate. The concept of area-selective etching originated during our studies on quasi-ALE of silicon nitride which consists of sequential exposure of silicon nitride to hydrogen and fluorinated plasma. The findings of our studies reported in this paper suggest that it may be possible to confine the etching into specific areas of silicon nitride without using any mask by replacing conventional hydrogen plasma with a localized source of hydrogen ions.

In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

PubMed

Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

2014-08-01

To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

Etching of enamel for direct bonding with a thulium fiber laser

NASA Astrophysics Data System (ADS)

Kabaş Sarp, Ayşe S.; Gülsoy, Murat

2011-03-01

Background: Laser etching of enamel for direct bonding can decrease the risk of surface enamel loss and demineralization which are the adverse effects of acid etching technique. However, in excess of +5.5°C can cause irreversible pulpal responses. In this study, a 1940- nm Thulium Fiber Laser in CW mode was used for laser etching. Aim: Determination of the suitable Laser parameters of enamel surface etching for direct bonding of ceramic brackets and keeping that intrapulpal temperature changes below the threshold value. Material and Method: Polycrystalline ceramic orthodontic brackets were bonded on bovine teeth by using 2 different kinds of etching techniques: Acid and Laser Etching. In addition to these 3 etched groups, there was also a group which was bonded without etching. Brackets were debonded with a material testing machine. Breaking time and the load at the breaking point were measured. Intrapulpal temperature changes were recorded by a K-type Thermocouple. For all laser groups, intrapulpal temperature rise was below the threshold value of 5.5°C. Results and Conclusion: Acid-etched group ( 11.73 MPa) significantly required more debonding force than 3- second- irradiated ( 5.03 MPa) and non-etched groups ( 3.4 MPa) but the results of acid etched group and 4- second- irradiated group (7.5 MPa) showed no significant difference. Moreover, 4- second irradiated group was over the minimum acceptable value for clinical use. Also, 3- second lasing caused a significant reduction in time according to acid-etch group. As a result, 1940- nm laser irradiation is a promising method for laser etching.

Does active application of universal adhesives to enamel in self-etch mode improve their performance?

PubMed

Loguercio, Alessandro D; Muñoz, Miguel Angel; Luque-Martinez, Issis; Hass, Viviane; Reis, Alessandra; Perdigão, Jorge

2015-09-01

To evaluate the effect of adhesion strategy on the enamel microshear bond strengths (μSBS), etching pattern, and in situ degree of conversion (DC) of seven universal adhesives. 84 extracted third molars were sectioned in four parts (buccal, lingual, proximal) and divided into 21 groups, according to the combination of the main factors adhesive (AdheSE Universal [ADU], All-Bond Universal [ABU], Clearfil Universal [CFU], Futurabond U [FBU], G-Bond Plus [GBP], Prime&Bond Elect (PBE), and Scotchbond Universal Adhesive [SBU]), and adhesion strategy (etch-and-rinse, active self-etch, and passive self-etch). Specimens were stored in water (37°C/24h) and tested at 1.0mm/min (μSBS). Enamel-resin interfaces were evaluated for DC using micro-Raman spectroscopy. The enamel-etching pattern was evaluated under a field-emission scanning electron microscope (direct and replica techniques). Data were analyzed with two-way ANOVA and Tukey's test (α=0.05). Active self-etch application increased μSBS and DC for five out of the seven universal adhesives when compared to passive application (p<0.001). A deeper enamel-etching pattern was observed for all universal adhesives in the etch-and-rinse strategy. A slight improvement in etching ability was observed in active self-etch application compared to that of passive self-etch application. Replicas of GBP and PBE applied in active self-etch mode displayed morphological features compatible with water droplets. The DC of GBP and PBE were not affected by the application/strategy mode. In light of the improved performance of universal adhesives when applied actively in SE mode, selective enamel etching with phosphoric acid may not be crucial for their adhesion to enamel. The active application of universal adhesives in self-etch mode may be a practical alternative to enamel etching in specific clinical situations. Copyright © 2015 Elsevier Ltd. All rights reserved.

A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

NASA Astrophysics Data System (ADS)

Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

2017-08-01

The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

Bonding performance of universal adhesives to er,cr:YSGG laser-irradiated enamel.

PubMed

Ayar, Muhammet Kerim; Erdemir, Fatih

2017-04-01

Universal adhesives have been recently introduced for use as self-etch or etch-and-rinse adhesives depending on the dental substrate and clinical condition. However, their bonding effectiveness to laser-irradiated enamel is still not well-known. Thus, the aim of this study was to compare the shear bond strength (SBS) of universal adhesives (Single Bond Universal; Nova Compo-B Plus) applied to Er,Cr:YSGG laser-irradiated enamel with SBS of the same adhesives applied in self-etch and acid-etching modes, respectively. Crown segments of sixty bovine incisors were embedded into standardized acrylic blocks. Flattened enamel surfaces were prepared. Specimens were divided into six groups according to universal adhesives and application modes randomly (n = 10), as follows: Single Bond Universal/acid-etching mode; Nova Compo-B Plus/acid-etching mode; Single Bond Universal/self-etching mode; Nova Compo-B Plus/self-etching mode; and Single Bond Universal/Er,Cr:YSGG Laser-etching mode; Nova Compo-B Plus/Er,Cr:YSGG Laser-etching mode. After surface treatments, universal adhesives were applied onto surfaces. SBS was determined after storage in water for 24 h using a universal testing machine with a crosshead speed of 0.5 mm min -1 . Failure modes were evaluated using a stereomicroscope. Data was analyzed using two-way of analyses of variances (ANOVA) (p = 0.05). Two-way ANOVA revealed that adhesive had no effect on SBS (p = 0.88), but application mode significantly influenced SBS (p = 0.00). Acid-etching significantly increased SBS, whereas there are no significant differences between self-etch mode and laser-etching for both adhesives. The bond strength of universal adhesives may depend on application mode. Acid etching may significantly increase bond strength, while laser etching may provide similar bond strength when compared to self-etch mode. © 2016 Wiley Periodicals, Inc.

Simultaneous fabrication of a microcavity absorber-emitter on a Ni-W alloy film

NASA Astrophysics Data System (ADS)

Nashun; Kagimoto, Masahiro; Iwami, Kentaro; Umeda, Norihiro

2017-10-01

A process for the simultaneous fabrication of microcavity structures on both sides of a film was proposed and demonstrated to develop a free-standing-type integrated absorber-emitter for use in solar thermophotovoltaic power generation systems. The absorber-emitter-integrated film comprised a heat-resistant Ni-W alloy deposited by electroplating. A two-step silicon mould was fabricated using deep reactive-ion etching and electron beam lithography. Cavity arrays with different unit sizes were successfully fabricated on both sides of the film; these arrays are suitable for use as a solar spectrum absorber and an infrared-selective emitter. Their emissivity spectra were characterised through UV-vis-NIR and Fourier transform infrared spectroscopy.

Silicon Micromachining for Terahertz Component Development

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Reck, Theodore J.; Jung-Kubiak, Cecile; Siles, Jose V.; Lee, Choonsup; Lin, Robert; Mehdi, Imran

2013-01-01

Waveguide component technology at terahertz frequencies has come of age in recent years. Essential components such as ortho-mode transducers (OMT), quadrature hybrids, filters, and others for high performance system development were either impossible to build or too difficult to fabricate with traditional machining techniques. With micromachining of silicon wafers coated with sputtered gold it is now possible to fabricate and test these waveguide components. Using a highly optimized Deep Reactive Ion Etching (DRIE) process, we are now able to fabricate silicon micromachined waveguide structures working beyond 1 THz. In this paper, we describe in detail our approach of design, fabrication, and measurement of silicon micromachined waveguide components and report the results of a 1 THz canonical E-plane filter.

Two different carbon-hydrogen complexes in silicon with closely spaced energy levels

NASA Astrophysics Data System (ADS)

Stübner, R.; Kolkovsky, Vl.; Weber, J.

2015-08-01

An acceptor and a single donor state of carbon-hydrogen defects (CHA and CHB) are observed by Laplace deep level transient spectroscopy at 90 K. CHA appears directly after hydrogenation by wet chemical etching or hydrogen plasma treatment, whereas CHB can be observed only after a successive annealing under reverse bias at about 320 K. The activation enthalpies of these states are 0.16 eV for CHA and 0.14 eV for CHB. Our results reconcile previous controversial experimental results. We attribute CHA to the configuration where substitutional carbon binds a hydrogen atom on a bond centered position between carbon and the neighboring silicon and CHB to another carbon-hydrogen defect.

Electromagnetic micropores: fabrication and operation.

PubMed

Basore, Joseph R; Lavrik, Nickolay V; Baker, Lane A

2010-12-21

We describe the fabrication and characterization of electromagnetic micropores. These devices consist of a micropore encompassed by a microelectromagnetic trap. Fabrication of the device involves multiple photolithographic steps, combined with deep reactive ion etching and subsequent insulation steps. When immersed in an electrolyte solution, application of a constant potential across the micropore results in an ionic current. Energizing the electromagnetic trap surrounding the micropore produces regions of high magnetic field gradients in the vicinity of the micropore that can direct motion of a ferrofluid onto or off of the micropore. This results in dynamic gating of the ion current through the micropore structure. In this report, we detail fabrication and characterize the electrical and ionic properties of the prepared electromagnetic micropores.

High Contrast Internal and External Coronagraph Masks Produced by Various Techniques

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatha; Wilson, Daniel; White, Victor; Muller, Richard; Dickie, Matthew; Yee, Karl; Ruiz, Ronald; Shaklan, Stuart; Cady, Eric; Kern, Brian;

Microwave Extraction of Water from Lunar Regolith Simulant

NASA Technical Reports Server (NTRS)

Ethridge, Edwin C.; Kaukler, William

2007-01-01

Nearly a decade ago the DOD Clementine lunar orbital mission obtained data indicating that the permanently shaded regions at the lunar poles may have permanently frozen water in the lunar soil. Currently NASA's Robotic Lunar Exploration Program, RLEP-2, is planned to land at the lunar pole to determine if water is present. The detection and extraction of water from the permanently frozen permafrost is an important goal for NASA. Extraction of water from lunar permafrost has a high priority in the In-Situ Resource Utilization, ISRU, community for human life support and as a fuel. The use of microwave processing would permit the extraction of water without the need to dig, drill, or excavate the lunar surface. Microwave heating of regolith is potentially faster and more efficient than any other heating methods due to the very low thermal conductivity of the lunar regolith. Also, microwaves can penetrate into the soil permitting water removal from deep below the lunar surface. A cryogenic vacuum test facility was developed for evaluating the use of microwave heating and water extraction from a lunar regolith permafrost simulant. Water is obtained in a cryogenic cold trap even with soil conditions below 0 C. The results of microwave extraction of water experiments will be presented.

Shuttle cryogenic supply system optimization study. Volume 4: Cryogenic cooling in environmental control systems

NASA Technical Reports Server (NTRS)

1973-01-01

An analysis of cryogenic fluid cooling in the environmental control system of the space shuttle was conducted. The technique for treating the cryogenic fluid storage and supply tanks and subsystems as integrated systems was developed. It was concluded that a basic incompatibility exists between the heat generated and the cryogen usage rate and cryogens cannot be used to absorb the generated heat. The use of radiators and accumulators to provide additional cooling capability is recommended.

Cryogen Safety Course 8876

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glass, George

2017-06-13

Cryogenics (from the Greek word κρvoζ, meaning frost or icy cold) is the study of the behavior of matter at very cold temperatures. The purpose of this course is to provide trainees with an introduction to cryogen use, the hazards and potential accidents related to cryogen systems, cryogen safety components, and the requirements that govern the design and use of cryogen systems at Los Alamos National Laboratory (LANL). The knowledge you gain will help you keep your workplace safe for yourself and your coworkers.

Isotropic plasma etching of Ge Si and SiN x films

DOE PAGES

Henry, Michael David; Douglas, Erica Ann

2016-08-31

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

NASA Astrophysics Data System (ADS)

Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

2018-06-01

The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

Metal-assisted etch combined with regularizing etch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yim, Joanne; Miller, Jeff; Jura, Michael

In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performingmore » a chemical etch which results in regularized openings in the silicon substrate.« less

Difference in anisotropic etching characteristics of alkaline and copper based acid solutions for single-crystalline Si.

PubMed

Chen, Wei; Liu, Yaoping; Yang, Lixia; Wu, Juntao; Chen, Quansheng; Zhao, Yan; Wang, Yan; Du, Xiaolong

2018-02-21

The so called inverted pyramid arrays, outperforming conventional upright pyramid textures, have been successfully achieved by one-step Cu assisted chemical etching (CACE) for light reflection minimization in silicon solar cells. Due to the lower reduction potential of Cu 2+ /Cu and different electronic properties of different Si planes, the etching of Si substrate shows orientation-dependent. Different from the upright pyramid obtained by alkaline solutions, the formation of inverted pyramid results from the coexistence of anisotropic etching and localized etching process. The obtained structure is bounded by Si {111} planes which have the lowest etching rate, no matter what orientation of Si substrate is. The Si etching rate and (100)/(111) etching ratio are quantitatively analyzed. The different behaviors of anisotropic etching of Si by alkaline and Cu based acid etchant have been systematically investigated.

Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

NASA Astrophysics Data System (ADS)

Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

2018-06-01

A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

PubMed

Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

2015-01-14

Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

A Study on Ohmic Contact to Dry-Etched p-GaN

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Ao, Jin-Ping; Okada, Masaya; Ohno, Yasuo

Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000°C 30s) was tried on the SiCl4/Cl2-etched p-GaN and Ohmic contact was obtained.

Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Weiye; Sridhar, Shyam; Liu, Lei

2014-05-28

Cl{sub 2}, Br{sub 2}, HBr, Br{sub 2}/Cl{sub 2}, and HBr/Cl{sub 2} feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br{sub 2}/Ar and HBr/Cl{sub 2}/Ar plasmas having the lowest and highest sub-threshold etching rates, respectively. Sub-threshold etching rates scaled with the product of surface halogen coverage (measured by X-ray photoelectron spectroscopy) andmore » Ar emission intensity (7504 Å). Etching rates measured under MgF{sub 2}, quartz, and opaque windows showed that sub-threshold etching is due to photon-stimulated processes on the surface, with vacuum ultraviolet photons being much more effective than longer wavelengths. Scanning electron and atomic force microscopy revealed that photo-etched surfaces were very rough, quite likely due to the inability of the photo-assisted process to remove contaminants from the surface. Photo-assisted etching in Cl{sub 2}/Ar plasmas resulted in the formation of 4-sided pyramidal features with bases that formed an angle of 45° with respect to 〈110〉 cleavage planes, suggesting that photo-assisted etching can be sensitive to crystal orientation.« less

Cryogenic Information Center

NASA Technical Reports Server (NTRS)

Mohling, Robert A.; Marquardt, Eric D.; Fusilier, Fred C.; Fesmire, James E.

2003-01-01

The Cryogenic Information Center (CIC) is a not-for-profit corporation dedicated to preserving and distributing cryogenic information to government, industry, and academia. The heart of the CIC is a uniform source of cryogenic data including analyses, design, materials and processes, and test information traceable back to the Cryogenic Data Center of the former National Bureau of Standards. The electronic database is a national treasure containing over 146,000 specific bibliographic citations of cryogenic literature and thermophysical property data dating back to 1829. A new technical/bibliographic inquiry service can perform searches and technical analyses. The Cryogenic Material Properties (CMP) Program consists of computer codes using empirical equations to determine thermophysical material properties with emphasis on the 4-300K range. CMP's objective is to develop a user-friendly standard material property database using the best available data so government and industry can conduct more accurate analyses. The CIC serves to benefit researchers, engineers, and technologists in cryogenics and cryogenic engineering, whether they are new or experienced in the field.

Advances in cryogenic engineering. Vols. 35A & 35B - Proceedings of the 1989 Cryogenic Engineering Conference, University of California, Los Angeles, July 24-28, 1989

NASA Astrophysics Data System (ADS)

Fast, R. W.

The book presents a review of literature on superfluid helium, together with papers under the topics on heat and mass transfer in He II; applications of He II for cooling superconducting devices in space; heat transfer to liquid helium and liquid nitrogen; multilayer insulation; applications of superconductivity, including topics on magnets and other devices, magnet stability and coil protection, and cryogenic techniques; and refrigeration for electronics. Other topics discussed include refrigeration of superconducting systems; the expanders, cold compressors, and pumps for liquid helium; dilution refrigerators; magnetic refrigerators; pulse tube refrigerators; cryocoolers for space applications; properties of cryogenic fluids; cryogenic instrumentation; hyperconducting devices (cryogenic magnets); cryogenic applications in space science and technology and in transportation; and miscellaneous cryogenic techniques and applications.

Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS

NASA Astrophysics Data System (ADS)

Rao, A. V. Narasimha; Swarnalatha, V.; Pal, P.

2017-12-01

Anisotropic wet etching is a most widely employed for the fabrication of MEMS/NEMS structures using silicon bulk micromachining. The use of Si{110} in MEMS is inevitable when a microstructure with vertical sidewall is to be fabricated using wet anisotropic etching. In most commonly employed etchants (i.e. TMAH and KOH), potassium hydroxide (KOH) exhibits higher etch rate and provides improved anisotropy between Si{111} and Si{110} planes. In the manufacturing company, high etch rate is demanded to increase the productivity that eventually reduces the cost of end product. In order to modify the etching characteristics of KOH for the micromachining of Si{110}, we have investigated the effect of hydroxylamine (NH2OH) in 20 wt% KOH solution. The concentration of NH2OH is varied from 0 to 20% and the etching is carried out at 75 °C. The etching characteristics which are studied in this work includes the etch rates of Si{110} and silicon dioxide, etched surface morphology, and undercutting at convex corners. The etch rate of Si{110} in 20 wt% KOH + 15% NH2OH solution is measured to be four times more than that of pure 20 wt% KOH. Moreover, the addition of NH2OH increases the undercutting at convex corners and enhances the etch selectivity between Si and SiO2.

Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

PubMed

Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

2017-10-01

To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

NASA Astrophysics Data System (ADS)

Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

2018-04-01

A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

Inorganic Bi/In thermal resist as a high-etch-ratio patterning layer for CF4/CHF3/O2 plasma etch

NASA Astrophysics Data System (ADS)

Tu, Yuqiang; Chapman, Glenn H.; Peng, Jun

2004-05-01

Bimetallic thin films containing indium and with low eutectic points, such as Bi/In, have been found to form highly sensitive thermal resists. They can be exposed by lasers with a wide range of wavelengths and be developed by diluted RCA2 solutions. The exposed bimetallic resist Bi/In can work as an etch masking layer for alkaline-based (KOH, TMAH and EDP) "wet" Si anisotropic etching. Current research shows that it can also act as a patterning and masking layer for Si and SiO2 plasma "dry" etch using CF4/CHF3. The profile of etched structures can be tuned by adding CHF3 and other gases such as Ar, and by changing the CF4/CHF3 ratio. Depending on the fluorocarbon plasma etching recipe the etch rate of laser exposed Bi/In can be as low as 0.1nm/min, 500 times lower than organic photoresists. O2 plasma ashing has little etching effect on exposed Bi/In, indicating that laser exposure is an oxidation process. Experiment result shows that single metal Indium film and bilayer Sn/In exhibit thermal resist characteristics but at higher exposure levels. They can be developed in diluted RCA2 solution and used as etch mask layers for Si anisotropic etch and plasma etch.

Controlled in situ etch-back

NASA Technical Reports Server (NTRS)

Mattauch, R. J.; Seabaugh, A. C. (Inventor)

1981-01-01

A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

Method for anisotropic etching in the manufacture of semiconductor devices

NASA Technical Reports Server (NTRS)

Koontz, Steven L. (Inventor); Cross, Jon B. (Inventor)

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by hyperthermal atomic oxygen beams (translational energies of 0.2 to 20 eV, preferably 1 to 10 eV). Etching with hyperthermal oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask protected areas.

Method for anisotropic etching in the manufacture of semiconductor devices

DOEpatents

Koontz, Steven L.; Cross, Jon B.

1993-01-01

Hydrocarbon polymer coatings used in microelectronic manufacturing processes are anisotropically etched by atomic oxygen beams (translational energies of 0.2-20 eV, preferably 1-10 eV). Etching with hyperthermal (kinetic energy>1 eV) oxygen atom species obtains highly anisotropic etching with sharp boundaries between etched and mask-protected areas.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin Yunpeng; Sawin, Herbert H.

The impact of etching kinetics and etching chemistries on surface roughening was investigated by etching thermal silicon dioxide and low-k dielectric coral materials in C{sub 4}F{sub 8}/Ar plasma beams in an inductive coupled plasma beam reactor. The etching kinetics, especially the angular etching yield curves, were measured by changing the plasma pressure and the feed gas composition which influence the effective neutral-to-ion flux ratio during etching. At low neutral-to-ion flux ratios, the angular etching yield curves are sputteringlike, with a peak around 60 deg. -70 deg. off-normal angles; the surface at grazing ion incidence angles becomes roughened due to ionmore » scattering related ion-channeling effects. At high neutral-to-ion flux ratios, ion enhanced etching dominates and surface roughening at grazing angles is mainly caused by the local fluorocarbon deposition induced micromasking mechanism. Interestingly, the etched surfaces at grazing angles remain smooth for both films at intermediate neutral-to-ion flux ratio regime. Furthermore, the oxygen addition broadens the region over which the etching without roughening can be performed.« less

Scanning electron microscopy evaluation of the effect of etching agents on human enamel surface.

PubMed

Zanet, Caio G; Arana-Chavez, Victor E; Fava, Marcelo

2006-01-01

Acid etching promotes microporosities on enamel surface, which provide a better bonding surface to adhesive materials. The purpose of this study was to comparatively analyze the microstructure of enamel surface after etching with 37% phosphoric acid or with two self-etching primers, Non-rinse conditioner (NRC) and Clearfil SE Bond (CSEB) using scanning electron microscopy. Thirty sound premolars were divided into 3 groups with ten teeth each: Group 1: the buccal surface was etched with 37% phosphoric acid for 15 seconds; Group 2: the buccal surface was etched with NRC for 20 seconds; Group 3: the buccal surface was etched with CSEB for 20 seconds. Teeth from Group 1 were rinsed with water; teeth from all groups were air-dried for 15 seconds. After that, all specimens were processed for scanning electron microscopy and analyzed in a Jeol 6100 SEM. The results showed deeper etching when the enamel surface was etched with 37% phosphoric acid, followed by NRC and CSEB. It is concluded that 37% phosphoric acid is still the best agent for a most effective enamel etching.

Enhancement of Device Performances in GaN-Based Light-Emitting Diodes Using Nano-Sized Surface Pit.

PubMed

Yeon, Seunghwan; Son, Taejoon; Shin, Dong Su; Jung, Kyung-Young; Park, Jinsub

2015-07-01

We report the improvement in optical and electrical properties of GaN-based green light-emitting diodes (LEDs) with nano-sized etch pits formed by the surface chemical etching. In order to control the density and sizes of etch pits formed on top surface of green LEDs, H3PO4 solution is used as a etchant with different etching time. When the etching time was increased from 0 min to 20 min, both the etch pit size and density were gradually increased. The improvement of extraction efficiency of LEDs using surface etching method can be attributed to the enlarged escape angle of generated photon by roughened p-GaN surface. The finite-difference time-domain (FDTD) simulation results well agreed with experimentally observed results. Moreover, the LED with etched p-GaN surface for 5 min shows the lowest leakage current value and the further increase of etching time resulting in increase of densities of the large-sized etch pit makes the degradation of electrical properties of LEDs.

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

MEMS and FOG Technologies for Tactical and Navigation Grade Inertial Sensors—Recent Improvements and Comparison

PubMed Central

Deppe, Olaf; Dorner, Georg; König, Stefan; Martin, Tim; Voigt, Sven; Zimmermann, Steffen

2017-01-01

In the following paper, we present an industry perspective of inertial sensors for navigation purposes driven by applications and customer needs. Microelectromechanical system (MEMS) inertial sensors have revolutionized consumer, automotive, and industrial applications and they have started to fulfill the high end tactical grade performance requirements of hybrid navigation systems on a series production scale. The Fiber Optic Gyroscope (FOG) technology, on the other hand, is further pushed into the near navigation grade performance region and beyond. Each technology has its special pros and cons making it more or less suitable for specific applications. In our overview paper, we present latest improvements at NG LITEF in tactical and navigation grade MEMS accelerometers, MEMS gyroscopes, and Fiber Optic Gyroscopes, based on our long-term experience in the field. We demonstrate how accelerometer performance has improved by switching from wet etching to deep reactive ion etching (DRIE) technology. For MEMS gyroscopes, we show that better than 1°/h series production devices are within reach, and for FOGs we present how limitations in noise performance were overcome by signal processing. The paper also intends a comparison of the different technologies, emphasizing suitability for different navigation applications, thus providing guidance to system engineers. PMID:28287483

New Methods of Sample Preparation for Atom Probe Specimens

NASA Technical Reports Server (NTRS)

Kuhlman, Kimberly, R.; Kowalczyk, Robert S.; Ward, Jennifer R.; Wishard, James L.; Martens, Richard L.; Kelly, Thomas F.

2003-01-01

Magnetite is a common conductive mineral found on Earth and Mars. Disk-shaped precipitates approximately 40 nm in diameter have been shown to have manganese and aluminum concentrations. Atom-probe field-ion microscopy (APFIM) is the only technique that can potentially quantify the composition of these precipitates. APFIM will be used to characterize geological and planetary materials, analyze samples of interest for geomicrobiology; and, for the metrology of nanoscale instrumentation. Prior to APFIM sample preparation was conducted by electropolishing, the method of sharp shards (MSS), or Bosch process (deep reactive ion etching) with focused ion beam (FIB) milling as a final step. However, new methods are required for difficult samples. Many materials are not easily fabricated using electropolishing, MSS, or the Bosch process, FIB milling is slow and expensive, and wet chemistry and the reactive ion etching are typically limited to Si and other semiconductors. APFIM sample preparation using the dicing saw is commonly used to section semiconductor wafers into individual devices following manufacture. The dicing saw is a time-effective method for preparing high aspect ratio posts of poorly conducting materials. Femtosecond laser micromachining is also suitable for preparation of posts. FIB time required is reduced by about a factor of 10 and multi-tip specimens can easily be fabricated using the dicing saw.

Structured Antireflective Coating for Silicon at Submillimeter Frequencies

NASA Astrophysics Data System (ADS)

Padilla, Estefania

2018-01-01

Observations at millimeter and submillimeter wavelengths are useful for many astronomical studies, such as the polarization of the cosmic microwave background or the formation and evolution of galaxy clusters. In order to allow observations over a broad spectral bandwidth (approximatively from 70 to 420 GHz), innovative broadband anti-reflective (AR) optics must be utilized in submillimeter telescopes. Due to its low loss and high refractive index, silicon is a fine optical material at these frequencies, but an AR coating with multiple layers is required to maximize its transmission over a wide bandwidth. Structured multilayer AR coatings for silicon are currently being developed at Caltech and JPL. The development process includes the design of the structured layers with commercial electromagnetic simulation software, the fabrication by using deep reactive ion etching, and the test of the transmission and reflection of the patterned wafers. Geometrical 3D patterns have successfully been etched at the surface of the silicon wafers creating up to 2 layers with different effective refractive indices. The transmission and reflection of single AR layer wafers, measured between 75 and 330 GHz, are close to the simulation predictions. These results allow the development of new designs with 5 or 6 AR layers in order to improve the bandwidth and transmission of the silicon AR coatings.

Sub-100 nm gold nanohole-enhanced Raman scattering on flexible PDMS sheets.

PubMed

Lee, Seunghyun; Ongko, Andry; Kim, Ho Young; Yim, Sang-Gu; Jeon, Geumhye; Jeong, Hee Jin; Lee, Seungwoo; Kwak, Minseok; Yang, Seung Yun

2016-08-05

Surface-enhanced Raman spectroscopy (SERS) is a highly sensitive vibrational spectroscopy technique enabling detection of multiple analytes at the molecular level in a nondestructive and rapid manner. In this work, we introduce a new approach to fabricate deep subwavelength-scaled (sub-100 nm) metallic nanohole arrays (quasi-3D metallic nanoholes) on flexible and highly efficient SERS substrates. Target structures have been fabricated using a two-step process consisting of (i) direct pattern transfer of spin-coated polymer films onto polydimethylsiloxane (PDMS) substrates by plasma etching with transferred anodic aluminum oxide masks, and (ii) producing SERS-active substrates by functionalization of the etched polymeric films followed by Au deposition. Such an all-dry, top-down lithographic approach enables on-demand patterning of SERS-active metallic nanoholes with high structural fidelity even onto flexible and stretchable substrates, thus making possible multiple sensing modes in a versatile fashion. For example, metallic nanoholes on flexible PDMS substrates are highly amenable to their integration with curved glass sticks, which can be used in optical fiber-integrated SERS systems. Au surfaces immobilized by probe DNA molecules show a selective enhancement of Raman scattering with Cy5-labeled complementary DNA (as compared to flat Au surfaces), demonstrating the potential of using the quasi-3D Au nanohole arrays for bio-sensing applications.

Sub-100 nm gold nanohole-enhanced Raman scattering on flexible PDMS sheets

NASA Astrophysics Data System (ADS)

Lee, Seunghyun; Ongko, Andry; Kim, Ho Young; Yim, Sang-Gu; Jeon, Geumhye; Jeong, Hee Jin; Lee, Seungwoo; Kwak, Minseok; Yang, Seung Yun

2016-08-01

Surface-enhanced Raman spectroscopy (SERS) is a highly sensitive vibrational spectroscopy technique enabling detection of multiple analytes at the molecular level in a nondestructive and rapid manner. In this work, we introduce a new approach to fabricate deep subwavelength-scaled (sub-100 nm) metallic nanohole arrays (quasi-3D metallic nanoholes) on flexible and highly efficient SERS substrates. Target structures have been fabricated using a two-step process consisting of (i) direct pattern transfer of spin-coated polymer films onto polydimethylsiloxane (PDMS) substrates by plasma etching with transferred anodic aluminum oxide masks, and (ii) producing SERS-active substrates by functionalization of the etched polymeric films followed by Au deposition. Such an all-dry, top-down lithographic approach enables on-demand patterning of SERS-active metallic nanoholes with high structural fidelity even onto flexible and stretchable substrates, thus making possible multiple sensing modes in a versatile fashion. For example, metallic nanoholes on flexible PDMS substrates are highly amenable to their integration with curved glass sticks, which can be used in optical fiber-integrated SERS systems. Au surfaces immobilized by probe DNA molecules show a selective enhancement of Raman scattering with Cy5-labeled complementary DNA (as compared to flat Au surfaces), demonstrating the potential of using the quasi-3D Au nanohole arrays for bio-sensing applications.

Device properties of nanopore PN junction Si for photovoltaic application

NASA Astrophysics Data System (ADS)

Jin, Hyunjong; Chang, Te Wei; Liu, Logan Gang

2011-09-01

Improvement of energy conversion efficiency of solar cells has led to innovative approaches, in particular the introduction of nanopillar photovoltaics [1]. Previous work on nanopillar Si photovoltaic has shown broadband reduction in optical reflection and enhancement of absorption [2]. Radial or axial PN junctions [3, 4] have been of high interest for improved photovoltaic devices. However, with the PN junction incorporated as part of the pillar, the discreteness of individual pillar requires additional conductive layer that would electrically short the top of each pillar for efficient carrier extraction. The fragile structure of the surface pillars would also require a protection layer for possible mechanical scratch to prevent pillars from breaking. Any additional layer that is applied, either for electrical contact or for mechanical properties may introduce additional recombination sites and also reduce the actual light absorption by the photovoltaic material. In this paper, nanopore Si photovoltaics that not only provides the advantages but also addresses the challenges of nanopillers is demonstrated. PN junction substrate of 250 nm thick N-type polycrystalline Si on P-type Si wafer is prepared. The nanopore structure is formed by using anodized aluminum oxide (AAO) as an etching mask against deep reactive ionic etching (DRIE). The device consists of semi-ordered pores of ~70 nm diameter.

Commissioning the cryogenic system of the first LHC sector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Millet, F.; Claudet, S.; Ferlin, G.

2007-12-01

The LHC machine, composed of eight sectors with superconducting magnets and accelerating cavities, requires a complex cryogenic system providing high cooling capacities (18 kW equivalent at 4.5 K and 2.4 W at 1.8 K per sector produced in large cold boxes and distributed via 3.3-km cryogenic transfer lines). After individual reception tests of the cryogenic subsystems (cryogen storages, refrigerators, cryogenic transfer lines and distribution boxes) performed since 2000, the commissioning of the cryogenic system of the first LHC sector has been under way since November 2006. After a brief introduction to the LHC cryogenic system and its specificities, the commissioningmore » is reported detailing the preparation phase (pressure and leak tests, circuit conditioning and flushing), the cool-down sequences including the handling of cryogenic fluids, the magnet powering phase and finally the warm-up. Preliminary conclusions on the commissioning of the first LHC sector will be drawn with the review of the critical points already solved or still pending. The last part of the paper reports on the first operational experience of the LHC cryogenic system in the perspective of the commissioning of the remaining LHC sectors and the beam injection test.« less

Influence of Different Etching Modes on Bond Strength to Enamel using Universal Adhesive Systems.

PubMed

Diniz, Ana Cs; Bandeca, Matheus C; Pinheiro, Larissa M; Dos Santosh Almeida, Lauber J; Torres, Carlos Rg; Borges, Alvaro H; Pinto, Shelon Cs; Tonetto, Mateus R; De Jesus Tavarez, Rudys R; Firoozmand, Leily M

2016-10-01

The adhesive systems and the techniques currently used are designed to provide a more effective adhesion with reduction of the protocol application. The objective of this study was to evaluate the bond strength of universal adhesive systems on enamel in different etching modes (self-etch and total etch). The mesial and distal halves of 52 bovine incisors, healthy, freshly extracted, were used and divided into seven experimental groups (n = 13). The enamel was treated in accordance with the following experimental conditions: FUE-Universal System - Futurabond U (VOCO) with etching; FUWE - Futurabond U (VOCO) without etching; SB-Total Etch System - Single Bond 2 (3M); SBUE-Universal System - Single Bond Universal (3M ESPE) with etching; SBUWE - Single Bond Universal (3M ESPE) without etching; CLE-Self-etch System - Clearfil SE Bond (Kuraray) was applied with etching; CLWE - Clearfil SE Bond (Kuraray) without etching. The specimens were made using the composite spectrum TPH (Dentsply) and stored in distilled water (37 ± 1°C) for 1 month. The microshear test was performed using the universal testing machine EMIC DL 2000 with the crosshead speed of 0.5 mm/minute. The bond strength values were analyzed using statistical tests (Kruskal-Wallis test and Mann-Whitney test) with Bonferroni correction. There was no statistically significant difference between groups (p < 0.05), where FUE (36.83 ± 4.9 MPa) showed the highest bond strength values and SBUWE (18.40 ± 2.2 MPa) showed the lowest bond strength values. The analysis of adhesive interface revealed that most failures occurred between the interface composite resin and adhesive. The universal adhesive system used in dental enamel varies according to the trademark, and the previous enamel etching for universal systems and the self-etch both induced greater bond strength values. Selective enamel etching prior to the application of a universal adhesive system is a relevant strategy for better performance bonding.

Single Etch-Pit Shape on Off-Angled 4H-SiC(0001) Si-Face Formed by Chlorine Trifluoride

NASA Astrophysics Data System (ADS)

Hatayama, Tomoaki; Tamura, Tetsuya; Yano, Hiroshi; Fuyuki, Takashi

2012-07-01

The etch pit shape of an off-angled 4H-SiC Si-face formed by chlorine trifluoride (ClF3) in nitrogen (N2) ambient has been studied. One type of etch pit with a crooked hexagonal shape was formed at an etching temperature below 500 °C. The angle of the etch pit measured from a cross-sectional atomic force microscopy image was about 10° from the [11bar 20] view. The dislocation type of the etch pit was discussed in relation to the etch pit shape and an electron-beam-induced current image.

Photoelectrochemical fabrication of spectroscopic diffraction gratings, phase 2

NASA Technical Reports Server (NTRS)

Rauh, R. David; Carrabba, Michael M.; Li, Jianguo; Cartland, Robert F.; Hachey, John P.; Mathew, Sam

1990-01-01

This program was directed toward the production of Echelle diffraction gratings by a light-driven, electrochemical etching technique (photoelectrochemical etching). Etching is carried out in single crystal materials, and the differential rate of etching of the different crystallographic planes used to define the groove profiles. Etching of V-groove profiles was first discovered by us during the first phase of this project, which was initially conceived as a general exploration of photoelectrochemical etching techniques for grating fabrication. This highly controllable V-groove etching process was considered to be of high significance for producing low pitch Echelles, and provided the basis for a more extensive Phase 2 investigation.

Low-damage direct patterning of silicon oxide mask by mechanical processing

PubMed Central

2014-01-01

To realize the nanofabrication of silicon surfaces using atomic force microscopy (AFM), we investigated the etching of mechanically processed oxide masks using potassium hydroxide (KOH) solution. The dependence of the KOH solution etching rate on the load and scanning density of the mechanical pre-processing was evaluated. Particular load ranges were found to increase the etching rate, and the silicon etching rate also increased with removal of the natural oxide layer by diamond tip sliding. In contrast, the local oxide pattern formed (due to mechanochemical reaction of the silicon) by tip sliding at higher load was found to have higher etching resistance than that of unprocessed areas. The profile changes caused by the etching of the mechanically pre-processed areas with the KOH solution were also investigated. First, protuberances were processed by diamond tip sliding at lower and higher stresses than that of the shearing strength. Mechanical processing at low load and scanning density to remove the natural oxide layer was then performed. The KOH solution selectively etched the low load and scanning density processed area first and then etched the unprocessed silicon area. In contrast, the protuberances pre-processed at higher load were hardly etched. The etching resistance of plastic deformed layers was decreased, and their etching rate was increased because of surface damage induced by the pre-processing. These results show that etching depth can be controlled by controlling the etching time through natural oxide layer removal and mechanochemical oxide layer formation. These oxide layer removal and formation processes can be exploited to realize low-damage mask patterns. PMID:24948891

Ion track etching revisited: II. Electronic properties of aged tracks in polymers

NASA Astrophysics Data System (ADS)

Fink, D.; Muñoz Hernández, G.; Cruz, S. A.; Garcia-Arellano, H.; Vacik, J.; Hnatowicz, V.; Kiv, A.; Alfonta, L.

2018-02-01

We compile here electronic ion track etching effects, such as capacitive-type currents, current spike emission, phase shift, rectification and background currents that eventually emerge upon application of sinusoidal alternating voltages across thin, aged swift heavy ion-irradiated polymer foils during etching. Both capacitive-type currents and current spike emission occur as long as obstacles still prevent a smooth continuous charge carrier passage across the foils. In the case of sufficiently high applied electric fields, these obstacles are overcome by spike emission. These effects vanish upon etchant breakthrough. Subsequent transmitted currents are usually of Ohmic type, but shortly after breakthrough (during the track' core etching) often still exhibit deviations such as strong positive phase shifts. They stem from very slow charge carrier mobility across the etched ion tracks due to retarding trapping/detrapping processes. Upon etching the track's penumbra, one occasionally observes a split-up into two transmitted current components, one with positive and another one with negative phase shifts. Usually, these phase shifts vanish when bulk etching starts. Current rectification upon track etching is a very frequent phenomenon. Rectification uses to inverse when core etching ends and penumbra etching begins. When the latter ends, rectification largely vanishes. Occasionally, some residual rectification remains which we attribute to the aged polymeric bulk itself. Last not least, we still consider background currents which often emerge transiently during track etching. We could assign them clearly to differences in the electrochemical potential of the liquids on both sides of the etched polymer foils. Transient relaxation effects during the track etching cause their eventually chaotic behaviour.

PIP-II Cryogenic System and the Evolution of Superfluid Helium Cryogenic Plant Specifications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chakravarty, Anindya; Rane, Tejas; Klebaner, Arkadiy

2017-01-01

PIP-II cryogenic system: Superfluid Helium Cryogenic Plant (SHCP) and Cryogenic Distribution System (CDS) connecting the SHCP and the SC Linac (25 cryomodules) PIP-II Cryogenic System Static and dynamic heat loads for the SC Linac and static load of CDS listed out Simulation study carried out to compute SHe flow requirements for each cryomodule Comparison between the flow requirements of the cryomodules for the CW and pulsed modes of operation presented From computed heat load and pressure drop values, SHCP basic specifications evolved.

Method of measuring heat influx of a cryogenic transfer system

DOEpatents

Niemann, Ralph C.; Zelipsky, Steven A.; Rezmer, Ronald R.; Smelser, Peter

1981-01-01

A method is provided for measuring the heat influx of a cryogenic transfer system. A gaseous phase of the cryogen used during normal operation of the system is passed through the system. The gaseous cryogen at the inlet to the system is tempered to duplicate the normal operating temperature of the system inlet. The temperature and mass flow rate of the gaseous cryogen is measured at the outlet of the system, and the heat capacity of the cryogen is determined. The heat influx of the system is then determined from known thermodynamic relationships.

Shear bond strength of composite to deep dentin after treatment with two different collagen cross-linking agents at varying time intervals.

PubMed

Srinivasulu, S; Vidhya, S; Sujatha, M; Mahalaxmi, S

2012-01-01

This in vitro study evaluated the shear bond strength of composite resin to deep dentin using a total etch adhesive after treatment with two collagen cross-linking agents at varying time intervals. Thirty freshly extracted human maxillary central incisors were sectioned longitudinally into equal mesial and distal halves (n=60). The proximal deep dentin was exposed, maintaining a remaining dentin thickness (RDT) of approximately 1 mm. The specimens were randomly divided into three groups based on the surface treatment of dentin prior to bonding as follows: group I (n=12, control): no prior dentin surface treatment; group II (n=24): dentin surface pretreated with 10% sodium ascorbate; and group III (n=24): dentin surface pretreated with 6.5% proanthocyanidin. Groups II and III were further subdivided into two subgroups of 12 specimens each, based on the pretreatment time of five minutes (subgroup A) and 10 minutes (subgroup B). Shear bond strength of the specimens was tested with a universal testing machine, and the data were statistically analyzed. Significantly higher shear bond strength to deep dentin was observed in teeth treated with 10% sodium ascorbate (group II) and 6.5% proanthocyanidin (group III) compared to the control group (group I). Among the collagen cross-linkers used, specimens treated with proanthocyanidin showed significantly higher shear bond strength values than those treated with sodium ascorbate. No significant difference was observed between the five-minute and 10-minute pretreatment times in groups II and III. It can be concluded that dentin surface pretreatment with both 10% sodium ascorbate and 6.5% proanthocyanidin resulted in significant improvement in bond strength of resin composite to deep dentin.

Influence of Application Time and Etching Mode of Universal Adhesives on Enamel Adhesion.

PubMed

Sai, Keiichi; Takamizawa, Toshiki; Imai, Arisa; Tsujimoto, Akimasa; Ishii, Ryo; Barkmeier, Wayne W; Latta, Mark A; Miyazaki, Masashi

2018-01-01

To investigate the influence of application time and etching mode of universal adhesives on enamel adhesion. Five universal adhesives, Adhese Universal, Bondmer Lightless, Clearfil Universal Bond Quick, G-Premio Bond, and Scotchbond Universal, were used. Bovine incisors were prepared and divided into four groups of ten teeth each. SBS, Ra, and SFE were determined after the following procedures: 1. self-etch mode with immediate air blowing after application (IA); 2. self-etch mode with prolonged application time (PA); 3. etch-and-rinse mode with IA; 4. etch-and-rinse mode with PA. After 24-h water storage, the bonded assemblies were subjected to shear bond strength (SBS) tests. For surface roughness (Ra) and surface free energy (SFE) measurements, the adhesives were simply applied to the enamel and rinsed with acetone and water before the measurements were carried out. Significantly higher SBS and Ra values were obtained with etch-and-rinse mode than with self-etch mode regardless of the application time or type of adhesive. Although most adhesives showed decreased SFE values with increased application time in self-etch mode, SFE values in etch-and-rinse mode were dependent on the adhesive type and application time. Etching mode, application time, and type of adhesive significantly influenced the SBS, Ra, and SFE values.

Etching and Growth of GaAs

NASA Technical Reports Server (NTRS)

Seabaugh, A. C.; Mattauch, R., J.

1983-01-01

In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

Planetary Radar Imaging with the Deep-Space Network's 34 Meter Uplink Array

NASA Technical Reports Server (NTRS)

Vilnrotter, V.; Tsao, P.; Lee, D.; Cornish, T.; Jao, J.; Slade, M.

2011-01-01

A coherent uplink array consisting of up to three 34-meter antennas of NASA's Deep Space Network has been developed for the primary purpose of increasing EIRP at the spacecraft. Greater EIRP ensures greater reach, higher uplink data rates for command and configuration control, as well as improved search and recovery capabilities during spacecraft emergencies. It has been conjectured that Doppler-delay radar imaging of lunar targets can be extended to planetary imaging, where the long baseline of the uplink array can provide greater resolution than a single antenna, as well as potentially higher EIRP. However, due to the well known R-4 loss in radar links, imaging of distant planets is a very challenging endeavor, requiring accurate phasing of the Uplink Array antennas, cryogenically cooled low-noise receiver amplifiers, and sophisticated processing of the received data to extract the weak echoes characteristic of planetary radar. This article describes experiments currently under way to image the planets Mercury and Venus, highlights improvements in equipment and techniques, and presents planetary images obtained to date with two 34 meter antennas configured as a coherently phased Uplink Array.

Planetary Radar Imaging with the Deep-Space Network's 34 Meter Uplink Array

NASA Technical Reports Server (NTRS)

Vilnrotter, Victor; Tsao, P.; Lee, D.; Cornish, T.; Jao, J.; Slade, M.

2011-01-01

A coherent Uplink Array consisting of two or three 34-meter antennas of NASA's Deep Space Network has been developed for the primary purpose of increasing EIRP at the spacecraft. Greater EIRP ensures greater reach, higher uplink data rates for command and configuration control, as well as improved search and recovery capabilities during spacecraft emergencies. It has been conjectured that Doppler-delay radar imaging of lunar targets can be extended to planetary imaging, where the long baseline of the uplink array can provide greater resolution than a single antenna, as well as potentially higher EIRP. However, due to the well known R4 loss in radar links, imaging of distant planets is a very challenging endeavor, requiring accurate phasing of the Uplink Array antennas, cryogenically cooled low-noise receiver amplifiers, and sophisticated processing of the received data to extract the weak echoes characteristic of planetary radar. This article describes experiments currently under way to image the planets Mercury and Venus, highlights improvements in equipment and techniques, and presents planetary images obtained to date with two 34 meter antennas configured as a coherently phased Uplink Array.

High-performance etching of multilevel phase-type Fresnel zone plates with large apertures

NASA Astrophysics Data System (ADS)

Guo, Chengli; Zhang, Zhiyu; Xue, Donglin; Li, Longxiang; Wang, Ruoqiu; Zhou, Xiaoguang; Zhang, Feng; Zhang, Xuejun

2018-01-01

To ensure the etching depth uniformity of large-aperture Fresnel zone plates (FZPs) with controllable depths, a combination of a point source ion beam with a dwell-time algorithm has been proposed. According to the obtained distribution of the removal function, the latter can be used to optimize the etching time matrix by minimizing the root-mean-square error between the simulation results and the design value. Owing to the convolution operation in the utilized algorithm, the etching depth error is insensitive to the etching rate fluctuations of the ion beam, thereby reducing the requirement for the etching stability of the ion system. As a result, a 4-level FZP with a circular aperture of 300 mm was fabricated. The obtained results showed that the etching depth uniformity of the full aperture could be reduced to below 1%, which was sufficiently accurate for meeting the use requirements of FZPs. The proposed etching method may serve as an alternative way of etching high-precision diffractive optical elements with large apertures.

Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC

NASA Astrophysics Data System (ADS)

Sakwe, S. A.; Müller, R.; Wellmann, P. J.

2006-04-01

We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit for the first time reproducible etching conditions were established (calibration plot, etching rate versus temperature and time); the etching procedure is time independent, i.e. no altering in KOH melt composition takes place, and absolute melt temperature values can be set. The paper describes this advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH. We present updated, absolute KOH etching parameters of n-type SiC and new absolute KOH etching parameters for low and highly p-type doped SiC, which are used for quantitative defect analysis. As best defect etching recipes we found T=530 °C/5 min (activation energy: 16.4 kcal/mol) and T=500 °C/5 min (activation energy: 13.5 kcal/mol) for n-type and p-type SiC, respectively.

Overview of the Liquid Argon Cryogenics for the Short Baseline Neutrino Program (SBN) at Fermilab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Norris, Barry; Bremer, Johan; Chalifour, Michel

2017-01-01

The Short-Baseline Neutrino (SBN) physics program will involve three LAr-TPC detectors located along the Booster Neutrino Beam (BNB) at Fermilab. This new SBN Program will deliver a rich and compelling physics opportunity, including the ability to resolve a class of experimental anomalies in neutrino physics and to perform the most sensitive search to date for sterile neutrinos at the eV mass-scale through both appearance and disappearance oscillation channels. The Program will be composed of an existing and operational detector known as Micro Boone (170 ton LAr mass) plus two new experiments known as the SBN Near Detector (SBND, ~ 260more » ton) and the SBN Far Detector (SBN-FD, ~ 600 tons). Fermilab is now building two new facilities to house the experiments and incorporate all cryogenic and process systems to operate these detectors beginning in the 2018-2019 time frame. The SBN cryogenics are a collaborative effort between Fermilab and CERN. The SBN cryogenic systems for both detectors are composed of several sub-systems: External/Infrastructure (or LN2), Proximity (or LAr), and internal cryogenics. For each detector the External/Infrastructure cryogenics includes the equipment used to store and the cryogenic fluids needed for the operation of the Proximity cryogenics, including the LN2 and LAr storage facilities. The Proximity cryogenics consists of all the systems that take the cryogenic fluids from the external/infrastructure cryogenics and deliver them to the internal at the required pressure, temperature, purity and mass flow rate. It includes the condensers, the LAr and GAr purification systems, the LN2 and LAr phase separators, and the interconnecting piping. The Internal cryogenics is comprised of all the cryogenic equipment located within the cryostats themselves, including the GAr and LAr distribution piping and the piping required to cool down the cryostats and the detectors. These cryogenic systems will be engineered, manufactured, commissioned, and qualified by an international engineering team. This contribution presents the performance, the functional requirements and the modes of operation of the SBN cryogenics, and details the current status of the design, present and future needs.« less

Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Mishkat-Ul-Masabih, Saadat; Leonard, John T.; Feezell, Daniel F.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2017-01-01

We investigate the photo-electrochemical (PEC) etching of Si-doped GaN samples grown on nonpolar GaN substrates, using a KOH/K2S2O8 solution and illuminated by a Xe arc lamp or a Q-switched 355 nm laser. The etch rate with the arc lamp decreased as the doping concentration increased, and the etching stopped for concentrations above 7.7 × 1018 cm-3. The high peak intensity of the Q-switched laser extended the etchable concentration to 2.4 × 1019 cm-3, with an etch rate of 14 nm/min. Compositionally selective etching was demonstrated, with an RMS surface roughness of 1.6 nm after etching down to an n-Al0.20Ga0.80N etch stop layer.

Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

2017-04-01

Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the features during the etch process. Herein we will also demonstrate a test case on how a combination or plasma assisted and plasma free etch techniques has the potential to improve process performance of a 193nm immersion based self aligned quandruple patterning (SAQP) for BEOL compliant films (an example shown in Fig 2). In addition, we will also present on the application of gas etches for (1) profile improvement, (2) selective mandrel pull (3) critical dimension trim of mandrels, with an analysis of advantages over conventional techniques in terms of LER and EPE.

Radicals are required for thiol etching of gold particles

PubMed Central

Dreier, Timothy A.

2016-01-01

Etching of gold with excess thiol ligand is used in both synthesis and analysis of gold particles. Mechanistically, the process of etching gold with excess thiol is opaque. Previous studies have obliquely considered the role of oxygen in thiolate etching of gold. Herein, we show that oxygen or a radical initator is a necessary component for efficient etching of gold by thiolates. Attenuation of the etching process by radical scavengers in the presence of oxygen, and the restoration of activity by radical initiators under inert atmosphere, strongly implicate the oxygen radical. These data led us to propose an atomistic mechanism in which the oxygen radical initiates the etching process. PMID:26089294

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

NASA Astrophysics Data System (ADS)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage.

PubMed

Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

2018-01-01

This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond.

Bonding effectiveness of self-etch adhesives to dentin after 24 h water storage

PubMed Central

Sarr, Mouhamed; Benoist, Fatou Leye; Bane, Khaly; Aidara, Adjaratou Wakha; Seck, Anta; Toure, Babacar

2018-01-01

Purpose: This study evaluated the immediate bonding effectiveness of five self-etch adhesive systems bonded to dentin. Materials and Methods: The microtensile bond strength of five self-etch adhesives systems, including one two-step and four one-step self-etch adhesives to dentin, was measured. Human third molars had their superficial dentin surface exposed, after which a standardized smear layer was produced using a medium-grit diamond bur. The selected adhesives were applied according to their respective manufacturer's instructions for μTBS measurement after storage in water at 37°C for 24 h. Results: The μTBS varied from 11.1 to 44.3 MPa; the highest bond strength was obtained with the two-step self-etch adhesive Clearfil SE Bond and the lowest with the one-step self-etch adhesive Adper Prompt L-Pop. Pretesting failures mainly occurring during sectioning with the slow-speed diamond saw were observed only with the one-step self-etch adhesive Adper Prompt L-Pop (4 out of 18). Conclusions: When bonded to dentin, the self-etch adhesives with simplified application procedures (one-step self-etch adhesives) still underperform as compared to the two-step self-etch adhesive Clearfil SE Bond. PMID:29674814