Transport and {Tc} anomalies around x = 0.22 in La{sub 2{minus}x}Sr{sub x}Cu{sub 1{minus}y}M{sub y}O{sub 4} (M = Zn, Ga, Ni): Possibility of charge and/or spin ordering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koike, Y.; Kakinuma, N.; Aoyama, M.

1999-12-01

Transport and {Tc} anomalies around x = 0.22 in La{sub 2{minus}x}Sr{sub x}CuO{sub 4} have been studied through the partial substitution of Zn, Ga and Ni for Cu. It has been found that the value of x where the anomalies occur shifts to lower x values through the Zn substitution, while it shifts to larger x values through the Ga substitution, and it disappears through the Ni substitution. There is a possibility that an order of holes and/or spins, such as the so-called stripe order, is formed or fluctuates around x = 0.22 in La{sub 2{minus}x}Sr{sub x}CuO{sub 4}.

Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

NASA Astrophysics Data System (ADS)

Elsayed, M.; Krause-Rehberg, R.; Korff, B.; Ratschinski, I.; Leipner, H. S.

2013-08-01

Positron annihilation spectroscopy was applied to investigate the nature and thermal behavior of defects induced by Cu diffusion in Zn-doped p-type GaAs crystals. Cu atoms were intentionally introduced in the GaAs lattice through thermally activated diffusion from a thin Cu capping layer at 1100 °C under defined arsenic vapor pressure. During isochronal annealing of the obtained Cu-diffused GaAs in the temperature range of 450-850 K, vacancy clusters were found to form, grow and finally disappear. We found that annealing at 650 K triggers the formation of divacancies, whereas further increasing in the annealing temperature up to 750 K leads to the formation of divacancy-copper complexes. The observations suggest that the formation of these vacancy-like defects in GaAs is related to the out-diffusion of Cu. Two kinds of acceptors are detected with a concentration of about 1016 - 1017 cm-3, negative ions and arsenic vacancy copper complexes. Transmission electron microscopy showed the presence of voids and Cu precipitates which are not observed by positron measurements. The positron binding energy to shallow traps is estimated using the positron trapping model. Coincidence Doppler broadening spectroscopy showed the presence of Cu in the immediate vicinity of the detected vacancies. Theoretical calculations suggested that the detected defect is VGaVAs-2CuGa.

First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S){sub 2} and Cu{sub 2}ZnSn(Se,S){sub 4}-based thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

2016-01-14

We investigate point defects in CdS buffer layers that may arise from intermixing with Cu(In,Ga)Se{sub 2} (CIGSe) or Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) absorber layers in thin-film photovoltaics (PV). Using hybrid functional calculations, we characterize the migration barriers of Cu, In, Ga, Se, Sn, Zn, Na, and K impurities and assess the activation energies necessary for their diffusion into the bulk of the buffer. We find that Cu, In, and Ga are the most mobile defects in CIGS-derived impurities, with diffusion expected to proceed into the buffer via interstitial-hopping and cadmium vacancy-assisted mechanisms at temperatures ∼400 °C. Cu is predicted to stronglymore » favor migration paths within the basal plane of the wurtzite CdS lattice, which may facilitate defect clustering and ultimately the formation of Cu-rich interfacial phases as observed by energy dispersive x-ray spectroscopic elemental maps in real PV devices. Se, Zn, and Sn defects are found to exhibit much larger activation energies and are not expected to diffuse within the CdS bulk at temperatures compatible with typical PV processing temperatures. Lastly, we find that Na interstitials are expected to exhibit slightly lower activation energies than K interstitials despite having a larger migration barrier. Still, we find both alkali species are expected to diffuse via an interstitially mediated mechanism at slightly higher temperatures than enable In, Ga, and Cu diffusion in the bulk. Our results indicate that processing temperatures in excess of ∼400 °C will lead to more interfacial intermixing with CdS buffer layers in CIGSe devices, and less so for CZTSSe absorbers where only Cu is expected to significantly diffuse into the buffer.« less

Zn-site Substitution Effect in YbCo2Zn20

NASA Astrophysics Data System (ADS)

Kobayashi, Riki; Takamura, Haruki; Higa, Yasuyuki; Ikeda, Yoichi; Matsubayashi, Kazuyuki; Uwatoko, Yoshiya; Yoshizawa, Hideki; Aso, Naofumi

2017-04-01

We have investigated the substitution effect of YbCo2(Zn1-xTx)20 (T = Cu, Ga, and Cd) systems by using the experiments of X-ray powder diffraction (XRPD), specific heat, magnetic susceptibility, magnetization, and electrical resistivity in order to find out a material that approaches a quantum critical point by chemical pressure. The XRPD and electrical resistivity measurements clarify that the Cu-substitution makes the lattice constants shrink and keeps the magnetic electrical resistivity high, while the Ga- and the Cd-substitution show opposite relation of the Cu-substitution. However, we could not detect clear substitution effect in the specific heat, magnetic susceptibility, and magnetization measurements of Cu-substitution system within our experiments. It is necessary that to study the Cu-substitution samples that have higher x value at lower temperature.

CdS-Free p-Type Cu2ZnSnSe4/Sputtered n-Type In x Ga1- x N Thin Film Solar Cells

NASA Astrophysics Data System (ADS)

Chen, Wei-Liang; Kuo, Dong-Hau; Tuan, Thi Tran Anh

2017-03-01

Cu2ZnSnSe4 (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu-Zn-Sn metal target, followed by two-step post-selenization at 500-600°C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In0.15Ga0.85N/GaN/CZTSe and In0.15Ga0.85N/In0.3Ga0.7N/CZTSe. The p-type CZTSe and the n-type In x Ga1- x N films were characterized. The properties of CZTSe changed with the selenization temperature and the In x Ga1- x N with its indium content. With the CdS-free modeling for a solar cell structure, the In0.15Ga0.85N/In0.3Ga0.7N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. Current density of ˜48 mA/cm2, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves that sputtered III-nitride films have their merits.

Enhancement of current-perpendicular-to-plane giant magnetoresistance in Heusler-alloy based pseudo spin valves by using a CuZn spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Furubayashi, T., E-mail: furubayashi.takao@nims.go.jp; Takahashi, Y. K.; Sasaki, T. T.

2015-10-28

Enhancement of magnetoresistance output was attained in current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices by using a bcc CuZn alloy for the spacer. Pseudo spin valves that consisted of the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) Heusler alloy for ferromagnetic layers and CuZn alloy with the composition of Cu{sub 52.4}Zn{sub 47.6} for a spacer showed the large change of the resistance-area products, ΔRA, up to 8 mΩ·μm{sup 2} for a low annealing temperature of 350 °C. The ΔRA value is one of the highest reported so far for the CPP-GMR devices for the low annealing temperature, which is essential for processing read heads for hardmore » disk drives. We consider that the enhancement of ΔRA is produced from the spin-dependent resistance at the Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/CuZn interfaces.« less

Enhanced Thermoelectric Properties of Cu 2ZnSnSe 4 with Ga-doping

DOE PAGES

Wei, Kaya; Beauchemin, Laura; Wang, Hsin; ...

2015-08-10

Gallium doped Cu 2ZnSnSe 4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S 2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are partmore » of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

Thin-target excitation functions and optimisation of NCA 64Cu and 66,67Ga production by deuteron induced nuclear reactions on natural zinc target, for radiometabolic therapy and for PET

NASA Astrophysics Data System (ADS)

Groppi, F.; Bonardi, M. L.; Birattari, C.; Gini, L.; Mainardi, C.; Menapace, E.; Abbas, K.; Holzwarth, U.; Stroosnijder, R. M. F.

2004-01-01

A novel method for production of No-Carrier-Added 64Cu and 66,67Ga has been developed, based on reactions induced by deuterons up to 19 MeV on Zn target. HPGe and beta (by LSC) spectrometries proved very effective to determine radionuclidic purity of 64Cu and 66,67Ga fractions. Experimental specific activity for 64Cu was measured by ET-AAS and was of the order of 700 MBq · μg -1. Radiochemical yields for 64Cu and 66,67Ga were >80% and >99%.

Toward blue emission in ZnO based LED

NASA Astrophysics Data System (ADS)

Viana, Bruno; Pauporté, Thierry; Lupan, Oleg; Le Bahers, Tangui; Ciofini, Ilaria

2012-03-01

The bandgap engineering of ZnO nanowires by doping is of great importance for tunable light emitting diode (LED) applications. We present a combined experimental and computational study of ZnO doping with Cd or Cu atoms in the nanomaterial. Zn1-xTMxO (TM=Cu, Cd) nanowires have been epitaxially grown on magnesium-doped p-GaN by electrochemical deposition. The Zn1-xTMxO/p-GaN heterojunction was integrated in a LED structure. Nanowires act as the light emitters and waveguides. At room temperature, TM-doped ZnO based LEDs exhibit low-threshold emission voltage and electroluminescence emission shifted from ultraviolet to violet-blue spectral region compared to pure ZnO LEDs. The emission wavelength can be tuned by changing the transition metal (TM) content in the ZnO nanomaterial and the shift is discussed, including insights from DFT computational investigations.

Alternative buffer layer development in Cu(In,Ga)Se2 thin film solar cells

NASA Astrophysics Data System (ADS)

Xin, Peipei

Cu(In,Ga)Se2-based thin film solar cells are considered to be one of the most promising photovoltaic technologies. Cu(In,Ga)Se2 (CIGS) solar devices have the potential advantage of low-cost, fast fabrication by using semiconductor layers of only a few micrometers thick and high efficiency photovoltaics have been reported at both the cell and the module levels. CdS via chemical bath deposition (CBD) has been the most widely used buffer option to form the critical junction in CIGS-based thin film photovoltaic devices. However, the disadvantages of CdS can’t be ignored - regulations on cadmium usage are getting stricter primarily due to its toxicity and environmental impacts, and the proper handling of the large amount of toxic chemical bath waste is a massive and expensive task. This dissertation is devoted to the development of Cd-free alternative buffer layers in CIGS-based thin film solar cells. Based on the considerations of buffer layer selection criteria and extensive literature review, Zn-compound buffer materials are chosen as the primary investigation candidates. Radio frequency magnetron sputtering is the preferred buffer deposition approach since it’s a clean and more controllable technique compared to CBD, and is readily scaled to large area manufacturing. First, a comprehensive study of the ZnSe1-xOx compound prepared by reactive sputtering was completed. As the oxygen content in the reactive sputtering gas increased, ZnSe1-xOx crystallinity and bandgap decreased. It’s observed that oxygen miscibility in ZnSe was low and a secondary phase formed when the O2 / (O2 + Ar) ratio in the sputtering gas exceeded 2%. Two approaches were proposed to optimize the band alignment between the CIGS and buffer layer. One method focused on the bandgap engineering of the absorber, the other focused on the band structure modification of the buffer. As a result, improved current of the solar cell was achieved although a carrier transport barrier at the junction interface still limited the device performance. Second, an investigation of Zn(S,O) buffer layers was completed. Zn(S,O) films were sputtered in Ar using a ZnO0.7S0.3 compound target. Zn(S,O) films had the composition close to the target with S / (S+O) ratio around 0.3. Zn(S,O) films showed the wurtzite structure with the bandgap about 3.2eV. The champion Cu(In,Ga)Se2 / Zn(S,O) cell had 12.5% efficiency and an (Ag,Cu)(In,Ga)Se2 / Zn(S,O) cell achieved 13.2% efficiency. Detailed device analysis was used to study the Cu(In,Ga)Se2 and (Ag,Cu)(In,Ga)Se2 absorbers, the influence of absorber surface treatments, the effects of device treatments, the sputtering damage and the Na concentration in the absorber. Finally alternative buffer layer development was applied to an innovative superstrate CIGS configuration. The superstrate structure has potential benefits of improved window layer properties, cost reduction, and the possibility to implement back reflector engineering techniques. The application of three buffer layer options - CdS, ZnO and ZnSe was studied and limitations of each were characterized. The best device achieved 8.6% efficiency with a ZnO buffer. GaxOy formation at the junction interface was the main limiting factor of this device performance. For CdS / CIGS and ZnSe / CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth conditions was the critical problem. Inter-diffusion severely deteriorated the junction quality and led to poorly behaved devices, despite different efforts to optimize the fabrication process.

ONR Tokyo Scientific Bulletin. Volume 5, Number 1, January-March 1980,

DTIC Science & Technology

1980-03-01

alloys studied are in die AI-Zn, Al -Mg, Al -Si. Al - Cu . Cu - Al . and Cu -Fe... alloys Digital processing Measuring N 20. Abstract (cont.) with certain reports also being contributed by visiting stateside scientist. Occasionally a...atomic absorption spectrophotometer with tubes for the determination of Zn, Cu , Pb, Cr, Fe, Mg, Mn, Al , Co, Cd, Si, Ti, Zr, Ga, Au, Ag, Ni, Na, and

Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

NASA Astrophysics Data System (ADS)

Garg, Manjari; Naik, Tejas R.; Pathak, C. S.; Nagarajan, S.; Rao, V. Ramgopal; Singh, R.

2018-04-01

III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, we have demonstrated the use of a Self-Assembled Monolayer (SAM) of organic molecules to improve the electrical characteristics of Schottky barrier diodes (SBDs) on n-type Gallium Nitride (n-GaN) epitaxial films. The electrical characteristics of diodes were improved by adsorption of SAM of hydroxyl-phenyl metallated porphyrin organic molecules (Zn-TPPOH) onto the surface of n-GaN. SAM-semiconductor bonding via native oxide on the n-GaN surface was confirmed using X-ray photoelectron spectroscopy measurements. Surface morphology and surface electronic properties were characterized using atomic force microscopy and Kelvin probe force microscopy. Current-voltage characteristics of different metal (Cu, Ni) SBDs on bare n-GaN were compared with those of Cu/Zn-TPPOH/n-GaN and Ni/Zn-TPPOH/n-GaN SBDs. It was found that due to the molecular monolayer, the surface potential of n-GaN was decreased by ˜350 mV. This caused an increase in the Schottky barrier height of Cu and Ni SBDs from 1.13 eV to 1.38 eV and 1.07 eV to 1.22 eV, respectively. In addition to this, the reverse bias leakage current was reduced by 3-4 orders of magnitude for both Cu and Ni SBDs. Such a significant improvement in the electrical performance of the diodes can be very useful for better device functioning.

Bioactive and metal uptake studies of carboxymethyl chitosan-graft-D-glucuronic acid membranes for tissue engineering and environmental applications.

PubMed

Jayakumar, R; Rajkumar, M; Freitas, H; Sudheesh Kumar, P T; Nair, S V; Furuike, T; Tamura, H

2009-08-01

Carboxymethyl chitosan-graft-D-glucuronic acid (CMCS-g-D-GA) was prepared by grafting D-GA onto CMCS in the presence of 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide (EDC) and then the membranes were made from it. In this work, the bioactivity studies of CMCS-g-D-GA membranes were carried out and then characterized by SEM, CLSM, XRD and FT-IR. The CMCS-g-D-GA membranes were found to be bioactive. The adsorption of Ni2+, Zn2+ and Cu2+ ions onto CMCS-g-D-GA membranes has also been investigated. The maximum adsorption capacity of CMCS-g-D-GA for Ni2+, Zn2+ and Cu2+ was found to be 57, 56.4 and 70.2 mg/g, respectively. Hence, these membranes were useful for tissue engineering, environmental and water purification applications.

Proton and deuteron induced reactions on natGa: Experimental and calculated excitation functions

NASA Astrophysics Data System (ADS)

Hermanne, A.; Adam-Rebeles, R.; Tárkányi, F.; Takács, S.; Ditrói, F.

2015-09-01

Cross-sections for reactions on natGa, induced by protons (up to 65 MeV) and deuterons (up to 50 MeV), producing γ-emitting radionuclides with half-lives longer than 1 h were measured in a stacked-foil irradiation using thin Ga-Ni alloy (70-30%) targets electroplated on Cu or Au backings. Excitation functions for generation of 68,69Ge, 66,67,68,72Ga and 65,69mZn on natGa are discussed, relative to the monitor reactions natAl(d,x)24,22Na, natAl(p,x)24,22Na, natCu(p,x)62Zn and natNi(p,x)57Ni. The results are compared to our earlier measurements, the scarce literature values and to the results of the code TALYS 1.6 (online database TENDL-2014).

Electronic structure, defect formation energy, and photovoltaic properties of wurtzite-derived CuGaO2

NASA Astrophysics Data System (ADS)

Okumura, H.; Sato, K.; Kakeshita, T.

2018-04-01

Wurtzite-derived CuGaO2 (β-CuGaO2) is a recently synthesized oxide and expected as a candidate material for photovoltaic solar cells. In this paper, we propose computational material design concerning β-CuGaO2 based on the first-principles calculations. We perform hybrid calculations by using the VASP code. It is predicted that β-CuGaO2 has a direct bandgap (Eg = 1.56 eV), which is nearly optimal for high efficiency solar cells. The calculated formation energy of Cu vacancy (VCu) is very small and can be negative depending on the Fermi level. This result reasonably explains the observed p-type conduction in this material. As for the n-type doping, Cd doping could be suitable; however, VCu formation needs to be repressed in order to realize n-type β-CuGaO2. It is also shown that halogen impurities are not suitable for n-type β-CuGaO2 because of their large formation energy. Band alignment between β-CuGaO2 and ZnO is predicted to be type-II, leading to a suggestion of photovoltaic device based on the heterojunction.

ZnCuInS/ZnSe/ZnS quantum dot-based downconversion light-emitting diodes and their thermal effect

DOE PAGES

Liu, Wenyan; Zhang, Yu; Wang, Dan; ...

2015-08-13

The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half-maximum (FWHM) and power efficiencies (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed littlemore » due to the low emission temperature coefficients of 0.022, 0.050 and 0.068 nm/°C for red-, yellow- and green-emitting ZnCuInS/ZnSe/ZnS QDs. Lastly this indicates that ZnCuInS/ZnSe/ZnS QDs are more suitable for down-conversion LEDs compared to CdSe QDs.« less

Chemical bath deposited ZnS buffer layer for Cu(In,Ga)Se2 thin film solar cell

NASA Astrophysics Data System (ADS)

Hong, Jiyeon; Lim, Donghwan; Eo, Young-Joo; Choi, Changhwan

2018-02-01

The dependence of Zn precursors using zinc sulfate (ZnSO4), zinc acetate (Zn(CH3COO)2), and zinc chloride (ZnCl2) on the characteristics of the chemical bath deposited ZnS thin film used as a buffer layer of Cu(In,Ga)Se2 (CIGS) thin film solar cell was studied. It is found that the ZnS film deposition rate increases with higher stability constant during decomplexation reaction of zinc ligands, which affects the crack formation and the amount of sulfur and oxygen contents within the film. The band gap energies of all deposited films are in the range of 3.40-3.49 eV, which is lower than that of the bulk ZnS film due to oxygen contents within the films. Among the CIGS solar cells having ZnS buffer layers prepared by different Zn precursors, the best cell efficiency with 9.4% was attained using Zn(CH3COO)2 precursor due to increased Voc mainly. This result suggests that [Zn(NH3)4]2+ complex formation should be well controlled to attain the high quality ZnS thin films.

Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

DOE PAGES

Rajbhandari, Pravakar P.; Bikowski, Andre; Perkins, John D.; ...

2016-09-20

In this study, the development of tunable contact materials based on environmentally friendly chemical elements using scalable deposition approaches is necessary for existing and emerging solar energy conversion technologies. In this paper, the properties of ZnO alloyed with magnesium (Mg), and doped with gallium (Ga) are studied using combinatorial thin film experiments. As a result of these studies, the optical band gap of the sputtered Zn 1-xMg xO thin films was determined to vary from 3.3 to 3.6 eV for a compositional spread of Mg content in the 0.04 < x < 0.17 range. Depending on whether or not Gamore » dopants were added, the electron concentrations were on the order of 10 17 cm -3 or 10 20 cm -3, respectively. Based on these results and on the Kelvin Probe work function measurements, a band diagram was derived using basic semiconductor physics equations. The quantitative determination of how the energy levels of Ga-doped (Zn, Mg)O thin films change as a function of Mg composition presented here, will facilitate their use as optimized contact layers for both Cu 2ZnSnS 4 (CZTS), Cu(In, Ga)Se 2 (CIGS) and other solar cell absorbers.« less

Photoluminescence and photocatalytic properties of rhombohedral CuGaO2 nanoplates

PubMed Central

Shi, Linlin; Wang, Fei; Wang, Yunpeng; Wang, Dengkui; Zhao, Bin; Zhang, Ligong; Zhao, Dongxu; Shen, Dezhen

2016-01-01

Rhombohedral phase CuGaO2 nanoplates with a diameter of about 10 μm were synthesized via low temperature hydrothermal method. Room temperature and low temperature photoluminescence of the obtained CuGaO2 nanoplates were characterized. CuGaO2 nanoplates exhibited blue emission at room temperature and free exciton emission were appeared at low temperature. The blue emission is originated from defects such as Cu vacancies, which is the possible origin of p-type conductivity. The appearance of free exciton emission can demonstrate the direct bandgap transition behavior of CuGaO2 nanoplates. The as-prepared p-type CuGaO2 nanoplates were further decorated by n-type ZnO nanoparticles via calcination method to fabricate p-n junction nanocomposites. The nanocomposites exhibited enhanced photocatalytic activity which can be ascribed to the effective separation of photogenerated carriers by the internal electrostatic field in the p-n junction region, and the enhanced light absorption properties resulted from sub-bandgap absorption effect of p-n junction. This work has offered a new insight into the design of p-n junction devices using p-type CuGaO2 nanoplates. PMID:26887923

White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Kim, Jong-Hoon; Yang, Heesun

2014-06-01

Two types of non-Cd quantum dots (QDs)—In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu-In-Ga-S (CIGS) alloy ones, and red-emitting InP ones—are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI1-xGxS/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI0.2G0.8S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI0.2G0.8S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution.

White lighting device from composite films embedded with hydrophilic Cu(In, Ga)S2/ZnS and hydrophobic InP/ZnS quantum dots.

PubMed

Kim, Jong-Hoon; Yang, Heesun

2014-06-06

Two types of non-Cd quantum dots (QDs)-In/Ga ratio-varied, green-to-greenish-yellow fluorescence-tuned Cu-In-Ga-S (CIGS) alloy ones, and red-emitting InP ones-are synthesized for use as down-converters in conjunction with a blue light-emitting diode (LED). Among a series of Ga-rich CI1-xGxS/ZnS core/shell QDs (x = 0.7, 0.8, and 0.9), CI0.2G0.8S/ZnS QD is chosen for the hydrophobic-to-hydrophilic surface modification via an in-situ ligand exchange and then embedded in a water-soluble polyvinyl alcohol (PVA). This free-standing composite film is utilized as a down-converter for the fabrication of a remote-type white QD-LED, but the resulting bi-colored device exhibits a cool white light with a limited color rendering index property. To improve white light qualities, another QD-polymer film of hydrophobic red InP/ZnS QD-embedding polyvinylpyrrolidone is sequentially stacked onto the CI0.2G0.8S/ZnS QD-PVA film, producing a unique dual color-emitting, flexible and transparent bilayered composite film. Tri-colored white QD-LED integrated with the bilayered QD film possesses an exceptional color rendering property through reinforcing a red spectral component and balancing a white spectral distribution.

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing.

PubMed

Wi, Jae-Hyung; Kim, Tae Gun; Kim, Jeong Won; Lee, Woo-Jung; Cho, Dae-Hyung; Han, Won Seok; Chung, Yong-Duck

2015-08-12

We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

Cu(In,Ga)Se2 Solar Cells with Amorphous In2O3-Based Front Contact Layers.

PubMed

Koida, Takashi; Ueno, Yuko; Nishinaga, Jiro; Higuchi, Hirohumi; Takahashi, Hideki; Iioka, Masayuki; Shibata, Hajime; Niki, Shigeru

2017-09-06

Amorphous (a-) In 2 O 3 -based front contact layers composed of transparent conducting oxide (TCO) and transparent oxide semiconductor (TOS) layers were proved to be effective in enhancing the short-circuit current density (J sc ) of Cu(In,Ga)Se 2 (CIGS) solar cells with a glass/Mo/CIGS/CdS/TOS/TCO structure, while maintaining high fill factor (FF) and open-circuit voltage (V oc ). An n-type a-In-Ga-Zn-O layer was introduced between the CdS and TCO layers. Unlike unintentionally doped ZnO broadly used as TOS layers in CIGS solar cells, the grain-boundary(GB)-free amorphous structure of the a-In-Ga-Zn-O layers allowed high electron mobility with superior control over the carrier density (N). High FF and V oc values were achieved in solar cells containing a-In-Ga-Zn-O layers with N values broadly ranging from 2 × 10 15 to 3 × 10 18 cm -3 . The decrease in FF and V oc produced by the electronic inhomogeneity of solar cells was mitigated by controlling the series resistance within the TOS layer of CIGS solar cells. In addition, a-In 2 O 3 :H and a-In-Zn-O layers exhibited higher electron mobilities than the ZnO:Al layers conventionally used as TCO layers in CIGS solar cells. The In 2 O 3 -based layers exhibited lower free carrier absorption while maintaining similar sheet resistance than ZnO:Al. The TCO and TOS materials and their combinations did not significantly change the V oc of the CIGS solar cells and the mini-modules.

Evidences for Cu and Zn Isotope Fractionation in Sediments and Particulate Suspended Matter of the Scheldt Estuary

NASA Astrophysics Data System (ADS)

Petit, J.; Mattielli, N.; de Jong, J.; Chou, L.

2004-05-01

Recent developments in MC-ICP-MS technology allow high precision measurements of heavy stable isotopes, such as Cu and Zn isotopes, which have been shown to undergo biotic or abiotic fractionation (1). Application of Zn isotopes to the study of aquatic ecosystems has already shown some interesting perspectives in their potential use as biogeochemical tracers in deep ocean carbonates (2) or Fe-Mn nodules (3). However, until now no investigation of possible Cu and Zn isotopic fractionation has been carried out within estuaries that are important pathways for hydrological and geochemical cycling of metals. Cu and Zn isotope geochemistry has been studied in sandy to loamy surface sediments (top 20 cm) and in suspended particulate matter (SPM) along a transect in a strong tidal estuary, the Scheldt estuary situated in Belgium and the Netherlands (November 2002). Further to separation of Cu, Fe and Zn by one step ion-exchange chromatography, Cu and Zn isotopic ratios are measured with a "Nu-Plasma" MC-ICP-MS. Instrumental mass bias is corrected using reference materials (Zn JMC, Cu NIST SRM 976 and Ga JMC standard) by simultaneous standard-sample bracketing and external normalization (500 ppb Zn doping for Cu isotopic analyses in static mode and 250 ppb Ga doping for Zn isotopic analyses in dynamic mode), together with a Ni correction. These methods lead to long-term reproducibility (2σ at 95 % confidence level) of ± 0.07 per mil for δ 66Zn (n=100 over 7 analysis sessions) and ± 0.06 per mil for δ 65Cu (n=120 over 8 analysis sessions) for 500 ppb of reference material. Average beam intensities are 6 V/ppm. Precise and reproducible results are obtained for concentration as low as 100 ppb for Cu and Zn. Expected Cu and Zn enrichment in SPM (120 ppm and 1200 ppm respectively) and sediments (being 6 to 10 times lower than SPM) in the upper estuary and progressive decrease in metal content by mixing downstream of the maximum turbidity zone (MTZ, around 5 psu) are observed. Results show that variations in Cu and Zn isotopic composition are smaller in SPM (δ 66Zn varying from 0.35 to 0.17 and δ 65Cu from -0.13 to 0.18) than in sediments. Cu and Zn isotopic signatures of sediments show a clear trend of lighter isotopes removal from the MTZ seaward with δ 66Zn varying from 0.21 at 2 psu to 1.11 per mil at 33 psu (and δ 65Cu = -0.37 to 0.24). In contrast, Zn isotopic compositions in SPM are more homogeneous with average δ 66Zn of 0.24 ± 0.18 over all the transect. Cu isotopic composition in SPM are very constant downstream of the MTZ with average δ 65Cu =-0.06 ± 0.08 but become more scattered within MTZ (varying from -0.04 to 0.18). These preliminary results pinpoint important variations in Cu and Zn isotopic compositions within estuarine systems and contrasted isotopic signatures in Cu and Zn between SPM and sediments. Results suggest the important role of early diagenesis in the isotope geochemistry of heavy metals in estuarine environment. This study provides a stepping stone for further investigation of interacting processes involved in controlling the cycling of metals in the Scheldt estuary. (1) Zhu et al., Earth Planet. Sci. Lett. 200 (2002), 47-62 (2) Pichat et al., Earth Planet. Sci. Lett. 6598 (2003), 1-12 (3) Maréchal et al., Geochem. Geophys. Geosyt., 1 (2000), GC000029

Icosahedral quasicrystals as twins of cubic crystals containing large icosahedral clusters of atoms: The 1012-atom primitive cubic structure of Al(6)CuLi(3), the C-phase Al(37)Cu(3)Li(21)Mg(3), and GaMg(2)Zn(3).

PubMed

Pauling, L

1988-06-01

Single-grain precession x-ray diffraction photographs of Al(6)CuLi(3) have been successfully indexed on the basis of icosahedral twinning of cubic crystals with a 1012-atom primitive cubic unit with edge 25.70 A, giving support to the proposal that the so-called icosahedral quasicrystals are twins of crystals containing eight large icosahedral clusters in the beta-W arrangement. In this compound two of the clusters consist of 104 atoms and six consist of 136 atoms, with 24 atoms shared. The same structure is assigned to the C-phase, Al(37)Cu(3)Li(21)Mg(3), and to GaMg(2)Zn(3). A theory of icosahedral quasicrystals and amorphous metals is described.

Icosahedral quasicrystals as twins of cubic crystals containing large icosahedral clusters of atoms: The 1012-atom primitive cubic structure of Al6CuLi3, the C-phase Al37Cu3Li21Mg3, and GaMg2Zn3

PubMed Central

Pauling, Linus

1988-01-01

Single-grain precession x-ray diffraction photographs of Al6CuLi3 have been successfully indexed on the basis of icosahedral twinning of cubic crystals with a 1012-atom primitive cubic unit with edge 25.70 Å, giving support to the proposal that the so-called icosahedral quasicrystals are twins of crystals containing eight large icosahedral clusters in the β-W arrangement. In this compound two of the clusters consist of 104 atoms and six consist of 136 atoms, with 24 atoms shared. The same structure is assigned to the C-phase, Al37Cu3Li21Mg3, and to GaMg2Zn3. A theory of icosahedral quasicrystals and amorphous metals is described. PMID:16593929

The influence of doping element on structural and luminescent characteristics of ZnS thin films

NASA Astrophysics Data System (ADS)

Kryshtab, T.; Khomchenko, V. S.; Andraca-Adame, J. A.; Rodionov, V. E.; Khachatryan, V. B.; Tzyrkunov, Yu. A.

2006-10-01

For the fabrication of green and blue emitting ZnS structures the elements of I, III, and VII groups (Cu, Al, Ga, Cl) are used as dopants. The influence of type of impurity, doping technique, and type of substrate on crystalline structure and surface morphology together with luminescent properties was investigated. The doping of thin films was realized during the growth process and/or post-deposition thermal treatment. ZnS thin films were deposited by physical (EBE) and chemical (MOCVD) methods onto glass or ceramic (BaTiO 3) substrates. Closed spaced evaporation and thermodiffusion methods were used for the post-deposition doping of ZnS films. X-ray diffraction (XRD) techniques, atomic force microscopy (AFM), and measurements of photoluminescent (PL) spectra were used for the investigations. It was shown that the doping by the elements of I (Cu) and III (Al, Ga) groups does not change the crystal structure during the thermal treatment up to 1000 ∘C, whereas simultaneous use of the elements of I (Cu) and VII (Cl) groups leads to decrease of the phase transition temperature to 800 ∘C. The presence of impurities in the growth process leads to a grain size increase. At post-deposition treatment Ga and Cl act as activators of recrystallization process. The transition of ZnS sphalerite lattice to wurtzite one leads to the displacement of the blue emission band position towards the short-wavelength range by 10 nm.

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

2013-03-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Magmatism and polymetallic mineralization in southwestern Qinzhou-Hangzhou metallogenic belt, South China

NASA Astrophysics Data System (ADS)

Huang, Xudong; Lu, Jianjun; Wang, Rucheng; Ma, Dongsheng

2016-04-01

As Neoproterozoic suture zone between the Yangtze Block and Cathaysia Block, Qinzhou-Hangzhou metallogenic belt is one of the 21 key metallogenic belts in China. Intensive multiple-aged felsic magmatism and related polymetallic mineralization take place in this belt. Although Neoproterozoic, Paleozoic, Triassic granites and associated deposits have been found in southwestern Qinzhou-Hangzhou metallogenic belt, Middle-Late Jurassic (150-165 Ma) magmatism and related mineralization is of the most importance. Three major kinds of Middle-Late Jurassic granitoids have been distinguished. (Cu)-Pb-Zn-bearing granitoids are slightly differentiated, calc-alkaline and metaluminous dioritic to granodioritic rocks. Sn-(W)-bearing granites contain dark microgranular enclaves and have high contents of REE and HFSE, suggesting affinities of aluminous A-type (A2) granites. W-bearing granites are highly differentiated and peraluminous rocks. (Cu)-Pb-Zn-bearing granitoids have ɛNd(t) values of -11 ˜ -4 and ɛHf(t) values of -12 ˜ -7, corresponding to TDMC(Nd) from 1.4 to 1.8 Ga and TDMC(Hf) from 1.6 to 2.0 Ga, respectively. The ɛNd(t) values of W-bearing granites vary from -11 to -8 with TDMC(Nd) of 1.6 ˜ 1.9 Ga and ɛHf(t) values change from -16 to -7 with TDMC(Hf) of 1.5 ˜ 2.0 Ga. Compared with (Cu)-Pb-Zn-bearing granitoids and W-bearing granites, the Sn-(W)-bearing granites have higher ɛNd(t) (-8 ˜ -2) and ɛHf(t) (-8 ˜ -2) values and younger TDMC(Nd) (1.1 ˜ 1.6 Ga) and TDMC(Hf) (1.2 ˜ 1.8 Ga) values, showing a more juvenile isotopic character. Sn-(W)-bearing granites originate from partial melting of granulitized lower crust involved with some mantle-derived materials. W-bearing granites are derived from partial melting of crust. (Cu)-Pb-Zn-bearing granitoids are also derived from crust but may be influenced by more mantle-derived materials. For (Cu)-Pb-Zn deposits, skarn and carbonate replacement are the most important mineralization types. Cu ore bodies mainly distribute proximally to the plutons and Pb-Zn ore bodies occur as distal parts. Skarn, greisen and quartz vein are the dominant types for Sn-W mineralization. For Sn mineralization, chloritized granite type is also important. Greisen type and chloritized granite type occur in granites, skarn in contact zone between granites and wall rocks and quartz vein in wall rocks. Studies on spatial distribution of ore bodies, metallogenic chronology and as well S-Pb-H-O isotopic characteristics indicate these mineral deposits are genetically related Middle-Late Jurassic magmatic-hydrothermal systems. Mineralogical studies show that apatite can provide useful information for petrogenesis and relationship between various kinds of metal mineralization and specific types of granites. Mineralogical features of magnetite, titanite, biotite and wolframite in granites show that these minerals may be used as indicators discriminating the rare metal mineralization potential of granites.

Generalized stacking fault energies of alloys.

PubMed

Li, Wei; Lu, Song; Hu, Qing-Miao; Kwon, Se Kyun; Johansson, Börje; Vitos, Levente

2014-07-02

The generalized stacking fault energy (γ surface) provides fundamental physics for understanding the plastic deformation mechanisms. Using the ab initio exact muffin-tin orbitals method in combination with the coherent potential approximation, we calculate the γ surface for the disordered Cu-Al, Cu-Zn, Cu-Ga, Cu-Ni, Pd-Ag and Pd-Au alloys. Studying the effect of segregation of the solute to the stacking fault planes shows that only the local chemical composition affects the γ surface. The calculated alloying trends are discussed using the electronic band structure of the base and distorted alloys.Based on our γ surface results, we demonstrate that the previous revealed 'universal scaling law' between the intrinsic energy barriers (IEBs) is well obeyed in random solid solutions. This greatly simplifies the calculations of the twinning measure parameters or the critical twinning stress. Adopting two twinnability measure parameters derived from the IEBs, we find that in binary Cu alloys, Al, Zn and Ga increase the twinnability, while Ni decreases it. Aluminum and gallium yield similar effects on the twinnability.

Nuclear Data Sheets for A=62

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nichols A. L.; Tuli J.; Nichols,A.L.

Experimental nuclear spectroscopic data for known nuclides of mass number 62 (Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge) have been evaluated and presented together with adopted properties of levels and {gamma} rays. New high-spin data are available for {sup 62}Ga, and {sup 62}Zn. Results of in-beam {gamma}-ray studies for {sup 62}Cu producing high-spin states are in conflict in terms of gamma-ray placements and branching ratios. In the opinion of the evaluators, a detailed study of high-spin structures in {sup 62}Cu is needed to obtain a consistent and confident level scheme. Precise studies of superallowed {beta} decaymore » of {sup 62}Ga to {sup 62}Zn by several groups have extended the decay scheme. No significant new data, since the 2000 NDS for A = 62 (2000Hu18), have been reported for {sup 62}Co, {sup 62}Ni and {sup 62}Cu. No data are yet available for excited states in {sup 62}Ti and {sup 62}V, and those for {sup 62}Cr and {sup 62}Ge are scarce. The level lifetime data are available in very few cases. The radioactive decay schemes of {sup 62}Ti and {sup 62}Ge are unknown, and those for {sup 62}V, {sup 62}Cr and 92-ms {sup 62}Mn are scantily known. The data presented here supersede those in the earlier NDS publications.« less

Impact of the deposition conditions of buffer and windows layers on lowering the metastability effects in Cu(In,Ga)Se2/Zn(S,O)-based solar cell

NASA Astrophysics Data System (ADS)

Naghavi, Negar; Hildebrandt, Thibaud; Bouttemy, Muriel; Etcheberry, Arnaud; Lincot, Daniel

2016-02-01

The highest and most reproducible (Cu(In,Ga)Se2 (CIGSe) based solar-cell efficiencies are obtained by use of a very thin n-type CdS layer deposited by chemical bath deposition (CBD). However because of both Cadmium's adverse environmental impact and the narrow bandgap of CdS (2.4-2.5 eV) one of the major objectives in the field of CIGSe technology remains the development and implementation in the production line of Cd-free buffer layers. The CBDZn( S,O) remains one the most studied buffer layer for replacing the CdS in Cu(In,Ga)Se2-based solar cells and has already demonstrated its potential to lead to high-efficiency solar cells up to 22.3%. However one of the key issue to implement a CBD-Zn(S,O) process in a CIGSe production line is the cells stability, which depends both on the deposition conditions of CBD-Zn(S,O) and on a good band alignment between CIGSe/Zn(S,O)/windows layers. The most common window layers applied in CIGSe solar cells consist of two layers : a thin (50-100 nm) and highly resistive i-ZnO layer deposited by magnetron sputtering and a transparent conducting 300-500 nm ZnO:Al layer. In the case of CBD-Zn(S,O) buffer layer, the nature and deposition conditions of both Zn(S,O) and the undoped window layer can strongly influence the performance and stability of cells. The present contribution will be specially focused on the effect of condition growth of CBD-Zn(S,O) buffer layers and the impact of the composition and deposition conditions of the undoped window layers such as ZnxMgyO or ZnxSnyO on the stability and performance of these solar cells.

Point defects in Cu 2 ZnSnSe 4 (CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition: Point defects in Cu 2 ZnSnSe 4 (CZTSe)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schelhas, L. T.; Stone, K. H.; Harvey, S. P.

The interest in Cu2ZnSn(S,Se)4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a Voc deficit, where the Voc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. To directly determine the level of Cu/Zn ordering, wemore » have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. To understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.« less

Reduced Cu(InGa)Se 2 Thickness in Solar Cells Using a Superstrate Configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shafarman, William N.

This project by the Institute of Energy Conversion (IEC) and the Department of Electrical and Computer Engineering at the University of Delaware sought to develop the technology and underlying science to enable reduced cost of Cu(InGa)Se 2 manufacturing by reducing the thickness of the Cu(InGa)Se 2 absorber layer by half compared to typical production. The approach to achieve this was to use the superstrate cell configuration in which light is incident on the cell through the glass. This structure facilitates optical enhancement approaches needed to achieve high efficiency with Cu(InGa)Se 2 thicknesses less than 1 µm. The primary objective wasmore » to demonstrate a Cu(InGa)Se 2 cell with absorber thickness 0.5 - 0.7 µm and 17% efficiency, along with a quantitative loss analysis to define a pathway to 20% efficiency. Additional objectives were the development of stable TCO and buffer layers or contact layers to withstand the Cu(InGa)Se 2 deposition temperature and of advanced optical enhancement methods. The underlying fundamental science needed to effectively transition these outcomes to large scale was addressed by extensive materials and device characterization and by development of comprehensive optical models. Two different superstrate configurations have been investigated. A frontwall cell is illuminated through the glass to the primary front junction of the device. This configuration has been used for previous efforts on superstrate Cu(InGa)Se 2 but performance has been limited by interdiffusion or reaction with CdS or other buffer layers. In this project, several approaches to overcome these limitations were explored using CdS, ZnO and ZnSe buffer layers. In each case, mechanisms that limit device performance were identified using detailed characterization of the materials and junctions. Due to the junction formation difficulties, efforts were concentrated on a new backwall configuration in which light is incident through the substrate into the back of the absorber layer. The primary junction is then formed after Cu(InGa)Se 2 deposition. This allows the potential benefits of superstrate cells for optical enhancement while maintaining processing advantages of the substrate configuration and avoiding the harmful effects of high temperature deposition on p-n junction formation. Backwall devices have outperformed substrate cells at absorber thicknesses of 0.1-0.5 µm through enhanced JSC due to easy incorporation of a Ag reflector and, with light incident on the absorber, the elimination of parasitic absorption in the CdS buffer. An efficiency of 9.7% has been achieved for a backwall Cu(InGa)Se 2 device with absorber thickness ~0.4 μm. A critical achievement that enabled implementation of the backwall cell was the development of a transparent back contact using MoO 3 or WO 3. Processes for controlled deposition of each material by reactive rf sputtering from metal targets were developed. These contacts have wide bandgaps making them well-suited for application as contacts for backwall devices as well as potential use in bifacial cells and as the top cell of tandem CuInSe 2-based devices. Optical enhancement will be critical for further improvements. Wet chemical texturing of ZnO films has been developed for a simple, low cost light-trapping scheme for backwall superstrate devices to enhance long wavelength quantum efficiency. An aqueous oxalic acid etch was developed and found to strongly texture sputtered ZnO with high haze ≈ 0.9 observed across the whole spectrum. And finally, advanced optical models have been developed to assist the characterization and optimization of Cu(InGa)Se 2 cells with thin absorbers« less

Point defects in Cu 2ZnSnSe 4(CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition

DOE PAGES

Schelhas, L. T.; Stone, K. H.; Harvey, S. P.; ...

2017-07-25

We report that the interest in Cu 2ZnSn(S,Se) 4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se 2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a V oc deficit, where the V oc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. Tomore » directly determine the level of Cu/Zn ordering, we have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. Finally, to understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.« less

Dual emissive manganese and copper Co-doped Zn-In-S quantum dots as a single color-converter for high color rendering white-light-emitting diodes.

PubMed

Yuan, Xi; Ma, Ruixin; Zhang, Wenjin; Hua, Jie; Meng, Xiangdong; Zhong, Xinhua; Zhang, Jiahua; Zhao, Jialong; Li, Haibo

2015-04-29

Novel white light emitting diodes (LEDs) with environmentally friendly dual emissive quantum dots (QDs) as single color-converters are one of the most promising high-quality solid-state lighting sources for meeting the growing global demand for resource sustainability. A facile method was developed for the synthesis of the bright green-red-emitting Mn and Cu codoped Zn-In-S QDs with an absorption bangdgap of 2.56 eV (485 nm), a large Stokes shift of 150 nm, and high emission quantum yield up to 75%, which were suitable for warm white LEDs based on blue GaN chips. The wide photoluminescence (PL) spectra composed of Cu-related green and Mn-related red emissions in the codoped QDs could be controlled by varying the doping concentrations of Mn and Cu ions. The energy transfer processes in Mn and Cu codoped QDs were proposed on the basis of the changes in PL intensity and lifetime measured by means of steady-state and time-resolved PL spectra. By integrating these bicolor QDs with commercial GaN-based blue LEDs, the as-fabricated tricolor white LEDs showed bright natural white light with a color rendering index of 95, luminous efficacy of 73.2 lm/W, and color temperature of 5092 K. These results indicated that (Mn,Cu):Zn-In-S/ZnS QDs could be used as a single color-converting material for the next generation of solid-state lighting.

Volatility in the lunar crust: Trace element analyses of lunar minerals by PIXE proton microprobe

NASA Technical Reports Server (NTRS)

Norman, M. D.; Griffin, W. L.; Ryan, C. G.

1993-01-01

In situ determination of mineral compositions using microbeam techniques can characterize magma compositions through mineral-melt partitioning, and be used to investigate fine-grained or rare phases which cannot be extracted for analysis. Abundances of Fe, Mn, Sr, Ga, Zr, Y, Nb, Zn, Cu, Ni, Se, and Sb were determined for various mineral phases in a small number of lunar highlands rocks using the PIXE proton microprobe. Sr/Ga ratios of plagioclase and Mn/Zn ratios of mafic silicates show that the ferroan anorthosites and Mg-suite cumulates are depleted in volatile lithophile elements to about the same degree compared with chondrites and the Earth. This links the entire lunar crust to common processes or source compositions. In contrast, secondary sulfides in Descartes breccia clasts are enriched in chalcophile elements such as Cu, Zn, Ni, Se, and Sb, and represent a potential resource in the lunar highlands.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schelhas, L. T.; Stone, K. H.; Harvey, S. P.

We report that the interest in Cu 2ZnSn(S,Se) 4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se 2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a V oc deficit, where the V oc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. Tomore » directly determine the level of Cu/Zn ordering, we have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. Finally, to understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.« less

Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells

NASA Astrophysics Data System (ADS)

Cheng, Ke; Han, Kaikai; Kuang, Zhongcheng; Jin, Ranran; Hu, Junxia; Guo, Longfei; Liu, Ya; Lu, Zhangbo; Du, Zuliang

2017-04-01

In this work, CuInGa alloy precursor films are fabricated by co-sputtering of CuIn and CuGa targets simultaneously. After selenization in a tube-type rapid thermal annealing system under a Se atmosphere, the Cu(In, Ga)Se2 (CIGS) absorber layers are obtained. Standard soda lime glass (SLG)/Mo/CIGS/CdS/i-ZnO/ITO/Ag grid structural solar cells are fabricated based on the selenized CIGS absorbers. The influences of selenization temperatures on the composition, crystallinity, and device performances are systematically investigated by x-ray energy dispersive spectroscopy, x-ray diffraction, Raman spectroscopy, and the current density-voltage ( J- V) measurement. It is found that the elemental ratio of Cu/(In + Ga) strongly depends on the selenization temperatures. Because of the appropriate elemental ratio, a 9.92% conversion efficiency is reached for the CIGS absorber selenized at 560°C. After the additional optimization by pre-annealing treatment at 280°C before the selenization, a highest conversion efficiency of 11.19% with a open-circuit ( V oc) of 456 mV, a short-circuit ( J sc) of 40.357 mA/cm2 and a fill factor of 60.82% without antireflection coating has been achieved. Above 13% efficiency improvement was achievable. Our experimental findings presented in this work demonstrate that the post-selenization of co-sputtered CuIn and CuGa precursor is a promising way to fabricate high quality CIGS absorbers.

Pulse electro-deposition of copper on molybdenum for Cu(In,Ga)Se2 and Cu2ZnSnSe4 solar cell applications

NASA Astrophysics Data System (ADS)

Bi, Jinlian; Yao, Liyong; Ao, Jianping; Gao, Shoushuai; Sun, Guozhong; He, Qing; Zhou, Zhiqiang; Sun, Yun; Zhang, Yi

2016-09-01

The issues of rough surface morphology and the incorporated additives of the electro-deposited Cu layers, which exists in electrodeposition-based processes, is one of the major obstacles to improve the efficiency of Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) solar cells. In this study, the pulse current electro-deposition method is employed to deposit smooth Cu film on Mo substrate in CuSO4 solution without any additives. Grain size of the deposited Cu film is decreased by high cathode polarization successfully. And the concentration polarization, which results from high pulse current density, is controlled successfully by adjusting the pulse frequency. Flat Cu film with smooth surface and compact structure is deposited as pulse current density @ 62.5 mA cm-2, pulse frequency @100,000 Hz, and duty cycle @ 25%. CIGSe and CZTSe absorber films with flat surface and uniform elemental distribution are prepared by selenizing the stacking metal layers electro-deposited by pulse current method. Finally, the CIGSe and CZTSe solar cells with conversion efficiency of 10.39% and 7.83% respectively are fabricated based on the smooth Cu films, which are better than the solar cells fabricated by the rough Cu film deposited by direct current electro-deposition method.

Production of ⁶¹Cu by the natZn(p,α) reaction: Improved separation and specific activity determination by titration with three chelators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asad, Ali H.; Smith, Suzanne V.; Morandeau, Laurence M.

In this study, the cyclotron-based production of position-emitting ⁶¹Cu using the (p,α) reaction at 11.7 MeV was investigated starting from natural-zinc ( natZn) and enriched ⁶⁴Zn-foil targets, as well as its subsequent purification. For natZn, a combination of three resins were assessed to separate ⁶¹Cu from contaminating 66,67,68Ga and natZn. The specific activity of the purified ⁶¹Cu determined using ICP-MS analysis ranged from 143.3±14.3(SD) to 506.2±50.6 MBq/μg while the titration method using p-SCN-Bn-DOTA, p-SCN-Bn-NOTA and diamsar gave variable results (4.7±0.2 to 412.5±15.3 MBq/μg), with diamsar lying closest to the ICP-MS values. Results suggest that the p-SCN-Bn-DOTA and p-SCN-Bn-NOTA titration methodsmore » are significantly affected by the presence of trace-metal contaminants.« less

Production of ⁶¹Cu by the natZn(p,α) reaction: Improved separation and specific activity determination by titration with three chelators

DOE PAGES

Asad, Ali H.; Smith, Suzanne V.; Morandeau, Laurence M.; ...

2015-09-01

In this study, the cyclotron-based production of position-emitting ⁶¹Cu using the (p,α) reaction at 11.7 MeV was investigated starting from natural-zinc ( natZn) and enriched ⁶⁴Zn-foil targets, as well as its subsequent purification. For natZn, a combination of three resins were assessed to separate ⁶¹Cu from contaminating 66,67,68Ga and natZn. The specific activity of the purified ⁶¹Cu determined using ICP-MS analysis ranged from 143.3±14.3(SD) to 506.2±50.6 MBq/μg while the titration method using p-SCN-Bn-DOTA, p-SCN-Bn-NOTA and diamsar gave variable results (4.7±0.2 to 412.5±15.3 MBq/μg), with diamsar lying closest to the ICP-MS values. Results suggest that the p-SCN-Bn-DOTA and p-SCN-Bn-NOTA titration methodsmore » are significantly affected by the presence of trace-metal contaminants.« less

Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell

PubMed Central

Tsin, Fabien; Venerosy, Amélie; Vidal, Julien; Collin, Stéphane; Clatot, Johnny; Lombez, Laurent; Paire, Myriam; Borensztajn, Stephan; Broussillou, Cédric; Grand, Pierre Philippe; Jaime, Salvador; Lincot, Daniel; Rousset, Jean

2015-01-01

This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>1020 cm−3) and mobilities (up to 20 cm2 V−1 s−1) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell. PMID:25753657

Electrodeposition of ZnO window layer for an all-atmospheric fabrication process of chalcogenide solar cell.

PubMed

Tsin, Fabien; Venerosy, Amélie; Vidal, Julien; Collin, Stéphane; Clatot, Johnny; Lombez, Laurent; Paire, Myriam; Borensztajn, Stephan; Broussillou, Cédric; Grand, Pierre Philippe; Jaime, Salvador; Lincot, Daniel; Rousset, Jean

2015-03-10

This paper presents the low cost electrodeposition of a transparent and conductive chlorine doped ZnO layer with performances comparable to that produced by standard vacuum processes. First, an in-depth study of the defect physics by ab-initio calculation shows that chlorine is one of the best candidates to dope the ZnO. This result is experimentally confirmed by a complete optical analysis of the ZnO layer deposited in a chloride rich solution. We demonstrate that high doping levels (>10(20) cm(-3)) and mobilities (up to 20 cm(2) V(-1) s(-1)) can be reached by insertion of chlorine in the lattice. The process developed in this study has been applied on a CdS/Cu(In,Ga)(Se,S)2 p-n junction produced in a pilot line by a non vacuum process, to be tested as solar cell front contact deposition method. As a result efficiency of 14.3% has been reached opening the way of atmospheric production of Cu(In,Ga)(Se,S)2 solar cell.

Nuclear physics uncertainties of the astrophysical γ-process studied through the 64Zn(p,α)61Cu and 64Zn(p,γ)65Ga reactions

NASA Astrophysics Data System (ADS)

Gyürky, Gy.; Fülöp, Zs.; Halász, Z.; Kiss, G. G.; Szücs, T.

2018-01-01

In a recent work, the cross section measurement of the 64Zn(p,α)61Cu reaction was used to prove that the standard α-nucleus optical potentials used in astrophysical network calculation fail to reproduce the experimental data at energies relevant for heavy element nucleosynthesis. In the present paper the analysis of the obtained experimental data are continued by comparing the results with the predictions using different parameters. It is shown that the recently suggested modification of the standard optical potential leads to a better description of the data.

Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN.

PubMed

Hou, Wenting; Stark, Christoph; You, Shi; Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

2012-08-10

In search of a better transparent contact to p-GaN, we analyze various metal/indium-tin-oxide (ITO) (Ag/ITO, AgCu/ITO, Ni/ITO, and NiZn/ITO) contact schemes and compare to Ni/Au, NiZn/Ag, and ITO. The metal layer boosts conductivity while the ITO thickness can be adjusted to constructive transmission interference on GaN that exceeds extraction from bare GaN. We find a best compromise for an Ag/ITO (3 nm/67 nm) ohmic contact with a relative transmittance of 97% of the bare GaN near 530 nm and a specific contact resistance of 0.03 Ω·cm2. The contact proves suitable for green light-emitting diodes in epi-up geometry.

Interfaces of high-efficiency kesterite Cu2ZnSnS(e)4 thin film solar cells

NASA Astrophysics Data System (ADS)

Gao, Shoushuai; Jiang, Zhenwu; Wu, Li; Ao, Jianping; Zeng, Yu; Sun, Yun; Zhang, Yi

2018-01-01

Cu2ZnSnS(e)4 (CZTS(e)) solar cells have attracted much attention due to the elemental abundance and the non-toxicity. However, the record efficiency of 12.6% for Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is much lower than that of Cu(In,Ga)Se2 (CIGS) solar cells. One crucial reason is the recombination at interfaces. In recent years, large amount investigations have been done to analyze the interfacial problems and improve the interfacial properties via a variety of methods. This paper gives a review of progresses on interfaces of CZTS(e) solar cells, including: (1) the band alignment optimization at buffer/CZTS(e) interface, (2) tailoring the thickness of MoS(e)2 interfacial layers between CZTS(e) absorber and Mo back contact, (3) the passivation of rear interface, (4) the passivation of front interface, and (5) the etching of secondary phases.

Stability of Cd 1–xZn xO yS 1–y Quaternary Alloys Assessed with First-Principles Calculations

DOE PAGES

Varley, Joel B.; He, Xiaoqing; Rockett, Angus; ...

2017-02-08

One route to decreasing the absorption in CdS buffer layers in Cu(In,Ga)Se 2 and Cu 2ZnSn(S,Se) 4 thin-film photovoltaics is by alloying. Here we use first-principles calculations based on hybrid functionals to assess the energetics and stability of quaternary Cd, Zn, O, and S (Cd 1–xZn xO yS 1–y) alloys within a regular solution model. Our results identify that full miscibility of most Cd 1–xZn xO yS 1–y compositions and even binaries like Zn(O,S) is outside typical photovoltaic processing conditions. Finally, the results suggest that the tendency for phase separation of the oxysulfides may drive the nucleation of other phasesmore » such as sulfates that have been increasingly observed in oxygenated CdS and ZnS.« less

Stability of Cd 1–xZn xO yS 1–y Quaternary Alloys Assessed with First-Principles Calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, Joel B.; He, Xiaoqing; Rockett, Angus

One route to decreasing the absorption in CdS buffer layers in Cu(In,Ga)Se 2 and Cu 2ZnSn(S,Se) 4 thin-film photovoltaics is by alloying. Here we use first-principles calculations based on hybrid functionals to assess the energetics and stability of quaternary Cd, Zn, O, and S (Cd 1–xZn xO yS 1–y) alloys within a regular solution model. Our results identify that full miscibility of most Cd 1–xZn xO yS 1–y compositions and even binaries like Zn(O,S) is outside typical photovoltaic processing conditions. Finally, the results suggest that the tendency for phase separation of the oxysulfides may drive the nucleation of other phasesmore » such as sulfates that have been increasingly observed in oxygenated CdS and ZnS.« less

Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se{sub 2} thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Lytvynenko, V. Yu.; Maslyanchuk, O. L.

2016-04-15

Optical and recombination losses in a Cu(In,Ga)Se{sub 2} thin-film solar cell with a band gap of 1.36–1.38 eV are theoretically analyzed. The optical transmittance of the ZnO and CdS layers through which the radiation penetrates into the absorbing layer is determined. Using optical constants, the optical loss caused by reflection at the interfaces (7.5%) and absorption in the ZnO and CdS layers (10.2%) are found. To calculate the recombination loss, the spectral distribution of the quantum efficiency of CdS/CuIn{sub 1–x}Ga{sub x}Se{sub 2} is investigated. It is demonstrated that, taking the drift and diffusion components of recombination at the front andmore » rear surfaces of the absorber into account, the quantum efficiency spectra of the investigated solar cell can be analytically described in detail. The real parameters of the solar cell are determined by comparing the calculated results and experimental data. In addition, the losses caused by the recombination of photogenerated carriers at the front and rear surfaces of the absorbing layer (1.8% and <0.1%, respectively), at its neutral part (7.6%), and in the space-charge region of the p–n heterojunction (1.0%) are determined. A correction to the parameters of Cu(In,Ga)Se{sub 2} is proposed, which enhances the charge-accumulation efficiency.« less

Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun-Sheng; Moutinho, Helio

2016-11-21

We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm frommore » the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.« less

Post-entry and volcanic contaminant abundances of zinc, copper, selenium, germanium and gallium in stratospheric micrometeorites

NASA Technical Reports Server (NTRS)

Rietmeijer, Frans J. M.

1995-01-01

Some fraction of Zn, Cu, Se, Ga and Ge in chondritic interplanetary dust particles (IDPs) collected in the lower stratosphere between 1981 May and 1984 June has a volcanic origin. I present a method to evaluate the extent of this unavoidable type of stratospheric contamination for individual particles. The mass-normalized abundances for Cu and Ge as a function of mass-normalized stratospheric residence time show their time-integrated stratospheric aerosol abundances. The Zn, Se and Ga abundances show a subdivision into two groups that span approximately two-year periods following the eruptions of the Mount St. Helens (1980 May) and El Chichon (1982 April) volcanoes. Elemental abundances in particles collected at the end of each two-year period indicate low, but not necessarily ambient, volcanic stratospheric abundances. Using this time-integrated baseline, I calculate the straospheric contaminant fractions in nine IDPs and show that Zn, SE and Ga abundances in chondritic IDPs derive in part from stratospheric aerosol contaminants. Post-entry elemental abundances (i.e., the amount that survived atmospheric entry heating of the IDP) show enrichments relative to the CI abundances but in a smaller number of particles than previously suggested.

High Pressure Properties of a Ba-Cu-Zn-P Clathrate-I

DOE PAGES

Dolyniuk, Juli -Anna; Kovnir, Kirill

2016-08-12

Here, the high pressure properties of the novel tetrel-free clathrate, Ba 8Cu 13.1Zn 3.3P 29.6, were investigated using synchrotron powder X-ray diffraction. The pressure was applied using a diamond anvil cell. No structural transitions or decomposition were detected in the studied pressure range of 0.1–7 GPa. The calculated bulk modulus for Ba 8Cu 13.1Zn 3.3P 29.6 using a third-order Birch-Murnaghan equation of state is 65(6) GPa at 300 K. This bulk modulus is comparable to the bulk moduli of Ge- and Sn-based clathrates, like A 8Ga 16Ge 30 (A = Sr, Ba) and Sn 19.3Cu 4.7P 22I 8, but lowermore » than those for the transition metal-containing silicon-based clathrates, Ba 8 T xSi46–x, T = Ni, Cu; 3 ≤ x ≤ 5.« less

Proposed suitable electron reflector layer materials for thin-film CuIn1-xGaxSe2 solar cells

NASA Astrophysics Data System (ADS)

Sharbati, Samaneh; Gharibshahian, Iman; Orouji, Ali A.

2018-01-01

This paper investigates the electrical properties of electron reflector layer to survey materials as an electron reflector (ER) for chalcopyrite CuInGaSe solar cells. The purpose is optimizing the conduction-band and valence-band offsets at ER layer/CIGS junction that can effectively reduce the electron recombination near the back contact. In this work, an initial device model based on an experimental solar cell is established, then the properties of a solar cell with electron reflector layer are physically analyzed. The electron reflector layer numerically applied to baseline model of thin-film CIGS cell fabricated by ZSW (efficiency = 20.3%). The improvement of efficiency is achievable by electron reflector layer materials with Eg > 1.3 eV and -0.3 < Δχ < 0.7, depends on bandgap. Our simulations examine various electron reflector layer materials and conclude the most suitable electron reflector layer for this real CIGS solar cells. ZnSnP2, CdSiAs2, GaAs, CdTe, Cu2ZnSnS4, InP, CuO, Pb10Ag3Sb11S28, CuIn5S8, SnS, PbCuSbS3, Cu3AsS4 as well as CuIn1-xGaxSe (x > 0.5) are efficient electron reflector layer materials, so the potential improvement in efficiency obtained relative gain of 5%.

Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se2 Solar Cell with CBD-ZnS Buffer Layer.

PubMed

Lee, Woo-Jung; Yu, Hye-Jung; Wi, Jae-Hyung; Cho, Dae-Hyung; Han, Won Seok; Yoo, Jisu; Yi, Yeonjin; Song, Jung-Hoon; Chung, Yong-Duck

2016-08-31

We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with a chemical bath deposition (CBD)-ZnS buffer layer grown with varying ammonia concentrations in aqueous solution. The solar cell performance was degraded with increasing ammonia concentration, due to actively dissolved Zn atoms during CBD-ZnS precipitation. These formed interfacial defect states, such as hydroxide species in the CBD-ZnS film, and interstitial and antisite Zn defects at the p-n heterojunction. After light/UV soaking, the CIGS solar cell performance drastically improved, with a rise in fill factor. With the Zn-based buffer layer, the light soaking treatment containing blue photons induced a metastable state and enhanced the CIGS solar cell performance. To interpret this effect, we suggest a band structure model of the p-n heterojunction to explain the flow of photocarriers under white light at the initial state, and then after light/UV soaking. The determining factor is a p+ defect layer, containing an amount of deep acceptor traps, located near the CIGS surface. The p+ defect layer easily captures photoexcited electrons, and then when it becomes quasi-neutral, attracts photoexcited holes. This alters the barrier height and controls the photocurrent at the p-n junction, and fill factor values, determining the solar cell performance.

Metallogeny of precious and base metal mineralization in the Murchison Greenstone Belt, South Africa: indications from U-Pb and Pb-Pb geochronology

NASA Astrophysics Data System (ADS)

Jaguin, J.; Poujol, M.; Boulvais, P.; Robb, L. J.; Paquette, J. L.

2012-10-01

The 3.09 to 2.97 Ga Murchison Greenstone Belt is an important metallotect in the northern Kaapvaal Craton (South Africa), hosting several precious and base metal deposits. Central to the metallotect is the Antimony Line, striking ENE for over 35 km, which hosts a series of structurally controlled Sb-Au deposits. To the north of the Antimony Line, hosted within felsic volcanic rocks, is the Copper-Zinc Line where a series of small, ca. 2.97 Ga Cu-Zn volcanogenic massive sulfide (VMS)-type deposits occur. New data are provided for the Malati Pump gold mine, located at the eastern end of the Antimony Line. Crystallizations of a granodiorite in the Malati Pump Mine and of the Baderoukwe granodiorite are dated at 2,964 ± 7 and 2,970 ± 7 Ma, respectively (zircon U-Pb), while pyrite associated with gold mineralization yielded a Pb-Pb age of 2,967 ± 48 Ma. Therefore, granodiorite emplacement, sulfide mineral deposition and gold mineralization all happened at ca. 2.97 Ga. It is, thus, suggested that the major styles of orogenic Au-Sb and the Cu-Zn VMS mineralization in the Murchison Greenstone Belt are contemporaneous and that the formation of meso- to epithermal Au-Sb mineralization at fairly shallow levels was accompanied by submarine extrusion of felsic volcanic rocks to form associated Cu-Zn VMS mineralization.

Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

2010-12-01

We present a device characterization study for hydrazine-processed kesterite Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with a focus on pinpointing the main loss mechanisms limiting device efficiency. Temperature-dependent study and time-resolved photoluminescence spectroscopy on these cells, in comparison to analogous studies on a reference Cu(In,Ga)(Se,S)2 (CIGS) cell, reveal strong recombination loss at the CZTSSe/CdS interface, very low minority-carrier lifetimes, and high series resistance that diverges at low temperature. These findings help identify the key areas for improvement of these CZTSSe cells in the quest for a high-performance indium- and tellurium-free solar cell.

COPPER-64 Production Studies with Natural Zinc Targets at Deuteron Energy up to 19 Mev and Proton Energy from 141 Down to 31 Mev

NASA Astrophysics Data System (ADS)

Bonardi, Mauro L.; Birattari, Claudio; Groppi, Flavia; Song Mainard, Hae; Zhuikov, Boris L.; Kokhanyuk, Vladimir M.; Lapshina, Elena V.; Mebel, Michail V.; Menapace, Enzo

2004-07-01

High specific activity no-carrier-added 64Cu is a β-/β+ emitting radionuclide of increasing interest for PET imaging, as well as systemic and targeted radioimmunotherapy of tumors. Its peculiarity of intense Auger emitter is still under investigation. The cross-sections for production of 64Cu from Zn target of natural isotopic composition were measured in the deuteron energy range from threshold up to 19 MeV and proton energy range from 141 down to 31 MeV. The stacked-foil technique was used at both K=38 cyclotron of JRC-Ispra of CEC, Italy and 160 MeV intersection point of INR proton-LINAC in Troitsk, Russia. Several Ga, Zn, Cu, Ni, Co, V, Fe and Mn radionuclides were detected in Zn targets at the EOB. Optimized irradiation conditions are reported as a function of deuteron energy and energy loss into the Zn target, as well as target irradiation time and cooling time after radiochemistry. The activity of n.c.a. 64Cu was measured through its only γ emission of 1346 keV (i.e. 0.473 % intensity) both by instrumental and radiochemical methods, due to the non-specificity of annihilation radiation at 511 keV. To this last purpose, it was necessary to carry out a selective radiochemical separation of GaIII radionuclides by liquid/liquid extraction from the bulk of irradiated Zn targets and other spallation products, which remained in the 7 M HCl aqueous phase. Anion exchange chromatography tests had been carried out to separate the 64Cu from all others radionuclides in n.c.a. form. Theoretical calculations of cross-sections were performed with codes EMPIRE II and PENELOPE for deuteron reactions and CEF model and HMS-ALICE hybrid model for proton reactions. The theoretical results are presented and compared with the experimental values.

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

PubMed

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Interface doping of conjugated organic films by means of diffusion of atomic components from the surfaces of semiconductors and of metal oxides.

PubMed

Komolov, A S; Akhremtchik, S N; Lazneva, E F

2011-08-15

The paper reports the results on the interface formation of 5-10 nm thick conjugated layers of Cu-phthalocyanine (CuPc) with a number of solid surfaces: polycrystalline Au, (SiO(2))n-Si, ZnO(0 0 0 1), Si(1 0 0), Ge(1 1 1), CdS(0 0 0 1) and GaAs(1 0 0). The results were obtained using Auger electron spectroscopy (AES) and low-energy target current electron spectroscopy (TCS). The organic overlayers were thermally deposited in situ in UHV onto substrate surfaces. The island-like organic deposits were excluded from the analysis so that only uniform organic deposits were considered. In the cases of polycrystalline Au, Si(1 0 0) and Ge(1 1 1) substrates the AES peaks of the substrate material attenuated down to the zero noise level upon the increase of the CuPc film thickness of 8-10 nm. The peaks corresponding to oxygen atoms in the case of SiO(2) substrate, and to atoms from the ZnO, GaAs and CdS substrates were clearly registered in the AES spectra of the 8-10 nm thick CuPc deposits. The relative concentration of the substrate atomic components diffused into the film was different from their relative concentration at the pure substrate surface. The concentration of the substrate dopant atoms in the CuPc film was estimated as one atom per one CuPc molecule. Using the target current electron spectroscopy, it was shown that the substrate atoms admixed in the CuPc film account for the appearance of a new peak in the density of unoccupied electronic states. Formation of intermediate TCS spectra until the CuPc deposit reaches 2-3 nm was observed in the cases of GaAs(1 0 0), ZnO(0 0 0 1), Ge(1 1 1) surfaces. The intermediate spectra show a less pronounced peak structure different from the one typical for the CuPc films. It was suggested that the intermediate layer was formed by the CuPc molecules fully or partially decomposed due to the interaction with the relatively reactive semiconductor surfaces. Copyright © 2010 Elsevier B.V. All rights reserved.

Visible light-induced OH radicals in Ga2O3: an EPR study.

PubMed

Tzitrinovich, Zeev; Lipovsky, Anat; Gedanken, Aharon; Lubart, Rachel

2013-08-21

Reactive oxygen species (ROS) were found to exist in water suspensions of several metal oxide nanoparticles (NPs), such as CuO, TiO2 and ZnO. Visible light irradiation enhanced the capability of TiO2 and ZnO NPs to generate ROS, thus increasing their antibacterial effects. Because of the possible toxic effects on the host tissue it is desired to find nano-metal oxides which do not produce ROS under room light, but only upon a strong external stimulus. Using the technique of electron-spin resonance (ESR) coupled with spin trapping, we examined the ability of Ga2O3 submicron-particle suspensions in water to produce reactive oxygen species with and without visible light irradiation. We found that in contrast to ZnO and TiO2 NPs, no ROS are produced by Ga2O3 under room light. Nevertheless blue light induced hydroxyl radical formation in Ga2O3. This finding might suggest that NPs of Ga2O3 could be used safely for infected skin sterilization.

Discrimination between mineralized and unmineralized alteration zones using primary geochemical haloes in the Darreh-Zar porphyry copper deposit in Kerman, southeastern Iran

NASA Astrophysics Data System (ADS)

Parsapoor, A.; Khalili, M.; Maghami, M.

2017-08-01

Primary geochemical haloes were studied at the Darreh-Zar porphyry Cu-deposit, southern Iran. In terms of geochemical signatures, high K2O/Na2O enrichment, HREEs and HFSE's depletion in the potassic alteration, high (La/Sm)cn, (La/Yb)cn and (Gd/Yb)cn ratios in mineralized sericitic and potassic zones and notable depletion in the REEs content in argillic alteration is recognized. Further, Mg, Li, Sc, P enrichment and W depletion can serve to separate potassic alteration from the other altered zones, while (Eu/Eu*)cn and (Ce/Ce*)cn don't show pronounced changes in different alteration zones. The coupled positive Tl, Se, S, Rb, Co, Cs, Mo, K and negative Te, Ta, Ti, Sr, Rb, As, Bi, Ga, Hf, In, Mn, Zn and Zr anomalies can be adequately used in discriminating between the mineralized zones (potassic, chlorite-sericite and sericite alterations) and the barren (propylitic zone). The behavior of the trace elements on isocon diagrams reveal that HFSEs are depleted in mineralized altered zones and display variations in the amounts in the barren facies. Zonality index in the axial direction from drill holes 146 to 124 estimates the zonality sequence as Pb-Zn-Ag-Cu-Pb-Zn in the surface horizons. The calculated zonality in five drill holes and six levels indicates that the level of 550 m at the DH 117 in the central part of the area has the highest value (0.76) for Cu. The zonality sequence from the surface to the depth is variable and can be demonstrated as follow: DH 146: Pb-Zn-Cu-Mo-Ag; DH 137: Zn-Cu-Mo-Pb-Ag; DH 117: Ag-Zn-Pb-Mo-Cu; DH: 121: Cu-Mo-Zn-Ag-Pb; DH 136: Pb-Ag-Zn-Cu-Mo; DH 124: Zn-Mo-Cu-Pb-Ag. Available data of the enrichment factors shows different enrichment for copper and molybdenum (i.e. EF > 10), selenium and silver (i.e. EF > 5), tin and LREEs (i.e. 1 < EF < 5).

CIGS thin film solar cell prepared by reactive co-sputtering

NASA Astrophysics Data System (ADS)

Kim, Jeha; Lee, Ho-Sub; Park, Nae-Man

2013-09-01

The reactive co-sputtering was developed as a new way of preparing high quality CuInGaSe2(CIGS) films from two sets of targets; Cu0.6Ga 0.4 and Cu0.4In0.6 alloy and Cu and (In0.7Ga0.3)2Se3 compound targets. During sputtering, Cu, In, Ga metallic elements as well as the compound materials were reacted to form CIGS simultaneously in highly reactive elemental Se atmosphere generated by a thermal cracker. CIGS layer had been grown on Mo/soda-lime glass(SLG) at 500°C. For both sets of targets, we controlled the composition of CIGS thin film by changing the RF power for target components. All the films showed a preferential (112) orientation as observed from X-ray diffraction analysis. The composition ratios of CIGS were easily set to 0.71-0.95, 0.10-0.30 for [Cu]/[III] and [Ga]/[III], respectively. The grain size and the surface roughness of a CIGS film increased as the [Cu]/[III] ratios increased. The solar cells were fabricated using a standard base line process in the device structure of grid/ITO/i-ZnO/CdS/CIGS/Mo/ SLG. The best performance was obtained the performance of Voc = 0.45 V, Jsc =35.6, FF = 0.535, η = 8.6% with a 0.9 μm-CIGS solar cell from alloy targets while Voc = 0.54 V, Jsc =30.8, FF = 0.509, η = 8.5% with a 0.8 μm-CIGS solar cell from Cu and (In0.7Ga0.3)2Se3.

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells

NASA Astrophysics Data System (ADS)

Yang, J.; Du, H. W.; Li, Y.; Gao, M.; Wan, Y. Z.; Xu, F.; Ma, Z. Q.

2016-08-01

The carriers' behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se2 thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely VSe, InCu and (InCu+VCu), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of EC-0.08, EC-0.20 and EC-0.25 eV, respectively. The InCu and (InCu+VCu) deep level defects are non-radiative recombination centers at room temperature. The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se2 layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (InCu+VCu) and Vse defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se2 conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.

Determination of the Extent of Trace Metals Pollution in Soils, Sediments and Human Hair at e-Waste Recycling Site in Ghana.

PubMed

Tokumaru, Takashi; Ozaki, Hirokazu; Onwona-Agyeman, Siaw; Ofosu-Anim, John; Watanabe, Izumi

2017-10-01

The concentrations of trace elements (Mg, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, As, Se, Rb, Sr, Y, Mo, Cd, In, Sn, Sb, Cs, Ba, Tl, Pb, and Bi) in soils, sediment, human hair, and foodstuff collected around the electronic waste (e-waste) recycling sites in Accra, Ghana were detected using inductively coupled plasma-mass spectrometry (ICP-MS). High levels of Cu, Zn, Mo, Cd, In, Sn, Sb, and Pb were observed in soils collected from the e-waste recycling sites. Four sequential extraction procedures were used to evaluate the mobility and bioavailability of metals (Cu, Zn, Cd, Sb, and Pb). Especially, the results showed that Cd and Zn in soils were mostly recovered in exchangeable fraction (respectively 58.9 and 62.8%). Sediment collected from around the site had enrichment of Zn, Sn, Sb, Mo, In, Pb, and Bi. The concentrations of Cu, Mo, Cd, Sb, and Pb in human hair were significantly higher than those collected from the control site (p < 0.01). Additionally, hierarchical cluster analysis reviewed that these elements were derived from e-waste activities. The results of Pb isotopic ratios in the samples indicate that Pb in human hair possibly originated from contaminated soils, fish, and foodstuff.

Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cai, Duanjun; Wang, Huachun; Huang, Youyang; Wu, Chenping; Chen, Xiaohong; Gao, Na; Wei, Tongbo T.; Wang, Junxi; Li, Shuping; Kang, Junyong

2016-09-01

Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

Production of copper-64 and gallium-68 with a medical cyclotron using liquid targets

NASA Astrophysics Data System (ADS)

Alves, F.; Alves, V. H. P.; Do Carmo, S. J. C.; Neves, A. C. B.; Silva, M.; Abrunhosa, A. J.

2017-06-01

This work describes the production of two clinically relevant metal radioisotopes 64Cu and 68Ga with a medical cyclotron by the irradiation of liquid targets. New results are presented for the implementation of this methodology in a fully automated system, using commercially available equipment. Liquid target solutions containing enriched 64Ni and 68Zn were loaded, bombarded and transferred to synthesis modules where a purified solution containing the desired radiometal is obtained and can then be used to further radiolabeling within only one hour after End-Of-Bombardment (EOB). Typical production runs using enriched material lead to the production of 5 GBq and 6 GBq (0.14 MBq/(μAh ṡ mg) and 1.5 MBq/(μAh ṡ mg)) of 64Cu and 68Ga; although the technique can be used to obtain up to 25 GBq and 40 GBq, respectively, by simply scaling up the amount of the enriched material. Purified solutions containing 64Cu and 68Ga were obtained within 30 min after EOB and used to produce 64Cu-ATSM and 68Ga-DOTA-NOC, respectively, with quality parameters suitable for human use.

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Bent, Stacey F.; Li, Jian V.

2015-07-20

Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystallinemore » II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II-VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Reducing interface recombination for Cu(In,Ga)Se 2 by atomic layer deposited buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hultqvist, Adam; Li, Jian V.; Kuciauskas, Darius

2015-07-20

Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VImore » systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.« less

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se{sub 2} solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, J.; Du, H. W.; Li, Y.

2016-08-15

The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se{sub 2} thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely V{sub Se}, In{sub Cu} and (In{sub Cu}+V{sub Cu}), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of E{sub C}-0.08, E{sub C}-0.20 and E{sub C}-0.25 eV, respectively. The In{sub Cu} and (In{sub Cu}+V{sub Cu}) deep level defects are non-radiative recombination centers at room temperature.more » The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se{sub 2} layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (In{sub Cu}+V{sub Cu}) and V{sub se} defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se{sub 2} conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.« less

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Minority carrier diffusion length extraction in Cu2ZnSn(Se,S)4 solar cells

NASA Astrophysics Data System (ADS)

Gokmen, Tayfun; Gunawan, Oki; Mitzi, David B.

2013-09-01

We report measurement of minority carrier diffusion length (Ld) for high performance Cu2ZnSn(S,Se)4 (CZTSSe) solar cells in comparison with analogous Cu(In,Ga)(S,Se)2 (CIGSSe) devices. Our Ld extraction method involves performing systematic measurements of the internal quantum efficiency combined with separate capacitance-voltage measurement. This method also enables the measurement of the absorption coefficient of the absorber material as a function of wavelength in a finished device. The extracted values of Ld for CZTSSe samples are at least factor of 2 smaller than those for CIGSSe samples. Combined with minority carrier lifetime (τ) data measured by time-resolved photoluminescence, we deduce the minority carrier mobility (μe), which is also relatively low for the CZTSSe samples.

SXRF determination of trace elements in chondrule rims in the unequilibrated CO3 chondrite, ALH A77307

NASA Technical Reports Server (NTRS)

Brearley, Adrian J.; Bajt, Sasa; Sutton, Steve R.; Papike, J. J.

1993-01-01

The concentrations of Ni, Cu, Zn, Ga, Ge, and Se in five chondrule rims in the CO3 chondrite ALH A77307 (3.0) using the synchrotron x-ray fluorescence (SXRF) microprobe at Brookhaven National Laboratory were determined. The data show that the trace element chemistry of rims on different chondrules is remarkably similar, consistent with data obtained for the major elements by electron microprobe. These results support the idea that rims are not genetically related to individual chondrules, but all sampled the same reservoir of homogeneously mixed dust. Of the trace elements analyzed Zn and Ga show depletions relative to CI chondrite values, but in comparison with bulk CO chondrites all the elements are enriched by approximately 1.5 to 3.5 x CO. The high concentrations of the highly volatile elements Se and Ga and moderately volatile Zn (1.5 to 2 x CO) in rims show that matrix is the major reservoir of volatile elements in ALH A77307.

Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering.

PubMed

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

2018-03-28

An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se) 2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu 2- x Se-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J- V- T analysis.

Properties of GaN grown on sapphire substrates

NASA Technical Reports Server (NTRS)

Crouch, R. K.; Debnam, W. J.; Fripp, A. L.

1978-01-01

Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

Photoluminescence as a tool for characterizing point defects in semiconductors

NASA Astrophysics Data System (ADS)

Reshchikov, Michael

2012-02-01

Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

BariumCopperChFluorine (Ch = Sulfur, Selenium, Tellurium) p-type transparent conductors

NASA Astrophysics Data System (ADS)

Zakutayev, Andriy

BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 -- 3.5 eV) and a high concentration of free holes (1018 -- 1020 cm-3 ) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level close to the valence band maximum. BaCuChF thin film solid solutions prepared by pulsed laser deposition (PLD) have tunable properties, such as lattice constants, conductivity and optical band gaps. BaCuSF and BaCuSeF materials also feature room-temperature stable 3D excitons with spin-orbit-split levels. BaCuTeF has forbidden lowest-energy optical transitions which extends its transparency range. BaCuChF surfaces oxidize when exposed to air, but can be protected using Ch capping layers. Polycrystalline BaCuSeF thin films have a 4.85 eV work function, a 0.11 eV hole injection barrier into ZnPc, and 0.00 eV valence band offset with ZnTe. BaCuSeF should have s similar band offset and similar interfacial properties with CdTe and Cu(InGa)Se2, and BaCuSF should have no valence band offset with Cu2ZnSnS4, according to the transitivity rule. Therefore, BaCuSeF is suitable for applications as a p-layer in organic light-emitting diodes, p-i-n double-heterojunction and tandem chalcogenide solar cells.

Electrodeposition of ZnO-doped films as window layer for Cd-free CIGS-based solar cells

NASA Astrophysics Data System (ADS)

Tsin, Fabien; Vénérosy, Amélie; Hildebrandt, Thibaud; Hariskos, Dimitrios; Naghavi, Negar; Lincot, Daniel; Rousset, Jean

2016-02-01

The Cu(In,Ga)Se2 (CIGS) thin film solar cell technology has made a steady progress within the last decade reaching efficiency up to 22.3% on laboratory scale, thus overpassing the highest efficiency for polycrystalline silicon solar cells. High efficiency CIGS modules employ a so-called buffer layer of cadmium sulfide CdS deposited by Chemical Bath Deposition (CBD), which presence and Cd-containing waste present some environmental concerns. A second potential bottleneck for CIGS technology is its window layer made of i-ZnO/ZnO:Al, which is deposited by sputtering requiring expensive vacuum equipment. A non-vacuum deposition of transparent conductive oxide (TCO) relying on simpler equipment with lower investment costs will be more economically attractive, and could increase competitiveness of CIGS-based modules with the mainstream silicon-based technologies. In the frame of Novazolar project, we have developed a low-cost aqueous solution photo assisted electrodeposition process of the ZnO-based window layer for high efficiency CIGS-based solar cells. The window layer deposition have been first optimized on classical CdS buffer layer leading to cells with efficiencies similar to those measured with the sputtered references on the same absorber (15%). The the optimized ZnO doped layer has been adapted to cadmium free devices where the CdS is replaced by chemical bath deposited zinc oxysulfide Zn(S,O) buffer layer. The effect of different growth parameters has been studied on CBD-Zn(S,O)-plated co-evaporated Cu(In,Ga)Se2 substrates provided by the Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW). This optimization of the electrodeposition of ZnO:Cl on CIGS/Zn(S,O) stacks led to record efficiency of 14%, while the reference cell with a sputtered (Zn,Mg)O/ZnO:Al window layer has an efficiency of 15.2%.

Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods

NASA Astrophysics Data System (ADS)

Gunawan, Oki; Gokmen, Tayfun; Warren, Charles W.; Cohen, J. David; Todorov, Teodor K.; Barkhouse, D. Aaron R.; Bag, Santanu; Tang, Jiang; Shin, Byungha; Mitzi, David B.

2012-06-01

Admittance spectra and drive-level-capacitance profiles of several high performance Cu2ZnSn(Se,S)4 (CZTSSe) solar cells with bandgap ˜1.0-1.5 eV are reported. In contrast to the case for Cu(In,Ga)(S,Se)2, the CZTSSe capacitance spectra exhibit a dielectric freeze out to the geometric capacitance plateau at moderately low frequencies and intermediate temperatures (120-200 K). These spectra reveal important information regarding the bulk properties of the CZTSSe films, such as the dielectric constant and a dominant acceptor with energy level of 0.13-0.2 eV depending on the bandgap. This deep acceptor leads to a carrier freeze out effect that quenches the CZTSSe fill factor and efficiency at low temperatures.

Facile Growth of Cu2ZnSnS4 Thin-Film by One-Step Pulsed Hybrid Electrophoretic and Electroplating Deposition.

PubMed

Tsai, Hung-Wei; Chen, Chia-Wei; Thomas, Stuart R; Hsu, Cheng-Hung; Tsai, Wen-Chi; Chen, Yu-Ze; Wang, Yi-Chung; Wang, Zhiming M; Hong, Hwen-Fen; Chueh, Yu-Lun

2016-02-23

The use of costly and rare metals such as indium and gallium in Cu(In,Ga)Se2 (CIGS) based solar cells has motivated research into the use of Cu2ZnSnS4 (CZTS) as a suitable replacement due to its non-toxicity, abundance of compositional elements and excellent optical properties (1.5 eV direct band gap and absorption coefficient of ~10(4) cm(-1)). In this study, we demonstrate a one-step pulsed hybrid electrodeposition method (PHED), which combines electrophoretic and electroplating deposition to deposit uniform CZTS thin-films. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm(2), 0.43 and 0.59%, respectively.

An over 18%-efficiency completely buffer-free Cu(In,Ga)Se2 solar cell

NASA Astrophysics Data System (ADS)

Ishizuka, Shogo; Nishinaga, Jiro; Koida, Takashi; Shibata, Hajime

2018-07-01

In this letter, an independently certified photovoltaic efficiency of 18.4% demonstrated from a completely buffer-layer-free Cu(In,Ga)Se2 (CIGS) solar cell is reported. A Si-doped CIGS thin film was used as the photoabsorber layer and a conductive B-doped ZnO (BZO) front electrode layer was directly deposited on the CIGS layer. Metastable acceptor activation by heat-light soaking treatment was performed to maximize the efficiency. The results presented here are expected to serve as a benchmark for simplified-structure CIGS devices as well as a reference for discussions on the role of buffer layers used in conventional CIGS solar cells.

Concentrations of trace elements in marine fish and its risk assessment in Malaysia.

PubMed

Agusa, Tetsuro; Kunito, Takashi; Yasunaga, Genta; Iwata, Hisato; Subramanian, Annamalai; Ismail, Ahmad; Tanabe, Shinsuke

2005-01-01

Concentrations of trace elements (V, Cr, Mn, Co, Cu, Zn, Ga, Se, Rb, Sr, Mo, Ag, Cd, Sn, Sb, Cs, Ba, Hg, Tl, Pb and Bi) were determined in muscle and liver of 12 species of marine fish collected from coastal areas in Malaysia. Levels of V, Cr, Mn, Co, Cu, Zn, Ga, Sr, Mo, Ag, Cd, Sn, Ba and Pb in liver were higher than those in muscle, whereas Rb and Cs concentrations showed the opposite trend. Positive correlations between concentrations in liver and muscle were observed for all the trace elements except Cu and Sn. Copper, Zn, Se, Ag, Cd, Cs and Hg concentrations in bigeye scads from the east coast of the Peninsular Malaysia were higher than those from the west, whereas V showed the opposite trend. The high concentration of V in the west coast might indicate oil contamination in the Strait of Malacca. To evaluate the health risk to Malaysian population through consumption of fish, intake rates of trace elements were estimated on the basis of the concentrations of trace elements in muscle of fish and daily fish consumption. Some specimens of the marine fish had Hg levels higher than the guideline value by US Environmental Protection Agency (EPA), indicating that consumption of these fish at the present rate may be hazardous to Malaysian people. To our knowledge, this is the first study on multielemental accumulation in marine fish from the Malaysian coast.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Accumulation degree and source apportionment of trace metals in smaller than 63 μm road dust from the areas with different land uses: A case study of Xi'an, China.

PubMed

Shi, Dongqi; Lu, Xinwei

2018-09-15

Finer urban dusts have more serious environmental detriment and health risk than coarser urban dusts. The trace metals Pb, Cu, Zn, Cr, Co, Ba, Mn, Ni, V, Y, Rb, Ga, Hf, and Zr were analyzed using X-ray fluorescence spectrometry in smaller than 63 μm road dust collected from the areas with different land use types and human activities in Xi'an city. The purposes of this study were to reveal the impact of human activities on the environment through element enrichment factor, and to determine the sources of trace metals measured by multivariate statistical analysis and multiple liner regression of absolute principal component scores. The results indicated that the smaller than 63 μm road dust in Xi'an, in comparison to the element background value of local soil, had higher Cu, Pb, Zn, Cr, Y, Hf and Zr concentrations. Trace metals had different variations in the dusts, while the anthropogenic trace metals had no significant difference in the four areas owing to the wide existing of human activities. The accumulation level of Pb was the highest, followed by Cr, Cu and Zn, and then was Hf and Zr, while the other trace metals were deficient or deficient to minimal enrichment in the finer road dust. Source analysis results indicated that Co, Ga, Mn, Ni, V, Rb and Y mainly originated from natural source, which accounted about 57%-87% for these metals' concentration. Ba, Cr, Pb, Cu and Zn primarily derived from traffic source, which contributed approximately 59%-79% to these metals' content. Hf and Zr were mainly from construction source, which contributed 74.6% to Hf concentration and 78.2% to Zr concentration. The study indicated that traffic and construction activities had a predominant influence on local environment. Copyright © 2018 Elsevier B.V. All rights reserved.

Geochemistry and petrology of the indium-bearing polymetallic skarn ores at Pitkäranta, Ladoga Karelia, Russia

NASA Astrophysics Data System (ADS)

Valkama, M.; Sundblad, K.; Cook, N. J.; Ivashchenko, V. I.

2016-08-01

The historic mining district of Pitkäranta in the Ladoga region, Fennoscandian Shield, was exploited for Fe, Cu, Zn, Pb, Sn and Ag in the nineteenth to twentieth centuries. The Pitkäranta region is dominated by Palaeoproterozoic supracrustal rocks, which, together with gneissic Archaean dome structures, constitute an allochthonous terrane complex that amalgamated to the Archaean continent during the Svecokarelian orogeny at 1.9-1.8 Ga. This crustal complex was intruded by 1.8 Ga Late orogenic granites, 1.54 Ga anorogenic rapakivi granites and 1.45 Ga dolerites. The polymetallic skarn ores of Pitkäranta extend over a 25-km-long zone in Palaeoproterozoic supracrustal rocks and formed from hydrothermal solutions, which emanated from the anorogenic rapakivi granites and reacted with marble layers. Four major ore types are recognised after the dominating metal: Fe, Cu, Sn and Zn, respectively. These types are not restricted to individual mines or mine fields but represent end members in zonation patterns within each ore body. Pitkäranta was the second discovery site in the world for indium but has been without modern documentation for more than 75 years. The indium contents in the ores are up to 600 ppm, in most cases sphalerite-hosted. The only roquesite-bearing sample in this study had an indium grade of 291 ppm and an In/Zn ratio of 51 (close to the criteria for the limiting conditions for creating an In-rich mineral). The Pitkäranta ores have a potential for future small-scale exploitation, but all such plans are hampered by high contents if Bi, Cd and As.

Potential Fluctuations and Localization Effects in CZTS Single Crystals, as Revealed by Optical Spectroscopy

NASA Astrophysics Data System (ADS)

Bleuse, Joël; Ducroquet, Frédérique; Mariette, Henri

2018-03-01

Reports on Cu_2 ZnSn(S_x Se_{1-x} )_4 (CZTSSe) solar cell devices all show an open-circuit voltage lower than expected, especially when compared to CuIn_x Ga_{1-x} (S,Se)_2 devices, which reduces their power efficiency and delays their development. A high concentration of intrinsic defects in CZTSSe, and their stabilization through neutral complex formation, which induces some local fluctuations, are at the origin of local energy shifts in the conduction and valence band edges. The implied band tail in Cu_2 ZnSnS_4 is studied in this work by combining three types of optical spectroscopy data: emission spectra compared to photoluminescence excitation spectroscopy, emission spectra as a function of excitation power, and time-resolved photoluminescence spectra. All these data converge to show that both the bandgap and the band tail of localized states just below are dependent on the degree of order/disorder in the Cu/Zn cation sublattice of the quaternary structure: in the more ordered structures, the bandgap increases by about 50 meV, and the energy range of the band tail is decreased from about 110 to 70 meV.

Abnormal specific heat enhancement and non-Fermi-liquid behavior in the heavy-fermion system U2Cu17 -xGax (5 ≤x ≤8 )

NASA Astrophysics Data System (ADS)

Svanidze, E.; Amon, A.; Prots, Yu.; Leithe-Jasper, A.; Grin, Yu.

2018-03-01

In the antiferromagnetic heavy-fermion compound U2Zn17 , the Sommerfeld coefficient γ can be enhanced if all Zn atoms are replaced by a combination of Cu and Al or Cu and Ga. In the former ternary phase, glassy behavior was observed, while for the latter, conflicting ground-state reports suggest material quality issues. In this work, we investigate the U2Cu17 -xGax substitutional series for 4.5 ≤x ≤9.5 . In the homogeneity range of the phase with the Th2Zn17 -type of crystal structure, all samples exhibit glassy behavior with 0.6 K ≤Tf≤1.8 K . The value of the electronic specific heat coefficient γ in this system exceeds 900 mJ/molUK2. Such a drastic effective-mass enhancement can possibly be attributed to the effects of structural disorder, since the role of electron concentration and lattice compression is likely minimal. Crystallographic disorder is also responsible for the emergence of non-Fermi-liquid behavior in these spin-glass materials, as evidenced by logarithmic divergence of magnetic susceptibility, specific heat, and electrical resistivity.

Critical elements in sediment-hosted deposits (clastic-dominated Zn-Pb-Ag, Mississippi Valley-type Zn-Pb, sedimentary rock-hosted Stratiform Cu, and carbonate-hosted Polymetallic Deposits): A review: Chapter 12

USGS Publications Warehouse

Marsh, Erin; Hitzman, Murray W.; Leach, David L.

2016-01-01

Some sediment-hosted base metal deposits, specifically the clastic-dominated (CD) Zn-Pb deposits, carbonate-hosted Mississippi Valley-type (MVT) deposits, sedimentary-rock hosted stratiform copper deposits, and carbonate-hosted polymetallic (“Kipushi type”) deposits, are or have been important sources of critical elements including Co, Ga, Ge, and Re. The generally poor data concerning trace element concentrations in these types of sediment-hosted ores suggest that there may be economically important concentrations of critical elements yet to be recognized.

Characteristics of trace metals in traffic-derived particles in Hsuehshan Tunnel, Taiwan: size distribution, potential source, and fingerprinting metal ratio

NASA Astrophysics Data System (ADS)

Lin, Y.-C.; Tsai, C.-J.; Wu, Y.-C.; Zhang, R.; Chi, K.-H.; Huang, Y.-T.; Lin, S.-H.; Hsu, S.-C.

2015-04-01

Traffic emissions are a significant source of airborne particulate matter (PM) in ambient environments. These emissions contain an abundance of toxic metals and thus pose adverse effects on human health. Size-fractionated aerosol samples were collected from May to September 2013 by using micro-orifice uniform deposited impactors (MOUDIs). Sample collection was conducted simultaneously at the inlet and outlet sites of Hsuehshan Tunnel in northern Taiwan, which is the second-longest freeway tunnel (12.9 km) in Asia. This endeavor aims to characterize the chemical constituents and size distributions, as well as fingerprinting ratios of particulate metals emitted by vehicle fleets. A total of 36 metals in size-resolved aerosols were determined through inductively coupled plasma mass spectrometry. Three major groups - namely, tailpipe emissions (Zn, Pb, and V in fine mode), wear debris (Cu, Cd, Fe, Ga, Mn, Mo, Sb, and Sn), and resuspended dust (Ca, Mg, K, and Rb) - of airborne PM metals were categorized on the basis of the results of enrichment factor, correlation matrix, and principal component analysis. Size distributions of wear-originated metals resembled the pattern of crustal elements, which were predominated by super-micron particulates (PM1-10). By contrast, tailpipe exhaust elements such as Zn, Pb, and V were distributed mainly in submicron particles. By employing Cu as a tracer of wear abrasion, several inter-metal ratios - including Fe / Cu (14), Ba / Cu (1.05), Sb / Cu (0.16), Sn / Cu (0.10), and Ga / Cu (0.03) - served as fingerprints for wear debris. However, the data set collected in this work is useful for further studies on traffic emission inventory and human health effects of traffic-related PM.

Characteristics of trace metals in traffic-derived particles in Hsuehshan Tunnel, Taiwan: size distribution, fingerprinting metal ratio, and emission factor

NASA Astrophysics Data System (ADS)

Lin, Y.-C.; Tsai, C.-J.; Wu, Y.-C.; Zhang, R.; Chi, K.-H.; Huang, Y.-T.; Lin, S.-H.; Hsu, S.-C.

2014-05-01

Traffic emissions are a significant source of airborne particulate matter (PM) in ambient environments. These emissions contain high abundance of toxic metals and thus pose adverse effects on human health. Size-fractionated aerosol samples were collected from May to September 2013 by using micro-orifice uniform deposited impactor (MOUDI). Sample collection was conducted simultaneously at the inlet and outlet sites of Hsuehshan Tunnel in northern Taiwan, which is the second longest freeway tunnel (12.9 km) in Asia. Such endeavor aims to characterize the chemical constituents, size distributions, and fingerprinting ratios, as well as the emission factors of particulate metals emitted by vehicle fleets. A total of 36 metals in size-resolved aerosols were determined through inductively coupled plasma mass spectrometry. Three major groups, namely, tailpipe emissions (Zn, Pb, and V), wear debris (Cu, Cd, Fe, Ga, Mn, Mo, Sb, and Sn), and resuspended dust (Ca, Mg, K, and Rb), of airborne PM metals were categorized on the basis of the results of enrichment factor, correlation matrix, and principal component analysis. Size distributions of wear-originated metals resembled the pattern of crustal elements, which were predominated by super-micron particulates (PM1-10). By contrast, tailpipe exhaust elements such as Zn, Pb, and V were distributed mainly in submicron particles. By employing Cu as a tracer of wear abrasion, several inter-metal ratios, including Fe/Cu (14), Ba/Cu (1.05), Sb/Cu (0.16), Sn/Cu (0.10), and Ga/Cu (0.03), served as fingerprints for wear debris. Emission factor of PM10 mass was estimated to be 7.7 mg vkm-1. The metal emissions were mostly predominated in super-micron particles (PM1-10). Finally, factors that possibly affect particulate metal emissions inside Hsuehshan Tunnel are discussed.

Measurements of labile Cd, Cu, Ni, Pb, and Zn levels at a northeastern Brazilian coastal area under the influence of oil production with diffusive gradients in thin films technique (DGT).

PubMed

de Souza, João M; Menegário, Amauri A; de Araújo Júnior, Marcus A G; Francioni, Eleine

2014-12-01

In this work, the ability of the diffusive gradients in thin films technique (DGT) was evaluated for monitoring the concentrations, and estimating the availability, of metals at a northeastern Brazilian coastal area under the influence of oil production. Three sites with an average distance between 0m (EM-1), 100 m (EM-2), and 1,000 m (EM-3) of a submarine outfall-I (Guamaré-RN, Brazil) and another site (GA-1) with an average distance of 12,000 m east of Outfall I, near the city of Galinhos, were studied. DGT units were deployed at the same sites in three campaigns from July, 2010 to June, 2011. Effects on the accuracy of analytical results regarding the deployment time, gel porosity, and thickness were evaluated. There was no difference between the measurements obtained with two sets of DGT devices, those assembled with open or restrictive pore gel, respectively, showing that organic metallic species are not present near the submarine outlet. After 21 day deployments in a region (near Submarine Outfall I) that receives produced waters that have been treated, there was evidence of biofilm formation on DGT membranes. However, it was demonstrated that the biofilm interference with DGT measurements was negligible. Data found in this work show that total concentrations of Cd, Cu, Pb, Ni, and Zn in seawater samples collected at sites GA-1 and EM-1 in two campaigns were below 0.33, 1.67, 0.47, 0.70, 2.86 ng mL(-1) respectively. For the first time, labile levels of Cd, Cu, Pb, Ni, and Zn in an area under the influence of oil production were determined. DGT measurements allowed the verification of the effects of temporal variation on levels of Zn and Ni. There were no effects of spatial variations on levels of Cd, Cu, Ni, Pb, and Zn at the four studied sites, suggesting no contamination of these metals at the northeastern Brazilian coastal area investigated in this work. Copyright © 2014. Published by Elsevier B.V.

Wet Pretreatment-Induced Modification of Cu(In,Ga)Se2/Cd-Free ZnTiO Buffer Interface.

PubMed

Hwang, Suhwan; Larina, Liudmila; Lee, Hojin; Kim, Suncheul; Choi, Kyoung Soon; Jeon, Cheolho; Ahn, Byung Tae; Shin, Byungha

2018-06-20

We report a novel Cd-free ZnTiO buffer layer deposited by atomic layer deposition for Cu(In,Ga)Se 2 (CIGS) solar cells. Wet pretreatments of the CIGS absorbers with NH 4 OH, H 2 O, and/or aqueous solution of Cd 2+ ions were explored to improve the quality of the CIGS/ZnTiO interface, and their effects on the chemical state of the absorber and the final performance of Cd-free CIGS devices were investigated. X-ray photoelectron spectroscopy (XPS) analysis revealed that the aqueous solution etched away sodium compounds accumulated on the CIGS surface, which was found to be detrimental for solar cell operation. Wet treatment with NH 4 OH solution led to a reduced photocurrent, which was attributed to the thinning (or removal) of an ordered vacancy compound (OVC) layer on the CIGS surface as evidenced by an increased Cu XPS peak intensity after the NH 4 OH treatment. However, the addition of Cd 2+ ions to the NH 4 OH aqueous solution suppressed the etching of the OVC by NH 4 OH, explaining why such a negative effect of NH 4 OH is not present in the conventional chemical bath deposition of CdS. The band alignment at the CIGS/ZnTiO interface was quantified using XPS depth profile measurements. A small cliff-like conduction band offset of -0.11 eV was identified at the interface, which indicates room for further improvement of efficiency of the CIGS/ZnTiO solar cells once the band alignment is altered to a slight spike by inserting a passivation layer with a higher conduction band edge than ZnTiO. Combination of the small cliff conduction band offset at the interface, removal of the Na compound via water, and surface doping by Cd ions allowed the application of ZnTiO buffer to CIGS treated with Cd solutions, exhibiting an efficiency of 80% compared to that of a reference CIGS solar cell treated with the CdS.

Electron-beam-induced current at absorber back surfaces of Cu(In,Ga)Se{sub 2} thin-film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kavalakkatt, J.; Abou-Ras, D., E-mail: daniel.abou-ras@helmholtz-berlin.de; Nichterwitz, M.

2014-01-07

The present work reports on investigations of the influence of the microstructure on electronic properties of Cu(In,Ga)Se{sub 2} (CIGSe) thin-film solar cells. For this purpose, ZnO/CdS/CIGSe stacks of these solar cells were lifted off the Mo-coated glass substrates. The exposed CIGSe backsides of these stacks were investigated by means of electron-beam-induced current (EBIC) and cathodoluminescence (CL) measurements as well as by electron backscattered diffraction (EBSD). EBIC and CL profiles across grain boundaries (GBs), which were identified by EBSD, do not show any significant changes at Σ3 GBs. Across non-Σ3 GBs, on the other hand, the CL signals exhibit local minimamore » with varying peak values, while by means of EBIC, decreased and also increased short-circuit current values are measured. Overall, EBIC and CL signals change across non-Σ3 GBs always differently. This complex situation was found in various CIGSe thin films with different [Ga]/([In]+[Ga]) and [Cu]/([In]+[Ga]) ratios. A part of the EBIC profiles exhibiting reduced signals across non-Σ3 GBs can be approximated by a simple model based on diffusion of generated charge carriers to the GBs.« less

Facile Growth of Cu2ZnSnS4 Thin-Film by One-Step Pulsed Hybrid Electrophoretic and Electroplating Deposition

PubMed Central

Tsai, Hung-Wei; Chen, Chia-Wei; Thomas, Stuart R.; Hsu, Cheng-Hung; Tsai, Wen-Chi; Chen, Yu-Ze; Wang, Yi-Chung; Wang, Zhiming M.; Hong, Hwen-Fen; Chueh, Yu-Lun

2016-01-01

The use of costly and rare metals such as indium and gallium in Cu(In,Ga)Se2 (CIGS) based solar cells has motivated research into the use of Cu2ZnSnS4 (CZTS) as a suitable replacement due to its non-toxicity, abundance of compositional elements and excellent optical properties (1.5 eV direct band gap and absorption coefficient of ~104 cm−1). In this study, we demonstrate a one-step pulsed hybrid electrodeposition method (PHED), which combines electrophoretic and electroplating deposition to deposit uniform CZTS thin-films. Through careful analysis and optimization, we are able to demonstrate CZTS solar cells with the VOC, JSC, FF and η of 350 mV, 3.90 mA/cm2, 0.43 and 0.59%, respectively. PMID:26902556

Equilibrium, Kinetic and Structural Properties of Gallium(III) and Some Divalent Metal Complexes Formed with the New DATAm and DATA5m Ligands.

PubMed

Farkas, Edit; Nagel, Johannes; Waldron, Bradley P; Parker, David; Tóth, Imre; Brücher, Ernő; Rösch, Frank; Baranyai, Zsolt

2017-08-01

The development of 68 Ge/ 68 Ga generators has made the positron-emitting 68 Ga isotope widely accessible and raised interest in new chelate complexes of Ga 3+ . The hexadentate 1,4-di(acetate)-6-methyl[amino(methyl)acetate]perhydro-1,4-diazepane (DATA m ) ligand and its bifunctional analogue, 1,4-di(acetate)-6-pentanoic acid[amino(methyl)acetate]perhydro-1,4-diazepane (DATA 5m ), rapidly form complexes with 68 Ga in high radiochemical yield. The stability constants of DATA m and DATA 5m complexes formed with Ga 3+ , Zn 2+ , Cu 2+ , Mn 2+ and Ca 2+ have been determined by using pH potentiometry, spectrophotometry (Cu 2+ ) and 1 H and 71 Ga NMR spectroscopy (Ga 3+ ). The stability constants of Ga(DATA m ) and Ga(DATA 5m ) complexes are slightly higher than those of Ga(AAZTA). The species distribution calculations indicated the predominance of Ga(L)OH mixed-hydroxo complexes at physiological pH. The 1 H and 71 Ga NMR spectroscopy studies provided information about the coordinated functional groups of ligands and on the kinetics of exchange between the Ga(L) and Ga(L)OH complexes. The transmetalation reactions between the Ga(L) complexes and Cu 2+ citrate (6

20% Efficient Zn0.9Mg0.1O:Al/Zn0.8Mg0.2O/Cu(In,Ga)(S,Se)2 Solar Cell Prepared by All-Dry Process through a Combination of Heat-Light-Soaking and Light-Soaking Processes.

PubMed

Chantana, Jakapan; Kato, Takuya; Sugimoto, Hiroki; Minemoto, Takashi

2018-04-04

Development of Cd-free Cu(In,Ga)(S,Se) 2 (CIGSSe)-based thin-film solar cells fabricated by an all-dry process is intriguing to minimize optical loss at a wavelength shorter than 520 nm owing to absorption of the CdS buffer layer and to be easily integrated into an in-line process for cost reduction. Cd-free CIGSSe solar cells are therefore prepared by the all-dry process with a structure of Zn 0.9 Mg 0.1 O:Al/Zn 0.8 Mg 0.2 O/CIGSSe/Mo/glass. It is demonstrated that Zn 0.8 Mg 0.2 O and Zn 0.9 Mg 0.1 O:Al are appropriate as buffer and transparent conductive oxide layers with large optical band gap energy values of 3.75 and 3.80 eV, respectively. The conversion efficiency (η) of the Cd-free CIGSSe solar cell without K-treatment is consequently increased to 18.1%. To further increase the η, the Cd-free CIGSSe solar cell with K-treatment is next fabricated and followed by posttreatment called the heat-light-soaking (HLS) + light-soaking (LS) process, including HLS at 110 °C followed by LS under AM 1.5G illumination. It is disclosed that the HLS + LS process gives rise to not only the enhancement of carrier density but also the decrease in the carrier recombination rate at the buffer/absorber interface. Ultimately, the η of the Cd-free CIGSSe solar cell with K-treatment prepared by the all-dry process is enhanced to the level of 20.0%.

Uraniferous bitumen nodules in the Talvivaara Ni-Zn-Cu-Co deposit (Finland): influence of metamorphism on uranium mineralization in black shales

NASA Astrophysics Data System (ADS)

Lecomte, Andreï; Cathelineau, Michel; Deloule, Etienne; Brouand, Marc; Peiffert, Chantal; Loukola-Ruskeeniemi, Kirsti; Pohjolainen, Esa; Lahtinen, Hannu

2014-04-01

In the central part of the Fennoscandian Shield, the Talvivaara Ni-Zn-Cu-Co deposit, hosted by Palaeoproterozoic metamorphosed black schists, contains low uranium concentrations ranging from 10 to 30 ppm. The Talvivaara black schists were deposited 2.0-1.9 Ga ago and underwent subsequent metamorphism during the 1.9-1.79 Ga Svecofennian orogeny. Anhedral uraninite crystals rimmed by bitumen constitute the main host of uranium. U-Pb secondary ion mass spectrometry dating indicates that uraninite crystals were formed between 1,878 ± 17 and 1,871 ± 43 Ma, during peak metamorphism. Rare earth element patterns and high Th content (average 6.38 wt%) in disseminated uraninite crystals indicate that U was concentrated during high temperature metamorphism (>400 °C). The formation of bitumen rims around uraninite may be explained by two distinct scenarios: (a) a transport of U coincident with the migration of hydrocarbons or (b) post-metamorphic formation of bitumen rims, through radiolytic polymerization of gaseous hydrocarbons at the contact with uraninite.

Anode materials for lithium ion batteries

DOEpatents

Abouimrane, Ali; Amine, Khalil

2017-04-11

An electrochemical device includes a composite material of general Formula (1-x)J-(x)Q wherein: J is a metal carbon alloy of formula Sn.sub.zSi.sub.z'Met.sub.wMet'.sub.w'C.sub.t; Q is a metal oxide of formula A.sub..gamma.M.sub..alpha.M'.sub..alpha.'O.sub..beta.; and wherein: A is Li, Na, or K; M and M' are individually Ge, Mo, Al, Ga, As, Sb, Te, Ti, Ta, Zr, Ca, Mg, Sr, Ba, Li, Na, K, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Rt, Ru or Cd; Met and Met' are individually Ge, Mo, Al, Ga, As, Sb, Te, Ti, Ta, Zr, Ca, Mg, Sr, Ba, Li, Na, K, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Nb, Rt, Ru or Cd; 0

Fabrication of solution processed 3D nanostructured CuInGaS₂ thin film solar cells.

PubMed

Chu, Van Ben; Cho, Jin Woo; Park, Se Jin; Hwang, Yun Jeong; Park, Hoo Keun; Do, Young Rag; Min, Byoung Koun

2014-03-28

In this study we demonstrate the fabrication of CuInGaS₂ (CIGS) thin film solar cells with a three-dimensional (3D) nanostructure based on indium tin oxide (ITO) nanorod films and precursor solutions (Cu, In and Ga nitrates in alcohol). To obtain solution processed 3D nanostructured CIGS thin film solar cells, two different precursor solutions were applied to complete gap filling in ITO nanorods and achieve the desirable absorber film thickness. Specifically, a coating of precursor solution without polymer binder material was first applied to fill the gap between ITO nanorods followed by deposition of the second precursor solution in the presence of a binder to generate an absorber film thickness of ∼1.3 μm. A solar cell device with a (Al, Ni)/AZO/i-ZnO/CdS/CIGS/ITO nanorod/glass structure was constructed using the CIGS film, and the highest power conversion efficiency was measured to be ∼6.3% at standard irradiation conditions, which was 22.5% higher than the planar type of CIGS solar cell on ITO substrate fabricated using the same precursor solutions.

Room temperature electroluminescence from n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction device grown by PLD

NASA Astrophysics Data System (ADS)

Zhang, Lichun; Li, Qingshan; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2014-05-01

The n-ZnO:Ga/ p-GaN:Mg and n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated by the pulsed laser deposition (PLD) technique. The blue electroluminescence (EL) of the n-ZnO:Ga/ p-GaN:Mg heterojunction LEDs is emitted mainly from the p-GaN layer instead of the n-ZnO:Ga layer, for the reason that the electron injection from n-ZnO:Ga prevailed over the hole injection from p-GaN:Mg due to the higher carrier concentration and carrier mobility in n-ZnO:Ga. On the other hand, the n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction LEDs exhibited dominant ultraviolet-blue emission. The reason for this difference is attributed to the inserted undoped i-ZnO layer between n-ZnO:Ga and p-GaN:Mg, in which the holes from p-GaN:Mg and the electrons from n-ZnO:Ga are recombined.

Nuclear Data Sheets for A = 61

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuber, Kazimierz; Singh, Balraj

2015-03-15

The evaluated spectroscopic data are presented for known nuclides of mass 61 (Sc,Ti,V,Cr,Mn,Fe,Co,Ni, Cu,Zn,Ga,Ge). Excited-state data are nonexistent for {sup 61}Sc, {sup 61}Ti, {sup 61}V, and {sup 61}Ge. Significant amounts of new data have been added since the previous NDS evaluation of A=61 nuclides (1999Bh04). {sup 61}Sc nuclide is now experimentally known, but without any knowledge of its half-life. The ground state half-lives of {sup 61}Ti and {sup 61}V are now determined. Excited-state data have become available for {sup 61}Cr, {sup 61}Mn and {sup 61}Ga, while for {sup 61}Ge, five excited states were erroneously assigned in the previous evaluation, thesemore » have been omitted here. Improved and extensive high-spin excitations are available for {sup 61}Fe, {sup 61}Cu and {sup 61}Zn, including several new superdeformed structures in {sup 61}Cu and {sup 61}Zn. Thermal neutron capture γ-ray data are available in detail from 2004Ra23. The radioactive decay schemes of {sup 61}Sc and {sup 61}Ti are not known, while those for {sup 61}V, {sup 61}Fe and {sup 61}Ge are poorly known. This work benefited from the earlier full evaluations of A=61 published by 1999Bh04, 1983Ek01 and 1975Au05 and the one published in an ‘update’ mode by 1992Zh31. The data and conclusions presented in the current work supersede those in all the previous evaluations.« less

Locating the electrical junctions in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 solar cells by scanning capacitance spectroscopy

DOE PAGES

Xiao, Chuanxiao; Jiang, Chun -Sheng; Moutinho, Helio; ...

2016-08-09

Here, we determined the electrical junction (EJ) locations in Cu(In,Ga)Se 2 (CIGS) and Cu 2ZnSnSe 4 (CZTS) solar cells with ~20-nm accuracy by developing scanning capacitance spectroscopy (SCS) applicable to the thin-film devices. Cross-sectional sample preparation for the SCS measurement was developed by high-energy ion milling at room temperature for polishing the cross section to make it flat, followed by low-energy ion milling at liquid nitrogen temperature for removing the damaged layer and subsequent annealing for growing a native oxide layer. The SCS shows distinct p-type, transitional, and n-type spectra across the devices, and the spectral features change rapidly withmore » location in the depletion region, which results in determining the EJ with ~20-nm resolution. We found an n-type CIGS in the region next to the CIGS/CdS interface; thus, the cell is a homojunction. The EJ is ~40 nm from the interface on the CIGS side. In contrast, such an n-type CZTS was not found in the CZTS/CdS cells. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. Our results of unambiguously determination of the junction locations contribute significantly to understanding the large open-circuit voltage difference between CIGS and CZTS.« less

A comparative study on charge carrier recombination across the junction region of Cu{sub 2}ZnSn(S,Se){sub 4} and Cu(In,Ga)Se{sub 2} thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Halim, Mohammad Abdul, E-mail: halimtsukuba2012@gmail.com; Islam, Muhammad Monirul; Luo, Xianjia

A comparative study with focusing on carrier recombination properties in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) and the CuInGaSe{sub 2} (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decaymore » time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent V{sub OC} suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.« less

Locating the electrical junctions in Cu(In,Ga)Se 2 and Cu 2ZnSnSe 4 solar cells by scanning capacitance spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Chuanxiao; Jiang, Chun -Sheng; Moutinho, Helio

Here, we determined the electrical junction (EJ) locations in Cu(In,Ga)Se 2 (CIGS) and Cu 2ZnSnSe 4 (CZTS) solar cells with ~20-nm accuracy by developing scanning capacitance spectroscopy (SCS) applicable to the thin-film devices. Cross-sectional sample preparation for the SCS measurement was developed by high-energy ion milling at room temperature for polishing the cross section to make it flat, followed by low-energy ion milling at liquid nitrogen temperature for removing the damaged layer and subsequent annealing for growing a native oxide layer. The SCS shows distinct p-type, transitional, and n-type spectra across the devices, and the spectral features change rapidly withmore » location in the depletion region, which results in determining the EJ with ~20-nm resolution. We found an n-type CIGS in the region next to the CIGS/CdS interface; thus, the cell is a homojunction. The EJ is ~40 nm from the interface on the CIGS side. In contrast, such an n-type CZTS was not found in the CZTS/CdS cells. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. Our results of unambiguously determination of the junction locations contribute significantly to understanding the large open-circuit voltage difference between CIGS and CZTS.« less

Effects on external quantum efficiency of electrochemically constructed n-ZnO/p-Cu2O photovoltaic device by annealing

NASA Astrophysics Data System (ADS)

Khoo, Pei Loon; Kikkawa, Yuuki; Shinagawa, Tsutomu; Izaki, Masanobu

2017-07-01

Cuprous oxide (Cu2O), a terrestrial abundant, low cost, nontoxic, intrinsically p-type oxide semiconductor with bandgap energy of about 2eV, has recently received increasing attention as a light absorbing layer in solar cells. However, the performances of electrochemically constructed Cu2O solar devices are poor compared to the theoretical power conversion efficiency. This research was conducted focusing on the EQE performance, which is closely related to the short circuit current of a solar device. ZnO/Cu2O-PV-devices were constructed electrochemically with 3-electrode cell on Ga:ZnO/SLG substrates; ZnO layers were deposited from an aqueous solution of 8 mmolL-1 zinc nitrate hexahydrate at 63°C, 0.01 Coulomb cm-2, and -0.8V, while Cu2O layers were deposited from aqueous solution containing 0.4 molL-1 copper (II) acetate monohydrate (pH12.5), at 40°C, 1.5 Coulomb cm-2, and -0.4V. Devices were then annealed under different temperatures of 150°C, 200°C, 250°C, and 300°C for 60 minutes with a Rapid Thermal Anneal furnace (RTA). The EQE of the devices were measured with a spectral sensitivity device and compared to the non-annealed device. Further studies were made such as morphology observation of the films by FE-SEM and measurements of X-ray diffraction patterns. Annealed samples showed improved maximum EQE at 150-200°C of annealing, indicating that EQE above 90% can be achieved, proving the validity of EQE improvement via low temperature annealing method for thin film Cu2O photovoltaic devices.

Local charge-density change and superconductivity: A positron study

NASA Astrophysics Data System (ADS)

Jean, Y. C.; Sundar, C. S.; Bharathi, A.; Kyle, J.; Nakanishi, H.; Tseng, P. K.; Hor, P. H.; Meng, R. L.; Huang, Z. J.; Chu, C. W.; Wang, Z. Z.; Turchi, P. E. A.; Howell, R. H.; Wachs, A. L.; Fluss, M. J.

1990-03-01

The temperature dependence between 10 and 300 K of the positron lifetime was measured in the high-temperature superconductors YBA2(Cu1-xMx)3O6+δ, where M=Zn and Ga with x=0.0 to 0.07 and δ>0.8. In the undoped and Ga-doped samples, the positron lifetime in the Bloch state, τb, was observed to decrease below Tc. In the Zn-doped samples, a dramatic x-dependent temperature variation of τb was observed: from a decrease of Tb below Tc for x=0.01 to an increase of τb for x>0.02. These new experimental results are interpreted in terms of a change in the local charge density of high-Tc oxides associated with the superconducting transition.

Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction.

PubMed

Rajagopal Reddy, V; Janardhanam, V; Won, Jonghan; Choi, Chel-Jong

2017-08-01

An Au/Cu 2 ZnSnS 4 (CZTS)/n-GaN heterojunction (HJ) is fabricated with a CZTS interlayer and probed its chemical states, structural, electrical and frequency-dependent characteristics by XPS, TEM, I-V and C-V measurements. XPS and TEM results confirmed that the CZTS films are formed on the n-GaN surface. The band gap of deposited CZTS film is found to be 1.55eV. The electrical properties of HJ correlated with the Au/n-GaN Schottky junction (SJ). The Au/CZTS/n-GaN HJ reveals a good rectification nature with high barrier height (0.82eV) compared to the Au/n-GaN SJ (0.69eV), which suggests the barrier height is influenced by the CZTS interlayer. The barrier height values assessed by I-V, Cheung's and Norde functions are closely matched with one other, thus the methods used here are reliable and valid. The extracted interface state density (N SS ) of Au/CZTS/n-GaN HJ is lower compared to the Au/n-GaN SJ that suggests the CZTS interlayer plays an important role in the reduction of N SS . Moreover, the capacitance-frequency (C-f) and conductance-frequency (G-f) characteristics of SJ and HJ are measured in the range of 1kHz-1MHz, and found that the capacitance and conductance strappingly dependent on frequency. It is found that the N SS estimated from C-f and G-f characteristics is lower compared to those estimated from I-V characteristics. Analysis confirmed that Poole-Frenkel emission dominates the reverse leakage current in both SJ and HJ, probably related to the structural defects and trap levels in the CZTS interlayer. Copyright © 2017 Elsevier Inc. All rights reserved.

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mezdrogina, M. M., E-mail: margaret.m@mail.ioffe.ru; Krivolapchuk, V. V., E-mail: vlad.krivol@mail.ioffe.ru; Feoktistov, N. A.

2008-07-15

Luminescence intensity of heterostructures based on n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) is higher by more than an order of magnitude than the corresponding intensity of separate n-ZnO, p-GaN:(Er + Zn), and AlGaN:(Er + Zn) layers. Most likely, this phenomenon is due to the effective tunneling recombination of charge carriers caused by a decrease in the concentration of the nonradiative recombination centers located between the n-ZnO/p-GaN:(Er + Zn) and n-ZnO/AlGaN:(Er + Zn) layers.

Thin film solar cells: research in an industrial perspective.

PubMed

Edoff, Marika

2012-01-01

Electricity generation by photovoltaic conversion of sunlight is a technology in strong growth. The thin film technology is taking market share from the dominant silicon wafer technology. In this article, the market for photovoltaics is reviewed, the concept of photovoltaic solar energy conversion is discussed and more details are given about the present technological limitations of thin film solar cell technology. Special emphasis is given for solar cells which employ Cu(In,Ga)Se(2) and Cu(2)ZnSn(S,Se)(4) as the sunlight-absorbing layer.

Acute and subacute response of iron, zinc, copper and selenium in pigs experimentally infected with Actinobacillus pleuropneumoniae.

PubMed

Humann-Ziehank, Esther; Menzel, Anne; Roehrig, Petra; Schwert, Barbara; Ganter, Martin; Hennig-Pauka, Isabel

2014-10-01

This study was performed to characterise the response of iron (Fe), zinc (Zn), copper (Cu) and selenium (Se) in bacterial-induced porcine acute phase reaction (APR). Twenty piglets were challenged by aerosolic infection with Actinobacillus pleuropneumoniae (A.pp.) serotype 2, ten piglets serving as controls. Blood sampling was done initially and at day 4 and 21 after infection, collection of liver tissue was done at day 21 (autopsy). A.pp.-infection caused fever and respiratory symptoms. APR at day 4 after infection was marked by an increase in total white blood cells, granulocytes and monocytes in whole blood samples and an increase in globulin/albumin ratio (G/A), α2-globulins, C-reactive protein, haptoglobin, ceruloplasmin (Cp), Cu and Se in serum. Concurrently, there was a decrease in haemoglobin (Hb) and packed cell volume (PCV) in whole blood as well as a decrease in albumin, transferrin, total iron binding capacity and Fe in serum and Zn in plasma. The subacute stage at day 21 was characterised by progressively increased concentrations of G/A, β-globulins and γ-globulins reflecting the specific immune reaction. Hb and PCV showed further decreases, all other parameters returned to the initial concentrations. Glutathione peroxidase activity in plasma and liver tissue remained unaffected by A.pp.-infection. The liver concentration (day 21) of Zn was found to be higher, that of Se was lower in the A.pp.-group, whereas hepatic concentrations of Cu and Fe were not affected by A.pp.-infection. In summary, the acute and subacute stages of A.pp.-infection were accurately characterised by the APR-related parameters. Se was only marginally affected by the A.pp.-infection. The elevated plasma Cu concentration may be a side effect of the transient hepatic induction of Cp synthesis. Zn responded, being distinctly reduced in plasma and probably having been sequestered in the liver tissue. Reduction in serum Fe can be regarded as an unspecific defence mechanism in A.pp.-infection to withdraw Fe from bacterial acquisition systems.

Fabrication of CuInS2/ZnS quantum dots-based white light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Hsiao, Chih-Chun; Su, Yu-Sheng; Chung, Shu-Ru

2017-09-01

Among solid-state lighting technology, phosphor-converted white light-emitting diodes (pc-WLEDs) are excellent candidates to replace incandescent lamps for their merit of high energy conservation, long lifetime, high luminous efficiency as well as polarized emissions. Semiconductor quantum dots (QDs) are emerging color tunable emissive light converters. They have shown significant promise as light emitters, as solar cells, and in biological imaging. It has been demonstrated that the pc-WLED devices integrated with red emissive ZnCdSe QDs show improved color rendering index of device. However, cadmium-based QDs have limited future owing to the well-known toxicity. Recently, non-cadmium luminescence materials, i.e. CuInS2-based QDs, are investigated as desirable low toxic alternatives. Particularly, CuInS2-based QDs exhibit very broad emissions spectra with full width at half maximum (FWHM) of 100-120 nm, large Stokes shifts of 200 300 meV and finely-tunable emissions. In order to adjust emission wavelengths and improved quantum yield (QY), CuInS2/ZnS (CIS/ZnS) core/shell structure was introduced. Therefore, CIS/ZnS QDs have been extensively investigated and be used as color converter in solid-state lighting. Synthesis and application of CuInS2/ZnS core/shell QDs are conducted using a hot injection route. CIS/ZnS core/shell QDs with molar ratio of Cu:In equal to 1:4 are prepared. For WLED fabrication, the CIS/ZnS QD is dispersed in toluene first, and then it is blended with transparent acrylic-based UV resin. Subsequently, the commercial green-emitting Lu3Al5O12: Ce3+ (LuAG) phosphors are mixed with QDs-resin mixture. After that, the QDs-phosphors-resin mixtures are put in the oven at 140 °C for 1 h to evaporate the toluene. Subsequently, the homogeneous QDs-phosphors-resin mixture is dropped on the top of a blue LED chip (InGaN). Then, the device is cured by 400 W UV light to form WLED. The emission wavelength of CIS/ZnS QD exhibits yellow region of 552 nm with QY of 76 %, and with relatively broad bandwidth of 86 nm. The structure of CIS/ZnS belongs to chalcopyrite phase and its average particle size is 3.2 nm. The luminous efficacy, color rendering index (CRI), correlated color temperature (CCT), and CIE chromaticity coordinate of WLED is 47 lm/W, 89, 5661 K, and (0.33, 0.29), respectively.

The photocatalytic properties of hollow (GaN)1-x(ZnO)x composite nanofibers synthesized by electrospinning

NASA Astrophysics Data System (ADS)

Wang, Ding; Zhang, Minglu; Zhuang, Huaijuan; Chen, Xu; Wang, Xianying; Zheng, Xuejun; Yang, Junhe

2017-02-01

(GaN)1-x(ZnO)x composite nanofibers with hollow structure were prepared by initial electrospinning, and the subsequent calcination and nitridation. The structure and morphology characteristics of samples were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS) and transmission electron microscopy (TEM). The characterization results showed the phase transition from ZnGa2O4 to (GaN)1-x(ZnO)x solid-solution under ammonia atmosphere. The preparation conditions were explored and the optimum nitridation temperature and holding time are 750 °C and 2 h, respectively. The photocatalytic properties of (GaN)1-x(ZnO)x with different Ga:Zn atomic ratios were investigated by degrading Rhodamine B under the visible light irradiation. The photocatalytic activity sequence is (GaN)1-x(ZnO)x (Ga:Zn = 1:2) > (GaN)1-x(ZnO)x (Ga:Zn = 1:3) > ZnO nanofibers > (GaN)1-x(ZnO)x (Ga:Zn = 1:4) > (GaN)1-x(ZnO)x (Ga:Zn = 1:1). The photocatalytic mechanism of the (GaN)1-x(ZnO)x hollow nanofibers was further studied by UV-vis diffuse reflectance spectra. The excellent photocatalytic performance of (GaN)1-x(ZnO)x hollow nanofibers was attributed to the narrow band gap and high surface area of porous nanofibers with hollow structure.

First-principles study of defect formation in a photovoltaic semiconductor Cu2ZnGeSe4

NASA Astrophysics Data System (ADS)

Nishihara, Hironori; Maeda, Tsuyoshi; Wada, Takahiro

2018-02-01

The formation energies of neutral Cu, Zn, Ge, and Se vacancies in kesterite-type Cu2ZnGeSe4 were evaluated by first-principles pseudopotential calculations using plane-wave basis functions. The calculations were performed at typical points in Cu-(Zn1/2Ge1/2)-Se and Cu3Se2-ZnSe-GeSe2 pseudoternary phase diagrams for Cu2ZnGeSe4. The results were compared with those for Cu2ZnSnSe4, Cu2ZnGeS4, and Cu2ZnSnS4 calculated using the same version of the CASTEP program code. The results indicate that Cu vacancies are easily formed in Cu2ZnGeSe4 under the Cu-poor condition as in the above compounds and CuInSe2, suggesting that Cu2ZnGeSe4 is also a preferable p-type absorber material for thin-film solar cells. The formation energies of possible antisite defects, such as CuZn and CuGe, and of possible complex defects, such as CuZn+ZnCu, were also calculated and compared within the above materials. The antisite defect of CuZn, which has the smallest formation energy within the possible defects, is concluded to be the most hardly formed in Cu2ZnGeSe4 among the compounds.

Trace elements in tourmalines from massive sulfide deposits and tourmalinites: Geochemical controls and exploration applications

USGS Publications Warehouse

Griffin, W.L.; Slack, J.F.; Ramsden, A.R.; Win, T.T.; Ryan, C.G.

1996-01-01

Trace element contents of tourmalines from massive sulfide deposits and tourmalinites have been determined in situ by proton microprobe; >390 analyses were acquired from 32 polished thin sections. Concentrations of trace elements in the tourmalines vary widely, from <40 to 3,770 ppm Mn, <4 to 1,800 ppm Ni, <2 to 1,430 ppm Cu, <9 to 4,160 ppm Zn, 3 to 305 ppm Ga, <6 to 1,345 ppm Sr, <10 to 745 ppm Sn, <49 to 510 ppm Ba, and <3 to 4,115 ppm Pb. Individual grains and growth zones are relatively homogeneous, suggesting that these trace elements are contained within the crystal structure of the tourmaline, and are not present in inclusions. The highest base metal contents are in ore-related tourmaline samples from Kidd Creek (Ontario), Broken Hill (Australia), and Sazare (Japan). Tourmaline data from these and many other massive sulfide deposits cluster by sample and display broadly linear trends on Zn vs. Fe plots, suggesting chemical control by temperature and hydrothermal and/or metamorphic fluid-mineral equilibria. Significant Ni occurs only in samples from the Kidd Creek Cu-Zn-Pb-Ag deposit, which is associated with a large footwall ultramafic body. An overall antithetic relationship between Zn and Ni probably reflects fluid source controls. Mn is correlated with Fe in tourmalines from barren associations, and possibly in some tourmalines associated with sulfide vein deposits. Sn increases systematically with Fe content irrespective of association; the highest values are found in schorls from granites. Other trace elements are generally uncorrelated with major element concentrations (e.g., Sr-Ca). Base metal proportions in the tourmalines show systematic patterns on ternary Cu-Pb-Zn diagrams that correlate well with the major commodity metals in the associated massive sulfide deposits. For example, data for tourmalines from Cu-Zn deposits (e.g., Ming mine, Newfoundland) fall mainly on the Cu-Zn join, whereas those from Pb-Zn deposits (e.g., Broken Hill, Australia) plot on the Pb-Zn join; no data fall on the Cu-Pb join, consistent with the lack of this metal association in massive sulfide deposits. The systematic relationship between base metal proportions in the tourmalines and the metallogeny of the host massive sulfide deposits indicates that the analyzed tourmalines retain a strong chemical signature of their original hydrothermal formation, in spite of variable metamorphic recrystallization. Such trace element patterns in massive sulfide tourmalines may be useful in mineral exploration, specifically for the evaluation of tourmaline concentrations in rocks, soils, and stream sediments.

Modeling and Optimization of Sub-Wavelength Grating Nanostructures on Cu(In,Ga)Se2 Solar Cell

NASA Astrophysics Data System (ADS)

Kuo, Shou-Yi; Hsieh, Ming-Yang; Lai, Fang-I.; Liao, Yu-Kuang; Kao, Ming-Hsuan; Kuo, Hao-Chung

2012-10-01

In this study, an optical simulation of Cu(In,Ga)Se2 (CIGS) solar cells by the rigorous coupled-wave analysis (RCWA) method is carried out to investigate the effects of surface morphology on the light absorption and power conversion efficiencies. Various sub-wavelength grating (SWG) nanostructures of periodic ZnO:Al (AZO) on CIGS solar cells were discussed in detail. SWG nanostructures were used as efficient antireflection layers. From the simulation results, AZO structures with nipple arrays effectively suppress the Fresnel reflection compared with nanorod- and cone-shaped AZO structures. The optimized reflectance decreased from 8.44 to 3.02% and the efficiency increased from 14.92 to 16.11% accordingly. The remarkable enhancement in light harvesting is attributed to the gradient refractive index profile between the AZO nanostructures and air.

Measurement of excitation functions in alpha induced reactions on natCu

NASA Astrophysics Data System (ADS)

Shahid, Muhammad; Kim, Kwangsoo; Kim, Guinyun; Zaman, Muhammad; Nadeem, Muhammad

2015-09-01

The excitation functions of 66,67,68Ga, 62,63,65Zn, 61,64Cu, and 58,60Co radionuclides in the natCu(α, x) reaction were measured in the energy range from 15 to 42 MeV by using a stacked-foil activation method at the MC-50 cyclotron of the Korean Institute of Radiological and Medical Sciences. The measured results were compared with the literature data as well as the theoretical values obtained from the TENDL-2013 and TENDL-2014 libraries based on the TALYS-1.6 code. The integral yields for thick targets of the produced radionuclides were also determined from the measured excitation functions and the stopping power of natural copper.

Cuprian fraipontite and sauconite from the Defiance-Silver Bill mines, Gleeson, Arizona.

USGS Publications Warehouse

Foord, E.E.; Taggart, J.E.; Conklin, N.M.

1983-01-01

XRD studies have shown the fine-grained, light blue-green mineral previously identified as turquoise or chrysocolla to be the rare species fraipontite + or - admixed sauconite. Composite microprobe and XRF analyses gave SiO2 24.8, Al2O3 17.3, CaO 0.34, CuO 5.2, ZnO 40.95, H2O (ign. loss, 900oC) 12.8, = 101.39, yielding the formula (Zn1.84Al0.77Cu0.24box 0.13- Ca0.02)3.00(Si1.51Al0.49)2.00O5(OH)4. Semiquantitative emission spectrographic analysis showed Fe 0.007, Mg 0.01, Ca 0.07, Si 10, Al major, Na 0.015, Zn major, Cu 5%; Mn 15, B 150, Be 7, Ni 50, Pb 15, Sc 15, Ga 70 and Ag 1 ppm. It has a 5.331(8), b 9.23(1), c 7.275(6) A, beta 104.15o; H. 3.5-4; Dcalc 3.44, Dobs. 3.08- 3.10; mean refr. ind. approx 1.61. Much of the fraipontite is admixed with sauconite, which may be forming from the fraipontite. XRF analysis of this material gave SiO2 32.8, Al2O3 10.9, MgO < 0.1, CaO 1.51, Na2O < 0.2, K2O < 0.02, TiO2 < 0.02, P2O5 < 0.02, MnO < 0.02, CuO 4.65, ZnO 39.9, ign. loss 13.9, = 103.7.-G.W.R.

From GaN to ZnGa(2)O(4) through a low-temperature process: nanotube and heterostructure arrays.

PubMed

Lu, Ming-Yen; Zhou, Xiang; Chiu, Cheng-Yao; Crawford, Samuel; Gradečak, Silvija

2014-01-22

We demonstrate a method to synthesize GaN-ZnGa2O4 core-shell nanowire and ZnGa2O4 nanotube arrays by a low-temperature hydrothermal process using GaN nanowires as templates. Transmission electron microscopy and X-ray photoelectron spectroscopy results show that a ZnGa2O4 shell forms on the surface of GaN nanowires and that the shell thickness is controlled by the time of the hydrothermal process and thus the concentration of Zn ions in the solution. Furthermore, ZnGa2O4 nanotube arrays were obtained by depleting the GaN core from GaN-ZnGa2O4 core-shell nanowire arrays during the reaction and subsequent etching with HCl. The GaN-ZnGa2O4 core-shell nanowires exhibit photoluminescence peaks centered at 2.60 and 2.90 eV attributed to the ZnGa2O4 shell, as well as peaks centered at 3.35 and 3.50 eV corresponding to the GaN core. We also demonstrate the synthesis of GaN-ZnGa2O4 heterojunction nanowires by a selective formation process as a simple route toward development of heterojunction nanodevices for optoelectronic applications.

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE PAGES

Varley, J. B.; Lordi, V.; He, X.; ...

2017-07-17

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

Band tailing and efficiency limitation in kesterite solar cells

NASA Astrophysics Data System (ADS)

Gokmen, Tayfun; Gunawan, Oki; Todorov, Teodor K.; Mitzi, David B.

2013-09-01

We demonstrate that a fundamental performance bottleneck for hydrazine processed kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells with efficiencies reaching above 11% can be the formation of band-edge tail states, which quantum efficiency and photoluminescence data indicate is roughly twice as severe as in higher-performing Cu(In,Ga)(S,Se)2 devices. Low temperature time-resolved photoluminescence data suggest that the enhanced tailing arises primarily from electrostatic potential fluctuations induced by strong compensation and facilitated by a lower CZTSSe dielectric constant. We discuss the implications of the band tails for the voltage deficit in these devices.

Structural, chemical and optical evaluation of Cu-doped ZnO nanoparticles synthesized by an aqueous solution method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iribarren, A., E-mail: augusto@imre.oc.uh.cu; Hernández-Rodríguez, E.; Maqueira, L.

Highlights: • Cu-doped ZnO nanoparticles obtained by chemical synthesis. • Substitutional or interstitial Cu into ZnO lead specific structural, chemical, and optical changes. • Incorporation efficiency of Cu atoms in ZnO as a function of the Cu concentration in the precursor dissolution. - Abstract: In this work a study of ZnO and Cu-doped ZnO nanoparticles obtained by chemical synthesis in aqueous media was carried out. Structural analysis gave the dominant presence of wurtzite ZnO phase forming a solid solution Zn{sub 1−x}Cu{sub x}O. For high Cu doping CuO phase is also present. For low Cu concentration the lattice shrinks due tomore » Cu atoms substitute Zn atoms. For high Cu concentration the lattice enlarges due to predominance of interstitial Cu. From elemental analysis we determined and analyzed the incorporation efficiency of Cu atoms in Zn{sub 1−x}Cu{sub x}O as a function of the Cu concentration in the precursor dissolution. Combining structural and chemical results we described the Cu/Zn precursor concentrations r{sub w} in which the solid solution of Cu in ZnO is predominant. In the region located at r{sub w} ≈ 0.2–0.3 it is no longer valid. For Cu/Zn precursor concentration r{sub w} > 0.3 interstitial Cu dominates, and some amount of copper oxide appears. As the Cu concentration increases, the effective size of nanoparticles decreases. Photoluminescence (PL) measurements of the Cu-doped ZnO nanoparticles were carried out and analyzed.« less

Copper-zinc electrodeposition in alkaline-sorbitol medium: Electrochemical studies and structural, morphological and chemical composition characterization

NASA Astrophysics Data System (ADS)

de Almeida, M. R. H.; Barbano, E. P.; de Carvalho, M. F.; Tulio, P. C.; Carlos, I. A.

2015-04-01

The galvanostatic technique was used to analyze the electrodeposition of Cu-Zn on to AISI 1010 steel electrode from an alkaline-sorbitol bath with various proportions of the metal ions in the bath: Cu70/Zn30, Cu50/Zn50 and Cu30/Zn70. Coloration of Cu-Zn films were whitish golden, light golden, golden/gray depending on the Cu2+/Zn2+ ratios in the electrodeposition bath, deposition current density (jdep) and charge density (qdep). The highest current efficiency was ∼54.0%, at jdep -1.0 mA cm-2 and qdep 0.40 C cm-2 in the Cu70/Zn30 bath. Energy dispersive spectroscopy indicated that electrodeposits produced from the bath Cu70/Zn30 showed higher Cu content at lower jdep. Also, for same jdep the Cu content increased with qdep. Scanning electron microscopy showed that Cu-Zn electrodeposits of high quality were obtained from the Cu70/Zn30 bath, since the films were fine-grained, except the obtained at jdep -20.0 mA cm-2 and qdep 10.0 C cm-2. Also, these electrodeposits did not present cracks. X-ray analysis of the Cu-Zn electrodeposits obtained at jdep -8.0, -20.0 and -40.0 mA cm-2, in each case, with qdep 2.0 and 10.0 C cm-2, in the Cu70/Zn30 bath, suggested the occurrence of a mixture of the following phases, CuZn, CuZn5 and Cu5Zn8. Galvanostatic electrodeposits of Cu-Zn obtained from sorbitol-alkaline baths exhibited whitish golden color, with good prospects for industrial applications, especially for decorative purposes.

Active sites for CO 2 hydrogenation to methanol on Cu/ZnO catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kattel, Shyam; Ramírez, Pedro J.; Chen, Jingguang G.

The active sites over commercial copper/zinc oxide/aluminum oxide (Cu/ZnO/Al 2O 3) catalysts for carbon dioxide (CO 2) hydrogenation to methanol, the Zn-Cu bimetallic sites or ZnO-Cu interfacial sites, have recently been the subject of intense debate. Here, we report a direct comparison between the activity of ZnCu and ZnO/Cu model catalysts for methanol synthesis. By combining x-ray photoemission spectroscopy, density functional theory, and kinetic Monte Carlo simulations, we can identify and characterize the reactivity of each catalyst. Both experimental and theoretical results agree that ZnCu undergoes surface oxidation under the reaction conditions so that surface Zn transforms into ZnO andmore » allows ZnCu to reach the activity of ZnO/Cu with the same Zn coverage. These results highlight a synergy of Cu and ZnO at the interface that facilitates methanol synthesis via formate intermediates.« less

Active sites for CO 2 hydrogenation to methanol on Cu/ZnO catalysts

DOE PAGES

Kattel, Shyam; Ramírez, Pedro J.; Chen, Jingguang G.; ...

2017-03-23

The active sites over commercial copper/zinc oxide/aluminum oxide (Cu/ZnO/Al 2O 3) catalysts for carbon dioxide (CO 2) hydrogenation to methanol, the Zn-Cu bimetallic sites or ZnO-Cu interfacial sites, have recently been the subject of intense debate. Here, we report a direct comparison between the activity of ZnCu and ZnO/Cu model catalysts for methanol synthesis. By combining x-ray photoemission spectroscopy, density functional theory, and kinetic Monte Carlo simulations, we can identify and characterize the reactivity of each catalyst. Both experimental and theoretical results agree that ZnCu undergoes surface oxidation under the reaction conditions so that surface Zn transforms into ZnO andmore » allows ZnCu to reach the activity of ZnO/Cu with the same Zn coverage. These results highlight a synergy of Cu and ZnO at the interface that facilitates methanol synthesis via formate intermediates.« less

Nuclear Data Sheets for A = 80

NASA Astrophysics Data System (ADS)

Singh, Balraj

2005-06-01

Nuclear spectroscopic information for known nuclides of mass number 80 (Cu,Zn,Ga,Ge,As,Se,Br,Kr,Rb,Sr,Y,Zr) with Z = 29 to 40 and N = 51 to 40 have been evaluated and presented together with adopted energies and Jπ of levels in these nuclei. No excited state data are yet available for 80Cu and 80Zn. In 80Sr, four superdeformed bands have been reported. The half-life of fully-ionized 80Y isomer at 228.5 keV has been measured as 6.8 s 5, as compared to 4.8 s 3 for the neutral atom. This evaluation supersedes previous full evaluations of A = 80 published by 1982Si20 and 1975Gr19, a midstream evaluation of A = 80 published in 'up-date mode' by 1992Si19, and an update of 80Y nuclide for ENSDF by J.K. Tuli in August 2003.

Large Stratospheric IDPs: Chemical Compostion and Comparison with Smaller Stratospheric IDPs

NASA Astrophysics Data System (ADS)

Flynn, G. J.; Bajt, S.; Sutton, S. R.; Klock, W.

1995-09-01

Six large stratospheric IDPs, each greater than 35 microns, previously analyzed using the X-Ray Microprobe at the National Synchrotron Light Source showed an average volatile content consistent with CI or CM meteorites [1]. Seven additional large IDPs, ranging from 37x33 to 50x44 microns in size and having chondritic major element abundances, have been analyzed using the same instrument. Each of these 7 IDPs is depleted in Ca compared to CI (Avg. Ca = 0.48xCI), a feature also observed in the first set of 6, suggesting most or all of these IDPs are hydrated. The average trace element content of these 7 large IDPs is similar to the previous set of 6 (see Figure 1), though Mn and Cu are about 70% higher in this set. The average composition of these large IDPs is distinctly different from that of smaller IDPs (generally 10 to 20 microns), which show enrichments of the volatiles Cu, Zn, Ga, Ge, and Se by factors of 1.5 to 3 over CI [2]. This suggests large IDPs which are strong enough to resist fragmentation on collection are chemically different from typical smaller IDPs. This may reflect a difference in the source(s) being sampled by the two types of IDPs. A subgroup of the smaller IDPs (9 of 51 particles) have a composition similar to CI meteorites and these large IDPs [2]. Bromine is enriched in most of these large IDPs. Two Br-rich IDPs (Br >300 ppm) and one Br-poor IDP (Br ~5 ppm) were each analyzed twice. The two Br-rich IDPs showed about a factor of two Br loss between the first and second analyses, presumably due to sample heating during the first analysis. This suggests some of the Br is very weakly bound in these Br-rich IDPs, a possible signature of Br surface contamination. However, the Br contents measured in the second analyses were still ~50xCI. No loss of Cu, Zn, Ga, Ge or Se was detected in these IDPs, suggesting these elements are in more retentive sites. The Br-poor IDP (Br ~1.5xCI) showed no Br loss in the second analysis. Only one of these IDPs, L2008G10, showed a large Zn depletion (Zn/Fe <0.01xCI). This was accompanied by low contents of Ga, Ge and Br (see Figure 1). This pattern of Zn, Ge, Br and Ga depletions was previously seen in smaller IDPs which were severely heated, presumably on atmospheric entry [2]. Sulfur and K are also low in L2008G10, suggesting these elements are also lost during heating, but the Se content is 0.8xCI. A second particle, L2009C8, has a Zn/Fe=0.26xCI, possibly indicating less severe heating. The low fraction of severely heated IDPs, only one in this set of 7 and none in the set of 6 [1] suggests a very low atmospheric entry velocity for these large IDPs [3]. References: [1] Flynn G. J. et al. (1995) LPS XXVI, 407-408. [2] Flynn G. J. et al. (1993) LPS XXIV, 495-496. [3] Flynn G. J., this volume. Figure 1: Average Fe and CI normalized element abundances in 7 large IDPs, 6 different large IDPs [1], 51 smaller IDPs [2], and the single low-Zn IDP, L2008G10, included in the set of 7 large IDPs.

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

NASA Technical Reports Server (NTRS)

Xing, G. C.; Bachmann, K. J.; Posthill, J. B.; Timmons, M. L.

1991-01-01

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Crystallographic and optical properties and band diagrams of CuGaS2 and CuGa5S8 phases in Cu-poor Cu2S-Ga2S3 pseudo-binary system

NASA Astrophysics Data System (ADS)

Maeda, Tsuyoshi; Yu, Ying; Chen, Qing; Ueda, Kenta; Wada, Takahiro

2017-04-01

We synthesized Cu-poor Cu-Ga-S samples such, as CuGaS2 and CuGa5S8 with the composition of (1 - x)Cu2S-(x)Ga2S3 with 0.5 ≤ x ≤ 1.0, by a mechanochemical process and sequential heating. The crystal structure changes from tetragonal chalcopyrite-type CuGaS2 (0.5 ≤ x ≤ 0.55) to tetragonal stannite-type CuGa5S8 (x = 0.8). For samples with 0.60 ≤ x ≤ 0.75, the diffraction peaks were identified to be those of a mixed phase of the chalcopyrite- and stannite-type structures. The band-gap energies of Cu-poor Cu-Ga-S samples increase in a stepwise manner with increasing x. The band-gap energy of CuGa5S8 (x = 0.8) with the tetragonal stannite-type structure is approximately 2.66 eV, which is wider than that of chalcopyrite-type CuGaS2 (2.45 eV). The energy levels of valence band maxima (VBMs) were estimated from the ionization energies measured by photoemission yield spectroscopy (PYS). The energy levels of the VBM and conduction band minimum (CBM) of the Cu-poor Cu-Ga-S samples decrease significantly with increasing x (decreasing Cu/Ga ratio). The energy level of the VBM of CuGaS2 (-5.8 eV) is considerably deeper than those of CuInSe2 (-5.2 eV) and CuInS2 (-5.5 eV). The VBM of stannite-type CuGa5S8 with x = 0.8 (-6.4 eV) is much deeper than that of chalcopyrite-type CuGaS2 (-5.8 eV) and stannite-type CuIn3Se5 (-5.6 eV). In order to understand the band structures of chalcopyrite-type CuGaS2 and stannite-type CuGa5S8, we performed first-principles calculations using the Heyd-Scuseria-Ernzerhof (HSE06), nonlocal screened hybrid density functional method. The theoretical band-gap energy of stannite-type CuGa5S8 (2.2 eV) is wider than that of chalcopyrite-type CuGaS2 (2.0 eV). Both the theoretical and experimental band gaps of stannite-type CuGa5S8 are about 0.2 eV wider than those of chalcopyrite-type CuGaS2.

Soil solution dynamics of Cu and Zn in a Cu- and Zn-polluted soil as influenced by gamma-irradiation and Cu-Zn interaction.

PubMed

Luo, Y M; Yan, W D; Christie, P

2001-01-01

A pot experiment was conducted to study soil solution dynamics of Cu and Zn in a Cu/Zn-polluted soil as influenced by gamma-irradiation and Cu-Zn interaction. A slightly acid sandy loam was amended with Cu and Zn (as nitrates) either singly or in combination (100 mg Cu and 150 mg Zn kg(-1) soil) and was then gamma-irradiated (10 kGy). Unamended and unirradiated controls were included, and spring barley (Hordeum vulgare L. cv. Forrester) was grown for 50 days. Soil solution samples obtained using soil moisture samplers immediately before transplantation and every ten days thereafter were used directly for determination of Cu, Zn, pH and absorbance at 360 nm (A360). Cu and Zn concentrations in the solution of metal-polluted soil changed with time and were affected by gamma-irradiation and metal interaction. gamma-Irradiation raised soil solution Cu substantially but generally decreased soil solution Zn. These trends were consistent with increased dissolved organic matter (A360) and solution pH after gamma-irradiation. Combined addition of Cu and Zn usually gave higher soil solution concentrations of Cu or Zn compared with single addition of Cu or Zn in gamma-irradiated and non-irradiated soils, indicating an interaction between Cu and Zn. Cu would have been organically complexed and consequently maintained a relatively high concentration in the soil solution under higher pH conditions. Zn tends to occur mainly as free ion forms in the soil solution and is therefore sensitive to changes in pH. The extent to which gamma-irradiation and metal interaction affected solubility and bioavailability of Cu and Zn was a function of time during plant growth. Studies on soil solution metal dynamics provide very useful information for understanding metal mobility and bioavailability.

Hybrid density functional study of band alignment in ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures.

PubMed

Wang, Zhenhai; Zhao, Mingwen; Wang, Xiaopeng; Xi, Yan; He, Xiujie; Liu, Xiangdong; Yan, Shishen

2012-12-05

The band alignment in ZnO-GaN and related heterostructures is crucial for uses in solar harvesting technology. Here, we report our density functional calculations of the band alignment and optical properties of ZnO-GaN and ZnO-(Ga(1-x)Zn(x))(N(1-x)O(x))-GaN heterostructures using a Heyd-Scuseria-Ernzerhof (HSE) hybrid functional. We found that the conventional GGA functionals underestimate not only the band gap but also the band offset of these heterostructures. Using the hybrid functional calculations, we show that the (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution has a direct band gap of about 2.608 eV, in good agreement with the experimental data. More importantly, this solid solution forms type-II band alignment with the host materials. A GaN-(Ga(1-x)Zn(x))(N(1-x)O(x))-ZnO core-shell solar cell model is presented to improve the visible light absorption ability and carrier collection efficiency.

Electroluminescence of ZnO-based semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Novodvorskii, O. A.; Lotin, A. A.; Panchenko, Vladislav Ya; Parshina, L. S.; Khaidukov, E. V.; Zuev, D. A.; Khramova, O. D.

2011-01-01

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm-2, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg0.2Zn0.8O/i-Cd0.2Zn0.8O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs.

Corrosion and runoff rates of Cu and three Cu-alloys in marine environments with increasing chloride deposition rate.

PubMed

Odnevall Wallinder, Inger; Zhang, Xian; Goidanich, Sara; Le Bozec, Nathalie; Herting, Gunilla; Leygraf, Christofer

2014-02-15

Bare copper sheet and three commercial Cu-based alloys, Cu15Zn, Cu4Sn and Cu5Al5Zn, have been exposed to four test sites in Brest, France, with strongly varying chloride deposition rates. The corrosion rates of all four materials decrease continuously with distance from the coast, i.e. with decreasing chloride load, and in the following order: Cu4Sn>Cu sheet>Cu15Zn>Cu5Al5Zn. The patina on all materials was composed of two main layers, Cu2O as the inner layer and Cu2(OH)3Cl as the outer layer, and with a discontinuous presence of CuCl in between. Additional minor patina constituents are SnO2 (Cu4Sn), Zn5(OH)6(CO3)2 (Cu15Zn and Cu5Al5Zn) and Zn6Al2(OH)16CO3·4H2O/Zn2Al(OH)6Cl·2H2O/Zn5Cl2(OH)8·H2O and Al2O3 (Cu5Al5Zn). The observed Zn- and Zn/Al-containing corrosion products might be important factors for the lower sensitivity of Cu15Zn and Cu5Al5Zn against chloride-induced atmospheric corrosion compared with Cu sheet and Cu4Sn. Decreasing corrosion rates with exposure time were observed for all materials and chloride loads and attributed to an improved adherence with time of the outer patina to the underlying inner oxide. Flaking of the outer patina layer was mainly observed on Cu4Sn and Cu sheet and associated with the gradual transformation of CuCl to Cu2(OH)3Cl of larger volume. After three years only Cu5Al5Zn remains lustrous because of a patina compared with the other materials that appeared brownish-reddish. Significantly lower release rates of metals compared with corresponding corrosion rates were observed for all materials. Very similar release rates of copper from all four materials were observed during the fifth year of marine exposure due to an outer surface patina that with time revealed similar constituents and solubility properties. Copyright © 2013 The Authors. Published by Elsevier B.V. All rights reserved.

Strategies to reduce the open-circuit voltage deficit in Cu2ZnSn(S,Se)4 thin film solar cells

NASA Astrophysics Data System (ADS)

Kim, Jekyung; Shin, Byungha

2017-09-01

Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention in thin film solar cell technologies considering its low-cost, non-toxicity, and earth-abundance. However, the highest efficiency still remains at 12.6%, far below the theoretical efficiency of Shockley-Queisser (SQ) limit of around 30%. The limitation behind such shortcoming in the device performance was reported to stem primarily from a high V oc deficit compared to other thin film solar cell technologies such as CdTe or Cu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence of band tailing from cation disordering as well as to the high recombination at the interfaces. In this report, systematic studies on the causes of a high V oc deficit and associated remarkable approaches to achieve high V oc have been reviewed, provided with a guidance on the future direction of CZTSSe research in resolving the high V oc deficit issue. [Figure not available: see fulltext.

Origin discrimination of defatted pork via trace elements profiling, stable isotope ratios analysis, and multivariate statistical techniques.

PubMed

Park, Yu Min; Lee, Cheong Mi; Hong, Joon Ho; Jamila, Nargis; Khan, Naeem; Jung, Jong-Hyun; Jung, Young-Chul; Kim, Kyong Su

2018-09-01

This study verified the origin of 346 defatted Korean and non-Korean pork samples via trace elements profiling, and C and N stable isotope ratios analysis. The analyzed elements were 6 Li, 7 Li, 10 B, 11 B, 51 V , 50 Cr, 52 Cr, 53 Cr, 55 Mn, 58 Ni, 60 Ni, 59 Co, 63 Cu, 65 Cu, 64 Zn, 66 Zn, 69 Ga, 71 Ga, 75 As, 82 Se, 84 Sr, 86 Sr, 87 Sr, 88 Sr, 85 Rb, 94 Mo, 95 Mo, 97 Mo, 107 Ag, 109 Ag, 110 Cd, 111 Cd, 113 Cd, 112 Cd, 114 Cd, 116 Cd, 133 Cs, 206 Pb, 207 Pb, and 208 Pb. Content (mg/kg) of 51 V (0.012), 50 Cr (0.882), 75 As (0.017), 85 Rb (57.7), and 87 Sr (46.3) were high in Korean pork samples whereas 6 Li, 7 Li, 59 Co, 55 Mn, 58 Ni, 84 Sr, 86 Sr, 88 Sr, 111 Cd, and 133 Cs were found higher in non-Korean samples. The results of discriminant analysis showed that the trace elements content and stable isotope ratios were significant for the discrimination of geographical origins with a perfect discrimination rate of 100%. Copyright © 2018 Elsevier Ltd. All rights reserved.

Characterization of efficiency-limiting resistance losses in monolithically integrated Cu(In,Ga)Se2 solar modules

PubMed Central

Yoon, Ju-Heon; Park, Jong-Keuk; Kim, Won Mok; Lee, JinWoo; Pak, Hisun; Jeong, Jeung-hyun

2015-01-01

The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade module without using special sample fabrication methods. The AZO layers between cells were not scribed; instead, the CIGS/CdS/i-ZnO/AZO device was patterned in a long stripe to permit measurement of the Mo electrode pair resistance over current paths through two P2 contacts (Mo/AZO) and along the AZO layer. The intercept and slope of the resistance as a function of the electrode interval yielded the P2 contact resistance and the TCO resistance, respectively. Calibration of the parasitic resistances is discussed as a method of improving the measurement accuracy. The contribution of the P2 contact resistance to the series resistance was comparable to that of the TCO resistance, and its origin was attributed to remnant MoSe2 phases in the P2 region, as verified by transmission electron microscopy. PMID:25573530

Thermodynamic stability of copper gallates determined from the E.M.F. method

NASA Astrophysics Data System (ADS)

Jendrzejczyk-Handzlik, Dominika; Fitzner, Krzysztof

2015-12-01

Employing following electrochemical cells with the solid YSZ electrolyte: CuO, Cu2O /O2-/ air (pO2 = 0.21​ atm) CuGa2O4, CuGaO2, Ga2O3 /O2-/ air (pO2 = 0.21⁣ a t m) CuGa2O4, CuGaO2, Cu2O /O2-/ air (pO2 = 0.21​ atm) Ni, NiO /O2-/ Ga2O3, CuGaO2, Cu The Gibbs free energy of formation of solid CuGa2O4 and CuGaO2 phases was determined in the temperature range from 1048 to 1223 K. Obtained results were used to derive Gibbs free energy change of the reaction of formation of solid phases from respective oxides: CuO+Ga2O3=CuGa2O4 ∆ GCuGa2O4 0(J/mol) = 21642 - 26.01 × T(± 630) ½Cu2O +½Ga2O3=CuGaO2 ∆ G CuGa O2 0 (J / mol) = - 12879 + 6.29 × T (± 640) Finally, present results were applied to the calculation of oxygen potential diagrams at different temperatures, and consequently, to the prediction of the stability ranges of these both solid phases.

Half-lives and branchings for {beta}-delayed neutron emission for neutron-rich Co-Cu isotopes in the r-process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosmer, P.; Estrade, A.; Montes, F.

The {beta} decays of very neutron-rich nuclides in the Co-Zn region were studied experimentally at the National Superconducting Cyclotron Laboratory using the NSCL {beta}-counting station in conjunction with the neutron detector NERO. We measured the branchings for {beta}-delayed neutron emission (P{sub n} values) for {sup 74}Co (18{+-}15%) and {sup 75-77}Ni (10{+-}2.8%, 14{+-}3.6%, and 30{+-}24%, respectively) for the first time, and remeasured the P{sub n} values of {sup 77-79}Cu, {sup 79,81}Zn, and {sup 82}Ga. For {sup 77-79}Cu and for {sup 81}Zn we obtain significantly larger P{sub n} values compared to previous work. While the new half-lives for the Ni isotopes frommore » this experiment had been reported before, we present here in addition the first half-life measurements of {sup 75}Co (30{+-}11 ms) and {sup 80}Cu (170{sub -50}{sup +110} ms). Our results are compared with theoretical predictions, and their impact on various types of models for the astrophysical rapid neutron-capture process (r-process) is explored. We find that with our new data, the classical r-process model is better able to reproduce the A=78-80 abundance pattern inferred from the solar abundances. The new data also influence r-process models based on the neutrino-driven high-entropy winds in core collapse supernovae.« less

Metallurgical characterization of experimental Ag-based soldering alloys.

PubMed

Ntasi, Argyro; Al Jabbari, Youssef S; Silikas, Nick; Al Taweel, Sara M; Zinelis, Spiros

2014-10-01

To characterize microstructure, hardness and thermal properties of experimental Ag-based soldering alloys for dental applications. Ag12Ga (AgGa) and Ag10Ga5Sn (AgGaSn) were fabricated by induction melting. Six samples were prepared for each alloy and microstructure, hardness and their melting range were determined by, scanning electron microscopy, energy dispersive X-ray (EDX) microanalysis, X-ray diffraction (XRD), Vickers hardness testing and differential scanning calorimetry (DSC). Both alloys demonstrated a gross dendritic microstructure while according to XRD results both materials consisted predominately of a Ag-rich face centered cubic phase The hardness of AgGa (61 ± 2) was statistically lower than that of AgGaSn (84 ± 2) while the alloys tested showed similar melting range of 627-762 °C for AgGa and 631-756 °C for AgGaSn. The experimental alloys tested demonstrated similar microstructures and melting ranges. Ga and Sn might be used as alternative to Cu and Zn to modify the selected properties of Ag based soldering alloys.

Metallurgical characterization of experimental Ag-based soldering alloys

PubMed Central

Ntasi, Argyro; Al Jabbari, Youssef S.; Silikas, Nick; Al Taweel, Sara M.; Zinelis, Spiros

2014-01-01

Aim To characterize microstructure, hardness and thermal properties of experimental Ag-based soldering alloys for dental applications. Materials and methods Ag12Ga (AgGa) and Ag10Ga5Sn (AgGaSn) were fabricated by induction melting. Six samples were prepared for each alloy and microstructure, hardness and their melting range were determined by, scanning electron microscopy, energy dispersive X-ray (EDX) microanalysis, X-ray diffraction (XRD), Vickers hardness testing and differential scanning calorimetry (DSC). Results Both alloys demonstrated a gross dendritic microstructure while according to XRD results both materials consisted predominately of a Ag-rich face centered cubic phase The hardness of AgGa (61 ± 2) was statistically lower than that of AgGaSn (84 ± 2) while the alloys tested showed similar melting range of 627–762 °C for AgGa and 631–756 °C for AgGaSn. Conclusion The experimental alloys tested demonstrated similar microstructures and melting ranges. Ga and Sn might be used as alternative to Cu and Zn to modify the selected properties of Ag based soldering alloys. PMID:25382945

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nandi, R., E-mail: rajunandi@iitb.ac.in; Mohan, S., E-mail: rajunandi@iitb.ac.in; Major, S. S.

2014-04-24

ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology andmore » vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.« less

Growth and characterization of BaZnGa

DOE PAGES

Jo, Na Hyun; Lin, Qisheng; Nguyen, Manh Cuong; ...

2017-10-20

In this paper, we report the growth, structure and characterization of BaZnGa, identifying it as the sole known ternary compound in the Ba–Zn–Ga system. Single crystals of BaZnGa can be grown out of excess Ba–Zn and adopt a tI36 structure type. There are three unique Ba sites and three M = Zn/Ga sites. Using DFT calculations we can argue that whereas one of these three M sites is probably solely occupied by Ga, the other two M sites, most likely, have mixed Zn/Ga occupancy. Finally, temperature-dependent resistivity and magnetization measurements suggest that BaZnGa is a poor metal with no electronicmore » or magnetic phase transitions between 1.8 and 300 K.« less

Electroluminescence of ZnO-based semiconductor heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novodvorskii, O A; Lotin, A A; Panchenko, Vladislav Ya

2011-01-31

Using pulsed laser deposition, we have grown n-ZnO/p-GaN, n-ZnO/i-ZnO/p-GaN and n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN light-emitting diode (LED) heterostructures with peak emission wavelengths of 495, 382 and 465 nm and threshold current densities (used in electroluminescence measurements) of 1.35, 2, and 0.48 A cm{sup -2}, respectively. Because of the spatial carrier confinement, the n-ZnO/n-Mg{sub 0.2}Zn{sub 0.8}O/i-Cd{sub 0.2}Zn{sub 0.8}O/p-GaN double heterostructure LED offers a higher electroluminescence intensity and lower electroluminescence threshold in comparison with the n-ZnO/p-GaN and n-ZnO/i-ZnO/p-GaN LEDs. (lasers)

Facile synthesis of Cu/tetrapod-like ZnO whisker compounds with enhanced photocatalytic properties

NASA Astrophysics Data System (ADS)

Liu, Hong; Liu, Huarong; Fan, Ximei

2017-09-01

Cu/tetrapod-like ZnO whisker (T-ZnOw) compounds were successfully synthesized using N2H4 \\cdot H2O as a reducing agent by a simple reduction method without any insert gas at room temperature. The crystal phase composition and morphology of the as-prepared samples were investigated by XRD, SEM and FESEM tests. The photocatalytic property of the as-prepared samples was detected by the degradation of methyl orange (MO) aqueous solution under UV irradiation. It can be found that Cu nanoparticles (CuNPs) dispersed on the surface of T-ZnOw increased with the increasing of Cu/Zn molar ratios (Cu/Zn MRs), and an octahedral structure of CuNPs was obtained when the sample was prepared with less than and equal to 7.30% Cu/Zn MR, but tended to a spherical or nanorod structure of CuNPs densely arranged on the surface of T-ZnOw, which is prepared by Cu/Zn MRs up to 22.00%. All the compounds exhibited excellent photocatalytic activity in decomposing of MO than T-ZnOw, the photocatalytic property of the samples increased with the increasing of Cu/Zn MRs up to 7.30%, while it decreases when further increasing the Cu/Zn MRs. The Schottky barrier of the Cu/T-ZnOw compound can effectively capture photoinduced electrons from the interface and enhanced the photocatalytic property of T-ZnOw.

Novel dimeric interface and electrostatic recognition in bacterial Cu,Zn superoxide dismutase

PubMed Central

Bourne, Yves; Redford, Susan M.; Steinman, Howard M.; Lepock, James R.; Tainer, John A.; Getzoff, Elizabeth D.

1996-01-01

Eukaryotic Cu,Zn superoxide dismutases (CuZnSODs) are antioxidant enzymes remarkable for their unusually stable β-barrel fold and dimer assembly, diffusion-limited catalysis, and electrostatic guidance of their free radical substrate. Point mutations of CuZnSOD cause the fatal human neurodegenerative disease amyotrophic lateral sclerosis. We determined and analyzed the first crystallographic structure (to our knowledge) for CuZnSOD from a prokaryote, Photobacterium leiognathi, a luminescent symbiont of Leiognathid fish. This structure, exemplifying prokaryotic CuZnSODs, shares the active-site ligand geometry and the topology of the Greek key β-barrel common to the eukaryotic CuZnSODs. However, the β-barrel elements recruited to form the dimer interface, the strategy used to forge the channel for electrostatic recognition of superoxide radical, and the connectivity of the intrasubunit disulfide bond in P. leiognathi CuZnSOD are discrete and strikingly dissimilar from those highly conserved in eukaryotic CuZnSODs. This new CuZnSOD structure broadens our understanding of structural features necessary and sufficient for CuZnSOD activity, highlights a hitherto unrecognized adaptability of the Greek key β-barrel building block in evolution, and reveals that prokaryotic and eukaryotic enzymes diverged from one primordial CuZnSOD and then converged to distinct dimeric enzymes with electrostatic substrate guidance. PMID:8917495

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

NASA Technical Reports Server (NTRS)

Olsen, Larry C.

1997-01-01

This report concerns studies of the use of n-type ZnSe as a window layer for n/p GaAs and GaInP2 solar cells. Emphasis was placed in this phase of the project on characterizing the interface between n-type ZnSe films grown on epi-GaAs films grown onto single crystal GaAs. Epi-GaAs and heteroepitaxial ZnSe films were grown by MOCVD with a Spire 50OXT Reactor. After growing epitaxial GaAs films on single crystal GaAs wafers, well-oriented crystalline ZnSe films were grown by MOCVD. ZnSe films were grown with substrate temperatures ranging from 250 C to 450 C. Photoluminescence studies carried out by researchers at NASA Lewis determined that the surface recombination velocity at a GaAs surface was significantly reduced after the deposition of a heteroepitaxial layer of ZnSe. The optimum temperature for ZnSe deposition appears to be on the order of 350 C.

Synthesis of ZnGa2O4 Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

PubMed Central

2010-01-01

In this paper, ZnGa2O4 hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga2O3 nanowires were synthesized and employed as templates for the growth of ZnGa2O4 nanocombs; then, the as-prepared Ga2O3 nanowires were reacted with ZnO vapor to form ZnGa2O4 nanocombs. Before the reaction, the Au nanoparticles were deposited on the surfaces of Ga2O3 nanowires and used as catalysts to control the teeth growth of ZnGa2O4 nanocombs. The as-prepared ZnGa2O4 nanocombs were highly crystallized with cubic spinel structure. From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa2O4 nanocombs, which make it promising application as an optical material. PMID:20802787

Cryoprotective role of organic Zn and Cu supplementation in goats (Capra hircus) diet.

PubMed

Arangasamy, Arunachalam; Krishnaiah, Mayasula Venkata; Manohar, Narasimhaiah; Selvaraju, Sellappan; Rani, Guvvala Pushpa; Soren, Nira Manik; Reddy, Ippala Janardhan; Ravindra, Janivara Parameshwaraiah

2018-04-01

The current study focused on cryopreservation and assessment of characters of post-thaw semen of indigenous Osmanabadi bucks maintained with standard diet, supplemented with different concentrations of organic zinc (Zn), copper (Cu) or in combination, for a period of 180 days. The different doses of organic Zn and Cu were fed per kg DM basis, Zn groups (low: Zn20, medium: Zn40 and high: Zn60), Cu groups: (low: Cu12.5, medium: Cu25 and high: Cu37.5) and combination of Zn + Cu groups (low: Zn20 + Cu12.5, medium: Zn40 + Cu25 and high: Zn60 + Cu37.5) respectively. The control group bucks were maintained mainly on the basal diet without any additional mineral supplementation. Two hundred and forty (240) semen samples were collected from 40 bucks aged 11 months, through electro ejaculator method, processed and analysed for sperm quality parameters both at pre freeze and post-thaw stage. The semen samples were diluted in Tris egg yolk extender, cooled and equilibrated for 4 h at 5 °C, cryopreserved using programmable freezer (PLANER Kryo 360-1.7) and stored at -196 °C. The organic trace minerals (Zn, Cu and Zn + Cu) protected the spermatozoa against the cryoinjury and maintained higher post-thaw semen parameters except in high Zn group. Additional feeding of organic Cu and Zn to bucks had a protective role and resulted in higher sperm liveability, plasma membrane and acrosome integrities, motility and velocity and reduced oxidative stress in supplemented goats (P < 0.05). Copyright © 2018 Elsevier Inc. All rights reserved.

Design and exploration of semiconductors from first principles: A review of recent advances

NASA Astrophysics Data System (ADS)

Oba, Fumiyasu; Kumagai, Yu

2018-06-01

Recent first-principles approaches to semiconductors are reviewed, with an emphasis on theoretical insight into emerging materials and in silico exploration of as-yet-unreported materials. As relevant theory and methodologies have developed, along with computer performance, it is now feasible to predict a variety of material properties ab initio at the practical level of accuracy required for detailed understanding and elaborate design of semiconductors; these material properties include (i) fundamental bulk properties such as band gaps, effective masses, dielectric constants, and optical absorption coefficients; (ii) the properties of point defects, including native defects, residual impurities, and dopants, such as donor, acceptor, and deep-trap levels, and formation energies, which determine the carrier type and density; and (iii) absolute and relative band positions, including ionization potentials and electron affinities at semiconductor surfaces, band offsets at heterointerfaces between dissimilar semiconductors, and Schottky barrier heights at metal–semiconductor interfaces, which are often discussed systematically using band alignment or lineup diagrams. These predictions from first principles have made it possible to elucidate the characteristics of semiconductors used in industry, including group III–V compounds such as GaN, GaP, and GaAs and their alloys with related Al and In compounds; amorphous oxides, represented by In–Ga–Zn–O transparent conductive oxides (TCOs), represented by In2O3, SnO2, and ZnO; and photovoltaic absorber and buffer layer materials such as CdTe and CdS among group II–VI compounds and chalcopyrite CuInSe2, CuGaSe2, and CuIn1‑ x Ga x Se2 (CIGS) alloys, in addition to the prototypical elemental semiconductors Si and Ge. Semiconductors attracting renewed or emerging interest have also been investigated, for instance, divalent tin compounds, including SnO and SnS; wurtzite-derived ternary compounds such as ZnSnN2 and CuGaO2; perovskite oxides such as SrTiO3 and BaSnO3; and organic–inorganic hybrid perovskites, represented by CH3NH3PbI3. Moreover, the deployment of first-principles calculations allows us to predict the crystal structure, stability, and properties of as-yet-unreported materials. Promising materials have been explored via high-throughput screening within either publicly available computational databases or unexplored composition and structure space. Reported examples include the identification of nitride semiconductors, TCOs, solar cell photoabsorber materials, and photocatalysts, some of which have been experimentally verified. Machine learning in combination with first-principles calculations has emerged recently as a technique to accelerate and enhance in silico screening. A blend of computation and experimentation with data science toward the development of materials is often referred to as materials informatics and is currently attracting growing interest.

Electrodeposition of Zn and Cu-Zn alloy from ZnO/CuO precursors in deep eutectic solvent

NASA Astrophysics Data System (ADS)

Xie, Xueliang; Zou, Xingli; Lu, Xionggang; Lu, Changyuan; Cheng, Hongwei; Xu, Qian; Zhou, Zhongfu

2016-11-01

The electrodeposition of Zn and Cu-Zn alloy has been investigated in choline chloride (ChCl)/urea (1:2 molar ratio) based deep eutectic solvent (DES). Cyclic voltammetry study demonstrates that the reduction of Zn(II) to Zn is a diffusion-controlled quasi-reversible, one-step, two electrons transfer process. Chronoamperometric investigation indicates that the electrodeposition of Zn on a Cu electrode typically involves three-dimensional instantaneous nucleation with diffusion-controlled growth process. Micro/nanostructured Zn films can be obtained by controlling the electrodeposition potential and temperature. The electrodeposited Zn crystals preferentially orient parallel to the (101) plane. The Zn films electrodeposited under more positive potentials and low temperatures exhibit improved corrosion resistance in 3 wt% NaCl solution. In addition, Cu-Zn alloy films have also been electrodeposited directly from CuO-ZnO precursors in ChCl/urea-based DES. The XRD analysis indicates that the phase composition of the electrodeposited Cu-Zn alloy depends on the electrodeposition potential.

Complete transformation of ZnO and CuO nanoparticles in culture medium and lymphocyte cells during toxicity testing.

PubMed

Ivask, Angela; Scheckel, Kirk G; Kapruwan, Pankaj; Stone, Vicki; Yin, Hong; Voelcker, Nicolas H; Lombi, Enzo

2017-03-01

Here, we present evidence on complete transformation of ZnO and CuO nanoparticles, which are among the most heavily studied metal oxide particles, during 24 h in vitro toxicological testing with human T-lymphocytes. Synchrotron radiation-based X-ray absorption near edge structure (XANES) spectroscopy results revealed that Zn speciation profiles of 30 nm and 80 nm ZnO nanoparticles, and ZnSO 4 - exposed cells were almost identical with the prevailing species being Zn-cysteine. This suggests that ZnO nanoparticles are rapidly transformed during a standard in vitro toxicological assay, and are sequestered intracellularly, analogously to soluble Zn. Complete transformation of ZnO in the test conditions was further supported by almost identical Zn spectra in medium to which ZnO nanoparticles or ZnSO 4 was added. Likewise, Cu XANES spectra for CuO and CuSO 4 -exposed cells and cell culture media were similar. These results together with our observation on similar toxicological profiles of ZnO and soluble Zn, and CuO and soluble Cu, underline the importance of dissolution and subsequent transformation of ZnO and CuO nanoparticles during toxicological testing and provide evidence that the nano-specific effect of ZnO and CuO nanoparticles is negligible in this system. We strongly suggest to account for this aspect when interpreting the toxicological results of ZnO and CuO nanoparticles.

Complete transformation of ZnO and CuO nanoparticles in ...

EPA Pesticide Factsheets

Here, we present evidence on complete transformation of ZnO and CuO nanoparticles, which are among the most heavily studied metal oxide particles, during 24 h in vitro toxicological testing with human T-lymphocytes. Synchrotron radiation-based X-ray absorption near edge structure (XANES) spectroscopy results revealed that Zn speciation profiles of 30 nm and 80 nm ZnO nanoparticles, and ZnSO4- exposed cells were almost identical with the prevailing species being Zn-cysteine. This suggests that ZnO nanoparticles are rapidly transformed during a standard in vitro toxicological assay, and are sequestered intracellularly, analogously to soluble Zn. Complete transformation of ZnO in the test conditions was further supported by almost identical Zn spectra in medium to which ZnO nanoparticles or ZnSO4 was added. Likewise, Cu XANES spectra for CuO and CuSO4-exposed cells and cell culture media were similar. These results together with our observation on similar toxicological profiles of ZnO and soluble Zn, and CuO and soluble Cu, underline the importance of dissolution and subsequent transformation of ZnO and CuO nanoparticles during toxicological testing and provide evidence that the nano-specific effect of ZnO and CuO nanoparticulates is negligible in this system. We strongly suggest to account for this aspect when interpreting the toxicological results of ZnO and CuO nanoparticles. Although a number of studies have discussed the transformation of nanoparticles during

Quantifying point defects in Cu 2 ZnSn(S,Se) 4 thin films using resonant x-ray diffraction

DOE PAGES

Stone, Kevin H.; Christensen, Steven T.; Harvey, Steven P.; ...

2016-10-17

Cu 2ZnSn(S,Se)4 is an interesting, earth abundant photovoltaic material, but has suffered from low open circuit voltage. To better understand the film structure, we have measured resonant x-ray diffraction across the Cu and Zn K-edges for the device quality thin films of Cu 2ZnSnS4 (8.6% efficiency) and Cu 2ZnSn(S,Se)4 (3.5% efficiency). This approach allows for the confirmation of the underlying kesterite structure and quantification of the concentration of point defects and vacancies on the Cu, Zn, and Sn sublattices. Rietveld refinement of powder diffraction data collected at multiple energies is used to determine that there exists a high level ofmore » Cu Zn and Zn Cu defects on the 2c and 2d Wyckoff positions. We observe a significantly lower concentration of Zn Sn defects and Cu or Zn vacancies.« less

Effects of the ZnO layer on the structure and white light emission properties of a ZnS:Mn/GaN nanocomposite system.

PubMed

Wang, Cai-Feng; Hu, Bo

2017-10-01

ZnO films were inserted between the ZnS:Mn films and GaN substrates by pulsed laser deposition (PLD). The structure, morphology, and optical properties of the ZnS:Mn/ZnO/GaN nanocomposite systems have been investigated. X-ray diffraction results show that there are three diffraction peaks located at 28.4°, 34.4°, and 34.1°, which correspond to the β-ZnS(111), ZnO(002), and GaN(002) planes, respectively. Due to the insertion of ZnO films, the diffraction peak intensity of ZnS:Mn in ZnS:Mn/ZnO/GaN is stronger than that of ZnS:Mn in ZnS:Mn/GaN, and the full width at half-maximum is smaller. Though the transmittance of ZnS:Mn/ZnO films is slightly lower than that of ZnS:Mn films, the transmittance is still higher than 80%. Compared with ZnS:Mn/GaN, an ultraviolet (UV) emission at 387 nm (originated from the near-band emission of ZnO) and a green light emission at about 520 nm appeared in the photoluminescence (PL) spectra of ZnS:Mn/ZnO/GaN, in addition to the blue emission at 435 nm and the orange-red emission at 580 nm. The emission at 520 nm may be related to the deep-level emission from ZnO and the interface of ZnS:Mn/ZnO. The PL spectrum of ZnS:Mn/ZnO/GaN covers the visible region from the blue light to the red light (400-700 nm), and its color coordinate and color temperature are (0.3103,0.3063) and 6869 K, respectively, presenting strong white light emission.

Cu,Zn superoxide dismutase: cloning and analysis of the Taenia solium gene and Taenia crassiceps cDNA.

PubMed

Parra-Unda, Ricardo; Vaca-Paniagua, Felipe; Jiménez, Lucia; Landa, Abraham

2012-01-01

Cytosolic Cu,Zn superoxide dismutase (Cu,Zn-SOD) catalyzes the dismutation of superoxide (O(2)(-)) to oxygen and hydrogen peroxide (H(2)O(2)) and plays an important role in the establishment and survival of helminthes in their hosts. In this work, we describe the Taenia solium Cu,Zn-SOD gene (TsCu,Zn-SOD) and a Taenia crassiceps (TcCu,Zn-SOD) cDNA. TsCu,Zn-SOD gene that spans 2.841 kb, and has three exons and two introns; the splicing junctions follow the GT-AG rule. Analysis in silico of the gene revealed that the 5'-flanking region has three putative TATA and CCAAT boxes, and transcription factor binding sites for NF1 and AP1. The transcription start site was a C, located at 22 nucleotides upstream of the translation start codon (ATG). Southern blot analysis showed that TcCu,Zn-SOD and TsCu,Zn-SOD genes are encoded by a single copy. The deduced amino acid sequences of TsCu,Zn-SOD gene and TcCu,Zn-SOD cDNA reveal 98.47% of identity, and the characteristic motives, including the catalytic site and β-barrel structure of the Cu,Zn-SOD. Proteomic and immunohistochemical analysis indicated that Cu,Zn-SOD does not have isoforms, is distributed throughout the bladder wall and is concentrated in the tegument of T. solium and T. crassiceps cysticerci. Expression analysis revealed that TcCu,Zn-SOD mRNA and protein expression levels do not change in cysticerci, even upon exposure to O(2)(-) (0-3.8 nmol/min) and H(2)O(2) (0-2mM), suggesting that this gene is constitutively expressed in these parasites. Published by Elsevier Inc.

Abundant defects and defect clusters in kesterite Cu2ZnSnS4 and Cu2ZnSnSe4

NASA Astrophysics Data System (ADS)

Chen, Shiyou; Wang, Lin-Wang; Walsh, Aron; Gong, Xin-Gao; Wei, Su-Huai

2013-03-01

Cu2ZnSnS4 and Cu2ZnSnSe4 are drawing intensive attention as the light-absorber materials in thin-film solar cells. A large variety of intrinsic defects can be formed in these quaternary semiconductors, which have important influence on their optical and electrical properties, and hence their photovoltaic performance. We will present our first-principles calculation study on a series of intrinsic defects and defect clusters in Cu2ZnSnS4 and Cu2ZnSnSe4, and discuss: (i) strong phase-competition between the kesterites and the coexisting secondary compounds; (ii) the dominant CuZn antisites and Cu vacancies which determine the intrinsic p-type conductivity, and their dependence on the elemental ratios; (iii) the high population of charge-compensated defect clusters (like VCu + ZnCu and 2CuZn + SnZn) and their contribution to non-stoichiometry ; (iv) the deep-level defects which act as recombination centers. Based on the calculation, we will explain the experimental observation that Cu poor and Zn rich conditions give the highest solar cell efficiency, as well as suggesting an efficiency limitation in Cu2ZnSn(S,Se)4 cells with high S composition. Supported by NSF of China, JCAP: a U.S. DOE Energy Innovation Hub, Royal Society of U.K. and EPSRC, and U.S. DOE.

New Production Routes for Medical Isotopes 64Cu and 67Cu Using Accelerator Neutrons

NASA Astrophysics Data System (ADS)

Kin, Tadahiro; Nagai, Yasuki; Iwamoto, Nobuyuki; Minato, Futoshi; Iwamoto, Osamu; Hatsukawa, Yuichi; Segawa, Mariko; Harada, Hideo; Konno, Chikara; Ochiai, Kentaro; Takakura, Kosuke

2013-03-01

We have measured the activation cross sections producing 64Cu and 67Cu, promising medical radioisotopes for molecular imaging and radioimmunotherapy, by bombarding a natural zinc sample with 14 MeV neutrons. We estimated the production yields of 64Cu and 67Cu by fast neutrons from \\text{natC(d,n) with 40 MeV 5 mA deuterons. We used the present result together with the evaluated cross section of Zn isotopes. The calculated 64Cu yield is 1.8 TBq (175 g 64Zn) for 12 h of irradiation; the yields of 67Cu by 67Zn(n,p)67Cu and 68Zn(n,x)67Cu were 249 GBq (184 g 67Zn) and 287 GBq (186 g 68Zn) at the end of 2 days of irradiation, respectively. From the results, we proposed a new route to produce 67Cu with very little radionuclide impurity via the 68Zn(n,x)67Cu reaction, and showed the 64Zn(n,p)64Cu reaction to be a promising route to produce 64Cu. Both 67Cu and 64Cu are noted to be produced using fast neutrons.

Room-Temperature Quantum Cascade Laser: ZnO/Zn1- x Mg x O Versus GaN/Al x Ga1- x N

NASA Astrophysics Data System (ADS)

Chou, Hung Chi; Mazady, Anas; Zeller, John; Manzur, Tariq; Anwar, Mehdi

2013-05-01

A ZnO/Zn1- x Mg x O-based quantum cascade laser (QCL) is proposed as a candidate for generation of THz radiation at room temperature. The structural and material properties, field dependence of the THz lasing frequency, and generated power are reported for a resonant phonon ZnO/Zn0.95Mg0.05O QCL emitting at 5.27 THz. The theoretical results are compared with those from GaN/Al x Ga1- x N QCLs of similar geometry. Higher calculated optical output powers [ {P}_{{ZnMgO}} = 2.89 mW (nonpolar) at 5.27 THz and 2.75 mW (polar) at 4.93 THz] are obtained with the ZnO/Zn0.95Mg0.05O structure as compared with GaN/Al0.05Ga0.95N QCLs [ {P}_{{AlGaN}} = 2.37 mW (nonpolar) at 4.67 THz and 2.29 mW (polar) at 4.52 THz]. Furthermore, a higher wall-plug efficiency (WPE) is obtained for ZnO/ZnMgO QCLs [24.61% (nonpolar) and 23.12% (polar)] when compared with GaN/AlGaN structures [14.11% (nonpolar) and 13.87% (polar)]. These results show that ZnO/ZnMgO material is optimally suited for THz QCLs.

Tuning the emission of aqueous Cu:ZnSe quantum dots to yellow light window

NASA Astrophysics Data System (ADS)

Wang, Chunlei; Hu, Zhiyang; Xu, Shuhong; Wang, Yanbin; Zhao, Zengxia; Wang, Zhuyuan; Cui, Yiping

2015-07-01

Synthesis of internally doped Cu:ZnSe QDs in an aqueous solution still suffers from narrow tunable emissions from the blue to green light window. In this work, we extended the emission window of aqueous Cu:ZnSe QDs to the yellow light window. Our results show that high solution pH, multiple injections of Zn precursors, and nucleation doping strategy are three key factors for preparing yellow emitted Cu:ZnSe QDs. All these factors can depress the reactivity of CuSe nuclei and Zn monomers, promoting ZnSe growth outside CuSe nuclei rather than form ZnSe nuclei separately. With increased ZnSe QD size, the conduction band and nearby trap state energy levels shift to higher energy sites, causing Cu:ZnSe QDs to have a much longer emission.

Stable Cu and Zn isotope ratios as tracers of sources and transport of Cu and Zn in contaminated soil

NASA Astrophysics Data System (ADS)

Bigalke, Moritz; Weyer, Stefan; Kobza, Jozef; Wilcke, Wolfgang

2010-12-01

Copper and Zn metals are produced in large quantities for different applications. During Cu production, large amounts of Cu and Zn can be released to the environment. Therefore, the surroundings of Cu smelters are frequently metal-polluted. We determined Cu and Zn concentrations and Cu and Zn stable isotope ratios (δ 65Cu, δ 66Zn) in three soils at distances of 1.1, 3.8, and 5.3 km from a Slovak Cu smelter and in smelter wastes (slag, sludge, ash) to trace sources and transport of Cu and Zn in soils. Stable isotope ratios were measured by multicollector inductively coupled plasma mass spectrometry (MC-ICP-MS) in total digests. Soils were heavily contaminated with concentrations up to 8087 μg g -1 Cu and 2084 μg g -1 Zn in the organic horizons. The δ 65Cu values varied little (-0.12‰ to 0.36‰) in soils and most wastes and therefore no source identification was possible. In soils, Cu became isotopically lighter with increasing depth down to 0.4 m, likely because of equilibrium reactions between dissolved and adsorbed Cu species during transport of smelter-derived Cu through the soil. The δ 66Zn IRMM values were isotopically lighter in ash (-0.41‰) and organic horizons (-0.85‰ to -0.47‰) than in bedrock (-0.28‰) and slag (0.18‰) likely mainly because of kinetic fractionation during evaporation and thus allowed for separation of smelter-Zn from native Zn in soil. In particular in the organic horizons large variations in δ 66Zn values occur, probably caused by biogeochemical fractionation in the soil-plant system. In the mineral horizons, Zn isotopes showed only minor shifts to heavier δ 66Zn values with depth mainly because of the mixing of smelter-derived Zn and native Zn in the soils. In contrast to Cu, Zn isotope fractionation between dissolved and adsorbed species was probably only a minor driver in producing the observed variations in δ 66Zn values. Our results demonstrate that metal stable isotope ratios may serve as tracer of sources, vertical dislocation, and biogeochemical behavior in contaminated soil.

Method of bonding metals to ceramics

DOEpatents

Maroni, Victor A.

1991-01-01

A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, An and alloys thereof.

Electrochemical corrosion behavior, microstructure and magnetic properties of sintered Nd-Fe-B permanent magnet doped by CuZn5 powders

NASA Astrophysics Data System (ADS)

Liu, W. Q.; Wang, Z.; Sun, C.; Yue, M.; Liu, Y. Q.; Zhang, D. T.; Zhang, J. X.

2014-05-01

Nd-Fe-B permanent magnets with a small amount of CuZn5 powders doping were prepared by conventional sintered method. The effects of CuZn5 contents on magnetic properties and microstructure, electrochemical corrosion resistance of sintered Nd-Fe-B magnets were systematically studied. The results show that the magnetic properties of magnets do not have a significant variation by CuZn5 powders doping; the coercivity of magnets rises gradually, while the remanence of the magnets decreases a little with increasing of the CuZn5 amount. The CuZn5 doped magnets have more positive corrosion potential, Ecorr, and much lower corrosion current density, icorr, than the magnets without CuZn5 doping, indicating CuZn5 doping could improve the corrosion resistance. Both Zn and Cu enrich mainly into the Nd-rich phase, fully improve the wettability between the Nd-rich phase and the Nd2Fe14B phase, and repair the defects of the main phase, so the coercivity of magnets doped with CuZn5 powders rises. Such microstructure modification effectively restrains the aggressive inter-granular corrosion. As a result, the CuZn5 doped magnet possesses excellent corrosion resistance in NaCl electrolyte.

Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.

PubMed

Kim, Si Joon; Jung, Joohye; Lee, Keun Woo; Yoon, Doo Hyun; Jung, Tae Soo; Dugasani, Sreekantha Reddy; Park, Sung Ha; Kim, Hyun Jae

2013-11-13

A high-sensitivity, label-free method for detecting deoxyribonucleic acid (DNA) using solution-processed oxide thin-film transistors (TFTs) was developed. Double-crossover (DX) DNA nanostructures with different concentrations of divalent Cu ion (Cu(2+)) were immobilized on an In-Ga-Zn-O (IGZO) back-channel surface, which changed the electrical performance of the IGZO TFTs. The detection mechanism of the IGZO TFT-based DNA biosensor is attributed to electron trapping and electrostatic interactions caused by negatively charged phosphate groups on the DNA backbone. Furthermore, Cu(2+) in DX DNA nanostructures generates a current path when a gate bias is applied. The direct effect on the electrical response implies that solution-processed IGZO TFTs could be used to realize low-cost and high-sensitivity DNA biosensors.

Color Tuning in Garnet Oxides: The Role of Tetrahedral Coordination Geometry for 3 d Metal Ions and Ligand-Metal Charge Transfer (Band-Gap Manipulation).

PubMed

Bhim, Anupam; Laha, Sourav; Gopalakrishnan, Jagannatha; Natarajan, Srinivasan

2017-10-18

We explored garnet-structured oxide materials containing 3d transition-metal ions (e.g., Co 2+ , Ni 2+ , Cu 2+ , and Fe 3+ ) for the development of new inorganic colored materials. For this purpose, we synthesized new garnets, Ca 3 Sb 2 Ga 2 ZnO 12 (I) and Ca 3 Sb 2 Fe 2 ZnO 12 (II), that were isostructural with Ca 3 Te 2 Zn 3 O 12 . Substitution of Co 2+ , Ni 2+ , and Cu 2+ at the tetrahedral Zn 2+ sites in I and II gave rise to brilliantly colored materials (different shades of blue, green, turquoise, and red). The materials were characterized by optical absorption spectroscopy and CIE chromaticity diagrams. The Fe 3+ -containing oxides showed band-gap narrowing (owing to strong sp-d exchange interactions between Zn 2+ and the transition-metal ion), and this tuned the color of these materials uniquely. We also characterized the color and optical absorption properties of Ca 3 Te 2 Zn 3-x Co x O 12 (0

Critical Elements in Fly Ash from the Combustion of Bituminous Coal in Major Polish Power Plants

NASA Astrophysics Data System (ADS)

Bielowicz, Barbara; Botor, Dariusz; Misiak, Jacek; Wagner, Marian

2018-03-01

The concentration of critical elements, including such REE as Fe, Co, W, Zn, Cr, Ni, V, Mn, Ti, Ag, Ga, Ta, Sr, Li, and Cu, in the so-called fly ash obtained from the 9 Polish power plants and 1 thermal power station has been determined. The obtained values, compared with the global average concentration in bituminous coal ash and sedimentary rocks (Clarke values), have shown that the enrichment of fly ash in the specified elements takes place in only a few bituminous coal processing sites in Poland. The enrichment factor (EF) is only slightly higher (the same order of magnitude) than the Clarke values. The enrichment factor in relation to the Clarke value in the Earth's crust reached values above 10 in all of the examined ashes for the following elements: Cr, Ni, V, W, and, in some ash samples, also Cu and Zn. The obtained values are low, only slightly higher than the global average concentrations in sedimentary rocks and bituminous coal ashes. The ferromagnetic grains (microspheres) found in bituminous coal fly ashes seem to be the most economically prospective in recovery of selected critical elements. The microanalysis has shown that iron cenospheres and plerospheres in fly ash contain, in addition to enamel and iron oxides (magnetite and hematite), iron spinels enriched in Co, Cr, Cu, Mn, Ni, W, and Zn.

Homologous compounds of type ARO3(ZnO)m in the system Ga-Sn-Zn-O

NASA Astrophysics Data System (ADS)

Eichhorn, Simon; Schmid, Herbert; Assenmacher, Wilfried; Mader, Werner

2017-02-01

Several members of hitherto unknown homologous compounds [Sn0.5Zn0.5]GaO3(ZnO)m (m=3-7) of the general formula ARO3(ZnO)m were prepared by solid state methods from the binary oxides in sealed Pt-tubes. UV-vis measurements confirm these compounds to be transparent oxides with an optical band gap in the UV region with Eg≈3 eV. Rietveld refinements on powder samples of [Sn0.5Zn0.5]GaO3(ZnO)m proved the compounds to be isostructural with InGaO3(ZnO)m, where In3+ on octahedral sites is replaced statistically by Sn4+ and Zn2+ in equal amounts preserving an average charge of 3+. Additionally, the structure of [Sn0.5Zn0.5]GaO3(ZnO)3 has been determined from flux-grown single crystals by X-ray diffraction (R 3 ̅ m , Z=3, a=3.2387(7) Å, c=41.78(1) Å, 19 parameters, 201 independent reflections, R1=0.047, wR2=0.074). The compound [Sn0.5Zn0.5]GaO3(ZnO)3 is isostructural with InGaO3(ZnO)3. [Sn0.5Zn0.5]GaO3(ZnO)3 was furthermore analyzed by High Angle Annular Dark Field (HAADF) scanning TEM and EELS spectroscopic imaging, supporting the structure model derived from X-ray diffraction data.

Detection of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases in co-evaporated Cu2ZnSnSe4 thin-films

NASA Astrophysics Data System (ADS)

Schwarz, Torsten; Marques, Miguel A. L.; Botti, Silvana; Mousel, Marina; Redinger, Alex; Siebentritt, Susanne; Cojocaru-Mirédin, Oana; Raabe, Dierk; Choi, Pyuck-Pa

2015-10-01

Cu2ZnSnSe4 thin-films for photovoltaic applications are investigated using combined atom probe tomography and ab initio density functional theory. The atom probe studies reveal nano-sized grains of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 composition, which cannot be assigned to any known phase reported in the literature. Both phases are considered to be metastable, as density functional theory calculations yield positive energy differences with respect to the decomposition into Cu2ZnSnSe4 and ZnSe. Among the conceivable crystal structures for both phases, a distorted zinc-blende structure shows the lowest energy, which is a few tens of meV below the energy of a wurtzite structure. A band gap of 1.1 eV is calculated for both the Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases. Possible effects of these phases on solar cell performance are discussed.

Effect of Ga doping and point defect on magnetism of ZnO

NASA Astrophysics Data System (ADS)

Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Qu, Lingfeng

2017-02-01

The combined influence mechanism of Ga doping and Zn vacancy or O vacancy on magnetism of ZnO is studied using the first-principle calculation. The coexistence of Ga doping and Zn vacancy can achieve a Curie temperature higher than room temperature and the Ga doped ZnO system is a p-type diluted degenerate semiconductor with metalized ferromagnetism. The magnetism of the doping system of Ga doping and Zn vacancy is mainly contributed by double-exchange interaction through the holes of Zn vacancy taking carrier as medium. However, the system of Ga doping and O vacancy is non-magnetic. In the coexistence of Ga doping and Zn vacancy or O vacancy, a close relative distance between doping and vacancy will reduce the formation energy of the doping system but increase the easiness of doping and vacancy, as well as enhance the stability of the doping system.

Interfacial Phenomena in Al/Al, Al/Cu, and Cu/Cu Joints Soldered Using an Al-Zn Alloy with Ag or Cu Additions

NASA Astrophysics Data System (ADS)

Pstruś, Janusz; Gancarz, Tomasz

2014-05-01

The studies of soldered joints were carried out in systems: Al/solder/Al, Al/solder/Cu, Cu/solder/Cu, where the solder was (Al-Zn)EUT, (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Ag and (Al-Zn)EUT with 0.5, 1.0, and 1.5 at.% of Cu addition. Brazing was performed at 500 °C for 3 min. The EDS analysis indicated that the composition of the layers starting from the Cu pad was CuZn, Cu5Zn8, and CuZn4, respectively. Wetting tests were performed at 500 °C for 3, 8, 15, and 30 min, respectively. Thickness of the layers and their kinetics of growth were measured based on the SEM micrographs. The formation of interlayers was not observed from the side of Al pads. On the contrary, dissolution of the Al substrate and migration of Al-rich particles into the bulk of the solder were observed.

Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

NASA Astrophysics Data System (ADS)

Echresh, Ahmad; Chey, Chan Oeurn; Shoushtari, Morteza Zargar; Nur, Omer; Willander, Magnus

2014-11-01

We have fabricated, characterized, and compared ZnO nanorods/p-GaN and n-Zn0.94Ag0.06O nanorods/p-GaN light emitting diodes (LEDs). Current-voltage measurement showed an obvious rectifying behaviour of both LEDs. A reduction of the optical band gap of the Zn0.94Ag0.06O nanorods compared to pure ZnO nanorods was observed. This reduction leads to decrease the valence band offset at n-Zn0.94Ag0.06O nanorods/p-GaN interface compared to n-ZnO nanorods/p-GaN heterojunction. Consequently, this reduction leads to increase the hole injection from the GaN to the ZnO. From electroluminescence measurement, white light was observed for the n-Zn0.94Ag0.06O nanorods/p-GaN heterojunction LEDs under forward bias, while for the reverse bias, blue light was observed. While for the n-ZnO nanorods/p-GaN blue light dominated the emission in both forward and reverse biases. Further, the LEDs exhibited a high sensitivity in responding to UV illumination. The results presented here indicate that doping ZnO nanorods might pave the way to tune the light emission from n-ZnO/p-GaN LEDs.

Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications

DOE PAGES

Park, Kwangwook; Beaton, Daniel; Steirer, Kenneth X.; ...

2017-01-27

Here, we investigate the role of interface initiation conditions on the growth of ZnSe/GaAs heterovalent heterostructures. ZnSe epilayers were grown on a GaAs surface with various degrees of As-termination and the application of either a Zn or Se pre-treatment. Structural analysis revealed that Zn pre-treatment of an As-rich GaAs surface suppresses Ga 2Se 3 formation at the interface and promotes the growth of high crystal quality ZnSe. This is confirmed with low-temperature photoluminescence. However, moderation of Ga-Se bonding through a Se pre-treatment of an As-rich GaAs surface can prevent excessive intermixing at the interface and promote excitonic emission in themore » underlying GaAs layer. These results provide guidance on how best to prepare heterovalent interfaces for various applications.« less

Cs promoted oxidation of Zn and CuZn surfaces: a combined experimental and theoretical study

NASA Astrophysics Data System (ADS)

Chaturvedi, Sanjay; Rodriguez, JoséA.; Hrbek, Jan

1997-07-01

The interaction of O 2 with Zn, {Cs}/{Zn} and {Cs}/{CuZn} surfaces was investigated using photoemission and ab initio self-consistent-field (SCF) calculations. On zinc films, the sticking probability of O 2 is extremely low (10 -3-10 -2), and O 2 exposures in the range of 10 3 to 10 4 langmuirs are necessary to produce a significant adsorption of oxygen and the transformation of metallic zinc into zinc oxide. The presence of sub monolayer coverages of cesium enhances the oxidation rate of zinc by 2-3 orders of magnitude. In the {Cs}/{Zn} system, the alkali atom donates electrons to zinc. This charge transfer facilitates the formation of Zn→O 2 dative bonds and breaking of the OO bond. For the coadsorption of Cs and O 2 on Zn(001), the larger the electron transfer from Zn into the O 2 (1 πg) orbitals, the bigger the adsorption energy of the molecule and the elongation of the OO bond. In general, cesium does not promote the oxidation of copper. In the {Cs}/{CuZn} system, copper withdraws electrons from zinc. The presence of copper in the {Cs}/{CuZn} system inhibits the oxidation of the Zn component compared with the {Cs}/{Zn} system by lowering the electron density on the Zn atoms. After exposing the {Cs}/{CuZn} system to O 2, zinc is oxidized at a rate that is larger than that found for clean CuZn surfaces and smaller than seen in {Cs}/{Zn} surfaces. Molecular hydrogen is found to have no effect on oxidized Cu, Zn and CuZn films. However, atomic hydrogen reduces ZnO to metallic zinc and CuO to Cu 2O. In the oxidized CuZn alloy, CuO is reduced first followed by the reduction of ZnO. A comparison of the behavior of O 2/Cs/Zn and H 2O/Cs/Zn systems shows that while O 2 causes severe oxidation of Cs promoted Zn surfaces, H 2O has little or no effect.

Compositional ratio effect on the surface characteristics of CuZn thin films

NASA Astrophysics Data System (ADS)

Choi, Ahrom; Park, Juyun; Kang, Yujin; Lee, Seokhee; Kang, Yong-Cheol

2018-05-01

CuZn thin films were fabricated by RF co-sputtering method on p-type Si(100) wafer with various RF powers applied on metallic Cu and Zn targets. This paper aimed to determine the morphological, chemical, and electrical properties of the deposited CuZn thin films by utilizing a surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), UV photoelectron spectroscopy (UPS), and a 4-point probe. The thickness of the thin films was fixed at 200 ± 8 nm and the roughness of the thin films containing Cu was smaller than pure Zn thin films. XRD studies confirmed that the preferred phase changed, and this tendency is dependent on the ratio of Cu to Zn. AES spectra indicate that the obtained thin films consisted of Cu and Zn. The high resolution XPS spectra indicate that as the content of Cu increased, the intensities of Zn2+ decreased. The work function of CuZn thin films increased from 4.87 to 5.36 eV. The conductivity of CuZn alloy thin films was higher than pure metallic thin films.

Hetero-metal cation control of CuO nanostructures and their high catalytic performance for CO oxidation

NASA Astrophysics Data System (ADS)

Huang, Hongwen; Zhang, Liqiang; Wu, Kewei; Yu, Qing; Chen, Ru; Yang, Hangsheng; Peng, Xinsheng; Ye, Zhizhen

2012-11-01

A controllable synthesis of various morphologies of CuO nanostructures with tuning by hetero-metal cations has been developed in aqueous solution at room temperature. The morphologies of CuO can be engineered from nanosheets to nanoparticles with different length ratios of the long axis to the short axis. The formation of many metal-ion complexes plays an important role in slowing the release rate of OH- and affects the reaction kinetics further. We found that the effect of hetero-metal cations on the final morphology of the CuO nanostructures was the same as that of the cooling temperature. A series of temperature-controlled experiments demonstrated this. Furthermore, among all the synthesized CuO nanostructures, the fascinating colloidal mesoporous CuO quasi-monocrystalline nanosheets prepared at 25 °C with a thickness of ca. 10 nm and large specific surface area of 80.32 m2 g-1 is investigated intensively. These CuO nanosheets demonstrate a superior catalytic activity for CO oxidation, with features of high CO conversion efficiency (47.77 mmolCO g-1CuO h-1 at 200 °C), which is close to that reported for previously investigated supported-CuO catalysts, and a low apparent activation energy Ea (53.3 kJ mol-1).A controllable synthesis of various morphologies of CuO nanostructures with tuning by hetero-metal cations has been developed in aqueous solution at room temperature. The morphologies of CuO can be engineered from nanosheets to nanoparticles with different length ratios of the long axis to the short axis. The formation of many metal-ion complexes plays an important role in slowing the release rate of OH- and affects the reaction kinetics further. We found that the effect of hetero-metal cations on the final morphology of the CuO nanostructures was the same as that of the cooling temperature. A series of temperature-controlled experiments demonstrated this. Furthermore, among all the synthesized CuO nanostructures, the fascinating colloidal mesoporous CuO quasi-monocrystalline nanosheets prepared at 25 °C with a thickness of ca. 10 nm and large specific surface area of 80.32 m2 g-1 is investigated intensively. These CuO nanosheets demonstrate a superior catalytic activity for CO oxidation, with features of high CO conversion efficiency (47.77 mmolCO g-1CuO h-1 at 200 °C), which is close to that reported for previously investigated supported-CuO catalysts, and a low apparent activation energy Ea (53.3 kJ mol-1). Electronic supplementary information (ESI) available: Raman spectrum of Zn2Cu2 prepared at 25 °C (Fig. S1); content ratios of Zn/Cu for Zn2Cu2, Zn4Cu2 and Zn6Cu2 samples prepared at 25 °C measured by ICP-MS (Table S1); representative TEM images of Cu2, Zn2Cu2, Zn4Cu2 and Zn6Cu2 samples prepared at 25 °C (Fig. S2); size distributions along two perpendicular directions for Cu2, Zn2Cu2, Zn4Cu2 and Zn6Cu2 samples prepared at 25 °C (Fig. S3); the characteristic parameters of Cu2, Zn2Cu2, Zn4Cu2 and Zn6Cu2 samples prepared at 25 °C (Table S2); the characteristic parameters of Cu2, Zn2Cu2, Zn4Cu2 and Zn6Cu2 samples prepared at 35 °C (Table S3); SEM images of Zn2Cu2 products prepared at 20 °C, 25 °C, 30 °C and 50 °C (Fig. S4); the characteristic parameters of Zn2Cu2 prepared at 20 °C, 25 °C, 30 °C and 50 °C (Table S4); pH values of Cu2, Zn2Cu2, Zn4Cu2 and Zn6Cu2 solution without adding 1.6 mmol AE aqueous solution at 25 °C (Table S5); SEM images of Ag2Cu2, Mg2Cu2, Al2Cu2 prepared at 25 °C and EDS spectrum of Al2Cu2 (Fig. S5); the characteristic parameters of Cu2, Zn2Cu2, Ag2Cu2, Mg2Cu2 and Al2Cu2 samples prepared at 25 °C (Table S6); UV-Vis spectrum of Cu2 nanosheets prepared at 25 °C (Fig. S6); photograph of the Tyndall effect for the Cu2 solution prepared at 25 °C and UV-Vis absorption changes of Evans blue solutions after filtering the 80 ml Cu2 solution products (Fig. S7); FTIR spectrum of Cu2 nanosheets prepared at 25 °C (Fig. S8); Cu2p XPS spectrum of Cu2 nanosheets prepared at 25 °C (Fig. S9); detailed reaction rates of catalytic CO oxidation at different temperatures (Table S7); XRD pattern and SEM image of Cu2 sample after 6 hours of catalytic reaction (Fig. S10); nitrogen adsorption-desorption isotherms at 77 K of Zn4Cu2 prepared at 25 °C (Fig. S11). See DOI: 10.1039/c2nr32729e

Ion Beam Facility at the University of Chile; Applications and Basic Research

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miranda, P. A.; Morales, J. R.; Cancino, S.

2010-08-04

The main characteristics of the ion beam facility based on a 3.75 MeV Van de Graaff accelerator at the University of Chile are described at this work. Current activities are mainly focused on the application of the Ion Beam Analysis techniques for environmental, archaeological, and material science analysis. For instance, Rutherford Backscattering Spectrometry (RBS) is applied to measure thin gold film thickness which are used to determine their resistivity and other electrical properties. At this laboratory the Proton Induced X-Ray Emission (PIXE) and Proton Elastic Scattering Analysis (PESA) methodologies are extensively used for trace element analysis of urban aerosols (Santiago,more » Ciudad de Mexico). A similar study is being carried out at the Antarctica Peninsula. Characterization studies on obsidian and vitreous dacite samples using PIXE has been also perform allowing to match some of these artifacts with geological source sites in Chile.Basic physics research is being carried out by measuring low-energy cross section values for the reactions {sup 63}Cu(d,p){sup 64}Cu and {sup Nat}Zn(p,x){sup 67}Ga. Both radionuclide {sup 64}Cu and {sup 67}Ga are required for applications in medicine. Ongoing stopping power cross section measurements of proton and alphas on Pd, Cu, Bi and Mylar are briefly discussed.« less

Ion Beam Facility at the University of Chile; Applications and Basic Research

NASA Astrophysics Data System (ADS)

Miranda, P. A.; Morales, J. R.; Cancino, S.; Dinator, M. I.; Donoso, N.; Sepúlveda, A.; Ortiz, P.; Rojas, S.

2010-08-01

The main characteristics of the ion beam facility based on a 3.75 MeV Van de Graaff accelerator at the University of Chile are described at this work. Current activities are mainly focused on the application of the Ion Beam Analysis techniques for environmental, archaeological, and material science analysis. For instance, Rutherford Backscattering Spectrometry (RBS) is applied to measure thin gold film thickness which are used to determine their resistivity and other electrical properties. At this laboratory the Proton Induced X-Ray Emission (PIXE) and Proton Elastic Scattering Analysis (PESA) methodologies are extensively used for trace element analysis of urban aerosols (Santiago, Ciudad de Mexico). A similar study is being carried out at the Antarctica Peninsula. Characterization studies on obsidian and vitreous dacite samples using PIXE has been also perform allowing to match some of these artifacts with geological source sites in Chile. Basic physics research is being carried out by measuring low-energy cross section values for the reactions 63Cu(d,p)64Cu and NatZn(p,x)67Ga. Both radionuclide 64Cu and 67Ga are required for applications in medicine. Ongoing stopping power cross section measurements of proton and alphas on Pd, Cu, Bi and Mylar are briefly discussed.

Fabrication and characterization of oxide-based thin film transistors, and process development for oxide heterostructures

NASA Astrophysics Data System (ADS)

Lim, Wantae

2009-12-01

This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d 10ns0 (n≥4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO 2) system is demonstrated. The deposition and characterization of oxide semiconductors (In 2O3-ZnO, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (<100°C) exhibit good electrical properties: the saturation mobility of 5--12 cm2.V-1.s-1 and threshold voltage of 0.5--2.5V. The devices are also examined as a function of aging time in order to verify long-term stability in air. The effect of gate dielectric materials on electrical properties of InGaZnO 4-based TFTs was investigated. The use of SiNx film as a gate dielectric reduces the trap density and the roughness at the channel/gate dielectric interface compared to SiO2 gate dielectric, resulting in an improvement of device parameters by reducing scattering of trapped charges at the interface. The quality of interface is shown to have large effect on TFT performance. Plasma etching process of ZnO was carried out using a variety of plasma chemistries: CH4/H2-, C2H6/H 2-, Cl2-, IBr-, ICl-, BI3- and BBr3/Ar. High fidelity pattern transfer can be achieved with practical etch rate and very smooth surface in methane-based chemistries, although the sidewall is not completely vertical. Threshold energy as low as 60 +/- 20 eV for all plasma chemistries was achieved, confirming that etching is driven by ion-assisted mechanism over the whole range of ion energy. Ohmic contacts to p-CuCrO2 are examined using borides (CrB2 and W2B5), nitrides (TaN and ZrN) and a high temperature metal (Ir). These materials are used as a diffusion barrier in Ni/Au based contacts, i.e., Ni/Au/X/Ti/Au metallization scheme, where X is the refractory material. A minimum specific contact resistance of ˜ 5x10 -4 O.cm2 was achieved for the Ir-containing contacts after annealing at temperature of 500--800°C for 60s in O2 ambient. The presence of Ir diffusion barrier increase the thermal stability of the contacts by ˜ 200 °C compared to conventional Ni/Au contacts. By sharp contrast, the use of other refractory materials led to the poorer thermal stability, with the contact resistance increasing sharply above 400°C.

Comparative study of textured and epitaxial ZnO films

NASA Astrophysics Data System (ADS)

Ryu, Y. R.; Zhu, S.; Wrobel, J. M.; Jeong, H. M.; Miceli, P. F.; White, H. W.

2000-06-01

ZnO films were synthesized by pulsed laser deposition (PLD) on GaAs and α-Al 2O 3 substrates. The properties of ZnO films on GaAs and α-Al 2O 3 have been investigated to determine the differences between epitaxial and textured ZnO films. ZnO films on GaAs show very strong emission features associated with exciton transitions as do ZnO films on α-Al 2O 3, while the crystalline structural qualities for ZnO films on α-Al 2O 3 are much better than those for ZnO films on GaAs. The properties of ZnO films are studied by comparing highly oriented, textured ZnO films on GaAs with epitaxial ZnO films on α-Al 2O 3 synthesized along the c-axis.

X-ray photoelectron spectroscopy investigations of band offsets in Ga0.02Zn0.98O/ZnO heterojunction for UV photodetectors

NASA Astrophysics Data System (ADS)

Singh, Karmvir; Rawal, Ishpal; Punia, Rajesh; Dhar, Rakesh

2017-10-01

Here, we report the valence and conduction band offset measurements in pure ZnO and the Ga0.02Zn0.98O/ZnO heterojunction by X-Ray photoelectron spectroscopy studies for UV photodetector applications. For detailed investigations on the band offsets and UV photodetection behavior of Ga0.02Zn0.98O/ZnO heterostructures, thin films of pristine ZnO, Ga-doped ZnO (Ga0.02Zn0.98O), and heterostructures of Ga-doped ZnO with ZnO (Ga0.02Zn0.98O/ZnO) were deposited using a pulsed laser deposition technique. The deposited thin films were characterized by X-ray diffraction, atomic force microscopy, and UV-Vis spectroscopy. X-ray photoelectron spectroscopy studies were carried out on all the thin films for the investigation of valence and conduction band offsets. The valence band was found to be shifted by 0.28 eV, while the conduction band has a shifting of -0.272 eV in the Ga0.02Zn0.98O/ZnO heterojunction as compared to pristine ZnO thin films. All the three samples were analyzed for photoconduction behavior under UVA light of the intensity of 3.3 mW/cm2, and it was observed that the photoresponse of pristine ZnO (19.75%) was found to increase with 2 wt. % doping of Ga (22.62%) and heterostructured thin films (29.10%). The mechanism of UV photodetection in the deposited samples has been discussed in detail, and the interaction of chemisorbed oxygen on the ZnO surface with holes generated by UV light exposure has been the observed mechanism for the change in electrical conductivity responsible for UV photoresponse on the present deposited ZnO films.

Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

DOEpatents

Albin, David S.; Carapella, Jeffrey J.; Tuttle, John R.; Contreras, Miguel A.; Gabor, Andrew M.; Noufi, Rommel; Tennant, Andrew L.

1995-07-25

A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se.sub.2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se.sub.2 :Cu.sub.x Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550.degree. C.) at which Cu(In,Ga)Se.sub.2 is solid and Cu.sub.x Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cu.sub.x Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cu.sub.x (In,Ga).sub.y Se.sub.z. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se.sub.2 :Cu.sub.x Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450.degree. C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100.degree. C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.

Optimization of Cu-Zn Massive Sulphide Flotation by Selective Reagents

NASA Astrophysics Data System (ADS)

Soltani, F.; Koleini, S. M. J.; Abdollahy, M.

2014-10-01

Selective floatation of base metal sulphide minerals can be achieved by using selective reagents. Sequential floatation of chalcopyrite-sphalerite from Taknar (Iran) massive sulphide ore with 3.5 % Zn and 1.26 % Cu was studied. D-optimal design of response surface methodology was used. Four mixed collector types (Aer238 + SIPX, Aero3477 + SIPX, TC1000 + SIPX and X231 + SIPX), two depressant systems (CuCN-ZnSO4 and dextrin-ZnSO4), pH and ZnSO4 dosage were considered as operational factors in the first stage of flotation. Different conditions of pH, CuSO4 dosage and SIPX dosage were studied for sphalerite flotation from first stage tailings. Aero238 + SIPX induced better selectivity for chalcopyrite against pyrite and sphalerite. Dextrin-ZnSO4 was as effective as CuCN-ZnSO4 in sphalerite-pyrite depression. Under optimum conditions, Cu recovery, Zn recovery and pyrite content in Cu concentrate were 88.99, 33.49 and 1.34 % by using Aero238 + SIPX as mixed collector, CuCN-ZnSO4 as depressant system, at ZnSO4 dosage of 200 g/t and pH 10.54. When CuCN was used at the first stage, CuSO4 consumption increased and Zn recovery decreased during the second stage. Maximum Zn recovery was 72.19 % by using 343.66 g/t of CuSO4, 22.22 g/t of SIPX and pH 9.99 at the second stage.

Mineralogical and geochemical characterization of weathering profiles developed on mylonites in the Fodjomekwet-Fotouni section of the Cameroon Shear Zone (CSZ), West Cameroon

NASA Astrophysics Data System (ADS)

Tematio, P.; Tchaptchet, W. T.; Nguetnkam, J. P.; Mbog, M. B.; Yongue Fouateu, R.

2017-07-01

The mineralogical and geochemical investigation of mylonitic weathering profiles in Fodjomekwet-Fotouni was done to better trace the occurrence of minerals and chemical elements in this area. Four representative soil profiles were identified in two geomorphological units (upland and lowland) differentiating three weathering products (organo-mineral, mineral and weathered materials). Weathering of these mylonites led to some minerals association such as vermiculite, kaolinite, goethite, smectite, halloysite, phlogopite and gibbsite. The minerals in a decreasing order of abundance are: quartz (24.2%-54.8%); kaolinite (8.4%-36.0%); phlogopite (5.5%-21.9%); goethite (7.8%-16.1%); vermiculite (6.7%-15.7%); smectite (10.2%-11.9%); gibbsite (9.0%-11.8%) and halloysite (5.6%-11.5%) respectively. Patterns of chemical elements allow highlighting three behaviors (enriched elements, depleted elements and elements with complex behavior), depending on the landscape position of the profiles. In the upland weathering products, K, Cr and REEs are enriched; Ca, Mg, Na, Mn, Rb, S and Sr are depleted while Si, Al, Fe, Ti, Ba, Co, Cu, Ga, Mo, Nb, Ni, Pb, Sc, V, Y, Zn and Zr portray a complex behavior. Contrarily, the lowland weathering profiles enriched elements are Fe, Ti, Co, Cr, Cu, V, Zr, Pr, Sm, Tb, Dy, Er and Yb; while depleted elements are Ca, Mg, K, Na, Mn, Ba, Ga, S, Sr, Y, Zn, La, Ce and Nd; and Si, Al, Mo, Nb, Ni, Pb, Rb, Sc evidenced complex behaviors. In all the studied weathering products, the REEs fractionation was also noticeable with a landscape-position dependency, showing light REEs (LREEs) enrichment in the upland areas and heavy REEs (HREEs) in lowland areas. SiO2, Al2O3 and Fe2O3 are positively correlated with most of the traces and REEs (Co, Cu, Nb, Ni, Mo, Pb, Sc, V, Zn, Zr, La, Ce, Sm, Tb, Dy, Er, Yb), pointing to the fact that they may be incorporated into newly formed clay minerals and oxides. Ba, Cr, Ga, Rb, S, Sr, Y, Pr and Nd behave like alkalis and alkaline earths, and are thus highly mobile during weathering.

Synthesis of ZnO/CuO and TiO{sub 2}/CuO nanocomposites for light and ultrasound assisted degradation of a textile dye in aqueous solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzakki, Afifah; Shabrany, Hesni; Saleh, Rosari, E-mail: rosari.saleh@gmail.com, E-mail: rosari.saleh@ui.ac.id

2016-04-19

ZnO/CuO and TiO2/CuO nanocomposites with different Zn/Cu and Ti/Cu ratios were prepared using sol-gel method. The obtained composite samples were used as catalyst. Methylene blue was used as a model of textile dye to evaluate their photocatalytic, sonocatalytic and photosonocatalytic activities. X-ray diffraction and energy dispersive X- ray analysis confirmed that only monoclinic CuO and hexagonal wurtzite ZnO structures are present in ZnO/CuO nanocomposites, while in TiO2/CuO nanocomposites monoclinic CuO and anatase TiO2 structures were observed. The degradation of methylene blue indicated that the incorporation of CuO in ZnO/CuO and TiO2/CuO nanocomposites exhibited an appreciable higher photocatalytic activity, which wasmore » mainly attributed to the extended photoresponding range and more light energy could be utilized than pure ZnO and TiO2.« less

Method of bonding metals to ceramics

DOEpatents

Maroni, Victor A.

1992-01-01

A method of forming a composite by providing a ceramic capable of having zero electrical resistance and complete diamagnetism at superconducting temperatures, bonding a thin layer of Ag, Au or alloys thereof with the ceramic. Thereafter, there is bonded a first metal to the ceramic surface at a temperature less than about 400.degree. C., and then a second metal is bonded to the first metal at a temperature less than about 400.degree. C. to form a composite wherein the first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Ti and alloys thereof and wherein the second metal is selected from the class consisting of Al, Cu, Pb and Zn and alloys thereof.

Effect of PdZn film on the performance of green light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Ja-Yeon; Kwon, Min-Ki; Cho, Chu Young; Lee, Sang-Jun; Park, Seong-Ju; Kim, Sunwoon; Kim, Je Won; Kim, Yong Chun

2008-08-01

PdZn was used to improve the electrical properties of p-GaN annealed at low activation temperature for high efficiency green light-emitting diodes (LEDs). A hole concentration of p-GaN annealed at 600 °C with PdZn was almost 28 times higher than that of p-GaN annealed at 800 °C without PdZn. SIMS analysis showed that hydrogen concentration in p-GaN annealed with PdZn is decreased compared to that without using PdZn because the PdZn enhances hydrogen desorption from the Mg-doped p-GaN film at low temperature. The green MQW LED annealed at 600 °C using PdZn showed improved electrical characteristic and optical output power compared to that annealed at 800 °C without using PdZn. These results are attributed to the increase of hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and the decrease in thermal damage of MQW at low activation temperature.

Variation in copper and zinc tolerance and accumulation in 12 willow clones: implications for phytoextraction*

PubMed Central

Yang, Wei-dong; Wang, Yu-yan; Zhao, Feng-liang; Ding, Zhe-li; Zhang, Xin-cheng; Zhu, Zhi-qiang; Yang, Xiao-e

2014-01-01

Willows (Salix spp.) have shown high potential for the phytoextraction of heavy metals. This study compares variations in copper (Cu) and zinc (Zn) tolerance and accumulation potential among 12 willow clones grown in a nutrient solution treated with 50 μmol/L of Cu or Zn, respectively. The results showed differences in the tolerance and accumulation of Cu and Zn with respect to different species/clones. The biomass variation among clones in response to Cu or Zn exposure ranged from the stimulation of growth to inhibition, and all of the clones tested showed higher tolerance to Cu than to Zn. The clones exhibited less variation in Cu accumulation but larger variation in Zn accumulation. Based on translocation factors, it was found that most of the Cu was retained in the roots and that Zn was more mobile than Cu for all clones. It is concluded that most willow clones are good accumulators of Zn and Cu. PMID:25183033

Electrodeposition of CuZn Alloys from the Non-Cyanide Alkaline Baths

NASA Astrophysics Data System (ADS)

Li, Minggang; Wei, Guoying; Hu, Shuangshuang; Xu, Shuhan; Yang, Yejiong; Miao, Qinfang

2015-10-01

Effect of copper sulfate on CuZn alloys electroplating from non-cyanide baths are investigated by different electrochemical methods. Cyclic voltammetry and current transient measurements are used to characterize the CuZn alloys electroplating system in order to analyze the nucleation and growth mechanism. The reduction of Cu and CuZn alloy on sheet iron substrates shows an instantaneous nucleation process. However, the reduction of Zn on sheet iron substrates shows a progressive nucleation process. The structure and surface morphology of CuZn alloys are analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The morphology of CuZn alloys obtained with 50 g L-1 copper sulfate presents a smooth and compact deposit and the size of crystal particle is uniform.

Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties

NASA Astrophysics Data System (ADS)

Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

2016-06-01

Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities. Electronic supplementary information (ESI) available: Synthesis and TEM images of pure ZnO nanocrystals. Photocatalytic testing procedures and degradation curves. SEM and TEM images, SAED pattern and EDS spectra and maps of parts of Cu-ZnO hybrid samples. A schematic image of coincident lattice matching between Cu and ZnO. STEM-EDS elemental maps and XRD pattern of the Cu@CuNi-ZnO sample. Comparative synthetic parameters. See DOI: 10.1039/c6nr02055k

Nuclear Data Sheets for A = 80

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Balraj

Nuclear spectroscopic information for known nuclides of mass number 80 (Cu,Zn,Ga,Ge,As,Se,Br,Kr,Rb,Sr,Y,Zr) with Z = 29 to 40 and N = 51 to 40 have been evaluated and presented together with adopted energies and J{pi} of levels in these nuclei. No excited state data are yet available for {sup 80}Cu and {sup 80}Zn. In {sup 80}Sr, four superdeformed bands have been reported. The half-life of fully-ionized {sup 80}Y isomer at 228.5 keV has been measured as 6.8 s 5, as compared to 4.8 s 3 for the neutral atom. This evaluation supersedes previous full evaluations of A = 80 published bymore » 1982Si20 and 1975Gr19, a midstream evaluation of A = 80 published in 'up-date mode' by 1992Si19, and an update of {sup 80}Y nuclide for ENSDF by J.K. Tuli in August 2003.« less

Effects of dietary zinc, iron, and copper in layer feed on distribution of these elements in eggs, liver, excreta, soil, and herbage.

PubMed

Skrivan, M; Skrivanová, V; Marounek, M

2005-10-01

An experiment was conducted to evaluate the effect of dietary content and combinations of Zn, Fe, and Cu on deposition of these elements in egg components, liver, and excreta. Excreta were applied as a manure to a lawn, and 3 mo later soil and herbage samples were taken and analyzed. The experiment comprised 144 hens in 8 groups. The basal diet contained Zn, Fe, and Cu at 63.4, 92.8, and 9.0 mg/kg, respectively. It was supplemented with 1, 2, or 3 trace elements (inorganic forms) at 80 mg of Zn/kg, 120 mg of Fe/kg, and 25 mg of Cu/kg. Recovery of Zn, Fe, and Cu in eggs of hens fed the basal diet was 10.7, 9.8, and 4.4% of the alimentary intake, respectively. A Zn-Cu antagonism was observed; deposition of Zn in the yolk was significantly decreased by Cu addition and vice versa (P < 0.01). Supplementation of the basal diet with Fe increased Fe concentration in egg yolk and white by 6.3 and 2.2%, respectively. The combination of Fe with Zn and Cu, however, increased Fe concentration in the yolk and white by 36.7 and 34.9%, respectively (P < 0.01). The enrichment of eggs with the other elements was marginal (Cu) or absent (Zn). Effects of Zn, Fe, and Cu of the basal diet on liver concentrations of these elements were relatively small, and no antagonism between Zn and Cu was apparent. Supplementation of the basal diet with the combination of Zn and Fe, however, significantly decreased hepatic concentration of Cu. On the other hand, Cu supplementation significantly increased Fe concentration in livers of hens fed the Fe-supplemented diet (P < 0.01). Concentrations of Zn, Fe, and Cu in excreta were related to their dietary content. High concentrations of Zn, Fe, and Cu in excreta corresponded with limited deposition of the 3 elements in eggs and liver. Concentrations of Zn, Fe, and Cu in herbage correlated significantly with the supply of these elements by hen excreta into soil. The Zn supplied by hen excreta was more stable than Fe and Cu; thus Zn could accumulate in the soil.

Volatilization, transport and sublimation of metallic and non-metallic elements in high temperature gases at Merapi Volcano, Indonesia

USGS Publications Warehouse

Symonds, R.B.; Rose, William I.; Reed, M.H.; Lichte, F.E.; Finnegan, David L.

1987-01-01

Condensates, silica tube sublimates and incrustations were sampled from 500-800??C fumaroles and lava samples were collected at Merapi Volcano, Indonesia in Jan.-Feb., 1984. With respect to the magma, Merapi gases are enriched by factors greater than 105 in Se, Re, Bi and Cd; 104-105 in Au, Br, In, Pb and W; 103-104 in Mo, Cl, Cs, S, Sn and Ag; 102-103 in As, Zn, F and Rb; and 1-102 in Cu, K, Na, Sb, Ni, Ga, V, Fe, Mn and Li. The fumaroles are transporting more than 106 grams/day ( g d) of S, Cl and F; 104-106 g/d of Al, Br, Zn, Fe, K and Mg; 103-104 g d of Pb, As, Mo, Mn, V, W and Sr; and less than 103 g d of Ni, Cu, Cr, Ga, Sb, Bi, Cd, Li, Co and U. With decreasing temperature (800-500??C) there were five sublimate zones found in silica tubes: 1) cristobalite and magnetite (first deposition of Si, Fe and Al); 2) K-Ca sulfate, acmite, halite, sylvite and pyrite (maximum deposition of Cl, Na, K, Si, S, Fe, Mo, Br, Al, Rb, Cs, Mn, W, P, Ca, Re, Ag, Au and Co); 3) aphthitalite (K-Na sulfate), sphalerite, galena and Cs-K. sulfate (maximum deposition of Zn, Bi, Cd, Se and In; higher deposition of Pb and Sn); 4) Pb-K chloride and Na-K-Fe sulfate (maximum deposition of Pb, Sn and Cu); and 5) Zn, Cu and K-Pb sulfates (maximum deposition of Pb, Sn, Ti, As and Sb). The incrustations surrounding the fumaroles are also chemically zoned. Bi, Cd, Pb, W, Mo, Zn, Cu, K, Na, V, Fe and Mn are concentrated most in or very close to the vent as expected with cooling, atmospheric contamination and dispersion. The highly volatile elements Br, Cl, As and Sb are transported primarily away from high temperature vents. Ba, Si, P, Al, Ca and Cr are derived from wall rock reactions. Incomplete degassing of shallow magma at 915??C is the origin of most of the elements in the Merapi volcanic gas, although it is partly contaminated by particles or wall rock reactions. The metals are transported predominantly as chloride species. As the gas cools in the fumarolic environment, it becomes saturated with sublimate phases that fractionate from the gas in the order of their equilibrium saturation temperatures. Devolatilization of a cooling batholith could transport enough acids and metals to a hydrothermal system to play a significant role in forming an ore deposit. However, sublimation from a high temperature, high velocity carrier gas is not efficient enough to form a large ore deposit. Re, Se, Cd and Bi could be used as supporting evidence for magmatic fluid transport in an ore deposit. ?? 1987.

Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization

DOEpatents

Tuttle, John R.; Contreras, Miguel A.; Noufi, Rommel; Albin, David S.

1994-01-01

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization

DOEpatents

Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

1994-10-18

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots

PubMed Central

2017-01-01

In this work, we demonstrate that a preferential Ga-for-Zn cation exchange is responsible for the increase in photoluminescence that is observed when gallium oleate is added to InZnP alloy QDs. By exposing InZnP QDs with varying Zn/In ratios to gallium oleate and monitoring their optical properties, composition, and size, we conclude that Ga3+ preferentially replaces Zn2+, leading to the formation of InZnP/InGaP core/graded-shell QDs. This cation exchange reaction results in a large increase of the QD photoluminescence, but only for InZnP QDs with Zn/In ≥ 0.5. For InP QDs that do not contain zinc, Ga is most likely incorporated only on the quantum dot surface, and a PL enhancement is not observed. After further growth of a GaP shell and a lattice-matched ZnSeS outer shell, the cation-exchanged InZnP/InGaP QDs continue to exhibit superior PL QY (over 70%) and stability under long-term illumination (840 h, 5 weeks) compared to InZnP cores with the same shells. These results provide important mechanistic insights into recent improvements in InP-based QDs for luminescent applications. PMID:28706347

Structural and elemental characterization of high efficiency Cu2ZnSnS4 solar cells

NASA Astrophysics Data System (ADS)

Wang, Kejia; Shin, Byungha; Reuter, Kathleen B.; Todorov, Teodor; Mitzi, David B.; Guha, Supratik

2011-01-01

We have carried out detailed microstructural studies of phase separation and grain boundary composition in Cu2ZnSnS4 based solar cells. The absorber layer was fabricated by thermal evaporation followed by post high temperature annealing on hot plate. We show that inter-reactions between the bottom molybdenum and the Cu2ZnSnS4, besides triggering the formation of interfacial MoSx, results in the out-diffusion of Cu from the Cu2ZnSnS4 layer. Phase separation of Cu2ZnSnS4 into ZnS and a Cu-Sn-S compound is observed at the molybdenum-Cu2ZnSnS4 interface, perhaps as a result of the compositional out-diffusion. Additionally, grain boundaries within the thermally evaporated absorber layer are found to be either Cu-rich or at the expected bulk composition. Such interfacial compound formation and grain boundary chemistry likely contributes to the lower than expected open circuit voltages observed for the Cu2ZnSnS4 devices.

Method of bonding metals to ceramics

DOEpatents

Maroni, V.A.

1991-04-23

A ceramic or glass having a thin layer of silver, gold or alloys thereof at the surface thereof is disclosed. A first metal is bonded to the thin layer and a second metal is bonded to the first metal. The first metal is selected from the class consisting of In, Ga, Sn, Bi, Zn, Cd, Pb, Tl and alloys thereof, and the second metal is selected from the class consisting of Cu, Al, Pb, Au and alloys thereof. 3 figures.

Hydrogenation of CO 2 on ZnO/Cu(100) and ZnO/Cu(111) Catalysts: Role of Copper Structure and Metal–Oxide Interface in Methanol Synthesis

DOE PAGES

Palomino, Robert M.; Ramirez, Pedro J.; Liu, Zongyuan; ...

2017-08-21

The results of kinetic tests and ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) show the important role played by a ZnO–copper interface in the generation of CO and the synthesis of methanol from CO 2 hydrogenation. The deposition of nanoparticles of ZnO on Cu(100) and Cu(111), θ oxi < 0.3 monolayer, produces highly active catalysts. The catalytic activity of these systems increases in the sequence: Cu(111) < Cu(100) < ZnO/Cu(111) < ZnO/Cu(100). The structure of the copper substrate influences the catalytic performance of a ZnO–copper interface. Furthermore, size and metal–oxide interactions affect the chemical and catalytic properties of the oxide making themore » supported nanoparticles different from bulk ZnO. The formation of a ZnO–copper interface favors the binding and conversion of CO 2 into a formate intermediate that is stable on the catalyst surface up to temperatures above 500 K. Alloys of Zn with Cu(111) and Cu(100) were not stable at the elevated temperatures (500–600 K) used for the CO 2 hydrogenation reaction. However, reaction with CO 2 oxidized the zinc, enhancing its stability over the copper substrates.« less

Hydrogenation of CO 2 on ZnO/Cu(100) and ZnO/Cu(111) Catalysts: Role of Copper Structure and Metal–Oxide Interface in Methanol Synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palomino, Robert M.; Ramirez, Pedro J.; Liu, Zongyuan

The results of kinetic tests and ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) show the important role played by a ZnO–copper interface in the generation of CO and the synthesis of methanol from CO 2 hydrogenation. The deposition of nanoparticles of ZnO on Cu(100) and Cu(111), θ oxi < 0.3 monolayer, produces highly active catalysts. The catalytic activity of these systems increases in the sequence: Cu(111) < Cu(100) < ZnO/Cu(111) < ZnO/Cu(100). The structure of the copper substrate influences the catalytic performance of a ZnO–copper interface. Furthermore, size and metal–oxide interactions affect the chemical and catalytic properties of the oxide making themore » supported nanoparticles different from bulk ZnO. The formation of a ZnO–copper interface favors the binding and conversion of CO 2 into a formate intermediate that is stable on the catalyst surface up to temperatures above 500 K. Alloys of Zn with Cu(111) and Cu(100) were not stable at the elevated temperatures (500–600 K) used for the CO 2 hydrogenation reaction. However, reaction with CO 2 oxidized the zinc, enhancing its stability over the copper substrates.« less

Effects of swift heavy ion irradiation on structural, optical and photocatalytic properties of ZnO–CuO nanocomposites prepared by carbothermal evaporation method

PubMed Central

Kuriakose, Sini; Avasthi, D K

2015-01-01

Summary ZnO–CuO nanocomposite thin films were prepared by carbothermal evaporation of ZnO and Cu, combined with annealing. The effects of 90 MeV Ni7+ ion irradiation on the structural and optical properties of ZnO–CuO nanocomposites were studied by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV–visible absorption spectroscopy and Raman spectroscopy. XRD studies showed the presence of ZnO and CuO nanostructures in the nanocomposites. FESEM images revealed the presence of nanosheets and nanorods in the nanocomposites. The photocatalytic activity of ZnO–CuO nanocomposites was evaluated on the basis of degradation of methylene blue (MB) and methyl orange (MO) dyes under sun light irradiation and it was observed that swift heavy ion irradiation results in significant enhancement in the photocatalytic efficiency of ZnO–CuO nanocomposites towards degradation of MB and MO dyes. The possible mechanism for the enhanced photocatalytic activity of ZnO–CuO nanocomposites is proposed. We attribute the observed enhanced photocatalytic activity of ZnO–CuO nanocomposites to the combined effects of improved sun light utilization and suppression of the recombination of photogenerated charge carriers in ZnO–CuO nanocomposites. PMID:25977864

Biomonitoring of 30 trace elements in urine of children and adults by ICP-MS.

PubMed

Heitland, Peter; Köster, Helmut D

2006-03-01

The paper provides physicians and clinical chemists with statistical data (concentration ranges, geometric mean values, selected percentiles, etc.) about 30 urinary trace elements in order to determine whether people have trace element deficiencies or have been exposed to higher elemental concentrations. Morning urine samples of 72 children and 87 adults from two geographical areas of Germany were collected and the elements Li, Be, V, Cr, Mn, Ni, Co, Cu, Zn, Ga, As, Se, Rb, Sr, Mo, Rh, Pd, Ag, Cd, In, Sn, Sb, Cs, Ba, Pt, Au, Pb, Tl, Bi and U were determined by inductively coupled plasma mass spectrometry (ICP-MS) with a new octopole based collision/reaction cell. The urine samples were analysed directly after a simple 1/5 (V/V) dilution with deionised water and nitric acid. Information on exposure conditions of all human subjects were collected by questionnaire-based interviews. The described concentration data down to the ng/l range are very useful for the formulation of reference values. For some elements either new data are described (e.g., for V, Ga, In, Bi, Rh, Mn) or differences to earlier studies were found (e.g., for Be, As). For other elements (e.g., Sb, Se, Mo, Ba, Cu, Zn, Li) our results are in good correlation with previous studies and also complemented with urinary trace element concentrations for children.

Fast and cost-effective cyclotron production of 61Cu using a natZn liquid target: an opportunity for radiopharmaceutical production and R&D.

PubMed

do Carmo, S J C; Alves, V H P; Alves, F; Abrunhosa, A J

2017-10-31

Following our previous work on the production of radiometals, such as 64 Cu and 68 Ga, through the irradiation of liquid targets using a medical cyclotron, we describe in this paper a technique to produce 61 Cu through the irradiation of natural zinc using a liquid target. The proposed method is very cost-effective, as it avoids the use of expensive enriched material, and is fast, as a purified solution of 61 CuCl 2 is obtained in less than 30 min after the end of beam. Considering its moderate half-life of 3.33 h and favourable decay properties as a positron emitter, 61 Cu is a very attractive nuclide for the labelling of PET tracers for pre-clinical and clinical use with PET as well as to support the intense R&D programmes being carried out worldwide by taking advantage of the rich and versatile chemistry of copper.

Luminescence studies of laser MBE grown GaN on ZnO nanostructures

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Kapoor, Ashok K.; Tandon, R. P.; Gupta, Vinay

2017-08-01

GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE) technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si (100) substrates. The ZnO nanostructures were grown on Si (100) substrate using high pressure assisted Pulsed laser deposition technique in inert gas ambience. Discrete nanostructured morphology of ZnO was obtained using the PLD growth on Si substrates. Photoluminescence studies performed on the prepared GaN/Sapphire and GaN/ZnO-NS/Si systems, revealed a significant PL enhancement in case of GaN/ZnO-NS/Si system compared to the former. The hexagonal nucleation sites provided by the ZnO nanostructures strategically enhanced the emission of GaN film grown by Laser MBE Technique at relatively lower temperature of 700°C. The obtained results are attractive for the realization of highly luminescent GaN films on Si substrate for photonic devices.

Intrinsic point defects in off-stoichiometric Cu2ZnSnSe4: A neutron diffraction study

NASA Astrophysics Data System (ADS)

Gurieva, Galina; Valle Rios, Laura Elisa; Franz, Alexandra; Whitfield, Pamela; Schorr, Susan

2018-04-01

This work is an experimental study of intrinsic point defects in off-stoichiometric kesterite type CZTSe by means of neutron powder diffraction. We revealed the existence of copper vacancies (VCu), various cation anti site defects (CuZn, ZnCu, ZnSn, SnZn, and CuZn), as well as interstitials (Cui, Zni) in a wide range of off-stoichiometric polycrystalline powder samples synthesized by the solid state reaction. The results show that the point defects present in off-stoichiometric CZTSe agree with the off-stoichiometry type model, assuming certain cation substitutions accounting for charge balance. In addition to the known off-stoichiometry types A-H, new types (I-L) have been introduced. For the very first time, a correlation between the chemical composition of the CZTSe kesterite type phase and the occurring intrinsic point defects is presented. In addition to the off-stoichiometry type specific defects, the Cu/Zn disorder is always present in the CZTSe phase. In Cu-poor/Zn-rich CZTSe, a composition considered as the one that delivers the best photovoltaic performance, mainly copper vacancies, ZnCu and ZnSn anti sites are present. Also, this compositional region shows the lowest degree of Cu/Zn disorder.

Effects of CuZnAl Particles on Properties and Microstructure of Sn-58Bi Solder

PubMed Central

Yang, Fan; Zhang, Liang; Liu, Zhi-quan; Zhong, Su Juan; Ma, Jia; Bao, Li

2017-01-01

With the purpose of improving the properties of the Sn-58Bi lead-free solder, micro-CuZnAl particles ranging from 0 to 0.4 wt % were added into the low temperature eutectic Sn-58Bi lead-free solder. After the experimental testing of micro-CuZnAl particles on the properties and microstructure of the Sn-58Bi solders, it was found that the wettability of the Sn-58Bi solders was obviously improved with addition of CuZnAl particles. When the addition of CuZnAl particles was 0.2 wt %, the wettability of the Sn-58Bi solder performed best. At the same time, excessive addition of CuZnAl particles led to poor wettability. However, the results showed that CuZnAl particles changed the melting point of the Sn-58Bi solder slightly. The microstructure of the Sn-58Bi solder was refined by adding CuZnAl particles. When the content of CuZnAl addition was between 0.1 and 0.2 wt %, the refinement was great. In addition, the interfacial IMC layer between new composite solder and Cu substrate was thinner than that between the Sn-58Bi solder and Cu substrate. PMID:28772917

Superconducting transition temperature in the Y(1-x)M(x)Ba2Cu3O(y) system

NASA Astrophysics Data System (ADS)

Suzuki, Takeyuki; Yamazaki, Tsutomu; Sekine, Ryuuta; Koukitsu, Akinori; Seki, Hisashi

1989-04-01

Experimental results are presented for the inclusion of compositional additives, M, to the sintered high-temperature superconductor Y(1-x)M(x)Ba2Cu3O(y); M can be the oxides of Mg, Ce, Gd, Yb, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Zn, B, Al, Ga, In, Si, Ge, Sn, Pb, Sb, Bi, and Te, as well as Li, Na, K, Ca, Sr, and La carbonates. Temperature dependence of the electrical resistance was measured down to about 80 K. Attention is given to the influence of ionic radius and the valence of the M species.

NO2 Gas Sensing Properties of Multiple Networked ZnGa2O4 Nanorods Coated with TiO2.

PubMed

An, Soyeon; Park, Sunghoon; Ko, Hyunsung; Jin, Changhyun; Lee, Chongmu

2015-01-01

The NO2 gas sensing properties of ZnGa2O4-TiO2 heterostructure nanorods was examined. ZnGa2O4-core/TiO2-shell nanorods were fabricated by the thermal evaporation of a mixture of Zn and GaN powders and the sputter deposition of TiO2. Multiple networked ZnGa2O4-core/TiO2-shell nanorod sensors showed the response of 876% at 10 ppm NO2 at 300 degrees C. This response value at 10 ppm NO2 is approximately 4 times larger than that of bare ZnGa2O4 nanorod sensors. The response values obtained by the ZnGa2O4-core/TiO2-shell nanorods in this study are more than 13 times higher than those obtained previously by the SnO2-core/ZnO-shell nanofibers at 5% NO2. The significant enhancement in the response of ZnGa2O4 nanorods to NO2 gas by coating them with TiO2 can be explained based on the space-charge model.

Phytotoxic effects of Cu and Zn on soybeans grown in field-aged soils: their additive and interactive actions.

PubMed

Kim, Bojeong; McBride, Murray B

2009-01-01

A field pot experiment was conducted to investigate the interactive phytotoxicity of soil Cu and Zn on soybean plants [Glycine max (L.) Merr.]. Two soils (Arkport sandy loam [coarse-loamy, mixed, active, mesic Lamellic Hapludalf] and Hudson silty clay loam [fine, illitic, mesic Glossaquic Hapludalf]) spiked with Cu, Zn, and combinations of both to reach the final soil metal range of 0 to 400 mg kg(-1) were tested in a 2-yr bioassay after 1 yr of soil-metal equilibration in the field. The soluble and easily-extractable fraction of soil Zn (or Cu), estimated by dilute CaCl2, increased linearly in response to the total Zn (or Cu) added. This linearity was, however, strongly affected where soils were treated with both metals in combination, most notably for Zn, as approximately 50% more of soil Zn was extracted into solution when the Cu level was high. Consequently, added Zn is less likely to be stabilized by aging than added Cu when both metals are present in field soils. The predictive model relating soil metal extractability to plant Zn concentration also revealed a significant Cu-Zn interaction. By contrast, the interaction between the two metals contributed little to explain plant Cu uptake. The additive action of soil Cu and Zn was of considerable importance in explaining plant biomass reduction. This work clearly demonstrates the critical roles of the properties of the soil, the nature of the metal, and the level of other toxic metals present on the development of differential phytotoxicity due to soil Cu and Zn.

Fractionation of Cu and Zn isotopes during adsorption onto amorphous Fe(III) oxyhydroxide: Experimental mixing of acid rock drainage and ambient river water

USGS Publications Warehouse

Balistrieri, L.S.; Borrok, D.M.; Wanty, R.B.; Ridley, W.I.

2008-01-01

Fractionation of Cu and Zn isotopes during adsorption onto amorphous ferric oxyhydroxide is examined in experimental mixtures of metal-rich acid rock drainage and relatively pure river water and during batch adsorption experiments using synthetic ferrihydrite. A diverse set of Cu- and Zn-bearing solutions was examined, including natural waters, complex synthetic acid rock drainage, and simple NaNO3 electrolyte. Metal adsorption data are combined with isotopic measurements of dissolved Cu (65Cu/63Cu) and Zn (66Zn/64Zn) in each of the experiments. Fractionation of Cu and Zn isotopes occurs during adsorption of the metal onto amorphous ferric oxyhydroxide. The adsorption data are modeled successfully using the diffuse double layer model in PHREEQC. The isotopic data are best described by a closed system, equilibrium exchange model. The fractionation factors (??soln-solid) are 0.99927 ?? 0.00008 for Cu and 0.99948 ?? 0.00004 for Zn or, alternately, the separation factors (??soln-solid) are -0.73 ?? 0.08??? for Cu and -0.52 ?? 0.04??? for Zn. These factors indicate that the heavier isotope preferentially adsorbs onto the oxyhydroxide surface, which is consistent with shorter metal-oxygen bonds and lower coordination number for the metal at the surface relative to the aqueous ion. Fractionation of Cu isotopes also is greater than that for Zn isotopes. Limited isotopic data for adsorption of Cu, Fe(II), and Zn onto amorphous ferric oxyhydroxide suggest that isotopic fractionation is related to the intrinsic equilibrium constants that define aqueous metal interactions with oxyhydroxide surface sites. Greater isotopic fractionation occurs with stronger metal binding by the oxyhydroxide with Cu > Zn > Fe(II).

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

NASA Technical Reports Server (NTRS)

Huber, Daniel A.; Olsen, Larry C.; Dunham, Glen; Addis, F. William

1993-01-01

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Multi-mechanism efficiency enhancement in growing Ga-doped ZnO as the transparent conductor on a light-emitting diode.

PubMed

Yao, Yu-Feng; Lin, Chun-Han; Hsieh, Chieh; Su, Chia-Ying; Zhu, Erwin; Yang, Shaobo; Weng, Chi-Ming; Su, Ming-Yen; Tsai, Meng-Che; Wu, Shang-Syuan; Chen, Sheng-Hung; Tu, Charng-Gan; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, C C

2015-12-14

The combined effects of a few mechanisms for emission efficiency enhancement produced in the overgrowth of the transparent conductor layer of Ga-doped ZnO (GaZnO) on a surface Ag-nanoparticle (NP) coated light-emitting diode (LED), including surface plasmon (SP) coupling, current spreading, light extraction, and contact resistivity reduction, are demonstrated. With a relatively higher GaZnO growth temperature (350 °C), melted Ag NPs can be used as catalyst for forming GaZnO nanoneedles (NNs) through the vapor-liquid-solid growth mode such that light extraction efficiency can be increased. Meanwhile, residual Ag NPs are buried in a simultaneously grown GaZnO layer for inducing SP coupling. With a relatively lower GaZnO growth temperature (250 °C), all the Ag NPs are preserved for generating a stronger SP coupling effect. By using a thin annealed GaZnO interlayer on p-GaN before Ag NP fabrication, the contact resistivity at the GaZnO/p-GaN interface and hence the overall device resistance can be reduced. Although the use of this interlayer blue-shifts the localized surface plasmon resonance peak of the fabricated Ag NPs from the quantum well emission wavelength of the current study (535 nm) such that the SP coupling effect becomes weaker, it is useful for enhancing the SP coupling effect in an LED with a shorter emission wavelength.

Chemical fractionation of Cu and Zn in stormwater, roadway dust and stormwater pond sediments

USGS Publications Warehouse

Camponelli, Kimberly M.; Lev, Steven M.; Snodgrass, Joel W.; Landa, Edward R.; Casey, Ryan E.

2010-01-01

This study evaluated the chemical fractionation of Cu and Zn from source to deposition in a stormwater system. Cu and Zn concentrations and chemical fractionation were determined for roadway dust, roadway runoff and pond sediments. Stormwater Cu and Zn concentrations were used to generate cumulative frequency distributions to characterize potential exposure to pond-dwelling organisms. Dissolved stormwater Zn exceeded USEPA acute and chronic water quality criteria in approximately 20% of storm samples and 20% of the storm duration sampled. Dissolved Cu exceeded the previously published chronic criterion in 75% of storm samples and duration and exceeded the acute criterion in 45% of samples and duration. The majority of sediment Cu (92–98%) occurred in the most recalcitrant phase, suggesting low bioavailability; Zn was substantially more available (39–62% recalcitrant). Most sediment concentrations for Cu and Zn exceeded published threshold effect concentrations and Zn often exceeded probable effect concentrations in surface sediments.

Molecular cloning and characterization of Siamese crocodile (Crocodylus siamensis) copper, zinc superoxide dismutase (CSI-Cu,Zn-SOD) gene.

PubMed

Sujiwattanarat, Penporn; Pongsanarakul, Parinya; Temsiripong, Yosapong; Temsiripong, Theeranan; Thawornkuno, Charin; Uno, Yoshinobu; Unajak, Sasimanas; Matsuda, Yoichi; Choowongkomon, Kiattawee; Srikulnath, Kornsorn

2016-01-01

Superoxide dismutase (SOD, EC 1.15.1.1) is an antioxidant enzyme found in all living cells. It regulates oxidative stress by breaking down superoxide radicals to oxygen and hydrogen peroxide. A gene coding for Cu,Zn-SOD was cloned and characterized from Siamese crocodile (Crocodylus siamensis; CSI). The full-length expressed sequence tag (EST) of this Cu,Zn-SOD gene (designated as CSI-Cu,Zn-SOD) contained 462bp encoding a protein of 154 amino acids without signal peptides, indicated as intracellular CSI-Cu,Zn-SOD. This agreed with the results from the phylogenetic tree, which indicated that CSI-Cu,Zn-SOD belonged to the intracellular Cu,Zn-SOD. Chromosomal location determined that the CSI-Cu,Zn-SOD was localized to the proximal region of the Siamese crocodile chromosome 1p. Several highly conserved motifs, two conserved signature sequences (GFHVHEFGDNT and GNAGGRLACGVI), and conserved amino acid residues for binding copper and zinc (His(47), His(49), His(64), His(72), His(81), Asp(84), and His(120)) were also identified in CSI-Cu,Zn-SOD. Real-time PCR analysis showed that CSI-Cu,Zn-SOD mRNA was expressed in all the tissues examined (liver, pancreas, lung, kidney, heart, and whole blood), which suggests a constitutively expressed gene in these tissues. Expression of the gene in Escherichia coli cells followed by purification yielded a recombinant CSI-Cu,Zn-SOD, with Km and Vmax values of 6.075mM xanthine and 1.4×10(-3)mmolmin(-1)mg(-1), respectively. This Vmax value was 40 times lower than native Cu,Zn-SOD (56×10(-3)mmolmin(-1)mg(-1)), extracted from crocodile erythrocytes. This suggests that cofactors, protein folding properties, or post-translational modifications were lost during the protein purification process, leading to a reduction in the rate of enzyme activity in bacterial expression of CSI-Cu,Zn-SOD. Copyright © 2015 Elsevier Inc. All rights reserved.

A facile green antisolvent approach to Cu2+-doped ZnO nanocrystals with visible-light-responsive photoactivities.

PubMed

Lu, Yi-Hsuan; Lin, Wei-Hao; Yang, Chao-Yao; Chiu, Yi-Hsuan; Pu, Ying-Chih; Lee, Min-Han; Tseng, Yuan-Chieh; Hsu, Yung-Jung

2014-08-07

An environmentally benign antisolvent method has been developed to prepare Cu(2+)-doped ZnO nanocrystals with controllable dopant concentrations. A room temperature ionic liquid, known as a deep eutectic solvent (DES), was used as the solvent to dissolve ZnO powders. Upon the introduction of the ZnO-containing DES into a bad solvent which shows no solvation to ZnO, ZnO was precipitated and grown due to the dramatic decrease of solubility. By adding Cu(2+) ions to the bad solvent, the growth of ZnO from the antisolvent process was accompanied by Cu(2+) introduction, resulting in the formation of Cu(2+)-doped ZnO nanocrystals. The as-prepared Cu(2+)-doped ZnO showed an additional absorption band in the visible range (400-800 nm), which conduced to an improvement in the overall photon harvesting efficiency. Time-resolved photoluminescence spectra, together with the photovoltage information, suggested that the doped Cu(2+) may otherwise trap photoexcited electrons during the charge transfer process, inevitably depressing the photoconversion efficiency. The photoactivity of Cu(2+)-doped ZnO nanocrystals for photoelectrochemical water oxidation was effectively enhanced in the visible region, which achieved the highest at 2.0 at% of Cu(2+). A further increase in the Cu(2+) concentration however led to a decrease in the photocatalytic performance, which was ascribed to the significant carrier trapping caused by the increased states given by excessive Cu(2+). The photocurrent action spectra illustrated that the enhanced photoactivity of the Cu(2+)-doped ZnO nanocrystals was mainly due to the improved visible photon harvesting achieved by Cu(2+) doping. These results may facilitate the use of transition metal ion-doped ZnO in other photoconversion applications, such as ZnO based dye-sensitized solar cells and magnetism-assisted photocatalytic systems.

Impaired zinc and copper status in children with burn injuries: need to reassess nutritional requirements.

PubMed

Voruganti, V Saroja; Klein, Gordon L; Lu, Hong-Xing; Thomas, Suchmor; Freeland-Graves, Jeanne H; Herndon, David N

2005-09-01

Major burns are associated with impaired Zn and Cu status. These micronutrients are essential for bone matrix formation, linear growth, and wound healing. This study evaluated the status of Zn and Cu in burned children and assessed adequacy of supplementation. Six children, mean total body surface area (TBSA), 54+/-9% (S.D.), were recruited. Nutrient intakes, plasma, wound exudate, and 24h urine samples were collected and analyzed for Zn and Cu. Bone mineral content was assessed by dual energy X-ray absorptiometry. Dietary Zn and Cu were three times the dietary reference, and mean plasma concentrations of Zn and Cu were low at admission and discharge. Urinary Zn was elevated at admission, whereas Cu was elevated at both times. Wound Zn and Cu concentrations exceeded plasma concentrations, suggesting that inflammatory wound exudate was a primary route of loss. We demonstrate that burn injury in children results in low plasma levels of Zn and Cu that are inadequately compensated during hospitalization.

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Chen, Chi-Heng; Yang, Ya-Yu; Sheu, Jinn-Kong; Lai, Li-Wen

2011-06-06

We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.

Near room temperature and large-area synthesis of ZnO/Cu2O heterojunction for photocatalytic properties

NASA Astrophysics Data System (ADS)

Gao, Shiyong; Zhang, Jiejing; Li, Wenqiang; Jiao, Shujie; Nie, Yanguang; Fan, Huaiyun; Zeng, Zhi; Yu, Qingjiang; Wang, Jinzhong; Zhang, Xitian

2018-01-01

Large-area ZnO/Cu2O heterojunction have been successfully synthesized on Cu foil through a simple two-step solution method at near room temperature. The field emission scanning electron microscopy characterization indicates that the morphology of as-prepared Cu2O film grown on Cu foil is octahedral structure with diameter of ∼450 nm and ZnO is nanorod arrays structure with diameter of ∼150 nm. The current-voltage measurement of ZnO/Cu2O heterojunction shows a typical rectifying characteristics. Moreover, the photocatalytic test indicates that ZnO/Cu2O heterojunction exhibits high photocatalytic efficient for degradation of congo red dyes. The possible photocatalytic mechanism of ZnO/Cu2O heterojunction is also presented.

Effects of Zn2+ and Pb2+ dopants on the activity of Ga2O3-based photocatalysts for water splitting.

PubMed

Wang, Xiang; Shen, Shuai; Jin, Shaoqing; Yang, Jingxiu; Li, Mingrun; Wang, Xiuli; Han, Hongxian; Li, Can

2013-11-28

Zn-doped and Pb-doped β-Ga2O3-based photocatalysts were prepared by an impregnation method. The photocatalyst based on the Zn-doped β-Ga2O3 shows a greatly enhanced activity in water splitting while the Pb-doped β-Ga2O3 one shows a dramatic decrease in activity. The effects of Zn(2+) and Pb(2+) dopants on the activity of Ga2O3-based photocatalysts for water splitting were investigated by HRTEM, XPS and time-resolved IR spectroscopy. A ZnGa2O4-β-Ga2O3 heterojunction is formed in the surface region of the Zn-doped β-Ga2O3 and a slower decay of photogenerated electrons is observed. The ZnGa2O4-β-Ga2O3 heterojunction exhibits type-II band alignment and facilitates charge separation, thus leading to an enhanced photocatalytic activity for water splitting. Unlike Zn(2+) ions, Pb(2+) ions are coordinated by oxygen atoms to form polyhedra as dopants, resulting in distorted surface structure and fast decay of photogenerated electrons of β-Ga2O3. These results suggest that the Pb dopants act as charge recombination centers expediting the recombination of photogenerated electrons and holes, thus decreasing the photocatalytic activity.

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Shi, Zhifeng; Yan, Long; Li, Pengchong; Zhang, Baolin; Du, Guotong

2016-02-01

O-polar ZnO films were grown on N-polar p-GaN/sapphire substrates by photo-assisted metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based O-polar n-ZnO/N-polar p-GaN were proposed and fabricated. It is experimentally demonstrated that the interface polarization of O-polar n-ZnO/N-polar p-GaN heterojunction can shift the location of the depletion region from the interface deep into the ZnO side. When a forward bias is applied to the proposed diode, a strong and high-purity ultraviolet emission located at 385 nm can be observed. Compared with conventional Zn-polar n-ZnO/Ga-polar p-GaN heterostructure diode, the ultraviolet emission intensity of the proposed heterojunction diode is greatly enhanced due to the presence of polarization-induced inversion layer at the ZnO side of the heterojunction interface. This work provides an innovative path for the design and development of ZnO-based ultraviolet diode.

Study of Even-Even/Odd-Even/Odd-Odd Nuclei in Zn-Ga-Ge Region in the Proton-Neutron IBM/IBFM/IBFFM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoshida, N.; Brant, S.; Zuffi, L.

We study the even-even, odd-even and odd-odd nuclei in the region including Zn-Ga-Ge in the proton-neutron IBM and the models derived from it: IBM2, IBFM2, IBFFM2. We describe {sup 67}Ga, {sup 65}Zn, and {sup 68}Ga by coupling odd particles to a boson core {sup 66}Zn. We also calculate the beta{sup +}-decay rates among {sup 68}Ge, {sup 68}Ga and {sup 68}Zn.

Zinc diffusion in gallium arsenide and the properties of gallium interstitials

NASA Astrophysics Data System (ADS)

Bracht, H.; Brotzmann, S.

2005-03-01

We have performed zinc diffusion experiments in gallium arsenide at temperatures between 620°C and 870°C with a dilute Ga-Zn source. The low Zn partial pressure established during annealing realizes Zn surface concentrations of ⩽2×1019cm-3 , which lead to the formation of characteristic S-shaped diffusion profiles. Accurate modeling of the Zn profiles, which were measured by means of secondary ion mass spectroscopy, shows that Zn diffusion under the particular doping conditions is mainly mediated by neutral and singly positively charged Ga interstitials via the kick-out mechanism. We determined the temperature dependence of the individual contributions of neutral and positively charged Ga interstitials to Ga diffusion for electronically intrinsic conditions. The data are lower than the total Ga self-diffusion coefficient and hence consistent with the general interpretation that Ga diffusion under intrinsic conditions is mainly mediated by Ga vacancies. Our results disprove the general accepted interpretation of Zn diffusion in GaAs via doubly and triply positively charged Ga interstitials and solves the inconsistency related to the electrical compensation of the acceptor dopant Zn by the multiply charged Ga interstitials.

Copper(II) and zinc(II) dinuclear enzymes model compounds: The nature of the metal ion in the biological function

NASA Astrophysics Data System (ADS)

Ferraresso, L. G.; de Arruda, E. G. R.; de Moraes, T. P. L.; Fazzi, R. B.; Da Costa Ferreira, A. M.; Abbehausen, C.

2017-12-01

First series transition metals are used abundantly by nature to perform catalytic transformations of several substrates. Furthermore, the cooperative activity of two proximal metal ions is common and represents a highly efficient catalytic system in living organisms. In this work three dinuclear μ-phenolate bridged metal complexes were prepared with copper(II) and zinc(II), resulting in a ZnZn, CuCu and CuZn with the ligand 2-ethylaminodimethylamino phenol (saldman) as model compounds of superoxide dismutase (CuCu and CuZn) and metallo-β-lactamases (ZnZn). Metals are coordinated in a μ-phenolate bridged symmetric system. Cu(II) presents a more distorted structure, while zinc is very symmetric. For this reason, [CuCu(saldman)] shows higher water solubility and also higher lability of the bridge. The antioxidant and hydrolytic beta-lactamase-like activity of the complexes were evaluated. The lability of the bridge seems to be important for the antioxidant activity and is suggested to because of [CuCu(saldman)] presents a lower antioxidant capacity than [CuZn(saldman)], which showed to present a more stable bridge in solution. The hydrolytic activity of the bimetallic complexes was assayed using nitrocefin as substrate and showed [ZnZn(saldman)] as a better catalyst than the Cu(II) analog. The series demonstrates the importance of the nature of the metal center for the biological function and how the reactivity of the model complex can be modulated by coordination chemistry.

Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu

NASA Astrophysics Data System (ADS)

Shin, Hyun Wook; Son, Jong Yeog

2018-05-01

Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0-20% molar concentrations are obtained by adjusting the deposition rates of ZnO and Cu. The CZO thin films exhibit room temperature ferromagnetism, and CZO with 5% Cu molar concentration has maximum remanent magnetization, which is consistent with theoretical results.

Low temperature Zn diffusion for GaSb solar cell structures fabrication

NASA Technical Reports Server (NTRS)

Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

1995-01-01

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Effect of silicon on activity coefficients of siderophile elements (Au, Pd, Pt, P, Ga, Cu, Zn, and Pb) in liquid Fe: Roles of core formation, late sulfide matte, and late veneer in shaping terrestrial mantle geochemistry

NASA Astrophysics Data System (ADS)

Righter, K.; Pando, K.; Humayun, M.; Waeselmann, N.; Yang, S.; Boujibar, A.; Danielson, L. R.

2018-07-01

Earth's core contains ∼10% of a light element that may be a combination of Si, S, C, O or H, with Si potentially being the major light element. Metal-silicate partitioning of siderophile elements can place important constraints on the P-T-fO2 and composition of the early Earth, but the effect of Si alloyed in Fe liquids is unknown for many of these elements. In particular, the effect of Si on the partitioning of highly siderophile elements (Au, Re and PGE) is virtually unknown. To address this gap in understanding, we have undertaken a systematic study of the highly siderophile elements Au, Pd, and Pt, and the volatile siderophile elements P, Ga, Cu, Zn, and Pb at variable Si content of metal, and 1600 °C and 1 GPa. From our experiments we derive epsilon interaction parameters between these elements and Si in Fe metallic liquids. The new parameters are used to update an activity model for trace siderophile elements in Fe alloys; Si causes large variation in the magnitude of activity coefficients of these elements in FeSi liquids. Because the interaction parameters are all positive, Si causes a decrease in their metal/silicate partition coefficients. We combine these new activity results with experimental studies of Au, Pd, Pt, P, Ga, Cu, Zn and Pb, to derive predictive expressions for metal/silicate partition coefficients which can then be applied to Earth. The expressions are applied to two scenarios for continuous accretion of Earth; specifically for constant and increasing fO2 during accretion. The results indicate that mantle concentrations of P, Ga, Cu, Zn, and Pb can be explained by metal-silicate equilibrium during accretion of the Earth where Earth's early magma ocean deepens to pressures of 40-60 GPa. Au, Pd, and Pt, on the other hand become too high in the mantle in such a scenario, and require a later removal mechanism, rather than an addition as traditionally argued. A late reduction event that removes 0.5% metal from a shallow magma ocean can lower the Au, Pd, and Pt contents to values near the current day BSE. On the other hand, removal of 0.2-1.0% of a late sulfide-rich matte to the core would lower the Au, Pd, and Pt concentrations in the mantle, but not to chondritic relative concentrations observed in the BSE. If sulfide matte is called upon to remove HSEs, they must be later added via a late veneer to re-establish the high and chondritic relative PUM concentrations. These results suggest that although accretion and core formation (involving a Si, S, and C-bearing metallic liquid) were the primary processes establishing many of Earth's mantle volatile elements and HSE, a secondary removal process is required to establish HSEs at their current and near-chondritic relative BSE levels. Mn and P - two siderophile elements that are central to biochemical processes (photosynthesis and triphosphates, respectively) - have significant and opposite interactions with FeSi liquids, and their mantle concentrations would be notably different if Earth had a Si-free core.

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only controlmore » samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and η = 13.0%.« less

Copper-zinc-superoxide dismutase (CuZnSOD), an antioxidant gene from seahorse (Hippocampus abdominalis); molecular cloning, sequence characterization, antioxidant activity and potential peroxidation function of its recombinant protein.

PubMed

Perera, N C N; Godahewa, G I; Lee, Jehee

2016-10-01

Copper-zinc-superoxide dismutase (CuZnSOD) from Hippocampus abdominalis (HaCuZnSOD) is a metalloenzyme which belongs to the ubiquitous family of SODs. Here, we determined the characteristic structural features of HaCuZnSOD, analyzed its evolutionary relationships, and identified its potential immune responses and biological functions in relation to antioxidant defense mechanisms in the seahorse. The gene had a 5' untranslated region (UTR) of 67 bp, a coding sequence of 465 bp and a 3' UTR of 313 bp. The putative peptide consists of 154 amino acids. HaCuZnSOD had a predicted molecular mass of 15.94 kDa and a theoretical pI value of 5.73, which is favorable for copper binding activity. In silico analysis revealed that HaCuZnSOD had a prominent Cu-Zn_superoxide_dismutase domain, two Cu/Zn signature sequences, a putative N-glycosylation site, and several active sites including Cu(2+) and Zn(2+) binding sites. The three dimensional structure indicated a β-sheet barrel with 8 β-sheets and two short α-helical regions. Multiple alignment analyses revealed many conserved regions and active sites among its orthologs. The highest amino acid identity to HaCuZnSOD was found in Siniperca chuatsi (87.4%), while Maylandia zebra shared a close relationship in the phylogenetic analysis. Functional assays were performed to assess the antioxidant, biophysical and biochemical properties of overexpressed recombinant (r) HaCuZnSOD. A xanthine/XOD assay gave optimum results at pH 9 and 25 °C indicating these may be the best conditions for its antioxidant action in the seahorse. An MTT assay and flow cytometry confirmed that rHaCuZnSOD showed peroxidase activity in the presence of HCO3(-). In all the functional assays, the level of antioxidant activity of rHaCuZnSOD was concentration dependent; metal ion supplementation also increased its activity. The highest mRNA expressional level of HaCuZnSOD was found in blood. Temporal assessment under pathological stress showed a delay response by HaCuZnSOD. Our findings demonstrated that HaCuZnSOD is an important antioxidant, which might be involved in the host antioxidant defense mechanism against oxidative stress. Copyright © 2016 Elsevier Ltd. All rights reserved.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karayigit, A.I.; Bulut, Y.; Karayigit, G.

A total of 48 samples, feed coals (FCs), fly ashes (FAs) and bottom ashes (BAs), which were systematically collected once a week over an eight-week period from boiler units, B1-4 with 660 MW and B5-6 with 330 MW capacity from Soma power plant, have been evaluated for major and trace elements (Al, Ca, Fe, K, Mg, Mn, Na, Ti, S, As, B, Ba, Be, Bi, Cd, Co, Cr, Cu, Cs, Ga, Ge, Hf, Hg, Li, Mo, Nb, Ni, P, Pb, Rb, Sb, Sc, Se, Sn, Sr, Ta, Th, Tl, U, V, Y, Zn, Zr, and REEs) to get information onmore » behavior during coal combustion. This study indicates that some elements such as Hg, Bi, Cd, As, Pb, Ge, Tl, Sn, Zn, Sb, B show enrichments in FAs relative to the BAs in both group boiler units. In addition to these, Cs, Lu, Tm, and Ga in Units B1-4 and S in Units B5-6 also have enrichments in FAs. Elements showing enrichments in BAs in both group boiler units are Ta, Mn, Nb. In addition to these, Se, Ca, Mg, Na, Fe in Units B1-4 and Cu in Units B5-6 also have enrichments in BAs. The remaining elements investigated in this study have no clear segregation between FAs and BAs. Mass balance calculations with the two methods show that some elements, S, Ta, Hg, Se, Zn, Na, Ca in Units B1-4, and Hg, S, Ta, Se, P in Units B5-6, have volatile behavior during coal combustion in the Soma power plant. This study also implies that some elements, Sb and Tb in Units B1-4 and Sb in Units B5-6, have relatively high retention effects in the combustion residues from the Soma power plant.« less

Controlled electrodeposition of Cu-Ga from a deep eutectic solvent for low cost fabrication of CuGaSe2 thin film solar cells.

PubMed

Steichen, Marc; Thomassey, Matthieu; Siebentritt, Susanne; Dale, Phillip J

2011-03-14

The electrochemical deposition of Ga and Cu-Ga alloys from the deep eutectic solvent choline chloride/urea (Reline) is investigated to prepare CuGaSe(2) (CGS) semiconductors for their use in thin film solar cells. Ga electrodeposition is difficult from aqueous solution due to its low standard potential and the interfering hydrogen evolution reaction (HER). Ionic liquid electrolytes offer a better thermal stability and larger potential window and thus eliminate the interference of solvent breakdown reactions during Ga deposition. We demonstrate that metallic Ga can be electrodeposited from Reline without HER interference with high plating efficiency on Mo and Cu electrodes. A new low cost synthetic route for the preparation of CuGaSe(2) absorber thin films is presented and involves the one-step electrodeposition of Cu-Ga precursors from Reline followed by thermal annealing. Rotating disk electrode (RDE) cyclic voltammetry (CV) is used in combination with viscosity measurements to determine the diffusion coefficients of gallium and copper ions in Reline. The composition of the codeposited Cu-Ga precursor layers can be controlled to form Cu/Ga thin films with precise stoichiometry, which is important for achieving good optoelectronic properties of the final CuGaSe(2) absorbers. The morphology, the chemical composition and the crystal structure of the deposited thin films are analysed by scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) and X-ray diffraction (XRD). Annealing of the Cu-Ga films in a selenium atmosphere allowed the formation of high quality CuGaSe(2) absorber layers. Completed CGS solar cells achieved a 4.1% total area power conversion efficiency.

Adsorption of multi-heavy metals Zn and Cu onto surficial sediments: modeling and adsorption capacity analysis.

PubMed

Li, Shanshan; Zhang, Chen; Wang, Meng; Li, Yu

2014-01-01

Improved multiple regression adsorption models (IMRAMs) was developed to estimate the adsorption capacity of the components [Fe oxides (Fe), Mn oxides (Mn), organic materials (OMs), residuals] in surficial sediments for multi-heavy metal Zn and Cu. IMRAM is an improved version over MRAM, which introduces a computer program in the model developing process. As MRAM, Zn(Cu) IMRAM, and Cu(Zn) IMRAM again confirmed that there is significant interaction effects that control the adsorption of compounded Zn and Cu, which was neglected by additional adsorption model. The verification experiment shows that the relative deviation of the IMRAMs is less than 13%. It is revealed by the IMRAMs that Mn, which has the greatest adsorption capability for compounded Zn and Cu (54.889 and 161.180 mg/l, respectively), follows by interference adsorption capacity of Fe/Mn (-1.072 and -24.591 mg/l respectively). Zn and Cu influence each other through different mechanisms. When Zn is the adsorbate, compounded Cu mainly affects the adsorption capacities of Fe/Mn and Fe/Mn/OMs; while when Cu is the adsorbate, compounded Zn mainly exerts its effect on Mn, Fe/Mn, and Mn/OMs. It also shows that the compounded Zn or Cu weakened the interference adsorption of Fe/Mn, and meanwhile, strengthened the interference adsorption of Mn/OMs.

Investigation of the 66Zn(p,2pn) 64Cu and 68Zn(p,x) 64Cu nuclear processes up to 100 MeV: Production of 64Cu

NASA Astrophysics Data System (ADS)

Szelecsényi, F.; Steyn, G. F.; Kovács, Z.; Vermeulen, C.; van der Meulen, N. P.; Dolley, S. G.; van der Walt, T. N.; Suzuki, K.; Mukai, K.

2005-11-01

Cross-sections of the 66Zn(p,2pn)64Cu and 68Zn(p,x)64Cu nuclear processes were measured on highly enriched zinc targets using the stacked-foil activation technique up to 100 MeV. The new cross-sections were compared to literature data. The optimum energy range for production of 64Cu was found to be 70 → 35 MeV on 66Zn and 37 → 20 MeV on 68Zn. The thick-target yields were determined as 777 MBq/μAh (21.0 mCi/μAh) and 185 MBq/μAh (5.0 mCi/μAh), respectively. The yields of the longer-lived contaminant copper radioisotopes (i.e. 61Cu when using 66Zn as target material and both 61Cu and 67Cu in the case of 68Zn target material) were also calculated. The results obtained from the present study indicate that both reactions are suited for the production of 64Cu at a medium energy cyclotron. The optimum energy ranges are also complementary therefore the potential to utilize tandem targetry exists.

Facile synthesis of core-shell Cu2O@ ZnO structure with enhanced photocatalytic H2 production

NASA Astrophysics Data System (ADS)

Zhang, Yong-Hui; Jiu, Bei-Bei; Gong, Fei-Long; Lu, Kuan; Jiang, Nan; Zhang, Hao-Li; Chen, Jun-Li

2018-05-01

Core-shell Cu2O@ZnO composites were synthesized successfully based on a one-pot hydrothermal method in the presence of dioctyl sulfosuccinate sodium salt (AOT) surfactant. The Cu2O can be converted to rough core-shell Cu2O@ZnO structure by adjusting the amount of zinc powder added. The as-synthesized Cu2O@ZnO composites exhibited excellent photocatalytic activity and the amount of H2 generated using these composites was 4.5-fold more than that produced with Cu2O cubes. A possible photocatalytic mechanism for the Cu2O@ZnO composites with enhanced photocatalytic activity could be the separation by ZnO of the effective charge carriers.

Simultaneous adsorption and degradation of Zn(2+) and Cu (2+) from wastewaters using nanoscale zero-valent iron impregnated with clays.

PubMed

Shi, Li-Na; Zhou, Yan; Chen, Zuliang; Megharaj, Mallavarapu; Naidu, Ravi

2013-06-01

Clays such as kaolin, bentonite and zeolite were evaluated as support material for nanoscale zero-valent iron (nZVI) to simultaneously remove Cu(2+) and Zn(2+) from aqueous solution. Of the three supported nZVIs, bentonite-supported nZVI (B-nZVI) was most effective in the simultaneous removal of Cu(2+) and Zn(2+) from a aqueous solution containing a 100 mg/l of Cu(2+) and Zn(2+), where 92.9 % Cu(2+) and 58.3 % Zn(2+) were removed. Scanning electronic microscope (SEM) revealed that the aggregation of nZVI decreased as the proportion of bentonite increased due to the good dispersion of nZVI, while energy dispersive spectroscopy (EDS) demonstrated the deposition of copper and zinc on B-nZVI after B-nZVI reacted with Cu(2+) and Zn(2+). A kinetics study indicated that removing Cu(2+) and Zn(2+) with B-nZVI accorded with the pseudo first-order model. These suggest that simultaneous adsorption of Cu(2+)and Zn(2+) on bentonite and the degradation of Cu(2+)and Zn(2+) by nZVI on the bentonite. However, Cu(2+) removal by B-nZVI was reduced rather than adsorption, while Zn(2+) removal was main adsorption. Finally, Cu(2+), Zn(2+), Ni(2+), Pb(2+) and total Cr from various wastewaters were removed by B-nZVI, and reusability of B-nZVI with different treatment was tested, which demonstrates that B-nZVI is a potential material for the removal of heavy metals from wastewaters.

The Attenuation of Central Angiotensin II-dependent Pressor Response and Intra-neuronal Signaling by Intracarotid Injection of Nanoformulated Copper/Zinc Superoxide Dismutase

PubMed Central

Rosenbaugh, Erin G.; Roat, James; Gao, Lie; Yang, Rui-Fang; Manickam, Devika S.; Yin, Jing-Xiang; Schultz, Harold D.; Bronich, Tatiana K.; Batrakova, Elena V.; Kabanov, Alexander V.; Zucker, Irving H.; Zimmerman, Matthew C.

2010-01-01

Adenoviral-mediated overexpression of the intracellular superoxide (O2•−) scavenging enzyme copper/zinc superoxide dismutase (CuZnSOD) in the brain attenuates central angiotensin II (AngII)-induced cardiovascular responses. However, the therapeutic potential for adenoviral vectors is weakened by toxicity and the inability of adenoviral vectors to target the brain following peripheral administration. Therefore, we developed a non-viral delivery system in which CuZnSOD protein is electrostatically bound to a synthetic poly(ethyleneimine)-poly(ethyleneglycol) (PEI-PEG) polymer to form a polyion complex (CuZnSOD nanozyme). We hypothesized that PEI-PEG polymer increases transport of functional CuZnSOD to neurons, which inhibits AngII intra-neuronal signaling. The AngII-induced increase in O2•−, as measured by dihydroethidium fluorescence and electron paramagnetic resonance spectroscopy, was significantly inhibited in CuZnSOD nanozyme-treated neurons compared to free CuZnSOD- and non-treated neurons. CuZnSOD nanozyme also attenuated the AngII-induced inhibition of K+ current in neurons. Intracarotid injection of CuZnSOD nanozyme into rabbits significantly inhibited the pressor response of intracerebroventricular-delivered AngII; however, intracarotid injection of free CuZnSOD or PEI-PEG polymer alone failed to inhibit this response. Importantly, neither the PEI-PEG polymer alone nor the CuZnSOD nanozyme induced neuronal toxicity. These findings indicate that CuZnSOD nanozyme inhibits AngII intra-neuronal signaling in vitro and in vivo. PMID:20378166

Copper to Zinc Ratio as Disease Biomarker in Neonates with Early-Onset Congenital Infections

PubMed Central

Wisniewska, Monika; Cremer, Malte; Wiehe, Lennart; Becker, Niels-Peter; Rijntjes, Eddy; Martitz, Janine; Renko, Kostja; Bührer, Christoph; Schomburg, Lutz

2017-01-01

Copper (Cu) and zinc (Zn) are essential trace elements for regular development. Acute infections alter their metabolism, while deficiencies increase infection risks. A prospective observational case-control study was conducted with infected (n = 21) and control (n = 23) term and preterm newborns. We analyzed trace element concentrations by X-ray fluorescence, and ceruloplasmin (CP) by Western blot. Median concentration of Cu at birth (day 1) was 522.8 [387.1–679.7] μg/L, and Zn was 1642.4 ± 438.1 μg/L. Cu and Zn correlated positively with gestational age in control newborns. Cu increased in infected newborns from day 1 to day 3. CP correlated positively to Cu levels at birth in both groups and on day 3 in the group of infected neonates. The Cu/Zn ratio was relatively high in infected newborns. Interleukin (IL)-6 concentrations on day 1 were unrelated to Cu, Zn, or the Cu/Zn ratio, whereas C-reactive protein (CRP) levels on day 3 correlated positively to the Cu/Zn -ratio at both day 1 and day 3. We conclude that infections affect the trace element homeostasis in newborns: serum Zn is reduced, while Cu and CP are increased. The Cu/Zn ratio combines both alterations, independent of gestational age. It may, thus, constitute a meaningful diagnostic biomarker for early-onset infections. PMID:28358335

Structural and optical characterization of ZnO/Mg(x)Zn(1-x)O multiple quantum wells based random laser diodes.

PubMed

Jiang, Qike; Zheng, He; Wang, Jianbo; Long, Hao; Fang, Guojia

2012-12-01

Two kinds of laser diodes (LDs) comprised of ZnO/Mg(x)Zn(1-x)O (ZnO/MZO) multiple quantum wells (MQWs) grown on GaN (MQWs/GaN) and Si (MQWs/Si) substrates, respectively, have been constructed. The LD with MQWs/GaN exhibits ultraviolet random lasing under electrical excitation, while that with MQWs/Si does not. In the MQWs/Si, ZnO/MZO MQWs consist of nanoscaled crystallites, and the MZO layers undergo a phase separation of cubic MgO and hexagonal ZnO. Moreover, the Mg atom predominantly locates in the MZO layers along with a significant aggregation at the ZnO/MZO interfaces; in sharp contrast, the ZnO/MZO MQWs in the MQWs/GaN show a well-crystallized structure with epitaxial relationships among GaN, MZO, and ZnO. Notably, Mg is observed to diffuse into the ZnO well layers. The structure-optical property relationship of these two LDs is further discussed.

Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.

PubMed

Fang, Xuan; Wei, Zhipeng; Yang, Yahui; Chen, Rui; Li, Yongfeng; Tang, Jilong; Fang, Dan; Jia, Huimin; Wang, Dengkui; Fan, Jie; Ma, Xiaohui; Yao, Bin; Wang, Xiaohua

2016-01-27

We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.

Simultaneous increase in strength and ductility by decreasing interface energy between Zn and Al phases in cast Al-Zn-Cu alloy.

PubMed

Han, Seung Zeon; Choi, Eun-Ae; Park, Hyun Woong; Lim, Sung Hwan; Lee, Jehyun; Ahn, Jee Hyuk; Hwang, Nong-Moon; Kim, Kwangho

2017-09-22

Cast-Al alloys that include a high amount of the second element in their matrix have comparatively high strength but low ductility because of the high volume fraction of strengthening phases or undesirable inclusions. Al-Zn alloys that have more than 30 wt% Zn have a tensile strength below 300 MPa, with elongation under 5% in the as-cast state. However, we found that after substitution of 2% Zn by Cu, the tensile strength of as-cast Al-Zn-Cu alloys was 25% higher and ductility was four times higher than for the corresponding Al-35% Zn alloy. Additionally, for the Al-43% Zn alloy with 2% Cu after 1 h solution treatment at 400 °C and water quenching, the tensile strength unexpectedly reached values close to 600 MPa. For the Al-33% Zn alloy with 2% Cu, the tensile strength was 500 MPa with 8% ductility. The unusual trends of the mechanical properties of Al-Zn alloys with Cu addition observed during processing from casting to the subsequent solution treatment were attributed to the precipitation of Zn in the Al matrix. The interface energy between the Zn particles and the Al matrix decreased when using a solution of Cu in Zn.

Overall water splitting on (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution photocatalyst: relationship between physical properties and photocatalytic activity.

PubMed

Maeda, Kazuhiko; Teramura, Kentaro; Takata, Tsuyoshi; Hara, Michikazu; Saito, Nobuo; Toda, Kenji; Inoue, Yasunobu; Kobayashi, Hisayoshi; Domen, Kazunari

2005-11-03

The physical and photocatalytic properties of a novel solid solution between GaN and ZnO, (Ga(1-x)Zn(x))(N(1-x)O(x)), are investigated. Nitridation of a mixture of Ga(2)O(3) and ZnO at 1123 K for 5-30 h under NH(3) flow results in the formation of a (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution with x = 0.05-0.22. With increasing nitridation time, the zinc and oxygen concentrations decrease due to reduction of ZnO and volatilization of zinc, and the crystallinity and band gap energy of the product increase. The highest activity for overall water splitting is obtained for (Ga(1-x)Zn(x))(N(1-x)O(x)) with x = 0.12 after nitridation for 15 h. The crystallinity of the catalyst is also found to increase with increasing the ratio of ZnO to Ga(2)O(3) in the starting material, resulting in an increase in activity.

Colloidal synthesis of Cu-ZnO and Cu@CuNi-ZnO hybrid nanocrystals with controlled morphologies and multifunctional properties.

PubMed

Zeng, Deqian; Gong, Pingyun; Chen, Yuanzhi; Zhang, Qinfu; Xie, Qingshui; Peng, Dong-Liang

2016-06-02

Metal-semiconductor hybrid nanocrystals have received extensive attention owing to their multiple functionalities which can find wide technological applications. The utilization of low-cost non-noble metals to construct novel metal-semiconductor hybrid nanocrystals is important and meaningful for their large-scale applications. In this study, a facile solution approach is developed for the synthesis of Cu-ZnO hybrid nanocrystals with well-controlled morphologies, including nanomultipods, core-shell nanoparticles, nanopyramids and core-shell nanowires. In the synthetic strategy, Cu nanocrystals formed in situ serve as seeds for the heterogeneous nucleation and growth of ZnO, and it eventually forms various Cu-ZnO hetero-nanostructures under different reaction conditions. These hybrid nanocrystals possess well-defined and stable heterostructure junctions. The ultraviolet-visible-near infrared spectra reveal morphology-dependent surface plasmon resonance absorption of Cu and the band gap absorption of ZnO. Furthermore, we construct a novel Cu@CuNi-ZnO ternary hetero-nanostructure by incorporating the magnetic metal Ni into the pre-synthesized colloidal Cu nanocrystals. Such hybrid nanocrystals possess a magnetic Cu-Ni intermediate layer between the ZnO shell and the Cu core, and exhibit ferromagnetic/superparamagnetic properties which expand their functionalities. Finally, enhanced photocatalytic activities are observed in the as-prepared non-noble metal-ZnO hybrid nanocrystals. This study not only provides an economical way to prepare high-quality morphology-controlled Cu-ZnO hybrid nanocrystals for potential applications in the fields of photocatalysis and photovoltaic devices, but also opens up new opportunities in designing ternary non-noble metal-semiconductor hybrid nanocrystals with multifunctionalities.

Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Ko, Rong-Ming; Wang, Shui-Jinn; Chen, Ching-Yi; Wu, Cheng-Han; Lin, Yan-Ru; Lo, Hsin-Ming

2017-04-01

The hydrothermal growth (HTG) of crystalline n-ZnO films on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO film on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ϕ-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO film crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes.

PubMed

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Li, Yuzhi; Yao, Rihui; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-03-27

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al 2 O 3 ) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al 2 O 3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al 2 O 3 PVL exhibited remarkable mobility of 33.5-220.1 cm 2 /Vs when channel length varies from 60 to 560 μ m. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously.

Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes

PubMed Central

Lu, Kuankuan; Li, Yuzhi; Xu, Miao; Wang, Lei; Peng, Junbiao; Lu, Xubing

2018-01-01

In this work, we fabricated a high-mobility amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) based on alumina oxide (Al2O3) passivation layer (PVL) and copper (Cu) source/drain electrodes (S/D). The mechanism of the high mobility for a-IGZO TFT was proposed and experimentally demonstrated. The conductivity of the channel layer was significantly improved due to the formation of metallic In nanoparticles on the back channel during Al2O3 PVL sputtering. In addition, Ar atmosphere annealing induced the Schottky contact formation between the Cu S/D and the channel layer caused by Cu diffusion. In conjunction with high conductivity channel and Schottky contact, the a-IGZO TFT based on Cu S/D and Al2O3 PVL exhibited remarkable mobility of 33.5–220.1 cm2/Vs when channel length varies from 60 to 560 μm. This work presents a feasible way to implement high mobility and Cu electrodes in a-IGZO TFT, simultaneously. PMID:29584710

Tunable photoluminescent metal-organic-frameworks and method of making the same

DOEpatents

Nenoff, Tina M.; Sava Gallis, Dorina Florentina; Rohwer, Lauren E.S.

2017-08-22

The present disclosure is directed to new photoluminescent metal-organic frameworks (MOFs). The newly developed MOFs include either non rare earth element (REE) transition metal atoms or limited concentrations of REE atoms, including: Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Ru, Ag, Cd, Sn, Sb, Ir, Pb, Bi, that are located in the MOF framework in site isolated locations, and have emission colors ranging from white to red, depending on the metal concentration levels and/or choice of ligand.

Micro-PIXE analysis of silicate reference standards

USGS Publications Warehouse

Czamanske, G.K.; Sisson, T.W.; Campbell, J.L.; Teesdale, W.J.

1993-01-01

The accuracy and precision of the University of Guelph proton microprobe have been evaluated through trace-element analysis of well-characterized silicate glasses and minerals, including BHVO-1 glass, Kakanui augite and hornblende, and ten other natural samples of volcanic glass, amphibole, pyroxene, and garnet. Using the 2.39 wt% Mo in a NIST steel as the standard, excellent precision and agreement between reported and analyzed abundances were obtained for Fe, Ni, Cu, Zn, Ga, Rb, Sr, Y, Zr, and Nb. -from Authors

Coercivity enhancement of Nd-Fe-B hot-deformed magnets by the eutectic grain boundary diffusion process using Nd-Ga-Cu and Nd-Fe-Ga-Cu alloys

NASA Astrophysics Data System (ADS)

Liu, Lihua; Sepehri-Amin, H.; Sasaki, T. T.; Ohkubo, T.; Yano, M.; Sakuma, N.; Kato, A.; Shoji, T.; Hono, K.

2018-05-01

Nd80Ga15Cu5 and Nd62Fe14Ga20Cu4 alloys were used as diffusion sources for the eutectic grain boundary diffusion process, applying to 4 mm-thick Nd-Fe-B hot-deformed magnets. Both samples showed nearly same coercivity of 2.2 T, while the sample processed with Nd62Fe14Ga20Cu4 showed smaller remanence deterioration from 1.50 T to 1.30 T, in contrast to that of the sample processed with Nd80Ga15Cu5 to 1.08 T. Mr/Ms of the initial sample and the samples processed with Nd62Fe14Ga20Cu4 and Nd80Ga15Cu5 were 0.946, 0.934 and 0.917, respectively, suggesting that the sample processed with Nd62Fe14Ga20Cu4 retains stronger c-axis texture after the diffusion process. Nd-rich phases with Ia3 ¯ and fcc structures were observed in the sample processed with Nd80Ga15Cu5, while the Nd-rich phases with the Ia3 ¯ and hcp structures were found in the sample processed with Nd62Fe14Ga20Cu4, all of which are the phases commonly observed in Nd-Fe-B sintered magnets.

Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers

NASA Astrophysics Data System (ADS)

Mehrabian, M.; Esteki, Z.; Shokrvash, H.; Kavei, G.

2016-10-01

Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV-visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2+ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu2+ ion concentration was increased, which indicates that the acceptor level (of Cu2+) is getting close to the valence band of ZnS.

Structural and optoelectronic properties of ZnGaO thin film by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Han, Xiaowei; Wang, Li; Li, Shufeng; Gao, Dongwen; Pan, Yong

2018-01-01

ZnO has attracted much attention because of its high-energy gap and exciton binding energy at room temperature. Compared to ZnO thin films, ZnGaO thin films are more resistive to oxidation and have smaller deformation of lattice. In this study, the high purity ZnSe and Ga2O3 powders were weighted at a molar ratio of 18:1. Se was oxidized to Se2O3 and separated from the mixture powders by using conventional solid state reaction method in air, and the ZnGaO ceramic target was prepared. We fabricated the ZnGaO films on silica glass by pulsed laser deposition (PLD) method under different oxygen pressure at room temperature. The as-grown films were tested by X-ray diffraction and atomic force microscope (AFM) to diagnose the crystal structure and surface morphology. Moreover, we obtained the optical transmittance of ZnGaO film and found that the electrical conductivity capacity varied with the increase of oxygen pressure.

A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory

DOE PAGES

Baranowski, Lauryn L.; Zawadzki, Pawel; Lany, Stephan; ...

2016-11-10

Defects are critical to understanding the electronic properties of semiconducting compounds, for applications such as light-emitting diodes, transistors, photovoltaics, and thermoelectrics. In this review, we describe our work investigating defects in tetrahedrally bonded, multinary semiconductors, and discuss the place of our research within the context of publications by other groups. We applied experimental and theory techniques to understand point defects, structural disorder, and extended antisite defects in one semiconductor of interest for photovoltaic applications, Cu 2SnS 3. We contrast our findings on Cu 2SnS 3 with other chemically related Cu-Sn-S compounds, as well as structurally related compounds such as Cumore » 2ZnSnS 4 and Cu(In,Ga)Se 2. We find that evaluation of point defects alone is not sufficient to understand defect behavior in multinary tetrahedrally bonded semiconductors. In the case of Cu 2SnS 3 and Cu 2ZnSnS 4, structural disorder and entropy-driven cation clustering can result in nanoscale compositional inhomogeneities which detrimentally impact the electronic transport. Therefore, it is not sufficient to assess only the point defect behavior of new multinary tetrahedrally bonded compounds; effects such as structural disorder and extended antisite defects must also be considered. Altogether, this review provides a framework for evaluating tetrahedrally bonded semiconducting compounds with respect to their defect behavior for photovoltaic and other applications, and suggests new materials that may not be as prone to such imperfections.« less

A review of defects and disorder in multinary tetrahedrally bonded semiconductors [Defects and disorder in multinary tetrahedrally bonded semiconductors studied by experiment and theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baranowski, Lauryn L.; Zawadzki, Pawel; Lany, Stephan

Defects are critical to understanding the electronic properties of semiconducting compounds, for applications such as light-emitting diodes, transistors, photovoltaics, and thermoelectrics. In this review, we describe our work investigating defects in tetrahedrally bonded, multinary semiconductors, and discuss the place of our research within the context of publications by other groups. We applied experimental and theory techniques to understand point defects, structural disorder, and extended antisite defects in one semiconductor of interest for photovoltaic applications, Cu 2SnS 3. We contrast our findings on Cu 2SnS 3 with other chemically related Cu-Sn-S compounds, as well as structurally related compounds such as Cumore » 2ZnSnS 4 and Cu(In,Ga)Se 2. We find that evaluation of point defects alone is not sufficient to understand defect behavior in multinary tetrahedrally bonded semiconductors. In the case of Cu 2SnS 3 and Cu 2ZnSnS 4, structural disorder and entropy-driven cation clustering can result in nanoscale compositional inhomogeneities which detrimentally impact the electronic transport. Therefore, it is not sufficient to assess only the point defect behavior of new multinary tetrahedrally bonded compounds; effects such as structural disorder and extended antisite defects must also be considered. Altogether, this review provides a framework for evaluating tetrahedrally bonded semiconducting compounds with respect to their defect behavior for photovoltaic and other applications, and suggests new materials that may not be as prone to such imperfections.« less

Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nano-structured thin films

NASA Astrophysics Data System (ADS)

Jose, Edwin; Kumar, M. C. Santhosh

2016-09-01

We report the deposition of nanostructured Cu-Zn-S composite thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. The structural, morphological, optical, photoluminescence and electrical properties of Cu-Zn-S thin films are investigated. The results of X-ray diffraction (XRD) and Raman spectroscopy studies indicate that the films exhibit a ternary Cu-Zn-S structure rather than the Cu xS and ZnS binary composite. Scanning electron microscope (SEM) studies show that the Cu-Zn-S films are covered well over glass substrates. The optical band gap energies of the Cu-Zn-S films are calculated using UV-visible absorption measurements, which are found in the range of 2.2 to 2.32 eV. The room temperature photoluminescence studies show a wide range of emissions from 410 nm to 565 nm. These emissions are mainly due to defects and vacancies in the composite system. The electrical studies using Hall effect measurements show that the Cu-Zn-S films are having p-type conductivity.

Microstructure and properties of Cu-Sn-Zn-TiO 2 nano-composite coatings on mild steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Weidong; Cao, Di; Jin, Yunxue

Cu-Sn-Zn coatings have been widely used in industry for their unique properties, such as good conductivity, high corrosion resistance and excellent solderability. To further improve the mechanical performance of Cu-Sn-Zn coatings, powder-enhanced method was applied and Cu-Sn-Zn-TiO 2 nano-composite coatings with different TiO 2 concentration were fabricated. The microstructure of Cu-Sn-Zn-TiO 2 nano-composite coatings were investigated by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The mechanical properties of coatings including microhardness and wear resistance were studied. The results indicate that the incorporation of TiO 2 nanoparticle can significantly influence the properties of Cu-Sn-Zn coatings. The microhardness of Cu-Sn-Zn coatingmore » was increased to 383 HV from 330 HV with 1 g/L TiO 2 addition. Also, the corrosion resistance of coating was enhanced. The effects of TiO 2 nanoparticle concentration on the microstructure, mechanical properties and corrosion resistance of Cu-Sn-Zn-TiO 2 nano-composite coatings were discussed.« less

Microstructure and properties of Cu-Sn-Zn-TiO 2 nano-composite coatings on mild steel

DOE PAGES

Gao, Weidong; Cao, Di; Jin, Yunxue; ...

2018-04-18

Cu-Sn-Zn coatings have been widely used in industry for their unique properties, such as good conductivity, high corrosion resistance and excellent solderability. To further improve the mechanical performance of Cu-Sn-Zn coatings, powder-enhanced method was applied and Cu-Sn-Zn-TiO 2 nano-composite coatings with different TiO 2 concentration were fabricated. The microstructure of Cu-Sn-Zn-TiO 2 nano-composite coatings were investigated by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The mechanical properties of coatings including microhardness and wear resistance were studied. The results indicate that the incorporation of TiO 2 nanoparticle can significantly influence the properties of Cu-Sn-Zn coatings. The microhardness of Cu-Sn-Zn coatingmore » was increased to 383 HV from 330 HV with 1 g/L TiO 2 addition. Also, the corrosion resistance of coating was enhanced. The effects of TiO 2 nanoparticle concentration on the microstructure, mechanical properties and corrosion resistance of Cu-Sn-Zn-TiO 2 nano-composite coatings were discussed.« less

ZnO nanowires for tunable near-UV/blue LED

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno

2012-02-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. Markedly improved performances are expected from nanostructured active layers for light emission. Nanowires can act as direct waveguides and favor light extraction without the use of lenses and reflectors. Moreover, the use of wires avoids the presence of grain boundaries and then the emission efficiency should be boosted by the absence of non-radiative recombinations at the joint defects. Electrochemical deposition technique was used for the preparation of ZnO-NWs based light emitters. Nanowires of high structural and optical quality have been epitaxially grown on p-GaN single crystalline films substrates. We have shown that the emission is directional with a wavelength that was tuned and red-shifted toward the visible region by doping with Cu in ZnO NWs.

Efficient optical activation of Eu3+ ions doped in ZnGa2O4 thin films: Correlation between crystalline phase and photoluminescence

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Shinojima, Hiroyuki

2018-06-01

The physicochemical properties of Eu-doped zinc gallate (ZnGaxO1+1.5x:Eu) (1 < x < 6) thin films were investigated by means of photoluminescence (PL) triggered by band-to-band transitions of the host crystal at λ = 325 nm. Close correspondence between PL spectra and crystalline phases was verified by performing combinatorial measurements over four-inch substrates on which there was a spread of Ga/Zn composition ratios. The phase formation kinetics for deposition with H2O as an oxygen source gas followed by post annealing were similar to those of hydrothermal synthesis. ZnGa2O4 preferentially formed for a wide range of compositions between 1 < x < 4 and post annealing temperatures between 400 and 800 °C; intense emissions from Eu3+ ions were observed from the films. In contrast, the phase formation kinetics for deposition with O2 gas followed by post annealing were similar to those of solid-state reactions. Vacuum annealing above 500 °C caused preferential losses of Ga atoms and precipitation of Zn2Ga2O5 crystallites at x < 4, whereas ZnGa2O4 formed when a large amount of Ga (x > 6) was initially contained in the as-deposited state. The resulting PL spectra from Zn2Ga2O5 exhibited only a broad emission band from 450 to 700 nm, which was ascribed to defects in the poorly crystallized Zn:Ga = 1:1 phase. When the films deposited with O2 were post annealed in an O2 ambient, Zn atoms were lost, producing β-Ga2O3 as the primary phase accompanied with ZnGa2O4. The resulting Eu3+ emission was very weak, possibly because the Eu3+ ions attached to Ga2O3 domains were not emission-active and/or could not be efficiently excited due to wide bandgap (5 eV). When ZnGa2O4:Eu films were crystallized during deposition at elevated temperatures, weak emissions only from Eu3+ ions were observed. Taken together, these experimental results indicate that Eu3+ ions attached to ZnGa2O4 are highly emission-active; i.e., ZnGa2O4 is a particularly good host crystal with which to secure optical activation of doped Eu3+ ions.

Synthesis and characterization of Cu-Zn/TiO2 for the photocatalytic conversion of CO2 to methane.

PubMed

Rana, Adeem Ghaffar; Ahmad, Waqar; Al-Matar, Ali; Shawabkeh, Reyad; Aslam, Zaheer

2017-05-01

Different Cu-Zn/TiO 2 catalysts were synthesized by using the wet impregnation method. The prepared catalysts were used for the conversion of CO 2 into methane by photocatalysis. Various characterization techniques were used to observe the surface morphology, crystalline phase, Brunauer-Emmett-Teller (BET) surface area, presence of impregnated Cu and Zn, and functional group. Scanning electron microscope analysis showed spherical morphology, and slight agglomeration of catalyst particles was observed. BET analysis revealed that the surface area of the catalyst was decreased from 10 to 8.5 m 2 /g after impregnation of Cu and Zn over TiO 2 support. Synergetic effect of Cu and Zn over TiO 2 support (Cu 2.6 /TiO 2 , Zn 0.5 /TiO 2 and Cu 2.6 -Zn 0.5 /TiO 2 ) and the effects of Cu loading (0, 1.8, 2.1, 2.6 and 2.9 wt%) were also investigated at different feed molar ratios of H 2 /CO 2 (2:1 and 4:1). The Cu 2.6 -Zn 0.5 /TiO 2 catalyst showed a maximum conversion of 14.3% at a feed molar ratio of 4. The addition of Zn over the catalyst surface increased the conversion of CO 2 from 10% to 14.3% which might be due to synergy of Cu and Zn over TiO 2 support.

Real structure of (Sb1/3Zn2/3)GaO3(ZnO)3, a member of the homologous series ARO3(ZnO)m with ordered site occupation

NASA Astrophysics Data System (ADS)

Garling, Jennifer; Assenmacher, Wilfried; Schmid, Herbert; Longo, Paolo; Mader, Werner

2018-02-01

The hitherto unknown compound (Sb1/3Zn2/3)GaO3(ZnO)3, a member of the homologous series with general formula ARO3(ZnO)m (A,R = trivalent metal cation), was prepared by solid state methods from the binary oxides in sealed Pt-tubes. The structure of (Sb1/3Zn2/3)GaO3(ZnO)3 has been determined by X-ray diffraction from flux-grown single crystals (R 3 ̅ m , Z = 3, aR = 3.2387(7) Å, cR = 41.78(1) Å. The analysis revealed that (Sb1/3Zn2/3)GaO3(ZnO)m is isostructural with InGaO3(ZnO)m, where In3+ on octahedral sites is replaced by Sb5+ and Zn2+ in a ratio of 1:2, preserving an average charge of 3+. (Sb1/3Zn2/3)GaO3(ZnO)3 was furthermore analyzed by electron diffraction, High Angle Annular Dark Field (HAADF) scanning TEM, and high precision EELS spectroscopic imaging, where a periodic ordering of SbO6 octahedra connected via edge sharing to six ZnO6 octahedra in the octahedral layers in a honeycomb motif is found. Due to the large lateral distance of ca. 1.4 nm between adjacent octahedral layers, electrostatic interaction might hardly dictate Sb and Zn positions in neighbouring layers, and hence is a characteristic of the real structure of (Sb1/3Zn2/3)GaO3(ZnO)3. A structure model of the compound in space group P3112 (Nr. 151) with strictly ordered and discrete Sb and Zn positions is derived by crystallographic transformations as closest approximant for the real structure of (Sb1/3Zn2/3)GaO3(ZnO)3. UV-vis measurements confirm this compound to be a transparent oxide with an optical band gap in the UV region with Eg = 3.15 eV.

Trace amounts of Cu²⁺ ions influence ROS production and cytotoxicity of ZnO quantum dots.

PubMed

Moussa, Hatem; Merlin, Christophe; Dezanet, Clément; Balan, Lavinia; Medjahdi, Ghouti; Ben-Attia, Mossadok; Schneider, Raphaël

2016-03-05

3-Aminopropyltrimethoxysilane (APTMS) was used as ligand to prepare ZnO@APTMS, Cu(2+)-doped ZnO (ZnO:Cu@APTMS) and ZnO quantum dots (QDs) with chemisorbed Cu(2+) ions at their surface (ZnO@APTMS/Cu). The dots have a diameter of ca. 5 nm and their crystalline and phase purities and composition were established by X-ray diffraction, transmission electron microscopy, UV-visible and fluorescence spectroscopies and by X-ray photoelectron spectroscopy. The effect of Cu(2+) location on the ability of the QDs to generate reactive oxygen species (ROS) under light irradiation was investigated. Results obtained demonstrate that all dots are able to produce ROS (OH, O2(-), H2O2 and (1)O2) and that ZnO@APTMS/Cu QDs generate more OH and O2(-) radicals and H2O2 than ZnO@APTMS and ZnO:Cu@APTMS QDs probably via mechanisms associating photo-induced charge carriers and Fenton reactions. In cytotoxicity experiments conducted in the dark or under light exposure, ZnO@APTMS/Cu QDs appeared slightly more deleterious to Escherichia coli cells than the two other QDs, therefore pointing out the importance of the presence of Cu(2+) ions at the periphery of the nanocrystals. On the other hand, with the lack of photo-induced toxicity, it can be inferred that ROS production cannot explain the cytotoxicity associated to the QDs. Our study demonstrates that both the production of ROS from ZnO QDs and their toxicity may be enhanced by chemisorbed Cu(2+) ions, which could be useful for medical or photocatalytic applications. Copyright © 2015 Elsevier B.V. All rights reserved.

Thermochemistry of paddle wheel MOFs: Cu-HKUST-1 and Zn-HKUST-1.

PubMed

Bhunia, Manas K; Hughes, James T; Fettinger, James C; Navrotsky, Alexandra

2013-06-25

Metal-organic framework (MOF) porosity relies upon robust metal-organic bonds to retain structural rigidity upon solvent removal. Both the as-synthesized and activated Cu and Zn polymorphs of HKUST-1 were studied by room temperature acid solution calorimetry. Their enthalpies of formation from dense assemblages (metal oxide (ZnO or CuO), trimesic acid (TMA), and N,N-dimethylformamide (DMF)) were calculated from the calorimetric data. The enthalpy of formation (ΔHf) of the as-synthesized Cu-HKUST-H2O ([Cu3TMA2·3H2O]·5DMF) is -52.70 ± 0.34 kJ per mole of Cu. The ΔHf for Zn-HKUST-DMF ([Zn3TMA2·3DMF]·2DMF) is -54.22 ± 0.57 kJ per mole of Zn. The desolvated Cu-HKUST-dg [Cu3TMA2] has a ΔHf of 16.66 ± 0.51 kJ/mol per mole Cu. The ΔHf for Zn-HKUST-amorph [Zn3TMA2·2DMF] is -3.57 ± 0.21 kJ per mole of Zn. Solvent stabilizes the Cu-HKUST-H2O by -69.4 kJ per mole of Cu and Zn-HKUST-DMF by at least -50.7 kJ per mole of Zn. Such strong chemisorption of solvent is similar in magnitude to the strongly exothermic binding at low coverage for chemisorbed H2O on transition metal oxide nanoparticle surfaces. The strongly exothermic solvent-framework interaction suggests that solvent can play a critical role in obtaining a specific secondary building unit (SBU) topology.

The Cu2ZnSnSe4 thin films solar cells synthesized by electrodeposition route

NASA Astrophysics Data System (ADS)

Li, Ji; Ma, Tuteng; Wei, Ming; Liu, Weifeng; Jiang, Guoshun; Zhu, Changfei

2012-06-01

An electrodeposition route for preparing Cu2ZnSnSe4 thin films for thin film solar cell absorber layers is demonstrated. The Cu2ZnSnSe4 thin films are prepared by co-electrodeposition Cu-Zn-Sn metallic precursor and subsequently annealing in element selenium atmosphere. The structure, composition and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectrometry, energy dispersive spectrometry (EDS) and UV-VIS absorption spectroscopy. The Cu2ZnSnSe4 thin film with high crystalline quality was obtained, the band gap and absorption coefficient were 1.0 eV and 10-4 cm-1, which is quite suitable for solar cells fabrication. A solar cell with the structure of ZnO:Al/i-ZnO/CdS/Cu2ZnSnSe4/Mo/glass was fabricated and achieved an conversion efficiency of 1.7%.

Defect evolution and its impact on the ferromagnetism of Cu-doped ZnO nanocrystals upon thermal treatment: A positron annihilation study

NASA Astrophysics Data System (ADS)

Chen, Zhi-Yuan; Chen, Yuqian; Zhang, Q. K.; Qi, N.; Chen, Z. Q.; Wang, S. J.; Li, P. H.; Mascher, P.

2017-01-01

CuO/ZnO nanocomposites with 4 at. % CuO were annealed in air at various temperatures between 100 and 1200 °C to produce Cu-doped ZnO nanocrystals. X-ray diffraction shows that a CuO phase can be observed in the CuO/ZnO nanocomposites annealed at different temperatures, and the Cu-doped ZnO nanocrystals are identified to be of wurtzite structure. The main peak (101) appears at slightly lower diffraction angles with increasing annealing temperature from 400 up to 1200 °C, which confirms the successful doping of Cu into the ZnO lattice above 400 °C. Scanning electron microscopy indicates that most particles in the CuO/ZnO nanocomposites are isolated when annealing at 100-400 °C, but these particles have a tendency to form clusters or aggregates as the annealing temperature increases from 700 to 1000 °C. Positron annihilation measurements reveal a large number of vacancy defects in the interface region of the nanocomposites, and they are gradually recovered with increasing annealing temperature up to 1000 °C. Room-temperature ferromagnetism can be observed in the CuO/ZnO nanocomposites, and the magnetization decreases continuously with increasing annealing temperature. However, there may be several different origins of ferromagnetism in the CuO/ZnO nanocomposites. At low annealing temperatures, the ferromagnetism originates from the CuO nanograins, and the ferromagnetism of CuO nanograins decreases with an increase in the grain size after subsequent higher temperature annealing, which leads to the weakening of ferromagnetism in the CuO/ZnO nanocomposites. After annealing from 400 to 1000 °C, the ferromagnetism gradually vanishes. The ferromagnetism is probably induced by Cu substitution but is mediated by vacancy defects in the CuO/ZnO nanocomposites. The disappearance of ferromagnetism coincides well with the recovery of vacancy defects. It can be inferred that the ferromagnetism is mediated by vacancy defects that are distributed in the interface region.

Cyclotron production of 61Cu using natural Zn & enriched 64Zn targets

NASA Astrophysics Data System (ADS)

Asad, A. H.; Smith, S. V.; Chan, S.; Jeffery, C. M.; Morandeau, L.; Price, R. I.

2012-12-01

Copper-61 (61Cu) shares with 64Cu certain advantages for PET diagnostic imaging, but has a shorter half-life (3.4hr vs. 12.7hr) and a greater probability of positron production per disintegration (61% vs. 17.9%). One important application is for in vivo imaging of hypoxic tissue. In this study 61Cu was produced using the 64Zn(p,α)61Cu reaction on natural Zn or enriched 64Zn targets. The enriched 64Zn (99.82%) was electroplated onto high purity gold or silver foils or onto thin Al discs. A typical target bombardment used 30μA; at 11.7, 14.5 or 17.6MeV over 30-60min. The 61Cu (radiochemical purity of >95%) was separated using a combination of cation and anion exchange columns. The 64Zn target material was recovered after each run, for re-use. In a direct comparison with enriched 64Zn-target results, 61Cu production using the cheaper natZn target proved to be an effective alternative.

Effects of Cu(2+) and Zn(2+) on growth and physiological characteristics of green algae, Cladophora.

PubMed

Cao, De-ju; Xie, Pan-pan; Deng, Juan-wei; Zhang, Hui-min; Ma, Ru-xiao; Liu, Cheng; Liu, Ren-jing; Liang, Yue-gan; Li, Hao; Shi, Xiao-dong

2015-11-01

Effects of various concentrations of Cu(2+) and Zn(2+) (0.0, 0.1, 0.25, 0.5, or 1.0 mg/L) on the growth, malondialdehyde (MDA), the intracellular calcium, and physiological characteristics of green algae, Cladophora, were investigated. Low Zn(2+) concentrations accelerated the growth of Cladophora, whereas Zn(2+) concentration increases to 0.25 mg/L inhibited its growth. Cu(2+) greatly influences Cladophora growth. The photosynthesis of Cladophora decreased under Zn(2+) and Cu(2+) stress. Cu(2+) and Zn(2+) treatment affected the content of total soluble sugar in Cladophora and has small increases in its protein content. Zn(2+) induced the intracellular calcium release, and copper induced the intracellular calcium increases in Cladophora. Exposure to Cu(2+) and Zn(2+) induces MDA in Cladophora. The stress concent of Cu(2+) was strictly correlated with the total soluble sugar content, Chla+Chlb, and MDA in Cladophora, and the stress concent of Zn(2+) was strictly correlated with the relative growth rate (RGR) and MDA of Cladophora.

Cu-Zn isotope constraints on the provenance of air pollution in Central Europe: Using soluble and insoluble particles in snow and rime.

PubMed

Novak, Martin; Sipkova, Adela; Chrastny, Vladislav; Stepanova, Marketa; Voldrichova, Petra; Veselovsky, Frantisek; Prechova, Eva; Blaha, Vladimir; Curik, Jan; Farkas, Juraj; Erbanova, Lucie; Bohdalkova, Leona; Pasava, Jan; Mikova, Jitka; Komarek, Arnost; Krachler, Michael

2016-11-01

Copper (Cu) and zinc (Zn) isotope ratios can be used to fingerprint sources and dispersion pathways of pollutants in the environment. Little is known, however, about the potential of δ 65 Cu and δ 66 Zn values in liquid and solid forms of atmospheric deposition to distinguish between geogenic, industrial, local and remote sources of these potentially toxic base metals. Here we present Cu-Zn deposition fluxes at 10 mountain-top sites in the Czech Republic, a region affected by extremely high industrial emission rates 25 years ago. Additionally, we monitored isotope composition of Cu and Zn in vertical and horizontal atmospheric deposition at two sites. We compared δ 65 Cu and δ 66 Zn values in snow and rime, extracted by diluted HNO 3 and concentrated HF. Cu and Zn isotope signatures of industrial pollution sources were also determined. Cu and Zn deposition fluxes at all study sites were minute. The mean δ 65 Cu value of atmospheric deposition (-0.07‰) was higher than the mean δ 65 Cu value of pollution sources (-1.17‰). The variability in δ 65 Cu values of atmospheric deposition was lower, compared to the pollution sources. The mean δ 66 Zn value of atmospheric deposition (-0.09‰) was slightly higher than the mean δ 66 Zn value of pollution sources (-0.23‰). The variability in δ 66 Zn values of atmospheric deposition was indistinguishable from that of pollution sources. The largest isotope differences (0.35‰) were observed between the insoluble and soluble fractions of atmospheric deposition. These differences may result from different sources of Cu/Zn for each fraction. The difference in isotope composition of soluble and insoluble particles appears to be a promising tool for pollution provenance studies in Central Europe. Copyright © 2016 Elsevier Ltd. All rights reserved.

Changes in urinary Cu, Zn, and Se levels in cancer patients after treatment with Sha Shen Mai Men Dong Tang

PubMed Central

Lai, Tung-Yuan; Kuo, Hsien-Wen

2015-01-01

Sha Shen Mai Men Dong Tang (SMD-2; 沙參麥冬湯 shā shēn mài dōng tāng) is a Chinese medicinal herb (CMH; 中草藥 zhōng cǎo yào) used to treat symptoms associated with cancer therapy. The objective of this study was to assess the effect of SMD-2 on the levels of urinary copper (Cu), zinc (Zn), and selenium (Se) in lung cancer patients and head and neck cancer patients receiving chemoradiotherapy. Forty-two head and neck cancer patients and 10 lung cancer patients participated in our clinical trial. Each patient received chemoradiotherapy for 4 weeks. In addition, each patient was treated with SMD-2 for 8 weeks, including 2 weeks prior to and after the chemoradiotherapy treatment. Comparison of urinary Cu, Zn, and Se levels and the ratios of Zn to Cu and Se to Cu at three time points in the two types of cancer were assessed using the generalized estimating equations (GEEs). After the patients received chemoradiotherapy for 4 weeks, SMD-2 treatment was found to be associated with a significant decrease in urinary Cu levels, whereas urinary Zn and Se levels increased significantly. In addition, the ratios of Zn to Cu and Se to Cu in the urine samples of these patients also increased significantly. Both the urinary Zn levels and the ratio of Zn to Cu in head and neck cancer patients were significantly higher than in lung cancer patients. Urinary Zn and Se levels and the ratios of Zn to Cu and Se to Cu, but not urinary Cu levels, increased significantly during and after treatment when assessed using the GEE model. The SMD-2 treatments significantly increased Zn and Se levels in the urine of head and neck cancer patients. Increased Zn and Se levels in urine strengthened immune system. PMID:27114935

Luminescence, magnetic and vibrational properties of novel heterometallic niccolites [(CH3)2NH2][CrIIIMII(HCOO)6] (MII=Zn, Ni, Cu) and [(CH3)2NH2][AlIIIZnII(HCOO)6]:Cr3+

NASA Astrophysics Data System (ADS)

Mączka, Mirosław; Pietraszko, Adam; Pikul, Adam; Hermanowicz, Krzysztof

2016-01-01

We report synthesis of three novel heterometallic MOFs, [(CH3)2NH2][CrIIIMII(HCOO)6] with M=Zn (DMCrZn), Ni (DMCrNi) and Cu (DMCrCu), crystallizing in the niccolite type structure. We also successfully synthesized [(CH3)2NH2][AlCu(HCOO)6] (DMAlCu) and [(CH3)2NH2][AlZn(HCOO)6] doped with 5.8 mol% of Cr3+ (DMAlZn: Cr). X-ray diffraction shows that DMCrZn, DMCrNi and DMAlZn: Cr3+ crystallize in the trigonal structure (space group P 3 bar1c) while DMCrCu and DMAlCu crystallize in the monoclinic structure (space group C2/c). Magnetic investigation of the chromium-based niccolites reveals no magnetic order in DMCrZn and ferromagnetic order in DMCrNi and DMCrCu below 23 and 11 K, respectively. Optical studies show that DMCrZn and DMAlZn: Cr samples exhibit efficient emission typical for chromium ions located at sites of strong crystal field with the Dq/B values 2.62 and 2.67, respectively. We also discuss role of geometrical parameters in stability of the perovskite and niccolite structures.

Trace elements quantified by the APXS on Mars

NASA Astrophysics Data System (ADS)

Gellert, R.; Berger, J. A.; Boyd, N.; O'Connell-Cooper, C.; Desouza, E.; Thompson, L. M.; VanBommel, S.; Yen, A.

2017-12-01

The APXS accurately quantifies many trace elements within the dime-sized sample: Ni, Cu, Zn, Ga, Ge, Pb, Br, Se, As, and Y with 20 ppm detection limit (DL) and Rb, Sr, Zr, Co, Cr, and Mn with 200 ppm DL. Together with the major and minor elements, this gives important constraints for a variety of formation processes of the investigated soils, floats or extensive bedrock on Mars. The global soil, found at all rover landing sites, was used to define an average Mars value for Ni, Zn, Cr and Mn, with a consistent value of Fe/Mn 50 for soils and igneous rocks. All other APXS trace elements are below DL. Strong enrichments or depletions can both give evidence for the formation processes and link together groups of rocks and indicate their common diagenetic origin. Felsic rocks at Gale and Gusev have Cr, Ni and Zn far below soil, indicating their likely igneous origin. Further, similarly low values are found in elevated silica samples in the Murray Fm. at Gale where these elements have been mobilized and leached by fluids. High Sr and Ga was found in the host rock surrounding the Garden City vein system, which contains also high Ge, Mn and Cu, indicating mobilization in high temperature and/or acidic fluids after the Murray was lithified. The fracture fill sample Stephen at Windjana is high in Zn, Co and Cu. Germanium is enriched in the Murray Fm with very consistent values of about 100 ppm over many kilometers and 200 meters elevation, similar to perviously found bedrock at Yellowknife Bay and Windjana in Gale. Zinc is highly elevated but changes significantly with elevation in Murray, often correlated with Fe/Mn, possibly indicating changing redox conditions. Pb and Se are highly enriched at Pahrump (150, 75 ppm, resp.), drop first to low values and increase again uphill towards HematiteRidge. Nodules found at Pahrump show striking evidence for (Mg, Ni)-sulfates with Nickel up to 4% in the sulfates. All together these trends might indicate hydrothermal activity. The MER APXS instruments with somewhat higher DL found similar patterns. Elevated Ge was found at Home plate, Gusev crater, and at the rim of Endeavour crater at Meridiani Planum. Together with detailed investigations of SNC meteorites, the APXS detected trace elements supplement the bulk chemistry significantly and allow new insights into the formation processes encountered on Mars

First Measurement of the Radionuclide Purity of the Therapeutic Isotope 67Cu Produced by 68Zn(n,x) Reaction Using natC(d,n) Neutrons

NASA Astrophysics Data System (ADS)

Sato, Nozomi; Tsukada, Kazuaki; Watanabe, Satoshi; Ishioka, Noriko S.; Kawabata, Masako; Saeki, Hideya; Nagai, Yasuki; Kin, Tadahiro; Minato, Futoshi; Iwamoto, Nobuyuki; Iwamoto, Osamu

2014-07-01

We have for the first time studied the radionuclide purity of the therapeutic isotope 67Cu produced by the 68Zn(n,x)67Cu reaction. The neutrons were obtained by the natC(d,n) reaction using 40 MeV deuterons. We measured the γ-ray spectra of the reaction products produced by bombarding an enriched 68ZnO sample with the neutrons with a high-purity Ge detector. We found that the relative production yields of the impurity radionuclides 64Cu, 65Zn, and 69mZn to 67Cu are extremely low. The result indicates that the 68Zn(n,x)67Cu reaction is the most promising among those proposed routes until now for producing high-quality 67Cu, and could solve a longstanding problem of establishing an appropriate production method for 67Cu.

Visible light-driven photocatalytic H{sub 2}-generation activity of CuS/ZnS composite particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Liang; Chen, Hua; Huang, Jianhua, E-mail: jhhuang@zstu.edu.cn

2015-04-15

Highlights: • Preparation of CuS/ZnS composite photocatalyst by cation-exchange reaction. • Visible light photocatalytic activity for H{sub 2} evolution without cocatalyst. • The H{sub 2}-evolution rate from water splitting depends on the CuS content. • The highest rate of H{sub 2} evolution is obtained with CuS (0.5 mol%)/ZnS composite. - Abstract: CuS/ZnS composite particles with diameter of 200–400 nm were successfully prepared by a simple cation-exchange reaction using ZnS spheres as a precursor. CuS nanoparticles with a few nanometers in diameter were observed on the surface of composite particles. The synthesized CuS/ZnS composite particles showed photocatalytic property effective for H{submore » 2} evolution from an aqueous Na{sub 2}S and Na{sub 2}SO{sub 3} solution under visible light irradiation without any cocatalysts. The rate of H{sub 2} generation was found to be strongly dependent on the CuS content. The highest rate of H{sub 2} evolution reached 695.7 μmol h{sup −1} g{sup −1}, which was almost 7 times as high as that of the mechanical mixture of CuS and ZnS. The enhancement in the photocatalytic activity of CuS/ZnS composite particles is supposed to be due to the direct interfacial charge transfer of the CuS/ZnS heterojunction.« less

Synthesis and photoelectrochemical properties of a novel CuO/ZnO nanorod photocathode for solar hydrogen generation

NASA Astrophysics Data System (ADS)

Shaislamov, Ulugbek; Lee, Heon-Ju

2016-10-01

Here, we present a facile synthesis method and photoelectrochemical characterizations of a p-type CuO-nanorod array photoelectrode with ZnO nanorod branches. Vertically-aligned CuO nanorods were synthesized by using direct oxidation of metallic Cu nanorods grown on a Cu substrate by using a facile template-assisted electrodeposition method. The formed CuONR/ZnONB hierarchically-structured photoelectrode exhibited remarkable photoelectrodechemical performance and outstanding stability compared to the CuO NR photoelectrode without ZnO NR branches. Morphological, optical and electrochemical characterizations were carried out in order to examine the effects of ZnO nanorod branches on the stability and the overall electrochemical performance of the electrode.

Dilute electrodeposition of TiO2 and ZnO thin film memristors on Cu substrate

NASA Astrophysics Data System (ADS)

Fauzi, F. B.; Ani, M. H.; Herman, S. H.; Mohamed, M. A.

2018-03-01

Memristor has become one of the alternatives to replace the current memory technologies. Fabrication of titanium dioxide, TiO2 memristor has been extensively studied by using various deposition methods. However, recently more researches have been done to explore the compatibility of other transition metal oxide, TMO such as zinc oxide, ZnO to be used as the active layer of the memristor. This paper highlights the simple and easy-control electrodeposition to deposit titanium, Ti and zinc, Zn thin film at room temperature and subsequent thermal oxidation at 600 °C. Gold, Au was then sputtered as top electrode to create metal-insulator-metal, MIM sandwich of Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors. The structural, morphological and memristive properties were characterized using Field Emission Scanning Electron Microscopy, FESEM, X-Ray Diffraction, XRD and current-voltage, I-V measurement. Both Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristivity were identified by the pinched hysteresis loop with resistive ratio of 1.2 and 1.08 respectively. Empirical study on diffusivity of Ti4+, Zn2+ and O2‑ ions in both metal oxides show that the metal vacancies were formed, thus giving rise to its memristivity. The electrodeposited Au/TiO2-Cu2O-CuO/Cu and Au/ZnO-Cu2O-CuO/Cu memristors demonstrate comparable performances to previous studies using other methods.

CuO and ZnO nanoparticles: phytotoxicity, metal speciation, and induction of oxidative stress in sand-grown wheat

NASA Astrophysics Data System (ADS)

Dimkpa, Christian O.; McLean, Joan E.; Latta, Drew E.; Manangón, Eliana; Britt, David W.; Johnson, William P.; Boyanov, Maxim I.; Anderson, Anne J.

2012-09-01

Metal oxide nanoparticles (NPs) are reported to impact plant growth in hydroponic systems. This study describes the impact of commercial CuO (<50 nm) and ZnO (<100 nm) NPs on wheat ( Triticum aestivum) grown in a solid matrix, sand. The NPs contained both metallic and non-metallic impurities to different extents. Dynamic light scattering and atomic force microscopy (AFM) assessments confirmed aggregation of the NPs to submicron sizes. AFM showed transformation of ZnO NPs from initial rhomboid shapes in water to elongated rods in the aqueous phase of the sand matrix. Solubilization of metals occurred in the sand at similar rates from CuO or ZnO NPs as their bulk equivalents. Amendment of the sand with 500 mg Cu and Zn/kg sand from the NPs significantly ( p = 0.05) reduced root growth, but only CuO NPs impaired shoot growth; growth reductions were less with the bulk amendments. Dissolved Cu from CuO NPs contributed to their phytotoxicity but Zn release did not account for the changes in plant growth. Bioaccumulation of Cu, mainly as CuO and Cu(I)-sulfur complexes, and Zn as Zn-phosphate was detected in the shoots of NP-challenged plants. Total Cu and Zn levels in shoot were similar whether NP or bulk materials were used. Oxidative stress in the NP-treated plants was evidenced by increased lipid peroxidation and oxidized glutathione in roots and decreased chlorophyll content in shoots; higher peroxidase and catalase activities were present in roots. These findings correlate with the NPs causing increased production of reactive oxygen species. The accumulation of Cu and Zn from NPs into edible plants has relevance to the food chain.

Structure of (Ga2O3)2(ZnO)13 and a unified description of the homologous series (Ga2O3)2(ZnO)(2n + 1).

PubMed

Michiue, Yuichi; Kimizuka, Noboru; Kanke, Yasushi; Mori, Takao

2012-06-01

The structure of (Ga(2)O(3))(2)(ZnO)(13) has been determined by a single-crystal X-ray diffraction technique. In the monoclinic structure of the space group C2/m with cell parameters a = 19.66 (4), b = 3.2487 (5), c = 27.31 (2) Å, and β = 105.9 (1)°, a unit cell is constructed by combining the halves of the unit cell of Ga(2)O(3)(ZnO)(6) and Ga(2)O(3)(ZnO)(7) in the homologous series Ga(2)O(3)(ZnO)(m). The homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) is derived and a unified description for structures in the series is presented using the (3+1)-dimensional superspace formalism. The phases are treated as compositely modulated structures consisting of two subsystems. One is constructed by metal ions and another is by O ions. In the (3 + 1)-dimensional model, displacive modulations of ions are described by the asymmetric zigzag function with large amplitudes, which was replaced by a combination of the sawtooth function in refinements. Similarities and differences between the two homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) and Ga(2)O(3)(ZnO)(m) are clarified in (3 + 1)-dimensional superspace. The validity of the (3 + 1)-dimensional model is confirmed by the refinements of (Ga(2)O(3))(2)(ZnO)(13), while a few complex phenomena in the real structure are taken into account by modifying the model.

Elastocaloric effect in CuAlZn and CuAlMn shape memory alloys under compression

PubMed Central

Qian, Suxin; Wang, Yi; Pillsbury, Thomas E.; Hada, Yoshiharu; Yamaguchi, Yuki; Fujimoto, Kenjiro; Hwang, Yunho; Radermacher, Reinhard; Cui, Jun; Yuki, Yoji; Toyotake, Koutaro; Takeuchi, Ichiro

2016-01-01

This paper reports the elastocaloric effect of two Cu-based shape memory alloys: Cu68Al16Zn16 (CuAlZn) and Cu73Al15Mn12 (CuAlMn), under compression at ambient temperature. The compression tests were conducted at two different rates to approach isothermal and adiabatic conditions. Upon unloading at a strain rate of 0.1 s−1 (adiabatic condition) from 4% strain, the highest adiabatic temperature changes (ΔTad) of 4.0 K for CuAlZn and 3.9 K for CuAlMn were obtained. The maximum stress and hysteresis at each strain were compared. The stress at the maximum recoverable strain of 4.0% for CuAlMn was 120 MPa, which is 70% smaller than that of CuAlZn. A smaller hysteresis for the CuAlMn alloy was also obtained, about 70% less compared with the CuAlZn alloy. The latent heat, determined by differential scanning calorimetry, was 4.3 J g−1 for the CuAlZn alloy and 5.0 J g−1 for the CuAlMn alloy. Potential coefficients of performance (COPmat) for these two alloys were calculated based on their physical properties of measured latent heat and hysteresis, and a COPmat of approximately 13.3 for CuAlMn was obtained. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’. PMID:27402936

Volatile Element Behavior During Melting and Vaporisation on Earth and Protoplanets.

NASA Astrophysics Data System (ADS)

Wood, B. J.; Norris, C. A.

2017-12-01

During accretion the Earth and many of the smaller bodies which were added to it, underwent periods of partial melting, vaporisation and re-condensation. This resulted in patterns of volatile element depletion relative to CI chondrite which are difficult to interpret. The behavior of moderately volatile elements (Pb, Cd, Zn,Cu, In,Tl etc) during these melting, vaporisation and condensation processes is usually approximated by the temperature of condensation from a gas of solar composition. Thus, Tl and In have low condensation temperatures and are regarded as the most volatile of this group. In order to test this volatility approximation we have studied the vaporisation behavior of 13 elements (Ag,Bi,Cd,Cr,Cu,Ga,Ge,In,Pb,Sb,Sn,Tl,Zn) from molten basalt at 1 atm pressure and oxygen fugacities between Ni-NiO and 2 log units below Fe-FeO. The relative volatilities of the elements turn out to be only weakly correlated with condensation temperature, indicating that the latter is a poor proxy for volatility on molten bodies. Cu, Zn and In for example all have similar volatility in the oxygen fugacity range of concern, despite the condensation temperature of Cu (1037K at 10-4bar) being 500K greater than that of In. The oxygen fugacity dependence of volatility indicates that the volatile species are, for all elements more reduced than the melt species. We addressed the differences between condensation temperature and relative volatility in 2 steps. Firstly we used metal-silicate partitioning experiments to estimate the activity coefficients of the trace element oxides in silicate melts. We then used available thermodynamic data to compute the vapor pressures of the stable species of these 13 elements over the silicate melt at oxygen fugacities ranging from Ni-NiO to about 6 log units below Fe-FeO, which approximates the solar gas. Thus we find that presence of Cl and S in the solar gas and the stable Cl and S species of In,Tl Ga Ge Cd and Sn are important contributing factors to volatility in the solar nebula. Our measured volatilities from silicate melt under reducing (S and Cl-absent) conditions are consistent with abundances in the silicate Earth, indicating that these moderately volatile elements were added to Earth in bodies which had undergone episodes of melting and vaporisation.

ZnO/p-GaN heterostructure for solar cells and the effect of ZnGa2O4 interlayer on their performance.

PubMed

Nam, Seung Yong; Choi, Yong Seok; Lee, Ju Ho; Park, Seong Ju; Lee, Jeong Yong; Lee, Dong Seon

2013-01-01

We report the usage of ZnO material as an alternative for n-GaN for realizing III-nitride based solar cell. The fabricated solar cell shows large turn-on voltage of around 8 volts and a rapid decrease of photocurrent at low bias voltage under darkness and 1-sun illumination conditions, respectively. This phenomenon can be attributed to the formation of high-resistive ultra-thin layers at the ZnO/ p-GaN junction interface during high temperature deposition. Transmission electron microscopy (TEM) studies carried out on the grown samples reveals that the ultra-thin layer consists of ZnGa2O4. It is found that the presence of insulating ZnGa2O4 film is detrimental in the performance of proposed heterostructure for solar cells.

Ab initio calculations on the initial stages of GaN and ZnO growth on lattice-matched ScAlMgO4 (0001) substrates

NASA Astrophysics Data System (ADS)

Guo, Yao; Wang, Yanfei; Li, Chengbo; Li, Xianchang; Niu, Yongsheng; Hou, Shaogang

2016-12-01

The initial stages of GaN and ZnO epitaxial growth on lattice-matched ScAlMgO4 substrates have been investigated by ab initio calculation. The geometrical parameters and electronic structure of ScAlMgO4 bulk and (0001) surface have been investigated by density-functional first-principles study. The effects of different surface terminations have been examined through surface energy and relaxation calculations. The O-Mg-O termination is more favorable than other terminations by comparing the calculated surface energies. It should be accepted as the appropriate surface structure in subsequent calculation. The initial stages of GaN and ZnO epitaxial growths are discussed based on the adsorption and diffusion of the adatoms on reconstructed ScAlMgO4 (0001) surface. According to theoretical characterizations, N adatom on the surface is more stable than Ga. O adatom is more favorable than Zn. These observations lead to the formation of GaN and ZnO epilayer and explain experimentally-confirmed in-plane alignment mechanisms of GaN and ZnO on ScAlMgO4 substrates. Furthermore, the polarity of GaN and ZnO surfaces on ScAlMgO4 (0001) at the initial growth stage have been explored by ab initio calculation. Theoretical studies indicate that the predominant growths of Ga-polar GaN and Zn-polar ZnO are determined by the initial growth stage.

Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

PubMed

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.

PubMed

Zhang, Lichun; Li, Qingshan; Shang, Liang; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2013-07-15

n-ZnO/p-GaN heterojunction light emitting diodes with different interfacial layers were fabricated by pulsed laser deposition. The electroluminescence (EL) spectra of the n-ZnO/p-GaN diodes display a broad blue-violet emission centered at 430 nm, whereas the n-ZnO/ZnS/p-GaN and n-ZnO/AlN/p-GaN devices exhibit ultraviolet (UV) emission. Compared with the AlN interlayer, which is blocking both electron and hole at hetero-interface, the utilization of ZnS as intermediate layer can lower the barrier height for holes and keep an effective blocking for electron. Thus, an improved UV EL intensity and a low turn-on voltage (~5V) were obtained. The results were studied by peak-deconvolution with Gaussian functions and were discussed using the band diagram of heterojunctions.

Isotopic variations of dissolved copper and zinc in stream waters affected by historical mining

USGS Publications Warehouse

Borrok, D.M.; Nimick, D.A.; Wanty, R.B.; Ridley, W.I.

2008-01-01

Zinc and Cu play important roles in the biogeochemistry of natural systems, and it is likely that these interactions result in mass-dependent fractionations of their stable isotopes. In this study, we examine the relative abundances of dissolved Zn and Cu isotopes in a variety of stream waters draining six historical mining districts located in the United States and Europe. Our goals were to (1) determine whether streams from different geologic settings have unique or similar Zn and Cu isotopic signatures and (2) to determine whether Zn and Cu isotopic signatures change in response to changes in dissolved metal concentrations over well-defined diel (24-h) cycles. Average ??66Zn and ??65Cu values for streams varied from +0.02??? to +0.46??? and -0.7??? to +1.4???, respectively, demonstrating that Zn and Cu isotopes are heterogeneous among the measured streams. Zinc or Cu isotopic changes were not detected within the resolution of our measurements over diel cycles for most streams. However, diel changes in Zn isotopes were recorded in one stream where the fluctuations of dissolved Zn were the largest. We calculate an apparent separation factor of ???0.3??? (66/64Zn) between the dissolved and solid Zn reservoirs in this stream with the solid taking up the lighter Zn isotope. The preference of the lighter isotope in the solid reservoir may reflect metabolic uptake of Zn by microorganisms. Additional field investigations must evaluate the contributions of soils, rocks, minerals, and anthropogenic components to Cu and Zn isotopic fluxes in natural waters. Moreover, rigorous experimental work is necessary to quantify fractionation factors for the biogeochemical reactions that are likely to impact Cu and Zn isotopes in hydrologic systems. This initial investigation of Cu and Zn isotopes in stream waters suggests that these isotopes may be powerful tools for probing biogeochemical processes in surface waters on a variety of temporal and spatial scales.

Aided phytoextraction of Cu, Pb, Zn, and As in copper-contaminated soils with tobacco and sunflower in crop rotation: Mobility and phytoavailability assessment.

PubMed

Hattab-Hambli, Nour; Motelica-Heino, Mikael; Mench, Michel

2016-02-01

Copper-contaminated soils were managed with aided phytoextraction in 31 field plots at a former wood preservation site, using a single incorporation of compost (OM) and dolomitic limestone (DL) followed by a crop rotation with tobacco and sunflower. Six amended plots, with increasing total soil Cu, and one unamended plot were selected together with a control uncontaminated plot. The mobility and phytoavailability of Cu, Zn, Cr and As were investigated after 2 and 3 years in soil samples collected in these eight plots. Total Cu, Zn, Cr and As concentrations were determined in the soil pore water (SPW) and available soil Cu and Zn fractions by DGT. The Cu, Zn, Cr and As phytoavailability was characterized by growing dwarf beans on potted soils and determining the biomass of their plant parts and their foliar ionome. Total Cu concentrations in the SPW increased with total soil Cu. Total Cu, Zn, Cr and As concentrations in the SPW decreased in year 3 as compared to year 2, likely due to annual shoot removals by the plants and the lixiviation. Available soil Cu and Zn fractions also declined in year 3. The Cu, Zn, Cr and As phytoavailability, assessed by their concentration and mineral mass in the primary leaves of beans, was reduced in year 3. Copyright © 2015 Elsevier Ltd. All rights reserved.

EXAFS analysis of a human Cu,Zn SOD isoform focused using non-denaturing gel electrophoresis

NASA Astrophysics Data System (ADS)

Chevreux, Sylviane; Solari, Pier Lorenzo; Roudeau, Stéphane; Deves, Guillaume; Alliot, Isabelle; Testemale, Denis; Hazemann, Jean Louis; Ortega, Richard

2009-11-01

Isoelectric point isoforms of a metalloprotein, copper-zinc superoxide dismutase (CuZnSOD), separated on electrophoresis gels were analyzed using X-ray Absorption Spectroscopy. Mutations of this protein are involved in familial cases of amyotrophic lateral sclerosis. The toxicity of mutants could be relied to defects in the metallation state. Our purpose is to establish analytical protocols to study metallation state of protein isoforms such as those from CuZnSOD. We previously highlighted differences in the copper oxidation state between CuZnSOD isoforms using XANES. Here, we present the first results for EXAFS analyses performed at Cu and Zn K-edge on the majoritary expressed isoform of human CuZnSOD separated on electrophoresis gels.

Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells

DOEpatents

Noufi, Rommel; Gabor, Andrew M.; Tuttle, John R.; Tennant, Andrew L.; Contreras, Miguel A.; Albin, David S.; Carapella, Jeffrey J.

1995-01-01

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells

DOEpatents

Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

1995-08-15

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

Preparation, structural, photoluminescence and magnetic studies of Cu doped ZnO nanoparticles co-doped with Ni by sol-gel method

NASA Astrophysics Data System (ADS)

Theyvaraju, D.; Muthukumaran, S.

2015-11-01

Zn0.96-xNi0.04CuxO nanoparticles have been synthesized by varying different Cu concentrations between 0% and 4% using simple sol-gel method. X-ray diffraction studies confirmed the hexagonal structure of the prepared samples. The formation of secondary phases, CuO (111) and Zn (101) at higher Cu content is due un-reacted Cu2+ and Zn2+ ions present in the solution which reduces the interaction between precursor ions and surfaces of ZnO. Well agglomerated and rod-like structure noticed at Cu=4% greatly de-generate and enhanced the particle size. The nominal elemental composition of Zn, Cu, Ni and O was confirmed by energy dispersive X-ray analysis. Even though energy gap was increased (blue-shift) from Cu=0-2% by quantum size effect, the s-d and p-d exchange interactions between the band electrons of ZnO and localized d electrons of Cu and Ni led to decrease (red-shift) the energy gap at Cu=4%. Presence of Zn-Ni-Cu-O bond was confirmed by Fourier transform infrared analysis. Ultraviolet emission by band to band electronic transition and defect related blue emission were discussed by photoluminescence spectra. The observed optical properties concluded that the doping of Cu in the present system is useful to tune the emission wavelength and hence acting as the important candidates for the optoelectronic device applications. Ferromagnetic ordering of Cu=2% sample was enhanced by charge carrier concentration where as the antiferromagnetic interaction between neighboring Cu-Cu ions suppressed the ferromagnetism at higher doping concentrations of Cu.

Theory of copper impurities in ZnO

NASA Astrophysics Data System (ADS)

Lyons, John; Alkauskas, Audrius; Janotti, Anderson; van de Walle, Chris G.

Due to its connection to deep luminescence signals and its potential use as an acceptor dopant, copper has been one the most studied impurities in ZnO. From experiment, copper incorporating on the Zn site (CuZn) is known to lead to an acceptor level residing near the conduction band of ZnO, making CuZn an exceedingly deep acceptor. CuZn in ZnO has also long been linked with broad 2.4 eV green luminescence (GL) signals. In this work we explore the electrical and optical properties of Cu in ZnO using density functional theory (DFT). Due to the limitations of traditional forms of DFT, an accurate theoretical description of the electrical and optical properties of such deep centers has been difficult to achieve. Here we employ a screened hybrid density functional (HSE) to calculate the properties of Cu in ZnO. We determine the thermodynamic transition levels associated with CuZn in ZnO as well as the associated luminescence lineshapes of characteristic optical transitions. We find that HSE-calculated optical transitions are in close agreement with experimental studies. This work was supported in part by NSF and by ARO.

The effect of Ti-B on stabilization of Cu-Zn-Al martensite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stipcich, M.; Romero, R.

1998-10-05

The application of shape memory effect in devices requires, in many cases, stable and reliable transformation temperatures. However, as a consequence of diffusional processes, in Cu-based shape memory alloys, reverse transformation temperature significantly rises after aging at temperatures above room temperature. This generally unwanted behavior is usually referred to as the stabilization of martensite. Numerous investigations have been carried out on this subject as reviewed by Ahlers and Chandrasekaran et al. Within the Cu-based alloys the Cu-Zn-Al are claimed to be more prone to stabilization than Cu-Al-Ni on aging. It has been proposed that in the Cu-Zn-Al the stabilization ismore » due to the interchange of Cu and Zn atoms assisted by vacancies, changing, consequently, the long range order inherited from the {beta} phase. In the present work, the authors investigate the stabilization behavior of polycrystalline samples of stress induced Cu-Zn-Al and Cu-Zn-Al-B martensite.« less

Surface and bulk effects of K in Cu 1-xK xIn 1-yGa ySe 2 solar cells

DOE PAGES

Muzzillo, Christopher P.; Anderson, Timothy J.

2017-12-29

Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu 1-xK xIn 1-yGa ySe 2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn 1-yGa ySe 2 absorbers with KIn 1-yGa ySe 2 grown on their surfaces. Distributing K throughout the bulk absorbers improved power conversion efficiency, open-circuit voltage (VOC) and fill factor (FF) for Ga/(Ga+In) of 0, 0.3 and 0.5. Surface KIn 1-yGa ySe 2 and bulk x ~ 0.07 Cu 1-xK xIn 1-yGa ySe 2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improvedmore » efficiency, VOC, and FF, relative to CuIn 1-yGa ySe 2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu 1-xK xInSe 2, the formation of Cu 1-xK xGaSe 2 alloys was favored at low temperatures and high Na supply by the substrate, relative to the formation of mixed-phase CuGaSe 2 + KGaSe 2. KIn 1-yGa ySe 2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn 1-yGa ySe 2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn 1-yGa ySe 2 passivates the surface of CuIn 1-yGa ySe 2 to increase efficiency, VOC, and FF, while bulk Cu 1-xK xIn 1-yGa ySe 2 absorbers with x ~ 0.07 enhance efficiency, VOC, and FF by some other mechanism.« less

Surface and bulk effects of K in Cu 1-xK xIn 1-yGa ySe 2 solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muzzillo, Christopher P.; Anderson, Timothy J.

Two strategies for enhancing photovoltaic (PV) performance in chalcopyrite solar cells were investigated: Cu 1-xK xIn 1-yGa ySe 2 absorbers with low K content (K/(K+Cu), or x ~ 0.07) distributed throughout the bulk, and CuIn 1-yGa ySe 2 absorbers with KIn 1-yGa ySe 2 grown on their surfaces. Distributing K throughout the bulk absorbers improved power conversion efficiency, open-circuit voltage (VOC) and fill factor (FF) for Ga/(Ga+In) of 0, 0.3 and 0.5. Surface KIn 1-yGa ySe 2 and bulk x ~ 0.07 Cu 1-xK xIn 1-yGa ySe 2 films with Ga/(Ga+In), or y of 0.3 and 0.5 also had improvedmore » efficiency, VOC, and FF, relative to CuIn 1-yGa ySe 2 baselines. On the other hand, y ~ 1 absorbers did not benefit from K introduction. Similar to Cu 1-xK xInSe 2, the formation of Cu 1-xK xGaSe 2 alloys was favored at low temperatures and high Na supply by the substrate, relative to the formation of mixed-phase CuGaSe 2 + KGaSe 2. KIn 1-yGa ySe 2 alloys were grown for the first time, as evidenced by X-ray diffraction and ultraviolet/visible spectroscopy. For all Ga/(Ga+In) compositions, the surface KIn 1-yGa ySe 2 absorbers had superior PV performance in buffered and buffer-free devices. However, the bulk x ~ 0.07 absorbers only outperformed the baselines in buffered devices. The data demonstrate that KIn 1-yGa ySe 2 passivates the surface of CuIn 1-yGa ySe 2 to increase efficiency, VOC, and FF, while bulk Cu 1-xK xIn 1-yGa ySe 2 absorbers with x ~ 0.07 enhance efficiency, VOC, and FF by some other mechanism.« less

Understanding the crystallization mechanism of delafossite CuGaO2 for controlled hydrothermal synthesis of nanoparticles and nanoplates.

PubMed

Yu, Mingzhe; Draskovic, Thomas I; Wu, Yiying

2014-06-02

The delafossite CuGaO2 is an important p-type transparent conducting oxide for both fundamental science and industrial applications. An emerging application is for p-type dye-sensitized solar cells. Obtaining delafossite CuGaO2 nanoparticles is challenging but desirable for efficient dye loading. In this work, the phase formation and crystal growth mechanism of delafossite CuGaO2 under low-temperature (<250 °C) hydrothermal conditions are systematically studied. The stabilization of Cu(I) cations in aqueous solution and the controlling of the hydrolysis of Ga(III) species are two crucial factors that determine the phase formation. The oriented attachment (OA) growth is proposed as the crystal growth mechanism to explain the formation of large CuGaO2 nanoplates. Importantly, by suppressing this OA process, delafossite CuGaO2 nanoparticles that are 20 nm in size were successfully synthesized for the first time. Moreover, considering the structural and chemical similarities between the Cu-based delafossite series compounds, the understanding of the hydrothermal chemistry and crystallization mechanism of CuGaO2 should also benefit syntheses of other similar delafossites such as CuAlO2 and CuScO2.

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

NASA Astrophysics Data System (ADS)

Reshchikov, M. A.; Foussekis, M.; McNamara, J. D.; Behrends, A.; Bakin, A.; Waag, A.

2012-04-01

The optical properties of high-quality GaN co-doped with silicon and zinc are investigated by using temperature-dependent continuous-wave and time-resolved photoluminescence measurements. The blue luminescence band is related to the ZnGa acceptor in GaN:Si,Zn, which exhibits an exceptionally high absolute internal quantum efficiency (IQE). An IQE above 90% was calculated for several samples having different concentrations of Zn. Accurate and reliable values of the IQE were obtained by using several approaches based on rate equations. The concentrations of the ZnGa acceptors and free electrons were also estimated from the photoluminescence measurements.

A Stable Plasmonic Cu@Cu2 O/ZnO Heterojunction for Enhanced Photocatalytic Hydrogen Generation.

PubMed

Lou, Yongbing; Zhang, Yake; Cheng, Lin; Chen, Jinxi; Zhao, Yixin

2018-05-09

The localized surface plasmon resonance (LSPR) effect has been widely utilized in photocatalysis, but most reported LSPR materials are based on noble metals of gold or silver with high chemical stability. Plasmonic copper nanoparticles that exhibit an LSPR absorbance at 600 nm are promising for many applications, such as photocatalysis. Unfortunately, plasmonic copper nanoparticles are affected by serious surface oxidation in air. Herein, a novel lollipop-shaped Cu@Cu 2 O/ZnO heterojunction nanostructure was designed, for the first time, to stabilize the plasmonic Cu core by decorating Cu@Cu 2 O core-shell structures with ZnO nanorods. This Cu@Cu 2 O/ZnO nanostructure exhibited significantly enhanced stability than that of regular Cu@Cu 2 O, which accounted for the remarkably enhanced photocatalytic H 2 evolution rate through water splitting, relative to pristine ZnO nanorods, over an extended wavelength range due to the plasmonic Cu core. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

The effects of starting materials in the synthesis of (Ga(1-x)Znx)(N(1-x)O(x)) solid solution on its photocatalytic activity for overall water splitting under visible light.

PubMed

Hisatomi, Takashi; Maeda, Kazuhiko; Lu, Daling; Domen, Kazunari

2009-01-01

The influence of starting materials on the physicochemical and photocatalytic properties of (Ga(1-x)Zn(x))(N(1-x)O(x)) were investigated in an attempt to optimize the preparation conditions. The catalyst was successfully prepared by nitriding a starting mixture of ZnO and Ga2O3. A mixture of metallic zinc and GaN, however, did not afford the desired compound. The crystallinity, surface area, composition, and absorption characteristics of the resultant (Ga(1-x)Zn(x))(N(1-x)O(x)) solid solution are found to be dependent on the morphology of ZnO but largely insensitive to the choice of Ga2O3 polymorph. The use of coarser-grained ZnO results in a coarser-grained catalyst with elevated zinc and oxygen content and reduced uniformity in composition and crystallinity. The results demonstrate the importance of selecting appropriate ZnO and Ga2O3 starting materials for maximizing the photocatalytic activity of (Ga(1-x)Zn(x))(N(1-x)O(x)) for overall water splitting under visible light.

The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

NASA Astrophysics Data System (ADS)

Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

2014-04-01

The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10-3 Ω cm for undoped ZnO to 2.05 × 10-3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

Mobility enhancement in crystalline In-Ga-Zn-oxide with In-rich compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsutsui, Kazuhiro; Matsubayashi, Daisuke; Ishihara, Noritaka

The electron mobility of In-Ga-Zn-oxide (IGZO) is known to be enhanced by higher In content. We theoretically investigated the mobility-enhancement mechanism by proposing an In-Ga-Zn-disorder scattering model for an In-rich crystalline IGZO (In{sub 1+x}Ga{sub 1−x}O{sub 3}(ZnO){sub m} (0 < x < 1, m > 0)) thin film. The obtained theoretical mobility was found to be in agreement with experimental Hall mobility for a crystalline In{sub 1.5}Ga{sub 0.5}O{sub 3}(ZnO) (or In{sub 3}GaZn{sub 2}O{sub 8}) thin film. The mechanism specific to In-rich crystalline IGZO thin films is based on three types of Coulomb scattering potentials that originate from effective valence differences. In this study, the In-Ga-Zn-disorder scattering modelmore » indicates that the effective valence of the In{sup 3+} ions in In-rich crystalline IGZO thin films significantly affects their electron mobility.« less

Improved sensitivity of polychlorinated-biphenyl-orientated porous-ZnO surface photovoltage sensors from chemisorption-formed ZnO-CuPc composites

PubMed Central

Li, Mingtao; Meng, Guowen; Huang, Qing; Zhang, Shile

2014-01-01

We report a new mechanism for the enhancement of porous-ZnO surface photovoltage (SPV) response to polychlorinated biphenyls (PCBs, a notorious class of persistent organic pollutants as global environmental hazard) based on copper phthalocyanine (CuPc) chemisorptive bonding on porous-ZnO. A new ZnO-CuPc composite is formed on the porous-ZnO surface due to the interaction between the surface ZnO and CuPc, with its valence band (VB) energy level being higher than that of the pristine porous-ZnO. So that the efficiency of the photogenerated-electron transfer from the composite VB to the adjacent ZnO's surface states is drastically increased due to the reduced energy gap between the transition states. As a result, the sensitivity of the PCB-orientated SPV sensor is much improved by showing amplified variation of the SPV-signals perturbed by PCBs adsorbed on the ZnO-CuPc@porous-ZnO sensitive material. PMID:24594662

A New Test of Copper and Zinc Abundances in Late-Type Stars Using Cu II and Zn II lines in the Near-Ultraviolet

NASA Astrophysics Data System (ADS)

Roederer, Ian

2017-08-01

The copper (Cu, Z = 29) and zinc (Zn, Z = 30) abundances found in late-type stars provide critical constraints on models that predict the yields of massive star supernovae, hypernovae, Type Ia supernovae, and AGB stars, which are essential ingredients in Galactic chemical evolution models. Furthermore, Zn is commonly used to compare the abundance of iron-group elements in the gas phase in high-redshift DLA systems with metallicities in Local Group stars. It is thus important that the observational Cu and Zn abundances in stars are correct. My proposed archive study will address this issue by using archive STIS spectra of 14 stars to provide the first systematic observational tests of non-LTE calculations of Cu and Zn line formation in late-type stars. The non-LTE calculations predict that all LTE [Cu/Fe] abundance ratios presently found in the literature are systematically lower than the true ratios found in stars. The non-LTE calculations for Zn predict that the LTE values in the literature may be systematically overestimated in low-metallicity stars. The LTE abundances of Cu and Zn are derived from Cu I and Zn I lines. The key advance enabled by the use of NUV spectra is the detection of several lines of Cu II and Zn II, which cannot be detected in the optical or infrared. Cu II and Zn II are largely immune to non-LTE effects in the atmospheres of late-type stars. The metallicities of the 14 stars with NUV spectra span -2.6 < [Fe/H] < -0.1, which covers the range of most Cu and Zn abundances reported in the literature. The proposed study will allow me to test the non-LTE calculations and calibrate the stellar abundances.

Peroxisomal copper, zinc superoxide dismutase. Characterization of the isoenzyme from watermelon cotyledons.

PubMed Central

Bueno, P; Varela, J; Gimeénez-Gallego, G; del Río, L A

1995-01-01

The biochemical and immunochemical characterization of a superoxide dismutase (SOD, EC 1.15.1.1) from peroxisomal origin has been carried out. The enzyme is a Cu,Zn-containing SOD (CuZn-SOD) located in the matrix of peroxisomes from watermelon (Citrullus vulgaris Schrad.) cotyledons (L.M. Sandalio and L.A. del Río [1988] Plant Physiol 88: 1215-1218). The amino acid composition of the enzyme was determined. Analysis by reversed-phase high-performance liquid chromatography of the peroxisomal CuZn-SOD incubated with 6 M guanidine-HCl indicated that this enzyme contained a noncovalently bound chromophore group that was responsible for the absorbance peak of the native enzyme at 260 nm. The amino acid sequence of the peroxisomal CuZn-SOD was determined by Edman degradation. Comparison of its sequence with those reported for other plant SODs revealed homologies of about 70% with cytosolic CuZn-SODs and of 90% with chloroplastic CuZn-SODs. The peroxisomal SOD has a high thermal stability and resistance to inactivation by hydrogen peroxide. A polyclonal antibody was raised against peroxisomal CuZn-SOD, and by western blotting the antibody cross-reacted with plant CuZn-SODs but did not recognize either plant Mn-SOD or bacterial Fe-SOD. The antiSOD-immunoglobulin G showed a weak cross-reaction with bovine erythrocytes and liver CuZn-SODs, and also with cell-free extracts from trout liver. The possible function of this CuZn-SOD in the oxidative metabolism of peroxisomes is discussed. PMID:7630940

Material Design of p-Type Transparent Amorphous Semiconductor, Cu-Sn-I.

PubMed

Jun, Taehwan; Kim, Junghwan; Sasase, Masato; Hosono, Hideo

2018-03-01

Transparent amorphous semiconductors (TAS) that can be fabricated at low temperature are key materials in the practical application of transparent flexible electronics. Although various n-type TAS materials with excellent performance, such as amorphous In-Ga-Zn-O (a-IGZO), are already known, no complementary p-type TAS has been realized to date. Here, a material design concept for p-type TAS materials is proposed utilizing the pseudo s-orbital nature of spatially spreading iodine 5p orbitals and amorphous Sn-containing CuI (a-CuSnI) thin film is reported as an example. The resulting a-CuSnI thin films fabricated by spin coating at low temperature (140 °C) have a smooth surface. The Hall mobility increases with the hole concentration and the largest mobility of ≈9 cm 2 V -1 s -1 is obtained, which is comparable with that of conventional n-type TAS. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of Li Addition to Zn-Al Alloys on Cu Substrate During Spreading Test and After Aging Treatment

NASA Astrophysics Data System (ADS)

Gancarz, Tomasz; Pstrus, Janusz; Cempura, Grzegorz; Berent, Katarzyna

2016-12-01

The spreading of Zn-Al eutectic-based alloys with 0.05 wt.%, 0.1 wt.%, and 0.2 wt.% Li on Cu substrate has been studied using the sessile drop method in presence of QJ201 flux. Wetting tests were performed after 1 min, 3 min, 8 min, 15 min, 30 min, and 60 min of contact at temperatures of 475°C, 500°C, 525°C, and 550°C. Samples after spreading at 500°C for 1 min were subjected to aging for 1 day, 10 days, and 30 days at temperature of 120°C, 170°C, and 250°C. The spreadability of eutectic Zn-5.3Al alloy with different Li contents on Cu substrate was determined in accordance with ISO 9455-10:2013-03. Selected solidified solder-substrate couples were, after spreading and aging tests, cross-sectioned and subjected to scanning electron microscopy, energy-dispersive spectroscopy (EDS), and x-ray diffraction (XRD) analysis of the interfacial microstructure. An experiment was designed to demonstrate the effect of Li addition on the kinetics of the formation and growth of CuZn, Cu5Zn8, and CuZn4 intermetallic compound (IMC) phases, during spreading and aging. The IMC layers formed at the interface were identified using XRD and EDS analyses. Increasing addition of Li to Zn-Al alloy caused a reduction in the thickness of the IMC layer at the interface during spreading, and an increase during aging. The activation energy was calculated, being found to increase for the Cu5Zn8 phase but decrease for the CuZn and CuZn4 phases with increasing Li content in the Zn-Al-Li alloys. The highest value of 142 kJ mol-1 was obtained for Zn-Al with 1.0 Li during spreading and 69.2 kJ mol-1 for Zn-Al with 0.05 Li during aging. Aging at 250°C caused an increase in only the Cu5Zn8 layer, which has the lowest Gibbs energy in the Cu-Zn system. This result is connected to the high diffusion of Cu from the substrate to the solder.

Effect of the transit through the gut of earthworm (Eisenia fetida) on fractionation of Cu and Zn in pig manure.

PubMed

Li, Lingxiangyu; Wu, Jianyang; Tian, Guangming; Xu, Zhenlan

2009-08-15

To investigate the effect of the transit through the gut of earthworm (Eisenia fetida) on the fractionation of Cu and Zn in pig manure, earthworms were reared with pig manure in the greenhouse. Both the pig manure and the earthworm casts were subjected to a five-step sequential extraction of Cu and Zn. The content of Cu bound to organic matter in pig manure increased from 60% to 75% after transit through the gut of earthworm, whereas that of Zn decreased from 50% to 25%. It demonstrated that Cu had a strong affinity towards organic matter. The share of Cu and Zn in the exchangeable fraction was reduced by the transit through the gut of earthworm. Based on these changes, Cu was more bioavailable, whereas Zn was less bioavailable. The factors affecting metal fractionation, like pH, organic matter (OM) and total phosphorous (TP) contents, and total metal concentration, were also affected significantly by the transit through the gut of earthworm. Stepwise multiple regression analysis revealed that the fractionation of Cu in the earthworm casts was influenced by OM, TP and the amount of Cu in the earthworm casts. The total Zn concentration in the earthworm casts was the primary factor that explained most of the variation in Zn fractionation. The present study demonstrated that the digestive activity in the gut of E. fetida played an important role in the fraction redistribution of Cu and Zn in pig manure.

Reduced anti-ferromagnetism promoted by Zn 3d 10 substitution at CuO 2 planar sites of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4O 12-δ superconductors

NASA Astrophysics Data System (ADS)

Mumtaz, M.; Khan, Nawazish A.

2009-11-01

The role of charge carriers in ZnO 2/CuO 2 planes of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4-yZn yO 12-δ material in bringing about superconductivity has been explained. Due to suppression of anti-ferromagnetic order with Zn 3d 10 ( S=0) substitution at Cu 3d 9(S={1}/{2}) sites in the inner CuO 2 planes of Cu 0.5Tl 0.5Ba 2Ca 3Cu 4O 12-δ superconductor, the distribution of charge carriers becomes homogeneous and optimum, which is evident from the enhanced superconductivity parameters. The decreased c-axis length with the increase of Zn doping improves interlayer coupling and hence the three dimensional (3D) conductivity in the unit cell is enhanced. Also the softening of phonon modes with the increased Zn doping indicates that the electron-phonon interaction has an essential role in the mechanism of high- Tc superconductivity in these compounds.

Source origin of trace elements in PM from regional background, urban and industrial sites of Spain

NASA Astrophysics Data System (ADS)

Querol, X.; Viana, M.; Alastuey, A.; Amato, F.; Moreno, T.; Castillo, S.; Pey, J.; de la Rosa, J.; Sánchez de la Campa, A.; Artíñano, B.; Salvador, P.; García Dos Santos, S.; Fernández-Patier, R.; Moreno-Grau, S.; Negral, L.; Minguillón, M. C.; Monfort, E.; Gil, J. I.; Inza, A.; Ortega, L. A.; Santamaría, J. M.; Zabalza, J.

Despite their significant role in source apportionment analysis, studies dedicated to the identification of tracer elements of emission sources of atmospheric particulate matter based on air quality data are relatively scarce. The studies describing tracer elements of specific sources currently available in the literature mostly focus on emissions from traffic or large-scale combustion processes (e.g. power plants), but not on specific industrial processes. Furthermore, marker elements are not usually determined at receptor sites, but during emission. In our study, trace element concentrations in PM 10 and PM 2.5 were determined at 33 monitoring stations in Spain throughout the period 1995-2006. Industrial emissions from different forms of metallurgy (steel, stainless steel, copper, zinc), ceramic and petrochemical industries were evaluated. Results obtained at sites with no significant industrial development allowed us to define usual concentration ranges for a number of trace elements in rural and urban background environments. At industrial and traffic hotspots, average trace metal concentrations were highest, exceeding rural background levels by even one order of magnitude in the cases of Cr, Mn, Cu, Zn, As, Sn, W, V, Ni, Cs and Pb. Steel production emissions were linked to high levels of Cr, Mn, Ni, Zn, Mo, Cd, Se and Sn (and probably Pb). Copper metallurgy areas showed high levels of As, Bi, Ga and Cu. Zinc metallurgy was characterised by high levels of Zn and Cd. Glazed ceramic production areas were linked to high levels of Zn, As, Se, Zr, Cs, Tl, Li, Co and Pb. High levels of Ni and V (in association) were tracers of petrochemical plants and/or fuel-oil combustion. At one site under the influence of heavy vessel traffic these elements could be considered tracers (although not exclusively) of shipping emissions. Levels of Zn-Ba and Cu-Sb were relatively high in urban areas when compared with industrialised regions due to tyre and brake abrasion, respectively.

Vapour phase techniques for deposition of CZTS thin films: A review

NASA Astrophysics Data System (ADS)

Kaur, Ramanpreet; Kumar, Sandeep; Singh, Sukhpal

2018-05-01

With the surge of thin film photovoltaic technologies in recent years, for cost reduction and increased production there is a need for earth abundant and non-toxic raw materials. Existing thin film solar cells comprising CuInS2 (CIS), CuInGaSe2 (CIGS) and CdTe contain elements that are rare in earth's crust and in case of CdTe toxic. Cu2ZnSnS4 (CZTS), having Kesterite structure, a direct band gap of 1.4 - 1.5 eV and an absorption coefficient of 104 cm-1 makes a promising candidate for absorber layer in thin film solar cells. So far many physical and chemical techniques have been employed for deposition of CZTS thin films. This review focuses on various vapour phase techniques used for fabrication of films, recent advances in these techniques and their future outlook.

Obtaining Large Columnar CdTe Grains and Long Lifetime on CdSe, MgZnO, or CdS Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amarasinghe, Mahisha; Colegrove, Eric M; Moseley, John

CdTe solar cells have reached efficiencies comparable to multicrystalline silicon and produce electricity at costs competitive with traditional energy sources. Recent efficiency gains have come partly from shifting from the traditional CdS window layer to new materials such as CdSe and MgZnO, yet substantial headroom still exists to improve performance. Thin film technologies including Cu(In,Ga)Se2, perovskites, Cu2ZnSn(S,Se)4, and CdTe inherently have many grain boundaries that can form recombination centers and impede carrier transport; however, grain boundary engineering has been difficult and not practical. In this work, it is demonstrated that wide columnar grains reaching through the entire CdTe layer canmore » be achieved by aggressive postdeposition CdTe recrystallization. This reduces the grain structure constraints imposed by nucleation on nanocrystalline window layers and enables diverse window layers to be selected for other properties critical for electro-optical applications. Computational simulations indicate that increasing grain size from 1 to 7 um can be equivalent to decreasing grain-boundary recombination velocity by three orders of magnitude. Here, large high-quality grains enable CdTe lifetimes exceeding 50 ns.« less

Synergies between Unsaturated Zn/Cu Doping Sites in Carbon Dots Provide New Pathways for Photocatalytic Oxidation

DOE PAGES

Wu, Wenting; Zhang, Qinggang; Wang, Ruiqin; ...

2017-12-07

Unsaturated metal species (UMS) confined in nanomaterials play important roles for electron transfer in a wide range of catalytic reactions. However, the limited fabrication methods of UMS restrict their wider catalytic applications. Here in this paper, we report on the synergy of unsaturated Zn and Cu dopants confined in carbon dots (ZnCu-CDs) to produce enhanced electron transfer and photooxidation processes in the doped CDs. The Zn/Cu species chelate with the carbon matrix mainly through Cu-O(N)-Zn-O(N)-Cu complexes. Within this structure, Cu 2+ acts as a mild oxidizer that facilely increases the unsaturated Zn content and also precisely tunes the unsaturated Znmore » valence state to Zn d+, where d is between 1 and 2, instead of Zn. With the help of UMS, electron-transfer pathways are produced, enhancing both the electron donating (7.0 times) and-accepting (5.3 times) abilities relative to conventional CDs. Because of these synergistic effects, the photocatalytic efficiency of CDs in photooxidation reactions is shown to improve more than 5-fold.« less

Potential effect of CuInS2/ZnS core-shell quantum dots on P3HT/PEDOT:PSS heterostructure based solar cell

NASA Astrophysics Data System (ADS)

Jindal, Shikha; Giripunje, S. M.

2018-07-01

Nanostructured quantum dots (QDs) are quite promising in the solar cell application due to quantum confinement effect. QDs possess multiple exciton generation and large surface area. The environment friendly CuInS2/ZnS core-shell QDs were prepared by solvothermal method. Thus, the 3 nm average sized CuInS2/ZnS QDs were employed in the bulk heterojunction device and the active blend layer consisting of the P3HT and CuInS2/ZnS QDs was investigated. The energy level information of CuInS2/ZnS QDs as an electron acceptor was explored by ultra violet photoelectron spectroscopy. Bulk heterojunction hybrid device of ITO/PEDOT:PSS/P3HT: (CuInS2/ZnS QDs)/ZnO/Ag was designed by spin coating approach and its electrical characterization was investigated by solar simulator. Current density - voltage characteristics shows the enhancement in power conversion efficiency with increasing concentration of CuInS2/ZnS QDs in bulk heterojunction device.

Comparison of Cu2+ and Zn2+ thermalcatalyst in treating diazo dye

NASA Astrophysics Data System (ADS)

Lau, Y. Y.; Wong, Y. S.; Ong, S. A.; Lutpi, N. A.; Ho, L. N.

2018-05-01

This research demonstrates the comparison between copper (II) sulphate (CuSO4) and zinc oxide (ZnO) as thermalcatalysts in thermolysis process for the treatment of diazo reactive black 5 (RB 5) wastewater. CuSO4 was found to be the most effective thermalcatalyst in comparison to ZnO. The color removal efficiency of RB 5 catalysed by CuSO4 and ZnO were 91.55 % at pH 9.5 and 7.36 % at pH 2, respectively. From the UV-Vis wavelength scan, CuSO4 catalyst is able to cleave the molecular structure bonding more efficiently compared to ZnO. ZnO which only show a slight decay on the main chemical network strands: azo bond, naphthalene and benzene rings whereas CuSO4 catalyst is able to fragment azo bond and naphthalene more effectively. The degradation reactions of CuSO4 and ZnO as thermalcatalysts in thermolysis process were compared.

Toxicity of nanoparticles of CuO, ZnO and TiO2 to microalgae Pseudokirchneriella subcapitata.

PubMed

Aruoja, Villem; Dubourguier, Henri-Charles; Kasemets, Kaja; Kahru, Anne

2009-02-01

Toxicities of ZnO, TiO2 and CuO nanoparticles to Pseudokirchneriella subcapitata were determined using OECD 201 algal growth inhibition test taking in account potential shading of light. The results showed that the shading effect by nanoparticles was negligible. ZnO nanoparticles were most toxic followed by nano CuO and nano TiO2. The toxicities of bulk and nano ZnO particles were both similar to that of ZnSO4 (72 h EC50 approximately 0.04 mg Zn/l). Thus, in this low concentration range the toxicity was attributed solely to solubilized Zn2+ ions. Bulk TiO2 (EC50=35.9 mg Ti/l) and bulk CuO (EC50=11.55 mg Cu/l) were less toxic than their nano formulations (EC50=5.83 mg Ti/l and 0.71 mg Cu/l). NOEC (no-observed-effect-concentrations) that may be used for risk assessment purposes for bulk and nano ZnO did not differ (approximately 0.02 mg Zn/l). NOEC for nano CuO was 0.42 mg Cu/l and for bulk CuO 8.03 mg Cu/l. For nano TiO2 the NOEC was 0.98 mg Ti/l and for bulk TiO2 10.1 mg Ti/l. Nano TiO2 formed characteristic aggregates entrapping algal cells that may contribute to the toxic effect of nano TiO2 to algae. At 72 h EC50 values of nano CuO and CuO, 25% of copper from nano CuO was bioavailable and only 0.18% of copper from bulk CuO. Thus, according to recombinant bacterial and yeast Cu-sensors, copper from nano CuO was 141-fold more bioavailable than from bulk CuO. Also, toxic effects of Cu oxides to algae were due to bioavailable copper ions. To our knowledge, this is one of the first systematic studies on effects of metal oxide nanoparticles on algal growth and the first describing toxic effects of nano CuO towards algae.

Fabrication of GaN doped ZnO nanocrystallines by laser ablation.

PubMed

Gopalakrishnan, N; Shin, B C; Bhuvana, K P; Elanchezhiyan, J; Balasubramanian, T

2008-08-01

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nm and it is 41 nm while doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires

DTIC Science & Technology

2008-11-01

Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires Lena Mazeina,* Yoosuf N. Picard, and Sharka M. Prokes Electronics...Manuscript ReceiVed NoVember 6, 2008 ABSTRACT: Novel hierarchical ZnO- Ga2O3 nanostructures were fabricated via a two stage growth process. Nanowires of Ga2O3 ...nanobrushes (NBs) with Ga2O3 as the core and ZnO as the branches self-assembling symmetrically in six equiangular directions around the core

Geochemical features of sulfides from the Deyin-1 hydrothermal field at the southern Mid-Atlantic Ridge near 15°S

NASA Astrophysics Data System (ADS)

Wang, Shujie; Li, Huaiming; Zhai, Shikui; Yu, Zenghui; Cai, Zongwei

2017-12-01

In this study, geochemical compositions of elements in sulfide samples collected from the Deyin-1 hydrothermal field near the 15°S southern Mid-Atlantic Ridge (SMAR) were analyzed by the X-ray fluorescence spectrometry (XRF) and inductively coupled plasma mass spectrometry (ICP-MS) to examine the enrichment regulations of ore-forming elements and hydrothermal mineralization. These sulfide precipitates can be classified macroscopically into three types: Fe-rich sulfide, Fe-Cu-rich sulfide and Fe-Zn-rich sulfide, and are characterized by the enrichment of base metal elements along with a sequence of Fe>Zn>Cu. Compared with sulfides from other hydrothermal fields on MAR, Zn concentrations of sulfides in the research area are significantly high, while Cu concentrations are relatively low. For all major, trace or rare-earth elements (REE), their concentrations and related characteristic parameters exhibit significant variations (up to one or two orders of magnitude), which indicates the sulfides from different hydrothermal vents or even a same station were formed at different stages of hydrothermal mineralization, and suggests the variations of chemical compositions of the hydrothermal fluid with respect to time. The hydrothermal temperatures of sulfides precipitation decreased gradually from station TVG10 (st.TVG10) to st.TVG12, and to st.TVG11, indicating that the precipitation of hydrothermal sulfides is subjected to conditions changed from high temperature to low temperature, and that the hydrothermal activity of study area was at the late stage of a general trend of evolution from strong to weak. The abnormally low concentrations of REE in sulfides and their similar chondrite-normalized REE patterns show that REEs in all sulfides were derived from a same source, but underwent different processes of migration or enrichment, or sulfides were formed at different stages of hydrothermal mineralization. The sulfides collected from the active hydrothermal vent were mainly attributed to precipitating directly from the hydrothermal fluid, while those collected from the extinct hydrothermal chimney might have already been altered by the seawater. Generally, ore-forming elements in the sulfides can be divided into three groups: Fe-based element group, Cu-based element group and Zn-based element group. The first group includes Fe, Mn, Cr, Mo, Sn, Rb and bio-enriching elements, such as P and Si, reflecting the similar characteristics to Fe in the study area. And the second group contains Cu, W, Co, Se, Te and Bi, suggesting the similar behavior with Cu. Moreover, the third group includes Zn, Hf, Hg, Cd, Ta, Ga, Pb, As, Ag, Ni and Sb, which indicates the geochemical characteristics of most dispersed trace elements controlled by Zn-bearing minerals to some extent.

Fe{sub 3}O{sub 4}/CuO/ZnO/Nano graphene platelets (Fe{sub 3}O{sub 4}/CuO/ZnO/NGP) composites prepared by sol-gel method with enhanced sonocatalytic activity for the removal of dye

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hendry, Tju; Taufik, Ardiansyah; Saleh, Rosari, E-mail: rosari.saleh@gmail.com, E-mail: rosari.saleh@ui.ac.id

2016-04-19

In this study, an attempt has been made to synthesize nanographene platelets coupled with Fe3O4/CuO/ZnO (Fe3O4/CuO/ZnO/NGP) with various ZnO loadings using a two step methods, sol-gel followed by hydrothermal method. Characterization was carried out by X-ray diffraction, energy-dispersive X-ray spectroscopy and vibrating sample magnetometer. The sonocatalytic performance was evaluated by degradation of methylene blue under ultrasonic irradiation.The Fe3O4/CuO/ZnO/NGP showed superior sonocatalytic activity than the Fe3O4/CuO/ZnO materials. They also showed high stability and can be easily separated from the reaction system for recycling process.

Electronic absorption band broadening and surface roughening of phthalocyanine double layers by saturated solvent vapor treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jinhyun; Yim, Sanggyu, E-mail: sgyim@kookmin.ac.kr

2012-10-15

Variations in the electronic absorption (EA) and surface morphology of three types of phthalocyanine (Pc) thin film systems, i.e. copper phthalocyanine (CuPc) single layer, zinc phthalocyanine (ZnPc) single layer, and ZnPc on CuPc (CuPc/ZnPc) double layer film, treated with saturated acetone vapor were investigated. For the treated CuPc single layer film, the surface roughness slightly increased and bundles of nanorods were formed, while the EA varied little. In contrast, for the ZnPc single layer film, the relatively high solubility of ZnPc led to a considerable shift in the absorption bands as well as a large increase in the surface roughnessmore » and formation of long and wide nano-beams, indicating a part of the ZnPc molecules dissolved in acetone, which altered their molecular stacking. For the CuPc/ZnPc film, the saturated acetone vapor treatment resulted in morphological changes in mainly the upper ZnPc layer due to the significantly low solubility of the underlying CuPc layer. The treatment also broadened the EA band, which involved a combination of unchanged CuPc and changed ZnPc absorption.« less

Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism

NASA Astrophysics Data System (ADS)

Sky, T. N.; Johansen, K. M.; Riise, H. N.; Svensson, B. G.; Vines, L.

2018-02-01

Isochronal and isothermal diffusion experiments of gallium (Ga) in zinc oxide (ZnO) have been performed in the temperature range of 900-1050 °C. The samples used consisted of a sputter-deposited and highly Ga-doped ZnO film at the surface of a single-crystal bulk material. We use a novel reaction diffusion (RD) approach to demonstrate that the diffusion behavior of Ga in ZnO is consistent with zinc vacancy (VZn) mediation via the formation and dissociation of GaZnVZn complexes. In the RD modeling, experimental diffusion data are fitted utilizing recent density-functional-theory estimates of the VZn formation energy and the binding energy of GaZnVZn. From the RD modeling, a migration energy of 2.3 eV is deduced for GaZnVZn, and a total/effective activation energy of 3.0 eV is obtained for the Ga diffusion. Furthermore, and for comparison, employing the so-called Fair model, a total/effective activation energy of 2.7 eV is obtained for the Ga diffusion, reasonably close to the total value extracted from the RD-modeling.

Copper, zinc, gallium and germanium distributions in taenite lamellae of iron meteorites and their importance for cooling rate estimations

NASA Astrophysics Data System (ADS)

Braun-Dullaeus, Karl-Ulrich; Traxel, Kurt

1995-02-01

One method forestimating cooling rates of meteorite parent bodies is to model measured nickel distributions in taenite lamellae of iron meteorites. Goldstein and Ogilvie ( Geochim. Cosmochim. Acta29, 893, 1965) and Rasmussen ( Icarus45, 564, 1981) developed techniques based on this idea to examine the cooling history in the temperature range between ˜700 and ˜400°C. As a result of Instrumental Neutron Activation Analysis (INAA) Rasmussen et al. ( Meteoritics23, 105, 1988) postulated that some trace elements would also be good cooling rate indicators. They argued that elements with distinct diffusion behavior are sensitive to different temperature ranges. The new Heidelberg proton microprobe uses the method of Proton Induced X-ray Emission (PIXE) for elemental analysis. This microprobe is an appropriate instrument to measure distributions of trace elements with a spatial resolution of 2 μm. We demonstrated on the iron meteorites Cape York (Agpalilik), Toluca and Odessa that the elements copper, zinc, gallium and germanium imitate the profiles of nickel in taenite lamella. The interpretation of the Zn, Ga and Ge profiles leads to the conclusion that these elements undergo diffusion mechanisms comparable to those of Ni. The numerical simulation of Cu distributions with a simplified model points out that little new information can be obtained about the cooling history of the meteorites by modelling Cu profiles. To simulate Zn, Ga or Ge distributions, the use of ternary phase diagrams is necessary.

In Situ Subcellular Imaging of Copper and Zinc in Contaminated Oysters Revealed by Nanoscale Secondary Ion Mass Spectrometry.

PubMed

Weng, Nanyan; Jiang, Haibo; Wang, Wen-Xiong

2017-12-19

Determining the in situ localization of trace elements at high lateral resolution levels in the biological system is very challenging, but critical for our understanding of metal sequestration and detoxification. Here, the cellular and subcellular distributions of Cu and Zn in contaminated oysters of Crassostrea hongkongensis were for the first time mapped using nanoscale secondary ion mass spectrometry (nanoSIMS). Three types of metal-containing cells were revealed in the gill and mantle of oysters, including Cu-specific hemocytes, Cu and Zn-containing granular hemocytes, and Cu and Zn-containing calcium cells. Obvious intercellular distribution of Cu was found in the gill tissue, indicating the potential role of hemolymph in the transportation of Cu in oysters. The distribution of Cu showed a strong colocalization with sulfur and nitrogen in Cu-specific hemocyte and intercellular hemolymph. In the Cu and Zn-containing granular hemocytes and calcium cells, the co-occurrence of Cu and Zn with phosphorus and calcium was also found. Different relationships of distributions between Cu/Zn and macronutrient elements (nitrogen, sulfur and phosphorus) implied the differential metal complexation in oysters. Interestingly, quantitative analysis of the ratios of 32 S - / 12 C 14 N - and 31 P - / 12 C 14 N - of metal-deposited sites suggested the dynamic process of transfer of Cu and Zn from the metabolized protein pool to a more thermodynamically stable and detoxified form.

Facile synthesis and photocatalytic activity of bi-phase dispersible Cu-ZnO hybrid nanoparticles

NASA Astrophysics Data System (ADS)

Liu, Xiao; Liu, HongLing; Zhang, WenXing; Li, XueMei; Fang, Ning; Wang, XianHong; Wu, JunHua

2015-04-01

Bi-phase dispersible Cu-ZnO hybrid nanoparticles were synthesized by one-pot non-aqueous nanoemulsion with the use of poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) (PEO-PPO-PEO) as the surfactant. The transmission electron microscopy (TEM) and X-ray diffraction (XRD) show high crystallinity of the Cu-ZnO hybrid nanoparticles and an average particle size of ~19.4 nm. The ultraviolet-visible light absorbance spectrometry (UV-vis) and photoluminescence spectrophotometry (PL) demonstrate well dispersibility and excellent optical performance of Cu-ZnO hybrid nanoparticles both in organic and aqueous solvent. The X-ray photoelectron spectroscopy (XPS) confirms Cu1+ and Cu2+ in ZnO. The observation using Sudan red (III) as probe molecule reveals that the Cu-ZnO hybrid nanoparticles possess enhanced photocatalytic activity and stability which are promising for potential applications in photocatalysis.

Solar Absorber Cu 2 ZnSnS 4 and its Parent Multilayers ZnS/SnS 2 /Cu 2 S Synthesized by Atomic Layer Deposition and Analyzed by X-ray Photoelectron Spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baryshev, Sergey V.; Riha, Shannon C.; Zinovev, Alexander V.

2015-06-01

Presented here are results of x-ray photoelectron spectroscopy (XPS) on multilayers of metal-sulfide binaries ZnS, SnS2, and Cu2S grown by atomic layer deposition (ALD) on Si substrates, and of Cu2ZnSnS4 (CZTS) formed upon 450 °C annealing of the parent multilayer ZnS/SnS2/Cu2S. Survey and detailed spectral analysis of the multilayer ZnS/SnS2/Cu2S are presented step-wise, as each layer was sequentially added by ALD. The set of data is finalized with spectra of the resulting alloy CZTS. XPS analyses indicate significant mixing between SnS2 and Cu2S, which favors CZTS formation within the ALD approach.

Chemical Synthesis of ZnS:Cu Nanosheets

NASA Astrophysics Data System (ADS)

Bodo, Bhaskarjyoti; Kalita, P. K.

2010-10-01

ZnS thin films are synthesized through chemical bath deposition (CBD) technique from aqueous solution of ZnSO4 and thiourea mixing in equal volume and equimolar ratio. A 1% CuSO4 solution is mixed with the ZnSO4 solution for doping before the final chemical reaction. SEM image shows the formation of mainly nanosheets, teeth and comb like structures. Absorption studies show red shift of enhanced band gap on Cu doping. Photoluminescence of ZnS:Cu reveals the enhancement of blue luminescence at 468 nm and low intensity green emission at 493 nm which is attributed to more Cu2+ lying in the interstices. XRD shows that the prepared ZnS nanophosphors possess cubic zinc blende structures.

Zn-dopant dependent defect evolution in GaN nanowires

NASA Astrophysics Data System (ADS)

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-01

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires. Electronic supplementary information (ESI) available: HRTEM image of undoped GaN nanowires and first-principles calculations of Zn doped WZ-GaN. See DOI: 10.1039/c5nr04771d

Syntheses, structures, and properties of imidazolate-bridged Cu(II)-Cu(II) and Cu(II)-Zn(II) dinuclear complexes of a single macrocyclic ligand with two hydroxyethyl pendants.

PubMed

Li, Dongfeng; Li, Shuan; Yang, Dexi; Yu, Jiuhong; Huang, Jin; Li, Yizhi; Tang, Wenxia

2003-09-22

The imidazolate-bridged homodinuclear Cu(II)-Cu(II) complex, [(CuimCu)L]ClO(4).0.5H(2)O (1), and heterodinuclear Cu(II)-Zn(II) complex, [(CuimZnL(-)(2H))(CuimZnL(-)(H))](ClO(4))(3) (2), of a single macrocyclic ligand with two hydroxyethyl pendants, L (L = 3,6,9,16,19,22-hexaaza-6,19-bis(2-hydroxyethyl)tricyclo[22,2,2,2(11,14)]triaconta-1,11,13,24,27,29-hexaene), have been synthesized as possible models for copper-zinc superoxide dismutase (Cu(2),Zn(2)-SOD). Their crystal structures analyzed by X-ray diffraction methods have shown that the structures of the two complexes are markedly different. Complex 1 crystallizes in the orthorhombic system, containing an imidazolate-bridged dicopper(II) [Cu-im-Cu](3+) core, in which the two copper(II) ions are pentacoordinated by virtue of an N4O environment with a Cu.Cu distance of 5.999(2) A, adopting the geometry of distorted trigonal bipyramid and tetragonal pyramid, respectively. Complex 2 crystallizes in the triclinic system, containing two similar Cu-im-Zn cores in the asymmetric unit, in which both the Cu(II) and Zn(II) ions are pentacoordinated in a distorted trigonal bipyramid geometry, with the Cu.Zn distance of 5.950(1)/5.939(1) A, respectively. Interestingly, the macrocyclic ligand with two arms possesses a chairlike (anti) conformation in complex 1, but a boatlike (syn) conformation in complex 2. Magnetic measurements and ESR spectroscopy of complex 1 have revealed the presence of an antiferromagnetic exchange interaction between the two Cu(II) ions. The ESR spectrum of the Cu(II)-Zn(II) heterodinuclear complex 2 displayed a typical signal for mononuclear trigonal bipyramidal Cu(II) complexes. From pH-dependent ESR and electronic spectroscopic studies, the imidazolate bridges in the two complexes have been found to be stable over broad pH ranges. The cyclic voltammograms of the two complexes have been investigated. Both of the two complexes can catalyze the dismutation of superoxide and show rather high activity.

High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering

NASA Astrophysics Data System (ADS)

Maurya, Sandeep Kumar; Liu, Ya; Xu, Xiaojie; Woods-Robinson, Rachel; Das, Chandan; Ager, Joel W., III; Balasubramaniam, K. R.

2017-12-01

p-type transparent conducting Cu alloyed ZnS thin films from Cu{x} Zn{1-x} S targets (x = 0.1 , 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. x-ray diffraction and TEM-SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu2S phase. Conductivity values  ⩾400 S cm-1 were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S cm-1 obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be  ⩾75% at 550 nm. The transparent conductor figure of merit (ΦTC ) of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was  ≈276 μS .

Codoping characteristics of Zn with Mg in GaN

NASA Astrophysics Data System (ADS)

Kim, K. S.; Han, M. S.; Yang, G. M.; Youn, C. J.; Lee, H. J.; Cho, H. K.; Lee, J. Y.

2000-08-01

The doping characteristics of Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg-Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5×1017cm-3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg-Zn codoped GaN film is 5.0×10-4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10-3 Ω cm2).

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

PubMed

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

Influence of Cu Addition on the Structure, Mechanical and Corrosion Properties of Cast Mg-2%Zn Alloy

NASA Astrophysics Data System (ADS)

Lotfpour, M.; Emamy, M.; Dehghanian, C.; Tavighi, K.

2017-05-01

Effects of different concentrations of Cu on the structure, mechanical and corrosion properties of Mg-2%Zn alloy were studied by the use of x-ray diffraction, optical microscopy, scanning electron microscopy, energy dispersive spectroscopy, standard tensile testing, polarization and electrochemical impedance spectroscopy (EIS) measurements. The average grain size of the alloy decreased from above 1000 μm to about 200 μm with 5 wt.% Cu addition in as-cast condition. Microstructural studies revealed that Mg-2Zn- xCu alloys matrix typically consists of primary α-Mg and MgZnCu and Mg(Zn,Cu)2 intermetallics which are mainly found at the grain boundaries. The results obtained from mechanical testing ascertained that Cu addition increased the hardness values significantly. Although the addition of 0.5 wt.% Cu improved the ultimate tensile strength and elongation values, more Cu addition (i.e., 5 wt.%) weakened the tensile properties of the alloy by introducing semi-continuous network of brittle intermetallic phases. Based on polarization test results, it can be concluded that Cu eliminates a protective film on Mg-2%Zn alloy surface. Among Mg-2%Zn- x%Cu alloys, the one containing 0.1 wt.% Cu exhibited the best anti-corrosion property. However, further Cu addition increased the volume fraction of intermetallics culminating in corrosion rate enhancement due to the galvanic couple effect. EIS and microstructural analysis also confirmed the polarization results.

Green synthesis of CuInS2/ZnS core-shell quantum dots by facile solvothermal route with enhanced optical properties

NASA Astrophysics Data System (ADS)

Jindal, Shikha; Giripunje, Sushama M.; Kondawar, Subhash B.; Koinkar, Pankaj

2018-03-01

We report an eco-friendly green synthesis of highly luminescent CuInS2/ZnS core-shell quantum dots (QDs) with average particle size ∼ 3.9 nm via solvothermal process. The present study embodies the intensification of CuInS2/ZnS QDs properties by the shell growth on the CuInS2 QDs. The as-prepared CuInS2 core and CuInS2/ZnS core-shell QDs have been characterized using a range of optical and structural techniques. By adopting a low temperature growth of CuInS2 core and high temperature growth of CuInS2/ZnS core-shell growth, the tuning of absorption and photoluminescence emission spectra were observed. Optical absorption and photoluminescence spectroscopy probe the effect of ZnS passivation on the electronic structure of the CuInS2 dots. In addition, QDs have been scrutinized using ultra violet photoelectron spectroscopy (UPS) to explore their electronic band structure. The band level positions of CuInS2 and CuInS2/ZnS QDs suffices the demand of non-toxic acceptor material for electronic devices. The variation in electronic energy levels of CuInS2 core with the coating of wide band gap ZnS shell influence the removal of trap assisted recombination on the surface of the core. QDs exhibited tunable emission from red to orange region. These studies reveal the feasibility of QDs in photovoltaic and light emitting diodes.

Effects of Zn²⁺ and Cu²⁺ on loach ovaries and ova development.

PubMed

Tang, Jian-Xun; Li, Jun-Rong; Liu, Zhong-Liang; Zhao, Hua; Tao, Xiao-Min; Cheng, Zhang-Shun

2013-10-01

This study compared the accumulation of Zn²⁺ and Cu²⁺ in the ovaries and ova of loaches under different concentrations of Zn²⁺ (1.00, 2.50 and 5.00 mg/L respectively) and Cu²⁺ (0.10, 0.25 and 0.50 mg/L respectively). The results showed that both Zn²⁺ and Cu²⁺ accumulated in the ovaries, and that the relationship between accumulation and time was linear over 20 days of exposure. The accumulation of the metals in ovaries was closely related to the concentration of exposure in the solutions (P<0.05), and was obviously affected by the time and doses. However, the Cu²⁺ concentration was significantly higher than Zn²⁺ (P<0.05). The development level of ova in the ovaries also correlated with the concentration and exposure period in the Zn²⁺ and Cu²⁺ solutions. This study compared the accumulation of Zn 2+ and Cu 2+ in the ovaries and ova of loaches under different concentrations of Zn 2+ (1.00, 2.50 and 5.00 mg/L respectively) and Cu 2+ (0.10, 0.25 and 0.50 mg/L respectively). The results showed that both Zn 2+ and Cu 2+ accumulated in the ovaries, and that the relationship between accumulation and time was linear over 20 days of exposure. The accumulation of the metals in ovaries was closely related to the concentration of exposure in the solutions ( P< 0.05), and was obviously affected by the time and doses. However, the Cu 2+ concentration was significantly higher than Zn 2+ ( P< 0.05). The development level of ova in the ovaries also correlated with the concentration and exposure period in the Zn 2+ and Cu 2+ solutions.

Synthesis of Cu{sub 2}ZnSnS{sub 4} nanoparticles and controlling the morphology with polyethylene glycol

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rawat, Kusum; Department of Electronic Science, University of Delhi South Campus, Delhi 110021; Kim, Hee-Joon

Highlights: • Cu{sub 2}ZnSnS{sub 4} nanoparticles were synthesized by wet chemical technique. • First report on the effect of using polyethylene glycol as a structure directing agent on Cu{sub 2}ZnSnS{sub 4} nanoparticles. • The morphology of Cu{sub 2}ZnSnS{sub 4} nanoparticles changes into nanoflakes and nanorods structures with polyethylene glycol concentration. • Polyethylene glycol assisted Cu{sub 2}ZnSnS{sub 4} nanoparticle film exhibits optical bandgap of 1.5 eV which is suitable for the application in solar cells. - Abstract: Cu{sub 2}ZnSnS{sub 4} nanoparticles were synthesized by wet chemical technique using metal thiourea precursor at 250 °C. The structural and morphological properties of asmore » grown nanoparticles have been characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and transmission electron microscopy. The influence of different concentration of polyethylene glycol as structure directing agent on the morphologies of Cu{sub 2}ZnSnS{sub 4} nanoparticles are investigated on thin films deposited by spin coating technique. The mean crystallite size of the Cu{sub 2}ZnSnS{sub 4} nanoparticles was found to improve with polyethylene glycol concentration. Scanning electron microscopy images of Cu{sub 2}ZnSnS{sub 4} revealed aggregated spherical shaped nanoparticles whereas the polyethylene glycol assisted Cu{sub 2}ZnSnS{sub 4} nanoparticle films show nanoflakes and nanorods structures with increasing concentration of polyethylene glycol. Transmission electron microscopy analysis has also been performed to determine the size and structure of nanorods. UV–vis absorption spectroscopy shows the broad band absorption with optical bandgap of 1.50 eV for polyethylene glycol assisted Cu{sub 2}ZnSnS{sub 4} films.« less

In vivo-folded metal-metallothionein 3 complexes reveal the Cu-thionein rather than Zn-thionein character of this brain-specific mammalian metallothionein.

PubMed

Artells, Ester; Palacios, Oscar; Capdevila, Mercè; Atrian, Sílvia

2014-03-01

Metallothionein-3 (MT3) is one of the four mammalian metallothioneins (MT), and is constitutively synthesized in the brain. MT3 acts both intracellularly and extracellularly in this organ, performing functions related to neuronal growth and physiological metal (Zn and Cu) handling. It appears to be involved in the prevention of neurodegenerative disorders caused by insoluble Cu-peptide aggregates, as it triggers a Zn-Cu swap that may counteract the deleterious presence of copper in neural tissues. The literature data on MT3 coordination come from studies either on apo-MT3 reconstitution or the reaction of Zn-MT3 with Cu(2+) , an ion that is hardly present inside cells. To ascertain the MT3 metal-binding features in a scenario closer to the reductive cell cytoplasm, a study of the recombinant Zn(2+) , Cd(2+) and Cu(+) complexes of MT3, βMT3, and αMT3, as well as the in vitro Zn(2+) -Cd(2+) and Zn(2+) -Cu(+) replacement processes, is presented here. We conclude that MT3 has a Cu-thionein character that is stronger than that of the MT1 and MT2 isoforms - also present in the mammalian brain - which is mainly contributed by its β domain. In contrast, the α domain retains a high capacity to bind Zn(2+) ions, and, consequently, the entire MT3 peptide shows a peculiar dual ability to handle both metal ions. The nature of the formed Cu(+) -MT3 complexes oscillates from heterometallic Cu6 Zn4 -MT3 to homometallic Cu10 -MT3 major species, in a narrow Cu concentration range. Therefore, the entire MT3 peptide shows a high capacity to bind Cu(+) , provided that this occurs in a nonoxidative milieux. This reflects a peculiar property of this MT isoform, which accurately senses different Cu contents in the environment in which it is synthesized. © 2014 FEBS.

A full-spectrum photocatalyst with strong near-infrared photoactivity derived from synergy of nano-heterostructured Er3+-doped multi-phase oxides.

PubMed

Chen, Huabin; Liu, Wenxia; Hu, Bin; Qin, Zhuozhuo; Liu, Hong

2017-12-07

The development of full-spectrum photocatalysts active in the near-infrared (NIR) region has gained increasing attention in the photodegradation of organic pollutants. Herein, we designed a full-spectrum photocatalyst with strong NIR photoactivity based on the synergy of Er 3+ -doped ZnO-CuO-ZnAl 2 O 4 multi-phase oxides (Er 3+ -doped Zn/Cu/Al-MPO) via the formation of n-p-n double heterojunctions. The photocatalyst was prepared by synthesizing nanosheets of a Zn/Cu/Al/Er hydrotalcite-like compound (Zn/Cu/Al/Er-HLC) with a co-precipitation method followed by calcination of the nanosheets at 800 °C. The as-prepared Er 3+ -doped Zn/Cu/Al-MPO inherits the nanosheet morphology of Zn/Cu/Al/Er-HLC, and displays over-doubled photoactivity in the entire ultraviolet (UV), visible and NIR regions compared to undoped Zn/Cu/Al-MPO. The excellent photocatalytic activity of Er 3+ -doped Zn/Cu/Al-MPO, especially its strong NIR photoactivity, is ascribed to its Er 3+ -doped CuO-involved multi-crystalline phase heterostructure, i.e., n-p-n double heterojunctions, which does not only offer an enhanced NIR absorption but also promotes the separation of photogenerated charge carriers. Importantly, the synergy of all the parts of the n-p-n double heterojuctions plays an important role in interface band structure regulation for the enhancement of the photocatalytic properties of Er 3+ -doped Zn/Cu/Al-MPO. This work has demonstrated the feasibility of utilizing hydrotalcite-like precursors in the design of full-spectrum photocatalysts active in the NIR region.

Zinc and copper behaviour at the soil-river interface: New insights by Zn and Cu isotopes in the organic-rich Rio Negro basin

NASA Astrophysics Data System (ADS)

Guinoiseau, Damien; Gélabert, Alexandre; Allard, Thierry; Louvat, Pascale; Moreira-Turcq, Patricia; Benedetti, Marc F.

2017-09-01

The complex behaviour of Zn and Cu at the soil-river interface was investigated in soil and riverine water samples from the Rio Negro basin, a secondary tributary of the Rio Amazonas, using their stable isotope compositions. This acidic and organic river drains two types of intensely weathered terrains: podzols in its upstream part, and lateritic soils downstream. Bulk soil particles, suspended particulate matter (SPM) as well as colloidal fractions were sampled across the whole basin during low and high water stages. In the basin, Zn and Cu are mostly exported from lateritic soils and transported by organic colloids where significant losses are observed in the downstream part of the river. The use of δ66Zn and δ65Cu measurements reveals distinct stories for these two metals in suspended sediments and colloids. In the colloids, the constant δ66Zncoll across the basin is induced by the same weak association mode between Zn and organic ligands, regardless of the origin of the water. By contrast, in SPM, the speciation of Zn and thus δ66ZnSPM differ according to the type of drained soils. Zn is associated with organic complexes in particles exported with water draining podzol whereas Zn2+ is incorporated in the structure of the remaining kaolinite clays in lateritic output. The stronger reactivity of Cu than Zn with organic ligands induces its complete complexation. Copper is controlled by refractory particulate organic matter (POM) and by reactive colloidal organic matter; the latter being enriched in 65Cu due to stronger binding interactions than in POM. While the Cu content remains constant in the upstream part of the Rio Negro, downstream, the decrease of SPM and colloidal Cu fluxes is associated with a constant δ65CuSPM and with an increase of δ65Cucoll at the Rio Negro outlet. Geochemical mass balance modelling, based on SPM, Cu and Zn fluxes in SPM and their associated isotopic signatures, confirms distinct host phases for Zn and Cu, and identifies the most probable places where losses of these two metals occur. In colloids, the observed Cu isotope fractionation (from 0.24 to 0.45‰) superimposed on the significant Cucoll loss is assumed to result from a new isotopic equilibrium in a low velocity and high productivity zone: Cu-rich colloids enriched in 63Cu aggregate and settle down, whereas the remaining heavy Cu is partially complexed on strong organic ligands secreted by phytoplankton, forming new Cu-colloids.

Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2

PubMed Central

Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C.; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J.; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J.

2017-01-01

Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu2ZnSnS4) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source. PMID:28233864

Deliberate and Accidental Gas-Phase Alkali Doping of Chalcogenide Semiconductors: Cu(In,Ga)Se2.

PubMed

Colombara, Diego; Berner, Ulrich; Ciccioli, Andrea; Malaquias, João C; Bertram, Tobias; Crossay, Alexandre; Schöneich, Michael; Meadows, Helene J; Regesch, David; Delsante, Simona; Gigli, Guido; Valle, Nathalie; Guillot, Jérome; El Adib, Brahime; Grysan, Patrick; Dale, Phillip J

2017-02-24

Alkali metal doping is essential to achieve highly efficient energy conversion in Cu(In,Ga)Se 2 (CIGSe) solar cells. Doping is normally achieved through solid state reactions, but recent observations of gas-phase alkali transport in the kesterite sulfide (Cu 2 ZnSnS 4 ) system (re)open the way to a novel gas-phase doping strategy. However, the current understanding of gas-phase alkali transport is very limited. This work (i) shows that CIGSe device efficiency can be improved from 2% to 8% by gas-phase sodium incorporation alone, (ii) identifies the most likely routes for gas-phase alkali transport based on mass spectrometric studies, (iii) provides thermochemical computations to rationalize the observations and (iv) critically discusses the subject literature with the aim to better understand the chemical basis of the phenomenon. These results suggest that accidental alkali metal doping occurs all the time, that a controlled vapor pressure of alkali metal could be applied during growth to dope the semiconductor, and that it may have to be accounted for during the currently used solid state doping routes. It is concluded that alkali gas-phase transport occurs through a plurality of routes and cannot be attributed to one single source.

Cu0-loaded SBA-15@ZnO with improved electrical properties and affinity towards hydrogen

NASA Astrophysics Data System (ADS)

Bouazizi, N.; Louhichi, S.; Ouargli, R.; Bargougui, R.; Vieillard, J.; Derf, F. Le; Azzouz, A.

2017-05-01

A core-shell material was prepared using SBA-15 crystallites as cores for the growth of a ZnO shell, followed by Cu0 dispersion. The resulting Cu/SBA-15@ZnO nanostructure displayed higher specific surface area (SSA) and higher number of smaller pores as compared to the starting materials. Dispersion of fine Cu0NPs induced a compaction of the host matrice and a marked decay of the hydrophilic character, explained in terms of the involvement of terminal hydroxyl groups in competitive sbnd HO:Cu interaction at the expense of H-bridges with water. Heating at 400-450 °C seems to trigger ZnO dehydroxylation with possible self-polycondensation and/or the formation of Si-O-Zn bridges. This is an additional explanation of the significant SSA increase and decrease in the average pore diameter. Both ZnO and Cu0NP incorporation induced shifts in the UV-vis absorption band towards higher wavelengths, indicating a decrease in the optical band gap energy and an improvement of the conductance properties. As compared to ZnO, Cu0NPs produced stronger improvement of the conductance, which was found to increase with higher frequencies. Cu/SBA-15@ZnO also displayed higher affinity towards hydrogen as compared to SBA-15@ZnO and SBA-15 at ambient conditions. These outstanding properties combined to an appreciable thermal stability are worth to be prone to deeper investigations, because they can open promising prospects for Cu/SBA-15@ZnO as sensor, electrode material, electrocatalyst and/or hydrogen capture matrice.

Neutropenia restores virulence to an attenuated Cu,Zn superoxide dismutase-deficient Haemophilus ducreyi strain in the swine model of chancroid.

PubMed

San Mateo, L R; Toffer, K L; Orndorff, P E; Kawula, T H

1999-10-01

Haemophilus ducreyi causes chancroid, a sexually transmitted cutaneous genital ulcer disease associated with increased heterosexual transmission of human immunodeficiency virus. H. ducreyi expresses a periplasmic copper-zinc superoxide dismutase (Cu, Zn SOD) that protects the bacterium from killing by exogenous superoxide in vitro. We hypothesized that the Cu,Zn SOD would protect H. ducreyi from immune cell killing, enhance survival, and affect ulcer development in vivo. In order to test this hypothesis and study the role of the Cu,Zn SOD in H. ducreyi pathogenesis, we compared a Cu,Zn SOD-deficient H. ducreyi strain to its isogenic wild-type parent with respect to survival and ulcer development in immunocompetent and immunosuppressed pigs. The Cu,Zn SOD-deficient strain was recovered from significantly fewer inoculated sites and in significantly lower numbers than the wild-type parent strain or a merodiploid (sodC+ sodC) strain after infection of immunocompetent pigs. In contrast, survival of the wild-type and Cu,Zn SOD-deficient strains was not significantly different in pigs that were rendered neutropenic by treatment with cyclophosphamide. Ulcer severity in pigs was not significantly different between sites inoculated with wild type and sites inoculated with Cu,Zn SOD-deficient H. ducreyi. Our data suggest that the periplasmic Cu,Zn SOD is an important virulence determinant in H. ducreyi, protecting the bacterium from host immune cell killing and contributing to survival and persistence in the host.

Neutropenia Restores Virulence to an Attenuated Cu,Zn Superoxide Dismutase-Deficient Haemophilus ducreyi Strain in the Swine Model of Chancroid

PubMed Central

San Mateo, Lani R.; Toffer, Kristen L.; Orndorff, Paul E.; Kawula, Thomas H.

1999-01-01

Haemophilus ducreyi causes chancroid, a sexually transmitted cutaneous genital ulcer disease associated with increased heterosexual transmission of human immunodeficiency virus. H. ducreyi expresses a periplasmic copper-zinc superoxide dismutase (Cu,Zn SOD) that protects the bacterium from killing by exogenous superoxide in vitro. We hypothesized that the Cu,Zn SOD would protect H. ducreyi from immune cell killing, enhance survival, and affect ulcer development in vivo. In order to test this hypothesis and study the role of the Cu,Zn SOD in H. ducreyi pathogenesis, we compared a Cu,Zn SOD-deficient H. ducreyi strain to its isogenic wild-type parent with respect to survival and ulcer development in immunocompetent and immunosuppressed pigs. The Cu,Zn SOD-deficient strain was recovered from significantly fewer inoculated sites and in significantly lower numbers than the wild-type parent strain or a merodiploid (sodC+ sodC) strain after infection of immunocompetent pigs. In contrast, survival of the wild-type and Cu,Zn SOD-deficient strains was not significantly different in pigs that were rendered neutropenic by treatment with cyclophosphamide. Ulcer severity in pigs was not significantly different between sites inoculated with wild type and sites inoculated with Cu,Zn SOD-deficient H. ducreyi. Our data suggest that the periplasmic Cu,Zn SOD is an important virulence determinant in H. ducreyi, protecting the bacterium from host immune cell killing and contributing to survival and persistence in the host. PMID:10496915

Effect of Si, Mg, and Mg Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cho, H. K.; Lee, J. Y.; Kim, K. S.; Yang, G. M.

2001-12-01

We have studied the structural properties of undoped, Si-doped, Mg-doped, and Mg-Zn codoped GaN using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. When compared with undoped GaN, the dislocation density at the surface of the GaN layer decreases with Si doping and increases with Mg doping. In addition, we observed a reduction of dislocation density by codoping with Zn atoms in the Mg-doped GaN layer. The full width at half maximum of HRXRD shows that Si doping and Mg-Zn codoping improve the structural quality of the GaN layer as compared with undoped and Mg-doped GaN, respectively.

The Assessment for Sensitivity of a NO2 Gas Sensor with ZnGa2O4/ZnO Core-Shell Nanowires—a Novel Approach

PubMed Central

Chen, I-Cherng; Lin, Shiu-Shiung; Lin, Tsao-Jen; Hsu, Cheng-Liang; Hsueh, Ting Jen; Shieh, Tien-Yu

2010-01-01

The application of novel core-shell nanowires composed of ZnGa2O4/ZnO to improve the sensitivity of NO2 gas sensors is demonstrated in this study. The growth of ZnGa2O4/ZnO core-shell nanowires is performed by reactive evaporation on patterned ZnO:Ga/SiO2/Si templates at 600 °C. This is to form the homogeneous structure of the sensors investigated in this report to assess their sensitivity in terms of NO2 detection. These novel NO2 gas sensors were evaluated at working temperatures of 25 °C and at 250 °C, respectively. The result reveals the ZnGa2O4/ZnO core-shell nanowires present a good linear relationship (R2 > 0.99) between sensitivity and NO2 concentration at both working temperatures. These core-shell nanowire sensors also possess the highest response (<90 s) and recovery (<120 s) values with greater repeatability seen for NO2 sensors at room temperature, unlike traditional sensors that only work effectively at much higher temperatures. The data in this study indicates the newly-developed ZnGa2O4/ZnO core-shell nanowire based sensors are highly promising for industrial applications. PMID:22319286

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

PubMed

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys

NASA Astrophysics Data System (ADS)

Maltsev, Dmitry S.; Volkovich, Vladimir A.; Yamshchikov, Leonid F.; Chukin, Andrey V.

2016-09-01

Thermodynamic properties of gadolinium in Ga-Sn and Ga-Zn eutectic based alloys were studied. Temperature dependences of gadolinium activity in the studied alloys were determined at 573-1073 K employing the EMF method. Solubility of gadolinium in the Ga-Sn and Ga-Zn alloys was measured at 462-1073 K using IMCs sedimentation method. Activity coefficients as well as partial and excess thermodynamic functions of gadolinium in the studied alloys were calculated on the basis of the obtained experimental data.

Ga originated kink-and-tail Zn diffusion profiles in InGaAsP and InGaAlAs alloys during MOVPE regrowth

NASA Astrophysics Data System (ADS)

Kitatani, T.; Okamoto, K.; Uchida, K.; Tanaka, S.

2017-12-01

We investigated the diffusion characteristics of Zn in ternary and quaternary alloys of InGaAsP and InGaAlAs, which are important materials in long-wavelength optical communication devices. The measured Zn diffusion profiles of InGaAs, InGaAsP, and InGaAlAs showed kink-and-tail shapes in which Zn concentration fell abruptly at first and then decreased slowly, whereas those of InP and InAlAs showed only abrupt decreases. Thus, only Ga-containing alloys had tail-like profiles. Since this tail was well described by the group-V vacancy related defect model, we deduced that its mechanism is closely related with group-V vacancies in Ga-related bonds such as GaP or GaAs. Furthermore, we demonstrated the possibility that many more group-V vacancies originated from GaP bonds than from GaAs bonds, indicating the difficulty in crystal growth of high quality alloys that have GaP components.

Effect of varying Ga content in ZnO:GaN solid solution synthesized by solution combustion technique for photocatalytic applications

NASA Astrophysics Data System (ADS)

Menon, Sumithra Sivadas; Janani, R.; Baskar, K.; Gupta, Bhavana; Singh, Shubra

2017-05-01

ZnO:GaN (oxy)nitride solid solution has been established as the most efficient non-oxide photocatalyst for water splitting under visible irradiation with one step photoexcitation and also boasts a band gap tunability from 2.8 eV to 2.5 eV[1]. The solid solution of GaN in ZnO is formed by the intersubstitution of few of Zn/O ions by Ga/N ions, and this results in the introduction of new defect levels above the valence band which narrows the effective band gap enabling activity under visible region of spectra. In this work, we report the synthesis of ZnO:GaN solid solution by a solution combustion technique where metal nitrates and urea are used as precursors. The Zn/Ga ratio was varied from 16 to 1 in the precursors. The as synthesized samples were characterized as phase pure by X-ray diffraction, where the wurtzite structure was retained up to Zn/Ga ratio of 5. The Diffuse reflectance spectroscopy studies revealed that as the Ga content in the solid solution increases there is a reduction in band gap, from 2.9 eV to 2.4 eV. The reduced band gap of the samples facilitates its photocatalytic activity under visible region of the spectra as evaluated by photoelectrochemical measurements.

Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules

NASA Astrophysics Data System (ADS)

Yamaguchi, Seira; Jonai, Sachiko; Hara, Kohjiro; Komaki, Hironori; Shimizu-Kamikawa, Yukiko; Shibata, Hajime; Niki, Shigeru; Kawakami, Yuji; Masuda, Atsushi

2015-08-01

Potential-induced degradation (PID) of Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) modules fabricated from integrated submodules is investigated. PID tests were performed by applying a voltage of -1000 V to connected submodule interconnector ribbons at 85 °C. The normalized energy conversion efficiency of a standard module decreases to 0.2 after the PID test for 14 days. This reveals that CIGS modules suffer PID under this experimental condition. In contrast, a module with non-alkali glass shows no degradation, which implies that the degradation occurs owing to alkali metal ions, e.g., Na+, migrating from the cover glass. The results of dynamic secondary ion mass spectrometry show Na accumulation in the n-ZnO transparent conductive oxide layer of the degraded module. A CIGS PV module with an ionomer (IO) encapsulant instead of a copolymer of ethylene and vinyl acetate shows no degradation. This reveals that the IO encapsulant can prevent PID of CIGS modules. A degraded module can recover from its performance losses by applying +1000 V to connected submodule interconnector ribbons from an Al plate placed on the test module.

Growth of Cu2ZnSnSe4 Film under Controllable Se Vapor Composition and Impact of Low Cu Content on Solar Cell Efficiency.

PubMed

Li, Jianjun; Wang, Hongxia; Wu, Li; Chen, Cheng; Zhou, Zhiqiang; Liu, Fangfang; Sun, Yun; Han, Junbo; Zhang, Yi

2016-04-27

It is a challenge to fabricate high quality Cu2ZnSnSe4 (CZTSe) film with low Cu content (Cu/(Zn + Sn) < 0.8). In this work, the growth mechanisms of CZTSe films under different Se vapor composition are investigated by DC-sputtering and a postselenization approach. The composition of Se vapor has important influence on the compactability of the films and the diffusion of elements in the CZTSe films. By adjusting the composition of Se vapor during the selenization process, an optimized two step selenization process is proposed and highly crystallized CZTSe film with low Cu content (Cu/(Zn + Sn) = 0.75) is obtained. Further study of the effect of Cu content on the morphology and photovoltaic performance of the corresponding CZTSe solar cells has shown that the roughness of the CZTSe absorber film increases when Cu content decreases. As a consequence, the reflection loss of CZTSe solar cells reduces dramatically and the short circuit current density of the cells improve from 34.7 mA/cm(2) for Cu/(Zn + Sn) = 0.88 to 38.5 mA/cm(2) for Cu/(Zn + Sn) = 0.75. In addition, the CZTSe solar cells with low Cu content show longer minority carrier lifetime and higher open circuit voltage than the high Cu content devices. A champion performance CZTSe solar cell with 10.4% efficiency is fabricated with Cu/(Zn + Sn) = 0.75 in the CZTSe film without antireflection coating.

Rapid, controllable, one-pot and room-temperature aqueous synthesis of ZnO:Cu nanoparticles by pulsed UV laser and its application for photocatalytic degradation of methyl orange.

PubMed

Arabi, Mozhgan; Baizaee, Seyyed Mahdy; Bahador, Alireza; Otaqsara, Seyed Mohammad Taheri

2018-05-01

Zinc oxide (ZnO) and ZnO:Cu nanoparticles (NPs) were synthesized using a rapid, controllable, one-pot and room-temperature pulsed UV-laser assisted method. UV-laser irradiation was used as an effective energy source in order to gain better control over the NPs size and morphology in aqueous media. Parameters effective in laser assisted synthesis of NPs such as irradiation time and laser shot repetition rate were optimized. Photoluminescence (PL) spectra of ZnO NPs showed a broad emission with two trap state peaks located at 442 and 485 nm related to electronic transition from zinc interstitial level (I Zn ) to zinc vacancy level (V Zn ) and electronic transition from conduction band to the oxygen vacancy level (V O ), respectively. For ZnO:Cu NPs, trap state emissions disappeared completely and a copper (Cu)-related emission appeared. PL intensity of Cu-related emission increased with the increase in concentration of Cu 2+ , so that for molar ratio of Cu:Zn 2%, optimal value of PL intensity was obtained. The photocatalytic activity of Cu-doped ZnO revealed 50 and 100% increasement than that of undoped NPs under UV and visible irradiation, respectively. The enhanced photocatalytic activity could be attributed to smaller crystal size, as well as creation of impurity acceptor levels (T 2 ) inside the ZnO energy band gap. Copyright © 2017 John Wiley & Sons, Ltd.

Comparison of effect of vitamin E-coated dialyzer and oral vitamin E on hemodialysis-induced Cu/Zn-superoxide dismutase.

PubMed

Akiyama, Shinichiro; Inagaki, Masahiro; Tsuji, Mayumi; Gotoh, Hiromichi; Gotoh, Tomomi; Washio, Kazunori; Gotoh, Yoshikazu; Oguchi, Katsuji

2005-01-01

We reported earlier that production of Cu/Zn-superoxide dismutase (SOD) increases markedly in hemodialysis patients but not in non-dialyzed chronic renal failure (CRF) patients. In this study, we compared the antioxidant effects of oral vitamin E supplementation (VE-PO) and vitamin E coating of a dialyzer (VE-BMD) by measuring increased Cu/Zn-SOD in hemodialysis patients. 31 hemodialysis patients were divided into two groups: 16 hemodialysis patients underwent usual dialysis with vitamin E supplementation 600 mg/day while 15 others were dialyzed using vitamin E-coated membrane for 6 months. Total plasma SOD activity was determined by NBT method, plasma Cu/Zn-SOD contents by ELISA and Cu/Zn-SOD mRNA in leukocytes by RT-PCR. VE-PO and VE-BMD showed almost comparable effects on Cu/Zn-SOD contents and its mRNA levels in hemodialysis patients. VE-PO resulted in a progressive decrease of Cu/Zn-SOD content (p < 0.001). A comparable progressive decrease was observed also in VE-BMD (p < 0.0001). Both VE-PO and VE-BMD resulted in a progressive decrease of Cu/Zn-SOD mRNA (p < 0.01), which reached the level of non-dialyzed CRF patients. Copyright (c) 2005 S. Karger AG, Basel.

Nanosized CuO and ZnO catalyst supported on titanium chip for conversion of carbon dioxide to methyl alcohol.

PubMed

Seo, Hyeong-Seok; Park, Chul-Min; Kim, Ki-Joong; Jeong, Woon-Jo; Chung, Min-Chul; Jung, Sang-Chul; Kim, Sang-Chai; Ahn, Ho-Geun

2013-08-01

In order to reutilize spent metallic titanium chips (TC) as catalyst support or photocatalytic materials, the surface of the TC was modified by thermal treatment under air atmosphere. TC-supported nanosized CuO and ZnO catalysts were prepared by impregnation (IMP) and co-precipitation (CP) method, respectively. The catalytic activity for CO2 hydrogenation to CH3OH was investigated using a flow-typed reactor under various reaction pressures. The crystals of CuO and ZnO was well formed on TC. CO2 conversion, CH3OH selectivity, and CH3OH yield were obtained as a function of time on stream over CuO-ZnO/TC catalysts. Conversion of CO2 to CH3OH over CuO-ZnO/TC catalyst by CP method and CuO/ZnO/TC catalyst by IMP method were ca. 16% and ca. 12%, respectively. Conversion of CO2 over CuO-ZnO/TC catalyst by CP method was increased with increasing reaction temperature in the range of 15-30 atm. Maximum selectivity and yield to CH3OH over CuO-ZnO/TC at 250 degrees C were ca. 90% at 20 atm and ca. 18.2% at 30 atm, respectively.

Ultrasensitive non-enzymatic glucose sensor based on three-dimensional network of ZnO-CuO hierarchical nanocomposites by electrospinning

PubMed Central

Zhou, Chunyang; Xu, Lin; Song, Jian; Xing, Ruiqing; Xu, Sai; Liu, Dali; Song, Hongwei

2014-01-01

Three-dimensional (3D) porous ZnO–CuO hierarchical nanocomposites (HNCs) nonenzymatic glucose electrodes with different thicknesses were fabricated by coelectrospinning and compared with 3D mixed ZnO/CuO nanowires (NWs) and pure CuO NWs electrodes. The structural characterization revealed that the ZnO–CuO HNCs were composed of the ZnO and CuO mixed NWs trunk (~200 nm), whose outer surface was attached with small CuO nanoparticles (NPs). Moreover, a good synergetic effect between CuO and ZnO was confirmed. The nonenzymatic biosensing properties of as prepared 3D porous electrodes based on fluorine doped tin oxide (FTO) were studied and the results indicated that the sensing properties of 3D porous ZnO–CuO HNCs electrodes were significantly improved and depended strongly on the thickness of the HNCs. At an applied potential of + 0.7 V, the optimum ZnO–CuO HNCs electrode presented a high sensitivity of 3066.4 μAmM−1cm−2, the linear range up to 1.6 mM, and low practical detection limit of 0.21 μM. It also showed outstanding long term stability, good reproducibility, excellent selectivity and accurate measurement in real serum sample. The formation of special hierarchical heterojunction and the well-constructed 3D structure were the main reasons for the enhanced nonenzymatic biosensing behavior. PMID:25488502

Generalized stacking fault energies, cleavage energies, ionicity and brittleness of Cu(Al/Ga/In)Se2 and CuGa(S/Se/Te)2

NASA Astrophysics Data System (ADS)

Xue, H. T.; Tang, F. L.; Gruhn, T.; Lu, W. J.; Wan, F. C.; Rui, Z. Y.; Feng, Y. D.

2014-04-01

We calculate the generalized stacking fault (GSF) energies and cleavage energies γcl of the chalcopyrite compounds CuAlSe2, CuGaSe2, CuInSe2, CuGaS2 and CuGaTe2 using first principles. From the GSF energies, we obtain the unstable stacking fault energies γus and intrinsic stacking fault energies γisf. By analyzing γus and γisf, we find that the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) direction is the easiest slip direction for these five compounds. Also, for CuInSe2, it is most possible to undergo a dislocation-nucleation-induced plastic deformation along the \\langle \\bar{{1}}\\,1\\,0\\rangle (1 1 2) slip direction. We show that the (1 1 2) plane is the preferable plane for fracture in the five compounds by comparing γcl of the (0 0 1) and (1 1 2) planes. It is also found that both γus and γcl decrease as the cationic or anionic radius increases in these chalcopyrites, i.e. along the sequences CuAlSe2 → CuGaSe2 → CuInSe2 and CuGaS2 → CuGaSe2 → CuGaTe2. Based on the values of the ratio γcl/γus, we discuss the brittle-ductile properties of these compounds. All of the compounds can be considered as brittle materials. In addition, a strong relationship between γcl/γus and the total proportion of ionic bonding in these compounds is found.

Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications

PubMed Central

Su, Ting; Zhang, Haifeng

2017-01-01

Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on the voltage and duration applied to the copper-doped ZnO films by Kelvin probe force microscopy. It is found that the Fermi Level of the 8 at.% Cu-doped ZnO films shifted by 0.53 eV comparing to undoped ZnO films. This shift indicates significant change in the electronic structure and energy balance in Cu-doped ZnO films. The Fermi Level (work function) of zinc oxide films can be tuned by Cu doping, which are important for developing this functional material. In addition, Kelvin probe force microscopy measurements demonstrate that the nature of contact at Pt-coated tip/ZnO:Cu interface is changed from Schottky contact to Ohmic contact by increasing sufficient amount of Cu ions. The charge trapping property of the ZnO films enhance greatly by Cu doping (~10 at.%). The improved stable bipolar charge trapping properties indicate that copper-doped ZnO films are promising for nonvolatile memory applications. PMID:28135335

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Study on room temperature gas-sensing performance of CuO film-decorated ordered porous ZnO composite by In2O3 sensitization

NASA Astrophysics Data System (ADS)

Li, Tian-tian; Bao, Na; Geng, Ai-fang; Yu, Hui; Yang, Ying; Dong, Xiang-ting

2018-02-01

For the first time, ordered mesoporous ZnO nanoparticles have been synthesized by a template method. The electroplating after chemical plating method was creatively used to form copper film on the surface of the prepared ZnO, and then a CuO film-decorated ordered porous ZnO composite (CuO/ZnO) was obtained by a high-temperature oxidation method. In2O3 was loaded into the prepared CuO film-ZnO by an ultrasonic-assisted method to sensitize the room temperature gas-sensing performance of the prepared CuO/ZnO materials. The doped In2O3 could effectively improve the gas-sensing properties of the prepared materials to nitrogen oxides (NOx) at room temperature. The 1% In2O3 doped CuO/ZnO sample (1 wt% In2O3-CuO/ZnO) showed the best gas-sensing properties whose response to 100 ppm NOx reached 82%, and the detectable minimum concentration reached 1 ppm at room temperature. The prepared materials had a good selectivity, better response, very low detection limit, and high sensitivity to NOx gas at room temperature, which would have a great development space in the gas sensor field and a great research value.

Novel room temperature ferromagnetic semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Amita

2004-06-01

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will bemore » higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous distribution of Mn substituting for Zn a 2 + state in the ZnO lattice. Ferromagnetic Resonance (FMR) technique is used to confirm the existence of ferromagnetic ordering at temperatures as high as 425K. The ab initio calculations were found to be consistent with the observation of ferromagnetism arising from fully polarized Mn 2 + state. The key to observed room temperature ferromagnetism in this system is the low temperature processing, which prevents formation of clusters, secondary phases and the host ZnO from becoming n-type. The electronic structure of the same Mn doped ZnO thin films studied using XAS, XES and RIXS, revealed a strong hybridization between Mn 3d and O 2p states, which is an important characteristic of a Dilute magnetic Semiconductor (DMS). It is shown that the various processing conditions like sintering temperature, dopant concentration and the properties of precursors used for making of DMS have a great influence on the final properties. Use of various experimental techniques to verify the physical properties, and to understand the mechanism involved to give rise to ferromagnetism is presented. Methods to improve the magnetic moment in Mn doped ZnO are also described. New promising DMS materials (such as Cu doped ZnO are explored). The demonstrated new capability to fabricate powder, pellets, and thin films of room temperature ferromagnetic semiconductors thus makes possible the realization of a wide range of complex elements for a variety of new multifunctional phenomena related to Spintronic devices as well as magneto-optic components.« less

High-Temperature Formation Phases and Crystal Structure of Hot-Pressed Thermoelectric CuGaTe2 with Chalcopyrite-Type Structure

NASA Astrophysics Data System (ADS)

Fujii, Yosuke; Kosuga, Atsuko

2017-11-01

Polycrystalline CuGaTe2 with a chalcopyrite-type structure consolidated by hot-pressing is a potential candidate as a medium-temperature thermoelectric (TE) material. However, its high-temperature formation phases have rarely been reported to date. Here, we investigated the temperature-dependent formation phases and crystal structure at 300-800 K of hot-pressed CuGaTe2. From synchrotron x-ray diffraction data and crystal structure analysis of the heating and cooling processes, it was clarified that a certain amount of impurity phases, such as Te and CuTe, precipitated from the CuGaTe2 matrix when the temperature was increased (to 500-650 K). This is the temperature range where CuGaTe2 has been reported to show high TE performance. After CuGaTe2 was heated to 800 K, such impurity phases remained, even when cooled to room temperature. They also affected the tetragonal distortion and the x-coordinate of Te in the CuGaTe2 matrix, probably due to deficiencies of Cu and Te in the matrix. Our results reveal detailed information on the formation phases of CuGaTe2 at high temperature and thus provide insight for evaluation of its high-temperature stability and transport properties.

High-Temperature Formation Phases and Crystal Structure of Hot-Pressed Thermoelectric CuGaTe2 with Chalcopyrite-Type Structure

NASA Astrophysics Data System (ADS)

Fujii, Yosuke; Kosuga, Atsuko

2018-06-01

Polycrystalline CuGaTe2 with a chalcopyrite-type structure consolidated by hot-pressing is a potential candidate as a medium-temperature thermoelectric (TE) material. However, its high-temperature formation phases have rarely been reported to date. Here, we investigated the temperature-dependent formation phases and crystal structure at 300-800 K of hot-pressed CuGaTe2. From synchrotron x-ray diffraction data and crystal structure analysis of the heating and cooling processes, it was clarified that a certain amount of impurity phases, such as Te and CuTe, precipitated from the CuGaTe2 matrix when the temperature was increased (to 500-650 K). This is the temperature range where CuGaTe2 has been reported to show high TE performance. After CuGaTe2 was heated to 800 K, such impurity phases remained, even when cooled to room temperature. They also affected the tetragonal distortion and the x-coordinate of Te in the CuGaTe2 matrix, probably due to deficiencies of Cu and Te in the matrix. Our results reveal detailed information on the formation phases of CuGaTe2 at high temperature and thus provide insight for evaluation of its high-temperature stability and transport properties.

Magnetically engineered Cd-free quantum dots as dual-modality probes for fluorescence/magnetic resonance imaging of tumors.

PubMed

Ding, Ke; Jing, Lihong; Liu, Chunyan; Hou, Yi; Gao, Mingyuan

2014-02-01

Magnetically engineered Cd-free CuInS2@ZnS:Mn quantum dots (QDs) were designed, synthesized, and evaluated as potential dual-modality probes for fluorescence and magnetic resonance imaging (MRI) of tumors in vivo. The synthesis of Mn-doped core-shell structured CuInS2@ZnS mainly comprised three steps, i.e., the preparation of fluorescent CuInS2 seeds, the particle surface coating of ZnS, and the Mn-doping of the ZnS shells. Systematic spectroscopy studies were carried out to illustrate the impacts of ZnS coating and the following Mn-doping on the optical properties of the QDs. In combination with conventional fluorescence, fluorescence excitation, and time-resolved fluorescence measurements, the structure of CuInS2@ZnS:Mn QDs prepared under optimized conditions presented a Zn gradient CuInS2 core and a ZnS outer shell, while Mn ions were mainly located in the ZnS shell, which well balanced the optical and magnetic properties of the resultant QDs. For the following in vivo imaging experiments, the hydrophobic CuInS2@ZnS:Mn QDs were transferred into water upon ligand exchange reactions by replacing the 1-dodecanethiol ligand with dihydrolipoic acid-poly(ethylene glycol) (DHLA-PEG) ligand. The MTT assays based on HeLa cells were carried out to evaluate the cytotoxicity of the current Cd-free CuInS2@ZnS:Mn QDs for comparing with that of water soluble CdTe QDs. Further in vivo fluorescence and MR imaging experiments suggested that the PEGylated CuInS2@ZnS:Mn QDs could well target both subcutaneous and intraperitoneal tumors in vivo. Copyright © 2013 Elsevier Ltd. All rights reserved.

Computational investigation of structural and electronic properties of aqueous interfaces of GaN, ZnO, and a GaN/ZnO alloy.

PubMed

Kharche, Neerav; Hybertsen, Mark S; Muckerman, James T

2014-06-28

The GaN/ZnO alloy functions as a visible-light photocatalyst for splitting water into hydrogen and oxygen. As a first step toward understanding the mechanism and energetics of water-splitting reactions, we investigate the microscopic structure of the aqueous interfaces of the GaN/ZnO alloy and compare them with the aqueous interfaces of pure GaN and ZnO. Specifically, we have studied the (101̄0) surface of GaN and ZnO and the (101̄0) and (12̄10) surfaces of the 1 : 1 GaN/ZnO alloy. The calculations are carried out using first-principles density functional theory based molecular dynamics (DFT-MD). The structure of water within a 3 Å distance from the semiconductor surface is significantly altered by the acid/base chemistry of the aqueous interface. Water adsorption on all surfaces is substantially dissociative such that the surface anions (N or O) act as bases accepting protons from dissociated water molecules while the corresponding hydroxide ions bond with surface cations (Ga or Zn). Additionally, the hard-wall interface presented by the semiconductor imparts ripples in the density of water. Beyond a 3 Å distance from the semiconductor surface, water exhibits a bulk-like hydrogen bond network and oxygen-oxygen radial distribution function. Taken together, these characteristics represent the resting (or "dark") state of the catalytic interface. The electronic structure analysis of the aqueous GaN/ZnO interface suggests that the photogenerated holes may get trapped on interface species other than the adsorbed OH(-) ions. This suggests additional dynamical steps in the water oxidation process.

Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)1-x(ZnO)x solid solution.

PubMed

Wu, Aimin; Li, Jing; Liu, Baodan; Yang, Wenjin; Jiang, Yanan; Liu, Lusheng; Zhang, Xinglai; Xiong, Changmin; Jiang, Xin

2017-02-21

(GaN) 1-x (ZnO) x solid solution has attracted extensive attention due to its feasible band-gap tunability and excellent photocatalytic performance in overall water splitting. However, its potential application in the photodegradation of organic pollutants and environmental processing has rarely been reported. In this study, we developed a rapid synthesis process to fabricate porous (GaN) 1-x (ZnO) x solid solution with a tunable band gap in the range of 2.38-2.76 eV for phenol photodegradation. Under visible-light irradiation, (GaN) 0.75 (ZnO) 0.25 solid solution achieved the highest photocatalytic performance compared to other (GaN) 1-x (ZnO) x solid solutions with x = 0.45, 0.65 and 0.85 due to its higher redox capability and lower lattice deformation. Slight Ag decoration with a content of 1 wt% on the surface of the (GaN) 0.75 (ZnO) 0.25 solid solution leads to a significant enhancement in phenol degradation, with a reaction rate eight times faster than that of pristine (GaN) 0.75 (ZnO) 0.25 . Interestingly, phenol in aqueous solution (10 mg L -1 ) can also be completely degraded within 60 min, even under the direct exposure of sunlight irradiation. The photocurrent response indicates that the enhanced photocatalytic activity of (GaN) 0.75 (ZnO) 0.25 /Ag is directly induced by the improved transfer efficiency of the photogenerated electrons at the interface. The excellent phenol degradation performance of (GaN) 1-x (ZnO) x /Ag further broadens their promising photocatalytic utilization in environmental processing, besides in overall water splitting for hydrogen production.

Subcellular metal imaging identifies dynamic sites of Cu accumulation in Chlamydomonas

DOE PAGES

Hong-Hermesdorf, Anne; Miethke, Marcus; Gallaher, Sean D.; ...

2014-10-26

Here we identified a Cu-accumulating structure with a dynamic role in intracellular Cu homeostasis. During Zn limitation, Chlamydomonas reinhardtii hyperaccumulates Cu, a process dependent on the nutritional Cu sensor CRR1, but it is functionally Cu deficient. Visualization of intracellular Cu revealed major Cu accumulation sites coincident with electron-dense structures that stained positive for low pH and polyphosphate, suggesting that they are lysosome-related organelles. Nano-secondary ion MS showed colocalization of Ca and Cu, and X-ray absorption spectroscopy was consistent with Cu + accumulation in an ordered structure. Zn resupply restored Cu homeostasis concomitant with reduced abundance of these structures. Cu isotopemore » labeling demonstrated that sequestered Cu + became bioavailable for the synthesis of plastocyanin, and transcriptome profiling indicated that mobilized Cu became visible to CRR1. Cu trafficking to intracellular accumulation sites may be a strategy for preventing protein mismetallation during Zn deficiency and enabling efficient cuproprotein metallation or remetallation upon Zn resupply.« less

I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

DOEpatents

Chen, Wen S.; Stewart, John M.

1992-01-07

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

Phosphor-free, white-light LED under alternating-current operation.

PubMed

Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

2014-11-15

A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

IR-Spectroscopic Study on the Interface of Cu-Based Methanol Synthesis Catalysts: Evidence for the Formation of a ZnO Overlayer

DOE PAGES

Schumann, Julia; Kröhnert, Jutta; Frei, Elias; ...

2017-08-28

Carbon monoxide was applied as probe molecule to compare the surface of a ZnO-containing (Cu/ZnO:Al) and a ZnO-free (Cu/MgO) methanol synthesis catalyst (copper content 70 atomic %) after reduction in hydrogen at 523 K by DRIFT spectroscopy. Nano-structured, mainly metallic copper was detected on the surface of the Cu/MgO catalyst. In contrast, the high energy of the main peak in the spectrum of CO adsorbed on reduced Cu/ZnO:Al (2125 cm -1) proves that metallic copper is largely absent on the surface of this catalyst. The band is assigned to Zn δ+–CO. The presence of not completely reduced Cu δ+–CO speciesmore » cannot be excluded. The results are interpreted in terms of a partial coverage of the copper nano-particles in the Cu/ZnO:Al catalyst by a thin layer of metastable, defective zinc oxide. Minor contributions in the spectrum at 2090 and 2112 cm -1 due to nano-structured Cu 0–CO and CO adsorbed on highly defective Cu 0, respectively, indicate that the coverage of metallic copper is not complete.« less

IR-Spectroscopic Study on the Interface of Cu-Based Methanol Synthesis Catalysts: Evidence for the Formation of a ZnO Overlayer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schumann, Julia; Kröhnert, Jutta; Frei, Elias

Carbon monoxide was applied as probe molecule to compare the surface of a ZnO-containing (Cu/ZnO:Al) and a ZnO-free (Cu/MgO) methanol synthesis catalyst (copper content 70 atomic %) after reduction in hydrogen at 523 K by DRIFT spectroscopy. Nano-structured, mainly metallic copper was detected on the surface of the Cu/MgO catalyst. In contrast, the high energy of the main peak in the spectrum of CO adsorbed on reduced Cu/ZnO:Al (2125 cm -1) proves that metallic copper is largely absent on the surface of this catalyst. The band is assigned to Zn δ+–CO. The presence of not completely reduced Cu δ+–CO speciesmore » cannot be excluded. The results are interpreted in terms of a partial coverage of the copper nano-particles in the Cu/ZnO:Al catalyst by a thin layer of metastable, defective zinc oxide. Minor contributions in the spectrum at 2090 and 2112 cm -1 due to nano-structured Cu 0–CO and CO adsorbed on highly defective Cu 0, respectively, indicate that the coverage of metallic copper is not complete.« less

Amorphous In-Ga-Zn-O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

NASA Astrophysics Data System (ADS)

Chen, Charlene; Abe, Katsumi; Fung, Tze-Ching; Kumomi, Hideya; Kanicki, Jerzy

2009-03-01

In this paper, we analyze application of amorphous In-Ga-Zn-O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (ΔVT) within acceptable operating error range.

Interplay of Cu and oxygen vacancy in optical transitions and screening of excitons in ZnO:Cu films

NASA Astrophysics Data System (ADS)

Darma, Yudi; Seng Herng, Tun; Marlina, Resti; Fauziah, Resti; Ding, Jun; Rusydi, Andrivo

2014-02-01

We study room temperature optics and electronic structures of ZnO:Cu films as a function of Cu concentration using a combination of spectroscopic ellipsometry, photoluminescence, and ultraviolet-visible absorption spectroscopy. Mid-gap optical states, interband transitions, and excitons are observed and distinguishable. We argue that the mid-gap states are originated from interactions of Cu and oxygen vacancy (Vo). They are located below conduction band (Zn4s) and above valence band (O2p) promoting strong green emission and narrowing optical band gap. Excitonic states are screened and its intensities decrease upon Cu doping. Our results show the importance of Cu and Vo driving the electronic structures and optical transitions in ZnO:Cu films.

Hints for Metal-Preference Protein Sequence Determinants: Different Metal Binding Features of the Five Tetrahymena thermophila Metallothioneins

PubMed Central

Espart, Anna; Marín, Maribel; Gil-Moreno, Selene; Palacios, Òscar; Amaro, Francisco; Martín-González, Ana; Gutiérrez, Juan C.; Capdevila, Mercè; Atrian, Sílvia

2015-01-01

The metal binding preference of metallothioneins (MTs) groups them in two extreme subsets, the Zn/Cd- and the Cu-thioneins. Ciliates harbor the largest MT gene/protein family reported so far, including 5 paralogs that exhibit relatively low sequence similarity, excepting MTT2 and MTT4. In Tetrahymena thermophila, three MTs (MTT1, MTT3 and MTT5) were considered Cd-thioneins and two (MTT2 and MTT4) Cu-thioneins, according to gene expression inducibility and phylogenetic analysis. In this study, the metal-binding abilities of the five MTT proteins were characterized, to obtain information about the folding and stability of their cognate- and non-cognate metal complexes, and to characterize the T. thermophila MT system at protein level. Hence, the five MTTs were recombinantly synthesized as Zn2+-, Cd2+- or Cu+-complexes, which were analyzed by electrospray mass spectrometry (ESI-MS), circular dichroism (CD), and UV-vis spectrophotometry. Among the Cd-thioneins, MTT1 and MTT5 were optimal for Cd2+ coordination, yielding unique Cd17- and Cd8- complexes, respectively. When binding Zn2+, they rendered a mixture of Zn-species. Only MTT5 was capable to coordinate Cu+, although yielding heteronuclear Zn-, Cu-species or highly unstable Cu-homometallic species. MTT3 exhibited poor binding abilities both for Cd2+ and for Cu+, and although not optimally, it yielded the best result when coordinating Zn2+. The two Cu-thioneins, MTT2 and MTT4 isoforms formed homometallic Cu-complexes (major Cu20-MTT) upon synthesis in Cu-supplemented hosts. Contrarily, they were unable to fold into stable Cd-complexes, while Zn-MTT species were only recovered for MTT4 (major Zn10-MTT4). Thus, the metal binding preferences of the five T. thermophila MTs correlate well with their previous classification as Cd- and Cu-thioneins, and globally, they can be classified from Zn/Cd- to Cu-thioneins according to the gradation: MTT1>MTT5>MTT3>MTT4>MTT2. The main mechanisms underlying the evolution and specialization of the MTT metal binding preferences may have been internal tandem duplications, presence of doublet and triplet Cys patterns in Zn/Cd-thioneins, and optimization of site specific amino acid determinants (Lys for Zn/Cd- and Asn for Cu-coordination). PMID:25798065

Changing the thickness of two layers: i-ZnO nanorods, p-Cu2O and its influence on the carriers transport mechanism of the p-Cu2O/i-ZnO nanorods/n-IGZO heterojunction.

PubMed

Ke, Nguyen Huu; Trinh, Le Thi Tuyet; Phung, Pham Kim; Loan, Phan Thi Kieu; Tuan, Dao Anh; Truong, Nguyen Huu; Tran, Cao Vinh; Hung, Le Vu Tuan

2016-01-01

In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Wenting; Zhang, Qinggang; Wang, Ruiqin

Unsaturated metal species (UMS) confined in nanomaterials play important roles for electron transfer in a wide range of catalytic reactions. However, the limited fabrication methods of UMS restrict their wider catalytic applications. Here in this paper, we report on the synergy of unsaturated Zn and Cu dopants confined in carbon dots (ZnCu-CDs) to produce enhanced electron transfer and photooxidation processes in the doped CDs. The Zn/Cu species chelate with the carbon matrix mainly through Cu-O(N)-Zn-O(N)-Cu complexes. Within this structure, Cu 2+ acts as a mild oxidizer that facilely increases the unsaturated Zn content and also precisely tunes the unsaturated Znmore » valence state to Zn d+, where d is between 1 and 2, instead of Zn. With the help of UMS, electron-transfer pathways are produced, enhancing both the electron donating (7.0 times) and-accepting (5.3 times) abilities relative to conventional CDs. Because of these synergistic effects, the photocatalytic efficiency of CDs in photooxidation reactions is shown to improve more than 5-fold.« less

Comment on "Active sites for CO2 hydrogenation to methanol on Cu/ZnO catalysts".

PubMed

Nakamura, Junji; Fujitani, Tadahiro; Kuld, Sebastian; Helveg, Stig; Chorkendorff, Ib; Sehested, Jens

2017-09-01

Kattel et al (Reports, 24 March 2017, p. 1296) report that a zinc on copper (Zn/Cu) surface undergoes oxidation to zinc oxide/copper (ZnO/Cu) during carbon dioxide (CO 2 ) hydrogenation to methanol and conclude that the Cu-ZnO interface is the active site for methanol synthesis. Similar experiments conducted two decades ago by Fujitani and Nakamura et al demonstrated that Zn is attached to formate rather than being fully oxidized. Copyright © 2017, American Association for the Advancement of Science.

Luminescence Characteristics of ZnGa2O4 Thick Film Doped with Mn2+ and Cr3+ at Various Sintering Temperatures

NASA Astrophysics Data System (ADS)

Cha, Jae Hyeok; Kim, Kyung Hwan; Park, Yong Seo; Kwon, Sang Jik; Choi, Hyung Wook

2007-10-01

ZnGa2O4 phosphor separately doped with Mn2+ and Cr3+ was synthesized by solid-state reaction, and thick films were deposited by screen printing. The X-ray diffraction (XRD) patterns of ZnGa2O4 phosphor thick films show a (311) main peak and a spinal phase. Uniform distribution and filled morphology of the doped ZnGa2O4 phosphor thick films were formed at the sintering temperature of 1100 °C. The CL spectrum of Mn2+-doped ZnGa2O4 shows the main peak of 512 nm green emission with the 4T1→6A1 transition of Mn2+ ions and the CL spectrum of Cr3+-doped ZnGa2O4 shows the main peak of 716 nm red emission with the 2E→4A2 transition of Cr3+ ions.

Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

NASA Astrophysics Data System (ADS)

Zhao, Xiaolong; Wu, Zhenping; Zhi, Yusong; An, Yuehua; Cui, Wei; Li, Linghong; Tang, Weihua

2017-03-01

Highly oriented (\\bar{2} 0 1 ) Ga2-x Zn x O3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)‧ under 254 nm ultraviolet excitation, and the maximum was obtained at x  =  0.8. A metal-semiconductor-metal structured solar-blind photodetector based on Ga2-x Zn x O3 (x  =  0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for β-Ga2-x Zn x O3 (x  =  0.8) photodetector were observed with 254 nm ultraviolet illumination.

Efficiency enhancement using a Zn1- x Ge x -O thin film as an n-type window layer in Cu2O-based heterojunction solar cells

NASA Astrophysics Data System (ADS)

Minami, Tadatsugu; Nishi, Yuki; Miyata, Toshihiro

2016-05-01

Efficiency enhancement was achieved in Cu2O-based heterojunction solar cells fabricated with a zinc-germanium-oxide (Zn1- x Ge x -O) thin film as the n-type window layer and a p-type Na-doped Cu2O (Cu2O:Na) sheet prepared by thermally oxidizing Cu sheets. The Ge content (x) dependence of the obtained photovoltaic properties of the heterojunction solar cells is mainly explained by the conduction band discontinuity that results from the electron affinity difference between Zn1- x Ge x -O and Cu2O:Na. The optimal value of x in Zn1- x Ge x -O thin films prepared by pulsed laser deposition was observed to be 0.62. An efficiency of 8.1% was obtained in a MgF2/Al-doped ZnO/Zn0.38Ge0.62-O/Cu2O:Na heterojunction solar cell.

Towards Stable CuZnAl Slurry Catalysts for the Synthesis of Ethanol from Syngas

NASA Astrophysics Data System (ADS)

Dong, Weibing; Gao, Zhihua; Zhang, Qian; Huang, Wei

2018-07-01

A stable CuZnAl slurry catalyst for the synthesis of ethanol from syngas has been developed by adjusting the heat treatment conditions of the complete liquid-phase method. The activity evaluation results showed that the CuZnAl catalyst, when heat-treated under a high pressure and temperature, was a stable catalyst for the synthesis of ethanol. The selectivity of ethanol using the CuZnAl slurry catalyst, which was heat-treated at 553 K under 4.0 MPa, increased continuously with time and was stable at approximately 26.00% after 144 h. The characterization results indicated that the CuZnAl slurry catalyst heat-treated under high pressure conditions could facilitate the formation of a more perfect structure with a larger specific surface area. The prepared catalyst contained a balance of strong and weak acid sites, an appropriate form of Cu2O and a high Cu/Zn atomic ratio at the catalyst surface, providing its stability in ethanol synthesis from syngas.

Room temperature ferromagnetism in Cu doped ZnO

NASA Astrophysics Data System (ADS)

Ali, Nasir; Singh, Budhi; Khan, Zaheer Ahmed; Ghosh, Subhasis

2018-05-01

We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition.

Effect of Gold Nanoparticles Addition to CuO–ZnO/A₂O₃ Catalyst in Conversion of Carbon Dioxide to Methanol.

PubMed

Kim, Ki-Joong; Ahn, Ho-Geun

2017-04-01

Hydrogenation of carbon dioxide (CO₂) into methanol (CH₃OH) was carried out in the CuO–ZnO based supported gold catalyst prepared by the co-precipitation method. When gold nanoparticles were added to the CuO–ZnO/Al2O₃ catalysts (CuO–ZnO/Au/Al₂O₃), the CO₂ conversion and CH₃OH yield were increased (two times higher than that of CuO–ZnO/Al₂O₃ catalyst) with increasing reaction pressure, but selectivity of CH3OH was decreased. The main reason of this result could suggest the importance gold-oxides interface in CH₃OH formation through hydrogenation of CO₂. Maximum selectivity and yield to CH₃OH over CuO–ZnO/Au/Al₂O₃ were obtained at 250°C and under 15–20 bars.

Effect of Cu-Dopant on the Structural, Magnetic and Electrical Properties of ZnO

NASA Astrophysics Data System (ADS)

Aryanto, D.; Kurniawan, C.; Subhan, A.; Sudiro, T.; Sebayang, P.; Ginting, M.; Siregar, S. M. K.; Nasruddin, M. N.

2017-05-01

Zn1- x Cu x O (x = 0, 2, 3, and 4 at.%) was synthesized by using solid-state reaction technique. The ZnO and CuO powders were mixed and then milled by using high-speed shaker mill. The influence of Cu dopants on the structure, magnetic, and electrical properties was investigated by using XRD, VSM, and I-V and C-V measurements. The XRD analysis showed that the Zn1- x Cu x O had hexagonal wurtzite polycrystalline. The diffraction intensity decreased and the peak position shifted directly to a higher 2θ angle with increasing the dopant concentration. Furthermore, the lattice parameters decreased when the ZnO was doped with x = 0.04, which indicated that the crystal structure changed. The increase of Cu dopants was believed to affect the magnetic and electrical properties of ZnO.

Predicting a quaternary tungsten oxide for sustainable photovoltaic application by density functional theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarker, Pranab; Huda, Muhammad N., E-mail: huda@uta.edu; Al-Jassim, Mowafak M.

2015-12-07

A quaternary oxide, CuSnW{sub 2}O{sub 8} (CTTO), has been predicted by density functional theory (DFT) to be a suitable material for sustainable photovoltaic applications. CTTO possesses band gaps of 1.25 eV (indirect) and 1.37 eV (direct), which were evaluated using the hybrid functional (HSE06) as a post-DFT method. The hole mobility of CTTO was higher than that of silicon. Further, optical absorption calculations demonstrate that CTTO is a better absorber of sunlight than Cu{sub 2}ZnSnS{sub 4} and CuIn{sub x}Ga{sub 1−x}Se{sub 2} (x = 0.5). In addition, CTTO exhibits rigorous thermodynamic stability comparable to WO{sub 3}, as investigated by different thermodynamic approaches such as bondingmore » cohesion, fragmentation tendency, and chemical potential analysis. Chemical potential analysis further revealed that CTTO can be synthesized at flexible experimental growth conditions, although the co-existence of at least one secondary phase is likely. Finally, like other Cu-based compounds, the formation of Cu vacancies is highly probable, even at Cu-rich growth condition, which could introduce p-type activity in CTTO.« less

Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

NASA Astrophysics Data System (ADS)

Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

2017-08-01

Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

Zn-dopant dependent defect evolution in GaN nanowires.

PubMed

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-21

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.

Photoluminescence of vapor and solution grown ZnTe single crystals

NASA Astrophysics Data System (ADS)

Biao, Y.; Azoulay, M.; George, M. A.; Burger, A.; Collins, W. E.; Silberman, E.; Su, C.-H.; Volz, M. E.; Szofran, F. R.; Gillies, D. C.

1994-04-01

ZnTe single crystals grown by horizontal physical vapor transport (PVT) and by vertical traveling heater method (THM) from a Te solution were characterized by photoluminescence (PL) at 10.6 K and by atomic force microscopy (AFM). Copper was identified by PL as a major impurity existing in both crystals, forming a substitutional acceptor, Cu Zn. The THM ZnTe crystals were found to contain more Cu impurity than the PVT ZnTe crystals. The formation of Cu Zn-V Te complexes and the effects of annealing, oxygen contamination and intentional Cu doping were also studied. Finally, the surface morphology analyzed by AFM was correlated to the PL results.

Cyclotron production of {sup 61}Cu using natural Zn and enriched {sup 64}Zn targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Asad, A. H.; Smith, S. V.; Chan, S.

2012-12-19

Copper-61 ({sup 61}Cu) shares with {sup 64}Cu certain advantages for PET diagnostic imaging, but has a shorter half-life (3.4hr vs. 12.7hr) and a greater probability of positron production per disintegration (61% vs. 17.9%). One important application is for in vivo imaging of hypoxic tissue. In this study {sup 61}Cu was produced using the {sup 64}Zn(p,{alpha}){sup 61}Cu reaction on natural Zn or enriched {sup 64}Zn targets. The enriched {sup 64}Zn (99.82%) was electroplated onto high purity gold or silver foils or onto thin Al discs. A typical target bombardment used 30{mu}A; at 11.7, 14.5 or 17.6MeV over 30-60min. The {sup 61}Cumore » (radiochemical purity of >95%) was separated using a combination of cation and anion exchange columns. The {sup 64}Zn target material was recovered after each run, for re-use. In a direct comparison with enriched {sup 64}Zn-target results, {sup 61}Cu production using the cheaper {sup nat}Zn target proved to be an effective alternative.« less

Fibroblast responses and antibacterial activity of Cu and Zn co-doped TiO2 for percutaneous implants

NASA Astrophysics Data System (ADS)

Zhang, Lan; Guo, Jiaqi; Yan, Ting; Han, Yong

2018-03-01

In order to enhance skin integration and antibacterial activity of Ti percutaneous implants, microporous TiO2 coatings co-doped with different doses of Cu2+ and Zn2+ were directly fabricated on Ti via micro-arc oxidation (MAO). The structures of coatings were investigated; the behaviors of fibroblasts (L-929) as well as the response of Staphylococcus aureus (S. aureus) were evaluated. During the MAO process, a large number of micro-arc discharges forming on Ti performed as penetrating channels; O2-, Ca2+, Zn2+, Cu2+ and PO43- delivered via the channels, giving rise to the formation of doped TiO2. Surface characteristics including phase component, topography, surface roughness and wettability were almost the same for different coatings, whereas, the amount of Cu doped in TiO2 decreased with the increased Zn amount. Compared with Cu single-doped TiO2 (0.77 Wt% Cu), the co-doped with appropriate amounts of Cu and Zn, for example, 0.55 Wt% Cu and 2.53 Wt% Zn, further improved proliferation of L-929, facilitated fibroblasts to switch to fibrotic phenotype, and enhanced synthesis of collagen I as well as the extracellular collagen secretion; the antibacterial properties including contact-killing and release-killing were also enhanced. By analyzing the relationship of Cu/Zn amount in TiO2 and the behaviors of L-929 and S. aureus, it can be deduced that when the doped Zn is in a low dose (<1.79 Wt%), the behaviors of L-929 and S. aureus are sensitive to the reduced amount of Cu2+, whereas, Zn2+ plays a key role in accelerating fibroblast functions and reducing S. aureus when its dose obviously increases from 2.63 to 6.47 Wt%.

Potential risks of copper, zinc, and cadmium pollution due to pig manure application in a soil-rice system under intensive farming: a case study of Nanhu, China.

PubMed

Shi, Jiachun; Yu, Xiulin; Zhang, Mingkui; Lu, Shenggao; Wu, Weihong; Wu, Jianjun; Xu, Jianming

2011-01-01

Heavy metal (copper [Cu], zinc [Zn], and cadmium [Cd]) pollution of soils from pig manures in soil-rice ( L.) systems under intensive farming was investigated, taking Nanhu, China, as the case study area. Two hundred pig manures and 154 rice straws, brown rice samples, and corresponding surface soil (0-15 cm) samples were collected in paddy fields from 150 farms in 16 major villages within the study area. The mean Cu and Zn concentrations in pig manures consistently exceeded the related standard. About 44 and 60% of soil samples exceed the Chinese Soil Cu and Cd Environmental Quality Standards, respectively. The concentration of Cu, Zn, and Cd in brown rice did not exceed the Chinese Food Hygiene Standard. There was a significant positive correlation between total Cu and Zn contents in soil and application rate of pig manures. Strong correlation was observed between the extractable Cu, Zn, and Cd in soil and the Cu, Zn, and Cd contents in the brown rice. The spatial distribution maps of Cu and Zn concentrations in brown rice, straw, and extractable soil Cu and Zn concentration also showed similar geographical trends. Further analyses on heavy metals loading flux and accumulation rates from pig manure applied suggested that Cu and Cd contents in soil currently have already exceeded the maximum permissible limit, and Zn, if still at current manure application rates, will reach the ceiling concentration limits in 9 yr. This study assists in understanding the risk of heavy metals accumulating from pig manure applications to agricultural soils. Copyright © by the American Society of Agronomy, Crop Science Society of America, and Soil Science Society of America, Inc.

Improved Heterojunction Quality in Cu2O-based Solar Cells Through the Optimization of Atmospheric Pressure Spatial Atomic Layer Deposited Zn1-xMgxO

PubMed Central

Ievskaya, Yulia; Hoye, Robert L. Z.; Sadhanala, Aditya; Musselman, Kevin P.; MacManus-Driscoll, Judith L.

2016-01-01

Atmospheric pressure spatial atomic layer deposition (AP-SALD) was used to deposit n-type ZnO and Zn1-xMgxO thin films onto p-type thermally oxidized Cu2O substrates outside vacuum at low temperature. The performance of photovoltaic devices featuring atmospherically fabricated ZnO/Cu2O heterojunction was dependent on the conditions of AP-SALD film deposition, namely, the substrate temperature and deposition time, as well as on the Cu2O substrate exposure to oxidizing agents prior to and during the ZnO deposition. Superficial Cu2O to CuO oxidation was identified as a limiting factor to heterojunction quality due to recombination at the ZnO/Cu2O interface. Optimization of AP-SALD conditions as well as keeping Cu2O away from air and moisture in order to minimize Cu2O surface oxidation led to improved device performance. A three-fold increase in the open-circuit voltage (up to 0.65 V) and a two-fold increase in the short-circuit current density produced solar cells with a record 2.2% power conversion efficiency (PCE). This PCE is the highest reported for a Zn1-xMgxO/Cu2O heterojunction formed outside vacuum, which highlights atmospheric pressure spatial ALD as a promising technique for inexpensive and scalable fabrication of Cu2O-based photovoltaics. PMID:27500923

Identification of the copper-zinc superoxide dismutase activity in Mycoplasma hyopneumoniae.

PubMed

Chen, J R; Weng, C N; Ho, T Y; Cheng, I C; Lai, S S

2000-05-11

Copper-zinc superoxide dismutase (Cu/ZnSOD), a key enzyme in defense against toxic oxygen-free radicals, is widespread in eukaryotes and several species of gram-negative bacteria. The presence of this enzyme in Mycoplasma hyopneumoniae (M. hyopneumoniae), the primary pathogen of mycoplasmal pneumonia in pigs, was examined since the polyclonal antibody against bovine Cu/ZnSOD was dominantly cross-reactive with the M. hyopneumoniae Cu/ZnSOD from whole cellular proteins. In situ activity staining on SDS-PAGE showed that the molecular mass of M. hyopneumoniae Cu/ZnSOD in reducing form was approximately 17kDa. The presence of Cu and Zn ions at the active site of the enzyme was confirmed on the basis of inhibition by KCN and by H(2)O(2). The activity of M. hyopneumoniae Cu/ZnSOD on both SDS- and native-polyacrylamide gels was completely inhibited by 2mM KCN and the gels showed no iron-containing SOD (FeSOD) or manganese-containing SOD (MnSOD) in the crude extracts. The activity of M. hyopneumoniae Cu/ZnSOD in crude extract was 70units/mg protein and was 55% inhibited by 5mM KCN and 56% inactivated by 40mM H(2)O(2). This enzyme was growth-stage dependent and evidenced markedly higher production during the early log phase. Different expression levels of Cu/ZnSOD activity in field isolates were also detected. Taken together, the presence of Cu/ZnSOD in M. hyopneumoniae was identified for the first time.

The effect of Cu/Zn molar ratio on CO{sub 2} hydrogenation over Cu/ZnO/ZrO{sub 2}/Al{sub 2}O{sub 3} catalyst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shaharun, Salina, E-mail: salinashaharun@gmail.com, E-mail: maizats@petronas.com.my; Shaharun, Maizatul S., E-mail: salinashaharun@gmail.com, E-mail: maizats@petronas.com.my; Taha, Mohd F., E-mail: faisalt@petronas.com.my

2014-10-24

Catalytic hydrogenation of carbon dioxide (CO{sub 2}) to methanol is an attractive way to recycle and utilize CO{sub 2}. A series of Cu/ZnO/Al{sub 2}O{sub 3}/ZrO{sub 2} catalysts (CZAZ) containing different molar ratios of Cu/Zn were prepared by the co-precipitation method and investigated in a stirred slurry autoclave system. The catalysts were characterized by temperature-programmed reduction (TPR), field emission scanning electron microscopy-energy dispersive analysis (FESEM-EDX), X-ray diffraction (XRD) and N{sub 2} adsorption-desorption. Higher surface area, SA{sub BET} values (42.6–59.9 m{sup 2}/g) are recorded at low (1) and high (5) Cu/Zn ratios with the minimum value of 35.71 m{sup 2}/g found formore » a Cu/Zn of 3. The reducibility of the metal oxides formed after calcination of catalyst samples was also affected due to change in metal-support interaction. At a low reaction temperature of 443 K, total gas pressure of 3.0 MPa and 0.1 g/mL of the CZAZ catalyst, the selectivity to methanol decreased as the Cu/Zn molar ratio increased, and the maximum selectivity of 67.73 was achieved at Cu/Zn molar ratio of 1. With a reaction time of 3h, the best performing catalyst was CZAZ75 with Cu/Zn molar ratio of 5 giving methanol yield of 79.30%.« less

Copper doping of ZnO crystals by transmutation of 64Zn to 65Cu: An electron paramagnetic resonance and gamma spectroscopy study

NASA Astrophysics Data System (ADS)

Recker, M. C.; McClory, J. W.; Holston, M. S.; Golden, E. M.; Giles, N. C.; Halliburton, L. E.

2014-06-01

Transmutation of 64Zn to 65Cu has been observed in a ZnO crystal irradiated with neutrons. The crystal was characterized with electron paramagnetic resonance (EPR) before and after the irradiation and with gamma spectroscopy after the irradiation. Major features in the gamma spectrum of the neutron-irradiated crystal included the primary 1115.5 keV gamma ray from the 65Zn decay and the positron annihilation peak at 511 keV. Their presence confirmed the successful transmutation of 64Zn nuclei to 65Cu. Additional direct evidence for transmutation was obtained from the EPR of Cu2+ ions (where 63Cu and 65Cu hyperfine lines are easily resolved). A spectrum from isolated Cu2+ (3d9) ions acquired after the neutron irradiation showed only hyperfine lines from 65Cu nuclei. The absence of 63Cu lines in this Cu2+ spectrum left no doubt that the observed 65Cu signals were due to transmuted 65Cu nuclei created as a result of the neutron irradiation. Small concentrations of copper, in the form of Cu+-H complexes, were inadvertently present in our as-grown ZnO crystal. These Cu+-H complexes are not affected by the neutron irradiation, but they dissociate when a crystal is heated to 900 °C. This behavior allowed EPR to distinguish between the copper initially in the crystal and the copper subsequently produced by the neutron irradiation. In addition to transmutation, a second major effect of the neutron irradiation was the formation of zinc and oxygen vacancies by displacement. These vacancies were observed with EPR.

Evaluation of structural, morphological and magnetic properties of CuZnNi (CuxZn0.5-xNi0.5Fe2O4) nanocrystalline ferrites for core, switching and MLCI's applications

NASA Astrophysics Data System (ADS)

Akhtar, Majid Niaz; Khan, Muhammad Azhar; Ahmad, Mukhtar; Nazir, M. S.; Imran, M.; Ali, A.; Sattar, A.; Murtaza, G.

2017-01-01

The influence of Cu substitution on the structural and morphological characteristics of Ni-Zn nanocrystalline ferrites have been discussed in this work. The detailed and systematic magnetic characterizations were also done for Cu substituted Ni-Zn nanoferrites. The nanocrystalline ferrites of Cu substituted CuxZn0.5-xNi0.5Fe2O4 ferrites (x=0, 0.1, 0.2, 0.3, 0.4 and 0.5) were synthesized using sol gel self-combustion hybrid method. X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Transmission electron microscope (TEM) and Vibrating sample magnetometer (VSM) were used to investigate the properties of Cu substituted nanocrystalline ferrites. Single phase structure of Cu substituted in Ni-Zn nanocrystalline ferrites were investigated for all the samples. Crystallite size, lattice constant and volume of the cell were found to increase by increasing Cu contents in spinel structure. The better morphology with well-organized nanocrystals of Cu-Zn-Ni ferrites at x=0 and 0.5 were observed from both FESEM and TEM analysis. The average grain size was 35-46 nm for all prepared nanocrystalline samples. Magnetic properties such as coercivity, saturation, remanence, magnetic squareness, magneto crystalline anisotropy constant (K) and Bohr magneton were measured from the recorded M-H loops. The magnetic saturation and remanence were increased by the incorporation of Cu contents. However, coercivity follow the Stoner-Wolforth model except for x=0.3 which may be due to the site occupancy and replacement of Cu contents from octahedral site. The squareness ratio confirmed the super paramgnetic behaviour of the Cu substituted in Ni-Zn nanocrystalline ferrites. Furthermore, Cu substituted Ni-Zn nanocrystalline ferrites may be suitable for many industrial and domestic applications such as components of transformers, core, switching, and MLCI's due to variety of the soft magnetic characteristics.

Effect of fulvic and humic acids on copper and zinc homeostasis in rats.

PubMed

Hullár, István; Vucskits, András Valentin; Berta, Erzsébet; Andrásofszky, Emese; Bersényi, András; Szabó, József

2018-03-01

The objective of this study was to investigate the effects of fulvic acid (FA) and humic acid (HA), the two main compounds of humic substances (HSs), on copper (Cu) and zinc (Zn) homeostasis. Seventy-two male Wistar rats were randomly divided into nine experimental groups. The control diet (AIN-93G formula) and the diets supplemented with 0.1%, 0.2%, 0.4% and 0.8% FA or HA were fed for 26 days. Cu and Zn concentrations of the large intestinal content (LIC), liver, kidney, femur and hair were determined. FA and HA did not influence significantly the Cu or Zn contents of the experimental diets, the rats' feed intake, weight gain and the feed to gain ratio. Both FA and HA decreased the Cu concentrations of the LIC significantly and in a dose-related manner; however the absorption-stimulating effect of HA was more pronounced. FA increased the Cu content of the liver, but neither FA nor HA had a dose-dependent effect on it. FA or HA supplementations had no significant effect on the Cu concentration of the kidney. At the concentrations used, dietary FA or HA supplementations are not promising growth promoters. FA influences the Cu homeostasis unlike HA, because FA not only stimulates Cu absorption, but the extra quantity of absorbed Cu is retained in the organism. The stimulatory effect of HA on Zn absorption may not be manifested in Cu and Zn homeostasis, because of the tight connection of these microelements to FA and HA, which prevents the transmission of Zn from the ZnHA complex to the organs. As regards the effect of FA and HA on Cu and Zn homeostasis, both FA and HA stimulated the absorption of these microelements, but only FA increased the retention of Cu (in the liver) and Zn (in the kidney).

Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, H. F.; Chua, S. J.; Hu, G. X.

2007-10-15

X-ray diffractions, Nomarski microscopy, scanning electron microscopy, and photoluminescence have been used to study the effects of substrate on the structure and orientation of ZnO thin films grown by rf-magnetron sputtering. GaAs(001), GaAs(111), Al{sub 2}O{sub 3}(0002) (c-plane), and Al{sub 2}O{sub 3}(1102) (r-plane) wafers have been selected as substrates in this study. X-ray diffractions reveal that the ZnO film grown on GaAs(001) substrate is purely textured with a high c-axis orientation while that grown on GaAs(111) substrate is a single ZnO(0002) crystal; a polycrystalline structure with a large-single-crystal area of ZnO(0002) is obtained on a c-plane Al{sub 2}O{sub 3} substrate whilemore » a ZnO(1120) single crystal is formed on an r-plane Al{sub 2}O{sub 3} substrate. There is absence of significant difference between the photoluminescence spectra collected from ZnO/GaAs(001), ZnO/GaAs(111), and ZnO/Al{sub 2}O{sub 3}(0002), while the photoluminescence from ZnO/Al{sub 2}O{sub 3}(1102) shows a reduced intensity together with an increased linewidth, which is, likely, due to the increased incorporation of native defects during the growth of ZnO(1120)« less

The function of an In0.17Al0.83N interlayer in n-ZnO/In0.17Al0.83N/p-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Wang, Xiao; Gan, Xuewei; Zhang, Guozhen; Su, Xi; Zheng, Meijuan; Ai, Zhiwei; Wu, Hao; Liu, Chang

2017-01-01

ZnO thin films were deposited on p-type GaN with a thin In0.17Al0.83N interlayer, forming double heterostructural diodes of n-ZnO/In0.17Al0.83N/p-GaN. The crystalline quality of the ZnO films was improved and its orientation was kept along < 70 7 bar 4 > that was perpendicular to (10 1 bar 1) plane. The reverse leakage current was reduced by introducing the In0.17Al0.83N interlayer. The electroluminescence spectra of the n-ZnO/In0.17Al0.83N/p-GaN heterojunctions were dominated by p-GaN emissions under forward biases and n-ZnO emissions under reverse biases. The valence-band offset and conduction-band offset between the ZnO and In0.17Al0.83N were determined to be -0.72 and 1.95 eV, respectively.

Microstructure and mechanical characteristics of gradient structured Cu and Cu alloys processed by surface mechanical attrition treatment

NASA Astrophysics Data System (ADS)

Hu, XZ; Cheng, LP; Chen, HL; Yin, Z.; Zhang, Z.; Shu, BP; Gong, YL; Zhu, XK

2017-05-01

Cu-Al-Zn alloys with different stacking fault energy (SFE) were processed by surface mechanical attrition treatment (SMAT) at cryogenic temperature (CT), mechanical properties of gradient structured Cu-Al-Zn alloys were investigated in this study. Al and Zn content in alloys, which result in the decrease of SFE, can contribute to the increase in strength. Cu-4.5wt%Al-14.3wt%Zn alloy with the lower SFE shows that the strength increased, the ductility did not decrease significantly with increasing processing time, and the strength can be improved by a thicker gradient structure (GS) layer. The better combination of strength and ductility was achieved in Cu-4.5wt%Al-14.3wt%Zn alloy with lower SFE.

Zn and Cu isotopes as tracers of anthropogenic contamination in a sediment core from an urban lake

USGS Publications Warehouse

Thapalia, Anita; Borrok, David M.; Van Metre, Peter C.; Musgrove, MaryLynn; Landa, Edward R.

2010-01-01

In this work, we use stable Zn and Cu isotopes to identify the sources and timing of the deposition of these metals in a sediment core from Lake Ballinger near Seattle, Washington, USA. The base of the Lake Ballinger core predates settlement in the region, while the upper sections record the effects of atmospheric emissions from a nearby smelter and rapid urbanization of the watershed. δ66Zn and δ65Cu varied by 0.50‰ and 0.29‰, respectively, over the 500 year core record. Isotopic changes were correlated with the presmelter period (∼1450 to 1900 with δ66Zn = +0.39‰ ± 0.09‰ and δ65Cu = +0.77‰ ± 0.06‰), period of smelter operation (1900 to 1985 with δ66Zn = +0.14 ± 0.06‰ and δ65Cu = +0.94 ± 0.10‰), and postsmelting/stable urban land use period (post 1985 with δ66Zn = 0.00 ± 0.10‰ and δ65Cu = +0.82‰ ± 0.12‰). Rapid early urbanization during the post World War II era increased metal loading to the lake but did not significantly alter the δ66Zn and δ65Cu, suggesting that increased metal loads during this time were derived mainly from mobilization of historically contaminated soils. Urban sources of Cu and Zn were dominant since the smelter closed in the 1980s, and the δ66Zn measured in tire samples suggests tire wear is a likely source of Zn.

Understanding the Cu-Zn brass alloys using a short-range-order cluster model: significance of specific compositions of industrial alloys

PubMed Central

Hong, H. L.; Wang, Q.; Dong, C.; Liaw, Peter K.

2014-01-01

Metallic alloys show complex chemistries that are not yet understood so far. It has been widely accepted that behind the composition selection lies a short-range-order mechanism for solid solutions. The present paper addresses this fundamental question by examining the face-centered-cubic Cu-Zn α-brasses. A new structural approach, the cluster-plus-glue-atom model, is introduced, which suits specifically for the description of short-range-order structures in disordered systems. Two types of formulas are pointed out, [Zn-Cu12]Zn1~6 and [Zn-Cu12](Zn,Cu)6, which explain the α-brasses listed in the American Society for Testing and Materials (ASTM) specifications. In these formulas, the bracketed parts represent the 1st-neighbor cluster, and each cluster is matched with one to six 2nd-neighbor Zn atoms or with six mixed (Zn,Cu) atoms. Such a cluster-based formulism describes the 1st- and 2nd-neighbor local atomic units where the solute and solvent interactions are ideally satisfied. The Cu-Ni industrial alloys are also explained, thus proving the universality of the cluster-formula approach in understanding the alloy selections. The revelation of the composition formulas for the Cu-(Zn,Ni) industrial alloys points to the common existence of simple composition rules behind seemingly complex chemistries of industrial alloys, thus offering a fundamental and practical method towards composition interpretations of all kinds of alloys. PMID:25399835

Understanding the Cu-Zn brass alloys using a short-range-order cluster model: Significance of specific compositions of industrial alloys

DOE PAGES

Hong, H. L.; Wang, Q.; Dong, C.; ...

2014-11-17

Metallic alloys show complex chemistries that are not yet understood so far. It has been widely accepted that behind the composition selection lies a short-range-order mechanism for solid solutions. The present paper addresses this fundamental question by examining the face-centered-cubic Cu-Zn α-brasses. A new structural approach, the cluster-plus-glue-atom model, is introduced, which suits specifically for the description of short-range-order structures in disordered systems. Two types of formulas are pointed out, [Zn-Cu 12]Zn 1~6 and [Zn-Cu 12](Zn,Cu) 6, which explain the α-brasses listed in the American Society for Testing and Materials (ASTM) specifications. In these formulas, the bracketed parts represent themore » 1 st-neighbor cluster, and each cluster is matched with one to six 2 nd-neighbor Zn atoms or with six mixed (Zn,Cu) atoms. Such a cluster-based formulism describes the 1 st- and 2 nd-neighbor local atomic units where the solute and solvent interactions are ideally satisfied. The Cu-Ni industrial alloys are also explained, thus proving the universality of the cluster-formula approach in understanding the alloy selections. As a result, the revelation of the composition formulas for the Cu-(Zn,Ni) industrial alloys points to the common existence of simple composition rules behind seemingly complex chemistries of industrial alloys, thus offering a fundamental and practical method towards composition interpretations of all kinds of alloys.« less

Controlling superstructural ordering in the clathrate-I Ba 8 M 16 P 30 (M = Cu, Zn) through the formation of metal–metal bonds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dolyniuk, J.; Whitfield, P. S.; Lee, K.

2017-01-01

Order–disorder–order phase transitions in the clathrate-I Ba8Cu16P30 were induced and controlled by aliovalent substitutions of Zn into the framework. Unaltered Ba8Cu16P30 crystallizes in an ordered orthorhombic (Pbcn) clathrate-I superstructure that maintains complete segregation of metal and phosphorus atoms over 23 different crystallographic positions in the clathrate framework. The driving force for the formation of this Pbcn superstructure is the avoidance of Cu–Cu bonds. This superstructure is preserved upon aliovalent substitution of Zn for Cu in Ba8Cu16-xZnxP30 with 0 < x < 1.6 (10% Zn/Mtotal), but vanishes at greater substitution concentrations. Higher Zn concentrations (up to 35% Zn/Mtotal) resulted in themore » additional substitution of Zn for P in Ba8M16+yP30-y (M = Cu, Zn) with 0 ≤ y ≤ 1. This causes the formation of Cu–Zn bonds in the framework, leading to a collapse of the orthorhombic superstructure into the more common cubic subcell of clathrate-I (Pm[3 with combining macron]n). In the resulting cubic phases, each clathrate framework position is jointly occupied by three different elements: Cu, Zn, and P. Detailed structural characterization of the Ba–Cu–Zn–P clathrates-I via single crystal X-ray diffraction, joint synchrotron X-ray and neutron powder diffractions, pair distribution function analysis, electron diffraction and high-resolution electron microscopy, along with elemental analysis, indicates that local ordering is present in the cubic clathrate framework, suggesting the evolution of Cu–Zn bonds. For the compounds with the highest Zn content, a disorder–order transformation is detected due to the formation of another superstructure with trigonal symmetry and Cu–Zn bonds in the clathrate-I framework. It is shown that small changes in the composition, synthesis, and crystal structure have significant impacts on the structural and transport properties of Zn-substituted Ba8Cu16P30.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iyer, Abishek K.; Rudyk, Brent W.; Lin, Xinsong

The quaternary rare-earth chalcogenides RE{sub 3}CuGaS{sub 7} and RE{sub 3}CuGaSe{sub 7} (RE=La–Nd) have been prepared by reactions of the elements at 1050 °C and 900 °C, respectively. They crystallize in the noncentrosymmetric La{sub 3}CuSiS{sub 7}-type structure (hexagonal, space group P6{sub 3}, Z=2) in which the a-parameter is largely controlled by the RE component (a=10.0–10.3 Å for the sulfides and 10.3–10.6 Å for the selenides) whereas the c-parameter is essentially fixed by the choice of Ga and chalcogen atoms within tetrahedral units (c=6.1 Å for the sulfides and 6.4 Å for the selenides). They extend the series RE{sub 3}MGaCh{sub 7}, previouslymore » known for divalent metal atoms (M=Mn–Ni), differing in that the Cu atoms in RE{sub 3}CuGaCh{sub 7} occupy trigonal planar sites instead of octahedral sites. Among quaternary chalcogenides RE{sub 3}MM′Ch{sub 7}, the combination of monovalent (M=Cu) and trivalent (M′=Ga) metals is unusual because it appears to violate the condition of charge balance satisfied by most La{sub 3}CuSiS{sub 7}-type compounds. The possibility of divalent Cu atoms was ruled out by bond valence sum analysis, magnetic measurements, and X-ray photoelectron spectroscopy. The electron deficiency in RE{sub 3}CuGaCh{sub 7} is accommodated through S-based holes at the top of the valence band, as shown by band structure calculations on La{sub 3}CuGaS{sub 7}. An optical band gap of about 2.0 eV was found for La{sub 3}CuGaSe{sub 7}. - Graphical abstract: The chalcogenides RE{sub 3}CuGaCh{sub 7} contain monovalent Cu in trigonal planes and trivalent Ga in tetrahedra; they are electron-deficient representatives of La{sub 3}CuSiS{sub 7}-type compounds, which normally satisfy charge balance. - Highlights: • Quaternary chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se) were prepared. • Bond valence sums, magnetism, and XPS data give evidence for monovalent Cu. • Crystal structures reveal high anisotropy of Cu displacement. • Electron deficiency is accommodated by S-based holes in valence band.« less

Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

NASA Astrophysics Data System (ADS)

Pantzas, K.; Rogers, D. J.; Bove, P.; Sandana, V. E.; Teherani, F. H.; El Gmili, Y.; Molinari, M.; Patriarche, G.; Largeau, L.; Mauguin, O.; Suresh, S.; Voss, P. L.; Razeghi, M.; Ougazzaden, A.

2016-02-01

p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.

Refractive indices of layers and optical simulations of Cu(In,Ga)Se2 solar cells

PubMed Central

Avancini, Enrico; Losio, Paolo A.; Figi, Renato; Schreiner, Claudia; Bürki, Melanie; Bourgeois, Emilie; Remes, Zdenek; Nesladek, Milos; Tiwari, Ayodhya N.

2018-01-01

Abstract Cu(In,Ga)Se2 based solar cells have reached efficiencies close to 23%. Further knowledge-driven improvements require accurate determination of the material properties. Here, we present refractive indices for all layers in Cu(In,Ga)Se2 solar cells with high efficiency. The optical bandgap of Cu(In,Ga)Se2 does not depend on the Cu content in the explored composition range, while the absorption coefficient value is primarily determined by the Cu content. An expression for the absorption spectrum is proposed, with Ga and Cu compositions as parameters. This set of parameters allows accurate device simulations to understand remaining absorption and carrier collection losses and develop strategies to improve performances. PMID:29785230

Fiber-fed time-resolved photoluminescence for reduced process feedback time on thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Repins, I. L.; Egaas, B.; Mansfield, L. M.

2015-01-15

Fiber-fed time-resolved photoluminescence is demonstrated as a tool for immediate process feedback after deposition of the absorber layer for CuIn{sub x}Ga{sub 1-x}Se{sub 2} and Cu{sub 2}ZnSnSe{sub 4} photovoltaic devices. The technique uses a simplified configuration compared to typical laboratory time-resolved photoluminescence in the delivery of the exciting beam, signal collection, and electronic components. Correlation of instrument output with completed device efficiency is demonstrated over a large sample set. The extraction of the instrument figure of merit, depending on both the initial luminescence intensity and its time decay, is explained and justified. Limitations in the prediction of device efficiency by thismore » method, including surface effect, are demonstrated and discussed.« less

Simultaneous growth of pure hyperbranched Zn3As2 structures and long Ga2O3 nanowires.

PubMed

Li, Jianye; Wang, Lung-Shen; Buchholz, D Bruce; Chang, Robert P H

2009-05-01

Through a facile and highly repeatable chemical vapor method, pure three-dimensional hyperbranched Zn(3)As(2) structures and ultralong Ga(2)O(3) nanowires were simultaneously grown with controllable locations in the same experiment. The hyperbranched Zn(3)As(2) consists of cone-shaped submicro-/nanowires and has a single-crystalline tetragonal structure. This is the first report of nano Zn(3)As(2) and hyperbranched Zn(3)As(2) structures. The as-grown Ga(2)O(3) nanowires are monoclinic single crystals. A vapor-solid-solid mechanism is suggested for the growth of the Ga(2)O(3) nanowires, and a vapor-solid mechanism, for the Zn(3)As(2) structures.

Assessment of the labile fractions of copper and zinc in marinas and port areas in Southern Brazil.

PubMed

Costa, Luiza Dy Fonseca; Wallner-Kersanach, Mônica

2013-08-01

The dissolved labile and labile particulate fractions (LPF) of Cu and Zn were analyzed during different seasons and salinity conditions in estuarine waters of marina, port, and shipyard areas in the southern region of the Patos Lagoon (RS, Brazil). The dissolved labile concentration was determined using the diffusive gradients in thin films technique (DGT). DGT devices were deployed in seven locations of the estuary for 72 h and the physicochemical parameters were also measured. The LPF of Cu and Zn was determined by daily filtering of water samples. Seasonal variation of DGT-Cu concentrations was only significant (p < 0.05) at one shipyard area, while DGT-Zn was significant (p < 0.05) in every locations. The LPF of Cu and Zn concentrations demonstrated seasonal and spatial variability in all locations, mainly at shipyard areas during high salinity conditions. In general, except the control location, the sampling locations showed mean variations of 0.11-0.45 μg L(-1) for DGT-Cu, 0.89-9.96 μg L(-1) for DGT-Zn, 0.65-3.69 μg g(-1) for LPF-Cu, and 1.35-10.87 μg g(-1) for LPF-Zn. Shipyard areas demonstrated the most expressive values of labile Cu and Zn in both fractions. Strong relationship between DGT-Zn and LPF-Zn was found suggesting that the DGT-Zn fraction originates from the suspended particulate matter. Water salinity and suspended particulate matter content indicated their importance for the control of the labile concentrations of Cu and Zn in the water column. These parameters must be taken into consideration for comparison among labile metals in estuaries.

Optimization of operating parameters for gas-phase photocatalytic splitting of H2S by novel vermiculate packed tubular reactor.

PubMed

Preethi, V; Kanmani, S

2016-10-01

Hydrogen production by gas-phase photocatalytic splitting of Hydrogen Sulphide (H2S) was investigated on four semiconductor photocatalysts including CuGa1.6Fe0.4O2, ZnFe2O3, (CdS + ZnS)/Fe2O3 and Ce/TiO2. The CdS and ZnS coated core shell particles (CdS + ZnS)/Fe2O3 shows the highest rate of hydrogen (H2) production under optimized conditions. Packed bed tubular reactor was used to study the performance of prepared photocatalysts. Selection of the best packing material is a key for maximum removal efficiency. Cheap, lightweight and easily adsorbing vermiculate materials were used as a novel packing material and were found to be effective in splitting H2S. Effect of various operating parameters like flow rate, sulphide concentration, catalyst dosage, light irradiation were tested and optimized for maximum H2 conversion of 92% from industrial waste H2S. Copyright © 2016 Elsevier Ltd. All rights reserved.

H2 gas sensing properties of a ZnO/CuO and ZnO/CuO/Cu2O Heterostructures

NASA Astrophysics Data System (ADS)

Ababii, N.; Postica, V.; Hoppe, M.; Adelung, R.; Lupan, O.; Railean, S.; Pauporté, T.; Viana, B.

2017-03-01

The most important parameters of gas sensors are sensitivity and especially high selectivity to specific chemical species. To improve these parameters we developed sensor structures based on layered semiconducting oxides, namely CuO/Cu2O, CuO:Zn/Cu2O:Zn, NiO/ZnO. In this work, the ZnO/CuxO (where x = 1, 2) bi-layer heterostructure were grown via a simple synthesis from chemical solution (SCS) at relatively low temperatures (< 95 °C), representing a combination of layered n-type and p-type semiconducting oxides which are widely used as sensing material for gas sensors. The main advantages of the developed device structures are given by simplicity of the synthesis and technological cost-efficiency. Structural investigations showed high crystallinity of synthesized layers confirming the presence of zinc oxide nanostructures on the surface of the copper oxide film deposited on glass substrate. Structural changes in morphology of grown nanostructures induced by post-grown thermal annealing were observed by scanning electron microscopy (SEM) investigations, and were studied in detail. The influence of thermal annealing type on the optical properties was also investigated. As an example of practical applications, the ZnO/CuxO bi-layer heterojunctions and ZnO/CuO/Cu2O three-layered structures were integrated into sensor structures and were tested to different types of reducing gases at different operating temperatures (OPT), showing promising results for fabrication of selective gas sensors.

Electronic Structure and Optical Properties of Cu2ZnGeSe4 : First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

NASA Astrophysics Data System (ADS)

Choi, S. G.; Park, J.-S.; Donohue, A. L.; Christensen, S. T.; To, B.; Beall, C.; Wei, S.-H.; Repins, I. L.

2015-11-01

Cu2ZnGeSe4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric function ɛ =ɛ1+i ɛ2 spectrum of polycrystalline Cu2ZnGeSe4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peak shapes and relative intensities between experimental spectra and the calculated ɛ data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. The complex refractive index N =n +i k , normal-incidence reflectivity R , and absorption coefficients α are calculated from the modeled ɛ spectrum, which are also compared with those of Cu2ZnSnSe4 . The spectral features for Cu2ZnGeSe4 appear to be weaker and broader than those for Cu2ZnSnSe4 , which is possibly due to more structural imperfections presented in Cu2ZnGeSe4 than Cu2ZnSnSe4 .

Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

NASA Astrophysics Data System (ADS)

Yang, Y. C.; Pan, F.; Zeng, F.; Liu, M.

2009-12-01

ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher Roff/Ron ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.

Efficiencies of Eu{sup 3+} ions and hydrogen atoms as donors in ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akazawa, Housei, E-mail: akazawa.housei@lab.ntt.co.jp

2016-09-15

The donor efficiencies of Eu{sup 3+} ions and hydrogen atoms in ZnO crystalline films were investigated with reference to that of Ga{sup 3+} ions. It was found that Eu{sup 3+} ions acted as extrinsic donors in ZnO:Eu films, yielding a resistivity of 1.8 × 10{sup −3} Ω cm at a doping level of 1 at. %. This value is comparable to one for intrinsic donors in undoped ZnO films. The conductivity was maintained as the deposition temperature was increased to 200 °C, and this is evidence for the contribution of extrinsic donors. Deposition of Ga-doped and Eu-doped ZnO films in an H{sub 2}O gasmore » flow produced oxyhydrogenated ZnO:(Ga, H) and ZnO:(Eu, H) films in which the Ga{sup 3+} and Eu{sup 3+} donors were deactivated by oxidization. Nevertheless, hydrogen donors contributed to electrical conduction yielding a resistivity of 1 × 10{sup −2} Ω cm. Postannealing in an H{sub 2} gas ambient alleviated the excessive oxidization of the films and thereby reactivated the donor action of Ga{sup 3+} and Eu{sup 3+} ions, causing the resistivity to recover to 10{sup −3} Ω cm for ZnO:(Ga, H) and 10{sup −2} Ω cm for ZnO:(Eu, H). In contrast, vacuum annealing of ZnO:(Ga, H) and ZnO:(Eu, H) films increased resistivity through removal of hydrogen donors while not affecting the oxidized condition of the samples.« less

Study of Cu-Al-Ni-Ga as high-temperature shape memory alloys

NASA Astrophysics Data System (ADS)

Zhang, Xin; Wang, Qian; Zhao, Xu; Wang, Fang; Liu, Qingsuo

2018-03-01

The effect of Ga element on the microstructure, mechanical properties and shape memory effect of Cu-13.0Al-4.0Ni- xGa (wt%) high-temperature shape memory alloy was investigated by optical microscopy, SEM, XRD and compression test. The microstructure observation results showed that the Cu-13.0Al-4.0Ni- xGa ( x = 0.5 and 1.0) alloys displayed dual-phase morphology which consisted of 18R martensite and (Al, Ga)Cu phase, and their grain size was about several hundred microns, smaller than that of Cu-13.0Al-4.0Ni alloy. The compression test results proved that the mechanical properties of Cu-13.0Al-4.0Ni- xGa alloys were improved by addition of Ga element owing to the grain refinement and solid solution strengthening, and the compressive fracture strains were 11.5% for x = 0.5 and 14.9% for x = 1.0, respectively. When the pre-strain was 8%, the shape memory effect of 4.2 and 4.6% were obtained for Cu-13.0Al-4.0Ni-0.5 Ga and Cu-13.0Al-4.0Ni-1.0 Ga alloys after being heated to 400 °C for 1 min.

Fast photocatalytic degradation of sulforhodamine B using ZnO:Cu nanorods

NASA Astrophysics Data System (ADS)

Raji, R.; Gopchandran, K. G.

2018-02-01

In this work, ZnO:Cu nanorods with tunable Cu content were successfully synthesized via co-precipitation method and investigations were made on the use of these nanorods as photocatalyst by observing the photodegradation of a representative dye pollutant of sulforhodamine B (SRB) under sunlight. The X-ray diffraction analysis and high resolution transmission electron microscopy showed that ZnO:Cu nanorods possess wurtzite phase with preferential growth along (101) plane. The formation of additional defect levels in these nanorods on doping with Cu and its dependence on the concentration of Cu were studied using photoluminescence and X-ray photoelectron spectroscopy. ZnO:Cu nanorods results in faster degradation of dye as compared to the undoped ZnO and is found that Cu doping enhances the photodegradation activity significantly and is highly sensitive to Cu doping level. The fast photocatalytic degradation is attributed to the fact that Cu ions promote the interfacial charge transfer and favors the effective charge separation of photogenerated electrons and holes generated during sunlight irradiation, increasing the rate of production of reactive oxygen species needed for the degradation of the dye. The chemical oxygen demand analysis of the dye solution after sunlight irradiation indicates that rate of mineralization is slower than the decoloration. The possible mechanism for degradation of dye under sunlight irradiation is described with a schematic. Additionally, the photostability of the ZnO:Cu nanorods was also tested through three repetitive cycles. This work suggest that the prepared ZnO:Cu nanorods are suitable for cost-effective water purification.

Phytoremediation potential of Miscanthus × giganteus and Spartina pectinata in soil contaminated with heavy metals.

PubMed

Korzeniowska, Jolanta; Stanislawska-Glubiak, Ewa

2015-08-01

The aim of this work was to assess the suitability of Miscanthus × giganteus and Spartina pectinata link to Cu, Ni, and Zn phytoremediation. A 2-year microplot experiment with the tested grasses growing on metal-contaminated soil was carried out. Microplots with cement borders, measuring 1 × 1 × 1m, were filled with Haplic Luvisols soil. Simulated soil contamination with Cu, Ni, and Zn was introduced in the following doses in mg kg(-1): 0-no metals, Cu1-100, Cu2-200, Cu3-400, Ni1-60, Ni2-100, Ni3-240, Zn1-300, Zn2-600, and Zn3-1200. The phytoremediation potential of grasses was evaluated using a tolerance index (TI), bioaccumulation factor (BF), bioconcentration factor (BCF), and translocation factor (TF). S. pectinata showed a higher tolerance to soil contamination with Cu, Ni, and Zn compared to M. × giganteus. S. pectinata was found to have a high suitability for phytostabilization of Zn and lower suitability of Cu and Ni. M. × giganteus had a lower phytostabilization potential than S. pectinata. The suitability of both grasses for Zn phytoextraction depended on the age of the plants. Both grasses were not suitable for Cu and Ni phytoextraction. The research showed that one-season studies were not valuable for fully assessing the phytoremediation potential of perennial plants.

Color tunable light-emitting diodes based on p+-Si/p-CuAlO2/n-ZnO nanorod array heterojunctions

NASA Astrophysics Data System (ADS)

Ling, Bo; Zhao, Jun Liang; Sun, Xiao Wei; Tan, Swee Tiam; Kyaw, Aung Ko Ko; Divayana, Yoga; Dong, Zhi Li

2010-07-01

Wide-range color tuning from red to blue was achieved in phosphor-free p+-Si/p-CuAlO2/n-ZnO nanorod light-emitting diodes at room temperature. CuAlO2 films were deposited on p+-Si substrates by sputtering followed by annealing. ZnO nanorods were further grown on the annealed p+-Si/p-CuAlO2 substrates by vapor phase transport. The color of the p-CuAlO2/n-ZnO nanorod array heterojunction electroluminescence depended on the annealing temperature of the CuAlO2 film. With the increase of the annealing temperature from 900 to 1050 °C, the emission showed a blueshift under the same forward bias. The origin of the blueshift is related to the amount of Cu concentration diffused into ZnO.

Inhibition of growth of S. epidermidis by hydrothermally synthesized ZnO nanoplates

NASA Astrophysics Data System (ADS)

Abinaya, C.; Mayandi, J.; Osborne, J.; Frost, M.; Ekstrum, C.; Pearce, J. M.

2017-07-01

The antibacterial effect of zinc oxide (ZnO#1) as prepared and annealed (ZnO#2) at 400 °C, Cu doped ZnO (CuZnO), and Ag doped ZnO (AgZnO) nanoplates on Staphylococcus epidermidis was investigated for the inhibition and inactivation of cell growth. The results shows that pure ZnO and doped ZnO samples exhibited antibacterial activity against Staphylococcus epidermidis (S. epidermidis) as compared to tryptic soy broth (TSB). Also it is observed that S. epidermidis was extremely sensitive to treatment with ZnO nanoplates and it is clear that the effect is not purely depend on Cu/Ag. Phase identification of a crystalline material and unit cell dimensions were studied by x-ray powder diffraction (XRD). The scanning electron microscopy (SEM) provides information on sample’s surface topography and the EDX confirms the presence of Zn, O, Cu and Ag. X-ray photo-electron spectroscopy (XPS) was used to analyze the elemental composition and electronic state of the elements that exist within the samples. These studies confirms the formation of nanoplates and the presence of Zn, O, Ag, Cu with the oxidation states  +2, -2, 0 and  +2 respectively. These results indicates promising antibacterial applications of these ZnO-based nanoparticles synthesized with low-cost hydrothermal methods.

Serum copper and zinc concentrations in a representative sample of the Canarian population.

PubMed

Díaz Romero, Carlos; Henríquez Sánchez, Patricia; López Blanco, Félix; Rodríguez Rodríguez, Elena; Serra Majem, Lluis

2002-01-01

Serum copper (Cu) and zinc (Zn) concentrations of 395 individuals (187 males + 208 females) living in Canary Islands were determined by flame atomic absorption spectrometry. The mean copper and zinc concentrations were 1.10 +/- 0.25 mg/L and 1.16 +/- 0.52 mg/L respectively. Our data were similar to other data published in other Spanish regions. Individuals from Lanzarote presented a mean Cu and Zn concentrations higher (p < 0.05) than individuals from the rest of islands; Individuals from EL Hierro showed the lowest (p < 0.05) mean Zn concentration. These differences could be attributed a differences in Cu and Zn contents of soil and/or differences in dietary habits of the populations. The mean serum Cu concentration in females was higher (p < 0.05) than in males, however serum Zn concentration did not vary with the sex of the subjects. No relation to socio-economic status and educational level were found with respect to the serum Cu and Zn concentrations. The serum Cu concentration varied with age of individuals, observing the highest (p < 0.05) Cu concentration in the 20-30 year old interval. A higher serum Cu concentration in females within 20-30 year old interval was observed. This could be due to a higher use of oral contraceptives or to the higher number of pregnancies. Boys (younger than 15) showed a decrease (p < 0.05) of the serum Cu concentration with age. The mean Zn concentrations in serum did not change (p > 0.05) among the different age intervals. No clear trends in the serum Cu and Zn concentrations were observed when drinking and smoking habits were considered. The increase of physical exercise reduced (p < 0.05) the serum Cu concentrations.

Enhanced photoluminescence property and broad color emission of ZnGa2O4 phosphor due to the synergistic role of Eu3+ and carbon dots

NASA Astrophysics Data System (ADS)

Huo, Qiuyue; Tu, Weixia; Guo, Lin

2017-10-01

ZnGa2O4 phosphors co-composited with nanoscale carbon dots (CDs) and Eu3+ were presented for the tunable color emission. Novel single phase CDs or/and Eu3+ composited ZnGa2O4 phosphors were synthesized by microwave hydrothermal method and their optical properties were investigated. The ZnGa2O4 phosphors composited with CDs exhibited an intense broad blue light emission at 421 nm and a more enhanced photoluminescence intensity than those without CDs. The Eu3+ composited ZnGa2O4 phosphors gave an ideal red color emission. The CDs/Eu3+ co-composited ZnGa2O4 phosphors exhibited a wide emission band peak at 450 nm and narrow emission peak at 618 nm. Furthermore, the tunable color emissions of CDs/Eu3+ co-composited ZnGa2O4 phosphors from blue to the white light region, and then to red were obtained with the increasing Eu3+ concentration, which can be a promising single phased phosphor candidate in light emitting diodes. Broadly tunable emission single phased phosphor is tuned firstly through the synergistic role of the non-metal element and the rare earth metal ions.

Rational design and synthesis of yolk-shell ZnGa2O4@C nanostructure with enhanced lithium storage properties

NASA Astrophysics Data System (ADS)

Han, Nao; Xia, Yuguo; Han, Yanyang; Jiao, Xiuling; Chen, Dairong

2018-03-01

The ability to create hybrid nanostructure with synergistic effect and confined morphology to achieve high performance and long-term stability is high desirable in lithium ion batteries. Although transition metal oxides as anode material reveal high theoretical capacities, the significant volume changes during repeated lithium insertion and extraction cause pulverization of electrode materials, resulting in rapid fade in capacity. Herein, yolk-shell nanostructure of ZnGa2O4 encapsulated by amorphous carbon is rationally designed and synthesized through two-step surface coating followed by thermal treatment and etching process. It is noteworthy that ZnGa2O4@C with yolk-shell structure is superior to pristine ZnGa2O4 and ZnGa2O4@C with core-shell structure in term of lithium storage. The stable reversible capacity of yolk-shell ZnGa2O4@C can be retained at 657.2 mAh g-1 at current density of 1 A g-1 after completion of 300 cycles, which also reveals superior rate performance. The appropriate carbon shell and void space involved in the yolk-shell structure are considered to be the crucial factor in accommodating volume expansion as well as preserving the structural integrity of yolk-shell ZnGa2O4@C.

Study on room temperature gas-sensing performance of CuO film-decorated ordered porous ZnO composite by In2O3 sensitization

PubMed Central

Li, Tian-tian; Bao, Na; Geng, Ai-fang; Yang, Ying; Dong, Xiang-ting

2018-01-01

For the first time, ordered mesoporous ZnO nanoparticles have been synthesized by a template method. The electroplating after chemical plating method was creatively used to form copper film on the surface of the prepared ZnO, and then a CuO film-decorated ordered porous ZnO composite (CuO/ZnO) was obtained by a high-temperature oxidation method. In2O3 was loaded into the prepared CuO film–ZnO by an ultrasonic-assisted method to sensitize the room temperature gas-sensing performance of the prepared CuO/ZnO materials. The doped In2O3 could effectively improve the gas-sensing properties of the prepared materials to nitrogen oxides (NOx) at room temperature. The 1% In2O3 doped CuO/ZnO sample (1 wt% In2O3–CuO/ZnO) showed the best gas-sensing properties whose response to 100 ppm NOx reached 82%, and the detectable minimum concentration reached 1 ppm at room temperature. The prepared materials had a good selectivity, better response, very low detection limit, and high sensitivity to NOx gas at room temperature, which would have a great development space in the gas sensor field and a great research value. PMID:29515887

Noncentrosymmetric rare-earth copper gallium chalcogenides RE3CuGaCh7 (RE=La-Nd; Ch=S, Se): An unexpected combination

NASA Astrophysics Data System (ADS)

Iyer, Abishek K.; Rudyk, Brent W.; Lin, Xinsong; Singh, Harpreet; Sharma, Arzoo Z.; Wiebe, Christopher R.; Mar, Arthur

2015-09-01

The quaternary rare-earth chalcogenides RE3CuGaS7 and RE3CuGaSe7 (RE=La-Nd) have been prepared by reactions of the elements at 1050 °C and 900 °C, respectively. They crystallize in the noncentrosymmetric La3CuSiS7-type structure (hexagonal, space group P63, Z=2) in which the a-parameter is largely controlled by the RE component (a=10.0-10.3 Å for the sulfides and 10.3-10.6 Å for the selenides) whereas the c-parameter is essentially fixed by the choice of Ga and chalcogen atoms within tetrahedral units (c=6.1 Å for the sulfides and 6.4 Å for the selenides). They extend the series RE3MGaCh7, previously known for divalent metal atoms (M=Mn-Ni), differing in that the Cu atoms in RE3CuGaCh7 occupy trigonal planar sites instead of octahedral sites. Among quaternary chalcogenides RE3MM‧Ch7, the combination of monovalent (M=Cu) and trivalent (M‧=Ga) metals is unusual because it appears to violate the condition of charge balance satisfied by most La3CuSiS7-type compounds. The possibility of divalent Cu atoms was ruled out by bond valence sum analysis, magnetic measurements, and X-ray photoelectron spectroscopy. The electron deficiency in RE3CuGaCh7 is accommodated through S-based holes at the top of the valence band, as shown by band structure calculations on La3CuGaS7. An optical band gap of about 2.0 eV was found for La3CuGaSe7.

Zinc and copper in animal feed – development of resistance and co-resistance to antimicrobial agents in bacteria of animal origin

PubMed Central

Yazdankhah, Siamak; Rudi, Knut; Bernhoft, Aksel

2014-01-01

Farmed animals such as pig and poultry receive additional Zn and Cu in their diets due to supplementing elements in compound feed as well as medical remedies. Enteral bacteria in farmed animals are shown to develop resistance to trace elements such as Zn and Cu. Resistance to Zn is often linked with resistance to methicillin in staphylococci, and Zn supplementation to animal feed may increase the proportion of multiresistant E. coli in the gut. Resistance to Cu in bacteria, in particular enterococci, is often associated with resistance to antimicrobial drugs like macrolides and glycopeptides (e.g. vancomycin). Such resistant bacteria may be transferred from the food-producing animals to humans (farmers, veterinarians, and consumers). Data on dose-response relation for Zn/Cu exposure and resistance are lacking; however, it seems more likely that a resistance-driven effect occurs at high trace element exposure than at more basal exposure levels. There is also lack of data which could demonstrate whether Zn/Cu-resistant bacteria may acquire antibiotic resistance genes/become antibiotics resistant, or if antibiotics-resistant bacteria are more capable to become Zn/Cu resistant than antibiotics-susceptible bacteria. Further research is needed to elucidate the link between Zn/Cu and antibiotic resistance in bacteria. PMID:25317117

Epitaxy of Zn{sub 2}TiO{sub 4} (1 1 1) thin films on GaN (0 0 1)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hsiao, Chu-Yun; Wu, Jhih-Cheng; Shih, Chuan-Feng, E-mail: cfshih@mail.ncku.edu.tw

2013-03-15

Highlights: ► High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by sputtering. ► Oxygen atmosphere and post heat-treatment annealing effectively enhanced epitaxy. ► The epitaxial Zn{sub 2}TiO{sub 4} modifies the dielectric properties of ceramic oxide. - Abstract: High-permittivity spinel Zn{sub 2}TiO{sub 4} thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn{sub 2}TiO{sub 4} films. Lattice image at the Zn{sub 2}TiO{sub 4} (1 1 1)/GaN (0 0 1) interface was obtained by high-resolutionmore » transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (111){sub Zn{sub 2TiO{sub 4}}}||(001){sub GaN}, (202{sup ¯}){sub Zn{sub 2TiO{sub 4}}}||(110){sub GaN},and[21{sup ¯}1{sup ¯}]{sub Zn{sub 2TiO{sub 4}}}||[01{sup ¯}10]{sub GaN}. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn{sub 2}TiO{sub 4} based capacitor were ∼18.9, 8.38 × 10{sup 11} eV{sup −1} cm{sup −2}, and 1.1 V, respectively, indicating the potential applications of the Zn{sub 2}TiO{sub 4} thin film to the GaN-based metal-oxide-semiconductor capacitor.« less

The effects of copper, manganese and zinc on plant growth and elemental accumulation in the manganese-hyperaccumulator Phytolacca americana.

PubMed

Zhao, Huijun; Wu, Liangqi; Chai, Tuanyao; Zhang, Yuxiu; Tan, Jinjuan; Ma, Shengwen

2012-09-01

Synchrotron radiation X-ray fluorescence (SRXRF) and inductively coupled plasma mass spectrometry were used to estimate major, minor and trace elements in Cu-, Zn- and Mn-treated Phytolacca americana. The effects of the addition of Cu, Zn and Mn on morphological parameters, such as root length, shoot height, and fresh and dry weights of shoots and roots, were also examined. In addition, the activities of superoxide dismutase (SOD), ascorbate peroxidase (APX), guaiacol peroxidases (GPX) and catalase (CAT) and the expression of Fe-SOD, Cu/Zn-SOD, metallothionein-2 and glutathione S-transferase (GST) exposed to the highest amounts of Cu, Zn or Mn were detected. Our results confirmed the following: (1) Zn supplementation leads to chlorosis, disturbed elemental homeostasis and decreased concentrations of micro- and macroelements such as Fe, Mg, Mn, Ca and K. Cu competed with Fe, Mn and Zn uptake in plants supplemented with 25 μM Cu. However, no antagonistic interactions took place between Cu, Zn, Mn and Fe uptake in plants supplemented with 100 μM Cu. Mn supplementation at various concentrations had no negative effects on elemental deficits. Mn was co-located with high concentrations of Fe and Zn in mature leaves and the concentrations of macro elements were unchanged. (2) P. americana supplemented with increased concentrations of Zn and Cu exhibited lower biomass production and reduced plant growth. (3) When plants were supplemented with the highest Zn and Cu concentrations, symptoms of toxicity corresponded to decreased SOD or CAT activities and increased APX and GPX activities. However, Mn tolerance corresponded to increased SOD and CAT activities and decreased POD and APX activities. Our study revealed that heavy metals partially exert toxicity by disturbing the nutrient balance and modifying enzyme activities that induce damage in plants. However, P. americana has evolved hyper accumulating mechanisms to maintain elemental balance and redox homeostasis under excess Mn. Copyright © 2012 Elsevier GmbH. All rights reserved.

Molecular Responses to Photooxidative Stress in Pinus sylvestris (L.) (II. Differential Expression of CuZn-Superoxide Dismutases and Glutathione Reductase.

PubMed Central

Karpinski, S.; Wingsle, G.; Karpinska, B.; Hallgren, J. E.

1993-01-01

The influence of photooxidative stress on genes expressing superoxide dismutase (Sod) and glutathione reductase (Gor) was analyzed in needles of top and side shoots of 3-year-old Pinus sylvestris (L.) seedlings. The study was carried out in the field during spring recovery. From mid-April the top shoots of seedlings protruded above the snow and thus were exposed to sunlight, whereas the side shoots were covered with snow until May 4. Needles were sampled from top and side shoots on five different occasions. At the beginning of May the mRNA levels for cytosolic CuZn-Sod were significantly higher in top-shoot needles than in side-shoot needles. Similar results were obtained for chloroplastic CuZn-Sod mRNA. After May 6 we could not detect any significant differences between top- and side-shoot needles for either CuZn-Sod mRNA level. Transcript accumulation for the chloroplastic CuZn-Sod was up to 4-fold higher than for cytosolic CuZn-Sod in both types of shoots. On June 1 minimum transcript levels were observed for both CuZn-SOD isoforms. Protein activity analysis for CuZn-SOD isozymes did not reveal any significant differences between top- and side-shoot needles during the whole period of measurements. The mRNA level for chloroplastic Gor was similar in both types of shoots. However, the total GR activity was significantly higher in top-shoot needles than in side-shoot needles at the beginning of May. The analysis of mRNA accumulation for chloroplastic CuZn-Sod and Gor indicates that transcript levels were at least 5- to 20-fold higher for CuZn-Sod than for chloroplastic Gor. The differential expressions of Sod and Gor genes are discussed in relation to regulation of the enzymic scavenging system during photooxidative stress conditions. PMID:12232032

Tracing contamination sources in soils with Cu and Zn isotopic ratios.

PubMed

Fekiacova, Z; Cornu, S; Pichat, S

2015-06-01

Copper (Cu) and zinc (Zn) are naturally present and ubiquitous in soils and are important micronutrients. Human activities contribute to the input of these metals to soils in different chemical forms, which can sometimes reach a toxic level for soil organisms and plants. Isotopic signatures could be used to trace sources of anthropogenic Cu and Zn pollution. The aim of this paper is to determine whether it is possible to identify (i) Cu and Zn contamination in soils and their sources, on the basis of their isotopic signatures, and (ii) situations that are a priori favorable or not for tracing Cu and Zn pollution using the isotopic approach. Therefore, we compiled data from the literature on Cu and Zn isotopes in soils, rocks and pollutants and added to this database the results of our own research. As only a few studies have dealt with agricultural contamination, we also studied a soil toposequence from Brittany, France, that experienced spreading of pig slurry for tens of years. In the surface horizons of the natural soils, the δ(65)Cu values vary from -0.15 to 0.44‰ and the δ(66)Zn from -0.03 to 0.43‰. Furthermore, vertical variations along soil profiles range from -0.95 to 0.44‰ for δ(65)Cu and from -0.53 to 0.64‰ for δ(66)Zn values. We concluded that pedogenetic processes can produce isotopic fractionation, yet, it is not always discernible and can be overprinted by an exogenous isotopic signature. Furthermore, some contaminants are enriched in heavy Cu or in light Zn compared to the rock or soil, but no generalization can be made. The anthropogenic inputs can be identified based on stable Cu and Zn isotope ratios if the isotope ratios of the sources are different from those of the soil, which needs to be tested for each individual case. Copyright © 2015 Elsevier B.V. All rights reserved.

Replacement of a cytosolic copper/zinc superoxide dismutase by a novel cytosolic manganese superoxide dismutase in crustaceans that use copper (haemocyanin) for oxygen transport.

PubMed Central

Brouwer, Marius; Hoexum Brouwer, Thea; Grater, Walter; Brown-Peterson, Nancy

2003-01-01

The blue crab, Callinectes sapidus, which uses the copper-dependent protein haemocyanin for oxygen transport, lacks the ubiquitous cytosolic copper-dependent enzyme copper/zinc superoxide dismutase (Cu,ZnSOD) as evidenced by undetectable levels of Cu,ZnSOD activity, protein and mRNA in the hepatopancreas (the site of haemocyanin synthesis) and gills. Instead, the crab has an unusual cytosolic manganese SOD (cytMnSOD), which is retained in the cytosol, because it lacks a mitochondrial transit peptide. A second familiar MnSOD is present in the mitochondria (mtMnSOD). This unique phenomenon occurs in all Crustacea that use haemocyanin for oxygen transport. Molecular phylogeny analysis suggests the MnSOD gene duplication is as old as the origin of the arthropod phylum. cytMnSOD activity in the hepatopancreas changes during the moulting cycle of the crab. Activity is high in intermoult crabs and non-detectable in postmoult papershell crabs. mtMnSOD is present in all stages of the moulting cycle. Despite the lack of cytCu,ZnSOD, crabs have an extracellular Cu,ZnSOD (ecCu,ZnSOD) that is produced by haemocytes, and is part of a large, approx. 160 kDa, covalently-linked protein complex. ecCu,ZnSOD is absent from the hepatopancreas of intermoult crabs, but appears in this tissue at premoult. However, no ecCu,ZnSOD mRNA can be detected, suggesting that the protein is recruited from the haemolymph. Screening of different taxa of the arthropod phylum for Cu,ZnSOD activity shows that those crustaceans that use haemoglobin for oxygen transport have retained cytCu,ZnSOD. It appears, therefore, that the replacement of cytCu,ZnSOD with cytMnSOD is part of an adaptive response to the dynamic, haemocyanin-linked, fluctuations in copper metabolism that occur during the moulting cycle of the crab. PMID:12769817

Electrodeposition of hierarchical ZnO/Cu{sub 2}O nanorod films for highly efficient visible-light-driven photocatalytic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, S. T.; Fan, G. H.; Liang, M. L.

2014-02-14

The development of high-performance visible-light-responsive photocatalytic materials has attracted widespread interest due to their potential applications in the environmental and energy industries. In this work, hierarchical ZnO nanorods films were successfully prepared on the stainless steel mesh substrates via a simple two-step seed-assisted electrodeposition route. Cu{sub 2}O nanoparticles were then electrodeposited on the surface of ZnO nanorods to form the core-shell heterostructure. The synthesized ZnO/Cu{sub 2}O nanocomposites were characterized by X-ray diffraction, field-emission scanning electron microscopy, and UV-visible spectrophotometer. Due to the branched hierarchical morphologies and core-shell structure, ZnO/Cu{sub 2}O nanomaterials show a prominent visible-light-driven photocatalytic performance under the low-intensitymore » light irradiation (40 mW/cm{sup 2}). The influence of some experimental parameters, such as Cu{sub 2}O loading amount, ZnO morphologies, the substrate type, and the PH of the Cu{sub 2}O precursor solution on ZnO/Cu{sub 2}O photocatalytic performance was evaluated.« less

A hetero-homogeneous investigation of chemical bath deposited Ga-doped ZnO nanorods

NASA Astrophysics Data System (ADS)

Rakhsha, Amir Hosein; Abdizadeh, Hossein; Pourshaban, Erfan; Golobostanfard, Mohammad Reza

2018-01-01

One-dimensional nanostructures of zinc oxide (ZnO) have been in the center of attention, mostly for electronic applications due to their distinctive properties such as high electron mobility (100 cm2V-1s-1) and crystallinity. Thanks to its high density of vacancies and interstitial sites, wurtzite lattice of ZnO is a suitable host for gallium (Ga) as a dopant element. Herein, ZnO nanorod arrays (NRAs) are synthesized by a low-temperature chemical bath deposition (CBD) method with various concentrations of gallium nitrate hydrate as a dopant precursor. Structural and morphological analyses confirm that optimum properties of gallium-doped ZnO (GZO) are obtained at 1% (Ga to Zn molar ratio). Owing to the replacement of smaller Ga3+ ions with Zn2+ ions in the GZO structure, a slight shift of (002) peak to higher angles could be observed in XRD pattern of GZO NRAs. The scanning electron microscope images demonstrate a proliferation in the ZnO NRAs length from 650 nm for undoped ZnO (UZO) to 1200 nm for GZO-1%. However, increasing the dopant concentration above 2.5% results in formation of homogeneous zinc gallium oxide in the bulk solution, which is a sign of inefficient process of doping in GZO NRAs. Furthermore, photoluminescence spectroscopy is used to characterize the band-gap variation of the samples, which demonstrates a small red-shift in the UV emission peak and a decrease in visible emission peak intensity with introducing Ga in ZnO lattice. Lower resistivity for GZO-1% (1.1 MΩ) sample compared to UZO (1.4 MΩ) is recorded, which is compelling evidence for the presence of Ga3+ in ZnO lattice. The results suggest that incorporating Ga into ZnO lattice using CBD method is an easy and effective technique to improve the electrical properties of ZnO NRAs that is an essential factor for a broad range of devices.

Synthesis of GaN:ZnO solid solution by solution combustion method and characterization for photocatalytic application

NASA Astrophysics Data System (ADS)

Menon, Sumithra Sivadas; Anitha, R.; Gupta, Bhavana; Baskar, K.; Singh, Shubra

2016-05-01

GaN-ZnO solid solution has emerged as a successful and reproducible photocatalyst for overall water splitting by one-step photoexcitation, with a bandgap in visible region. When the solid solution is formed, some of the Zn and O ions are replaced by Ga and N ions respectively and there is a narrowing of bandgap which is hypothesized as due to Zn3d-N2p repulsion. The traditional method of synthesis of GaN-ZnO solid solution is by nitridation of the starting oxides under constant ammonia flow. Here we report a solution combustion technique for the synthesis of the solid solution at a temperature about 500 ° C in a muffle furnace with metal nitrates as precursors and urea as the fuel. The as prepared samples showed change in color with the increased concentration of ZnO in the solution. The structural, microstructural, morphological and optical properties of the samples were realized by Powder X ray diffraction, Scanning electron microscopy, Energy dispersive X ray analysis, Transmission electron microscopy and Photoluminescence. Finally the hydrogen production efficiency of the GaN-ZnO nanopowders by water splitting was found, using methanol as a scavenger. The apparent quantum yield (AQY) of 0.048% is obtained for GaN-ZnO solid solution.

[Changes in bio-availability of immobilized Cu and Zn bound to phosphate in contaminated soils with different nutrient addition].

PubMed

Xu, Ming-Gang; Zhang, Qian; Sun, Nan; Shen, Hua-Ping; Zhang, Wen-Ju

2009-07-15

Bio-availability of Cu and Zn fixed by phosphate in contaminated soils with application of nutrients were measured by pot experiment. It was simulated for the third national standardization of copper and zinc polluted soils by adding copper and zinc nitrate into red and paddy soils, respectively and together. Phosphate amendment was added to the soils to fix Cu and Zn, then added KCl and NH4Cl or K2SO4 and (NH4)2SO4 fertilizers following to plant Ryegrass, which was harvested after 40 d. Available Cu/Zn content in soils and biomass, Cu/Zn content in the shoot of Ryegrass were determined. Results showed that, compared with no nutrient application, adding KCl and NH4 Cl/K2SO4 and (NH4)2SO4 to polluted red and paddy soils increased the available Cu and Zn content in red soil significantly. The increasing order was KCl and NH4 Cl > K2SO4 and (NH4)2SO4. Especially in single Zn polluted red soil, the available Zn content increased by 133.4% in maximum. Although adding K2SO4 and (NH4)2SO4 could promote the growth of Ryegrass on red soil, and the largest increasing was up to 22.2%, it increased Cu and Zn content in the shoot of Ryegrass for 21.5%-112.6% remarkably. These nutrient effects on available Cu and Zn were not significantly in paddy soil. It was suggested that application of nitrogen and potassium fertilizers to soils could change the bioavailability of Cu/Zn. So it is necessary to take full account of the nutrient influence to the heavy metal stability which fixed by phosphate in contaminated soils when consider contaminated soils remediation by fertilization.

Development of Biodegradable Zinc Oxide Nanowires Targeting Breast Cancer Metastasis

DTIC Science & Technology

2013-09-01

of highly-specificity anti-CD146 monoclonal antibody. 2. Bioconjugation of YY146 to a chelating moiety (NOTA) for the radiolabeling with 64Cu and...vivo investigation of 64Cu -NOTA-ZnO-PEG-TRC105 in 4T1 tumor bearing mice. A serial of coronal PET images about 4T1 tumor-bearing mice at 0.5, 3, 17...and 24 post-injection of 64Cu -NOTA-ZnO-PEG-TRC105, 64Cu -NOTA-ZnO-PEG and TRC105 before 64Cu -NOTA-ZnO-PEG-TRC105 (i.e., blocking). Tumors are

Photoeletrocatalytic activity of an n-ZnO/p-Cu2O/n-TNA ternary heterojunction electrode for tetracycline degradation.

PubMed

Li, Jinhua; Lv, Shubin; Liu, Yanbiao; Bai, Jing; Zhou, Baoxue; Hu, Xiaofang

2013-11-15

In this study, a novel ternary heterojunction n-ZnO/p-Cu2O/n-TiO2 nanotube arrays (n-ZnO/p-Cu2O/n-TNA) nanophotocatalyst with a sandwich-like nanostructure was constructed and applied for the photoelectrocatalytic (PEC) degradation of typical PPCPs, tetracycline (TC). The ternary heterojunction n-ZnO/p-Cu2O/n-TNA was obtained by depositing Cu2O on the surface of TNA via sonoelectrochemical deposition (SED) and subsequently building a layer of ZnO onto the p-Cu2O/n-TNA surface through hydrothermal synthesis. After being deposited by the Cu2O, the absorption-band edge of the p-Cu2O/n-TNA was obviously red-shifted to the visible region (to 505 nm), and the band gap was reduced from its original 3.20 eV to 2.46 eV. The band gap absorption edge of the ternary n-ZnO/p-Cu2O/n-TNA is similar to that of p-Cu2O/n-TN and extends the visible spectrum absorption to 510 nm, corresponding to an Eg value of about 2.43 eV. Under illumination of visible light, the photocurrent density of the ternary heterojunction n-ZnO/p-Cu2O/n-TNA electrode at 0.5 V (vs. Ag/AgCl) was more than 106 times as high as that of the pure TNAs electrode, 3.6 times as high as that of the binary heterojunction p-Cu2O/n-TNA electrode. The degradation of TC indicated that the ternary heterojunction n-ZnO/p-Cu2O/n-TNA electrode maintained a very high photoelectrocatalytic activity and excellent stability and reliability. Such kind of ternary heterojunction electrode material has a broad application prospect not only in pollution control but also in many other fields. Copyright © 2013 Elsevier B.V. All rights reserved.

Comparative inhalation toxicology of selected materials. Phase 2. Final report, January-July 1986

DOE Office of Scientific and Technical Information (OSTI.GOV)

Snipes, M.B.; Bice, D.E.; Burt, D.G.

1988-05-01

Male and female F344/N rats were exposed nose-only to a respirable powder of copper-zinc alloy. No rats died as a result of the exposures. Body weights were reduced relative to sham-exposed rats for rats exposed to 240 and 480 mg. hr Cu-Zn/cu.m week. All of the additional observed biological responses to inhaled Cu-Zn were restricted to the respiratory tract. Lung weights were increased due to an inflammatory response for rats exposed to 120 mg. hr Cu-Zn/cu.m or more per week. Exposure to 240 mg. hr Cu-zn/cu.m per week caused restrictive pulmonary functional disorder, as evidenced by a reduced lung capacity,more » reduced quasi-static compliance, reduced carbon monoxide diffusing capacity, and increased percent forced vital capacity exhaled in 0.1 second. Exposure-related responses in lavage-fluid indicators of lung damage included increased beta-glucuronidase, increased lactate dehydrogenase, and increases in inflammatory cells, total protein, and collagen. Histological lesions produced by Cu-Zn were atrophy of the nasal olfactory epithelium and hyperplasia of goblet cells in the respiratory epithelium, focal necrotizing alveolitis, alveolar macrophage hyperplasia, and goblet cell hyperplasia of bronchial and bronchiolar epithelium. The inhaled Cu-Zn alloy caused exposure-related inflammatory and cytotoxic responses in the respiratory tract, but the inhaled Cu-Zn cleared rapidly and the responses largely resolved after cessation of exposures.« less

(Zn,H)-codoped copper oxide nanoparticles via pulsed laser ablation on Cu-Zn alloy in water

PubMed Central

2012-01-01

Nanosized (5 to 10 nm) amorphous and crystalline nanocondensates, i.e., metallic α-phase of Zn-Cu alloy in face-centered cubic structure and (Zn,H)-codoped cuprite (Cu2O) with high-pressure-favored close-packed sublattice, were formed by pulsed laser ablation on bulk Cu65Zn35 in water and characterized by X-ray/electron diffractions and optical spectroscopy. The as-fabricated hybrid nanocondensates are darkish and showed photoluminescence in the whole visible region. Further dwelling of such nanocondensates in water caused progressive formation of a rice-like assembly of (Zn,H)-codoped tenorite (CuO) nanoparticles with (001), (100), and {111} preferred orientations, (111) tilt boundary, yellowish color, and minimum bandgap narrowing down to ca. 2.7 eV for potential photocatalytic applications. PMID:22647312

Contrasting the material chemistry of Cu 2ZnSnSe 4 and Cu 2ZnSnS (4-x)Se x

DOE PAGES

Aguiar, Jeffery A.; Patel, Maulik; Aoki, Toshihiro; ...

2016-02-02

Earth-abundant sustainable inorganic thin-film solar cells, independent of precious elements, pivot on a marginal material phase space targeting specific compounds. Advanced materials characterization efforts are necessary to expose the roles of microstructure, chemistry, and interfaces. Here, the earth-abundant solar cell device, Cu 2ZnSnS (4-x)Se x, is reported, which shows a high abundance of secondary phases compared to similarly grown Cu 2ZnSnSe 4.

Experimental results and model calculations of excitation functions relevant to the production of specific radioisotopes for metabolic radiotherapy and for pet

NASA Astrophysics Data System (ADS)

Menapace, E.; Birattari, C.; Bonardi, M. L.; Groppi, F.

2004-10-01

First results are given from the comparison of experimental values and model calculations on accelerator-produced high specific activity radionuclides in no-carrier-added (NCA) form. The relevant radioisotopes are: 64Cu, produced by natZn(d, αxn) and natZn(d,2p) reactions, for simultaneous positron/negatron metabolic radiotherapy and PET imaging; 66Ga high-energy positron emitter (4.2 MeV), produced by natZn(d, xn) reactions, for metabolic radiotherapy and for PET; 186gRe, produced by 186W(p,n) and 186W(d,2n) reactions, for negatron (1.1 MeV) metabolic radiotherapy; 211At/ 211Po, produced by 209Bi( α,2n) reaction (with spike of gamma emitter 210At produced by 209Bi( α,3n) reaction) and 225Ac/ 213Bi/ 213Po, produced by 226Ra(p,2n) reaction, both for high-LET radiotherapy.

Zinc oxide and related compounds: order within the disorder

NASA Astrophysics Data System (ADS)

Martins, R.; Pereira, Luisa; Barquinha, P.; Ferreira, I.; Prabakaran, R.; Goncalves, G.; Goncalves, A.; Fortunato, E.

2009-02-01

This paper discusses the effect of order and disorder on the electrical and optical performance of ionic oxide semiconductors based on zinc oxide. These materials are used as active thin films in electronic devices such as pn heterojunction solar cells and thin-film transistors. Considering the expected conduction mechanism in ordered and disordered semiconductors the role of the spherical symmetry of the s electron conduction bands will be analyzed and compared to covalent semiconductors. The obtained results show p-type c-Si/a-IZO/poly-ZGO solar cells exhibiting efficiencies above 14%, in device areas of about 2.34 cm2. Amorphous oxide TFTs based on the Ga-Zn-Sn-O system demonstrate superior performance than the polycrystalline TFTs based on ZnO, translated by ION/IOFF ratio exceeding 107, turn-on voltage below 1-2 V and saturation mobility above 25 cm2/Vs. Apart from that, preliminary data on p-type oxide TFT based on the Zn-Cu-O system will also be presented.

Effect of Zn/Sn molar ratio on the microstructural and optical properties of Cu2Zn1-xSnxS4 thin films prepared by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Thiruvenkadam, S.; Prabhakaran, S.; Sujay Chakravarty; Ganesan, V.; Vasant Sathe; Santhosh Kumar, M. C.; Leo Rajesh, A.

2018-03-01

Quaternary kesterite Cu2ZnSnS4 (CZTS) compound is one of the most promising semiconductor materials consisting of abundant and eco-friendly elements for absorption layer in thin film solar cells. The effect of Zn/Sn ratio on Cu2Zn1-xSnxS4 (0 ≤ x ≤ 1) thin films were studied by deposited by varying molar volumes in the precursor solution of zinc and tin was carried out in proportion of (1-x) and x respectively onto soda lime glass substrates kept at 573 K by using chemical spray pyrolysis technique. The GIXRD pattern revealed that the films having composites of Cu2ZnSnS4, Cu2SnS3, Sn2S3, CuS and ZnS phases. The crystallinity and grain size were found to increase by increasing the x value and the preferential orientation along (103), (112), (108) and (111) direction corresponding to CZTS, Cu2SnS3, CuS, and ZnS phases respectively. Micro-Raman spectra exposed a prominent peak at 332 cm-1 corresponding to the CZTS phase. Atomic force microscopy was employed to study the grain size and roughness of the deposited thin films. The optical band gap was found to lie between 1.45 and 2.25 eV and average optical absorption coefficient was found to be greater than 105 cm-1. Hall measurements exhibited that all the deposited Cu2Zn1-xSnxS4 films were p type and the resistivity lies between 10.9 ×10-2Ωcm and 149.6 × 10-2Ωcm .

Dual-Analyte Fluorescent Sensor Based on [5]Helicene Derivative with Super Large Stokes Shift for the Selective Determinations of Cu2+ or Zn2+ in Buffer Solutions and Its Application in a Living Cell.

PubMed

Sakunkaewkasem, Siwakorn; Petdum, Anuwut; Panchan, Waraporn; Sirirak, Jitnapa; Charoenpanich, Adisri; Sooksimuang, Thanasat; Wanichacheva, Nantanit

2018-05-10

A new fluorescent sensor, M201-DPA, based on [5]helicene derivative was utilized as dual-analyte sensor for determination of Cu 2+ or Zn 2+ in different media and different emission wavelengths. The sensor could provide selective and bifunctional determination of Cu 2+ in HEPES buffer containing Triton-X100 and Zn 2+ in Tris buffer/methanol without interference from each other and other ions. In HEPES buffer, M201-DPA demonstrated the selective ON-OFF fluorescence quenching at 524 nm toward Cu 2+ . On the other hand, in Tris buffer/methanol, M201-DPA showed the selective OFF-ON fluorescence enhancement upon the addition of Zn 2+ , which was specified by the hypsochromic shift at 448 nm. Additionally, M201-DPA showed extremely large Stokes shifts up to ∼150 nm. By controlling the concentration of Zn 2+ and Cu 2+ in a living cell, the imaging of a HepG2 cellular system was performed, in which the fluorescence of M201-DPA in the blue channel was decreased upon addition of Cu 2+ and was enhanced in UV channel upon addition of Zn 2+ . The detection limits of M201-DPA for Cu 2+ and Zn 2+ in buffer solutions were 5.6 and 3.8 ppb, respectively. Importantly, the Cu 2+ and Zn 2+ detection limits of the developed sensors were significantly lower than permitted Cu 2+ and Zn 2+ concentrations in drinking water as established by the U.S. EPA and WHO.

Potential of Cultivated Ganoderma lucidum Mushrooms for the Production of Supplements Enriched with Essential Elements.

PubMed

Rzymski, Piotr; Mleczek, Mirosław; Niedzielski, Przemysław; Siwulski, Marek; Gąsecka, Monika

2016-03-01

Ganoderma lucidum is an important medicinal mushroom species and there is continuous interest in its bioactive properties. This study evaluated whether it may additionally serve as a nutritional supplement for the trace elements: selenium (Se), copper (Cu), and zinc (Zn). Mushrooms were cultivated on substrates enriched with 0.1 to 0.8 mM of inorganic Se alone or in combination with Zn and/or Cu. Supplementation increased accumulation of the elements in fruiting bodies regardless of the applied cultivation model. G. lucidum demonstrated the ability to accumulate significant amounts of organic Se, maximally amounting to (i) over 44 mg/kg when the substrate was supplemented only with Se, (ii) over 20 mg/kg in the Se+Cu model, (iii) over 25 mg/kg in the Se+Zn model, and (iv) 15 mg/kg in the Se+Cu+Zn model. The accumulation of Cu and Zn steadily increased with their initial substrate concentrations. Maximum concentrations found after supplementation with 0.8 mM amounted to over 55 mg/kg (Se+Zn) and 52 mg/kg (Se+Cu+Zn) of Zn, and 29 mg/kg (Se+Cu) and over 31 mg/kg (Se+Cu+Zn) of Cu. The greater the supplemented concentration and number of supplemented elements, the lower the biomass of G. lucidum fruiting bodies. Nevertheless, it still remained high when the substrate was supplemented up to 0.4 mM with each element. These results highlight that G. lucidum can easily incorporate elements from the substrate and that, when biofortified, its dried fruiting bodies may serve as a nutritional source of these essential elements. © 2016 Institute of Food Technologists®

ZnO/Cu nanocomposite: a platform for direct electrochemistry of enzymes and biosensing applications.

PubMed

Yang, Chi; Xu, Chunxiang; Wang, Xuemei

2012-03-06

Unique structured nanomaterials can facilitate the direct electron transfer between redox proteins and the electrodes. Here, in situ directed growth on an electrode of a ZnO/Cu nanocomposite was prepared by a simple corrosion approach, which enables robust mechanical adhesion and electrical contact between the nanostructured ZnO and the electrodes. This is great help to realize the direct electron transfer between the electrode surface and the redox protein. SEM images demonstrate that the morphology of the ZnO/Cu nanocomposite has a large specific surface area, which is favorable to immobilize the biomolecules and construct biosensors. Using glucose oxidase (GOx) as a model, this ZnO/Cu nanocomposite is employed for immobilization of GOx and the construction of the glucose biosensor. Direct electron transfer of GOx is achieved at ZnO/Cu nanocomposite with a high heterogeneous electron transfer rate constant of 0.67 ± 0.06 s(-1). Such ZnO/Cu nanocomposite provides a good matrix for direct electrochemistry of enzymes and mediator-free enzymatic biosensors.

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures.

PubMed

Chen, Ying; Emanetoglu, Nuri William; Saraf, Gaurav; Wu, Pan; Lu, Yicheng; Parekh, Aniruddh; Merai, Vinod; Udovich, Eric; Lu, Dong; Lee, Dong S; Armour, Eric A; Pophristic, Milan

2005-07-01

Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

Glassy behavior of diluted Cu-Zn ferrites

NASA Astrophysics Data System (ADS)

Akhter, Shahida; Hakim, M. A.; Hoque, S. M.; Mathieu, R.; Nordblad, P.

2018-04-01

The magnetic behavior of Zn substituted Cu-Zn spinel ferrites having chemical formula Cu1-xZnxFe2O4 (x = 0.7, 0.8, 0.9 and 1.0) has been studied by SQUID magnetometry, by means of magnetic hysteresis, field-cooled (FC) and zero-field-cooled (ZFC) magnetization, memory effect and low field ac susceptibility measurements. These measurements suggest that the ferrimagnetic phase of the x ≤ 0.8 samples is gradually turned into a spin glass (x ≥ 0.9). The compound with x = 0.9 exhibits the typical dynamical behavior of spin glasses, with indication of aging, rejuvenation and memory effects. The evolution of the magnetic properties of Cu-Zn spinel ferrites with substitution of Zn for Cu is discussed.

Bioaccumulation of Zn, Cu and Mn in the caviar and muscle of Persian sturgeon (Acipenser persicus) from the Caspian Sea, Iran.

PubMed

Mashroofeh, Abdulreza; Bakhtiari, Alireza Riyahi; Pourkazemi, Mohammad

2012-12-01

Concentrations of Zn, Cu and Mn were examined in caviar and muscle of the Persian sturgeon (Acipenser persicus) collected from coastal waters of south Caspian Sea during March and April, 2011. Mean Zn, Cu and Mn concentrations in caviar samples were 21.48, 2.05 and 1.66 μg g(-1) wet weight basis, respectively. The mean Zn, Cu and Mn concentrations in muscle tissues were 7.49, 1.00 and 0.34 μg g(-1) wet weight basis, respectively. The mean concentrations of Zn and Cu in caviar and muscle samples were under the permissible limits proposed by the United Kingdom's Ministry of Agriculture, Fisheries and Food (2000).

Hydrogen effects on the electroluminescence of n-ZnO nanorod/p-GaN film heterojunction light-emitting diodes.

PubMed

Fang, Fang; Zhao, Dongxu; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2010-07-07

Through a facile low-temperature solution process, vertically n-type ZnO nanorod arrays were grown on a GaN film to form a n-ZnO nanorod/p-GaN film heterojunction. A study of the electroluminescence (EL) characteristics of the heterojunction in air and in air with 2000 ppm hydrogen revealed the sensitivity of such a device to the surrounding atmosphere. The additional hydrogen shallow donors increased the effective electron concentration in ZnO nanorods and the EL recombination zone changed from the ZnO nanorods to the GaN film, which can be identified visually from the color change.

Competitive adsorption of heavy metals by extracellular polymeric substances extracted from Klebsiella sp. J1.

PubMed

Yang, Jixian; Wei, Wei; Pi, Shanshan; Ma, Fang; Li, Ang; Wu, Dan; Xing, Jie

2015-11-01

The adsorption of Cu(2+) and Zn(2+) by extracellular polymeric substances (EPS) extracted from Klebsiella sp. J1 and competitive adsorption mechanism were investigated. Equilibrium adsorption capacities of Cu(2+) (1.77mMg(-1)) on Klebsiella sp. J1 EPS were higher than those of Zn(2+) (1.36mMg(-1)) in single systems. The competitive Langmuir and Langmuir-Freundlich isotherm models were proven to be effective in describing the experimental data of binary component system. The three dimensional sorption surfaces of binary component system demonstrated that the presence of Cu(2+) more significantly decreased the sorption of Zn(2+), but the sorption of Cu(2+) was not disturbed by the presence of Zn(2+). FTIR and EEM results revealed the adsorption sites of Cu(2+) entirely overlapped with those of Zn(2+). Cu(2+) and Zn(2+) showed competitive adsorption in binary systems, and Cu(2+) was preferentially adsorbed because of the stronger complexation ability of the protein-like substances in Klebsiella sp. J1 EPS. Copyright © 2015 Elsevier Ltd. All rights reserved.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate

PubMed Central

2013-01-01

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques. PMID:23448090

Anisotropic polaron localization and spontaneous symmetry breaking: Comparison of cation-site acceptors in GaN and ZnO

NASA Astrophysics Data System (ADS)

Sun, Y. Y.; Abtew, Tesfaye A.; Zhang, Peihong; Zhang, S. B.

2014-10-01

The behavior of cation substitutional hole doping in GaN and ZnO is investigated using hybrid density functional calculations. Our results reveal that Mg substitution for Ga (MgGa) in GaN can assume three different configurations. Two of the configurations are characterized by the formation of defect-bound small polaron (i.e., a large structural distortion accompanied by hole localization on one of the neighboring N atoms). The third one has a relatively small but significant distortion that is characterized by highly anisotropic polaron localization. In this third configuration, MgGa exhibits both effective-mass-like and noneffective-mass-like characters. In contrast, a similar defect in ZnO, LiZn, cannot sustain the anisotropic polaron in the hybrid functional calculation, but undergoes spontaneous breaking of a mirror symmetry through a mechanism driven by the hole localization. Finally, using NaZn in ZnO as an example, we show that the deep acceptor levels of the small-polaron defects could be made shallower by applying compressive strain to the material.

Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate.

PubMed

Wei, Xianqi; Zhao, Ranran; Shao, Minghui; Xu, Xijin; Huang, Jinzhao

2013-02-28

Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.

Thioredoxin-albumin fusion protein prevents copper enhanced zinc-induced neurotoxicity via its antioxidative activity.

PubMed

Tanaka, Ken-Ichiro; Shimoda, Mikako; Chuang, Victor T G; Nishida, Kento; Kawahara, Masahiro; Ishida, Tatsuhiro; Otagiri, Masaki; Maruyama, Toru; Ishima, Yu

2018-01-15

Zinc (Zn) is a co-factor for a vast number of enzymes, and functions as a regulator for immune mechanism and protein synthesis. However, excessive Zn release induced in pathological situations such as stroke or transient global ischemia is toxic. Previously, we demonstrated that the interaction of Zn and copper (Cu) is involved in the pathogenesis of Alzheimer's disease and vascular dementia. Furthermore, oxidative stress has been shown to play a significant role in the pathogenesis of various metal ions induced neuronal death. Thioredoxin-Albumin fusion (HSA-Trx) is a derivative of thioredoxin (Trx), an antioxidative protein, with improved plasma retention and stability of Trx. In this study, we examined the effect of HSA-Trx on Cu 2+ /Zn 2+ -induced neurotoxicity. Firstly, HSA-Trx was found to clearly suppress Cu 2+ /Zn 2+ -induced neuronal cell death in mouse hypothalamic neuronal cells (GT1-7 cells). Moreover, HSA-Trx markedly suppressed Cu 2+ /Zn 2+ -induced ROS production and the expression of oxidative stress related genes, such as heme oxygenase-1. In contrast, HSA-Trx did not affect the intracellular levels of both Cu 2+ and Zn 2+ after Cu 2+ /Zn 2+ treatment. Finally, HSA-Trx was found to significantly suppress endoplasmic reticulum (ER) stress response induced by Cu 2+ /Zn 2+ treatment in a dose dependent manner. These results suggest that HSA-Trx counteracted Cu 2+ /Zn 2+ -induced neurotoxicity by suppressing the production of ROS via interfering the related gene expressions, in addition to the highly possible radical scavenging activity of the fusion protein. Based on these findings, HSA-Trx has great potential as a promising therapeutic agent for the treatment of refractory neurological diseases. Copyright © 2017 Elsevier B.V. All rights reserved.

Low-Cd CIGS solar cells made with a hybrid CdS/Zn(O,S) buffer layer

DOE PAGES

Garris, Rebekah L.; Mansfield, Lorelle M.; Egaas, Brian; ...

2016-10-27

In Cu(In,Ga)Se2 (CIGS) solar cells, CdS and Zn(O,S) buffer layers were compared with a hybrid buffer layer consisting of thin CdS followed Zn(O,S). We explore the physics of this hybrid layer that combines the standard (Cd) approach with the alternative (Zn) approach in the pursuit to unlock further potential for CIGS technology. CdS buffer development has shown optimal interface properties, whereas Zn(O,S) buffer development has shown increased photocurrent. Although a totally Cd-free solar module is more marketable, the retention of a small amount of Cd can be beneficial to achieve optimum junction properties. As long as the amount of Cdmore » is reduced to less than 0.01% by weight, the presence of Cd does not violate the hazardous substance restrictions of the European Union (EU). We estimate the amount of Cd allowed in the EU for CIGS on both glass and stainless steel substrates, and we show that reducing Cd becomes increasingly important as substrate weights decrease. As a result, this hybrid buffer layer had reduced Cd content and a wider space charge region, while achieving equal or better solar cell performance than buffer layers of either CdS or Zn(O,S) alone.« less

Comparison of Antibacterial Effects of ZnO and CuO Nanoparticles Coated Brackets against Streptococcus Mutans.

PubMed

Ramazanzadeh, Baratali; Jahanbin, Arezoo; Yaghoubi, Masoud; Shahtahmassbi, Nasser; Ghazvini, Kiarash; Shakeri, Mohammadtaghi; Shafaee, Hooman

2015-09-01

During the orthodontic treatment, microbial plaques may accumulate around the brackets and cause caries, especially in high-risk patients. Finding ways to eliminate this microbial plaque seems to be essential. The aim of this study was to compare the antibacterial effects of nano copper oxide (CuO) and nano zinc oxide (ZnO) coated brackets against Streptococcus mutans (S.mutans) in order to decrease the risk of caries around the orthodontic brackets during the treatment. Sixty brackets were coated with nanoparticles of ZnO (n=20), CuO (n=20) and CuO-ZnO (n=20). Twelve uncoated brackets constituted the control group. The brackets were bonded to the crowns of extracted premolars, sterilized and prepared for antimicrobial tests (S.mutans ATCC35668). The samples taken after 0, 2, 4, 6 and 24 hours were cultured on agar plates. Colonies were counted 24 hours after incubation. One-way ANOVA and Tukey tests were used for statistical analysis. In CuO and CuO-ZnO coated brackets, no colony growth was seen after two hours. Between 0-6 hours, the mean colony counts were not significantly different between the ZnO and the control group (p>0.05). During 6-24 hours, the growth of S.mutans was significantly reduced by ZnO nanoparticles in comparison with the control group (p< 0.001). However, these bacteria were not totally eliminated. CuO and ZnO-CuO nanoparticles coated brackets have better antimicrobial effect on S.mutans than ZnO coated brackets.

Structure flexibility of the Cu2ZnSnS4 absorber in low-cost photovoltaic cells: from the stoichiometric to the copper-poor compounds.

PubMed

Choubrac, L; Lafond, A; Guillot-Deudon, C; Moëlo, Y; Jobic, S

2012-03-19

Here we present for the very first time a single-crystal investigation of the Cu-poor Zn-rich derivative of Cu(2)ZnSnS(4). Nowadays, this composition is considered as the one that delivers the best photovoltaic performances in the specific domain of Cu(2)ZnSnS(4)-based thin-film solar cells. The existence of this nonstoichiometric phase is definitely demonstrated here in an explicit and unequivocal manner on the basis of powder and single-crystal X-ray diffraction analyses coupled with electron microprobe analyses. Crystals are tetragonal, space group I ̅4, Z = 2, with a = 5.43440(15) Å and c = 10.8382(6) Å for Cu(2)ZnSnS(4) and a = 5.43006(5) Å and c = 10.8222(2) Å for Cu(1.71)Zn(1.18)Sn(0.99)S(4). © 2012 American Chemical Society

Functional Performances of CuZnAl Shape Memory Alloy Open-Cell Foams

NASA Astrophysics Data System (ADS)

Biffi, C. A.; Casati, R.; Bassani, P.; Tuissi, A.

2018-01-01

Shape memory alloys (SMAs) with cellular structure offer a unique mixture of thermo-physical-mechanical properties. These characteristics can be tuned by changing the pore size and make the shape memory metallic foams very attractive for developing new devices for structural and functional applications. In this work, CuZnAl SMA foams were produced through the liquid infiltration of space holder method. In comparison, a conventional CuZn brass alloy was foamed trough the same method. Functional performances were studied on both bulk and foamed SMA specimens. Calorimetric response shows similar martensitic transformation (MT) below 0 °C. Compressive response of CuZnAl revealed that mechanical behavior is strongly affected by sample morphology and that damping capacity of metallic foam is increased above the MT temperatures. The shape memory effect was detected in the CuZnAl foams. The conventional brass shows a compressive response similar to that of the martensitic CuZnAl, in which plastic deformation accumulation occurs up to the cellular structure densification after few thermal cycles.

Effects of annealing on the ferromagnetism and photoluminescence of Cu-doped ZnO nanowires.

PubMed

Xu, H J; Zhu, H C; Shan, X D; Liu, Y X; Gao, J Y; Zhang, X Z; Zhang, J M; Wang, P W; Hou, Y M; Yu, D P

2010-01-13

Room temperature ferromagnetic Cu-doped ZnO nanowires have been synthesized using the chemical vapor deposition method. By combining structural characterizations and comparative annealing experiments, it has been found that both extrinsic (CuO nanoparticles) and intrinsic (Zn(1-x)Cu(x)O nanowires) sources are responsible for the observed ferromagnetic ordering of the as-grown samples. As regards the former, annealing in Zn vapor led to a dramatic decrease of the ferromagnetism. For the latter, a reversible switching of the ferromagnetism was observed with sequential annealings in Zn vapor and oxygen ambience respectively, which agreed well with previous reports for Cu-doped ZnO films. In addition, we have for the first time observed low temperature photoluminescence changed with magnetic properties upon annealing in different conditions, which revealed the crucial role played by interstitial zinc in directly mediating high T(c) ferromagnetism and indirectly modulating the Cu-related structured green emission via different charge transfer transitions.

Trace elements in farmed fish (Cyprinus carpio, Ctenopharyngodon idella and Oncorhynchus mykiss) from Beijing: implication from feed.

PubMed

Jiang, Haifeng; Qin, Dongli; Mou, Zhenbo; Zhao, Jiwei; Tang, Shizhan; Wu, Song; Gao, Lei

2016-06-01

Concentrations of 30 trace elements, Li, V, Cr, Mn, Fe, Ni, Cu, Mo, Zn, Se, Sr, Co, Al, Ti, As, Cs, Sc, Te, Ba, Ga, Pb, Sn, Cd, Sb, Ag, Tm, TI, Be, Hg and U in major cultured freshwater fish species (common carp-Cyprinus carpio, grass carp-Ctenopharyngodon idella and rainbow trout-Oncorhynchus mykiss) with the corresponding feed from 23 fish farms in Beijing, China, were investigated. The results revealed that Fe, Zn, Cu, Mn, Sr, Se were the major accumulated essential elements and Al, Ti were the major accumulated non-essential elements, while Mo, Co, Ga, Sn, Cd, Sb, Ag, Tm, U, TI, Be, Te, Pb and Hg were hardly detectable. Contents of investigated trace elements were close to or much lower than those in fish from other areas in China. Correlation analysis suggested that the elemental concentrations in those fish species were relatively constant and did not vary much with the fish feed. In comparison with the limits for aquafeeds and fish established by Chinese legislation, Cd in 37.5% of rainbow trout feeds and As in 20% of rainbow trout samples exceeded the maximum limit, assuming that inorganic As accounts for 10% of total As. Further health risk assessment showed that fish consumption would not pose risks to consumers as far as non-essential element contaminants are concerned. However, the carcinogenic risk of As in rainbow trout for the inhabitants in Beijing exceeded the acceptable level of 10(-)(4), to which more attention should be paid.

Electronic Structure and Optical Properties of Cu 2ZnGeSe 4. First-Principles Calculations and Vacuum-Ultraviolet Spectroscopic Ellipsometric Studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Sukgeun; Park, Ji-Sang; Donohue, Andrea

2015-11-19

Cu 2ZnGeSe 4 is of interest for the development of next-generation thin-film photovoltaic technologies. To understand its electronic structure and related fundamental optical properties, we perform first-principles calculations for three structural variations: kesterite, stannite, and primitive-mixed CuAu phases. The calculated data are compared with the room-temperature dielectric functionϵ=ϵ1+iϵ2 spectrum of polycrystalline Cu 2ZnGeSe 4 determined by vacuum-ultraviolet spectroscopic ellipsometry in the photon-energy range of 0.7 to 9.0 eV. Ellipsometric data are modeled with the sum of eight Tauc-Lorentz oscillators, and the best-fit model yields the band-gap and Tauc-gap energies of 1.25 and 1.19 eV, respectively. A comparison of overall peakmore » shapes and relative intensities between experimental spectra and the calculated ϵ data for three structural variations suggests that the sample may not have a pure (ordered) kesterite phase. We found that the complex refractive index N=n+ik, normal-incidence reflectivity R, and absorption coefficients α are calculated from the modeled ϵ spectrum, which are also compared with those of Cu 2ZnSnSe 4 . The spectral features for Cu 2ZnGeSe 4 appear to be weaker and broader than those for Cu 2ZnSnSe 4 , which is possibly due to more structural imperfections presented in Cu 2ZnGeSe 4 than Cu 2ZnSnSe 4 .« less

Structural and optical studies on antimony and zinc doped CuInS2 thin films

NASA Astrophysics Data System (ADS)

Ben Rabeh, M.; Chaglabou, N.; Kanzari, M.; Rezig, B.

2009-11-01

The influence of Zn and Sb impurities on the structural, optical and electrical properties of CuInS2 thin films on corning 7059 glass substrates was studied. Undoped and Zn or Sb doped CuInS2 thin films were deposited by thermal evaporation method and annealed in vacuum at temperature of 450 ∘C Undoped thin films were grown from CuInS2 powder using resistively heated tungsten boats. Zn species was evaporated from a thermal evaporator all together to the CuInS2 powder and Sb species was mixed in the starting powders. The amount of the Zn or Sb source was determined to be in the range 0-4 wt% molecular weight compared with the CuInS2 alloy source. The films were studied by means of X-ray diffraction (XRD), Optical reflection and transmission and resistance measurements. The films thicknesses were in the range 450-750 nm. All the Zn: CuInS2 and Sb: CuInS2 thin films have relatively high absorption coefficient between 104 cm-1 and 105 cm-1 in the visible and the near-IR spectral range. The bandgap energies are in the range of 1.472-1.589 eV for Zn: CuInS2 samples and 1.396-1.510 eV for the Sb: CuInS2 ones. The type of conductivity of these films was determined by the hot probe method. Furthermore, we found that Zn and Sb-doped CuInS2 thin films exhibit P type conductivity and we predict these species can be considered as suitable candidates for use as acceptor dopants to fabricate CuInS2-based solar cells.

Enhanced photocatalytic degradation of 2-propanol over macroporous GaN/ZnO solid solution prepared by a novel sol-gel method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lizhong; Ouyang, Shuxin; Ren, Bofan

2015-10-01

Macroporous GaN/ZnO solid solution photocatalyst is synthesized through a novel sol-gel method under mild conditions. The performance of as-synthesized solid solution photocatalyst is evaluated for decomposition of gaseous 2-propanol (IPA). It is found that due to enhancement in both the adsorption to gaseous IPA and the absorbance to visible light, the porous GaN/ZnO solid solution exhibits a good photocatalytic performance for IPA decomposition. Moreover, the mechanism for photocatalytic degradation IPA over porous GaN/ZnO solid solution is also investigated in comparison with those for the two end materials ZnO and GaN. The trapping effects with different scavengers prove that both themore » photoexcited electrons and holes affect the IPA photodegradation process, simultaneously.« less

A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime

NASA Astrophysics Data System (ADS)

Yu, Fei; Ma, Xiaoyu; Deng, Wanling; Liou, Juin J.; Huang, Junkai

2017-11-01

A physics-based drain current compact model for amorphous InGaZnO (a-InGaZnO) thin-film transistors (TFTs) is proposed. As a key feature, the surface potential model accounts for both exponential tail and deep trap densities of states, which are essential to describe a-InGaZnO TFT electrical characteristics. The surface potential is solved explicitly without the process of amendment and suitable for circuit simulations. Furthermore, based on the surface potential, an explicit closed-form expression of the drain current is developed. For the cases of the different operational voltages, surface potential and drain current are verified by numerical results and experimental data, respectively. As a result, our model can predict DC characteristics of a-InGaZnO TFTs.

Synthesis of p-type GaN nanowires.

PubMed

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Ba3CuOs2O9 and Ba3ZnOs2O9, a comparative study

NASA Astrophysics Data System (ADS)

Feng, Hai L.; Jansen, Martin

2018-02-01

Polycrystalline samples of Ba3CuOs2O9 and Ba3ZnOs2O9 were synthesized by solid-state reactions. Ba3CuOs2O9 crystallizes in Cmcm, while Ba3ZnOs2O9 adopts the hexagonal space group P63/mmc. Both the crystal structures consist of face-sharing Os-centered octahedra forming dimer-like Os2O9 units, which are interconnected by corner-sharing CuO6, or ZnO6 octahedra, respectively. In Ba3CuOs2O9, the CuO6 octahedra show a characteristic Jahn-Teller distortion. Both, Ba3CuOs2O9 and Ba3ZnOs2O9, are electrically insulating. Magnetic and specific heat measurements confirm that Ba3CuOs2O9 is antiferromagnetically ordered below 47 K. Analysis of the magnetic data indicated that its magnetic properties are dominated by Cu2+ ions. The magnetic susceptibility of Ba3ZnOs2O9 is weakly temperature-dependent with a broad maximum ≈ 280 K, indicating the presence of strong exchange interactions within the Os2O9 dimer. The residual magnetic susceptibility at low temperatures also suggests the presence of appreciable exchange coupling between the dimers.

The chemisorption and reactions of formic acid on Cu films on ZnO (000 overline1)-O

NASA Astrophysics Data System (ADS)

Ludviksson, A.; Zhang, R.; Campbell, Charles T.; Griffiths, K.

1994-06-01

The adsorption and reactions of formic acid (HCOOD : HCOOH = 3:1) on the oxygen-terminated ZnO(0001¯)-O surface and on thin Cu films deposited on the ZnO(0001¯)-O surface have been studied with temperature programmed desorption (TPD) and XPS. Small amounts of formic acid dissociate at defect sites on clean ZnO(0001¯)-O to yield surface formate (HCOO). The acid D(H) from this dissociation does not reappear in TPD, and is lost to the ZnO bulk, as confirmed by nuclear reaction analysis. The surface HCOO decomposes to yield nearly simultaneous CO 2 (37%), CO (63%) and H 2 TPD peaks at 560 K. Substantial amounts of D (˜ 20%) are incorporated in this hydrogen TPD peak resulting from formate decomposition at ZnO defects, indicating that bulk D is readily accessible. Submonolayer and multilayer Cu films that are deposited at 130 K and partially cover the ZnO surface as 2D and 3D islands adsorb formic acid and decompose it into formate and hydrogen much like the Cu(110) surface. The surface formate from the Cu film decomposes at 470-500 K to give primarily CO 2 and H 2, also much like Cu(110), although atom-thin Cu islands also give ˜ 40% CO. Annealed Cu films give formate decomposition peaks at 25-50 K lower in temperature, attributed to thickening and ordering of the Cu islands to form Cu(111)-like sites. The acid D(H) atom from the formic acid is partially lost by hydrogen spillover from the Cu islands into the ZnO substrate, especially for thin Cu films. This effect partially desorbs and is enhanced upon preannealing the Cu layers, due to increased H diffusion rates across the annealed Cu islands, and/or the decrease in island size. Bulk D(H) is slowly removed as D 2, HD and H 2 above 400 K in diffusion-limited desorption, catalyzed by Cu.

Nucleoside-2',3'/3',5'-bis(thio)phosphate antioxidants are also capable of disassembly of amyloid beta42-Zn(ii)/Cu(ii) aggregates via Zn(ii)/Cu(ii)-chelation.

PubMed

Hevroni, Bosmat Levi; Major, Dan Thomas; Dixit, Mudit; Mhashal, Anil Ranu; Das, Susanta; Fischer, Bilha

2016-05-18

Currently, there is an urgent need for biocompatible metal-ion chelators capable of antioxidant activity and disassembly of amyloid beta (Aβ)-aggregates as potential therapeutics for Alzheimer's disease (AD). We recently demonstrated the promising antioxidant activity of adenine/guanine 2',3' or 3',5'-bis(thio)phosphate analogues, 2'-dA/G3'5'PO/S and A2'3'PO/S, and their affinity to Zn(ii)-ions. These findings encouraged us to evaluate them as agents for the dissolution of Aβ42-Zn(ii)/Cu(ii) aggregates. Specifically, we explored their ability to bind Cu(ii)/Zn(ii)-ions, the geometry and stoichiometry of these complexes, Cu(ii)/Zn(ii)-binding-sites and binding mode, and the ability of these analogues to dissolve Aβ42-Zn(ii)/Cu(ii) aggregates, as well as their effect on the secondary structure of those aggregates. Finally, we identified the most promising agents for dissolution of Aβ42-Zn(ii)/Cu(ii) aggregates. Specifically, we observed the formation of a 1 : 1 complex between 2'-dG3'5'PO and Cu(ii), involving O4 ligands. Zn(ii) was coordinated by both thiophosphate groups of 2'-dA3'5'PS and A2'3'PS involving O2S2 ligands in a 1 : 1 stoichiometry. A2'3'PS dissolves Aβ42-Zn(ii) and Aβ42-Cu(ii) aggregates as effectively as, and 2.5-fold more effectively than EDTA, respectively. Furthermore, 2'-dG3'5'PS and A2'3'PS reverted the Aβ42-M(ii) structure, back to that of the free Aβ42. Finally, cryo-TEM and TEM images confirmed the disassembly of Aβ42 and Aβ42-M(ii) aggregates by A2'3'PS. Hence, 2'-dG3'5'PS and A2'3'PS may serve as promising scaffolds for new AD therapeutics, acting as both effective antioxidants and agents for solubilization of Aβ42-Cu(ii)/Zn(ii) aggregates.

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

NASA Astrophysics Data System (ADS)

Jiang, Fan; Chen, Jingwen; Bi, Han; Li, Luying; Jing, Wenkui; Zhang, Jun; Dai, Jiangnan; Che, Renchao; Chen, Changqing; Gao, Yihua

2018-01-01

Non-polar a-plane n-ZnO/p-AlGaN and n-ZnO/i-ZnO/p-AlGaN heterojunction film light-emitting diodes (LEDs) are fabricated with good crystalline quality. The optical measurements show obvious performance enhancement with i-ZnO layer insertion. Off-axis electron holography reveals a potential drop of ˜1.5 V across the heterojunctions with typical p-n junction characteristics. It is found that the electrostatic potentials are inclined and the corresponding electrostatic fields are opposite to each other in n-ZnO and p-AlGaN regions. The electrostatic fields are mainly attributed to strain induced piezoelectric polarizations. After an insertion of an i-ZnO layer into the p-n heterojunction, comparatively flat electrostatic potential generates in the intrinsic ZnO region and contributes to faster movements of the injected electrons and holes, making the i-ZnO layer more conductive to the radiative recombination with enhanced exciton recombination possibilities and at last the LED performance enhancement.

Study on the effects of Ga-2N high co-doping and preferred orientation on the stability, bandgap and absorption spectrum of ZnO

NASA Astrophysics Data System (ADS)

Hou, Qing-Yu; Li, Wen-Cai; Qu, Ling-Feng; Zhao, Chun-Wang

2017-06-01

Currently, the stability and visible light properties of Ga-2N co-doped ZnO systems have been studied extensively by experimental analysis and theoretical calculations. However, previous theoretical calculations arbitrarily assigned Ga- and 2N-doped sites in ZnO. In addition, the most stable and possible doping orientations of doped systems have not been fully and systematically considered. Therefore, in this paper, the electron structure and absorption spectra of the unit cells of doped and pure systems were calculated by first-principles plane-wave ultrasoft pseudopotential with the GGA+U method. Calculations were performed for pure ZnO, Ga-2N supercells heavily co-doped with Zn1-xGaxO1-yNy (x = 0.03125 - 0.0625, y = 0.0625 - 0.125) under different co-doping orientations and conditions, and the Zn16GaN2O14 interstitial model. The results indicated that under different orientations and constant Ga-2N co-doping concentrations, the systems co-doped with Ga-N atoms vertically oriented to the c-axis and with another N atom located in the nearest-neighboring site exhibited higher stability over the others, thus lowering formation energy and facilitating doping. Moreover, Ga-interstitial- and 2N-co-doped ZnO systems easily formed chemical compounds. Increasing co-doping concentration while the co-doping method remained constant decreased doped system volume and lowered formation energies. Meantime, co-doped systems were more stable and doping was facilitated. The bandgap was also narrower and red shifting of the absorption spectrum was more significant. These results agreed with previously reported experimental results. In addition, the absorption spectra of Ga-interstitial- and 2N-co-doped ZnO both blue shifted in the UV region compared with that of the pure ZnO system.

Plasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes

NASA Astrophysics Data System (ADS)

Leung, Yu Hang; Ng, Alan M. C.; Djurišic, Aleksandra B.; Chan, Wai Kin; Fong, Patrick W. K.; Lui, Hsien Fai; Surya, Charles

2014-03-01

Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.

Copper/zinc and copper/selenium ratios, and oxidative stress as biochemical markers in recurrent aphthous stomatitis.

PubMed

Ozturk, Perihan; Belge Kurutas, Ergul; Ataseven, Arzu

2013-10-01

Recurrent aphthous stomatitis (RAS) is a common oral mucosal disorder characterized by recurrent, painful oral aphthae, and oxidative stress presumably contributes to its pathogenesis. The aim of this study is to scrutinize the relationship between oxidative stress and serum trace elements (copper, Cu; zinc, Zn; selenium, Se), and to evaluate the ratios of Cu/Zn and Cu/Se in this disorder. Patients with RAS (n = 33) and age- and sex-matched healthy control subjects (n = 30) were enrolled in this study. Malondialdehyde (MDA) concentrations in plasma and the activities of superoxide dismutase (SOD1; CuZnSOD), glutathione peroxidase (GPx) and catalase (CAT) in erythrocyte were determined as spectrophotometric. Also, the levels of Se, Zn and Cu in serum were determined on flame and furnace atomic absorption spectrophotometer using Zeeman background correction. Oxidative stress was confirmed by the significant elevation in plasma MDA, and by the significant decrease in CAT, SOD1, and GPx (p < 0.05). When compared to controls, Zn and Se levels were significantly lower in patients, whereas Cu levels was higher in RAS patients than those in controls (p < 0.05). In addition, the correlation results of this study were firstly shown that there were significant and positive correlations between Se-CAT, Se-GPx, and Cu-MDA parameters, but negative correlations between Se-Cu, Se-MDA, Cu-CAT, Cu-SOD1 and Cu-GPx parameters in RAS patients. Furthermore, the ratios of Cu/Zn and Cu/Se were significantly higher in the patients than the control subjects (p < 0.05). Our results indicated that lipid peroxidation associated with the imbalance of the trace elements seems to play a crucial role in the pathogenesis of RAS. Furthermore, the serum Cu/Zn and Cu/Se ratios may be used as biochemical markers in these patients. Crown Copyright © 2013. Published by Elsevier GmbH. All rights reserved.

Tuning Bandgap of p-Type Cu2Zn(Sn, Ge)(S, Se)4 Semiconductor Thin Films via Aqueous Polymer-Assisted Deposition.

PubMed

Yi, Qinghua; Wu, Jiang; Zhao, Jie; Wang, Hao; Hu, Jiapeng; Dai, Xiao; Zou, Guifu

2017-01-18

Bandgap engineering of kesterite Cu 2 Zn(Sn, Ge)(S, Se) 4 with well-controlled stoichiometric composition plays a critical role in sustainable inorganic photovoltaics. Herein, a cost-effective and reproducible aqueous solution-based polymer-assisted deposition approach is developed to grow p-type Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films with tunable bandgap. The bandgap of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films can be tuned within the range 1.05-1.95 eV using the aqueous polymer-assisted deposition by accurately controlling the elemental compositions. One of the as-grown Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films exhibits a hall coefficient of +137 cm 3 /C. The resistivity, concentration and carrier mobility of the Cu 2 ZnSn(S, Se) 4 thin film are 3.17 ohm·cm, 4.5 × 10 16 cm -3 , and 43 cm 2 /(V·S) at room temperature, respectively. Moreover, the Cu 2 ZnSn(S, Se) 4 thin film when used as an active layer in a solar cell leads to a power conversion efficiency of 3.55%. The facile growth of Cu 2 Zn(Sn, Ge)(S, Se) 4 thin films in an aqueous system, instead of organic solvents, provides great promise as an environmental-friendly platform to fabricate a variety of single/multi metal chalcogenides for the thin film industry and solution-processed photovoltaic devices.

Identification of copper/zinc superoxide dismutase as a novel nitric oxide-regulated gene in rat glomerular mesangial cells and kidneys of endotoxemic rats.

PubMed

Frank, S; Zacharowski, K; Wray, G M; Thiemermann, C; Pfeilschifter, J

1999-05-01

To define the mechanism of nitric oxide (NO) action in the glomerulus, we attempted to identify genes that are regulated by NO in rat glomerular mesangial cells. We identified a Cu/Zn superoxide dismutase (SOD) that was strongly induced in these cells by treatment with S-nitroso-glutathione as a NO-donating agent. Bacterial lipopolysaccharide (LPS) acutely decreased Cu/Zn SOD mRNA levels. The LPS-mediated decrease in Cu/Zn SOD is reversed by endogenously produced NO, as LPS also induced a delayed strong iNOS expression in these cells in vitro, which is accompanied by increased Cu/Zn SOD expression. NO dependency of Cu/Zn SOD mRNA recovery could be demonstrated by inhibition of this process by L-NG-monomethylarginine, an inhibitor of NOS enzymatic activity. To demonstrate the in vivo relevance of our observations, we have chosen LPS-treated rats as a model for induction of a systemic inflammatory response. In these animals, we demonstrate a direct coupling of Cu/Zn SOD expression levels to the presence of NO, as Cu/Zn SOD mRNA levels declined during acute inflammation in the presence of a selective inhibitor of iNOS. We propose that the up-regulation of Cu/Zn SOD by endogenous NO may serve as an adaptive, protective mechanism to prevent the formation of toxic quantities of peroxynitrite in conditions associated with iNOS induction during endotoxic shock.

Cooperative cytotoxic activity of Zn and Cu in bovine serum albumin-conjugated ZnS/CuS nano-composites in PC12 cancer cells

NASA Astrophysics Data System (ADS)

Wang, Hua-Jie; Yu, Xue-Hong; Wang, Cai-Feng; Cao, Ying

2013-11-01

Series of self-assembled and mono-dispersed bovine serum albumin (BSA)-conjugated ZnS/CuS nano-composites with different Zn/Cu ratios had been successfully synthesized by a combination method of the biomimetic synthesis and ion-exchange strategy under the gentle conditions. High-resolution transmission electron microscopy observation, Fourier transform infrared spectra and zeta potential analysis demonstrated that BSA-conjugated ZnS/CuS nano-composites with well dispersity had the hierarchical structure and BSA was a key factor to control the morphology and surface electro-negativity of final products. The real-time monitoring by atomic absorption spectroscopy and powder X-ray diffraction revealed that the Zn/Cu ratio of nano-composites could be controlled by adjusting the ion-exchange time. In addition, the metabolic and morphological assays indicated that the metabolic proliferation and spread of rat pheochromocytoma (PC12) cells could be inhibited by nano-composites, with the high anti-cancer activity at a low concentration (4 ppm). What were more important, Zn and Cu in nano-composites exhibited a positive cooperativity at inhibiting cancer cell functions. The microscope observation and biochemical marker analysis clearly revealed that the nano-composites-included lipid peroxidation and disintegration of membrane led to the death of PC12 cells. Summarily, the present study substantiated the potential of BSA-conjugated ZnS/CuS nano-composites as anti-cancer drug.

Influence of trace elements mixture on bacterial diversity and fermentation characteristics of liquid diet fermented with probiotics under air-tight condition.

PubMed

He, Yuyong; Chen, Zhiyu; Liu, Xiaolan; Wang, Chengwei; Lu, Wei

2014-01-01

Cu2+, Zn2+, Fe2+ and I- are often supplemented to the diet of suckling and early weaning piglets, but little information is available regarding the effects of different Cu2+, Zn2+, Fe2+ and I- mixtures on bacteria growth, diversity and fermentation characteristics of fermented liquid diet for piglets. Pyrosequencing was performed to investigate the effect of Cu2+, Zn2+, Fe2+ and I- mixtures on the diversity, growth and fermentation characteristics of bacteria in the liquid diet fermented with Bacillus subtilis and Enterococcus faecalis under air-tight condition. Results showed that the mixtures of Cu2+, Zn2+, Fe2+ and I- at different concentrations promoted Bacillus growth, increased bacterial diversity and lactic acid production and lowered pH to about 5. The importance of Cu2+, Zn2+, Fe2+ and I- is different for Bacillus growth with the order Zn2+> Fe2+>Cu2+> I- in a 21-d fermentation and Cu2+>I->Fe2+>Zn2+ in a 42-d fermentation. Cu2+, Zn2+, Fe2+ and I- is recommended at a level of 150, 60, 150 and 0.6 mg/kg respectively for the production of fermented liquid diet with Bacillus subtilis. The findings improve our understanding of the influence of trace elements on liquid diet fermentation with probiotics and support the proper use of trace elements in the production of fermented liquid diet for piglets.

Optical absorption and disorder in delafossites

DOE PAGES

Senty, Tess R.; Haycock, Barry; Lekse, Jonathan; ...

2017-07-06

Here, we present compelling experimental results of the optical characteristics of transparent oxide CuGaO 2 and related CuGa 1-xFe xO 2 (with 0.00 ≤ x ≤ 0.05) alloys, whereby the forbidden electronic transitions for CuGaO 2 become permissible in the presence of B-site (Ga sites) alloying with Fe. Our computational structural results imply a correlation between the global strain on the system and a decreased optical absorption edge. However, herein, we show that the relatively ordered CuGa 1-xFe xO 2 (for 0.00 ≤ x ≤ 0.04) structures exhibit much weaker vis-absorption compared to the relatively disordered CuGa 0.95Fe 0.05O 2.

Chalcophile and siderophile elements in sulphide inclusions in eclogitic diamonds and metal cycling in a Paleoproterozoic subduction zone

NASA Astrophysics Data System (ADS)

Aulbach, Sonja; Stachel, Thomas; Seitz, Hans-Michael; Brey, Gerhard P.

2012-09-01

In the central Slave craton, eclogitic diamonds are suggested to have formed during Paleoproterozoic subduction in a meta-gabbroic substrate representing former lower oceanic crust that interacted with serpentinite-derived fluids at high fluid-rock ratios. In order to assess the behaviour of chalcophile and siderophile elements (CSE) during this process, we measured trace-element concentrations of sulphide inclusions in diamonds from the Diavik mine by laser ablation ICPMS. The nitrogen systematics of the diamonds (average N concentration of ˜600 ppm and aggregation state 4% N as B-aggregates) indicate average mantle residence temperatures of ˜1050 °C for a 1.85 Ga formation age, corresponding ˜170 km depth. Based on the available evidence from natural samples and experiments, we suggest that the highly siderophile elements (HSE: Os, Ir, Ru, Rh, Pd, Pt, Re) except Au behaved largely conservatively during fluid-induced metamorphism, which may point to a reducing and Cl-poor nature of the fluid. The abundances of the moderately siderophile and chalcophile elements Cr, Co, Ni, Cu, Ag, Sn, Mo and W may also have changed little, whereas As, Sb, Tl, Pb and Bi may have been mobilised from the subducting lower oceanic crust. The partitioning of CSE in eclogite and geochemical behaviour during oceanic crust formation was assessed for inferred conservative elements. Assuming an average sulphide mode of 0.3 wt.% for the oceanic crust, its abundances of HSE, Cu, Mo, Se and Te can mostly be accounted for by sulphide minerals alone. Lithophile behaviour of W, Cd, In and Sn and enrichment in residual melts may explain their lower abundances in the gabbroic eclogitic sulphide inclusions compared to MORB sulphide. These elements, as well as Cr, Co, Ni, Zn and Ga require additional host phases both in eclogite, where rutile partitions significant amounts of Cr, Zn, W, Ga and Sn, and in the oceanic crust.

Effect of short term oral cadmium exposure in rats fed low zinc and low copper diets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Panemangalore, M.; Lee, C.J.; Wilson, K.

1986-03-05

The effects of 0, 0.15 and 5.0 ppm Cd in drinking water was determined in 10 week old F-344 rats fed either control - C (30 ppm Zn + 5 ppm Cu), low Zn - LZn (5 ppm Zn), low copper - LCu (0.5 ppm Cu) and low Zn + low Cu - LZn + LCu (5 ppm Zn + 0.5 ppm Cu) diets for 8 weeks. All groups gained about 9 g/wk and neither the decrease in dietary Zn and Cu levels or Cd exposure altered wt gain or food intake (14 g/day). Liver Zn levels averaged about 19more » mg/g in all groups and were unaffected by either diet or Cd exposure; but metallothionein (MT) concentration increased from 19..mu..g/g to 40 ..mu..g/g in groups exposed to 5.0 ppm Cd and was lower in rats given LZn and LZn + LCu diet (pless than or equal to0.05). In contrast, kidney Zn levels declined in groups fed LZn + LCu diets, but exposure to Cd maintained Zn levels. Kidney MT concentration fell in response to LZn, LCu and LZn + LCu diets, while exposure to 5.0 ppm Cd elevated MT concentration almost 3 fold, however, LZn and LCu diets decreased the extent of MT induction (pless than or equal to0.05). Kidney Zn levels appear to be more susceptible to modulation by dietary Zn and Cu levels, and oral Cd exposure.« less

Detailed Visualization of Phase Evolution during Rapid Formation of Cu(InGa)Se2 Photovoltaic Absorber from Mo/CuGa/In/Se Precursors.

PubMed

Koo, Jaseok; Kim, Sammi; Cheon, Taehoon; Kim, Soo-Hyun; Kim, Woo Kyoung

2018-03-02

Amongst several processes which have been developed for the production of reliable chalcopyrite Cu(InGa)Se 2 photovoltaic absorbers, the 2-step metallization-selenization process is widely accepted as being suitable for industrial-scale application. Here we visualize the detailed thermal behavior and reaction pathways of constituent elements during commercially attractive rapid thermal processing of glass/Mo/CuGa/In/Se precursors on the basis of the results of systematic characterization of samples obtained from a series of quenching experiments with set-temperatures between 25 and 550 °C. It was confirmed that the Se layer crystallized and then melted between 250 and 350 °C, completely disappearing at 500 °C. The formation of CuInSe 2 and Cu(InGa)Se 2 was initiated at around 450 °C and 550 °C, respectively. It is suggested that pre-heat treatment to control crystallization of Se layer should be designed at 250-350 °C and Cu(InGa)Se 2 formation from CuGa/In/Se precursors can be completed within a timeframe of 6 min.

Assessment of heavy metal contamination in Hediste diversicolor (O.F. Müller, 1776), Mugil cephalus (Linnaeus, 1758), and surface sediments of Bafa Lake (Eastern Aegean).

PubMed

Aydin-Onen, S; Kucuksezgin, F; Kocak, F; Açik, S

2015-06-01

In the present study, the bioaccumulation of six heavy metals (Cd, Cr, Cu, Hg, Pb, and Zn) in Hediste (Nereis) diversicolor (O.F. Müller, 1776) and also in the muscle and liver of Mugil cephalus (Linnaeus, 1758) collected from seven stations in the Bafa Lake was investigated. Sediment samples were also collected in each site to assess heavy metal levels and to provide additional information on pollution of the lake. The mean concentrations of heavy metals in sediment, H. diversicolor, and muscle and liver of the fish were found to be in the magnitude of Cr>Pb>Zn>Cu>Cd>Hg, Zn>Cu>Cr>Pb>Hg>Cd, Zn>Cu>Pb>Cr >Hg>Cd, and Cu>Zn>Cr>Cd>Pb>Hg, respectively. Hg, Cu, and Zn in H. diversicolor and Hg and Zn in muscle and also Hg, Cd, Cu, and Zn in liver of fish accumulated in a higher degree than in sediment. There was no clear relationship between metal concentrations in sediments, polychaetes, and fish, except Cr. According to international criteria and Turkish regulations, Pb and Zn values in edible muscle of the fish collected from stations S6 and S5 exceeded the food safety limits, respectively. The results of this study suggest that these sentinel species can be considered as good anthropogenic biological indicators for heavy metal pollution along the Bafa Lake.

Effects of zinc addition to a copper-contaminated vineyard soil on sorption of Zn by soil and plant physiological responses.

PubMed

Tiecher, Tadeu L; Ceretta, Carlos A; Tiecher, Tales; Ferreira, Paulo A A; Nicoloso, Fernando T; Soriani, Hilda H; Rossato, Liana V; Mimmo, Tanja; Cesco, Stefano; Lourenzi, Cledimar R; Giachini, Admir J; Brunetto, Gustavo

2016-07-01

The occurrence of high levels of Cu in vineyard soils is often the result of intensive use of fungicides for the preventive control of foliar diseases and can cause toxicity to plants. Nowadays many grape growers in Southern Brazil have replaced Cu-based with Zn-based products. The aim of the study was to evaluate whether the increase in Zn concentration in a soil with high Cu contents can interfere with the dynamics of these elements, and if this increase in Zn may cause toxicity to maize (Zea mays L.). Soil samples were collected in two areas, one in a vineyard with more than 30 years of cultivation and high concentration of Cu and the other on a natural grassland area adjacent to the vineyard. Different doses of Cu and Zn were added to the soil, and the adsorption isotherms were built following the Langmuir's model. In a second experiment, the vineyard soil was spiked with different Zn concentrations (0, 30, 60, 90, 180, and 270mg Zn kg(-1)) in 3kg pots where maize was grown in a greenhouse for 35 days. When Cu and Zn were added together, there was a reduction in the quantities adsorbed, especially for Zn. Zn addition decreased the total plant dry matter and specific leaf mass. Furthermore, with the increase in the activity of catalase, an activation of the antioxidant system was observed. However, the system was not sufficiently effective to reverse the stress levels imposed on soil, especially in plants grown in the highest doses of Zn. At doses higher than 90Znmgkg(-1) in the Cu-contaminated vineyard soil, maize plants were no longer able to activate the protection mechanism and suffered from metal stress, resulting in suppressed dry matter yields due to impaired functioning of the photosynthetic apparatus and changes in the enzymatic activity of plants. Replacement of Cu- by Zn-based fungicides to avoid Cu toxicity has resulted in soil vineyards contaminated with these metals and damaging of plant photosynthetic apparatus and enzyme activity. Copyright © 2016 Elsevier Inc. All rights reserved.

Separation of copper, iron, and zinc from complex aqueous solutions for isotopic measurement

USGS Publications Warehouse

Borrok, D.M.; Wanty, R.B.; Ridley, W.I.; Wolf, R.; Lamothe, P.J.; Adams, M.

2007-01-01

The measurement of Cu, Fe, and Zn isotopes in natural samples may provide valuable information about biogeochemical processes in the environment. However, the widespread application of stable Cu, Fe, and Zn isotope chemistry to natural water systems remains limited by our ability to efficiently separate these trace elements from the greater concentrations of matrix elements. In this study, we present a new method for the isolation of Cu, Fe, and Zn from complex aqueous solutions using a single anion-exchange column with hydrochloric acid media. Using this method we are able to quantitatively separate Cu, Fe, and Zn from each other and from matrix elements in a single column elution. Elution of the elements of interest, as well as all other elements, through the anion-exchange column is a function of the speciation of each element in the various concentrations of HCl. We highlight the column chemistry by comparing our observations with published studies that have investigated the speciation of Cu, Fe, and Zn in chloride solutions. The functionality of the column procedure was tested by measuring Cu, Fe, and Zn isotopes in a variety of stream water samples impacted by acid mine drainage. The accuracy and precision of Zn isotopic measurements was tested by doping Zn-free stream water with the Zn isotopic standard. The reproducibility of the entire column separation process and the overall precision of the isotopic measurements were also evaluated. The isotopic results demonstrate that the Cu, Fe, and Zn column separates from the tested stream waters are of sufficient purity to be analyzed directly using a multicollector inductively coupled plasma mass spectrometer (MC-ICP-MS), and that the measurements are fully-reproducible, accurate, and precise. Although limited in scope, these isotopic measurements reveal significant variations in ??65Cu (- 1.41 to + 0.30???), ??56Fe (- 0.56 to + 0.34???), and ??66Zn (0.31 to 0.49???) among samples collected from different abandoned mines within a single watershed. Hence, Cu, Fe, and Zn isotopic measurements may be a powerful tool for fingerprinting specific metal sources and/or examining biogeochemical reactions within fresh water systems.

A simulation study to improve the efficiency of ZnO1-xSx/Cu2ZnSn (Sy, Se1-y)4 solar cells by composition-ratio control

NASA Astrophysics Data System (ADS)

Sharbati, S.; Norouzzadeh, E.; Mohammadi, S.

2018-04-01

This work investigates the impact of the conduction-band offset (CBO) and valence band offset (VBO) on the performance of Zn (O, S)/Cu2ZnSn (S, Se)4 solar cells by numerical simulations. The band gap alignment at the buffer-CZTS layer interface are controlled by the sulfur-to-oxygen and sulfur-to-selenium ratios. The simulation results show that the high sulfur content in the Zn (O, S) layer makes a big offset in the conduction band and high oxygen content in the in the Zn (O, S) layer eventuates in large valence band offset, that descends Cu2ZnSn (S, Se)4 solar cell performance. We established an initial device model based on an experimental device with world record efficiencies of 12.6%. This study shows that most suitable heterojunction for ZnO1-xSx/Cu2ZnSn (Sy, Se1-y)4 solar cells is when sulfur content ranging 19%-50% in the Zn (O, S) and 30%-50% in the CZTSSe. The efficiency of Cu2ZnSn (S, Se)4 solar cells will be achieved to 14.3%.

Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

NASA Astrophysics Data System (ADS)

AlHammad, M. S.

2017-05-01

We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.