Spin valves with spin-engineered domain-biasing scheme

NASA Astrophysics Data System (ADS)

Lu, Z. Q.; Pan, G.

2003-06-01

Synthetic spin-filter spin valves with spin-engineered biasing scheme "sub/Ta/NiFe/IrMn/NiFe/NOL/Cu1/CoFe/Cu2/CoFe/Ru/CoFe/IrMn/Ta" were developed. In the structure, the orthogonal magnetic configuration for biasing and pinning field was obtained by one-step magnetic annealing process by means of spin flop, which eliminated the need for two antiferromagnetic materials with distinctively different blocking temperatures and two-step magnetic annealing as in conventional exchange biasing scheme. The longitudinal domain biasing of spin valves was achieved by using interlayer coupling field through Cu1 spacer. By adjusting the thickness of the Cu1 layer, the interlayer coupling biasing field can provide domain stabilization and was sufficiently strong to constrain the magnetization in coherent rotation. This can prevent Barkhausen noises associated with magnetization reversal. We report here a proof of concept study of such a domain-biasing scheme, which has its important technological applications in nanoscale spin valve and magnetic tunneling junction read heads and other spintronic devices.

Two interpenetrating Cu{sup II}/Ni{sup II}-coordinated polymers based on an unsymmetrical bifunctional N/O-tectonic: Syntheses, structures and magnetic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yong-Liang; Department of Chemistry and Chemical Engineering, Shaanxi Key Laboratory of Comprehensive Utilization of Tailings Resources, Shang Luo University, Shang Luo 726000; Wu, Ya-Pan

2015-03-15

Two new interpenetrating Cu{sup II}/Ni{sup II} coordination polymers, based on a unsymmetrical bifunctional N/O-tectonic 3-(pyrid-4′-yl)-5-(4″-carbonylphenyl)-1,2,4-triazolyl (H{sub 2}pycz), ([Cu-(Hpycz){sub 2}]·2H{sub 2}O){sub n} (1) and ([Ni(Hpycz){sub 2}]·H{sub 2}O){sub n} (2), have been solvothermally synthesized and structure characterization. Single crystal X-ray analysis indicates that compound 1 shows 2-fold parallel interpenetrated 4{sup 4}-sql layers with the same handedness. The overall structure of 1 is achiral—in each layer of doubly interpenetrating nets, the two individual nets have the opposite handedness to the corresponding nets in the adjoining layers—while 2 features a rare 8-fold interpenetrating 6{sup 6}-dia network that belongs to class IIIa interpenetration. In addition,more » compounds 1 and 2 both show similar paramagnetic characteristic properties. - Graphical abstract: Two new Cu(II)/Ni(II) coordination polymers present 2D parallel 2-fold interpenetrated 4{sup 4}-sql layers and a rare 3D 8-fold interpenetrating 6{sup 6}-dia network. In addition, magnetic susceptibility measurements show similar paramagnetic characteristic for two complexes. - Highlights: • A new unsymmetrical bifunctional N/O-tectonic as 4-connected spacer. • A 2-fold parallel interpenetrated sql layer with the same handedness. • A rare 8-fold interpenetrating dia network (class IIIa)« less

Surfactant-assisted atomic-level engineering of spin valves

NASA Astrophysics Data System (ADS)

Chopra, Harsh Deep; Yang, David X.; Chen, P. J.; Egelhoff, W. F.

2002-03-01

Surfactant Ag is successfully used to atomically engineer interfaces and nanostructure in NiO-Co-Cu-based bottom spin valves. At a Cu spacer thickness of 1.5 nm, a strong net ferromagnetic (or positive) coupling >13.92 kA/m (>175 Oe) between NiO-pinned and ``free'' Co layers leads to a negligible ``giant'' magnetoresistance (GMR) effect (<0.7%) in Ag-free samples. In contrast, the net ferromagnetic coupling could be reduced by a factor of 2 or more in spin valves deposited in the presence of ~1-3 ML of surfactant Ag, and such samples exhibit more than an order of magnitude increase in GMR (8.5-13 %). Based on transmission electron microscopy (TEM), a large contribution to net ferromagnetic coupling in Ag-free samples could be directly attributed to the presence of numerous pinholes. In situ x-ray photoelectron spectroscopy and TEM studies show that surfactant Ag floats out to the surface during deposition of successive Co and Cu overlayers, leaving behind smooth interfaces and continuous layers that are less prone to intermixing and pinholes. The use of surfactants in the present study also illustrates their potential use in atomic engineering of magnetoelectronics devices and other multilayer systems.

Generator stator core vent duct spacer posts

DOEpatents

Griffith, John Wesley; Tong, Wei

2003-06-24

Generator stator cores are constructed by stacking many layers of magnetic laminations. Ventilation ducts may be inserted between these layers by inserting spacers into the core stack. The ventilation ducts allow for the passage of cooling gas through the core during operation. The spacers or spacer posts are positioned between groups of the magnetic laminations to define the ventilation ducts. The spacer posts are secured with longitudinal axes thereof substantially parallel to the core axis. With this structure, core tightness can be assured while maximizing ventilation duct cross section for gas flow and minimizing magnetic loss in the spacers.

Magnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layer

NASA Astrophysics Data System (ADS)

Chien, Wei-Chih; Yao, Yeong-Der; Wu, Jiann-Kuo; Lo, Chi-Kuen; Hung, Ruei-Feng; Lan, M. D.; Lin, Pang

2009-02-01

Magnetoimpedance behaviors and thermal effects of a Co/Cu/Co/Py pseudo-spin-valve (PSV) with a nano-oxide layer (NOL) were studied. The PSV can be regarded as a combination of resistances, inductances, and capacitances. In addition, equivalent circuit theory can be used to analyze the ac behavior of this system. The imaginary part of the magnetoimpedance (magnetoreactance) ratio is more than 1700% at the resonance frequency (fr)=476 kHz at room temperature (RT). The dc magnetoresistance (MR) ratio decreases as the annealing temperature increases because the NOL is formed at the interface between the spacer and the magnetic layer. The NOL deteriorates the differential spin scattering and reduces the dc MR ratio. Impedance spectroscopy was utilized to analyze the capacitance effect from NOL after annealing. The effective capacitance of the PSV was 21.8 nF at RT and changed to 11.8 nF after annealing at 200 °C. The useful equivalent capacitor circuit not only is a nondestructive measurement technology but can also explain the experimental results and prove the formation of the NOL.

Magnetic and structural X-ray dichroïsms of metallic multilayers

NASA Astrophysics Data System (ADS)

Pizzini, Stefania; Fontaine, A.; Baudelet, F.; Minr, S.; Giorgetti, C.; Dartyge, E.; Bobo, J. F.; Piecuch, M.

1995-05-01

Fe/Cu and Co/Cu multilayers are intensively studied because of their exceptional magnetic properties, i.e., their giant magnetoresistance and the oscillations of the magnetic coupling between magnetic layers as a function of the thickness of the copper spacer [S.S. Parkin et al., Phys. Rev. Lett. 66 (1991) 2152; F. Petroff et al., Phys. Rev. B 44 (1991) 5355]. Spectroscopic approaches to the understanding of the coupling of ferromagnetic layers through a noble metal layer have been recently introduced, in particular spin-resolved photoemission [N.B. Brookes et al., Phys. Rev. Lett. 67 (1991) 354; C. Carbone et al., PRL 71 (1993) 2805] inverse photoemission [J.E. Ortega et al., Phys. Rev. Lett. 69 (1992) 844; Phys. Rev. B 47 (1993) 1540] and magnetic circular dichroism [S. Pizzini et al., MRS Symp. Proc., vol. 313 (1993); M.G. Samant et al. Phys. Rev. Lett. 72 (1994) 2152; S. Pizzini et al., Phys. Rev. Lett. 74 (1995) 1470]. X-ray absorption spectroscopy appears to be effective both for determination of the local structure, specific to the bidimensionality of the system but also for the electron symmetry-dependent evaluation of the spin polarisation of the noble metal as well as the magnetic element.

Highly efficient monolithic dye-sensitized solar cells.

PubMed

Kwon, Jeong; Park, Nam-Gyu; Lee, Jun Young; Ko, Min Jae; Park, Jong Hyeok

2013-03-01

Monolithic dye-sensitized solar cells (M-DSSCs) provide an effective way to reduce the fabrication cost of general DSSCs since they do not require transparent conducting oxide substrates for the counter electrode. However, conventional monolithic devices have low efficiency because of the impediments resulting from counter electrode materials and spacer layers. Here, we demonstrate highly efficient M-DSSCs featuring a highly conductive polymer combined with macroporous polymer spacer layers. With M-DSSCs based on a PEDOT/polymer spacer layer, a power conversion efficiency of 7.73% was achieved, which is, to the best of our knowledge, the highest efficiency for M-DSSCs to date. Further, PEDOT/polymer spacer layers were applied to flexible DSSCs and their cell performance was investigated.

Three-dimensional scanning near field optical microscopy (3D-SNOM) imaging of random arrays of copper nanoparticles: implications for plasmonic solar cell enhancement.

PubMed

Ezugwu, Sabastine; Ye, Hanyang; Fanchini, Giovanni

2015-01-07

In order to investigate the suitability of random arrays of nanoparticles for plasmonic enhancement in the visible-near infrared range, we introduced three-dimensional scanning near-field optical microscopy (3D-SNOM) imaging as a useful technique to probe the intensity of near-field radiation scattered by random systems of nanoparticles at heights up to several hundred nm from their surface. We demonstrated our technique using random arrays of copper nanoparticles (Cu-NPs) at different particle diameter and concentration. Bright regions in the 3D-SNOM images, corresponding to constructive interference of forward-scattered plasmonic waves, were obtained at heights Δz ≥ 220 nm from the surface for random arrays of Cu-NPs of ∼ 60-100 nm in diameter. These heights are too large to use Cu-NPs in contact of the active layer for light harvesting in thin organic solar cells, which are typically no thicker than 200 nm. Using a 200 nm transparent spacer between the system of Cu-NPs and the solar cell active layer, we demonstrate that forward-scattered light can be conveyed in 200 nm thin film solar cells. This architecture increases the solar cell photoconversion efficiency by a factor of 3. Our 3D-SNOM technique is general enough to be suitable for a large number of other applications in nanoplasmonics.

Triple-glazed insulating unit with improved edge insulation

DOEpatents

Goodwin, George B.; Buchanan, Michael J.

2016-06-07

An insulating unit includes a first spacer frame between first and second sheets, e.g. glass sheets, and a second spacer frame between the second sheet and a third sheet. A first surface of the first spacer frame is adhered to inner surface of the first sheet, and an opposite second surface of the first spacer frame is adhered to a first surface of the second sheet, by a moisture impervious adhesive layer. A first outer surface of the second spacer frame is adhered to a second surface of the second sheet, and an opposite second outer surface of the second spacer frame is adhered to an inner surface of the third sheet, by the adhesive layer. The first spacer frame and the second spacer frame have an offset of greater than zero.

Material optimization of multi-layered enhanced nanostructures

NASA Astrophysics Data System (ADS)

Strobbia, Pietro

The employment of surface enhanced Raman scattering (SERS)-based sensing in real-world scenarios will offer numerous advantages over current optical sensors. Examples of these advantages are the intrinsic and simultaneous detection of multiple analytes, among many others. To achieve such a goal, SERS substrates with throughput and reproducibility comparable to commonly used fluorescence sensors have to be developed. To this end, our lab has discovered a multi-layer geometry, based on alternating films of a metal and a dielectric, that amplifies the SERS signal (multi-layer enhancement). The advantage of these multi-layered structures is to amplify the SERS signal exploiting layer-to-layer interactions in the volume of the structures, rather than on its surface. This strategy permits an amplification of the signal without modifying the surface characteristics of a substrate, and therefore conserving its reproducibility. Multi-layered structures can therefore be used to amplify the sensitivity and throughput of potentially any previously developed SERS sensor. In this thesis, these multi-layered structures were optimized and applied to different SERS substrates. The role of the dielectric spacer layer in the multi-layer enhancement was elucidated by fabricating spacers with different characteristics and studying their effect on the overall enhancement. Thickness, surface coverage and physical properties of the spacer were studied. Additionally, the multi-layered structures were applied to commercial SERS substrates and to isolated SERS probes. Studies on the dependence of the multi-layer enhancement on the thickness of the spacer demonstrated that the enhancement increases as a function of surface coverage at sub-monolayer thicknesses, due to the increasing multi-layer nature of the substrates. For fully coalescent spacers the enhancement decreases as a function of thickness, due to the loss of interaction between proximal metallic films. The influence of the physical properties of the spacer on the multi-layer enhancement were also studied. The trends in Schottky barrier height, interfacial potential and dielectric constant were isolated by using different materials as spacers (i.e., TiO2, HfO2, Ag 2O and Al2O3). The results show that the bulk dielectric constant of the material can be used to predict the relative magnitude of the multi-layer enhancement, with low dielectric constant materials performing more efficiently as spacers. Optimal spacer layers were found to be ultrathin coalescent films (ideally a monolayer) of low dielectric constant materials. Finally, multi-layered structures were observed to be employable to amplify SERS in drastically different substrate geometries. The multi-layered structures were applied to disposable commercial SERS substrates (i.e., Klarite). This project involved the regeneration of the used substrates, by stripping and redepositing the gold coating layer, and their amplification, by using the multi-layer geometry. The latter was observed to amplify the sensitivity of the substrates. Additionally, the multi-layered structures were applied to probes dispersed in solution. Such probes were observed to yield stronger SERS signal when optically trapped and to reduce the background signal. The application of the multi-layered structures on trapped probes, not only further amplified the SERS signal, but also increased the maximum number of applicable layers for the structures.

Current induced magnetization switching in Co/Cu/Ni-Fe nanopillar with orange peel coupling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aravinthan, D.; Daniel, M.; Sabareesan, P.

The impact of orange peel coupling on spin current induced magnetization switching in a Co/Cu/Ni-Fe nanopillar device is investigated by solving the switching dynamics of magnetization of the free layer governed by the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. The value of the critical current required to initiate the magnetization switching is calculated analytically by solving the LLGS equation and verified the same through numerical analysis. Results of numerical simulation of the LLGS equation using Runge-Kutta fourth order procedure shows that the presence of orange peel coupling between the spacer and the ferromagnetic layers reduces the switching time of the nanopillar device frommore » 67 ps to 48 ps for an applied current density of 4 × 10{sup 12}Am{sup −2}. Also, the presence of orange peel coupling reduces the critical current required to initiate switching, and in this case, from 1.65 × 10{sup 12}Am{sup −2} to 1.39 × 10{sup 12}Am{sup −2}.« less

Atomic engineering of spin valves using Ag as a surfactant

NASA Astrophysics Data System (ADS)

Yang, David X.; Shashishekar, B.; Chopra, Harsh Deep; Chen, P. J.; Egelhoff, W. F.

2001-06-01

In this study, dc magnetron sputtered NiO (50 nm)/Co (2.5 nm)/Cu(1.5 nm)/Co (3.0 nm) bottom spin valves were studied with and without Ag as a surfactant. At Cu spacer thickness of 1.5 nm, a strong positive coupling >13.92 kA/m (>175 Oe) between NiO-pinned and "free" Co layers leads to a negligible giant magnetoresistance (GMR) effect (<0.7%) in Ag-free samples. In contrast, spin valves deposited in the presence of ≈1 monolayer of surfactant Ag have sufficiently reduced coupling, 5.65 kA/m (71 Oe), which results in an order of magnitude increase in GMR (8.5%). Using transmission electron microscopy (TEM), the large positive coupling in Ag-free samples could directly be attributed to the presence of numerous pinholes. In situ x-ray photoelectron spectroscopy shows that, in Ag-containing samples, the large mobile Ag atoms float out to the surface during successive growth of Co and Cu layers. Detailed TEM studies show that surfactant Ag leaves behind smoother interfaces less prone to pinholes. The use of surfactants also illustrates their efficacy in favorably altering the magnetic characteristics of GMR spin valves, and their potential use in other magnetoelectronics devices and multilayer systems.

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru; Preobrazhenskii, V. V.

2016-11-15

The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancementmore » of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.« less

Fabrication of overlaid nanopattern arrays for plasmon memory

NASA Astrophysics Data System (ADS)

Okabe, Takao; Wadayama, Hisahiro; Taniguchi, Jun

2018-01-01

Stacking technique of nanopattern array is gathering attention to fabricate next generation data storage such as plasmon memory. This technique provides multi- overlaid nanopatterns which made by nanoimprint lithography. In the structure, several metal nanopatterned layer and resin layer as a spacer are overlaid alternately. The horizontal position of nanopatterns to under nanopatterns and thickness of resin layer as spacer should be controlled accurately, because these parameters affect reading performance and capacity of plasmon memory. In this study, we developed new alignment mark to fabricate multi- overlaid nanopatterns. The alignment accuracy with the order of 300 nm was demonstrated for Ag nanopatterns in 2 layers. The alignment mark can measure the thickness of spacer. The relationship of spacer thickness and position of scale bar on the alignment mark was measured. The usefulness of the alignment mark for highdensity plasmon memory is shown.

Effects of spacer orientations on the cake formation during membrane fouling: Quantitative analysis based on 3D OCT imaging.

PubMed

Liu, Xin; Li, Weiyi; Chong, Tzyy Haur; Fane, Anthony G

2017-03-01

Spacer design plays an important role in improving the performance of membrane processes for water/wastewater treatment. This work focused on a fundamental issue of spacer design, i.e., investigating the effects of spacer orientations on the fouling behavior during a membrane process. A series of fouling experiments with different spacer orientation were carried out to in situ characterize the formation of a cake layer in a spacer unit cell via 3D optical coherence tomography (OCT) imaging. The cake layers formed at different times were digitalized for quantitatively analyzing the variation in the cake morphology as a function of time. In particular, the local deposition rates were evaluated to determine the active regions where the instantaneous changes in deposit thickness were significant. The characterization results indicate that varying the spacer orientation could substantially change the evolution of membrane fouling by particulate foulants and thereby result in a cake layer with various morphologies; the competition between growth and erosion at different locations would instantaneously respond to the micro-hydrodynamic environment that might change with time. This work confirms that the OCT-based characterization method is a powerful tool for exploring novel spacer design. Copyright © 2016 Elsevier Ltd. All rights reserved.

GMR in magnetic multilayers from a first principles band structure Kubo-Greenwood approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, F.; Freeman, A.J.

1998-07-01

The authors employ the Kubo-Greenwood formula to investigate from first-principles the giant magnetoresistance in Fe{sub m}M{sub n} (M = V, Cr, Mn and Cu) superlattices. The results indicate that MR can arise from band structure changes from ferromagnetic to anti-ferromagnetic alignments. Quantum confinement in the perpendicular direction is induced by the potential steps between the Fe and spacer layers and causes a much larger MR in the current-perpendicular-to-the-plane (CPP) geometry than in the current-in-plane (CIP) geometry. In the presence of the spin-orbit coupling interaction, MR is found to be reduced by spin-channel mixing.

Long-range coupling of electron-hole pairs in spatially separated organic donor-acceptor layers

PubMed Central

Nakanotani, Hajime; Furukawa, Taro; Morimoto, Kei; Adachi, Chihaya

2016-01-01

Understanding exciton behavior in organic semiconductor molecules is crucial for the development of organic semiconductor-based excitonic devices such as organic light-emitting diodes and organic solar cells, and the tightly bound electron-hole pair forming an exciton is normally assumed to be localized on an organic semiconducting molecule. We report the observation of long-range coupling of electron-hole pairs in spatially separated electron-donating and electron-accepting molecules across a 10-nanometers-thick spacer layer. We found that the exciton energy can be tuned over 100 megaelectron volts and the fraction of delayed fluorescence can be increased by adjusting the spacer-layer thickness. Furthermore, increasing the spacer-layer thickness produced an organic light-emitting diode with an electroluminescence efficiency nearly eight times higher than that of a device without a spacer layer. Our results demonstrate the first example of a long-range coupled charge-transfer state between electron-donating and electron-accepting molecules in a working device. PMID:26933691

76 FR 70117 - Notice of Intent To Grant an Exclusive License; Voltage Networking, LLC

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-10

... dielectric layer and device made therefrom''; Patent No. 6,541,288 entitled ``Method of determining... sacrificial spacer layer''; Patent No. 7,442,577 entitled ``Method of fabricating a patterned device using sacrificial spacer layer''; Patent No. 7,678,593 entitled ``Method of fabricating optical device using...

THERMAL INSULATION SYSTEMS

NASA Technical Reports Server (NTRS)

Augustynowicz, Stanislaw D. (Inventor); Fesmire, James E. (Inventor)

2005-01-01

Thermal insulation systems and with methods of their production. The thermal insulation systems incorporate at least one reflection layer and at least one spacer layer in an alternating pattern. Each spacer layer includes a fill layer and a carrier layer. The fill layer may be separate from the carrier layer, or it may be a part of the carrier layer, i.e., mechanically injected into the carrier layer or chemically formed in the carrier layer. Fill layers contain a powder having a high surface area and low bulk density. Movement of powder within a fill layer is restricted by electrostatic effects with the reflection layer combined with the presence of a carrier layer, or by containing the powder in the carrier layer. The powder in the spacer layer may be compressed from its bulk density. The thermal insulation systems may further contain an outer casing. Thermal insulation systems may further include strips and seams to form a matrix of sections. Such sections serve to limit loss of powder from a fill layer to a single section and reduce heat losses along the reflection layer.

Effect of spacer layer thickness on structural and optical properties of multi-stack InAs/GaAsSb quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yeongho; Ban, Keun-Yong, E-mail: kban1@asu.edu; Honsberg, Christiana B.

2015-10-26

The structural and optical properties of ten-stack InAs/GaAsSb quantum dots (QDs) with different spacer layer thicknesses (d{sub s} = 2, 5, 10, and 15 nm) are reported. X-ray diffraction analysis reveals that the strain relaxation of the GaAsSb spacers increases linearly from 0% to 67% with larger d{sub s} due to higher elastic stress between the spacer and GaAs matrix. In addition, the dislocation density in the spacers with d{sub s} = 10 nm is lowest as a result of reduced residual strain. The photoluminescence peak energy from the QDs does not change monotonically with increasing d{sub s} due to the competing effects of decreased compressivemore » strain and weak electronic coupling of stacked QD layers. The QD structure with d{sub s} = 10 nm is demonstrated to have improved luminescence properties and higher carrier thermal stability.« less

Spacer-Directed Selective Assembly of Copper Square or Hexagon and Ring-Stacks or Coordination Nanotubes.

PubMed

Wu, Xialu; Ding, Nini; Zhang, Wenhua; Xue, Fei; Hor, T S Andy

2015-07-20

The use of simple self-assembly methods to direct or engineer porosity or channels of desirable functionality is a major challenge in the field of metal-organic frameworks. We herein report a series of frameworks by modifying square ring structure of [{Cu2(5-dmpy)2(L1)2(H2O)(MeOH)}2{ClO4}4]·4MeOH (1·4MeOH, 5-dmpy = 5,5'-dimethyl-2,2'-bipyridine, HL1 = 4-pyridinecarboxylic acid). Use of pyridyl carboxylates as directional spacers in bipyridyl chelated Cu(II) system led to the growth of square unit into other configurations, namely, square ring, square chain, and square tunnel. Another remarkable characteristic is that the novel use of two isomers of pyridinyl-acrylic acid directs selectively to two different extreme tubular forms-aligned stacking of discrete hexagonal rings and crack-free one-dimensional continuum polymers. This provides a unique example of two extreme forms of copper nanotubes from two isomeric spacers. All of the reactions are performed in a one-pot self-assembly process at room temperature, while the topological selectivity is exclusively determined by the skeletal characteristics of the spacers.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

PubMed Central

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-01-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach. PMID:27170543

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure.

PubMed

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-12

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

NASA Astrophysics Data System (ADS)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Identifying the perfect absorption of metamaterial absorbers

NASA Astrophysics Data System (ADS)

Duan, G.; Schalch, J.; Zhao, X.; Zhang, J.; Averitt, R. D.; Zhang, X.

2018-01-01

We present a detailed analysis of the conditions that result in unity absorption in metamaterial absorbers to guide the design and optimization of this important class of functional electromagnetic composites. Multilayer absorbers consisting of a metamaterial layer, dielectric spacer, and ground plane are specifically considered. Using interference theory, the dielectric spacer thickness and resonant frequency for unity absorption can be numerically determined from the functional dependence of the relative phase shift of the total reflection. Further, using transmission line theory in combination with interference theory we obtain analytical expressions for the unity absorption resonance frequency and corresponding spacer layer thickness in terms of the bare resonant frequency of the metamaterial layer and metallic and dielectric losses within the absorber structure. These simple expressions reveal a redshift of the unity absorption frequency with increasing loss that, in turn, necessitates an increase in the thickness of the dielectric spacer. The results of our analysis are experimentally confirmed by performing reflection-based terahertz time-domain spectroscopy on fabricated absorber structures covering a range of dielectric spacer thicknesses with careful control of the loss accomplished through water absorption in a semiporous polyimide dielectric spacer. Our findings can be widely applied to guide the design and optimization of the metamaterial absorbers and sensors.

Development of a new multi-layer insulation blanket with non-interlayer-contact spacer for space cryogenic mission

NASA Astrophysics Data System (ADS)

Miyakita, Takeshi; Hatakenaka, Ryuta; Sugita, Hiroyuki; Saitoh, Masanori; Hirai, Tomoyuki

2014-11-01

For conventional Multi-Layer Insulation (MLI) blankets, it is difficult to control the layer density and the thermal insulation performance degrades due to the increase in conductive heat leak through interlayer contacts. At low temperatures, the proportion of conductive heat transfer through MLI blankets is large compared to that of radiative heat transfer, hence the decline in thermal insulation performance is significant. A new type of MLI blanket using new spacers; the Non-Interlayer-Contact Spacer MLI (NICS MLI) has been developed. This new MLI blanket uses small discrete spacers and can exclude uncertain interlayer contact between films. It is made of polyetheretherketone (PEEK) making it suitable for space use. The cross-sectional area to length ratio of the spacer is 1.0 × 10-5 m with a 10 mm diameter and 4 mm height. The insulation performance is measured with a boil-off calorimeter. Because the NICS MLI blanket can exclude uncertain interlayer contact, the test results showed good agreement with estimations. Furthermore, the NICS MLI blanket shows significantly good insulation performance (effective emissivity is 0.0046 at ordinary temperature), particularly at low temperatures, due to the high thermal resistance of this spacer.

Study of Diffusion Bonding of 45 Steel through the Compacted Nickel Powder Layer

NASA Astrophysics Data System (ADS)

Zeer, G. M.; Zelenkova, E. G.; Temnykh, V. I.; Tokmin, A. M.; Shubin, A. A.; Koroleva, Yu. P.; Mikheev, A. A.

2018-02-01

The microstructure of the transition zone and powder spacer, the concentration distribution of chemical elements over the width of the diffusion-bonded joint, and microhardness of 45 steel-compacted Ni powder spacer-45 steel layered composites formed by diffusion bonding have been investigated. It has been shown that the relative spacer thickness χ < 0.06 is optimal for obtaining a high-quality joint has been formed under a compacting pressure of 500 MPa. The solid-state diffusion bonding is accompanied by sintering the nickel powder spacer and the formation of the transition zone between the spacer and steel. The transition zone consists of solid solution of nickel in the α-Fe phase and ordered solid solution of iron in nickel (FeNi3).

Quantum mechanism of nonlocal Gilbert damping in magnetic trilayers

NASA Astrophysics Data System (ADS)

Barati, Ehsan; Cinal, Marek

2015-06-01

A fully quantum-mechanical calculation of the Gilbert damping constant α in magnetic trilayers is done by employing the torque-correlation formula within a realistic tight-binding model. A remarkable enhancement of α in Co/NM1/NM2 trilayers is obtained due to adding the caps NM2=Pd, Pt, and it decays with the thickness of the spacers NM1=Cu, Ag, Au in agreement with experiment. Nonlocal origin of the Gilbert damping is visualized with its atomic layer contributions. It is shown that magnetization in Co is damped remotely by strong spin-orbit coupling in NM2 via quantum states with large amplitude in both Co and NM2.

Nano-oxide-layer insertion and specular effects in spin valves: Experiment and theory

NASA Astrophysics Data System (ADS)

Wang, L.; Qiu, J. J.; McMahon, W. J.; Li, K. B.; Wu, Y. H.

2004-06-01

We report a systematic study of NOL (nano-oxide-layer) insertion and specular effects on the giant magnetoresistance (GMR) of single, synthetic, and dual spin valves, using a semiclassical Boltzmann theory. It is confirmed that the GMR ratio is enhanced by NOL insertion inside the pinned layer or after the free layer. The enhancements are primarily due to the contribution of the majority carriers. The NOL insertions inside the inactive layers of spin valves such as the seed, under, and capping layers reduce the GMR ratio. Though introducing a NOL before or after the Cu spacer would, in principle, significantly suppress the GMR ratio due to the blocking effect or the average effect of different spin channels, large positive or negative (inverse) GMR is found by assuming spin-dependent NOL specular reflections. We have also demonstrated that specular reflection, even beyond a capping layer, may result in reduction of GMR. Upon appropriate NOL insertion, the amplitude of curve of GMR versus thickness of individual layer of spin valves may be generally enhanced, but the shape may change, depending on whether the distance of the NOL to the layer is small or large (distance effect). Finally, it is found that most results obtained for the single realistic spin valves are applicable to synthetic and dual spin valves.

Quenching Mo optical losses in CIGS solar cells by a point contacted dual-layer dielectric spacer: a 3-D optical study.

PubMed

Rezaei, Nasim; Isabella, Olindo; Vroon, Zeger; Zeman, Miro

2018-01-22

A 3-D optical modelling was calibrated to calculate the light absorption and the total reflection of fabricated CIGS solar cells. Absorption losses at molybdenum (Mo) / CIGS interface were explained in terms of plasmonic waves. To quench these losses, we assumed the insertion of a lossless dielectric spacer between Mo and CIGS, whose optical properties were varied. We show that such a spacer with low refractive index and proper thickness can significantly reduce absorption in Mo in the long wavelength regime and improve the device's rear reflectance, thus leading to enhanced light absorption in the CIGS layer. Therefore, we optimized a realistic two-layer MgF 2 / Al 2 O 3 dielectric spacer to exploit (i) the passivation properties of ultra-thin Al 2 O 3 on the CIGS side for potential high open-circuit voltage and (ii) the low refractive index of MgF 2 on the Mo side to reduce its optical losses. Combining our realistic spacer with optically-optimized point contacts increases the implied photocurrent density of a 750 nm-thick CIGS layer by 10% for the wavelengths between 700 and 1150 nm with respect to the reference cell. The elimination of plasmonic resonances in the new structure leads to a higher electric field magnitude at the bottom of CIGS layer and justifies the improved optical performance.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

Enhancing power density of strained In0.8Ga0.2As/AlAs resonant tunneling diode for terahertz radiation by optimizing emitter spacer layer thickness

NASA Astrophysics Data System (ADS)

Shi, Xiangyang; Wu, Yuanyuan; Wang, Ding; Su, Juan; Liu, Jie; Yang, Wenxian; Xiao, Meng; Tan, Wei; Lu, Shulong; Zhang, Jian

2017-12-01

We demonstrate both theoretically and experimentally that the power density of resonant tunneling diode (RTD) can be enhanced by optimizing emitter spacer layer thickness, in addition to reducing barrier thickness. Compared to the widely used epitaxial structure with ultrathin emitter spacer layer thickness, appropriate increasing the thickness will increase the voltage drop in accumulation region, leading to larger voltage widths of negative differential resistance region. By measuring J-V characteristics, the specific contact resistivity, and the self-capacitance, we theoretically analyze the maximum output power of the fabricated RTDs. It shows that the optimized In0.8Ga0.2As/AlAs RTD with 20 nm emitter spacer thickness and 5 μm2 mesa area theoretically possesses the capability to reach 3.1 mW at 300 GHz and 1.8 mW at 600 GHz.

[Cervical adaptation of complete cast crowns of various metal alloys, with and without die spacers].

PubMed

Stephano, C B; Roselino, R F; Roselino, R B; Campos, G M

1989-01-01

A metallic replica from a dental preparation for crown was used to make 8 class-IV stone dies. The wax patterns for the casting of the crowns were obtained in two conditions: a) from the stone die with no spacer; and b) from the stone die with an acrylic spacer. Thus, 64 metallic crowns were casted, using 4 different alloys: DURACAST (Cu-Al), NICROCAST (Ni-Cr) and DURABOND (Ni-Cr), and gold. The casted crowns were fitted in the metallic replica and measured as to the cervical discrepance of fitting. The results showed that the use of die spacers decreases the clinical discrepancies of fitting of the casted crowns (in a statistically significant level), no matter the metallic alloy employed.

Effect of spacer layer on the magnetization dynamics of permalloy/rare-earth/permalloy trilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Chen, E-mail: ronanluochen@gmail.com; Yin, Yuli; Zhang, Dong

2015-05-07

The permalloy/rare-earth/permalloy trilayers with different types (Gd and Nd) and thicknesses of spacer layer are investigated using frequency dependence of ferromagnetic resonance (FMR) measurements at room temperature, which shows different behaviors with different rare earth spacer layers. By fitting the frequency dependence of the FMR resonance field and linewidth, we find that the in-plane uniaxial anisotropy retains its value for all samples, the perpendicular anisotropy remains almost unchanged for different thickness of Gd layer but the values are tailored by different thicknesses of Nd layer. The Gilbert damping is almost unchanged with different thicknesses of Gd; however, the Gilbert dampingmore » is significantly enhanced from 8.4×10{sup −3} to 20.1×10{sup −3} with 6 nm of Nd and then flatten out when the Nd thickness rises above 6 nm.« less

Electrically injected visible vertical cavity surface emitting laser diodes

DOEpatents

Schneider, Richard P.; Lott, James A.

1994-01-01

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors.

Electrically injected visible vertical cavity surface emitting laser diodes

DOEpatents

Schneider, R.P.; Lott, J.A.

1994-09-27

Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors. 5 figs.

Nature of weak magnetism in SrTiO3/LaAlO3 multilayers.

PubMed

Salman, Z; Ofer, O; Radovic, M; Hao, H; Ben Shalom, M; Chow, K H; Dagan, Y; Hossain, M D; Levy, C D P; Macfarlane, W A; Morris, G M; Patthey, L; Pearson, M R; Saadaoui, H; Schmitt, T; Wang, D; Kiefl, R F

2012-12-21

We report the observation of weak magnetism in superlattices of LaAlO(3)/SrTiO(3) using β-detected nuclear magnetic resonance. The spin lattice relaxation rate of ^{8}Li in superlattices with a spacer layers of 8 and 6 unit cells of LaAlO(3) exhibits a strong peak near ~35 K, whereas no such peak is observed in a superlattice with spacer layer thickness of 3 unit cells. We attribute the observed temperature dependence to slowing down of weakly coupled electronic moments at the LaAlO(3)/SrTiO(3) interface. These results show that the magnetism at the interface depends strongly on the thickness of the spacer layer, and that a minimal thickness of ~4-6 unit cells is required for the appearance of magnetism. A simple model is used to determine that the observed relaxation is due to small fluctuating moments (~0.002μ(B)) in the two samples with a larger LaAlO(3) spacer thickness.

Two novel copper(II) complexes constructed from dicarboxylate ligands with different spacer lengths and 2-phenylimidazo[4,5- f]1,10-phenanthroline (PIP): Synthesis, structures and properties

NASA Astrophysics Data System (ADS)

Wang, X.-L.; Chen, Yongqiang; Liu, Guocheng; Lin, Hongyan; Zhang, Jinxia

2009-09-01

Two novel metal-organic coordination polymers [Cu(PIP)(bpea)(H 2O)]·H 2O ( 1) and [Cu(PIP)(1,4-bdc)] ( 2) have been obtained from hydrothermal reaction of copper(II) with the mixed ligands [biphenylethene-4,4'-dicarboxylic acid (bpea) for 1, benzene-1,4-dicarboxylic acid (1,4-H 2bdc) for 2, and 2-phenylimidazo[4,5- f]1,10-phenanthroline (PIP)]. Both complexes have been structurally characterized by elemental analyses, IR and single-crystal X-ray diffraction analyses. Structural analyses reveal that complex 1 possesses infinite one-dimensional zigzag chain, 2 exhibits a two-dimensional (4,4) network, both of which are extended into three-dimensional supramolecular network by weak interactions. The different structures of the title complexes illustrate the influence of the flexibility (the spacer length of carboxyl groups and the structural rigidity of the spacer) of organic dicarboxylate ligands on the formation of such coordination architectures. Moreover, the thermal properties and the voltammetric behavior of complexes 1 and 2 have been reported.

3D homometallic carboxylate ferrimagnet constructed from a manganese(II) succinate carboxylate layer motif pillared by isonicotinate spacers.

PubMed

Zeng, Ming-Hua; Wu, Mei-Chun; Liang, Hong; Zhou, Yan-Ling; Chen, Xiao-Ming; Ng, Seik-Weng

2007-09-03

A manganese succinate having a layer structure in which the layers are pillared by the isonicotinate spacers in a 3D architecture exhibits long-range ferrimagnetic order below 5.0 K, with the ferrimagnetism arising, for topological reasons, from the nature of the carboxylate binding modes. The compound is the first structurally authenticated example of a 3D ferrimagnet, featuring a homometallic topological ferrimagnetic sheet among metal carboxylates.

Optical absorption enhancement by inserting ZnO optical spacer in plasmonic organic solar cells

NASA Astrophysics Data System (ADS)

N'Konou, Kekeli; Torchio, Philippe

2018-01-01

Optical absorption enhancement (AE) using coupled optical spacer and plasmonic effects in standard and inverted organic solar cells (OSCs) are demonstrated using the finite-difference time-domain numerical method. The influence of an added zinc oxide (ZnO) optical spacer layer inserted below the active layer in standard architecture is first theoretically investigated while the influence of varying the ZnO cathodic buffer layer thickness in inverted design is studied on AE. Then, the embedding of a square periodic array of core-shell silver-silica nanospheres (Ag@SiO2 NSs) at different positions in standard and inverted OSCs is performed while AE and short-circuit current density (Jsc) are calculated. As a result of previous combined effects, the optimized standard plasmonic OSCs present 15% and 79.45% enhancement in J over the reference with and without ZnO optical spacer layer, respectively, and a 16% increase of AE when Ag@SiO2 NSs are placed on top of the PEDOT:PSS layer. Compared to the inverted OSC reference, the plasmonic OSCs present 26% and 27% enhancement in J and AE, respectively, when the Ag@SiO2 NSs are located on top of the ZnO layer. Furthermore, the spatial position of these NSs in such OSCs is a key parameter for increasing light absorption via enhanced electromagnetic field distribution.

Effect of MgO spacer and annealing on interface and magnetic properties of ion beam sputtered NiFe/Mg/MgO/CoFe layer structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhusan Singh, Braj; Chaudhary, Sujeet

2012-09-15

The effect of variation in the thickness of ion assisted ion beam sputtered MgO spacer layer deposited at oxygen ion assisted energy of 50 eV on the extent of magnetic coupling of NiFe and CoFe layers in Si/NiFe(10 nm)/Mg(1 nm)/MgO(2,4,6 nm)/CoFe(10 nm) sandwich structure is investigated. At MgO spacer layer thickness of 4 nm, the separate reversal of magnetizations of the two ferromagnetic layers is observed in the hystresis loop recorded along easy direction. This results in a 3.5 Oe wide plateau like region during magnetization reversal, which became 4.5 Oe at 6 nm thin MgO. At 2 nm thinmore » MgO, the absence of plateau during magnetization reversal region revealed ferromagnetic coupling between the two ferromagnetic layers, which is understood to arise due to the growth of very thin and low density (1.22 gm/cc) MgO spacer layer, indicating the presence of pinholes as revealed by x-ray reflectometry. After vaccum annealing (200 Degree-Sign C/1 h), the plateau region for 4 and 6 nm thin MgO case decreased to 1.5 Oe and 2.0 Oe, respectively, due to enhanced interface roughness/mixing. In addition, an enhancement of the in-plane magnetic anisotropy is also observed.« less

Comparison of the Results of MISSE 6 Atomic Oxygen Erosion Yields of Layered Kapton H Films with Monte Carlo Computational Predictions

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; Groh, Kim De; Kneubel, Christian A.

2014-01-01

A space experiment flown as part of the Materials International Space Station Experiment 6B (MISSE 6B) was designed to compare the atomic oxygen erosion yield (Ey) of layers of Kapton H polyimide with no spacers between layers with that of layers of Kapton H with spacers between layers. The results were compared to a solid Kapton H (DuPont, Wilmington, DE) sample. Monte Carlo computational modeling was performed to optimize atomic oxygen interaction parameter values to match the results of both the MISSE 6B multilayer experiment and the undercut erosion profile from a crack defect in an aluminized Kapton H sample flown on the Long Duration Exposure Facility (LDEF). The Monte Carlo modeling produced credible agreement with space results of increased Ey for all samples with spacers as well as predicting the space-observed enhancement in erosion near the edges of samples due to scattering from the beveled edges of the sample holders.

Anisotropic electrical conduction in ferromagnetic-antiferromagnetic-ferromagnetic oxide trilayers

NASA Astrophysics Data System (ADS)

Padhan, P.; Prellier, W.

2007-07-01

An antiferromagnetic layer of an insulator PrMnO3 , CaMnO3 , or Pr0.5Ca0.5MnO3 has been sandwiched between two layers of ferromagnetic SrRuO3 on (001)-oriented SrTiO3 and LaAlO3 substrates using the pulsed laser deposition technique. Magnetotransport measurements reveal a change of anisotropy in the case of trilayers having a Pr0.5Ca0.5MnO3 or a CaMnO3 spacer layer as compared to that of 20unit cells thick film of SrRuO3 , while in the case of PrMnO3 spacer layer, the change of anisotropy is negligible. In addition, two switching magnetic fields are observed with the trilayer made of PrMnO3 spacer layer in the field-dependent anisotropic magnetoresistance. The results are discussed using the concept of spin-orbit coupling and spin mixing conduction process at the interfaces.

Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, Kyo-Suk; Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701; Shim, Tae-Hun

We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However,more » the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.« less

Optical modulator including grapene

DOEpatents

Liu, Ming; Yin, Xiaobo; Zhang, Xiang

2016-06-07

The present invention provides for a one or more layer graphene optical modulator. In a first exemplary embodiment the optical modulator includes an optical waveguide, a nanoscale oxide spacer adjacent to a working region of the waveguide, and a monolayer graphene sheet adjacent to the spacer. In a second exemplary embodiment, the optical modulator includes at least one pair of active media, where the pair includes an oxide spacer, a first monolayer graphene sheet adjacent to a first side of the spacer, and a second monolayer graphene sheet adjacent to a second side of the spacer, and at least one optical waveguide adjacent to the pair.

Emission dynamics of hybrid plasmonic gold/organic GaN nanorods

NASA Astrophysics Data System (ADS)

Mohammadi, F.; Schmitzer, H.; Kunert, G.; Hommel, D.; Ge, J.; Duscher, G.; Langbein, W.; Wagner, H. P.

2017-12-01

We studied the emission of bare and aluminum quinoline (Alq3)/gold coated wurtzite GaN nanorods by temperature- and intensity-dependent time-integrated and time-resolved photoluminescence (PL). The GaN nanorods of ˜1.5 μm length and ˜250 nm diameter were grown by plasma-assisted molecular beam epitaxy. Gold/Alq3 coated GaN nanorods were synthesized by organic molecular beam deposition. The near band-edge and donor-acceptor pair luminescence was investigated in bare GaN nanorods and compared with multilevel model calculations providing the dynamical parameters for electron-hole pairs, excitons, impurity bound excitons, donors and acceptors. Subsequently, the influence of a 10 nm gold coating without and with an Alq3 spacer layer was studied and the experimental results were analyzed with the multilevel model. Without a spacer layer, a significant PL quenching and lifetime reduction of the near band-edge emission is found. The behavior is attributed to surface band-bending and Förster energy transfer from excitons to surface plasmons in the gold layer. Inserting a 5 nm Alq3 spacer layer reduces the PL quenching and lifetime reduction which is consistent with a reduced band-bending and Förster energy transfer. Increasing the spacer layer to 30 nm results in lifetimes which are similar to uncoated structures, showing a significantly decreased influence of the gold coating on the excitonic dynamics.

Emission dynamics of hybrid plasmonic gold/organic GaN nanorods.

PubMed

Mohammadi, F; Schmitzer, H; Kunert, G; Hommel, D; Ge, J; Duscher, G; Langbein, W; Wagner, H P

2017-12-15

We studied the emission of bare and aluminum quinoline (Alq 3 )/gold coated wurtzite GaN nanorods by temperature- and intensity-dependent time-integrated and time-resolved photoluminescence (PL). The GaN nanorods of ∼1.5 μm length and ∼250 nm diameter were grown by plasma-assisted molecular beam epitaxy. Gold/Alq 3 coated GaN nanorods were synthesized by organic molecular beam deposition. The near band-edge and donor-acceptor pair luminescence was investigated in bare GaN nanorods and compared with multilevel model calculations providing the dynamical parameters for electron-hole pairs, excitons, impurity bound excitons, donors and acceptors. Subsequently, the influence of a 10 nm gold coating without and with an Alq 3 spacer layer was studied and the experimental results were analyzed with the multilevel model. Without a spacer layer, a significant PL quenching and lifetime reduction of the near band-edge emission is found. The behavior is attributed to surface band-bending and Förster energy transfer from excitons to surface plasmons in the gold layer. Inserting a 5 nm Alq 3 spacer layer reduces the PL quenching and lifetime reduction which is consistent with a reduced band-bending and Förster energy transfer. Increasing the spacer layer to 30 nm results in lifetimes which are similar to uncoated structures, showing a significantly decreased influence of the gold coating on the excitonic dynamics.

Three 3D hybrid networks based on octamolybdates and different Cu{sup I}/Cu{sup II}-bis(triazole) motifs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Chun-Jing; Pang, Hai-Jun; Tang, Qun

2010-12-15

Three 3D compounds based on octamolybdate clusters and various Cu{sup I}/Cu{sup II}-bis(triazole) motifs, [Cu{sup I}{sub 2}btb][{beta}-Mo{sub 8}O{sub 26}]{sub 0.5} (1), [Cu{sup I}{sub 2}btpe][{beta}-Mo{sub 8}O{sub 26}]{sub 0.5} (2), and [Cu{sup II}(btpe){sub 2}][{beta}-Mo{sub 8}O{sub 26}]{sub 0.5} (3) [btb=1,4-bis(1,2,4-triazol-1-yl)butane, btpe=1,5-bis(1,2,4-triazol-1-yl)pentane], were isolated via tuning flexible ligand spacer length and metal coordination preferences. In 1, the copper(I)-btb motif is a one-dimensional (1D) chain which is further linked by hexadentate {beta}-[Mo{sub 8}O{sub 26}]{sup 4-} clusters via coordinating to Cu{sup I} cations giving a 3D structure. In 2, the copper(I)-btpe motif exhibits a 'stairs'-like [Cu{sup I}{sub 2}btpe]{sup 2+} sheet, and the tetradentate {beta}-[Mo{sub 8}O{sub 26}]{sup 4-}more » clusters interact with two neighboring [Cu{sup I}{sub 2}btpe]{sup 2+} sheets constructing a 3D framework. In 3, the copper(II)-btpe motif possesses a novel (2D{yields}3D) interdigitated structure, which is further connected by the tetradentate {beta}-[Mo{sub 8}O{sub 26}]{sup 4-} clusters forming a 3D framework. The thermal stability and luminescent properties of 1-3 are investigated in the solid state. -- Graphical abstract: Three 3D compounds based on {beta}-[Mo{sub 8}O{sub 26}]{sup 4-} clusters with different Cu{sup I}/Cu{sup II}-bis(triazole) motifs were synthesized by regularly tuning flexible ligand spacer length and metal coordination preferences. Display Omitted« less

Oliver E. Buckley Condensed Matter Prize Lecture: Transfer of spin momentum between magnets: its genesis and prospect

NASA Astrophysics Data System (ADS)

Slonczewski, John

2013-03-01

Consider two nanoscopic monodomain magnets connected by a spacer that is composed of a non-magnetic metal or a tunnel barrier. Any externally applied electric current flowing through these three layers contributes tiny pseudo-torques to both magnetic moments (J . S . 1989). Such a weak spin-transfer torque (STT) may counteract and overcome a comparably small torque caused by viscous dissipation (L. Berger1996; J . S . 1996). Any initial motion (e. g. excited by ambient temperature) of one moment (or both), may grow in amplitude and culminate in steady precession or a transient switch to a new direction of static equilibrium. In a memory element, the STT effect writes 0 or 1 in a magnetic-tunnel junction. Indeed, world-wide developments of memory arrays and radio-frequency oscillators utilizing current-driven STT today enjoy a nine-digit dollar commitment. But the fact that transfer of each half-unit of spin momentum h/4 π through a barrier requires the transfer of at least one unit of electric charge limits its efficiency. Arguably, STT should also arise from the flow of external heat, in either direction, between an insulating magnet, of ferrite or garnet (e. g. YIG) composition, and a metallic spacer (J . S . 2010). Whenever s-d exchange annihilates a hot magnon at the insulator/metal-spacer interface, it transfers one unit h/2 π of spin momentum to the spacer. Conduction electrons within the spacer will transport this spin momentum to the second magnet without requiring an electric current. Such a thermagnonicmethod, modestly powered by a Joule-effect heater, can substantially increase the efficiency of STT. Support for this prediction comes from (1) an estimate of the sd-exchange coefficient from data on spin relaxation in magnetically dilute (Cu,Ag,Au):Mn alloys; (2) a DFT computation (J. Xiao et al 2010); and (3) most persuasively, data from spin pumping driven across a YIG/Au interface by ferromagnetic resonance (B. Heinrich et al 2011; C. Burrowes et al 2012).

Dark current of organic heterostructure devices with insulating spacer layers

NASA Astrophysics Data System (ADS)

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; Saxena, Avadh; Smith, Darryl L.; Ruden, P. Paul

2015-03-01

The dark current density at fixed voltage bias in donor/acceptor organic planar heterostructure devices can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of an interfacial exciplex state. If the exciplex formation rate limits current flow, the insulating interface layer can increase dark current whereas, if the exciplex recombination rate limits current flow, the insulating interface layer decreases dark current. We present a device model to describe this behavior and illustrate it experimentally for various donor/acceptor systems, e.g. P3HT/LiF/C60.

Current–voltage characteristics of organic heterostructure devices with insulating spacer layers

DOE PAGES

Yin, Sun; Nie, Wanyi; Mohite, Aditya D.; ...

2015-05-14

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. As a result, we present a device model to describe this behavior, and wemore » discuss relevant experimental data.« less

New single-layer compression bandage system for chronic venous leg ulcers.

PubMed

Lee, Gillian; Rajendran, Subbiyan; Anand, Subhash

A new single-layer bandage system for the treatment of venous leg ulcers has been designed and developed at the University of Bolton. This three-dimensional (3D) knitted spacer fabric structure has been designed by making use of mathematical modelling and Laplace's law. The sustained graduated compression of the developed 3D knitted spacer bandages were tested and characterized, and compared with that of commercially available compression bandages. It was observed that the developed 3D single-layer bandage meets the ideal criteria stipulated for compression therapy. The laboratory results were verified by carrying out a pilot user study incorporating volunteers from different age groups. This article examines the insight into the design and development of the new 3D knitted spacer bandage, along with briefly discussing the issues of compression therapy systems intended for the treatment of venous leg ulcers.

Fabrication of nano-gap electrode arrays by the construction and selective chemical etching of nano-crosswire stacks

NASA Technical Reports Server (NTRS)

Prokopuk, Nicholas (Inventor); Son, Kyung-Ah (Inventor)

2008-01-01

Methods of fabricating nano-gap electrode structures in array configurations, and the structures so produced. The fabrication method involves depositing first and second pluralities of electrodes comprising nanowires using processes such as lithography, deposition of metals, lift-off processes, and chemical etching that can be performed using conventional processing tools applicable to electronic materials processing. The gap spacing in the nano-gap electrode array is defined by the thickness of a sacrificial spacer layer that is deposited between the first and second pluralities of electrodes. The sacrificial spacer layer is removed by etching, thereby leaving a structure in which the distance between pairs of electrodes is substantially equal to the thickness of the sacrificial spacer layer. Electrode arrays with gaps measured in units of nanometers are produced. In one embodiment, the first and second pluralities of electrodes are aligned in mutually orthogonal orientations.

A non-magnetic spacer layer effect on spin layers (7/2,3) in a bi-layer ferromagnetic dendrimer structure: Monte Carlo study

NASA Astrophysics Data System (ADS)

Jabar, A.; Tahiri, N.; Bahmad, L.; Benyoussef, A.

2016-11-01

A bi-layer system consisting of layers of spins (7/2, 3) in a ferromagnetic dendrimer structure, separated by a non-magnetic spacer, is studied by Monte Carlo simulations. The effect of the RKKY interactions is investigated and discussed for such system. It is shown that the magnetic properties in the two magnetic layers depend strongly on the thickness of the magnetic and non-magnetic layers. The total magnetizations and susceptibilities are studied as a function of the reduced temperature. The effect of the reduced exchange interactions as well as the reduced crystal field is outlined. On other hand, the critical temperature is discussed as a function of the magnetic layer values. To complete this study we presented and discussed the magnetic hysteresis cycles.

Optimum inhomogeneity of local lattice distortions in La2CuO4+y

PubMed Central

Poccia, Nicola; Ricci, Alessandro; Campi, Gaetano; Fratini, Michela; Puri, Alessandro; Gioacchino, Daniele Di; Marcelli, Augusto; Reynolds, Michael; Burghammer, Manfred; Saini, Naurang Lal; Aeppli, Gabriel; Bianconi, Antonio

2012-01-01

Electronic functionalities in materials from silicon to transition metal oxides are, to a large extent, controlled by defects and their relative arrangement. Outstanding examples are the oxides of copper, where defect order is correlated with their high superconducting transition temperatures. The oxygen defect order can be highly inhomogeneous, even in optimal superconducting samples, which raises the question of the nature of the sample regions where the order does not exist but which nonetheless form the “glue” binding the ordered regions together. Here we use scanning X-ray microdiffraction (with a beam 300 nm in diameter) to show that for La2CuO4+y, the glue regions contain incommensurate modulated local lattice distortions, whose spatial extent is most pronounced for the best superconducting samples. For an underdoped single crystal with mobile oxygen interstitials in the spacer La2O2+y layers intercalated between the CuO2 layers, the incommensurate modulated local lattice distortions form droplets anticorrelated with the ordered oxygen interstitials, and whose spatial extent is most pronounced for the best superconducting samples. In this simplest of high temperature superconductors, there are therefore not one, but two networks of ordered defects which can be tuned to achieve optimal superconductivity. For a given stoichiometry, the highest transition temperature is obtained when both the ordered oxygen and lattice defects form fractal patterns, as opposed to appearing in isolated spots. We speculate that the relationship between material complexity and superconducting transition temperature Tc is actually underpinned by a fundamental relation between Tc and the distribution of ordered defect networks supported by the materials. PMID:22961255

Asymmetric underlap spacer layer enabled nanoscale double gate MOSFETs for design of ultra-wideband cascode amplifiers

NASA Astrophysics Data System (ADS)

Roy, Debapriya; Biswas, Abhijit

2017-10-01

Using extensive numerical analysis we investigate effects of asymmetric sidewall spacers on various device parameters of 20-nm double gate MOSFETs associated with analog/RF applications. Our studies show that the device with underlap drain-side spacer length LED of 10 nm and source-side spacer length LES of 5 nm shows improvement in terms of the peak value of transconductance efficiency, voltage gain Av, unity-gain cut-off frequency fT and maximum frequency of oscillations fMAX by 8.6%, 51.7%, 5% and 10.3%, respectively compared to the symmetric 5 nm underlap spacer device with HfO2 spacer of dielectric constant k = 22. Additionally, a higher spacer dielectric constant increases the peak Av while decreasing both peak fT and fMAX. The detailed physical insight is exploited to design a cascode amplifier which yields an ultra-wide gain bandwidth of 2.48 THz at LED = 10 nm with a SiO2 spacer.

Magnetic interactions in anisotropic Nd-Dy-Fe-Co-B/α-Fe multilayer magnets

NASA Astrophysics Data System (ADS)

Dai, Z. M.; Liu, W.; Zhao, X. T.; Han, Z.; Kim, D.; Choi, C. J.; Zhang, Z. D.

2016-10-01

The magnetic properties and the possible interaction mechanisms of anisotropic soft- and hard-magnetic multilayers have been investigated by altering the thickness of different kinds of spacer layers. The metal Ta and the insulating oxides MgO, Cr2O3 have been chosen as spacer layers to investigate the characteristics of the interactions between soft- and hard-magnetic layers in the anisotropic Nd-Dy-Fe-Co-B/α-Fe multilayer system. The dipolar and exchange interaction between hard and soft phases are evaluated with the help of the first order reversal curve method. The onset of the nucleation field and the magnetization reversal by domain wall movement are also evident from the first-order-reversal-curve measurements. Reversible/irreversible distributions reveal the natures of the soft- and hard-magnetic components. Incoherent switching fields are observed and the calculations show the semiquantitative contributions of hard and soft components to the system. An antiferromagnetic spacer layer will weaken the interaction between ferromagnetic layers and the effective interaction length decreases. As a consequence, the dipolar magnetostatic interaction may play an important role in the long-range interaction in anisotropic multilayer magnets.

Study of plasmonics in hybrids made from a quantum emitter and double metallic nanoshell dimer

NASA Astrophysics Data System (ADS)

Guo, Jiaohan; Black, Kevin; Hu, Jiawen; Singh, Mahi

2018-05-01

We developed a theory for the fluorescence (FL) for quantum emitter and double metallic nanoshell dimer hybrids using the density matrix method. The dimer is made from two identical double metallic nanoshells, which are made of a dielectric core, a gold metallic shell and a dielectric spacer layer. The quantum emitters are deposited on the surface of the spacer layers of the dimers due to the electrostatic absorptions. We consider that dimer hybrids are surrounded by biological cells. This can be achieved by injecting them into human or animal cells. The surface plasmon polaritons (SPP) are calculated for the dimer using Maxwell’s equations in the static wave approximation. The calculated SPP energy agrees with experimental data from Zhai et al (2017 Plasmonics 12 263) for the dimer made from a silica core, a gold metallic nanoshell and a silica spacer layer. We have also obtained an analytical expression of the FL using the density matrix method. We compare our theory with FL experimental data from Zhai et al (2017 Plasmonics 12 263) where the FL spectrum was measured by varying the thickness of the spacer layer from 9 nm to 40 nm. A good agreement between theory and experiment is found. We have shown that the enhancement of the FL increases as the thickness of the spacer layer decreases. We have also found that the enhancement of the FL increases as the distance between the double metallic nanoshells in the dimer decreases. These are interesting findings which are consistent with the experiments of Zhai et al (2017 Plasmonics 12 263) and can be used to control the FL enhancement in the FL-based biomedical imaging and cancer treatment. These interesting findings may also be useful in the fabrication of nanosensors and nanoswitches for applications in medicine.

Modes of interaction between nanostructured metal and a conducting mirror as a function of separation and incident polarization

NASA Astrophysics Data System (ADS)

Bonnie, F.; Arnold, M. D.; Smith, G. B.; Gentle, A. R.

2013-09-01

The optical resonances that occur in nanostructured metal layers are modulated in thin film stacks if the nanostructured layer is separated from a reflecting conducting layer by various thicknesses of thin dielectric. We have measured and modeled the optical response of interacting silver layers, with alumina spacer thickness ranging from a few nm to 50 nm, for s- and p-polarized incident light, and a range of incident angles. Standard thin film models, including standard effective medium models for the nanostructured layer, will break down for spacer thickness below a critical threshold. For example, with polarisation in the film plane and some nano-islands, it may occur at around 10 nm depending on spacer refractive index. Of particular interest here are novel effects observed with the onset of percolation in the nanolayer. Hot spot effects can be modified by nearby mirrors. Other modes to consider include (a) a two-particle mode involving a particle and its mirror image (b) A Fano resonance from hybridisation of localized and de-localised plasmon modes (c) a Babinet's core-(partial) shell particle with metal core-dielectric shell in metal (d) spacing dependent phase modulation (e) the impact of field gradients induced by the mirror at the nano-layer.

Glass for Solid State Devices

NASA Technical Reports Server (NTRS)

Bailey, R. F.

1982-01-01

Glass film has low intrinsic compressive stress for isolating active layers of magnetic-bubble and other solid-state devices. Solid-state device structure incorporates low-stress glasses as barrier and spacer layers. Glass layers mechanically isolate substrate, conductor, and nickel/iron layers.

Measurements and sensitivities of LWR in poly spacers

NASA Astrophysics Data System (ADS)

Ayal, Guy; Shauly, Eitan; Levi, Shimon; Siany, Amit; Adan, Ofer; Shacham-Diamand, Yosi

2010-03-01

LER and LWR have long been considered a primary issue in process development and monitoring. Development of a low power process flavors emphasizes the effect of LER, LWR on different aspects of the device. Gate level performance, particularly leakage current at the front end of line, resistance and reliability in the back-end layers. Traditionally as can be seen in many publications, for the front end of line the focus is mainly on Poly and Active area layers. Poly spacers contribution to the gate leakage, for example, is rarely discussed. Following our research done on sources of gate leakage, we found leakage current (Ioff) in some processes to be highly sensitive to changes in the width of the Poly spacers - even more strongly to the actual Poly gate CDs. Therefore we decided to measure Poly spacers LWR, its correlation to the LWR in the poly, and its sensitivity to changes in layout and OPC. In our last year publication, we defined the terms LLER (Local Line Edge Roughness) and LLWR (Local Line Width Roughness). The local roughness is measured as the 3-sigma value of the line edge/width in a 5-nm segment around the measurement point. We will use these terms in this paper to evaluate the Poly roughness impact on Poly spacer's roughness. A dedicated test chip was designed for the experiments, having various transistors layout configurations with different densities to cover the all range of process design rules. Applied Materials LER and LWR innovative algorithms were used to measure and characterize the spacer roughness relative to the distance from the active edges and from other spaces. To accurately measure all structures in a reasonable time, the recipes were automatically generated from CAD. On silicon, after poly spacers generation, the transistors no longer resemble the Poly layer CAD layout, their morphology is different compared with Photo/Etch traditional structures , and dimensions vary significantly. In this paper we present metrology and characterization of poly spacer LLWR and LLER compared to that of the poly gate in various transistor shapes, showing that the relation between them depends on the transistor architecture (final layout, including OPC). We will show how the spacer deposition may reduce, keep or even enlarge the roughness measured on Poly, depending on transistor layout , but surprisingly, not dependent on proximity effects.

Gas sensor

DOEpatents

Schmid, Andreas K.; Mascaraque, Arantzazu; Santos, Benito; de la Figuera, Juan

2014-09-09

A gas sensor is described which incorporates a sensor stack comprising a first film layer of a ferromagnetic material, a spacer layer, and a second film layer of the ferromagnetic material. The first film layer is fabricated so that it exhibits a dependence of its magnetic anisotropy direction on the presence of a gas, That is, the orientation of the easy axis of magnetization will flip from out-of-plane to in-plane when the gas to be detected is present in sufficient concentration. By monitoring the change in resistance of the sensor stack when the orientation of the first layer's magnetization changes, and correlating that change with temperature one can determine both the identity and relative concentration of the detected gas. In one embodiment the stack sensor comprises a top ferromagnetic layer two mono layers thick of cobalt deposited upon a spacer layer of ruthenium, which in turn has a second layer of cobalt disposed on its other side, this second cobalt layer in contact with a programmable heater chip.

Magnetotransport properties of spin-valve structures with Mg spacer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinez-Boubeta, C., E-mail: cboubeta@gmail.com; Ferrante, Y.; Graduate School of Excellence, Materials Science in Mainz, 55128 Mainz

2015-01-19

A theoretical prediction by Wang et al. [Phys. Rev. B 82, 054405 (2010)] suggests the preferential transmission of majority-spin states with Δ{sub 1} symmetry across a magnesium interlayer in Fe/Mg/MgO/Fe based magnetic tunnel junctions. Here, we report experiments to probe this question in CoFe/Mg/CoFe structures. We find that the strength of the interlayer coupling decays exponentially with increasing the spacer thickness, however, a non-monotonic variation of the magnetoresistance as a function of the Mg layer is observed. These data may help revisit the role of the insertion of a Mg interface layer in MgO-based devices.

Surface plasmon resonance in electrodynamically coupled Au NPs monolayer/dielectric spacer/Al film nanostructure: tuning by variation of spacer thickness

NASA Astrophysics Data System (ADS)

Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Liakhov, Yuriy F.; Tomchuk, Anastasiya V.; Haftel, Michael; Pinchuk, Anatoliy O.

2017-10-01

Effects of plasmonic coupling between metal nanoparticles and thin metal films separated by thin dielectric film-spacers have been studied by means of light extinction in three-layer planar Au NPs monolayer/dielectric (shellac) film/Al film nanostructure. The influence of coupling on the spectral characteristics of the Au NPs SPR extinction peak has been analyzed with spacer thickness, varied from 3 to 200 nm. The main observed features are a strong red shift (160 nm), and non-monotonical behavior of the magnitude and width of Au NPs SPR, as the spacer thickness decreased. The appearance of an intensive gap mode peak was observed at a spacer thickness smaller than approximately 30 nm, caused by the hybridization of the Au NPs SPR mode and gap mode in the presence of the Al film. Additionally, the appreciable enhancement (5.6 times) of light extinction by the Au NPs monolayer in the presence of Al film has been observed. A certain value of dielectric spacer thickness (70 nm) exists at which such enhancement is maximal.

Spintronics with metals: Current perpendicular-to-the-plane magneto-transport studies

NASA Astrophysics Data System (ADS)

Sharma, Amit

In this thesis, we present studies to produce new information about three topics: current perpendicular to the plane magnetoresistance (CPP-MR), spin transfer torque (STT), and antiferromagnetic spintronics. Large values of CPP-MR interface parameters---specific interface resistance (Area times resistance), 2AR*, and scattering asymmetry, gamma---are desirable for the use of CPP-MR in devices. Stimulated by a nanopillar study by the Cornell Group, we first discovered that Py/Al had an unusually large 2AR*, but a small gamma. In the hope of finding metal pairs with large values of both the interface parameters, the Py/Al studies led us to study the following interfaces: (a) F/Al with F: Py (= Ni84Fe16). Co, Fe, Co91Fe9, and (b) F/N: Py/Pd, Fe/V, Fe/Nb and Co/Pt. None of the metal pairs looks better for CPP-MR devices. The Cornell group also found that bracketing Al with thin Cu in Py/Al/Py nanopillars, gave an MR similar to Py/Al/Py rather than to Py/Cu/Py. To try to understand this result, we studied the effect of Cu/Al/Cu spacers on ADeltaR = AR(AP) - AR(P) of Py exchange biased spin valves (EBSVs). Here AR(AP) and AR(P) are the specific resistances in the anti-parallel (AP) and parallel (P) configurations of the F layers. Intriguingly, fixing the Al thickness tAl = 10 nm and varying tCu has no effect on ADeltaR, but fixing tCu = 10 nm and varying t Al significantly affected ADeltaR. These unusual behaviors are probably due to strong Al and Cu intermixing, with probable formation of some fraction of ordered alloys. Recent calculations predicted that 2AR of Al/Ag interfaces would vary substantially with orientation and with alloying. The latter is a special potential problem, because Al and Ag interdiffuse at room temperature. To compare with the calculations, we determined 2AR of sputtered Al/Ag interfaces with (111) orientation. Our estimate agrees with calculations that assume 4 monolayers of interfacial disorder, consistent with modest intermixing. To aid in understanding the physics underlying spin transfer torque in F/N/F trilayers, we devised a simple test, where we change the transport properties of only the N-spacer from ballistic to diffusive. To try to minimize effects of systematic errors, we compare ratios of results for diffusive and ballistic transport with calculations. The ratios disagree with predictions of those models that were expected to be most, reliable. Recently, it was predicted that spintronics effects: magnetoresistance, and spin transfer torque induced magnetization switching, should be observable in systems where ferromagnets are replaced by antiferromagnets. We have done the first experiments to search for those predicted antiferromagnetic spintronics effects. We find effects of large current densities on exchange bias, but no clear evidence for antiferromagnetic giant magnetoresistance.

Study of interlayer coupling between FePt and FeCoB thin films through MgO spacer layer

NASA Astrophysics Data System (ADS)

Singh, Sadhana; Kumar, Dileep; Gupta, Mukul; Reddy, V. Raghvendra

2017-05-01

Interlayer exchange coupling between hard-FePt and soft-FeCoB magnetic layers has been studied with increasing thickness of insulator MgO spacer layer in FePt/MgO/FeCoB sandwiched structure. A series of the samples were prepared in identical condition using ion beam sputtering method and characterized for their magnetic and structural properties using magneto-optical Kerr effect (MOKE) and X-ray reflectivity measurements. The nature of coupling between FePt and FeCoB was found to be ferromagnetic which decreases exponentially with increasing thickness of MgO layer. At very low thickness of MgO layer, both layers were found strongly coupled thus exhibiting coherent magnetization reversal. At higher thickness, both layers were found decoupled and magnetization reversal occurred at different switching fields. Strong coupling at very low thickness is attributed to pin holes in MgO layer which lead to direct coupling whereas on increasing thickness, coupling may arise due to magneto-static interactions.

Spin currents and spin-orbit torques in ferromagnetic trilayers.

PubMed

Baek, Seung-Heon C; Amin, Vivek P; Oh, Young-Wan; Go, Gyungchoon; Lee, Seung-Jae; Lee, Geun-Hee; Kim, Kab-Jin; Stiles, M D; Park, Byong-Guk; Lee, Kyung-Jin

2018-06-01

Magnetic torques generated through spin-orbit coupling 1-8 promise energy-efficient spintronic devices. For applications, it is important that these torques switch films with perpendicular magnetizations without an external magnetic field 9-14 . One suggested approach 15 to enable such switching uses magnetic trilayers in which the torque on the top magnetic layer can be manipulated by changing the magnetization of the bottom layer. Spin currents generated in the bottom magnetic layer or its interfaces transit the spacer layer and exert a torque on the top magnetization. Here we demonstrate field-free switching in such structures and show that its dependence on the bottom-layer magnetization is not consistent with the anticipated bulk effects 15 . We describe a mechanism for spin-current generation 16,17 at the interface between the bottom layer and the spacer layer, which gives torques that are consistent with the measured magnetization dependence. This other-layer-generated spin-orbit torque is relevant to energy-efficient control of spintronic devices.

Plasmon enhanced fluorescence studies from aligned gold nanorod arrays modified with SiO{sub 2} spacer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damm, Signe; Fedele, Stefano; Rice, James H., E-mail: james.rice@ucd.ie

Here, we demonstrate that quasi self-standing Au nanorod arrays prepared with plasma polymerisation deposited SiO{sub 2} dielectric spacers support surface enhanced fluorescence (SEF) while maintaining high signal reproducibility. We show that it is possible to find a balance between enhanced radiative and non-radiative decay rates at which the fluorescent intensity is maximized. The SEF signal optimised with a 30 nm spacer layer thickness showed a 3.5-fold enhancement with a signal variance of <15% thereby keeping the integrity of the nanorod array. We also demonstrate the decreased importance of obtaining resonance conditions when localized surface plasmon resonance is positioned within the spectralmore » region of Au interband transitions. Procedures for further increasing the SEF enhancement factor are also discussed.« less

Structures of Cu surfaces developing in benzotriazole solutions: Effect of pH

NASA Astrophysics Data System (ADS)

Kondoh, Eiichi; Kawakami, Tatsuya; Watanabe, Mitsuhiro; Jin, Linhua; Hamada, Satomi; Shima, Shohei; Hiyama, Hirokuni

2017-07-01

The effect of pH on layer formation onto clean Cu surfaces in benzotriazole (BTA) aqueous solutions was studied by in situ spectroscopic ellipsometry. The effect of H2O2 addition was also investigated. Time changes in the ellipsometric parameters Ψ and Δ, which correspond to the structural changes of the layers on Cu, were discussed. In acidic solutions, a BTA or a Cu-BTA complex layer grows directly on Cu. The out-diffusion of Cu is suppressed at the Cu layer interface. When H2O2 was mixed, the Cu surface is eroded in acidic solutions. In alkaline solutions, the BTA layer grows on the oxidized Cu layer, or no growth occurs, depending on the composition of the solutions. In neutral solutions, the Cu-BTA complex layer forms on Cu, and the uncovered part is oxidized in the presence of H2O2.

64Cu-Labeled Trastuzumab Fab-PEG24-EGF Radioimmunoconjugates Bispecific for HER2 and EGFR: Pharmacokinetics, Biodistribution, and Tumor Imaging by PET in Comparison to Monospecific Agents.

PubMed

Kwon, Luke Yongkyu; Scollard, Deborah A; Reilly, Raymond M

2017-02-06

Heterodimerization of EGFR with HER2 coexpressed in breast cancer (BC) promotes tumor growth, and increased EGFR expression is associated with trastuzumab resistance. Our aim was to construct 64 Cu-labeled bispecific radioimmunoconjugates (bsRIC) composed of trastuzumab Fab, which binds HER2 linked through a polyethylene glycol (PEG 24 ) spacer to EGF, and to compare their pharmacokinetic, biodistribution, and tumor imaging characteristics by positron-emission tomography (PET). bsRICs were generated by linking maleimide modified trastuzumab Fab with thiolated EGF through a thioether bond. HER2 and EGFR binding were assessed in vitro in MDA-MB-231 (EGFR mod /HER2 low ), MDA-MB-468 (EGFR high /HER2 neg ), MDA-MB-231-H2N (EGFR mod /HER2 mod ), and SKOV3 (EGFR low /HER2 high ) cells by competition and saturation cell binding assays to estimate the dissociation constant (K d ). The elimination of the 64 Cu-NOTA-trastuzumab Fab-PEG 24 -EGF bsRICs from the blood of Balb/c mice was compared to monospecific 64 Cu-NOTA-trastuzumab Fab and 64 Cu-NOTA-EGF. MicroPET/CT imaging was performed in NOD/SCID mice bearing subcutaneous MDA-MB-468, MDA-MB-231/H2N, or SKOV3 human BC xenografts at 24 and 48 h postinjection (p.i.) of bsRICs. Tumor and normal tissue uptake were quantified by biodistribution studies and compared to monospecific agents. The binding of bsRICs to MDA-MB-231 cells was decreased to 24.5 ± 5.2% by excess EGF, while the binding of bsRICs to SKOV3 cells was decreased to 38.6 ± 5.4% by excess trastuzumab Fab, demonstrating specific binding to both EGFR and HER2. 64 Cu-labeled bsRICs incorporating the PEG 24 spacer were eliminated more slowly from the blood than 64 Cu-bsRICs without the PEG spacer and were cleared much more slowly than 64 Cu-NOTA-Fab or 64 Cu-NOTA-EGF. All three tumor xenografts were visualized by microPET/CT at 24 and 48 h p.i. of bsRICs. Biodistribution studies at 48 h p.i. in NOD/SCID mice with MDA-MB-231/H2N tumors demonstrated significantly greater tumor uptake of 64 Cu-NOTA-Fab-PEG 24 -EGF (4.9 ± 0.4%ID/g) than 64 Cu-NOTA-Fab (1.9 ± 0.3%ID/g; P < 0.0001) and 64 Cu-NOTA-EGF (0.7 ± 0.2%ID/g; P < 0.0001). Furthermore, preadministration of an excess of trastuzumab Fab or trastuzumab Fab-PEG 24 -EGF significantly decreased the tumor uptake of 64 Cu-NOTA-Fab-PEG 24 -EGF in SK-OV-3 and MDA-MB-468 xenografts by 4.4-fold (P = 0.0012) and 1.8-fold (P = 0.0031), respectively. 64 Cu-labeled bsRICs bound HER2 or EGFR and were taken up specifically in vivo in tumor xenografts expressing one or both receptors. The PEG 24 linker prolonged the blood residence time contributing to the higher tumor uptake of the bsRICs than monospecific agents.

Role of the antiferromagnetic pinning layer on spin wave properties in IrMn/NiFe based spin-valves

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gubbiotti, G., E-mail: gubbiotti@fisica.unipg.it; Tacchi, S.; Del Bianco, L.

2015-05-07

Brillouin light scattering (BLS) was exploited to study the spin wave properties of spin-valve (SV) type samples basically consisting of two 5 nm-thick NiFe layers (separated by a Cu spacer of 5 nm), differently biased through the interface exchange coupling with an antiferromagnetic IrMn layer. Three samples were investigated: a reference SV sample, without IrMn (reference); one sample with an IrMn underlayer (10 nm thick) coupled to the bottom NiFe film; one sample with IrMn underlayer and overlayer of different thickness (10 nm and 6 nm), coupled to the bottom and top NiFe film, respectively. The exchange coupling with the IrMn, causing the insurgence ofmore » the exchange bias effect, allowed the relative orientation of the NiFe magnetization vectors to be controlled by an external magnetic field, as assessed through hysteresis loop measurements by magneto-optic magnetometry. Thus, BLS spectra were acquired by sweeping the magnetic field so as to encompass both the parallel and antiparallel alignment of the NiFe layers. The BLS results, well reproduced by the presented theoretical model, clearly revealed the combined effects on the spin dynamic properties of the dipolar interaction between the two NiFe films and of the interface IrMn/NiFe exchange coupling.« less

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Pinholes and Nano-oxide Specular Layers in Spin Valves

NASA Astrophysics Data System (ADS)

Fry, R. A.; Egelhoff, W. F., Jr.; McMichael, R. D.; Chen, P. J.; Powell, C. J.; Beach, G.; Berkowitz, A. E.

2001-03-01

Recently, nano-oxide layers (NOL) in giant magnetoresistance (GMR) spin valves have attracted interest as a method of achieving increased GMR associated with specular reflection at Co/oxide interfaces. The NOL must be thin enough so that strong magnetic coupling across it exists; otherwise, the films separated by NOL could switch separately. We have investigated the structure NiO/2.5 nm Co/2.5 nm Cu/2 nm Co/NOL/2 nm Co/10 nm IrMn. The bottom Co is pinned by NiO more strongly than the top Co is pinned by IrMn; thus the top Co film can be switched to observe GMR loops. With no NOL, the GMR loop obtained by switching the 4 nm top Co film is shifted 300 Oe by the exchange bias of IrMn. Using CoO as a NOL, at thickness of 1 nm there is a sudden drop from 300 Oe to <10 Oe. It appears that pinhole coupling at CoO<1 nm forces the two Co films to switch together, but at CoO 1 nm the pinholes close up and the Co films switch separately. Such observations constitute a new approach to the study of pinholes, and we use it to investigate several oxides and metal spacer layers.

Syntheses, structures and luminescence of three copper(I) cyanide coordination polymers based on trigonal 1,3,5-tris(1H-imidazol-1-yl)benzene ligand

NASA Astrophysics Data System (ADS)

Shao, Min; Li, Ming-Xing; Lu, Li-Ruo; Zhang, Heng-Hua

2016-09-01

Three Cu(I)-cyanide coordination polymers based on trigonal 1,3,5-tris(1H-imidazol-1-yl)benzene (tib) ligand, namely [Cu3(CN)3(tib)]n (1), [Cu4(CN)4(tib)]n (2), and [Cu2(CN)2(tib)]n (3), have been prepared and characterized by elemental analysis, IR, PXRD, thermogravimetry and single-crystal X-ray diffraction analysis. Complex 1 displays a 3D metal-organic framework with nanosized pores. Complex 2 is a 3D coordination polymer assembled by three μ2-cyanides and a μ3-cyanide with a very short Cu(I)···Cu(I) metal bond(2.5206 Å). Complex 3 is a 2D coordination polymer constructing from 1D Cu(I)-cyanide zigzag chain and bidentate tib spacer. Three Cu(I) complexes are thermally stable up to 250-350 °C. Complexes 1-3 show similar orange emission band at 602 nm originating from LMCT mechanism.

Finite-size effects and magnetic exchange coupling in thin CoO layers

NASA Astrophysics Data System (ADS)

Ambrose, Thomas Francis

Finite size effects in CoO have been observed in CoO/SiOsb2 multilayers. The Neel temperatures of the CoO layers, as determined by dc susceptibility measurements, follow a finite-size scaling relation with a shift exponent lambda = 1.55 ± 0.05. This determined exponent is close to the theoretical value for finite size scaling in an Ising system. The value of the zero temperature correlation length has also been determined to be 18A, while antiferromagnetic ordering persists down to a CoO layer thickness of 10A. The properties of exchange biasing have been extensively studied in NiFe/CoO bilayers. The effects of the cooling field (Hsb{FC}), up to 50 kOe, on the resultant exchange field (Hsb{E}) and coercivity (Hsb{C}) have been examined. The value of Hsb{E} increases rapidly at low cooling fields (Hsb{FC} < 1kOe) and levels off for Hsb{FC} larger than 4 kOe. The value of Hsb{C} also depends upon Hsb{FC}, but less sensitively. The bilayer thickness also influences exchange biasing. We find that Hsb{E} varies inversely proprotional to both tsb{FM} and tsb{AF} where tsb{FM} and tsb{AF} are the ferromagnetic and antiferromagnetic layer thickness respectively. Because of the 1/tsb{AF}, the simple picture of interfacial coupling between ferromagnet and antiferromagnet spins appears to be inadequate. The assertion of long range coupling between ferromagnetic and antiferromagnetic layers has been verified by the observation of antiferromagnetic exchange coupling across spacer layers in NiFe/NM/CoO trilayers, where NM is a non-magnetic material. Exchange biasing has been observed in trilayers with metallic spacer layers up to 50A thick using Ag, Cu and Au, while no exchange field was observed for insulating spacer layers of any thickness using Alsb2Osb3, SiOsb2 and MgO. The temperature dependence of Hsb{E} and Hsb{C} and the effect of the deposition order have been studied in a series of bilayer (NiFe/CoO and CoO/NiFe) and trilayer (NiFe/CoO/NiFe) films. A profound difference in Hsb{E} was observed in samples with NiFe deposited on top of CoO compared to samples with CoO deposited on top of NiFe. When CoO is on top of NiFe Hsb{E} varies linearly with temperature, while for samples with NiFe on top of CoO Hsb{E} has a plateau followed by a rapid decrease. These distinct temperature dependences have been reproduced in NiFe/CoO/NiFe trilayers which contain both geometries. Structural analysis using Transmission Electron Microscopy indicate no apparent differences in the top and bottom interfaces. The angular dependence of the exchange coupling in a NiFe/CoO bilayer has been measured. Both Hsb{E} and Hsb{C} with unidirectional and uniaxial characteristics, respectively, are integral parts of the exchange coupling. The values of Hsb{E} can be expressed by a series of odd angle cosine terms, while the values of Hsb{C} can be expressed by a series of even angle cosine terms. Finally, exchange biasing has been used to "spin engineer" ferromagnetic layers in NiFe/CoO/NiFe trilayers. Four different spin structures have been observed. A phase diagram, for the four spin structures and the conditions with which each spin structure is obtained, has been determined. (Abstract shortened by UMI.)

Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

NASA Astrophysics Data System (ADS)

Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu

2018-01-01

We demonstrated low-sheet-resistance metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors using AlGaN spacers with excellent surface morphology. We systematically investigated the effects of AlGaN spacer growth conditions on surface morphology and electron mobility. We found that the surface morphology of InAlN barriers depends on that of AlGaN spacers. Ga desorption from AlGaN spacers was suppressed by increasing the trimethylaluminum (TMA) supply rate, resulting in the small surface roughnesses of InAlN barriers and AlGaN spacers. Moreover, we found that an increase in the NH3 supply rate also improved the surface morphologies of InAlN barriers and AlGaN spacers as long as the TMA supply rate was high enough to suppress the degradation of GaN channels. Finally, we realized a low sheet resistance of 185.5 Ω/sq with a high electron mobility of 1210 cm2 V-1 s-1 by improving the surface morphologies of AlGaN spacers and InAlN barriers.

CeO2-CuO/Cu2O/Cu monolithic catalysts with three-kind morphologies Cu2O layers for preferential CO oxidation

NASA Astrophysics Data System (ADS)

Jing, Guojuan; Zhang, Xuejiao; Zhang, Aiai; Li, Meng; Zeng, Shanghong; Xu, Changjin; Su, Haiquan

2018-03-01

The supports of copper slices with three-kind morphologies Cu2O layers were prepared by the hydrothermal method. The Cu2O layers are rod-like structure, three-dimensional reticular and porous morphology as well as flower-like morphology, respectively. The CeO2-CuO/Cu2O/Cu monolithic catalysts present porous and network structure or foam morphology after loading CeO2 and CuO. Cu and Ce elements are uniformly dispersed onto the support surface. It is found that the monolithic catalyst with flower-like Cu2O layer displays better low-temperature activity because of highly-dispersed CuO and high Olatt concentration. The monolithic catalysts with rod-like or reticular-morphology Cu2O layers present high-temperature activity due to larger CuO crystallite sizes and good synergistic effect at copper-ceria interfacial sites. The as-prepared CeO2-CuO/Cu2O/Cu monolithic catalysts show good performance in the CO-PROX reaction. The generation of Cu2O layers with three-kind morphologies is beneficial to the loading and dispersion of copper oxides and ceria.

Distance-dependent plasmon-enhanced fluorescence of upconversion nanoparticles using polyelectrolyte multilayers as tunable spacers.

PubMed

Feng, Ai Ling; You, Min Li; Tian, Limei; Singamaneni, Srikanth; Liu, Ming; Duan, Zhenfeng; Lu, Tian Jian; Xu, Feng; Lin, Min

2015-01-14

Lanthanide-doped upconversion nanoparticles (UCNPs) have attracted widespread interests in bioapplications due to their unique optical properties by converting near infrared excitation to visible emission. However, relatively low quantum yield prompts a need for developing methods for fluorescence enhancement. Plasmon nanostructures are known to efficiently enhance fluorescence of the surrounding fluorophores by acting as nanoantennae to focus electric field into nano-volume. Here, we reported a novel plasmon-enhanced fluorescence system in which the distance between UCNPs and nanoantennae (gold nanorods, AuNRs) was precisely tuned by using layer-by-layer assembled polyelectrolyte multilayers as spacers. By modulating the aspect ratio of AuNRs, localized surface plasmon resonance (LSPR) wavelength at 980 nm was obtained, matching the native excitation of UCNPs resulting in maximum enhancement of 22.6-fold with 8 nm spacer thickness. These findings provide a unique platform for exploring hybrid nanostructures composed of UCNPs and plasmonic nanostructures in bioimaging applications.

Investigation of spin-dependent transports and microstructure in NiMnSb-based magnetoresistive devices

NASA Astrophysics Data System (ADS)

Qu, Guanxiong; Cheng, P.-H.; Du, Ye; Sakuraba, Yuya; Kasai, Shinya; Hono, Kazuhiro

2017-11-01

We have fabricated fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices using C1b-half Heusler compound NiMnSb, the first candidate of the half-metallic material, as the electrode with a Ag spacer. The device shows magnetoresistance ratios of 25% at 4.2 K and 9.6% at 290 K, which are one of the highest values for the CPP-GMR with half-Heusler compounds. However, these values are much lower compared to those reported for CPP-GMR devices with L21-full Heusler compounds. Careful analysis of the microstructure using scanning transmission electron microscopy and energy dispersive spectroscopy through the upper NiMnSb/Ag interface indicates the heterogeneous formation of Ag-rich solid solution or the island growth of Ag on top of NiMnSb, which clarified a difficulty in evaluating an intrinsic spin-polarization in NiMnSb from CPP-GMR devices. Thus, to evaluate a spin-polarization of a NiMnSb thin film, we fabricated non-local spin valve (NLSV) devices using NiMnSb with Cu channel wires, which is free from the diffusion of Cu to NiMnSb because of no annealing proccess after deposition of Cu. Finally, intrinsic spin polarization of the NiMnSb single layer was extrapolated to be around 50% from NLSV, suggesting a difficulty in obtaining half-metallic nature in the NiMnSb epitaxial thin film.

Advanced detectors and signal processing

NASA Technical Reports Server (NTRS)

Greve, D. W.; Rasky, P. H. L.; Kryder, M. H.

1986-01-01

Continued progress is reported toward development of a silicon on garnet technology which would allow fabrication of advanced detection and signal processing circuits on bubble memories. The first integrated detectors and propagation patterns have been designed and incorporated on a new mask set. In addition, annealing studies on spacer layers are performed. Based on those studies, a new double layer spacer is proposed which should reduce contamination of the silicon originating in the substrate. Finally, the magnetic sensitivity of uncontaminated detectors from the last lot of wafers is measured. The measured sensitivity is lower than anticipated but still higher than present magnetoresistive detectors.

Preparation and properties of the multi-layer aerogel thermal insulation composites

NASA Astrophysics Data System (ADS)

Wang, Miao; Feng, Junzong; Jiang, Yonggang; Zhang, Zhongming; Feng, Jian

2018-03-01

Multi-layer insulation materials possess low radiation thermal conductivity, and excellent thermal insulation property in a vacuum environment. However, the spacers of the traditional multi-layer insulation materials are mostly loose fibers, which lead to more sensitive to the vacuum environmental of serviced. With the vacuum degree declining, gas phases thermal convection increase obviously, and the reflective screen will be severe oxidation, all of these make the thermal insulation property of traditional multi-layer insulation deteriorate, thus limits its application scope. In this paper, traditional multi-layer insulation material is combined with aerogel and obtain a new multi-layer aerogel thermal insulation composite, and the effects of the number, thickness and type of the reflective screens on the thermal insulation properties of the multi-layer composites are also studied. The result is that the thermal insulation property of the new type multi-layer aerogel composites is better than the pure aerogel composites and the traditional multi-layer insulation composites. When the 0.01 mm stainless steel foil as the reflective screen, and the aluminum silicate fiber and silica aerogel as the spacer layer, the layer density of composite with the best thermal insulation property is one layer per millimeter at 1000 °C.

Investigating the Modification of Spontaneous Emission using Layer-by-Layer Self-Assembly

NASA Astrophysics Data System (ADS)

Ashry, Islam Ahmed Ibrahim Youssef

The process of spontaneous emission can be dramatically modified by optical micro- and nanostructures. We studied the modification of fluorescence dynamics using a polymer spacer layer fabricated through layer-by-layer (LbL) self-assembly. The advantages of this method are numerous: The self-assembled spacers can possess exceptional smooth surface morphology; The thickness of the spacer can be controlled with nanometer accuracy; And depending on fabrication conditions, the spacer layer is stimuli responsive and its thickness can be dynamically tuned. This thesis contains three interlinked components. First, we vary LbL spacer layer thickness and explore the change in fluorescence lifetime induced by the modified photonic density of states (PDOS), i.e., Purcell effects. Our experimental results agree well with theoretical predictions based on a classical dipole model, which also yields consistent values for the fluorophores' intrinsic fluorescence lifetime and quantum yield near a dielectric as well as a plasmonic interface. Based on this observation, we further demonstrate that self-assembled fluorophores can be used to probe the modified PDOS near optical micro- and nano-structures. These results naturally lead to the second component of our research. In particularly, based on the PDOS-induced changes in fluorescent lifetime, we develop a non-contact method that can measure morphological changes with nanoscale resolution. Our method relies on quantitatively linking fluorophore position with PDOS, and is validated through direct comparison with ellipsometry and atomic force microscopy (AFM) measurements. To demonstrate the potential application of this method, we investigated the swelling/deswelling of LbL films induced by pH changes. Our results indicate significant difference between a LbL film composed of a single polymer monolayer and a LbL film with 3 monolayers. Such stimuli-responsive polymers can be used to construct active and tunable plasmonic nano-devices. As a proof-of-principle demonstration, we experimentally confirm that it is possible to utilize the swelling/deswelling behavior of stimuli-responsive films to dynamically control the separation between Au nanoparticles and Texas Red (TR) dyes. This result is based on the strong correlation of TR fluorescence lifetime and nanoparticles-TR separation. Finally, we investigate the impact of different lithography processes on the fluorescence properties of self-assembled fluorophores. We consider three methods: direct fluorophore patterning through ultraviolet (UV) ablation, focused ion beam (FIB) milling of self-assembled fluorophores, and self-assembly of fluorescent materials over plasmonic nano-patterns.

Structural properties and diffusion processes of the Cu 3Au (0 0 1) surface

NASA Astrophysics Data System (ADS)

Wang, Fang; Zhang, Jian-Min; Zhang, Yan; Ji, Vincent

2010-09-01

The surface relaxation and surface energy of both the mixed AuCu and pure Cu terminated Cu 3Au (0 0 1) surfaces are simulated and calculated by using the modified analytical embedded-atom method. We find that the mixed AuCu termination is energetically preferred over the pure Cu termination thereby the mono-vacancy diffusion is also investigated in the topmost few layers of the mixed AuCu terminated Cu 3Au (0 0 1) surface. In the mixed AuCu terminated surface the relaxed Au atoms are raised above Cu atoms for 0.13 Å in the topmost layer. All the surface atoms displace outwards, this effect occurs in the first three layers and changes the first two inter-layer spacing. For mono-vacancy migration in the first layer, the migration energies of Au and Cu mono-vacancy via two-type in-plane displace: the nearest neighbor jump (NNJ) and the second nearest neighbor jump (2NNJ), are calculated and the results show that the NNJ requires a much lower energy than 2NNJ. For the evolution of the energy requirements for successive nearest neighbor jumps (SNNJ) along three different paths: circularity, zigzag and beeline, we find that the circularity path is preferred over the other two paths due to its minimum energy barriers and final energies. In the second layer, the NN jumps in intra- and inter-layer of the Cu mono-vacancy are investigated. The calculated energy barriers and final energies show that the vacancy prefer jump up to a proximate Cu site. This replacement between the Cu vacancy in the second layer and Cu atom in the first layer is remunerative for the Au atoms enrichment in the topmost layer.

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

NASA Astrophysics Data System (ADS)

Yu, Hailiang; Lu, Cheng; Tieu, A. Kiet; Li, Huijun; Godbole, Ajit; Kong, Charlie

2018-06-01

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the 'thickness effect' during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate 'nanoporous' Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.

Cu/Cu2O nanocomposite films as a p-type modified layer for efficient perovskite solar cells.

PubMed

Chen, You-Jyun; Li, Ming-Hsien; Huang, Jung-Chun-Andrew; Chen, Peter

2018-05-16

Cu/Cu 2 O films grown by ion beam sputtering were used as p-type modified layers to improve the efficiency and stability of perovskite solar cells (PSCs) with an n-i-p heterojunction structure. The ratio of Cu to Cu 2 O in the films can be tuned by the oxygen flow ratio (O 2 /(O 2  + Ar)) during the sputtering of copper. Auger electron spectroscopy was performed to determine the elemental composition and chemical state of Cu in the films. Ultraviolet photoelectron spectroscopy and photoluminescence spectroscopy revealed that the valence band maximum of the p-type Cu/Cu 2 O matches well with the perovskite. The Cu/Cu 2 O film not only acts as a p-type modified layer but also plays the role of an electron blocking buffer layer. By introducing the p-type Cu/Cu 2 O films between the low-mobility hole transport material, spiro-OMeTAD, and the Ag electrode in the PSCs, the device durability and power conversion efficiency (PCE) were effectively improved as compared to the reference devices without the Cu/Cu 2 O interlayer. The enhanced PCE is mainly attributed to the high hole mobility of the p-type Cu/Cu 2 O film. Additionally, the Cu/Cu 2 O film serves as a protective layer against the penetration of humidity and Ag into the perovskite active layer.

First-principles spin-transfer torque in CuMnAs |GaP |CuMnAs junctions

NASA Astrophysics Data System (ADS)

Stamenova, Maria; Mohebbi, Razie; Seyed-Yazdi, Jamileh; Rungger, Ivan; Sanvito, Stefano

2017-02-01

We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronic device with potential high-frequency operation. By using state-of-the-art density functional theory combined with quantum transport, we show that the Néel vector of the electrodes can be manipulated by spin-transfer torque. This is staggered over the two different magnetic sublattices and can generate dynamics and switching. At the same time the different magnetization states of the junction can be read by standard tunneling magnetoresistance. Calculations are performed for CuMnAs |GaP |CuMnAs junctions with different surface terminations between the antiferromagnetic CuMnAs electrodes and the insulating GaP spacer. We find that the torque remains staggered regardless of the termination, while the magnetoresistance depends on the microscopic details of the interface.

Self-aligned quadruple patterning using spacer on spacer integration optimization for N5

NASA Astrophysics Data System (ADS)

Thibaut, Sophie; Raley, Angélique; Mohanty, Nihar; Kal, Subhadeep; Liu, Eric; Ko, Akiteru; O'Meara, David; Tapily, Kandabara; Biolsi, Peter

2017-04-01

To meet scaling requirements, the semiconductor industry has extended 193nm immersion lithography beyond its minimum pitch limitation using multiple patterning schemes such as self-aligned double patterning, self-aligned quadruple patterning and litho-etch / litho etch iterations. Those techniques have been declined in numerous options in the last few years. Spacer on spacer pitch splitting integration has been proven to show multiple advantages compared to conventional pitch splitting approach. Reducing the number of pattern transfer steps associated with sacrificial layers resulted in significant decrease of cost and an overall simplification of the double pitch split technique. While demonstrating attractive aspects, SAQP spacer on spacer flow brings challenges of its own. Namely, material set selections and etch chemistry development for adequate selectivities, mandrel shape and spacer shape engineering to improve edge placement error (EPE). In this paper we follow up and extend upon our previous learning and proceed into more details on the robustness of the integration in regards to final pattern transfer and full wafer critical dimension uniformity. Furthermore, since the number of intermediate steps is reduced, one will expect improved uniformity and pitch walking control. This assertion will be verified through a thorough pitch walking analysis.

Auto-organisation tridimensionnelle et proprietes optiques de multicouches de boites quantiques d'InAs/InP

NASA Astrophysics Data System (ADS)

Levesque, Annie

In this thesis, we study the growth of InAs(P)/InP(001) multilayers and the impact of their structure (spacer layer thickness, surface density, and island size) on the self-organization of the QDs and their optical properties. In particular, we have found a new strategy to obtain a large variety of island sizes and densities by perturbing the growth kinetics. We have also found a simple criterion to control the type of organization obtained. Finally, we have shown that the charge carriers are not transferred efficiently from the WL to the larger QDs and that the excitation of holes to the second heavy-hole levels is the dominant activated process leading to non-radiative recombination. We have shown that the island surface density has a major impact on the 3D organization type obtained, as opposed to the island size. Indeed, we have found that when increasing the H/D ratio between the thickness of the spacer layer H and the lateral distance D between the islands, we obtain a sequential appearance of the different self-organization regimes: vertical alignment, anti-alignment, and germination uncorrelated with the preceding layers. The transition between the aligned and the anti-aligned regimes occurs for a H/D value ranging between 0.3 and 0.4. This result can be generalized to a variety of material combinations (InGaAs/GaAs, Ge/Si and PbSe/PbEuTe). For thin spacer layers of less than 10 nm, the QDs are systematically vertically aligned in multilayers. Since the island size increases from one layer to the next, the strain in the InP barriers increases throughout the multilayer and their crystalline quality deteriorates. Under extreme conditions, we have even observed that some of the upper layers did not form or were incomplete, and that the number of layers that can form depends strongly on the nominal thickness of the spacer layer: one to two for H ≈ 3 nm, two to four for H ≈ 5 nm, and three to five for H ≈ 10 nm. Finally, we have studied the temperature dependence of photoluminescence (PL) spectra from multilayers of InAs/InP quantum dots with thin spacer layers, of nominal thickness ranging between 2.5 and 25 nm and emitting in the 0.6-0.8 eV spectral region. First, the emission from the QDs remains strong at 300 K: the integrated intensity is greater than 20% of the low temperature value. This is due to high energy confinement of charge carriers, which prevents their escape out of the QDs. We have observed that the temperature behavior of the sample luminescence differs as a function of the spectral range of emission. When the QDs emit at energies situated between 0.7 and 0.85 eV, the temperature induced redshift of the luminescence is close to that expected for a single QD. However, if a significant part of the spectrum lies at energies smaller than 0.7 eV, the temperature induced shift of the luminescence arising from a large ensemble of nanostructures is then smaller than that of an individual QD. This is due to the combination of two effects, that favor the emission from smaller islands: i) the charge carriers captured by the wetting layers are preferably transferred to the thinnest QDs, whose emission energy is higher than 0.7 eV; ii) the PL intensity coming from the thicker dots decreases rapidly with temperature, due to the proximity of the first excited heavy hole states, from which radiative recombination is forbidden with the electrons in the ground state. Both processes have been identified through the analysis of temperature-dependent PL measurements (between 10 and 300 K) using a rate-equation model that depends on QD size. The discrimination of the contributions to the spectra of each family of QDs of the same thickness is achieved through simple calculations of the carrier energy levels as a function of temperature (in the effective mass approximation). In addition, we have observed that increasing the number of periods in thin spacer multilayers (spacer thinner than ˜ 7 nm) changes the dynamics of charge carriers and leads to an increase of carrier transfers from the wetting layer to the QDs at low temperature. Finally, we have observed vertical coupling between islands of different planes only for spacer layers of nominal thickness smaller 3 nm. (Abstract shortened by UMI.)

A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD

NASA Astrophysics Data System (ADS)

Yamamoto, Yuji; Zaumseil, Peter; Capellini, Giovanni; Schubert, Markus Andreas; Hesse, Anne; Albani, Marco; Bergamaschini, Roberto; Montalenti, Francesco; Schroeder, Thomas; Tillack, Bernd

2017-12-01

Self-ordered three-dimensional body-centered tetragonal (BCT) SiGe nanodot structures are fabricated by depositing SiGe/Si superlattice layer stacks using reduced pressure chemical vapor deposition. For high enough Ge content in the island (>30%) and deposition temperature of the Si spacer layers (T > 700 °C), we observe the formation of an ordered array with islands arranged in staggered position in adjacent layers. The in plane periodicity of the islands can be selected by a suitable choice of the annealing temperature before the Si spacer layer growth and of the SiGe dot volume, while only a weak influence of the Ge concentration is observed. Phase-field simulations are used to clarify the driving force determining the observed BCT ordering, shedding light on the competition between heteroepitaxial strain and surface-energy minimization in the presence of a non-negligible surface roughness.

Investigation of magnetization dynamics damping in Ni80Fe20/Nd-Cu bilayer at room temperature

NASA Astrophysics Data System (ADS)

Fan, Wei; Fu, Qiang; Qian, Qian; Chen, Qian; Liu, Wanling; Zhou, Xiaochao; Yuan, Honglei; Yue, Jinjin; Huang, Zhaocong; Jiang, Sheng; Kou, Zhaoxia; Zhai, Ya

2018-05-01

Focusing on the Ni80Fe20 (Py)/Nd-Cu bilayers, the magnetization dynamic damping from spin pumping effect is investigated systematically by doping itinerant Cu in rear earth metal Nd. Various Ta/Py/Nd1-xCux/Ta/Si films with x = 0%, 16%, 38%, 46% and 58% are prepared by magnetron sputtering. For every content of Cu, the thickness of Nd-Cu layer is changed from 1 nm to 32 nm. The damping coefficient increases with increasing the thickness of Nd-Cu layer, which shows the trend of the spin pumping behavior. Also, with increasing Cu concentration in the Nd-Cu layer, the damping coefficient decreases, implying that the spin-orbit coupling in Nd-Cu layer is indeed cut down by high itinerant of Cu dopants. It is interesting that the spin diffusion length (λSD) in the Nd-Cu layer for different Cu dopants is not found to increase monotonously.

Preparation of Copper and Chromium Alloyed Layers on Pure Titanium by Plasma Surface Alloying Technology

NASA Astrophysics Data System (ADS)

He, Xiaojing; Li, Meng; Wang, Huizhen; Zhang, Xiangyu; Tang, Bin

2015-05-01

Cu-Cr alloyed layers with different Cu and Cr contents on pure titanium were obtained by means of plasma surface alloying technology. The microstructure, chemical composition and phase composition of Cu-Cr alloyed layers were analyzed by scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) and X-ray diffraction (XRD), respectively. The experimental results demonstrate that the alloyed layers are bonded strongly to pure titanium substrate and consist of unbound Ti, CuTi, Cu3Ti, CuTi3 and Cr2Ti. The thickness of Cu5Cr5 and Cu7Cr3 alloyed layer are about 18 μm and 28 μm, respectively. The antibacterial properties against gram-negative Escherichia coli (E.coli, ATCC10536) and gram-positive Staphylococcus aureus (S. aureus, ATCC6538) of untreated pure titanium and Cu-Cr alloyed specimen were investigated by live/dead fluorescence staining method. The study shows that Cu-Cr alloyed layers exhibit excellent antibacterial activities against both E.coli and S.aureus within 24 h, which may be attributed to the formation of Cu-containing phases.

Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaitsev, S. V., E-mail: szaitsev@issp.ac.ru; Akimov, I. A.; Langer, L.

2016-09-15

The coherent spin dynamics of carriers in the heterostructures that contain an InGaAs/GaAs quantum well (QW) and an Mn δ layer, which are separated by a narrow GaAs spacer 2–10 nm thick, is comprehensively studied by the magnetooptical Kerr effect method at a picosecond time resolution. The exchange interaction of photoexcited electrons in QW with the ferromagnetic Mn δ layer manifests itself in magnetic-field and temperature dependences of the Larmor precession frequency of electron spins and is found to be very weak (several microelectron volts). Two nonoscillating components related to holes exist apart from an electron contribution to the Kerrmore » signal of polarization plane rotation. At the initial stage, a fast relaxation process, which corresponds to the spin relaxation of free photoexcited holes, is detected in the structures with a wide spacer. The second component is caused by the further spin dephasing of energyrelaxed holes, which are localized at strong QW potential fluctuations in the structures under study. The decay of all contributions to the Kerr signal in time increases substantially when the spacer thickness decreases, which correlates with the enhancement of nonradiative recombination in QW.« less

In situ imaging of microstructure formation in electronic interconnections

PubMed Central

Salleh, M. A. A. Mohd; Gourlay, C. M.; Xian, J. W.; Belyakov, S. A.; Yasuda, H.; McDonald, S. D.; Nogita, K.

2017-01-01

The development of microstructure during melting, reactive wetting and solidification of solder pastes on Cu-plated printed circuit boards has been studied by synchrotron radiography. Using Sn-3.0Ag-0.5Cu/Cu and Sn-0.7Cu/Cu as examples, we show that the interfacial Cu6Sn5 layer is present within 0.05 s of wetting, and explore the kinetics of flux void formation at the interface between the liquid and the Cu6Sn5 layer. Quantification of the nucleation locations and anisotropic growth kinetics of primary Cu6Sn5 crystals reveals a competition between the nucleation of Cu6Sn5 in the liquid versus growth of Cu6Sn5 from the existing Cu6Sn5 layer. Direct imaging confirms that the β-Sn nucleates at/near the Cu6Sn5 layer in Sn-3.0Ag-0.5Cu/Cu joints. PMID:28079120

Role of Cu layer thickness on the magnetic anisotropy of pulsed electrodeposited Ni/Cu/Ni tri-layer

NASA Astrophysics Data System (ADS)

Dhanapal, K.; Prabhu, D.; Gopalan, R.; Narayanan, V.; Stephen, A.

2017-07-01

The Ni/Cu/Ni tri-layer film with different thickness of Cu layer was deposited using pulsed electrodeposition method. The XRD pattern of all the films show the formation of fcc structure of nickel and copper. This shows the orientated growth in the (2 2 0) plane of the layered films as calculated from the relative intensity ratio. The layer formation in the films were observed from cross sectional view using FE-SEM and confirms the decrease in Cu layer thickness with decreasing deposition time. The magnetic anisotropy behaviour was measured using VSM with two different orientations of layered film. This shows that increasing anisotropy energy with decreasing Cu layer thickness and a maximum of  -5.13  ×  104 J m-3 is observed for copper deposited for 1 min. From the K eff.t versus t plot, development of perpendicular magnetic anisotropy in the layered system is predicted below 0.38 µm copper layer thickness.

Ni Nanobuffer Layer Provides Light-Weight CNT/Cu Fibers with Superior Robustness, Conductivity, and Ampacity.

PubMed

Zou, Jingyun; Liu, Dandan; Zhao, Jingna; Hou, Ligan; Liu, Tong; Zhang, Xiaohua; Zhao, Yonghao; Zhu, Yuntian T; Li, Qingwen

2018-03-07

Carbon nanotube (CNT) fiber has not shown its advantage as next-generation light-weight conductor due to the large contact resistance between CNTs, as reflected by its low conductivity and ampacity. Coating CNT fiber with a metal layer like Cu has become an effective solution to this problem. However, the weak CNT-Cu interfacial bonding significantly limits the mechanical and electrical performances. Here, we report that a strong CNT-Cu interface can be formed by introducing a Ni nanobuffer layer before depositing the Cu layer. The Ni nanobuffer layer remarkably promotes the load and heat transfer efficiencies between the CNT fiber and Cu layer and improves the quality of the deposited Cu layer. As a result, the new composite fiber with a 2 μm thick Cu layer can exhibit a superhigh effective strength >800 MPa, electrical conductivity >2 × 10 7 S/m, and ampacity >1 × 10 5 A/cm 2 . The composite fiber can also sustain 10 000 times of bending and continuously work for 100 h at 90% ampacity.

Effects of Sn Layer Orientation on the Evolution of Cu/Sn Interfaces

NASA Astrophysics Data System (ADS)

Sun, Menglong; Zhao, Zhangjian; Hu, Fengtian; Hu, Anmin; Li, Ming; Ling, Huiqin; Hang, Tao

2018-03-01

The effects of Sn layer orientation on the evolution of Cu/Sn joint interfaces were investigated. Three Sn layers possessing (112), (321) and (420) orientations were electroplated on polycrystalline Cu substrates respectively. The orientations of Sn layer preserved during reflowing at 250 °C for 10 s. After aging at 150 °C for different time, the interfacial microstructures were observed from the cross-section and top-view. The alignment between the c-axis of Sn and Cu diffusion direction significantly sped up the Cu diffusion, leading to the thickest intermetallic compound layer formed in (112) joint. Two types of voids, namely, intracrystalline voids and grain islanding caused intercrystalline voids generated at Cu/Cu3Sn interfaces due to the different interdiffusion coefficients of Cu and Sn (112) oriented Sn/Cu joint produced many more voids than (321) joint, and no voids were detected in (420) joint. Therefore, to enhance the reliability of solder joints, using (420) oriented Sn as solder layer could be an efficient way.

Depth Profile of Induced Magnetic Polarization in Cu Layers of Co/Cu(111) Metallic Superlattices by Resonant X-ray Magnetic Scattering at the Cu K Absorption Edge

NASA Astrophysics Data System (ADS)

Uegaki, Shin; Yoshida, Akihiro; Hosoito, Nobuyoshi

2015-03-01

We investigated induced spin polarization of 4p conduction electrons in Cu layers of antiferromagnetically (AFM) and ferromagnetically (FM) coupled Co/Cu(111) metallic superlattices by resonant X-ray magnetic scattering at the Cu K absorption edge. Magnetic reflectivity profiles of the two superlattices were measured in the magnetic saturation state with circularly polarized synchrotron radiation X-rays at 8985 eV. Depth profiles of the resonant magnetic scattering length of Cu, which corresponds to the induced spin polarization of Cu, were evaluated in the two Co/Cu superlattices by analyzing the observed magnetic reflectivity profiles. We demonstrated that the spin polarization induced in the Cu layer was distributed around the Co/Cu interfaces with an attenuation length of several Å in both AFM and FM coupled superlattices. The uniform component, which exists in Au layers of Fe/Au(001) superlattices, was not found in the depth distribution of induced magnetic polarization in the Cu layers of Co/Cu(111) superlattices.

Materials science and integration bases for fabrication of (BaxSr1-x)TiO3 thin film capacitors with layered Cu-based electrodes

NASA Astrophysics Data System (ADS)

Fan, W.; Kabius, B.; Hiller, J. M.; Saha, S.; Carlisle, J. A.; Auciello, O.; Chang, R. P. H.; Ramesh, R.

2003-11-01

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1-x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400-600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates with TiAlOx, while the oxide layer at the TiAl/Cu interface is an Al2O3-rich layer. This double amorphous barrier layer structure effectively prevents oxygen penetration towards the underlying Cu and Ta layers. The TiAlOx interfacial layer, which has a relatively low dielectric constant compared with BST, reduced the total capacitance of the BST thin film capacitors. In addition, the layered electrode-oxide interface roughening observed during the growth of BST films at high temperature, due to copper grain growth, resulted in large dielectric loss on the fabricated BST capacitors. These problems were solved by growing the BST layer at 450 °C followed by a rapid thermal annealing at 700 °C. This process significantly reduced the thickness of the TiAlOx layer and interface roughness resulting in BST capacitors exhibiting properties suitable for the fabrication of high-performance high-frequency devices. In summary, relatively high dielectric constant (280), low dielectric loss (0.007), and low leakage current (<2×10-8 A/cm2 at 100 kV/cm) were achieved for BST thin film capacitors with Cu-based electrodes.

Distance-Dependent Plasmon-Enhanced Fluorescence of Upconversion Nanoparticles using Polyelectrolyte Multilayers as Tunable Spacers

PubMed Central

Feng, Ai Ling; You, Min Li; Tian, Limei; Singamaneni, Srikanth; Liu, Ming; Duan, Zhenfeng; Lu, Tian Jian; Xu, Feng; Lin, Min

2015-01-01

Lanthanide-doped upconversion nanoparticles (UCNPs) have attracted widespread interests in bioapplications due to their unique optical properties by converting near infrared excitation to visible emission. However, relatively low quantum yield prompts a need for developing methods for fluorescence enhancement. Plasmon nanostructures are known to efficiently enhance fluorescence of the surrounding fluorophores by acting as nanoantennae to focus electric field into nano-volume. Here, we reported a novel plasmon-enhanced fluorescence system in which the distance between UCNPs and nanoantennae (gold nanorods, AuNRs) was precisely tuned by using layer-by-layer assembled polyelectrolyte multilayers as spacers. By modulating the aspect ratio of AuNRs, localized surface plasmon resonance (LSPR) wavelength at 980 nm was obtained, matching the native excitation of UCNPs resulting in maximum enhancement of 22.6-fold with 8 nm spacer thickness. These findings provide a unique platform for exploring hybrid nanostructures composed of UCNPs and plasmonic nanostructures in bioimaging applications. PMID:25586238

Interfacial exchange, magnetic coupling and magnetoresistance in ultra-thin GdN/NbN/GdN tri-layers

NASA Astrophysics Data System (ADS)

Takamura, Yota; Goncalves, Rafael S.; Cascales, Juan Pedro; Altinkok, Atilgan; de Araujo, Clodoaldo I. L.; Lauter, Valeria; Moodera, Jagadeesh S.; MIT Team

Superconducting spin-valve structures with a superconductive (SC) spacer sandwiched between ferromagnetic (FM) insulating layers [Li PRL 2013, Senapati APL 2013, Zhu Nat. Mat. 2016.] are attractive since the SC and FM characteristics can mutually be controlled by the proximity effect. We investigated reactively sputtered GdN/NbN/GdN tri-layer structures with various (SC) NbN spacer thicknesses (dNbN) from superconducting to normal layers. Magnetoresistive behavior similar to GMR in metallic magnetic multilayers was observed in the tri-layers with dNbN between 5-10 monolayers (ML), where thinner NbN layers did not show superconductivity down to 4.2 K. The occurrence of GMR signal indicates the presence of a ML of FM metallic layers at the GdN/NbN interfaces. Susceptibility and transport measurements in these samples revealed that the interface layers (ILs) are ferromagnetically coupled with adjacent GdN layers. The thickness of each of the IL is deduced to be about 1.25 ML, and as a result for dNbN <2.5-ML the two FM layers in the tri-layer were magnetically coupled and switched simultaneously. These findings and interfacial characterization by various techniques will be presented. Work supported by NSF and ONR Grants.

Organic light-emitting diodes with a spacer enhanced exciplex emission

NASA Astrophysics Data System (ADS)

Yan, Fei; Chen, Rui; Sun, Handong; Wei Sun, Xiao

2014-04-01

By introducing a spacer molecule into the blended exciplex emissive layer, the performance of the bulk heterojunction exciplex organic light-emitting diodes (OLEDs) was improved dramatically; the maximum luminous efficiency was enhanced by about 22% from 7.9 cd/A to 9.7 cd/A, and the luminous efficiency drop was reduced by 28% at 400 mA/cm2. Besides the suppressed annihilation of exciton, the time-resolved photoluminescence measurements indicated that the spacer enhanced the delayed fluorescence through increasing the backward intersystem crossing rate from the triplet to singlet exciplex state. This method is useful for developing high performance exciplex OLEDs.

A generalized analytical model for radiative transfer in vacuum thermal insulation of space vehicles

NASA Astrophysics Data System (ADS)

Krainova, Irina V.; Dombrovsky, Leonid A.; Nenarokomov, Aleksey V.; Budnik, Sergey A.; Titov, Dmitry M.; Alifanov, Oleg M.

2017-08-01

The previously developed spectral model for radiative transfer in vacuum thermal insulation of space vehicles is generalized to take into account possible thermal contact between a fibrous spacer and one of the neighboring aluminum foil layers. An approximate analytical solution based on slightly modified two-flux approximation for radiative transfer in a semi-transparent fibrous spacer is derived. It was shown that thermal contact between the spacer and adjacent foil may decrease significantly the quality of thermal insulation because of an increase in radiative flux to/from the opposite aluminum foil. Theoretical predictions are confirmed by comparison with new results of laboratory experiments.

Multi-layered chalcogenides with potential for magnetism and superconductivity

DOE PAGES

Li, Li; Parker, David S.; dela Cruz, Clarina R.; ...

2016-10-24

Layered thallium copper chalcogenides can form single, double, or triple layers of Cu– Ch separated by Tl sheets. Here we report on the preparation and properties of Tl-based materials of TlCu 2Se 2, TlCu 4S 3, TlCu 4Se 3 and TlCu 6S 4. Having no long-range magnetism for these materials is quite surprising considering the possibilities of inter- and intra-layer exchange interactions through Cu 3 d, and we measure by magnetic susceptibility and confirm by neutron diffraction. First principles density-functional theory calculations for both the single-layer TlCu 2Se 2 (isostructural to the ‘122’ iron-based superconductors) and the double-layer TlCu 4Semore » 3 suggest a lack of Fermi-level spectral weight that is needed to drive a magnetic or superconducting instability. Furthermore, for multiple structural layers with Fe, there is much greater likelihood for magnetism and superconductivity.« less

Method for forming silver-copper mixed kesterite semiconductor film

DOEpatents

Gershon, Talia S.; Gunawan, Oki; Lee, Yun S.; Mankad, Ravin

2018-01-23

After forming a layer of a Cu-deficient kesterite compound having the formula Cu.sub.2-xZn.sub.1+xSn(S.sub.ySe.sub.1-y).sub.4, wherein 0

Effect of Ag as a surfactant on the thermal stability in Cu/Co multilayers

NASA Astrophysics Data System (ADS)

Gupta, M.; Gupta, A.; Amir, S. M.; Stahn, J.; Zegenhagen, J.

2010-02-01

In the present work we studied the effect of Ag as a surfactant in Cu/Co multilayers prepared by ion beam sputtering. Two identical samples of Cu/Co multilayers with 0.2nm Ag on a Cu buffer layer and without this Ag layer were deposited on Si substrates. It is known that Cu has a lower free energy than Co, and therefore, the Cu/Co interfaces are not symmetric. Addition of Ag alters the kinetics and thermodynamics of the growth and triggers the layer by layer growth as Ag floats on the growing front balancing the surface free energy of Cu and Co. It was found that with addition of Ag surfactant the thermal stability of Cu/Co multilayer improves.

Oligo-m-phenyleneoxalamide copper(II) mesocates as electro-switchable ferromagnetic metal-organic wires.

PubMed

Pardo, Emilio; Ferrando-Soria, Jesús; Dul, Marie-Claire; Lescouëzec, Rodrigue; Journaux, Yves; Ruiz-García, Rafael; Cano, Joan; Julve, Miguel; Lloret, Francesc; Cañadillas-Delgado, Laura; Pasán, Jorge; Ruiz-Pérez, Catalina

2010-11-15

Double-stranded copper(II) string complexes of varying nuclearity, from di- to tetranuclear species, have been prepared by the Cu(II)-mediated self-assembly of a novel family of linear homo- and heteropolytopic ligands that contain two outer oxamato and either zero (1 b), one (2 b), or two (3 b) inner oxamidato donor groups separated by rigid 2-methyl-1,3-phenylene spacers. The X-ray crystal structures of these Cu(II) (n) complexes (n=2 (1 d), 3 (2 d), and 4 (3 d)) show a linear array of metal atoms with an overall twisted coordination geometry for both the outer CuN(2)O(2) and inner CuN(4) chromophores. Two such nonplanar all-syn bridging ligands 1 b-3 b in an anti arrangement clamp around the metal centers with alternating M and P helical chiralities to afford an overall double meso-helicate-type architecture for 1 d-3 d. Variable-temperature (2.0-300 K) magnetic susceptibility and variable-field (0-5.0 T) magnetization measurements for 1 d-3 d show the occurrence of S=nS(Cu) (n=2-4) high-spin ground states that arise from the moderate ferromagnetic coupling between the unpaired electrons of the linearly disposed Cu(II) ions (S(Cu)=1/2) through the two anti m-phenylenediamidate-type bridges (J values in the range of +15.0 to 16.8 cm(-1)). Density functional theory (DFT) calculations for 1 d-3 d evidence a sign alternation of the spin density in the meta-substituted phenylene spacers in agreement with a spin polarization exchange mechanism along the linear metal array with overall intermetallic distances between terminal metal centers in the range of 0.7-2.2 nm. Cyclic voltammetry (CV) and rotating-disk electrode (RDE) electrochemical measurements for 1 d-3 d show several reversible or quasireversible one- or two-electron steps that involve the consecutive metal-centered oxidation of the inner and outer Cu(II) ions (S(Cu)=1/2) to diamagnetic Cu(III) ones (S(Cu)=0) at relatively low formal potentials (E values in the range of +0.14 to 0.25 V and of +0.43 to 0.67 V vs. SCE, respectively). Further developments may be envisaged for this family of oligo-m-phenyleneoxalamide copper(II) double mesocates as electroswitchable ferromagnetic 'metal-organic wires' (MOWs) on the basis of their unique ferromagnetic and multicenter redox behaviors.

Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Teixeira, B. M. S.; Timopheev, A. A.; Caçoilo, N. F. F.; Auffret, S.; Sousa, R. C.; Dieny, B.; Alves, E.; Sobolev, N. A.

2018-05-01

We have used the ferromagnetic resonance in the X-band (9.37 GHz) to investigate the effect of 400 keV Ar+ irradiation on the perpendicular magnetic anisotropy (PMA) and Gilbert damping parameter, α, of double-MgO free layers designed for application in perpendicular magnetic tunnel junctions. The samples comprised a MgO/Fe72Co8B20/X(0.2 nm)/Fe72Co8B20/MgO layer stack, where X stands for an ultrathin Ta or W spacer. Samples with two different total FeCoB layer thicknesses, tFCB = 3.0 nm and tFCB = 2.6 nm, were irradiated with ion fluences ranging from 1012 cm-2 to 1016 cm-2. The effective first-order PMA field, BK1, decreased nearly linearly with the logarithm of the fluence for both FeCoB thicknesses and spacer elements. The decrease in BK1, which is likely caused by an ion-induced intermixing at the FeCoB/MgO interfaces, resulted in a reorientation of the magnetization of the free layers with tFCB = 2.6 nm, initially exhibiting a perpendicular easy-axis anisotropy. For intermediate fluences, 1013 cm-2 and 1014 cm-2, easy-cone states with different cone angles could be induced in the free layer with a W spacer. Importantly, no corresponding increase in the Gilbert damping was observed. This study shows that ion irradiation can be used to tune the easy-cone anisotropy in perpendicular magnetic tunnel junctions, which is interesting for spintronic applications such as spin-torque magnetic memory devices, oscillators, and sensors.

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

NASA Astrophysics Data System (ADS)

Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

2017-10-01

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Visible light emitting vertical cavity surface emitting lasers

DOEpatents

Bryan, Robert P.; Olbright, Gregory R.; Lott, James A.; Schneider, Jr., Richard P.

1995-01-01

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.eff is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of .lambda./n, typically within the green to red portion of the visible spectrum.

Visible light emitting vertical cavity surface emitting lasers

DOEpatents

Bryan, R.P.; Olbright, G.R.; Lott, J.A.; Schneider, R.P. Jr.

1995-06-27

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of {lambda}/n, typically within the green to red portion of the visible spectrum. 10 figs.

Modulation doping at BaSnO3LaInO3

NASA Astrophysics Data System (ADS)

Char, Kookrin; Shin, Juyeon; Kim, Young Mo; Kim, Youjung

We recently reported on the conductance enhancement at the interface between two band insulators: LaInO3 (LIO) and BaSnO3 (BSO). These two-dimensional electron gas-like (2DEG) states at the LIO/Ba1-xLaxSnO3 (BLSO) polar interface display the stability, the controllability of the local carrier concentration, and the high electron mobility of BLSO. Search for the origin of enhanced conductance at the interface has been carried out, and one of the findings is that the doping level of BSO is a critical parameter for the polar charge contribution . We have also investigated a new modulated heterostructure by inserting an undoped BSO spacer layer at the LIO/BLSO interface. As increasing the thickness of the spacer layer, the carrier concentration and the mobility continually decreased. We attribute the results to the modified band bending as the thickness of the spacer layer varies and to the dislocation-limited transport. However, when we controlled the band bending by field effect, improved mobility was observed in these modulated heterostructures. This new modulated heterostructures of the LIO/BSO polar interface look promising not only for higher electron mobility devices but also for elucidating the mechanism of the 2DEG-like behavior. Samsung science and technology foundation.

Development of High-Speed Copper Chemical Mechanical Polishing Slurry for Through Silicon Via Application Based on Friction Analysis Using Atomic Force Microscope

NASA Astrophysics Data System (ADS)

Amanokura, Jin; Ono, Hiroshi; Hombo, Kyoko

2011-05-01

In order to obtain a high-speed copper chemical mechanical polishing (CMP) process for through silicon vias (TSV) application, we developed a new Cu CMP slurry through friction analysis of Cu reaction layer by an atomic force microscope (AFM) technique. A lateral modulation friction force microscope (LM-FFM) is able to measure the friction value properly giving a vibration to the layer. We evaluated the torsional displacement between the probe of the LM-FFM and the Cu reaction layer under a 5 nm vibration to cancel the shape effect of the Cu reaction layer. The developed Cu CMP slurry forms a frictionally easy-removable Cu reaction layer.

Electron Scattering at Surfaces of Epitaxial Metal Layers

NASA Astrophysics Data System (ADS)

Chawla, Jasmeet Singh

In the field of electron transport in metal films and wires, the 'size effect' refers to the increase in the resistivity of the films and wires as their critical dimensions (thickness of film, width and height of wires) approach or become less than the electron mean free path lambda, which is, for example, 39 nm for bulk copper at room temperature. This size-effect is currently of great concern to the semiconductor industry because the continued downscaling of feature sizes has already lead to Cu interconnect wires in this size effect regime, with a reported 2.5 times higher resistivity for 40 nm wide Cu wires than for bulk Cu. Silver is a possible alternate material for interconnect wires and titanium nitride is proposed as a gate metal in novel field-effect-transistors. Therefore, it is important to develop an understanding of how the growth, the surface morphology, and the microstructure of ultrathin (few nanometers) Cu, Ag and TiN layers affect their electrical properties. This dissertation aims to advance the scientific knowledge of electron scattering at surfaces (external surfaces and grain boundaries), that are, the primary reasons for the size-effect in metal conductors. The effect of surface and grain boundary scattering on the resistivity of Cu thin films and nanowires is separately quantified using (i) in situ transport measurements on single-crystal, atomically smooth Cu(001) layers, (ii) textured polycrystalline Cu(111) layers and patterned wires with independently varying grain size, thickness and line width, and (iii) in situ grown interfaces including Cu-Ta, Cu-MgO, Cu-vacuum and Cu-oxygen. In addition, the electron surface scattering is also measured in situ for single-crystal Ag(001), (111) twinned epitaxial Ag(001), and single-crystal TiN(001) layers. Cu(001), Ag(001), and TiN(001) layers with a minimum continuous thickness of 4, 3.5 and 1.8 nm, respectively, are grown by ultra-high vacuum magnetron sputter deposition on MgO(001) substrates with and without thin epitaxial TiN(001) wetting layers and are studied for structure, crystalline quality, surface morphology, density and composition by a combination of x-ray diffraction theta-2theta scans, o-rocking curves, pole figures, reciprocal space mapping, Rutherford backscattering, x-ray reflectometry and transmission electron microscopy. The TiN(001) surface suppresses Cu and Ag dewetting, yielding lower defect density, no twinning, and smaller surface roughness than if grown on MgO(001). Textured polycrystalline Cu(111) layers 25-50-nm-thick are deposited on a stack of 7.5-nm-Ta on SiO2/Si(001), and subsequent in situ annealing at 350°C followed by sputter etching in Ar plasma yields Cu layers with independently variable thickness and grain size. Cu nanowires, 75 to 350 nm wide, are fabricated from Cu layers with different average grain size using a subtractive patterning process. In situ electron transport measurements at room temperature in vacuum and at 77 K in liquid nitrogen for single-crystal Cu and Ag layers is consistent with the Fuchs-Sondheimer (FS) model and indicates specular scattering at the metal-vacuum boundary with an average specularity parameter p = 0.8 and 0.6, respectively. In contrast, layers measured ex situ show diffuse surface scattering due to sub-monolayer oxidation. Also, addition of Ta atoms on Cu(001) surface perturbs the smooth interface potential and results in completely diffuse scattering at the Cu-Ta interface, and in turn, a higher resistivity of single-crystal Cu layers. In situ exposure of Cu(001) layers to O2 between 10 -3 and 105 Pa-s results in a sequential increase, decrease and increase of the electrical resistance which is attributed to specular surface scattering for clean Cu(001) and for surfaces with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. Electron transport measurements for polycrystalline Cu layers and wires show a 10-15% and 7-9% decrease in resistivity, respectively, when increasing the average lateral grain size by a factor of 1.8. The maximum resistivity decrease that can be achieved by increasing the grain size of polycrystalline Cu layers with an average grain size approximately ˜2.5x the layer thickness is 20-26%.

Multi-phase back contacts for CIS solar cells

DOEpatents

Rockett, A.A.; Yang, L.C.

1995-12-19

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe{sub 2} where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor. 15 figs.

Multi-phase back contacts for CIS solar cells

DOEpatents

Rockett, Angus A.; Yang, Li-Chung

1995-01-01

Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.

Exhibition of veiled features in diffusion bonding of titanium alloy and stainless steel via copper

NASA Astrophysics Data System (ADS)

Thirunavukarasu, Gopinath; Kundu, Sukumar; Laha, Tapas; Roy, Deb; Chatterjee, Subrata

2017-11-01

An investigation was carried out to know the extent of influence of bonding-time on the interface structure and mechanical properties of diffusion bonding (DB) of TiA|Cu|SS. DB of Ti6Al4V (TiA) and 304 stainless steel (SS) using pure copper (Cu) of 200-μm thickness were processed in vacuum using 4-MPa bonding-pressure at 1123 K from 15 to 120 min in steps of 15 min. Preparation of DB was not possible when bonding-time was less than 60 min as the bonding at Cu|SS interface was unsuccessful in spite of effective bonding at TiA|Cu interface; however, successful DB were produced when the bonding-time was 60 min and beyond. DB processed for 60 and 75 min (classified as shorter bonding-time interval) showed distinctive characteristics (structural, mechanical, and fractural) as compared to the DB processed for 90, 105, and 120 min (classified as longer bonding-time interval). DB processed for 60 and 75 min exhibited layer-wise Cu-Ti-based intermetallics at TiA|Cu interface, whereas Cu|SS interface was completely free from reaction products. The layer-wise structure of Cu-Ti-based intermetallics were not observed at TiA|Cu interface in the DB processed for longer bonding-time; however, the Cu|SS interface had layer-wise ternary intermetallic compounds (T1, T2, and T3) of Cu-Fe-Ti-based along with σ phase depending upon the bonding-time chosen. Diffusivity of Ti-atoms in Cu-layer (DTi in Cu-layer) was much greater than the diffusivity of Fe-atoms in Cu-layer (DFe in Cu-layer). Ti-atoms reached Cu|SS interface but Fe-atoms were unable to reach TiA|Cu interface. It was observed that DB fractured at Cu|SS interface when processed for shorter bonding-time interval, whereas the DB processed for longer bonding-time interval fractured apparently at the middle of Cu-foil region predominantly due to the existence of brittle Cu-Fe-Ti-based intermetallics.

Effect of Ni addition to the Cu substrate on the interfacial reaction and IMC growth with Sn3.0Ag0.5Cu solder

NASA Astrophysics Data System (ADS)

Zhang, Xudong; Hu, Xiaowu; Jiang, Xiongxin; Li, Yulong

2018-04-01

The formation and growth of intermetallic compound (IMC) layer at the interface between Sn3.0Ag0.5Cu (SAC305) solder and Cu- xNi ( x = 0, 0.5, 1.5, 5, 10 wt%) substrate during reflowing and aging were investigated. The soldering was conducted at 270 °C using reflowing method, following by aging treatment at 150 °C for up to 360 h. The experimental results indicated that the total thickness of IMC increased with increasing aging time. The scallop-like Cu6Sn5 and planar-like Cu3Sn IMC layer were observed between SAC305 solder and purely Cu substrate. As the content of Ni element in Cu substrate was 0.5% or 1.5%, the scallop-like Cu6Sn5 and planar-like Cu3Sn IMC layer were still found between solder and Cu-Ni substrate and the total thickness of IMC layer decreased with the increasing Ni content. Besides, when the Ni content was up to 5%, the long prismatic (Cu,Ni)6Sn5 phase was the only product between solder and substrate and the total thickness of IMC layer increased significantly. Interestingly, the total thickness of IMC decreased slightly as the Ni addition was up to 10%. In the end, the grains of interfacial IMC layer became coarser with aging time increasing while the addition of Ni in Cu substrate could refine IMC grains.

Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

NASA Astrophysics Data System (ADS)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 < Δχ < 0.7, depends on bandgap. Our simulations examine various electron reflector layer materials and conclude the most suitable electron reflector layer for this real CIGS solar cells. ZnSnP2, CdSiAs2, GaAs, CdTe, Cu2ZnSnS4, InP, CuO, Pb10Ag3Sb11S28, CuIn5S8, SnS, PbCuSbS3, Cu3AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

Comparative study of 64Cu/NOTA-[D-Tyr6,βAla11,Thi13,Nle14]BBN(6-14) monomer and dimers for prostate cancer PET imaging

PubMed Central

2012-01-01

Background Gastrin-releasing peptide receptors [GRPR] are highly over-expressed in multiple cancers and have been studied as a diagnostic target. Multimeric gastrin-releasing peptides are expected to have enhanced tumor uptake and affinity for GRPR. In this study, a 64Cu-labeled 1,4,7-triazacyclononane-1,4,7-triacetic acid [NOTA]-monomer and two NOTA-dimers of [D-Tyr6,βAla11, Thi13, Nle14]bombesin(6-14) ] [BBN(6-14)] were compared. Methods Monomeric and dimeric peptides were synthesized on solid phase support and radiolabeled with 64Cu. NOTA-dimer 1 consists of asymmetrically linked BBN(6-14), while NOTA-dimer 2 has similar spacer between the two BBN(6-14) ligands and the chelator. In vitro GRPR-binding affinities were determined with competitive binding assays on PC3 human prostate cancer cells. In vivo stability and biodistribution of radiolabeled compounds were assessed in Balb/c mice. Cellular uptake and efflux were measured with radiolabeled NOTA-monomer and NOTA-dimer 2 on PC3 cells for up to 4 h. In vivo biodistribution kinetics were measured in PC3 tumor-bearing Balb/c nude mice by μ-positron emission tomography [μPET] imaging and confirmed by dissection and counting. Results NOTA-monomer, NOTA-dimers 1 and 2 were prepared with purity of 99%. The inhibition constants of the three BBN peptides were comparable and in the low nanomolar range. All 64Cu-labeled peptides were stable up to 24 h in mouse plasma and 1 h in vivo. 64Cu/NOTA-dimer 2 featuring a longer spacer between the two BBN(6-14) ligands is a more potent GRPR-targeting probe than 64Cu/NOTA-dimer 1. PC3 tumor uptake profiles are slightly different for 64Cu/NOTA-monomer and 64Cu/NOTA-dimer 2; the monomeric BBN-peptide tracer exhibited higher tumor uptake during the first 0.5 h and a fast renal clearance resulting in higher tumor-to-muscle ratio when compared to 64Cu/NOTA-dimer 2. The latter exhibited higher tumor-to-blood ratio and was retained longer at the tumor site when compared to 64Cu/NOTA-monomer. Lower ratios of tumor-to-blood and tumor-to-muscle in blocking experiments showed GRPR-dependant tumor uptake for both tracers. Conclusion Both 64Cu/NOTA-monomer and 64Cu/NOTA-dimer 2 are suitable for detecting GRPR-positive prostate cancer in vivo by PET. Tumor retention was improved in vivo with 64Cu/NOTA-dimer 2 by applying polyvalency effect and/or statistical rebinding. PMID:22333272

Comparative study of 64Cu/NOTA-[D-Tyr6,βAla11,Thi13,Nle14]BBN(6-14) monomer and dimers for prostate cancer PET imaging.

PubMed

Fournier, Patrick; Dumulon-Perreault, Véronique; Ait-Mohand, Samia; Langlois, Réjean; Bénard, François; Lecomte, Roger; Guérin, Brigitte

2012-02-14

Gastrin-releasing peptide receptors [GRPR] are highly over-expressed in multiple cancers and have been studied as a diagnostic target. Multimeric gastrin-releasing peptides are expected to have enhanced tumor uptake and affinity for GRPR. In this study, a 64Cu-labeled 1,4,7-triazacyclononane-1,4,7-triacetic acid [NOTA]-monomer and two NOTA-dimers of [D-Tyr6,βAla11, Thi13, Nle14]bombesin(6-14) ] [BBN(6-14)] were compared. Monomeric and dimeric peptides were synthesized on solid phase support and radiolabeled with 64Cu. NOTA-dimer 1 consists of asymmetrically linked BBN(6-14), while NOTA-dimer 2 has similar spacer between the two BBN(6-14) ligands and the chelator. In vitro GRPR-binding affinities were determined with competitive binding assays on PC3 human prostate cancer cells. In vivo stability and biodistribution of radiolabeled compounds were assessed in Balb/c mice. Cellular uptake and efflux were measured with radiolabeled NOTA-monomer and NOTA-dimer 2 on PC3 cells for up to 4 h. In vivo biodistribution kinetics were measured in PC3 tumor-bearing Balb/c nude mice by μ-positron emission tomography [μPET] imaging and confirmed by dissection and counting. NOTA-monomer, NOTA-dimers 1 and 2 were prepared with purity of 99%. The inhibition constants of the three BBN peptides were comparable and in the low nanomolar range. All 64Cu-labeled peptides were stable up to 24 h in mouse plasma and 1 h in vivo. 64Cu/NOTA-dimer 2 featuring a longer spacer between the two BBN(6-14) ligands is a more potent GRPR-targeting probe than 64Cu/NOTA-dimer 1. PC3 tumor uptake profiles are slightly different for 64Cu/NOTA-monomer and 64Cu/NOTA-dimer 2; the monomeric BBN-peptide tracer exhibited higher tumor uptake during the first 0.5 h and a fast renal clearance resulting in higher tumor-to-muscle ratio when compared to 64Cu/NOTA-dimer 2. The latter exhibited higher tumor-to-blood ratio and was retained longer at the tumor site when compared to 64Cu/NOTA-monomer. Lower ratios of tumor-to-blood and tumor-to-muscle in blocking experiments showed GRPR-dependant tumor uptake for both tracers. Both 64Cu/NOTA-monomer and 64Cu/NOTA-dimer 2 are suitable for detecting GRPR-positive prostate cancer in vivo by PET. Tumor retention was improved in vivo with 64Cu/NOTA-dimer 2 by applying polyvalency effect and/or statistical rebinding.

Effect of Mass Proportion of Municipal Solid Waste Incinerator Bottom Ash Layer to Municipal Solid Waste Layer on the Cu and Zn Discharge from Landfill.

PubMed

Kong, Qingna; Yao, Jun; Qiu, Zhanhong; Shen, Dongsheng

2016-01-01

Municipal solid waste incinerator (MSWI) bottom ash is often used as the protection layer for the geomembrane and intermediate layer in the landfill. In this study, three sets of simulated landfills with different mass proportion of MSWI bottom ash layer to municipal solid waste (MSW) layer were operated. Cu and Zn concentrations in the leachates and MSW were monitored to investigate the effect of MSWI bottom ash layer on the Cu and Zn discharge from the landfill. The results showed that the Zn discharge was dependent on the mass proportion of MSWI bottom ash layer. The pH of landfill was not notably increased when the mass proportion of MSWI bottom ash layer to MSW layer was 1 : 9, resulting in the enhancement of the Zn discharge. However, Zn discharge was mitigated when the mass proportion was 2 : 8, as the pH of landfill was notably promoted. The discharge of Cu was not dependent on the mass proportion, due to the great affinity of Cu to organic matter. Moreover, Cu and Zn contents of the sub-MSW layer increased due to the MSWI bottom ash layer. Therefore, the MSWI bottom ash layer can increase the potential environmental threat of the landfill.

Alloying effect of copper on the corrosion properties of low-alloy steel for flue gas desulfurization system

NASA Astrophysics Data System (ADS)

Kim, Seon-Hong; Park, Sun-Ah; Kim, Jung-Gu; Shin, Kee-Sam; He, Yinsheng

2015-03-01

The alloying effect of Cu for a flue gas desulfurization materials was investigated using the electrochemical methods in the modified green death solution and the surface analyses. The test results demonstrated that the densely formed rust layer with high metallic Cu content improves the corrosion resistance of Cu-containing steel in the flue gas desulfurization (FGD) environment. The rust layer on the surface of the 0.02 wt% Cu steel, which has an insufficient Cu content, was less protective than others. The 0.05 wt% Cu steel represented the highest corrosion resistance due to the formation of the densely formed rust layer with optimum Cu content. Because the free standing Cu2S precipitates had the insoluble characteristic in highly acidic solution, it produced the relatively porous Cu-enriched layer on the 0.08 wt% Cu steel surface. From these phenomena, the corrosion resistance of specimen decreased as the Cu content of specimen increased from 0.05 wt% to 0.08 wt%.

Effect of immersion time in a modified green death solution on the rust layer of Cu-containing low-alloy steel

NASA Astrophysics Data System (ADS)

Kim, Seon-Hong; Kwon, Min-Seok; Kim, Jung-Gu

2017-01-01

The corrosion resistance of low-alloy steel containing 0.35 wt% copper, as a function of immersion time in a modified green death solution, was investigated using electrochemical methods and surface analysis. After 30 min of immersion, the steel surface was covered with a Cu-enriched film. Improvement of the film properties and increases in the corrosion resistance were realized for the immersion time up to 6 h due to the development of the Cu-enriched layer. However, the Cu particle was formed in the Cu-enriched layer for the immersion time beyond 6 h. Since the formation of the Cu particle generated a Cu-depletion region, micro-galvanic corrosion between the Cu particle and the Cu-depletion region lead to the localized film breakdown on the surface film. The localized film breakdown, which decreased the corrosion properties of the Cu-containing steel, was accelerated by the continuous formation of Cu particles in the rust layer.

Electronic absorption band broadening and surface roughening of phthalocyanine double layers by saturated solvent vapor treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jinhyun; Yim, Sanggyu, E-mail: sgyim@kookmin.ac.kr

2012-10-15

Variations in the electronic absorption (EA) and surface morphology of three types of phthalocyanine (Pc) thin film systems, i.e. copper phthalocyanine (CuPc) single layer, zinc phthalocyanine (ZnPc) single layer, and ZnPc on CuPc (CuPc/ZnPc) double layer film, treated with saturated acetone vapor were investigated. For the treated CuPc single layer film, the surface roughness slightly increased and bundles of nanorods were formed, while the EA varied little. In contrast, for the ZnPc single layer film, the relatively high solubility of ZnPc led to a considerable shift in the absorption bands as well as a large increase in the surface roughnessmore » and formation of long and wide nano-beams, indicating a part of the ZnPc molecules dissolved in acetone, which altered their molecular stacking. For the CuPc/ZnPc film, the saturated acetone vapor treatment resulted in morphological changes in mainly the upper ZnPc layer due to the significantly low solubility of the underlying CuPc layer. The treatment also broadened the EA band, which involved a combination of unchanged CuPc and changed ZnPc absorption.« less

Giant magnetoresistance (GMR) behavior of electrodeposited NiFe/Cu multilayers: Dependence of non-magnetic and magnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Kuru, Hilal; Kockar, Hakan; Alper, Mursel

2017-12-01

Giant magnetoresistance (GMR) behavior in electrodeposited NiFe/Cu multilayers was investigated as a function of non-magnetic (Cu) and ferromagnetic (NiFe) layer thicknesses, respectively. Prior to the GMR analysis, structural and magnetic analyses of the multilayers were also studied. The elemental analysis of the multilayers indicated that the Cu and Ni content in the multilayers increase with increasing Cu and NiFe layer thickness, respectively. The structural studies by X-ray diffraction revealed that all multilayers have face centred cubic structure with preferred (1 1 0) crystal orientation as their substrates. The magnetic properties studied with the vibrating sample magnetometer showed that the magnetizations of the samples are significantly affected by the layer thicknesses. Saturation magnetisation, Ms increases from 45 to 225 emu/cm3 with increasing NiFe layer thickness. The increase in the Ni content of the multilayers with a small Fe content causes an increase in the Ms. And, the coercivities ranging from 2 to 24 Oe are between the soft and hard magnetic properties. Also, the magnetic easy axis of the multilayers was found to be in the film plane. Magnetoresistance measurements showed that all multilayers exhibited the GMR behavior. The GMR magnitude increases with increasing Cu layer thickness and reaches its maximum value of 10% at the Cu layer thickness of 1 nm, then it decreases. And similarly, the GMR magnitude increases and reaches highest value of pure GMR (10%) for the NiFe layer thickness of 3 nm, and beyond this point GMR decreases with increasing NiFe layer thickness. Some small component of the anisotropic magnetoresistance was also observed at thin Cu and thick NiFe layer thicknesses. It is seen that the highest GMR values up to 10% were obtained in electrodeposited NiFe/Cu multilayers up to now. The structural, magnetic and magnetoresistance properties of the NiFe/Cu were reported via the variations of the thicknesses of Cu and NiFe layers with stressing the role of layer thicknesses on the high GMR behavior.

SU-E-T-333: Towards Customizable Radiotherapy Enhancement (CuRE) for Prostate Cancer Using Cisplatin Nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, N; Cifter, G; Sajo, E

2014-06-01

Purpose: Replacing routinely used brachytherapy spacers with multifunctional ones loaded with cisplatin nanoparticles (CNP), which can be released into the tumor after implantation, could enable customizable radiation boosting to the prostate tumor in addition to chemotherapy effect. This study investigates the feasibility of customizing the intra-tumor biodistribution and corresponding dose enhancement (DEF) over time for the released CNP as a function of nanoparticle size. Methods: Dose enhancement factors (DEF) due to photon-induced emission of photo-/Auger electrons from CNPs were calculated as a function of concentration using previously published analytical calculation method. An experimentally determined diffusion coefficient (D) for 10 nmmore » nanoparticles in mouse tumor model was employed to estimate D for other sizes using the Stoke- Einstein equation. The error function diffusion model in the experimental study was applied to generate the intra-tumor concentration profile for a burst release of CNPs from the spacer over time. The corresponding DEF profiles were then determined for brachytherapy using Pd-103 and I-125 sources. Results: As expected, the generated profiles showed greater DEF over time for smaller CNP sizes at sample distances from the spacer. For example, for a centrally located spacer, clinically significant DEF (> 20%) could be achieved near the tumor periphery (ca. 0.85 cm distance from the spacer for average PCa tumor size) after 20, and 100 days, respectively for CNPs sizes of 2 nm, and 10 nm, using I-125. Meanwhile for Pd-103, clinically significant DEF could be achieved at the same position after 22 and 108 days, respectively, for same size particles. Conclusion: Our preliminary results demonstrate the feasibility of customizing dose enhancement to prostate tumors as a function of spacer location, brachytherapy source type or size of CNPs released from multifunctional spacers. Such an approach could enable customizable radiation boosting to tumor sub-volumes, while minimizing dose to healthy tissues.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Srivastava, Himanshu; Ganguli, Tapas; Deb, S. K.

The in-situ growth of CuO nanowires was studied by Energy Dispersive X-ray Diffraction (EDXRD) to observe the mechanism of growth. The study was carried out for comparison at two temperatures—at 500 °C, the optimum temperature of the nanowires growth, and at 300 °C just below the temperature range of the growth. The in situ observation revealed the successive oxidation of Cu foil to Cu{sub 2}O layer and finally to CuO layer. Further analysis showed the presence of a compressive stress in CuO layer due to interface at CuO and Cu{sub 2}O layers. The compressive stress was found to increase withmore » the growth of the nanowires at 500 °C while it relaxed with the growth of CuO layer at 300 °C. The present results do not support the existing model of stress relaxation induced growth of nanowires. Based on the detailed Transmission Electron Microscope, Scanning Electron Microscope, and EDXRD results, a microstructure based growth model has been suggested.« less

ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

DOEpatents

Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

2007-02-20

A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

Cyclic Thermal Stress-Induced Degradation of Cu Metallization on Si3N4 Substrate at -40°C to 300°C

NASA Astrophysics Data System (ADS)

Lang, Fengqun; Yamaguchi, Hiroshi; Nakagawa, Hiroshi; Sato, Hiroshi

2015-01-01

The high-temperature reliability of active metal brazed copper (AMC) on Si3N4 ceramic substrates used for fabricating SiC high-temperature power modules was investigated under harsh environments. The AMC substrate underwent isothermal storage at 300°C for up to 3000 h and a thermal cycling test at -40°C to 300°C for up to 3000 cycles. During isothermal storage at 300°C, the AMC substrate exhibited high reliability, characterized by very little deformation of the copper (Cu) layer, low crack growth, and low oxidation rate of the Cu layer. Under thermal cycling conditions at -40°C to 300°C, no detachment of the Cu layer was observed even after the maximum 3000 cycles of the experiment. However, serious deformation of the Cu layer occurred and progressed as the number of thermal cycles increased, thus significantly roughening the surface of the Cu metallized layer. The cyclic thermal stress led to a significant increase in the crack growth and oxidation of the Cu layer. The maximum depth of the copper oxides reached up to 5/6 of the Cu thickness. The deformation of the Cu layer was the main cause of the decrease of the bond strength under thermal cycling conditions. The shear strength of the SiC chips bonded on the AMC substrate with a Au-12 wt.%Ge solder decreased from the original 83 MPa to 14 MPa after 3000 cycles. Therefore, the cyclic thermal stress destroyed the Cu oxides and enhanced the oxidation of the Cu layer.

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction.

PubMed

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Phung, Pham Kim; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2016-01-01

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

Influence of External Beam Radiotherapy on the Properties of Polymethyl Methacrylate-Versus Silicone-Induced Membranes in a Bilateral Segmental Bone Defect in Rats.

PubMed

Sagardoy, Thomas; Ehret, Camille; Bareille, Reine; Benoit, Jérôme; Amedee, Joëlle; De Mones, Erwan

2018-05-01

Standard care for malignant tumors arising next to a bone structure is surgical removal with safety margins, followed by external beam radiotherapy (EBRT). Complete tumor removal can result in large bone defects. A two-step bone reconstruction technique using the induced membrane (IM) technique has proven its efficacy to bridge gap nonunion. During the first step, a spacer is placed in the bone gap. The spacer then is removed and the IM around it is filled with autologous cancellous bone graft. However, the feasibility of this technique with the addition of adjuvant EBRT between the two reconstruction steps has not yet been studied. Polymethyl methacrylate (PMMA) used to be the standard spacer material for the first step. Silicone spacers could replace them owing to their good behavior when submitted to EBRT and their easier removal from the surgical site during the second step. The aim of this study was to evaluate the influence of EBRT on the histological and biochemical properties of IM induced using PMMA or silicone as spacer. The analyses were performed on PMMA- or silicone-IM with and without EBRT in a 6-mm bilateral femoral defect in 32 rats. Thickness and vessel content were measured in both groups. Bone morphogenetic protein 2 (BMP2) and vascular endothelial growth factor (VEGF) content in lysates of the crushed membranes were measured by enzyme immunoassay. Finally, alkaline phosphatase activity was analyzed in human bone marrow stromal cell cultures in contact with the same lysates. EBRT did not change the histological structure of the cellular internal layer or the fibrous outer layer. The nature of the spacer only influenced IM thickness, PMMA-IM with external radiotherapy being significantly thicker. EBRT decreased the vascular density of IM but was less effective on VEGF/BMP2 production. In vitro, IM could have an osteoinductive potential on human bone marrow stem cells. EBRT did not modify the histological properties of IMs but decreased their vascular density. VEGF and BMP2 production within IMs was not affected by EBRT. Silicone spacers are able to induce membranes with similar histological characteristics to PMMA-IM.

Layer-by-Layer Self-Assembly of Plexcitonic Nanoparticles

DTIC Science & Technology

2013-08-12

nitrate , trisodium citrate tribasic dihydrate, sodium poly(styrene sulfonate) (PSS, MW ~70,000), poly(diallyldimethyl ammonium chloride ) (PDADMAC...Abstract: Colloidal suspensions of multilayer nanoparticles composed of a silver core, a polyelectrolyte spacer layer (inner shell), and a J-aggregate...multilayer architecture served as a framework for examining the coupling of the localized surface plasmon resonance exhibited by the silver core with

Antiferromagnetic exchange and magnetoresistance enhancement in Co-Re superlattices

NASA Astrophysics Data System (ADS)

Freitas, P. P.; Melo, L. V.; Trindade, I.; From, M.; Ferreira, J.; Monteiro, P.

1992-02-01

Co-Re superlattices were prepared that show either antiferromagnetic or ferromagnetic coupling between the Co layers depending on the Re spacer thickness. Enhanced saturation magnetoresistance occurs for antiferromagnetically coupled layers. The saturation magnetoresistance decays exponentially with Re thickness but does not depend critically on the Co thickness.

Effect of Mass Proportion of Municipal Solid Waste Incinerator Bottom Ash Layer to Municipal Solid Waste Layer on the Cu and Zn Discharge from Landfill

PubMed Central

Kong, Qingna; Qiu, Zhanhong; Shen, Dongsheng

2016-01-01

Municipal solid waste incinerator (MSWI) bottom ash is often used as the protection layer for the geomembrane and intermediate layer in the landfill. In this study, three sets of simulated landfills with different mass proportion of MSWI bottom ash layer to municipal solid waste (MSW) layer were operated. Cu and Zn concentrations in the leachates and MSW were monitored to investigate the effect of MSWI bottom ash layer on the Cu and Zn discharge from the landfill. The results showed that the Zn discharge was dependent on the mass proportion of MSWI bottom ash layer. The pH of landfill was not notably increased when the mass proportion of MSWI bottom ash layer to MSW layer was 1 : 9, resulting in the enhancement of the Zn discharge. However, Zn discharge was mitigated when the mass proportion was 2 : 8, as the pH of landfill was notably promoted. The discharge of Cu was not dependent on the mass proportion, due to the great affinity of Cu to organic matter. Moreover, Cu and Zn contents of the sub-MSW layer increased due to the MSWI bottom ash layer. Therefore, the MSWI bottom ash layer can increase the potential environmental threat of the landfill. PMID:28044139

Modifying exchange-spring behavior of CoPt/NiFe bilayer by inserting a Pt or Ru spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw; Tsai, C. L.; Lee, C.-M.

2015-05-07

We herein explore the possibility of obtaining tunable tilted magnetic anisotropy in ordered-CoPt (5 nm)/NiFe(t{sub NiFe}) bilayers through modifying their exchange spring behavior by inserting Pt and Ru-spacers. The tuning process of tilt angle magnetization of NiFe-layer was systematically investigated by varying the Pt or Ru thickness (t{sub Pt} or t{sub Ru}) from 0 to 8 nm at different thicknesses of NiFe (t{sub NiFe} = 1.5, 4.0, and 6.0 nm). Polar magneto-optic Kerr effect (p-MOKE) studies reveal that the bilayers grown in absence of spacers exhibit almost a rectangular hysteresis loop. With the insertion of Pt-spacer, the loop becomes more and more tilted as t{submore » Pt} increases; whereas, in the case of Ru-spacer, the nature of the loops is not simply changing in one direction. The estimated SQR{sub ⊥} (= θ{sub r}/θ{sub s}) values from the p-MOKE loops are found to monotonically decrease with increasing t{sub Pt} when t{sub Pt} ≦ 4 nm. In contrast, in the case of Ru-spacer, an oscillatory behavior for the SQR{sub ⊥} values is apparent when t{sub Ru} ≦ 4 nm. As a result, an oscillatory tilted angle of NiFe spin configuration was obtained in the case of Ru-spacer; while a decoupling effect was prominent for the Pt-spacer. The results of present study reveal that the insertion of Pt and Ru-spacers as an appropriate means for realizing tunable tilted magnetic anisotropy in the CoPt/NiFe exchange springs.« less

Adsorption, hydrogenation and dehydrogenation of C2H on a CoCu bimetallic layer

NASA Astrophysics Data System (ADS)

Wu, Donghai; Yuan, Jinyun; Yang, Baocheng; Chen, Houyang

2018-05-01

In this paper, adsorption, hydrogenation and dehydrogenation of C2H on a single atomic layer of bimetallic CoCu were investigated using first-principles calculations. The CoCu bimetallic layer is formed by Cu replacement of partial Co atoms on the top layer of a Co(111) surface. Our adsorption and reaction results showed those sites, which have stronger adsorption energy of C2H, possess higher reactivity. The bimetallic layer possesses higher reactivity than either of the pure monometallic layer. A mechanism of higher reactivity of the bimetallic layer is proposed and identified, i.e. in the bimetallic catalyst, the catalytic performance of one component is promoted by the second component, and in our work, the catalytic performance of Co atoms in the bimetallic layer are improved by introducing Cu atoms, lowing the activation barrier of the reaction of C2H. The bimetallic layer could tune adsorption and reaction of C2H by modulating the ratio of Co and Cu. Results of adsorption energies and adsorption configurations reveal that C2H prefers to be adsorbed in parallel on both the pure Co metallic and CoCu bimetallic layers, and Co atoms in subsurface which support the metallic or bimetallic layer have little effect on C2H adsorption. For hydrogenation reactions, the products greatly depend on the concentration and initial positions of hydrogen atoms, and the C2H hydrogenation forming acetylene is more favorable than forming vinylidene in both thermodynamics and kinetics. This study would provide fundamental guidance for hydrocarbon reactions on Co-based and/or Cu-based bimetallic surface chemistry and for development of new bimetallic catalysts.

Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer

NASA Astrophysics Data System (ADS)

Kaveh, M.; Gao, Q.; Jagadish, C.; Ge, J.; Duscher, G.; Wagner, H. P.

2016-12-01

Excitons are the most prominent optical excitations and controlling their emission is an important step towards new optical devices. We have investigated the exciton emission from uncoated and gold/aluminum quinoline (Alq3) coated GaAs-AlGaAs-GaAs core-shell nanowires (NWs) using temperature-, intensity- and polarization dependent photoluminescence (PL). Plasmonic GaAs-AlGaAs-GaAs NWs with a ˜10 nm thick Au coating but without an Alq3 spacer layer reveal a significant reduction of the PL intensity of the exciton emission compared with the uncoated NW sample. Plasmonic NW samples with the same nominal Au coverage and an additional Alq3 interlayer of 3 or 6 nm thickness show a clearly stronger PL intensity which increases with rising Alq3 spacer thickness. Time-resolved (TR) PL measurements reveal an increase of the exciton decay rate by a factor of up to two with decreasing Alq3 spacer thickness suggesting the presence of Förster energy transfer from NW excitons to plasmon oscillations in the gold film. The weak change of the decay time, however, indicates that Förster energy-transfer is only partially responsible for the PL quenching in the gold coated NWs. The main reason for the reduction of the PL emission is attributed to a gold induced band-bending in the GaAs NW core which causes exciton dissociation. With increasing Alq3 spacer thickness the band-bending decreases leading to a reduction of the exciton dissociation and PL quenching. Our interpretation is supported by electron energy loss spectroscopy measurements which show a signal reduction and blue shift of defect (possibly EL2) transitions when gold particles are deposited on NWs compared with bare or Alq3 coated NWs.

Controlling the exciton emission of gold coated GaAs-AlGaAs core-shell nanowires with an organic spacer layer.

PubMed

Kaveh, M; Gao, Q; Jagadish, C; Ge, J; Duscher, G; Wagner, H P

2016-12-02

Excitons are the most prominent optical excitations and controlling their emission is an important step towards new optical devices. We have investigated the exciton emission from uncoated and gold/aluminum quinoline (Alq 3 ) coated GaAs-AlGaAs-GaAs core-shell nanowires (NWs) using temperature-, intensity- and polarization dependent photoluminescence (PL). Plasmonic GaAs-AlGaAs-GaAs NWs with a ∼10 nm thick Au coating but without an Alq 3 spacer layer reveal a significant reduction of the PL intensity of the exciton emission compared with the uncoated NW sample. Plasmonic NW samples with the same nominal Au coverage and an additional Alq 3 interlayer of 3 or 6 nm thickness show a clearly stronger PL intensity which increases with rising Alq 3 spacer thickness. Time-resolved (TR) PL measurements reveal an increase of the exciton decay rate by a factor of up to two with decreasing Alq 3 spacer thickness suggesting the presence of Förster energy transfer from NW excitons to plasmon oscillations in the gold film. The weak change of the decay time, however, indicates that Förster energy-transfer is only partially responsible for the PL quenching in the gold coated NWs. The main reason for the reduction of the PL emission is attributed to a gold induced band-bending in the GaAs NW core which causes exciton dissociation. With increasing Alq 3 spacer thickness the band-bending decreases leading to a reduction of the exciton dissociation and PL quenching. Our interpretation is supported by electron energy loss spectroscopy measurements which show a signal reduction and blue shift of defect (possibly EL2) transitions when gold particles are deposited on NWs compared with bare or Alq 3 coated NWs.

Spot-size converter with a SiO(2) spacer layer between tapered Si and SiON waveguides for fiber-to-chip coupling.

PubMed

Maegami, Yuriko; Takei, Ryohei; Omoda, Emiko; Amano, Takeru; Okano, Makoto; Mori, Masahiko; Kamei, Toshihiro; Sakakibara, Youichi

2015-08-10

We experimentally demonstrate low-loss and polarization-insensitive fiber-to-chip coupling spot-size converters (SSCs) comprised of a three dimensionally tapered Si wire waveguide, a SiON secondary waveguide, and a SiO(2) spacer inserted between them. Fabricated SSCs with the SiO(2) spacer exhibit fiber-to-chip coupling loss of 1.5 dB/facet for both the quasi-TE and TM modes and a small wavelength dependence in the C- and L-band regions. The SiON secondary waveguide is present only around the SSC region, which significantly suppresses the influence of the well-known N-H absorption of plasma-deposited SiON at around 1510 nm.

Control of magnetic direction in multi-layer ferromagnetic devices by bias voltage

DOEpatents

You, Chun-Yeol; Bader, Samuel D.

2001-01-01

A system for controlling the direction of magnetization of materials comprising a ferromagnetic device with first and second ferromagnetic layers. The ferromagnetic layers are disposed such that they combine to form an interlayer with exchange coupling. An insulating layer and a spacer layer are located between the first and second ferromagnetic layers. A direct bias voltage is applied to the interlayer exchange coupling, causing the direction of magnetization of the second ferromagnetic layer to change. This change of magnetization direction occurs in the absence of any applied external magnetic field.

Hierarchical concave layered triangular PtCu alloy nanostructures: rational integration of dendritic nanostructures for efficient formic acid electrooxidation.

PubMed

Wu, Fengxia; Lai, Jianping; Zhang, Ling; Niu, Wenxin; Lou, Baohua; Luque, Rafael; Xu, Guobao

2018-05-08

The rational construction of multi-dimensional layered noble metal nanostructures is a great challenge since noble metals are not layer-structured materials. Herein, we report a one-pot hydrothermal synthetic method for PtCu hierarchical concave layered triangular (HCLT) nanostructures using dl-carnitine, KI, poly(vinylpyrrolidone), CuCl2, and H2PtCl6. The PtCu HCLT nanostructure is comprised of multilayered triangular dendrites. Its layer number is tunable by changing dl-carnitine concentrations, and the concavity/convexity of the PtCu triangle nanostructures is tunable by changing the H2PtCl6/CuCl2 ratio or KI concentrations. Hierarchical trigonal bipyramid nanoframes are also obtained under certain conditions. Because of its advantageous nanostructure and bimetallic synergetic effect, the obtained PtCu HCLT nanostructure exhibits enhanced electrocatalytic activity and prolonged stability to formic acid oxidation compared to commercial Pt black, Pd/C and some other nanostructures.

Metal-Insulator Transition in Copper Oxides Induced by Apex Displacements

NASA Astrophysics Data System (ADS)

Acharya, Swagata; Weber, Cédric; Plekhanov, Evgeny; Pashov, Dimitar; Taraphder, A.; Van Schilfgaarde, Mark

2018-04-01

High temperature superconductivity has been found in many kinds of compounds built from planes of Cu and O, separated by spacer layers. Understanding why critical temperatures are so high has been the subject of numerous investigations and extensive controversy. To realize high temperature superconductivity, parent compounds are either hole doped, such as La2 CuO4 (LCO) with Sr (LSCO), or electron doped, such as Nd2 CuO4 (NCO) with Ce (NCCO). In the electron-doped cuprates, the antiferromagnetic phase is much more robust than the superconducting phase. However, it was recently found that the reduction of residual out-of-plane apical oxygen dramatically affects the phase diagram, driving those compounds to a superconducting phase. Here we use a recently developed first-principles method to explore how displacement of the apical oxygen (AO) in LCO affects the optical gap, spin and charge susceptibilities, and superconducting order parameter. By combining quasiparticle self-consistent GW (QS GW) and dynamical mean-field theory (DMFT), we show that LCO is a Mott insulator, but small displacements of the apical oxygen drive the compound to a metallic state through a localization-delocalization transition, with a concomitant maximum in d -wave order parameter at the transition. We address the question of whether NCO can be seen as the limit of LCO with large apical displacements, and we elucidate the deep physical reasons why the behavior of NCO is so different from the hole-doped materials. We shed new light on the recent correlation observed between Tc and the charge transfer gap, while also providing a guide towards the design of optimized high-Tc superconductors. Further, our results suggest that strong correlation, enough to induce a Mott gap, may not be a prerequisite for high-Tc superconductivity.

Effect of deposition temperature on thermal stabilities of copper-carbon films in barrier-less Cu metallization

NASA Astrophysics Data System (ADS)

Zhu, Huan; Fu, Zhiqiang; Xie, Qi; Yue, Wen; Wang, Chengbiao; Kang, Jiajie; Zhu, Lina

2018-01-01

Copper-carbon alloy films have been applied in barrier-less Cu metallization as seed layers for improving the thermal stabilities. The effect of the deposition temperature on the microstructure and properties of C-doped Cu films on Si substrates was investigated. The films were prepared by ion beam-assisted deposition at various deposition temperatures by co-sputtering of Cu and graphite targets. No inter-diffusion between Cu and Si was observed in Cu(C) films throughout this experiment, because XRD patterns corresponding to their deep-level reaction product, namely, Cu3Si, were not observed in XRD patterns and EDS results of Cu(C) films. Amorphous carbon layer and SiC layer were found in the interface of Cu(C) as-deposited films when deposition temperature rose to 100 °C by TEM, high-resolution image and Fourier transformation pattern. The Cu(C) films deposited at 100 °C had the best thermal stabilities and the lowest electrical resistivity of 4.44 μW cm after annealing at 400 °C for 1 h. Cu agglomeration was observed in Cu(C) alloy films with deposition temperatures of 200, 300 and 400 °C, and the most serious agglomeration occurred in Cu(C) films deposited at 200 °C. Undesired Cu agglomeration resulted in a sharp increase in the resistivity after annealing at 300 °C for 1 h. The deposition temperature of 100 °C reflected the superior thermal stabilities of Cu(C) seed layers compared with those of other layers.

Artificially layered films of CuBa{sub 2} (Ca{sub 1{minus}x}Sr{sub x}){sub n{minus}1}Cu{sub n}O{sub y} grown using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aruta, C.; Balestrino, G.; Martellucci, S.

We have shown that the pulsed laser deposition technique (PLD) can be successfully used to grow artificially layered films of the CuBa{sub 2}(Ca{sub 1{minus}x}Sr{sub x}){sub n{minus}1}Cu{sub n}O{sub y} compound using only two targets having nominal composition BaCuO{sub y} and (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y}, respectively. n was varied between 2 and 5. We have demonstrated, by a kinematic analysis of the x-ray diffraction spectra that the average random discrete thickness fluctuations which affect both the BaCuO{sub y} and (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y} layers are much smaller than one atomic layer. Such features are confirmed by the appearance of sharp peaks evenmore » for the n=2 artificially layered structure where only one (Ca{sub 1{minus}x}Sr{sub x})CuO{sub y} cell is deposited in the stacking sequence. These results show that truly new structures can be obtained by a layer by layer deposition technique with a low interfacial disorder and give strong support to the idea of synthesizing new artificial high T{sub c} structures by the PLD technique.{copyright} {ital 1997 American Institute of Physics.}« less

Microstructure and Interfacial Reactions During Vacuum Brazing of Stainless Steel to Titanium Using Ag-28 pct Cu Alloy

NASA Astrophysics Data System (ADS)

Laik, A.; Shirzadi, A. A.; Sharma, G.; Tewari, R.; Jayakumar, T.; Dey, G. K.

2015-02-01

Microstructural evolution and interfacial reactions during vacuum brazing of grade-2 Ti and 304L-type stainless steel (SS) using eutectic alloy Ag-28 wt pct Cu were investigated. A thin Ni-depleted zone of -Fe(Cr, Ni) solid solution formed on the SS-side of the braze zone (BZ). Cu from the braze alloy, in combination with the dissolved Fe and Ti from the base materials, formed a layer of ternary compound , adjacent to Ti in the BZ. In addition, four binary intermetallic compounds, CuTi, CuTi, CuTi and CuTi formed as parallel contiguous layers in the BZ. The unreacted Ag solidified as islands within the layers of CuTi and CuTi. Formation of an amorphous phase at certain locations in the BZ could be revealed. The -Ti(Cu) layer, formed due to diffusion of Cu into Ti-based material, transformed to an -Ti + CuTi eutectoid with lamellar morphology. Tensile test showed that the brazed joints had strength of 112 MPa and failed at the BZ. The possible sequence of events that led to the final microstructure and the mode of failure of these joints were delineated.

Cu6Sn5 Whiskers Precipitated in Sn3.0Ag0.5Cu/Cu Interconnection in Concentrator Silicon Solar Cells Solder Layer

PubMed Central

Zhang, Liang; Liu, Zhi-quan; Yang, Fan; Zhong, Su-juan

2017-01-01

Cu6Sn5 whiskers precipitated in Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer were found and investigated after reflow soldering and during aging. Ag3Sn fibers can be observed around Cu6Sn5 whiskers in the matrix microstructure, which can play an active effect on the reliability of interconnection. Different morphologies of Cu6Sn5 whiskers can be observed, and hexagonal rod structure is the main morphology of Cu6Sn5 whiskers. A hollow structure can be observed in hexagonal Cu6Sn5 whiskers, and a screw dislocation mechanism was used to represent the Cu6Sn5 growth. Based on mechanical property testing and finite element simulation, Cu6Sn5 whiskers were regarded as having a negative effect on the durability of Sn3.0Ag0.5Cu/Cu interconnection in concentrator silicon solar cells solder layer. PMID:28772686

High-Performance Ultrathin Active Chiral Metamaterials.

PubMed

Wu, Zilong; Chen, Xiaodong; Wang, Mingsong; Dong, Jianwen; Zheng, Yuebing

2018-05-22

Ultrathin active chiral metamaterials with dynamically tunable and responsive optical chirality enable new optical sensors, modulators, and switches. Herein, we develop ultrathin active chiral metamaterials of highly tunable chiroptical responses by inducing tunable near-field coupling in the metamaterials and exploit the metamaterials as ultrasensitive sensors to detect trace amounts of solvent impurities. To demonstrate the active chiral metamaterials mediated by tunable near-field coupling, we design moiré chiral metamaterials (MCMs) as model metamaterials, which consist of two layers of identical Au nanohole arrays stacked upon one another in moiré patterns with a dielectric spacer layer between the Au layers. Our simulations, analytical fittings, and experiments reveal that spacer-dependent near-field coupling exists in the MCMs, which significantly enhances the spectral shift and line shape change of the circular dichroism (CD) spectra of the MCMs. Furthermore, we use a silk fibroin thin film as the spacer layer in the MCM. With the solvent-controllable swelling of the silk fibroin thin films, we demonstrate actively tunable near-field coupling and chiroptical responses of the silk-MCMs. Impressively, we have achieved the spectral shift over a wavelength range that is more than one full width at half-maximum and the sign inversion of the CD spectra in a single ultrathin (1/5 of wavelength in thickness) MCM. Finally, we apply the silk-MCMs as ultrasensitive sensors to detect trace amounts of solvent impurities down to 200 ppm, corresponding to an ultrahigh sensitivity of >10 5 nm/refractive index unit (RIU) and a figure of merit of 10 5 /RIU.

Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method.

PubMed

Diao, Chien-Chen; Kuo, Hsin-Hui; Tzou, Wen-Cheng; Chen, Yen-Lin; Yang, Cheng-Fu

2014-01-03

In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe₂ absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe₂ precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe₂ absorber layers. After spraying on Mo/glass substrates, the CuInSe₂ thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N₂ as atmosphere. When the CuInSe₂ thin films were annealed, without extra Se or H₂Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe₂ absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe₂ absorber layers could be controlled as the volume of used dispersed CuInSe₂-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe₂ absorber layers obtained by the Spray Coating Method.

Two-Step Physical Deposition of a Compact CuI Hole-Transport Layer and the Formation of an Interfacial Species in Perovskite Solar Cells.

PubMed

Gharibzadeh, Saba; Nejand, Bahram Abdollahi; Moshaii, Ahmad; Mohammadian, Nasim; Alizadeh, Amir Hossein; Mohammadpour, Rahele; Ahmadi, Vahid; Alizadeh, Abdolali

2016-08-09

A simple and practical approach is introduced for the deposition of CuI as an inexpensive inorganic hole-transport material (HTM) for the fabrication of low cost perovskite solar cells (PSCs) by gas-solid phase transformation of Cu to CuI. The method provides a uniform and well-controlled CuI layer with large grains and good compactness that prevents the direct connection between the contact electrodes. Solar cells prepared with CuI as the HTM with Au electrodes displays an exceptionally high short-circuit current density of 32 mA cm(-2) , owing to an interfacial species formed between the perovskite and the Cu resulting in a long wavelength contribution to the incident photon-to-electron conversion efficiency (IPCE), and an overall power conversion efficiency (PCE) of 7.4 %. The growth of crystalline and uniform CuI on a low roughness perovskite layer leads to remarkably high charge extraction in the cells, which originates from the high hole mobility of CuI in addition to a large number of contact points between CuI and the perovskite layer. In addition, the solvent-free method has no damaging side effect on the perovskite layer, which makes it an appropriate method for large scale applications of CuI in perovskite solar cells. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers

NASA Astrophysics Data System (ADS)

Gu, Wen; Xu, Tao; Zhang, Jianhua

2013-11-01

Copper sulfide (CuS) was used as the intermediate layer to build ohmic contact of Ga-Doped ZnO (GZO) transparent conduction layer (TCL) to p-GaN. The CuS and GZO layers were prepared by thermal evaporation and RF magnetron sputtering, respectively. Although the GZO-only contacts to p-GaN exhibit nonlinear behavior, ohmic contact with a specific contact resistance of 1.6 × 10-2 Ω cm2 has been realized by inserting 3 nm CuS layer between GZO and p-GaN. The optical transmittance of CuS/GZO film was measured to be higher than 80% in the range of 450-600 nm wavelength. The possible mechanism for the ohmic contact behavior can be attributed to the increased hole concentration of p-GaN surface induced by CuS films after annealing. The forward voltage of LEDs with CuS/GZO TCL has been reduced by 1.7 V at 20 mA and the output power has been increased by 29.6% at 100 mA compared with LEDs without CuS interlayer. These results indicated that using CuS intermediate layer could be a potential ohmic contact method to realize high-efficiency LEDs.

MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2001-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2002-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Critical CuI buffer layer surface density for organic molecular crystal orientation change

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Kwangseok; Kim, Jong Beom; Lee, Dong Ryeol, E-mail: drlee@ssu.ac.kr

We have determined the critical surface density of the CuI buffer layer inserted to change the preferred orientation of copper phthalocyanine (CuPc) crystals grown on the buffer layer. X-ray reflectivity measurements were performed to obtain the density profiles of the buffer layers and out-of-plane and 2D grazing-incidence X-ray diffraction measurements were performed to determine the preferred orientations of the molecular crystals. Remarkably, it was found that the preferred orientation of the CuPc film is completely changed from edge-on (1 0 0) to face-on (1 1 −2) by a CuI buffer layer with a very low surface density, so low thatmore » a large proportion of the substrate surface is bare.« less

Switchable wavelength-selective and diffuse metamaterial absorber/emitter with a phase transition spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hao; Yang, Yue; Wang, Liping, E-mail: liping.wang@asu.edu

2014-08-18

We numerically demonstrate a switchable metamaterial absorber/emitter by thermally turning on or off the excitation of magnetic resonance upon the phase transition of vanadium dioxide (VO{sub 2}). Perfect absorption peak exists around the wavelength of 5 μm when the excitation of magnetic resonance is supported with the insulating VO{sub 2} spacer layer. The wavelength-selective absorption is switched off when the magnetic resonance is disabled with metallic VO{sub 2} that shorts the top and bottom metallic structures. The resonance wavelength can be tuned with different geometry, and the switchable metamaterial exhibits diffuse behaviors at oblique angles. The results would facilitate the designmore » of switchable metamaterials for active control in energy and sensing applications.« less

Lightweight, self-ballasting photovoltaic roofing assembly

DOEpatents

Dinwoodie, T.L.

1998-05-05

A photovoltaic roofing assembly comprises a roofing membrane (102), a plurality of photovoltaic modules (104, 106, 108) disposed as a layer on top of the roofing membrane (102), and a plurality of pre-formed spacers, pedestals or supports (112, 114, 116, 118, 120, 122) which are respectively disposed below the plurality of photovoltaic modules (104, 106, 108) and integral therewith, or fixed thereto. Spacers (112, 114, 116, 118, 120, 122) are disposed on top of roofing membrane (102). Membrane (102) is supported on conventional roof framing, and attached thereto by conventional methods. In an alternative embodiment, the roofing assembly may have insulation block (322) below the spacers (314, 314', 315, 315'). The geometry of the preformed spacers (112, 114, 116, 118, 120, 122, 314, 314', 315, 315') is such that wind tunnel testing has shown its maximum effectiveness in reducing net forces of wind uplift on the overall assembly. Such construction results in a simple, lightweight, self-ballasting, readily assembled roofing assembly which resists the forces of wind uplift using no roofing penetrations.

Lightweight, self-ballasting photovoltaic roofing assembly

DOEpatents

Dinwoodie, Thomas L.

1998-01-01

A photovoltaic roofing assembly comprises a roofing membrane (102), a plurality of photovoltaic modules (104, 106, 108) disposed as a layer on top of the roofing membrane (102), and a plurality of pre-formed spacers, pedestals or supports (112, 114, 116, 118, 120, 122) which are respectively disposed below the plurality of photovoltaic modules (104, 106, 108) and integral therewith, or fixed thereto. Spacers (112, 114, 116, 118, 120, 122) are disposed on top of roofing membrane (102). Membrane (102) is supported on conventional roof framing, and attached thereto by conventional methods. In an alternative embodiment, the roofing assembly may have insulation block (322) below the spacers (314, 314', 315, 315'). The geometry of the preformed spacers (112, 114, 116, 118, 120, 122, 314, 314', 315, 315') is such that wind tunnel testing has shown its maximum effectiveness in reducing net forces of wind uplift on the overall assembly. Such construction results in a simple, lightweight, self-ballasting, readily assembled roofing assembly which resists the forces of wind uplift using no roofing penetrations.

Lightweight, self-ballasting photovoltaic roofing assembly

DOEpatents

Dinwoodie, Thomas L.

2006-02-28

A photovoltaic roofing assembly comprises a roofing membrane (102), a plurality of photovoltaic modules (104, 106, 108) disposed as a layer on top of the roofing membrane (102), and a plurality of pre-formed spacers, pedestals or supports (112, 114, 116, 118, 120, 122) which are respectively disposed below the plurality of photovoltaic modules (104, 106, 108) and integral therewith, or fixed thereto. Spacers (112, 114, 116, 118, 120, 122) are disposed on top of roofing membrane (102). Membrane (102) is supported on conventional roof framing, and attached thereto by conventional methods. In an alternative embodiment, the roofing assembly may have insulation block (322) below the spacers (314, 314', 315, 315'). The geometry of the pre-formed spacers (112, 114, 116, 118, 120, 122, 314, 314', 315, 315') is such that wind tunnel testing has shown its maximum effectiveness in reducing net forces of wind uplift on the overall assembly. Such construction results in a simple, lightweight, self-ballasting, readily assembled roofing assembly which resists the forces of wind uplift using no roofing penetrations.

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes

PubMed Central

2012-01-01

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer. PMID:23181826

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes.

PubMed

Bae, Yu Jeong; Lee, Nyun Jong; Kim, Tae Hee; Cho, Hyunduck; Lee, Changhee; Fleet, Luke; Hirohata, Atsufumi

2012-11-26

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer.

Organimetallic Fluorescent Complex Polymers For Light Emitting Applications

DOEpatents

Shi, Song Q.; So, Franky

1997-10-28

A fluorescent complex polymer with fluorescent organometallic complexes connected by organic chain spacers is utilized in the fabrication of light emitting devices on a substantially transparent planar substrate by depositing a first conductive layer having p-type conductivity on the planar surface of the substrate, depositing a layer of a hole transporting and electron blocking material on the first conductive layer, depositing a layer of the fluorescent complex polymer on the layer of hole transporting and electron blocking material as an electron transporting emissive layer and depositing a second conductive layer having n-type conductivity on the layer of fluorescent complex polymer.

Direct microscopic observation of forward osmosis membrane fouling.

PubMed

Wang, Yining; Wicaksana, Filicia; Tang, Chuyang Y; Fane, Anthony G

2010-09-15

This study describes the application of a noninvasive direct microscopic observation method for characterizing fouling of a forward osmosis (FO) membrane. The effect of the draw solution concentration, membrane orientation, and feed spacer on FO fouling was systematically investigated in a cross-flow setup using latex particles as model foulant in the feedwater. Higher draw solution (DS) concentrations (and thus increased flux levels) resulted in dramatic increase in the surface coverage by latex particles, suggesting that the critical flux concept might be applicable even for the osmotically driven FO process. Under identical draw solution concentrations, the active-layer-facing-the-feed-solution orientation (AL-FS) experienced significantly less fouling compared to the alternative orientation. This may be explained by the lower water flux in AL-FS, which is consistent with the critical flux concept. The use of a feed spacer not only dramatically enhanced the initial flux of the FO membrane, but also significantly improved the flux stability during FO fouling. Despite such beneficial effects of using the feed spacer, a significant amount of particle accumulation was found near the spacer filament, suggesting further opportunities for improved spacer design. To the best of the authors' knowledge, this is the first direct microscopic observation study on FO fouling.

Dinuclear Cu(II) complexes of isomeric bis-(3-acetylacetonate)benzene ligands: synthesis, structure, and magnetic properties.

PubMed

Rancan, Marzio; Dolmella, Alessandro; Seraglia, Roberta; Orlandi, Simonetta; Quici, Silvio; Sorace, Lorenzo; Gatteschi, Dante; Armelao, Lidia

2012-05-07

Highly versatile coordinating ligands are designed and synthesized with two β-diketonate groups linked at the carbon 3 through a phenyl ring. The rigid aromatic spacer is introduced in the molecules to orient the two acetylacetone units along different angles and coordination vectors. The resulting para, meta, and ortho bis-(3-acetylacetonate)benzene ligands show efficient chelating properties toward Cu(II) ions. In the presence of 2,2'-bipyridine, they promptly react and yield three dimers, 1, 2, and 3, with the bis-acetylacetonate unit in bridging position between two metal centers. X-ray single crystal diffraction shows that the compounds form supramolecular chains in the solid state because of intermolecular interactions. Each of the dinuclear complexes shows a magnetic behavior which is determined by the combination of structural parameters and spin polarization effects. Notably, the para derivative (1) displays a moderate antiferromagnetic coupling (J = -3.3 cm(-1)) along a remarkably long Cu···Cu distance (12.30 Å).

Transient and modulated charge separation at CuInSe2/C60 and CuInSe2/ZnPc hybrid interfaces

NASA Astrophysics Data System (ADS)

von Morzé, Natascha; Dittrich, Thomas; Calvet, Wolfram; Lauermann, Iver; Rusu, Marin

2017-02-01

Spectral dependent charge transfer and exciton dissociation have been investigated at hybrid interfaces between inorganic polycrystalline CuInSe2 (untreated and Na-conditioned) thin films and organic C60 as well as zinc phthalocyanine (ZnPc) layers by transient and modulated surface photovoltage measurements. The stoichiometry and electronic properties of the bare CuInSe2 surface were characterized by photoelectron spectroscopy which revealed a Cu-poor phase with n-type features. After the deposition of the C60 layer, a strong band bending at the CuInSe2 surface was observed. Evidence for dissociation of excitons followed by charge separation was found at the CuInSe2/ZnPc interface. The Cu-poor layer at the CuInSe2 surface was found to be crucial for transient and modulated charge separation at CuInSe2/organic hybrid interfaces.

Magnetic anisotropy and magnetization reversal in Co/Cu multilayers nanowires

NASA Astrophysics Data System (ADS)

Ahmad, Naeem; Chen, J. Y.; Shi, D. W.; Iqbal, Javed; Han, Xiufeng

2012-04-01

The Co/Cu multilayer nanowires fabricated in an array using anodized aluminum oxide (AAO) template by electrodeposition method, have been investigated. It has been observed that the magnetization reversal mode and magnetic anisotropy depend upon the Co and Cu layer thicknesses. Magnetization reversal occurs by curling mode at around Co = 400 nm and Cu = 10 nm, while for Co = 30 nm and Cu = 60 nm, magnetization reversal occurs by nucleation mode. A change of magnetic anisotropy from out of plane to in plane is observed when thickness of Cu layer tCu = 60 nm and that of Co tCo = 30 nm. Magnetic anisotropy is lost when thickness of the Co layer tCo = 400 nm and that of Cu tCu= 10 nm. Magnetic properties have been explained by the competition among shape anisotropy, magnetostatic interactions and magnetocrystalline anisotropy. Magnetic properties can be tuned accordingly depending upon the thickness of the Co and Cu nanodisks.

Metallicity of Ca 2Cu 6P 5 with single and double copper-pnictide layers

DOE PAGES

Li, Li; Parker, David; Chi, Miaofang; ...

2016-02-16

We report thermodynamic and transport properties, and also theoretical calculations, for Cu-based compound Ca 2Cu 6P 5 and compare with CaCu 2-δP 2. Both materials have layers of edge-sharing copper pnictide tetrahedral CuP 4, similar to Fe–As and Fe–Se layers (with FeAs 4, FeSe 4) in the iron-based superconductors. Despite the presence of this similar transition-metal pnictide layer, we find that both Ca 2Cu 6P 5 and CaCu 2-δP 2 have temperature-independent magnetic susceptibility and show metallic behavior with no evidence of either magnetic ordering or superconductivity down to 1.8 K CaCu 2-δP 2 is slightly off-stoichiometric, with δ =more » 0.14. Theoretical calculations suggest that unlike Fe 3d-based magnetic materials with a large density of states (DOS) at the Fermi surface, Cu have comparatively low DOS, with the majority of the 3d spectral weight located well below Fermi level. The room-temperature resistivity value of Ca 2Cu 6P 5 is only 9 μΩ-cm, due to a substantial plasma frequency and an inferred electron-phonon coupling λ of 0.073 (significantly smaller than that of metallic Cu). Also, microscopy result shows that Cu–Cu distance along the c-axis within the double layers can be very short (2.5 Å), even shorter than metallic elemental copper bond (2.56 Å). The value of dρ/dT for CaCu 2-δP 2 at 300 K is approximately three times larger than in Ca 2Cu 6P 5, which suggests the likelihood of stronger electron-phonon coupling. Lastly, this study shows that the details of Cu–P layers and bonding are important for their transport characteristics. In addition, it emphasizes the remarkable character of the DOS of ‘122’ iron-based materials, despite much structural similarities.« less

Theoretical study of magnetic layers of nickel on copper; dead or alive?

NASA Astrophysics Data System (ADS)

Ernst, A.; Lueders, M.; Temmerman, W. M.; Szotek, Z.; van der Laan, G.

2000-07-01

We studied the persistence of magnetism in ultrathin nickel films on copper. Layer-dependent magnetic moments in Ni films on the (001), (110) and (111) surfaces of Cu have been calculated using the Korringa-Kohn-Rostoker Green's function method. The results show that, at temperature T = 0, a single nickel monolayer is ferromagnetic on Cu(001) and Cu(110) but magnetically `dead' on the more closely packed Cu(111) surface. Films of two and more layers of Ni are always ferromagnetic, with the magnetic moment enhanced in the surface layer but strongly reduced in the interface layer. Due to the short screening length, both the effect of the interface and that of the surface are confined to only a few atomic layers.

Stacked multilayers of alternating reduced graphene oxide and carbon nanotubes for planar supercapacitors

NASA Astrophysics Data System (ADS)

Moon, Geon Dae; Joo, Ji Bong; Yin, Yadong

2013-11-01

A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production.A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production. Electronic supplementary information (ESI) available: Experimental details, SEM and TEM images and additional electrochemical data. See DOI: 10.1039/c3nr04339h

A two-dimensional organic–inorganic hybrid compound, poly[(ethylenediamine)tri-μ-oxido-oxidocopper(II)molybdenum(VI)

PubMed Central

Gun, Ozgul; VanDerveer, Don; Emirdag-Eanes, Mehtap

2008-01-01

A new organic–inorganic two-dimensional hybrid compound, [CuMoO4(C2H8N2)], has been hydro­thermally synthesized at 443 K. The unit cell contains layers composed of CuN2O4 octa­hedra and MoO4 tetra­hedra. Corner-sharing MoO4 and CuN2O4 polyhedra form CuMoO4 bimetallic sites that are joined together through O atoms, forming an edge-sharing Cu2Mo2O4 chain along the c axis. The one-dimensional chains are further linked through bridging O atoms that join the Cu and Mo atoms into respective chains along the b axis, thus establishing layers in the bc plane. The ethyl­enediamine ligand is coordinated to the Cu atom through its two N atoms and is oriented perpendicularly to the two-dimensional –Cu—O—Mo– layers. The average distance between adjacent layers, as calculated by consideration of the closest and furthest distances between two layers, is 8.7 Å. The oxidation states of the Mo and Cu atoms of VI and II, respectively, were confirmed by bond-valence sum calculations. PMID:21200997

Simultaneous enhancement of photovoltage and charge transfer in Cu{sub 2}O-based photocathode using buffer and protective layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Changli; Delaunay, Jean-Jacques, E-mail: jean@mech.t.u-tokyo.ac.jp; Hisatomi, Takashi

2016-07-18

Coating n-type buffer and protective layers on Cu{sub 2}O may be an effective means to improve the photoelectrochemical (PEC) water-splitting performance of Cu{sub 2}O-based photocathodes. In this letter, the functions of the buffer layer and protective layer on Cu{sub 2}O are examined. It is found that a Ga{sub 2}O{sub 3} buffer layer can form a buried junction with Cu{sub 2}O, which inhibits Cu{sub 2}O self-reduction as well as increases the photovoltage through a small conduction band offset between the two semiconductors. The introduction of a TiO{sub 2} thin protective layer not only improves the stability of the photocathode but alsomore » enhances the electron transfer from the photocathode surface into the electrolyte, thus resulting in an increase in photocurrent at positive potentials. These results show that the selection of overlayers with appropriate conduction band positions provides an effective strategy for obtaining a high photovoltage and high photocurrent in PEC systems.« less

Formation of two-dimensionally confined superparamagnetic (Mn, Ga)As nanocrystals in high-temperature annealed (Ga, Mn)As/GaAs superlattices.

PubMed

Sadowski, Janusz; Domagala, Jaroslaw Z; Mathieu, Roland; Kovacs, Andras; Dłużewski, Piotr

2013-05-15

The annealing-induced formation of (Mn, Ga)As nanocrystals in (Ga, Mn)As/GaAs superlattices was studied by x-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 Å thick (Ga, Mn)As layers separated by 25, 50 and 100 Å thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 °C), and then annealed at high temperatures of 400, 560 and 630 °C. The high-temperature annealing causes decomposition to a (Ga, Mn)As ternary alloy and the formation of (Mn, Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga, Mn)As layers for the up to 560 °C annealing and diffuse throughout the GaAs spacer layers at 630 °C annealing. The two-dimensionally confined nanocrystals exhibit a superparamagnetic behavior which becomes high-temperature ferromagnetism (~350 K) upon diffusion.

Fabrication of CIS Absorber Layers with Different Thicknesses Using A Non-Vacuum Spray Coating Method

PubMed Central

Diao, Chien-Chen; Kuo, Hsin-Hui; Tzou, Wen-Cheng; Chen, Yen-Lin; Yang, Cheng-Fu

2014-01-01

In this study, a new thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CuInSe2 absorber layers. The spray coating method developed in this study was a non-vacuum process, based on dispersed nano-scale CuInSe2 precursor and could offer a simple, inexpensive, and alternative formation technology for CuInSe2 absorber layers. After spraying on Mo/glass substrates, the CuInSe2 thin films were annealed at 550 °C by changing the annealing time from 5 min to 30 min in a selenization furnace, using N2 as atmosphere. When the CuInSe2 thin films were annealed, without extra Se or H2Se gas used as the compensation source during the annealing process. The aim of this project was to investigate the influence of annealing time on the densification and crystallization of the CuInSe2 absorber layers to optimize the quality for cost effective solar cell production. The thickness of the CuInSe2 absorber layers could be controlled as the volume of used dispersed CuInSe2-isopropyl alcohol solution was controlled. In this work, X-ray diffraction patterns, field emission scanning electron microscopy, and Hall parameter measurements were performed in order to verify the quality of the CuInSe2 absorber layers obtained by the Spray Coating Method. PMID:28788451

H2 gas sensing properties of a ZnO/CuO and ZnO/CuO/Cu2O Heterostructures

NASA Astrophysics Data System (ADS)

Ababii, N.; Postica, V.; Hoppe, M.; Adelung, R.; Lupan, O.; Railean, S.; Pauporté, T.; Viana, B.

2017-03-01

The most important parameters of gas sensors are sensitivity and especially high selectivity to specific chemical species. To improve these parameters we developed sensor structures based on layered semiconducting oxides, namely CuO/Cu2O, CuO:Zn/Cu2O:Zn, NiO/ZnO. In this work, the ZnO/CuxO (where x = 1, 2) bi-layer heterostructure were grown via a simple synthesis from chemical solution (SCS) at relatively low temperatures (< 95 °C), representing a combination of layered n-type and p-type semiconducting oxides which are widely used as sensing material for gas sensors. The main advantages of the developed device structures are given by simplicity of the synthesis and technological cost-efficiency. Structural investigations showed high crystallinity of synthesized layers confirming the presence of zinc oxide nanostructures on the surface of the copper oxide film deposited on glass substrate. Structural changes in morphology of grown nanostructures induced by post-grown thermal annealing were observed by scanning electron microscopy (SEM) investigations, and were studied in detail. The influence of thermal annealing type on the optical properties was also investigated. As an example of practical applications, the ZnO/CuxO bi-layer heterojunctions and ZnO/CuO/Cu2O three-layered structures were integrated into sensor structures and were tested to different types of reducing gases at different operating temperatures (OPT), showing promising results for fabrication of selective gas sensors.

Magnetic behaviour of multisegmented FeCoCu/Cu electrodeposited nanowires

NASA Astrophysics Data System (ADS)

Núñez, A.; Pérez, L.; Abuín, M.; Araujo, J. P.; Proenca, M. P.

2017-04-01

Understanding the magnetic behaviour of multisegmented nanowires (NWs) is a major key for the application of such structures in future devices. In this work, magnetic/non-magnetic arrays of FeCoCu/Cu multilayered NWs electrodeposited in nanoporous alumina templates are studied. Contrarily to most reports on multilayered NWs, the magnetic layer thickness was kept constant (30 nm) and only the non-magnetic layer thickness was changed (0 to 80 nm). This allowed us to tune the interwire and intrawire interactions between the magnetic layers in the NW array creating a three-dimensional (3D) magnetic system without the need to change the template characteristics. Magnetic hysteresis loops, measured with the applied field parallel and perpendicular to the NWs’ long axis, showed the effect of the non-magnetic Cu layer on the overall magnetic properties of the NW arrays. In particular, introducing Cu layers along the magnetic NW axis creates domain wall nucleation sites that facilitate the magnetization reversal of the wires, as seen by the decrease in the parallel coercivity and the reduction of the perpendicular saturation field. By further increasing the Cu layer thickness, the interactions between the magnetic segments, both along the NW axis and of neighbouring NWs, decrease, thus rising again the parallel coercivity and the perpendicular saturation field. This work shows how one can easily tune the parallel and perpendicular magnetic properties of a 3D magnetic layer system by adjusting the non-magnetic layer thickness.

Enhancing the stability of copper chromite catalysts for the selective hydrogenation of furfural using ALD overcoating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Hongbo; Lei, Yu; Kropf, A. Jeremy

2014-08-01

The stability of a gas-phase furfural hydrogenation catalyst (CuCr2O4 center dot CuO) was enhanced by depositing a thin Al2O3 layer using atomic layer deposition (ALD). Based on temperature-programed reduction (TPR) measurements, the reduction temperature of Cu was raised significantly, and the activation energy for furfural reduction was decreased following the ALD treatment. Thinner ALD layers yielded higher furfural hydrogenation activities. X-ray absorption fine structure (XAFS) spectroscopy studies indicated that Cu1+/Cu-0 are the active species for furfural reduction.

Antiparallel pinned NiO spin valve sensor for GMR head application (invited)

NASA Astrophysics Data System (ADS)

Pinarbasi, M.; Metin, S.; Gill, H.; Parker, M.; Gurney, B.; Carey, M.; Tsang, C.

2000-05-01

NiO antiferromagnetic material possesses certain advantages for spin valve applications and has attracted considerable attention. Some of the key advantages are its insulating properties, very high corrosion resistance, less sensitivity to composition, and its low reset temperature. This material, however, has a low blocking temperature which prevents its application to simple spin valve designs. The use of this material in spin valve structures required significant improvements in thermal stability, blocking temperature, and the spin valve design. In the present study, the blocking temperature and the blocking temperature distribution of the NiO films have been improved by depositing the films reactively using ion beam sputtering. A number of improvements in the processing method and deposition system had to be made to allow full NiO spin valve deposition for mass production. Another critical part was the use of antiparallel pinned design in place of the simple design to improve the thermal stability of the NiO spin valves as read elements at disk drive temperatures. The selection of the ferromagnetic pinned layers and the Ru spacer thickness in AP-pinned spin valves has significant impact on the behavior of the devices. These spin valves are all bottom type, NiO/PL1/Ru/PL2/Cu/Co/NiFe/Ta, where the metallic portion of the spin valve is deposited on top of the NiO AF layer. The PL1 and PL2 are ferromagnetic layers comprising NiFe and Co layers. Read elements have been made using these spin valves that delivered areal densities of 12 Gbit/in. These topics and other improvements which resulted in successful use of NiO spin valves as GMR heads in hard disk drives will be discussed.

Electrochemical, Structural and Magnetic Analysis of Electrodeposited CoCu/Cu Multilayers: Influence of Cu Layer Deposition Potential

NASA Astrophysics Data System (ADS)

Tekgül, Atakan; Kockar, Hakan; Kuru, Hilal; Alper, Mürsel; ÜnlÜ, C. Gökhan

2018-03-01

The electrochemical, structural and magnetic properties of CoCu/Cu multilayers electrodeposited at different cathode potentials were investigated from a single bath. The Cu layer deposition potentials were selected as - 0.3, V - 0.4 V, and - 0.5 V with respect to saturated calomel electrode (SCE) while the Co layer deposition potential was constant at - 1.5 V versus SCE. For the electrochemical analysis, the current-time transients were obtained. The amount of noble non-magnetic (Cu) metal materials decreased with the increase of deposition potentials due to anomalous codeposition. Further, current-time transient curves for the Co layer deposition and capacitance were calculated. In the structural analysis, the multilayers were found to be polycrystalline with both Co and Cu layers adopting the face-centered cubic structure. The (111) peak shifts towards higher angle with the increase of the deposition potentials. Also, the lattice parameters of the multilayers decrease from 0.3669 nm to 0.3610 nm with the increase of the deposition potentials from - 0.3 V to - 0.5 V, which corresponds to the bulk values of Cu and Co, respectively. The electrochemical and structural results demonstrate that the amount of Co atoms increased and the Cu atoms decreased in the layers with the increase of deposition potentials due to anomalous codeposition. For magnetic measurements, the saturation magnetizations, M_s obtained from the magnetic curves of the multilayers were obtained as 212 kA/m, 276 kA/m, and 366 kA/m with - 0.3 V, - 0.4 V, and - 0.5 V versus SCE, respectively. It is seen that the M_s values increased with the increase of the deposition potentials confirming the increase of the Co atoms and decrease of the Cu amount. The results of electrochemical and structural analysis show that the deposition potentials of non-magnetic layers plays important role on the amount of magnetic and non-magnetic materials in the layers and thus on the magnetic properties of the multilayers.

Enhanced sensitivity to near-infrared with high fill factor in small molecular organic solar cells

NASA Astrophysics Data System (ADS)

Shim, Hyun-Sub; Kim, Hyo Jung; Kim, Ji Whan; Kim, Sei-Yong; Jeong, Won-Ik; Kim, Tae-Min; Kim, Jang-Joo

2012-09-01

High efficiency near-infrared (NIR) absorbing solar cells based on lead phthalocyanine (PbPc) are reported using copper iodide (CuI) as a templating layer to control the crystal structure of PbPc. Devices with CuI inserted between the ITO and PbPc layers exhibit a two times enhancement of the JSC compared to the case in the absence of the CuI layer. This is due to the increase of crystallinity in the molecules grown on the CuI templating layer, which is investigated via an x-ray diffraction study. Moreover, fill factor is also enhanced to 0.63 from 0.57 due to low series resistance although the additional CuI layer is inserted between the ITO and the PbPc layer. As a result, the corrected power conversion efficiency of 2.5% was obtained, which is the highest one reported up to now among the PbPc based solar cells.

In situ study of heavy ion irradiation response of immiscible Cu/Fe multilayers

DOE PAGES

Chen, Youxing; Li, Nan; Bufford, Daniel Charles; ...

2016-04-09

By providing active defect sinks that capture and annihilate radiation induced defect clusters immiscible metallic multilayers with incoherent interfaces can effectively reduce defect density in ion irradiated metals. Although it is anticipated that defect density within the layers should vary as a function of distance to the layer interface, there is, to date, little in situ TEM evidence to validate this hypothesis. In our study monolithic Cu films and Cu/Fe multilayers with individual layer thickness, h, of 100 and 5 nm were subjected to in situ Cu ion irradiation at room temperature to nominally 1 displacement-per-atom inside a transmission electronmore » microscope. Rapid formation and propagation of defect clusters were observed in monolithic Cu, whereas fewer defects with smaller dimensions were generated in Cu/Fe multilayers with smaller h. Moreover, in situ video shows that the cumulative defect density in Cu/Fe 100 nm multilayers indeed varies, as a function of distance to the layer interfaces, supporting a long postulated hypothesis.« less

Mechanical properties of Cr-Cu coatings produced by electroplating

NASA Astrophysics Data System (ADS)

Riyadi, Tri Widodo Besar; Sarjito, Masyrukan, Riswan, Ricky Ary

2017-06-01

Hard chromium coatings has long been considered as the most used electrodeposited coating in several industrial applications such as in petrochemistry, oil and gas industries. When hard coatings used in fastener components, the sliding contact during fastening operation produces high tensile stresses on the surface which can generate microcracks. For component used in high oxidation and corrosion environment, deep cracks cannot be tolerated. In this work, a laminated structure of Cr-Cu coating was prepared using electroplating on carbon steel substrates. Two baths of chrome and copper electrolyte solutions were prepared to deposit Cr as the first layer and Cu as the second layer. The effect of current voltages on the thickness, hardness and specific wear rate of the Cu layer was investigated. The results show that an increase of the current voltages increased the thickness and hardness of the Cu layer, but reduced the specific wear rate. This study showed that the use of Cu can be a potential candidate as a laminated structure Cr-Cu for chromium plating.

Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer

NASA Astrophysics Data System (ADS)

Liu, W. Z.; Xu, H. Y.; Zhang, L. X.; Zhang, C.; Ma, J. G.; Wang, J. N.; Liu, Y. C.

2012-10-01

Localized surface plasmon (LSP)-enhanced ultraviolet light-emitting diodes were manufactured by introducing Ag nanoparticles and MgO spacer layer into n-ZnO/i-ZnO/p-GaN heterostructures. By optimizing the MgO thickness, which can suppress the undesired charge transfer and nonradiative Förster resonant energy transfer between Ag and ZnO, a 7-fold electroluminescence enhancement was achieved. Time-resolved and temperature-dependent photoluminescence measurements reveal that both spontaneous emission rate and internal quantum efficiency are increased as a result of coupling between ZnO excitons and Ag LSPs, and simple calculations, based on experimental data, also indicate that most of LSP's energy can be converted into the photon energy.

Multi-material poly(lactic acid) scaffold fabricated via fused deposition modeling and direct hydroxyapatite injection as spacers in laminoplasty

NASA Astrophysics Data System (ADS)

Syuhada, Ghifari; Ramahdita, Ghiska; Rahyussalim, A. J.; Whulanza, Yudan

2018-02-01

Nowadays, additive manufacturing method has been used extensively to realize any product with specific attributes rather than the conventional subtractive manufacturing method. For instance, the additive manufacturing has enable us to construct a product layer-by-layer by successively depositing several materials in one session and one platform. This paper studied the properties of a 3D printed scaffold fabricated through Poly(Lactic-acid) (PLA) deposition modelling in combination with injectable hydroxyapatite (HA)/alginate as cell carrier. The scaffold was designed to serve as a spacer in cervical laminoplasty. Therefore, a series of test were conducted to elaborate the mechanical property, porosity and in-vitro toxicity testing. The results showed that the method is reliable to fabricate the scaffold as desired although the toxicity test needs more confirmation.

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only controlmore » samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and η = 13.0%.« less

The concept of mixed organic ligands in metal-organic frameworks: design, tuning and functions.

PubMed

Yin, Zheng; Zhou, Yan-Ling; Zeng, Ming-Hua; Kurmoo, Mohamedally

2015-03-28

The research on metal-organic frameworks (MOFs) has been developing at an extraordinary pace in its two decades of existence, as judged by the exponential growth of novel structures and the constant expansion of its applicability and research scope. A major part of the research and its success are due to the vital role of the concept of mixed organic ligands in the design, tuning and functions. This perspective, therefore, reviews the recent advances in MOFs based on this concept, which is generally based on employing a small polydentate ligand (here labelled as "nodal ligand") to form either clusters, rods or layers, which are then connected by a second ditopic linker ligand to form the framework. The structures of the materials can be grouped into the following three categories: layer-spacer (usually known as pillared-layer), rod-spacer, and cluster-spacer based MOFs. Depending on the size and geometry of the spacer ligands, interpenetrations of frameworks are occasionally found. These MOFs show a wide range of properties such as (a) crystal-to-crystal transformations upon solvent modifications, post-synthetic metal exchange or ligand reactions, (b) gas sorption, solvent selectivity and purification, (c) specific catalysis, (d) optical properties including colour change, luminescence, non-linear optic, (e) short- and long range magnetic ordering, metamagnetism and reversible ground-state modifications and (f) drug and iodine carriers with controlled release. In the following, we will highlight the importance of the above concept in the design, tuning, and functions of a selection of existing MOFs having mixed organic ligands and their associated structures and properties. The results obtained so far using this concept look very promising for fine-tuning the pore size and shape for selective adsorption and specificity in catalytic reactions, which appears to be one way to propel the advances in the application and commercialization of MOFs.

Enormous excitonic effects in bulk, mono- and bi- layers of cuprous halides using many-body perturbation technique

NASA Astrophysics Data System (ADS)

Azhikodan, Dilna; Nautiyal, Tashi

2017-10-01

Cuprous halides (CuX with X = Cl, Br, I), intensely studied about four decades ago by experimentalists for excitons, are again drawing attention of researchers recently. Potential of cuprous halide systems for device applications has not yet been fully explored. We go beyond the one-particle picture to capture the two-particle physics (electron-hole interaction to form excitons). We have deployed the full tool kit of many-body perturbation technique, GW approximation + Bethe Salpeter equation, to unfurl the rich excitonic physics of the bulk as well as layers of CuX. The negative spin-orbit contribution at the valence band top in CuCl, compared to CuBr and CuI, is in good agreement with experiments. We note that CuX have exceptionally strong excitons, defying the linear fit (between the excitonic binding energy and band gap) encompassing many semiconductors. The mono- and bi- layers of cuprous halides are predicted to be rich in excitons, with exceptionally large binding energies and the resonance energies in UV/visible region. Hence this work projects CuX layers as good candidates for optoelectronic applications. With advancement of technology, we look forward to experimental realization of CuX layers and harnessing of their rich excitonic potential.

Numerical analysis and optimization of Cu2O/TiO2, CuO/TiO2, heterojunction solar cells using SCAPS

NASA Astrophysics Data System (ADS)

Sawicka-Chudy, Paulina; Sibiński, Maciej; Wisz, Grzegorz; Rybak-Wilusz, Elżbieta; Cholewa, Marian

2018-05-01

In the presented work, the Cu2O/TiO2 and CuO/TiO2 heterojunction solar cells have been analyzed by the help of Solar Cell Capacitance Simulator (SCAPS). The effects of various layer parameters like thickness and defect density on the cell performance have been studied in details. Numerical analysis showed how the absorber (CuO, Cu2O) and buffer (TiO2) layers thickness influence the short-circuit current density (Jsc) and efficiency (η) of solar cells. Optimized solar cell structures of Cu2O/TiO2 and CuO/TiO2 showed a potential efficiency of ∼9 and ∼23%, respectively, under the AM1.5G spectrum. Additionally, external quantum efficiency (EQE) curves of the CuO/TiO2 and Cu2O/TiO2 solar cells for various layers thickness of TiO2 were calculated and the optical band gap (Eg) for CuO and Cu2O was obtained. Finally, we examined the effects of defect density on the photovoltaic parameters.

Effect of protein adsorption on the corrosion behavior of 70Cu-30Ni alloy in artificial seawater.

PubMed

Torres Bautista, Blanca E; Carvalho, Maria L; Seyeux, Antoine; Zanna, Sandrine; Cristiani, Pierangela; Tribollet, Bernard; Marcus, Philippe; Frateur, Isabelle

2014-06-01

Copper alloys often used in cooling circuits of industrial plants can be affected by biocorrosion induced by biofilm formation. The objective of this work was to study the influence of protein adsorption, which is the first step in biofilm formation, on the electrochemical behavior of 70Cu-30Ni (wt.%) alloy in static artificial seawater and on the chemical composition of oxide layers. For that purpose, electrochemical measurements performed after 1h of immersion were combined to surface analyses. A model is proposed to analyze impedance data. In the presence of bovine serum albumin (BSA, model protein), the anodic charge transfer resistance deduced from EIS data at Ecorr is slightly higher, corresponding to lower corrosion current. Without BSA, two oxidized layers are shown by XPS and ToF-SIMS: an outer layer mainly composed of copper oxide (Cu2O redeposited layer) and an inner layer mainly composed of oxidized nickel, with a global thickness of ~30nm. The presence of BSA leads to a mixed oxide layer (CuO, Cu2O, Ni(OH)2) with a lower thickness (~10nm). Thus, the protein induces a decrease of the dissolution rate at Ecorr and hence a decrease of the amount of redeposited Cu2O and of the oxide layer thickness. © 2013.

Remote catalyzation for direct formation of graphene layers on oxides.

PubMed

Teng, Po-Yuan; Lu, Chun-Chieh; Akiyama-Hasegawa, Kotone; Lin, Yung-Chang; Yeh, Chao-Hui; Suenaga, Kazu; Chiu, Po-Wen

2012-03-14

Direct deposition of high-quality graphene layers on insulating substrates such as SiO(2) paves the way toward the development of graphene-based high-speed electronics. Here, we describe a novel growth technique that enables the direct deposition of graphene layers on SiO(2) with crystalline quality potentially comparable to graphene grown on Cu foils using chemical vapor deposition (CVD). Rather than using Cu foils as substrates, our approach uses them to provide subliming Cu atoms in the CVD process. The prime feature of the proposed technique is remote catalyzation using floating Cu and H atoms for the decomposition of hydrocarbons. This allows for the direct graphitization of carbon radicals on oxide surfaces, forming isolated low-defect graphene layers without the need for postgrowth etching or evaporation of the metal catalyst. The defect density of the resulting graphene layers can be significantly reduced by tuning growth parameters such as the gas ratios, Cu surface areas, and substrate-to-Cu distance. Under optimized conditions, graphene layers with nondiscernible Raman D peaks can be obtained when predeposited graphite flakes are used as seeds for extended growth. © 2012 American Chemical Society

Copper and nickel hexacyanoferrate nanostructures with graphene-coated stainless steel sheets for electrochemical supercapacitors

NASA Astrophysics Data System (ADS)

Wu, Mao-Sung; Lyu, Li-Jyun; Syu, Jhih-Hao

2015-11-01

Copper and nickel hexacyanoferrate (CuHCF and NiHCF) nanostructures featuring three-dimensional open-framework tunnels are prepared using a solution-based coprecipitation process. CuHCF shows superior supercapacitive behavior than the NiHCF, due to the presence of numerous macropores in CuHCF particles for facilitating the transport of electrolyte. Both CuHCF and NiHCF electrodes with stainless steel (SS) substrate tend to lose their electroactivity towards intercalation/deintercalation of hydrated potassium ions owing to the partial corrosion of SS. Formation of a protective and conductive carbon layer in between SS and CuHCF (NiHCF) film is of paramount importance for improving the irreversible loss of electroactivity. Thin and compact graphene (GN) layer without observable holes in its normal plane is the most effective way to suppress the corrosion of SS compared with porous carbon nanotube and activated carbon layers. Specific capacitance of CuHCF electrode with GN layer (CuHCF/GN/SS) reaches 570 F g-1, which is even better than that of CuHCF with Pt substrate (500 F g-1) at 1 A g-1. The CuHCF/GN/SS exhibits high stability with 96% capacitance retention over 1000 cycles, greater than the CuHCF with Pt (75%).

Enhancement in light harvesting ability of photoactive layer P3HT: PCBM using CuO nanoparticles

NASA Astrophysics Data System (ADS)

Tiwari, D. C.; Dwivedi, Shailendra Kumar; Dipak, Pukhrambam; Chandel, Tarun

2018-05-01

In this paper, we have synthesized CuO nanoparticles via precipitation method and incorporated CuO nanoparticles in the P3HT-poly (3-hexyl) thiophene: PCBM-[6, 6]-phenyl-C61-butyric acid methyl ester heterogeneous blend. The ratio of P3HT to CuO in the blend was varied, while maintaining the fixed ratio of PCBM. The UV-visible absorption spectra of P3HT: PCBM photoactive layer containing different weight percentages of CuO nanoparticles showed a clear enhancement in the photo absorption of the active layer. The absorption band starts from 310 nm to 750 nm for P3HT: CuO (NPs):PCBM (0.5:0.5:1). This shows that incorporation of CuO nanoparticles leads to larger absorption band. In addition, the X-ray diffraction (XRD) shows improvement in P3HT crystallinity and the better formation of CuO nanostructures.

Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

NASA Astrophysics Data System (ADS)

Tekgül, Atakan; Alper, Mürsel; Kockar, Hakan

2017-01-01

The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current-time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of -0.3 and -1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices.

Electronic properties and morphology of copper oxide/n-type silicon heterostructures

NASA Astrophysics Data System (ADS)

Lindberg, P. F.; Gorantla, S. M.; Gunnæs, A. E.; Svensson, B. G.; Monakhov, E. V.

2017-08-01

Silicon-based tandem heterojunction solar cells utilizing cuprous oxide (Cu2O) as the top absorber layer show promise for high-efficiency conversion and low production cost. In the present study, single phase Cu2O films have been realized on n-type Si substrates by reactive magnetron sputtering at 400 °C. The obtained Cu2O/Si heterostructures have subsequently been heat treated at temperatures in the 400-700 °C range in Ar flow and extensively characterized by x-ray diffraction (XRD) measurements, transmission electron microscopy (TEM) imaging and electrical techniques. The Cu2O/Si heterojunction exhibits a current rectification of ~5 orders of magnitude between forward and reverse bias voltages. High resolution cross-sectional TEM-images show the presence of a ~2 nm thick interfacial SiO2 layer between Cu2O and the Si substrate. Heat treatments below 550 °C result in gradual improvement of crystallinity, indicated by XRD. At and above 550 °C, partial phase transition to cupric oxide (CuO) occurs followed by a complete transition at 700 °C. No increase or decrease of the SiO2 layer is observed after the heat treatment at 550 °C. Finally, a thin Cu-silicide layer (Cu3Si) emerges below the SiO2 layer upon annealing at 550 °C. This silicide layer influences the lateral current and voltage distributions, as evidenced by an increasing effective area of the heterojunction diodes.

Enhanced spin-torque in double tunnel junctions using a nonmagnetic-metal spacer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, C. H.; Cheng, Y. H.; Ko, C. W.

2015-10-12

This study proposes an enhancement in the spin-transfer torque of a magnetic tunnel junction (MTJ) designed with double-barrier layer structure using a nonmagnetic metal spacer, as a replacement for the ferromagnetic material, which is traditionally used in these double-barrier stacks. Our calculation results show that the spin-transfer torque and charge current density of the proposed double-barrier MTJ can be as much as two orders of magnitude larger than the traditional double-barrier one. In other words, the proposed double-barrier MTJ has a spin-transfer torque that is three orders larger than that of the single-barrier stack. This improvement may be attributed tomore » the quantum-well states that are formed in the nonmagnetic metal spacer and the resonant tunneling mechanism that exists throughout the system.« less

Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Avila, J. R.; Peters, A. W.; Li, Zhanyong

2017-01-01

To grow fIlms of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal– oxide films featuring Cu(I).

Tailoring the nickel nanoparticles anchored on the surface of Fe3O4@SiO2 spheres for nanocatalysis.

PubMed

Ding, Lei; Zhang, Min; Zhang, Yanwei; Yang, Jinbo; Zheng, Jing; Hayat, Tasawar; Alharbi, Njud S; Xu, Jingli

2017-08-25

Herein, we report an efficient and universal strategy for synthesizing a unique triple-shell structured Fe 3 O 4 @SiO 2 @C-Ni hybrid composite. Firstly, the Fe 3 O 4 cores were synthesized by hydrothermal reaction, and sequentially coated with SiO 2 and a thin layer of nickel-ion-doped resin-formaldehyde (RF-Ni 2+ ) using an extended Stöber method. This was followed by carbonization to produce the Fe 3 O 4 @SiO 2 @C-Ni nanocomposites with metallic nickel nanoparticles embedded in an RF-derived thin graphic carbon layer. Interestingly, the thin SiO 2 spacer layer between RF-Ni 2+ and Fe 3 O 4 plays a critical role on adjusting the size and density of the nickel nanoparticles on the surface of Fe 3 O 4 @SiO 2 nanospheres. The detailed tailoring mechanism is explicitly discussed, and it is shown that the iron oxide core can react with the nickel nanoparticles without the SiO 2 spacer layer, and the size and density of the nickel nanoparticles can be effectively controlled when the SiO 2 layer exits. The multifunctional composites exhibit a significantly enhanced catalytic performance in the reduction of 4-nitrophenol (4-NP).

Load responsive multilayer insulation performance testing

NASA Astrophysics Data System (ADS)

Dye, S.; Kopelove, A.; Mills, G. L.

2014-01-01

Cryogenic insulation designed to operate at various pressures from one atmosphere to vacuum, with high thermal performance and light weight, is needed for cryogenically fueled space launch vehicles and aircraft. Multilayer insulation (MLI) performs well in a high vacuum, but the required vacuum shell for use in the atmosphere is heavy. Spray-on foam insulation (SOFI) is often used in these systems because of its light weight, but can have a higher heat flux than desired. We report on the continued development of Load Responsive Multilayer Insulation (LRMLI), an advanced thermal insulation system that uses dynamic beam discrete spacers that provide high thermal performance both in atmosphere and vacuum. LRMLI consists of layers of thermal radiation barriers separated and supported by micromolded polymer spacers. The spacers have low thermal conductance, and self-support a thin, lightweight vacuum shell that provides internal high vacuum in the insulation. The dynamic load responsive spacers compress to support the external load of a vacuum shell in one atmosphere, and decompress under reduced atmospheric pressure for lower heat leak. Structural load testing was performed on the spacers with various configurations. LRMLI was installed on a 400 liter tank and boil off testing with liquid nitrogen performed at various chamber pressures from one atmosphere to high vacuum. Testing was also performed with an MLI blanket on the outside of the LRMLI.

Diffusion induced atomic islands on the surface of Ni/Cu nanolayers

NASA Astrophysics Data System (ADS)

Takáts, Viktor; Csik, Attila; Hakl, József; Vad, Kálmán

2018-05-01

Surface islands formed by grain-boundary diffusion has been studied in Ni/Cu nanolayers by in-situ low energy ion scattering spectroscopy, X-ray photoelectron spectroscopy, scanning probe microscopy and ex-situ depth profiling based on ion sputtering. In this paper a new experimental approach of measurement of grain-boundary diffusion coefficients is presented. Appearing time of copper atoms diffused through a few nanometer thick nickel layer has been detected by low energy ion scattering spectroscopy with high sensitivity. The grain-boundary diffusion coefficient can be directly calculated from this appearing time without using segregation factors in calculations. The temperature range of 423-463 K insures the pure C-type diffusion kinetic regime. The most important result is that surface coverage of Ni layer by Cu atoms reaches a maximum during annealing and stays constant if the annealing procedure is continued. Scanning probe microscopy measurements show a Volmer-Weber type layer growth of Cu layer on the Ni surface in the form of Cu atomic islands. Depth distribution of Cu in Ni layer has been determined by depth profile analysis.

Spin-filter spin valves with nano-oxide layers for high density recording heads

NASA Astrophysics Data System (ADS)

Al-Jibouri, Abdul; Hoban, M.; Lu, Z.; Pan, G.

2002-05-01

A new spin-filter spin valve with nano-oxide specular layers with structure of Ta/NiFe/IrMn/CoFe/NOL1/CoFe/Cu/CoFetfl/CutCu/NOL2/Ta was deposited using a Nordiko 9606 physical vapor deposition system. The data clearly show that the magnetoresistive (MR) ratio has been significantly improved for spin valves with thinner free layers. The MR ratio remains larger than 12% even when the CoFe free layer is as thin as 1 nm. An optimized MR ratio of ˜15% was obtained when tfl was about 1.2 nm and tCu about 1.5 nm, and was a result of the balance between the increase in the electron mean free path difference and current shunting through the conducting layer. It is also found that the Cu enhancing layer can improve soft magnetic properties of the CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibited coercivity of ˜3 Oe after annealing in a static magnetic field. This kind of spin valve with a very thin soft CoFe free layer is particularly attractive for ultra high density read head applications.

Development of Cu Clad Cu-Zr Based Metallic Glass and Its Solderability

NASA Astrophysics Data System (ADS)

Terajima, Takeshi; Kimura, Hisamichi; Inoue, Akihisa

Soldering is a candidate technique for joining metallic glasses. It can be processed far below the crystallization temperatures of the various metallic glasses so that there is no possibility of crystallization. However, wettability of Cu-Zr based metallic glass by Pb free solder is poor because a strong surface oxide film interferes direct contact between them. To overcome the problem, Cu thin film clad metallic glass was developed. It was preliminary produced by casting a melt of Cu36Zr48Al8Ag8 pre-alloy into Cu mold cavity, inside which Cu thin film with 2 mm in thickness was set on the wall. Cu36Zr48Al8Ag8 metallic glass, whose surface Cu thin film was welded to, was successfully produced. From the microstructure analyses, it was found that reaction layer was formed at the interface between Cu and Cu36Zr48Al8Ag8 metallic glass, however, there was no oxide in the Cu clad layer. Solderability to the metallic glass was drastically increased. The Cu clad layer played an important role to prevent the formation of surface oxide film and consequently improved the solderability.

Separation of spin Seebeck effect and anomalous Nernst effect in Co/Cu/YIG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Dai; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433; Li, Yufan

2015-05-25

The spin Seebeck effect (SSE) and Anomalous Nernst effect (ANE) have been observed in Co/Cu/YIG (yttrium iron garnet) multi-layer structure, where the ferromagnetic insulator YIG acts as the pure spin injector and the ferromagnetic metal Co layer acts as the spin current detector. With the insertion of 5 nm Cu layer, the two ferromagnetic layers are decoupled, thus allowing unambiguous separation of the SSE and ANE contributions under the same experimental conditions in the same sample.

Separation of spin Seebeck effect and anomalous Nernst effect in Co/Cu/YIG

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Dai; Li, Yufan; Qu, D.

2015-05-25

The spin Seebeck effect (SSE) and Anomalous Nernst effect (ANE) have been observed in Co/Cu/YIG (yttrium iron garnet) multi-layer structure, where the ferromagnetic insulator YIG acts as the pure spin injector and the ferromagnetic metal Co layer acts as the spin current detector. With the insertion of 5 nm Cu layer, the two ferromagnetic layers are decoupled, thus allowing unambiguous separation of the SSE and ANE contributions under the same experimental conditions in the same sample.

Corrosion resistance of monolayer hexagonal boron nitride on copper

PubMed Central

Mahvash, F.; Eissa, S.; Bordjiba, T.; Tavares, A. C.; Szkopek, T.; Siaj, M.

2017-01-01

Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate by one order of magnitude compared to bare Cu, suggesting that this ultrathin layer can be employed as an atomically thin corrosion-inhibition coating. PMID:28191822

Effect of Mn Nanoparticles on Interfacial Intermetallic Compound Growth in Low-Ag Sn-0.3Ag-0.7Cu- xMn Solder Joints

NASA Astrophysics Data System (ADS)

Tang, Y.; Luo, S. M.; Li, G. Y.; Yang, Z.; Chen, R.; Han, Y.; Hou, C. J.

2018-02-01

Interfacial intermetallic compound (IMC) growth between Cu substrates and low-Ag Sn-0.3Ag-0.7Cu- xMn ( x = 0 wt.%, 0.02 wt.%, 0.05 wt.%, 0.1 wt.%, and 0.15 wt.%) (SAC0307- xMn) solders was investigated under different isothermal aging temperatures of 100°C, 150°C, and 190°C. Scanning electron microscopy (SEM) was employed to observe the microstructural evolution of the solder joints and measure the IMC layer thickness. The IMC phases were identified by energy-dispersive x-ray spectroscopy and x-ray diffraction. The results showed that a Cu6Sn5 IMC layer formed in the as-soldered solder joints, while a duplex structure consisting of a Cu6Sn5 IMC layer near the solder matrix and a Cu3Sn IMC layer was observed after isothermal aging. A considerable drop in the IMC layer thickness was observed when 0.1 wt.% Mn nanoparticles were added. Beyond this amount, the thickness of the IMC layer only slightly increases. Adding Mn nanoparticles can increase the activation energy and thus reduce the interdiffusion rates of the Sn and Cu atoms, which suppresses excessive IMC growth. The solder joint containing 0.1 wt.% Mn nanoparticles has the highest activation energy. SEM images revealed that the number of small particles precipitated in the channels between the Cu6Sn5 IMC layers increases with an increasing proportion of Mn nanoparticles. Based on the microstructural evolution of the solder joints, this study revealed that grain boundary pinning is one of the most important mechanisms for IMC growth inhibition when Mn nanoparticles are added.

Field and microcosm experiments to evaluate the effects of agricultural Cu treatment on the density and genetic structure of microbial communities in two different soils.

PubMed

Ranjard, Lionel; Echairi, Abdelwahad; Nowak, Virginie; Lejon, David P H; Nouaïm, Rachida; Chaussod, Rémi

2006-11-01

The effects of Cu amendment on indigenous soil microorganisms were investigated in two soils, a calcareous silty clay (Ep) and a sandy soil (Au), by means of a 1-year field experiment and a two-month microcosm incubation. Cu was added as 'Bordeaux mixture' [CuSO(4), Ca(OH)(2)] at the standard rate used in viticulture (B1=16 kg Cu kg(-1) soil) and at a higher level of contamination (B3=48 kg Cu ha(-1) soil). More extractable Cu was observed in sandy soil (Au) than in silty soil (Ep). Furthermore, total Cu and Cu-EDTA declined with time in Au soil, whereas they remained stable in Ep soil. Quantitative modifications of the microflora were assessed by C-biomass measurements and qualitative modifications were assessed by the characterization of the genetic structure of bacterial and fungal communities from DNA directly extracted from the soil, using B- and F-ARISA (bacterial and fungal automated ribosomal intergenic spacer analysis). In the field study, no significant modifications were observed in C-biomass whereas microcosm incubation showed a decrease in B3 contamination only. ARISA fingerprinting showed slight but significant modifications of bacterial and fungal communities in field and microcosm incubation. These modifications were transient in all cases, suggesting a short-term effect of Cu stress. Microcosm experiments detected the microbial community modifications with greater precision in the short-term, while field experiments showed that the biological effects of Cu contamination may be overcome or hidden by pedo-climatic variations.

A 3D complex containing novel 2D Cu{sup II}-azido layers: Structure, magnetic properties and effects of 'Non-innocent' reagent

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Xue-Miao; Guo, Qian; Zhao, Jiong-Peng, E-mail: horryzhao@yahoo.com

A novel copper-azido coordination polymer, [Cu{sub 2}(N{sub 3}){sub 3}(L)]{sub n} (1, HL=pyrazine-2-carboxylic acid), has been synthesized by hydrothermal reaction with 'Non-innocent' reagent in the aqueous solution. In the reaction system, Cu{sup II} ions are avoided to reduce to Cu{sup I} ions due to the existence of Nd{sup III}. It is found that the complex is a 3D structure based on two double EO azido bridged trimmers and octahedron Cu{sup II} ions, in which the azide ligands take on EO and {mu}{sub 1,1,3} mode to form Cu{sup II}-azido 2D layers, furthermore L ligands pillar 2D layers into an infinite 3D frameworkmore » with the Schlaefli symbol of {l_brace}4;6{sup 2}{r_brace}4{l_brace}4{sup 2};6{sup 12};8{sup 10};10{sup 4}{r_brace}{l_brace}4{sup 2};6{sup 4}{r_brace}. Magnetic studies revealed that the interactions between the Cu{sup II} ions in the trimmer are ferromagnetic for the Cu-N-Cu angle nearly 98 Degree-Sign , while the interactions between the trimmer and octahedron Cu{sup II} ion are antiferromgantic and result in an antiferromagnetic state. - Graphical abstract: A 3D complex containing novel 2D Cu{sup II}-azido layers, [Cu{sub 2}(N{sub 3}){sub 3}(L)]{sub n} (HL=pyrazine-2-carboxylic acid), was synthesized by hydrothermal reaction and exhibit interesting structure and magnetic properties. Highlights: Black-Right-Pointing-Pointer 'Non-innocent' reagents plays a key role in the process of formation of this complex. Black-Right-Pointing-Pointer 2D layer is formed only by Cu{sup II} ions and azido ligands. Black-Right-Pointing-Pointer Pyrazine-2-carboxylate ligands reinforce 2D layers and pillar them into an infinite 3D framework. Black-Right-Pointing-Pointer Magnetic study indicates that alternating FM-AF coupling exists in the complex.« less

Cumulative Effects of Short-Term Polymetal Contamination on Soil Bacterial Community Structure

PubMed Central

Ranjard, L.; Lignier, L.; Chaussod, R.

2006-01-01

In this study we evaluated the short-term effects of copper, cadmium, and mercury, added singly or in combination at different doses, on soil bacterial community structure using the bacterial automated ribosomal intergenic spacer analysis (B-ARISA) fingerprinting technique. Principal-component analysis of B-ARISA profiles allowed us to deduce the following order of impact: (Cu + Cd + Hg) >> Hg ≥ Cd > Cu. These results demonstrated that there was a cumulative effect of metal toxicity. Furthermore, the trend of modifications was consistent with the “hump-backed” relationships between biological diversity and disturbance described by Giller et al. (K. E. Giller, E. Witler, and S. P. McGrath, Soil Biol. Biochem. 30:1389-1414, 1998). PMID:16461728

Crystal structure and magnetism of layered perovskites compound EuBaCuFeO5

NASA Astrophysics Data System (ADS)

Lal, Surender; Mukherjee, K.; Yadav, C. S.

2018-04-01

Layered perovskite compounds have interesting multiferroic properties.YBaCuFeO5 is one of the layered perovskite compounds which have magnetic and dielectric transition above 200 K. The multiferroic properties can be tuned with the replacement of Y with some other rare earth ions. In this manuscript, structural and magnetic properties of layered perovskite compound EuBaCuFeO5 have been investigated. This compound crystallizes in the tetragonal structure with P4mm space group and is iso-structural with YBaCuFeO5. The magnetic transition has been found to shift to 120 K as compared to YBaCuFeO5 which has the transition at 200 K. This shift in the magnetic transition has been ascribed to the decrease in the chemical pressure that relaxes the magnetic moments.

Characterization of Y-Ba-Cu-O thin films and yttria-stabilized zirconia intermediate layers on metal alloys grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Reade, R. P.; Mao, X. L.; Russo, R. E.

1991-08-01

The use of an intermediate layer is necessary for the growth of YBaCuO thin films on polycrystalline metallic alloys for tape conductor applications. A pulsed laser deposition process to grow controlled-orientation yttria-stabilized zirconia (YSZ) films as intermediate layers on Haynes Alloy No. 230 was developed and characterized. YBaCuO films deposited on these YSZ-coated substrates are primarily c-axis oriented and superconducting as deposited. The best YBaCuO films grow on (001)-oriented YSZ intermediate layers and have Tc (R = 0) = 86.0 K and Jc about 3000 A/sq cm at 77 K.

Optimization of X-ray Absorbers for TES Microcalorimeters

NASA Technical Reports Server (NTRS)

Iyomoto, Naoko; Sadleir, John E.; Figueroa-Feliciano, Enectali; Saab, Tarek; Bandler, Simon; Kilbourne, Caroline; Chervenak, James; Talley, Dorothy; Finkbeiner, Fred; Brekosky, Regis

2004-01-01

We have investigated the thermal, electrical, and structural properties of Bi and BiCu films that are being developed as X-ray absorbers for transition-edge sensor (TES) microcalorimeter arrays for imaging X-ray spectroscopy. Bi could be an ideal material for an X-ray absorber due to its high X-ray stopping power and low heat capacity, but it has a low thermal conductivity, which can result in position dependence of the pulses in the absorber. In order to improve the thermal conductivity, we added Cu layers in between the Bi layers. We measured electrical and thermal conductivities of the films around 0.1 K(sub 1) the operating temperature of the TES calorimeter, to examine the films and to determine the optimal thickness of the Cu layer. From the electrical conductivity measurements, we found that the Cu is more resistive on the Bi than on a Si substrate. Together with an SEM picture of the Bi surface, we concluded that the rough surface of the Bi film makes the Cu layer resistive when the Cu layer is not thick enough t o fill in the roughness. From the thermal conductivity measurements, we determined the thermal diffusion constant to be 2 x l0(exp 3) micrometers squared per microsecond in a film that consists of 2.25 micrometers of Bi and 0.1 micrometers of Cu. We measured the position dependence in the film and found that its thermal diffusion constant is too low to get good energy resolution, because of the resistive Cu layer and/or possibly a very high heat capacity of our Bi films. We show plans to improve the thermal diffusion constant in our BiCu absorbers.

Wsbnd Cu functionally graded material: Low temperature fabrication and mechanical characterization

NASA Astrophysics Data System (ADS)

Yusefi, Ali; Parvin, Nader; Mohammadi, Hossein

2018-04-01

In this study, we fabricated and characterized a Wsbnd Cu functionally graded material (FGM) with 11 layers, including a pure copper layer. Samples were prepared by mixing a mechanically alloyed Nisbnd Mnsbnd Cu powder with W and Cu powders, stacking the powders, pressing the stacked layers, and finally sintering at 1000 °C. The utilization of a Nisbnd Mnsbnd Cu system may reduce the cost but without losing the good sintering behavior and physical and mechanical properties. The composition of the material was analyzed based on scanning electron microscopy images and by energy dispersive X-ray spectroscopy mapping, which indicated that in the presence of Ni and Mn, the Cu atoms could diffuse into the W particles. All of the layers had a very high relative density, thereby indicating their densification and excellent sintering behavior. We also found that the porosity values in the Cu phase remained unchanged at approximately 2.39% across the FGM. Mechanical measurements showed that the hardness (72%), modulus of elasticity (61%), and ultimate tensile strength (58%) increased with the W content across the Wsbnd Cu FGM, whereas the fracture toughness (KIC) varied in the opposite manner (minimum of 4.52 MPa/m0.5).

Self-assembled monolayer structures of hexadecylamine on Cu surfaces: density-functional theory.

PubMed

Liu, Shih-Hsien; Balankura, Tonnam; Fichthorn, Kristen A

2016-12-07

We used dispersion-corrected density-functional theory to probe possible structures for adsorbed layers of hexadecylamine (HDA) on Cu(100) and Cu(111). HDA forms self-assembled layers on these surfaces, analogous to alkanethiols on various metal surfaces, and it binds by donating electrons in the amine group to the Cu surface atoms, consistent with experiment. van der Waals interactions between the alkyl tails of HDA molecules are stronger than the interaction between the amine group and the Cu surfaces. Strong HDA-tail interactions lead to coverage-dependent tilting of the HDA layers, such that the tilt angle is larger for lower coverages. At full monolayer coverage, the energetically preferred binding configuration for HDA on Cu(100) is a (5 × 3) pattern - although we cannot rule out incommensurate structures - while the pattern is preferred on Cu(111). A major motivation for this study is to understand the experimentally observed capability of HDA as a capping agent for producing {100}-faceted Cu nanocrystals. Consistent with experiment, we find that HDA binds more strongly to Cu(100) than to Cu(111). This strong binding stems from the capability of HDA to form more densely packed layers on Cu(100), which leads to stronger HDA-tail interactions, as well as the stronger binding of the amine group to Cu(100). We estimate the surface energies of HDA-covered Cu(100) and Cu(111) surfaces and find that these surfaces are nearly isoenergetic. By drawing analogies to previous theoretical work, it seems likely that HDA-covered Cu nanocrystals could have kinetic shapes that primarily express {100} facets, as is seen experimentally.

Fundamental Design based on Current Distribution in Coaxial Multi-Layer Cable-in-Conduit Conductor

NASA Astrophysics Data System (ADS)

Hamajima, Takataro; Tsuda, Makoto; Yagai, Tsuyoshi; Takahata, Kazuya; Imagawa, Shinsaku

An imbalanced current distribution is often observed in cable-in-conduit (CIC) superconductors which are composed of multi-staged, triplet type sub-cables, and hence deteriorates the performance of the coils. Therefore, since it is very important to obtain a homogeneous current distribution in the superconducting strands, we propose a coaxial multi-layer type CIC conductor. We use a circuit model for all layers in the coaxial multi-layer CIC conductor, and derive a generalized formula governing the current distribution as explicit functions of the superconductor construction parameters, such as twist pitch, twist direction, radius of each layer, and number of superconducting (SC) strands and copper (Cu) strands. We apply the formula to design the coaxial multi-layer CIC which has the same number of SC strands and Cu strands of the CIC for Central Solenoid of ITER. We can design three kinds of the coaxial multi-layer CIC depending on distribution of SC and Cu strands on all layers. It is shown that the SC strand volume should be optimized as a function of SC and Cu strand distribution on the layers.

Cuprous Oxide as a Potential Low-Cost Hole-Transport Material for Stable Perovskite Solar Cells.

PubMed

Nejand, Bahram Abdollahi; Ahmadi, Vahid; Gharibzadeh, Saba; Shahverdi, Hamid Reza

2016-02-08

Inorganic hole-transport materials are commercially desired to decrease the fabrication cost of perovskite solar cells. Here, Cu2O is introduced as a potential hole-transport material for stable, low-cost devices. Considering that Cu2O formation is highly sensitive to the underlying mixture of perovskite precursors and their solvents, we proposed and engineered a technique for reactive magnetron sputtering. The rotational angular deposition of Cu2O yields high surface coverage of the perovskite layer for high rate of charge extraction. Deposition of this Cu2O layer on the pinhole-free perovskite layer produces devices with power conversion efficiency values of up to 8.93%. The engineered Cu2O layers showed uniform, compact, and crack-free surfaces on the perovskite layer without affecting the perovskite structure, which is desired for deposition of the top metal contact and for surface shielding against moisture and mechanical damages. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of oxide insertion layer on resistance switching properties of copper phthalocyanine

NASA Astrophysics Data System (ADS)

Joshi, Nikhil G.; Pandya, Nirav C.; Joshi, U. S.

2013-02-01

Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalocyanine (CuPc) film sandwiched between aluminum (Al) electrodes. Pronounced hysteresis in the I-V curves revealed a resistance switching with on-off ratio of the order of 85%. In order to control the charge injection in the CuPc, nanoscale indium oxide buffer layer was inserted to form Al/CuPc/In2O3/Al device. Analysis of I-V measurements revealed space charge limited switching conduction at the Al/CuPc interface. The traps in the organic layer and charge blocking by oxide insertion layer have been used to explain the absence of resistance switching in the oxide buffer layered memory device cell. Present study offer potential applications for CuPc organic semiconductor in low power non volatile resistive switching memory and logic circuits.

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.; Todorov, Teodor; Mitzi, David B.; Guha, Supratik

2011-01-01

We have carried out detailed microstructural studies of phase separation and grain boundary composition in Cu2ZnSnS4 based solar cells. The absorber layer was fabricated by thermal evaporation followed by post high temperature annealing on hot plate. We show that inter-reactions between the bottom molybdenum and the Cu2ZnSnS4, besides triggering the formation of interfacial MoSx, results in the out-diffusion of Cu from the Cu2ZnSnS4 layer. Phase separation of Cu2ZnSnS4 into ZnS and a Cu-Sn-S compound is observed at the molybdenum-Cu2ZnSnS4 interface, perhaps as a result of the compositional out-diffusion. Additionally, grain boundaries within the thermally evaporated absorber layer are found to be either Cu-rich or at the expected bulk composition. Such interfacial compound formation and grain boundary chemistry likely contributes to the lower than expected open circuit voltages observed for the Cu2ZnSnS4 devices.

Effects of Additives on Electrochemical Growth of Cu Film on Co/SiO2/Si Substrate by Alternating Underpotential Deposition of Pb and Surface-Limited Redox Replacement by Cu

NASA Astrophysics Data System (ADS)

Fang, J. S.; Lin, L. Y.; Wu, C. L.; Cheng, Y. L.; Chen, G. S.

2017-11-01

The effects of additives to an acidic electrolyte for electrochemical deposition of copper film to prevent corrosion of the Co/SiO2/Si substrate have been investigated. A sacrificial Pb layer was formed by underpotential deposition (UPD), then a Cu layer was prepared using surface-limited redox replacement (SLRR) to exchange the UPD-Pb layer in an acidic copper electrolyte with trisodium citrate, sodium perchlorate, and ethylenediamine as additives. The additives significantly affected the replacement of UPD-Pb by Cu and prevented galvanic corrosion of the Co/SiO2/Si substrate in the acidic Cu electrolyte. The results showed that both sodium perchlorate and ethylenediamine reduced the corrosion of the Co substrate and resulted in Cu film with low electrical resistivity. However, residual Pb was present in the Cu film when using trisodium citrate, as the citrate ions slowed copper displacement. The proposed sequential UPD-Pb and SLRR-Cu growth method may enable electrochemical deposition for fabrication of Cu interconnects on Co substrate from acidic Cu electrolyte.

Study of Electromigration-Induced Failures on Cu Pillar Bumps Joined to OSP and ENEPIG Substrates

NASA Astrophysics Data System (ADS)

Hsiao, Yu-Hsiang; Lin, Kwang-Lung; Lee, Chiu-Wen; Shao, Yu-Hsiu; Lai, Yi-Shao

2012-12-01

This work studies electromigration (EM)-induced failures on Cu pillar bumps joined to organic solderability preservative (OSP) on Cu substrates (OSP-bumps) and electroless Ni(P)/electroless Pd/immersion Au (ENEPIG) under bump metallurgy (UBM) on Cu substrates (ENEPIG-bumps). Two failure modes (Cu pad consumption and gap formation) were found with OSP-bumps, but only one failure mode (gap formation) was found with ENEPIG-bumps. The main interfacial compound layer was the Cu6Sn5 compound, which suffered significant EM-induced dissolution, eventually resulting in severe Cu pad consumption at the cathode side for OSP-bumps. A (Cu,Ni)6Sn5 layer with strong resistance to EM-induced dissolution exists at the joint interface when a nickel barrier layer is incorporated at the cathode side (Ni or ENEPIG), and these imbalanced atomic fluxes result in the voids and gap formation. OSP-bumps showed better lifetime results than ENEPIG-bumps for several current stressing conditions. The inverse Cu atomic flux ( J Cu,chem) which diffuses from the Cu pad to cathode side retards the formation of voids. The driving force for J Cu,chem comes from the difference in chemical potential between the (Cu,Ni)6Sn5 and Cu6Sn5 phases.

Skin-Inspired Hierarchical Polymer Architectures with Gradient Stiffness for Spacer-Free, Ultrathin, and Highly Sensitive Triboelectric Sensors.

PubMed

Ha, Minjeong; Lim, Seongdong; Cho, Soowon; Lee, Youngoh; Na, Sangyun; Baig, Chunggi; Ko, Hyunhyub

2018-04-24

The gradient stiffness between stiff epidermis and soft dermis with interlocked microridge structures in human skin induces effective stress transmission to underlying mechanoreceptors for enhanced tactile sensing. Inspired by skin structure and function, we fabricate hierarchical nanoporous and interlocked microridge structured polymers with gradient stiffness for spacer-free, ultrathin, and highly sensitive triboelectric sensors (TESs). The skin-inspired hierarchical polymers with gradient elastic modulus enhance the compressibility and contact areal differences due to effective transmission of the external stress from stiff to soft layers, resulting in highly sensitive TESs capable of detecting human vital signs and voice. In addition, the microridges in the interlocked polymers provide an effective variation of gap distance between interlocked layers without using the bulk spacer and thus facilitate the ultrathin and flexible design of TESs that could be worn on the body and detect a variety of pressing, bending, and twisting motions even in humid and underwater environments. Our TESs exhibit the highest power density (46.7 μW/cm 2 ), pressure (0.55 V/kPa), and bending (∼0.1 V/°) sensitivities ever reported on flexible TESs. The proposed design of hierarchical polymer architectures for the flexible and wearable TESs can find numerous applications in next-generation wearable electronics.

Effects of post-reflow cooling rate and thermal aging on growth behavior of interfacial intermetallic compound between SAC305 solder and Cu substrate

NASA Astrophysics Data System (ADS)

Hu, Xiaowu; Xu, Tao; Jiang, Xiongxin; Li, Yulong; Liu, Yi; Min, Zhixian

2016-04-01

The interfacial reactions between Cu and Sn3Ag0.5Cu (SAC305) solder reflowed under various cooling rates were investigated. It is found that the cooling rate is an important parameter in solder reflow process because it influences not only microstructure of solder alloy but also the morphology and growth of intermetallic compounds (IMCs) formed between solder and Cu substrate. The experimental results indicate that only scallop-like Cu6Sn5 IMC layer is observed between solder and Cu substrate in case of water cooling and air cooling, while bilayer composed of scallop-like Cu6Sn5 and thin layer-like Cu3Sn is detected under furnace cooling due to sufficient reaction time to form Cu3Sn between Cu6Sn5 IMC and Cu substrate which resulted from slow cooling rate. Samples with different reflow cooling rates were further thermal-aged at 423 K. And it is found that the thickness of IMC increases linearly with square root of aging time. The growth constants of interfacial IMC layer during aging were obtained and compared for different cooling rates, indicating that the IMC layer thickness increased faster in samples under low cooling rate than in the high cooling rate under the same aging condition. The long prismatic grains were formed on the existing interfacial Cu6Sn5 grains to extrude deeply into solder matrix with lower cooling rate and long-term aging, and the Cu6Sn5 grains coarsened linearly with cubic root of aging time.

A novel nonenzymatic amperometric hydrogen peroxide sensor based on CuO@Cu2O nanowires embedded into poly(vinyl alcohol).

PubMed

Chirizzi, Daniela; Guascito, Maria Rachele; Filippo, Emanuela; Tepore, Antonio

2016-01-15

A new, very simple, rapid and inexpensive nonenzymatic amperometric sensor for hydrogen peroxide (H2O2) detection is proposed. It is based on the immobilization of cupric/cuprous oxide core shell nanowires (CuO@Cu2O-NWs) in a poly(vinyl alcohol) (PVA) matrix directly drop casted on a glassy carbon electrode surface to make a CuO@Cu2O core shell like NWs PVA embedded (CuO@Cu2O-NWs/PVA) sensor. CuO nanowires with mean diameters of 120-170nm and length in the range 2-5μm were grown by a simple catalyst-free thermal oxidation process based on resistive heating of pure copper wires at ambient conditions. The oxidation process of the copper wire surface led to the formation of a three layered structure: a thick Cu2O bottom layer, a CuO thin intermediate layer and CuO nanowires. CuO nanowires were carefully scratched from Cu2O layer with a sharp knife, dispersed into ethanol and sonicated. Then, the NWs were embedded in PVA matrix. The morphological and spectroscopic characterization of synthesized CuO-NWs and CuO@Cu2O-NWs/PVA were performed by transmission electron microscopy (TEM), selected area diffraction pattern (SAD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analysis. Moreover a complete electrochemical characterization of these new CuO@Cu2O-NWs/PVA modified glassy carbon electrodes was performed by Cyclic Voltammetry (CV) and Cronoamperometry (CA) in phosphate buffer (pH=7; I=0.2) to investigate the sensing properties of this material against H2O2. The electrochemical performances of proposed sensors as high sensitivity, fast response, reproducibility and selectivity make them suitable for the quantitative determination of hydrogen peroxide substrate in batch analysis. Copyright © 2015 Elsevier B.V. All rights reserved.

Interfacial reaction and microstructure between the Sn3Ag0.5Cu solder and Cu-Co dual-phase substrate

NASA Astrophysics Data System (ADS)

Li, Chao; Hu, Xiaowu; Jiang, Xiongxin; Li, Yulong

2018-07-01

In this study, interfacial reactions and microstructures of the Sn3Ag0.5Cu (SAC305)/Cu- xCo ( x = 0, 30 and 50 wt%) systems were investigated during reflowing at 290 °C and solid-state aging at 150 °C for various time. The effects of different contents of Co in substrate on interfacial reaction in SAC305/Cu- xCo system were discussed. It was found that the addition of Co into pure copper substrate to achieve alloying would effectively inhibit the growth of IMC layers. Comparison among the thickness of the intermetallic compound (IMC) in three kinds of SAC305/Cu-Co systems indicated that the IMC layer of SAC305/Cu joint was thicker than that of the other two types of solder joints. The composition of the SAC305/Cu IMC layers was Cu6Sn5 and Cu3Sn. Three kinds of reaction phases (Cu,Co)6Sn5, (Cu,Co)Sn2 and (Cu,Co)3Sn were found at the interfaces of the SAC305/Cu-30Co and SAC305/Cu-50Co joints. Remarkably the (Cu,Co)Sn2 phase was found adjacent to the Co-rich phase after soldering and eliminated after the aging treatment. While the (Cu,Co)3Sn phase accumulated increasingly adjacent to the substrate with the increased aging time. The results suggested that the Co content increased from 30 to 50 wt% in substrate lead to significant restraint of the growth of interfacial IMC. In addition, the thickness of the interfacial IMC layer was linear with the square root of the aging time during the aging process. The reaction rate between Sn atoms in solder and Cu, Co atoms in substrate was quite different, which lead to the fact that the interface of SAC305/Cu-Co is uneven on the side of substrate after reflowing and aging.

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc ismore » a promising HIL material for highly efficient OLEDs.« less

Interactions between C and Cu atoms in single-layer graphene: direct observation and modelling.

PubMed

Kano, Emi; Hashimoto, Ayako; Kaneko, Tomoaki; Tajima, Nobuo; Ohno, Takahisa; Takeguchi, Masaki

2016-01-07

Metal doping into the graphene lattice has been studied recently to develop novel nanoelectronic devices and to gain an understanding of the catalytic activities of metals in nanocarbon structures. Here we report the direct observation of interactions between Cu atoms and single-layer graphene by transmission electron microscopy. We document stable configurations of Cu atoms in the graphene sheet and unique transformations of graphene promoted by Cu atoms. First-principles calculations based on density functional theory reveal a reduction of energy barrier that caused rotation of C-C bonds near Cu atoms. We discuss two driving forces, electron irradiation and in situ heating, and conclude that the observed transformations were mainly promoted by electron irradiation. Our results suggest that individual Cu atoms can promote reconstruction of single-layer graphene.

Study of Cu2O\\ZnO nanowires heterojunction designed by combining electrodeposition and atomic layer deposition

NASA Astrophysics Data System (ADS)

Makhlouf, Houssin; Weber, Matthieu; Messaoudi, Olfa; Tingry, Sophie; Moret, Matthieu; Briot, Olivier; Chtoutou, Radhouane; Bechelany, Mikhael

2017-12-01

Cu2O/ZnO nanowires (NWs) heterojunctions were successfully prepared by combining Atomic layer Deposition (ALD) and Electrochemical Deposition (ECD) processes. The crystallinity, morphology and photoconductivity properties of the Cu2O/ZnO nanostructures have been investigated. The properties of the Cu2O absorber layer and the nanostructured heterojunction were studied in order to understand the mechanisms lying behind the low photoconductivity measured. It has been found that the interface state defects and the high resistivity of Cu2O film were limiting the photovoltaic properties of the prepared devices. The understanding presented in this work is expected to enable the optimization of solar cell devices based on Cu2O/ZnO nanomaterials and improve their overall performance.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

Ultimately short ballistic vertical graphene Josephson junctions

PubMed Central

Lee, Gil-Ho; Kim, Sol; Jhi, Seung-Hoon; Lee, Hu-Jong

2015-01-01

Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a cleaved graphene monoatomic layer as the normal-conducting spacer between superconducting electrodes. The atomically thin single-crystalline graphene layer serves as an ultimately short conducting channel, with highly transparent interfaces with superconductors. In particular, we show the strong Josephson coupling reaching the theoretical limit, the convex-shaped temperature dependence of the Josephson critical current and the exceptionally skewed phase dependence of the Josephson current; all demonstrate the bona fide short and ballistic Josephson nature. This vertical stacking scheme for extremely thin transparent spacers would open a new pathway for exploring the exotic coherence phenomena occurring on an atomic scale. PMID:25635386

Efficient CH3NH3PbI3 perovskite/fullerene planar heterojunction hybrid solar cells with oxidized Ni/Au/Cu transparent electrode

NASA Astrophysics Data System (ADS)

Lai, Wei-Chih; Lin, Kun-Wei; Guo, Tzung-Fang; Chen, Peter; Liao, Yuan-Yu

2018-02-01

We demonstrated the performance of inverted CH3NH3PbI3 perovskite-based solar cells (SCs) with a thermally oxidized nickel/gold/copper (Ni/Au/Cu) trilayer transparent electrode. Oxidized Ni/Au/Cu is a high transparent layer and has less resistance than the oxidized Ni/Au layer. Like the oxidized Ni/Au layer, oxidized Ni and Cu in oxidized Ni/Au/Cu could perform as a hole transport layer of the perovskite-based SCs. It leads to improved perovskite SC performance on an open circuit voltage of 1.01 V, a short circuit current density of 14.36 mA/cm2, a fill factor of 76.7%, and a power conversion efficiency (η%) of 11.1%. The η% of perovskite SCs with oxidized Ni (10 nm)/Au (6 nm)/Cu (1 nm) improved by approximately 10% compared with that of perovskite SCs with oxidized Ni/Au.

Microstructures and Properties of 40Cu/Ag(Invar) Composites Fabricated by Powder Metallurgy and Subsequent Thermo-Mechanical Treatment

NASA Astrophysics Data System (ADS)

Zhang, Xin; Huang, Yingqiu; Liu, Xiangyu; Yang, Lei; Shi, Changdong; Wu, Yucheng; Tang, Wenming

2018-03-01

Composites of 40Cu/Ag(Invar) were prepared via pressureless sintering and subsequent thermo-mechanical treatment from raw materials of electroless Ag-plated Invar alloy powder and electrolytic Cu powder. Microstructures and properties of the prepared composites were studied to evaluate the effect of the Ag layer on blocking Cu/Invar interfacial diffusion in the composites. The electroless-plated Ag layer was dense, uniform, continuous, and bonded tightly with the Invar alloy substrate. During sintering of the composites, the Ag layer effectively prevented Cu/Invar interfacial diffusion. During cold-rolling, the Ag layer was deformed uniformly with the Invar alloy particles. The composites exhibited bi-continuous network structure and considerably improved properties. After sintering at 775 °C and subsequent thermo-mechanical treatment, the 40Cu/Ag(Invar) composites showed satisfactory comprehensive properties: relative density of 99.0 pct, hardness of HV 253, thermal conductivity of 55.7 W/(m K), and coefficient of thermal expansion of 11.2 × 10-6/K.

Graphene-copper composite with micro-layered grains and ultrahigh strength

PubMed Central

Wang, Lidong; Yang, Ziyue; Cui, Ye; Wei, Bing; Xu, Shichong; Sheng, Jie; Wang, Miao; Zhu, Yunpeng; Fei, Weidong

2017-01-01

Graphene with ultrahigh intrinsic strength and excellent thermal physical properties has the potential to be used as the reinforcement of many kinds of composites. Here, we show that very high tensile strength can be obtained in the copper matrix composite reinforced by reduced graphene oxide (RGO) when micro-layered structure is achieved. RGO-Cu powder with micro-layered structure is fabricated from the reduction of the micro-layered graphene oxide (GO) and Cu(OH)2 composite sheets, and RGO-Cu composites are sintered by spark plasma sintering process. The tensile strength of the 5 vol.% RGO-Cu composite is as high as 608 MPa, which is more than three times higher than that of the Cu matrix. The apparent strengthening efficiency of RGO in the 2.5 vol.% RGO-Cu composite is as high as 110, even higher than that of carbon nanotube, multilayer graphene, carbon nano fiber and RGO in the copper matrix composites produced by conventional MLM method. The excellent tensile and compressive strengths, high hardness and good electrical conductivity are obtained simultaneously in the RGO-Cu composites. The results shown in the present study provide an effective method to design graphene based composites with layered structure and high performance. PMID:28169306

Infrared Brazing of Ti50Ni50 Shape Memory Alloy and Inconel 600 Alloy with Two Ag-Cu-Ti Active Braze Alloys

NASA Astrophysics Data System (ADS)

Shiue, Ren-Kae; Wu, Shyi-Kaan; Yang, Sheng-Hao

2017-02-01

Infrared brazing of Ti50Ni50 SMA and Inconel 600 alloy using Cusil-ABA and Ticusil filler metals has been investigated. The joints were dominated by Ag-Cu eutectic with proeutectic Cu in the Cusil-ABA brazed joint and with proeutectic Ag in the Ticusil one. A continuous curved belt composed of a Ni3Ti layer and a (Cu x Ni1- x )2Ti layer formed in the brazed Ti50Ni50/Ticusil/Inconel 600 joint. On the Ti50Ni50 SMA side, an intermetallic layer of (Cu x Ni1- x )2Ti formed in all joints, with x values around 0.81 and 0.47. Layers of (Cu x Ni1- x )2Ti, Ni3Ti, and mixed Ni3Ti and Ni2Cr intermetallics were observed next to the Inconel 600 substrate in the brazed Ti50Ni50/Cusil-ABA/Inconel 600 joint. The maximum shear strengths of the joints using the Cusil-ABA filler metal and the Ticusil filler metal were 324 and 300 MPa, respectively. In the Cusil-ABA brazed joint, cracks with cleavage-dominated fracture propagated along the (Cu x Ni1- x )2Ti interfacial layer next to the Ti50Ni50 SMA substrate. In the Ticusil brazed joint, ductile dimple fracture occurred in the Ag-rich matrix near the Inconel 600 alloy substrate. The absence of a detrimental Ti-Fe-(Cu) layer on the Inconel 600 substrate side can effectively improve the shear strength of the joint.

Growth of <111>-oriented Cu layer on thin TaWN films

NASA Astrophysics Data System (ADS)

Takeyama, Mayumi B.; Sato, Masaru

2017-07-01

In this study, we examine the growth of a <111>-oriented Cu layer on a thin TaWN ternary alloy barrier for good electromigration reliability. The strongly preferentially oriented Cu(111) layer is observed on a thin TaWN barrier even in the as-deposited Cu (100 nm)/TaWN (5 nm)/Si system. Also, this system tolerates annealing at 700 °C for 1 h without silicide reaction. It is revealed that the TaWN film is one of the excellent barriers with thermal stability and low resistivity. Simultaneously, the TaWN film is a candidate for a superior underlying material to achieve the Cu(111) preferential orientation.

All high Tc edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Foote, M. C.; Bajuk, L. J.

1991-01-01

High quality YBa2Cu3O(7-x) normal-metal/YBa2Cu3O(7-x) edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective mormal metal coherence length of 20 A.

Magnetic transport property of NiFe/WSe2/NiFe spin valve structure

NASA Astrophysics Data System (ADS)

Zhao, Kangkang; Xing, Yanhui; Han, Jun; Feng, Jiafeng; Shi, Wenhua; Zhang, Baoshun; Zeng, Zhongming

2017-06-01

Two-dimensional (2D) materials have been proposed as promising candidate for spintronic applications due to their atomic crystal structure and physical properties. Here, we introduce exfoliated few-layer tungsten diselenide (WSe2) as spacer in a Py/WSe2/Py vertical spin valve. In this junction, the WSe2 spacer exhibits metallic behavior. We observed negative magnetoresistance (MR) with a ratio of -1.1% at 4 K and -0.21% at 300 K. A general phenomenological analysis of the negative MR property is discussed. Our result is anticipated to be beneficial for future spintronic applications.

A comparative study of heterostructured CuO/CuWO4 nanowires and thin films

NASA Astrophysics Data System (ADS)

Polyakov, Boris; Kuzmin, Alexei; Vlassov, Sergei; Butanovs, Edgars; Zideluns, Janis; Butikova, Jelena; Kalendarev, Robert; Zubkins, Martins

2017-12-01

A comparative study of heterostructured CuO/CuWO4 core/shell nanowires and double-layer thin films was performed through X-ray diffraction, confocal micro-Raman spectroscopy and electron (SEM and TEM) microscopies. The heterostructures were produced using a two-step process, starting from a deposition of amorphous WO3 layer on top of CuO nanowires and thin films by reactive DC magnetron sputtering and followed by annealing at 650 °C in air. The second step induced a solid-state reaction between CuO and WO3 oxides through a thermal diffusion process, revealed by SEM-EDX analysis. Morphology evolution of core/shell nanowires and double-layer thin films upon heating was studied by electron (SEM and TEM) microscopies. A formation of CuWO4 phase was confirmed by X-ray diffraction and confocal micro-Raman spectroscopy.

Solar Absorber Cu 2 ZnSnS 4 and its Parent Multilayers ZnS/SnS 2 /Cu 2 S Synthesized by Atomic Layer Deposition and Analyzed by X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baryshev, Sergey V.; Riha, Shannon C.; Zinovev, Alexander V.

2015-06-01

Presented here are results of x-ray photoelectron spectroscopy (XPS) on multilayers of metal-sulfide binaries ZnS, SnS2, and Cu2S grown by atomic layer deposition (ALD) on Si substrates, and of Cu2ZnSnS4 (CZTS) formed upon 450 °C annealing of the parent multilayer ZnS/SnS2/Cu2S. Survey and detailed spectral analysis of the multilayer ZnS/SnS2/Cu2S are presented step-wise, as each layer was sequentially added by ALD. The set of data is finalized with spectra of the resulting alloy CZTS. XPS analyses indicate significant mixing between SnS2 and Cu2S, which favors CZTS formation within the ALD approach.

Interfacial reactions and compound formation of Sn-Ag-Cu solders by mechanical alloying on electroless Ni-P/Cu under bump metallization

NASA Astrophysics Data System (ADS)

Kao, Szu-Tsung; Duh, Jenq-Gong

2005-08-01

Electroless Ni-P under bump metallization (UBM) has been widely used in electronic interconnections due to the good diffusion barrier between Cu and solder. In this study, the mechanical alloying (MA) process was applied to produce the SnAgCu lead-free solder pastes. Solder joints after annealing at 240°C for 15 min were employed to investigate the evolution of interfacial reaction between electroless Ni-P/Cu UBM and SnAgCu solder with various Cu concentrations ranging from 0.2 to 1.0 wt.%. After detailed quantitative analysis with an electron probe microanalyzer, the effect of Cu content on the formation of intermetallic compounds (IMCs) at SnAgCu solder/electroless Ni-P interface was evaluated. When the Cu concentration in the solder was 0.2 wt.%, only one (Ni, Cu)3Sn4 layer was observed at the solder/electroless Ni-P interface. As the Cu content increased to 0.5 wt.%, (Cu, Ni)6Sn5 formed along with (Ni, Cu)3Sn4. However, only one (Cu, Ni)6Sn5 layer was revealed, if the Cu content was up to 1 wt.%. With the aid of microstructure evolution, quantitative analysis, and elemental distribution by x-ray color mapping, the presence of the Ni-Sn-P phase and P-rich layer was evidenced.

Polymer thick-film conductors and dielectrics for membrane switches and flexible circuitry

NASA Technical Reports Server (NTRS)

Nazarenko, N.

1983-01-01

The fabrication and operation of membrane switches are discussed. The membrane switch functions as a normally open, momentary contact, low-voltage pressure-sensitive device. Its design is a three-layer sandwich usually constructed of polyester film. Conductive patterns are deposited onto the inner side of top and bottom sheets by silk screening. The center spacer is then placed between the two circuit layers to form a sandwich, generally held together by an adhesive. When pressure is applied to the top layer, it flexes through the punched openings of the spacer to establish electrical contact between conductive pads of the upper and lower sheets, momentarily closing the circuit. Upon release of force the top sheet springs back to its normal open position. The membrane touch switch is being used in a rapidly expanding range of applications, including instrumentation, appliances, electronic games and keyboards. Its board acceptance results from its low cost, durability, ease of manufacture, cosmetic appeal and design flexibility. The principal electronic components in the membrane switch are the conductor and dielectric.

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Couto, O. D. D., E-mail: odilon@ifi.unicamp.br; Almeida, P. T. de; Santos, G. E. dos

We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL)more » measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 μs for QDs depending on the spacer layer thickness.« less

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Deuterium transport in Cu, CuCrZr, and Cu/Be

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Hankins, M. R.; Longhurst, G. R.; Pawelko, R. J.

This paper presents the results of deuterium implantation/permeation experiments and TMAP4 simulations for a CuCrZr alloy, for OFHC-Cu and for a Cu/Be bi-layered structure at temperatures from 700 to 800 K. Experiments used a mass-analyzed, 3-keV D 3+ ion beam with particle flux densities of 5 × 10 19 to 7 × 10 19 D/m 2 s. Effective diffusivities and surface molecular recombination coefficients were derived giving Arrhenius pre-exponentials and activation energies for each material: CuCrZr alloy, (2.0 × 10 -2 m 2/s, 1.2 eV) for diffusivity and (2.9 × x10 -14 m 4/s, 1.92 eV) for surface molecular recombination coefficients; OFHC Cu, (2.1 × 10 -6 m 2/s, 0.52 eV) for diffusivity and (9.1 × 10 -18 m 4/s, 0.99 eV) for surface molecular recombination coefficients. TMAP4 simulation of permeation data measured for a Cu/Be bi-layer sample was achieved using a four-layer structure (Cu/BeO interface/Be/BeO back surface) and recommended values for diffusivity and solubility in Be, BeO and Cu.

Evidence for Cu2-xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

NASA Astrophysics Data System (ADS)

Simsek Sanli, E.; Ramasse, Q. M.; Mainz, R.; Weber, A.; Abou-Ras, D.; Sigle, W.; van Aken, P. A.

2017-07-01

Cu(In,Ga)Se2 (CIGS)-based solar cells reach high power-conversion efficiencies of above 22%. In this work, a three-stage co-evaporation method was used for their fabrication. During the growth stages, the stoichiometry of the absorbers changes from Cu-poor ([Cu]/([In] + [Ga]) < 1) to Cu-rich ([Cu]/([In] + [Ga]) > 1) and finally becomes Cu-poor again when the growth process is completed. It is known that, according to the Cu-In-Ga-Se phase diagram, a Cu-rich growth leads to the presence of Cu2-xSe (x = 0-0.25), which is assumed to assist in recrystallization, grain growth, and defect annihilation in the CIGS layer. So far, Cu2-xSe precipitates with spatial extensions on the order of 10-100 nm have been detected only in Cu-rich CIGS layers. In the present work, we report Cu2-xSe platelets with widths of only a few atomic planes at grain boundaries and as inclusions within grains in a polycrystalline, Cu-poor CIGS layer, as evidenced by high-resolution scanning transmission electron microscopy (STEM). The chemistry of the Cu-Se secondary phase was analyzed by electron energy-loss spectroscopy, and STEM image simulation confirmed the identification of the detected phase. These results represent additional experimental evidence for the proposed topotactical growth model for Cu-Se-assisted CIGS thin-film formation under Cu-rich conditions.

Fabrication of nanocrystalline surface composite layer on Cu plate under ball collisions.

PubMed

Romankov, S; Park, Y C; Yoon, J M

2014-10-01

It was demonstrated that the severe plastic deformation of a surface induced by repeated ball collisions can be effectively used for fabrication of the nanocrystalline surface composite layers. The Cu disk was fixed at the top of a vibration chamber and ball treated. Al, Zr, Ni, Co and Fe were introduced into a Cu plate as contaminants from the grinding media one after the other by 15-min ball treatment. The composite structure was formed as a result of mechanical intermixing of the components. The particle size in as-fabricated layer ranged from 2 nm to 20 nm, with average values of about 7 nm. As-fabricated layer contained non-equilibrium multicomponent solid solution based on FCC Cu crystal structure, Zr-based phase, nanosized steel debris and amorphous phase. The hardness of the as-fabricated composite was almost ten times that of the initial Cu plate.

The synergistic effect of micro/nano-structured and Cu2+-doped hydroxyapatite particles to promote osteoblast viability and antibacterial activity.

PubMed

Shi, Feng; Liu, Yumei; Zhi, Wei; Xiao, Dongqin; Li, Hongyu; Duan, Ke; Qu, Shuxin; Weng, Jie

2017-06-06

Microstructure and chemical constitution are important factors affecting the biological activity of biomaterials. This study aimed to fabricate hydroxyapatite (HAp) particles with both micro/nanohybrid structure and Cu 2+ doping to promote osteogenic differentiation and antibacterial property. In the presence of inositol hexakisphosphate (IP6), micro/nano-structured and Cu 2+ -doped HAp (HAp-IP6-Cu) microspheres were successfully fabricated via hydrothermal method. Morphological observation showed that HAp-IP6-Cu microspheres with a diameter of 3.1-4.1 μm were chrysanthemum-like and composed of nano-flakes approximately 50 nm in thickness. Compared with the HAp micro-rods or IP6 modified HAp (HAp-IP6) microspheres, HAp-IP6-Cu microspheres had a larger specific surface area, better hydrophilicity and stronger ability to adsorb bovine serum albumin. To evaluate the synergistic effects of micro/nanohybrid structure and Cu 2+ on cell behavior, rat calvarial osteoblasts (RCOs) were cultured on HAp-IP6-Cu, HAp-IP6 and HAp layers as well as their extracts, respectively. Results demonstrated that HAp-IP6-Cu layer promoted the adhesion, proliferation and osteogenic differentiation of RCOs. The cells grew on HAp-IP6-Cu and HAp-IP6 layers exhibited greater spreading than those on HAp layer. In addition, quantitative test by the agar disk diffusion technique found that HAp-IP6-Cu microspheres were effectively against S taphylococcus aureus and E scherichia coli. These results demonstrated that HAp-IP6-Cu microspheres may be a potential candidate as a bioactive and anti-infective biomaterial for bone regeneration.

Open-celled polyurethane foam

NASA Technical Reports Server (NTRS)

Russell, L. W.

1970-01-01

Open-celled polyurethane foam has a density of 8.3 pounds per cubic foot and a compressive strength of 295 to 325 psi. It is useful as a porous spacer in layered insulation and as an insulation material in vacuum tight systems.

Interfacial Reaction and IMC Growth of an Ultrasonically Soldered Cu/SAC305/Cu Structure during Isothermal Aging

PubMed Central

Long, Weifeng; Hu, Xiaowu; Fu, Yanshu

2018-01-01

In order to accelerate the growth of interfacial intermetallic compound (IMC) layers in a soldering structure, Cu/SAC305/Cu was first ultrasonically spot soldered and then subjected to isothermal aging. Relatively short vibration times, i.e., 400 ms and 800 ms, were used for the ultrasonic soldering. The isothermal aging was conducted at 150 °C for 0, 120, 240, and 360 h. The evolution of microstructure, the IMC layer growth mechanism during aging, and the shear strength of the joints after aging were systemically investigated. Results showed the following. (i) Formation of intermetallic compounds was accelerated by ultrasonic cavitation and streaming effects, the thickness of the interfacial Cu6Sn5 layer increased with aging time, and a thin Cu3Sn layer was identified after aging for 360 h. (ii) The growth of the interfacial IMC layer of the ultrasonically soldered Cu/SAC305/Cu joints followed a linear function of the square root of the aging time, revealing a diffusion-controlled mechanism. (iii) The tensile shear strength of the joint decreased to a small extent with increasing aging time, owing to the combined effects of IMC grain coarsening and the increase of the interfacial IMC. (iv) Finally, although the fracture surfaces and failure locations of the joint soldered with 400 ms and 800 ms vibration times show similar characteristics, they are influenced by the aging time. PMID:29316625

Distinct oxygen hole doping in different layers of Sr₂CuO 4-δ/La₂CuO₄ superlattices

DOE PAGES

Smadici, S.; Lee, J. C. T.; Rusydi, A.; ...

2012-03-28

X-ray absorption in Sr₂CuO 4-δ/La₂CuO₄ (SCO/LCO) superlattices shows a variable occupation with doping of a hole state different from holes doped for x≲x optimal in bulk La 2-xSr xCuO₄ and suggests that this hole state is on apical oxygen atoms and polarized in the a-b plane. Considering the surface reflectivity gives a good qualitative description of the line shapes of resonant soft x-ray scattering. The interference between superlattice and surface reflections was used to distinguish between scatterers in the SCO and the LCO layers, with the two hole states maximized in different layers of the superlattice.

Formation of Multilayer Cu Islands Embedded beneath the Surface of Graphite: Characterization and Fundamental Insights

DOE PAGES

Lii-Rosales, Ann; Han, Yong; Evans, James W.; ...

2018-02-06

Here in this paper, we present an extensive experimental study of the conditions under which Cu forms encapsulated islands under the top surface layers of graphite, as a result of physical vapor deposition of Cu on argon-ion-bombarded graphite. When the substrate is held at 800 K during deposition, conditions are optimal for formation of encapsulated multilayer Cu islands. Deposition temperatures below 600 K favor adsorbed Cu clusters, while deposition temperatures above 800 K favor a different type of feature that is probably a single-layer intercalated Cu island. The multilayer Cu islands are characterized with respect to size and shape, thicknessmore » and continuity of the graphitic overlayer, relationship to graphite steps, and stability in air. The experimental techniques are scanning tunneling microscopy and X-ray photoelectron spectroscopy. We also present an extensive study using density functional theory to compare stabilities of a wide variety of configurations of Cu atoms, Cu clusters, and Cu layers on/under the graphite surface. The only configuration that is significantly more stable under the graphite surface than on top of it, is a single Cu atom. This analysis leads us to conclude that formation of encapsulated Cu islands is kinetically driven, rather than thermodynamically driven.« less

Formation of Multilayer Cu Islands Embedded beneath the Surface of Graphite: Characterization and Fundamental Insights

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lii-Rosales, Ann; Han, Yong; Evans, James W.

Here in this paper, we present an extensive experimental study of the conditions under which Cu forms encapsulated islands under the top surface layers of graphite, as a result of physical vapor deposition of Cu on argon-ion-bombarded graphite. When the substrate is held at 800 K during deposition, conditions are optimal for formation of encapsulated multilayer Cu islands. Deposition temperatures below 600 K favor adsorbed Cu clusters, while deposition temperatures above 800 K favor a different type of feature that is probably a single-layer intercalated Cu island. The multilayer Cu islands are characterized with respect to size and shape, thicknessmore » and continuity of the graphitic overlayer, relationship to graphite steps, and stability in air. The experimental techniques are scanning tunneling microscopy and X-ray photoelectron spectroscopy. We also present an extensive study using density functional theory to compare stabilities of a wide variety of configurations of Cu atoms, Cu clusters, and Cu layers on/under the graphite surface. The only configuration that is significantly more stable under the graphite surface than on top of it, is a single Cu atom. This analysis leads us to conclude that formation of encapsulated Cu islands is kinetically driven, rather than thermodynamically driven.« less

Voltage controlled spintronic devices for logic applications

DOEpatents

You, Chun-Yeol; Bader, Samuel D.

2001-01-01

A reprogrammable logic gate comprising first and second voltage-controlled rotation transistors. Each transistor comprises three ferromagnetic layers with a spacer and insulating layer between the first and second ferromagnetic layers and an additional insulating layer between the second and third ferromagnetic layers. The third ferromagnetic layer of each transistor is connected to each other, and a constant external voltage source is applied to the second ferromagnetic layer of the first transistor. As input voltages are applied to the first ferromagnetic layer of each transistor, the relative directions of magnetization of the ferromagnetic layers and the magnitude of the external voltage determines the output voltage of the gate. By altering these parameters, the logic gate is capable of behaving as AND, OR, NAND, or NOR gates.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

Control of fluorescence in quantum emitter and metallic nanoshell hybrids for medical applications

NASA Astrophysics Data System (ADS)

Singh, Mahi R.; Guo, Jiaohan; J. Cid, José M.; De Hoyos Martinez, Jesús E.

2017-03-01

We study the light emission from a quantum emitter and double metallic nanoshell hybrid systems. Quantum emitters act as local sources which transmit their light efficiently due to a double nanoshell near field. The double nanoshell consists of a dielectric core and two outer nanoshells. The first nanoshell is made of a metal, and the second spacer nanoshell is made of a dielectric material or human serum albumin. We have calculated the fluorescence emission for a quantum emitter-double nanoshell hybrid when it is injected in an animal or a human body. Surface plasmon polariton resonances in the double nanoshell are calculated using Maxwell's equations in the quasi-static approximation, and the fluorescence emission is evaluated using the density matrix method in the presence of dipole-dipole interactions. We have compared our theory with two fluorescence experiments in hybrid systems in which the quantum emitter is Indocyanine Green or infrared fluorescent molecules. The outer spacer nanoshell of double metallic nanoshells consists of silica and human serum albumin with variable thicknesses. Our theory explains the enhancement of fluorescence spectra in both experiments. We find that the thickness of the spacer nanoshell layer increases the enhancement when the fluorescence decreases. The enhancement of the fluorescence depends on the type of quantum emitter, spacer layer, and double nanoshell. We also found that the peak of the fluorescence spectrum can be shifted by changing the shape and the size of the nanoshell. The fluorescence spectra can be switched from one peak to two peaks by removing the degeneracy of excitonic states in the quantum emitter. Hence, using these properties, one can use these hybrids as sensing and switching devices for applications in medicine.

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

Load responsive multilayer insulation performance testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dye, S.; Kopelove, A.; Mills, G. L.

Cryogenic insulation designed to operate at various pressures from one atmosphere to vacuum, with high thermal performance and light weight, is needed for cryogenically fueled space launch vehicles and aircraft. Multilayer insulation (MLI) performs well in a high vacuum, but the required vacuum shell for use in the atmosphere is heavy. Spray-on foam insulation (SOFI) is often used in these systems because of its light weight, but can have a higher heat flux than desired. We report on the continued development of Load Responsive Multilayer Insulation (LRMLI), an advanced thermal insulation system that uses dynamic beam discrete spacers that providemore » high thermal performance both in atmosphere and vacuum. LRMLI consists of layers of thermal radiation barriers separated and supported by micromolded polymer spacers. The spacers have low thermal conductance, and self-support a thin, lightweight vacuum shell that provides internal high vacuum in the insulation. The dynamic load responsive spacers compress to support the external load of a vacuum shell in one atmosphere, and decompress under reduced atmospheric pressure for lower heat leak. Structural load testing was performed on the spacers with various configurations. LRMLI was installed on a 400 liter tank and boil off testing with liquid nitrogen performed at various chamber pressures from one atmosphere to high vacuum. Testing was also performed with an MLI blanket on the outside of the LRMLI.« less

Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

PubMed

Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

2014-02-15

Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

Fabrication of Cu-Ni mixed phase layer using DC electroplating and suppression of Kirkendall voids in Sn-Ag-Cu solder joints

NASA Astrophysics Data System (ADS)

Chee, Sang-Soo; Lee, Jong-Hyun

2014-05-01

A solderable layer concurrently containing Cu-rich and Ni-rich phases (mixed-phase layer, MPL) was fabricated by direct current electroplating under varying process conditions. Current density was considered as the main parameter to adjust the microstructure and composition of MPL during the electroplating process, and deposit thickness were evaluated as functions of plating time. As a result, it was observed that the coral-like structure that consisted of Cu-rich and Ni-rich phases grew in the thickness direction. The most desirable microstructure was obtained at a relatively low current density of 0.4 mA/cm2. In other words, the surface was the smoothest and defect-free at this current density. The electroplating rate was slightly enhanced with an increase in current density. Investigations of its solid-state reaction properties, including the formation of Kirkendall voids, were also carried out after reflow soldering with Sn-3.0 Ag-0.5 Cu solder balls. In the solid-state aging experiment at 125°C, Kirkendall voids at the normal Sn-3.0 Ag-0.5 Cu solder/Cu interface were easily formed after just 240 h. Meanwhile, the presence of an intermetallic compound (IMC) layer created in the solder/MPL interface indicated a slightly lower growth rate, and no Kirkendall voids were observed in the IMC layer even after 720 h.

Study of Sn and SnAgCu Solders Wetting Reaction on Ni/Pd/Au Substrates

NASA Astrophysics Data System (ADS)

Liu, C. Y.; Wei, Y. S.; Lin, E. J.; Hsu, Y. C.; Tang, Y. K.

2016-12-01

Wetting reactions of pure Sn and Sn-Ag-Cu solder balls on Au(100 Å and 1000 Å)/Pd(500 Å)/Ni substrates were investigated. The (Au, Pd)Sn4 phase formed in the initial interfacial reaction between pure Sn and Au(100 Å and 1000 Å)/Pd(500 Å)/Ni substrates. Then, the initially formed (Au, Pd)Sn4 compound layer either dissolved or spalled into the molten Sn solder with 3 s of reflowing. The exposed Ni under-layer reacted with Sn solder and formed an interfacial Ni3Sn4 compound. We did not observe spalling compound in the Sn-Ag-Cu case, either on the thin Au (100 Å) or the thick Au (1000 Å) substrates. This implies that the Cu content in the Sn-Ag-Cu solder can efficiently suppress the spalling effect and really stabilize the interfacial layer. Sn-Ag-Cu solder has a better wetting than that of the pure Sn solder, regardless of the Au thickness of the Au/Pd/Ni substrate. For both cases of pure Sn and Sn-Ag-Cu, the initial wetting (<3-s reflowing) on the thin Au (100 Å) substrate is better than that of the thick Au (1000 Å) substrate. Over 3-s reflowing, the wetting on the thicker Au layer (1000 Å) substrate becomes better than the wetting on the thinner Au layer (100 Å) substrate.

Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device

NASA Astrophysics Data System (ADS)

Zhang, Lei; Xu, Haiyang; Wang, Zhongqiang; Yu, Hao; Ma, Jiangang; Liu, Yichun

2016-01-01

The coexistence of uniform bipolar and unipolar resistive-switching (RS) characteristics was demonstrated in a double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device. By changing the compliance current (CC) from 1 mA to 10 mA, the RS behavior can be converted from the bipolar mode (BRS) to the unipolar mode (URS). The temperature dependence of low resistance states further indicates that the CFs are composed of the Ag atoms and Cu vacancies for the BRS mode and URS mode, respectively. For this double-layer structure device, the thicker conducting filaments (CFs) will be formed in the ZnS-Ag layer, and it can act as tip electrodes. Thus, the formation and rupture of these two different CFs are located in the CuAlO2 layer, realizing the uniform and stable BRS and URS.

Comparative study on the passivation layers of copper sulphide minerals during bioleaching

NASA Astrophysics Data System (ADS)

Fu, Kai-bin; Lin, Hai; Mo, Xiao-lan; Wang, Han; Wen, Hong-wei; Wen, Zi-long

2012-10-01

The bioleaching of copper sulphide minerals was investigated by using A. ferrooxidans ATF6. The result shows the preferential order of the minerals bioleaching as djurleite>bornite>pyritic chalcopyrite>covellite>porphyry chalcopyrite. The residues were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is indicated that jarosite may not be responsible for hindered dissolution. The elemental sulfur layer on the surface of pyritic chalcopyrite residues is cracked. The compact surface layer of porphyry chalcopyrite may strongly hinder copper extraction. X-ray photoelectron spectroscopy (XPS) further confirms that the passivation layers of covellite, pyritic chalcopyrite, and porphyry chalcopyrite are copper-depleted sulphide Cu4S11, S8, and copper-rich iron-deficient polysulphide Cu4Fe2S9, respectively. The ability of these passivation layers was found as Cu4Fe2S9>Cu4S11>S8>jarosite.

Orientation dependences of atomic structures in chemically heterogeneous Cu{sub 50}Ta{sub 50}/Ta glass-crystal interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Guiqin; Gao, Xiaoze; Li, Jinfu

2015-01-07

Molecular dynamics simulations based on an angular-dependent potential were performed to examine the structural properties of chemically heterogeneous interfaces between amorphous Cu{sub 50}Ta{sub 50} and crystalline Ta. Several phenomena, namely, layering, crystallization, intermixing, and composition segregation, were observed in the Cu{sub 50}Ta{sub 50} region adjacent to the Ta layers. These interfacial behaviors are found to depend on the orientation of the underlying Ta substrate: Layering induced by Ta(110) extends the farthest into Cu{sub 50}Ta{sub 50}, crystallization in the Cu{sub 50}Ta{sub 50} region is most significant for interface against Ta(100), while inter-diffusion is most pronounced for Ta(111). It turns out thatmore » the induced layering behavior is dominated by the interlayer distances of the underlying Ta layers, while the degree of inter-diffusion is governed by the openness of the Ta crystalline layers. In addition, composition segregations are observed in all interface models, corresponding to the immiscible nature of the Cu-Ta system. Furthermore, Voronoi polyhedra 〈0,5,2,6〉 and 〈0,4,4,6〉 are found to be abundant in the vicinity of the interfaces for all models, whose presence is believed to facilitate the structural transition between amorphous and body centered cubic.« less

Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer

NASA Astrophysics Data System (ADS)

Pak, Jinsu; Min, Misook; Cho, Kyungjune; Lien, Der-Hsien; Ahn, Geun Ho; Jang, Jingon; Yoo, Daekyoung; Chung, Seungjun; Javey, Ali; Lee, Takhee

2016-10-01

Photoswitching response times (rise and decay times) of a vertical organic and inorganic heterostructure with p-type copper phthalocyanine (CuPc) and n-type molybdenum disulfide (MoS2) semiconductors are investigated. By stacking a CuPc layer on MoS2 field effect transistors, better photodetection capability and fast photoswitching rise and decay phenomena are observed. Specifically, with a 2 nm-thick CuPc layer on the MoS2 channel, the photoswitching decay time decreases from 3.57 s to 0.18 s. The p-type CuPc layer, as a passivation layer, prevents the absorption of oxygen on the surface of the MoS2 channel layer, which results in a shortened photoswitching decay time because adsorbed oxygen destroys the balanced ratio of electrons and holes, leading to the interruption of recombination processes. The suggested heterostructure may deliver enhanced photodetection abilities and photoswitching characteristics for realizing ultra-thin and sensitive photodetectors.

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Excess Oxygen Defects in Layered Cuprates

DOE R&D Accomplishments Database

Lightfoot, P.; Pei, S. Y.; Jorgensen, J. D.; Manthiram, A.; Tang, X. X.; Goodenough, J. B.

1990-09-01

Neutron powder diffraction has been used to study the oxygen defect chemistry of two non-superconducting layered cuprates, La{sub 1. 25}Dy{sub 0.75}Cu{sub 3.75}F{sub 0.5}, having a T{sup {asterisk}}- related structure, and La{sub 1.85}Sr{sub 1.15}Cu{sub 2}O{sub 6.25}, having a structure related to that of the newly discovered double-layer superconductor La{sub 2-x}Sr{sub x}CaCu{sub 2}O{sub 6}. The role played by oxygen defects in determining the superconducting properties of layered cuprates is discussed.

Spin scattering asymmetric coefficients and enhanced specific interfacial resistance of fully epitaxial current-perpendicular-to-plane giant magnetoresistance spin valves using alternate monatomic layered [Fe/Co]n and a Ag spacer layer

NASA Astrophysics Data System (ADS)

Jung, J. W.; Shiozaki, R.; Doi, M.; Sahashi, M.

2011-04-01

Using current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) measurement, we have evaluated the bulk and interface spin scattering asymmetric coefficients, βF and γF/N and the specific interfacial resistance, AR*F/N, for exchange-biased spin-valves consisting of artificially ordered B2 structure Fe50Co50 and Ag spacer layer. Artificially epitaxial ordered Fe50Co50 superlattices have been successfully fabricated on MgO (001) substrate by alternate monatomic layer (AML) deposition at a substrate temperature of 75 °C. The structural properties of the full epitaxial trilayer, AML[Fe/Co]n/Ag/AML[Fe/Co]n, on the Ag electrode have been confirmed by in situ reflection high-energy electron diffraction and transmission electron diffraction microscopy. A considerably large resistance-area product change and MR ratio (ΔRA > 3 mΩμm2 and MR ratio ˜5%) were confirmed even at thin AML[Fe/Co]n layer at room temperature (RT) in our spin-valve elements. The estimated values of βF and γF/N were 0.80 and 0.84 ± 0.02, respectively, from the Valet-Fert theory analysis of ΔRA as a function of thickness of the ferromagnetic layer (3, 4, and 5 nm) on the basis of the two-current model.

Pure spin current manipulation in antiferromagnetically exchange coupled heterostructures

NASA Astrophysics Data System (ADS)

Avilés-Félix, L.; Butera, A.; González-Chávez, D. E.; Sommer, R. L.; Gómez, J. E.

2018-03-01

We present a model to describe the spin currents generated by ferromagnet/spacer/ferromagnet exchange coupled trilayer systems and heavy metal layers with strong spin-orbit coupling. By exploiting the magnitude of the exchange coupling (oscillatory RKKY-like coupling) and the spin-flop transition in the magnetization process, it has been possible to produce spin currents polarized in arbitrary directions. The spin-flop transition of the trilayer system originates pure spin currents whose polarization vector depends on the exchange field and the magnetization equilibrium angles. We also discuss a protocol to control the polarization sign of the pure spin current injected into the metallic layer by changing the initial conditions of magnetization of the ferromagnetic layers previously to the spin pumping and inverse spin Hall effect experiments. The small differences in the ferromagnetic layers lead to a change in the magnetization vector rotation that permits the control of the sign of the induced voltage components due to the inverse spin Hall effect. Our results can lead to important advances in hybrid spintronic devices with new functionalities, particularly, the ability to control microscopic parameters such as the polarization direction and the sign of the pure spin current through the variation of macroscopic parameters, such as the external magnetic field or the thickness of the spacer in antiferromagnetic exchange coupled systems.

Control of indium tin oxide anode work function modified using Langmuir-Blodgett monolayer for high-efficiency organic photovoltaics

NASA Astrophysics Data System (ADS)

Yokokura, Yuya; Dogase, Tomomichi; Shinbo, Tatsuki; Nakayashiki, Yuya; Takagi, Yusuke; Ueda, Kazuyoshi; Sarangerel, Khayankhyarvaa; Delgertsetseg, Byambasuren; Ganzorig, Chimed; Sakomura, Masaru

2017-08-01

The use of Langmuir-Blodgett (LB) monolayers to modify the indium tin oxide (ITO) work function and thus improve the performance of zinc phthalocyanine (ZnPc)/fullerene (C60)-based and boron subphthalocyanine chloride (SubPc)/C60-based small molecule organic photovoltaic devices (OPVs) was examined. In general, LB precursor compounds contain one or more long alkyl chain substituents that can act as spacers to prevent electrical contact with adjoining electrode surfaces. As one example of such a compound, arachidic acid (CH3(CH2)18COOH) was inserted in the forms of one-layer, three-layer or five-layer LB films between the anode ITO layer and the p-type layer in ZnPc-C60-based OPVs to investigate the effects of the long alkyl chain group when it acts as an electrically insulating spacer. The short-circuit current density (Jsc) values of the OPVs with the three- and five-layer inserts (1.78 mA.cm-2 and 0.61 mA.cm-2, respectively) were reduced dramatically, whereas the Jsc value for the OPV with the single-layer insertion (2.88 mA.cm-2) was comparable to that of the OPV without any insert (3.14 mA.cm-2). The ITO work function was shifted positively by LB deposition of a surfactant compound, C9F19C2H4-O-C2H4-COOH (PFECA), which contained a fluorinated head group. This positive effect was maintained even after formation of an upper p-type organic layer. The Jsc and open-circuit voltage (Voc) of the SubPc-C60-based OPV with the LB-modified ITO layers were effectively enhanced. As a result, a 42% increase in device efficiency was achieved.

Diffusion behavior of Cu/Ta heterogeneous interface under high temperature and high strain: An atomistic investigation

NASA Astrophysics Data System (ADS)

Li, Ganglong; Wu, Houya; Luo, Honglong; Chen, Zhuo; Tay, Andrew A. O.; Zhu, Wenhui

2017-09-01

Three-dimensional (3D) integration technology using Cu interconnections has emerged as a promising solution to improve the performance of silicon microelectronic devices. However, Cu diffuses into SiO2 and requires a barrier layer such as Ta to ensure acceptable reliability. In this paper, the effects of temperature and strain normal to the interface on the inter-diffusion of Cu and Ta at annealing conditions are investigated using a molecular dynamics (MD) technique with embedded atomic method (EAM) potentials. Under thermal annealing conditions without strain, it is found that a Cu-rich diffusion region approximately 2 nm thick is formed at 1000 K after 10 ns of annealing. Ta is capable of diffusing into the interior of Cu but Cu hardly diffuses into the inner lattice of Ta. At the Cu side near the interface an amorphous structure is formed due to the process of diffusion. The diffusion activation energy of Cu and Ta are found to be 0.9769 and 0.586 eV, respectively. However, when a strain is applied, a large number of crystal defects are generated in the sample. As the strain is increased, extrinsic stacking faults (ESFs) and lots of Shockley partial dislocations appear. The density of the dislocations and the diffusion channels increase, promoting the diffusion of Cu atoms into the inner lattice of Ta. The thickness of the diffusion layer increases to 4 times the value when only a temperature load of 700 K is applied. The MD simulations demonstrated that Ta is very effective as a barrier layer under thermal loading only, and its effectiveness is impaired by tensile strain at the Cu/Ta interface. The simulations also clarified the mechanism that caused the impairment. The methodology and approach described in this paper can be followed further to study the effectiveness of barrier layers under various annealing and strain conditions, and to determine the minimum thickness of barrier layers required for a particular application.

Obtention of low oxidation states of copper from Cu 2+-Al 3+ layered double hydroxides containing organic sulfonates in the interlayer

NASA Astrophysics Data System (ADS)

Trujillano, Raquel; Holgado, María Jesús; Rives, Vicente

2009-03-01

A series of hydrotalcite-type compounds containing Cu(II) and Al(III) in the layers, and carbonate or different alkylsulfonates in the interlayer, have been prepared and studied. Calcination of these solids gives rise to formation of metallic copper and Cu 2+ and Cu + oxides or sulfates, depending on the calcination temperature and on the precise nature of the interlayer alkylsulfonate.

Universal intrinsic scale of the hole concentration in high- Tc cuprates

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.; Hsieh, H. H.; Tanimoto, M.

2004-12-01

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer Ppl in Y1-xCaxBa2Cu3O6 (Ppl=x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl , S290(Ppl) , of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl=z) . We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the formal valency of Cu . We find two characteristic scaling temperatures, TS* and TS2* , in the TEP versus temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; lower pseudogap temperature defined by the TS* versus Ppl curve and upper pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high- Tc cuprates, Tc depends on the number of layers, therefore, the inter layer coupling, in each individual system.

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Preparation and Optoelectronic Characteristics of ZnO/CuO-Cu2O Complex Inverse Heterostructure with GaP Buffer for Solar Cell Applications

PubMed Central

Hsu, Chih-Hung; Chen, Lung-Chien; Lin, Yi-Feng

2013-01-01

This study reports the optoelectronic characteristics of ZnO/GaP buffer/CuO-Cu2O complex (COC) inverse heterostructure for solar cell applications. The GaP and COC layers were used as buffer and absorber in the cell structure, respectively. An energy gap widening effect and CuO whiskers were observed as the copper (Cu) layer was exerted under heat treatment for oxidation at 500 °C for 10 min, and arose from the center of the Cu2O rods. For preparation of the 30 nm-thick GaP buffer by sputtering from GaP target, as the nitrogen gas flow rate increased from 0 to 2 sccm, the transmittance edge of the spectra demonstrated a blueshift form 2.24 to 3.25 eV. Therefore, the layer can be either GaP, GaNP, or GaN by changing the flow rate of nitrogen gas. PMID:28788341

Temperature Variation of the Resistivity and Magnetoresistance in Cobalt-Enhanced Spin-Valve Structures

NASA Astrophysics Data System (ADS)

Lottis, D. K.; Szucs, J.; O'Brien, T.; Gangopadhyay, S.; Mao, S.

1996-03-01

Several FeMn exchange-biased spin-valve structures have been prepared in an ion-beam sputtering system. The magnitude of the MR in these permalloy-based structures has been enhanced by the inclusion of Co at the interfaces with the Cu spacer layer (S.S.P. Parkin, PRL 71), 1641 (1993). Typical values for the MR in our spin-valves are 3% at room temperature and 7% at 8K. Both R and MR have been measured over the entire range from 8K to 325K, and exhibit an anomaly at a temperature near 250K. The resistance exhibits a local minimum, similar to what has been observed in Cr-based alloys (E. Fawcett et al, Rev. Mod. Phys. 66), 25 (1994) and multilayers (E. Fullerton et al, PRL 75), 330 (1995) at the Néel temperature. This anomaly is also visible in both the MR vs. T and the Δ R vs. T curves. These results, which suggest the presence of another Mn-based antiferromagnetic alloy in our samples, are particularly relevant for the development of applications where the nature of the temperature variation of the MR is crucial.

Nonenzymatic detection of glucose using BaCuO2 thin layer

NASA Astrophysics Data System (ADS)

Ito, Takeshi; Asada, Tsuyoshi; Asai, Naoto; Shimizu, Tomohiro; Shingubara, Shoso

2017-01-01

A BaCuO2 thin layer was deposited on a glassy carbon electrode and used for the direct oxidation of glucose. The crystalline, electrochemical, and physicochemical properties that depend on the deposition temperature and deposition time were studied. X-ray diffraction (XRD) analysis showed that the thin layer was amorphous even at 400 °C. The current density of the glucose oxidation using the thin layer deposited at 200 °C was higher than those at other deposition temperatures. Under this condition, the current density increased with the glucose concentration and deposition time. These results indicate that a BaCuO2 thin layer has potential for measuring the blood glucose level without enzymes.

Spray- and spin-assisted layer-by-layer assembly of copper nanoparticles on thin-film composite reverse osmosis membrane for biofouling mitigation.

PubMed

Ma, Wen; Soroush, Adel; Van Anh Luong, Tran; Brennan, Gregory; Rahaman, Md Saifur; Asadishad, Bahareh; Tufenkji, Nathalie

2016-08-01

Copper nanoparticles (CuNPs) have long been considered as highly effective biocides; however, the lack of suitable methods for loading CuNPs onto polymeric membranes is recognized as being one of the primary reasons for the limited research concerning their application in membrane industries. A highly efficient spray- and spin-assisted layer-by-layer (SSLbL) method was developed to functionalize the TFC polyamide RO membranes with controllable loading of CuNPs for biofouling control. The SSLbL method was able to produce a uniform bilayer of polyethyleneimine-coated CuNPs and poly(acrylic) acid in less than 1 min, which is far more efficient than the traditional dipping approach (25-60 min). The successful loading of CuNPs onto the membrane surface was confirmed by XPS analysis. Increasing the number of bilayers from 2 to 10 led to an increased quantity of CuNPs on the membrane surface, from 1.75 to 23.7 μg cm(-2). Multi-layer coating exhibited minor impact on the membrane water permeation flux (13.3% reduction) while retaining the original salt rejection ability. Both static bacterial inactivation and cross-flow filtration tests demonstrated that CuNPs could significantly improve anti-biofouling property of a polyamide membrane and effectively inhibit the permeate flux reduction caused by bacterial deposition on the membrane surface. Once depleted, CuNPs can also be potentially regenerated on the membrane surface via the same SSLbL method. Copyright © 2016 Elsevier Ltd. All rights reserved.

Characterization and modeling of microstructural evolution of near-eutectic tin-silver-copper solder joints

NASA Astrophysics Data System (ADS)

Zbrzezny, Adam R.

Near-eutectic Sn-Ag-Cu (SAC) solders are currently considered as major lead-free replacement candidates for Sn-Pb eutectic alloys in microelectronics applications. In this thesis, the microstructural thermal stability including recrystallization, grain growth behavior, Pb and Au contamination effects and interaction of the SAC solder with Cu and Ni substrates were investigated. The true eutectic composition of the Sn-Ag-Cu alloy was verified to be Sn3.5Ag0.9Cu wt.%, and the eutectic melting temperature was determined to be 217.4 +/- 0.8°C. The system was classified as belonging to faceting (Cu6Sn5)-faceting (Ag3Sn)-nonfaceting (Sn matrix) ternary eutectic. The most significant consequence of Pb contamination was the formation of a quaternary eutectic phase (Sn-Ag-Cu-Pb) with a melting point at 176°C. Similarly, the presence of gold in the SAC alloy led to a development of a new quaternary phase (Sn-Ag-Cu-Au) melting at 204°C. Prolonged aging of SAC-4 wt.% Au on nickel resulted in the deposition of a new, previously unreported, intermetallic (IMC) layer, ((Au1-xCUx)6Sn 5, 15 wt.% of Au) on top of the existing (Cu1-yNi y)6Sn5 layer. The interfacial products that formed during soldering to copper were Cu6Sn5 and Cu3Sn. Soldering to nickel resulted in the formation of one layer, (Cu1-yNiy) 6Sn5, which was different from the expected Ni3Sn 4 layer. A small copper content in the SAC solder (0.7 wt.%) was sufficient to promote this thermodynamic shift. Intermetallic growth on Cu during solid state aging was established to be bulk diffusion controlled. The IMC layers in the SAC system grew at a slower rate than in the Sn-Pb system. It was found that the reliability of SAC solder joints on copper was considerably better than on nickel due to copper enrichment during reflow and subsequent Cu6Sn5 intermetallic precipitation. Enhanced copper and silver diffusion followed by tin recrystallization and grain growth, cavity nucleation and subsequent micro-crack linkage formed the framework of a proposed microstructural model of solder degradation mechanisms under cyclic creep conditions. A multilayer diffusion model of the SAC/Cu couple was proposed and employed for predicting intermetallic layer growth kinetics. In general, the calculated IMC thicknesses for short and intermediate aging times were in reasonable agreement with the experimental data.

Effect of processing parameters on the formation of C{sub f}/LAS composites/Ag−Cu−Ti/TC4 brazed joint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Duo; Niu, Hongwei

C{sub f}/LAS composites were successfully jointed to TC4 alloy with Ag−Cu−Ti filler by vacuum brazing. The interfacial microstructure of TC4/C{sub f}/LAS composites joints was characterized by employing scanning electron microscope (SEM), energy dispersive spectrometer (EDS), X-diffraction (XRD) and transmission electron microscopy (TEM). The determination of the thin interfacial reaction layer (TiSi{sub 2} + TiC layer) was realized by TEM. The effect of holding time on the interfacial microstructure and shear strength were investigated. With the increasing holding time, the thickness of diffusion layer, Ti{sub 3}Cu{sub 4} layer, and TiSi{sub 2} + TiC layer increased obviously, on the contrary, that ofmore » Ti−Cu intermetallic compound layers decreased gradually. Besides, blocky Ti{sub 3}Cu{sub 4} phase was coarsened when the joint was brazed at 890 °C for 20 min, which deteriorated the mechanical properties of the joint dramatically. The interfacial evolution of TC4/C{sub f}/LAS composites joint and the formation of TiSi{sub 2}, TiC, Ti{sub 3}Cu{sub 4}, TiCu and Ti{sub 2}Cu phases were expounded. The maximum shear strength of 26.4 MPa was obtained when brazed at 890 °C for 10 min. - Highlights: •The thin interface reaction layer was determined to be TiSi{sub 2} + TiC layer by TEM. •Holding time had influence on the interfacial microstructure and joint properties. •Microstructural evolution mechanism and reactions of brazed joints were expounded.« less

Use of π-π forces to steer the assembly of a NTA complex of Cu(II) into hydrogen bonded supramolecular layers (H 3NTA = nitrilotriacetic acid)

NASA Astrophysics Data System (ADS)

Dey, Biswajit; Choudhury, Somnath Ray; Suresh, Eringathodi; Jana, Atish Dipankar; Mukhopadhyay, Subrata

2009-03-01

We propose a crystal engineering principle where we show that it might be possible to direct the organization of molecular complexes into hydrogen bonded supramolecular layers through the use of suitable co-ligands possessing both the hydrogen-bonding as well as π-π stacking capability. This principle has been tested for the organization of [Cu(NTA) 2] units (H 3NTA = nitrilotriacetic acid, N(CH 2CO 2H) 3) in the molecular complex with formula (2-A-PH) 4[Cu(NTA) 2]·6H 2O ( 1), where 2-A-PH is protonated 2-amino-4-picoline. In 1, the 2-amino-4-picoline co-ligands have been utilized to direct the organization of [Cu(NTA) 2] units into hydrogen bonded layers. The linear stacking of π-π bonded protonated 2-amino-4-picoline molecules can be thought as the influencing agent for the organization of [Cu(NTA) 2] units into hydrogen bonded layers.

Soft-template-synthesis of hollow CuO/Co3O4 composites for pseudo-capacitive electrode: A synergetic effect on electrochemical performance

NASA Astrophysics Data System (ADS)

Wang, Kuaibing; Lv, Bo; Wu, Hua; Luo, Xuefei; Xu, Jiangyan; Geng, Zhirong

2016-12-01

Hollow CuO/Co3O4 hybrids, which inherited from its coordination polymer precursor consisting of sheets layer and nanoparticles layer composites, were synthesized and characterized by SEM, EDX, XRD and XPS. To assess its electrochemical capacitive performances, cyclic voltammetry, galvanostatic charging-discharging measurements and A.C. impedance tests were performed successively. The CuO/Co3O4 hybrids had higher capacitance and lower charge transfer resistance than bare Co3O4 nanostructures, revealing that it provided a protection layer and produced a synergistic effect due to the existence of CuO layer. The distinct synergistic effect could be further confirmed by endurance cycling tests. The capacitance of the CuO/Co3O4 hybrids was 111% retained after 500 cycles at a charging rate of 1.0 A g-1 and remained an intense growth trend after 2000 cycles at scan rate of 200 mV s-1.

Electromigration in epitaxial Cu(001) lines

NASA Astrophysics Data System (ADS)

Ramanath, G.; Kim, H.; Goindi, H. S.; Frederick, M. J.; Shin, C.-S.; Goswami, R.; Petrov, I.; Greene, J. E.

2002-04-01

We report the electromigration (EM) response of single-domain epitaxial Cu(001) lines on layers of Ta, TaN, and TiN. Epitaxial Cu(001) lines on nitride layers exhibit nearly two orders of magnitude higher mean-time-to-failure (MTTF) values than those on Ta, indicating the strong influence of the underlayer. The activation energy of EM for Cu on the nitrides is ˜0.8-1.2 eV, and that of Cu on Ta is ˜0.2 eV, for 200-300 °C. Our results also indicate that the MTTF values correlate inversely to the crystal quality of the Cu layers measured by X-ray diffraction. The EM resistance of epitaxial Cu lines with different crystal quality on TaN were measured to separate the effects of interface chemistry and crystal quality. While higher quality epitaxial films reveal a higher EM resistance, the magnitude of the change is smaller than that obtained by changing the interface chemistry. Epitaxial lines exhibit more than 3-4 orders of magnitude higher MTTF than polycrystalline lines on the same underlayer. Based upon our results, we propose that the Cu/underlayer interface chemistry and presence of grain boundary diffusion play important roles in unpassivated Cu films.

Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates

NASA Astrophysics Data System (ADS)

Lucas, F. O.; O'Reilly, L.; Natarajan, G.; McNally, P. J.; Daniels, S.; Taylor, D. M.; William, S.; Cameron, D. C.; Bradley, A. L.; Miltra, A.

2006-01-01

γ-CuCl semiconductor material has been identified as a candidate material for the fabrication of blue-UV optoelectronic devices on Si substrates due to its outstanding electronic, lattice and optical properties. However, CuCl thin films oxidise completely into oxyhalides of Cu II within a few days of exposure to air. Conventional encapsulation of thin γ-CuCl by sealed glass at a deposition/curing temperature greater than 250 °C cannot be used because CuCl interacts chemically with Si substrates when heated above that temperature. In this study we have investigated the behaviour of three candidate dielectric materials for use as protective layers for the heteroepitaxial growth of γ-CuCl on Si substrates: SiO 2 deposited by plasma-enhanced chemical vapour deposition (PECVD), organic polysilsesquioxane-based spin on glass material (PSSQ) and cyclo olefin copolymer (COC) thermoplastic-based material. The optical properties (UV/Vis and IR) of the capped luminescent CuCl films were studied as a function of time, up to 28 days and compared with bare uncapped films. The results clearly show the efficiency of the protective layers. Both COC and the PSSQ layer prevented CuCl film from oxidising while SiO 2 delayed the effect of oxidation. The dielectric constant of the three protective layers was evaluated at 1 MHz to be 2.3, 3.6 and 6.9 for C0C, SiO 2 and PSSQ, respectively.

Kinetics of Isothermal Reactive Diffusion Between Solid Cu and Liquid Sn

NASA Astrophysics Data System (ADS)

O, M.; Suzuki, T.; Kajihara, M.

2018-01-01

The Cu/Sn system is one of the most fundamental and important metallic systems for solder joints in electric devices. To realize reliable solder joints, information on reactive diffusion at the solder joint is very important. In the present study, we experimentally investigated the kinetics of the reactive diffusion between solid Cu and liquid Sn using semi-infinite Cu/Sn diffusion couples prepared by an isothermal bonding technique. Isothermal annealing of the diffusion couple was conducted in the temperature range of 533-603 K for various times up to 172.8 ks (48 h). Using annealing, an intermetallic layer composed of Cu6Sn5 with scallop morphology and Cu3Sn with rather uniform thickness is formed at the original Cu/Sn interface in the diffusion couple. The growth of the Cu6Sn5 scallop occurs much more quickly than that of the Cu3Sn layer and thus predominates in the overall growth of the intermetallic layer. This tendency becomes more remarkable at lower annealing temperatures. The total thickness of the intermetallic layer is proportional to a power function of the annealing time, and the exponent of the power function is close to unity at all the annealing temperatures. This means that volume diffusion controls the intermetallic growth and the morphology of the Cu6Sn5/Sn interface influences the rate-controlling process. Adopting a mean value of 0.99 for the exponent, we obtain a value of 26 kJ/mol for the activation enthalpy of the intermetallic growth.

Optical and electrical properties of Cu-based all oxide semi-transparent photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Hong-Sik; Patel, Malkeshkumar; Yadav, Pankaj

2016-09-05

Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu{sub 2}O or CuO) was used as p-type transparent layer to form a heterojunction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu{sub 2}O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route ofmore » high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics.« less

Formation of Fe3O4@SiO2@C/Ni hybrids with enhanced catalytic activity and histidine-rich protein separation.

PubMed

Zhang, Yanwei; Zhang, Min; Yang, Jinbo; Ding, Lei; Zheng, Jing; Xu, Jingli; Xiong, Shenglin

2016-09-21

In this paper, we have developed an extended Stöber method to construct a Ni(2+)-polydopamine (PDA) complex thin coating on Fe3O4@SiO2 spheres, which can be carbonized to produce hybrid composites with metallic nickel nanoparticles embedded in a PDA-derived thin graphitic carbon layer (named Fe3O4@SiO2@C/Ni). Interestingly, by introducing a thin SiO2 spacer layer between PDA-Ni(2+) and Fe3O4, the reverse electron transfer from PDA to Fe3O4 is probably able to be suppressed in the calcination process, which leads to the in situ reduction of only Ni(2+) by PDA instead of Fe3O4 and Ni(2+). Consequently, the size and density of nickel nanoparticles on the surface of SiO2@Fe3O4 can be finely adjusted. Moreover, it is found that the ability of tuning nickel nanoparticles is mainly dependent on the thickness of the spacer layer. When the thickness of the SiO2 spacer is beyond the electron penetration depth, the size and density of nickel nanoparticles can be exactly tuned. The as-prepared Fe3O4@SiO2@C/Ni was employed as the catalyst to investigate the catalytic performance in the reduction of 4-nitrophenol (4-NP); furthermore, nickel nanoparticles decorated on Fe3O4@SiO2@C spheres display a strong affinity to His-tagged proteins (BHb and BSA) via a specific metal affinity force between polyhistidine groups and nickel nanoparticles.

Electrochemical performance of Ni0.8Cu0.2/Ce0.8Gd0.2O1.9 cermet anodes with functionally graded structures for intermediate-temperature solid oxide fuel cell fueled with syngas

NASA Astrophysics Data System (ADS)

Miyake, Michihiro; Iwami, Makoto; Takeuchi, Mizue; Nishimoto, Shunsuke; Kameshima, Yoshikazu

2018-06-01

The electrochemical performance of layered Ni0.8Cu0.2/Ce0.8Gd0.2O1.9 (GDC) cermet anodes is investigated for intermediate-temperature solid oxide fuel cells (IT-SOFCs) at 600 °C using humidified (3% H2O) model syngas with a molar ratio of H2/CO = 3/2 as the fuel. From the results obtained, the electrochemical performance of the functionally graded multi-layered anodes is found to be superior to the mono-layered anodes. The test cell with a bi-layered anode consisting of 100 mass% Ni0.8Cu0.2/0 mass% GDC (10M/0E) and 70 mass% Ni0.8Cu0.2/30 mass% GDC (7M/3E) exhibits high power density. The test cell with a tri-layered anode consisting of 10M/0E, 7M/3E, and 50 mass% Ni0.8Cu0.2/50 mass% GDC (5M/5E) exhibits an even higher power density, suggesting that 10M/0E and 5M/5E layers contribute to the current collecting part and active part, respectively.

Preparation and characterization of CuInS2 absorber layers by sol-gel method for solar cell applications

NASA Astrophysics Data System (ADS)

Amerioun, M. H.; Ghazi, M. E.; Izadifard, M.; Bahramian, B.

2016-04-01

CuInSe2 , CuInS2 ( CIS2 and CuInGaS2 alloys and their compounds with band gaps between 1.05 and 1.7eV are absorbance materials based on chalcopyrite, in which, because of their suitable direct band gap, high absorbance coefficient and short carrier diffusion are used as absorbance layers in solar cells. In this work, the effects of decrease in p H and thickness variation on characteristics of the CIS2 absorber layers, grown by spin coating on glass substrates, are investigated. Furthermore by using thiourea as a sulphur source in solvent, the sulfurization of layers was done easier than other sulfurization methods. Due to the difficulty in dissolving thiourea in the considered solvent that leads to a fast deposition during the dissolving process, precise conditions are employed in order to prepare the solution. In fact, this procedure can facilitate the sulfurization process of CuIn layers. The results obtained from this investigation indicate reductions in absorbance and band gap in the visible region of the spectrum as a result of decrease in p H. Finally, conductivity of layers is studied by the current vs. voltage curve that represents reduction of electrical resistance with decrease and increase in p H and thickness, respectively.

Tuning the Performance of Organic Spintronic Devices Using X-Ray Generated Traps

DTIC Science & Technology

2012-08-16

observed in organic devices using the same organic semiconductor, namely tris(8-hydroxyquinoli- nato)aluminium ( Alq3 ) [5,15]. Here we will show that the...manufacturing steps were carried out in a deposition chamber located inside a nitrogen glovebox. Next, the organic layer Alq3 (70 to 100 nm) followed by the...As the organic semiconductor spacer layer, the Alq3 layer was fabricated by thermal evaporation in a vacuum of 10Ś mbar at a rate of 0:1 nm=s. The Fe

On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes.

PubMed

Simon, Daniel K; Jordan, Paul M; Mikolajick, Thomas; Dirnstorfer, Ingo

2015-12-30

A controlled field-effect passivation by a well-defined density of fixed charges is crucial for modern solar cell surface passivation schemes. Al2O3 nanolayers grown by atomic layer deposition contain negative fixed charges. Electrical measurements on slant-etched layers reveal that these charges are located within a 1 nm distance to the interface with the Si substrate. When inserting additional interface layers, the fixed charge density can be continuously adjusted from 3.5 × 10(12) cm(-2) (negative polarity) to 0.0 and up to 4.0 × 10(12) cm(-2) (positive polarity). A HfO2 interface layer of one or more monolayers reduces the negative fixed charges in Al2O3 to zero. The role of HfO2 is described as an inert spacer controlling the distance between Al2O3 and the Si substrate. It is suggested that this spacer alters the nonstoichiometric initial Al2O3 growth regime, which is responsible for the charge formation. On the basis of this charge-free HfO2/Al2O3 stack, negative or positive fixed charges can be formed by introducing additional thin Al2O3 or SiO2 layers between the Si substrate and this HfO2/Al2O3 capping layer. All stacks provide very good passivation of the silicon surface. The measured effective carrier lifetimes are between 1 and 30 ms. This charge control in Al2O3 nanolayers allows the construction of zero-fixed-charge passivation layers as well as layers with tailored fixed charge densities for future solar cell concepts and other field-effect based devices.

Growth of periodic nano-layers of nano-crystals of Au, Ag, Cu by ion beam

NASA Technical Reports Server (NTRS)

Smith, Cydale C.; Zheng, B.; Muntele, C. I.; Muntele, I. C.; Ila, D.

2005-01-01

Multilayered thin films of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/, were grown by deposition. We have previously shown that MeV ion Bombardment of multi-nano-layers of SiO2/AU+ SiO2/ produces Au nanocrystals in the AU+ SiO2 layers. An increased number of nano-layers followed by MeV ion bombardment produces a wide optical absorption band, of which its FWHM depends on the number of nano-layers of SiO2/AU+ SiO2/. We have successfully repeated this process for nano-layers of SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/. In this work we used 5 MeV Si as the post deposition bombardment ion and monitored the location as well as the optical absorption's FWHM for each layered structure using Optical Absorption Photospectrometry. The concentration and location of the metal nano-crystals were measured by Rutherford Backscattering Spectrometry. We will report on the results obtained for nano-layered structures produced by post deposition bombardment of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/ layered systems as well as the results obtained from a system containing a periodic combination of SiO2/AU+ SiO2/, SiO2/Ag+ SiO2/, and SiO2/Cu+ SiO2/.

Effect of ultra-thin liner materials on copper nucleation/wetting and copper grain growth

NASA Astrophysics Data System (ADS)

Mueller, Justin E.

One of the key challenges facing future integrated circuit copper (Cu) interconnect manufacturing is to achieve uniform coverage of PVD Cu seed layer at minimum thickness on a liner and barrier. We have therefore characterized the nucleation and wetting of PVD Cu on various liner surfaces by monitoring in-situ the film's electrical conductance during the initial stages of deposition (0 to 25 nm). Our results showed that the Cu wetting is sensitive to the Cu/liner interfacial properties, while the nucleation depends on the liner microstructure. It was found that a ruthenium (Ru) liner has a good Cu wetting characteristic and allows at the onset nearly layer by layer Cu growth. Because of good wetting, Cu growth is not significantly affected by Ru liner grain size. Tantalum (Ta), however, exhibits poor Cu wetting, which results in an initial stage of three dimensional island growth of Cu. In this case, Cu island coalescing occurs sooner, at a smaller Cu film thickness, when the nucleation site density is increased with a smaller grain size Ta liner. To optimize the seed layer's conductance and step coverage, a liner with combined properties of Ta (for adhesion and barrier formation) and Ru (for wetting and grain growth) may be desired. A hybrid magnetron target has been developed for depositing TaRu liner films at various compositions. The microstructure of the compound liners and their effects on the overgrown Cu seed layer over a wide range of TaRu composition is presented. It was found that below 80% Ru concentration, TaRu films are amorphous. An amorphous liner results in poor Cu nucleation as compared with a crystalline Ta or Ru liner. A comparison of the microstructure of thin Cu films deposited on bcc alpha-Ta and tetragonal beta-Ta surfaces has been carried out. Cu resistivity is lower by 10-15%, accompanied by larger Cu grain size, in as-deposited Cu films of various thickness' (30-120 nm) on beta-Ta as compared to those deposited on alpha-Ta. This is due to the presence of an epitaxial relationship between Cu (111) and beta-Ta (002) planes. After annealing, the difference was only seen in films thinner than 60 nm. Results were confirmed when Cu film resistance was measured in-situ during deposition on each phase of Ta liner. Serpentine interconnect line structures of various line widths and aspect ratios were fabricated using either alpha- or beta-Ta liners, and subjected to a similar heat treatment. Results showed a similar ˜10% lower resistivity in the thinnest interconnects (˜40 nm) when a beta-Ta liner was used.

Refractive indices of layers and optical simulations of Cu(In,Ga)Se2 solar cells

PubMed Central

Avancini, Enrico; Losio, Paolo A.; Figi, Renato; Schreiner, Claudia; Bürki, Melanie; Bourgeois, Emilie; Remes, Zdenek; Nesladek, Milos; Tiwari, Ayodhya N.

2018-01-01

Abstract Cu(In,Ga)Se2 based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se2 solar cells with high efficiency. The optical bandgap of Cu(In,Ga)Se2 does not depend on the Cu content in the explored composition range, while the absorption coefficient value is primarily determined by the Cu content. An expression for the absorption spectrum is proposed, with Ga and Cu compositions as parameters. This set of parameters allows accurate device simulations to understand remaining absorption and carrier collection losses and develop strategies to improve performances. PMID:29785230

Interfacial Phenomena in Al/Al, Al/Cu, and Cu/Cu Joints Soldered Using an Al-Zn Alloy with Ag or Cu Additions

NASA Astrophysics Data System (ADS)

Pstruś, Janusz; Gancarz, Tomasz

2014-05-01

The studies of soldered joints were carried out in systems: Al/solder/Al, Al/solder/Cu, Cu/solder/Cu, where the solder was (Al-Zn)EUT, (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Ag and (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Cu addition. Brazing was performed at 500 °C for 3 min. The EDS analysis indicated that the composition of the layers starting from the Cu pad was CuZn, Cu5Zn8, and CuZn4, respectively. Wetting tests were performed at 500 °C for 3, 8, 15, and 30 min, respectively. Thickness of the layers and their kinetics of growth were measured based on the SEM micrographs. The formation of interlayers was not observed from the side of Al pads. On the contrary, dissolution of the Al substrate and migration of Al-rich particles into the bulk of the solder were observed.

L1 0 Fe -Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

NASA Astrophysics Data System (ADS)

Zhang, De-Lin; Sun, Congli; Lv, Yang; Schliep, Karl B.; Zhao, Zhengyang; Chen, Jun-Yang; Voyles, Paul M.; Wang, Jian-Ping

2018-04-01

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultrafast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (PSAFM) structure comprised of a (001) textured Fe -Pd /Ru /Fe -Pd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L1 0 Fe -Pd PSAFM structure shows a large bulk PMA (Ku˜10.2 Merg /cm3 ) and strong antiferromagnetic coupling (-JIEC˜2.60 erg /cm2 ). Full perpendicular magnetic tunnel junctions (PMTJs) with a L1 0 Fe -Pd PSAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to approximately 25% (approximately 60%) are observed at room temperature (5 K) after postannealing at 350 °C . Exhibiting high thermal stabilities and large Ku , the bulk PMTJs with an L1 0 Fe -Pd PSAFM layer could pave a way for next-generation ultrahigh-density and ultralow-energy spintronic applications.

Synthesis and processing of ELISA polymer substitute: The influence of surface chemistry and morphology on detection sensitivity

NASA Astrophysics Data System (ADS)

Hosseini, Samira; Ibrahim, Fatimah; Djordjevic, Ivan; Rothan, Hussin A.; Yusof, Rohana; van der Marel, Cees; Koole, Leo H.

2014-10-01

Despite the known drawbacks of enzyme-linked immunosorbent assay (ELISA), one of the deficiencies that have relatively been ignored is the performance of ELISA substrate itself. Polystyrene (PS), as the cost effective material of choice for mass production of ELISA well-plates, has shown obvious lacks of suitable physical and chemical properties for protein attachment. The general concept of this work was to develop a potential substrate that can be suggested as a material of choice for production of a new generation of ELISA analytical kits. Spin-coated thin films of polymethyl methacrylate-co-methacrylic acid (PMMA-co-MAA) on silicon surfaces were designed and processed for detection of dengue virus. Coated surfaces of different molar ratios have been investigated as carboxyl-functionalized layers for obtaining platform for biomolecule immobilization with high level of protein activity. To improve the sensitivity of detection, we have used amine functional "spacers", hexamethylenediamine (HMDA) and polyethyleneimine (PEI), which were covalently bonded to the surfaces of PMMA-co-MAA coatings. Results demonstrate that the variation of surface concentration of carboxyl groups of PMMA-co-MAA can be used to control the amine surface concentration after carbodiimide coupling with HMDA and PEI spacers. The presence of amine spacers increases hydrophilicity of the coatings and significantly impacts the polymer surface morphology. In particular, protein immobilization via amine-bearing spacers has been achieved in two effective steps: (1) carbodiimide bonding between amine spacer molecules and PMMA-co-MAA polymer coatings; and (2) covalent immobilization of antibody via glutaraldehyde reaction with amine groups from amine-treated surfaces. The application of PEI spacer in comparison to HMDA has shown much higher intensity of detection signal in ELISA experiment, indicating better immobilization efficiency and preservation of antibody activity upon attachment to the polymer surface.

Intermetallic Compound Growth between Electroless Nickel/Electroless Palladium/Immersion Gold Surface Finish and Sn-3.5Ag or Sn-3.0Ag-0.5Cu Solder

NASA Astrophysics Data System (ADS)

Oda, Yukinori; Fukumuro, Naoki; Yae, Shinji

2018-04-01

Using an electroless nickel/electroless palladium/immersion gold (ENEPIG) surface finish with a thick palladium-phosphorus (Pd-P) layer of 1 μm, the intermetallic compound (IMC) growth between the ENEPIG surface finish and lead-free solders Sn-3.5Ag (SA) or Sn-3.0Ag-0.5Cu (SAC) after reflow soldering and during solid-state aging at 150°C was investigated. After reflow soldering, in the SA/ENEPIG and SAC/ENEPIG interfaces, thick PdSn4 layers of about 2 μm to 3 μm formed on the residual Pd-P layers ( 0.5 μm thick). On the SA/ENEPIG interface, Sn was detected on the upper side of the residual Pd-P layer. On the SAC/ENEPIG interface, no Sn was detected in the residual Pd-P layer, and Cu was detected in the interface between the Pd-P and PdSn4 layers. After 300 h of aging at 150°C, the residual Pd-P layers had diffused completely into the solders. In the SA/ENEPIG interface, an IMC layer consisting of Ni3Sn4 and Ni3SnP formed between the PdSn4 layer and the nickel-phosphorus (Ni-P) layer, and a (Pd,Ni)Sn4 layer formed on the lower side of the PdSn4 layer. On the SAC/ENEPIG interface, a much thinner (Pd,Ni)Sn4 layer was observed, and a (Cu,Ni)6Sn5 layer was observed between the PdSn4 and Ni-P layers. These results indicate that Ni diffusion from the Ni-P layer to the PdSn4 layer produced a thick (Pd,Ni)Sn4 layer in the SA solder case, but was prevented by formation of (Cu,Ni)6Sn5 in the SAC solder case. This causes the difference in solder joint reliability between SA/ENEPIG and SAC/ENEPIG interfaces in common, thin Pd-P layer cases.

Effect of Isothermal Aging and Thermal Cycling on Interfacial IMC Growth and Fracture Behavior of SnAgCu/Cu Joints

NASA Astrophysics Data System (ADS)

Li, Xiaoyan; Li, Fenghui; Guo, Fu; Shi, Yaowu

2011-01-01

The growth behavior of interfacial intermetallic compounds (IMCs) of SnAgCu/Cu soldered joints was investigated during the reflow process, isothermal aging, and thermal cycling with a focus on the influence of these parameters on growth kinetics. The SnAgCu/Cu soldered joints were isothermally aged at 125°C, 150°C, and 175°C while the thermal cycling was performed within the temperature ranges from -25°C to 125°C and -40°C to 125°C. It was observed that a Cu6Sn5 layer formed, followed by rapid coarsening at the solder/Cu interface during reflowing. The grain size of the interfacial Cu6Sn5 was found to increase with aging time, and the morphology evolved from scallop-like to needle-like to rod-like and finally to particles. The rod-like Ag3Sn phase was formed on the solder side in front of the previously formed Cu6Sn5 layer. However, when subject to an increase of the aging time, the Cu3Sn phase was formed at the interface of the Cu6Sn5 layer and Cu substrate. The IMC growth rate increased with aging temperature for isothermally aged joints. During thermal cycling, the thickness of the IMC layer was found to increase with the number of thermal cycles, although the growth rate was slower than that for isothermal aging. The dwell time at the high-temperature end of the thermal cycles was found to significantly influence the growth rate of the IMCs. The growth of the IMCs, for both isothermal aging and thermal cycling, was found to be Arrhenius with aging temperature, and the corresponding diffusion factor and activation energy were obtained by data fitting. The tensile strength of the soldered joints decreased with increasing aging time. Consequently, the fracture site of the soldered joints migrated from the solder matrix to the interfacial Cu6Sn5 layer. Finally, the shear strength of the joints was found to decrease with both an increase in the number of thermal cycles and a decrease in the dwell temperature at the low end of the thermal cycle.

Effect of Sn addition on the corrosion behavior of Ti-7Cu-Sn cast alloys for biomedical applications.

PubMed

Tsao, L C

2015-01-01

The aim of this study was to investigate the effects of Sn content on the microstructure and corrosion resistance of Ti7CuXSn (x=0-5 wt.%) samples. The corrosion tests were carried out in 0.9 wt.% NaCl solution at 25 °C. The electrochemical corrosion behavior of the Ti7CuXSn alloy samples was evaluated using potentiodynamic polarization curves, electrochemical impedance spectroscopy (EIS), and equivalent circuit analysis. The resulting impedance parameters and polarization curves showed that adding Sn improved the electrochemical corrosion behavior of the Ti7CuXSn alloy. The Ti7CuXSn alloy samples were composed of a dual-layer oxide consisting of an inner barrier layer and an outer porous layer. Copyright © 2014 Elsevier B.V. All rights reserved.

Method to grow group III-nitrides on copper using passivation layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Qiming; Wang, George T; Figiel, Jeffrey T

Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu.

Binary Oxide p-n Heterojunction Piezoelectric Nanogenerators with an Electrochemically Deposited High p-Type Cu2O Layer.

PubMed

Baek, Seung Ki; Kwak, Sung Soo; Kim, Joo Sung; Kim, Sang Woo; Cho, Hyung Koun

2016-08-31

The high performance of ZnO-based piezoelectric nanogenerators (NGs) has been limited due to the potential screening from intrinsic electron carriers in ZnO. We have demonstrated a novel approach to greatly improve piezoelectric power generation by electrodepositing a high-quality p-type Cu2O layer between the piezoelectric semiconducting film and the metal electrode. The p-n heterojunction using only oxides suppresses the screening effect by forming an intrinsic depletion region, and thus sufficiently enhances the piezoelectric potential, compared to the pristine ZnO piezoelectric NG. Interestingly, a Sb-doped Cu2O layer has high mobility and low surface trap states. Thus, this doped layer is an attractive p-type material to significantly improve piezoelectric performance. Our results revealed that p-n junction NGs consisting of Au/ZnO/Cu2O/indium tin oxide with a Cu2O:Sb (cuprous oxide with a small amount of antimony) layer of sufficient thickness (3 μm) exhibit an extraordinarily high piezoelectric potential of 0.9 V and a maximum output current density of 3.1 μA/cm(2).

Sputter Deposition of Yttrium-Barium Superconductor and Strontium Titanium Oxide Barrier Layer Thin Films

NASA Astrophysics Data System (ADS)

Truman, James Kelly

1992-01-01

The commercial application of superconducting rm YBa_2Cu_3O_{7 -x} thin films requires the development of deposition methods which can be used to reproducibly deposit films with good superconducting properties on insulating and semiconducting substrates. Sputter deposition is the most popular method to fabricate Y-Ba-Cu-O superconductor thin films, but when used in the standard configuration suffers from a deviation between the compositions of the Y-Ba-Cu-O sputter target and deposited films, which is thought to be primarily due to resputtering of the film by negative ions sputtered from the target. In this study, the negative ions were explicitly identified and were found to consist predominantly O^-. The sputter yield of O^- was found to depend on the Ba compound used in the fabrication of Y -Ba-Cu-O targets and was related to the electronegativity difference between the components. An unreacted mixture of rm Y_2O_3, CuO, and BaF_2 was found to have the lowest O^- yield among targets with Y:Ba:Cu = 1:2:3. The high yield of O^- from rm YBa_2Cu_3O _{7-x} was found to depend on the target temperature and be due to the excess oxygen present. The SIMS negative ion data supported the composition data for sputter-deposited Y-Ba-Cu-O films. Targets using BaF _2 were found to improve the Ba deficiency, the run-to-run irreproducibility and the nonuniformity of the film composition typically found in sputtered Y -Ba-Cu-O films. Superconducting Y-Ba-Cu-O films were formed on SrTiO_3 substrates by post-deposition heat treatment of Y-Ba-Cu-O-F films in humid oxygen. The growth of superconducting rm YBa_2Cu_3O_{7-x}, thin films on common substrates such as sapphire or silicon requires the use of a barrier layer to prevent the deleterious interaction which occurs between Y-Ba-Cu-O films and these substrates. Barrier layers of SrTiO_3 were studied and found to exhibit textured growth with a preferred (111) orientation on (100) Si substrates. However, SrTiO_3 was found to be unsuitable as a barrier layer for the growth of rm YBa _2Cu_3O_{7-x}, on Si since Ba reacted with the si after migrating through the SrTiO_3 layer. For sapphire, no textured growth of SrTiO_3 was observed but it was found to be a suitable barrier layer since it prevented any interaction between Y-Ba-Cu-O films and sapphire substrates.

Photocatalytic property and structural stability of CuAl-based layered double hydroxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lv, Ming; Liu, Haiqiang, E-mail: Liuhaiqiang1980@126.com

2015-07-15

Three types of CuMAl layered double hydroxides (LDHs, M=Mg, Zn, Ni) were successfully synthesized by coprecipitation. Powder X-ray diffraction (XRD), inductively coupled plasma atomic emission spectrometry (ICP-AES) and UV–Vis diffuse reflectance spectrum (UV–vis) were used to confirm the formation of as-synthesized solids with good crystal structure. The photocatalytic activity of those LDH materials for CO{sub 2} reduction under visible light was investigated. The experimental results show that CuNiAl-LDHs with narrowest band gap and largest surface areas behave highest efficiency for methanol generation under visible light compared with CuMgAl-LDHs and CuZnAl-LDHs. The CuNiAL-LDH showed high yield for methanol production i.e. 0.210more » mmol/g h, which was high efficient. In addition, the influence of the different M{sup 2+} on the structures and stability of the CuMAl-LDHs was also investigated by analyzing the geometric parameters, electronic arrangement, charge populations, hydrogen-bonding, and binding energies by density functional theory (DFT) analysis. The theoretical calculation results show that the chemical stability of LDH materials followed the order of CuMgAl-LDHs>CuZnAl-LDHs>CuNiAl-LDHs, which is just opposite with the photocatalytic activity and band gaps of three materials. - Graphical abstract: The host–guest calculation models and XRD patterns of CuMAl-LDHs: CuMgAl-LDHs (a), CuZnAl-LDHs (b) and CuNiAl-LDHs (c). - Highlights: • Three types of CuMAl layered double hydroxides (LDHs, M=Mg, Zn, Ni) has been synthesized. • CuMgNi shows narrower band gap and more excellent textural properties than other LDHs. • The band gap: CuMgAl« less

Spray CVD for Making Solar-Cell Absorber Layers

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Harris, Jerry; Jin, Michael H.; Hepp, Aloysius

2007-01-01

Spray chemical vapor deposition (spray CVD) processes of a special type have been investigated for use in making CuInS2 absorber layers of thin-film solar photovoltaic cells from either of two subclasses of precursor compounds: [(PBu3) 2Cu(SEt)2In(SEt)2] or [(PPh3)2Cu(SEt)2 In(SEt)2]. The CuInS2 films produced in the experiments have been characterized by x-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, and four-point-probe electrical tests.

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Raman scattering and attenuated-total-reflection studies of surface-plasmon polaritons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurosawa, K.; Pierce, R.M.; Ushioda, S.

1986-01-15

We have made in situ measurements of attenuated total reflection (ATR) and Raman scattering from a layered structure consisting of a glass prism, a thin silver film, an MgF2 spacer, and a liquid mixture whose refractive index is matched to that of MgF2. When the incident angle of the laser beam coincides with the ATR angle, the surface-plasmon polariton (SPP) of the silver film is excited resonantly and the Raman scattering intensity of the liquid shows a maximum. The same effect is observed at the frequency of the Stokes scattered light. By measuring the decrease of the Raman scattering intensitymore » of the liquid with increase of the thickness of the MgF2 spacer layer, we have determined the decay length (l/sub d/) of the SPP field into the liquid. The measured value of l/sub d/ = 1539 A agrees with the calculated value, 1534 A.« less

Copper(II) perrhenate Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2}: Synthesis from isopropanol and CuReO{sub 4}, structure and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mikhailova, D., E-mail: d.mikhailova@ifw-dresden.de; Institute for Complex Materials, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden; Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, D-01187 Dresden

2015-12-15

The crystal structure of Cu{sup +}Re{sup 7+}O{sub 4} is capable of a quasi-reversible incorporation of C{sub 3}H{sub 7}OH molecules. A room-temperature reaction between CuReO{sub 4} and C{sub 3}H{sub 7}OH under oxidizing conditions leads to the formation of a novel metal-organic hybrid compound Cu{sup 2+}(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2}. Upon heating under reducing conditions, this compound transforms back into CuReO{sub 4}, albeit with ReO{sub 2} and metallic Cu as by-products. The crystal structure of Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2} solved from single-crystal X-ray diffraction (Pbca, a=10.005(3) Å, b=7.833(2) Å, and c=19.180(5) Å) reveals layers of corner-sharing CuO{sub 6}-octahedra andmore » ReO{sub 4}-tetrahedra, whereas isopropyl groups are attached to both sides of these layers, thus providing additional connections within the layers through hydrogen bonds. Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2} is paramagnetic down to 4 K because the spatial arrangement of the Cu{sup 2+} half-filled orbitals prevents magnetic superexchange. The paramagnetic effective moment of 2.0(1) μ{sub B} is slightly above the spin-only value and typical for Cu{sup 2+} ions. - Highlights: • Novel Cu(C{sub 3}H{sub 7}OH){sub 2}(ReO{sub 4}){sub 2} compound has a sequence of inorganic and organic layers. • Hydrogen bonds provide an additional bonding Isopropanol molecules serve as a reducing agent during decomposition. • No direct Cu-O-Re-O-Cu connections via d{sub x2-y2} orbital of Cu{sup 2+} explain paramagnetism. • Hydrogen bonds provide an additional bonding. • Isopropanol molecules serve as a reducing agent during decomposition.« less

Atomic layer epitaxy of YBaCuO for optoelectronic applications

NASA Technical Reports Server (NTRS)

Skogman, R. A.; Khan, M. A.; Van Hove, J. M.; Bhattarai, A.; Boord, W. T.

1992-01-01

An MOCVD-based atomic-layer epitaxy process is being developed as a potential solution to the problems of film-thickness and interface-abruptness control which are encountered when fabricating superconductor-insulator-superconductor devices using YBa2Cu3O(7-x). In initial studies, the atomic-layer MOCVD process yields superconducting YBa2Cu3O(7-x) films with substrate temperatures of 605 C during film growth, and no postdeposition anneal. The low temperature process yields a smooth film surface and can reduce interface degradation due to diffusion.

Structure of Cu/Ni Nanowires Obtained by Matrix Synthesis

NASA Astrophysics Data System (ADS)

Zhigalina, O. M.; Doludenko, I. M.; Khmelenin, D. N.; Zagorskiy, D. L.; Bedin, S. A.; Ivanov, I. M.

2018-05-01

The structure of layered Cu/Ni nanowires obtained by template synthesis in 100-nm channels of track membranes has been investigated by transmission and scanning electron microscopy. The phase composition and main structural features of individual nanowires are determined. It is shown that nanowires consist of alternating Ni ( Fm3m) and Cu ( Fm3m) layers with grains up to 100 nm in size. It is found that nanowires contain also copper oxide crystallites up to 20 nm in size. The elemental composition of individual layers and their mutual arrangement are determined.

Structural Stability of Diffusion Barriers in Cu/Ru/MgO/Ta/Si

PubMed Central

Hsieh, Shu-Huei; Chen, Wen Jauh; Chien, Chu-Mo

2015-01-01

Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resistances, by X-ray diffractometers for their crystal structures, by scanning electron microscopes for their surface morphologies, and by transmission electron microscopes for their cross-section and high resolution views. The results showed that the ultra-thin tri-layer of Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm) is an effective diffusion barrier against the interdiffusion between Cu film and Si substrate. The MgO, and Ta layers as deposited are amorphous. The mechanism for the failure of the diffusion barrier is that the Ru layer first became discontinuous at a high temperature and the Ta layer sequentially become discontinuous at a higher temperature, the Cu atoms then diffuse through the MgO layer and to the substrate at the discontinuities, and the Cu3Si phases finally form. The maximum temperature at which the structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5–3 nm)/Ta (2 nm)/Si are annealed and still have low sheet resistance is from 550 to 750 °C for the annealing time of 5 min and from 500 to 700 °C for the annealing time of 30 min. PMID:28347099

Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface.

PubMed

Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghun

2018-03-07

The next-generation electronic society is dependent on the performance of nonvolatile memory devices, which has been continuously improving. In the last few years, many memory devices have been introduced. However, atomic switches are considered to be a simple and reliable basis for next-generation nonvolatile devices. In general, atomic switch-based resistive switching is controlled by electrochemical metallization. However, excess ion injection from the entire area of the active electrode into the switching layer causes device nonuniformity and degradation of reliability. Here, we propose the fabrication of a high-performance atomic switch based on Cu x -Se 1- x by inserting lanthanide (Ln) metal buffer layers such as neodymium (Nd), samarium (Sm), dysprosium (Dy), or lutetium (Lu) between the active metal layer and the electrolyte. Current-atomic force microscopy results confirm that Cu ions penetrate through the Ln-buffer layer and form thin conductive filaments inside the switching layer. Compared with the Pt/Cu x -Se 1- x /Al 2 O 3 /Pt device, the optimized Pt/Cu x -Se 1- x /Ln/Al 2 O 3 /Pt devices show improvement in the on/off resistance ratio (10 2 -10 7 ), retention (10 years/85 °C), endurance (∼10 000 cycles), and uniform resistance state distribution.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-02-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

NASA Astrophysics Data System (ADS)

Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

2018-05-01

The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

Surface structure and chemistry of Pt/Cu/Pt(1 1 1) near surface alloy model catalyst in CO

NASA Astrophysics Data System (ADS)

Zeng, Shibi; Nguyen, Luan; Cheng, Fang; Liu, Lacheng; Yu, Ying; Tao, Franklin (Feng)

2014-11-01

Near surface alloy (NSA) model catalyst Pt/Cu/Pt(1 1 1) was prepared on Pt(1 1 1) through a controlled vapor deposition of Cu atoms. Different coordination environments of Pt atoms of the topmost Pt layer with the underneath Cu atoms in the subsurface result in different local electronic structures of surface Pt atoms. Surface structure and chemistry of the NAS model catalyst in Torr pressure of CO were studied with high pressure scanning tunneling microscopy (HP-STM) and ambient pressure X-ray photoelectron spectroscopy (AP-XPS). In Torr pressure of CO, the topmost Pt layer of Pt/Cu/Pt(1 1 1) is restructured to thin nanoclusters with size of about 1 nm. Photoemission feature of O 1s of CO on Pt/Cu/Pt(1 1 1) suggests CO adsorbed on both edge and surface of these formed nanoclusters. This surface is active for CO oxidation. Atomic layers of carbon are formed on Pt/Cu/Pt(1 1 1) at 573 K in 2 Torr of CO.

Heterojunction solar cell with 6% efficiency based on an n-type aluminum-gallium-oxide thin film and p-type sodium-doped Cu2O sheet

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2015-02-01

In this paper, we describe efforts to enhance the efficiency of Cu2O-based heterojunction solar cells fabricated with an aluminum-gallium-oxide (Al-Ga-O) thin film as the n-type layer and a p-type sodium (Na)-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing copper sheets. The optimal Al content [X; Al/(Ga + Al) atomic ratio] of an AlX-Ga1-X-O thin-film n-type layer was found to be approximately 2.5 at. %. The optimized resistivity was approximately 15 Ω cm for n-type AlX-Ga1-X-O/p-type Cu2O:Na heterojunction solar cells. A MgF2/AZO/Al0.025-Ga0.975-O/Cu2O:Na heterojunction solar cell with 6.1% efficiency was fabricated using a 60-nm-thick n-type oxide thin-film layer and a 0.2-mm-thick Cu2O:Na sheet with the optimized resistivity.

The General Isothermal Oxidation Behavior of Cu-8Cr-4Nb

NASA Technical Reports Server (NTRS)

Thomas-Ogbuji, L. U.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Oxidation kinetics of Cu-8Cr-4Nb was investigated by TGA (thermogravimetric) exposures between 500 and 900-C (at 25-50 C intervals) and the oxide scale morphologies examined by microscopy and micro-analysis. Because Cu-8Cr-4Nb is comprised of fine Cr2Nb precipitates in a Cu matrix, the results were interpreted by comparison with the behavior of copper (OFHC) and 'NARloy-Z' (a rival candidate material for thrust cell liner applications in advanced rocket engines) under the same conditions. While NARloy-Z and Cu exhibited identical oxidation behavior, Cu-8Cr-4Nb differed markedly in several respects: below approx. 700 C its oxidation rates were significantly lower than those of Cu; At higher temperatures its oxidation rates fell into two categories: an initial rate exceeding that of Cu, and a terminal rate comparable to that of Cu. Differences in oxide morphologies paralleled the kinetic differences at higher temperature: While NARloy-Z and Cu produced a uniform oxide scale of Cu2O inner layer and CuO outer layer, the inner (Cu2O) layer on Cu-8Cr-4Nb was stratified, with a highly porous/spongy inner stratum (responsible for the fast initial kinetics) and a dense/blocky outer stratum (corresponding to the slow terminal kinetics). Single and spinel oxides of Nb and Cr were found at the interface between the oxide scale and Cu-8Cr-4Nb substrate and it appears that these oxides were responsible for its suppressed oxidation rates at the intermediate temperatures. No difference was found between Cu-8Cr-4Nb oxidation in air and in oxygen at 1.0 atm.

Trends and problems in CdS/Cu/x/S thin film solar cells - A review

NASA Astrophysics Data System (ADS)

Martinuzzi, S.

1982-03-01

The methods currently used to fabricate CdS/CuS solar cells are reviewed, along with comparisons of the effects on performance of the various preparation techniques. Attention is given to thermal evaporation, sputter, and chemical spray formation of the CdS layers, noting that most experience is presently with the evaporative and spray processes. CuS layers are formed in dip or wet process chemiplating, electroplating, vacuum deposition in flash and sputter modes, solid state reaction, or spray deposition. Any of the CuS film techniques can be used with any of the CdS layer processes, while spraying and sputtering are noted to offer the best alternatives for industrial production. Band profiles, I-V characteristics, photocurrent levels, and capacitance-voltage characteristics are outlined for the differently formed cells, and CdS/CuS and CdZnS/CuS cells are concluded to exhibit the highest performance features. Areas of improvement necessary to bring the cells to commercial status are discussed.

Solvothermal syntheses and characterization of three new silver(I)/copper(I)-thioarsenates based on As2+/As3+ ions

NASA Astrophysics Data System (ADS)

Yao, Hua-Gang; Tang, Cheng-Fei; An, Yong-Lin; Ou, Zi-Jian; Wu, Guo-Hao; Lan, Pei; Zheng, Yi-Long

2017-02-01

Three new silver(I)/copper(I)-thioarsenates KAgAsIIS2 (1), RbCu2AsIIIS3 (2) and RbCu4AsIIIS4 (3) have been solvothermally synthesized and structurally characterized. 1 exhibits a two-dimensional anionic network built up by As-As bond connecting the left- and right-handed helical [AgS2]4- chains, and represents the first examples of thioarsenates(II). The structure of 2 consists of two kinds of helical [Cu2S3]4- chains linked by the arsenic atoms to form double layers with rubidium ions between the layers. Compound 3 is built up of infinite [Cu2S2]2- chain and layered [Cu6As2S6] linked to form a three-dimensional anionic framework, [Cu4AsS4]-, and containing channels in which the rubidium cations reside. The optical properties of 1-3 have been investigated by UV-vis spectroscopy.

Synthesis, structure and characterization of two new copper(I)-thioarsenates (III) constructed by the [AsS{sub 3}]{sup 3-} and CuS{sub x} units

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, Hua-Gang; Ji, Min; Ji, Shou-Hua

2013-02-15

Two new copper(I)-thioarsenates(III), CsCu{sub 2}AsS{sub 3}(1) and KCu{sub 4}AsS{sub 4}(2), have been synthesized solvothermally in the presence of copper powder. Compound 1 is built up of trigonal AsS{sub 3} pyramid, tetrahedral CuAsS{sub 3} and CuS{sub 3} moieties forming 4-membered, 5-membered and 6-membered rings. The fusion of these rings produces layered anions [Cu{sub 2}AsS{sub 3}]{sup -}, and cesium cations are located between metal-sulfide layers. The structure of 2 consists of infinite [Cu{sub 2}S{sub 2}]{sup 2-} chain and layered [Cu{sub 6}As{sub 2}S{sub 6}] linked to form a three-dimensional anionic framework, [Cu{sub 4}AsS{sub 4}]{sup -}, and containing channels in which the potassium cationsmore » reside. - Graphical abstract: Qne layered CsCu{sub 2}AsS{sub 3} and one framework KCu{sub 4}AsS{sub 4} possessing noncondensed [AsS{sub 3}]{sup 3-} unit have been synthesized solvothermally. The optical band gaps of the two compounds are 2.3 and 1.8 eV, respectively. Highlights: Black-Right-Pointing-Pointer We obtained two new copper(I)-thioarsenate(III), CsCu{sub 2}AsS{sub 3} and KCu{sub 4}AsS{sub 4}. Black-Right-Pointing-Pointer Both compounds possess noncondensed [AsS{sub 3}]{sup 3-} unit and represent new structure types. Black-Right-Pointing-Pointer The optical band gaps of the two compounds are 2.3 eV and 1.8 eV, respectively.« less

Multi-pane glass unit having seal with adhesive and hermetic coating layer

DOEpatents

Miller, Seth A; Stark, David H; Francis, IV, William H; Puligandla, Viswanadham; Boulos, Edward N; Pernicka, John

2015-02-10

A vacuum insulated glass unit (VIGU) comprises a first pane of a transparent material and a second pane of a transparent material. The second pane is spaced apart from the first pane to define a cavity therebetween. At least one of a spacer and an array of stand-off members is disposed between the first and second panes to maintain separation therebetween. A first adhesive layer forms at least a portion of a gas-tight connection between the first pane and the second pane. A highly hermetic coating is disposed over the adhesive layer, where the coating is an inorganic layer.

Synthesis, fluorescence-sensing and molecular logic of two water-soluble 1,8-naphthalimides

NASA Astrophysics Data System (ADS)

Georgiev, Nikolai I.; Dimitrova, Margarita D.; Mavrova, Anelia Ts.; Bojinov, Vladimir B.

2017-08-01

Two novel highly water-soluble fluorescence sensing 1,8-naphthalimides are synthesized and investigated. The novel compounds are designed on the "fluorophore-receptor1-spacer-receptor2" model as a molecular fluorescence probe for determination of cations and anions in 100% aqueous media. The novel probes comprising N-imide and N-phenylpiperazine or morpholine substituents are capable to operate simultaneously via ICT and PET signaling mechanism as a function of pH and to recognize selectively Cu2 + and Hg2 + over the other representative metal ions. Due to the remarkable fluorescence changes in the presence of protons, hydroxyl anions, Hg2 + and Cu2 +, INH and doubly disabled INH logic gates are executed and the systems are able to act as a single output combinatorial logic circuit with four chemical inputs.

In situ atomic-scale imaging of the metal/oxide interfacial transformation

DOE PAGES

Zou, Lianfeng; Li, Jonathan; Zakharov, Dmitri; ...

2017-08-21

Directly probing structure dynamics at metal/oxide interfaces has been a major challenge due to their buried nature.Using environmental transmission electron microscopy,here we report observations of the in-place formation of Cu 2O/Cu interfaces via the oxidation of Cu, and subsequently probe the atomic mechanisms by which interfacial transformation and grain rotation occur at the interfaces during reduction in an H 2 gas environment. The Cu 2O→Cu transformation is observed to occur initially along the Cu 2O/Cu interface in a layer-by-layer manner.The accumulation of oxygen vacancies at the Cu 2O/Cu interface drives the collapse of the Cu 2O lattice near the interfacemore » region, which results in a tilted Cu 2O/Cu interface with concomitant Cu 2O island rotation. Lastly, these results provide unprecedented microscopic detail regarding the redox reactions of supported oxides,which differs fundamentally from the reduction of bulk or isolated oxides that requires the formation of new interfaces between the parent oxide and the reduced phase.« less

Moisture barrier properties of single-layer graphene deposited on Cu films for Cu metallization

NASA Astrophysics Data System (ADS)

Gomasang, Ploybussara; Abe, Takumi; Kawahara, Kenji; Wasai, Yoko; Nabatova-Gabain, Nataliya; Thanh Cuong, Nguyen; Ago, Hiroki; Okada, Susumu; Ueno, Kazuyoshi

2018-04-01

The moisture barrier properties of large-grain single-layer graphene (SLG) deposited on a Cu(111)/sapphire substrate are demonstrated by comparing with the bare Cu(111) surface under an accelerated degradation test (ADT) at 85 °C and 85% relative humidity (RH) for various durations. The change in surface color and the formation of Cu oxide are investigated by optical microscopy (OM) and X-ray photoelectron spectroscopy (XPS), respectively. First-principle simulation is performed to understand the mechanisms underlying the barrier properties of SLG against O diffusion. The correlation between Cu oxide thickness and SLG quality are also analyzed by spectroscopic ellipsometry (SE) measured on a non-uniform SLG film. SLG with large grains shows high performance in preventing the Cu oxidation due to moisture during ADT.

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Ying; Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ; Yaacobi-Gross, Nir

We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronicmore » devices.« less

Disorder-controlled superconductivity at YBa2Cu3O7/SrTiO3 interfaces

NASA Astrophysics Data System (ADS)

Garcia-Barriocanal, J.; Perez-Muñoz, A. M.; Sefrioui, Z.; Arias, D.; Varela, M.; Leon, C.; Pennycook, S. J.; Santamaria, J.

2013-06-01

We examine the effect of interface disorder in suppressing superconductivity in coherently grown ultrathin YBa2Cu3O7 (YBCO) layers on SrTiO3 (STO) in YBCO/STO superlattices. The termination plane of the STO is TiO2 and the CuO chains are missing at the interface. Disorder (steps) at the STO interface cause alterations of the stacking sequence of the intracell YBCO atomic layers. Stacking faults give rise to antiphase boundaries which break the continuity of the CuO2 planes and depress superconductivity. We show that superconductivity is directly controlled by interface disorder outlining the importance of pair breaking and localization by disorder in ultrathin layers.

Method for making high-critical-current-density YBa.sub.2 Cu.sub.3 O.sub.7 superconducting layers on metallic substrates

DOEpatents

Feenstra, Roeland; Christen, David; Paranthaman, Mariappan

1999-01-01

A method is disclosed for fabricating YBa.sub.2 Cu.sub.3 O.sub.7 superconductor layers with the capability of carrying large superconducting currents on a metallic tape (substrate) supplied with a biaxially textured oxide buffer layer. The method represents a simplification of previously established techniques and provides processing requirements compatible with scale-up to long wire (tape) lengths and high processing speeds. This simplification has been realized by employing the BaF.sub.2 method to grow a YBa.sub.2 Cu.sub.3 O.sub.7 film on a metallic substrate having a biaxially textured oxide buffer layer.

Ferromagnetic resonance in coupled permalloy double films separated by a Cu interlayer

NASA Astrophysics Data System (ADS)

Maksymowicz, A. Z.; Whiting, J. S. S.; Watson, M. L.; Chambers, A.

1991-03-01

Ferromagnetic resonance (FMR) at 16 GHz was used to study the magnetic coupling between two-layers of permalloy separated by a nonmagnetic Cu layer. Samples with the same thickness (600 Å) of both permalloy layers were deposited from e-gun sources onto glass substrates in UHV. The thickness d of the Cu interlayer was varied from 5 to 37 Å. The exchange coupling energy ( E = - KM1· M2) model was used to describe the interaction between the two magnetic layers. It was found from the ferromagnetic resonance data in the perpendicular configuration that K( d) follows an exponential law, K = K0e - d/ q, where q = 9.3 Å.

Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer

NASA Astrophysics Data System (ADS)

Singh, Bharti; Mehta, B. R.; Govind, Feng, X.; Müllen, Klaus

2011-11-01

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect.

CuGaS₂ and CuGaS₂-ZnS Porous Layers from Solution-Processed Nanocrystals.

PubMed

Berestok, Taisiia; Guardia, Pablo; Estradé, Sònia; Llorca, Jordi; Peiró, Francesca; Cabot, Andreu; Brock, Stephanie L

2018-04-05

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS₂ (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS-ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs.

Lithium Nitride Synthesized by in situ Lithium Deposition and Ion Implantation for Boron Neutron Capture Therapy

NASA Astrophysics Data System (ADS)

Ishitama, Shintaro; Baba, Yuji; Fujii, Ryo; Nakamura, Masaru; Imahori, Yoshio

Li3N synthesis on Li deposition layer was conducted without H2O and O2 by in situ lithium deposition in high vacuum chamber of 10-6 Pa and ion implantation techniques and the thermo-chemical stability of the Li3N/Li/Cu tri-layered target for Boron Neutron Capture Therapy (BNCT) under laser heating and air exposure was characterized by X-ray photoelectron spectroscopy (XPS). Following conclusions were derived; (1) Li3N/Li/Cu tri-layered target with very low oxide and carbon contamination was synthesized by in situ lithium vacuum deposition and N2+ ion implantation without H2O and O2 additions, (2) The starting temperature of evaporation of Li3N/Li/Cu tri-layered target increased by 120K compared to that of the Li/Cu target and (3) Remarkable oxidation and carbon contamination were observed on the surface of Li3N/Li/Cu after air exposure and these contaminated compositions was not removed by Ar+ heavy sputtering.

1D Cu(OH)2 nanorod/2D SnO2 nanosheets core/shell structured array: Covering with graphene layer leads to excellent performances on lithium-ion battery

NASA Astrophysics Data System (ADS)

Xia, Huicong; Zhang, Jianan; Chen, Zhimin; Xu, Qun

2018-05-01

A facile in-situ growth strategy is employ to achieving the two-dimensional SnO2 nanosheets/one-dimensional Cu(OH)2 nanorods nanoarchitecture on Cu foil current collector (SnO2/Cu(OH)2/Cu foil), follow by modification of a uniform layer of graphene (G). Confine with the graphene layer and unique one-dimensional/two-dimensional the nanoarchitecture, the remarkably enhance electrical conductivity and structural stability of G/SnO2/Cu(OH)2/Cu foil leads to a high reversible capacity of 1080.6 mAh g-1 at a current density of 200 mA g-1, much better than the samples without graphene (512.6 mAh g-1) and Cu(OH)2 nanorod (117.4 mAh g-1). Furthermore, G/SnO2/Cu(OH)2/Cu foil electrode shows high rate capacity (600.8 mAh g-1 at 1 A g-1) and excellent cycling stability (1057.1 mAh g-1 at 200 mA g-1 even after 500 cycles). This work highlights that increasing surface and interface effects with desirable three-dimensional nanoarchitecture can open a new avenue to electrochemical performance improvement in lithium-ion battery for SnO2-base anode.

Co layer fragmentation effect on magnetoresistive and structural properties of nanogranular Co/Cu multilayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spizzo, F.; Ronconi, F.; Ferrero, C.

We deposited nanogranular Co/Cu multilayers made of thin fragmented Co layers separated by thicker Cu layers to study how the structure and the microstructure of magnetic nanogranular samples change as the average particle size is reduced and how these changes affect the giant magnetoresistive response of the samples. Indeed, thanks to the vertical periodicity of the structure, namely, to the fact that Co/Cu interfaces display an ordered stacking and are not randomly distributed within the samples as in conventional granular materials, their self-correlation and cross correlation can be investigated. In this way, the characteristic length scale of the Co/Cu interfacialmore » roughness that is strictly related to the giant magnetoresistive response of the samples and the universality class of the growth mechanism that affects the systems structure can be both accessed. The Co/Cu nanogranular multilayers were characterized using different x-ray techniques, from specular reflectivity, which allows to probe the multilayer development in the vertical direction, to grazing incidence small angle diffuse scattering, which provides information on the self-correlation and cross correlation of the Co/Cu interfaces. Furthermore, diffraction measurements indicate that the degree of structural disorder increases by decreasing the thickness of the Co layers. Magnetoresistive and magnetization measurements are as well presented and discussed with the results of the structural characterization.« less

Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements

PubMed Central

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C

2012-01-01

Summary Recently, the compound semiconductor Cu3BiS3 has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu3BiS3 absorber layer and the junction formation with CdS, ZnS and In2S3 buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20–100 nm, and a considerably smaller work-function distribution for In2S3 compared to that of CdS and ZnS. For In2S3 and CdS buffer layers the KPFM experiments indicate negatively charged Cu3BiS3 grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In2S3 buffer layer. Our findings indicate that Cu3BiS3 may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased. PMID:22497001

Junction formation of Cu(3)BiS(3) investigated by Kelvin probe force microscopy and surface photovoltage measurements.

PubMed

Mesa, Fredy; Chamorro, William; Vallejo, William; Baier, Robert; Dittrich, Thomas; Grimm, Alexander; Lux-Steiner, Martha C; Sadewasser, Sascha

2012-01-01

Recently, the compound semiconductor Cu(3)BiS(3) has been demonstrated to have a band gap of ~1.4 eV, well suited for photovoltaic energy harvesting. The preparation of polycrystalline thin films was successfully realized and now the junction formation to the n-type window needs to be developed. We present an investigation of the Cu(3)BiS(3) absorber layer and the junction formation with CdS, ZnS and In(2)S(3) buffer layers. Kelvin probe force microscopy shows the granular structure of the buffer layers with small grains of 20-100 nm, and a considerably smaller work-function distribution for In(2)S(3) compared to that of CdS and ZnS. For In(2)S(3) and CdS buffer layers the KPFM experiments indicate negatively charged Cu(3)BiS(3) grain boundaries resulting from the deposition of the buffer layer. Macroscopic measurements of the surface photovoltage at variable excitation wavelength indicate the influence of defect states below the band gap on charge separation and a surface-defect passivation by the In(2)S(3) buffer layer. Our findings indicate that Cu(3)BiS(3) may become an interesting absorber material for thin-film solar cells; however, for photovoltaic application the band bending at the charge-selective contact has to be increased.

High-performance ultraviolet detection and visible-blind photodetector based on Cu{sub 2}O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw; Center for Micro/Nano Science and Technology, National Cheng Kung University, One University Road, Tainan 701, Taiwan; Lin, Hsueh-Pin

This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu{sub 2}O film and ZnO nanorods (NRs). The PVK layer acts as an electron-blocking/hole-transporting layer between the n-ZnO and p-Cu{sub 2}O films. The Cu{sub 2}O/PVK/ZnO NR photodetector exhibited a responsivity of 13.28 A/W at 360 nm, a high detectivity of 1.03 × 10{sup 13} Jones at a low bias of −0.1 V under a low UV light intensity of 24.9 μW/cm{sup 2}. The photo-to-dark current ratios of the photodetector with and without the PVK intermediate layer at a bias of −0.5 V are 1.34 × 10{supmore » 2} and 3.99, respectively. The UV-to-visible rejection ratios (R{sub 360 nm}/R{sub 450 nm}) are 350 and 1.735, respectively. Several features are demonstrated: (a) UV photo-generated holes at the ZnO NRs can effectively be transported through the PVK layer to the p-Cu{sub 2}O layer; (b) the insertion of a PVK buffer layer significantly minimizes the reverse-bias leakage current, which leads to a larger amplification of the photocurrent; and (c) the PVK buffer layer greatly improves the UV-to-visible responsivity ratio, allowing the device to achieve high UV detection sensitivity at a low bias voltage using a very low light intensity.« less

Copper oxide/N-silicon heterojunction photovoltaic device

DOEpatents

Feng, Tom; Ghosh, Amal K.

1982-01-01

A photovoltaic device having characteristics of a high efficiency solar cell comprising a Cu.sub.x O/n-Si heterojunction. The Cu.sub.x O layer is formed by heating a deposited copper layer in an oxygen containing ambient.

Formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment in an atomic hydrogen flux

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erofeev, E. V., E-mail: erofeev@micran.ru; Kazimirov, A. I.; Fedin, I. V.

The systematic features of the formation of the low-resistivity compound Cu{sub 3}Ge by low-temperature treatment of a Cu/Ge two-layer system in an atomic hydrogen flux are studied. The Cu/Ge two-layer system is deposited onto an i-GaAs substrate. Treatment of the Cu/Ge/i-GaAs system, in which the layer thicknesses are, correspondingly, 122 and 78 nm, in atomic hydrogen with a flux density of 10{sup 15} at cm{sup 2} s{sup –1} for 2.5–10 min at room temperature induces the interdiffusion of Cu and Ge, with the formation of a polycrystalline film containing the stoichiometric Cu{sub 3}Ge phase. The film consists of vertically orientedmore » grains 100–150 nm in size and exhibits a minimum resistivity of 4.5 µΩ cm. Variations in the time of treatment of the Cu/Ge/i-GaAs samples in atomic hydrogen affect the Cu and Ge depth distribution, the phase composition of the films, and their resistivity. Experimental observation of the synthesis of the Cu{sub 3}Ge compound at room temperature suggests that treatment in atomic hydrogen has a stimulating effect on both the diffusion of Cu and Ge and the chemical reaction of Cu{sub 3}Ge-compound formation. These processes can be activated by the energy released upon the recombination of hydrogen atoms adsorbed at the surface of the Cu/Ge/i-GaAs sample.« less

A copper-based layered coordination polymer: synthesis, magnetic properties and electrochemical performance in supercapacitors.

PubMed

Liu, Qi; Liu, Xiuxiu; Shi, Changdong; Zhang, Yanpeng; Feng, Xuejun; Cheng, Mei-Ling; Su, Seng; Gu, Jiande

2015-11-28

A copper-based layered coordination polymer ([Cu(hmt)(tfbdc)(H2O)]; hmt = hexamethylenetetramine, tfbdc = 2,3,5,6-tetrafluoroterephthalate; Cu-LCP) has been synthesized, and it has been structurally and magnetically characterized. The Cu-LCP shows ferromagnetic interactions between the adjacent copper(II) ions. Density functional theory calculations on the special model of Cu-LCP support the occurrence of ferromagnetic interactions. As an electrode material for supercapacitors, Cu-LCP exhibits a high specific capacitance of 1274 F g(-1) at a current density of 1 A g(-1) in 1 M LiOH electrolyte, and the capacitance retention is about 88% after 2000 cycles.

Imaging the in-plane distribution of helium precipitates at a Cu/V interface

DOE PAGES

Chen, Di; Li, Nan; Yuryev, Dina; ...

2017-02-15

Here, we describe a transmission electron microscopy investigation of the distribution of helium precipitates within the plane of an interface between Cu and V. Statistical analysis of precipitate locations reveals a weak tendency for interfacial precipitates to align alongmore » $$\\langle$$110$$\\rangle$$-type crystallographic directions within the Cu layer. Comparison of these findings with helium-free Cu/V interfaces suggests that the precipitates may be aggregating preferentially along atomic-size steps in the interface created by threading dislocations in the Cu layer. Our observations also suggest that some precipitates may be aggregating along intersections between interfacial misfit dislocations.« less

Copper Accumulation, Availability and Adsorption Capacity in Sandy Soils of Vineyards with Different Cultivation Duration

NASA Astrophysics Data System (ADS)

Mallmann, F. J. K.; Miotto, A.; Bender, M. A.; Gubiani, E.; Rheinheimer, D. D. S.; Kaminski, J.; Ceretta, C. A.; Šimůnek, J.

2015-12-01

Bordeaux mixture is a copper-based (Cu) fungicide and bactericide applied in vineyards to control plant diseases. Since it is applied several times per year, it accumulates in large quantities on plants and in soil. This study evaluates the Cu accumulation in, and desorption kinetics and adsorption capability of a sandy Ultisol in a natural field and in 3 vineyards for 5 (V1), 11 (V2), and 31 (V3) years in South of Brazil. Soil samples were collected in 8 depths (0-60 cm) of all four soil profiles, which all displayed similar soil properties. The following soil properties were measured: pH, organic matter (OM), soil bulk density, Cu total concentration, and Cu desorption and adsorption curves. A two first-order reactions model and the Langmuir isotherm were fitted to the desorption and adsorption curves, respectively. An increase in the total mass of Cu in the vineyards followed a linear regression curve, with an average annual increase of 7.15 kg ha-1. Cu accumulated down to a depth of 5, 20, and 30 cm in V1, V2 and V3, respectively, with the highest Cu content reaching 138.4 mg kg-1 in the 0-5 cm soil layer of V3. Cu desorption parameters showed a high correlation with its total concentration. Approximately 57 and 19% of total Cu were immediately and slowly available, respectively, indicating a high potential for plant absorption and/or downward movement. Cu concentrations extracted by EDTA from soil layers not affected by anthropogenic Cu inputs were very low. The maximum Cu adsorption capacity of the 0-5 and 5-10 cm soil layers increased with the vineyard age, reaching concentrations higher than 900 mg kg-1. This increase was highly related to OM and pH, which both increased with cultivation duration. Despite of low clay content of these soils, there is low risk of groundwater Cu contamination for actual conditions. However, high Cu concentrations in the surface layer of the long-term vineyards could cause toxicity problems for this and for companion crops.

Ultrasonic soldering of Cu alloy using Ni-foam/Sn composite interlayer.

PubMed

Xiao, Yong; Wang, Qiwei; Wang, Ling; Zeng, Xian; Li, Mingyu; Wang, Ziqi; Zhang, Xingyi; Zhu, Xiaomeng

2018-07-01

In this study, Cu alloy joints were fabricated with a Ni-foam reinforced Sn-based composite solder with the assistance of ultrasonic vibration. Effects of ultrasonic soldering time on the microstructure and mechanical properties of Cu/Ni-Sn/Cu joints were investigated. Results showed that exceptional metallurgic bonding could be acquired with the assistance of ultrasonic vibration using a self-developed Ni-foam/Sn composite solder. For joint soldered for 5 s, a (Cu,Ni) 6 Sn 5 intermetallic compound (IMC) layer was formed on the Cu substrate surface, Ni skeletons distributed randomly in the soldering seam and a serrated (Ni,Cu) 3 Sn 4 IMC layer was formed on the Ni skeleton surface. Increasing the soldering time to 20 s, the (Ni,Cu) 3 Sn 4 IMC layer grew significantly and exhibited a loose porous structure on the Ni skeleton surface. Further increase the soldering time to 30 s, Ni skeletons were largely dissolved in the Sn base solder, and micro-sized (Ni,Cu) 3 Sn 4 particles were formed and dispersed homogeneously in the soldering seam. The formation of (Ni,Cu) 3 Sn 4 particles was mainly ascribed to acoustic cavitations induced erosion and grain refining effects. The joint soldered for 30 s exhibited the highest shear strength of 64.9 ± 3.3 MPa, and the shearing failure mainly occurred at the soldering seam/Cu substrate interface. Copyright © 2018 Elsevier B.V. All rights reserved.

Mechanism of abnormally slow crystal growth of CuZr alloy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yan, X. Q.; Lü, Y. J., E-mail: yongjunlv@bit.edu.cn; State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027

2015-10-28

Crystal growth of the glass-forming CuZr alloy is shown to be abnormally slow, which suggests a new method to identify the good glass-forming alloys. The crystal growth of elemental Cu, Pd and binary NiAl, CuZr alloys is systematically studied with the aid of molecular dynamics simulations. The temperature dependence of the growth velocity indicates the different growth mechanisms between the elemental and the alloy systems. The high-speed growth featuring the elemental metals is dominated by the non-activated collision between liquid-like atoms and interface, and the low-speed growth for NiAl and CuZr is determined by the diffusion across the interface. Wemore » find that, in contrast to Cu, Pd, and NiAl, a strong stress layering arisen from the density and the local order layering forms in front of the liquid-crystal interface of CuZr alloy, which causes a slow diffusion zone. The formation of the slow diffusion zone suppresses the interface moving, resulting in much small growth velocity of CuZr alloy. We provide a direct evidence of this explanation by applying the compressive stress normal to the interface. The compression is shown to boost the stress layering in CuZr significantly, correspondingly enhancing the slow diffusion zone, and eventually slowing down the crystal growth of CuZr alloy immediately. In contrast, the growth of Cu, Pd, and NiAl is increased by the compression because the low diffusion zones in them are never well developed.« less

Comparative Study of ENIG and ENEPIG as Surface Finishes for a Sn-Ag-Cu Solder Joint

NASA Astrophysics Data System (ADS)

Yoon, Jeong-Won; Noh, Bo-In; Jung, Seung-Boo

2011-09-01

Interfacial reactions and joint reliability of Sn-3.0Ag-0.5Cu solder with two different surface finishes, electroless nickel-immersion gold (ENIG) and electroless nickel-electroless palladium-immersion gold (ENEPIG), were evaluated during a reflow process. We first compared the interfacial reactions of the two solder joints and also successfully revealed a connection between the interfacial reaction behavior and mechanical reliability. The Sn-Ag-Cu/ENIG joint exhibited a higher intermetallic compound (IMC) growth rate and a higher consumption rate of the Ni(P) layer than the Sn-Ag-Cu/ENEPIG joint. The presence of the Pd layer in the ENEPIG suppressed the growth of the interfacial IMC layer and the consumption of the Ni(P) layer, resulting in the superior interfacial stability of the solder joint. The shear test results show that the ENIG joint fractured along the interface, exhibiting indications of brittle failure possibly due to the brittle IMC layer. In contrast, the failure of the ENEPIG joint only went through the bulk solder, supporting the idea that the interface is mechanically reliable. The results from this study confirm that the Sn-Ag-Cu/ENEPIG solder joint is mechanically robust and, thus, the combination is a viable option for a Pb-free package system.

Multilayer Regulation of Atomic Boron Nitride Films to Improve Oxidation and Corrosion Resistance of Cu.

PubMed

Ren, Siming; Cui, Mingjun; Pu, Jibin; Xue, Qunji; Wang, Liping

2017-08-16

The boron nitride (BN) monolayer (1L) with high impermeability and resistivity seems to hold promise as a long-term corrosion barrier for Cu under ambient condition, which is supported by recent researches. Here, we perform a complete study of the alternating temperature tests (the sample is exposed in air for 30 days and subsequently heated at 200 °C for 2 h) and electrochemical measurements on 1L and multilayer BN-coated Cu foils. Results imply that the BN-coated Cu foils are less oxidized than uncoated Cu foils after alternating temperature tests, regardless of the layers of BN. Particularly, the oxidation process proceeds slowly in multilayers because most of the underlying defects are covered with BN layers to suppress the oxygen diffusion in the vertical direction and the oxidation mainly occurs on the wrinkled region of BN films. Electrochemical analyses reveal that the BN layers provide an effective physical barrier against the corrosive medium and inhibit the electron diffusion because of their high electrical insulating behavior and the corrosion resistance of the samples increases with increasing BN layers. These findings indicate that BN films with adequate layers are good candidates for oxidation and corrosion protection at the atomic level, which is vital to many industrial and academic applications.

Influences of alkaline earth metal substitution on the crystal structure and physical properties of magnetic RuSr1.9A0.1GdCu2O8 (A = Ca, Sr, and Ba) superconductors.

PubMed

Hur, Su Gil; Park, Dae Hoon; Hwang, Seong-Ju; Kim, Seung Joo; Lee, J H; Lee, Sang Young

2005-11-24

We have investigated the effect of alkaline earth metal substitution on the crystal structure and physical properties of magnetic superconductors RuSr(1.9)A(0.1)GdCu(2)O(8) (A = Ca, Sr, and Ba) in order to probe an interaction between the magnetic coupling of the RuO(2) layer and the superconductivity of the CuO(2) layer. X-ray diffraction and X-ray absorption spectroscopic analyses demonstrate that the isovalent substitution of Sr ions with Ca or Ba ions makes it possible to tune the interlayer distance between the CuO(2) and the RuO(2) layers. From the measurements of electrical resistance and magnetic susceptibility, it was found that, in contrast to negligible change of magnetization, both of the alkaline earth metal substitutions lead to a notable depression of zero-resistance temperature T(c) (DeltaT(c) approximately 17-19 K). On the basis of the absence of a systematic correlation between the T(c) and the interlayer distance/magnetization, we have concluded that the internal magnetic field of the RuO(2) layer has insignificant influence on the superconducting property of the CuO(2) layer in the ruthenocuprate.

Apparently enhanced magnetization of Cu(I)-modified γ-Fe2O3 based nanoparticles

NASA Astrophysics Data System (ADS)

Qiu, Xiaoyan; He, Zhenghong; Mao, Hong; Zhang, Ting; Lin, Yueqiang; Liu, Xiaodong; Li, Decai; Meng, Xiangshen; Li, Jian

2017-11-01

Using a chemically induced transition method in FeCl2 solution, γ-Fe2O3 based magnetic nanoparticles, in which γ-Fe2O3 crystallites were coated with FeCl3ṡ6H2O, were prepared. During the synthesis of the γ-Fe2O3 nanoparticles Cu(I) modification of the particles was attempted. According to the results from both magnetization measurements and structural characterization, it was judged that a magnetic silent "dead layer", which can be attributed to spin disorder in the surface of the γ-Fe2O3 crystallites due to breaking of the crystal symmetry, existed in the unmodified particles. For the Cu(I)-modified sample, the CuCl thin layer on the γ-Fe2O3 crystallites incurred the crystal symmetry to reduce the spin disorder, which "awakened" the "dead layer" on the surface of the γ-Fe2O3 crystallites, enhancing the apparent magnetization of the Cu(I)-modified nanoparticles. It was determined that the surface spin disorder of the magnetic crystallite could be related to the coating layer on the crystallite, and can be modified by altering the coating layer to enhance the effective magnetization of the magnetic nanoparticles.

Antiferromagnetic exchange and magnetoresistance enhancement in ultrathin Co-Re sandwiches

NASA Astrophysics Data System (ADS)

Freitas, P. P.; Melo, L. V.; Trindade, I.; From, M.

1992-10-01

Co-Re ultrathin sandwiches were prepared that show antiferromagnetic coupling and enhanced saturation magnetoresistance for Re spacer thicknesses below 9 Å. A field of 2.5 kOe is needed to saturate the antiferromagnetically coupled Co layers. These results are similar to those found in Co-Re superlattices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polyakova, I. N., E-mail: polyakova@igic.ras.ru; Poznyak, A. L.; Sergienko, V. S.

Four Cu(II) complexes with the RR,SS-Edds{sup 4-} and SS-HEdds{sup 3-} anions are synthesized, and their crystal structures are studied. In the compounds [Cu2(RR,SS-Edds)] . 6H{sub 2}O (I) and Ba2[Cu(RR,SS-Edds)](ClO{sub 4}){sub 2} . 8H{sub 2}O (II), the ligand forms hexacoordinate chelate [Cu(Edds)]{sup 2-} complexes with the N atoms and O atoms of the propionate groups in the equatorial positions and the O atoms of the acetate groups in the axial vertices. In the compounds Ba[Cu(SS-HEdds)]ClO{sub 4} . 2H{sub 2}O (III) and Ba3[Cu2(RR,SS-Edds){sub 2}](ClO{sub 4}){sub 2} . 6H{sub 2}O (IV), one of the propionate arms, the protonated arm in III and themore » deprotonated arm in IV, does not enter into the coordination sphere of the Cu atom. An acetate arm moves to its position in the equatorial plane, and the free axial vertex is occupied by an O atom of the perchlorate ion. In I-IV, the lengths of the equatorial Cu-N and Cu-O bonds fall in the ranges 1.970-2.014 and 1.921-1.970 A, respectively. The axial Cu-O bonds with the acetate groups and ClO{sub 4}{sup -} anions are elongated to 2.293-2.500 and 2.727-2.992 A, respectively. In structure I, the second Cu atom acts as a counterion forming bonds with the O atoms of two water molecules and three O atoms of the Edds ligands. In II-IV, the Ba{sup 2+} cations are hydrated and bound to the O atoms of the anionic complexes and (except for one of the cations in IV) ClO{sub 4}{sup -} anions. The coordination number of the Ba cations is nine. The structural units in I-IV are connected into layers. In I, an extended system of hydrogen bonds links the layers into a framework. In II and III, the layers are linked only by weak hydrogen bonds, one bond per structural unit. In IV, ClO{sub 4}{sup -} anions are bound to the Ba and Cu atoms of neighboring layers, thus serving as bridges between the layers.« less

Stacked multilayers of alternating reduced graphene oxide and carbon nanotubes for planar supercapacitors.

PubMed

Moon, Geon Dae; Joo, Ji Bong; Yin, Yadong

2013-12-07

A simple layer-by-layer approach has been developed for constructing 2D planar supercapacitors of multi-stacked reduced graphene oxide and carbon nanotubes. This sandwiched 2D architecture enables the full utilization of the maximum active surface area of rGO nanosheets by using a CNT layer as a porous physical spacer to enhance the permeation of a gel electrolyte inside the structure and reduce the agglomeration of rGO nanosheets along the vertical direction. As a result, the stacked multilayers of rGO and CNTs are capable of offering higher output voltage and current production.

Control of Low-Field Hysteresis Loop Shift of Spin Valves

NASA Astrophysics Data System (ADS)

Chernyshova, T. A.; Milyaev, M. A.; Naumova, L. I.; Proglyado, V. V.; Maksimova, I. K.; Pavlova, A. Yu.; Blagodatkov, D. V.; Ustinov, V. V.

2017-12-01

Spin valves that comprise synthetic antiferromagnet as a component of pinned layer and an exchange-coupled ferromagnet/Ru/ferromagnet structure in the free layer have been prepared by magnetron sputtering. Microobjects have been formed from spin valves by optical and electron-beam lithography. It has been shown that the shift of the low-field magnetoresistance hysteresis loop decreases as the thicknes of the Ru spacer in the free layer of spin valve increases. The almost hysteresis-free odd-field dependences of the magnetoresistance were obtained for micron-sized samples; in this case, the sensitivity is 0.2%/Oe.

Spacer layer thickness dependent structural and magnetic properties of Co/Si multilayers

NASA Astrophysics Data System (ADS)

Roy, Ranjan; Singh, Dushyant; Kumar, M. Senthil

2018-05-01

In this article, the study of high resolution x-ray diffraction and magnetization of sputter deposited Co/Si multilayer is reported. Multilayers are prepared at ambient temperature by dc magnetron sputtering. Structural properties are studied by high resolution x-ray diffraction. Magnetic properties are studied at room temperature by vibrating sample magnetometer. Structural properties show that the Co layer is polycrystalline and the Si layer is amorphous. The magnetization study indicates that the samples are soft ferromagnetic in nature. The study of magnetization also shows that the easy axis of magnetization lies in the plane of the film.

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.

2016-01-07

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupledmore » plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.« less

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

2016-01-01

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

Stabilization of the O p2x2 phase on Cu(001) sheltered by wrinkled BN over-layer

NASA Astrophysics Data System (ADS)

Kim, Yong-Sung; Ma, Chuanxu; Li, An-Ping; Yoon, Mina

The 2 √3x √3R45°phase of oxygen (O) on the Cu(001) surface has been observed in scanning tunneling microscopy (STM) measurements. Although the p2x2 phase of O on the Cu(001) surface has been proposed theoretically to be the most stable in O-lean conditions, it has not been observed in experiments for a long time. Recently, the O p2x2 phase has been found in STM on the Cu(001) surface with an overlying BN monolayer. In this theoretical study, we investigate what the role of BN over-layer is to stabilize the O p2x2 phase on the Cu(001) surface. The BN over-layer is lattice-matched with the Cu(001) surface and the BN mono-layer sheet is periodically wrinkled along the BN arm-chair direction and along the [100] or [010] direction on the Cu(001) surface. The interlayer space between the Cu(001) surface and the bulge of the wrinkled BN sheet is found to play as a preferential shelter for O to be adsorbed, and the boundary of the BN inner wall along the [010] or [100] direction makes the p2x2 phase more favorable against the 45°-tilted 2 √3x √3R45°phase of O on the Cu(001) surface. This was supported by Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility, and the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, maaged by UT-Battelle, LLC, for the U. S. DOE.

Organic solar cells using a ZnO/Cu/ZnO anode deposited by ion beam sputtering at room temperature for flexible devices.

PubMed

El Hajj, Ahmad; Lucas, Bruno; Barbot, Anthony; Antony, Rémi; Ratier, Bernard; Aldissi, Matt

2013-07-01

The development of indium-free transparent conductive oxides (TCOs) on polymer substrates for flexible devices requires deposition at low temperatures and a limited thermal treatment. In this paper, we investigated the optical and electrical properties of ZnO/Cu/ZnO multi-layer electrodes obtained by ion beam sputtering at room temperature for flexible optoelectronic devices. This multilayer structure has the advantage of adjusting the layer thickness to favor antireflection and surface plasmon resonance of the metallic layer. We found that the optimal electrode is made up of a 10 nm-thick Cu layer between two 40 nm-thick ZnO layers, which results in a sheet resistance of 12 omega/(see symbol), a high transmittance of 85% in the visible range, and the highest figure of merit of 5.4 x 10(-3) (see symbol)/omega. A P3HT:PCBM-based solar cell showed a power conversion efficiency (PCE) of 2.26% using the optimized ZnO (40 nm)/Cu (10 nm)/ZnO (40 nm) anode.

Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms.

PubMed

Koenig, Steven P; Doganov, Rostislav A; Seixas, Leandro; Carvalho, Alexandra; Tan, Jun You; Watanabe, Kenji; Taniguchi, Takashi; Yakovlev, Nikolai; Castro Neto, Antonio H; Özyilmaz, Barbaros

2016-04-13

Few-layer black phosphorus is a monatomic two-dimensional crystal with a direct band gap that has high carrier mobility for both holes and electrons. Similarly to other layered atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is sensitive to surface impurities, adsorbates, and adatoms. Here we study the effect of Cu adatoms onto few-layer black phosphorus by characterizing few-layer black phosphorus field effect devices and by performing first-principles calculations. We find that the addition of Cu adatoms can be used to controllably n-dope few layer black phosphorus, thereby lowering the threshold voltage for n-type conduction without degrading the transport properties. We demonstrate a scalable 2D material-based complementary inverter which utilizes a boron nitride gate dielectric, a graphite gate, and a single bP crystal for both the p- and n-channels. The inverter operates at matched input and output voltages, exhibits a gain of 46, and does not require different contact metals or local electrostatic gating.

CuGaS2 and CuGaS2–ZnS Porous Layers from Solution-Processed Nanocrystals

PubMed Central

Guardia, Pablo; Estradé, Sònia; Peiró, Francesca; Cabot, Andreu

2018-01-01

The manufacturing of semiconducting films using solution-based approaches is considered a low cost alternative to vacuum-based thin film deposition strategies. An additional advantage of solution processing methods is the possibility to control the layer nano/microstructure. Here, we detail the production of mesoporous CuGaS2 (CGS) and ZnS layers from spin-coating and subsequent cross-linking through chalcogen-chalcogen bonds of properly functionalized nanocrystals (NCs). We further produce NC-based porous CGS/ZnS bilayers and NC-based CGS–ZnS composite layers using the same strategy. Photoelectrochemical measurements are used to demonstrate the efficacy of porous layers, and particularly the CGS/ZnS bilayers, for improved current densities and photoresponses relative to denser films deposited from as-produced NCs. PMID:29621198

Molecular charge distribution and dispersion of electronic states in the contact layer between pentacene and Cu(119) and beyond

NASA Astrophysics Data System (ADS)

Annese, E.; Fujii, J.; Baldacchini, C.; Zhou, B.; Viol, C. E.; Vobornik, I.; Betti, M. G.; Rossi, G.

2008-05-01

The interaction of pentacene molecules in contact with the Cu(119) stepped surface has been directly imaged by scanning tunneling microscopy and analyzed by angle resolved photoemission spectroscopy. Interacting molecules, which are in contact with copper, generate dispersive electronic states associated with a perturbed electron charge density distribution of the molecular orbitals. In contrast, the electron charge density of molecules of the pentacene on top of the first layer, which is not in direct contact with the Cu surface, shows an intramolecular structure very similar to that of the free molecule. Our results indicate that the delocalization of the molecular states in the pentacene/Cu system is confined to the very first molecular layer at the interface.

Cu-doped CdS and its application in CdTe thin film solar cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Yi; College of Electronic and Information Engineering, Hankou University, Wuhan, Hubei 430212; Yang, Jun

2016-01-15

Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the V{sub Cd{sup −}} and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atommore » hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl{sub 2} annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.« less

Crystal structure across the β to α phase transition in thermoelectric Cu 2–xSe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eikeland, Espen; Blichfeld, Anders B.; Borup, Kasper A.

Here, the crystal structure uniquely imparts the specific properties of a material, and thus provides the starting point for any quantitative understanding of thermoelectric properties. Cu 2–xSe is an intensely studied high performing, non-toxic and cheap thermoelectric material, and here for the first time, the average structure of β-Cu 2–xSe is reported based on analysis of multi-temperature single-crystal X-ray diffraction data. It consists of Se–Cu layers with additional copper between every alternate layer. The structural changes during the peculiar zT enhancing phase transition mainly consist of changes in the inter-layer distance coupled with subtle Cu migration. Just prior to themore » transition the structure exhibits strong negative thermal expansion due to the reordering of Cu atoms, when approached from low temperatures. The phase transition is fully reversible and group–subgroup symmetry relations are derived that relate the low-temperature β-phase to the high-temperature α-phase. Weak superstructure reflections are observed and a possible Cu ordering is proposed. The structural rearrangement may have a significant impact on the band structure and the Cu rearrangement may also be linked to an entropy increase. Both factors potentially contribute to the extraordinary zT enhancement across the phase transition.« less

Crystal structure across the β to α phase transition in thermoelectric Cu 2–xSe

DOE PAGES

Eikeland, Espen; Blichfeld, Anders B.; Borup, Kasper A.; ...

2017-06-13

Here, the crystal structure uniquely imparts the specific properties of a material, and thus provides the starting point for any quantitative understanding of thermoelectric properties. Cu 2–xSe is an intensely studied high performing, non-toxic and cheap thermoelectric material, and here for the first time, the average structure of β-Cu 2–xSe is reported based on analysis of multi-temperature single-crystal X-ray diffraction data. It consists of Se–Cu layers with additional copper between every alternate layer. The structural changes during the peculiar zT enhancing phase transition mainly consist of changes in the inter-layer distance coupled with subtle Cu migration. Just prior to themore » transition the structure exhibits strong negative thermal expansion due to the reordering of Cu atoms, when approached from low temperatures. The phase transition is fully reversible and group–subgroup symmetry relations are derived that relate the low-temperature β-phase to the high-temperature α-phase. Weak superstructure reflections are observed and a possible Cu ordering is proposed. The structural rearrangement may have a significant impact on the band structure and the Cu rearrangement may also be linked to an entropy increase. Both factors potentially contribute to the extraordinary zT enhancement across the phase transition.« less

Temperature dependence of positron annihilation parameters in Tl-Ba-Ca-Cu-O superconductors

NASA Astrophysics Data System (ADS)

Sundar, C. S.; Bharathi, A.; Ching, W. Y.; Jean, Y. C.; Hor, P. H.; Meng, R. L.; Huang, Z. J.; Chu, C. W.

1990-08-01

The results of positron lifetime and Doppler broadened line-shape parameter measurements as a function of temperature, across Tc, in the Tl-Ba-Ca-Cu-O superconductors are presented. The bulk lifetime in the normal state is found to decrease with the increase in the number of CuO2 layers. Different temperature dependencies of the annihilation parameters are observed in the various Tl systems containing different numbers of CuO2 layers. In the Tl2Ba2Ca2Cu3O10 system, an increase in lifetime is observed below Tc, whereas in Tl2Ba2CaCu2O8, a decrease in lifetime is seen below Tc. In the Tl2Ba2CuO6 system, the lifetime is observed to be temperature independent. The different temperature variations of positron annihilation parameters are discussed in the light of the positron density distribution, obtained with use of the results of the self-consistent orthogonalized linear combination of atomic orbitals band-structure calculations. It is argued that the different temperature dependencies of the annihilation parameters is related to the positron density distribution within the unit cell and arise due to local charge transfer in the vicinity of the CuO2 layer in the superconducting state.

CuO-Functionalized Silicon Photoanodes for Photoelectrochemical Water Splitting Devices.

PubMed

Shi, Yuanyuan; Gimbert-Suriñach, Carolina; Han, Tingting; Berardi, Serena; Lanza, Mario; Llobet, Antoni

2016-01-13

One main difficulty for the technological development of photoelectrochemical (PEC) water splitting (WS) devices is the fabrication of active, stable and cost-effective photoelectrodes that ensure high performance. Here, we report the development of a CuO/Silicon based photoanode, which shows an onset potential for the water oxidation of 0.53 V vs SCE at pH 9, that is, an overpotential of 75 mV, and high stability above 10 h. These values account for a photovoltage of 420 mV due to the absorbed photons by silicon, as proven by comparing with analogous CuO/FTO electrodes that are not photoactive. The photoanodes have been fabricated by sputtering a thin film of Cu(0) on commercially available n-type Si wafers, followed by a photoelectrochemical treatment in basic pH conditions. The resulting CuO/Cu layer acts as (1) protective layer to avoid the corrosion of nSi, (2) p-type hole conducting layer for efficient charge separation and transportation, and (3) electrocatalyst to reduce the overpotential of the water oxidation reaction. The low cost, low toxicity, and good performance of CuO-based coatings can be an attractive solution to functionalize unstable materials for solar energy conversion.

Method Producing an SNS Superconducting Junction with Weak Link Barrier

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor)

1999-01-01

A method of producing a high temperature superconductor Josephson element and an improved SNS weak link barrier element is provided. A YBaCuO superconducting electrode film is deposited on a substrate at a temperature of approximately 800 C. A weak link barrier layer of a nonsuperconducting film of N-YBaCuO is deposited over the electrode at a temperature range of 520 C. to 540 C. at a lower deposition rate. Subsequently a superconducting counter-electrode film layer of YBaCuO is deposited over the weak link barrier layer at approximately 800 C. The weak link barrier layer has a thickness of approximately 50 A and the SNS element can be constructed to provide an edge geometry junction.

Perspective: Maintaining surface-phase purity is key to efficient open air fabricated cuprous oxide solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; Ievskaya, Yulia; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk

2015-02-01

Electrochemically deposited Cu{sub 2}O solar cells are receiving growing attention owing to a recent doubling in efficiency. This was enabled by the controlled chemical environment used in depositing doped ZnO layers by atomic layer deposition, which is not well suited to large-scale industrial production. While open air fabrication with atmospheric pressure spatial atomic layer deposition overcomes this limitation, we find that this approach is limited by an inability to remove the detrimental CuO layer that forms on the Cu{sub 2}O surface. Herein, we propose strategies for achieving efficiencies in atmospherically processed cells that are equivalent to the high values achievedmore » in vacuum processed cells.« less

Superhydrophilicity and antibacterial property of a Cu-dotted oxide coating surface

PubMed Central

2010-01-01

Background Aluminum-made settings are widely used in healthcare, schools, public facilities and transit systems. Frequently-touched surfaces of those settings are likely to harbour bacteria and be a potential source of infection. One method to utilize the effectiveness of copper (Cu) in eliminating pathogens for these surfaces would be to coat the aluminum (Al) items with a Cu coating. However, such a combination of Cu and Al metals is susceptible to galvanic corrosion because of their different electrochemical potentials. Methods In this work, a new approach was proposed in which electrolytic plasma oxidation (EPO) of Al was used to form an oxide surface layer followed by electroplating of Cu metal on the top of the oxide layer. The oxide was designed to function as a corrosion protective and biocompatible layer, and the Cu in the form of dots was utilized as an antibacterial material. The antibacterial property enhanced by superhydrophilicity of the Cu-dotted oxide coating was evaluated. Results A superhydrophilic surface was successfully prepared using electrolytic plasma oxidation of aluminum (Al) followed by electroplating of copper (Cu) in a Cu-dotted form. Both Cu plate and Cu-dotted oxide surfaces had excellent antimicrobial activities against E. coli ATCC 25922, methicillin-resistant Staphylococcus aureus (MRSA) ATCC 43300 and vancomycin-resistant Enterococcus faecium (VRE) ATCC 51299. However, its Cu-dotted surface morphology allowed the Cu-dotted oxide surface to be more antibacterial than the smooth Cu plate surface. The enhanced antibacterial property was attributed to the superhydrophilic behaviour of the Cu-dotted oxide surface that allowed the bacteria to have a more effective killing contact with Cu due to spreading of the bacterial suspension media. Conclusion The superhydrophilic Cu-dotted oxide coating surface provided an effective method of controlling bacterial growth and survival on contact surfaces and thus reduces the risk of infection and spread of bacteria-related diseases particularly in moist or wet environments. PMID:20843373

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

NASA Astrophysics Data System (ADS)

Ani, M. H.; Helmi, F.; Herman, S. H.; Noh, S.

2018-01-01

Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.

[XPS analysis of beads formed by fuse breaking of electric copper wire].

PubMed

Wu, Ying; Meng, Qing-Shan; Wang, Xin-Ming; Gao, Wei; Di, Man

2010-05-01

The in-depth composition of beads formed by fuse breaking of the electric copper wire in different circumstances was studied by XPS with Ar+ ion sputtering. In addition, the measured Auger spectra and the calculated Auger parameters were compared for differentiation of the substances of Cu and Cu2O. Corresponding to the sputtering depth, the molten product on a bead induced directly by fuse breaking of the copper wire without cover may be distinguished as three portions: surface layer with a drastic decrease in carbon content; intermediate layer with a gentle change in oxygen content and gradually diminished carbon peak, and consisting of Cu2O; transition layer without Cu2O and with a rapid decrease in oxygen content. While the molten product on a bead formed by fuse breaking of the copper wire after its insulating cover had been burned out may be distinguished as two portions: surface layer with carbon content decreasing quickly; subsurface layer without Cu2O and with carbon and oxygen content decreasing gradually. Thus, it can be seen that there was an obvious interface between the layered surface product and the substrate for the first type of bead, while as to the second type of bead there was no interface. As a result, the presence of Cu2O and the quantitative results can be used to identify the molten product on a bead induced directly by fuse breaking of the copper wire without cover and the molten product on a bead formed by fuse breaking of the cupper wire after its insulating cover had been burned out, as a complementary technique for the judgments of fire cause.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

PubMed

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

PubMed Central

Lu, Kuankuan; Li, Yuzhi; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-01-01

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al2O3) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al2O3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al2O3 PVL exhibited remarkable mobility of 33.5–220.1 cm2/Vs when channel length varies from 60 to 560 μm. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. PMID:29584710

Cu-rGO subsurface layer creation on copper substrate and its resistance to oxidation

NASA Astrophysics Data System (ADS)

Pietrzak, Katarzyna; Strojny-Nędza, Agata; Olesińska, Wiesława; Bańkowska, Anna; Gładki, Andrzej

2017-11-01

On the basis of a specially designed experiment, this paper presents a model, which is an attempt to explain the mechanism of formatting and creating oxidation resistance of Cu-rGO subsurface layers. Practically zero chemical affinity of copper to carbon is a fundamental difficulty in creating composite structures of Cu-C, properties which are theoretically possible to estimate. In order to bind the thermally reduced graphene oxide with copper surface, the effect of structural rebuilding of the copper oxide, in the process of annealing in a nitrogen atmosphere, have been used. On intentionally oxidized and anoxic copper substrates the dispersed graphene oxide (GO) and thermally reduced graphene oxide (rGO) were loaded. Annealing processes after the binding effects of both graphene oxide forms to Cu substrates were tested. The methods for high-resolution electron microscopy were found subsurface rGO-Cu layer having a substantially greater resistance to oxidation than pure copper. The mechanism for the effective resistance to oxidation of the Cu-rGO has been presented in a hypothetical form.

In situ codoping of a CuO absorber layer with aluminum and titanium: the impact of codoping and interface engineering on the performance of a CuO-based heterojunction solar cell

NASA Astrophysics Data System (ADS)

Masudy-Panah, Saeid; Radhakrishnan, K.; Ru, Tan Hui; Yi, Ren; Wong, Ten It; Dalapati, Goutam Kumar

2016-09-01

Aluminum-doped cupric oxide (CuO:Al) was prepared via an out-diffusion process of Al from an Al-coated substrate into the deposited CuO thin film upon thermal treatment. The effect of the annealing temperature on the structural and optical properties of CuO:Al was investigated in detail. The influence of Al incorporation on the photovoltaic properties was then investigated by preparing a p-CuO:Al/n-Si heterojunction solar cell. A significant improvement in the performance of the solar cell was achieved by controlling the out-diffusion of Al. A novel in situ method to co-dope CuO with Al and titanium (Ti) has been proposed to demonstrate CuO-based solar cells with the front surface field (FSF) design. The FSF design was created by depositing a CuO:Al layer followed by a Ti-doped CuO (CuO:Ti) layer. This is the first successful experimental demonstration of the codoping of a CuO thin film and CuO thin film solar cells with the FSF design. The open circuit voltage (V oc), short circuit current density (J sc) and fill factor (FF) of the fabricated solar cells were significantly higher for the FSF device compared to devices without FSF. The FF of this device improved by 68% through the FSF design and a record efficiency ɳ of 2% was achieved. The improvement of the solar cell properties is mainly attributed to the reduction of surface recombination, which influences the charge carrier collection.

Effect of Sn-Ag-Cu on the Improvement of Electromigration Behavior in Sn-58Bi Solder Joint

NASA Astrophysics Data System (ADS)

Wang, Fengjiang; Zhou, Lili; Zhang, Zhijie; Wang, Jiheng; Wang, Xiaojing; Wu, Mingfang

2017-10-01

Reliability issues caused by the formation of a Bi-rich layer at the anode interface usually occurs in the Sn-58Bi eutectic solder joint during electromigration (EM). To improve the EM performance of a Sn-58Bi solder joint, Sn-3.0Ag-0.5Cu solder was introduced into it to produce SnBi-SnAgCu structural or compositional composite joints, and their EM behaviors were investigated with the current density of 1.0 × 104 A/cm2 for different stressing times. The structure of the compositional composite solder joint was obtained by the occurrence of partial or full mixing between Sn-Bi and Sn-Ag-Cu solder with a suitable soldering temperature. In the structural composite joint, melted Sn-Bi was partially mixed with Sn-Ag-Cu solder to produce a Cu/Sn-Bi/Sn-Ag-Cu/Sn-Bi/Cu structure. In the compositional composite joint, full melting and mixing between these two solders occurred to produce a Cu/Sn-Ag-Cu-Bi/Cu structure, in which the solder matrix was a homogeneous structure including Sn, Bi phases, Cu6Sn5 and Ag3Sn IMCs. After current stressing, the EM performance of Sn-Bi solder was obviously improved with the structural or the compositional composite joint. In Sn-58Bi joints, a thick Bi-rich layer was easily produced at the anode interface, and obviously increased with stressing time. However, after current stressing on the structural composite joints, the existence of s Sn-3.0Ag-0.5Cu interlayer between the two Sn-58Bi solders effectively acted as a diffusion barrier and significantly slowed the formation of the Bi-rich layer at the anode side and the IMC thicknesses at the interfaces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pathak, S.; Li, N.; Maeder, X.

We investigated the mechanical response of physical vapor deposited Cu–TiN nanolayered composites of varying layer thicknesses from 5 nm to 200 nm. Both the Cu and TiN layers were found to consist of single phase nanometer sized grains. The grain sizes in the Cu and TiN layers, measured using transmission electron microscopy and X-ray diffraction, were found to be comparable to or smaller than their respective layer thicknesses. Indentation hardness testing revealed that the hardness of such nanolayered composites exhibits a weak dependence on the layer thickness but is more correlated to their grain size.

Twin-mediated epitaxial growth of highly lattice-mismatched Cu/Ag core-shell nanowires.

PubMed

Weng, Wei-Lun; Hsu, Chin-Yu; Lee, Jheng-Syun; Fan, Hsin-Hsin; Liao, Chien-Neng

2018-05-31

Lattice-mismatch is an important factor for the heteroepitaxial growth of core-shell nanostructures. A large lattice-mismatch usually leads to a non-coherent interface or a polycrystalline shell layer. In this study, a conformal Ag layer is coated on Cu nanowires with dense nanoscale twin boundaries through a galvanic replacement reaction. Despite a large lattice mismatch between Ag and Cu (∼12.6%), the Ag shell replicates the twinning structure in Cu nanowires and grows epitaxially on the nanotwinned Cu nanowire. A twin-mediated growth mechanism is proposed to explain the epitaxy of high lattice-mismatch bimetallic systems in which the misfit dislocations are accommodated by coherent twin boundaries.

Removal of Cu(II) ions from contaminated waters using a conducting microfiltration membrane.

PubMed

Wang, Xueye; Wang, Zhiwei; Chen, Haiqin; Wu, Zhichao

2017-10-05

Efficient removal of toxic metals using low-pressure membrane processes from contaminated waters is an important but challenging task. In the present work, a conducting microfiltration membrane prepared by embedding a stainless steel mesh in the active layer of a polyvinylidene fluoride membrane is developed to remove Cu(II) ions from contaminated waters. Results showed that the conducting membrane had favorable electrochemical properties and stability as cathode. Batch tests showed that Cu(II) removal efficiency increased with the increase of voltages and leveled off with the further enhancement of electric field. The optimal voltages were determined to be 1.0V and 2.0V for the influent Cu(II) concentrations of 5mg/L and 30mg/L, respectively. X-ray photoelectron spectroscopy and X-ray diffraction results demonstrated the presence of Cu(0) and Cu(OH) 2 on the membrane surface. The removal mechanisms involved the intrinsic adsorption of membrane, electrosorption of membrane, adsorption of deposited layer, chemical precipitation of Cu(OH) 2 and deposition of Cu(0) which were aided by electrophoresis and electrochemical oxidation-reduction. Long-term tests showed that the major contributors for Cu(II) removal were the deposition of Cu(0) by electrochemical reduction-oxidation (47.3%±8.5%) and chemical precipitation (41.1%±0.2%), followed by electrosorption, adsorption by the fouling layer and membrane intrinsic sorption. Copyright © 2017 Elsevier B.V. All rights reserved.

Indirect Coupling of Magnetic Layers via Domain Wall Fringing fields

NASA Astrophysics Data System (ADS)

Parkin, Stuart

2001-03-01

Ferromagnetic films separated by thin metallic spacer layers are usually coupled through an indirect exchange interaction which oscillates in sign between ferro and antiferromagnetic coupling as a function of the spacer layer thickness^1. For both such metallic systems, and for multilayered systems in which the ferromagnetic films are separated by thin insulating layers, correlated roughness of the magnetic layers gives rise to a weak ferromagnetic coupling via dipole fields. Another type of dipolar coupling mechanism, which has largely been ignored, is that arising from domain wall fringing fields. These fields can be locally very large^2 and can result in the demagnetization of ferromagnetic films which are nominally highly coercive ("hard") in sandwiches comprised of "hard" and "soft" ferromagnetic layers. When the moment of the soft layer is reversed back and forth in small magnetic fields, much too small to affect the moment of the hard layer, substantial local fringing fields from domain walls created in the soft film gradually result in the demagnetization of the hard film. In some cases the moment of the hard layer decays in an oscillatory manner as it is successively partially demagnetized and remagnetized. This process has been observed on both macroscopic and microscopic length scales using SQUID magnetometry and high resolution photoemission electron microscopy, respectively^3. Magnetic interactions from domain wall fringing fields may be very important for magnetic devices, especially, magnetoresistance sensors and memory elements. [1] S.S.P. Parkin, N. More and K.P. Roche, Phys. Rev. Lett. 64, 2304 (1990); S.S.P. Parkin, Phys. Rev. Lett., 67, 3598 (1991). [2] L. Thomas, M. Samant and S.S.P. Parkin, Phys. Rev. Lett. 84, 1816 (2000). [3] L. Thomas, J Lüning, A. Scholl, F. Nolting, S. Anders, J. Stöhr and S.S.P. Parkin, Phys. Rev. Lett. 84, 3462 (2000).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Kuaibing, E-mail: wangkb@njau.edu.cn; State Key Laboratory of Coordination Chemistry, Coordination Chemistry Institute, Nanjing University, Nanjing 210093; Lv, Bo

Hollow CuO/Co{sub 3}O{sub 4} hybrids, which inherited from its coordination polymer precursor consisting of sheets layer and nanoparticles layer composites, were synthesized and characterized by SEM, EDX, XRD and XPS. To assess its electrochemical capacitive performances, cyclic voltammetry, galvanostatic charging-discharging measurements and A.C. impedance tests were performed successively. The CuO/Co{sub 3}O{sub 4} hybrids had higher capacitance and lower charge transfer resistance than bare Co{sub 3}O{sub 4} nanostructures, revealing that it provided a protection layer and produced a synergistic effect due to the existence of CuO layer. The distinct synergistic effect could be further confirmed by endurance cycling tests. The capacitancemore » of the CuO/Co{sub 3}O{sub 4} hybrids was 111% retained after 500 cycles at a charging rate of 1.0 A g{sup −1} and remained an intense growth trend after 2000 cycles at scan rate of 200 mV s{sup −1}. - Graphical abstract: Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized and display a peculiar synergetic effect on the resulting performances, which can further be evaluated and confirmed by series of electrochemical measurements. - Highlights: • Hollow CuO/Co{sub 3}O{sub 4} hybrids are synthesized from bimetallic-Schiff base polymer precursors. • The capacitance of the CuO/Co{sub 3}O{sub 4} hybrids keeps a growth tendency after 2000 cycles. • A synergetic effect is found for the hybrids in electrochemical energy storage process.« less

Dynamic XPS measurements of ultrathin polyelectrolyte films containing antibacterial Ag–Cu nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Taner-Camcı, Merve; Suzer, Sefik, E-mail: suzer@fen.bilkent.edu.tr

Ultrathin films consisting of polyelectrolyte layers prepared by layer-by-layer deposition technique and containing also Ag and Cu nanoparticles exhibit superior antibacterial activity toward Escherichia coli. These films have been investigated with XPS measurements under square wave excitation at two different frequencies, in order to further our understanding about the chemical/physical nature of the nanoparticles. Dubbed as dynamical XPS, such measurements bring out similarities and differences among the surface structures by correlating the binding energy shifts of the corresponding XPS peaks. Accordingly, it is observed that the Cu2p, Ag3d of the metal nanoparticles, and S2p of cysteine, the stabilizer and themore » capping agent, exhibit similar shifts. On the other hand, the C1s, N1s, and S2p peaks of the polyelectrolyte layers shift differently. This finding leads us the claim that the Ag and Cu atoms are in a nanoalloy structure, capped with cystein, as opposed to phase separated entities.« less

Super-hydrophilic copper sulfide films as light absorbers for efficient solar steam generation under one sun illumination

NASA Astrophysics Data System (ADS)

Guo, Zhenzhen; Ming, Xin; Wang, Gang; Hou, Baofei; Liu, Xinghang; Mei, Tao; Li, Jinhua; Wang, Jianying; Wang, Xianbao

2018-02-01

Solar steam technology is one of the simplest, most direct and effective ways to harness solar energy through water evaporation. Here, we report the development using super-hydrophilic copper sulfide (CuS) films with double-layer structures as light absorbers for solar steam generation. In the double-layer structure system, a porous mixed cellulose ester (MCE) membrane is used as a supporting layer, which enables water to get into the CuS light absorbers through a capillary action to provide continuous water during solar steam generation. The super-hydrophilic property of the double-layer system (CuS/MCE) leads to a thinner water film close to the air-water interface where the surface temperature is sufficiently high, leading to more efficient evaporation (˜80 ± 2.5%) under one sun illumination. Furthermore, the evaporation efficiencies still keep a steady value after 15 cycles of testing. The super-hydrophilic CuS film is promising for practical application in water purification and evaporation as a light absorption material.

Multilayer Disk Reduced Interlayer Crosstalk with Wide Disk-Fabrication Margin

NASA Astrophysics Data System (ADS)

Hirotsune, Akemi; Miyauchi, Yasushi; Endo, Nobumasa; Onuma, Tsuyoshi; Anzai, Yumiko; Kurokawa, Takahiro; Ushiyama, Junko; Shintani, Toshimichi; Sugiyama, Toshinori; Miyamoto, Harukazu

2008-07-01

To reduce interlayer crosstalk caused by the ghost spot which appears in a multilayer optical disk with more than three information layers, a multilayer disk structure which reduces interlayer crosstalk with a wide disk-fabrication margin was proposed in which the backward reflectivity of the information layers is sufficiently low. It was confirmed that the interlayer crosstalk caused by the ghost spot was reduced to less than the crosstalk from the adjacent layer by controlling backward reflectivity. The wide disk-fabrication margin of the proposed disk structure was indicated by experimentally confirming that the tolerance of the maximum deviation of the spacer-layer thickness is four times larger than that in the previous multilayer disk.

Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility

NASA Astrophysics Data System (ADS)

Shijeesh, M. R.; Jayaraj, M. K.

2018-04-01

Cuprous (Cu2O) and cupric (CuO) oxide thin films have been deposited by radio frequency magnetron sputtering with two different oxygen partial pressures. The as-deposited copper oxide films were subjected to post-annealing at 300 °C for 30 min to improve the microstructural, morphological, and optical properties of thin films. Optical absorption studies revealed the existence of a large number of subgap states inside CuO films than Cu2O films. Cu2O and CuO thin film transistors (TFTs) were fabricated in an inverted staggered structure by using a post-annealed channel layer. The field effect mobility values of Cu2O and CuO TFTs were 5.20 × 10-4 cm2 V-1 s-1 and 2.33 × 10-4 cm2 V-1 s-1, respectively. The poor values of subthreshold swing, threshold voltage, and field effect mobility of the TFTs were due to the charge trap density at the copper oxide/dielectric interface as well as defect induced trap states originated from the oxygen vacancies inside the bulk copper oxide. In order to study the distribution of the trap states in the Cu2O and CuO active layer, the temperature dependent transfer characteristics of transistors in the temperature range between 310 K and 340 K were studied. The observed subgap states were found to be decreasing exponentially inside the bandgap, with CuO TFT showing higher subgap states than Cu2O TFT. The high-density hole trap states in the CuO channel are one of the plausible reasons for the lower mobility in CuO TFT than in Cu2O TFT. The origin of these subgap states was attributed to the impurities or oxygen vacancies present in the CuO channel layer.

Quantification of elemental area densities in multiple metal layers (Au/Ni/Cu) on a Cr-coated quartz glass substrate for certification of NMIJ CRM 5208-a.

PubMed

Ariga, Tomoko; Zhu, Yanbei; Ito, Mika; Takatsuka, Toshiko; Terauchi, Shinya; Kurokawa, Akira; Inagaki, Kazumi

2018-04-01

Area densities of Au/Ni/Cu layers on a Cr-coated quartz substrate were characterized to certify a multiple-metal-layer certified reference material (NMIJ CRM5208-a) that is intended for use in the analysis of the layer area density and the thickness by an X-ray fluorescence spectrometer. The area densities of Au/Ni/Cu layers were calculated from layer mass amounts and area. The layer mass amounts were determined by using wet chemical analyses, namely inductively coupled plasma mass spectrometry (ICP-MS), isotope-dilution (ID-) ICP-MS, and inductively coupled plasma optical emission spectrometry (ICP-OES) after dissolving the layers with diluted mixture of HCl and HNO 3 (1:1, v/v). Analytical results of the layer mass amounts obtained by the methods agreed well with each another within their uncertainty ranges. The area of the layer was determined by using a high-resolution optical scanner calibrated by Japan Calibration Service System (JCSS) standard scales. The property values of area density were 1.84 ± 0.05 μg/mm 2 for Au, 8.69 ± 0.17 μg/mm 2 for Ni, and 8.80 ± 0.14 μg/mm 2 for Cu (mean ± expanded uncertainty, coverage factor k = 2). In order to assess the reliability of these values, the density of each metal layer calculated from the property values of the area density and layer thickness measured by using a scanning electron microscope were compared with available literature values and good agreement between the observed values and values obtained in previous studies.

Stable aqueous based Cu nanoparticle ink for printing well-defined highly conductive features on a plastic substrate.

PubMed

Jeong, Sunho; Song, Hae Chun; Lee, Won Woo; Lee, Sun Sook; Choi, Youngmin; Son, Wonil; Kim, Eui Duk; Paik, Choon Hoon; Oh, Seok Heon; Ryu, Beyong-Hwan

2011-03-15

With the aim of inkjet printing highly conductive and well-defined Cu features on plastic substrates, aqueous based Cu ink is prepared for the first time using water-soluble Cu nanoparticles with a very thin surface oxide layer. Owing to the specific properties, high surface tension and low boiling point, of water, the aqueous based Cu ink endows a variety of advantages over conventional Cu inks based on organic solvents in printing narrow conductive patterns without irregular morphologies. It is demonstrated how the design of aqueous based ink affects the basic properties of printed conductive features such as surface morphology, microstructure, conductivity, and line width. The long-term stability of aqueous based Cu ink against oxidation is analyzed through an X-ray photoelectron spectroscopy (XPS) based investigation on the evolution of the surface oxide layer in the aqueous based ink.

Enhanced hydrothermal stability of Cu-ZSM-5 catalyst via surface modification in the selective catalytic reduction of NO with NH3

NASA Astrophysics Data System (ADS)

Zhang, Tao; Shi, Juan; Liu, Jian; Wang, Daxi; Zhao, Zhen; Cheng, Kai; Li, Jianmei

2016-07-01

The surface of Cu-ZSM-5 catalyst was modified by chemical liquid deposition (CLD) of tetraethoxysilane (TEOS) for enhancing its hydrothermal stability in the selective catalytic reduction of NO with NH3. After hydrothermal aging at 750 °C for 13 h, the catalytic performance of Cu-ZSM-5-Aged catalyst was significantly reduced for NO reduction in the entire temperature range, while that of Cu-ZSM-5-CLD-Aged catalyst was affected very little. The characterization results indicated that an inert silica layer was deposited on the surface of Cu-ZSM-5 and formed a protective layer, which prevents the detachment of Cu2+ from ZSM-5 ion-exchange positions and the dealumination of zeolite during the hydrothermal aging process. Based on the data it is hypothesized to be the primary reason for the high hydrothermal stability of Cu-ZSM-5-CLD catalyst.

Enhancement in electrical conductivity of pastes containing submicron Ag-coated Cu filler with palmitic acid surface modification

NASA Astrophysics Data System (ADS)

Choi, Eun Byeol; Lee, Jong-Hyun

2017-09-01

The fabrication and applied use of submicron Ag-coated Cu (Cu@Ag) particles as a filler material for epoxy-based conductive pastes having the advantages of a lower material cost and antioxidation behavior were studied. Submicron Cu@Ag particles were successfully prepared and surface-modified using palmitic acid. Diffuse reflectance infrared Fourier transform spectroscopy and thermogravimetric differential scanning calorimetry results indicated the formation of an organic layer by the chemical interaction between the Cu@Ag surface and palmitic acid and the survival of the organic layer after treatment at 160 °C for 3 h in air. The printed pastes containing both commercial micron Cu@Ag flakes and the fabricated submicron Cu@Ag particles showed a greatly reduced electrical resistivity (4.68 × 10-4 Ω cm) after surface modification compared to an initial value of 1.85 × 10-3 Ω cm when cured.

Theoretical Insights into a CO Dimerization Mechanism in CO2 Electroreduction.

PubMed

Montoya, Joseph H; Shi, Chuan; Chan, Karen; Nørskov, Jens K

2015-06-04

In this work, we present DFT simulations that demonstrate the ability of Cu to catalyze CO dimerization in CO2 and CO electroreduction. We describe a previously unreported CO dimer configuration that is uniquely stabilized by a charged water layer on both Cu(111) and Cu(100). Without this charged water layer at the metal surface, the formation of the CO dimer is prohibitively endergonic. Our calculations also demonstrate that dimerization should have a lower activation barrier on Cu(100) than Cu(111), which, along with a more exergonic adsorption energy and a corresponding higher coverage of *CO, is consistent with experimental observations that Cu(100) has a high activity for C-C coupling at low overpotentials. We also demonstrate that this effect is present with cations other than H(+), a finding that is consistent with the experimentally observed pH independence of C2 formation on Cu.

Demonstration of Hybrid Multilayer Insulation for Fixed Thickness Applications

NASA Astrophysics Data System (ADS)

Johnson, W. L.; Fesmire, J. E.; Heckle, K. W.

2015-12-01

Cryogenic multilayer insulation (MLI) systems provide both conductive and radiative thermal insulation performance. The use of radiation shields with low conductivity spacers in between are required. By varying the distance and types of the spacers between the radiation shields, the relative radiation and conduction heat transfers can be manipulated. However, in most systems, there is a fixed thickness or volume allocated to the insulation. To understand how various combinations of different multilayer insulation (MLI) systems work together and to further validate thermal models of hybrid MLI systems, test data are needed. The MLI systems include combinations of Load-Bearing MLI (LB-MLI) and traditional MLI (tMLI). To further simulate the space launch vehicle case wherein both ambient pressure and vacuum environments are addressed, different cold-side thermal insulation substrates were included for select tests. The basic hybrid construction consists of some number of layers of LB-MLI on the cold side of the insulation system followed by layers of tMLI on the warm side of the system. The advantages of LB-MLI on the cold side of the insulation blanket are that its low layer density (0.5 - 0.6 layer/mm) is better suited for lower temperature applications and is a structural component to support heat interception shields that may be placed within the blanket. The advantage of tMLI systems on the warm side is that radiation is more dominant than conduction at warmer temperatures, so that a higher layer density is desired (2 - 3 layer/mm) and less effort need be put into minimizing conduction heat transfer. Liquid nitrogen boiloff test data using a cylindrical calorimeter are presented along with analysis for spacecraft tank applications.

Anomalous Hall hysteresis in T m3F e5O12/Pt with strain-induced perpendicular magnetic anisotropy

NASA Astrophysics Data System (ADS)

Tang, Chi; Sellappan, Pathikumar; Liu, Yawen; Xu, Yadong; Garay, Javier E.; Shi, Jing

2016-10-01

We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator T m3F e5O12 (TIG) films grown with pulsed laser deposition on a substituted G d3G a5O12 substrate which maximizes the tensile strain at the interface. In bilayers consisting of Pt and TIG, we observe large squared Hall hysteresis loops over a wide range of thicknesses of Pt at room temperature. When a thin Cu layer is inserted between Pt and TIG, the Hall hysteresis magnitude decays but stays finite as the thickness of Cu increases up to 5 nm. However, if the Cu layer is placed atop Pt instead, the Hall hysteresis magnitude is consistently larger than when the Cu layer with the same thickness is inserted in between for all Cu thicknesses. These results suggest that both the proximity-induced ferromagnetism and spin current contribute to the anomalous Hall effect.

Carbon tolerance of Ni-Cu and Ni-Cu/YSZ sub-μm sized SOFC thin film model systems

NASA Astrophysics Data System (ADS)

Götsch, Thomas; Schachinger, Thomas; Stöger-Pollach, Michael; Kaindl, Reinhard; Penner, Simon

2017-04-01

Thin films of YSZ, unsupported Ni-Cu 1:1 alloy phases and YSZ-supported Ni-Cu 1:1 alloy solutions have been reproducibly prepared by magnetron sputter deposition on Si wafers and NaCl(001) single crystal facets at two selected substrate temperatures of 298 K and 873 K. Subsequently, the layer properties of the resulting sub-μm thick thin films as well as the tendency towards carbon deposition following treatment in pure methane at 1073 K has been tested comparatively. Well-crystallized structures of cubic YSZ, cubic NiCu and cubic NiCu/YSZ have been obtained following deposition at 873 K on both substrates. Carbon is deposited on all samples following the trend Ni-Cu (1:1) = Ni-Cu (1:1)/YSZ > pure YSZ, indicating that at least the 1:1 composition of layered Ni-Cu alloy phases is not able to suppress the carbon deposition completely, rendering it unfavorable for usage as anode component in sub-μm sized fuel cells. It is shown that surfaces with a high Cu/Ni ratio nevertheless prohibit any carbon deposition.

Gas Suppression via Copper Interlayers in Magnetron Sputtered Al-Cu2O Multilayers.

PubMed

Kinsey, Alex H; Slusarski, Kyle; Sosa, Steven; Weihs, Timothy P

2017-07-05

The use of thin-foil, self-propagating thermite reactions to bond components successfully depends on the ability to suppress gas generation and avoid pore formation during the exothermic production of brazes. To study the mechanisms of vapor production in diluted thermites, thin film multilayer Al-Cu-Cu 2 O-Cu foils are produced via magnetron sputtering, where the Cu layer thickness is systematically increased from 0 to 100 nm in 25 nm increments. The excess Cu layers act as diffusion barriers, limiting the transport of oxygen from the oxide to the Al fuel, as determined by slow heating differential scanning calorimetry experiments. Furthermore, by adding excess Cu to the system, the temperature of the self-propagating thermite reactions drops below the boiling point of Cu, eliminating the metal vapor production. It is determined that Cu vapor production can be eliminated by increasing the Cu interlayer thickness above 50 nm. However, the porous nature of the final products suggests that only metal vapor production is suppressed via dilution. Gas generation via oxygen release is still capable of producing a porous reaction product.

Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

NASA Astrophysics Data System (ADS)

Devulder, Wouter; Opsomer, Karl; Franquet, Alexis; Meersschaut, Johan; Belmonte, Attilio; Muller, Robert; De Schutter, Bob; Van Elshocht, Sven; Jurczak, Malgorzata; Goux, Ludovic; Detavernier, Christophe

2014-02-01

In this paper, we investigate the influence of the carbon content on the Cu-Te phase formation and on the resistive switching behavior in carbon alloyed Cu0.6Te0.4 based conductive bridge random access memory (CBRAM) cells. Carbon alloying of copper-tellurium inhibits the crystallization, while attractive switching behavior is preserved when using the material as Cu-supply layer in CBRAM cells. The phase formation is first investigated in a combinatorial way. With increasing carbon content, an enlargement of the temperature window in which the material stays amorphous was observed. Moreover, if crystalline phases are formed, subsequent phase transformations are inhibited. The electrical switching behavior of memory cells with different carbon contents is then investigated by implementing them in 580 μm diameter dot TiN/Cu0.6Te0.4-C/Al2O3/Si memory cells. Reliable switching behavior is observed for carbon contents up to 40 at. %, with a resistive window of more than 2 orders of magnitude, whereas for 50 at. % carbon, a higher current in the off state and only a small resistive window are present after repeated cycling. This degradation can be ascribed to the higher thermal and lower drift contribution to the reset operation due to a lower Cu affinity towards the supply layer, leading cycle-after-cycle to an increasing amount of Cu in the switching layer, which contributes to the current. The thermal diffusion of Cu into Al2O3 under annealing also gives an indication of the Cu affinity of the source layer. Time of flight secondary ion mass spectroscopy was used to investigate this migration depth in Al2O3 before and after annealing, showing a higher Cu, Te, and C migration for high carbon contents.

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

2016-01-14

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to stronglymore » favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.« less

Signal processing and analysis for copper layer thickness measurement within a large variation range in the CMP process.

PubMed

Li, Hongkai; Zhao, Qian; Lu, Xinchun; Luo, Jianbin

2017-11-01

In the copper (Cu) chemical mechanical planarization (CMP) process, accurate determination of a process reaching the end point is of great importance. Based on the eddy current technology, the in situ thickness measurement of the Cu layer is feasible. Previous research studies focus on the application of the eddy current method to the metal layer thickness measurement or endpoint detection. In this paper, an in situ measurement system, which is independently developed by using the eddy current method, is applied to the actual Cu CMP process. A series of experiments are done for further analyzing the dynamic response characteristic of the output signal within different thickness variation ranges. In this study, the voltage difference of the output signal is used to represent the thickness of the Cu layer, and we can extract the voltage difference variations from the output signal fast by using the proposed data processing algorithm. The results show that the voltage difference decreases as thickness decreases in the conventional measurement range and the sensitivity increases at the same time. However, it is also found that there exists a thickness threshold, and the correlation is negative, when the thickness is more than the threshold. Furthermore, it is possible that the in situ measurement system can be used within a larger Cu layer thickness variation range by creating two calibration tables.

Physical properties of spin-valve films grown on naturally oxidized metal nano-oxide surfaces

NASA Astrophysics Data System (ADS)

Mao, Ming; Cerjan, Charlie; Kools, Jacques

2002-05-01

The physical properties of spin-valve films NiFe 25 Å/CoFe 10 Å/Cu(tCu)/CoFe 30 Å/IrMn 70 Å/Ta 20 Å with graded Cu layer thickness (tCu=18-45 Å) grown on the surface of metal nano-oxide layers (NOLs) were studied. The NOLs were formed from ultrathin Al, Cr, Cu, Nb, Ta, CoFe, NiFe, and NiFeCr layers by natural oxidation. The growth of the spin-valve films on NOLs has led to an enhancement in giant magnetoresistance value by up to 48%. A corresponding reduction in minimum film resistance by over 10% confirms that this enhancement originates from an increase in the mean free path of spin-polarized electrons due to the resultant specular reflection at the nano-oxide surfaces. A wide spectrum of oscillatory interlayer exchange coupling dependence on tCu for these NOL-bearing films suggests that a specular nano-oxide surface does not necessarily result in a smoother multilayer structure. The observation of an enhanced exchange biasing among these spin-valve films appears in contradiction to the observed deterioration of their crystallographic quality. As an important application, TaOx, CrOx, and NbOx could be employed as an alternative to AlOx as the barrier layer for magnetic tunnel junctions.

Surface chemistry of copper metal and copper oxide atomic layer deposition from copper(ii) acetylacetonate: a combined first-principles and reactive molecular dynamics study.

PubMed

Hu, Xiao; Schuster, Jörg; Schulz, Stefan E; Gessner, Thomas

2015-10-28

Atomistic mechanisms for the atomic layer deposition using the Cu(acac)2 (acac = acetylacetonate) precursor are studied using first-principles calculations and reactive molecular dynamics simulations. The results show that Cu(acac)2 chemisorbs on the hollow site of the Cu(110) surface and decomposes easily into a Cu atom and the acac-ligands. A sequential dissociation and reduction of the Cu precursor [Cu(acac)2 → Cu(acac) → Cu] are observed. Further decomposition of the acac-ligand is unfavorable on the Cu surface. Thus additional adsorption of the precursors may be blocked by adsorbed ligands. Molecular hydrogen is found to be nonreactive towards Cu(acac)2 on Cu(110), whereas individual H atoms easily lead to bond breaking in the Cu precursor upon impact, and thus release the surface ligands into the gas-phase. On the other hand, water reacts with Cu(acac)2 on a Cu2O substrate through a ligand-exchange reaction, which produces gaseous H(acac) and surface OH species. Combustion reactions with the main by-products CO2 and H2O are observed during the reaction between Cu(acac)2 and ozone on the CuO surface. The reactivity of different co-reactants toward Cu(acac)2 follows the order H > O3 > H2O.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

Modulation of porphyrin photoluminescence by nanoscale spacers on silicon substrates

NASA Astrophysics Data System (ADS)

Fang, Y. C.; Zhang, Y.; Gao, H. Y.; Chen, L. G.; Gao, B.; He, W. Z.; Meng, Q. S.; Zhang, C.; Dong, Z. C.

2013-11-01

We investigate photoluminescence (PL) properties of quasi-monolayered tetraphenyl porphyrin (TPP) molecules on silicon substrates modulated by three different nanoscale spacers: native oxide layer (NOL), hydrogen (H)-passivated layer, and Ag nanoparticle (AgNP) thin film, respectively. In comparison with the PL intensity from the TPP molecules on the NOL-covered silicon, the fluorescence intensity from the molecules on the AgNP-covered surface was greatly enhanced while that for the H-passivated surface was found dramatically suppressed. Time-resolved fluorescence spectra indicated shortened lifetimes for TPP molecules in both cases, but the decay kinetics is believed to be different. The suppressed emission for the H-passivated sample was attributed to the weaker decoupling effect of the monolayer of hydrogen atoms as compared to the NOL, leading to increased nonradiative decay rate; whereas the enhanced fluorescence with shortened lifetime for the AgNP-covered sample is attributed not only to the resonant excitation by local surface plasmons, but also to the increased radiative decay rate originating from the emission enhancement in plasmonic "hot-spots".

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions.

PubMed

Wang, Weiyi; Narayan, Awadhesh; Tang, Lei; Dolui, Kapildeb; Liu, Yanwen; Yuan, Xiang; Jin, Yibo; Wu, Yizheng; Rungger, Ivan; Sanvito, Stefano; Xiu, Faxian

2015-08-12

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what is expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ∼9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kita, Takashi; Suwa, Masaya; Kaizu, Toshiyuki

2014-06-21

The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n{sup +}-GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the [001] transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarizationmore » sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the [110] waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the [−110] waveguide is easily achieved even if the stacking is relatively low, although the gain is small.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohri, Maryam, E-mail: mmohri@ut.ac.ir; Karlsruhe Institute of Technology, Institute of Nanotechnology, 76021 Karlsruhe; Nili-Ahmadabadi, Mahmoud

The crystallization of Ni-rich/NiTiCu bi-layer thin film deposited by magnetron sputtering from two separate alloy targets was investigated. To achieve the shape memory effect, the NiTi thin films deposited at room temperature with amorphous structure were annealed at 773 K for 15, 30, and 60 min for crystallization. Characterization of the films was carried out by differential scanning calorimetry to indicate the crystallization temperature, grazing incidence X-ray diffraction to identify the phase structures, atomic force microscopy to evaluate surface morphology, scanning transmission electron microscopy to study the cross section of the thin films. The results show that the structure ofmore » the annealed thin films strongly depends on the temperature and time of the annealing. Crystalline grains nucleated first at the surface and then grew inward to form columnar grains. Furthermore, the crystallization behavior was markedly affected by composition variations. - Highlights: • A developed bi-layer Ni45TiCu5/Ni50.8Ti was deposited on Si substrate and crystallized. • During crystallization, The Ni{sub 45}TiCu{sub 5} layer is thermally less stable than the Ni-rich layer. • The activation energy is 302 and 464 kJ/mol for Cu-rich and Ni-rich layer in bi-layer, respectively.« less

Dynamics of the phase formation process upon the low temperature selenization of Cu/In-multilayer stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oertel, M., E-mail: michael.oertel@uni-jena.de; Ronning, C.

2015-03-14

Phase reactions occurring during a low temperature selenization of thin In/Cu-multilayer stacks were investigated by ex-situ x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS). Therefore, dc-sputtered In/Cu-multilayers onto molybdenum coated soda lime glass were selenized in a high vacuum system at temperatures between 260 and 340 °C with different dwell times and selenium supply. The combination of the results of the phase analysis by XRD and the measurements of the in-depth elemental distribution by EDS allowed a conclusion on the occurring reactions within the layer depth. We found two CuInSe{sub 2} formation processes depending on the applied temperature. Already, atmore » a heater temperature of 260 °C, the CuInSe{sub 2} formation can occur by the reaction of Cu{sub 2−x}Se with In{sub 4}Se{sub 3} and Se. At 340 °C, CuInSe{sub 2} is formed by the reaction of Cu{sub 2−x}Se with InSe and Se. Because both reactions need additional selenium, the selenium supply during the selenization can shift the reaction equilibria either to the metal binaries side or to the CuInSe{sub 2} side. Interestingly, a lower selenium supply shifts the equilibrium to the CuInSe{sub 2} side, because the amount of selenium incorporated into the metallic layer is higher for a lower selenium supply. Most likely, a larger number of grain boundaries are the reason for the stronger selenium incorporation. The results of the phase formation studies were used to design a two stage selenization process to get a defined structure of an indium selenide- and a copper selenide-layer at low temperatures as the origin for a controlled interdiffusion to form the CuInSe{sub 2}-absorber-layer at higher temperatures. The approach delivers a CuInSe{sub 2} absorber which reach total area efficiencies of 11.8% (13.0% active area) in a CuInSe{sub 2}-thin-film solar cell. A finished formation of CuInSe{sub 2} at low temperature was not observed in our experiments but is probably possible for longer dwell times.« less

Detailed low-energy electron diffraction analysis of the (4×4) surface structure of C60 on Cu(111): Seven-atom-vacancy reconstruction

NASA Astrophysics Data System (ADS)

Xu, Geng; Shi, Xing-Qiang; Zhang, R. Q.; Pai, Woei Wu; Jeng, H. T.; Van Hove, M. A.

2012-08-01

A detailed and exhaustive structural analysis by low-energy electron diffraction (LEED) is reported for the C60-induced reconstruction of Cu(111), in the system Cu(111) + (4 × 4)-C60. A wide LEED energy range allows enhanced sensitivity to the crucial C60-metal interface that is buried below the 7-Å-thick molecular layer. The analysis clearly favors a seven-Cu-atom vacancy model (with Pendry R-factor Rp = 0.376) over a one-Cu-atom vacancy model (Rp = 0.608) and over nonreconstructed models (Rp = 0.671 for atop site and Rp = 0.536 for hcp site). The seven-Cu-atom vacancy forms a (4 × 4) lattice of bowl-like holes. In each hole, a C60 molecule can nestle by forming strong bonds (shorter than 2.30 Å) between 15 C atoms of the molecule and 12 Cu atoms of the outermost and second Cu layers.

Metal-insulator transition in AlxGa1-xAs/GaAs heterostructures with large spacer width

NASA Astrophysics Data System (ADS)

Gold, A.

1991-10-01

Analytical results are presented for the mobility of a two-dimensional electron gas in a heterostructure with a thick spacer layer α. Due to multiple-scattering effects a metal-insulator transition occurs at a critical electron density Nc=N1/2i/(4π1/2α) (Ni is the impurity density). The transport mean free path l(t) (calculated in Born approximation) at the metal-insulator transition is l(t)c=2α. A localization criterion in terms of the renormalized single-particle mean free path l(sr) is presented: kFcl(sr)c=(1/2)1/2 (kFc is the Fermi wave number at the critical density). I compare the theoretical results with recent experimental results found in AlxGa1-xAs/GaAs heterostructures with large spacer width: 1200<α<2800 Å. Remote impurity doping and homogeneous background doping are considered. The only fitting parameter used for the theoretical results is the background doping density NB=6×1013 cm-3. My theory is in fair agreement with the experimental results.

Electro deposition of cuprous oxide for thin film solar cell applications

NASA Astrophysics Data System (ADS)

Shahrestani, Seyed Mohammad

p and n type copper oxide semiconductor layers were fabricated by electrochemistry using new approaches for photovoltaic applications. Thin films were electroplated by cathodic polarization on a copper foil or indium tin oxide (ITO) substrates. The optimum deposition conditions (composition, pH and temperature of the electrolyte and applied potential) of the layers as thin films have been identified; in particular the conditions that allow getting the n-type layers have been well identified for the first time. The configuration of a photo - electrochemical cell was used to characterize the spectral response of the layers. It was shown that the p type layers exhibit a photocurrent in the cathode potential region and n layers exhibit photo current in the anode potential region. Measurements of electrical resistivity of electro chemically deposited layers of p and n type Cu2O, showed that the resistivity of p-type Cu2O varies from 3.2 x 105 to 2.0 x 108 Ocm. These values depend the electrodepositing conditions such as the pH of the solution, the deposition potential and temperature. The influence of several plating parameters of the p type layers of Cu2O, such as applied potential, pH and temperature of the bath on the chemical composition, degree of crystallinity, grain size and orientation parameters of the sample was systematically studied using X-ray diffraction and scanning electron microscopy. Depending of the electro-deposition potential, two different surface morphologies with various preferential crystal orientations were obtained for the temperatures of the electro-deposition of 30 °C and pH 9. For the same temperature, the layers of p type Cu2O of highly crystalline p type are obtained at pH 12, indicating that the crystallinity depends on the pH of the bath. Also, it has been shown that the morphology of Cu2O layers was changed by varying the potential and the duration of deposition, as well as the temperature of the solution. The conditions for the electro-deposition of Cu2O n-type were identified consistently for the first time. The electro-deposition electrolyte is based 0.01M acetate copper and 0.1 M sodium acetate: it has a pH between 6.3 and 4, a potential of from 0 to -0.25 V vs. Ag / AgCl and a temperature of 60oC. The optimum annealing temperature of the n-type Cu2O layers is between 120-150oC for the annealing time of 30 to 120 minutes. Resistivity of the n-type films varies between 5 x 103 and 5 x 104 at pH 4 to pH 6.4. We have shown for the first time that bubbling nitrogen gas in the electroplating cell improves significantly the spectral response of the electro-deposited n-type thin film. A two steps electro-deposition process was implemented to make the p-n homojunction cuprous oxide. Indium tin oxide (ITO) was used as a transparent conductive oxide substrate. A p-Cu2O was electrodeposited on ITO. After heat treatment a thin film layer of n-Cu 2O was electrodeposited on top of previous layer. The performance of a p-n homojunction photovoltaic solar cell of Cu2O was determined. The short-circuit current and the open circuit voltage were respectively determined to be as 0.35 volts and 235 muA/cm2. The fill factor (FF) and conversion efficiency of light into electricity were respectively measured to be 0.305 and 0.082%.

Uncovering a new quasi-2D CuO2 plane between the YBa2Cu3O7 and CeO2 buffer layer of coated conductors

NASA Astrophysics Data System (ADS)

Li, Zhi-Xin; Cao, Jin-Jin; Gou, Xiao-Fan; Wang, Tian-Ge; Xue, Feng

2018-01-01

We report a discovery of the quasi-two-dimensional (quasi-2D) CuO2 plane between the superconductor YBa2Cu3O7 (YBCO) and CeO2 buffer layer (mostly used in the fabrication) of coated conductors through the atomistic computer simulations with the molecular dynamics (MD) and first-principle calculations. For an YBCO coated conductor with multilayer structures, the buffer layers deposited onto a substrate are mainly considered to transfer a strong biaxial texture from the substrate to the YBCO layer. To deeply understand the tuning mechanism of the texture transfer, exploring the complete atomic-level picture of the structure between the YBa2Cu3O7/CeO2 interfaces is firstly required. However, the related observation data have not been available due to some big challenges of experimental techniques. With the MD simulations, having tested the accuracy of the potential functions for the YBa2Cu3O7/CeO2 interface, we constructed a total of 54 possible atom stacking models of the interface and identified its most appropriate and stable structure according to the criterion of the interface adhesion energy and the coherent characterization. To further verify the stability of the identified structure, we performed the first-principle calculations to obtain the adhesion energy and developed the general knowledge of the interface structure. Finally, a coherent interface formed with a new built quasi-2D CuO2 plane that is structurally similar to the CuO2 plane inside bulk YBCO was determined.

Pentavalent and tetravalent uranium selenides, Tl3Cu4USe6 and Tl2Ag2USe4: syntheses, characterization, and structural comparison to other layered actinide chalcogenide compounds.

PubMed

Bugaris, Daniel E; Choi, Eun Sang; Copping, Roy; Glans, Per-Anders; Minasian, Stefan G; Tyliszczak, Tolek; Kozimor, Stosh A; Shuh, David K; Ibers, James A

2011-07-18

The compounds Tl(3)Cu(4)USe(6) and Tl(2)Ag(2)USe(4) were synthesized by the reaction of the elements in excess TlCl at 1123 K. Both compounds crystallize in new structure types, in space groups P2(1)/c and C2/m, respectively, of the monoclinic system. Each compound contains layers of USe(6) octahedra and MSe(4) (M = Cu, Ag) tetrahedra, separated by Tl(+) cations. The packing of the octahedra and the tetrahedra within the layers is compared to the packing arrangements found in other layered actinide chalcogenides. Tl(3)Cu(4)USe(6) displays peaks in its magnetic susceptibility at 5 and 70 K. It exhibits modified Curie-Weiss paramagnetic behavior with an effective magnetic moment of 1.58(1) μ(B) in the temperature range 72-300 K, whereas Tl(2)Ag(2)USe(4) exhibits modified Curie-Weiss paramagnetic behavior with μ(eff) = 3.4(1) μ(B) in the temperature range 100-300 K. X-ray absorption near-edge structure (XANES) results from scanning transmission X-ray spectromicroscopy confirm that Tl(3)Cu(4)USe(6) has Se bonding characteristic of discrete Se(2-) units, Cu bonding generally representative of Cu(+), and U bonding consistent with a U(4+) or U(5+) species. On the basis of these measurements, as well as bonding arguments, the formal oxidation states for U may be assigned as +5 in Tl(3)Cu(4)USe(6) and +4 in Tl(2)Ag(2)USe(4).

Effect of software version and parameter settings on the marginal and internal adaptation of crowns fabricated with the CAD/CAM system.

PubMed

Shim, Ji Suk; Lee, Jin Sook; Lee, Jeong Yol; Choi, Yeon Jo; Shin, Sang Wan; Ryu, Jae Jun

2015-10-01

This study investigated the marginal and internal adaptation of individual dental crowns fabricated using a CAD/CAM system (Sirona's BlueCam), also evaluating the effect of the software version used, and the specific parameter settings in the adaptation of crowns. Forty digital impressions of a master model previously prepared were acquired using an intraoral scanner and divided into four groups based on the software version and on the spacer settings used. The versions 3.8 and 4.2 of the software were used, and the spacer parameter was set at either 40 μm or 80 μm. The marginal and internal fit of the crowns were measured using the replica technique, which uses a low viscosity silicone material that simulates the thickness of the cement layer. The data were analyzed using a Friedman two-way analysis of variance (ANOVA) and paired t-tests with significance level set at p<0.05. The two-way ANOVA analysis showed the software version (p<0.05) and the spacer parameter (p<0.05) significantly affected the crown adaptation. The crowns designed with the version 4.2 of the software showed a better fit than those designed with the version 3.8, particularly in the axial wall and in the inner margin. The spacer parameter was more accurately represented in the version 4.2 of the software than in the version 3.8. In addition, the use of the version 4.2 of the software combined with the spacer parameter set at 80 μm showed the least variation. On the other hand, the outer margin was not affected by the variables. Compared to the version 3.8 of the software, the version 4.2 can be recommended for the fabrication of well-fitting crown restorations, and for the appropriate regulation of the spacer parameter.

High precision position sensor based on CPA in a composite multi-layered system.

PubMed

Dey, Sanjeeb; Singh, Suneel; Rao, Desai Narayana

2018-04-16

We propose a scheme for high precision position sensing based on coherent perfect absorption (CPA) in a five-layered structure comprising three layers of metal-dielectric composites and two spacer (air) layers. Both the outermost interfaces of the five layered medium are irradiated by two identical coherent light waves at the same angle of incidence. We first investigate the occurrence of CPA in a symmetric layered structure as a function of different system parameters for oblique incidence. Thereafter, by shifting the middle layer, beginning from one end of the structure to the other, we observe the periodic occurrence of extremely narrow CPA resonances at several positions of the middle layer. Moreover this phenomenon is seen to recur even at many other wavelengths. We discuss how the position sensitivity of this phenomenon can be utilized for designing a CPA based high precision position sensing device.

Site-selective doping and superconductivity in (La1-yPry)(Ba2-xLax)Cu3O7+δ

NASA Astrophysics Data System (ADS)

Mitzi, D. B.; Feffer, P. T.; Newsam, J. M.; Webb, D. J.; Klavins, P.; Jacobson, A. J.; Kapitulnik, A.

1988-10-01

Samples in the quaternary system (La1-yPry)(Ba2-xLax)Cu3O7+δ have been prepared and characterized using x-ray and neutron diffraction, thermogravimetric analysis, and transport and magnetic measurements. Pr substitutes on the oxygen-depleted La layers for y>0.0, while La substitutes on the Ba sites for x>0.0. The effect of doping on each site is inferred to be primarily local, affecting immediately adjacent Cu-O layers. The similar suppression of superconductivity that accompanies doping on each of the two distinct sites apparently correlates with the degree of oxidation of the Cu-O sheets (and not the chains), indicating that the sheets support the high temperature superconductivity. Comparison of orthorhombic and tetragonal samples with similar Ba:La ratios (and y=0) demonstrates that the orthorhombic phase yields the largest Meissner signals and highest transition temperatures in the La(Ba2-xLax)Cu3O7+δ system. The effect on superconductivity of oxygen-vacancy configuration in the Cu-O chain layers is proposed to derive, indirectly, from their influence on the Cu-O sheets. In addition, optimally superconducting La(Ba2-xLax)Cu3O7+δ samples exhibit interesting normal-state magnetic properties, with a paramagnetic susceptibility that decreases steadily with temperature between 350 K and Tc.

Structure and dynamics of shear bands in amorphous–crystalline nanolaminates

DOE PAGES

Guo, Wei; Gan, Bin; Molina-Aldareguia, Jon M.; ...

2015-08-03

In this paper, the velocities of shear bands in amorphous CuZr/crystalline Cu nanolaminates were quantified as a function of strain rate and crystalline volume fraction. A rate-dependent transition in flow response was found in a 100 nm CuZr/10 nm Cu nanolaminates. When increasing the Cu layer thickness from 10 nm to 100 nm, the instantaneous velocity of the shear band in these nanolaminates decreases from 11.2 μm/s to <~500 nm/s. Finally, atom probe tomography and transmission election microcopy observation revealed that in post-deformed pillars both grain rotation in the crystalline portion and non-diffusive crystallization in the amorphous layer affect themore » viscosity of shear bands.« less

Computational prediction of the electronic structure and optical properties of graphene-like β-CuN3.

PubMed

Zhang, Xu; Zhao, Xudong; Jing, Yu; Wu, Dihua; Zhou, Zhen

2015-12-21

Recently, a new polymorph of the highly energetic phase β-CuN3 has been synthesized. By hybrid density functional computations, we investigated the structural, electronic and optical properties of β-CuN3 bulk and layers. Due to the quantum confinement effect, the band gap of the monolayer (2.39 eV) is larger than that of the bulk (2.23 eV). The layer number affects the configuration and the band gap. β-CuN3 shows both ionic and covalent characters, and could be stable in the infrared and visible spectrum and would decompose under ultraviolet light. The results imply that bulk β-CuN3 could be used as an energetic material.

On the origins of hardness of Cu–TiN nanolayered composites

DOE PAGES

Pathak, S.; Li, N.; Maeder, X.; ...

2015-07-18

We investigated the mechanical response of physical vapor deposited Cu–TiN nanolayered composites of varying layer thicknesses from 5 nm to 200 nm. Both the Cu and TiN layers were found to consist of single phase nanometer sized grains. The grain sizes in the Cu and TiN layers, measured using transmission electron microscopy and X-ray diffraction, were found to be comparable to or smaller than their respective layer thicknesses. Indentation hardness testing revealed that the hardness of such nanolayered composites exhibits a weak dependence on the layer thickness but is more correlated to their grain size.

Nodeless pairing in superconducting copper-oxide monolayer films on Bi 2Sr 2CaCu 2O 8+δ

DOE PAGES

Zhong, Yong; Wang, Yang; Han, Sha; ...

2016-07-12

We report that the pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO 2 layers. Here, by growing CuO 2 monolayer films on Bi 2Sr 2CaCu 2O 8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherencemore » and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO 2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. In conclusion, our results support an s-wave superconductivity in Bi 2Sr 2CaCu 2O 8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO 2 layers.« less

Nodeless pairing in superconducting copper-oxide monolayer films on Bi 2Sr 2CaCu 2O 8+δ

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhong, Yong; Wang, Yang; Han, Sha

We report that the pairing mechanism of high-temperature superconductivity in cuprates remains the biggest unresolved mystery in condensed matter physics. To solve the problem, one of the most effective approaches is to investigate directly the superconducting CuO 2 layers. Here, by growing CuO 2 monolayer films on Bi 2Sr 2CaCu 2O 8+δ substrates, we identify two distinct and spatially separated energy gaps centered at the Fermi energy, a smaller U-like gap and a larger V-like gap on the films, and study their interactions with alien atoms by low-temperature scanning tunneling microscopy. The newly discovered U-like gap exhibits strong phase coherencemore » and is immune to scattering by K, Cs and Ag atoms, suggesting its nature as a nodeless superconducting gap in the CuO 2 layers, whereas the V-like gap agrees with the well-known pseudogap state in the underdoped regime. In conclusion, our results support an s-wave superconductivity in Bi 2Sr 2CaCu 2O 8+δ, which, we propose, originates from the modulation-doping resultant two-dimensional hole liquid confined in the CuO 2 layers.« less

A comprehensive study of magnetic exchanges in the layered oxychalcogenides Sr 3 Fe 2 O 5 Cu 2 Q 2 ( Q = S, Se)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lü, Minfeng; Mentré, Olivier; Gordon, Elijah E.

2017-12-01

The layered oxysulfide Sr3Fe2O5Cu2S2 was prepared, and its crystal structure and magnetic properties were characterized by synchrotron X-ray diffraction (XRD), powder neutron diffraction (PND), Mössbauer spectroscopy measurements and by density functional theory (DFT) calculations. In addition, the spin exchange interactions leading to the ordered magnetic structure of Sr3Fe2O5Cu2S2 were compared with those of its selenium analogue Sr3Fe2O5Cu2Se2. The oxysulfide Sr3Fe2O5Cu2S2 adopts a G-type antiferromagnetic (AFM) structure at a temperature in the range 485–512 K, which is comparable with the three-dimensional (3D) AFM ordering temperature, TN ≈ 490 K, found for Sr3Fe2O5Cu2Se2. Consistent with this observation, the spin exchange interactions ofmore » the magnetic (Sr3Fe2O5)2+ layers are slightly greater (but comparable) for oxysulfide than for the oxyselenide. Attempts to reduce or oxidize Sr3Fe2O5Cu2S2 using topochemical routes yield metallic Fe.« less

Room-temperature synthesis of three-dimensional porous ZnO@CuNi hybrid magnetic layers with photoluminescent and photocatalytic properties.

PubMed

Guerrero, Miguel; Zhang, Jin; Altube, Ainhoa; García-Lecina, Eva; Roldan, Mònica; Baró, Maria Dolors; Pellicer, Eva; Sort, Jordi

2016-01-01

A facile synthetic approach to prepare porous ZnO@CuNi hybrid films is presented. Initially, magnetic CuNi porous layers (consisting of phase separated CuNi alloys) are successfully grown by electrodeposition at different current densities using H 2 bubbles as a dynamic template to generate the porosity. The porous CuNi alloys serve as parent scaffolds to be subsequently filled with a solution containing ZnO nanoparticles previously synthesized by sol-gel. The dispersed nanoparticles are deposited dropwise onto the CuNi frameworks and the solvent is left to evaporate while the nanoparticles impregnate the interior of the pores, rendering ZnO-coated CuNi 3D porous structures. No thermal annealing is required to obtain the porous films. The synthesized hybrid porous layers exhibit an interesting combination of tunable ferromagnetic and photoluminescent properties. In addition, the aqueous photocatalytic activity of the composite is studied under UV-visible light irradiation for the degradation of Rhodamine B. The proposed method represents a fast and inexpensive approach towards the implementation of devices based on metal-semiconductor porous systems, avoiding the use of post-synthesis heat treatment steps which could cause deleterious oxidation of the metallic counterpart, as well as collapse of the porous structure and loss of the ferromagnetic properties.

Effect of Strain Rate on Joint Strength and Failure Mode of Lead-Free Solder Joints

NASA Astrophysics Data System (ADS)

Lin, Jian; Lei, Yongping; Fu, Hanguang; Guo, Fu

2018-03-01

In surface mount technology, the Sn-3.0Ag-0.5Cu solder joint has a shorter impact lifetime than a traditional lead-tin solder joint. In order to improve the impact property of SnAgCu lead-free solder joints and identify the effect of silver content on tensile strength and impact property, impact experiments were conducted at various strain rates on three selected SnAgCu based solder joints. It was found that joint failure mainly occurred in the solder material with large plastic deformation under low strain rate, while joint failure occurred at the brittle intermetallic compound layer without any plastic deformation at a high strain rate. Joint strength increased with the silver content in SnAgCu alloys in static tensile tests, while the impact property of the solder joint decreased with increasing silver content. When the strain rate was low, plastic deformation occurred with failure and the tensile strength of the Sn-3.0Ag-0.5Cu solder joint was higher than that of Sn-0.3Ag-0.7Cu; when the strain rate was high, joint failure mainly occurred at the brittle interface layer and the Sn-0.3Ag-0.7Cu solder joint had a better impact resistance with a thinner intermetallic compound layer.

Room-temperature synthesis of three-dimensional porous ZnO@CuNi hybrid magnetic layers with photoluminescent and photocatalytic properties

NASA Astrophysics Data System (ADS)

Guerrero, Miguel; Zhang, Jin; Altube, Ainhoa; García-Lecina, Eva; Roldan, Mònica; Baró, Maria Dolors; Pellicer, Eva; Sort, Jordi

2016-01-01

A facile synthetic approach to prepare porous ZnO@CuNi hybrid films is presented. Initially, magnetic CuNi porous layers (consisting of phase separated CuNi alloys) are successfully grown by electrodeposition at different current densities using H2 bubbles as a dynamic template to generate the porosity. The porous CuNi alloys serve as parent scaffolds to be subsequently filled with a solution containing ZnO nanoparticles previously synthesized by sol-gel. The dispersed nanoparticles are deposited dropwise onto the CuNi frameworks and the solvent is left to evaporate while the nanoparticles impregnate the interior of the pores, rendering ZnO-coated CuNi 3D porous structures. No thermal annealing is required to obtain the porous films. The synthesized hybrid porous layers exhibit an interesting combination of tunable ferromagnetic and photoluminescent properties. In addition, the aqueous photocatalytic activity of the composite is studied under UV-visible light irradiation for the degradation of Rhodamine B. The proposed method represents a fast and inexpensive approach towards the implementation of devices based on metal-semiconductor porous systems, avoiding the use of post-synthesis heat treatment steps which could cause deleterious oxidation of the metallic counterpart, as well as collapse of the porous structure and loss of the ferromagnetic properties.

Buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

Artificial twin-layer configurations of Zn(O,S) films by radio frequency sputtering in all dry processed eco-friendly Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Liu, Wei; Fan, Yu; Li, Xiaodong; Lin, Shuping; Liu, Yang; Shi, Sihan; Wang, He; Zhou, Zhiqiang; Zhang, Yi; Sun, Yun

2018-03-01

Cu(In,Ga)Se2 thin film solar cells are of great interest for research and industrial applications with their high conversion efficiencies, long-term stability and significant lifetimes. Such a solar cell of a p-n junction consists of p-type Cu(In,Ga)Se2 films as a light absorber and n-type CdS as a buffer layer, which often emerges with intrinsic ZnO. Aimed at eco-friendly fabrication protocols, a large number of strategies have been investigated to fabricate a Cd-free n-type buffer layer such as Zn(O,S) in Cu(In,Ga)Se2 solar cells. Also, if the Zn(O,S) films are prepared by coevaporation or sputtering, it will offer high compatibility with the preferred mass production. Here, we propose and optimize a dry method for Zn(O,S) deposition in a radio frequency sputtering. In particular, the strategy for the twin-layer configurations of Zn(O,S) films not only greatly improve their electrical conductance and suppress charge carrier recombination, but also avoid degradation of the Zn(O,S)/Cu(In,Ga)Se2 interfaces. Indeed, the high quality of such twin Zn(O,S) layers have been reflected in the similar conversion efficiencies of the complete solar cells as well as the large short-circuit current density, which exceeds the CdS reference device. In addition, Zn(O,S) twin layers have reduced the production time and materials by replacing the CdS/i-ZnO layers, which removes two fabrication steps in the multilayered thin film solar cells. Furthermore, the device physics for such improvements have been fully unveiled with both experimental current-voltage and capacitance-voltage spectroscopies and device simulations via wxAMPS program. Finally, the proposed twin-layer Zn(O,S)/Cu(In,Ga)Se2 interfaces account for the broadening of the depletion region of photogenerated charge carriers, which greatly suppress the carrier recombination at the space charge region, and eventually lead to the more efficient collection of charge carriers at both electrodes.

Cu2+ ions as a paramagnetic probe to study the surface chemical modification process of layered double hydroxides and hydroxide salts with nitrate and carboxylate anions.

PubMed

Arizaga, Gregorio Guadalupe Carbajal; Mangrich, Antonio Salvio; Wypych, Fernando

2008-04-01

A layered zinc hydroxide nitrate (Zn5(OH)8(NO3)2.2H2O) and a layered double hydroxide (Zn/Al-NO3) were synthesized by coprecipitation and doped with different amounts of Cu2+ (0.2, 1, and 10 mol%), as paramagnetic probe. Although the literature reports that the nitrate ion is free (with D3h symmetry) between the layers of these two structures, the FTIR spectra of two zinc hydroxide nitrate samples show the C2v symmetry for the nitrate ion, whereas the g ||/A || value in the EPR spectra of Cu2+ is high. This fact suggests bonding of some nitrate ions to the layers of the zinc hydroxide nitrate. The zinc hydroxide nitrate was used as matrix in the intercalation reaction with benzoate, o-chlorobenzoate, and o-iodobenzoate ions. FTIR spectra confirm the ionic exchange reaction and the EPR spectroscopy reveals bonding of the organic ions to the inorganic layers of the zinc hydroxide nitrate, while the layered double hydroxides show only exchange reactions.

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.

PubMed

Chin, Fun-Tat; Lin, Yu-Hsien; You, Hsin-Chiang; Yang, Wen-Luh; Lin, Li-Min; Hsiao, Yu-Ping; Ko, Chum-Min; Chao, Tien-Sheng

2014-01-01

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

Bivalent ligands incorporating curcumin and diosgenin as multifunctional compounds against Alzheimer's disease.

PubMed

Chojnacki, Jeremy E; Liu, Kai; Saathoff, John M; Zhang, Shijun

2015-11-15

In an effort to combat the multifaceted nature of Alzheimer's disease (AD) progression, a series of multifunctional, bivalent compounds containing curcumin and diosgenin were designed, synthesized, and biologically characterized. Screening results in MC65 neuroblastoma cells established that compound 38 with a spacer length of 17 atoms exhibited the highest protective potency with an EC50 of 111.7 ± 9.0 nM. A reduction in protective activity was observed as spacer length was increased up to 28 atoms and there is a clear structural preference for attachment to the methylene carbon between the two carbonyl moieties of curcumin. Further study suggested that antioxidative ability and inhibitory effects on amyloid-β oligomer (AβO) formation may contribute to the neuroprotective outcomes. Additionally, compound 38 was found to bind directly to Aβ, similar to curcumin, but did not form complexes with the common biometals Cu, Fe, and Zn. Altogether, these results give strong evidence to support the bivalent design strategy in developing novel compounds with multifunctional ability for the treatment of AD. Copyright © 2015 Elsevier Ltd. All rights reserved.

Residual stress within nanoscale metallic multilayer systems during thermal cycling

DOE PAGES

Economy, David Ross; Cordill, Megan Jo; Payzant, E. Andrew; ...

2015-09-21

Projected applications for nanoscale metallic multilayers will include wide temperature ranges. Since film residual stress has been known to alter system reliability, stress development within new film structures with high interfacial densities should be characterized to identify potential long-term performance barriers. To understand factors contributing to thermal stress evolution within nanoscale metallic multilayers, stress in Cu/Nb systems adhered to Si substrates was calculated from curvature measurements collected during cycling between 25 °C and 400 °C. Additionally, stress within each type of component layers was calculated from shifts in the primary peak position from in-situ heated X-ray diffraction. The effects ofmore » both film architecture (layer thickness) and layer order in metallic multilayers were tracked and compared with monolithic Cu and Nb films. Analysis indicated that the thermoelastic slope of nanoscale metallic multilayer films depends on thermal expansion mismatch, elastic modulus of the components, and also interfacial density. The layer thickness (i.e. interfacial density) affected thermoelastic slope magnitude while layer order had minimal impact on stress responses after the initial thermal cycle. When comparing stress responses of monolithic Cu and Nb films to those of the Cu/Nb systems, the nanoscale metallic multilayers show a similar increase in stress above 200 °C to the Nb monolithic films, indicating that Nb components play a larger role in stress development than Cu. Local stress calculations from X-ray diffraction peak shifts collected during heating reveal that the component layers within a multilayer film respond similarly to their monolithic counterparts.« less

Colossal internal barrier layer capacitance effect in polycrystalline copper (II) oxide

NASA Astrophysics Data System (ADS)

Sarkar, Sudipta; Jana, Pradip Kumar; Chaudhuri, B. K.

2008-01-01

Dielectric spectroscopy analysis of the high permittivity (κ˜104) copper (II) oxide (CuO) ceramic shows that the grain contribution plays a major role for the giant-κ value at low temperature, whereas grain boundary (GB) contribution dominates around room temperature and above. Moreover, impedance spectroscopy analysis reveals electrically heterogeneous microstructure in CuO consisting of semiconducting grains and insulating GBs. Finally, the giant dielectric phenomenon exhibited by CuO is attributed to the internal barrier layer (due to GB) capacitance mechanism.

Changes in the adsorbate dipole layer with changing d-filling of the metal (II) (Co, Ni, Cu) phthalocyanines on Au(111).

PubMed

Xiao, Jie; Dowben, Peter A

2009-02-04

In combined photoemission and inverse photoemission spectroscopy studies, we observe changes in the metal phthalocyanine molecular orbital offsets with respect to the conducting gold substrate Fermi level, with the changing d-electron filling of the metal (II) (Co, Ni, Cu) phthalocyanines. The implication is that the interfacial dipole layer depends upon the choice of metal (Co, Ni, Cu) centers within the metal (II) phthalocyanines adsorbed on Au(111).

Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

NASA Astrophysics Data System (ADS)

Inglese, Alessandro; Laine, Hannu S.; Vähänissi, Ville; Savin, Hele

2018-01-01

The presence of copper (Cu) contamination is known to cause relevant light-induced degradation (Cu-LID) effects in p-type silicon. Due to its high diffusivity, Cu is generally regarded as a relatively benign impurity, which can be readily relocated during device fabrication from the wafer bulk, i.e. the region affected by Cu-LID, to the surface phosphorus-doped emitter. This contribution examines in detail the impact of gettering by industrially relevant phosphorus layers on the strength of Cu-LID effects. We find that phosphorus gettering does not always prevent the occurrence of Cu-LID. Specifically, air-cooling after an isothermal anneal at 800°C results in only weak impurity segregation to the phosphorus-doped layer, which turns out to be insufficient for effectively mitigating Cu-LID effects. Furthermore, we show that the gettering efficiency can be enhanced through the addition of a slow cooling ramp (-4°C/min) between 800°C and 600°C, resulting in the nearly complete disappearance of Cu-LID effects.

Electrodeposited Ni-Based Magnetic Mesoporous Films as Smart Surfaces for Atomic Layer Deposition: An "All-Chemical" Deposition Approach toward 3D Nanoengineered Composite Layers.

PubMed

Zhang, Jin; Quintana, Alberto; Menéndez, Enric; Coll, Mariona; Pellicer, Eva; Sort, Jordi

2018-05-02

Mesoporous Ni and Cu-Ni (Cu 20 Ni 80 and Cu 45 Ni 55 in at. %) films, showing a three-dimensional (3D) porous structure and tunable magnetic properties, are prepared by electrodeposition from aqueous surfactant solutions using micelles of P-123 triblock copolymer as structure-directing entities. Pores between 5 and 30 nm and dissimilar space arrangements (continuous interconnected networks, circular pores, corrugated mesophases) are obtained depending on the synthetic conditions. X-ray diffraction studies reveal that the Cu-Ni films have crystallized in the face-centered cubic structure, are textured, and exhibit certain degree of phase separation, particularly those with a higher Cu content. Atomic layer deposition (ALD) is used to conformally coat the mesopores of Cu 20 Ni 80 film with amorphous Al 2 O 3 , rendering multiphase "nano-in-meso" metal-ceramic composites without compromising the ferromagnetic response of the metallic scaffold. From a technological viewpoint, these 3D nanoengineered composite films could be appealing for applications like magnetically actuated micro/nanoelectromechanical systems (MEMS/NEMS), voltage-driven magneto-electric devices, capacitors, or as protective coatings with superior strength and tribological performance.

Electroless Cu Plating on Anodized Al Substrate for High Power LED.

PubMed

Rha, Sa-Kyun; Lee, Youn-Seoung

2015-03-01

Area-selective copper deposition on screen printed Ag pattern/anodized Al/Al substrate was attempted using a neutral electroless plating processes for printed circuit boards (PCBs), according to a range of variation of pH 6.5-pH 8 at 70 °C. The utilized basic electroless solution consisted of copper(II) sulfate pentahydrate, sodium phosphinate monohydrate, sodium citrate tribasic dihydrate, ammonium chloride, and nickel(II) sulfate hexahydrate. The pH of the copper plating solutions was adjusted from pH 6.5 to pH 8 using NH4OH. Using electroless plating in pH 6.5 and pH 7 baths, surface damage to the anodized Al layer hardly occurred; the structure of the plated Cu-rich films was a typical fcc-Cu, but a small Ni component was co-deposited. In electroless plating at pH 8, the surface of the anodized Al layer was damaged and the Cu film was composed of a lot of Ni and P which were co-deposited with Cu. Finally, in a pH 7 bath, we can make a selectively electroless plated Cu film on a PCB without any lithography and without surface damage to the anodized Al layer.

Deposition of ultra thin CuInS₂ absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C).

PubMed

Schneider, Nathanaelle; Bouttemy, Muriel; Genevée, Pascal; Lincot, Daniel; Donsanti, Frédérique

2015-02-06

Two new processes for the atomic layer deposition of copper indium sulfide (CuInS₂) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl₃) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS₂ stoechiometry was only achieved by depositing In₂S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)₂, In(acac)₃) allows the direct deposition of CuInS₂ at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.

Buffer layers on metal surfaces having biaxial texture as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

Strain relaxation in nm-thick Cu and Cu-alloy films bonded to a rigid substrate

NASA Astrophysics Data System (ADS)

Herrmann, Ashley Ann Elizabeth

In the wide scope of modern technology, nm-thick metallic films are increasingly used as lubrication layers, optical coatings, plating seeds, diffusion barriers, adhesion layers, metal contacts, reaction catalyzers, etc. A prominent example is the use of nm-thick Cu films as electroplating seed layers in the manufacturing of integrated circuits (ICs). These high density circuits are linked by on-chip copper interconnects, which are manufactured by filling Cu into narrow trenches by electroplating. The Cu fill by electroplating requires a thin Cu seed deposited onto high-aspect-ratio trenches. In modern ICs, these trenches are approaching 10 nm or less in width, and the seed layers less than 1 nm in thickness. Since nm-thick Cu seed layers are prone to agglomeration or delamination, achieving uniform, stable and highly-conductive ultra-thin seeds has become a major manufacturing challenge. A fundamental understanding of the strain behavior and thermal stability of nm-thick metal films adhered to a rigid substrate is thus critically needed. In this study, we focus on understanding the deformation modes of nm-thick Cu and Cu-alloy films bonded to a rigid Si substrate and under compressive stress. The strengthening of Cu films through alloying is also studied. In-situ transport measurements are used to monitor the deformation of such films as they are heated from room temperature to 400 °C. Ex-situ AFM is then used to help characterize the mode of strain relaxation. The relaxation modes are known to be sensitive to the wetting and adhesive properties of the film-substrate interface. We use four different liners (Ta, Ru, Mo and Co), interposed between the film and substrate to provide a wide range of interfacial properties to study their effect on the film's thermal stability. Our measurements indicate that when the film/liner interfacial energy is low, grain growth is the dominant relaxation mechanism. As the interface energy increases, grain growth is suppressed, and the strain is relaxed through hillock/island formation instead. The kinetics-limiting parameters for these relaxation modes are identified and used to simulate their kinetics, and a deformation map is then constructed to delineate the conditions under which each mode would prevail. Such a deformation map would prove useful when one seeks to optimize the thermal stability or other mechanical properties in any ultra-thin film system.

Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

DOEpatents

Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

1995-01-01

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

DOEpatents

Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

1995-08-15

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

Mechanical and microstructural characterization of W–Cu FGM fabricated by one-step sintering method through PM route

NASA Astrophysics Data System (ADS)

Gupta, Rajat; Kumar, Rohit; Chaubey, A. K.; Kanpara, Shailesh; Khirwadkar, S. S.

2018-03-01

Five layer W-Cu functionally graded material (FGM) for components in nuclear fusion application was fabricated by a one-step resistance sintering process, known as spark plasma sintering (SPS). In this study effect of sintering temperature (Ts) on physical, mechanical and surface property was investigated. Detailed microstructural study revealed that the graded structure of the composite layers with varying composition from 0 to 100 wt% W and Cu in opposite directions could be well densified after the SPS process. It also indicates that the fine microstructure within functionally graded layers can be maintained because of short sintering time. The sample sintered at 1050°C shows more than 90% theoretical density, hardness greater than 239±5 Hv and excellent surface scratch resistance. The result demonstrates that SPS is promising and more suitable process for fabrication of W-Cu FGM.

Electrical and magnetic properties of conductive Cu-based coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Thompson, J. R.; Goyal, A.; Rutter, N.; Zhai, H. Y.; Gapud, A. A.; Ijaduola, A. O.; Christen, D. K.

2003-11-01

The development of YBa2Cu3O7-δ (YBCO)-based coated conductors for electric power applications will require electrical and thermal stabilization of the high-temperature superconducting (HTS) coating. In addition, nonmagnetic tape substrates are an important factor in order to reduce the ferromagnetic hysteresis energy loss in ac applications. We report progress toward a conductive buffer layer architecture on biaxially textured nonmagnetic Cu tapes to electrically couple the HTS layer to the underlying metal substrate. A protective Ni overlayer, followed by a single buffer layer of La0.7Sr0.3MnO3, was employed to avoid Cu diffusion and to improve oxidation resistance of the substrate. Property characterizations of YBCO films on short prototype samples revealed self-field critical current density (Jc) values exceeding 2×106 A/cm2 at 77 K and good electrical connectivity. Magnetic hysteretic loss due to Ni overlayer was also investigated.

Thermally driven self-healing using copper nanofiber heater

NASA Astrophysics Data System (ADS)

Lee, Min Wook; Jo, Hong Seok; Yoon, Sam S.; Yarin, Alexander L.

2017-07-01

Nano-textured transparent heaters made of copper nanofibers (CuNFs) are used to facilitate accelerated self-healing of bromobutyl rubber (BIIR). The heater and BIIR layer are separately deposited on each side of a transparent flexible polyethylene terephthalate (PET) substrate. A pre-notched crack on the BIIR layer was bridged due to heating facilitated by CuNFs. In the corrosion test, a cracked BIIR layer covered a steel substrate. An accelerated self-healing of the crack due to the transparent copper nanofiber heater facilitated an anti-corrosion protective effect of the BIIR layer.

Spin-filter specular spin valves

NASA Astrophysics Data System (ADS)

Lu, Z. Q.; Pan, G.; Jibouri, A. A.; Zheng, Yaunkai

2002-01-01

Both a thin free layer and high magnetoresistance (MR) ratio are required in spin valves for high magnetic density recording heads. In traditional spin valve structures, reducing the free layer normally results in a reduction in MR. We report here on a spin-filter specular spin valve with structure Ta 3.5 nm/NiFe 2 nm/IrMn 6 nm/CoFe 1.5 nm/Nol/CoFe 2 nm/Cu 2.2 nm/CoFe tF/Cu tSF/Nol2/Ta 3 nm, which is demonstrated to maintain MR ratio higher than 12% even when the CoFe free layer is reduced to 1 nm. The semiclassical Boltzmann transport equation was used to simulate MR ratio. An optimized MR ratio of ˜14.5% was obtained when tF was about 1.5 nm and tSF about 1.0 nm as a result of the balance between the increase in electron mean free path difference and current shunting through conducting layer. It is found that the Cu enhancing layer not only enhances the MR ratio but also improves soft magnetic properties of CoFe free layer due to the low atomic intermixing observed between Co and Cu. The CoFe free layer of 1-4 nm exhibits a low coercivity of ˜3 Oe even after annealing at 270 °C for 7 h in a field of 1 kOe. Furthermore, the interlayer coupling field Hint between free layer and pinned layer can be controlled by balancing the Rudermann-Kittel-(Kasuya)-Yosida and magnetostatic coupling. Such a thin soft CoFe free layer is particularly attractive for high density read sensor application.

Solid Liquid Interdiffusion Bonding of (Pb, Sn)Te Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

NASA Astrophysics Data System (ADS)

Chuang, T. H.; Lin, H. J.; Chuang, C. H.; Yeh, W. T.; Hwang, J. D.; Chu, H. S.

2014-12-01

A (Pb, Sn)Te thermoelectric element plated with a Ni barrier layer and a Ag reaction layer has been joined with a Cu electrode coated with Ag and Sn thin films using a solid-liquid interdiffusion bonding method. This method allows the interfacial reaction between Ag and Sn such that Ag3Sn intermetallic compounds form at low temperature and are stable at high temperature. In this study, the bonding strength was about 6.6 MPa, and the specimens fractured along the interface between the (Pb, Sn)Te thermoelectric element and the Ni barrier layer. Pre-electroplating a film of Sn with a thickness of about 1 μm on the thermoelectric element and pre-heating at 250°C for 3 min ensures the adhesion between the thermoelectric material and the Ni barrier layer. The bonding strength is thus increased to a maximal value of 12.2 MPa, and most of the fractures occur inside the thermoelectric material. During the bonding process, not only the Ag3Sn intermetallics but also Cu6Sn5 forms at the Ag3Sn/Cu interface, which transforms into Cu3Sn with increases in the bonding temperature or bonding time.

Probing the Dipolar Coupling in a Heterospin Endohedral Fullerene-Phthalocyanine Dyad.

PubMed

Zhou, Shen; Yamamoto, Masanori; Briggs, G Andrew D; Imahori, Hiroshi; Porfyrakis, Kyriakos

2016-02-03

Paramagnetic endohedral fullerenes and phthalocyanine (Pc) complexes are promising building blocks for molecular quantum information processing, for which tunable dipolar coupling is required. We have linked these two spin qubit candidates together and characterized the resulting electron paramagnetic resonance properties, including the spin dipolar coupling between the fullerene spin and the copper spin. Having interpreted the distance-dependent coupling strength quantitatively and further discussed the antiferromagnetic aggregation effect of the CuPc moieties, we demonstrate two ways of tuning the dipolar coupling in such dyad systems: changing the spacer group and adjusting the solution concentration.

Investigations of YBa2Cu3O y films sputtered onto a substrate of amorphous quartz with a platinum buffer layer

NASA Astrophysics Data System (ADS)

Blinova, Yu. V.; Snigirev, O. V.; Porokhov, N. V.; Evlashin, S. A.

2017-10-01

Results of investigations using X-ray diffraction and scanning electron microscopy of composite materials made from YBa2Cu3O y films sputtered (using various regimes) onto a substrate of amorphous quartz with a platinum buffer layer, have been given.

Hybrid Cu(2)O diode with orientation-controlled C(60) polycrystal.

PubMed

Izaki, Masanobu; Saito, Takamasa; Ohata, Tatsuya; Murata, Kazufumi; Fariza, Binti Mohamad; Sasano, Junji; Shinagawa, Tsutomu; Watase, Seiji

2012-07-25

We report on a hybrid diode composed of a 2.1 eV bandgap p-cupric oxide (Cu2O) semiconductor and fullerene (C60) layer with a face-centered cubic configuration. The hybrid diode has been constructed by electrodeposition of the 500 nm thick Cu2O layer in a basic aqueous solution containing a copper acetate hydrate and lactic acid followed by a vacuum evaporation of the 50 nm thick C60 layer at the evaporation rate from 0.25 to 1.0 Å/s. The C60 layers prepared by the evaporation possessed a face-centered cubic configuration with the lattice constant of 14.19 A, and the preferred orientation changed from random to (111) plane with decrease in the C60 evaporation rate from 1.0 to 0.25 Å/s. The hybrid p-Cu2O/C60 diode showed a rectification feature regardless of the C60 evaporation rate, and both the rectification ratio and forward current density improved with decrease in the C60 evaporation rate. The excellent rectification with the ideality factor of approximately 1 was obtained for the 500 nm thick (111)-Cu2O/50 nm thick (111)-fcc-C60/bathocuproine (BCP) diode at the C60 evaporation rate of 0.25 Å /s. The hybrid Cu2O/C60 diode prepared by stacking the C60 layer at the evaporation rate of 0.25 Å/s revealed the photovoltaic performance of 8.7 × 10(-6)% in conversion efficiency under AM1.5 illumination, and the conversion efficiency changed depending on the C60 evaporation rate.

Monte Carlo study of the magnetic properties in a bilayer dendrimer structure with non-magnetic layers

NASA Astrophysics Data System (ADS)

Jabar, A.; Masrour, R.

2017-12-01

In this paper, we study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions and magnetic layer effects on the bilayer transitions of a spin-5/2 Blume-Capel model formed by two magnetic blocs separated by a non-magnetic spacer of finite thickness. The thermalization process of magnetization for systems sizes has been given. We have shown that the magnetic order in the two magnetic blocs depend on the thickness of the magnetic layer. In the total magnetization profiles, the susceptibility peaks correspond to the reduced critical temperature. This critical temperature is displaced towards higher temperatures when increasing the number of magnetic layers. In addition, we have discussed and interpreted the behaviors of the magnetic hysteresis loops.

Preparation of Hollow CuO@SiO2 Spheres and Its Catalytic Performances for the NO + CO and CO Oxidation

PubMed Central

Niu, Xiaoyu; Zhao, Tieying; Yuan, Fulong; Zhu, Yujun

2015-01-01

The hollow CuO@SiO2 spheres with a mean diameter of 240 nm and a thin shell layer of about 30 nm in thickness was synthesized using an inorganic SiO2 shell coating on the surface of Cu@C composite that was prepared by a two-step hydrothermal method. The obtained hollow CuO@SiO2 spheres were characterized by ICP-AES, nitrogen adsorption-desorption, SEM, TEM, XRD, H2-TPR, CO-TPR, CO-TPD and NO-TPD. The results revealed that the hollow CuO@SiO2 spheres consist of CuO uniformly inserted into SiO2 layer. The CuO@SiO2 sample exhibits particular catalytic activities for CO oxidation and NO + CO reactions compared with CuO supported on SiO2 (CuO/SiO2). The higher catalytic activity is attributed to the special hollow shell structure that possesses much more highly dispersed CuO nanocluster that can be easy toward the CO and NO adsorption and the oxidation of CO on its surface. PMID:25777579

Structure and superconductivity in (Bi(0.35)Cu(0.65))Sr2YCu2O7 and related materials

NASA Technical Reports Server (NTRS)

Jennings, R. A.; Williams, S. P.; Greaves, C.

1995-01-01

The recently reported (Bi/Cu)Sr2YCu2O7 phase has been studied by time of flight powder neutron diffraction. The proposed 1212 structure has been confirmed and refinements have shown the oxygen in the (Bi/Cu)O layer is displaced by 0.78 A from the ideal (1/2,1/2,0) site (P4/mmm space group) along /100/. Bond Valence Sum calculations have suggested oxidation states of Bi(5+) and Cu(2+) for the cations in the (Bi/Cu)O layers. The material is non-superconducting and all attempts to induce superconductivity have been unsuccessful. Work on the related material (Ce/Cu)Sr2YCu2O7 has shown the ideal Ce content to be 0.5 Ce per formula unit. The introduction of Ba (10%) onto the Sr site dramatically increases phase stability and also induces superconductivity (62 K).

Low-temperature structural and transport anomalies in Cu2Se

NASA Astrophysics Data System (ADS)

Chi, Hang; Kim, Hyoungchul; Thomas, John C.; Shi, Guangsha; Sun, Kai; Abeykoon, Milinda; Bozin, Emil S.; Shi, Xiaoya; Li, Qiang; Shi, Xun; Kioupakis, Emmanouil; Van der Ven, Anton; Kaviany, Massoud; Uher, Ctirad

2014-05-01

Through systematic examination of symmetrically nonequivalent configurations, first-principles calculations have identified a new ground state of Cu2Se, which is constructed by repeating sextuple layers of Se-Cu-Cu-Cu-Cu-Se. The layered nature is in accord with electron and x-ray diffraction studies at and below room temperature and also is consistent with transport properties. Magnetoresistance measurements at liquid helium temperatures exhibit cusp-shaped field dependence at low fields and evolve into quasilinear field dependence at intermediate and high fields. These results reveal the existence of weak antilocalization effect, which has been analyzed using a modified Hikami, Larkin, and Nagaoka model, including a quantum interference term and a classical quadratic contribution. Fitting parameters suggest a quantum coherence length L of 175 nm at 1.8 K. With increasing temperature, the classical parabolic behavior becomes more dominant, and L decreases as a power law of T-0.83.

Reaction-diffusion-induced explosive crystallization in a metal-selenium nanometer film structure

NASA Astrophysics Data System (ADS)

Kogai, V. Ya.

2016-03-01

Experimental data for reaction-diffusion-induced explosive crystallization in a nanodimensional metal (Cu, Ag)/selenium structure are presented. It is found that after the metal layer has completely diffused into the amorphous Se film, the electrical potential rises from 0.14 to 1.21 V in the Cu(30 nm)/Se(140 nm) heterolayer and from 0.01 to 1.17 V in the Ag(30 nm)/Se(140 nm) heterolayer. The metals diffusing into the amorphous Se layer interact with Se, forming nuclei of a new phase (CuSe or Ag2Se). The intense growth of the CuSe and Ag2Se crystallization centers results in a considerable liberation of latent energy in the form of phase transformation heat and in explosive growth of CuSe and Ag2Se nanocrystalline particles. The mean size of CuSe and Ag2Se crystallites equals 25 and 50 nm, respectively.

Raman study of the thermal stability of HgBa 2CaCu 2O 6+δ and HgBa 2Ca 2Cu 3O 8+δ

NASA Astrophysics Data System (ADS)

Chang, H.; He, Z. H.; Meng, R. L.; Xue, Y. Y.; Chu, C. W.

1995-02-01

We studied the thermal stability of HgBa 2CaCu 2O 6+δ and HgBa 2Ca 2Cu 3O 8+δ at varying laser irradiation power. Each compound has two Raman bands around 570 and 590 cm -1 which are assigned to the vibrations of the interstitial oxygen in HgO δ layers and the apical oxygen in BaO layers, respectively. The 590 cm -1 band shifts position slightly with irradiation, and both the intensity and position of the 570 cm -1 band vary significantly with the laser power. The occupation factor of the interstitial oxygen is sensitive to the annealing temperature. At higher temperatures (550-600°C), both compounds decompose into various (Ba,Cu)-oxides such as Ba 1- xCa xCuO 2.

Investigating the geometrical preferences of a flexible benzimidazolone-based linker in the synthesis of coordination polymers

PubMed Central

Jones, Corey L.; Marsden, Elizabeth A.; Nevin, Adam C.; Kariuki, Benson M.; Bhadbhade, Mohan M.; Martin, Adam D.

2017-01-01

A series of new group 2 coordination polymers, MgL ={MgL(H2O)(DMF)0.75}∞, CaL = {CaL(DMF)2}∞, SrL = {SrL(H2O)0.5}∞ and BaL = {BaL(H2O)0.5}∞, were synthesized using a flexible benzimidazolone diacetic acid linker (H2L) in which the two carboxylic acid binding sites are connected to a planar core via {–CH2–} spacers that can freely rotate in solution. In a ‘curiosity-led' diversion from group 2 metals, the first row transition metal salts Mn2+, Cu2+ and Zn2+ were also reacted with L to yield crystals of MnL = {MnL(DMF)(H2O)3.33}∞, Cu3L2 = {Cu3L2(DMF)2(CHO2)2}∞ and ZnL = {ZnL(DMF)}∞. Crystal structures were obtained for all seven materials. All structures form as two-dimensional sheets and contain six-coordinate centres, with the exception of ZnL, which displays tetrahedrally coordinated metal centres, and Cu3L2, which contains square planar coordinated metal centres and Cu paddle-wheels. In each structure, the linker adopts one of two distinct conformations, with the carboxylate groups either cis or trans with respect to the planar core. All materials were also characterized by powder X-ray diffraction and thermogravimetric analysis. PMID:29308246

Transmission electron microscopy for archaeo-materials research: Nanoparticles in glazes and red/yellow glass and inorganic pigments in painted context

NASA Astrophysics Data System (ADS)

Fredrickx, Peggy

2004-10-01

This dissertation addresses the application of Transmission Electron Microscopy (TEM) to historic objects, concentrating on colour-causing nanoparticles in vitreous materials and pigments with the focus on substrates in lake pigments used in thin glaze layers, and on manuscript illustrations. TEM is well suited for archaeometry: it gives chemical elemental information, imaging and diffraction information and the amount of material needed is minimal. Sample preparation techniques suitable for historic materials are discussed. Nanoparticles can be incorporated in glass through staining. Yellow coloured glass plates contain Ag particles. Baking temperatures and different Ag-salts determine the density of the nanoparticles. Dense layers cause more saturated colours. Red glass plates can be obtained by staining with Cu-salts. Metallic Cu particles have a diameter of about 24 nm. Comparison with XRF results suggests that often a combination of Cu and Ag was used for warmer colours. Red glass can be "flashed" to the substrate glass. Then, the colour is also caused by metallic Cu particles. The red layer often displays a band structure of stacked red and transparent bands. In the transparent bands, no nanoparticles have been found. In lustre-ware, Ag and metallic Cu occur. Their distribution throughout the material determines the colour of the fragment. In both there is a dense top layer with particles of sizes smaller than 15 nm. If this top layer consists of Ag particles, the resulting colour is golden. In one sample, under this top layer the amount of Cu particles increases. This underlying layer causes the colour to redden. Particles are mainly between 5 and 15 nm in diameter. Using reconstructions, it has been demonstrated that TEM can detect and identify a stacking of thin layers in parchment decorations. A pink powder sample from Pompeii consists of a basis of allophane type clay. The lake substrates consist of Al, O, S and their amorphous structure does not seem to be noticeably changed by the addition of organic colourants. Hydrocerussite crystals (i.e. the main component of lead white) have been added to some historic glaze layers. Further it was confirmed that sometimes crystalline CaSO4 particles were added to lakes.

Study of high-Tc interface superconductivity in La1.55Sr0.45CuO4/La2CuO4 heterostructures at high magnetic fields and frequencies

NASA Astrophysics Data System (ADS)

Gasparov, V. A.; Audouard, A.; Drigo, L.; He, Xi; Bozovic, I.

2017-10-01

We have synthesized heterostructures that consist of a layer of a cuprate insulator, La2CuO4, and a layer of a nonsuperconducting cuprate metal, La1.55Sr0.45CuO4. Such bilayers show high-Tc interface superconductivity confined within a single CuO2 plane. Here, we explore the behavior of interface superconductivity at high frequencies (up to 50 MHz) under high magnetic fields (up to 56 T). We find that interface superconductivity persists up to very high perpendicular fields (exceeding 40 T). The critical magnetic field Hm(T) shows an upward divergence with decreasing temperature suggestive of vortex-lattice melting, similar to what is observed in bulk superconducting cuprates.

Thermal Stability of Silver Paste Sintering on Coated Copper and Aluminum Substrates

NASA Astrophysics Data System (ADS)

Pei, Chun; Chen, Chuantong; Suganuma, Katsuaki; Fu, Guicui

2018-01-01

The thermal stability of silver (Ag) paste sintering on coated copper (Cu) and aluminum (Al) substrates has been investigated. Instead of conventional zincating or nickel plating, magnetron sputtering was used to achieve coating with titanium (Ti) and Ag. Silicon (Si) chips were bonded to coated Cu and Al substrates using a mixture of submicron Ag flakes and particles under 250°C and 0.4 MPa for 30 min. The joints were then subject to aging testing at 250°C for duration of 200 h, 500 h, and 1000 h. Two types of joints exhibited satisfactory initial shear strength above 45 MPa. However, the shear strength of the joints on Al substrate decreased to 28 MPa after 1000 h of aging, while no shear strength decline was detected for the joints on Cu substrate. Fracture surface analysis revealed that the vulnerable points of the two types of joints were (1) the Ag layer and (2) the interface between the Ti layer and Cu substrate. Based on the results of scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), and simulations, cracks in the Ag layer were identified as the cause of the shear strength degradation in the joints on Al substrate. The interface evolution of the joints on Cu substrate was ascribed to Cu migration and discontinuity points that initialized in the Ti layer. This study reveals that Al exhibited superior thermal stability with sintered Ag paste.

Orientation dependence of heterogeneous nucleation at the Cu-Pb solid-liquid interface.

PubMed

Palafox-Hernandez, J Pablo; Laird, Brian B

2016-12-07

In this work, we examine the effect of surface structure on the heterogeneous nucleation of Pb crystals from the melt at a Cu substrate using molecular-dynamics (MD) simulation. In a previous work [Palafox-Hernandez et al., Acta Mater. 59, 3137 (2011)] studying the Cu/Pb solid-liquid interface with MD simulation, we observed that the structure of the Cu(111) and Cu(100) interfaces was significantly different at 625 K, just above the Pb melting temperature (618 K for the model). The Cu(100) interface exhibited significant surface alloying in the crystal plane in contact with the melt. In contrast, no surface alloying was seen at the Cu(111) interface; however, a prefreezing layer of crystalline Pb, 2-3 atomic planes thick and slightly compressed relative to bulk Pb crystal, was observed to form at the interface. We observe that at the Cu(111) interface the prefreezing layer is no longer present at 750 K, but surface alloying in the Cu(100) interface persists. In a series of undercooling MD simulations, heterogeneous nucleation of fcc Pb is observed at the Cu(111) interface within the simulation time (5 ns) at 592 K-a 26 K undercooling. Nucleation and growth at Cu(111) proceeded layerwise with a nearly planar critical nucleus. Quantitative analysis yielded heterogeneous nucleation barriers that are more than two orders of magnitude smaller than the predicted homogeneous nucleation barriers from classical nucleation theory. Nucleation was considerably more difficult on the Cu(100) surface-alloyed substrate. An undercooling of approximately 170 K was necessary to observe nucleation at this interface within the simulation time. From qualitative observation, the critical nucleus showed a contact angle with the Cu(100) surface of over 90°, indicating poor wetting of the Cu(100) surface by the nucleating phase, which according to classical heterogeneous nucleation theory provides an explanation of the large undercooling necessary to nucleate on the Cu(100) surface, relative to Cu(111), whose surface is more similar to the nucleating phase due to the presence of the prefreezing layer.

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

Origin of the energy level alignment at organic/organic interfaces: The role of structural defects

NASA Astrophysics Data System (ADS)

Bussolotti, Fabio; Yang, Jinpeng; Hinderhofer, Alexander; Huang, Yuli; Chen, Wei; Kera, Satoshi; Wee, Andrew T. S.; Ueno, Nobuo

2014-03-01

In this paper, the electronic properties of as-deposited and N2-exposedCuPc/F16CuPc interface, a prototype system for organic photovoltaic applications, are investigated by using ultralow background, high-sensitivity photoemission spectroscopy. It is found that (i) N2 exposure significantly modifies the energy level alignment (ELA) at the interface between CuPc and F16CuPc layer and (ii) the direction of the N2-induced energy level shift of the CuPc depends on the position of the Fermi level (EF) in the CuPc highest occupied molecular orbital-lowest unoccupied molecular orbital gap of the as-deposited film. These observations are related to the changes in the density of gap states (DOGS) produced by structural imperfections in the molecular packing geometry, as introduced by the N2 penetration into the CuPc layer. This result demonstrates the key role of structure-induced DOGS in controlling the ELA at organic/organic interfaces.

Nonoscillatory behavior in the magnetoresistance of Cu/Ni superlattice (abstract)

NASA Astrophysics Data System (ADS)

Abdul-Razzaq, W.

1994-05-01

It was reported that in many magnetic/nonmagnetic metallic multilayered systems, the interlayer-coupling oscillates between antiferromagnetic and ferromagnetic upon increasing the thickness of the nonmagnetic layer. This was evident by the oscillation of the magnetoresistance (MR) in these materials. Recently however, Harp, Parkin et al.1 found that the MR and coupling strength change monotonically with increasing Cu thickness in Co/Cu multilayers deposited by MBE, contradicting results on similar samples made by sputtering in which the MR was oscillatory. In this study, we show that in the Cu/Ni superlattice made by sputtering, the MR varies monotonically with increasing Cu thickness. This nonoscillatory behavior was observed at room temperature and at 77 K and, regardless of the direction of the magnetic field in relation to the direction of the current. The resistivity at zero magnetic field as a function of temperature also changes systematically with reducing the Cu layer thickness. The nature of the magnetic state in Cu/Ni superlattice is discussed in light of the transport property measurements.

Dendritic Ni(Cu)-polypyrrole hybrid films for a pseudo-capacitor.

PubMed

Choi, Bit Na; Chun, Woo Won; Qian, Aniu; Lee, So Jeong; Chung, Chan-Hwa

2015-11-28

Dendritic Ni(Cu)-polypyrrole hybrid films are fabricated for a pseudo-capacitor in a unique morphology using two simple methods: electro-deposition and electrochemical de-alloying. Three-dimensional structures of porous dendrites are prepared by electro-deposition within the hydrogen evolution reaction (HER) at a high cathodic potential; the high-surface-area structure provides sufficient redox reactions between the electrodes and the electrolyte. The dependence of the active-layer thickness on the super-capacitor performance is also investigated, and the 60 μm-thick Ni(Cu)PPy hybrid electrode presents the highest performance of 659.52 F g(-1) at the scan rate of 5 mV s(-1). In the thicker layers, the specific capacitance became smaller due to the diffusion limitation of the ions in an electrolyte. The polypyrrole-hybridization on the porous dendritic Ni(Cu) electrode provides superior specific capacitance and excellent cycling stability due to the improvement in electric conductivity by the addition of conducting polypyrrole in the matrices of the dendritic nano-porous Ni(Cu) layer and the synergistic effect of composite materials.

Non-conventional Pt-Cu alloy/carbon paper electrochemical catalyst formed by electrodeposition using hydrogen bubble as template

NASA Astrophysics Data System (ADS)

Kim, Youngkwang; Lee, Hyunjoon; Lim, Taeho; Kim, Hyun-Jong; Kwon, Oh Joong

2017-10-01

With emerging stability issues in fuel cell technology, a non-conventional catalyst not supported on carbon materials has been highlighted because it can avoid negative influences of carbon support materials on the stability, such as carbon corrosion. The nanostructured thin film catalyst is representative of non-conventional catalysts, which shows improved stability, enhanced mass specific activity, and fast mass transfer at high current densities. However, the nanostructured thin film catalyst usually requires multi-step processes for fabrication, making its mass production complex and irreproducible. We introduce a Pt-Cu alloy nanostructured thin film catalyst, which can be simply prepared by electrodeposition. By using hydrogen bubbles as a template, a three-dimensional free-standing foam of Cu was electrodeposited directly on the micro-porous layer/carbon paper and it was then displaced with Pt by simple immersion. The structure characterization revealed that a porous thin Pt-Cu alloy catalyst layer was successfully formed on the micro-porous layer/carbon paper. The synthesized Pt-Cu alloy catalyst exhibited superior durability compared to a conventional Pt/C in single cell test.

Large-Scale Synthesis and Comprehensive Structure Study of δ-MnO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jue; Yu, Lei; Hu, Enyuan

Layered δ-MnO 2 (birnessites) are ubiquitous in nature and have also been reported to work as promising water oxidation catalysts or rechargeable alkali-ion battery cathodes when fabricated under appropriate conditions. Although tremendous effort has been spent on resolving the structure of natural/synthetic layered δ-MnO 2 in the last few decades, no conclusive result has been reached. In this Article, we report an environmentally friendly route to synthesizing homogeneous Cu-rich layered δ-MnO 2 nanoflowers in large scale. The local and average structure of synthetic Cu-rich layered δ-MnO 2 has been successfully resolved from combined Mn/Cu K-edge extended X-ray fine structure spectroscopymore » and X-ray and neutron total scattering analysis. It is found that appreciable amounts (~8%) of Mn vacancies are present in the MnO 2 layer and Cu 2+ occupies the interlayer sites above/below the vacant Mn sites. Effective hydrogen bonding among the interlayer water molecules and adjacent layer O ions has also been observed for the first time. These hydrogen bonds are found to play the key role in maintaining the intermediate and long-range stacking coherence of MnO 2 layers. Quantitative analysis of the turbostratic stacking disorder in this compound was achieved using a supercell approach coupled with anisotropic particle-size-effect modeling. Furthermore, the present method is expected to be generally applicable to the structural study of other technologically important nanomaterials.« less

Large-Scale Synthesis and Comprehensive Structure Study of δ-MnO 2

DOE PAGES

Liu, Jue; Yu, Lei; Hu, Enyuan; ...

2018-05-30

Layered δ-MnO 2 (birnessites) are ubiquitous in nature and have also been reported to work as promising water oxidation catalysts or rechargeable alkali-ion battery cathodes when fabricated under appropriate conditions. Although tremendous effort has been spent on resolving the structure of natural/synthetic layered δ-MnO 2 in the last few decades, no conclusive result has been reached. In this Article, we report an environmentally friendly route to synthesizing homogeneous Cu-rich layered δ-MnO 2 nanoflowers in large scale. The local and average structure of synthetic Cu-rich layered δ-MnO 2 has been successfully resolved from combined Mn/Cu K-edge extended X-ray fine structure spectroscopymore » and X-ray and neutron total scattering analysis. It is found that appreciable amounts (~8%) of Mn vacancies are present in the MnO 2 layer and Cu 2+ occupies the interlayer sites above/below the vacant Mn sites. Effective hydrogen bonding among the interlayer water molecules and adjacent layer O ions has also been observed for the first time. These hydrogen bonds are found to play the key role in maintaining the intermediate and long-range stacking coherence of MnO 2 layers. Quantitative analysis of the turbostratic stacking disorder in this compound was achieved using a supercell approach coupled with anisotropic particle-size-effect modeling. Furthermore, the present method is expected to be generally applicable to the structural study of other technologically important nanomaterials.« less

Microstructure, corrosion and tribological and antibacterial properties of Ti-Cu coated stainless steel.

PubMed

Jin, Xiaomin; Gao, Lizhen; Liu, Erqiang; Yu, Feifei; Shu, Xuefeng; Wang, Hefeng

2015-10-01

A Ti-Cu coated layer on 316L stainless steel (SS) was obtained by using the Closed Field Unbalanced Magnetron Sputtering (CFUBMS) system to improve antibacterial activity, corrosion and tribological properties. The microstructure and phase constituents of Ti-Cu coated layer were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and glow discharge optical emission spectrometry (GDOES). The corrosion and tribological properties of a stainless steel substrate, SS316L, when coated with Ti-Cu were investigated in a simulated body fluid (SBF) environment. The viability of bacteria attached to the antibacterial surface was tested using the spread plate method. The results indicate that the Ti-Cu coated SS316L could achieve a higher corrosion polarization resistance and a more stable corrosion potential in an SBF environment than the uncoated SS316L substrate. The desirable corrosion protection performance of Ti-Cu may be attributable to the formation of a Ti-O passive layer on the coating surface, protecting the coating from further corrosion. The Ti-Cu coated SS316L also exhibited excellent wear resistance and chemical stability during the sliding tests against Si3N4 balls in SBF environment. Moreover, the Ti-Cu coatings exhibited excellent antibacterial abilities, where an effective reduction of 99.9% of Escherichia coli (E.coli) within 12h was achieved by contact with the modified surface, which was attributed to the release of copper ions when the Ti-Cu coatings are in contact with bacterial solution. Copyright © 2015 Elsevier Ltd. All rights reserved.

Evaluation of different strategies for quantitative depth profile analysis of Cu/NiCu layers and multilayers via pulsed glow discharge - Time of flight mass spectrometry

NASA Astrophysics Data System (ADS)

Muñiz, Rocío; Lobo, Lara; Németh, Katalin; Péter, László; Pereiro, Rosario

2017-09-01

There is still a lack of approaches for quantitative depth-profiling when dealing with glow discharges (GD) coupled to mass spectrometric detection. The purpose of this work is to develop quantification procedures using pulsed GD (PGD) - time of flight mass spectrometry. In particular, research was focused towards the depth profile analysis of Cu/NiCu nanolayers and multilayers electrodeposited on Si wafers. PGDs are characterized by three different regions due to the temporal application of power: prepeak, plateau and afterglow. This last region is the most sensitive and so it is convenient for quantitative analysis of minor components; however, major elements are often saturated, even at 30 W of applied radiofrequency power for these particular samples. For such cases, we have investigated two strategies based on a multimatrix calibration procedure: (i) using the afterglow region for all the sample components except for the major element (Cu) that was analyzed in the plateau, and (ii) using the afterglow region for all the elements measuring the ArCu signal instead of Cu. Seven homogeneous certified reference materials containing Si, Cr, Fe, Co, Ni and Cu have been used for quantification. Quantitative depth profiles obtained with these two strategies for samples containing 3 or 6 multilayers (of a few tens of nanometers each layer) were in agreement with the expected values, both in terms of thickness and composition of the layers.

Morphological and Microstructural Evolution of Phosphorous-Rich Layer in SnAgCu/Ni-P UBM Solder Joint

NASA Astrophysics Data System (ADS)

Lin, Yung-Chi; Shih, Toung-Yi; Tien, Shih-Kang; Duh, Jenq-Gong

2007-11-01

Interfacial morphologies and microstructure of Sn-3Ag-0.5Cu/Ni-P under bump metallization (UBM) with various phosphorous contents were investigated by transmission electron microscope (TEM) and field emission electron probe microanalyzer (FE-EPMA). It was revealed that as the Ni-Sn-P compound was formed between the solder matrix and Ni-P UBM, the conventionally so-called phosphorous-rich (P-rich) layer was transformed to a series of layer compounds, including Ni3P, Ni12P5 and Ni2P. The relationship between Ni-Sn-P formation and evolution of P-rich layers was probed by electron microscopic characterization with the aid of the phase diagram of Ni-P. On the basis of the TEM micrograph, the selected area diffraction (SAD) pattern, and the FE-EPMA results, the detailed phase evolution of P-rich layers in the SnAgCu/Ni-P joint was revealed and proposed.

Production and Precipitation Hardening of Beta-Type Ti-35Nb-10Cu Alloy Foam for Implant Applications

NASA Astrophysics Data System (ADS)

Mutlu, Ilven; Yeniyol, Sinem; Oktay, Enver

2016-04-01

In this study, beta-type Ti-35Nb-10Cu alloy foams were produced by powder metallurgy method for dental implant applications. 35% Nb was added to stabilize the beta-Ti phase with low Young's modulus. Cu addition enhanced sinterability and gave precipitation hardening capacity to the alloy. Sintered specimens were precipitation hardened in order to enhance the mechanical properties. Electrochemical corrosion behavior of the specimens was examined by electrochemical impedance spectroscopy in artificial saliva. Electrochemical impedance spectroscopy results indicated that the oxide film on the surface of foam is a bi-layer structure consisting of outer porous layer and inner barrier layer. Impedance values of barrier layer were higher than porous layer. Corrosion resistance of specimens decreased at high fluoride concentrations and at low pH of artificial saliva. Corrosion resistance of alloys was slightly decreased with aging. Mechanical properties, microstructure, and surface roughness of the specimens were also examined.

Application Prospects of Multilayer Film Shields for Space Research Instrumentation

NASA Astrophysics Data System (ADS)

Nyunt, P. W.; Vlasik, K. F.; Grachev, V. M.; Dmitrenko, V. V.; Novikov, A. S.; Petrenko, D. V.; Ulin, S. E.; Uteshev, Z. M.; Chernysheva, I. V.; Shustov, A. E.

We have studied the magnetic properties of multilayer film cylindrical configuration shields (MFS) based on NiFe / Cu. The studied samples were prepared by electrode position. MFS were constituted by alternating layers of NiFe and Cu, deposited on an aluminum cylinder with diameter of 4 cm, length of 13 cm and 0.5 cm thickness. The thickness of each ferromagnetic layer varied from 10 to 150 μm, and the thickness of Cu layers was 5 μm. Five-samples in which the number of ferromagnetic layers varied from 3 to 45 and copper - from 2 to 44 were tested. The best shielding efficiency was achieved at the maximum number of layers and comprised about 102. Permalloy multilayer foil shield at the same total thickness has several times less efficiency in comparison with MFS. The description of a prototype of the charged particles telescope for space application is presented. Results of its testing regarding sensitivity to the constant magnetic field are described.

Atomic scale real-space mapping of holes in YBa2Cu3O(6+δ).

PubMed

Gauquelin, N; Hawthorn, D G; Sawatzky, G A; Liang, R X; Bonn, D A; Hardy, W N; Botton, G A

2014-07-15

The high-temperature superconductor YBa2Cu3O(6+δ) consists of two main structural units--a bilayer of CuO2 planes that are central to superconductivity and a CuO(2+δ) chain layer. Although the functional role of the planes and chains has long been established, most probes integrate over both, which makes it difficult to distinguish the contribution of each. Here we use electron energy loss spectroscopy to directly resolve the plane and chain contributions to the electronic structure in YBa2Cu3O6 and YBa2Cu3O7. We directly probe the charge transfer of holes from the chains to the planes as a function of oxygen content, and show that the change in orbital occupation of Cu is large in the chain layer but modest in CuO2 planes, with holes in the planes doped primarily into the O 2p states. These results provide direct insight into the local electronic structure and charge transfers in this important high-temperature superconductor.

Detection of s-wave superconductivity on monolayer CuO2 films on Bi2Sr2CaCu2O8+δ.

NASA Astrophysics Data System (ADS)

Wang, Yang; Zhong, Yong; Han, Sha; Lv, Yanfeng; Wang, Wenlin; Zhang, Ding; Ding, Hao; Zhang, Yimin; Wang, Lili; He, Ke; Song, Canli; Ma, Xucun; Xue, Qikun

High temperature superconductivity emerges when the CuO2 layer touches the doped charge reservoir blocks. The redistributed charge carriers at these interfaces condense into coherent Cooper pairs, albeit the exact underlying mechanism is still highly controversial. Targeting at this, we have mimicked the CuO2/charge reservoir interface by depositing the monolayer CuO2 films on optimal doped Bi2Sr2CaCu2O8+δ substrates. Direct investigation on these superconducting CuO2 films, however, yields results in stark contrast with the common recognition. Despite of the well-known V shaped pseudogap, a U shaped gap is identified. This U shaped gap disappears at TC and is indifference to K, Cs and Ag adsorbates, in line with the traditional s-wave superconductivity. In view of these results, we propose that superconductivity in cuprates may indeed stem from the modulation doping induced two dimensional hole liquid, which is confined in the CuO2 layers. NSF and MOST of China.

Impact of molybdenum out diffusion and interface quality on the performance of sputter grown CZTS based solar cells.

PubMed

Dalapati, Goutam Kumar; Zhuk, Siarhei; Masudy-Panah, Saeid; Kushwaha, Ajay; Seng, Hwee Leng; Chellappan, Vijila; Suresh, Vignesh; Su, Zhenghua; Batabyal, Sudip Kumar; Tan, Cheng Cheh; Guchhait, Asim; Wong, Lydia Helena; Wong, Terence Kin Shun; Tripathy, Sudhiranjan

2017-05-02

We have investigated the impact of Cu 2 ZnSnS 4 -Molybdenum (Mo) interface quality on the performance of sputter-grown Cu 2 ZnSnS 4 (CZTS) solar cell. Thin film CZTS was deposited by sputter deposition technique using stoichiometry quaternary CZTS target. Formation of molybdenum sulphide (MoS x ) interfacial layer is observed in sputter grown CZTS films after sulphurization. Thickness of MoS x layer is found ~142 nm when CZTS layer (550 nm thick) is sulphurized at 600 °C. Thickness of MoS x layer significantly increased to ~240 nm in case of thicker CZTS layer (650 nm) under similar sulphurization condition. We also observe that high temperature (600 °C) annealing suppress the elemental impurities (Cu, Zn, Sn) at interfacial layer. The amount of out-diffused Mo significantly varies with the change in sulphurization temperature. The out-diffused Mo into CZTS layer and reconstructed interfacial layer remarkably decreases series resistance and increases shunt resistance of the solar cell. The overall efficiency of the solar cell is improved by nearly five times when 600 °C sulphurized CZTS layer is applied in place of 500 °C sulphurized layer. Molybdenum and sulphur diffusion reconstruct the interface layer during heat treatment and play the major role in charge carrier dynamics of a photovoltaic device.

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Copper/carbon coated lithium sodium titanate as advanced anode material for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Wu, Kaiqiang; Lin, Xiaoting; Shao, Lianyi; Shui, Miao; Long, Nengbing; Ren, Yuanlong; Shu, Jie

2014-08-01

Core-shell Li2Na2Ti6O14@Cu/C is prepared by a preliminary formation of Li2Na2Ti6O14 by solid state reaction and a following coating process with Cu/C layer by thermal decomposition. The amorphous Cu/C coating layer reveals a thickness of 5 nm on the surface of Li2Na2Ti6O14, which improves the electronic conductivity and charge transfer rate of active materials. As a result, Li2Na2Ti6O14@Cu/C shows lower electrochemical polarization and quicker kinetic behavior compared to bare Li2Na2Ti6O14. Cycled at 50 mA g-1, Li2Na2Ti6O14@Cu/C can deliver a reversible capacity of 120.3 mAh g-1 after 50 cycles, which is much higher than the value of 96.8 mAh g-1 obtained by Li2Na2Ti6O14. Even kept at 400 mA g-1, a reversible lithium storage capacity of 76.3 mAh g-1 can be delivered by Li2Na2Ti6O14@Cu/C. The improved electrochemical properties of Li2Na2Ti6O14 are attributed to the electronic conductive Cu/C coating layer on the surface.

Bandgap Engineering of Cu(In 1-xGax)Se 2 Absorber Layers Fabricated using CuInSe 2 and CuGaSe 2 Targets for One-Step Sputtering Process

DOE PAGES

Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

2016-10-17

Here we have demonstrated that the bandgap of Cu(In 1-xGa x)Se 2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe 2(CIS) and CuGaSe 2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyritemore » phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

Room-temperature synthesis of three-dimensional porous ZnO@CuNi hybrid magnetic layers with photoluminescent and photocatalytic properties

PubMed Central

Guerrero, Miguel; Zhang, Jin; Altube, Ainhoa; García-Lecina, Eva; Roldan, Mònica; Baró, Maria Dolors; Pellicer, Eva; Sort, Jordi

2016-01-01

Abstract A facile synthetic approach to prepare porous ZnO@CuNi hybrid films is presented. Initially, magnetic CuNi porous layers (consisting of phase separated CuNi alloys) are successfully grown by electrodeposition at different current densities using H2 bubbles as a dynamic template to generate the porosity. The porous CuNi alloys serve as parent scaffolds to be subsequently filled with a solution containing ZnO nanoparticles previously synthesized by sol-gel. The dispersed nanoparticles are deposited dropwise onto the CuNi frameworks and the solvent is left to evaporate while the nanoparticles impregnate the interior of the pores, rendering ZnO-coated CuNi 3D porous structures. No thermal annealing is required to obtain the porous films. The synthesized hybrid porous layers exhibit an interesting combination of tunable ferromagnetic and photoluminescent properties. In addition, the aqueous photocatalytic activity of the composite is studied under UV−visible light irradiation for the degradation of Rhodamine B. The proposed method represents a fast and inexpensive approach towards the implementation of devices based on metal-semiconductor porous systems, avoiding the use of post-synthesis heat treatment steps which could cause deleterious oxidation of the metallic counterpart, as well as collapse of the porous structure and loss of the ferromagnetic properties. PMID:27877868

Copper Oxide Thin Films through Solution Based Methods for Electrical Energy Conversion and Storage

NASA Astrophysics Data System (ADS)

Zhu, Changqiong

Copper oxides (Cu2O and CuO), composed of non-toxic and earth abundant elements, are promising materials for electrical energy generation and storage devices. Solution based techniques for creating thin films of these materials, such as electrodeposition, are important to understand and develop because of their potential for realizing substantial energy savings compared to traditional fabrication methods. Cuprous oxide (Cu2O), with its direct band gap, is a p-type semiconductor that is well suited for creating solution-processed photovoltaic devices (solar cells); several key advancements made toward this application are the primary focus of this thesis. Electrodeposition of single-phase, crystalline Cu2O thin films is demonstrated using previously unexplored, acidic lactate/Cu2+ solutions, which has provided additional understanding of the impacts of growth solution chemistry on film formation. The influence of pH on the resulting Cu2O thin film properties is revealed by using the same ligand (sodium lactate) at various solution pH values. Cu2O films grown from acidic lactate solutions can exhibit a distinctive flowerlike, dendritic morphology, in contrast to the faceted, dense films obtained using alkaline lactate solutions. Relative speciation distributions of the various metal complex ions present under different growth conditions are calculated using reported equilibrium association constants and experimentally supported by UV-Visible absorption spectroscopy. Dependence of thin film morphology on the lactate/Cu2+ molar ratio and applied potential is described. Cu2O/eutectic gallium-indium Schottky junction devices are formed and devices are tested under monochromatic green LED illumination. Further surface examination of the Cu2O films using X-ray photoelectron spectroscopy (XPS) reveals the fact that films grown from acidic lactate solution with a small lactate/Cu2+ molar ratio, which exhibit improved photovoltaic performance compared to films grown from basic lactate solution with a large lactate/Cu2+ molar ratio, are sodium-free. This finding stands in contrast to the observation that films grown in basic solution contain a significant amount of sodium impurity at their top surfaces. Therefore, it is concluded that the sodium impurities present in films grown from basic lactate solutions are detrimental to overall photovoltaic device performance by introducing interface traps and recombination centers for charge carriers, which suggests that removing these impurities may be a promising strategy for improving Cu2O based solar cells. It has been found that impurities at the surface of electrodeposited p-Cu2O films can be efficiently removed through the use of concentrated aqueous ammonia solution as a wet etching agent. The performance of Cu 2O homojunction photovoltaic devices incorporating etched p-Cu 2O as the bottom layer is higher compared to devices with as-deposited p-Cu2O layers due to an improvement of the homojunction interface quality. Reducing the density of defect states that act as carrier recombination centers is found to lead to larger open circuit voltages. Zinc-doped cuprous oxide (Zn:Cu2O) thin films have also been prepared via single step electrodeposition from an aqueous solution containing sodium perchlorate. The Zn/Cu molar ratio in the Cu2O films can be tuned by adjusting the magnitude of the applied potential and the sodium perchlorate concentration. Electrical characterization reveals that zinc dopants increase the Fermi level in Zn:Cu2O films, enabling a three-fold improvement in the power conversion efficiency of a fully electrodeposited Cu2O homojunction photovoltaic device. Complementary to the development of Cu2O based photovoltaic devices, the use of solution deposited cupric oxide (CuO) thin films for capacitive energy storage has also been investigated. A seed layer-assisted chemical bath deposition (SCBD) method has been developed to create high quality CuO thin films on transparent conductive electrode (ITO)/glass substrates. A CuO seed layer is formed by the electrodeposition of Cu2O on ITO electrode for 10 s, followed by a brief (15 min) heating step to convert the Cu 2O to CuO. The seed layer is found to be essential for the growth of micrometer-thick, adherent CuO thin films on ITO-coated glass, as no films were observed to form on substrates without a seed layer. The addition of sodium lactate to the SCBD solution can be used to tune the morphology and relative crystallinity of the CuO films. A highly crystalline CuO film has been deposited from a solution without sodium lactate, while a largely amorphous CuO film was realized using lactate/Cu2+ molar ratio equal to 1.0. The CuO film with greater amorphous character exhibited a significantly larger specific capacitance as a redox active electrode compared to the crystalline film (2700 mF/g vs. 96 mF/g).

Vacuum Brazing of WC-8Co Cemented Carbides to Carbon Steel Using Pure Cu and Ag-28Cu as Filler Metal

NASA Astrophysics Data System (ADS)

Zhang, X. Z.; Liu, G. W.; Tao, J. N.; Shao, H. C.; Fu, H.; Pan, T. Z.; Qiao, G. J.

2017-02-01

The wetting and spreading behavior of commercial pure Cu and Ag-28Cu alloy on WC-8Co cemented carbide were investigated by the sessile drop technique. The contact angle of both systems obviously decreases with moderately increasing the wetting temperature. Vacuum brazing of the WC-8Co cemented carbide to SAE1045 steel using the pure Cu or Ag-28Cu as filler metal was further carried out based on the wetting results. The interfacial interactions and joint mechanical behavior involving microhardness, shear strength and fracture were analyzed and discussed. An obvious Fe-Cu-Co transition layer is detected at the WC-8Co/Cu interface, while no obvious reaction layer is observed at the whole WC-8Co/Ag-28Cu/SAE1045 brazing seam. The microhardness values of the two interlayers and the steel substrate near the two interlayers increase more or less, while those of WC-8Co cemented carbide substrates adjacent to the two interlayers decrease. The WC-8Co/SAE1045 joints using pure Cu and Ag-28Cu alloy as filler metals obtain average shear strength values of about 172 and 136 MPa, and both of the joint fractures occur in the interlayers.

Interactions of CuO nanoparticles with the algae Chlorella pyrenoidosa: adhesion, uptake, and toxicity.

PubMed

Zhao, Jian; Cao, Xuesong; Liu, Xiaoyu; Wang, Zhenyu; Zhang, Chenchen; White, Jason C; Xing, Baoshan

2016-11-01

The potential adverse effects of CuO nanoparticles (NPs) have increasingly attracted attention. Combining electron microscopic and toxicological investigations, we determined the adhesion, uptake, and toxicity of CuO NPs to eukaryotic alga Chlorella pyrenoidosa. CuO NPs were toxic to C. pyrenoidosa, with a 72 h EC50 of 45.7 mg/L. Scanning electron microscopy showed that CuO NPs were attached onto the surface of the algal cells and interacted with extracellular polymeric substances (EPS) excreted by the organisms. Transmission electron microscopy (TEM) showed that EPS layer of algae was thickened by nearly 4-fold after CuO NPs exposure, suggesting a possible protective mechanism. In spite of the thickening of EPS layer, CuO NPs were still internalized by endocytosis and were stored in algal vacuoles. TEM and electron diffraction analysis confirmed that the internalized CuO NPs were transformed to Cu2O NPs (d-spacing, ∼0.213 nm) with an average size approximately 5 nm. The toxicity investigation demonstrated that severe membrane damage was observed after attachment of CuO NPs with algae. Reactive oxygen species generation and mitochondrial depolarization were also noted upon exposure to CuO NPs. This work provides useful information on understanding the role of NPs-algae physical interactions in nanotoxicity.

Development of Long REBCO with BMO Coated Conductors by PLD Method with High Production Rate

NASA Astrophysics Data System (ADS)

Ibi, A.; Yoshida, T.; Taneda, T.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

We have been developing long REBa2Cu3O7-δ (RE: Y, Gd and Eu etc.) with BaMO3 (M: Zr, Sn and Hf etc.) coated conductors by the combination of the ion-beam assisted deposition (IBAD) and the pulsed laser deposition (PLD) methods. REBa2Cu3O7-δ with BaMO3 coated conductors showed high in-field performance, therefore, these coated conductors could be expected for the industrial and commercial applications at high temperatures in magnetic fields. However, to realize the low production cost for long REBa2Cu3O7-δ with BaMO3 coated conductors, improvement of the production rate of the REBa2Cu3O7-δ layers containing BaMO3 rods with maintaining high superconducting properties is required. To solve these problems, we have tried deposition of the REBa2Cu3O7-δ layers with high superconducting properties by the PLD method with high production rate. As a result, we have successfully fabricated EuBa2Cu3O7-δ layers containing BaHfO3 rods with high in-field Jc and Ic by the PLD method with high production rate. This EuBa2Cu3O7-δ with BaHfO3 coated conductor exhibit a high Ic value of 412 and 48.7 A/cm-width at 77 K in self-field and 3 T, respectively at the deposition rate of about 40 μm/h and the production rate of 10 m/h for a 1.35 μm EuBCO layer thick.

A new bimetallic plasmonic photocatalyst consisting of gold(core)-copper(shell) nanoparticle and titanium(IV) oxide support

NASA Astrophysics Data System (ADS)

Sato, Yuichi; Naya, Shin-ichi; Tada, Hiroaki

2015-10-01

Ultrathin Cu layers (˜2 atomic layers) have been selectively formed on the Au surfaces of Au nanoparticle-loaded rutile TiO2 (Au@Cu/TiO2) by a deposition precipitation-photodeposition technique. Cyclic voltammetry and photochronopotentiometry measurements indicate that the reaction proceeds via the underpotential deposition. The ultrathin Cu shell drastically increases the activity of Au/TiO2 for the selective oxidation of amines to the corresponding aldehydes under visible-light irradiation (λ > 430 nm). Photochronoamperometry measurements strongly suggest that the striking Cu shell effect stems from the enhancement of the charge separation in the localized surface plasmon resonance-excited Au/TiO2.

Study of photoirradiation for YBa 2Cu 3O 6+ x compounds and the electron structure by positron experiment

NASA Astrophysics Data System (ADS)

Guosheng, Cheng; Jiaxiang, Shang; Xigui, Li; xianqi, Dai; Xizhong, Wang; Jincang, Zhang

1997-08-01

We present positron lifetime data of YBa 2Cu 3O 6+ x (x=0.92, 0.43) compounds for different photo-irradiation time. It is given that change of the local electron density and vacancy concentration with photoirradiation time. It is found that there is transform at the electronic structure of CuO chains. We also have discussed the effect of photoirradiations time on the electronic structure of YBa 2Cu 3O 6+ x systems and their charge reservoir layer and CuO 2 plane conduction.layer. The positron experimental results support the model of photoinduced oxygen-diffusion mechanism.

X-ray photoemission study of the infinite-layer cuprate superconductor Sr(0.9) La (0.1) CuO(2)

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Jung, C. U.; Kim, J. Y.; Kim, M. S.; Lee, S. Y.; Lee, S. I.

2001-01-01

The electron-doped infinite-layer superconductor Sr(0.9)La(0.1) CuO(2) is studied with x-ray photoemission spectroscopy (XPS). A nonaqueous chemical etchant is shown to effectively remove contaminants and to yield surfaces from which signals intrinsic to the superconductor dominate.

Current Status and Future Prospects of Copper Oxide Heterojunction Solar Cells

PubMed Central

Wong, Terence K. S.; Zhuk, Siarhei; Masudy-Panah, Saeid; Dalapati, Goutam K.

2016-01-01

The current state of thin film heterojunction solar cells based on cuprous oxide (Cu2O), cupric oxide (CuO) and copper (III) oxide (Cu4O3) is reviewed. These p-type semiconducting oxides prepared by Cu oxidation, sputtering or electrochemical deposition are non-toxic, sustainable photovoltaic materials with application potential for solar electricity. However, defects at the copper oxide heterojunction and film quality are still major constraining factors for achieving high power conversion efficiency, η. Amongst the Cu2O heterojunction devices, a maximum η of 6.1% has been obtained by using pulsed laser deposition (PLD) of AlxGa1−xO onto thermal Cu2O doped with Na. The performance of CuO/n-Si heterojunction solar cells formed by magnetron sputtering of CuO is presently limited by both native oxide and Cu rich copper oxide layers at the heterointerface. These interfacial layers can be reduced by using a two-step sputtering process. A high η of 2.88% for CuO heterojunction solar cells has been achieved by incorporation of mixed phase CuO/Cu2O nanopowder. CuO/Cu2O heterojunction solar cells fabricated by electrodeposition and electrochemical doping has a maximum efficiency of 0.64% after surface defect passivation and annealing. Finally, early stage study of Cu4O3/GaN deposited on sapphire substrate has shown a photovoltaic effect and an η of ~10−2%. PMID:28773398

Di-μ-chlorido-bis­[(2-amino­benzamide-κ2 N 2,O)chlorido­copper(II)

PubMed Central

Damous, Maamar; Dénès, George; Bouacida, Sofiane; Hamlaoui, Meriem; Merazig, Hocine; Daran, Jean-Claude

2013-01-01

The title compound, [Cu2Cl4(C7H8N2O)2], crystallizes as discrete [CuLCl2]2 (L = 2-amino­benzamide) dimers with inversion symmetry. Each CuII ion is five-coordinated and is bound to two bridging chloride ligands, a terminal chloride ligand and a bidentate 2-amino­benzamide ligand. The crystal structure exhibits alternating layers parallel to (010) along the b-axis direction. In the crystal, the components are linked via N—H⋯Cl hydrogen bonds, forming a three-dimensional network. These inter­actions link the mol­ecules within the layers and also link the layers together and reinforce the cohesion of the structure. PMID:24426988

Layered magnetic structures: Antiferromagnetic-type interlayer coupling and magnetoresistance due to antiparallel alignment

NASA Astrophysics Data System (ADS)

Grünberg, P.; Demokritov, S.; Fuss, A.; Vohl, M.; Wolf, J. A.

1991-04-01

Layered Fe/Cr structures are known to display antiferromagnetic-type interlayer coupling and a new magnetoresistance (MR) effect due to antiparallel magnetization alignment. The strength of the coupling is found to be similar in multilayered structures and in double layers. The oscillatory behavior of the coupling, previously found by Parkin, More, and Roche [Phys. Rev. Lett. 64, 2304 (1990)] on sputtered polycrystalline samples, is here confirmed for epitaxial samples, obtained by thermal evaporation. The new MR effect is interpreted as due to a spin-dependent scattering of the electrons at the Fe-Cr interfaces. The investigations have been extended to Fe/V, Fe/Mn, Fe/Cu, Co/Au, Co/Cr, and Co/Cu structures where the antiparallel alignment of the ferromagnetic layers is obtained via hysteresis effects. A MR effect due to antiparallel alignment, which is strong for Co/Au and Co/Cu but weak in the other cases, has been found.

STM-induced light emission enhanced by weakly coupled organic ad-layers

NASA Astrophysics Data System (ADS)

Cottin, M. C.; Ekici, E.; Bobisch, C. A.

2018-03-01

We analyze the light emission induced by the tunneling current flowing in a scanning tunneling microscopy experiment. In particular, we study the influence of organic ad-layers on the light emission on the initial monolayer of bismuth (Bi) on Cu(111) in comparison to the well-known case of organic ad-layers on Ag(111). On the Bi/Cu(111)-surface, we find that the scanning tunneling microscopy-induced light emission is considerably enhanced if an organic layer, e.g., the fullerene C60 or the perylene derivate perylene-tetracarboxylic-dianhydride, is introduced into the tip-sample junction. The enhancement can be correlated with a peculiarly weak interaction between the adsorbed molecules and the underlying Bi/Cu(111) substrate as compared to the Ag(111) substrate. This allows us to efficiently enhance and tune the coupling of the tunneling current to localized excitations of the tip-sample junction, which in turn couple to radiative decay channels.