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Sample records for cuin gase2 thin

  1. Control of the thin film properties of Cu(In ,Ga)Se2 using water vapor introduction during growth

    NASA Astrophysics Data System (ADS)

    Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru; Yonemura, Minoru; Nakanishi, Hisayuki

    2006-11-01

    The effects of water vapor introduction during growth on Cu(In ,Ga)Se2 (CIGSe) thin film properties, specifically the electrical and photoluminescence (PL) properties have been studied. Increases in the hole carrier density and conductivity with water vapor introduction were observed for all [Ga]/[In+Ga] composition ratios. The PL spectra observed from CuGaSe2 (CGSe) showed an annihilation of deep donor-acceptor pair emissions related to Se vacancies with water vapor introduction. In addition, the Na content in the CIGSe layers as well as the O content was found to increase. These results suggest that the mechanism behind the variation observed in the electrical and PL properties and consequent cell improvement is largely attributable to a decrease in the Se-vacancies-induced donor defect density and an enhancement of Na effects.

  2. Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In, Ga)Se2 thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Lu, Ming; Xu, Jing; Huang, Jian-Wei

    2016-09-01

    The lowest energies which make Cu, In, Ga, and Se atoms composing Cu(In, Ga)Se2 (CIGS) material displaced from their lattice sites are evaluated, respectively. The non-ionizing energy loss (NIEL) for electron in CIGS material is calculated analytically using the Mott differential cross section. The relation of the introduction rate (k) of the recombination centers to NIEL is modified, then the values of k at different electron energies are calculated. Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers. The validity of the modeling approach is verified by comparison with the experimental data. Project supported by the National Natural Science Foundation of China (Grant No. 11547151).

  3. Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In ,Ga)Se2 thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Lei, C. H.; Rockett, A. A.; Robertson, I. M.; Papathanasiou, N.; Siebentritt, S.

    2006-12-01

    Cu(In1-xGax)Se2 (CIGS) films were grown on (001) GaAs at 570 or 500°C by means of metal organic vapor-phase epitaxy. All films were Cu-rich [Cu /(In+Ga)>1] with pseudomorphic Cu2Se second phase particles found only on the growth surface. During growth, diffusion of Ga from the substrate and vacancies generated by the formation of CIGS from Cu2Se at the surface occurred. The diffusion processes lead to the formation of Kirkendall voids at the GaAs/CIGS interface. Transmission electron microscopy and nanoprobe energy dispersive spectroscopy were used to analyze the diffusion and void formation processes. The diffusivity of Ga in CIGS was found to be relatively low. This is postulated to be due to a comparatively low concentration of point defects in the epitaxial films. A reaction model explaining the observed profiles and voids is proposed.

  4. Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films.

    PubMed

    Nicoara, N; Lepetit, Th; Arzel, L; Harel, S; Barreau, N; Sadewasser, S

    2017-01-27

    Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT.

  5. Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films

    PubMed Central

    Nicoara, N.; Lepetit, Th.; Arzel, L.; Harel, S.; Barreau, N.; Sadewasser, S.

    2017-01-01

    Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT. PMID:28128351

  6. Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Nicoara, N.; Lepetit, Th.; Arzel, L.; Harel, S.; Barreau, N.; Sadewasser, S.

    2017-01-01

    Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT.

  7. Substrate temperature optimization for Cu(In, Ga)Se2 solar cells on flexible stainless steels

    NASA Astrophysics Data System (ADS)

    Liang, X.; Zhu, H.; Chen, J.; Zhou, D.; Zhang, C.; Guo, Y.; Niu, X.; Li, Z.; Mai, Y.

    2016-04-01

    Cu(In, Ga)Se2 (CIGS) thin films are deposited on flexible stainless steel (SS) substrates using the so called 3-stage co-evaporation process at different substrate temperatures ranging from 440 °C to 640 °C during the 2nd stage and the 3rd stage (TS2). The effects of TS2 on the properties of CIGS thin films are systematically investigated. It is found by secondary ion mass spectrometry measurement that CIGS thin films deposited at different TS2 show different Ga/(Ga + In) ratio (GGI) profiles along the growth direction. High TS2 facilitates the grain growth and leads to larger grain size. However, high TS2 worsens the spectral response of CIGS solar cells in the long wavelength range, which is partly attributed to the too much iron atom diffusion from the SS substrates into the CIGS thin films. All CIGS thin films show (112) preferred orientations with a shift to higher angle due to variation of compositions. A shoulder-like two-peak structure of (112) and (220/204) peaks appears for CIGS thin films deposited at lower TS2. Conversion efficiency of 11.3% is obtained for CIGS thin film solar cells deposited at the TS2 of 500 °C.

  8. Detection of Matrix Elements and Trace Impurities in Cu(In, Ga)Se2 Photovoltaic Absorbers Using Surface Analytical Techniques.

    PubMed

    Kim, Min Jung; Lee, Jihye; Kim, Seon Hee; Kim, Haidong; Lee, Kang-Bong; Lee, Yeonhee

    2015-10-01

    Chalcopyrite Cu(In, Ga)Se2 (CIGS) thin films are well known as the next-generation solar cell materials notable for their high absorption coefficient for solar radiation, suitable band gap, and ability for deposition on flexible substrate materials, allowing the production of highly flexible and lightweight solar panels. To improve solar cell performances, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is much needed. In this study, Cu(In, Ga)Se2 thin films were prepared on molybdenum back contacts deposited on soda-lime glass substrates via three-stage evaporation. Surface analyses via AES and SIMS were used to characterize the CIGS thin films and compare their depth profiles. We determined the average concentration of the matrix elements, Cu, In, Ga, and Se, using ICP-AES, XRF, and EPMA. We also obtained depth profiling results using TOF-SIMS, magnetic sector SIMS and AES, and APT, a sub-nanometer resolution characterization technique that enables three-dimensional elemental mapping. The SIMS technique, with its high detection limit and ability to obtain the profiles of elements in parallel, is a powerful tool for monitoring trace elements in CIGS thin films. To identify impurities in a CIGS layer, the distribution of trace elements was also observed according to depth by SIMS and APT.

  9. Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se2 solar modules

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaobo; Cheng, Tzu-Huan; Liu, Chee Wee

    2016-07-01

    The fluctuation of Ga content and absorption layer thickness of Cu(In, Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numerical simulation. The band gap of CIGS is increased by the increasing Ga content, and the residual compressive strain. Strain effect worsens the degradation of the power conversion efficiency of CIGS module in addition to Ga fluctuation. The intracell Ga fluctuation degrades the open circuit voltage due to the minimum open circuit voltage in the parallel configuration, and also affects the short circuit current due to the Ga-dependent light absorption. The intercell Ga fluctuation leads to a more significant degradation for CIGS solar module efficiency than the intracell Ga fluctuation due to the additional degradation of the fill factor. The thickness fluctuation has a small effect on open circuit voltage, but causes strong degradation of short circuit current and fill factor, which leads to a more significant degradation on power conversion efficiency than Ga fluctuation to the same fluctuation percentage. In reality, the thickness can be tightly controlled within the fluctuation of 5% or less. [Figure not available: see fulltext.

  10. Synthesis and characterization of Cu(In, Ga)Se2 absorption/scattering layers by electrodeposition method

    NASA Astrophysics Data System (ADS)

    Jeong, Soochang; Choi, Hyonkwang; Hwang, Junghwan; Park, Juntae; Im, Ki Hong; Jung, Yongil; Jeon, Minhyon

    2013-11-01

    We propose a Cu(In, Ga)Se2 double absorption layer structure with both absorption and scattering effects. We synthesized CIGS absorption layers by electro-deposition using different electrical potentials. Structural properties were characterized by x-ray diffraction and field-emission scanning electron microscopy. Optical properties were measured using UV/VIS spectrometry. Grain size and surface roughness were controlled by manipulation of the electrical potential. From these results, the currently typical, single CIGS absorption layer, was replaced with two CIGS layers: a top CIGS layer of smaller grain size and a bottom CIGS layer of larger grain size. We found that the larger-grain CIGS layer provides better scattering effect, so that the CIGS double layer structure provides enhanced light absorption performance in visible light. By applying this new CIGS double layer structure, it is expected that conversion efficiency will be increased.

  11. Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

    SciTech Connect

    Mansfield, Lorelle M.; Kuciauskas, Darius; Dippo, Patricia; Li, Jian V.; Bowers, Karen; To, Bobby; DeHart, Clay; Ramanathan, Kannan

    2015-06-14

    Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

  12. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    NASA Astrophysics Data System (ADS)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  13. Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Cheng, Ke; Han, Kaikai; Kuang, Zhongcheng; Jin, Ranran; Hu, Junxia; Guo, Longfei; Liu, Ya; Lu, Zhangbo; Du, Zuliang

    2017-04-01

    In this work, CuInGa alloy precursor films are fabricated by co-sputtering of CuIn and CuGa targets simultaneously. After selenization in a tube-type rapid thermal annealing system under a Se atmosphere, the Cu(In, Ga)Se2 (CIGS) absorber layers are obtained. Standard soda lime glass (SLG)/Mo/CIGS/CdS/i-ZnO/ITO/Ag grid structural solar cells are fabricated based on the selenized CIGS absorbers. The influences of selenization temperatures on the composition, crystallinity, and device performances are systematically investigated by x-ray energy dispersive spectroscopy, x-ray diffraction, Raman spectroscopy, and the current density-voltage ( J- V) measurement. It is found that the elemental ratio of Cu/(In + Ga) strongly depends on the selenization temperatures. Because of the appropriate elemental ratio, a 9.92% conversion efficiency is reached for the CIGS absorber selenized at 560°C. After the additional optimization by pre-annealing treatment at 280°C before the selenization, a highest conversion efficiency of 11.19% with a open-circuit ( V oc) of 456 mV, a short-circuit ( J sc) of 40.357 mA/cm2 and a fill factor of 60.82% without antireflection coating has been achieved. Above 13% efficiency improvement was achievable. Our experimental findings presented in this work demonstrate that the post-selenization of co-sputtered CuIn and CuGa precursor is a promising way to fabricate high quality CIGS absorbers.

  14. Synchrotron X-Ray Characterization of Alkali Elements at Grain Boundaries in Cu(In, Ga)Se2 Solar Cells

    SciTech Connect

    West, Bradley; Stuckelberger, Michael; Guthrey, Harvey; Chen, Lei; Lai, Barry; Maser, Jorg; Rose, Volker; Dynes, James J.; Shafarman, William; Al-Jassim, Mowafak; Bertoni, Mariana I.

    2016-11-21

    It is well known that the addition of alkali elements such as Na and K during and after growth of Cu(In, Ga)Se2 (CIGS) has beneficial effects on the electronic properties of bulk material, improving device performance significantly. While the device level effects have been measured and reported, a direct observations of the localization of Na including its chemical nature are missing, and the impact of Na on elemental and phase segregation during CIGS growth is not fully understood. We investigate these aspects to shine light on the role of Na in CIGS solar cells with the ultimate goal of increasing their conversion efficiency. Utilizing a suite of synchrotron based x-ray characterization techniques, we discuss the challenges and advantages of these techniques for investigating segregation of main constituents of CIGS, Na distribution, chemical bonding of Na, and collection efficiency in CIGS as well as their correlations.

  15. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy.

    PubMed

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-12-18

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.

  16. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy

    PubMed Central

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-01-01

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells. PMID:26679958

  17. Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution

    SciTech Connect

    Xiao, Chuanxiao; Jiang, Chun-Sheng; Moutinho, Helio; Levi, Dean; Yan, Yanfa; Gorman, Brian; Al-Jassim, Mowafak

    2016-11-21

    We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.

  18. Physical Vapor Deposition of Hexagonal and Tetragonal CuIn5Se8 Thin Films

    NASA Astrophysics Data System (ADS)

    Kohara, Naoki; Nishiawaki, Shiro; Negami, Takayuki; Wada, Takahiro

    2000-11-01

    Hexagonal and tetragonal CuIn5Se8 thin films have been successfully prepared by physical vapor deposition. A hexagonal CuIn5Se8 thin film was obtained via the reaction of (Cu+Se) and (In+Se) layers. This hexagonal film had a layered structure with a lattice spacing of approximately 16 Å, corresponding to fivefold close-packed stacking of Se. With an alternative deposition process using (CuInSe2) and (In2Se3) layers, a tetragonal CuIn5Se8 thin film was obtained. The tetragonal film had a columnar structure with a lattice spacing of 3.3 Å, corresponding to the cubic close-packed stacking of Se. As evident from examination of the Cu2Se-In2Se3 pseudo-binary system phase diagram, hexagonal CuIn5Se8 is a stable phase and tetragonal CuIn5Se8 is metastable. The growth mechanism of the hexagonal and tetragonal phase CuIn5Se8 thin films is discussed from a crystallographic point of view.

  19. Thin Film CuInS2 Prepared by Spray Pyrolysis with Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Cowen, Jonathan E.; Hepp, Aloysius F.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.

  20. Synthesis of CuInS2 thin films by spray pyrolysis deposition system

    NASA Astrophysics Data System (ADS)

    Hussain, K. M. A.; Podder, J.; Saha, D. K.

    2013-02-01

    Copper indium disulfide (CuInS2) thin films were deposited on the glass substrate by the locally made spray pyrolysis deposition system. The films were characterized by using energy dispersive analytical X-ray (EDAX) spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-VIS-NIR spectrophotometry. The XRD pattern indicated that the prepared CuInS2 thin films are chalcopyrite structure. Lattice parameters and FWHM values were verified by the standard values of JCPDS 270159 file. The EDAX analysis indicated the stoichiometric ratio of 1.14:1:1.88 (CIS-2) thin films. The SEM analysis showed that the average grain size of the film was 100-800 nm and that of XRD data indicate the values of 30-50 nm. The high absorption co-efficient and 1.48 eV band gap of the films indicate that the films are useful as an absorber for photovoltaic application in the solar cell.

  1. Surface modifications of chalcopyrite CuInS2 thin films for photochatodes in photoelectrochemical water splitting under sunlight irradiation

    NASA Astrophysics Data System (ADS)

    Gunawan; Haris, A.; Widiyandari, H.; Septina, W.; Ikeda, S.

    2017-02-01

    Copper chalcopyrite semiconductors include a wide range of compounds that are of interest for photoelectrochemical water splitting which enables them to be used as photochatodes for H2 generation. Among them, CuInS2 is one of the most important materials due to its optimum band gap energy for sunlight absorption. In the present study, we investigated the application of CuInS2 fabricated by electrodeposition as photochatodes for water splitting. Thin film of CuInS2 chalcopyrite was formed on Mo-coated glass substrate by stacked electrodeposition of copper and indium followed by sulfurization under H2S flow. The films worked as a H2 liberation electrode under cathodic polarization from a solution containing Na2SO4 after loading Pt deposits on the film. Introduction of an n-type CdS layer by chemical bath deposition on the CuInS2 surface before the Pt loading resulted appreciable improvements of H2 liberation efficiency and a higher photocurrent onset potential. Moreover, the use of In2S3 layer as an alternative n-type layer to the CdS significantly improved the H2 liberation performance: the CuInS2 film modified with In2S3 and Pt deposits worked as an efficient photocathode for photoelectrochemical water splitting.

  2. Synthesis of nanostructured CuInS2 thin films and their application in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Luo, Fazhi; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang; Liu, Jun

    2016-03-01

    CuInS2 (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of "nanosheet array" and "flower-like microsphere" were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS2 nanostructure competitive as counter electrode in DSSCs.

  3. Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.

    PubMed

    Sun, Qian; Kim, Kyoung-Bo; Jeon, Chan-Wook

    2016-05-01

    Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias.

  4. Investigation of Sb-Containing Precursors for Cu(In, Ga)Se2 Thin Films Through Design of Experiments

    SciTech Connect

    Mansfield, Lorelle M.; To, Bobby; Reedy, Robert C.; Young, Matthew R.; Bowers, Karen; Ramanathan, Kannan

    2016-11-21

    The Design of Experiments (DoE) module in JMP statistical software was used to determine the best parameters for Sb-containing CIGS precursors with a fixed selenization step. Solar cells were fabricated and measured for all completed films. The most important factor influencing the current-voltage device parameters was identified as the temperature and antimony flux interaction. The DoE prediction profiler and predictive contour plots provided guidance to further improve the device parameters. In one follow-up run, we increased device efficiency from 14.9% to 15.5% Additional gains in efficiency to 16.9% were realized by introducing an intentional Ga gradient and an antireflective coating.

  5. CuInS 2 thin films obtained through the annealing of chemically deposited In 2S 3-CuS thin films

    NASA Astrophysics Data System (ADS)

    Peña, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vázquez, A.; Gómez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2S 3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  6. Deposition of ultra thin CuInS2 absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C)

    NASA Astrophysics Data System (ADS)

    Schneider, Nathanaelle; Bouttemy, Muriel; Genevée, Pascal; Lincot, Daniel; Donsanti, Frédérique

    2015-02-01

    Two new processes for the atomic layer deposition of copper indium sulfide (CuInS2) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl3) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS2 stoechiometry was only achieved by depositing In2S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)2, In(acac)3) allows the direct deposition of CuInS2 at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.

  7. Structural and morphological characterization of ternary nanocrystalline Cu-In-S thin films prepared by laser ablation

    NASA Astrophysics Data System (ADS)

    Bineva, I.; Pejova, B.; Mihailov, V.; Dinescu, A.; Danila, M.; Karatodorov, S.

    2017-01-01

    Thin nanocrystalline Cu-In-S films are prepared by pulsed laser ablation in vacuum with Nd:YAG laser operating at 1064 nm on Si (100) substrates. As a target, a CuInS2 quantum dots powder, synthesized by sonochemical template-free colloidal approach and pressed to form a pellet is used. The structure and morphology of the deposited films were studied employing X-ray diffraction, scanning electron microscopy, and atomic force microscopy techniques. The analysis of the deposited thin films revealed predominant cubic Cu1.7In0.05S phase. It has been found that deposited films were nanocrystalline. The effect of laser pulse energy and deposition time on the structure and morphology of as-prepared films is studied. Slight mean diameter increase from 8 nm to 13 nm with deposition time and applied power was observed, as the time dependence is more pronounced. On the contrary, six fold increase from 7.4 to 44.3 nm of the surface root mean square roughness was estimated with augmentation of the applied laser pulse energy.

  8. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  9. Composition Control of CuInSe2 Thin Films Using Cu/In Stacked Structure in Coulometric Controlled Electrodeposition Process.

    PubMed

    Kwon, Yong Hun; Do, Hyun Woo; Kim, Hyoungsub; Cho, Hyung Koun

    2015-10-01

    Cu/In bi-metal stacked structures were prepared on Mo coated soda lime glass substrates using electrodeposition method. These metallic precursors were selenized at 550 °C for 60 min to synthesize the CuInSe2 (CIS) thin films in a thermal evaporator chamber with an Se overpressure atmosphere. The composition ratios of CIS thin films were systematically controlled using the coulometric method of the electrodeposition, where the accumulated coulomb of In layers was varied from 1062 to 6375 mC/cm2. As a result, the stoichiometric CIS film was obtained in the Cu/In coulomb ratio of 0.6. Highly crystallized CIS films were produced from the liquid Cu-Se phase in the Cu/In coulomb ratio of ≥0.6. In contrast, the crystallinity and grain size were degraded in the In-rich region. We found that the Cu/In composition ratio of CIS films was linearly proportional to the precursor thickness determined by the coulomb ratio.

  10. Photon induced facile synthesis and growth of CuInS2 absorber thin film for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Singh, Manjeet; Jiu, Jinting; Suganuma, Katsuaki

    2016-04-01

    In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS2 (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In2S3 to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm2 is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

  11. Surface modifications of Cu(In ,Ga)S2 thin film solar cell absorbers by KCN and H2O2/H2SO4 treatments

    NASA Astrophysics Data System (ADS)

    Weinhardt, L.; Fuchs, O.; Groß, D.; Umbach, E.; Heske, C.; Dhere, N. G.; Kadam, A. A.; Kulkarni, S. S.

    2006-07-01

    KCN etching of the CuxS surface layer formed during the production process of Cu(In ,Ga)S2 thin film solar cell absorbers as well as subsequent H2O2/H2SO4 etching of the Cu(In ,Ga)S2 surface have been investigated using x-ray photoelectron spectroscopy, x-ray excited Auger electron spectroscopy, and x-ray emission spectroscopy. We find that the KCN etching removes the CuxS layer—being identified as Cu2S—and that there is K deposited during this step, which is removed by the subsequent H2O2/H2SO4 oxidation treatment. When a CdS buffer layer is deposited on the absorber directly after KCN etching, a K compound (KCO3) is observed at the CdS surface.

  12. High efficiency thin-film CuIn1-xGaxSe2 photovoltaic cells using a Cd1-xZnxS buffer layer

    NASA Astrophysics Data System (ADS)

    Bhattacharya, R. N.; Contreras, M. A.; Egaas, B.; Noufi, R. N.; Kanevce, A.; Sites, J. R.

    2006-12-01

    The authors have fabricated 19.52% thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices using single layer chemical bath deposited Cd1-xZnxS (CdZnS) buffer layer. The efficiency equals the world record for any thin-film solar cell and is achieved with reduced optical absorption in the window layer. Using current-voltage, quantum efficiency, and capacitance-voltage measurements, the CIGS/CdZnS device parameters are directly compared with those of CIGS/CdS devices fabricated with equivalent absorbers.

  13. Rapid growth of nanocrystalline CuInS 2 thin films in alkaline medium at room temperature

    NASA Astrophysics Data System (ADS)

    Roh, Seung Jae; Mane, Rajaram S.; Pathan, Habib M.; Joo, Oh-Shim; Han, Sung-Hwan

    2005-12-01

    Layer-by-layer (LbL) deposition of CuInS 2 (CIS) thin films at room temperature (25 °C) from alkaline CuSO 4 + In 2(SO 4) 3 and Na 2S precursor solutions was reported. The method allowed self-limited growth of CIS films with nanocrystalline structure and composed of densely packed nanometer-sized grains. The as-deposited CIS film was 250 nm thick and composed of closely packed particles of 20-30 nm in diameter. The alkaline cationic precursor solution was obtained by dissolving CuSO 4 and InSO 4 in deionized water with a appropriate amount of hydrazine monohydrate (H-H) and 2,2',2″-nitrilotriethanol (TEA). CIS films were annealed at 200 °C for 2 h and effect of annealing on structural, optical, and surface morphological properties was thoroughly investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, UV-vis spectrometer, C-V, and water contact angle techniques, respectively.

  14. Transport properties of CuIn(1-x)Al(x)Se2/AZnO heterostructure for low cost thin film photovoltaics.

    PubMed

    Murali, Banavoth; Krupanidhi, S B

    2014-02-07

    CuIn(1-x)Al(x)Se2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (ΔSO) and crystal field (ΔCF) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn(1-x)Al(x)Se2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A.M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 × 10(-3) A in the dark at 1 V to 3 × 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity Rλ ~ 920 A W(-1), sensitivity S ~ 9.0, specific detectivity D* ~ 3 × 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

  15. A Comprehensive Study of One-Step Selenization Process for Cu(In1-x Ga x )Se2 Thin Film Solar Cells.

    PubMed

    Chen, Shih-Chen; Wang, Sheng-Wen; Kuo, Shou-Yi; Juang, Jenh-Yih; Lee, Po-Tsung; Luo, Chih Wei; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2017-12-01

    In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1-x Ga x Se2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.

  16. A Comprehensive Study of One-Step Selenization Process for Cu(In1- x Ga x )Se2 Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Chen, Shih-Chen; Wang, Sheng-Wen; Kuo, Shou-Yi; Juang, Jenh-Yih; Lee, Po-Tsung; Luo, Chih Wei; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2017-03-01

    In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1- x Ga x Se2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage ( J- V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.

  17. Influence of substrate and its temperature on the optical constants of CuIn1-xGaxSe2 thin films

    NASA Astrophysics Data System (ADS)

    Yin, G.; Manley, P.; Schmid, M.

    2014-04-01

    We investigate the influence of substrate and its temperature on the optical constants of CuIn1-xGaxSe2 (CIGSe) thin films using the transfer-matrix method. The optical constants of a CIGSe layer on top of a transparent conducting oxide (TCO) layer were calculated considering the realistic optical constants of the TCO layer after CIGSe deposition. It was found that TCO substrates could influence the optical constants of CIGSe layers and that the ITO (Sn doped In2O3) substrate had a greater impact than IMO (Mo doped In2O3) for the CIGSe (x = 0.4) film when compared to a reference on bare glass substrate. Additionally, the varied substrate temperatures did not impact the optical constants of CGSe (x = 1). For CIGSe (x = 0.4), the refractive index n stayed relatively independent although at low temperature the grain size was reduced and the Ga/(Ga+In) profile was altered compared to that at high temperature (610 °C). In contrast, the extinction coefficient k at low temperature showed higher absorption at longer wavelengths because of a lower minimum bandgap (Eg,min) originating from reduced inter-diffusion of Ga-Se at a low substrate temperature.

  18. Effects of water vapor introduction during Cu(In1-x Gax )Se2 deposition on thin film properties and solar cell performance

    NASA Astrophysics Data System (ADS)

    Ishizuka, S.; Sakurai, K.; Yamada, A.; Matsubara, K.; Shibata, H.; Yonemura, M.; Nakamura, S.; Nakanishi, H.; Kojima, T.; Niki, S.

    2006-09-01

    The effects of water vapor introduction during the growth of Cu(In1-x Gax )Se2, specifically CuInSe2 (CISe), Cu(In,Ga)Se2 (CIGSe), and CuGaSe2 (CGSe) thin films were studied. We have developed thus far a novel technique to improve CIGSe (x 0.5) cell performance by means of water vapor introduction during CIGSe deposition. In this study, we have examined the effectiveness of water vapor introduction for other x -compositions (CISe and CGSe). Variations in the electrical properties observed in CIGSe (x 0.5), that is, increasing hole density and conductivity with water vapor introduction, were also observed in CISe and CGSe. Water vapor introduction affected solar cell performance as well; open circuit voltages, short circuit current densities, and efficiencies were improved. The improvements in cell performance are thought to be related to annihilation of donor defects arising from Se-vacancies by incorporation of oxygen from the water vapor. In addition to this, the sodium content in the CIGSe layers was found to depend on the partial pressure of water vapor during deposition. This result suggests that the improvement mechanism is also related with the so-called Na-effects'.

  19. Zn incorporation and (CuIn)1-xZn2xSe2 thin film formation during the selenization of evaporated Cu and In precursors on Al:ZnO coated glass substrates

    NASA Astrophysics Data System (ADS)

    Guillén, C.; Herrero, J.

    2011-11-01

    CuInSe2 thin films with typical 1.0 eV gap energy and tetragonal chalcopyrite structure have been obtained on soda-lime glass substrates by the reaction of sequentially evaporated Cu and In layers with elemental selenium vapor, at 500 °C in flowing Ar. When analogous deposition and reaction processes were performed on Al:ZnO coated glasses, some increment in the band gap energy and diminution in the crystalline interplanar spacings have been detected for the resulting films with an extent that depends on the Cu/In atomic ratio of the evaporated precursor layers. This fact has been related to Zn incorporation into the selenized film, with quaternary (CuIn)1-xZn2xSe2 compound formation that is influenced by the presence of copper selenide phases during the reaction process. Such deductions are supported by the optical, structural and compositional characterizations that have been performed comparatively on samples prepared by selenization of evaporated metallic precursors with two different Cu/In ratios (0.9 and 1.1) on bare and Al:ZnO coated glass substrates.

  20. Development of sputtering systems for large-area deposition of CuIn1-xGaxSe1-ySy thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Jahagirdar, Anant H.; Kadam, Ankur A.; Patil, Harshad P.; Kulkarni, Sachin S.

    2003-07-01

    CuIn1-xGaxSe1-ySy (CIGS) thin-film modules are expected to become cheaper than crystalline silicon modules within 5 yr. At present, commissioning and reaching full production of thin film modules is delayed because of nonavailability of turnkey manufacturing plants. Very few universities are conducting research on development of PV plants. CIGS thin-film solar cells are being prepared routinely at Florida Solar Energy Center (FSEC) on glass and metallic foil substrates for terrestrial and space applications. Earlier, the substrate size was limited to 3×3 cm2. This article presents results of development of large-area sputtering systems for preparation of large (15.2×15.2 cm2) CIGS thin-film solar cells. The facilities have the potential of serving as a nucleus of a pilot plant for fabrication of CIGS minimodules. Initial problems of bowing of the brass diaphragm, restriction of effective water flow and consequent heating of the target material were resolved by increasing the thickness of the backing plate and redesigning the structural members. Thickness uniformity was improved by modifying the magnetic field distribution in the middle 15 cm portion of the 10.2×30.5 cm2 magnetron sputtering sources by selectively removing nickel-coated soft-iron pieces at the rear. This resulted in Mo layer thickness uniformity of +/-3% over 10.2×10.2 cm2. The magnetic field was boosted at extremities to avoid precipitous ~15% drop beyond 10.2 cm. With this, thickness uniformities of +/-2.5% for Mo and +/-4.5% for ZnO over 12.7×10.2 cm2 have been achieved however with a continuing drop beyond 12.7 cm width. Modifying the magnetic field to achieve better distribution by preferentially removing soft irons pieces and also boosting of the magnetic field at the ends are two new concepts introduced and successfully utilized in this study. Scaling up of the large-area uniform deposition of metallic precursor layers was a challenging task. The efforts were directed towards obtaining

  1. Nanostructured light-absorbing crystalline CuIn(1-x)GaxSe2 thin films grown through high flux, low energy ion irradiation

    NASA Astrophysics Data System (ADS)

    Hall, Allen J.; Hebert, Damon; Shah, Amish B.; Bettge, Martin; Rockett, Angus A.

    2013-10-01

    A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn1-xGaxSe2 thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620-740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600-670 °C) and high rf power (80-400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by {112}T facets. At 80-400 W rf power and 640-740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong {112}T texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0-50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of {112}T planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

  2. Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

    NASA Technical Reports Server (NTRS)

    Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

    2005-01-01

    The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

  3. Synthesis and Characterization of the First Liquid Single Source Precursors for the Deposition of Ternary Chalcopyrite (CuInS2) Thin Film Materials

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Cowen, Jonathan; Hepp, Aloysius

    2002-01-01

    Molecular engineering of ternary single source precursors based on the [{PBu3}2Cu(SR')2In(SR')2] architecture have afforded the first liquid CIS ternary single source precursors (when R = Et, n-Pr), which are suitable for low temperature deposition (< 350 C). Thermogravimetric analyses (TGA) and modulated-differential scanning calorimetry (DSC) confirm their liquid phase and reduced stability. X-ray diffraction studies, energy dispersive analyzer (EDS), and scanning electron microscopy (SEM) support the formation of the single-phase chalcopyrite CuInS2 at low temperatures.

  4. Structures, optical absorption and electrical properties of pulsed-laser-deposited CuIn0.8Ga0.2Se2 thin films and their use in CIGS/PCBM photovoltaic structures

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Wu, JiaDa; Xu, Ning

    2016-10-01

    Polycrystalline CuIn0.8Ga0.2Se2 (CIGS) thin films are deposited on ITO-glass substrates at different substrate temperatures by pulsed laser deposition using a Nd:YAG laser. The crystallinity of the as-deposited CIGS films significantly improved as the substrate temperature increased. The experimental results indicate that the ordered defect compound model is also applicable to the CIGS films deposited in these experiments. All the as-deposited CIGS thin films show absorption coefficients of 105 cm-1 magnitude in a wavelength range of 400-900 nm. The CIGS thin films deposited at substrate temperatures lower than 400 °C exhibit n-type conductivity while those deposited at a substrate temperature of 500 °C display p-type conductivity. The CIGS/phenyl-C61-butyric acid methyl ester (PCBM) photovoltaic structure, with a CIGS layer as the only absorber, demonstrates an apparent photovoltaic response with a short circuit current density of 0.389 mA cm-2 and an open circuit voltage of 0.327 V.

  5. Application of ICP-OES to the determination of CuIn(1-x)Ga(x)Se2 thin films used as absorber materials in solar cell devices.

    PubMed

    Fernández-Martínez, Rodolfo; Caballero, Raquel; Guillén, Cecilia; Gutiérrez, María Teresa; Rucandio, María Isabel

    2005-05-01

    CuIn(1-x)Ga(x)Se2 [CIGS; x=Ga/(In+Ga)] thin films are among of the best candidates as absorber materials for solar cell applications. The material quality and main properties of the polycrystalline absorber layer are critically influenced by deviations in the stoichiometry, particularly in the Cu/(In+Ga) atomic ratio. In this work a simple, sensitive and accurate method has been developed for the quantitative determination of these thin films by inductively coupled plasma optical emission spectrometry (ICP-OES). The proposed method involves an acid digestion of the samples to achieve the complete solubilization of CIGS, followed by the analytical determination by ICP-OES. A digestion procedure with 50% HNO3 alone or in the presence of 10% HCl was performed to dissolve those thin films deposited on glass or Mo-coated glass substrates, respectively. Two analytical lines were selected for each element (Cu 324.754 and 327.396 nm, Ga 294.364 and 417.206 nm, In 303.936 and 325.609 nm, Se 196.090 and 203.985 nm, and Mo 202.030 and 379.825 nm) and a study of spectral interferences was performed which showed them to be suitable, since they offered a high sensitivity and no significant inter-element interferences were detected. Detection limits for all elements at the selected lines were found to be appropriate for this kind of application, and the relative standard deviations were lower than 1.5% for all elements with the exception of Se (about 5%). The Cu/(In+Ga) atomic ratios obtained from the application of this method to CIGS thin films were consistent with the study of the structural and morphological properties by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

  6. Charge-carrier dynamics in polycrystalline thin-film CuIn1-xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    NASA Astrophysics Data System (ADS)

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan

    2015-05-01

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn1-xGaxSe2 (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn1-xGaxSe2 (with x ≈ 0.3) as 22 ± 2 cm2(Vs)-1. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  7. Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties

    SciTech Connect

    Johnston, S.; Unold, T.; Repins, I.; Kanevce, A.; Zaunbrecher, K.; Yan, F.; Li, J. V.; Dippo, P.; Sundaramoorthy, R.; Jones, K. M.; To, B.

    2012-07-01

    Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se{sub 2} (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices corresponding efficiency and open-circuit voltage (V{sub OC}), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.

  8. Improved Photovoltaic Characteristics and Grain Boundary Potentials of CuIn0.7Ga0.3Se2 Thin Films Spin-Coated by Na-Dissolved Nontoxic Precursor Solution.

    PubMed

    Choi, Ik Jin; Jang, Jin Woo; Mohanty, Bhaskar Chandra; Lee, Seung Min; Cho, Yong Soo

    2016-07-13

    This work introduces the incorporation of Na into the nontoxic precursor solution of CIGS to improve photovoltaic cell performance with the optimized benefits of Na. The extensive incorporation range of 0.05 to 0.5 mol % Na is used for the simple spin-coating process of high quality absorber thin films. A cell efficiency of ∼8.21%, which corresponds to an improvement of ∼10.2% compared to the reference sample, is achieved for the 0.25 mol % Na sample with enhanced open-circuit voltage and fill factor. The improvement was further analyzed as related to InCu defects and grain boundary potentials.

  9. Fabrication of CuInS2 films from electrodeposited Cu/In bilayers: effects of preheat treatment on their structural, photoelectrochemical and solar cell properties.

    PubMed

    Lee, Sun Min; Ikeda, Shigeru; Yagi, Tetsuro; Harada, Takashi; Ennaoui, Ahmed; Matsumura, Michio

    2011-04-14

    Polycrystalline CuInS(2) films were fabricated by sulfurization of electrodeposited Cu and In metallic precursor films in a Cu-rich composition at 520 °C in H(2)S (5% in Ar). Structural analyses revealed that the adherence of the thus-formed CuInS(2) film to the Mo substrate was strongly dependent on heating profiles of the Cu/In bilayer film: a CuInS(2) film with poor adherence having many crevices was formed when the Cu/In bilayer film was heated monotonously from room temperature to 520 °C in Ar within 25 min followed by sulfurization, whereas CuInS(2) films with good adherence were obtained when the Cu/In films were pretreated at 110 °C in Ar for 10-60 min just before increasing the temperature up to 520 °C for sulfurization. It was also clarified that the CuInS(2) film obtained without 110 °C pretreatment had pinholes inside the film, whereas the CuInS(2) films formed after 110 °C pretreatment showed no notable pinholes. Photoelectrochemical responses of these CuInS(2) films in an electrolyte solution containing Eu(III) indicated that the CuInS(2) films obtained after 110 °C pretreatment had higher external quantum efficiency (EQE) values than those of films obtained without 110 °C pretreatment, mainly due to better adherence of 110 °C pretreated CuInS(2) films to the Mo substrate than the CuInS(2) film obtained without 110 °C pretreatment. The performance of solar cells with an Al:ZnO/Zn(S,O)/CdS/CuInS(2)/Mo structure also depended on the structural characteristics of the CuInS(2) films, i.e., preliminary conversion efficiencies of ca. 5% were obtained for devices based on the CuInS(2) films obtained after 110 °C pretreatment, whereas the device prepared by the CuInS(2) film without 110 °C pretreatment showed the conversion efficiency less than 1.5%.

  10. The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2003-01-01

    Ternary single-source precursors were used to deposit CuInS2 thin films using chemical spray pyrolysis. We investigated the effect of the film composition on texture, secondary phase formation, and grain size. As-grown films were most often In-rich. They became more (204/220)-oriented as indium concentration increased, and always contained a yet unidentified secondary phase. The (112)-prefened orientation became more pronounced as the film composition became more Cu-rich. The secondary phase was determined to be an In-rich compound based on composition analysis and Raman spectroscopy. In addition, as-grown Cu-rich (112)-oriented films did not exhibit the In-rich compound. Depositing a thin Cu layer prior to the growth of CuInS2 increased the maximum grain size from - 0.5 micron to - 1 micron, and prevented the formation of the In-rich secondary phase.

  11. Local Structure of CuIn3Se5

    SciTech Connect

    Chang, C. H.; Wei, S. H.; Leyarovska, N.; Johnson, J. W.; Zhang, S. B.; Stanbery, B. J.; Anderson, T. J.

    2000-01-01

    The results of a detailed EXAFS study of the Cu-K, In-K, and Se-K edges CuIn3Se5 are reported. The Cu and In first nearest neighbor local structures were found to be almost identical to those in CuInSe2.

  12. 19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer

    SciTech Connect

    Bhattacharya. R. N.

    2008-01-01

    CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.

  13. Nanocrystalline CuInS2 And CuInSe2 via Low-Temperature Pyrolysis Of Single-Source Molecular Precursors

    NASA Technical Reports Server (NTRS)

    Castro, Stephanie L.; Bailey, Sheila G.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Hepp, Aloysius F.

    2002-01-01

    Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of the material with the correct stoichiometry, as a nanocrystalline powder or a thin film. Nanocrystalline materials hold potential as components of next-generation Photovoltaic (PV) devices. Presented here are the syntheses of CuInS2 and CuInSe2 nanocrystals from the precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively. The size of the nanocrystals varies with the reaction temperature; a minimum of 200 C is required for the formation of the smallest CuInS2 crystals (approximately 1.6 nm diameter); at 300 C, crystals are approximately 7 nm.

  14. Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Bär, M.; Nishiwaki, S.; Weinhardt, L.; Pookpanratana, S.; Shafarman, W. N.; Heske, C.

    2008-07-01

    We have investigated the electronic structure of the absorber/back contact interface for S-free [Cu(In ,Ga)Se2 ("CIGSe")] and S-containing [Cu(In ,Ga)(S,Se)2 ("CIGSSe")] chalcopyrites with direct and inverse photoemission. Comparison of the electronic levels of the cleavage planes reveals a pronounced cliff in the conduction band at the CIG(S )Se/Mo interface. For the valence band, we find a flat alignment and a small spike for the CIGSe- and CIGSSe-based structures, respectively.

  15. Elaboration et caracterisation de couches minces de CuInS2 deposees par la pyrolyse par pulverisation ultrasonique a base de transducteur

    NASA Astrophysics Data System (ADS)

    Petuenju, Eric Nguwuo

    The present thesis study is part of the work of The Laboratory of New Materials for Energy and Electrochemistry systems (LaNoMat) that search new techniques to elaborate new materials for photovoltaic solar applications. This aims contribute to the development of the exploitation of solar energy into electrical energy by the maximum of the population throughout the world. This work deals with the determination of CuInS2 thin film deposition parameters by ultrasonic spray pyrolysis method for applications in the technology of three dimensional (3D) solar cells. The structure of the band gap of CuInS2 (a semiconductor material with a direct bandgap of 1.55 eV) makes it an excellent candidate for the role of the absorber in thin film technology for solar photovoltaic applications. 3D solar photovoltaic technology requires the production of a p-n junction with n and p-type semiconductors to make networks. The production and growth of such networks depends on the creation of thin films which have the characteristics of an ultrathin nanocomposite or extremely thin absorber (typically a few tens of nanometers) or which act as a quantum dot. To allow the emergence of 3D photovoltaic technology, it is important to develop methods for the growth of thin layers of materials such as CuInS 2, which are potentially interesting for this purpose. But the development of methods for thin film deposition, for the reasons of competition and accessibility, must be considered as an important factor in the context of the development of three-dimensional photovoltaic solar cells at low cost (production costs: of the order of 0,5 a 0,3$US/Watt-peak) (Beard et al., 2014). To do this it is necessary to use materials manufacturing technology readily available and inexpensive, and allowing to have materials on large surface, such as pyrolysis which allows to reduce costs by a factor of 100 compared to the crystallogenesis. Pyrolysis is defined as a process for decomposing one or more compounds

  16. Synthesis of CuInS2 quantum dots using polyetheramine as solvent

    NASA Astrophysics Data System (ADS)

    Shei, Shih-Chang; Chiang, Wen-Jui; Chang, Shoou-Jinn

    2015-03-01

    This paper presents a facile solvothermal method of synthesizing copper indium sulfide (CuInS2) quantum dots (QDs) via a non-coordinated system using polyetheramine as a solvent. The structural and optical properties of the resulting CuInS2 QDs were investigated using composition analysis, absorption spectroscopy, and emission spectroscopy. We employed molar ratios of I, III, and VI group elements to control the structure of CuInS2 QDs. An excess of group VI elements facilitated precipitation, whereas an excess of group I elements resulted in CuInS2 QDs with high photoluminescence quantum yield. The emission wavelength and photoluminescence quantum yield could also be modulated by controlling the composition ratio of Cu and In in the injection stock solution. An increase in the portion of S shifted the emission wavelength of the QDs to a shorter wavelength and increased the photoluminescence quantum yield. Our results demonstrate that the band gap of the CuInS2 QDs is tunable with size as well as the composition of the reactant. The photoluminescence quantum yield of the CuInS2 QDs ranged between 0.7% and 8.8% at 250°C. We also determined some important physical parameters such as the band gaps and energy levels of this system, which are crucial for the application of CuInS2 nanocrystals.

  17. Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

    NASA Technical Reports Server (NTRS)

    Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

    1998-01-01

    Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

  18. Fabrication of CIGS thin films by using spray pyrolysis and post-selenization

    NASA Astrophysics Data System (ADS)

    Kim, Seong Yeon; Kim, JunHo

    2012-06-01

    We fabricated Cu(In1- x Ga x )Se2 ( x: 0 ˜ 0.4) thin films by using ultrasonic spray pyrolysis and post-selenization. First, we made Cu(In1- x Ga x )S2 ( x: 0 ˜ 0.4) films by ultrasonic spray pyrolysis under an air environment. Then, we converted as-sprayed Cu(In1- x Ga x )S2 (CIGS) films to Cu-(In1- x Ga x )Se2 (CIGSe) films through post-selenization. For all Ga fractions, the sprayed CIGS films were well recrystallized into poly-crystalline CIGSe films with a dominant (112) texture, which was confirmed by X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analyses. This result indicates that CIGSe films with any amount of Ga substitution can be made by converting sprayed CIGS to CIGSe with post-selenization.

  19. Formulation and Characterization of CuIn1-xGaxSe2 Ink for Gravure Offset Printing

    NASA Astrophysics Data System (ADS)

    Kim, Inyoung; Han, Hyun-Suk; Kwak, Sun-Woo; Yu, Jong-Su; Kim, Bongmin; Jang, Yunseok; Lee, Taik-Min

    2013-05-01

    CuIn1-xGaxSe2 (CIGS) paste for gravure offset printing was formulated by changing the amount of additives to determine the critical factor for gravure offset printing quality. With the addition of poly(vinyl pyrrolidone) (PVP), the viscosity and yield stress of CIGS ink decreased and shear thinning behavior disappeared. However, PVP effectively enhanced ink cohesion and elastic modulus, which critically affected the printability of the CIGS paste. Intense pulsed light (IPL) treatment in air made the microstructure of CIGS film denser without a phase change or oxidation. The gravure offset printing technique and IPL treatment were considered a good combination for a continuous and fast CIGS film growth process.

  20. Hydroxyl-Terminated CuInS2-Based Quantum Dots: Potential Cathode Interfacial Modifiers for Efficient Inverted Polymer Solar Cells.

    PubMed

    Chen, Hui; Chao, Pengjie; Han, Dengbao; Wang, Huan; Miao, Jingsheng; Zhong, Haizheng; Meng, Hong; He, Feng

    2017-03-01

    The use of interfacial modifiers on cathode or anode layers can effectively reduce the recombination loss and thus have potential to enhance the device performance of polymer solar cells. In this work, we demonstrated that hydroxyl-terminated CuInS2-based quantum dots could be potential cathode interfacial modifiers on ZnO layer for inverted polymer solar cells. By casting of a thin film of CuInS2-based quantum dots onto ZnO layer, the controlled devices show obvious enhancements of open-circuit voltage, short-circuit current, and fill factor. With an optimized interfacial layer with ∼7 nm thickness, an improvement of power conversion efficiency up to 16% is obtained and the optimized power conversion efficiency of PTB7-based (PTB7: poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno[3,4-b] thiophenediyl

  1. Effect of alloying on the photoluminescence of the CuInS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Kim, Young-Kuk; Choi, Chul-Jin

    2011-10-01

    We have developed a novel route to highly luminescent Cd-free core-shell nanocrystals. By simply refluxing assynthesized CuInS2 nanocrystals with zinc acetate and palmitic acid, highly luminescent CuInS2/ZnS nanocrystals were synthesized. We modified the photoluminescence of the grown nanocrystal by alloying foreign atoms. Nanocrystals with alloyed cores were synthesized by adding selenium and nanocrystals with alloyed shell layers were synthesized by refluxing the as-synthesized CuInS2 nanocrystals with mixture of cadmium acetate, zinc acetate and palmitic acid. It was found that the emission wavelength of the nanocrystals was shifted to longer wavelength side by alloying. The photoluminescence spectra showed clear red-shift without significant minimization of emission intensity. A Detailed study on the emission process of nanocrystals implies that the formation of shell layers with small lattice mismatch minimized mismatch strain generated from the shell layers in contrast to core alloyed nanocrystals.

  2. The phase transformation of CuInS2 from chalcopyrite to wurtzite

    NASA Astrophysics Data System (ADS)

    Xie, Bing-Bing; Hu, Bin-Bin; Jiang, Li-Fang; Li, Guo; Du, Zu-Liang

    2015-02-01

    In the present work, CuInS2 nanoparticles have been successfully synthesized by water-bath method with deionized water as solvent and thioglycolic acid as complexing agent at 80°C. The phase transition of CuInS2 from chalcopyrite to wurtzite was realized by adjusting the pH value of reaction solution. The emergence of Cu2S in the condition of higher pH value of reaction solution led to the formation of wurtzite CuInS2. This facile method that controls the phase structure by adjusting the solution pH value could open a new way to synthesize other I-III-VI2 ternary semiconductor compounds.

  3. New crystal structures in hexagonal CuInS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Shen, Xiao; Hernández-Pagan, Emil A.; Zhou, Wu; Puzyrev, Yevgeniy S.; Idrobo, Juan C.; MacDonald, Janet E.; Pennycook, Stephen J.; Pantelides, Sokrates T.

    2013-03-01

    CuInS2 is one of the best candidate materials for solar energy harvesting. Its nanocrystals with a hexagonal lattice structure that is different from the bulk chalcopyrite phase have been synthesized by many groups. The structure of these CuInS2 nanocrystals has been previously identified as the wurtzite structure in which the copper and indium atoms randomly occupy the cation sites. Using first-principles total energy and electronic structure calculations based on density functional theory, UV-vis absorption spectroscopy, X-ray diffraction, and atomic resolution Z-contrast images obtained in an aberration-corrected scanning transmission electron microscope, we show that CuInS2 nanocrystals do not form random wurtzite structure. Instead, the CuInS2 nanocrystals consist of several wurtzite- related crystal structures with ordered cation sublattices, some of which are reported for the first time here. This work is supported by the NSF TN-SCORE (JEM), by NSF (WZ), by ORNL's Shared Research Equipment User Program (JCI) sponsored by DOE BES, by DOE BES Materials Sciences and Engineering Division (SJP, STP), and used resources of the National Energy Research Scientific Computing Center, supported by the DOE Office of Science under Contract No. DE-AC02-05CH11231.

  4. Synthesis, Characterization and Decomposition Studies of Tris(N,N-dibenzyldithiocarbamato) Indium(III): Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S ), commonly referred to as tris(N,Ndibenzyldithiocarbamato) indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1 bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry and Fourier-Transform infrared spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.

  5. Progress in the Efficiency of Wide-Gap Cu(In1-xGax)Se2 Solar Cells Using CIGSe Layers Grown in Water Vapor

    NASA Astrophysics Data System (ADS)

    Ishizuka, Shogo; Sakurai, Keiichiro; Yamada, Akimasa; Shibata, Hajime; Matsubara, Koji; Yonemura, Minoru; Nakamura, Satoshi; Nakanishi, Hisayuki; Kojima, Takeshi; Niki, Shigeru

    2005-05-01

    Progress in the performance of wide-gap Cu(In1-xGax)Se2 (CIGSe) solar cells for x values around 0.5 has been demonstrated using CIGSe layers grown in the presence of water vapor. While CIGSe thin films deposited in the presence of water vapor showed variations in electrical properties such as increases in hole carrier density and a consequent enhancement of p-type conductivity, no significant changes in the morphology and growth orientation were observed. Both the open circuit voltages and current densities of the CIGSe solar cells were improved using CIGSe layers grown in water vapor. An 18.1%-efficient cell with an open circuit voltage of 0.744 V, a current density of 32.4 mA/cm2 and a fill factor of 0.752 was fabricated from a 1.3 eV-CIGSe (x ˜ 0.48) layer.

  6. Highly efficient graphene-based Cu(In, Ga)Se₂ solar cells with large active area.

    PubMed

    Yin, Ling; Zhang, Kang; Luo, Hailin; Cheng, Guanming; Ma, Xuhang; Xiong, Zhiyu; Xiao, Xudong

    2014-09-21

    Two-dimensional graphene has tremendous potential to be used as a transparent conducting electrode (TCE), owing to its high transparency and conductivity. To date graphene films have been applied to several kinds of solar cells except the Cu(In, Ga)Se₂ (CIGS) solar cell. In this work, we present a novel TCE structure consisting of a doped graphene film and a thin layer of poly(methyl methacrylate) (PMMA) to replace the ZnO:Al (AZO) electrode for CIGS. By optimizing the contact between graphene and intrinsic ZnO (i-ZnO), a high power conversion efficiency (PCE) of 13.5% has been achieved, which is among the highest efficiencies of graphene-based solar cells ever reported and approaching those of AZO-based solar cells. Besides, the active area of our solar cells reaches 45 mm(2), much larger than other highly efficient graphene-based solar cells (>10%) reported so far. Moreover, compared with AZO-based CIGS solar cells, the total reflectance of the graphene-based CIGS solar cells is decreased and the quantum efficiency of the graphene-based CIGS is enhanced in the near infrared region (NIR), which strongly support graphene as a competitive candidate material for the TCE in the CIGS solar cell. Furthermore, the graphene/PMMA film can protect the solar cell from moisture, making the graphene-based solar cells much more stable than the AZO-based solar cells.

  7. Enhanced photocatalytic hydrogen evolution activity of CuInS2 loaded TiO2 under solar light irradiation

    NASA Astrophysics Data System (ADS)

    Li, Changjiang; Xi, Zhenhao; Fang, Wenzhang; Xing, Mingyang; Zhang, Jinlong

    2015-03-01

    In this paper, p-n type CuInS2/TiO2 particles were prepared in ethylenediamine by the solvothermal method. The microstructural properties of the synthesized p-n type catalysts were characterized by X-ray diffraction (XRD) in order to confirm the existence of crystalline CuInS2 on the surface of TiO2, which was also confirmed by X-ray photoelectron spectroscopy (XPS). Transmission electron microscopy (TEM) images provided the detailed morphological properties about the CuInS2/TiO2 heterostructure. UV-vis diffuse reflectance spectroscopy (UV-vis DRS) was used to investigate the optical properties of the CuInS2/TiO2 particles. The DRS results indicated that both the p-n type structure and CuInS2 acting as a sensitizer can enhance significantly the absorption of UV and visible light. The photocatalytic activities of the CuInS2/TiO2 particles were evaluated by hydrogen evolution reactions using Xe-lamp irradiation as a simulated solar light source. The greatly enhanced photocatalytic activity of hydrogen evolution under simulated solar light is about ~7 fold higher than that of pure commercial TiO2 (Degussa P25).

  8. Facile Preparation of Wurtzite CuInE2 (E = S, Se) Nanoparticles Under Solvothermal Conditions.

    PubMed

    Zhao, Xuzhao; Huang, Yining; Corrigan, John F

    2016-10-17

    In this work, the synthesis of nanoscale CuInS2 and CuInSe2 was developed using molecular precursors of the type [(Ph3P)2CuIn(ER)4] (E = S, Se) and solvothermal reactions. Various conditions were investigated including the use of different precursors, reaction temperatures, reaction times and the addition of a secondary chalcogen source to mixtures. After optimizing conditions, nanoparticles of CuInS2 and CuInSe2 were isolated with controlled sizes in the range of 2-5 nm (wurtzite structure), which ultimately tuned the band gap energies of the materials. Characterization methods including powder X-ray diffraction, electron microscopy, and optical spectroscopy were used to investigate their structures and photophysical properties.

  9. MoS2 Nanosheet-Modified CuInS2 Photocatalyst for Visible-Light-Driven Hydrogen Production from Water.

    PubMed

    Yuan, Yong-Jun; Chen, Da-Qin; Huang, Yan-Wei; Yu, Zhen-Tao; Zhong, Jia-Song; Chen, Ting-Ting; Tu, Wen-Guang; Guan, Zhong-Jie; Cao, Da-Peng; Zou, Zhi-Gang

    2016-05-10

    Exploiting photocatalysts respond to visible light is of huge challenge for photocatalytic H2 production. Here, we synthesize a new composite material consisting of few-layer MoS2 nanosheets grown on CuInS2 surface as an efficient photocatalyst for solar H2 generation. The photocatalytic results demonstrate that the 3 wt % MoS2 /CuInS2 photocatalyst exhibits the highest H2 generation rate of 316 μmol h(-1)  g(-1) under visible light irradiation, which is almost 28 times higher than that of CuInS2 . Importantly, the MoS2 /CuInS2 photocatalyst shows a much higher photocatalytic activity than that of Pt-loaded CuInS2 photocatalyst. The enhanced photocatalytic activities of MoS2 /CuInS2 photocatalysts can be attributed to the improved charge separation at the interface of MoS2 and CuInS2, which is demonstrated by the significant enhancement of photocurrent responses in MoS2 /CuInS2 photoelectrodes. This work presents a noble-metal-free photocatalyst that responds to visible light for solar H2 generation.

  10. Influence of surface states of CuInS2 quantum dots in quantum dots sensitized photo-electrodes

    NASA Astrophysics Data System (ADS)

    Peng, Zhuoyin; Liu, Yueli; Wu, Lei; Zhao, Yinghan; Chen, Keqiang; Chen, Wen

    2016-12-01

    Surface states are significant factor for the enhancement of electrochemical performance in CuInS2 quantum dot sensitized photo-electrodes. DDT, OLA, MPA, and S2- ligand capped CuInS2 quantum dot sensitized photo-electrodes are prepared by thermolysis, solvethermal and ligand-exchange processes, respectively, and their optical properties and photoelectrochemical properties are investigated. The S2- ligand enhances the UV-vis absorption and electron-hole separation property as well as the excellent charge transfer performance of the photo-electrodes, which is attributed to the fact that the atomic S2- ligand for the interfacial region of quantum dots may improve the electron transfer rate. These S2--capped CuInS2 quantum dot sensitized photo-electrodes exhibit the excellent photoelectrochemical efficiency and IPCE peak value, which is higher than that of the samples with DDT, OLA and MPA ligands.

  11. Crystallographic and optical properties and band structures of CuInSe2, CuIn3Se5, and CuIn5Se8 phases in Cu-poor Cu2Se-In2Se3 pseudo-binary system

    NASA Astrophysics Data System (ADS)

    Maeda, Tsuyoshi; Gong, Weiyan; Wada, Takahiro

    2016-04-01

    We prepared CuInSe2 and Cu-poor Cu-In-Se (CIS) phases such as CuIn3Se5 and CuIn5Se8 in the composition of (1 - x)Cu2Se-(x)In2Se3 with 0.5 ≤ x ≤ 1.0. The crystal structure of the sample changed from chalcopyrite-type CuInSe2 to hexagonal CuIn5Se8 through stannite-type CuIn3Se5 with increasing x (decreasing Cu/In ratio). The band-gap energies of Cu-poor CIS samples, i.e., CuIn3Se5 (1.17 eV) and CuIn5Se8 (1.22-1.24 eV), are larger than that of chalcopyrite-type CuInSe2 (0.99 eV). The energy levels of the valence band maxima (VBMs) were estimated from the ionization energy by photoemission yield spectroscopy (PYS) measurements. The energy levels of the VBMs of the Cu-poor CIS samples decrease rapidly with decreasing Cu/In ratio. The ionization energy of stannite-type CuIn3Se5 is 0.4 eV larger than that of chalcopyrite-type CuInSe2. The ionization energy of CuIn5Se8 is 0.1-0.3 eV larger than that of CuIn3Se5. These results show that the energy position of the VBM from the vacuum level of Cu-poor CIS phases, such as CuIn3Se5 and CuIn5Se8, is deeper than that of CuInSe2. To understand the electronic structure of Cu-poor CIS compounds, we performed first-principles band structure calculations on stannite-type CuIn5Se8 and a reference compound, tetragonal chalcopyrite-type CuInSe2, using the HSE06 nonlocal screened hybrid density functional. The calculated band-gap energy of tetragonal stannite-type CuIn5Se8 (1.19 eV) is larger than that of chalcopyrite-type CuInSe2 (0.94 eV).

  12. Structural, optical and photoelectrochemical properties of CuIn3Se5

    NASA Astrophysics Data System (ADS)

    Djellal, L.; Bouguelia, A.; Trari, M.

    2008-04-01

    The morphology, optical characterization and transport properties of dense material CuIn3Se5 have been reported. CuIn3Se5 was synthesized by the fusion technique in a sealed quartz ampoule. The ingots were polycrystalline and the phase crystallizes in a P-chalcopyrite structure. The XRD pattern confirms the formation of the ordered vacancy compound. The composition (Cu = 13.3 at%, In = 31.5 at%, Se = 55.2 at%), established by energy dispersive spectroscopy, is close to the stoichiometric formulation. A band gap of 1.19 eV has been obtained from the diffuse reflectance spectrum. CuIn3Se5 exhibits semi-conducting behavior with an activation energy of 0.52 eV. The thermal variation of the thermopower indicates that the charge carriers are electrons and the conduction occurs predominantly by small polaron hopping. The dissolution rate, determined through dissolved copper, was found to be 1.2 µmol m-2/year in the KCl electrolyte. The results give deeper insights into the photoelectrochemical properties investigated for the first time on the dense material. The capacitance measurement indicates linear behavior from which a flat band potential Vfb of -0.22 VSCE and a doping density ND of 3.75 × 1016 cm-3 were determined. The energy band diagram shows the potentiality for solar energy conversion. The complex impedance pattern is circular in the low frequency region and tends to a straight line in the high frequency one, attributed to the ionic diffusion.

  13. Polyol-mediated synthesis of porous nanocrystalline CuInS 2 foam

    NASA Astrophysics Data System (ADS)

    Shen, Guozhen; Chen, Di; Tang, Kaibin; Fang, Zhen; Sheng, Jie; Qian, Yitai

    2003-06-01

    A rapid and convenient polyol method has been proposed to synthesize foam-like CuInS 2 nanocrystalline with extended, sponge-like, porous structure by refluxing CuCl 2·2H 2O, InCl 3·4H 2O and thiourea (Tu) in ethylene glycol at 195°C for 1 h. Studies found that the agitation state and the ratio of CuCl 2 to InCl 3 have great influence on the purity of the final products.

  14. Effects of europium substitution for In on structure and photoelectric properties of CuIn1-xEuxTe2

    NASA Astrophysics Data System (ADS)

    Nie, Xiaomeng; Guo, Yongquan

    2016-01-01

    The structures and optical and electric properties of europium doped CuIn1-xEuxTe2 have been studied systematically using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive spectrum (EDS), ultraviolet and visible spectrophotometer (UV-vis), and standard four-probe method. The studies reveal that the minor europium doping into CuIn1-xEuxTe2 could still stabilize the chalcopyrite structure in a solid solution of x=0.1. The lattice parameters are going up with increasing the content of europium in CuIn1-xEuxTe2 due to the size effect at In site. The structural refinement confirms that Eu partly substitutes for In and occupies the 4b crystal position. SEM morphologies show that the europium doping into CuIn1-xEuxTe2 can fine the grains from the largely agglomerated state to the uniformly separated state. The electrical resistivities of single phase CuIn1-xEuxTe2 follow a mixture model of hopping conductivity and variable range hopping conductivity. The absorption band-gaps of CuIn1-xEuxTe2 at room temperature tend to increase with increasing Eu content. CuIn1-xEuxTe2 might be a good candidate for photovoltaic cell.

  15. Preparation of monolithic cu(In0.7Ga0.3)Se2 nanopowders and subsequent fabrication of sintered CIGS films.

    PubMed

    Song, Bong-Geun; Jung, Jae Hee; Bae, Gwi-Nam; Park, Hyung-Ho; Park, Jong-Ku; Cho, So-Hye

    2013-09-01

    Cu(In,Ga)Se2 (CIGS) is a compound semiconductor and is one of the most attractive light-absorbing materials for use in thin film solar cells. Among the various approaches to prepare CIGS thin films, the powder process offers an extremely simple and materials-efficient method. Here, we report the mechano-chemical preparation of CIGS compound powders suitable for fabrication of CIGS films by a powder process. We found that the CIGS phase was formed from the elemental powders of Cu, In, and Se and liquid Ga using high energy milling process with a milling time as short as 40 min at 200 rpm due to a self-accelerating exothermic reaction. The morphology and size of the CIGS powders changed with a function of the milling speed (100-300 rpm), leading to an optimal condition of milling at 200 rpm for 120 min. We also found that it was difficult to obtain a monolithic phase of the CIGS powders without severe particle aggregation by mechano-chemical milling alone. Therefore, in combination with the milling, subsequent heat-treatment at 300 degrees C was performed, which successfully provided monolithic CIGS nanopowders suitable for powder process. When a thin film was fabricated from the monolithic CIGS nanopowders, a highly dense film with large crystalline grains was obtained. The CIGS film preserved its chemical composition of CuIn0.7Ga0.3Se2 after sintering as evidenced by Raman spectroscopy, EDS and SAED pattern of transmission electron microscopy. The film was also found suitable for a light absorbing layer of CIGS solar cells with its band gap energy of 1.14 eV evaluated by transmittance spectroscopy.

  16. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  17. Enhanced Optical Properties of Cu-In-S Quantum Dots with Zn Addition

    NASA Astrophysics Data System (ADS)

    Chi, Tran Thi Kim; Thuy, Ung Thi Dieu; Huyen, Tran Thi Thuong; Thuy, Nguyen Thi Minh; Le, Nguyen Thi; Liem, Nguyen Quang

    2016-05-01

    Quaternary Cu-In-Zn-S (CIZS) alloy quantum dots (QDs) have been chemically synthesized by a hydrothermal method at 120°C and heating-up method using diesel as a high-boiling-point reaction solvent at 220°C. The resulting CuInS2 (CIS) QDs with small Zn addition of 10% into the precursors possessed tetragonal structure, spherical morphology, and small size of 3 nm, as characterized by x-ray diffraction (XRD) analysis, Raman spectroscopy, and high-resolution transmission electron microscopy (HR-TEM). The absorption (Abs) and photoluminescence (PL) spectra of the CIZS alloy QDs both shifted to shorter wavelength (higher energy) in comparison with CIS QDs. The absorption edge and PL peak of the CIZS alloy QDs shifted to shorter wavelength, and the corresponding intensity increased with decreasing temperature in the range of 15 K to 300 K.

  18. Chemical treatment and Fermi-level pinning of CuInS2 and InP photocathodes

    NASA Astrophysics Data System (ADS)

    Lewerenz, H. J.; Goslowsky, H.

    1988-04-01

    The dependence of the photovoltage, V(Ph), in the p-CuInS2/V(2+)-V(3+) and p-InP/V(2+)-V(3+) solar cells on the redox potential E of the vanadium solution was investigated for different surface conditions of the P-CuInS2 and p-InP. Samples were etched by immersion, for varying times, into a 2:1:1 mixture of H2O-30 percent H2O2-conc. H2SO4 (for CuInS2) or of H2O-HCl-HNO3 (for InP). Etching and chemisorption were found to successively improve CuInS2 photovoltages, resulting in a slope of about 1 in the V(Ph) vs E plots.

  19. Colloidal CuInS2 Quantum Dots as Inorganic Hole-Transporting Material in Perovskite Solar Cells.

    PubMed

    Lv, Mei; Zhu, Jun; Huang, Yang; Li, Yi; Shao, Zhipeng; Xu, Yafeng; Dai, Songyuan

    2015-08-12

    To develop novel hole-transporting materials (HTMs) is an important issue of perovskite solar cells (PSCs), especially favoring the stability improvement and the cost reduction. Herein, we use ternary quantum dots (QDs) as HTM in mesoporous TiO2/CH3NH3PbI3/HTM/Au solar cell, and modify the surface of CuInS2 QDs by cation exchange to improve the carrier transport. The device efficiency using CuInS2 QDs with a ZnS shell layer as HTM is 8.38% under AM 1.5, 100 mW cm(-2). The electrochemical impedance spectroscopy suggested that the significantly enhanced performance is mainly attributed to the reduced charge recombination between TiO2 and HTM. It paves a new pathway for the future development of cheap inorganic HTMs for the high efficiency PSCs.

  20. CuInSe2 films and solar cells obtained by selenization of evaporated Cu-In layers

    NASA Astrophysics Data System (ADS)

    Basol, Bulent M.; Kapur, Vijay K.

    1989-05-01

    CuInSe2 films of various stoichiometries have been prepared by the two-stage process. In this method, Cu-In layers were first evaporated onto Mo-coated glass substrates in the form of stacks, and then they were selenized in a H2Se atmosphere at 400 °C to form the compound. CdZnS/CuInSe2 heterojunction solar cells were fabricated on these films and conversion efficiencies close to 7% were obtained.

  1. Small GSH-Capped CuInS2 Quantum Dots: MPA-Assisted Aqueous Phase Transfer and Bioimaging Applications.

    PubMed

    Zhao, Chuanzhen; Bai, Zelong; Liu, Xiangyou; Zhang, Yijia; Zou, Bingsuo; Zhong, Haizheng

    2015-08-19

    An efficient ligand exchange strategy for aqueous phase transfer of hydrophobic CuInS2/ZnS quantum dots was developed by employing glutathione (GSH) and mercaptopropionic acid (MPA) as the ligands. The whole process takes less than 20 min and can be scaled up to gram amount. The material characterizations show that the final aqueous soluble samples are solely capped with GSH on the surface. Importantly, these GSH-capped CuInS2/ZnS quantum dots have small size (hydrodynamic diameter <10 nm), moderate fluorescent properties (up to 34%) as well as high stability in aqueous solutions (stable for more than three months in 4 °C without any significant fluorescence quenching). Moreover, this ligand exchange strategy is also versatile for the aqueous phase transfer of other hydrophobic quantum dots, for instance, CuInSe2 and CdSe/ZnS quantum dots. We further demonstrated that GSH-capped quantum dots could be suitable fluorescence markers to penetrate cell membrane and image the cells. In addition, the GSH-capped CuInS2 quantum dots also have potential use in other fields such as photocatalysis and quantum dots sensitized solar cells.

  2. Nearly monodisperse CuInS2 hierarchical microarchitectures for photocatalytic H2 evolution under visible light.

    PubMed

    Zheng, Lei; Xu, Yang; Song, Yan; Wu, Changzheng; Zhang, Miao; Xie, Yi

    2009-05-04

    An enhanced visible-light-driven photocatalyst, CuInS(2), was prepared by a facile in situ formed template solvothermal route. The products show complex hierarchical architectures assembled from interleaving two-dimensional microcrystals and near monodispersity. It is interesting to see revealed a phase conversion process from binary sulfide to ternary sulfide as well as morphology evolution, investigated by X-ray diffraction and scanning electron microscopy. The involved CuS hierarchitectures form in situ and then act as the self-sacrificed templates, resulting in the obtained CuInS(2) inheriting the hierarchical architectures and monodispersity. More importantly, a much higher average hydrogen yield of 59.4 micromol/h for 1.0 g of photocatalyst under visible light irradiation than in the previously reported results has been attained over the obtained CuInS(2) hierarchitectures loaded with cocatalyst Pt, which may be due to the benefits inheriting from CuS templates such as monodispersity, high surface area, and permeability for providing sufficient visible light response and more reaction sites for photocatalysis in aqueous solution.

  3. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots

    NASA Astrophysics Data System (ADS)

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-12-01

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.

  4. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots

    PubMed Central

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-01-01

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy. PMID:26642815

  5. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots.

    PubMed

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-12-08

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.

  6. Third-order nonlinear optical response of CuInS2 quantum dots—Bright probes for near-infrared biodetection

    NASA Astrophysics Data System (ADS)

    Cichy, B.; Wawrzynczyk, D.; Bednarkiewicz, A.; Samoc, M.; Strek, W.

    2013-06-01

    Nonlinear refraction and nonlinear absorption in stoichiometric colloidal CuInS2 quantum dots, with absorption edge tuned up to the visible spectral region, were investigated. The nonlinear optical response of the quantum dots was measured in a wide range of wavelengths (700-1600 nm) using the Z-scan technique. The measurements revealed the presence of two-photon absorption in the near-infrared range and the negative nonlinear refraction in almost whole spectral range for all the investigated nanoparticles. The cubic nonlinearity of CuInS2 quantum dots is discussed in terms of defect-related optical properties of the material. The results indicate that CuInS2 quantum dots may be an interesting material for the single and multiphoton luminescence bio-detection techniques.

  7. Reduced Carrier Recombination in PbS - CuInS2 Quantum Dot Solar Cells.

    PubMed

    Sun, Zhenhua; Sitbon, Gary; Pons, Thomas; Bakulin, Artem A; Chen, Zhuoying

    2015-05-29

    Energy loss due to carrier recombination is among the major factors limiting the performance of TiO2/PbS colloidal quantum dot (QD) heterojunction solar cells. In this work, enhanced photocurrent is achieved by incorporating another type of hole-transporting QDs, Zn-doped CuInS2 (Zn-CIS) QDs into the PbS QD matrix. Binary QD solar cells exhibit a reduced charge recombination associated with the spatial charge separation between these two types of QDs. A ~30% increase in short-circuit current density and a ~20% increase in power conversion efficiency are observed in binary QD solar cells compared to cells built from PbS QDs only. In agreement with the charge transfer process identified through ultrafast pump/probe spectroscopy between these two QD components, transient photovoltage characteristics of single-component and binary QDs solar cells reveal longer carrier recombination time constants associated with the incorporation of Zn-CIS QDs. This work presents a straightforward, solution-processed method based on the incorporation of another QDs in the PbS QD matrix to control the carrier dynamics in colloidal QD materials and enhance solar cell performance.

  8. Reduced Carrier Recombination in PbS - CuInS2 Quantum Dot Solar Cells

    PubMed Central

    Sun, Zhenhua; Sitbon, Gary; Pons, Thomas; Bakulin, Artem A.; Chen, Zhuoying

    2015-01-01

    Energy loss due to carrier recombination is among the major factors limiting the performance of TiO2/PbS colloidal quantum dot (QD) heterojunction solar cells. In this work, enhanced photocurrent is achieved by incorporating another type of hole-transporting QDs, Zn-doped CuInS2 (Zn-CIS) QDs into the PbS QD matrix. Binary QD solar cells exhibit a reduced charge recombination associated with the spatial charge separation between these two types of QDs. A ~30% increase in short-circuit current density and a ~20% increase in power conversion efficiency are observed in binary QD solar cells compared to cells built from PbS QDs only. In agreement with the charge transfer process identified through ultrafast pump/probe spectroscopy between these two QD components, transient photovoltage characteristics of single-component and binary QDs solar cells reveal longer carrier recombination time constants associated with the incorporation of Zn-CIS QDs. This work presents a straightforward, solution-processed method based on the incorporation of another QDs in the PbS QD matrix to control the carrier dynamics in colloidal QD materials and enhance solar cell performance. PMID:26024021

  9. Self-organized antireflection CuIn(S,Se)2 nano-protrusions on flexible substrates by ion erosion based on CuInS2 nanocrystal precursor inks

    NASA Astrophysics Data System (ADS)

    Yen, Yu-Ting; Wang, Yi-Chung; Chen, Chia-Wei; Tsai, Hung-Wei; Chen, Yu-Ze; Hu, Fan; Chueh, Yu-Lun

    2015-11-01

    In this work, an approach to achieve surface nano-protrusions on a chalcopyrite CuIn(S,Se)2 thin film was demonstrated. Home-made CuInS2 nanocrystals with average diameter of 20 nm were prepared and characterized. By applying ion erosion process on the CuIn(S,Se)2 film, large-area self-aligned nano-protrusions can be formed. Interestingly, the process can be applied on flexible substrate where the CuIn(S,Se)2 film remains intact with no visible cracking after several bending tests. In addition, reflectance spectra reveal the extraordinary anti-reflectance characteristics of nano-protrusions on the CuIn(S,Se)2 film with the incident light from 350 to 2000 nm. A 36-cm2 CuIn(S,Se)2 film with nano-protrusions on flexible molybdenum foil substrate has been demonstrated, which demonstrated the feasibility of developing low cost with a high optical absorption CuIn(S,Se)2 flexible thin film.

  10. Synthesis of hexagonal structured wurtzite and chalcopyrite CuInS2 via a simple solution route

    PubMed Central

    2011-01-01

    Wurtzite semiconductor CuInS2 [CIS] has been reported in recent years. As a kind of metastable structure, it is a great challenge to synthesize pure wurtzite CIS at low temperature. In this paper, via a simple and quick solution route, we synthesize both wurtzite- and chalcopyrite-structure CIS. Well-controlled wurtzite CIS hexagonal plates are obtained when an appropriate agent is added. The influence of the used agent triethanolamine [TEA] has also been studied, and it turns out that without TEA, chalcopyrite CIS with a kind of rare morphology is formed through this method. PMID:22027183

  11. Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

    NASA Technical Reports Server (NTRS)

    Kasick, Michael P.

    2004-01-01

    Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between

  12. Thin-Layer Electrochemical Studies in the Development of a Cycle for the Formation of CdInSe2 by Electrochemical ALE.

    DTIC Science & Technology

    1996-06-22

    A thin-layer electrochemical cell (TLEC) was used in the development of a method for the electrodeposition of CuInSe2. Underpotential deposition (UPD...the complexing agent The information obtained in this study is intended to facilitate the development of an Electrochemical ALE cycle for the deposition ...of CuInS2. Future work will involve studies using an automated flow cell deposition system.

  13. Effect of tellurium deposition rate on the properties of Cu-In-Te based thin films and solar cells

    NASA Astrophysics Data System (ADS)

    Mise, Takahiro; Nakada, Tokio

    2011-01-01

    To investigate the effects of tellurium (Te) deposition rate on the properties of Cu-In-Te based thin films (Cu/In=0.30-0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn 3Te 5 phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn 3Te 5 thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm 2) efficiency of 4.4% ( Voc=309 mV, Jsc=28.0 mA/cm 2, and FF=0.509) without light soaking.

  14. Pulsed laser deposition of CuInS2 quantum dots on one-dimensional TiO2 nanorod arrays and their photoelectrochemical characteristics

    NASA Astrophysics Data System (ADS)

    Han, Minmin; Chen, Wenyuan; Guo, Hongjian; Yu, Limin; Li, Bo; Jia, Junhong

    2016-06-01

    In the typical solution-based synthesis of colloidal quantum dots (QDs), it always resorts to some surface treatment, ligand exchange processing or post-synthesis processing, which might involve some toxic chemical regents injurious to the performance of QD sensitized solar cells. In this work, the CuInS2 QDs are deposited on the surface of one-dimensional TiO2 nanorod arrays by the pulsed laser deposition (PLD) technique. The CuInS2 QDs are coated on TiO2 nanorods without any ligand engineering, and the performance of the obtained CuInS2 QD sensitized solar cells is optimized by adjusting the laser energy. An energy conversion efficiency of 3.95% is achieved under one sun illumination (AM 1.5, 100 mW cm-2). The improved performance is attributed to enhanced absorption in the longer wavelength region, quick interfacial charge transfer and few chance of carrier recombination with holes for CuInS2 QD-sensitized solar cells. Moreover, the photovoltaic device exhibits high stability in air without any specific encapsulation. Thus, the PLD technique could be further applied for the fabrication of QDs or other absorption materials.

  15. CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization.

    PubMed

    Zhou, Zhengji; Yuan, Shengjie; Fan, Junqi; Hou, Zeliang; Zhou, Wenhui; Du, Zuliang; Wu, Sixin

    2012-11-27

    CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm-2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated fabrication procedures and introduction of a linker molecule.

  16. Three-dimensional morphology of CuInS2:P3HT hybrid blends for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Krause, Christopher; Scheunemann, Dorothea; Parisi, Jürgen; Borchert, Holger

    2015-11-01

    Despite potential advantages, the performance of hybrid solar cells with colloidal nanocrystals remains low compared to pure organic solar cells, in particular, when Cd- and Pb-free nanocrystals are employed. To understand this discrepancy, we analyzed possible limiting factors of the performance of hybrid solar cells with CuInS2 nanoparticles and the polymer poly(3-hexylthiophene) (P3HT). Optimizing the thickness of the active layer indicated that charge transport limits the performance of the solar cells. Since charge transport is among others influenced by the morphology of the bulk heterojunction layer, we performed a detailed analysis of the blend morphology. Therefore, we used electron tomography which provides three-dimensional information on the interpenetrating network formed by the hybrid CuInS2:P3HT system. Using statistical methods, we analyzed the distribution of the nanoparticles inside the polymer matrix and the structure of the percolation paths. We found that the morphology appears well suited for application in hybrid solar cells, meaning that other factors must be the bottleneck. Therefore, we investigated in a second step the influence of a post-deposition ligand exchange with acetic acid. This strategy resulted in a strong relative improvement of the solar cell performance, although absolute performance parameters remain low in comparison to hybrid solar cells with colloidal cadmium or lead chalcogenide nanocrystals.

  17. Hierarchical TiO2-CuInS2 core-shell nanoarrays for photoelectrochemical water splitting.

    PubMed

    Guo, Keying; Liu, Zhifeng; Han, Jianhua; Liu, Zhichao; Li, Yajun; Wang, Bo; Cui, Ting; Zhou, Cailou

    2014-08-14

    Hierarchical TiO2-CuInS2 core-shell nanoarrays were fabricated directly on conducting glass substrates (FTO) via facile and low-cost hydrothermal and polyol reduction methods for photoelectrochemical (PEC) water splitting using TiO2 branched nanorod arrays (BNRs) as the reactive framework. An enhanced optical property of the core-shell structure was discovered. Firstly, TiO2 BNRs-CuS core-shell structure was synthesized through successive ionic layer adsorption and reaction (SILAR). Subsequently, TiO2 BNRs-CuInS2 core-shell structure was derived from TiO2 BNRs-CuS core-shell structure. On the basis of optimal thickness of the CuInS2 shell, such a TiO2 BNRs-CuInS2 core-shell structure exhibits higher photocatalytic activity, the photocurrent density and efficiency for hydrogen generation are up to 19.07 mA cm(-2) and 11.48%, respectively, which are probably because of the improved absorption efficiency and the appropriate gradient energy gap structure. The TiO2 BNRs-CuInS2 core-shell structure can be promising building blocks in photoelectrochemical water splitting systems.

  18. Structural and optical characterization of CuInS2 quantum dots synthesized by microwave-assisted continuous flow methods

    NASA Astrophysics Data System (ADS)

    Fitzmorris, Robert C.; Oleksak, Richard P.; Zhou, Zheng; Mangum, Benjamin D.; Kurtin, Juanita N.; Herman, Gregory S.

    2015-07-01

    Semiconductor quantum dots (QDs) have recently been incorporated into consumer displays and lighting technologies. Now that these materials are being produced on industrial scales, it is important to investigate scalable synthetic methods and less toxic materials and chemistries. To achieve these goals, we have synthesized cadmium-free, visible light-emitting QDs using a microwave-assisted continuous flow reactor. After synthesis, the CuInS2 QD cores underwent a near-complete Zn cation exchange reaction in a batch reactor, followed by the growth of a ZnS shell. Analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data indicate that the crystal structure changes from CuInS2 (chalcopyrite) to ZnS (zincblende) during the cation exchange reaction. Compositional analysis indicated that the core/shell QDs were 98 % ZnS, with Cu and In present at much lower concentrations. The photoluminescence (PL) peak position was blue shifted for longer cation exchange reactions, and it was found that the ZnS shell was necessary for improved PL stability. The synthesized QDs have a PL down conversion efficiency of 65 % when using a blue LED source.

  19. CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization

    PubMed Central

    2012-01-01

    CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm−2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated fabrication procedures and introduction of a linker molecule. PMID:23181940

  20. A High-Yield Synthesis of Chalcopyrite CuIn S 2 Nanoparticles with Exceptional Size Control

    DOE PAGES

    Sun, Chivin; Gardner, Joseph S.; Shurdha, Endrit; ...

    2009-01-01

    We repormore » t high-yield and efficient size-controlled syntheses of Chalcopyrite CuIn S 2 nanoparticles by decomposing molecular single source precursors (SSPs) via microwave irradiation in the presence of 1,2-ethanedithiol at reaction temperatures as low as 100 ° C and times as short as 30 minutes. The nanoparticles sizes were 1.8 nm to 10.8 nm as reaction temperatures were varied from 100 ° C to 200 ° C with the bandgaps from 2.71 eV to 1.28 eV with good size control and high yields (64%–95%). The resulting nanoparticles were analyzed by XRD, UV-Vis, ICP-OES, XPS, SEM, EDS, and HRTEM. Titration studies by 1 H NMR using SSP 1 with 1,2-ethanedithiol and benzyl mercaptan were conducted to elucidate the formation of Chalcopyrite CuIn S 2 nanoparticles.« less

  1. Soluble precursors for CuInSe2, CuIn(1-x)Ga(x)Se2, and Cu2ZnSn(S,Se)4 based on colloidal nanocrystals and molecular metal chalcogenide surface ligands.

    PubMed

    Jiang, Chengyang; Lee, Jong-Soo; Talapin, Dmitri V

    2012-03-21

    We report a new platform for design of soluble precursors for CuInSe(2) (CIS), Cu(In(1-x)Ga(x))Se(2) (CIGS), and Cu(2)ZnSn(S,Se)(4) (CZTS) phases for thin-film potovoltaics. To form these complex phases, we used colloidal nanocrystals (NCs) with metal chalcogenide complexes (MCCs) as surface ligands. The MCC ligands both provided colloidal stability and represented essential components of target phase. To obtain soluble precursors for CuInSe(2), we used Cu(2-x)Se NCs capped with In(2)Se(4)(2-) MCC surface ligands or CuInSe(2) NCs capped with {In(2)Cu(2)Se(4)S(3)}(3-) MCCs. A mixture of Cu(2-x)Se and ZnS NCs, both capped with Sn(2)S(6)(4-) or Sn(2)Se(6)(4-) ligands was used for solution deposition of CZTS films. Upon thermal annealing, the inorganic ligands reacted with NC cores forming well-crystallized pure ternary and quaternary phases. Solution-processed CIS and CZTS films featured large grain size and high phase purity, confirming the prospects of this approach for practical applications.

  2. Unique oxide overcoating of CuInS2/ZnS core/shell quantum dots with ZnGa2O4 for fabrication of white light-emitting diode with improved operational stability

    NASA Astrophysics Data System (ADS)

    Song, Woo-Seuk; Jang, Eun-Pyo; Kim, Jong-Hoon; Jang, Ho Seong; Yang, Heesun

    2013-02-01

    CuInS2 quantum dots (QDs) have been recently highlighted as blue-to-yellow color converters for the demonstration of QD-based white light-emitting diodes (LEDs) owing to their advantageous fluorescent attributes including a broadband yellow emission and exceptional quantum yield. Similar to other types of elaborate core/shell structured QDs, however, core/shell QDs of CuInS2/ZnS are also susceptible to the photo-induced degradation, rendering them inappropriate for the practical application to high operational stability white LED. In this study, CuInS2/ZnS QDs are overcoated with the unprecedented oxide phase of ZnGa2O4 to enhance their photostability, and the resulting CuInS2/ZnS/ZnGa2O4 QDs are characterized with X-ray diffraction and transmission electron microscope. The operational stability test of CuInS2/ZnS/ZnGa2O4 QD-based white LED is performed and compared with that of uncoated CuInS2/ZnS QD-based one, and the efficacy of ZnGa2O4 overlayer is proved in mitigating the photodegradation of QDs and thus improving the device stability.

  3. Photoelectrochemical properties of Cu(In0.75Ga0.25)3Se5 ordered vacancy compound

    NASA Astrophysics Data System (ADS)

    Djellal, L.; Doulache, M.; Trari, M.

    2011-08-01

    Ordered vacancy compound Cu(In0.75Ga0.25)3Se5 was synthesized by the fusion technique. The starting elements were sealed in evacuated silica tube and submitted to programmed thermal treatment. The x-ray diffraction confirmed the formation of the phase which crystallizes in the chalcopyrite structure. The elemental composition (Cu = 13.45 at.%, In = 22.14 at.%, Ga = 8.42 at.%, Se = 56.0 at.%) was determined by the energy dispersive spectroscopy. The optical gap (Eg) was obtained from the diffuse reflectance spectrum through the Kubelka-Munk equation. The dependence of the absorption coefficient (α) on the photon energy (hν) near the band edge is characteristic of directly allowed optical transition with Eg value of 1.27 eV. The high temperature conductivity data were fitted to a small lattice type polaron hopping based on the strong electron-lattice interaction with an effective mass of 0.76 mo. The material exhibits an excellent chemical stability in basic solution with a corrosion rate of 0.87 µmol per month. The photoelectrochemical characterization was done in KOH (0.5 M) electrolyte and the n-type conductivity was confirmed by the anodic photocurrent. The flat band potential (-0.78 VSCE) and the donor's density (2.73 × 1019 cm-3) were derived respectively from the slope and intercept with the potential axis of the Mott-Schottky plot. The results showed the potentiality of Cu(In0.75Ga0.25)3Se5 for the photoelectrochemical hydrogen evolution.

  4. Advances in thin-film solar cells for lightweight space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  5. Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation

    SciTech Connect

    Mise, Takahiro; Nakada, Tokio

    2012-09-15

    The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

  6. Highly stable CuInS2@ZnS:Al core@shell quantum dots: the role of aluminium self-passivation.

    PubMed

    Rao, Pinhua; Yao, Wei; Li, Zhichun; Kong, Long; Zhang, Wenqi; Li, Liang

    2015-05-25

    A simple approach was introduced to enhance the photostability of CuInS2@ZnS core@shell quantum dots (QDs) by doping aluminium into the ZnS shell. Aluminium in the as-prepared QDs was oxidized to Al2O3, which formed a passivation oxide layer that effectively prevents photo-degradation of QDs during long-term light irradiation.

  7. Totally solution-processed CuInS2 solar cells based on chloride inks: reduced metastable phases and improved current density

    NASA Astrophysics Data System (ADS)

    Dehghani, Mehdi; Behjat, Abbas; Tajabadi, Fariba; Taghavinia, Nima

    2015-03-01

    Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. These Cd-free devices are structured by FTO/TiO2/In2S3/CIS/carbon, where TiO2 and In2S3 are deposited by spray pyrolysis, and a CIS film is deposited using spin-coating followed by annealing at 250 °C. The pasted carbon layer is utilized as the anode. No further sulfurization or selenization is employed. The Cu/In ratio in the ink is found as a critical factor affecting the morphology and crystallinity of the film as well as the photovoltaic performance of the device. An optimum Cu/In = 1.05 results in large-grain films with sharp diffraction peaks and, subsequently, optimal series resistance and shunt conductance. It is also found that the chloride-based ink results in CIS films with considerably reduced metastable phases, compared to the conventional acetate-based inks. A current density of 23.6 mA cm-2 is obtained for the best devices, leading to a conversion efficiency of 4.1%.

  8. 3-Aminophenylboronic acid-functionalized CuInS2 quantum dots as a near-infrared fluorescence probe for the detection of dicyandiamide.

    PubMed

    Liu, Siyu; Pang, Shu; Huang, Hui; Su, Xingguang

    2014-11-21

    In this paper, a simple and highly selective method for the determination of dicyandiamide (DCD) was developed based on the fluorescence quenching of functionalized CuInS2 quantum dots (QDs). Water-soluble CuInS2 QDs, capped by mercaptopropionic acid, were directly synthesized in aqueous solution and then covalently linked to 3-aminophenylboronic acid molecules to form the 3-aminophenylboronic acid-functionalized CuInS2 QDs (F-CuInS2 QDs) that had a fairly symmetric fluorescence emission centered at 736 nm. Based on the cyclization of the guanidine group of DCD with 2,3-butanedione and 3-aminophenylboronic acid, the fluorescence of the F-CuInS2 QDs is quenched by DCD in the presence of 2,3-butanedione. This method effectively distinguishes DCD from other amino acids and nitrogen pollutants, such as melamine, in real milk samples. Under optimum conditions, there was a good linear relationship between the fluorescence intensity of F-CuInS2 QDs and the concentration of DCD in the range of 2.0 × 10(-6) to 2.0 × 10(-3) mol L(-1), with a detection limit of 0.6 μmol L(-1).

  9. Effect of Cu/In molar ratio on the microstructural and optical properties of microcrystalline CuInS{sub 2} prepared by solvothermal route

    SciTech Connect

    Das, Kajari; Panda, Subhendu K.; Gorai, Soma; Mishra, Pratima; Chaudhuri, Subhadra

    2008-10-02

    Synthesis and characterization of CuInS{sub 2} powder sample prepared by a simple and convenient solvothermal method is reported. The influence of the variation of Cu/In molar ratio from 0.69 to 1.25 on the particle morphology, crystal structure and optical properties of CuInS{sub 2} samples was studied. The X-ray diffraction studies indicated that the samples were polycrystalline in nature. SEM images of the samples revealed that the copper-rich products were uniform microspheres with smooth surfaces, whereas microspheres formed by network of interconnected flakes were obtained for indium-rich products. The optical band gaps (E{sub g}) of the products decreased from 1.60 to 1.43 eV with variation of Cu/In molar ratio. The variation of the Urbach tail width with Cu/In molar ratio indicated that the density of the defects is much higher for the indium-rich CuInS{sub 2}, which was clearly revealed from Raman measurements.

  10. Cadmium-free CuInS2/ZnS quantum dots for sentinel lymph node imaging with reduced toxicity.

    PubMed

    Pons, Thomas; Pic, Emilie; Lequeux, Nicolas; Cassette, Elsa; Bezdetnaya, Lina; Guillemin, François; Marchal, Frédéric; Dubertret, Benoit

    2010-05-25

    Semiconductor quantum dots (QDs) could significantly impact the performance of biomedical near-infrared (NIR) imaging by providing fluorescent probes that are brighter and more photostable than conventional organic dyes. However, the toxicity of the components of NIR emitting II-VI and IV-VI QDs that have been made so far (Cd, Hg, Te, Pb, etc.) has remained a major obstacle to the clinical use of QDs. Here, we present the synthesis of CuInS(2)/ZnS core/shell QDs emitting in the NIR ( approximately 800 nm) with good quantum yield and stability even after transfer into water. We demonstrate the potential of these QDs by imaging two regional lymph nodes (LNs) in vivo in mice. We then compare the inflammatory response of the axillary LN induced by different doses of CuInS(2)/ZnS and CdTeSe/CdZnS QDs and show a clear difference in acute local toxicity, the onset of inflammation only occurring at a 10 times more concentrated dose for CuInS(2)/ZnS QDs than for their Cd-containing counterparts.

  11. Energy transfer in aggregated CuInS2/ZnS core-shell quantum dots deposited as solid films

    NASA Astrophysics Data System (ADS)

    Gardelis, S.; Fakis, M.; Droseros, N.; Georgiadou, D.; Travlos, A.; Nassiopoulou, A. G.

    2017-01-01

    We report on the morphology and optical properties of CuInS2/ZnS core-shell quantum dots in solid films by means of AFM, SEM, HRTEM, steady state and time-resolved photoluminescence (PL) spectroscopy. The amount of aggregation of the CuInS2/ZnS QDs was controlled by changing the preparation conditions of the films. A red-shift of the PL spectrum of CuInS2/ZnS core-shell quantum dots, deposited as solid films on silicon substrates, is observed upon increasing the amount of aggregation. The presence of larger aggregates was found to lead to a larger PL red-shift. Besides, as the degree of aggregation increased, the PL decay became slower. We attribute the observed PL red-shift to energy transfer from the smaller to the larger dots within the aggregates, with the emission being realized via a long decay recombination mechanism (100-200 ns), the origin of which is discussed.

  12. Development of CIGS2 Thin Films on Ultralightweight Flexible Large Area Foil Sunstrates

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

    2005-01-01

    The development of thin film solar cells is aimed at reducing the costs for photovoltaic systems. Use of thin film technology and thin foil substrate such as 5-mil thick stainless steel foil or 1-mil thick Ti would result in considerable costs savings. Another important aspect is manufacturing cost. Current single crystal technology for space power can cost more than $ 300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn1-xGaxS2 (CIGS2), CuIn(1-x)Ga(x)Se(2-y)S(y) (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite for example, the array manufacturing cost alone may exceed $ 2 million. Moving to thin film technology could reduce this expense to less than $ 500K. Earlier publications have demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6 in x 4 in) substrates. This paper presents the developmental study of achieving stress free Mo coating; uniform coatings of Mo back contact and metallic precursors. The paper also presents the development of sol gel process, refurbishment of selenization/sulfurization furnace, chemical bath deposition (CBD) for n-type CdS and scrubber for detoxification of H2S and H2Se gases.

  13. High efficiency copper ternary thin film solar cells

    SciTech Connect

    Basol, B.M.; Kapur, V.K. )

    1991-04-01

    This report describes work to develop a high efficiency, thin film CuInSe{sub 2} solar cell using a potentially low-cost process. The technique used in this development program is a two-stage process. The two-stage process involves depositing the metallic elements of the CuInSe{sub 2} compound (i.e., Cu and In) on a substrate in the form of stacked layers, and then selenizing this stacked metallic film in an atmosphere containing Se. Early results showed that the electrodeposition/selenization technique could yield CuInSe{sub 2} films with good electrical and optical properties on small-area substrates. This report concentrates on the later half of the research effort; this portion was directed toward developing a two-stage process using evaporated Cu-In layers. The selenization technique has the potential of yielding solar cells with efficiencies in excess of 15 percent. 7 refs., 12 figs.

  14. Charge carrier dynamics investigation of CuInS2 quantum dots films using injected charge extraction by linearly increasing voltage (i-CELIV): the role of ZnS Shell

    NASA Astrophysics Data System (ADS)

    Bi, Ke; Sui, Ning; Zhang, Liquan; Wang, Yinghui; Liu, Qinghui; Tan, Mingrui; Zhou, Qiang; Zhang, Hanzhuang

    2016-12-01

    The role of ZnS shell on the photo-physical properties within CuInS2/ZnS quantum dots (QDs) is carefully studied in optoelectronic devices. Linearly increasing voltage technique has been employed to investigate the charge carrier dynamics of both CuInS2 and CuInS2/ZnS QDs films. This study shows that charge carriers follow a similar behavior of monomolecular recombination in this film, with their charge transfer rate correlates to the increase of applied voltage. It turns out that the ZnS shell could affect the carrier diffusion process through depressing the trapping states and would build up a potential barrier.

  15. Aqueous Solution-Phase Selenized CuIn(S,Se)2 Thin Film Solar Cells Annealed under Inert Atmosphere.

    PubMed

    Oh, Yunjung; Yang, Wooseok; Kim, Jimin; Woo, Kyoohee; Moon, Jooho

    2015-10-14

    A nonvacuum solution-based approach can potentially be used to realize low cost, roll-to-roll fabrication of chalcopyrite CuIn(S,Se)2 (CISSe) thin film solar cells. However, most solution-based fabrication methods involve highly toxic solvents and inevitably require sulfurization and/or postselenization with hazardous H2S/H2Se gases. Herein, we introduce novel aqueous-based Cu-In-S and Se inks that contain an amine additive for producing a high-quality absorber layer. CISSe films were fabricated by simple deposition of Cu-In-S ink and Se ink followed by annealing under an inert atmosphere. Compositional and phase analyses confirmed that our simple aqueous ink-based method facilitated in-site selenization of the CIS layer. In addition, we investigated the molecular structures of our aqueous inks to determine how crystalline chalcopyrite absorber layers developed without sulfurization and/or postselenization. CISSe thin film solar cells annealed at 550 °C exhibited an efficiency of 4.55% under AM 1.5 illumination. The low-cost, nonvacuum method to deposit chalcopyrite absorber layers described here allows for safe and simple processing of thin film solar cells.

  16. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael; Banger, Kal; Harris, Jerry; Hepp, Aloysius

    2003-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  17. Superstrate CuInS2 photovoltaics with enhanced performance using a CdS/ZnO nanorod array.

    PubMed

    Lee, Dongwook; Yong, Kijung

    2012-12-01

    An air-stable, low-temperature, solution-based process for preparing CuInS(2) (CIS) superstrate solar cells using CdS-decorated ZnO nanorod (NR) arrays is reported. Efficient light harvesting and photoexcited charge transport were achieved by fabricating a ZnO NR window layer with a large p-n junction area via a hydrothermal reaction. A CdS buffer layer was deposited on a transparent ZnO NR substrate at room temperature via successive ion layer adsorption and reaction (SILAR) or nanocrystal layer deposition (NCLD). The prepared CdS/ZnO NR assembly was coated with a CIS absorber layer without the need for surface passivation organics or dispersion reagents. The CIS precursor solution, prepared using a metal salt, thiourea, and an amine solvent, yielded CIS nanocrystals (NCs) at temperatures up to 250 °C. The CIS/CdS/ZnO NR heterojunction structure exhibited an excellent photovoltaic performance compared to a planar ZnO film device due to enhanced light transmittance toward the absorber and a high charge collection efficiency. These results suggest that a superstrate CIS/CdS/ZnO NRs photovoltaic cell fabricated via the low-cost route described here has great potential as a next-generation solar cell device.

  18. Excitonic luminescence of polycrystalline CuInS2 solar cell material under the influence of strain

    NASA Astrophysics Data System (ADS)

    Eberhardt, J.; Metzner, H.; Schulz, K.; Reislöhner, U.; Hahn, Th.; Cieslak, J.; Witthuhn, W.; Goldhahn, R.; Hudert, F.; Kräußlich, J.

    2007-08-01

    Using molecular beams, polycrystalline CuInS2 (CIS) films were deposited on Mo-covered Si substrates. In order to investigate the influence of growth-induced strain on the optical and structural properties, detailed photoluminescence, photoreflectance and x-ray diffraction (XRD) measurements were performed. The transition energy of the free A-exciton (FXA) transition decreases with (i) decreasing thickness of the CIS layer at a constant thickness of the Mo buffer layer and (ii) increasing thickness of the Mo buffer layer at a constant CIS layer thickness. This appreciable redshift of FXA is accompanied by an increase of the energetic splittings between FXA, FXB, and FXC. When we compare theoretically predicted valence band splittings as a function of the crystal field—obtained from the calculated relative valence band energies—to our experimental values, a completely coherent picture is obtained. We also derived the structure of the conduction band as a function of crystal field, based on the theoretically expected valence band structures combined with the measured transition energies of FXA, FXB, and FXC. The XRD data show the increasing strain to occur with decreasing lattice spacings in growth direction.

  19. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  20. Mo/Cu(In, Ga)Se 2 back interface chemical and optical properties for ultrathin CIGSe solar cells

    NASA Astrophysics Data System (ADS)

    Erfurth, F.; Jehl, Z.; Bouttemy, M.; Dahan, N.; Tran-Van, P.; Gerard, I.; Etcheberry, A.; Greffet, J.-J.; Powalla, M.; Voorwinden, G.; Lincot, D.; Guillemoles, J. F.; Naghavi, N.

    2012-01-01

    Chemical and optical properties of the interface between a coevaporated Cu(In,Ga)Se2 (CIGSe) absorber thin film and the Mo back contact are investigated with the objective to reduce markedly the thickness of CIGSe layers from two microns down to about 100 nm. First a mechanical lift off technique allowed to separate Mo and CIGSe layers and perform X-ray photoelectron spectroscopy (XPS) and elipsometry studies on as prepared surfaces. On the Mo side small amounts of In and Ga are observed together with the formation of an MoSe2 layer. There is no evidence of the presence of Cu. On the opposite CIGSe side a clear depletion of Cu together with an enrichment of Ga is evidenced. There is no evidence of Mo. Optical reflectivity of the interface CIGSe/Mo is studied by ellipsometry showing a low reflectivity of the interface attributed to the formation of MoSe2 layer. The enhance light absorption in ultrathin absorbers using alternative, highly reflective back contacts are finally discussed.

  1. Inkjet Printed Metallizations for Cu(In1-xGax)Se2 Photovoltaic Cells

    SciTech Connect

    Hersh, P. A.; Curtis, C. J.; van Hest, M. F. A. M.; Kreuder, J. J.; Pasquarelli, R.; Miednaer, A.; Ginley, D. S.

    2011-12-01

    This study reports the inkjet printing of Ag front contacts on Aluminum doped Zinc Oxide (AZO)/intrinsic Zinc Oxide (i-ZnO)/CdS/Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (CIGS)/Mo thin film photovoltaic cells. The printed Ag contacts are being developed to replace the currently employed evaporated Ni/Al bi-layer contacts. Inkjet deposition conditions were optimized to reduce line resistivity and reduce contact resistance to the Al:ZnO layer. Ag lines printed at a substrate temperature of 200 C showed a line resistivity of 2.06 {mu}{Omega} {center_dot} cm and a contact resistance to Al:ZnO of 8.2 {+-} 0.2 m{Omega} {center_dot} cm{sup 2} compared to 6.93 {+-} 0.3 m{Omega} {center_dot} cm{sup 2} for thermally evaporated contacts. These deposition conditions were used to deposit front contacts onto high quality CIGS thin film photovoltaic cells. The heating required to print the Ag contacts caused the performance to degrade compared to similar devices with evaporated Ni/Al contacts that were not heated. Devices with inkjet printed contacts showed 11.4% conversion efficiency compared to 14.8% with evaporated contacts. Strategies to minimize heating, which is detrimental for efficiency, during inkjet printing are proposed.

  2. Ageing studies on CuInS2/In2S3 junction (2.5×2cm2) deposited using automated spray machine

    NASA Astrophysics Data System (ADS)

    Santhosh, M. V.; Kartha, C. Sudha; Vijayakumar, K. P.

    2014-04-01

    CuInS2/In2S3 heterojunction photovoltaic device was realized in an area of 2.5 × 2 cm2 using automated spray pyrolysis machine which shows an open-circuit voltage of 432mV, short circuit current density of 6.33mA/cm2, fill factor of 34% and efficiency of 0.94%. Performance of the device was monitored up to 100 days and it was working quite well without the application of any protective coatings. The device maintains a fill factor of around 32% up to 80 days but other photovoltaic parameters had slight decrease.

  3. Improvement in properties of window layer of sprayed CuInS2/In2S3 solar cell by optimization of tin doping

    NASA Astrophysics Data System (ADS)

    Santhosh, M. V.; Sreejith, M. S.; Kartha, C. Sudha; Vijayakumar, K. P.

    2014-01-01

    Effect of diffusion of Tin in the window layer of CuInS2/In2S3 heterojunction photovoltaic device fabricated using automated spray pyrolysis machine, is presented in this paper. Considerable improvement in the device parameters was observed through this process. The best device obtained in this study had open-circuit voltage of 370mV, short circuit current density of 5.33mA/cm2, fill factor of 32% and efficiency of 0.65%.

  4. Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

    NASA Technical Reports Server (NTRS)

    Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  5. One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells.

    PubMed

    Harati, Mohammad; Jia, Jia; Giffard, Kévin; Pellarin, Kyle; Hewson, Carly; Love, David A; Lau, Woon Ming; Ding, Zhifeng

    2010-12-14

    Herein we report the one-pot electrodeposition of copper indium gallium diselenide, CuIn(1-x)Ga(x)Se(2) (CIGS), thin films as the p-type semiconductor in an ionic liquid medium consisting of choline chloride/urea eutectic mixture known as Reline. The thin films were characterized by scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman microspectroscopy, and UV-visible spectroscopy. Based on the results of the characterizations, the electrochemical bath recipe was optimized to obtain stoichiometric CIGS films with x between 0.2 and 0.4. The chemical activity and photoreactivity of the optimized CIGS films were found to be uniform using scanning electrochemical microscopy and scanning photoelectrochemical microscopy. Low-cost stoichiometric CIGS thin films in one-pot were successfully fabricated.

  6. Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination.

    PubMed

    Xu, Xueqing; Wan, Qingcui; Luan, Chunyan; Mei, Fengjiao; Zhao, Qian; An, Ping; Liang, Zhurong; Xu, Gang; Zapien, Juan Antonio

    2013-11-13

    Tetragonal CuInS2 (CIS) has been successfully deposited onto mesoporous TiO2 films by in-sequence growth of InxS and CuyS via a successive ionic layer absorption and reaction (SILAR) process and postdeposition annealing in sulfur ambiance. X-ray diffraction and Raman measurements showed that the obtained tetragonal CIS consisted of a chalcopyrite phase and Cu-Au ordering, which related with the antisite defect states. For a fixed Cu-S deposition cycle, an interface layer of β-In2S3 formed at the TiO2/CIS interface with suitable excess deposition of In-S. In the meantime, the content of the Cu-Au ordering phase decreased to a reasonable level. These facts resulted in the retardance of electron recombination in the cells, which is proposed to be dominated by electron transfer from the conduction band of TiO2 to the unoccupied defect states in CIS via exponentially distributed surface states. As a result, a relatively high efficiency of ~0.92% (V(oc) = 0.35 V, J(sc) = 8.49 mA cm(-2), and FF = 0.31) has been obtained. Last, but not least, with an overloading of the sensitizers, a decrease in the interface area between the sensitized TiO2 and electrolytes resulted in deceleration of hole extraction from CIS to the electrolytes, leading to a decrease in the fill factor of the solar cells. It is indicated that the unoccupied states in CIS with energy levels below EF0 of the TiO2 films play an important role in the interface electron recombination at low potentials and has a great influence on the fill factor of the solar cells.

  7. Optical constants of Cu(In, Ga)Se{sub 2} for arbitrary Cu and Ga compositions

    SciTech Connect

    Minoura, Shota; Kodera, Keita; Nakane, Akihiro; Fujiwara, Hiroyuki; Maekawa, Takuji; Niki, Shigeru

    2015-05-21

    The optical constants of Cu(In, Ga)Se{sub 2} (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

  8. Physical vapor deposition and analysis of copper indium aluminum diselenide thin films for high band gap solar cells

    NASA Astrophysics Data System (ADS)

    Haimbodi, Moses Warotua

    CuInSe2 films and related alloys have been used to fabricate the highest efficiency thin film solar cells. Alloying CuInSe2 with CuAlSe2 provides a way to engineer the band gap of the resulting films from 1 to 2.7 eV, thereby providing a pathway for improving device performance. In this work, thin films of CuIn1-xAlxSe 2 obtained by multi-source PVD were characterized and investigated for their potential use as high band gap solar cells. The band gap of the films was varied by controlling the [Al]/[Al + In] ratio. Deposition of these films with varying [Cu]/[Al + In] ratios and thickness (1--4 mum) was carried out at substrate temperatures from 350--530°C. CuIn1-xAlxSe2 based solar cells have been fabricated using the structure glass/Mo/CuIn1-xAl xSe2/CdS/ZnO/grid. The effect of varying the band gap on device performance will be discussed. The highest efficiency obtained in this work is 11% using a film with Eg ≈ 1.3 eV. For high Al content, x > 0.3, device-performance decreases mainly due to poor FF similar to that observed in CuIn1-xGaxSe2 devices and is attributed to poor minority carrier collection. For CuIn1-xAlxSe2 films with x = 1, data is analyzed and presented with respect to [Cu]/[Al] and Se to total metal flux ratio, RSe/RM. Phase analysis shows that the resulting films contain different phases that depend on these parameters. Several of these films also contain concentrations of oxygen varying from 12 to 60 at. % as the [Cu]/[Al] ratio decreases. For RSe/R M > 10, a new structure we label as CuxAlySe z was observed. The oxygen content in all of the films obtained under RSe/RM > 10 vary between 1--3 at. %. Based on the Cu-Se, Al-Se, Cu-Al binary and the Cu2Se-Al2Se 3 pseudo-binary phase diagrams, a phenomenological film growth model is presented showing that the film growth kinetics are controlled by the delivery of Se.

  9. Fabrication of MnFe2O4-CuInS2/ZnS Magnetofluorescent Nanocomposites and Their Characterization.

    PubMed

    Demillo, Violeta G; Liao, Mingxia; Zhu, Xiaoshan; Redelman, Doug; Publicover, Nelson G; Hunter, Kenneth W

    2015-01-05

    Magnetofluorescent nanocomposites (MFNCs) providing a single nanoscale platform with multimodal properties are gaining momentum in biological manipulation, biomedical imaging and therapy. In this work, we report the preparation of MFNCs integrating MnFe2O4 magnetic nanoparticles (MNPs), CuInS2/ZnS quantum dots (QDs) and poly(ethylene glycol)-b-poly(lactide-co-glycolide) (PEG-PLGA) in a tetrahydrofuran (THF)/water solvent system. Through sonication and quick solvent displacement, multiple nanoparticles of each type are co-encapsulated within the hydrophobic core of PEG-PLGA micelles. The developed fabrication process is simple and fast. Moreover, due to the low toxicity of CuInS2/ZnS QDs, the fabrication process is environmentally benign. The fabricated MFNCs were further characterized regarding their fundamental physical, chemical and biological properties. Results reveal that the MFNCs possess high (Mn + Fe) recovery rates, and the optical properties and magnetic relaxivity of the MFNCs are sensitive to the MNP:QD mass ratios in the fabrication. Furthermore, the MFNCs present excellent stability in aqueous solutions, minimal cytotoxicity, and capability for bioconjugation. This study opens an avenue for the MFNCs to be employed in broad biological or biomedical applications.

  10. Fabrication of MnFe2O4-CuInS2/ZnS Magnetofluorescent Nanocomposites and Their Characterization

    PubMed Central

    Demillo, Violeta G.; Liao, Mingxia; Zhu, Xiaoshan; Redelman, Doug; Publicover, Nelson G.; Hunter, Kenneth W.

    2014-01-01

    Magnetofluorescent nanocomposites (MFNCs) providing a single nanoscale platform with multimodal properties are gaining momentum in biological manipulation, biomedical imaging and therapy. In this work, we report the preparation of MFNCs integrating MnFe2O4 magnetic nanoparticles (MNPs), CuInS2/ZnS quantum dots (QDs) and poly(ethylene glycol)-b-poly(lactide-co-glycolide) (PEG-PLGA) in a tetrahydrofuran (THF)/water solvent system. Through sonication and quick solvent displacement, multiple nanoparticles of each type are co-encapsulated within the hydrophobic core of PEG-PLGA micelles. The developed fabrication process is simple and fast. Moreover, due to the low toxicity of CuInS2/ZnS QDs, the fabrication process is environmentally benign. The fabricated MFNCs were further characterized regarding their fundamental physical, chemical and biological properties. Results reveal that the MFNCs possess high (Mn + Fe) recovery rates, and the optical properties and magnetic relaxivity of the MFNCs are sensitive to the MNP:QD mass ratios in the fabrication. Furthermore, the MFNCs present excellent stability in aqueous solutions, minimal cytotoxicity, and capability for bioconjugation. This study opens an avenue for the MFNCs to be employed in broad biological or biomedical applications. PMID:25484523

  11. Thin Film Solar Cells: Organic, Inorganic and Hybrid

    NASA Technical Reports Server (NTRS)

    Dankovich, John

    2004-01-01

    Thin film solar cells are an important developing resource for hundreds of applications including space travel. In addition to being more cost effective than traditional single crystal silicon cells, thin film multi-crystaline cells are plastic and light weight. The plasticity of the cells allows for whole solar panels to be rolled out from reams. Organic layers are being investigated in order to increase the efficiency of the cells to create an organic / inorganic hybrid cell. The main focus of the group is a thin film inorganic cell made with the absorber CuInS2. So far the group has been successful in creating the layer from a single-source precursor. They also use a unique method of film deposition called chemical vapor deposition for this. The general makeup of the cell is a molybdenum back contact with the CuInS2 layer, then CdS, ZnO and aluminum top contacts. While working cells have been produced, the efficiency so far has been low. Along with quantum dot fabrication the side project of this that is currently being studied is adding a polymer layer to increase efficiency. The polymer that we are using is P3OT (Poly(3-octylthiopene-2,5-diyll), retroregular). Before (and if) it is added to the cell, it must be understood in itself. To do this simple diodes are being constructed to begin to look at its behavior. The P3OT is spin coated onto indium tin oxide and silver or aluminum contacts are added. This method is being studied in order to find the optimal thickness of the layer as well as other important considerations that may later affect the composition of the finished solar cell. Because the sun is the most abundant renewable, energy source that we have, it is important to learn how to harness that energy and begin to move away from our other depleted non-renewable energy sources. While traditional silicon cells currently create electricity at relatively high efficiencies, they have drawbacks such as weight and rigidness that make them unattractive

  12. XPS Investigation of Surface Secondary Phase Segregation in CIGS Thin Film

    SciTech Connect

    Al-Thani, H. A.; Abdullah, M. M.; Hasoon, F. S.

    2011-01-01

    Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on Molybdenum (Mo) coated soda lime glass (SLG/Mo) substrates, using physical vapor deposition (PVD) 3-stage process. The Mo thin films were sputtered on SLG substrates using DC planar magnetron sputtering at a working gas (Ar) pressure that varies from 0.8 mT to 12 mT with a sputtering power density of 1.2 W/cm{sub 2}. The sputtering pressure of Mo thin films was varied in order to induce variations in the sputtered films morphology and porosity; as well as to subsequently induce variations in the Na out-diffusion from SLG substrate. The surface chemistry of CIGS thin films was investigated by X-Ray Photoelectron Spectroscopy (XPS). The XPS surface surveys (top 30A) and depth profiling survey (top 100A) for the elements, their chemical states, and their relative concentration were analyzed for CIGS thin films. The XPS surface analysis and composition of CIGS thin films were correlated to the bulk composition and Na out-diffusion in the CIGS films from SLG substrates.

  13. Synthesis and Nanostructures of Metal Selenide Precursors for Cu(In,Ga)Se2 Thin-Film Solar Cells.

    PubMed

    Cha, Ji-Hyun; Noh, Se Jin; Jung, Duk-Young

    2015-07-20

    A nanoink solution-based process was developed as a low-costing method for the fabrication of Cu(In,Ga)Se2 (CIGSe) thin-film photovoltaic cells. The sonochemical synthesis of CIGSe nanocrystals of the nanoink through step-by-step mixing of the reactants was investigated. To achieve the ideal stoichiometry of Cu(In0.7 Ga0.3 )Se2 to tune the bandgap and to fabricate high-efficiency photovoltaic cells, the synthetic parameters, the concentration of hydrazine, and the amount used of the gallium precursor were investigated. As the hydrazine concentration increased, gallium loss was observed in the CIGSe product. The gallium content in the reactant mixture strongly affected the metal stoichiometry of the prepared CIGSe nanocrystals. The nanoink solution based fabrication of thin-film photovoltaic cells was also explored, and the resulting device showed a conversion efficiency of 5.17 %.

  14. Structure and Composition Analysis of Cu(In,Al)Se2 Thin Films Prepared by Rapid Thermal Selenization

    NASA Astrophysics Data System (ADS)

    Lee, Shi-Wei; Tseng, Bae-Heng

    2012-10-01

    Thin films of CuIn1-xAlxSe2 (CIAS) were prepared by stacked elemental precursor layers in an inert ambient. The stacking sequence of precursor layers may affect the kinetics of phase formation. The soda lime glass (SLG)/Cu/Al/In/Se sample heated at 750 °C for 30 s with a temperature ramp rate of 15 °C/s may react to form single-phase CIAS thin films with a chemical composition fairly close to the predetermined value. Transmission electron microscopy (TEM) analysis of a selenized film prepared at 600 °C revealed the segregation of the content of Al to the substrate side and a relatively large variation of Al distributed in a lateral direction as compared with those of other elements. Changing the Cu and Al layer sequence may affect the reaction paths and lead to the formation of a mixture of two CIAS quaternary phases with different compositions.

  15. Controlling morphology and crystallite size of Cu(In0.7Ga0.3)Se2 nano-crystals synthesized using a heating-up method

    NASA Astrophysics Data System (ADS)

    Hsu, Wei-Hsiang; Hsiang, Hsing-I.; Chia, Chih-Ta; Yen, Fu-Su

    2013-12-01

    CuIn0.7Ga0.3Se2(CIGS) nano-crystals were successfully synthesized via a heating-up process. The non-coordinating solvent (1-octadecene) and selenium/cations ratio effects on the crystalline phase and crystallite size of CIGS nano-crystallites were investigated. It was observed that the CIGS nano-crystallite morphology changed from sheet into spherical shape as the amount of 1-octadecene addition was increased. CIGS nano-crystals were obtained in 9-20 nm sizes as the selenium/cations ratio increased. These results suggest that the monomer reactivity in the solution can be adjusted by changing the solvent type and selenium/cations ratio, hence affecting the crystallite size and distribution.

  16. The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2003-01-01

    CuInS2 was deposited by spray pyrolysis using single-source precursors synthesized in-house. Films with either (112) or (204/220) preferred orientation always showed Cu-rich and In-rich composition respectively. The In-rich (204/220)-oriented films always contained a secondary phase evaluated as an In-rich compound, and the hindrance of (112)-oriented grain growth was confirmed by glancing angle X-ray diffraction. In conclusion, only the Cu-rich (112)-oriented films with dense columnar grains can be prepared without the secondary In-rich compound. The effect of extra Cu on the grain size and the solar cell results will be also presented.

  17. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

    NASA Astrophysics Data System (ADS)

    Kasai, S.; Takahashi, Y. K.; Cheng, P.-H.; Ikhtiar, Ohkubo, T.; Kondou, K.; Otani, Y.; Mitani, S.; Hono, K.

    2016-07-01

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  18. Fabrication and centeracterization of ordered CuIn(1-x)GaxSe2 nanopore films via template-based electrodeposition.

    PubMed

    Li, Ming; Zheng, Maojun; Zhou, Tao; Li, Changli; Ma, Li; Shen, Wenzhong

    2012-12-17

    Ordered CuIn(1-x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting.

  19. Fabrication and centeracterization of ordered CuIn(1−x)GaxSe2 nanopore films via template-based electrodeposition

    PubMed Central

    2012-01-01

    Ordered CuIn(1−x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting. PMID:23245846

  20. Fabrication of high color rendering index white LED using Cd-free wavelength tunable Zn doped CuInS2 nanocrystals.

    PubMed

    Chung, Wonkeun; Jung, Hyunchul; Lee, Chang Hun; Kim, Sung Hyun

    2012-10-22

    Highly luminescent Cd-free Zn doped CuInS(2) nanocrystals (ZCIS NCs) were synthesized, and their properties were evaluated using X-ray diffraction, Raman, UV, and photoluminescence. The crystal structure of the ZCIS NCs was similar to the zinc blende, and the lattice constant decreased with increasing Zn concentration. By incorporation of Zn, the emission wavelength was tuned from 536 to 637 nm with concomitant enhancement of the quantum yield up to 45%. A white light emitting diodes, integrating dual ZCIS NCs (λ(em) = 567, and 617 nm) and a 460 nm InGaN LED, exhibited a high color rendering index of 84.1 with a warm color temperature of 4256.2K. The CIE-1931 chromaticity coordinates were slightly shifted from (0.3626, 0.3378) at 20 mA to (0.3480, 0.3206) at 50 mA.

  1. One-Pot controlled synthesis of spongelike CuInS(2) microspheres for efficient counter electrode with graphene assistance in dye-sensitized solar cells.

    PubMed

    Liu, Mingyang; Li, Guang; Chen, Xiaoshuang

    2014-02-26

    Spongelike CuInS2 3D microspheres were synthesized through a solvothermal method employing CuCl, InCl3, and thiourea as Cu, In, and S sources, respectively, and PVP as surfactant. The as-prepared products have regular spherical shapes with diameters of 0.8-3.7 μm, the spheres consisted of small nanosheets, which are composed of small nanoparticles. As an important solar cell material, its photovoltaic property was also tested and the results showed a solar energy conversion efficiency of 3.31%. With the help of reduced graphene, its conversion efficiency could be further increased to 6.18%. Compared with conventional Pt material used in counter electrodes of solar cells, this new material has an advantages of low-cost, facile synthesis and high efficiency with graphene assistance.

  2. Nanocrystalline Chalcopyrite Materials (CuInS2 and CuInSe2) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Castro, Stephanie L.; Bailey, Sheila G.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Hepp, Aloysius F.

    2003-01-01

    Nanometer sized particles of the chalcopyrite compounds CuInS2 and CuInSe2 were synthesized by thermal decomposition of molecular single-source precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively, in the non-coordinating solvent dioctyl phthalate at temperatures between 200 and 300 C. The nanoparticles range in size from 3 - 30 nm and are aggregated to form roughly spherical clusters of about 500 nm in diameter. X-ray diffraction of the nanoparticle powders shows greatly broadened lines indicative of very small particle sizes, which is confirmed by TEM. Peaks present in the XRD can be indexed to reference patterns for the respective chalcopyrite compounds. Optical spectroscopy and elemental analysis by energy dispersive spectroscopy support the identification of the nanoparticles as chalcopyrites.

  3. Near-Infrared Emitting CuInSe2/CuInS2 Dot Core/Rod Shell Heteronanorods by Sequential Cation Exchange

    PubMed Central

    2015-01-01

    The direct synthesis of heteronanocrystals (HNCs) combining different ternary semiconductors is challenging and has not yet been successful. Here, we report a sequential topotactic cation exchange (CE) pathway that yields CuInSe2/CuInS2 dot core/rod shell nanorods with near-infrared luminescence. In our approach, the Cu+ extraction rate is coupled to the In3+ incorporation rate by the use of a stoichiometric trioctylphosphine-InCl3 complex, which fulfills the roles of both In-source and Cu-extracting agent. In this way, Cu+ ions can be extracted by trioctylphosphine ligands only when the In–P bond is broken. This results in readily available In3+ ions at the same surface site from which the Cu+ is extracted, making the process a direct place exchange reaction and shifting the overall energy balance in favor of the CE. Consequently, controlled cation exchange can occur even in large and anisotropic heterostructured nanocrystals with preservation of the size, shape, and heterostructuring of the template NCs into the product NCs. The cation exchange is self-limited, stopping when the ternary core/shell CuInSe2/CuInS2 composition is reached. The method is very versatile, successfully yielding a variety of luminescent CuInX2 (X = S, Se, and Te) quantum dots, nanorods, and HNCs, by using Cd-chalcogenide NCs and HNCs as templates. The approach reported here thus opens up routes toward materials with unprecedented properties, which would otherwise remain inaccessible. PMID:26449673

  4. Thin-Film Solar Cells on Metal Foil Substrates for Space Power

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

    2004-01-01

    Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved

  5. Lattice Dynamical Properties and Elastic Constants of the Ternary Chalcopyrite Compounds CuAlS2, CuGaS2, CuInS2, and AgGaS2

    NASA Astrophysics Data System (ADS)

    Kushwaha, A. K.; Khenata, R.; Bouhemadou, A.; Bin-Omran, S.; Haddadi, K.

    2017-02-01

    Lattice dynamics calculations have been performed for ternary chalcopyrite compounds CuAlS2, CuGaS2, CuInS2, and AgGaS2 using the proposed theoretical model. This model is applied to study the zone-centre (GAMMA = 0) phonon frequencies of CuAlS2, CuGaS2, CuInS2, and AgGaS2. The interatomic interactions up to third nearest neighbours were calculated. The calculated zone-centre phonon frequencies are found to be in very good agreement with observed and previous calculated data available in the literature. Single crystal elastic constants and related properties for these materials were also calculated and compared with the available data in the scientific literature.

  6. High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

    NASA Astrophysics Data System (ADS)

    Mukaiyama, Koki; Kasai, Shinya; Takahashi, Yukiko K.; Kondou, Kouta; Otani, Yoshichika; Mitani, Seiji; Hono, Kazuhiro

    2017-01-01

    Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 Ω·µm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5 Ω·µm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.

  7. Optical spectroscopy reveals transition of CuInS2/ZnS to CuxZn1-xInS2/ZnS:Cu alloyed quantum dots with resultant double-defect luminescence

    NASA Astrophysics Data System (ADS)

    Yan, Ruolin; Zhang, Wenxia; Wu, Wenhui; Dong, Xingmin; Wang, Qiqi; Fan, Jiyang

    2016-12-01

    The structure and luminescence mechanisms of the CuInS2 quantum dots (QDs) after epitaxial growth of ZnS shell are in debate. The light absorption/emission spectroscopy reveals that after ZnS shell growth the cation diffusion at the CuInS2/ZnS interface results in formation of the alloyed CuxZn1- xInS2/ZnS:Cu QDs. These core/shell QDs exhibit dual-color photoluminescence with abnormal blue shift with decreasing excitation photon energy. The results show that the green and orange emissions originate separately from defects in the core and the shell. The absorption tail of the ZnS QDs turns from Urbach to Halperin-Lax type after Cu doping.

  8. An investigation on the growth of thin chalcopyrite CuInSe2 films by selenization of Cu-In alloys in a box

    NASA Astrophysics Data System (ADS)

    Parretta, A.; Addonizio, M. L.; Loreti, S.; Quercia, L.; Jayaraj, M. K.

    1998-01-01

    The morphological and structural properties of copper-indium alloys selenized in a box by selenium vapours have been studied by varying the thermal cycle of the selenization process. In the first series of selenizations, equal metallic precursors were exposed for 30 min to the selenium vapours at different temperatures in the range 175-405°C The chalcopyrite CuInSe 2 phase was found at temperatures as low as 250°C and as a single phase at T > 375°C. At low temperatures different copper selenides were found, like CuSe, Cu 2 - xSe and CuSe 2, which affected in a different way the composition and morphology of the film. Indium loss was detected in the 250-300°C range and was attributed to the evolution in the gas phase of the In 2Se species. Short selenization cycles were also used with the purpose of identifying the chemical precursors of CuInSe 2. The determination of the selenium content in the alloys at different temperatures allowed us to determine a 7 kcal/mol activation energy for the kinetics of selenium incorporation. Long selenizations at 450°C allowed us to obtain a large-grained, compact layer of chalcopyrite CuInSe 2 which could be used for the fabrication of photovoltaic devices.

  9. Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

    SciTech Connect

    Martin, Ina T.; Oyster, Tricia M.; Mansfield, Lorelle M.; Matthews, Rachael; Pentzer, Emily B.; French, Roger H.; Peshek, Timothy J.

    2016-11-21

    Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In, Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

  10. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  11. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition.

    PubMed

    Chen, Shih-Chen; Hsieh, Dan-Hua; Jiang, Hsin; Liao, Yu-Kuang; Lai, Fang-I; Chen, Chyong-Hua; Luo, Chih Wei; Juang, Jenh-Yih; Chueh, Yu-Lun; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

  12. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  13. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

    PubMed Central

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD. PMID:24959108

  14. Solution-Processed Cu(In, Ga)(S, Se)2 Nanocrystal as Inorganic Hole-Transporting Material for Efficient and Stable Perovskite Solar Cells.

    PubMed

    Xu, Lu; Deng, Lin-Long; Cao, Jing; Wang, Xin; Chen, Wei-Yi; Jiang, Zhiyuan

    2017-12-01

    Perovskite solar cells are emerging as one of the most promising candidates for solar energy harvesting. To date, most of the high-performance perovskite solar cells have exclusively employed organic hole-transporting materials (HTMs) such as 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) or polytriarylamine (PTAA) which are often expensive and have low hole mobility. Almost all these HTMs reported needed lithium salt, e.g., lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI) doping, to improve hole mobility and performance. However, the use of Li-TFSI should be avoided because the hygroscopic nature of Li-TFSI could cause decomposition of perovskite and reduce device stability. Herein, we employed solution-processed CuIn0.1Ga0.9(S0.9Se0.1)2 (CIGSSe) nanocrystals as a novel inorganic HTM in perovskite solar cells. A power conversion efficiency of 9.15% was obtained for CIGSSe-based devices with improved stability, compared to devices using spiro-OMeTAD as HTM. This work offers a promising candidate of Cu-based inorganic HTM for efficient and stable perovskite solar cells.

  15. Solution-Processed Cu(In, Ga)(S, Se)2 Nanocrystal as Inorganic Hole-Transporting Material for Efficient and Stable Perovskite Solar Cells

    NASA Astrophysics Data System (ADS)

    Xu, Lu; Deng, Lin-Long; Cao, Jing; Wang, Xin; Chen, Wei-Yi; Jiang, Zhiyuan

    2017-02-01

    Perovskite solar cells are emerging as one of the most promising candidates for solar energy harvesting. To date, most of the high-performance perovskite solar cells have exclusively employed organic hole-transporting materials (HTMs) such as 2,2',7,7'-tetrakis-( N, N-di- p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) or polytriarylamine (PTAA) which are often expensive and have low hole mobility. Almost all these HTMs reported needed lithium salt, e.g., lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI) doping, to improve hole mobility and performance. However, the use of Li-TFSI should be avoided because the hygroscopic nature of Li-TFSI could cause decomposition of perovskite and reduce device stability. Herein, we employed solution-processed CuIn0.1Ga0.9(S0.9Se0.1)2 (CIGSSe) nanocrystals as a novel inorganic HTM in perovskite solar cells. A power conversion efficiency of 9.15% was obtained for CIGSSe-based devices with improved stability, compared to devices using spiro-OMeTAD as HTM. This work offers a promising candidate of Cu-based inorganic HTM for efficient and stable perovskite solar cells.

  16. Enhanced thermoelectric performance of a chalcopyrite compound CuIn3Se5−xTex (x = 0~0.5) through crystal structure engineering

    PubMed Central

    Lu, Yufu; Chen, Shaoping; Wu, Wenchang; Du, Zhengliang; Chao, Yimin; Cui, Jiaolin

    2017-01-01

    In this work the chalcopyrite CuIn3Se5−xTex (x = 0~0.5) with space group through isoelectronic substitution of Te for Se have been prepared, and the crystal structure dilation has been observed with increasing Te content. This substitution allows the anion position displacement ∆u = 0.25-u to be zero at x ≈ 0.15. However, the material at x = 0.1 (∆u = 0.15 × 10−3), which is the critical Te content, presents the best thermoelectric (TE) performance with dimensionless figure of merit ZT = 0.4 at 930 K. As x value increases from 0.1, the quality factor B, which informs about how large a ZT can be expected for any given material, decreases, and the TE performance degrades gradually due to the reduction in nH and enhancement in κL. Combining with the ZTs from several chalcopyrite compounds, it is believable that the best thermoelectric performance can be achieved at a certain ∆u value (∆u ≠ 0) for a specific space group if their crystal structures can be engineered. PMID:28057940

  17. A facile in situ synthesis route for CuInS(2) quantum-dots/In(2)S(3) co-sensitized photoanodes with high photoelectric performance.

    PubMed

    Wang, Yuan-Qiang; Rui, Yi-Chuan; Zhang, Qing-Hong; Li, Yao-Gang; Wang, Hong-Zhi

    2013-11-27

    CuInS2 quantum-dot sensitized TiO2 photoanodes with In2S3 buffer layer were in situ prepared via chemical bath deposition of In2S3, where the Cd-free In2S3 layer then reacted with TiO2/CuxS which employed a facile SILAR process to deposit CuxS quantum dots on TiO2 film, followed by a covering process with ZnS layer. Polysulfide electrolyte and Cu2S on FTO glass counter electrode were used to provide higher photovoltaic performance of the constructed devices. The characteristics of the quantum dots sensitized solar cells were studied in more detail by optical measurements, photocurrent-voltage performance measurements, and impedance spectroscopy. On the basis of optimal CuxS SILAR cycles, the best photovoltaic performance with power conversion efficiency (η) of 1.62% (Jsc = 6.49 mA cm(-2), Voc = 0.50 V, FF = 0.50) under full one-sun illumination was achieved by using Cu2S counter electrode. Cu2S-FTO electrode exhibits superior electrocatalytic ability for the polysulfide redox reactions relative to that of Pt-FTO electrode.

  18. Self-assembled synthesis of 3D Cu(In1 - xGax)Se2 nanoarrays by one-step electroless deposition into ordered AAO template

    NASA Astrophysics Data System (ADS)

    Zhang, Bin; Zhou, Tao; Zheng, Maojun; Xiong, Zuzhou; Zhu, Changqing; Li, Hong; Wang, Faze; Ma, Li; Shen, Wenzhong

    2014-07-01

    Quaternary nanostructured Cu(In1 - xGax)Se2 (CIGS) arrays were successfully fabricated via a novel and simple solution-based protocol on the electroless deposition method, using a flexible, highly ordered anodic aluminium oxide (AAO) substrate. This method does not require electric power, complicated sensitization processes, or complexing agents, but provides nearly 100% pore fill factor to AAO templates. The field emission scanning electron microscopy (FE-SEM) images show that we obtained uniformly three-dimensional nanostructured CIGS arrays, and we can tailor the diameter and wall thicknesses of the nanostructure by adjusting the pore diameter of the AAO and metal Mo layer. Their chemical composition was determined by energy-dispersive spectroscopy analysis, which is very close to the stoichiometric value. The Raman spectroscopy, x-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) further confirm the formation of nanostructured CIGS with prominent chalcopyrite structure. The nanostructured CIGS arrays can support the design of low-cost, highlight-trapping, and enhanced carrier collection nanostructured solar cells.

  19. Effect of ph on the Electrodeposition of Cu(In, Al)Se2 from Aqueous Solution in Presence of Citric Acid as Complexing Agent

    NASA Astrophysics Data System (ADS)

    Ganjkhanlou, Yadolah; Ebadzadeh, Touradj; Kazemzad, Mahmood; Maghsoudipour, Amir; Kianpour-Rad, Mansoor

    2015-05-01

    Effect of pH on the one-step electrodeposition of Cu(In, Al)Se2 chalcopyrite layer in the presence of citric acid has been investigated by applying different electrochemical and characterization techniques. It has been observed that at pH of 1.5, nanocrystalline phase of chalcopyrite and small amount of binary phase of Cu2Se with overall composition of Cu0.91In0.32Al0.39Se2 have been deposited. On the other hand, at pH of 4, the film composition changed to Cu1.9In0.05Al0.21Se2 and an additional binary phase of copper selenide (CuSe) has also been formed. Morphological investigation illustrated that smooth and compact layer with fine spherical particles having the size of 20 nm has been obtained at pH of 1.5 whereas mixture of planar and spherical particles with size of 450-550 nm have been formed at pH of 4. In alkaline environment (pH 9), the deposition current has been noticeably decreased and no deposition occurred due to the formation of a stable complex of citric acid with metal ions. The mechanism of citric acid interaction with metal ions at different pH has also been studied by cyclic voltammetry measurement.

  20. Self-assembled synthesis of 3D Cu(In(1-x)Ga(x))Se2 nanoarrays by one-step electroless deposition into ordered AAO template.

    PubMed

    Zhang, Bin; Zhou, Tao; Zheng, Maojun; Xiong, Zuzhou; Zhu, Changqing; Li, Hong; Wang, Faze; Ma, Li; Shen, Wenzhong

    2014-07-25

    Quaternary nanostructured Cu(In1 - xGax)Se2 (CIGS) arrays were successfully fabricated via a novel and simple solution-based protocol on the electroless deposition method, using a flexible, highly ordered anodic aluminium oxide (AAO) substrate. This method does not require electric power, complicated sensitization processes, or complexing agents, but provides nearly 100% pore fill factor to AAO templates. The field emission scanning electron microscopy (FE-SEM) images show that we obtained uniformly three-dimensional nanostructured CIGS arrays, and we can tailor the diameter and wall thicknesses of the nanostructure by adjusting the pore diameter of the AAO and metal Mo layer. Their chemical composition was determined by energy-dispersive spectroscopy analysis, which is very close to the stoichiometric value. The Raman spectroscopy, x-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) further confirm the formation of nanostructured CIGS with prominent chalcopyrite structure. The nanostructured CIGS arrays can support the design of low-cost, highlight-trapping, and enhanced carrier collection nanostructured solar cells.

  1. Enhanced thermoelectric performance of a chalcopyrite compound CuIn3Se5‑xTex (x = 0~0.5) through crystal structure engineering

    NASA Astrophysics Data System (ADS)

    Lu, Yufu; Chen, Shaoping; Wu, Wenchang; Du, Zhengliang; Chao, Yimin; Cui, Jiaolin

    2017-01-01

    In this work the chalcopyrite CuIn3Se5‑xTex (x = 0~0.5) with space group through isoelectronic substitution of Te for Se have been prepared, and the crystal structure dilation has been observed with increasing Te content. This substitution allows the anion position displacement ∆u = 0.25-u to be zero at x ≈ 0.15. However, the material at x = 0.1 (∆u = 0.15 × 10‑3), which is the critical Te content, presents the best thermoelectric (TE) performance with dimensionless figure of merit ZT = 0.4 at 930 K. As x value increases from 0.1, the quality factor B, which informs about how large a ZT can be expected for any given material, decreases, and the TE performance degrades gradually due to the reduction in nH and enhancement in κL. Combining with the ZTs from several chalcopyrite compounds, it is believable that the best thermoelectric performance can be achieved at a certain ∆u value (∆u ≠ 0) for a specific space group if their crystal structures can be engineered.

  2. Thin Clouds

    Atmospheric Science Data Center

    2013-04-18

    ... one of a new generation of instruments flying aboard the NASA Earth Observing System's Terra satellite, views Earth with nine cameras ... of thin cirrus minutes after MISR imaged the cloud from space. At the same time, another NASA high-altitude jet, the WB-57, flew right ...

  3. Preparation of high-oriented molybdenum thin films using DC reactive magnetronsputtering

    NASA Astrophysics Data System (ADS)

    Shang, Zhengguo; Li, Dongling; Yin, She; Wang, Shengqiang

    2017-03-01

    Since molybdenum (Mo) thin film has been used widely recently, it attracts plenty of attention, like it is a good candidate of back contact material for CuIn1‑xGaxSe2‑ySy (CIGSeS) solar cells development; thanks to its more conductive and higher adhesive property. Besides, molybdenum thin film is an ideal material for aluminum nitride (AlN) thin film preparation and attributes to the tiny (‑1.0%) lattice mismatch between Mo and AlN. As we know that the quality of Mo thin film is mainly dependent on process conditions, it brings a practical significance to study the influence of process parameters on Mo thin film properties. In this work, various sputtering conditions are employed to explore the feasibility of depositing a layer of molybdenum film with good quality by DC reactive magnetron sputtering. The influence of process parameters such as power, gas flow, substrate temperature and process time on the crystallinity and crystal orientation of Mo thin films is investigated. X-ray diffraction (XRD) measurements and atomic force microscope (AFM) are used to characterize the properties and surface roughness, respectively. According to comparative analysis on the results, process parameters are optimized. The full width at half maximum (FWHM) of the rocking curves of the (110) Mo is decreased to 2.7∘, and the (110) Mo peaks reached 1.2 × 105 counts. The grain size and the surface roughness have been measured as 20 Å and 3.8 nm, respectively, at 200∘C.

  4. Interaction of ultra-short laser pulses with CIGS and CZTSe thin films

    NASA Astrophysics Data System (ADS)

    Gečys, P.; Markauskas, E.; Dudutis, J.; Račiukaitis, G.

    2014-01-01

    The thin-film solar cell technologies based on complex quaternary chalcopyrite and kesterite materials are becoming more attractive due to their potential for low production costs and optimal spectral performance. As in all thin-film technologies, high efficiency of small cells might be maintained with the transition to larger areas when small segments are interconnected in series to reduce photocurrent and related ohmic losses in thin films. Interconnect formation is based on the three scribing steps, and the use of a laser is here crucial for performance of the device. We present our simulation and experimental results on the ablation process investigations in complex CuIn1- x Ga x Se2 (CIGS) and Cu2ZnSn(S,Se)4 (CZTSe) cell's films using ultra-short pulsed infrared (~1 μm) lasers which can be applied to the damage-free front-side scribing processes. Two types of processes were investigated—direct laser ablation of ZnO:Al/CIGS films with a variable pulse duration of a femtosecond laser and the laser-induced material removal with a picosecond laser in the ZnO:Al/CZTSe structure. It has been found that the pulse energy and the number of laser pulses have a significantly stronger effect on the ablation quality in ZnO:Al/CIGS thin films rather than the laser pulse duration. For the thin-film scribing applications, it is very important to carefully select the processing parameters and use of ultra-short femtosecond pulses does not have a significant advantage compared to picosecond laser pulses. Investigations with the ZnO:Al/CZTSe thin films showed that process of the absorber layer removal was triggered by a micro-explosive effect induced by high pressure of sublimated material due to a rapid temperature increase at the molybdenum-CZTSe interface.

  5. In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells

    PubMed Central

    2013-01-01

    Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS2(CIS) layer as the photoabsorption material on nanoporous TiO2 film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO2 film in ethanol solution containing InCl3 · 4H2O, CuSO4 · 5H2O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl3 concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl3 concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO2 film, and CIS superstructures are in fact composed of ultrathin nanoplates as ‘petals’ with plenty of nanopores. In addition, the nanopores of TiO2 film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO2/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure. PMID:23947562

  6. Large-scale synthesis of highly emissive and photostable CuInS2/ZnS nanocrystals through hybrid flow reactor

    NASA Astrophysics Data System (ADS)

    Lee, Jun; Han, Chang-Soo

    2014-02-01

    We report a high-yield, low-cost synthesis route to colloidal CuInS2/ZnS (CIS/ZnS) nanocrystals (NCs) with Cu vacancies in the crystal lattice. Yellow-emitting CIS/ZnS core/shell NCs of high luminescence were facilely synthesized via a stepwise, consecutive hybrid flow reactor approach. It is based on serial combination of a batch-type mixer and a flow-type furnace. In this reactor, the flow rate of the solutions was typically 1 mL/min, 100 times larger than that of conventional microfluidic reactors. This method can produce gram quantities of material with a chemical yield in excess of 90% with minimal solvent waste. This is a noninjection-based approach in 1-dodecanethiol (DDT) with excellent synthetic reproducibility and large-scale capability. The optical features and structure of the obtained CIS/ZnS NCs have been characterized by UV-vis and fluorescence spectroscopies, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX) and high-resolution transmission electron microscopy (HRTEM). The resulting CIS/ZnS NCs in chloroform exhibit quantum yield (QY) of 61.4% with photoemission peaking at 561 nm and full width at half maximum (FWHM) of 92 nm. The as-synthesized CIS/ZnS NCs were proven to have excellent photostability. The synthesized CIS/ZnS NCs can be a promising fluorescent probe for biological imaging and color converting material for light-emitting diode due to Cd-free constituents.

  7. In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Chen, Zhigang; Tang, Minghua; Song, Linlin; Tang, Guoqiang; Zhang, Bingjie; Zhang, Lisha; Yang, Jianmao; Hu, Junqing

    2013-08-01

    Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS2 (CIS) layer as the photoabsorption material on nanoporous TiO2 film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO2 film in ethanol solution containing InCl3 · 4H2O, CuSO4 · 5H2O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl3 concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl3 concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO2 film, and CIS superstructures are in fact composed of ultrathin nanoplates as `petals' with plenty of nanopores. In addition, the nanopores of TiO2 film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO2/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure. PACS: 81.15.-z; 84.60.Jt; 73.40.Lq

  8. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  9. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  10. The effects of KCN etching on Cu-rich epitaxial CuInSe{sub 2} thin films

    SciTech Connect

    Fons, P.; Niki, S.; Yamada, A.; Kurafuji, T.; Nishitani, M.; Wada, T.

    1996-12-31

    A series of Cu-rich CuInSe{sub 2} epitaxial thin films were grown by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 C. All samples were grown with an excess of Cu. Electron microprobe analysis (EPMA) indicated a Cu/In ratio of about 2.1--2.6 in the as-grown films. Additionally, the Se/(In+Cu) ratio was observed to be {approximately}0.95 indicating that the films were slightly Se poor. These Cu-rich samples were etched in a KCN solution for periods ranging from 30 seconds to 3 minutes. EPMA measurements indicated that the bulk Cu/In ratio was reduced to {approximately}0.92 in all films regardless of etching time. Atomic force microscopy (AFM) was used to characterize the topology of each sample before and after etching. These measurements indicated that the precipitates present on the as-grown films were removed and large nearly isotropic holes were etched into the sample to a depth of over 1,000 {angstrom} even for etching times as short as 30 seconds. The samples were also evaluate both before and after etching using a Phillips MRD diffractometer with parallel beam optics and a 18,000 watt Cu rotating anode X-ray source in the chalcopyrite [001] , [101], and [112] directions. A peak was observed at {approximately}15 degrees in the [001] scan after etching consistent with the presence of the ordered vacancy compound, CuIn{sub 2}Se{sub 5}.

  11. Optical, electrical and structural characterization of CuInSe2 thin films

    NASA Astrophysics Data System (ADS)

    Calderón, C.; Gordillo, G.; Romero, E.; Bolaños, W.; Bartolo-Pérez, P.

    2005-07-01

    The present issue of physica status solidi (b) comprises papers presented at the XVII Latin American Symposium on Solid State Physics (SLAFES 2004) in Havana, Cuba, 6-9 December 2004. Further papers from this conference are published in phys. stat. sol. (c) 2, No. 10 (2005).The cover picture refers to the article [1] on polycrystalline CuInSe2 films by Clara Calderón et al. and shows the crystal structure of CuInSe2 (right) and that of the In-rich phase CuIn3Se5 (left) which were used for the simulation and analysis of the X-ray diffraction spectra.Clara Lilia Calderón Triana is teacher at the Solar Cells Laboratory of Universidad Nacional de Colombia in Bogotá where she has been working on solar cells and semiconductor materials since 1995. In particular, she is fabricating thin film solar cells based on CuInSe2 and Cu(In,Ga)Se2. At SLAFES 2004, Clara Calderón received the physica status solidi Young Researcher Award for her second presentation entitled Study of electrical transport properties of ZnO thin films used as front contact of solar cells [2] which is published as Editor's Choice of this issue.

  12. The effects of Na on high pressure phases of CuIn(0.5)Ga(0.5)Se(2) from ab initio calculation.

    PubMed

    Pluengphon, P; Bovornratanaraks, T; Vannarat, S; Pinsook, U

    2012-03-07

    The effects of Na atoms on high pressure structural phase transitions of CuIn(0.5)Ga(0.5)Se(2) (CIGS) were studied by an ab initio method using density functional theory. At ambient pressure, CIGS is known to have chalcopyrite (I42d) structure. The high pressure phase transitions of CIGS were proposed to be the same as the order in the CuInSe(2) phase transitions which are I42d → Fm3m → Cmcm structures. By using the mixture atoms method, the Na concentration in CIGS was studied at 0.1, 1.0 and 6.25%. The positive mixing enthalpy of Na at In/Ga sites (Na(InGa)) is higher than that of Na at Cu sites (Na(Cu)). It confirmed previous studies that Na preferably substitutes on the Cu sites more than the (In, Ga) sites. From the energy-volume curves, we found that the effect of the Na substitutes is to reduce the hardness of CIGS under high pressure. The most significant effects occur at 6.25% Na. We also found that the electronic density of states of CIGS near the valence band maximum is increased noticeably in the chalcopyrite phase. The band gap is close in the cubic and orthorhombic phases. Also, the Na(Cu)-Se bond length in the chalcopyrite phase is significantly reduced at 6.25% Na, compared with the pure Cu-Se bond length. Consequently, the energy band gap in this phase is wider than in pure CIGS, and the gap increased at the rate of 31 meV GPa(-1) under pressure. The Na has a small effect on the transition pressure. The path of transformation from the cubic to orthorhombic phase was derived. The Cu-Se plane in the cubic phase displaced relatively parallel to the (In, Ga)-Se plane by 18% in order to transform to the Cmcm phase. The enthalpy barrier is 0.020 eV/atom, which is equivalent to a thermal energy of 248 K. We predicted that Fm3m and Cmcm can coexist in some pressure range.

  13. Absorption of surface acoustic waves by topological insulator thin films

    SciTech Connect

    Li, L. L.; Xu, W.

    2014-08-11

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

  14. Absorption of surface acoustic waves by topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Li, L. L.; Xu, W.

    2014-08-01

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

  15. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy.

    PubMed

    Klein, Andreas

    2015-04-10

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  16. [Study on the modified surface layers of the CIGS thin films by Raman spectra].

    PubMed

    Liu, Wei; Sun, Yun; Li, Feng-Yan; He, Qing; Li, Chang-Jian; Tian, Jian-Guo

    2007-04-01

    In the present paper, the properties of Cu(In(1-x) Ga(x)) Se2 (CIGS) thin film absorber materials for the solar cells obtained by selenization of the precursors with In-rich or CuGa-rich surface layers were studied by XRD, SEM and Raman spectra. The photovoltaic devices based on the absorbers were measured and analyzed by illuminated J-V curve subsequently. The performance of the device constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layer was improved greatly compared to that with In-rich surface layer. Through Raman spectra measurement, it was found that the Raman peak of the A1 mode was shifted for the CuGa-rich one, which is verified that the band gap of the surface layers was elevated. Moreover the value of increased Ga contents within the surface region of films were calculated by the relation between the Raman shifts and the Ga contents. As a result, the devices based on the thin films with the elevated surface energy band by selenizing the precursors with the CuGa-rich surface layer improved further the V(oc) and FF by about 74 mV and 8% respectively compared to that of corresponding to the one with In-rich surface layers, so that the conversion efficiency of the photovoltaic devices based on these thin films with CuGa-rich surface layer was improved by up to 9.4%. Meanwhile Raman scattering spectroscopy has proven to be a very powerful and useful technique for the surface analysis of such thin film solar cell semiconducuor materials.

  17. Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Kulkarni, Shashank R.; Chavan, Sanjay S.; Ghongadi, Shantinath R.

    2005-01-01

    Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

  18. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

    NASA Astrophysics Data System (ADS)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-01

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for "realistic" surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is - apart from a slight change in surface composition - identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  19. Role of the intermediate phases InSe and Cu9(In1- x Ga x )4 in fabricating Cu(In1- x Ga x )Se2 films by selenization of Cu-In-Ga precursors

    NASA Astrophysics Data System (ADS)

    Huang, Yongliang; Han, Anjun; Wang, Xian; Liu, Xiaohui; Liu, Zhengxin; Meng, Fanying

    2017-01-01

    A cosputtered Cu-In-Ga metal precursor was first selenized in H2Se atmosphere, and then subsequently annealed in N2 atmosphere. The microstructural evolution of Cu(In1- x Ga x )Se2 (CIGS) films during thermal treatment was investigated, and it was found that the morphology and Ga distribution of the CIGS absorber were governed by selenization and annealing. The intermediate phases InSe and Cu9(In1- x Ga x )4 formed in the selenization step are beneficial to Ga diffusion and grain growth during annealing. Therefore, the open-circuit voltage and fill factor of a CIGS solar cell were enhanced by the combination of a sufficient amount of intermediate phases and 580 °C annealing, attributed mainly to the higher Ga content near the front surface and better crystallinity of the CIGS absorber. The conversion efficiency of CIGS solar cell was increased 1.24-fold with optimized selenization and annealing conditions.

  20. Evidence for a modified-stannite crystal structure in wide band gap Cu-poor CuIn1-xGaxSe2: Impact on the optical properties

    NASA Astrophysics Data System (ADS)

    Souilah, M.; Lafond, A.; Barreau, N.; Guillot-Deudon, C.; Kessler, J.

    2008-06-01

    The crystal structure of high Ga-content CuIn1-xGaxSe2 (CIGSe) compounds has been further investigated with the help of single crystal x-ray diffraction technique. It is known that CIGSe compounds adopt the chalcopyrite crystal structure. In the case of Cu-poor, Ga-rich CIGSe, the present study shows that an alternative structure should be considered. This structure is derived from that of stannite in which there is a Ga /In segregation on two different atomic planes. The diffuse reflectance measurements of the Cu-poor compound reveal a slightly different band gap and a smoother transition compared with those of the stoichiometric compound.

  1. Spray-Pyrolyzed Three-Dimensional CuInS2 Solar Cells on Nanocrystalline-Titania Electrodes with Chemical-Bath-Deposited Inx(OH)ySz Buffer Layers

    NASA Astrophysics Data System (ADS)

    Nguyen, Duy-Cuong; Mikami, Yuki; Tsujimoto, Kazuki; Ryo, Toshihiro; Ito, Seigo

    2012-10-01

    Three-dimensional (3D) compound solar cells with the structure of have been fabricated by spray pyrolysis deposition of CuInS2 and chemical-bath deposition of Inx(OH)ySz for the light absorber and buffer layer, respectively. The effect of deposition and annealing conditions of Inx(OH)ySz on the photovoltaic properties of 3D CuInS2 solar cells was investigated. Inx(OH)ySz annealed in air ambient showed a better cell performance than those annealed in nitrogen ambient and without annealing. The improvement of the performance of cells with Inx(OH)ySz buffer layers annealed in air ambient is due to the increase in oxide concentration in the buffer layers [confirmed by X-ray photoelectron spectroscopy (XPS) measurement]. Among cells with Inx(OH)ySz buffer layers deposited for 1, 1.5, 1.75, and 2 h, that with Inx(OH)ySz deposited for 1.75 h showed the best cell performance. The best cell performance was observed for Inx(OH)ySz deposited for 1.75 h with annealing at 300 °C for 30 min in air ambient, and cell parameters were 22 mA cm-2 short-circuit photocurrent density, 0.41 V open-circuit voltage, 0.35 fill factor, and 3.2% conversion efficiency.

  2. Thin Sections

    PubMed Central

    Peachey, Lee D.

    1958-01-01

    Knowledge of the thickness of sections is important for proper interpretation of electron micrographs. Therefore, the thicknesses of sections of n-butyl methacrylate polymer were determined by ellipsometry, and correlated with the color shown in reflected light. The results are: gray, thinner than 60 mµ; silver, 60 to 90 mµ; gold, 90 to 150 mµ; purple, 150 to 190 mµ; blue, 190 to 240 mµ; green, 240 to 280 mµ; and yellow, 280 to 320 mµ. These results agree well with optical theory and with previous published data for thin films. Sections, after cutting, are 30 to 40 per cent shorter than the face of the block from which they were cut. Only a small improvement results from allowing the sections to remain in the collecting trough at room temperature. Heating above room temperature, however, reduces this shortening, with a corresponding improvement in dimensions and spatial relationships in the sections. When the thickness of the section is considered in interpreting electron micrographs instead of considering the section to be two-dimensional, a more accurate interpretation is possible. The consideration of electron micrographs as arising from projections of many profiles from throughout the whole thickness of the section explains the apparent lack of continuity often observed in serial sections. It is believed that serial sections are actually continuous, but that the change in size of structure through the thickness of one section and the consideration of only the largest profile shown in the micrograph can account for the lack of continuity previously observed. PMID:13549493

  3. CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005

    SciTech Connect

    Dhere, N. G.

    2006-02-01

    This report describes the I-III-VI2 compounds that are developing into a promising material to meet the energy requirement of the world. CuInSe2 (CIS) and its alloy with Ga and S have shown long-term stability and highest conversion efficiency of 19.5%. Among the various ways of preparing CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells, co-evaporation and sputtering techniques are the most promising. Sputtering is an established process for very high-throughput manufacturing. ARCO Solar, now Shell Solar, pioneered the work in CIS using the sputtering technique. The two-stage process developed by ARCO Solar involved sputtering of a copper and indium layer on molybdenum-coated glass as the first step. In the second step, the copper-indium layers were exposed to a selenium-bearing gas such as hydrogen selenide (H2Se) mixed with argon. The hydrogen selenide breaks down and leaves selenium, which reacts and mixes with the copper and indium in such a way to produce very high-quality CIS absorber layer. Sputtering technology has the added advantage of being easily scaled up and promotes roll-to-roll production on flexible substrates. Preliminary experiments were carried out. ZnO/ZnO:Al deposition by RF magnetron sputtering and CdS deposition by chemical-bath deposition are being carried out on a routine basis.

  4. Microstructure of Thin Films

    DTIC Science & Technology

    1990-02-07

    optical properties ." (Final text in preparation). John Lehan, "Microstructural analysis of thin films by Rutherford Backscattering...correlation of optical properties and micro- Ion assisted deposition (IAD) is known to produce structure of IAD thin films with ion beam parameters thin films ...1.5-eV interband absorption. P (eV) R (%) P (, -V) R %) Optical properties of metal thin films in the spectral 0 98.3 0 88.8 range of

  5. [Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

    PubMed

    Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

    2009-03-01

    Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low

  6. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  7. Research on polycrystalline thin-film CuGaInSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Stanbery, B. J.; Chen, W. S.; Devaney, W. E.; Stewart, J. W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe2 (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13 percent efficient, 1-sq cm total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO / Cd(0.82)Zn(0.18)S / CuIn(0.80)Ga(0.20)Se2 cell that was verified at NREL under standard testing conditions at 13.1 percent efficiency with V(sub oc) = 0.581 V, J(sub sc) = 34.8 mA/sq cm, FF = 0.728, and a cell area of 0.979 sq cm.

  8. Sustainable, Rapid Synthesis of Bright-Luminescent CuInS2-ZnS Alloyed Nanocrystals: Multistage Nano-xenotoxicity Assessment and Intravital Fluorescence Bioimaging in Zebrafish-Embryos

    NASA Astrophysics Data System (ADS)

    Chetty, S. Shashank; Praneetha, S.; Basu, Sandeep; Sachidanandan, Chetana; Murugan, A. Vadivel

    2016-05-01

    Near-infrared (NIR) luminescent CuInS2-ZnS alloyed nanocrystals (CIZS-NCs) for highly fluorescence bioimaging have received considerable interest in recent years. Owing, they became a desirable alternative to heavy-metal based-NCs and organic dyes with unique optical properties and low-toxicity for bioimaging and optoelectronic applications. In the present study, bright and robust CIZS-NCs have been synthesized within 5 min, as-high-as 230 °C without requiring any inert-gas atmosphere via microwave-solvothermal (MW-ST) method. Subsequently, the in vitro and in vivo nano-xenotoxicity and cellular uptake of the MUA-functionalized CIZS-NCs were investigated in L929, Vero, MCF7 cell lines and zebrafish-embryos. We observed minimal toxicity and acute teratogenic consequences upto 62.5 μg/ml of the CIZS-NCs in zebrafish-embryos. We also observed spontaneous uptake of the MUA-functionalized CIZS-NCs by 3 dpf older zebrafish-embryos that are evident through bright red fluorescence-emission at a low concentration of 7.8 μg/mL. Hence, we propose that the rapid, low-cost, large-scale “sustainable” MW-ST synthesis of CIZS-NCs, is an ideal bio-nanoprobe with good temporal and spatial resolution for rapid labeling, long-term in vivo tracking and intravital-fluorescence-bioimaging (IVBI).

  9. Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

    NASA Astrophysics Data System (ADS)

    Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

    2013-10-01

    In the present manuscript we report about the preparation of CdS/CuInSe2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au9+ SHI of 5×1011 and 5×1012 ions/cm2 fluencies and later on characterized for structural, compositional, morphological, optical and I-V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In2Se3, Cu3Se2 and CuIn2Se3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I-V characteristics under illumination to 100 mW/cm2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation.

  10. Thin film interference of colloidal thin films.

    PubMed

    Cong, Hailin; Cao, Weixiao

    2004-09-14

    A stairlike colloidal crystal thin film composed of poly(styrene-methyl methacrylate-acrylic acid) (P(St-MMA-AA)) monodispersed colloids was fabricated on an inclined silicon substrate. Different bright colors were observed on the various parts of the film with different layers as white light irradiated perpendicularly on it. The relationship between the colors and layers of the film was investigated and discussed according to the principle of thin film interference. On the basis of the phenomenon of thin film interference, a one-layer colloidal film having uniform color was researched and it would display diverse colors before and after swollen by styrene (St). A circular stairlike colloidal film was achieved to mimic the colors of the peacock tail feather.

  11. Mechanics of Thin Films

    DTIC Science & Technology

    1992-02-06

    S. Hwang, Thermal conductivity of thin films: measurement and microstructural effects, in Thin- film heat transfer, properties and processing, ed...thermal, electrical, optical and magnetic properties . As typical examples we mention microelectronics, optical coatings and multilayers for use in optical...interplay between mechanical properties (elastic moduli), thermal properties (thermal conductivity, thermal expansion coefficient), and optical

  12. Optical thin film devices

    NASA Astrophysics Data System (ADS)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  13. Sustainable, Rapid Synthesis of Bright-Luminescent CuInS2-ZnS Alloyed Nanocrystals: Multistage Nano-xenotoxicity Assessment and Intravital Fluorescence Bioimaging in Zebrafish-Embryos

    PubMed Central

    Chetty, S. Shashank; Praneetha, S.; Basu, Sandeep; Sachidanandan, Chetana; Murugan, A. Vadivel

    2016-01-01

    Near-infrared (NIR) luminescent CuInS2-ZnS alloyed nanocrystals (CIZS-NCs) for highly fluorescence bioimaging have received considerable interest in recent years. Owing, they became a desirable alternative to heavy-metal based-NCs and organic dyes with unique optical properties and low-toxicity for bioimaging and optoelectronic applications. In the present study, bright and robust CIZS-NCs have been synthesized within 5 min, as-high-as 230 °C without requiring any inert-gas atmosphere via microwave-solvothermal (MW-ST) method. Subsequently, the in vitro and in vivo nano-xenotoxicity and cellular uptake of the MUA-functionalized CIZS-NCs were investigated in L929, Vero, MCF7 cell lines and zebrafish-embryos. We observed minimal toxicity and acute teratogenic consequences upto 62.5 μg/ml of the CIZS-NCs in zebrafish-embryos. We also observed spontaneous uptake of the MUA-functionalized CIZS-NCs by 3 dpf older zebrafish-embryos that are evident through bright red fluorescence-emission at a low concentration of 7.8 μg/mL. Hence, we propose that the rapid, low-cost, large-scale “sustainable” MW-ST synthesis of CIZS-NCs, is an ideal bio-nanoprobe with good temporal and spatial resolution for rapid labeling, long-term in vivo tracking and intravital-fluorescence-bioimaging (IVBI). PMID:27188464

  14. Electrochemical thinning of silicon

    DOEpatents

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  15. Electrochemical thinning of silicon

    DOEpatents

    Medernach, John W.

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  16. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  17. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  18. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  19. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  20. Super Thin Ceramic Coatings

    NASA Video Gallery

    New technology being developed at NASA's Glenn Research Center creates super thin ceramic coatings on engine components. The Plasma Spray – Physical Vapor Deposition (PS-PVD) rig uses a powerful ...

  1. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  2. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  3. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  4. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  5. The effect of surface roughness on the determination of optical constants of CuInSe2 and CuGaSe2 thin films

    NASA Astrophysics Data System (ADS)

    Yin, G.; Merschjann, C.; Schmid, M.

    2013-06-01

    To investigate the effect of surface roughness on the calculation of optical constants, e.g., the complex refractive index n +ik or (n ,k) of CuIn1-xGaxSe2 (CIGSe) thin films, we took CuInSe2 (CISe) and CuGaSe2 (CGSe) as examples and applied the "Modified Transfer-Matrix (MTM)" method to calculate optical constants with considering the effect of scattering due to surface roughness. Compared to the Transfer-Matrix (TM) method without considering surface roughness, it was revealed that the MTM method could improve the accuracy of calculation. The calculated refractive index values from the MTM method increase by 6.89% for CISe and 2.59% for CGSe in contrast to those from the TM method. In addition, bromine solution was confirmed via Scanning Electron Microscopy and Atomic Force Microscopy to be able to reduce the surface roughness. Calculated results from smoothened samples showed that the accuracy of calculated optical constants was further improved. Finally, optical constants calculated by the MTM method were compared to those from smoothened samples, validating that the MTM method could eliminate the influence of surface roughness on the calculation of optical constants more effectively for CGSe with low surface roughness than for CISe with high surface roughness.

  6. Epitaxial thinning process

    NASA Technical Reports Server (NTRS)

    Siegel, C. M. (Inventor)

    1984-01-01

    A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

  7. Lithospheric and crustal thinning

    NASA Technical Reports Server (NTRS)

    Moretti, I.

    1985-01-01

    In rift zones, both the crust and the lithosphere get thinner. The amplitude and the mechanism of these two thinning situations are different. The lithospheric thinning is a thermal phenomenon produced by an asthenospherical uprising under the rift zone. In some regions its amplitude can exceed 200%. This is observed under the Baikal rift where the crust is directly underlaid by the mantellic asthenosphere. The presence of hot material under rift zones induces a large negative gravity anomaly. A low seismic velocity zone linked to this thermal anomaly is also observed. During the rifting, the magmatic chambers get progressively closer from the ground surface. Simultaneously, the Moho reflector is found at shallow depth under rift zones. This crustal thinning does not exceed 50%. Tectonic stresses and vertical movements result from the two competing effects of the lithospheric and crustal thinning. On the one hand, the deep thermal anomaly induces a large doming and is associated with extensive deviatoric stresses. On the other hand, the crustal thinning involves the formation of a central valley. This subsidence is increased by the sediment loading. The purpose here is to quantify these two phenomena in order to explain the morphological and thermal evolution of rift zones.

  8. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  9. Biomimetic thin film deposition

    NASA Astrophysics Data System (ADS)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  10. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  11. Shear Thinning in Xenon

    NASA Technical Reports Server (NTRS)

    Bergm Robert F.; Moldover, Michael R.; Yao, Minwu; Zimmerli, Gregory A.

    2009-01-01

    We measured shear thinning, a viscosity decrease ordinarily associated with complex liquids such as molten plastics or ketchup, near the critical point of xenon. The data span a wide range of dimensionless shear rate: the product of the shear rate and the relaxation time of critical fluctuations was greater than 0.001 and was less than 700. As predicted by theory, shear thinning occurred when this product was greater than 1. The measurements were conducted aboard the Space Shuttle Columbia to avoid the density stratification caused by Earth's gravity.

  12. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  13. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  14. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  15. Protein thin film machines.

    PubMed

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  16. Treading on Thin Water.

    ERIC Educational Resources Information Center

    Haley, Richard D.

    1985-01-01

    Provides a simple introduction to animals whose habitat is the thin surface film of water. Describes adaptive mechanisms of water striders, whirlygigs and riffle bugs and suggests ways to observe them in the wild or as aquarium animals. Includes basic demonstrations of the nature of surface tension. (JHZ)

  17. Thin Wall Iron Castings

    SciTech Connect

    J.F. Cuttino; D.M. Stefanescu; T.S. Piwonka

    2001-10-31

    Results of an investigation made to develop methods of making iron castings having wall thicknesses as small as 2.5 mm in green sand molds are presented. It was found that thin wall ductile and compacted graphite iron castings can be made and have properties consistent with heavier castings. Green sand molding variables that affect casting dimensions were also identified.

  18. Thin Lens Ray Tracing.

    ERIC Educational Resources Information Center

    Gatland, Ian R.

    2002-01-01

    Proposes a ray tracing approach to thin lens analysis based on a vector form of Snell's law for paraxial rays as an alternative to the usual approach in introductory physics courses. The ray tracing approach accommodates skew rays and thus provides a complete analysis. (Author/KHR)

  19. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  20. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  1. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  2. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  3. VACUUM DEPOSITION OF THIN FILMS,

    DTIC Science & Technology

    The book deals with methods of obtaining and processing thin films , methods of measuring the deposition rate and thickness of thin-film layers, and...the main fields of application of thin films . Vacuum requirements and the requirements for the composition of the residual medium in thermal...evaporation and cathode sputtering are given, and modern methods of producing and measuring vacuums and the equipment used in obtaining thin films are described. (Author)

  4. Copper gallium diselenide thin film absorber growth for solar cell device fabrication

    NASA Astrophysics Data System (ADS)

    Kaczynski, Ryan

    2007-12-01

    A custom-built migration-enhanced epitaxy reactor originally optimized for CuInSe2 (CIS) deposition was modified to grow gallium-containing compound semiconductor thin films, such as CuGaSe2 (CGS) and CuIn1-xGaxSe2 (CIGS). The addition of gallium allows for the manufacturing of solar cell absorber layers with wider band gaps. Three distinct growth recipes under several growth temperatures and a wide range of metal-composition ratios are used to deposit polycrystalline CGS thin films. The surface morphology of gallium-rich films is typically very uniform, with long needle-like grains when grown by the first recipe, a constant copper-rate process. In contrast, copper-rich films grown by this same recipe or by a modified three-stage process have island structures with very large grains embedded in a matrix region that possesses small grains. The surface morphology becomes more uniform and the grains in the matrix region become larger when a higher growth temperature is used. The third recipe, an emulated three-stage process, does not produce films with an island-matrix structure, and the grains are uniformly large. The highest conversion efficiency achieved for solar cells based on CGS is 5.3%, delivered by a copper-rich absorber deposited at the highest sustainable growth temperature of 491°C. This device has a large fill factor of 66%, but the open-circuit voltage of 0.48 V is lower than what is expected from a wide band-gap absorber. A set of CIGS solar cells was completely fabricated and characterized in-house. This led to the most efficient device produced from an absorber grown in our reactor, in the form of a 9% CIS solar cell featuring a one-micron film deposited at 491°C. Finally, a dynamic reactor model was created to describe the deposition environment in our epitaxial reactor. All relevant physical features are incorporated, including the cyclic motion of a rotating platen and the spatial distribution of the flux produced by three metal effusion sources

  5. CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Ghongadi, Shantinath R.; Pandit, Mandar B.; Jahagirdar, Anant H.; Scheiman, David

    2002-01-01

    CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal

  6. Investigation of bulk hybrid heterojunction solar cells based on Cu(In,Ga)Se2 nanocrystals

    PubMed Central

    2013-01-01

    This work presents the systematic studies of bulk hybrid heterojunction solar cells based on Cu(In, Ga)Se2 (CIGS) nanocrystals (NCs) embedded in poly(3-hexylthiophene) matrix. The CIGS NCs of approximately 17 nm in diameter were homogeneously blended with P3HT layer to form an active layer of a photovoltaic device. The blend ratios of CIGS NCs to P3HT, solvent effects on thin film morphologies, interface between P3HT/CIGS NCs and post-production annealing of devices were investigated, and the best performance of photovoltaic devices was measured under AM 1.5 simulated solar illumination (100 mW/cm2). PMID:23870036

  7. Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

    SciTech Connect

    Jiang, Chun-Sheng; To, Bobby; Glynn, Stephen; Mahabaduge, Hasitha; Barnes, Teresa; Al-Jassim, Mowafak M.

    2016-11-21

    We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ~0.5 degrees. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

  8. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  9. Shear-thinning Fluid

    NASA Technical Reports Server (NTRS)

    2001-01-01

    Whipped cream and the filling for pumpkin pie are two familiar materials that exhibit the shear-thinning effect seen in a range of industrial applications. It is thick enough to stand on its own atop a piece of pie, yet flows readily when pushed through a tube. This demonstrates the shear-thinning effect that was studied with the Critical Viscosity of Xenon Experiment (CVX-2) on the STS-107 Research 1 mission in 2002. CVX observed the behavior of xenon, a heavy inert gas used in flash lamps and ion rocket engines, at its critical point. The principal investigator was Dr. Robert Berg of the National Institutes of Standards and Technology in Gaithersburg, MD.

  10. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  11. Thin, Lightweight Solar Cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  12. Thin film composite electrolyte

    DOEpatents

    Schucker, Robert C.

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  13. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  14. Method for thinning specimen

    SciTech Connect

    Follstaedt, David M.; Moran, Michael P.

    2005-03-15

    A method for thinning (such as in grinding and polishing) a material surface using an instrument means for moving an article with a discontinuous surface with an abrasive material dispersed between the material surface and the discontinuous surface where the discontinuous surface of the moving article provides an efficient means for maintaining contact of the abrasive with the material surface. When used to dimple specimens for microscopy analysis, a wheel with a surface that has been modified to produce a uniform or random discontinuous surface significantly improves the speed of the dimpling process without loss of quality of finish.

  15. Ureilite Thin Section Preparation

    NASA Technical Reports Server (NTRS)

    Harrington, R.; Righter, K.

    2014-01-01

    Preparing thin and thick sections of ureilite type meteorites is a challenge that can confound even the most experienced section preparer. A common characteristic of these samples is the presence of carbon phases, particularly nanodiamonds, in the matrix along silicate grain boundaries, fractures, and cleavage plains [1]. The extreme hardness of the nanodiamonds presents a challenge to the section preparer in the form of high surface relief on the section. This hard material also causes considerable wear and tear on equipment and materials that are used for making the sections. These issues will be discussed and potentially helpful measures will be presented.

  16. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  17. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  18. The thin eggshell problem

    USGS Publications Warehouse

    Stickel, L.F.; Rhodes, L.I.; Gillett, J.W.

    1970-01-01

    It has long been known that DDT and related chemicals can impair the reproduction of birds. In early years of organochlorine pesticide use, widespread mortality occurred immediately following heavy applications of these chemicals, and survivors contained substantial amounts of toxicant in their tissues. Repopulation from untreated areas tended to conceal the extent of the effects. DDT and dieldrin have become ubiquitous and the original source of the chemicals producing bird deaths often cannot be traced. The extent of sublethal effects cannot be fully appraised, although laboratory experiments continually reveal new and potentially deleterious physiological reactions. Thin eggshells have become prevalent among certain declining species of predatory birds. Shell thinning and associated reproductive effects have been produced experimentally in mallard ducks and in sparrow hawks. Coturnix quail fed dietary dosages of p,p'-DDT produced fewer eggs than did untreated birds and the eggs had thinner shells. Hatchability was not significantly altered. Comparisons between these results and those obtained in other studies indicate significant species differences.

  19. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  20. Dewetting of Thin Polymer Films

    NASA Astrophysics Data System (ADS)

    Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

    2001-03-01

    DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

  1. Methods of Producing Thin Films,

    DTIC Science & Technology

    The report describes various methods of producing thin films , especially for microelectronics. In addition to the classical methods of forming thin ... films by vacuum vapor deposition, it also describes processes of diode sputtering and modern methods of cathode sputtering by means of a third

  2. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  3. Magnetochromatic thin-film microplates.

    PubMed

    He, Le; Janner, Michael; Lu, Qipeng; Wang, Mingsheng; Ma, Hua; Yin, Yadong

    2015-01-07

    A new type of magnetochromatic material is developed based on thin-film interference of microplates self-assembled from super-paramagnetic nanocrystals. Dynamic optical tuning can be achieved through orientational manipulation of free-standing super-paramagnetic thin-film microplates using external magnetic fields.

  4. Thin Film Inorganic Electrochemical Systems.

    DTIC Science & Technology

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  5. Multilayer Thin-Film Microcapacitors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anil; Karmon, Dan

    1995-01-01

    Miniature capacitors containing multiple alternating thin-film dielectric and metal layers proposed, especially for use in integrated and hybrid electronic circuits. Because capacitance inversely proportional to thickness of dielectric layers, use of thin, high-quality dielectric layers affords capacitance and energy-storage densities much greater than now available. These devices much smaller and more reliable than state-of-art capacitors.

  6. Thin EFG octagons

    NASA Astrophysics Data System (ADS)

    Kalejs, J. P.

    1994-03-01

    This report describes work to advance the manufacturing line capabilities in crystal growth and laser cutting of Mobil Solar's unique edge-defined film-fed growth (EFG) octagon technology and to reduce the manufacturing costs of 10 cm x 10 cm polycrystalline silicon EFG wafers. The report summarizes the significant technical improvements in EFG technology achieved in the first 6 months of the PVMaT Phase 2 and the success in meeting program milestones. Technical results are reported for each of the three main pregrain areas: Task 5 -- Thin octagon growth (crystal growth) to reduce the thickness of the octagon to 200 microns; Task 6 -- Laser cutting-to improve the laser cutting process so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and Task 7 -- Process control and product specification to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.

  7. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  8. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  9. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  10. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  11. Thin wire pointing method

    NASA Technical Reports Server (NTRS)

    Green, G.; Mattauch, R. J. (Inventor)

    1983-01-01

    A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping an end of a phosphor bronze wire into a dilute solution of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire and another electrode in the solutions is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.

  12. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  13. Holographic thin film analyzer

    NASA Technical Reports Server (NTRS)

    Williams, J. R.; Norden, B. N. (Inventor)

    1973-01-01

    A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.

  14. Thin θ -film optics

    NASA Astrophysics Data System (ADS)

    Huerta, Luis

    2016-12-01

    A Chern-Simons theory in 3D is accomplished by the so-called θ term in the action (θ /2 )∫F ∧F , which contributes only to observable effects on the boundaries of such a system. When electromagnetic radiation interacts with the system, the wave is reflected and its polarization is rotated at the interface, even when both the θ system and the environment are pure vacuum. These topics have been studied extensively. Here, we investigate the optical properties of a thin θ film, where multiple internal reflections could interfere coherently. The cases of pure vacuum and a material with magnetoelectric properties are analyzed. It is found that the film reflectance is enhanced compared to ordinary non-θ systems and the interplay between magnetoelectric properties and the θ parameter yield film opacity and polarization properties which could be interesting in the case of topological insulators, among other topological systems.

  15. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  16. Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; McNatt, Jeremiah S.; Bailey, Sheila G.; Dickman, John E.; Raffaelle, Ryne P.; Landi, Brian J.; Anctil, Annick; DiLeo, Roberta; Jin, Michael H.-C.; Lee, Chung-Young; Friske, Theresa J.; Sun, Sam-S.; Zhang, Cheng; Choi, S.; Ledbetter, Abram; Seo, Kang; Bonner, Carl E.; Banger, Kulbinder K.; Castro, Stephanie L.; Rauh, David

    2007-01-01

    The development of hybrid inorganic/organic thin-film solar cells on flexible, lightweight, space-qualified, durable substrates provides an attractive solution for fabricating solar arrays with high mass specific power (W/kg). Next generation thin-film technologies may well involve a revolutionary change in materials to organic-based devices. The high-volume, low-cost fabrication potential of organic cells will allow for square miles of solar cell production at one-tenth the cost of conventional inorganic materials. Plastic solar cells take a minimum of storage space and can be inflated or unrolled for deployment. We will explore a cross-section of in-house and sponsored research efforts that aim to provide new hybrid technologies that include both inorganic and polymer materials as active and substrate materials. Research at University of Texas at Arlington focuses on the fabrication and use of poly(isothianaphthene-3,6-diyl) in solar cells. We describe efforts at Norfolk State University to design, synthesize and characterize block copolymers. A collaborative team between EIC Laboratories, Inc. and the University of Florida is investigating multijunction polymer solar cells to more effectively utilize solar radiation. The National Aeronautics and Space Administration (NASA)/Ohio Aerospace Institute (OAI) group has undertaken a thermal analysis of potential metallized substrates as well as production of nanoparticles of CuInS2 and CuInSe2 in good yield at moderate temperatures via decomposition of single-source precursors. Finally, preliminary work at the Rochester Institute of Technology (R.I.T.) to assess the impact on performance of solar cells of temperature and carbon nanotubes is reported. Technologies that must be developed to enable ultra-lightweight solar arrays include: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. For NASA applications, any solar cell or array technology must not only meet

  17. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  18. Learning unit: Thin lenses

    NASA Astrophysics Data System (ADS)

    Nita, L.-S.

    2012-04-01

    Learning unit: Thin lenses "Why objects seen through lenses are sometimes upright and sometimes reversed" Nita Laura Simona National College of Arts and Crafts "Constantin Brancusi", Craiova, Romania 1. GEOMETRIC OPTICS. 13 hours Introduction (models, axioms, principles, conventions) 1. Thin lenses (Types of lenses. Defining elements. Path of light rays through lenses. Image formation. Required physical quantities. Lens formulas). 2. Lens systems (Non-collated lenses. Focalless systems). 3. Human eye (Functioning as an optical system. Sight defects and their corrections). 4. Optical instruments (Characteristics exemplified by a magnifying glass. Paths of light rays through a simplified photo camera. Path of light rays through a classical microscope) (Physics curriculum for the IXth grade/ 2011). This scenario exposes a learning unit based on experimental sequences (defining specific competencies), as a succession of lessons started by noticing a problem whose solution assumes the setup of an experiment under laboratory conditions. Progressive learning of theme objectives are realised with sequential experimental steps. The central cognitive process is the induction or the generalization (development of new knowledge based on observation of examples or counterexamples of the concept to be learnt). Pupil interest in theme objectives is triggered by problem-situations, for example: "In order to better see small objects I need a magnifying glass. But when using a magnifier, small object images are sometimes seen upright and sometimes seen reversed!" Along the way, pupils' reasoning will converge to the idea: "The image of an object through a lens depends on the relative distances among object, lens, and observer". Associated learning model: EXPERIMENT Specific competencies: derived from the experiment model, in agreement with the following learning unit steps I. Evoking - Anticipation: Size of the problem, formulation of hypotheses and planning of experiment. II

  19. Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993

    SciTech Connect

    Delahoy, A.E.; Britt, J.; Faras, F.; Kiss, Z.

    1994-09-01

    This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.

  20. Chiral atomically thin films.

    PubMed

    Kim, Cheol-Joo; Sánchez-Castillo, A; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  1. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  2. Thin film strain transducer

    NASA Astrophysics Data System (ADS)

    Rand, J. L.

    1981-01-01

    Previous attempts to develop an appropriate sensor for measuring the stress or strain of high altitude balloons during flight are reviewed as well as the various conditions that must be met by such a device. The design, development and calibration of a transducer which promises to satisfy the necessary design constraints are described. The thin film strain transducer has a low effective modulus so as not to interfere with the strain that would naturally occur in the balloon. In addition, the transducer has a high sensitivity to longitudinal strain (7.216 mV/V/unit strain) which is constant for all temperature from room temperature to -80 C and all strains from 5 percent compression to 10 percent tensile strain. At the same time, the sensor is relatively insensitive (0.27 percent) to transverse forces. The device has a standard 350 ohm impedance which is compatible with available bridge balance, amplification and telemetry instrumentation now available for balloon flight. Recommendations are included for improved coatings to provide passive thermal control as well as model, tethered and full scale flight testing.

  3. The thin film microwave iris

    NASA Technical Reports Server (NTRS)

    Ramey, R. L.; Landes, H. S.; Manus, E. A.

    1972-01-01

    Development of waveguide iris for microwave coupling applications using thin film techniques is discussed. Production process and installation of iris are described. Iris improves power transmission properties of waveguide window.

  4. Sealing micropores in thin castings

    NASA Technical Reports Server (NTRS)

    Mersereau, G. A.; Nitzschke, G. O.; Ochs, H. L.; Sutch, F. S.

    1981-01-01

    Microscopic pores in thin-walled aluminum castings are sealed by impregnation pretreatment. Technique was developed for investment castings used in hermetically sealed chassic for electronic circuitry. Excessively high leakage rates were previously measured in some chassis.

  5. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  6. Thin, Flexible IMM Solar Array

    NASA Technical Reports Server (NTRS)

    Walmsley, Nicholas

    2015-01-01

    NASA needs solar arrays that are thin, flexible, and highly efficient; package compactly for launch; and deploy into large, structurally stable high-power generators. Inverted metamorphic multijunction (IMM) solar cells can enable these arrays, but integration of this thin crystalline cell technology presents certain challenges. The Thin Hybrid Interconnected Solar Array (THINS) technology allows robust and reliable integration of IMM cells into a flexible blanket comprising standardized modules engineered for easy production. The modules support the IMM cell by using multifunctional materials for structural stability, shielding, coefficient of thermal expansion (CTE) stress relief, and integrated thermal and electrical functions. The design approach includes total encapsulation, which benefits high voltage as well as electrostatic performance.

  7. Rotating thin-shell wormhole

    NASA Astrophysics Data System (ADS)

    Ovgun, A.

    2016-11-01

    We construct a rotating thin-shell wormhole using a Myers-Perry black hole in five dimensions, using the Darmois-Israel junction conditions. The stability of the wormhole is analyzed under perturbations. We find that exotic matter is required at the throat of the wormhole to keep it stable. Our analysis shows that stability of the rotating thin-shell wormhole is possible if suitable parameter values are chosen.

  8. Center for Thin Film Studies

    DTIC Science & Technology

    1991-01-22

    techniques for reducing roughness were developed and tested . Substrate Preparation We deposited Si films by sputtering on a variety of substrates, and...deposition," Mod. Phys. Lett. B 3, 1039 (1989). 41 42 Nd: YAG LASER ABLATION OF BaTiO 3 THIN FILMS *URSULA J. GIBSON, **J.A. RUFFNER,***J.J. MCNALLY...thin films of barium titanate onto a variety of substrates, using picosecond and nanosecond pulsed Nd: YAG lasers. The films were deposited from a hot

  9. Synthesis and Characterization of Chalcopyrite (CuInS2 and CuhInSe2) Colloidal Nanoparticles for Optoelectronic Applications via Low-Temperature Pyrolysis of Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Castro, S. L.; Bailey, S. G.; Raffaelle, R. P.; Banger, K. K.; Fahey, Stephen; Hepp, A. F.

    2003-01-01

    Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.

  10. Thin EFG octagons

    NASA Astrophysics Data System (ADS)

    Kalejs, J. P.

    1994-01-01

    Mobil Solar Energy Corporation currently practices a unique crystal growth technology for producing crystalline silicon sheet, which is then cut with lasers into wafers. The wafers are processed into solar cells and incorporated into modules for photovoltaic applications. The silicon sheet is produced using a method known as Edge-defined Film-fed growth (EFG), in the form of hollow eight-sided polygons (octagons) with 10 cm faces. These are grown to lengths of 5 meters and thickness of 300 microns, with continuous melt replenishment, in compact furnaces designed to operate at a high sheet area production area of 135 sq cm/min. The present Photovoltaic Manufacturing Technology (PVMaT) three-year program seeks to advance the manufacturing line capabilities of the Mobil Solar crystal growth and cutting technologies. If successful, these advancements will provide significant reductions in already low silicon raw material usage, improve process productivity, laser cutting throughput and yield, and so lower both individual wafer cost and the cost of module production. This report summarizes the significant technical improvements in EFG technology achieved in Phase 1 of this program. Technical results are reported for each of the three main program areas: (1) thin octagon growth (crystal growth) -- to reduce the thickness of the octagon to an interim goal of 250 microns during Phase 1, with an ultimate goal of achieving 200 micron thicknesses; (2) laser cutting -- to improve the laser cutting process, so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and (3) process control and product specification -- to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.

  11. Influence of the stacking order on structural features of the Cu-In-Ga-Se precursors for formation of Cu(In,Ga)Se2 thin films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor and diethylselenide gas

    NASA Astrophysics Data System (ADS)

    Dejene, F. B.; Sugiyama, M.; Nakanishi, H.; Alberts, V.; Chichibu, S. F.

    2006-09-01

    A novel partway for the fabrication of copper-indium (gallium) diselenide has been developed. This two-stage process consists of the formation of Cu-In-(Ga)-Se precursors and subsequent selenization to form CuIn(Ga)Se2. In this work, we have investigated and compared the possible interactions in Cu-In-Ga-Se systems, using sequentially stacked precursors premixed with Se, in order to get a better understanding of the Cu(In,Ga)Se2 thin film formation. Comparison of these SEM micrographs clearly revealed that the surface morphologies and hence surface roughness of the resulting Cu(In,Ga)Se2 absorber films were significantly influenced by the structure of the precursor films prior to selenization. XRD analyses revealed the presence of a graded CuIn1-xGaxSe structure, irrespective of the stacking order during the precursor formation step for samples selenized using elemental Se vapor. It was established that distinct from the case of using Se vapor, a single-phase Cu(In,Ga)Se2 films were obtained by diethylselenide (DESe) selenization from Cu-In-Ga metal precursors premixed Se irrespective of the stacking order during the precursor formation step.

  12. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  13. Squirming through shear thinning fluids

    NASA Astrophysics Data System (ADS)

    Datt, Charu; Zhu, Lailai; Elfring, Gwynn J.; Pak, On Shun

    2015-11-01

    Many microorganisms find themselves surrounded by fluids which are non-Newtonian in nature; human spermatozoa in female reproductive tract and motile bacteria in mucosa of animals are common examples. These biological fluids can display shear-thinning rheology whose effects on the locomotion of microorganisms remain largely unexplored. Here we study the self-propulsion of a squirmer in shear-thinning fluids described by the Carreau-Yasuda model. The squirmer undergoes surface distortions and utilizes apparent slip-velocities around its surface to swim through a fluid medium. In this talk, we will discuss how the nonlinear rheological properties of a shear-thinning fluid affect the propulsion of a swimmer compared with swimming in Newtonian fluids.

  14. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  15. Thin Film Solid Lubricant Development

    NASA Technical Reports Server (NTRS)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  16. Shear Thinning of Noncolloidal Suspensions

    NASA Astrophysics Data System (ADS)

    Vázquez-Quesada, Adolfo; Tanner, Roger I.; Ellero, Marco

    2016-09-01

    Shear thinning—a reduction in suspension viscosity with increasing shear rates—is understood to arise in colloidal systems from a decrease in the relative contribution of entropic forces. The shear-thinning phenomenon has also been often reported in experiments with noncolloidal systems at high volume fractions. However its origin is an open theoretical question and the behavior is difficult to reproduce in numerical simulations where shear thickening is typically observed instead. In this letter we propose a non-Newtonian model of interparticle lubrication forces to explain shear thinning in noncolloidal suspensions. We show that hidden shear-thinning effects of the suspending medium, which occur at shear rates orders of magnitude larger than the range investigated experimentally, lead to significant shear thinning of the overall suspension at much smaller shear rates. At high particle volume fractions the local shear rates experienced by the fluid situated in the narrow gaps between particles are much larger than the averaged shear rate of the whole suspension. This allows the suspending medium to probe its high-shear non-Newtonian regime and it means that the matrix fluid rheology must be considered over a wide range of shear rates.

  17. High Performance Thin Layer Chromatography.

    ERIC Educational Resources Information Center

    Costanzo, Samuel J.

    1984-01-01

    Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

  18. New strategies for thinning peaches

    Technology Transfer Automated Retrieval System (TEKTRAN)

    An evaluation of two mechanical thinners was conducted in four commercial peach orchard blocks in 2007. A mechanical blossom thinner designed by a German grower for thinning apple trees that employed nylon cords (strings) to remove blossoms was tested on peach trees trained to either a perpendicula...

  19. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  20. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  1. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  2. On thinning of chains in MCMC

    USGS Publications Warehouse

    Link, William A.; Eaton, Mitchell J.

    2012-01-01

    4. We discuss the background and prevalence of thinning, illustrate its consequences, discuss circumstances when it might be regarded as a reasonable option and recommend against routine thinning of chains unless necessitated by computer memory limitations.

  3. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  4. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  5. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  6. Thin films under chemical stress

    SciTech Connect

    Not Available

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  7. Lithographic Micropatterning of Polythiophene Thin-Films.

    DTIC Science & Technology

    OXYGEN, POLYMERS, PROCESSING, PROPANOLS, REACTIVITIES, REFRACTIVE INDEX, REPRODUCTION(COPYING), SEMICONDUCTORS, SILICATES, SOLVENTS, STRUCTURES, SURFACE PROPERTIES, THICKNESS, THIN FILMS , THIOPHENES.

  8. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... tolerance. C4L Fair Quality Light-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in oil... tolerance. C5L Low Quality Light-brown Thin Leaf Underripe, thin, close leaf structure, rough, lean in oil... tolerance. C4F Fair Quality Medium-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in...

  9. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... tolerance. C4L Fair Quality Light-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in oil... tolerance. C5L Low Quality Light-brown Thin Leaf Underripe, thin, close leaf structure, rough, lean in oil... tolerance. C4F Fair Quality Medium-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in...

  10. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... tolerance. C4L Fair Light-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish... Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish, pale color intensity, narrow... tolerance. C4F Fair Medium-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull...

  11. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... Fair Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak... Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak, dull... Medium-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak,...

  12. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... Fair Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak... Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak, dull... Medium-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak,...

  13. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... tolerance. C4L Fair Light-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish... Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish, pale color intensity, narrow... tolerance. C4F Fair Medium-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull...

  14. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... tolerance. C4L Fair Light-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish... Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish, pale color intensity, narrow... tolerance. C4F Fair Medium-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull...

  15. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... tolerance. C4L Fair Light-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish... Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish, pale color intensity, narrow... tolerance. C4F Fair Medium-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull...

  16. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... Fair Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak... Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak, dull... Medium-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak,...

  17. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... tolerance. C4L Fair Quality Light-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in oil... tolerance. C5L Low Quality Light-brown Thin Leaf Underripe, thin, close leaf structure, rough, lean in oil... tolerance. C4F Fair Quality Medium-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in...

  18. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... tolerance. C4L Fair Quality Light-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in oil... tolerance. C5L Low Quality Light-brown Thin Leaf Underripe, thin, close leaf structure, rough, lean in oil... tolerance. C4F Fair Quality Medium-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in...

  19. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... tolerance. C4L Fair Quality Light-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in oil... tolerance. C5L Low Quality Light-brown Thin Leaf Underripe, thin, close leaf structure, rough, lean in oil... tolerance. C4F Fair Quality Medium-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in...

  20. Thin film fuel cell electrodes.

    NASA Technical Reports Server (NTRS)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  1. Flexible thin film magnetoimpedance sensors

    NASA Astrophysics Data System (ADS)

    Kurlyandskaya, G. V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz.

  2. Fundamentals of thin solar cells

    SciTech Connect

    Yablonovitch, E.

    1995-08-01

    It is now widely recognized that thin solar cells can present certain advantages for performance and cost. This is particularly the case when light trapping in the semiconductor film is incorporated, as compensation for the diminished single path thickness of the solar cell. In a solar cell thinner than a minority carrier diffusion length, the current collection is of course very easy. More importantly the concentration of an equivalent number of carriers in a thinner volume results in a higher Free Energy, or open circuit voltage. This extra Free Energy may be regarded as due to the concentration factor, just as it would be for photons, electrons, or for any chemical species. The final advantage of a thin solar cell is in the diminished material usage, a factor of considerable importance when we consider the material cost of the high quality semiconductors which we hope to employ.

  3. Laminated thin film solar module

    SciTech Connect

    Berman, E.; Eisner, K.P.

    1986-11-25

    This patent describes a solar module comprising: a first untempered glass sheet having a first side forming a light receiving face of a solar module and a second side, a thin film photovoltaic device fabricated on the second side of the first glass sheet, a second tempered glass sheet spaced from the second side of the first sheet and forming the primary structural member of the solar module; and a pottant layer filling substantially all space between the first and second glass sheets and bonding the sheets together. This patent describes a solar module according to claim 1 further including a second thin film photovoltaic device fabricated on a surface of the second tempered glass sheet.

  4. Thin film concentrator panel development

    NASA Technical Reports Server (NTRS)

    Zimmerman, D. K.

    1982-01-01

    The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

  5. Thin Film Research. Volume 2

    DTIC Science & Technology

    2014-09-26

    laboratory for several years to measure ne optical properties of many different thin films. A helium-neon laser (Spectra Physics model 120, 5 milliwatt...linear interpolation between known points. Ne estimate an accuracy o 2 to 4 m over the range we have tested with available spectral line sources. 3...exam,. nes " ne e+f- ect ,- water adsorption on a +ilter. 4) The larger data base available to the computer permits better characterization o+ a +ilm’s

  6. Scattering from Thin Dielectric Disks

    NASA Technical Reports Server (NTRS)

    Levine, D. M.; Schneider, A.; Lang, R. H.; Carter, H. G.

    1984-01-01

    A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectric properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T is sufficiently large the disk will always be in one or the other of these regimes (T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

  7. The Thin Oil Film Equation

    NASA Technical Reports Server (NTRS)

    Brown, James L.; Naughton, Jonathan W.

    1999-01-01

    A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

  8. Scattering from thin dielectric disks

    NASA Technical Reports Server (NTRS)

    Le Vine, D. M.; Schneider, A.; Lang, R. H.; Carter, H. G.

    1985-01-01

    A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectic properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T sufficiently large the disk will always be in one or the other of these regimes, T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

  9. Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

    SciTech Connect

    Rajbhandari, Pravakar P.; Bikowski, André; Perkins, John D.; Dhakal, Tara P.; Zakutayev, Andriy

    2017-01-01

    Development of tunable contact materials based on environmentally friendly chemical elements using scalable deposition approaches is necessary for existing and emerging solar energy conversion technologies. In this paper, the properties of ZnO alloyed with magnesium (Mg), and doped with gallium (Ga) are studied using combinatorial thin film experiments. As a result of these studies, the optical band gap of the sputtered Zn1-xMgxO thin films was determined to vary from 3.3 to 3.6 eV for a compositional spread of Mg content in the 0.04 < x < 0.17 range. Depending on whether or not Ga dopants were added, the electron concentrations were on the order of 1017 cm-3 or 1020 cm-3, respectively. Based on these results and on the Kelvin Probe work function measurements, a band diagram was derived using basic semiconductor physics equations. The quantitative determination of how the energy levels of Ga-doped (Zn, Mg)O thin films change as a function of Mg composition presented here, will facilitate their use as optimized contact layers for both Cu2ZnSnS4 (CZTS), Cu(In, Ga)Se2 (CIGS) and other solar cell absorbers.

  10. Thinning increases climatic resilience of red pine

    USGS Publications Warehouse

    Magruder, Matthew; Chhin, Sophan; Palik, Brian; Bradford, John B.

    2013-01-01

    Forest management techniques such as intermediate stand-tending practices (e.g., thinning) can promote climatic resiliency in forest stands by moderating tree competition. Residual trees gain increased access to environmental resources (i.e., soil moisture, light), which in turn has the potential to buffer trees from stressful climatic conditions. The influences of climate (temperature and precipitation) and forest management (thinning method and intensity) on the productivity of red pine (Pinus resinosa Ait.) in Michigan were examined to assess whether repeated thinning treatments were able to increase climatic resiliency (i.e., maintaining productivity and reduced sensitivity to climatic stress). The cumulative productivity of each thinning treatment was determined, and it was found that thinning from below to a residual basal area of 14 m2·ha−1 produced the largest average tree size but also the second lowest overall biomass per acre. On the other hand, the uncut control and the thinning from above to a residual basal area of 28 m2·ha−1 produced the smallest average tree size but also the greatest overall biomass per acre. Dendrochronological methods were used to quantify sensitivity of annual radial growth to monthly and seasonal climatic factors for each thinning treatment type. Climatic sensitivity was influenced by thinning method (i.e., thinning from below decreased sensitivity to climatic stress more than thinning from above) and by thinning intensity (i.e., more intense thinning led to a lower climatic sensitivity). Overall, thinning from below to a residual basal area of 21 m2·ha−1 represented a potentially beneficial compromise to maximize tree size, biomass per acre, and reduced sensitivity to climatic stress, and, thus, the highest level of climatic resilience.

  11. Computational modeling of thin ceramic tiles backed by thin substrates

    SciTech Connect

    Walker, J.D.; Anderson, C.E. Jr.; Cox, P.A.

    1995-12-31

    Building on the work of Wilkins, Eulerian hydrocode calculations were performed with ceramic models to examine the behavior of thin ceramic tiles backed by a thin substrate. In order to match ballistic limit data it was necessary to include a pressure dependent flow stress for failed ceramic. Reasonable agreement is found between the modified model and ballistic limit data for a simulated armor piercing round impacting an AD-85 alumina/6061T6 aluminum laminate. Based upon this success, the modified model was used to examine the performance of a SiC/6061T6 aluminum laminate when impacted by an M80 ball round (7.62 mm) at muzzle velocity. The projectile undergoes large deformation, as does the aluminum backing sheet. The computational results indicate, for the M80 projectile impacting at muzzle velocity, that the ballistic limit thickness for the SiC/aluminum laminate should weigh 10% less than the ballistic limit thickness for steel. The talk will include a video tape of calculations.

  12. New thin materials for electronics.

    SciTech Connect

    Schwartzberg, Adam

    2012-02-01

    The work described in this report is from an Early Career LDRD to develop and investigate novel thin film organic conductors with drastically improved electronic properties over the current state of the art. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory a Langmuir-Blodgett trough (LB) was built from scavenged parts and added to a scanning Raman microscope at LBNL. First order thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have helped position Sandia for advances in this area of MOF film creation. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory, a Langmuir-Blodgett trough (LB) was built and added to a scanning Raman microscope at LBNL. Thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy, and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have positioned Sandia for advance in this area of MOF film creation. The interactions with LBNL also led to award of two user projects at the Molecular Foundry at LBNL led by current Sandia staff and the appointment of a current Sandia staff to the Molecular Foundry User Executive Committee.

  13. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  14. Catastrophic Thinning of Dielectric Elastomers

    NASA Astrophysics Data System (ADS)

    Zurlo, G.; Destrade, M.; DeTommasi, D.; Puglisi, G.

    2017-02-01

    We provide an energetic insight into the catastrophic nature of thinning instability in soft electroactive elastomers. This phenomenon is a major obstacle to the development of giant actuators, yet it is neither completely understood nor modeled accurately. In excellent agreement with experiments, we give a simple formula to predict the critical voltages for instability patterns; we model their shape and show that reversible (elastic) equilibrium is impossible beyond their onset. Our derivation is fully analytical, does not require finite element simulations, and can be extended to include prestretch and various material models.

  15. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  16. Advanced Thin Ionization Calorimeter (ATIC)

    NASA Technical Reports Server (NTRS)

    Wefel, John P.

    1998-01-01

    This is the final report for NASA grant NAGW-4577, "Advanced Thin Ionization Calorimeter (ATIC)". This grant covered a joint project between LSU and the University of Maryland for a Concept Study of a new type of fully active calorimeter to be used to measure the energy spectra of very high energy cosmic rays, particularly Hydrogen and Helium, to beyond 1014 eV. This very high energy region has been studied with emulsion chamber techniques, but never investigated with electronic calorimeters. Technology had advanced to the point that a fully active calorimeter based upon Bismuth Germanate (BGO) scintillating crystals appeared feasible for balloon flight (and eventually space) experiments.

  17. Improved Thin, Flexible Heat Pipes

    NASA Technical Reports Server (NTRS)

    Rosenfeld, John H.; Gernert, Nelson J.; Sarraf, David B.; Wollen, Peter J.; Surina, Frank C.; Fale, John E.

    2004-01-01

    Flexible heat pipes of an improved type are fabricated as layers of different materials laminated together into vacuum- tight sheets or tapes. In comparison with prior flexible heat pipes, these flexible heat pipes are less susceptible to leakage. Other advantages of these flexible heat pipes, relative to prior flexible heat pipes, include high reliability and greater ease and lower cost of fabrication. Because these heat pipes are very thin, they are highly flexible. When coated on outside surfaces with adhesives, these flexible heat pipes can be applied, like common adhesive tapes, to the surfaces of heat sinks and objects to be cooled, even if those surfaces are curved.

  18. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics

    DTIC Science & Technology

    2012-06-01

    CdTe and ZnO single-phase thin films , nanocomposite films ...for the CdTe -ZnO thin film system under these conditions. c. Optical Absorption The films produced in the present study consistently exhibited...optical absorbance spectra collected from CdTe -ZnO multilayer nanocomposite thin films . The effect of CdTe layer thickness used per deposition cycle

  19. A numerical study of forced lithospheric thinning

    NASA Technical Reports Server (NTRS)

    Schubert, G.; Anderson, A.; Fishbein, E.

    1985-01-01

    Subsolidus lithospheric thinning by mantle plumes may be involved in the creation of swells, hotspots, and rifts. Among the major questions concerning this process are the timescale on which it occurs and the structure of the plumes. The lithosphere is known to have been substantially thinned in 10 Ma or less. Current studies are focused on the lithospheric thinning by time-dependent plumes hypothesized to have large temperature differences across them.

  20. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  1. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  2. Beryllium thin films for resistor applications

    NASA Technical Reports Server (NTRS)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  3. THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS

    DTIC Science & Technology

    ELECTROCHEMISTRY, * THIN FILMS (STORAGE DEVICES), ALUMINUM, ANODES (ELECTROLYTIC CELL), CAPACITORS, CIRCUITS, MICROMETERS, NIOBIUM, OXIDATION, RESISTORS, TANTALUM, TITANIUM, TUNGSTEN, VACUUM APPARATUS, ZIRCONIUM

  4. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  5. A thin film nitinol heart valve.

    PubMed

    Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

    2005-11-01

    In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

  6. Drying of thin colloidal films

    NASA Astrophysics Data System (ADS)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  7. Plasmonics in atomically thin materials.

    PubMed

    García de Abajo, F Javier; Manjavacas, Alejandro

    2015-01-01

    The observation and electrical manipulation of infrared surface plasmons in graphene have triggered a search for similar photonic capabilities in other atomically thin materials that enable electrical modulation of light at visible and near-infrared frequencies, as well as strong interaction with optical quantum emitters. Here, we present a simple analytical description of the optical response of such kinds of structures, which we exploit to investigate their application to light modulation and quantum optics. Specifically, we show that plasmons in one-atom-thick noble-metal layers can be used both to produce complete tunable optical absorption and to reach the strong-coupling regime in the interaction with neighboring quantum emitters. Our methods are applicable to any plasmon-supporting thin materials, and in particular, we provide parameters that allow us to readily calculate the response of silver, gold, and graphene islands. Besides their interest for nanoscale electro-optics, the present study emphasizes the great potential of these structures for the design of quantum nanophotonics devices.

  8. Stability of thin liquid films

    SciTech Connect

    Bankoff, S.G.; Davis, S.H.

    1994-12-31

    Two topics are discussed in the present progress report. The first is a study of the stability of the interface between two thin immiscible fluid layers in a two-dimensional channel. The flowrates may be specified, or alternatively the total pressure drop and the flowrate of one fluid. The channel may be horizontal or inclined. A long-wave 3D nonlinear evolution equation is derived for the local layer thickness, whose coefficients are high-order polynomials of the viscosity ratio and the initial volume fraction. With a further restriction to small wave amplitude, as well as many slopes, a Kuramoto-Sivashinsky-type (KS) is derived. In countercurrent flow the {open_quotes}group velocity{close_quotes} of the interface can become very small, possibly signaling the onset of flooding. In this case a cubic nonlinearity becomes significant. The properties of this modified KS equation are explored in considerable detail. The classical Yih-Benjamin linear stability theory for long waves on an unforced thin liquid film down a vertical wall has never been experimentally verified, owing to the sensitivity to small random disturbances. However, by careful balancing and by operating under very quiet conditions, the theoretical predictions were verified for the first time. For pointwise measurements, 25-{mu}m resistivity probes were employed, and for global measurements fluorescent imaging.

  9. Thin-Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.

    1993-01-01

    Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.

  10. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  11. Cut Costs with Thin Client Computing.

    ERIC Educational Resources Information Center

    Hartley, Patrick H.

    2001-01-01

    Discusses how school districts can considerably increase the number of administrative computers in their districts without a corresponding increase in costs by using the "Thin Client" component of the Total Cost of Ownership (TCC) model. TCC and Thin Client are described, including its software and hardware components. An example of a…

  12. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  13. Recent advances in thin-layer chromatography

    SciTech Connect

    Dallas, F.A.A.; Read, H.; Ruane, R.J.; Wilson, I.D.

    1988-01-01

    This book is a collection of proceedings from the 1987 Chromatographic Society International Symposium on Thin-Layer Chromatography in Brighton. The book is divided into four sections: Instrumentation, Radio-Thin-Layer Chromatography, Sorbents and Modifiers, and Applications. References date from the 1970s to the mid-1980s. Compounds and subject indexes are included.

  14. Thin disk lasers: history and prospects

    NASA Astrophysics Data System (ADS)

    Speiser, Jochen

    2016-04-01

    During the early 1990s, collaboration between the German Aerospace Center and the University of Stuttgart started to work on the Thin Disk concept. The core idea behind the thin disk design is the use of a thin, disk-shaped active medium that is cooled through one of the flat faces of the disk. This ensures a large surface-to-volume ratio and therefore provides very efficient thermal management. Today, the thin disk concept is used in various commercial lasers - ranging from compact, efficient low power systems to multi-kW lasers, including cw lasers and also pulsed (femtosecond to nanosecond) oscillators and amplifiers. The whole development of the Thin Disk laser was and will be accompanied by numerical modeling and optimization of the thermal and thermo-mechanic behavior of the disk and also the heat sink structure, mostly based on finite element models. For further increasing the energy and efficiency of pulsed Thin Disk lasers, the effects of amplified spontaneous emission (ASE) are a core issue. Actual efforts are oriented towards short pulse and ultra-short pulse amplifiers with (multi-)kW average power or Joule-class Thin Disk amplifiers, but also on new designs for cw thin disk MOPA designs.

  15. Thin CVD Coating Protects Titanium Aluminide Alloys

    NASA Technical Reports Server (NTRS)

    Clark, Ronald; Wallace, Terryl; Cunnington, George; Robinson, John

    1994-01-01

    Feasibility of using very thin CVD coatings to provide both protection against oxidation and surfaces of low catalytic activity for thin metallic heat-shield materials demonstrated. Use of aluminum in compositions increases emittances of coatings and reduces transport of oxygen through coatings to substrates. Coatings light in weight and applied to foil-gauge materials with minimum weight penalties.

  16. Applications of Thin Films in Electronics,

    DTIC Science & Technology

    The authors review the application of thin films produced by vacuum vaporization, cathode sputtering, diffusion, and epitaxial growing in the fields...of passive and active electric components and microminiaturization. Some of the most important characteristics of thin films are summarized. (Author)

  17. Application of Thin Films in Electronics,

    DTIC Science & Technology

    The article reviews the application of thin films (produced by vacuum evaporation, cathode sputtering, diffusion and epitaxial growing) in the field...of passive and active electric components and in microminiaturization. Some of the characteristics of thin films are summarized. (Author)

  18. Thermopower of thin iron films

    NASA Astrophysics Data System (ADS)

    Schepis, Randy; Schröder, Klaus

    1992-02-01

    Thin iron films were prepared by evaporation in a high vacuum system (pressure in the 10 -5 MPa range). The thermopower was measured in situ near room temperature as a function of film thickness. Iron films with rather high resistivity values showed a strong thickness effect of the Seeback coefficient, S, with the difference between S (bulk) and S (film) reaching values of up to (19±3) μV/K for a sample 5 nm thick. The difference between S (bulk) and S (film) decreased with increasing d values. However, a sample with a resistance value of 50 μΩ cm at d = 5 n had an S value which differed by less than 3 μV/K from S (bulk).

  19. Tunneling in thin MOS structures

    NASA Technical Reports Server (NTRS)

    Maserjian, J.

    1974-01-01

    Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

  20. Fundamentals of thin layer chromatography

    SciTech Connect

    Geiss, F.

    1987-01-01

    This comprehensive book on the theory and practice of thin-layer chromatography (TLC) is largely translated from the German original. The text contains a number of appendices, including a list of key equations, a short glossary of terms, and a list of symbols and acronyms. It also contains a list of figures that is perhaps a trifle superfluous. The book lists 299 references and has a four-page subject index. The index may be a little small for a book of nearly 500 pages. This book is a valuable addition to the texts on TLC. It is recommended to those with good mathematics backgrounds and, in particular, to those interested in chromatography theory. It will also be useful to those who employ TLC as an aid in solvent choice for LC.

  1. BDS thin film damage competition

    SciTech Connect

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  2. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  3. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K.; Wei, G.; Yu, P.C.

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  4. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. . Electro-Optics Technology Center); Wei, G. ); Yu, P.C. )

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  5. Magnetostrictive thin films for microwave spintronics.

    PubMed

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  6. Magnetostrictive thin films for microwave spintronics

    PubMed Central

    Parkes, D. E.; Shelford, L. R.; Wadley, P.; Holý, V.; Wang, M.; Hindmarch, A. T.; van der Laan, G.; Campion, R. P.; Edmonds, K. W.; Cavill, S. A.; Rushforth, A. W.

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. PMID:23860685

  7. Mutation-Specific Effects on Thin Filament Length in Thin Filament Myopathy

    PubMed Central

    de Winter, Josine M.; Joureau, Barbara; Lee, Eun-Jeong; Kiss, Balázs; Yuen, Michaela; Gupta, Vandana A.; Pappas, Christopher T.; Gregorio, Carol C.; Stienen, Ger J. M.; Edvardson, Simon; Wallgren-Pettersson, Carina; Lehtokari, Vilma-Lotta; Pelin, Katarina; Malfatti, Edoardo; Romero, Norma B.; van Engelen, Baziel G.; Voermans, Nicol C.; Donkervoort, Sandra; Bönnemann, C. G.; Clarke, Nigel F.; Beggs, Alan H.; Granzier, Henk; Ottenheijm, Coen A. C.

    2016-01-01

    Objective Thin filament myopathies are among the most common nondystrophic congenital muscular disorders, and are caused by mutations in genes encoding proteins that are associated with the skeletal muscle thin filament. Mechanisms underlying muscle weakness are poorly understood, but might involve the length of the thin filament, an important determinant of force generation. Methods We investigated the sarcomere length-dependence of force, a functional assay that provides insights into the contractile strength of muscle fibers as well as the length of the thin filaments, in muscle fibers from 51 patients with thin filament myopathy caused by mutations in NEB, ACTA1, TPM2, TPM3, TNNT1, KBTBD13, KLHL40, and KLHL41. Results Lower force generation was observed in muscle fibers from patients of all genotypes. In a subset of patients who harbor mutations in NEB and ACTA1, the lower force was associated with downward shifted force–sarcomere length relations, indicative of shorter thin filaments. Confocal microscopy confirmed shorter thin filaments in muscle fibers of these patients. A conditional Neb knockout mouse model, which recapitulates thin filament myopathy, revealed a compensatory mechanism; the lower force generation that was associated with shorter thin filaments was compensated for by increasing the number of sarcomeres in series. This allowed muscle fibers to operate at a shorter sarcomere length and maintain optimal thin–thick filament overlap. Interpretation These findings might provide a novel direction for the development of therapeutic strategies for thin filament myopathy patients with shortened thin filament lengths. PMID:27074222

  8. Optimization of CdS Buffer Layer for High Efficiency CIGS Solar Cells.

    PubMed

    Kim, Donguk; Jang, Yong-Jun; Jung, Ho-Sung; Kim, Minha; Baek, Dohyun; Yi, Junsin; Lee, Jaehyeong; Choi, Youngkwan

    2016-05-01

    In present work, effects of the thickness on the structural and optical properties of chemically deposited CdS thin films were investigated. In addition, we fabricated Cu(In, Ga)Se2 solar cells with various thicknesses of CdS buffer layer and optimized the thickness for a high efficiency. When the CdS thin films were thicker, the crystallinity improved but the transmittance decreased. The short-circuit current density (J(sc)) and the fill factor are the major efficiency limiting factors for the CIGS solar cells. As the thickness of the CdS buffer layer, the open-circuit voltage (V(oc)) and the fill factor increased, whereas the J(sc) slightly decreased. The improvement of the fill factor and thus efficiency resulted from larger shunt resistance. For the solar cells without a high resistive intrinsic ZnO layer, the highest efficiency was acquired at the thickness of 89 nm. With further increasing the thickness, the J(sc) decreased significantly, resulting in poor efficiency.

  9. Fillability of Thin-Wall Steel Castings

    SciTech Connect

    Robert C. Voigt; Joseph Bertoletti; Andrew Kaley; Sandi Ricotta; Travis Sunday

    2002-07-30

    The use of steel components is being challenged by lighter nonferrous or cast iron components. The development of techniques for enhancing and ensuring the filability of thin-wall mold cavities is most critical for thinner wall cast steel production. The purpose of this research was to develop thin-wall casting techniques that can be used to reliably produce thin-wall castings from traditional gravity poured sand casting processes. The focus of the research was to enhance the filling behavior to prevent misrunds. Experiments were conducted to investigate the influence of various foundry variables on the filling of thin section steel castings. These variables include casting design, heat transfer, gating design, and metal fluidity. Wall thickness and pouring temperature have the greatest effect on casting fill. As wall thickness increases the volume to surface area of the casting increases, which increases the solidification time, allowing the metal to flow further in thicker sect ions. Pouring time is another significant variable affecting casting fill. Increases or decreases of 20% in the pouring time were found to have a significant effect on the filling of thin-wall production castings. Gating variables, including venting, pouring head height, and mold tilting also significantly affected thin-wall casting fill. Filters offer less turbulent, steadier flow, which is appropriate for thicker castings, but they do not enhance thin-wall casting fill.

  10. Near-field optical thin microcavity theory

    NASA Astrophysics Data System (ADS)

    Wu, Jiu Hui; Hou, Jiejie

    2016-01-01

    The thin microcavity theory for near-field optics is proposed in this study. By applying the power flow theorem and the variable theorem,the bi-harmonic differential governing equation for electromagnetic field of a three-dimensional thin microcavity is derived for the first time. Then by using the Hankel transform, this governing equation is solved exactly and all the electromagnetic components inside and outside the microcavity can be obtained accurately. According to the above theory, the near-field optical diffraction from a subwavelength aperture embedded in a thin conducting film is investigated, and numerical computations are performed to illustrate the edge effect by an enhancement factor of 1.8 and the depolarization phenomenon of the near-field transmission in terms of the distance from the film surface. This thin microcavity theory is verified by the good agreement between our results and those in the previous literatures. The thin microcavity theory presented in the study should be useful in the possible applications of the thin microcavities in near-field optics and thin-film optics.

  11. Instrument platforms for thin-layer chromatography.

    PubMed

    Bernard-Savary, Pierre; Poole, Colin F

    2015-11-20

    High performance column and thin-layer chromatography are both instrumental techniques but differ in that column chromatography requires a fully integrated instrument platform with high pressure capability while for thin-layer chromatography separate devices are used for each unit operation, usually at or close to atmospheric pressure, and afford higher flexibility supporting on-line or off-line operation. The unit operations of thin-layer chromatography are defined as sample application, development and evaluation with derivatization as an optional step. The diversity of equipment for each operation contributes to the flexibility of analysis by thin-layer chromatography and supports manual, semi-automated or full-automation of the separation process. Instrument platforms are more than a convenience as they affect performance, repeatability, sample detectability, and time management. The current trend in thin-layer chromatography is to make the unit operations independent of the user so that analysts can perform other tasks while each step is performed. In addition, in thin-layer chromatography it is general practice to separate several samples simultaneously, and instrument platforms are required to accommodate this feature. In this article, we review contemporary instrumentation employed in thin-layer chromatography for sample application, development, derivatization, photodocumentation, densitometric evaluation, and hyphenation with spectroscopic detectors with an emphasis on the variety and performance of commercially available systems. Some suggestions for best practices and avoidance of common mistakes are included.

  12. Surface roughness evolution of nanocomposite thin films

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; Hosson, J. Th. M. de

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growing interface is explained by ballistic effects resulting from impingements of ions to the growing thin film. These ballistic effects are sensitive to the flux and energy of impinging ions. The predictions of the model are compared with experimental data, and it is concluded that the thin film roughness can be further controlled by adjusting waveform, frequency, and width of dc pulses.

  13. Density inhomogeneity in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Li; Solbach, Axel; Klemradt, Uwe; Weirich, Thomas; Mayer, Joachim; Böttger, Ulrich; Schorn, Peter J.; Waser, Rainer

    2006-07-01

    Structural investigations of Pb(Zr ,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition on Pt /TiOx electrode stacks were performed using grazing incidence x-ray specular reflectivity of synchrotron radiation and transmission electron microscopy. A density inhomogeneity, i.e., a sublayer structure, in the PZT thin films was observed; the upper PZT sublayer had a lower density and the lower sublayer had a higher density. The influence of the density inhomogeneity, as a possible extrinsic contribution to size effects in ferroelectric thin films, was discussed.

  14. Weld Repair of Thin Aluminum Sheet

    NASA Technical Reports Server (NTRS)

    Beuyukian, C. S.; Mitchell, M. J.

    1986-01-01

    Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

  15. Thin wetting film lensless imaging

    NASA Astrophysics Data System (ADS)

    Allier, C. P.; Poher, V.; Coutard, J. G.; Hiernard, G.; Dinten, J. M.

    2011-03-01

    Lensless imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E.coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm2 to 12 mm2 to 24 mm2, which allows the detection of bacteria contained in 0.5μl to 4μl to 10μl, respectively.

  16. VUV thin films, chapter 7

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.

    1993-01-01

    The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.

  17. Thin cylindrical sheets of air

    NASA Astrophysics Data System (ADS)

    Thoroddsen, Sigurdur; Beilharz, Daniel; Guyon, Axel; Li, Er Qiang; Thoraval, Marie-Jean

    2014-11-01

    Drops impacting at low velocities onto a pool surface can stretch out thin hemispheric sheets of air. These air sheets can remain intact until they reach submicron thicknesses, whereby they rupture to form myriad of microbubbles. By impacting a higher-viscosity drop onto a lower-viscosity pool, we have explored new geometries of such air films. In this way we are able to maintain stable air-layers which can wrap around the entire drop to form anti-bubbles, i.e. spherical air layers bounded by inner and outer liquid masses. Furthermore, for the most viscous drops they enter the pool trailing a viscous thread from the pinch-off from the nozzle. The air sheet can also wrap around these treads and remain stable over extended time to form a cylindrical air sheet. We study the parameter regime where these structures appear and their subsequent breakup. The stability of these air cylinders is inconsistent with inviscid stability theory, suggesting stabilization by lubrication forces within the submicron air layer.

  18. Photoconductivity of thin organic films

    NASA Astrophysics Data System (ADS)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  19. Ultra-thin multilayer capacitors.

    SciTech Connect

    Renk, Timothy Jerome; Monson, Todd C.

    2009-06-01

    The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report details some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation.

  20. Reconnection in thin current sheets

    NASA Astrophysics Data System (ADS)

    Tenerani, Anna; Velli, Marco; Pucci, Fulvia; Rappazzo, A. F.

    2016-05-01

    It has been widely believed that reconnection is the underlying mechanism of many explosive processes observed both in nature and laboratory, but the question of reconnection speed and initial trigger have remained mysterious. How is fast magnetic energy release triggered in high Lundquist (S) and Reynolds (R) number plasmas?It has been shown that a tearing mode instability can grow on an ideal timescale, i.e., independent from the the Lundquist number, once the current sheet thickness becomes thin enough, or rather the inverse aspect ratio a/L reaches a scale a/L~S-1/3. As such, the latter provides a natural, critical threshold for current sheets that can be formed in nature before they disrupt in a few Alfvén time units. Here we discuss the transition to fast reconnection extended to simple viscous and kinetic models and we propose a possible scenario for the transition to explosive reconnection in high-Lundquist number plasmas, that we support with fully nonlinear numerical MHD simulations of a collapsing current sheet.

  1. Motivations for dieting: Drive for Thinness is different from Drive for Objective Thinness.

    PubMed

    Chernyak, Yelena; Lowe, Michael R

    2010-05-01

    Drive for thinness is a cardinal feature of bulimia nervosa. However, the widely used Drive for Thinness (DFT) subscale of the Eating Disorder Inventory (Garner, 2004; Garner, Olmstead, & Polivy, 1983) appears to measure a desire to be thinner, not a desire to be objectively thin. We developed the Drive for Objective Thinness (DFOT) Scale and compared unrestrained and restrained eaters and those with bulimia nervosa on the DFT subscale, Goldfarb's Fear of Fat Scale (GFFS; Goldfarb, Dykens, & Gerrard, 1983), and the DFOT Scale. Restrained eaters had higher scores than unrestrained eaters on the DFT subscale and the GFFS, but both groups had low scores on the DFOT Scale. Only the group with bulimia nervosa showed elevated scores on the DFOT Scale. We conclude that restrained eaters diet mostly to avoid weight gain, that individuals with bulimia nervosa diet to achieve thinness and avoid fatness, and that the drive for objective thinness is a unique feature of bulimia nervosa.

  2. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  3. Carrier lifetimes in thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  4. Highly stretchable wrinkled gold thin film wires

    PubMed Central

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-01-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications. PMID:26937042

  5. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  6. Ion Implantation of Zinc Sulphide Thin Films,

    DTIC Science & Technology

    The report considers the use of ion implantation as a means of preparing rare earth doped thin films of zinc sulphide, and presents preliminary results on the luminescence of such films doped with Tb and Er166 ions. (Author)

  7. Electrical Properties of Thin Films of Alumina.

    DTIC Science & Technology

    The report consists of a literature survey on the electrical properties of alumina and aluminum oxide thin films . A bibliographic listing of reports is included along with abstracts from most of them.

  8. Method for making thin carbon foam electrodes

    DOEpatents

    Pekala, R.W.; Mayer, S.T.; Kaschmitter, J.L.; Morrison, R.L.

    1999-08-03

    A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material is disclosed. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.

  9. Method for making thin carbon foam electrodes

    DOEpatents

    Pekala, Richard W.; Mayer, Steven T.; Kaschmitter, James L.; Morrison, Robert L.

    1999-01-01

    A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.

  10. Highly stretchable wrinkled gold thin film wires

    SciTech Connect

    Kim, Joshua Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  11. Performance Characterization of Monolithic Thin Film Resistors

    NASA Astrophysics Data System (ADS)

    Yin, Rong

    Thin film resistors have a large resistance range and stable performance under high temperature operating condition. Thin film resistors trimmed by laser beam are able to achieve very high precision on resistance value. As a result, thin film resistors have been widely used to improve the performance of integrated circuits such as operational amplifier, analog-to-digital (A/D) and digital -to-analog (D/A) converters, etc. In this dissertation, a new class of thin film resistors, silicon chrome (SiCr) thin film resistors, has been investigated at length. From thin film characterization to aging behavior modelling, we have carried out a series of engineering activities. The characteristics of the SiCr thin film incorporated into three bipolar processes were first determined. After laser trimming, we have measured a couple of physical parameters of the SiCr film in the heat affected zone (HAZ). This is the first time the sheet resistance and the temperature coefficient of resistance (TCR) of thin film in the HAZ have been characterized. Both thermal and d.c. load accelerated aging tests were performed. The test structures were subjected to the aging for 1000 hours. Based on the test data, we not only evaluated the classical thermal aging model for untrimmed thin film resistors, but also established several empirical thermal aging models for trimmed resistors and d.c. load aging models for both trimmed and untrimmed thin film resistors. All the experiments were carried out for both conventional bar resistors and our new Swiss Cheese (SC) resistors. For the first time, the performance of laser trimmed SC resistors, which was experimentally evaluated, shown a clear superiority over that of trimmed bar resistors. Besides these experiments, we have examined different die attach techniques and their effects on thin film resistors. Also, we have developed a number of hardware systems and software tools, such as a temperature controller, d.c. current source, temperature

  12. Multilayer Thin Film Sensors for Damage Diagnostics

    NASA Astrophysics Data System (ADS)

    Protasov, A. G.; Gordienko, Y. G.; Zasimchuk, E. E.

    2006-03-01

    The new innovative approach to damage diagnostics within the production and maintenance/servicing procedures in industry is proposed. It is based on the real-time multiscale monitoring of the smart-designed multilayer thin film sensors of fatigue damage with the standard electrical input/output interfaces which can be connected to the embedded and on-board computers. The multilayer thin film sensors supply information about the actual unpredictable deformation damage, actual fatigue life, strain localization places, damage spreading, etc.

  13. Thin-film reliability and engineering overview

    NASA Technical Reports Server (NTRS)

    Ross, R. G., Jr.

    1984-01-01

    The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

  14. Thin Wall Cast Iron: Phase II

    SciTech Connect

    Doru M. Stefanescu

    2005-07-21

    The development of thin-wall technology allows the designers of energy consuming equipment to select the most appropriate material based on cost/material properties considerations, and not solely on density. The technology developed in this research project will permit the designers working for the automotive industry to make a better informed choice between competing materials and thin wall cast iron, thus decreasing the overall cost of the automobile.

  15. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  16. Research on Advanced Thin Film Batteries

    SciTech Connect

    Goldner, Ronald B.

    2003-11-24

    During the past 7 years, the Tufts group has been carrying out research on advanced thin film batteries composed of a thin film LiCo02 cathode (positive electrode), a thin film LiPON (lithium phosphorous oxynitride) solid electrolyte, and a thin film graphitic carbon anode (negative electrode), under grant DE FG02-95ER14578. Prior to 1997, the research had been using an rfsputter deposition process for LiCoOi and LiPON and an electron beam evaporation or a controlled anode arc evaporation method for depositing the carbon layer. The pre-1997 work led to the deposition of a single layer cell that was successfully cycled for more than 400 times [1,2] and the research also led to the deposition of a monolithic double-cell 7 volt battery that was cycled for more than 15 times [3]. Since 1997, the research has been concerned primarily with developing a research-worthy and, possibly, a production-worthy, thin film deposition process, termed IBAD (ion beam assisted deposition) for depositing each ofthe electrodes and the electrolyte of a completely inorganic solid thin film battery. The main focus has been on depositing three materials - graphitic carbon as the negative electrode (anode), lithium cobalt oxide (nominally LiCoCb) as the positive electrode (cathode), and lithium phosphorus oxynitride (LiPON) as the electrolyte. Since 1998, carbon, LiCoOa, and LiPON films have been deposited using the IBAD process with the following results.

  17. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2013-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film solar cells have been considered as the most promising alternatives to crystalline silicon solar cells because of their high photo-electricity conversion efficiency, reliability, and stability. However, many fabrication methods of CIGS thin film are based on vacuum processes such as evaporation and sputtering techniques which are not cost efficient. This work develops a solution method using paste or ink liquid spin-coated on glass that would be competitive to conventional ways in terms of cost effective, non-vacuum needed, and quick processing. A mixture precursor was prepared by dissolving appropriate amounts of composition chemicals. After the mixture solution was cooled, a viscous paste was prepared and ready for spin-coating process. A slight bluish CIG thin film on substrate was then put in a tube furnace with evaporation of metal Se followed by depositing CdS layer and ZnO nanoparticle thin film coating to complete a solar cell fabrication. Structure, absorption spectrum, and photo-electricity conversion efficiency for the as-grown CIGS thin film solar cell are under study.

  18. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  19. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  20. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  1. Thin Films in the Technology of Superhigh Frequencies.

    DTIC Science & Technology

    A comprehensive discussion of the physics, manufacturing processes and applications of thin films in modern communications technology. The following...subjects are discussed in detail: (1) Structure and properties of thin films : vacuum vaporization, cathode sputtering, thin film structure and...physical properties. (2) Thin films as SHF load resistors: peculiarities of SHF resistors, material selection, behavior in an SHF field, cylindrical disc

  2. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... body than those of the B group, and show little or no ground injury. Choice- and fine-quality tobacco... Fair Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak... Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak,...

  3. Ultra Thin Quantum Well Materials

    SciTech Connect

    Dr Saeid Ghamaty

    2012-08-16

    This project has enabled Hi-Z technology Inc. (Hi-Z) to understand how to improve the thermoelectric properties of Si/SiGe Quantum Well Thermoelectric Materials. The research that was completed under this project has enabled Hi-Z Technology, Inc. (Hi-Z) to satisfy the project goal to understand how to improve thermoelectric conversion efficiency and reduce costs by fabricating ultra thin Si/SiGe quantum well (QW) materials and measuring their properties. In addition, Hi-Z gained critical new understanding on how thin film fabrication increases the silicon substrate's electrical conductivity, which is important new knowledge to develop critical material fabrication parameters. QW materials are constructed with alternate layers of an electrical conductor, SiGe and an electrical insulator, Si. Film thicknesses were varied, ranging from 2nm to 10nm where 10 nm was the original film thickness prior to this work. The optimum performance was determined at a Si and SiGe thickness of 4nm for an electrical current and heat flow parallel to the films, which was an important conclusion of this work. Essential new information was obtained on how the Si substrate electrical conductivity increases by up to an order of magnitude upon deposition of QW films. Test measurements and calculations are accurate and include both the quantum well and the substrate. The large increase in substrate electrical conductivity means that a larger portion of the electrical current passes through the substrate. The silicon substrate's increased electrical conductivity is due to inherent impurities and thermal donors which are activated during both molecular beam epitaxy and sputtering deposition of QW materials. Hi-Z's forward looking cost estimations based on future high performance QW modules, in which the best Seebeck coefficient and electrical resistivity are taken from separate samples predict that the electricity cost produced with a QW module could be achieved at <$0.35/W. This price would

  4. Micromotors using magnetostrictive thin films

    NASA Astrophysics Data System (ADS)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  5. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  6. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  7. Childhood Risk Factors for Thin Body Preoccupation and Social Pressure to Be Thin

    ERIC Educational Resources Information Center

    Agras, W. Stewart; Bryson, Susan; Hammer, Lawrence D.; Kraemer, Helena C.

    2007-01-01

    Objective: Thin body preoccupation and social pressure to be thin (TBPSP) in adolescence are risk factors for the development of full and partial bulimia nervosa and binge eating disorder. This study examined precursors of these potent risk factors. Method: A prospective study followed 134 children from birth to 11.0 years and their parents.…

  8. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    SciTech Connect

    Brinker, C.J.; Prakash, S.S.

    1999-09-07

    A method for preparing aerogel thin films by an ambient-pressure, continuous process is disclosed. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  9. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOEpatents

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  10. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  11. Pulsed laser deposition of ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Sengupta, Somnath; McKnight, Steven H.; Sengupta, Louise C.

    1997-05-01

    It has been shown that in bulk ceramic form, the barium to strontium ratio in barium strontium titanium oxide (Ba1- xSrxTiO3, BSTO) affects the voltage tunability and electronic dissipation factor in an inverse fashion; increasing the strontium content reduces the dissipation factor at the expense of lower voltage tunability. However, the oxide composites of BSTO developed at the Army Research Laboratory still maintain low electronic loss factors for all compositions examined. The intent of this study is to determine whether such effects can be observed in the thin film form of the oxide composites. The pulsed laser deposition (PLD) method has been used to deposit the thin films. The different compositions of the compound (with 1 wt% of the oxide additive) chosen were: Ba0.3Sr0.7TiO3, Ba0.4Sr0.6TiO3, Ba0.5Sr0.5TiO3, Ba0.6Sr0.4TiO3, and Ba0.7Sr0.3TiO3. The electronic properties investigated in this study were the dielectric constant and the voltage tunability. The morphology of the thin films were examined using the atomic force microscopy. Fourier transform Raman spectroscopy was also utilized for optical characterization of the thin films. The electronic and optical properties of the thin films and the bulk ceramics were compared. The results of these investigations are discussed.

  12. Thin Ice Films at Mineral Surfaces.

    PubMed

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  13. Thin film absorber for a solar collector

    DOEpatents

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  14. Mesoscale morphologies in polymer thin films.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  15. Infrared radiation of thin plastic films.

    NASA Technical Reports Server (NTRS)

    Tien, C. L.; Chan, C. K.; Cunnington, G. R.

    1972-01-01

    A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

  16. Thin-film nanocapacitor and its characterization

    NASA Astrophysics Data System (ADS)

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-03-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor. TiO2 with a 400 nm thickness and a high dielectric constant (ɛr ~ 100) was coated between the gold metal layers by using sol gel and dip-coating techniques. A RC circuit was built to measure the capacitance of the nanocapacitors. Some fundamental thin-film characterization equipment such as a four-point probe, a step profiler and an atomic force microscope were used in this laboratory to characterize the devices' morphology and electrical properties.

  17. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  18. Electrostatic thin film chemical and biological sensor

    DOEpatents

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  19. Coalescence and percolation in thin metal films

    NASA Astrophysics Data System (ADS)

    Yu, X.; Duxbury, P. M.; Jeffers, G.; Dubson, M. A.

    1991-12-01

    Metals thermally evaporated onto warm insulating substrates evolve to the thin-film state via the morphological sequence: compact islands, elongated islands, percolation, hole filling, and finally the thin-film state. The coverage at which the metal percolates (pc) is often considerably higher than that predicted by percolation models, such as inverse swiss cheese or lattice percolation. Using a simple continuum model, we show that high-pc's arise naturally in thin films that exhibit a crossover from full coalescence of islands at early stages of growth to partial coalescence at later stages. In this interrupted-coalescence model, full coalescence of islands occurs up to a critical island radius Rc, after which islands overlap, but do not fully coalesce. We present the morphology of films and the critical area coverages generated by this model.

  20. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1994-11-01

    Small thin-film rechargeable cells have been fabricated with a lithium phosphorus oxyniuide electrolyte, Li metal anode, and Li{sub 1-x}Mn{sub 2}O{sub 4} as the cathode film. The cathode films were fabricated by several different techniques resulting in both crystalline and amorphous films. These were compared by observing the cell discharge behavior. Estimates have been made for the scale-up of such a thin-film battery to meet the specifications for the electric vehicle application. The specific energy, energy density, and cycle life are expected to meet the USABC mid-term criteria. However, the areas of the thin-films needed to fabricate such a cell are very large. The required areas could be greatly reduced by operating the battery at temperatures near 100{degrees}C or by enhancing the lithium ion transport rate in the cathode material.

  1. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  2. Method for making thin polypropylene film

    DOEpatents

    Behymer, R.D.; Scholten, J.A.

    1985-11-21

    An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

  3. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  4. Keratoconus and related noninflammatory corneal thinning disorders.

    PubMed

    Krachmer, J H; Feder, R S; Belin, M W

    1984-01-01

    Keratoconus and other noninflammatory corneal thinning disorders (keratoglobus, pellucid marginal degeneration and posterior keratoconus) are characterized by progressive corneal thinning, protrusion and scarring; the result is distorted and decreased vision. The etiology and pathogenesis of these disorders are unknown but may be associated with a variety of factors, including contact lens wear, eye rubbing, Down's syndrome, atopic disease, connective tissue disease, tapetoretinal degeneration and inheritance. Recent advances in techniques for biochemical and pathological investigation are now allowing further exploration in these areas. Early diagnosis is aided by the finding of irregular corneal astigmatism with inferior corneal steepening. Treatment ranges from simple spectacle correction to keratoplasty. In this review, the past and present literature on corneal thinning disorders is reviewed and practical approaches to diagnosis and management are outlined.

  5. Optical diffraction analysis of petrographic thin sections.

    PubMed

    Power, P C; Pincus, H J

    1974-10-18

    Diffraction patterns that are highly reproducible, of useful quality, and consistent with the input generating them can be easily obtained with a microscope system. The input can be either a reduced photograph or a thin section. With two exceptions, the relationships between a thin section and its diffraction pattern produced by a petrographic microscope are the same as the relationships between a photographic input and its diffraction pattern produced by a conventional ODA system. The exceptions are that the diffraction patterns generated directly by the thin sections may be asymmetrical or, if the thin section is sufficiently heterogeneous, may be smeared. The microscope system is generally more useful than a conventional ODA system for the analysis of microfabric in thin sections. One can readily use the microscope system to analyze elements of widely varying spatial frequency simply by changing the objectives. The diffraction patterns can be magnified by changing to a higherpower ocular. In most cases the microscope-generated diffraction pattern transmits the useful spatial information in the thin section more completely than the conventionally produced diffraction pattern; the photographic inputs for the conventionally produced diffraction pattern emphasize lower-frequency spatial information. This property, combined with the microscope system's better response to twinning, makes the microscope more sensitive to commonly used microfabric elements. For the analysis of thin sections, a conventional ODA system is superior to the microscope system in only three cases. First, if one wants to analyze the entire thin section at one time, a conventional system must be used with a photographic input of the thin section. Second, if the thin section is extremely heterogeneous (crystallographically or mineralogically), the microscope-generated diffraction pattern may exhibit gross smearing even with the highestpower objectives available. Finally, the thin section may

  6. Vibration welding system with thin film sensor

    DOEpatents

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  7. Microscale damping using thin film active materials

    NASA Astrophysics Data System (ADS)

    Kerrigan, Catherine A.; Ho, Ken K.; Mohanchandra, K. P.; Carman, Gregory P.

    2007-04-01

    This paper focuses on understanding and developing a new approach to dampen MEMS structures using both experiments and analytical techniques. Thin film Nitinol and thin film Terfenol-D are evaluated as a damping solution to the micro scale damping problem. Stress induced twin boundary motion in Nitinol is used to passively dampen potentially damaging vibrations. Magnetic domain wall motion is used to passively dampen vibration in Terfenol-D. The thin films of Nitinol, Nitinol/Silicon laminates and Nitinol/Terfenol-D/Nickel laminates have been produced using a sputter deposition process and damping properties have been evaluated. Dynamic testing shows substantial damping (tan δ) measurable in each case. Nitinol film samples were tested in the Differential Scanning Calorimetry (DSC) to determine phase transformation temperatures. The twin boundary mechanism by which energy absorption occurs is present at all points below the Austenite start temperature (approximately 69°C in our film) and therefore allows damping at cold temperatures where traditional materials fail. Thin film in the NiTi/Si laminate was found to produce substantially higher damping (tan δ = 0.28) due to the change in loading condition. The NiTi/Si laminate sample was tested in bending allowing the twin boundaries to be reset by cyclic tensile and compressive loads. The thin film Terfenol-D in the Nitinol/Terfenol-D/Nickel laminate was shown to produce large damping (tan δ = 0.2). In addition to fabricating and testing, an analytical model of a heterogeneous layered thin film damping material was developed and compared to experimental work.

  8. Axisymmetric instability in a thinning electrified jet.

    PubMed

    Dharmansh; Chokshi, Paresh

    2016-04-01

    The axisymmetric stability of an electrified jet is analyzed under electrospinning conditions using the linear stability theory. The fluid is considered Newtonian with a finite electrical conductivity, modeled as a leaky dielectric medium. While the previous studies impose axisymmetric disturbances on a cylindrical jet of uniform radius, referred to as the base state, in the present study the actual thinning jet profile, obtained as the steady-state solution of the one-dimensional slender filament model, is treated as the base state. The analysis takes into account the role of variation in the jet variables like radius, velocity, electric field, and surface charge density along the thinning jet in the stability behavior. The eigenspectrum of the axisymmetric disturbance growth rate is constructed from the linearized disturbance equations discretized using the Chebyshev collocation method. The most unstable growth rate for the thinning jet is significantly different from that for the uniform radius jet. For the same electrospinning conditions, while the uniform radius jet is predicted to be highly unstable, the thinning jet profile is found to be unstable but with a relatively very low growth rate. The stabilizing role of the thinning jet is attributed to the variation in the surface charge density as well as the extensional deformation rate in the fluid ignored in the uniform radius jet analysis. The dominant mode for the thinning jet is an oscillatory conducting mode driven by the field-charge coupling. The disturbance energy balance finds the electric force to be the dominant force responsible for the disturbance growth, potentially leading to bead formation along the fiber. The role of various material and process parameters in the stability behavior is also investigated.

  9. Axisymmetric instability in a thinning electrified jet

    NASA Astrophysics Data System (ADS)

    Dharmansh; Chokshi, Paresh

    2016-04-01

    The axisymmetric stability of an electrified jet is analyzed under electrospinning conditions using the linear stability theory. The fluid is considered Newtonian with a finite electrical conductivity, modeled as a leaky dielectric medium. While the previous studies impose axisymmetric disturbances on a cylindrical jet of uniform radius, referred to as the base state, in the present study the actual thinning jet profile, obtained as the steady-state solution of the one-dimensional slender filament model, is treated as the base state. The analysis takes into account the role of variation in the jet variables like radius, velocity, electric field, and surface charge density along the thinning jet in the stability behavior. The eigenspectrum of the axisymmetric disturbance growth rate is constructed from the linearized disturbance equations discretized using the Chebyshev collocation method. The most unstable growth rate for the thinning jet is significantly different from that for the uniform radius jet. For the same electrospinning conditions, while the uniform radius jet is predicted to be highly unstable, the thinning jet profile is found to be unstable but with a relatively very low growth rate. The stabilizing role of the thinning jet is attributed to the variation in the surface charge density as well as the extensional deformation rate in the fluid ignored in the uniform radius jet analysis. The dominant mode for the thinning jet is an oscillatory conducting mode driven by the field-charge coupling. The disturbance energy balance finds the electric force to be the dominant force responsible for the disturbance growth, potentially leading to bead formation along the fiber. The role of various material and process parameters in the stability behavior is also investigated.

  10. MOF thin films: existing and future applications.

    PubMed

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  11. Thin-Film Organic Electronic Devices

    NASA Astrophysics Data System (ADS)

    Katz, Howard E.; Huang, Jia

    2009-08-01

    We review recently published advancements in thin-film organic devices, ranging from the composition and properties of organic materials to be used in devices, to the applications of devices, with special emphasis on thin-film transistors, diodes, and chemical sensors. We present exemplary materials used in each kind of device, outline the physical mechanisms behind the functioning of the devices, and discuss the most advanced capabilities of the devices and device assemblies. Advantages to the selection of organic and polymeric materials, future prospects, and challenges for organic-based electronics are also considered.

  12. Thin-film rechargeable lithium batteries

    SciTech Connect

    Dudney, N.J.; Bates, J.B.; Lubben, D.

    1995-06-01

    Thin-film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin-film battery.

  13. Elastohydrodynamic studies using thin film transducers

    NASA Astrophysics Data System (ADS)

    Safa, M. M. A.; MacPherson, P. B.

    1984-01-01

    Thin film microtransducers for application to the study of the variation of pressure, temperature, and oil film thickness in an elastohydrodynamically lubricated, nominal line contact were developed. Fabrication techniques were improved to enhance the useful life. Techniques to achieve higher resolution by reducing sensor size and improving the signal monitoring circuitry were developed. Material properties in thin film form used in fabricating the sensors were examined. Possible sources of errors in interpreting the results obtained from these devices were studied. Results under various operating conditions were compared with theoretical and experimental results, and reasonably good agreement is found.

  14. Feasibility Study of Thin Film Thermocouple Piles

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  15. Micro-sensor thin-film anemometer

    NASA Technical Reports Server (NTRS)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  16. Thin shells joining local cosmic string geometries

    NASA Astrophysics Data System (ADS)

    Eiroa, Ernesto F.; Rubín de Celis, Emilio; Simeone, Claudio

    2016-10-01

    In this article we present a theoretical construction of spacetimes with a thin shell that joins two different local cosmic string geometries. We study two types of global manifolds, one representing spacetimes with a thin shell surrounding a cosmic string or an empty region with Minkowski metric, and the other corresponding to wormholes which are not symmetric across the throat located at the shell. We analyze the stability of the static configurations under perturbations preserving the cylindrical symmetry. For both types of geometries we find that the static configurations can be stable for suitable values of the parameters.

  17. Borocarbide thin films and tunneling measurements.

    SciTech Connect

    Iavarone, M.; Andreone, A.; Cassinese, A.; Dicapual, R.; giannil, L.; Vagliol, R.; DeWilde, Y.; Crabtree, G. W.

    2000-06-15

    The results obtained by their group in thin film fabrication and STM tunneling on superconducting borocarbides YNi{sub 2}B{sub 2}C have been be briefly reviewed. Results concerning the microwave surface impedance and the S/N planar junctions on LuNi{sub 2}B{sub 2}C thin films have been also presented and analyzed. These new data unambiguously confirm the full BCS nature of the superconducting gap in borocarbides and the absence of significant pair-breaking effects in LuNi{sub 2}B{sub 2}C.

  18. Magnetic shape memory effect in thin foils

    NASA Astrophysics Data System (ADS)

    Heczko, Oleg; Soroka, Aleksandr; Hannula, Simo-Pekka

    2008-07-01

    The magnetic shape memory (MSM) effect was observed in Ni-Mn-Ga freestanding thin foils down to 90μm in thickness using top-down approach. The foils were prepared by thinning the bulk crystals exhibiting MSM effect. The effect was evaluated from the magnetization curves. The significant decrease in magnetic field needed to initiate the MSM effect (magnetic field induced strain or martensite structure reorientation) was observed for the studied foils down to μ0H=0.088T or H =70kA/m. Observation suggests that the pinning of twin boundaries on the internal obstacles rather than pinning on surface lowers twin boundaries' mobility.

  19. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  20. Glassy dynamics in thin films of polystyrene

    NASA Astrophysics Data System (ADS)

    Fukao, Koji; Koizumi, Hiroki

    2008-02-01

    Glassy dynamics was investigated for thin films of atactic polystyrene by complex electric capacitance measurements using dielectric relaxation spectroscopy. During the isothermal aging process the real part of the electric capacitance increased with time, whereas the imaginary part decreased with time. It follows that the aging time dependences of real and imaginary parts of the electric capacitance were primarily associated with change in volume (film thickness) and dielectric permittivity, respectively. Further, dielectric permittivity showed memory and rejuvenation effects in a similar manner to those observed for poly(methyl methacrylate) thin films. On the other hand, volume did not show a strong rejuvenation effect.

  1. Emittance Theory for Thin Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  2. Thin glass processing with various laser sources

    NASA Astrophysics Data System (ADS)

    Collins, Adam R.; Milne, David; Prieto, Camilo; O'Connor, Gerard M.

    2015-03-01

    Laser processing of thin glass has proven problematic due to the inefficient coupling of optical energy into glass and the difficulty achieving an economical processing speed while maintaining cut quality. Laser glass processing is pertinent to touch screen display, microfluidic, microoptic and photovoltaic applications. The results of the laser scribing of 110 μm thick alkali free glass with various laser sources are presented. The laser sources include a CO₂ laser, nanosecond UV laser and femtosecond IR laser. The contrasting absorption mechanisms are discussed. Cut quality and processing speed are characterised using SEM and optical microscopy techniques. Alternative laser techniques for thin glass processing are also considered.

  3. Performance tests of large thin vacuum windows

    SciTech Connect

    Hall Crannell

    2011-02-01

    Tests of thin composition vacuum windows of the type used for the Tagger in Hall B at the Thomas Jefferson National Accelerator Facility are described. Three different tests have been performed. These include: (1) measurement of the deformation and durability of a window under long term (>8 years) almost continuous vacuum load, (2) measurement of the deformation as a function of flexing of the window as it is cycled between vacuum and atmosphere, and (3) measurement of the relative diffusion rate of gas through a variety of thin window membranes.

  4. Monostatic cloaking using electrically thin inhomogeneous media

    NASA Astrophysics Data System (ADS)

    Ruphuy, Miguel; Ramahi, Omar M.

    2016-11-01

    We introduce electrically thin cloaking devices that deflect a plane wave based on the principles of phase compensation and wave interference. An electrically large perfectly conducting object is cloaked by materials that control the phase velocity of the refracted wave. The design is based on gradient index materials to reflect incident waves in different directions resulting in a significant reduction in monostatic radar cross section. Unlike earlier cloaking devices that were constrained by specific geometry and involved complex media, the devices introduced here are electrically thin and can be made conformable to the surface of the structure to be cloaked. Numerical simulations are presented to validate the design concept presented here.

  5. Towards efficient solar-to-hydrogen conversion: Fundamentals and recent progress in copper-based chalcogenide photocathodes

    NASA Astrophysics Data System (ADS)

    Chen, Yubin; Feng, Xiaoyang; Liu, Maochang; Su, Jinzhan; Shen, Shaohua

    2016-09-01

    Photoelectrochemical (PEC) water splitting for hydrogen generation has been considered as a promising route to convert and store solar energy into chemical fuels. In terms of its large-scale application, seeking semiconductor photoelectrodes with high efficiency and good stability should be essential. Although an enormous number of materials have been explored for solar water splitting in the last several decades, challenges still remain for the practical application. P-type copper-based chalcogenides, such as Cu(In, Ga)Se2 and Cu2ZnSnS4, have shown impressive performance in photovoltaics due to narrow bandgaps, high absorption coefficients, and good carrier transport properties. The obtained high efficiencies in photovoltaics have promoted the utilization of these materials into the field of PEC water splitting. A comprehensive review on copper-based chalcogenides for solar-to-hydrogen conversion would help advance the research in this expanding area. This review will cover the physicochemical properties of copper-based chalco-genides, developments of various photocathodes, strategies to enhance the PEC activity and stability, introductions of tandem PEC cells, and finally, prospects on their potential for the practical solar-to-hydrogen conversion. We believe this review article can provide some insights of fundamentals and applications of copper-based chalco-genide thin films for PEC water splitting.

  6. Photovoltaic Properties of Selenized CuGa/In Films with Varied Compositions

    SciTech Connect

    Muzzillo, Christopher P.; Mansfield, Lorelle M.; Ramanathan, Kannan; McGoffin, J. Tyler; Anderson, Timothy J.

    2016-11-21

    Thin CuGa/In films with varied compositions were deposited by co-evaporation and then selenized in situ with evaporated selenium. The selenized Cu(In, Ga)Se2 absorbers were used to fabricate 390 solar cells. Cu/(Ga+In) and Ga/(Ga+In) (Cu/III and Ga/III) were independently varied, and photovoltaic performance was optimal at Cu/III of 77-92% for all Ga/III compositions studied (Ga/III ~ 30, 50, and 70%). The best absorbers at each Ga/III composition were characterized with time-resolved photoluminescence, scanning electron microscopy, and secondary ion mass spectrometry, and devices were studied with temperature-dependent current density-voltage, light and electrical biased quantum efficiency, and capacitance-voltage. The best cells with Ga/III ~ 30, 50, and 70% had efficiencies of 14.5, 14.4, and 12.2% and maximum power temperature coefficients of -0.496, -0.452, and -0.413%/degrees C, respectively. This resulted in the Ga/III ~ 50% champion having the highest efficiency at temperatures greater than 40 degrees C, making it the optimal composition for practical purposes. This optimum is understood as a result of the absorber's band gap grading- where minimum band gap dominates short-circuit current density, maximum space charge region band gap dominates open-circuit voltage, and average absorber band gap dominates maximum power temperature coefficient.

  7. FDTD modeling of thin impedance sheets

    NASA Technical Reports Server (NTRS)

    Luebbers, Raymond J.; Kunz, Karl S.

    1991-01-01

    Thin sheets of resistive or dielectric material are commonly encountered in radar cross section calculations. Analysis of such sheets is simplified by using sheet impedances. In this paper it is shown that sheet impedances can be modeled easily and accurately using Finite Difference Time Domain (FDTD) methods.

  8. Thin-Slice Perception Develops Slowly

    ERIC Educational Resources Information Center

    Balas, Benjamin; Kanwisher, Nancy; Saxe, Rebecca

    2012-01-01

    Body language and facial gesture provide sufficient visual information to support high-level social inferences from "thin slices" of behavior. Given short movies of nonverbal behavior, adults make reliable judgments in a large number of tasks. Here we find that the high precision of adults' nonverbal social perception depends on the slow…

  9. Analysis of a Thin Optical Lens Model

    ERIC Educational Resources Information Center

    Ivchenko, Vladimir V.

    2011-01-01

    In this article a thin optical lens model is considered. It is shown that the limits of its applicability are determined not only by the ratio between the thickness of the lens and the modules of the radii of curvature, but above all its geometric type. We have derived the analytical criteria for the applicability of the model for different types…

  10. On the Theory of Thin Shallow Shells

    NASA Technical Reports Server (NTRS)

    Nazarov, A. A.

    1956-01-01

    This report is concerned with the theory of thin shallow shells. It does not employ the lines of curvature as the coordinate system, but employs "almost cartesian coordinates" or the coordinates obtained by cutting the surface into two mutually orthogonal systems of parallel planes.

  11. Strong field electrodynamics of a thin foil

    SciTech Connect

    Bulanov, Sergei V.; Esirkepov, Timur Zh.; Kando, Masaki; Bulanov, Stepan S.; Rykovanov, Sergey G.; Pegoraro, Francesco

    2013-12-15

    Exact solutions describing the nonlinear electrodynamics of a thin double layer foil are presented. These solutions correspond to a broad range of problems of interest for the interaction of high intensity laser pulses with overdense plasmas, such as frequency upshifting, high order harmonic generation, and high energy ion acceleration.

  12. Interferometry of thick and thin films

    NASA Astrophysics Data System (ADS)

    Conroy, Michael

    2007-06-01

    Interferometry is now an established technique for the measurement of surface topography. It has the capability of combining sub-nanometre resolution. A very useful extension to its capability is the ability to measure thick and thin films on a local scale. For films with thicknesses in excess of 1-2μm (depending on refractive index), the SWLI interaction with the film leads simply the formation of two localised fringes, each corresponding to a surface interface. It is relatively trivial to locate the positions of these two envelope maxima and therefore determine the film thickness, assuming the refractive index is known. For thin films (with thicknesses ~20nm to ~2μm, again depending on the index), the SWLI interaction leads to the formation of a single interference maxima. In this context, it is appropriate to describe the thin film structure in terms of optical admittances; it is this regime that is addressed through the introduction of a new function, the 'helical conjugate field' (HCF) function. This function may be considered as providing a 'signature' of the multilayer measured so that through optimization, the thin film multilayer may be determined on a local scale.

  13. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  14. Thin films, asphaltenes, and reservoir wettability

    SciTech Connect

    Kaminsky, R.; Bergeron, V.; Radke, C.J. |

    1993-04-01

    Reservoir wettability impacts the success of oil recovery by waterflooding and other methods. To understand wettability and its alteration, thin-film forces in solid-aqueous-oil systems must be elucidated. Upon rupture of thick aqueous films separating the oil and rock phases, asphaltene components in the crude oil adsorb irreversibly on the solid surface, changing it from water-wet to oil-wet. Conditions of wettability alteration can be found by performing adhesion tests, in which an oil droplet is brought into contact with a solid surface. Exceeding a critical capillary pressure destabilizes the film, causing spontaneous film rupture to a molecularly adsorbed layer and oil adhesion accompanied by pinning at the three-phase contact line. The authors conduct adhesion experiments similar to those of Buckley and Morrow and simultaneously examine the state of the underlying thin film using optical microscopy and microinterferometry. Aqueous thin films between an asphaltic Orcutt crude oil and glass surfaces are studied as a function of aqueous pH and salinity. For the first time, they prove experimentally that strongly water-wet to strongly oil-wet wettability alteration and contact-angle pinning occur when thick aqueous films thin to molecularly adsorbed films and when the oil phase contains asphaltene molecules.

  15. Dielectric and Optical Properties of Thin Films.

    DTIC Science & Technology

    1978-08-01

    Is const ructed from a thin slice of bismuth silicon oxlde,~ a cubic crystal exhibiting the Pockels effect. The crystal also is photoconductive when... Photoconductive diameter electro -optical crystal ~~~~~~~~~~~~~~~~~ i12SiO20) Electrode 2 Insulator layer Electrode 1 (paralene) Figure 1-1

  16. Welding Wires To Thin Thermocouple Films

    NASA Technical Reports Server (NTRS)

    Holanda, Raymond; Kim, Walter S.; Danzey, Gerald A.; Pencil, Eric; Wadel, Mary

    1993-01-01

    Parallel-gap resistance welding yields joints surviving temperatures of about 1,000 degrees C. Much faster than thermocompression bonding. Also exceeds conductive-paste bonding and sputtering thin films through porous flame-sprayed insulation on prewelded lead wires. Introduces no foreign material into thermocouple circuit and does not require careful control of thickness of flame-sprayed material.

  17. Trend Analysis of Controlled Thin Metallization Flashover

    DTIC Science & Technology

    2005-06-01

    Abstract Tests validating the consistency and repeatability of controlled electrical surface flashover on metallized thin film insulators...were performed. The study of electrical surface flashover has been mainly confined to its prevention under various contaminated conditions such as...trends discussed in the paper show promise for novel low energy light sources. I. INTRODUCTION Surface flashover is a phenomenon in which

  18. Thin solar cell and lightweight array

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr. (Inventor); Weinberg, Irving (Inventor)

    1991-01-01

    A thin, lightweight solar cell that utilizes front contact metallization is presented. Both the front light receiving surface of the solar cell and the facing surface of the cover glass are recessed to accommodate this metallization. This enables the two surfaces to meet flush for an optimum seal.

  19. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments Database

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  20. UV absorption control of thin film growth

    DOEpatents

    Biefeld, Robert M.; Hebner, Gregory A.; Killeen, Kevin P.; Zuhoski, Steven P.

    1991-01-01

    A system for monitoring and controlling the rate of growth of thin films in an atmosphere of reactant gases measures the UV absorbance of the atmosphere and calculates the partial pressure of the gases. The flow of reactant gases is controlled in response to the partial pressure.

  1. Thin transparent films formed from powdered glass

    NASA Technical Reports Server (NTRS)

    1965-01-01

    Glass film less than five mils thick is formed from powdered glass dispersed in an organic liquid, deposited on a substrate, and fused into place. The thin films can be cut and shaped for contact lenses, optical filters and insulating layers.

  2. Thinned Mature Deciduous Forest Silvopastures for Appalachia

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Little information is available on effective management and utilization of silvopastures developed from the ubiquitous mature woodlots which comprise 40-50% of small Appalachian farm acreage. We thinned a white oak dominated mature second growth forested area establishing two 0.5 ha, eight-paddock,...

  3. Semiconductor cooling by thin-film thermocouples

    NASA Technical Reports Server (NTRS)

    Tick, P. A.; Vilcans, J.

    1970-01-01

    Thin-film, metal alloy thermocouple junctions do not rectify, change circuit impedance only slightly, and require very little increase in space. Although they are less efficient cooling devices than semiconductor junctions, they may be applied to assist conventional cooling techniques for electronic devices.

  4. Thin-shell wormholes in dilaton gravity

    SciTech Connect

    Eiroa, Ernesto F.; Simeone, Claudio

    2005-06-15

    In this work we construct charged thin-shell Lorentzian wormholes in dilaton gravity. The exotic matter required for the construction is localized in the shell and the energy conditions are satisfied outside the shell. The total amount of exotic matter is calculated and its dependence with the parameters of the model is analyzed.

  5. Method of producing thin cellulose nitrate film

    DOEpatents

    Lupica, S.B.

    1975-12-23

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent.

  6. Thin coatings and films hardness evaluation

    NASA Astrophysics Data System (ADS)

    Matyunin, V. M.; Marchenkov, A. Yu; Demidov, A. N.; Karimbekov, M. A.

    2016-10-01

    The existing thin coatings and films hardness evaluation methods based on indentation with pyramidal indenter on various scale levels are expounded. The impact of scale factor on hardness values is performed. The experimental verification of several existing hardness evaluation methods regarding the substrate hardness value and the “coating - substrate” composite hardness value is made.

  7. Process development of thin strip steel casting

    SciTech Connect

    Sussman, R.C.; Williams, R.S.

    1990-12-01

    An important new frontier is being opened in steel processing with the emergence of thin strip casting. Casting steel directly to thin strip has enormous benefits in energy savings by potentially eliminating the need for hot reduction in a hot strip mill. This has been the driving force for numerous current research efforts into the direct strip casting of steel. The US Department of Energy initiated a program to evaluate the development of thin strip casting in the steel industry. In earlier phases of this program, planar flow casting on an experimental caster was studied by a team of engineers from Westinghouse Electric corporation and Armco Inc. A subsequent research program was designed as a fundamental and developmental study of both planar and melt overflow casting processes. This study was arranged as several separate and distinct tasks which were often completed by different teams of researchers. An early task was to design and build a water model to study fluid flow through different designs of planar flow casting nozzles. Another important task was mathematically modeling of melt overflow casting process. A mathematical solidification model for the formation of the strip in the melt overflow process was written. A study of the material and conditioning of casting substrates was made on the small wheel caster using the melt overflow casting process. This report discusses work on the development of thin steel casting.

  8. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  9. Flexoelectricity in barium strontium titanate thin film

    SciTech Connect

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  10. Thin Layer Chromatography (TLC) of Chlorophyll Pigments.

    ERIC Educational Resources Information Center

    Foote, Jerry

    1984-01-01

    Background information, list of materials needed, procedures used, and discussion of typical results are provided for an experiment on the thin layer chromatography of chlorophyll pigments. The experiment works well in high school, since the chemicals used are the same as those used in paper chromatography of plant pigments. (JN)

  11. NAA thinning of ‘W. Murcott’

    Technology Transfer Automated Retrieval System (TEKTRAN)

    This study was conducted to determine if NAA thinning may be useful for managing cropload in Florida ‘W Murcott’. Trials were conducted in two groves of ages 4 and 6 years. NAA was applied on 13 May, 2010, when fruitlets averaged 10-12 mm in diameter. A randomized complete block design was used, ...

  12. Strong field electrodynamics of a thin foil

    NASA Astrophysics Data System (ADS)

    Bulanov, S. S.; Bulanov, S. V.; Esirkepov, T. Zh.; Kando, M.; Rykovanov, S.; Pegoraro, F.; Schroeder, C. B.; Esarey, E.; Leemans, W. P.

    2017-03-01

    A new one-dimensional analytical model of a thin double layer foil interaction with a laser pulse is presented. It is based on one-dimensional electrodynamics. This model can be used for the study of high intensity laser pulse interactions with overdense plasmas, leading to frequency upshifting, high order harmonic generation, and ion acceleration in different regimes.

  13. Detecting Psychopathy from Thin Slices of Behavior

    ERIC Educational Resources Information Center

    Fowler, Katherine A.; Lilienfeld, Scott O.; Patrick, Christopher J.

    2009-01-01

    This study is the first to demonstrate that features of psychopathy can be reliably and validly detected by lay raters from "thin slices" (i.e., small samples) of behavior. Brief excerpts (5 s, 10 s, and 20 s) from interviews with 96 maximum-security inmates were presented in video or audio form or in both modalities combined. Forty raters used…

  14. Thick Slice and Thin Slice Teaching Evaluations

    ERIC Educational Resources Information Center

    Tom, Gail; Tong, Stephanie Tom; Hesse, Charles

    2010-01-01

    Student-based teaching evaluations are an integral component to institutions of higher education. Previous work on student-based teaching evaluations suggest that evaluations of instructors based upon "thin slice" 30-s video clips of them in the classroom correlate strongly with their end of the term "thick slice" student evaluations. This study's…

  15. An Electrochemical Experiment Using an Optically Transparent Thin Layer Electrode

    ERIC Educational Resources Information Center

    DeAngelis, Thomas P.; Heineman, William R.

    1976-01-01

    Describes a unified experiment in which an optically transparent thin layer electrode is used to illustrate the techniques of thin layer electrochemistry, cyclic voltammetry, controlled potential coulometry, and spectroelectrochemistry. (MLH)

  16. Applications of Direct-Print Imaging with Thin-Sections.

    ERIC Educational Resources Information Center

    Nuhfer, E. B.; Vinopal, R. J.

    1979-01-01

    Describes a process by which prints are produced using thin sections as negatives in a photographic enlarger. Design of a thin section holder, exposure times for common rock types, and several sample illustrations are provided. (Author/MA)

  17. Characteristics of heat transfer fouling of thin stillage using model thin stillage and evaporator concentrates

    NASA Astrophysics Data System (ADS)

    Challa, Ravi Kumar

    The US fuel ethanol demand was 50.3 billion liters (13.3 billion gallons) in 2012. Corn ethanol was produced primarily by dry grind process. Heat transfer equipment fouling occurs during corn ethanol production and increases the operating expenses of ethanol plants. Following ethanol distillation, unfermentables are centrifuged to separate solids as wet grains and liquid fraction as thin stillage. Evaporator fouling occurs during thin stillage concentration to syrup and decreases evaporator performance. Evaporators need to be shutdown to clean the deposits from the evaporator surfaces. Scheduled and unscheduled evaporator shutdowns decrease process throughput and results in production losses. This research were aimed at investigating thin stillage fouling characteristics using an annular probe at conditions similar to an evaporator in a corn ethanol production plant. Fouling characteristics of commercial thin stillage and model thin stillage were studied as a function of bulk fluid temperature and heat transfer surface temperature. Experiments were conducted by circulating thin stillage or carbohydrate mixtures in a loop through the test section which consisted of an annular fouling probe while maintaining a constant heat flux by electrical heating and fluid flow rate. The change in fouling resistance with time was measured. Fouling curves obtained for thin stillage and concentrated thin stillage were linear with time but no induction periods were observed. Fouling rates for concentrated thin stillage were higher compared to commercial thin stillage due to the increase in solid concentration. Fouling rates for oil skimmed and unskimmed concentrated thin stillage were similar but lower than concentrated thin stillage at 10% solids concentration. Addition of post fermentation corn oil to commercial thin stillage at 0.5% increments increased the fouling rates up to 1% concentration but decreased at 1.5%. As thin stillage is composed of carbohydrates, protein, lipid

  18. Thinning and rupture of a thin liquid film on a heated surface

    SciTech Connect

    Bankoff, S.G.; Davis, S.H.

    1992-08-05

    Results on the dynamics and stability of thin films are summarized on the following topics: forced dryout, film instabilities on a horizontal plane and on inclined planes, instrumentation, coating flows, and droplet spreading. (DLC)

  19. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  20. Workshop on thin film thermal conductivity measurements

    NASA Astrophysics Data System (ADS)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  1. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  2. Thin films for micro solid oxide fuel cells

    NASA Astrophysics Data System (ADS)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  3. Thin Images Reflected in the Water: Narcissism and Girls' Vulnerability to the Thin-Ideal.

    PubMed

    Thomaes, Sander; Sedikides, Constantine

    2016-10-01

    The purpose of this research is to test how adolescent girls' narcissistic traits-characterized by a need to impress others and avoid ego-threat-influence acute adverse effects of thin-ideal exposure. Participants (11-15 years; total N = 366; all female) reported their narcissistic traits. Next, in two experiments, they viewed images of either very thin or average-sized models, reported their wishful identification with the models (Experiment 2), and tasted high-calorie foods in an alleged taste test (both experiments). Narcissism kept girls from wishfully identifying with thin models, which is consistent with the view that narcissistic girls are prone to disengage from thin-ideal exposure. Moreover, narcissism protected vulnerable girls (those who experience low weight-esteem) from inhibiting their food intake, and led other girls (those who consider their appearance relatively unimportant) to increase their food intake. These effects did not generalize to conceptually related traits of self-esteem and perfectionism, and were not found for a low-calorie foods outcome, attesting to the specificity of findings. These experiments demonstrate the importance of narcissism at reducing girls' thin-ideal vulnerability. Girls high in narcissism disengage self-protectively from threats to their self-image, a strategy that renders at least subsets of them less vulnerable to the thin-ideal.

  4. Niobium Thin Film Characterization for Thin Film Technology Used in Superconducting Radiofrequency Cavities

    NASA Astrophysics Data System (ADS)

    Dai, Yishu; Valente-Feliciano, Anne-Marie

    2015-10-01

    Superconducting RadioFrequency (SRF) penetrates about 40-100 nm of the top surface, making thin film technology possible in producing superconducting cavities. Thin film is based on the deposition of a thin Nb layer on top of a good thermal conducting material such as Al or Cu. Thin film allows for better control of the surface and has negligible response to the Earth's magnetic field, eliminating the need for magnetic shielding of the cavities. Thin film superconductivity depends heavily on coating process conditions, involving controllable parameters such as crystal plane orientation, coating temperature, and ion energy. MgO and Al2O3 substrates are used because they offer very smooth surfaces, ideal for studying film growth. Atomic Force Microscopy is used to characterize surface's morphology. It is evident that a lower nucleation energy and a long coating time increases the film quality in the r-plane sapphire crystal orientation. The quality of the film increases with thickness. Nb films coated on r-plane, grow along the (001) plane and yield a much higher RRR compared to the films grown on a- and c-planes. This information allows for further improvement on the research process for thin film technology used in superconducting cavities for the particle accelerators. National Science Foundation, Department of Energy, Jefferson Lab, Old Dominion University.

  5. Matrix.Vector Multiplication In Thin Photorefractive Crystal

    NASA Technical Reports Server (NTRS)

    Cheng, Li-Jen; Gheen, Gregory O.

    1990-01-01

    Thin GaAs device integrated with other electronic and optoelectronic devices. Experiments show matrix.vector multiplication performed optically by four-wave mixing in thin crystal of GaAs. Concept applicable to thin crystals of other photorefractive materials having suitable electro-optical properties and same crystalline symmetry as that of GaAs.

  6. A Procedure for Thinning the Schedule of Time-Out

    ERIC Educational Resources Information Center

    Donaldson, Jeanne M.; Vollmer, Timothy R.

    2012-01-01

    Few studies have evaluated ways to thin punishment schedules. The purpose of this study was to examine the effects of using variable ratio (VR) schedules to thin the time-out schedule gradually. Warnings were used in some conditions to assist potentially with schedule thinning, but this analysis was limited. Participants were 3 young students who…

  7. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    SciTech Connect

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  8. Electrocaloric devices based on thin-film heat switches

    NASA Astrophysics Data System (ADS)

    Epstein, Richard I.; Malloy, Kevin J.

    2009-09-01

    We describe a new approach to refrigeration, heat pumping, and electrical generation that allows one to exploit the attractive properties of thin films of electrocaloric materials. Layers of electrocaloric material coupled with thin-film heat switches can work as either refrigerators and heat pumps or electrical generators, depending on the phasing of the applied voltages and heat switching. With heat switches based on thin layers of liquid crystals, the efficiency of electrocaloric thin-film devices can be at least as high as that of current thermoelectric devices. Advanced heat switches that may use carbon nanotubes would enable thin-film refrigerators and generators to outperform conventional vapor-compression devices.

  9. Method of transferring a thin crystalline semiconductor layer

    DOEpatents

    Nastasi, Michael A.; Shao, Lin; Theodore, N. David

    2006-12-26

    A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

  10. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  11. Thin Film Electrodes for Rare Event Detectors

    NASA Astrophysics Data System (ADS)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  12. Nanoindentation of GaSe thin films

    PubMed Central

    2012-01-01

    The structural and nanomechanical properties of GaSe thin films were investigated by means of X-ray diffraction (XRD) and nanoindentation techniques. The GaSe thin films were deposited on Si(111) substrates by pulsed laser deposition. XRD patterns reveal only the pure (000 l)-oriented reflections originating from the hexagonal GaSe phase and no trace of any impurity or additional phases. Nanoindentation results exhibit discontinuities (so-called multiple ‘pop-in’ events) in the loading segments of the load–displacement curves, and the continuous stiffness measurements indicate that the hardness and Young’s modulus of the hexagonal GaSe films are 1.8 ± 0.2 and 65.8 ± 5.6 GPa, respectively. PMID:22804961

  13. Dewetting of thin-film polymers.

    PubMed

    Saulnier, F; Raphaël, E; De Gennes, P-G

    2002-12-01

    In this paper we present a theoretical model for the dewetting of ultrathin polymer films. Assuming that the shear-thinning properties of these films can be described by a Cross-type constitutive equation, we analyze the front morphology of the dewetting film, and characterize the time evolution of the dry region radius, and of the rim height. Different regimes of growth are expected, depending on the initial film thickness, and on the power-law index involved in the constitutive equation. In the thin-films regime, the dry radius and the rim height obey power-law time dependences. We then compare our predictions with the experimental results obtained by Debrégeas et al. [Phys. Rev. Lett. 75, 3886 (1995)] and by Reiter [Phys. Rev. Lett. 87, 186101 (2001)].

  14. The thinning of viscous liquid threads.

    NASA Astrophysics Data System (ADS)

    Castrejon-Pita, J. Rafael; Castrejon-Pita, Alfonso A.; Hutchings, Ian M.

    2012-11-01

    The thinning neck of dripping droplets is studied experimentally for viscous Newtonian fluids. High speed imaging is used to measure the minimum neck diameter in terms of the time τ to breakup. Mixtures of water and glycerol with viscosities ranging from 20 to 363 mPa s are used to model the Newtonian behavior. The results show the transition from potential to inertial-viscous regimes occurs at the predicted values of ~Oh2. Before this transition the neck contraction rate follows the inviscid scaling law ~τ 2 / 3 . After the transition, the neck thinning tends towards the linear viscous scaling law ~ τ . Project supported by the EPSRC-UK (EP/G029458/1) and Cambridge-KACST.

  15. DNA strand patterns on aluminium thin films.

    PubMed

    Khatir, Nadia Mahmoudi; Banihashemian, Seyedeh Maryam; Periasamy, Vengadesh; Majid, Wan Haliza Abd; Rahman, Saadah Abdul; Shahhosseini, Fatemeh

    2011-01-01

    A new patterning method using Deoxyribose Nucleic Acid (DNA) strands capable of producing nanogaps of less than 100 nm is proposed and investigated in this work. DNA strands from Bosenbergia rotunda were used as the fundamental element in patterning DNA on thin films of aluminium (Al) metal without the need for any lithographic techniques. The DNA strands were applied in buffer solutions onto thin films of Al on silicon (Si) and the chemical interactions between the DNA strands and Al creates nanometer scale arbitrary patterning by direct transfer of the DNA strands onto the substrate. This simple and cost-effective method can be utilized in the fabrication of various components in electronic chips for microelectronics and Nano Electronic Mechanical System (NEMS) applications in general.

  16. MISSE 5 Thin Films Space Exposure Experiment

    NASA Technical Reports Server (NTRS)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  17. Method for casting thin metal objects

    DOEpatents

    Pehrson, Brandon P; Moore, Alan F

    2015-04-14

    Provided herein are various embodiments of systems for casting thin metal plates and sheets. Typical embodiments include layers of mold cavities that are oriented vertically for casting the metal plates. In some embodiments, the mold cavities include a beveled edge such that the plates that are cast have a beveled edge. In some embodiments, the mold cavities are filled with a molten metal through an open horizontal edge of the cavity. In some embodiments, the mold cavities are filled through one or more vertical feed orifices. Further disclosed are methods for forming a thin cast metal plate or sheet where the thickness of the cast part is in a range from 0.005 inches to 0.2 inches, and the surface area of the cast part is in a range from 16 square inches to 144 square inches.

  18. Plasmonics in Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Fahr, Stephan; Rockstuhl, Carsten; Lederer, Falk

    2009-10-01

    Thin film solar cells made of amorphous or microcrystalline silicon provide renewable energy at the benefits of low material consumption. As a drawback, these materials don't offer the high carrier mobilities of their crystalline counterpart. Due to low carrier mobilities, increased process times and material consumption, thick absorbing layers have to be avoided. For maintaining the absorption of the impinging light as high as possible, such thin film devices ask for photon management. Here we show how metallic nanoparticles that sustain the excitation of localized plasmon polaritons placed atop of the solar cell or in between two absorbing layers can increase the efficiency of solar cells. Numerical results for 1D as well as 2D periodic arrangements of nanoparticles will be shown.

  19. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  20. Robot strings: Long, thin continuum robots

    NASA Astrophysics Data System (ADS)

    Walker, I. D.

    We describe and discuss the development of long, thin, continuous “ string-like” robots aimed at Space exploration missions. These continuous backbone “ continuum” robots are inspired by numerous biological structures, particularly vines, worms, and the tongues of animals such as the anteater. The key novelty is the high length-to-diameter ratio of the robots. This morphology offers penetration into, and exploration of, significantly narrower and deeper environments than accessible using current robot technology. In this paper, we introduce new design alternatives for long thin continuum robots, based on an analysis and extension of three core existing continuum robot design types. The designs are evaluated based on their mechanical feasibility, structural properties, kinematic simplicity, and degrees of freedom.

  1. Impedance matched thin metamaterials make metals absorbing

    PubMed Central

    Mattiucci, N.; Bloemer, M. J.; Aközbek, N.; D'Aguanno, G.

    2013-01-01

    Metals are generally considered good reflectors over the entire electromagnetic spectrum up to their plasma frequency. Here we demonstrate an approach to tailor their absorbing characteristics based on the effective metamaterial properties of thin, periodic metallo-dielectric multilayers by exploiting a broadband, inherently non-resonant, surface impedance matching mechanism. Based on this mechanism, we design, fabricate and test omnidirectional, thin (<1 micron), polarization independent, extremely efficient absorbers (in principle being capable to reach A > 99%) over a frequency range spanning from the UV to the IR. Our approach opens new venues to design cost effective materials for many applications such as thermo-photovoltaic energy conversion devices, light harvesting for solar cells, flat panel display, infrared detectors, stray light reduction, stealth and others. PMID:24220284

  2. Adhesion and friction of thin metal films

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  3. Multiferroic oxide thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  4. Techniques for Connecting Superconducting Thin Films

    NASA Technical Reports Server (NTRS)

    Mester, John; Gwo, Dz-Hung

    2006-01-01

    Several improved techniques for connecting superconducting thin films on substrates have been developed. The techniques afford some versatility for tailoring the electronic and mechanical characteristics of junctions between superconductors in experimental electronic devices. The techniques are particularly useful for making superconducting or alternatively normally conductive junctions (e.g., Josephson junctions) between patterned superconducting thin films in order to exploit electron quantum-tunneling effects. The techniques are applicable to both low-Tc and high-Tc superconductors (where Tc represents the superconducting- transition temperature of a given material), offering different advantages for each. Most low-Tc superconductors are metallic, and heretofore, connections among them have been made by spot welding. Most high-Tc superconductors are nonmetallic and cannot be spot welded. These techniques offer alternatives to spot welding of most low-Tc superconductors and additional solutions to problems of connecting most high-Tc superconductors.

  5. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  6. Electrostatic Discharge Effects on Thin Film Resistors

    NASA Technical Reports Server (NTRS)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  7. Sprayed lanthanum doped zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  8. Thin Magnetically Soft Wires for Magnetic Microsensors

    PubMed Central

    Zhukova, Valentina; Ipatov, Mihail; Zhukov, Arcady

    2009-01-01

    Recent advances in technology involving magnetic materials require development of novel advanced magnetic materials with improved magnetic and magneto-transport properties and with reduced dimensionality. Therefore magnetic materials with outstanding magnetic characteristics and reduced dimensionality have recently gained much attention. Among these magnetic materials a family of thin wires with reduced geometrical dimensions (of order of 1–30 μm in diameter) have gained importance within the last few years. These thin wires combine excellent soft magnetic properties (with coercivities up to 4 A/m) with attractive magneto-transport properties (Giant Magneto-impedance effect, GMI, Giant Magneto-resistance effect, GMR) and an unusual re-magnetization process in positive magnetostriction compositions exhibiting quite fast domain wall propagation. In this paper we overview the magnetic and magneto-transport properties of these microwires that make them suitable for microsensor applications. PMID:22291562

  9. Thin sheets achieve optimal wrapping of liquids

    NASA Astrophysics Data System (ADS)

    Paulsen, Joseph; Démery, Vincent; Davidovitch, Benny; Santangelo, Christian; Russell, Thomas; Menon, Narayanan

    2015-03-01

    A liquid drop can wrap itself in a sheet using capillary forces [Py et al., PRL 98, 2007]. However, the efficiency of ``capillary origami'' at covering the surface of a drop is hampered by the mechanical cost of bending the sheet. Thinner sheets deform more readily by forming small-scale wrinkles and stress-focussing patterns, but it is unclear how coverage efficiency competes with mechanical cost as thickness is decreased, and what wrapping shapes will emerge. We place a thin (~ 100 nm) polymer film on a drop whose volume is gradually decreased so that the sheet covers an increasing fraction of its surface. The sheet exhibits a complex sequence of axisymmetric and polygonal partially- and fully- wrapped shapes. Remarkably, the progression appears independent of mechanical properties. The gross shape, which neglects small-scale features, is correctly predicted by a simple geometric approach wherein the exposed area is minimized. Thus, simply using a thin enough sheet results in maximal coverage.

  10. Method of casting silicon into thin sheets

    DOEpatents

    Sanjurjo, Angel; Rowcliffe, David J.; Bartlett, Robert W.

    1982-10-26

    Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.

  11. Spline Approximation of Thin Shell Dynamics

    NASA Technical Reports Server (NTRS)

    delRosario, R. C. H.; Smith, R. C.

    1996-01-01

    A spline-based method for approximating thin shell dynamics is presented here. While the method is developed in the context of the Donnell-Mushtari thin shell equations, it can be easily extended to the Byrne-Flugge-Lur'ye equations or other models for shells of revolution as warranted by applications. The primary requirements for the method include accuracy, flexibility and efficiency in smart material applications. To accomplish this, the method was designed to be flexible with regard to boundary conditions, material nonhomogeneities due to sensors and actuators, and inputs from smart material actuators such as piezoceramic patches. The accuracy of the method was also of primary concern, both to guarantee full resolution of structural dynamics and to facilitate the development of PDE-based controllers which ultimately require real-time implementation. Several numerical examples provide initial evidence demonstrating the efficacy of the method.

  12. Canonical acoustic thin-shell wormholes

    NASA Astrophysics Data System (ADS)

    Jusufi, Kimet; Övgün, Ali

    2017-03-01

    In this paper, we model a canonical acoustic thin-shell wormhole (CATSW) in the framework of analogue gravity systems. In this model, we apply cut and paste technique to join together two spherically symmetric, analogue canonical acoustic solutions, and compute the analogue surface density/surface pressure of the fluid using the Darmois-Israel formalism. We study the stability analyses by using a linear barotropic fluid (LBF), Chaplygin fluid (CF), logarithmic fluid (LogF), polytropic fluid (PF) and finally Van der Waals Quintessence (VDWQ). We show that a kind of analog acoustic fluid with negative energy is required at the throat to keep the wormhole stable. It is argued that CATSW can be a stabile thin-shell wormhole if we choose a suitable parameter values.

  13. [Utilization of compressed Chinese fir thinning wood].

    PubMed

    Chen, Ruiying; Wei, Ping; Liu, Jinghong

    2005-12-01

    With Chinese fir thinnings as raw material, and through measuring the physical-mechanical indices of its compressed wood, observing the variation of its microstructure and using IR analysis, an optimized technique of compressing Chinese fir thinnings was established. The technique was: compression ratio 50%-60%, thickness after compression 20 mm, moisture content before compression 50%, compressing time 20-30 minutes, and hot compressing temperature 180-200 degrees C. CH, an environmentally friendly cooking additive, had positive effects on softening the wood. During compressing, only the cells of fast-growing Chinese fir were extruded, their cavity became smaller, while the cell wall was not destroyed. The thickness reversion ratio of compressed wood was 2.68%, and its size stability and mechanical quality were as good as hardwoods (Betula lumninifera).

  14. Ultra-thin plasma radiation detector

    DOEpatents

    Friedman, Peter S.

    2017-01-24

    A position-sensitive ionizing-radiation counting detector includes a radiation detector gas chamber having at least one ultra-thin chamber window and an ultra-thin first substrate contained within the gas chamber. The detector further includes a second substrate generally parallel to and coupled to the first substrate and defining a gas gap between the first substrate and the second substrate. The detector further includes a discharge gas between the substrates and contained within the gas chamber, where the discharge gas is free to circulate within the gas chamber and between the first and second substrates at a given gas pressure. The detector further includes a first electrode coupled to one of the substrates and a second electrode electrically coupled to the first electrode. The detector further includes a first discharge event detector coupled to at least one of the electrodes for detecting a gas discharge counting event in the electrode.

  15. Thin Silicon MEMS Contact-Stress Sensor

    SciTech Connect

    Kotovsky, J; Tooker, A; Horsley, D

    2010-03-22

    This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

  16. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  17. Thin film strain gage development program

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.; Anderson, W. L.; Claing, R. G.

    1983-01-01

    Sputtered thin-film dynamic strain gages of 2 millimeter (0.08 in) gage length and 10 micrometer (0.0004 in) thickness were fabricated on turbojet engine blades and tested in a simulated compressor environment. Four designs were developed, two for service to 600 K (600 F) and two for service to 900 K (1200 F). The program included a detailed study of guidelines for formulating strain-gage alloys to achieve superior dynamic and static gage performance. The tests included gage factor, fatigue, temperature cycling, spin to 100,000 G, and erosion. Since the installations are 30 times thinner than conventional wire strain gage installations, and any alteration of the aerodynamic, thermal, or structural performance of the blade is correspondingly reduced, dynamic strain measurement accuracy higher than that attained with conventional gages is expected. The low profile and good adherence of the thin film elements is expected to result in improved durability over conventional gage elements in engine tests.

  18. Thin nearly wireless adaptive optical device

    NASA Technical Reports Server (NTRS)

    Knowles, Gareth J. (Inventor); Hughes, Eli (Inventor)

    2009-01-01

    A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

  19. Thin, nearly wireless adaptive optical device

    NASA Technical Reports Server (NTRS)

    Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

    2008-01-01

    A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

  20. Thin, nearly wireless adaptive optical device

    NASA Technical Reports Server (NTRS)

    Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

    2007-01-01

    A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.