22 W coherent GaAlAs amplifier array with 400 emitters

NASA Technical Reports Server (NTRS)

Krebs, D.; Herrick, R.; No, K.; Harting, W.; Struemph, F.

1991-01-01

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

Four-port coupled channel-guide device based on 2D photonic crystal structure

NASA Astrophysics Data System (ADS)

Camargo, Edilson A.; Chong, Harold M. H.; De La Rue, Richard M.

2004-12-01

We have fabricated and measured a four-port coupled channel-waveguide device using W1 channel waveguides oriented along ΓK directions in a two-dimensional (2D) hole-based planar photonic crystal (PhC) based on silicon-on-insulator (SOI) waveguide material, at operation wavelengths around 1550 nm. 2D FDTD simulations and experimental results are shown and compared. The structure has been designed using a mode conversion approach, combined with coupled-mode concepts. The overall length of the photonic crystal structure is typically about 39 μm and the structure has been fabricated using a combination of direct-write electron-beam lithography (EBL) and dry-etch processing. Devices were measured using a tunable laser with end-fire coupling into the planar structure.

Qualitative analysis of gain spectra of InGaAlAs/InP lasing nano-heterostructure

NASA Astrophysics Data System (ADS)

Lal, Pyare; Yadav, Rashmi; Sharma, Meha; Rahman, F.; Dalela, S.; Alvi, P. A.

2014-08-01

This paper deals with the studies of lasing characteristics along with the gain spectra of compressively strained and step SCH based In0.71Ga0.21Al0.08As/InP lasing nano-heterostructure within TE polarization mode, taking into account the variation in well width of the single quantum well of the nano-heterostructure. In addition, the compressive conduction and valence bands dispersion profiles for quantum well of the material composition In0.71Ga0.21Al0.08As at temperature 300 K and strain 1.12% have been studied using 4 × 4 Luttinger Hamiltonian. For the proposed nano-heterostructure, the quantum well width dependence of differential gain, refractive index change and relaxation oscillation frequency with current density have been studied. Moreover, the G-J characteristics of the nano-heterostructure at different well widths have also been investigated, that provided significant information about threshold current density, threshold gain and transparency current density. The results obtained in the study of nano-heterostructure suggest that the gain and relaxation oscillation frequency both are decreased with increasing quantum well width but the required lasing wavelength is found to shift towards higher values. On behalf of qualitative analysis of the structure, the well width of 6 nm is found more suitable for lasing action at the wavelength of 1.55 μm due to minimum optical attenuation and minimum dispersion within the waveguide. The results achieved are, therefore, very important in the emerging area of nano-optoelectronics.

Zak phase induced multiband waveguide by two-dimensional photonic crystals.

PubMed

Yang, Yuting; Xu, Tao; Xu, Yun Fei; Hang, Zhi Hong

2017-08-15

Interface states in photonic crystals provide efficient approaches to control the flow of light. Photonic Zak phase determines the bulk band properties of photonic crystals, and, by assembling two photonic crystals with different bulk band properties together, deterministic interface states can be realized. By translating each unit cell of a photonic crystal by half the lattice constant, another photonic crystal with identical common gaps but a different Zak phase at each photonic band can be created. By assembling these two photonic crystals together, multiband waveguide can thus be easily created and then experimentally characterized. Our experimental results have good agreement with numerical simulations, and the propagation properties of these measured interface states indicate that this new type of interface state will be a good candidate for future applications of optical communications.

Optical ridge waveguides in Nd:LGS crystal produced by combination of swift C5+ ion irradiation and precise diamond blade dicing

NASA Astrophysics Data System (ADS)

Cheng, Yazhou; Lv, Jinman; Akhmadaliev, Shavkat; Zhou, Shengqiang; Chen, Feng

2016-07-01

We report on the fabrication of optical ridge waveguides in Nd:LGS crystal by using combination of swift C5+ ion irradiation and precise diamond blade dicing. The ridge structures support guidance both at 632.8 nm and 1064 nm wavelength along the TE and TM polarizations. The lowest propagation losses of the ridge waveguide for the TM mode are ~1.6 dB/cm at 632.8 nm and ~1.2 dB/cm at 1064 nm, respectively. The investigation of micro-fluorescence spectra and micro-Raman spectra indicates that the Nd3+ luminescence features have been well preserved and the microstructure of the waveguide region has no significant change after C5+ ion irradiation.

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Serafimovich, P. G.; Stepikhova, M. V., E-mail: mst@ipm.sci-nnov.ru; Kazanskiy, N. L.

2016-08-15

The production technology of a photonic-crystal cavity formed as a group of holes in a silicon strip waveguide by ion-beam etching is described. The parasitic effect associated with hole conicity which develops upon hole formation by the given technology is studied. Numerical simulation shows that the hole-conicity induced decrease in the cavity quality factor can be compensated with consideration for the hole volume. The influence of the waveguide thickness on the resonance wavelength and quality factor of the photonic-crystal cavity is analyzed.

A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases

DOE PAGES

Belopolski, Ilya; Xu, Su -Yang; Koirala, Nikesh; ...

2017-03-24

Engineered lattices in condensed matter physics, such as cold-atom optical lattices or photonic crystals, can have properties that are fundamentally different from those of naturally occurring electronic crystals. We report a novel type of artificial quantum matter lattice. Our lattice is a multilayer heterostructure built from alternating thin films of topological and trivial insulators. Each interface within the heterostructure hosts a set of topologically protected interface states, and by making the layers sufficiently thin, we demonstrate for the first time a hybridization of interface states across layers. In this way, our heterostructure forms an emergent atomic chain, where the interfacesmore » act as lattice sites and the interface states act as atomic orbitals, as seen from our measurements by angle-resolved photoemission spectroscopy. By changing the composition of the heterostructure, we can directly control hopping between lattice sites. We realize a topological and a trivial phase in our superlattice band structure. We argue that the superlattice may be characterized in a significant way by a one-dimensional topological invariant, closely related to the invariant of the Su-Schrieffer-Heeger model. Our topological insulator heterostructure demonstrates a novel experimental platform where we can engineer band structures by directly controlling how electrons hop between lattice sites.« less

A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belopolski, Ilya; Xu, Su -Yang; Koirala, Nikesh

Engineered lattices in condensed matter physics, such as cold-atom optical lattices or photonic crystals, can have properties that are fundamentally different from those of naturally occurring electronic crystals. We report a novel type of artificial quantum matter lattice. Our lattice is a multilayer heterostructure built from alternating thin films of topological and trivial insulators. Each interface within the heterostructure hosts a set of topologically protected interface states, and by making the layers sufficiently thin, we demonstrate for the first time a hybridization of interface states across layers. In this way, our heterostructure forms an emergent atomic chain, where the interfacesmore » act as lattice sites and the interface states act as atomic orbitals, as seen from our measurements by angle-resolved photoemission spectroscopy. By changing the composition of the heterostructure, we can directly control hopping between lattice sites. We realize a topological and a trivial phase in our superlattice band structure. We argue that the superlattice may be characterized in a significant way by a one-dimensional topological invariant, closely related to the invariant of the Su-Schrieffer-Heeger model. Our topological insulator heterostructure demonstrates a novel experimental platform where we can engineer band structures by directly controlling how electrons hop between lattice sites.« less

Oxygen vacancies promoted interfacial charge carrier transfer of CdS/ZnO heterostructure for photocatalytic hydrogen generation.

PubMed

Xie, Ying Peng; Yang, Yongqiang; Wang, Guosheng; Liu, Gang

2017-10-01

The solid-state Z-scheme trinary/binary heterostructures show the advantage of utilizing the high-energy photogenerated charge carriers in photocatalysis. However, the key factors controlling such Z-scheme in the binary heterostructures are still unclear. In this paper, we showed that oxygen vacancies could act as an interface electron transfer mediator to promote the direct Z-scheme charge transfer process in binary semiconductor heterostructures of CdS/ZnS. Increasing the concentration of surface oxygen vacancies of ZnO crystal can greatly enhance photocatalytic hydrogen generation of CdS/ZnO heterostructure. This was attributed to the strengthened direct Z-scheme charge transfer process in CdS/ZnO, as evidenced by steady-state/time-resolved photoluminescence spectroscopy and selective photodeposition of metal particles on the heterostructure. Copyright © 2017 Elsevier Inc. All rights reserved.

Direct slow-light excitation in photonic crystal waveguides forming ultra-compact splitters.

PubMed

Zhang, Min; Groothoff, Nathaniel; Krüger, Asger Christian; Shi, Peixing; Kristensen, Martin

2011-04-11

Based on a series of 1x2 beam splitters, novel direct excitation of slow-light from input- to output-region in photonic crystal waveguides is investigated theoretically and experimentally. The study shows that the slow-light excitation provides over 50 nm bandwidth for TE-polarized light splitting between two output ports, and co-exists together with self-imaging leading to ~20 nm extra bandwidth. The intensity of the direct excitation is qualitatively explained by the overlap integral of the magnetic fields between the ground input- and excited output-modes. The direct excitation of slow light is practically lossless compared with transmission in a W1 photonic crystal waveguides, which broadens the application-field for slow-light and further minimizes the size of a 1x2 splitter. © 2011 Optical Society of America

A photonic crystal waveguide with silicon on insulator in the near-infrared band

NASA Astrophysics Data System (ADS)

Tang, Hai-Xia; Zuo, Yu-Hua; Yu, Jin-Zhong; Wang, Qi-Ming

2007-07-01

A two-dimensional (2D) photonic crystal waveguide in the Γ-K direction with triangular lattice on a silicon-on-insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.

Multi/demulti-plexer based on transverse mode conversion in photonic crystal waveguides.

PubMed

Zhou, Wen; Zhuang, Yuyang; Ji, Ke; Chen, He-ming

2015-09-21

A novel mode multiplexer and demultiplexer (MMUX/DEMMUX) based on 2-D photonic crystal (PC) at 1550 nm is proposed. The PC-based mode MMUX/DEMMUX including mode conversion function with a single-mode and multi-mode waveguides can be realized by quasi phase-matching TE(0) & TE(1) modes of two waveguides. 2DFinite-Difference-Time-Domain and beam propagation methods are used for simulation. The results show that PC-based mode MMUX/DEMMUX has the potential for high-capacity MDM optical communication systems with a low insertion loss (<0.36dB), low mode crosstalk (< -20.9 dB) and wide bandwidth (~100 nm).

Optical NOR logic gate design on square lattice photonic crystal platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

D’souza, Nirmala Maria, E-mail: nirmala@cukerala.ac.in; Mathew, Vincent, E-mail: vincent@cukerala.ac.in

We numerically demonstrate a new configuration of all-optical NOR logic gate with square lattice photonic crystal (PhC) waveguide using finite difference time domain (FDTD) method. The logic operations are based on interference effect of optical waves. We have determined the operating frequency range by calculating the band structure for a perfectly periodic PhC using plane wave expansion (PWE) method. Response time of this logic gate is 1.98 ps and it can be operated with speed about 513 GB/s. The proposed device consists of four linear waveguides and a square ring resonator waveguides on PhC platform.

Interfacial magnetic coupling in hetero-structure of Fe/double-perovskite NdBaMn2O6 single crystal

NASA Astrophysics Data System (ADS)

Lin, W. C.; Tsai, C. L.; Ogawa, K.; Yamada, S.; Gandhi, Ashish C.; Lin, J. G.

2018-04-01

The interfacial magnetic coupling between metallic Fe and the double-perovskite NdBaMn2O6 single crystal was investigated in the heterostructure of 4-nm Pd/10-nm Fe/NdBaMn2O6. A considerable magnetic coupling effect was observed in the temperature range coincident with the magnetic phase transition of NdBaMn2O6. When the temperature was elevated above 270 K, NdBaMn2O6 transformed from a state of antiferromagnetic fluctuating domains to a superparamagnetism-like (ferromagnetic fluctuation) state with high magnetic susceptibility. Concurrently, the interfacial magnetic coupling between the Fe layer and the NdBaMn2O6 crystal was observed, as indicated by the considerable squareness reduction and coercivity enhancement in the Fe layer. Moreover, the presence of the Fe layer changed the magnetic structure of NdBaMn2O6 from conventional 4-fold symmetry to 2-fold symmetry. These observations offer applicable insights into the mutual magnetic interaction in the heterostructures of metallic ferromagnetism/perovskite materials.

Growth and nonlinear optical characterization of organic single crystal films

NASA Astrophysics Data System (ADS)

Zhou, Ligui

1997-12-01

Organic single crystal films are important for various future applications in photonics and integrated optics. The conventional method for inorganic crystal growth is not suitable for organic materials, and the high temperature melting method is not good for most organic materials due to decomposition problems. We developed a new method-modified shear method-to grow large area organic single crystal thin films which have exceptional nonlinear optical properties and high quality surfaces. Several organic materials (NPP, PNP and DAST) were synthesized and purified before the thin film crystal growth. Organic single crystal thin films were grown from saturated organic solutions using modified shear method. The area of single crystal films were about 1.5 cm2 for PNP, 1 cm2 for NPP and 5 mm2 for DAST. The thickness of the thin films which could be controlled by the applied pressure ranged from 1μm to 10 μm. The single crystal thin films of organic materials were characterized by polarized microscopy, x-ray diffraction, polarized UV-Visible and polarized micro-FTIR spectroscopy. Polarized microscopy showed uniform birefringence and complete extinction with the rotation of the single crystal thin films under crossed- polarization, which indicated high quality single crystals with no scattering. The surface orientation of single crystal thin films was characterized by x-ray diffraction. The molecular orientation within the crystal was further studied by the polarized UV-Visible and Polarized micro-FTIR techniques combined with the x-ray and polarized microscopy results. A Nd:YAG laser with 35 picosecond pulses at 1064nm wavelength was employed to perform the nonlinear optical characterization of the organic single crystal thin films. Two measurement techniques were used to study the crystal films: second harmonic generation (SHG) and electro-optic (EO) effect. SHG results showed that the nonlinear optical coefficient of NPP was 18 times that of LiNbO3, a standard inorganic crystal material, and the nonlinear optical coefficient of PNP was 11 times that of LiNbO3. Electro-optic measurements showed that r11 = 65 pm/V for NPP and r12 = 350 pm/V for DAST. EO modulation effect was also observed using Fabry-Perot interferometry. Waveguide devices are very important for integrated optics. But the fabrication of waveguide devices on the organic single crystal thin films was difficult due to the solubility of the film in common organic solvents. A modified photolithographic technique was employed to make channel waveguides and poly(vinyl alcohol) (PVA) was used as a protective layer in the fabrication of the waveguides. Waveguides with dimensions about 7/mum x 1μm x 1mm were obtained.

Lasing in a nematic liquid crystal cell with an interdigitated electrode system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shtykov, N M; Palto, S P; Umanskii, B A

2015-04-30

Waveguide lasing in a layer of a dye-doped nematic liquid crystal has been observed. The liquid-crystal layer was sandwiched between a quartz substrate and a glass cover plate on whose surface was deposited an interdigitated electrode system. This system had a period of 3.75 μm and played a dual role, namely, it created a spatial periodicity of the waveguide medium refractive index (thus creating distributed feedback) and served as a diffraction grating coupling out a part of waveguide radiation into the glass cover plate. The distributed feedback ensured lasing in the 18th diffraction order for the TE modes and inmore » the 19th order for the TM modes of the waveguide. The generated radiation was observed at the exit from the glass plate end face at the angles to the waveguide plane of 33.1 ± 1.5° for TM modes and 21.8 ± 1.8° for TE modes. The intensity and position of the TE emission line showed no regular dependence on the voltage on the electrodes. In the case of TM radiation, an increase in the voltage led to a short-wavelength shift of the laser line and to a decrease in its intensity. (lasers)« less

Photonic crystal waveguide-based biosensor for detection of diseases

NASA Astrophysics Data System (ADS)

Chopra, Harshita; Kaler, Rajinder S.; Painam, Balveer

2016-07-01

A biosensor is a device that is used to detect the analytes or molecules of a sample by means of a binding mechanism. A two-dimensional photonic crystal waveguide-based biosensor is designed with a diamond-shaped ring resonator and two waveguides: a bus waveguide and a drop waveguide. The sensing mechanism is based on change in refractive index of the analytes, leading to a shift in the peak resonant wavelength. This mechanism can be used in the field of biomedical treatment where different body fluids such as blood, tears, saliva, or urine can be used as the analyte in which different components of the fluid can be detected. It can also be used to differentiate between the cell lines of a normal and an unhealthy human being. Average value of quality factor for this device comes out to be 1082.2063. For different analytes used, the device exhibits enhanced sensitivity and, hence, it is useful for the detection of diseases.

Femtosecond-laser-written Tm:KLu(WO₄)₂ waveguide lasers.

PubMed

Kifle, Esrom; Mateos, Xavier; de Aldana, Javier Rodríguez Vázquez; Ródenas, Airan; Loiko, Pavel; Choi, Sun Yung; Rotermund, Fabian; Griebner, Uwe; Petrov, Valentin; Aguiló, Magdalena; Díaz, Francesc

2017-03-15

Depressed-index channel waveguides with a circular and photonic crystal cladding structures are prepared in a bulk monoclinic Tm:KLu(WO₄)₂ crystal by 3D direct femtosecond laser writing. The channel waveguide structures are characterized and laser operation is achieved using external mirrors. In the continuous-wave mode, the maximum output power of 46 mW is achieved at 1912 nm corresponding to a slope efficiency of 15.2% and a laser threshold of only 21 mW. Passive Q-switching of a waveguide with a circular cladding is realized using single-walled carbon nanotubes. Stable 7 nJ/50 ns pulses are achieved at a repetition rate of 1.48 MHz. This first demonstration of ∼2  μm fs-laser-written waveguide lasers based on monoclinic double tungstates is promising for further lasers of this type doped with Tm³⁺ and Ho³⁺  ions.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures.

PubMed

Cai, Zhengyang; Liu, Bilu; Zou, Xiaolong; Cheng, Hui-Ming

2018-01-31

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

PubMed Central

Chakravarty, Swapnajit; Yang, Chun-Ju; Wang, Zheng; Tang, Naimei; Fan, Donglei; Chen, Ray T.

2015-01-01

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed. PMID:25829549

Ridge waveguides in Nd:ABC3O7 disordered crystals produced by swift C5+ ion irradiation and precise diamond dicing: Broad band guidance and spectroscopic properties

NASA Astrophysics Data System (ADS)

Chen, Chen; Luan, Qingfang; He, Ruiyun; Cheng, Chen; Akhmadaliev, Shavkat; Zhou, Shengqiang; Yu, Haohai; Zhang, Huaijin; Chen, Feng

2015-05-01

Optical ridge waveguides have been manufactured in the crystals of Nd:SrLaGa3O7 and Nd:SrGdGa3O7 by combining techniques of swift carbon ion irradiation with precise diamond blade dicing. The guiding properties of the waveguides are investigated at broadband (at wavelength of 633 nm, 1064 nm, and 4 μm). After annealing treatment at 200 °C for 1 h, the propagation losses of ridge waveguides could be reduced to as low as 1 dB/cm. The confocal microfluorescence emission spectra confirm that the fluorescence properties of Nd3+ ions are almost unchanged after the ion irradiation processing, showing promising potentials as application of miniature light sources in integrated optics.

Forward and backward THz-wave difference frequency generations from a rectangular nonlinear waveguide.

PubMed

Huang, Yen-Chieh; Wang, Tsong-Dong; Lin, Yen-Hou; Lee, Ching-Han; Chuang, Ming-Yun; Lin, Yen-Yin; Lin, Fan-Yi

2011-11-21

We report forward and backward THz-wave difference frequency generations at 197 and 469 μm from a PPLN rectangular crystal rod with an aperture of 0.5 (height in z) × 0.6 (width in y) mm(2) and a length of 25 mm in x. The crystal rod appears as a waveguide for the THz waves but as a bulk material for the optical mixing waves near 1.54 μm. We measured enhancement factors of 1.6 and 1.8 for the forward and backward THz-wave output powers, respectively, from the rectangular waveguide in comparison with those from a PPLN slab waveguide of the same length, thickness, and domain period under the same pump and signal intensity of 100 MW/cm(2). © 2011 Optical Society of America

Fabrication of triangular nanobeam waveguide networks in bulk diamond using single-crystal silicon hard masks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayn, I.; Mouradian, S.; Li, L.

2014-11-24

A scalable approach for integrated photonic networks in single-crystal diamond using triangular etching of bulk samples is presented. We describe designs of high quality factor (Q = 2.51 × 10{sup 6}) photonic crystal cavities with low mode volume (V{sub m} = 1.062 × (λ/n){sup 3}), which are connected via waveguides supported by suspension structures with predicted transmission loss of only 0.05 dB. We demonstrate the fabrication of these structures using transferred single-crystal silicon hard masks and angular dry etching, yielding photonic crystal cavities in the visible spectrum with measured quality factors in excess of Q = 3 × 10{sup 3}.

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

NASA Astrophysics Data System (ADS)

Yan, Xiaodong; Esqueda, Ivan S.; Ma, Jiahui; Tice, Jesse; Wang, Han

2018-01-01

In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques.

PubMed

Xu, Tao; Dick, Kimberly A; Plissard, Sébastien; Nguyen, Thanh Hai; Makoudi, Younes; Berthe, Maxime; Nys, Jean-Philippe; Wallart, Xavier; Grandidier, Bruno; Caroff, Philippe

2012-03-09

III-V antimonide nanowires are among the most interesting semiconductors for transport physics, nanoelectronics and long-wavelength optoelectronic devices due to their optimal material properties. In order to investigate their complex crystal structure evolution, faceting and composition, we report a combined scanning electron microscopy (SEM), transmission electron microscopy (TEM), and scanning tunneling microscopy (STM) study of gold-nucleated ternary InAs/InAs(1-x)Sb(x) nanowire heterostructures grown by molecular beam epitaxy. SEM showed the general morphology and faceting, TEM revealed the internal crystal structure and ternary compositions, while STM was successfully applied to characterize the oxide-free nanowire sidewalls, in terms of nanofaceting morphology, atomic structure and surface composition. The complementary use of these techniques allows for correlation of the morphological and structural properties of the nanowires with the amount of Sb incorporated during growth. The addition of even a minute amount of Sb to InAs changes the crystal structure from perfect wurtzite to perfect zinc blende, via intermediate stacking fault and pseudo-periodic twinning regimes. Moreover, the addition of Sb during the axial growth of InAs/InAs(1-x)Sb(x) heterostructure nanowires causes a significant conformal lateral overgrowth on both segments, leading to the spontaneous formation of a core-shell structure, with an Sb-rich shell.

Epitaxial cuprate superconductor/ferroelectric heterostructures.

PubMed

Ramesh, R; Inam, A; Chan, W K; Wilkens, B; Myers, K; Remschnig, K; Hart, D L; Tarascon, J M

1991-05-17

Thin-film heterostructures of Bi(4)Ti(3)O(12)Bi(2)Sr(2)CuO(6+x), have been grown on single crystals of SrTiO(3), LaAlO(3), and MgAl(2)O(4) by pulsed laser deposition. X-ray diffraction studies show the presence of c-axis orientation only; Rutherford backscattering experiments show the composition to be close to the nominal stoichiometry. The films are ferroelectric and exhibit a symmetric hysteresis loop. The remanent polarization was 1.0 microcoulomb per square centimeter, and the coercive field was 2.0 x 10(5) volts per centimeter. Similar results were obtained with YBa(2)Cu(3)O(7-x) and Bi(2)Sr(2)CaCu(2)O(8+x), and single-crystal Bi(2)Sr(2)CuO(6+x)as the bottom electrodes. These films look promising for use as novel, lattice-matched, epitaxial ferroelectric film/electrode heterostructures in nonvolatile memory applications.

Ti:Sapphire micro-structures by femtosecond laser inscription: Guiding and luminescence properties

NASA Astrophysics Data System (ADS)

Ren, Yingying; Jiao, Yang; Vázquez de Aldana, Javier R.; Chen, Feng

2016-08-01

We report on the fabrication of buried cladding waveguides with different diameters in a Ti:Sapphire crystal by femtosecond laser inscription. The propagation properties are studied, showing that the cladding waveguides could support near- to mid-infrared waveguiding at both TE and TM polarizations. Confocal micro-photoluminescence experiments reveal that the original fluorescence properties in the waveguide region are very well preserved, while it suffers from a strong quenching at the centers of laser induced filaments. Broadband waveguide fluorescence emissions with high efficiency are realized, indicating the application of the cladding waveguides in Ti:Sapphire as compact broadband luminescence sources in biomedical fields.

EDITORIAL: Photonic Crystal Devices

NASA Astrophysics Data System (ADS)

Bhattacharya, Pallab K.

2007-05-01

The engineering of electromagnetic modes at optical frequencies in artificial dielectric structures with periodic and random variation of the refractive index, enabling control of the radiative properties of the materials and photon localization, was first proposed independently by Yablonovitch and John in 1987. It is possible to control the flow of light in the periodic dielectric structures, known as photonic crystals (PC). As light waves scatter within the photonic crystal, destructive interference cancels out light of certain wavelengths, thereby forming a photonic bandgap, similar to the energy bandgap for electron waves in a semiconductor. Photons whose energies lie within the gap cannot propagate through the periodic structure. This property can be used to make a low-loss cavity. If a point defect, such as one or more missing periods, is introduced into the periodic structure a region is obtained within which the otherwise forbidden wavelengths can be locally trapped. This property can be used to realize photonic microcavities. Similarly, a line of defects can serve as a waveguide. While the realization of three-dimensional (3D) photonic crystals received considerable attention initially, planar two-dimensional (2D) structures are currently favoured because of their relative ease of fabrication. 2D photonic crystal structures provide most of the functionality of 3D structures. These attributes have generated worldwide research and development of sub-μm and μm size active and passive photonic devices such as single-mode and non- classical light sources, guided wave devices, resonant cavity detection, and components for optical communication. More recently, photonic crystal guided wave devices are being investigated for application in microfludic and biochemical sensing. Photonic crystal devices have been realized with bulk, quantum well and quantum dot active regions. The Cluster of articles in this issue of Journal of Physics D: Applied Physics provides a glimpse of some of the most recent advances in the application of photonic crystals. The modelling of PC defect-mode cavities are described by Zhou et al. Ye and co-authors describe the concept and realization of a novel 3D silicon-based spiral PC. It is, in fact, the only article on 3D PCs. The design and realization of ultra-high Q heterostructure PC nanocavities are described by Song and co-authors. The concept of self-collimation of light in PCs and its applications are presented by Prather and co-workers. Experimental and numerical studies on the negative refraction related phenomenon in 2D PCs are the subject of the next article by Ozbay and co-authors. The emerging subject of slow light generation, control and propagation in PCs is presented in the next two articles by Baba and Mori and by Krauss. Finally, the progress made in the development of PC microcavity lasers and electrically injected microcavity light emitters and arrays is described, respectively, by O'Brien et al and by Chakravarty et al. It is hoped that readers will get a sense of the exciting developments and the possibilities presented by heterostructure photonic crystals and their devices from reading the articles in this Cluster.

Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trunkin, I. N.; Presniakov, M. Yu.; Vasiliev, A. L., E-mail: a.vasiliev56@gmail.com

Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.

Slow light enhanced optical nonlinearity in a silicon photonic crystal coupled-resonator optical waveguide.

PubMed

Matsuda, Nobuyuki; Kato, Takumi; Harada, Ken-Ichi; Takesue, Hiroki; Kuramochi, Eiichi; Taniyama, Hideaki; Notomi, Masaya

2011-10-10

We demonstrate highly enhanced optical nonlinearity in a coupled-resonator optical waveguide (CROW) in a four-wave mixing experiment. Using a CROW consisting of 200 coupled resonators based on width-modulated photonic crystal nanocavities in a line defect, we obtained an effective nonlinear constant exceeding 10,000 /W/m, thanks to slow light propagation combined with a strong spatial confinement of light achieved by the wavelength-sized cavities.

Transfer of micro and nano-photonic silicon nanomembrane waveguide devices on flexible substrates.

PubMed

Ghaffari, Afshin; Hosseini, Amir; Xu, Xiaochuan; Kwong, David; Subbaraman, Harish; Chen, Ray T

2010-09-13

This paper demonstrates transfer of optical devices without extra un-patterned silicon onto low-cost, flexible plastic substrates using single-crystal silicon nanomembranes. Employing this transfer technique, stacking two layers of silicon nanomembranes with photonic crystal waveguide in the first layer and multi mode interference couplers in the second layer is shown, respectively. This technique is promising to realize high density integration of multilayer hybrid structures on flexible substrates.

Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces.

PubMed

Corfdir, Pierre; Li, Hong; Marquardt, Oliver; Gao, Guanhui; Molas, Maciej R; Zettler, Johannes K; van Treeck, David; Flissikowski, Timur; Potemski, Marek; Draxl, Claudia; Trampert, Achim; Fernández-Garrido, Sergio; Grahn, Holger T; Brandt, Oliver

2018-01-10

In semiconductor quantum-wire heterostructures, interface roughness leads to exciton localization and to a radiative decay rate much smaller than that expected for structures with flat interfaces. Here, we uncover the electronic and optical properties of the one-dimensional extended defects that form at the intersection between stacking faults and inversion domain boundaries in GaN nanowires. We show that they act as crystal-phase quantum wires, a novel one-dimensional quantum system with atomically flat interfaces. These quantum wires efficiently capture excitons whose radiative decay gives rise to an optical doublet at 3.36 eV at 4.2 K. The binding energy of excitons confined in crystal-phase quantum wires is measured to be more than twice larger than that of the bulk. As a result of their unprecedented interface quality, these crystal-phase quantum wires constitute a model system for the study of one-dimensional excitons.

Acousto-optical interaction of surface acoustic and optical waves in a two-dimensional phoxonic crystal hetero-structure cavity.

PubMed

Ma, Tian-Xue; Zou, Kui; Wang, Yue-Sheng; Zhang, Chuanzeng; Su, Xiao-Xing

2014-11-17

Phoxonic crystal is a promising material for manipulating sound and light simultaneously. In this paper, we theoretically demonstrate the propagation of acoustic and optical waves along the truncated surface of a two-dimensional square-latticed phoxonic crystal. Further, a phoxonic crystal hetero-structure cavity is proposed, which can simultaneously confine surface acoustic and optical waves. The interface motion and photoelastic effects are taken into account in the acousto-optical coupling. The results show obvious shifts in eigenfrequencies of the photonic cavity modes induced by different phononic cavity modes. The symmetry of the phononic cavity modes plays a more important role in the single-phonon exchange process than in the case of the multi-phonon exchange. Under the same deformation, the frequency shift of the photonic transverse electric mode is larger than that of the transverse magnetic mode.

Transport properties of high quality heterostructures from unstable 2D crystals prepared in inert atmosphere

NASA Astrophysics Data System (ADS)

Yu, Geliang; Yang, Cao; Khestanova, Ekaterina; Mishchenko, Artem; Kretinin, Andy; Gorbachev, Roman; Novoselov, Konstantin; Andre, Geim; Manchester Group Team

Many layered materials can be cleaved down to individual atomic planes, similar to graphene, but only a small minority of them are stable under ambient conditions. The rest reacts and decomposes in air, which has severely hindered their investigation and possible uses. Here we introduce a remedial approach based on cleavage, transfer, alignment and encapsulation of airsensitive crystals, all inside a controlled inert atmosphere. To illustrate the technology, we choose two archetypal two-dimensional crystals unstable in air: black phosphorus and niobium diselenide. Our field-effect devices made from their monolayers are conductive and fully stable under ambient conditions, in contrast to the counterparts processed in air. NbSe2 remains superconducting down to the monolayer thickness. Starting with a trilayer, phosphorene devices reach sufficiently high mobilities to exhibit Landau quantization. The approach offers a venue to significantly expand the range of experimentally accessible two-dimensional crystals and their heterostructures.

Observation of extraordinary optical activity in planar chiral photonic crystals.

PubMed

Konishi, Kuniaki; Bai, Benfeng; Meng, Xiangfeng; Karvinen, Petri; Turunen, Jari; Svirko, Yuri P; Kuwata-Gonokami, Makoto

2008-05-12

Control of light polarization is a key technology in modern photonics including application to optical manipulation of quantum information. The requisite is to obtain large rotation in isotropic media with small loss. We report on extraordinary optical activity in a planar dielectric on-waveguide photonic crystal structure, which has no in-plane birefringence and shows polarization rotation of more than 25 degrees for transmitted light. We demonstrate that in the planar chiral photonic crystal, the coupling of the normally incident light wave with low-loss waveguide and Fabry-Pérot resonance modes results in a dramatic enhancement of the optical activity.

Er3+-doped BaY2F8 crystal waveguides for broadband optical amplification at 1.5 μm

NASA Astrophysics Data System (ADS)

Toccafondo, V.; Cerqueira S., A.; Faralli, S.; Sani, E.; Toncelli, A.; Tonelli, M.; Di Pasquale, F.

2007-01-01

Integrated waveguide amplifiers based on high concentration Er3+ doped BaY2F8 crystals are numerically studied by combining a full-vectorial finite element based modal analysis and propagation-rate equations. Using realistic input data, such as the absorption/emission cross sections and Er level lifetimes measured on grown crystal samples, we investigate the amplifier performance by optimizing the total Er concentration. We predict optimum gain coefficient up to 5dB/cm and broad amplification bandwidth exceeding 80nm with 1480nm pumping.

Coupling of small, low-loss hexapole mode with photonic crystal slab waveguide mode.

PubMed

Kim, Guk-Hyun; Lee, Yong-Hee; Shinya, Akihiko; Notomi, Masaya

2004-12-27

Coupling characteristics between the single-cell hexapole mode and the triangular-lattice photonic crystal slab waveguide mode is studied by the finite-difference time-domain method. The single-cell hexapole mode has a high quality factor (Q) of 3.3Chi106 and a small modal volume of 1.18(lambda/n)3. Based on the symmetry, three representative types of coupling geometries (shoulder-couple, butt-couple and side-couple structures) are selected and tested. The coupling efficiency shows strong dependence on the transverse overlap of the cavity mode and the waveguide mode over the region of the waveguide. The shoulder-couple structure shows best coupling characteristics among three tested structures. For example, two shouldercouple waveguides and a hexapole cavity result in a high performance resonant-tunneling-filter with Q of 9.7Chi105 and transmittance of 0.48. In the side-couple structure, the coupling strength is much weaker than that of the shoulder-couple structure because of the poor spatial overlap between the mode profiles. In the direct-couple structure, the energy transfer from the cavity to the waveguide is prohibited because of the symmetry mismatch and no coupling is observed.

Buffering capability and limitations in low dispersion photonic crystal waveguides with elliptical airholes.

PubMed

Long, Fang; Tian, Huiping; Ji, Yuefeng

2010-09-01

A low dispersion photonic crystal waveguide with triangular lattice elliptical airholes is proposed for compact, high-performance optical buffering applications. In the proposed structure, we obtain a negligible-dispersion bandwidth with constant group velocity ranging from c/41 to c/256, by optimizing the major and minor axes of bulk elliptical holes and adjusting the position and the hole size of the first row adjacent to the defect. In addition, the limitations of buffer performance in a dispersion engineering waveguide are well studied. The maximum buffer capacity and the maximum data rate can reach as high as 262bits and 515 Gbits/s, respectively. The corresponding delay time is about 255.4ps.

Fabrication of a Quartz-Crystal-Microbalance/Optical-Waveguide Hybrid Sensor and In situ Evaluation of Vacuum-Evaporated Lead Phthalocyanine Thin Film

NASA Astrophysics Data System (ADS)

Shinbo, Kazunari; Uno, Akihiro; Hirakawa, Ryo; Baba, Akira; Ohdaira, Yasuo; Kato, Keizo; Kaneko, Futao

2013-05-01

In this study, we fabricated a novel quartz-crystal-microbalance (QCM)/optical-waveguide hybrid sensor. An in situ observation of a lead phthalocyanine (PbPc) thin-film deposition was conducted during vacuum evaporation, and the effectiveness of the sensor was demonstrated. The film thickness was obtained from the QCM frequency, and the optical absorption of the film was observed by optical waveguide spectroscopy using part of the QCM substrate without the electrode. The film absorption depends on the polarization direction, substrate temperature and deposition rate, owing to aggregate formation. The thickness dependence of the absorption property was also investigated.

High frequency GaAlAs modulator and photodetector for phased array antenna applications

NASA Technical Reports Server (NTRS)

Claspy, P. C.; Chorey, C. M.; Hill, S. M.; Bhasin, K. B.

1988-01-01

A waveguide Mach-Zehnder electro-optic modulator and an interdigitated photoconductive detector designed to operate at 820 nm, fabricated on different GaAlAs/GaAs heterostructure materials, are being investigated for use in optical interconnects in phased array antenna systems. Measured optical attenuation effects in the modulator are discussed and the observed modulation performance up to 1 GHz is presented. Measurements of detector frequency response are described and results presented.

Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju

A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experimentmore » showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.« less

Efficient laser emission from cladding waveguide inscribed in Nd:GdVO(4) crystal by direct femtosecond laser writing.

PubMed

Liu, Hongliang; Tan, Yang; Vázquez de Aldana, Javier R; Chen, Feng

2014-08-01

We report on the fabrication of depressed cladding waveguides in Nd:GdVO(4) laser crystal by using femtosecond laser inscription. The cross section of the structure is a circular shape with a diameter of 150 μm. Under the optical pump at 808 nm, the continuous wave (cw) as well as pulsed (Q-switched by graphene saturable absorber) waveguide lasing at 1064 nm has been realized, supporting guidance of both TE and TM polarizations. The maximum output power of 0.57 W was obtained in the cw regime, while the maximum pulse energy of the pulsed laser emissions was up to 19 nJ (corresponding to a maximum average output power of 0.33 W, at a resonant frequency of 18 MHz). The slope efficiencies achieved for the cw and pulsed Nd:GdVO(4) waveguide lasers were as high as 68% and 52%, respectively.

Polarized micro-Raman studies of femtosecond laser written stress-induced optical waveguides in diamond

NASA Astrophysics Data System (ADS)

Sotillo, B.; Chiappini, A.; Bharadwaj, V.; Hadden, J. P.; Bosia, F.; Olivero, P.; Ferrari, M.; Ramponi, R.; Barclay, P. E.; Eaton, S. M.

2018-01-01

Understanding the physical mechanisms of the refractive index modulation induced by femtosecond laser writing is crucial for tailoring the properties of the resulting optical waveguides. In this work, we apply polarized Raman spectroscopy to study the origin of stress-induced waveguides in diamond, produced by femtosecond laser writing. The change in the refractive index induced by the femtosecond laser in the crystal is derived from the measured stress in the waveguides. The results help to explain the waveguide polarization sensitive guiding mechanism, as well as provide a technique for their optimization.

Manipulating femtosecond pulse shape using liquid crystals infiltrated one-dimensional graded index photonic crystal waveguides composed of coupled-cavities

NASA Astrophysics Data System (ADS)

Fathollahi Khalkhali, T.; Bananej, A.

2017-10-01

In this paper, we investigate the transmission of a 10-femtosecond pulse through an ordinary and graded index coupled-cavity waveguide, using finite-difference time-domain and transfer matrix method. The ordinary structure is composed of dielectric/liquid crystal layers in which four defect layers are placed symmetrically. Next, we introduce a graded structure based on the ordinary system in which dielectric refractive index slightly increases with a constant step value from the beginning to the end of the structure while liquid crystal layers are maintained unchanged. Simulation results reveal that by applying an external static electric field and controlling liquid crystal refractive index in graded structure, it is possible to transmit an ultrashort pulse with negligible distortion and attenuation.

Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking

NASA Astrophysics Data System (ADS)

Isa, F.; Salvalaglio, M.; Arroyo Rojas Dasilva, Y.; Jung, A.; Isella, G.; Erni, R.; Timotijevic, B.; Niedermann, P.; Gröning, P.; Montalenti, F.; von Känel, H.

2016-10-01

We demonstrate that the elastic stress relaxation mechanism in micrometre-sized, highly mismatched heterostructures may be enhanced by employing patterned substrates in the form of necked pillars, resulting in a significant reduction of the dislocation density. Compositionally graded Si1-xGex crystals were grown by low energy plasma enhanced chemical vapour deposition, resulting in tens of micrometres tall, three-dimensional heterostructures. The patterned Si(001) substrates consist of micrometre-sized Si pillars either with the vertical {110} or isotropically under-etched sidewalls resulting in narrow necks. The structural properties of these heterostructures were investigated by defect etching and transmission electron microscopy. We show that the dislocation density, and hence the competition between elastic and plastic stress relaxation, is highly influenced by the shape of the substrate necks and their proximity to the mismatched epitaxial material. The SiGe dislocation density increases monotonically with the crystal width but is significantly reduced by the substrate under-etching. The drop in dislocation density is interpreted as a direct effect of the enhanced compliance of the under-etched Si pillars, as confirmed by the three-dimensional finite element method simulations of the elastic energy distribution.

Modeling and Optimization of Optical Half Adder in Two Dimensional Photonic Crystals

NASA Astrophysics Data System (ADS)

Sonth, Mahesh V.; Soma, Savita; Gowre, Sanjaykumar C.; Biradar, Nagashettappa

2018-05-01

The output of photonic integrated devices is enhanced using crystal waveguides and cavities but optimization of these devices is a topic of research. In this paper, optimization of the optical half adder in two-dimensional (2-D) linear photonic crystals using four symmetric T-shaped waveguides with 180° phase shift inputs is proposed. The input section of a T-waveguide acts as a beam splitter, and the output section acts as a power combiner. The constructive and destructive interference phenomenon will provide an output optical power. Output port Cout will receive in-phase power through the 180° phase shifter cavity designed near the junction. The optical half adder is modeled in a 2-D photonic crystal using the finite difference time domain method (FDTD). It consists of a cubic lattice with an array of 39 × 43 silicon rods of radius r 0.12 μm and 0.6 μm lattice constant a. The extinction ratio r e of 11.67 dB and 12.51 dB are achieved at output ports using the RSoft FullWAVE-6.1 software package.

Efficient fiber-coupled single-photon source based on quantum dots in a photonic-crystal waveguide

PubMed Central

DAVEAU, RAPHAËL S.; BALRAM, KRISHNA C.; PREGNOLATO, TOMMASO; LIU, JIN; LEE, EUN H.; SONG, JIN D.; VERMA, VARUN; MIRIN, RICHARD; NAM, SAE WOO; MIDOLO, LEONARDO; STOBBE, SØREN; SRINIVASAN, KARTIK; LODAHL, PETER

2017-01-01

Many photonic quantum information processing applications would benefit from a high brightness, fiber-coupled source of triggered single photons. Here, we present a fiber-coupled photonic-crystal waveguide single-photon source relying on evanescent coupling of the light field from a tapered out-coupler to an optical fiber. A two-step approach is taken where the performance of the tapered out-coupler is recorded first on an independent device containing an on-chip reflector. Reflection measurements establish that the chip-to-fiber coupling efficiency exceeds 80 %. The detailed characterization of a high-efficiency photonic-crystal waveguide extended with a tapered out-coupling section is then performed. The corresponding overall single-photon source efficiency is 10.9 % ± 2.3 %, which quantifies the success probability to prepare an exciton in the quantum dot, couple it out as a photon in the waveguide, and subsequently transfer it to the fiber. The applied out-coupling method is robust, stable over time, and broadband over several tens of nanometers, which makes it a highly promising pathway to increase the efficiency and reliability of planar chip-based single-photon sources. PMID:28584859

Low index contrast heterostructure photonic crystal cavities with high quality factors and vertical radiation coupling

NASA Astrophysics Data System (ADS)

Ge, Xiaochen; Minkov, Momchil; Fan, Shanhui; Li, Xiuling; Zhou, Weidong

2018-04-01

We report here design and experimental demonstration of heterostructure photonic crystal cavities resonating near the Γ point with simultaneous strong lateral confinement and highly directional vertical radiation patterns. The lateral confinement is provided by a mode gap originating from a gradual modulation of the hole radii. High quality factor resonance is realized with a low index contrast between silicon nitride and quartz. The near surface-normal directional emission is preserved when the size of the core region is scaled down. The influence of the cavity size parameters on the resonant modes is also investigated theoretically and experimentally.

Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy.

PubMed

Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D

2017-05-01

The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. Copyright © 2016 Elsevier B.V. All rights reserved.

Time domain topology optimization of 3D nanophotonic devices

NASA Astrophysics Data System (ADS)

Elesin, Y.; Lazarov, B. S.; Jensen, J. S.; Sigmund, O.

2014-02-01

We present an efficient parallel topology optimization framework for design of large scale 3D nanophotonic devices. The code shows excellent scalability and is demonstrated for optimization of broadband frequency splitter, waveguide intersection, photonic crystal-based waveguide and nanowire-based waveguide. The obtained results are compared to simplified 2D studies and we demonstrate that 3D topology optimization may lead to significant performance improvements.

Femtosecond writing of near-surface waveguides in lithium niobate for low-loss electro-optical modulators of broadband emission

NASA Astrophysics Data System (ADS)

Bukharin, Mikhail A.; Skryabin, Nikolay N.; Khudyakov, Dmitriy V.; Vartapetov, Sergey K.

2016-05-01

In the investigation we demonstrated technique of direct femtosecond laser writing of tracks with induced refractive index at record low depth under surface of lithium niobate (3-15 μm). It was shown that with the help of proposed technique one can be written claddings of near surface optical waveguides that plays a key role in fabrication of fast electro-optical modulators with low operating voltage. Fundamental problem resolved in the investigation consists in suppression of negative factors impeding femtosecond inscription of waveguides at low depths. To prevent optical breakdown of crystal surface we used high numerical aperture objectives for focusing of light. It was shown, that advanced heat accumulation regime of femtosecond inscription is inapplicable for writing of near-surface waveguides, and near the surface waveguides should be written in non-thermal regime in contrast to widespread femtosecond writing at depths of tens micrometers. Inscribed waveguides were examined for optical losses and polarization properties. It was experimentally shown, that femtosecond written near surface waveguides have such advantages over widely used proton exchanged and Ti-diffusion waveguides as lower optical losses (down to 0.3 dB/cm) and maintaining of all polarization states of propagation light, which is crucial for development of electro-optical modulators for broadband and ultrashort laser emission. Novelty of the results consists in technique of femtosecond inscription of waveguides at record low depths under the surface of crystals. As compared to previous investigations in the field (structures at depths near 50 um with buried electrodes), the obtained waveguides could be used with simple closely adjacent on-surface electrodes.

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

NASA Astrophysics Data System (ADS)

Xiang, Li; Degang, Zhao; Desheng, Jiang; Ping, Chen; Zongshun, Liu; Jianjun, Zhu; Ming, Shi; Danmei, Zhao; Wei, Liu

2016-01-01

Electron leakage in GaAs-based separately confined heterostructure 808 nm laser diodes (SCH LDs) has a serious influence on device performance. Here, in order to reduce the energy of electrons injected into the quantum well (QW), an AlGaAs interlayer with a smaller Al component is added between the active region and the n-side waveguide. Numerical device simulation reveals that when the Al-composition of the AlGaAs interlayer and its thickness are properly elected, the electron leakage is remarkably depressed and the characteristics of LDs are improved, owing to the reduction of injected electron energy and the improvement of QW capture efficiency. Project supported by the National Natural Science Foundation of China (Nos. 61377020, 61376089, 61223005, 61176126) and the National Science Fund for Distinguished Young Scholars (No. 60925017).

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

NASA Astrophysics Data System (ADS)

Hartmann, Jana; Steib, Frederik; Zhou, Hao; Ledig, Johannes; Nicolai, Lars; Fündling, Sönke; Schimpke, Tilman; Avramescu, Adrian; Varghese, Tansen; Trampert, Achim; Straßburg, Martin; Lugauer, Hans-Jürgen; Wehmann, Hergo-Heinrich; Waag, Andreas

2017-10-01

GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {1 1 -2 0} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2-temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2-temperature-step-grown fin LED are demonstrated.

Wavelength-scale photonic-crystal laser formed by electron-beam-induced nano-block deposition.

PubMed

Seo, Min-Kyo; Kang, Ju-Hyung; Kim, Myung-Ki; Ahn, Byeong-Hyeon; Kim, Ju-Young; Jeong, Kwang-Yong; Park, Hong-Gyu; Lee, Yong-Hee

2009-04-13

A wavelength-scale cavity is generated by printing a carbonaceous nano-block on a photonic-crystal waveguide. The nanometer-size carbonaceous block is grown at a pre-determined region by the electron-beam-induced deposition method. The wavelength-scale photonic-crystal cavity operates as a single mode laser, near 1550 nm with threshold of approximately 100 microW at room temperature. Finite-difference time-domain computations show that a high-quality-factor cavity mode is defined around the nano-block with resonant wavelength slightly longer than the dispersion-edge of the photonic-crystal waveguide. Measured near-field images exhibit photon distribution well-localized in the proximity of the printed nano-block. Linearly-polarized emission along the vertical direction is also observed.

Design of ultra compact polarization splitter based on complete photonic band gap

NASA Astrophysics Data System (ADS)

Sinha, R. K.; Nagpal, Yogita

2005-11-01

Certain select structures in photonic crystals (PhCs) exhibit complete photonic band gap i.e. a frequency region where the photonic band gaps for both polarizations (i.e. transverse electric and transverse magnetic modes) exist and overlap. One of the most fundamental applications of the photonic band gap structures is the design of photonic crystal waveguides, which can be made by inserting linear defects in the photonic crystal structures. By setting closely two parallel 2D PhC waveguides, a directional waveguide coupler can be designed, which can be used to design a polarization splitter. In this paper we design a polarization splitter in a photonic crystal structure composed of two dimensional honeycomb pattern of dielectric rods in air. This photonic crystal structure exhibits a complete photonic band gap that extends from λ = 1.49 μm to λ = 1.61 μm, where lambda is the wavelength in free space, providing a large bandwidth of 120 nm. A polarization splitter can be made by designing a polarization selective coupler. The coupling lengths at various wavelengths for both polarizations have been calculated using the Finite Difference Time Domain method. It has been shown that the coupling length, for TE polarization is much smaller as compared to that for the TM polarization. This principle is used to design a polarization splitter of length 32 μm at λ = 1.55 μm. Further, the spectral response of the extinction ratios for both polarizations in the two waveguides at propagation distance of 32 μm has been studied.

On-chip electrically controlled routing of photons from a single quantum dot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bentham, C.; Coles, R. J.; Royall, B.

2015-06-01

Electrical control of on-chip routing of photons emitted by a single InAs/GaAs self-assembled quantum dot (SAQD) is demonstrated in a photonic crystal cavity-waveguide system. The SAQD is located inside an H1 cavity, which is coupled to two photonic crystal waveguides. The SAQD emission wavelength is electrically tunable by the quantum-confined Stark effect. When the SAQD emission is brought into resonance with one of two H1 cavity modes, it is preferentially routed to the waveguide to which that mode is selectively coupled. This proof of concept provides the basis for scalable, low-power, high-speed operation of single-photon routers for use in integratedmore » quantum photonic circuits.« less

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures

NASA Astrophysics Data System (ADS)

Frabboni, S.; Grillo, V.; Gazzadi, G. C.; Balboni, R.; Trotta, R.; Polimeni, A.; Capizzi, M.; Martelli, F.; Rubini, S.; Guzzinati, G.; Glas, F.

2012-09-01

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.

Enhanced photoresponsivity in graphene-silicon slow-light photonic crystal waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Hao, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu; Optical Nanostructures Laboratory, Columbia University, New York, New York 10027; Gu, Tingyi, E-mail: zhoufirst@scu.edu.cn, E-mail: tg2342@columbia.edu, E-mail: cheewei.wong@ucla.edu

2016-03-14

We demonstrate the enhanced fast photoresponsivity in graphene hybrid structures by combining the ultrafast dynamics of graphene with improved light-matter interactions in slow-light photonic crystal waveguides. With a 200 μm interaction length, a 0.8 mA/W photoresponsivity is achieved in a graphene-silicon Schottky-like photodetector, with an operating bandwidth in excess of 5 GHz and wavelength range at least from 1480 nm to 1580 nm. Fourfold enhancement of the photocurrent is observed in the slow light region, compared to the wavelength far from the photonic crystal bandedge, for a chip-scale broadband fast photodetector.

A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers

NASA Technical Reports Server (NTRS)

Larsson, A.; Forouhar, S.; Cody, J.; Lang, R. J.; Andrekson, P. A.

1990-01-01

The authors have fabricated ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs GRIN-SCH SQW (graded-index separate-confinement-heterostructure single-quantum-well) lasers, emitting at 980 nm, with a maximum output power of 240 mW from one facet and a 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. These lasers satisfy the requirements on efficient and compact pump sources for Er3+-doped fiber amplifiers.

Barium Titanate Photonic Crystal Electro-Optic Modulators for Telecommunication and Data Network Applications

NASA Astrophysics Data System (ADS)

Girouard, Peter D.

The microwave, optical, and electro-optic properties of epitaxial barium titanate thin films grown on (100) MgO substrates and photonic crystal electro-optic modulators fabricated on these films were investigated to demonstrate the applicability of these devices for telecommunication and data networks. The electrical and electro-optical properties were characterized up to modulation frequencies of 50 GHz, and the optical properties of photonic crystal waveguides were determined for wavelengths spanning the optical C band between 1500 and 1580 nm. Microwave scattering parameters were measured on coplanar stripline devices with electrode gap spacings between 5 and 12 mum on barium titanate films with thicknesses between 230 and 680 nm. The microwave index and device characteristic impedance were obtained from the measurements. Larger (lower) microwave indices (impedances) were obtained for devices with narrower electrode gap spacings and on thicker films. Thinner film devices have both lower index mismatch between the co-propagating microwave and optical signals and lower impedance mismatch to a 50O system, resulting in a larger predicted electro-optical 3 dB bandwidth. This was experimentally verified with electro-optical frequency response measurements. These observations were applied to demonstrate a record high 28 GHz electro-optic bandwidth measured for a BaTiO3 conventional ridge waveguide modulator having 1mm long electrodes and 12 mum gap spacing on a 260nm thick film. The half-wave voltage and electro-optic coefficients of barium titanate modulators were measured for films having thicknesses between 260 and 500 nm. The half-wave voltage was directly measured at low frequencies using a polarizer-sample-compensator-analyzer setup by over-driving waveguide integrated modulators beyond their linear response regime. Effective in-device electro-optic coefficients were obtained from the measured half-wave voltages. The effective electro-optic coefficients were found to increase with both applied electrical dc bias and with film thickness. A record low 0.39V ˙ cm (0.45V ˙ cm) voltage-length product was measured for barium titanate modulators operating at telecommunication wavelengths on a device with 5 ?m electrode gap spacing on a 500nm thick film modulated at a frequency of 100 Hz (1 MHz). This measured voltage-length product is more than a factor of 5 lower than that reported for state-of-the-art silicon conventional waveguide modulators. The electro-optical characterization of BaTiO3 films revealed a trade-off that exists for traveling wave BaTiO3 modulators: lower voltages are obtained in thicker film devices with narrow electrode gap spacing while larger bandwidths are obtained in thinner film devices with wider electrode gap spacing. These findings were supported by calculations of the film thickness dependent half-wave voltage and electro-optic bandwidth. In order to demonstrate modulators having simultaneously low voltage operation and high electro-optic bandwidth, photonic crystal waveguide modulators with large group index were investigated through theory and experiment. The theory for slow light phase delay in linear optical materials was extended for second order nonlinear optical materials. This theory was incorporated into a detailed model for predicting photonic crystal modulator performance in terms of voltage-length product and electro-optic bandwidth. Modeling shows that barium titanate photonic crystal modulators with sub-millimeter length, sub-volt operation, and greater than 40 GHz electro-optic bandwidth are achievable in a single device. Two types of photonic crystal waveguides (PC) on BaTiO3 films were designed, fabricated, and characterized: waveguides with hexagonal lattice symmetry and waveguides with hexagonal symmetry having a line defect oriented in the direction of light propagation. Excellent agreement was obtained between the simulated and measured transmission for hexagonal lattice PC waveguides. An extinction of 20 dB was measured across a 9.9 nm stop band edge, yielding a record large band edge sharpness of 2 dB/nm for all photonic crystal waveguides on ferroelectric films. A 12-fold enhancement of the electro-optic coefficient was measured via optical spectral analysis in a line defect BaTiO3 modulator, yielding an effective electro-optic coefficient of 900 pm/V in the photonic crystal region at a modulation frequency of 10 GHz. This enhancement was demonstrated over a 48 nm range, demonstrating the wideband operation of these devices.

Optical Arbitrary Waveform Generators Based on Temporal and Spectral Shaping of Optical Pulses in Nonlinear Metamaterials

DTIC Science & Technology

2011-06-01

of a flat-top (thin lines) and a kink (thick lines) soliton . Here = 0.25,Q = 1.786 553 604 650 208 for the dark soliton (Q = 1.786 553 7 for the flat...localization and transport in different physical settings, ranging from metal-dielectric (i.e. plasmonic) to photonic crystal waveguides. The solitons ...settings, ranging from metal--dielectric (i.e. plasmonic) to photonic crystal waveguides. The solitons exist for focusing, defocusing and even for

Temperature induced degradation mechanisms of AlInAs/InGaAs/InP quantum cascade lasers

NASA Astrophysics Data System (ADS)

Pierścińska, D.; Pierściński, K.; Płuska, M.; Sobczak, G.; Kuźmicz, A.; Gutowski, P.; Bugajski, M.

2018-01-01

In this paper, we report on the investigation of temperature induced degradation mode of quantum cascade lasers (QCLs) with an emphasis on the influence of different processing technology. We investigate and compare lattice matched AlInAs/InGaAs/InP QCLs of various constructions, i.e., double trench, buried heterostructure and ridge waveguide regarding thermal management, reliability and sources of degradation. The analysis was performed by CCD thermoreflectance spectroscopy, scanning electron microscope inspection and destructive analysis by focused ion beam etching, enabling determination of the source and mode of degradation for investigated lasers. Experimental temperature data relate temperature rise, arising from supply current, with device geometry. Results clearly indicate, that the buried heterostructure geometry, allows reaching the highest maximal operating current densities, before the degradation occurs. Microscopic images of degradation confirm that degradation includes the damage of the contact layer as well as damage of the active region layers.

Integration of carbon nanotubes in slot waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Durán-Valdeiglesias, Elena; Zhang, Weiwei; Hoang, Thi Hong Cam; Alonso-Ramos, Carlos; Serna, Samuel; Le Roux, Xavier; Cassan, Eric; Balestrieri, Matteo; Keita, Al-Saleh; Sarti, Francesco; Biccari, Francesco; Torrini, Ughetta; Vinattieri, Anna; Yang, Hongliu; Bezugly, Viktor; Cuniberti, Gianaurelio; Filoramo, Arianna; Gurioli, Massimo; Vivien, Laurent

2016-05-01

Demanding applications such as video streaming, social networking, or web search relay on a large network of data centres, interconnected through optical links. The ever-growing data rates and power consumption inside these data centres are pushing copper links close to their fundamental limits. Optical interconnects are being extensively studied with the purpose of solving these limitations. Among the different possible technology platforms, silicon photonics, due to its compatibility with the CMOS platform, has become one of the preferred solutions for the development of the future generation photonic interconnects. However, the on-chip integration of all photonic and optoelectronic building blocks (sources, modulators and detectors…) is very complex and is not cost-effective due to the various materials involved (Ge for detection, doped Si for modulators and III-V for lasing). Carbon nanotubes (CNTs) are nanomaterials of great interest in photonics thanks to their fundamental optical properties, including near-IR room-temperature foto- and electro- luminescence, Stark effect, Kerr effect and absorption. In consequence, CNTs have the ability to emit, modulate and detect light in the telecommunications wavelength range. Furthermore, they are being extensively developed for new nano-electronics applications. In this work, we propose to use CNTs as active material integrated into silicon photonics for the development of all optoelectronic devices. Here, we report on the development of new integration schemes to couple the light emission from CNTs into optical resonators implemented on the silicon-on-insulator and silicon-nitride-on-insulator platforms. A theoretical and experimental analysis of the light interaction of CNTs with micro-ring resonators based on strip and slot waveguides and slot photonic crystal heterostructure cavities were carried out.

Voltage- and temperature- controlled LC:PDMS waveguide channels

NASA Astrophysics Data System (ADS)

Rutkowska, Katarzyna A.; Asquini, Rita; d'Alessandro, Antonio

2017-08-01

In this paper, we present our studies on electrical and thermal tuning of light propagation in waveguide channels, made for the scope from a polydimethylsiloxane (PDMS) substrate infiltrated with nematic liquid crystal (LC). We demonstrated, via numerical simulations, the changes of the waveguide optical parameters when solicited by temperature changes or electric fields. Moreover, the paper goes through the fabrication process of a waveguide channel sample and its characterization, as well as some preliminary experimental trials of sputtering indium tin oxide (ITO) and chromium layers on PDMS substrate to obtain flat electrodes.

Photonic Choke-Joints for Dual-Polarization Waveguides

NASA Technical Reports Server (NTRS)

Wollack, Edward J.; U-yen, Kongpop; Chuss, David T.

2010-01-01

Photonic choke joint (PCJ) structures for dual-polarization waveguides have been investigated for use in device and component packaging. This interface enables the realization of a high performance non-contacting waveguide joint without degrading the in-band signal propagation properties. The choke properties of two tiling approaches, symmetric square Cartesian and octagonal quasi-crystal lattices of metallic posts, are explored and optimal PCJ design parameters are presented. For each of these schemes, the experimental results for structures with finite tilings demonstrate near ideal transmission and reflection performance over a full waveguide band.

Phonon Routing in Integrated Optomechanical Cavity-waveguide Systems

DTIC Science & Technology

2015-08-20

optomechanical crystal cavities connected by a dispersion-engineered phonon waveguide. Pulsed and continuous- wave measurements are first used to char- acterize...device layer of a silicon-on-insulator wafer (see App. A), and consists of several parts: an op- tomechanical cavity with co- localized optical and acous... localized cavity mode and the nearly- resonant phonon waveguide modes. The optical coupling waveg- uide is fabricated in the near-field of the nanobeam

Ultrafast modulators based on nonlinear photonic crystal waveguides

NASA Astrophysics Data System (ADS)

Liu, Zhifu; Li, Jianheng; Tu, Yongming; Ho, Seng-Tiong; Wessels, Bruce W.

2011-03-01

Nonlinear photonic crystal (PhC) waveguides are being developed for ultrafast modulators. To enable phase velocity matching we have investigated one- and two-dimensional structures. Photonic crystal (PhC) waveguides based on epitaxial barium titanate (BTO) thin film in a Si3N4/BTO/MgO multilayer structure were fabricated by electron beam lithography or focused ion beam (FIB) milling. For both one- and two-dimensional PhCs, simulation shows that sufficient refractive index contrast is achieved to form a stop band. For one-dimensional Bragg reflector, we measured its slow light properties and the group refractive index of optical wave. For a millimeter long waveguide a 27 nm wide stop band was obtained at 1550 nm. A slowing of the light was observed, the group refractive indices at the mid band gap and at the band edges were estimated to be between 8.0 and 12 for the transverse electric (TE) mode, and 6.9 and 13 for the transverse magnetic (TM) mode. For TE optical modes, the enhancement factor of EO coefficient ranges from 7 to 13, and for the TM mode, the factor ranges from 5.9 to 15. Measurements indicate that near velocity phase matching can be realized. Upon realizing the phase velocity matching condition, devices with a small foot print with bandwidths at 490 GHz can be attained. Two-dimensional PhC crystal with a hexagonal lattice was also investigated. The PhCs were fabricated from epitaxial BTO thin film multilayers using focused ion beam milling. The PhCs are based on BTO slab waveguide and air hole arrays defined within Si3N4 and BTO thin films. A refractive index contrast of 0.4 between the barium titanate thin film multilayers and the air holes enables strong light confinement. For the TE optical mode, the hexagonal photonic crystal lattice with a diameter of 155 nm and a lattice constant of 740 nm yields a photonic bandgap over the wavelength range from 1525 to 1575 nm. The transmission spectrum of the PhC waveguide exhibits stronger Fabry Perot resonance compared to that of conventional waveguide. Measured transmission spectra show a bandgap in the ΓM direction in the reciprocal lattice that is in agreement with the simulated results using the finite-difference time-domain (FDTD) method. Compared to polarization intensity EO modulator with a half-wave voltage length product of 4.7 V•mm. The PhC based EO modulator has a factor of 6.6 improvement in the figure of merit performance. The thin film PhC waveguide devices show considerable potential for ultra-wide bandwidth electro-optic modulators as well as tunable optical filters and switches.

Multiple temperature sensors embedded in an ultrasonic "spiral-like" waveguide

NASA Astrophysics Data System (ADS)

Periyannan, Suresh; Rajagopal, Prabhu; Balasubramaniam, Krishnan

2017-03-01

This paper studies the propagation of ultrasound in spiral waveguides, towards distributed temperature measurements on a plane. Finite Element (FE) approach was used for understanding the velocity behaviour and consequently designing the spiral waveguide. Temperature measurements were experimentally carried out on planar surface inside a hot chamber. Transduction was performed using a piezo-electric crystal that is attached to one end of the waveguide. Lower order axisymmetric guided ultrasonic modes L(0,1) and T(0,1) were employed. Notches were introduced along the waveguide to obtain ultrasonic wave reflections. Time of fight (TOF) differences between the pre-defined reflectors (notches) located on the waveguides were used to infer local temperatures. The ultrasonic temperature measurements were compared with commercially available thermocouples.

Ridge waveguide laser in Nd:LiNbO3 by Zn-diffusion and femtosecond-laser structuring

NASA Astrophysics Data System (ADS)

Martínez de Mendívil, Jon; del Hoyo, Jesús; Solís, Javier; Lifante, Ginés

2016-12-01

Ridge waveguide lasers have been fabricated on Nd3+ doped LiNbO3 crystals. The fs-laser writing technique was used to define ridge structures on a gradient-index planar waveguide fabricated by Zn-diffusion. This planar waveguide was formed in a z-cut LiNbO3 substrate homogeneously doped with a 0.23% of Nd3+ ions. To obtain lateral light confinement, the surface was then micromachined using a multiplexed femtosecond laser writing beam, forming the ridge structures. By butting two mirrors at the channel waveguide end-facets, forming a waveguide laser cavity, TM-polarized laser action at 1085 nm was achieved by end-fire TM-pumping at 815 nm. The waveguide laser shows a threshold of 31 mW, with a 7% of slope efficiency.

Hydrogen Surfactant Effect on ZnO/GaN Heterostructures Growth

NASA Astrophysics Data System (ADS)

Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

To grow high quality heterostructures based on ZnO and GaN, growth conditions that favor the layer by layer (Frank-Van der Merwe) growth mode have to be applied. However, if A wets B, B would not wet A without special treatments. A famous example is the epitaxial growth of Si/Ge/Si heterostructure with the help of arsenic surfactant in the late 1980s. It has been confirmed by the previous experiments and our calculations that poor crystal quality and 3D growth mode were obtained when GaN grown on ZnO polar surfaces while high quality ZnO was achieved on (0001) and (000-1)-oriented GaN. During the standard OMVPE growth processes, hydrogen is a common impurity and hydrogen-involved surface reconstructions have been well investigated experimentally and theoretically elsewhere. Due to the above facts, we proposed key growth strategies by using hydrogen as a surfactant to achieve ideal growth mode for GaN on ZnO (000-1) surface. This novel strategy may for the first time make the growth of high quality GaN single crystal on ZnO substrate possible. This surfactant effect is expected to largely improve the crystal quality and the efficiency of ZnO/GaN super lattices or other heterostructure devices. Part of the computing resources was provided by the High Performance Cluster Computing Centre, Hong Kong Baptist University. This work was supported by the start-up funding and direct Grant with the Project code of 4053134 and 3132748 at CUHK.

Ultracompact 1×4 TM-polarized beam splitter based on photonic crystal surface mode.

PubMed

Jiang, Bin; Zhang, Yejin; Wang, Yufei; Liu, Anjin; Zheng, Wanhua

2012-05-01

We provide an improved surface-mode photonic crystal (PhC) T-junction waveguide, combine it with an improved PhC bandgap T-junction waveguide, and then provide an ultracompact 1×4 TM-polarized beam splitter. The energy is split equally into the four output waveguides. The maximal transmission ratio of each output waveguide branch equals 24.7%, and the corresponding total transmission ratio of the ultracompact 1×4 beam splitter equals 98.8%. The normalized frequency of maximal transmission ratio is 0.397(2πc/a), and the bandwidth of the ultracompact 1×4 TM-polarized beam splitter is 0.0106(2πc/a). To the best of our knowledge, this is the first time such a high-efficiency 1×4 beam splitter exploiting the nonradiative surface mode as a guided mode has been proposed. Although we only employed a 1×4 beam splitter, our design can easily be extended to other 1×n beam splitters.

Waveguide effect under 'antiguiding' conditions in graded anisotropic media.

PubMed

Kozlov, A V; Mozhaev, V G; Zyryanova, A V

2010-02-24

A new wave confinement effect is predicted in graded crystals with a concave slowness surface under conditions of growth of the phase velocity with decreasing distance from the waveguide axis. This finding overturns the common notion about the guiding and 'antiguiding' profiles of wave velocity in inhomogeneous media. The waveguide effect found is elucidated by means of ray analysis and particular exact wave solutions. The exact solution obtained for localized flexural waves in thin plates of graded cubic and tetragonal crystals confirms the predicted effect. Since this solution is substantially different with respect to the existence conditions from all others yet reported, and it cannot be deduced from the previously known results, the predicted waves can be classified as a new type of waveguide mode in graded anisotropic media. Although the concrete calculations are given in the article for acoustic waves, its general predictions are expected to be valid for waves of various natures, including spin, plasma, and optical waves.

Picosecond pulsed micro-module emitting near 560 nm using a frequency doubled gain-switched DBR ridge waveguide semiconductor laser

NASA Astrophysics Data System (ADS)

Kaltenbach, André; Hofmann, Julian; Seidel, Dirk; Lauritsen, Kristian; Bugge, Frank; Fricke, Jörg; Paschke, Katrin; Erdmann, Rainer; Tränkle, Günther

2017-02-01

A miniaturized picosecond pulsed semiconductor laser source in the spectral range around 560nm is realized by integrating a frequency doubled distributed Bragg reflector ridge waveguide laser (DBR-RWL) into a micromodule. Such compact laser sources are suitable for mobile application, e.g. in microscopes. The picosecond optical pulses are generated by gain-switching which allows for arbitrary pulse repetition frequencies. For frequency conversion a periodically poled magnesium doped lithium niobate ridge waveguide crystal (PPLN) is used to provide high conversion efficiency with single-pass second harmonic generation (SHG). The coupling of the pulsed radiation into the PPLN crystal is realized by a GRIN-lens. Such types of lenses collect the divergent laser radiation and focus it into the crystal waveguide providing high coupling efficiency at a minimum of space compared to the usage of fast axis collimator(FAC)/slow axis collimator (SAC) lens combinations. The frequency doubled output pulses show a pulse width of about 60 ps FWHM and a spectral width around 0.06nm FWHM at a central wavelength of 557nm at 15Å. The pulse peak power could be determined to be more than 300mW at a repetition frequency of 40 MHz.

Efficient yellow-green light generation at 561 nm by frequency-doubling of a QD-FBG laser diode in a PPLN waveguide.

PubMed

Fedorova, Ksenia A; Sokolovskii, Grigorii S; Khomylev, Maksim; Livshits, Daniil A; Rafailov, Edik U

2014-12-01

A compact high-power yellow-green continuous wave (CW) laser source based on second-harmonic generation (SHG) in a 5% MgO doped periodically poled congruent lithium niobate (PPLN) waveguide crystal pumped by a quantum-dot fiber Bragg grating (QD-FBG) laser diode is demonstrated. A frequency-doubled power of 90.11 mW at the wavelength of 560.68 nm with a conversion efficiency of 52.4% is reported. To the best of our knowledge, this represents the highest output power and conversion efficiency achieved to date in this spectral region from a diode-pumped PPLN waveguide crystal, which could prove extremely valuable for the deployment of such a source in a wide range of biomedical applications.

Phononic Crystal Waveguide Transducers for Nonlinear Elastic Wave Sensing.

PubMed

Ciampa, Francesco; Mankar, Akash; Marini, Andrea

2017-11-07

Second harmonic generation is one of the most sensitive and reliable nonlinear elastic signatures for micro-damage assessment. However, its detection requires powerful amplification systems generating fictitious harmonics that are difficult to discern from pure nonlinear elastic effects. Current state-of-the-art nonlinear ultrasonic methods still involve impractical solutions such as cumbersome signal calibration processes and substantial modifications of the test component in order to create material-based tunable harmonic filters. Here we propose and demonstrate a valid and sensible alternative strategy involving the development of an ultrasonic phononic crystal waveguide transducer that exhibits both single and multiple frequency stop-bands filtering out fictitious second harmonic frequencies. Remarkably, such a sensing device can be easily fabricated and integrated on the surface of the test structure without altering its mechanical and geometrical properties. The design of the phononic crystal structure is supported by a perturbative theoretical model predicting the frequency band-gaps of periodic plates with sinusoidal corrugation. We find our theoretical findings in excellent agreement with experimental testing revealing that the proposed phononic crystal waveguide transducer successfully attenuates second harmonics caused by the ultrasonic equipment, thus demonstrating its wide range of potential applications for acousto/ultrasonic material damage inspection.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

GaN/NbN epitaxial semiconductor/superconductor heterostructures.

PubMed

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D Scott; Nepal, Neeraj; Downey, Brian P; Muller, David A; Xing, Huili G; Meyer, David J; Jena, Debdeep

2018-03-07

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Hybrid photonic crystal cavity and waveguide for coupling to diamond NV-centers.

PubMed

Barclay, Paul E; Fu, Kai-Mei; Santori, Charles; Beausoleil, Raymond G

2009-06-08

A design for an ultra-high Q photonic crystal nanocavity engineered to interact with nitrogen-vacancy (NV) centers located near the surface of a single crystal diamond sample is presented. The structure is based upon a nanowire photonic crystal geometry, and consists of a patterned high refractive index thin film, such as gallium phosphide (GaP), supported by a diamond substrate. The nanocavity supports a mode with quality factor Q > 1.5 x 10(6) and mode volume V < 0.52(lambda/nGaP)(3), and promises to allow Purcell enhanced collection of spontaneous emission from an NV located more than 50 nm below the diamond surface. The nanowire photonic crystal waveguide can be used to efficiently couple light into and out of the cavity, or as an efficient broadband collector of NV phonon sideband emission. The proposed structures can be fabricated using existing materials and processing techniques.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Electrical response of InGaAsP/InP heterolasers

NASA Astrophysics Data System (ADS)

Luc, Vu V.; Eliseev, P. G.; Man'ko, Margarita A.; Tsotsorya, M. V.

1988-11-01

An investigation was made of the change in the voltage across laser diodes emitting in the 1.3 μm range as a result of introduction of an external optical feedback in the form of an electrical response to interruption of the feedback ("optoelectronic" signal). Measurements were made on single-mode buried stripe heterostructures, using both unpackaged laboratory lasers and also serially manufactured ILPN-202 devices with radiation coupled out via a fiber waveguide. The optoelectronic signal reached 10-16 mV, but when a fiber waveguide was used, it was only 0.1-0.8 mV, depending on the quality of the contact between the laser and the fiber. Experiments showed that the ILPN-202 lasers could be used without any additional optics as sensors capable of detection of submicron displacements with a sensitivity in excess of 10 kV/m.

Silicon chip integrated photonic sensors for biological and chemical sensing

NASA Astrophysics Data System (ADS)

Chakravarty, Swapnajit; Zou, Yi; Yan, Hai; Tang, Naimei; Chen, Ray T.

2016-03-01

We experimentally demonstrate applications of photonic crystal waveguide based devices for on-chip optical absorption spectroscopy for the detection of chemical warfare simulant, triethylphosphate as well as applications with photonic crystal microcavity devices in the detection of biomarkers for pancreatic cancer in patient serum and cadmium metal ions in heavy metal pollution sensing. At mid-infrared wavelengths, we experimentally demonstrate the higher sensitivity of photonic crystal based structures compared to other nanophotonic devices such as strip and slot waveguides with detection down to 10ppm triethylphosphate. We also detected 5ppb (parts per billion) of cadmium metal ions in water at near-infrared wavelengths using established techniques for the detection of specific probe-target biomarker conjugation chemistries.

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

PubMed Central

Reardon, Christopher Paul; Rey, Isabella H.; Welna, Karl; O'Faolain, Liam; Krauss, Thomas F.

2012-01-01

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals1-4 and the enhancement of both linear5-7 and nonlinear devices.8-11 Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically12 and electrically13 pumped ultra-low threshold lasers and the enhancement of nonlinear effects.14-16 Furthermore, passive filters17 and modulators18-19 have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption. To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues. The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum20-21 and interferometric techniques.22-25 Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.26 Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans. When characterising photonic crystal cavities, techniques involving internal sources21 or external waveguides directly coupled to the cavity27 impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.28 and further developed by Galli et al.29 PMID:23222804

Optical ridge waveguides preserving the thermo-optic features in LiNbO3 crystals fabricated by combination of proton implantation and selective wet etching.

PubMed

Tan, Yang; Chen, Feng

2010-05-24

We report on a new, simple method to fabricate optical ridge waveguides in a z-cut LiNbO3 wafer by using proton implantation and selective wet etching. The measured modal field is well confined in the ridge waveguide region, which is also confirmed by the numerical simulation. With thermal annealing treatment at 400 degrees C, the propagation loss of the ridge waveguides is determined to be as low as approximately 0.9 dB/cm. In addition, the measured thermo-optic coefficients of the waveguides are in good agreement with those of the bulk, suggesting potential applications in integrated photonics.

Wavelength selective switch array employing silica-based waveguide frontend with integrated polarization diversity optics.

PubMed

Sakamaki, Yohei; Shikama, Kota; Ikuma, Yuichiro; Suzuki, Kenya

2017-08-21

We propose a waveguide frontend with integrated polarization diversity optics for a wavelength selective switch (WSS) array with a liquid crystal on silicon switching engine to simplify the free space optics configuration and the alignment process in optical modules. The polarization diversity function is realized by the integration of a waveguide-type polarization beam splitter and a polarization rotating half-wave plate in a beam launcher using silica-based planar lightwave circuit technology. We confirmed experimentally the feasibility of using our proposed waveguide frontend in a two-in-one 1 × 20 WSS. The experimental results show that the fabricated waveguide frontend provides a polarization diversity function without any degradation in optical performance.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

PubMed

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

PubMed Central

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

2016-01-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells. PMID:27152356

Low temperature solution synthesis of silicon, germanium and Si-Ge axial heterostructures in nanorod and nanowire form.

PubMed

Flynn, G; Stokes, K; Ryan, K M

2018-05-31

Herein, we report the formation of silicon, germanium and more complex Si-SixGe1-x and Si-Ge axial 1D heterostructures, at low temperatures in solution. These nanorods/nanowires are grown using phenylated compounds of silicon and germanium as reagents, with precursor decomposition achieved at substantially reduced temperatures (200 °C for single crystal nanostructures and 300 °C for heterostructures), through the addition of a reducing agent. This low energy route for the production of these functional nanostructures as a wet chemical in high yield is attractive to meet the processing needs for next generation photovoltaics, batteries and electronics.

Multiplicity of transmission coefficients in photonic crystal and split ring resonator waveguides with Kerr nonlinear impurities

NASA Astrophysics Data System (ADS)

Rai, Buddhi; McGurn, Arthur R.

2015-02-01

Photonic crystal and split ring resonator (SRR) metamaterial waveguides with Kerr nonlinear dielectric impurities are studied. The transmission coefficients for two guided modes of different frequencies scattering from the Kerr impurities are computed. The systems are shown to exhibit multiple transmission coefficient solutions arising from the Kerr nonlinearity. Multiple transmission coefficients occur when different input intensities into a waveguide result in the same transmitted output intensities past its nonlinear impurities. (In the case of a single incident guided mode the multiplicity of transmission coefficients is known as optical bistability.) The analytical conditions under which the transmission coefficients are single and multiple valued are determined, and specific examples of both single and multiple valued transmission coefficient scattering are presented. Both photonic crystal and split ring resonator systems are studied as the Kerr nonlinearity enters the photonic crystal and SRR systems in different ways. This allows for an interesting comparison of the differences in behaviors of these two types of system which are described by distinctly different mathematical structures. Both the photonic crystal and SRR models used in the calculations are based on a difference equation approach to the system dynamics. The difference equation approach has been extensively employed in previous papers to model the basic properties of these systems. The paper is a continuation of work on the optical bistability of single guided modes interacting with Kerr impurities in photonic crystals originally considered by McGurn [Chaos 13, 754 (2003), 10.1063/1.1568691] and work on the resonant scattering from Kerr impurities in photonic crystal waveguides considered by McGurn [J. Phys.: Condens. Matter 16, S5243 (2004), 10.1088/0953-8984/16/44/021]. It generalizes this work making the extension to the more complex interaction of two guided modes at different frequencies. It extends the two guided mode treatment by McGurn [Organ. Electron. 8, 227 (2007), 10.1016/j.orgel.2006.06.008] which was limited to a special case of one of the photonic crystal systems considered here.

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Lin, Ming-Wei; Lin, Junhao

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE PAGES

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; ...

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Linear spectral response of a Fano-resonant graded-stub filter based on pillar-photonic-crystal waveguides.

PubMed

Tokushima, Masatoshi

2018-02-01

To achieve high spectral linearity, we developed a Fano-resonant graded-stub filter on the basis of a pillar-photonic-crystal (PhC) waveguide. In a numerical simulation, the availability of a linear region within a peak-to-bottom wavelength span was nearly doubled compared to that of a sinusoidal spectrum, which was experimentally demonstrated with a fabricated silicon-pillar PhC stub filter. The high linearity of this filter is suitable for optical modulators used in multilevel amplitude modulation.

Tight-binding calculation of radiation loss in photonic crystal CROW.

PubMed

Ma, Jing; Martínez, Luis Javier; Fan, Shanhui; Povinelli, Michelle L

2013-01-28

The tight binding approximation (TBA) is used to relate the intrinsic, radiation loss of a coupled resonator optical waveguide (CROW) to that of a single constituent resonator within a light cone picture. We verify the validity of the TBA via direct, full-field simulation of CROWs based on the L2 photonic crystal cavity. The TBA predicts that the quality factor of the CROW increases with that of the isolated cavity. Moreover, our results provide a method to design CROWs with low intrinsic loss across the entire waveguide band.

Dissipationless transport of spin-polarized electrons and Cooper pairs in an electron waveguide

NASA Astrophysics Data System (ADS)

Levy, J.; Annadi, A.; Lu, S.; Cheng, G.; Tylan-Tyler, A.; Briggeman, M.; Tomczyk, M.; Huang, M.; Pekker, D.; Irvin, P.; Lee, H.; Lee, J.-W.; Eom, C.-B.

Electron systems undergo profound changes in their behavior when constrained to move along a single axis. To date, clean one-dimensional (1D) electron transport has only been observed in carbon-based nanotubes and nanoribbons, and compound semiconductor nanowires. Complex-oxide heterostructures can possess conductive two-dimensional (2D) interfaces with much richer chemistries and properties, e.g., superconductivity, but with mobilities that appear to preclude ballistic transport in 1D. Here we show that nearly ideal 1D electron waveguides exhibiting ballistic transport of electrons and non-superconducting Cooper pairs can be formed at the interface between the two band insulators LaAlO3 and SrTiO3. The electron waveguides possess gate and magnetic-field selectable spin and charge degrees of freedom, and can be tuned to the one-dimensional limit of a single spin-polarized quantum channel. The strong attractive electron-electron interactions enable a new mode of dissipationless transport of electron pairs that is not superconducting. The selectable spin and subband quantum numbers of these electron waveguides may be useful for quantum simulation, quantum informatio We gratefully acknowledge financial support from ONR N00014-15-1-2847 (JL), AFOSR (FA9550-15-1-0334 (CBE) and FA9550-12-1-0057 (JL, CBE)), AOARD FA2386-15-1-4046 (CBE) and NSF (DMR-1104191 (JL), DMR-1124131 (CBE, JL) and DMR-1234096 (CBE)).

Investigation of energy band alignments and interfacial properties of rutile NMO2/TiO2 (NM = Ru, Rh, Os, and Ir) by first-principles calculations.

PubMed

Yang, Chen; Zhao, Zong-Yan

2017-11-08

In the field of photocatalysis, constructing hetero-structures is an efficient strategy to improve quantum efficiency. However, a lattice mismatch often induces unfavorable interfacial states that can act as recombination centers for photo-generated electron-hole pairs. If the hetero-structure's components have the same crystal structure, this disadvantage can be easily avoided. Conversely, in the process of loading a noble metal co-catalyst onto the TiO 2 surface, a transition layer of noble metal oxides is often formed between the TiO 2 layer and the noble metal layer. In this article, interfacial properties of hetero-structures composed of a noble metal dioxide and TiO 2 with a rutile crystal structure have been systematically investigated using first-principles calculations. In particular, the Schottky barrier height, band bending, and energy band alignments are studied to provide evidence for practical applications. In all cases, no interfacial states exist in the forbidden band of TiO 2 , and the interfacial formation energy is very small. A strong internal electric field generated by interfacial electron transfer leads to an efficient separation of photo-generated carriers and band bending. Because of the differences in the atomic properties of the components, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures demonstrate band dividing, while RhO 2 /TiO 2 and IrO 2 /TiO 2 hetero-structures have a pseudo-gap near the Fermi energy level. Furthermore, NMO 2 /TiO 2 hetero-structures show upward band bending. Conversely, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures present a relatively strong infrared light absorption, while RhO 2 /TiO 2 and IrO 2 /TiO 2 hetero-structures show an obvious absorption edge in the visible light region. Overall, considering all aspects of their properties, RuO 2 /TiO 2 and OsO 2 /TiO 2 hetero-structures are more suitable than others for improving the photocatalytic performance of TiO 2 . These findings will provide useful information for understanding the role and effects of a noble metal dioxide as a transition layer between a noble metal co-catalyst and a TiO 2 photocatalyst.

Magneto-transport Properties Using Top-Gated Hall Bars of Epitaxial Heterostructures on Single-Crystal SiGe Nanomembranes

NASA Astrophysics Data System (ADS)

Jacobson, R. B.; Li, Yize; Foote, Ryan; Cui, Xiaorui; Savage, Donald; Sookchoo, Pornsatit; Eriksson, Mark; Lagally, Max

2014-03-01

A high-quality 2-dimensional electron gas (2DEG) is crucial for quantum electronics and spintronics. Grown heterostructures on SiGe nanomembranes (NMs) show promise to create these 2DEG structures because they have reduced strain inhomogeneities and mosaic tilt. We investigate charge transport properties of these SiGe NMs/heterostructures over a range of temperatures and compare them with results from heterostructures grown on compositionally graded SiGe substrates. Measurements are done by creating Hall bars with top gates on the samples. From the magneto-transport data, low-carrier-density mobility values are calculated. Initial results on the grown heterostructures give a typical curve for mobility versus carrier density, but extraction of the zero-carrier-density mobility is dependent on the curve-fitting technique. Sponsored by United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government.

Revealing the planar chemistry of two-dimensional heterostructures at the atomic level.

PubMed

Chou, Harry; Ismach, Ariel; Ghosh, Rudresh; Ruoff, Rodney S; Dolocan, Andrei

2015-06-23

Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures. As an example system, a graphene-on-h-BN heterostructure is analysed to reveal, with an unprecedented level of detail, the subtle chemistry and interactions within its layer structure that can be assigned to specific fabrication steps. Such detailed chemical information is of crucial importance for the complete integration of 2D heterostructures into functional devices.

Fabrication of Refractive Index Tunable Polydimethylsiloxane Photonic Crystal for Biosensor Application

NASA Astrophysics Data System (ADS)

Raman, Karthik; Murthy, T. R. Srinivasa; Hegde, G. M.

Photonic crystal based nanostructures are expected to play a significant role in next generation nanophotonic devices. Recent developments in two-dimensional (2D) photonic crystal based devices have created widespread interest as such planar photonic structures are compatible with conventional microelectronic and photonic devices. Various optical components such as waveguides, resonators, modulators and demultiplexers have been designed and fabricated based on 2D photonic crystal geometry. This paper presents the fabrication of refractive index tunable Polydimethylsiloxane (PDMS) polymer based photonic crystals. The advantages of using PDMS are mainly its chemical stability, bio-compatibility and the stack reduces sidewall roughness scattering. The PDMS structure with square lattice was fabricated by using silicon substrate patterned with SU8-2002 resist. The 600 nm period grating of PDMS is then fabricated using Nano-imprinting. In addition, the refractive index of PDMS is modified using certain additive materials. The resulting photonic crystals are suitable for application in photonic integrated circuits and biological applications such as filters, cavities or microlaser waveguides.

Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals

DOE PAGES

Li, Xufan; Basile Carrasco, Leonardo A.; Yoon, Mina; ...

2015-01-21

Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0° or 60° interlayer rotations. The commensurate stacking configurations (AA' and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale andmore » the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. Here, the combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.« less

Thermally evaporated hybrid perovskite for hetero-structured green light-emitting diodes

NASA Astrophysics Data System (ADS)

Mariano, Fabrizio; Listorti, Andrea; Rizzo, Aurora; Colella, Silvia; Gigli, Giuseppe; Mazzeo, Marco

2017-10-01

Thermal evaporation of green-light emitting perovskite (MaPbBr3) films is reported. Morphological studies show that a soft thermal treatment is needed to induce an outstanding crystal growth and film organization. Hetero-structured light-emitting diodes, embedding as-deposited and annealed MAPbBr3 films as active layers, are fabricated and their performances are compared, highlighting that the perovskite evolution is strongly dependent on the growing substrate, too.

Single-mode laser studies: Design and performance of a fixed-wave length source and coupling of lasers to thin-film optical waveguides

NASA Technical Reports Server (NTRS)

Ladany, I.; Hammer, J. M.

1980-01-01

A module developed for the generation of a stable single wavelength to be used for a fiber optic multiplexing scheme is described. The laser is driven with RZ pulses, and the temperature is stabilized thermoelectrically. The unit is capable of maintaining a fixed wavelength within about 6 A as the pulse duty cycle is changed between 0 and 100 percent. This is considered the most severe case, and much tighter tolerances are obtainable for constant input power coding schemes. Using a constricted double heterostructure laser, a wavelength shift of 0.083 A mA is obtained due to laser self-heating by a dc driving current. The thermoelectric unit is capable of maintaining a constant laser heat-sink temperature within 0.02 C. In addition, miniature lenses and couplers are described which allow efficient coupling of single wavelength modes of junction lasers to thin film optical waveguides. The design of the miniature cylinder lenses and the prism coupling techniques allow 2 mW of single wavelength mode junction laser light to b coupled into thin film waveguides using compact assemblies. Selective grating couplers are also studied.

Nonlinear optical properties of organic materials V; Proceedings of the 5th Meeting, San Diego, CA, July 22-24, 1992

NASA Astrophysics Data System (ADS)

Williams, David J.

The present volume on nonlinear optical properties of organic materials discusses organic nonlinear optics, polymers for nonlinear optics, characterization of nonlinear properties, photorefractive and second-order materials, harmonic generation in organic materials, and devices and applications. Particular attention is given to organic semiconductor-doped polymer glasses as novel nonlinear media, heterocyclic nonlinear optical materials, loss measurements in electrooptic polymer waveguides, the phase-matched second-harmonic generation in planar waveguides, electrooptic measurements in poled polymers, transient effects in spatial light modulation by nonlinearity-absorbing molecules, the electrooptic effects in organic single crystals, surface acoustic wave propagation in an organic nonlinear optical crystal, nonlinear optics of astaxanthin thin films; and advanced high-temperature polymers for integrated optical waveguides. (No individual items are abstracted in this volume)

Pseudo-One-Dimensional Magnonic Crystals for High-Frequency Nanoscale Devices

NASA Astrophysics Data System (ADS)

Banerjee, Chandrima; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan

2017-07-01

The synthetic magnonic crystals (i.e., periodic composites consisting of different magnetic materials) form one fascinating class of emerging research field, which aims to command the process and flow of information by means of spin waves, such as in magnonic waveguides. One of the intriguing features of magnonic crystals is the presence and tunability of band gaps in the spin-wave spectrum, where the high attenuation of the frequency bands can be utilized for frequency-dependent control on the spin waves. However, to find a feasible way of band tuning in terms of a realistic integrated device is still a challenge. Here, we introduce an array of asymmetric saw-tooth-shaped width-modulated nanoscale ferromagnetic waveguides forming a pseudo-one-dimensional magnonic crystal. The frequency dispersion of collective modes measured by the Brillouin light-scattering technique is compared with the band diagram obtained by numerically solving the eigenvalue problem derived from the linearized Landau-Lifshitz magnetic torque equation. We find that the magnonic band-gap width, position, and the slope of dispersion curves are controllable by changing the angle between the spin-wave propagation channel and the magnetic field. The calculated profiles of the dynamic magnetization reveal that the corrugation at the lateral boundary of the waveguide effectively engineers the edge modes, which forms the basis of the interactive control in magnonic circuits. The results represent a prospective direction towards managing the internal field distribution as well as the dispersion properties, which find potential applications in dynamic spin-wave filters and magnonic waveguides in the gigahertz frequency range.

Beam shaping of laser diode radiation by waveguides with arbitrary cladding geometry written with fs-laser radiation.

PubMed

Beckmann, Dennis; Schnitzler, Daniel; Schaefer, Dagmar; Gottmann, Jens; Kelbassa, Ingomar

2011-12-05

Waveguides with arbitrary cross sections are written in the volume of Al(2)O(3)-crystals using tightly focused femtosecond laser radiation. Utilizing a scanning system with large numerical aperture, complex cladding geometries are realized with a precision around 0.5 µm and a scanning speed up to 100 mm/s. Individual beam and mode shaping of laser diode radiation is demonstrated by varying the design of the waveguide cladding. The influence of the writing parameters on the waveguide properties are investigated resulting in a numerical aperture of the waveguides in the range of 0.1. This direct laser writing technique enables optical devices which could possibly replace bulky beam shaping setups with an integrated solution.

Mid-Infrared Spectroscopy Platform Based on GaAs/AlGaAs Thin-Film Waveguides and Quantum Cascade Lasers.

PubMed

Sieger, Markus; Haas, Julian; Jetter, Michael; Michler, Peter; Godejohann, Matthias; Mizaikoff, Boris

2016-03-01

The performance and versatility of GaAs/AlGaAs thin-film waveguide technology in combination with quantum cascade lasers for mid-infrared spectroscopy in comparison to conventional FTIR spectroscopy is presented. Infrared radiation is provided by a quantum cascade laser (QCL) spectrometer comprising four tunable QCLs providing a wavelength range of 5-11 μm (1925-885 cm(-1)) within a single collimated beam. Epitaxially grown GaAs slab waveguides serve as optical transducer for tailored evanescent field absorption analysis. A modular waveguide mounting accessory specifically designed for on-chip thin-film GaAs waveguides is presented serving as a flexible analytical platform in lieu of conventional attenuated total reflection (ATR) crystals uniquely facilitating macroscopic handling and alignment of such microscopic waveguide structures in real-world application scenarios.

Electro-optic studies of novel organic materials and devices

NASA Astrophysics Data System (ADS)

Xu, Jianjun

1997-11-01

Specific single crystal organic materials have high potential for use in high speed optical signal processing and various other electro-optic applications. In this project some of the most important organic crystal materials were studied regarding their detailed electro- optic properties and potential device applications. In particular, the electro-optic properties of N-(4- Nitrophenyl)-L-Prolinol (NPP) and 4'-N,N- dimethylamino-4-methylstilbazolium tosylate (DAST) both of which have extremely large second order susceptibilites were studied. The orientation of the thin film crystal with respect to the substrate surface was determined using-X-ray diffraction. The principal axes of the single crystal thin film were determined by polarization transmission microscopy. The elements of the electro-optic coefficient tensor were measured by field induced birefringence measurements. Detailed measurements for NPP thin films with different orientations of the external electric field with respect to the charge transfer axis were carried out at a wavelength of 1064nm. The wavelength dependence of the electro-optic effect for DAST single crystal thin films was measured using a Ti:Sapphire laser. Several device geometries involving organic single crystal thin film materials were studied. A new method for the fabrication of channel waveguides for organic materials was initiated. Channel waveguides for NPP and ABP were obtained using this methods. Optical modulation due to the electro-optic effect based on the organic channel waveguide for NPP single crystal was demonstrated. The electro-optic modulation using NPP single crystals thin film in a Fabry-Perot cavity was measured. A device using a optical fiber half coupler and organic electro-optic thin film material was constructed, and it has potential applications in optical signal processing.

Positioning and joining of organic single-crystalline wires

PubMed Central

Wu, Yuchen; Feng, Jiangang; Jiang, Xiangyu; Zhang, Zhen; Wang, Xuedong; Su, Bin; Jiang, Lei

2015-01-01

Organic single-crystal, one-dimensional materials can effectively carry charges and/or excitons due to their highly ordered molecule packing, minimized defects and eliminated grain boundaries. Controlling the alignment/position of organic single-crystal one-dimensional architectures would allow on-demand photon/electron transport, which is a prerequisite in waveguides and other optoelectronic applications. Here we report a guided physical vapour transport technique to control the growth, alignment and positioning of organic single-crystal wires with the guidance of pillar-structured substrates. Submicrometre-wide, hundreds of micrometres long, highly aligned, organic single-crystal wire arrays are generated. Furthermore, these organic single-crystal wires can be joined within controlled angles by varying the pillar geometries. Owing to the controllable growth of organic single-crystal one-dimensional architectures, we can present proof-of-principle demonstrations utilizing joined wires to allow optical waveguide through small radii of curvature (internal angles of ~90–120°). Our methodology may open a route to control the growth of organic single-crystal one-dimensional materials with potential applications in optoelectronics. PMID:25814032

Deepening Insights of Charge Transfer and Photophysics in a Novel Donor-Acceptor Cocrystal for Waveguide Couplers and Photonic Logic Computation.

PubMed

Zhu, Weigang; Zhu, Lingyun; Zou, Ye; Wu, Yishi; Zhen, Yonggang; Dong, Huanli; Fu, Hongbing; Wei, Zhixiang; Shi, Qiang; Hu, Wenping

2016-07-01

The charge transfer and photophysics in a new light-emitting cocrystal with ribbon-like morphology are revealed in-depth. These cocrystals can serve as an efficient 1D optical waveguide, and the cocrystal waveguide couplers fabricated by a probe-assisted crystal-moving technique exhibit interfacial white emission and can function as basic photonic logic gates, showing potential for future integrated photonics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Non-reciprocity and topology in optics: one-way road for light via surface magnon polariton.

PubMed

Ochiai, Tetsuyuki

2015-02-01

We show how non-reciprocity and topology are used to construct an optical one-way waveguide in the Voigt geometry. First, we present a traditional approach of the one-way waveguide of light using surface polaritons under a static magnetic field. Second, we explain a recent discovery of a topological approach using photonic crystals with the magneto-optical coupling. Third, we present a combination of the two approaches, toward a broadband one-way waveguide in the microwave range.

Non-reciprocity and topology in optics: one-way road for light via surface magnon polariton

PubMed Central

Ochiai, Tetsuyuki

2015-01-01

We show how non-reciprocity and topology are used to construct an optical one-way waveguide in the Voigt geometry. First, we present a traditional approach of the one-way waveguide of light using surface polaritons under a static magnetic field. Second, we explain a recent discovery of a topological approach using photonic crystals with the magneto-optical coupling. Third, we present a combination of the two approaches, toward a broadband one-way waveguide in the microwave range. PMID:27877739

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

NASA Astrophysics Data System (ADS)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices.

PubMed

Liao, P H; Peng, K P; Lin, H C; George, T; Li, P W

2018-05-18

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO 2 /SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5-95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5-4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si 1-x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si 1-x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core 'building block' required for the fabrication of Ge-based MOS devices.

MoS2 /Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.

PubMed

He, Xuexia; Chow, WaiLeong; Liu, Fucai; Tay, BengKang; Liu, Zheng

2017-01-01

2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS 2 ) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS 2 and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm 2 V -1 s -1 , respectively. The ambipolar behavior is explained based on the band alignment of MoS 2 and rubrene. Furthermore, being a building block, the MoS 2 /rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optically reconfigurable patterning for control of the propagation characteristics of a planar waveguide

NASA Astrophysics Data System (ADS)

Wang, Y.; Klittnick, A.; Clark, N. A.; Keller, P.

2008-10-01

We demonstrate an easily fabricated all-optical and freely reconfigurable method of controlling the propagating characteristics of the optic path within a planar waveguide with low insertion losses by employing the optical patterning of the refractive index of an erasable and rewriteable photosensitive liquid crystal polymer cladding layer.

Quasicrystalline structures and uses thereof

DOEpatents

Steinhardt, Paul Joseph; Chaikin, Paul Michael; Man, Weining

2013-08-13

This invention relates generally to devices constructed from quasicrystalline heterostructures. In preferred embodiments, two or more dielectric materials are arranged in a two- or three-dimensional space in a lattice pattern having at least a five-fold symmetry axis and not a six-fold symmetry axis, such that the quasicrystalline heterostructure exhibits an energy band structure in the space, the band structure having corresponding symmetry, which symmetry is forbidden in crystals, and which band structure comprises a complete band gap. The constructed devices are adapted for manipulating, controlling, modulating, trapping, reflecting and otherwise directing waves including electromagnetic, sound, spin, and surface waves, for a pre-selected range of wavelengths propagating within or through the heterostructure in multiple directions.

Cladding waveguide splitters fabricated by femtosecond laser inscription in Ti:Sapphire crystal

NASA Astrophysics Data System (ADS)

Ren, Yingying; Zhang, Limu; Xing, Hongguang; Romero, Carolina; Vázquez de Aldana, Javier R.; Chen, Feng

2018-07-01

Highly-compact devices capable of beam splitting are intriguing for a broad range of photonic applications. In this work, we report on the fabrication of optical waveguide splitters with rectangular cladding geometry in a Ti:Sapphire crystal by femtosecond laser inscription. Y-splitters are fabricated with 30 μm × 15 μm and 50 μm × 25 μm input ends, corresponding to two 15 μm × 15 μm and 25 μm × 25 μm output ends, respectively. The full branching angle θ between the two output arms are changing from 0.5° to 2°. The performances of the splitters are characterized at 632.8 nm and 1064 nm, showing very good properties including symmetrical output ends, single-mode guidance, equalized splitting ratios, all-angle-polarization light transmission and intact luminescence features in the waveguide cores. The realization of these waveguide splitters with good performances demonstrates the potential of such promising devices in complex monolithic photonic circuits and active optical devices such as miniature tunable lasers.

Augmented Photoelectrochemical Efficiency of ZnO/TiO2 Nanotube Heterostructures

NASA Astrophysics Data System (ADS)

Boda, Muzaffar Ahmad; Shah, Mohammad Ashraf

2017-11-01

ZnO/TiO2 nanotube heterostructures have been fabricated by electrodeposition of ZnO microcrystals over electrochemically anodized TiO2 nanotube arrays. The resulting ZnO/TiO2 nanotube heterostructures showed enhanced photocurrent density of 5.72 mA cm-2, about 1.5 times the value of 3.68 mA cm-2 shown by bare compact TiO2 nanotubes. This enhanced photocurrent density of the ZnO/TiO2 nanotube heterostructures is due to high electron mobility in the ZnO crystals, thereby decreasing the electron-hole recombination process, good interfacial quality between the ZnO and TiO2 structures, and a proposed smooth charge-transfer mechanism due to band bending at the interface. The morphological features of the as-prepared heterostructures were determined by field-emission scanning electron microscopy (FESEM). The crystallinity and phase purity of the samples were confirmed by x-ray diffraction (XRD) analysis. The light absorption properties of the prepared samples were investigated by ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS). The photoelectrochemical efficiency of bare and ZnO-modified TiO2 nanotube heterostructures was determined by electrochemical analyzer.

Conformal spinel/layered heterostructures of Co3O4 shells grown on single-crystal Li-rich nanoplates for high-performance lithium-ion batteries

NASA Astrophysics Data System (ADS)

Xin, Yue; Lan, Xiwei; Chang, Peng; Huang, Yaqun; Wang, Libin; Hu, Xianluo

2018-07-01

Lithium-rich layered materials have received much attention because of their high specific capacity and high energy density. Unfortunately, they suffer from irreversible capacity loss, low initial Coulombic efficiency and poor cyclability. Here we report a facile co-precipitation method to synthesize uniform single-crystal Li-rich Li[Li0.2Mn0.54Ni0.13Co0.13]O2 nanoplates without using any template. Subsequently, a Co3O4 shell is in situ grown on the Li-rich nanoplates through a hydrothermal method, leading to spinel/layered heterostructures. The electrode made of conformal heterostructured Li-rich/Co3O4 nanoplates delivers a high discharge capacity of 296 mA h g-1 at 0.1 C with an initial Coulombic efficiency of 84%. The capacity retention reaches 83.2% with a discharge capacity of 223 mA h g-1 after 160 cycles at 0.2 C during the potential window ranging from 2.0 to 4.8 V. The enhanced electrochemical performance of the resulting Li-rich/Co3O4 nanoplates benefits from the unique conformal heterostructure as well as the electrochemically active LixCoOy generated between the reaction of Co3O4 shells and the extracted Li2O during charging/discharging processes.

Precision Laser Development for Interferometric Space Missions NGO, SGO, and GRACE Follow-On

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2011-01-01

Optical fiber and semiconductor laser technologies have evolved dramatically over the last decade due to the increased demands from optical communications. We are developing a laser (master oscillator) and optical amplifier based on those technologies for interferometric space missions, including the gravitational-wave missions NGO/SGO (formerly LISA) and the climate monitoring mission GRACE Follow-On, by fully utilizing the matured wave-guided optics technologies. In space, where simpler and more reliable system is preferred, the wave-guided components are advantageous over bulk, crystal-based, free-space laser, such as NPRO (Nonplanar Ring Oscillator) and bulk-crystal amplifier.

Wafer bonded epitaxial templates for silicon heterostructures

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M [Pasadena, CA; Morral, Anna Fontcubera I [Paris, FR

2008-03-11

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Wafer bonded epitaxial templates for silicon heterostructures

NASA Technical Reports Server (NTRS)

Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

2008-01-01

A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jihwey; Soh, Yeong-Ah; Aeppli, Gabriel

2015-06-30

Thin films of topological insulators are often capped with an insulating layer since topological insulators are known to be fragile to degradation. However, capping can hinder the observation of novel transport properties of the surface states. To understand the influence of capping on the surface states, it is crucial to understand the crystal structure and the atomic arrangement at the interfaces. Here, we use x-ray diffraction to establish the crystal structure of magnetic topological insulator Cr-doped (Bi,Sb) 2Te 3 (CBST) films grown on SrTiO 3 (1 1 1) substrates with and without a Te capping layer. We find that bothmore » the film and capping layer are single crystal and that the crystal quality of the film is independent of the presence of the capping layer, but that x-rays cause sublimation of the CBST film, which is prevented by the capping layer. Our findings show that the different transport properties of capped films cannot be attributed to a lower crystal quality but to a more subtle effect such as a different electronic structure at the interface with the capping layer. Our results on the crystal structure and atomic arrangements of the topological heterostructure will enable modelling the electronic structure and design of topological heterostructures.« less

High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit.

PubMed

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei; Peng, Cheng; Robertson, Alexander D; Efetov, Dmitri K; Assefa, Solomon; Koppens, Frank H L; Hone, James; Englund, Dirk

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.

Gallium Nitride Nanowires and Heterostructures: Toward Color-Tunable and White-Light Sources.

PubMed

Kuykendall, Tevye R; Schwartzberg, Adam M; Aloni, Shaul

2015-10-14

Gallium-nitride-based light-emitting diodes have enabled the commercialization of efficient solid-state lighting devices. Nonplanar nanomaterial architectures, such as nanowires and nanowire-based heterostructures, have the potential to significantly improve the performance of light-emitting devices through defect reduction, strain relaxation, and increased junction area. In addition, relaxation of internal strain caused by indium incorporation will facilitate pushing the emission wavelength into the red. This could eliminate inefficient phosphor conversion and enable color-tunable emission or white-light emission by combining blue, green, and red sources. Utilizing the waveguiding modes of the individual nanowires will further enhance light emission, and the properties of photonic structures formed by nanowire arrays can be implemented to improve light extraction. Recent advances in synthetic methods leading to better control over GaN and InGaN nanowire synthesis are described along with new concept devices leading to efficient white-light emission. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanocrystal waveguide (NOW) laser

DOEpatents

Simpson, John T.; Simpson, Marcus L.; Withrow, Stephen P.; White, Clark W.; Jaiswal, Supriya L.

2005-02-08

A solid state laser includes an optical waveguide and a laser cavity including at least one subwavelength mirror disposed in or on the optical waveguide. A plurality of photoluminescent nanocrystals are disposed in the laser cavity. The reflective subwavelength mirror can be a pair of subwavelength resonant gratings (SWG), a pair of photonic crystal structures (PC), or a distributed feedback structure. In the case of a pair of mirrors, a PC which is substantially transmissive at an operating wavelength of the laser can be disposed in the laser cavity between the subwavelength mirrors to improve the mode structure, coherence and overall efficiency of the laser. A method for forming a solid state laser includes the steps of providing an optical waveguide, creating a laser cavity in the optical waveguide by disposing at least one subwavelength mirror on or in the waveguide, and positioning a plurality of photoluminescent nanocrystals in the laser cavity.

Low-temperature THz time domain waveguide spectrometer with butt-coupled emitter and detector crystal.

PubMed

Qiao, W; Stephan, D; Hasselbeck, M; Liang, Q; Dekorsy, T

2012-08-27

A compact high-resolution THz time-domain waveguide spectrometer that is operated inside a cryostat is demonstrated. A THz photo-Dember emitter and a ZnTe electro-optic detection crystal are directly attached to a parallel copper-plate waveguide. This allows the THz beam to be excited and detected entirely inside the cryostat, obviating the need for THz-transparent windows or external THz mirrors. Since no external bias for the emitter is required, no electric feed-through into the cryostat is necessary. Using asynchronous optical sampling, high resolution THz spectra are obtained in the frequency range from 0.2 to 2.0 THz. The THz emission from the photo-Dember emitter and the absorption spectrum of 1,2-dicyanobenzene film are measured as a function of temperature. An absorption peak around 750 GHz of 1,2-dicyanobenzene displays a blue shift with increasing temperature.

Tapered optical fiber waveguide coupling to whispering gallery modes of liquid crystal microdroplet for thermal sensing application.

PubMed

Wang, Yan; Li, Hanyang; Zhao, Liyuan; Liu, Yongjun; Liu, Shuangqiang; Yang, Jun

2017-01-23

We demonstrate efficient coupling to the optical whispering gallery modes (WGMs) of nematic liquid crystal (NLC) microdroplets immersed in an immiscible aqueous environment. An individual NLC microdroplet, confined at the tip of a microcapillary, was coupled via a tapered optical fiber waveguide positioned correctly within its vicinity. Critical coupling of the taper-microdroplet system was facilitated by adjusting the gap between the taper and the microdroplet to change the overlap of the evanescent electromagnetic fields; efficient and controlled power transfer from the taper waveguide to the NLC microdroplet is indeed possible via the proposed technique. We also found that NLC microdroplets can function as highly sensitive thermal sensors: A maximum temperature sensitivity of 267.6 pm/°C and resolution of 7.5 × 10^-2 °C were achieved in a 78-μm-diameter NLC microdroplet.

Nanoassembled dynamic optical waveguides and sensors based on zeolite L nanocontainers

NASA Astrophysics Data System (ADS)

Barroso, Álvaro; Dieckmann, Katrin; Alpmann, Christina; Buscher, Tim; Studer, Armido; Denz, Cornelia

2015-03-01

Although optical functional devices as waveguides and sensors are of utmost importance for metrology on the nano scale, the micro-and nano-assembly by optical means of functional materials to create such optical elements has yet not been considered. In the last years, an elegant strategy based on holographic optical tweezers (HOT) has been developed to design and fabricate permanent and dynamic three-dimensional micro- and nanostructures based on functional nanocontainers as building blocks. Nanocontainers that exhibit stable and ordered voids to hierarchically organize guest materials are especially attractive. Zeolite L are a type of porous micro-sized crystals which features a high number of strictly one-dimensional, parallel aligned nanochannels. They are highly interesting as building blocks of functional nano-and microsystems due to their potential as nanocontainers to accommodate various different guest molecules and to assemble them in specific configurations. For instance, based on zeolite L crystals, microscopic polarization sensors and chains of several microcrystals for hierarchical supramolecular organization have been realized. Here, we demonstrate the ability of nanocontainers in general, and zeolite L crystals in particular to represent the basic constituent of optical functional microsystems. We show that the capability of HOT to manipulate multitude of non-spherical microparticles in three dimensions can be exploited for the investigation of zeolite L nanocontainers as dynamic optical waveguides. Moreover, we implement as additional elements dye-loaded zeolite L to sense the guiding features of these novel waveguides with high spatial precision and microspheres to enhance the light coupling into the zeolite L waveguides. With this elaborated approach of using nanocontainers as tailored building blocks for functional optical systems a new era of bricking optical components in a lego-like style becomes feasible.

Design of a GaP/Si composite waveguide for CW terahertz wave generation via difference frequency mixing.

PubMed

Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka

2014-06-10

We design a GaP/Si composite waveguide to achieve efficient terahertz (THz) wave generation under collinear phase-matched difference frequency mixing (DFM) between near-infrared light sources. This waveguide structure provides a strong mode confinement of both near-infrared sources and THz wave, resulting in an efficient mode overlapping. The numerical results show that the waveguide can produce guided THz wave (5.93 THz) with a power conversion efficiency of 6.6×10(-4)  W(-1). This value is larger than previously obtained with the bulk GaP crystal: 0.5×10(-9)  W(-1) [J. Lightwave Technol.27, 3057 (2009)]. Our proposed composite waveguide can be achieved by bridging the telecom wavelength and THz frequency region.

Low-index discontinuity terahertz waveguides

NASA Astrophysics Data System (ADS)

Nagel, Michael; Marchewka, Astrid; Kurz, Heinrich

2006-10-01

A new type of dielectric THz waveguide based on recent approaches in the field of integrated optics is presented with theoretical and experimental results. Although the guiding mechanism of the low-index discontinuity (LID) THz waveguide is total internal reflection, the THz wave is predominantly confined in the virtually lossless low-index air gap within a high-index dielectric waveguide due to the continuity of electric flux density at the dielectric interface. Attenuation, dispersion and single-mode confinement properties of two LID structures are discussed and compared with other THz waveguide solutions. The new approach provides an outstanding combination of high mode confinement and low transmission losses currently not realizable with any other metal-based or photonic crystal approach. These exceptional properties might enable the breakthrough of novel integrated THz systems or endoscopy applications with sub-wavelength resolution.

Homogenization limit for a multiband effective mass model in heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morandi, O., E-mail: morandi@ipcms.unistra.fr

We study the homogenization limit of a multiband model that describes the quantum mechanical motion of an electron in a quasi-periodic crystal. In this approach, the distance among the atoms that constitute the material (lattice parameter) is considered a small quantity. Our model include the description of materials with variable chemical composition, intergrowth compounds, and heterostructures. We derive the effective multiband evolution system in the framework of the kp approach. We study the well posedness of the mathematical problem. We compare the effective mass model with the standard kp models for uniform and non-uniforms crystals. We show that in themore » limit of vanishing lattice parameter, the particle density obtained by the effective mass model, converges to the exact probability density of the particle.« less

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

PubMed Central

2014-01-01

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology. PMID:25057817

Interface formation in monolayer graphene-boron nitride heterostructures.

PubMed

Sutter, P; Cortes, R; Lahiri, J; Sutter, E

2012-09-12

The ability to control the formation of interfaces between different materials has become one of the foundations of modern materials science. With the advent of two-dimensional (2D) crystals, low-dimensional equivalents of conventional interfaces can be envisioned: line boundaries separating different materials integrated in a single 2D sheet. Graphene and hexagonal boron nitride offer an attractive system from which to build such 2D heterostructures. They are isostructural, nearly lattice-matched, and isoelectronic, yet their different band structures promise interesting functional properties arising from their integration. Here, we use a combination of in situ microscopy techniques to study the growth and interface formation of monolayer graphene-boron nitride heterostructures on ruthenium. In a sequential chemical vapor deposition process, boron nitride grows preferentially at the edges of existing monolayer graphene domains, which can be exploited for synthesizing continuous 2D membranes of graphene embedded in boron nitride. High-temperature growth leads to intermixing near the interface, similar to interfacial alloying in conventional heterostructures. Using real-time microscopy, we identify processes that eliminate this intermixing and thus pave the way to graphene-boron nitride heterostructures with atomically sharp interfaces.

Tunable two-dimensional interfacial coupling in molecular heterostructures

DOE PAGES

Xu, Beibei; Chakraborty, Himanshu; Yadav, Vivek K.; ...

2017-08-22

Two-dimensional van der Waals heterostructures are of considerable interest for the next generation nanoelectronics because of their unique interlayer coupling and optoelectronic properties. Here, we report a modified Langmuir–Blodgett method to organize twodimensional molecular charge transfer crystals into arbitrarily and vertically stacked heterostructures, consisting of bis(ethylenedithio)tetrathiafulvalene (BEDT–TTF)/C 60 and poly (3-dodecylthiophene-2,5-diyl) (P3DDT)/C 60 nanosheets. A strong and anisotropic interfacial coupling between the charge transfer pairs is demonstrated. The van der Waals heterostructures exhibit pressure dependent sensitivity with a high piezoresistance coefficient of -4.4 × 10 -6 Pa -1, and conductance and capacitance tunable by external stimuli (ferroelectric field and magneticmore » field). Density functional theory calculations confirm charge transfer between the n-orbitals of the S atoms in BEDT–TTF of the BEDT–TTF/C 60 layer and the π* orbitals of C atoms in C 60 of the P3DDT/C 60 layer contribute to the inter-complex CT. Thus, the two-dimensional molecular van der Waals heterostructures with tunable optical–electronic–magnetic coupling properties are promising for flexible electronic applications.« less

Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole

NASA Astrophysics Data System (ADS)

Si, Chen; Lin, Zuzhang; Zhou, Jian; Sun, Zhimei

2017-03-01

The discoveries of graphene and other related two-dimensional crystals have recently led to a new technology: van der Waals (vdW) heterostructures based on these atomically thin materials. Such a paradigm has been proved promising for a wide range of applications from nanoelectronics to optoelectronics and spintronics. Here, using first-principles calculations, we investigate the electronic structure and interface characteristics of a newly synthesized GaSe/graphene (GaSe/g) vdW heterostructure. We show that the intrinsic electronic properties of GaSe and graphene are both well preserved in the heterostructure, with a Schottky barrier formed at the GaSe/g interface. More interestingly, the band alignment between graphene and GaSe can be effectively modulated by tuning the interfacial distance or applying an external electric filed. This makes the Schottky barrier height (SBH) controllable, which is highly desirable in the electronic and optoelectronic devices based on vdW heterostructures. In particular, the tunability of the interface dipole and potential step is further uncovered to be the underlying mechanism that ensures this controllable tuning of SBH.

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures.

PubMed

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-04-14

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with Species, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene "painting" on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

PubMed Central

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-01-01

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene “painting” on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis. PMID:24728289

In situ catalytic growth of large-area multilayered graphene/MoS2 heterostructures

NASA Astrophysics Data System (ADS)

Fu, Wei; Du, Fei-Hu; Su, Juan; Li, Xin-Hao; Wei, Xiao; Ye, Tian-Nan; Wang, Kai-Xue; Chen, Jie-Sheng

2014-04-01

Stacking various two-dimensional atomic crystals on top of each other is a feasible approach to create unique multilayered heterostructures with desired properties. Herein for the first time, we present a controlled preparation of large-area graphene/MoS2 heterostructures via a simple heating procedure on Mo-oleate complex coated sodium sulfate under N2 atmosphere. Through a direct in situ catalytic reaction, graphene layer has been uniformly grown on the MoS2 film formed by the reaction of Mo species with S pecies, which is from the carbothermal reduction of sodium sulfate. Due to the excellent graphene ``painting'' on MoS2 atomic layers, the significantly shortened lithium ion diffusion distance and the markedly enhanced electronic conductivity, these multilayered graphene/MoS2 heterostructures exhibit high specific capacity, unprecedented rate performance and outstanding cycling stability, especially at a high current density, when used as an anode material for lithium batteries. This work provides a simple but efficient route for the controlled fabrication of large-area multilayered graphene/metal sulfide heterostructures with promising applications in battery manufacture, electronics or catalysis.

Extremely frequency-widened terahertz wave generation using Cherenkov-type radiation.

PubMed

Suizu, Koji; Koketsu, Kaoru; Shibuya, Takayuki; Tsutsui, Toshihiro; Akiba, Takuya; Kawase, Kodo

2009-04-13

Terahertz (THz) wave generation based on nonlinear frequency conversion is promising way for realizing a tunable monochromatic bright THz-wave source. Such a development of efficient and wide tunable THz-wave source depends on discovery of novel brilliant nonlinear crystal. Important factors of a nonlinear crystal for THz-wave generation are, 1. High nonlinearity and 2. Good transparency at THz frequency region. Unfortunately, many nonlinear crystals have strong absorption at THz frequency region. The fact limits efficient and wide tunable THz-wave generation. Here, we show that Cherenkov radiation with waveguide structure is an effective strategy for achieving efficient and extremely wide tunable THz-wave source. We fabricated MgO-doped lithium niobate slab waveguide with 3.8 microm of thickness and demonstrated difference frequency generation of THz-wave generation with Cherenkov phase matching. Extremely frequency-widened THz-wave generation, from 0.1 to 7.2 THz, without no structural dips successfully obtained. The tuning frequency range of waveguided Cherenkov radiation source was extremely widened compare to that of injection seeded-Terahertz Parametric Generator. The tuning range obtained in this work for THz-wave generation using lithium niobate crystal was the widest value in our knowledge. The highest THz-wave energy obtained was about 3.2 pJ, and the energy conversion efficiency was about 10(-5) %. The method can be easily applied for many conventional nonlinear crystals, results in realizing simple, reasonable, compact, high efficient and ultra broad band THz-wave sources.

Strain-engineered diffusive atomic switching in two-dimensional crystals

PubMed Central

Kalikka, Janne; Zhou, Xilin; Dilcher, Eric; Wall, Simon; Li, Ju; Simpson, Robert E.

2016-01-01

Strain engineering is an emerging route for tuning the bandgap, carrier mobility, chemical reactivity and diffusivity of materials. Here we show how strain can be used to control atomic diffusion in van der Waals heterostructures of two-dimensional (2D) crystals. We use strain to increase the diffusivity of Ge and Te atoms that are confined to 5 Å thick 2D planes within an Sb2Te3–GeTe van der Waals superlattice. The number of quintuple Sb2Te3 2D crystal layers dictates the strain in the GeTe layers and consequently its diffusive atomic disordering. By identifying four critical rules for the superlattice configuration we lay the foundation for a generalizable approach to the design of switchable van der Waals heterostructures. As Sb2Te3–GeTe is a topological insulator, we envision these rules enabling methods to control spin and topological properties of materials in reversible and energy efficient ways. PMID:27329563

Characterisation of slab waveguides, fabricated in CaF2 and Er-doped tungsten-tellurite glass by MeV energy N+ ion implantation, using spectroscopic ellipsometry and m-line spectroscopy

NASA Astrophysics Data System (ADS)

Bányász, I.; Berneschi, S.; Lohner, T.; Fried, M.; Petrik, P.; Khanh, N. Q.; Zolnai, Z.; Watterich, A.; Bettinelli, M.; Brenci, M.; Nunzi-Conti, G.; Pelli, S.; Righini, G. C.; Speghini, A.

2010-05-01

Slab waveguides were fabricated in Er-doped tungsten-tellurite glass and CaF2 crystal samples via ion implantation. Waveguides were fabricated by implantation of MeV energy N+ ions at the Van de Graaff accelerator of the Research Institute for Particle and Nuclear Physics, Budapest, Hungary. Part of the samples was annealed. Implantations were carried out at energies of 1.5 MeV (tungsten-tellurite glass) and 3.5 MeV (CaF2). The implanted doses were between 5 x 1012 and 8 x 1016 ions/cm2. Refractive index profile of the waveguides was measured using SOPRA ES4G and Woollam M-2000DI spectroscopic ellipsometers at the Research Institute for Technical Physics and Materials Science, Budapest. Functionality of the waveguides was tested using a home-made instrument (COMPASSO), based on m-line spectroscopy and prism coupling technique, which was developed at the Materials and Photonics Devices Laboratory (MDF Lab.) of the Institute of Applied Physics in Sesto Fiorentino, Italy. Results of both types of measurements were compared to depth distributions of nuclear damage in the samples, calculated by SRIM 2007 code. Thicknesses of the guiding layer and of the implanted barrier obtained by spectroscopic ellipsometry correspond well to SRIM simulations. Irradiationinduced refractive index modulation saturated around a dose of 8 x 1016 ions/cm2 in tungsten-tellurite glass. Annealing of the implanted waveguides resulted in a reduction of the propagation loss, but also reduced the number of supported guiding modes at the lower doses. We report on the first working waveguides fabricated in an alkali earth halide crystal implanted by MeV energy medium-mass ions.

Efficient channel-waveguide laser in Nd:GGG at 1.062 μm wavelength

NASA Astrophysics Data System (ADS)

Gerhardt, R.; Kleine-Börger, J.; Beilschmidt, L.; Frommeyer, M.; Dötsch, H.; Gather, B.

1999-08-01

Channel waveguide lasers in crystals of neodymium-doped gadolinium-gallium-garnet are realized. They are based on single-mode rib waveguides prepared by liquid phase epitaxy. By this growth technique the incorporation of certain impurities, which may cause severe quenching, is inevitable. The dominant quenching process could be identified and eliminated. Channel waveguides with extremely low losses, down to 0.25 dB/cm for both TE and TM modes, are fabricated by ion-beam etching. As a result, low thresholds of 5 mW and high slope efficiencies of 48% at the laser wavelength of 1.062 μm could be achieved when pumping at a wavelength of 807 nm.

Power scaling of ultrafast laser inscribed waveguide lasers in chromium and iron doped zinc selenide.

PubMed

McDaniel, Sean A; Lancaster, Adam; Evans, Jonathan W; Kar, Ajoy K; Cook, Gary

2016-02-22

We report demonstration of Watt level waveguide lasers fabricated using Ultrafast Laser Inscription (ULI). The waveguides were fabricated in bulk chromium and iron doped zinc selenide crystals with a chirped pulse Yb fiber laser. The depressed cladding structure in Fe:ZnSe produced output powers of 1 W with a threshold of 50 mW and a slope efficiency of 58%, while a similar structure produced 5.1 W of output in Cr:ZnSe with a laser threshold of 350 mW and a slope efficiency of 41%. These results represent the current state-of-the-art for ULI waveguides in zinc based chalcogenides.

Tailored Assembly of 2D Heterostructures beyond Graphene

DTIC Science & Technology

2017-05-11

liquid crystal and catalyst application. Another important approach we have explored during this project is the solution phase assembly of two...graphene oxide, and its potential functionalities in liquid crystal and catalyst application. Another important approach we have explored during...exfoliation, liquid phase exfoliation, and chemical vapor deposition, and opened up new opportunities to graphene based platform for novel

An efficient self-collimating photonic crystal coupling technique in the RF regime

NASA Astrophysics Data System (ADS)

Sabas, Jerico N.; Mirza, Iftekhar O.; Shi, Shouyuan; Prather, Dennis W.

2010-02-01

In this paper, we present both numerical and experimental results for the waveguiding of light using a low-index-contrast (LIC) self-collimating photonic crystal (SCPhC) in the RF frequency regime. This waveguiding structure utilizes the unique interactions of light with the periodic structure of the photonic crystal (PhC) to propagate a beam of light without divergence. This design also employs materials with a low index contrast (LIC), which reduces the electromagnetic signature of the PhC. This SCPhC was designed by extracting its dispersion contours and numerically simulating it using HFSS, a commercial 3-D, full-wave FEM software. In particular, we addressed the issue of coupling the PhC to a coaxial medium by designing an input/output (I/O) coupler consisting of a coaxial-to-waveguide transition, a rectangular waveguide and a tapered dielectric transition. We fabricated the SCPhC with a rigid polyurethane foam slab and Rexolite polystyrene rods using an automated CNC router to drill the periodic lattice in the slab. We also fabricated the dielectric segments of the I/O couplers with Rexolite slabs using an automated milling machine. Using these I/O couplers and SCPhC slab, we simulated and subsequently measured experimentally an insertion loss, for the entire system, of -3.3 dB through a 24" PhC slab, and a coupling loss of -0.95 dB at each coupler-PhC interface.

Liquid crystal waveguides: new devices enabled by >1000 waves of optical phase control

NASA Astrophysics Data System (ADS)

Davis, Scott R.; Farca, George; Rommel, Scott D.; Johnson, Seth; Anderson, Michael H.

2010-02-01

A new electro-optic waveguide platform, which provides unprecedented voltage control over optical phase delays (> 2mm), with very low loss (< 0.5 dB/cm) and rapid response time (sub millisecond), will be presented. This technology, developed by Vescent Photonics, is based upon a unique liquid-crystal waveguide geometry, which exploits the tremendous electro-optic response of liquid crystals while circumventing their historic limitations. The waveguide geometry provides nematic relaxation speeds in the 10's of microseconds and LC scattering losses that are reduced by orders of magnitude from bulk transmissive LC optics. The exceedingly large optical phase delays accessible with this technology enable the design and construction of a new class of previously unrealizable photonic devices. Examples include: 2-D analog non-mechanical beamsteerers, chip-scale widely tunable lasers, chip-scale Fourier transform spectrometer (< 5 nm resolution demonstrated), widely tunable micro-ring resonators, tunable lenses, ultra-low power (< 5 microWatts) optical switches, true optical time delay devices for phased array antennas, and many more. All of these devices may benefit from established manufacturing technologies and ultimately may be as inexpensive as a calculator display. Furthermore, this new integrated photonic architecture has applications in a wide array of commercial and defense markets including: remote sensing, micro-LADAR, OCT, FSO, laser illumination, phased array radar, etc. Performance attributes of several example devices and application data will be presented. In particular, we will present a non-mechanical beamsteerer that steers light in both the horizontal and vertical dimensions.

Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator.

PubMed

Shambat, Gary; Ellis, Bryan; Mayer, Marie A; Majumdar, Arka; Haller, Eugene E; Vučković, Jelena

2011-04-11

We demonstrate a gallium arsenide photonic crystal cavity injection-based electro-optic modulator coupled to a fiber taper waveguide. The fiber taper serves as a convenient and tunable waveguide for cavity coupling with minimal loss. Localized electrical injection of carriers into the cavity region via a laterally doped p-i-n diode combined with the small mode volume of the cavity enable ultra-low energy modulation at sub-fJ/bit levels. Speeds of up to 1 GHz are demonstrated with photoluminescence lifetime measurements revealing that the ultimate limit goes well into the tens of GHz. © 2011 Optical Society of America

Off-axis spectral beam combining of Bragg reflection waveguide photonic crystal diode lasers

NASA Astrophysics Data System (ADS)

Sun, Fangyuan; Wang, Lijie; Zhao, Yufei; Hou, Guanyu; Shu, Shili; Zhang, Jun; Peng, Hangyu; Tian, Sicong; Tong, Cunzhu; Wang, Lijun

2018-06-01

The spectral beam combining (SBC) of Bragg reflection waveguide photonic crystal (BRW-PC) diode lasers was studied for the first time. An off-axis feedback system was constructed using a stripe mirror and a spatial filter to control beam quality in the external cavity. It was found that the BRW-PC diode lasers with a low divergence and a circular beam provided a simplified and cost-effective SBC. The off-axis feedback broke the beam quality limit of a single element, and an M 2 factor of 3.8 times lower than that of a single emitter in the slow axis was demonstrated.

Precision Laser Development for Gravitational Wave Space Mission

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2011-01-01

Optical fiber and semiconductor laser technologies have evolved dramatically over the last decade due to the increased demands from optical communications. We are developing a laser (master oscillator) and optical amplifier based on those technologies for interferometric space missions, such as the gravitational-wave mission LISA, and GRACE follow-on, by fully utilizing the mature wave-guided optics technologies. In space, where a simple and reliable system is preferred, the wave-guided components are advantageous over bulk, crystal-based, free-space laser, such as NPRO (Non-planar Ring Oscillator) and bulk-crystal amplifier, which are widely used for sensitive laser applications on the ground.

Refractive waveguide non-mechanical beam steering (NMBS) in the MWIR

NASA Astrophysics Data System (ADS)

Myers, Jason D.; Frantz, Jesse A.; Spillmann, Christopher M.; Bekele, Robel Y.; Kolacz, Jakub; Gotjen, Henry; Naciri, Jawad; Shaw, Brandon; Sanghera, Jas S.

2018-02-01

Beam steering is a crucial technology for a number of applications, including chemical sensing/mapping and light detection and ranging (LIDAR). Traditional beam steering approaches rely on mechanical movement, such as the realignment of mirrors in gimbal mounts. The mechanical approach to steering has several drawbacks, including large size, weight and power usage (SWAP), and frequent mechanical failures. Recently, alternative non-mechanical approaches have been proposed and developed, but these technologies do not meet the demanding requirements for many beam steering applications. Here, we highlight the development efforts into a particular non-mechanical beam steering (NMBS) approach, refractive waveguides, for application in the MWIR. These waveguides are based on an Ulrich-coupled slab waveguide with a liquid crystal (LC) top cladding; by selectively applying an electric field across the liquid crystal through a prismatic electrode, steering is achieved by creating refraction at prismatic interfaces as light propagates through the device. For applications in the MWIR, we describe a versatile waveguide architecture based on chalcogenide glasses that have a wide range of refractive indices, transmission windows, and dispersion properties. We have further developed robust shadow-masking methods to taper the subcladding layers in the coupling region. We have demonstrated devices with >10° of steering in the MWIR and a number of advantageous properties for beam steering applications, including low-power operation, compact size, and fast point-to-point steering.

Flat-Band Slow Light in a Photonic Crystal Slab Waveguide by Vertical Geometry Adjustment and Selective Infiltration of Optofluidics

NASA Astrophysics Data System (ADS)

Mansouri-Birjandi, Mohammad Ali; Janfaza, Morteza; Tavousi, Alireza

2017-11-01

In this paper, a photonic crystal slab waveguide (PhCSW) for slow light applications is presented. To obtain widest possible flat-bands of slow light regions—regions with large group index ( n g), and very low group velocity dispersion (GVD)—two core parameters of PhCSW structure are investigated. The design procedure is based on vertical shifting of the first row of the air holes adjacent to the waveguide center and concurrent selective optofluidic infiltration of the second row. The criteria of < n_g > ± 10% variations is used for ease of definition and comparison of flat-band regions. By applying various geometry optimizations for the first row, our results suggest that a waveguide core of W 1.09 would provide a reasonable wide flat-band. Furthermore, infiltration of optofluidics in the second row alongside with geometry adjustments of the first row result in flexible control of 10 < n g < 32 and provide flat-band regions with large bandwidth (10 nm < Δ λ < 21.5 nm). Also, negligible GVD as low as β 2 = 10-24 (s2/m) is achieved. Numerical simulations are calculated by means of the three-dimensional plane wave expansion method.

Compact optical switch based on 2D photonic crystal and magneto-optical cavity.

PubMed

Dmitriev, Victor; Kawakatsu, Marcelo N; Portela, Gianni

2013-04-01

A compact optical switch based on a 2D photonic crystal (PhC) and a magneto-optical cavity is suggested and analyzed. The cavity is coupled to two parallel and misaligned PC waveguides and operates with dipole mode. When the cavity is nonmagnetized, the dipole mode excited by a signal in the input waveguide has a node in the output waveguide. Therefore, the input signal is reflected from the cavity. This corresponds to the state off of the switch. Normal to the plane of the PhC magnetization by a dc magnetic field produces a rotation of the dipole pattern in the cavity providing equal amplitudes of the electromagnetic fields in the input and the output waveguides. This corresponds to the state on with high transmission of the input signal. Numerical calculations show that at the 1.55 μm wavelength the device has the insertion loss -0.42 dB in the on state, the isolation -19 dB in the off state and the switch off and on ratio P(on)/P(off) about 72. The frequency band at the level of -15 dB of the resonance curve in off state is about 160 GHz.

Inverse design of high-Q wave filters in two-dimensional phononic crystals by topology optimization.

PubMed

Dong, Hao-Wen; Wang, Yue-Sheng; Zhang, Chuanzeng

2017-04-01

Topology optimization of a waveguide-cavity structure in phononic crystals for designing narrow band filters under the given operating frequencies is presented in this paper. We show that it is possible to obtain an ultra-high-Q filter by only optimizing the cavity topology without introducing any other coupling medium. The optimized cavity with highly symmetric resonance can be utilized as the multi-channel filter, raising filter and T-splitter. In addition, most optimized high-Q filters have the Fano resonances near the resonant frequencies. Furthermore, our filter optimization based on the waveguide and cavity, and our simple illustration of a computational approach to wave control in phononic crystals can be extended and applied to design other acoustic devices or even opto-mechanical devices. Copyright © 2016 Elsevier B.V. All rights reserved.

Multicolor photonic crystal laser array

DOEpatents

Wright, Jeremy B; Brener, Igal; Subramania, Ganapathi S; Wang, George T; Li, Qiming

2015-04-28

A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting photonic crystal lasers comprising broad gain-bandwidth III-nitride multiple quantum well axial heterostructures were fabricated using a novel top-down nanowire fabrication method. Single-mode lasing was obtained in the blue-violet spectral region with 60 nm of tuning (or 16% of the nominal center wavelength) that was determined purely by the photonic crystal geometry. This approach can be extended to cover the entire visible spectrum.

2D Crystal heterostructures properties and growth by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Xing, Grace Huili

Two-dimensional (2D) crystals such as transition metal dichalcogenides (TMDs) along with other families of layered materials including graphene, SnSe2, GaSe, BN etc, has attracted intense attention from the scientific community. One monolayer of such materials represent the thinnest ``quantum wells''. These layered materials typically possess an in-plane hexagonal crystal structure, and can be stacked together by interlayer van der Waals interactions. Therefore, it is possible to create novel heterostructures by stacking materials with large lattice mismatches and different properties, for instance, superconductors (NbSe2) , metals, semi-metals (graphene), semiconductors (MoS2) and insulators (BN). Numerous novel material properties and device concepts have been discovered, proposed and demonstrated lately. However, the low internal photoluminescence efficiency (IPE, <1%) and low carrier mobility observed in the 2D semiconductors suggest strongly that the materials under investigation today most likely suffer from a high concentration of defects. In this talk, I will share our progress and the challenges we face in terms of preparing, characterizing these 2D crystals as well as pursuing their applications. This work has been supported in part by NSF, AFOSR and LEAST, one of the STARnet centers.

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shinde, Sachin M.; Tanemura, Masaki; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material asmore » well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.« less

Generalized Ellipsometry on Complex Nanostructures and Low-Symmetry Materials

NASA Astrophysics Data System (ADS)

Mock, Alyssa Lynn

In this thesis, complex anisotropic materials are investigated and characterized by generalized ellipsometry. In recent years, anisotropic materials have gained considerable interest for novel applications in electronic and optoelectronic devices, mostly due to unique properties that originate from reduced crystal symmetry. Examples include white solid-state lighting devices which have become ubiquitous just recently, and the emergence of high-power, high-voltage electronic transistors and switches in all-electric vehicles. The incorporation of single crystalline material with low crystal symmetry into novel device structures requires reconsideration of existing optical characterization approaches. Here, the generalized ellipsometry concept is extended to include applications for materials with monoclinic and triclinic symmetries. A model eigendielectric displacement vector approach is developed, described and utilized to characterize monoclinic materials. Materials are investigated in spectral regions spanning from the far-infrared to the vacuum ultraviolet. Examples are demonstrated for phonon mode determination in cadmium tungstate and yttrium silicate and for band-to-band transitions in gallia (beta-Ga2O3) single crystals. Furthermore, the anisotropic optical properties of an emerging class of spatially coherent heterostructure materials with nanostructure dimensions are investigated. The so-called anisotropic effective medium approximation for slanted columnar thin films is extended to the concept of slanted columnar heterostructure thin films as well as core-shell heterostructure thin films. Examples include the determination of band-to-band transitions, phonon modes and oxidation properties of cobalt-oxide core shell structures and gas-liquid-solid distribution during controlled adsorption of organic solvents in silicon slanted columnar thin films.

High T c layered ferrielectric crystals by coherent spinodal decomposition

DOE PAGES

Susner, Michael A.; Belianinov, Alex; Borisevich, Albina Y.; ...

2015-11-13

Research in the rapidly-developing field of 2D-electronic materials has thus far been focused on metallic and semiconducting materials. However, complementary dielectric materials such as non-linear dielectrics are needed to enable realistic device architectures. Candidate materials require tunable dielectric properties and pathways for heterostructure assembly. Here we report on a family of cation-deficient transition metal thiophosphates whose unique chemistry makes them a viable prospect for these applications. In these materials, naturally occurring ferrielectric heterostructures composed of centrosymmetric In 4/3P 2S 6 and ferrielectrically-active CuInP 2S 6 are realized by controllable chemical phase separation in van-der-Waals bonded single crystals. CuInP 2S 6more » by itself is a layered ferrielectric with Tc just over room-temperature which rapidly decreases with homogenous doping. Surprisingly, in our composite materials, the ferrielectric Tc of the polar CuInP 2S 6 phase increases. This effect is enabled by unique spinodal decomposition that retains the overall van-der-Waals layered morphology of the crystal, but chemically separates CuInP 2S 6 and In 4/3P 2S 6 within each layer. The average spatial periodicity of the distinct chemical phases can be finely controlled by altering the composition and/or synthesis conditions. One intriguing prospect for such layered spinodal alloys is large volume synthesis of 2D in-plane heterostructures with periodically alternating polar and non-polar phases.« less

Surface acoustic waves in acoustic superlattice lithium niobate coated with a waveguide layer

NASA Astrophysics Data System (ADS)

Yang, G. Y.; Du, J. K.; Huang, B.; Jin, Y. A.; Xu, M. H.

2017-04-01

The effects of the waveguide layer on the band structure of Rayleigh waves are studied in this work based on a one-dimensional acoustic superlattice lithium niobate substrate coated with a waveguide layer. The present phononic structure is formed by the periodic domain-inverted single crystal that is the Z-cut lithium niobate substrate with a waveguide layer on the upper surface. The plane wave expansion method (PWE) is adopted to determine the band gap behavior of the phononic structure and validated by the finite element method (FEM). The FEM is also used to investigate the transmission of Rayleigh waves in the phononic structure with the interdigital transducers by means of the commercial package COMSOL. The results show that, although there is a homogeneous waveguide layer on the surface, the band gap of Rayleigh waves still exist. It is also found that increasing the thickness of the waveguide layer, the band width narrows and the band structure shifts to lower frequency. The present approach can be taken as an efficient tool in designing of phononic structures with waveguide layer.

Efficient computation of photonic crystal waveguide modes with dispersive material.

PubMed

Schmidt, Kersten; Kappeler, Roman

2010-03-29

The optimization of PhC waveguides is a key issue for successfully designing PhC devices. Since this design task is computationally expensive, efficient methods are demanded. The available codes for computing photonic bands are also applied to PhC waveguides. They are reliable but not very efficient, which is even more pronounced for dispersive material. We present a method based on higher order finite elements with curved cells, which allows to solve for the band structure taking directly into account the dispersiveness of the materials. This is accomplished by reformulating the wave equations as a linear eigenproblem in the complex wave-vectors k. For this method, we demonstrate the high efficiency for the computation of guided PhC waveguide modes by a convergence analysis.

Franckeite as a naturally occurring van der Waals heterostructure

PubMed Central

Molina-Mendoza, Aday J.; Giovanelli, Emerson; Paz, Wendel S.; Niño, Miguel Angel; Island, Joshua O.; Evangeli, Charalambos; Aballe, Lucía; Foerster, Michael; van der Zant, Herre S. J.; Rubio-Bollinger, Gabino; Agraït, Nicolás; Palacios, J. J.; Pérez, Emilio M.; Castellanos-Gomez, Andres

2017-01-01

The fabrication of van der Waals heterostructures, artificial materials assembled by individual stacking of 2D layers, is among the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods, which are cumbersome and tend to suffer from poor control over the lattice orientations and the presence of unwanted interlayer adsorbates. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors. PMID:28194037

Photoinduced doping in heterostructures of graphene and boron nitride.

PubMed

Ju, L; Velasco, J; Huang, E; Kahn, S; Nosiglia, C; Tsai, Hsin-Zon; Yang, W; Taniguchi, T; Watanabe, K; Zhang, Y; Zhang, G; Crommie, M; Zettl, A; Wang, F

2014-05-01

The design of stacks of layered materials in which adjacent layers interact by van der Waals forces has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties as well as the emergence of novel physical phenomena and device functionality. Here, we report photoinduced doping in van der Waals heterostructures consisting of graphene and boron nitride layers. It enables flexible and repeatable writing and erasing of charge doping in graphene with visible light. We demonstrate that this photoinduced doping maintains the high carrier mobility of the graphene/boron nitride heterostructure, thus resembling the modulation doping technique used in semiconductor heterojunctions, and can be used to generate spatially varying doping profiles such as p-n junctions. We show that this photoinduced doping arises from microscopically coupled optical and electrical responses of graphene/boron nitride heterostructures, including optical excitation of defect transitions in boron nitride, electrical transport in graphene, and charge transfer between boron nitride and graphene.

Silicon waveguided components for the long-wave infrared region

NASA Astrophysics Data System (ADS)

Soref, Richard A.; Emelett, Stephen J.; Buchwald, Walter R.

2006-10-01

We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated circuits can be extended beyond the 1.55 µm telecom range into the wide infrared from 1.55 to 100 µm. The Si rib-membrane waveguide offers low-loss transmission from 1.2 to 6 µm and from 24 to 100 µm. This waveguide, which is compatible with Si microelectronics manufacturing, is constructed from silicon-on-insulator by etching away the oxide locally beneath the rib. Alternatively, low-loss waveguiding from 1.9 to 14.7 µm is assured by employing a crystal Ge rib grown directly upon the Si substrate. The Si-based hollow-core waveguide is an excellent device that minimizes loss due to silicon's 6-24 µm multi-phonon absorption. Here the rectangular air-filled core is surrounded by SiGe/Si multi-layer anti-resonant or Bragg claddings. The hollow channel offers less than 1.7 dB cm-1 loss from 1.2 to 100 µm. .

Design of a hybrid As₂S₃-Ti:LiNbO₃ optical waveguide for phase-matched difference frequency generation at mid-infrared.

PubMed

Wang, Xin; Madsen, Christi K

2014-11-03

Based on arsenic tri-sulfide films on titanium-diffused lithium niobate, we designed a hybrid optical waveguide for efficient mid-infrared emission by phase-matched difference frequency generation (DFG). The hybrid waveguide structure possesses a low-index magnesium fluoride buffer layer sandwiched between two high-index As(2)S(3) slabs, so that pump and signal waves are tightly confined by titanium-diffused waveguide while the DFG output idler wave at mid-infrared is confined by the whole hybrid waveguide structure. On a 1 mm-long hybrid waveguide pumped at 50 mW powers, a normalized power conversion efficiency of 20.52%W(-1)cm(-2) was theoretically predicted, which is the highest record for mid-infrared DFG waveguides based on lithium niobate crystal, to the best of our knowledge. Using a tunable near-infrared pump laser at 1.38-1.47 µm or a tunable signal laser at 1.95-2.15 µm, a broad mid-infrared tuning range from 4.0 µm to 4.9 µm can be achieved. Such hybrid optical waveguides are feasible for mid-infrared emission with mW powers and sub-nanometer linewidths.

Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby

DOEpatents

Atwater, Jr., Harry A.; Zahler, James M.

2006-11-28

Ge/Si and other nonsilicon film heterostructures are formed by hydrogen-induced exfoliation of the Ge film which is wafer bonded to a cheaper substrate, such as Si. A thin, single-crystal layer of Ge is transferred to Si substrate. The bond at the interface of the Ge/Si heterostructures is covalent to ensure good thermal contact, mechanical strength, and to enable the formation of an ohmic contact between the Si substrate and Ge layers. To accomplish this type of bond, hydrophobic wafer bonding is used, because as the invention demonstrates the hydrogen-surface-terminating species that facilitate van der Waals bonding evolves at temperatures above 600.degree. C. into covalent bonding in hydrophobically bound Ge/Si layer transferred systems.

Non-degenerate two-photon absorption in silicon waveguides. Analytical and experimental study

DOE PAGES

Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; ...

2015-06-22

We theoretically and experimentally investigate the nonlinear evolution of two optical pulses in a silicon waveguide. We provide an analytic solution for the weak probe wave undergoing non-degenerate two-photon absorption (TPA) from the strong pump. At larger pump intensities, we employ a numerical solution to study the interplay between TPA and photo-generated free carriers. We develop a simple and powerful approach to extract and separate out the distinct loss contributions of TPA and free-carrier absorption from readily available experimental data. Our analysis accounts accurately for experimental results in silicon photonic crystal waveguides.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Keyu; Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Shenzhen 518067; College of Electronic Science and Technology, Shenzhen University, Shenzhen 518067

We present a versatile add-drop integrated photonic filter (ADF) consisting of nonreciprocal waveguides in which the propagation of light is restricted in one predetermined direction. With the bus and add/drop waveguides symmetrically coupled through a cavity, the four-port device allows each individual port to add and/or drop a signal of the same frequency. The scheme is general and we demonstrate the nonreciprocal ADF with magneto-optical photonic crystals. The filter is immune to waveguide defects, allowing straightforward implementation of multi-channel ADFs by cascading the four-port designs. The results should find applications in wavelength-division multiplexing and related integrated photonic techniques.

Sensitive spin detection using an on-chip SQUID-waveguide resonator

NASA Astrophysics Data System (ADS)

Yue, G.; Chen, L.; Barreda, J.; Bevara, V.; Hu, L.; Wu, L.; Wang, Z.; Andrei, P.; Bertaina, S.; Chiorescu, I.

2017-11-01

Precise detection of spin resonance is of paramount importance to achieve coherent spin control in quantum computing. We present a setup for spin resonance measurements, which uses a dc-SQUID flux detector coupled to an antenna from a coplanar waveguide. The SQUID and the waveguide are fabricated from a 20 nm Nb thin film, allowing high magnetic field operation with the field applied parallel to the chip. We observe a resonance signal between the first and third excited states of Gd spins S = 7/2 in a CaWO4 crystal, relevant for state control in multi-level systems.

Magneto-optical non-reciprocal devices in silicon photonics

PubMed Central

Shoji, Yuya; Mizumoto, Tetsuya

2014-01-01

Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm. PMID:27877640

On-chip photonic-phononic emitter-receiver apparatus

DOEpatents

Cox, Jonathan Albert; Jarecki, Jr., Robert L.; Rakich, Peter Thomas; Wang, Zheng; Shin, Heedeuk; Siddiqui, Aleem; Starbuck, Andrew Lea

2017-07-04

A radio-frequency photonic devices employs photon-phonon coupling for information transfer. The device includes a membrane in which a two-dimensionally periodic phononic crystal (PnC) structure is patterned. The device also includes at least a first optical waveguide embedded in the membrane. At least a first line-defect region interrupts the PnC structure. The first optical waveguide is embedded within the line-defect region.

Highly Compact Circulators in Square-Lattice Photonic Crystal Waveguides

PubMed Central

Jin, Xin; Ouyang, Zhengbiao; Wang, Qiong; Lin, Mi; Wen, Guohua; Wang, Jingjing

2014-01-01

We propose, demonstrate and investigate highly compact circulators with ultra-low insertion loss in square-lattice- square-rod-photonic-crystal waveguides. Only a single magneto- optical square rod is required to be inserted into the cross center of waveguides, making the structure very compact and ultra efficient. The square rods around the center defect rod are replaced by several right-angled-triangle rods, reducing the insertion loss further and promoting the isolations as well. By choosing a linear-dispersion region and considering the mode patterns in the square magneto-optical rod, the operating mechanism of the circulator is analyzed. By applying the finite-element method together with the Nelder-Mead optimization method, an extremely low insertion loss of 0.02 dB for the transmitted wave and ultra high isolation of 46 dB∼48 dB for the isolated port are obtained. The idea presented can be applied to build circulators in different wavebands, e.g., microwave or Tera-Hertz. PMID:25415417

Highly compact circulators in square-lattice photonic crystal waveguides.

PubMed

Jin, Xin; Ouyang, Zhengbiao; Wang, Qiong; Lin, Mi; Wen, Guohua; Wang, Jingjing

2014-01-01

We propose, demonstrate and investigate highly compact circulators with ultra-low insertion loss in square-lattice- square-rod-photonic-crystal waveguides. Only a single magneto- optical square rod is required to be inserted into the cross center of waveguides, making the structure very compact and ultra efficient. The square rods around the center defect rod are replaced by several right-angled-triangle rods, reducing the insertion loss further and promoting the isolations as well. By choosing a linear-dispersion region and considering the mode patterns in the square magneto-optical rod, the operating mechanism of the circulator is analyzed. By applying the finite-element method together with the Nelder-Mead optimization method, an extremely low insertion loss of 0.02 dB for the transmitted wave and ultra high isolation of 46 dB∼48 dB for the isolated port are obtained. The idea presented can be applied to build circulators in different wavebands, e.g., microwave or Tera-Hertz.

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes.

PubMed

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R; Castillo, Gabriel R; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-08-07

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips.

Adiabatic wavelength redshift by dynamic carrier depletion using p -i -n -diode-loaded photonic crystal waveguides

NASA Astrophysics Data System (ADS)

Kondo, K.; Baba, T.

2018-03-01

We demonstrate an adiabatic wavelength redshift using dynamic carrier depletion. Free carriers are first induced through two-photon absorption of a control pulse and then extracted by a reverse-biased p-i-n diode formed on a Si photonic crystal waveguide, resulting in rapid carrier depletion. A copropagating signal pulse is redshifted by the consequent increase in refractive index. We experimentally evaluated the dynamics of the carrier depletion by the pump-probe method and explored suitable conditions for adiabatic redshift. The signal's redshift was observed, and was confirmed to originate in the dynamic carrier depletion. The redshift was experimentally determined as 0.21 nm.

Nonlinear waveguide optics and photonic crystal fibers.

PubMed

Knight, J C; Skryabin, D V

2007-11-12

Focus Serial: Frontiers of Nonlinear Optics

Gordon Research Conference on Crystal Growth (1990)

DTIC Science & Technology

1990-04-01

Labs, MH) 14. Cox Vapor Levitation Epitaxy of Quantum Wires and Wire-like Structures Using Laterally Propagating Surface Steps. (Bellcore, Red Bank) 15...introduced many new aspects of crystal growth, including strained layer superlattices, quantum cluster growth, and vertical zone melting of GaAs...Films 2. E. Bauser Semiconductor Liquid Phase Epitaxy: Growth and Properties of Layers and Heterostructures 3. M. L. Steigerwald Growth of Quantum

Asymmetric light transmission based on coupling between photonic crystal waveguides and L1/L3 cavity

NASA Astrophysics Data System (ADS)

Zhang, Jinqiannan; Chai, Hongyu; Yu, Zhongyuan; Cheng, Xiang; Ye, Han; Liu, Yumin

2017-09-01

A compact design of all-optical diode with mode conversion function based on a two-dimensional photonic crystal waveguide and an L1 or L3 cavity is theoretically investigated. The proposed photonic crystal structures comprise a triangular arrangement of air holes embedded in a silicon substrate. Asymmetric light propagation is achieved via the spatial mode match/mismatch in the coupling region. The simulations show that at each cavity's resonance frequency, the transmission efficiency of the structure with the L1 and L3 cavities reach 79% and 73%, while the corresponding unidirectionalities are 46 and 37 dB, respectively. The functional frequency can be controlled by simply adjusting the radii of specific air holes in the L1 and L3 cavities. The proposed structure can be used as a frequency filter, a beam splitter and has potential applications in all-optical integrated circuits.

Strong Nonvolatile Magnon-Driven Magnetoelectric Coupling in Single-Crystal Co /[PbMg1/3Nb2/3O3] 0.71[PbTiO3]0.29 Heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Cai; Shen, Lvkang; Liu, Ming; Gao, Cunxu; Jia, Chenglong; Jiang, Changjun

2018-01-01

The ability to manipulate the magnetism on interfacing ferromagnetic and ferroelectric materials via electric fields to achieve an emergent multiferroic response has enormous potential for nanoscale devices with novel functionalities. Herein, a strong electric-field control of the magnetism modulation is reported for a single-crystal Co (14 nm )/(001 )Pb (Mg1/3Nb2/3) 0.7Ti0.3O3 (PMN-PT) heterostructure by fabricating an epitaxial Co layer on a PMN-PT substrate. Electric-field-tuned ferromagnetic resonance exhibits a large resonance field shift, with a 120-Oe difference between that under positive and negative remanent polarizations, which demonstrates nonvolatile electric-field control of the magnetism. Further, considering the complexity of the twofold symmetry magnetic anisotropy, the linear change of the fourfold symmetry magnetic anisotropy, relating to the single-crystal cubic magnetocrystal anisotropy of the Co thin film, is resolved and quantified to exert a magnon-driven, strong direct magnetoelectric effect on the Co /PMN -PT interface. These results are promising for future multiferroic devices.

A general strategy to fabricate photonic crystal heterostructure with Programmed photonic stopband.

PubMed

Zhang, Lijing; Liu, Bofan; Wang, Jie; Tao, Shengyang; Yan, Qingfeng

2018-01-01

In this paper, we present a general fabrication strategy to achieve the structure control and the flexible photonic stop band regulation of (2+1) D photonic crystal heterostructures (PCHs) by layer-by-layer depositing the annealed colloidal crystal monolayers of different sphere size. The optical properties of the resulting (2+1) DPCHs with different lattice constants were systematically studied and a universal photonic stopband variation rule was proposed, which makes it possible to program any kind of stopband structure as required, such as dual- or multi-stopbands PCH and ultra-wide stopband PCH. Furthermore, PCH with dual-stopbands overlapping the excitation wavelength (E) and emission wavelength(F) of Ru complex was fabricated by finely manipulating the spheres' diameter of colloidal monolayers. And an additional 2-fold fluorescence enhancement in comparison to that on the single stopband sample was achieved. This strategy affords new opportunities for delicate engineering the photonic behaviour of PCH, and also is of great significance for the practical application based on their bandgap property. Copyright © 2017 Elsevier Inc. All rights reserved.

Nonlinear coupled mode approach for modeling counterpropagating solitons in the presence of disorder-induced multiple scattering in photonic crystal waveguides

NASA Astrophysics Data System (ADS)

Mann, Nishan; Hughes, Stephen

2018-02-01

We present the analytical and numerical details behind our recently published article [Phys. Rev. Lett. 118, 253901 (2017), 10.1103/PhysRevLett.118.253901], describing the impact of disorder-induced multiple scattering on counterpropagating solitons in photonic crystal waveguides. Unlike current nonlinear approaches using the coupled mode formalism, we account for the effects of intraunit cell multiple scattering. To solve the resulting system of coupled semilinear partial differential equations, we introduce a modified Crank-Nicolson-type norm-preserving implicit finite difference scheme inspired by the transfer matrix method. We provide estimates of the numerical dispersion characteristics of our scheme so that optimal step sizes can be chosen to either minimize numerical dispersion or to mimic the exact dispersion. We then show numerical results of a fundamental soliton propagating in the presence of multiple scattering to demonstrate that choosing a subunit cell spatial step size is critical in accurately capturing the effects of multiple scattering, and illustrate the stochastic nature of disorder by simulating soliton propagation in various instances of disordered photonic crystal waveguides. Our approach is easily extended to include a wide range of optical nonlinearities and is applicable to various photonic nanostructures where power propagation is bidirectional, either by choice, or as a result of multiple scattering.

High-Responsivity Graphene–Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiue, Ren-Jye; Gao, Yuanda; Wang, Yifei

2015-11-11

Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal–oxide–semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we concludemore » that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron–phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.« less

Propagation losses in undoped and n-doped polycrystalline silicon wire waveguides.

PubMed

Zhu, Shiyang; Fang, Q; Yu, M B; Lo, G Q; Kwong, D L

2009-11-09

Polycrystalline silicon (polySi) wire waveguides with width ranging from 200 to 500 nm are fabricated by solid-phase crystallization (SPC) of deposited amorphous silicon (a-Si) on SiO(2) at a maximum temperature of 1000 degrees C. The propagation loss at 1550 nm decreases from 13.0 to 9.8 dB/cm with the waveguide width shrinking from 500 to 300 nm while the 200-nm-wide waveguides exhibit quite large loss (>70 dB/cm) mainly due to the relatively rough sidewall of waveguides induced by the polySi dry etch. By modifying the process sequence, i.e., first patterning the a-Si layer into waveguides by dry etch and then SPC, the sidewall roughness is significantly improved but the polySi crystallinity is degraded, leading to 13.9 dB/cm loss in the 200-nm-wide waveguides while larger losses in the wider waveguides. Phosphorus implantation causes an additional loss in the polySi waveguides. The doping-induced optical loss increases relatively slowly with the phosphorus concentration increasing up to 1 x 10(18) cm(-3), whereas the 5 x 10(18) cm(-3) doped waveguides exhibit large loss due to the dominant free carrier absorption. For all undoped polySi waveguides, further 1-2 dB/cm loss reduction is obtained by a standard forming gas (10%H(2) + 90%N(2)) annealing owing to the hydrogen passivation of Si dangling bonds present in polySi waveguides, achieving the lowest loss of 7.9 dB/cm in the 300-nm-wide polySi waveguides. However, for the phosphorus doped polySi waveguides, the propagation loss is slightly increased by the forming gas annealing.

Review Article: Progress in fabrication of transition metal dichalcogenides heterostructure systems

PubMed Central

Dong, Rui; Kuljanishvili, Irma

2017-01-01

Transition metal dichalcogenide (TMDC) semiconductors have attracted significant attention because of their rich electronic/photonic properties and importance for fundamental research and novel device applications. These materials provide a unique opportunity to build up high quality and atomically sharp heterostructures because of the nature of weak van der Waals interlayer interactions. The variable electronic properties of TMDCs (e.g., band gap and their alignment) provide a platform for the design of novel electronic and optoelectronic devices. The integration of TMDC heterostructures into the semiconductor industry is presently hindered by limited options in reliable production methods. Many exciting properties and device architectures which have been studied to date are, in large, based on the exfoliation methods of bulk TMDC crystals. These methods are generally more difficult to consider for large scale integration processes, and hence, continued developments of different fabrication strategies are essential for further advancements in this area. In this review, the authors highlight the recent progress in the fabrication of TMDC heterostructures. The authors will review several methods most commonly used to date for controllable heterostructure formation. One of the focuses will be on TMDC heterostructures fabricated by thermal chemical vapor deposition methods which allow for the control over the resulting materials, individual layers and heterostructures. Another focus would be on the techniques for selective growth of TMDCs. The authors will discuss conventional and unconventional fabrication methods and their advantages and drawbacks and will provide some guidance for future improvements. Mask-assisted and mask-free methods will be presented, which include traditional lithographic techniques (photo- or e-beam lithography) and some unconventional methods such as the focus ion beam and the recently developed direct-write patterning approach, which are shown to be promising for the fabrication of quality TMDC heterostructures. PMID:29075580

A novel photonic crystal ring resonator configuration for add/drop filtering

NASA Astrophysics Data System (ADS)

Zhang, Juan; Liu, Hao; Ding, Yipeng; Wang, Yang

2018-07-01

A novel compact photonic crystal ring resonator (PCRR) configuration is proposed to realize high-efficiency waveguided add-drop filtering. Its wavelength selection and dropping-direction exchange functions are demonstrated numerically. The working mechanism of this nested dual-loop resonant cavity structure is analyzed in detail.

A Cryogenic Waveguide Mount for Microstrip Circuit and Material Characterization

NASA Technical Reports Server (NTRS)

U-yen, Kongpop; Brown, Ari D.; Moseley, Samuel H.; Noroozian, Omid; Wollack, Edward J.

2016-01-01

A waveguide split-block fixture used in the characterization of thin-film superconducting planar circuitry at millimeter wavelengths is described in detail. The test fixture is realized from a pair of mode converters, which transition from rectangular-waveguide to on-chip microstrip-line signal propagation via a stepped ridge-guide impedance transformer. The observed performance of the W-band package at 4.2K has a maximum in-band transmission ripple of 2dB between 1.53 and 1.89 times the waveguide cutoff frequency. This metrology approach enables the characterization of superconducting microstrip test structures as a function temperature and frequency. The limitations of the method are discussed and representative data for superconducting Nb and NbTiN thin film microstrip resonators on single-crystal Si dielectric substrates are presented.

THz-wave generation via difference frequency mixing in strained silicon based waveguide utilizing its second order susceptibility χ((2)).

PubMed

Saito, Kyosuke; Tanabe, Tadao; Oyama, Yutaka

2014-07-14

Terahertz (THz) wave generation via difference frequency mixing (DFM) process in strain silicon membrane waveguides by introducing the straining layer is theoretically investigated. The Si(3)N(4) straining layer induces anisotropic compressive strain in the silicon core and results in the appearance of the bulk second order nonlinear susceptibility χ((2)) by breaking the crystal symmetry. We have proposed waveguide structures for THz wave generation under the DFM process by .using the modal birefringence in the waveguide core. Our simulations show that an output power of up to 0.95 mW can be achieved at 9.09 THz. The strained silicon optical device may open a widow in the field of the silicon-based active THz photonic device applications.

Dynamically tunable interface states in 1D graphene-embedded photonic crystal heterostructure

NASA Astrophysics Data System (ADS)

Huang, Zhao; Li, Shuaifeng; Liu, Xin; Zhao, Degang; Ye, Lei; Zhu, Xuefeng; Zang, Jianfeng

2018-03-01

Optical interface states exhibit promising applications in nonlinear photonics, low-threshold lasing, and surface-wave assisted sensing. However, the further application of interface states in configurable optics is hindered by their limited tunability. Here, we demonstrate a new approach to generate dynamically tunable and angle-resolved interface states using graphene-embedded photonic crystal (GPC) heterostructure device. By combining the GPC structure design with in situ electric doping of graphene, a continuously tunable interface state can be obtained and its tuning range is as wide as the full bandgap. Moreover, the exhibited tunable interface states offer a possibility to study the correspondence between space and time characteristics of light, which is beyond normal incident conditions. Our strategy provides a new way to design configurable devices with tunable optical states for various advanced optical applications such as beam splitter and dynamically tunable laser.

Mid-Infrared Photonic Devices Fabricated by Ultrafast Laser Inscription

DTIC Science & Technology

2016-07-01

active and passive photonic devices in single crystal, ceramic and glass substrates. This range of devices span applications such as: astrophysics [16...waveguide has been published this year in Applied Physics Letters. Reference: Macdonald, J.R., et al., Compact mid-infrared Cr:ZnSe channel...waveguide laser. Applied Physics Letters, 2013. 102(16): p. 161110. High efficiency circular cladding WG laser The initial demonstration of square double

Pb{sub 5}Bi{sub 24}Se{sub 41}: A new member of the homologous series forming topological insulator heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Segawa, Kouji; Taskin, A.A.; Ando, Yoichi, E-mail: y_ando@sanken.osa-u.ac.jp

2015-01-15

We have synthesized Pb{sub 5}Bi{sub 24}Se{sub 41}, which is a new member of the (PbSe){sub 5}(Bi{sub 2}Se{sub 3}){sub 3m} homologous series with m=4. This series of compounds consist of alternating layers of the topological insulator Bi{sub 2}Se{sub 3} and the ordinary insulator PbSe. Such a naturally-formed heterostructure has recently been elucidated to give rise to peculiar quasi-two-dimensional topological states throughout the bulk, and the discovery of Pb{sub 5}Bi{sub 24}Se{sub 41} expands the tunability of the topological states in this interesting homologous series. The trend in the resistivity anisotropy in this homologous series suggests an important role of hybridization of themore » topological states in the out-of-plane transport. - Graphical abstract: X-ray diffraction profiles taken on cleaved surfaces of single-crystal samples of the (PbSe){sub 5}(Bi{sub 2}Se{sub 3}){sub 3m} homologous series with various m values up to 4, which realizes topological insulator heterostructures. Schematic crystal structure of the new phase, m=4, is also shown. - Highlights: • We have synthesized a new member of the homologous series related to topological insulators. • In this compound, a heterostructure of topological and ordinary insulators naturally forms. • Resistivity anisotropy suggests an important role of hybridization of the topological states. • This compound expands the tunability of the topological states via chemical means.« less

Resonant Tunneling in Photonic Double Quantum Well Heterostructures.

PubMed

Cox, Joel D; Singh, Mahi R

2010-01-30

Here, we study the resonant photonic states of photonic double quantum well (PDQW) heterostructures composed of two different photonic crystals. The heterostructure is denoted as B/A/B/A/B, where photonic crystals A and B act as photonic wells and barriers, respectively. The resulting band structure causes photons to become confined within the wells, where they occupy discrete quantized states. We have obtained an expression for the transmission coefficient of the PDQW heterostructure using the transfer matrix method and have found that resonant states exist within the photonic wells. These resonant states occur in split pairs, due to a coupling between degenerate states shared by each of the photonic wells. It is observed that when the resonance energy lies at a bound photonic state and the two photonic quantum wells are far away from each other, resonant states appear in the transmission spectrum of the PDQW as single peaks. However, when the wells are brought closer together, coupling between bound photonic states causes an energy-splitting effect, and the transmitted states each have two peaks. Essentially, this means that the system can be switched between single and double transparent states. We have also observed that the total number of resonant states can be controlled by varying the width of the photonic wells, and the quality factor of transmitted peaks can be drastically improved by increasing the thickness of the outer photonic barriers. It is anticipated that the resonant states described here can be used to develop new types of photonic-switching devices, optical filters, and other optoelectronic devices.

Glass Solder Approach for Robust, Low-Loss, Fiber-to-Waveguide Coupling

NASA Technical Reports Server (NTRS)

McNeil, Shirley; Battle, Philip; Hawthorne, Todd; Lower, John; Wiley, Robert; Clark, Brett

2012-01-01

The key advantages of this approach include the fact that the index of interface glass (such as Pb glass n = 1.66) greatly reduces Fresnel losses at the fiber-to-waveguide interface, resulting in lower optical losses. A contiguous structure cannot be misaligned and readily lends itself for use on aircraft or space operation. The epoxy-free, fiber-to-waveguide interface provides an optically pure, sealed interface for low-loss, highpower coupling. Proof of concept of this approach has included successful attachment of the low-melting-temperature glass to the x-y plane of the crystal, successful attachment of the low-meltingtemperature glass to the end face of a standard SMF (single-mode fiber), and successful attachment of a wetted lowmelting- temperature glass SMF to the end face of a KTP crystal. There are many photonic components on the market whose performance and robustness could benefit from this coupling approach once fully developed. It can be used in a variety of fibercoupled waveguide-based components, such as frequency conversion modules, and amplitude and phase modulators. A robust, epoxy-free, contiguous optical interface lends itself to components that require low-loss, high-optical-power handling capability, and good performance in adverse environments such as flight or space operation.

Electronic transport in graphene-based heterostructures

NASA Astrophysics Data System (ADS)

Tan, J. Y.; Avsar, A.; Balakrishnan, J.; Koon, G. K. W.; Taychatanapat, T.; O'Farrell, E. C. T.; Watanabe, K.; Taniguchi, T.; Eda, G.; Castro Neto, A. H.; Özyilmaz, B.

2014-05-01

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this Letter, we study the surface morphology of 2D BN, gallium selenide (GaSe), and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis shows that these crystals have improved surface roughness (root mean square value of only ˜0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility (μ) on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (μ ˜ 38 000 cm2/V s at room temperature), followed by G/MoS2 (μ ˜ 10 000 cm2/V s) and G/GaSe (μ ˜ 2200 cm2/V s). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate.

Design for a broad non-transmission band gap of three-color filters using photonic heterostructures

NASA Astrophysics Data System (ADS)

Li, Hongfei; Guan, Huihuan; Han, Peide; Li, Yuping; Zhang, Caili

2013-01-01

The bandgap characteristics of one-dimensional (1D) photonic crystal (PC) heterostructures containing defects are studied using the transfer matrix method. The key is to search for the best combination style for different 1D PCs to form heterostructures containing Si/MgF2 multilayer films. The non-transmission range over the entire visible range can be enlarged substantially, and the phenomenon of three-color PC filters in blue-green-red light can be realized by adjusting the repeat cycle counts of various PCs. With perfect omnidirectional and high peak transmission three-color filters for the electric magnetic (TE) mode, this optimization design opens a promising way to fabricate three-color PC filters with a wide non-transmission range in the visible range, which can be applied to white LEDs.

Terraced-heterostructure large-optical-cavity AlGaAs diode laser - A new type of high-power CW single-mode device

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.

1982-01-01

A new terraced lateral wave confining structure is obtained by liquid phase epitaxy over channeled substrates misoriented perpendicular to the channels' direction. Single spatial and longitudinal mode CW operation is achieved to 50 mW from one facet, in large spot sizes (2 x 7.5 micron, 1/e squared points in intensity) and narrow beams (6 deg x 23 deg), full width half-power). At 70 C ambient temperature CW lasing is obtained to 15 mW from one facet. Weak mode confinement in an asymmetric lateral waveguides provides discrimination against high-order mode oscillation.

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

NASA Astrophysics Data System (ADS)

Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

2018-01-01

Heterostructures of wurtzite based devices have attracted great research interest because of the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN thin films on inexpensive and lattice matched ZnO substrates are both commercially and technologically desirable. Intrinsic wetting conditions, however, forbid such heterostructures as the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces, resulting in 3D growth mode and poor crystal quality. Based on first-principles calculations, we propose the use of surfactant hydrogen to dramatically alter the growth mode of the heterostructures. Stable H-involved surface configurations and interfaces are investigated with the help of our newly developed modelling techniques. The temperature and chemical potential dependence of our proposed strategy, which is critical in experiments, is predicted by applying the experimental Gibbs free energy of H2. Our thermodynamic wetting condition analysis is a crucial step for the growth of GaN on ZnO, and we find that introducing H will not degrade the stability of ZnO substrate. This approach will allow the growth of high-quality GaN thin films on ZnO substrates. We believe that our new strategy may reduce the manufactory cost, improve the crystal quality, and improve the efficiency of GaN-based devices.

Near-field optical technique applied for investigation of the characteristics of polymer fiber and waveguide structures.

PubMed

Ming, Hai; Tang, Lin; Sun, Xiaohong; Zhang, Jiangying; Wang, Pei; Lu, Yonghua; Bai, Ming; Guo, Yang; Xie, Aifang; Zhang, Zebo

2004-01-01

This article summarizes the near-field optical technique applied for investigating the characteristics of polymer fiber and waveguide structures. The near-field optical technique is used to analyze multimode interference structures of fiber. The localized fluctuation of the transmission caused by fractal cluster is carried out in Nd3+- and Eu3+-doped polymer fiber and film by means of a scanning near-field optical microscopy. The near-field optical spectrum of Nd3+-doped polymer fiber is investigated. The topography and near-field intensity images of Azo-polymer liquid crystal film for waveguide are obtained simultaneously.

Edge-Controlled Growth and Etching of Two-Dimensional GaSe Monolayers

DOE PAGES

Li, Xufan; Dong, Jichen; Idrobo, Juan C.; ...

2016-12-07

Understanding the atomistic mechanisms governing the growth of two-dimensional (2D) materials is of great importance in guiding the synthesis of wafer-sized, single-crystalline, high-quality 2D crystals and heterostructures. Etching, in many cases regarded as the reverse process of material growth, has been used to study the growth kinetics of graphene. In this paper, we explore a growth–etching–regrowth process of monolayer GaSe crystals, including single-crystalline triangles and irregularly shaped domains formed by merged triangles. We show that the etching begins at a slow rate, creating triangular, truncated triangular, or hexagonally shaped holes that eventually evolve to exclusively triangles that are rotated 60°more » with respect to the crystalline orientation of the monolayer triangular crystals. The regrowth occurs much faster than etching, reversibly filling the etched holes and then enlarging the size of the monolayer crystals. A theoretical model developed based on kinetic Wulff construction (KWC) theory and density functional theory (DFT) calculations accurately describe the observed morphology evolution of the monolayer GaSe crystals and etched holes during the growth and etching processes, showing that they are governed by the probability of atom attachment/detachment to/from different types of edges with different formation energies of nucleus/dents mediated by chemical potential difference Δμ between Ga and Se. Finally, our growth–etching–regrowth study provides not only guidance to understand the growth mechanisms of 2D binary crystals but also a potential method for the synthesis of large, shape-controllable, high-quality single-crystalline 2D crystals and their lateral heterostructures.« less

Low-loss waveguides for THz guidance and devices

NASA Astrophysics Data System (ADS)

Rahman, B. M. A.; Themistos, C.; Tanvir, H.; Uthman, M.; Quadir, A.; Markides, C.

2013-03-01

The terahertz (THz) region occupies a large portion of the electromagnetic spectrum, located between the microwave and optical frequencies and normally is defined as the band ranging from 0.1 to 10 THz. In recent years, this intermediate THz radiation band has attracted considerable interest, because it offers significant scientific and technological potential for applications in many fields, such as sensing [1], imaging [2] and spectroscopy [3]. However, waveguiding in this intermediate spectral region is a major challenge and strong dielectric and conductive losses in the terahertz frequency range have been a major problem for waveguiding. The conventional guiding structures exemplified by microstrips, coplanar striplines and coplanar waveguides [4] are highly lossy and dispersive. However, so far the most promising dielectric waveguides have been the use of photonic crystal fibers at terahertz frequencies [5, 6] and metal coated guides [7] at terahertz frequencies. In this paper, various types of practical dielectric and metal coated waveguides are evaluated and design optimization of Quantum Cascade Lasers, MMI-based power splitters and narrow-band filters are presented, by using full-vectorial finite element method [8].

Laser-induced nonlinear crystalline waveguide on glass fiber format and diode-pumped second harmonic generation

NASA Astrophysics Data System (ADS)

Shi, Jindan; Feng, Xian

2018-03-01

We report a diode pumped self-frequency-doubled nonlinear crystalline waveguide on glass fiber. A ribbon fiber has been drawn on the glass composition of 50GeO2-25B2O3-25(La,Yb)2O3. Surface channel waveguides have been written on the surface of the ribbon fiber, using space-selective laser heating method with the assistance of a 244 nm CW UV laser. The Raman spectrum of the written area indicates that the waveguide is composed of structure-deformed nonlinear (La,Yb)BGeO5 crystal. The laser-induced surface wavy cracks have also been observed and the forming mechanism of the wavy cracks has been discussed. Efficient second harmonic generation has been observed from the laser-induced crystalline waveguide, using a 976 nm diode pump. 13 μW of 488 nm output has been observed from a 17 mm long waveguide with 26.0 mW of launched diode pump power, corresponding to a normalized conversion efficiency of 4.4%W-1.

Capillary-Force-Assisted Clean-Stamp Transfer of Two-Dimensional Materials.

PubMed

Ma, Xuezhi; Liu, Qiushi; Xu, Da; Zhu, Yangzhi; Kim, Sanggon; Cui, Yongtao; Zhong, Lanlan; Liu, Ming

2017-11-08

A simple and clean method of transferring two-dimensional (2D) materials plays a critical role in the fabrication of 2D electronics, particularly the heterostructure devices based on the artificial vertical stacking of various 2D crystals. Currently, clean transfer techniques rely on sacrificial layers or bulky crystal flakes (e.g., hexagonal boron nitride) to pick up the 2D materials. Here, we develop a capillary-force-assisted clean-stamp technique that uses a thin layer of evaporative liquid (e.g., water) as an instant glue to increase the adhesion energy between 2D crystals and polydimethylsiloxane (PDMS) for the pick-up step. After the liquid evaporates, the adhesion energy decreases, and the 2D crystal can be released. The thin liquid layer is condensed to the PDMS surface from its vapor phase, which ensures the low contamination level on the 2D materials and largely remains their chemical and electrical properties. Using this method, we prepared graphene-based transistors with low charge-neutral concentration (3 × 10 10 cm -2 ) and high carrier mobility (up to 48 820 cm 2 V -1 s -1 at room temperature) and heterostructure optoelectronics with high operation speed. Finally, a capillary-force model is developed to explain the experiment.

The semiconductor waveguide facet reflectivity problem

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herzinger, C.M.; Lu, C.C.; DeTemple, T.A.

1993-08-01

The problem of the facet reflectivity of a semiconductor slab waveguide is reexamined as an extension of Ikegami's original approach but which includes radiation-like modes. The latter are included, using a guide-within-a-guide geometry, as modes bound to a thick air-cladding guide which contains the core profile of interest. In this model with a relatively simple analysis, the coupling from the fundamental mode to radiation modes can be analyzed. The cross-coupling to the radiation modes is considered in detail for the simple double heterostructure waveguide and is shown to be important only for large core-cladding index differences and for strong modalmore » confinement wherein it results in a true facet loss. The conditions for this are the same as for low threshold lasers so that the loss sets a maximum limit on the equivalent internal quantum efficiency. A separate one-dimensional finite element, numerical mode matching program, which treats evanescent and propagating radiation modes, is used as a comparison. The two methods of accounting for radiation modes are shown to be in good agreement: both predict reduced extremes in reflectivity when compared with the original Ikegami model. Modern graded core cases are treated as general examples along with the specific quantum well laser structures taken from the literature. These include II-VI and III-V structures spanning wavelengths from 0.5 [mu]m to 10.0 [mu]m.« less

Shaping plasmon beams via the controlled illumination of finite-size plasmonic crystals

PubMed Central

Bouillard, J.-S.; Segovia, P.; Dickson, W.; Wurtz, G. A.; Zayats, A. V.

2014-01-01

Plasmonic crystals provide many passive and active optical functionalities, including enhanced sensing, optical nonlinearities, light extraction from LEDs and coupling to and from subwavelength waveguides. Here we study, both experimentally and numerically, the coherent control of SPP beam excitation in finite size plasmonic crystals under focussed illumination. The correct combination of the illuminating spot size, its position relative to the plasmonic crystal, wavelength and polarisation enables the efficient shaping and directionality of SPP beam launching. We show that under strongly focussed illumination, the illuminated part of the crystal acts as an antenna, launching surface plasmon waves which are subsequently filtered by the surrounding periodic lattice. Changing the illumination conditions provides rich opportunities to engineer the SPP emission pattern. This offers an alternative technique to actively modulate and control plasmonic signals, either via micro- and nano-electromechanical switches or with electro- and all-optical beam steering which have direct implications for the development of new integrated nanophotonic devices, such as plasmonic couplers and switches and on-chip signal demultiplexing. This approach can be generalised to all kinds of surface waves, either for the coupling and discrimination of light in planar dielectric waveguides or the generation and control of non-diffractive SPP beams. PMID:25429786

Coupling mid-infrared light from a photonic crystal waveguide to metallic transmission lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blanco-Redondo, Andrea, E-mail: andrea.blanco@tecnalia.com, E-mail: r.hillenbrand@nanogune.eu; Dpto. Electronica y Telecom., E.T.S. Ingeniería Bilbao, UPV/EHU, Alda. Urquijo, 48103 Bilbao, Bizkaia; Sarriugarte, Paulo

2014-01-06

We propose and theoretically study a hybrid structure consisting of a photonic crystal waveguide (PhC-wg) and a two-wire metallic transmission line (TL), engineered for efficient transfer of mid-infrared (mid-IR) light between them. An efficiency of 32% is obtained for the coupling from the transverse magnetic (TM) photonic mode to the symmetric mode of the TL, with a predicted intensity enhancement factor of 53 at the transmission line surface. The strong coupling is explained by the small phase velocity mismatch and sufficient spatial overlapping between the modes. This hybrid structure could find applications in highly integrated mid-IR photonic-plasmonic devices for biologicalmore » and gas sensing, among others.« less

Polymer photonic crystal slab waveguides

NASA Astrophysics Data System (ADS)

Liguda, C.; Böttger, G.; Kuligk, A.; Blum, R.; Eich, M.; Roth, H.; Kunert, J.; Morgenroth, W.; Elsner, H.; Meyer, H. G.

2001-04-01

We present details of the fabrication, calculations, and transmission measurements for finite two-dimensional (2D) polymer photonic crystal (PC) slab waveguides, which were fabricated from a benzocyclobutene polymer on a low refractive index substrate from Teflon. A square air hole lattice (500 nm lattice constant, 300 nm hole diameter) was realized by electron beam lithography and reactive ion etching. Polarization and wavelength dependent transmission results show TE-like and TM-like stop gaps at 1.3 μm excitation wavelengths and are in good agreement with the calculated data obtained by 2D and three-dimensional finite difference time domain methods. Transmission was suppressed by 15 dB in the center of the TE-like stop gap for a PC length of ten lattice constants.

Laser Development for Gravitational-Wave Interferometry in Space

NASA Technical Reports Server (NTRS)

Numata, Kenji; Camp, Jordan

2012-01-01

We are reporting on our development work on laser (master oscillator) and optical amplifier systems for gravitational-wave interferometry in space. Our system is based on the mature, wave-guided optics technologies, which have advantages over bulk, crystal-based, free-space optics. We are investing in a new type of compact, low-noise master oscillator, called the planar-waveguide external cavity diode laser. We made measurements, including those of noise, and performed space-qualification tests.

Laser Materials Search and Characterization

DTIC Science & Technology

2014-05-30

AgBr doped with dysprosium ions are obtained by extrusion, and their optical and spectral properties are studied. Task 3. Waveguides based on LiF...fluoride are obtained by extrusion for the first time. Task 4. Spectroscopic properties of Dy3+ ions in chalcogenide crystals and fibers are studied...Task 5. Crystals and ceramics doped with rare-earth ions , as well as glasses and crystals doped with bismuth ions , are synthesized. Their

Robust spin-valley polarization in commensurate Mo S2 /graphene heterostructures

NASA Astrophysics Data System (ADS)

Du, Luojun; Zhang, Qian; Gong, Benchao; Liao, Mengzhou; Zhu, Jianqi; Yu, Hua; He, Rui; Liu, Kai; Yang, Rong; Shi, Dongxia; Gu, Lin; Yan, Feng; Zhang, Guangyu; Zhang, Qingming

2018-03-01

The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. Mo S2 /graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of Mo S2 , are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate Mo S2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.

Tunable plasmonic crystal

DOEpatents

Dyer, Gregory Conrad; Shaner, Eric A.; Reno, John L.; Aizin, Gregory

2015-08-11

A tunable plasmonic crystal comprises several periods in a two-dimensional electron or hole gas plasmonic medium that is both extremely subwavelength (.about..lamda./100) and tunable through the application of voltages to metal electrodes. Tuning of the plasmonic crystal band edges can be realized in materials such as semiconductors and graphene to actively control the plasmonic crystal dispersion in the terahertz and infrared spectral regions. The tunable plasmonic crystal provides a useful degree of freedom for applications in slow light devices, voltage-tunable waveguides, filters, ultra-sensitive direct and heterodyne THz detectors, and THz oscillators.

Distributed temperature sensing using a SPIRAL configuration ultrasonic waveguide

NASA Astrophysics Data System (ADS)

Periyannan, Suresh; Balasubramaniam, Krishnan

2017-02-01

Distributed temperature sensing has important applications in the long term monitoring of critical enclosures such as containment vessels, flue gas stacks, furnaces, underground storage tanks and buildings for fire risk. This paper presents novel techniques for such measurements, using wire in a spiral configuration and having special embodiments such a notch for obtaining wave reflections from desired locations. Transduction is performed using commercially available Piezo-electric crystal that is bonded to one end of the waveguide. Lower order axisymmetric guided ultrasonic modes were employed. Time of fight (TOF) differences between predefined reflectors located on the waveguides are used to infer temperature profile in a chamber with different temperatures. The L(0,1) wave mode (pulse echo approach) was generated/received in a spiral waveguide at different temperatures for this work. The ultrasonic measurements were compared with commercially available thermocouples.

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

NASA Astrophysics Data System (ADS)

Coles, R. J.; Price, D. M.; Dixon, J. E.; Royall, B.; Clarke, E.; Kok, P.; Skolnick, M. S.; Fox, A. M.; Makhonin, M. N.

2016-03-01

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95+/-5% and have potential to serve as the basis of spin-logic and network implementations.

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

PubMed Central

Coles, R. J.; Price, D. M.; Dixon, J. E.; Royall, B.; Clarke, E.; Kok, P.; Skolnick, M. S.; Fox, A. M.; Makhonin, M. N.

2016-01-01

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations. PMID:27029961

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer.

PubMed

Coles, R J; Price, D M; Dixon, J E; Royall, B; Clarke, E; Kok, P; Skolnick, M S; Fox, A M; Makhonin, M N

2016-03-31

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations.

Mid-infrared materials and devices on a Si platform for optical sensing

PubMed Central

Singh, Vivek; Lin, Pao Tai; Patel, Neil; Lin, Hongtao; Li, Lan; Zou, Yi; Deng, Fei; Ni, Chaoying; Hu, Juejun; Giammarco, James; Soliani, Anna Paola; Zdyrko, Bogdan; Luzinov, Igor; Novak, Spencer; Novak, Jackie; Wachtel, Peter; Danto, Sylvain; Musgraves, J David; Richardson, Kathleen; Kimerling, Lionel C; Agarwal, Anuradha M

2014-01-01

In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors. PMID:27877641

Monolithic crystalline cladding microstructures for efficient light guiding and beam manipulation in passive and active regimes

PubMed Central

Jia, Yuechen; Cheng, Chen; Vázquez de Aldana, Javier R.; Castillo, Gabriel R.; Rabes, Blanca del Rosal; Tan, Yang; Jaque, Daniel; Chen, Feng

2014-01-01

Miniature laser sources with on-demand beam features are desirable devices for a broad range of photonic applications. Lasing based on direct-pump of miniaturized waveguiding active structures offers a low-cost but intriguing solution for compact light-emitting devices. In this work, we demonstrate a novel family of three dimensional (3D) photonic microstructures monolithically integrated in a Nd:YAG laser crystal wafer. They are produced by the femtosecond laser writing, capable of simultaneous light waveguiding and beam manipulation. In these guiding systems, tailoring of laser modes by both passive/active beam splitting and ring-shaped transformation are achieved by an appropriate design of refractive index patterns. Integration of graphene thin-layer as saturable absorber in the 3D laser structures allows for efficient passive Q-switching of tailored laser radiations which may enable miniature waveguiding lasers for broader applications. Our results pave a way to construct complex integrated passive and active laser circuits in dielectric crystals by using femtosecond laser written monolithic photonic chips. PMID:25100561

All-optical diode structure based on asymmetrical coupling by a micro-cavity and FP cavity at two sides of photonic crystal waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Bin, E-mail: liubin-d@126.com; Liu, Yun-Feng; He, Xing-Dao

2016-06-15

A high efficiency all-optical diode based on photonic crystal (PC) waveguide has been proposed and numerically investigated by finite-difference time-domain (FDTD) method. The structure is asymmetrically coupled by a micro-cavity containing nonlinear Kerr medium and a FP cavity at sides of PC waveguide. Because of interference between two cavities, Fano peak and FP peak can both appear in transmission spectra and unidirectional transmission can be achieved. The working wavelength can set between two peaks and near to the Fano peak. For forward launch with suitable light intensity, nonlinear Kerr effect of micro-cavity can been excited. It will result in redmore » shift of Fano peak and achieving forward transmission. But for backward launch, a stronger incidence light is needed to the excite Kerr effect due to the design of asymmetric structure. This design has many advantages, including high maximum transmittance, high transmittance contrast ratio, low power threshold, short response time, and ease of integration.« less

Interface Schottky barrier engineering via strain in metal-semiconductor composites

NASA Astrophysics Data System (ADS)

Ma, Xiangchao; Dai, Ying; Yu, Lin; Huang, Baibiao

2016-01-01

The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures.The interfacial carrier transfer property, which is dominated by the interface Schottky barrier height (SBH), plays a crucial role in determining the performance of metal-semiconductor heterostructures in a variety of applications. Therefore, artificially controlling the interface SBH is of great importance for their industrial applications. As a model system, the Au/TiO2 (001) heterostructure is studied using first-principles calculations and the tight-binding method in the present study. Our investigation demonstrates that strain can be an effective way to decrease the interface SBH and that the n-type SBH can be more effectively decreased than the p-type SBH. Astonishingly, strain affects the interface SBH mainly by changing the intrinsic properties of Au and TiO2, whereas the interfacial potential alignment is almost independent of strain due to two opposite effects, which are induced by strain at the interfacial region. These observed trends can be understood on the basis of the general free-electron gas model of typical metals, the tight-binding theory and the crystal-field theory, which suggest that similar trends may be generalized for many other metal-semiconductor heterostructures. Given the commonness and tunability of strain in typical heterostructures, we anticipate that the tunability of the interface SBH with strain described here can provide an alternative effective way for realizing more efficient applications of relevant heterostructures. Electronic supplementary information (ESI) available: The changes of Au 5d DOS, valence bands of TiO2, the interfacial bond length and interfacial energy with strain, and the local DOS results for the change of SBH with strain. See DOI: 10.1039/c5nr05583k

Dopant diffusion and segregation in semiconductor heterostructures: Part III, diffusion of Si into GaAs

NASA Astrophysics Data System (ADS)

Chen, C.-H.; Gösele, U. M.; Tan, T. Y.

We have mentioned previously that in the third part of the present series of papers, a variety of n-doping associated phenomena will be treated. Instead, we have decided that this paper, in which the subject treated is diffusion of Si into GaAs, shall be the third paper of the series. This choice is arrived at because this subject is a most relevent heterostructure problem, and also because of space and timing considerations. The main n-type dopant Si in GaAs is amphoteric which may be incorporated as shallow donor species SiGa+ and as shallow acceptor species SiAs-. The solubility of SiAs- is much lower than that of SiGa+ except at very high Si concentration levels. Hence, a severe electrical self-compensation occurs at very high Si concentrations. In this study we have modeled the Si distribution process in GaAs by assuming that the diffusing species is SiGa+ which will convert into SiAs- in accordance with their solubilities and that the point defect species governing the diffusion of SiGa+ are triply-negatively-charged Ga vacancies VGa3-. The outstanding features of the Si indiffusion profiles near the Si/GaAs interface have been quantitatively explained for the first time. Deposited on the GaAs crystal surface, the Si source material is a polycrystalline Si layer which may be undoped or n+-doped using As or P. Without the use of an As vapor phase in the ambient, the As- and P-doped source materials effectively render the GaAs crystals into an As-rich composition, which leads to a much more efficient Si indiffusion process than for the case of using undoped source materials which maintains the GaAs crystals in a relatively As-poor condition. The source material and the GaAs crystal together form a heterostructure with its junction influencing the electron distribution in the region, which, in turn, affects the Si indiffusion process prominently.

Exposing high-energy surfaces by rapid-anneal solid phase epitaxy

DOE PAGES

Wang, Y.; Song, Y.; Peng, R.; ...

2017-08-08

The functional design of nanoscale transition metal oxide heterostructures depends critically on the growth of atomically flat epitaxial thin films. Much of the time, improved functionality is expected for heterostructures and surfaces with orientations that do not have the lowest surface free energy. For example, crystal faces with a high surface free energy, such as rutile (001) planes, frequently exhibit higher catalytic activities but are correspondingly harder to synthesize due to energy-lowering faceting transitions. We propose a broadly applicable rapid-anneal solid phase epitaxial synthesis approach for the creation of atomically flat, high surface free energy oxide heterostructures. We also demonstratemore » its efficacy via the synthesis of atomically flat, epitaxial RuO 2(001) films with a superior oxygen evolution activity, quantified by their lower onset potential and higher current density, relative to that of more common RuO 2(110) films.« less

van der Waals Heterostructures with High Accuracy Rotational Alignment.

PubMed

Kim, Kyounghwan; Yankowitz, Matthew; Fallahazad, Babak; Kang, Sangwoo; Movva, Hema C P; Huang, Shengqiang; Larentis, Stefano; Corbet, Chris M; Taniguchi, Takashi; Watanabe, Kenji; Banerjee, Sanjay K; LeRoy, Brian J; Tutuc, Emanuel

2016-03-09

We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moiré pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.

Band offsets in ITO/Ga2O3 heterostructures

NASA Astrophysics Data System (ADS)

Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito

2017-11-01

The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be -0.78 ± 0.30 eV, while the conduction band offset was determined to be -0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.

Complexes of dipolar excitons in layered quasi-two-dimensional nanostructures

NASA Astrophysics Data System (ADS)

Bondarev, Igor V.; Vladimirova, Maria R.

2018-04-01

We discuss neutral and charged complexes (biexcitons and trions) formed by indirect excitons in layered quasi-two-dimensional semiconductor heterostructures. Indirect excitons—long-lived neutral Coulomb-bound pairs of electrons and holes of different layers—have been known for semiconductor coupled quantum wells and have recently been reported for van der Waals heterostructures such as double bilayer graphene and transition-metal dichalcogenides. Using the configuration space approach, we derive the analytical expressions for the trion and biexciton binding energies as a function of interlayer distance. The method captures essential kinematics of complex formation to reveal significant binding energies, up to a few tens of meV for typical interlayer distances ˜3 -5 Å , with the trion binding energy always being greater than that of the biexciton. Our results can contribute to the understanding of more complex many-body phenomena such as exciton Bose-Einstein condensation and Wigner-like electron-hole crystallization in layered semiconductor heterostructures.

Engineering Pt/Pd Interfacial Electronic Structures for Highly Efficient Hydrogen Evolution and Alcohol Oxidation.

PubMed

Fan, Jinchang; Qi, Kun; Zhang, Lei; Zhang, Haiyan; Yu, Shansheng; Cui, Xiaoqiang

2017-05-31

Tailoring the interfacial structure of Pt-based catalysts has emerged as an effective strategy to improve catalytic activity. However, little attention has been focused on investigating the relationship between the interfacial facets and their catalytic activity. Here, we design and implement Pd-Pt interfaces with controlled heterostructure features by epitaxially growing Pt nanoparticles on Pd nanosheets. On the basis of both density functional theory calculation and experimental results, we demonstrate that charge transfer from Pd to Pt is highly dependent on the interfacial facets of Pd substrates. Therefore, the Pd-Pt heterostructure with Pd(100)-Pt interface exhibits excellent activity and long-term stability for hydrogen evolution and methanol/ethanol oxidation reactions in alkaline medium, much better than that with Pd (111)-Pt interface or commercial Pt/C. Interfacial crystal facet-dependent electronic structural modulation sheds a light on the design and investigation of new heterostructures for high-activity catalysts.

Design of a micromachined terahertz electromagnetic crystals (EMXT) channel-drop filter on silicon-substrate

NASA Astrophysics Data System (ADS)

Zhou, Kai; Liu, Yong; Si, Liming; Lv, Xin

2013-08-01

An integrated 0.5 THz electromagnetic crystals(EMXT) channel-drop filter based on PBG structure is presented in this paper. A channel-drop filter is a device in which a narrow bandwidth is redirected to another "drop" waveguide while other frequencies are unaffected. It's capable of extracting a certain frequency from a continuous spectrum in the bus channel and passing it to the test channel. It has potential applications in photonic integrated circuits, radio astronomy, THz spectroscopy, THz communication and remote sensing radar receiver. PBG structures(or photonic crystals) are periodic structures which possess band gaps, where the electromagnetic wave of certain ranges of frequencies cannot pass through and is reflected. The proposed channel-drop filter consists of input waveguide,output waveguide and PBG structure. The proposed filter is simulated using the finite element method and can be fabricated by micro-electromechanical systems (MEMS) technology,due to its low cost, high performance and high processing precision.The filter operation principle and fabrication process are discussed.The simulation results show its ability to filter the frequency of 496GHz with a linewidth of approximately 4GHz and transmission of 27.2 dB above background.The loss at resonant frequency is less than 1dB considering the thickness and roughness of gold layer required by the MEMS process.The channel drop efficiency is 84%.

Three-Dimensional Self-Assembled Photonic Crystal Waveguide

NASA Astrophysics Data System (ADS)

Baek, Kang-Hyun

Photonic crystals (PCs), two- or three-dimensionally periodic, artificial, and dielectric structures, have a specific forbidden band for electromagnetic waves, referred to as photonic bandgap (PBG). The PBG is analogous to the electronic bandgap in natural crystal structures with periodic atomic arrangement. A well-defined and embedded planar, line, or point defect within the PCs causes a break in its structural periodicity, and introduces a state in the PBG for light localization. It offers various applications in integrated optics and photonics including optical filters, sharp bending light guides and very low threshold lasers. Using nanofabrication processes, PCs of the 2-D slab-type and 3-D layer-by-layer structures have been investigated widely. Alternatively, simple and low-cost self-assembled PCs with full 3-D PBG, inverse opals, have been suggested. A template with face centered cubic closed packed structure, opal, may initially be built by self-assembly of colloidal spheres, and is selectively removed after infiltrating high refractive index materials into the interstitials of spheres. In this dissertation, the optical waveguides utilizing the 3-D self-assembled PCs are discussed. The waveguides were fabricated by microfabrication technology. For high-quality colloidal silica spheres and PCs, reliable synthesis, self-assembly, and characterization techniques were developed. Its theoretical and experimental demonstrations are provided and correlated. They suggest that the self-assembled PCs with PBG are feasible for the applications in integrated optics and photonics.

Compact & Ultra-High Resolution Terahertz Spectroscopic/Fingerprint System

DTIC Science & Technology

2011-05-11

successfully fusion - spliced with commercial silica fibers for the first time, which makes the whole MOPA system monolithic. Fig. 7 (a) shows the output...QPM-GaP crystals and the proposed THz crystal fiber converters for high power parametric THz source, THz waveguide modeling for high efficiency and...THz spectroscopic/fingerprinting system. We have achieved 0.212 mJ fiber laser pulses with transform-limited linewidth, bonded QPM-GaP crystals and

11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene.

PubMed

Okhrimchuk, Andrey G; Obraztsov, Petr A

2015-06-08

We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires-Tournois interferometer.

11-GHz waveguide Nd:YAG laser CW mode-locked with single-layer graphene

PubMed Central

Okhrimchuk, Andrey G.; Obraztsov, Petr A.

2015-01-01

We report stable, passive, continuous-wave (CW) mode-locking of a compact diode-pumped waveguide Nd:YAG laser with a single-layer graphene saturable absorber. The depressed cladding waveguide in the Nd:YAG crystal is fabricated with an ultrafast laser inscription method. The saturable absorber is formed by direct deposition of CVD single-layer graphene on the output coupler. The few millimeter-long cavity provides generation of 16-ps pulses with repetition rates in the GHz range (up to 11.3 GHz) and 12 mW average power. Stable CW mode-locking operation is achieved by controlling the group delay dispersion in the laser cavity with a Gires–Tournois interferometer. PMID:26052678

Infrared evanescent field sensing with quantum cascade lasers and planar silver halide waveguides.

PubMed

Charlton, Christy; Katzir, Abraham; Mizaikoff, Boris

2005-07-15

We demonstrate the first midinfrared evanescent field absorption measurements with an InGaAs/AlInAs/InP distributed feedback (DFB) quantum cascade laser (QCL) light source operated at room temperature coupled to a free-standing, thin-film, planar, silver halide waveguide. Two different analytes, each matched to the emission frequency of a QCL, were investigated to verify the potential of this technique. The emission of a 1650 cm(-1) QCL overlaps with the amide absorption band of urea, which was deposited from methanol solution, forming urea crystals at the waveguide surface after solvent evaporation. Solid urea was detected down to 80.7 microg of precipitate at the waveguide surface. The emission frequency of a 974 cm(-1) QCL overlaps with the CH3-C absorption feature of acetic anhydride. Solutions of acetic anhydride in acetonitrile have been detected down to a volume of 0.01 microL (10.8 microg) of acetic anhydride solution after deposition at the planar waveguide (PWG) surface. Free-standing, thin-film, planar, silver halide waveguides were produced by press-tapering heated, cylindrical, silver halide fiber segments to create waveguides with a thickness of 300-190 microm, a width of 3 mm, and a length of 35 mm. In addition, Fourier transform infrared (FT-IR) evanescent field absorption measurements with planar silver halide waveguides and transmission absorption QCL measurements verify the obtained results.

Effect of lattice mismatch on the magnetic properties of nanometer-thick La0.9Ba0.1MnO3 (LBM) films and LBM/BaTiO3/LBM heterostructures

NASA Astrophysics Data System (ADS)

Mirzadeh Vaghefi, P.; Baghizadeh, A.; Willinger, M.; Lourenço, A. A. C. S.; Amaral, V. S.

2017-12-01

Oxide multiferroic thin films and heterostructures offer a wide range of properties originated from intrinsic coupling between lattice strain and nanoscale magnetic/electronic ordering. La0.9Ba0.1MnO3 (LBM) thin-films and LBM/BaTiO3/LBM (LBMBT) heterostructures were grown on single crystalline [100] silicon and [0001] Al2O3 using RF magnetron sputtering to study the effect of crystallinity and induced lattice mismatch in the film on magnetic properties of deposited films and heterostructures. The thicknesses of the films on Al2O3 and Si are 70 and 145 nm, respectively, and for heterostructures are 40/30/40 nm on both substrates. The microstructure of the films, state of strain and growth orientations was studied by XRD and microscopy techniques. Interplay of microstructure, strain and magnetic properties is further investigated. It is known that the crystal structure of substrates and imposed tensile strain affect the physical properties; i.e. magnetic behavior of the film. The thin layer grown on Al2O3 substrate shows out-of-plane compressive strain, while Si substrate induces tensile strain on the deposited film. The magnetic transition temperatures (Tc) of the LBM film on the Si and Al2O3 substrates are found to be 195 K and 203 K, respectively, slightly higher than the bulk form, 185 K. The LBMBT heterostructure on Si substrate shows drastic decrease in magnetization due to produced defects created by diffusion of Ti ions into magnetic layer. Meanwhile, the Tc in LBMBTs increases in respect to other studied single layers and heterostructure, because of higher tensile strain induced at the interfaces.

Nanoparticle Stability in Axial InAs-InP Nanowire Heterostructures with Atomically Sharp Interfaces.

PubMed

Zannier, Valentina; Rossi, Francesca; Dubrovskii, Vladimir G; Ercolani, Daniele; Battiato, Sergio; Sorba, Lucia

2018-01-10

The possibility to expand the range of material combinations in defect-free heterostructures is one of the main motivations for the great interest in semiconductor nanowires. However, most axial nanowire heterostructures suffer from interface compositional gradients and kink formation, as a consequence of nanoparticle-nanowire interactions during the metal-assisted growth. Understanding such interactions and how they affect the growth mode is fundamental to achieve a full control over the morphology and the properties of nanowire heterostructures for device applications. Here we demonstrate that the sole parameter affecting the growth mode (straight or kinked) of InP segments on InAs nanowire stems by the Au-assisted method is the nanoparticle composition. Indeed, straight InAs-InP nanowire heterostructures are obtained only when the In/Au ratio in the nanoparticles is low, typically smaller than 1.5. For higher In content, the InP segments tend to kink. Tailoring the In/Au ratio by the precursor fluxes at a fixed growth temperature enables us to obtain straight and radius-uniform InAs-InP nanowire heterostructures (single and double) with atomically sharp interfaces. We present a model that is capable of describing all the experimentally observed phenomena: straight growth versus kinking, the stationary nanoparticle compositions in pure InAs and InAs-InP nanowires, the crystal phase trends, and the interfacial abruptness. By taking into account different nanowire/nanoparticle interfacial configurations (forming wetting or nonwetting monolayers in vertical or tapered geometry), our generalized model provides the conditions of nanoparticle stability and abrupt heterointerfaces for a rich variety of growth scenarios. Therefore, our results provide a powerful tool for obtaining high quality InAs-InP nanowire heterostructures with well-controlled properties and can be extended to other material combinations based on the group V interchange.

Integrating cell on chip—Novel waveguide platform employing ultra-long optical paths

NASA Astrophysics Data System (ADS)

Fohrmann, Lena Simone; Sommer, Gerrit; Pitruzzello, Giampaolo; Krauss, Thomas F.; Petrov, Alexander Yu.; Eich, Manfred

2017-09-01

Optical waveguides are the most fundamental building blocks of integrated optical circuits. They are extremely well understood, yet there is still room for surprises. Here, we introduce a novel 2D waveguide platform which affords a strong interaction of the evanescent tail of a guided optical wave with an external medium while only employing a very small geometrical footprint. The key feature of the platform is its ability to integrate the ultra-long path lengths by combining low propagation losses in a silicon slab with multiple reflections of the guided wave from photonic crystal (PhC) mirrors. With a reflectivity of 99.1% of our tailored PhC-mirrors, we achieve interaction paths of 25 cm within an area of less than 10 mm2. This corresponds to 0.17 dB/cm effective propagation which is much lower than the state-of-the-art loss of approximately 1 dB/cm of single mode silicon channel waveguides. In contrast to conventional waveguides, our 2D-approach leads to a decay of the guided wave power only inversely proportional to the optical path length. This entirely different characteristic is the major advantage of the 2D integrating cell waveguide platform over the conventional channel waveguide concepts that obey the Beer-Lambert law.

The use of hollow-core photonic crystal fibres as biological sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinin, A V; Skibina, Yu S; Tuchin, Valerii V

2011-04-30

The results of development and study of a new type of a hollow-core photonic crystal fibre with radially increasing diameter of capillaries in the structured cladding are presented. The waveguide possesses a specific transmission spectrum and can be used as an efficient analyser of biological media. (optical technologies in biophysics and medicine)

Monolayer atomic crystal molecular superlattices.

PubMed

Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A; Huang, Yu; Duan, Xiangfeng

2018-03-07

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 10 7 , along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Monolayer atomic crystal molecular superlattices

NASA Astrophysics Data System (ADS)

Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng

2018-03-01

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered CrCl 3 crystals

DOE PAGES

McGuire, Michael A.; Clark, Genevieve; KC, Santosh; ...

2017-06-19

CrCl 3 is a layered insulator that undergoes a crystallographic phase transition below room temperature and orders antiferromagnetically at low temperature. Weak van der Waals bonding between the layers and ferromagnetic in-plane magnetic order make it a promising material for obtaining atomically thin magnets and creating van der Waals heterostructures. In this work we have grown crystals of CrCl 3, revisited the structural and thermodynamic properties of the bulk material, and explored mechanical exfoliation of the crystals. We find two distinct anomalies in the heat capacity at 14 and 17 K confirming that the magnetic order develops in two stagesmore » on cooling, with ferromagnetic correlations forming before long-range antiferromagnetic order develops between them. This scenario is supported by magnetization data. A magnetic phase diagram is constructed from the heat capacity and magnetization results. We also find an anomaly in the magnetic susceptibility at the crystallographic phase transition, indicating some coupling between the magnetism and the lattice. First-principles calculations accounting for van der Waals interactions also indicate spin-lattice coupling, and find multiple nearly degenerate crystallographic and magnetic structures consistent with the experimental observations. Lastly, we demonstrate that monolayer and few-layer CrCl 3 specimens can be produced from the bulk crystals by exfoliation, providing a path for the study of heterostructures and magnetism in ultrathin crystals down to the monolayer limit.« less

Magnetic behavior and spin-lattice coupling in cleavable van der Waals layered CrCl 3 crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGuire, Michael A.; Clark, Genevieve; KC, Santosh

CrCl 3 is a layered insulator that undergoes a crystallographic phase transition below room temperature and orders antiferromagnetically at low temperature. Weak van der Waals bonding between the layers and ferromagnetic in-plane magnetic order make it a promising material for obtaining atomically thin magnets and creating van der Waals heterostructures. In this work we have grown crystals of CrCl 3, revisited the structural and thermodynamic properties of the bulk material, and explored mechanical exfoliation of the crystals. We find two distinct anomalies in the heat capacity at 14 and 17 K confirming that the magnetic order develops in two stagesmore » on cooling, with ferromagnetic correlations forming before long-range antiferromagnetic order develops between them. This scenario is supported by magnetization data. A magnetic phase diagram is constructed from the heat capacity and magnetization results. We also find an anomaly in the magnetic susceptibility at the crystallographic phase transition, indicating some coupling between the magnetism and the lattice. First-principles calculations accounting for van der Waals interactions also indicate spin-lattice coupling, and find multiple nearly degenerate crystallographic and magnetic structures consistent with the experimental observations. Lastly, we demonstrate that monolayer and few-layer CrCl 3 specimens can be produced from the bulk crystals by exfoliation, providing a path for the study of heterostructures and magnetism in ultrathin crystals down to the monolayer limit.« less

Design of Silicon Photonic Crystal Waveguides for High Gain Raman Amplification Using Two Symmetric Transvers-Electric-Like Slow-Light Modes

NASA Astrophysics Data System (ADS)

Hsiao, Yi-Hua; Iwamoto, Satoshi; Arakawa, Yasuhiko

2013-04-01

We designed silicon photonic crystal (PhC) waveguides (WGs) for efficient silicon Raman amplifiers and lasers. We adopted narrow-width WGs to utilize two symmetric transvers-electric-like (TE-like) guided modes, which permit efficient external coupling for both the pump and Stokes waves. Modifying the size and shape of air holes surrounding the line-defect WG structures could tune the frequency difference between these two modes, at the Brillouin-zone edge, to match the Raman shift of silicon. Thus, small group velocities are also available both for pump and Stokes waves simultaneously, which results in a large enhancement of Raman gain. The enhancement factor of the Raman gain in the designed structure is more than 100 times that reported previously.

Terahertz-wave surface-emitted difference-frequency generation without quasi-phase-matching technique.

PubMed

Avetisyan, Yuri H

2010-08-01

A scheme of terahertz (THz)-wave surface-emitted difference-frequency generation (SEDFG), which lacks the drawbacks associated with the usage of periodically orientation-inverted structures, is proposed. It is shown that both material birefringence of the bulk LiNbO(3) crystal and modal birefringence of GaAs/AlAs waveguide are sufficient to obtain SEDFG up to a frequency of approximately 3THz. The simplicity of the proposed scheme, along with the fact that there is a much smaller THz-wave decay in nonlinear crystal, makes it a good candidate for the practical realization of efficient THz generation. The use of a GaAs waveguide with an oxidized AlAs layer is proposed for enhanced THz-wave SEDFG in the vicinity of the GaAs polariton resonance at 8THz.

Optical lattice-like cladding waveguides by direct laser writing: fabrication, luminescence, and lasing.

PubMed

Nie, Weijie; He, Ruiyun; Cheng, Chen; Rocha, Uéslen; Rodríguez Vázquez de Aldana, Javier; Jaque, Daniel; Chen, Feng

2016-05-15

We report on the fabrication of optical lattice-like waveguide structures in an Nd:YAP laser crystal by using direct femtosecond laser writing. With periodically arrayed laser-induced tracks, the waveguiding cores can be located in either the regions between the neighbored tracks or the central zone surrounded by a number of tracks as outer cladding. The polarization of the femtosecond laser pulses for the inscription has been found to play a critical role in the anisotropic guiding behaviors of the structures. The confocal photoluminescence investigations reveal different stress-induced modifications of the structures inscribed by different polarization of the femtosecond laser beam, which are considered to be responsible for the refractive index changes of the structures. Under optical pump at 808 nm, efficient waveguide lasing at ∼1  μm wavelength has been realized from the optical lattice-like structure, which exhibits potential applications as novel miniature light sources.

Phononic crystal devices

DOEpatents

El-Kady, Ihab F [Albuquerque, NM; Olsson, Roy H [Albuquerque, NM

2012-01-10

Phononic crystals that have the ability to modify and control the thermal black body phonon distribution and the phonon component of heat transport in a solid. In particular, the thermal conductivity and heat capacity can be modified by altering the phonon density of states in a phononic crystal. The present invention is directed to phononic crystal devices and materials such as radio frequency (RF) tags powered from ambient heat, dielectrics with extremely low thermal conductivity, thermoelectric materials with a higher ratio of electrical-to-thermal conductivity, materials with phononically engineered heat capacity, phononic crystal waveguides that enable accelerated cooling, and a variety of low temperature application devices.

Analysis of the Δ(X) - L intervalley mixing in group-IV heterostructures

NASA Astrophysics Data System (ADS)

Kiselev, A. A.; Kim, K. W.; Yablonovitch, E.

2005-06-01

We provide a treatment of the problem of Δ(X) - L intervalley mixing in differently oriented SiGe heterostructures in the transparent effective mass method. Mixing potentials can be calculated, considering changes in the constituent Concentrations of individual heterolayers from some "virtual crystal level" as a bunch of microscopic single-ion perturbations. Strong mixing between lowest localized Δ and L states can be achieved in (113) structures, making them favorable for the electrically controlled gigantic intervalley g factor modulation. We provide estimates for the mixing potential and further consider limitations related to the strength of the in-plane localization and quality of the interface.

High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

NASA Astrophysics Data System (ADS)

Zhen, Dong; Cuiluan, Wang; Hongqi, Jing; Suping, Liu; Xiaoyu, Ma

2013-11-01

To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure (GRIN-SCH) AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Continuous-wave distributed-feedback InGaAsP (λ = 1.55 μm) injection heterolasers

NASA Astrophysics Data System (ADS)

Baryshev, V. I.; Golikova, E. G.; Duraev, V. P.; Kuchinskiĭ, V. I.; Kizhaev, K. Yu; Kuksenkov, D. V.; Portnoĭ, E. L.; Smirnitskiĭ, V. B.

1988-11-01

A study was made of stimulated emission from mesa-stripe distributed-feedback lasers in the form of double heterostructures with separate electron and optical confinement. A diffraction grating with a period Λ = 0.46 μm, formed on the surface of the upper waveguide layer by holographic lithography, ensured distributed feedback in the second order. The threshold current for cw operation at room temperature was 35-70 mA, the shift of the emission wavelength with temperature was ~ 0.08 nm/K, and the feedback coefficient deduced from the width of a "Bragg gap" was 110-150 cm- 1.

Optical Spectroscopy Of Charged Quantum Dot Molecules

NASA Astrophysics Data System (ADS)

Scheibner, M.; Bracker, A. S.; Stinaff, E. A.; Doty, M. F.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2007-04-01

Coupling between two closely spaced quantum dots is observed by means of photoluminescence spectroscopy. Hole coupling is realized by rational crystal growth and heterostructure design. We identify molecular resonances of different excitonic charge states, including the important case of a doubly charged quantum dot molecule.

Effects of superconducting film on the defect mode in dielectric photonic crystal heterostructure

NASA Astrophysics Data System (ADS)

Hu, Chung-An; Liu, Jia-Wei; Wu, Chien-Jang; Yang, Tzong-Jer; Yang, Su-Lin

2013-03-01

Effects of superconducting thin film on the defect mode in a dielectric photonic crystal heterostructure (PCH) are theoretically investigated. The considered structure is (12)NS(21)N, in which both layers 1 and 2 are dielectrics, layer S is a high-temperature superconducting layer, and N is the stack number. The defect mode is analyzed based on the transmission spectrum calculated by using the transfer matrix method. It is found that, in the normal incidence, the defect mode existing in the host PCH of (12)N(21)N will be blue-shifted as the thickness of layer S increases. In addition, the defect mode is also blue-shifted for both TE and TM modes in the case of oblique incidence. The embedded superconducting thin film plays the role of tuning agent for the defect mode of PCH. As a result, the proposed structure can be designed as a tunable narrowband transmission filter which could be of technical use in the optoelectronic applications.

New faces of porous Prussian blue: interfacial assembly of integrated hetero-structures for sensing applications.

PubMed

Kong, Biao; Selomulya, Cordelia; Zheng, Gengfeng; Zhao, Dongyuan

2015-11-21

Prussian blue (PB), the oldest synthetic coordination compound, is a classic and fascinating transition metal coordination material. Prussian blue is based on a three-dimensional (3-D) cubic polymeric porous network consisting of alternating ferric and ferrous ions, which provides facile assembly as well as precise interaction with active sites at functional interfaces. A fundamental understanding of the assembly mechanism of PB hetero-interfaces is essential to enable the full potential applications of PB crystals, including chemical sensing, catalysis, gas storage, drug delivery and electronic displays. Developing controlled assembly methods towards functionally integrated hetero-interfaces with adjustable sizes and morphology of PB crystals is necessary. A key point in the functional interface and device integration of PB nanocrystals is the fabrication of hetero-interfaces in a well-defined and oriented fashion on given substrates. This review will bring together these key aspects of the hetero-interfaces of PB nanocrystals, ranging from structure and properties, interfacial assembly strategies, to integrated hetero-structures for diverse sensing.

All-optical Integrated Switches Based on Azo-benzene Liquid Crystals on Silicon

DTIC Science & Technology

2011-11-01

Glass D263 SU8 Polymer Polymer NLC n̂ n̂ Refractive index @1.55 µm Materials n// = 1.689 n⊥= 1.502 n = 1.575 n = 1.516 E7 Glass D263 SU8 ...In the other case we have a nonlinear LCW based on glass substrates. It consists in a rectangular hollow realized in SU8 photoresist two glass...and discussion 5. All optical polymeric waveguide: methods, assumptions and procedure 6. All optical polymeric waveguide: results and discussion 7

Defect modes in photonic crystal slabs studied using terahertz time-domain spectroscopy.

PubMed

Jian, Zhongping; Pearce, Jeremy; Mittleman, Daniel M

2004-09-01

We describe broadband coherent transmission studies of two-dimensional photonic crystals consisting of a hexagonal array of air holes in a dielectric slab in a planar waveguide. By filling several of the air holes in the photonic crystal slab, we observe the signature of a defect mode within the stop band, in both the amplitude and phase spectra. The experimental results are in reasonable agreement with theoretical calculations using the transfer matrix method.

Spatial frequency maps of power flow in metamaterials and photonic crystals: Investigating backward-wave modes across the electromagnetic spectrum

NASA Astrophysics Data System (ADS)

Aghanejad, Iman; Markley, Loïc

2017-11-01

We present spatial frequency maps of power flow in metamaterials and photonic crystals in order to provide insights into their electromagnetic responses and further our understanding of backward power in periodic structures. Since 2001, many different structures across the electromagnetic spectrum have been presented in the literature as exhibiting an isotropic negative effective index. Although these structures all exhibit circular or spherical equifrequency contours that resemble those of left-handed media, here we show through k -space diagrams that the distribution of power in the spatial frequency domain can vary considerably across these structures. In particular, we show that backward power arises from high-order right-handed harmonics in photonic crystals, magnetodielectric crystals, and across the layers of coupled-plasmonic-waveguide metamaterials, while arising from left-handed harmonic pairs in split-ring resonator and wire composites, plasmonic crystals, and along the layers of coupled-plasmonic-waveguide metamaterials. We also show that the fishnet structure exhibits the same left-handed harmonic pairs as the latter group. These observations allow us to categorize different metamaterials according to their spatial spectral source of backward power and identify the mechanism behind negative refraction at a given interface. Finally, we discuss how k -space maps of power flow can be used to explain the high or low transmittance of power into different metamaterial or photonic crystal structures.

Coherent assembly of heterostructures in ternary and quaternary carbonitrides

NASA Astrophysics Data System (ADS)

Caicedo, J. C.; Aperador, W.; Saldarriaga, W.

2018-05-01

In this study, ternary and quaternary carbonitride heterostructure systems were grown on silicon (100) substrates in order to investigate coherent assembly in TiCN/TiNbCN. The heterostructure films were grown using the reactive r. f. magnetron sputtering technique by systematically varying the bilayer period (Λ) and the bilayer number (n), while maintaining a constant total coating thickness (∼3 μm). The heterostructures were characterized by high angle X-ray diffraction (HA-XRD) and low angle X-ray diffraction, while the TiCN and TiNbCN layers were analyzed by X-ray photoelectron spectroscopy and transmission electron microscopy. The HA-XRD results indicated preferential growth in the face-centered cubic (111) crystal structure for the [TiCN/TiNbCN]n heterostructures. The maximum coherent assembly was observed with the presence of satellite peaks. Thus, ternary and quaternary carbonitride films were designed and deposited on Si (100) substrates with bilayer periods (Λ) in a broad range from nanometers to hundreds of nanometers in order to study the structural evolution and coherent assembly progress as the bilayer thickness decreased. We determined physical properties comprising the critical angle (θc) (0.362°), electronic density (ρe) (0.521 × 1033 el/m3), dispersion coefficient (δ) (0.554 el/m3), and refractive index (n) (0.999944) as functions of the number of bilayers (n).

Quantifying the electronic reconstruction in LaTiO3/LaNiO3/(LaAlO3)3 heterostructures using RIXS

NASA Astrophysics Data System (ADS)

Fabbris, Gilberto; Disa, Ankit S.; Ismail-Beigi, Sohab; Walker, Frederick J.; Ahn, Charles H.; Pelliciari, Jonathan; Huang, Yaobo; Schmitt, Thorsten; Xu, Lei; Hozoi, Liviu; van den Brink, Jeroen; Dean, Mark

A novel approach for manipulating the 3d state in transition metal oxide heterostructures has emerged with the growth of trilayer nickelate LaTiO3/LaNiO3/(LaAlO3)3 (LTNAO). This heterostructure induces a striking reconstruction of the LaNiO3 electronic structure, which is due to a combination of charge transfer from Ti's 3d state and octahedral elongation along the c axis. We use resonant inelastic x-ray scattering (RIXS) experiments at Ni L2,3 and O K edges to spectroscopically resolve the LTNAO electronic structure. Surprisingly, our results show that the octahedral elongation generates minor changes in crystal fields at Ni's 3d state compared to bulk LaNiO3. Instead, heterostructuring creates an anisotropic reconstruction of the Ni 3d - O 2p hybridization. The x2-y2 orbital is significantly more hybridized with O p, leading to a 3z2-r2/x2-y2 hole ratio of ~0.55 and large orbital polarization as measured by x-ray absorption spectroscopy. This work establishes RIXS as an ultra-sensitive probe of complex oxide heterostructures. Work at BNL was supported by the US Department of Energy under Award No DEAC02-98CH10886 and under Early Career Award No 20878.

Hierarchically assembled 3D nanoflowers and 0D nanoparticles of nickel sulfides on reduced graphene oxide with excellent lithium storage performances

NASA Astrophysics Data System (ADS)

Tronganh, Nguyen; Gao, Yang; Jiang, Wei; Tao, Haihua; Wang, Shanshan; Zhao, Bing; Jiang, Yong; Chen, Zhiwen; Jiao, Zheng

2018-05-01

Constructing heterostructure can endow composites with many novel physical and electrochemical properties due to the built-in specific charge transfer dynamics. However, controllable fabrication route to heterostructures is still a great challenge up to now. In this work, a SiO2-assisted hydrothermal method is developed to fabricate heterostructured nickel sulfides/reduced graphene oxide (NiSx/rGO) composite. The SiO2 particles hydrolyzed from tetraethyl orthosilicate could assist the surface controllable co-growth of 3D nanoflowers and 0D nanoparticles of Ni3S2/NiS decorated on reduced graphene oxide, and the possible co-growth mechanism is discussed in detail. In this composite, the heterostructured nanocomposite with different morphologies, chemical compositions and crystal structures, along with varied electronic states and band structure, can promote the interface charge transfer kinetics and lead to excellent lithium storage performances. Electrochemical measurements reveal that the NiSx/rGO composite presents 1187.0 mA h g-1 at 100 mA g-1 and achieves a highly stable capacity of 561.2 mA h g-1 even when the current density is up to 5 A g-1.

Re-addressable Interconnects with Light-Induced Waveguides in Liquid Crystals

DTIC Science & Technology

2011-08-09

average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data...15. SUBJECT TERMS EOARD, Liquid Crystals, Laser beam control 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT...external stimuli, their performance is far from optimal: their response time can be larger than 100ms and they exhibit transverse fluctuations due

Étude expérimentale de cristaux photoniques bi-dimensionnels

NASA Astrophysics Data System (ADS)

Labilloy, D.

Experimental study of two-dimensional photonic crystals Photonic bandgap materials (PBGs), the so-called photonic crystals, are structures with a periodic dielectric constant. For strong enough index contrast, it was theoretically predicted that they should prevent light propagation in all directions, because they create spectral regions with zero-density of states. We study the optical properties of two-dimensional photonic crystals etched through waveguiding semiconductor heterostructures. Photoluminescence of quantum wells or quantum dots embedded in the waveguide are used as internal probe source. This technique allows a full characterization of these objects, giving access to quantitative values of the transmission, reflection and diffraction coefficients. Weak transmissions correspond to high reflection or diffraction values, which indicates that light remains guided upon interaction with the crystals, confirming their high potential for integrated optics. These reflectors are next used as cavity mirrors. One-dimensional cavities demonstrate a high finesse through transmission measurements, confirming the low amount of out-of-plane losses. Small volume three-dimensional cavities (sim5 μm^3) are also probed, using the photoluminescence of the emitters placed inside the cavity. Narrow peaks in the photoluminescence spectrum prove the strong confinement and allow to envision applications for spontaneous emission control. Les matériaux à bande interdite de photons (BIPs) ou cristaux photoniques, sont des structures, généralement artificielles, dont l'indice diélectrique varie périodiquement. Lorsque le contraste d'indice est fort, on prédit théoriquement qu'elles doivent empêcher la propagation de la lumière dans toutes les directions en créant des plages spectrales (les bandes interdites) à densité d'état de photons nulle. Nous avons étudié le comportement optique de cristaux photoniques bidimensionnels gravés dans des hétérostructures semiconductrices guidantes. L'originalité consiste à utiliser la photoluminescence de boîtes ou puits quantiques comme source lumineuse interne. Cette technique a permis d'effectuer une caractérisation complète de ces objets en mesurant quantitativement les coefficients de transmission et de réflexion ainsi que les propriétés de diffraction. Aux zones de faible transmission correspondent de forts coefficients de réflexion ou de diffraction, ce qui indique que l'onde reste guidée lors de l'interaction avec les cristaux et confirme leur fort potentiel pour l'optique intégrée. Nous avons utilisé ces réflecteurs pour réaliser des cavités, d'abord unidimensionnelles, qui montrent une bonne finesse en transmission, confirmant que les pertes hors du plan du guide sont faibles. Nous avons ensuite étudié des cavités tridimensionnelles de faible volume (sim 5 μm^3), sondées cette fois-ci à l'aide d'émetteurs internes à la cavité. L'apparition de pics étroits montre que l'effet de confinement est important et laisse présager de réelles potentialités de modification de l'émission spontanée.

Theoretical and experimental investigations of asymmetric light transport in graded index photonic crystal waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Giden, I. H., E-mail: igiden@etu.edu.tr; Yilmaz, D.; Turduev, M.

To provide asymmetric propagation of light, we propose a graded index photonic crystal (GRIN PC) based waveguide configuration that is formed by introducing line and point defects as well as intentional perturbations inside the structure. The designed system utilizes isotropic materials and is purely reciprocal, linear, and time-independent, since neither magneto-optical materials are used nor time-reversal symmetry is broken. The numerical results show that the proposed scheme based on the spatial-inversion symmetry breaking has different forward (with a peak value of 49.8%) and backward transmissions (4.11% at most) as well as relatively small round-trip transmission (at most 7.11%) in amore » large operational bandwidth of 52.6 nm. The signal contrast ratio of the designed configuration is above 0.80 in the telecom wavelengths of 1523.5–1576.1 nm. An experimental measurement is also conducted in the microwave regime: A strong asymmetric propagation characteristic is observed within the frequency interval of 12.8 GHz–13.3 GHz. The numerical and experimental results confirm the asymmetric transmission behavior of the proposed GRIN PC waveguide.« less

Atom-atom interactions around the band edge of a photonic crystal waveguide.

PubMed

Hood, Jonathan D; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E; Kimble, H J

2016-09-20

Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields [Formula: see text] outside the bandgap to localized fields [Formula: see text] within the bandgap should be accompanied by a transition from largely dissipative atom-atom interactions to a regime where dispersive atom-atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the [Formula: see text] line of atomic cesium for [Formula: see text] atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom-atom interactions with low dissipation into the guided mode.

A modified hexagonal photonic crystal fiber for terahertz applications

NASA Astrophysics Data System (ADS)

Islam, Md. Saiful; Sultana, Jakeya; Faisal, Mohammad; Islam, Mohammad Rakibul; Dinovitser, Alex; Ng, Brian W.-H.; Abbott, Derek

2018-05-01

We present a Zeonex based highly birefringent and dispersion flattened porous core photonic crystal fiber (PC-PCF) for polarization preserving applications in the terahertz region. In order to facilitate birefringence, an array of elliptical shaped air holes surrounded by porous cladding is introduced. The porous cladding comprises circular air-holes in a modified hexagonal arrangement. The transmission characteristics of the proposed PCF are investigated using a full-vector finite element method with perfectly matched layer (PML) absorbing boundary conditions. Simulation results show a high birefringence of 0.086 and an ultra-flattened dispersion variation of ± 0.03 ps/THz/cm at optimal design parameters. Besides, a number of other important wave-guiding properties including frequency dependence of the effective material loss (EML), confinement loss, and effective area are also investigated to assess the fiber's effectiveness as a terahertz waveguide.

Subdiffractional focusing and guiding of polaritonic rays in a natural hyperbolic material

PubMed Central

Dai, S.; Ma, Q.; Andersen, T.; Mcleod, A. S.; Fei, Z.; Liu, M. K.; Wagner, M.; Watanabe, K.; Taniguchi, T.; Thiemens, M.; Keilmann, F.; Jarillo-Herrero, P.; Fogler, M. M.; Basov, D. N.

2015-01-01

Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. In such materials, light propagation is unusual leading to novel and often non-intuitive optical phenomena. Here we report infrared nano-imaging experiments demonstrating that crystals of hexagonal boron nitride, a natural mid-infrared hyperbolic material, can act as a ‘hyper-focusing lens' and as a multi-mode waveguide. The lensing is manifested by subdiffractional focusing of phonon–polaritons launched by metallic disks underneath the hexagonal boron nitride crystal. The waveguiding is revealed through the modal analysis of the periodic patterns observed around such launchers and near the sample edges. Our work opens new opportunities for anisotropic layered insulators in infrared nanophotonics complementing and potentially surpassing concurrent artificial hyperbolic materials with lower losses and higher optical localization. PMID:25902364

Investigation of phase matching for third-harmonic generation in silicon slow light photonic crystal waveguides using Fourier optics.

PubMed

Monat, Christelle; Grillet, Christian; Corcoran, Bill; Moss, David J; Eggleton, Benjamin J; White, Thomas P; Krauss, Thomas F

2010-03-29

Using Fourier optics, we retrieve the wavevector dependence of the third-harmonic (green) light generated in a slow light silicon photonic crystal waveguide. We show that quasi-phase matching between the third-harmonic signal and the fundamental mode is provided in this geometry by coupling to the continuum of radiation modes above the light line. This process sustains third-harmonic generation with a relatively high efficiency and a substantial bandwidth limited only by the slow light window of the fundamental mode. The results give us insights into the physics of this nonlinear process in the presence of strong absorption and dispersion at visible wavelengths where bandstructure calculations are problematic. Since the characteristics (e.g. angular pattern) of the third-harmonic light primarily depend on the fundamental mode dispersion, they could be readily engineered.

Superradiance for Atoms Trapped along a Photonic Crystal Waveguide

NASA Astrophysics Data System (ADS)

Goban, A.; Hung, C.-L.; Hood, J. D.; Yu, S.-P.; Muniz, J. A.; Painter, O.; Kimble, H. J.

2015-08-01

We report observations of superradiance for atoms trapped in the near field of a photonic crystal waveguide (PCW). By fabricating the PCW with a band edge near the D1 transition of atomic cesium, strong interaction is achieved between trapped atoms and guided-mode photons. Following short-pulse excitation, we record the decay of guided-mode emission and find a superradiant emission rate scaling as Γ¯SR∝N ¯Γ1 D for average atom number 0.19 ≲N ¯≲2.6 atoms, where Γ1 D/Γ'=1.0 ±0.1 is the peak single-atom radiative decay rate into the PCW guided mode, and Γ' is the radiative decay rate into all the other channels. These advances provide new tools for investigations of photon-mediated atom-atom interactions in the many-body regime.

Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (0 0 1) substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kumagai, Y.; Imada, S.; Baba, T.; Kobayashi, M.

2011-05-01

ZnMgTe/ZnTe/ZnMgTe layered structures were grown on (0 0 1) ZnTe substrates by molecular beam epitaxy. This structure was designed to apply to waveguides in various optoelectronic devices to reduce light loss. Since the lattice mismatch between ZnTe and ZnMgTe was not negligible, the critical layer thickness (CLT) was theoretically derived. Structures with varying Mg composition and layer thickness of ZnMgTe cladding layer were grown and examined for crystal quality with respect to theoretical data. The crystal quality was investigated by means of cross sectional transmission electron microscopy (TEM) and reciprocal space mapping (RSM). Optical confinements were observed by irradiating a laser beam from one end of the sample and monitoring the transmitted light from the other end.

Aluminum gallium nitride-cladding-free nonpolar m-plane gallium nitride-based laser diodes

NASA Astrophysics Data System (ADS)

Schmidt, Mathew Corey

The recent demonstration of nonpolar GaN laser diode operation along with rapid device improvements signal a paradigm shift in GaN-based optoelectronic technology. Up until now, GaN optoelectronics have been trapped on the c-plane facet, where built-in polarization fields place limitations on device design and performance. The advent of bulk GaN substrates has allowed for the full exploration of not only the nonpolar m-plane facet, but all crystal orientations of GaN. This dissertation focuses on the development of some of the world's first nonpolar m-plane GaN laser diodes as well as on the AlGaN-cladding-free concept invented at UCSB. The absence of built-in electric fields allows for thicker quantum wells (≥8 nm) than those allowed on c-plane which improves the optical waveguiding characteristics and eliminates the need for AlGaN cladding layers. The benefits of this design include more uniform growth, more reproducible growth, no tensile cracking, lower operating voltages and currents, and higher yields. The first iteration of device design optimization is presented. Design and growth aspects investigated include quantum well number, quantum well thickness, Mg doping of the p-GaN cladding, aluminum composition of the AlGaN cladding layer and the implementation of an InGaN separate confined heterostructure. These optimizations led to threshold current densities as low as 2.4 kA/cm2.

Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials

NASA Astrophysics Data System (ADS)

Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R.; Hao, Xiaotao; Chen, Feng

2017-04-01

We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO2). The unique feature of VO2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS2) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO2 as low-cost saturable absorber for subnanosecond laser generation.

Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials.

PubMed

Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R; Hao, Xiaotao; Chen, Feng

2017-04-06

We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO 4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO 2 ). The unique feature of VO 2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO 4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO 2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS 2 ) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO 2 as low-cost saturable absorber for subnanosecond laser generation.

Photonic Switching Devices Using Light Bullets

NASA Technical Reports Server (NTRS)

Goorjian, Peter M. (Inventor)

1999-01-01

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Poplawsky, Jonathan D.

Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martens, M.; Kuhn, C.; Ziffer, E.

2016-04-11

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulkmore » layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.« less

Toward hybrid Au nanorods @ M (Au, Ag, Pd and Pt) core-shell heterostructures for ultrasensitive SERS probes

NASA Astrophysics Data System (ADS)

Xie, Xiaobin; Gao, Guanhui; Kang, Shendong; Lei, Yanhua; Pan, Zhengyin; Shibayama, Tamaki; Cai, Lintao

2017-06-01

Being able to precisely control the morphologies of noble metallic nanostructures is of essential significance for promoting the surface-enhanced Raman scattering (SERS) effect. Herein, we demonstrate an overgrowth strategy for synthesizing Au @ M (M = Au, Ag, Pd, Pt) core-shell heterogeneous nanocrystals with an orientated structural evolution and highly improved properties by using Au nanorods as seeds. With the same reaction condition system applied, we obtain four well-designed heterostructures with diverse shapes, including Au concave nanocuboids (Au CNs), Au @ Ag crystalizing face central cube nanopeanuts, Au @ Pd porous nanocuboids and Au @ Pt nanotrepangs. Subsequently, the exact overgrowth mechanism of the above heterostructural building blocks is further analysed via the systematic optimiziation of a series of fabrications. Remarkably, the well-defined Au CNs and Au @ Ag nanopeanuts both exhibit highly promoted SERS activity. We expect to be able to supply a facile strategy for the fabrication of multimetallic heterogeneous nanostructures, exploring the high SERS effect and catalytic activities.

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

NASA Astrophysics Data System (ADS)

Yamasaki, Yuji; Moriya, Rai; Arai, Miho; Masubuchi, Satoru; Pyon, Sunseng; Tamegai, Tsuyoshi; Ueno, Keiji; Machida, Tomoki

2017-12-01

Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature T C ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction.

Ferroelectricity-induced resistive switching in Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

NASA Astrophysics Data System (ADS)

Md. Sadaf, Sharif; Mostafa Bourim, El; Liu, Xinjun; Hasan Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

2012-03-01

We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

Fabrication of lateral lattice-polarity-inverted GaN heterostructure

NASA Astrophysics Data System (ADS)

Katayama, Ryuji; Kuge, Yoshihiro; Kondo, Takashi; Onabe, Kentaro

2007-04-01

Fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0 0 0 1) using a radio-frequency plasma enhanced molecular beam epitaxy is demonstrated. Its microscopic properties, which are closely related to the local polarity distribution, such as surface potentials, piezoelectric polarizations and residual carrier concentrations were investigated by Kelvin force microscopy and micro-Raman scattering. The successful inversion from Ga-polarity to N-polarity of GaN in a specific domain and its higher crystal perfection had been confirmed clearly by these microscopic analyses. The results were also fairly consistent with that of KOH etching experiments, which suggest the applicability of these processes to the fabrication of photonic nanostructures composed of nitride semiconductors.

Removal of GaAs growth substrates from II-VI semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

2014-04-01

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(0 0 1) heterostructures

NASA Astrophysics Data System (ADS)

Bolkhovityanov, Yu. B.; Deryabin, A. S.; Gutakovskii, A. K.; Sokolov, L. V.

2018-02-01

Edge dislocations in face-centered crystals are formed from two mixed dislocations gliding along intersecting {1 -1 1} planes, forming the so-called Lomer locks. This process, which is called zipping, is energetically beneficial. It is experimentally demonstrated in this paper that a reverse process may occur in Ge/GeSi strained buffer/Si(0 0 1) heterostructures under certain conditions, namely, decoupling of two 60° dislocations that formed the Lomer-type dislocation, i.e., unzipping. It is assumed that the driving force responsible for separation of Lomer dislocations into two 60° dislocations is the strain remaining in the GeSi buffer layer.

Current transport mechanism in graphene/AlGaN/GaN heterostructures with various Al mole fractions

NASA Astrophysics Data System (ADS)

Pandit, Bhishma; Seo, Tae Hoon; Ryu, Beo Deul; Cho, Jaehee

2016-06-01

The current transport mechanism of graphene formed on AlxGa1-xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current-voltage measurement from graphene to AlGaN/GaN shows an excellent rectifying property. The extracted Schottky barrier height of the graphene/AlGaN/GaN contacts increases with the Al mole fraction in AlGaN. However, the current transport mechanism deviates from the Schottky-Mott theory owing to the deterioration of AlGaN crystal quality at high Al mole fractions confirmed by reverse leakage current measurement.

Magneto-photonic crystal optical sensors with sensitive covers

NASA Astrophysics Data System (ADS)

Dissanayake, Neluka; Levy, Miguel; Chakravarty, A.; Heiden, P. A.; Chen, N.; Fratello, V. J.

2011-08-01

We report on a magneto-photonic crystal on-chip optical sensor for specific analyte detection with polypyrrole and gold nano particles as modified photonic crystal waveguide cover layers. The reaction of the active sensor material with various analytes modifies the electronic structure of the sensor layer causing changes in its refractive index and a strong transduction signal. Magneto-photonic crystal enhanced polarization rotation sensitive to the nature of the cover layer detects the index modification upon analyte adsorption. A high degree of selectivity and sensitivity are observed for aqueous ammonia and methanol with polypyrrole and for thiolated-gold- with gold-nanoparticles covers.

Frequency splitter based on the directional emission from surface modes in dielectric photonic crystal structures.

PubMed

Tasolamprou, Anna C; Zhang, Lei; Kafesaki, Maria; Koschny, Thomas; Soukoulis, Costas M

2015-06-01

We demonstrate the numerical design and the experimental validation of frequency dependent directional emission from a dielectric photonic crystal structure. The wave propagates through a photonic crystal line-defect waveguide, while a surface layer at the termination of the photonic crystal enables the excitation of surface modes and a subsequent grating layer transforms the surface energy into outgoing propagating waves of the form of a directional beam. The angle of the beam is controlled by the frequency and the structure operates as a frequency splitter in the intermediate and far field region.

Frequency splitter based on the directional emission from surface modes in dielectric photonic crystal structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tasolamprou, Anna C.; Zhang, Lei; Kafesaki, Maria

2015-05-19

We demonstrate the numerical design and the experimental validation of frequency dependent directional emission from a dielectric photonic crystal structure. The wave propagates through a photonic crystal line-defect waveguide, while a surface layer at the termination of the photonic crystal enables the excitation of surface modes and a subsequent grating layer transforms the surface energy into outgoing propagating waves of the form of a directional beam. Furthermore, the angle of the beam is controlled by the frequency and the structure operates as a frequency splitter in the intermediate and far field region.

Photonic crystal devices formed by a charged-particle beam

DOEpatents

Lin, Shawn-Yu; Koops, Hans W. P.

2000-01-01

A photonic crystal device and method. The photonic crystal device comprises a substrate with at least one photonic crystal formed thereon by a charged-particle beam deposition method. Each photonic crystal comprises a plurality of spaced elements having a composition different from the substrate, and may further include one or more impurity elements substituted for spaced elements. Embodiments of the present invention may be provided as electromagnetic wave filters, polarizers, resonators, sources, mirrors, beam directors and antennas for use at wavelengths in the range from about 0.2 to 200 microns or longer. Additionally, photonic crystal devices may be provided with one or more electromagnetic waveguides adjacent to a photonic crystal for forming integrated electromagnetic circuits for use at optical, infrared, or millimeter-wave frequencies.

Recent advances and progress in photonic crystal-based gas sensors

NASA Astrophysics Data System (ADS)

Goyal, Amit Kumar; Sankar Dutta, Hemant; Pal, Suchandan

2017-05-01

This review covers the recent progress made in the photonic crystal-based sensing technology for gas sensing applications. Photonic crystal-based sensing has tremendous potential because of its obvious advantages in sensitivity, stability, miniaturisation, portability, online use, remote monitoring etc. Several 1D and 2D photonic crystal structures including photonic crystal waveguides and cavities for gas sensing applications have been discussed in this review. For each kind of photonic crystal structure, the novelty, measurement principle and their respective gas sensing properties are presented. The reported works and the corresponding results predict the possibility to realize a commercially viable miniaturized and highly sensitive photonic crystal-based optical gas sensor having flexibility in the structure of ultra-compact size with excellent sensing properties.

Organization of the Integrated Photonics Topical Meeting Held in Victoria, British Columbia on 30 March-1 April 1998. Technical Digest Series. Volume 4. Postconference Edition

DTIC Science & Technology

1999-03-22

amplifiers fabricated on Si substrates by co- sputtering, (p. 27) 11:30am IMC3 ■ Birefrlngent oxidized porous silicon-based optical waveguides, Yu. N...that integrated optical waveguides based on oxidized porous silicon have a relatively large birefringence. As a result, the modes of both... Membrane microresonator lasers with 2-D photonic bandgap crystal mirrors for compact in- plane optics, B. D’Urso, O. Painter, A. Yariv, A. Scherer

Tunable, continuous-wave Ti:sapphire channel waveguide lasers written by femtosecond and picosecond laser pulses.

PubMed

Grivas, Christos; Corbari, Costantino; Brambilla, Gilberto; Lagoudakis, Pavlos G

2012-11-15

Fabrication and cw lasing at 798.25 nm is reported for femtosecond (fs) and picosecond (ps) laser-inscribed channel waveguides in Ti:sapphire crystals. Lasing in channels written by fs (ps) pulses was obtained above a threshold of 84 mW (189 mW) with a maximum output power and a slope efficiency of 143 mW (45 mW) and 23.5% (7.1%), respectively. The emission wavelength was tuned over a 170 nm range by using a birefringent filter in an external cavity.

Optical Study of 2D Photonic Crystals in an InP/GaInAsP Slab Waveguide Structure

DTIC Science & Technology

2002-01-01

the values n,,,,. = 3.35 and n, ,, = 3.17 are assumed for the refraction index of GaInAsP and InP, respectively. The resulting structure is a multimode...contributes to increase out-of- plane scattering. On the other hand, when entering the PC, the hole pattern is felt as a low refractive index contrast...in an InP/GaInAsP step- index waveguide. Transmission (T) measurements through simple PC slabs and through one-dimensional (1D) Fabry-P6rot (FP

Aligned TiO₂ nanotube/nanoparticle heterostructures with enhanced electrochemical performance as three-dimensional anode for lithium-ion microbatteries.

PubMed

Xie, Keyu; Guo, Min; Lu, Wei; Huang, Haitao

2014-11-14

A novel TiO₂ three-dimensional (3D) anode with an aligned TiO₂ nanotube/nanoparticle heterostructure (TiO₂ NTs/NPs) is developed by simply immersing as-anodized TiO₂ NTs into water and further crystallizing the TiO₂ NTs by post-annealing. The heterostructure, with its core in a tubular morphology and with both the outer and inner surface consisting of nanoparticles, is confirmed by FESEM and TEM. A reversible areal capacity of 0.126 mAh · cm(-2) is retained after 50 cycles for the TiO₂ NTs/NPs heterostructure electrode, which is higher than that of the TiO₂ NTs electrode (0.102 mAh · cm(-2) after 50 cycles). At the current densities of 0.02, 0.04, 0.06, 0.08, 0.10 and 0.20 mA · cm(-2), the areal capacities are 0.142, 0.127, 0.117, 0.110, 0.104 and 0.089 mAh · cm(-2), respectively, for the TiO₂ NTs/NPs heterostructure electrode compared to the areal capacities of 0.123, 0.112, 0.105, 0.101, 0.094 and 0.083 mAh · cm(-2), respectively, for the the TiO₂ NTs electrode. The enhanced electrochemical performance is attributed to the unique microstructure of the TiO₂ NTs/NPs heterostructure electrode with the TiO₂ NT core used as a straight pathway for electronic transport and with TiO₂ NP offering enhanced surface areas for facile Li+ insertion/extraction. The results described here inspire a facile approach to fabricate a 3D anode with an enhanced electrochemical performance for lithium-ion microbattery applications.

Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

PubMed

Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

2011-06-20

We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

Nanoimaging of resonating hyperbolic polaritons in linear boron nitride antennas

PubMed Central

Alfaro-Mozaz, F. J.; Alonso-González, P.; Vélez, S.; Dolado, I.; Autore, M.; Mastel, S.; Casanova, F.; Hueso, L. E.; Li, P.; Nikitin, A. Y.; Hillenbrand, R.

2017-01-01

Polaritons in layered materials—including van der Waals materials—exhibit hyperbolic dispersion and strong field confinement, which makes them highly attractive for applications including optical nanofocusing, sensing and control of spontaneous emission. Here we report a near-field study of polaritonic Fabry–Perot resonances in linear antennas made of a hyperbolic material. Specifically, we study hyperbolic phonon–polaritons in rectangular waveguide antennas made of hexagonal boron nitride (h-BN, a prototypical van der Waals crystal). Infrared nanospectroscopy and nanoimaging experiments reveal sharp resonances with large quality factors around 100, exhibiting atypical modal near-field patterns that have no analogue in conventional linear antennas. By performing a detailed mode analysis, we can assign the antenna resonances to a single waveguide mode originating from the hybridization of hyperbolic surface phonon–polaritons (Dyakonov polaritons) that propagate along the edges of the h-BN waveguide. Our work establishes the basis for the understanding and design of linear waveguides, resonators, sensors and metasurface elements based on hyperbolic materials and metamaterials. PMID:28589941

On-Chip Waveguide Coupling of a Layered Semiconductor Single-Photon Source.

PubMed

Tonndorf, Philipp; Del Pozo-Zamudio, Osvaldo; Gruhler, Nico; Kern, Johannes; Schmidt, Robert; Dmitriev, Alexander I; Bakhtinov, Anatoly P; Tartakovskii, Alexander I; Pernice, Wolfram; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf

2017-09-13

Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on Si 3 N 4 rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the Si 3 N 4 waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.

A dynamic and ultrafast group delay tuning mechanism in two microcavities side-coupled with a waveguide system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Boyun; Wang, Tao, E-mail: wangtao@hust.edu.cn; Tang, Jian

2014-10-07

We theoretically propose a dynamic and ultrafast group delay tuning mechanism in two microcavities side-coupled to a waveguide system through external optical pump beams. The optical Kerr effect modulation method is applied to improve tuning rate with response time of subpicoseconds or even femtoseconds. The group delay of an all-optical analog to electromagnetically induced transparency effect can be controlled by tuning either the frequency of photonic crystal microcavities or the propagation phase of line waveguide. Group delay is controlled between 5.88 and 70.98 ps by dynamically tuning resonant frequencies of the microcavities. Alternatively, the group delay is controlled between 1.86more » and 12.08 ps by dynamically tuning the propagation phase of line waveguide. All observed schemes are analyzed rigorously through finite-difference time-domain simulations and coupled-mode formalism. Results show a new direction toward microstructure integration optical pulse trapping and all-optical dynamical storage of light devices in optical communication and quantum information processing.« less

Photonics-on-a-chip: recent advances in integrated waveguides as enabling detection elements for real-world, lab-on-a-chip biosensing applications.

PubMed

Washburn, Adam L; Bailey, Ryan C

2011-01-21

By leveraging advances in semiconductor microfabrication technologies, chip-integrated optical biosensors are poised to make an impact as scalable and multiplexable bioanalytical measurement tools for lab-on-a-chip applications. In particular, waveguide-based optical sensing technology appears to be exceptionally amenable to chip integration and miniaturization, and, as a result, the recent literature is replete with examples of chip-integrated waveguide sensing platforms developed to address a wide range of contemporary analytical challenges. As an overview of the most recent advances within this dynamic field, this review highlights work from the last 2-3 years in the areas of grating-coupled, interferometric, photonic crystal, and microresonator waveguide sensors. With a focus towards device integration, particular emphasis is placed on demonstrations of biosensing using these technologies within microfluidically controlled environments. In addition, examples of multiplexed detection and sensing within complex matrices--important features for real-world applicability--are given special attention.

Spontaneous doping on high quality talc-graphene-hBN van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Mania, E.; Alencar, A. B.; Cadore, A. R.; Carvalho, B. R.; Watanabe, K.; Taniguchi, T.; Neves, B. R. A.; Chacham, H.; Campos, L. C.

2017-09-01

Steady doping, added to its remarkable electronic properties, would make graphene a valuable commodity in the solar cell market, as energy power conversion could be substantially increased. Here we report a graphene van der Waals heterostructure which is able to spontaneously dope graphene (p-type) up to n ~ 2.2  ×  1013 cm-2 while providing excellent charge mobility (μ ~ 25 000 cm2 V-1 s-1). Such properties are achieved via deposition of graphene on atomically flat layered talc, a natural and abundant dielectric crystal. Raman investigation shows a preferential charge accumulation on graphene-talc van der Waals heterostructures, which are investigated through the electronic properties of talc/graphene/hBN heterostructure devices. These heterostructures preserve graphene’s good electronic quality, verified by the observation of quantum Hall effect at low magnetic fields (B  =  0.4 T) at T  =  4.2 K. In order to investigate the physical mechanisms behind graphene-on-talc p-type doping, we performed first-principles calculations of their interface structural and electronic properties. In addition to potentially improving solar cell efficiency, graphene doping via van der Waals stacking is also a promising route towards controlling the band gap opening in bilayer graphene, promoting a steady n or p type doping in graphene and, eventually, providing a new path to access superconducting states in graphene, predicted to exist only at very high doping.

Confocal Raman imaging of optical waveguides in LiNbO3 fabricated by ultrafast high-repetition rate laser-writing.

PubMed

Ródenas, Airán; Nejadmalayeri, Amir H; Jaque, Daniel; Herman, Peter

2008-09-01

We report on the confocal Raman characterization of the micro-structural lattice changes induced during the high-repetition rate ultrafast laser writing of buried optical waveguides in lithium niobate (LiNbO(3)) crystals. While the laser beam focal volume is characterized by a significant lattice expansion together with a high defect concentration, the adjacent waveguide zone is largely free of defects, undergoing only slight rearrangement of the oxygen octahedron in the LiNbO(3) lattice. The close proximity of these two zones has been found responsible for the propagation losses of the guided light. Subjacent laser-induced periodic micro-structures have been also observed inside the laser focal volume, and identified with a strong periodic distribution of lattice defects.

One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

NASA Astrophysics Data System (ADS)

Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

2018-01-01

Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the junctions. Our new approach offers greater flexibility and control than previous methods for continuous growth of transition-metal-dichalcogenide-based multi-junction lateral heterostructures. These findings could be extended to other families of two-dimensional materials, and establish a foundation for the development of complex and atomically thin in-plane superlattices, devices and integrated circuits.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

Terahertz Quantum Cascade Laser With Efficient Coupling and Beam Profile

NASA Technical Reports Server (NTRS)

Chattopadhyay, Goutam; Kawamura, Jonathan H.; Lin, Robert H.; Williams, Benjamin

2012-01-01

Quantum cascade lasers (QCLs) are unipolar semiconductor lasers, where the wavelength of emitted radiation is determined by the engineering of quantum states within the conduction band in coupled multiple-quantum-well heterostructures to have the desired energy separation. The recent development of terahertz QCLs has provided a new generation of solid-state sources for radiation in the terahertz frequency range. Terahertz QCLs have been demonstrated from 0.84 to 5.0 THz both in pulsed mode and continuous wave mode (CW mode). The approach employs a resonant-phonon depopulation concept. The metal-metal (MM) waveguide fabrication is performed using Cu-Cu thermo-compression bonding to bond the GaAs/AlGaAs epitaxial layer to a GaAs receptor wafer.

Unambiguous demonstration of soliton evolution in slow-light silicon photonic crystal waveguides with SFG-XFROG.

PubMed

Li, Xiujian; Liao, Jiali; Nie, Yongming; Marko, Matthew; Jia, Hui; Liu, Ju; Wang, Xiaochun; Wong, Chee Wei

2015-04-20

We demonstrate the temporal and spectral evolution of picosecond soliton in the slow light silicon photonic crystal waveguides (PhCWs) by sum frequency generation cross-correlation frequency resolved optical grating (SFG-XFROG) and nonlinear Schrödinger equation (NLSE) modeling. The reference pulses for the SFG-XFROG measurements are unambiguously pre-characterized by the second harmonic generation frequency resolved optical gating (SHG-FROG) assisted with the combination of NLSE simulations and optical spectrum analyzer (OSA) measurements. Regardless of the inevitable nonlinear two photon absorption, high order soliton compressions have been observed remarkably owing to the slow light enhanced nonlinear effects in the silicon PhCWs. Both the measurements and the further numerical analyses of the pulse dynamics indicate that, the free carrier dispersion (FCD) enhanced by the slow light effects is mainly responsible for the compression, the acceleration, and the spectral blue shift of the soliton.

Integrable microwave filter based on a photonic crystal delay line.

PubMed

Sancho, Juan; Bourderionnet, Jerome; Lloret, Juan; Combrié, Sylvain; Gasulla, Ivana; Xavier, Stephane; Sales, Salvador; Colman, Pierre; Lehoucq, Gaelle; Dolfi, Daniel; Capmany, José; De Rossi, Alfredo

2012-01-01

The availability of a tunable delay line with a chip-size footprint is a crucial step towards the full implementation of integrated microwave photonic signal processors. Achieving a large and tunable group delay on a millimetre-sized chip is not trivial. Slow light concepts are an appropriate solution, if propagation losses are kept acceptable. Here we use a low-loss 1.5 mm-long photonic crystal waveguide to demonstrate both notch and band-pass microwave filters that can be tuned over the 0-50-GHz spectral band. The waveguide is capable of generating a controllable delay with limited signal attenuation (total insertion loss below 10 dB when the delay is below 70 ps) and degradation. Owing to the very small footprint of the delay line, a fully integrated device is feasible, also featuring more complex and elaborate filter functions.

Atom–atom interactions around the band edge of a photonic crystal waveguide

PubMed Central

Hood, Jonathan D.; Goban, Akihisa; Asenjo-Garcia, Ana; Lu, Mingwu; Yu, Su-Peng; Chang, Darrick E.; Kimble, H. J.

2016-01-01

Tailoring the interactions between quantum emitters and single photons constitutes one of the cornerstones of quantum optics. Coupling a quantum emitter to the band edge of a photonic crystal waveguide (PCW) provides a unique platform for tuning these interactions. In particular, the cross-over from propagating fields E(x)∝e±ikxx outside the bandgap to localized fields E(x)∝e−κx|x| within the bandgap should be accompanied by a transition from largely dissipative atom–atom interactions to a regime where dispersive atom–atom interactions are dominant. Here, we experimentally observe this transition by shifting the band edge frequency of the PCW relative to the D1 line of atomic cesium for N¯=3.0±0.5 atoms trapped along the PCW. Our results are the initial demonstration of this paradigm for coherent atom–atom interactions with low dissipation into the guided mode. PMID:27582467

Slow-light transmission with high group index and large normalized delay bandwidth product through successive defect rods on intrinsic photonic crystal waveguide

NASA Astrophysics Data System (ADS)

Elshahat, Sayed; Khan, Karim; Yadav, Ashish; Bibbò, Luigi; Ouyang, Zhengbiao

2018-07-01

We proposed a strategy with successive cavities as energy reservoirs of electromagnetic energy and light-speed reducers introduced in the first and second rows of rods on the walls of an intrinsic photonic crystal waveguide (PCW) for slow-light transmission in the PCW concerning applications for optical communication, optical computation and optical signal processing. Subsequently, plane-wave expansion method (PWE) is used for studying slow-light properties and finite-difference time-domain (FDTD) method to demonstrate the slow-light propagating property of our proposed structure. We obtained group index as exceedingly large as 6123 with normalized delay bandwidth product (NDBP) as high as 0.48. We designed a facile but more generalized structure that may provide a vital theoretical basis for further enhancing the storage capacity properties of slow light with wideband and high NDBP.

Compact photonic crystal circulator with flat-top transmission band created by cascading magneto-optical resonance cavities.

PubMed

Wang, Qiong; Ouyang, Zhengbiao; Lin, Mi; Liu, Qiang

2015-11-20

A new type of compact three-port circulator with flat-top transmission band (FTTB) in a two-dimensional photonic crystal has been proposed, through coupling the cascaded magneto-optical resonance cavities to waveguides. The coupled-mode theory is applied to investigate the coupled structure and analyze the condition to achieve FTTB. According to the theoretical analysis, the structure is further optimized to ensure that the condition for achieving FTTB can be satisfied for both cavity-cavity coupling and cavity-waveguide coupling. Through the finite-element method, it is demonstrated that the design can realize a high quality, nonreciprocal circulating propagation of waves with an insertion loss of 0.023 dB and an isolation of 23.3 dB, covering a wide range of operation frequency. Such a wideband circulator has potential applications in large-scale integrated photonic circuits for guiding or isolating harmful optical reflections from load elements.

GaN microring waveguide resonators bonded to silicon substrate by a two-step polymer process.

PubMed

Hashida, Ryohei; Sasaki, Takashi; Hane, Kazuhiro

2018-03-20

Using a polymer bonding technique, GaN microring waveguide resonators were fabricated on a Si substrate for future hybrid integration of GaN and Si photonic devices. The designed GaN microring consisted of a rib waveguide having a core of 510 nm in thickness, 1000 nm in width, and a clad of 240 nm in thickness. A GaN crystalline layer of 1000 nm in thickness was grown on a Si(111) substrate by metal organic chemical vapor deposition using a buffer layer of 300 nm in thickness for the compensation of lattice constant mismatch between GaN and Si crystals. The GaN/Si wafer was bonded to a Si(100) wafer by a two-step polymer process to prevent it from trapping air bubbles. The bonded GaN layer was thinned from the backside by a fast atom beam etching to remove the buffer layer and to generate the rib waveguides. The transmission characteristics of the GaN microring waveguide resonators were measured. The losses of the straight waveguides were measured to be 4.0±1.7  dB/mm around a wavelength of 1.55 μm. The microring radii ranged from 30 to 60 μm, where the measured free-spectral ranges varied from 2.58 to 5.30 nm. The quality factors of the microring waveguide resonators were from 1710 to 2820.

Room-temperature subnanosecond waveguide lasers in Nd:YVO4 Q-switched by phase-change VO2: A comparison with 2D materials

PubMed Central

Nie, Weijie; Li, Rang; Cheng, Chen; Chen, Yanxue; Lu, Qingming; Romero, Carolina; Vázquez de Aldana, Javier R.; Hao, Xiaotao; Chen, Feng

2017-01-01

We report on room-temperature subnanosecond waveguide laser operation at 1064 nm in a Nd:YVO4 crystal waveguide through Q-switching of phase-change nanomaterial vanadium dioxide (VO2). The unique feature of VO2 nanomaterial from the insulating to metallic phases offers low-saturation-intensity nonlinear absorptions of light for subnanosecond pulse generation. The low-loss waveguide is fabricated by using the femtosecond laser writing with depressed cladding geometry. Under optical pump at 808 nm, efficient pulsed laser has been achieved in the Nd:YVO4 waveguide, reaching minimum pulse duration of 690 ps and maximum output average power of 66.7 mW. To compare the Q-switched laser performances by VO2 saturable absorber with those based on two-dimensional materials, the 1064-nm laser pulses have been realized in the same waveguide platform with either graphene or transition metal dichalcogenide (in this work, WS2) coated mirror. The results on 2D material Q-switched waveguide lasers have shown that the shortest pulses are with 22-ns duration, whilst the maximum output average powers reach ~161.9 mW. This work shows the obvious difference on the lasing properties based on phase-change material and 2D materials, and suggests potential applications of VO2 as low-cost saturable absorber for subnanosecond laser generation. PMID:28383017

NREL Researchers Create New Materials With Unusual Properties | News | NREL

Science.gov Websites

show how such new low-density materials can be made - with unique properties remarkably different from compounds with atomic structures that didn't match, the researchers theorized that mixing two different high manganese telluride (MnTe) that have different crystal structures - the approach known as heterostructural

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

DTIC Science & Technology

2013-04-29

of the structures were intentionally doped. The AlGaN composition was determined by triple -axis high-resolution X-ray diffraction measurements. Cross...threshold can be achieved on single crystal AlN substrates. This achievement serves as a starting point towards realizing electrically pumped sub-300 nm UV

Avalanche atomic switching in strain engineered Sb2Te3-GeTe interfacial phase-change memory cells

NASA Astrophysics Data System (ADS)

Zhou, Xilin; Behera, Jitendra K.; Lv, Shilong; Wu, Liangcai; Song, Zhitang; Simpson, Robert E.

2017-09-01

By confining phase transitions to the nanoscale interface between two different crystals, interfacial phase change memory heterostructures represent the state of the art for energy efficient data storage. We present the effect of strain engineering on the electrical switching performance of the {{Sb}}2{{Te}}3-GeTe superlattice van der Waals devices. Multiple Ge atoms switching through a two-dimensional Te layer reduces the activation barrier for further atoms to switch; an effect that can be enhanced by biaxial strain. The out-of-plane phonon mode of the GeTe crystal remains active in the superlattice heterostructures. The large in-plane biaxial strain imposed by the {{Sb}}2{{Te}}3 layers on the GeTe layers substantially improves the switching speed, reset energy, and cyclability of the superlattice memory devices. Moreover, carefully controlling residual stress in the layers of {{Sb}}2{{Te}}3-GeTe interfacial phase change memories provides a new degree of freedom to design the properties of functional superlattice structures for memory and photonics applications.

Narrow Band Filter at 1550 nm Based on Quasi-One-Dimensional Photonic Crystal with a Mirror-Symmetric Heterostructure.

PubMed

Wang, Fang; Cheng, Yong Zhi; Wang, Xian; Zhang, Yi Nan; Nie, Yan; Gong, Rong Zhou

2018-06-27

In this paper, we present a high-efficiency narrow band filter (NBF) based on quasi-one-dimensional photonic crystal (PC) with a mirror symmetric heterostructure. Similarly to the Fabry-Perot-like resonance cavity, the alternately-arranged dielectric layers on both sides act as the high reflectance and the junction layers used as the defect mode of the quasi-one-dimensional PC, which can be designed as a NBF. The critical conditions for the narrow pass band with high transmittance are demonstrated and analyzed by simulation and experiment. The simulation results indicate that the transmission peak of the quasi-one-dimensional PC-based NBF is up to 95.99% at the telecommunication wavelength of 1550 nm, which agrees well with the experiment. Furthermore, the influences of the periodicity and thickness of dielectric layers on the transmission properties of the PC-based NBF also have been studied numerically. Due to its favorable properties of PC-based NBF, it is can be found to have many potential applications, such as detection, sensing, and communication.

Strained-layer indium gallium arsenide-gallium arsenide- aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Osowski, Mark Louis

With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.

Binary photonic crystal for refractometric applications (TE case)

NASA Astrophysics Data System (ADS)

Taya, Sofyan A.; Shaheen, Somaia A.

2018-04-01

In this work, a binary photonic crystal is proposed as a refractometric sensor. The dispersion relation and the sensitivity are derived for transverse electric (TE) mode. In our analysis, the first layer is considered to be the analyte layer and the second layer is assumed to be left-handed material (LHM), dielectric or metal. It is found that the sensitivity of the LHM structure is the highest among other structures. It is possible for LHM photonic crystal to achieve a sensitivity improvement of 412% compared to conventional slab waveguide sensor.

Probing the liquid crystal alignment interface and switching dynamics in a slab waveguide architecture

NASA Astrophysics Data System (ADS)

Gotjen, Henry G.; Kolacz, Jakub; Myers, Jason D.; Frantz, Jesse A.; Bekele, Robel Y.; Naciri, Jawad; Spillmann, Christopher M.

2018-02-01

A non-mechanical refractive laser beam steering device has been developed to provide continuous, two-dimensional steering of infrared beams. The technology implements a dielectric slab waveguide architecture with a liquid crystal (LC) cladding. With voltage control, the birefringence of the LC can be leveraged to tune the effective index of the waveguide under an electrode. With a clever prism electrode design a beam coupled into the waveguide can be deflected continuously in two dimensions as it is coupled out into free space. The optical interaction with LC in this beamsteerer is unique from typical LC applications: only the thin layer of LC (100s of nm) near the alignment interface interacts with the beam's evanescent field. Whereas most LC interactions take place over short path lengths (microns) in the bulk of the material, here we can interrogate the behavior of LC near the alignment interface over long path lengths (centimeters). In this work the beamsteerer is leveraged as a tool to study the behavior of LC near the alignment layer in contrast to the bulk material. We find that scattering is substantially decreased near the alignment interface due to the influence of the surface anchoring energy to suppress thermal fluctuations. By tracking the position of the deflected beam with a high speed camera, we measure response times of the LC near the interface in off-to-on switching ( ms) and on-to-off switching ( 100ms). Combined, this work will provide a path for improved alignment techniques, greater optical throughput, and faster response times in this unique approach to non-mechanical beamsteering.

Monolithic liquid crystal waveguide Fourier transform spectrometer for gas species sensing

NASA Astrophysics Data System (ADS)

Chao, Tien-Hsin; Lu, Thomas T.; Davis, Scott R.; Rommel, Scott D.; Farca, George; Luey, Ben; Martin, Alan; Anderson, Michael H.

2011-04-01

Jet Propulsion Lab and Vescent Photonics Inc. and are jointly developing an innovative ultracompact (volume < 10 cm3), ultra-low power (<10-3 Watt-hours per measurement and zero power consumption when not measuring), completely non-mechanical Liquid Crystal Waveguide Fourier Transform Spectrometer (LCWFTS) that will be suitable for a variety of remote-platform, in-situ measurements. These devices are made possible by novel electro-evanescent waveguide architecture, enabling "monolithic chip-scale" Electro Optic-FTS (EO-FTS) sensors. The potential performance of these EO-FTS sensors include: i) a spectral range throughout 0.4-5 μm (25000 - 2000 cm-1), ii) high-resolution (Δλ <= 0.1 nm), iii) high-speed (< 1 ms) measurements, and iv) rugged integrated optical construction. This performance potential enables the detection and quantification of a large number of different atmospheric gases simultaneously in the same air mass and the rugged construction will enable deployment on previously inaccessible platforms. The sensor construction is also amenable for analyzing aqueous samples on remote floating or submerged platforms. We will report a proof-of-principle prototype LCWFTS sensor that has been demonstrated in the near-IR (range of 1450-1700 nm) with a 5 nm resolution. This performance is in good agreement with theoretical models, which are being used to design and build the next generation LCWFTS devices.

In-line polarization rotator based on the quantum-optical analogy.

PubMed

Chen, Lei; Qu, Ke-Nan; Shen, Heng; Zhang, Wei-Gang; Chou, Keng C; Liu, Qian; Yan, Tie-Yi; Wang, Biao; Wang, Song

2016-05-01

An in-line polarization rotator (PR) is proposed based on the quantum-optical analogy (QOA). The proposed PR possesses an auxiliary E7 liquid crystal (LC) waveguide in the vicinity of the single-mode fiber (SMF) core. Because of the matched core size, the PR demonstrates good compatibility with the established backbone networks which are composed of conventional SMFs. With optimized parameters for the auxiliary waveguide, the PR offers a near 100% polarization conversion efficiency at the 1550 nm band with a bandwidth of ∼30  nm, a length of ∼4625.9  μm with a large tolerance of ∼550  μm, and a tolerance of the input light polarization angle and rotation angle of the E7 LC of ∼π/30 and ∼π/36  rad, respectively. The performance was verified by the full-vector finite-element method. The proposed PR can be easily fabricated based on the existing photonics crystal fiber manufacturing process, making it a potentially inexpensive device for applications in modern communication systems. Moreover, the QOA, compared with the previous supermode-theory design method, allows a designer to consider several waveguides separately. Therefore, various unique characteristics can be met simultaneously which is consistent with the trend of modern fiber design.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, Piyush, E-mail: piyush-patel130@yahoo.com; Vyas, S. M., E-mail: s-m-vyas-gu@hotmail.com; Patel, Vimal

The III-VI compound semiconductors is important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell and ionic batteries. In this paper, In{sub 2}Se{sub 2.7} Sb{sub 0.3} single crystals were grown by the Bridgman method with temperature gradient of 60 °C/cm and the growth velocity 0.5cm/hr. The as-grown crystals were examined under the optical microscope for surface study, a various growth features observed on top free surface of the single crystal which is predominant of layers growth mechanism. The lattice parameters of as-grown crystal was determined by the XRD analysis. A Vickers’ projection microscope were usedmore » for the study of microhardness on the as-cleaved, cold-worked and annealed samples of the crystals, the results were discussed, and reported in detail.« less

Strain-relief by single dislocation loops in calcite crystals grown on self-assembled monolayers

DOE PAGES

Ihli, Johannes; Clark, Jesse N.; Côté, Alexander S.; ...

2016-06-15

Most of our knowledge of dislocation-mediated stress relaxation during epitaxial crystal growth comes from the study of inorganic heterostructures. In this study, we use Bragg coherent diffraction imaging to investigate a contrasting system, the epitaxial growth of calcite (CaCO 3) crystals on organic self-assembled monolayers, where these are widely used as a model for biomineralization processes. The calcite crystals are imaged to simultaneously visualize the crystal morphology and internal strain fields. Our data reveal that each crystal possesses a single dislocation loop that occupies a common position in every crystal. The loops exhibit entirely different geometries to misfit dislocations generatedmore » in conventional epitaxial thin films and are suggested to form in response to the stress field, arising from interfacial defects and the nanoscale roughness of the substrate. In conclusion, this work provides unique insight into how self-assembled monolayers control the growth of inorganic crystals and demonstrates important differences as compared with inorganic substrates.« less

Strain-relief by single dislocation loops in calcite crystals grown on self-assembled monolayers

PubMed Central

Ihli, Johannes; Clark, Jesse N.; Côté, Alexander S.; Kim, Yi-Yeoun; Schenk, Anna S.; Kulak, Alexander N.; Comyn, Timothy P.; Chammas, Oliver; Harder, Ross J.; Duffy, Dorothy M.; Robinson, Ian K.; Meldrum, Fiona C.

2016-01-01

Most of our knowledge of dislocation-mediated stress relaxation during epitaxial crystal growth comes from the study of inorganic heterostructures. Here we use Bragg coherent diffraction imaging to investigate a contrasting system, the epitaxial growth of calcite (CaCO3) crystals on organic self-assembled monolayers, where these are widely used as a model for biomineralization processes. The calcite crystals are imaged to simultaneously visualize the crystal morphology and internal strain fields. Our data reveal that each crystal possesses a single dislocation loop that occupies a common position in every crystal. The loops exhibit entirely different geometries to misfit dislocations generated in conventional epitaxial thin films and are suggested to form in response to the stress field, arising from interfacial defects and the nanoscale roughness of the substrate. This work provides unique insight into how self-assembled monolayers control the growth of inorganic crystals and demonstrates important differences as compared with inorganic substrates. PMID:27302863

High-Q silicon-on-insulator slot photonic crystal cavity infiltrated by a liquid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caër, Charles; Le Roux, Xavier; Cassan, Eric, E-mail: eric.cassan@u-psud.fr

We report the experimental realization of a high-Q slot photonic crystal cavity in Silicon-On-Insulator (SOI) configuration infiltrated by a liquid. Loaded Q-factor of 23 000 is measured at telecom wavelength. The intrinsic quality factor inferred from the transmission spectrum is higher than 200 000, which represents a record value for slot photonic crystal cavities on SOI, whereas the maximum of intensity of the cavity is roughly equal to 20% of the light transmitted in the waveguide. This result makes filled slot photonic crystal cavities very promising for silicon-based light emission and ultrafast nonlinear optics.

New type of in-gap states at a spinel/perovskite interface: combined resonant soft x-ray photoemission spectroscopy and first-principles study.

NASA Astrophysics Data System (ADS)

Borisov, Vladislav; Schuetz, Philipp; Pfaff, Florian; Scheiderer, Philipp; Dudy, Lenart; Zapf, Michael; Gabel, Judith; Christensen, Dennis Valbjorn; Chen, Yunzhong; Pryds, Nini; Strocov, Vladimir; Rogalev, Victor; Schlueter, Christoph; Lee, Tien-Lin; Jeschke, Harald O.; Valenti, Roser; Sing, Michael; Claessen, Ralph

Oxygen vacancies in oxide heterostructures create a plethora of electronic phenomena not observed in the stoichiometric systems. In this talk we will discuss the presence of a new type of in-gap states at the spinel/perovskite γ-Al2O3/SrTiO3 interface, as observed in soft x-ray resonant photoemission spectroscopy. Based on ab initio calculations and crystal-field analysis of different atomic environments, we identify the origin of this behavior and we argue on the possible origin of the extraordinarily high electron mobility measured in this heterostructure. This work was financially supported by the Deutsche Forschungsgemeinschaft SFB/TR 49 and SFB 1170.

Comparison of finite element and transfer matrix methods for numerical investigation of surface plasmon waveguides

NASA Astrophysics Data System (ADS)

Haddouche, Issam; Cherbi, Lynda

2017-01-01

In this paper, we investigate Surface Plasmon Polaritons (SPPs) in the visible regime at a metal/dielectric interface within two different waveguide structures, the first is a Photonic Crystal Fiber where the Full Vector Finite Element Method (FVFEM) is used and the second is a slab waveguide where the transfer matrix method (TMM) is used. Knowing the diversities between the two methods in terms of speed, simplicity, and scope of application, computation is implemented with respect to wavelength and metal layer thickness in order to analyze and compare the performances of the two methods. Simulation results show that the TMM can be a good approximation for the FVFEM and that SPPs behave more like modes propagating in a semi infinite metal/dielectric structure as metal thickness increases from about 150 nm.

Near-zero dispersion flattened, low-loss porous-core waveguide design for terahertz signal transmission

NASA Astrophysics Data System (ADS)

Sultana, Jakeya; Islam, Md. Saiful; Atai, Javid; Islam, Muhammad Rakibul; Abbott, Derek

2017-07-01

We demonstrate a photonic crystal fiber with near-zero flattened dispersion, ultralower effective material loss (EML), and negligible confinement loss for a broad spectrum range. The use of cyclic olefin copolymer Topas with improved core confinement significantly reduces the loss characteristics and the use of higher air filling fraction results in flat dispersion characteristics. The properties such as dispersion, EML, confinement loss, modal effective area, and single-mode operation of the fiber have been investigated using the full-vector finite element method with the perfectly matched layer absorbing boundary conditions. The practical implementation of the proposed fiber is achievable with existing fabrication techniques as only circular-shaped air holes have been used to design the waveguide. Thus, it is expected that the proposed terahertz waveguide can potentially be used for flexible and efficient transmission of terahertz waves.

Passive Q-switching of femtosecond-laser-written Tm:KLu(WO4)2 waveguide lasers by graphene and MoS2 saturable absorbers

NASA Astrophysics Data System (ADS)

Kifle, Esrom; Mateos, Xavier; Vázquez de Aldana, Javier Rodríguez; Ródenas, Airan; Loiko, Pavel; Zakharov, Viktor; Veniaminov, Andrey; Yu, Haohai; Zhang, Huaijin; Chen, Yanxue; Aguiló, Magdalena; Díaz, Francesc; Griebner, Uwe; Petrov, Valentin

2018-02-01

A buried depressed-index channel waveguide with a circular cladding and a core diameter of 40 μm is fabricated in a bulk monoclinic 3 at.% Tm:KLu(WO4)2 crystal by femtosecond direct laser writing. In the continuous-wave regime, the Tm waveguide laser generates 210 mW at 1849.6 nm with a slope efficiency η of 40.8%. Passively Q-switched operation is achieved by inserting transmission-type 2D saturable absorbers (SAs) based on few-layer graphene and MoS2. Using the graphene-SA, a maximum average output power of 25 mW is generated at 1844.8 nm. The pulse characteristics (duration/energy) are 88 ns/18 nJ at a repetition rate of 1.39 MHz.

Low loss poly-silicon for high performance capacitive silicon modulators.

PubMed

Douix, Maurin; Baudot, Charles; Marris-Morini, Delphine; Valéry, Alexia; Fowler, Daivid; Acosta-Alba, Pablo; Kerdilès, Sébastien; Euvrard, Catherine; Blanc, Romuald; Beneyton, Rémi; Souhaité, Aurélie; Crémer, Sébastien; Vulliet, Nathalie; Vivien, Laurent; Boeuf, Frédéric

2018-03-05

Optical properties of poly-silicon material are investigated to be integrated in new silicon photonics devices, such as capacitive modulators. Test structure fabrication is done on 300 mm wafer using LPCVD deposition: 300 nm thick amorphous silicon layers are deposited on thermal oxide, followed by solid phase crystallization anneal. Rib waveguides are fabricated and optical propagation losses measured at 1.31 µm. Physical analysis (TEM ASTAR, AFM and SIMS) are used to assess the origin of losses. Optimal deposition and annealing conditions have been defined, resulting in 400 nm-wide rib waveguides with only 9.2-10 dB/cm losses.

Data Mining for New Two- and One-Dimensional Weakly Bonded Solids and Lattice-Commensurate Heterostructures.

PubMed

Cheon, Gowoon; Duerloo, Karel-Alexander N; Sendek, Austin D; Porter, Chase; Chen, Yuan; Reed, Evan J

2017-03-08

Layered materials held together by weak interactions including van der Waals forces, such as graphite, have attracted interest for both technological applications and fundamental physics in their layered form and as an isolated single-layer. Only a few dozen single-layer van der Waals solids have been subject to considerable research focus, although there are likely to be many more that could have superior properties. To identify a broad spectrum of layered materials, we present a novel data mining algorithm that determines the dimensionality of weakly bonded subcomponents based on the atomic positions of bulk, three-dimensional crystal structures. By applying this algorithm to the Materials Project database of over 50,000 inorganic crystals, we identify 1173 two-dimensional layered materials and 487 materials that consist of weakly bonded one-dimensional molecular chains. This is an order of magnitude increase in the number of identified materials with most materials not known as two- or one-dimensional materials. Moreover, we discover 98 weakly bonded heterostructures of two-dimensional and one-dimensional subcomponents that are found within bulk materials, opening new possibilities for much-studied assembly of van der Waals heterostructures. Chemical families of materials, band gaps, and point groups for the materials identified in this work are presented. Point group and piezoelectricity in layered materials are also evaluated in single-layer forms. Three hundred and twenty-five of these materials are expected to have piezoelectric monolayers with a variety of forms of the piezoelectric tensor. This work significantly extends the scope of potential low-dimensional weakly bonded solids to be investigated.

Cadmium telluride solar cells: Record-breaking voltages

DOE PAGES

Poplawsky, Jonathan D.

2016-01-01

Here, the performance of CdTe solar cells — cheaper alternatives to silicon photovoltaics — is hampered by their low output voltages, which are normally well below the theoretical limit. Now, record voltages of over 1 V have been reported in single-crystal CdTe heterostructure solar cells, which are close to those of benchmark GaAs cells.

Ultrafast Photoinduced Multimode Antiferromagnetic Spin Dynamics in Exchange-Coupled Fe/RFeO3 (R = Er or Dy) Heterostructures.

PubMed

Tang, Jin; Ke, Yajiao; He, Wei; Zhang, Xiangqun; Zhang, Wei; Li, Na; Zhang, Yongsheng; Li, Yan; Cheng, Zhaohua

2018-05-25

Antiferromagnetic spin dynamics is important for both fundamental and applied antiferromagnetic spintronic devices; however, it is rarely explored by external fields because of the strong exchange interaction in antiferromagnetic materials. Here, the photoinduced excitation of ultrafast antiferromagnetic spin dynamics is achieved by capping antiferromagnetic RFeO 3 (R = Er or Dy) with an exchange-coupled ferromagnetic Fe film. Compared with antiferromagnetic spin dynamics of bare RFeO 3 orthoferrite single crystals, which can be triggered effectively by ultrafast laser heating just below the phase transition temperature, the ultrafast photoinduced multimode antiferromagnetic spin dynamic modes, for exchange-coupled Fe/RFeO 3 heterostructures, including quasiferromagnetic resonance, impurity, coherent phonon, and quasiantiferromagnetic modes, are observed in a temperature range of 10-300 K. These experimental results not only offer an effective means to trigger ultrafast antiferromagnetic spin dynamics of rare-earth orthoferrites, but also shed light on the ultrafast manipulation of antiferromagnetic magnetization in Fe/RFeO 3 heterostructures. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes.

PubMed

Qian, Fang; Gradecak, Silvija; Li, Yat; Wen, Cheng-Yen; Lieber, Charles M

2005-11-01

We report the growth and characterization of core/multishell nanowire radial heterostructures, and their implementation as efficient and synthetically tunable multicolor nanophotonic sources. Core/multishell nanowires were prepared by metal-organic chemical vapor deposition with an n-GaN core and InxGa1-xN/GaN/p-AlGaN/p-GaN shells, where variation of indium mole fraction is used to tune emission wavelength. Cross-sectional transmission electron microscopy studies reveal that the core/multishell nanowires are dislocation-free single crystals with a triangular morphology. Energy-dispersive X-ray spectroscopy clearly shows shells with distinct chemical compositions, and quantitatively confirms that the thickness and composition of individual shells can be well controlled during synthesis. Electrical measurements show that the p-AlGaN/p-GaN shell structure yields reproducible hole conduction, and electroluminescence measurements demonstrate that in forward bias the core/multishell nanowires function as light-emitting diodes, with tunable emission from 365 to 600 nm and high quantum efficiencies. The ability to synthesize rationally III-nitride core/multishell nanowire heterostructures opens up significant potential for integrated nanoscale photonic systems, including multicolor lasers.

Vector magnetometer based on synchronous manipulation of nitrogen-vacancy centers in all crystal directions

NASA Astrophysics Data System (ADS)

Zhang, Chen; Yuan, Heng; Zhang, Ning; Xu, Lixia; Zhang, Jixing; Li, Bo; Fang, Jiancheng

2018-04-01

Negatively charged nitrogen vacancy (NV‑) centers in diamond have been extensively studied as high-sensitivity magnetometers, showcasing a wide range of applications. This study experimentally demonstrates a vector magnetometry scheme based on synchronous manipulation of NV‑ center ensembles in all crystal directions using double frequency microwaves (MWs) and multi-coupled-strip-lines (mCSL) waveguide. The application of the mCSL waveguide ensures a high degree of synchrony (99%) for manipulating NV‑ centers in multiple orientations in a large volume. Manipulation with double frequency MWs makes NV‑ centers of all four crystal directions involved, and additionally leads to an enhancement of the manipulation field. In this work, by monitoring the changes in the slope of the resonance line consisting of multi-axes NV‑ centers, measurement of the direction of the external field vector was demonstrated with a sensitivity of {{10}\\prime}/\\sqrt{Hz} . Based on the scheme, the fluorescence signal contrast was improved by four times higher and the sensitivity to the magnetic field strength was improved by two times. The method provides a more practical way of achieving vector sensors based on NV‑ center ensembles in diamond.

Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals.

PubMed

Li, Xufan; Basile, Leonardo; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A; Lee, Jaekwang; Idrobo, Juan C; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

2015-02-23

Characterizing and controlling the interlayer orientations and stacking orders of two-dimensional (2D) bilayer crystals and van der Waals (vdW) heterostructures is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) crystals that result from different layer stackings provide an ideal platform to study the stacking configurations in 2D bilayer crystals. Through a controllable vapor-phase deposition method, bilayer GaSe crystals were selectively grown and their two preferred 0° or 60° interlayer rotations were investigated. The commensurate stacking configurations (AA' and AB stacking) in as-grown bilayer GaSe crystals are clearly observed at the atomic scale, and the Ga-terminated edge structure was identified using scanning transmission electron microscopy. Theoretical analysis reveals that the energies of the interlayer coupling are responsible for the preferred orientations among the bilayer GaSe crystals. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Test facility for the evaluation of microwave transmission components

NASA Astrophysics Data System (ADS)

Fong, C. G.; Poole, B. R.

1985-10-01

A Low Power Test Facility (LPTF) was developed to evaluate the performance of Electron Cyclotron Resonance Heating (ECRH) microwave transmission components for the Mirror Fusion Test Facility (MFTF-B). The facility generates 26 to 60 GHz in modes of TE01, TE02, or TE03 launched at power levels of 1/2 milliwatt. The propagation of the RF as it radiates from either transmitting or secondary reflecting microwave transmission components is recorded by a discriminating crystal detector mechanically manipulated at constant radius in spherical coordinates. The facility is used to test, calibrate, and verify the design of overmoded, circular waveguide components, quasi-optical reflecting elements before high power use. The test facility consists of microwave sources and metering components, such as VSWR, power and frequency meters, a rectangular TE10 to circular TE01 mode transducer, mode filter, circular TE01 to 2.5 in. diameter overmoded waveguide with mode converters for combination of TE01 to TE03 modes. This assembly then connects to a circular waveguide launcher or the waveguide component under test.

An in-plane nano-mechanics approach to achieve reversible resonance control of photonic crystal nanocavities.

PubMed

Chew, Xiongyeu; Zhou, Guangya; Yu, Hongbin; Chau, Fook Siong; Deng, Jie; Loke, Yee Chong; Tang, Xiaosong

2010-10-11

Control of photonic crystal resonances in conjunction with large spectral shifting is critical in achieving reconfigurable photonic crystal devices. We propose a simple approach to achieve nano-mechanical control of photonic crystal resonances within a compact integrated on-chip approach. Three different tip designs utilizing an in-plane nano-mechanical tuning approach are shown to achieve reversible and low-loss resonance control on a one-dimensional photonic crystal nanocavity. The proposed nano-mechanical approach driven by a sub-micron micro-electromechanical system integrated on low loss suspended feeding nanowire waveguide, achieved relatively large resonance spectral shifts of up to 18 nm at a driving voltage of 25 V. Such designs may potentially be used as tunable optical filters or switches.

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

NASA Technical Reports Server (NTRS)

Palfrey, S. L.; Enstrom, R. E.; Longeway, P. A.

1989-01-01

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

High-power operation of highly reliable narrow stripe pseudomorphic single quantum well lasers emitting at 980 nm

NASA Technical Reports Server (NTRS)

Larsson, A.; Forouhar, S.; Cody, J.; Lang, R. J.

1990-01-01

Ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well lasers exhibiting record high quantum efficiencies and high output power densities (105 mW per facet from a 6 micron wide stripe) at a lasing wavelength of 980 nm are discussed that were fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. Life testing at an output power of 30 mW per uncoated facet reveals a slow gradual degradation during the initial 500 h of operation after which the operating characteristics of the lasers become stable. The emission wavelength, the high output power, and the fundamental lateral mode operation render these lasers suitable for pumping Er3+-doped fiber amplifiers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Veselov, D. A., E-mail: dmitriy90@list.ru; Shashkin, I. S.; Bakhvalov, K. V.

Semiconductor lasers based on MOCVD-grown AlGaInAs/InP separate-confinement heterostructures are studied. It is shown that raising only the energy-gap width of AlGaInAs-waveguides without the introduction of additional barriers results in more pronounced current leakage into the cladding layers. It is found that the introduction of additional barrier layers at the waveguide–cladding-layer interface blocks current leakage into the cladding layers, but results in an increase in the internal optical loss with increasing pump current. It is experimentally demonstrated that the introduction of blocking layers makes it possible to obtain maximum values of the internal quantum efficiency of stimulated emission (92%) and continuouswavemore » output optical power (3.2 W) in semiconductor lasers in the eye-safe wavelength range (1400–1600 nm).« less

Deterministic photon-emitter coupling in chiral photonic circuits.

PubMed

Söllner, Immo; Mahmoodian, Sahand; Hansen, Sofie Lindskov; Midolo, Leonardo; Javadi, Alisa; Kiršanskė, Gabija; Pregnolato, Tommaso; El-Ella, Haitham; Lee, Eun Hye; Song, Jin Dong; Stobbe, Søren; Lodahl, Peter

2015-09-01

Engineering photon emission and scattering is central to modern photonics applications ranging from light harvesting to quantum-information processing. To this end, nanophotonic waveguides are well suited as they confine photons to a one-dimensional geometry and thereby increase the light-matter interaction. In a regular waveguide, a quantum emitter interacts equally with photons in either of the two propagation directions. This symmetry is violated in nanophotonic structures in which non-transversal local electric-field components imply that photon emission and scattering may become directional. Here we show that the helicity of the optical transition of a quantum emitter determines the direction of single-photon emission in a specially engineered photonic-crystal waveguide. We observe single-photon emission into the waveguide with a directionality that exceeds 90% under conditions in which practically all the emitted photons are coupled to the waveguide. The chiral light-matter interaction enables deterministic and highly directional photon emission for experimentally achievable on-chip non-reciprocal photonic elements. These may serve as key building blocks for single-photon optical diodes, transistors and deterministic quantum gates. Furthermore, chiral photonic circuits allow the dissipative preparation of entangled states of multiple emitters for experimentally achievable parameters, may lead to novel topological photon states and could be applied for directional steering of light.

Deterministic photon-emitter coupling in chiral photonic circuits

NASA Astrophysics Data System (ADS)

Söllner, Immo; Mahmoodian, Sahand; Hansen, Sofie Lindskov; Midolo, Leonardo; Javadi, Alisa; Kiršanskė, Gabija; Pregnolato, Tommaso; El-Ella, Haitham; Lee, Eun Hye; Song, Jin Dong; Stobbe, Søren; Lodahl, Peter

2015-09-01

Engineering photon emission and scattering is central to modern photonics applications ranging from light harvesting to quantum-information processing. To this end, nanophotonic waveguides are well suited as they confine photons to a one-dimensional geometry and thereby increase the light-matter interaction. In a regular waveguide, a quantum emitter interacts equally with photons in either of the two propagation directions. This symmetry is violated in nanophotonic structures in which non-transversal local electric-field components imply that photon emission and scattering may become directional. Here we show that the helicity of the optical transition of a quantum emitter determines the direction of single-photon emission in a specially engineered photonic-crystal waveguide. We observe single-photon emission into the waveguide with a directionality that exceeds 90% under conditions in which practically all the emitted photons are coupled to the waveguide. The chiral light-matter interaction enables deterministic and highly directional photon emission for experimentally achievable on-chip non-reciprocal photonic elements. These may serve as key building blocks for single-photon optical diodes, transistors and deterministic quantum gates. Furthermore, chiral photonic circuits allow the dissipative preparation of entangled states of multiple emitters for experimentally achievable parameters, may lead to novel topological photon states and could be applied for directional steering of light.

Single Nanowire Probe for Single Cell Endoscopy and Sensing

NASA Astrophysics Data System (ADS)

Yan, Ruoxue

The ability to manipulate light in subwavelength photonic and plasmonic structures has shown great potentials in revolutionizing how information is generated, transformed and processed. Chemically synthesized nanowires, in particular, offers a unique toolbox not only for highly compact and integrated photonic modules and devices, including coherent and incoherent light sources, waveguides, photodetectors and photovoltaics, but also for new types of nanoscopic bio-probes for spot cargo delivery and in-situ single cell endoscopy and sensing. Such nanowire probes would enable us to carry out intracellular imaging and probing with high spatial resolution, monitor in-vivo biological processes within single living cells and greatly improve our fundamental understanding of cell functions, intracellular physiological processes, and cellular signal pathways. My work is aimed at developing a material and instrumental platform for such single nanowire probe. Successful optical integration of Ag nanowire plasmonic waveguides, which offers deep subwavelength mode confinement, and conventional photonic waveguides was demonstrated on a single nanowire level. The highest plasmonic-photonic coupling efficiency coupling was found at small coupling angles and low input frequencies. The frequency dependent propagation loss was observed in Ag nanowire and was confirmed by quantitative measurement and in agreement with theoretical expectations. Rational integration of dielectric and Ag nanowire waveguide components into hybrid optical-plasmonic routing devices has been demonstrated. This capability is essential for incorporating sub-100nm Ag nanowire waveguides into optical fiber based nanoprobes for single cell endoscopy. The nanoprobe system based on single nanowire waveguides was demonstrated by optically coupling semiconductor or metal nanowire with an optical fiber with tapered tip. This nanoprobe design requires minimal instrumentation which makes it cost efficient and readily adaptable to average bio-lab environment. These probes are mechanically robust and flexible and can withstand repeated bending and deformation without significant deterioration in optical performance, which offers an ideal instrumental platform for out subsequent effort of using these nanoprobes in chemical sensing as well as single cell endoscopy and spot delivery. Parameters affecting the coupling efficiency and output power of the nanoprobe were studied and chemical etched of single mode fiber with small cone angle was established to be optimized for highly effective optical nanoprobes. The versatility of the nanoprobe design was first tested by transforming the nanowire probe into a pH sensor with near-field photopolymerization of a copolymer containing pH sensitive dye on the tip of the nanowire. The pH-sensitive nanoprobe was able to report the pH difference in micro-droplets containing buffer solution with the excitation of light waveguided on the nanoprobe with internal calibration, fast response time and good photostability and reversibility. Such nanoprobe sensors are ideal for high definition spatial and temporal sensing of concentration profile, especially for the kinetic processes in single cell studies for which chemical probes of minute sizes and fast response are desired. The nanoprobe was then applied into spot cargo delivery and in-situ single cell endoscopy. It was demonstrated that nanowire-based optical probe can deliver payloads into the cell with a high spatiotemporal precision, guide and confine visible light into intracellular compartments selectively and detect optical signals from the subcellular regions with high spatial resolution. The nanoprobe was proven to be biocompatible and non-invasive. The effective optical coupling between the fiber optics and the nanowire enables highly localized excitation and detection, limiting the probe volume to the close proximity of the nanowire. None the less, this versatile technique does not rely on any expensive or bulky instrumentation, and relies only on micromanipulator and optical microscope that are readily available in most biological labs. The different functions can be further integrated to make the whole nanoprobe system more compact and even portable. In addition, my research also includes the first demonstration of the synthesis of the longitudinal heterostructured SiO2/Al2O 3 nanotubes and the nanofluidic diode device based on the discontinuity of their internal surface charge. Comprehensive characterization shows that the nanotubes has heterostructured inner tube walls, as well as a discontinuity of surface charge. The ionic transport through these nanotube heterojunctions exhibits clear current rectification, a signature of ionic diode behavior. The development of such nanofluidic devices would enable the modulation of ionic and molecular transport at a more sophisticated level, and lead to large-scale integrated nanofluidic networks and logic circuits.

Plateau-Rayleigh Crystal Growth of Nanowire Heterostructures: Strain-Modified Surface Chemistry and Morphological Control in One, Two, and Three Dimensions.

PubMed

Day, Robert W; Mankin, Max N; Lieber, Charles M

2016-04-13

One-dimensional (1D) structures offer unique opportunities for materials synthesis since crystal phases and morphologies that are difficult or impossible to achieve in macroscopic crystals can be synthesized as 1D nanowires (NWs). Recently, we demonstrated one such phenomenon unique to growth on a 1D substrate, termed Plateau-Rayleigh (P-R) crystal growth, where periodic shells develop along a NW core to form diameter-modulated NW homostructures with tunable morphologies. Here we report a novel extension of the P-R crystal growth concept with the synthesis of heterostructures in which Ge (Si) is deposited on Si (Ge) 1D cores to generate complex NW morphologies in 1, 2, or 3D. Depositing Ge on 50 nm Si cores with a constant GeH4 pressure yields a single set of periodic shells, while sequential variation of GeH4 pressure can yield multimodulated 1D NWs with two distinct sets of shell periodicities. P-R crystal growth on 30 nm cores also produces 2D loop structures, where Ge (Si) shells lie primarily on the outside (inside) of a highly curved Si (Ge) core. Systematic investigation of shell morphology as a function of growth time indicates that Ge shells grow in length along positive curvature Si cores faster than along straight Si cores by an order of magnitude. Short Ge deposition times reveal that shells develop on opposite sides of 50 and 100 nm Si cores to form straight 1D morphologies but that shells develop on the same side of 20 nm cores to produce 2D loop and 3D spring structures. These results suggest that strain mediates the formation of 2 and 3D morphologies by altering the NW's surface chemistry and that surface diffusion of heteroatoms on flexible freestanding 1D substrates can facilitate this strain-mediated mechanism.

Photonic crystal based 1-bit full-adder optical circuit by using ring resonators in a nonlinear structure

NASA Astrophysics Data System (ADS)

Alipour-Banaei, Hamed; Seif-Dargahi, Hamed

2017-05-01

In this paper we proposed a novel design for realizing all optical 1*bit full-adder based on photonic crystals. The proposed structure was realized by cascading two optical 1-bit half-adders. The final structure is consisted of eight optical waveguides and two nonlinear resonant rings, created inside rod type two dimensional photonic crystal with square lattice. The structure has ;X;, ;Y; and ;Z; as input and ;SUM; and ;CARRY; as output ports. The performance and functionality of the proposed structure was validated by means of finite difference time domain method.

Semi-analytical model for a slab one-dimensional photonic crystal

NASA Astrophysics Data System (ADS)

Libman, M.; Kondratyev, N. M.; Gorodetsky, M. L.

2018-02-01

In our work we justify the applicability of a dielectric mirror model to the description of a real photonic crystal. We demonstrate that a simple one-dimensional model of a multilayer mirror can be employed for modeling of a slab waveguide with periodically changing width. It is shown that this width change can be recalculated to the effective refraction index modulation. The applicability of transfer matrix method of reflection properties calculation was demonstrated. Finally, our 1-D model was employed to analyze reflection properties of a 2-D structure - a slab photonic crystal with a number of elliptic holes.

An experimental study of noise in mid-infrared quantum cascade lasers of different designs

NASA Astrophysics Data System (ADS)

Schilt, Stéphane; Tombez, Lionel; Tardy, Camille; Bismuto, Alfredo; Blaser, Stéphane; Maulini, Richard; Terazzi, Romain; Rochat, Michel; Südmeyer, Thomas

2015-04-01

We present an experimental study of noise in mid-infrared quantum cascade lasers (QCLs) of different designs. By quantifying the high degree of correlation occurring between fluctuations of the optical frequency and voltage between the QCL terminals, we show that electrical noise is a powerful and simple mean to study noise in QCLs. Based on this outcome, we investigated the electrical noise in a large set of 22 QCLs emitting in the range of 7.6-8 μm and consisting of both ridge-waveguide and buried-heterostructure (BH) lasers with different geometrical designs and operation parameters. From a statistical data processing based on an analysis of variance, we assessed that ridge-waveguide lasers have a lower noise than BH lasers. Our physical interpretation is that additional current leakages or spare injection channels occur at the interface between the active region and the lateral insulator in the BH geometry, which induces some extra noise. In addition, Schottky-type contacts occurring at the interface between the n-doped regions and the lateral insulator, i.e., iron-doped InP, are also believed to be a potential source of additional noise in some BH lasers, as observed from the slight reduction in the integrated voltage noise observed at the laser threshold in several BH-QCLs.

Observing Imperfection in Atomic Interfaces for van der Waals Heterostructures.

PubMed

Rooney, Aidan P; Kozikov, Aleksey; Rudenko, Alexander N; Prestat, Eric; Hamer, Matthew J; Withers, Freddie; Cao, Yang; Novoselov, Kostya S; Katsnelson, Mikhail I; Gorbachev, Roman; Haigh, Sarah J

2017-09-13

Vertically stacked van der Waals heterostructures are a lucrative platform for exploring the rich electronic and optoelectronic phenomena in two-dimensional materials. Their performance will be strongly affected by impurities and defects at the interfaces. Here we present the first systematic study of interfaces in van der Waals heterostructure using cross-sectional scanning transmission electron microscope (STEM) imaging. By measuring interlayer separations and comparing these to density functional theory (DFT) calculations we find that pristine interfaces exist between hBN and MoS 2 or WS 2 for stacks prepared by mechanical exfoliation in air. However, for two technologically important transition metal dichalcogenide (TMDC) systems, MoSe 2 and WSe 2 , our measurement of interlayer separations provide the first evidence for impurity species being trapped at buried interfaces with hBN interfaces that are flat at the nanometer length scale. While decreasing the thickness of encapsulated WSe 2 from bulk to monolayer we see a systematic increase in the interlayer separation. We attribute these differences to the thinnest TMDC flakes being flexible and hence able to deform mechanically around a sparse population of protruding interfacial impurities. We show that the air sensitive two-dimensional (2D) crystal NbSe 2 can be fabricated into heterostructures with pristine interfaces by processing in an inert-gas environment. Finally we find that adopting glovebox transfer significantly improves the quality of interfaces for WSe 2 compared to processing in air.

General method for eliminating wave reflection in 2D photonic crystal waveguides by introducing extra scatterers based on interference cancellation of waves

NASA Astrophysics Data System (ADS)

Huang, Hao; Ouyang, Zhengbiao

2018-01-01

We propose a general method for eliminating the reflection of waves in 2 dimensional photonic crystal waveguides (2D-PCWs), a kind of 2D material, by introducing extra scatterers inside the 2D-PCWs. The intrinsic reflection in 2D-PCWs is compensated by the backward-scattered waves from these scatterers, so that the overall reflection is greatly reduced and the insertion loss is improved accordingly. We first present the basic theory for the compensation method. Then, as a demonstration, we give four examples of extremely-low-reflection and high-transmission 90°bent 2D-PCWs created according to the method proposed. In the four examples, it is demonstrated by plane-wave expansion method and finite-difference time-domain method that the 90°bent 2D-PCWs can have high transmission ratio greater than 90% in a wide range of operating frequency, and the highest transmission ratio can be greater than 99.95% with a return loss higher than 43 dB, better than that in other typical 90°bent 2D-PCWs. With our method, the bent 2D-PCWs can be optimized to obtain high transmission ratio at different operating wavelengths. As a further application of this method, a waveguide-based optical bridge for light crossing is presented, showing an optimum return loss of 46.85 dB, transmission ratio of 99.95%, and isolation rates greater than 41.77 dB. The method proposed provides also a useful way for improving conventional waveguides made of cables, fibers, or metal walls in the optical, infrared, terahertz, and microwave bands.

Laser performance and modeling of RE3+:YAG double-clad crystalline fiber waveguides

NASA Astrophysics Data System (ADS)

Li, Da; Lee, Huai-Chuan; Meissner, Stephanie K.; Meissner, Helmuth E.

2018-02-01

We report on laser performance of ceramic Yb:YAG and single crystal Tm:YAG double-clad crystalline fiber waveguide (CFW) lasers towards the goal of demonstrating the design and manufacturing strategy of scaling to high output power. The laser component is a double-clad CFW, with RE3+:YAG (RE = Yb, Tm respectively) core, un-doped YAG inner cladding, and ceramic spinel or sapphire outer cladding. Laser performance of the CFW has been demonstrated with 53.6% slope efficiency and 27.5-W stable output power at 1030-nm for Yb:YAG CFW, and 31.6% slope efficiency and 46.7-W stable output power at 2019-nm for Tm:YAG CFW, respectively. Adhesive-Free Bond (AFB®) technology enables a designable refractive index difference between core and inner cladding, and designable core and inner cladding sizes, which are essential for single transverse mode CFW propagation. To guide further development of CFW designs, we present thermal modeling, power scaling and design of single transverse mode operation of double-clad CFWs and redefine the single-mode operation criterion for the double-clad structure design. The power scaling modeling of double-clad CFW shows that in order to achieve the maximum possible output power limited by the physical properties, including diode brightness, thermal lens effect, and simulated Brillion scattering, the length of waveguide is in the range of 0.5 2 meters. The length of an individual CFW is limited by single crystal growth and doping uniformity to about 100 to 200 mm lengths, and also by availability of starting crystals and manufacturing complexity. To overcome the limitation of CFW lengths, end-to-end proximity-coupling of CFWs is introduced.

Single-photon non-linear optics with a quantum dot in a waveguide

NASA Astrophysics Data System (ADS)

Javadi, A.; Söllner, I.; Arcari, M.; Hansen, S. Lindskov; Midolo, L.; Mahmoodian, S.; Kiršanskė, G.; Pregnolato, T.; Lee, E. H.; Song, J. D.; Stobbe, S.; Lodahl, P.

2015-10-01

Strong non-linear interactions between photons enable logic operations for both classical and quantum-information technology. Unfortunately, non-linear interactions are usually feeble and therefore all-optical logic gates tend to be inefficient. A quantum emitter deterministically coupled to a propagating mode fundamentally changes the situation, since each photon inevitably interacts with the emitter, and highly correlated many-photon states may be created. Here we show that a single quantum dot in a photonic-crystal waveguide can be used as a giant non-linearity sensitive at the single-photon level. The non-linear response is revealed from the intensity and quantum statistics of the scattered photons, and contains contributions from an entangled photon-photon bound state. The quantum non-linearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.

Cross-phase modulation-induced spectral broadening in silicon waveguides.

PubMed

Zhang, Yanbing; Husko, Chad; Lefrancois, Simon; Rey, Isabella H; Krauss, Thomas F; Schröder, Jochen; Eggleton, Benjamin J

2016-01-11

We analytically and experimentally investigate cross-phase modulation (XPM) in silicon waveguides. In contrast to the well known result in pure Kerr media, the spectral broadening ratio of XPM to self-phase modulation is not two in the presence of either two-photon absorption (TPA) or free carriers. The physical origin of this change is different for each effect. In the case of TPA, this nonlinear absorption attenuates and slightly modifies the pulse shape due to differential absorption in the pulse peak and wings. When free carriers are present two different mechanisms modify the dynamics. First, free-carrier absorption performs a similar role to TPA, but is additionally asymmetric due to the delayed free-carrier response. Second, free-carrier dispersion induces an asymmetric blue phase shift which competes directly with the symmetric Kerr-induced XPM red shift. We confirm this analysis with pump-probe experiments in a silicon photonic crystal waveguide.

Stress-induced waveguides in Nd:YAG by simultaneous double-beam irradiation with femtosecond pulses

NASA Astrophysics Data System (ADS)

Castillo, Gabriel R.; Romero, Carolina; Lifante, Ginés; Jaque, Daniel; Chen, Feng; Varela, Óscar; García-García, Enrique; Méndez, Cruz; Camacho-López, Santiago; Vázquez de Aldana, Javier R.

2016-01-01

We report on the fabrication of stress-induced waveguides in Nd:YAG (neodymium doped yttrium aluminum garnet, Nd:Y3Al5O12) by simultaneous double-beam irradiation with femtosecond laser pulses. An interferometer was used to generate two femtosecond laser beams that, focused with certain lateral separation inside the crystal, produced two parallel damage tracks with a single scan. The propagation of the mechanical waves simultaneously created in both focal spots produced a highly symmetrical stress field that is clearly revealed in micro-luminescence maps. The optical properties of the double-beam waveguides are studied and compared to those of single-beam irradiation, showing relevant differences. The creation of more symmetric stress patterns and a slight reduction of propagation losses are explained in terms of the fact that simultaneous inscription allows for a drastic reduction in the magnitude of "incubation" effects related to the existence of pre-damaged states.

Efficient Second Harmonic Generation in 3D Nonlinear Optical-Lattice-Like Cladding Waveguide Splitters by Femtosecond Laser Inscription

PubMed Central

Nie, Weijie; Jia, Yuechen; Vázquez de Aldana, Javier R.; Chen, Feng

2016-01-01

Integrated photonic devices with beam splitting function are intriguing for a broad range of photonic applications. Through optical-lattice-like cladding waveguide structures fabricated by direct femtosecond laser writing, the light propagation can be engineered via the track-confined refractive index profiles, achieving tailored output beam distributions. In this work, we report on the fabrication of 3D laser-written optical-lattice-like structures in a nonlinear KTP crystal to implement 1 × 4 beam splitting. Second harmonic generation (SHG) of green light through these nonlinear waveguide beam splitter structures provides the capability for the compact visible laser emitting devices. With Type II phase matching of the fundamental wavelength (@ 1064 nm) to second harmonic waves (@ 532 nm), the frequency doubling has been achieved through this three-dimensional beam splitter. Under 1064-nm continuous-wave fundamental-wavelength pump beam, guided-wave SHG at 532 nm are measured with the maximum power of 0.65 mW and 0.48 mW for waveguide splitters (0.67 mW and 0.51 mW for corresponding straight channel waveguides), corresponding to a SH conversion efficiency of approximately ~14.3%/W and 13.9%/W (11.2%/W, 11.3%/W for corresponding straight channel waveguides), respectively. This work paves a way to fabricate compact integrated nonlinear photonic devices in a single chip with beam dividing functions. PMID:26924255

Efficient Second Harmonic Generation in 3D Nonlinear Optical-Lattice-Like Cladding Waveguide Splitters by Femtosecond Laser Inscription.

PubMed

Nie, Weijie; Jia, Yuechen; Vázquez de Aldana, Javier R; Chen, Feng

2016-02-29

Integrated photonic devices with beam splitting function are intriguing for a broad range of photonic applications. Through optical-lattice-like cladding waveguide structures fabricated by direct femtosecond laser writing, the light propagation can be engineered via the track-confined refractive index profiles, achieving tailored output beam distributions. In this work, we report on the fabrication of 3D laser-written optical-lattice-like structures in a nonlinear KTP crystal to implement 1 × 4 beam splitting. Second harmonic generation (SHG) of green light through these nonlinear waveguide beam splitter structures provides the capability for the compact visible laser emitting devices. With Type II phase matching of the fundamental wavelength (@ 1064 nm) to second harmonic waves (@ 532 nm), the frequency doubling has been achieved through this three-dimensional beam splitter. Under 1064-nm continuous-wave fundamental-wavelength pump beam, guided-wave SHG at 532 nm are measured with the maximum power of 0.65 mW and 0.48 mW for waveguide splitters (0.67 mW and 0.51 mW for corresponding straight channel waveguides), corresponding to a SH conversion efficiency of approximately ~14.3%/W and 13.9%/W (11.2%/W, 11.3%/W for corresponding straight channel waveguides), respectively. This work paves a way to fabricate compact integrated nonlinear photonic devices in a single chip with beam dividing functions.

Slow-light-enhanced energy efficiency for graphene microheaters on silicon photonic crystal waveguides

PubMed Central

Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn; Xiao, Sanshui; Mortensen, N. Asger; Dong, Jianji; Ding, Yunhong

2017-01-01

Slow light has been widely utilized to obtain enhanced nonlinearities, enhanced spontaneous emissions and increased phase shifts owing to its ability to promote light–matter interactions. By incorporating a graphene on a slow-light silicon photonic crystal waveguide, here we experimentally demonstrate an energy-efficient graphene microheater with a tuning efficiency of 1.07 nmmW−1 and power consumption per free spectral range of 3.99 mW. The rise and decay times (10–90%) are only 750 and 525 ns, which, to the best of our knowledge, are the fastest reported response times for microheaters in silicon photonics. The corresponding figure of merit of the device is 2.543 nW s, one order of magnitude better than results reported in previous studies. The influence of the length and shape of the graphene heater to the tuning efficiency is further investigated, providing valuable guidelines for enhancing the tuning efficiency of the graphene microheater. PMID:28181531

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

NASA Astrophysics Data System (ADS)

Lobanov, S. V.; Tikhodeev, S. G.; Gippius, N. A.; Maksimov, A. A.; Filatov, E. V.; Tartakovskii, I. I.; Kulakovskii, V. D.; Weiss, T.; Schneider, C.; Geßler, J.; Kamp, M.; Höfling, S.

2015-11-01

We study the polarization properties of light emitted by quantum dots that are embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the waveguide layer has been shown to result in a high circular polarization degree ρc of the quantum dot emission in the absence of external magnetic field. The physical nature of the phenomenon can be understood in terms of the reciprocity principle taking into account the structural symmetry. At the resonance wavelength, the magnitude of | ρc| is predicted to exceed 98%. The experimentally achieved value of | ρc|=81 % is smaller, which is due to the contribution of unpolarized light scattered by grating defects, thus breaking its periodicity. The achieved polarization degree estimated removing the unpolarized nonresonant background from the emission spectra can be estimated to be as high as 96%, close to the theoretical prediction.

Ultrafast all-optical flip-flop based on passive micro Sagnac waveguide ring with photonic crystal fiber.

PubMed

Xu, Ming; Yang, Wan; Hong, Tao; Kang, TangZhen; Ji, JianHua; Wang, Ke

2017-06-01

Ultrafast all-optical flip-flop based on a passive micro Sagnac waveguide ring is studied through theoretical analysis and numerical simulation in this paper. The types of D, R-S, J-K, and T flip-flop are designed by controlling the cross-phase modulation effect of lights in this special microring. The high nonlinearity of the hollow-core photonic crystal fiber is implanted on a chip to shorten the length of the ring and reduce input power. By sensible management, the pulse width ratio of the input and the control signal, problems of pulse narrowing, and residual pedestal at the out port are solved. The parameters affecting the performance of flip-flops are optimized. The results show that the all-optical flip-flops have stable performance, low power consumption, high transmission rate (up to 100  Gb/s), and response time in picosecond order. The small size microwaveguide structure is suitable for photonic integration.

Thin-film magnetless Faraday rotators for compact heterogeneous integrated optical isolators

NASA Astrophysics Data System (ADS)

Karki, Dolendra; Stenger, Vincent; Pollick, Andrea; Levy, Miguel

2017-06-01

This report describes the fabrication, characterization, and transfer of ultra-compact thin-film magnetless Faraday rotators to silicon photonic substrates. Thin films of magnetization latching bismuth-substituted rare-earth iron garnets were produced from commercially available materials by mechanical lapping, dice polishing, and crystal-ion-slicing. Eleven- μ m -thick films were shown to retain the 45 ° Faraday rotation of the bulk material to within 2 ° at 1.55 μ m wavelength without re-poling. Anti-reflection coated films evince 0.09 dB insertion loses and better than -20 dB extinction ratios. Lower extinction ratios than the bulk are ascribed to multimode propagation. Significantly larger extinction ratios are predicted for single-mode waveguides. Faraday rotation, extinction ratios, and insertion loss tests on He-ion implanted slab waveguides of the same material yielded similar results. The work culminated with bond alignment and transfer of 7 μ m -thick crystal-ion-sliced 50 × 480 μ m 2 films onto silicon photonic substrates.

Compact liquid crystal waveguide Fourier transform spectrometer for real-time gas sensing in NIR spectral band

NASA Astrophysics Data System (ADS)

Chao, Tien-Hsin; Lu, Thomas T.; Davis, Scott R.; Rommel, Scott D.; Farca, George; Luey, Ben; Martin, Alan; Anderson, Michael H.

2012-04-01

Jet Propulsion Lab and Vescent Photonics Inc. and are jointly developing an innovative ultra-compact (volume < 10 cm3), ultra-low power (<10 -3 Watt-hours per measurement and zero power consumption when not measuring), completely non-mechanical Liquid Crystal Waveguide Fourier Transform Spectrometer (LCWFTS) that will be suitable for a variety of remote-platform, in-situ measurements. These devices are made possible by novel electro-evanescent waveguide architecture, enabling "monolithic chip-scale" Electro Optic-FTS (EO-FTS) sensors. The potential performance of these EO-FTS sensors include: i) a spectral range throughout 0.4-5 μm (25000 - 2000 cm-1), ii) highresolution (Δλ<= 0.1 nm), iii) high-speed (< 1 ms) measurements, and iv) rugged integrated optical construction. This performance potential enables the detection and quantification of a large number of different atmospheric gases simultaneously in the same air mass and the rugged construction will enable deployment on previously inaccessible platforms. The sensor construction is also amenable for analyzing aqueous samples on remote floating or submerged platforms. We have reported [1] a proof-of-principle prototype LCWFTS sensor that has been demonstrated in the near- IR (range of 1450-1600 nm) with a 5 nm resolution. In this paper, we will report the recently built and tested LCWFTS test bed and the demonstration of a real-time gas sensing applications.

Application of photonic crystal defects in constructing all-optical switches, optical delay lines and low-cross-talk waveguide intersections for ultrashort optical pulses

NASA Astrophysics Data System (ADS)

Lan, Sheng; Sugimoto, Yoshimasa; Nishikawa, Satoshi; Ikeda, Naoki; Yang, Tao; Kanamoto, Kozyo; Ishikawa, Hiroshi; Asakawa, Kiyoshi

2002-07-01

We present a systematic study of coupled defects in photonic crystals (PCs) and explore their applications in constructing optical components and devices for ultrafast all-optical signal processing. First, we find that very deep band gaps can be generated in the impurity bands of coupled cavity waveguides (CCWs) by a small periodic modulation of defect modes. This phenomenon implies a high-efficiency all-optical switching mechanism. The switching mechanism can be easily extended from one-dimensional (1D) to two-dimensional and three-dimensional PC structures by utilizing the coupling of defect pairs which are generally present in PCs. Second, we suggest that CCWs with quasiflat and narrow impurity bands can be employed as efficient delay lines for ultrashort pulses. Criteria for designing such kind of CCWs have been derived from the analysis of defect coupling and the investigation of pulse transmission through various CCWs. It is found that the availability of quasiflat impurity bands depends not only on the intrinsic properties of the constituting defects but also on the detailed configuration of CCWs. In experiments, optical delay lines based on 1D monorail CCWs have been successfully fabricated and characterized. Finally, we have proposed a new mechanism for constructing waveguide intersections with broad bandwidth and low cross-talk.

Optimization Methods on Synthesis of Atomically Thin Layered Materials and Heterostructures

NASA Astrophysics Data System (ADS)

Temiz, Selcuk

Two dimensional (2D) materials have emerged as a new class of materials that only a few atoms thick. Owing to their low dimensionality, 2D materials bear rather unusual properties that do not exist in traditional three dimensional (3D) materials. Graphene, a single layer of carbon atoms arrange in a 2D hexagonal lattice, has started the revolutionary progress in materials science and condensed matter physics, and motivated intense research in other 2D materials such as h-BN, and layered metal dichalcogenides. Chemical vapor deposition (CVD) is the most studied bottom-up graphene production method for building the prototypes of next-generation electronic devices due to its scalability; however, there is still not an ultimate consensus of growth mechanisms on control the size and morphology of synthesized-crystals. In order to have better understanding the growth mechanisms, the role of oxygen exposure in the graphene growth has been comprehensively studied. The oxygen gas is introduced into the CVD reactor before and during the growth, and its effects on the morphology, crystallinity, and nucleation density of graphene are systematically studied. It is found that introducing oxygen during growth significantly improves the graphene crystallinity while pre-dosing oxygen before growth reduces the graphene nucleation density. The stacking of graphene and other layered materials in the lateral or vertical geometries can offer extended functionality by exploiting interfacial phenomena, quantum confinement and tunneling, which requires the interface between the layered materials be free of contaminates. The vertical heterostructures of CVD-grown graphene and h-BN single crystals are deeply investigated by analytical scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). It is shown that graphene contamination, undetectable using optical microscopy, is prevalent at the nanoscale, and the interfacial contamination between the layers reduces the interlayer coupling and ultimately undermines the graphene/h-BN heterostructures. Raman spectroscopy is a versatile and non-destructive technique for the identification of structural properties and phonon features of atomically thin layered materials. Especially, the second order resonant Raman spectroscopy, which can be applied to the resonance conditions in energy of the incoming photon and interband transitions of an electron in a crystal lattice, reveals additional phonon modes to typical Raman active modes in a spectra. Various 2D materials, including SnSe2, WSe2, SnS2, and MoTe2, and their heterostructures are fabricated by dry transfer method as a top-down approach. The vibrational characteristics of these 2D materials systems are unambiguously established by using second order Resonant Raman spectroscopy.

Ab initio Design of Noncentrosymmetric Metals: Crystal Engineering in Oxide Heterostructures

DTIC Science & Technology

2015-07-29

electronic, magnetic, and optical properties of these materials are reported. Where available the experimental studies of these systems through...RevModPhys.86.1189 James M. Rondinelli, Emmanouil Kioupakis. Predicting and Designing Optical Properties of Inorganic Materials , Annual Review of Materials ...Advances in oxide materials : Preparation, properties , performance, at University of California, Santa Barbara California, USA (August 28, 2014

229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

NASA Astrophysics Data System (ADS)

Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

2018-02-01

AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

InP on SOI devices for optical communication and optical network on chip

NASA Astrophysics Data System (ADS)

Fedeli, J.-M.; Ben Bakir, B.; Olivier, N.; Grosse, Ph.; Grenouillet, L.; Augendre, E.; Phillippe, P.; Gilbert, K.; Bordel, D.; Harduin, J.

2011-01-01

For about ten years, we have been developing InP on Si devices under different projects focusing first on μlasers then on semicompact lasers. For aiming the integration on a CMOS circuit and for thermal issue, we relied on SiO2 direct bonding of InP unpatterned materials. After the chemical removal of the InP substrate, the heterostructures lie on top of silicon waveguides of an SOI wafer with a separation of about 100nm. Different lasers or photodetectors have been achieved for off-chip optical communication and for intra-chip optical communication within an optical network. For high performance computing with high speed communication between cores, we developed InP microdisk lasers that are coupled to silicon waveguide and produced 100μW of optical power and that can be directly modulated up to 5G at different wavelengths. The optical network is based on wavelength selective circuits with ring resonators. InGaAs photodetectors are evanescently coupled to the silicon waveguide with an efficiency of 0.8A/W. The fabrication has been demonstrated at 200mm wafer scale in a microelectronics clean room for CMOS compatibility. For off-chip communication, silicon on InP evanescent laser have been realized with an innovative design where the cavity is defined in silicon and the gain localized in the QW of bonded InP hererostructure. The investigated devices operate at continuous wave regime with room temperature threshold current below 100 mA, the side mode suppression ratio is as high as 20dB, and the fibercoupled output power is {7mW. Direct modulation can be achieved with already 6G operation.

Opal-based photonic crystal with double photonic bandgap structure

NASA Astrophysics Data System (ADS)

Romanov, S. G.; Yates, H. M.; Pemble, M. E.; DeLa Rue, R. M.

2000-09-01

The interior surfaces of one part of a piece of artificial opal have been coated with GaP so that the remaining part of the opal crystal remains empty, thus forming a photonic heterostructure. Two Bragg resonances have been observed in the optical transmission and reflectance spectra. These two resonances were found to behave differently with changes in the polarization of the incident light and the angle of propagation of the light with respect to the (111) planes of opal. Depolarization of the light was observed to occur most effectively at frequencies within the stop-bands, apparently due to the re-coupling of the propagating electromagnetic wave to a different system of eigenmodes when it crosses the interface separating two parts of the double photonic crystal.

Photonic guiding structures in lithium niobate crystals produced by energetic ion beams

NASA Astrophysics Data System (ADS)

Chen, Feng

2009-10-01

A range of ion beam techniques have been used to fabricate a variety of photonic guiding structures in the well-known lithium niobate (LiNbO3 or LN) crystals that are of great importance in integrated photonics/optics. This paper reviews the up-to-date research progress of ion-beam-processed LiNbO3 photonic structures and reports on their fabrication, characterization, and applications. Ion beams are being used with this material in a wide range of techniques, as exemplified by the following examples. Ion beam milling/etching can remove the selected surface regions of LiNbO3 crystals via the sputtering effects. Ion implantation and swift ion irradiation can form optical waveguide structures by modifying the surface refractive indices of the LiNbO3 wafers. Crystal ion slicing has been used to obtain bulk-quality LiNbO3 single-crystalline thin films or membranes by exfoliating the implanted layer from the original substrate. Focused ion beams can either generate small structures of micron or submicron dimensions, to realize photonic bandgap crystals in LiNbO3, or directly write surface waveguides or other guiding devices in the crystal. Ion beam-enhanced etching has been extensively applied for micro- or nanostructuring of LiNbO3 surfaces. Methods developed to fabricate a range of photonic guiding structures in LiNbO3 are introduced. Modifications of LiNbO3 through the use of various energetic ion beams, including changes in refractive index and properties related to the photonic guiding structures as well as to the materials (i.e., electro-optic, nonlinear optic, luminescent, and photorefractive features), are overviewed in detail. The application of these LiNbO3 photonic guiding structures in both micro- and nanophotonics are briefly summarized.

Phase sensitive amplification in integrated waveguides (Conference Presentation)

NASA Astrophysics Data System (ADS)

Schroeder, Jochen B.; Zhang, Youngbin; Husko, Chad A.; LeFrancois, Simon; Eggleton, Benjamin J.

2017-02-01

Phase sensitive amplification (PSA) is an attractive technology for integrated all-optical signal processing, due to it's potential for noiseless amplification, phase regeneration and generation of squeezed light. In this talk I will review our results on implementing four-wave-mixing based PSA inside integrated photonic devices. In particular I will discuss PSA in chalcogenide ridge waveguides and silicon slow-light photonic crystals. We achieve PSA in both pump- and signal-degenerate schemes with maximum extinction ratios of 11 (silicon) and 18 (chalcogenide) dB. I will further discuss the influence of two-photon absorption and free carrier effects on the performance of silicon-based PSAs.

Broadband Optical Active Waveguides Written by Femtosecond Laser Pulses in Lithium Fluoride

NASA Astrophysics Data System (ADS)

Ismael, Chiamenti; Francesca, Bonfigli; Anderson, S. L. Gomes; Rosa, Maria Montereali; Larissa, N. da Costa; Hypolito, J. Kalinowski

2014-01-01

Broadband waveguiding through light-emitting strips directly written in a blank lithium fluoride crystal with a femtosecond laser is reported. Light guiding was observed at several optical wavelengths, from blue, 458 nm, to near-infrared, at 1550 nm. Visible photoluminescence spectra of the optically active F2 and F3+ color centers produced by the fs laser writing process were measured. The wavelength-dependent refractive index increase was estimated to be in the order of 10-3-10-4 in the visible and near-infrared spectral intervals, which is consistent with the stable formation of point defects in LiF.

Terahertz photonic crystals

NASA Astrophysics Data System (ADS)

Jian, Zhongping

This thesis describes the study of two-dimensional photonic crystals slabs with terahertz time domain spectroscopy. In our study we first demonstrate the realization of planar photonic components to manipulate terahertz waves, and then characterize photonic crystals using terahertz pulses. Photonic crystal slabs at the scale of micrometers are first designed and fabricated free of defects. Terahertz time domain spectrometer generates and detects the electric fields of single-cycle terahertz pulses. By putting photonic crystals into waveguide geometry, we successfully demonstrate planar photonic components such as transmission filters, reflection frequency-selective filters, defects modes as well as superprisms. In the characterization study of out-of-plane properties of photonic crystal slabs, we observe very strong dispersion at low frequencies, guided resonance modes at middle frequencies, and a group velocity anomaly at high frequencies. We employ Finite Element Method and Finite-Difference Time-Domain method to simulate the photonic crystals, and excellent agreement is achieved between simulation results and experimental results.

Electromagnetic crystal based terahertz thermal radiators and components

NASA Astrophysics Data System (ADS)

Wu, Ziran

This dissertation presents the investigation of thermal radiation from three-dimensional electromagnetic crystals (EMXT), as well as the development of a THz rapid prototyping fabrication technique and its application in THz EMXT components and micro-system fabrication and integration. First, it is proposed that thermal radiation from a 3-D EMXT would be greatly enhanced at the band gap edge frequency due to the redistribution of photon density of states (DOS) within the crystal. A THz thermal radiator could thus be built upon a THz EMXT by utilizing the exceptional emission peak(s) around its band gap frequency. The thermal radiation enhancement effects of various THz EMXT including both silicon and tungsten woodpile structures (WPS) and cubic photonic cavity (CPC) array are explored. The DOS of all three structures are calculated, and their thermal radiation intensities are predicted using Planck's Equation. These calculations show that the DOS of the silicon and tungsten WPS can be enhanced by a factor of 11.8 around 364 GHz and 2.6 around 406 GHz respectively, in comparison to the normal blackbody radiation at same frequencies. An enhancement factor of more than 100 is obtained in calculation from the CPC array. A silicon WPS with a band gap around 200 GHz has been designed and fabricated. Thermal emissivity of the silicon WPS sample is measured with a control blackbody as reference. And enhancements of the emission from the WPS over the control blackbody are observed at several frequencies quite consistent with the theoretical predictions. Second, the practical challenge of THz EMXT component and system fabrication is met by a THz rapid prototyping technique developed by us. Using this technique, the fabrications of several EMXTs with 3D electromagnetic band gaps in the 100-400 GHz range are demonstrated. Characterization of the samples via THz Time-domain Spectroscopy (THz-TDS) shows very good agreement with simulation, confirming the build accuracy of this prototyping approach. Third, an all-dielectric THz waveguide is designed, fabricated and characterized. The design is based on hollow-core EMXT waveguide, and the fabrication is implemented with the THz prototyping method. Characterization results of the waveguide power loss factor show good consistency with the simulation, and waveguide propagation loss as low as 0.03 dB/mm at 105 GHz is demonstrated. Several design parameters are also varied and their impacts on the waveguide performance investigated theoretically. Finally, a THz EMXT antenna based on expanding the defect radius of the EMXT waveguide to a horn shape is proposed and studied. The boresight directivity and main beam angular width of the optimized EMXT horn antenna is comparable with a copper horn antenna of the same dimensions at low frequencies, and much better than the copper horn at high frequencies. The EMXT antenna has been successfully fabricated via the same THz prototyping, and we believe this is the first time an EMXT antenna of this architecture is fabricated. Far-field measurement of the EMXT antenna radiation pattern is undergoing. Also, in order to integrate planar THz solid-state devices (especially source and detector) and THz samples under test with the potential THz micro-system fabricate-able by the prototyping approach, an EMXT waveguide-to-microstrip line transition structure is designed. The structure uses tapered solid dielectric waveguides on both ends to transit THz energy from the EMXT waveguide defect onto the microstrip line. Simulation of the transition structure in a back-to-back configuration yields about -15 dB insertion loss mainly due to the dielectric material loss. The coupling and radiation loss of the transition structure is estimated to be -2.115 dB. The fabrication and characterization of the transition system is currently underway. With all the above THz components realized in the future, integrated THz micro-systems manufactured by the same prototyping technique will be achieved, with low cost, high quality, self-sufficiency, and great customizability.

Disorder-induced losses in photonic crystal waveguides with line defects.

PubMed

Gerace, Dario; Andreani, Lucio Claudio

2004-08-15

A numerical analysis of extrinsic diffraction losses in two-dimensional photonic crystal slabs with line defects is reported. To model disorder, a Gaussian distribution of hole radii in the triangular lattice of airholes is assumed. The extrinsic losses below the light line increase quadratically with the disorder parameter, decrease slightly with increasing core thickness, and depend weakly on the hole radius. For typical values of the disorder parameter the calculated loss values of guided modes below the light line compare favorably with available experimental results.

Broadband dynamic phase matching of high-order harmonic generation by a high-peak-power soliton pump field in a gas-filled hollow photonic-crystal fiber.

PubMed

Serebryannikov, Evgenii E; von der Linde, Dietrich; Zheltikov, Aleksei M

2008-05-01

Hollow-core photonic-crystal fibers are shown to enable dynamically phase-matched high-order harmonic generation by a gigawatt soliton pump field. With a careful design of the waveguide structure and an appropriate choice of input-pulse and gas parameters, a remarkably broadband phase matching can be achieved for a soliton pump field and a large group of optical harmonics in the soft-x-ray-extreme-ultraviolet spectral range.

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

NASA Astrophysics Data System (ADS)

Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

Ultra-compact channel drop filter based on photonic crystal nanobeam cavities utilizing a resonant tunneling effect.

PubMed

Ge, Xiaochen; Shi, Yaocheng; He, Sailing

2014-12-15

The design, fabrication, and characterization of a compact photonic crystal nanobeam drop filter based on the tunneling effect of the degenerate modes are presented. The degeneracy was achieved by tuning the coupling distance between the nanobeam and input/output waveguides. The tunneling effect of degenerate resonances with different symmetries has been verified experimentally. Channel drop filters with an extinction ratio larger than 10 dB and a quality factor of ∼5000 have been experimentally demonstrated.

Silicon nano-membrane based photonic crystal microcavities for high sensitivity bio-sensing.

PubMed

Lai, Wei-Cheng; Chakravarty, Swapnajit; Zou, Yi; Chen, Ray T

2012-04-01

We experimentally demonstrated photonic crystal microcavity based resonant sensors coupled to photonic crystal waveguides in silicon nano-membrane on insulator for chemical and bio-sensing. Linear L-type microcavities are considered. In contrast to cavities with small mode volumes, but low quality factors for bio-sensing, we showed increasing the length of the microcavity enhances the quality factor of the resonance by an order of magnitude and increases the resonance wavelength shift while retaining compact device characteristics. Q~26760 and sensitivity down to 15 ng/ml and ~110 pg/mm2 in bio-sensing was experimentally demonstrated on silicon-on-insulator devices.

Quaternary BeMgZnO by plasma-enhanced molecular beam epitaxy for BeMgZnO/ZnO heterostructure devices

NASA Astrophysics Data System (ADS)

Ullah, M. B.; Toporkov, M.; Avrutin, V.; Özgür, Ü.; Smith, D. J.; Morkoç, H.

2017-02-01

We investigated the crystal structure, growth kinetics and electrical properties of BeMgZnO/ZnO heterostructures grown by Molecular Beam Epitaxy (MBE). Transmission Electron Microscopy (TEM) studies revealed that incorporation of Mg into the BeZnO solid solution eliminates the high angle grain boundaries that are the major structural defects in ternary BeZnO. The significant improvement of x-ray diffraction intensity from quaternary BeMgZnO alloy compared to ternary BeZnO was attributed to the reduction of lattice strain, which is present in the latter due to the large difference of covalent radii between Be and Zn (1.22 Å for Zn, 0.96 Å for Be). Incorporation of Mg, which has a larger covalent radius of 1.41Å, reduced the strain in BeMgZnO thin films and also enhanced Be incorporation on lattice sites in the wurtzite lattice. The Zn/(Be + Mg) ratio necessary to obtain single-crystal O-polar BeMgZnO on (0001) GaN/sapphire templates was found to increase with increasing substrate temperature:3.9, 6.2, and 8.3 at substrate temperatures of 450°C, 475°C, and 500°C, respectively. Based on analysis of photoluminescence spectra from Be0.03MgyZn0.97-yO and evolution of reflection high-energy electron diffraction patterns observed in situ during the MBE growth, it has been deduced that more negative formation enthalpy of MgO compared to ZnO and the increased surface mobility of Mg adatoms at elevated substrate temperatures give rise to the nucleation of a MgO-rich wurtzite phase at relatively low Zn/(Be + Mg) ratios. We have demonstrated both theoretically and experimentally that the incorporation of Be into the barrier in Zn-polar BeMgZnO/ZnO and O-polar ZnO/BeMgZnO polarization doped heterostructures allows the alignment of piezoelectric polarization vector with that of spontaneous polarization due to the change of strain sign, thus increasing the amount of net polarization. This made it possible to achieve Zn-polar BeMgZnO/ZnO heterostructures grown on GaN/sapphire templates with two-dimensional electron gas densities substantially exceeding those in Zn-polar MgZnO/ZnO and O-polar ZnO/MgZnO heterostructures with similar Mg content.

In-situ Optical Waveguides for Monitoring and Modifying Protein Crystal Growth

NASA Technical Reports Server (NTRS)

Gibson, Ursula; Osterberg, Ulf

2004-01-01

The use of electric fields in the growth of protein crystals was investigated, both theoretically and experimentally. We used dc, ac and optical fields to change the spatial distribution of proteins. Dc fields had only local effects, due to the conductivity of the growth solution. We found that for low frequency fields, movement of the buffer and salt ions dominated, and that for high frequency ac fields, &electrophoretic effects could be useful for relocating growing protein crystals. The most promising result was that for optical fields, a large gradient in the field could be used to capture a crystal, and observe growth in-situ. This concept could be developed into an experimental setup compatible with automated x-ray diffraction measurements in microgravity.

Concentration methods for high-resolution THz spectroscopy of nucleic-acid biomolecules and crystals

NASA Astrophysics Data System (ADS)

Brown, E. R.; Zhang, W.; Mendoza, E. A.; Kuznetsova, Y.; Brueck, S. R. J.; Rahman, M.; Norton, M. L.

2012-03-01

Biomolecules can exhibit low-lying vibrational modes in the THz region which are detectable in transmission given a strong molecular dipole moment and optical depth, and a spectrometer of adequate sensitivity. The nucleic acids are particularly interesting because of applications such as label-free gene assay, bio-agent detection, etc. However for nucleic acids, sample preparation and THz coupling are of paramount importance because of the strong absorption by liquid water and the small concentration of molecules present in physiological solutions. Concentration methods become necessary to make the THz vibrational modes detectable, either by concentrating the nucleic-acid sample itself in a small volume but large area, or by concentrating the THz radiation down to the volume of the sample. This paper summarizes one type of the first method: nanofluidic channel arrays for biological nucleic acids; and two types of the second method: (1) a circular-waveguide pinhole, and (2) a circular-waveguide, conical-horn coupling structure, both for DNA crystals. The first method has been demonstrated on a very short artificial nucleic acid [small-interfering (si) RNA (17-to-25 bp)] and a much longer, biological molecule [Lambda-phage DNA (48.5 kbp)]. The second method has been demonstrated on small (~100 micron) single crystals of DNA grown by the sitting-drop method.

Thermal energy and charge currents in multi-terminal nanorings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kramer, Tobias; Konrad-Zuse-Zentrum für Informationstechnik Berlin, 14195 Berlin; Kreisbeck, Christoph

2016-06-15

We study in experiment and theory thermal energy and charge transfer close to the quantum limit in a ballistic nanodevice, consisting of multiply connected one-dimensional electron waveguides. The fabricated device is based on an AlGaAs/GaAs heterostructure and is covered by a global top-gate to steer the thermal energy and charge transfer in the presence of a temperature gradient, which is established by a heating current. The estimate of the heat transfer by means of thermal noise measurements shows the device acting as a switch for charge and thermal energy transfer. The wave-packet simulations are based on the multi-terminal Landauer-Büttiker approachmore » and confirm the experimental finding of a mode-dependent redistribution of the thermal energy current, if a scatterer breaks the device symmetry.« less

Terahertz generation in mid-infrared quantum cascade lasers with a dual-upper-state active region

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fujita, Kazuue, E-mail: kfujita@crl.hpk.co.jp; Hitaka, Masahiro; Ito, Akio

2015-06-22

We report the performance of room temperature terahertz sources based on intracavity difference-frequency generation in mid-infrared quantum cascade lasers with a dual-upper-state (DAU) active region. DAU active region design is theoretically expected to produce larger optical nonlinearity for terahertz difference-frequency generation, compared to the active region designs of the bound-to-continuum type used previously. Fabricated buried heterostructure devices with a two-section buried distributed feedback grating and the waveguide designed for Cherenkov difference-frequency phase-matching scheme operate in two single-mode mid-infrared wavelengths at 10.7 μm and 9.7 μm and produce terahertz output at 2.9 THz with mid-infrared to terahertz conversion efficiency of 0.8 mW/W{sup 2}more » at room temperature.« less

Laser materials for the 0.67-microns to 2.5-microns range

NASA Technical Reports Server (NTRS)

Toda, Minoru; Zamerowski, Thomas J.; Ladany, Ivan; Martinelli, Ramon U.

1987-01-01

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

A systematic optimization of design parameters in strained silicon waveguides to further enhance the linear electro-optic effect

NASA Astrophysics Data System (ADS)

Olivares, Irene; Angelova, Todora I.; Pinilla-Cienfuegos, Elena; Sanchis, Pablo

2016-05-01

The electro-optic Pockels effect may be generated in silicon photonics structures by breaking the crystal symmetry by means of a highly stressing cladding layer (typically silicon nitride, SiN) deposited on top of the silicon waveguide. In this work, the influence of the waveguide parameters on the strain distribution and its overlap with the optical mode to enhance the Pockels effect has been analyzed. The optimum waveguide structure have been designed based on the definition and quantification of a figure of merit. The fabrication of highly stressing SiN layers by PECVD has also been optimized to characterize the designed structures. The residual stress has been controlled during the growth process by analyzing the influence of the main deposition parameters. Therefore, two identical samples with low and high stress conditions were fabricated and electro-optically characterized to test the induced Pockels effect and the influence of carrier effects. Electro-optical modulation was only measured in the sample with the high stressing SiN layer that could be attributed to the Pockels effect. Nevertheless, the influence of carriers were also observed thus making necessary additional experiments to decouple both effects.

Spin State Control using Oxide Interfaces in LaCoO3-based Heterostructures

NASA Astrophysics Data System (ADS)

Lee, Sangjae; Disa, Ankit; Walker, Frederick; Ahn, Charles

The flexibility of the spin degree of freedom of the Co 3d orbitals in LaCoO3 suggests that they can be changed through careful design of oxide heterostructures. Interfacial coupling and dimensional confinement can be used to control the magnetic exchange, crystal fields, and Hund's coupling, through orbital and charge reconstructions. These parameters control the balance between multiple spin configurations, thereby modifying the magnetic ordering of LaCoO3. We study (LaCoO3)m /(LaTiO3)2 heterostructures grown by molecular beam epitaxy, which allow interfacial charge transfer from Ti to Co, in addition to structural and dimensional constraints. The electronic polarization at the interface and consequent structural distortions suppress the ferromagnetism in the LaCoO3 layers. This effect extends well beyond the interface, with ferromagnetic order absent up to LaCoO3 layer thickness of m =10. We compare the properties of the LaCoO3/LaTiO3heterostructureswithLaCoO3/SrTiO3, to untangle how charge transfer and structural modifications control the spin and magnetic configuration in cobaltates.

Dislocation gliding and cross-hatch morphology formation in AIII-BV epitaxial heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovalskiy, V. A., E-mail: kovalva@iptm.ru; Vergeles, P. S.; Eremenko, V. G.

2014-12-08

An approach for understanding the origin of cross-hatch pattern (CHP) on the surface of lattice mismatched GaMnAs/InGaAs samples grown on GaAs (001) substrates is developed. It is argued that the motion of threading dislocations in the (111) slip planes during the relaxation of InGaAs buffer layer is more complicated process and its features are similar to the ones of dislocation half-loops gliding in plastically deformed crystals. The heterostructures were characterized by atomic force microscopy and electron beam induced current (EBIC). Detailed EBIC experiments revealed contrast features, which cannot be accounted for by the electrical activity of misfit dislocations at themore » buffer/substrate interface. We attribute these features to specific extended defects (EDs) generated by moving threading dislocations in the partially relaxed InGaAs layers. We believe that the core topology, surface reconstruction, and elastic strains from these EDs accommodated in slip planes play an important role in the CHP formation. The study of such electrically active EDs will allow further understanding of degradation and changes in characteristics of quantum devices based on strained heterostructures.« less

Tuning the physical properties in strontium iridate heterostructures

NASA Astrophysics Data System (ADS)

Nichols, John; Meyer, Tricia; Lee, Ho Nyung

2015-03-01

Strontium iridate (Srn+1IrnO3n+1) has received lots of attention recently for its potential to reveal novel physical phenomena due to strong spin-orbital coupling with an interaction energy comparable to that of the on-site Coulomb interaction and crystal field splitting. The coexistence of fundamental interactions has created an exotic Jeff = 1/2 antiferromagnetic insulating ground state in Sr2IrO4. In particular, it is known that this system can be driven into a metallic state with the simultaneous increase in dimensionality (n) and strain. We have investigated the effects of electron confinement by interfacing strontium iridates with other perovskite oxides. We have synthesized thin film heterostructures, SrIrO3/AMO3 (A = Sr, La; B = Ti, Mn, Rh), layer-by-layer with pulsed laser deposition equipped with reflection high-energy electron diffraction. Based on investigations with x-ray diffraction, dc transport, SQUID magnetometry, and various spectroscopic measurements, we will present that the physical properties of the heterostructures are strongly dependent on spatial confinement and epitaxial strain. *This work was supported by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division.

Thin film GaP for solar cell application

NASA Astrophysics Data System (ADS)

Morozov, I. A.; Gudovskikh, A. S.; Kudryashov, D. A.; Nikitina, E. V.; Kleider, J.-P.; Myasoedov, A. V.; Levitskiy, V.

2016-08-01

A new approach to the silicon based heterostructures technology consisting of the growth of III-V compounds (GaP) on a silicon substrate by low-temperature plasma enhanced atomic layer deposition (PE-ALD) is proposed. The basic idea of the method is to use a time modulation of the growth process, i.e. time separated stages of atoms or precursors transport to the growing surface, migration over the surface, and crystal lattice relaxation for each monolayer. The GaP layers were grown on Si substrates by PE-ALD at 350°C with phosphine (PH3) and trimethylgallium (TMG) as sources of III and V atoms. Scanning and transmission electron microscopy demonstrate that the grown GaP films have homogeneous amorphous structure, smooth surface and a sharp GaP/Si interface. The GaP/Si heterostructures obtained by PE-ALD compare favourably to that conventionally grown by molecular beam epitaxy (MBE). Indeed, spectroscopic ellipsometry measurements indicate similar interband optical absorption while photoluminescence measurements indicate higher charge carrier effective lifetime. The better passivation properties of GaP layers grown by PE-ALD demonstrate a potential of this technology for new silicon based photovoltaic heterostructure

Degradation sources in GaAs--AlGaAs double-heterostructure lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, R.; Nakashima, H.; Kishino, S.

1975-07-01

Several sources of the dark-line defect (DLD) that causes rapid degradation of GaAs-AlGaAs double-heterostructure (DH) lasers have been identified by means of photoluminescence (PL) topography and a laser-induced degradation technique. All the sources that have been identified correspond to crystal defects, among which dark-spot defects (DSD) that are native to as-grown wafers are found to be most important. The growth and propagation processes of DLDs and DSDs have also been investigated. These defects are found to be highly mobile under high-intensity laser pumping. The correlation between the substrate dislocations and the DSDs has been examined by etching and x-ray topography.more » Although most DSDs correspond to etch-pits in epilayers, they are not always correlated with substrate dislocations. (auth)« less

Defect observations of Ni/AlGaN/GaN Schottky contacts on Si substrates using scanning internal photoemission microscopy

NASA Astrophysics Data System (ADS)

Shiojima, Kenji; Konishi, Hiroaki; Imadate, Hiroyoshi; Yamaoka, Yuya; Matsumoto, Kou; Egawa, Takashi

2018-04-01

We have demonstrated the use of scanning internal photoemission microscopy (SIPM) to characterize crystal defects in an AlGaN/GaN heterostructure grown on Si substrates. SIPM enabled the visualization of unusually grown regions owing to cracking of the Si substrates. In these regions, photocurrent was large, which was consistent with leaky current-voltage characteristics. We also found smaller photoyield regions, which may originate from the Al-rich AlGaN regions on hillocks. We confirmed the usefulness of SIPM for investigating the inhomogeneity of crystal quality and electrical characteristics from macroscopic viewpoints.

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

NASA Astrophysics Data System (ADS)

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; Unocic, Raymond R.; Rack, Philip D.; Baddorf, Arthur P.; Ivanov, Ilia N.; Lavrik, Nickolay V.; List, Frederick; Gupta, Nitant; Bets, Ksenia V.; Yakobson, Boris I.; Smirnov, Sergei N.

2018-03-01

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice1 in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection2 approach, which is now realized in 2D geometry. The method relies on `self-selection' of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h-1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.

Crystal phase-based epitaxial growth of hybrid noble metal nanostructures on 4H/fcc Au nanowires

NASA Astrophysics Data System (ADS)

Lu, Qipeng; Wang, An-Liang; Gong, Yue; Hao, Wei; Cheng, Hongfei; Chen, Junze; Li, Bing; Yang, Nailiang; Niu, Wenxin; Wang, Jie; Yu, Yifu; Zhang, Xiao; Chen, Ye; Fan, Zhanxi; Wu, Xue-Jun; Chen, Jinping; Luo, Jun; Li, Shuzhou; Gu, Lin; Zhang, Hua

2018-03-01

Crystal-phase engineering offers opportunities for the rational design and synthesis of noble metal nanomaterials with unusual crystal phases that normally do not exist in bulk materials. However, it remains a challenge to use these materials as seeds to construct heterometallic nanostructures with desired crystal phases and morphologies for promising applications such as catalysis. Here, we report a strategy for the synthesis of binary and ternary hybrid noble metal nanostructures. Our synthesized crystal-phase heterostructured 4H/fcc Au nanowires enable the epitaxial growth of Ru nanorods on the 4H phase and fcc-twin boundary in Au nanowires, resulting in hybrid Au-Ru nanowires. Moreover, the method can be extended to the epitaxial growth of Rh, Ru-Rh and Ru-Pt nanorods on the 4H/fcc Au nanowires to form unique hybrid nanowires. Importantly, the Au-Ru hybrid nanowires with tunable compositions exhibit excellent electrocatalytic performance towards the hydrogen evolution reaction in alkaline media.

Generation and transfer of single photons on a photonic crystal chip.

PubMed

Englund, Dirk; Faraon, Andrei; Zhang, Bingyang; Yamamoto, Yoshihisa; Vucković, Jelena

2007-04-30

We present a basic building block of a quantum network consisting of a quantum dot coupled to a source cavity, which in turn is coupled to a target cavity via a waveguide. The single photon emission from the high-Q/V source cavity is characterized by twelve-fold spontaneous emission (SE) rate enhancement, SE coupling efficiency beta ~ 0.98 into the source cavity mode, and mean wavepacket indistinguishability of ~67%. Single photons are efficiently transferred into the target cavity via the waveguide, with a target/source field intensity ratio of 0.12 +/- 0.01. This system shows great promise as a building block of future on-chip quantum information processing systems.

Gap maps and intrinsic diffraction losses in one-dimensional photonic crystal slabs.

PubMed

Gerace, Dario; Andreani, Lucio Claudio

2004-05-01

A theoretical study of photonic bands for one-dimensional (1D) lattices embedded in planar waveguides with strong refractive index contrast is presented. The approach relies on expanding the electromagnetic field on the basis of guided modes of an effective waveguide, and on treating the coupling to radiative modes by perturbation theory. Photonic mode dispersion, gap maps, and intrinsic diffraction losses of quasi guided modes are calculated for the case of self-standing membranes as well as for silicon-on-insulator structures. Photonic band gaps in a waveguide are found to depend strongly on the core thickness and on polarization, so that the gaps for transverse electric and transverse magnetic modes most often do not overlap. Radiative losses of quasiguided modes above the light line depend in a nontrivial way on structure parameters, mode index, and wave vector. The results of this study may be useful for the design of integrated 1D photonic structures with low radiative losses.