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Sample records for cu-10cr-3ag electrical contacts

  1. ELECTRIC CONTACT MEANS

    DOEpatents

    Grear, J.W. Jr.

    1959-03-10

    A switch adapted to maintain electrical connections under conditions of vibration or acceleration is described. According to the invention, thc switch includes a rotatable arm carrying a conductive bar arranged to close against two contacts spaced in the same plane. The firm and continuous engagement of the conductive bar with the contacts is acheived by utilizeing a spring located betwenn the vbar and athe a rem frzme and slidable mounting the bar in channel between two arms suspendef from the arm frame.

  2. Electrical contact resistance in filaments

    NASA Astrophysics Data System (ADS)

    Wu, Xiang-Fa; Zhou, Zhengping; Zhou, Wang-Min

    2012-05-01

    Electrical contact resistance (ECR) influences the electrochemical performance of porous electrodes made of stacked discrete materials (e.g., carbon nanotubes, nanofibers, etc.) for use in supercapacitors and rechargeable batteries. This study establishes a simple elasticity-conductivity model for the ECR of filaments in adhesive contact. The elastic deformation and size of electrical contact zone of the filaments are determined by using an adhesive contact model of filaments, and the ECR of adhesive filaments is obtained in explicit form. Dependencies of the ECR upon the filament geometries, surface energy, and elasticity are examined.

  3. Electrical contact tool set station

    DOEpatents

    Byers, M.E.

    1988-02-22

    An apparatus is provided for the precise setting to zero of electrically conductive cutting tools used in the machining of work pieces. An electrically conductive cylindrical pin, tapered at one end to a small flat, rests in a vee-shaped channel in a base so that its longitudinal axis is parallel to the longitudinal axis of the machine's spindle. Electronic apparatus is connected between the cylindrical pin and the electrically conductive cutting tool to produce a detectable signal when contact between tool and pin is made. The axes of the machine are set to zero by contact between the cutting tool and the sides, end or top of the cylindrical pin. Upon contact, an electrical circuit is completed, and the detectable signal is produced. The tool can then be set to zero for that axis. Should the tool contact the cylindrical pin with too much force, the cylindrical pin would be harmlessly dislodged from the vee-shaped channel, preventing damage either to the cutting tool or the cylindrical pin. 5 figs.

  4. Improved Electrical Contact For Dowhhole Drilling Networks

    DOEpatents

    Hall, David R.; Hall, Jr., H. Tracy; Pixton, David S.; Dahlgren, Scott; Fox, Joe; Sneddon, Cameron

    2005-08-16

    An electrical contact system for transmitting information across tool joints while minimizing signal reflections that occur at the tool joints includes a first electrical contact comprising an annular resilient material. An annular conductor is embedded within the annular resilient material and has a surface exposed from the annular resilient material. A second electrical contact is provided that is substantially equal to the first electrical contact. Likewise, the second electrical contact has an annular resilient material and an annular conductor. The two electrical contacts configured to contact one another such that the annular conductors of each come into physical contact. The annular resilient materials of each electrical contact each have dielectric characteristics and dimensions that are adjusted to provide desired impedance to the electrical contacts.

  5. Thermal and electrical contact conductance studies

    NASA Technical Reports Server (NTRS)

    Vansciver, S. W.; Nilles, M.

    1985-01-01

    Prediction of electrical and thermal contact resistance for pressed, nominally flat contacts is complicated by the large number of variables which influence contact formation. This is reflected in experimental results as a wide variation in contact resistances, spanning up to six orders of magnitude. A series of experiments were performed to observe the effects of oxidation and surface roughness on contact resistance. Electrical contact resistance and thermal contact conductance from 4 to 290 K on OFHC Cu contacts are reported. Electrical contact resistance was measured with a 4-wire DC technique. Thermal contact conductance was determined by steady-state longitudinal heat flow. Corrections for the bulk contribution ot the overall measured resistance were made, with the remaining resistance due solely to the presence of the contact.

  6. Electrical contact arrangement for a coating process

    DOEpatents

    Kabagambe, Benjamin; McCamy, James W; Boyd, Donald W

    2013-09-17

    A protective coating is applied to the electrically conductive surface of a reflective coating of a solar mirror by biasing a conductive member having a layer of a malleable electrically conductive material, e.g. a paste, against a portion of the conductive surface while moving an electrodepositable coating composition over the conductive surface. The moving of the electrodepositable coating composition over the conductive surface includes moving the solar mirror through a flow curtain of the electrodepositable coating composition and submerging the solar mirror in a pool of the electrodepositable coating composition. The use of the layer of a malleable electrically conductive material between the conductive member and the conductive surface compensates for irregularities in the conductive surface being contacted during the coating process thereby reducing the current density at the electrical contact area.

  7. Electrical Contacts in Monolayer Arsenene Devices.

    PubMed

    Wang, Yangyang; Ye, Meng; Weng, Mouyi; Li, Jingzhen; Zhang, Xiuying; Zhang, Han; Guo, Ying; Pan, Yuanyuan; Xiao, Lin; Liu, Junku; Pan, Feng; Lu, Jing

    2017-08-30

    Arsenene, arsenic analogue of graphene, as an emerging member of two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S = 0.33), with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal-induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene-Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.

  8. Contact-independent electrical conductance measurement

    DOEpatents

    Mentzel, Tamar S.; MacLean, Kenneth; Kastner, Marc A.; Ray, Nirat

    2017-01-24

    Electrical conductance measurement system including a one-dimensional semiconducting channel, with electrical conductance sensitive to electrostatic fluctuations, in a circuit for measuring channel electrical current. An electrically-conductive element is disposed at a location at which the element is capacitively coupled to the channel; a midpoint of the element aligned with about a midpoint of the channel, and connected to first and second electrically-conductive contact pads that are together in a circuit connected to apply a changing voltage across the element. The electrically-conductive contact pads are laterally spaced from the midpoint of the element by a distance of at least about three times a screening length of the element, given in SI units as (K.di-elect cons..sub.0/e.sup.2D(E.sub.F)).sup.1/2, where K is the static dielectric constant, .di-elect cons..sub.0 is the permittivity of free space, e is electron charge, and D(E.sub.F) is the density of states at the Fermi energy for the element.

  9. Optical and electrical properties of nanostructured metallic electrical contacts

    NASA Astrophysics Data System (ADS)

    Toranzos, Victor J.; Ortiz, Guillermo P.; Mochán, W. Luis; Zerbino, Jorge O.

    2017-01-01

    We study the optical and electrical properties of silver films with a graded thickness obtained through metallic evaporation in vacuum on a tilted substrate to evaluate their use as semitransparent electrical contacts. We measure their ellipsometric coefficients, optical transmissions and electrical conductivity for different widths, and we employ an efficient recursive method to calculate their macroscopic dielectric function, their optical properties and their microscopic electric fields. The topology of very thin films corresponds to disconnected islands, while very wide films are simply connected. For intermediate widths the film becomes semicontinuous, multiply connected, and its microscopic electric field develops hotspots at optical resonances which appear near the percolation threshold of the conducting phase, yielding large ohmic losses that increase the absorptance above that of a corresponding homogeneous film. Optimizing the thickness of the film to maximize its transmittance above the percolation threshold of the conductive phase we obtained a film with transmittance T  =  0.41 and a sheet resistance Rs\\text{max}≈ 2.7 Ω . We also analyze the observed emission frequency shift of porous silicon electroluminescent devices when Ag films are used as solid electrical contacts in replacement of electrolytic ones.

  10. Graphene-contact electrically driven microdisk lasers

    PubMed Central

    Kim, Yoon-Ho; Kwon, Soon-Hong; Lee, Jung Min; Hwang, Min-Soo; Kang, Ju-Hyung; Park, Won Il; Park, Hong-Gyu

    2012-01-01

    Active nanophotonic devices are attractive due to their low-power consumption, ultrafast modulation speed and high-density integration. Although electrical operation is required for practical implementation of these devices, it is not straightforward to introduce a proper current path into such a wavelength-scale nanostructure without affecting the optical properties. For example, to demonstrate electrically driven nanolasers, complicated fabrication techniques have been used thus far. Here we report an electrically driven microdisk laser using a transparent graphene electrode. Current is injected efficiently through the graphene sheet covering the top surface of the microdisk cavity, and, for the first time, lasing operation was achieved with a low-threshold current of ~300 μA at room temperature. In addition, we measured significant electroluminescence from a graphene-contact subwavelength-scale single nanopillar structure. This work represents a new paradigm for the practical applications of integrated photonic systems, by conformally mounting graphene on the complex surfaces of non-planar three-dimensional nanostructures. PMID:23047681

  11. Silicone oil contamination and electrical contact resistance degradation of low-force gold contacts.

    SciTech Connect

    Dugger, Michael Thomas; Dickrell, Daniel John, III

    2006-02-01

    Hot-switched low-force gold electrical contact testing was performed using a nanomechanical test apparatus to ascertain the sensitivity of simulated microelectromechanical systems (MEMS) contact to silicone oil contamination. The observed cyclic contact resistance degradation was dependent on both closure rate and noncontact applied voltage. The decomposition of silicone oil from electrical arcing was hypothesized as the degradation mechanism.

  12. Evaluation of the electrical contact area in contact-mode scanning probe microscopy

    NASA Astrophysics Data System (ADS)

    Celano, Umberto; Hantschel, Thomas; Giammaria, Guido; Chintala, Ravi Chandra; Conard, Thierry; Bender, Hugo; Vandervorst, Wilfried

    2015-06-01

    The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the effective electrical contact area, which exists between tip and sample in contact-AFM electrical measurements. A simple procedure for the evaluation of the effective electrical contact area is described using conductive atomic force microscopy (C-AFM) in combination with a thin dielectric. We characterize the electrical contact area for coated metal and doped-diamond tips operated at low force (<200 nN) in contact mode. In both cases, we observe that only a small fraction (<10 nm2) of the physical contact (˜100 nm2) is effectively contributing to the transport phenomena. Assuming this reduced area is confined to the central area of the physical contact, these results explain the sub-10 nm electrical resolution observed in C-AFM measurements.

  13. Evaluation of the electrical contact area in contact-mode scanning probe microscopy

    SciTech Connect

    Celano, Umberto E-mail: u.celano@gmail.com; Chintala, Ravi Chandra; Vandervorst, Wilfried; Hantschel, Thomas; Giammaria, Guido; Conard, Thierry; Bender, Hugo

    2015-06-07

    The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the effective electrical contact area, which exists between tip and sample in contact-AFM electrical measurements. A simple procedure for the evaluation of the effective electrical contact area is described using conductive atomic force microscopy (C-AFM) in combination with a thin dielectric. We characterize the electrical contact area for coated metal and doped-diamond tips operated at low force (<200 nN) in contact mode. In both cases, we observe that only a small fraction (<10 nm{sup 2}) of the physical contact (∼100 nm{sup 2}) is effectively contributing to the transport phenomena. Assuming this reduced area is confined to the central area of the physical contact, these results explain the sub-10 nm electrical resolution observed in C-AFM measurements.

  14. Electrical Contacts to Individual Colloidal Semiconductor Nanorods

    SciTech Connect

    Trudeau, Paul-Emile; Sheldon, Matt; Altoe, Virginia; Alivisatos, A. Paul

    2008-04-01

    We report the results of charge transport studies on single CdTe nanocrystals contacted via evaporated Pd electrodes. Device charging energy, E{sub c}, monitored as a function of electrode separation drops suddenly at separations below {approx}55 nm. This drop can be explained by chemical changes induced by the metal electrodes. This explanation is corroborated by ensemble X-Ray photoelectron spectroscopy (XPS) studies of CdTe films as well as single particle measurements by transmission electron microscopy (TEM) and energy dispersive X-Rays (EDX). Similar to robust optical behavior obtained when Nanocrystals are coated with a protective shell, we find that a protective SiO2 layer deposited between the nanocrystal and the electrode prevents interface reactions and an associated drop in E{sub c,max}. This observation of interface reactivity and its effect on electrical properties has important implications for the integration of nanocrystals into conventional fabrication techniques and may enable novel nano-materials.

  15. A 3D contact analysis approach for the visualization of the electrical contact asperities

    DOE PAGES

    Roussos, Constantinos C.; Swingler, Jonathan

    2017-01-11

    The electrical contact is an important phenomenon that should be given into consideration to achieve better performance and long term reliability for the design of devices. Based upon this importance, the electrical contact interface has been visualized as a “3D Contact Map” and used in order to investigate the contact asperities. The contact asperities describe the structures above and below the contact spots (the contact spots define the 3D contact map) to the two conductors which make the contact system. The contact asperities require the discretization of the 3D microstructures of the contact system into voxels. A contact analysis approachmore » has been developed and introduced in this paper which shows the way to the 3D visualization of the contact asperities of a given contact system. For the discretization of 3D microstructure of contact system into voxels, X-ray Computed Tomography (CT) method is used in order to collect the data of a 250 V, 16 A rated AC single pole rocker switch which is used as a contact system for investigation.« less

  16. A 3D contact analysis approach for the visualization of the electrical contact asperities

    PubMed Central

    Swingler, Jonathan

    2017-01-01

    The electrical contact is an important phenomenon that should be given into consideration to achieve better performance and long term reliability for the design of devices. Based upon this importance, the electrical contact interface has been visualized as a ‘‘3D Contact Map’’ and used in order to investigate the contact asperities. The contact asperities describe the structures above and below the contact spots (the contact spots define the 3D contact map) to the two conductors which make the contact system. The contact asperities require the discretization of the 3D microstructures of the contact system into voxels. A contact analysis approach has been developed and introduced in this paper which shows the way to the 3D visualization of the contact asperities of a given contact system. For the discretization of 3D microstructure of contact system into voxels, X-ray Computed Tomography (CT) method is used in order to collect the data of a 250 V, 16 A rated AC single pole rocker switch which is used as a contact system for investigation. PMID:28105383

  17. Study of Electrical Contacts and Devices in Advanced Semiconductors

    NASA Technical Reports Server (NTRS)

    Hall, H. P.; Das, K.; Alterovitz, Samuel (Technical Monitor)

    2001-01-01

    Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

  18. Electrical properties of graphene-metal contacts.

    PubMed

    Cusati, Teresa; Fiori, Gianluca; Gahoi, Amit; Passi, Vikram; Lemme, Max C; Fortunelli, Alessandro; Iannaccone, Giuseppe

    2017-07-11

    The performance of devices and systems based on two-dimensional material systems depends critically on the quality of the contacts between 2D material and metal. A low contact resistance is an imperative requirement to consider graphene as a candidate material for electronic and optoelectronic devices. Unfortunately, measurements of contact resistance in the literature do not provide a consistent picture, due to limitations of current graphene technology, and to incomplete understanding of influencing factors. Here we show that the contact resistance is intrinsically dependent on graphene sheet resistance and on the chemistry of the graphene-metal interface. We present a physical model of the contacts based on ab-initio simulations and extensive experiments carried out on a large variety of samples with different graphene-metal contacts. Our model explains the spread in experimental results as due to uncontrolled graphene doping and suggests ways to engineer contact resistance. We also predict an achievable contact resistance of 30 Ω·μm for nickel electrodes, extremely promising for applications.

  19. Evaluation of Contact Separation Force Testing as a Screening Methodology for Electrical Socket Contacts

    NASA Technical Reports Server (NTRS)

    Green, Chris; Greenwell, Chris; Brusse, jay; Krus, Dennis; Leidecker, Henning

    2009-01-01

    During system level testing intermittent and permanent open circuit failures of mated, crimp removable, electrical contact pairs were experienced. The root cause of the failures was determined to be low (but not zero) contact forces applied by the socket contact tines against the engaging pin. The low contact force reduces the effectiveness of the wiping action of the socket tines against the pin. The observed failure mode may be produced when insufficient wiping during mate, demate and small relative movement in use allows for the accumulation of debris or insulating films that electrically separate the contact pair. The investigation identified at least three manufacturing process control problems associated with the socket contacts that enabled shipment of contacts susceptible to developing low contact forces: (1) Improper heat treatment of the socket tines resulting in plastic rather than elastic behavior; (2) Overly thinned socket tines at their base resulting in reduced pin retention forces; (3) insufficient screening tests to identify parts susceptible to the aforementioned failure mechanisms. The results from an extensive screening program of socket contacts utilizing the industry standard contact separation force test procedures are described herein. The investigation shows this method to be capable of identifying initially weak sockets. However, sockets whose contact retention forces may degrade during use may not be screened out by pin retention testing alone. Further investigations are required to correlate low contact retention forces with increased electrical contact resistance in the presence of insulating films that may accumulate in the use environment.

  20. Pulsed Current Static Electrical Contact Experiment

    DTIC Science & Technology

    2006-05-01

    between 6061-T6 aluminum and copper ( Glidcop AL - 25 ) during a 40 kA current pulse for two different force levels is shown in Fig. 7. For the 0.445 kN...as a function of initial contact pressures, current density, and polarity for dissimilar ( Al /Cu) metal contacts. Thermal effects on the surfaces...International Symposium on Electromagnetic Launch Technology (EML), Held May 22 - 25 , 2006 in Potsdam, Brandenburg, Germany Copyright 2006 IEEE. Published in

  1. Experimental investigation on the electrical contact behavior of rolling contact connector

    SciTech Connect

    Chen, Junxing; Yang, Fei Luo, Kaiyu; Zhu, Mingliang; Wu, Yi; Rong, Mingzhe

    2015-12-15

    Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigate the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.

  2. Experimental investigation on the electrical contact behavior of rolling contact connector

    NASA Astrophysics Data System (ADS)

    Chen, Junxing; Yang, Fei; Luo, Kaiyu; Zhu, Mingliang; Wu, Yi; Rong, Mingzhe

    2015-12-01

    Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigate the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.

  3. Experimental investigation on the electrical contact behavior of rolling contact connector.

    PubMed

    Chen, Junxing; Yang, Fei; Luo, Kaiyu; Zhu, Mingliang; Wu, Yi; Rong, Mingzhe

    2015-12-01

    Rolling contact connector (RCC) is a new technology utilized in high performance electric power transfer systems with one or more rotating interfaces, such as radars, satellites, wind generators, and medical computed tomography machines. Rolling contact components are used in the RCC instead of traditional sliding contacts to transfer electrical power and/or signal. Since the requirement of the power transmission is increasing in these years, the rolling electrical contact characteristics become more and more important for the long-life design of RCC. In this paper, a typical form of RCC is presented. A series of experimental work are carried out to investigate the rolling electrical contact characteristics during its lifetime. The influence of a variety of factors on the electrical contact degradation behavior of RCC is analyzed under both vacuum and air environment. Based on the surface morphology and elemental composition changes in the contact zone, which are assessed by field emission scanning electron microscope and confocal laser scanning microscope, the mechanism of rolling electrical contact degradation is discussed.

  4. Evaluation of metal-nanowire electrical contacts by measuring contact end resistance

    NASA Astrophysics Data System (ADS)

    Park, Hongsik; Beresford, Roderic; Ha, Ryong; Choi, Heon-Jin; Shin, Hyunjung; Xu, Jimmy

    2012-06-01

    It is known, but often unappreciated, that the performance of nanowire (NW)-based electrical devices can be significantly affected by electrical contacts between electrodes and NWs, sometimes to the extent that it is really the contacts that determine the performance. To correctly understand and design NW device operation, it is thus important to carefully measure the contact resistance and evaluate the contact parameters, specific contact resistance and transfer length. A four-terminal pattern or a transmission line model (TLM) pattern has been widely used to measure contact resistance of NW devices and the TLM has been typically used to extract contact parameters of NW devices. However, the conventional method assumes that the electrical properties of semiconducting NW regions covered by a metal are not changed after electrode formation. In this study, we report that the conventional methods for contact evaluation can give rise to considerable errors because of an altered property of the NW under the electrodes. We demonstrate that more correct contact resistance can be measured from the TLM pattern rather than the four-terminal pattern and correct contact parameters including the effects of changed NW properties under electrodes can be evaluated by using the contact end resistance measurement method.

  5. Non-Contact Electrical Conductivity Measurement Technique for Molten Metals

    NASA Technical Reports Server (NTRS)

    Rhim, W. K.; Ishikawa, T.

    1998-01-01

    A non-contact technique of measuring the electrical conductivity (or resistivity) of conducting liquids while they are levitated by the high temperature electrostatic levitator in a high vacuum is reported.

  6. 52. Detail of electrical contacts in the south machinery room ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    52. Detail of electrical contacts in the south machinery room (interior of both machinery rooms is identical). Facing south. - Henry Ford Bridge, Spanning Cerritos Channel, Los Angeles-Long Beach Harbor, Los Angeles, Los Angeles County, CA

  7. Non-Contact Electrical Conductivity Measurement Technique for Molten Metals

    NASA Technical Reports Server (NTRS)

    Rhim, W. K.; Ishikawa, T.

    1998-01-01

    A non-contact technique of measuring the electrical conductivity (or resistivity) of conducting liquids while they are levitated by the high temperature electrostatic levitator in a high vacuum is reported.

  8. 51. Electrical contacts and relays in the south machinery room ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    51. Electrical contacts and relays in the south machinery room (interior of both machinery rooms is identical). Facing south. - Henry Ford Bridge, Spanning Cerritos Channel, Los Angeles-Long Beach Harbor, Los Angeles, Los Angeles County, CA

  9. The nature of electrical interaction of Schottky contacts

    SciTech Connect

    Torkhov, N. A.

    2011-08-15

    Electrical interaction between metal-semiconductor contacts combined in a diode matrix with a Schottky barrier manifests itself in an appreciable variation in their surface potentials and static current-volt-characteristics. The necessary condition for appearance of electrical interaction between such contacts consists in the presence of a peripheral electric field (a halo) around them; this field propagates to a fairly large distances (<30 {mu}m). The sufficient condition is the presence of regions where the above halos overlap. It has been shown that variation in the surface potential and the current-voltage characteristics of contacts occurs under the effect of the intrinsic electric field of the contact's periphery and also under the effect of an electric field at matrix periphery; the latter field is formed as a result of superposition of electric fields of halos which form its contacts. The degree of the corresponding effect is governed by the distance between contacts and by the total charge of the space charge regions for all contacts of the matrix: their number, sizes (diameter D{sub i,j}), concentration of doping impurities in the semiconductor N{sub D}, and physical nature of a metal-semiconductor system with a Schottky barrier (with the barrier height {phi}{sub b}). It is established that bringing the contacts closer leads to a relative decrease in the threshold value of the 'dead' zone in the forward current-voltage characteristics, an increase in the effective height of the barrier, and an insignificant increase in the nonideality factor. An increase in the total area of contacts (a total electric charge in the space charge region) in the matrix brings about an increase in the threshold value of the 'dead' zone, a relative decrease in the effective barrier height, and an insignificant increase in the ideality factor.

  10. A ring burn--electric or contact?

    PubMed

    Attalla, M F; el-Ekiabi, S; Al-Baker, A

    1990-02-01

    A circumferential band of deep burn affecting the ring finger sustained by a car electrician is presented. Although it was caused by short circuiting the car battery by a metal spanner and the ring he was wearing, the injury was purely a contact burn.

  11. Evaluation of Contact Loss and Wear Considering the Friction Under Electric Current for Sliding Contact in Electric Railway

    NASA Astrophysics Data System (ADS)

    Kimura, Yoshio; Mishina, Hiroshi

    At the contact point of current collector of railway, it is difficult to investigate the relation between the wear and the electric current because of many influence factors and the sliding conditions. Therefore we need to show this relation by means of smaller current conditions than railway to see the effects of electric current on friction and wear. Experimental device is pin-on-wire type, which we improve pin-on-disk type sliding system into. It is set in a direct-current circuit and the pin rubs wires under an electric current. At this point, there is not only the mechanical phenomenon by adhesive wear, but also the electric phenomena including fusion caused by the heat from constriction resistance and the arc discharge caused by the contact loss during sliding test. To examine the effects on the wear of contact materials by them, we investigate the details classifying contact loss, which has a great influence on the wear of contact materials, to two kinds of contact loss, arc contact loss and complete contact loss. As a result of it, we can show the relations between the power supply voltage and the outbreak number, the outbreak ratio of two types of contact loss, and relations between the wear and the power supply voltage, materials by means of the former two relations. And we can see the effects of fusion and arc discharge on the sliding surface by optical microscope.

  12. Fabrication and characterization of an electrically contacted vapor cell.

    PubMed

    Daschner, R; Ritter, R; Kübler, H; Frühauf, N; Kurz, E; Löw, R; Pfau, T

    2012-06-15

    We demonstrate the use of electrically contacted vapor cells to switch the transmission of a probe laser. The excitation scheme makes use of electromagnetically induced transparency involving a Rydberg state. The cell fabrication technique involves thin-film-based electric feedthroughs, which are well suited for scaling this concept to many addressable pixels like in flat panel displays.

  13. Electrical contacts to nanocrystalline diamond films studied at high temperatures

    NASA Astrophysics Data System (ADS)

    Shimoda, Naotaka; Kato, Yoshimine; Teii, Kungen

    2016-12-01

    Electrical contacts of Ni, NiSi, Cu, Au, Al, and Ti electrodes to an n-type nanocrystalline diamond film are studied at temperatures between room temperature and 500 °C in a vacuum by the transmission line measurement. Direct current-voltage characteristics measured between pairs of electrodes on the film show almost straight lines, typical of ohmic contacts, for all kinds of electrode materials. The measured series resistance is divided into resistance of the film, resistance of the electrode, and the contact resistance between the electrode and film. The Ni electrode has the lowest contact resistance, which decreases from about 380 to 200 mΩ cm2 with temperature. The contact resistance accounts for a large portion of the total resistance at low temperatures. The results confirm that the contact resistance has a close relation with the work function of electrodes such that the larger the work function, the lower the contact resistance.

  14. Microscale Self-Assembled Electrical Contacts

    DTIC Science & Technology

    2007-09-01

    Capillary forces from a molten alloy can be used to both bond microscale components and make electrical connections between them in a self...melting point, with Sn being the primary component to corrode and react with the underlying base metal. Using a eutectic Sn-Bi alloy and glycerol at...on this Sn-Bi-glycerol system was measured at 1.9 /mΩ-cm2. 15. SUBJECT TERMS Self-assembly, capillary forces, eutectic Bi-Sn solder, packaging 16

  15. Modeling the Electrical Contact Resistance at Steel-Carbon Interfaces

    NASA Astrophysics Data System (ADS)

    Brimmo, Ayoola T.; Hassan, Mohamed I.

    2016-01-01

    In the aluminum smelting industry, electrical contact resistance at the stub-carbon (steel-carbon) interface has been recurrently reported to be of magnitudes that legitimately necessitate concern. Mitigating this via finite element modeling has been the focus of a number of investigations, with the pressure- and temperature-dependent contact resistance relation frequently cited as a factor that limits the accuracy of such models. In this study, pressure- and temperature-dependent relations are derived from the most extensively cited works that have experimentally characterized the electrical contact resistance at these contacts. These relations are applied in a validated thermo-electro-mechanical finite element model used to estimate the voltage drop across a steel-carbon laboratory setup. By comparing the models' estimate of the contact electrical resistance with experimental measurements, we deduce the applicability of the different relations over a range of temperatures. The ultimate goal of this study is to apply mathematical modeling in providing pressure- and temperature-dependent relations that best describe the steel-carbon electrical contact resistance and identify the best fit relation at specific thermodynamic conditions.

  16. Surface Physics and Chemistry of Electrical Contact Phenomena.

    DTIC Science & Technology

    1981-09-01

    multiprogrammer. Typical \\ Auger traces covering a 50-1300- eV range were directly digi- tized with an energy increment of 0.65 eV . Computerized VL, -vL- 2...covering a 50 to 1300 eV range were directly digitized. Computerized values of peak to peak heights and concentrations of the various elements were... Rabinowicz and P. Chan, Electrical Contacts 1979 (I.I.T. Chicago), 123 (1979). 11. J.L. Johnson and O.S. Taylor, Electrical Contacts 1979 (I.I.T. Chicago

  17. The impact of electrical contacts and contact-induced ultralow noise amplitudes in layered transistors

    NASA Astrophysics Data System (ADS)

    Hsu, Chih-Kai; Lin, Chi-Yi; Li, Wenwu; Sun, Huabin; Xu, Yong; Hu, Zhigao; Chang, Yuan-Ming; Suen, Yuen-Wuu; Lin, Yen-Fu

    2016-12-01

    Electrical contacts made of conducting channels with external circuitry significantly impact electronic performances, in particular for two-dimensional semiconductors. This work presents a systematic study of back-to-back Schottky contacts to a layered compound of semiconducting flakes through static and dynamic electrical measurements and the first demonstration of Schottky barrier-dominated, p-type PbSnS2 field-effect transistors. In the static analysis, the Schottky barrier height of the layered transistors can be modulated by applied electrostatic fields, while the contact-dominated fluctuations render to the 1/f electric noise and induce a normalized noise amplitude in the order of 10-9-10-8. Such an ultralow-noise amplitude, which is never observed in other layered semiconducting transistors, is ascribed to the existence of Schottky barriers. Our experimental results provide a nuanced perspective for advancing the understanding of performance limit with increasing numbers of layers for electronic development.

  18. Alternative current source based Schottky contact with additional electric field

    NASA Astrophysics Data System (ADS)

    Mamedov, R. K.; Aslanova, A. R.

    2017-07-01

    Additional electric field (AEF) in the Schottky contacts (SC) that covered the peripheral contact region wide and the complete contact region narrow (as TMBS diode) SC. Under the influence of AEF is a redistribution of free electrons produced at certain temperatures of the semiconductor, and is formed the space charge region (SCR). As a result of the superposition of the electric fields SCR and AEF occurs the resulting electric field (REF). The REF is distributed along a straight line perpendicular to the contact surface, so that its intensity (and potential) has a minimum value on the metal surface and the maximum value at a great distance from the metal surface deep into the SCR. Under the influence of AEF as a sided force the metal becomes negative pole and semiconductor - positive pole, therefore, SC with AEF becomes an alternative current source (ACS). The Ni-nSi SC with different diameters (20-1000 μm) under the influence of the AEF as sided force have become ACS with electromotive force in the order of 0.1-1.0 mV, which are generated the electric current in the range of 10-9-10-7 A, flowing through the external resistance 1000 Ohm.

  19. Seamless Staircase Electrical Contact to Semiconducting Graphene Nanoribbons.

    PubMed

    Ma, Chuanxu; Liang, Liangbo; Xiao, Zhongcan; Puretzky, Alexander A; Hong, Kunlun; Lu, Wenchang; Meunier, Vincent; Bernholc, J; Li, An-Ping

    2017-10-11

    Electrical contact to low-dimensional (low-D) materials is a key to their electronic applications. Traditional metal contacts to low-D semiconductors typically create gap states that can pin the Fermi level (EF). However, low-D metals possessing a limited density of states at EF can enable gate-tunable work functions and contact barriers. Moreover, a seamless contact with native bonds at the interface, without localized interfacial states, can serve as an optimal electrode. To realize such a seamless contact, one needs to develop atomically precise heterojunctions from the atom up. Here, we demonstrate an all-carbon staircase contact to ultranarrow armchair graphene nanoribbons (aGNRs). The coherent heterostructures of width-variable aGNRs, consisting of 7, 14, 21, and up to 56 carbon atoms across the width, are synthesized by a surface-assisted self-assembly process with a single molecular precursor. The aGNRs exhibit characteristic vibrational modes in Raman spectroscopy. A combined scanning tunneling microscopy and density functional theory study reveals the native covalent-bond nature and quasi-metallic contact characteristics of the interfaces. Our electronic measurements of such seamless GNR staircase constitute a promising first step toward making low resistance contacts.

  20. Electrical contact structures for solid oxide electrolyte fuel cell

    DOEpatents

    Isenberg, Arnold O.

    1984-01-01

    An improved electrical output connection means is provided for a high temperature solid oxide electrolyte type fuel cell generator. The electrical connection of the fuel cell electrodes to the electrical output bus, which is brought through the generator housing to be connected to an electrical load line maintains a highly uniform temperature distribution. The electrical connection means includes an electrode bus which is spaced parallel to the output bus with a plurality of symmetrically spaced transversely extending conductors extending between the electrode bus and the output bus, with thermal insulation means provided about the transverse conductors between the spaced apart buses. Single or plural stages of the insulated transversely extending conductors can be provided within the high temperatures regions of the fuel cell generator to provide highly homogeneous temperature distribution over the contacting surfaces.

  1. The effects of hydrogen in sealed electrical contacts

    NASA Astrophysics Data System (ADS)

    Schubert, Rudolf; Gray, Eoin W.

    1985-12-01

    Hydrogen has been an integral atmospheric component of sealed electrical contacts for decades because of its effect on reliability. It is well known that hydrogen is a needed component to prevent high contact resistance due to carbon-spot formation. This hydrogen benefit has been attributed to hydrogenation of hydrocarbons (HC), enhanced volatilization of previously deposited carbon, enhanced catalytic activity, and thermal cooling. By a variety of physical and chemical laboratory techniques, this paper shows that the hydrogen is not itself directly active. However, some of the hydrogen is converted to water during the glass sealing process. It is this water which plays the active role in the process of quenching carbon formation from hydrocarbon impurities and also acts as a diluent of HC's adsorbed on the contact surface and in the arcing volume. This limits the carbon accumulation on the contacts and increases lifetime reliability.

  2. To the theory of modeling of electric power and electric contact systems

    NASA Astrophysics Data System (ADS)

    Kalimoldayev, Maksat N.; Jenaliyev, Muvasharkhan T.

    2016-11-01

    This study evaluated questions of optimum control solution of ordinary differential equations' nonlinear system which in particular, describes control processes of electric power systems. Conducted numerical experiments have shown sufficient efficiency of the implemented algorithms. It has been shown that essential feature of heating conditions in contact space occur in the moment of contact closure or contact breaking, which has t-1/2 order.

  3. Control of Surface Attack by Gallium Alloys in Electrical Contacts.

    DTIC Science & Technology

    1986-03-28

    and atmospheric control but does not allow visual observation of the contact brushes. This machine is a small homopolar motor built from mild steel...collectors,gallium, homopolar devices,liquid metals,~- is. ABSTRACT ICNI.. .. w 41N"w -~dv.mp.d Wrllt by Itabata" * Electrical contact between a copp’er...32 5 Test rig with felt metal brushes 32 6 Homopolar test apparatus 33 7 Rewetting of alloy track 33 8 Alloy track after running with finger 34 brushes

  4. Electrical characteristics of amorphous iron-tungsten contacts on silicon

    NASA Technical Reports Server (NTRS)

    Finetti, M.; Pan, E. T.-S.; Nicolet, M.-A.; Suni, I.

    1983-01-01

    The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

  5. Four limb amputations due to electrical burn caused by TV antenna contact with overhead electric cables.

    PubMed

    Celiköz, B; Sengezer, M; Selmanpakoğlu, N

    1997-02-01

    A 22-year-old man who sustained four limb amputations due to an electrical burn caused by contact of a TV receiver antenna with overhead electric cables is presented. The indications for limb amputation and the necessary preventive measures for such injuries are discussed.

  6. Aging process of electrical contacts in granular matter

    NASA Astrophysics Data System (ADS)

    Dorbolo, S.; Ausloos, M.; Vandewalle, N.; Houssa, M.

    2003-12-01

    The electrical resistance decay of a metallic granular packing has been measured as a function of time. This measurement gives information about the size of the conducting cluster formed by the well connected grains. Several regimes have been encountered. Chronologically, the first one concerns the growth of the conducting cluster and is identified to belong to diffusion processes through a stretched exponential behavior. The relaxation time is found to be simply related to the initial injected power. This regime is followed by a reorganization process due to thermal dilatation. For the long-term behavior of the decay, an aging process occurs and enhances the electrical contacts between grains through microsoldering.

  7. Investigation of factors affecting electrical contacts on single germanium nanowires

    NASA Astrophysics Data System (ADS)

    Sett, Shaili; Das, K.; Raychaudhuri, A. K.

    2017-03-01

    We report an experimental investigation of the quality of electrical contacts made on single Germanium nanowires (grown using Au catalyst from vapor) using Cr/Au contact pads. The nanowires are single crystalline and have a thin layer of oxide on them. We find that a low specific contact resistivity of 10-6 Ω cm2 can be obtained in nanowires with low resistance and the contact resistance enhances almost linearly with the nanowire resistivity. The metal semiconductor junction shows an ideality factor close to unity. A low barrier height of 0.15 eV can be obtained in nanowires of lower resistivities which increase to nearly 0.3 eV for nanowires of higher resistivity. The experiments were carried down to 10 K, and junction characteristics as a function of temperature were evaluated. The specific contact resistance increases on cooling but the barrier shows suppression as the nanowire is cooled, along with an enhancement of the ideality factor. We analyze the temperature dependence of these parameters using a model that assumes a Gaussian distribution of barrier heights in the contact region. The temperature dependence predicted by the model was observed, and the relevant parameters were obtained from the data.

  8. Morphological characteristics of tissue damages from electrical contact.

    PubMed

    Grigolia, D; Beriashvili, R; Kilasonia, B

    2009-05-01

    The purpose of the study was to reveal the morphological pattern of different tissues mostly vulnerable to electric contact injury from domestic electrical appliances and to determine the possible diagnostic criteria of this damage. The matter is of particular importance as domestic electrical appliances are widely used in torture and other cruel, inhuman and degrading treatment or punishment. The pilot part of the study was experimental and as the material of study have been used adult Wistar white rats. The microscopic study of slides taken from tissues damaged by electricity and dyed by routine Hematoxilin-Eosin reveals general structural changes that does not represent characteristic morphological pattern sufficient for forensic diagnosis of electric injury. The electricity damage of kidney and adrenal glands reflects the morphological pattern of stress that allows complex evaluation of damage but could have only orientating value for the estimation of cause of injury. Due to results obtained from pilot part of the study there is considered in regard to determine the possible diagnostic criteria for electrical injury of tissues the experimental morphological study must continue on skin and myocardial material using routine Hematoxilin-Eosin as well as other classical and modern morphological methods of study.

  9. Modeling of moving contact lines on electrically charged heated surfaces

    NASA Astrophysics Data System (ADS)

    Ajaev, Vladimir

    2011-11-01

    Local fluid flow and heat transfer near moving contact lines on heated surfaces is usually described by mathematical models incorporating the effects of evaporation, surface tension, thermocapillarity, and disjoining pressure due to London-van der Waals forces. However, this description is not accurate for the cases when electric charges in the liquid and on the heated surface are present, which is usually the case in applications involving water and liquid metals. We develop a model which incorporates the electrostatic effects into the standard lubrication-type model of a contact line on a heated surface. The gas phase above the liquid is assumed to be pure vapor and the macroscopically dry region of the solid is covered with an adsorbed film. The local liquid-vapor interface shapes and the apparent contact angle are described as functions of the temperature and the charge density at the solid surface.

  10. Process for preparing liquid metal electrical contact device

    NASA Technical Reports Server (NTRS)

    Lovell, R. R.; Berkopec, F. D.; Culp, D. H. (Inventor)

    1977-01-01

    The parts of an electrical contact device are treated by sputter etching to remove the parent metal oxide. Prior to exposure of the electrodes to any oxygen, a sacrificial metal is sputter deposited on the parts. Preferably this sacrificial metal is one that oxidizes slowly and is readily dissolved by the liquid metal. The sacrificial metal may then be removed from unwanted areas. The remainder of the ring and the probe to be wet by the liquid metal are submerged in the liquid metal or the liquid metal is flushed over these areas, preferably while they are being slightly abraded, unitl all the sacrificial material on these portions is wet by the liquid metal. In doing so the liquid metal dissolves the sacrificial metal and permanently wets the parent metal. Preferred materials used in the process and for the electrodes of electrical contact devices are high purity (99.0%) nickel or AISI type 304 stainless steel for the electrical contact devices, gallium as the liquid metal, and gold as the sacrificial material.

  11. A higher dimensional theory of electrical contact resistance

    NASA Astrophysics Data System (ADS)

    Lau, Y. Y.; Tang, Wilkin

    2009-06-01

    The electrical contact resistance is computed for a local constriction of finite length and finite transverse dimension in a conducting current channel. Conformal mapping is used for a rectangular current channel, and an electrostatic code is used for a cylindrical current channel. The connecting bridge, which models a local electrical contact, is assumed to be made of the same conducting material as the main current channel. Very simple analytic scaling laws for the contact resistance are constructed for a wide range of geometrical aspect ratios between the main current channel and its connecting bridge, which may assume a rectangular shape (for Cartesian channel), and a cylindrical or funnel shape (for cylindrical channel). These scaling laws have been confirmed by spot checks with numerical code results. They are generalizations of the classical theory of Holm and Timsit on the contact resistance of the "a-spot," defined as a small circular area of zero thickness through which current can flow. Potential applications and extensions of the theory are indicated.

  12. Report on Non-Contact DC Electric Field Sensors

    SciTech Connect

    Miles, R; Bond, T; Meyer, G

    2009-06-16

    This document reports on methods used to measure DC electrostatic fields in the range of 100 to 4000 V/m using a non-contact method. The project for which this report is written requires this capability. Non-contact measurements of DC fields is complicated by the effect of the accumulation of random space-charges near the sensors which interfere with the measurement of the field-of-interest and consequently, many forms of field measurements are either limited to AC measurements or use oscillating devices to create pseudo-AC fields. The intent of this document is to report on methods discussed in the literature for non-contact measurement of DC fields. Electric field meters report either the electric field expressed in volts per distance or the voltage measured with respect to a ground reference. Common commercial applications for measuring static (DC) electric fields include measurement of surface charge on materials near electronic equipment to prevent arcing which can destroy sensitive electronic components, measurement of the potential for lightning to strike buildings or other exposed assets, measurement of the electric fields under power lines to investigate potential health risks from exposure to EM fields and measurement of fields emanating from the brain for brain diagnostic purposes. Companies that make electric field sensors include Trek (Medina, NY), MKS Instruments, Boltek, Campbell Systems, Mission Instruments, Monroe Electronics, AlphaLab, Inc. and others. In addition to commercial vendors, there are research activities continuing in the MEMS and optical arenas to make compact devices using the principles applied to the larger commercial sensors.

  13. Surface Coating of Tungsten Carbide by Electric Exploding of Contact

    SciTech Connect

    Grigoryev, Evgeny G.

    2011-01-17

    Electric exploding of a tungsten carbide--cobalt material near-by high-speed steel surface forms on it a hardening coating. The essential structure properties of the formed coatings are determined by parameters of contact exploding electrode at the pulse current amplitude from above 106 A/cm2 and duration less than 10-4 s. The metallographic investigations of coating structures were done by microscope 'Neophot-24'. They have shown that the contact electric exploding caused the transfer of tungsten carbide and cobalt on the surface of high-speed steel. The breakdown of tungsten carbide--cobalt material took place during electrical exploding. The hardening layers of tungsten carbide and pure nanocrystalline tungsten have been formed upon the surface of high-speed steel as a result of electric exploding. Crystalline grains of tungsten have an almost spherical form and their characteristic size less than 400 nanometers. Micro hardness of the coating layers and high-speed steel structures was measured.

  14. Electrically-driven optical antennas enabled by mesoscopic contacts

    NASA Astrophysics Data System (ADS)

    Uskov, Alexander V.; Khurgin, Jacob B.; Bouhelier, Alexandre; Buret, Mikael; Protsenko, Igor E.; Smetanin, Igor V.

    2017-02-01

    Electrically driven optical antennas are attracting much attention, in particular, due to necessity to develop integrated electrical source of surface plasmons for future plasmonic nanocircuitries. By default, this term denotes a metal nanostructure, in which electromagnetic oscillations at optical frequencies are excited by electrons, tunneling between metallic parts of the structure when a bias voltage is applied between them. Instead of relying on an inefficient inelastic light emission in a tunnel gap, we are suggesting to use ballistic nanoconstrictions as the feed element of an optical antennas in order to excite electromagnetic plasmonic modes. Similarly to tunneling structures, the voltage applied at the constriction falls over the contact of nanoscale length. Electron passing through the contact ballistically can gain the energy provided by the bias 1eV and exchange it into an mode of the optical antenna. We discussed the underlying mechanisms responsible for the optical emission, and show that with nanoscale contact, one can reach quantum efficiency orders of magnitude larger than with standard tunneling structures.

  15. Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

    NASA Technical Reports Server (NTRS)

    Kung, K. T.-Y.; Nicolet, M.-A.; Suni, I.

    1984-01-01

    The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

  16. Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

    NASA Technical Reports Server (NTRS)

    Kung, K. T.-Y.; Nicolet, M.-A.; Suni, I.

    1984-01-01

    The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

  17. Hygrothermal Stability of Electrical Contacts Made from Silver and Graphite Electrically Conductive Pastes

    NASA Astrophysics Data System (ADS)

    Wang, Shoukai; Pang, Dick S.; Chung, D. D. L.

    2007-01-01

    The hygrothermal stability of electrical contacts made from silver and graphite electrically conductive pastes is comparatively evaluated by measurement of the increase in contact electrical resistance during immersion in water at 15°C and 40°C. The pastes are silver paint, silver paint with a nonconductive epoxy overcoat, silver epoxy, and graphite colloid. Each electrical contact is made between a seven-strand tin-coated copper wire and the surface of a carbon fiber epoxy-matrix composite. Silver paint and graphite colloid penetrate the spaces among the 130-μm-diameter strands, but silver epoxy does not. Partly due to its low penetrability and the silver flake (15 μm) preferred orientation, silver epoxy gives contacts of significantly higher resistance than silver paint. Graphite colloid is comparable to silver epoxy in the resistance. Among the four pastes, silver paint with an epoxy overcoat is most durable, though it gives slightly higher resistance than silver paint without epoxy. Silver epoxy is less durable than silver paint without an epoxy overcoat, particularly at 40°C, due to the low hygrothermal stability of epoxy. Graphite colloid is even less durable than silver epoxy, due to its being water based.

  18. Novel preparation methods of electrical contacts in Ge Sb Te thin films

    NASA Astrophysics Data System (ADS)

    Mahmoud, Saleh T.; Ghamlouche, H.; Qamhieh, N.; Al-Shamisi, Hessa

    2007-06-01

    New preparation methods of electrical contacts have been developed to minimize their effect on Ge-Sb-Te thin films. Impedance spectroscopy technique has been used to extract the contributions of both electrical contacts and the material under investigation. Three different configurations of electrical contacts were investigated. The results show that the effect of the contacts disappears when silver paste is placed on the gold electrode only without touching and interacting with the Ge-Sb-Te film.

  19. Effects of Oxide-Modified Spherical ZnO on Electrical Properties of Ag/ZnO Electrical Contact Material

    NASA Astrophysics Data System (ADS)

    Wei, Zhijun; Zhang, Lingjie; Shen, Tao; Qiao, Zhengyang; Yang, Hui; Fan, Xianping; Chen, Lawson

    2016-09-01

    Silver-zinc oxide (Ag/ZnO) electrical contact material is widely used as contacts of the medium duty switching devices. Effects of modified ZnO on properties of Ag/ZnO electrical contact material were investigated in this work. NiO and CuO were introduced to modify spherical ZnO by a chemical solution nano-coating method. Ag/ZnO contacts prepared using the modified spherical ZnO were produced by powder metallurgy (PM) method in a muffle furnace in temperature ranges from 750 to 900 °C. Results show that electrical conductivity, stability of relative density, and Vickers' hardness of Ag/ZnO electrical contact material can be improved by the addition of NiO because of the formation of NiO solid solution Zn0.2Ni0.8O. The addition of CuO to Ag/ZnO electrical contact material makes arcing energy and mass loss lower. Since this is attractive for a longer service life, using NiO and CuO co-modified ZnO as a second phase may be a promising way to improve properties of Ag/ZnO electrical contact material. Hence, the presented results could also be useful for the design of a new Ag/ZnO electrical contact material.

  20. Investigating electrical contact resistance losses in lithium-ion battery assemblies for hybrid and electric vehicles

    NASA Astrophysics Data System (ADS)

    Taheri, Peyman; Hsieh, Scott; Bahrami, Majid

    2011-08-01

    Lithium-ion (Li-ion) batteries are favored in hybrid-electric vehicles and electric vehicles for their outstanding power characteristics. In this paper the energy loss due to electrical contact resistance (ECR) at the interface of electrodes and current-collector bars in Li-ion battery assemblies is investigated for the first time. ECR is a direct result of contact surface imperfections, i.e., roughness and out-of-flatness, and acts as an ohmic resistance at the electrode-collector joints. A custom-designed testbed is developed to conduct a systematic experimental study. ECR is measured at separable bolted electrode connections of a sample Li-ion battery, and a straightforward analysis to evaluate the relevant energy loss is presented. Through the experiments, it is observed that ECR is an important issue in energy management of Li-ion batteries. Effects of surface imperfection, contact pressure, joint type, collector bar material, and interfacial materials on ECR are highlighted. The obtained data show that in the considered Li-ion battery, the energy loss due to ECR can be as high as 20% of the total energy flow in and out of the battery under normal operating conditions. However, ECR loss can be reduced to 6% when proper joint pressure and/or surface treatment are used. A poor connection at the electrode-collector interface can lead to a significant battery energy loss as heat generated at the interface. Consequently, a heat flow can be initiated from the electrodes towards the internal battery structure, which results in a considerable temperature increase and onset of thermal runaway. At sever conditions, heat generation due to ECR might cause serious safety issues, sparks, and even melting of the electrodes.

  1. An electric contact method to measure contact state between stator and rotor in a traveling wave ultrasonic motor.

    PubMed

    Qu, Jianjun; Zhou, Tieying

    2003-09-01

    Performances of ultrasonic motor (USM) depend considerably on contact state between stator and rotor. To measure the contact state in a traveling wave ultrasonic motor (TWUSM), a special test method is necessary. This paper develops a new method named electric contact method to measure contact state of stator and rotor in traveling wave type USM. The effects of pre-load and exciting voltage (amplitude) of stator on contact state between stator and rotor are studied with this method. By a simulating tester of friction properties of TWUSM, the variations of stalling torque and no-load speed against the pre-load and the exciting voltage have been measured. The relative contact length that describes the contact characteristic of stator and rotor is proposed. The relation between the properties of TWUSM and the contact state of stator and rotor are presented. Additionally, according to a theoretical contact model of stator and rotor in TWUSM, the contact lengths at given conditions are calculated and compared with the experimental results.

  2. Construction fatality due to electrical contact in Ontario, Canada, 1997-2007.

    PubMed

    Kim, Hwan; Lewko, John; Garritano, Enzo; Sharma, Bhanu; Moody, Joel; Colantonio, Angela

    2016-06-27

    Electrical contact is a leading cause of occupational fatality in the construction industry. However, research on the factors that contribute to electricity-related fatality in construction is limited. To characterize, using an adapted Haddon's Matrix, the factors that contribute to electricity-related occupational fatalities in the construction industry in Ontario, Canada. Coroner's data on occupational electricity-related fatalities between 1997-2007 in the construction industry were acquired from the Ontario Ministry of Labour. Using an adapted Haddon's Matrix, we characterized worker, agent, and environmental characteristics of electricity-related occupational fatalities in the province through a narrative text analysis. Electrical contact was responsible for 15% of all occupational fatalities among construction workers in Ontario. Factors associated with said occupational fatalities included direct contact with electrical sources, lower voltage sources, and working outdoors. This study provides a profile of electricity-related occupational fatalities among construction workers in Ontario, and can be used to inform safety regulations.

  3. Electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1989-08-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  4. Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

    NASA Astrophysics Data System (ADS)

    D'Ortenzi, L.; Monsù, R.; Cara, E.; Fretto, M.; Kara, S.; Rezvani, S. J.; Boarino, L.

    2016-10-01

    Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

  5. Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach.

    PubMed

    D'Ortenzi, L; Monsù, R; Cara, E; Fretto, M; Kara, S; Rezvani, S J; Boarino, L

    2016-12-01

    Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.

  6. Non-Contact Measurement of the Electrical Impedance of Biological Tissue

    DTIC Science & Technology

    2007-11-02

    NON-CONTACT MEASUREMENT OF THE ELECTRICAL IMPEDANCE OF BIOLOGICAL TISSUE C.H. Riedel and O.Dössel Institute of Biomedical Engineering, Universität...currents. Keywords—contact-free measurement, electrical im- pedance, coil systems I. Introduction The non-invasive method of measuring the impe- dance...can give information of the electrical characte- ristics of tissue. In some cases the conductivity gra- dient can be an important value. The

  7. Electrical contact to carbon nanotubes encapsulated in hexagonal boron nitride

    NASA Astrophysics Data System (ADS)

    Huang, Jhao-Wun; Pan, Cheng; Tran, Son; Taniguchi, Takashi; Bockrath, Marc; Lau, Jeanie

    2015-03-01

    Hexagonal boron nitride has been an excellent platform for low dimensional materials. We have fabricated ultra clean single-walled carbon nanotube(SWNT) devices encapsulated in hexagonal boron nitride by a dry transfer technique. Contacts to the SWNTs were made by reactive ion etching to expose the ends of SWNTs, followed by metal deposition. Ohmic contacts to SWNTs were achieved. We will discuss the quality of the contacts using different combinations of metals and present latest transport data.

  8. Effectiveness of a worker-worn electric-field sensor to detect power-line proximity and electrical-contact.

    PubMed

    Zeng, Shengke; Powers, John R; Newbraugh, Bradley H

    2010-06-01

    Construction workers suffer the most electrocutions among all industries. Currently, there are no electrical contact warning devices on the market to protect workers. This paper proposes a worker-worn electric-field sensor. As the worker is in proximity to, or in contact with, a live power-circuit, the sensor sets off an audible/visual warning alarm. The sensor also has the potential to wirelessly trip a wireless-capable circuit breaker, and to trigger a wireless transmitter to notify emergency response of an electrical contact. An experiment was conducted to measure electric-field variation on simulated human-wrists (10 defrosted hog-legs) in various proximities and in electrical-contact to a simulated power-circuit. The purpose of these tests was to determine the feasibility of developing a worker-worn electric-field detection sensor for use in protecting workers from contact with energized electrical conductors. This study observed a significant electric-field-magnitude increase as a hog-leg approaches the live-circuit, and the distinct electric-field-magnitude jump as the leg contacts with the live-circuit. The observation indicates that this sensor can be an effective device to warn the workers of electrical hazards. Additionally, the sensor has the potential to wirelessly trip a wireless-capable circuit-breaker and trigger a wireless transmitter (such as a cell phone) to notify an emergency response. The prompt notification prevents the worker from further injury caused by postponed medical-care. Widespread use of this sensor could lower electrocution and electrically related injury rates in the construction industry. (c) 2010 Elsevier Ltd. All rights reserved.

  9. Front contact solar cell with formed electrically conducting layers on the front side and backside

    DOEpatents

    Cousins, Peter John

    2012-06-26

    A bipolar solar cell includes a backside junction formed by a silicon substrate and a first doped layer of a first dopant type on the backside of the solar cell. A second doped layer of a second dopant type makes an electrical connection to the substrate from the front side of the solar cell. A first metal contact of a first electrical polarity electrically connects to the first doped layer on the backside of the solar cell, and a second metal contact of a second electrical polarity electrically connects to the second doped layer on the front side of the solar cell. An external electrical circuit may be electrically connected to the first and second metal contacts to be powered by the solar cell.

  10. Influence of the Thomson effect on the pulse heating of high-current electrical contacts

    NASA Astrophysics Data System (ADS)

    Merkushev, A. G.; Pavleino, M. A.; Pavleino, O. M.; Pavlov, V. A.

    2014-09-01

    Pulse heating of high-current contacts is notable for the presence of considerable temperature gradients in the contact area, which cause the Thomson effect—the appearance of thermoelectric currents. The amount of this effect against conventional Joule heat release is quantitatively estimated. Pulse heating of electrical contacts is numerically simulated with the use of the Comsol program package. It is demonstrated that thermoelectric currents make a negligible contribution to heating in the case of copper contacts.

  11. Interfaces of electrical contacts in organic semiconductor devices

    NASA Astrophysics Data System (ADS)

    Demirkan, Korhan

    Progress in organic semiconductor devices relies on better understanding of interfaces as well as material development. The engineering of interfaces that exhibit low resistance, low operating voltage and long-term stability to minimize device degradation is one of the crucial requirements. Photoelectron spectroscopy is a powerful technique to study the metal-semiconductor interfaces, allowing: (i) elucidation of the energy levels of the semiconductor and the contacts that determine Schottky barrier height, (ii) inspection of electrical interactions (such as charge transfer, dipole formation, formation of induced density of states or formation of polaron/bi-polaron states) that effect the energy level alignment, (iii) determination of interfacial chemistry, and (iv) estimation of interface morphology. In this thesis, we have used photoelectron spectroscopy extensively for detailed analysis of the metal organic semiconductor interfaces. In this study, we demonstrate the use of photoelectron spectroscopy for construction of energy level diagrams and display some results related to chemical tailoring of materials for engineering interfaces with lowered Schottky barriers. Following our work on the energy level alignment of poly(p-phenyene vinylene) based organic semiconductors on various substrates [Au, indium tin oxide, Si (with native oxide) and Al (with native oxide)], we tested controlling the energy level alignment by using polar self assembled molecules (SAMs). Photoelectron spectroscopy showed that, by introducing SAMs on the Au surface, we successfully changed the effective work function of Au surface. We found that in this case, the change in the effective work function of the metal surface was not reflected as a shift in the energy levels of the organic semiconductor, as opposed to the results achieved with different substrate materials. To investigate the chemical interactions at the metal/organic interface, we studied the metallization of poly(2-methoxy-5

  12. Electrical contact characteristics of YBaCuO bulk

    NASA Astrophysics Data System (ADS)

    Fukuda, K.; Fujita, H.; Tomita, M.; Murakami, M.; Sakai, N.; Hirabayashi, I.; Sawa, K.

    2007-10-01

    A persistent current switch (PCS) is used for superconducting applications, such as superconducting magnetic energy storage (SMES) system. The authors have proposed a mechanical switch of Y-Ba-Cu-O (YBCO) bulk as a mechanical PCS. In previous study, in order to investigate the contact characteristics of switch, 50 A current test was performed and the contact resistance between two contacts was measured by four-terminal method. As a result, it became clear that polishing and metal depositing on contact surfaces was effective methods to reduce the residual resistance. This paper focused on the greater current test (above 50 A) in order to perform more practical experiment as PCS used for SMES. In this experiment, the authors examined the characteristics to the transfer current of switch, which was not obtained by former 50 A current test. As a result, it was obtained that the transfer current had a relationship with the layer thickness of deposited Ag on contact surfaces.

  13. Non-contact magnetic coupled power and data transferring system for an electric vehicle

    NASA Astrophysics Data System (ADS)

    Matsuda, Y.; Sakamoto, H.

    2007-03-01

    We have developed a system which transmits electric power and communication data simultaneously in a non-contact method using a magnetic coupling coil. Already, we are developing the fundamental technology of a non-contact charging system, and this is applied in electric shavers, electric toothbrushes, etc. Moreover, basic experiments are being conducted for applying this non-contact charging system to electric equipments such as an electric vehicle (EV), which is a zero emission vehicle and environmentally excellent and will be the transportation means of the next generation. The technology can also be applied in other electronic equipment, etc. However, since the power supply route for these individual devices is independent, the supply system is complicated. EV also has to perform the transmission of electric power and the transmission of information (data), such as the amount of the charge, in a separate system, and thus is quite complicated. In this study, by performing simultaneously the transmission of electric power and information (data) using magnetic coupling technology in which it does not contact, the basic experiment aimed at attaining and making unification of a system simple was conducted, and the following good results were obtained: (1) Electric power required for load can be transmitted easily by non-contact. (2) A signal can easily be transmitted bidirectionally by non-contact. (3) This system is reliable, and is widely applicable.

  14. Liquid metal porous matrix sliding electrical contact: A concept

    NASA Technical Reports Server (NTRS)

    Ferguson, H.

    1973-01-01

    Concept utilizes porous metal or nonmetal matrix containing liquid metal in porous structure and confines liquid metal to contact area between rotor and brush by capillary forces. System may also be used to lubricate bearing systems.

  15. Rough surface electrical contact resistance considering scale dependent properties and quantum effects

    SciTech Connect

    Jackson, Robert L.; Crandall, Erika R.; Bozack, Michael J.

    2015-05-21

    The objective of this work is to evaluate the effect of scale dependent mechanical and electrical properties on electrical contact resistance (ECR) between rough surfaces. This work attempts to build on existing ECR models that neglect potentially important quantum- and size-dependent contact and electrical conduction mechanisms present due to the asperity sizes on typical surfaces. The electrical conductance at small scales can quantize or show a stepping trend as the contact area is varied in the range of the free electron Fermi wavelength squared. This work then evaluates if these effects remain important for the interface between rough surfaces, which may include many small scale contacts of varying sizes. The results suggest that these effects may be significant in some cases, while insignificant for others. It depends on the load and the multiscale structure of the surface roughness.

  16. Improvement and evaluation of thermal, electrical, sealing and mechanical contacts, and their interface materials

    NASA Astrophysics Data System (ADS)

    Luo, Xiangcheng

    Material contacts, including thermal, electrical, seating (fluid sealing and electromagnetic sealing) and mechanical (pressure) contacts, together with their interface materials, were, evaluated, and in some cases, improved beyond the state of the art. The evaluation involved the use of thermal, electrical and mechanical methods. For thermal contacts, this work evaluated and improved the heat transfer efficiency between two contacting components by developing various thermal interface pastes. Sodium silicate based thermal pastes (with boron nitride particles as the thermally conductive filler) as well as polyethylene glycol (PEG) based thermal pastes were developed and evaluated. The optimum volume fractions of BN in sodium silicate based pastes and PEG based pastes were 16% and 18% respectively. The contribution of Li+ ions to the thermal contact conductance in the PEG-based paste was confirmed. For electrical contacts, the relationship between the mechanical reliability and electrical reliability of solder/copper and silver-epoxy/copper joints was addressed. Mechanical pull-out testing was conducted on solder/copper and silver-epoxy/copper joints, while the contact electrical resistivity was measured. Cleansing of the copper surface was more effective for the reliability of silver-epoxy/copper joint than that of solder/copper joint. For sealing contacts, this work evaluated flexible graphite as an electromagnetic shielding gasket material. Flexible graphite was found to be at least comparable to conductive filled silicone (the state of the art) in terms of the shielding effectiveness. The conformability of flexible graphite with its mating metal surface under repeated compression was characterized by monitoring the contact electrical resistance, as the conformability is important to both electromagnetic scaling and fluid waling using flexible graphite. For mechanical contacts, this work focused on the correlation of the interface structure (such as elastic

  17. Investigation of transient temperature's influence on damage of high-speed sliding electrical contact rail surface

    NASA Astrophysics Data System (ADS)

    Zhang, Yuyan; Sun, Shasha; Guo, Quanli; Yang, Degong; Sun, Dongtao

    2016-11-01

    In the high speed sliding electrical contact with large current, the temperature of contact area rises quickly under the coupling action of the friction heating, the Joule heating and electric arc heating. The rising temperature seriously affects the conductivity of the components and the yield strength of materials, as well affects the contact state and lead to damage, so as to shorten the service life of the contact elements. Therefore, there is vital significance to measure the temperature accurately and investigate the temperature effect on damage of rail surface. Aiming at the problem of components damage in high speed sliding electrical contact, the transient heat effect on the contact surface was explored and its influence and regularity on the sliding components damage was obtained. A kind of real-time temperature measurement method on rail surface of high speed sliding electrical contact is proposed. Under the condition of 2.5 kA current load, based on the principle of infrared radiation non-contact temperature sensor was used to measure the rail temperature. The dynamic distribution of temperature field was obtained through the simulation analysis, further, the connection between temperature changes and the rail surface damage morphology, the damage volume was analyzed and established. Finally, the method to reduce rail damage and improve the life of components by changing the temperature field was discussed.

  18. Topographical and electrical study of contact and intermittent contact mode InP AFM lithography

    NASA Astrophysics Data System (ADS)

    Tranvouez, E.; Budau, P.; Bremond, G.

    2006-01-01

    In order to fabricate nanoscale oxide patterns on an InP(001) surface, local anodization by atomic force microscopy (AFM) contact and intermittent contact modes has been performed. Contact mode results are similar to those obtained with the local anodization of silicon, and mainly limited by the effect of space charge that occurs during the oxide growth. The existence of this space charge associated with the poor dielectric quality of the obtained oxide has been verified by performing scanning capacitance microscopy (SCM) measurements. Results for oxidation using intermittent AFM contact mode associated with a modulated voltage are more specific. For a more than two decade variation of probe velocity (0.01-5 µm s-1), the AFM oxidation introduces no significant changes in the oxide pattern. Experiments on the influence of oxidation time give rise to two regimes. First, for times shorter than 100 ms, a high growth rate is found. Second, for oxidation times longer than 100 ms, we observe an oxide height saturation and a significant decrease of lateral growth rate. These results provide a way to easily control the oxide shape. The space charge neutralization in this mode has also been investigated by SCM. The interesting results for intermittent contact oxidation confirm the capability of this technique to modify a nanoscale InP surface.

  19. Contact-independent measurement of electrical conductance of a thin film with a nanoscale sensor.

    PubMed

    Mentzel, Tamar S; Maclean, Kenneth; Kastner, Marc A

    2011-10-12

    Contact effects are a common impediment to electrical measurements throughout the fields of nanoelectronics, organic electronics, and the emerging field of graphene electronics. We demonstrate a novel method of measuring electrical conductance in a thin film of amorphous germanium that is insensitive to contact effects. The measurement is based on the capacitive coupling of a nanoscale metal-oxide-semiconductor field-effect transistor (MOSFET) to the thin film so that the MOSFET senses charge diffusion in the film. We tune the contact resistance between the film and contact electrodes and show that our measurement is unaffected. With the MOSFET, we measure the temperature and field dependence of the conductance of the amorphous germanium, which are fit to a model of variable-range hopping. The device structure enables both a contact-independent and a conventional, contact-dependent measurement, which makes it possible to discern the effect of the contacts in the latter measurement. This measurement method can be used for reliable electrical characterization of new materials and to determine the effect of contacts on conventional electron transport measurements, thus guiding the choice of optimal contact materials.

  20. Aid for electrical contacting of high-temperature fuel cells and method for production thereof

    DOEpatents

    Becker, Ines; Schillig, Cora

    2014-03-18

    A double-sided adhesive metal-based tape for use as contacting aid for SOFC fuel cells is provided. The double-sided metal-based adhesive tape is suitable for simplifying the construction of cell bundles. The double-sided metal-based adhesive tape is used for electrical contacting of the cell connector with the anode and for electrical contacting of the interconnector of the fuel cells with the cell connector. A method for producing the double-sided adhesive metal-base tape is also provided.

  1. On direct-writing methods for electrically contacting GaAs and Ge nanowire devices

    NASA Astrophysics Data System (ADS)

    Chen, Guannan; Gallo, Eric M.; Burger, Joan; Nabet, Bahram; Cola, Adriano; Prete, Paola; Lovergine, Nico; Spanier, Jonathan E.

    2010-05-01

    The electronic transport and gating characteristics in GaAs and Ge nanowires (NWs) are altered significantly following either indirect or direct exposure to a focused Ga+ ion beam (FIB), such as that used to produce Pt electrical contacts to NWs. While these results challenge the assumptions made in some previously reported work relating to the electronic properties of semiconductor NWs using FIB-assisted production of contacts and/or their leads, local electron beam induced deposition is shown to be a reliable and facile route for producing robust electrical contacts to individual vapor phase-grown NWs in a manner that enables study of their actual carrier transport properties.

  2. A focused electric spark source for non-contact stress wave excitation in solids.

    PubMed

    Dai, Xiaowei; Zhu, Jinying; Haberman, Michael R

    2013-12-01

    A focused electric spark is used as a non-contact acoustic source to excite stress waves in solids. The source consists of an electric spark source located at the near focus of an ellipsoidal reflector that focuses the acoustic disturbance generated by the spark source to the far focal point. Experimental studies using both contact and non-contact sensors indicate that the source has the capability to excite the Rayleigh surface wave and impact-echo mode (S1-zero-group-velocity Lamb mode) in a 250 mm thick concrete slab and to enable fully air-coupled testing of concrete specimens.

  3. Photoluminescence variations associated with the deposition of palladium electrical contacts on detector-grade mercuric iodide

    SciTech Connect

    Wong, D.; Bao, X.J.; Schlesinger, T.E.; James, R.B.; Cheng, A.; Ortale, C.; van den Berg, L.

    1988-10-17

    Specimens of mercuric iodide with evaporated semitransparent palladium contacts have been studied using low-temperature photoluminescence spectroscopy. Distinct differences were found between spectra taken from beneath the Pd contacts and those taken from regions on the HgI/sub 2/ sample that were masked during the Pd deposition, indicating that contact fabrication can change the defect structure near the contact/substrate interface. Comparison of the spectra from spots beneath the contacts with spectra from bulk material specimens and HgI/sub 2/ detectors graded in terms of their nuclear detection performance suggests that the processing steps used to deposit electrical contacts and the choice of contact material may have a significant influence on detector performance.

  4. On the behavior and stability of a liquid metal in quasi-planar electric contacts

    NASA Astrophysics Data System (ADS)

    Samuilov, S. D.

    2016-06-01

    The contacts between conductors formed under relatively low pressures can be treated as quasi-planar. Melting of the material of such contacts upon the passage of electric current is used in some technological processes, but the behavior of liquid in these conditions has not been analyzed. In this study, such an estimate was obtained for specific conditions appearing under electric-pulse compacting (briquetting) of metal shavings. Analysis of derived relations shows that this estimate is valid for any quasi-2D contacts upon passage of a pulsed current of duration from microseconds to milliseconds. It is shown that the spacing between contact surfaces decreases, the liquid metal is extruded in the lateral directions, and the area of the contact and its conductivity increase. Sausage-type magnetohydrodynamic (MHD) instability and overheating instability do not evolve in these conditions because the instability wavelength is larger than the rated thickness of the molten layer; screw MHD instability can appear in slower processes.

  5. Magnetic Properties of Electrically Contacted Fe4 Molecular Magnets

    NASA Astrophysics Data System (ADS)

    Burgess, Jacob; Malavolti, Luigi; Lanzilotto, Valeria; Mannini, Matteo; Totti, Frederico; Ninova, Silviya; Yan, Shichao; Choi, Deung-Jang; Rolf-Pissarczyk, Steffen; Cornia, Andrea; Sessoli, Roberta; Loth, Sebastian

    2015-03-01

    Single molecule magnets (SMMs) are often large and fragile molecules. This poses challenges for the construction of SMM based spintronics. Device geometries with two electronic leads contacting a molecule may be explored via scanning tunneling microscopy (STM). The Fe4 molecule stands out as a robust, thermally evaporable SMM, making it ideal for such an experiment. Here we present the first STM investigations of individual Fe4 molecules thermally evaporated onto a monolayer of Cu2N on a Cu (100) crystal. Using inelastic electron tunneling spectroscopy (IETS), spin excitations in single Fe4 molecules can be detected at meV energies. Analysis using a Spin Hamiltonian allows extraction of magnetic properties of individual Fe4 molecules, and investigation of the influence of the electronic leads. The tip and sample induce small changes in the magnetic properties of Fe4 molecules, making Fe4 a promising candidate for the development of spintronics devices based on SMMs.

  6. Effect of electric fields on contact angle and surface tension of drops.

    PubMed

    Bateni, A; Laughton, S; Tavana, H; Susnar, S S; Amirfazli, A; Neumann, A W

    2005-03-01

    Contact angles of sessile drops were experimentally investigated in the electric field. The experimental setup was designed such that the electric field was applied to all three interfaces. The advanced Automated Polynomial Fitting (APF) methodology was employed to measure contact angles with high accuracy. The significance of the observations and trends was examined by conducting statistical tests of hypothesis. It was found that contact angles of polar liquids such as alcohols increase in the electric field. However, no significant trend was observed for nonpolar liquids such as alkanes. The change in the contact angle was found to be stronger for liquids with longer molecules. It was shown that the polarity of the electric field is not an underlying factor in the observed trends. Using the equation of state for interfacial tensions, the observed shift in contact angles was translated into a corresponding change in surface tension of the liquids. The results suggest that the surface tension of alcohols increases by one to two percent (depending on the size of molecules) when an electric field of the order of magnitude of 10(6) V/m is applied.

  7. Electrically Conductive Bulk Composites through a Contact-Connected Aggregate

    PubMed Central

    Nawroj, Ahsan I.; Swensen, John P.; Dollar, Aaron M.

    2013-01-01

    This paper introduces a concept that allows the creation of low-resistance composites using a network of compliant conductive aggregate units, connected through contact, embedded within the composite. Due to the straight-forward fabrication method of the aggregate, conductive composites can be created in nearly arbitrary shapes and sizes, with a lower bound near the length scale of the conductive cell used in the aggregate. The described instantiation involves aggregate cells that are approximately spherical copper coils-of-coils within a polymeric matrix, but the concept can be implemented with a wide range of conductor elements, cell geometries, and matrix materials due to its lack of reliance on specific material chemistries. The aggregate cell network provides a conductive pathway that can have orders of magnitude lower resistance than that of the matrix material - from 1012 ohm-cm (approx.) for pure silicone rubber to as low as 1 ohm-cm for the silicone/copper composite at room temperature for the presented example. After describing the basic concept and key factors involved in its success, three methods of implementing the aggregate into a matrix are then addressed – unjammed packing, jammed packing, and pre-stressed jammed packing – with an analysis of the tradeoffs between increased stiffness and improved resistivity. PMID:24349239

  8. A new simulation approach to characterizing the mechanical and electrical qualities of a connector contact

    NASA Astrophysics Data System (ADS)

    Leidner, M.; Schmidt, H.; Myers, M.; Schlaak, H. F.

    2010-02-01

    Due to ongoing miniaturization in electronics, connector contact designs have to follow the same trends. The prediction of the mechanical and electrical performance of low force connector contacts becomes increasingly important. This paper shows a new approach for modeling elastic plastic contact between two multi-layered non-conforming rough bodies subjected to pressure and shear traction. Three main considerations will be presented: realistic surface simulations, numerical simulation of contact interfaces, and constriction resistance calculations. (i) Since measured three dimensional (3D) digitized surface data is not always available, having the ability to numerically simulate “realistic” rough surface topographies is of great importance. It will be shown how realistic engineered surfaces can be modeled using five scale independent parameters: RMS roughness, x/y correlation length, kurtosis and skew. (ii) A numerical algorithm has been developed which calculates the stresses and deformations generated in a contact system with up to three different layers per contact partner. The mechanical properties of each individual contact layer are incorporated into the calculation. This numerical algorithm is based on Papkovich-Neuber Potentials, both multi grid and conjugate gradient methods are used, and the plastic deformation of the individual contact points (a-spots) can be interpolated using different material hardening behaviors. (iii) Once the contact interface a-spot distribution is simulated, the constriction resistance of the true contact area can then be calculated. The voltage drop within the contacting bodies is interpolated by iteratively solving the Laplace equation. The electrical properties of all the individual contact layers as well as the interaction between the individual a-spots are taken into account. A validation of these simulation algorithms will be shown using a hard Au/Ni/CuSn6 contact system. The results show excellent agreement between

  9. Electric-field distribution in a quantum superlattice with an injecting contact: Exact solution

    NASA Astrophysics Data System (ADS)

    Maksimenko, V. A.; Makarov, V. V.; Koronovskii, A. A.; Hramov, A. E.; Venckevičius, R.; Valušis, G.; Balanov, A. G.; Kusmartsev, F. V.; Alekseev, K. N.

    2016-04-01

    A very simple model describing steady-state electron transport along a quantum superlattice of a finite length taking into account an arbitrary electrical characteristic of the injecting contact is considered. In the singleminiband approximation, exact formulas for the spatial distribution of the electric field in the superlattice are derived for different types of contact. Conditions under which the field is uniform are identified. Analytical expressions for the current-voltage characteristics are obtained. In the context of the developed theory, the possibility of attaining uniform-field conditions in a diode structure with a natural silicon-carbide superlattice is discussed.

  10. Pilot measurements of ELF contact currents in some electric utility occupations.

    PubMed

    Bowman, Joseph; Niple, John; Kavet, Rob

    2006-06-01

    Contact currents from touching objects with different voltages can produce electric fields within the body that produce neurological and other biological effects. To begin measuring these exposures among electric utility workers, a new contact current meter (CCM) was tested in a pilot study at Southern California Edison. The CCM was worn for 82 full-shift measurements by 76 volunteers from eight occupations who did not work directly with energized electrical equipment. The volunteers were exposed to an average of 285.8 contact current events above the meter's 1-microA threshold, but most of these were electrostatic spark discharges. Fourteen employees experienced an average of 135.1 contact currents events whose primary frequency was 60 Hz. Using a circuit model of the human body, the average contact currents going from arm to arm was 9.8 microA (maximum = 178.0 microA), and the average going down the torso was 25.5 microA (maximum = 662.0). The maximum exposures were experienced by a technical support employee working in a substation. All measurements in this pilot study were below the 3000 microA maximum permissible exposure for contact currents set by the Institute of Electrical and Electronic Engineers (IEEE). Combining these current measurements with the results of high-resolution dosimetry, the internal electric fields averaged an estimated 1.7 mV/m in the heart (maximum = 21.0 mV/m), and 1.9 mV/m in the hematopoietic bone marrow in the torso (maximum = 56.5 mV/m). These internal electric fields from contact currents are below the basic restriction of 943 mV/m in the IEEE exposure standards but are above 1 mV/m, a level where biological effects have been often reported in laboratory studies. Safety concerns limited the measurements to de-energized equipment, so we did not obtain data on work in energized high-voltage environments, the most likely sources of high contact currents. This pilot study identified other improvements to the contact current meter that

  11. Good electrical contacts for high resistivity (Cd,Mn)Te crystals

    SciTech Connect

    Witkowska-Baran,M.; Mycielski, A.; Kochanowska, D.; Szadkowski, A. J.; Jakiela, r.; Witkowska, B.; Kaliszek, W.; Domagala, J.; Lusakowska, E.; Domukhovski, V.; Dybko, K.; Cui, Y.; James, R. B.

    2008-10-19

    We consider that semi-insulating (Cd,Mn)Te crystals may well successfully replace the commonly used (Cd,Zn)Te crystals as a material for manufacturing large-area X- and gamma-ray detectors. The Bridgman growth method yields good quality and high-resistivity (10{sup 9}-10{sup 10} {Omega}-cm) crystals of (Cd,Mn)Te:V. Doping with vanadium ({approx} 10{sup 16} cm{sup -3}), which acts as a compensating agent, and annealing in cadmium vapors, which reduces the number of cadmium vacancies in the as-grown crystal, ensure this high resistivity. Detector applications of the crystals require satisfactory electrical contacts. Hence, we explored techniques of ensuring good electrical contacts to semi-insulating (Cd,Mn)Te crystals. Our findings are reported here. Before depositing the contact layers, we prepared an 'epi-ready' surface of the crystal platelet by a procedure described earlier for various tellurium-based II-VI compound crystals. A molecular beam epitaxy (MBE) apparatus was used to deposit various types of contact layers: Monocrystalline semiconductor layers, amorphous- and nanocrystalline semiconductor layers, and metal layers were studied. We employed ZnTe heavily doped ({approx} 10{sup 18} cm{sup -3}) with Sb, and CdTe heavily doped ({approx} 10{sup 17} cm{sup -3}) with In as the semiconductors to create contact layers that subsequently enable good contact (with a narrow, tunneling barrier) to the Au layer that usually is applied as the top contact layer. We describe and discuss the technology and some properties of the electrical contacts to semi-insulating (Cd,Mn)Te.

  12. Fully Electrical Modeling of Thermoelectric Generators with Contact Thermal Resistance Under Different Operating Conditions

    NASA Astrophysics Data System (ADS)

    Siouane, Saima; Jovanović, Slaviša; Poure, Philippe

    2017-01-01

    The Seebeck effect is used in thermoelectric generators (TEGs) to supply electronic circuits by converting the waste thermal into electrical energy. This generated electrical power is directly proportional to the temperature difference between the TEG module's hot and cold sides. Depending on the applications, TEGs can be used either under constant temperature gradient between heat reservoirs or constant heat flow conditions. Moreover, the generated electrical power of a TEG depends not only on these operating conditions, but also on the contact thermal resistance. The influence of the contact thermal resistance on the generated electrical power have already been extensively reported in the literature. However, as reported in Park et al. (Energy Convers Manag 86:233, 2014) and Montecucco and Knox (IEEE Trans Power Electron 30:828, 2015), while designing TEG-powered circuit and systems, a TEG module is mostly modeled with a Thévenin equivalent circuit whose resistance is constant and voltage proportional to the temperature gradient applied to the TEG's terminals. This widely used simplified electrical TEG model is inaccurate and not suitable under constant heat flow conditions or when the contact thermal resistance is considered. Moreover, it does not provide realistic behaviour corresponding to the physical phenomena taking place in a TEG. Therefore, from the circuit designer's point of view, faithful and fully electrical TEG models under different operating conditions are needed. Such models are mainly necessary to design and evaluate the power conditioning electronic stages and the maximum power point tracking algorithms of a TEG power supply. In this study, these fully electrical models with the contact thermal resistance taken into account are presented and the analytical expressions of the Thévenin equivalent circuit parameters are provided.

  13. Substitutes for ozone depleting aerosol electrical contact cleaners and cleaner/lubricants. Technical report

    SciTech Connect

    Bevilacqua, P.; Clark, K.G.

    1996-01-24

    With the production of Class I Ozone Depleting Substances discontinued as of January 1996, it became necessary to identify suitable replacements for chlorofluorocarbon (CFC-113) and trichloroethane (TCA) based electrical contact cleaners and cleaner/lubricant products. Two hydrochlorofluorocarbon (HCFC-141b) blends were identified as substitutes and recommended for interim use.

  14. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

    PubMed

    Habicht, S; Zhao, Q T; Feste, S F; Knoll, L; Trellenkamp, S; Ghyselen, B; Mantl, S

    2010-03-12

    We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.

  15. An analytical model and parametric study of electrical contact resistance in proton exchange membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Wu, Zhiliang; Wang, Shuxin; Zhang, Lianhong; Hu, S. Jack

    This paper presents an analytical model of the electrical contact resistance between the carbon paper gas diffusion layers (GDLs) and the graphite bipolar plates (BPPs) in a proton exchange membrane (PEM) fuel cell. The model is developed based on the classical statistical contact theory for a PEM fuel cell, using the same probability distributions of the GDL structure and BPP surface profile as previously described in Wu et al. [Z. Wu, Y. Zhou, G. Lin, S. Wang, S.J. Hu, J. Power Sources 182 (2008) 265-269] and Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Results show that estimates of the contact resistance compare favorably with experimental data by Zhou et al. [Y. Zhou, G. Lin, A.J. Shih, S.J. Hu, J. Power Sources 163 (2007) 777-783]. Factors affecting the contact behavior are systematically studied using the analytical model, including the material properties of the two contact bodies and factors arising from the manufacturing processes. The transverse Young's modulus of chopped carbon fibers in the GDL and the surface profile of the BPP are found to be significant to the contact resistance. The factor study also sheds light on the manufacturing requirements of carbon fiber GDLs for a better contact performance in PEM fuel cells.

  16. Carbon fiber reinforced mortar as an electrical contact material for cathodic protection

    SciTech Connect

    Fu, X.; Chung, D.D.L.

    1995-05-01

    For a joint between old plain mortar and new mortar (which serves as an electrical contact material for cathodic protection of steel-reinforced old mortar), short carbon fiber addition to the new mortar was found to decrease both the contact resistivity and the new mortar`s volume resistivity. Whether the new mortar contained fibers or not, the contact resistance was higher than the new mortar`s volume resistance perpendicular to the contact and was lower than the new mortar`s volume resistance parallel to the contact. In the presence of latex, the volume resistivity was 3.1 {times} 10{sup 5}, 1.4 {times} 10{sup 3} and 1.2 {times} 10{sup 2} {Omega}{center_dot}cm and the contact resistivity was 5.9 {times} 10{sup 6}, 2.7 {times} 10{sup 5} and 2.6 {times} 10{sup 4} {Omega}{center_dot}cm{sup 2} at fiber contents of 0, 0.53 and 1.1 vol.% respectively. Latex addition alone to the new mortar increased slightly both contact resistivity and new mortar`s volume resistivity. All resistivities increased very slightly with curing age.

  17. Characterization of Contact and Bulk Thermal Resistance of Laminations for Electric Machines

    SciTech Connect

    Cousineau, Emily; Bennion, Kevin; Devoto, Douglas; Naramanchi, Sreekant

    2015-07-06

    Thermal management for electric motors is important as the automotive industry continues to transition to more electrically dominant vehicle propulsion systems. The transition to more electrically dominant propulsion systems leads to higher-power duty cycles for electric-drive systems. Thermal constraints place significant limitations on how electric motors ultimately perform. As thermal management improves, there will be a direct trade-off among motor performance, efficiency, cost, and the sizing of electric motors to operate within the thermal constraints. During the development of thermal finite element analysis models and computational fluid dynamics models for electric motors, it was found that there was a lack of open literature detailing the thermal properties of key materials common in electric motors that are significant in terms of heat removal. The lack of available literature, coupled with the strong interest from industry in the passive-stack thermal measurement results, led to experiments to characterize the thermal contact resistance between motor laminations. We examined four lamination materials, including the commonly used 26 gauge and 29 gauge M19 materials, the HF10 and Arnon 7 materials. These latter two materials are thinner and reduce eddy currents responsible for core losses. We measured the thermal conductivity of the lamination materials and the thermal contact resistance between laminations in a stack, as well as investigated factors affecting contact resistance between laminations such as the contact pressure and surface finish. Lamination property data will be provided and we also develop a model to estimate the through-stack thermal conductivity for materials beyond those that were directly tested in this work. For example, at a clamping pressure of 138 kPa, the 29 gauge M19 material has a through-stack thermal conductivity of 1.68 W/m-K, and the contact resistance between laminations was measured to be 193 mm^2-K/W. The measured bulk

  18. Transition from steady to periodic liquid-metal magnetohydrodynamic flow in a sliding electrical contact

    NASA Astrophysics Data System (ADS)

    Talmage, Gita; Walker, John S.; Brown, Samuel H.; Sondergaard, Neal A.

    1993-09-01

    In homopolar motors and generators, large dc electric currents pass through the sliding electrical contacts between rotating copper disks (rotors) and static copper surfaces shrouding the rotor tips (stators). A liquid metal in the small radial gap between the rotor tip and concentric stator surface can provide a low-resistance, low-drag electrical contact. Since there is a strong magnetic field in the region of the electrical contacts, there are large electromagnetic body forces on the liquid metal. The primary, azimuthal motion consists of simple Couette flow, plus an electromagnetically driven flow with large extremes of the azimuthal velocity near the rotor corners. The secondary flow involves the radial and axial velocity components, is driven by the centrifugal force associated with the primary flow, and is opposed by the electromagnetic body force, so that the circulation varies inversely as the square of the magnetic-field strength. Three flow regimes are identified as the angular velocity Ω of the rotor is increased. For small Ω, the primary flow is decoupled from the secondary flow. As Ω increases, the secondary flow begins to convect the azimuthal-velocity peaks radially outward, which in turn changes the centrifugal force driving the secondary flow. At some critical value of Ω, the flow becomes periodic through the coupling of the primary and secondary flows. The azimuthal-velocity peaks begin to move radially in and out with an accompanying oscillation in the secondary-flow strength.

  19. Nanocomposite nc-TiC/a-C thin films for electrical contact applications

    SciTech Connect

    Lewin, Erik; Wilhelmsson, Ola; Jansson, Ulf

    2006-09-01

    Thin film nanocomposites of nanocrystalline TiC embedded in a matrix of amorphous carbon have been prepared by nonreactive unbalanced dc-magnetron sputtering. These samples have been tested as coating materials for electrical contacts and show great potential as an alternative to traditional metallic coatings for contacts subjected to wear and friction. Through variation of composition and deposition temperature different microstructures have been attained. The coatings have been characterized using x-ray diffraction, x-ray photoelectron spectroscopy, and Raman spectroscopy. The performance of the coatings has been coupled to the microstructure whereby tuning and optimization possibilities have been identified.

  20. Integration of Carbon Nanotubes in Microsystems: Local Growth and Electrical Properties of Contacts

    PubMed Central

    Haugen, Tormod B.; Ta, Bao Q.; Halvorsen, Einar; Hoivik, Nils; Aasmundtveit, Knut E.

    2013-01-01

    Carbon nanotubes (CNTs) have been directly grown onto a silicon microsystem by a local synthesis method. This method has potential for wafer-level complimentary metal-oxide-semiconductor (CMOS) transistor-compatible integration of CNTs into more complex Si microsystems; enabling, e.g., gas sensors at low cost. In this work, we demonstrate that the characteristics of CNTs grown on specific locations can be changed by tuning the synthesis conditions. We also investigate the role of the contact between CNTs and the Si microsystem; observing a large influence on the electrical characteristics of our devices. Different contact modes can render either an ohmic or Schottky-like rectifying characteristics. PMID:28811424

  1. Low-drag electrical-contact arrangement for maintaining continuity between horizontally movable members

    DOEpatents

    Brown, R.J.; Gerth, H.L.; Robinson, S.C.

    1981-01-23

    This invention is a low-drag electrical contact arrangement for establishing continuity between upper and lower spaced members which are subject to relative horizontal movement. In one aspect, the invention comprises an electrical commutating arrangement which includes a horizontally disposed linear electrical commutator. A horizontally movable electrically conductive pedestal is positioned below the commutator and defines a clearance therewith. The pedestal is formed with a cavity confronting the commutator. In the cavity is a bead of electrical conductive liquid, the bead being characterized by an upwardly convex meniscus portion which extends across the clearance and contacts the commutator. The surface tension of the bead is sufficient to maintain the bead intact when the commutator and pedestal are displaced horizontally at speeds from zero to at least twelve inches a minute. This arrangement provides a significant advance in highly precise machining processes, such as diamond-turning, where precision is limited by the drag imposed by conventional commutators of the carbon-brush type.

  2. Low-drag electrical contact arrangement for maintaining continuity between horizontally movable members

    DOEpatents

    Brown, R. Jack; Gerth, Howard L.; Robinson, Samuel C.

    1982-01-01

    This invention is a low-drag electrical contact arrangement for establishing continuity between upper and lower spaced members which are subject to relative horizontal movement. In one aspect, the invention comprises an electrical commutating arrangement which includes a horizontally disposed linear electrical commutator. A horizontally movable electrically conductive pedestal is positioned below the commutator and defines a clearance therewith. The pedestal is formed with a cavity confronting the commutator. In the cavity is a bead of electrical conductive liquid, the bead being characterized by an upwardly convex meniscus portion which extends across the clearance and contacts the commutator. The surface tension of the bead is sufficient to maintain the bead intact when the commutator and pedestal are displaced horizontally at speeds from zero to at least twelve inches a minute. This arrangement provides a significant advance in highly precise machining processes, such as diamond-turning, where precision is limited by the drag imposed by conventional commutators of the carbon-brush type.

  3. Sheet resistance determination of electrically symmetric planar four-terminal devices with extended contacts

    NASA Astrophysics Data System (ADS)

    Cornils, Martin; Paul, Oliver

    2008-07-01

    This paper reports an analytic method to determine the sheet resistance Rsq of symmetric planar four-terminal devices based on resistance measurements. Using the technique of conformal mapping it is first shown that any such device is electrically equivalent to a corresponding symmetric unit disk with the same Rsq and invariant under rotations by 90°. Two independent resistances measurable on these devices are expressed analytically as a function of Rsq and of the contact opening angle α. These two resistances fully characterize the electrical properties of such planar conductive devices. A simple procedure to extract both α and Rsq from the resistance values is then presented. These findings are corroborated by the experimental characterization of four-contact devices of ten different geometries fabricated using a commercial complementary metal oxide semiconductor process. From these widely different devices, the sheet resistance of a n-well is extracted to be 1042Ω with a relative uncertainty of only 0.45%.

  4. Novel non-contact control system of electric bed for medical healthcare.

    PubMed

    Lo, Chi-Chun; Tsai, Shang-Ho; Lin, Bor-Shyh

    2017-03-01

    A novel non-contact controller of the electric bed for medical healthcare was proposed in this study. Nowadays, the electric beds are widely used for hospitals and home-care, and the conventional control method of the electric beds usually involves in the manual operation. However, it is more difficult for the disabled and bedridden patients, who might totally depend on others, to operate the conventional electric beds by themselves. Different from the current controlling method, the proposed system provides a new concept of controlling the electric bed via visual stimuli, without manual operation. The disabled patients could operate the electric bed by focusing on the control icons of a visual stimulus tablet in the proposed system. Besides, a wearable and wireless EEG acquisition module was also implemented to monitor the EEG signals of patients. The experimental results showed that the proposed system successfully measured and extracted the EEG features related to visual stimuli, and the disabled patients could operate the adjustable function of the electric bed by themselves to effectively reduce the long-term care burden.

  5. Inactive end cell assembly for fuel cells for improved electrolyte management and electrical contact

    DOEpatents

    Yuh, Chao-Yi; Farooque, Mohammad; Johnsen, Richard

    2007-04-10

    An assembly for storing electrolyte in a carbonate fuel cell is provided. The combination of a soft, compliant and resilient cathode current collector and an inactive anode part including a foam anode in each assembly mitigates electrical contact loss during operation of the fuel cell stack. In addition, an electrode reservoir in the positive end assembly and an electrode sink in the negative end assembly are provided, by which ribbed and flat cathode members inhibit electrolyte migration in the fuel cell stack.

  6. Effects of contact resistance on electrical conductivity measurements of SiC-based materials

    SciTech Connect

    Youngblood, G. E.; Thomsen, E. C.; Henager, C. H.

    2013-11-01

    A combination 2/4-probe method was used to measure electrical resistances across a pure, monolithic CVD-SiC disc sample with contact resistance at the SiC/metallic electrode interfaces. By comparison of the almost simultaneous 2/4-probe measurements, the specific contact resistance (Rc) and its temperature dependence were determined for two types (sputtered gold and porous nickel) electrodes from room temperature (RT) to ~973 K. The Rc-values behaved similarly for each type of metallic electrode: Rc > ~1000 Ω cm2 at RT, decreasing continuously to ~1–10 Ω cm2 at 973 K. The temperature dependence of the inverse Rc indicated thermally activated electrical conduction across the SiC/metallic interface with an apparent activation energy of ~0.3 eV. Finally, for the flow channel insert application in a fusion reactor blanket, contact resistance potentially could reduce the transverse electrical conductivity by about 50%.

  7. Soft, conformable electrical contacts for organic semiconductors: High-resolution plastic circuits by lamination

    PubMed Central

    Loo, Yueh-Lin; Someya, Takao; Baldwin, Kirk W.; Bao, Zhenan; Ho, Peter; Dodabalapur, Ananth; Katz, Howard E.; Rogers, John A.

    2002-01-01

    Soft, conformable electrical contacts provide efficient, noninvasive probes for the transport properties of chemically and mechanically fragile, ultrathin organic semiconducting films. When combined with high-resolution printing and lamination techniques, these soft contacts also form the basis of a powerful technique for fabricating flexible plastic circuits. In this approach, a thin elastomeric film on a plastic substrate supports the electrodes and interconnections; laminating this substrate against another plastic substrate that supports the gate, dielectric and semiconductor levels establishes effective electrical contacts and completes the circuits. In addition to eliminating many of the problems associated with traditional layer-by-layer fabrication strategies, this lamination scheme possesses other attractive features: the transistors and circuit elements are naturally and efficiently encapsulated, and the active organic semiconductor layer is placed near the neutral mechanical plane. We demonstrate the features of soft, laminated contacts by fabricating large arrays of high-performance thin film transistors on plastic substrates by using a wide variety of organic semiconductors. PMID:12145323

  8. Modification of Silver/Single-Wall Carbon Nanotube Electrical Contact Interfaces via Ion Irradiation.

    PubMed

    Cox, Nathanael D; Cress, Cory D; Rossi, Jamie E; Puchades, Ivan; Merrill, Andrew; Franklin, Aaron D; Landi, Brian J

    2017-03-01

    Introduction of defects via ion irradiation ex situ to modify silver/single-wall carbon nanotube (Ag-SWCNT) electrical contacts and the resulting changes in the electrical properties were studied. Two test samples were fabricated by depositing 0.1 μm Ag onto SWCNT thin films with average thicknesses of 10 and 60 nm, followed by ion irradiation (150 keV (11)B(+) at 5 × 10(14) ions/cm(2)). The contact resistance (Rc) between the Ag and SWCNT thin films was determined using transfer length method (TLM) measurements before and after ion irradiation. Rc increases for both test samples after irradiation, while there is no change in Rc for control structures with thick Ag contacts (1.5 μm), indicating that changes in Rc originate from changes in the SWCNT films and at the Ag-SWCNT interface caused by ion penetration through the Ag contact electrodes. Rc increases by ∼4× for the 60 nm SWCNT structure and increases by ∼2.4× for the 10 nm SWCNT structure. Raman spectroscopy measurements of the SWCNTs under the contacts compared to the starting SWCNT film show that the degradation of the 10 nm SWCNT structure was less significant than that of the 60 nm SWCNT structure, suggesting that the smaller change in Rc for the 10 nm SWCNT structure is a result of the thickness-dependent damage profile in the SWCNTs. Despite the increase in overall contact resistance, further TLM analysis reveals that the specific contact resistance actually decreases by ∼3.5-4× for both test samples, suggesting an enhancement of the electrical properties at the Ag-SWCNT interface. Irradiation simulations provide a physical description of the underlying mechanism, revealing that Ag atoms are forward-scattered into the SWCNTs, creating an Ag/C interfacial layer several nanometers in depth. The collective results indicate competing effects of improvement of the Ag-SWCNT interface versus degradation of the bulk SWCNT films, which has implications for scaled high-performance devices employing

  9. Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO

    SciTech Connect

    Kim, Sang-Ho; Kim, Han-Ki; Seong, Tae-Yeon

    2005-01-10

    We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n-type ZnO ({approx}5x10{sup 15}cm{sup -3}) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH{sub 4}){sub 2}S{sub x} solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75x10{sup -10} A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the Pt/ZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

  10. Materials selection and evaluation of Copper-Tungsten particulate composites for extreme electrical contacts

    NASA Astrophysics Data System (ADS)

    Watkins, Bobby Gene, II

    2011-12-01

    Materials for extreme electrical contacts need to have high electrical conductivity coupled with good structural properties. Potential applications include motor contacts, high power switches, and the components of electromagnetic launch (EML) systems. The lack of durability experienced with these contact materials limits service life. Due to extreme current densities coupled with the local sliding, electrical contact surfaces can degrade due to a one or more wear mechanisms, including adhesive wear and thermally-assisted wear associated with extreme local Joule heating. A systematic materials selection procedure was developed to identify and compare candidate materials that would be more durable for these types of applications. The most promising materials identified on the Pareto frontier are tungsten alloys. Moreover, several possible candidate monolithic materials as well as hybrid materials that could potentially be even better, filling the "white spaces" on the material property charts, were identified. A couple of these potential candidate materials were obtained and evaluated. These included copper-tungsten W-Cu, "self-lubricating" graphite-impregnated Cu, and Gr-W-Cu composites with different volume fractions of the constituents. The structure-property relations were determined through mechanical and electrical resistivity testing. A unique test protocol for exposing mechanical test specimens to extreme current densities up to 1.2 GA/m2 was developed and used to evaluate these candidate materials. The design of materials including optimizing the microstructure attributes for these applications can potentially be accelerated by using micromechanics modeling and other materials design tools coupled with systematic mechanical and tribological experiments. In this study, physics- and micromechanics-based models were used to correlate properties to the volume fraction of the tungsten. These properties included elastic modulus, hardness, tensile strength, and

  11. Multiple pole electromagnetic propulsion system with separated ballistic guidance and electrical current contact surfaces

    DOEpatents

    Sims, Jr., James R.

    2008-07-15

    An electromagnetic propulsion system is disclosed having separate rails for ballistic guidance and for carrying current. In this system, one or more pairs of ballistic guidance rails are provided, with each ballistic guidance rail having a pair of current carrying rails joined to it to form a combined rail. Each combined rail is separated electrically from adjacent combined rails by electrically insulating blocks. Each of the current carrying rails in a given combined rail pair have the same electrical polarity, and the polarities alternate between adjacent combined rails. Armatures contact current carrying rails to complete the circuit to generate the accelerating Lorentz force on the armatures. Bore riders on the sabot and/or projectile are in contact with the ballistic guide rails. Separation of the current carrying and ballistic guidance functions increases resistance of the system to rail movement and bending, as well as reduced wear/damage to the rails. In further embodiments, a circumferential over wrap providing compressive force on the rails further increases resistance of the system to rail movement and bending.

  12. A thin silicon thermoelectric nanowire characterization platform (TNCP) equipped with nanoporous electrodes for electrical contact formation

    NASA Astrophysics Data System (ADS)

    Hoda Moosavi, S.; Kroener, Michael; Frei, Maxi; Frick, Fabian; Kerzenmacher, Sven; Woias, Peter

    2016-10-01

    We report on the fabrication of a silicon platform for the thermoelectric and structural characterization of single nanowires, equipped with nanoporous electrodes. Controlled wafer thinning to a thickness of 160 μm results in platform chips, which can be inserted into Transmission Electron Microscopes (TEM) for the nanowire's structural composition analysis. Our fabrication approach comprises the Bosch process (ICP), and "dicing before grinding" techniques to achieve this small thickness. To study the idea of developing a “plug-and-measure” platform, we have developed a novel approach for selfadhesion between a contact electrode and a nanowire by nanoporous electrodes. Due to the increased surface-to-volume ratio and increased van-der-Walls forces nanowires stick firmly to the electrodes for a good thermal and electrical connection. This innovative technique does also avoids, in best case, separate steps for contact formation.

  13. Chemical Degradation of the Cathodic Electrical Contact Between Carbon and Cast Iron in Aluminum Production Cells

    NASA Astrophysics Data System (ADS)

    Brassard, Martin; Désilets, Martin; Soucy, Gervais; Bilodeau, Jean-François; Forté, Martin

    2017-06-01

    The cathodic carbon to cast iron electrical contact degradation is one of the factors to consider in the cathode voltage drop (CVD) increase over the lifetime of aluminum production cells. Lab-scale experiments were carried out to study the cast iron to carbon interface chemical degradation and the impact of important cell parameters like temperature and bath chemistry. Laboratory degradation results were compared with industrial samples. A thermoelectric Ansys numerical model was then used to predict the effect of cast iron surface degradation over CVD. Results show that the aluminum formation on the cast iron surface and its subsequent diffusion creates an immiscible mixture of Fe-Al metal alloy and electrolytic bath. Disparities were also observed between industrial samples taken from two different technologies, suggesting that the degradation can be slowed down. Thermoelectric calculations finally revealed that the impact of the contact resistance augmentation is by far greater than the cast iron degradation.

  14. Chemical Degradation of the Cathodic Electrical Contact Between Carbon and Cast Iron in Aluminum Production Cells

    NASA Astrophysics Data System (ADS)

    Brassard, Martin; Désilets, Martin; Soucy, Gervais; Bilodeau, Jean-François; Forté, Martin

    2017-02-01

    The cathodic carbon to cast iron electrical contact degradation is one of the factors to consider in the cathode voltage drop (CVD) increase over the lifetime of aluminum production cells. Lab-scale experiments were carried out to study the cast iron to carbon interface chemical degradation and the impact of important cell parameters like temperature and bath chemistry. Laboratory degradation results were compared with industrial samples. A thermoelectric Ansys numerical model was then used to predict the effect of cast iron surface degradation over CVD. Results show that the aluminum formation on the cast iron surface and its subsequent diffusion creates an immiscible mixture of Fe-Al metal alloy and electrolytic bath. Disparities were also observed between industrial samples taken from two different technologies, suggesting that the degradation can be slowed down. Thermoelectric calculations finally revealed that the impact of the contact resistance augmentation is by far greater than the cast iron degradation.

  15. Electrical characteristics of Ni Ohmic contact on n-type GeSn

    SciTech Connect

    Li, H.; Cheng, H. H.; Lee, L. C.; Lee, C. P.; Su, L. H.; Suen, Y. W.

    2014-06-16

    We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 °C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity.

  16. Note: Electrical resolution during conductive atomic force microscopy measurements under different environmental conditions and contact forces

    SciTech Connect

    Lanza, M.; Porti, M.; Nafria, M.; Aymerich, X.; Whittaker, E.; Hamilton, B.

    2010-10-15

    Conductive atomic force microscopy experiments on gate dielectrics in air, nitrogen, and UHV have been compared to evaluate the impact of the environment on topography and electrical measurements. In current images, an increase of the lateral resolution and a reduction of the conductivity were observed in N{sub 2} and, especially, in UHV (where current depends also on the contact force). Both effects were related to the reduction/elimination of the water layer between the tip and the sample in N{sub 2}/UHV. Therefore, since current measurements are very sensitive to environmental conditions, these factors must be taken into consideration when comparisons between several experiments are performed.

  17. Contact metal-dependent electrical transport in carbon nanotubes and fabrication of graphene nanoribbons

    NASA Astrophysics Data System (ADS)

    Perello, David

    In this thesis, we fabricate and characterize carbon nanotube (CNT) and graphene-based field effect transistor devices. The CNT-based work centers around the physics of metal contacts to CNT, particularly relating the work function of contact metals to carrier transport across the junction. The graphene work is motivated by the desire to utilize the high carrier mobility of graphene in field effect transistors. CNT have excellent electrical properties including high carrier mobility, large field effect switching capabilities, and a long mean free path. Absent, however is an experimentally-backed model explaining contact-metal work function, device layout, and environment effects. To fill this void, we introduce a surface-inversion channel (SIC) model based on low temperature and electrical measurements of a distinct single-walled semiconducting CNT contacted by Hf, Cr, Ti and Pd electrodes. Anomalous barrier heights and metal-contact dependent band-to-band tunneling phenomena are utilized to show that dependent upon contact work function and gate field, transport occurs either directly between the metal and CNT channel or indirectly via injection of carriers from the metal-covered CNT region to the CNT channel. The model is consistent with previously contradictory experimental results, and the methodology is simple enough to apply in other contact-dominant systems. In agreement with the initial contact theory above, we further develop a model explain Isd-Vsd tendencies in CNT FETs. Using experimental and analytical analysis, we demonstrate a relationship between the contact metal work function and electrical transport properties saturation current (Isat) and differential conductance ssd=6Isd 6Vsd in ambient exposed CNT. A single chemical vapor deposition (CVD)-grown 6 millimeter long semiconducting single-walled CNT is electrically contacted with a statistically significant number of Hf, Cr, Ti, Pd, and Ti, Au electrodes, respectively. The observed exponentially

  18. Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

    NASA Technical Reports Server (NTRS)

    Hall, J.; Chen, T. M.

    1991-01-01

    Virtually every device that makes use of the new ceramic superconductors will need normal conductor to superconductor contacts. The current-voltage and electrical noise characteristics of these contacts could become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quantity often used to characterize electrical noise, very closely followed an empirical relationship given by S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

  19. Analytical study of space processing of immiscible materials for superconductors and electrical contacts

    NASA Technical Reports Server (NTRS)

    Gelles, S. H.; Collings, E. W.; Abbott, W. H.; Maringer, R. E.

    1977-01-01

    The results of a study conducted to determine the role space processing or materials research in space plays in the superconductor and electrical contact industries are presented. Visits were made to manufacturers, users, and research organizations connected with these products to provide information about the potential benefits of the space environment and to exchange views on the utilization of space facilities for manufacture, process development, or research. In addition, space experiments were suggested which could result in improved terrestrial processes or products. Notable examples of these are, in the case of superconductors, the development of Nb-bronze alloys (Tsuei alloys) and, in the electrical contact field, the production of Ag-Ni or Ag-metal oxide alloys with controlled microstructure for research and development activities as well as for product development. A preliminary experimental effort to produce and evaluate rapidly cooled Pb-Zn and Cu-Nb-Sn alloys in order to understand the relationship between microstructure and superconducting properties and to simulate the fine structure potentially achievable by space processing was also described.

  20. Dry-contact microelectrode membranes for wireless detection of electrical phenotypes in neonatal mouse hearts.

    PubMed

    Zhao, Yu; Cao, Hung; Beebe, Tyler; Zhang, Hemin; Zhang, Xiaoxiao; Chang, Honglong; Scremin, Oscar; Lien, Ching-Ling; Tai, Yu-Chong; Hsiai, Tzung K

    2015-04-01

    Continuous monitoring of aberrant electrical rhythms during heart injury and repair requires prolonged data acquisition. We hereby developed a wearable microelectrode membrane that could be adherent to the chest of neonatal mice for in situ wireless recording of electrocardiogram (ECG) signals. The novel dry-contact membrane with a meshed parylene-C pad adjacent to the microelectrodes and the expandable meandrous strips allowed for varying size of the neonates. The performance was evaluated at the system level; specifically, the ECG signals (μV) acquired from the microelectrodes underwent two-stage amplification, band-pass filtering, and optical data transmission by an infrared Light Emitting Diode (LED) to the data-receiving unit. The circuitry was prototyped on a printed circuit board (PCB), consuming less than 300 μW, and was completely powered by an inductive coupling link. Distinct P waves, QRS complexes, and T waves of ECG signals were demonstrated from the non-pharmacologically sedated neonates at ~600 beats per minutes. Thus, we demonstrate the feasibility of both real-time and wireless monitoring cardiac rhythms in a neonatal mouse (17-20 mm and <1 g) via dry-contact microelectrode membrane; thus, providing a basis for diagnosing aberrant electrical conduction in animal models of cardiac injury and repair.

  1. Carbon nanotubes/fluorinated polymers nanocomposite thin films for electrical contacts lubrication

    NASA Astrophysics Data System (ADS)

    Benedetto, A.; Viel, P.; Noël, S.; Izard, N.; Chenevier, P.; Palacin, S.

    2007-09-01

    The need to operate in extreme environmental conditions (ultra high vacuum, high temperatures, aerospatial environment, …) and the miniaturization toward micro electromechanical systems is demanding new materials in the field of low-level electrical contacts lubrication. Dry and chemically immobilized lubrication is expected to be an alternative to the traditional wet lubricants oils. With the goal to conciliate electrical conductivity and lubricant properties we designed nanocomposite thin films composed of a 2D carbon nanotubes network embedded in an organic matrix. The nanotubes networks were deposited on gold surfaces modified by electrochemical cathodic grafting of poly(acrylonitrile). The same substrate served for covalently bonding the low-friction organic matrix. Three different matrixes were tested: a perfluorinated oligomer chemically grafted and two different polyfluorinated acrylates electrochemically grafted. The nanocomposite thin films have been characterized by ATR FT-IR, XPS and Raman spectroscopy. We measured the effects of the different matrixes and the nanotubes addition on the tribological properties and on the contact resistances of the films.

  2. Realization of an all-electric spin transistor using quantum point contacts

    NASA Astrophysics Data System (ADS)

    Chen, Tse-Ming; Chuang, Pojen; Ho, Sheng-Chin; Smith, Luke; Sfigakis, Francois; Pepper, Michael; Chen, Chin-Hung; Fan, Ju-Chun; Griffiths, Jonathan; Farrer, Ian; Beere, Harvey; Jones, Geb; Ritchie, Dave

    The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field effect transistor for information processing has yet to be achieved, owing to several fundamental challenges such as the low spin-injection efficiency due to resistance mismatch, spin relaxation, and the spread of spin precession angles. Alternative spin transistor designs have therefore been proposed, but these differ from the field effect transistor concept and require the use of optical or magnetic elements, which pose difficulties for the incorporation into integrated circuits. Here, we present an all-electric all-semiconductor spin field effect transistor, in which these obstacles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct engineering architectures of spin-orbit coupling are exploited for the quantum point contacts and the central semiconductor channel to achieve complete control of the electron spins--spin injection, manipulation, and detection--in a purely electrical manner. Such a device is compatible with large-scale integration and hold promise for future spintronic devices for information processing. Ref: P. Chuang et al., Nat. Nanotechnol. 10, 35 (2015).

  3. Comparison of optical and electrical measurements of the pantograph-catenary contact force

    NASA Astrophysics Data System (ADS)

    Bocciolone, Marco; Bucca, Giuseppe; Collina, Andrea; Comolli, Lorenzo

    2010-09-01

    In railway engineering the monitoring of contact force between pantograph and catenary gives information about the interaction between the two systems and it is useful to check the status of the overhead line. Indeed the failure of the catenary is one of the main causes of out of order problems. This study was conducted in a test campaign on an underground train instrumented with sensors able to monitor the line status. One of the more important measured quantities is the pantograph contact force, and two measurement systems were implemented: one optical and another electrical. The optical one was based on FBG sensors applied on the pantograph collector strip; the electrical one was based on two load cells positioned at the sides of the collector strip. The in-line measurements show that the optical solution is very promising, providing very reliable results that can be successfully used in the monitoring application, allowing the determination of the critical point in the line. The thermal compensation of any FBG sensors is a known problem and here is no exception: a thermal compensator was used to get also mean value measurements and the results are discussed.

  4. Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

    PubMed

    Kim, Changsik; Moon, Inyong; Lee, Daeyeong; Choi, Min Sup; Ahmed, Faisal; Nam, Seunggeol; Cho, Yeonchoo; Shin, Hyeon-Jin; Park, Seongjun; Yoo, Won Jong

    2017-02-28

    Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (Rc). Until now, Fermi level pinning of monolayer TMDCs has been reported only theoretically, although that of bulk TMDCs has been reported experimentally. Here, we report the experimental study on Fermi level pinning of monolayer MoS2 and MoTe2 by interpreting the thermionic emission results. We also quantitatively compared our results with the theoretical simulation results of the monolayer structure as well as the experimental results of the bulk structure. We measured the pinning factor S to be 0.11 and -0.07 for monolayer MoS2 and MoTe2, respectively, suggesting a much stronger Fermi level pinning effect, a Schottky barrier height (SBH) lower than that by theoretical prediction, and interestingly similar pinning energy levels between monolayer and bulk MoS2. Our results further imply that metal work functions have very little influence on contact properties of 2D-material-based devices. Moreover, we found that Rc is exponentially proportional to SBH, and these processing parameters can be controlled sensitively upon chemical doping into the 2D materials. These findings provide a practical guideline for depinning Fermi level at the 2D interfaces so that polarity control of TMDC-based semiconductors can be achieved efficiently.

  5. Numerical simulation for arc-plasma dynamics during contact opening process in electrical circuit-breakers

    NASA Astrophysics Data System (ADS)

    Gupta, D. N.; Patil, G. N.; Srinivas, D.; Kale, S. S.; Potnis, S. B.

    2010-02-01

    The high-energy, high-current thermal plasma that develops between electric contacts in a gas circuit-breaker during circuit interruption is an important phenomenon in the power transmission industry. The high temperature and pressure arc dissipates the tremendous amount of energy generated by the fault current. Simultaneously, this energy has to be transferred away from the contacts to build the dielectric strength level of the circuit-breaker. In order to interrupt the current, the arc must be weakened and finally extinguished. We model these phenomena by using a computer software code based on the solution of the unsteady Euler equations of gas dynamics. We consider the equations of fluid flows. These equations are solved numerically in complex circuit breaker geometries using a finite-volume method. The domain is initially filled with SF6 gas. We begin our simulations from cold mode, where the fault current is not present (hence no arc). An axis-symmetric geometry of a 145 kV gas circuit-breaker is considered to study the pressure, density, and temperature profile during contact opening process.

  6. Development of superconducting YBa2Cu3O(x) wires with low resistance electrical contacts

    NASA Astrophysics Data System (ADS)

    Buoncristiani, A. M.; Byvik, C. E.; Caton, R.; Selim, R.; Lee, B. I.; Modi, V.; Sherrill, M.; Leigh, H. D.; Fain, C. C.; Lewis, G.

    Materials exhibiting superconductivity above liquid nitrogen temperatures (77 K) will enable new applications of this phenomena. One of the first commercial applications of this technology will be superconducting magnets for medical imaging. However, a large number of aerospace applications of the high temperature superconducting materials have also been identified. These include magnetic suspension and balance of models in wind tunnels and resistanceless leads to anemometers. The development of superconducting wires fabricated from the ceramic materials is critical for these applications. The progress in application of a patented fiber process developed by Clemson University for the fabrication of superconducting wires is reviewed. The effect of particle size and heat treatment on the quality of materials is discussed. Recent advances made at Christopher Newport College in the development of micro-ohm resistance electrical contacts which are capable of carrying the highest reported direct current to this material is presented.

  7. Subwavelength grating as both emission mirror and electrical contact for VCSELs in any material system

    NASA Astrophysics Data System (ADS)

    Czyszanowski, Tomasz; Gebski, Marcin; Dems, Maciej; Wasiak, Michał; Sarzała, Robert; Panajotov, Krassimir

    2017-01-01

    Semiconductor-metal subwavelength grating (SMSG) can serve a dual purpose in vertical-cavity surface-emitting lasers (VCSELs), as both optical coupler and current injector. SMSGs provide optical as well as lateral current confinement, eliminating the need for ring contacts and lateral build-in optical and current confinement, allowing their implementation on arbitrarily large surfaces. Using an SMSG as the top mirror enables fabrication of monolithic VCSELs from any type of semiconductor crystal. The construction of VCSELs with SMSGs requires significantly less p-type material, in comparison to conventional VCSELs. In this paper, using a three-dimensional, fully vectorial optical model, we analyse the properties of the stand-alone SMSG in a number of semiconductor materials for a broad range of wavelengths. Integrating the optical model with thermal and electrical numerical models, we then simulate the threshold operation of an exemplary SMSG VCSEL.

  8. Subwavelength grating as both emission mirror and electrical contact for VCSELs in any material system

    PubMed Central

    Czyszanowski, Tomasz; Gebski, Marcin; Dems, Maciej; Wasiak, Michał; Sarzała, Robert; Panajotov, Krassimir

    2017-01-01

    Semiconductor-metal subwavelength grating (SMSG) can serve a dual purpose in vertical-cavity surface-emitting lasers (VCSELs), as both optical coupler and current injector. SMSGs provide optical as well as lateral current confinement, eliminating the need for ring contacts and lateral build-in optical and current confinement, allowing their implementation on arbitrarily large surfaces. Using an SMSG as the top mirror enables fabrication of monolithic VCSELs from any type of semiconductor crystal. The construction of VCSELs with SMSGs requires significantly less p-type material, in comparison to conventional VCSELs. In this paper, using a three-dimensional, fully vectorial optical model, we analyse the properties of the stand-alone SMSG in a number of semiconductor materials for a broad range of wavelengths. Integrating the optical model with thermal and electrical numerical models, we then simulate the threshold operation of an exemplary SMSG VCSEL. PMID:28079149

  9. Development of superconducting YBa2Cu3O(x) wires with low resistance electrical contacts

    NASA Technical Reports Server (NTRS)

    Buoncristiani, A. M.; Byvik, C. E.; Caton, R.; Selim, R.; Lee, B. I.; Modi, V.; Sherrill, M.; Leigh, H. D.; Fain, C. C.; Lewis, G.

    1993-01-01

    Materials exhibiting superconductivity above liquid nitrogen temperatures (77 K) will enable new applications of this phenomena. One of the first commercial applications of this technology will be superconducting magnets for medical imaging. However, a large number of aerospace applications of the high temperature superconducting materials have also been identified. These include magnetic suspension and balance of models in wind tunnels and resistanceless leads to anemometers. The development of superconducting wires fabricated from the ceramic materials is critical for these applications. The progress in application of a patented fiber process developed by Clemson University for the fabrication of superconducting wires is reviewed. The effect of particle size and heat treatment on the quality of materials is discussed. Recent advances made at Christopher Newport College in the development of micro-ohm resistance electrical contacts which are capable of carrying the highest reported direct current to this material is presented.

  10. Effect of graphene addition on properties of Cu-based composites for electrical contacts

    NASA Astrophysics Data System (ADS)

    Liu, Huanchao; Teng, Xinying; Wu, Weibing; Wu, Xiangwei; Leng, Jinfeng; Geng, Haoran

    2017-06-01

    In this paper, graphene was used as an additive in Cu-based composites employed as electrical contacts. In order to solve the problem of interface bonding between graphene and copper matrix, electroless silver coating on graphene and copper powder were investigated. The Gr/Cu composites were prepared by ball milling and cold compacting sintering process. The mechanical and physicochemical properties including hardness, relative density, conductivity and oxidation resistance were tested. Based on the comprehensive analysis of the microstructure and properties of the materials, the optimum additive amount of graphene was 0.2 wt.%. The relative density, hardness, oxidation weight gain and IACS of the materials obtained by the optimum process parameters were 90.0%, 53.4HB, 1.6 mg cm-2 and 76.2%, respectively.

  11. Magnetic induction spectroscopy: non-contact measurement of the electrical conductivity spectra of biological samples

    NASA Astrophysics Data System (ADS)

    Barai, A.; Watson, S.; Griffiths, H.; Patz, R.

    2012-08-01

    Measurement of the electrical conductivity of biological tissues as a function of frequency, often termed ‘bioelectrical impedance spectroscopy (BIS)’, provides valuable information on tissue structure and composition. In implementing BIS though, there can be significant practical difficulties arising from the electrode-sample interface which have likely limited its deployment in industrial applications. In magnetic induction spectroscopy (MIS) these difficulties are eliminated through the use of fully non-contacting inductive coupling between the sensors and sample. However, inductive coupling introduces its own set of technical difficulties, primarily related to the small magnitudes of the induced currents and their proportionality with frequency. This paper describes the design of a practical MIS system incorporating new, highly-phase-stable electronics and compares its performance with that of electrode-based BIS in measurements on biological samples including yeast suspensions in saline (concentration 50-400 g l-1) and solid samples of potato, cucumber, tomato, banana and porcine liver. The shapes of the MIS spectra were in good agreement with those for electrode-based BIS, with a residual maximum discrepancy of 28%. The measurement precision of the MIS was 0.05 S m-1 at 200 kHz, improving to 0.01 S m-1 at a frequency of 20 MHz, for a sample volume of 80 ml. The data-acquisition time for each MIS measurement was 52 s. Given the value of spectroscopic conductivity information and the many advantages of obtaining these data in a non-contacting manner, even through electrically-insulating packaging materials if necessary, it is concluded that MIS is a technique with considerable potential for monitoring bio-industrial processes and product quality.

  12. Single-molecule electrical contacts on silicon electrodes under ambient conditions

    NASA Astrophysics Data System (ADS)

    Aragonès, Albert C.; Darwish, Nadim; Ciampi, Simone; Sanz, Fausto; Gooding, J. Justin; Díez-Pérez, Ismael

    2017-04-01

    The ultimate goal in molecular electronics is to use individual molecules as the active electronic component of a real-world sturdy device. For this concept to become reality, it will require the field of single-molecule electronics to shift towards the semiconducting platform of the current microelectronics industry. Here, we report silicon-based single-molecule contacts that are mechanically and electrically stable under ambient conditions. The single-molecule contacts are prepared on silicon electrodes using the scanning tunnelling microscopy break-junction approach using a top metallic probe. The molecular wires show remarkable current-voltage reproducibility, as compared to an open silicon/nano-gap/metal junction, with current rectification ratios exceeding 4,000 when a low-doped silicon is used. The extension of the single-molecule junction approach to a silicon substrate contributes to the next level of miniaturization of electronic components and it is anticipated it will pave the way to a new class of robust single-molecule circuits.

  13. Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1993-01-01

    The electrical and metallurgical behavior of the Ag-InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10 exp -6 Ohm sq cm range are readily achieved on n-InP (Si: 1.7 x 10 exp 18/cu cm) after sintering at 400 C for several minutes. The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device degradation. An analysis of the sinter-induced metallurgical interactions shows this system to be similar to the well-characterized Au-InP system, albeit with fundamental differences. The similarities include the dissociative diffusion of In, the reaction-suppressing effect of SiO2 capping, and especially, the formation of a phosphide layer at the metal-InP interface. The low post-sinter Rc values in the Ag-InP system may be due to the presence of a AgP2 layer at the metal-InP interface; low values of Rc can be achieved without incurring device degrading metallurgical interactions by introducing a thin AgP2 layer between the InP and the current carrying metallization.

  14. Low resistance silver contacts to indium phosphide - Electrical and metallurgical considerations

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1993-01-01

    The electrical and metallurgical behavior of the Ag-InP contact system has been investigated. Specific contact resistivity (Rc) values in the low 10 exp -6 Ohm sq cm range are readily achieved on n-InP (Si: 1.7 x 10 exp 18/cu cm) after sintering at 400 C for several minutes. The low Rc values, however, are shown to be accompanied by dissolution of InP into the metallization, resulting in device degradation. An analysis of the sinter-induced metallurgical interactions shows this system to be similar to the well-characterized Au-InP system, albeit with fundamental differences. The similarities include the dissociative diffusion of In, the reaction-suppressing effect of SiO2 capping, and especially, the formation of a phosphide layer at the metal-InP interface. The low post-sinter Rc values in the Ag-InP system may be due to the presence of a AgP2 layer at the metal-InP interface; low values of Rc can be achieved without incurring device degrading metallurgical interactions by introducing a thin AgP2 layer between the InP and the current carrying metallization.

  15. the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics

    SciTech Connect

    Torkhov, N. A.; Novikov, V. A.

    2011-01-15

    During the formation of the metal-semiconductor contact with a Schottky barrier (as a gold film on the p- or n-type gallium arsenide surface), an electric field E{sub l} built into the electric contact is induced, which propagates around the contact to the distance l (halo) tens of times larger than space-charge region sizes. This field reduces the electrostatic potential of the {phi}{sub Au} contact by a significant value {phi}*. In the general case, the halo size l and the decrease {phi}* in the electrostatic potential are controlled by the charge value and sign in the space-charge region, which depend on the contact diameter D, semiconductor concentration and conductivity type. For Au/n-GaAs Schottky-barrier contacts, a decrease in D results in the increasing role of periphery, which manifests itself in increasing {phi}* and decreasing {phi}{sub Au} and l. For Au/p-GaAs contacts, a decrease in D results in the decreasing effect of periphery, which appears in decreasing {phi}* and increasing {phi}{sub Au} and l. The absence of the space-charge region in metal-insulator-semiconductor contacts results in the fact that the halo size l and {phi}* are independent of their diameters.

  16. Stress Induced Mechano-electrical Writing-Reading of Polymer Film Powered by Contact Electrification Mechanism

    PubMed Central

    Goswami, Sumita; Nandy, Suman; Calmeiro, Tomás R.; Igreja, Rui; Martins, Rodrigo; Fortunato, Elvira

    2016-01-01

    Mechano-electrical writing and reading in polyaniline (PANI) thin film are demonstrated via metal-polymer contact electrification mechanism (CEM). An innovative conception for a non-destructive self-powered writable-readable data sheet is presented which can pave the way towards new type of stress induced current harvesting devices. A localized forced deformation of the interface has been enacted by pressing the atomic force microscopic probe against the polymer surface, allowing charge transfer between materials interfaces. The process yields a well-defined charge pattern by transmuting mechanical stress in to readable information. The average of output current increment has been influenced from 0.5 nA to 15 nA for the applied force of 2 nN to 14 nN instead of electrical bias. These results underscore the importance of stress-induced current harvesting mechanism and could be scaled up for charge patterning of polymer surface to writable-readable data sheet. Time evolutional current distribution (TECD) study of the stress-induced patterned PANI surface shows the response of readability of the recorded data with time. PMID:26786701

  17. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts

    SciTech Connect

    Voss, L F; Shao, Q; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-03-05

    Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electrical continuity over a 3D pillar structure.

  18. Stress Induced Mechano-electrical Writing-Reading of Polymer Film Powered by Contact Electrification Mechanism

    NASA Astrophysics Data System (ADS)

    Goswami, Sumita; Nandy, Suman; Calmeiro, Tomás R.; Igreja, Rui; Martins, Rodrigo; Fortunato, Elvira

    2016-01-01

    Mechano-electrical writing and reading in polyaniline (PANI) thin film are demonstrated via metal-polymer contact electrification mechanism (CEM). An innovative conception for a non-destructive self-powered writable-readable data sheet is presented which can pave the way towards new type of stress induced current harvesting devices. A localized forced deformation of the interface has been enacted by pressing the atomic force microscopic probe against the polymer surface, allowing charge transfer between materials interfaces. The process yields a well-defined charge pattern by transmuting mechanical stress in to readable information. The average of output current increment has been influenced from 0.5 nA to 15 nA for the applied force of 2 nN to 14 nN instead of electrical bias. These results underscore the importance of stress-induced current harvesting mechanism and could be scaled up for charge patterning of polymer surface to writable-readable data sheet. Time evolutional current distribution (TECD) study of the stress-induced patterned PANI surface shows the response of readability of the recorded data with time.

  19. Deep-level dominated electrical characteristics of Au contacts on beta-SiC

    NASA Technical Reports Server (NTRS)

    Das, K.; Kong, H. S.; Petit, J. B.; Bumgarner, J. W.; Davis, R. F.; Matus, L. G.

    1990-01-01

    Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

  20. Effect of polymer admixtures to cement on the bond strength and electrical contact resistivity between steel fiber and cement

    SciTech Connect

    Fu, X.; Chung, D.D.L.

    1996-02-01

    The addition of methylcellulose (0.4% by weight of cement) or latex (20% by weight of cement) to cement paste gave similarly significant increases of the shear bond strength between stainless steel fiber and cement paste, in spite of the low concentration of methylcellulose compared to latex. The methylcellulose addition did not affect the contact electrical resistivity between fiber and cement, whereas the latex addition increased this resistivity. Hence, for low cost and low contact resistivity, methylcellulose is preferred to latex. For a given cement paste composition, the bond strength increased linearly with the contact resistivity.

  1. The mathematical models of electromagnetic field dynamics and heat transfer in closed electrical contacts including Thomson effect

    NASA Astrophysics Data System (ADS)

    Kharin, Stanislav; Sarsengeldin, Merey; Kassabek, Samat

    2016-08-01

    We represent mathematical models of electromagnetic field dynamics and heat transfer in closed symmetric and asymmetric electrical contacts including Thomson effect, which are essentially nonlinear due to the dependence of thermal and electrical conductivities on temperature. Suggested solutions are based on the assumption of identity of equipotentials and isothermal surfaces, which agrees with experimental data and valid for both linear and nonlinear cases. Well known Kohlrausch temperature-potential relation is analytically justified.

  2. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb

    SciTech Connect

    Rahimi, Nassim Aragon, Andrew A.; Romero, Orlando S.; Shima, Darryl M.; Rotter, Thomas J.; Mukherjee, Sayan D.; Balakrishnan, Ganesh; Lester, Luke F.

    2013-12-01

    Ultra low resistance ohmic contacts are fabricated on n-GaSb grown by molecular beam epitaxy. Different doping concentrations and n-GaSb thicknesses are studied to understand the tunneling transport mechanism between the metal contacts and the semiconductor. Different contact metallization and anneal process windows are investigated to achieve optimal penetration depth of Au in GaSb for low resistances. The fabrication, electrical characterization, and microstructure analysis of the metal-semiconductor interfaces created during ohmic contact formation are discussed. The characterization techniques include cross-sectional transmission electron microscopy and energy dispersive spectroscopy. Specific transfer resistances down to 0.1 Ω mm and specific contact resistances of 1 × 10{sup −6} Ω cm{sup 2} are observed.

  3. Effects of composition and age hardening on precious metal electrical contacts

    SciTech Connect

    Pope, L.E.; Peebles, D.E.

    1988-01-01

    Precious metal alloys are commonly used for wiper electrical contacts in electromechanical devices which operate in dry and inert atmospheres. A pin-on-plate experimental configuration has been used to evaluate two different palladium alloy pins (ASTM B540 and ASTM B563) sliding on a gold alloy plate (ASTM B541) age hardened at two temperatures. For all combinations of test conditions except the higher palladium content alloy (ASTM B563), two stages of wear were observed: (1) a prow of Au alloy was formed on the palladium alloy pin and (2) work hardening and roughening of the wear track occurred with transfer and backtransfer of Au alloy material. With the higher palladium alloy pin (ASTM B563) a friction polymer was formed for laboratory air testing. The prow formed on the pin was a mechanical mixture of gold alloy plate and palladium alloy pin materials; palladium was found in the wear track for this experimental condition, while no palladium was found in wear tracks for the other test conditions. Segregation of zinc, silver and copper in wear tracks occurred for all test conditions, but the extent of segregation was dependent on contact couple combination and heat treatment of the gold alloy plate. The least amount of segregation was observed when the gold alloy plate was age hardened at 426 /degree/C. More segregation occurred for testing in helium than for testing in vacuum with a low partial pressure of oxygen. The largest segregation of metallic elements occurred for laboratory air testing, but the total metallic content of wear tracks was low; the wear tracks consisted primarily of carbon. Segregation was slightly larger with the higher palladium alloy (ASTM B563) pin.

  4. Modification of a scanning electron microscope (SEM) for insitu, nanometer size contact, electrical measurements of III-nitride transistors

    NASA Astrophysics Data System (ADS)

    Selcu, Camelia; Yang, Zhichao; Krishnamoorthy, Sriram; Rajan, Siddharth

    As the transistors become smaller and smaller, proximity effects become important, therefore there is a need for characterization instruments. We modified a scanning electron microscope (SEM) by adding the capability to make mechanical contacts to devices for electrical measurements with nanometer precision. We will discuss ongoing work involving III-nitride transistors and nanowires.

  5. In-situ contact electrical resistance technique for investigating corrosion inhibitor adsorption on copper electrodes

    SciTech Connect

    Moretti, G.; Quartarone, G.; Zingales, A.; Molokanov, V.V.

    1998-02-01

    Traditional electrochemical tests and the contact electrical resistance technique (CER) were used to investigate the effect on corrosion of pure copper (99.999 wt%) of adding benzotriazole (BTA) and 1-hydroxybenzotriazone (1-OH-BTA) to acidic solutions (sulfuric acid [H{sub 2}SO{sub 4}], pH = 1.7, and sodium sulfate [Na{sub 2}SO{sub 4}] until total sulfate [SO{sub 4}{sup 2{minus}}] concentration = 0.1 M). This technique permitted growth of oxide and/or salt films as well as adsorption of the organic inhibitors on the copper surface to be evaluated. Formation of copper oxide ([Cu{sub 2}O]{sub 2})., sulfate (CuSo{sub 4}{center_dot}5H{sub 2}O), thiocyanate (CuSCN), and halogenyde (CuI, CuBr, and CuCl) films on copper electrodes was followed in situ in sulfate solutions at various pH values under low overpotentials. Effects of pH, solution anion content, and/or the amount of BTA or 1-OH-BTA on electrical resistance (R) of the surface films formed on pure copper electrodes were treated. BTA acted as a more efficient corrosion inhibitor than 1-OH-BTA, reaching inhibition percentages (IP) of {approximately}90% compared to those of 1-OH-BTA, which reached a maximum of {approximately}76% in 2 {times} 10{sup {minus}3} M solutions. It was possible to distinguish between maximum R of the surface film, found in solutions containing BTA, associated with the adsorption of neutral inhibitor molecules, and the sharp rise in R attributable to [Cu(BTA)]{sub n} complex formation.

  6. Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers.

    PubMed

    Li, Song-Lin; Komatsu, Katsuyoshi; Nakaharai, Shu; Lin, Yen-Fu; Yamamoto, Mahito; Duan, Xiangfeng; Tsukagoshi, Kazuhito

    2014-12-23

    Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

  7. Efficient Simultaneous Reconstruction of Time-Varying Images and Electrode Contact Impedances in Electrical Impedance Tomography

    PubMed Central

    Boverman, Gregory; Isaacson, David; Newell, Jonathan C.; Saulnier, Gary J.; Kao, Tzu-Jen; Amm, Bruce C.; Wang, Xin; Davenport, David M.; Chong, David H.; Sahni, Rakesh; Ashe, Jeffrey M.

    2016-01-01

    In Electrical Impedance Tomography (EIT), we apply patterns of currents on a set of electrodes at the external boundary of an object, measure the resulting potentials at the electrodes, and, given the aggregate data set, reconstruct the complex conductivity and permittivity within the object. It is possible to maximize sensitivity to internal conductivity changes by simultaneously applying currents and measuring potentials on all electrodes but this approach also maximizes sensitivity to changes in impedance at the interface. We have therefore developed algorithms to assess contact impedance changes at the interface as well as to efficiently and simultaneously reconstruct internal conductivity/permittivity changes within the body. We use simple linear algebraic manipulations, the generalized SVD, and a dual-mesh finite-element-based framework to reconstruct images in real time. We are also able to efficiently compute the linearized reconstruction for a wide range of regularization parameters and to compute both the Generalized Cross-Validation (GCV) parameter as well as the L-curve, objective approaches to determining the optimal regularization parameter, in a similarly efficient manner. Results are shown using data from a normal subject and from a clinical ICU patient, both acquired with the GE GENESIS prototype EIT system, demonstrating significantly reduced boundary artifacts due to electrode drift and motion artifact. PMID:27295649

  8. Exploring New Mechanisms for Effective Antimicrobial Materials: Electric Contact-Killing Based on Multiple Schottky Barriers.

    PubMed

    de Lucas-Gil, Eva; Reinosa, Julián J; Neuhaus, Kerstin; Vera-Londono, Liliana; Martín-González, Marisol; Fernández, José F; Rubio-Marcos, Fernando

    2017-08-09

    The increasing threat of multidrug-resistance organisms is a cause for worldwide concern. Progressively microorganisms become resistant to commonly used antibiotics, which are a healthcare challenge. Thus, the discovery of new antimicrobial agents or new mechanisms different from those used is necessary. Here, we report an effective and selective antimicrobial activity of microstructured ZnO (Ms-ZnO) agent through the design of a novel star-shaped morphology, resulting in modulation of surface charge orientation. Specifically, we find that Ms-ZnO particles are composed of platelet stacked structure, which generates multiple Schottky barriers due to the misalignment of crystallographic orientations. We also demonstrated that this effect allows negative charge accumulation in localized regions of the structure to act as "charged domain walls", thereby improving the antimicrobial effectiveness by electric discharging effect. We use a combination of field emission scanning electron microscopy (FE-SEM), SEM-cathodoluminescence imaging, and Kelvin probe force microscopy (KPFM) to determine that the antimicrobial activity is a result of microbial membrane physical damage caused by direct contact with the Ms-ZnO agent. It is important to point out that Ms-ZnO does not use the photocatalysis or the Zn(2+) released as the main antimicrobial mechanism, so consequently this material would show low toxicity and robust stability. This approach opens new possibilities to understand both the physical interactions role as main antimicrobial mechanisms and insight into the coupled role of hierarchical morphologies and surface functionality on the antimicrobial activity.

  9. Non-contact thrust stand calibration method for repetitively pulsed electric thrusters.

    PubMed

    Wong, Andrea R; Toftul, Alexandra; Polzin, Kurt A; Pearson, J Boise

    2012-02-01

    A thrust stand calibration technique for use in testing repetitively pulsed electric thrusters for in-space propulsion has been developed and tested using a modified hanging pendulum thrust stand. In the implementation of this technique, current pulses are applied to a solenoid to produce a pulsed magnetic field that acts against a permanent magnet mounted to the thrust stand pendulum arm. The force on the magnet is applied in this non-contact manner, with the entire pulsed force transferred to the pendulum arm through a piezoelectric force transducer to provide a time-accurate force measurement. Modeling of the pendulum arm dynamics reveals that after an initial transient in thrust stand motion the quasi-steady average deflection of the thrust stand arm away from the unforced or "zero" position can be related to the average applied force through a simple linear Hooke's law relationship. Modeling demonstrates that this technique is universally applicable except when the pulsing period is increased to the point where it approaches the period of natural thrust stand motion. Calibration data were obtained using a modified hanging pendulum thrust stand previously used for steady-state thrust measurements. Data were obtained for varying impulse bit at constant pulse frequency and for varying pulse frequency. The two data sets exhibit excellent quantitative agreement with each other. The overall error on the linear regression fit used to determine the calibration coefficient was roughly 1%.

  10. Non-contact thrust stand calibration method for repetitively pulsed electric thrusters

    NASA Astrophysics Data System (ADS)

    Wong, Andrea R.; Toftul, Alexandra; Polzin, Kurt A.; Pearson, J. Boise

    2012-02-01

    A thrust stand calibration technique for use in testing repetitively pulsed electric thrusters for in-space propulsion has been developed and tested using a modified hanging pendulum thrust stand. In the implementation of this technique, current pulses are applied to a solenoid to produce a pulsed magnetic field that acts against a permanent magnet mounted to the thrust stand pendulum arm. The force on the magnet is applied in this non-contact manner, with the entire pulsed force transferred to the pendulum arm through a piezoelectric force transducer to provide a time-accurate force measurement. Modeling of the pendulum arm dynamics reveals that after an initial transient in thrust stand motion the quasi-steady average deflection of the thrust stand arm away from the unforced or "zero" position can be related to the average applied force through a simple linear Hooke's law relationship. Modeling demonstrates that this technique is universally applicable except when the pulsing period is increased to the point where it approaches the period of natural thrust stand motion. Calibration data were obtained using a modified hanging pendulum thrust stand previously used for steady-state thrust measurements. Data were obtained for varying impulse bit at constant pulse frequency and for varying pulse frequency. The two data sets exhibit excellent quantitative agreement with each other. The overall error on the linear regression fit used to determine the calibration coefficient was roughly 1%.

  11. Active electrode IC for EEG and electrical impedance tomography with continuous monitoring of contact impedance.

    PubMed

    Guermandi, Marco; Cardu, Roberto; Franchi Scarselli, Eleonora; Guerrieri, Roberto

    2015-02-01

    The IC presented integrates the front-end for EEG and Electrical Impedance Tomography (EIT) acquisition on the electrode, together with electrode-skin contact impedance monitoring and EIT current generation, so as to improve signal quality and integration of the two techniques for brain imaging applications. The electrode size is less than 2 cm(2) and only 4 wires connect the electrode to the back-end. The readout circuit is based on a Differential Difference Amplifier and performs single-ended amplification and frequency division multiplexing of the three signals that are sent to the back-end on a single wire which also provides power supply. Since the system's CMRR is a function of each electrode's gain accuracy, an analysis is performed on how this is influenced by mismatches in passive and active components. The circuit is fabricated in 0.35 μm CMOS process and occupies 4 mm(2), the readout circuit consumes 360 μW, the input referred noise for bipolar EEG signal acquisition is 0.56 μVRMS between 0.5 and 100 Hz and almost halves if only EEG signal is acquired.

  12. Au/Zn Contacts to rho-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.; Korenyi-Both, Andras L.

    1994-01-01

    The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at. percent, the contact resistivity rho(sub c) was found to be independent of the Zn content. For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of rho(sub c) is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

  13. Surface layer structure and average contact temperature of copper-containing materials under dry sliding with high electric current density

    NASA Astrophysics Data System (ADS)

    Fadin, V. V.; Aleutdinova, M. I.; Rubtsov, V. Ye.; Aleutdinov, K. A.

    2016-11-01

    Dry sliding of copper and powder composites of Cu-Fe and Cu-Fe-graphite compositions against 1045 steel under electric current of contact density higher than 250 A/cm2 has been studied, which demonstrated the change in surface layer structure and formation of tribolayer consisting of iron, copper and FeO oxide. Signs of quasi-viscous flow of worn surface were observed. It was noted that the thin contact layer containing about 40 at % of oxygen and 40% of Fe was the main factor decreasing the adhesion interaction. It was affirmed that the introduction of graphite into the primary structure of the composite leads to rather low content of FeO oxide and to the increased tendency of surface layer to catastrophic deterioration under sliding with contact current density of about 300 A/cm2. The temperature of contact did not exceed 400°C.

  14. Electrostatic Radio Frequency (RF) Microelectromechanical Systems (MEMS) Switches With Metal Alloy Electric Contacts

    DTIC Science & Technology

    2004-09-01

    III. Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.1 Micro-Switch Physical Description . . . . . . . . . . . 17 3.2 MEMS...Contact Force Equations . . . . . . . . . . . 41 3.8 Macro-Switch Contact Resistance . . . . . . . . . . . . 46 3.9 Electron Transport Theory and...presentation of pertinent theory . Chapter four summarizes the methodology used to select alloy contact materials. Chapter five presents an analysis of micro

  15. A simulation study on the electrical structure of interdigitated back-contact silicon solar cells

    NASA Astrophysics Data System (ADS)

    Kang, Min Gu; Song, Hee-eun; Kim, Soo Min; Kim, Donghwan

    2015-05-01

    In this paper, a simulation for interdigitated back-contact (IBC) silicon solar cells was performed by using Silvaco TCAD ATLAS to investigate the cell's electrical properties. The impacts of various parameters, including the depth of the front surface field(FSF), the FSF peak doping concentration, the depths of the emitter and the back surface field(BSF), the peak doping concentrations of the emitter and BSF, the base doping, and the bulk lifetime on the output characteristics like the light current-voltage curves and the internal quantum efficiency of the IBC solar cell, were investigated. The light absorption was determined by adjusting the antireflection coating and the Al thickness. The FSF must be thin and have a low doping concentration for high-efficiency IBC cells. If the conversion efficiency is to be improved, a thick emitter and a high doping concentration are needed. Because of the low resistivity of the Si substrate, the series resistance was reduced, but recombination was increased. With a high-resistivity Si substrate, the opposite trends were observed. By counter-balancing the series resistance and the recombination, we determined by simulation that the optimized resistivity for the IBC cells was 1 Ω·cm. Because all metal electrodes in the IBC cells are located on the back side, a higher minority carrier lifetime showed a higher efficiency. After the various parameters had been optimized, texturing and surface recombination were added into the simulation. The simulated IBC cells showed a short-circuit current density of 42.89 mA/cm2, an open-circuit voltage of 714.8 mV, a fill factor of 84.04%, and a conversion efficiency of 25.77%.

  16. Non-Contact Thrust Stand Calibration Method for Repetitively-Pulsed Electric Thrusters

    NASA Technical Reports Server (NTRS)

    Wong, Andrea R.; Toftul, Alexandra; Polzin, Kurt A.; Pearson, J. Boise

    2011-01-01

    A thrust stand calibration technique for use in testing repetitively-pulsed electric thrusters for in-space propulsion has been developed and tested using a modified hanging pendulum thrust stand. In the implementation of this technique, current pulses are applied to a solenoidal coil to produce a pulsed magnetic field that acts against the magnetic field produced by a permanent magnet mounted to the thrust stand pendulum arm. The force on the magnet is applied in this non-contact manner, with the entire pulsed force transferred to the pendulum arm through a piezoelectric force transducer to provide a time-accurate force measurement. Modeling of the pendulum arm dynamics reveals that after an initial transient in thrust stand motion the quasisteady average deflection of the thrust stand arm away from the unforced or zero position can be related to the average applied force through a simple linear Hooke s law relationship. Modeling demonstrates that this technique is universally applicable except when the pulsing period is increased to the point where it approaches the period of natural thrust stand motion. Calibration data were obtained using a modified hanging pendulum thrust stand previously used for steady-state thrust measurements. Data were obtained for varying impulse bit at constant pulse frequency and for varying pulse frequency. The two data sets exhibit excellent quantitative agreement with each other as the constant relating average deflection and average thrust match within the errors on the linear regression curve fit of the data. Quantitatively, the error on the calibration coefficient is roughly 1% of the coefficient value.

  17. Causal Analysis of the Inadvertent Contact with an Uncontrolled Electrical Hazardous Energy Source (120 Volts AC)

    SciTech Connect

    David E. James; Dennis E. Raunig; Sean S. Cunningham

    2014-10-01

    On September 25, 2013, a Health Physics Technician (HPT) was performing preparations to support a pneumatic transfer from the HFEF Decon Cell to the Room 130 Glovebox in HFEF, per HFEF OI 3165 section 3.5, Field Preparations. This activity involves an HPT setting up and climbing a portable ladder to remove the 14-C meter probe from above ball valve HBV-7. The HPT source checks the meter and probe and then replaces the probe above HBV-7, which is located above Hood ID# 130 HP. At approximately 13:20, while reaching past the HBV-7 valve position indicator switches in an attempt to place the 14-C meter probe in the desired location, the HPT’s left forearm came in contact with one of the three sets of exposed terminals on the valve position indication switches for HBV 7. This resulted in the HPT receiving an electrical shock from a 120 Volt AC source. Upon moving the arm, following the electrical shock, the HPT noticed two exposed electrical connections on a switch. The HPT then notified the HFEF HPT Supervisor, who in turn notified the MFC Radiological Controls Manager and HFEF Operations Manager of the situation. Work was stopped in the area and the hazard was roped off and posted to prevent access to the hazard. The HPT was escorted by the HPT Supervisor to the MFC Dispensary and then preceded to CFA medical for further evaluation. The individual was evaluated and released without any medical restrictions. Causal Factor (Root Cause) A3B3C01/A5B2C08: - Knowledge based error/Attention was given to wrong issues - Written Communication content LTA, Incomplete/situation not covered The Causal Factor (root cause) was attention being given to the wrong issues during the creation, reviews, verifications, and actual performance of HFEF OI-3165, which covers the need to perform the weekly source check and ensure placement of the probe prior to performing a “rabbit” transfer. This resulted in the hazard not being identified and mitigated in the procedure. Work activities

  18. Method for manufacturing electrical contacts for a thin-film semiconductor device

    DOEpatents

    Carlson, David E.; Dickson, Charles R.; D'Aiello, Robert V.

    1988-11-08

    A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

  19. Characterization of plasmonic hole arrays as transparent electrical contacts for organic photovoltaics using high-brightness Fourier transform methods

    PubMed Central

    Camino, Fernando E.; Nam, Chang-Yong; Pang, Yutong T.; Hoy, Jessica; Eisaman, Matthew D.; Black, Charles T.; Sfeir, Matthew Y.

    2014-01-01

    We present a methodology for probing light-matter interactions in prototype photovoltaic devices consisting of an organic semiconductor active layer with a semitransparent metal electrical contact exhibiting surface plasmon-based enhanced optical transmission. We achieve high-spectral irradiance in a spot size of less than 100 μm using a high-brightness laser-driven light source and appropriate coupling optics. Spatially resolved Fourier transform photocurrent spectroscopy in the visible and near-infrared spectral regions allows us to measure external quantum efficiency with high sensitivity in small-area devices (<1 mm2). This allows for rapid fabrication of variable-pitch sub-wavelength hole arrays in metal films for use as transparent electrical contacts, and evaluation of the evanescent and propagating mode coupling to resonances in the active layer. PMID:25705085

  20. Characterization of plasmonic hole arrays as transparent electrical contacts for organic photovoltaics using high-brightness Fourier transform methods.

    PubMed

    Camino, Fernando E; Nam, Chang-Yong; Pang, Yutong T; Hoy, Jessica; Eisaman, Matthew D; Black, Charles T; Sfeir, Matthew Y

    2014-12-15

    We present a methodology for probing light-matter interactions in prototype photovoltaic devices consisting of an organic semiconductor active layer with a semitransparent metal electrical contact exhibiting surface plasmon-based enhanced optical transmission. We achieve high-spectral irradiance in a spot size of less than 100 μm using a high-brightness laser-driven light source and appropriate coupling optics. Spatially resolved Fourier transform photocurrent spectroscopy in the visible and near-infrared spectral regions allows us to measure external quantum efficiency with high sensitivity in small-area devices (<1 mm(2)). This allows for rapid fabrication of variable-pitch sub-wavelength hole arrays in metal films for use as transparent electrical contacts, and evaluation of the evanescent and propagating mode coupling to resonances in the active layer.

  1. Characterization of plasmonic hole arrays as transparent electrical contacts for organic photovoltaics using high-brightness Fourier transform methods

    DOE PAGES

    Camino, Fernando E.; Nam, Chang-Yong; Pang, Yutong T.; ...

    2014-05-15

    Here we present a methodology for probing light-matter interactions in prototype photovoltaic devices consisting of an organic semiconductor active layer with a semitransparent metal electrical contact exhibiting surface plasmon-based enhanced optical transmission. We achieve high-spectral irradiance in a spot size of less than 100 μm using a high-brightness laser-driven light source and appropriate coupling optics. Spatially resolved Fourier transform photocurrent spectroscopy in the visible and near-infrared spectral regions allows us to measure external quantum efficiency with high sensitivity in small-area devices (<1 mm2). Lastly, this allows for rapid fabrication of variable-pitch sub-wavelength hole arrays in metal films for use asmore » transparent electrical contacts, and evaluation of the evanescent and propagating mode coupling to resonances in the active layer.« less

  2. Characterization of plasmonic hole arrays as transparent electrical contacts for organic photovoltaics using high-brightness Fourier transform methods

    SciTech Connect

    Camino, Fernando E.; Nam, Chang-Yong; Pang, Yutong T.; Hoy, Jessica; Eisaman, Matthew D.; Black, Charles T.; Sfeir, Matthew Y.

    2014-05-15

    Here we present a methodology for probing light-matter interactions in prototype photovoltaic devices consisting of an organic semiconductor active layer with a semitransparent metal electrical contact exhibiting surface plasmon-based enhanced optical transmission. We achieve high-spectral irradiance in a spot size of less than 100 μm using a high-brightness laser-driven light source and appropriate coupling optics. Spatially resolved Fourier transform photocurrent spectroscopy in the visible and near-infrared spectral regions allows us to measure external quantum efficiency with high sensitivity in small-area devices (<1 mm2). Lastly, this allows for rapid fabrication of variable-pitch sub-wavelength hole arrays in metal films for use as transparent electrical contacts, and evaluation of the evanescent and propagating mode coupling to resonances in the active layer.

  3. Fabrication of a Nanoscale Electrical Contact on a Bismuth Nanowire Encapsulated in a Quartz Template by Using FIB-SEM

    NASA Astrophysics Data System (ADS)

    Murata, Masayuki; Yamamoto, Atsushi; Hasegawa, Yasuhiro; Komine, Takashi

    2017-05-01

    A method to fabricate an electrode on a 110-nm-diameter Bi nanowire, encapsulated in a quartz template, was established using a dual beam instrument equipped with a focused ion beam and a scanning electron microscope. A fabrication method has already been successfully developed to obtain suitable Ohmic contact on both ends of Bi nanowires (several hundred nanometers in diameter) by first polishing the ends of the nanowires, and then depositing titanium/copper thin-films via an ion-plating method. However, with this method, it was difficult to obtain suitable electrodes on Bi nanowires with diameters less than 300 nm. Therefore, in order to understand why it was not possible to establish an electrical contact in small-diameter Bi nanowires, the vertical section of the fabricated electrode and the end of a 110-nm-diameter Bi nanowire were observed using a focused ion beam scanning electron microscope. A vacant area was observed between the end of the nanowire and the titanium thin-film, indicating a possible cause for the electrical contact failure. This implies that the quartz-encapsulated Bi nanowire is selectively removed when it undergoes polishing due to the great difference in hardness between Bi and quartz. A local electrode, which would connect the exposed area of the Bi nanowire and the metal thin-films on the surface of the quartz template, was fabricated by tungsten deposition using an electron beam. After fabrication of the opposite-end electrode by the same method, an electrical connection was successfully confirmed by measuring the voltage between both ends of the metal thin-films with a circuit tester. Ohmic contact was confirmed by measuring the current-voltage characteristics between the fabricated electrodes. As a result, the electrical resistivity and Seebeck coefficient were successfully measured at 300 K.

  4. Fabrication of a Nanoscale Electrical Contact on a Bismuth Nanowire Encapsulated in a Quartz Template by Using FIB-SEM

    NASA Astrophysics Data System (ADS)

    Murata, Masayuki; Yamamoto, Atsushi; Hasegawa, Yasuhiro; Komine, Takashi

    2016-09-01

    A method to fabricate an electrode on a 110-nm-diameter Bi nanowire, encapsulated in a quartz template, was established using a dual beam instrument equipped with a focused ion beam and a scanning electron microscope. A fabrication method has already been successfully developed to obtain suitable Ohmic contact on both ends of Bi nanowires (several hundred nanometers in diameter) by first polishing the ends of the nanowires, and then depositing titanium/copper thin-films via an ion-plating method. However, with this method, it was difficult to obtain suitable electrodes on Bi nanowires with diameters less than 300 nm. Therefore, in order to understand why it was not possible to establish an electrical contact in small-diameter Bi nanowires, the vertical section of the fabricated electrode and the end of a 110-nm-diameter Bi nanowire were observed using a focused ion beam scanning electron microscope. A vacant area was observed between the end of the nanowire and the titanium thin-film, indicating a possible cause for the electrical contact failure. This implies that the quartz-encapsulated Bi nanowire is selectively removed when it undergoes polishing due to the great difference in hardness between Bi and quartz. A local electrode, which would connect the exposed area of the Bi nanowire and the metal thin-films on the surface of the quartz template, was fabricated by tungsten deposition using an electron beam. After fabrication of the opposite-end electrode by the same method, an electrical connection was successfully confirmed by measuring the voltage between both ends of the metal thin-films with a circuit tester. Ohmic contact was confirmed by measuring the current-voltage characteristics between the fabricated electrodes. As a result, the electrical resistivity and Seebeck coefficient were successfully measured at 300 K.

  5. Estimation of contact force and amount of hair between skin and bone-conducted sound transducer using electrical impedance

    NASA Astrophysics Data System (ADS)

    Ogiso, Satoki; Mizutani, Koichi; Zempo, Keiichi; Wakatsuki, Naoto; Maeda, Yuka

    2017-07-01

    Noninvasive bone-conducted hearing aids require the consistent fitting of transducers for consistent hearing. In this paper, a method of estimating the contact force and amount of hair between a person’s skin and a bone-conducted sound transducer using electrical impedance is proposed. Experiments are conducted with a human surface model consisting of hair, skin, and bone. The estimator is implemented with a three-layered neural network. Ten measurements for 70 conditions are conducted by changing the contact force from 0 to 5 N and the amount of hair from 0 to 169.6 mm3. With the trained estimator, it is possible to estimate contact force and the intermediate material thickness with mean errors of 0.025 N and 0.424 mm3. This result supports the feasibility of the proposed method and contributes to the reproducible placement of the bone-conducted sound transducer.

  6. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  7. Rotary electrical contact device and method for providing current to and/or from a rotating member

    DOEpatents

    Koplow, Jeffrey P

    2013-11-19

    Examples of rotary electrical connectors include a first pair and a second pair of opposing sheaves coupled together by intersecting first shaft connecting the first pair of opposing sheaves and a second shaft connecting the second pair of opposing sheaves, and at least partially electrically conductive belt disposed about respective perimeters of the first pair and second pair of opposing sheaves and adapted to remain in contact with at least a portion of the respective perimeters of the sheaves during motion of said sheaves. In example devices, one of the plurality of sheaves may remain stationary during operation of the device while the remaining sheaves rotate and/or orbit around a center axis of the stationary sheave, the device being configured to couple current between a stationary power source and a rotating member through the electrically conductive belt.

  8. The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT

    NASA Astrophysics Data System (ADS)

    Kim, Miryeon; Sun, Wookyung; Kang, Jongseuk; Shin, Hyungsoon

    2017-08-01

    The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified.

  9. A novel synthesis method for large-area MoS2 film with improved electrical contact

    NASA Astrophysics Data System (ADS)

    Song, Xiongfei; Zan, Wu; Xu, Hu; Ding, Shijin; Zhou, Peng; Bao, Wenzhong; Zhang, David Wei

    2017-06-01

    Two-dimensional layered materials (2DLMs) are radically different from conventional bulk semiconductors, and major challenges in achieving practical 2DLM devices with good performance lie in the areas of improving the electrical contacts that connect 2DLMS with electrodes rather than in improving the quality of the channel material itself. To meet this challenge, we have devised a promising large-scale synthesis method for few-layer MoS2 film integrated with unique fabrication process that provides good contact. A thin layer of Mo was first deposited using sputtering evaporation and defined by a shadow mask, instead of immediate sulfurization in a chemical vapor deposition (CVD) furnace. Au contact electrodes were then deposited on Mo, followed by further sulfurization, which readily provides source-drain electrodes for synthesized MoS2. Top-gated transistors based on such MoS2 film show improved device performance compared to transistors fabricated using the traditional method. The transfer line method was further applied to verify that the proposed method could effectively decrease the contact resistance by more than 10 times, which can be attributed to the incomplete sulfurization of Mo atoms beneath the Au electrodes. It is envisioned that the proposed method could eventually be used to provide uniform and low contact resistance for CVD-grown 2DLM devices.

  10. PROPELLANTS FOR ELECTRICAL PROPULSION ENGINES OF THE CONTACT OR BOMBARDMENT ION TYPE

    DTIC Science & Technology

    ALKALI METALS, *ANTHRACENES, *COLLOIDS, *ELECTRIC PROPULSION, * FERROCENES , *ION BEAMS, *IONIZATION, *MOLECULES, *PHENANTHRENES, *PLASMA JETS... PROPELLANTS , ACCELERATION, DECOMPOSITION, ELECTRON IRRADIATION, ELECTROSTATIC ACCELERATORS, IONIZATION POTENTIALS, LABORATORY EQUIPMENT, LITHIUM

  11. Influence of surface roughness on the tribo-electric process for a sliding contact between polymeric plate materials

    NASA Astrophysics Data System (ADS)

    Neagoe, M. B.; Prawatya, Y. E.; Zeghloul, T.; Dascalescu, L.

    2017-02-01

    Polymers are used in many industrial applications due to their good mechanical and thermal properties. Studies have shown that electrical insulators, such as the polymers, are generating electrostatic charge by frictional contact. This tribo-charging effect influences de sliding conditions, and the level of charge depends of several factors. The aim of this paper is to validate two paradigms: (I) the electrostatic charge increases with contact pressure; (II) the level of charge is influenced by the number of contact points on the surface. The tribocharging experiments were carried out with samples cut from two polymers: Acrylonitrile-Butadiene-Styrene, 5 mm x 15mm x100 mm, roughness: Ra = 0.4 µm and Polyvinyl Chloride, 5 mm x 50 mm x 180 mm, with various roughness values: Ra = 3-12 µm and RSm = 150-350 µm. The modification of asperity density was accompanied by changes in the electric potential measured at the surface of the PVC samples. Thus, its average value V increased from -0.33 to -0.85 kV, and its maximum value Vmax, from -1.56 to -4.83 kV.

  12. Structural changes of electron and ion beam-deposited contacts in annealed carbon-based electrical devices

    NASA Astrophysics Data System (ADS)

    Batra, Nitin M.; Patole, Shashikant P.; Abdelkader, Ahmed; Anjum, Dalaver H.; Deepak, Francis L.; Costa, Pedro M. F. J.

    2015-11-01

    The use of electron and ion beam deposition to make devices containing discrete nanostructures as interconnectors is a well-known nanofabrication process. Classically, one-dimensional materials such as carbon nanotubes (CNTs) have been electrically characterized by resorting to these beam deposition methods. While much attention has been given to the interconnectors, less is known about the contacting electrodes (or leads). In particular, the structure and chemistry of the electrode-interconnector interface is a topic that deserves more attention, as it is critical to understand the device behavior. Here, the structure and chemistry of Pt electrodes, deposited either with electron or ion beams and contacted to a CNT, are analyzed before and after thermally annealing the device in a vacuum. Free-standing Pt nanorods, acting as beam-deposited electrode models, are also characterized pre- and post-annealing. Overall, the as-deposited leads contain a non-negligible amount of amorphous carbon that is consolidated, upon heating, as a partially graphitized outer shell enveloping a Pt core. This observation raises pertinent questions regarding the definition of electrode-nanostructure interfaces in electrical devices, in particular long-standing assumptions of metal-CNT contacts fabricated by direct beam deposition methods.

  13. Non-contact measurement of electrical activity in neurons using magnified image spatial spectrum (MISS) microscopy (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Majeed, Hassaan; Lee, Young J.; Best-Popescu, Catherine; Popescu, Gabriel; Jang, Sung-Soo; Chung, Hee Jung

    2017-02-01

    Traditionally the measurement of electrical activity in neurons has been carried out using microelectrode arrays that require the conducting elements to be in contact with the neuronal network. This method, also referred to as "electrophysiology", while being excellent in terms of temporal resolution is limited in spatial resolution and is invasive. An optical microscopy method for measuring electrical activity is thus highly desired. Common-path quantitative phase imaging (QPI) systems are good candidates for such investigations as they provide high sensitivity (on the order of nanometers) to the plasma membrane fluctuations that can be linked to electrical activity in a neuronal circuit. In this work we measured electrical activity in a culture of rat cortical neurons using MISS microscopy, a high-speed common-path QPI technique having an axial resolution of around 1 nm in optical path-length, which we introduced at PW BIOS 2016. Specifically, we measured the vesicular cycling (endocytosis and exocytosis) occurring at axon terminals of the neurons due to electrical activity caused by adding a high K+ solution to the cell culture. The axon terminals were localized using a micro-fluidic device that separated them from the rest of the culture. Stacks of images of these terminals were acquired at 826 fps both before and after K+ excitation and the temporal standard deviation maps for the two cases were compared to measure the membrane fluctuations. Concurrently, the existence of vesicular cycling was confirmed through fluorescent tagging and imaging of the vesicles at and around the axon terminals.

  14. Structural and electrical characterization of ohmic contacts to graphitized silicon carbide.

    PubMed

    Maneshian, Mohammad H; Lin, Ming-Te; Diercks, David; Shepherd, Nigel D

    2009-12-09

    Titanium was deposited onto silicon carbide (6H-SiC) using the 248 nm line of an excimer laser in a vacuum of 10(-6) Torr, and ohmic contacts were formed by annealing the structure at approximately 1000 degrees C. Further anneals between 1350 and 1430 degrees C did not degrade the formed contacts, and Raman analysis confirmed that sublimation of silicon from the near surface layers of the silicon carbide between the contact pads resulted in graphene formation after 5 min, 1428 degrees C anneals. The graphene formation was accompanied by a significant enhancement of ohmic behavior, and, it was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy showed that the interface between the metal and silicon carbide remained sharp and free of macroscopic defects even after 30 min, 1430 degrees C anneals. The interface was determined to be carbon rich by elemental analysis, which indicates metal carbide formation. The potential of this approach for achieving ohmic contacts and graphene formation on silicon carbide substrates is discussed. A mechanism for the sequential formation of ohmic contacts then graphene is proposed.

  15. Influence of typical faults over the dynamic behavior of pantograph-catenary contact force in electric rail transport

    NASA Astrophysics Data System (ADS)

    Rusu-Anghel, S.; Ene, A.

    2017-05-01

    The quality of electric energy capture and also the equipment operational safety depend essentially of the technical state of the contact line (CL). The present method for determining the technical state of CL based on advance programming is no longer efficient, due to the faults which can occur into the not programmed areas. Therefore, they cannot be remediated. It is expected another management method for the repairing and maintenance of CL based on its real state which must be very well known. In this paper a new method for determining the faults in CL is described. It is based on the analysis of the variation of pantograph-CL contact force in dynamical regime. Using mathematical modelling and also experimental tests, it was established that each type of fault is able to generate ‘signatures’ into the contact force diagram. The identification of these signatures can be accomplished by an informatics system which will provide the fault location, its type and also in the future, the probable evolution of the CL technical state. The measuring of the contact force is realized in optical manner using a railway inspection trolley which has appropriate equipment. The analysis of the desired parameters can be accomplished in real time by a data acquisition system, based on dedicated software.

  16. A theoretical study of the electrical contact between metallic and semiconducting phases in monolayer MoS2

    NASA Astrophysics Data System (ADS)

    Paz, Wendel S.; Palacios, J. J.

    2017-03-01

    We present a theoretical study of the electrical contact between the two most common crystallographic phases of MoS2 monolayer crystals: the stable semiconducting 2H phase and the metastable metallic 1T phase. A density functional theory (DFT) study of the electronic structure of interface between the two phases shows a higher Schottky barrier for electrons than for holes for the undoped 2H phase. Charge transfer from the 1T to the 2H phase occurs, but, as expected for a one-dimensional contact, the generated dipole potential decays away from the interface and the naive Schottky-Mott band-alignment picture is recovered away from the interface. The decay length of the dipole potential turns out to be larger for the zigzag interface than for the armchair interface due to the different penetration of the edge states into the bulk. Tight-binding quantum transport calculations aided by the DFT results generically confirm a low contact resistance in the range of ≈200-400 Ωμm, as experimentally reported. Furthermore, the contact resistance is predicted to be smaller at the armchair interface for electron injection and, on the contrary, smaller for hole injection at the zigzag interface.

  17. A study on electrical contact at the PEDOT:PSS electrode/molecule interface in large-area molecular junctions

    NASA Astrophysics Data System (ADS)

    Jeong, Inho; Song, Hyunwook

    2017-08-01

    We have investigated the effect of the PEDOT:PSS electrode/molecule contact on the charge transport characteristics of large-area molecular junctions. We incorporated two different benzenethiolate molecules into the molecular junctions: 4-methylbenzenethiol (MBT) and benzene- 1,4-dithiol (BDT). They have an identical backbone structure but different top end-groups. From statistical analysis, we found that the tunneling transport behavior showed a significant difference between the two prototype conjugated molecules, which was attributed to their distinct electrical contacts at the PEDOT:PSS electrode/molecule interface. We also observed an enhancement of the junction conductance at elevated temperatures, which would be caused by the increased grain size of the conducting PEDOT-rich cores and the removal of residual solvents or water in the junctions.

  18. Characterization of Contact and Bulk Thermal Resistance of Laminations for Electric Machines

    SciTech Connect

    Cousineau, J. Emily; Bennion, Kevin; DeVoto, Doug; Mihalic, Mark; Narumanchi, Sreekant

    2015-06-30

    The ability to remove heat from an electric machine depends on the passive stack thermal resistances within the machine and the convective cooling performance of the selected cooling technology. This report focuses on the passive thermal design, specifically properties of the stator and rotor lamination stacks. Orthotropic thermal conductivity, specific heat, and density are reported. Four materials commonly used in electric machines were tested, including M19 (29 and 26 gauge), HF10, and Arnon 7 materials.

  19. Stability of spin-electric coupling in triangular single-molecule magnets under external contacts

    NASA Astrophysics Data System (ADS)

    Islam, Fhokrul; Nossa, Javier; Canali, Carlo; Pederson, Mark

    2015-03-01

    Triangular single molecule magnets (SMMs) with antiferromagnetic exchange coupling exhibit Kramer degenerate chiral spin-doublets ground states, which can be efficiently coupled by an electric field, even in the absence of spin-orbit interaction. Recent first-principles calculations show that unsupported V3 SMM has giant spin-electric coupling corresponding to dipole moment of about one tenth of the water-molecule dipole moment. The corresponding Rabi time for electric switching between two chiral states can be on the order of one nano-second for reasonable electric fields, which makes these molecules very attractive candidates for storing and manipulating pairs of coupled spin-chiral qbits. However, for device applications of the spin-electric coupling, these frustrated SMMs need to be supported on a surface or between metallic leads. Preserving this effect in an external environment is a challenging problem requiring appropriate functionalization. In this talk we will discuss the stability of the spin-electric coupling in V3 SMM when coupled to gold leads or deposited on a graphene surface.

  20. Determination of electric field threshold for electrofusion of erythrocyte ghosts. Comparison of pulse-first and contact-first protocols.

    PubMed Central

    Wu, Y; Montes, J G; Sjodin, R A

    1992-01-01

    Rabbit erythrocyte ghosts were fused by means of electric pulses to determine the electrofusion thresholds for these membranes. Two protocols were used to investigate fusion events: contact-first, and pulse-first. Electrical capacitance discharge (CD) pulses were used to induce fusion. Plots of fusion yield vs peak field strength yielded curves that intersected the field strength axis at positive values (pseudothresholds) which depended on the protocol and decay half time of the pulses. It was found that plots of pseudothreshold vs reciprocal half time were linear for each protocol; when extrapolated to reciprocal half time = 0 (i.e., t----infinity), these lines intersected the ordinate at values of the field strength considered to be the true electrofusion thresholds. In this fashion, the contact-first protocol gave an electrofusion threshold of 46.5 +/- 11.5 V/mm for hemoglobin-free ghosts (white ghosts) and 40.9 +/- 8.8 V/mm for ghosts with fractional hemoglobin (pink ghosts), while the threshold for the pulse-first protocol applied to pink ghosts was determined to be 93.4 +/- 11.0 V/mm. Although the thresholds depended on the electrofusion protocol, plots of critical field strength vs reciprocal time had the same slopes, i.e., approximately 24 Vs/mm. The results suggest that the fusogenic state induced by an electric pulse in either the contact-first protocol or the pulse-first protocol (long-lived fusogenic state) may in fact share a common mechanism, if the two states are not actually identical. PMID:1504251

  1. Anomalous n-type electrical behaviour of Pd-contacted CNTFET fabricated on small-diameter nanotube

    NASA Astrophysics Data System (ADS)

    Jejurikar, S.; Casterman, D.; Pillai, P. B.; Petrenko, O.; De Souza, M. M.; Tahraoui, A.; Durkan, C.; Milne, W. I.

    2010-05-01

    A Pd-contacted dopant-free CNTFET with small-diameter (0.57 nm) carbon nanotube showing an anomalous n-type electrical characteristic is reported for the first time. This observed behaviour is attributed to a carbon nanotube work function higher than (or close to) palladium as well as a large hole-to-electron effective mass ratio of ~ 2.5 predicted by hybridization in small-diameter nanotubes. A variation of the conduction type with temperature is also observed and is attributed to an increase of the palladium work function and decrease of the CNT work function with increasing temperature.

  2. Anomalous n-type electrical behaviour of Pd-contacted CNTFET fabricated on small-diameter nanotube.

    PubMed

    Jejurikar, S; Casterman, D; Pillai, P B; Petrenko, O; De Souza, M M; Tahraoui, A; Durkan, C; Milne, W I

    2010-05-28

    A Pd-contacted dopant-free CNTFET with small-diameter (0.57 nm) carbon nanotube showing an anomalous n-type electrical characteristic is reported for the first time. This observed behaviour is attributed to a carbon nanotube work function higher than (or close to) palladium as well as a large hole-to-electron effective mass ratio of approximately 2.5 predicted by hybridization in small-diameter nanotubes. A variation of the conduction type with temperature is also observed and is attributed to an increase of the palladium work function and decrease of the CNT work function with increasing temperature.

  3. Quenching characteristics of electrical contacts using YBaCuO bulk superconductor

    NASA Astrophysics Data System (ADS)

    Fukuda, K.; Fujita, H.; Ogawa, K.; Tomita, M.; Murakami, M.; Sakai, N.; Hirabayashi, I.; Sawa, K.

    2008-09-01

    A persistent current switch (PCS) is used for various superconducting applications, such as superconducting magnetic energy storage (SMES) system. The authors have proposed a mechanical switch of Y-Ba-Cu-O (YBCO) bulk as a PCS. In previous study, in order to investigate the contact characteristics of the switch, 50 A current test was performed and the contact resistance between two contacts was measured by four terminal method. As a result, it became clear that polishing and metal depositing on YBCO surface was effective to reduce the residual resistance, and the authors achieved to reduce this resistance to 0.27 μΩ, which was less than our target value of 1 μΩ. At the same time, the greater current test (above 50 A) was performed in order to examine the transition to normal conductive state in the YBCO contacts. As a result, it could be found that the current value when a local quench occurred (local quenching current: LQC) had a strong relationship with the layer thickness of deposited silver on YBCO surface. This paper focused on the relationship between the transition current to the normal conductive state in the YBCO (quenching current) and the layer thickness of deposited silver on YBCO surface. And it was also observed whether the number of current cycles affected the value of quenching current.

  4. Investigation of dielectric substrates on electrical and optical performance of wafer-scale graphene using non-contact methods

    NASA Astrophysics Data System (ADS)

    Wang, Dong; Ning, Jing; Zhang, Jincheng; Guo, Lixin; Hao, Yue

    2017-10-01

    Here we systemically discussed the influence of dielectric substrates on the surface morphology, electrical and optical performance of transferred graphene. The electrical properties were investigated using a microwave-probing technique without metal-graphene contact. We found that a complex mechanism governed the influence of the surface properties of the dielectric substrates, such as morphology, hydrophilicity, crystallinity, and polarization, on the performance of the graphene. We also found that graphene on r-Al2O3 was more effective for graphene-based devices with a high carrier mobility of ˜5000 cm2 V-1 s-1. This provides a new method to choose the most suitable substrate for fabricating graphene-based devices.

  5. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Zhou, Tian-Yu; Liu, Xue-Chao; Huang, Wei; Zhuo, Shi-Yi; Zheng, Yan-Qing; Shi, Er-Wei

    2015-12-01

    A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 °C and the GIXRD results show a distinct phase change from Ta2C to TaC at this temperature. A specific contact resistance of 6.5× 10-5 Ω·cm2 is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 °C. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures. Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Rising-star Program, China (Grant No. 13QA1403800), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High-tech Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

  6. Electrical Signal Path Study and Component Assay for the MAJORANA N-Type Segmented Contact Detector

    SciTech Connect

    Amman, Mark; Bergevin, Marc; Chan, Yuen-Dat; Detwiler, Jason A.; Fujikawa, Brian .; Lesko, Kevin T.; Luke, Paul N.; Prior, Gersende; Poon, Alan W.; Smith, Alan R.; Vetter, Kai; Yaver, Harold; Zimmermann, Sergio

    2009-02-24

    The purpose of the present electrical signal path study is to explore the various issues related to the deployment of highly-segmented low-background Ge detectors for the MAJORANA double-beta decay experiment. A significant challenge is to simultaneously satisfy competing requirements for the mechanical design, electrical readout performance, and radiopurity specifications from the MAJORANA project. Common to all rare search experiments, there is a very stringent limit on the acceptable radioactivity level of all the electronics components involved. Some of the findings are summarized in this report.

  7. Long-lived resonances supported by a contact interaction in crossed magnetic and electric fields

    SciTech Connect

    Krajewska, K. Kaminski, J.Z.; Potvliege, R.M.

    2008-11-15

    The lifetime of the resonance states of an electron interacting with a zero-range potential in the presence of crossed magnetic and electric fields is studied for the case where the electron is confined in the direction of the magnetic field by a parabolic quantum well. It is shown that long-lived electric field-induced resonances exist in this system even when the zero-range potential does not support any field-free bound state. The relationship of these resonances with the Landau states localized near the point interaction is discussed.

  8. Electrical contact characteristics of mechanically mated Y Ba Cu O bulks with deposited metal layer

    NASA Astrophysics Data System (ADS)

    Imaizumi, with deposited metal layer T.; Sawa, K.; Tomita, M.; Murakami, M.; Sakai, N.; Hirabayashi, I.

    2005-10-01

    We have measured contact resistances between two bulk YBCO superconductor blocks with the application to a persistent current switch (PCS) in mind. In order to reduce a contact resistance, we deposited indium and silver on the sample surfaces. The resistance was reduced by increasing the thickness of the deposited metal layers, but it saturated when the thickness reached a certain level. The saturation thickness was much smaller in indium than silver. Such a difference is understandable by considering the hardness of these two metals. The resistance was also reduced by increasing the mechanical load. Overloading however caused the coupling of metal layers, resulting in the peeling off of the deposited layers when the switch was opened.

  9. Contact-Potential and Surface-Charge Effects in Atmospheric-Electrical Instrumentation.

    DTIC Science & Technology

    1983-04-26

    The contact potential, or Volta-potential difference 1 , between two metals was shown by Millikan (1921) to be nearly equal and opposite to the...prevent fingerprints from building up an oil film. All the measurements described below were made in an air-conditioned laboratory at temperatures of 20...be due to a change in that plate alone, it was omitted from the corresponding average. Subsequent to 5/28 a number of plates were dropped from the

  10. Study on the Ohmic Contact, Electrical and Optical Properties of Nanostructured Titanium Dioxide Thin Films

    NASA Astrophysics Data System (ADS)

    Ahmad, M. K.; Rusop, M.

    2009-06-01

    Nanostructured Titanium Dioxide (TiO2) thin film with various sol-gel concentrations has been successfully prepared using sol-gel spin coating method. Nanostructured TiO2 thin films prepared at different sol-gel concentration from 0.1 M to 0.4 M. The IV measurement was measured using direct currents between two contacts were measured using Advantest source meter (R6243). To perform the IV measurement, two kinds of metal contact has been used; Platinum (Pt) and Gold (Au). It showed that both of metal contact shows that 0.2 M of concentration gives the lowest sheet resistance. The sheet resistance and resistivity of the thin film decreased from 0.1 M to 0.2 M and significantly increased at 0.3 M and 0.4 M. Optical transmission spectra were recorded in the wavelength range 200-1000 nm using UV-VIS-NIR Spectrophotometer (VARIAN 5000). The effect of sol concentration on band gap (Eg) values of the TiO2 thin films has been studied. The lowest band gap is 3.35 eV which contribute to 0.2 M of concentration and it is also understand that prepared nanostructured TiO2 thin film is indirect band gap.

  11. Reduction of Ag-Si electrical contact resistance by selective RF heating

    NASA Astrophysics Data System (ADS)

    de Wijs, W.-J. A.; Ljevar, S.; van de Sande, M. J.; de With, G.

    2016-06-01

    Fast and selective inductive heating of pre-sintered silver lines on silicon as present in solar cells using 27 MHz radio-frequency inductive fields is shown. IR measurements of silicon substrates show that above 450 °C the heating rate of the samples increases sharply, indicating that both the silver and the silicon are heated. By moving the substrate with respect to the RF antenna and modulation of the RF field, silicon wafers were heated reproducibly above 450 °C with heating rates in excess of 200 °C s-1. Furthermore, selective heating of lines of pre-sintered silver paste was shown below the 450 °C threshold on silicon substrates. The orientation of the silver tracks relative to the RF antenna appeared to be crucial for homogeneity of heating. Transmission line measurements show a clear effect on contact formation between the silver lines and the silicon substrate. To lower the contact resistance sufficiently for industrial feasibility, a high temperature difference between the Si substrate and the Ag tracks is required. The present RF heating process does not match the time scale needed for contact formation between silver and silicon sufficiently, but the significantly improved process control achieved shows promise for applications requiring fast heating and cooling rates.

  12. Electrical resistance determination of actual contact area of cold welded metal joints

    NASA Technical Reports Server (NTRS)

    Hordon, M. J.

    1970-01-01

    Method measures the area of the bonded zone of a compression weld by observing the electrical resistance of the weld zone while the load changes from full compression until the joint ruptures under tension. The ratio of bonding force to maximum tensile load varies considerably.

  13. Electrical characteristics of N-polar (000\\bar{1}) p-type GaN Schottky contacts

    NASA Astrophysics Data System (ADS)

    Aoki, Toshichika; Tanikawa, Tomoyuki; Katayama, Ryuji; Matsuoka, Takashi; Shiojima, Kenji

    2016-04-01

    The electrical characteristics of Ni/N-polar p-GaN Schottky contacts were investigated in comparison with those of Ga-polar contacts. The Schottky barrier heights were obtained to be 0.91, 1.24, and 1.30 eV from the current-voltage (I-V), capacitance-voltage, and photoresponse results, respectively. These values of the N-polar samples were more than 1 eV lower than those of the Ga-polar samples. Hence, it was suggested that a Ni contact on N-polar p-GaN has a possible advantage in forming better ohmic electrodes. In addition, we also found that no memory effect, which was caused by the charge and discharge of surface defects [Ga vacancies (VGa)], was observed in the I-V characteristics, and no single peak of VGa was observed in the high-temperature isothermal capacitance transient spectroscopy spectrum. Therefore, it is suggested that the topmost N atomic layer can suppress the Ga out-diffusion.

  14. Effects of Surface Roughness and Aging on the Electrical Contact Resistance and Residual Stress in Gold-Nickel-Copper Connector Materials

    DTIC Science & Technology

    2014-12-01

    connector interface, such as from vibrations or sliding. Wear failure can take place by one or more of a range of mechanisms including adhesive wear...Professor of Engineering Science and Mechanics Thesis Advisor Barbara A. Shaw Professor of Engineering Science and Mechanics Todd A. Palmer...Background 4 2.1 Electrical Connectors 4 2.1.1 Failure Mechanisms in Electrical Contacts 5 2.1.2 Materials in Electrical Connectors 8 2.2 Coating

  15. Depleted-heterojunction colloidal quantum dot photovoltaics employing low-cost electrical contacts

    NASA Astrophysics Data System (ADS)

    Debnath, Ratan; Greiner, Mark T.; Kramer, Illan J.; Fischer, Armin; Tang, Jiang; Barkhouse, D. Aaron R.; Wang, Xihua; Levina, Larissa; Lu, Zheng-Hong; Sargent, Edward H.

    2010-07-01

    With an aim to reduce the cost of depleted-heterojunction colloidal quantum dot solar cells, we describe herein a strategy that replaces costly Au with a low-cost Ni-based Ohmic contact. The resultant devices achieve 3.5% Air Mass 1.5 power conversion efficiency. Only by incorporating a 1.2-nm-thick LiF layer between the PbS quantum dot film and Ni, we were able to prevent undesired reactions and degradation at the metal-semiconductor interface.

  16. Control of GaAs Microwave Schottky Diode Electrical Characteristics by Contact Geometry: The Gap Diode.

    DTIC Science & Technology

    1982-05-01

    profile. After construction, the system was dismantled, the quartz and Pyrex parts cleaned thoroughly in aqua regia and rinsed in deionized water...field is reversed . In practice, the semiconductor can be made degenerate which results in an ohmic contact. 1.3.2.1 Alloying [10,11,12] A simple way to...relate the forward carrier flux Jf and reverse carrier flux Jr by if = Jr exp (a") (2.3) where ir =A* T2 exp ( ) (2.4) * Here, A is the Richardson

  17. CORRIGENDUM: The formation and characterization of electrical contacts (Schottky and Ohmic) on gallium nitride nanowires

    NASA Astrophysics Data System (ADS)

    Hwang, Chanoh; Hyung, Jung-Hwan; Lee, Seung-Yong; Jang, Chan-Oh; Kim, Tae-Hong; Choi, Pyung; Lee, Sang-Kwon

    2008-08-01

    The authors acknowledge that the content of this paper is closely related to that of a previous publication, by two of the same authors, which was not cited in their later publication. They agree that their statement '... little work has been reported on nanoscale Ohmic and Schottky contacts to 1D semiconductor nanowires [12, 14]' should also have included the following citation to the work that they had themselves reported: Seung-Yong Lee and Sang-Kwon Lee Current transport mechanism in a metal-GaN nanowire Schottky diode 2008 Nanotechnology 18 495701

  18. The enhancement of neuronal cells wound healing with non-contact electric field stimulation by graphene electrodes

    NASA Astrophysics Data System (ADS)

    Lee, Sohee; Heo, Chaejeong; Lee, Si Young; Lee, Young Hee; Suh, Minah

    2013-05-01

    Electrical stimulation affects cellular behaviors including division, migration and wound healing [1-3]. Cellular injury often occurs due to the imbalance of the endogenous electric field [3]. In order to recover from the injury, wound healing process requires various cellular changes such as regeneration, migration, and the enhancement of cytoskeletal proteins and growth factors. In previous reports, a weak non-contact electric field stimulation (nEFS) accelerates the cell migration as well as cell-to-cell coupling between neuronal cell junction which are accompanied by increasing of cytoskeletal proteins [4, 5]. In this paper, we further investigated the wound healing effect of the nEFS in the neuronal cells (SHSY5Y cells) with live cell optical imaging. Cells were cultured over the optically transparent graphenen EF stimulator. Cellular behavioral changes upon nEFS were recorded with live optical imaging during stimulation of 120 minutes. The ability of wound healing was significantly enhanced with the nEFS. In particular, nEFS significantly shorten the duration of wound healing process. Moreover, after treating cells with cytochalasin D, a block polymerization of the actin filaments, the nEFS significantly enhanced wound healing process of cytochalasin D treated neural cells as compared to the control neural cells. This study suggests that nEFS may provide an effective way to control neural cells repairing process from cellular injury. Further mechanism study about the effect of nEFS on the wound healing may shed new light on cellular behavior.

  19. Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

    PubMed Central

    Fisichella, Gabriele; Piazza, Aurora; Di Franco, Salvatore; Greco, Giuseppe; Agnello, Simonpietro; Roccaforte, Fabrizio

    2017-01-01

    Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, R C, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the main limiting factors for suitable device performance. Furthermore, to gain a deeper understanding of MoS2 FETs under practical operating conditions, it is necessary to investigate the temperature dependence of the main electrical parameters, such as the field effect mobility (μ) and the threshold voltage (V th). This paper reports a detailed electrical characterization of back-gated multilayer MoS2 transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. From the analysis of the transfer characteristics (I D−V G) in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV) associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel) was also determined and it was found to increase with T as R C proportional to T 3.1. The contribution of R C to the extraction of μ and V th was evaluated, showing a more than 10% underestimation of μ when the effect of R C is neglected, whereas the effect on V th is less significant. The temperature dependence of μ and V th was also investigated. A decrease of μ proportional to 1/T α with α = 1.4 ± 0.3 was found, indicating scattering by optical phonons as the main limiting mechanism for mobility above room temperature. The value of V th showed a large negative shift (about 6 V) increasing the temperature from 298 to 373 K, which was explained in terms of electron

  20. The effect of electric field intensification at interparticle contacts in microwave sintering

    NASA Astrophysics Data System (ADS)

    Qiao, Xiuchen; Xie, Xiaoying

    2016-09-01

    The nature of microwave sintering cannot be explained in the past and has been generally called microwave effect. Here we show that the E-field intensification is the reason of microwave fast sintering of solid state inorganic compounds. The intensification degree varied with dielectric constant of compound, distance between two particles, angle between the direction of E-field and the normal to the surface at the adjacent point of two spheres. Ultra-high temperature caused by E-field intensification leads to fusing of solid materials at contact zone and enhances the mass transportation. The key to develop a microwave energy-saved sintering method is to control the distance between particles and uniformity of particles instead of the particle size.

  1. Effect of Ion Sputtering on Interface Chemistry and Electrical Properties of an Gaas (100) Schottky Contacts

    NASA Technical Reports Server (NTRS)

    Wang, Y. X.; Holloway, P. H.

    1984-01-01

    Auger and electron photoelectron spectroscopy were used to measure the extent of As depletion during 1 keV to 5 keV argon sputtering of GaAs surfaces. This depletion was correlated with a general decrease in the barrier height of the rectifying Au contact deposited in situ. However, nondestructive angle resolved XPS measurements showed As was depleted at the outer surface more by 1 keV than 3 keV argon. These effects are explained based on a combined work effective work function model and creation of a donor like surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.

  2. The effect of electric field intensification at interparticle contacts in microwave sintering

    PubMed Central

    Qiao, Xiuchen; Xie, Xiaoying

    2016-01-01

    The nature of microwave sintering cannot be explained in the past and has been generally called microwave effect. Here we show that the E-field intensification is the reason of microwave fast sintering of solid state inorganic compounds. The intensification degree varied with dielectric constant of compound, distance between two particles, angle between the direction of E-field and the normal to the surface at the adjacent point of two spheres. Ultra-high temperature caused by E-field intensification leads to fusing of solid materials at contact zone and enhances the mass transportation. The key to develop a microwave energy-saved sintering method is to control the distance between particles and uniformity of particles instead of the particle size. PMID:27586521

  3. Which nanowire couples better electrically to a metal contact: Armchair or zigzag nanotube?

    NASA Technical Reports Server (NTRS)

    Anantram, M. P.; Biegel, Bryan (Technical Monitor)

    2001-01-01

    The fundamental question of how chirality affects tile electronic coupling of a nanotube to metal contacts is important for tile application of nanotubes as nanowires. We show that metallic-zigzag nanotubes are superior to armchair nanotubes as nanowires, by modeling the metal-nanotube interface. More specifically, we show that as a function of coupling strength, the total electron transmission of armchair nanotubes increases and tends to be pinned close to unity for a metal with Fermi wave vector close to that of gold. In contrast, the transmission probability of zigzag nanotubes increases to the maximum possible value of two. The origin of these effects lies in the details of the wave function, which is explained.

  4. Improvement of the electrical contact resistance at rough interfaces using two dimensional materials

    SciTech Connect

    Hu, Jianchen; Pan, Chengbin; Lanza, Mario; Li, Heng; Shen, Panpan; Sun, Hui; Duan, Huiling

    2015-12-07

    Reducing the electronic contact resistance at the interfaces of nanostructured materials is a major goal for many kinds of planar and three dimensional devices. In this work, we develop a method to enhance the electronic transport at rough interfaces by inserting a two dimensional flexible and conductive graphene sheet. We observe that an ultra-thin graphene layer with a thickness of 0.35 nm can remarkably reduce the roughness of a sample in a factor of 40%, avoiding the use of thick coatings, leading to a more homogeneous current flow, and extraordinarily increasing the total current compared to the graphene-free counterpart. Due to its simplicity and performance enhancement, this methodology can be of interest to many interface and device designers.

  5. Electrically detected nuclear magnetic resonance in GaAs/AlGaAs-based quantum point contacts

    NASA Astrophysics Data System (ADS)

    Keane, Zachary; Godfrey, Matthew; Burke, Adam; Chen, Jason; Fricke, Sebastian; Klochan, Oleh; Micolich, Adam; Beere, Harvey; Ritchie, Dave; Trunov, Kirill; Reuter, Dirk; Wieck, Andreas; Hamilton, Alex

    2011-03-01

    Nuclear magnetic resonance (NMR) is a well-known technique with widespread applications in physics, chemistry and medicine. Conventional NMR studies use inductive coils to detect the magnetic field produced by precessing nuclear spins; this approach requires on the order of 1012 spins for detection. Recently, resistive detection of NMR through the hyperfine interaction has been demonstrated with electrons in mesoscopic 2- and 1-dimensional devices based on high-quality GaAs/AlGaAs heterostructures. These studies are typically sensitive to 108 spins, enabling NMR on much smaller sample volumes. Holes are predicted to have much weaker nuclear spin coupling than electrons, which could be relevant to the emerging fields of spintronics and quantum information processing. We present a preliminary comparison between the magnitude of the NMR signal in electron and hole quantum point contacts.

  6. Further considerations on the preparation of small electrical contacts by spot welding

    NASA Astrophysics Data System (ADS)

    Walker, I. R.; Moss, C. J.

    2000-05-01

    A recent publication by the authors describes a spot welder which can be used to join small wires to samples of metallic materials. The article also discusses the selection of contact wires, the preparation of samples prior to welding, and other details of the welding method. In the present work, we give a much improved version of the power supply circuit, and offer additional information on the technique that was not discussed previously. A "universal" method of electropolishing is also described which may be used to remove oxides and other surface contaminants from samples prior to spot welding. This technique can be applied to a variety of materials, including rare earth elements and compounds, which are generally difficult to polish or etch using other chemical or electrochemical means.

  7. Methods for forming small-volume electrical contacts and material manipulations with fluid microchannels

    DOEpatents

    Jacobson, Stephen C [Knoxville, TN; Ramsey, J Michael [Knoxville, TN; Culbertson, Christopher T [Oak Ridge, TN; Whitten, William B [Lancing, TN; Foote, Robert S [Oak Ridge, TN

    2011-12-27

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  8. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C [Knoxville, TN; Ramsey, J Michael [Knoxville, TN; Culbertson, Christopher T [Oak Ridge, TN; Whitten, William B [Lancing, TN; Foote, Robert S [Oak Ridge, TN

    2011-03-22

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  9. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C [Knoxville, TN; Ramsey, J Michael [Knoxville, TN; Culbertson, Christopher T [Oak Ridge, TN; Whitten, William B [Lancing, TN; Foote, Robert S [Oak Ridge, TN

    2011-04-26

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microehannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  10. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C.; Ramsey, J. Michael

    2007-11-20

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  11. Methods for forming small-volume electrical contacts and material manipulations with fluidic microchannels

    DOEpatents

    Jacobson, Stephen C.; Ramsey, J. Michael; Culbertson, Christopher T.; Whitten, William B.; Foote, Robert S.

    2004-02-03

    A microfabricated device employing a bridging membrane and methods for electrokinetic transport of a liquid phase biological or chemical material using the same are described. The bridging membrane is deployed in or adjacent to a microchannel and permits either ionic current flow or the transport of gas species, while inhibiting the bulk flow of material. The use of bridging membranes in accordance with this invention is applicable to a variety of processes, including electrokinetically induced pressure flow in a region of a microchannel that is not influenced by an electric field, sample concentration enhancement and injection, as well as improving the analysis of materials where it is desired to eliminate electrophoretic bias. Other applications of the bridging membranes according to this invention include the separation of species from a sample material, valving of fluids in a microchannel network, mixing of different materials in a microchannel, and the pumping of fluids.

  12. Monitoring the Intensity of Ice Formation on Overhead Electric Power Lines and Contact Networks

    SciTech Connect

    Titov, D. E.; Ugarov, G. G.; Soshinov, A. G.

    2015-05-15

    The conditions for ice to form on a conductor are explained. A hypothesis on the existence of a functional relation between the rate of growth of a mass deposited on a non-live conductor, the dew and desublimation points, and the temperature of the wire surface when there is no wind is suggested and proved. Equations for determining the density, maximum possible mass of the coating and the intensity with which they are formed are proposed, which take into account the temperature of the conductor, the temperature and humidity of the air, the direction and velocity of the wind and the electric field strength of the conductor. The equations are the basis of a proposed thermodynamic method of monitoring the intensity of ice formation. Versions of a technical method and algorithms of the functioning of ice-formation monitoring are proposed.

  13. Design and modeling of magnetically driven electric-field sensor for non-contact DC voltage measurement in electric power systems

    NASA Astrophysics Data System (ADS)

    Wang, Decai; Li, Ping; Wen, Yumei

    2016-10-01

    In this paper, the design and modeling of a magnetically driven electric-field sensor for non-contact DC voltage measurement are presented. The magnetic drive structure of the sensor is composed of a small solenoid and a cantilever beam with a cylindrical magnet mounted on it. The interaction of the magnet and the solenoid provides the magnetic driving force for the sensor. Employing magnetic drive structure brings the benefits of low driving voltage and large vibrating displacement, which consequently results in less interference from the drive signal. In the theoretical analyses, the capacitance calculation model between the wire and the sensing electrode is built. The expression of the magnetic driving force is derived by the method of linear fitting. The dynamical model of the magnetic-driven cantilever beam actuator is built by using Euler-Bernoulli theory and distributed parameter method. Taking advantage of the theoretical model, the output voltage of proposed sensor can be predicted. The experimental results are in good agreement with the theoretical results. The proposed sensor shows a favorable linear response characteristic. The proposed sensor has a measuring sensitivity of 9.87 μV/(V/m) at an excitation current of 37.5 mA. The electric field intensity resolution can reach 10.13 V/m.

  14. Electrical, Chemical, And Microstructural Analysis of the Thermal Stability of Nickel-based Ohmic Contacts to Silicon Carbide for High-Temperature Electronics

    NASA Astrophysics Data System (ADS)

    Virshup, Ariel R.

    With increasing attention on curbing the emission of pollutants into the atmosphere, chemical sensors that can be used to monitor and control these unwanted emissions are in great demand. Examples include monitoring of hydrocarbons from automobile engines and monitoring of flue gases such as CO emitted from power plants. One of the critical limitations in high-temperature SiC gas sensors, however, is the degradation of the metal-SiC contacts over time. In this dissertation, we investigated the high-temperature stability of Pt/TaSix/Ni/SiC ohmic contacts, which have been implemented in SiC-based gas sensors developed for applications in diesel engines and power plants. The high-temperature stability of a Pt/TaSi2/Ni/SiC ohmic contact metallization scheme was characterized using a combination of current-voltage measurements, Auger electron spectroscopy, secondary ion mass spectrometry, and transmission electron microscope imaging and associated analytical techniques. Increasing the thicknesses of the Pt and TaSi2 layers promoted electrical stability of the contacts, which remained ohmic at 600°C in air for over 300 h; the specific contact resistance showed only a gradual increase from an initial value of 5.2 x 10-5 O-cm 2. We observed a continuous silicon-oxide layer in the thinner contact structures, which failed after 36 h of heating. It was found that the interface between TaSix and NiySi was weakened by the accumulation of free carbon (produced by the reaction of Ni and SiC), which in turn facilitated oxygen diffusion from the contact edges. Additional oxygen diffusion occurred along grain boundaries in the Pt overlayer. Meanwhile, thicker contacts, with less interfacial free carbon and enhanced electrical stability contained a much lower oxygen concentration that was distributed across the contact layers, precluding the formation of an electrically insulating contact structure.

  15. Interfacial characterization and electrical properties of Ni–GaSb contacts

    SciTech Connect

    Lin, Kun-Lin Chen, Szu-Hung

    2014-10-06

    The microstructural characterization of Ni–GaSb junctions in samples annealed at 300 °C, 350 °C, and 400 °C in a N{sub 2} atmosphere was elucidated using transmission electron microscopy in conjunction with energy-dispersive spectrometry, nanobeam electron diffraction, and grazing-incident X-ray diffraction. Only the NiSb(Ga) phase is formed at the interface of Ni/GaSb when the annealing temperature is below 350 °C. However, three phases—NiSb, Ni{sub 2}Ga{sub 3}, and NiSb(Ga)—are formed simultaneously at the interface between Ni/GaSb when the annealing temperature is increased to 400 °C, which causes a significant increase in the sheet resistance of the Ni–GaSb alloy. These results indicate that the annealing temperature of the Ni/GaSb structure should be maintained below 350 °C for the formation of low-resistance metal Ni/GaSb contacts in GaSb-based p-type metal-oxide-semiconductor field-effect transistors.

  16. Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

    SciTech Connect

    Devender,; Mehta, Rutvik J.; Ramanath, Ganpati; Lofgreen, Kelly; Mahajan, Ravi; Yamaguchi, Masashi; Borca-Tasciuc, Theodorian

    2015-03-15

    Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.

  17. Tunable All Electric Spin Polarizer Using A Quantum Point Contact With Two Pairs of In-Plane Side Gates

    NASA Astrophysics Data System (ADS)

    Bhandari, Nikhil; Charles, James; Dutta, Maitreya; Das, Partha; Cahay, Marc; Newrock, Richard; Herbert, Steven

    2013-03-01

    We report the first experimental investigation of a device consisting of a quantum point contact (QPC) with four gates - two in-plane side gates in series. The first set of gates (nearest the source contact) is asymmetrically biased to create spin polarization in the channel of the QPC. A symmetric bias is then applied on the second set of side gates (nearest the drain) and varied to tune the location of a conductance anomaly near 0.5 (x2e2/h). The experimental results compare well with simulations of the four-gate QPC devices using a Non-Equilibrium Green's Function formalism. The device is shown to be a tunable all-electric spin polarizer. The range of common-mode bias on the first set of gates over which maximum spin polarization can be achieved is much broader for the four-gate structure compared with the case of a QPC with a single pair of in-plane side gates. This work is supported by NSF under Award 1028483.

  18. Evaluation of electric arc furnace-processed steel slag for dermal corrosion, irritation, and sensitization from dermal contact.

    PubMed

    Suh, Mina; Troese, Matthew J; Hall, Debra A; Yasso, Blair; Yzenas, John J; Proctor, Debora M

    2014-12-01

    Electric arc furnace (EAF) steel slag is alkaline (pH of ~11-12) and contains metals, most notably chromium and nickel, and thus has potential to cause dermal irritation and sensitization at sufficient dose. Dermal contact with EAF slag occurs in many occupational and environmental settings because it is used widely in construction and other industrial sectors for various applications including asphaltic paving, road bases, construction fill, and as feed for cement kilns construction. However, no published study has characterized the potential for dermal effects associated with EAF slag. To assess dermal irritation, corrosion and sensitizing potential of EAF slag, in vitro and in vivo dermal toxicity assays were conducted based on the Organisation for Economic Co-operation and Development (OECD) guidelines. In vitro dermal corrosion and irritation testing (OECD 431 and 439) of EAF slag was conducted using the reconstructed human epidermal (RHE) tissue model. In vivo dermal toxicity and delayed contact sensitization testing (OECD 404 and 406) were conducted in rabbits and guinea pigs, respectively. EAF slag was not corrosive and not irritating in any tests. The results of the delayed contact dermal sensitization test indicate that EAF slag is not a dermal sensitizer. These findings are supported by the observation that metals in EAF slag occur as oxides of low solubility with leachates that are well below toxicity characteristic leaching procedure (TCLP) limits. Based on these results and in accordance to the OECD guidelines, EAF slag is not considered a dermal sensitizer, corrosive or irritant. Copyright © 2014 John Wiley & Sons, Ltd.

  19. A non-contact energy transferring system for an electric vehicle-charging system based on recycled products

    NASA Astrophysics Data System (ADS)

    Matsuda, Y.; Sakamoto, H.; Shibuya, H.; Murata, S.

    2006-04-01

    A non-contact automatic charging system for electric vehicle application is presented. The principle is the same as that of the transformer where the primary and the secondary circuits are separable but coupled with each other without using the hand coupler. In this paper, we present a possibility of removing the core of the secondary coil on the body for reducing the weight of the car. In our experiments, the primary core, which is placed on the earth floor, is made of Mn-Zn ferrite with square shape as 1 m×1 m×10 mm for a large cross-sectional area. The steel floor of the car assists to pass the magnetic flux. An efficiency rate over 90% with the test device of 2 kW is obtained without the conventional secondary core. The leakage inductance is well compensated by a resonance capacitor inserted in the secondary coil. In this experiment, the distance between the primary and the secondary coil is 100 mm and the switching frequency is 100 kHz. In addition, we developed a pavement method for the system. The method utilizes plates made from the waste of expanded polystyrene and rubber mats made from used tire. The plates are set up on the rubber mats and these mats are arranged over the non-contact charging system. The pavements can be replaced easily when the system is exchanged. Therefore, this pavement method is not only practical for the non-contact charging system but is also useful for recycling of resources and reduction of waste matters.

  20. Calculation of optimal modes for electric-contact welding of rails of mine haulage tracks

    NASA Astrophysics Data System (ADS)

    Shevchenko, R. A.; Kozyrev, N. A.; Usoltsev, A. A.; Kriukov, R. E.; Shishkin, P. E.

    2017-09-01

    The choice of thermal regime is based on the exclusion of formation of quenching structures (martensite and bainite), causing additional stresses and cracks which lead to the destruction of rails. After welded joint upset and cooling at the time of reaching the required temperature it is proposed to perform quasi-isothermal exposure by passing pulses of alternating current through the welded joint. The method for calculating the quasi-isothermal exposure is described that depends on the strength of the welding current and different rails section. It is suggested that after welding the rails during quenching, a quasi-isothermal holding is carried out in the temperature range of the formation of the fine-dispersed structure by passing pulses of alternating electric current through the welded joint maintaining this temperature until the end of the transformation. It is shown that the use of quasi-isothermal exposure at a chosen temperature of 600 – 650 °C makes it possible to obtain a finely dispersed structure of the welded seam of rails of mine haulage tracks without additional heat treatment.

  1. A decade of occupational accidents due to direct or indirect electrical contact in the primary, secondary and tertiary sectors in Spain (2003-2012).

    PubMed

    Castillo-Rosa, Juan; Suárez-Cebador, Manuel; Rubio-Romero, Juan Carlos; Aguado, Jose Antonio

    2017-03-01

    Occupational accidents caused by electrical contact are a major concern worldwide due to their severe consequences. The study conducted is based on an analysis of the evolution of incidence rates and dependence between variables for 14,022 electrical accidents occurring in Spain between 2003 and 2012. The results show that electrical accidents as a whole are 3.6 times more likely to have severe consequences than the rest of the accidents in the country. This proportion is even nine times greater in the case of fatal accidents. They also confirm a significant relationship between the severity of this type of accidents and the economic sector in which they occur. On the other hand, there is a positive trend in the reduction of the incidence rate, especially in relation to direct contact, although unexpectedly the rate of accidents due to indirect contact is on the rise. Thus, preventing electrical occupational accidents requires efforts to guarantee adequate training adapted to the needs of workers in the various economic sectors. Furthermore, those responsible for safety should work to implement mechanisms to monitor and control compliance with efficient protective measures against electrical contact.

  2. Impact of incomplete metal coverage on the electrical properties of metal-CNT contacts: A large-scale ab initio study

    SciTech Connect

    Fediai, Artem Ryndyk, Dmitry A.; Seifert, Gotthard; Mothes, Sven; Schroter, Michael; Claus, Martin; Cuniberti, Gianaurelio

    2016-09-05

    Using a dedicated combination of the non-equilibrium Green function formalism and large-scale density functional theory calculations, we investigated how incomplete metal coverage influences two of the most important electrical properties of carbon nanotube (CNT)-based transistors: contact resistance and its scaling with contact length, and maximum current. These quantities have been derived from parameter-free simulations of atomic systems that are as close as possible to experimental geometries. Physical mechanisms that govern these dependences have been identified for various metals, representing different CNT-metal interaction strengths from chemisorption to physisorption. Our results pave the way for an application-oriented design of CNT-metal contacts.

  3. Electrical contacts to individual nanostructures and fabrication of nanoscale gaps by feedback controlled electromigration

    NASA Astrophysics Data System (ADS)

    Johnston, Danvers Errol

    The transport characteristics of nano---electronic devices are determined not only by the electronic structure of the underlying nanostructure, but also by the detailed properties of the electrode---nanostructure interface and by transport through undesirable parasitic conduction pathways. Because nanoparticle and single molecule devices require the use of nano-scale gaps, they are particularly prone to suffer from parasitic conduction pathways. It has been shown that transport data from both as---fabricated nanogaps and nanogaps combined with nanostructures can exhibit signatures of quantum transport such as Coulomb blockade and the Kondo effect. We investigate electronic devices that require nanogaps smaller than the resolution of electron beam lithography (<25 nm) and develop a technique of feedback controlled electromigration (FCE) to make nanometer---spaced electrodes in ambient lab conditions. Nanogap formation occurs through three regimes: a bulk---behavior regime where electromigration is triggered at constant temperature, a few-atom regime with conductance characterized by conductance quantum plateaus and jumps, and a tunneling regime across the nanogap once the conductance falls below the conductance quantum G0 = 2e2/h. To permit the use of transmission electron microscopy (TEM) to image the gaps, we fabricated nanogaps on free-standing transparent SiNx membranes. The electrodes are found to be clear of any apparent debris and are stable on the order of hours. Real-time transmission electron microscopy of nanogap formation by FCE reveals a remarkable degree of crystalline order. Crystal facets appear during FCE indicating a layer-by-layer, highly reproducible electromigration process that avoids thermal runaway and melting. Additionally, we describe investigations of dielectrophoretic (DEP) assembly of nanogap electronic devices based on single Au nanoparticles (AuNPs). A symmetric electrical circuit design suitable for DEP on oxidized Si and Si

  4. Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect

    Iucolano, Ferdinando; Greco, Giuseppe; Roccaforte, Fabrizio

    2013-11-11

    This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρ{sub C}, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρ{sub C} exhibits a “metal-like” behavior, i.e., describable by a T{sup 1.8} dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.

  5. Comparing the electrical characteristics and reliabilities of BJTs and MOSFETs between Pt and Ti contact silicide processes

    NASA Astrophysics Data System (ADS)

    Liu, Kaiping; Shang, Ling

    1999-08-01

    The sub-threshold characteristics and the reliability of BJTs, using platinum contact silicide (PtSi) or titanium contact silicide (TiSi2), are compared and analyzed. During processing, it is observed that the TiSi2 process produces higher interface state density (Dit) than the PtSi process. The increase in Dit not only leads to a higher base current in the BJTs, but also leads to a lower transconductance for the MOS transistors. The data also show that the impact on NPN and nMOS is more severe than the impact of PNP and pMOS, respectively. This can be explained by the non-symmetric interface state distribution, the re- activation of boron, and/or by substrate trap centers. The amount of interface states produced depends not only on the thickness of the titanium film deposited, but also on the temperature and duration of the titanium silicide process. The electrical data indicates that after all the Back-End- Of-The-Line processing steps, which includes a forming gas anneal, Dit is still higher on wafers with the TiSi2 transistor's base current increases at different rates between the two processes, but eventually levels off to the same final value. However, the PNP transistor's base current increases at approximately the same rate, but eventually levels off at different final values. These indicate that the TiSi2 process may have modified the silicon and oxygen dangling bond structure during its high temperature process in addition to removing the hydrogen from the passivated interface states.

  6. Improved study of electric dipoles on the Si(100)-2 × 1 surface by non-contact scanning nonlinear dielectric microscopy

    SciTech Connect

    Suzuki, Masataka; Yamasue, Kohei; Cho, Yasuo; Abe, Masayuki; Sugimoto, Yoshiaki

    2014-09-08

    We studied a Si(100)-2 × 1 surface by non-contact scanning nonlinear dielectric microscopy (NC-SNDM). Simultaneously taken images of the topography and electric dipole moment distribution show that negative electric dipole moments are locally formed on individual dimers on the surface. In addition, we obtained the dc bias voltage dependence of the ε{sub local}(3) signal on a specific dimer by using an atom-tracking technique with NC-SNDM. We observed that the electric dipole induced a surface potential of around −250 mV on the dimer.

  7. Electric field effects on spin accumulation in Nb-doped SrTiO{sub 3} using tunable spin injection contacts at room temperature

    SciTech Connect

    Kamerbeek, A. M.; Vries, E. K. de; Wees, B. J. van; Banerjee, T.; Dankert, A.; Dash, S. P.

    2014-05-26

    We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO{sub 3}. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO{sub 3} which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.

  8. Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

    PubMed

    Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

    2015-12-05

    Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed

  9. Investigation of Different Metals as Ohmic Contacts to β-Ga2O3: Comparison and Analysis of Electrical Behavior, Morphology, and Other Physical Properties

    NASA Astrophysics Data System (ADS)

    Yao, Yao; Davis, Robert F.; Porter, Lisa M.

    2017-04-01

    Nine metals (Ti, In, Ag, Sn, W, Mo, Sc, Zn, and Zr) have been investigated as electrical contacts to n-type single-crystal β-Ga2O3 substrates as a function of annealing temperature up to 800°C (in flowing Ar). For each contact metal, we investigated its electrical behavior and morphology at each annealing temperature, as well as the effects of adding a Au capping layer. Select metals displayed either ohmic (Ti and In) or pseudo-ohmic (Ag, Sn, and Zr) behavior under certain conditions; however, the morphology was often a problem. It was concluded that metal work function is not a dominant factor in forming an ohmic contact to β-Ga2O3 and that limited interfacial reactions play an important role.

  10. Application of the contact electric resistance method for in situ investigation of semiconductor surface properties in electrolyte

    NASA Astrophysics Data System (ADS)

    Charny, L.; Saario, T.; Marichev, V. A.

    1994-06-01

    The contact electric resistance method (CER) has been applied for in situ investigation of the charge transfer through the semiconductor surface under potentiostatic control in electrolytes. Single crystals of n- and p-GaAs were investigated. As a result of changing the electrochemical potential, two simultaneous tendencies of surface resistance changes were observed. The first type of resistance change, which occurs immediately after application of the potential, is caused by band bending at the surface charge region. The second type of resistance change, characterized by a power law dependence on time, is caused by adsorption and / or oxidation processes at the surface. The surface resistance sharply increases close to the As/As 2O 3 (As/HAsO 2) equilibrium potential, but does not change at potentials close to the Ga/Ga(OH) 3 equilibrium potential. In addition, the influence of the sulphur content of the electrolyte on the surface resistance was investigated in 0.01M, 0.1M and 1M Na 2S borate buffer solutions. At potentials lower than -0.8 V SCE sulphur was found to adsorb competitively on GaAs and to prevent adsorption of borate and hydroxyl anions, resulting in reduction of the surface resistance.

  11. Modelling of segmented high-performance thermoelectric generators with effects of thermal radiation, electrical and thermal contact resistances.

    PubMed

    Ouyang, Zhongliang; Li, Dawen

    2016-04-07

    In this study, segmented thermoelectric generators (TEGs) have been simulated with various state-of-the-art TE materials spanning a wide temperature range, from 300 K up to 1000 K. The results reveal that by combining the current best p-type TE materials, BiSbTe, MgAgSb, K-doped PbTeS and SnSe with the strongest n-type TE materials, Cu-Doped BiTeSe, AgPbSbTe and SiGe to build segmented legs, TE modules could achieve efficiencies of up to 17.0% and 20.9% at ΔT = 500 K and ΔT = 700 K, respectively, and a high output power densities of over 2.1 Watt cm(-2) at the temperature difference of 700 K. Moreover, we demonstrate that successful segmentation requires a smooth change of compatibility factor s from one end of the TEG leg to the other, even if s values of two ends differ by more than a factor of 2. The influence of the thermal radiation, electrical and thermal contact effects have also been studied. Although considered potentially detrimental to the TEG performance, these effects, if well-regulated, do not prevent segmentation of the current best TE materials from being a prospective way to construct high performance TEGs with greatly enhanced efficiency and output power density.

  12. Modelling of segmented high-performance thermoelectric generators with effects of thermal radiation, electrical and thermal contact resistances

    NASA Astrophysics Data System (ADS)

    Ouyang, Zhongliang; Li, Dawen

    2016-04-01

    In this study, segmented thermoelectric generators (TEGs) have been simulated with various state-of-the-art TE materials spanning a wide temperature range, from 300 K up to 1000 K. The results reveal that by combining the current best p-type TE materials, BiSbTe, MgAgSb, K-doped PbTeS and SnSe with the strongest n-type TE materials, Cu-Doped BiTeSe, AgPbSbTe and SiGe to build segmented legs, TE modules could achieve efficiencies of up to 17.0% and 20.9% at ΔT = 500 K and ΔT = 700 K, respectively, and a high output power densities of over 2.1 Watt cm-2 at the temperature difference of 700 K. Moreover, we demonstrate that successful segmentation requires a smooth change of compatibility factor s from one end of the TEG leg to the other, even if s values of two ends differ by more than a factor of 2. The influence of the thermal radiation, electrical and thermal contact effects have also been studied. Although considered potentially detrimental to the TEG performance, these effects, if well-regulated, do not prevent segmentation of the current best TE materials from being a prospective way to construct high performance TEGs with greatly enhanced efficiency and output power density.

  13. Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells.

    PubMed

    Lee, Ya-Ju; Yao, Yung-Chi; Yang, Chia-Hao

    2013-01-14

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07 x 10⁻³Ω-cm underwent RTA treatment of T = 450°C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7 x 10²⁰ cm⁻³ and 15.8 cm²/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5 G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56 V, and a short circuit current of JSC = 1.54 mA/cm² with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.

  14. Modelling of segmented high-performance thermoelectric generators with effects of thermal radiation, electrical and thermal contact resistances

    PubMed Central

    Ouyang, Zhongliang; Li, Dawen

    2016-01-01

    In this study, segmented thermoelectric generators (TEGs) have been simulated with various state-of-the-art TE materials spanning a wide temperature range, from 300 K up to 1000 K. The results reveal that by combining the current best p-type TE materials, BiSbTe, MgAgSb, K-doped PbTeS and SnSe with the strongest n-type TE materials, Cu-Doped BiTeSe, AgPbSbTe and SiGe to build segmented legs, TE modules could achieve efficiencies of up to 17.0% and 20.9% at ΔT = 500 K and ΔT = 700 K, respectively, and a high output power densities of over 2.1 Watt cm−2 at the temperature difference of 700 K. Moreover, we demonstrate that successful segmentation requires a smooth change of compatibility factor s from one end of the TEG leg to the other, even if s values of two ends differ by more than a factor of 2. The influence of the thermal radiation, electrical and thermal contact effects have also been studied. Although considered potentially detrimental to the TEG performance, these effects, if well-regulated, do not prevent segmentation of the current best TE materials from being a prospective way to construct high performance TEGs with greatly enhanced efficiency and output power density. PMID:27052592

  15. Effects of tissue conductivity and electrode area on internal electric fields in a numerical human model for ELF contact current exposures

    NASA Astrophysics Data System (ADS)

    Tarao, H.; Kuisti, H.; Korpinen, L.; Hayashi, N.; Isaka, K.

    2012-05-01

    Contact currents flow through the human body when a conducting object with different potential is touched. There are limited reports on numerical dosimetry for contact current exposure compared with electromagnetic field exposures. In this study, using an anatomical human adult male model, we performed numerical calculation of internal electric fields resulting from 60 Hz contact current flowing from the left hand to the left foot as a basis case. Next, we performed a variety of similar calculations with varying tissue conductivity and contact area, and compared the results with the basis case. We found that very low conductivity of skin and a small electrode size enhanced the internal fields in the muscle, subcutaneous fat and skin close to the contact region. The 99th percentile value of the fields in a particular tissue type did not reliably account for these fields near the electrode. In the arm and leg, the internal fields for the muscle anisotropy were identical to those in the isotropy case using a conductivity value longitudinal to the muscle fibre. Furthermore, the internal fields in the tissues abreast of the joints such as the wrist and the elbow, including low conductivity tissues, as well as the electrode contact region, exceeded the ICNIRP basic restriction for the general public with contact current as the reference level value.

  16. Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

    SciTech Connect

    Nirwal, Varun Singh Singh, Joginder; Gautam, Khyati; Peta, Koteswara Rao

    2016-05-06

    We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10{sup −5} A to 7.31×10{sup −7} A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of R{sub s} decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.

  17. Extended Aging of Ag/W Circuit Breaker Contacts: Influence on Surface Structure, Electrical Properties, and UL Testing Performance

    NASA Astrophysics Data System (ADS)

    Yu, Haibo; Kesim, M. Tumerkan; Sun, Yu; Harmon, Jason; Potter, Jonathan; Alpay, S. Pamir; Aindow, Mark

    2016-01-01

    Samples of 120 V, 30 A commercial circuit breakers were subjected to various aging treatments and the resulting microstructures at the surfaces of the Ag/W contacts were studied using a combination of x-ray diffraction, scanning electron microscopy, and energy-dispersive x-ray spectroscopy techniques. Breakers aged naturally in a hot, humid climate were compared to those subjected to accelerated aging in dry and humid environments. The most extensive oxidation was observed for contacts from breakers subjected to accelerated humid aging; these contacts exhibited thick surface layers consisting of Ag2O, Ag2WO4, Cu(OH)2•H2O, and WO3 phases. Far less surface degradation was observed for dry-aged contacts. Naturally aged contacts showed variations in degradation with more oxidation at the surface regions outside the physical contact area on the contact face. A correlation was found between the contact resistances measured from these samples following ASTM standard B 667-97 and the observed surface microstructures. To evaluate the effects of the surface oxides on breaker performance, humid-aged breakers were subjected to standardized UL overload/temperature-rise, endurance, and short-circuit testing following UL489. The contacts in these breakers exhibit similar microstructural and property changes to those observed previously for as-manufactured contacts after UL testing. These data illustrate the robust performance of this contact technology even after being subjected to aggressive artificial aging.

  18. The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1991-01-01

    The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

  19. Candidate sites of action for microdosimetry associated with exposure to extremely-low-frequency magnetic fields, electric fields and contact currents.

    PubMed

    Sastre, Antonio; Kavet, Robert

    2002-09-01

    Recent advances enable one to apply numerical techniques to anatomically-correct human models to compute current densities and electric fields in tissue due to exposure to electric fields, magnetic fields, or contact currents. These methods have proved to be informative in estimating exceedance of basic restrictions prescribed by exposure guideline organizations. To date, the analyses have been conducted with a resolution on the order of millimeters. However, these techniques have future roles to play at higher levels of resolution at those sites in target tissues suspected of transducing local electric fields into biological responses. Two specific cases in which high resolution "microdosimetry" would yield value involve (a) residential settings and childhood leukemia and (b) worker exposure and cardiovascular disease. Recent research suggests that residential contact currents on the order of microamperes can produce biologically significant dose (expressed as the local electric field) to the bone marrow of a child. Microdosimetry would focus on pluripotent progenitor cells resident in the marrow compartment, as well as anatomic features that distinguish a child's from an adult's marrow. Laboratory and epidemiologic research has suggested that magnetic field exposure may affect heart rate variability, a measure reflective of autonomic nervous system control of cardiac activity. Given the physical attributes of the central nervous system and the sites that could serve as substrates for field interactions, future microdosimetry addressing heart rate variability effects may be well-advised to focus on the electrically excitable dendritic arborizations of neurons. In both cases, microdosimetry will help shed light on primary interactions in tissue.

  20. Experimental study of electric dipoles on an oxygen-adsorbed Si(100)-2 × 1 surface by non-contact scanning nonlinear dielectric microscopy

    SciTech Connect

    Suzuki, Masataka; Yamasue, Kohei Cho, Yasuo

    2015-07-20

    Oxygen-adsorption on a Si(100)-2 × 1 surface is investigated by using non-contact scanning nonlinear dielectric microscopy (NC-SNDM). On the Si(100)-2 × 1 surface exposed to oxygen (O{sub 2}) gas at room temperature, several variations in atomic configuration and electric dipole moment of dimers are observed. Models are proposed for oxygen adsorption which are consistent with the topographies and electric dipole moment distributions obtained by NC-SNDM.

  1. Distributions of ionic concentrations and electric field around the three-phase contact at high rates of Langmuir-Blodgett deposition.

    PubMed

    Bondarenko, M P; Zholkovskiy, E K; Kovalchuk, V I; Vollhardt, D

    2006-02-02

    A mathematical problem is formulated and numerically solved for addressing the electric field and ionic concentration distributions developing around the three-phase contact line during the Langmuir-Blodgett deposition of charged monolayers. Compared to a previous paper dealing with the same effect (J. Phys. Chem. B 2004, 108, 13449), the present analysis is not restricted to the case of low deposition rates and small concentration changes. The obtained results show that, for sufficiently high deposition rates, the subphase composition substantially changes in the immediate vicinity of the three-phase contact line. It is shown that the predicted changes in the subphase composition can drastically affect the adhesion work and the dynamic contact angle. On this basis, the influence of the concentration polarization effect on meniscus behavior is discussed.

  2. Electric-field enhanced thermionic emission model for carrier injection mechanism of organic field-effect transistors: understanding of contact resistance

    NASA Astrophysics Data System (ADS)

    Li, Jun; Ou-Yang, Wei; Weis, Martin

    2017-01-01

    We developed an electric-field enhanced thermionic emission model combined with an equivalent circuit for a three-terminal organic transistor structure to interpret the gate-voltage dependent contact resistance. In the model the contact resistance is composed of two components: (i) the interfacial resistance not only influenced by interfacial energy barrier but also strongly dependent on active layer thickness, and (ii) the bulk resistance that is affected only by active layer itself. The model having physical meaning in the fitting parameters, different from the previous with simple power functions, can well fit the voltage dependence for a series of independent data. In addition, the bulk resistance component can be extracted and is estimated reasonable for the first time, which is demonstrated not to be neglected even for the devices with high effective mobility. The developed model will be helpful for understanding of contact resistance and charge carrier injection behavior in the organic thin film transistors.

  3. Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

    NASA Astrophysics Data System (ADS)

    Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

    2017-10-01

    In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

  4. Dual contact pogo pin assembly

    DOEpatents

    Hatch, Stephen McGarry

    2016-06-21

    A contact assembly includes a base and a pair of electrical contacts supported by the base. A first end of the first electrical contact corresponds to a first end of the base and is configured to engage a first external conductive circuit element. A first end of the second electrical contact also corresponds to the first end of the base and is configured to engage a second external conductive circuit element. The first contact and the second contact are electrically isolated from one another and configured to compress when engaging an external connector element. The base includes an aperture positioned on a second end of the base outboard of a second end of the first and second electrical contacts. The aperture presents a narrowing shape with a wide mouth distal the electrical contacts and a narrow internal through-hole proximate the electrical contacts.

  5. Dual contact pogo pin assembly

    DOEpatents

    Hatch, Stephen McGarry

    2015-01-20

    A contact assembly includes a base and a pair of electrical contacts supported by the base. A first end of the first electrical contact corresponds to a first end of the base and is configured to engage a first external conductive circuit element. A first end of the second electrical contact also corresponds to the first end of the base and is configured to engage a second external conductive circuit element. The first contact and the second contact are electrically isolated from one another and configured to compress when engaging an external connector element. The base includes an aperture positioned on a second end of the base outboard of a second end of the first and second electrical contacts. The aperture presents a narrowing shape with a wide mouth distal the electrical contacts and a narrow internal through-hole proximate the electrical contacts.

  6. Therapeutic Array Transducer Element Using Coresonance between Hemispherical Piezoceramic Shell and Water Sphere: Effect of Load Masses of Support and Electric Contact

    NASA Astrophysics Data System (ADS)

    Otsu, Kenji; Yoshizawa, Shin; Umemura, Shin-ichiro

    2012-07-01

    For therapeutic ultrasound array transducers, it is necessary to reduce the electrical impedance of their elements so that the transducer can produce high ultrasonic power at a relatively low drive voltage. For this purpose, a new concept of a breathing-mode piezoceramic transducer element has been proposed. Numerical simulation showed its low electric impedance as well as good acoustical coupling between the concave hemispherical piezoceramic shell, with a diameter on the order of a wavelength in water, and the volume of a water sphere half enclosed by the shell. In the preparation of a prototype transducer, the effect of additional load masses of the flange supporting the shell and the electric contact for driving the element was numerically analyzed in this paper.

  7. Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge

    SciTech Connect

    Yamamoto, Keisuke; Nakashima, Hiroshi; Noguchi, Ryutaro; Wang, Dong; Mitsuhara, Masatoshi; Nishida, Minoru; Hara, Toru

    2015-09-21

    Electrical and structural properties were investigated for group-4 transition-metal nitride contacts on Ge (TiN/Ge, ZrN/Ge, and HfN/Ge), which were prepared by direct sputter depositions using nitride targets. These contacts could alleviate the intrinsic Fermi-level pinning (FLP) position toward the conduction band edge. It was revealed that this phenomenon is induced by an amorphous interlayer (a-IL) containing nitrogen atoms at the nitride/Ge interfaces. The strength of FLP alleviation positively depended on the thickness of a-IL. TiN/Ge and ZrN/Ge contacts with ∼2 nm-thick a-ILs showed strong FLP alleviations with hole barrier heights (Φ{sub BP}) in the range of 0.52–56 eV, and a HfN/Ge contact with an ∼1 nm-thick a-IL showed a weaker one with a Φ{sub BP} of 0.39 eV. However, TaN/Ge contact without a-IL did not show such FLP alleviation. Based on the results of depth distributions for respective elements, we discussed the formation kinetics of a-ILs at TiN/Ge and ZrN/Ge interfaces. Finally, we proposed an interfacial dipole model to explain the FLP alleviation.

  8. Organic [6,6]-phenyl-C61-butyric-acid-methyl-ester field effect transistors: Analysis of the contact properties by combined photoemission spectroscopy and electrical measurements

    NASA Astrophysics Data System (ADS)

    Scheinert, S.; Grobosch, M.; Sprogies, J.; Hörselmann, I.; Knupfer, M.; Paasch, G.

    2013-05-01

    Carrier injection barriers determined by photoemission spectroscopy for organic/metal interfaces are widely accepted to determine the performance of organic field-effect transistors (OFET), which strongly depends on this interface at the source/drain contacts. This assumption is checked here in detail, and a more sophisticated connection is presented. According to the preparation process described in our recently published article [S. Scheinert, J. Appl. Phys. 111, 064502 (2012)], we prepared PCBM/Au and PCBM/Al samples to characterize the interface by photoemission and electrical measurements of PCBM based OFETs with bottom and top (TOC) contacts, respectively. The larger drain currents for TOC OFETs indicate the presence of Schottky contacts at source/drain for both metals. The hole injection barrier as determined by photoemission is 1.8 eV for both Al and Au. Therefore, the electron injection barriers are also the same. In contrast, the drain currents are orders of magnitude larger for the transistors with the Al contacts than for those with the Au contacts. We show that indeed the injection is determined by two other properties measured also by photoemission, the (reduced) work functions, and the interface dipoles, which have different sign for each contact material. In addition, we demonstrate by core-level and valence band photoemission that the deposition of gold as top contact onto PCBM results in the growth of small gold clusters. With increasing gold coverage, the clusters grow inside and begin to form a metallic, but not uniform, closed film onto PCBM.

  9. Electrical injury

    MedlinePlus

    ... damage, especially to the heart, muscles, or brain. Electric current can cause injury in three ways: Cardiac arrest ... How long you were in contact with the electricity How the electricity moved through your body Your ...

  10. A comparison of gold versus silver electrode contacts for high-resolution gastric electrical mapping using flexible printed circuit board arrays.

    PubMed

    O'Grady, G; Paskaranandavadivel, N; Angeli, T R; Du, P; Windsor, J A; Cheng, L K; Pullan, A J

    2011-03-01

    Stomach contractions are initiated and coordinated by electrical events termed slow waves, and slow wave abnormalities contribute to gastric motility disorders. Recently, flexible printed circuit board (PCB) multi-electrode arrays were introduced, facilitating high-resolution mapping of slow wave activity in humans. However PCBs with gold contacts have shown a moderately inferior signal quality to previous custom-built silver-wire platforms, potentially limiting analyses. This study determined if using silver instead of gold contacts improved flexible PCB performance. In a salt-bath test, modestly higher stimulus amplitudes were recorded from silver PCBs (mean 312, s.d. 89 µV) than those from gold (mean 281, s.d. 85 µV) (p < 0.001); however, the signal-to-noise ratio (SNR) was similar (p = 0.26). In eight in vivo experimental studies, involving gastric serosal recordings from five pigs, no silver versus gold differences were found in terms of slow wave amplitudes (mean 677 versus 682 µV; p = 0.91), SNR (mean 8.8 versus 8.8 dB; p = 0.94) or baseline drift (NRMS; mean 12.0 versus 12.1; p = 0.97). Under the prescribed conditions, flexible PCBs with silver or gold contacts provide comparable results in vivo, and contact material difference does not explain the performance difference between current-generation slow wave mapping platforms. Alternative explanations for this difference and the implications for electrode design are discussed.

  11. A comparison of gold vs silver electrode contacts for high-resolution gastric electrical mapping using flexible printed circuit board arrays

    PubMed Central

    O’Grady, G; Paskaranandavadivel, N; Angeli, T R; Du, P; Windsor, J A; Cheng, L K; Pullan, A J

    2014-01-01

    Stomach contractions are initiated and coordinated by electrical events termed slow waves, and slow wave abnormalities contribute to gastric motility disorders. Recently, flexible printed circuit board (PCB) multi-electrode arrays were introduced, facilitating high-resolution mapping of slow wave activity in humans. However PCBs with gold-contacts have shown a moderately inferior signal quality to previous custom-built silver-wire platforms, potentially limiting analyses. This study determined if using silver instead of gold contacts improved flexible PCB performance. In a salt-bath test, modestly higher stimulus amplitudes were recorded from silver PCBs (mean 312 s.d. 89 μV) than gold (mean 281 s.d. 85 μV) (p<0.001); however the signal to noise ratio (SNR) was similar (p=0.26). In eight in-vivo experimental studies, involving gastric serosal recordings from five pigs, no silver vs gold differences were found in terms of slow wave amplitudes (mean 677 vs 682 μV; p=0.91), SNR (mean 8.8 vs 8.8 dB; p=0.94) or baseline drift (NMRS; mean 12.0 vs 12.1; p=0.97). Under the prescribed conditions, flexible PCBs with silver or gold contacts provide comparable results in-vivo, and contact material difference does not explain the performance difference between current-generation slow wave mapping platforms. Alternative explanations for this difference and the implications for electrode design are discussed. PMID:21252419

  12. Orbital origin of the electrical conduction in ferromagnetic atomic-size contacts: Insights from shot noise measurements and theoretical simulations

    NASA Astrophysics Data System (ADS)

    Vardimon, R.; Matt, M.; Nielaba, P.; Cuevas, J. C.; Tal, O.

    2016-02-01

    With the goal of elucidating the nature of spin-dependent electronic transport in ferromagnetic atomic contacts, we present here a combined experimental and theoretical study of the conductance and shot noise of metallic atomic contacts made of the 3 d ferromagnetic materials Fe, Co, and Ni. For comparison, we also present the corresponding results for the noble metal Cu. Conductance and shot noise measurements, performed using a low-temperature break-junction setup, show that in these ferromagnetic nanowires, (i) there is no conductance quantization of any kind, (ii) transport is dominated by several partially open conduction channels, even in the case of single-atom contacts, and (iii) the Fano factor of large contacts saturates to values that clearly differ from those of monovalent (nonmagnetic) metals. We rationalize these observations with the help of a theoretical approach that combines molecular dynamics simulations to describe the junction formation with nonequilibrium Green's function techniques to compute the transport properties within the Landauer-Büttiker framework. Our theoretical approach successfully reproduces all the basic experimental results and it shows that all the observations can be traced back to the fact that the d bands of the minority-spin electrons play a fundamental role in the transport through ferromagnetic atomic-size contacts. These d bands give rise to partially open conduction channels for any contact size, which in turn lead naturally to the different observations described above. Thus, the transport picture for these nanoscale ferromagnetic wires that emerges from the ensemble of our results is clearly at variance with the well established conduction mechanism that governs the transport in macroscopic ferromagnetic wires, where the d bands are responsible for the magnetism but do not take part in the charge flow. These insights provide a fundamental framework for ferromagnetic-based spintronics at the nanoscale.

  13. Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

    SciTech Connect

    Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

    2014-06-09

    We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

  14. Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts*

    PubMed Central

    Zhao, Yue; Li, Dong-sheng; Xing, Shou-xiang; Yang, De-ren; Jiang, Min-hua

    2005-01-01

    This paper reports the surface morphology and I-V curves of porous silicon (PS) samples and related devices. The observed fabrics on the PS surface were found to affect the electrical property of PS devices. When the devices were operated under different external bias (10 V or 3 V) for 10 min, their observed obvious differences in electrical properties may be due to the different control mechanisms in the Al/PS interface and PS matrix morphology. PMID:16252350

  15. Electricity

    SciTech Connect

    Sims, B.

    1983-01-01

    Historical aspects of electricity are reviewed with individual articles on hydroelectric dams, coal-burning power plants, nuclear power plants, electricity distribution, and the energy future. A glossary is included. (PSB)

  16. Non-contact measurement of the electrical conductivity and coverage density of silver nanowires for transparent electrodes using Terahertz spectroscopy

    NASA Astrophysics Data System (ADS)

    Park, Sung-Hyeon; Chung, Wan-Ho; Kim, Hak-Sung

    2017-02-01

    In this work, a terahertz time-domain spectroscopy (THz-TDS) imaging technique was used for non-contact measurement of the conductivity and coverage density (D C) of silver nanowires (SNWs) as transparent electrodes. The reflection mode of THz-TDS with an incident angle of 30° was used, and the sheet resistance (R sh) of SNW films was measured using the four-point probe method. The correlations between the THz reflection ratio and R sh were studied by comparing the results of the four-point probe method and the measured THz reflection ratios. Also, the D C of SNWs was evaluated using THz waveforms with a general refractivity formula. This result matched well with a conventional approximation method using a scanning electron microscope image. Furthermore, defects in the SNWs could be easily detected using the THz-TDS imaging technique. The non-contact THz-TDS measurement method that we developed is expected to be a promising technique for non-contact measurement of the R sh and D C for transparent conductive electrodes.

  17. Non-contact measurement of electric potential of photovoltaic cells in a module and novel characterization technologies

    NASA Astrophysics Data System (ADS)

    Hishikawa, Yoshihiro; Yamagoe, Kengo; Onuma, Tsuyoshi

    2015-08-01

    A novel noncontact method of measuring the electric potential of component cells in photovoltaic (PV) modules is investigated using electrostatic field measurement technology. Experimental results for various kinds of PV cells and modules are presented, and their measurement principle as well as practical factors that affect the measurement results are discussed. It is demonstrated that the DC electric potential of the cells in various crystalline silicon and thin-film PV modules can be measured indoors through their cover glass or backsheet within a resolution of the output voltage of about 1 cell. The method is also applicable to the outdoor measurement of PV modules under grid-connected operation, and enables various kinds of characterization such as identifying low-performance cells in a PV module and degraded modules in a PV array, and determining the balance of their output current under outdoor operating conditions. Different distributions of electric potential measured from the front and back surfaces are observed for some types of modules. These differences are suggested, by the results of the analysis of experiments and numerical simulations, to originate from the modification of the module’s surface electric potential by slight current flow through its component materials such as the cover glass, ethylene vinyl acetate (EVA), and backsheet.

  18. Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique

    NASA Astrophysics Data System (ADS)

    Ling, C. C.; Shek, Y. F.; Huang, A. P.; Fung, S.; Beling, C. D.

    1999-02-01

    Positron-lifetime spectroscopy has been used to investigate the electric-field distribution occurring at the Au-semi-insulating GaAs interface. Positrons implanted from a 22Na source and drifted back to the interface are detected through their characteristic lifetime at interface traps. The relative intensity of this fraction of interface-trapped positrons reveals that the field strength in the depletion region saturates at applied biases above 50 V, an observation that cannot be reconciled with a simple depletion approximation model. The data, are, however, shown to be fully consistent with recent direct electric-field measurements and the theoretical model proposed by McGregor et al. [J. Appl. Phys. 75, 7910 (1994)] of an enhanced EL2+ electron-capture cross section above a critical electric field that causes a dramatic reduction of the depletion region's net charge density. Two theoretically derived electric field profiles, together with an experimentally based profile, are used to estimate a positron mobility of ~95+/-35 cm2 V-1 s-1 under the saturation field. This value is higher than previous experiments would suggest, and reasons for this effect are discussed.

  19. Improving the electrical contact at a Pt/TiO2 nanowire interface by selective application of focused femtosecond laser irradiation.

    PubMed

    Xing, Songling; Lin, Luchan; Zou, Guisheng; Liu, Lei; Peng, Peng; Wu, Aiping; Duley, Walter W; Zhou, Y Norman

    2017-10-06

    In this paper, we show that tightly focused femtosecond laser irradiation is effective in improving nanojoining of an oxide nanowire (NW) (TiO2) to a metal electrode (Pt), and how this process can be used to modify contact states. Enhanced chemical bondings are created due to localized plasmonically enhanced optical absorption at the Pt/TiO2 interface as confirmed by finite element simulations of the localized field distribution during irradiation. Nano Auger electron spectroscopy shows that the resulting heterojunction is depleted in oxygen, suggesting that a TiO2-x layer is formed between the Pt electrode and the TiO2 NW. The presence of this redox layer at the metal/oxide interface plays an important role in decreasing the Schottky barrier height and in facilitating chemical bonding. After laser irradiation at the cathode for 10 s at a fluence of 5.02 mJ cm(-2), the Pt/TiO2 NW/Pt structure displays different electrical properties under forward and reverse bias voltage, respectively. The creation of this asymmetric electrical characteristic shows the way in which modification of the electronic interface by laser engineering can replace the electroforming process in resistive switching devices and how it can be used to control contact states in a metal/oxide interface.

  20. Grain boundary diffusivity of Ni in Au thin films and the associated degradation in electrical contact resistance due to surface oxide film formation

    NASA Astrophysics Data System (ADS)

    Argibay, N.; Brumbach, M. T.; Dugger, M. T.; Kotula, P. G.

    2013-03-01

    The low temperature diffusion from a nickel strike layer through varying thickness films of gold, a common electrical contact overlayer, was characterized and correlated to changes in electrical contact resistance (ECR). The diffusivity of Ni in Au was determined by the surface accumulation method (type C kinetics) for Au film thicknesses of 280 and 994 nm at an annealing temperature of 150 °C over a 32 day period. X-ray photoelectron spectroscopy (XPS) was used to determine the rate of Ni surface accumulation. The average product of grain boundary width and diffusivity for Ni in polycrystalline Au was calculated to be δbDb≅2.0 × 10-22cm3s using the Hwang-Balluffi model, and δbDb≅2.5×10-22cm3s using the Ma-Balluffi model. ECR measurements were made in parallel to surface accumulation measurements, revealing a correlation between ECR and Ni-O surface concentration; ECR values for both film thicknesses increased by 1 to 2 orders of magnitude at saturation coverage. Film cross-sections were extracted using focused ion beam milling and analyzed via scanning transmission electron microscopy coupled with energy dispersive X-ray spectroscopy after 32 days of annealing, enabling a direct observation of the composition and thickness of the accumulated Ni-O layer, which was approximately 3 nm thick.

  1. Improving the electrical contact at a Pt/TiO2 nanowire interface by selective application of focused femtosecond laser irradiation

    NASA Astrophysics Data System (ADS)

    Xing, Songling; Lin, Luchan; Zou, Guisheng; Liu, Lei; Peng, Peng; Wu, Aiping; Duley, Walter W.; Zhou, Y. Norman

    2017-10-01

    In this paper, we show that tightly focused femtosecond laser irradiation is effective in improving nanojoining of an oxide nanowire (NW) (TiO2) to a metal electrode (Pt), and how this process can be used to modify contact states. Enhanced chemical bondings are created due to localized plasmonically enhanced optical absorption at the Pt/TiO2 interface as confirmed by finite element simulations of the localized field distribution during irradiation. Nano Auger electron spectroscopy shows that the resulting heterojunction is depleted in oxygen, suggesting that a TiO2–x layer is formed between the Pt electrode and the TiO2 NW. The presence of this redox layer at the metal/oxide interface plays an important role in decreasing the Schottky barrier height and in facilitating chemical bonding. After laser irradiation at the cathode for 10 s at a fluence of 5.02 mJ cm‑2, the Pt/TiO2 NW/Pt structure displays different electrical properties under forward and reverse bias voltage, respectively. The creation of this asymmetric electrical characteristic shows the way in which modification of the electronic interface by laser engineering can replace the electroforming process in resistive switching devices and how it can be used to control contact states in a metal/oxide interface.

  2. Ohmic Pd/Zn/Au/LaB6/Au contacts on p-type In0.53Ga0.47As: Electrical and metallurgical properties

    NASA Astrophysics Data System (ADS)

    Ressel, P.; Leech, P. W.; Veit, P.; Nebauer, E.; Klein, A.; Kuphal, E.; Reeves, G. K.; Hartnagel, H. L.

    1998-07-01

    The development of a shallow and low-resistive contact on moderately doped (p≈5×1018cm-3) In0.53Ga0.47As is demonstrated. By reducing the layer thicknesses of a conventional Pd/Zn/Pd/Au scheme to a minimum and coupling this system to an outer Au layer via an amorphous LaB6 diffusion barrier, contact resistivities ⩽1×10-6 Ω cm2 were achieved only slightly exceeding that of the conventional scheme (2-4×10-7 Ω cm2). The contact reaction depth, however, could be reduced from several hundred to well below 100 nm, since the LaB6 barrier effectively prevents the outer Au layer from reaction with the semiconductor during contact formation. The influence of Zn content on electrical and metallurgical properties has been studied by varying it over orders of magnitude using both implantation and evaporation as a means of introducing Zn into the metallization. Implanted contacts with low Zn content annealed at 375 °C exhibit a reaction depth as low as 55 nm with the Zn diffusion depth practically coinciding with the reaction depth. If Zn is evaporated, the reaction depth is enhanced and the Zn diffusion depth exceeds the reaction depth noticeably. Secondary ion mass spectrometry demonstrated the onset of ohmic behavior to be correlated with the buildup of high interfacial Zn concentrations suggesting that these contacts conform to the standard model of interfacial doping. Simultaneously a solution phase emerges, reported here first, namely (Pd,Au)12(Ga,In)5As2 based on hexagonal Pd12Ga5As2 as revealed by cross-sectional transmission electron microscopy and x-ray diffraction analysis. Contacts with evaporated Zn exhibit stable resistivity during thermal stressing at 400 °C for 24 h. The stability loss for longer times is correlated with the appearance of (Au,Pd)9In4, a solution phase based on cubic Au9In4, evolving from indiffused Au and replacing increasingly the low-resistive (Pd,Au)12(Ga,In)5As2/p+-In0.53Ga0.47As junction areas.

  3. High-resolution non-contact measurement of the electrical activity of plants in situ using optical recording

    PubMed Central

    Zhao, Dong-Jie; Chen, Yang; Wang, Zi-Yang; Xue, Lin; Mao, Tong-Lin; Liu, Yi-Min; Wang, Zhong-Yi; Huang, Lan

    2015-01-01

    The limitations of conventional extracellular recording and intracellular recording make high-resolution multisite recording of plant bioelectrical activity in situ challenging. By combining a cooled charge-coupled device camera with a voltage-sensitive dye, we recorded the action potentials in the stem of Helianthus annuus and variation potentials at multiple sites simultaneously with high spatial resolution. The method of signal processing using coherence analysis was used to determine the synchronization of the selected signals. Our results provide direct visualization of the phloem, which is the distribution region of the electrical activities in the stem and leaf of H. annuus, and verify that the phloem is the main action potential transmission route in the stems of higher plants. Finally, the method of optical recording offers a unique opportunity to map the dynamic bioelectrical activity and provides an insight into the mechanisms of long-distance electrical signal transmission in higher plants. PMID:26333536

  4. Contact-geometry engineering in a circular light-emitting diode (LED) for improved electrical and optical performances

    NASA Astrophysics Data System (ADS)

    Park, Yun Soo; Lee, Hwan Gi; Yang, Chung-Mo; Kim, Dong-Seok; Bae, Jin-Hyuk; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man

    2013-01-01

    GaN light-emitting diodes (LEDs) based on circular mesa structure are fabricated and their electrical and optical characterizations are performed. The uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p-type GaN ring electrode around the perimeter. The symmetric electrode structuring substantially improved the electrical and optical performances. The operating voltage for C-LED at a reference current (100 mA) was 20.9% lower than that of a conventionally structured LED (CV-LED). Also, C-LED showed 19.4% higher optical output power than CV-LED.

  5. Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures

    NASA Astrophysics Data System (ADS)

    Sarpatwari, Karthik

    The work presented in this thesis comprises of two parts. Part I deals with Schottky contacts to the wide bandgap (WBG) semiconductors SiC, GaN and ZnO. These semiconductors offer great promise for a wide variety of electronic and optoelectronic applications. Schottky barriers to WBG semiconductors are attractive in particular for high temperature/high power diodes, photodetectors, and gas sensors. However, the Schottky barriers exhibit non-ideal behavior, due in part to inhomogeneities originating from immature crystal growth and device processing technologies. Apart from being a versatile electronic component, the Schottky diode is a valuable test structure. The Schottky contact is routinely used to probe substrate and epilayer quality by different electrical characterization techniques. It is well established that the current-voltage-temperature ( I-V-T) characteristics of Schottky contacts are routinely affected by the presence of barrier height inhomogeneities (BHI). Consequently, Schottky diode parameters such as the Schottky barrier height and the Richardson constant extracted using the I-V-T measurements can deviate from their actual values. The effects of BHI on the extracted Schottky barrier height have been studied in the literature. However, the effects of BHI on the Richardson constant have not been thoroughly explored and are the focus of the first part of this thesis. Based on the inhomogeneous Schottky barrier model provided by Tung, a new method for the extraction of the Richardson constant is developed. The new method is applied to the Richardson constant determination of n-type ZnO and GaN. Excellent agreement with the theoretical value is obtained in both cases. The advent of the nanoelectronics era has resulted in the Schottky contact evolving from the relatively simple, planar structure into a more complex structure. Compared to bulk Schottky contacts, the Schottky barrier properties are expected to be widely different at the nanoscale. For

  6. Contact dermatitis

    MedlinePlus

    Dermatitis - contact; Allergic dermatitis; Dermatitis - allergic; Irritant contact dermatitis; Skin rash - contact dermatitis ... There are 2 types of contact dermatitis. Irritant dermatitis: This ... can be by contact with acids, alkaline materials such as soaps ...

  7. Solar cell with back side contacts

    DOEpatents

    Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J; Wanlass, Mark Woodbury; Clews, Peggy J

    2013-12-24

    A III-V solar cell is described herein that includes all back side contacts. Additionally, the positive and negative electrical contacts contact compoud semiconductor layers of the solar cell other than the absorbing layer of the solar cell. That is, the positive and negative electrical contacts contact passivating layers of the solar cell.

  8. Dependences of the electrical properties on the diameter and the doping concentration of the Si nanowire field effect transistors with a Schottky metal-semiconductor contact.

    PubMed

    You, Joo Hyung; Lee, Se Han; You, Chan Ho; Yu, Yun Seop; Kim, Tae Whan

    2010-05-01

    A compact model of the current-voltage (I-V) characteristics for the Si nanowire field effect transistor (FET) taking into account dependence of the analytical electrical properties on the diameter and the concentration of the Si nanowire of the FETs with a Schottky metal-semiconductor contact has been proposed. I-V characteristics of the nanowire FETs were analytically calculated by using a quantum drift-diffusion current transport model taking into account an equivalent circuit together with the quantum effect of the Si nanowires and a Schottky model at Schottky barriers. The material parameters dependent on different diameters and concentrations of the Si nanowire were numerically estimated from the physical properties of the Si nanowire. The threshold voltage, the mobility, and the doping density of the Si nanowire and the Schottky barrier height at a metal-Si nanowire heterointerface in the nanowire FET were estimated by using the theoretical model.

  9. Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts.

    PubMed

    Li, C H; van 't Erve, O M J; Jonker, B T

    2011-01-01

    The International Technology Roadmap for Semiconductors has identified the electron's spin angular momentum as a new state variable that should be explored as an alternative to the electron's charge for use beyond the size scaling of Moore's Law. A major obstacle has been achieving control of the spin variable at temperatures required for practical applications. Here we demonstrate electrical injection, detection and precession of spin accumulation in silicon, the cornerstone material of device technology, at temperatures that easily exceed these requirements. We observe Hanle precession of electron spin accumulation in silicon for a wide range of bias, show that the magnitude of the Hanle signal agrees well with theory, and that the spin lifetime varies with silicon carrier density. These results confirm spin accumulation in the silicon transport channel to 500 K rather than trapping in localized interface states, and enable utilization of the spin variable in practical device applications.

  10. Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor.

    PubMed

    Trifonov, A S; Presnov, D E; Bozhev, I V; Evplov, D A; Desmaris, V; Krupenin, V A

    2017-08-01

    We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10(-)(3)e/Hz(-1/2) at room temperature. Copyright © 2017 Elsevier B.V. All rights reserved.

  11. Metal-nanocarbon contacts

    NASA Astrophysics Data System (ADS)

    Wilhite, Patrick; Vyas, Anshul A.; Tan, Jason; Tan, Jasper; Yamada, Toshishige; Wang, Phillip; Park, Jeongwon; Yang, Cary Y.

    2014-05-01

    To realize nanocarbons in general and carbon nanotube (CNT) in particular as on-chip interconnect materials, the contact resistance stemming from the metal-CNT interface must be well understood and minimized. Understanding the complex mechanisms at the interface can lead to effective contact resistance reduction. In this study, we compile existing published results and understanding for two metal-CNT contact geometries, sidewall or side contact and end contact, and address key performance characteristics which lead to low contact resistance. Side contacts typically result in contact resistances >1 kΩ, whereas end contacts, such as that for as-grown vertically aligned CNTs on a metal underlayer, can be substantially lower. The lower contact resistance for the latter is due largely to strong bonding between edge carbon atoms with atoms on the metal surface, while carrier transport across a side-contacted interface via tunneling is generally associated with high contact resistance. Analyses of high-resolution images of interface nanostructures for various metal-CNT structures, along with their measured electrical characteristics, provide the necessary knowledge for continuous improvements of techniques to reduce contact resistance. Such contact engineering approach is described for both side and end-contacted structures.

  12. Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism

    NASA Astrophysics Data System (ADS)

    Song, Sungjoo; Kim, Dae-Hyun; Kang, Daesung; Seong, Tae-Yeon

    2016-10-01

    Formation of low-resistance ohmic contacts to p-GaP is important for development of high-efficiency AlGaInP light-emitting diodes (LEDs), which emit light from red to yellow-green and have a wide variety of applications such as traffic light lamps, automobile tail lamps, and in biotherapy. The current flow behavior can be understood by investigating the effect of the Schottky barrier height (SBH; ΦB) on the work function of metals (ΦM). In this work, SBHs and their dependence on ΦM at (001) p-GaP surfaces were investigated. With increasing temperature, the SBH increased, while the ideality factor decreased. This behavior is explained by means of a thermionic field-emission (TFE) model. The SBH and ideal factor ranged from 0.805 eV to 0.852 eV and from 1.18 to 1.50, respectively, for different Schottky metals. The S-parameter (dΦB/dΦM) was estimated to be 0.025, with this approximately zero value implying that the surface Fermi level is virtually perfectly pinned at the surface states at ~0.85 eV above the valence-band edge.

  13. Linearizing the joint torque characteristics of an electric direct-drive robot for high performance control of in-contact operations

    SciTech Connect

    Muir, P.F.

    1992-01-01

    Many robot control algorithms for high performance in-contact operations including hybrid force/position, stiffness control and impedance control approaches require the command of the joint torques. However, most commercially available robots do not provide joint torque command capabilities. The joint command at the user level is typically position or velocity and at the control developer level is voltage current, or pulse-width, and the torque generated is a nonlinear function of the command and joint position. To enable the application of high performance in-contact control algorithms to commercially available robots, and thereby facilitate technology transfer from the robot control research community to commercial applications, a practical methodology has been developed to linearize the torque characteristics of electric motor-amplifier combinations. A four degree-of-freedom Adept 2 robot, having pulse-width modulation amplifiers and both variable reluctance and brushless DC motors, is converted to operate from joint torque commands to demonstrate the methodology. The average percentage torque deviation over the command and position ranges is reduced from as much as 76% to below 5% for the direct-drive joints 1, 2 and 4 and is cut by one half in the remaining ball-screw driven joint 3. 16 refs., 16 figs., 2 tabs.

  14. Real-Space Microscopic Electrical Imaging of n+-p Junction Beneath Front-Side Ag Contact of Multicrystalline Si Solar Cells

    SciTech Connect

    Jiang, C. S.; Li, Z. G.; Moutinho, H. R.; Liang, L.; Ionkin, A.; Al-Jassim, M. M.

    2012-04-15

    We investigated the quality of the n+-p diffused junction beneath the front-side Ag contact of multicrystalline Si solar cells by characterizing the uniformities of electrostatic potential and doping concentration across the junction using the atomic force microscopy-based electrical imaging techniques of scanning Kelvin probe force microscopy and scanning capacitance microscopy. We found that Ag screen-printing metallization fired at the over-fire temperature significantly degrades the junction uniformity beneath the Ag contact grid, whereas metallization at the optimal- and under-fire temperatures does not cause degradation. Ag crystallites with widely distributed sizes were found at the Ag-grid/emitter-Si interface of the over-fired cell, which is associated with the junction damage beneath the Ag grid. Large crystallites protrude into Si deeper than the junction depth. However, the junction was not broken down; instead, it was reformed on the entire front of the crystallite/Si interface. We propose a mechanism of junction-quality degradation, based on emitter Si melting at the temperature around the Ag-Si eutectic point during firing, and subsequent re-crystallization with incorporation of Ag and other impurities and with formation of crystallographic defects during quenching. The effect of this junction damage on solar cell performance is discussed.

  15. Steps toward an all-electric spin valve using side-gated quantum point contacts with lateral spin-orbit coupling

    NASA Astrophysics Data System (ADS)

    Bhandari, Nikhil; Dutta, Maitreya; Charles, James; Newrock, Richard S.; Cahay, Marc; Herbert, Stephen T.

    2013-03-01

    Spin-based electronics or ‘spintronics’ has been a topic of interest for over two decades. Electronic devices based on the manipulation of the electron spin are believed to offer the possibility of very small, non-volatile and ultrafast devices with very low power consumption. Since the proposal of a spin-field-effect transistor (SpinFET) by Datta and Das in 1990, many attempts have been made to achieve spin injection, detection and manipulation in semiconductor materials either by incorporating ferromagnetic materials into device architectures or by using external magnetic fields. This approach has significant design complexities, partly due to the influence of stray magnetic fields on device operation. In addition, magnetic electrodes can have magneto-resistance and spurious Hall voltages that can complicate device performance. To date, there has been no successful report of a working Datta-Das SpinFET. Over the last few years we have investigated an all-electric means of manipulating spins, one that only relies on electric fields and voltages and not on ferromagnetic materials or external magnetic fields. We believe we have found a pathway toward this goal, using in-plane side-gated quantum point contacts (QPCs) that rely on lateral spin-orbit coupling to create spin polarization. In this paper we discuss several aspects of our work, beginning with our finding what we believe is nearly complete spin-polarization in InAs QPCs by purely electrical means, our theoretical work to understand the basic mechanisms leading to that situation (asymmetric lateral confinement, lateral spin-orbit coupling and a strong e-e interaction), and our recent work extending the effort to GaAs and to dual QPC systems where one QPC acts as a polarizer and the other as an analyzer. Keynote talk at the 6th International Workshop on Advanced Materials Science and Nanotechnology, 30 October-2 November 2012, Ha Long, Vietnam.

  16. Electrical and structural properties of tungsten Schottky contacts to p-type InP at different annealing temperatures

    NASA Astrophysics Data System (ADS)

    Rajagopal Reddy, V.; Sri Silpa, D.; Yun, Hyung-Joong; Choi, Chel-Jong

    2014-07-01

    The electrical and structural properties of a fabricated W/p-InP Schottky barrier diode (SBD) have been investigated as a function of annealing temperature. The W/p-InP SBD exhibits good rectification behavior. The barrier height (BH) and ideality factor of the W/p-InP SBD are determined to be 0.82 eV (I-V)/0.98 eV (C-V) and 1.34, respectively. However, the BH is increases to 0.87 eV (I-V)/1.08 eV (C-V) after annealing at 300 °C. When the SBD is annealed at 400 °C, the BH decreases to 0.74 eV (I-V)/0.86 eV (C-V) and the ideality factor increases to 1.45. Results indicate that a maximum BH is obtained on the W/p-InP SBD at 300 °C. Norde method is also employed to determine BHs of W/p-InP SBD which are in good agreement with those estimated by the I-V method. Further, Cheung method is used to estimate the series resistance of the W/p-InP SBD, and the consistency is checked using the Norde method. Besides, the energy distribution of interface state density is determined from the forward bias I-V data at different annealing temperatures. Auger electron spectroscopy and X-ray diffraction studies revealed that the formation of W-P interfacial phases at the W/p-InP interface may be the cause for the increase of BH upon annealing at 300 °C. AFM results indicated that the overall surface morphology of the W/p-InP SBD did not change significantly at elevated temperatures.

  17. Contact hysteroscopy.

    PubMed

    Baggish, M S; Barbot, J

    1983-06-01

    In 1907 innovations in optics and illumination made by Maximilian Nitze were applied to hysteroscopy by Charles David, who wrote a treatise of hysteroscopy. David improved illumination by placing an electric incandescent bulb at the intrauterine end of his endoscope and also sealed the distal end of the tube with a piece of glass. The history of the contact endoscope that the authors personally used is connected to the invention by Vulmiere (1952) of a revolutionary illumination process in endoscopy--the "cold light" process. The components of cold light consist of a powerful external light source that is transmitted via a special optical guide into the endometrial cavity. The 1st application of his principle (1963) was an optical trochar contained in a metallic sheath. This simple endoscope was perfected, and in 1973 Barbot and Parent, in France, began to use it to examine the uterine cavity. Discussion focuses on methods, instrumentation, method for examination (grasping the instrument, setup, light source, anesthesia, dilatation, technique, and normal endometrium); cervical neoplasia; nonneoplastic lesions of the endometrium (endometrial polyp, submucous myoma, endometrial hyperplasia); intrauterine device localization; neoplastic lesions of the endometrium; precursors (adenocarcinoma); hysteroscopy in pregnancy (embryoscopy, hydatidiform mole, postpartum hemorrhage, incomplete abortion, spontaneous abortion, induced abortions, and amnioscopy); and examinations of children and infants. The contact endoscope must make light contact with the structure to be viewed. The principles of contact endoscopy depend on an interpretation of color, contour, vascular pattern, and a sense of touch. These are computed together and a diagnosis is made on the basis of previously learned clinical pathologic correlations. The contact endoscope is composed of 3 parts: an optical guide; a cylindric chamber that collects and traps ambient light; and a magnifying eyepiece. The phase of

  18. The effect of the geometry and material properties of a carbon joint produced by electron beam induced deposition on the electrical resistance of a multiwalled carbon nanotube-to-metal contact interface.

    PubMed

    Rykaczewski, Konrad; Henry, Matthew R; Kim, Song-Kil; Fedorov, Andrei G; Kulkarni, Dhaval; Singamaneni, Srikanth; Tsukruk, Vladimir V

    2010-01-22

    Multiwall carbon nanotubes (MWNTs) are promising candidates for yielding next generation electrical and electronic devices such as interconnects and tips for conductive force microscopy. One of the main challenges in MWNT implementation in such devices is the high contact resistance of the MWNT-metal electrode interface. Electron beam induced deposition (EBID) of an amorphous carbon interface has previously been demonstrated to simultaneously lower the electrical contact resistance and improve the mechanical characteristics of the MWNT-electrode connection. In this work, we investigate the influence of process parameters, such as the electron beam energy, current, geometry, and deposition time, on the EBID-made carbon joint geometry and electrical contact resistance. The influence of the composition of the deposited material on its resistivity is also investigated. The relative importance of each component of the contact resistance and the limiting factor of the overall electrical resistance of a MWNT-based interconnect is determined through a combination of a model analysis and comprehensive experiments.

  19. Behavior of temperature dependent electrical properties of Pd/Au Schottky contact to GaN grown on Si substrate by MBE

    NASA Astrophysics Data System (ADS)

    Singh Nirwal, Varun; Rao Peta, Koteswara

    2016-12-01

    We investigated the effect of temperature on the behavior of electrical properties of Pd/Au Schottky contact to GaN/Si (111) in the temperature range of 125-325 K in steps of 25 K using current-voltage (I-V) and capacitance-voltage (C-V) analysis. The Schottky barrier height (ϕ I-V ) and ideality factor is calculated using standard thermionic emission theory. The value of ϕ I-V was found to increase from 0.41 ± 0.002 eV to 0.79 ± 0.008 eV when temperature varied from 125 to 325 K. The ideality factor of diodes also decreased from 5.91 ± 0.01 to 1.03 ± 0.05 with increase in temperature. The series resistance (R s) is calculated using Cheung’s method and it is observed that the value of R s decreased from 74.40 ± 0.32 Ω to 58.59 ± 0.11 Ω when the temperature increased from 125 to 325 K. Barrier height (ϕ C-V ) and effective carrier concentration (Nd ) is also reported from C-V characteristics as a function of temperature and the value of ϕ C-V was found to decrease with increase in temperature. The behavior of barrier heights obtained from I-V and C-V characteristics is different due to difference in the nature of measurement techniques. The deviation of conventional Richardson’s constant from theoretical value of GaN is due to unusual behavior of temperature dependent electrical properties and barrier inhomogeneity. This is successfully explained by assuming the double Gaussian distribution of inhomogeneous barrier heights of Au/Pd/GaN/Si Schottky diode.

  20. Electrical Burns: First Aid

    MedlinePlus

    ... be caused by a number of sources of electricity, such as lightning, stun guns and contact with ... person who has been injured by contact with electricity should be seen by a doctor. Sometimes an ...

  1. Molecular dynamics simulations of the electrical double layer on smectite surfaces contacting concentrated mixed electrolyte (NaCl-CaCl2)

    SciTech Connect

    Bourg, I.C.; Sposito, G.

    2011-04-01

    We report new molecular dynamics results elucidating the structure of the electrical double layer (EDL) on smectite surfaces contacting mixed NaCl-CaCl{sup 2} electrolyte solutions in the range of concentrations relevant to pore waters in geologic repositories for CO{sub 2} or high-level radioactive waste (0.34-1.83 mol{sub c} dm{sup -3}). Our results confirm the existence of three distinct ion adsorption planes (0-, {beta}-, and d-planes), often assumed in EDL models, but with two important qualifications: (1) the location of the {beta}- and d-planes are independent of ionic strength or ion type and (2) 'indifferent electrolyte' ions can occupy all three planes. Charge inversion occurred in the diffuse ion swarm because of the affinity of the clay surface for CaCl{sup +} ion pairs. Therefore, at concentrations 0.34 mol{sub c} dm{sup -3}, properties arising from long-range electrostatics at interfaces (electrophoresis, electro-osmosis, co-ion exclusion, colloidal aggregation) will not be correctly predicted by most EDL models. Co-ion exclusion, typically neglected by surface speciation models, balanced a large part of the clay mineral structural charge in the more concentrated solutions. Water molecules and ions diffused relatively rapidly even in the first statistical water monolayer, contradicting reports of rigid 'ice-like' structures for water on clay mineral surfaces.

  2. Molecular dynamics simulations of the electrical double layer on smectite surfaces contacting concentrated mixed electrolyte (NaCl-CaCl₂) solutions

    SciTech Connect

    Bourg, Ian C.; Sposito, Garrison

    2011-01-01

    We report new molecular dynamics results elucidating the structure of the electrical double layer (EDL) on smectite surfaces contacting mixed NaCl–CaCl2 electrolyte solutions in the range of concentrations relevant to pore waters in geologic repositories for CO2 or high-level radioactive waste (0.34–1.83 molc dm-3). Our results confirm the existence of three distinct ion adsorption planes (0-, β-, and d-planes), often assumed in EDL models, but with two important qualifications: (1) the location of the β- and d-planes are independent of ionic strength or ion type and (2) “indifferent electrolyte” ions can occupy all three planes. Charge inversion occurred in the diffuse ion swarm because of the affinity of the clay surface for CaCl+ ion pairs. Therefore, at concentrations {>=0.34 molc dm-3}, properties arising from long-range electrostatics at interfaces (electrophoresis, electro-osmosis, co-ion exclusion, colloidal aggregation) will not be correctly predicted by most EDL models. Co-ion exclusion, typically neglected by surface speciation models, balanced a large part of the clay mineral structural charge in the more concentrated solutions. Water molecules and ions diffused relatively rapidly even in the first statistical water monolayer, contradicting reports of rigid “ice-like” structures for water on clay mineral surfaces.

  3. Evidence of waste electrical and electronic equipment (WEEE) relevant substances in polymeric food-contact articles sold on the European market.

    PubMed

    Puype, Franky; Samsonek, Jiří; Knoop, Jan; Egelkraut-Holtus, Marion; Ortlieb, Markus

    2015-01-01

    In order to confirm the possibility that recycled fractions from the waste electrical and electronic equipment (WEEE) stream were illegally entering the European market in black polymeric food-contact articles (FCAs), bromine quantification, brominated flame retardant (BFR) identification combined with WEEE-relevant elemental analysis and polymer impurity analysis were performed. From the 10 selected FCAs, seven samples contained a bromine level ranging from 57 to 5975 mg kg(-)(1), which is lower than expected to achieve flame retardancy. The BFRs that were present were tetrabromobisphenol A (TBBPA), decabromodiphenylether (decaBDE), decabromodiphenylethane (DBDPE) and 1,2-bis(2,4,6-tribromophenoxy)ethane (BTBPE). Typical elements used in electronic equipment and present in WEEE were detected either at trace level or at elevated concentrations. In all cases when bromine was detected at higher concentrations, concurrently antimony was also detected, which confirms the synergetic use of antimony in combination with BFRs. This study describes also the measurement of rare earth elements where combinations of cerium, dysprosium, lanthanum, neodymium, praseodymium and yttrium were detected in four of the seven BFR-positive samples. Additionally, polymer purity was investigated where in all cases foreign polymer fractions were detected. Despite the fact that this study was carried out on a very small amount of samples, there is a significant likelihood that WEEE has been used for the production of FCAs.

  4. Novel method for rapid in-situ hybridization of HER2 using non-contact alternating-current electric-field mixing

    PubMed Central

    Saito, Yoshitaro; Imai, Kazuhiro; Nakamura, Ryuta; Nanjo, Hiroshi; Terata, Kaori; Konno, Hayato; Akagami, Yoichi; Minamiya, Yoshihiro

    2016-01-01

    Human epidermal growth factor receptor 2 (HER2)-targeted agents are an effective approach to treating HER2-positive breast cancer patients. However, the lack of survival benefit in HER2-negative patients as well as the toxic effects and high cost of the drugs highlight the need for accurate and prompt assessment of HER2 status. Our aim was to evaluate the clinical utility of a novel rapid dual in-situ hybridization (RISH) method developed to facilitate hybridization. The method takes advantage of the non-contact mixing effect of an alternating current (AC) electric field. One hundred sixty-three specimens were used from patients diagnosed with primary breast cancers identified immunohistochemically as HER2 0/1(+), (2+) or (3+). The specimens were all tested using conventional dual in-situ hybridization (DISH), DISH with an automated slide stainer, and RISH. With RISH the HER2 test was completed within 6 h, as compared to 20–22 h needed for the standard protocol. Although RISH produced results more promptly using smaller amounts of labeled antibody, the staining and accuracy of HER2 status evaluation with RISH was equal to or greater than with DISH. These results suggest RISH could be used as a clinical tool to promptly determine HER2 status. PMID:27443187

  5. Evidence of waste electrical and electronic equipment (WEEE) relevant substances in polymeric food-contact articles sold on the European market

    PubMed Central

    Puype, Franky; Samsonek, Jiří; Knoop, Jan; Egelkraut-Holtus, Marion; Ortlieb, Markus

    2015-01-01

    In order to confirm the possibility that recycled fractions from the waste electrical and electronic equipment (WEEE) stream were illegally entering the European market in black polymeric food-contact articles (FCAs), bromine quantification, brominated flame retardant (BFR) identification combined with WEEE-relevant elemental analysis and polymer impurity analysis were performed. From the 10 selected FCAs, seven samples contained a bromine level ranging from 57 to 5975 mg kg− 1, which is lower than expected to achieve flame retardancy. The BFRs that were present were tetrabromobisphenol A (TBBPA), decabromodiphenylether (decaBDE), decabromodiphenylethane (DBDPE) and 1,2-bis(2,4,6-tribromophenoxy)ethane (BTBPE). Typical elements used in electronic equipment and present in WEEE were detected either at trace level or at elevated concentrations. In all cases when bromine was detected at higher concentrations, concurrently antimony was also detected, which confirms the synergetic use of antimony in combination with BFRs. This study describes also the measurement of rare earth elements where combinations of cerium, dysprosium, lanthanum, neodymium, praseodymium and yttrium were detected in four of the seven BFR-positive samples. Additionally, polymer purity was investigated where in all cases foreign polymer fractions were detected. Despite the fact that this study was carried out on a very small amount of samples, there is a significant likelihood that WEEE has been used for the production of FCAs. PMID:25599136

  6. Investigation of Electroplated Electrical Contacts

    DTIC Science & Technology

    1979-10-01

    I { COMPUITAT ION ,STRUCTURES’r-- MATHEMA,,rCS AN’t) DEPARMENILOGISTIC’S DEPARFNrIvENT 17____ ~ . 18 I P;OPULSION AND ~i~iP A C O STIC S r .A U X IL IA...Ix. tA th tA .4 13 TABLE 2 - TARNISH FILM THICKNESS ON COPPER CONTROL PANELS Film Removal Panel Average Thickness (Angstroms) Date No. Cuprous Oxide... Cupric Oxide 2/8 1 173 0 3/10 2 625 60 4/11 3 565 118 5/12 4 520 107 6/9 5 577 149 7/7 1966 6 657 149 8/11 7 692 328 9/7 8 857 83 10/14 9 1695 113 11

  7. RF Sputtering of Gold Contacts On Niobium

    NASA Technical Reports Server (NTRS)

    Barr, D. W.

    1983-01-01

    Reliable gold contacts are deposited on niobium by combination of RF sputtering and photolithography. Process results in structures having gold only where desired for electrical contact. Contacts are stable under repeated cycling from room temperature to 4.2 K and show room-temperature contact resistance as much as 40 percent below indium contacts made by thermalcompression bonding.

  8. Method for forming metal contacts

    DOEpatents

    Reddington, Erik; Sutter, Thomas C; Bu, Lujia; Cannon, Alexandra; Habas, Susan E; Curtis, Calvin J; Miedaner, Alexander; Ginley, David S; Van Hest, Marinus Franciscus Antonius Maria

    2013-09-17

    Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating.

  9. Evaluation and optimization of quartz resonant-frequency retuned fork force sensors with high Q factors, and the associated electric circuits, for non-contact atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Ooe, Hiroaki; Fujii, Mikihiro; Tomitori, Masahiko; Arai, Toyoko

    2016-02-01

    High-Q factor retuned fork (RTF) force sensors made from quartz tuning forks, and the electric circuits for the sensors, were evaluated and optimized to improve the performance of non-contact atomic force microscopy (nc-AFM) performed under ultrahigh vacuum (UHV) conditions. To exploit the high Q factor of the RTF sensor, the oscillation of the RTF sensor was excited at its resonant frequency, using a stray capacitance compensation circuit to cancel the excitation signal leaked through the stray capacitor of the sensor. To improve the signal-to-noise (S/N) ratio in the detected signal, a small capacitor was inserted before the input of an operational (OP) amplifier placed in an UHV chamber, which reduced the output noise from the amplifier. A low-noise, wideband OP amplifier produced a superior S/N ratio, compared with a precision OP amplifier. The thermal vibrational density spectra of the RTF sensors were evaluated using the circuit. The RTF sensor with an effective spring constant value as low as 1000 N/m provided a lower minimum detection limit for force differentiation. A nc-AFM image of a Si(111)-7 × 7 surface was produced with atomic resolution using the RTF sensor in a constant frequency shift mode; tunneling current and energy dissipation images with atomic resolution were also simultaneously produced. The high-Q factor RTF sensor showed potential for the high sensitivity of energy dissipation as small as 1 meV/cycle and the high-resolution analysis of non-conservative force interactions.

  10. Evaluation and optimization of quartz resonant-frequency retuned fork force sensors with high Q factors, and the associated electric circuits, for non-contact atomic force microscopy.

    PubMed

    Ooe, Hiroaki; Fujii, Mikihiro; Tomitori, Masahiko; Arai, Toyoko

    2016-02-01

    High-Q factor retuned fork (RTF) force sensors made from quartz tuning forks, and the electric circuits for the sensors, were evaluated and optimized to improve the performance of non-contact atomic force microscopy (nc-AFM) performed under ultrahigh vacuum (UHV) conditions. To exploit the high Q factor of the RTF sensor, the oscillation of the RTF sensor was excited at its resonant frequency, using a stray capacitance compensation circuit to cancel the excitation signal leaked through the stray capacitor of the sensor. To improve the signal-to-noise (S/N) ratio in the detected signal, a small capacitor was inserted before the input of an operational (OP) amplifier placed in an UHV chamber, which reduced the output noise from the amplifier. A low-noise, wideband OP amplifier produced a superior S/N ratio, compared with a precision OP amplifier. The thermal vibrational density spectra of the RTF sensors were evaluated using the circuit. The RTF sensor with an effective spring constant value as low as 1000 N/m provided a lower minimum detection limit for force differentiation. A nc-AFM image of a Si(111)-7 × 7 surface was produced with atomic resolution using the RTF sensor in a constant frequency shift mode; tunneling current and energy dissipation images with atomic resolution were also simultaneously produced. The high-Q factor RTF sensor showed potential for the high sensitivity of energy dissipation as small as 1 meV/cycle and the high-resolution analysis of non-conservative force interactions.

  11. Influence of annealing temperature on the electrical and structural properties of palladium Schottky contacts on n-type 4H-SiC

    NASA Astrophysics Data System (ADS)

    Ramesha, C. K.; Rajagopal Reddy, V.

    2014-12-01

    We have investigated the electrical and structural properties of Pd/4H-SiC Schottky diodes as a function of annealing temperature using I-V, C-V, AES and XRD measurements. The barrier height (BH) of the as-deposited Pd/4H-SiC Schottky diode is found to be 0.71 eV (I-V) and 1.18 eV (C-V), respectively. When the Pd/4H-SiC Schottky diode is annealed at 300 °C, a maximum BH is achieved and corresponding values are 0.89 eV (I-V) and 1.30 eV (C-V). Further, an increase in annealing temperature up to 400 °C, the BH decreases to 0.81 eV (I-V) and 1.20 eV (C-V). Using Cheung's functions, the barrier height (ϕb), ideality factor (n), and series resistance (Rs) are also calculated. Experimental results clearly indicate that the optimum annealing temperature for the Pd Schottky contact to 4H-SiC is 300 °C. According to the Auger electron spectroscopy (AES) and X-ray diffraction (XRD) results, the formation of interfacial phases at the Pd/4H-SiC interface could be the reason for the increase or decrease in BH upon annealing at elevated temperatures. The overall surface morphology of the Pd/4H-SiC Schottky diode is fairly smooth upon annealing temperatures.

  12. Wireless Measurement of Contact and Motion Between Contact Surfaces

    NASA Technical Reports Server (NTRS)

    Woodard, Stanley E.; Taylor, Bryant D.

    2007-01-01

    This method uses a magnetic-field- response contact sensor that is designed to identify surface contact and motion between contact locations. The sensor has three components: (1) a capacitor-inductor circuit with two sets of electrical contact pads, (2) a capacitor with a set of electrical contact pads, and (3) an inductor with a set of electrical contact pads. A unique feature of this sensor is that it is inherently multifunctional. Information can be derived from analyzing such sensor response attributes as amplitude, frequency, and bandwidth. A change in one attribute can be due to a change in a physical property of a system. A change in another attribute can be due to another physical property, which has no relationship to the first one.

  13. Non-contact measurement of contact wire

    NASA Astrophysics Data System (ADS)

    Yi, Yaxing; Ye, Xuemei; Li, Zhongke; Yue, Kaiduan

    2008-12-01

    The overhead contact system is the power supply unit of the electric locomotive. This article is to introduce our newly developed method to measure the height and pull out value of the contact wire. A carema dolly which can move on railway is applied to bear the weight of the measure equipment; two linear CCD cameras are installed on the dolly symmetrically about the midline of two rails. While the dolly move along the railway, two CCD cameras grasp the image synchronously, and a computer real-time process the images, the height and pull out value can be calculate out from the images.

  14. Substantially Oxygen-Free Contact Tube

    NASA Technical Reports Server (NTRS)

    Pike, James F. (Inventor)

    1991-01-01

    A device for arc welding is provided in which a continuously-fed electrode wire is in electrical contact with a contact tube. The contact tube is improved by using a substantially oxygen-free conductive alloy in order to reduce the amount of electrical erosion.

  15. Substantially oxygen-free contact tube

    NASA Technical Reports Server (NTRS)

    Pike, James F. (Inventor)

    1993-01-01

    A device for arc welding is provided in which a continuously-fed electrode wire is in electrical contact with a contact tube. The contact tube is improved by using a substantially oxygen-free conductive alloy in order to reduce the amount of electrical erosion.

  16. A MODIFIED POISSON–BOLTZMANN STUDY OF THE SINGLET ION DISTRIBUTION AT CONTACT WITH THE ELECTRODE FOR A PLANAR ELECTRIC DOUBLE LAYER

    PubMed Central

    Silvestre-Alcantara, Whasington; Bhuiyan, Lutful B.; Outhwaite, Christopher W.; Henderson, Douglas

    2010-01-01

    The properties of the singlet ion distributions at and around contact in a restricted primitive model double layer are characterized in the modified Poisson–Boltzmann theory. Comparisons are made with the corresponding exact Monte Carlo simulation data, the results from the Gouy–Chapman–Stern theory coupled to an exclusion volume term, and the mean spherical approximation. Particular emphasis is given to the behaviour of the theoretical predictions in relation to the contact value theorem involving the charge profile. The simultaneous behaviour of the coion and counterion contact values is also examined. The performance of the modified Poisson–Boltzmann theory in regard to the contact value theorems is very reasonable with the contact characteristics showing semi-quantitative or better agreement overall with the simulation results. The exclusion-volume-treated Gouy–Chapman–Stern theory reveals a fortuitous cancellation of errors, while the mean spherical approximation is poor. PMID:20664814

  17. The benefit of tissue contact monitoring with an electrical coupling index during ablation of typical atrial flutter--a prospective randomised control trial.

    PubMed

    Jones, Michael A; Webster, David; Wong, Kelvin C K; Hayes, Christopher; Qureshi, Norman; Rajappan, Kim; Bashir, Yaver; Betts, Timothy R

    2014-12-01

    We sought to investigate the use of tissue contact monitoring by means of the electrical coupling index (ECI) in a prospective randomised control trial of patients undergoing cavotricuspid isthmus (CTI) ablation for atrial flutter. Patients with ECG-documented typical flutter undergoing their first CTI ablation were randomised to ECI™-guided or non-ECI™-guided ablation. An irrigated-tip ablation catheter was used in all cases. Consecutive 50-W, 60-s radiofrequency lesions were applied to the CTI, from the tricuspid valve to inferior vena cava, with no catheter movement permitted during radiofrequency (RF) delivery. The ablation endpoint was durable CTI block at 20 min post-ablation. Patients underwent routine clinic follow-up post-operatively. A total of 101 patients (79 male), mean age 66 (+/-11), 50 ECI-guided and 51 control cases were enrolled in the study. CTI block was achieved in all. There were no acute complications. All patients were alive at follow-up. CTI block was achieved in a single pass in 36 ECI-guided and 30 control cases (p = 0.16), and at 20 min post-ablation, re-conduction was seen in 5 and 12 cases, respectively (p = 0.07). There was no significant difference in total procedure time (62.7 ± 33 vs. 62.3 ± 33 min, p = 0.92), RF requirement (580 ± 312 vs. 574 ± 287 s, p = 0.11) or fluoroscopy time (718 ± 577 vs. 721 ± 583 s, p = 0.78). After 6 ± 4 months, recurrence of flutter had occurred in 1 (2 %) ECI vs. 8 (16 %) control cases (OR 0.13, 95 % CI 0.01-1.08, p = 0.06). ECI-guided CTI ablation demonstrated a non-statistically significant reduction in late recurrence of atrial flutter, at no cost to procedural time, radiation exposure or RF requirement.

  18. Telocyte's contacts.

    PubMed

    Faussone-Pellegrini, Maria-Simonetta; Gherghiceanu, Mihaela

    2016-07-01

    Telocytes (TC) are an interstitial cell type located in the connective tissue of many organs of humans and laboratory mammals. By means of homocellular contacts, TC build a scaffold whose meshes integrity and continuity are guaranteed by those contacts having a mechanical function; those contacts acting as sites of intercellular communication allow exchanging information and spreading signals. Heterocellular contacts between TC and a great variety of cell types give origin to mixed networks. TC, by means of all these types of contacts, their interaction with the extracellular matrix and their vicinity to nerve endings, are part of an integrated system playing tissue/organ-specific roles.

  19. A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

    NASA Astrophysics Data System (ADS)

    Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

    2011-11-01

    A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, <0.30 V, and the dominance of pure thermionic emission at high voltages, greater than 0.30 V. The resistively evaporated contacts have very low reverse currents of the order of 10-10 A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10-6 A at 1.0 V. Average ideality factors have been determined as (1.43 ± 0.01) and (1.66 ± 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 ± 0.002) eV and (0.624 ± 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, Vo2+.

  20. Non- contacting capacitive diagnostic device

    DOEpatents

    Ellison, Timothy

    2005-07-12

    A non-contacting capacitive diagnostic device includes a pulsed light source for producing an electric field in a semiconductor or photovoltaic device or material to be evaluated and a circuit responsive to the electric field. The circuit is not in physical contact with the device or material being evaluated and produces an electrical signal characteristic of the electric field produced in the device or material. The diagnostic device permits quality control and evaluation of semiconductor or photovoltaic device properties in continuous manufacturing processes.

  1. Dosimetry of infant exposure to power-frequency magnetic fields: variation of 99th percentile induced electric field value by posture and skin-to-skin contact.

    PubMed

    Li, Congsheng; Wu, Tongning

    2015-04-01

    Infant exposure to 50 Hz magnetic fields from power lines was numerically analyzed in this study. Dosimetric variability due to posture and skin-to-skin contact was evaluated using human anatomical models including a recently developed model of a 12-months-old infant. As proposed by the International Commission on Non-Ionizing Radiation Protection, the induced E-field strength (99th percentile value, E99 ) for the central nerve systems (E99_CNS ) and peripheral nerve system (E99_PNS ), were used as metrics. Results showed that the single (free of contact with others) infant model has lower E99 (E99_CNS and E99_PNS inclusive) compared with single adult and child models when exposed to the same power-frequency magnetic field. Also, studied postures of sitting, standing, or arm-up, would not change E99 _PNS . However, skin-to-skin contact with other models could significantly raise induced E-field strength in the infant (e.g., contact on 0.93% of the infant's total surface increased E99_PNS by 213%). Simulations with canonical models were conducted to assess different factors contributing to the E99 enhancement. Results indicated the importance of thoroughly investigating the conservativeness of current safety guidelines in the case of skin-to-skin contact, especially with infants.

  2. Influence of the electrical contact on the reliability of InP-based ridge waveguide distributed feedback semiconductor diode lasers for telecommunications applications

    NASA Astrophysics Data System (ADS)

    Zhang, S.; Boudreau, M. G.; Kuchibhatla, R.; Tao, Y.; Das, S. R.; Griswold, E. M.; Sharma, U.

    2004-05-01

    The design of a ridge waveguide semiconductor diode laser requires the definition of a high-quality metal contact to a p-type semiconductor that has been patterned to form the laser ridge. In the InGaAsP material system, Zn-doped, p-InGaAs is used as the contact layer. An evaporated multilayer metal stack consisting of Ti, Pt, and Au is alloyed to the InGaAs to form a stable ohmic contact with good adhesion. The alloying process is an intermixing of the Ti and As. Pt is not reactive during the alloying process and acts as a diffusion barrier. In this work, the Pt and Ti layer thicknesses were varied to improve the laser reliability. The layer thicknesses were optimized with the goal of producing a minimum stress in the laser active region. A preliminary study of completely processed lasers indicates that the laser reliability is significantly influenced by the changes to the stress induced in the device by the p-contact metal stack. Further work is required to establish the relationship between the stress in the active region of the device, and the stress contribution from the p-contact metal stack. .

  3. Electrical Characterization of Cu Composition Effects in CdS/CdTe Thin-Film Solar Cells with a ZnTe:Cu Back Contact: Preprint

    SciTech Connect

    Li, J. V.; Duenow, J. N.; Kuciauskas, D.; Kanevce, A.; Dhere, R. G.; Young, M. R.; Levi, D. H.

    2012-07-01

    We study the effects of Cu composition on the CdTe/ZnTe:Cu back contact and the bulk CdTe. For the back contact, its potential barrier decreases with Cu concentration while its saturation current density increases. For the bulk CdTe, the hole density increases with Cu concentration. We identify a Cu-related deep level at {approx}0.55 eV whose concentration is significant when the Cu concentration is high. The device performance, which initially increases with Cu concentration then decreases, reflects the interplay between the positive influences and negative influences (increasing deep levels in CdTe) of Cu.

  4. Formation Of Ohmic Gold Contacts On Epitaxial GaAs

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. Doug; Kaiser, William J.

    1991-01-01

    New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.

  5. Novel method for immunofluorescence staining of mammalian eggs using non-contact alternating-current electric-field mixing of microdroplets

    PubMed Central

    Hiromitsu, Shirasawa; Jin, Kumagai; Emiko, Sato; Katsuya, Kabashima; Yukiyo, Kumazawa; Wataru, Sato; Hiroshi, Miura; Ryuta, Nakamura; Hiroshi, Nanjo; Yoshihiro, Minamiya; Yoichi, Akagami; Yukihiro, Terada

    2015-01-01

    Recently, a new technique was developed for non-catalytically mixing microdroplets. In this method, an alternating-current (AC) electric field is used to promote the antigen–antibody reaction within the microdroplet. Previously, this technique has only been applied to histological examinations of flat structures, such as surgical specimens. In this study, we applied this technique for the first time to immunofluorescence staining of three-dimensional structures, specifically, mammalian eggs. We diluted an antibody against microtubules from 1:1,000 to 1:16,000, and compared the chromatic degree and extent of fading across dilutions. In addition, we varied the frequency of AC electric-field mixing from 5 Hz to 46 Hz and evaluated the effect on microtubule staining. Microtubules were more strongly stained after AC electric-field mixing for only 5 minutes, even when the concentration of primary antibody was 10 times lower than in conventional methods. AC electric-field mixing also alleviated microtubule fading. At all frequencies tested, AC electric-field mixing resulted in stronger microtubule staining than in controls. There was no clear difference in a microtubule staining between frequencies. These results suggest that the novel method could reduce antibody consumption and shorten immunofluorescence staining time. PMID:26477850

  6. Exact Analytic Result of Contact Value for the Density in a Modified Poisson-Boltzmann Theory of an Electrical Double Layer.

    PubMed

    Lou, Ping; Lee, Jin Yong

    2009-04-14

    For a simple modified Poisson-Boltzmann (SMPB) theory, taking into account the finite ionic size, we have derived the exact analytic expression for the contact values of the difference profile of the counterion and co-ion, as well as of the sum (density) and product profiles, near a charged planar electrode that is immersed in a binary symmetric electrolyte. In the zero ionic size or dilute limit, these contact values reduce to the contact values of the Poisson-Boltzmann (PB) theory. The analytic results of the SMPB theory, for the difference, sum, and product profiles were compared with the results of the Monte-Carlo (MC) simulations [ Bhuiyan, L. B.; Outhwaite, C. W.; Henderson, D. J. Electroanal. Chem. 2007, 607, 54 ; Bhuiyan, L. B.; Henderson, D. J. Chem. Phys. 2008, 128, 117101 ], as well as of the PB theory. In general, the analytic expression of the SMPB theory gives better agreement with the MC data than the PB theory does. For the difference profile, as the electrode charge increases, the result of the PB theory departs from the MC data, but the SMPB theory still reproduces the MC data quite well, which indicates the importance of including steric effects in modeling diffuse layer properties. As for the product profile, (i) it drops to zero as the electrode charge approaches infinity; (ii) the speed of the drop increases with the ionic size, and these behaviors are in contrast with the predictions of the PB theory, where the product is identically 1.

  7. Contact stress sensor

    DOEpatents

    Kotovsky, Jack

    2014-02-11

    A method for producing a contact stress sensor that includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

  8. Contact stress sensor

    DOEpatents

    Kotovsky, Jack [Oakland, CA

    2012-02-07

    A contact stress sensor includes one or more MEMS fabricated sensor elements, where each sensor element of includes a thin non-recessed portion, a recessed portion and a pressure sensitive element adjacent to the recessed portion. An electric circuit is connected to the pressure sensitive element. The circuit includes a thermal compensator and a pressure signal circuit element configured to provide a signal upon movement of the pressure sensitive element.

  9. Double-tilt in situ TEM holder with multiple electrical contacts and its application in MEMS-based mechanical testing of nanomaterials.

    PubMed

    Bernal, Rodrigo A; Ramachandramoorthy, Rajaprakash; Espinosa, Horacio D

    2015-09-01

    MEMS and other lab-on-a-chip systems are emerging as attractive alternatives to carry out experiments in situ the electron microscope. However, several electrical connections are usually required for operating these setups. Such connectivity is challenging inside the limited space of the TEM side-entry holder. Here, we design, implement and demonstrate a double-tilt TEM holder with capabilities for up to 9 electrical connections, operating in a high-resolution TEM. We describe the operating principle of the tilting and connection mechanisms and the physical implementation of the holder. To demonstrate the holder capabilities, we calibrate the tilting action, which has limits of ±15°, and establish the insulation resistance of the electronics to be 36GΩ, appropriate for measurements of currents down to the nano-amp (nA) regime. Furthermore, we demonstrate tensile testing of silver nanowires using a previously developed MEMS device for mechanical testing, using the implemented holder as the platform for electronic operation and sensing. The implemented holder can potentially have broad application to other areas where MEMS or electrically-actuated setups are used to carry out in situ TEM experiments. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Sinterless Formation Of Contacts On Indium Phosphide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

  11. Sinterless Formation Of Contacts On Indium Phosphide

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.

  12. Contactless Rotary Electrical Couplings

    NASA Technical Reports Server (NTRS)

    Kumagai, Hiroyuki

    2003-01-01

    Rotary electrical couplings based on induction (transformer action) rather than conduction between rotating and stationary circuitry have been invented. These couplings provide an alternative to slip rings and contact brushes. Mechanical imperfections of slip-ring and brush contact surfaces and/or dust particles trapped between these surfaces tend to cause momentary interruptions in electrical contact and thereby give rise to electrical noise. This source of noise can be eliminated in the inductive rotary couplings because no direct contact is necessary for transformer action.

  13. Deposition and electrical, chemical, and microstructural characterization of the interface formed between platinum, gold and silver rectifying contacts on cleaned n-type gallium nitride (0001) surfaces

    NASA Astrophysics Data System (ADS)

    Tracy, Kieran Mark

    2000-10-01

    The characteristics of clean n-type GaN surfaces and the interface between this surface and Pt, Au and Ag, have been investigated. Gallium-terminated (0001) surfaces of GaN, free of carbon and oxygen within the detection limits of XPS have been achieved by annealing in ammonia at 860°C for 15 minutes. Additional, in-situ surface analysis indicated a flat, stoichometric, and unreconstructed surface free of other contaminants. The electron affinity of this surface was 3.1 +/- 0.2 eV. The valence band maximum was located 3.0 +/- 0.1 eV below the Fermi level, indicating the presence of a surface state near the valence band maximum. Individual layers of Pt, Au or Ag were deposited in-situ on the cleaned surface and the interfaces characterized using XPS, UPS, LEED and TEM. All as-deposited meta/GaN interfaces were abrupt and unreacted; the Pt and Au were deposited epitaxially. The Schottky barrier heights obtained from photoemission measurements were 1.2, 0.9 and 0.5 +/- 0.2 eV for Pt, Au and Ag, respectively. Values of the metal work function from UPS results were 5.7, 5.3 and 4.4 +/- 0.2 eV for Pt, Au and Ag, respectively. Schottky barrier heights determined via ex-situ current-voltage measurements were 1.15, 0.88 and 0.56 +/- 0.05 eV for Pt, Au and Ag, respectively. Capacitance-voltage measurements yielded barrier heights of 1.25 and 0.96 +/- 0.05 eV, for Pt and Au, respectively. These results indicate that the Fermi level of the cleaned surface is not pinned. Upon annealing the aforementioned contacts from 400 to 800°C for 3 minutes each. The rectifying behavior of the Pt and Au contacts degraded as a function of temperature during annealing at 400, 600 and 800°C for 3 minutes each until they became ohmic. This was correlated with TEM of the annealed interfaces, which displayed increased chemical reaction and roughening as a function of temperature.

  14. High efficiency wraparound contact solar cells /HEWACS/

    NASA Technical Reports Server (NTRS)

    Gillanders, M.; Opjorden, R.

    1980-01-01

    A cell technology, producing high efficiency wrap-around contact solar cells (HEWACS), with both electrical contacts on the back and AMO conversion efficiencies of almost 15%, is presented. A flow chart indicating the baseline process sequence along with the process changes is given. Tests checking for coating delamination and contact integrity, those measuring contact strength, and thermal cycle tests, successfully demonstrated that this cell technology is ready to be moved to the pilot production stage.

  15. Perforation patterned electrical interconnects

    DOEpatents

    Frey, Jonathan

    2014-01-28

    This disclosure describes systems and methods for increasing the usable surface area of electrical contacts within a device, such as a thin film solid state device, through the implementation of electrically conductive interconnects. Embodiments described herein include the use of a plurality of electrically conductive interconnects that penetrate through a top contact layer, through one or more multiple layers, and into a bottom contact layer. The plurality of conductive interconnects may form horizontal and vertical cross-sectional patterns. The use of lasers to form the plurality of electrically conductive interconnects from reflowed layer material further aids in the manufacturing process of a device.

  16. Hands-on defibrillation: an analysis of electrical current flow through rescuers in direct contact with patients during biphasic external defibrillation.

    PubMed

    Lloyd, Michael S; Heeke, Brian; Walter, Paul F; Langberg, Jonathan J

    2008-05-13

    Brief interruptions in chest compressions reduce the efficacy of resuscitation from cardiac arrest. Interruptions of this type are inevitable during hands-off periods for shock delivery to treat ventricular tachyarrhythmias. The safety of a rescuer remaining in contact with a patient being shocked with modern defibrillation equipment has not been investigated. This study measured the leakage voltage and current through mock rescuers while they were compressing the chests of 43 patients receiving external biphasic shocks. During the shock, the rescuer's gloved hand was pressed onto the skin of the patient's anterior chest. To simulate the worst case of an inadvertent return current pathway, a skin electrode on the rescuers thigh was connected to an electrode on the patient's shoulder. In no cases were shocks perceptible to the rescuer. Peak potential differences between the rescuer's wrist and thigh ranged from 0.28 to 14 V (mean 5.8+/-5.8 V). The average leakage current flowing through the rescuer's body for each phase of the shock waveform was 283+/-140 microA (range 18.9 to 907 microA). This was below several recommended safety standards for leakage current. Rescuers performing chest compressions during biphasic external defibrillation are exposed to low levels of leakage current. The present findings support the feasibility of uninterrupted chest compressions during shock delivery, which may enhance the efficacy of defibrillation and cardiocerebral resuscitation.

  17. Electrical potentials measured on the surface of the knee reflect the changes of the contact force in the knee joint produced by postural sway.

    PubMed

    Zhu, Lin; Garon, Martin; Quenneville, Éric; Buschmann, Michael D; Savard, Pierre

    2017-02-01

    Electroarthrography (EAG) is a novel technique for recording potentials on the knee surface that are generated by the compression of articular cartilage and that reflect both compression force and cartilage quality. The mechanical loading of the knee is achieved by transferring the subject's body weight from a bipedal stance to a unipedal stance. We hypothesized that EAG potentials change with postural sway. The study was performed on 20 normal subjects (10 male, 10 female; age 29±10.5 yrs.; mass 68.8±14.2kg; height 172.6±11.4cm). Data was recorded during 10 successive loading cycles repeated on two different days. During loading, EAG potentials were recorded with 4 electrodes placed on both sides of the knee and the ground reaction force (GRF) and the antero-posterior and medial-lateral displacements of the center of pressure (COP) were measured with a force plate. Two electromechanical models predicting the EAG signal from the GRF alone or from the GRF plus the COP displacements were computed by linear regression. The mean relative error between the four EAG signals and the predicted signals ranged from 24% to 49% for the GRF model, and from 15% to 35% for the GRF+COP model, this reduction was statistically significant at 3 electrode sites (p<0.05). The GRF+COP model also improved the repeatability of the parameters estimated on the first and second days when compared to the GRF model. In conclusion, EAG signals can be predicted by GRF and COP displacements and may reflect changes in the knee contact force due to postural sway. Copyright © 2016 Elsevier B.V. All rights reserved.

  18. Wraparound-contact solar cells

    NASA Technical Reports Server (NTRS)

    Baraona, C. R.; Klucher, T. M.; Thornhill, J. W.; Scott-Monck, J.

    1979-01-01

    Positive and negative electrical contacts are on back surface of wraparound-contact solar cell. With both terminals on nonilluminated side, cells can be connected back-to-back, and interconnection of many cells can be automated by using printed-circuit techniques. Cells are made by screen-printing layer of dielectric around edge of cell and extending top contact over dielectric to back surface. Wraparound also facilitates application of transparent covers and encapsulants. Efficiencies of cells are in excess of seventeen percent.

  19. Prioritized Contact Transport Stream

    NASA Technical Reports Server (NTRS)

    Hunt, Walter Lee, Jr. (Inventor)

    2015-01-01

    A detection process, contact recognition process, classification process, and identification process are applied to raw sensor data to produce an identified contact record set containing one or more identified contact records. A prioritization process is applied to the identified contact record set to assign a contact priority to each contact record in the identified contact record set. Data are removed from the contact records in the identified contact record set based on the contact priorities assigned to those contact records. A first contact stream is produced from the resulting contact records. The first contact stream is streamed in a contact transport stream. The contact transport stream may include and stream additional contact streams. The contact transport stream may be varied dynamically over time based on parameters such as available bandwidth, contact priority, presence/absence of contacts, system state, and configuration parameters.

  20. Types of Contact Lenses

    MedlinePlus

    ... Consumer Devices Consumer Products Contact Lenses Types of Contact Lenses Share Tweet Linkedin Pin it More sharing ... Orthokeratology (Ortho-K) Decorative (Plano) Contact Lenses Soft Contact Lenses Soft contact lenses are made of soft, ...

  1. Towards an optimal contact metal for CNTFETs.

    PubMed

    Fediai, Artem; Ryndyk, Dmitry A; Seifert, Gotthard; Mothes, Sven; Claus, Martin; Schröter, Michael; Cuniberti, Gianaurelio

    2016-05-21

    Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated combination of the Green function formalism and density functional theory to perform an overall ab initio simulation of extended CNT-metal contacts of an arbitrary length (including infinite), a previously not achievable level of simulations. We provide a systematic and comprehensive discussion of metal-CNT contact properties as a function of the metal type and the contact length. We have found and been able to explain very uncommon relations between chemical, physical and electrical properties observed in CNT-metal contacts. The calculated electrical characteristics are in reasonable quantitative agreement and exhibit similar trends as the latest experimental data in terms of: (i) contact resistance for Lc = ∞, (ii) scaling of contact resistance Rc(Lc); (iii) metal-defined polarity of a CNTFET. Our results can guide technology development and contact material selection for downscaling the length of side-contacts below 10 nm.

  2. Crane-Load Contact Sensor

    NASA Technical Reports Server (NTRS)

    Youngquist, Robert; Mata, Carlos; Cox, Robert

    2005-01-01

    An electronic instrument has been developed as a prototype of a portable crane-load contact sensor. Such a sensor could be helpful in an application in which the load rests on a base in a horizontal position determined by vertical alignment pins (see Figure 1). If the crane is not positioned to lift the load precisely vertically, then the load can be expected to swing once it has been lifted clear of the pins. If the load is especially heavy, large, and/or fragile, it could hurt workers and/or damage itself and nearby objects. By indicating whether the load remains in contact with the pins when it has been lifted a fraction of the length of the pins, the crane-load contact sensor helps the crane operator determine whether it is safe to lift the load clear of the pins: If there is contact, then the load is resting against the sides of the pins and, hence, it may not be safe to lift; if contact is occasionally broken, then the load is probably not resting against the pins, so it should be safe to lift. It is assumed that the load and base, or at least the pins and the surfaces of the alignment holes in the load, are electrically conductive, so the instrument can use electrical contact to indicate mechanical contact. However, DC resistance cannot be used as an indicator of contact for the following reasons: The load and the base are both electrically grounded through cables (the load is grounded through the lifting cable of the crane) to prevent discharge of static electricity. In other words, the DC resistance between the load and the pins is always low, as though they were always in direct contact. Therefore, instead of DC resistance, the instrument utilizes the AC electrical impedance between the pins and the load. The signal frequency used in the measurement is high enough (.1 MHz) that the impedance contributed by the cables and the electrical ground network of the building in which the crane and the base are situated is significantly greater than the contact

  3. Edge effect in ohmic contacts on high-resistivity semiconductors

    NASA Astrophysics Data System (ADS)

    Ruzin, Arie

    2016-01-01

    Current increase due to edge effect in ohmic contacts was calculated by finite-element software in three-dimensional devices. The emphasis in this study is on semi-intrinsic (SI) and compensated high resistivity semiconductors. It was found that the enhanced electric field around the contact edges may cause about twofold increase in the total contact current. For contact radii larger than the device thickness and nano scale contacts the impact is considerably reduced. In nanoscale contacts the edge effect does not control the electric field under the entire contact, but rather decreases. The introduction of velocity saturation model has a limited impact, and only in compensated semiconductors.

  4. Contact material optimization and contact physics in metal-contact microelectromechanical systems (MEMS) switches

    NASA Astrophysics Data System (ADS)

    Yang, Zhenyin

    Metal-contact MEMS switches hold great promise for implementing agile radio frequency (RF) systems because of their small size, low fabrication cost, low power consumption, wide operational band, excellent isolation and exceptionally low signal insertion loss. Gold is often utilized as a contact material for metal-contact MEMS switches due to its excellent electrical conductivity and corrosion resistance. However contact wear and stiction are the two major failure modes for these switches due to its material softness and high surface adhesion energy. To strengthen the contact material, pure gold was alloyed with other metal elements. We designed and constructed a new micro-contacting test facility that closely mimic the typical MEMS operation and utilized this facility to efficiently evaluate optimized contact materials. Au-Ni binary alloy system as the candidate contact material for MEMS switches was systematically investigated. A correlation between contact material properties (etc. microstructure, micro-hardness, electrical resistivity, topology, surface structures and composition) and micro-contacting performance was established. It was demonstrated nano-scale graded two-phase Au-Ni film could possibly yield an improved device performance. Gold micro-contact degradation mechanisms were also systematically investigated by running the MEMS switching tests under a wide range of test conditions. According to our quantitative failure analysis, field evaporation could be the dominant failure mode for highfield (> critical threshold field) hot switching; transient thermal-assisted wear could be the dominant failure mode for low-field hot switching; on the other hand, pure mechanical wear and steady current heating (1 mA) caused much less contact degradation in cold switching tests. Results from low-force (50 muN/micro-contact), low current (0.1 mA) tests on real MEMS switches indicated that continuous adsorbed films from ambient air could degrade the switch contact

  5. Ink-Jet Printer Forms Solar-Cell Contacts

    NASA Technical Reports Server (NTRS)

    Alexander, Paul, Jr.; Vest, R. W.; Binford, Don A.; Tweedell, Eric P.

    1988-01-01

    Contacts formed in controllable patterns with metal-based inks. System forms upper metal contact patterns on silicon photovoltaic cells. Uses metallo-organic ink, decomposes when heated, leaving behind metallic, electrically conductive residue in printed area.

  6. Ink-Jet Printer Forms Solar-Cell Contacts

    NASA Technical Reports Server (NTRS)

    Alexander, Paul, Jr.; Vest, R. W.; Binford, Don A.; Tweedell, Eric P.

    1988-01-01

    Contacts formed in controllable patterns with metal-based inks. System forms upper metal contact patterns on silicon photovoltaic cells. Uses metallo-organic ink, decomposes when heated, leaving behind metallic, electrically conductive residue in printed area.

  7. Contact-spring forming machine for flat conductor cable receptacles

    NASA Technical Reports Server (NTRS)

    Angele, W.; Martineck, H. G.

    1968-01-01

    Machine tool produces beryllium-copper contact springs for FCC /flat conductor cable/ feed-through receptacles. The springs are heat-treated and plated to impart the required electrical contact properties.

  8. Towards a generic procedure for the detection of relevant contaminants from waste electric and electronic equipment (WEEE) in plastic food-contact materials: a review and selection of key parameters.

    PubMed

    Puype, Franky; Samsonek, Jiří; Vilímková, Věra; Kopečková, Šárka; Ratiborská, Andrea; Knoop, Jan; Egelkraut-Holtus, Marion; Ortlieb, Markus; Oppermann, Uwe

    2017-10-01

    Recently, traces of brominated flame retardants (BFRs) have been detected in black plastic food-contact materials (FCMs), indicating the presence of recycled plastics, mainly coming from waste electric and electronic equipment (WEEE) as BFRs are one of the main additives in electric applications. In order to evaluate efficiently and preliminary in situ the presence of WEEE in plastic FCMs, a generic procedure for the evaluation of WEEE presence in plastic FCMs by using defined parameters having each an associated importance level has been proposed. This can be achieved by combining parameters like overall bromine (Br) and antimony (Sb) content; additive and reactive BFR, rare earth element (REE) and WEEE-relevant elemental content and additionally polymer purity. In most of the cases, the WEEE contamination could be confirmed by combining X-ray fluorescence (XRF) spectrometry and thermal desorption/pyrolysis gas chromatography-mass spectrometry (GC-MS) at first. The Sb and REE content did not give a full confirmation as to the source of contamination, however for Sb the opposite counts: Sb was joined with elevated Br signals. Therefore, Br at first followed by Sb were used as WEEE precursors as both elements are used as synergetic flame-retardant systems. WEEE-specific REEs could be used for small WEEE (sWEEE) confirmation; however, this parameter should be interpreted with care. The polymer purity by Fourier-transform infrared spectrometer (FTIR) and pyrolysis GC-MS in many cases could not confirm WEEE-specific contamination; however, it can be used for purity measurements and for the suspicion of the usage of recycled fractions (WEEE and non-WEEE) as a third-line confirmation. To the best of our knowledge, the addition of WEEE waste to plastic FCMs is illegal; however, due to lack on screening mechanisms, there is still the breakthrough of such articles onto the market, and, therefore, our generic procedure enables the quick and effective screening of suspicious

  9. Eutectic Contact Inks for Solar Cells

    NASA Technical Reports Server (NTRS)

    Ross, B.

    1985-01-01

    Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

  10. Eutectic Contact Inks for Solar Cells

    NASA Technical Reports Server (NTRS)

    Ross, B.

    1985-01-01

    Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

  11. Quadrupolar contact terms and hyperfine structure

    SciTech Connect

    Karl, G.; Novikov, V. A.

    2006-08-15

    In the interaction of two electric quadrupoles, there is at short range a contact term proportional to the second derivative of a {delta} function. This contact term contributes to the hyperfine splitting of bound states of two particles with spin one or higher -- for example, the bound state of {omega}{sup -} and a nucleus with spin one. The contact hyperfine splitting occurs in states with orbital angular momentum unity (P wave), in contrast to the Fermi contact interaction, which is in S states. We find that these contact splittings will be observable with {omega}{sup -} atoms and help measure the quadrupole moment and charge radius of the hyperon.

  12. Electric Shock Injuries in Children

    MedlinePlus

    ... appliances, or tools are used incorrectly or when electric current makes contact with water in which a child ... sturdy, dry, nonmetallic object that won't conduct electricity. Move the child as little as possible because ...

  13. Transition metal contacts to graphene

    SciTech Connect

    Politou, Maria De Gendt, Stefan; Heyns, Marc; Asselberghs, Inge; Radu, Iuliana; Conard, Thierry; Richard, Olivier; Martens, Koen; Huyghebaert, Cedric; Tokei, Zsolt; Lee, Chang Seung; Sayan, Safak

    2015-10-12

    Achieving low resistance contacts to graphene is a common concern for graphene device performance and hybrid graphene/metal interconnects. In this work, we have used the circular Transfer Length Method (cTLM) to electrically characterize Ag, Au, Ni, Ti, and Pd as contact metals to graphene. The consistency of the obtained results was verified with the characterization of up to 72 cTLM structures per metal. Within our study, the noble metals Au, Ag and Pd, which form a weaker bond with graphene, are shown to result in lower contact resistance (Rc) values compared to the more reactive Ni and Ti. X-ray Photo Electron Spectroscopy and Transmission Electron Microscopy characterization for the latter have shown the formation of Ti and Ni carbides. Graphene/Pd contacts show a distinct intermediate behavior. The weak carbide formation signature and the low Rc values measured agree with theoretical predictions of an intermediate state of weak chemisorption of Pd on graphene.

  14. Improvements To Micro Contact Performance And Reliability

    DTIC Science & Technology

    2016-12-22

    results in a reduction in the variance between predicted vs. observed results by approximately 70%. External factors to micro-contact performance are...overall performance . The variance in contact resistance is the second factor which must be considered. How critical a factor this variance is depends... performance over time. Those external factors that a contact may be exposed to fall into two groups: electrical loading and external circuitry. 39 2.4.1

  15. Complementary Barrier Infrared Detector (CBIRD) Contact Methods

    NASA Technical Reports Server (NTRS)

    Ting, David Z.; Hill, Cory J.; Gunapala, Sarath D.

    2013-01-01

    The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

  16. EDITORIAL: Close contact Close contact

    NASA Astrophysics Data System (ADS)

    Demming, Anna

    2010-07-01

    The development of scanning probe techniques, such as scanning tunnelling microscopy [1], has often been touted as the catalyst for the surge in activity and progress in nanoscale science and technology. Images of nanoscale structural detail have served as an invaluable investigative resource and continue to fascinate with the fantastical reality of an intricate nether world existing all around us, but hidden from view of the naked eye by a disparity in scale. As is so often the case, the invention of the scanning tunnelling microscope heralded far more than just a useful new apparatus, it demonstrated the scope for exploiting the subtleties of electronic contact. The shrinking of electronic devices has been a driving force for research into molecular electronics, in which an understanding of the nature of electronic contact at junctions is crucial. In response, the number of experimental techniques in molecular electronics has increased rapidly in recent years. Scanning tunnelling microscopes have been used to study electron transfer through molecular films on a conducting substrate, and the need to monitor the contact force of scanning tunnelling electrodes led to the use of atomic force microscopy probes coated in a conducting layer as studied by Cui and colleagues in Arizona [2]. In this issue a collaboration of researchers at Delft University and Leiden University in the Netherlands report a new device architecture for the independent mechanical and electrostatic tuning of nanoscale charge transport, which will enable thorough studies of molecular transport in the future [3]. Scanning probes can also be used to pattern surfaces, such as through spatially-localized Suzuki and Heck reactions in chemical scanning probe lithography. Mechanistic aspects of spatially confined Suzuki and Heck chemistry are also reported in this issue by researchers in Oxford [4]. All these developments in molecular electronics fabrication and characterization provide alternative

  17. Electrical conductive composite lubricants

    NASA Astrophysics Data System (ADS)

    Tatarchuk, Bruce J.; Wehrman, Ken A.; Yang Zhang, Teh-Shing Lee, Krishnagopalan, Gopal A.

    1995-01-01

    In power and electronic systems, electrical contact resistance is a major issue. For mechanical connections and sliding contacts, power losses and electrical noise are critical concerns. These issues are of particular interest to all industrial members of the Auburn CCDS. Research has been conducted to develop a variety of contact materials, both for solid lubricant films and composite paper lubricants. A combination of low electrical resistance, good lubricating properties, long wear-life, and low sliding electrical noise was achieved using a metal-cellulose composite paper with dichalcogenide powders entrapped in the porous paper matrix. Advancements in developing these conductive lubricants can increase contact lifetime and reliability in many space and terrestrial applications.

  18. Electric generator

    DOEpatents

    Foster, Jr., John S.; Wilson, James R.; McDonald, Jr., Charles A.

    1983-01-01

    1. In an electrical energy generator, the combination comprising a first elongated annular electrical current conductor having at least one bare surface extending longitudinally and facing radially inwards therein, a second elongated annular electrical current conductor disposed coaxially within said first conductor and having an outer bare surface area extending longitudinally and facing said bare surface of said first conductor, the contiguous coaxial areas of said first and second conductors defining an inductive element, means for applying an electrical current to at least one of said conductors for generating a magnetic field encompassing said inductive element, and explosive charge means disposed concentrically with respect to said conductors including at least the area of said inductive element, said explosive charge means including means disposed to initiate an explosive wave front in said explosive advancing longitudinally along said inductive element, said wave front being effective to progressively deform at least one of said conductors to bring said bare surfaces thereof into electrically conductive contact to progressively reduce the inductance of the inductive element defined by said conductors and transferring explosive energy to said magnetic field effective to generate an electrical potential between undeformed portions of said conductors ahead of said explosive wave front.

  19. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John

    2014-11-04

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  20. Front contact solar cell with formed emitter

    DOEpatents

    Cousins, Peter John [Menlo Park, CA

    2012-07-17

    A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.

  1. Metal contacts to gallium arsenide

    NASA Astrophysics Data System (ADS)

    Baenard, W. O.; Myburg, G.; Auret, F. D.; Goodman, S. A.; Meyer, W. E.

    1996-11-01

    In this paper, some aspects that determine the properties of Schottky and ohmic contacts to GaAs are discussed. For Schottky barrier diodes (SBD), we present results of a comprehensive study involving 41 different metals. We pay special attention to Ru and show that its thermal and chemical stability makes it ideal for use in devices operating above room temperature and for experiments involving annealing. Further, we discuss the effect of different metallization methods on SBD properties and show that methods which use energetic particles, such as electron beam deposition and sputter deposition, often result in inferior SBD properties—the consequence of electrically active defects introduced by the energetic particles at and close to the semiconductor surface. The advantages of using Ru as contact material to GaAs are that it forms high quality, thermally stable Schottky contacts to n-GaAs and thermally stable ohmic contacts with low specific contact resistance to p-GaAs. The versatile applicability of Ru contacts makes them extremely important for future use in devices such as heterojunction bipolar transistors and solid state lasers.

  2. Contact Lenses for Vision Correction

    MedlinePlus

    ... Ophthalmologist Patient Stories Español Eye Health / Glasses & Contacts Contact Lenses Sections Contact Lenses for Vision Correction Contact ... to Know About Contact Lenses Colored Contact Lenses Contact Lenses for Vision Correction Leer en Español: Lentes ...

  3. Heat transport through atomic contacts.

    PubMed

    Mosso, Nico; Drechsler, Ute; Menges, Fabian; Nirmalraj, Peter; Karg, Siegfried; Riel, Heike; Gotsmann, Bernd

    2017-02-06

    Heat transport and dissipation at the nanoscale severely limit the scaling of high-performance electronic devices and circuits. Metallic atomic junctions serve as model systems to probe electrical and thermal transport down to the atomic level as well as quantum effects that occur in one-dimensional (1D) systems. Whereas charge transport in atomic junctions has been studied intensively in the past two decades, heat transport remains poorly characterized because it requires the combination of a high sensitivity to small heat fluxes and the formation of stable atomic contacts. Here we report heat-transfer measurements through atomic junctions and analyse the thermal conductance of single-atom gold contacts at room temperature. Simultaneous measurements of charge and heat transport reveal the proportionality of electrical and thermal conductance, quantized with the respective conductance quanta. This constitutes a verification of the Wiedemann-Franz law at the atomic scale.

  4. Towards an optimal contact metal for CNTFETs

    NASA Astrophysics Data System (ADS)

    Fediai, Artem; Ryndyk, Dmitry A.; Seifert, Gotthard; Mothes, Sven; Claus, Martin; Schröter, Michael; Cuniberti, Gianaurelio

    2016-05-01

    Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at the scale of 10 nm, parameter-free models of electron transport become computationally prohibitively expensive. In our work we used a dedicated combination of the Green function formalism and density functional theory to perform an overall ab initio simulation of extended CNT-metal contacts of an arbitrary length (including infinite), a previously not achievable level of simulations. We provide a systematic and comprehensive discussion of metal-CNT contact properties as a function of the metal type and the contact length. We have found and been able to explain very uncommon relations between chemical, physical and electrical properties observed in CNT-metal contacts. The calculated electrical characteristics are in reasonable quantitative agreement and exhibit similar trends as the latest experimental data in terms of: (i) contact resistance for Lc = ∞, (ii) scaling of contact resistance Rc(Lc); (iii) metal-defined polarity of a CNTFET. Our results can guide technology development and contact material selection for downscaling the length of side-contacts below 10 nm.Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the geometry dependence of the contact resistance. However, at

  5. Ohmic contacts to semiconducting diamond

    NASA Astrophysics Data System (ADS)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  6. High current capacity electrical connector

    DOEpatents

    Bettis, Edward S.; Watts, Harry L.

    1976-01-13

    An electrical connector is provided for coupling high current capacity electrical conductors such as copper busses or the like. The connector is arranged in a "sandwiched" configuration in which a conductor plate contacts the busses along major surfaces thereof clamped between two stainless steel backing plates. The conductor plate is provided with a plurality of contact buttons affixed therein in a spaced array such that the caps of the buttons extend above the conductor plate surface to contact the busses. When clamping bolts provided through openings in the sandwiched arrangement are tightened, Belleville springs provided under the rim of each button cap are compressed and resiliently force the caps into contact with the busses' contacting surfaces to maintain a predetermined electrical contact area provided by the button cap tops. The contact area does not change with changing thermal or mechanical stresses applied to the coupled conductors.

  7. Contact Lens Care

    MedlinePlus

    ... For Consumers Consumer Information by Audience For Women Contact Lens Care Share Tweet Linkedin Pin it More ... 1088, www.fda.gov/medwatch Learn More about Contact Lens Care Other Tips on Contact Lenses Decorative ...

  8. Rolling-Contact Rheostat

    NASA Technical Reports Server (NTRS)

    Ruoff, C. F.

    1985-01-01

    Contact noise in rheostats and potentiometers reduced by rolling contact design. Smooth rolling action eliminates sporadic variations in resistance caused by bouncing and stick/slip motion of conventional sliding contacts.

  9. Integrated electrical connector

    DOEpatents

    Benett, William J.; Ackler, Harold D.

    2005-05-24

    An electrical connector is formed from a sheet of electrically conductive material that lies in between the two layers of nonconducting material that comprise the casing of an electrical chip. The connector is electrically connected to an electrical element embedded within the chip. An opening in the sheet is concentrically aligned with a pair of larger holes respectively bored through the nonconducting layers. The opening is also smaller than the diameter of an electrically conductive contact pin. However, the sheet is composed flexible material so that the opening adapts to the diameter of the pin when the pin is inserted therethrough. The periphery of the opening applies force to the sides of the pin when the pin is inserted, and thus holds the pin within the opening and in contact with the sheet, by friction. The pin can be withdrawn from the connector by applying sufficient axial force.

  10. 46 CFR 113.25-11 - Contact makers.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 46 Shipping 4 2013-10-01 2013-10-01 false Contact makers. 113.25-11 Section 113.25-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-11 Contact makers. Each contact maker must...

  11. 46 CFR 113.25-11 - Contact makers.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 46 Shipping 4 2010-10-01 2010-10-01 false Contact makers. 113.25-11 Section 113.25-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-11 Contact makers. Each contact maker must...

  12. 46 CFR 113.25-11 - Contact makers.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 46 Shipping 4 2012-10-01 2012-10-01 false Contact makers. 113.25-11 Section 113.25-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-11 Contact makers. Each contact maker must...

  13. 46 CFR 113.25-11 - Contact makers.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 46 Shipping 4 2011-10-01 2011-10-01 false Contact makers. 113.25-11 Section 113.25-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-11 Contact makers. Each contact maker must...

  14. 46 CFR 113.25-11 - Contact makers.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 46 Shipping 4 2014-10-01 2014-10-01 false Contact makers. 113.25-11 Section 113.25-11 Shipping COAST GUARD, DEPARTMENT OF HOMELAND SECURITY (CONTINUED) ELECTRICAL ENGINEERING COMMUNICATION AND ALARM SYSTEMS AND EQUIPMENT General Emergency Alarm Systems § 113.25-11 Contact makers. Each contact maker must...

  15. Metal contacts to n-GaN

    NASA Astrophysics Data System (ADS)

    Dobos, L.; Pécz, B.; Tóth, L.; Horváth, Zs. J.; Horváth, Z. E.; Tóth, A.; Horváth, E.; Beaumont, B.; Bougrioua, Z.

    2006-11-01

    Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 °C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 °C. The surface of Au and Ti/Au contacts annealed at 900 °C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused into the n-GaN layer at 900 °C. X-ray diffraction examinations showed, that new Ti 2N, Au 2Ga and Ga 3Ti 2 interface phases formed in Ti/Au contact at 900 °C, new Ti 2N phase formed in Ti/Al contact at 700 and 900 °C, as well as new AlN interface phase developed in Ti/Al contact at 900 °C.

  16. Skin contact electrodes for medical applications.

    PubMed

    Eggins, B R

    1993-04-01

    Skin contact electrodes require electrolyte gels between the skin and the electrode in order to ensure good electrical contact. The effect of different types of electrolyte gel on skin impedance was studied. The main types of gels used were wet gels, karaya-gum based hydrogels and synthetic copolymer-based hydrogels [2-acrylamide-2-methylpropanesulfonic acid-N,N'-methylenebis(acrylamide) copolymers]. The effect of variation in gel composition on the impedance of the skin was investigated.

  17. Oxygen-Free Welding Contact Tips

    NASA Technical Reports Server (NTRS)

    Pike, James F.

    1993-01-01

    Contact tips for gas/metal arc welding (GMAW) fabricated from oxygen-free copper. Prototype tips tested in robotic welding, for which application intended. Reduces electrical erosion, increases electrical conductivity, and reduces mechanical wear. Productivity of robotic welding increases while time during welding interrupted for removal and replacement of contact tips minimal. Improves alignment of joints and filler metal, reducing rate of rejection and repair of unacceptable weldments. Utility extends beyond aerospace industry to mass production of various types of hardware, including heavy off-highway construction equipment.

  18. Better Ohmic Contacts For InP Semiconductor Devices

    NASA Technical Reports Server (NTRS)

    Weizer, Victor G.; Fatemi, Navid S.

    1995-01-01

    Four design modifications enable fabrication of improved ohmic contacts on InP-based semiconductor devices. First modification consists of insertion of layer of gold phosphide between n-doped InP and metal or other overlayer of contact material. Second, includes first modification plus use of particular metal overlayer to achieve very low contact resistivities. Third, also involves deposition of Au(2)P(3) interlayer; in addition, refractory metal (W or Ta) deposited to form contact overlayer. In fourth, contact layer of Auln alloy deposited directly on InP. Improved contacts exhibit low electrical resistances and fabricated without exposing devices to destructive predeposition or postdeposition treatments.

  19. Making End-Bonded Contacts to Carbon Nanotubes

    NASA Astrophysics Data System (ADS)

    Tang, Jianshi; Cao, Qing; Tulevski, George; Han, Shu-Jen

    As a promising candidate for post-Si era, the implementation of carbon nanotube (CNT)-based CMOS technology requires both high-quality channel and electrical contacts that can be scaled down to sub-10 nm. In the efforts of making scalable contacts to CNT, we have recently demonstrated low-resistance end-bonded carbide contacts, formed by the reaction of Mo with CNT through high-temperature annealing (>800 oC). Such end-bonded contact scheme leads to a size-independent contact resistance of about 30 kilo-ohms, which overcomes the scaling limit of conventional side contacts. In this talk, we will present another strategy to make end-bonded contacts to CNTs through thermal annealing at much lower temperatures (400-600 oC). The contact metals are carefully chosen to have a high carbon solubility, so that the carbon atoms could dissolve into the contacts to inherently form end-bonded contacts. Experimental results, including Raman, SEM, and electrical measurements, with different annealing temperatures will be presented. The length-dependent contact resistance for this new end-bonded contact will be evaluated and compared with that of conventional side contact and also end-bonded carbide contact.

  20. A space-compatible angular contact encoder

    NASA Astrophysics Data System (ADS)

    Flew, A. R.

    1985-12-01

    An electromechanical digital position encoder, based on existing commercial technology, for spacecraft applications is described. The device contains electrical wiping contacts, a gear mechanism, and plain and rolling-element bearings all operating without wet lubrication. Designed to function continuously for 10 years, certain contacts will perform in excess of 20 million cycles. To investigate the performance of these contacts, automatic test equipment was designed to monitor the accuracy of 8192 separate output conditions on a regular basis throughout an accelerated-life thermal vacuum test. The equipment also checks for missing bits and edge noise and logs any errors that are found.

  1. Particle trap to sheath contact for a gas-insulated transmission line having a corrugated outer conductor

    DOEpatents

    Fischer, William H.; Cookson, Alan H.; Yoon, Kue H.

    1984-04-10

    A particle trap to outer elongated conductor or sheath contact for gas-insulated transmission lines. The particle trap to outer sheath contact of the invention is applicable to gas-insulated transmission lines having either corrugated or non-corrugated outer sheaths. The contact of the invention includes an electrical contact disposed on a lever arm which in turn is rotatably disposed on the particle trap and biased in a direction to maintain contact between the electrical contact and the outer sheath.

  2. Contact Lens Risks

    MedlinePlus

    ... contact lenses to any water: tap, bottled, distilled, lake or ocean water. Never use non-sterile water ( ... from bacteria in swimming pool water, hot tubs, lakes and the ocean Replace your contact lens storage ...

  3. Contact Us about Asbestos

    EPA Pesticide Factsheets

    How to contact EPA for more information on asbestos, including state and regional contacts, EPA’s Asbestos Abatement/Management Ombudsman and the Toxic Substances Control Act (TSCA) Assistance Information Service (TSCA Hotline).

  4. Contact resistance prediction and structure optimization of bipolar plates

    NASA Astrophysics Data System (ADS)

    Zhou, P.; Wu, C. W.; Ma, G. J.

    The objective of this work is to investigate the effect of clamping force on the interfacial contact resistance and the porosity of the gas diffusion layer (GDL) in a proton exchange membrane fuel cell (PEMFC). An optimal rib shape for the bipolar plate is developed to analyze the electrical contact resistance. We found that the electrical contact resistance is determined by both the clamping force and the contact pressure distribution. A minimum contact resistance can be obtained in the case of a constant contact pressure distribution. The porosity of the GDLs underneath the rib of the bipolar plate decreases with increasing the clamping force, and the void volume is changed with the deformation of the GDLs. It is found that there exists an optimal rib width of the bipolar plates to obtain a reasonable combination of low interfacial contact resistance and good porosity for the GDL.

  5. Glasses and Contact Lenses

    MedlinePlus

    ... Real Lifesaver Kids Talk About: Coaches Glasses and Contact Lenses KidsHealth > For Kids > Glasses and Contact Lenses Print A A A What's in this ... together the way they should. But eyeglasses or contact lenses, also called corrective lenses, can help most ...

  6. Contact Lenses on Submarines

    DTIC Science & Technology

    2014-09-26

    NAVAL SUBMARINE MEDICAL RESEARCH LABORATORY SUBMARINE BASE, GROTON, CONN. REPORT NUMBER 1048 CONTACT LENSES ON SUBMARINES... CONTACT LENSES ON SUBMARINES by James F. Socks, CDR, MSC, USN NAVAL SUBMARINE MEDICAL RESEARCH LABORATORY REPORT NUMBER 1048 NAVAL MEDICAL RESEARCH...DRSCHLAB Approved for public release; distribution unlimited SUMMARY PAGE PROBLEM To determine the feasibility of wearing contact lenses aboard

  7. Contact mechanisms and design principles for Schottky contacts to group-III nitrides

    NASA Astrophysics Data System (ADS)

    Mohammad, S. Noor

    2005-03-01

    Contact mechanisms and design principles for Schottky contacts to group-III nitrides have been studied. These contacts, made generally by using simple principles and past experiences, suffer from serious drawbacks. The importance of various parameters such as surface morphology, surface treatment, metal/semiconductor interactions at the interface, thermal stability, minimization of doping by metal deposition and etching, elimination of edge electric field, etc., for them has been thoroughly investigated. Several design principles have been proposed. Both theoretical and experimental data have been presented to justify the validity of the proposed contact mechanisms and design principles. While theoretical calculations provide fundamental physics underlying heavy doping, leakage, etc., the experimental data provide verification of the contact mechanisms and design principles. The proposed principles are general enough to be applicable to most, if not all, Schottky contacts.

  8. 76 FR 59667 - Electricity Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-09-27

    ... Electricity Advisory Committee AGENCY: Office of Electricity Delivery and Energy Reliability, Department of Energy. ACTION: Notice of open meeting. SUMMARY: This notice announces a meeting of the Electricity... CONTACT: David Meyer, Office of Electricity Delivery and Energy Reliability, U.S. Department of...

  9. 78 FR 77443 - Electricity Advisory Committee

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-23

    ... Electricity Advisory Committee AGENCY: Office of Electricity Delivery and Energy Reliability, Department of... Electricity Advisory Committee (EAC). The Federal Advisory Committee Act (Pub. L. 92-463, 86 Stat. 770.../oe/services/electricity-advisory-committee-eac . FOR FURTHER INFORMATION CONTACT: Matthew...

  10. Contact lens in keratoconus

    PubMed Central

    Rathi, Varsha M; Mandathara, Preeji S; Dumpati, Srikanth

    2013-01-01

    Contact lenses are required for the visual improvement in patients with keratoconus. Various contact lens options, such as rigid gas permeable (RGP) lenses, soft and soft toric lenses, piggy back contact lenses (PBCL), hybrid lenses and scleral lenses are availble. This article discusses about selection of a lens depending on the type of keratoconus and the fitting philosophies of various contact lenses including the starting trial lens. A Medline search was carried out for articles in the English language with the keywords keratoconus and various contact lenses such as Rose k lens, RGP lens, hybrid lens, scleral lens and PBCL. PMID:23925325

  11. 7 CFR 1710.400 - Initial contact.

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... AGRICULTURE GENERAL AND PRE-LOAN POLICIES AND PROCEDURES COMMON TO ELECTRIC LOANS AND GUARANTEES Application... Department of Agriculture, Washington, DC 20250-1500. A field or headquarters staff representative may be... outstanding loans should contact their assigned RUS general field representative (GFR) or, in the case of a...

  12. Properties of bilayer contacts to porous silicon

    NASA Astrophysics Data System (ADS)

    Gallach, D.; Torres-Costa, V.; García-Pelayo, L.; Climent-Font, A.; Martín-Palma, R. J.; Barreiros-das-Santos, M.; Sporer, C.; Samitier, J.; Manso, M.

    2012-05-01

    The aim of the present work is the growth by PVD techniques and ulterior characterization of electrical contacts to columnar porous silicon (PSi) as an approach to reliable PSi sensor devices. Contacts consist of a NiCr (40:60) and Au bilayer on the PSi surface deposited by magnetron sputtering. These structures show a good adhesion to the rough surface of columnar PSi. The morphology of these electrical contacts is characterized by electron microscopy and their crystalline structure by X-ray diffraction. Compositional profiles are determined by Rutherford backscattering spectroscopy and energy dispersive X-ray spectroscopy, which demonstrate that the infiltration of NiCr into the PSi is at the origin of the metallic thin film adhesion improvement. I- V characteristics and impedance spectroscopy measurements show that this configuration provides rectifying electrical contacts to PSi, for which a simple equivalent circuit based on one resistor and two capacitors can be modeled. These results further support the use of PSi electrical structures for sensing purposes.

  13. A rotating electrical transfer device

    NASA Technical Reports Server (NTRS)

    Porter, R. S.

    1985-01-01

    The design, development, and performance characteristics of two roll ring configurations - a roll ring being a device used in transferring electrical energy across a continuously rotating or oscillating interface through one or more flexible rolling contacts, or flexures are described. Emphasis is placed on the design problems and solutions encountered during development in the areas of flexure fatigue, contact electroplating, electrical noise, and control of interface geometry. Also, the present status of each configuration is summarized.

  14. Fretting Wear Behavior of Tin Plated Contacts:. Influence on Contact Resistance

    NASA Astrophysics Data System (ADS)

    Park, Young Woo; Sankara Narayanan, T. S. N.; Lee, Kang Yong

    The fretting wear behavior of tin plated copper alloy contacts and its influence on the contact resistance are addressed in this paper. Based on the change in the area of contact zone as well as the wear depth as a function of fretting cycles, a model was proposed to explain the observed low and stable contact resistance. The extent of wear of tin coating and the formation of wear debris as a function of fretting cycles were assessed by scanning electron microscopy (SEM). Energy dispersive X-ray line scanning (EDX), X-ray mapping, and EDX spot analysis were employed to characterize the nature of changes that occur at the contact zone. The study reveals that the fretted area increases linearly up to 8000 cycles due to the continuous removal of the tin coating and attains saturation when the fretting path length reaches a maximum. The observed low and stable contact resistance observed up to 8000 cycles is due to the common area of contact which provides an electrically conducting area. Surface analysis by SEM, EDX, and X-ray elemental mapping elucidate the nature of changes that occurred at the contact zone. Based on the change in contact resistance as a function of fretting cycles, the fretting wear and fretting corrosion dominant regimes are proposed. The interdependence of extent of wear and oxidation increases the complexity of the fretting corrosion behavior of tin plated contacts.

  15. A reliable all-silver front contact for silicon solar cells

    NASA Technical Reports Server (NTRS)

    Lamneck, J. H., Jr.; Schwartz, L.

    1972-01-01

    The feasibility of making an adherent and moisture degradation resistant silver-only front contact to silicon solar cells was demonstrated. Optimum fabrication processes and process sequences were determined for making such contacts. These contacts were found to also have good electrical characteristics. A back contact of aluminum-silver was also developed. This proved very satisfactory for low-temperature applications.

  16. Single exposure contacts are dead. Long live single exposure contacts!

    NASA Astrophysics Data System (ADS)

    Haffner, Henning; Ostermayr, Martin; Kanai, Hideki; Chang, Chan Sam; Morgenfeld, Bradley; An, Jujin; Luo, Meng; Zhuang, Haoren

    2011-04-01

    The paper describes a process/design co-optimization effort based on an SRAM design to enable a single exposure contact process for the 28nm technology half node. As a start, a change to the wiring concept of the standard SRAM design was implemented. The resulting individual contact layer elements may seem even more resolution critical to the casual observer. But in reality, the flexibility for source-mask optimization had been significantly improved. In a second step, wafer targets and mask dimension options (using various kinds of OPC methods and SRAF strategies) were run through several optimization iterations. This included interlevel considerations due to stringent overlap requirements. Several promising SRAM design as well as mask options were identified and experimentally verified to finally converge to an optimum mask and wafer target layout. Said optimum solution still supports an automated OPC approach using standard EDA tools and off the shelf OPC strategies. In a last step, a 1Mbit electrically testable SRAM was designed and manufactured together with alternative SRAM designs and process options. After explaining the changes to the wiring of the SRAM design, the paper discusses in great detail various mask optimization solutions and their consequences on wafer target and printability. Simulation and experimental results are compared and the concluding optimized solution is explained. Furthermore, some key lithography and etch process elements that became the single exposure process enabler are explained in more detail. Finally, the paper will take a look at electrical results of the 1Mbit electrically testable SRAM as the ultimate proof of concept.

  17. [Immunology of contact allergy].

    PubMed

    Martin, S F

    2011-10-01

    Contact allergy is a skin disease that is caused by the reaction of the immune system to low molecular weight chemicals. A hallmark of contact allergens is their chemical reactivity, which is not exhibited by toxic irritants. Covalent binding of contact allergens to or complex formation with proteins is essential for the activation of the immune system. As a consequence antigenic epitopes are formed, which are recognized by contact allergen-specific T cells. The generation of effector and memory T cells causes the high antigen specificity and the repeated antigen-specific skin reaction of contact allergy. New findings reveal that the less specific reaction of the innate immune system to contact allergens closely resembles the reaction to an infection. Therefore, contact allergy can be viewed as an immunologic misunderstanding since the skin contact with chemical allergens is interpreted as an infection. The growing understanding of the molecular and cellular pathologic mechanisms of contact allergy can aid the development of specific therapies and of in vitro alternatives to animal testing for the identification of contact allergens.

  18. Active alignment/contact verification system

    DOEpatents

    Greenbaum, William M.

    2000-01-01

    A system involving an active (i.e. electrical) technique for the verification of: 1) close tolerance mechanical alignment between two component, and 2) electrical contact between mating through an elastomeric interface. For example, the two components may be an alumina carrier and a printed circuit board, two mating parts that are extremely small, high density parts and require alignment within a fraction of a mil, as well as a specified interface point of engagement between the parts. The system comprises pairs of conductive structures defined in the surfaces layers of the alumina carrier and the printed circuit board, for example. The first pair of conductive structures relate to item (1) above and permit alignment verification between mating parts. The second pair of conductive structures relate to item (2) above and permit verification of electrical contact between mating parts.

  19. Reliable aluminum contact formation by electrostatic bonding

    NASA Astrophysics Data System (ADS)

    Kárpáti, T.; Pap, A. E.; Radnóczi, Gy; Beke, B.; Bársony, I.; Fürjes, P.

    2015-07-01

    The paper presents a detailed study of a reliable method developed for aluminum fusion wafer bonding assisted by the electrostatic force evolving during the anodic bonding process. The IC-compatible procedure described allows the parallel formation of electrical and mechanical contacts, facilitating a reliable packaging of electromechanical systems with backside electrical contacts. This fusion bonding method supports the fabrication of complex microelectromechanical systems (MEMS) and micro-opto-electromechanical systems (MOEMS) structures with enhanced temperature stability, which is crucial in mechanical sensor applications such as pressure or force sensors. Due to the applied electrical potential of  -1000 V the Al metal layers are compressed by electrostatic force, and at the bonding temperature of 450 °C intermetallic diffusion causes aluminum ions to migrate between metal layers.

  20. Indium Ohmic Contacts to n-ZnSe,

    DTIC Science & Technology

    ELECTRIC CONTACTS, ANNEALING, AUGER ELECTRON SPECTROSCOPY , BACKSCATTERING, CHLORINE, DIFFRACTION, ELECTRON SPECTROSCOPY , FUNCTIONS, INDIUM... PHOTOELECTRONS , PURITY, RESISTANCE, TEMPERATURE, TEST AND EVALUATION, X RAY DIFFRACTION, MOLECULAR BEAMS, EPITAXIAL GROWTH, ZINC SELENIDES, DOPING.

  1. From point contacts to spin-transfer torque

    NASA Astrophysics Data System (ADS)

    Tsoi, Maxim

    2013-03-01

    Point contacts - nanoscale electrical contacts between conductors - have been around for decades and proved to be unique experimental tools for studying the electronic transport properties of metals. Following the theoretical prediction of spin-transfer torque (STT) by John Slonczewski and Luc Berger, point contacts were instrumental for the first experimental demonstration of STT in spin-valve multilayers, thanks to extremely high current densities routinely produced in such contacts. In this talk I will briefly review the point-contact technique and its contributions to the field of current-induced control over magnetic nanostructures. M.T. is supported in part by NSF grant DMR-1207577

  2. [Periorbital contact eczema].

    PubMed

    Worm, M; Sterry, W

    2005-11-01

    Periorbital contact eczema is most commonly the result of an allergic contact dermatitis whereas other eczematous skin diseases like atopic eczema or seborrheic eczema occur less frequently. Also, other diseases like autoimmune disorders or rosacea need to be considered. Allergic contact dermatitis is a T-cell-mediated immunological response towards ubiquitous contact allergens. Activated T-cells migrate through the vessels into the skin and produce several inflammatory mediators. Epicutaneous patch testing is an important tool for the diagnosis of contact allergy whereby the allergens are analysed in terms of their ability to induce eczematous skin reaction. Until now the short-term use of corticosteroids are is employed for the treatment of allergic contact eczema. Modern substances with an optimal therapeutic index should rather be used.

  3. Contact Relations with Applications

    NASA Astrophysics Data System (ADS)

    Schmidt, Gunther; Berghammer, Rudolf

    Using relation algebra, we generalize Aumann’s notion of a contact relation and that of a closure operation from powersets to general membership relations and their induced partial orders. We also investigate the relationship between contacts and closures in this general setting and use contacts to establish a one-to-one correspondence between the column space and the row space of a relation.

  4. Contact angle hysteresis explained.

    PubMed

    Gao, Lichao; McCarthy, Thomas J

    2006-07-04

    A view of contact angle hysteresis from the perspectives of the three-phase contact line and of the kinetics of contact line motion is given. Arguments are made that advancing and receding are discrete events that have different activation energies. That hysteresis can be quantified as an activation energy by the changes in interfacial area is argued. That this is an appropriate way of viewing hysteresis is demonstrated with examples.

  5. Soft contact lenses

    PubMed Central

    Sutherland, R. L.; VanLeeuwen, Wm. N.

    1972-01-01

    A series of 55 patients were fitted with a new type of hydrophilic soft contact lens. These were found more comfortable than hard contact lenses and they had a protective and pain-relieving action in cases of chronic corneal disease. Vision was not as good as with hard contact lenses and a greater potential danger of infection was found. They are preferred by many patients despite the noticeable thick edge and the difficulty of obtaining an identical replacement. PMID:5042887

  6. Optical contact micrometer

    DOEpatents

    Jacobson, Steven D.

    2014-08-19

    Certain examples provide optical contact micrometers and methods of use. An example optical contact micrometer includes a pair of opposable lenses to receive an object and immobilize the object in a position. The example optical contact micrometer includes a pair of opposable mirrors positioned with respect to the pair of lenses to facilitate viewing of the object through the lenses. The example optical contact micrometer includes a microscope to facilitate viewing of the object through the lenses via the mirrors; and an interferometer to obtain one or more measurements of the object.

  7. Colors and contact dermatitis.

    PubMed

    Bonamonte, Domenico; Foti, Caterina; Romita, Paolo; Vestita, Michelangelo; Angelini, Gianni

    2014-01-01

    The diagnosis of skin diseases relies on several clinical signs, among which color is of paramount importance. In this review, we consider certain clinical presentations of both eczematous and noneczematous contact dermatitis in which color plays a peculiar role orientating toward the right diagnosis. The conditions that will be discussed include specific clinical-morphologic subtypes of eczematous contact dermatitis, primary melanocytic, and nonmelanocytic contact hyperchromia, black dermographism, contact chemical leukoderma, and others. Based on the physical, chemical, and biologic factors underlying a healthy skin color, the various skin shades drawing a disease picture are thoroughly debated, stressing their etiopathogenic origins and histopathologic aspects.

  8. Thermal Stability of Magnesium Silicide/Nickel Contacts

    NASA Astrophysics Data System (ADS)

    de Boor, J.; Droste, D.; Schneider, C.; Janek, J.; Mueller, E.

    2016-10-01

    Magnesium silicide-based materials are a very promising class of thermoelectric materials with excellent potential for thermoelectric waste heat recovery. For the successful application of magnesium silicide-based thermoelectric generators, the development of long-term stable contacts with low contact resistance is as important as material optimization. We have therefore studied the suitability of Ni as a contact material for magnesium silicide. Co-sintering of magnesium silicide and Ni leads to the formation of a stable reaction layer with low electrical resistance. In this paper we show that the contacts retain their low electrical contact resistance after annealing at temperatures up to 823 K for up to 168 h. By employing scanning electron microscope analysis and time-of-flight (ToF)-secondary ion mass spectrometry, we can further show that elemental diffusion is occurring to a very limited extent. This indicates long-term stability under practical operation conditions for magnesium silicide/nickel contacts.

  9. Atomically Thin Ohmic Edge Contacts Between Two-Dimensional Materials.

    PubMed

    Guimarães, Marcos H D; Gao, Hui; Han, Yimo; Kang, Kibum; Xie, Saien; Kim, Cheol-Joo; Muller, David A; Ralph, Daniel C; Park, Jiwoong

    2016-06-28

    With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance. This is especially problematic for monolayers of semiconducting transition-metal dichalcogenides (TMDs), which are promising candidates for atomically thin electronics. Ideal electrical contacts to them would require the use of similarly thin electrode materials while maintaining low contact resistances. Here we report a scalable method to fabricate ohmic graphene edge contacts to two representative monolayer TMDs, MoS2 and WS2. The graphene and TMD layer are laterally connected with wafer-scale homogeneity, no observable overlap or gap, and a low average contact resistance of 30 kΩ·μm. The resulting graphene edge contacts show linear current-voltage (I-V) characteristics at room temperature, with ohmic behavior maintained down to liquid helium temperatures.

  10. Physically separating printed circuit boards with a resilient, conductive contact

    NASA Technical Reports Server (NTRS)

    Baker, John D. (Inventor); Montalvo, Alberto (Inventor)

    1999-01-01

    A multi-board module provides high density electronic packaging in which multiple printed circuit boards are stacked. Electrical power, or signals, are conducted between the boards through a resilient contact. One end of the contact is located at a via in the lower circuit board and soldered to a pad near the via. The top surface of the contact rests against a via of the facing printed circuit board.

  11. Resistivity of Rotated Graphite-Graphene Contacts.

    PubMed

    Chari, Tarun; Ribeiro-Palau, Rebeca; Dean, Cory R; Shepard, Kenneth

    2016-07-13

    Robust electrical contact of bulk conductors to two-dimensional (2D) material, such as graphene, is critical to the use of these 2D materials in practical electronic devices. Typical metallic contacts to graphene, whether edge or areal, yield a resistivity of no better than 100 Ω μm but are typically >10 kΩ μm. In this Letter, we employ single-crystal graphite for the bulk contact to graphene instead of conventional metals. The graphite contacts exhibit a transfer length up to four-times longer than in conventional metallic contacts. Furthermore, we are able to drive the contact resistivity to as little as 6.6 Ω μm(2) by tuning the relative orientation of the graphite and graphene crystals. We find that the contact resistivity exhibits a 60° periodicity corresponding to crystal symmetry with additional sharp decreases around 22° and 39°, which are among the commensurate angles of twisted bilayer graphene.

  12. Electrical safety device

    DOEpatents

    White, David B.

    1991-01-01

    An electrical safety device for use in power tools that is designed to automatically discontinue operation of the power tool upon physical contact of the tool with a concealed conductive material. A step down transformer is used to supply the operating power for a disconnect relay and a reset relay. When physical contact is made between the power tool and the conductive material, an electrical circuit through the disconnect relay is completed and the operation of the power tool is automatically interrupted. Once the contact between the tool and conductive material is broken, the power tool can be quickly and easily reactivated by a reset push button activating the reset relay. A remote reset is provided for convenience and efficiency of operation.

  13. A hybrid simulation of contact discontinuity

    NASA Technical Reports Server (NTRS)

    Wu, B. H.; Chao, J. K.; Tsai, W. H.; Lin, Y.; Lee, L. C.

    1994-01-01

    Contact discontinuities in a collisionless plasma are studied by hybrid simulations, in which ions are treated as particles and electrons are considered as a fluid. It is demonstrated that contact discontinuity with a stable density ramp can exist in cases with a finite electron temperature. An electron pressure gradient is present across the contact discontinuity, leading to the presence of a parallel electric field and hence field-aligned potential increase (Delta Phi (sub parallel)) in the transition region. By reflecting ions at the discontinuity, this parallel electric potential peak reduces the interpenetration between hot and cold ions and maintains a stable density ramp across the contact discontinuity. The ratio of the field-aligned electric potential energy to ion thermal energy, e(Delta) Phi(sub parallel)/kT(sub i), is found to be an increasing function of T(sub e)/T(sub i), where T(sub e) and T(sub i) are respectively the electron and ion temperature.

  14. Semiconductor ohmic contact

    NASA Technical Reports Server (NTRS)

    Hawrylo, F. Z.; Kressel, H.

    1977-01-01

    Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.

  15. Factor XII Contact Activation.

    PubMed

    Naudin, Clément; Burillo, Elena; Blankenberg, Stefan; Butler, Lynn; Renné, Thomas

    2017-03-27

    Contact activation is the surface-induced conversion of factor XII (FXII) zymogen to the serine protease FXIIa. Blood-circulating FXII binds to negatively charged surfaces and this contact to surfaces triggers a conformational change in the zymogen inducing autoactivation. Several surfaces that have the capacity for initiating FXII contact activation have been identified, including misfolded protein aggregates, collagen, nucleic acids, and platelet and microbial polyphosphate. Activated FXII initiates the proinflammatory kallikrein-kinin system and the intrinsic coagulation pathway, leading to formation of bradykinin and thrombin, respectively. FXII contact activation is well characterized in vitro and provides the mechanistic basis for the diagnostic clotting assay, activated partial thromboplastin time. However, only in the past decade has the critical role of FXII contact activation in pathological thrombosis been appreciated. While defective FXII contact activation provides thromboprotection, excess activation underlies the swelling disorder hereditary angioedema type III. This review provides an overview of the molecular basis of FXII contact activation and FXII contact activation-associated disease states.

  16. Noneczematous Contact Dermatitis

    PubMed Central

    Foti, Caterina; Vestita, Michelangelo; Angelini, Gianni

    2013-01-01

    Irritant or allergic contact dermatitis usually presents as an eczematous process, clinically characterized by erythematoedematovesicous lesions with intense itching in the acute phase. Such manifestations become erythematous-scaly as the condition progresses to the subacute phase and papular-hyperkeratotic in the chronic phase. Not infrequently, however, contact dermatitis presents with noneczematous features. The reasons underlying this clinical polymorphism lie in the different noxae and contact modalities, as well as in the individual susceptibility and the various targeted cutaneous structures. The most represented forms of non-eczematous contact dermatitis include the erythema multiforme-like, the purpuric, the lichenoid, and the pigmented kinds. These clinical entities must obviously be discerned from the corresponding “pure” dermatitis, which are not associated with contact with exogenous agents. PMID:24109520

  17. Effects of oxidation and roughness on Cu contact resistance from 4 to 290 K

    NASA Technical Reports Server (NTRS)

    Nilles, M. J.; Van Sciver, S. W.

    1988-01-01

    Knowledge of the factors influencing contact resistance is important for optimizing system design in cryogenic applications. In space cryogenics, indirect cooling of infrared components is the primary concern. The presence of bolted joints results in contact resistances which can dominate all other contributions to the overall heat transfer rate. Here, thermal and electrical contact resistances measured between 4 K and 290 K for a series of bolted OFHC Cu contacts are reported. Surface roughness is found to have little effect on the overall contact resistance within the experimental limits, while oxidation can increase the contact resistance by as much as a factor of 100. Thermal and electrical contact resistances measured on the same contact show that the contact resistance temperature dependence does not follow the bulk dependence. For example, the residual resistance ratio (RRR) of the OFHC Cu is 110, but for contacts made from this material, the RRR is about two.

  18. Allergic contact dermatitis.

    PubMed

    Becker, Detlef

    2013-07-01

    Allergic contact dermatitis is a frequent inflammatory skin disease. The suspected diagnosis is based on clinical symptoms, a plausible contact to allergens and a suitable history of dermatitis. Differential diagnoses should be considered only after careful exclusion of any causal contact sensitization. Hence, careful diagnosis by patch testing is of great importance. Modifications of the standardized test procedure are the strip patch test and the repeated open application test. The interpretation of the SLS (sodium lauryl sulfate) patch test as well as testing with the patients' own products and working materials are potential sources of error. Accurate patch test reading is affected in particular by the experience and individual factors of the examiner. Therefore, a high degree of standardization and continuous quality control is necessary and may be supported by use of an online patch test reading course made available by the German Contact Dermatitis Research Group. A critical relevance assessment of allergic patch test reactions helps to avoid relapses and the consideration of differential diagnoses. Any allergic test reaction should be documented in an allergy ID card including the INCI name, if appropriate. The diagnostics of allergic contact dermatitis is endangered by a seriously reduced financing of patch testing by the German statutory health insurances. Restrictive regulations by the German Drug Law block the approval of new contact allergens for routine patch testing. Beside the consistent avoidance of allergen contact, temporary use of systemic and topical corticosteroids is the therapy of first choice.

  19. Telescopic vision contact lens

    NASA Astrophysics Data System (ADS)

    Tremblay, Eric J.; Beer, R. Dirk; Arianpour, Ashkan; Ford, Joseph E.

    2011-03-01

    We present the concept, optical design, and first proof of principle experimental results for a telescopic contact lens intended to become a visual aid for age-related macular degeneration (AMD), providing magnification to the user without surgery or external head-mounted optics. Our contact lens optical system can provide a combination of telescopic and non-magnified vision through two independent optical paths through the contact lens. The magnified optical path incorporates a telescopic arrangement of positive and negative annular concentric reflectors to achieve 2.8x - 3x magnification on the eye, while light passing through a central clear aperture provides unmagnified vision.

  20. Optical contacting of quartz

    NASA Technical Reports Server (NTRS)

    Payne, L. L.

    1982-01-01

    The strength of the bond between optically contacted quartz surfaces was investigated. The Gravity Probe-B (GP-B) experiment to test the theories of general relativity requires extremely precise measurements. The quartz components of the instruments to make these measurements must be held together in a very stable unit. Optical contacting is suggested as a possible method of joining these components. The fundamental forces involved in optical contacting are reviewed and relates calculations of these forces to the results obtained in experiments.

  1. Characterization of laser transferred contact through aluminum oxide passivation layer

    NASA Astrophysics Data System (ADS)

    Urabe, Shunsuke; Irikawa, Junpei; Konagai, Makoto; Miyajima, Shinsuke

    2015-08-01

    The point contact structure of the rear side of crystalline silicon solar cells is used to realize high passivation quality and good electrical contact. A conversion efficiency of 19.8% was achieved on the passivated emitter and rear cell (PERC) structure with a widegap heterojunction emitter. In this solar cell, laser-fired contact (LFC) process is used to make the point contacts. In the LFC process, laser irradiation damage to the surface of crystalline silicon was found to be the big issues for higher passivation quality. We investigated laser-transferred contact (LTC) process as a new contacts formation process. The LTC samples showed higher effective minority carrier lifetime and good contact resistivity compared with the LFC samples.

  2. Laminated photovoltaic modules using back-contact solar cells

    DOEpatents

    Gee, James M.; Garrett, Stephen E.; Morgan, William P.; Worobey, Walter

    1999-09-14

    Photovoltaic modules which comprise back-contact solar cells, such as back-contact crystalline silicon solar cells, positioned atop electrically conductive circuit elements affixed to a planar support so that a circuit capable of generating electric power is created. The modules are encapsulated using encapsulant materials such as EVA which are commonly used in photovoltaic module manufacture. The module designs allow multiple cells to be electrically connected in a single encapsulation step rather than by sequential soldering which characterizes the currently used commercial practices.

  3. SAM Technical Contacts

    EPA Pesticide Factsheets

    These technical contacts are available to help with questions regarding method deviations, modifications, sample problems or interferences, quality control requirements, the use of alternative methods, or the need to address analytes or sample types.

  4. Occupational Contact Dermatitis

    PubMed Central

    2008-01-01

    Occupational contact dermatitis accounts for 90% of all cases of work-related cutaneous disorders. It can be divided into irritant contact dermatitis, which occurs in 80% of cases, and allergic contact dermatitis. In most cases, both types will present as eczematous lesions on exposed parts of the body, notably the hands. Accurate diagnosis relies on meticulous history taking, thorough physical examination, careful reading of Material Safety Data Sheets to distinguish between irritants and allergens, and comprehensive patch testing to confirm or rule out allergic sensitization. This article reviews the pathogenesis and clinical manifestations of occupational contact dermatitis and provides diagnostic guidelines and a rational approach to management of these often frustrating cases. PMID:20525126

  5. Fragrance allergic contact dermatitis.

    PubMed

    Cheng, Judy; Zug, Kathryn A

    2014-01-01

    Fragrances are a common cause of allergic contact dermatitis in Europe and in North America. They can affect individuals at any age and elicit a spectrum of reactions from contact urticaria to systemic contact dermatitis. Growing recognition of the widespread use of fragrances in modern society has fueled attempts to prevent sensitization through improved allergen identification, labeling, and consumer education. This review provides an overview and update on fragrance allergy. Part 1 discusses the epidemiology and evaluation of suspected fragrance allergy. Part 2 reviews screening methods, emerging fragrance allergens, and management of patients with fragrance contact allergy. This review concludes by examining recent legislation on fragrances and suggesting potential additions to screening series to help prevent and detect fragrance allergy.

  6. 76 FR 34692 - Inside Passage Electric Cooperative

    Federal Register 2010, 2011, 2012, 2013, 2014

    2011-06-14

    ... Energy Regulatory Commission Inside Passage Electric Cooperative Notice of Preliminary Permit Application..., 2011, and supplemented on May 18, 2011, the Inside Passage Electric Cooperative filed an application.... Applicant Contact: Mr. Peter A. Bibb, Operations Manager, Inside Passage Electric Cooperative, P.O. Box...

  7. Contact dermatitis complicating pinnaplasty.

    PubMed

    Singh-Ranger, G; Britto, J A; Sommerlad, B C

    2001-04-01

    Proflavine allergy is uncommon, occurring in approximately 6% of patients attending contact dermatitis clinics. Proflavine wool is used by many surgeons in the UK as a dressing that can be moulded to conform to the contours of a corrected prominent ear. It may have bacteriostatic properties. We present a case where contact dermatitis in response to proflavine developed after pinnaplasty. This caused diagnostic confusion, a lengthened hospital stay and an unsightly hypertrophic scar.

  8. The impact of contact

    NASA Astrophysics Data System (ADS)

    Finney, B.

    1986-10-01

    Scenarios of the impact on human society of radio contact with an extraterrestrial civilization are presented. Some believe that contact with advanced extraterrestrials would quickly devastate the human spirit, while others believe that these super-intelligent beings would show the inhabitants of the earth how to live in peace. It is proposed that the possible existence of extraterrestrial civilizations and the development of means of studying and communicating with them need to be considered.

  9. Contact air abrasion.

    PubMed

    Porth, R

    1999-05-01

    The advantages of contact air abrasion techniques are readily apparent. The first, of course, is the greatly increased ease of use. Working with contact also tends to speed the learning curve by giving the process a more natural dental feel. In addition, as one becomes familiar with working with a dust stream, the potential for misdirecting the air flow is decreased. The future use of air abrasion for deep decay removal will make this the treatment of choice for the next millennium.

  10. Ultrananocrystalline diamond contacts for electronic devices

    SciTech Connect

    Sumant, Anirudha V.; Smedley, John; Muller, Erik

    2016-11-01

    A method of forming electrical contacts on a diamond substrate comprises producing a plasma ball using a microwave plasma source in the presence of a mixture of gases. The mixture of gases include a source of a p-type or an n-type dopant. The plasma ball is disposed at a first distance from the diamond substrate. The diamond substrate is maintained at a first temperature. The plasma ball is maintained at the first distance from the diamond substrate for a first time, and a UNCD film, which is doped with at least one of a p-type dopant and an n-type dopant, is disposed on the diamond substrate. The doped UNCD film is patterned to define UNCD electrical contacts on the diamond substrate.

  11. Lettuce contact allergy.

    PubMed

    Paulsen, Evy; Andersen, Klaus E

    2016-02-01

    Lettuce (Lactuca sativa L.) and its varieties are important vegetable crops worldwide. They are also well-known, rarely reported, causes of contact allergy. As lettuce allergens and extracts are not commercially available, the allergy may be underdiagnosed. The aims of this article are to present new data on lettuce contact allergy and review the literature. Lettuce is weakly allergenic, and occupational cases are mainly reported. Using aimed patch testing in Compositae-allergic patients, two recent Danish studies showed prevalence rates of positive lettuce reactions of 11% and 22%. The majority of cases are non-occupational, and may partly be caused by cross-reactivity. The sesquiterpene lactone mix seems to be a poor screening agent for lettuce contact allergy, as the prevalence of positive reactions is significantly higher in non-occupationally sensitized patients. Because of the easy degradability of lettuce allergens, it is recommended to patch test with freshly cut lettuce stem and supplement this with Compositae mix. As contact urticaria and protein contact dermatitis may present as dermatitis, it is important to perform prick-to-prick tests, and possibly scratch patch tests as well. Any person who is occupationally exposed to lettuce for longer periods, especially atopics, amateur gardeners, and persons keeping lettuce-eating pets, is potentially at risk of developing lettuce contact allergy. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  12. Electric fences and accidental death.

    PubMed

    Burke, Michael; Odell, Morris; Bouwer, Heinrich; Murdoch, Adam

    2017-03-28

    Deaths which occur in association with agricultural electric fences are very rare. In fact, electric fences have undoubtedly saved numerous human and animal lives by safely and reliably keeping livestock confined to their fields and enclosures and thus preventing motor vehicle incidents when livestock get onto roads and highways. Accidental and intentional human contact with electric fences occurs regularly and causes little more than transient discomfort, however, on exceptional occasions, contact with electric fences appears to be directly related to the death of the individual. The precise pathophysiological cause of these deaths is unclear. We present two cases of deaths associated with electric fences, discuss the possible pathophysiological mechanisms in these cases, and suggest a universal approach to the medico-legal investigation and documentation of these deaths.

  13. Expansion Compression Contacts for Thermoelectric Legs

    NASA Technical Reports Server (NTRS)

    Sakamoto, Jeffrey

    2009-01-01

    In a proposed alternative to previous approaches to making hot-shoe contacts to the legs of thermoelectric devices, one relies on differential thermal expansion to increase contact pressures for the purpose of reducing the electrical resistances of contacts as temperatures increase. The proposed approach is particularly applicable to thermoelectric devices containing p-type (positive-charge-carrier) legs made of a Zintl compound (specifically, Yb14MnSb11) and n-type (negative charge-carrier) legs made of SiGe. This combination of thermoelectric materials has been selected for further development, primarily on the basis of projected thermoelectric performance. However, it is problematic to integrate, into a practical thermoelectric device, legs made of these materials along with a metal or semiconductor hot shoe that is required to be in thermal and electrical contact with the legs. This is partly because of the thermal-expansion mismatch of these materials: The coefficient of thermal expansion (CTE) of SiGe is 4.5 x 10(exp -6) C (exp -1), while the CTE of Yb14MnSb11 is 20 x 10(exp -6) C(exp -1). Simply joining a Yb14MnSb11 and a SiGe leg to a common hot shoe could be expected to result in significant thermal stresses in either or both legs during operation. Heretofore, such thermal stresses have been regarded as disadvantageous. In the proposed approach, stresses resulting from the CTE mismatch would be turned to advantage.

  14. Joint Contact Stress

    PubMed Central

    Brand, Richard A

    2005-01-01

    A joint's normal mechanical history contributes to the maintenance of articular cartilage and underlying bone. Loading facilitates the flow of nutrients into cartilage and waste products away, and additionally provides the mechanical signals essential for normal cell and tissue maintenance. Deleteriously low or high contact stresses have been presumed to result in joint deterioration, and particular aspects of the mechanical environment may facilitate repair of damaged cartilage. For decades, investigators have explored static joint contact stresses (under some more or less arbitrary condition) as a surrogate of the relevant mechanical history. Contact stresses have been estimated in vitro in many joints and in a number of species, although only rarely in vivo. Despite a number of widely varying techniques (and spatial resolutions) to measure these contact stresses, reported ranges of static peak normal stresses are relatively similar from joint to joint across species, and in the range of 0.5 to 5.0 MPa. This suggests vertebrate diarthrodial joints have evolved to achieve similar mechanical design criteria. Available evidence also suggests some disorders of cartilage deterioration are associated with somewhat higher peak pressures ranging from 1-20 MPa, but overlapping the range of normal pressures. Some evidence and considerable logic suggests static contact stresses per se do not predict cartilage responses, but rather temporal aspects of the contact stress history. Static contact stresses may therefore not be a reasonable surrogate for biomechanical studies. Rather, temporal and spatial aspects of the loading history undoubtedly induce beneficial and deleterious biological responses. Finally, since all articular cartilage experiences similar stresses, the concept of a "weight-bearing" versus a "non-weight-bearing" joint seems flawed, and should be abandoned. PMID:16089079

  15. The contact caveat: negative contact predicts increased prejudice more than positive contact predicts reduced prejudice.

    PubMed

    Barlow, Fiona Kate; Paolini, Stefania; Pedersen, Anne; Hornsey, Matthew J; Radke, Helena R M; Harwood, Jake; Rubin, Mark; Sibley, Chris G

    2012-12-01

    Contact researchers have largely overlooked the potential for negative intergroup contact to increase prejudice. In Study 1, we tested the interaction between contact quantity and valence on prejudice toward Black Australians (n = 1,476), Muslim Australians (n = 173), and asylum seekers (n = 293). In all cases, the association between contact quantity and prejudice was moderated by its valence, with negative contact emerging as a stronger and more consistent predictor than positive contact. In Study 2, White Americans (n = 441) indicated how much positive and negative contact they had with Black Americans on separate measures. Although both quantity of positive and negative contact predicted racism and avoidance, negative contact was the stronger predictor. Furthermore, negative (but not positive) contact independently predicted suspicion about Barack Obama's birthplace. These results extend the contact hypothesis by issuing an important caveat: Negative contact may be more strongly associated with increased racism and discrimination than positive contact is with its reduction.

  16. The Universal Influence of Contact Resistance on the Efficiency of a Thermoelectric Generator

    NASA Astrophysics Data System (ADS)

    Bjørk, Rasmus

    2015-08-01

    The influence of electrical and thermal contact resistance on the efficiency of a segmented thermoelectric generator is investigated. We consider 12 different segmented p-legs and 12 different segmented n-legs, using eight different p-type and eight different n-type thermoelectric materials. For all systems, a universal influence of both the electrical and thermal contact resistance is observed on the leg's efficiency, when the systems are analyzed in terms of the contribution of the contact resistance to the total resistance of the leg. The results are compared with the analytical model of Min and Rowe. In order for the efficiency not to decrease by more than 20%, the contact electrical resistance should be less than 30% of the total leg resistance for zero thermal contact resistance, while the thermal contact resistance should be less than 20% for zero electrical contact resistance. The universal behavior also allowed the maximum tolerable contact resistance for a segmented system to be found, i.e., the resistance at which a leg of only the high-temperature thermoelectric material has the same efficiency as the segmented leg with a contact resistance at the interface. If, e.g., segmentation increases the efficiency by 30%, then an electrical contact resistance of 30% or a thermal contact resistance of 20% can be tolerated.

  17. Instability of Contact Resistance in MEMS and NEMS DC Switches under Low Force: the Role of Alien Films on the Contact Surface

    PubMed Central

    Qiu, Haodong; Wang, Hong; Ke, Feixiang

    2013-01-01

    The metal contact is one of the most crucial parts in ohmic-contact microelectromechanical (MEMS) switches, as it determines the device performance and reliability. It has been observed that there is contact instability when the contact force is below a threshold value (minimum contact force). However, there has been very limited knowledge so far about the unstable electrical contact behavior under low contact force. In this work, the instability of Au-Au micro/nano-contact behavior during the initial stage of contact formation is comprehensively investigated for the first time. It has been found that the alien film on the contact surface plays a critical role in determining the contact behavior at the initial contact stage under low contact force. A strong correlation between contact resistance fluctuation at the initial contact stage and the presence of a hydrocarbon alien film on the contact surface is revealed. The enhancement of contact instability due to the alien film can be explained within a framework of trap-assisted tunneling.

  18. Solar cell contacts

    NASA Technical Reports Server (NTRS)

    Meier, D. L.; Campbell, R. B.; Davis, J. R., Jr.; Rai-Choudhury, P.; Sienkiewicz, L. J.

    1982-01-01

    Two experimental contact systems were examined and compared to a baseline contact system consisting of evaporated layers of titanium, palladium, and silver and an electroplated layer of copper. The first experimental contact system consisted of evaporated layers of titanium, nickel, and copper and an electroplated layer of copper. This system performed as well as the baseline system in all respects, including its response to temperature stress tests, to a humidity test, and to an accelerated aging test. In addition, the cost of this system is estimated to be only 43 percent of the cost of the baseline system at a production level of 25 MW/year. The second experimental contact system consisted of evaporated layers of nickel and copper and an electroplated layer of copper. Cells with this system show serious degradation in a temperature stress test at 350 C for 30 minutes. Auger electron spectroscopy was used to show that the evaporated nickel layer is not an adequate barrier to copper diffusion even at temperatures as low as 250 C. This fact brings into question the long-term reliability of this contact system.

  19. Electricity Customers

    EPA Pesticide Factsheets

    This page discusses key sectors and how they use electricity. Residential, commercial, and industrial customers each account for roughly one-third of the nation’s electricity use. The transportation sector also accounts for a small fraction of electricity.

  20. [Contact glass tonometer].

    PubMed

    Kanngiesser, H; Robert, Y; Dekker, P

    1996-10-01

    This paper present a tonometer incorporated in a contact lens, which allows simultaneous measurement of intraocular pressure and performance ophthalmoscopy. The tonometer can record the pulse curve continuously, which can give us an indication of any circulatory problem. The device is therefore expected to yield additional information useful for the diagnosis of early glaucoma. Te device has three force sensors built in, which allow continuous measurement of the force exerted on the eye surface by the contact lens. The force of the contact lens on the eye can be altered and makes the adjustment of different eye pressures possible. These induced changes of the eye pressure and their influence on the fundus can be checked. We have taken some measurements on enucleated human eyes to compare our device with a Statham tansducer in the vitreous. We found a good correlation. We are currently taking measurements in volunteers. The clinical relevance of these observations and measurements will be examined in a future study.

  1. Cross-contact chain

    NASA Technical Reports Server (NTRS)

    Lieneweg, U. (Inventor)

    1986-01-01

    A system is provided for use with wafers that include multiple integrated circuits that include two conductive layers in contact at multiple interfaces. Contact chains are formed beside the integrated circuits, each contact chain formed of the same two layers as the circuits, in the form of conductive segments alternating between the upper and lower layers and with the ends of the segments connected in series through interfaces. A current source passes a current through the series-connected segments, by way of a pair of current tabs connected to opposite ends of the series of segments. While the current flows, voltage measurements are taken between each of a plurality of pairs of voltage tabs, the two tabs of each pair connected to opposite ends of an interface that lies along the series-connected segments. A plot of interface conductances on normal probability chart enables prediction of the yield of good integrated circuits from the wafer.

  2. Allergic contact dermatitis.

    PubMed

    Alikhan, Ali; Maibach, Howard I

    2014-01-01

    Allergic contact dermatitis is one of the most important dermatologic disorders worldwide - it can cause significant morbidity and decreased quality of life, as well as having major economic implications and loss of vocational productivity. Patch testing is the most important discovery in allergic contact dermatitis and the best diagnostic modality to date; the thin-layer rapid- use epicutaneous (TRUE) test is a more recent patch test development which has improved the convenience and feasibility of the test. The future of allergic contact dermatitis is bright as we continue to learn more about the science of the disorder, as well as ways to improve diagnosis and patient care. Furthermore, it is important to remember, in this global age, that cooperation between health care providers worldwide is essential.

  3. Cross-contact chain

    NASA Technical Reports Server (NTRS)

    Lieneweg, Udo (Inventor)

    1988-01-01

    A system is provided for use with wafers that include multiple integrated circuits that include two conductive layers in contact at multiple interfaces. Contact chains are formed beside the integrated circuits, each contact chain formed of the same two layers as the circuits, in the form of conductive segments alternating between the upper and lower layers and with the ends of the segments connected in series through interfaces. A current source passes a current through the series-connected segments, by way of a pair of current tabs connected to opposite ends of the series of segments. While the current flows, voltage measurements are taken between each of a plurality of pairs of voltage tabs, the two tabs of each pair connected to opposite ends of an interface that lies along the series-connected segments. A plot of interface conductances on a normal probability chart, enables prediction of the yield of good integrated circuits from the wafer.

  4. Shoe allergic contact dermatitis.

    PubMed

    Matthys, Erin; Zahir, Amir; Ehrlich, Alison

    2014-01-01

    Foot dermatitis is a widespread condition, affecting men and women of all ages. Because of the location, this condition may present as a debilitating problem to those who have it. Allergic contact dermatitis involving the feet is frequently due to shoes or socks. The allergens that cause shoe dermatitis can be found in any constituent of footwear, including rubber, adhesives, leather, dyes, metals, and medicaments. The goal of treatment is to identify and minimize contact with the offending allergen(s). The lack of product information released from shoe manufacturers and the continually changing trends in footwear present a challenge in treating this condition. The aim of this study is to review the current literature on allergic contact shoe dermatitis; clinical presentation, allergens, patch testing, and management will be discussed. PubMed and MEDLINE databases were used for the search, with a focus on literature updates from the last 15 years.

  5. Acrylate Systemic Contact Dermatitis.

    PubMed

    Sauder, Maxwell B; Pratt, Melanie D

    2015-01-01

    Acrylates, the 2012 American Contact Dermatitis Society allergen of the year, are found in a range of products including the absorbent materials within feminine hygiene pads. When fully polymerized, acrylates are nonimmunogenic; however, if not completely cured, the monomers can be potent allergens.A 28-year-old woman is presented, who had her teeth varnished with Isodan (Septodont, Saint-Maur-des-Fossés, France) containing HEMA (2-hydroxyethyl methacrylate) with no initial reaction. Approximately 1 month later, the patient developed a genital dermatitis secondary to her feminine hygiene pads. The initial reaction resolved, but 5 months later, the patient developed a systemic contact dermatitis after receiving a second varnishing.The patient was dramatically patch test positive to many acrylates. This case demonstrates a reaction to likely unpolymerized acrylates within a feminine hygiene pad, as well as broad cross-reactivity or cosensitivity to acrylates, and possibly a systemic contact dermatitis with systemic re-exposure to unpolymerized acrylates.

  6. Electrical Properties

    NASA Astrophysics Data System (ADS)

    Schumacher, Bernd; Bach, Heinz-Gunter; Spitzer, Petra; Obrzut, Jan

    Electronic materials - conductors, insulators, semiconductors - play an important role in today's technology. They constitute "electrical and electronic devices", such as radio, television, telephone, electric light, electromotors, computers, etc. From a materials science point of view, the electrical properties of materials characterize two basic processes: electrical energy conduction (and dissipation) and electrical energy storage. Electrical conductivity describes the ability of a material to transport charge through the process of conduction, normalized by geometry. Electrical dissipation comes as the result of charge transport or conduction. Dissipation or energy loss results from the conversion of electrical energy to thermal energy (Joule heating) through momentum transfer during collisions as the charges move.

  7. Electrical Properties

    NASA Astrophysics Data System (ADS)

    Schumacher, Bernd; Bach, Heinz-Gunter; Spitzer, Petra; Obrzut, Jan; Seitz, Steffen

    Electronic materials - conductors, insulators, semiconductors - play an important role in today's technology. They constitute electrical and electronic devices, such as radio, television, telephone, electric light, electromotors, computers, etc. From a materials science point of view, the electrical properties of materials characterize two basic processes: electrical energy conduction (and dissipation) and electrical energy storage. Electrical conductivity describes the ability of a material to transport charge through the process of conduction, normalized by geometry. Electrical dissipation comes as the result of charge transport or conduction. Dissipation or energy loss results from the conversion of electrical energy to thermal energy (Joule heating) through momentum transfer during collisions as the charges move.

  8. Bus bar electrical feedthrough for electrorefiner system

    DOEpatents

    Williamson, Mark; Wiedmeyer, Stanley G; Willit, James L; Barnes, Laurel A; Blaskovitz, Robert J

    2013-12-03

    A bus bar electrical feedthrough for an electrorefiner system may include a retaining plate, electrical isolator, and/or contact block. The retaining plate may include a central opening. The electrical isolator may include a top portion, a base portion, and a slot extending through the top and base portions. The top portion of the electrical isolator may be configured to extend through the central opening of the retaining plate. The contact block may include an upper section, a lower section, and a ridge separating the upper and lower sections. The upper section of the contact block may be configured to extend through the slot of the electrical isolator and the central opening of the retaining plate. Accordingly, relatively high electrical currents may be transferred into a glovebox or hot-cell facility at a relatively low cost and higher amperage capacity without sacrificing atmosphere integrity.

  9. Allergic Contact Dermatitis.

    PubMed

    Kostner, Lisa; Anzengruber, Florian; Guillod, Caroline; Recher, Mike; Schmid-Grendelmeier, Peter; Navarini, Alexander A

    2017-02-01

    Allergic contact dermatitis (ACD) is a common skin disease caused by a T cell-mediated immune reaction to usually innocuous allergens. ACD can have grave medical and socioeconomic consequences. ACD and irritant contact dermatitis often occur together. A detailed history and clinical examination are crucial and guide patch testing, which is the gold standard to diagnose ACD. T-cell clones persisting in the skin may explain the tendency of ACD to relapse even after years of allergen avoidance. Traditional treatments for ACD are topical steroids, calcineurin inhibitors, phototherapy, retinoids (including the recent alitretinoin), and immunosuppressants. Targeted therapies are lacking.

  10. Spa contact dermatitis.

    PubMed

    Yankura, Jessica A; Marks, James G; Anderson, Bryan E; Adams, David R

    2008-01-01

    Potassium monopersulfate (MPS) is widely used in spa and pool "shock" treatments, yet contact dermatitis associated with MPS has been rarely reported. A patient presented with a generalized scattered dermatitis from the neck down that worsened after spa use. Patch testing elicited a ++ reaction to ammonium persulfate. Contact with ammonium persulfate was ruled out; however, MPS, which can cross-react with ammonium persulfate, was found to be the active ingredient in the patient's spa shock treatments. The dermatitis cleared after the patient switched to a hydrogen peroxide-based shock treatment.

  11. Contact lenses for athletes.

    PubMed

    Spinell, M R

    1993-01-01

    The introduction and development of soft lenses and rigid gas-permeable lenses has ushered in a new era in fitting athletes with contact lenses. Many of the well-known disadvantages associated with polymethylmethacrylate (PMMA)-type lenses have been either eliminated or minimized. Fitting athletes with contact lenses must still be viewed with caution, however, since athletes' visual needs are usually much more demanding than those of the general public. An indiscriminate choice of lens design can adversely affect athletic performance and may even create a hazardous situation. An intelligent choice of lens can provide some subtle advantages that may improve athletic performance and provide the margin for victory.

  12. Chemical Detection using Electrically Open Circuits having no Electrical Connections

    NASA Technical Reports Server (NTRS)

    Woodward, Stanley E.; Olgesby, Donald M.; Taylor, Bryant D.; Shams, Qamar A.

    2008-01-01

    This paper presents investigations to date on chemical detection using a recently developed method for designing, powering and interrogating sensors as electrically open circuits having no electrical connections. In lieu of having each sensor from a closed circuit with multiple electrically connected components, an electrically conductive geometric pattern that is powered using oscillating magnetic fields and capable of storing an electric field and a magnetic field without the need of a closed circuit or electrical connections is used. When electrically active, the patterns respond with their own magnetic field whose frequency, amplitude and bandwidth can be correlated with the magnitude of the physical quantities being measured. Preliminary experimental results of using two different detection approaches will be presented. In one method, a thin film of a reactant is deposited on the surface of the open-circuit sensor. Exposure to a specific targeted reactant shifts the resonant frequency of the sensor. In the second method, a coating of conductive material is placed on a thin non-conductive plastic sheet that is placed over the surface of the sensor. There is no physical contact between the sensor and the electrically conductive material. When the conductive material is exposed to a targeted reactant, a chemical reaction occurs that renders the material non-conductive. The change in the material s electrical resistance within the magnetic field of the sensor alters the sensor s response bandwidth and amplitude, allowing detection of the reaction without having the reactants in physical contact with the sensor.

  13. Device serves as hinge and electrical connector for circuit boards

    NASA Technical Reports Server (NTRS)

    Bethel, P. G.; Harris, G. G.

    1966-01-01

    Hinge makes both sides of electrical circuit boards readily accessible for component checkout and servicing. The hinge permits mounting of two circuit boards and incorporates connectors to maintain continuous electrical contact between the components on both boards.

  14. Antistiction technique using elastomer contact structure in woven electronic textiles

    NASA Astrophysics Data System (ADS)

    Yamashita, Takahiro; Takamatsu, Seiichi; Miyake, Koji; Itoh, Toshihiro

    2014-01-01

    In this paper, we present an antistiction technique using an elastomer contact structure in woven electronic textiles (e-textiles). A coating of poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) in the form of a solid conductive film on a hemispherical silicone elastomer structure is employed in creating an electrical circuit embedded into the fabric of a woven e-textile, where the contact structure reduces the contact area and capillary force generated by the moisture in air between weft and warp ribbons. Stiction occurs between a weft and a warp without the contact structure under an RH of 80%, and the detachment of the stuck ribbon requires a delamination load of about 0.2 N. On the other hand, in the case of contact between the contact structure and the ribbon coated with plain PEDOT:PSS, stiction does not occur as the relative humidity increases from 20 to 80%.

  15. Ohmic contacts to Gallium Nitride materials

    NASA Astrophysics Data System (ADS)

    Greco, Giuseppe; Iucolano, Ferdinando; Roccaforte, Fabrizio

    2016-10-01

    In this review article, a comprehensive study of the mechanisms of Ohmic contact formation on GaN-based materials is presented. After a brief introduction on the physics of Ohmic contacts, a resume of the most important results obtained in literature is reported for each of the systems taken in consideration (n-type GaN, p-type GaN and AlGaN/GaN heterostructures). The optimal metallization schemes and processing conditions to obtain low resistance Ohmic contacts are presented, discussing the role of the single metals composing the stack and the modification induced by the thermal annealing, either on the metal layers or at the interface with GaN. Physical insights on the mechanism of Ohmic contact formation have been gained by correlating the temperature dependence of the electrical parameters with a morphological/structural analysis of the interface. In the case of the AlGaN/GaN systems, the influence of the heterostructure parameters on the Ohmic contacts has been taken into account adapting the classical thermionic field emission model to the presence of the two dimensional electron gas (2DEG). Finally, the state of the art of "Au-free" metallization to AlGaN/GaN heterostructures is also presented, being this latter a relevant topic for the integration of GaN technology on large scale Silicon devices fabs.

  16. Contact: Releasing the news

    NASA Astrophysics Data System (ADS)

    Pinotti, Roberto

    The problem of mass behavior after man's future contacts with other intelligences in the universe is not only a challenge for social scientists and political leaders all over the world, but also a cultural time bomb as well. In fact, since the impact of CETI (Contact with Extraterrestrial Intelligence) on human civilization, with its different cultures, might cause a serious socio-anthropological shock, a common and predetermined worldwide strategy is necessary in releasing the news after the contact, in order to keep possible manifestations of fear, panic and hysteria under control. An analysis of past studies in this field and of parallel historical situations as analogs suggests a definite "authority crisis" in the public as a direct consequence of an unexpected release of the news, involving a devastating "chain reaction" process (from both the psychological and sociological viewpoints) of anomie and maybe the collapse of today's society. The only way to prevent all this is to prepare the world's public opinion concerning contact before releasing the news, and to develop a long-term strategy through the combined efforts of scientists, political leaders, intelligence agencies and the mass media, in order to create the cultural conditions in which a confrontation with ETI won't affect mankind in a traumatic way. Definite roles and tasks in this multi-level model are suggested.

  17. [Contact allergies in musicians].

    PubMed

    Gasenzer, E R; Neugebauer, E A M

    2012-12-01

    During the last years, the problem of allergic diseases has increased. Allergies are errant immune responses to a normally harmless substance. In musicians the allergic contact dermatitis to exotic woods is a special problem. Exotic rosewood contains new flavonoids, which trigger an allergic reaction after permanent contact with the instrument. High quality woodwind instruments such as baroque flute or clarinets are made in ebony or palisander because of its great sound. Today instruments for non-professional players are also made in these exotic materials and non-professionals may have the risk to develop contact dermatitis, too. Brass-player has the risk of an allergic reaction to the different metals contained in the metal sheets of modern flutes and brass instruments. Specially nickel and brass alloys are used to product flute tubes or brass instruments. Special problem arises in children: patients who are allergic to plants or foods have a high risk to develop contact dermatitis. Parents don't know the materials of low-priced instruments for beginners. Often unknown cheap woods from exotic areas are used. Low-priced brass instruments contain high amount of brass and other cheap metals. Physicians should advice musician-patients or parents about the risks of the different materials and look for the reason of eczema on mouth, face, or hands. © Georg Thieme Verlag KG Stuttgart · New York.

  18. The contact percolation transition

    NASA Astrophysics Data System (ADS)

    Shen, Tianqi; O'Hern, Corey; Shattuck, Mark

    2012-02-01

    Typical quasistatic compression algorithms for generating jammed packings of athermal, purely repulsive particles begin with dilute configurations and then apply successive compressions with relaxation of the elastic energy allowed between each compression step. It is well-known that during isotropic compression athermal systems with purely repulsive interactions undergo a jamming transition at packing fraction φJ from an unjammed state with zero pressure to a jammed, rigid state with nonzero pressure. Using extensive computer simulations, we show that a novel second-order-like, contact percolation, which signals the formation of a system-spanning cluster of mutually contacting particles, occurs at φP< φJ, preceding the jamming transition. By measuring the number of non-floppy modes of the dynamical matrix, the displacement field between successive compression steps, and the overlap between the adjacency matrix, which represents the network of contacting grains, at φ and φJ, we find that the contact percolation transition also heralds the onset of nontrivial response to applied stress. Highly heterogeneous, cooperative, and non-affine particle motion occurs in unjammed systems significantly below the jamming transition for φP< φ< φJ,

  19. Have Confidence in Contact

    ERIC Educational Resources Information Center

    Crisp, Richard J.; Turner, Rhiannon N.

    2010-01-01

    In an article in the May-June 2009 "American Psychologist," we discussed a new approach to reducing prejudice and encouraging more positive intergroup relations (Crisp & Turner, 2009). We named the approach imagined intergroup contact and defined it as "the mental simulation of a social interaction with a member or members of an outgroup category"…

  20. Compact contacting device

    NASA Technical Reports Server (NTRS)

    Acharya, Arun (Inventor); Gottzmann, Christian F. (Inventor); Lockett, Michael J. (Inventor); Schneider, James S. (Inventor); Victor, Richard A. (Inventor); Zawierucha, Robert (Inventor)

    1994-01-01

    An apparatus comprising a rotatable mass of structured packing for mass or heat transfer between two contacting fluids of different densities wherein the packing mass is made up of corrugated sheets of involute shape relative to the axis of the packing mass and form a logarithmic spiral curved counter to the direction of rotation.

  1. Disproportionate Minority Contact.

    PubMed

    Fix, Rebecca L; Cyperski, Melissa A; Burkhart, Barry R

    2017-04-01

    The overrepresentation of racial/ethnic minorities within the criminal justice system relative to their population percentage, a phenomenon termed disproportionate minority contact, has been examined within general adult and adolescent offender populations; yet few studies have tested whether this phenomenon extends to juvenile sexual offenders (JSOs). In addition, few studies have examined whether offender race/ethnicity influences registration and notification requirements, which JSOs are subject to in some U.S. states. The present study assessed for disproportionate minority contact among general delinquent offenders and JSOs, meaning it aimed to test whether the criminal justice system treats those accused of sexual and non-sexual offenses differently by racial/ethnic group. Furthermore, racial/ethnic group differences in risk, legal classification, and sexual offending were examined for JSOs. Results indicated disproportionate minority contact was present among juveniles with non-sexual offenses and JSOs in Alabama. In addition, offense category and risk scores differed between African American and European American JSOs. Finally, registration classifications were predicted by offending characteristics, but not race/ethnicity. Implications and future directions regarding disproportionate minority contact among JSOs and social and legal policy affecting JSOs are discussed.

  2. Pizza makers' contact dermatitis.

    PubMed

    Lembo, Serena; Lembo, Claudio; Patruno, Cataldo; Balato, Anna; Balato, Nicola; Ayala, Fabio

    2014-01-01

    Contact eczema to foods, spices, and food additives can occur in occupational and nonoccupational settings in those who grow, handle, prepare, or cook food. Pizza is one of the most eaten foods in every continent, and pizza making is a common work in many countries. We aimed to evaluate the occurrence and the causes of contact dermatitis in pizza makers in Naples. We performed an observational study in 45 pizza makers: all the enrolled subjects had to answer a questionnaire designed to detect personal history of respiratory or cutaneous allergy, atopy; work characteristics and timing were also investigated. Every subject attended the dermatology clinic for a complete skin examination, and when needed, patients were patch tested using the Italian baseline series of haptens integrated with an arbitrary pizza makers series. Our results reported that 13.3% of the enrolled pizza makers (6/45) presented hand eczema, and that 8.9% (4/45) were affected by occupational allergic contact dermatitis. Diallyl disulfide and ammonium persulfate were the responsible substances. Performing patch tests in pizza makers and food handlers affected by hand contact dermatitis is useful. We propose a specific series of haptens for this wide working category.

  3. Contact Efflorescence on Demand

    NASA Astrophysics Data System (ADS)

    Davis, R. D.; Lance, S.; Gordon, J. A.; Ushijima, S.; Tolbert, M. A.

    2014-12-01

    The phase state of atmospheric aerosols (liquid vs solid) plays an important role in particle growth, cloud formation, climate impact and visibility degradation. In the atmosphere, changes in relative humidity (RH) and temperature cause phase transitions in the atmospheric particulate. Efflorescence, the process of salt crystal nucleation from an aqueous electrolyte solution upon decreasing RH, often occurs at a lower RH than the reverse process of deliquescence. It has been shown that the efflorescence RH can occur at a higher RH in the presence of a heterogeneous surface immersed in a liquid particle. Here we present a new laboratory technique using optically levitated particles to study heterogeneous efflorescence initiated by contact with an external particle. In this work, collisions between aqueous microdroplets and heterogeneous nuclei are monitored in situ using scattered laser light to quantify the number of collisions and to detect phase transitions. We find that when contact initiates the phase transition, efflorescence occurs at a higher RH than when the same heterogeneous nucleus is immersed in the particle. The results of these experiments will be discussed in the context of understanding contact nucleation on a mechanistic level and predicting the relative importance of contact efflorescence in the atmosphere.

  4. Have Confidence in Contact

    ERIC Educational Resources Information Center

    Crisp, Richard J.; Turner, Rhiannon N.

    2010-01-01

    In an article in the May-June 2009 "American Psychologist," we discussed a new approach to reducing prejudice and encouraging more positive intergroup relations (Crisp & Turner, 2009). We named the approach imagined intergroup contact and defined it as "the mental simulation of a social interaction with a member or members of an outgroup category"…

  5. Lubrication Of Nonconformal Contacts

    NASA Technical Reports Server (NTRS)

    Jeng, Yeau-Ren

    1991-01-01

    Report discusses advances in knowledge of lubrication of nonconformal contacts in bearings and other machine elements. Reviews previous developments in theory of lubrication, presents advances in theory of lubrication to determine minimum film thickness, and describes experiments designed to investigate one of regimes of lubrication for ball bearings.

  6. [Formaldehyde contact allergy].

    PubMed

    Kleinhans, D; Dayss, U

    1980-01-01

    Several products used by housewives contain formic aldehyde as preservative: products for cleaning, washing, polishing furniture. Such products and products free from formic aldehyde are listed in order to achieve full prophylaxis in housewives with an allergic contact dermatitis from formic aldehyde.

  7. Thermal Contact Conductance

    NASA Technical Reports Server (NTRS)

    Salerno, Louis J.; Kittel, Peter

    1997-01-01

    The performance of cryogenic instruments is often a function of their operating temperature. Thus, designers of cryogenic instruments often are required to predict the operating temperature of each instrument they design. This requires accurate thermal models of cryogenic components which include the properties of the materials and assembly techniques used. When components are bolted or otherwise pressed together, a knowledge of the thermal performance of such joints are also needed. In some cases, the temperature drop across these joints represents a significant fraction of the total temperature difference between the instrument and its cooler. While extensive databases exist on the thermal properties of bulk materials, similar databases for pressed contacts do not. This has often lead to instrument designs that avoid pressed contacts or to the over-design of such joints at unnecessary expense. Although many people have made measurements of contact conductances at cryogenic temperatures, this data is often very narrow in scope and even more often it has not been published in an easily retrievable fashion, if published at all. This paper presents a summary of the limited pressed contact data available in the literature.

  8. Pore corrosion model for gold-plated copper contacts.

    SciTech Connect

    Moffat, Harry K.; Sun, Amy Cha-Tien; Glauner, Carly S.; Enos, David George

    2005-04-01

    The goal of this study is to model the electrical response of gold plated copper electrical contacts exposed to a mixed flowing gas stream consisting of air containing 10ppb H2S at 30 C and a relative humidity of 70%. This environment accelerates the attack normally observed in a light industrial environment (essentially a simplified version of the Battelle class 2 environment). Corrosion rates were quantified by measuring the corrosion site density, size distribution, and the macroscopic electrical resistance of the aged surface as a function of exposure time. A pore corrosion numerical model was used to predict both the growth of copper sulfide corrosion product which blooms through defects in the gold layer and the resulting electrical contact resistance of the aged surface. Assumptions about the distribution of defects in the noble metal plating and the mechanism for how corrosion blooms affect electrical contact resistance were needed to close the numerical model. Comparisons are made to the experimentally observed number density of corrosion sites, the size distribution of corrosion product blooms, and the cumulative probability distribution of the electrical contact resistance. Experimentally, the bloom site density increases as a function of time, whereas the bloom size distribution remains relatively independent of time. These two effects are included in the numerical model by adding a corrosion initiation probability proportional to the surface area along with a probability for bloom-growth extinction proportional to the corrosion product bloom volume. The cumulative probability distribution of electrical resistance becomes skewed as exposure time increases. While the electrical contact resistance increases as a function of time for a fraction of the bloom population, the median value remains relatively unchanged. In order to model this behavior, the resistance calculated for large blooms has been weighted more heavily.

  9. Electrical Curriculum.

    ERIC Educational Resources Information Center

    EASTCONN Regional Educational Services Center, North Windham, CT.

    The purpose of this electrical program is to prepare students for service, repair, and assembly of electrically driven or controlled devices. The program theory and application includes mechanical assemblies, electrical circuitry, and electronic principles including basic digital circuitry. The electrical program manual includes the following…

  10. Contact-resistance process cliff

    NASA Technical Reports Server (NTRS)

    Pina, C. A.

    1985-01-01

    Several approaches were investigated to obtain a measure of the quality of the contact resistance between metal and a diffused or polysilicon layer. These approaches have included the use of both short and very long contact strings as well as arays of contacts with different sizes to determine the contact resistance process cliff. Results from these approaches are discussed.

  11. Measuring Electrical Resistivity Of Compacted Powder

    NASA Technical Reports Server (NTRS)

    Shlichta, Paul J.

    1991-01-01

    Slightly modified micrometer used in conjunction with special cup to measure electrical resistance of specimen of powder as function of packing fraction. Powder pressed between anvils of micrometer, which make electrical contact with specimen. Device used in manufacturing batteries to determine effective electrical conductivities of powders loaded into plastic sheets to make battery substrates. Coupled with good mathematical description of expected conductivity of particulate composite as function of packing density. Also serves as tool for evaluating conductivity of dispersed phase, as well as evaluating electrical resistances of interparticle contacts.

  12. Modeling of organic thin film transistors: Effect of contact resistances

    NASA Astrophysics Data System (ADS)

    Natali, Dario; Fumagalli, Luca; Sampietro, Marco

    2007-01-01

    Field effect transistors require an Ohmic source contact and an Ohmic drain contact for ideal operation. In many real situations, however, and specifically in organic devices, the injection of charge carriers from metals into semiconductors can be an inefficient process that is non-Ohmic. This has an adverse impact on the performance of thin film transistors and makes the analysis of electrical measurements a complex task because contact effects need to be disentangled from transistor properties. This paper deals with the effects of non-Ohmic contacts on the modeling of organic transistors and gives specific rules on how to extract the real transistor parameters (mobility, threshold voltage, and contact resistances) using only electrical measurements. The method consists of a differential analysis of the transfer characteristic curves (current versus gate voltage) and exploits the different functional dependences of current on gate voltage which is induced by the presence of contact resistances. This paper fully covers the situations from constant carrier mobility to power law gate-voltage-dependent mobility, from constant contact resistance to gate-voltage-dependent contact resistance, and in the linear and in the saturation regime of the operation of the transistor. It also gives important criteria for the validation of the extracted parameters to assess whether the conditions for the application of the method are fulfilled. Examples of application to organic transistors showing various behaviors are given and discussed.

  13. Theoretical and experimental investigations of nano-Schottky contacts

    NASA Astrophysics Data System (ADS)

    Rezeq, Moh'd.; Eledlebi, Khouloud; Ismail, Mohammed; Dey, Ripon Kumar; Cui, Bo

    2016-07-01

    Formation of metal-semiconductor (M-S) contacts at sub-20 nanometer range is a key requirement for down-scaling of semiconductor devices. However, electrical measurements of M-S contacts at this scale have exhibited dramatic change in the current-voltage (I-V) characteristics compared to that of conventional (or planar) Schottky contacts. This change is actually attributed to the limited metal contact region where the transferred charge from the semiconductor into the metal is confined to a small surface area, which in turn results in an enhanced electric field at the nano-M-S interface. We here present detailed theoretical models to analyze the nano-M-S junctions at 10 nm contact range and then implement this analysis on the experimental data we conducted under these conditions. Both theoretical and experimental results demonstrate a significant effect of the contact size on the electronic structure of the M-S junctions and thus on the I-V characteristics. This effect is rather prominent when the size of the metal contact is substantially smaller than the width of conventional depletion region of the relevant planar M-S contacts.

  14. Theoretical and experimental investigations of nano-Schottky contacts

    SciTech Connect

    Rezeq, Moh'd; Eledlebi, Khouloud; Ismail, Mohammed; Dey, Ripon Kumar; Cui, Bo

    2016-07-28

    Formation of metal-semiconductor (M-S) contacts at sub-20 nanometer range is a key requirement for down-scaling of semiconductor devices. However, electrical measurements of M-S contacts at this scale have exhibited dramatic change in the current-voltage (I-V) characteristics compared to that of conventional (or planar) Schottky contacts. This change is actually attributed to the limited metal contact region where the transferred charge from the semiconductor into the metal is confined to a small surface area, which in turn results in an enhanced electric field at the nano-M-S interface. We here present detailed theoretical models to analyze the nano-M-S junctions at 10 nm contact range and then implement this analysis on the experimental data we conducted under these conditions. Both theoretical and experimental results demonstrate a significant effect of the contact size on the electronic structure of the M-S junctions and thus on the I-V characteristics. This effect is rather prominent when the size of the metal contact is substantially smaller than the width of conventional depletion region of the relevant planar M-S contacts.

  15. Allergic contact dermatitis in children.

    PubMed

    Fontana, E; Belloni Fortina, A

    2014-12-01

    Allergic contact dermatitis is an inflammatory skin disease (delayed type hypersensitivity reaction) that accounts for up to 20% of all childhood dermatitis. Allergic contact dermatitis represents a clinical manifestation of contact sensitization and usually occurs at skin sites that have come into contact with the allergen. The clinical features of allergic contact dermatitis are itchy eczematous lesions. Prevalence of contact sensitization varies between 27% and 96% of children with suspected contact dermatitis. The relationship between contact sensitization and atopic dermatitis has been widely discussed but only conflicting data have been reported. Epicutaneous patch testing is the gold standard for the diagnosis of allergic contact dermatitis. The most common allergens detected in children are: metals, topical medicaments, fragrances, and preservatives. The first line management of allergic contact dermatitis in children is to avoid the offending allergens identified with the patch test and a topical corticosteroid therapy.

  16. [Contact dermatitis from Agave americana].

    PubMed

    de la Cueva, Pablo; González-Carrascosa, Mateo; Campos, Minia; Leis, Vicente; Suárez, Ricardo; Lázaro, Pablo

    2005-10-01

    Numerous plant species and their derivatives can cause skin reactions through a variety of mechanisms: irritative contact dermatitis, allergic contact dermatitis, contact urticaria and photodermatitis. We present a case of irritative contact dermatitis after exposure to the sap of Agave americana. The skin symptoms in this case have only been described on rare occasions; although this condition usually presents with a papulovesicular rash, in this patient it appeared as purpuric lesions in the contact area.

  17. Contact Graph Routing

    NASA Technical Reports Server (NTRS)

    Burleigh, Scott C.

    2011-01-01

    Contact Graph Routing (CGR) is a dynamic routing system that computes routes through a time-varying topology of scheduled communication contacts in a network based on the DTN (Delay-Tolerant Networking) architecture. It is designed to enable dynamic selection of data transmission routes in a space network based on DTN. This dynamic responsiveness in route computation should be significantly more effective and less expensive than static routing, increasing total data return while at the same time reducing mission operations cost and risk. The basic strategy of CGR is to take advantage of the fact that, since flight mission communication operations are planned in detail, the communication routes between any pair of bundle agents in a population of nodes that have all been informed of one another's plans can be inferred from those plans rather than discovered via dialogue (which is impractical over long one-way-light-time space links). Messages that convey this planning information are used to construct contact graphs (time-varying models of network connectivity) from which CGR automatically computes efficient routes for bundles. Automatic route selection increases the flexibility and resilience of the space network, simplifying cross-support and reducing mission management costs. Note that there are no routing tables in Contact Graph Routing. The best route for a bundle destined for a given node may routinely be different from the best route for a different bundle destined for the same node, depending on bundle priority, bundle expiration time, and changes in the current lengths of transmission queues for neighboring nodes; routes must be computed individually for each bundle, from the Bundle Protocol agent's current network connectivity model for the bundle s destination node (the contact graph). Clearly this places a premium on optimizing the implementation of the route computation algorithm. The scalability of CGR to very large networks remains a research topic

  18. Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

    NASA Astrophysics Data System (ADS)

    Borrel, Julien; Hutin, Louis; Kava, Donato; Gassilloud, Remy; Bernier, Nicolas; Morand, Yves; Nemouchi, Fabrice; Gregoire, Magali; Dubois, Emmanuel; Vinet, Maud

    2017-04-01

    In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the theoretical potential of this paradigm, mainly to contact nFETs, the latter highlights concerns about the electrical characterization of such contacts along with issues occurring during their physical implementation.

  19. Contact dynamics math model

    NASA Technical Reports Server (NTRS)

    Glaese, John R.; Tobbe, Patrick A.

    1986-01-01

    The Space Station Mechanism Test Bed consists of a hydraulically driven, computer controlled six degree of freedom (DOF) motion system with which docking, berthing, and other mechanisms can be evaluated. Measured contact forces and moments are provided to the simulation host computer to enable representation of orbital contact dynamics. This report describes the development of a generalized math model which represents the relative motion between two rigid orbiting vehicles. The model allows motion in six DOF for each body, with no vehicle size limitation. The rotational and translational equations of motion are derived. The method used to transform the forces and moments from the sensor location to the vehicles' centers of mass is also explained. Two math models of docking mechanisms, a simple translational spring and the Remote Manipulator System end effector, are presented along with simulation results. The translational spring model is used in an attempt to verify the simulation with compensated hardware in the loop results.

  20. Metal Contacts in Semiconductors.

    DTIC Science & Technology

    1983-11-01

    surfaces, Pnotoelectron spe troscopy, Auger electron spectro- I scopy, Schottky barriers, ohmic contacts, Defects in semiconductors, Cadmium * telluride...Indium phosphide, Gallium arsenide, Gallium Selenide . j 20. ABSTR ACT (roothat ow rees esh " neceay and td..ity by block -. b*w) SThe application of...angstroms. Also, provided one eliminates the systems where cadmium outdiffusion into high work function metals occurs then good agreement between the

  1. Electron Device Contact Studies.

    DTIC Science & Technology

    1982-05-01

    from van der Pauw measurements ......................................... 110 5.2 M’odel of a MS contact with an interfacial oxide layer. 116 6.1 I-V...Process ............................ .76 4.3 Diffused Layer Data Determined from van der Pauw 77 Measurements... van der Pauw measurement was performed and a value of diffused layer sheet resistivity was obtained. Junction lapping and staining was then used to

  2. Contact dermatitis in children

    PubMed Central

    2010-01-01

    Contact dermatitis in pediatric population is a common but (previously) under recognized disease. It is usually divided into the allergic and the irritant forms. The diagnosis is usually obtained with the patch test technique after conducting a thorough medical history and careful physical examination but patch testing in infants may be particularly difficult, and false-positive reactions may occur. This study also provides an overview of the most common allergens in pediatric population and discusses various therapeutic modalities. PMID:20205907

  3. Fluid cooled electrical assembly

    DOEpatents

    Rinehart, Lawrence E.; Romero, Guillermo L.

    2007-02-06

    A heat producing, fluid cooled assembly that includes a housing made of liquid-impermeable material, which defines a fluid inlet and a fluid outlet and an opening. Also included is an electrical package having a set of semiconductor electrical devices supported on a substrate and the second major surface is a heat sink adapted to express heat generated from the electrical apparatus and wherein the second major surface defines a rim that is fit to the opening. Further, the housing is constructed so that as fluid travels from the fluid inlet to the fluid outlet it is constrained to flow past the opening thereby placing the fluid in contact with the heat sink.

  4. Contact Geometry of Curves

    NASA Astrophysics Data System (ADS)

    Vassiliou, Peter J.

    2009-10-01

    Cartan's method of moving frames is briefly recalled in the context of immersed curves in the homogeneous space of a Lie group G. The contact geometry of curves in low dimensional equi-affine geometry is then made explicit. This delivers the complete set of invariant data which solves the G-equivalence problem via a straightforward procedure, and which is, in some sense a supplement to the equivariant method of Fels and Olver. Next, the contact geometry of curves in general Riemannian manifolds (M,g) is described. For the special case in which the isometries of (M,g) act transitively, it is shown that the contact geometry provides an explicit algorithmic construction of the differential invariants for curves in M. The inputs required for the construction consist only of the metric g and a parametrisation of structure group SO(n); the group action is not required and no integration is involved. To illustrate the algorithm we explicitly construct complete sets of differential invariants for curves in the Poincaré half-space H3 and in a family of constant curvature 3-metrics. It is conjectured that similar results are possible in other Cartan geometries.

  5. Contacts for high-resistivity (Cd,Mn)Te crystals

    SciTech Connect

    Witkowska-Baran, M.; James, R.; Mycielski, A.; Kochanowska, D.; Szadkowski, A.J.; Jakiela, R.; Witkowska, B.; Kaliszek, W.; Domagala, J.; Lusakowska, E.; Domukhovski, V.; Dybko, K.; Cui, Y.; and James, R.B.

    2010-09-09

    Semi-insulating (Cd,Mn)Te crystals offer a material that may compete well with the commonly used (Cd,Zn)Te crystals for manufacturing large-area X- and gamma-ray detectors. The Bridgman growth method yields good quality, high-resistivity (10{sup 9} - 10{sup 10} {Omega} {center_dot} cm) crystals of (Cd,Mn)Te:V. Doping the as-grown crystals with the compensating agent vanadium ({approx} 10{sup 16} cm{sup -3}) ensures their high resistivity; thereafter, annealing them in cadmium vapors reduces the number of cadmium vacancies. Applying the crystals as detectors necessitates having satisfactory electrical contacts. Accordingly, we explored various techniques of ensuring good electrical contacts to these semi-insulating (Cd,Mn)Te crystals, assessing metallic layers, monocrystalline semiconductor layers, and amorphous (or nanocrystalline) semiconductor layers. We found that ZnTe heavily doped ({approx} 10{sup 18} cm{sup -3}) with Sb, and CdTe heavily doped ({approx} 10{sup 17} cm{sup -3}) with In, proved satisfactory semiconductor contact layers. They subsequently enabled us to establish good contacts (with only narrow tunneling barriers) to the Au layer that usually constitutes the most external contact layer. We outline our technology of applying electrical contacts to semi-insulating (Cd,Mn)Te, and describe some important properties.

  6. Micro-contacting of single and periodically arrayed columnar silicon structures by focused ion beam techniques

    SciTech Connect

    Friedrich, F. Herfurth, N.; Teodoreanu, A.-M.; Boit, C.

    2014-06-16

    Micron-sized, periodic crystalline Silicon columns on glass substrate were electrically contacted with a transparent conductive oxide front contact and a focused ion beam processed local back contact. Individual column contacts as well as arrays of >100 contacted columns were processed. Current-voltage characteristics of the devices were determined. By comparison with characteristics obtained from adapted device simulation, the absorber defect density was reconstructed. The contacting scheme allows the fabrication of testing devices in order to evaluate the electronic potential of promising semiconductor microstructures.

  7. Electric vehicle drive train with contactor protection

    DOEpatents

    Konrad, C.E.; Benson, R.A.

    1994-11-29

    A drive train for an electric vehicle includes a traction battery, a power drive circuit, a main contactor for connecting and disconnecting the traction battery and the power drive circuit, a voltage detector across contacts of the main contactor, and a controller for controlling the main contactor to prevent movement of its contacts to the closed position when the voltage across the contacts exceeds a predetermined threshold, to thereby protect the contacts of the contactor. The power drive circuit includes an electric traction motor and a DC-to-AC inverter with a capacitive input filter. The controller also inhibits the power drive circuit from driving the motor and thereby discharging the input capacitor if the contacts are inadvertently opened during motoring. A precharging contactor is controlled to charge the input filter capacitor prior to closing the main contactor to further protect the contacts of the main contactor. 3 figures.

  8. Electric vehicle drive train with contactor protection

    DOEpatents

    Konrad, Charles E.; Benson, Ralph A.

    1994-01-01

    A drive train for an electric vehicle includes a traction battery, a power drive circuit, a main contactor for connecting and disconnecting the traction battery and the power drive circuit, a voltage detector across contacts of the main contactor, and a controller for controlling the main contactor to prevent movement of its contacts to the closed position when the voltage across the contacts exceeds a predetermined threshold, to thereby protect the contacts of the contactor. The power drive circuit includes an electric traction motor and a DC-to-AC inverter with a capacitive input filter. The controller also inhibits the power drive circuit from driving the motor and thereby discharging the input capacitor if the contacts are inadvertently opened during motoring. A precharging contactor is controlled to charge the input filter capacitor prior to closing the main contactor to further protect the contacts of the main contactor.

  9. Exploiting Semiconductor to Metallic Phase Transformation in Layered Transition Metal Dichalcogenides for Ohmic contact Contacts

    NASA Astrophysics Data System (ADS)

    Kappera, Rajesh; Voiry, Damien; Jen, Wesley; Yalcin, Sibel Ebru; Gupta, Gautam; Mohite, Aditya; Chhowalla, Manish; Material Science department, Rutgers University, Piscataway, NJ, 08854, USA Team; CenterIntegrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87544, US Team

    2014-03-01

    Achieving ohmic contacts to transition metal dichalcogenides (MoS2, WS2, WSe2 and MoSe2) has been a challenge for researchers owing to the formation of a large Schottky barrier between metal and semiconductor. This results in low on-currents, mobilities and sub-threshold swings in the devices made with these materials. Here we report a universal strategy using chemical approach to reversibly transform the semiconducting phase (2H) to metallic phase (1T). Taking advantage of the metallic phase, we have fabricated hybrid transistors, which have 1T phase contacts and semiconducting 2H phase of the material as the channel. The metallic phase dramatically reduces the Schottky barrier between the metal and the semiconductor thereby mitigating the high contact resistance issues. This strategy should be applicable to several other applications such as catalysis, supercapacitors and batteries. Detailed synthesis, structural, electrical and optical characterization will be described.

  10. Electrical and Thermal Conductivity

    NASA Astrophysics Data System (ADS)

    Ventura, Guglielmo; Perfetti, Mauro

    After a Sect. 1.1 devoted to electrical conductivity and a section that deals with magnetic and dielectric losses ( 1.2 ), this chapter explores the theory of thermal conduction in solids. The examined categories of solids are: metals Sect. 1.3.2 , Dielectrics Sects. 1.3.3 and 1.3.4 and Nanocomposites Sect. 1.3.5 . In Sect. 1.3.6 the problem of thermal and electrical contact between materials is considered because contact resistance occurring at conductor joints in magnets or other high power applications can lead to undesirable electrical losses. At low temperature, thermal contact is also critical in the mounting of temperature sensors, where bad contacts can lead to erroneous results, in particular when superconductivity phenomena are involved.

  11. Contact dermatitis in printing tradesmen.

    PubMed

    Nethercott, J R; Nosal, R

    1986-05-01

    During a 2-year period in Toronto, Canada, 21 printing tradesmen with contact dermatitis were evaluated. 67% had allergic contact dermatitis; 29% due to ultraviolet-cured ink components. Irritant contact dermatitis accounted for 37% of the cases. The prognosis in printing tradesmen with contact dermatitis is guarded, except for those with allergic contact dermatitis due to UV-cured components, as the tradesmen who were sensitized to other contactants eventually left the trade. Offset lithography was associated with the problem in 18 of the 21 cases. A brief outline is given of the printing processes in common use.

  12. The Micromechanics of the Moving Contact Line

    NASA Technical Reports Server (NTRS)

    Lichter, Seth

    1999-01-01

    A transient moving contact line is investigated experimentally. The dynamic interface shape between 20 and 800 microns from the contact line is compared with theory. A novel experiment is devised, in which the contact line is set into motion by electrically altering the solid-liquid surface tension gamma(sub SL). The contact line motion simulates that of spontaneous wetting along a vertical plate with a maximum capillary number Ca approx. = 4 x 10(exp -2). The images of the dynamic meniscus are analyzed as a funtion of Ca. For comparison, the steady-state hydrodynamic equation based on the creeping flow model in a wedge geometry and the three-region uniform perturbation expansion of Cox (1986) is adopted. The interface shape is well depicted by the uniform solutions for Ca <= 10(exp -3). However, for Ca > 10(exp -3), the uniform solution over-predicts the viscous bending. This over-prediction can be accounted for by modifying the slip coefficient within the intermediate solution. With this correction, the measured interface shape is seen to match the theoretical prediction for all capillary numbers. The amount of slip needed to fit the measurements does not scale with the capillary number.

  13. Rugged Low-Resistance Contacts To High-Tc Superconductors

    NASA Technical Reports Server (NTRS)

    Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

    1992-01-01

    Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

  14. Rugged Low-Resistance Contacts To High-Tc Superconductors

    NASA Technical Reports Server (NTRS)

    Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

    1992-01-01

    Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

  15. Photon generation in ferromagnetic point contacts

    NASA Astrophysics Data System (ADS)

    Kadigrobov, A. M.; Shekhter, R. I.; Jonson, M.

    2012-12-01

    We show theoretically that a significant spin accumulation can occur in electric point contacts between two ferromagnetic electrodes with different magnetizations. Under appropriate conditions an inverse population of spin-split electronic levels results in stimulated emission of photons in the presence of a resonant electromagnetic field. The intensity of the emitted radiation can be several orders of magnitude higher than in typical semiconductor laser materials for two reasons. (1) The density of conduction electrons in a metal point contact is much larger than in semiconductors. (2) The strength of the coupling between the electron spins and the electromagnetic field that is responsible for the radiative spin-flip transitions is set by the magnetic exchange energy and can therefore be very large, as suggested by Kadigrobov et al. [Europhys. Lett. 67, 948 (2004)].

  16. Contact Whiskers for Millimeter Wave Diodes

    NASA Technical Reports Server (NTRS)

    Kerr, A. R.; Grange, J. A.; Lichtenberger, J. A.

    1978-01-01

    Several techniques are investigated for making short conical tips on wires (whiskers) used for contacting millimeter-wave Schottky diodes. One procedure, using a phosphoric and chromic acid etching solution (PCE), is found to give good results on 12 microns phosphor-bronze wires. Full cone angles of 60 degrees-80 degrees are consistently obtained, compared with the 15 degrees-20 degrees angles obtained with the widely used sodium hydroxide etch. Methods are also described for cleaning, increasing the tip diameter (i.e. blunting), gold plating, and testing the contact resistance of the whiskers. The effects of the whisker tip shape on the electrical resistance, inductance, and capacitance of the whiskers are studied, and examples given for typical sets of parameters.

  17. Temperature dependence of contact resistance at metal/MWNT interface

    SciTech Connect

    Lee, Sang-Eui; Moon, Kyoung-Seok; Sohn, Yoonchul

    2016-07-11

    Although contact resistance of carbon nanotube (CNT) is one of the most important factors for practical application of electronic devices, a study regarding temperature dependence on contact resistance of CNTs with metal electrodes has not been found. Here, we report an investigation of contact resistance at multiwalled nanotube (MWNT)/Ag interface as a function of temperature, using MWNT/polydimethylsiloxane (PDMS) composite. Electrical resistance of MWNT/PDMS composite revealed negative temperature coefficient (NTC). Excluding the contact resistance with Ag electrode, the NTC effect became less pronounced, showing lower intrinsic resistivity with the activation energy of 0.019 eV. Activation energy of the contact resistance of MWNT/Ag interface was determined to be 0.04 eV, two times larger than that of MWNT-MWNT network. The increase in the thermal fluctuation assisted electron tunneling is attributed to conductivity enhancement at both MWNT/MWNT and MWNT/Ag interfaces with increasing temperature.

  18. Neutron irradiation effects on metal-gallium nitride contacts

    SciTech Connect

    Katz, Evan J.; Lin, Chung-Han; Zhang, Zhichun; Qiu, Jie; Cao, Lei; Mishra, Umesh K.; Brillson, Leonard J.

    2014-03-28

    We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15} n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15} n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16} n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

  19. Contact resistance study of various metal electrodes with CVD graphene

    NASA Astrophysics Data System (ADS)

    Gahoi, Amit; Wagner, Stefan; Bablich, Andreas; Kataria, Satender; Passi, Vikram; Lemme, Max C.

    2016-11-01

    In this study, the contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying channel widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 °C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices.

  20. Electrical Generation.

    ERIC Educational Resources Information Center

    Science and Children, 1990

    1990-01-01

    Described are two activities designed to help children investigate electrical charges, electric meters, and electromagnets. Included are background information, a list of materials, procedures, and follow-up questions. Sources of additional information are cited. (CW)

  1. Electrical Generation.

    ERIC Educational Resources Information Center

    Science and Children, 1990

    1990-01-01

    Described are two activities designed to help children investigate electrical charges, electric meters, and electromagnets. Included are background information, a list of materials, procedures, and follow-up questions. Sources of additional information are cited. (CW)

  2. High current density contacts for photoconductive semiconductor switches

    SciTech Connect

    Baca, A.G.; Hjalmarson, H.P.; Loubriel, G.M.; McLaughlin, D.L.; Zutavern, F.J.

    1993-08-01

    The current densities implied by current filaments in GaAs photoconductive semiconductor switches (PCSS) are in excess of 1 MA/cm{sup 2}. As the lateral switches are tested repeatedly, damage accumulates at the contacts until electrical breakdown occurs across the surface of the insulating region. In order to improve the switch lifetime, the incorporation of n- and p-type ohmic contacts in lateral switches as well as surface geometry modifications have been investigated. By using p-type AuBe ohmic contacts at the anode and n-type AuGe ohmic contacts at the cathode, contact lifetime improvements of 5--10x were observed compared to switches with n-type contacts at both anode and cathode. Failure analysis on samples operated for 1--1,000 shots show that extensive damage still exists for at least one contact on all switches observed and that temperatures approaching 500{degrees}C are can be reached. However, the n-type AuGe cathode is often found to have no damage observable by scanning electron microscopy (SEM). The observed patterns of contact degradation indicate directions for future contact improvements in lateral switches.

  3. Rethinking contact lens aftercare.

    PubMed

    Efron, Nathan; Morgan, Philip B

    2017-09-01

    The evolution of contact lens technology and clinical practice over the past three decades has been remarkable, with dramatic improvements in material biocompatibility, better lens designs and care systems, and more flexible and convenient modalities of wear. However, our approach to the aftercare examination has remained conservative, with the general modus operandi having not fully evolved from the difficult, early years of fitting non-regular replacement rigid and low water content hydrogel lenses. In this paper, we review current aftercare practice and in particular, the preferred frequency that lens wearers should return for routine visits and the appropriateness of regulations governing contact lens prescription expiry. Four key clinical reasons for conducting a routine aftercare visit are identified: preserving ocular health, maintaining good vision, optimising comfort and ensuring satisfactory lens fitting performance. Commercial reasons for conducting aftercare visits are also considered. A decision matrix is presented to help practitioners decide on an appropriate time interval between routine aftercare visits. The first aftercare visit should always take place within one to two weeks of lens dispensing. After this, the following time intervals between routine aftercare visits are advised as a general guideline: soft daily disposable, 24 months; soft daily reusable and rigid daily wear, 12 months; soft and rigid extended wear, six months. These aftercare visit frequencies may need to be adjusted when rapid rates of refractive change are anticipated, such as every six months during child/teenager myopic progression and every 12 months during the advancement of presbyopia. Numerous clinical caveats for varying these recommended aftercare frequencies are also discussed. Those new to lens wear should be seen within the first two months of lens dispensing. Regulatory authorities charged with the responsibility of stipulating the validity of a contact

  4. Contact Control, Version 1

    SciTech Connect

    von Sternberg, Alex

    2016-07-21

    The contact control code is a generalized force control scheme meant to interface with a robotic arm being controlled using the Robot Operating System (ROS). The code allows the user to specify a control scheme for each control dimension in a way that many different control task controllers could be built from the same generalized controller. The input to the code includes maximum velocity, maximum force, maximum displacement, and a control law assigned to each direction and the output is a 6 degree of freedom velocity command that is sent to the robot controller.

  5. Contact dermatitis to methylisothiazolinone*

    PubMed Central

    Scherrer, Maria Antonieta Rios; Rocha, Vanessa Barreto; Andrade, Ana Regina Coelho

    2015-01-01

    Methylisothiazolinone (MI) is a preservative found in cosmetic and industrial products. Contact dermatitis caused by either methylchloroisothiazolinone/methylisothiazolinone (MCI/MI or Kathon CG) or MI has shown increasing frequency. The latter is preferably detected through epicutaneous testing with aqueous MI 2000 ppm, which is not included in the Brazilian standard tray. We describe a series of 23 patients tested using it and our standard tray. A case with negative reaction to MCI/MI and positive to MI is emphasized. PMID:26734880

  6. Contact dermatitis in Nigeria.

    PubMed

    Olumide, Y M

    1985-05-01

    Nickel is the most important sensitizer in Lagos, with an incidence of 12.3% of 453 patients tested. There was no sex difference, as the wearing of necklaces and bracelets was equally fashionable among both sexes. Housewife eczema is not common, probably because of hardening. Dermatitis from additives in the processing of leather and rubber footwear was the next most common. Chromate sensitivity comes usually from leather or cement. Cultural and climatic factors are mainly responsible for differences in the incidence of contact dermatitis found in Lagos from other countries.

  7. Adhesion in hydrogel contacts

    NASA Astrophysics Data System (ADS)

    Torres, J. R.; Jay, G. D.; Kim, K.-S.; Bothun, G. D.

    2016-05-01

    A generalized thermomechanical model for adhesion was developed to elucidate the mechanisms of dissipation within the viscoelastic bulk of a hyperelastic hydrogel. Results show that in addition to the expected energy release rate of interface formation, as well as the viscous flow dissipation, the bulk composition exhibits dissipation due to phase inhomogeneity morphological changes. The mixing thermodynamics of the matrix and solvent determines the dynamics of the phase inhomogeneities, which can enhance or disrupt adhesion. The model also accounts for the time-dependent behaviour. A parameter is proposed to discern the dominant dissipation mechanism in hydrogel contact detachment.

  8. Adhesive Contact Sweeper

    NASA Technical Reports Server (NTRS)

    Patterson, Jonathan D.

    1993-01-01

    Adhesive contact sweeper removes hair and particles vacuum cleaner leaves behind, without stirring up dust. Also cleans loose rugs. Sweeper holds commercially available spools of inverted adhesive tape. Suitable for use in environments in which air kept free of dust; optics laboratories, computer rooms, and areas inhabited by people allergic to dust. For carpets, best used in tandem with vacuum cleaner; first pass with vacuum cleaner removes coarse particles, and second pass with sweeper extracts fine particles. This practice extends useful life of adhesive spools.

  9. Adhesion in hydrogel contacts.

    PubMed

    Torres, J R; Jay, G D; Kim, K-S; Bothun, G D

    2016-05-01

    A generalized thermomechanical model for adhesion was developed to elucidate the mechanisms of dissipation within the viscoelastic bulk of a hyperelastic hydrogel. Results show that in addition to the expected energy release rate of interface formation, as well as the viscous flow dissipation, the bulk composition exhibits dissipation due to phase inhomogeneity morphological changes. The mixing thermodynamics of the matrix and solvent determines the dynamics of the phase inhomogeneities, which can enhance or disrupt adhesion. The model also accounts for the time-dependent behaviour. A parameter is proposed to discern the dominant dissipation mechanism in hydrogel contact detachment.

  10. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2000-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  11. Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts

    DOEpatents

    Jansen, Kai W.; Maley, Nagi

    2001-01-01

    High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate. During production, the transparent conductive oxide layer of the front contact is scribed by a laser, then the amorphous silicon-containing semiconductors and inner layer of the dual layer back contact are simultaneously scribed and trenched (drilled) by the laser and the trench is subsequently filled with the same metal as the outer layer of the dual layer back contact to provide a superb mechanical and electrical interconnect between the front contact and the outer layer of the dual layer back contact. The outer layer of the dual layer back contact can then be scribed by the laser. For enhanced environmental protection, the photovoltaic modules can be encapsulated.

  12. Electric cars

    SciTech Connect

    Worsnop, R.L.

    1993-07-09

    This article is devoted entirely to the subject of electric cars. Some of the topics covered are alternate fuels in relation to development of electric cars, the impact of zero-emission laws, the range and performance of electric cars, historical aspects, legislative incentives, and battery technology.

  13. Contact Lenses in the Laboratory.

    ERIC Educational Resources Information Center

    Kingston, David W.

    1981-01-01

    Summarizes results of a three-item questionnaire returned by 43 Michigan institutions expressing views on wearing contact lenses in chemical laboratories. Questions focused on eye protection, type of protection, and use of contact lenses. (SK)

  14. Contact Analysis of Nominally Flat Surfaces

    DTIC Science & Technology

    2008-06-01

    researchers, Abdo and Farhang [7]. The work began with a literature survey which discussed the work of Greenwood and Williamson and the downfalls of Hertz...Electrical Conductivity γ N or m al iz ed E le ct ric al C on du ct iv ity 1.3 1.4 1.5 1.7 1.9 0.9 1 1.1 1.2 Temperature γ N or m al iz ed T em pe...40 (21 July 2007), pp. 4245-4252. [7] J. Abdo and K. Farhang, “Elastic-Plastic Contact Model for Rough Surfaces Based on Plastic Asperity

  15. Photoresponse of silicon with asymmetric area contacts

    NASA Astrophysics Data System (ADS)

    Rabbani, M. Golam; Sundararajan, Jency P.; Verma, Amit; Nekovei, Reza; Khader, Mahmoud M.; Darling, R. B.; Patil, Sunil R.

    2017-01-01

    We report on high performance metal-semiconductor-metal (MSM) photosensors based on asymmetric metal pad areas. The reported devices require a single-step metal deposition, and exhibit large photo response even under zero-bias. Moreover the devices offer fast and stable light switching behavior. Device fabrication and electrical characterization results are presented that are further analyzed with TCAD modeling and simulation. Device simulations show that contact asymmetry along with surface recombination and barrier lowering plays an important role in the MSM I-V characteristics.

  16. Schottky and ohmic contacts to silicon carbide with device applications

    NASA Astrophysics Data System (ADS)

    Luckowski, Eric David

    Fabrication and electrical characterization of Schottky and ohmic contacts to silicon carbide (SiC) are examined in this work. Silicon carbide exhibits improved performance over silicon in high power, high frequency, high temperature, and radiation intensive applications. Unlike silicon, however, the quality of commercially available SiC has improved dramatically in the last decade. Therefore, initial analysis identifies a wide range of electrical behavior in Schottky diodes. The Schottky barrier height was measured using four distinct techniques: the standard thermionic emission I-V method the Norde plot method, the activation energy method, and from the temperature dependence of reverse characteristics. Thermionic emission theory predicts reverse leakage currents that are incommensurate with measured values at room temperature, but in closer agreement at higher temperatures. The technique of plotting the ideality factor as a function of forward voltage (ideality profiling) is used to identify possible current mechanisms responsible for the range of behavior in the electrical characteristics. Non-ideal behavior could be identified in the ideality proNe by the presence of peaks, which became dimini hed at increasing temperatures, indicating that non-thermionic conduction dominates reverse leakage currents at room temperature. These peaks were also observed ta diminish by Ar implantation of material surrounding the contacts. This method of implantation is also employed in a study of the thermal stability of the Ni-SiC contact. Reverse leakage current, Schottky barrier height and physical stability were examined for long-term anneals at 300sp° C. Electrical behavior of ideal contacts and physical analysis demonstrate good stability for 9000 hours of thermal stressing. Argon implantation appears to improve the reliability of this contact. Ohmic contacts on n-type SiC were produced using nickel silicide, with both Ni and nichrome as starting materials. Test structures

  17. Optical interferometry study of film formation in lubrication of sliding and/or rolling contacts

    NASA Technical Reports Server (NTRS)

    Stejskal, E. O.; Cameron, A.

    1972-01-01

    Seventeen fluids of widely varying physical properties and molecular structure were chosen for study. Film thickness and traction were measured simultaneously in point contacts by interferometry, from which a new theory of traction was proposed. Film thickness was measured in line contacts by interferometry and electrical capacitance to establish correlation between these two methods. An interferometric method for the absolute determination of refractive index in the contact zone was developed and applied to point contact fluid entrapments. Electrical capacitance was used to study the thickness and properties of the soft surface film which sometimes forms near a metal-fluid interface.

  18. Polyurethane toilet seat contact dermatitis.

    PubMed

    Turan, Hakan; Saricaoğlu, Hayriye; Turan, Ayşegül; Tunali, Sükran

    2011-01-01

    Polyurethane chemicals are produced by the reaction of isocyanates and they may cause allergic contact dermatitis or precipitate asthma attacks. Contact dermatitis to polyurethane toilet seat has not been reported before. Herein we present a case of allergic contact dermatitis to polyurethane toilet seat.

  19. Dynamic contact angle analysis of silicone hydrogel contact lenses.

    PubMed

    Read, Michael Leonard; Morgan, Philip Bruce; Kelly, Jeremiah Michael; Maldonado-Codina, Carole

    2011-07-01

    Contact angle measurements are used to infer the clinical wetting characteristics of contact lenses. Such characterization has become more commonplace since the introduction of silicone hydrogel contact lens materials, which have been associated with reduced in vivo wetting due to the inclusion of siloxane-containing components. Using consistent methodology and a single investigator, advancing and receding contact angles were measured for 11 commercially available silicone hydrogel contact lens types with a dynamic captive bubble technique employing customized, fully automated image analysis. Advancing contact angles were found to range between 20° and 72° with the lenses falling into six statistically discrete groupings. Receding contact angles fell within a narrower range, between 17° and 22°, with the lenses segregated into three groups. The relationship between these laboratory measurements and the clinical performance of the lenses requires further investigation.

  20. Contact position sensor using constant contact force control system

    NASA Technical Reports Server (NTRS)

    Sturdevant, Jay (Inventor)

    1995-01-01

    A force control system (50) and method are provided for controlling a position contact sensor (10) so as to produce a constant controlled contact force therewith. The system (50) includes a contact position sensor (10) which has a contact probe (12) for contacting the surface of a target to be measured and an output signal (V.sub.o) for providing a position indication thereof. An actuator (30) is provided for controllably driving the contact position sensor (10) in response to an actuation control signal (I). A controller (52) receives the position indication signal (V.sub.o) and generates in response thereto the actuation control signal (I) so as to provide a substantially constant selective force (F) exerted by the contact probe (12). The actuation drive signal (I) is generated further in response to substantially linear approximation curves based on predetermined force and position data attained from the sensor (10) and the actuator (30).