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Sample records for cuin gase2 thin

  1. Cu(In, Ga)Se2 thin film solar cells grown at low temperatures

    NASA Astrophysics Data System (ADS)

    Zhang, W.; Zhu, H.; Zhang, L.; Guo, Y.; Niu, X.; Li, Z.; Chen, J.; Liu, Q.; Mai, Y.

    2017-06-01

    Cu(In, Ga)Se2 (CIGS) thin film solar cells were grown on polyimide (PI) and soda lime glass (SLG) substrates at low substrate temperatures between 400 °C and 500 °C. Different material properties of the CIGS thin films and photovoltaic performances of the solar cells were systematically investigated. It is found that the (112), (220)/(204) and (116)/(312) peaks from X-ray diffraction (XRD) patterns show double-peak patterns as the substrate temperature decreases. The CIGS thin films grown on both PI and SLG substrates shows layered structures. The bottom and surficial layers of CIGS thin films display small size polycrystalline grains while the middle layers show large size polycrystalline grains. Both types of CIGS thin film solar cells exhibit similar efficiencies while CIGS thin film solar cells grown on PI substrates show lower open circuit voltage and fill factor but higher short circuit current density, as compared to those of CIGS thin film solar cells on SLG substrates. The highest efficiency of 6.14% has been achieved for the CIGS thin film solar cells on PI with the structure of PI/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid here.

  2. Control of the thin film properties of Cu(In ,Ga)Se2 using water vapor introduction during growth

    NASA Astrophysics Data System (ADS)

    Ishizuka, Shogo; Shibata, Hajime; Yamada, Akimasa; Fons, Paul; Sakurai, Keiichiro; Matsubara, Koji; Niki, Shigeru; Yonemura, Minoru; Nakanishi, Hisayuki

    2006-11-01

    The effects of water vapor introduction during growth on Cu(In ,Ga)Se2 (CIGSe) thin film properties, specifically the electrical and photoluminescence (PL) properties have been studied. Increases in the hole carrier density and conductivity with water vapor introduction were observed for all [Ga]/[In+Ga] composition ratios. The PL spectra observed from CuGaSe2 (CGSe) showed an annihilation of deep donor-acceptor pair emissions related to Se vacancies with water vapor introduction. In addition, the Na content in the CIGSe layers as well as the O content was found to increase. These results suggest that the mechanism behind the variation observed in the electrical and PL properties and consequent cell improvement is largely attributable to a decrease in the Se-vacancies-induced donor defect density and an enhancement of Na effects.

  3. Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In, Ga)Se2 thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Lu, Ming; Xu, Jing; Huang, Jian-Wei

    2016-09-01

    The lowest energies which make Cu, In, Ga, and Se atoms composing Cu(In, Ga)Se2 (CIGS) material displaced from their lattice sites are evaluated, respectively. The non-ionizing energy loss (NIEL) for electron in CIGS material is calculated analytically using the Mott differential cross section. The relation of the introduction rate (k) of the recombination centers to NIEL is modified, then the values of k at different electron energies are calculated. Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers. The validity of the modeling approach is verified by comparison with the experimental data. Project supported by the National Natural Science Foundation of China (Grant No. 11547151).

  4. Effect of impurities in the CdS buffer layer on the performance of the Cu(In, Ga)Se2 thin film solar cell

    NASA Astrophysics Data System (ADS)

    Kylner, A.

    1999-05-01

    The highest efficiencies of Cu(In, Ga)Se2 (CIGS) thin film solar cells have been achieved when incorporating a thin CdS buffer layer grown by chemical bath deposition (CBD). The reason for this success has recently been discussed in terms of a pure Cd-doping effect in the CIGS layer. Such a model suggests that the bulk properties of the CBD-CdS buffer layer would be of minor importance. In this work, CBD-CdS layers having different bulk properties (i.e., concentrations of incorporated impurities) were employed in a number of CIGS solar cells. To further explore the bulk versus interface properties, half of these CIGS devices were subjected to a pre-deposition of an additional intermediate ultrathin layer. Moreover, CIGS devices made with CBD-CdS layers of different thickness were fabricated. Both standard and temperature dependent current-voltage (I-V) measurements were performed. The results indicate that the bulk properties of the CBD-CdS buffer layer indeed play an important role in the formation of the CdS/CIGS heterojunction. By increasing the impurity concentration or the thickness of the CBD-CdS layer, the open-circuit voltage Voc was observed to substantially increase. This favorable effect was counteracted by the appearance of a crossover effect in the I-V characteristics for devices with the highest impurity concentration or thickness of the CBD-CdS layer. The pre-deposition of an ultrathin layer did not affect these results. The presence of the crossover effect was strongly correlated to the appearance of trap-assisted tunneling in addition to the thermally assisted tunneling. The observed crossover effect was suggested to originate from too high a number of impurities (defect states) in the bulk of the CdS layer.

  5. Interface reactions and Kirkendall voids in metal organic vapor-phase epitaxy grown Cu(In ,Ga)Se2 thin films on GaAs

    NASA Astrophysics Data System (ADS)

    Lei, C. H.; Rockett, A. A.; Robertson, I. M.; Papathanasiou, N.; Siebentritt, S.

    2006-12-01

    Cu(In1-xGax)Se2 (CIGS) films were grown on (001) GaAs at 570 or 500°C by means of metal organic vapor-phase epitaxy. All films were Cu-rich [Cu /(In+Ga)>1] with pseudomorphic Cu2Se second phase particles found only on the growth surface. During growth, diffusion of Ga from the substrate and vacancies generated by the formation of CIGS from Cu2Se at the surface occurred. The diffusion processes lead to the formation of Kirkendall voids at the GaAs/CIGS interface. Transmission electron microscopy and nanoprobe energy dispersive spectroscopy were used to analyze the diffusion and void formation processes. The diffusivity of Ga in CIGS was found to be relatively low. This is postulated to be due to a comparatively low concentration of point defects in the epitaxial films. A reaction model explaining the observed profiles and voids is proposed.

  6. Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films.

    PubMed

    Nicoara, N; Lepetit, Th; Arzel, L; Harel, S; Barreau, N; Sadewasser, S

    2017-01-27

    Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT.

  7. Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films

    PubMed Central

    Nicoara, N.; Lepetit, Th.; Arzel, L.; Harel, S.; Barreau, N.; Sadewasser, S.

    2017-01-01

    Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT. PMID:28128351

  8. Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Nicoara, N.; Lepetit, Th.; Arzel, L.; Harel, S.; Barreau, N.; Sadewasser, S.

    2017-01-01

    Significant power conversion efficiency improvements have recently been achieved for thin-film solar cells based on a variety of polycrystalline absorbers, including perovskites, CdTe, and Cu(In,Ga)Se2 (CIGS). The passivation of grain boundaries (GBs) through (post-deposition) treatments is a crucial step for this success. For the case of CIGS, the introduction of a potassium fluoride post-deposition treatment (KF-PDT) has boosted their power conversion efficiency to the best performance of all polycrystalline solar cells. Direct and indirect effects of potassium at the interface and interface-near region in the CIGS layer are thought to be responsible for this improvement. Here, we show that also the electronic properties of the GBs are beneficially modified by the KF-PDT. We used Kelvin probe force microscopy to study the effect of the KF-PDT on the CIGS surface by spatially resolved imaging of the surface potential. We find a clear difference for the GB electronic properties: the KF-PDT increases the band bending at GBs by about 70% and results in a narrower distribution of work function values at the GBs. This effect of the KF-PDT on the GB electronic properties is expected to contribute to the improved efficiency values observed for CIGS thin-film solar cells with KF-PDT.

  9. Optimizing Ga-profiles for highly efficient Cu(In, Ga)Se2 thin film solar cells in simple and complex defect models

    NASA Astrophysics Data System (ADS)

    Frisk, C.; Platzer-Björkman, C.; Olsson, J.; Szaniawski, P.; Wätjen, J. T.; Fjällström, V.; Salomé, P.; Edoff, M.

    2014-12-01

    Highly efficient Cu(In,Ga)(S,Se)2 photovoltaic thin film solar cells often have a compositional variation of Ga to In in the absorber layer, here described as a Ga-profile. In this work, we have studied the role of Ga-profiles in four different models based on input data from electrical and optical characterizations of an in-house state-of-the-art Cu(In,Ga)Se2 (CIGS) solar cell with power conversion efficiency above 19%. A simple defect model with mid-gap defects in the absorber layer was compared with models with Ga-dependent defect concentrations and amphoteric defects. In these models, optimized single-graded Ga-profiles have been compared with optimized double-graded Ga-profiles. It was found that the defect concentration for effective Shockley-Read-Hall recombination is low for high efficiency CIGS devices and that the doping concentration of the absorber layer, chosen according to the defect model, is paramount when optimizing Ga-profiles. For optimized single-graded Ga-profiles, the simulated power conversion efficiency (depending on the model) is 20.5-20.8%, and the equivalent double-graded Ga-profiles yield 20.6-21.4%, indicating that the bandgap engineering of the CIGS device structure can lead to improvements in efficiency. Apart from the effects of increased doping in the complex defect models, the results are similar when comparing the complex defect models to the simple defect models.

  10. Substrate temperature optimization for Cu(In, Ga)Se2 solar cells on flexible stainless steels

    NASA Astrophysics Data System (ADS)

    Liang, X.; Zhu, H.; Chen, J.; Zhou, D.; Zhang, C.; Guo, Y.; Niu, X.; Li, Z.; Mai, Y.

    2016-04-01

    Cu(In, Ga)Se2 (CIGS) thin films are deposited on flexible stainless steel (SS) substrates using the so called 3-stage co-evaporation process at different substrate temperatures ranging from 440 °C to 640 °C during the 2nd stage and the 3rd stage (TS2). The effects of TS2 on the properties of CIGS thin films are systematically investigated. It is found by secondary ion mass spectrometry measurement that CIGS thin films deposited at different TS2 show different Ga/(Ga + In) ratio (GGI) profiles along the growth direction. High TS2 facilitates the grain growth and leads to larger grain size. However, high TS2 worsens the spectral response of CIGS solar cells in the long wavelength range, which is partly attributed to the too much iron atom diffusion from the SS substrates into the CIGS thin films. All CIGS thin films show (112) preferred orientations with a shift to higher angle due to variation of compositions. A shoulder-like two-peak structure of (112) and (220/204) peaks appears for CIGS thin films deposited at lower TS2. Conversion efficiency of 11.3% is obtained for CIGS thin film solar cells deposited at the TS2 of 500 °C.

  11. Detection of Matrix Elements and Trace Impurities in Cu(In, Ga)Se2 Photovoltaic Absorbers Using Surface Analytical Techniques.

    PubMed

    Kim, Min Jung; Lee, Jihye; Kim, Seon Hee; Kim, Haidong; Lee, Kang-Bong; Lee, Yeonhee

    2015-10-01

    Chalcopyrite Cu(In, Ga)Se2 (CIGS) thin films are well known as the next-generation solar cell materials notable for their high absorption coefficient for solar radiation, suitable band gap, and ability for deposition on flexible substrate materials, allowing the production of highly flexible and lightweight solar panels. To improve solar cell performances, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is much needed. In this study, Cu(In, Ga)Se2 thin films were prepared on molybdenum back contacts deposited on soda-lime glass substrates via three-stage evaporation. Surface analyses via AES and SIMS were used to characterize the CIGS thin films and compare their depth profiles. We determined the average concentration of the matrix elements, Cu, In, Ga, and Se, using ICP-AES, XRF, and EPMA. We also obtained depth profiling results using TOF-SIMS, magnetic sector SIMS and AES, and APT, a sub-nanometer resolution characterization technique that enables three-dimensional elemental mapping. The SIMS technique, with its high detection limit and ability to obtain the profiles of elements in parallel, is a powerful tool for monitoring trace elements in CIGS thin films. To identify impurities in a CIGS layer, the distribution of trace elements was also observed according to depth by SIMS and APT.

  12. Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se2 solar modules

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaobo; Cheng, Tzu-Huan; Liu, Chee Wee

    2016-07-01

    The fluctuation of Ga content and absorption layer thickness of Cu(In, Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numerical simulation. The band gap of CIGS is increased by the increasing Ga content, and the residual compressive strain. Strain effect worsens the degradation of the power conversion efficiency of CIGS module in addition to Ga fluctuation. The intracell Ga fluctuation degrades the open circuit voltage due to the minimum open circuit voltage in the parallel configuration, and also affects the short circuit current due to the Ga-dependent light absorption. The intercell Ga fluctuation leads to a more significant degradation for CIGS solar module efficiency than the intracell Ga fluctuation due to the additional degradation of the fill factor. The thickness fluctuation has a small effect on open circuit voltage, but causes strong degradation of short circuit current and fill factor, which leads to a more significant degradation on power conversion efficiency than Ga fluctuation to the same fluctuation percentage. In reality, the thickness can be tightly controlled within the fluctuation of 5% or less. [Figure not available: see fulltext.

  13. Synthesis and characterization of Cu(In, Ga)Se2 absorption/scattering layers by electrodeposition method

    NASA Astrophysics Data System (ADS)

    Jeong, Soochang; Choi, Hyonkwang; Hwang, Junghwan; Park, Juntae; Im, Ki Hong; Jung, Yongil; Jeon, Minhyon

    2013-11-01

    We propose a Cu(In, Ga)Se2 double absorption layer structure with both absorption and scattering effects. We synthesized CIGS absorption layers by electro-deposition using different electrical potentials. Structural properties were characterized by x-ray diffraction and field-emission scanning electron microscopy. Optical properties were measured using UV/VIS spectrometry. Grain size and surface roughness were controlled by manipulation of the electrical potential. From these results, the currently typical, single CIGS absorption layer, was replaced with two CIGS layers: a top CIGS layer of smaller grain size and a bottom CIGS layer of larger grain size. We found that the larger-grain CIGS layer provides better scattering effect, so that the CIGS double layer structure provides enhanced light absorption performance in visible light. By applying this new CIGS double layer structure, it is expected that conversion efficiency will be increased.

  14. Optoelectronic Investigation of Sb-Doped Cu(In, Ga)Se2

    SciTech Connect

    Mansfield, Lorelle M.; Kuciauskas, Darius; Dippo, Patricia; Li, Jian V.; Bowers, Karen; To, Bobby; DeHart, Clay; Ramanathan, Kannan

    2015-06-14

    Doping Cu(In,Ga)Se2 (CIGS) thin films with Sb can provide large grains at lower processing temperatures than are normally required. In this study, we incorporated Sb into the precursor of a two-step selenization process. We saw enhanced grain size and improved device performance compared to similarly processed CIGS films made without Sb. The optoelectronic properties of the Sb-doped CIGS films were examined with photoluminescence (PL) and admittance spectroscopy. These techniques allowed us to evaluate the origin of a lower-energy PL peak that is not typically seen in CIGS.

  15. Deposition and characterization of CuInS2 thin films deposited over copper thin films

    NASA Astrophysics Data System (ADS)

    Thomas, Titu; Kumar, K. Rajeev; Kartha, C. Sudha; Vijayakumar, K. P.

    2015-06-01

    Simple, cost effective and versatile spray pyrolysis method is effectively combined with vacuum evaporation for the deposition of CuIns2 thin films for photovoltaic applications. In the present study In2s3 was spray deposited over vacuum evaporated Cu thin films and Cu was allowed to diffuse in to the In2S3 layer to form CuInS2. To analyse the dependence of precursor volume on the formation of CuInS2 films structural, electrical and morphological analzes are carried out. Successful deposition of CuInS2thin films with good crystallinity and morphology with considerably low resistivity is reported in this paper.

  16. Optimization of Post-selenization Process of Co-sputtered CuIn and CuGa Precursor for 11.19% Efficiency Cu(In, Ga)Se2 Solar Cells

    NASA Astrophysics Data System (ADS)

    Cheng, Ke; Han, Kaikai; Kuang, Zhongcheng; Jin, Ranran; Hu, Junxia; Guo, Longfei; Liu, Ya; Lu, Zhangbo; Du, Zuliang

    2017-04-01

    In this work, CuInGa alloy precursor films are fabricated by co-sputtering of CuIn and CuGa targets simultaneously. After selenization in a tube-type rapid thermal annealing system under a Se atmosphere, the Cu(In, Ga)Se2 (CIGS) absorber layers are obtained. Standard soda lime glass (SLG)/Mo/CIGS/CdS/i-ZnO/ITO/Ag grid structural solar cells are fabricated based on the selenized CIGS absorbers. The influences of selenization temperatures on the composition, crystallinity, and device performances are systematically investigated by x-ray energy dispersive spectroscopy, x-ray diffraction, Raman spectroscopy, and the current density-voltage ( J- V) measurement. It is found that the elemental ratio of Cu/(In + Ga) strongly depends on the selenization temperatures. Because of the appropriate elemental ratio, a 9.92% conversion efficiency is reached for the CIGS absorber selenized at 560°C. After the additional optimization by pre-annealing treatment at 280°C before the selenization, a highest conversion efficiency of 11.19% with a open-circuit ( V oc) of 456 mV, a short-circuit ( J sc) of 40.357 mA/cm2 and a fill factor of 60.82% without antireflection coating has been achieved. Above 13% efficiency improvement was achievable. Our experimental findings presented in this work demonstrate that the post-selenization of co-sputtered CuIn and CuGa precursor is a promising way to fabricate high quality CIGS absorbers.

  17. Synchrotron X-Ray Characterization of Alkali Elements at Grain Boundaries in Cu(In, Ga)Se2 Solar Cells

    SciTech Connect

    West, Bradley; Stuckelberger, Michael; Guthrey, Harvey; Chen, Lei; Lai, Barry; Maser, Jorg; Rose, Volker; Dynes, James J.; Shafarman, William; Al-Jassim, Mowafak; Bertoni, Mariana I.

    2016-11-21

    It is well known that the addition of alkali elements such as Na and K during and after growth of Cu(In, Ga)Se2 (CIGS) has beneficial effects on the electronic properties of bulk material, improving device performance significantly. While the device level effects have been measured and reported, a direct observations of the localization of Na including its chemical nature are missing, and the impact of Na on elemental and phase segregation during CIGS growth is not fully understood. We investigate these aspects to shine light on the role of Na in CIGS solar cells with the ultimate goal of increasing their conversion efficiency. Utilizing a suite of synchrotron based x-ray characterization techniques, we discuss the challenges and advantages of these techniques for investigating segregation of main constituents of CIGS, Na distribution, chemical bonding of Na, and collection efficiency in CIGS as well as their correlations.

  18. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy

    NASA Astrophysics Data System (ADS)

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-12-01

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.

  19. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy

    PubMed Central

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-01-01

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells. PMID:26679958

  20. Determination of the Electrical Junction in Cu(In, Ga)Se2 and Cu2ZnSnSe4 Solar Cells with 20-nm Spatial Resolution

    SciTech Connect

    Xiao, Chuanxiao; Jiang, Chun-Sheng; Moutinho, Helio; Levi, Dean; Yan, Yanfa; Gorman, Brian; Al-Jassim, Mowafak

    2016-11-21

    We located the electrical junction (EJ) of Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnSe4 (CZTS) solar cells with ~20-nm accuracy using a scanning capacitance spectroscopy (SCS) technique. A procedure was developed to prepare the cross-sectional samples and grow critical high-quality insulating layers for the SCS measurement. We found that CIGS has a buried homojunction with the EJ located at ~40 nm inside the CIGS/CdS interface. An n-type CIGS was probed in the region 10-30 nm away from the interface. By contrast, the CZTS/CdS cells have a heterointerface junction with a shallower EJ (~20 nm) than CIGS. The EJ is ~20 nm from the CZTS/CdS interface, which is consistent with asymmetrical carrier concentrations of the p-CZTS and n-CdS in a heterojunction cell. The unambiguous determination of the junction locations helped explain the large open circuit voltage difference between the state-of-the-art devices of CIGS and CZTS.

  1. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy.

    PubMed

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-12-18

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.

  2. Physical Vapor Deposition of Hexagonal and Tetragonal CuIn5Se8 Thin Films

    NASA Astrophysics Data System (ADS)

    Kohara, Naoki; Nishiawaki, Shiro; Negami, Takayuki; Wada, Takahiro

    2000-11-01

    Hexagonal and tetragonal CuIn5Se8 thin films have been successfully prepared by physical vapor deposition. A hexagonal CuIn5Se8 thin film was obtained via the reaction of (Cu+Se) and (In+Se) layers. This hexagonal film had a layered structure with a lattice spacing of approximately 16 Å, corresponding to fivefold close-packed stacking of Se. With an alternative deposition process using (CuInSe2) and (In2Se3) layers, a tetragonal CuIn5Se8 thin film was obtained. The tetragonal film had a columnar structure with a lattice spacing of 3.3 Å, corresponding to the cubic close-packed stacking of Se. As evident from examination of the Cu2Se-In2Se3 pseudo-binary system phase diagram, hexagonal CuIn5Se8 is a stable phase and tetragonal CuIn5Se8 is metastable. The growth mechanism of the hexagonal and tetragonal phase CuIn5Se8 thin films is discussed from a crystallographic point of view.

  3. Experimental and theoretical investigations of cadmium diffusion in vacancy-rich Cu(In, Ga)Se2 material

    NASA Astrophysics Data System (ADS)

    Biderman, Norbert J.

    Copper indium gallium selenide (Cu(In,Ga)Se2 or CIGS) has become a significant topic of research and development for photovoltaic application. CIGS photovoltaic devices have demonstrated record conversion efficiencies however are still below the maximum solar conversion efficiency. Losses in performance have been attributed structural defects including vacancies, doping, grain boundaries, and compositional non-uniformity that are poorly understood and controlled. The cadmium sulfide (CdS) buffer layer plays a critical role in high-performance CIGS photovoltaic devices, serving as the n-type component of the p-n junction formed with the p-type CIGS absorber layer. Cadmium diffusion into the CIGS surface during CdS deposition creates a buried p-n homojunction in addition to the CIGS/CdS p-n heterojunction. CdS is believed to assist in reducing carrier recombination at the CIGS/CdS interface, an important attribute of high-efficiency solar cells. In the present work, cadmium diffusion mechanisms in CIGS are experimentally investigated via secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). Two cadmium diffusion profiles with distinct Arrhenius diffusion kinetics within a single depth profile of the CIGS thin film are observed with SIMS and AES: an intense first-stage diffusion profile directly below the CIGS/CdS interface and a long-range, second-stage diffusion profile that extends deep into the thin film. Cadmium grain boundary diffusion is also detected in fine-grain CIGS samples. These multiple diffusion processes are quantified in the present work, and the two-stage cadmium diffusion profiles suggest distinctive lattice diffusion mechanisms. Calculations and modeling of general impurity diffusion via interstitial sites in CIGS are also conducted via numerical including cadmium, iron, and zinc. In the numerical simulations, the standard diffusion-reaction kinetics theory is extended to vacancy-rich materials like CIGS that contain 1 at

  4. Structural, optical and electrical properties of CuInS2 thin films prepared by chemical spray pyrolysis

    NASA Astrophysics Data System (ADS)

    Terasako, Tomoaki; Uno, Yuji; Inoue, Seiki; Kariya, Tetsuya; Shirakata, Sho

    2006-09-01

    Polycrystalline CuInS2 thin films were prepared by chemical spray pyrolisis (CSP) on glass sustrate from the ethanol aqueous solution containing CuCl2, InCl3 and thiourea. Structual, electrical and optical properties were systematically studied in terms of substrate temperature, pH and the ion ratio (Cu/In) of the spray solution. Although the In-rich films were composed of CuInS2 and In2S3, the In2S3 content in the film decreased with Cu/In ratio. Appearance of Raman peaks at 288 and 298 cm-1 indicated that the films contained CuInS2 with chalcopyrite and CuAu phases. Typical grain size in the Cu-rich films was 200 nm. Optical gap energies were approximately 0.1-0.2eV smaller than the bandgap energy of the CuInS2 bulk crystal. Resisitivity of the Cu-rich films without In2S3 secondary phase was 0.2-5 cm.

  5. Thin Film CuInS2 Prepared by Spray Pyrolysis with Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Cowen, Jonathan E.; Hepp, Aloysius F.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.

  6. Synthesis of CuInS2 thin films by spray pyrolysis deposition system

    NASA Astrophysics Data System (ADS)

    Hussain, K. M. A.; Podder, J.; Saha, D. K.

    2013-02-01

    Copper indium disulfide (CuInS2) thin films were deposited on the glass substrate by the locally made spray pyrolysis deposition system. The films were characterized by using energy dispersive analytical X-ray (EDAX) spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-VIS-NIR spectrophotometry. The XRD pattern indicated that the prepared CuInS2 thin films are chalcopyrite structure. Lattice parameters and FWHM values were verified by the standard values of JCPDS 270159 file. The EDAX analysis indicated the stoichiometric ratio of 1.14:1:1.88 (CIS-2) thin films. The SEM analysis showed that the average grain size of the film was 100-800 nm and that of XRD data indicate the values of 30-50 nm. The high absorption co-efficient and 1.48 eV band gap of the films indicate that the films are useful as an absorber for photovoltaic application in the solar cell.

  7. Surface modifications of chalcopyrite CuInS2 thin films for photochatodes in photoelectrochemical water splitting under sunlight irradiation

    NASA Astrophysics Data System (ADS)

    Gunawan; Haris, A.; Widiyandari, H.; Septina, W.; Ikeda, S.

    2017-02-01

    Copper chalcopyrite semiconductors include a wide range of compounds that are of interest for photoelectrochemical water splitting which enables them to be used as photochatodes for H2 generation. Among them, CuInS2 is one of the most important materials due to its optimum band gap energy for sunlight absorption. In the present study, we investigated the application of CuInS2 fabricated by electrodeposition as photochatodes for water splitting. Thin film of CuInS2 chalcopyrite was formed on Mo-coated glass substrate by stacked electrodeposition of copper and indium followed by sulfurization under H2S flow. The films worked as a H2 liberation electrode under cathodic polarization from a solution containing Na2SO4 after loading Pt deposits on the film. Introduction of an n-type CdS layer by chemical bath deposition on the CuInS2 surface before the Pt loading resulted appreciable improvements of H2 liberation efficiency and a higher photocurrent onset potential. Moreover, the use of In2S3 layer as an alternative n-type layer to the CdS significantly improved the H2 liberation performance: the CuInS2 film modified with In2S3 and Pt deposits worked as an efficient photocathode for photoelectrochemical water splitting.

  8. Selenization of metallic Cu-In thin films for CuInSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Szot, Jozef; Prinz, Uwe

    1989-12-01

    A new approach for formation of photovoltaic CuInSe2 films by chalcogenization of Cu-In multilayers with a thin selenium layer and subsequent heat treatments is presented. Morphological, compositional, and structural properties of films along with aspects of various processing conditions are discussed. The possibility of obtaining perfectly homogeneous chalcopyrite ternary films was affected by composition deviations from stoichiometry, although films obtained in a modified two-stage heat treatment processing were of good structural and photovoltaic quality. Heterojunctions with (Zn, Cd)S as window material showed efficiencies better than 5%, mainly limited by low open-circuit voltage and poor fill factor. Short-circuit currents were comparable to CuInSe2-based cells fabricated by multiple-source evaporation.

  9. Synthesis of nanostructured CuInS2 thin films and their application in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Luo, Fazhi; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang; Liu, Jun

    2016-03-01

    CuInS2 (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of "nanosheet array" and "flower-like microsphere" were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS2 nanostructure competitive as counter electrode in DSSCs.

  10. Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.

    PubMed

    Sun, Qian; Kim, Kyoung-Bo; Jeon, Chan-Wook

    2016-05-01

    Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias.

  11. Investigation of Sb-Containing Precursors for Cu(In, Ga)Se2 Thin Films Through Design of Experiments

    SciTech Connect

    Mansfield, Lorelle M.; To, Bobby; Reedy, Robert C.; Young, Matthew R.; Bowers, Karen; Ramanathan, Kannan

    2016-11-21

    The Design of Experiments (DoE) module in JMP statistical software was used to determine the best parameters for Sb-containing CIGS precursors with a fixed selenization step. Solar cells were fabricated and measured for all completed films. The most important factor influencing the current-voltage device parameters was identified as the temperature and antimony flux interaction. The DoE prediction profiler and predictive contour plots provided guidance to further improve the device parameters. In one follow-up run, we increased device efficiency from 14.9% to 15.5% Additional gains in efficiency to 16.9% were realized by introducing an intentional Ga gradient and an antireflective coating.

  12. CuInS 2 thin films obtained through the annealing of chemically deposited In 2S 3-CuS thin films

    NASA Astrophysics Data System (ADS)

    Peña, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vázquez, A.; Gómez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2S 3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  13. Deposition of ultra thin CuInS2 absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C)

    NASA Astrophysics Data System (ADS)

    Schneider, Nathanaelle; Bouttemy, Muriel; Genevée, Pascal; Lincot, Daniel; Donsanti, Frédérique

    2015-02-01

    Two new processes for the atomic layer deposition of copper indium sulfide (CuInS2) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl3) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS2 stoechiometry was only achieved by depositing In2S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)2, In(acac)3) allows the direct deposition of CuInS2 at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.

  14. Structural and morphological characterization of ternary nanocrystalline Cu-In-S thin films prepared by laser ablation

    NASA Astrophysics Data System (ADS)

    Bineva, I.; Pejova, B.; Mihailov, V.; Dinescu, A.; Danila, M.; Karatodorov, S.

    2017-01-01

    Thin nanocrystalline Cu-In-S films are prepared by pulsed laser ablation in vacuum with Nd:YAG laser operating at 1064 nm on Si (100) substrates. As a target, a CuInS2 quantum dots powder, synthesized by sonochemical template-free colloidal approach and pressed to form a pellet is used. The structure and morphology of the deposited films were studied employing X-ray diffraction, scanning electron microscopy, and atomic force microscopy techniques. The analysis of the deposited thin films revealed predominant cubic Cu1.7In0.05S phase. It has been found that deposited films were nanocrystalline. The effect of laser pulse energy and deposition time on the structure and morphology of as-prepared films is studied. Slight mean diameter increase from 8 nm to 13 nm with deposition time and applied power was observed, as the time dependence is more pronounced. On the contrary, six fold increase from 7.4 to 44.3 nm of the surface root mean square roughness was estimated with augmentation of the applied laser pulse energy.

  15. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  16. Composition Control of CuInSe2 Thin Films Using Cu/In Stacked Structure in Coulometric Controlled Electrodeposition Process.

    PubMed

    Kwon, Yong Hun; Do, Hyun Woo; Kim, Hyoungsub; Cho, Hyung Koun

    2015-10-01

    Cu/In bi-metal stacked structures were prepared on Mo coated soda lime glass substrates using electrodeposition method. These metallic precursors were selenized at 550 °C for 60 min to synthesize the CuInSe2 (CIS) thin films in a thermal evaporator chamber with an Se overpressure atmosphere. The composition ratios of CIS thin films were systematically controlled using the coulometric method of the electrodeposition, where the accumulated coulomb of In layers was varied from 1062 to 6375 mC/cm2. As a result, the stoichiometric CIS film was obtained in the Cu/In coulomb ratio of 0.6. Highly crystallized CIS films were produced from the liquid Cu-Se phase in the Cu/In coulomb ratio of ≥0.6. In contrast, the crystallinity and grain size were degraded in the In-rich region. We found that the Cu/In composition ratio of CIS films was linearly proportional to the precursor thickness determined by the coulomb ratio.

  17. Photon induced facile synthesis and growth of CuInS2 absorber thin film for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Singh, Manjeet; Jiu, Jinting; Suganuma, Katsuaki

    2016-04-01

    In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS2 (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In2S3 to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm2 is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

  18. Selenization of metallic Cu-In thin films for CuInSe sub 2 solar cells

    SciTech Connect

    Szot, J.; Prinz, U. )

    1989-12-15

    A new approach for formation of photovoltaic CuInSe{sub 2} films by chalcogenization of Cu-In multilayers with a thin selenium layer and subsequent heat treatments is presented. Morphological, compositional, and structural properties of films along with aspects of various processing conditions are discussed. The possibility of obtaining perfectly homogeneous chalcopyrite ternary films was affected by composition deviations from stoichiometry, although films obtained in a modified two-stage heat treatment processing were of good structural and photovoltaic quality. Heterojunctions with (Zn, Cd)S as window material showed efficiencies better than 5%, mainly limited by low open-circuit voltage and poor fill factor. Short-circuit currents were comparable to CuInSe{sub 2}-based cells fabricated by multiple-source evaporation.

  19. X-ray photoelectron spectroscopy method for obtaining a CuIn0.95Ga0.05Se2 thin film: development of technology and a phase composition studying

    NASA Astrophysics Data System (ADS)

    Kalazhokov, Kh Kh; Kalazhokov, Z. Kh; Gadjiev, T. M.; Aliev, M. A.; Ismailov, A. M.; Gadjieva, R. M.; Asvarov, A. Sh; Arslanov, R. K.; Kozyrev, E. N.; Filonenko, V. I.; Askerov, R. O.

    2017-07-01

    A technology of two stage selenezation method in the carrier gas (nitrogen) stream of the reaction component (selenium) has been suggested for the CuIn0.95Ga0.05Se2 thin film growing. Morphology and structure of the CuIn0.95Ga0.05Se2 film have been studied by SEM and XRD methods. Phase compound of film material for the CuIn0.95Ga0.05Se2 semiconductor solution has been studied by X-ray photoelectron spectroscopy method.

  20. Surface modifications of Cu(In ,Ga)S2 thin film solar cell absorbers by KCN and H2O2/H2SO4 treatments

    NASA Astrophysics Data System (ADS)

    Weinhardt, L.; Fuchs, O.; Groß, D.; Umbach, E.; Heske, C.; Dhere, N. G.; Kadam, A. A.; Kulkarni, S. S.

    2006-07-01

    KCN etching of the CuxS surface layer formed during the production process of Cu(In ,Ga)S2 thin film solar cell absorbers as well as subsequent H2O2/H2SO4 etching of the Cu(In ,Ga)S2 surface have been investigated using x-ray photoelectron spectroscopy, x-ray excited Auger electron spectroscopy, and x-ray emission spectroscopy. We find that the KCN etching removes the CuxS layer—being identified as Cu2S—and that there is K deposited during this step, which is removed by the subsequent H2O2/H2SO4 oxidation treatment. When a CdS buffer layer is deposited on the absorber directly after KCN etching, a K compound (KCO3) is observed at the CdS surface.

  1. High efficiency thin-film CuIn1-xGaxSe2 photovoltaic cells using a Cd1-xZnxS buffer layer

    NASA Astrophysics Data System (ADS)

    Bhattacharya, R. N.; Contreras, M. A.; Egaas, B.; Noufi, R. N.; Kanevce, A.; Sites, J. R.

    2006-12-01

    The authors have fabricated 19.52% thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices using single layer chemical bath deposited Cd1-xZnxS (CdZnS) buffer layer. The efficiency equals the world record for any thin-film solar cell and is achieved with reduced optical absorption in the window layer. Using current-voltage, quantum efficiency, and capacitance-voltage measurements, the CIGS/CdZnS device parameters are directly compared with those of CIGS/CdS devices fabricated with equivalent absorbers.

  2. Rapid growth of nanocrystalline CuInS 2 thin films in alkaline medium at room temperature

    NASA Astrophysics Data System (ADS)

    Roh, Seung Jae; Mane, Rajaram S.; Pathan, Habib M.; Joo, Oh-Shim; Han, Sung-Hwan

    2005-12-01

    Layer-by-layer (LbL) deposition of CuInS 2 (CIS) thin films at room temperature (25 °C) from alkaline CuSO 4 + In 2(SO 4) 3 and Na 2S precursor solutions was reported. The method allowed self-limited growth of CIS films with nanocrystalline structure and composed of densely packed nanometer-sized grains. The as-deposited CIS film was 250 nm thick and composed of closely packed particles of 20-30 nm in diameter. The alkaline cationic precursor solution was obtained by dissolving CuSO 4 and InSO 4 in deionized water with a appropriate amount of hydrazine monohydrate (H-H) and 2,2',2″-nitrilotriethanol (TEA). CIS films were annealed at 200 °C for 2 h and effect of annealing on structural, optical, and surface morphological properties was thoroughly investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, UV-vis spectrometer, C-V, and water contact angle techniques, respectively.

  3. Cationic compositional optimization of CuIn(S1-ySey)2 ultra-thin layers obtained by chemical bath deposition

    NASA Astrophysics Data System (ADS)

    Lugo, S.; Sánchez, Y.; Espíndola, M.; Oliva, F.; Izquierdo-Roca, V.; Peña, Y.; Saucedo, E.

    2017-05-01

    This paper reports the synthesis of CuIn(S1-ySey)2 (CISSe) (y = 0.84-0.93) ultra-thin films prepared by a sequential process based on the chemical bath deposition of In2S3/Cu2-xS precursor layers, followed by annealing under selenium atmosphere. The layers were synthesized varying the [Cu]/[In] ratio from 0.8 to 1.26 and the impact of this variation on the surface region of the ultra-thin absorbers is analyzed for each composition. Through a first optimization of this parameter, we achieved power conversion efficiencies up to 2.7% with open circuit voltage of 334 mV, short circuit current density of 16.1 mA/cm2 and fill factor of 50.9% using a Glass/Mo/CISSe/CdS/i-ZnO/ZnO:Al solar cell structure, for a 600 nm thick absorber annealed at relatively low temperature (450 °C/30 min). This demonstrates that this new synthesis method has potential as a low-cost alternative for CISSe solar cells production.

  4. Transport properties of CuIn(1-x)Al(x)Se2/AZnO heterostructure for low cost thin film photovoltaics.

    PubMed

    Murali, Banavoth; Krupanidhi, S B

    2014-02-07

    CuIn(1-x)Al(x)Se2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (ΔSO) and crystal field (ΔCF) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn(1-x)Al(x)Se2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A.M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 × 10(-3) A in the dark at 1 V to 3 × 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity Rλ ~ 920 A W(-1), sensitivity S ~ 9.0, specific detectivity D* ~ 3 × 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

  5. Surface effects of heat treatments in active atmosphere on structural, morphological and electrical characteristics of CuInS{_2} thin films

    NASA Astrophysics Data System (ADS)

    Kanzari, M.; Abaab, M.; Rezig, B.; Brunel, M.

    1999-05-01

    Thin amorphous CuInS2 films were deposited on the glass substrates by single source thermal evaporation technique. The effect of heat treatments in sulfur atmosphere, in air and under vacuum on the surface layers is discussed in terms of the surface structure of the films. The films were examined by grazing X-ray diffraction and reflectometry (GXRD and GXRR). From a comparison with the GXRD results, the densities of the surface layers are explained by the presence of secondary phases. We established a correlation between stoichiometry and conductivity depending on the annealing conditions. Des couches minces de CuInS2 amorphe sont déposées sur des substrats de verre par la technique d'évaporation thermique monosource. L'effet des traitements thermiques sous atmosphère de soufre, air et sous vide sur les surfaces des couches a été discuté en relation avec les propriétés structurales des surfaces des couches. Les couches sont analysées par la réflectométrie et la diffraction de rayons X rasants. Par comparaison avec les résultats de la diffraction de rayons X rasants, les densités des surfaces des couches sont expliquées par la présence des phases secondaires. Nous avons établi une corrélation entre la stœchiométrie des couches et leurs conductivités en fonction des conditions de recuit.

  6. A Comprehensive Study of One-Step Selenization Process for Cu(In1- x Ga x )Se2 Thin Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Chen, Shih-Chen; Wang, Sheng-Wen; Kuo, Shou-Yi; Juang, Jenh-Yih; Lee, Po-Tsung; Luo, Chih Wei; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2017-03-01

    In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1- x Ga x Se2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage ( J- V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.

  7. A Comprehensive Study of One-Step Selenization Process for Cu(In1-x Ga x )Se2 Thin Film Solar Cells.

    PubMed

    Chen, Shih-Chen; Wang, Sheng-Wen; Kuo, Shou-Yi; Juang, Jenh-Yih; Lee, Po-Tsung; Luo, Chih Wei; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2017-12-01

    In this work, aiming at developing a rapid and environmental-friendly process for fabricating CuIn1-x Ga x Se2 (CIGS) solar cells, we demonstrated the one-step selenization process by using selenium vapor as the atmospheric gas instead of the commonly used H2Se gas. The photoluminescence (PL) characteristics indicate that there exists an optimal location with superior crystalline quality in the CIGS thin films obtained by one-step selenization. The energy dispersive spectroscopy (EDS) reveals that the Ga lateral distribution in the one-step selenized CIGS thin film is intimately correlated to the blue-shifted PL spectra. The surface morphologies examined by scanning electron microscope (SEM) further suggested that voids and binary phase commonly existing in CIGS films could be successfully eliminated by the present one-step selenization process. The agglomeration phenomenon attributable to the formation of MoSe2 layer was also observed. Due to the significant microstructural improvement, the current-voltage (J-V) characteristics and external quantum efficiency (EQE) of the devices made of the present CIGS films have exhibited the remarkable carrier transportation characteristics and photon utilization at the optimal location, resulting in a high conversion efficiency of 11.28%. Correlations between the defect states and device performance of the one-step selenized CIGS thin film were convincingly delineated by femtosecond pump-probe spectroscopy.

  8. Thickness dependent structural, optical and electrical properties of CuIn0.8Ga0.2Se2 thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Mishra, Pradeep K.; Gautam, Yogendra K.; Kumar, Ashwani; Jain, Ravish K.; Prasad, J. N.; Choudhary, A. K.; Chandra, Ramesh

    2014-01-01

    CuIn0.8Ga0.2Se2 (CIGS) polycrystalline thin films have been deposited on soda lime glass substrate at different deposition time by pulsed laser deposition. The effect of thickness on structural, surface morphological, optical and electrical properties of thin films were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), UV-Vis-NIR spectrophotometer and electrical measurement unit. XRD study reveals that all deposited films are polycrystalline in nature and have tetragonal phase of CIGS. Crystallinity of CIGS films has been found to improve with increase in thickness of CIGS films as evidenced by sharp XRD peaks for (112) orientation. Grain size and rms surface roughness of CIGS films have been found to be increased with increase in thickness. All the deposited CIGS films exhibit direct band gap semiconducting behaviour with ˜106 cm-1 absorption co-efficient. Optical band gap and resistivity of CIGS films have been found to decrease with increase in thickness.

  9. Influence of substrate and its temperature on the optical constants of CuIn1-xGaxSe2 thin films

    NASA Astrophysics Data System (ADS)

    Yin, G.; Manley, P.; Schmid, M.

    2014-04-01

    We investigate the influence of substrate and its temperature on the optical constants of CuIn1-xGaxSe2 (CIGSe) thin films using the transfer-matrix method. The optical constants of a CIGSe layer on top of a transparent conducting oxide (TCO) layer were calculated considering the realistic optical constants of the TCO layer after CIGSe deposition. It was found that TCO substrates could influence the optical constants of CIGSe layers and that the ITO (Sn doped In2O3) substrate had a greater impact than IMO (Mo doped In2O3) for the CIGSe (x = 0.4) film when compared to a reference on bare glass substrate. Additionally, the varied substrate temperatures did not impact the optical constants of CGSe (x = 1). For CIGSe (x = 0.4), the refractive index n stayed relatively independent although at low temperature the grain size was reduced and the Ga/(Ga+In) profile was altered compared to that at high temperature (610 °C). In contrast, the extinction coefficient k at low temperature showed higher absorption at longer wavelengths because of a lower minimum bandgap (Eg,min) originating from reduced inter-diffusion of Ga-Se at a low substrate temperature.

  10. Effects of water vapor introduction during Cu(In1-x Gax )Se2 deposition on thin film properties and solar cell performance

    NASA Astrophysics Data System (ADS)

    Ishizuka, S.; Sakurai, K.; Yamada, A.; Matsubara, K.; Shibata, H.; Yonemura, M.; Nakamura, S.; Nakanishi, H.; Kojima, T.; Niki, S.

    2006-09-01

    The effects of water vapor introduction during the growth of Cu(In1-x Gax )Se2, specifically CuInSe2 (CISe), Cu(In,Ga)Se2 (CIGSe), and CuGaSe2 (CGSe) thin films were studied. We have developed thus far a novel technique to improve CIGSe (x 0.5) cell performance by means of water vapor introduction during CIGSe deposition. In this study, we have examined the effectiveness of water vapor introduction for other x -compositions (CISe and CGSe). Variations in the electrical properties observed in CIGSe (x 0.5), that is, increasing hole density and conductivity with water vapor introduction, were also observed in CISe and CGSe. Water vapor introduction affected solar cell performance as well; open circuit voltages, short circuit current densities, and efficiencies were improved. The improvements in cell performance are thought to be related to annihilation of donor defects arising from Se-vacancies by incorporation of oxygen from the water vapor. In addition to this, the sodium content in the CIGSe layers was found to depend on the partial pressure of water vapor during deposition. This result suggests that the improvement mechanism is also related with the so-called Na-effects'.

  11. Synthesis, electronic and opto-electronic transport properties of atomically thin 2D layers of MoS2, WSe2 and CuIn 7Se11

    NASA Astrophysics Data System (ADS)

    Ghosh, Sujoy

    The recent emergence of a new class of two dimensional layered materials (2DLMs) have not only opened up the potential for exciting new technological opportunities but also established a new platform to explore exciting new fundamental physics and chemistry at the limit of atomic thickness. Among several of these newly rediscovered 2DLMs, transition metal dichalcogenides (TMDCs) as well as other elemental combinations of Group III and Group VI represent a large family of 2D layered materials, which can be isolated into few atomic layers. These materials show remarkable promise for future electronic and opto-electronics applications. The scope of this dissertation, thus, broadly covers the electronic and opto-electronic properties of such few layered 2D materials. Extensive investigation of electronic and opto-electronic transport phenomena of charge carriers in few layer MoS2 synthesized using a variety of methods such as Chemical Vapor Deposition (CVD), liquid phase exfoliation and mechanical exfoliation as well as CVT grown mechanically exfoliated WSe2 and ternary alloy of CuIn7Se11 is reported. Specifically, it is shown that in case of MoS2, the ac conductance (sigma(o); measured in the range of 10mHz < o < 0.1 MHz) of atomically thin 2D layers of chemical vapor deposited (CVD) Molybdenum Disulphide (MoS2) as well as thin films of exfoliated flakes of MoS2, show "universal" power law behavior (with sigma(o) os). The temperature dependence of 's' indicate that the mechanism of ac transport in CVD MoS2 is due to electron hopping by quantum mechanical tunneling (QMT) process whereas the ac transport in exfoliated MoS2 films is due to correlated barrier hoping (CBH) mechanism. The ac conductivity also show scaling behavior, manifested by collapse of the ac conductivity data for both the samples at various temperatures to one single master curve. The T-gamma dependence of the d.c conductance suggests that in case of the CVD - grown and mechanically exfoliated MoS2

  12. Phonon confinement and strain in CuInS2

    NASA Astrophysics Data System (ADS)

    Camus, C.; Rudigier, E.; Abou-Ras, D.; Allsop, N. A.; Unold, T.; Tomm, Y.; Schorr, S.; Gledhill, S. E.; Köhler, T.; Klaer, J.; Lux-Steiner, M. C.; Fischer, Ch.-H.

    2008-03-01

    Single crystalline and polycrystalline CuInS2 samples prepared by different methods are characterized by Raman spectroscopy. The measured spectra are fitted according to the phonon confinement model. Correlation lengths were obtained, which correspond to the size of domains of perfect crystallinity. These correlation lengths are in good agreement with distances between twin defects observed by transmission electron microscopy in polycrystalline CuInS2. Additionally, the strain present in the samples was determined from the Raman spectra. A tensile strain was obtained for the polycrystalline CuInS2 thin films, which agrees well with published values for the same material.

  13. Zn incorporation and (CuIn)1-xZn2xSe2 thin film formation during the selenization of evaporated Cu and In precursors on Al:ZnO coated glass substrates

    NASA Astrophysics Data System (ADS)

    Guillén, C.; Herrero, J.

    2011-11-01

    CuInSe2 thin films with typical 1.0 eV gap energy and tetragonal chalcopyrite structure have been obtained on soda-lime glass substrates by the reaction of sequentially evaporated Cu and In layers with elemental selenium vapor, at 500 °C in flowing Ar. When analogous deposition and reaction processes were performed on Al:ZnO coated glasses, some increment in the band gap energy and diminution in the crystalline interplanar spacings have been detected for the resulting films with an extent that depends on the Cu/In atomic ratio of the evaporated precursor layers. This fact has been related to Zn incorporation into the selenized film, with quaternary (CuIn)1-xZn2xSe2 compound formation that is influenced by the presence of copper selenide phases during the reaction process. Such deductions are supported by the optical, structural and compositional characterizations that have been performed comparatively on samples prepared by selenization of evaporated metallic precursors with two different Cu/In ratios (0.9 and 1.1) on bare and Al:ZnO coated glass substrates.

  14. Development of sputtering systems for large-area deposition of CuIn1-xGaxSe1-ySy thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Jahagirdar, Anant H.; Kadam, Ankur A.; Patil, Harshad P.; Kulkarni, Sachin S.

    2003-07-01

    CuIn1-xGaxSe1-ySy (CIGS) thin-film modules are expected to become cheaper than crystalline silicon modules within 5 yr. At present, commissioning and reaching full production of thin film modules is delayed because of nonavailability of turnkey manufacturing plants. Very few universities are conducting research on development of PV plants. CIGS thin-film solar cells are being prepared routinely at Florida Solar Energy Center (FSEC) on glass and metallic foil substrates for terrestrial and space applications. Earlier, the substrate size was limited to 3×3 cm2. This article presents results of development of large-area sputtering systems for preparation of large (15.2×15.2 cm2) CIGS thin-film solar cells. The facilities have the potential of serving as a nucleus of a pilot plant for fabrication of CIGS minimodules. Initial problems of bowing of the brass diaphragm, restriction of effective water flow and consequent heating of the target material were resolved by increasing the thickness of the backing plate and redesigning the structural members. Thickness uniformity was improved by modifying the magnetic field distribution in the middle 15 cm portion of the 10.2×30.5 cm2 magnetron sputtering sources by selectively removing nickel-coated soft-iron pieces at the rear. This resulted in Mo layer thickness uniformity of +/-3% over 10.2×10.2 cm2. The magnetic field was boosted at extremities to avoid precipitous ~15% drop beyond 10.2 cm. With this, thickness uniformities of +/-2.5% for Mo and +/-4.5% for ZnO over 12.7×10.2 cm2 have been achieved however with a continuing drop beyond 12.7 cm width. Modifying the magnetic field to achieve better distribution by preferentially removing soft irons pieces and also boosting of the magnetic field at the ends are two new concepts introduced and successfully utilized in this study. Scaling up of the large-area uniform deposition of metallic precursor layers was a challenging task. The efforts were directed towards obtaining

  15. Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

    NASA Technical Reports Server (NTRS)

    Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

    2005-01-01

    The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

  16. Synthesis and Characterization of the First Liquid Single Source Precursors for the Deposition of Ternary Chalcopyrite (CuInS2) Thin Film Materials

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Cowen, Jonathan; Hepp, Aloysius

    2002-01-01

    Molecular engineering of ternary single source precursors based on the [{PBu3}2Cu(SR')2In(SR')2] architecture have afforded the first liquid CIS ternary single source precursors (when R = Et, n-Pr), which are suitable for low temperature deposition (< 350 C). Thermogravimetric analyses (TGA) and modulated-differential scanning calorimetry (DSC) confirm their liquid phase and reduced stability. X-ray diffraction studies, energy dispersive analyzer (EDS), and scanning electron microscopy (SEM) support the formation of the single-phase chalcopyrite CuInS2 at low temperatures.

  17. Structures, optical absorption and electrical properties of pulsed-laser-deposited CuIn0.8Ga0.2Se2 thin films and their use in CIGS/PCBM photovoltaic structures

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Wu, JiaDa; Xu, Ning

    2016-10-01

    Polycrystalline CuIn0.8Ga0.2Se2 (CIGS) thin films are deposited on ITO-glass substrates at different substrate temperatures by pulsed laser deposition using a Nd:YAG laser. The crystallinity of the as-deposited CIGS films significantly improved as the substrate temperature increased. The experimental results indicate that the ordered defect compound model is also applicable to the CIGS films deposited in these experiments. All the as-deposited CIGS thin films show absorption coefficients of 105 cm-1 magnitude in a wavelength range of 400-900 nm. The CIGS thin films deposited at substrate temperatures lower than 400 °C exhibit n-type conductivity while those deposited at a substrate temperature of 500 °C display p-type conductivity. The CIGS/phenyl-C61-butyric acid methyl ester (PCBM) photovoltaic structure, with a CIGS layer as the only absorber, demonstrates an apparent photovoltaic response with a short circuit current density of 0.389 mA cm-2 and an open circuit voltage of 0.327 V.

  18. Application of ICP-OES to the determination of CuIn(1-x)Ga(x)Se2 thin films used as absorber materials in solar cell devices.

    PubMed

    Fernández-Martínez, Rodolfo; Caballero, Raquel; Guillén, Cecilia; Gutiérrez, María Teresa; Rucandio, María Isabel

    2005-05-01

    CuIn(1-x)Ga(x)Se2 [CIGS; x=Ga/(In+Ga)] thin films are among of the best candidates as absorber materials for solar cell applications. The material quality and main properties of the polycrystalline absorber layer are critically influenced by deviations in the stoichiometry, particularly in the Cu/(In+Ga) atomic ratio. In this work a simple, sensitive and accurate method has been developed for the quantitative determination of these thin films by inductively coupled plasma optical emission spectrometry (ICP-OES). The proposed method involves an acid digestion of the samples to achieve the complete solubilization of CIGS, followed by the analytical determination by ICP-OES. A digestion procedure with 50% HNO3 alone or in the presence of 10% HCl was performed to dissolve those thin films deposited on glass or Mo-coated glass substrates, respectively. Two analytical lines were selected for each element (Cu 324.754 and 327.396 nm, Ga 294.364 and 417.206 nm, In 303.936 and 325.609 nm, Se 196.090 and 203.985 nm, and Mo 202.030 and 379.825 nm) and a study of spectral interferences was performed which showed them to be suitable, since they offered a high sensitivity and no significant inter-element interferences were detected. Detection limits for all elements at the selected lines were found to be appropriate for this kind of application, and the relative standard deviations were lower than 1.5% for all elements with the exception of Se (about 5%). The Cu/(In+Ga) atomic ratios obtained from the application of this method to CIGS thin films were consistent with the study of the structural and morphological properties by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

  19. Compositional analysis of CuInS2 chalcopyrite semiconductor

    NASA Astrophysics Data System (ADS)

    Hwang, H. L.; Liu, L. M.; Yang, M. H.; Hung, T. F.; Chen, P. Y.; Chen, J. R.; Sun, C. Y.

    A chemical method for measuring the precise stoichiometry of CuInS2 is presented and applied. The method involves digestion of a 50-100-mg sample in HNO3, Cu determination by controlled-potential electrodeposition on a Pt cathode, and titrimetric determination of SO4. The relative error of the method (-0.08 percent for Cu, +0.11 percent for In, and -0.66 percent for S2) is shown to compare favorably with the errors of the physical stoichiometric methods applicable to CuInS2. When the method was applied to samples from different parts of a single synthesized ingot, considerable variation in composition was found; uniformity can be achieved by remelting and cooling in a flat-zone furnace or by normal-furnace remelting and water quenching. Crystals grown by chemical vapor transport (CVT) are shown to reflect the composition of their source material closely. The method presented here is seen as an important tool for improving the photovoltaic quality of CuInS2 crystals; the relatively large sample and long time required are considered a drawback, especially for thin-film analysis.

  20. Charge-carrier dynamics in polycrystalline thin-film CuIn1-xGaxSe2 photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

    NASA Astrophysics Data System (ADS)

    Kuciauskas, Darius; Li, Jian V.; Kanevce, Ana; Guthrey, Harvey; Contreras, Miguel; Pankow, Joel; Dippo, Pat; Ramanathan, Kannan

    2015-05-01

    We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn1-xGaxSe2 (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn1-xGaxSe2 (with x ≈ 0.3) as 22 ± 2 cm2(Vs)-1. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

  1. Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties

    SciTech Connect

    Johnston, S.; Unold, T.; Repins, I.; Kanevce, A.; Zaunbrecher, K.; Yan, F.; Li, J. V.; Dippo, P.; Sundaramoorthy, R.; Jones, K. M.; To, B.

    2012-07-01

    Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se{sub 2} (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices corresponding efficiency and open-circuit voltage (V{sub OC}), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.

  2. Direct Synthesis of Highly Conductive tert-Butylthiol-Capped CuInS2 Nanocrystals.

    PubMed

    Lefrançois, Aurélie; Pouget, Stéphanie; Vaure, Louis; Lopez-Haro, Miguel; Reiss, Peter

    2016-03-03

    tert-butylthiol (tBuSH) is used as the sulfur source, surface ligand and co-solvent in the synthesis of CuInS2 nanocrystals (NCs). The presented method gives direct access to short-ligand-capped NCs without post-synthetic ligand exchange. The obtained 5 nm CuInS2 NCs crystallize in the cubic sphalerite phase with space group F-43m and a lattice parameter a=5.65 Å. Their comparably large optical and electrochemical band gap of 2.6-2.7 eV is attributed to iodine incorporation into the crystal structure as reflected by the composition Cu1.04 In0.96 S1.84 I0.62 determined by EDX. Conductivity measurements on thin films of the tBuSH-capped NCs result in a value of 2.5(.) 10(-2)  S m(-1) , which represents an increase by a factor of 400 compared to established dodecanethiol-capped CuInS2 NCs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Improved Photovoltaic Characteristics and Grain Boundary Potentials of CuIn0.7Ga0.3Se2 Thin Films Spin-Coated by Na-Dissolved Nontoxic Precursor Solution.

    PubMed

    Choi, Ik Jin; Jang, Jin Woo; Mohanty, Bhaskar Chandra; Lee, Seung Min; Cho, Yong Soo

    2016-07-13

    This work introduces the incorporation of Na into the nontoxic precursor solution of CIGS to improve photovoltaic cell performance with the optimized benefits of Na. The extensive incorporation range of 0.05 to 0.5 mol % Na is used for the simple spin-coating process of high quality absorber thin films. A cell efficiency of ∼8.21%, which corresponds to an improvement of ∼10.2% compared to the reference sample, is achieved for the 0.25 mol % Na sample with enhanced open-circuit voltage and fill factor. The improvement was further analyzed as related to InCu defects and grain boundary potentials.

  4. Fabrication of CuInS2 films from electrodeposited Cu/In bilayers: effects of preheat treatment on their structural, photoelectrochemical and solar cell properties.

    PubMed

    Lee, Sun Min; Ikeda, Shigeru; Yagi, Tetsuro; Harada, Takashi; Ennaoui, Ahmed; Matsumura, Michio

    2011-04-14

    Polycrystalline CuInS(2) films were fabricated by sulfurization of electrodeposited Cu and In metallic precursor films in a Cu-rich composition at 520 °C in H(2)S (5% in Ar). Structural analyses revealed that the adherence of the thus-formed CuInS(2) film to the Mo substrate was strongly dependent on heating profiles of the Cu/In bilayer film: a CuInS(2) film with poor adherence having many crevices was formed when the Cu/In bilayer film was heated monotonously from room temperature to 520 °C in Ar within 25 min followed by sulfurization, whereas CuInS(2) films with good adherence were obtained when the Cu/In films were pretreated at 110 °C in Ar for 10-60 min just before increasing the temperature up to 520 °C for sulfurization. It was also clarified that the CuInS(2) film obtained without 110 °C pretreatment had pinholes inside the film, whereas the CuInS(2) films formed after 110 °C pretreatment showed no notable pinholes. Photoelectrochemical responses of these CuInS(2) films in an electrolyte solution containing Eu(III) indicated that the CuInS(2) films obtained after 110 °C pretreatment had higher external quantum efficiency (EQE) values than those of films obtained without 110 °C pretreatment, mainly due to better adherence of 110 °C pretreated CuInS(2) films to the Mo substrate than the CuInS(2) film obtained without 110 °C pretreatment. The performance of solar cells with an Al:ZnO/Zn(S,O)/CdS/CuInS(2)/Mo structure also depended on the structural characteristics of the CuInS(2) films, i.e., preliminary conversion efficiencies of ca. 5% were obtained for devices based on the CuInS(2) films obtained after 110 °C pretreatment, whereas the device prepared by the CuInS(2) film without 110 °C pretreatment showed the conversion efficiency less than 1.5%.

  5. The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2003-01-01

    Ternary single-source precursors were used to deposit CuInS2 thin films using chemical spray pyrolysis. We investigated the effect of the film composition on texture, secondary phase formation, and grain size. As-grown films were most often In-rich. They became more (204/220)-oriented as indium concentration increased, and always contained a yet unidentified secondary phase. The (112)-prefened orientation became more pronounced as the film composition became more Cu-rich. The secondary phase was determined to be an In-rich compound based on composition analysis and Raman spectroscopy. In addition, as-grown Cu-rich (112)-oriented films did not exhibit the In-rich compound. Depositing a thin Cu layer prior to the growth of CuInS2 increased the maximum grain size from - 0.5 micron to - 1 micron, and prevented the formation of the In-rich secondary phase.

  6. Local Structure of CuIn3Se5

    SciTech Connect

    Chang, C. H.; Wei, S. H.; Leyarovska, N.; Johnson, J. W.; Zhang, S. B.; Stanbery, B. J.; Anderson, T. J.

    2000-01-01

    The results of a detailed EXAFS study of the Cu-K, In-K, and Se-K edges CuIn3Se5 are reported. The Cu and In first nearest neighbor local structures were found to be almost identical to those in CuInSe2.

  7. 19.5%-Efficient CuIn1-xGaxSe2 Photovoltaic Cells Using A Cd-Zn-S Buffer Layer

    SciTech Connect

    Bhattacharya. R. N.

    2008-01-01

    CuIn1-xGaxSe2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) Zn1-xCdxS (CdZnS), ZnS, and CdS buffer layers are discussed. A 19.52%-efficient, CIGS-based, thin-film photovoltaic device has been fabricated using a single-layer CBD CdZnS buffer layer. The mechanism that creates extensive hydroxide and oxide impurities in CBD-ZnS and CBD-CdZnS thin films (compared to CBD-CdS thin film) is presented.

  8. Nanocrystalline CuInS2 And CuInSe2 via Low-Temperature Pyrolysis Of Single-Source Molecular Precursors

    NASA Technical Reports Server (NTRS)

    Castro, Stephanie L.; Bailey, Sheila G.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Hepp, Aloysius F.

    2002-01-01

    Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of the material with the correct stoichiometry, as a nanocrystalline powder or a thin film. Nanocrystalline materials hold potential as components of next-generation Photovoltaic (PV) devices. Presented here are the syntheses of CuInS2 and CuInSe2 nanocrystals from the precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively. The size of the nanocrystals varies with the reaction temperature; a minimum of 200 C is required for the formation of the smallest CuInS2 crystals (approximately 1.6 nm diameter); at 300 C, crystals are approximately 7 nm.

  9. Nanocrystalline CuInS2 And CuInSe2 via Low-Temperature Pyrolysis Of Single-Source Molecular Precursors

    NASA Technical Reports Server (NTRS)

    Castro, Stephanie L.; Bailey, Sheila G.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Hepp, Aloysius F.

    2002-01-01

    Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of the material with the correct stoichiometry, as a nanocrystalline powder or a thin film. Nanocrystalline materials hold potential as components of next-generation Photovoltaic (PV) devices. Presented here are the syntheses of CuInS2 and CuInSe2 nanocrystals from the precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively. The size of the nanocrystals varies with the reaction temperature; a minimum of 200 C is required for the formation of the smallest CuInS2 crystals (approximately 1.6 nm diameter); at 300 C, crystals are approximately 7 nm.

  10. Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

    PubMed Central

    2012-01-01

    Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se2 solar cells. PMID:22221917

  11. Electronic level alignment at the deeply buried absorber/Mo interface in chalcopyrite-based thin film solar cells

    NASA Astrophysics Data System (ADS)

    Bär, M.; Nishiwaki, S.; Weinhardt, L.; Pookpanratana, S.; Shafarman, W. N.; Heske, C.

    2008-07-01

    We have investigated the electronic structure of the absorber/back contact interface for S-free [Cu(In ,Ga)Se2 ("CIGSe")] and S-containing [Cu(In ,Ga)(S,Se)2 ("CIGSSe")] chalcopyrites with direct and inverse photoemission. Comparison of the electronic levels of the cleavage planes reveals a pronounced cliff in the conduction band at the CIG(S )Se/Mo interface. For the valence band, we find a flat alignment and a small spike for the CIGSe- and CIGSSe-based structures, respectively.

  12. Inexpensive methodology to prepare TiO2/CuInS2 hetero-junctions for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Di Iorio, Y.; Vázquez, M.

    2017-04-01

    TiO2 and CuInS2 (CIS) hetero-junctions were prepared using low-cost, solution-based techniques. Using conducting glass (FTO) as substrate, a thin film of TiO2 and an ultrathin film of In2S3 that acts as buffer layer were deposited by spray pyrolysis. CIS was electrodeposited on top of this duplex layer, at pH 8, room temperature and at constant potential. A solar cell consisting of FTO/TiO2/In2S3/CIS/graphite was built in superstrate configuration. Morphology, thickness, crystalline structure and chemical composition were analyzed by electronic microscopy, x-ray diffraction and Raman spectroscopy. CuInS2 films were found to be crystalline with a thickness of 0.4 µm and showed good adhesion. Current-voltage curves in the dark and under illumination proved that the solution-based and vacuum-free deposition of these materials has promising photovoltaic applications. Different thicknesses of the buffer layer were evaluated and the best results were found for In2S3 layers deposited with 6 spray cycles. The best solar cell performance showed an efficiency equal to 3.3% with a V oc  =  0.583 V, J sc  =  17.7 mA cm-2, FF  =  0.32.

  13. Elaboration et caracterisation de couches minces de CuInS2 deposees par la pyrolyse par pulverisation ultrasonique a base de transducteur

    NASA Astrophysics Data System (ADS)

    Petuenju, Eric Nguwuo

    The present thesis study is part of the work of The Laboratory of New Materials for Energy and Electrochemistry systems (LaNoMat) that search new techniques to elaborate new materials for photovoltaic solar applications. This aims contribute to the development of the exploitation of solar energy into electrical energy by the maximum of the population throughout the world. This work deals with the determination of CuInS2 thin film deposition parameters by ultrasonic spray pyrolysis method for applications in the technology of three dimensional (3D) solar cells. The structure of the band gap of CuInS2 (a semiconductor material with a direct bandgap of 1.55 eV) makes it an excellent candidate for the role of the absorber in thin film technology for solar photovoltaic applications. 3D solar photovoltaic technology requires the production of a p-n junction with n and p-type semiconductors to make networks. The production and growth of such networks depends on the creation of thin films which have the characteristics of an ultrathin nanocomposite or extremely thin absorber (typically a few tens of nanometers) or which act as a quantum dot. To allow the emergence of 3D photovoltaic technology, it is important to develop methods for the growth of thin layers of materials such as CuInS 2, which are potentially interesting for this purpose. But the development of methods for thin film deposition, for the reasons of competition and accessibility, must be considered as an important factor in the context of the development of three-dimensional photovoltaic solar cells at low cost (production costs: of the order of 0,5 a 0,3$US/Watt-peak) (Beard et al., 2014). To do this it is necessary to use materials manufacturing technology readily available and inexpensive, and allowing to have materials on large surface, such as pyrolysis which allows to reduce costs by a factor of 100 compared to the crystallogenesis. Pyrolysis is defined as a process for decomposing one or more compounds

  14. Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

    NASA Astrophysics Data System (ADS)

    Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

    2017-08-01

    Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

  15. Synthesis of CuInS2 quantum dots using polyetheramine as solvent

    NASA Astrophysics Data System (ADS)

    Shei, Shih-Chang; Chiang, Wen-Jui; Chang, Shoou-Jinn

    2015-03-01

    This paper presents a facile solvothermal method of synthesizing copper indium sulfide (CuInS2) quantum dots (QDs) via a non-coordinated system using polyetheramine as a solvent. The structural and optical properties of the resulting CuInS2 QDs were investigated using composition analysis, absorption spectroscopy, and emission spectroscopy. We employed molar ratios of I, III, and VI group elements to control the structure of CuInS2 QDs. An excess of group VI elements facilitated precipitation, whereas an excess of group I elements resulted in CuInS2 QDs with high photoluminescence quantum yield. The emission wavelength and photoluminescence quantum yield could also be modulated by controlling the composition ratio of Cu and In in the injection stock solution. An increase in the portion of S shifted the emission wavelength of the QDs to a shorter wavelength and increased the photoluminescence quantum yield. Our results demonstrate that the band gap of the CuInS2 QDs is tunable with size as well as the composition of the reactant. The photoluminescence quantum yield of the CuInS2 QDs ranged between 0.7% and 8.8% at 250°C. We also determined some important physical parameters such as the band gaps and energy levels of this system, which are crucial for the application of CuInS2 nanocrystals.

  16. Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

    NASA Technical Reports Server (NTRS)

    Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

    1998-01-01

    Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

  17. Fabrication of CIGS thin films by using spray pyrolysis and post-selenization

    NASA Astrophysics Data System (ADS)

    Kim, Seong Yeon; Kim, JunHo

    2012-06-01

    We fabricated Cu(In1- x Ga x )Se2 ( x: 0 ˜ 0.4) thin films by using ultrasonic spray pyrolysis and post-selenization. First, we made Cu(In1- x Ga x )S2 ( x: 0 ˜ 0.4) films by ultrasonic spray pyrolysis under an air environment. Then, we converted as-sprayed Cu(In1- x Ga x )S2 (CIGS) films to Cu-(In1- x Ga x )Se2 (CIGSe) films through post-selenization. For all Ga fractions, the sprayed CIGS films were well recrystallized into poly-crystalline CIGSe films with a dominant (112) texture, which was confirmed by X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analyses. This result indicates that CIGSe films with any amount of Ga substitution can be made by converting sprayed CIGS to CIGSe with post-selenization.

  18. Formulation and Characterization of CuIn1-xGaxSe2 Ink for Gravure Offset Printing

    NASA Astrophysics Data System (ADS)

    Kim, Inyoung; Han, Hyun-Suk; Kwak, Sun-Woo; Yu, Jong-Su; Kim, Bongmin; Jang, Yunseok; Lee, Taik-Min

    2013-05-01

    CuIn1-xGaxSe2 (CIGS) paste for gravure offset printing was formulated by changing the amount of additives to determine the critical factor for gravure offset printing quality. With the addition of poly(vinyl pyrrolidone) (PVP), the viscosity and yield stress of CIGS ink decreased and shear thinning behavior disappeared. However, PVP effectively enhanced ink cohesion and elastic modulus, which critically affected the printability of the CIGS paste. Intense pulsed light (IPL) treatment in air made the microstructure of CIGS film denser without a phase change or oxidation. The gravure offset printing technique and IPL treatment were considered a good combination for a continuous and fast CIGS film growth process.

  19. Etude des propriétés optiques des couches minces de CuInS2 et d'In-S " Airless spray "

    NASA Astrophysics Data System (ADS)

    Kamoun, N.; Bennaceur, R.; Frigerio, J. M.

    1994-05-01

    In this work we have studied the optical properties of the thin CuInS2 and In-S layers prepared by airless spray " P.S.A. ". The study of the optical properties from the ellipsometric measure realized in the interval energy of incident photons [1.5-4] eV, has showed that the refraction index n_1 and the extinction coefficient k_1 vary in the interval [1.8-2.3] and [0.45-0.80] respectively. The absorption coefficient α of the thin CuInS2 layers realized for different ratios x of the concentrations in the spray solution (x =frac[CuI][InIII]) is high with values varied between (5 × 10^4 and 18 × 10^4 cm^{-1}). The direct gap energy of the thin CuInS2 layers of the order of 1.38 eV. In the same way, we study the spectrum variation of n_1 (λ) and k_1 (λ) of the thin In-S layers, realized for two values of ratio y of the concentration in the spray solution (y=frac{[In^{3+}]}{[S^{2-}]}), shows that for the value of y = 0.6 (material β-In2S3) the refraction index is higher than that of the thin layer obtained for the value of y = 0.75 (material In6S7) [1], and that the extinction coefficient is lower than that of In6S7. For In-S thin layers, α is also high with values varing between 2×10^4 and 12×10^4 cm^{-1}. The direct band gap of materials β-In2S3 and In6S7 are 2.22 eV and 1.94 eV respectively. The heat treatment under vacuum at 573 K during two hours improves the optical quality of the thin " p " type CuInS2 Layer. Dans ce travail nous avons étudié les propriétés optiques des couches minces de CuInS2 et d'In-S réalisées par pulvérisation chimique réactive sans air " P.S.A. ". L'étude des propriétés optiques des couches minces de CuInS2, à partir des mesures ellipsométriques effectuées dans le domaine des photons incidents [1,5-4] eV, a révélé que l'indice de réfraction n_1 et le coefficient d'extinction k_1 varient respectivement dans les domaines [1,8-2,3] et [0,45-0,80]. Le coefficient d'absorption α, des couches minces de CuInS2 r

  20. Facile thermolysis synthesis of CuInS2 nanocrystals with tunable anisotropic shape and structure.

    PubMed

    Bao, Ningzhong; Qiu, Xinmin; Wang, Yu-Hsiang A; Zhou, Ziyou; Lu, Xiaohua; Grimes, Craig A; Gupta, Arunava

    2011-09-07

    Monodisperse CuInS(2) nanocrystals are produced by injecting mixed metal-oleate precursors into hot organic solvents containing the dissolved sulphur sources. A better understanding of the formation mechanism of CuInS(2) has enabled us to tailor anisotropic shapes in the form of triangular-pyramid, circular cone, and bullet-like rods with tunable crystal phases by varying the synthetic conditions. This journal is © The Royal Society of Chemistry 2011

  1. Enhanced Photocarrier Separation in Hierarchical Graphitic-C3N4-Supported CuInS2 for Noble-Metal-Free Z-Scheme Photocatalytic Water Splitting.

    PubMed

    Li, Xiaoxue; Xie, Keyu; Song, Long; Zhao, Mengjia; Zhang, Zhipan

    2017-07-26

    The effective separation of photogenerated electrons and holes in photocatalysts is a prerequisite for efficient photocatalytic water splitting. CuInS2 (CIS) is a widely used light absorber that works properly in photovoltaics but only shows limited performance in solar-driven hydrogen evolution due to its intrinsically severe charge recombination. Here, we prepare hierarchical graphitic C3N4-supported CuInS2 (denoted as GsC) by an in situ growth of CIS directly on exfoliated thin graphitic C3N4 nanosheets (g-C3N4 NS) and demonstrate efficient separation of photoinduced charge carriers in the GsC by forming the Z-scheme system for the first time in CIS-catalyzed water splitting. Under visible light illumination, the GsC features an enhanced hydrogen evolution rate up to 1290 μmol g(-1) h(-1), which is 3.3 and 6.1 times higher than that of g-C3N4 NS and bare-CIS, respectively, thus setting a new performance benchmark for CIS-based water-splitting photocatalysts.

  2. Hydroxyl-Terminated CuInS2-Based Quantum Dots: Potential Cathode Interfacial Modifiers for Efficient Inverted Polymer Solar Cells.

    PubMed

    Chen, Hui; Chao, Pengjie; Han, Dengbao; Wang, Huan; Miao, Jingsheng; Zhong, Haizheng; Meng, Hong; He, Feng

    2017-03-01

    The use of interfacial modifiers on cathode or anode layers can effectively reduce the recombination loss and thus have potential to enhance the device performance of polymer solar cells. In this work, we demonstrated that hydroxyl-terminated CuInS2-based quantum dots could be potential cathode interfacial modifiers on ZnO layer for inverted polymer solar cells. By casting of a thin film of CuInS2-based quantum dots onto ZnO layer, the controlled devices show obvious enhancements of open-circuit voltage, short-circuit current, and fill factor. With an optimized interfacial layer with ∼7 nm thickness, an improvement of power conversion efficiency up to 16% is obtained and the optimized power conversion efficiency of PTB7-based (PTB7: poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno[3,4-b] thiophenediyl

  3. Effect of alloying on the photoluminescence of the CuInS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Kim, Young-Kuk; Choi, Chul-Jin

    2011-10-01

    We have developed a novel route to highly luminescent Cd-free core-shell nanocrystals. By simply refluxing assynthesized CuInS2 nanocrystals with zinc acetate and palmitic acid, highly luminescent CuInS2/ZnS nanocrystals were synthesized. We modified the photoluminescence of the grown nanocrystal by alloying foreign atoms. Nanocrystals with alloyed cores were synthesized by adding selenium and nanocrystals with alloyed shell layers were synthesized by refluxing the as-synthesized CuInS2 nanocrystals with mixture of cadmium acetate, zinc acetate and palmitic acid. It was found that the emission wavelength of the nanocrystals was shifted to longer wavelength side by alloying. The photoluminescence spectra showed clear red-shift without significant minimization of emission intensity. A Detailed study on the emission process of nanocrystals implies that the formation of shell layers with small lattice mismatch minimized mismatch strain generated from the shell layers in contrast to core alloyed nanocrystals.

  4. The phase transformation of CuInS2 from chalcopyrite to wurtzite

    NASA Astrophysics Data System (ADS)

    Xie, Bing-Bing; Hu, Bin-Bin; Jiang, Li-Fang; Li, Guo; Du, Zu-Liang

    2015-02-01

    In the present work, CuInS2 nanoparticles have been successfully synthesized by water-bath method with deionized water as solvent and thioglycolic acid as complexing agent at 80°C. The phase transition of CuInS2 from chalcopyrite to wurtzite was realized by adjusting the pH value of reaction solution. The emergence of Cu2S in the condition of higher pH value of reaction solution led to the formation of wurtzite CuInS2. This facile method that controls the phase structure by adjusting the solution pH value could open a new way to synthesize other I-III-VI2 ternary semiconductor compounds.

  5. New crystal structures in hexagonal CuInS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Shen, Xiao; Hernández-Pagan, Emil A.; Zhou, Wu; Puzyrev, Yevgeniy S.; Idrobo, Juan C.; MacDonald, Janet E.; Pennycook, Stephen J.; Pantelides, Sokrates T.

    2013-03-01

    CuInS2 is one of the best candidate materials for solar energy harvesting. Its nanocrystals with a hexagonal lattice structure that is different from the bulk chalcopyrite phase have been synthesized by many groups. The structure of these CuInS2 nanocrystals has been previously identified as the wurtzite structure in which the copper and indium atoms randomly occupy the cation sites. Using first-principles total energy and electronic structure calculations based on density functional theory, UV-vis absorption spectroscopy, X-ray diffraction, and atomic resolution Z-contrast images obtained in an aberration-corrected scanning transmission electron microscope, we show that CuInS2 nanocrystals do not form random wurtzite structure. Instead, the CuInS2 nanocrystals consist of several wurtzite- related crystal structures with ordered cation sublattices, some of which are reported for the first time here. This work is supported by the NSF TN-SCORE (JEM), by NSF (WZ), by ORNL's Shared Research Equipment User Program (JCI) sponsored by DOE BES, by DOE BES Materials Sciences and Engineering Division (SJP, STP), and used resources of the National Energy Research Scientific Computing Center, supported by the DOE Office of Science under Contract No. DE-AC02-05CH11231.

  6. Synthesis, Characterization and Decomposition Studies of Tris(N,N-dibenzyldithiocarbamato) Indium(III): Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S ), commonly referred to as tris(N,Ndibenzyldithiocarbamato) indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1 bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry and Fourier-Transform infrared spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.

  7. Progress in the Efficiency of Wide-Gap Cu(In1-xGax)Se2 Solar Cells Using CIGSe Layers Grown in Water Vapor

    NASA Astrophysics Data System (ADS)

    Ishizuka, Shogo; Sakurai, Keiichiro; Yamada, Akimasa; Shibata, Hajime; Matsubara, Koji; Yonemura, Minoru; Nakamura, Satoshi; Nakanishi, Hisayuki; Kojima, Takeshi; Niki, Shigeru

    2005-05-01

    Progress in the performance of wide-gap Cu(In1-xGax)Se2 (CIGSe) solar cells for x values around 0.5 has been demonstrated using CIGSe layers grown in the presence of water vapor. While CIGSe thin films deposited in the presence of water vapor showed variations in electrical properties such as increases in hole carrier density and a consequent enhancement of p-type conductivity, no significant changes in the morphology and growth orientation were observed. Both the open circuit voltages and current densities of the CIGSe solar cells were improved using CIGSe layers grown in water vapor. An 18.1%-efficient cell with an open circuit voltage of 0.744 V, a current density of 32.4 mA/cm2 and a fill factor of 0.752 was fabricated from a 1.3 eV-CIGSe (x ˜ 0.48) layer.

  8. Ordered arrays of shape tunable CuInS2 nanostructures, from nanotubes to nano test tubes and nanowires

    NASA Astrophysics Data System (ADS)

    Shi, Liang; Pei, Congjian; Li, Quan

    2010-10-01

    Well-aligned arrays of chalcopyrite CuInS2 one dimensional nanostructures have been prepared in a controllable manner via a convenient wet-chemical approach using anodic aluminium oxide (AAO) as a hard template. Highly oriented CuInS2 nanotubes, nano test tubes and nanowires arrays can be selectively grown by simply varying reaction conditions. Oleylamine (OLA) was found to play a key role in the synthesis and morphology control of the CuInS2 product. The structure, morphology, composition and optical absorption properties of the as-prepared samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy and UV-Vis spectrophotometry. The formation mechanism of the CuInS2 arrays is discussed.

  9. Highly efficient graphene-based Cu(In, Ga)Se₂ solar cells with large active area.

    PubMed

    Yin, Ling; Zhang, Kang; Luo, Hailin; Cheng, Guanming; Ma, Xuhang; Xiong, Zhiyu; Xiao, Xudong

    2014-09-21

    Two-dimensional graphene has tremendous potential to be used as a transparent conducting electrode (TCE), owing to its high transparency and conductivity. To date graphene films have been applied to several kinds of solar cells except the Cu(In, Ga)Se₂ (CIGS) solar cell. In this work, we present a novel TCE structure consisting of a doped graphene film and a thin layer of poly(methyl methacrylate) (PMMA) to replace the ZnO:Al (AZO) electrode for CIGS. By optimizing the contact between graphene and intrinsic ZnO (i-ZnO), a high power conversion efficiency (PCE) of 13.5% has been achieved, which is among the highest efficiencies of graphene-based solar cells ever reported and approaching those of AZO-based solar cells. Besides, the active area of our solar cells reaches 45 mm(2), much larger than other highly efficient graphene-based solar cells (>10%) reported so far. Moreover, compared with AZO-based CIGS solar cells, the total reflectance of the graphene-based CIGS solar cells is decreased and the quantum efficiency of the graphene-based CIGS is enhanced in the near infrared region (NIR), which strongly support graphene as a competitive candidate material for the TCE in the CIGS solar cell. Furthermore, the graphene/PMMA film can protect the solar cell from moisture, making the graphene-based solar cells much more stable than the AZO-based solar cells.

  10. Caractérisations structurale et morphologique des couches minces de CuInS2 et d'In-S "airless spray"

    NASA Astrophysics Data System (ADS)

    Kamoun, N.; Belgacem, S.; Amlouk, M.; Bennaceur, R.; Abdelmoula, K.; Belhadj Amara, A.

    1994-03-01

    We have prepared CuInS2 thin layers by airless spray "S.P.A." in order to use them as an absorber in a photovoltaic cell. The X-ray diffraction analysis has showed that these layers are well crystallized with a privileged (112) principal orientation for a ratio of the concentrations in the pulverized solution x=frac[Cu^I][In^{III]}=1.1. After heat treatment under vacuum the crystallization have been clearly improved. The structural analysis of the thin CuInS2 layers have revealed that a secondary phases of In2S3 and In6S7 are present. Thus we have realized by the same technique thin In-S layers whose structural and morphological properties have been studied. This analysis has showed that the In-S layers are well crystallized for a ratio y=frac[In^{3+]}[S^{2-]}=0.6 in the spray solution. The In-S layers are essentially formed by a β-In2S3 material. Although the In6S7 phase appears to the detriment of β-In2S3 phase for y= 0.75. Nous avons préparé des couches minces de CuInS2, par pulvérisation chimique réactive sans air "P.S.A.", en vue de leur utilisation en tant qu'absorbeur dans un dispositif photovoltaïque. L'analyse par diffraction X a montré que ces couches sont bien cristallisées et que l'orientation principale (112) est privilégiée pour un rapport de concentrations x=frac[Cu^I]{[In^{III}]}=1,1 dans la solution à pulvériser. Après le traitement thermique sous vide la cristallisation est nettement améliorée. L'analyse structurale des couches minces de CuInS2 a révélé que ces couches renferment des phases secondaires d'In2S3 et d'In6S7. Ainsi nous avons réalisé par la même technique "P.S.A.", des couches minces d'In-S dont nous avons étudié les propriétés structurales et morphologiques, Cette analyse a montré que les couches d'In-S sont bien cristallisées. Pour un rapport de concentrations en solution de pulvérisation y=frac[In^{3+]}[S^{2-]}=0,6 les couches d'In-S sont surtout formées du matériau β-In2S3. Alors que la phase In6S7

  11. Enhanced photocatalytic hydrogen evolution activity of CuInS2 loaded TiO2 under solar light irradiation

    NASA Astrophysics Data System (ADS)

    Li, Changjiang; Xi, Zhenhao; Fang, Wenzhang; Xing, Mingyang; Zhang, Jinlong

    2015-03-01

    In this paper, p-n type CuInS2/TiO2 particles were prepared in ethylenediamine by the solvothermal method. The microstructural properties of the synthesized p-n type catalysts were characterized by X-ray diffraction (XRD) in order to confirm the existence of crystalline CuInS2 on the surface of TiO2, which was also confirmed by X-ray photoelectron spectroscopy (XPS). Transmission electron microscopy (TEM) images provided the detailed morphological properties about the CuInS2/TiO2 heterostructure. UV-vis diffuse reflectance spectroscopy (UV-vis DRS) was used to investigate the optical properties of the CuInS2/TiO2 particles. The DRS results indicated that both the p-n type structure and CuInS2 acting as a sensitizer can enhance significantly the absorption of UV and visible light. The photocatalytic activities of the CuInS2/TiO2 particles were evaluated by hydrogen evolution reactions using Xe-lamp irradiation as a simulated solar light source. The greatly enhanced photocatalytic activity of hydrogen evolution under simulated solar light is about ~7 fold higher than that of pure commercial TiO2 (Degussa P25).

  12. Facile Preparation of Wurtzite CuInE2 (E = S, Se) Nanoparticles Under Solvothermal Conditions.

    PubMed

    Zhao, Xuzhao; Huang, Yining; Corrigan, John F

    2016-10-17

    In this work, the synthesis of nanoscale CuInS2 and CuInSe2 was developed using molecular precursors of the type [(Ph3P)2CuIn(ER)4] (E = S, Se) and solvothermal reactions. Various conditions were investigated including the use of different precursors, reaction temperatures, reaction times and the addition of a secondary chalcogen source to mixtures. After optimizing conditions, nanoparticles of CuInS2 and CuInSe2 were isolated with controlled sizes in the range of 2-5 nm (wurtzite structure), which ultimately tuned the band gap energies of the materials. Characterization methods including powder X-ray diffraction, electron microscopy, and optical spectroscopy were used to investigate their structures and photophysical properties.

  13. MoS2 Nanosheet-Modified CuInS2 Photocatalyst for Visible-Light-Driven Hydrogen Production from Water.

    PubMed

    Yuan, Yong-Jun; Chen, Da-Qin; Huang, Yan-Wei; Yu, Zhen-Tao; Zhong, Jia-Song; Chen, Ting-Ting; Tu, Wen-Guang; Guan, Zhong-Jie; Cao, Da-Peng; Zou, Zhi-Gang

    2016-05-10

    Exploiting photocatalysts respond to visible light is of huge challenge for photocatalytic H2 production. Here, we synthesize a new composite material consisting of few-layer MoS2 nanosheets grown on CuInS2 surface as an efficient photocatalyst for solar H2 generation. The photocatalytic results demonstrate that the 3 wt % MoS2 /CuInS2 photocatalyst exhibits the highest H2 generation rate of 316 μmol h(-1)  g(-1) under visible light irradiation, which is almost 28 times higher than that of CuInS2 . Importantly, the MoS2 /CuInS2 photocatalyst shows a much higher photocatalytic activity than that of Pt-loaded CuInS2 photocatalyst. The enhanced photocatalytic activities of MoS2 /CuInS2 photocatalysts can be attributed to the improved charge separation at the interface of MoS2 and CuInS2, which is demonstrated by the significant enhancement of photocurrent responses in MoS2 /CuInS2 photoelectrodes. This work presents a noble-metal-free photocatalyst that responds to visible light for solar H2 generation.

  14. Structure and magnetic properties of CuIn1-xTxTe2 (T=Co,Mn)

    NASA Astrophysics Data System (ADS)

    Guo, Yongquan; Li, Shuai; Wang, Tai; Xie, Nana

    2017-08-01

    The crystal structures, magnetic and optical properties of the 3d transition metals of Co or Mn doped CuInTe2 have been investigated using X-ray diffraction, magnetic measurements, ultraviolet and visible spectrophotometers. It is found that CuIn1-xTxTe2 (T=Co, Mn) crystallize in tetragonal chalcopyrite structure in a doping range of x=0-0.2. The structural analyses show that the 3d transition metal of Mn or Co prefers to occupy the 4b crystal position. Mn-doped CuIn1-xMnxTe2 (x=0-0.3) show paramagnetic characteristics at room temperature with the susceptibilities of about 10-5. However, lightly Co-doping into CuIn1-xCoxTe2 shows ferromagnetism at room temperature under a low applied field. This phenomenon is suggested to result from the spin-spin interactions between Co atoms which lead to the ferromagnetism. CuIn0.9Co0.1Te2 with ferromagnetism at room temperature under a low field revealed in this work indicates that it a good candidate for photovoltaic cells application since its bandgap matches well with that of CuIn1-xGaxSe2 with high conversion efficiency.

  15. Low Temperature Spin-glass Behavior in Nonmagnetic Atom Disorder Compound Pr2CuIn3

    NASA Astrophysics Data System (ADS)

    Li, Dexin; Homma, Yoshiya; Honda, Fuminori; Yamamura, Tomoo; Aoki, Dai

    We present the experimental results of ac and dc susceptibility, magnetization, magnetic relaxation, specific heat and electrical resistivity for hexagonal CaIn2-type polycrystalline Pr2CuIn3. Spin-glass state is confirmed to form in this system with a spin freezing temperature Tf∼5.4 K. The frequency dependent cusp in ac susceptibility, the evident irreversible magnetism and long-time magnetic relaxation behavior, and the absence of visible anomaly in temperature dependences of specific heat and electrical resistivity are the typical features characteristic of the spin-glass behaviors. A dynamical analysis of the ac susceptibility data gives further evidence for the spin-glass state in Pr2CuIn3. Formation of spin-glass state in Pr2CuIn3 seems to originate from the continued site randomness of the non-magnetic elements, which introduce the random distribution of exchange interactions between Pr atoms.

  16. Influence of surface states of CuInS2 quantum dots in quantum dots sensitized photo-electrodes

    NASA Astrophysics Data System (ADS)

    Peng, Zhuoyin; Liu, Yueli; Wu, Lei; Zhao, Yinghan; Chen, Keqiang; Chen, Wen

    2016-12-01

    Surface states are significant factor for the enhancement of electrochemical performance in CuInS2 quantum dot sensitized photo-electrodes. DDT, OLA, MPA, and S2- ligand capped CuInS2 quantum dot sensitized photo-electrodes are prepared by thermolysis, solvethermal and ligand-exchange processes, respectively, and their optical properties and photoelectrochemical properties are investigated. The S2- ligand enhances the UV-vis absorption and electron-hole separation property as well as the excellent charge transfer performance of the photo-electrodes, which is attributed to the fact that the atomic S2- ligand for the interfacial region of quantum dots may improve the electron transfer rate. These S2--capped CuInS2 quantum dot sensitized photo-electrodes exhibit the excellent photoelectrochemical efficiency and IPCE peak value, which is higher than that of the samples with DDT, OLA and MPA ligands.

  17. Crystallographic and optical properties and band structures of CuInSe2, CuIn3Se5, and CuIn5Se8 phases in Cu-poor Cu2Se-In2Se3 pseudo-binary system

    NASA Astrophysics Data System (ADS)

    Maeda, Tsuyoshi; Gong, Weiyan; Wada, Takahiro

    2016-04-01

    We prepared CuInSe2 and Cu-poor Cu-In-Se (CIS) phases such as CuIn3Se5 and CuIn5Se8 in the composition of (1 - x)Cu2Se-(x)In2Se3 with 0.5 ≤ x ≤ 1.0. The crystal structure of the sample changed from chalcopyrite-type CuInSe2 to hexagonal CuIn5Se8 through stannite-type CuIn3Se5 with increasing x (decreasing Cu/In ratio). The band-gap energies of Cu-poor CIS samples, i.e., CuIn3Se5 (1.17 eV) and CuIn5Se8 (1.22-1.24 eV), are larger than that of chalcopyrite-type CuInSe2 (0.99 eV). The energy levels of the valence band maxima (VBMs) were estimated from the ionization energy by photoemission yield spectroscopy (PYS) measurements. The energy levels of the VBMs of the Cu-poor CIS samples decrease rapidly with decreasing Cu/In ratio. The ionization energy of stannite-type CuIn3Se5 is 0.4 eV larger than that of chalcopyrite-type CuInSe2. The ionization energy of CuIn5Se8 is 0.1-0.3 eV larger than that of CuIn3Se5. These results show that the energy position of the VBM from the vacuum level of Cu-poor CIS phases, such as CuIn3Se5 and CuIn5Se8, is deeper than that of CuInSe2. To understand the electronic structure of Cu-poor CIS compounds, we performed first-principles band structure calculations on stannite-type CuIn5Se8 and a reference compound, tetragonal chalcopyrite-type CuInSe2, using the HSE06 nonlocal screened hybrid density functional. The calculated band-gap energy of tetragonal stannite-type CuIn5Se8 (1.19 eV) is larger than that of chalcopyrite-type CuInSe2 (0.94 eV).

  18. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires.

    PubMed

    Zhao, Yu; Li, Hui; Zhu, Yan-Yan; Guan, Lei-Lei; Li, Yan-Li; Sun, Jian; Ying, Zhi-Feng; Wu, Jia-Da; Xu, Ning

    2014-01-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b.

  19. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    PubMed Central

    2014-01-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:25520597

  20. Structural, optical and photoelectrochemical properties of CuIn3Se5

    NASA Astrophysics Data System (ADS)

    Djellal, L.; Bouguelia, A.; Trari, M.

    2008-04-01

    The morphology, optical characterization and transport properties of dense material CuIn3Se5 have been reported. CuIn3Se5 was synthesized by the fusion technique in a sealed quartz ampoule. The ingots were polycrystalline and the phase crystallizes in a P-chalcopyrite structure. The XRD pattern confirms the formation of the ordered vacancy compound. The composition (Cu = 13.3 at%, In = 31.5 at%, Se = 55.2 at%), established by energy dispersive spectroscopy, is close to the stoichiometric formulation. A band gap of 1.19 eV has been obtained from the diffuse reflectance spectrum. CuIn3Se5 exhibits semi-conducting behavior with an activation energy of 0.52 eV. The thermal variation of the thermopower indicates that the charge carriers are electrons and the conduction occurs predominantly by small polaron hopping. The dissolution rate, determined through dissolved copper, was found to be 1.2 µmol m-2/year in the KCl electrolyte. The results give deeper insights into the photoelectrochemical properties investigated for the first time on the dense material. The capacitance measurement indicates linear behavior from which a flat band potential Vfb of -0.22 VSCE and a doping density ND of 3.75 × 1016 cm-3 were determined. The energy band diagram shows the potentiality for solar energy conversion. The complex impedance pattern is circular in the low frequency region and tends to a straight line in the high frequency one, attributed to the ionic diffusion.

  1. Polyol-mediated synthesis of porous nanocrystalline CuInS 2 foam

    NASA Astrophysics Data System (ADS)

    Shen, Guozhen; Chen, Di; Tang, Kaibin; Fang, Zhen; Sheng, Jie; Qian, Yitai

    2003-06-01

    A rapid and convenient polyol method has been proposed to synthesize foam-like CuInS 2 nanocrystalline with extended, sponge-like, porous structure by refluxing CuCl 2·2H 2O, InCl 3·4H 2O and thiourea (Tu) in ethylene glycol at 195°C for 1 h. Studies found that the agitation state and the ratio of CuCl 2 to InCl 3 have great influence on the purity of the final products.

  2. Effects of europium substitution for In on structure and photoelectric properties of CuIn1-xEuxTe2

    NASA Astrophysics Data System (ADS)

    Nie, Xiaomeng; Guo, Yongquan

    2016-01-01

    The structures and optical and electric properties of europium doped CuIn1-xEuxTe2 have been studied systematically using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive spectrum (EDS), ultraviolet and visible spectrophotometer (UV-vis), and standard four-probe method. The studies reveal that the minor europium doping into CuIn1-xEuxTe2 could still stabilize the chalcopyrite structure in a solid solution of x=0.1. The lattice parameters are going up with increasing the content of europium in CuIn1-xEuxTe2 due to the size effect at In site. The structural refinement confirms that Eu partly substitutes for In and occupies the 4b crystal position. SEM morphologies show that the europium doping into CuIn1-xEuxTe2 can fine the grains from the largely agglomerated state to the uniformly separated state. The electrical resistivities of single phase CuIn1-xEuxTe2 follow a mixture model of hopping conductivity and variable range hopping conductivity. The absorption band-gaps of CuIn1-xEuxTe2 at room temperature tend to increase with increasing Eu content. CuIn1-xEuxTe2 might be a good candidate for photovoltaic cell.

  3. Preparation of monolithic cu(In0.7Ga0.3)Se2 nanopowders and subsequent fabrication of sintered CIGS films.

    PubMed

    Song, Bong-Geun; Jung, Jae Hee; Bae, Gwi-Nam; Park, Hyung-Ho; Park, Jong-Ku; Cho, So-Hye

    2013-09-01

    Cu(In,Ga)Se2 (CIGS) is a compound semiconductor and is one of the most attractive light-absorbing materials for use in thin film solar cells. Among the various approaches to prepare CIGS thin films, the powder process offers an extremely simple and materials-efficient method. Here, we report the mechano-chemical preparation of CIGS compound powders suitable for fabrication of CIGS films by a powder process. We found that the CIGS phase was formed from the elemental powders of Cu, In, and Se and liquid Ga using high energy milling process with a milling time as short as 40 min at 200 rpm due to a self-accelerating exothermic reaction. The morphology and size of the CIGS powders changed with a function of the milling speed (100-300 rpm), leading to an optimal condition of milling at 200 rpm for 120 min. We also found that it was difficult to obtain a monolithic phase of the CIGS powders without severe particle aggregation by mechano-chemical milling alone. Therefore, in combination with the milling, subsequent heat-treatment at 300 degrees C was performed, which successfully provided monolithic CIGS nanopowders suitable for powder process. When a thin film was fabricated from the monolithic CIGS nanopowders, a highly dense film with large crystalline grains was obtained. The CIGS film preserved its chemical composition of CuIn0.7Ga0.3Se2 after sintering as evidenced by Raman spectroscopy, EDS and SAED pattern of transmission electron microscopy. The film was also found suitable for a light absorbing layer of CIGS solar cells with its band gap energy of 1.14 eV evaluated by transmittance spectroscopy.

  4. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  5. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  6. One-pot synthesis of CuInS2 nanocrystals using different anions to engineer their morphology and crystal phase.

    PubMed

    Tang, Aiwei; Hu, Zunlan; Yin, Zhe; Ye, Haihang; Yang, Chunhe; Teng, Feng

    2015-05-21

    A simple one-pot colloidal method has been described to engineer ternary CuInS2 nanocrystals with different crystal phases and morphologies, in which dodecanethiol is chosen as the sulfur source and the capping ligands. By a careful choice of the anions in the metal precursors and manipulation of the reaction conditions including the reactant molar ratios and the reaction temperature, CuInS2 nanocrystals with chalcopyrite, zincblende and wurtzite phases have been successfully synthesized. The type of anion in the metal precursors has been found to be essential for determining the crystal phase and morphology of the as-obtained CuInS2 nanocrystals. In particular, the presence of Cl(-) ions plays an important role in the formation of CuInS2 nanoplates with a wurtzite-zincblende polytypism structure. In addition, the molar ratios of Cu to In precursors have a significant effect on the crystal phase and morphology, and the intermediate Cu2S-CuInS2 heteronanostructures are formed which are critical for the anisotropic growth of CuInS2 nanocrystals. Furthermore, the optical absorption results of the as-obtained CuInS2 nanocrystals exhibit a strong dependence on the crystal phase and size.

  7. The interaction of CuInS2 /ZnS/TGA quantum dots with tyrosine kinase inhibitor and its application.

    PubMed

    Liao, Shenghua; Huang, Yu; Zuo, Jiaxin; Yan, Zhengyu

    2015-05-01

    The interactions between thioglycolic acid-capped-CuInS2 /ZnS quantum dots (CuInS2 /ZnS/TGA QDs) and tyrosine kinase inhibitor (TKI) were investigated using fluorescence, ultraviolet-visible spectrometry and Fourier transform infrared spectrometry. The results indicated that the fluorescence intensity of CuInS2 /ZnS/TGA could be quenched by imatinib, dasatinib, nilotinib, gefitinib and erlotinib, which hinted that CuInS2 /ZnS/TGA QDs could be used in the detection of TKI in active pharmaceutical ingredients (API). Calibration curves showed good linear correlation and low detection limits. The average recovery was between 98 and 102%. Moreover, the nature of the fluorescence quenching mechanism of CuInS2 /ZnS/TGA QDs by TKI was discussed. A ground state complex was formed by hydrogen bonding between the carboxyl group of CuInS2 /ZnS/TGA QDs and the amino group of TKI. This led to an increase in non-radiative transition and fluorescence quenching of CuInS2 /ZnS/TGA QDs. Copyright © 2014 John Wiley & Sons, Ltd.

  8. Towards depleted heterojunction solar cells with CuInS2 and ZnO nanocrystals

    NASA Astrophysics Data System (ADS)

    Scheunemann, Dorothea; Wilken, Sebastian; Parisi, Jürgen; Borchert, Holger

    2013-09-01

    Colloidal quantum dot solar cells have shown remarkable improvements in performance during the last few years. Until now, mostly Pb- or Cd-based nanocrystals were used as absorber material, which might limit the potential application of nanocrystal solar cells due to toxicity issues. A promising, potentially less-toxic alternative are CuInS2 (CIS) nanocrystals. Here, we report about the realization of solar cells based on a heterojunction formed by solution-producible layers of colloidal CIS and ZnO nanocrystals. Device performance was found to be sensitive to illumination conditions, i.e., the presence of UV light. Although, power conversion efficiencies remain limited in this work, we modeled the possible photocurrents and show that the CIS nanocrystals have a high potential for light-harvesting in quantum dot solar cells.

  9. Enhanced Optical Properties of Cu-In-S Quantum Dots with Zn Addition

    NASA Astrophysics Data System (ADS)

    Chi, Tran Thi Kim; Thuy, Ung Thi Dieu; Huyen, Tran Thi Thuong; Thuy, Nguyen Thi Minh; Le, Nguyen Thi; Liem, Nguyen Quang

    2016-05-01

    Quaternary Cu-In-Zn-S (CIZS) alloy quantum dots (QDs) have been chemically synthesized by a hydrothermal method at 120°C and heating-up method using diesel as a high-boiling-point reaction solvent at 220°C. The resulting CuInS2 (CIS) QDs with small Zn addition of 10% into the precursors possessed tetragonal structure, spherical morphology, and small size of 3 nm, as characterized by x-ray diffraction (XRD) analysis, Raman spectroscopy, and high-resolution transmission electron microscopy (HR-TEM). The absorption (Abs) and photoluminescence (PL) spectra of the CIZS alloy QDs both shifted to shorter wavelength (higher energy) in comparison with CIS QDs. The absorption edge and PL peak of the CIZS alloy QDs shifted to shorter wavelength, and the corresponding intensity increased with decreasing temperature in the range of 15 K to 300 K.

  10. Chemical treatment and Fermi-level pinning of CuInS2 and InP photocathodes

    NASA Astrophysics Data System (ADS)

    Lewerenz, H. J.; Goslowsky, H.

    1988-04-01

    The dependence of the photovoltage, V(Ph), in the p-CuInS2/V(2+)-V(3+) and p-InP/V(2+)-V(3+) solar cells on the redox potential E of the vanadium solution was investigated for different surface conditions of the P-CuInS2 and p-InP. Samples were etched by immersion, for varying times, into a 2:1:1 mixture of H2O-30 percent H2O2-conc. H2SO4 (for CuInS2) or of H2O-HCl-HNO3 (for InP). Etching and chemisorption were found to successively improve CuInS2 photovoltages, resulting in a slope of about 1 in the V(Ph) vs E plots.

  11. Colloidal CuInS2 Quantum Dots as Inorganic Hole-Transporting Material in Perovskite Solar Cells.

    PubMed

    Lv, Mei; Zhu, Jun; Huang, Yang; Li, Yi; Shao, Zhipeng; Xu, Yafeng; Dai, Songyuan

    2015-08-12

    To develop novel hole-transporting materials (HTMs) is an important issue of perovskite solar cells (PSCs), especially favoring the stability improvement and the cost reduction. Herein, we use ternary quantum dots (QDs) as HTM in mesoporous TiO2/CH3NH3PbI3/HTM/Au solar cell, and modify the surface of CuInS2 QDs by cation exchange to improve the carrier transport. The device efficiency using CuInS2 QDs with a ZnS shell layer as HTM is 8.38% under AM 1.5, 100 mW cm(-2). The electrochemical impedance spectroscopy suggested that the significantly enhanced performance is mainly attributed to the reduced charge recombination between TiO2 and HTM. It paves a new pathway for the future development of cheap inorganic HTMs for the high efficiency PSCs.

  12. Structure and magnetic properties of RE2CuIn 3 ( RE=Ce, Pr, Nd, Sm and Gd)

    NASA Astrophysics Data System (ADS)

    Tyvanchuk, Yuriy B.; Szytuła, Andrzej; Zarzycki, Arkadiusz; Rodewald, Ute Ch.; Kalychak, Yaroslav M.; Pöttgen, Rainer

    2008-12-01

    The ternary copper indides RE2CuIn 3≡ RECu 0.5In 1.5 ( RE=Ce, Pr, Nd, Sm and Gd) were synthesized from the elements in sealed tantalum tubes in an induction furnace. They crystallize with the CaIn 2-type structure, space group P6 3/ mmc, with a statistical occupancy of copper and indium on the tetrahedral substructure. These indides show homogeneity ranges RECu xIn 2-x. Single crystal structure refinements were performed for five crystals: CeCu 0.66In 1.34 ( a=479.90(7) pm, c=768.12(15) pm), PrCu 0.52In 1.48 ( a=480.23(7) pm, c=759.23(15) pm), NdCu 0.53In 1.47 ( a=477.51(7) pm, c=756.37(15) pm), SmCu 0.46In 1.54 ( a=475.31(7) pm, c=744.77(15) pm), and GdCu 0.33In 1.67 ( a=474.19(7), c=737.67(15) pm). Temperature-dependent susceptibility measurements show antiferromagnetic ordering at TN=4.7 K for Pr 2CuIn 3 and Nd 2CuIn 3 and 15 K for Sm 2CuIn 3. Fitting of the susceptibility data of the samarium compound revealed an energy gap Δ E=39.7(7) K between the ground and the first excited levels.

  13. CuInSe2 films and solar cells obtained by selenization of evaporated Cu-In layers

    NASA Astrophysics Data System (ADS)

    Basol, Bulent M.; Kapur, Vijay K.

    1989-05-01

    CuInSe2 films of various stoichiometries have been prepared by the two-stage process. In this method, Cu-In layers were first evaporated onto Mo-coated glass substrates in the form of stacks, and then they were selenized in a H2Se atmosphere at 400 °C to form the compound. CdZnS/CuInSe2 heterojunction solar cells were fabricated on these films and conversion efficiencies close to 7% were obtained.

  14. Small GSH-Capped CuInS2 Quantum Dots: MPA-Assisted Aqueous Phase Transfer and Bioimaging Applications.

    PubMed

    Zhao, Chuanzhen; Bai, Zelong; Liu, Xiangyou; Zhang, Yijia; Zou, Bingsuo; Zhong, Haizheng

    2015-08-19

    An efficient ligand exchange strategy for aqueous phase transfer of hydrophobic CuInS2/ZnS quantum dots was developed by employing glutathione (GSH) and mercaptopropionic acid (MPA) as the ligands. The whole process takes less than 20 min and can be scaled up to gram amount. The material characterizations show that the final aqueous soluble samples are solely capped with GSH on the surface. Importantly, these GSH-capped CuInS2/ZnS quantum dots have small size (hydrodynamic diameter <10 nm), moderate fluorescent properties (up to 34%) as well as high stability in aqueous solutions (stable for more than three months in 4 °C without any significant fluorescence quenching). Moreover, this ligand exchange strategy is also versatile for the aqueous phase transfer of other hydrophobic quantum dots, for instance, CuInSe2 and CdSe/ZnS quantum dots. We further demonstrated that GSH-capped quantum dots could be suitable fluorescence markers to penetrate cell membrane and image the cells. In addition, the GSH-capped CuInS2 quantum dots also have potential use in other fields such as photocatalysis and quantum dots sensitized solar cells.

  15. Nearly monodisperse CuInS2 hierarchical microarchitectures for photocatalytic H2 evolution under visible light.

    PubMed

    Zheng, Lei; Xu, Yang; Song, Yan; Wu, Changzheng; Zhang, Miao; Xie, Yi

    2009-05-04

    An enhanced visible-light-driven photocatalyst, CuInS(2), was prepared by a facile in situ formed template solvothermal route. The products show complex hierarchical architectures assembled from interleaving two-dimensional microcrystals and near monodispersity. It is interesting to see revealed a phase conversion process from binary sulfide to ternary sulfide as well as morphology evolution, investigated by X-ray diffraction and scanning electron microscopy. The involved CuS hierarchitectures form in situ and then act as the self-sacrificed templates, resulting in the obtained CuInS(2) inheriting the hierarchical architectures and monodispersity. More importantly, a much higher average hydrogen yield of 59.4 micromol/h for 1.0 g of photocatalyst under visible light irradiation than in the previously reported results has been attained over the obtained CuInS(2) hierarchitectures loaded with cocatalyst Pt, which may be due to the benefits inheriting from CuS templates such as monodispersity, high surface area, and permeability for providing sufficient visible light response and more reaction sites for photocatalysis in aqueous solution.

  16. Facile synthesis of near-infrared CuInS2/ZnS quantum dots and glycol-chitosan coating for in vivo imaging

    NASA Astrophysics Data System (ADS)

    Kim, Eun-Mi; Lim, Seok Tae; Sohn, Myung-Hee; Jeong, Hwan-Jeong

    2017-07-01

    This study describes the synthesis method of water-soluble, low-toxicity, photostable highly luminescent probes based on I-III-VI2 type semiconductor quantum dots (QDs) and the possibility of tumor targeting in living animals. Cd-free high-quality CuInS2/ZnS core/shell QDs were synthesized, and their surfaces were reacted with mercaptoundecanoic acid for aqueous phase transfer followed by reaction with glycol-chitosan; lastly, Arg-Gly-Asp (RGD) integrin-binding peptide was covalently attached for in vivo tumor targeting. Dowtherm A, a highly viscous heat-transfer organic fluid, was used to control semiconductor crystal growth at high temperature (>230 °C) during organic synthesis. The structural and optical properties of the resulting CuInS2/ZnS QDs were investigated. The average diameters of CuInS2 and CuInS2/ZnS QDs were 3.0 and 3.7 nm, respectively. Cell toxicity and in vivo tumor targetability in RR1022 cancer cell-xenografted mice were further evaluated using cRGDyk-tagged glycol-chitosan-coated CuInS2/ZnS QDs. Glycol-chitosan-coated MUA-QDs displayed a Z-average diameter of 203.8 ± 7.67 nm in water by dynamic light scattering.

  17. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots.

    PubMed

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-12-08

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.

  18. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots

    NASA Astrophysics Data System (ADS)

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-12-01

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.

  19. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots

    PubMed Central

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-01-01

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy. PMID:26642815

  20. Improved Device Performance of Polymer-CuInS2/TiO2 Solar Cells Based on Treated CuInS2 Quantum Dots

    NASA Astrophysics Data System (ADS)

    Yue, Wenjin; Xie, Zhongwen; Pan, Yuwen; Zhang, Guoqiang; Wang, Songming; Xu, Fei; Yao, Cheng; Hu, Lingling; Li, Dan; Yang, Xing; Song, Qinping; Huang, Fangzhi

    2015-10-01

    This paper describes a solvothermal approach to remove the organic amine ligand on the surface of CuInS2 quantum dots (QDs) and demonstrates improved device performance of ternary polymer-CuInS2/TiO2 solar cells. Surface treatment of the CuInS2 QDs was carried out using different treatment methods, agents, and reaction times. Results showed that most of the amine ligands could be removed using hexanoic acid as the treatment agent by the solvothermal method in 16 h; the treated CuInS2 QDs displayed an aggregation tendency and quenched the fluorescence of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) more effectively. As a result, MEH-PPV-CuInS2/TiO2 solar cells based on the treated CuInS2 QDs showed much higher device performance than those containing pristine CuInS2 QDs, achieving efficiency of 2.02% under AM1.5 illumination.

  1. Third-order nonlinear optical response of CuInS2 quantum dots—Bright probes for near-infrared biodetection

    NASA Astrophysics Data System (ADS)

    Cichy, B.; Wawrzynczyk, D.; Bednarkiewicz, A.; Samoc, M.; Strek, W.

    2013-06-01

    Nonlinear refraction and nonlinear absorption in stoichiometric colloidal CuInS2 quantum dots, with absorption edge tuned up to the visible spectral region, were investigated. The nonlinear optical response of the quantum dots was measured in a wide range of wavelengths (700-1600 nm) using the Z-scan technique. The measurements revealed the presence of two-photon absorption in the near-infrared range and the negative nonlinear refraction in almost whole spectral range for all the investigated nanoparticles. The cubic nonlinearity of CuInS2 quantum dots is discussed in terms of defect-related optical properties of the material. The results indicate that CuInS2 quantum dots may be an interesting material for the single and multiphoton luminescence bio-detection techniques.

  2. Reduced Carrier Recombination in PbS - CuInS2 Quantum Dot Solar Cells.

    PubMed

    Sun, Zhenhua; Sitbon, Gary; Pons, Thomas; Bakulin, Artem A; Chen, Zhuoying

    2015-05-29

    Energy loss due to carrier recombination is among the major factors limiting the performance of TiO2/PbS colloidal quantum dot (QD) heterojunction solar cells. In this work, enhanced photocurrent is achieved by incorporating another type of hole-transporting QDs, Zn-doped CuInS2 (Zn-CIS) QDs into the PbS QD matrix. Binary QD solar cells exhibit a reduced charge recombination associated with the spatial charge separation between these two types of QDs. A ~30% increase in short-circuit current density and a ~20% increase in power conversion efficiency are observed in binary QD solar cells compared to cells built from PbS QDs only. In agreement with the charge transfer process identified through ultrafast pump/probe spectroscopy between these two QD components, transient photovoltage characteristics of single-component and binary QDs solar cells reveal longer carrier recombination time constants associated with the incorporation of Zn-CIS QDs. This work presents a straightforward, solution-processed method based on the incorporation of another QDs in the PbS QD matrix to control the carrier dynamics in colloidal QD materials and enhance solar cell performance.

  3. Reduced Carrier Recombination in PbS - CuInS2 Quantum Dot Solar Cells

    PubMed Central

    Sun, Zhenhua; Sitbon, Gary; Pons, Thomas; Bakulin, Artem A.; Chen, Zhuoying

    2015-01-01

    Energy loss due to carrier recombination is among the major factors limiting the performance of TiO2/PbS colloidal quantum dot (QD) heterojunction solar cells. In this work, enhanced photocurrent is achieved by incorporating another type of hole-transporting QDs, Zn-doped CuInS2 (Zn-CIS) QDs into the PbS QD matrix. Binary QD solar cells exhibit a reduced charge recombination associated with the spatial charge separation between these two types of QDs. A ~30% increase in short-circuit current density and a ~20% increase in power conversion efficiency are observed in binary QD solar cells compared to cells built from PbS QDs only. In agreement with the charge transfer process identified through ultrafast pump/probe spectroscopy between these two QD components, transient photovoltage characteristics of single-component and binary QDs solar cells reveal longer carrier recombination time constants associated with the incorporation of Zn-CIS QDs. This work presents a straightforward, solution-processed method based on the incorporation of another QDs in the PbS QD matrix to control the carrier dynamics in colloidal QD materials and enhance solar cell performance. PMID:26024021

  4. Investigations of CuInSe sub 2 thin films and contacts

    SciTech Connect

    Nicolet, M.A. )

    1991-10-01

    This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

  5. Bio-compatibility and cytotoxicity studies of water-soluble CuInS2-ZnS-AFP fluorescence probe in liver cancer cells.

    PubMed

    Yang, Ming-Ya; Hong, Jian; Zhang, Yan; Gao, Zhen; Jiang, Tong-Tong; Song, Jiangluqi; Xu, Xiao-Liang; Zhu, Li-Xin

    2016-08-01

    The oncogenesis of hepatocellular carcinoma (HCC) is not clear. The current methods of the pertinent studies are not precise and sensitive. The present study was to use liver cancer cell line to explore the bio-compatibility and cytotoxicity of ternary quantum dots (QDs) probe and to evaluate the possible application of QDs in HCC. CuInS2-ZnS-AFP fluorescence probe was designed and synthesized to label the liver cancer cell HepG2. The cytotoxicity of CuInS2-ZnS-AFP probe was evaluated by MTT experiments and flow cytometry. The labeling experiments indicated that CuInS2-ZnS QDs conjugated with AFP antibody could enter HepG2 cells effectively and emit intensive yellow fluorescence by ultraviolet excitation without changing cellular morphology. Toxicity tests suggested that the cytotoxicity of CuInS2-ZnS-AFP probe was significantly lower than that of CdTe-ZnS-AFP probe (t test, F=0.8, T=-69.326, P<0.001). For CuInS2-ZnS-AFP probe, time-effect relationship was presented in intermediate concentration (>20%) groups (P<0.05) and dose-effect relationship was presented in almost all of the groups (P<0.05). CuInS2-ZnS-AFP QDs probe had better bio-compatibility and lower cytotoxicity compared with CdTe-ZnS-AFP probe, and could be used for imaging the living cells in vitro.

  6. Self-organized antireflection CuIn(S,Se)2 nano-protrusions on flexible substrates by ion erosion based on CuInS2 nanocrystal precursor inks

    NASA Astrophysics Data System (ADS)

    Yen, Yu-Ting; Wang, Yi-Chung; Chen, Chia-Wei; Tsai, Hung-Wei; Chen, Yu-Ze; Hu, Fan; Chueh, Yu-Lun

    2015-11-01

    In this work, an approach to achieve surface nano-protrusions on a chalcopyrite CuIn(S,Se)2 thin film was demonstrated. Home-made CuInS2 nanocrystals with average diameter of 20 nm were prepared and characterized. By applying ion erosion process on the CuIn(S,Se)2 film, large-area self-aligned nano-protrusions can be formed. Interestingly, the process can be applied on flexible substrate where the CuIn(S,Se)2 film remains intact with no visible cracking after several bending tests. In addition, reflectance spectra reveal the extraordinary anti-reflectance characteristics of nano-protrusions on the CuIn(S,Se)2 film with the incident light from 350 to 2000 nm. A 36-cm2 CuIn(S,Se)2 film with nano-protrusions on flexible molybdenum foil substrate has been demonstrated, which demonstrated the feasibility of developing low cost with a high optical absorption CuIn(S,Se)2 flexible thin film.

  7. Synthesis of eco-friendly CuInS2 quantum dot-sensitized solar cells by a combined ex situ/in situ growth approach.

    PubMed

    Chang, Chia-Chan; Chen, Jem-Kun; Chen, Chih-Ping; Yang, Cheng-Hsien; Chang, Jia-Yaw

    2013-11-13

    A cadmium-free CuInS2 quantum dot (QD)-sensitized solar cell (QDSC) has been fabricated by taking advantage of the ex situ synthesis approach for fabricating highly crystalline QDs and the in situ successive ionic-layer adsorption and reaction (SILAR) approach for achieving high surface coverage of QDs. The ex situ synthesized CuInS2 QDs can be rendered water soluble through a simple and rapid two-step method under the assistance of ultrasonication. This approach allows a stepwise ligand change from the insertion of a foreign ligand to ligand replacement, which preserves the long-term stability of colloidal solutions for more than 1 month. Furthermore, the resulting QDs can be utilized as sensitizers in QDSCs, and such a QDSC can deliver a power conversion efficiency (PCE) of 0.64%. Using the SILAR process, in situ CuInS2 QDs could be preferentially grown epitaxially on the pre-existing seeds of ex situ synthesized CuInS2 QDs. The results indicated that the CuInS2 QDSC fabricated by the combined ex situ/in situ growth process exhibited a PCE of 1.84% (short-circuit current density = 7.72 mA cm(-2), open-circuit voltage = 570 mV, and fill factor = 41.8%), which is higher than the PCEs of CuInS2 QDSCs fabricated by ex situ and in situ growth processes, respectively. The relative efficiencies of electrons injected by the combined ex situ/in situ growth approach were higher than those of ex situ synthesized CuInS2 QDs deposited on TiO2 films, as determined by emission-decay kinetic measurements. The incident photon-to-current conversion efficiency has been determined, and electrochemical impedance spectroscopy has been carried out to investigate the photovoltaic behavior and charge-transfer resistance of the QDSCs. The results suggest that the combined synergetic effects of in situ and ex situ CuInS2 QD growth facilitate more electron injection from the QD sensitizers into TiO2.

  8. Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

    NASA Technical Reports Server (NTRS)

    Kasick, Michael P.

    2004-01-01

    Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between

  9. Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

    NASA Technical Reports Server (NTRS)

    Kasick, Michael P.

    2004-01-01

    Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between

  10. Synthesis of hexagonal structured wurtzite and chalcopyrite CuInS2 via a simple solution route

    PubMed Central

    2011-01-01

    Wurtzite semiconductor CuInS2 [CIS] has been reported in recent years. As a kind of metastable structure, it is a great challenge to synthesize pure wurtzite CIS at low temperature. In this paper, via a simple and quick solution route, we synthesize both wurtzite- and chalcopyrite-structure CIS. Well-controlled wurtzite CIS hexagonal plates are obtained when an appropriate agent is added. The influence of the used agent triethanolamine [TEA] has also been studied, and it turns out that without TEA, chalcopyrite CIS with a kind of rare morphology is formed through this method. PMID:22027183

  11. Thin-Layer Electrochemical Studies in the Development of a Cycle for the Formation of CdInSe2 by Electrochemical ALE.

    DTIC Science & Technology

    1996-06-22

    A thin-layer electrochemical cell (TLEC) was used in the development of a method for the electrodeposition of CuInSe2. Underpotential deposition (UPD...the complexing agent The information obtained in this study is intended to facilitate the development of an Electrochemical ALE cycle for the deposition ...of CuInS2. Future work will involve studies using an automated flow cell deposition system.

  12. Effect of tellurium deposition rate on the properties of Cu-In-Te based thin films and solar cells

    NASA Astrophysics Data System (ADS)

    Mise, Takahiro; Nakada, Tokio

    2011-01-01

    To investigate the effects of tellurium (Te) deposition rate on the properties of Cu-In-Te based thin films (Cu/In=0.30-0.31), the films were grown on both bare and Mo-coated soda-lime glass substrates at 200 °C by co-evaporation using a molecular beam epitaxy system. The microstructural properties were examined by means of scanning electron microscopy and X-ray diffraction. The crystalline quality of the films was improved with increase in the deposition rate of Te, and exhibited a single CuIn 3Te 5 phase with a highly preferred (1 1 2) orientation. Te-deficient film (Te/(Cu+In)=1.07) grown with a low Te deposition rate showed a narrow bandgap of 0.99 eV at room temperature. The solar cell performance was affected by the deposition rate of Te. The best solar cell fabricated using CuIn 3Te 5 thin films grown with the highest deposition rate of Te (2.6 nm/s) yielded a total area (0.50 cm 2) efficiency of 4.4% ( Voc=309 mV, Jsc=28.0 mA/cm 2, and FF=0.509) without light soaking.

  13. Pulsed laser deposition of CuInS2 quantum dots on one-dimensional TiO2 nanorod arrays and their photoelectrochemical characteristics

    NASA Astrophysics Data System (ADS)

    Han, Minmin; Chen, Wenyuan; Guo, Hongjian; Yu, Limin; Li, Bo; Jia, Junhong

    2016-06-01

    In the typical solution-based synthesis of colloidal quantum dots (QDs), it always resorts to some surface treatment, ligand exchange processing or post-synthesis processing, which might involve some toxic chemical regents injurious to the performance of QD sensitized solar cells. In this work, the CuInS2 QDs are deposited on the surface of one-dimensional TiO2 nanorod arrays by the pulsed laser deposition (PLD) technique. The CuInS2 QDs are coated on TiO2 nanorods without any ligand engineering, and the performance of the obtained CuInS2 QD sensitized solar cells is optimized by adjusting the laser energy. An energy conversion efficiency of 3.95% is achieved under one sun illumination (AM 1.5, 100 mW cm-2). The improved performance is attributed to enhanced absorption in the longer wavelength region, quick interfacial charge transfer and few chance of carrier recombination with holes for CuInS2 QD-sensitized solar cells. Moreover, the photovoltaic device exhibits high stability in air without any specific encapsulation. Thus, the PLD technique could be further applied for the fabrication of QDs or other absorption materials.

  14. Bright CuInS2/CdS nanocrystal phosphors for high-gain full-spectrum luminescent solar concentrators.

    PubMed

    Knowles, Kathryn E; Kilburn, Troy B; Alzate, Dane G; McDowall, Stephen; Gamelin, Daniel R

    2015-06-04

    The performance of colloidal CuInS2/CdS nanocrystals as phosphors for full-spectrum luminescent solar concentrators has been examined. Their combination of large solar absorption, high photoluminescence quantum yields, and only moderate reabsorption produces the highest projected flux gains of any nanocrystal luminophore to date.

  15. CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization

    PubMed Central

    2012-01-01

    CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm−2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated fabrication procedures and introduction of a linker molecule. PMID:23181940

  16. A High-Yield Synthesis of Chalcopyrite CuIn S 2 Nanoparticles with Exceptional Size Control

    DOE PAGES

    Sun, Chivin; Gardner, Joseph S.; Shurdha, Endrit; ...

    2009-01-01

    We repormore » t high-yield and efficient size-controlled syntheses of Chalcopyrite CuIn S 2 nanoparticles by decomposing molecular single source precursors (SSPs) via microwave irradiation in the presence of 1,2-ethanedithiol at reaction temperatures as low as 100 ° C and times as short as 30 minutes. The nanoparticles sizes were 1.8 nm to 10.8 nm as reaction temperatures were varied from 100 ° C to 200 ° C with the bandgaps from 2.71 eV to 1.28 eV with good size control and high yields (64%–95%). The resulting nanoparticles were analyzed by XRD, UV-Vis, ICP-OES, XPS, SEM, EDS, and HRTEM. Titration studies by 1 H NMR using SSP 1 with 1,2-ethanedithiol and benzyl mercaptan were conducted to elucidate the formation of Chalcopyrite CuIn S 2 nanoparticles.« less

  17. Three-dimensional morphology of CuInS2:P3HT hybrid blends for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Krause, Christopher; Scheunemann, Dorothea; Parisi, Jürgen; Borchert, Holger

    2015-11-01

    Despite potential advantages, the performance of hybrid solar cells with colloidal nanocrystals remains low compared to pure organic solar cells, in particular, when Cd- and Pb-free nanocrystals are employed. To understand this discrepancy, we analyzed possible limiting factors of the performance of hybrid solar cells with CuInS2 nanoparticles and the polymer poly(3-hexylthiophene) (P3HT). Optimizing the thickness of the active layer indicated that charge transport limits the performance of the solar cells. Since charge transport is among others influenced by the morphology of the bulk heterojunction layer, we performed a detailed analysis of the blend morphology. Therefore, we used electron tomography which provides three-dimensional information on the interpenetrating network formed by the hybrid CuInS2:P3HT system. Using statistical methods, we analyzed the distribution of the nanoparticles inside the polymer matrix and the structure of the percolation paths. We found that the morphology appears well suited for application in hybrid solar cells, meaning that other factors must be the bottleneck. Therefore, we investigated in a second step the influence of a post-deposition ligand exchange with acetic acid. This strategy resulted in a strong relative improvement of the solar cell performance, although absolute performance parameters remain low in comparison to hybrid solar cells with colloidal cadmium or lead chalcogenide nanocrystals.

  18. CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization.

    PubMed

    Zhou, Zhengji; Yuan, Shengjie; Fan, Junqi; Hou, Zeliang; Zhou, Wenhui; Du, Zuliang; Wu, Sixin

    2012-11-27

    CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm-2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated fabrication procedures and introduction of a linker molecule.

  19. Hierarchical TiO2-CuInS2 core-shell nanoarrays for photoelectrochemical water splitting.

    PubMed

    Guo, Keying; Liu, Zhifeng; Han, Jianhua; Liu, Zhichao; Li, Yajun; Wang, Bo; Cui, Ting; Zhou, Cailou

    2014-08-14

    Hierarchical TiO2-CuInS2 core-shell nanoarrays were fabricated directly on conducting glass substrates (FTO) via facile and low-cost hydrothermal and polyol reduction methods for photoelectrochemical (PEC) water splitting using TiO2 branched nanorod arrays (BNRs) as the reactive framework. An enhanced optical property of the core-shell structure was discovered. Firstly, TiO2 BNRs-CuS core-shell structure was synthesized through successive ionic layer adsorption and reaction (SILAR). Subsequently, TiO2 BNRs-CuInS2 core-shell structure was derived from TiO2 BNRs-CuS core-shell structure. On the basis of optimal thickness of the CuInS2 shell, such a TiO2 BNRs-CuInS2 core-shell structure exhibits higher photocatalytic activity, the photocurrent density and efficiency for hydrogen generation are up to 19.07 mA cm(-2) and 11.48%, respectively, which are probably because of the improved absorption efficiency and the appropriate gradient energy gap structure. The TiO2 BNRs-CuInS2 core-shell structure can be promising building blocks in photoelectrochemical water splitting systems.

  20. Raman scattering and microstructural analysis of polycrystalline CuInS2 films for solar cell devices

    NASA Astrophysics Data System (ADS)

    Perez-Rodriguez, Alejandro; Alvarez-Garcia, J.; Marcos-Ruzafa, J.; Romano-Rodriguez, A.; Morante, Juan R.; Scheer, R.; Klaer, J.; Klenk, R.

    2003-04-01

    The detailed microstructural characterization of CuInS2 (CIS) polycrystalline films is performed by combined in depth MicroRaman scattering/Auger Electron Spectroscopy measurements as a function of the chemical composition and temperature of processing. This has allowed to identify the main secondary phases in the layers as CuIn5S8 for Cu-poor samples and CuS for Cu-rich ones. The presence of such phases is strongly related to the temperature of processing, being secondary phase formation inhibited when the growing temperature decreases from 520°C to 370°C. This is also accompanied by a significant degradation of the structural CIS features, as reflected by the increase in both shift and broadening of the A1 CIS mode in the spectra, and by the decrease of the grain size estimated by cross-section TEM. Besides, Raman spectra measured from samples grown at lower temperatures are characterized by the presence of an additional mode at about 305 cm-1. The presence of this mode in the spectra from Cu-rich samples gives experimental support to its previously proposed structural origin. Finally, MoS2 secondary phase has also been identified at the CIS/Mo interface region, being its occurrence also inhibited at low growing temperatures.

  1. Structural and optical characterization of CuInS2 quantum dots synthesized by microwave-assisted continuous flow methods

    NASA Astrophysics Data System (ADS)

    Fitzmorris, Robert C.; Oleksak, Richard P.; Zhou, Zheng; Mangum, Benjamin D.; Kurtin, Juanita N.; Herman, Gregory S.

    2015-07-01

    Semiconductor quantum dots (QDs) have recently been incorporated into consumer displays and lighting technologies. Now that these materials are being produced on industrial scales, it is important to investigate scalable synthetic methods and less toxic materials and chemistries. To achieve these goals, we have synthesized cadmium-free, visible light-emitting QDs using a microwave-assisted continuous flow reactor. After synthesis, the CuInS2 QD cores underwent a near-complete Zn cation exchange reaction in a batch reactor, followed by the growth of a ZnS shell. Analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data indicate that the crystal structure changes from CuInS2 (chalcopyrite) to ZnS (zincblende) during the cation exchange reaction. Compositional analysis indicated that the core/shell QDs were 98 % ZnS, with Cu and In present at much lower concentrations. The photoluminescence (PL) peak position was blue shifted for longer cation exchange reactions, and it was found that the ZnS shell was necessary for improved PL stability. The synthesized QDs have a PL down conversion efficiency of 65 % when using a blue LED source.

  2. Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process

    DOE PAGES

    Park, Jae -Cheol; Lee, Jeon -Ryang; Al-Jassim, Mowafak; ...

    2016-10-17

    Here we have demonstrated that the bandgap of Cu(In1-xGax)Se2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe2(CIS) and CuGaSe2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyrite phase without any secondary phasemore » such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.« less

  3. Soluble precursors for CuInSe2, CuIn(1-x)Ga(x)Se2, and Cu2ZnSn(S,Se)4 based on colloidal nanocrystals and molecular metal chalcogenide surface ligands.

    PubMed

    Jiang, Chengyang; Lee, Jong-Soo; Talapin, Dmitri V

    2012-03-21

    We report a new platform for design of soluble precursors for CuInSe(2) (CIS), Cu(In(1-x)Ga(x))Se(2) (CIGS), and Cu(2)ZnSn(S,Se)(4) (CZTS) phases for thin-film potovoltaics. To form these complex phases, we used colloidal nanocrystals (NCs) with metal chalcogenide complexes (MCCs) as surface ligands. The MCC ligands both provided colloidal stability and represented essential components of target phase. To obtain soluble precursors for CuInSe(2), we used Cu(2-x)Se NCs capped with In(2)Se(4)(2-) MCC surface ligands or CuInSe(2) NCs capped with {In(2)Cu(2)Se(4)S(3)}(3-) MCCs. A mixture of Cu(2-x)Se and ZnS NCs, both capped with Sn(2)S(6)(4-) or Sn(2)Se(6)(4-) ligands was used for solution deposition of CZTS films. Upon thermal annealing, the inorganic ligands reacted with NC cores forming well-crystallized pure ternary and quaternary phases. Solution-processed CIS and CZTS films featured large grain size and high phase purity, confirming the prospects of this approach for practical applications.

  4. Unique oxide overcoating of CuInS2/ZnS core/shell quantum dots with ZnGa2O4 for fabrication of white light-emitting diode with improved operational stability

    NASA Astrophysics Data System (ADS)

    Song, Woo-Seuk; Jang, Eun-Pyo; Kim, Jong-Hoon; Jang, Ho Seong; Yang, Heesun

    2013-02-01

    CuInS2 quantum dots (QDs) have been recently highlighted as blue-to-yellow color converters for the demonstration of QD-based white light-emitting diodes (LEDs) owing to their advantageous fluorescent attributes including a broadband yellow emission and exceptional quantum yield. Similar to other types of elaborate core/shell structured QDs, however, core/shell QDs of CuInS2/ZnS are also susceptible to the photo-induced degradation, rendering them inappropriate for the practical application to high operational stability white LED. In this study, CuInS2/ZnS QDs are overcoated with the unprecedented oxide phase of ZnGa2O4 to enhance their photostability, and the resulting CuInS2/ZnS/ZnGa2O4 QDs are characterized with X-ray diffraction and transmission electron microscope. The operational stability test of CuInS2/ZnS/ZnGa2O4 QD-based white LED is performed and compared with that of uncoated CuInS2/ZnS QD-based one, and the efficacy of ZnGa2O4 overlayer is proved in mitigating the photodegradation of QDs and thus improving the device stability.

  5. Magnetic properties of the compounds R 2CuIn 3 (R=Tb,Dy,Ho,Er)

    NASA Astrophysics Data System (ADS)

    Szytuła, A.; Arulraj, A.; Baran, S.; Kaczorowski, D.; Penc, B.; Stüsser, N.

    2008-07-01

    The crystal and magnetic structures of the R 2CuIn 3 (R=Tb,Dy,Ho and Er) compounds have been studied by X-ray and neutron powder diffraction. Moreover, the bulk magnetic properties have been investigated by magnetometric methods. All these compounds crystallize with the hexagonal CaIn 2-type structure. At low temperatures they order antiferromagnetically with the Néel temperatures in the range from 37.6 K to 3.3 K found for R=Tb and Er, respectively. The magnetic structures can be described by the propagation vectors k=(kx,kx,0) with the value of kx varying with increasing number of 4f electrons.

  6. The effect of processing on the properties of CuInS2 nanomaterials synthesized by simple hot injection route

    NASA Astrophysics Data System (ADS)

    Chen, Qin-Miao; Zhou, Fang-Fang; Yuan, Hong-Chun; Chen, Jin; Ni, Yi; Zhu, Xi-Fang; Dou, Xiao-Ming

    2017-07-01

    Chalcopyrite and wurtzite CuInS2 (CIS) nanomaterials were synthesized from Cu2+, In3+, thiourea with or without triethanolamine (TEA) by simple hot injection method at low temperature. The effect of synthesis duration on the various properties of the synthesized CIS nanomaterials was studied. It shows that for chalcopyrite CIS, the optimal synthesis duration is 60 min and the synthesized nanomaterial is in spherical shape with diameter of about 90 nm. However, for the wurtzite CIS, the optimal synthesis duration should reach 150 min and the synthesized nanomaterial looks like nanoplate with thicknesses of ˜10 nm and diameters near 100 nm. The photovoltaic characteristics of two types of nanomaterials are quite different. This study may contribute to the synthesis of CIS nanomaterials at low temperatures.

  7. Surface nanostructuring of CuIn1-x Ga x Se2 films using argon plasma treatment

    NASA Astrophysics Data System (ADS)

    Zimin, S. P.; Gorlachev, E. S.; Mokrov, D. A.; Amirov, I. I.; Naumov, V. V.; Gremenok, V. F.; Juskenas, R.; Skapas, M.; Kim, W. Y.; Bente, K.; Chung, Y.-D.

    2017-07-01

    In this work we report a phenomenon of the self-formation of nanostructure arrays during low-energy inductively coupled argon plasma treatment of the surface of copper indium gallium diselenide films grown by different methods on glass substrates. Selenization, pulsed laser deposition and multistage co-evaporation technological methods were used for the growth of polycrystalline CuIn1-x Ga x Se2 (0.04 ≤ x ≤ 0.45) films. The plasma treatment of the surface of the films grown by all three methods resulted in the plasma-assisted self-formation of arrays of uniform cylindrical or conical nanostructures with the surface density of (0.8-1.8) × 1011 cm-2. Using scanning electron microscopy, transmission electron microscopy and atomic force microscopy, we describe the morphological parameters and chemical composition of the fabricated nanostructures and discuss possible physical mechanisms of the observed plasma-assisted nanostructuring.

  8. Photoelectrochemical properties of Cu(In0.75Ga0.25)3Se5 ordered vacancy compound

    NASA Astrophysics Data System (ADS)

    Djellal, L.; Doulache, M.; Trari, M.

    2011-08-01

    Ordered vacancy compound Cu(In0.75Ga0.25)3Se5 was synthesized by the fusion technique. The starting elements were sealed in evacuated silica tube and submitted to programmed thermal treatment. The x-ray diffraction confirmed the formation of the phase which crystallizes in the chalcopyrite structure. The elemental composition (Cu = 13.45 at.%, In = 22.14 at.%, Ga = 8.42 at.%, Se = 56.0 at.%) was determined by the energy dispersive spectroscopy. The optical gap (Eg) was obtained from the diffuse reflectance spectrum through the Kubelka-Munk equation. The dependence of the absorption coefficient (α) on the photon energy (hν) near the band edge is characteristic of directly allowed optical transition with Eg value of 1.27 eV. The high temperature conductivity data were fitted to a small lattice type polaron hopping based on the strong electron-lattice interaction with an effective mass of 0.76 mo. The material exhibits an excellent chemical stability in basic solution with a corrosion rate of 0.87 µmol per month. The photoelectrochemical characterization was done in KOH (0.5 M) electrolyte and the n-type conductivity was confirmed by the anodic photocurrent. The flat band potential (-0.78 VSCE) and the donor's density (2.73 × 1019 cm-3) were derived respectively from the slope and intercept with the potential axis of the Mott-Schottky plot. The results showed the potentiality of Cu(In0.75Ga0.25)3Se5 for the photoelectrochemical hydrogen evolution.

  9. Advances in thin-film solar cells for lightweight space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  10. Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation

    SciTech Connect

    Mise, Takahiro; Nakada, Tokio

    2012-09-15

    The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

  11. CONTROLLING THE CHARACTERISTICS OF LASER LIGHT: Passive mode locking of neodymium lasers using glasses with CuInS2xSe2(1-x) microcrystallites

    NASA Astrophysics Data System (ADS)

    Yumashev, K. V.; Mikhaĭlov, V. P.; Bondar', I. V.; Demchuk, M. I.; Prokoshin, P. V.; Dashyan, R. S.

    1993-09-01

    We report passive mode locking of Nd:YAG and Nd:YAlO3 lasers using glasses with microcrystallites of CuInS2xSe2(1-x). We show that it is possible for these glasses to act as saturable absorbers in lasers with active negative feedback. We have obtained ultrashort pulses with a duration of 16 ps and an energy of 20 mJ.

  12. Highly stable CuInS2@ZnS:Al core@shell quantum dots: the role of aluminium self-passivation.

    PubMed

    Rao, Pinhua; Yao, Wei; Li, Zhichun; Kong, Long; Zhang, Wenqi; Li, Liang

    2015-05-25

    A simple approach was introduced to enhance the photostability of CuInS2@ZnS core@shell quantum dots (QDs) by doping aluminium into the ZnS shell. Aluminium in the as-prepared QDs was oxidized to Al2O3, which formed a passivation oxide layer that effectively prevents photo-degradation of QDs during long-term light irradiation.

  13. Energy transfer in aggregated CuInS2/ZnS core-shell quantum dots deposited as solid films

    NASA Astrophysics Data System (ADS)

    Gardelis, S.; Fakis, M.; Droseros, N.; Georgiadou, D.; Travlos, A.; Nassiopoulou, A. G.

    2017-01-01

    We report on the morphology and optical properties of CuInS2/ZnS core-shell quantum dots in solid films by means of AFM, SEM, HRTEM, steady state and time-resolved photoluminescence (PL) spectroscopy. The amount of aggregation of the CuInS2/ZnS QDs was controlled by changing the preparation conditions of the films. A red-shift of the PL spectrum of CuInS2/ZnS core-shell quantum dots, deposited as solid films on silicon substrates, is observed upon increasing the amount of aggregation. The presence of larger aggregates was found to lead to a larger PL red-shift. Besides, as the degree of aggregation increased, the PL decay became slower. We attribute the observed PL red-shift to energy transfer from the smaller to the larger dots within the aggregates, with the emission being realized via a long decay recombination mechanism (100-200 ns), the origin of which is discussed.

  14. Effect of Cu/In molar ratio on the microstructural and optical properties of microcrystalline CuInS{sub 2} prepared by solvothermal route

    SciTech Connect

    Das, Kajari; Panda, Subhendu K.; Gorai, Soma; Mishra, Pratima; Chaudhuri, Subhadra

    2008-10-02

    Synthesis and characterization of CuInS{sub 2} powder sample prepared by a simple and convenient solvothermal method is reported. The influence of the variation of Cu/In molar ratio from 0.69 to 1.25 on the particle morphology, crystal structure and optical properties of CuInS{sub 2} samples was studied. The X-ray diffraction studies indicated that the samples were polycrystalline in nature. SEM images of the samples revealed that the copper-rich products were uniform microspheres with smooth surfaces, whereas microspheres formed by network of interconnected flakes were obtained for indium-rich products. The optical band gaps (E{sub g}) of the products decreased from 1.60 to 1.43 eV with variation of Cu/In molar ratio. The variation of the Urbach tail width with Cu/In molar ratio indicated that the density of the defects is much higher for the indium-rich CuInS{sub 2}, which was clearly revealed from Raman measurements.

  15. Cadmium-free CuInS2/ZnS quantum dots for sentinel lymph node imaging with reduced toxicity.

    PubMed

    Pons, Thomas; Pic, Emilie; Lequeux, Nicolas; Cassette, Elsa; Bezdetnaya, Lina; Guillemin, François; Marchal, Frédéric; Dubertret, Benoit

    2010-05-25

    Semiconductor quantum dots (QDs) could significantly impact the performance of biomedical near-infrared (NIR) imaging by providing fluorescent probes that are brighter and more photostable than conventional organic dyes. However, the toxicity of the components of NIR emitting II-VI and IV-VI QDs that have been made so far (Cd, Hg, Te, Pb, etc.) has remained a major obstacle to the clinical use of QDs. Here, we present the synthesis of CuInS(2)/ZnS core/shell QDs emitting in the NIR ( approximately 800 nm) with good quantum yield and stability even after transfer into water. We demonstrate the potential of these QDs by imaging two regional lymph nodes (LNs) in vivo in mice. We then compare the inflammatory response of the axillary LN induced by different doses of CuInS(2)/ZnS and CdTeSe/CdZnS QDs and show a clear difference in acute local toxicity, the onset of inflammation only occurring at a 10 times more concentrated dose for CuInS(2)/ZnS QDs than for their Cd-containing counterparts.

  16. 3-Aminophenylboronic acid-functionalized CuInS2 quantum dots as a near-infrared fluorescence probe for the detection of dicyandiamide.

    PubMed

    Liu, Siyu; Pang, Shu; Huang, Hui; Su, Xingguang

    2014-11-21

    In this paper, a simple and highly selective method for the determination of dicyandiamide (DCD) was developed based on the fluorescence quenching of functionalized CuInS2 quantum dots (QDs). Water-soluble CuInS2 QDs, capped by mercaptopropionic acid, were directly synthesized in aqueous solution and then covalently linked to 3-aminophenylboronic acid molecules to form the 3-aminophenylboronic acid-functionalized CuInS2 QDs (F-CuInS2 QDs) that had a fairly symmetric fluorescence emission centered at 736 nm. Based on the cyclization of the guanidine group of DCD with 2,3-butanedione and 3-aminophenylboronic acid, the fluorescence of the F-CuInS2 QDs is quenched by DCD in the presence of 2,3-butanedione. This method effectively distinguishes DCD from other amino acids and nitrogen pollutants, such as melamine, in real milk samples. Under optimum conditions, there was a good linear relationship between the fluorescence intensity of F-CuInS2 QDs and the concentration of DCD in the range of 2.0 × 10(-6) to 2.0 × 10(-3) mol L(-1), with a detection limit of 0.6 μmol L(-1).

  17. Totally solution-processed CuInS2 solar cells based on chloride inks: reduced metastable phases and improved current density

    NASA Astrophysics Data System (ADS)

    Dehghani, Mehdi; Behjat, Abbas; Tajabadi, Fariba; Taghavinia, Nima

    2015-03-01

    Planar superstrate CuInS2 (CIS) solar cell devices are fabricated using totally solution-processed deposition methods. These Cd-free devices are structured by FTO/TiO2/In2S3/CIS/carbon, where TiO2 and In2S3 are deposited by spray pyrolysis, and a CIS film is deposited using spin-coating followed by annealing at 250 °C. The pasted carbon layer is utilized as the anode. No further sulfurization or selenization is employed. The Cu/In ratio in the ink is found as a critical factor affecting the morphology and crystallinity of the film as well as the photovoltaic performance of the device. An optimum Cu/In = 1.05 results in large-grain films with sharp diffraction peaks and, subsequently, optimal series resistance and shunt conductance. It is also found that the chloride-based ink results in CIS films with considerably reduced metastable phases, compared to the conventional acetate-based inks. A current density of 23.6 mA cm-2 is obtained for the best devices, leading to a conversion efficiency of 4.1%.

  18. Synthesis of Hydrophilic CuInS2/ZnS Quantum Dots with Different Polymeric Shells and Study of Their Cytotoxicity and Hemocompatibility.

    PubMed

    Speranskaya, Elena S; Sevrin, Chantal; De Saeger, Sarah; Hens, Zeger; Goryacheva, Irina Yu; Grandfils, Christian

    2016-03-01

    In this work, there is a detailed description of the whole process of biocompatible CIS/ZnS QDs production. Special attention was paid to the stability of QDs against photooxidation. It was shown that Cu/In ratio greatly affected not only nanocrystals PLQYs but photostability as well. CIS/ZnS QDs with Cu/In = 1:4 ratio showed high photostability under UV illumination both in toluene and aqueous solutions. Meanwhile, photoluminescence of CIS/ZnS QDs with Cu/In = 1:1 ratio was completely quenched after several hours under UV illumination, though their initial QY was as high as 40% with peak maximum at 740 nm. QDs were transferred to water by polymer encapsulation and were subsequently modified with polyethers Jeffamines, cheap analogues of PEG-derivatives. Three types of hydrophilic QDs differing in size, PEG content, and surface charge were obtained for further investigation and comparison of their cytotoxicity and hemocompatibility. It was shown that both leucocytes size distribution and coagulation activation change after introduction of polyethers into QDs polymeric shell, while red blood cells and platelets size distribution as well as hemolysis rate did not show any different results among different QDs and the polymer itself. All three types of QDs showed only slight cytotoxicity. Confocal microscopy proves penetration of hydrophilic CIS/ZnS QDs inside cells, so the low QDs cytotoxocity cannot be explained by low cellular uptake of the QDs and indicated low QDs toxicity in general.

  19. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  20. Development of CIGS2 Thin Films on Ultralightweight Flexible Large Area Foil Sunstrates

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

    2005-01-01

    The development of thin film solar cells is aimed at reducing the costs for photovoltaic systems. Use of thin film technology and thin foil substrate such as 5-mil thick stainless steel foil or 1-mil thick Ti would result in considerable costs savings. Another important aspect is manufacturing cost. Current single crystal technology for space power can cost more than $ 300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn1-xGaxS2 (CIGS2), CuIn(1-x)Ga(x)Se(2-y)S(y) (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite for example, the array manufacturing cost alone may exceed $ 2 million. Moving to thin film technology could reduce this expense to less than $ 500K. Earlier publications have demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6 in x 4 in) substrates. This paper presents the developmental study of achieving stress free Mo coating; uniform coatings of Mo back contact and metallic precursors. The paper also presents the development of sol gel process, refurbishment of selenization/sulfurization furnace, chemical bath deposition (CBD) for n-type CdS and scrubber for detoxification of H2S and H2Se gases.

  1. High efficiency copper ternary thin film solar cells

    SciTech Connect

    Basol, B.M.; Kapur, V.K. )

    1991-04-01

    This report describes work to develop a high efficiency, thin film CuInSe{sub 2} solar cell using a potentially low-cost process. The technique used in this development program is a two-stage process. The two-stage process involves depositing the metallic elements of the CuInSe{sub 2} compound (i.e., Cu and In) on a substrate in the form of stacked layers, and then selenizing this stacked metallic film in an atmosphere containing Se. Early results showed that the electrodeposition/selenization technique could yield CuInSe{sub 2} films with good electrical and optical properties on small-area substrates. This report concentrates on the later half of the research effort; this portion was directed toward developing a two-stage process using evaporated Cu-In layers. The selenization technique has the potential of yielding solar cells with efficiencies in excess of 15 percent. 7 refs., 12 figs.

  2. Charge carrier dynamics investigation of CuInS2 quantum dots films using injected charge extraction by linearly increasing voltage (i-CELIV): the role of ZnS Shell

    NASA Astrophysics Data System (ADS)

    Bi, Ke; Sui, Ning; Zhang, Liquan; Wang, Yinghui; Liu, Qinghui; Tan, Mingrui; Zhou, Qiang; Zhang, Hanzhuang

    2016-12-01

    The role of ZnS shell on the photo-physical properties within CuInS2/ZnS quantum dots (QDs) is carefully studied in optoelectronic devices. Linearly increasing voltage technique has been employed to investigate the charge carrier dynamics of both CuInS2 and CuInS2/ZnS QDs films. This study shows that charge carriers follow a similar behavior of monomolecular recombination in this film, with their charge transfer rate correlates to the increase of applied voltage. It turns out that the ZnS shell could affect the carrier diffusion process through depressing the trapping states and would build up a potential barrier.

  3. Aqueous Solution-Phase Selenized CuIn(S,Se)2 Thin Film Solar Cells Annealed under Inert Atmosphere.

    PubMed

    Oh, Yunjung; Yang, Wooseok; Kim, Jimin; Woo, Kyoohee; Moon, Jooho

    2015-10-14

    A nonvacuum solution-based approach can potentially be used to realize low cost, roll-to-roll fabrication of chalcopyrite CuIn(S,Se)2 (CISSe) thin film solar cells. However, most solution-based fabrication methods involve highly toxic solvents and inevitably require sulfurization and/or postselenization with hazardous H2S/H2Se gases. Herein, we introduce novel aqueous-based Cu-In-S and Se inks that contain an amine additive for producing a high-quality absorber layer. CISSe films were fabricated by simple deposition of Cu-In-S ink and Se ink followed by annealing under an inert atmosphere. Compositional and phase analyses confirmed that our simple aqueous ink-based method facilitated in-site selenization of the CIS layer. In addition, we investigated the molecular structures of our aqueous inks to determine how crystalline chalcopyrite absorber layers developed without sulfurization and/or postselenization. CISSe thin film solar cells annealed at 550 °C exhibited an efficiency of 4.55% under AM 1.5 illumination. The low-cost, nonvacuum method to deposit chalcopyrite absorber layers described here allows for safe and simple processing of thin film solar cells.

  4. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael; Banger, Kal; Harris, Jerry; Hepp, Aloysius

    2003-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  5. Photoluminescence Enhancement of CuInS2 Quantum Dots in Solution Coupled to Plasmonic Gold Nanocup Array.

    PubMed

    Peer, Akshit; Hu, Zhongjian; Singh, Ajay; Hollingsworth, Jennifer A; Biswas, Rana; Htoon, Han

    2017-09-01

    A strong plasmonic enhancement of photoluminescence (PL) decay rate in quantum dots (QDs) coupled to an array of gold-coated nanocups is demonstrated. CuInS2 QDs that emit at a wavelength that overlaps with the extraordinary optical transmission (EOT) of the gold nanocup array are placed in the cups as solutions. Time-resolved PL reveals that the decay rate of the QDs in the plasmonically coupled system can be enhanced by more than an order of magnitude. Using finite-difference time-domain (FDTD) simulations, it is shown that this enhancement in PL decay rate results from an enhancement factor of ≈100 in electric field intensity provided by the plasmonic mode of the nanocup array, which is also responsible for the EOT. The simulated Purcell factor approaches 86 at the bottom of the nanocup and is ≈3-15 averaged over the nanocup cavity height, agreeing with the experimental enhancement result. This demonstration of solution-based coupling between QDs and gold nanocups opens up new possibilities for applications that would benefit from a solution environment such as biosensing. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Superstrate CuInS2 photovoltaics with enhanced performance using a CdS/ZnO nanorod array.

    PubMed

    Lee, Dongwook; Yong, Kijung

    2012-12-01

    An air-stable, low-temperature, solution-based process for preparing CuInS(2) (CIS) superstrate solar cells using CdS-decorated ZnO nanorod (NR) arrays is reported. Efficient light harvesting and photoexcited charge transport were achieved by fabricating a ZnO NR window layer with a large p-n junction area via a hydrothermal reaction. A CdS buffer layer was deposited on a transparent ZnO NR substrate at room temperature via successive ion layer adsorption and reaction (SILAR) or nanocrystal layer deposition (NCLD). The prepared CdS/ZnO NR assembly was coated with a CIS absorber layer without the need for surface passivation organics or dispersion reagents. The CIS precursor solution, prepared using a metal salt, thiourea, and an amine solvent, yielded CIS nanocrystals (NCs) at temperatures up to 250 °C. The CIS/CdS/ZnO NR heterojunction structure exhibited an excellent photovoltaic performance compared to a planar ZnO film device due to enhanced light transmittance toward the absorber and a high charge collection efficiency. These results suggest that a superstrate CIS/CdS/ZnO NRs photovoltaic cell fabricated via the low-cost route described here has great potential as a next-generation solar cell device.

  7. Controlled Synthesis of CuInS2/ZnS Nanocubes and Their Sensitive Photoluminescence Response toward Hydrogen Peroxide.

    PubMed

    Kim, Youngsun; Jang, Ho Seong; Kim, Hyunki; Kim, Sehoon; Jeon, Duk Young

    2017-09-20

    We synthesized uniform CuInS2/ZnS nanocubes by adjusting reaction parameters at the ZnS growth stage. Higher temperature and zinc concentration were shown to drive resultant crystals to have cubic morphology, which could be ascribed to the facet-dependent ligand dynamics on the crystal surface and concomitantly preferred directions of crystal growth. It was found that these nanocubes exhibit sensitive responses, as of photoluminescence quenching, toward hydrogen peroxide, compared to pyramid-shaped nanocrystals. The origin of quenching was further analyzed to be the oxidation of thiolate ligands that leaves the quenching center on the surface. It was noted that the quenched photoluminescence could be fully recovered by introducing additional ligand molecules into the system. Being adopted in the shape-controlled crystal growth, the ligand-to-crystal interaction was shown to still govern the interfacial reaction, the oxidation by hydrogen peroxide, of faceted crystals in our system. It turns out that the reactivity at the crystal surface depends on the exposed facets, especially induced by shape control, and the weak ligand-binding nature of the nanocube renders it vulnerable to the surface reaction.

  8. Photoluminescence Enhancement of CuInS2 Quantum Dots in Solution Coupled to Plasmonic Gold Nanocup Array

    DOE PAGES

    Peer, Akshit; Hu, Zhongjian; Singh, Ajay; ...

    2017-07-05

    A strong plasmonic enhancement of photoluminescence (PL) decay rate in quantum dots (QDs) coupled to an array of gold-coated nanocups is demonstrated. CuInS2 QDs that emit at a wavelength that overlaps with the extraordinary optical transmission (EOT) of the gold nanocup array are placed in the cups as solutions. Time-resolved PL reveals that the decay rate of the QDs in the plasmonically coupled system can be enhanced by more than an order of magnitude. Using finite-difference time-domain (FDTD) simulations, it is shown that this enhancement in PL decay rate results from an enhancement factor of ≈100 in electric field intensitymore » provided by the plasmonic mode of the nanocup array, which is also responsible for the EOT. The simulated Purcell factor approaches 86 at the bottom of the nanocup and is ≈3–15 averaged over the nanocup cavity height, agreeing with the experimental enhancement result. In conclusion, this demonstration of solution-based coupling between QDs and gold nanocups opens up new possibilities for applications that would benefit from a solution environment such as biosensing.« less

  9. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  10. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  11. Excitonic luminescence of polycrystalline CuInS2 solar cell material under the influence of strain

    NASA Astrophysics Data System (ADS)

    Eberhardt, J.; Metzner, H.; Schulz, K.; Reislöhner, U.; Hahn, Th.; Cieslak, J.; Witthuhn, W.; Goldhahn, R.; Hudert, F.; Kräußlich, J.

    2007-08-01

    Using molecular beams, polycrystalline CuInS2 (CIS) films were deposited on Mo-covered Si substrates. In order to investigate the influence of growth-induced strain on the optical and structural properties, detailed photoluminescence, photoreflectance and x-ray diffraction (XRD) measurements were performed. The transition energy of the free A-exciton (FXA) transition decreases with (i) decreasing thickness of the CIS layer at a constant thickness of the Mo buffer layer and (ii) increasing thickness of the Mo buffer layer at a constant CIS layer thickness. This appreciable redshift of FXA is accompanied by an increase of the energetic splittings between FXA, FXB, and FXC. When we compare theoretically predicted valence band splittings as a function of the crystal field—obtained from the calculated relative valence band energies—to our experimental values, a completely coherent picture is obtained. We also derived the structure of the conduction band as a function of crystal field, based on the theoretically expected valence band structures combined with the measured transition energies of FXA, FXB, and FXC. The XRD data show the increasing strain to occur with decreasing lattice spacings in growth direction.

  12. Mo/Cu(In, Ga)Se 2 back interface chemical and optical properties for ultrathin CIGSe solar cells

    NASA Astrophysics Data System (ADS)

    Erfurth, F.; Jehl, Z.; Bouttemy, M.; Dahan, N.; Tran-Van, P.; Gerard, I.; Etcheberry, A.; Greffet, J.-J.; Powalla, M.; Voorwinden, G.; Lincot, D.; Guillemoles, J. F.; Naghavi, N.

    2012-01-01

    Chemical and optical properties of the interface between a coevaporated Cu(In,Ga)Se2 (CIGSe) absorber thin film and the Mo back contact are investigated with the objective to reduce markedly the thickness of CIGSe layers from two microns down to about 100 nm. First a mechanical lift off technique allowed to separate Mo and CIGSe layers and perform X-ray photoelectron spectroscopy (XPS) and elipsometry studies on as prepared surfaces. On the Mo side small amounts of In and Ga are observed together with the formation of an MoSe2 layer. There is no evidence of the presence of Cu. On the opposite CIGSe side a clear depletion of Cu together with an enrichment of Ga is evidenced. There is no evidence of Mo. Optical reflectivity of the interface CIGSe/Mo is studied by ellipsometry showing a low reflectivity of the interface attributed to the formation of MoSe2 layer. The enhance light absorption in ultrathin absorbers using alternative, highly reflective back contacts are finally discussed.

  13. Inkjet Printed Metallizations for Cu(In1-xGax)Se2 Photovoltaic Cells

    SciTech Connect

    Hersh, P. A.; Curtis, C. J.; van Hest, M. F. A. M.; Kreuder, J. J.; Pasquarelli, R.; Miednaer, A.; Ginley, D. S.

    2011-12-01

    This study reports the inkjet printing of Ag front contacts on Aluminum doped Zinc Oxide (AZO)/intrinsic Zinc Oxide (i-ZnO)/CdS/Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (CIGS)/Mo thin film photovoltaic cells. The printed Ag contacts are being developed to replace the currently employed evaporated Ni/Al bi-layer contacts. Inkjet deposition conditions were optimized to reduce line resistivity and reduce contact resistance to the Al:ZnO layer. Ag lines printed at a substrate temperature of 200 C showed a line resistivity of 2.06 {mu}{Omega} {center_dot} cm and a contact resistance to Al:ZnO of 8.2 {+-} 0.2 m{Omega} {center_dot} cm{sup 2} compared to 6.93 {+-} 0.3 m{Omega} {center_dot} cm{sup 2} for thermally evaporated contacts. These deposition conditions were used to deposit front contacts onto high quality CIGS thin film photovoltaic cells. The heating required to print the Ag contacts caused the performance to degrade compared to similar devices with evaporated Ni/Al contacts that were not heated. Devices with inkjet printed contacts showed 11.4% conversion efficiency compared to 14.8% with evaporated contacts. Strategies to minimize heating, which is detrimental for efficiency, during inkjet printing are proposed.

  14. Improvement in properties of window layer of sprayed CuInS2/In2S3 solar cell by optimization of tin doping

    NASA Astrophysics Data System (ADS)

    Santhosh, M. V.; Sreejith, M. S.; Kartha, C. Sudha; Vijayakumar, K. P.

    2014-01-01

    Effect of diffusion of Tin in the window layer of CuInS2/In2S3 heterojunction photovoltaic device fabricated using automated spray pyrolysis machine, is presented in this paper. Considerable improvement in the device parameters was observed through this process. The best device obtained in this study had open-circuit voltage of 370mV, short circuit current density of 5.33mA/cm2, fill factor of 32% and efficiency of 0.65%.

  15. Ageing studies on CuInS2/In2S3 junction (2.5×2cm2) deposited using automated spray machine

    NASA Astrophysics Data System (ADS)

    Santhosh, M. V.; Kartha, C. Sudha; Vijayakumar, K. P.

    2014-04-01

    CuInS2/In2S3 heterojunction photovoltaic device was realized in an area of 2.5 × 2 cm2 using automated spray pyrolysis machine which shows an open-circuit voltage of 432mV, short circuit current density of 6.33mA/cm2, fill factor of 34% and efficiency of 0.94%. Performance of the device was monitored up to 100 days and it was working quite well without the application of any protective coatings. The device maintains a fill factor of around 32% up to 80 days but other photovoltaic parameters had slight decrease.

  16. One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells.

    PubMed

    Harati, Mohammad; Jia, Jia; Giffard, Kévin; Pellarin, Kyle; Hewson, Carly; Love, David A; Lau, Woon Ming; Ding, Zhifeng

    2010-12-14

    Herein we report the one-pot electrodeposition of copper indium gallium diselenide, CuIn(1-x)Ga(x)Se(2) (CIGS), thin films as the p-type semiconductor in an ionic liquid medium consisting of choline chloride/urea eutectic mixture known as Reline. The thin films were characterized by scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman microspectroscopy, and UV-visible spectroscopy. Based on the results of the characterizations, the electrochemical bath recipe was optimized to obtain stoichiometric CIGS films with x between 0.2 and 0.4. The chemical activity and photoreactivity of the optimized CIGS films were found to be uniform using scanning electrochemical microscopy and scanning photoelectrochemical microscopy. Low-cost stoichiometric CIGS thin films in one-pot were successfully fabricated.

  17. Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

    NASA Technical Reports Server (NTRS)

    Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  18. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    SciTech Connect

    Shrotriya, Vipin Rajaram, P.

    2016-05-06

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl{sub 2}, InCl{sub 3}, thiourea and SeO{sub 2} were used as source materials for the Cu{sup 2+}, In{sup 3+}, S{sup 2−} and Se{sup 2−} ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  19. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Shrotriya, Vipin; Rajaram, P.

    2016-05-01

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl2, InCl3, thiourea and SeO2 were used as source materials for the Cu2+, In3+, S2- and Se2- ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  20. Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination.

    PubMed

    Xu, Xueqing; Wan, Qingcui; Luan, Chunyan; Mei, Fengjiao; Zhao, Qian; An, Ping; Liang, Zhurong; Xu, Gang; Zapien, Juan Antonio

    2013-11-13

    Tetragonal CuInS2 (CIS) has been successfully deposited onto mesoporous TiO2 films by in-sequence growth of InxS and CuyS via a successive ionic layer absorption and reaction (SILAR) process and postdeposition annealing in sulfur ambiance. X-ray diffraction and Raman measurements showed that the obtained tetragonal CIS consisted of a chalcopyrite phase and Cu-Au ordering, which related with the antisite defect states. For a fixed Cu-S deposition cycle, an interface layer of β-In2S3 formed at the TiO2/CIS interface with suitable excess deposition of In-S. In the meantime, the content of the Cu-Au ordering phase decreased to a reasonable level. These facts resulted in the retardance of electron recombination in the cells, which is proposed to be dominated by electron transfer from the conduction band of TiO2 to the unoccupied defect states in CIS via exponentially distributed surface states. As a result, a relatively high efficiency of ~0.92% (V(oc) = 0.35 V, J(sc) = 8.49 mA cm(-2), and FF = 0.31) has been obtained. Last, but not least, with an overloading of the sensitizers, a decrease in the interface area between the sensitized TiO2 and electrolytes resulted in deceleration of hole extraction from CIS to the electrolytes, leading to a decrease in the fill factor of the solar cells. It is indicated that the unoccupied states in CIS with energy levels below EF0 of the TiO2 films play an important role in the interface electron recombination at low potentials and has a great influence on the fill factor of the solar cells.

  1. Optical constants of Cu(In, Ga)Se{sub 2} for arbitrary Cu and Ga compositions

    SciTech Connect

    Minoura, Shota; Kodera, Keita; Nakane, Akihiro; Fujiwara, Hiroyuki; Maekawa, Takuji; Niki, Shigeru

    2015-05-21

    The optical constants of Cu(In, Ga)Se{sub 2} (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

  2. Mott type variable range hopping conduction and magnetoresistance in p-type CuIn3Te5 semiconductor compound

    NASA Astrophysics Data System (ADS)

    Essaleh, L.; Wasim, S. M.; Marín, G.; Rincón, C.; Amhil, S.; Galibert, J.

    2017-07-01

    Variable range hopping (VRH) conduction of Mott type for a constant and non-vanishing density of states at the Fermi level is observed over a wide range of temperature between 45 and 210 K in the ordered defect compound CuIn3Te5 (CIT135). For this type of electrical conduction at a very high temperature, not reported before in elemental, II-VI, and I-III-VI2 compound semiconductors, we employed three different methods to analyze the data and to confirm this behavior. The occurrence of VRH at very high temperatures is explained as due to the presence of the electrically inactive ( InCu+2 + 2 VCu -1) donor-acceptor defect pairs in CIT135. This defect-pair partially annihilates the shallow acceptor defect state Cu vacancy, which is responsible for the activated electrical conductivity observed in p-type ternary I-III-VI2 chalcopyrite compounds in the temperature range of liquid nitrogen. In such conditions, the only acceptor level available for electrical conduction in CIT135 is a deep acceptor state whose activation energy is about 200 meV and cannot be activated below about 200 K. Hence, the VRH conduction mechanism dominates the electrical properties of this material up to about 200 K. The study of the temperature and magnetic field dependence of the magnetoresistance (MR) up to 27 T is made by taking into consideration different theoretical models. To explain the negative MR at lower fields, the theory based on quantum interference is used. At higher magnetic fields, the MR becomes positive and is explained with the model based on the shrinkage of the wave function.

  3. Physical vapor deposition and analysis of copper indium aluminum diselenide thin films for high band gap solar cells

    NASA Astrophysics Data System (ADS)

    Haimbodi, Moses Warotua

    CuInSe2 films and related alloys have been used to fabricate the highest efficiency thin film solar cells. Alloying CuInSe2 with CuAlSe2 provides a way to engineer the band gap of the resulting films from 1 to 2.7 eV, thereby providing a pathway for improving device performance. In this work, thin films of CuIn1-xAlxSe 2 obtained by multi-source PVD were characterized and investigated for their potential use as high band gap solar cells. The band gap of the films was varied by controlling the [Al]/[Al + In] ratio. Deposition of these films with varying [Cu]/[Al + In] ratios and thickness (1--4 mum) was carried out at substrate temperatures from 350--530°C. CuIn1-xAlxSe2 based solar cells have been fabricated using the structure glass/Mo/CuIn1-xAl xSe2/CdS/ZnO/grid. The effect of varying the band gap on device performance will be discussed. The highest efficiency obtained in this work is 11% using a film with Eg ≈ 1.3 eV. For high Al content, x > 0.3, device-performance decreases mainly due to poor FF similar to that observed in CuIn1-xGaxSe2 devices and is attributed to poor minority carrier collection. For CuIn1-xAlxSe2 films with x = 1, data is analyzed and presented with respect to [Cu]/[Al] and Se to total metal flux ratio, RSe/RM. Phase analysis shows that the resulting films contain different phases that depend on these parameters. Several of these films also contain concentrations of oxygen varying from 12 to 60 at. % as the [Cu]/[Al] ratio decreases. For RSe/R M > 10, a new structure we label as CuxAlySe z was observed. The oxygen content in all of the films obtained under RSe/RM > 10 vary between 1--3 at. %. Based on the Cu-Se, Al-Se, Cu-Al binary and the Cu2Se-Al2Se 3 pseudo-binary phase diagrams, a phenomenological film growth model is presented showing that the film growth kinetics are controlled by the delivery of Se.

  4. Fabrication of MnFe2O4-CuInS2/ZnS Magnetofluorescent Nanocomposites and Their Characterization

    PubMed Central

    Demillo, Violeta G.; Liao, Mingxia; Zhu, Xiaoshan; Redelman, Doug; Publicover, Nelson G.; Hunter, Kenneth W.

    2014-01-01

    Magnetofluorescent nanocomposites (MFNCs) providing a single nanoscale platform with multimodal properties are gaining momentum in biological manipulation, biomedical imaging and therapy. In this work, we report the preparation of MFNCs integrating MnFe2O4 magnetic nanoparticles (MNPs), CuInS2/ZnS quantum dots (QDs) and poly(ethylene glycol)-b-poly(lactide-co-glycolide) (PEG-PLGA) in a tetrahydrofuran (THF)/water solvent system. Through sonication and quick solvent displacement, multiple nanoparticles of each type are co-encapsulated within the hydrophobic core of PEG-PLGA micelles. The developed fabrication process is simple and fast. Moreover, due to the low toxicity of CuInS2/ZnS QDs, the fabrication process is environmentally benign. The fabricated MFNCs were further characterized regarding their fundamental physical, chemical and biological properties. Results reveal that the MFNCs possess high (Mn + Fe) recovery rates, and the optical properties and magnetic relaxivity of the MFNCs are sensitive to the MNP:QD mass ratios in the fabrication. Furthermore, the MFNCs present excellent stability in aqueous solutions, minimal cytotoxicity, and capability for bioconjugation. This study opens an avenue for the MFNCs to be employed in broad biological or biomedical applications. PMID:25484523

  5. Fabrication of MnFe2O4-CuInS2/ZnS Magnetofluorescent Nanocomposites and Their Characterization.

    PubMed

    Demillo, Violeta G; Liao, Mingxia; Zhu, Xiaoshan; Redelman, Doug; Publicover, Nelson G; Hunter, Kenneth W

    2015-01-05

    Magnetofluorescent nanocomposites (MFNCs) providing a single nanoscale platform with multimodal properties are gaining momentum in biological manipulation, biomedical imaging and therapy. In this work, we report the preparation of MFNCs integrating MnFe2O4 magnetic nanoparticles (MNPs), CuInS2/ZnS quantum dots (QDs) and poly(ethylene glycol)-b-poly(lactide-co-glycolide) (PEG-PLGA) in a tetrahydrofuran (THF)/water solvent system. Through sonication and quick solvent displacement, multiple nanoparticles of each type are co-encapsulated within the hydrophobic core of PEG-PLGA micelles. The developed fabrication process is simple and fast. Moreover, due to the low toxicity of CuInS2/ZnS QDs, the fabrication process is environmentally benign. The fabricated MFNCs were further characterized regarding their fundamental physical, chemical and biological properties. Results reveal that the MFNCs possess high (Mn + Fe) recovery rates, and the optical properties and magnetic relaxivity of the MFNCs are sensitive to the MNP:QD mass ratios in the fabrication. Furthermore, the MFNCs present excellent stability in aqueous solutions, minimal cytotoxicity, and capability for bioconjugation. This study opens an avenue for the MFNCs to be employed in broad biological or biomedical applications.

  6. Thin Film Solar Cells: Organic, Inorganic and Hybrid

    NASA Technical Reports Server (NTRS)

    Dankovich, John

    2004-01-01

    Thin film solar cells are an important developing resource for hundreds of applications including space travel. In addition to being more cost effective than traditional single crystal silicon cells, thin film multi-crystaline cells are plastic and light weight. The plasticity of the cells allows for whole solar panels to be rolled out from reams. Organic layers are being investigated in order to increase the efficiency of the cells to create an organic / inorganic hybrid cell. The main focus of the group is a thin film inorganic cell made with the absorber CuInS2. So far the group has been successful in creating the layer from a single-source precursor. They also use a unique method of film deposition called chemical vapor deposition for this. The general makeup of the cell is a molybdenum back contact with the CuInS2 layer, then CdS, ZnO and aluminum top contacts. While working cells have been produced, the efficiency so far has been low. Along with quantum dot fabrication the side project of this that is currently being studied is adding a polymer layer to increase efficiency. The polymer that we are using is P3OT (Poly(3-octylthiopene-2,5-diyll), retroregular). Before (and if) it is added to the cell, it must be understood in itself. To do this simple diodes are being constructed to begin to look at its behavior. The P3OT is spin coated onto indium tin oxide and silver or aluminum contacts are added. This method is being studied in order to find the optimal thickness of the layer as well as other important considerations that may later affect the composition of the finished solar cell. Because the sun is the most abundant renewable, energy source that we have, it is important to learn how to harness that energy and begin to move away from our other depleted non-renewable energy sources. While traditional silicon cells currently create electricity at relatively high efficiencies, they have drawbacks such as weight and rigidness that make them unattractive

  7. Thin Film Solar Cells: Organic, Inorganic and Hybrid

    NASA Technical Reports Server (NTRS)

    Dankovich, John

    2004-01-01

    Thin film solar cells are an important developing resource for hundreds of applications including space travel. In addition to being more cost effective than traditional single crystal silicon cells, thin film multi-crystaline cells are plastic and light weight. The plasticity of the cells allows for whole solar panels to be rolled out from reams. Organic layers are being investigated in order to increase the efficiency of the cells to create an organic / inorganic hybrid cell. The main focus of the group is a thin film inorganic cell made with the absorber CuInS2. So far the group has been successful in creating the layer from a single-source precursor. They also use a unique method of film deposition called chemical vapor deposition for this. The general makeup of the cell is a molybdenum back contact with the CuInS2 layer, then CdS, ZnO and aluminum top contacts. While working cells have been produced, the efficiency so far has been low. Along with quantum dot fabrication the side project of this that is currently being studied is adding a polymer layer to increase efficiency. The polymer that we are using is P3OT (Poly(3-octylthiopene-2,5-diyll), retroregular). Before (and if) it is added to the cell, it must be understood in itself. To do this simple diodes are being constructed to begin to look at its behavior. The P3OT is spin coated onto indium tin oxide and silver or aluminum contacts are added. This method is being studied in order to find the optimal thickness of the layer as well as other important considerations that may later affect the composition of the finished solar cell. Because the sun is the most abundant renewable, energy source that we have, it is important to learn how to harness that energy and begin to move away from our other depleted non-renewable energy sources. While traditional silicon cells currently create electricity at relatively high efficiencies, they have drawbacks such as weight and rigidness that make them unattractive

  8. XPS Investigation of Surface Secondary Phase Segregation in CIGS Thin Film

    SciTech Connect

    Al-Thani, H. A.; Abdullah, M. M.; Hasoon, F. S.

    2011-01-01

    Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on Molybdenum (Mo) coated soda lime glass (SLG/Mo) substrates, using physical vapor deposition (PVD) 3-stage process. The Mo thin films were sputtered on SLG substrates using DC planar magnetron sputtering at a working gas (Ar) pressure that varies from 0.8 mT to 12 mT with a sputtering power density of 1.2 W/cm{sub 2}. The sputtering pressure of Mo thin films was varied in order to induce variations in the sputtered films morphology and porosity; as well as to subsequently induce variations in the Na out-diffusion from SLG substrate. The surface chemistry of CIGS thin films was investigated by X-Ray Photoelectron Spectroscopy (XPS). The XPS surface surveys (top 30A) and depth profiling survey (top 100A) for the elements, their chemical states, and their relative concentration were analyzed for CIGS thin films. The XPS surface analysis and composition of CIGS thin films were correlated to the bulk composition and Na out-diffusion in the CIGS films from SLG substrates.

  9. Structure and Composition Analysis of Cu(In,Al)Se2 Thin Films Prepared by Rapid Thermal Selenization

    NASA Astrophysics Data System (ADS)

    Lee, Shi-Wei; Tseng, Bae-Heng

    2012-10-01

    Thin films of CuIn1-xAlxSe2 (CIAS) were prepared by stacked elemental precursor layers in an inert ambient. The stacking sequence of precursor layers may affect the kinetics of phase formation. The soda lime glass (SLG)/Cu/Al/In/Se sample heated at 750 °C for 30 s with a temperature ramp rate of 15 °C/s may react to form single-phase CIAS thin films with a chemical composition fairly close to the predetermined value. Transmission electron microscopy (TEM) analysis of a selenized film prepared at 600 °C revealed the segregation of the content of Al to the substrate side and a relatively large variation of Al distributed in a lateral direction as compared with those of other elements. Changing the Cu and Al layer sequence may affect the reaction paths and lead to the formation of a mixture of two CIAS quaternary phases with different compositions.

  10. Synthesis and Nanostructures of Metal Selenide Precursors for Cu(In,Ga)Se2 Thin-Film Solar Cells.

    PubMed

    Cha, Ji-Hyun; Noh, Se Jin; Jung, Duk-Young

    2015-07-20

    A nanoink solution-based process was developed as a low-costing method for the fabrication of Cu(In,Ga)Se2 (CIGSe) thin-film photovoltaic cells. The sonochemical synthesis of CIGSe nanocrystals of the nanoink through step-by-step mixing of the reactants was investigated. To achieve the ideal stoichiometry of Cu(In0.7 Ga0.3 )Se2 to tune the bandgap and to fabricate high-efficiency photovoltaic cells, the synthetic parameters, the concentration of hydrazine, and the amount used of the gallium precursor were investigated. As the hydrazine concentration increased, gallium loss was observed in the CIGSe product. The gallium content in the reactant mixture strongly affected the metal stoichiometry of the prepared CIGSe nanocrystals. The nanoink solution based fabrication of thin-film photovoltaic cells was also explored, and the resulting device showed a conversion efficiency of 5.17 %.

  11. The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2003-01-01

    CuInS2 was deposited by spray pyrolysis using single-source precursors synthesized in-house. Films with either (112) or (204/220) preferred orientation always showed Cu-rich and In-rich composition respectively. The In-rich (204/220)-oriented films always contained a secondary phase evaluated as an In-rich compound, and the hindrance of (112)-oriented grain growth was confirmed by glancing angle X-ray diffraction. In conclusion, only the Cu-rich (112)-oriented films with dense columnar grains can be prepared without the secondary In-rich compound. The effect of extra Cu on the grain size and the solar cell results will be also presented.

  12. One-Pot controlled synthesis of spongelike CuInS(2) microspheres for efficient counter electrode with graphene assistance in dye-sensitized solar cells.

    PubMed

    Liu, Mingyang; Li, Guang; Chen, Xiaoshuang

    2014-02-26

    Spongelike CuInS2 3D microspheres were synthesized through a solvothermal method employing CuCl, InCl3, and thiourea as Cu, In, and S sources, respectively, and PVP as surfactant. The as-prepared products have regular spherical shapes with diameters of 0.8-3.7 μm, the spheres consisted of small nanosheets, which are composed of small nanoparticles. As an important solar cell material, its photovoltaic property was also tested and the results showed a solar energy conversion efficiency of 3.31%. With the help of reduced graphene, its conversion efficiency could be further increased to 6.18%. Compared with conventional Pt material used in counter electrodes of solar cells, this new material has an advantages of low-cost, facile synthesis and high efficiency with graphene assistance.

  13. Fabrication and centeracterization of ordered CuIn(1−x)GaxSe2 nanopore films via template-based electrodeposition

    PubMed Central

    2012-01-01

    Ordered CuIn(1−x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting. PMID:23245846

  14. Fabrication of high color rendering index white LED using Cd-free wavelength tunable Zn doped CuInS2 nanocrystals.

    PubMed

    Chung, Wonkeun; Jung, Hyunchul; Lee, Chang Hun; Kim, Sung Hyun

    2012-10-22

    Highly luminescent Cd-free Zn doped CuInS(2) nanocrystals (ZCIS NCs) were synthesized, and their properties were evaluated using X-ray diffraction, Raman, UV, and photoluminescence. The crystal structure of the ZCIS NCs was similar to the zinc blende, and the lattice constant decreased with increasing Zn concentration. By incorporation of Zn, the emission wavelength was tuned from 536 to 637 nm with concomitant enhancement of the quantum yield up to 45%. A white light emitting diodes, integrating dual ZCIS NCs (λ(em) = 567, and 617 nm) and a 460 nm InGaN LED, exhibited a high color rendering index of 84.1 with a warm color temperature of 4256.2K. The CIE-1931 chromaticity coordinates were slightly shifted from (0.3626, 0.3378) at 20 mA to (0.3480, 0.3206) at 50 mA.

  15. Controlling morphology and crystallite size of Cu(In0.7Ga0.3)Se2 nano-crystals synthesized using a heating-up method

    NASA Astrophysics Data System (ADS)

    Hsu, Wei-Hsiang; Hsiang, Hsing-I.; Chia, Chih-Ta; Yen, Fu-Su

    2013-12-01

    CuIn0.7Ga0.3Se2(CIGS) nano-crystals were successfully synthesized via a heating-up process. The non-coordinating solvent (1-octadecene) and selenium/cations ratio effects on the crystalline phase and crystallite size of CIGS nano-crystallites were investigated. It was observed that the CIGS nano-crystallite morphology changed from sheet into spherical shape as the amount of 1-octadecene addition was increased. CIGS nano-crystals were obtained in 9-20 nm sizes as the selenium/cations ratio increased. These results suggest that the monomer reactivity in the solution can be adjusted by changing the solvent type and selenium/cations ratio, hence affecting the crystallite size and distribution.

  16. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

    NASA Astrophysics Data System (ADS)

    Kasai, S.; Takahashi, Y. K.; Cheng, P.-H.; Ikhtiar, Ohkubo, T.; Kondou, K.; Otani, Y.; Mitani, S.; Hono, K.

    2016-07-01

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  17. Fabrication and centeracterization of ordered CuIn(1-x)GaxSe2 nanopore films via template-based electrodeposition.

    PubMed

    Li, Ming; Zheng, Maojun; Zhou, Tao; Li, Changli; Ma, Li; Shen, Wenzhong

    2012-12-17

    Ordered CuIn(1-x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting.

  18. Nanocrystalline Chalcopyrite Materials (CuInS2 and CuInSe2) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Castro, Stephanie L.; Bailey, Sheila G.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Hepp, Aloysius F.

    2003-01-01

    Nanometer sized particles of the chalcopyrite compounds CuInS2 and CuInSe2 were synthesized by thermal decomposition of molecular single-source precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively, in the non-coordinating solvent dioctyl phthalate at temperatures between 200 and 300 C. The nanoparticles range in size from 3 - 30 nm and are aggregated to form roughly spherical clusters of about 500 nm in diameter. X-ray diffraction of the nanoparticle powders shows greatly broadened lines indicative of very small particle sizes, which is confirmed by TEM. Peaks present in the XRD can be indexed to reference patterns for the respective chalcopyrite compounds. Optical spectroscopy and elemental analysis by energy dispersive spectroscopy support the identification of the nanoparticles as chalcopyrites.

  19. Near-Infrared Emitting CuInSe2/CuInS2 Dot Core/Rod Shell Heteronanorods by Sequential Cation Exchange

    PubMed Central

    2015-01-01

    The direct synthesis of heteronanocrystals (HNCs) combining different ternary semiconductors is challenging and has not yet been successful. Here, we report a sequential topotactic cation exchange (CE) pathway that yields CuInSe2/CuInS2 dot core/rod shell nanorods with near-infrared luminescence. In our approach, the Cu+ extraction rate is coupled to the In3+ incorporation rate by the use of a stoichiometric trioctylphosphine-InCl3 complex, which fulfills the roles of both In-source and Cu-extracting agent. In this way, Cu+ ions can be extracted by trioctylphosphine ligands only when the In–P bond is broken. This results in readily available In3+ ions at the same surface site from which the Cu+ is extracted, making the process a direct place exchange reaction and shifting the overall energy balance in favor of the CE. Consequently, controlled cation exchange can occur even in large and anisotropic heterostructured nanocrystals with preservation of the size, shape, and heterostructuring of the template NCs into the product NCs. The cation exchange is self-limited, stopping when the ternary core/shell CuInSe2/CuInS2 composition is reached. The method is very versatile, successfully yielding a variety of luminescent CuInX2 (X = S, Se, and Te) quantum dots, nanorods, and HNCs, by using Cd-chalcogenide NCs and HNCs as templates. The approach reported here thus opens up routes toward materials with unprecedented properties, which would otherwise remain inaccessible. PMID:26449673

  20. Thin-Film Solar Cells on Metal Foil Substrates for Space Power

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

    2004-01-01

    Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved

  1. Thin-Film Solar Cells on Metal Foil Substrates for Space Power

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

    2004-01-01

    Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved

  2. High output voltage of magnetic tunnel junctions with a Cu(In0.8Ga0.2)Se2 semiconducting barrier with a low resistance-area product

    NASA Astrophysics Data System (ADS)

    Mukaiyama, Koki; Kasai, Shinya; Takahashi, Yukiko K.; Kondou, Kouta; Otani, Yoshichika; Mitani, Seiji; Hono, Kazuhiro

    2017-01-01

    Magnetoresistance (MR) and its bias-voltage dependence were investigated in magnetic tunnel junctions (MTJs) with a 2-nm-thick Cu(In0.8Ga0.2)Se2 semiconducting barrier. A relatively high MR ratio of 47% was observed with a low resistance-area product RA of 0.14 Ω·µm2 at 300 K. By increasing the bias voltage, a high output voltage (as high as 24 mV) was achieved; this value is significantly higher than those ever reported for MR devices with RA values less than 0.5 Ω·µm2. These MR performance characteristics of the MTJs with Cu(In0.8Ga0.2)Se2 are suitable for high-sensitivity read head sensors for hard disk drives with a recording density higher than 2 Tbit/in.2.

  3. Lattice Dynamical Properties and Elastic Constants of the Ternary Chalcopyrite Compounds CuAlS2, CuGaS2, CuInS2, and AgGaS2

    NASA Astrophysics Data System (ADS)

    Kushwaha, A. K.; Khenata, R.; Bouhemadou, A.; Bin-Omran, S.; Haddadi, K.

    2017-02-01

    Lattice dynamics calculations have been performed for ternary chalcopyrite compounds CuAlS2, CuGaS2, CuInS2, and AgGaS2 using the proposed theoretical model. This model is applied to study the zone-centre (GAMMA = 0) phonon frequencies of CuAlS2, CuGaS2, CuInS2, and AgGaS2. The interatomic interactions up to third nearest neighbours were calculated. The calculated zone-centre phonon frequencies are found to be in very good agreement with observed and previous calculated data available in the literature. Single crystal elastic constants and related properties for these materials were also calculated and compared with the available data in the scientific literature.

  4. Lattice Dynamical Properties and Elastic Constants of the Ternary Chalcopyrite Compounds CuAlS2, CuGaS2, CuInS2, and AgGaS2

    NASA Astrophysics Data System (ADS)

    Kushwaha, A. K.; Khenata, R.; Bouhemadou, A.; Bin-Omran, S.; Haddadi, K.

    2017-07-01

    Lattice dynamics calculations have been performed for ternary chalcopyrite compounds CuAlS2, CuGaS2, CuInS2, and AgGaS2 using the proposed theoretical model. This model is applied to study the zone-centre (GAMMA = 0) phonon frequencies of CuAlS2, CuGaS2, CuInS2, and AgGaS2. The interatomic interactions up to third nearest neighbours were calculated. The calculated zone-centre phonon frequencies are found to be in very good agreement with observed and previous calculated data available in the literature. Single crystal elastic constants and related properties for these materials were also calculated and compared with the available data in the scientific literature.

  5. Optical spectroscopy reveals transition of CuInS2/ZnS to CuxZn1-xInS2/ZnS:Cu alloyed quantum dots with resultant double-defect luminescence

    NASA Astrophysics Data System (ADS)

    Yan, Ruolin; Zhang, Wenxia; Wu, Wenhui; Dong, Xingmin; Wang, Qiqi; Fan, Jiyang

    2016-12-01

    The structure and luminescence mechanisms of the CuInS2 quantum dots (QDs) after epitaxial growth of ZnS shell are in debate. The light absorption/emission spectroscopy reveals that after ZnS shell growth the cation diffusion at the CuInS2/ZnS interface results in formation of the alloyed CuxZn1- xInS2/ZnS:Cu QDs. These core/shell QDs exhibit dual-color photoluminescence with abnormal blue shift with decreasing excitation photon energy. The results show that the green and orange emissions originate separately from defects in the core and the shell. The absorption tail of the ZnS QDs turns from Urbach to Halperin-Lax type after Cu doping.

  6. An investigation on the growth of thin chalcopyrite CuInSe2 films by selenization of Cu-In alloys in a box

    NASA Astrophysics Data System (ADS)

    Parretta, A.; Addonizio, M. L.; Loreti, S.; Quercia, L.; Jayaraj, M. K.

    1998-01-01

    The morphological and structural properties of copper-indium alloys selenized in a box by selenium vapours have been studied by varying the thermal cycle of the selenization process. In the first series of selenizations, equal metallic precursors were exposed for 30 min to the selenium vapours at different temperatures in the range 175-405°C The chalcopyrite CuInSe 2 phase was found at temperatures as low as 250°C and as a single phase at T > 375°C. At low temperatures different copper selenides were found, like CuSe, Cu 2 - xSe and CuSe 2, which affected in a different way the composition and morphology of the film. Indium loss was detected in the 250-300°C range and was attributed to the evolution in the gas phase of the In 2Se species. Short selenization cycles were also used with the purpose of identifying the chemical precursors of CuInSe 2. The determination of the selenium content in the alloys at different temperatures allowed us to determine a 7 kcal/mol activation energy for the kinetics of selenium incorporation. Long selenizations at 450°C allowed us to obtain a large-grained, compact layer of chalcopyrite CuInSe 2 which could be used for the fabrication of photovoltaic devices.

  7. KF post-deposition treatment of industrial Cu(In, Ga)(S, Se)2 thin-film surfaces: Modifying the chemical and electronic structure

    DOE PAGES

    Mezher, Michelle; Mansfield, Lorelle M.; Horsley, Kimberly; ...

    2017-08-14

    The chemical and electronic structures of industrial chalcopyrite photovoltaic absorbers after KF post-deposition treatment (KF-PDT) are investigated using electron spectroscopies to probe the occupied and unoccupied electronic states. In contrast to a variety of recent publications on the impact of KF-PDT, this study focuses on industrial Cu(In,Ga)(S,Se)2 absorbers that also contain sulfur at the surface. We find that the KF-PDT removes surface adsorbates and oxides and also observe a change in the S/Se ratio. Furthermore, the KF-PDT leads to a Cu reduction at the surface but to a much lower degree than the strongly Cu-depleted or even Cu-free surfaces reportedmore » for (non-industrial) sulfur-free Cu(In,Ga)Se2 absorbers. Furthermore, the valence band maximum at the surface is found at a lower energy compared to the untreated absorber, and the conduction band minimum is found at a higher energy, overall revealing a widening of the bandgap in the surface region.« less

  8. KF post-deposition treatment of industrial Cu(In, Ga)(S, Se)2 thin-film surfaces: Modifying the chemical and electronic structure

    NASA Astrophysics Data System (ADS)

    Mezher, Michelle; Mansfield, Lorelle M.; Horsley, Kimberly; Blum, Monika; Wieting, Robert; Weinhardt, Lothar; Ramanathan, Kannan; Heske, Clemens

    2017-08-01

    The chemical and electronic structures of industrial chalcopyrite photovoltaic absorbers after KF post-deposition treatment (KF-PDT) are investigated using electron spectroscopies to probe the occupied and unoccupied electronic states. In contrast to a variety of recent publications on the impact of KF-PDT, this study focuses on industrial Cu(In,Ga)(S,Se)2 absorbers that also contain sulfur at the surface. We find that the KF-PDT removes surface adsorbates and oxides and also observe a change in the S/Se ratio. Furthermore, the KF-PDT leads to a Cu reduction at the surface but to a much lower degree than the strongly Cu-depleted or even Cu-free surfaces reported for (non-industrial) sulfur-free Cu(In,Ga)Se2 absorbers. The valence band maximum at the surface is found at a lower energy compared to the untreated absorber, and the conduction band minimum is found at a higher energy, overall revealing a widening of the bandgap in the surface region.

  9. CONTROLLING THE CHARACTERISTICS OF LASER LIGHT: Kinetics of bleaching and induced absorption in glasses with CuInS2xSe2(1-x) microcrystallites under picosecond excitation

    NASA Astrophysics Data System (ADS)

    Yumashev, K. V.; Mikhaĭlov, V. P.; Bondar', I. V.; Demchuk, M. I.; Prokoshin, P. V.; Gurin, V. S.; Zhmako, S. P.

    1993-09-01

    We investigate the intensity dependence of the transmission and kinetics of the change in absorption of glasses with CuInS2xSe2(1-x) microcrystallites excited by 15 ps pulses at wavelengths of 1.08 and 0.54 μm. For photon energies slightly larger than the band gap, low excitation intensities (50 MW/cm2) lead to a bleached state with a relaxation time of ~ 11 ps. This effect is caused by a filling of quantum-well levels in the CuInS2xSe2(1-x) microcrystallites. As the pumping level increases, a fast (~40 ps) transition is observed from bleaching to strong induced absorption. The latter has a relaxation time of ~4 ns and is associated with two-photon interband transitions. At high pump intensities (~ 10 GW/cm2), only induced absorption is observed. For photon excitation energies that considerably exceed the band gap, bleaching is not observed, and increasing the pump level leads to only an induced absorption. We have estimated the two-photon absorption parameter of glasses with CuInS2xSe2(1-x) microcrystallites at a wavelength of 1.08 μm. By using these glasses for mode locking of pulsed Nd:YAG and Nd:YAlO3 lasers we have obtained ultrashort pulses with durations of 36 and 16 ps, respectively.

  10. Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

    SciTech Connect

    Martin, Ina T.; Oyster, Tricia M.; Mansfield, Lorelle M.; Matthews, Rachael; Pentzer, Emily B.; French, Roger H.; Peshek, Timothy J.

    2016-11-21

    Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In, Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

  11. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  12. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition.

    PubMed

    Chen, Shih-Chen; Hsieh, Dan-Hua; Jiang, Hsin; Liao, Yu-Kuang; Lai, Fang-I; Chen, Chyong-Hua; Luo, Chih Wei; Juang, Jenh-Yih; Chueh, Yu-Lun; Wu, Kaung-Hsiung; Kuo, Hao-Chung

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.

  13. Growth and characterization of Cu(In,Ga)Se2 thin films by nanosecond and femtosecond pulsed laser deposition

    PubMed Central

    2014-01-01

    In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD. PMID:24959108

  14. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  15. Effect of ph on the Electrodeposition of Cu(In, Al)Se2 from Aqueous Solution in Presence of Citric Acid as Complexing Agent

    NASA Astrophysics Data System (ADS)

    Ganjkhanlou, Yadolah; Ebadzadeh, Touradj; Kazemzad, Mahmood; Maghsoudipour, Amir; Kianpour-Rad, Mansoor

    2015-05-01

    Effect of pH on the one-step electrodeposition of Cu(In, Al)Se2 chalcopyrite layer in the presence of citric acid has been investigated by applying different electrochemical and characterization techniques. It has been observed that at pH of 1.5, nanocrystalline phase of chalcopyrite and small amount of binary phase of Cu2Se with overall composition of Cu0.91In0.32Al0.39Se2 have been deposited. On the other hand, at pH of 4, the film composition changed to Cu1.9In0.05Al0.21Se2 and an additional binary phase of copper selenide (CuSe) has also been formed. Morphological investigation illustrated that smooth and compact layer with fine spherical particles having the size of 20 nm has been obtained at pH of 1.5 whereas mixture of planar and spherical particles with size of 450-550 nm have been formed at pH of 4. In alkaline environment (pH 9), the deposition current has been noticeably decreased and no deposition occurred due to the formation of a stable complex of citric acid with metal ions. The mechanism of citric acid interaction with metal ions at different pH has also been studied by cyclic voltammetry measurement.

  16. Solution-Processed Cu(In, Ga)(S, Se)2 Nanocrystal as Inorganic Hole-Transporting Material for Efficient and Stable Perovskite Solar Cells.

    PubMed

    Xu, Lu; Deng, Lin-Long; Cao, Jing; Wang, Xin; Chen, Wei-Yi; Jiang, Zhiyuan

    2017-12-01

    Perovskite solar cells are emerging as one of the most promising candidates for solar energy harvesting. To date, most of the high-performance perovskite solar cells have exclusively employed organic hole-transporting materials (HTMs) such as 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) or polytriarylamine (PTAA) which are often expensive and have low hole mobility. Almost all these HTMs reported needed lithium salt, e.g., lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI) doping, to improve hole mobility and performance. However, the use of Li-TFSI should be avoided because the hygroscopic nature of Li-TFSI could cause decomposition of perovskite and reduce device stability. Herein, we employed solution-processed CuIn0.1Ga0.9(S0.9Se0.1)2 (CIGSSe) nanocrystals as a novel inorganic HTM in perovskite solar cells. A power conversion efficiency of 9.15% was obtained for CIGSSe-based devices with improved stability, compared to devices using spiro-OMeTAD as HTM. This work offers a promising candidate of Cu-based inorganic HTM for efficient and stable perovskite solar cells.

  17. Self-assembled synthesis of 3D Cu(In(1-x)Ga(x))Se2 nanoarrays by one-step electroless deposition into ordered AAO template.

    PubMed

    Zhang, Bin; Zhou, Tao; Zheng, Maojun; Xiong, Zuzhou; Zhu, Changqing; Li, Hong; Wang, Faze; Ma, Li; Shen, Wenzhong

    2014-07-25

    Quaternary nanostructured Cu(In1 - xGax)Se2 (CIGS) arrays were successfully fabricated via a novel and simple solution-based protocol on the electroless deposition method, using a flexible, highly ordered anodic aluminium oxide (AAO) substrate. This method does not require electric power, complicated sensitization processes, or complexing agents, but provides nearly 100% pore fill factor to AAO templates. The field emission scanning electron microscopy (FE-SEM) images show that we obtained uniformly three-dimensional nanostructured CIGS arrays, and we can tailor the diameter and wall thicknesses of the nanostructure by adjusting the pore diameter of the AAO and metal Mo layer. Their chemical composition was determined by energy-dispersive spectroscopy analysis, which is very close to the stoichiometric value. The Raman spectroscopy, x-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) further confirm the formation of nanostructured CIGS with prominent chalcopyrite structure. The nanostructured CIGS arrays can support the design of low-cost, highlight-trapping, and enhanced carrier collection nanostructured solar cells.

  18. Enhanced thermoelectric performance of a chalcopyrite compound CuIn3Se5−xTex (x = 0~0.5) through crystal structure engineering

    PubMed Central

    Lu, Yufu; Chen, Shaoping; Wu, Wenchang; Du, Zhengliang; Chao, Yimin; Cui, Jiaolin

    2017-01-01

    In this work the chalcopyrite CuIn3Se5−xTex (x = 0~0.5) with space group through isoelectronic substitution of Te for Se have been prepared, and the crystal structure dilation has been observed with increasing Te content. This substitution allows the anion position displacement ∆u = 0.25-u to be zero at x ≈ 0.15. However, the material at x = 0.1 (∆u = 0.15 × 10−3), which is the critical Te content, presents the best thermoelectric (TE) performance with dimensionless figure of merit ZT = 0.4 at 930 K. As x value increases from 0.1, the quality factor B, which informs about how large a ZT can be expected for any given material, decreases, and the TE performance degrades gradually due to the reduction in nH and enhancement in κL. Combining with the ZTs from several chalcopyrite compounds, it is believable that the best thermoelectric performance can be achieved at a certain ∆u value (∆u ≠ 0) for a specific space group if their crystal structures can be engineered. PMID:28057940

  19. Self-assembled synthesis of 3D Cu(In1 - xGax)Se2 nanoarrays by one-step electroless deposition into ordered AAO template

    NASA Astrophysics Data System (ADS)

    Zhang, Bin; Zhou, Tao; Zheng, Maojun; Xiong, Zuzhou; Zhu, Changqing; Li, Hong; Wang, Faze; Ma, Li; Shen, Wenzhong

    2014-07-01

    Quaternary nanostructured Cu(In1 - xGax)Se2 (CIGS) arrays were successfully fabricated via a novel and simple solution-based protocol on the electroless deposition method, using a flexible, highly ordered anodic aluminium oxide (AAO) substrate. This method does not require electric power, complicated sensitization processes, or complexing agents, but provides nearly 100% pore fill factor to AAO templates. The field emission scanning electron microscopy (FE-SEM) images show that we obtained uniformly three-dimensional nanostructured CIGS arrays, and we can tailor the diameter and wall thicknesses of the nanostructure by adjusting the pore diameter of the AAO and metal Mo layer. Their chemical composition was determined by energy-dispersive spectroscopy analysis, which is very close to the stoichiometric value. The Raman spectroscopy, x-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) further confirm the formation of nanostructured CIGS with prominent chalcopyrite structure. The nanostructured CIGS arrays can support the design of low-cost, highlight-trapping, and enhanced carrier collection nanostructured solar cells.

  20. A facile in situ synthesis route for CuInS(2) quantum-dots/In(2)S(3) co-sensitized photoanodes with high photoelectric performance.

    PubMed

    Wang, Yuan-Qiang; Rui, Yi-Chuan; Zhang, Qing-Hong; Li, Yao-Gang; Wang, Hong-Zhi

    2013-11-27

    CuInS2 quantum-dot sensitized TiO2 photoanodes with In2S3 buffer layer were in situ prepared via chemical bath deposition of In2S3, where the Cd-free In2S3 layer then reacted with TiO2/CuxS which employed a facile SILAR process to deposit CuxS quantum dots on TiO2 film, followed by a covering process with ZnS layer. Polysulfide electrolyte and Cu2S on FTO glass counter electrode were used to provide higher photovoltaic performance of the constructed devices. The characteristics of the quantum dots sensitized solar cells were studied in more detail by optical measurements, photocurrent-voltage performance measurements, and impedance spectroscopy. On the basis of optimal CuxS SILAR cycles, the best photovoltaic performance with power conversion efficiency (η) of 1.62% (Jsc = 6.49 mA cm(-2), Voc = 0.50 V, FF = 0.50) under full one-sun illumination was achieved by using Cu2S counter electrode. Cu2S-FTO electrode exhibits superior electrocatalytic ability for the polysulfide redox reactions relative to that of Pt-FTO electrode.

  1. Enhancing the light absorbance of polymer solar cells by introducing pulsed laser-deposited CuIn0.8Ga0.2Se2 nanoparticles

    PubMed Central

    2014-01-01

    Evenly separated crystalline CuIn0.8Ga0.2Se2 (CIGS) nanoparticles are deposited on ITO-glass substrate by pulsed laser deposition. Such CIGS layers are introduced between conjugated polymer layers and ITO-glass substrates for enhancing light absorbance of polymer solar cells. The P3HT:PCBM absorbance between 300 and 650 nm is enhanced obviously due to the introduction of CIGS nanoparticles. The current density-voltage curves of a P3HT:PCBM/CIGS solar cell demonstrate that the short-circuit current density is improved from 0.77 to 1.20 mA/cm2. The photoluminescence spectra show that the excitons in the polymer are obviously quenched, suggesting that the charge transfer between the P3HT:PCBM and CIGS occurred. The results reveal that the CIGS nanoparticles may exhibit the localized surface plasmon resonance effect just as metallic nanostructures. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:24994961

  2. Enhancing the light absorbance of polymer solar cells by introducing pulsed laser-deposited CuIn0.8Ga0.2Se2 nanoparticles.

    PubMed

    Zhao, Yu; Li, Hui; Liu, Xu-Jun; Guan, Lei-Lei; Li, Yan-Li; Sun, Jian; Ying, Zhi-Feng; Wu, Jia-Da; Xu, Ning

    2014-01-01

    Evenly separated crystalline CuIn0.8Ga0.2Se2 (CIGS) nanoparticles are deposited on ITO-glass substrate by pulsed laser deposition. Such CIGS layers are introduced between conjugated polymer layers and ITO-glass substrates for enhancing light absorbance of polymer solar cells. The P3HT:PCBM absorbance between 300 and 650 nm is enhanced obviously due to the introduction of CIGS nanoparticles. The current density-voltage curves of a P3HT:PCBM/CIGS solar cell demonstrate that the short-circuit current density is improved from 0.77 to 1.20 mA/cm(2). The photoluminescence spectra show that the excitons in the polymer are obviously quenched, suggesting that the charge transfer between the P3HT:PCBM and CIGS occurred. The results reveal that the CIGS nanoparticles may exhibit the localized surface plasmon resonance effect just as metallic nanostructures. 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b.

  3. Enhanced thermoelectric performance of a chalcopyrite compound CuIn3Se5‑xTex (x = 0~0.5) through crystal structure engineering

    NASA Astrophysics Data System (ADS)

    Lu, Yufu; Chen, Shaoping; Wu, Wenchang; Du, Zhengliang; Chao, Yimin; Cui, Jiaolin

    2017-01-01

    In this work the chalcopyrite CuIn3Se5‑xTex (x = 0~0.5) with space group through isoelectronic substitution of Te for Se have been prepared, and the crystal structure dilation has been observed with increasing Te content. This substitution allows the anion position displacement ∆u = 0.25-u to be zero at x ≈ 0.15. However, the material at x = 0.1 (∆u = 0.15 × 10‑3), which is the critical Te content, presents the best thermoelectric (TE) performance with dimensionless figure of merit ZT = 0.4 at 930 K. As x value increases from 0.1, the quality factor B, which informs about how large a ZT can be expected for any given material, decreases, and the TE performance degrades gradually due to the reduction in nH and enhancement in κL. Combining with the ZTs from several chalcopyrite compounds, it is believable that the best thermoelectric performance can be achieved at a certain ∆u value (∆u ≠ 0) for a specific space group if their crystal structures can be engineered.

  4. Solution-Processed Cu(In, Ga)(S, Se)2 Nanocrystal as Inorganic Hole-Transporting Material for Efficient and Stable Perovskite Solar Cells

    NASA Astrophysics Data System (ADS)

    Xu, Lu; Deng, Lin-Long; Cao, Jing; Wang, Xin; Chen, Wei-Yi; Jiang, Zhiyuan

    2017-02-01

    Perovskite solar cells are emerging as one of the most promising candidates for solar energy harvesting. To date, most of the high-performance perovskite solar cells have exclusively employed organic hole-transporting materials (HTMs) such as 2,2',7,7'-tetrakis-( N, N-di- p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) or polytriarylamine (PTAA) which are often expensive and have low hole mobility. Almost all these HTMs reported needed lithium salt, e.g., lithium bis(trifluoromethylsulfonyl)imide (Li-TFSI) doping, to improve hole mobility and performance. However, the use of Li-TFSI should be avoided because the hygroscopic nature of Li-TFSI could cause decomposition of perovskite and reduce device stability. Herein, we employed solution-processed CuIn0.1Ga0.9(S0.9Se0.1)2 (CIGSSe) nanocrystals as a novel inorganic HTM in perovskite solar cells. A power conversion efficiency of 9.15% was obtained for CIGSSe-based devices with improved stability, compared to devices using spiro-OMeTAD as HTM. This work offers a promising candidate of Cu-based inorganic HTM for efficient and stable perovskite solar cells.

  5. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1991--15 January 1992

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  6. Thin Clouds

    Atmospheric Science Data Center

    2013-04-18

    ... their delicate appearance, thin, feathery clouds of ice crystals called cirrus may contribute to global warming. Some scientists ... minutes after MISR imaged the cloud from space. At the same time, another NASA high-altitude jet, the WB-57, flew right through the ...

  7. Interaction of ultra-short laser pulses with CIGS and CZTSe thin films

    NASA Astrophysics Data System (ADS)

    Gečys, P.; Markauskas, E.; Dudutis, J.; Račiukaitis, G.

    2014-01-01

    The thin-film solar cell technologies based on complex quaternary chalcopyrite and kesterite materials are becoming more attractive due to their potential for low production costs and optimal spectral performance. As in all thin-film technologies, high efficiency of small cells might be maintained with the transition to larger areas when small segments are interconnected in series to reduce photocurrent and related ohmic losses in thin films. Interconnect formation is based on the three scribing steps, and the use of a laser is here crucial for performance of the device. We present our simulation and experimental results on the ablation process investigations in complex CuIn1- x Ga x Se2 (CIGS) and Cu2ZnSn(S,Se)4 (CZTSe) cell's films using ultra-short pulsed infrared (~1 μm) lasers which can be applied to the damage-free front-side scribing processes. Two types of processes were investigated—direct laser ablation of ZnO:Al/CIGS films with a variable pulse duration of a femtosecond laser and the laser-induced material removal with a picosecond laser in the ZnO:Al/CZTSe structure. It has been found that the pulse energy and the number of laser pulses have a significantly stronger effect on the ablation quality in ZnO:Al/CIGS thin films rather than the laser pulse duration. For the thin-film scribing applications, it is very important to carefully select the processing parameters and use of ultra-short femtosecond pulses does not have a significant advantage compared to picosecond laser pulses. Investigations with the ZnO:Al/CZTSe thin films showed that process of the absorber layer removal was triggered by a micro-explosive effect induced by high pressure of sublimated material due to a rapid temperature increase at the molybdenum-CZTSe interface.

  8. Preparation of high-oriented molybdenum thin films using DC reactive magnetronsputtering

    NASA Astrophysics Data System (ADS)

    Shang, Zhengguo; Li, Dongling; Yin, She; Wang, Shengqiang

    2017-03-01

    Since molybdenum (Mo) thin film has been used widely recently, it attracts plenty of attention, like it is a good candidate of back contact material for CuIn1‑xGaxSe2‑ySy (CIGSeS) solar cells development; thanks to its more conductive and higher adhesive property. Besides, molybdenum thin film is an ideal material for aluminum nitride (AlN) thin film preparation and attributes to the tiny (‑1.0%) lattice mismatch between Mo and AlN. As we know that the quality of Mo thin film is mainly dependent on process conditions, it brings a practical significance to study the influence of process parameters on Mo thin film properties. In this work, various sputtering conditions are employed to explore the feasibility of depositing a layer of molybdenum film with good quality by DC reactive magnetron sputtering. The influence of process parameters such as power, gas flow, substrate temperature and process time on the crystallinity and crystal orientation of Mo thin films is investigated. X-ray diffraction (XRD) measurements and atomic force microscope (AFM) are used to characterize the properties and surface roughness, respectively. According to comparative analysis on the results, process parameters are optimized. The full width at half maximum (FWHM) of the rocking curves of the (110) Mo is decreased to 2.7∘, and the (110) Mo peaks reached 1.2 × 105 counts. The grain size and the surface roughness have been measured as 20 Å and 3.8 nm, respectively, at 200∘C.

  9. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  10. Large-scale synthesis of highly emissive and photostable CuInS2/ZnS nanocrystals through hybrid flow reactor

    NASA Astrophysics Data System (ADS)

    Lee, Jun; Han, Chang-Soo

    2014-02-01

    We report a high-yield, low-cost synthesis route to colloidal CuInS2/ZnS (CIS/ZnS) nanocrystals (NCs) with Cu vacancies in the crystal lattice. Yellow-emitting CIS/ZnS core/shell NCs of high luminescence were facilely synthesized via a stepwise, consecutive hybrid flow reactor approach. It is based on serial combination of a batch-type mixer and a flow-type furnace. In this reactor, the flow rate of the solutions was typically 1 mL/min, 100 times larger than that of conventional microfluidic reactors. This method can produce gram quantities of material with a chemical yield in excess of 90% with minimal solvent waste. This is a noninjection-based approach in 1-dodecanethiol (DDT) with excellent synthetic reproducibility and large-scale capability. The optical features and structure of the obtained CIS/ZnS NCs have been characterized by UV-vis and fluorescence spectroscopies, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX) and high-resolution transmission electron microscopy (HRTEM). The resulting CIS/ZnS NCs in chloroform exhibit quantum yield (QY) of 61.4% with photoemission peaking at 561 nm and full width at half maximum (FWHM) of 92 nm. The as-synthesized CIS/ZnS NCs were proven to have excellent photostability. The synthesized CIS/ZnS NCs can be a promising fluorescent probe for biological imaging and color converting material for light-emitting diode due to Cd-free constituents.

  11. In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells

    NASA Astrophysics Data System (ADS)

    Chen, Zhigang; Tang, Minghua; Song, Linlin; Tang, Guoqiang; Zhang, Bingjie; Zhang, Lisha; Yang, Jianmao; Hu, Junqing

    2013-08-01

    Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS2 (CIS) layer as the photoabsorption material on nanoporous TiO2 film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO2 film in ethanol solution containing InCl3 · 4H2O, CuSO4 · 5H2O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl3 concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl3 concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO2 film, and CIS superstructures are in fact composed of ultrathin nanoplates as `petals' with plenty of nanopores. In addition, the nanopores of TiO2 film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO2/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure. PACS: 81.15.-z; 84.60.Jt; 73.40.Lq

  12. Large-scale synthesis of highly emissive and photostable CuInS2/ZnS nanocrystals through hybrid flow reactor.

    PubMed

    Lee, Jun; Han, Chang-Soo

    2014-02-17

    We report a high-yield, low-cost synthesis route to colloidal CuInS2/ZnS (CIS/ZnS) nanocrystals (NCs) with Cu vacancies in the crystal lattice. Yellow-emitting CIS/ZnS core/shell NCs of high luminescence were facilely synthesized via a stepwise, consecutive hybrid flow reactor approach. It is based on serial combination of a batch-type mixer and a flow-type furnace. In this reactor, the flow rate of the solutions was typically 1 mL/min, 100 times larger than that of conventional microfluidic reactors. This method can produce gram quantities of material with a chemical yield in excess of 90% with minimal solvent waste. This is a noninjection-based approach in 1-dodecanethiol (DDT) with excellent synthetic reproducibility and large-scale capability. The optical features and structure of the obtained CIS/ZnS NCs have been characterized by UV-vis and fluorescence spectroscopies, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX) and high-resolution transmission electron microscopy (HRTEM). The resulting CIS/ZnS NCs in chloroform exhibit quantum yield (QY) of 61.4% with photoemission peaking at 561 nm and full width at half maximum (FWHM) of 92 nm. The as-synthesized CIS/ZnS NCs were proven to have excellent photostability. The synthesized CIS/ZnS NCs can be a promising fluorescent probe for biological imaging and color converting material for light-emitting diode due to Cd-free constituents.

  13. In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells

    PubMed Central

    2013-01-01

    Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS2(CIS) layer as the photoabsorption material on nanoporous TiO2 film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO2 film in ethanol solution containing InCl3 · 4H2O, CuSO4 · 5H2O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl3 concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl3 concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO2 film, and CIS superstructures are in fact composed of ultrathin nanoplates as ‘petals’ with plenty of nanopores. In addition, the nanopores of TiO2 film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO2/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure. PMID:23947562

  14. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  15. New Layered Structures of Cuprous Chalcogenides as Thin Film Solar Cell Materials: Cu2Te and Cu2Se

    SciTech Connect

    Nguyen, Manh; Choi, Jin-Ho; Zhao, Xin; Wang, Cai-Zhuang; Zhang, Zhenyu; Ho, Cai-Ming

    2013-10-01

    The stable crystal structures of two cuprous chalcogenides of Cu2X (X = Te or Se) are predicted using an adaptive genetic algorithm in combination with first-principles density functional theory calculations. Both systems are found to prefer a unique and previously unrecognized layered structure, with the total energies much lower than all structures proposed in the literature so far. The newly discovered structures are further shown to be dynamically and mechanically stable, and possess electronic properties consistent with existing experimental observations. In particular, their layered nature is expected to prevail over other structural forms at the interfaces of thin-film solar cells, and knowledge about the precise atomic structures of the interfaces is a prerequisite for achieving long-term stability and high efficiency of CdTe and Cu(In; Ga)Se2 solar cells.

  16. The effects of KCN etching on Cu-rich epitaxial CuInSe{sub 2} thin films

    SciTech Connect

    Fons, P.; Niki, S.; Yamada, A.; Kurafuji, T.; Nishitani, M.; Wada, T.

    1996-12-31

    A series of Cu-rich CuInSe{sub 2} epitaxial thin films were grown by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 C. All samples were grown with an excess of Cu. Electron microprobe analysis (EPMA) indicated a Cu/In ratio of about 2.1--2.6 in the as-grown films. Additionally, the Se/(In+Cu) ratio was observed to be {approximately}0.95 indicating that the films were slightly Se poor. These Cu-rich samples were etched in a KCN solution for periods ranging from 30 seconds to 3 minutes. EPMA measurements indicated that the bulk Cu/In ratio was reduced to {approximately}0.92 in all films regardless of etching time. Atomic force microscopy (AFM) was used to characterize the topology of each sample before and after etching. These measurements indicated that the precipitates present on the as-grown films were removed and large nearly isotropic holes were etched into the sample to a depth of over 1,000 {angstrom} even for etching times as short as 30 seconds. The samples were also evaluate both before and after etching using a Phillips MRD diffractometer with parallel beam optics and a 18,000 watt Cu rotating anode X-ray source in the chalcopyrite [001] , [101], and [112] directions. A peak was observed at {approximately}15 degrees in the [001] scan after etching consistent with the presence of the ordered vacancy compound, CuIn{sub 2}Se{sub 5}.

  17. Investigation of bulk hybrid heterojunction solar cells based on Cu(In,Ga)Se2 nanocrystals.

    PubMed

    Yen, Yu-Ting; Lin, Yi-Kai; Chang, Shu-Hao; Hong, Hwen-Fen; Tuan, Hsing-Yu; Chueh, Yu-Lun

    2013-07-19

    This work presents the systematic studies of bulk hybrid heterojunction solar cells based on Cu(In, Ga)Se2 (CIGS) nanocrystals (NCs) embedded in poly(3-hexylthiophene) matrix. The CIGS NCs of approximately 17 nm in diameter were homogeneously blended with P3HT layer to form an active layer of a photovoltaic device. The blend ratios of CIGS NCs to P3HT, solvent effects on thin film morphologies, interface between P3HT/CIGS NCs and post-production annealing of devices were investigated, and the best performance of photovoltaic devices was measured under AM 1.5 simulated solar illumination (100 mW/cm2).

  18. Optical, electrical and structural characterization of CuInSe2 thin films

    NASA Astrophysics Data System (ADS)

    Calderón, C.; Gordillo, G.; Romero, E.; Bolaños, W.; Bartolo-Pérez, P.

    2005-07-01

    The present issue of physica status solidi (b) comprises papers presented at the XVII Latin American Symposium on Solid State Physics (SLAFES 2004) in Havana, Cuba, 6-9 December 2004. Further papers from this conference are published in phys. stat. sol. (c) 2, No. 10 (2005).The cover picture refers to the article [1] on polycrystalline CuInSe2 films by Clara Calderón et al. and shows the crystal structure of CuInSe2 (right) and that of the In-rich phase CuIn3Se5 (left) which were used for the simulation and analysis of the X-ray diffraction spectra.Clara Lilia Calderón Triana is teacher at the Solar Cells Laboratory of Universidad Nacional de Colombia in Bogotá where she has been working on solar cells and semiconductor materials since 1995. In particular, she is fabricating thin film solar cells based on CuInSe2 and Cu(In,Ga)Se2. At SLAFES 2004, Clara Calderón received the physica status solidi Young Researcher Award for her second presentation entitled Study of electrical transport properties of ZnO thin films used as front contact of solar cells [2] which is published as Editor's Choice of this issue.

  19. Thin Films

    NASA Astrophysics Data System (ADS)

    Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

    2014-11-01

    Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

  20. Thin Films

    NASA Astrophysics Data System (ADS)

    Naffouti, Wafa; Nasr, Tarek Ben; Mehdi, Ahmed; Kamoun-Turki, Najoua

    2014-11-01

    Titanium dioxide (TiO2) thin films were synthesized on glass substrates by spray pyrolysis. The effect of solution flow rate on the physical properties of the films was investigated by use of x-ray diffraction (XRD), scanning electron microscopy, atomic force microscopy (AFM), and spectrophotometry techniques. XRD analysis revealed the tetragonal anatase phase of TiO2 with highly preferred (101) orientation. AFM images showed that grain size on top of TiO2 thin films depended on solution flow rate. An indirect band gap energy of 3.46 eV was determined by means of transmission and reflection measurements. The envelope method, based on the optical transmission spectrum, was used to determine film thickness and optical constants, for example real and imaginary parts of the dielectric constant, refractive index, and extinction coefficient. Ultraviolet and visible photoluminescence emission peaks were observed at room temperature. These peaks were attributed to the intrinsic emission and to the surface defect states, respectively.

  1. The effects of Na on high pressure phases of CuIn(0.5)Ga(0.5)Se(2) from ab initio calculation.

    PubMed

    Pluengphon, P; Bovornratanaraks, T; Vannarat, S; Pinsook, U

    2012-03-07

    The effects of Na atoms on high pressure structural phase transitions of CuIn(0.5)Ga(0.5)Se(2) (CIGS) were studied by an ab initio method using density functional theory. At ambient pressure, CIGS is known to have chalcopyrite (I42d) structure. The high pressure phase transitions of CIGS were proposed to be the same as the order in the CuInSe(2) phase transitions which are I42d → Fm3m → Cmcm structures. By using the mixture atoms method, the Na concentration in CIGS was studied at 0.1, 1.0 and 6.25%. The positive mixing enthalpy of Na at In/Ga sites (Na(InGa)) is higher than that of Na at Cu sites (Na(Cu)). It confirmed previous studies that Na preferably substitutes on the Cu sites more than the (In, Ga) sites. From the energy-volume curves, we found that the effect of the Na substitutes is to reduce the hardness of CIGS under high pressure. The most significant effects occur at 6.25% Na. We also found that the electronic density of states of CIGS near the valence band maximum is increased noticeably in the chalcopyrite phase. The band gap is close in the cubic and orthorhombic phases. Also, the Na(Cu)-Se bond length in the chalcopyrite phase is significantly reduced at 6.25% Na, compared with the pure Cu-Se bond length. Consequently, the energy band gap in this phase is wider than in pure CIGS, and the gap increased at the rate of 31 meV GPa(-1) under pressure. The Na has a small effect on the transition pressure. The path of transformation from the cubic to orthorhombic phase was derived. The Cu-Se plane in the cubic phase displaced relatively parallel to the (In, Ga)-Se plane by 18% in order to transform to the Cmcm phase. The enthalpy barrier is 0.020 eV/atom, which is equivalent to a thermal energy of 248 K. We predicted that Fm3m and Cmcm can coexist in some pressure range.

  2. Self-anti-reflective density-modulated thin films by HIPS technique

    NASA Astrophysics Data System (ADS)

    Keles, Filiz; Badradeen, Emad; Karabacak, Tansel

    2017-08-01

    A critical factor for an efficient light harvesting device is reduced reflectance in order to achieve high optical absorptance. In this regard, refractive index engineering becomes important to minimize reflectance. In this study, a new fabrication approach to obtain density-modulated CuIn x Ga(1-x)Se2 (CIGS) thin films with self-anti-reflective properties has been demonstrated. Density-modulated CIGS samples were fabricated by utilizing high pressure sputtering (HIPS) at Ar gas pressure of 2.75 × 10-2 mbar along with conventional low pressure sputtering (LPS) at Ar gas pressure of 3.0 × 10-3 mbar. LPS produces conventional high density thin films while HIPS produces low density thin films with approximate porosities of ˜15% due to a shadowing effect originating from the wide-spread angular atomic of HIPS. Higher pressure conditions lower the film density, which also leads to lower refractive index values. Density-modulated films that incorporate a HIPS layer at the side from which light enters demonstrate lower reflectance thus higher absorptance compared to conventional LPS films, although there is not any significant morphological difference between them. This result can be attributed to the self-anti-reflective property of the density-modulated samples, which was confirmed by the reduced refractive index calculated for HIPS layer via an envelope method. Therefore, HIPS, a simple and scalable approach, can provide enhanced optical absorptance in thin film materials and eliminate the need for conventional light trapping methods such as anti-reflective coatings of different materials or surface texturing.

  3. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy.

    PubMed

    Klein, Andreas

    2015-04-10

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  4. [Study on the modified surface layers of the CIGS thin films by Raman spectra].

    PubMed

    Liu, Wei; Sun, Yun; Li, Feng-Yan; He, Qing; Li, Chang-Jian; Tian, Jian-Guo

    2007-04-01

    In the present paper, the properties of Cu(In(1-x) Ga(x)) Se2 (CIGS) thin film absorber materials for the solar cells obtained by selenization of the precursors with In-rich or CuGa-rich surface layers were studied by XRD, SEM and Raman spectra. The photovoltaic devices based on the absorbers were measured and analyzed by illuminated J-V curve subsequently. The performance of the device constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layer was improved greatly compared to that with In-rich surface layer. Through Raman spectra measurement, it was found that the Raman peak of the A1 mode was shifted for the CuGa-rich one, which is verified that the band gap of the surface layers was elevated. Moreover the value of increased Ga contents within the surface region of films were calculated by the relation between the Raman shifts and the Ga contents. As a result, the devices based on the thin films with the elevated surface energy band by selenizing the precursors with the CuGa-rich surface layer improved further the V(oc) and FF by about 74 mV and 8% respectively compared to that of corresponding to the one with In-rich surface layers, so that the conversion efficiency of the photovoltaic devices based on these thin films with CuGa-rich surface layer was improved by up to 9.4%. Meanwhile Raman scattering spectroscopy has proven to be a very powerful and useful technique for the surface analysis of such thin film solar cell semiconducuor materials.

  5. Self-anti-reflective density-modulated thin films by HIPS technique.

    PubMed

    Keles, Filiz; Badradeen, Emad; Karabacak, Tansel

    2017-08-18

    A critical factor for an efficient light harvesting device is reduced reflectance in order to achieve high optical absorptance. In this regard, refractive index engineering becomes important to minimize reflectance. In this study, a new fabrication approach to obtain density-modulated CuIn x Ga(1-x)Se2 (CIGS) thin films with self-anti-reflective properties has been demonstrated. Density-modulated CIGS samples were fabricated by utilizing high pressure sputtering (HIPS) at Ar gas pressure of 2.75 × 10(-2) mbar along with conventional low pressure sputtering (LPS) at Ar gas pressure of 3.0 × 10(-3) mbar. LPS produces conventional high density thin films while HIPS produces low density thin films with approximate porosities of ∼15% due to a shadowing effect originating from the wide-spread angular atomic of HIPS. Higher pressure conditions lower the film density, which also leads to lower refractive index values. Density-modulated films that incorporate a HIPS layer at the side from which light enters demonstrate lower reflectance thus higher absorptance compared to conventional LPS films, although there is not any significant morphological difference between them. This result can be attributed to the self-anti-reflective property of the density-modulated samples, which was confirmed by the reduced refractive index calculated for HIPS layer via an envelope method. Therefore, HIPS, a simple and scalable approach, can provide enhanced optical absorptance in thin film materials and eliminate the need for conventional light trapping methods such as anti-reflective coatings of different materials or surface texturing.

  6. Absorption of surface acoustic waves by topological insulator thin films

    SciTech Connect

    Li, L. L.; Xu, W.

    2014-08-11

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

  7. Absorption of surface acoustic waves by topological insulator thin films

    NASA Astrophysics Data System (ADS)

    Li, L. L.; Xu, W.

    2014-08-01

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

  8. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

    NASA Astrophysics Data System (ADS)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-01

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for "realistic" surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is - apart from a slight change in surface composition - identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  9. Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Kulkarni, Shashank R.; Chavan, Sanjay S.; Ghongadi, Shantinath R.

    2005-01-01

    Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

  10. Evidence for a modified-stannite crystal structure in wide band gap Cu-poor CuIn1-xGaxSe2: Impact on the optical properties

    NASA Astrophysics Data System (ADS)

    Souilah, M.; Lafond, A.; Barreau, N.; Guillot-Deudon, C.; Kessler, J.

    2008-06-01

    The crystal structure of high Ga-content CuIn1-xGaxSe2 (CIGSe) compounds has been further investigated with the help of single crystal x-ray diffraction technique. It is known that CIGSe compounds adopt the chalcopyrite crystal structure. In the case of Cu-poor, Ga-rich CIGSe, the present study shows that an alternative structure should be considered. This structure is derived from that of stannite in which there is a Ga /In segregation on two different atomic planes. The diffuse reflectance measurements of the Cu-poor compound reveal a slightly different band gap and a smoother transition compared with those of the stoichiometric compound.

  11. Role of the intermediate phases InSe and Cu9(In1- x Ga x )4 in fabricating Cu(In1- x Ga x )Se2 films by selenization of Cu-In-Ga precursors

    NASA Astrophysics Data System (ADS)

    Huang, Yongliang; Han, Anjun; Wang, Xian; Liu, Xiaohui; Liu, Zhengxin; Meng, Fanying

    2017-01-01

    A cosputtered Cu-In-Ga metal precursor was first selenized in H2Se atmosphere, and then subsequently annealed in N2 atmosphere. The microstructural evolution of Cu(In1- x Ga x )Se2 (CIGS) films during thermal treatment was investigated, and it was found that the morphology and Ga distribution of the CIGS absorber were governed by selenization and annealing. The intermediate phases InSe and Cu9(In1- x Ga x )4 formed in the selenization step are beneficial to Ga diffusion and grain growth during annealing. Therefore, the open-circuit voltage and fill factor of a CIGS solar cell were enhanced by the combination of a sufficient amount of intermediate phases and 580 °C annealing, attributed mainly to the higher Ga content near the front surface and better crystallinity of the CIGS absorber. The conversion efficiency of CIGS solar cell was increased 1.24-fold with optimized selenization and annealing conditions.

  12. Highly efficient flexible CuIn0.7Ga0.3Se2 solar cells with a thick Na/Mo layer deposited directly on stainless steel

    NASA Astrophysics Data System (ADS)

    Lee, Myeongho; Lee, Seung Min; Jung, Seungchul; Ahn, Seunggyu; Cho, Jun-Sik; Park, Juhyeong; Eh, Yeongju; Gwak, Jihye; Shin, Keeshik; Yoon, Kyunghoon; Cho, Yong Soo; Yun, Jae Ho

    2015-08-01

    Bi-layered back contact structures consisting of Mo-capping and Na-doped Mo layers have been investigated for the purpose of providing extra Na for CuIn0.7Ga0.3Se2 (CIGS) absorbers for high efficiency solar cells on a stainless steel substrate. This approach utilizing a thick back contact layer does not require a buffer layer on the substrate. The cell performance depends largely on the content of Na in the Mo:Na layer as Na easily diffuses into the absorber layer. The best cell efficiency of 15.04% is obtained for the cell incorporating the 600 nm Mo-capping and 900 nm 10% Na-incorporating Mo layers. This enhancement is attributed mainly due to the substantial increase of Voc as a result of higher carrier concentration and lower leakage current of the extra Na-involved absorber.

  13. Spray-Pyrolyzed Three-Dimensional CuInS2 Solar Cells on Nanocrystalline-Titania Electrodes with Chemical-Bath-Deposited Inx(OH)ySz Buffer Layers

    NASA Astrophysics Data System (ADS)

    Nguyen, Duy-Cuong; Mikami, Yuki; Tsujimoto, Kazuki; Ryo, Toshihiro; Ito, Seigo

    2012-10-01

    Three-dimensional (3D) compound solar cells with the structure of have been fabricated by spray pyrolysis deposition of CuInS2 and chemical-bath deposition of Inx(OH)ySz for the light absorber and buffer layer, respectively. The effect of deposition and annealing conditions of Inx(OH)ySz on the photovoltaic properties of 3D CuInS2 solar cells was investigated. Inx(OH)ySz annealed in air ambient showed a better cell performance than those annealed in nitrogen ambient and without annealing. The improvement of the performance of cells with Inx(OH)ySz buffer layers annealed in air ambient is due to the increase in oxide concentration in the buffer layers [confirmed by X-ray photoelectron spectroscopy (XPS) measurement]. Among cells with Inx(OH)ySz buffer layers deposited for 1, 1.5, 1.75, and 2 h, that with Inx(OH)ySz deposited for 1.75 h showed the best cell performance. The best cell performance was observed for Inx(OH)ySz deposited for 1.75 h with annealing at 300 °C for 30 min in air ambient, and cell parameters were 22 mA cm-2 short-circuit photocurrent density, 0.41 V open-circuit voltage, 0.35 fill factor, and 3.2% conversion efficiency.

  14. Thin Sections

    PubMed Central

    Peachey, Lee D.

    1958-01-01

    Knowledge of the thickness of sections is important for proper interpretation of electron micrographs. Therefore, the thicknesses of sections of n-butyl methacrylate polymer were determined by ellipsometry, and correlated with the color shown in reflected light. The results are: gray, thinner than 60 mµ; silver, 60 to 90 mµ; gold, 90 to 150 mµ; purple, 150 to 190 mµ; blue, 190 to 240 mµ; green, 240 to 280 mµ; and yellow, 280 to 320 mµ. These results agree well with optical theory and with previous published data for thin films. Sections, after cutting, are 30 to 40 per cent shorter than the face of the block from which they were cut. Only a small improvement results from allowing the sections to remain in the collecting trough at room temperature. Heating above room temperature, however, reduces this shortening, with a corresponding improvement in dimensions and spatial relationships in the sections. When the thickness of the section is considered in interpreting electron micrographs instead of considering the section to be two-dimensional, a more accurate interpretation is possible. The consideration of electron micrographs as arising from projections of many profiles from throughout the whole thickness of the section explains the apparent lack of continuity often observed in serial sections. It is believed that serial sections are actually continuous, but that the change in size of structure through the thickness of one section and the consideration of only the largest profile shown in the micrograph can account for the lack of continuity previously observed. PMID:13549493

  15. Evidence for Cu2-xSe platelets at grain boundaries and within grains in Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Simsek Sanli, E.; Ramasse, Q. M.; Mainz, R.; Weber, A.; Abou-Ras, D.; Sigle, W.; van Aken, P. A.

    2017-07-01

    Cu(In,Ga)Se2 (CIGS)-based solar cells reach high power-conversion efficiencies of above 22%. In this work, a three-stage co-evaporation method was used for their fabrication. During the growth stages, the stoichiometry of the absorbers changes from Cu-poor ([Cu]/([In] + [Ga]) < 1) to Cu-rich ([Cu]/([In] + [Ga]) > 1) and finally becomes Cu-poor again when the growth process is completed. It is known that, according to the Cu-In-Ga-Se phase diagram, a Cu-rich growth leads to the presence of Cu2-xSe (x = 0-0.25), which is assumed to assist in recrystallization, grain growth, and defect annihilation in the CIGS layer. So far, Cu2-xSe precipitates with spatial extensions on the order of 10-100 nm have been detected only in Cu-rich CIGS layers. In the present work, we report Cu2-xSe platelets with widths of only a few atomic planes at grain boundaries and as inclusions within grains in a polycrystalline, Cu-poor CIGS layer, as evidenced by high-resolution scanning transmission electron microscopy (STEM). The chemistry of the Cu-Se secondary phase was analyzed by electron energy-loss spectroscopy, and STEM image simulation confirmed the identification of the detected phase. These results represent additional experimental evidence for the proposed topotactical growth model for Cu-Se-assisted CIGS thin-film formation under Cu-rich conditions.

  16. Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

    NASA Astrophysics Data System (ADS)

    Varley, J. B.; Lordi, V.; He, X.; Rockett, A.

    2017-07-01

    To compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In ,Ga )Se 2 (CIGSe), and Cu2ZnSn(S ,Se ) 4 (CZTSSe), improving the n -type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdS or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.

  17. CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005

    SciTech Connect

    Dhere, N. G.

    2006-02-01

    This report describes the I-III-VI2 compounds that are developing into a promising material to meet the energy requirement of the world. CuInSe2 (CIS) and its alloy with Ga and S have shown long-term stability and highest conversion efficiency of 19.5%. Among the various ways of preparing CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells, co-evaporation and sputtering techniques are the most promising. Sputtering is an established process for very high-throughput manufacturing. ARCO Solar, now Shell Solar, pioneered the work in CIS using the sputtering technique. The two-stage process developed by ARCO Solar involved sputtering of a copper and indium layer on molybdenum-coated glass as the first step. In the second step, the copper-indium layers were exposed to a selenium-bearing gas such as hydrogen selenide (H2Se) mixed with argon. The hydrogen selenide breaks down and leaves selenium, which reacts and mixes with the copper and indium in such a way to produce very high-quality CIS absorber layer. Sputtering technology has the added advantage of being easily scaled up and promotes roll-to-roll production on flexible substrates. Preliminary experiments were carried out. ZnO/ZnO:Al deposition by RF magnetron sputtering and CdS deposition by chemical-bath deposition are being carried out on a routine basis.

  18. [Preparation of large area Al-ZnO thin film by DC magnetron sputtering].

    PubMed

    Jiao, Fei; Liao, Cheng; Han, Jun-Feng; Zhou, Zhen

    2009-03-01

    Solar cells of p-CIS/n-buffer/ZnO type, where CIS is (CuInS2, CuInSe2 or intermediates, are thin-film-based devices for the future high-efficiency and low-cost photovoltaic devices. As important thin film, the properties of Al-doped ZnO (AZO) directly affect the parameter of the cell, especially for large volume. In the present paper, AZO semiconductor transparent thin film on soda-lime glass was fabricated using cylindrical zinc-aluminum target, which can not only lower the cost of the target but also make the preparation of large area AZO thin film more easily. Using the DC magnet sputtering techniques and rolling target, high utilization efficiency of target was achieved and large area uniform and directional film was realized. An introduction to DC magnet sputtering techniques for large area film fabrication is given. With different measurement methods, such as X-ray diffraction (XRD) and scan electron microscope (SEM), we analyzed large size film's structure, appearance, and electrical and optical characteristics. The XRD spectrum indicated that the AZO film shows well zinc-blende structure with a preferred (002) growth and the c-axis is oriented normal to the substrate plane. The lattice constant is 5.603 9 nm and the mismatch with CdS thin film is only 2 percent. It absolutely satisfied the demand of the GIGS solar cell. The cross-section of the AZO thin film indicates the columnar structure and the surface morphology shows that the crystal size is about 50 nm that is consistent with the result of XRD spectrum. By the optical transmission curve, not only the high transmission rate over 85 percent in the visible spectrum between 400 nm and 700 nm was showed but also the band gap 3.1 eV was estimated. And all these parameters can meet the demand of the large area module of GIGS solar cell. The result is that using alloy target and Ar gas, and controlling the appropriate pressure of oxygen, we can get directional, condensed, uniform, high transmitting rate, low

  19. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  20. Research on polycrystalline thin-film CuGaInSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Stanbery, B. J.; Chen, W. S.; Devaney, W. E.; Stewart, J. W.

    1992-11-01

    This report describes research to fabricate high-efficiency CdZnS/CuInGaSe2 (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13 percent efficient, 1-sq cm total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO / Cd(0.82)Zn(0.18)S / CuIn(0.80)Ga(0.20)Se2 cell that was verified at NREL under standard testing conditions at 13.1 percent efficiency with V(sub oc) = 0.581 V, J(sub sc) = 34.8 mA/sq cm, FF = 0.728, and a cell area of 0.979 sq cm.

  1. Sustainable, Rapid Synthesis of Bright-Luminescent CuInS2-ZnS Alloyed Nanocrystals: Multistage Nano-xenotoxicity Assessment and Intravital Fluorescence Bioimaging in Zebrafish-Embryos

    NASA Astrophysics Data System (ADS)

    Chetty, S. Shashank; Praneetha, S.; Basu, Sandeep; Sachidanandan, Chetana; Murugan, A. Vadivel

    2016-05-01

    Near-infrared (NIR) luminescent CuInS2-ZnS alloyed nanocrystals (CIZS-NCs) for highly fluorescence bioimaging have received considerable interest in recent years. Owing, they became a desirable alternative to heavy-metal based-NCs and organic dyes with unique optical properties and low-toxicity for bioimaging and optoelectronic applications. In the present study, bright and robust CIZS-NCs have been synthesized within 5 min, as-high-as 230 °C without requiring any inert-gas atmosphere via microwave-solvothermal (MW-ST) method. Subsequently, the in vitro and in vivo nano-xenotoxicity and cellular uptake of the MUA-functionalized CIZS-NCs were investigated in L929, Vero, MCF7 cell lines and zebrafish-embryos. We observed minimal toxicity and acute teratogenic consequences upto 62.5 μg/ml of the CIZS-NCs in zebrafish-embryos. We also observed spontaneous uptake of the MUA-functionalized CIZS-NCs by 3 dpf older zebrafish-embryos that are evident through bright red fluorescence-emission at a low concentration of 7.8 μg/mL. Hence, we propose that the rapid, low-cost, large-scale “sustainable” MW-ST synthesis of CIZS-NCs, is an ideal bio-nanoprobe with good temporal and spatial resolution for rapid labeling, long-term in vivo tracking and intravital-fluorescence-bioimaging (IVBI).

  2. Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

    NASA Astrophysics Data System (ADS)

    Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

    2013-10-01

    In the present manuscript we report about the preparation of CdS/CuInSe2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au9+ SHI of 5×1011 and 5×1012 ions/cm2 fluencies and later on characterized for structural, compositional, morphological, optical and I-V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In2Se3, Cu3Se2 and CuIn2Se3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I-V characteristics under illumination to 100 mW/cm2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation.

  3. Influence of selenization temperature on the properties of CuInSe2 thin films prepared by spin coating technique

    NASA Astrophysics Data System (ADS)

    Merdes, S.; Bechiri, L.; Hadjoub, Z.; Sano, M.; Ando, S.

    2006-09-01

    CuInSe2 (CIS) polycrystalline thin films have been prepared using the spin coating technique by thermal decomposition in N2+H2 (10%) gas of Cu-In Naphthenates and subsequent selenization in vacuum sealed ampoules of the obtained precursors with Se vapor. This technique which requires low vacuum process and low cost processing equipment is suitable for obtaining large area films and mass production. In this paper we report on the influence of selenization temperature on the growth process. Thus, samples have been prepared with different precursor compositions and selenized at various temperatures. A post-growth annealing has also been carried out. Crystal growth was followed versus the different selenization temperatures until the formation of CuInSe2 phase. Structure, crystal orientation and morphology of the obtained experimental films were studied by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM). Polycrystalline films with a single (112) mainly oriented chalcopyrite phase have been obtained.

  4. Thinning sprout clumps

    Treesearch

    Richard M. Godman

    1992-01-01

    How do you deal with stump sprouts in second-growth hardwood stands? Although thinning them takes special effort to avoid causing decay, stump sprouts are the only way to regenerate certain species such as basswood. Generally, you should thin them early and preferably when potential crop stems are 3 inches d.b.h. or less. But if you delay thinning until they are pole-...

  5. Thin film interference of colloidal thin films.

    PubMed

    Cong, Hailin; Cao, Weixiao

    2004-09-14

    A stairlike colloidal crystal thin film composed of poly(styrene-methyl methacrylate-acrylic acid) (P(St-MMA-AA)) monodispersed colloids was fabricated on an inclined silicon substrate. Different bright colors were observed on the various parts of the film with different layers as white light irradiated perpendicularly on it. The relationship between the colors and layers of the film was investigated and discussed according to the principle of thin film interference. On the basis of the phenomenon of thin film interference, a one-layer colloidal film having uniform color was researched and it would display diverse colors before and after swollen by styrene (St). A circular stairlike colloidal film was achieved to mimic the colors of the peacock tail feather.

  6. Optical thin film devices

    NASA Astrophysics Data System (ADS)

    Mao, Shuzheng

    1991-11-01

    Thin film devices are applied to almost all modern scientific instruments, and these devices, especially optical thin film devices, play an essential role in the performances of the instruments, therefore, they are attracting more and more attention. Now there are numerous kinds of thin film devices and their applications are very diversified. The 300-page book, 'Thin Film Device and Applications,' by Prof. K. L. Chopra gives some general ideas, and my paper also outlines the designs, fabrication, and applications of some optical thin film devices made in my laboratory. Optical thin film devices have been greatly developed in the recent decades. Prof. A. Thelan has given a number of papers on the theory and techniques, Prof. H. A. Macleod's book, 'Thin Film Optical Filters,' has concisely concluded the important concepts of optical thin film devices, and Prof. J. A. Dobrowobski has proposed many successful designs for optical thin film devices. Recently, fully-automatic plants make it easier to produce thin film devices with various spectrum requirements, and some companies, such as Balzers, Leybold AG, Satis Vacuum AG, etc., have manufactured such kinds of coating plants for research or mass-production, and the successful example is the production of multilayer antireflection coatings with high stability and reproducibility. Therefore, it could be said that the design of optical thin film devices and coating plants is quite mature. However, we cannot expect that every problem has been solved, the R&D work still continues, the competition still continues, and new design concepts, new techniques, and new film materials are continually developed. Meanwhile, the high-price of fully-automatic coating plants makes unpopular, and automatic design of coating stacks is only the technique for optimizing the manual design according to the physical concepts and experience, in addition, not only the optical system, but also working environment should be taken into account when

  7. Sustainable, Rapid Synthesis of Bright-Luminescent CuInS2-ZnS Alloyed Nanocrystals: Multistage Nano-xenotoxicity Assessment and Intravital Fluorescence Bioimaging in Zebrafish-Embryos

    PubMed Central

    Chetty, S. Shashank; Praneetha, S.; Basu, Sandeep; Sachidanandan, Chetana; Murugan, A. Vadivel

    2016-01-01

    Near-infrared (NIR) luminescent CuInS2-ZnS alloyed nanocrystals (CIZS-NCs) for highly fluorescence bioimaging have received considerable interest in recent years. Owing, they became a desirable alternative to heavy-metal based-NCs and organic dyes with unique optical properties and low-toxicity for bioimaging and optoelectronic applications. In the present study, bright and robust CIZS-NCs have been synthesized within 5 min, as-high-as 230 °C without requiring any inert-gas atmosphere via microwave-solvothermal (MW-ST) method. Subsequently, the in vitro and in vivo nano-xenotoxicity and cellular uptake of the MUA-functionalized CIZS-NCs were investigated in L929, Vero, MCF7 cell lines and zebrafish-embryos. We observed minimal toxicity and acute teratogenic consequences upto 62.5 μg/ml of the CIZS-NCs in zebrafish-embryos. We also observed spontaneous uptake of the MUA-functionalized CIZS-NCs by 3 dpf older zebrafish-embryos that are evident through bright red fluorescence-emission at a low concentration of 7.8 μg/mL. Hence, we propose that the rapid, low-cost, large-scale “sustainable” MW-ST synthesis of CIZS-NCs, is an ideal bio-nanoprobe with good temporal and spatial resolution for rapid labeling, long-term in vivo tracking and intravital-fluorescence-bioimaging (IVBI). PMID:27188464

  8. Electrochemical thinning of silicon

    DOEpatents

    Medernach, John W.

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  9. Electrochemical thinning of silicon

    DOEpatents

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  10. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  11. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  12. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  13. Thinning sprout clumps

    Treesearch

    Robert Rogers; Paul S. Johnson

    1989-01-01

    Only stump sprouts originating in clearcuts or extremely heavily thinned stands have significant potential for developing into good trees. Stump sprouts can account for as many as half the stems after a clearcut of central hardwoods.

  14. Line Thinning Algorithm

    NASA Astrophysics Data System (ADS)

    Feigin, G.; Ben-Yosef, N.

    1983-10-01

    A thinning algorithm, of the banana-peel type, is presented. In each iteration pixels are attacked from all directions (there are no sub-iterations), and the deletion criteria depend on the 24 nearest neighbours.

  15. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  16. Super Thin Ceramic Coatings

    NASA Image and Video Library

    New technology being developed at NASA's Glenn Research Center creates super thin ceramic coatings on engine components. The Plasma Spray – Physical Vapor Deposition (PS-PVD) rig uses a powerful ...

  17. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  18. Thin film tritium dosimetry

    DOEpatents

    Moran, Paul R.

    1976-01-01

    The present invention provides a method for tritium dosimetry. A dosimeter comprising a thin film of a material having relatively sensitive RITAC-RITAP dosimetry properties is exposed to radiation from tritium, and after the dosimeter has been removed from the source of the radiation, the low energy electron dose deposited in the thin film is determined by radiation-induced, thermally-activated polarization dosimetry techniques.

  19. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  20. Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry

    NASA Astrophysics Data System (ADS)

    Li, Jian; Stoke, Jason A.; Podraza, Nikolas J.; Sainju, Deepak; Parikh, Anuja; Cao, Xinmin; Khatri, Himal; Barreau, Nicolas; Marsillac, Sylvain; Deng, Xunming; Collins, Robert W.

    2007-09-01

    Methods of spectroscopic ellipsometry (SE) have been applied to investigate the growth and properties of the material components used in the three major thin film photovoltaics technologies: (1) hydrogenated silicon (Si:H); (2) cadmium telluride (CdTe); and (3) copper indium-gallium diselenide (CuIn 1-xGa xSe2 or CIGS). In Si:H technology, real time SE (RTSE) has been applied to establish deposition phase diagrams that describe very high frequency (vhf) plasmaenhanced chemical vapor deposition (PECVD) processes for hydrogenated silicon (Si:H) and silicon-germanium alloy (Si 1-xGe x:H) thin films. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si 1-xGe x:H component solar cells of multijunction devices are obtained when the i-layers are prepared under maximal H II dilution conditions. In CdTe technology, the magnetron sputter deposition of polycrystalline CdTe, CdS, and CdTe 1-xS x thin films as well as the formation of CdS/CdTe and CdTe/CdS heterojunctions has been studied. The nucleation and growth behaviors of CdTe and CdS show strong variations with deposition temperature, and this influences the ultimate grain size. The dielectric functions ɛ of the CdTe 1-xS x alloys have been deduced in order to set up a database for real time investigation of inter-diffusion at the CdS/CdTe and CdTe/CdS interfaces. In CIGS technology, strong variations in ɛ of the Mo back contact during sputter deposition have been observed, and these results have been understood applying a Drude relaxation time that varies with the Mo film thickness. Ex-situ SE measurements of a novel In IIS 3 window layer have shown critical point structures at 2.77+/-0.08 eV, 4.92+/-0.005 eV, and 5.64+/-0.005 eV, as well as an absorption tail with an onset near 1.9 eV. Simulations of solar cell performance comparing In IIS 3 and the conventional CdS have revealed similar quantum efficiencies, suggesting the possibility of a Cd-free window layer in CIGS technology.

  1. Growth and optoelectronic characteristic of n-Si/p-CuIn(S 1-xSe x) 2 thin-film solar cell by solution growth technique

    NASA Astrophysics Data System (ADS)

    Chavhan, S.; Sharma, R.

    2006-07-01

    The p-CuIn(S 1-xSe x) 2 (CISS) thin films have been grown on n-Si substrate by solution growth technique. The deposition parameters, such as pH (10.5), deposition time (60 min), deposition temperature (50 °C), and concentration of bath solution (0.1 M) were optimized. Elemental analysis of the p-CuIn(S 1-xSe x) 2 thin film was confirmed by energy-dispersive analysis of X-ray (EDAX). The SEM study of absorber layer shows the uniform morphology of film as well as the continuous smooth deposition onto the n-Si substrates, whose grain size is 130 nm. CuIn(S 1-xSe x) 2 ( x=0.5) reveals (1 1 2) orientation peak and exhibits the chalcopyrite structure with lattice constant a=5.28 Å and c=11.45 Å. The J- V characteristics were measured in dark and light. The device parameters have been calculated for solar cell fabrication, V=411.09 mV, and J=14.55 mA. FF=46.55% and η=4.64% under an illumination of 60 mW/cm 2. The J- V characteristics of the device under dark condition were also studied and the ideality factor was calculated, which is equal to 2.2 for n-Si/p-CuIn(S 0.5Se 0.5) 2 heterojunction thin film.

  2. The effect of surface roughness on the determination of optical constants of CuInSe2 and CuGaSe2 thin films

    NASA Astrophysics Data System (ADS)

    Yin, G.; Merschjann, C.; Schmid, M.

    2013-06-01

    To investigate the effect of surface roughness on the calculation of optical constants, e.g., the complex refractive index n +ik or (n ,k) of CuIn1-xGaxSe2 (CIGSe) thin films, we took CuInSe2 (CISe) and CuGaSe2 (CGSe) as examples and applied the "Modified Transfer-Matrix (MTM)" method to calculate optical constants with considering the effect of scattering due to surface roughness. Compared to the Transfer-Matrix (TM) method without considering surface roughness, it was revealed that the MTM method could improve the accuracy of calculation. The calculated refractive index values from the MTM method increase by 6.89% for CISe and 2.59% for CGSe in contrast to those from the TM method. In addition, bromine solution was confirmed via Scanning Electron Microscopy and Atomic Force Microscopy to be able to reduce the surface roughness. Calculated results from smoothened samples showed that the accuracy of calculated optical constants was further improved. Finally, optical constants calculated by the MTM method were compared to those from smoothened samples, validating that the MTM method could eliminate the influence of surface roughness on the calculation of optical constants more effectively for CGSe with low surface roughness than for CISe with high surface roughness.

  3. Structural analysis of In/Ag, In/Cu and In/Pd thin films on tungsten by ellipsometric, XRD and AES methods

    NASA Astrophysics Data System (ADS)

    Wronkowska, A. A.; Wronkowski, A.; Bukaluk, A.; Trzcinski, M.; Okulewicz, K.; Skowroński, Ł.

    2008-05-01

    Compositional, microstructural and optical properties of In/Cu, In/Ag and In/Pd thin films evaporated on W substrate in a vacuum were investigated by means of Auger electron spectroscopy, X-ray diffractometry, scanning electron microscopy, and spectroscopic ellipsometry methods. Thicknesses of deposited pure metal layers were adjusted to atomic concentration ratios In:Ag = 1:2, In:Cu = 2:1 and In:Pd = 3:1. Interdiffusion of metals and creation of intermetallic compounds AgIn 2, Ag 2In and CuIn 2were detected at room temperature. Phase transformation and changes in the surface morphology due to annealing of samples at 393 K for 60 min were revealed. Combined investigations indicated a layered structure of In/Ag films. A tendency of island-like structure formation was stronger for In/Cu and In/Pd films. The complex dielectric functions <ɛ˜(E)>=<ɛ1(E)>+i<ɛ2(E)> of In/Ag, In/Cu and In/Pd composite layers were determined from spectroellipsometric data.

  4. Epitaxial thinning process

    NASA Technical Reports Server (NTRS)

    Siegel, C. M. (Inventor)

    1984-01-01

    A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

  5. Lithospheric and crustal thinning

    NASA Technical Reports Server (NTRS)

    Moretti, I.

    1985-01-01

    In rift zones, both the crust and the lithosphere get thinner. The amplitude and the mechanism of these two thinning situations are different. The lithospheric thinning is a thermal phenomenon produced by an asthenospherical uprising under the rift zone. In some regions its amplitude can exceed 200%. This is observed under the Baikal rift where the crust is directly underlaid by the mantellic asthenosphere. The presence of hot material under rift zones induces a large negative gravity anomaly. A low seismic velocity zone linked to this thermal anomaly is also observed. During the rifting, the magmatic chambers get progressively closer from the ground surface. Simultaneously, the Moho reflector is found at shallow depth under rift zones. This crustal thinning does not exceed 50%. Tectonic stresses and vertical movements result from the two competing effects of the lithospheric and crustal thinning. On the one hand, the deep thermal anomaly induces a large doming and is associated with extensive deviatoric stresses. On the other hand, the crustal thinning involves the formation of a central valley. This subsidence is increased by the sediment loading. The purpose here is to quantify these two phenomena in order to explain the morphological and thermal evolution of rift zones.

  6. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  7. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  8. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  9. Thin film photovoltaic device

    DOEpatents

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  10. Thin film resonator technology.

    PubMed

    Lakin, Kenneth M

    2005-05-01

    Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

  11. Biomimetic thin film deposition

    NASA Astrophysics Data System (ADS)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  12. Shear Thinning in Xenon

    NASA Technical Reports Server (NTRS)

    Bergm Robert F.; Moldover, Michael R.; Yao, Minwu; Zimmerli, Gregory A.

    2009-01-01

    We measured shear thinning, a viscosity decrease ordinarily associated with complex liquids such as molten plastics or ketchup, near the critical point of xenon. The data span a wide range of dimensionless shear rate: the product of the shear rate and the relaxation time of critical fluctuations was greater than 0.001 and was less than 700. As predicted by theory, shear thinning occurred when this product was greater than 1. The measurements were conducted aboard the Space Shuttle Columbia to avoid the density stratification caused by Earth's gravity.

  13. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  14. Thin Wall Iron Castings

    SciTech Connect

    J.F. Cuttino; D.M. Stefanescu; T.S. Piwonka

    2001-10-31

    Results of an investigation made to develop methods of making iron castings having wall thicknesses as small as 2.5 mm in green sand molds are presented. It was found that thin wall ductile and compacted graphite iron castings can be made and have properties consistent with heavier castings. Green sand molding variables that affect casting dimensions were also identified.

  15. Thin Lens Ray Tracing.

    ERIC Educational Resources Information Center

    Gatland, Ian R.

    2002-01-01

    Proposes a ray tracing approach to thin lens analysis based on a vector form of Snell's law for paraxial rays as an alternative to the usual approach in introductory physics courses. The ray tracing approach accommodates skew rays and thus provides a complete analysis. (Author/KHR)

  16. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  17. Protein thin film machines.

    PubMed

    Federici, Stefania; Oliviero, Giulio; Hamad-Schifferli, Kimberly; Bergese, Paolo

    2010-12-01

    We report the first example of microcantilever beams that are reversibly driven by protein thin film machines fueled by cycling the salt concentration of the surrounding solution. We also show that upon the same salinity stimulus the drive can be completely reversed in its direction by introducing a surface coating ligand. Experimental results are throughout discussed within a general yet simple thermodynamic model.

  18. Treading on Thin Water.

    ERIC Educational Resources Information Center

    Haley, Richard D.

    1985-01-01

    Provides a simple introduction to animals whose habitat is the thin surface film of water. Describes adaptive mechanisms of water striders, whirlygigs and riffle bugs and suggests ways to observe them in the wild or as aquarium animals. Includes basic demonstrations of the nature of surface tension. (JHZ)

  19. Implementing optimal thinning strategies

    Treesearch

    Kurt H. Riitters; J. Douglas Brodie

    1984-01-01

    Optimal thinning regimes for achieving several management objectives were derived from two stand-growth simulators by dynamic programming. Residual mean tree volumes were then plotted against stand density management diagrams. The results supported the use of density management diagrams for comparing, checking, and implementing the results of optimization analyses....

  20. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  1. Treading on Thin Water.

    ERIC Educational Resources Information Center

    Haley, Richard D.

    1985-01-01

    Provides a simple introduction to animals whose habitat is the thin surface film of water. Describes adaptive mechanisms of water striders, whirlygigs and riffle bugs and suggests ways to observe them in the wild or as aquarium animals. Includes basic demonstrations of the nature of surface tension. (JHZ)

  2. Thin Lens Ray Tracing.

    ERIC Educational Resources Information Center

    Gatland, Ian R.

    2002-01-01

    Proposes a ray tracing approach to thin lens analysis based on a vector form of Snell's law for paraxial rays as an alternative to the usual approach in introductory physics courses. The ray tracing approach accommodates skew rays and thus provides a complete analysis. (Author/KHR)

  3. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  4. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  5. Modern Thin-Layer Chromatography.

    ERIC Educational Resources Information Center

    Poole, Colin F.; Poole, Salwa K.

    1989-01-01

    Some of the important modern developments of thin-layer chromatography are introduced. Discussed are the theory and instrumentation of thin-layer chromatography including multidimensional and multimodal techniques. Lists 53 references. (CW)

  6. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  7. VACUUM DEPOSITION OF THIN FILMS,

    DTIC Science & Technology

    The book deals with methods of obtaining and processing thin films , methods of measuring the deposition rate and thickness of thin-film layers, and...the main fields of application of thin films . Vacuum requirements and the requirements for the composition of the residual medium in thermal...evaporation and cathode sputtering are given, and modern methods of producing and measuring vacuums and the equipment used in obtaining thin films are described. (Author)

  8. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  9. Copper gallium diselenide thin film absorber growth for solar cell device fabrication

    NASA Astrophysics Data System (ADS)

    Kaczynski, Ryan

    2007-12-01

    A custom-built migration-enhanced epitaxy reactor originally optimized for CuInSe2 (CIS) deposition was modified to grow gallium-containing compound semiconductor thin films, such as CuGaSe2 (CGS) and CuIn1-xGaxSe2 (CIGS). The addition of gallium allows for the manufacturing of solar cell absorber layers with wider band gaps. Three distinct growth recipes under several growth temperatures and a wide range of metal-composition ratios are used to deposit polycrystalline CGS thin films. The surface morphology of gallium-rich films is typically very uniform, with long needle-like grains when grown by the first recipe, a constant copper-rate process. In contrast, copper-rich films grown by this same recipe or by a modified three-stage process have island structures with very large grains embedded in a matrix region that possesses small grains. The surface morphology becomes more uniform and the grains in the matrix region become larger when a higher growth temperature is used. The third recipe, an emulated three-stage process, does not produce films with an island-matrix structure, and the grains are uniformly large. The highest conversion efficiency achieved for solar cells based on CGS is 5.3%, delivered by a copper-rich absorber deposited at the highest sustainable growth temperature of 491°C. This device has a large fill factor of 66%, but the open-circuit voltage of 0.48 V is lower than what is expected from a wide band-gap absorber. A set of CIGS solar cells was completely fabricated and characterized in-house. This led to the most efficient device produced from an absorber grown in our reactor, in the form of a 9% CIS solar cell featuring a one-micron film deposited at 491°C. Finally, a dynamic reactor model was created to describe the deposition environment in our epitaxial reactor. All relevant physical features are incorporated, including the cyclic motion of a rotating platen and the spatial distribution of the flux produced by three metal effusion sources

  10. CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Ghongadi, Shantinath R.; Pandit, Mandar B.; Jahagirdar, Anant H.; Scheiman, David

    2002-01-01

    CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal

  11. Investigation of bulk hybrid heterojunction solar cells based on Cu(In,Ga)Se2 nanocrystals

    PubMed Central

    2013-01-01

    This work presents the systematic studies of bulk hybrid heterojunction solar cells based on Cu(In, Ga)Se2 (CIGS) nanocrystals (NCs) embedded in poly(3-hexylthiophene) matrix. The CIGS NCs of approximately 17 nm in diameter were homogeneously blended with P3HT layer to form an active layer of a photovoltaic device. The blend ratios of CIGS NCs to P3HT, solvent effects on thin film morphologies, interface between P3HT/CIGS NCs and post-production annealing of devices were investigated, and the best performance of photovoltaic devices was measured under AM 1.5 simulated solar illumination (100 mW/cm2). PMID:23870036

  12. Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

    SciTech Connect

    Jiang, Chun-Sheng; To, Bobby; Glynn, Stephen; Mahabaduge, Hasitha; Barnes, Teresa; Al-Jassim, Mowafak M.

    2016-11-21

    We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ~0.5 degrees. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

  13. [Spectral emissivity of thin films].

    PubMed

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  14. Shear-thinning Fluid

    NASA Technical Reports Server (NTRS)

    2001-01-01

    Whipped cream and the filling for pumpkin pie are two familiar materials that exhibit the shear-thinning effect seen in a range of industrial applications. It is thick enough to stand on its own atop a piece of pie, yet flows readily when pushed through a tube. This demonstrates the shear-thinning effect that was studied with the Critical Viscosity of Xenon Experiment (CVX-2) on the STS-107 Research 1 mission in 2002. CVX observed the behavior of xenon, a heavy inert gas used in flash lamps and ion rocket engines, at its critical point. The principal investigator was Dr. Robert Berg of the National Institutes of Standards and Technology in Gaithersburg, MD.

  15. Shear-thinning Fluid

    NASA Technical Reports Server (NTRS)

    2001-01-01

    Whipped cream and the filling for pumpkin pie are two familiar materials that exhibit the shear-thinning effect seen in a range of industrial applications. It is thick enough to stand on its own atop a piece of pie, yet flows readily when pushed through a tube. This demonstrates the shear-thinning effect that was studied with the Critical Viscosity of Xenon Experiment (CVX-2) on the STS-107 Research 1 mission in 2002. CVX observed the behavior of xenon, a heavy inert gas used in flash lamps and ion rocket engines, at its critical point. The principal investigator was Dr. Robert Berg of the National Institutes of Standards and Technology in Gaithersburg, MD.

  16. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  17. Mechanics of Thin Films

    DTIC Science & Technology

    1992-02-06

    32 (1991). INTRODUCTION Many technological areas currently use designs that rely on thin films for a variety of effects that include mechanical...film thickness, d is the width of the columnar grains, and Q is the atomic volume. The current film thickness h0 increases in proportion to the film...temperature and on the level of the far field uniform stress (121. h careful examination of these assumptions is currently under way. This work has

  18. Microstructure of Thin Films

    DTIC Science & Technology

    1990-02-07

    study of Ion Assisted deposition (IAD) with different materials: metals , Al, Ag, and dielectrics, nitrides, fluorides and oxides. Some additional...optical thin films. The materials studied by ion -assisted deposition has ranged over metals , especially silver and aluminum, and dielectrics, especially... Ion -assisted deposition of metals It was of interest to us to determine if the great benefits of io-assisted deposition in the fabrication of

  19. Thin, Lightweight Solar Cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  20. Thin film composite electrolyte

    DOEpatents

    Schucker, Robert C.

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  1. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  2. Ultra-Thin, Flexible Electronics

    NASA Technical Reports Server (NTRS)

    Holland, Brian; McPherson, Ryan; Zhang, Tan; Hou, Zhenwei; Dean, Robert; Johnson, R. Wayne; DelCastillo, Linda; Moussessian, Alina

    2008-01-01

    Thinned die can be used to realize ultra-thin flexible electronics for applications such as conformal and wearable electronics. Three techniques have been developed to achieve this goal using thinned die: die flip chip bonded onto flexible substrates, die laminated onto LCP films, and die embedded in polyimide. A key to achieving each of these techniques is the thinning of die to a thickness of 50 microns or thinner. Conventional CMP processing can be used to thin to 50 microns. At 50 microns, the active die become flexible and must be handled by temporarily bonding them to a holder die, for further processing. Once bonded face down to the holder die, the active die can be further thinned by DRIE etching the exposed backside. The thinned die can then been packaged in or on the flexible substrate.

  3. Thin film scintillators

    NASA Astrophysics Data System (ADS)

    McDonald, Warren; McKinney, George; Tzolov, Marian

    2015-03-01

    Scintillating materials convert energy flux (particles or electromagnetic waves) into light with spectral characteristic matching a subsequent light detector. Commercial scintillators such as yttrium aluminum garnet (YAG) and yttrium aluminum perovskite (YAP) are commonly used. These are inefficient at lower energies due to the conductive coating present on their top surface, which is needed to avoid charging. We hypothesize that nano-structured thin film scintillators will outperform the commercial scintillators at low electron energies. We have developed alternative thin film scintillators, zinc tungstate and zinc oxide, which show promise for higher sensitivity to lower energy electrons since they are inherently conductive. Zinc tungstate films exhibit photoluminescence quantum efficiency of 74%. Cathodoluminescence spectroscopy was applied in transmission and reflection geometries. The comparison between the thin films and the YAG and YAP commercial scintillators shows much higher light output from the zinc tungstate and zinc oxide at electron energies less than 5 keV. Our films were integrated in a backscattered electron detector. This detector delivers better images than an identical detector with commercial YAG scintillator at low electron energies. Dr. Nicholas Barbi from PulseTor LLC, Dr. Anura Goonewardene, NSF Grants: #0806660, #1058829, #0923047.

  4. Thin Film Optical Coatings

    NASA Astrophysics Data System (ADS)

    Ristau, Detlev; Ehlers, Henrik

    Within the scientific conception of the modern world, thin film optical coatings can be interpreted as one-dimensional photonic crystals. In general, they are composed of a sequence of single layers which consist of different transparent dielectrics with a thickness in the nanometer scale according to the operation wavelength range. The major function of these photonic structures is to adapt the properties of an optical surface to the needs of specific applications. By application of optical thin film coatings with optimized designs, the spectral characteristics of a surface can be modified to practically any required transfer function for a certain wavelength range. For example, the Fresnel reflection of a lens or a laser window can be suppressed for a broad wavelength range by depositing an antireflective coating containing only a few single layers. On the basis of a layer stack with alternating high- and low-refracting materials, high reflectance values up to 99.999% can be achieved for a certain laser wavelength. In addition to these basic functions, optical coatings can realize a broad variety of spectral filter characteristics according to even extremely sophisticated demands in modern precision optics and laser technology. Moreover, recent developments in optical thin film technology provide the means to combine selected optical properties with other features concerning, for instance, the thermal, mechanical or chemical stability of a surface. The latest progress in ophthalmic coatings even includes the integration of self-cleaning, photoactive or anti-fogging functions in antireflective coatings on glass.

  5. Ureilite Thin Section Preparation

    NASA Technical Reports Server (NTRS)

    Harrington, R.; Righter, K.

    2014-01-01

    Preparing thin and thick sections of ureilite type meteorites is a challenge that can confound even the most experienced section preparer. A common characteristic of these samples is the presence of carbon phases, particularly nanodiamonds, in the matrix along silicate grain boundaries, fractures, and cleavage plains [1]. The extreme hardness of the nanodiamonds presents a challenge to the section preparer in the form of high surface relief on the section. This hard material also causes considerable wear and tear on equipment and materials that are used for making the sections. These issues will be discussed and potentially helpful measures will be presented.

  6. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  7. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  8. Method for thinning specimen

    DOEpatents

    Follstaedt, David M.; Moran, Michael P.

    2005-03-15

    A method for thinning (such as in grinding and polishing) a material surface using an instrument means for moving an article with a discontinuous surface with an abrasive material dispersed between the material surface and the discontinuous surface where the discontinuous surface of the moving article provides an efficient means for maintaining contact of the abrasive with the material surface. When used to dimple specimens for microscopy analysis, a wheel with a surface that has been modified to produce a uniform or random discontinuous surface significantly improves the speed of the dimpling process without loss of quality of finish.

  9. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  10. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  11. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  12. The thin eggshell problem

    USGS Publications Warehouse

    Stickel, L.F.; Rhodes, L.I.; Gillett, J.W.

    1970-01-01

    It has long been known that DDT and related chemicals can impair the reproduction of birds. In early years of organochlorine pesticide use, widespread mortality occurred immediately following heavy applications of these chemicals, and survivors contained substantial amounts of toxicant in their tissues. Repopulation from untreated areas tended to conceal the extent of the effects. DDT and dieldrin have become ubiquitous and the original source of the chemicals producing bird deaths often cannot be traced. The extent of sublethal effects cannot be fully appraised, although laboratory experiments continually reveal new and potentially deleterious physiological reactions. Thin eggshells have become prevalent among certain declining species of predatory birds. Shell thinning and associated reproductive effects have been produced experimentally in mallard ducks and in sparrow hawks. Coturnix quail fed dietary dosages of p,p'-DDT produced fewer eggs than did untreated birds and the eggs had thinner shells. Hatchability was not significantly altered. Comparisons between these results and those obtained in other studies indicate significant species differences.

  13. First Thin Film Festival

    NASA Astrophysics Data System (ADS)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  14. Physics of thin films

    SciTech Connect

    Francombe, M.H. ); Vossen, J.L. )

    1992-01-01

    This book of Physics of Thin Films emphasizes two main technical themes. The first is essentially an extension of the topical thrust on Thin Films for Advance Electronic Devices, developed in Volume 15 of this series. The second deals primarily with the physical and mechanical behavior of films and the influence of these in relation to various applications. The first of the four articles in this volume, by Neelkanth G. Dhere, discusses high-transition-temperature (T{sub c}) superconducting films. Since their discovery in 1986, both world-wide research activity and published literature on high-T{sub c} oxide films have exploded at a phenomenal rate. In his treatment, the author presents an effective survey of the already vast literature on this subject, discusses the numerous techniques under development for the growth of these perovskite-related complex oxides, and describes their key properties and applications. In particular, factors affecting the epitaxial structure, critical current capability, and microwave conductivity in Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O based film compositions are evaluated in relation to their use at 77K. An overview of potential applications in a variety of microwave devices, wide-band optical detectors, SQUID-type high-sensitivity magnetometers, etc., is included.

  15. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  16. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  17. Multilayer Thin-Film Microcapacitors

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita; Thakoor, Anil; Karmon, Dan

    1995-01-01

    Miniature capacitors containing multiple alternating thin-film dielectric and metal layers proposed, especially for use in integrated and hybrid electronic circuits. Because capacitance inversely proportional to thickness of dielectric layers, use of thin, high-quality dielectric layers affords capacitance and energy-storage densities much greater than now available. These devices much smaller and more reliable than state-of-art capacitors.

  18. Thin Film Inorganic Electrochemical Systems.

    DTIC Science & Technology

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  19. Dewetting of Thin Polymer Films

    NASA Astrophysics Data System (ADS)

    Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

    2001-03-01

    DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

  20. Magnetochromatic thin-film microplates.

    PubMed

    He, Le; Janner, Michael; Lu, Qipeng; Wang, Mingsheng; Ma, Hua; Yin, Yadong

    2015-01-07

    A new type of magnetochromatic material is developed based on thin-film interference of microplates self-assembled from super-paramagnetic nanocrystals. Dynamic optical tuning can be achieved through orientational manipulation of free-standing super-paramagnetic thin-film microplates using external magnetic fields.

  1. Spinodal dewetting of thin films

    NASA Astrophysics Data System (ADS)

    Jaiswal, Prabhat K.; Puri, S.

    2009-01-01

    Stable thin liquid films are of various scientific and technological applications, e.g., in optical coating, painting technologies, coating thin wires and fibers, lubricants, adhesives, etc. However, the instabilities in a thin film may lead to rupture, hole formation, and other morphological changes which amplify the nonuniformity in the thin film [1]. This morphological evolution in an unstable thin film is generally known as `dewetting' [2]. There have recently been a number of theoretical and experimental studies on dewetting in thin films [3-6]. The process of `spinodal dewetting' comes into the category of a general class of phenomena, spinodal decomposition [7]. The pattern formation taking place during dewetting can also be of great importance in nanotechnology, e.g., for preparing quantum dots [8], nanorings [9], etc. We numerically solve the nonlinear two-dimensional thin film equation [2] for a thin liquid film subjected to the long range van der Waals attraction and short range Born repulsion. The simulation results for the temporal evolution of domains and height profile along diagonal direction of the lattice show the `hills and valleys' short of structures which is the typical morphology obtained during the spinodal dewetting [10]. We obtain the dynamical correlation function and structure factor showing the existence of a characteristic length scale in the system at late time. We give the scaling arguments for the length scale of the drops to be proportional to t1/3 which is in agreement with our numerical results for the domain growth.

  2. Methods of Producing Thin Films,

    DTIC Science & Technology

    The report describes various methods of producing thin films , especially for microelectronics. In addition to the classical methods of forming thin ... films by vacuum vapor deposition, it also describes processes of diode sputtering and modern methods of cathode sputtering by means of a third

  3. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  4. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  5. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  6. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  7. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  8. Composite Thin Films

    SciTech Connect

    Martin, Peter M.

    2003-02-01

    Composites are one of more versatile types of materials, and can be characterized as multicomponent, or multiphase, mixtures. They can have unique structural, optical, electrical and magnetic properties not possible with a simple single component material. One of the best known composite materials is fiberglass, which is composed of glass fibers in a polymer matrix. This family of materials and thin films is highly disordered and inhomogeneous on a microstructural scale. Nanocrystalline and nanoclusters are now actively being investigated. The inhomogeneities can be fibers, clusters of atoms or molecules, grains with different crystalline phases (nanocrystalline clusters), inclusions with different electrical and magnetic properties. Note that the particles can have the same composition as the host material, but will have a different structural geometry. Carbon-carbon composites are a good example, where carbon fibers or threads are incorporated into carbonaceous resin

  9. Holographic thin film analyzer

    NASA Technical Reports Server (NTRS)

    Williams, J. R.; Norden, B. N. (Inventor)

    1973-01-01

    A system for the analysis and measurement of thin films in which the light output of a laser is split into two beams is discribed. The first beam is focused to illuminate the entire area of a photographic plate and the second beam is colummated and directed through a relatively small portion of the photographic plate onto the sample with the film to be observed. The surface of the sample is positioned at a slight angle with respect to a plane normal to the second beam and the light reflected from the sample arrives back at the photographic plate in a region other than through which the second beam originally passes. By making two successive exposures during the deposition of material on the surface of the sample, holograms are recorded on the photographic plate. The plate is then developed and interference lines of the hologram provide a measurement of the film or material deposited between exposure.

  10. Thin θ -film optics

    NASA Astrophysics Data System (ADS)

    Huerta, Luis

    2016-12-01

    A Chern-Simons theory in 3D is accomplished by the so-called θ term in the action (θ /2 )∫F ∧F , which contributes only to observable effects on the boundaries of such a system. When electromagnetic radiation interacts with the system, the wave is reflected and its polarization is rotated at the interface, even when both the θ system and the environment are pure vacuum. These topics have been studied extensively. Here, we investigate the optical properties of a thin θ film, where multiple internal reflections could interfere coherently. The cases of pure vacuum and a material with magnetoelectric properties are analyzed. It is found that the film reflectance is enhanced compared to ordinary non-θ systems and the interplay between magnetoelectric properties and the θ parameter yield film opacity and polarization properties which could be interesting in the case of topological insulators, among other topological systems.

  11. Thin wire pointing method

    NASA Technical Reports Server (NTRS)

    Green, G.; Mattauch, R. J. (Inventor)

    1983-01-01

    A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping an end of a phosphor bronze wire into a dilute solution of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire and another electrode in the solutions is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.

  12. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  13. Thin EFG octagons

    NASA Astrophysics Data System (ADS)

    Kalejs, J. P.

    1994-03-01

    This report describes work to advance the manufacturing line capabilities in crystal growth and laser cutting of Mobil Solar's unique edge-defined film-fed growth (EFG) octagon technology and to reduce the manufacturing costs of 10 cm x 10 cm polycrystalline silicon EFG wafers. The report summarizes the significant technical improvements in EFG technology achieved in the first 6 months of the PVMaT Phase 2 and the success in meeting program milestones. Technical results are reported for each of the three main pregrain areas: Task 5 -- Thin octagon growth (crystal growth) to reduce the thickness of the octagon to 200 microns; Task 6 -- Laser cutting-to improve the laser cutting process so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and Task 7 -- Process control and product specification to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.

  14. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  15. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  16. Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; McNatt, Jeremiah S.; Bailey, Sheila G.; Dickman, John E.; Raffaelle, Ryne P.; Landi, Brian J.; Anctil, Annick; DiLeo, Roberta; Jin, Michael H.-C.; Lee, Chung-Young; hide

    2007-01-01

    The development of hybrid inorganic/organic thin-film solar cells on flexible, lightweight, space-qualified, durable substrates provides an attractive solution for fabricating solar arrays with high mass specific power (W/kg). Next generation thin-film technologies may well involve a revolutionary change in materials to organic-based devices. The high-volume, low-cost fabrication potential of organic cells will allow for square miles of solar cell production at one-tenth the cost of conventional inorganic materials. Plastic solar cells take a minimum of storage space and can be inflated or unrolled for deployment. We will explore a cross-section of in-house and sponsored research efforts that aim to provide new hybrid technologies that include both inorganic and polymer materials as active and substrate materials. Research at University of Texas at Arlington focuses on the fabrication and use of poly(isothianaphthene-3,6-diyl) in solar cells. We describe efforts at Norfolk State University to design, synthesize and characterize block copolymers. A collaborative team between EIC Laboratories, Inc. and the University of Florida is investigating multijunction polymer solar cells to more effectively utilize solar radiation. The National Aeronautics and Space Administration (NASA)/Ohio Aerospace Institute (OAI) group has undertaken a thermal analysis of potential metallized substrates as well as production of nanoparticles of CuInS2 and CuInSe2 in good yield at moderate temperatures via decomposition of single-source precursors. Finally, preliminary work at the Rochester Institute of Technology (R.I.T.) to assess the impact on performance of solar cells of temperature and carbon nanotubes is reported. Technologies that must be developed to enable ultra-lightweight solar arrays include: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. For NASA applications, any solar cell or array technology must not only meet

  17. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  18. Learning unit: Thin lenses

    NASA Astrophysics Data System (ADS)

    Nita, L.-S.

    2012-04-01

    Learning unit: Thin lenses "Why objects seen through lenses are sometimes upright and sometimes reversed" Nita Laura Simona National College of Arts and Crafts "Constantin Brancusi", Craiova, Romania 1. GEOMETRIC OPTICS. 13 hours Introduction (models, axioms, principles, conventions) 1. Thin lenses (Types of lenses. Defining elements. Path of light rays through lenses. Image formation. Required physical quantities. Lens formulas). 2. Lens systems (Non-collated lenses. Focalless systems). 3. Human eye (Functioning as an optical system. Sight defects and their corrections). 4. Optical instruments (Characteristics exemplified by a magnifying glass. Paths of light rays through a simplified photo camera. Path of light rays through a classical microscope) (Physics curriculum for the IXth grade/ 2011). This scenario exposes a learning unit based on experimental sequences (defining specific competencies), as a succession of lessons started by noticing a problem whose solution assumes the setup of an experiment under laboratory conditions. Progressive learning of theme objectives are realised with sequential experimental steps. The central cognitive process is the induction or the generalization (development of new knowledge based on observation of examples or counterexamples of the concept to be learnt). Pupil interest in theme objectives is triggered by problem-situations, for example: "In order to better see small objects I need a magnifying glass. But when using a magnifier, small object images are sometimes seen upright and sometimes seen reversed!" Along the way, pupils' reasoning will converge to the idea: "The image of an object through a lens depends on the relative distances among object, lens, and observer". Associated learning model: EXPERIMENT Specific competencies: derived from the experiment model, in agreement with the following learning unit steps I. Evoking - Anticipation: Size of the problem, formulation of hypotheses and planning of experiment. II

  19. Center for Thin Film Studies

    DTIC Science & Technology

    1991-01-22

    Properties of Hafnium Dioxide Thin Films Appendix C Cross Sections for 170.50 Backscattering of 4He from Oxygen for ’He Energies Between 1.8 and 5.0 MeV...microstructural properties of hafnium dioxide thin films J. P. Lehan, Y. Mao, B. G. Bovard, and H. A. Macleod Summary We have applied a variety of analytical...tools to educe the compositional and morphological changes experienced by thin films of hafnium dioxide deposited under a variety of conditions. Surface

  20. Carbonaceous Chondrite Thin Section Preparation

    NASA Technical Reports Server (NTRS)

    Harrington, R.; Righter, K.

    2017-01-01

    Carbonaceous chondrite meteorites have long posed a challenge for thin section makers. The variability in sample hardness among the different types, and sometimes within individual sections, creates the need for an adaptable approach at each step of the thin section making process. This poster will share some of the procedural adjustments that have proven to be successful at the NASA JSC Meteorite Thin Section Laboratory. These adjustments are modifications of preparation methods that have been in use for decades and therefore do not require investment in new technology or materials.

  1. Non-H{sub 2}Se, ultra-thin CuInSe{sub 2} devices. Annual subcontract report, November 10, 1992--November 9, 1993

    SciTech Connect

    Delahoy, A.E.; Britt, J.; Faras, F.; Kiss, Z.

    1994-09-01

    This report describes advances made during Phase II (November 10, 1992-November 9, 1993) of a three-phase, cost-shared subcontract whose ultimate goal is the demonstration of thin film CuInSe{sub 2} photovoltaic modules prepared by methods adaptable to safe, high yield, high volume manufacturing. At the end of Phase I, EPV became one of the first groups to clear the 10% efficiency barrier for CIS cells prepared by non-H{sub 2}Se selenization. During Phase II a total area efficiency of 12.5% was achieved for a 1 cm{sup 2} cell. The key achievement of Phase II was the production of square foot CIS modules without the use of H{sub 2}Se. This is seen as a crucial step towards the commercialization of CIS. Using a novel interconnect technology, EPV delivered an 8.0% aperture area efficiency mini-module and a 6.2% aperture area efficiency 720 cm{sub 2} module to NREL. On the processing side, advances were made in precursor formation and the selenization profile, both of which contributed to higher quality CIS. The higher band gap quaternary chalcopyrite material CuIn(S{sub x}, Se{sub 1{minus}X}){sub 2} was prepared and 8% cells were fabricated using this material. Device analysis revealed a correlation between long wavelength quantum efficiency and the CIS Cu/In ratio. Temperature dependent studies highlighted the need for high V{sub OC} devices to minimize the impact of the voltage drop at operating temperature. Numerical modeling of module performance was performed in order to identify the correct ZnO sheet resistance for modules. Efforts in Phase III will focus on increase of module efficiency to 9-10%, initiation of an outdoor testing program, preparation of completely uniform CIS plates using second generation selenization equipment, and exploration of alternative precursors for CIS formation.

  2. Chiral atomically thin films.

    PubMed

    Kim, Cheol-Joo; Sánchez-Castillo, A; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm(-1)) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  3. Thin layer chromatography.

    PubMed

    Santiago, Marina; Strobel, Scott

    2013-01-01

    In many experiments, it is important to be able to separate a mixture into its chemical components in order to isolate one compound or to assess the purity of the mixture. Thin layer chromatography (TLC) is one of the easiest and most versatile methods of doing this because of its low cost, simplicity, quick development time, high sensitivity, and good reproducibility. TLC is used by many industries and fields of research, including pharmaceutical production, clinical analysis, industrial chemistry, environmental toxicology, food chemistry, water, inorganic, and pesticide analysis, dye purity, cosmetics, plant materials, and herbal analysis. In its simplest form, glass plates are coated with a uniform layer of silica gel (SiO2). The dissolved sample is placed on the plate, and the plate is inserted into a screw-top jar containing the developing solvent and a piece of filter paper. When the solvent has risen to near the top of the plate, the plate is removed, dried, and visualized using UV light. Variations on this protocol are used for different purposes, including pretreating the sample, changing the sorbent, plate material, the solvent system, the development techniques, and method of detection and visualization or by coupling TLC to other techniques. © 2013 Elsevier Inc. All rights reserved.

  4. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  5. Thin film strain transducer

    NASA Astrophysics Data System (ADS)

    Rand, J. L.

    1981-01-01

    Previous attempts to develop an appropriate sensor for measuring the stress or strain of high altitude balloons during flight are reviewed as well as the various conditions that must be met by such a device. The design, development and calibration of a transducer which promises to satisfy the necessary design constraints are described. The thin film strain transducer has a low effective modulus so as not to interfere with the strain that would naturally occur in the balloon. In addition, the transducer has a high sensitivity to longitudinal strain (7.216 mV/V/unit strain) which is constant for all temperature from room temperature to -80 C and all strains from 5 percent compression to 10 percent tensile strain. At the same time, the sensor is relatively insensitive (0.27 percent) to transverse forces. The device has a standard 350 ohm impedance which is compatible with available bridge balance, amplification and telemetry instrumentation now available for balloon flight. Recommendations are included for improved coatings to provide passive thermal control as well as model, tethered and full scale flight testing.

  6. Thin, Flexible IMM Solar Array

    NASA Technical Reports Server (NTRS)

    Walmsley, Nicholas

    2015-01-01

    NASA needs solar arrays that are thin, flexible, and highly efficient; package compactly for launch; and deploy into large, structurally stable high-power generators. Inverted metamorphic multijunction (IMM) solar cells can enable these arrays, but integration of this thin crystalline cell technology presents certain challenges. The Thin Hybrid Interconnected Solar Array (THINS) technology allows robust and reliable integration of IMM cells into a flexible blanket comprising standardized modules engineered for easy production. The modules support the IMM cell by using multifunctional materials for structural stability, shielding, coefficient of thermal expansion (CTE) stress relief, and integrated thermal and electrical functions. The design approach includes total encapsulation, which benefits high voltage as well as electrostatic performance.

  7. Ultra thin gage plastic film

    NASA Technical Reports Server (NTRS)

    Cox, D. W., Jr.; Struble, A. D.

    1971-01-01

    Process utilizing specially modified conventional equipment, with changes in process temperature, pressure, and cooling requirements produces ultra thin 1.56 micron /0.0614 mil/ thick polyethylene film.

  8. Sealing micropores in thin castings

    NASA Technical Reports Server (NTRS)

    Mersereau, G. A.; Nitzschke, G. O.; Ochs, H. L.; Sutch, F. S.

    1981-01-01

    Microscopic pores in thin-walled aluminum castings are sealed by impregnation pretreatment. Technique was developed for investment castings used in hermetically sealed chassic for electronic circuitry. Excessively high leakage rates were previously measured in some chassis.

  9. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  10. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  11. The thin film microwave iris

    NASA Technical Reports Server (NTRS)

    Ramey, R. L.; Landes, H. S.; Manus, E. A.

    1972-01-01

    Development of waveguide iris for microwave coupling applications using thin film techniques is discussed. Production process and installation of iris are described. Iris improves power transmission properties of waveguide window.

  12. Rotating thin-shell wormhole

    NASA Astrophysics Data System (ADS)

    Ovgun, A.

    2016-11-01

    We construct a rotating thin-shell wormhole using a Myers-Perry black hole in five dimensions, using the Darmois-Israel junction conditions. The stability of the wormhole is analyzed under perturbations. We find that exotic matter is required at the throat of the wormhole to keep it stable. Our analysis shows that stability of the rotating thin-shell wormhole is possible if suitable parameter values are chosen.

  13. Thin EFG octagons

    NASA Astrophysics Data System (ADS)

    Kalejs, J. P.

    1994-01-01

    Mobil Solar Energy Corporation currently practices a unique crystal growth technology for producing crystalline silicon sheet, which is then cut with lasers into wafers. The wafers are processed into solar cells and incorporated into modules for photovoltaic applications. The silicon sheet is produced using a method known as Edge-defined Film-fed growth (EFG), in the form of hollow eight-sided polygons (octagons) with 10 cm faces. These are grown to lengths of 5 meters and thickness of 300 microns, with continuous melt replenishment, in compact furnaces designed to operate at a high sheet area production area of 135 sq cm/min. The present Photovoltaic Manufacturing Technology (PVMaT) three-year program seeks to advance the manufacturing line capabilities of the Mobil Solar crystal growth and cutting technologies. If successful, these advancements will provide significant reductions in already low silicon raw material usage, improve process productivity, laser cutting throughput and yield, and so lower both individual wafer cost and the cost of module production. This report summarizes the significant technical improvements in EFG technology achieved in Phase 1 of this program. Technical results are reported for each of the three main program areas: (1) thin octagon growth (crystal growth) -- to reduce the thickness of the octagon to an interim goal of 250 microns during Phase 1, with an ultimate goal of achieving 200 micron thicknesses; (2) laser cutting -- to improve the laser cutting process, so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and (3) process control and product specification -- to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.

  14. Synthesis and Characterization of Chalcopyrite (CuInS2 and CuhInSe2) Colloidal Nanoparticles for Optoelectronic Applications via Low-Temperature Pyrolysis of Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Castro, S. L.; Bailey, S. G.; Raffaelle, R. P.; Banger, K. K.; Fahey, Stephen; Hepp, A. F.

    2003-01-01

    Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.

  15. Synthesis and Characterization of Chalcopyrite (CuInS2 and CuhInSe2) Colloidal Nanoparticles for Optoelectronic Applications via Low-Temperature Pyrolysis of Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Castro, S. L.; Bailey, S. G.; Raffaelle, R. P.; Banger, K. K.; Fahey, Stephen; Hepp, A. F.

    2003-01-01

    Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.

  16. Thin film cell development workshop report

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1991-01-01

    The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

  17. [A comment on chiral thin layer chromatography].

    PubMed

    Chen, Xuexian; Yuan, Liming

    2016-01-01

    In recent eight years, authors' group has repeated a lot of experiments of chiral thin layer chromatography coming from literature. From the practical opinion, we summarized that there are nine characteristics for chiral thin layer chromatography. Some progresses of chiral thin layer chromatography are reviewed, and the enantioselectivity of a commercial chiral thin layer plate is introduced. The study of vancomycin as the chiral selector in thin layer chromatography is also reported.

  18. Influence of the stacking order on structural features of the Cu-In-Ga-Se precursors for formation of Cu(In,Ga)Se2 thin films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor and diethylselenide gas

    NASA Astrophysics Data System (ADS)

    Dejene, F. B.; Sugiyama, M.; Nakanishi, H.; Alberts, V.; Chichibu, S. F.

    2006-09-01

    A novel partway for the fabrication of copper-indium (gallium) diselenide has been developed. This two-stage process consists of the formation of Cu-In-(Ga)-Se precursors and subsequent selenization to form CuIn(Ga)Se2. In this work, we have investigated and compared the possible interactions in Cu-In-Ga-Se systems, using sequentially stacked precursors premixed with Se, in order to get a better understanding of the Cu(In,Ga)Se2 thin film formation. Comparison of these SEM micrographs clearly revealed that the surface morphologies and hence surface roughness of the resulting Cu(In,Ga)Se2 absorber films were significantly influenced by the structure of the precursor films prior to selenization. XRD analyses revealed the presence of a graded CuIn1-xGaxSe structure, irrespective of the stacking order during the precursor formation step for samples selenized using elemental Se vapor. It was established that distinct from the case of using Se vapor, a single-phase Cu(In,Ga)Se2 films were obtained by diethylselenide (DESe) selenization from Cu-In-Ga metal precursors premixed Se irrespective of the stacking order during the precursor formation step.

  19. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  20. Shear Thinning of Noncolloidal Suspensions.

    PubMed

    Vázquez-Quesada, Adolfo; Tanner, Roger I; Ellero, Marco

    2016-09-02

    Shear thinning-a reduction in suspension viscosity with increasing shear rates-is understood to arise in colloidal systems from a decrease in the relative contribution of entropic forces. The shear-thinning phenomenon has also been often reported in experiments with noncolloidal systems at high volume fractions. However its origin is an open theoretical question and the behavior is difficult to reproduce in numerical simulations where shear thickening is typically observed instead. In this letter we propose a non-Newtonian model of interparticle lubrication forces to explain shear thinning in noncolloidal suspensions. We show that hidden shear-thinning effects of the suspending medium, which occur at shear rates orders of magnitude larger than the range investigated experimentally, lead to significant shear thinning of the overall suspension at much smaller shear rates. At high particle volume fractions the local shear rates experienced by the fluid situated in the narrow gaps between particles are much larger than the averaged shear rate of the whole suspension. This allows the suspending medium to probe its high-shear non-Newtonian regime and it means that the matrix fluid rheology must be considered over a wide range of shear rates.

  1. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... that are thin in body. Grades Grade names and specifications C1L Choice Light-brown Thin Leaf. Thin... percent uniform, and 5 percent injury tolerance. C2L Fine Light-brown Thin Leaf. Thin, ripe, firm, oily... percent injury tolerance. C3L Good Light-brown Thin Leaf. Thin, ripe, firm, oily, inelastic, normal...

  2. Thin metal electrode for AMTEC

    NASA Technical Reports Server (NTRS)

    Williams, Roger M. (Inventor); Wheeler, Bob L. (Inventor); Jefferies-Nakamura, Barbara (Inventor); Lamb, James L. (Inventor); Bankston, C. Perry (Inventor); Cole, Terry (Inventor)

    1989-01-01

    An electrode having higher power output is formed of a thin, porous film (less than 1 micrometer) applied to a beta-alumina solid electrolyte (BASE). The electrode includes an open grid, current collector such as a series of thin, parallel, grid lines applied to the thin film and a plurality of cross-members such as loop of metal wire surrounding the BASE tube. The loops are electrically connected by a bus wire. The overall impedance of the electrode considering both the contributions from the bulk BASE and the porous electrode BASE interface is low, about 0.5 OHM/cm.sup.2 and power densities of over 0.3 watt/cm.sup.2 for extended periods.

  3. A thin film strain transducer

    NASA Technical Reports Server (NTRS)

    Rand, J. L.

    1983-01-01

    A device has been developed for the purpose of measuring longitudinal strain in thin polyethylene films. This paper describes the design, development, calibration, and application of this unique transducer in a variety of low temperature environments. This thin, ring-shaped device has a low effective modulus so as not to interfere with the strain that would naturally occur in a thin film. It has a standard 350 ohm impedance which is compatible with most available bridge balance, amplification, and telemetry instrumentation. This transducer has been successfully used for viscoelastic material characterization experiments in the laboratory, as well as in flight measurements of strain on the surface of scientific balloons during inflation, launch, ascent, and float.

  4. Squirming through shear thinning fluids

    NASA Astrophysics Data System (ADS)

    Datt, Charu; Zhu, Lailai; Elfring, Gwynn J.; Pak, On Shun

    2015-11-01

    Many microorganisms find themselves surrounded by fluids which are non-Newtonian in nature; human spermatozoa in female reproductive tract and motile bacteria in mucosa of animals are common examples. These biological fluids can display shear-thinning rheology whose effects on the locomotion of microorganisms remain largely unexplored. Here we study the self-propulsion of a squirmer in shear-thinning fluids described by the Carreau-Yasuda model. The squirmer undergoes surface distortions and utilizes apparent slip-velocities around its surface to swim through a fluid medium. In this talk, we will discuss how the nonlinear rheological properties of a shear-thinning fluid affect the propulsion of a swimmer compared with swimming in Newtonian fluids.

  5. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  6. Benefits from Thinning Black Willow

    Treesearch

    R. L. Johnson; J. S. McKnight

    1969-01-01

    Black willow stands 18 and 24 years old were cut from about 130 square feet of basal area per acre to near 95, 75, and 55 square feet. Growth was best on plots thinned to 55 square feet in the 24-year-old stand and to 95 square feet in the 18-yearold stand. The stands were along the Mississippi River.

  7. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  8. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  9. Early Thinning in Bottomland Hardwoods

    Treesearch

    Madison P. Howell; Lawrence E. Nix

    2002-01-01

    A 23-year-old sprout origin stand in the Congaree river bottom near Columbia S.C was commercially thinned in 1994 using standard "Leave Tree", "Trainer Tree", and "Corridor" methods. The stand consisted of 260-325 trees per acre and 28-31 cords per acre. There were 90-140 potential crop trees (30 to 40 percent commercial oaks) of...

  10. New strategies for thinning peaches

    USDA-ARS?s Scientific Manuscript database

    An evaluation of two mechanical thinners was conducted in four commercial peach orchard blocks in 2007. A mechanical blossom thinner designed by a German grower for thinning apple trees that employed nylon cords (strings) to remove blossoms was tested on peach trees trained to either a perpendicula...

  11. Thin Film Solid Lubricant Development

    NASA Technical Reports Server (NTRS)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  12. High Performance Thin Layer Chromatography.

    ERIC Educational Resources Information Center

    Costanzo, Samuel J.

    1984-01-01

    Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

  13. Shear Thinning of Noncolloidal Suspensions

    NASA Astrophysics Data System (ADS)

    Vázquez-Quesada, Adolfo; Tanner, Roger I.; Ellero, Marco

    2016-09-01

    Shear thinning—a reduction in suspension viscosity with increasing shear rates—is understood to arise in colloidal systems from a decrease in the relative contribution of entropic forces. The shear-thinning phenomenon has also been often reported in experiments with noncolloidal systems at high volume fractions. However its origin is an open theoretical question and the behavior is difficult to reproduce in numerical simulations where shear thickening is typically observed instead. In this letter we propose a non-Newtonian model of interparticle lubrication forces to explain shear thinning in noncolloidal suspensions. We show that hidden shear-thinning effects of the suspending medium, which occur at shear rates orders of magnitude larger than the range investigated experimentally, lead to significant shear thinning of the overall suspension at much smaller shear rates. At high particle volume fractions the local shear rates experienced by the fluid situated in the narrow gaps between particles are much larger than the averaged shear rate of the whole suspension. This allows the suspending medium to probe its high-shear non-Newtonian regime and it means that the matrix fluid rheology must be considered over a wide range of shear rates.

  14. Surface plasmons on thin films

    NASA Astrophysics Data System (ADS)

    Fallesen, Todd; Jahncke, Cl; Hallen, Hd

    2004-03-01

    Surface plasmons on silver, gold and aluminum thin films are measured using a total internal reflection geometry. These measurements are made with a simple apparatus using a differential gear box which will be described. The surface plasmon resonances are compared with theoretical calculations for different film thicknesses and materials.

  15. High Performance Thin Layer Chromatography.

    ERIC Educational Resources Information Center

    Costanzo, Samuel J.

    1984-01-01

    Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

  16. Center for Thin Film Studies

    DTIC Science & Technology

    1988-10-31

    Determination of the Thickness and Optical Constants of Thin Metallic Films," J. Opt. Soc. Am. 71. 189 (1981). 24. F. Abeles and T. Lopez -Rios...Burton, N. Cabrera , & F. C. Frank, "The Growth of Crystals and the Equilibrium Structure of Their Surfaces", Phil. Trans. Roy. Soc., A23, 299-358 (1951

  17. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  18. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  19. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  20. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  1. On thinning of chains in MCMC

    USGS Publications Warehouse

    Link, William A.; Eaton, Mitchell J.

    2012-01-01

    4. We discuss the background and prevalence of thinning, illustrate its consequences, discuss circumstances when it might be regarded as a reasonable option and recommend against routine thinning of chains unless necessitated by computer memory limitations.

  2. Thin films under chemical stress

    SciTech Connect

    Not Available

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  3. Lithographic Micropatterning of Polythiophene Thin-Films.

    DTIC Science & Technology

    OXYGEN, POLYMERS, PROCESSING, PROPANOLS, REACTIVITIES, REFRACTIVE INDEX, REPRODUCTION(COPYING), SEMICONDUCTORS, SILICATES, SOLVENTS, STRUCTURES, SURFACE PROPERTIES, THICKNESS, THIN FILMS , THIOPHENES.

  4. A novel non-vacuum process for the preparation of CuIn(Se,S)2 thin-film solar cells from air-stable, eco-friendly, metal salts based solution ink

    NASA Astrophysics Data System (ADS)

    Luo, Paifeng; Liu, Zhaofan; Ding, Yuankui; Cheng, Jigui

    2015-01-01

    A facile solution-based non-vacuum process for deposition of CuIn(Se,S)2 (CISeS) absorber layers is presented in this work, which indicates a promising way for the low-cost applications in thin-film solar cells. Firstly, low-boiling-point solvents Monobutylamine C4H11N and Carbon disulfide CS2 are selected as the complexing and thickening agents and added into the Cu/In metal salts based solution. Thus the air-stable, eco-friendly solution ink is successfully synthesized through a simple solution synthesis route. The detailed chemical reaction mechanism and the influence of the composition of precursor solution have been discussed intensively as well. After sequential spin-coating, hot-treatment and selenization process, the high-quality CISeS films are obtained and then characterized by XRD, Raman, SEM, EDS, Metallographic microscope, Hall Effect measurement and UV-vis-NIR spectroscopy, respectively. It is found that the compact CISeS films with chalcopyrite α-phase possess a double-layer structure, and also incorporate with a little ordered vacancy compounds (OVCs) and Cu2-xSe impurities. The typical near stoichiometric CISeS films without Carbon residuals have superior photoelectric properties with carrier concentration of 3.46 × 1016 N cm-3 and band gap of 1.15 eV. Finally, the original first-made PV devices provide a power conversion efficiency (PCE) of 4.25%, which can be further improved by increasing the thickness of CISeS films and/or optimizing the selenization and sulfuration technologies.

  5. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... tolerance. C4L Fair Quality Light-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in oil... tolerance. C5L Low Quality Light-brown Thin Leaf Underripe, thin, close leaf structure, rough, lean in oil... tolerance. C4F Fair Quality Medium-brown Thin Leaf. Mature, thin, close leaf structure, rough, lean in oil...

  6. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... Choice Light-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, strong... Light-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, strong, clear...-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, normal strength, clear...

  7. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... tolerance. C4L Fair Light-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish... Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish, pale color intensity, narrow... tolerance. C4F Fair Medium-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish...

  8. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... tolerance. C4L Fair Light-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish... Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish, pale color intensity, narrow... tolerance. C4F Fair Medium-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish...

  9. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... Choice Light-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, strong... Light-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, strong, clear...-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, normal strength, clear...

  10. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth... injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily... tolerance. C1F Choice Quality Medium-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, rich in oil...

  11. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth... injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily... tolerance. C1F Choice Quality Medium-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, rich in oil...

  12. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth... injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily... tolerance. C1F Choice Quality Medium-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, rich in oil...

  13. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... Choice Light-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, strong... Light-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, strong, clear...-brown Thin Leaf. Thin to medium body, mature to ripe, firm, oily, semielastic, normal strength, clear...

  14. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... Fair Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak... Light-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak, dull... Medium-brown Thin Leaf. Thin to medium body, mature to ripe, close, lean in oil, inelastic, weak,...

  15. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... tolerance. C4L Fair Light-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish... Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull finish, pale color intensity, narrow... tolerance. C4F Fair Medium-brown Thin Leaf. Thin, mature, close, lean in oil, inelastic, weak, dull...

  16. Fundamentals of thin solar cells

    SciTech Connect

    Yablonovitch, E.

    1995-08-01

    It is now widely recognized that thin solar cells can present certain advantages for performance and cost. This is particularly the case when light trapping in the semiconductor film is incorporated, as compensation for the diminished single path thickness of the solar cell. In a solar cell thinner than a minority carrier diffusion length, the current collection is of course very easy. More importantly the concentration of an equivalent number of carriers in a thinner volume results in a higher Free Energy, or open circuit voltage. This extra Free Energy may be regarded as due to the concentration factor, just as it would be for photons, electrons, or for any chemical species. The final advantage of a thin solar cell is in the diminished material usage, a factor of considerable importance when we consider the material cost of the high quality semiconductors which we hope to employ.

  17. Laminated thin film solar module

    SciTech Connect

    Berman, E.; Eisner, K.P.

    1986-11-25

    This patent describes a solar module comprising: a first untempered glass sheet having a first side forming a light receiving face of a solar module and a second side, a thin film photovoltaic device fabricated on the second side of the first glass sheet, a second tempered glass sheet spaced from the second side of the first sheet and forming the primary structural member of the solar module; and a pottant layer filling substantially all space between the first and second glass sheets and bonding the sheets together. This patent describes a solar module according to claim 1 further including a second thin film photovoltaic device fabricated on a surface of the second tempered glass sheet.

  18. Thin film trichloroethylene electrochemical sensor.

    PubMed

    Chen, Min-Hua; Liu, Chung-Chiun; Chou, Tse-Chuan

    2004-07-30

    Pt-Ti and Pb-Pt-Ti thin films were deposited on alumina substrates by sputtering in Ar gas. In this study, an electrodeposited Pb-modified Pt-Ti thin film working electrode was prepared. Optimal sensing conditions were found to be -2.10 V (versus Ag/Ag+ with 0.1 M tetrabutylammonium perchlorate (TBAP) in acetonitrile (AN) solution) sensing potential, 250 rpm agitation rate. At room temperature, the response time was 15 s (90% response time). The correlation of sensing response current, id, and trichloroethylene (TCE) concentration, CL, is id = 2.86CL in the range from 100 to 700 ppm TCE. Additionally, the rate constant of (TCE) cathodic reduction was found to be 2.434 x 10(-3) cm(-1) s(-1).

  19. Thin film fuel cell electrodes.

    NASA Technical Reports Server (NTRS)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  20. Flexible thin film magnetoimpedance sensors

    NASA Astrophysics Data System (ADS)

    Kurlyandskaya, G. V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz.

  1. Thin film concentrator panel development

    NASA Technical Reports Server (NTRS)

    Zimmerman, D. K.

    1982-01-01

    The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

  2. Techniques in Thin Film Fabrication

    DTIC Science & Technology

    1988-01-01

    introduced a novel time -of- flight (TOF) particle detector which utilized an ultra-thin plastic scintillator film as a transmission detector. In this...10ug/cm2 ) while maintaining a quite adequate signal-to-noise ratio. It offered a relatively simple and compact system for measuring flight times of...system [2]. Though the amplitude of the pulses generated by the scintil- lating film was of no real consequence in determining flight times (as long as

  3. The Thin Oil Film Equation

    NASA Technical Reports Server (NTRS)

    Brown, James L.; Naughton, Jonathan W.

    1999-01-01

    A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

  4. (Thin films under chemical stress)

    SciTech Connect

    Not Available

    1990-01-01

    As stated above the purpose of this research is to enable workers in a variety of fields to understand the chemical and physical changes which take place when thin films (primarily organic films) are placed under chemical stress. This stress may occur because the film is being swelled by penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). These questions are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers, which might have unique functional properties. In the past year we have concentrated on the following objectives: (1) understanding how the two possible diffusion mechanisms contribute to the swelling of thin films of organic polymers place in solution, (2) identifying systems which are appropriate polymer media for the construction of composite membranes for use in aqueous environments, and (3) understanding the self-assembly process for long chain fatty acids at model surfaces. Progress in meeting each of these objectives will be described in this report. 4 figs.

  5. Scattering from Thin Dielectric Disks

    NASA Technical Reports Server (NTRS)

    Levine, D. M.; Schneider, A.; Lang, R. H.; Carter, H. G.

    1984-01-01

    A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectric properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T is sufficiently large the disk will always be in one or the other of these regimes (T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

  6. Scattering from thin dielectric disks

    NASA Technical Reports Server (NTRS)

    Le Vine, D. M.; Schneider, A.; Lang, R. H.; Carter, H. G.

    1985-01-01

    A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectic properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T sufficiently large the disk will always be in one or the other of these regimes, T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

  7. Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

    DOE PAGES

    Rajbhandari, Pravakar P.; Bikowski, Andre; Perkins, John D.; ...

    2016-09-20

    In this study, the development of tunable contact materials based on environmentally friendly chemical elements using scalable deposition approaches is necessary for existing and emerging solar energy conversion technologies. In this paper, the properties of ZnO alloyed with magnesium (Mg), and doped with gallium (Ga) are studied using combinatorial thin film experiments. As a result of these studies, the optical band gap of the sputtered Zn1-xMgxO thin films was determined to vary from 3.3 to 3.6 eV for a compositional spread of Mg content in the 0.04 < x < 0.17 range. Depending on whether or not Ga dopants weremore » added, the electron concentrations were on the order of 1017 cm-3 or 1020 cm-3, respectively. Based on these results and on the Kelvin Probe work function measurements, a band diagram was derived using basic semiconductor physics equations. The quantitative determination of how the energy levels of Ga-doped (Zn, Mg)O thin films change as a function of Mg composition presented here, will facilitate their use as optimized contact layers for both Cu2ZnSnS4 (CZTS), Cu(In, Ga)Se2 (CIGS) and other solar cell absorbers.« less

  8. Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

    SciTech Connect

    Rajbhandari, Pravakar P.; Bikowski, André; Perkins, John D.; Dhakal, Tara P.; Zakutayev, Andriy

    2017-01-01

    Development of tunable contact materials based on environmentally friendly chemical elements using scalable deposition approaches is necessary for existing and emerging solar energy conversion technologies. In this paper, the properties of ZnO alloyed with magnesium (Mg), and doped with gallium (Ga) are studied using combinatorial thin film experiments. As a result of these studies, the optical band gap of the sputtered Zn1-xMgxO thin films was determined to vary from 3.3 to 3.6 eV for a compositional spread of Mg content in the 0.04 < x < 0.17 range. Depending on whether or not Ga dopants were added, the electron concentrations were on the order of 1017 cm-3 or 1020 cm-3, respectively. Based on these results and on the Kelvin Probe work function measurements, a band diagram was derived using basic semiconductor physics equations. The quantitative determination of how the energy levels of Ga-doped (Zn, Mg)O thin films change as a function of Mg composition presented here, will facilitate their use as optimized contact layers for both Cu2ZnSnS4 (CZTS), Cu(In, Ga)Se2 (CIGS) and other solar cell absorbers.

  9. Thinning increases climatic resilience of red pine

    USGS Publications Warehouse

    Magruder, Matthew; Chhin, Sophan; Palik, Brian; Bradford, John B.

    2013-01-01

    Forest management techniques such as intermediate stand-tending practices (e.g., thinning) can promote climatic resiliency in forest stands by moderating tree competition. Residual trees gain increased access to environmental resources (i.e., soil moisture, light), which in turn has the potential to buffer trees from stressful climatic conditions. The influences of climate (temperature and precipitation) and forest management (thinning method and intensity) on the productivity of red pine (Pinus resinosa Ait.) in Michigan were examined to assess whether repeated thinning treatments were able to increase climatic resiliency (i.e., maintaining productivity and reduced sensitivity to climatic stress). The cumulative productivity of each thinning treatment was determined, and it was found that thinning from below to a residual basal area of 14 m2·ha−1 produced the largest average tree size but also the second lowest overall biomass per acre. On the other hand, the uncut control and the thinning from above to a residual basal area of 28 m2·ha−1 produced the smallest average tree size but also the greatest overall biomass per acre. Dendrochronological methods were used to quantify sensitivity of annual radial growth to monthly and seasonal climatic factors for each thinning treatment type. Climatic sensitivity was influenced by thinning method (i.e., thinning from below decreased sensitivity to climatic stress more than thinning from above) and by thinning intensity (i.e., more intense thinning led to a lower climatic sensitivity). Overall, thinning from below to a residual basal area of 21 m2·ha−1 represented a potentially beneficial compromise to maximize tree size, biomass per acre, and reduced sensitivity to climatic stress, and, thus, the highest level of climatic resilience.

  10. Computational modeling of thin ceramic tiles backed by thin substrates

    SciTech Connect

    Walker, J.D.; Anderson, C.E. Jr.; Cox, P.A.

    1995-12-31

    Building on the work of Wilkins, Eulerian hydrocode calculations were performed with ceramic models to examine the behavior of thin ceramic tiles backed by a thin substrate. In order to match ballistic limit data it was necessary to include a pressure dependent flow stress for failed ceramic. Reasonable agreement is found between the modified model and ballistic limit data for a simulated armor piercing round impacting an AD-85 alumina/6061T6 aluminum laminate. Based upon this success, the modified model was used to examine the performance of a SiC/6061T6 aluminum laminate when impacted by an M80 ball round (7.62 mm) at muzzle velocity. The projectile undergoes large deformation, as does the aluminum backing sheet. The computational results indicate, for the M80 projectile impacting at muzzle velocity, that the ballistic limit thickness for the SiC/aluminum laminate should weigh 10% less than the ballistic limit thickness for steel. The talk will include a video tape of calculations.

  11. New thin materials for electronics.

    SciTech Connect

    Schwartzberg, Adam

    2012-02-01

    The work described in this report is from an Early Career LDRD to develop and investigate novel thin film organic conductors with drastically improved electronic properties over the current state of the art. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory a Langmuir-Blodgett trough (LB) was built from scavenged parts and added to a scanning Raman microscope at LBNL. First order thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have helped position Sandia for advances in this area of MOF film creation. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory, a Langmuir-Blodgett trough (LB) was built and added to a scanning Raman microscope at LBNL. Thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy, and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have positioned Sandia for advance in this area of MOF film creation. The interactions with LBNL also led to award of two user projects at the Molecular Foundry at LBNL led by current Sandia staff and the appointment of a current Sandia staff to the Molecular Foundry User Executive Committee.

  12. Improved Thin, Flexible Heat Pipes

    NASA Technical Reports Server (NTRS)

    Rosenfeld, John H.; Gernert, Nelson J.; Sarraf, David B.; Wollen, Peter J.; Surina, Frank C.; Fale, John E.

    2004-01-01

    Flexible heat pipes of an improved type are fabricated as layers of different materials laminated together into vacuum- tight sheets or tapes. In comparison with prior flexible heat pipes, these flexible heat pipes are less susceptible to leakage. Other advantages of these flexible heat pipes, relative to prior flexible heat pipes, include high reliability and greater ease and lower cost of fabrication. Because these heat pipes are very thin, they are highly flexible. When coated on outside surfaces with adhesives, these flexible heat pipes can be applied, like common adhesive tapes, to the surfaces of heat sinks and objects to be cooled, even if those surfaces are curved.

  13. Advanced Thin Ionization Calorimeter (ATIC)

    NASA Technical Reports Server (NTRS)

    Wefel, John P.

    1998-01-01

    This is the final report for NASA grant NAGW-4577, "Advanced Thin Ionization Calorimeter (ATIC)". This grant covered a joint project between LSU and the University of Maryland for a Concept Study of a new type of fully active calorimeter to be used to measure the energy spectra of very high energy cosmic rays, particularly Hydrogen and Helium, to beyond 1014 eV. This very high energy region has been studied with emulsion chamber techniques, but never investigated with electronic calorimeters. Technology had advanced to the point that a fully active calorimeter based upon Bismuth Germanate (BGO) scintillating crystals appeared feasible for balloon flight (and eventually space) experiments.

  14. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  15. Catastrophic Thinning of Dielectric Elastomers

    NASA Astrophysics Data System (ADS)

    Zurlo, G.; Destrade, M.; DeTommasi, D.; Puglisi, G.

    2017-02-01

    We provide an energetic insight into the catastrophic nature of thinning instability in soft electroactive elastomers. This phenomenon is a major obstacle to the development of giant actuators, yet it is neither completely understood nor modeled accurately. In excellent agreement with experiments, we give a simple formula to predict the critical voltages for instability patterns; we model their shape and show that reversible (elastic) equilibrium is impossible beyond their onset. Our derivation is fully analytical, does not require finite element simulations, and can be extended to include prestretch and various material models.

  16. Stability of thin liquid curtains

    NASA Astrophysics Data System (ADS)

    Benilov, E. S.; Barros, R.; O'Brien, S. B. G.

    2016-10-01

    We investigate the stability of thin liquid curtains with respect to two-dimensional perturbations. The dynamics of perturbations with wavelengths exceeding (or comparable to) the curtain's thickness are examined using the lubrication approximation (or a kind of geometric optics). It is shown that, contrary to the previous theoretical results, but in agreement with the experimental ones, all curtains are stable with respect to small perturbations. Large perturbations can still be unstable, however, but only if they propagate upstream and, thus, disrupt the curtain at its outlet. This circumstance enables us to obtain an effective stability criterion by deriving an existence condition for upstream propagating perturbations.

  17. Generic thin-shell gravastars

    SciTech Connect

    Martin-Moruno, Prado; Visser, Matt; Garcia, Nadiezhda Montelongo; Lobo, Francisco S.N. E-mail: nmontelongo@fis.cinvestav.mx E-mail: matt.visser@msor.vuw.ac.nz

    2012-03-01

    We construct generic spherically symmetric thin-shell gravastars by using the cut-and-paste procedure. We take considerable effort to make the analysis as general and unified as practicable; investigating both the internal physics of the transition layer and its interaction with 'external forces' arising due to interactions between the transition layer and the bulk spacetime. Furthermore, we discuss both the dynamic and static situations. In particular, we consider 'bounded excursion' dynamical configurations, and probe the stability of static configurations. For gravastars there is always a particularly compelling configuration in which the surface energy density is zero, while surface tension is nonzero.

  18. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  19. MCP performance improvement using alumina thin film

    NASA Astrophysics Data System (ADS)

    Yang, Yuzhen; Yan, Baojun; Liu, Shulin; Zhao, Tianchi; Yu, Yang; Wen, Kaile; Li, Yumei; Qi, Ming

    2017-10-01

    The performance improvement using alumina thin film on a dual microchannel plate (MCP) detector for single electron counting was investigated. The alumina thin film was coated on all surfaces of the MCPs by atomic layer deposition method. It was found that the gain, the single electron resolution and the peak-to-valley ratio of the dual MCP detector were significantly enhanced by coating the alumina thin film. The optimum operating conditions of the new dual MCP detector have been studied.

  20. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics

    DTIC Science & Technology

    2012-06-01

    CdTe and ZnO single-phase thin films , nanocomposite films ...for the CdTe -ZnO thin film system under these conditions. c. Optical Absorption The films produced in the present study consistently exhibited...optical absorbance spectra collected from CdTe -ZnO multilayer nanocomposite thin films . The effect of CdTe layer thickness used per deposition cycle

  1. A numerical study of forced lithospheric thinning

    NASA Technical Reports Server (NTRS)

    Schubert, G.; Anderson, A.; Fishbein, E.

    1985-01-01

    Subsolidus lithospheric thinning by mantle plumes may be involved in the creation of swells, hotspots, and rifts. Among the major questions concerning this process are the timescale on which it occurs and the structure of the plumes. The lithosphere is known to have been substantially thinned in 10 Ma or less. Current studies are focused on the lithospheric thinning by time-dependent plumes hypothesized to have large temperature differences across them.

  2. LOW POWER THIN MAGNETIC FILM MEMORY

    DTIC Science & Technology

    COATINGS, *MEMORY DEVICES, *DATA STORAGE SYSTEMS, *MAGNETIC MATERIALS, *THIN FILM STORAGE DEVICES, DIODES, ELECTRIC CONNECTORS, MAGNETIC CORES, MAGNETIC PROPERTIES, METAL FILMS, SILICON COMPOUNDS, TEXTILE INDUSTRY , TRANSFORMERS.

  3. Characteristics Of Vacuum Deposited Sucrose Thin Films

    NASA Astrophysics Data System (ADS)

    Ungureanu, F.; Predoi, D.; Ghita, R. V.; Vatasescu-Balcan, R. A.; Costache, M.

    Thin films of sucrose (C12H22O11) were deposited on thin cut glass substrates by thermal evaporation technique (p ~ 10-5 torr). The surface morphology was putted into evidence by FT-IR and SEM analysis. The experimental results confirm a uniform deposition of an adherent sucrose layer. The biological tests (e.g., cell morphology and cell viability evaluated by measuring mitochondrial dehydrogenise activity with MTT assay) confirm the properties of sucrose thin films as bioactive material. The human fetal osteoblast system grown on thin sucrose film was used for the determination of cell proliferation, cell viability and cell morphology studies.

  4. A thin film nitinol heart valve.

    PubMed

    Stepan, Lenka L; Levi, Daniel S; Carman, Gregory P

    2005-11-01

    In order to create a less thrombogenic heart valve with improved longevity, a prosthetic heart valve was developed using thin film nitinol (NiTi). A "butterfly" valve was constructed using a single, elliptical piece of thin film NiTi and a scaffold made from Teflon tubing and NiTi wire. Flow tests and pressure readings across the valve were performed in vitro in a pulsatile flow loop. Bio-corrosion experiments were conducted on untreated and passivated thin film nitinol. To determine the material's in vivo biocompatibility, thin film nitinol was implanted in pigs using stents covered with thin film NiTi. Flow rates and pressure tracings across the valve were comparable to those through a commercially available 19 mm Perimount Edwards tissue valve. No signs of corrosion were present on thin film nitinol samples after immersion in Hank's solution for one month. Finally, organ and tissue samples explanted from four pigs at 2, 3, 4, and 6 weeks after thin film NiTi implantation appeared without disease, and the thin film nitinol itself was without thrombus formation. Although long term testing is still necessary, thin film NiTi may be very well suited for use in artificial heart valves.

  5. Beryllium thin films for resistor applications

    NASA Technical Reports Server (NTRS)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  6. THIN FILMS FORMED BY ELECTROCHEMICAL REACTIONS

    DTIC Science & Technology

    ELECTROCHEMISTRY, * THIN FILMS (STORAGE DEVICES), ALUMINUM, ANODES (ELECTROLYTIC CELL), CAPACITORS, CIRCUITS, MICROMETERS, NIOBIUM, OXIDATION, RESISTORS, TANTALUM, TITANIUM, TUNGSTEN, VACUUM APPARATUS, ZIRCONIUM

  7. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  8. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  9. Solid state thin disk laser

    NASA Astrophysics Data System (ADS)

    Huegel, Helmut; Bohn, Willy L.

    1998-12-01

    Most high power applications either production or defense oriented require good beam quality. A state-of-the-art review shows that current solid state lasers exhibit a clear deficiency as compared to well developed gas lasers. This may be overcome by the new concept of a diode pumped thin disc laser combining the advantages of low optical degradation of the laser medium and good output power scalability. This solid state laser benefits further from the shorter wavelength and better coupling efficiency for a wide range of materials. Yb:YAG is chosen as the preferred laser material because it primarily has a high quantum efficiency, guarantees good energy storage for pulsed operation, and exhibits a broad absorption line at 941 nm for easy and effective pumping with InGaAs diodes. Performance data of the thin disc laser are shown for output powers up tp 350 W CW with optical and slope efficiencies of 49% and 56%, respectively. Scalability of the concept is demonstrated by using a multiple disc design with a zig-zag stable resonator. Beam quality parameter, M2, has also been determined for al operation conditions. Best values of M2 equals 1.22 have been obtained for 100 W output power at 39% optical efficiency. In addition, passive mode locking and Q-switched operation are demonstrated. Finally, performance in alternative laser active materials (Nd:YAG, Nd:YVO4, Tm:YAG) is also presented.

  10. Plasmonics in atomically thin materials.

    PubMed

    García de Abajo, F Javier; Manjavacas, Alejandro

    2015-01-01

    The observation and electrical manipulation of infrared surface plasmons in graphene have triggered a search for similar photonic capabilities in other atomically thin materials that enable electrical modulation of light at visible and near-infrared frequencies, as well as strong interaction with optical quantum emitters. Here, we present a simple analytical description of the optical response of such kinds of structures, which we exploit to investigate their application to light modulation and quantum optics. Specifically, we show that plasmons in one-atom-thick noble-metal layers can be used both to produce complete tunable optical absorption and to reach the strong-coupling regime in the interaction with neighboring quantum emitters. Our methods are applicable to any plasmon-supporting thin materials, and in particular, we provide parameters that allow us to readily calculate the response of silver, gold, and graphene islands. Besides their interest for nanoscale electro-optics, the present study emphasizes the great potential of these structures for the design of quantum nanophotonics devices.

  11. Stability of thin liquid films

    SciTech Connect

    Bankoff, S.G.; Davis, S.H.

    1994-12-31

    Two topics are discussed in the present progress report. The first is a study of the stability of the interface between two thin immiscible fluid layers in a two-dimensional channel. The flowrates may be specified, or alternatively the total pressure drop and the flowrate of one fluid. The channel may be horizontal or inclined. A long-wave 3D nonlinear evolution equation is derived for the local layer thickness, whose coefficients are high-order polynomials of the viscosity ratio and the initial volume fraction. With a further restriction to small wave amplitude, as well as many slopes, a Kuramoto-Sivashinsky-type (KS) is derived. In countercurrent flow the {open_quotes}group velocity{close_quotes} of the interface can become very small, possibly signaling the onset of flooding. In this case a cubic nonlinearity becomes significant. The properties of this modified KS equation are explored in considerable detail. The classical Yih-Benjamin linear stability theory for long waves on an unforced thin liquid film down a vertical wall has never been experimentally verified, owing to the sensitivity to small random disturbances. However, by careful balancing and by operating under very quiet conditions, the theoretical predictions were verified for the first time. For pointwise measurements, 25-{mu}m resistivity probes were employed, and for global measurements fluorescent imaging.

  12. Thin-Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.

    1993-01-01

    Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.

  13. Drying of thin colloidal films

    NASA Astrophysics Data System (ADS)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  14. Thin film of biocompatible polysaccharides

    NASA Astrophysics Data System (ADS)

    Richert, Ludovic; Lavalle, Philippe; Schaaf, Pierre; Voegel, Jean-Claude; Picart, Catherine

    2003-03-01

    The layer-by-layer deposition method proposed by Decher et al. (1991) is a very simple and versatile method used to build thin films. These films are of interest for bioengineering because of their unique properties and of the possible insertion of bioactive molecules. We present here the peculiar properties of a new kind of film formed with natural biopolymers, namely hyaluronan (HA)and chitosan (CHI). The films may be used as biomimetic substrates to control bacterial and cell adhesion. These polysaccharides are of particular interest because they are biodegradable, non toxic, and can be found in various tissues. Hyaluronan is also a natural ligand for a numerous type of cells through the CD44 receptor. Chitosan has already largely been used for its biological and anti-microbial properties. (CHI/HA) films were built in acidic pH at different ionic strength. The buildup was followed in situ by optical waveguide lightmode spectroscopy (OWLS), quartz crystal microbalance, streaming potential measurements and atomic force microscopy. The kinetics of adsorption and desorption of the polyelectrolytes depended on the ionic strength. Small islands were initially present on the surface which grew by mutual coalescence until becoming a flat film. The films were around 200 nm in thickness. These results suggest that different types of thin films constituted of polysaccharides can be built on any type of surface. These films are currently investigated toward their cell adhesion and bacterial adhesion properties.

  15. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... tolerance. C1F Choice Quality Medium-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, rich in oil... tolerance. C2F Fine Quality Medium-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, rich in oil... that are thin to medium in body and show little or no ground injury. Grades Grade names, minimum...

  16. An annotated bibliography of thinning literature.

    Treesearch

    Bryce J. Stokes

    1992-01-01

    This bibliography is a general review of thinning with an emphasis on harvesting in the southern United States. It was developed to aid the decision-making process of foresters and as a basis for continued research in thinning of pine stands.

  17. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  18. Thin Silicon MEMS Contact-Stress Sensor

    SciTech Connect

    Kotovksy, J; Tooker, A; Horsley, D

    2010-05-28

    This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.

  19. Diameter growth of upland oaks after thinning

    Treesearch

    Donald E. Hilt

    1979-01-01

    Diameter growth rates of the 40 largest trees per acre on 154 permanent plots in Kentucky, Ohio, Missouri, and Iowa were analyzed to determine the effects of thinning in upland oak stands. The plots were established over a wide range of stocking levels, stand age, and site conditions. Thinning resulted in increased diameter growth of the residual trees, regardless of...

  20. Does thinning affect gypsy moth dynamics?

    Treesearch

    Andrew M. Liebhold; Rose-Marie Muzika; Kurt W. Gottschalk

    1998-01-01

    In northeastern U.S. forests there is considerable variation in susceptibility (defoliation potential) and vulnerability (tree mortality) to gypsy moth (Lymantria dispar [L.]). Thinning has been suggested as a way to reduce susceptibility and/or vulnerability. We evaluated how thinning affected the dynamics of gypsy moth populations by experimentally...

  1. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  2. Analyzing Investments in Thin-Kerf Saws

    Treesearch

    Philip H. Steele; Philip A. Araman

    1996-01-01

    The rising cost of hardwood sawlogs has increasd sawmill managers' interest in considering the installation of thin-kerf sawing machines in their sawmills. Replacement of circular headrigs by band headrigs and/or reducing resaw kerfs are the available options. Equipment replacement or modification to achieve thin-kerf sawing will require an investment. Sawmill...

  3. Thin disk lasers: history and prospects

    NASA Astrophysics Data System (ADS)

    Speiser, Jochen

    2016-04-01

    During the early 1990s, collaboration between the German Aerospace Center and the University of Stuttgart started to work on the Thin Disk concept. The core idea behind the thin disk design is the use of a thin, disk-shaped active medium that is cooled through one of the flat faces of the disk. This ensures a large surface-to-volume ratio and therefore provides very efficient thermal management. Today, the thin disk concept is used in various commercial lasers - ranging from compact, efficient low power systems to multi-kW lasers, including cw lasers and also pulsed (femtosecond to nanosecond) oscillators and amplifiers. The whole development of the Thin Disk laser was and will be accompanied by numerical modeling and optimization of the thermal and thermo-mechanic behavior of the disk and also the heat sink structure, mostly based on finite element models. For further increasing the energy and efficiency of pulsed Thin Disk lasers, the effects of amplified spontaneous emission (ASE) are a core issue. Actual efforts are oriented towards short pulse and ultra-short pulse amplifiers with (multi-)kW average power or Joule-class Thin Disk amplifiers, but also on new designs for cw thin disk MOPA designs.

  4. Trend Analysis of Controlled Thin Metallization Flashover

    DTIC Science & Technology

    2005-06-01

    TREND ANALYSIS OF CONTROLLED THIN METALLIZATION FLASHOVER S.O. Olabisi, K. M. Burke, W. J. Sarjeant Energy Systems Institute, University at...Abstract Tests validating the consistency and repeatability of controlled electrical surface flashover on metallized thin film insulators...were performed. The study of electrical surface flashover has been mainly confined to its prevention under various contaminated conditions such as

  5. Thinning even-aged, upland oak stands

    Treesearch

    Donald E. Hilt; Martin E. Dale

    1989-01-01

    Thinning produces bigger and better trees faster. Thinning removes poor quality trees and concentrates growth on the best. Total wood production increases because trees that would otherwise die from competition are harvested. Rotation ages for sawtimber can be shortened as much as 20 years. Or, we can grow bigger, more valuable trees using the same rotation age as an...

  6. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  7. Recent advances in thin-layer chromatography

    SciTech Connect

    Dallas, F.A.A.; Read, H.; Ruane, R.J.; Wilson, I.D.

    1988-01-01

    This book is a collection of proceedings from the 1987 Chromatographic Society International Symposium on Thin-Layer Chromatography in Brighton. The book is divided into four sections: Instrumentation, Radio-Thin-Layer Chromatography, Sorbents and Modifiers, and Applications. References date from the 1970s to the mid-1980s. Compounds and subject indexes are included.

  8. Thin CVD Coating Protects Titanium Aluminide Alloys

    NASA Technical Reports Server (NTRS)

    Clark, Ronald; Wallace, Terryl; Cunnington, George; Robinson, John

    1994-01-01

    Feasibility of using very thin CVD coatings to provide both protection against oxidation and surfaces of low catalytic activity for thin metallic heat-shield materials demonstrated. Use of aluminum in compositions increases emittances of coatings and reduces transport of oxygen through coatings to substrates. Coatings light in weight and applied to foil-gauge materials with minimum weight penalties.

  9. Applications of Thin Films in Electronics,

    DTIC Science & Technology

    The authors review the application of thin films produced by vacuum vaporization, cathode sputtering, diffusion, and epitaxial growing in the fields...of passive and active electric components and microminiaturization. Some of the most important characteristics of thin films are summarized. (Author)

  10. Application of Thin Films in Electronics,

    DTIC Science & Technology

    The article reviews the application of thin films (produced by vacuum evaporation, cathode sputtering, diffusion and epitaxial growing) in the field...of passive and active electric components and in microminiaturization. Some of the characteristics of thin films are summarized. (Author)

  11. Profitability of precommercially thinning oak stump sprouts

    Treesearch

    John P. Dwyer; Daniel C. Dey; William B. Kurtz

    1993-01-01

    Thinning oak stump sprouts to a single stem at an early age will increase diameter growth of the released stem. However, precommercial thinning represents a substantial investment which must be carried for many years before any returns are realized. We estimated the incremental gains in yield and the present net worth for five crop-tree release treatments of 5-year-old...

  12. Cut Costs with Thin Client Computing.

    ERIC Educational Resources Information Center

    Hartley, Patrick H.

    2001-01-01

    Discusses how school districts can considerably increase the number of administrative computers in their districts without a corresponding increase in costs by using the "Thin Client" component of the Total Cost of Ownership (TCC) model. TCC and Thin Client are described, including its software and hardware components. An example of a…

  13. Physics of thin films. Volume 13

    SciTech Connect

    Vossen, J.L.; Francombe, M.H.

    1987-01-01

    This volume of Physics of Thin Films contains five articles, four of which deal primarily with the influence of ions or of optical energy on the deposition, properties, or etching of thin films. The fifth article deals with the important technological problem of contacts to GaAs devices.

  14. Thin CVD Coating Protects Titanium Aluminide Alloys

    NASA Technical Reports Server (NTRS)

    Clark, Ronald; Wallace, Terryl; Cunnington, George; Robinson, John

    1994-01-01

    Feasibility of using very thin CVD coatings to provide both protection against oxidation and surfaces of low catalytic activity for thin metallic heat-shield materials demonstrated. Use of aluminum in compositions increases emittances of coatings and reduces transport of oxygen through coatings to substrates. Coatings light in weight and applied to foil-gauge materials with minimum weight penalties.

  15. Profitability of Precommericially Thinning Oak Stump Sprouts

    Treesearch

    John P. Dwyer; Daniel C. Dey; William B. Kurtz

    1993-01-01

    Thinning oak stump sprouts to a single stem at an early age will increase diameter growth of the released stem. However, percommercial thinning represents a substantial investment which must be carried for many years before any returns are realized. We estimated the incremental gains in yield and the present net worth for five crop-tree release treatments of 5-yr-old...

  16. Cut Costs with Thin Client Computing.

    ERIC Educational Resources Information Center

    Hartley, Patrick H.

    2001-01-01

    Discusses how school districts can considerably increase the number of administrative computers in their districts without a corresponding increase in costs by using the "Thin Client" component of the Total Cost of Ownership (TCC) model. TCC and Thin Client are described, including its software and hardware components. An example of a…

  17. Fundamentals of thin layer chromatography

    SciTech Connect

    Geiss, F.

    1987-01-01

    This comprehensive book on the theory and practice of thin-layer chromatography (TLC) is largely translated from the German original. The text contains a number of appendices, including a list of key equations, a short glossary of terms, and a list of symbols and acronyms. It also contains a list of figures that is perhaps a trifle superfluous. The book lists 299 references and has a four-page subject index. The index may be a little small for a book of nearly 500 pages. This book is a valuable addition to the texts on TLC. It is recommended to those with good mathematics backgrounds and, in particular, to those interested in chromatography theory. It will also be useful to those who employ TLC as an aid in solvent choice for LC.

  18. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  19. Tunneling in thin MOS structures

    NASA Technical Reports Server (NTRS)

    Maserjian, J.

    1974-01-01

    Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

  20. BDS thin film damage competition

    SciTech Connect

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  1. Wrinkle motifs in thin films

    PubMed Central

    Budrikis, Zoe; Sellerio, Alessandro L.; Bertalan, Zsolt; Zapperi, Stefano

    2015-01-01

    On length scales from nanometres to metres, partial adhesion of thin films with substrates generates a fascinating variety of patterns, such as ‘telephone cord’ buckles, wrinkles, and labyrinth domains. Although these patterns are part of everyday experience and are important in industry, they are not completely understood. Here, we report simulation studies of a previously-overlooked phenomenon in which pairs of wrinkles form avoiding pairs, focusing on the case of graphene over patterned substrates. By nucleating and growing wrinkles in a controlled way, we characterize how their morphology is determined by stress fields in the sheet and friction with the substrate. Our simulations uncover the generic behaviour of avoiding wrinkle pairs that should be valid at all scales. PMID:25758174

  2. Thermopower of thin iron films

    NASA Astrophysics Data System (ADS)

    Schepis, Randy; Schröder, Klaus

    1992-02-01

    Thin iron films were prepared by evaporation in a high vacuum system (pressure in the 10 -5 MPa range). The thermopower was measured in situ near room temperature as a function of film thickness. Iron films with rather high resistivity values showed a strong thickness effect of the Seeback coefficient, S, with the difference between S (bulk) and S (film) reaching values of up to (19±3) μV/K for a sample 5 nm thick. The difference between S (bulk) and S (film) decreased with increasing d values. However, a sample with a resistance value of 50 μΩ cm at d = 5 n had an S value which differed by less than 3 μV/K from S (bulk).

  3. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  4. Longwall mining of thin seams

    SciTech Connect

    Curth, E A

    1981-01-01

    Thin seam operations pose a challenge to the ingenuity of mining engineers to overcome the factor of human inconvenience in the restricted environment and associated high cost production. Surprisingly, low seam longwalls in the Federal Republic of Germany in an average thickness of 35 in. and dipping less than 18/sup 0/ come close to achieving the average production rate of all German longwall operations. They are all plow faces, and a consistent production of 3300 tons per day and a productivity of 40 tons per man shift are reported from one of the thin seam longwalls. These results were attained by reliable high-capacity equipment and roof support by shields that can be collapsed to as low as 22 inches. Maximum mining height for plow operated faces lies at 31.5 inches. Technology for mechanized mining of flat lying coalbeds less than 31.5 inches in thickness without rock cutting is not available, and firmness of coal, undulation of the strata, coalbed thickness variation, and the necessity of cutting rock, particularly through faults, set limits to plow application. The in-web shearer can be used in firm coal to a minimum mining height of 40 inches, and a daily production of 1650 to 2200 tons is reported from a longwall in the Saar district of Germany equipped with such a shearer and shields. Numerous in-web shearers are employed in the United Kingdom; reports as to their success are contradictory. Also, experience in the United States, though limited, has been negative. The steady increase in output from single drum shearer faces in Pennsylvania is a remarkable achievement, and occasional record breaking peaks in production indicate the potential of such mining. Technology development for the future is discussed.

  5. Magnetostrictive thin films for microwave spintronics

    PubMed Central

    Parkes, D. E.; Shelford, L. R.; Wadley, P.; Holý, V.; Wang, M.; Hindmarch, A. T.; van der Laan, G.; Campion, R. P.; Edmonds, K. W.; Cavill, S. A.; Rushforth, A. W.

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. PMID:23860685

  6. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K.; Wei, G.; Yu, P.C.

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  7. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. . Electro-Optics Technology Center); Wei, G. ); Yu, P.C. )

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  8. Magnetostrictive thin films for microwave spintronics.

    PubMed

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  9. Preparation and Characterization of PZT Thin Films

    SciTech Connect

    Bose, A.; Sreemany, M.; Bhattacharyya, D. K.; Sen, Suchitra; Halder, S. K.

    2008-07-29

    In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< {mu}m in thickness) for low voltage operation at {<=}10 V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80-150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Corning glass 1737 using a seed layer of TiO{sub x} (TiO{sub x} thickness ranging between 30 nm to 500 nm)

  10. Mutation-Specific Effects on Thin Filament Length in Thin Filament Myopathy

    PubMed Central

    de Winter, Josine M.; Joureau, Barbara; Lee, Eun-Jeong; Kiss, Balázs; Yuen, Michaela; Gupta, Vandana A.; Pappas, Christopher T.; Gregorio, Carol C.; Stienen, Ger J. M.; Edvardson, Simon; Wallgren-Pettersson, Carina; Lehtokari, Vilma-Lotta; Pelin, Katarina; Malfatti, Edoardo; Romero, Norma B.; van Engelen, Baziel G.; Voermans, Nicol C.; Donkervoort, Sandra; Bönnemann, C. G.; Clarke, Nigel F.; Beggs, Alan H.; Granzier, Henk; Ottenheijm, Coen A. C.

    2016-01-01

    Objective Thin filament myopathies are among the most common nondystrophic congenital muscular disorders, and are caused by mutations in genes encoding proteins that are associated with the skeletal muscle thin filament. Mechanisms underlying muscle weakness are poorly understood, but might involve the length of the thin filament, an important determinant of force generation. Methods We investigated the sarcomere length-dependence of force, a functional assay that provides insights into the contractile strength of muscle fibers as well as the length of the thin filaments, in muscle fibers from 51 patients with thin filament myopathy caused by mutations in NEB, ACTA1, TPM2, TPM3, TNNT1, KBTBD13, KLHL40, and KLHL41. Results Lower force generation was observed in muscle fibers from patients of all genotypes. In a subset of patients who harbor mutations in NEB and ACTA1, the lower force was associated with downward shifted force–sarcomere length relations, indicative of shorter thin filaments. Confocal microscopy confirmed shorter thin filaments in muscle fibers of these patients. A conditional Neb knockout mouse model, which recapitulates thin filament myopathy, revealed a compensatory mechanism; the lower force generation that was associated with shorter thin filaments was compensated for by increasing the number of sarcomeres in series. This allowed muscle fibers to operate at a shorter sarcomere length and maintain optimal thin–thick filament overlap. Interpretation These findings might provide a novel direction for the development of therapeutic strategies for thin filament myopathy patients with shortened thin filament lengths. PMID:27074222

  11. Optimization of CdS Buffer Layer for High Efficiency CIGS Solar Cells.

    PubMed

    Kim, Donguk; Jang, Yong-Jun; Jung, Ho-Sung; Kim, Minha; Baek, Dohyun; Yi, Junsin; Lee, Jaehyeong; Choi, Youngkwan

    2016-05-01

    In present work, effects of the thickness on the structural and optical properties of chemically deposited CdS thin films were investigated. In addition, we fabricated Cu(In, Ga)Se2 solar cells with various thicknesses of CdS buffer layer and optimized the thickness for a high efficiency. When the CdS thin films were thicker, the crystallinity improved but the transmittance decreased. The short-circuit current density (J(sc)) and the fill factor are the major efficiency limiting factors for the CIGS solar cells. As the thickness of the CdS buffer layer, the open-circuit voltage (V(oc)) and the fill factor increased, whereas the J(sc) slightly decreased. The improvement of the fill factor and thus efficiency resulted from larger shunt resistance. For the solar cells without a high resistive intrinsic ZnO layer, the highest efficiency was acquired at the thickness of 89 nm. With further increasing the thickness, the J(sc) decreased significantly, resulting in poor efficiency.

  12. Fillability of Thin-Wall Steel Castings

    SciTech Connect

    Robert C. Voigt; Joseph Bertoletti; Andrew Kaley; Sandi Ricotta; Travis Sunday

    2002-07-30

    The use of steel components is being challenged by lighter nonferrous or cast iron components. The development of techniques for enhancing and ensuring the filability of thin-wall mold cavities is most critical for thinner wall cast steel production. The purpose of this research was to develop thin-wall casting techniques that can be used to reliably produce thin-wall castings from traditional gravity poured sand casting processes. The focus of the research was to enhance the filling behavior to prevent misrunds. Experiments were conducted to investigate the influence of various foundry variables on the filling of thin section steel castings. These variables include casting design, heat transfer, gating design, and metal fluidity. Wall thickness and pouring temperature have the greatest effect on casting fill. As wall thickness increases the volume to surface area of the casting increases, which increases the solidification time, allowing the metal to flow further in thicker sect ions. Pouring time is another significant variable affecting casting fill. Increases or decreases of 20% in the pouring time were found to have a significant effect on the filling of thin-wall production castings. Gating variables, including venting, pouring head height, and mold tilting also significantly affected thin-wall casting fill. Filters offer less turbulent, steadier flow, which is appropriate for thicker castings, but they do not enhance thin-wall casting fill.

  13. Instrument platforms for thin-layer chromatography.

    PubMed

    Bernard-Savary, Pierre; Poole, Colin F

    2015-11-20

    High performance column and thin-layer chromatography are both instrumental techniques but differ in that column chromatography requires a fully integrated instrument platform with high pressure capability while for thin-layer chromatography separate devices are used for each unit operation, usually at or close to atmospheric pressure, and afford higher flexibility supporting on-line or off-line operation. The unit operations of thin-layer chromatography are defined as sample application, development and evaluation with derivatization as an optional step. The diversity of equipment for each operation contributes to the flexibility of analysis by thin-layer chromatography and supports manual, semi-automated or full-automation of the separation process. Instrument platforms are more than a convenience as they affect performance, repeatability, sample detectability, and time management. The current trend in thin-layer chromatography is to make the unit operations independent of the user so that analysts can perform other tasks while each step is performed. In addition, in thin-layer chromatography it is general practice to separate several samples simultaneously, and instrument platforms are required to accommodate this feature. In this article, we review contemporary instrumentation employed in thin-layer chromatography for sample application, development, derivatization, photodocumentation, densitometric evaluation, and hyphenation with spectroscopic detectors with an emphasis on the variety and performance of commercially available systems. Some suggestions for best practices and avoidance of common mistakes are included. Copyright © 2015 Elsevier B.V. All rights reserved.

  14. Near-field optical thin microcavity theory

    NASA Astrophysics Data System (ADS)

    Wu, Jiu Hui; Hou, Jiejie

    2016-01-01

    The thin microcavity theory for near-field optics is proposed in this study. By applying the power flow theorem and the variable theorem,the bi-harmonic differential governing equation for electromagnetic field of a three-dimensional thin microcavity is derived for the first time. Then by using the Hankel transform, this governing equation is solved exactly and all the electromagnetic components inside and outside the microcavity can be obtained accurately. According to the above theory, the near-field optical diffraction from a subwavelength aperture embedded in a thin conducting film is investigated, and numerical computations are performed to illustrate the edge effect by an enhancement factor of 1.8 and the depolarization phenomenon of the near-field transmission in terms of the distance from the film surface. This thin microcavity theory is verified by the good agreement between our results and those in the previous literatures. The thin microcavity theory presented in the study should be useful in the possible applications of the thin microcavities in near-field optics and thin-film optics.

  15. Raman spectroscopy of thin films

    NASA Astrophysics Data System (ADS)

    Burgess, James Shaw

    Raman spectroscopy was used in conjunction with x-ray diffraction and x-ray photoelectron spectroscopy to elucidate structural and compositional information on a variety of samples. Raman was used on the unique La 2NiMnO6 mixed double perovskite which is a member of the LaMnO3 family of perovskites and has multiferroic properties. Raman was also used on nanodiamond films as well as some boron-doped carbon compounds. Finally, Raman was used to identify metal-dendrimer bonds that have previously been overlooked. Vibrational modes for La2NiMnO6 were ascribed by comparing spectra with that for LaMnO3 bulk and thin film spectra. The two most prominent modes were labeled as an asymmetric stretch (A g) centered around 535 cm-1 and a symmetric stretch (B g) centered around 678 cm. The heteroepitaxial quality of La2NiMnO 6 films on SrTiO3 (100) and LaAlO3 (100) substrates were examined using the Raman microscope by way of depth profile experiments and by varying the thickness of the films. It was found that thin films (10 nm) had much greater strain on the LaAlO3 substrate than on the SrTiO3 substrate by examining the shifts of the Ag and the Bg modes from their bulk positions. Changes in the unit cell owing to the presence of oxygen defects were also monitored using Raman spectroscopy. It was found that the Ag and Bg modes shifted between samples formed with different oxygen partial pressures. These shifts could be correlated to changes in the symmetry of the manganese centers due to oxygen defects. Raman spectroscopy was used to examine the structural and compositional characteristics of carbon materials. Nanocrystalline diamond coated cutting tools were examined using the Raman Microscope. Impact, abrasion, and depth profile experiments indicated that delamination was the primary cause of film failure in these systems. Boron doped material of interest as catalyst supports were also examined. Monitoring of the G-mode and intensities of the D- and G-modes indicated that

  16. Macro stress mapping on thin film buckling

    SciTech Connect

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  17. Thin film evaporator recovers used oil

    SciTech Connect

    Booth, G. III

    1983-01-01

    This article is an evaluation of a thin film evaporator which is used to distill the lube oil fraction from depleted additives and other residues in the crankcase oil re-refining process at Booth Oil. Operating as a vacuum distillation unit, the thin film evaporator produces a lube oil base stock equivalent in quality, after post-treatment, to virgin base stock. The thin film evaporator recovers about 70 to 90% of used oil as lube oil distillate, depending on the quantity of non-volatile residue in the feed.

  18. Weld Repair of Thin Aluminum Sheet

    NASA Technical Reports Server (NTRS)

    Beuyukian, C. S.; Mitchell, M. J.

    1986-01-01

    Weld repairing of thin aluminum sheets now possible, using niobium shield and copper heat sinks. Refractory niobium shield protects aluminum adjacent to hole, while copper heat sinks help conduct heat away from repair site. Technique limits tungsten/inert-gas (TIG) welding bombardment zone to melt area, leaving surrounding areas around weld unaffected. Used successfully to repair aluminum cold plates on Space Shuttle, Commercial applications, especially in sealing fractures, dents, and holes in thin aluminum face sheets or clad brazing sheet in cold plates, heat exchangers, coolers, and Solar panels. While particularly suited to thin aluminum sheet, this process also used in thicker aluminum material to prevent surface damage near weld area.

  19. Surface roughness evolution of nanocomposite thin films

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; Hosson, J. Th. M. de

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growing interface is explained by ballistic effects resulting from impingements of ions to the growing thin film. These ballistic effects are sensitive to the flux and energy of impinging ions. The predictions of the model are compared with experimental data, and it is concluded that the thin film roughness can be further controlled by adjusting waveform, frequency, and width of dc pulses.

  20. Density inhomogeneity in ferroelectric thin films

    NASA Astrophysics Data System (ADS)

    Cao, Jiang-Li; Solbach, Axel; Klemradt, Uwe; Weirich, Thomas; Mayer, Joachim; Böttger, Ulrich; Schorn, Peter J.; Waser, Rainer

    2006-07-01

    Structural investigations of Pb(Zr ,Ti)O3 (PZT) ferroelectric thin films derived by chemical solution deposition on Pt /TiOx electrode stacks were performed using grazing incidence x-ray specular reflectivity of synchrotron radiation and transmission electron microscopy. A density inhomogeneity, i.e., a sublayer structure, in the PZT thin films was observed; the upper PZT sublayer had a lower density and the lower sublayer had a higher density. The influence of the density inhomogeneity, as a possible extrinsic contribution to size effects in ferroelectric thin films, was discussed.