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Sample records for cuin gase2 thin

  1. Structure, morphology and properties of thinned Cu(In, Ga)Se2 films and solar cells

    NASA Astrophysics Data System (ADS)

    Han, Anjun; Zhang, Yi; Song, Wei; Li, Boyan; Liu, Wei; Sun, Yun

    2012-03-01

    Cu(In, Ga)Se2 (CIGS) thin films with different thicknesses were deposited by the three-stage coevaporation process at a constant substrate temperature. The structure, morphology and optical and electrical properties of films and solar cell performance were studied. It was found that the degree of (1 1 2) preferred orientation becomes strong with reducing thickness. Owing to the reaction of Cu2-xSe with In and Ga supplied in the third stage, a lot of cavities existed in the upper part of the films which were thicker than 1 µm. On reducing the thickness, the band gap increased a little and the absorption coefficient decreased in the region of low photon energies. However, thinning the CIGS film had little influence on the electrical properties of the films which were thinner than 1.2 µm. The solar cells with thinned absorber layers disclosed that there were no thickness-related losses unless the CIGS absorber was thinner than 1 µm. The efficiency of the solar cell with a thickness of 1.26 µm was 13.21%, while it was only 9.28% for the absorber of 0.57 µm in this study, and the reasons are discussed.

  2. Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications

    NASA Astrophysics Data System (ADS)

    Li, Z. Q.; Liu, Q. Q.; Li, J. J.; Sun, Z.; Chen, Y. W.; Yang, Z.; Huang, S. M.

    2012-02-01

    Cu(In, Ga)Se 2 (CIGS) surface was modified with Zn doping using a magnetron sputtering method. CuInGa:Zn precursor films targeting a CuIn 0.7Ga 0.3Se 2 stoichiometry with increasing Zn content from 0 to 0.8 at% were prepared onto Mo-coated glass substrates via co-sputtering of Cu-Ga alloy, In and Zn targets. The CuInGa:Zn precursors were then selenized with solid Se pellets. The structures and morphologies of grown Zn doped CIGS films were found to depend on the Zn content. At zinc doping level ranging between 0.2 and 0.6 at%, the Zn doping improved the crystallinity and surface morphology of CIGS films. Compared with the performance of the non-doped CIGS cell, the fabricated CIGS solar cell displayed a relative efficiency enhancement of 9-22% and the maximum enhancement was obtained at a Zn content of 0.4 at%.

  3. Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In, Ga)Se2 thin-film solar cells

    NASA Astrophysics Data System (ADS)

    Lu, Ming; Xu, Jing; Huang, Jian-Wei

    2016-09-01

    The lowest energies which make Cu, In, Ga, and Se atoms composing Cu(In, Ga)Se2 (CIGS) material displaced from their lattice sites are evaluated, respectively. The non-ionizing energy loss (NIEL) for electron in CIGS material is calculated analytically using the Mott differential cross section. The relation of the introduction rate (k) of the recombination centers to NIEL is modified, then the values of k at different electron energies are calculated. Degradation modeling of CIGS thin-film solar cells irradiated with various-energy electrons is performed according to the characterization of solar cells and the recombination centers. The validity of the modeling approach is verified by comparison with the experimental data. Project supported by the National Natural Science Foundation of China (Grant No. 11547151).

  4. Dielectric function of Cu(In, Ga)Se2-based polycrystalline materials

    NASA Astrophysics Data System (ADS)

    Minoura, Shota; Kodera, Keita; Maekawa, Takuji; Miyazaki, Kenichi; Niki, Shigeru; Fujiwara, Hiroyuki

    2013-02-01

    The dielectric functions of Cu(In, Ga)Se2(CIGS)-based polycrystalline layers with different Ga and Cu compositions have been determined by applying spectroscopic ellipsometry (SE) in a wide energy range of 0.7-6.5 eV. To suppress SE analysis errors induced by rough surface and compositional fluctuation, quite thin CIGS layers (<60 nm) with high uniformity toward the growth direction have been characterized using a self-consistent SE analysis method. We find that the optical model used in many previous studies is oversimplified particularly for the roughness/overlayer contribution, and all the artifacts arising from the simplified analysis have been removed almost completely in our approach. The CIGS dielectric functions with the variation of the Ga composition [x = Ga/(In + Ga)] revealed that (i) the whole CIGS dielectric function shifts toward higher energies with x, (ii) the band gap increases linearly with x without the band-gap bowing effect, and (iii) the overall absorption coefficients are significantly smaller than those reported earlier. Furthermore, the reduction of the Cu composition [y = Cu/(In + Ga)] leads to (i) the linear increase in the band-edge transition energy and (ii) the decrease in the absorption coefficient, due to the smaller interaction of the Cu 3d orbitals near the valence band maximum in the Cu-deficient layers. When y > 1, on the other hand, the free-carrier absorption increases drastically due to the formation of a semi-metallic CuxSe phase with a constant band gap in the CIGS component. In this study, by using a standard critical-point line-shape analysis, the critical point energies of the CIGS-based layers with different Ga and Cu compositions have been determined. Based on these results, we will discuss the optical transitions in CIGS-based polycrystalline materials.

  5. Substrate temperature optimization for Cu(In, Ga)Se2 solar cells on flexible stainless steels

    NASA Astrophysics Data System (ADS)

    Liang, X.; Zhu, H.; Chen, J.; Zhou, D.; Zhang, C.; Guo, Y.; Niu, X.; Li, Z.; Mai, Y.

    2016-04-01

    Cu(In, Ga)Se2 (CIGS) thin films are deposited on flexible stainless steel (SS) substrates using the so called 3-stage co-evaporation process at different substrate temperatures ranging from 440 °C to 640 °C during the 2nd stage and the 3rd stage (TS2). The effects of TS2 on the properties of CIGS thin films are systematically investigated. It is found by secondary ion mass spectrometry measurement that CIGS thin films deposited at different TS2 show different Ga/(Ga + In) ratio (GGI) profiles along the growth direction. High TS2 facilitates the grain growth and leads to larger grain size. However, high TS2 worsens the spectral response of CIGS solar cells in the long wavelength range, which is partly attributed to the too much iron atom diffusion from the SS substrates into the CIGS thin films. All CIGS thin films show (112) preferred orientations with a shift to higher angle due to variation of compositions. A shoulder-like two-peak structure of (112) and (220/204) peaks appears for CIGS thin films deposited at lower TS2. Conversion efficiency of 11.3% is obtained for CIGS thin film solar cells deposited at the TS2 of 500 °C.

  6. Detection of Matrix Elements and Trace Impurities in Cu(In, Ga)Se2 Photovoltaic Absorbers Using Surface Analytical Techniques.

    PubMed

    Kim, Min Jung; Lee, Jihye; Kim, Seon Hee; Kim, Haidong; Lee, Kang-Bong; Lee, Yeonhee

    2015-10-01

    Chalcopyrite Cu(In, Ga)Se2 (CIGS) thin films are well known as the next-generation solar cell materials notable for their high absorption coefficient for solar radiation, suitable band gap, and ability for deposition on flexible substrate materials, allowing the production of highly flexible and lightweight solar panels. To improve solar cell performances, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is much needed. In this study, Cu(In, Ga)Se2 thin films were prepared on molybdenum back contacts deposited on soda-lime glass substrates via three-stage evaporation. Surface analyses via AES and SIMS were used to characterize the CIGS thin films and compare their depth profiles. We determined the average concentration of the matrix elements, Cu, In, Ga, and Se, using ICP-AES, XRF, and EPMA. We also obtained depth profiling results using TOF-SIMS, magnetic sector SIMS and AES, and APT, a sub-nanometer resolution characterization technique that enables three-dimensional elemental mapping. The SIMS technique, with its high detection limit and ability to obtain the profiles of elements in parallel, is a powerful tool for monitoring trace elements in CIGS thin films. To identify impurities in a CIGS layer, the distribution of trace elements was also observed according to depth by SIMS and APT.

  7. Detection of Matrix Elements and Trace Impurities in Cu(In, Ga)Se2 Photovoltaic Absorbers Using Surface Analytical Techniques.

    PubMed

    Kim, Min Jung; Lee, Jihye; Kim, Seon Hee; Kim, Haidong; Lee, Kang-Bong; Lee, Yeonhee

    2015-10-01

    Chalcopyrite Cu(In, Ga)Se2 (CIGS) thin films are well known as the next-generation solar cell materials notable for their high absorption coefficient for solar radiation, suitable band gap, and ability for deposition on flexible substrate materials, allowing the production of highly flexible and lightweight solar panels. To improve solar cell performances, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is much needed. In this study, Cu(In, Ga)Se2 thin films were prepared on molybdenum back contacts deposited on soda-lime glass substrates via three-stage evaporation. Surface analyses via AES and SIMS were used to characterize the CIGS thin films and compare their depth profiles. We determined the average concentration of the matrix elements, Cu, In, Ga, and Se, using ICP-AES, XRF, and EPMA. We also obtained depth profiling results using TOF-SIMS, magnetic sector SIMS and AES, and APT, a sub-nanometer resolution characterization technique that enables three-dimensional elemental mapping. The SIMS technique, with its high detection limit and ability to obtain the profiles of elements in parallel, is a powerful tool for monitoring trace elements in CIGS thin films. To identify impurities in a CIGS layer, the distribution of trace elements was also observed according to depth by SIMS and APT. PMID:26726401

  8. Optical constants of Cu(In, Ga)Se2 for arbitrary Cu and Ga compositions

    NASA Astrophysics Data System (ADS)

    Minoura, Shota; Maekawa, Takuji; Kodera, Keita; Nakane, Akihiro; Niki, Shigeru; Fujiwara, Hiroyuki

    2015-05-01

    The optical constants of Cu(In, Ga)Se2 (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

  9. Ga content and thickness inhomogeneity effects on Cu(In, Ga)Se2 solar modules

    NASA Astrophysics Data System (ADS)

    Zhu, Xiaobo; Cheng, Tzu-Huan; Liu, Chee Wee

    2016-07-01

    The fluctuation of Ga content and absorption layer thickness of Cu(In, Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numerical simulation. The band gap of CIGS is increased by the increasing Ga content, and the residual compressive strain. Strain effect worsens the degradation of the power conversion efficiency of CIGS module in addition to Ga fluctuation. The intracell Ga fluctuation degrades the open circuit voltage due to the minimum open circuit voltage in the parallel configuration, and also affects the short circuit current due to the Ga-dependent light absorption. The intercell Ga fluctuation leads to a more significant degradation for CIGS solar module efficiency than the intracell Ga fluctuation due to the additional degradation of the fill factor. The thickness fluctuation has a small effect on open circuit voltage, but causes strong degradation of short circuit current and fill factor, which leads to a more significant degradation on power conversion efficiency than Ga fluctuation to the same fluctuation percentage. In reality, the thickness can be tightly controlled within the fluctuation of 5% or less. [Figure not available: see fulltext.

  10. Na incorporation into Cu(In ,Ga)Se2 for high-efficiency flexible solar cells on polymer foils

    NASA Astrophysics Data System (ADS)

    Rudmann, D.; Brémaud, D.; Zogg, H.; Tiwari, A. N.

    2005-04-01

    Incorporation of a small amount of sodium into Cu(In ,Ga)Se2 (CIGS) absorbers for thin-film solar cells is well known to enhance conversion efficiencies. Usually, Na is added in a way such that it is present during CIGS growth and therewith influences the growth kinetics. We have used post-deposition Na in-diffusion into as-grown, Na-free absorbers and observed typical efficiency improvements. This suggests that in general the main positive Na effect originates from changes in the electronic absorber properties rather than from modification of CIGS growth kinetics. At low substrate temperatures, Na impedes CIGS phase formation. This may explain why absorbers grown at substrate temperatures below 450°C in the presence of Na yield inferior cells compared with post-deposition-treated CIGS. We have developed post-deposition Na incorporation for the processing of flexible CIGS solar cells on polyimide substrates. A conversion efficiency of 14.1% under AM1.5 standard test conditions was independently measured. This represents the highest reported efficiency of any solar cell grown on a polymer substrate to date.

  11. Improvement of Pre-Annealed Cu(In, Ga)Se2 Absorbers for High Efficiency.

    PubMed

    Youn, Sung-Min; Kim, Jin-Hyeok; Jeong, Chaehwan

    2016-05-01

    We used a DC-sputtering method to deposit the precursor (Cu3Ga/In) onto Mo with 1 um thick/soda-lime glass (SLG). We moved it onto a graphite crucible for the pre-annealing process, and the pressure of the process tube was about 10 torr without Ar gas flow. The crucible in quartz tube was heated by halogen lamp to 250 degrees C for 30 min, and then raised to 550 degrees C for 10 min under a selenium atmosphere. To complete the solar cells, a buffer layer of 50 nm CdS was then deposited by chemical bath deposition (CBD), followed by a double layer (high resistivity/low resistivity) of RF sputtered i-ZnO/Al-ZnO thin films. The Al front contacts were deposited by thermal evaporator. PMID:27483860

  12. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy.

    PubMed

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-01-01

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells. PMID:26679958

  13. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy

    NASA Astrophysics Data System (ADS)

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-12-01

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.

  14. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy.

    PubMed

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-12-18

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells.

  15. In-Situ Probing Plasmonic Energy Transfer in Cu(In, Ga)Se2 Solar Cells by Ultrabroadband Femtosecond Pump-Probe Spectroscopy

    PubMed Central

    Chen, Shih-Chen; Wu, Kaung-Hsiung; Li, Jia-Xing; Yabushita, Atsushi; Tang, Shih-Han; Luo, Chih Wei; Juang, Jenh-Yih; Kuo, Hao-Chung; Chueh, Yu-Lun

    2015-01-01

    In this work, we demonstrated a viable experimental scheme for in-situ probing the effects of Au nanoparticles (NPs) incorporation on plasmonic energy transfer in Cu(In, Ga)Se2 (CIGS) solar cells by elaborately analyzing the lifetimes and zero moment for hot carrier relaxation with ultrabroadband femtosecond pump-probe spectroscopy. The signals of enhanced photobleach (PB) and waned photoinduced absorption (PIA) attributable to surface plasmon resonance (SPR) of Au NPs were in-situ probed in transient differential absorption spectra. The results suggested that substantial carriers can be excited from ground state to lower excitation energy levels, which can reach thermalization much faster with the existence of SPR. Thus, direct electron transfer (DET) could be implemented to enhance the photocurrent of CIGS solar cells. Furthermore, based on the extracted hot carrier lifetimes, it was confirmed that the improved electrical transport might have been resulted primarily from the reduction in the surface recombination of photoinduced carriers through enhanced local electromagnetic field (LEMF). Finally, theoretical calculation for resonant energy transfer (RET)-induced enhancement in the probability of exciting electron-hole pairs was conducted and the results agreed well with the enhanced PB peak of transient differential absorption in plasmonic CIGS film. These results indicate that plasmonic energy transfer is a viable approach to boost high-efficiency CIGS solar cells. PMID:26679958

  16. Experimental and theoretical investigations of cadmium diffusion in vacancy-rich Cu(In, Ga)Se2 material

    NASA Astrophysics Data System (ADS)

    Biderman, Norbert J.

    Copper indium gallium selenide (Cu(In,Ga)Se2 or CIGS) has become a significant topic of research and development for photovoltaic application. CIGS photovoltaic devices have demonstrated record conversion efficiencies however are still below the maximum solar conversion efficiency. Losses in performance have been attributed structural defects including vacancies, doping, grain boundaries, and compositional non-uniformity that are poorly understood and controlled. The cadmium sulfide (CdS) buffer layer plays a critical role in high-performance CIGS photovoltaic devices, serving as the n-type component of the p-n junction formed with the p-type CIGS absorber layer. Cadmium diffusion into the CIGS surface during CdS deposition creates a buried p-n homojunction in addition to the CIGS/CdS p-n heterojunction. CdS is believed to assist in reducing carrier recombination at the CIGS/CdS interface, an important attribute of high-efficiency solar cells. In the present work, cadmium diffusion mechanisms in CIGS are experimentally investigated via secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES). Two cadmium diffusion profiles with distinct Arrhenius diffusion kinetics within a single depth profile of the CIGS thin film are observed with SIMS and AES: an intense first-stage diffusion profile directly below the CIGS/CdS interface and a long-range, second-stage diffusion profile that extends deep into the thin film. Cadmium grain boundary diffusion is also detected in fine-grain CIGS samples. These multiple diffusion processes are quantified in the present work, and the two-stage cadmium diffusion profiles suggest distinctive lattice diffusion mechanisms. Calculations and modeling of general impurity diffusion via interstitial sites in CIGS are also conducted via numerical including cadmium, iron, and zinc. In the numerical simulations, the standard diffusion-reaction kinetics theory is extended to vacancy-rich materials like CIGS that contain 1 at

  17. Effects of the CuS phase on the growth and properties of CuInS2 thin films

    NASA Astrophysics Data System (ADS)

    Liu, Xiaohui; Han, Anjun; Liu, Zhengxin; Sugiyama, Mutsumi

    2016-01-01

    CuInS2 thin films were prepared by sulfurization using a less hazardous liquid, metal-organic ditertiarybutylsulfide, on soda-lime glass substrates. Single-phase chalcopyrite CuInS2 films were obtained after 15 min at 515 °C. The obtained CuInS2 films were repeatedly sulfurized under different sulfurization conditions. The characteristics of these CuInS2 films were determined by X-ray diffraction (XRD) and photoluminescence (PL) spectra analyses. The secondary impurity phase such as CuS was confirmed from XRD patterns. The growth mechanism of intrinsic defects related to the secondary phase is discussed in this paper.

  18. Thin Film CuInS2 Prepared by Spray Pyrolysis with Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Cowen, Jonathan E.; Hepp, Aloysius F.; Lyons, Valerie (Technical Monitor)

    2002-01-01

    Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Omega x cm.

  19. Synthesis of nanostructured CuInS2 thin films and their application in dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Luo, Fazhi; Zhuang, Mixue; Liu, Zhen; Wei, Aixiang; Liu, Jun

    2016-03-01

    CuInS2 (CIS) nanostructure thin films were successfully synthesized on FTO conductive glass substrates by solvothermal method. It is found that the surface morphology and microstructure of CIS thin films can be tailored by simply adjusting the concentration of oxalic acid. CIS nanostructure films with texture of "nanosheet array" and "flower-like microsphere" were obtained and used as Pt-free counter electrode for dye-sensitized solar cells (DSSCs). The nanosheet array CIS was found to have a better electrocatalytic activity than the flower-like microsphere one. DSSCs based on nanosheet array CIS thin film counter electrode show conversion efficiency of 3.33 %, which is comparable to the Pt-catalyzed DSSCs. The easy synthesis, low cost, morphology tunable and excellent electrocatalytic property may make the CuInS2 nanostructure competitive as counter electrode in DSSCs.

  20. Influence of Ce doping on structural and photoelectric properties of CuInS2 thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Jun; Xiao, Lingling; Ding, Tiezhu; Wang, Yanlai; Fan, Yue

    2015-09-01

    Cerium doped CuInS2 thin films were successfully fabricated by a powder metallurgy method. X-ray diffraction and scanning electron microscope measurements showed that the as-prepared CuIn1-xCexS2 samples are of good crystallinity and crystallize with chalcopyrite structure when sintering at 550 °C. The presence of Ce3+ in host material was conformed by X-ray photoelectron spectroscopy. Two subband photon absorption peaks were observed at 1710 nm (0.73 eV) and 1955 nm (0.63 eV) in the UV-Vis-NIR absorption spectrum. This behavior could suggest that an intermediate band forms in the forbidden band of CuInS2 semiconductor due to cerium incorporation. The optical bandgap of CuIn1-xCexS2 films was tuned in the range of 1.38 eV to 1.23 eV with increasing cerium content. And the electrical conductivity could be improved if doped moderate cerium content, especially x = 0.1.

  1. Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.

    PubMed

    Sun, Qian; Kim, Kyoung-Bo; Jeon, Chan-Wook

    2016-05-01

    Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias.

  2. Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.

    PubMed

    Sun, Qian; Kim, Kyoung-Bo; Jeon, Chan-Wook

    2016-05-01

    Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias. PMID:27483870

  3. Investigation of thin film solar cells based on Cu2S and ternary compounds such as CuInS2

    NASA Technical Reports Server (NTRS)

    Loferski, J. J.

    1975-01-01

    Production and characterization in thin film form of Cu2S and related Cu compounds such as CuInS2 for photovoltaic cells are examined. The low cost process technology being reported, namely the sulfurization method, is capable of producing films on various substrates. Cathodoluminescence is being used as a diagnostic tool to identify Cu(x)S and CuInS2 compounds. Also, single crystals of CuInS2 are being prepared and it is contemplated that p-n junctions will be made in such crystals.

  4. CuInS 2 thin films obtained through the annealing of chemically deposited In 2S 3-CuS thin films

    NASA Astrophysics Data System (ADS)

    Peña, Y.; Lugo, S.; Calixto-Rodriguez, M.; Vázquez, A.; Gómez, I.; Elizondo, P.

    2011-01-01

    In this work, we report the formation of CuInS 2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In 2S 3) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS 2 (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10 -8 to 3 Ω -1 cm -1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

  5. Characterization of RF reactively sputtered Cu-In-S thin films

    NASA Astrophysics Data System (ADS)

    He, Y. B.; Polity, A.; Gregor, R.; Pfisterer, D.; Österreicher, I.; Hasselkamp, D.; Meyer, B. K.

    2001-12-01

    The ternary compound semiconductor CuInS 2 has attracted much attention owing to its potential applications in photovoltaic devices. We deposit CuInS 2 films on float glass substrates by a reactive radio frequency sputter process using a Cu-In inlay target and H 2S gas in one step. The morphology of the films was studied by Atomic Force Microscopy, X-ray Diffraction was used to check the crystal structure of the films. The composition of the layers was determined by Rutherford Back-scattering Spectroscopy and Energy-Dispersive X-ray Analysis. The electrical properties of the layers, i.e. the carrier concentration, Hall mobility, and specific resistivity and their dependencies on temperature were investigated by Hall effect measurements.

  6. Electrophoretic deposition of Cu-In composite nanoparticle thin films for fabrication of CuInSe2 solar cells

    NASA Astrophysics Data System (ADS)

    Guo, Wei; Hagedorn, Kevin; Liu, Bing

    2011-10-01

    Thin films of Cu-In composite nanoparticles were produced by electrophoretic deposition in colloidal suspensions. The nanoparticles were prepared with high power pulsed laser ablation in liquid solvents. The nanoparticles inherited composition (Cu/In ratio) from the target during laser ablation. The colloidal suspension was stable against agglomeration without adding additional surfactant or dispersing agent. The success of electrophoretic deposition of the nanoparticles was explained based on electrochemical interactions between the nanoparticles and the electrode. CuInSe2solar absorber layers were produced after annealing the thin films in selenium vapor under atmospheric pressure. Solar cell devices were made on Mo metal sheet and Mo-coated soda-lime glass substrates with an energy conversion efficiency of up to 3.4% under AM1.5G illumination. The results open up a new route of non-vacuum fabrication of thin film chalcopyrite solar cells on flexible substrates with minimized chemical contamination, easy compositional control, and high raw material utilization.ationDa

  7. Atmospheric Pressure Spray Chemical Vapor Deposited CuInS2 Thin Films for Photovoltaic Applications

    NASA Technical Reports Server (NTRS)

    Harris, J. D.; Raffaelle, R. P.; Banger, K. K.; Smith, M. A.; Scheiman, D. A.; Hepp, A. F.

    2002-01-01

    Solar cells have been prepared using atmospheric pressure spray chemical vapor deposited CuInS2 absorbers. The CuInS2 films were deposited at 390 C using the single source precursor (PPh3)2CuIn(SEt)4 in an argon atmosphere. The absorber ranges in thickness from 0.75 - 1.0 micrometers, and exhibits a crystallographic gradient, with the leading edge having a (220) preferred orientation and the trailing edge having a (112) orientation. Schottky diodes prepared by thermal evaporation of aluminum contacts on to the CuInS2 yielded diodes for films that were annealed at 600 C. Solar cells were prepared using annealed films and had the (top down) composition of Al/ZnO/CdS/CuInS2/Mo/Glass. The Jsc, Voc, FF and (eta) were 6.46 mA per square centimeter, 307 mV, 24% and 0.35%, respectively for the best small area cells under simulated AM0 illumination.

  8. Composition Control of CuInSe2 Thin Films Using Cu/In Stacked Structure in Coulometric Controlled Electrodeposition Process.

    PubMed

    Kwon, Yong Hun; Do, Hyun Woo; Kim, Hyoungsub; Cho, Hyung Koun

    2015-10-01

    Cu/In bi-metal stacked structures were prepared on Mo coated soda lime glass substrates using electrodeposition method. These metallic precursors were selenized at 550 °C for 60 min to synthesize the CuInSe2 (CIS) thin films in a thermal evaporator chamber with an Se overpressure atmosphere. The composition ratios of CIS thin films were systematically controlled using the coulometric method of the electrodeposition, where the accumulated coulomb of In layers was varied from 1062 to 6375 mC/cm2. As a result, the stoichiometric CIS film was obtained in the Cu/In coulomb ratio of 0.6. Highly crystallized CIS films were produced from the liquid Cu-Se phase in the Cu/In coulomb ratio of ≥0.6. In contrast, the crystallinity and grain size were degraded in the In-rich region. We found that the Cu/In composition ratio of CIS films was linearly proportional to the precursor thickness determined by the coulomb ratio.

  9. Photon induced facile synthesis and growth of CuInS2 absorber thin film for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Singh, Manjeet; Jiu, Jinting; Suganuma, Katsuaki

    2016-04-01

    In this paper, we demonstrate the use of high intensity pulsed light technique for the synthesis of phase pure CuInS2 (CIS) thin film at room temperature. The intense pulse of light is used to induce sintering of binary sulfides CuS and In2S3 to produce CIS phase without any direct thermal treatment. Light energy equivalent to the 706 mJ/cm2 is found to be the best energy to convert the CIS precursor film deposited at room temperature into CIS pure phase and well crystalline film. The CIS absorber film thus prepared is useful in making printed solar cell at room temperature on substrate with large area.

  10. Characterization of CuInS2 thin films prepared from materials grown by using the mechanochemical method and their photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Akaki, Yoji; Sugimoto, Kanta; Nakamura, Shigeyuki; Yamaguchi, Toshiyuki; Yoshino, Kenji

    2015-08-01

    Cu-In-S thin films were deposited on glass substrates using single-source thermal evaporation with ternary compounds as source materials. Polycrystalline CuInS2 powder grown using the mechanochemical method was employed as the source material. After deposition, the films were annealed in H2S gas at different temperatures from 250 to 500 °C for 60 min. X-ray diffraction patterns indicated that single-phase CuInS2 was formed when annealed above 400 °C. The grain size of the crystals in thin films was approximately 0.2 to 2.0 µm. The best Al/ZnO:Al/ZnO/CdS/CuInS2/Mo solar cell had an open-circuit voltage of 360 mV, a short-circuit current density of 18.6 mA/cm2, and a fill factor of 35.5%, resulting in 2.38% efficiency.

  11. Rapid growth of nanocrystalline CuInS 2 thin films in alkaline medium at room temperature

    NASA Astrophysics Data System (ADS)

    Roh, Seung Jae; Mane, Rajaram S.; Pathan, Habib M.; Joo, Oh-Shim; Han, Sung-Hwan

    2005-12-01

    Layer-by-layer (LbL) deposition of CuInS 2 (CIS) thin films at room temperature (25 °C) from alkaline CuSO 4 + In 2(SO 4) 3 and Na 2S precursor solutions was reported. The method allowed self-limited growth of CIS films with nanocrystalline structure and composed of densely packed nanometer-sized grains. The as-deposited CIS film was 250 nm thick and composed of closely packed particles of 20-30 nm in diameter. The alkaline cationic precursor solution was obtained by dissolving CuSO 4 and InSO 4 in deionized water with a appropriate amount of hydrazine monohydrate (H-H) and 2,2',2″-nitrilotriethanol (TEA). CIS films were annealed at 200 °C for 2 h and effect of annealing on structural, optical, and surface morphological properties was thoroughly investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, UV-vis spectrometer, C-V, and water contact angle techniques, respectively.

  12. Surface sulfurization on MBE-grown Cu(In1-x,Gax)Se2 thin films and devices

    NASA Astrophysics Data System (ADS)

    Khatri, Ishwor; Matsuyama, Isamu; Yamaguchi, Hiroshi; Fukai, Hirofumi; Nakada, Tokio

    2015-08-01

    Molecular beam epitaxy (MBE) grown Cu(In1-x,Gax)Se2 (CIGS) thin films were sulfurized at temperatures of 450-550 °C for 30 min in a 10% H2S-N2 mixture gas. The micro-roughness together with the S diffusion in the CIGS surfaces increased with increasing sulfurization temperature. Both near-band-edge PL intensity and decay time of the CIGS absorber layer enhanced after sulfurization. PL sub-peak around 80 meV below the main peak almost disappeared after sulfurization above 500 °C, which is expected due to the occupation of Se vacancies (Vse) with S. The open-circuit voltage (Voc), hence conversion efficiency, improved after sulfurization. The photovoltaic performance of the solar cells was consistent with PL intensity. Moreover, it is found for the first time from the SIMS analysis that the Cu atoms were depleted at the surface of CIGS layer after sulfurization, which could result in the improved Voc.

  13. Transmission photoacoustic spectroscopy analysis of CuIn0.75Ga0.25Se2 thin films

    NASA Astrophysics Data System (ADS)

    Ahmed, E.; Ahmed, W.; Pilkington, R. D.; Hill, A. E.; Jackson, M. J.

    2006-04-01

    Photoacoustic spectroscopy (PAS) has proved to be an effective technique for the evaluation of the inherent defect population in a wide range of materials for various applications. This paper demonstrates the use of this technique in transmission mode, and hence, evaluates the optical properties of flash-evaporated CuIn0.75Ga0.25Se2 (CIGS) thin films. Both the photoacoustic and transmission spectra were recorded at room temperature using high-resolution near-IR of the gas-microphone-type PAS, which revealed a very broad transmission region (about 300 meV) near the fundamental band edge in the as-grown CIGS thin films due to the presence of several shallow defect levels. The postdeposition heat treatment of the samples under Se ambient, followed by annealing under inert and forming gas ambient, showed significant changes in the behavior of the PAS spectra, particularly near the fundamental band edge. The absorption coefficient has been derived from these spectra to determine the energy band gap values and the activation energies for several defect related energy levels. Using PAS, the energy band gap values were in the range of 1.197 to 1.202 eV. The optical transmission spectra were also recorded from the routinely used spectrophotometer. The transmission data was used to determine the energy band-gap values, which were calculated to be in the range from 1.159 to 1.194 eV. These values were found to be in good agreement with each other, as well as with values reported in the literature.

  14. Effects of Sulfurization Temperature on Cu(In, Ga)S2 Thin Film Solar Cell Performance by Rapid Thermal Process.

    PubMed

    Kim, Kilim; Kim, Dongjin; Ahn, Kyung-Jun; Jeong, Cheahwan

    2016-05-01

    Cu(In, Ga)S2 (CIGS) absorbers were prepared using two-step process. Cu-In-Ga precursors were deposited by sputtering method and then were sulfurized by rapid thermal process based on H2S gas. Sulfurization temperature was changed from 470 degrees C to 510 degrees C. As the processing temperature increased, larger grains and denser absorbers were observed. The polycrystalline chalcopyrite structure of CuInGaS2 was shown in all samples, and their XRD peak was dominantly observed at (112) direction. CIGS thin film solar cells were fabricated with wide-bandgap absorbers obtained by varying sulfurization temperature. The best efficiency was shown with the processing temperature of 490 degrees C and 8.93% with 1.507 eV of wide optical bandgap. PMID:27483834

  15. Transport properties of CuIn(1-x)Al(x)Se2/AZnO heterostructure for low cost thin film photovoltaics.

    PubMed

    Murali, Banavoth; Krupanidhi, S B

    2014-02-01

    CuIn(1-x)Al(x)Se2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (ΔSO) and crystal field (ΔCF) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn(1-x)Al(x)Se2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A.M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 × 10(-3) A in the dark at 1 V to 3 × 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity Rλ ~ 920 A W(-1), sensitivity S ~ 9.0, specific detectivity D* ~ 3 × 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

  16. Surface effects of heat treatments in active atmosphere on structural, morphological and electrical characteristics of CuInS{_2} thin films

    NASA Astrophysics Data System (ADS)

    Kanzari, M.; Abaab, M.; Rezig, B.; Brunel, M.

    1999-05-01

    Thin amorphous CuInS2 films were deposited on the glass substrates by single source thermal evaporation technique. The effect of heat treatments in sulfur atmosphere, in air and under vacuum on the surface layers is discussed in terms of the surface structure of the films. The films were examined by grazing X-ray diffraction and reflectometry (GXRD and GXRR). From a comparison with the GXRD results, the densities of the surface layers are explained by the presence of secondary phases. We established a correlation between stoichiometry and conductivity depending on the annealing conditions. Des couches minces de CuInS2 amorphe sont déposées sur des substrats de verre par la technique d'évaporation thermique monosource. L'effet des traitements thermiques sous atmosphère de soufre, air et sous vide sur les surfaces des couches a été discuté en relation avec les propriétés structurales des surfaces des couches. Les couches sont analysées par la réflectométrie et la diffraction de rayons X rasants. Par comparaison avec les résultats de la diffraction de rayons X rasants, les densités des surfaces des couches sont expliquées par la présence des phases secondaires. Nous avons établi une corrélation entre la stœchiométrie des couches et leurs conductivités en fonction des conditions de recuit.

  17. Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

    NASA Technical Reports Server (NTRS)

    Jin, M. H.-C.; Banger, K. K.; Kelly, C. V.; Scofield, J. H.; McNatt, J. S.; Dickman, J. E.; Hepp, A. F.

    2005-01-01

    The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

  18. Effects of Cu/In compositional ratio on the characteristics of CuInS2 absorber layers prepared by sulfurization of metallic precursors

    NASA Astrophysics Data System (ADS)

    Lee, Seung Hwan; Shin, Seung Wook; Han, Jun Hee; Lee, Jeong Yong; Kang, Myeong Gil; Agawane, G. L.; Yun, Jae Ho; Moon, Jong Ha; Kim, Jin Hyeok

    2012-04-01

    This paper investigates the effects of the Cu/In compositional ratio on morphological, structural and optical properties of CuInS2 (CIS) absorber layers formed by sulfurization of In/Cu stacked precursors. In/Cu stacked precursors were prepared on Mo-coated soda-lime glass substrates by DC magnetron sputtering method. The Cu/In compositional ratio in the precursor thin film was varied from 0.55 to 1.44. The as-deposited stacked precursor thin films were sulfurized using a tubular furnace annealing system in a mixture of N2 (95%) + H2S (5%) atmosphere at 450°C for 1 hour. X-ray diffraction patterns and Raman spectra results showed that the sulfurized thin films contained both tetragonal CIS and a Cu-based secondary phase, except for the film with a Cu/In compositional ratio of 0.55. Field emission-scanning electron microscopy study showed that the microstructure of the sulfurized CIS thin films became denser with increasing Cu/In compositional ratio. Optical properties of the CIS thin films showed that all the CIS thin films had a good absorption coefficient over 104 cm-1 in the visible region. The direct band gap energy of the sulfurized CIS thin films decreased from 1.39 eV to 1.08 eV with increasing Cu/In compositional ratio. These results demonstrated the effect of the Cu/In compositional ratio on the properties of the CIS thin films and the consequent importance of precisely controlling the metal ratio in the precursor film in order to control the properties of absorber layers in thin film solar cells.

  19. Synthesis and Characterization of the First Liquid Single Source Precursors for the Deposition of Ternary Chalcopyrite (CuInS2) Thin Film Materials

    NASA Technical Reports Server (NTRS)

    Banger, Kulbinder K.; Cowen, Jonathan; Hepp, Aloysius

    2002-01-01

    Molecular engineering of ternary single source precursors based on the [{PBu3}2Cu(SR')2In(SR')2] architecture have afforded the first liquid CIS ternary single source precursors (when R = Et, n-Pr), which are suitable for low temperature deposition (< 350 C). Thermogravimetric analyses (TGA) and modulated-differential scanning calorimetry (DSC) confirm their liquid phase and reduced stability. X-ray diffraction studies, energy dispersive analyzer (EDS), and scanning electron microscopy (SEM) support the formation of the single-phase chalcopyrite CuInS2 at low temperatures.

  20. Structures, optical absorption and electrical properties of pulsed-laser-deposited CuIn0.8Ga0.2Se2 thin films and their use in CIGS/PCBM photovoltaic structures

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Wu, JiaDa; Xu, Ning

    2016-10-01

    Polycrystalline CuIn0.8Ga0.2Se2 (CIGS) thin films are deposited on ITO-glass substrates at different substrate temperatures by pulsed laser deposition using a Nd:YAG laser. The crystallinity of the as-deposited CIGS films significantly improved as the substrate temperature increased. The experimental results indicate that the ordered defect compound model is also applicable to the CIGS films deposited in these experiments. All the as-deposited CIGS thin films show absorption coefficients of 105 cm‑1 magnitude in a wavelength range of 400–900 nm. The CIGS thin films deposited at substrate temperatures lower than 400 °C exhibit n-type conductivity while those deposited at a substrate temperature of 500 °C display p-type conductivity. The CIGS/phenyl-C61-butyric acid methyl ester (PCBM) photovoltaic structure, with a CIGS layer as the only absorber, demonstrates an apparent photovoltaic response with a short circuit current density of 0.389 mA cm‑2 and an open circuit voltage of 0.327 V.

  1. Sputtered molybdenum thin films and the application in CIGS solar cells

    NASA Astrophysics Data System (ADS)

    Zhou, D.; Zhu, H.; Liang, X.; Zhang, C.; Li, Z.; Xu, Y.; Chen, J.; Zhang, L.; Mai, Y.

    2016-01-01

    Molybdenum (Mo) thin films are prepared by magnetron sputtering with different discharge powers and working pressures for the application in Cu(In, Ga)Se2 (CIGS) thin film solar cells as back electrodes. Properties of these Mo thin films are systematically investigated. It is found that the dynamic deposition rate increases with the increasing discharge power while decreases with the increasing working pressure. The highest dynamic deposition rate of 15.1 nm m/min is achieved for the Mo thin film deposited at the discharge power of 1200 W and at the working pressure of 0.15 Pa. The achieved lowest resistivity of 3.7 × 10-5 Ω cm is attributed to the large grains in the compact thin film. The discharge power and working pressure have great influence on the sputtered Mo thin films. High efficiency of 12.5% was achieved for the Cu(In, Ga)Se2 (CIGS) thin film solar cells with Mo electrodes prepared at 1200 W and low working pressures. By further optimizing material and device properties, the conversion efficiency has reached to 15.2%.

  2. Application of ICP-OES to the determination of CuIn(1-x)Ga(x)Se2 thin films used as absorber materials in solar cell devices.

    PubMed

    Fernández-Martínez, Rodolfo; Caballero, Raquel; Guillén, Cecilia; Gutiérrez, María Teresa; Rucandio, María Isabel

    2005-05-01

    CuIn(1-x)Ga(x)Se2 [CIGS; x=Ga/(In+Ga)] thin films are among of the best candidates as absorber materials for solar cell applications. The material quality and main properties of the polycrystalline absorber layer are critically influenced by deviations in the stoichiometry, particularly in the Cu/(In+Ga) atomic ratio. In this work a simple, sensitive and accurate method has been developed for the quantitative determination of these thin films by inductively coupled plasma optical emission spectrometry (ICP-OES). The proposed method involves an acid digestion of the samples to achieve the complete solubilization of CIGS, followed by the analytical determination by ICP-OES. A digestion procedure with 50% HNO3 alone or in the presence of 10% HCl was performed to dissolve those thin films deposited on glass or Mo-coated glass substrates, respectively. Two analytical lines were selected for each element (Cu 324.754 and 327.396 nm, Ga 294.364 and 417.206 nm, In 303.936 and 325.609 nm, Se 196.090 and 203.985 nm, and Mo 202.030 and 379.825 nm) and a study of spectral interferences was performed which showed them to be suitable, since they offered a high sensitivity and no significant inter-element interferences were detected. Detection limits for all elements at the selected lines were found to be appropriate for this kind of application, and the relative standard deviations were lower than 1.5% for all elements with the exception of Se (about 5%). The Cu/(In+Ga) atomic ratios obtained from the application of this method to CIGS thin films were consistent with the study of the structural and morphological properties by X-ray diffraction (XRD) and scanning electron microscopy (SEM). PMID:15702309

  3. Application of ICP-OES to the determination of CuIn(1-x)Ga(x)Se2 thin films used as absorber materials in solar cell devices.

    PubMed

    Fernández-Martínez, Rodolfo; Caballero, Raquel; Guillén, Cecilia; Gutiérrez, María Teresa; Rucandio, María Isabel

    2005-05-01

    CuIn(1-x)Ga(x)Se2 [CIGS; x=Ga/(In+Ga)] thin films are among of the best candidates as absorber materials for solar cell applications. The material quality and main properties of the polycrystalline absorber layer are critically influenced by deviations in the stoichiometry, particularly in the Cu/(In+Ga) atomic ratio. In this work a simple, sensitive and accurate method has been developed for the quantitative determination of these thin films by inductively coupled plasma optical emission spectrometry (ICP-OES). The proposed method involves an acid digestion of the samples to achieve the complete solubilization of CIGS, followed by the analytical determination by ICP-OES. A digestion procedure with 50% HNO3 alone or in the presence of 10% HCl was performed to dissolve those thin films deposited on glass or Mo-coated glass substrates, respectively. Two analytical lines were selected for each element (Cu 324.754 and 327.396 nm, Ga 294.364 and 417.206 nm, In 303.936 and 325.609 nm, Se 196.090 and 203.985 nm, and Mo 202.030 and 379.825 nm) and a study of spectral interferences was performed which showed them to be suitable, since they offered a high sensitivity and no significant inter-element interferences were detected. Detection limits for all elements at the selected lines were found to be appropriate for this kind of application, and the relative standard deviations were lower than 1.5% for all elements with the exception of Se (about 5%). The Cu/(In+Ga) atomic ratios obtained from the application of this method to CIGS thin films were consistent with the study of the structural and morphological properties by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

  4. Reliability Investigation of Cu/In TLP Bonding

    NASA Astrophysics Data System (ADS)

    Lee, Jong-Bum; Hwang, How-Yuan; Rhee, Min-Woo

    2015-01-01

    Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from -40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.

  5. Reliability Investigation of Cu/In TLP Bonding

    NASA Astrophysics Data System (ADS)

    Lee, Jong-Bum; Hwang, How-Yuan; Rhee, Min-Woo

    2014-09-01

    Die-attach bonding was evaluated using a transient liquid phase (TLP) bonding method on a Cu/In, Au/In and Cu-Sn3Ag metal stack. TLP bonding is a relatively low cost process since thin layers of material are used and, at the same time, has higher reliability due to the good thermal resistance of the intermetallic compounds (IMCs) formed. The bonded samples were aged at 300°C for 500 h and thermal cycled from -40°C to 125°C for 500 cycles. The results showed that the shear strength of the Cu/In joint was higher than that of the Au/In joint with increasing aging time. Cu/In specimens on a ceramic substrate also showed good reliability results during the thermal cycling test. Even though Cu/In TLP bonding is not popular in conventional electronics, it is suitable for high temperature electronics due to the simplicity of the IMC formation.

  6. Growth, structural and optical properties of non-stoichiometric CuIn(S1-xSex)2 thin films deposited by solution growth technique for photovoltaic application

    NASA Astrophysics Data System (ADS)

    Chavhan, S.; Sharma, R.

    2006-04-01

    Polycrystalline thin films of p-CuIn(S1-xSex)2 have been deposited by a solution growth technique. The deposition parameters such as pH, temperature and time have been optimized. In order to achieve uniformity of thin film, triethanolamine (TEA) has been used. As deposited films have been annealed at 450 °C in air for 5 min. The surface morphology, compositional ratio, structural properties have been studied by SEM, EDAX and XRD technique, respectively. It has been found that films have chalcopyrite structure with the lattice parameters a=5.28 Å and c=11.45 Å at composition x=0.5. The grain size of all composition x measured from SEM and XRD is varied in between 450 and 520 nm. The optical transmittance spectra have been recorded in the range 350 1000 nm. The absorption coefficient has been calculated at the absorption edge for each of the composition x and it is in the range of 104 cm-1. The material shows the direct allowed band gap, which varies from 1.07 to 1.44 eV with change in composition (0≤x≤1.0). These parameters are useful for the photovoltaic application.

  7. Role of deposition time on structural, optical and electrical properties of In-rich Cu-In-S spinel films grown by electrodeposition technique

    NASA Astrophysics Data System (ADS)

    Gannouni, M.; Ben Assaker, I.; Chtourou, R.

    2013-09-01

    CuIn5S8 spinel films were grown at different deposition times onto (ITO)-coated glass substrates using a one-step electrodeposition route of In-rich Cu-In-S system. A contribution to the knowledge of thickness (or deposition time) dependence of structural, morphological, optical, and electrical properties of CuIn5S8 thin film is reported. According to these studies, when the deposition time is extended beyond 10 min, X-ray diffraction pattern has indicated a growth mode along the (3 1 1) plane which is consistent with the CuIn5S8 cubic spinel structure. XRD peaks broaden and shift depending on film thicknesses which are presumably due to strain and size effect. From AFM analysis, nucleus density, size, roughness, as well as film thickness have increased with increasing deposition time from 1 to 30 min. Through optical measurements, both values of transmittance and band gap have decreased respectively from approximately (˜77%) to (˜40%) and from 2.75 eV to 1.53 eV with the increase of deposition time. The film deposited at 15 min shows a minimum electrical resistivity of about 3.12 × 10-3 Ω cm. It is also reported that by controlling the electrodeposition time, n-type or p-type conductivity of CuIn5S8 could be adjusted.

  8. Hybrid density functional theory study of Cu(In1-xGax)Se2 band structure for solar cell application

    NASA Astrophysics Data System (ADS)

    Chen, Xu-Dong; Chen, Lin; Sun, Qing-Qing; Zhou, Peng; Zhang, David Wei

    2014-08-01

    Cu(In1-xGax)Se2 (CIGS) alloy based thin film photovoltaic solar cells have attracted more and more attention due to its large optical absorption coefficient, long term stability, low cost and high efficiency. However, the previous theoretical investigation of this material with first principle calculation cannot fulfill the requirement of experimental development, especially the accurate description of band structure and density of states. In this work, we use first principle calculation based on hybrid density functional theory to investigate the feature of CIGS, with B3LYP applied in the CuIn1-xGaxSe2 stimulation of the band structure and density of states. We report the simulation of the lattice parameter, band gap and chemical composition. The band gaps of CuGaSe2, CuIn0.25Ga0.75Se2, CuIn0.5Ga0.5Se2, CuIn0.75Ga0.25Se2 and CuInSe2 are obtained as 1.568 eV, 1.445 eV, 1.416 eV, 1.275 eV and 1.205 eV according to our calculation, which agree well with the available experimental values. The band structure of CIGS is also in accordance with the current theory.

  9. A High Yield Synthesis of Chalcopyrite CuInS2 Nanoparticles with Exceptional Size Control

    SciTech Connect

    Sun, Chivin; Gardner, Joseph S.; Shurdha, Endrit; Margulieux, Kelsey R.; Westover, Richard D.; Lau, Lisa D.; Long, Gary; Bajracharya, Cyril; Wang, Chong M.; Thurber, Aaron P.; Punnoose, Alex; Rodriguez, Rene G.; Pak, Joshua J.

    2009-12-29

    Various I-III-VI2 semiconductor materials have been identified as promising photovoltaic materials [1, 2]. Recently, quantum dot (QD) based solar cells have attracted much attention due to their potential to replace thin film devices [3-5]. One of the major advantages of employing QDs is by simply changing the particle size they can be tuned to absorb specific wavelengths ranging from visible to infrared wavelengths [6]. Furthermore, with careful design of photovoltaic (PV) devices incorporating various sizes of nanoparticles in multiple layers, one may achieve increased solar energy absorption in one device [7, 8]. In order to facilitate QD based multilayer devices, synthetic strategies that can deliver QDs in high yields with precise size control are essential. One of the strategies to prepare QDs is to prepare nanoparticles from molecular single source precursors (SSPs), which contain all necessary elements in a single molecule. In recent years, there have been several reports on the formation of CuInS2 nanoparticles through the decomposition of SSPs using thermolysis [9-14], photolysis [18], and microwave irradiation [16]. However, many of these procedures require a combination of long reaction times (10 to 24 hours) and high reaction temperatures (often exceeding 200 °C) with very little information regarding overall yields. Microwave-assisted growth of nanoparticles is generally favorable over traditional thermolysis as microwave irradiation overcomes local intermediaries and increases the microscopic temperature of the reaction [17] thus exhibiting greater homogeneity in the overall reaction temperature. This allows for nanoparticles with diameters of a few nanometers can be prepared [18], dramatic decreases in reaction times, improved product purities, all forms of precursors can be used, and reactions exhibit high reproducibility and yields [19]. For CuInS2 QDs, the Wannier-Mott bulk exciton radius is approximately 8 nm with a bandgap of 1.45 eV and QDs

  10. The annealing effect on structural, optical and photoelectrical properties of CuInS 2/In 2S 3 films

    NASA Astrophysics Data System (ADS)

    Kundakçı, Mutlu

    2011-08-01

    Successive Ionic Layer Adsorption and Reaction (SILAR) technique was used to deposit the CuInS 2/In 2S 3 multilayer thin film structure at room temperature. The as-deposited film was annealed at 100, 200, 300, 400 and 500 °C for 30 min in nitrogen atmosphere and the annealing effect on structural, optical and photoelectrical properties of the film was investigated. X-ray diffraction (XRD) and optical absorption spectroscopy were used for structural and optical studies. Current-Voltage ( I-V) measurements were performed in dark environment and under 15, 30 and 50 mW/cm 2 light intensity to investigate the photosensitivity of the structure. Also, the electrical resistivity of the film was determined in the temperature range of 300-470 K. It was found that annealing temperature drastically affects the structural, optical and photoelectrical properties of the CuInS 2/In 2S 3 films.

  11. A Novel Method for Preparation of Zn-Doped CuInS2 Solar Cells and Their Photovoltaic Performance

    PubMed Central

    Peng, Cheng-Hsiung; Hwang, Chyi-Ching

    2013-01-01

    In this study, a novel method was proposed to synthesize high quality Zn-doped CuInS2 nanocrystals under high frequency magnetic field at ambient conditions. The magnetic Zn-doping gave superparamagnetic heating of the resulting nanocrystals via magnetic induction, causing an accelerating growth rate of the doped CuInS2 under ambient conditions faster than conventional autoclave synthesis. Shape evolution of the Zn-doped CuInS2 nanocrystals from initially spherical to pyramidal, to cubic, and finally to a bar geometry was detected as a function of time of exposure to magnetic induction. These colloidal solvents with different shaped nanocrystals were further used as “nanoink” to fabricate a simple thin film solar device; the best efficiency we obtained of these crystals was 1.01% with a 1.012 μm thickness absorber layer (bar geometry). The efficiency could be promoted to 1.44% after the absorber was thickened to 2.132 μm. PMID:24453908

  12. The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.; Banger, Kulinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2003-01-01

    Ternary single-source precursors were used to deposit CuInS2 thin films using chemical spray pyrolysis. We investigated the effect of the film composition on texture, secondary phase formation, and grain size. As-grown films were most often In-rich. They became more (204/220)-oriented as indium concentration increased, and always contained a yet unidentified secondary phase. The (112)-prefened orientation became more pronounced as the film composition became more Cu-rich. The secondary phase was determined to be an In-rich compound based on composition analysis and Raman spectroscopy. In addition, as-grown Cu-rich (112)-oriented films did not exhibit the In-rich compound. Depositing a thin Cu layer prior to the growth of CuInS2 increased the maximum grain size from - 0.5 micron to - 1 micron, and prevented the formation of the In-rich secondary phase.

  13. Local Structure of CuIn3Se5

    SciTech Connect

    Chang, C. H.; Wei, S. H.; Leyarovska, N.; Johnson, J. W.; Zhang, S. B.; Stanbery, B. J.; Anderson, T. J.

    2000-01-01

    The results of a detailed EXAFS study of the Cu-K, In-K, and Se-K edges CuIn3Se5 are reported. The Cu and In first nearest neighbor local structures were found to be almost identical to those in CuInSe2.

  14. Nanocrystalline CuInS2 And CuInSe2 via Low-Temperature Pyrolysis Of Single-Source Molecular Precursors

    NASA Technical Reports Server (NTRS)

    Castro, Stephanie L.; Bailey, Sheila G.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Hepp, Aloysius F.

    2002-01-01

    Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of the material with the correct stoichiometry, as a nanocrystalline powder or a thin film. Nanocrystalline materials hold potential as components of next-generation Photovoltaic (PV) devices. Presented here are the syntheses of CuInS2 and CuInSe2 nanocrystals from the precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively. The size of the nanocrystals varies with the reaction temperature; a minimum of 200 C is required for the formation of the smallest CuInS2 crystals (approximately 1.6 nm diameter); at 300 C, crystals are approximately 7 nm.

  15. Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

    PubMed Central

    2012-01-01

    Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se2 solar cells. PMID:22221917

  16. Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In, Ga)Se2 solar cell materials

    NASA Astrophysics Data System (ADS)

    Schulz, Douglas L.; Curtis, Calvin J.; Flitton, Rebecca A.; Wiesner, Holm; Keane, James; Matson, Richard J.; Jones, Kim M.; Parilla, Philip A.; Noufi, Rommel; Ginley, David S.

    1998-05-01

    The use of nanoparticle colloids for spray deposition of Cu(In,Ga)Se2 (CIGS) precursor films and subsequent fabrication of CIGS solar cells has been investigated. According to this approach, amorphous Cu-In-Ga-Se nanoparticle colloids were first prepared by reacting a mixture of CuI, InI3, and GaI3 in pyridine with Na2Se in methanol at reduced temperature. Purified colloid was sprayed onto heated molybdenum-coated sodalime glass substrates to form Cu-In-Ga-Se precursor films. After thermal processing of the precursor films under a selenium ambient, CIGS solar cells were fabricated. Cu-In-Ga-Se colloids and films were characterized by inductively coupled plasma atomic emission spectroscopy, thermogravimetric analysis, transmission electron microscopy, x-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy. Standard current-voltage characterization was performed on the CIGS solar cell devices with the best film exhibiting a solar conversion efficiency of 4.6%.

  17. Spray Chemical Vapor Deposition of CulnS2 Thin Films for Application in Solar Cell Devices

    NASA Technical Reports Server (NTRS)

    Hollingsworth, Jennifer A.; Buhro, William E.; Hepp, Aloysius F.; Jenkins. Philip P.; Stan, Mark A.

    1998-01-01

    Chalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300-400 C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 C. At even higher temperatures (500 C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

  18. Etude des propriétés optiques des couches minces de CuInS2 et d'In-S " Airless spray "

    NASA Astrophysics Data System (ADS)

    Kamoun, N.; Bennaceur, R.; Frigerio, J. M.

    1994-05-01

    In this work we have studied the optical properties of the thin CuInS2 and In-S layers prepared by airless spray " P.S.A. ". The study of the optical properties from the ellipsometric measure realized in the interval energy of incident photons [1.5-4] eV, has showed that the refraction index n_1 and the extinction coefficient k_1 vary in the interval [1.8-2.3] and [0.45-0.80] respectively. The absorption coefficient α of the thin CuInS2 layers realized for different ratios x of the concentrations in the spray solution (x =frac[CuI][InIII]) is high with values varied between (5 × 10^4 and 18 × 10^4 cm^{-1}). The direct gap energy of the thin CuInS2 layers of the order of 1.38 eV. In the same way, we study the spectrum variation of n_1 (λ) and k_1 (λ) of the thin In-S layers, realized for two values of ratio y of the concentration in the spray solution (y=frac{[In^{3+}]}{[S^{2-}]}), shows that for the value of y = 0.6 (material β-In2S3) the refraction index is higher than that of the thin layer obtained for the value of y = 0.75 (material In6S7) [1], and that the extinction coefficient is lower than that of In6S7. For In-S thin layers, α is also high with values varing between 2×10^4 and 12×10^4 cm^{-1}. The direct band gap of materials β-In2S3 and In6S7 are 2.22 eV and 1.94 eV respectively. The heat treatment under vacuum at 573 K during two hours improves the optical quality of the thin " p " type CuInS2 Layer. Dans ce travail nous avons étudié les propriétés optiques des couches minces de CuInS2 et d'In-S réalisées par pulvérisation chimique réactive sans air " P.S.A. ". L'étude des propriétés optiques des couches minces de CuInS2, à partir des mesures ellipsométriques effectuées dans le domaine des photons incidents [1,5-4] eV, a révélé que l'indice de réfraction n_1 et le coefficient d'extinction k_1 varient respectivement dans les domaines [1,8-2,3] et [0,45-0,80]. Le coefficient d'absorption α, des couches minces de CuInS2 r

  19. Light-stimulated carrier dynamics of CuInS2/CdS heterotetrapod nanocrystals.

    PubMed

    Sakamoto, Masanori; Inoue, Koki; Okano, Makoto; Saruyama, Masaki; Kim, Sungwon; So, Yeong-Gi; Kimoto, Koji; Kanemitsu, Yoshihiko; Teranishi, Toshiharu

    2016-05-14

    We synthesized a heterotetrapod composed of a chalcopyrite(ch)-CuInS2 core and wurtzite(w)-CdS arms and elucidated its optical properties and light-stimulated carrier dynamics using fs-laser flash photolysis. The CuInS2/CdS heterotetrapod possessed quasi-type II band alignment, which caused much longer-lived charge separation than that in the isolated CuInS2 nanocrystal. PMID:27118533

  20. The influence of pre-heating temperature on the CIGS thin film growth and device performance prepared in cracked-Se atmosphere

    NASA Astrophysics Data System (ADS)

    Li, Guangmin; Liu, Wei; Liu, Yiming; Lin, Shuping; Li, Xiaodong; Zhang, Yi; Zhou, Zhiqiang; He, Qing; Sun, Yun

    2015-10-01

    The influence of pre-heating temperature on cracked-selenized Cu(In, Ga)Se2 (CIGS) films’ structure, growth kinetics, and photovoltaic performance is investigated. The ‘large island grains’ on the upper surface are the precursors of Cu2-xSe and finally evolve into Cu2-xSe as the pre-heating temperature increases to 400 °C. The ‘large island grains’, as well as In2Se3, are considered to be two decisive factors in forming CIGS as they facilitate the diffusion of cracked-Se into the thin films, because they make the films more incompact and suppress the fast formation of complete single CuInSe2 (CIS) during the 2nd heating. Stoichiometric CIGS thin films without a bi-layer structure and phase separation can be achieved by adjusting the appropriate pre-heating temperature. The performance of the solar cells is mainly influenced by the current leakage caused by small grains and cavities near the CIGS/Mo back contact.

  1. Photoelectrochemical Properties of Vertically Aligned CuInS2 Nanorod Arrays Prepared via Template-Assisted Growth and Transfer.

    PubMed

    Yang, Wooseok; Oh, Yunjung; Kim, Jimin; Kim, Hyunchul; Shin, Hyunjung; Moon, Jooho

    2016-01-13

    Although copper-based chalcopyrite materials such as CuInS2 have been considered promising photocathodes for solar water splitting, the fabrication route for a nanostructure with vertical orientation has not yet been developed. Here, a fabrication route for vertically aligned CuInS2 nanorod arrays from an aqueous solution using anodic aluminum oxide template-assisted growth and transfer is presented. The nanorods exhibit a phase-pure CuInS2 chalcopyrite structure and cathodic photocurrent response without co-catalyst loading. Small particles of CdS and ZnS were conformally decorated onto CuInS2 nanorods using a successive ion layer adsorption and reaction method. With surface modification of CdS/ZnS, the photoelectrochemical properties of CuInS2 nanorod arrays are enhanced via flat-band potential shift, as determined by analyses of onset potential and Mott-Schottky plots. PMID:26645722

  2. Pressure effect on the structural and electronic properties of CuInS2

    NASA Astrophysics Data System (ADS)

    Adetunji, B. I.

    2016-05-01

    The pressure dependence of the bond length and energy gap in chalcopyrite CuInS2 between 0 and 40 GPa has been investigated using pseudopotentials plane-wave method within the generalized gradient approximation for the exchange-correlation potential. We found that the bond length decreases as the pressure increases. Also, the energy gap of CuInS2 expands as the pressure increases with a rate of 10.693 meV/GPa. The linear pressure coefficient calculated is approximately half the reported experimental value of 23 meV/GPA. Our calculated bulk modulus of 68.7 GPa is in good agreement with the available experimental and theoretical values. The present calculations show that the d-electrons of Cu ions are one of the important factors that dominate the contributions to the I-VI bonds and the energy gap in CuInS2.

  3. Pressure effect on the structural and electronic properties of CuInS2

    NASA Astrophysics Data System (ADS)

    Adetunji, B. I.

    2016-05-01

    The pressure dependence of the bond length and energy gap in chalcopyrite CuInS2 between 0 and 40 GPa has been investigated using pseudopotentials plane-wave method within the generalized gradient approximation for the exchange-correlation potential. We found that the bond length decreases as the pressure increases. Also, the energy gap of CuInS2 expands as the pressure increases with a rate of 10.693 meV/GPa. The linear pressure coefficient calculated is approximately half the reported experimental value of 23 meV/GPA. Our calculated bulk modulus of 68.7 GPa is in good agreement with the available experimental and theoretical values. The present calculations show that the d-electrons of Cu ions are one of the important factors that dominate the contributions to the I-VI bonds and the energy gap in CuInS2.

  4. Charge carrier loss mechanisms in CuInS2/ZnO nanocrystal solar cells.

    PubMed

    Scheunemann, Dorothea; Wilken, Sebastian; Parisi, Jürgen; Borchert, Holger

    2016-06-28

    Heterojunction solar cells based on colloidal nanocrystals (NCs) have shown remarkable improvements in performance in the last decade, but this progress is limited to merely two materials, PbS and PbSe. However, solar cells based on other material systems such as copper-based compounds show lower power conversion efficiencies and much less effort has been made to develop a better understanding of factors limiting their performance. Here, we study charge carrier loss mechanisms in solution-processed CuInS2/ZnO NC solar cells by combining steady-state measurements with transient photocurrent and photovoltage measurements. We demonstrate the presence of an extraction barrier at the CuInS2/ZnO interface, which can be reduced upon illumination with UV light. However, trap-assisted recombination in the CuInS2 layer is shown to be the dominant decay process in these devices. PMID:27250665

  5. Structural and optical analysis of single phase CuInS2 nanocrystals for solar cell applications

    NASA Astrophysics Data System (ADS)

    Sivagami, A. D.; Sarma, Bornali; Sarma, Arun

    2016-01-01

    Nanostructured phase pure CuInS2 particles have been successfully synthesized by solid state melt growth method. The crystallographic structure, morphological, chemical composition and optical properties of synthesized sample have been characterized by various analytical techniques, includes X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray (EDAX), UV-vis-NIR diffuse reflectance spectroscopy and photoluminescence spectroscopy. From the XRD spectra chalcopyrite structure of CuInS2 sample with phase pure nano particles is confirmed. Annealing promotes the grain size and crystallinity of the CuInS2 sample and is clearly indicated by XRD analysis. The optical band gap energy of CuInS2 sample is calculated to be 2.61 eV, which has also been confirmed by photoluminescence spectroscopy. SEM micrograph shows that the CuInS2 sample is composed of particles ranges from 25-50 nm in size. Annealed sample confirms the increase of particle size up to 85 nm. Compositional stability of CuInS2 phase pure nano particles have been studied by thermo gravimetric analysis. The effect of annealing temperatures on the structural and morphological properties of CuInS2 nanocrystals synthesized by solid state reactions has also been studied in this report.

  6. Light-stimulated carrier dynamics of CuInS2/CdS heterotetrapod nanocrystals

    NASA Astrophysics Data System (ADS)

    Sakamoto, Masanori; Inoue, Koki; Okano, Makoto; Saruyama, Masaki; Kim, Sungwon; So, Yeong-Gi; Kimoto, Koji; Kanemitsu, Yoshihiko; Teranishi, Toshiharu

    2016-05-01

    We synthesized a heterotetrapod composed of a chalcopyrite(ch)-CuInS2 core and wurtzite(w)-CdS arms and elucidated its optical properties and light-stimulated carrier dynamics using fs-laser flash photolysis. The CuInS2/CdS heterotetrapod possessed quasi-type II band alignment, which caused much longer-lived charge separation than that in the isolated CuInS2 nanocrystal.We synthesized a heterotetrapod composed of a chalcopyrite(ch)-CuInS2 core and wurtzite(w)-CdS arms and elucidated its optical properties and light-stimulated carrier dynamics using fs-laser flash photolysis. The CuInS2/CdS heterotetrapod possessed quasi-type II band alignment, which caused much longer-lived charge separation than that in the isolated CuInS2 nanocrystal. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01097k

  7. Facile synthesis of nanocrystalline wurtzite Cu-In-S by amine-assisted decomposition of precursors

    SciTech Connect

    Bera, Pulakesh; Il Seok, Sang

    2010-08-15

    Phase-pure ternary wurtzite Cu-In-S nanocrystals have been synthesized by a simple amine-assisted decomposition of mixed precursor complexes derived from S-methyl dithiocarbazate (SMDTC) at a relatively low temperature without using any external surfactant. The crystal phase, morphology, crystal lattice, and chemical composition of the as-prepared products were analyzed by using X-ray diffraction, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and energy-dispersive X-ray spectroscopy (EDX). The optical properties show the pronounced quantum confinement effect in nanocrystals. A possible growth mechanism has been suggested for the formation of anisotropic wurtzite Cu-In-S It is believed that a combined effect of the chelating amine and precursors containing CH{sub 3}S unit plays a key role in the formation of the metastable phase of wurtzite Cu-In-S. - Graphical abstract: Phase-pure ternary wurtzite Cu-In-S nanocrystals have been synthesized by a simple amine-assisted decomposition of mixed precursor complexes derived from S-methyl dithiocarbazate (SMDTC) at a relatively low temperature.

  8. New crystal structures in hexagonal CuInS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Shen, Xiao; Hernández-Pagan, Emil A.; Zhou, Wu; Puzyrev, Yevgeniy S.; Idrobo, Juan C.; MacDonald, Janet E.; Pennycook, Stephen J.; Pantelides, Sokrates T.

    2013-03-01

    CuInS2 is one of the best candidate materials for solar energy harvesting. Its nanocrystals with a hexagonal lattice structure that is different from the bulk chalcopyrite phase have been synthesized by many groups. The structure of these CuInS2 nanocrystals has been previously identified as the wurtzite structure in which the copper and indium atoms randomly occupy the cation sites. Using first-principles total energy and electronic structure calculations based on density functional theory, UV-vis absorption spectroscopy, X-ray diffraction, and atomic resolution Z-contrast images obtained in an aberration-corrected scanning transmission electron microscope, we show that CuInS2 nanocrystals do not form random wurtzite structure. Instead, the CuInS2 nanocrystals consist of several wurtzite- related crystal structures with ordered cation sublattices, some of which are reported for the first time here. This work is supported by the NSF TN-SCORE (JEM), by NSF (WZ), by ORNL's Shared Research Equipment User Program (JCI) sponsored by DOE BES, by DOE BES Materials Sciences and Engineering Division (SJP, STP), and used resources of the National Energy Research Scientific Computing Center, supported by the DOE Office of Science under Contract No. DE-AC02-05CH11231.

  9. Synthesis, Characterization and Decomposition Studies of Tris(N,N-dibenzyldithiocarbamato) Indium(III): Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.; Fanwick, Philip E.; Khan, Osman; Jin, Michael H.-C.; Hepp, Aloysius F.

    2005-01-01

    Tris(bis(phenylmethyl)carbamodithioato-S,S ), commonly referred to as tris(N,Ndibenzyldithiocarbamato) indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1 bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry and Fourier-Transform infrared spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.

  10. Ordered arrays of shape tunable CuInS2 nanostructures, from nanotubes to nano test tubes and nanowires

    NASA Astrophysics Data System (ADS)

    Shi, Liang; Pei, Congjian; Li, Quan

    2010-10-01

    Well-aligned arrays of chalcopyrite CuInS2 one dimensional nanostructures have been prepared in a controllable manner via a convenient wet-chemical approach using anodic aluminium oxide (AAO) as a hard template. Highly oriented CuInS2 nanotubes, nano test tubes and nanowires arrays can be selectively grown by simply varying reaction conditions. Oleylamine (OLA) was found to play a key role in the synthesis and morphology control of the CuInS2 product. The structure, morphology, composition and optical absorption properties of the as-prepared samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy and UV-Vis spectrophotometry. The formation mechanism of the CuInS2 arrays is discussed.

  11. Highly efficient graphene-based Cu(In, Ga)Se₂ solar cells with large active area.

    PubMed

    Yin, Ling; Zhang, Kang; Luo, Hailin; Cheng, Guanming; Ma, Xuhang; Xiong, Zhiyu; Xiao, Xudong

    2014-09-21

    Two-dimensional graphene has tremendous potential to be used as a transparent conducting electrode (TCE), owing to its high transparency and conductivity. To date graphene films have been applied to several kinds of solar cells except the Cu(In, Ga)Se₂ (CIGS) solar cell. In this work, we present a novel TCE structure consisting of a doped graphene film and a thin layer of poly(methyl methacrylate) (PMMA) to replace the ZnO:Al (AZO) electrode for CIGS. By optimizing the contact between graphene and intrinsic ZnO (i-ZnO), a high power conversion efficiency (PCE) of 13.5% has been achieved, which is among the highest efficiencies of graphene-based solar cells ever reported and approaching those of AZO-based solar cells. Besides, the active area of our solar cells reaches 45 mm(2), much larger than other highly efficient graphene-based solar cells (>10%) reported so far. Moreover, compared with AZO-based CIGS solar cells, the total reflectance of the graphene-based CIGS solar cells is decreased and the quantum efficiency of the graphene-based CIGS is enhanced in the near infrared region (NIR), which strongly support graphene as a competitive candidate material for the TCE in the CIGS solar cell. Furthermore, the graphene/PMMA film can protect the solar cell from moisture, making the graphene-based solar cells much more stable than the AZO-based solar cells.

  12. Formation of CuInSSe thin films by conventional two-stage process

    NASA Astrophysics Data System (ADS)

    Shrotriya, Vipin; Rajaram, P.

    2016-05-01

    We have fabricated Crystalline CuInSSe thin films on glass substrate by conventional two-stage process. In first stage CuInS2 thin films have been grown on glass substrate by spray pyrolysis method at constant temperature 320°C. The CuCl2, InCl3, and thiourea were used as source materials for the Cu, In, and S precursors respectively and the Cu/In ratio is kept at 1.0. In second stage the precursor films of CuInS2 are selenized to get CuInSSe. The grown thin films of CuInS2 and CuInSSe were characterized by XRD, SEM and optical studies. The average crystallite size of the CISS thin films is found to be in the range 10-20 nm, using the Scherrer formula. The band gap value of the CuInSSe films is found to be 1.26 eV.

  13. Caractérisations structurale et morphologique des couches minces de CuInS2 et d'In-S "airless spray"

    NASA Astrophysics Data System (ADS)

    Kamoun, N.; Belgacem, S.; Amlouk, M.; Bennaceur, R.; Abdelmoula, K.; Belhadj Amara, A.

    1994-03-01

    We have prepared CuInS2 thin layers by airless spray "S.P.A." in order to use them as an absorber in a photovoltaic cell. The X-ray diffraction analysis has showed that these layers are well crystallized with a privileged (112) principal orientation for a ratio of the concentrations in the pulverized solution x=frac[Cu^I][In^{III]}=1.1. After heat treatment under vacuum the crystallization have been clearly improved. The structural analysis of the thin CuInS2 layers have revealed that a secondary phases of In2S3 and In6S7 are present. Thus we have realized by the same technique thin In-S layers whose structural and morphological properties have been studied. This analysis has showed that the In-S layers are well crystallized for a ratio y=frac[In^{3+]}[S^{2-]}=0.6 in the spray solution. The In-S layers are essentially formed by a β-In2S3 material. Although the In6S7 phase appears to the detriment of β-In2S3 phase for y= 0.75. Nous avons préparé des couches minces de CuInS2, par pulvérisation chimique réactive sans air "P.S.A.", en vue de leur utilisation en tant qu'absorbeur dans un dispositif photovoltaïque. L'analyse par diffraction X a montré que ces couches sont bien cristallisées et que l'orientation principale (112) est privilégiée pour un rapport de concentrations x=frac[Cu^I]{[In^{III}]}=1,1 dans la solution à pulvériser. Après le traitement thermique sous vide la cristallisation est nettement améliorée. L'analyse structurale des couches minces de CuInS2 a révélé que ces couches renferment des phases secondaires d'In2S3 et d'In6S7. Ainsi nous avons réalisé par la même technique "P.S.A.", des couches minces d'In-S dont nous avons étudié les propriétés structurales et morphologiques, Cette analyse a montré que les couches d'In-S sont bien cristallisées. Pour un rapport de concentrations en solution de pulvérisation y=frac[In^{3+]}[S^{2-]}=0,6 les couches d'In-S sont surtout formées du matériau β-In2S3. Alors que la phase In6S7

  14. Ternary compound thin film solar cells

    NASA Technical Reports Server (NTRS)

    Kazmerski, L. L.

    1975-01-01

    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  15. Structural and optical properties of CuInS2 bulk crystals

    NASA Astrophysics Data System (ADS)

    Angelov, M.; Goldhahn, R.; Gobsch, G.; Kanis, M.; Fiechter, S.

    1994-05-01

    The optical properties of CuInS2 bulk crystals were studied by photoreflectance (PR) and photoluminescence (PL) spectroscopy in comparison with the material structure, verified by energy dispersive x-ray (EDX) microprobe analysis and x-ray diffraction. The samples have been produced by the gradient freeze technique under different sulfur pressures. It was shown by EDX that growth-induced cracking along the ingot is strongly reduced with higher sulfur pressures. The PR spectra at 80 K exhibit two well-resolved transitions. From a comparison with the reflectivity spectra at 80 K, these transitions are explained by the presence of two Wannier excitons. The fit of the spectra yields a broadening parameter of the lower-energy transition which increases approximately linearly with increasing Cu/In ratio. Thus, it is deduced that PR is sensitive to small inhomogeneities in the molecularity of the compound. In agreement with the EDX data photoluminescence indicates the material to be Cu rich. However, a continuous change of the significant PL peaks as a function of the Cu/In ratio could not be observed. According to this, PL is not well suitable to determine small inhomogeneities of the molecularity, in contrast to PR.

  16. Phase identification in the Cu-In-S system by γ-γ perturbed angular correlations

    NASA Astrophysics Data System (ADS)

    Brüssler, M.; Metzner, H.; Husemann, K.-D.; Lewerenz, H. J.

    1988-11-01

    Perturbed angular correlations (PAC's) of γ rays are applied to investigate the Cu-In-S system. The radioactive 111-111Cd tracers are incorporated in the metallic indium used as starting material for crystal growth. Cu1-xIn1+xS2 samples with varying Cu:In ratio (x=0.0, 0.03, 0.07, 0.10) were prepared and characterized by PAC's. The stoichiometric sample (x=0.0) shows cubic symmetry of the In site without tetragonal distortion. For all samples with In excess the signals of metallic In (vQ1=e2qQ/h=18 MHz, η1=0) and InS (vQ2=233 MHz, η2=0.15) appear. Consequently, a new line in the Gibb's phase triangle of the Cu-In-S system is determined. The fractions of the In and InS phases as a function of In excess are analyzed.

  17. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    PubMed Central

    2014-01-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:25520597

  18. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    NASA Astrophysics Data System (ADS)

    Zhao, Yu; Li, Hui; Zhu, Yan-Yan; Guan, Lei-Lei; Li, Yan-Li; Sun, Jian; Ying, Zhi-Feng; Wu, Jia-Da; Xu, Ning

    2014-12-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

  19. Electrodeposition of CuInSe 2 thin films and their characteristics

    NASA Astrophysics Data System (ADS)

    Al-Bassam, A. A. I.

    1999-05-01

    Polycrystalline thin films of CuInSe 2 (CIS) were deposited by the electrochemical method. Some of the physical properties such as lattice parameters, crystal structure and X-ray data of CuInSe 2 (CIS) films with different Cu/In ratios (0.49-1.1) were determined using X-ray diffractometry. A structural transition from chalcopyrite to sphalerite was observed on the electrodeposited CuInSe 2 when the compositions of the thin films were varied from a quasi-stoichiometry to indium rich. The surface morphology with different Cu/In ratios was studied using a scanning electron microscope. Quasi-stoichiometric CuInSe 2 thin films were obtained in the chalcopyrite structure with grain sizes of the matter of 0.60 μm.

  20. Effects of europium substitution for In on structure and photoelectric properties of CuIn1-xEuxTe2

    NASA Astrophysics Data System (ADS)

    Nie, Xiaomeng; Guo, Yongquan

    2016-01-01

    The structures and optical and electric properties of europium doped CuIn1-xEuxTe2 have been studied systematically using powder X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy dispersive spectrum (EDS), ultraviolet and visible spectrophotometer (UV-vis), and standard four-probe method. The studies reveal that the minor europium doping into CuIn1-xEuxTe2 could still stabilize the chalcopyrite structure in a solid solution of x=0.1. The lattice parameters are going up with increasing the content of europium in CuIn1-xEuxTe2 due to the size effect at In site. The structural refinement confirms that Eu partly substitutes for In and occupies the 4b crystal position. SEM morphologies show that the europium doping into CuIn1-xEuxTe2 can fine the grains from the largely agglomerated state to the uniformly separated state. The electrical resistivities of single phase CuIn1-xEuxTe2 follow a mixture model of hopping conductivity and variable range hopping conductivity. The absorption band-gaps of CuIn1-xEuxTe2 at room temperature tend to increase with increasing Eu content. CuIn1-xEuxTe2 might be a good candidate for photovoltaic cell.

  1. Composition-dependent photoluminescence properties of CuInS2/ZnS core/shell quantum dots

    NASA Astrophysics Data System (ADS)

    Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

    2016-06-01

    CuInS2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

  2. Synthesis Characterization and Decomposition Studies of tris[N-N-dibenzyidithocarbaso)Indium (III) Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

    NASA Technical Reports Server (NTRS)

    Hehemann, David G.; Lau, J. Eva; Harris, Jerry D.; Hoops, Michael D.; Duffy, Norman V.

    2005-01-01

    This paper presents the results of the synthesis characterization and decomposition studies of tris[N-N-dibenzyidithocarbaso)Indium (III) with chemical spray deposition of polycrystalline CuInS2 on Copper Films.

  3. Device modeling and simulation of the performance of Cu(In 1- x,Ga x)Se 2 solar cells

    NASA Astrophysics Data System (ADS)

    Song, Jiyon; Li, Sheng S.; Huang, C. H.; Crisalle, O. D.; Anderson, T. J.

    2004-01-01

    Device modeling and simulation studies of a Cu(In 1- x,Ga x)Se 2 (CIGS) thin film solar cell have been carried out. A variety of graded band-gap structures, including space charge region (SCR) grading, back surface region grading, and double grading of the CIGS absorber layer, are examined. The device physics and performance parameters for different band-gap profiles were analyzed. Based on the simulation results, an optimal graded band-gap structure for the CIGS solar cell is proposed. The performance of the optimally graded band-gap cell is superior to that of the uniform band-gap cell. The SCR grading of the CIGS absorber layer improves the open-circuit voltage ( Voc) without significantly sacrificing the short-circuit current density ( Jsc) compared to the uniform band-gap CIGS. The back surface grading enhances both Voc and Jsc. An optimal graded band-gap profile, such as a double grading consisting of the SCR grading and back surface grading, improves significantly the efficiency up to 19.83% AM1.5G compared to the uniform band-gap profile with 15.42% efficiency. A comparison of the simulation results with published data for the CIGS cells shows an excellent agreement of photo-current density-voltage and quantum efficiency characteristics.

  4. One-pot synthesis of CuInS2 nanocrystals using different anions to engineer their morphology and crystal phase.

    PubMed

    Tang, Aiwei; Hu, Zunlan; Yin, Zhe; Ye, Haihang; Yang, Chunhe; Teng, Feng

    2015-05-21

    A simple one-pot colloidal method has been described to engineer ternary CuInS2 nanocrystals with different crystal phases and morphologies, in which dodecanethiol is chosen as the sulfur source and the capping ligands. By a careful choice of the anions in the metal precursors and manipulation of the reaction conditions including the reactant molar ratios and the reaction temperature, CuInS2 nanocrystals with chalcopyrite, zincblende and wurtzite phases have been successfully synthesized. The type of anion in the metal precursors has been found to be essential for determining the crystal phase and morphology of the as-obtained CuInS2 nanocrystals. In particular, the presence of Cl(-) ions plays an important role in the formation of CuInS2 nanoplates with a wurtzite-zincblende polytypism structure. In addition, the molar ratios of Cu to In precursors have a significant effect on the crystal phase and morphology, and the intermediate Cu2S-CuInS2 heteronanostructures are formed which are critical for the anisotropic growth of CuInS2 nanocrystals. Furthermore, the optical absorption results of the as-obtained CuInS2 nanocrystals exhibit a strong dependence on the crystal phase and size.

  5. Enhanced Optical Properties of Cu-In-S Quantum Dots with Zn Addition

    NASA Astrophysics Data System (ADS)

    Chi, Tran Thi Kim; Thuy, Ung Thi Dieu; Huyen, Tran Thi Thuong; Thuy, Nguyen Thi Minh; Le, Nguyen Thi; Liem, Nguyen Quang

    2016-05-01

    Quaternary Cu-In-Zn-S (CIZS) alloy quantum dots (QDs) have been chemically synthesized by a hydrothermal method at 120°C and heating-up method using diesel as a high-boiling-point reaction solvent at 220°C. The resulting CuInS2 (CIS) QDs with small Zn addition of 10% into the precursors possessed tetragonal structure, spherical morphology, and small size of 3 nm, as characterized by x-ray diffraction (XRD) analysis, Raman spectroscopy, and high-resolution transmission electron microscopy (HR-TEM). The absorption (Abs) and photoluminescence (PL) spectra of the CIZS alloy QDs both shifted to shorter wavelength (higher energy) in comparison with CIS QDs. The absorption edge and PL peak of the CIZS alloy QDs shifted to shorter wavelength, and the corresponding intensity increased with decreasing temperature in the range of 15 K to 300 K.

  6. Cadmium and Zinc Alloyed Cu-In-S Nanocrystals and Their Optical Properties

    PubMed Central

    Huang, Liming; Zhu, Xiaoshan; Publicover, Nelson G.; Hunter, Kenneth W.; Ahmadiantehrani, Mojtaba; de Bettencourt-Dias, Ana; Bell, Thomas W.

    2013-01-01

    Cadmium (Cd) and zinc (Zn) alloyed copper-indium-sulfide (Cu-In-S or CIS) nanocrystals (NCs) in several nanometers were prepared using thermal decomposition methods, and the effects of Cd and Zn on optical properties, including the tuning of NC photoluminescence (PL) wavelength and quantum yield (QY), were investigated. It was found that incorporation of Cd into CIS enhances the peak QY of NCs whereas zinc alloying diminishes the peak. In contrast with Zn alloying, Cd alloying does not result in a pronounced luminescence blue shift. The further PL decay study suggests that Cd alloying reduces surface or intrinsic defects whereas alloying with Zn increases the overall number of defects. PMID:24409089

  7. Synthesis of cadmium-free quantum dots based on CuInS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Novikova, Anastasiya S.; Goftman, Valentina V.; Goryacheva, Irina Y.

    2016-04-01

    We report an efficient synthesis Cd-free CuInS2/ZnS (CIS/ZnS) quantum dots (QDs) using low toxic precursors and investigation of their optical properties. The nanocrystals have been obtained via reaction between the acetate salts of the corresponding metals and elemental sulfur in the presence of dodecanethiol in octadecene media at 220°C. Influence of various experimental variables, including temperature, time, ratio of Cu and In precursors were investigated. Thus, it was shown that the photoluminescence (PL) emission wavelength can be tuned by conveniently changing the stoichiometric ratio of the components. The plain CIS nanocrystals did show PL emission but with quite low PL quantum yield (QY). In order to increase the QY of QD luminescence by compensation of the surface defects of QDs cores, the process of covering with ZnS shells was done. During shelling process, increasing of QY and blue shift of emission maximum were detected.

  8. The determination of extinction coefficient of CuInS2, and ZnCuInS3 multinary nanocrystals.

    PubMed

    Qin, Lei; Li, Dongze; Zhang, Zhuolei; Wang, Kefei; Ding, Hong; Xie, Renguo; Yang, Wensheng

    2012-10-21

    A pioneering work for determining the extinction coefficient of colloidal semiconductor nanocrystals (NCs) has been cited over 1500 times (W. Yu, W. Guo, X. G. Peng, Chem. Mater., 2003, 15, 2854-2860), indicating the importance of calculating NC concentration for further research and applications. In this study, the size-dependent nature of the molar extinction coefficient of "greener" CuInS(2) and ZnCuInS(3) NCs with emission covering the whole visible to near infrared (NIR) is presented. With the increase of NC size, the resulting quantitative values of the extinction coefficients of ternary CuInS(2) and quaternary ZnCuInS(3) NCs are found to follow a power function with exponents of 2.1 and 2.5, respectively. Obviously, a larger value of extinction coefficient is observed in quaternary NCs for the same size of particles. The difference of the extinction coefficient from both samples is clearly demonstrated due to incorporating ZnS with a much larger extinction coefficient into CuInS(2) NCs.

  9. Synthesis of highly photo-stable CuInS2/ZnS core/shell quantum dots

    NASA Astrophysics Data System (ADS)

    Ma, Jingwei; Liu, Mingming; Li, Zhichun; Li, Liang

    2015-09-01

    CuInS2 quantum dots are considered near-ideal fluorophores based on their bright emission and low toxicity. However, CuInS2 quantum dots are still bothered by their sensitivity to surface chemistry and chemical environment. Traditionally, the CIS QDs require an additional coating process to be encapsulated inside silica sphere or organic polymer. Up till now, few works have been made concerning improving the intrinsic stability of CIS QDs. In an effort to improve the stability of CuInS2 quantum dots, we came up with a new method by increasing the ZnS shell thickness. These QDs were characterized by photoluminescence, HRTEM, XRD and XRF analysis. We investigated the influence of ZnS shell thickness on the ambient stability of CIS/ZnS QDs. The results demonstrated that a thicker ZnS shell helped significantly improve both photostability and chemical stability of the QDs. Finally, the thick shell QDs were dispersed into transparent polymer matrix and fabricated into a LED device, which also gave much more stability compared with conventional QDs.

  10. Small GSH-Capped CuInS2 Quantum Dots: MPA-Assisted Aqueous Phase Transfer and Bioimaging Applications.

    PubMed

    Zhao, Chuanzhen; Bai, Zelong; Liu, Xiangyou; Zhang, Yijia; Zou, Bingsuo; Zhong, Haizheng

    2015-08-19

    An efficient ligand exchange strategy for aqueous phase transfer of hydrophobic CuInS2/ZnS quantum dots was developed by employing glutathione (GSH) and mercaptopropionic acid (MPA) as the ligands. The whole process takes less than 20 min and can be scaled up to gram amount. The material characterizations show that the final aqueous soluble samples are solely capped with GSH on the surface. Importantly, these GSH-capped CuInS2/ZnS quantum dots have small size (hydrodynamic diameter <10 nm), moderate fluorescent properties (up to 34%) as well as high stability in aqueous solutions (stable for more than three months in 4 °C without any significant fluorescence quenching). Moreover, this ligand exchange strategy is also versatile for the aqueous phase transfer of other hydrophobic quantum dots, for instance, CuInSe2 and CdSe/ZnS quantum dots. We further demonstrated that GSH-capped quantum dots could be suitable fluorescence markers to penetrate cell membrane and image the cells. In addition, the GSH-capped CuInS2 quantum dots also have potential use in other fields such as photocatalysis and quantum dots sensitized solar cells.

  11. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots

    PubMed Central

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-01-01

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy. PMID:26642815

  12. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots.

    PubMed

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-01-01

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy. PMID:26642815

  13. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots.

    PubMed

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-12-08

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.

  14. Large Stokes Shift and High Efficiency Luminescent Solar Concentrator Incorporated with CuInS2/ZnS Quantum Dots

    NASA Astrophysics Data System (ADS)

    Li, Chen; Chen, Wei; Wu, Dan; Quan, Dunhang; Zhou, Ziming; Hao, Junjie; Qin, Jing; Li, Yiwen; He, Zhubing; Wang, Kai

    2015-12-01

    Luminescent solar concentrator (LSC) incorporated with quantum dots (QDs) have been widely regarded as one of the most important development trends of cost-effective solar energy. In this study, for the first time we report a new QDs-LSC integrated with heavy metal free CuInS2/ZnS core/shell QDs with large Stokes shift and high optical efficiency. The as-prepared CuInS2/ZnS QDs possess advantages of high photoluminescence quantum yield of 81% and large Stocks shift more than 150 nm. The optical efficiency of CuInS2/ZnS QDs-LSC reaches as high as 26.5%. Moreover, the power conversion efficiency of the QDs-LSC-PV device reaches more than 3 folds to that of pure PMMA-PV device. Furthermore, the PV device is able to harvest 4.91 folds solar energy with the assistance of this new CuInS2/ZnS QDs-LSC for the same size c-Si PV cell. The results demonstrate that this new CuInS2/ZnS QDs-LSC provides a promising way for the high efficiency, nonhazardous and low cost solar energy.

  15. Chemical deposition and characterization of copper indium disulphide thin films

    NASA Astrophysics Data System (ADS)

    Pathan, H. M.; Lokhande, C. D.

    2004-12-01

    A simple chemical deposition method was used to prepare copper indium disulphide thin films. The method is based on sequential immersion of substrate into different cationic and anionic precursor solutions and rinsing before every immersion with double distilled water. In the present investigation, CuInS 2 films have been deposited using chemical deposition method. These films were characterized for their structural, surface morphological, compositional and electrical properties by using X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Rutherford back scattering (RBS), electrical resistivity and thermoemf measurement techniques.

  16. Processing and modeling issues for thin-film solar cell devices

    NASA Astrophysics Data System (ADS)

    Birkmire, R. W.; Phillips, J. E.; Buchanan, W. A.; Hegedus, S. S.; McCandless, B. E.; Shafarman, W. N.

    1995-06-01

    This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn(1-x)Ga(x)Se2, and CdTe. Accomplishments during this phase include development of equations and reaction rates for the formation of CuIn(1-x)Ga(x)Se2 films by selenization, fabrication of a 15% efficient CuIn(1-x)Ga(x)Se2 cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl2 in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing approximately 8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn(1-x)Ga(x)Se2 devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described.

  17. Reduced Carrier Recombination in PbS - CuInS2 Quantum Dot Solar Cells

    PubMed Central

    Sun, Zhenhua; Sitbon, Gary; Pons, Thomas; Bakulin, Artem A.; Chen, Zhuoying

    2015-01-01

    Energy loss due to carrier recombination is among the major factors limiting the performance of TiO2/PbS colloidal quantum dot (QD) heterojunction solar cells. In this work, enhanced photocurrent is achieved by incorporating another type of hole-transporting QDs, Zn-doped CuInS2 (Zn-CIS) QDs into the PbS QD matrix. Binary QD solar cells exhibit a reduced charge recombination associated with the spatial charge separation between these two types of QDs. A ~30% increase in short-circuit current density and a ~20% increase in power conversion efficiency are observed in binary QD solar cells compared to cells built from PbS QDs only. In agreement with the charge transfer process identified through ultrafast pump/probe spectroscopy between these two QD components, transient photovoltage characteristics of single-component and binary QDs solar cells reveal longer carrier recombination time constants associated with the incorporation of Zn-CIS QDs. This work presents a straightforward, solution-processed method based on the incorporation of another QDs in the PbS QD matrix to control the carrier dynamics in colloidal QD materials and enhance solar cell performance. PMID:26024021

  18. CuInS(2) solar cells by air-stable ink rolling.

    PubMed

    Weil, Benjamin D; Connor, Stephen T; Cui, Yi

    2010-05-19

    Solution-based deposition techniques are widely considered to be a route to low-cost, high-throughput photovoltaic device fabrication. In this report, we establish a methodology for a highly scalable deposition process and report the synthesis of an air-stable, vulcanized ink from commercially available precursors. Using our air-stable ink rolling (AIR) process, we can make solar cells with an absorber layer that is flat, contaminant-free, and composed of large-grained CuInS(2). The current-voltage characteristics of the devices were measured in the dark and under 100 mW/cm(2) illumination intensity, and the devices were found to have J(sc) = 18.49 mA/cm(2), V(oc) = 320 mV, FF = 0.37, and eta = 2.15%. This process has the ability to produce flat, contaminant-free, large-grained films similar to those produced by vacuum deposition, and its versatility should make it capable of producing a variety of materials for electronic, optoelectronic, and memory devices.

  19. Photoluminescence of CuInS2 nanocrystals: effect of surface modification

    NASA Astrophysics Data System (ADS)

    Kim, Young-Kuk; Cho, Young-Sang; Chung, Kookchae; Choi, Chul-Jin

    2011-09-01

    We have synthesized highly luminescent Cu-In-S(CIS) nanocrystals (NCs) by heating the mixture of metal carboxylates and alkylthiol under inert atmosphere. We modified the surface of CIS NCs with zinc carboxylate and subsequent injection of alkylthiol. As a result of the surface modification, highly luminescent CIS@ZnS core/shell nanocrystals were synthesized. The luminescence quantum yield (QY) of best CIS@ZnS NCs was above 50%, which is 10 times higher than the initial QY of CIS NCs before surface modification (QY=3%). Detailed study on the luminescence mechanism implies that etching of the surface of NCs by dissociated carboxylate group (CH3COO-) and formation of epitaxial shell by Zn with sulfur from alkylthiol efficiently removed the surface defects which are known to be major non-radiative recombination sites in semiconductor nanocrystals. In this study, we developed a novel surface modification route for monodispersed highly luminescent Cu-In-S NCs with less toxic and highly stable precursors. Investigation with the timeand the temperature-dependent photoluminescence showed that the trap related emission was minimized by surface modification and the donor-acceptor pair recombination was enhanced by controlling copper stoichiometry.xb

  20. Self-organized antireflection CuIn(S,Se)2 nano-protrusions on flexible substrates by ion erosion based on CuInS2 nanocrystal precursor inks

    NASA Astrophysics Data System (ADS)

    Yen, Yu-Ting; Wang, Yi-Chung; Chen, Chia-Wei; Tsai, Hung-Wei; Chen, Yu-Ze; Hu, Fan; Chueh, Yu-Lun

    2015-11-01

    In this work, an approach to achieve surface nano-protrusions on a chalcopyrite CuIn(S,Se)2 thin film was demonstrated. Home-made CuInS2 nanocrystals with average diameter of 20 nm were prepared and characterized. By applying ion erosion process on the CuIn(S,Se)2 film, large-area self-aligned nano-protrusions can be formed. Interestingly, the process can be applied on flexible substrate where the CuIn(S,Se)2 film remains intact with no visible cracking after several bending tests. In addition, reflectance spectra reveal the extraordinary anti-reflectance characteristics of nano-protrusions on the CuIn(S,Se)2 film with the incident light from 350 to 2000 nm. A 36-cm2 CuIn(S,Se)2 film with nano-protrusions on flexible molybdenum foil substrate has been demonstrated, which demonstrated the feasibility of developing low cost with a high optical absorption CuIn(S,Se)2 flexible thin film.

  1. Investigations of CuInSe sub 2 thin films and contacts

    SciTech Connect

    Nicolet, M.A. )

    1991-10-01

    This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

  2. Analysis of Electrical Characteristics of Thin Film Photovoltaic Cells

    NASA Technical Reports Server (NTRS)

    Kasick, Michael P.

    2004-01-01

    Solar energy is the most abundant form of energy in many terrestrial and extraterrestrial environments. Often in extraterrestrial environments sunlight is the only readily available form of energy. Thus the ability to efficiently harness solar energy is one of the ultimate goals in the design of space power systems. The essential component that converts solar energy into electrical energy in a solar energy based power system is the photovoltaic cell. Traditionally, photovoltaic cells are based on a single crystal silicon absorber. While silicon is a well understood technology and yields high efficiency, there are inherent disadvantages to using single crystal materials. The requirements of weight, large planar surfaces, and high manufacturing costs make large silicon cells prohibitively expensive for use in certain applications. Because of silicon s disadvantages, there is considerable ongoing research into alternative photovoltaic technologies. In particular, thin film photovoltaic technologies exhibit a promising future in space power systems. While they are less mature than silicon, the better radiation hardness, reduced weight, ease of manufacturing, low material cost, and the ability to use virtually any exposed surface as a substrate makes thin film technologies very attractive for space applications. The research group lead by Dr. Hepp has spent several years researching copper indium disulfide as an absorber material for use in thin film photovoltaic cells. While the group has succeeded in developing a single source precursor for CuInS2 as well as a unique method of aerosol assisted chemical vapor deposition, the resulting cells have not achieved adequate efficiencies. While efficiencies of 11 % have been demonstrated with CuInS2 based cells, the cells produced by this group have shown efficiencies of approximately 1 %. Thus, current research efforts are turning towards the analysis of the individual layers of these cells, as well as the junctions between

  3. Synthesis of ternary CuInS(2)/ZnS quantum dot bioconjugates and their applications for targeted cancer bioimaging.

    PubMed

    Yong, Ken-Tye; Roy, Indrajit; Hu, Rui; Ding, Hong; Cai, Hongxing; Zhu, Jing; Zhang, Xihe; Bergey, Earl J; Prasad, Paras N

    2010-03-01

    This contribution introduces the use of cadmium-free CuInS(2) quantum dots (QDs) for targeted and multiplexed optical imaging of tumors in mice. CuInS(2)/ZnS QDs were synthesized in a non-aqueous phase using the hot colloidal synthesis method. Previous challenges involving stable aqueous dispersion of highly luminescent CuInS(2)/ZnS QDs have been overcome by encapsulating them within functionalized phospholipid micelles, which also facilitated their conjugation with folic acid for targeted delivery. Luminescence signals of QDs of multiple colors were readily differentiated from background autofluorescence in whole animal optical imaging. In addition, two-photon excitation studies revealed that the prepared water-dispersible QDs are suitable for two-photon in vitro and in vivo imaging. This study demonstrates the important key steps in realizing of the potential of CuInS(2) QDs as low-toxicity, photostable, cadmium-free and highly luminescent probes for cancer detection and sensing.

  4. Pulsed laser deposition of CuInS2 quantum dots on one-dimensional TiO2 nanorod arrays and their photoelectrochemical characteristics

    NASA Astrophysics Data System (ADS)

    Han, Minmin; Chen, Wenyuan; Guo, Hongjian; Yu, Limin; Li, Bo; Jia, Junhong

    2016-06-01

    In the typical solution-based synthesis of colloidal quantum dots (QDs), it always resorts to some surface treatment, ligand exchange processing or post-synthesis processing, which might involve some toxic chemical regents injurious to the performance of QD sensitized solar cells. In this work, the CuInS2 QDs are deposited on the surface of one-dimensional TiO2 nanorod arrays by the pulsed laser deposition (PLD) technique. The CuInS2 QDs are coated on TiO2 nanorods without any ligand engineering, and the performance of the obtained CuInS2 QD sensitized solar cells is optimized by adjusting the laser energy. An energy conversion efficiency of 3.95% is achieved under one sun illumination (AM 1.5, 100 mW cm-2). The improved performance is attributed to enhanced absorption in the longer wavelength region, quick interfacial charge transfer and few chance of carrier recombination with holes for CuInS2 QD-sensitized solar cells. Moreover, the photovoltaic device exhibits high stability in air without any specific encapsulation. Thus, the PLD technique could be further applied for the fabrication of QDs or other absorption materials.

  5. Three-dimensional morphology of CuInS2:P3HT hybrid blends for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Krause, Christopher; Scheunemann, Dorothea; Parisi, Jürgen; Borchert, Holger

    2015-11-01

    Despite potential advantages, the performance of hybrid solar cells with colloidal nanocrystals remains low compared to pure organic solar cells, in particular, when Cd- and Pb-free nanocrystals are employed. To understand this discrepancy, we analyzed possible limiting factors of the performance of hybrid solar cells with CuInS2 nanoparticles and the polymer poly(3-hexylthiophene) (P3HT). Optimizing the thickness of the active layer indicated that charge transport limits the performance of the solar cells. Since charge transport is among others influenced by the morphology of the bulk heterojunction layer, we performed a detailed analysis of the blend morphology. Therefore, we used electron tomography which provides three-dimensional information on the interpenetrating network formed by the hybrid CuInS2:P3HT system. Using statistical methods, we analyzed the distribution of the nanoparticles inside the polymer matrix and the structure of the percolation paths. We found that the morphology appears well suited for application in hybrid solar cells, meaning that other factors must be the bottleneck. Therefore, we investigated in a second step the influence of a post-deposition ligand exchange with acetic acid. This strategy resulted in a strong relative improvement of the solar cell performance, although absolute performance parameters remain low in comparison to hybrid solar cells with colloidal cadmium or lead chalcogenide nanocrystals.

  6. Preparation and characterization of CuInS2 absorber layers by sol-gel method for solar cell applications

    NASA Astrophysics Data System (ADS)

    Amerioun, M. H.; Ghazi, M. E.; Izadifard, M.; Bahramian, B.

    2016-04-01

    CuInSe2 , CuInS2 ( CIS2 and CuInGaS2 alloys and their compounds with band gaps between 1.05 and 1.7eV are absorbance materials based on chalcopyrite, in which, because of their suitable direct band gap, high absorbance coefficient and short carrier diffusion are used as absorbance layers in solar cells. In this work, the effects of decrease in p H and thickness variation on characteristics of the CIS2 absorber layers, grown by spin coating on glass substrates, are investigated. Furthermore by using thiourea as a sulphur source in solvent, the sulfurization of layers was done easier than other sulfurization methods. Due to the difficulty in dissolving thiourea in the considered solvent that leads to a fast deposition during the dissolving process, precise conditions are employed in order to prepare the solution. In fact, this procedure can facilitate the sulfurization process of CuIn layers. The results obtained from this investigation indicate reductions in absorbance and band gap in the visible region of the spectrum as a result of decrease in p H. Finally, conductivity of layers is studied by the current vs. voltage curve that represents reduction of electrical resistance with decrease and increase in p H and thickness, respectively.

  7. A High-Yield Synthesis of Chalcopyrite CuIn S 2 Nanoparticles with Exceptional Size Control

    DOE PAGESBeta

    Sun, Chivin; Gardner, Joseph S.; Shurdha, Endrit; Margulieux, Kelsey R.; Westover, Richard D.; Lau, Lisa; Long, Gary; Bajracharya, Cyril; Wang, Chongmin; Thurber, Aaron; et al

    2009-01-01

    We repormore » t high-yield and efficient size-controlled syntheses of Chalcopyrite CuIn S 2 nanoparticles by decomposing molecular single source precursors (SSPs) via microwave irradiation in the presence of 1,2-ethanedithiol at reaction temperatures as low as 100 ° C and times as short as 30 minutes. The nanoparticles sizes were 1.8 nm to 10.8 nm as reaction temperatures were varied from 100 ° C to 200 ° C with the bandgaps from 2.71 eV to 1.28 eV with good size control and high yields (64%–95%). The resulting nanoparticles were analyzed by XRD, UV-Vis, ICP-OES, XPS, SEM, EDS, and HRTEM. Titration studies by 1 H NMR using SSP 1 with 1,2-ethanedithiol and benzyl mercaptan were conducted to elucidate the formation of Chalcopyrite CuIn S 2 nanoparticles.« less

  8. Synthesis, Characterization and its Photoluminescence Properties of Group I-III-VI2 CuInS2 nanocrystals

    NASA Astrophysics Data System (ADS)

    Oda, Masaru; Miyaoka, Tomotari; Yamada, Shuhei; Tani, Toshiro

    We report the synthesis, characterization, and photoluminescence (PL) properties of colloidal I-III-VI2 CuInS2 and CuInS2/ZnS nanocrystals (NCs). Absorption shoulder and PL bands of the NCs are located at higher energy than those of band gap energy of bulk crystals due to a quantum-confinement effect. The PL band has a relatively large Stokes-shift, broad linewidth, and long decay-time, which suggests that the PL originates from a recombination of confined-excitions associated with donor(s) and/or acceptor(s). We found that quantum yield of the PL depends strongly on the photon-energy of excitation light and that it is up to 40-50% in resonant excitation at the energy positions corresponding to the absorption shoulder. Detailed properties and possible dynamics will be described. We also present preliminary results of PL properties focused on single NCs. There exist highluminescent NCs exhibiting so-called PL blinking as similar with II-VI NCs, while the others are dark NCs. 73.21.La, 78.47.jd, 78.67.Bf, 78.67.Hc

  9. CuInS2 quantum dot-sensitized TiO2 nanorod array photoelectrodes: synthesis and performance optimization

    PubMed Central

    2012-01-01

    CuInS2 quantum dots (QDs) were deposited onto TiO2 nanorod arrays for different cycles by using successive ionic layer adsorption and reaction (SILAR) method. The effect of SILAR cycles on the light absorption and photoelectrochemical properties of the sensitized photoelectrodes was studied. With optimization of CuInS2 SILAR cycles and introduction of In2S3 buffer layer, quantum dot-sensitized solar cells assembled with 3-μm thick TiO2 nanorod film exhibited a short-circuit current density (Isc) of 4.51 mA cm−2, an open-circuit voltage (Voc) of 0.56 V, a fill factor (FF) of 0.41, and a power conversion efficiency (η) of 1.06%, respectively. This study indicates that SILAR process is a very promising strategy for preparing directly anchored semiconductor QDs on TiO2 nanorod surface in a straightforward but controllable way without any complicated fabrication procedures and introduction of a linker molecule. PMID:23181940

  10. Investigations of CuInSe2 Thin Films and Contacts: Annual Subcontract Report, 1 January 1990 - 28 February 1991

    SciTech Connect

    Nicolet, M. A.

    1991-10-01

    This report describes research into electrical contacts for copper indium diselenide (CulnSe2) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CulnSe2 thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments.

  11. Advances in thin-film solar cells for lightweight space photovoltaic power

    NASA Technical Reports Server (NTRS)

    Landis, Geoffrey A.; Bailey, Sheila G.; Flood, Dennis J.

    1989-01-01

    The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuIn Se2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuIn Se2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

  12. CONTROLLING THE CHARACTERISTICS OF LASER LIGHT: Passive mode locking of neodymium lasers using glasses with CuInS2xSe2(1-x) microcrystallites

    NASA Astrophysics Data System (ADS)

    Yumashev, K. V.; Mikhaĭlov, V. P.; Bondar', I. V.; Demchuk, M. I.; Prokoshin, P. V.; Dashyan, R. S.

    1993-09-01

    We report passive mode locking of Nd:YAG and Nd:YAlO3 lasers using glasses with microcrystallites of CuInS2xSe2(1-x). We show that it is possible for these glasses to act as saturable absorbers in lasers with active negative feedback. We have obtained ultrashort pulses with a duration of 16 ps and an energy of 20 mJ.

  13. Highly stable CuInS2@ZnS:Al core@shell quantum dots: the role of aluminium self-passivation.

    PubMed

    Rao, Pinhua; Yao, Wei; Li, Zhichun; Kong, Long; Zhang, Wenqi; Li, Liang

    2015-05-25

    A simple approach was introduced to enhance the photostability of CuInS2@ZnS core@shell quantum dots (QDs) by doping aluminium into the ZnS shell. Aluminium in the as-prepared QDs was oxidized to Al2O3, which formed a passivation oxide layer that effectively prevents photo-degradation of QDs during long-term light irradiation. PMID:25913396

  14. Highly stable CuInS2@ZnS:Al core@shell quantum dots: the role of aluminium self-passivation.

    PubMed

    Rao, Pinhua; Yao, Wei; Li, Zhichun; Kong, Long; Zhang, Wenqi; Li, Liang

    2015-05-25

    A simple approach was introduced to enhance the photostability of CuInS2@ZnS core@shell quantum dots (QDs) by doping aluminium into the ZnS shell. Aluminium in the as-prepared QDs was oxidized to Al2O3, which formed a passivation oxide layer that effectively prevents photo-degradation of QDs during long-term light irradiation.

  15. Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation

    SciTech Connect

    Mise, Takahiro; Nakada, Tokio

    2012-09-15

    The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

  16. Polycrystalline thin film materials and devices

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. . Inst. of Energy Conversion)

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  17. Development of CIGS2 Thin Films on Ultralightweight Flexible Large Area Foil Sunstrates

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Gade, Vivek S.; Kadam, Ankur A.; Jahagirdar, Anant H.; Kulkarni, Sachin S.; Bet, Sachin M.

    2005-01-01

    The development of thin film solar cells is aimed at reducing the costs for photovoltaic systems. Use of thin film technology and thin foil substrate such as 5-mil thick stainless steel foil or 1-mil thick Ti would result in considerable costs savings. Another important aspect is manufacturing cost. Current single crystal technology for space power can cost more than $ 300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn1-xGaxS2 (CIGS2), CuIn(1-x)Ga(x)Se(2-y)S(y) (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite for example, the array manufacturing cost alone may exceed $ 2 million. Moving to thin film technology could reduce this expense to less than $ 500K. Earlier publications have demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6 in x 4 in) substrates. This paper presents the developmental study of achieving stress free Mo coating; uniform coatings of Mo back contact and metallic precursors. The paper also presents the development of sol gel process, refurbishment of selenization/sulfurization furnace, chemical bath deposition (CBD) for n-type CdS and scrubber for detoxification of H2S and H2Se gases.

  18. Sequential Sputtering/Selenization Technique for the Growth of CuInSe2 Thin Films

    NASA Astrophysics Data System (ADS)

    Nakada, Tokio; Kunioka, Akio

    1998-09-01

    We have proposed a sequential sputtering/selenization technique and apparatus for the growth of CuInSe2 (CIS)-based thin films. The apparatus consists of a cylindrical rotating drum for holding substrates and three horizontally interconnected subchambers for Cu, In, and Se fluxes. The serious problem associated with hybrid sputtering of metal target contamination by Se flux has been greatly reduced by the current geometric design. In this method, a very thin Cu/In stacked layer is first sputter-deposited, and then selenized with thermally evaporated Se vapor at each rotation of the drum. Polycrystalline CIS films for solar cells were grown by sequentially repeating these steps, which prevented the formation of the micron-sized voids usually observed in CIS-based thin films grown by selenization.

  19. Structural, optical, and electrical properties of pulsed laser deposition CIGSS thin films

    NASA Astrophysics Data System (ADS)

    Xu, Yan-Bin; Kang, Y. Zhen-Feng; Fan, Yue; Xiao, Ling-ling; Bo, Qing-Rui; Ding, Tie-Zhu

    2015-12-01

    High-quality CuIn0.75Ga0.25(Se0.75S0.25)2 (CIGSS) thin films were synthesized on the soda-lime glass (SLG) substrates by pulsed laser deposition. The structural and optical properties of CIGSS thin films were studied by experiments and theoretical calculations. XRD result reveals that the films are of chalcopyrite structure. The experiments and theory show that CIGSS is a semiconductor with a direct band gap. The direct band gap energy of the deposited CIGSS thin films are in the solar energy range. The band structure and density of states of the CIGSS crystals were studied by the first principles density functional theory. The experimental data and theoretical data have demonstrated good agreement.

  20. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael; Banger, Kal; Harris, Jerry; Hepp, Aloysius

    2003-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  1. CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2004-01-01

    Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) prepared in-house. Films with either (112) or (204/220) preferred orientation were obtained, and compositional analysis showed that (112)-oriented films contained more copper than (204/220)-oriented films. Using X-ray diffraction, the signature of chalcopyrite structure was often confirmed for (112)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always accompanied by a secondary phase, which was identified as an unknown In-rich compound from the results of post-growth annealing, etching experiments, and Raman spectroscopic data. By increasing Cu to In ratio in the film, (112)-oriented films were obtained with a maximum grain size of about 0.5 micrometers, and their X-ray diffractions did not show any observable signature of the In secondary phase. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 omega cm and 30 omega cm, and an optical band gap of 1.46eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

  2. Bright, stable, and water-soluble CuInS2/ZnS nanocrystals passivated by cetyltrimethylammonium bromide

    NASA Astrophysics Data System (ADS)

    Lee, Jun; Han, Chang-Soo

    2015-03-01

    We report a highly bright and stable aqueous dispersion of CuInS2/ZnS (CIS/ZnS) nanocrystals (NCs) using surfactant-assisted microemulsion and cold treatment. CIS/ZnS NCs were facilely synthesized via a stepwise, consecutive hybrid flow reactor approach. To stabilize the optical properties of hydrophobic CIS/ZnS NCs, cetyltrimethylammonium bromide (CTAB) was chosen as a matrix for aqueous phase transfer. As the result, a high quantum yield (QY) of 56.0% and excellent photostability were acquired in aqueous media. For removing excessive surfactants, cold treatment (4°C) of the CTAB-water solution was adopted to prevent further agglomeration of CIS/ZnS NCs, which could secure high stability over 6 months (less 2% reduction in QY). The optical features and structure of the obtained CTAB stabilized CIS/ZnS (CTAB-CIS/ZnS) NCs have been characterized by UV-vis and photoluminescence (PL) spectroscopies, XRD, XPS, EDX, and TEM. The high stability and PL of water soluble CTAB-CIS/ZnS NCs suggest their potential in nanoelectronics and bioapplications.

  3. High efficiency copper ternary thin film solar cells

    SciTech Connect

    Basol, B.M.; Kapur, V.K. )

    1991-04-01

    This report describes work to develop a high efficiency, thin film CuInSe{sub 2} solar cell using a potentially low-cost process. The technique used in this development program is a two-stage process. The two-stage process involves depositing the metallic elements of the CuInSe{sub 2} compound (i.e., Cu and In) on a substrate in the form of stacked layers, and then selenizing this stacked metallic film in an atmosphere containing Se. Early results showed that the electrodeposition/selenization technique could yield CuInSe{sub 2} films with good electrical and optical properties on small-area substrates. This report concentrates on the later half of the research effort; this portion was directed toward developing a two-stage process using evaporated Cu-In layers. The selenization technique has the potential of yielding solar cells with efficiencies in excess of 15 percent. 7 refs., 12 figs.

  4. Aqueous Solution-Phase Selenized CuIn(S,Se)2 Thin Film Solar Cells Annealed under Inert Atmosphere.

    PubMed

    Oh, Yunjung; Yang, Wooseok; Kim, Jimin; Woo, Kyoohee; Moon, Jooho

    2015-10-14

    A nonvacuum solution-based approach can potentially be used to realize low cost, roll-to-roll fabrication of chalcopyrite CuIn(S,Se)2 (CISSe) thin film solar cells. However, most solution-based fabrication methods involve highly toxic solvents and inevitably require sulfurization and/or postselenization with hazardous H2S/H2Se gases. Herein, we introduce novel aqueous-based Cu-In-S and Se inks that contain an amine additive for producing a high-quality absorber layer. CISSe films were fabricated by simple deposition of Cu-In-S ink and Se ink followed by annealing under an inert atmosphere. Compositional and phase analyses confirmed that our simple aqueous ink-based method facilitated in-site selenization of the CIS layer. In addition, we investigated the molecular structures of our aqueous inks to determine how crystalline chalcopyrite absorber layers developed without sulfurization and/or postselenization. CISSe thin film solar cells annealed at 550 °C exhibited an efficiency of 4.55% under AM 1.5 illumination. The low-cost, nonvacuum method to deposit chalcopyrite absorber layers described here allows for safe and simple processing of thin film solar cells.

  5. Inkjet Printed Metallizations for Cu(In1-xGax)Se2 Photovoltaic Cells

    SciTech Connect

    Hersh, P. A.; Curtis, C. J.; van Hest, M. F. A. M.; Kreuder, J. J.; Pasquarelli, R.; Miednaer, A.; Ginley, D. S.

    2011-12-01

    This study reports the inkjet printing of Ag front contacts on Aluminum doped Zinc Oxide (AZO)/intrinsic Zinc Oxide (i-ZnO)/CdS/Cu(In{sub 1-x}Ga{sub x})Se{sub 2} (CIGS)/Mo thin film photovoltaic cells. The printed Ag contacts are being developed to replace the currently employed evaporated Ni/Al bi-layer contacts. Inkjet deposition conditions were optimized to reduce line resistivity and reduce contact resistance to the Al:ZnO layer. Ag lines printed at a substrate temperature of 200 C showed a line resistivity of 2.06 {mu}{Omega} {center_dot} cm and a contact resistance to Al:ZnO of 8.2 {+-} 0.2 m{Omega} {center_dot} cm{sup 2} compared to 6.93 {+-} 0.3 m{Omega} {center_dot} cm{sup 2} for thermally evaporated contacts. These deposition conditions were used to deposit front contacts onto high quality CIGS thin film photovoltaic cells. The heating required to print the Ag contacts caused the performance to degrade compared to similar devices with evaporated Ni/Al contacts that were not heated. Devices with inkjet printed contacts showed 11.4% conversion efficiency compared to 14.8% with evaporated contacts. Strategies to minimize heating, which is detrimental for efficiency, during inkjet printing are proposed.

  6. Optical constants of Cu(In, Ga)Se{sub 2} for arbitrary Cu and Ga compositions

    SciTech Connect

    Minoura, Shota; Kodera, Keita; Nakane, Akihiro; Fujiwara, Hiroyuki; Maekawa, Takuji; Niki, Shigeru

    2015-05-21

    The optical constants of Cu(In, Ga)Se{sub 2} (CIGS)-based polycrystalline layers with different Cu and Ga compositions are parameterized completely up to a photon energy of 6.5 eV assuming several Tauc-Lorentz transition peaks. Based on the modeled optical constants, we establish the calculation procedure for the CIGS optical constants in a two-dimensional compositional space of (Cu, Ga) by taking the composition-induced shift of the critical point energies into account. In particular, we find that the variation of the CIGS optical constants with the Cu composition can be modeled quite simply by a spectral-averaging method in which the dielectric function of the target Cu composition is estimated as a weighted average of the dielectric functions with higher and lower Cu compositions. To express the effect of the Ga composition, on the other hand, an energy shift model reported earlier is adopted. Our model is appropriate for a wide variety of CIGS-based materials having different Cu and Ga compositions, although the modeling error increases slightly at lower Cu compositions [Cu/(In + Ga) < 0.69]. From our model, the dielectric function, refractive index, extinction coefficient, and absorption coefficient for the arbitrary CIGS composition can readily be obtained. The optical database developed in this study is applied further for spectroscopic ellipsometry analyses of CIGS layers fabricated by single and multi-stage coevaporation processes. We demonstrate that the compositional and structural characterizations of the CIGS-based layers can be performed from established analysis methods.

  7. One-pot electrodeposition, characterization and photoactivity of stoichiometric copper indium gallium diselenide (CIGS) thin films for solar cells.

    PubMed

    Harati, Mohammad; Jia, Jia; Giffard, Kévin; Pellarin, Kyle; Hewson, Carly; Love, David A; Lau, Woon Ming; Ding, Zhifeng

    2010-12-14

    Herein we report the one-pot electrodeposition of copper indium gallium diselenide, CuIn(1-x)Ga(x)Se(2) (CIGS), thin films as the p-type semiconductor in an ionic liquid medium consisting of choline chloride/urea eutectic mixture known as Reline. The thin films were characterized by scanning electron microscopy with energy dispersive X-ray analysis, transmission electron microscopy, X-ray photoelectron spectroscopy, Raman microspectroscopy, and UV-visible spectroscopy. Based on the results of the characterizations, the electrochemical bath recipe was optimized to obtain stoichiometric CIGS films with x between 0.2 and 0.4. The chemical activity and photoreactivity of the optimized CIGS films were found to be uniform using scanning electrochemical microscopy and scanning photoelectrochemical microscopy. Low-cost stoichiometric CIGS thin films in one-pot were successfully fabricated. PMID:20835485

  8. Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

    NASA Technical Reports Server (NTRS)

    Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  9. Electronic transitions in the bandgap of copper indium gallium diselenide polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Heath, Jennifer Theresa

    The electronic properties of polycrystalline copper indium gallium diselenide thin films have been investigated, with emphasis on understanding the distribution and origin of electronic states in the bandgap. The samples studied were working photovoltaic devices with the structure ZnO/CdS/CuIn1-xGa xSe2/Mo, and photovoltaic efficiencies ranging from 8 to 16%. The CdS layer and the p-type CuIn1-xGa xSe2 film create the n+- p junction at the heart of these devices. The samples were investigated using four techniques based on the electrical response of the junction: admittance spectroscopy, drive level capacitance profiling, transient photocapacitance spectroscopy, and transient photocurrent spectroscopy. From these measurements the free carrier densities, defect densities within the bandgap, spatial uniformity, and minority carrier mobilities have been deduced. The sub-bandgap response from the CuIn1-xGaxSe2 film was dominated by two defects. One exhibited a thermal transition to the valence band with an activation energy ranging between 0.1 and 0.3 eV and thermal emission prefactors obeying the Meyer-Neldel rule. The second was detected as an optical transition 0.8 eV from the valence band edge. Neither of these defects exhibited densities that varied systematically with gallium content, implying that they are not directly connected with the group III elements in these alloys. The defect densities also do not clearly correlate with the photovoltaic device performance; however, the position of the 0.8 eV defect lies nearer to mid-gap in the higher gallium, and hence higher band gap, material. This implies that it may be a more important recombination center in these devices and may be partially responsible for the reduced photovoltaic efficiencies observed when Ga/(In + Ga) > 0.4. An additional defect response was observed near mid-gap in films grown by processes known to produce lower quality devices. The influence of defects located at grain boundaries was also

  10. Nanocrystalline CuInSSe thin films by chemical bath deposition technique

    NASA Astrophysics Data System (ADS)

    Shrotriya, Vipin; Rajaram, P.

    2016-05-01

    Crystalline CuInSSe thin films have been deposited on glass substrate by chemical bath deposition technique. The CuCl2, InCl3, thiourea and SeO2 were used as source materials for the Cu2+, In3+, S2- and Se2- ions and the Cu/In ratio was kept at 1.0. EDC was used as a complexing agent. The XRD, Scanning Electron Microscope (SEM), Energy Dispersive Analysis of X-Ray (EDAX) and Optical transmission studies were used for structural analysis, surface morphology, elemental analysis and optical band gap, of the grown thin films respectively. The deposition parameters such as pH, deposition temperature and deposition time were optimized.

  11. Solar-driven hydrogen evolution using a CuInS2/CdS/ZnO heterostructure nanowire array as an efficient photoanode.

    PubMed

    Choi, Youngwoo; Beak, Minki; Yong, Kijung

    2014-08-01

    Photoanodes prepared using CuInS2/CdS/ZnO nanowires were fabricated by a solution-based process for constructing a photo-driven hydrogen generation system. For efficient light harvesting and photoexcited charge collection, ZnO nanowire (NW) photoanode arrays were co-sensitized with CdS and CuInS2 (CIS). A CdS layer was deposited on the ZnO NW via successive ion layer adsorption and reaction (SILAR), and the CIS layer was prepared by depositing a molecular precursor solution onto the CdS/ZnO NW. The generated anodic photocurrent was increased with the subsequent deposition of the CIS and CdS layers. Ultraviolet photoelectron spectroscopy analysis revealed cascade type-II band alignments for the CIS/CdS/ZnO NW photoanodes, which enabled efficient electron collection. Our heterostructure photoelectrode has generated a greatly improved photocurrent density of 13.8 mA cm(-2) at 0.3 V vs. SCE under 1 sun illumination. PMID:24965525

  12. Thin Film Solar Cells: Organic, Inorganic and Hybrid

    NASA Technical Reports Server (NTRS)

    Dankovich, John

    2004-01-01

    Thin film solar cells are an important developing resource for hundreds of applications including space travel. In addition to being more cost effective than traditional single crystal silicon cells, thin film multi-crystaline cells are plastic and light weight. The plasticity of the cells allows for whole solar panels to be rolled out from reams. Organic layers are being investigated in order to increase the efficiency of the cells to create an organic / inorganic hybrid cell. The main focus of the group is a thin film inorganic cell made with the absorber CuInS2. So far the group has been successful in creating the layer from a single-source precursor. They also use a unique method of film deposition called chemical vapor deposition for this. The general makeup of the cell is a molybdenum back contact with the CuInS2 layer, then CdS, ZnO and aluminum top contacts. While working cells have been produced, the efficiency so far has been low. Along with quantum dot fabrication the side project of this that is currently being studied is adding a polymer layer to increase efficiency. The polymer that we are using is P3OT (Poly(3-octylthiopene-2,5-diyll), retroregular). Before (and if) it is added to the cell, it must be understood in itself. To do this simple diodes are being constructed to begin to look at its behavior. The P3OT is spin coated onto indium tin oxide and silver or aluminum contacts are added. This method is being studied in order to find the optimal thickness of the layer as well as other important considerations that may later affect the composition of the finished solar cell. Because the sun is the most abundant renewable, energy source that we have, it is important to learn how to harness that energy and begin to move away from our other depleted non-renewable energy sources. While traditional silicon cells currently create electricity at relatively high efficiencies, they have drawbacks such as weight and rigidness that make them unattractive

  13. XPS Investigation of Surface Secondary Phase Segregation in CIGS Thin Film

    SciTech Connect

    Al-Thani, H. A.; Abdullah, M. M.; Hasoon, F. S.

    2011-01-01

    Cu(In, Ga)Se{sub 2} (CIGS) thin films were deposited on Molybdenum (Mo) coated soda lime glass (SLG/Mo) substrates, using physical vapor deposition (PVD) 3-stage process. The Mo thin films were sputtered on SLG substrates using DC planar magnetron sputtering at a working gas (Ar) pressure that varies from 0.8 mT to 12 mT with a sputtering power density of 1.2 W/cm{sub 2}. The sputtering pressure of Mo thin films was varied in order to induce variations in the sputtered films morphology and porosity; as well as to subsequently induce variations in the Na out-diffusion from SLG substrate. The surface chemistry of CIGS thin films was investigated by X-Ray Photoelectron Spectroscopy (XPS). The XPS surface surveys (top 30A) and depth profiling survey (top 100A) for the elements, their chemical states, and their relative concentration were analyzed for CIGS thin films. The XPS surface analysis and composition of CIGS thin films were correlated to the bulk composition and Na out-diffusion in the CIGS films from SLG substrates.

  14. The Effect of Film Composition on the Texture and Grain Size of CuInS2 Prepared by Spray Pyrolysis

    NASA Technical Reports Server (NTRS)

    Jin, Michael H.-C.; Banger, Kulbinder K.; Harris, Jerry D.; Hepp, Aloysius F.

    2003-01-01

    CuInS2 was deposited by spray pyrolysis using single-source precursors synthesized in-house. Films with either (112) or (204/220) preferred orientation always showed Cu-rich and In-rich composition respectively. The In-rich (204/220)-oriented films always contained a secondary phase evaluated as an In-rich compound, and the hindrance of (112)-oriented grain growth was confirmed by glancing angle X-ray diffraction. In conclusion, only the Cu-rich (112)-oriented films with dense columnar grains can be prepared without the secondary In-rich compound. The effect of extra Cu on the grain size and the solar cell results will be also presented.

  15. Large magnetoresistance in Heusler-alloy-based epitaxial magnetic junctions with semiconducting Cu(In0.8Ga0.2)Se2 spacer

    NASA Astrophysics Data System (ADS)

    Kasai, S.; Takahashi, Y. K.; Cheng, P.-H.; Ikhtiar, Ohkubo, T.; Kondou, K.; Otani, Y.; Mitani, S.; Hono, K.

    2016-07-01

    We investigated the structure and magneto-transport properties of magnetic junctions using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Cu(In0.8Ga0.2)Se2 (CIGS) semiconductor as spacers. Owing to the semiconducting nature of the CIGS spacer, large magnetoresistance (MR) ratios of 40% at room temperature and 100% at 8 K were obtained for low resistance-area product (RA) values between 0.3 and 3 Ω μm2. Transmission electron microscopy observations confirmed the fully epitaxial growth of the chalcopyrite CIGS layer, and the temperature dependence of RA indicated that the large MR was due to spin dependent tunneling.

  16. Fabrication and centeracterization of ordered CuIn(1−x)GaxSe2 nanopore films via template-based electrodeposition

    PubMed Central

    2012-01-01

    Ordered CuIn(1−x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photoelectrochemical water splitting. PMID:23245846

  17. An energy-harvesting scheme utilizing Ga-rich CuIn(1-x)GaxSe2 quantum dots for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Lin, Chin-An; Huang, K. P.; Ho, S. T.; Huang, Mei-Wen; He-Hau, Jr.

    2012-09-01

    Ga-rich CuIn(1-x)GaxSe2 (CIGS) quantum dots (QDs) with a wide bandgap of 1.58 eV were utilized in dye-sensitized solar cells for energy harvesting. Ga-rich CIGS QDs at TiO2 photoanodes afford the recombination reduction and thus suppress the dark current, leading to the increase of short-circuit current from 14.47 to 15.27 mA.cm-2 and open-circuit voltage from 751 to 762 mV. This is due to well-adjusted conduction band minimum of Ga-rich CIGS QDs between that of TiO2 and excited state oxidation potential of N719, enhancing the photoelectron collection and suppressing electron back-transfer from TiO2 to oxidized redox species in the electrolyte.

  18. Nanocrystalline Chalcopyrite Materials (CuInS2 and CuInSe2) via Low-Temperature Pyrolysis of Molecular Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Castro, Stephanie L.; Bailey, Sheila G.; Raffaelle, Ryne P.; Banger, Kulbinder K.; Hepp, Aloysius F.

    2003-01-01

    Nanometer sized particles of the chalcopyrite compounds CuInS2 and CuInSe2 were synthesized by thermal decomposition of molecular single-source precursors (PPh3)2CuIn(SEt)4 and (PPh3)2CuIn(SePh)4, respectively, in the non-coordinating solvent dioctyl phthalate at temperatures between 200 and 300 C. The nanoparticles range in size from 3 - 30 nm and are aggregated to form roughly spherical clusters of about 500 nm in diameter. X-ray diffraction of the nanoparticle powders shows greatly broadened lines indicative of very small particle sizes, which is confirmed by TEM. Peaks present in the XRD can be indexed to reference patterns for the respective chalcopyrite compounds. Optical spectroscopy and elemental analysis by energy dispersive spectroscopy support the identification of the nanoparticles as chalcopyrites.

  19. Native point defects in CuIn(1-x)Ga(x)Se2: hybrid density functional calculations predict the origin of p- and n-type conductivity.

    PubMed

    Bekaert, J; Saniz, R; Partoens, B; Lamoen, D

    2014-10-28

    We have performed a first-principles study of the p- and n-type conductivity in CuIn(1-x)Ga(x)Se2 due to native point defects, based on the HSE06 hybrid functional. Band alignment shows that the band gap becomes larger with x due to the increasing conduction band minimum, rendering it hard to establish n-type conductivity in CuGaSe2. From the defect formation energies, we find that In/GaCu is a shallow donor, while V(Cu), V(In/Ga) and Cu(In/Ga) act as shallow acceptors. Using the total charge neutrality of ionized defects and intrinsic charge carriers to determine the Fermi level, we show that under In-rich growth conditions InCu causes strongly n-type conductivity in CuInSe2. Under increasingly In-poor growth conditions, the conductivity type in CuInSe2 alters to p-type and compensation of the acceptors by In(Cu) reduces, as also observed in photoluminescence experiments. In CuGaSe2, the native acceptors pin the Fermi level far away from the conduction band minimum, thus inhibiting n-type conductivity. On the other hand, CuGaSe2 shows strong p-type conductivity under a wide range of Ga-poor growth conditions. Maximal p-type conductivity in CuIn(1-x)Ga(x)Se2 is reached under In/Ga-poor growth conditions, in agreement with charge concentration measurements on samples with In/Ga-poor stoichiometry, and is primarily due to the dominant acceptor Cu(In/Ga).

  20. Near-Infrared Emitting CuInSe2/CuInS2 Dot Core/Rod Shell Heteronanorods by Sequential Cation Exchange

    PubMed Central

    2015-01-01

    The direct synthesis of heteronanocrystals (HNCs) combining different ternary semiconductors is challenging and has not yet been successful. Here, we report a sequential topotactic cation exchange (CE) pathway that yields CuInSe2/CuInS2 dot core/rod shell nanorods with near-infrared luminescence. In our approach, the Cu+ extraction rate is coupled to the In3+ incorporation rate by the use of a stoichiometric trioctylphosphine-InCl3 complex, which fulfills the roles of both In-source and Cu-extracting agent. In this way, Cu+ ions can be extracted by trioctylphosphine ligands only when the In–P bond is broken. This results in readily available In3+ ions at the same surface site from which the Cu+ is extracted, making the process a direct place exchange reaction and shifting the overall energy balance in favor of the CE. Consequently, controlled cation exchange can occur even in large and anisotropic heterostructured nanocrystals with preservation of the size, shape, and heterostructuring of the template NCs into the product NCs. The cation exchange is self-limited, stopping when the ternary core/shell CuInSe2/CuInS2 composition is reached. The method is very versatile, successfully yielding a variety of luminescent CuInX2 (X = S, Se, and Te) quantum dots, nanorods, and HNCs, by using Cd-chalcogenide NCs and HNCs as templates. The approach reported here thus opens up routes toward materials with unprecedented properties, which would otherwise remain inaccessible. PMID:26449673

  1. Thin Clouds

    Atmospheric Science Data Center

    2013-04-18

    ... their delicate appearance, thin, feathery clouds of ice crystals called cirrus may contribute to global warming. Some scientists ... July 9, 2002 - Thin, feathery clouds of ice crystals over the Caribbean Sea. project:  MISR ...

  2. A study on the optical and microstructural characteristics of quaternary Cu(In,Ga)Se2 polycrystalline thin films

    NASA Astrophysics Data System (ADS)

    Albin, D. S.; Tuttle, J. R.; Mooney, G. D.; Carapella, J. J.; Duda, A.

    The optical and microstructural properties of polycrystalline CuIn(1-y)Ga(y)Se2 (CIGS) thin films deposited by coevaporation are reported within the boundaries of an orthogonal experimental design investigating the effects of Cu flux, Ga/(Ga+In) composition, Se rate, substrate temperature, Ts, and substrate type. The optical bandgaps for near-stoichiometric CuIn(1-y)Ga(y)Se2 are smaller and exhibit bowing behavior which follows the relationship Eg = 1.011 + 0.664y + 0.249y(y-1). In comparison, Cu-poor films exhibit a linear variation with zero bowing given by Eg = 1.0032 + 0.71369y. The increase in Eg with decreasing Cu may result in part from lattice shrinkage as measured by X-ray diffraction (XRD). Optical absorption below the band edge appears to be dependent upon both Cu and Ga content. Absorption coefficients of alpha = 1000/cm or greater within this region are indicative of Cu-rich films. Absorption of 1000/cm or less may be dictated more by surface morphology and possible phase separation in films containing = 50 percent or more Ga. The magnitude of alpha varies from 20,000 near the band edge up to 100,000/cm at 1 eV above the edge for near-stoichiometric films, with the absorption in Cu-poor films being slightly less.

  3. Nd:YAG laser ablation characteristics of thin CIGS solar cell films

    NASA Astrophysics Data System (ADS)

    Lee, S. H.; Kim, C. K.; In, J. H.; Kim, D. S.; Ham, H. J.; Jeong, S. H.

    2013-12-01

    This work reports that the ablation characteristics of thin CuIn1- x Ga x Se2 (CIGS) solar cell film differ significantly with elemental composition and laser pulse energy. From in situ shadowgraphs measured during Nd:YAG laser (1,064 nm) irradiation of CIGS films and crater morphologies, it was found that strong surface evaporation is dominant for low Ga concentration films of which band gap is well below the photon energy. As the band gap of CIGS film becomes close to or over the laser photon energy due to increased Ga content, surface absorption diminishes and at low laser energy, laser heating of the film plays an important role. It is demonstrated that for the CIGS films with Ga/(Ga + In) ratio being approximately over 0.2, the laser irradiation leads to solid phase removal of the film due to thermomechanical fracture at low laser energy but to ablative evaporation at elevated energy.

  4. Deposition of binary, ternary and quaternary metal selenide thin films from diisopropyldiselenophosphinato-metal precursors

    NASA Astrophysics Data System (ADS)

    Mahboob, Sumera; Malik, Sajid N.; Haider, Nazre; Nguyen, C. Q.; Malik, Mohammad A.; O'Brien, Paul

    2014-05-01

    The tetragonal chalcopyrite phases CuInSe2, CuGaSe2 and CuIn0.7Ga0.3Se2 have been deposited onto the glass substates by Aerosol Assisted Chemical Vapour Deposition (AACVD) from a mixture of [Mx(iPr2PSe2)y] complexes (M=In, Ga, Cu) at temperatures between 300 °C and 500 °C. The thin films were characterized by powder X-ray diffraction (p-XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The bulk compositional properties have been studied by energy dispersive X-ray (EDX) analysis. SEM and AFM studies demonstrate a significant variation in morphology of the deposited materials at different deposition temperatures.

  5. Rapid composition analysis of compound semiconductor thin film solar cell by laser induced breakdown spectroscopy

    NASA Astrophysics Data System (ADS)

    Lee, S. H.; Kim, C. K.; In, J. H.; Jeong, S. H.

    2014-03-01

    The characteristics of laser-induced breakdown spectroscopy (LIBS) such as short measurement time and no sample preparation provide clear advantages over other analytical techniques for rapid elemental analysis at manufacturing sites where the composition of products need to be determined in real-time for process monitoring or quality control. Thin film solar cells based on CuIn1-xGaxSe2 (CIGS), polycrystalline compound semiconductor material, have unique advantages of high efficiency (>20%), long-term stability, and low manufacturing cost over other types of solar cell. The electrical and optical properties of the thin CIGS films are closely related to the concentration ratios among its major constituent elements Cu, In, Ga and Se such as Ga/(Ga + In) and Cu/(Ga + In), and thus an accurate measurement of the composition of CIGS thin films has been an issue among CIGS solar cell researchers, requiring a fast and reliable technique for composition analysis. This paper presents the results of nanosecond (ns) and femtosecond (fs) laser based LIBS analysis of thin CIGS films. The critical issues for LIBS analysis of CIGS thin films such are discussed in comparison with ns- and fs-LIBS measurement results. The calibration of LIBS signal intensity ratios with respect to reference concentration data is carried out and the results of optimal line selection for LIBS analysis, depth profiling capability, and reproducibility are discussed.

  6. Thin-Film Solar Cells on Metal Foil Substrates for Space Power

    NASA Technical Reports Server (NTRS)

    Raffaelle, Ryne P.; Hepp, Aloysius F.; Hoffman, David J.; Dhere, N.; Tuttle, J. R.; Jin, Michael H.

    2004-01-01

    Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved

  7. Growth and characterization of copper indium diselenide polycrystalline thin films for photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Engelmann, Michael G.

    The incorporation of sulfur into CuInSe2 thin films was quantitatively investigated to establish a scientific and engineering basis for the fabrication of homogeneous and compositionally graded CuIn(Se,S)2 thin films. The motivation for this work was to develop a means of controlling the band gap for this class of materials to achieve improved performance in photovoltaic devices. The approach taken was the reaction of thin film Cu/In layers and CuInSe2 thin films in H2S and/or H2Se gasses at atmospheric pressure. The reaction of Cu/In layers in a mixture of H2S and H 2Se as a function of gas phase composition was investigated to quantify the relationship between the gas and solid phase compositions in the formation of homogeneous CuIn(Se,S)2 thin films. A reaction model, accounting for mixing and the presence of oxygen, was developed and regressed to the experimental data. This work then led to the development of a phenomenological model for the inhomogeneous incorporation of sulfur into CuInSe2 thin films by a surface reaction followed by diffusion. X-ray diffraction line profiles, grain size distribution, and grain boundary width were used in conjunction with a quantitative diffusion model to estimate the bulk and grain boundary diffusion of sulfur into CuInSe2. Diffusion coefficients were determined at multiple temperatures and activation energies were estimated. The analysis was also applied to the diffusion of CdS into CdTe that occurs during the post deposition thermochemical treatments that are necessary to achieve high performance CdTe solar cells. Bulk and grain boundary diffusion coefficients and activation energies for CdS-CdTe were estimated. Based on the analysis of both equilibrium chemistry and diffusion, a well defined process for the fabrication of homogeneous and graded CuIn(Se,S) 2 thin films was developed. This process provides a method of band gap engineering that has application in both the fabrication of wide band gap devices for use in

  8. CONTROLLING THE CHARACTERISTICS OF LASER LIGHT: Kinetics of bleaching and induced absorption in glasses with CuInS2xSe2(1-x) microcrystallites under picosecond excitation

    NASA Astrophysics Data System (ADS)

    Yumashev, K. V.; Mikhaĭlov, V. P.; Bondar', I. V.; Demchuk, M. I.; Prokoshin, P. V.; Gurin, V. S.; Zhmako, S. P.

    1993-09-01

    We investigate the intensity dependence of the transmission and kinetics of the change in absorption of glasses with CuInS2xSe2(1-x) microcrystallites excited by 15 ps pulses at wavelengths of 1.08 and 0.54 μm. For photon energies slightly larger than the band gap, low excitation intensities (50 MW/cm2) lead to a bleached state with a relaxation time of ~ 11 ps. This effect is caused by a filling of quantum-well levels in the CuInS2xSe2(1-x) microcrystallites. As the pumping level increases, a fast (~40 ps) transition is observed from bleaching to strong induced absorption. The latter has a relaxation time of ~4 ns and is associated with two-photon interband transitions. At high pump intensities (~ 10 GW/cm2), only induced absorption is observed. For photon excitation energies that considerably exceed the band gap, bleaching is not observed, and increasing the pump level leads to only an induced absorption. We have estimated the two-photon absorption parameter of glasses with CuInS2xSe2(1-x) microcrystallites at a wavelength of 1.08 μm. By using these glasses for mode locking of pulsed Nd:YAG and Nd:YAlO3 lasers we have obtained ultrashort pulses with durations of 36 and 16 ps, respectively.

  9. Device Physics of Thin-Film Polycrystalline Cells and Modules; Final Subcontract Report; 6 December 1993-15 March 1998

    SciTech Connect

    Sites, J. R.

    1999-05-03

    This report describes work performed under this subcontract by Colorado State University (CSU). The results of the subcontract effort included progress in understanding CdTe and Cu(In1-xGax)Se2-based solar cells, in developing additional measurement and analysis techniques at the module level, and in strengthening collaboration within the thin-film polycrystalline solar-cell community. A major part of the CdTe work consisted of elevated-temperature stress tests to determine fabrication and operation conditions that minimize the possibility of long-term performance changes. Other CdTe studies included analysis of the back-contact junction, complete photon accounting, and the tradeoff with thin CdS between photocurrent gain and voltage loss. The Cu(In1-xGax)Se2 studies included work on the role of sodium in enhancing performance, the conditions under which conduction-band offsets affect cell performance, the transient effects of cycling between light and dark conditions, and detailed analysis of several individual series of cells. One aspect of thin-film module analysis has been addressing the differences in approach needed for relatively large individual cells made without grids. Most work, however, focused on analysis of laser-scanning data, including defect signatures, photocurrent/shunting separation, and the effects of forward bias or high-intensity light. Collaborations with other laboratories continued on an individual basis, and starting in 1994, collaboration was through the national R&D photovoltaic teams. CSU has been heavily involved in the structure and logistics of both the CdTe and CIS teams, as well as making frequent technical contributions in both areas.

  10. A facile in situ synthesis route for CuInS(2) quantum-dots/In(2)S(3) co-sensitized photoanodes with high photoelectric performance.

    PubMed

    Wang, Yuan-Qiang; Rui, Yi-Chuan; Zhang, Qing-Hong; Li, Yao-Gang; Wang, Hong-Zhi

    2013-11-27

    CuInS2 quantum-dot sensitized TiO2 photoanodes with In2S3 buffer layer were in situ prepared via chemical bath deposition of In2S3, where the Cd-free In2S3 layer then reacted with TiO2/CuxS which employed a facile SILAR process to deposit CuxS quantum dots on TiO2 film, followed by a covering process with ZnS layer. Polysulfide electrolyte and Cu2S on FTO glass counter electrode were used to provide higher photovoltaic performance of the constructed devices. The characteristics of the quantum dots sensitized solar cells were studied in more detail by optical measurements, photocurrent-voltage performance measurements, and impedance spectroscopy. On the basis of optimal CuxS SILAR cycles, the best photovoltaic performance with power conversion efficiency (η) of 1.62% (Jsc = 6.49 mA cm(-2), Voc = 0.50 V, FF = 0.50) under full one-sun illumination was achieved by using Cu2S counter electrode. Cu2S-FTO electrode exhibits superior electrocatalytic ability for the polysulfide redox reactions relative to that of Pt-FTO electrode.

  11. Enhancing the light absorbance of polymer solar cells by introducing pulsed laser-deposited CuIn0.8Ga0.2Se2 nanoparticles

    PubMed Central

    2014-01-01

    Evenly separated crystalline CuIn0.8Ga0.2Se2 (CIGS) nanoparticles are deposited on ITO-glass substrate by pulsed laser deposition. Such CIGS layers are introduced between conjugated polymer layers and ITO-glass substrates for enhancing light absorbance of polymer solar cells. The P3HT:PCBM absorbance between 300 and 650 nm is enhanced obviously due to the introduction of CIGS nanoparticles. The current density-voltage curves of a P3HT:PCBM/CIGS solar cell demonstrate that the short-circuit current density is improved from 0.77 to 1.20 mA/cm2. The photoluminescence spectra show that the excitons in the polymer are obviously quenched, suggesting that the charge transfer between the P3HT:PCBM and CIGS occurred. The results reveal that the CIGS nanoparticles may exhibit the localized surface plasmon resonance effect just as metallic nanostructures. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:24994961

  12. Effect of ph on the Electrodeposition of Cu(In, Al)Se2 from Aqueous Solution in Presence of Citric Acid as Complexing Agent

    NASA Astrophysics Data System (ADS)

    Ganjkhanlou, Yadolah; Ebadzadeh, Touradj; Kazemzad, Mahmood; Maghsoudipour, Amir; Kianpour-Rad, Mansoor

    2015-05-01

    Effect of pH on the one-step electrodeposition of Cu(In, Al)Se2 chalcopyrite layer in the presence of citric acid has been investigated by applying different electrochemical and characterization techniques. It has been observed that at pH of 1.5, nanocrystalline phase of chalcopyrite and small amount of binary phase of Cu2Se with overall composition of Cu0.91In0.32Al0.39Se2 have been deposited. On the other hand, at pH of 4, the film composition changed to Cu1.9In0.05Al0.21Se2 and an additional binary phase of copper selenide (CuSe) has also been formed. Morphological investigation illustrated that smooth and compact layer with fine spherical particles having the size of 20 nm has been obtained at pH of 1.5 whereas mixture of planar and spherical particles with size of 450-550 nm have been formed at pH of 4. In alkaline environment (pH 9), the deposition current has been noticeably decreased and no deposition occurred due to the formation of a stable complex of citric acid with metal ions. The mechanism of citric acid interaction with metal ions at different pH has also been studied by cyclic voltammetry measurement.

  13. Self-assembled synthesis of 3D Cu(In1 - xGax)Se2 nanoarrays by one-step electroless deposition into ordered AAO template

    NASA Astrophysics Data System (ADS)

    Zhang, Bin; Zhou, Tao; Zheng, Maojun; Xiong, Zuzhou; Zhu, Changqing; Li, Hong; Wang, Faze; Ma, Li; Shen, Wenzhong

    2014-07-01

    Quaternary nanostructured Cu(In1 - xGax)Se2 (CIGS) arrays were successfully fabricated via a novel and simple solution-based protocol on the electroless deposition method, using a flexible, highly ordered anodic aluminium oxide (AAO) substrate. This method does not require electric power, complicated sensitization processes, or complexing agents, but provides nearly 100% pore fill factor to AAO templates. The field emission scanning electron microscopy (FE-SEM) images show that we obtained uniformly three-dimensional nanostructured CIGS arrays, and we can tailor the diameter and wall thicknesses of the nanostructure by adjusting the pore diameter of the AAO and metal Mo layer. Their chemical composition was determined by energy-dispersive spectroscopy analysis, which is very close to the stoichiometric value. The Raman spectroscopy, x-ray diffraction (XRD) pattern, and transmission electron microscopy (TEM) further confirm the formation of nanostructured CIGS with prominent chalcopyrite structure. The nanostructured CIGS arrays can support the design of low-cost, highlight-trapping, and enhanced carrier collection nanostructured solar cells.

  14. Surface Modification of Polycrystalline Cu(In,Ga)Se2 Thin-Film Solar Cell Absorber Surfaces for PEEM Measurements

    SciTech Connect

    Wilks, R. G.; Contreras, M. A.; Lehmann, S.; Herrero-Albillos, J.; Bismaths, L. T.; Kronast, F.; Noufi, R.; Bar, M.

    2011-01-01

    We present a thorough examination of the {micro}m-scale topography of Cu(In, Ga)Se{sub 2} ('CIGSe') thin-film solar cell absorbers using different microscopy techniques. We specifically focus on the efficacy of preparing smooth sample surfaces - by etching in aqueous bromine solution - for a spatially resolved study of their chemical and electronic structures using photoelectron emission microscopy (PEEM). The etching procedure is shown to reduce the CIGSe surface roughness from ca. 40 to 25 nm after 40s etching, resulting in an increase in the quality of the obtained PEEM images. Furthermore we find that the average observed grain size at the etched surfaces appears larger than at the unetched surfaces. Using a liftoff procedure, it is additionally shown that the backside of the absorber is flat but finely patterned, likely due to being grown on the finely-structured Mo back contact.

  15. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement. PMID:26736028

  16. Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells.

    PubMed

    Zhang, Ming-Jian; Lin, Qinxian; Yang, Xiaoyang; Mei, Zongwei; Liang, Jun; Lin, Yuan; Pan, Feng

    2016-02-10

    Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

  17. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1991--15 January 1992

    SciTech Connect

    Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E.

    1992-10-01

    Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

  18. Electron Drift-Mobility Measurements in Polycrystalline CuIn 1-xGaxSe2 Solar Cells

    SciTech Connect

    Dinca, S. A.; Schiff, E. A.; Shafarman, W. N.; Egaas, B.; Noufi, R.; Young, D. L.

    2012-03-05

    We report photocarrier time-of-flight measurements of electron drift mobilities for the p-type CuIn{sub 1-x}Ga{sub x}Se{sub 2} films incorporated in solar cells. The electron mobilities range from 0.02 to 0.05 cm{sup 2}/Vs and are weakly temperature-dependent from 100-300 K. These values are lower than the range of electron Hall mobilities (2-1100 cm{sup 2}/Vs) reported for n-type polycrystalline thin films and single crystals. We propose that the electron drift mobilities are properties of disorder-induced mobility edges and discuss how this disorder could increase cell efficiencies.

  19. Stable and Flexible CuInS2/ZnS:Al-TiO2 Film for Solar-Light-Driven Photodegradation of Soil Fumigant.

    PubMed

    Yan, Lili; Li, Zhichun; Sun, Mingxing; Shen, Guoqing; Li, Liang

    2016-08-10

    Semiconductor quantum dots (QDs) are suitable light absorbers for photocatalysis because of their unique properties. However, QDs generally suffer from poor photochemical stability against air, limiting their applications in photocatalysis. In this study, a stable solar-light-driven QDs-containing photocatalytic film was developed to facilitate photocatalytic degradation of the soil fumigant 1,3-dichloropropene (1,3-D). Highly stable CuInS2/ZnS:Al core/shell QDs (CIS/ZnS:Al QDs) were synthesized by doping Al into the ZnS shell and controlling ZnS:Al shell thickness; the CIS/ZnS:Al QDs were subsequently combined with TiO2 to form a CIS/ZnS:Al-TiO2 photocatalyst. The optimized ZnS:Al shell thickness for 1,3-D photodegradation was approximately 1.3 nm, which guaranteed and balanced the good photocatalytic activity and stability of the CIS/ZnS:Al-TiO2 photocatalyst. The photodegradation efficiency of 1,3-D can be maintained up to more than 80% after five cycles during recycling experiment. When CIS/ZnS:Al-TiO2 was deposited as photocatalytic film on a flexible polyethylene terephthalate substrate, over 99% of cis-1,3-D and 98% of trans-1,3-D were depleted as they passed through the film during 15 h of irradiation under natural solar light. This study demonstrated that the stable CIS/ZnS:Al-TiO2 photocatalyst both in powder and film form is a promising agent for photodegradation and emission reduction of soil fumigants.

  20. Large-scale synthesis of highly emissive and photostable CuInS2/ZnS nanocrystals through hybrid flow reactor

    NASA Astrophysics Data System (ADS)

    Lee, Jun; Han, Chang-Soo

    2014-02-01

    We report a high-yield, low-cost synthesis route to colloidal CuInS2/ZnS (CIS/ZnS) nanocrystals (NCs) with Cu vacancies in the crystal lattice. Yellow-emitting CIS/ZnS core/shell NCs of high luminescence were facilely synthesized via a stepwise, consecutive hybrid flow reactor approach. It is based on serial combination of a batch-type mixer and a flow-type furnace. In this reactor, the flow rate of the solutions was typically 1 mL/min, 100 times larger than that of conventional microfluidic reactors. This method can produce gram quantities of material with a chemical yield in excess of 90% with minimal solvent waste. This is a noninjection-based approach in 1-dodecanethiol (DDT) with excellent synthetic reproducibility and large-scale capability. The optical features and structure of the obtained CIS/ZnS NCs have been characterized by UV-vis and fluorescence spectroscopies, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX) and high-resolution transmission electron microscopy (HRTEM). The resulting CIS/ZnS NCs in chloroform exhibit quantum yield (QY) of 61.4% with photoemission peaking at 561 nm and full width at half maximum (FWHM) of 92 nm. The as-synthesized CIS/ZnS NCs were proven to have excellent photostability. The synthesized CIS/ZnS NCs can be a promising fluorescent probe for biological imaging and color converting material for light-emitting diode due to Cd-free constituents.

  1. The composition effect on the optical properties of aqueous synthesized Cu-In-S and Zn-Cu-In-S quantum dot nanocrystals.

    PubMed

    Zhang, Butian; Wang, Yucheng; Yang, Chengbin; Hu, Siyi; Gao, Yuan; Zhang, Yiping; Wang, Yue; Demir, Hilmi Volkan; Liu, Liwei; Yong, Ken-Tye

    2015-10-14

    Multiternary quantum dots (QDs), because of the large degree of freedom in their structure and composition, have a wide tunability in their bandgap but also exhibit an increased uncertainty and complexity in their optical properties. In this work, we synthesized the ternary Cu-In-S (CIS) and quaternary Zn-Cu-In-S (ZCIS) QDs with different composition ratios via a facile aqueous route. The CIS QDs show multi-peak photoluminescence with their peak intensity dependent on the Cu : In ratio, which was illustrated using a donor-acceptor pair recombination process. Upon incorporation of Zn into the CIS QDs under similar conditions, the acquired ZCIS QDs exhibit blue-shifted photoluminescence (PL) spectra with an enhanced emission intensity and a narrowed spectral width (∼100 nm). A comparative study reveals that, reducing the Cu : In ratio in the CIS QDs and increasing the Zn content in the alloyed ZCIS QDs are both feasible strategies for bandgap engineering, although the influences on optical properties of the QDs were different. The XRD and EDX spectra revealed that the widening of the bandgap of the ZCIS QDs was correlated with the alloyed nanostructures and the preferential substitution of Cu by Zn. Compared to the Cu : In ratio variation, incorporation of Zn into CIS QDs is an effective strategy to achieve a more homogeneous absorption band and a wide range of emission wavelength tunability. After ZnS shell coating, the ZCIS/ZnS QDs show a further enhanced PL intensity with a prolonged fluorescence lifetime. Unlike CIS QDs, the blue shift in PL upon the shell growth was not pronounced for ZCIS QDs, for which a surface reconstruction mechanism was proposed and discussed. Finally, the as-prepared ZCIS/ZnS QDs were employed for in vitro cell imaging and exhibited good biocompatibility to macrophage cells. PMID:26349413

  2. Large-scale synthesis of highly emissive and photostable CuInS2/ZnS nanocrystals through hybrid flow reactor

    PubMed Central

    2014-01-01

    We report a high-yield, low-cost synthesis route to colloidal CuInS2/ZnS (CIS/ZnS) nanocrystals (NCs) with Cu vacancies in the crystal lattice. Yellow-emitting CIS/ZnS core/shell NCs of high luminescence were facilely synthesized via a stepwise, consecutive hybrid flow reactor approach. It is based on serial combination of a batch-type mixer and a flow-type furnace. In this reactor, the flow rate of the solutions was typically 1 mL/min, 100 times larger than that of conventional microfluidic reactors. This method can produce gram quantities of material with a chemical yield in excess of 90% with minimal solvent waste. This is a noninjection-based approach in 1-dodecanethiol (DDT) with excellent synthetic reproducibility and large-scale capability. The optical features and structure of the obtained CIS/ZnS NCs have been characterized by UV–vis and fluorescence spectroscopies, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX) and high-resolution transmission electron microscopy (HRTEM). The resulting CIS/ZnS NCs in chloroform exhibit quantum yield (QY) of 61.4% with photoemission peaking at 561 nm and full width at half maximum (FWHM) of 92 nm. The as-synthesized CIS/ZnS NCs were proven to have excellent photostability. The synthesized CIS/ZnS NCs can be a promising fluorescent probe for biological imaging and color converting material for light-emitting diode due to Cd-free constituents. PMID:24533662

  3. In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells.

    PubMed

    Chen, Zhigang; Tang, Minghua; Song, Linlin; Tang, Guoqiang; Zhang, Bingjie; Zhang, Lisha; Yang, Jianmao; Hu, Junqing

    2013-01-01

    Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS2(CIS) layer as the photoabsorption material on nanoporous TiO2 film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO2 film in ethanol solution containing InCl3 · 4H2O, CuSO4 · 5H2O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl3 concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl3 concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO2 film, and CIS superstructures are in fact composed of ultrathin nanoplates as 'petals' with plenty of nanopores. In addition, the nanopores of TiO2 film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO2/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure.

  4. Stable and Flexible CuInS2/ZnS:Al-TiO2 Film for Solar-Light-Driven Photodegradation of Soil Fumigant.

    PubMed

    Yan, Lili; Li, Zhichun; Sun, Mingxing; Shen, Guoqing; Li, Liang

    2016-08-10

    Semiconductor quantum dots (QDs) are suitable light absorbers for photocatalysis because of their unique properties. However, QDs generally suffer from poor photochemical stability against air, limiting their applications in photocatalysis. In this study, a stable solar-light-driven QDs-containing photocatalytic film was developed to facilitate photocatalytic degradation of the soil fumigant 1,3-dichloropropene (1,3-D). Highly stable CuInS2/ZnS:Al core/shell QDs (CIS/ZnS:Al QDs) were synthesized by doping Al into the ZnS shell and controlling ZnS:Al shell thickness; the CIS/ZnS:Al QDs were subsequently combined with TiO2 to form a CIS/ZnS:Al-TiO2 photocatalyst. The optimized ZnS:Al shell thickness for 1,3-D photodegradation was approximately 1.3 nm, which guaranteed and balanced the good photocatalytic activity and stability of the CIS/ZnS:Al-TiO2 photocatalyst. The photodegradation efficiency of 1,3-D can be maintained up to more than 80% after five cycles during recycling experiment. When CIS/ZnS:Al-TiO2 was deposited as photocatalytic film on a flexible polyethylene terephthalate substrate, over 99% of cis-1,3-D and 98% of trans-1,3-D were depleted as they passed through the film during 15 h of irradiation under natural solar light. This study demonstrated that the stable CIS/ZnS:Al-TiO2 photocatalyst both in powder and film form is a promising agent for photodegradation and emission reduction of soil fumigants. PMID:27414776

  5. In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells

    PubMed Central

    2013-01-01

    Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS2(CIS) layer as the photoabsorption material on nanoporous TiO2 film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO2 film in ethanol solution containing InCl3 · 4H2O, CuSO4 · 5H2O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl3 concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl3 concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO2 film, and CIS superstructures are in fact composed of ultrathin nanoplates as ‘petals’ with plenty of nanopores. In addition, the nanopores of TiO2 film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO2/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure. PMID:23947562

  6. Interaction of ultra-short laser pulses with CIGS and CZTSe thin films

    NASA Astrophysics Data System (ADS)

    Gečys, P.; Markauskas, E.; Dudutis, J.; Račiukaitis, G.

    2014-01-01

    The thin-film solar cell technologies based on complex quaternary chalcopyrite and kesterite materials are becoming more attractive due to their potential for low production costs and optimal spectral performance. As in all thin-film technologies, high efficiency of small cells might be maintained with the transition to larger areas when small segments are interconnected in series to reduce photocurrent and related ohmic losses in thin films. Interconnect formation is based on the three scribing steps, and the use of a laser is here crucial for performance of the device. We present our simulation and experimental results on the ablation process investigations in complex CuIn1- x Ga x Se2 (CIGS) and Cu2ZnSn(S,Se)4 (CZTSe) cell's films using ultra-short pulsed infrared (~1 μm) lasers which can be applied to the damage-free front-side scribing processes. Two types of processes were investigated—direct laser ablation of ZnO:Al/CIGS films with a variable pulse duration of a femtosecond laser and the laser-induced material removal with a picosecond laser in the ZnO:Al/CZTSe structure. It has been found that the pulse energy and the number of laser pulses have a significantly stronger effect on the ablation quality in ZnO:Al/CIGS thin films rather than the laser pulse duration. For the thin-film scribing applications, it is very important to carefully select the processing parameters and use of ultra-short femtosecond pulses does not have a significant advantage compared to picosecond laser pulses. Investigations with the ZnO:Al/CZTSe thin films showed that process of the absorber layer removal was triggered by a micro-explosive effect induced by high pressure of sublimated material due to a rapid temperature increase at the molybdenum-CZTSe interface.

  7. Polycrystalline-thin-film thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Dhere, Neelkanth G.

    1996-02-01

    Thermophotovoltaic (TPV) cells convert thermal energy to electricity. Modularity, portability, silent operation, absence of moving parts, reduced air pollution, rapid start-up, high power densities, potentially high conversion efficiencies, choice of a wide range of heat sources employing fossil fuels, biomass, and even solar radiation are key advantages of TPV cells in comparison with fuel cells, thermionic and thermoelectric convertors, and heat engines. The potential applications of TPV systems include: remote electricity supplies, transportation, co-generation, electric-grid independent appliances, and space, aerospace, and military power applications. The range of bandgaps for achieving high conversion efficiencies using low temperature (1000-2000 K) black-body or selective radiators is in the 0.5-0.75 eV range. Present high efficiency convertors are based on single crystalline materials such as In1-xGaxAs, GaSb, and Ga1-xInxSb. Several polycrystalline thin films such as Hg1-xCdxTe, Sn1-xCd2xTe2, and Pb1-xCdxTe, etc., have great potential for economic large-scale applications. A small fraction of the high concentration of charge carriers generated at high fluences effectively saturates the large density of defects in polycrystalline thin films. Photovoltaic conversion efficiencies of polycrystalline thin films and PV solar cells are comparable to single crystalline Si solar cells, e.g., 17.1% for CuIn1-xGaxSe2 and 15.8% for CdTe. The best recombination-state density Nt is in the range of 10-15-10-16 cm-3 acceptable for TPV applications. Higher efficiencies may be achieved because of the higher fluences, possibility of bandgap tailoring, and use of selective emitters such as rare earth oxides (erbia, holmia, yttria) and rare earth-yttrium aluminium garnets. As compared to higher bandgap semiconductors such as CdTe, it is easier to dope the lower bandgap semiconductors. TPV cell development can benefit from the more mature PV solar cell and opto

  8. Performance and Loss Analyses of High-Efficiency Chemical Bath Deposition (CBD)-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells

    NASA Astrophysics Data System (ADS)

    Pudov, Alexei; Sites, James; Nakada, Tokio

    2002-06-01

    Chemically deposited ZnS has been investigated as a buffer layer alternative to cadmium sulfide (CdS) in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency of up to 18.1% based on chemical bath deposition (CBD)-ZnS{\\slash}CIGS heterostructures have been fabricated. This paper presents the performance and loss analyses of these cells based on the current-voltage (J-V) and spectral response curves, as well as comparisons with high efficiency CBD-CdS/CIGS and crystalline silicon counterparts. The CBD-ZnS/CIGS devices have effectively reached the efficiency of the current record CBD-CdS/CIGS cell. The effects of the superior current of the CBD-ZnS/CIGS cell and the superior junction quality of the CBD-CdS/CIGS cell on overall performance nearly cancel each other.

  9. Thin Film?

    NASA Astrophysics Data System (ADS)

    Kariper, İ. Afşin

    2014-09-01

    This study focuses on the critical surface tension of lead sulfite (PbSO3) crystalline thin film produced with chemical bath deposition on substrates (commercial glass).The PbSO3 thin films were deposited at room temperature at different deposition times. The structural properties of the films were defined and examined according to X-ray diffraction (XRD) and the XRD results such as dislocation density, average grain size, and no. of crystallites per unit area. Atomic force microscopy was used to measure the film thickness and the surface properties. The critical surface tension of the PbSO3 thin films was measured with an optical tensiometer instrument and calculated using the Zisman method. The results indicated that the critical surface tension of films changed in accordance with the average grain size and film thickness. The film thickness increased with deposition time and was inversely correlated with surface tension. The average grain size increased according to deposition time and was inversely correlated with surface tension.

  10. Optical, electrical and structural characterization of CuInSe2 thin films

    NASA Astrophysics Data System (ADS)

    Calderón, C.; Gordillo, G.; Romero, E.; Bolaños, W.; Bartolo-Pérez, P.

    2005-07-01

    The present issue of physica status solidi (b) comprises papers presented at the XVII Latin American Symposium on Solid State Physics (SLAFES 2004) in Havana, Cuba, 6-9 December 2004. Further papers from this conference are published in phys. stat. sol. (c) 2, No. 10 (2005).The cover picture refers to the article [1] on polycrystalline CuInSe2 films by Clara Calderón et al. and shows the crystal structure of CuInSe2 (right) and that of the In-rich phase CuIn3Se5 (left) which were used for the simulation and analysis of the X-ray diffraction spectra.Clara Lilia Calderón Triana is teacher at the Solar Cells Laboratory of Universidad Nacional de Colombia in Bogotá where she has been working on solar cells and semiconductor materials since 1995. In particular, she is fabricating thin film solar cells based on CuInSe2 and Cu(In,Ga)Se2. At SLAFES 2004, Clara Calderón received the physica status solidi Young Researcher Award for her second presentation entitled Study of electrical transport properties of ZnO thin films used as front contact of solar cells [2] which is published as Editor's Choice of this issue.

  11. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy.

    PubMed

    Klein, Andreas

    2015-04-10

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  12. Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Klein, Andreas

    2015-04-01

    Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new

  13. Reliable wet-chemical cleaning of natively oxidized high-efficiency Cu(In,Ga)Se2 thin-film solar cell absorbers

    NASA Astrophysics Data System (ADS)

    Lehmann, Jascha; Lehmann, Sebastian; Lauermann, Iver; Rissom, Thorsten; Kaufmann, Christian A.; Lux-Steiner, Martha Ch.; Bär, Marcus; Sadewasser, Sascha

    2014-12-01

    Currently, Cu-containing chalcopyrite-based solar cells provide the highest conversion efficiencies among all thin-film photovoltaic (PV) technologies. They have reached efficiency values above 20%, the same performance level as multi-crystalline silicon-wafer technology that dominates the commercial PV market. Chalcopyrite thin-film heterostructures consist of a layer stack with a variety of interfaces between different materials. It is the chalcopyrite/buffer region (forming the p-n junction), which is of crucial importance and therefore frequently investigated using surface and interface science tools, such as photoelectron spectroscopy and scanning probe microscopy. To ensure comparability and validity of the results, a general preparation guide for "realistic" surfaces of polycrystalline chalcopyrite thin films is highly desirable. We present results on wet-chemical cleaning procedures of polycrystalline Cu(In1-xGax)Se2 thin films with an average x = [Ga]/([In] + [Ga]) = 0.29, which were exposed to ambient conditions for different times. The hence natively oxidized sample surfaces were etched in KCN- or NH3-based aqueous solutions. By x-ray photoelectron spectroscopy, we find that the KCN treatment results in a chemical surface structure which is - apart from a slight change in surface composition - identical to a pristine as-received sample surface. Additionally, we discover a different oxidation behavior of In and Ga, in agreement with thermodynamic reference data, and we find indications for the segregation and removal of copper selenide surface phases from the polycrystalline material.

  14. Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Kulkarni, Shashank R.; Chavan, Sanjay S.; Ghongadi, Shantinath R.

    2005-01-01

    Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

  15. Absorption of surface acoustic waves by topological insulator thin films

    SciTech Connect

    Li, L. L.; Xu, W.

    2014-08-11

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies.

  16. XPS and Raman study of slope-polished Cu(In,Ga)Se2 thin films

    NASA Astrophysics Data System (ADS)

    Beak, Gun Yeol; Jeon, Chan-Wook

    2016-05-01

    The growth of quality Cu(In,Ga)Se2 photovoltaic absorber without secondary phases is very important for improving the solar cell efficiency. Although X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy can identify the secondary phases, they provide insufficient information because of their insufficient resolution and complexity in analysis. In general, normal Raman spectroscopy is better for the analysis of secondary phases. On the other hand, the Raman signal provides information for film depths of less than 300 nm, and the Raman information cannot represent the properties of the entire film. In this regard, the authors introduce a new way of identifying secondary phases in Cu(In,Ga)Se2 films using depth Raman analysis. The as-prepared film was polished using a dimple grinder, which expanded a 2 μm thick film to approximately 1 mm, which is more than sufficient to resolve the depth distribution. Raman analysis indicated that the Cu(In,Ga)Se2 film showed different secondary phases, such as CuIn3Se5, InSe and CuSe, present in different depths of the film, whereas XPS provided complex information about the phases. Overall, the present study emphasizes that the Raman depth profile is more efficient for the identification of secondary phases in Cu(In,Ga)Se2 thin films than XPS and XRD. [Figure not available: see fulltext.

  17. CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005

    SciTech Connect

    Dhere, N. G.

    2006-02-01

    This report describes the I-III-VI2 compounds that are developing into a promising material to meet the energy requirement of the world. CuInSe2 (CIS) and its alloy with Ga and S have shown long-term stability and highest conversion efficiency of 19.5%. Among the various ways of preparing CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells, co-evaporation and sputtering techniques are the most promising. Sputtering is an established process for very high-throughput manufacturing. ARCO Solar, now Shell Solar, pioneered the work in CIS using the sputtering technique. The two-stage process developed by ARCO Solar involved sputtering of a copper and indium layer on molybdenum-coated glass as the first step. In the second step, the copper-indium layers were exposed to a selenium-bearing gas such as hydrogen selenide (H2Se) mixed with argon. The hydrogen selenide breaks down and leaves selenium, which reacts and mixes with the copper and indium in such a way to produce very high-quality CIS absorber layer. Sputtering technology has the added advantage of being easily scaled up and promotes roll-to-roll production on flexible substrates. Preliminary experiments were carried out. ZnO/ZnO:Al deposition by RF magnetron sputtering and CdS deposition by chemical-bath deposition are being carried out on a routine basis.

  18. A Optical and Microstructural Characterization Study and Microstructural Model of Co-Evaporated Polycrystalline Thin Film Copper Indium Diselenide for Photovoltaic Applications

    NASA Astrophysics Data System (ADS)

    Tuttle, John R.

    The electrical, optical, microstructural, and morphological properties of polycrystalline thin film CuInSe _2 are investigated by X-Ray Diffraction, spectrophotometry, and Transmission Electron Microscopy as a function of compositional parameters and processing conditions. The film microstructure is redefined as a compositionally and temperature dependent polycrystalline aggregate mixture of CuInSe_2 and Cu_{rm x}Se/In _{rm y}Se minor phases, with a core crystallite exhibiting order-disorder phase separation and a CuInSe_2-CuIn_2 Se_{3.5} solid solution. The secondary phase phenomena includes Cu _{1.85}Se at grain boundaries and free surfaces, with sufficient amount for percolation in near-stoichiometric and Cu-rich compositions, and Cu _{rm x}Se inclusions for Cu-rich compositions, and for Cu-poor compositions at substrate temperatures of 500^circC. The inclusions are modeled by the Maxwell-Garnett theory as metallic inclusions with a filling fraction as little as eta = 0.01. The observed polymorphisms include phase separation of ordered chalcopyrite and disordered sphalerite regions, where the latter is the majority phase, and a solid solution of chalcopyrite CuInSe_2 and the ordered vacancy compound (OVC) CuIn_2Se _{3.5}, with an associated temperature dependent lattice shrinkage proportional to the deviation in molecularity. The polymorphisms reported here are the first in the CuInSe_2 material system. The stability of excessive Cu-vacancies observed in the OVC has significant ramifications on the electronic structure of CuInSe_2. The optical absorption coefficient, alpha , for thin film CuInSe_2 is reported as a function of composition and exhibits behavior indicative of a two-phase mixture and a solid solution for Cu-rich and Cu-poor compositions, respectively. The magnitude of alpha is significantly lower than previously reported values, and is substantiated by device modeling that accurately reproduces the measured internal quantum efficiency of Cd

  19. Sustainable, Rapid Synthesis of Bright-Luminescent CuInS2-ZnS Alloyed Nanocrystals: Multistage Nano-xenotoxicity Assessment and Intravital Fluorescence Bioimaging in Zebrafish-Embryos

    NASA Astrophysics Data System (ADS)

    Chetty, S. Shashank; Praneetha, S.; Basu, Sandeep; Sachidanandan, Chetana; Murugan, A. Vadivel

    2016-05-01

    Near-infrared (NIR) luminescent CuInS2-ZnS alloyed nanocrystals (CIZS-NCs) for highly fluorescence bioimaging have received considerable interest in recent years. Owing, they became a desirable alternative to heavy-metal based-NCs and organic dyes with unique optical properties and low-toxicity for bioimaging and optoelectronic applications. In the present study, bright and robust CIZS-NCs have been synthesized within 5 min, as-high-as 230 °C without requiring any inert-gas atmosphere via microwave-solvothermal (MW-ST) method. Subsequently, the in vitro and in vivo nano-xenotoxicity and cellular uptake of the MUA-functionalized CIZS-NCs were investigated in L929, Vero, MCF7 cell lines and zebrafish-embryos. We observed minimal toxicity and acute teratogenic consequences upto 62.5 μg/ml of the CIZS-NCs in zebrafish-embryos. We also observed spontaneous uptake of the MUA-functionalized CIZS-NCs by 3 dpf older zebrafish-embryos that are evident through bright red fluorescence-emission at a low concentration of 7.8 μg/mL. Hence, we propose that the rapid, low-cost, large-scale “sustainable” MW-ST synthesis of CIZS-NCs, is an ideal bio-nanoprobe with good temporal and spatial resolution for rapid labeling, long-term in vivo tracking and intravital-fluorescence-bioimaging (IVBI).

  20. Pyrolyzed thin film carbon

    NASA Technical Reports Server (NTRS)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  1. Investigation of Au9+ swift heavy ion irradiation on CdS/CuInSe2 thin films

    NASA Astrophysics Data System (ADS)

    Joshi, Rajesh A.; Taur, Vidya S.; Singh, Fouran; Sharma, Ramphal

    2013-10-01

    In the present manuscript we report about the preparation of CdS/CuInSe2 heterojunction thin films by chemical ion exchange method and investigation of 120 MeV Au9+ swift heavy ions (SHI) irradiation effect on its physicochemical as well as optoelectronic properties. These pristine (as grown) samples are irradiated with 120 MeV Au9+ SHI of 5×1011 and 5×1012 ions/cm2 fluencies and later on characterized for structural, compositional, morphological, optical and I-V characteristics. X-ray diffraction (XRD) pattern obtained from pristine and irradiated films shows considerable modifications in peak intensity as well as rising of some new peaks, corresponding to In2Se3, Cu3Se2 and CuIn2Se3 materials. Transmission electron microscope (TEM) images show decrease in grain size upon increase in irradiation ion fluencies, which is also supported from the observation of random and uneven distribution of nano-grains as confirmed through scanning electron microscope (SEM) images. Presence of Cd, Cu, In, S and Se in energy dispersive X-ray spectrum analysis (EDAX) confirms the expected and observed elemental composition in thin films, the absorbance peaks are related to band to band transitions and spin orbit splitting while energy band gap is observed to increase from 1.36 for pristine to 1.53 eV for SHI irradiated thin films and I-V characteristics under illumination to 100 mW/cm2 light source shows enhancement in conversion efficiency from 0.26 to 1.59% upon irradiation.

  2. CuInSe2 thin films and high-efficiency solar cells obtained by selenization of metallic layers

    NASA Astrophysics Data System (ADS)

    Basol, Bulent M.; Kapur, Vijay K.

    Evaporated Cu-In layers have been selenized, and the morphology of the resulting CuInSe2 (CIS) films has been compared with that of the electrodeposited/selenized CIS layers. The evaporation process causes considerable alloying between the Cu and In films and reduces the grain size of the selenized material. Close to 11 percent efficiency has been demonstrated for solar cells made on selenized Cu-In alloy films.

  3. Evaluation of diffusion-recombination parameters in electrodeposited CuIn(S, Se) 2 solar cells by means of electron beam induced current experiments and modelling

    NASA Astrophysics Data System (ADS)

    Sieber, B.; Ruiz, C. M.; Bermudez, V.

    2009-04-01

    Thin-film solar cells with a Cu-based chalcopyrite absorber achieve high conversion efficiencies (up to 20%). Their technology being more cost effective than the crystalline silicon technologies, they are expected to replace Si-based solar cells. But a best cost-performance ratio requires first a knowledge of the parameters which ascertain the electrical quality of the solar cell. The first of them is the minority carrier diffusion length in the absorber and the second one is the collection efficiency of the p-n junction space charge region (SCR) located within the absorber. A low value of at least one of them drastically reduces the efficiency of the cell. In this paper we present an electron-beam-induced-current (EBIC) determination of these two parameters in CIS solar cells.

  4. Sustainable, Rapid Synthesis of Bright-Luminescent CuInS2-ZnS Alloyed Nanocrystals: Multistage Nano-xenotoxicity Assessment and Intravital Fluorescence Bioimaging in Zebrafish-Embryos

    PubMed Central

    Chetty, S. Shashank; Praneetha, S.; Basu, Sandeep; Sachidanandan, Chetana; Murugan, A. Vadivel

    2016-01-01

    Near-infrared (NIR) luminescent CuInS2-ZnS alloyed nanocrystals (CIZS-NCs) for highly fluorescence bioimaging have received considerable interest in recent years. Owing, they became a desirable alternative to heavy-metal based-NCs and organic dyes with unique optical properties and low-toxicity for bioimaging and optoelectronic applications. In the present study, bright and robust CIZS-NCs have been synthesized within 5 min, as-high-as 230 °C without requiring any inert-gas atmosphere via microwave-solvothermal (MW-ST) method. Subsequently, the in vitro and in vivo nano-xenotoxicity and cellular uptake of the MUA-functionalized CIZS-NCs were investigated in L929, Vero, MCF7 cell lines and zebrafish-embryos. We observed minimal toxicity and acute teratogenic consequences upto 62.5 μg/ml of the CIZS-NCs in zebrafish-embryos. We also observed spontaneous uptake of the MUA-functionalized CIZS-NCs by 3 dpf older zebrafish-embryos that are evident through bright red fluorescence-emission at a low concentration of 7.8 μg/mL. Hence, we propose that the rapid, low-cost, large-scale “sustainable” MW-ST synthesis of CIZS-NCs, is an ideal bio-nanoprobe with good temporal and spatial resolution for rapid labeling, long-term in vivo tracking and intravital-fluorescence-bioimaging (IVBI). PMID:27188464

  5. Influence of a Boron Precursor on the Growth and Optoelectronic Properties of Electrodeposited Zinc Oxide Thin Film.

    PubMed

    Tsin, Fabien; Thomere, Angélica; Bris, Arthur Le; Collin, Stéphane; Lincot, Daniel; Rousset, Jean

    2016-05-18

    Highly transparent and conductive materials are required for many industrial applications. One of the interesting features of ZnO is the possibility to dope it using different elements, hence improving its conductivity. Results concerning the zinc oxide thin films electrodeposited in a zinc perchlorate medium containing a boron precursor are presented in this study. The addition of boron to the electrolyte leads to significant effects on the morphology and crystalline structure as well as an evolution of the optical properties of the material. Varying the concentration of boric acid from 0 to 15 mM strongly improves the compactness of the deposit and increases the band gap from 3.33 to 3.45 eV. Investigations were also conducted to estimate and determine the influence of boric acid on the electrical properties of the ZnO layers. As a result, no doping effect effect by boron was demonstrated. However, the role of boric acid on the material quality has also been proven and discussed. Boric acid strongly contributes to the growth of high quality electrodeposited zinc oxide. The high doping level of the film can be attributed to the perchlorate ions introduced in the bath. Finally, a ZnO layer electrodeposited in a boron rich electrolyte was tested as front contact of a Cu(In, Ga)(S, Se)2 based solar cell. An efficiency of 12.5% was measured with a quite high fill factor (>70%) which confirms the high conductivity of the ZnO thin film. PMID:27111517

  6. Influence of a Boron Precursor on the Growth and Optoelectronic Properties of Electrodeposited Zinc Oxide Thin Film.

    PubMed

    Tsin, Fabien; Thomere, Angélica; Bris, Arthur Le; Collin, Stéphane; Lincot, Daniel; Rousset, Jean

    2016-05-18

    Highly transparent and conductive materials are required for many industrial applications. One of the interesting features of ZnO is the possibility to dope it using different elements, hence improving its conductivity. Results concerning the zinc oxide thin films electrodeposited in a zinc perchlorate medium containing a boron precursor are presented in this study. The addition of boron to the electrolyte leads to significant effects on the morphology and crystalline structure as well as an evolution of the optical properties of the material. Varying the concentration of boric acid from 0 to 15 mM strongly improves the compactness of the deposit and increases the band gap from 3.33 to 3.45 eV. Investigations were also conducted to estimate and determine the influence of boric acid on the electrical properties of the ZnO layers. As a result, no doping effect effect by boron was demonstrated. However, the role of boric acid on the material quality has also been proven and discussed. Boric acid strongly contributes to the growth of high quality electrodeposited zinc oxide. The high doping level of the film can be attributed to the perchlorate ions introduced in the bath. Finally, a ZnO layer electrodeposited in a boron rich electrolyte was tested as front contact of a Cu(In, Ga)(S, Se)2 based solar cell. An efficiency of 12.5% was measured with a quite high fill factor (>70%) which confirms the high conductivity of the ZnO thin film.

  7. Thin film hydrogen sensor

    DOEpatents

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  8. Premelting of thin wires

    NASA Astrophysics Data System (ADS)

    Gülseren, O.; Ercolessi, F.; Tosatti, E.

    1995-03-01

    We have investigated the melting behavior of thin lead wires using molecular dynamics. We find that-in analogy with cluster melting-the melting temperature Tm(R) of a wire with radius R is lower than that of a bulk solid Tbm by Tm(R)=Tbm-c/R. Surface melting effects, with formation of a thin skin of highly diffusive atoms at the wire surface, are observed. The diffusivity is lower over (111)-oriented faces, and higher at (110) and (100) rounded areas. The possible relevance to recent results on nonrupturing thin necks between a scanning tunnel microscope tip and a warm surface is addressed.

  9. Thin film hydrogen sensor

    DOEpatents

    Cheng, Yang-Tse; Poli, Andrea A.; Meltser, Mark Alexander

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  10. Electrochemical thinning of silicon

    DOEpatents

    Medernach, John W.

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  11. Electrochemical thinning of silicon

    DOEpatents

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  12. Biomimetic thin film synthesis

    SciTech Connect

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  13. Ceramic Composite Thin Films

    NASA Technical Reports Server (NTRS)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  14. Super Thin Ceramic Coatings

    NASA Video Gallery

    New technology being developed at NASA's Glenn Research Center creates super thin ceramic coatings on engine components. The Plasma Spray – Physical Vapor Deposition (PS-PVD) rig uses a powerful ...

  15. Thin silicon solar cells

    NASA Astrophysics Data System (ADS)

    Hall, R. B.; Bacon, C.; Direda, V.; Ford, D. H.; Ingram, A. E.; Cotter, J.; Hughes-Lampros, T.; Rand, J. A.; Ruffins, T. R.; Barnett, A. M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (less than 50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  16. Multifunctional thin film surface

    DOEpatents

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  17. Thin silicon solar cells

    SciTech Connect

    Hall, R.B.; Bacon, C.; DiReda, V.; Ford, D.H.; Ingram, A.E.; Cotter, J.; Hughes-Lampros, T.; Rand, J.A.; Ruffins, T.R.; Barnett, A.M.

    1992-12-01

    The silicon-film design achieves high performance by using a dun silicon layer and incorporating light trapping. Optimally designed thin crystalline solar cells (<50 microns thick) have performance advantages over conventional thick devices. The high-performance silicon-film design employs a metallurgical barrier between the low-cost substrate and the thin silicon layer. Light trapping properties of silicon-film on ceramic solar cells are presented and analyzed. Recent advances in process development are described here.

  18. Growth and optoelectronic characteristic of n-Si/p-CuIn(S 1-xSe x) 2 thin-film solar cell by solution growth technique

    NASA Astrophysics Data System (ADS)

    Chavhan, S.; Sharma, R.

    2006-07-01

    The p-CuIn(S 1-xSe x) 2 (CISS) thin films have been grown on n-Si substrate by solution growth technique. The deposition parameters, such as pH (10.5), deposition time (60 min), deposition temperature (50 °C), and concentration of bath solution (0.1 M) were optimized. Elemental analysis of the p-CuIn(S 1-xSe x) 2 thin film was confirmed by energy-dispersive analysis of X-ray (EDAX). The SEM study of absorber layer shows the uniform morphology of film as well as the continuous smooth deposition onto the n-Si substrates, whose grain size is 130 nm. CuIn(S 1-xSe x) 2 ( x=0.5) reveals (1 1 2) orientation peak and exhibits the chalcopyrite structure with lattice constant a=5.28 Å and c=11.45 Å. The J- V characteristics were measured in dark and light. The device parameters have been calculated for solar cell fabrication, V=411.09 mV, and J=14.55 mA. FF=46.55% and η=4.64% under an illumination of 60 mW/cm 2. The J- V characteristics of the device under dark condition were also studied and the ideality factor was calculated, which is equal to 2.2 for n-Si/p-CuIn(S 0.5Se 0.5) 2 heterojunction thin film.

  19. Lithospheric and crustal thinning

    NASA Technical Reports Server (NTRS)

    Moretti, I.

    1985-01-01

    In rift zones, both the crust and the lithosphere get thinner. The amplitude and the mechanism of these two thinning situations are different. The lithospheric thinning is a thermal phenomenon produced by an asthenospherical uprising under the rift zone. In some regions its amplitude can exceed 200%. This is observed under the Baikal rift where the crust is directly underlaid by the mantellic asthenosphere. The presence of hot material under rift zones induces a large negative gravity anomaly. A low seismic velocity zone linked to this thermal anomaly is also observed. During the rifting, the magmatic chambers get progressively closer from the ground surface. Simultaneously, the Moho reflector is found at shallow depth under rift zones. This crustal thinning does not exceed 50%. Tectonic stresses and vertical movements result from the two competing effects of the lithospheric and crustal thinning. On the one hand, the deep thermal anomaly induces a large doming and is associated with extensive deviatoric stresses. On the other hand, the crustal thinning involves the formation of a central valley. This subsidence is increased by the sediment loading. The purpose here is to quantify these two phenomena in order to explain the morphological and thermal evolution of rift zones.

  20. Thin film photovoltaics

    SciTech Connect

    Zweibel, K; Ullal, H S

    1989-05-01

    Thin films are considered a potentially attractive technological approach to making cost-effective electricity by photovoltaics. Over the last twenty years, many have been investigated and some (cadmium telluride, copper indium diselenide, amorphous silicon) have become leading candidates for future large-scale commercialization. This paper surveys the past development of these key thin films and gives their status and future prospects. In all cases, significant progress toward cost-effective PV electricity has been made. If this progress continues, it appears that thin film PV could provide electricity that is competitive for summer daytime peaking power requirements by the middle of the 1990s; and electricity in a range that is competitive with fossil fuel costs (i.e., 6 cents/kilowatt-hour) should be available from PV around the turn of the century. 22 refs., 9 figs.

  1. Thin film temperature sensor

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.

    1980-01-01

    Thin film surface temperature sensors were developed. The sensors were made of platinum-platinum/10 percent rhodium thermocouples with associated thin film-to-lead wire connections and sputtered on aluminum oxide coated simulated turbine blades for testing. Tests included exposure to vibration, low velocity hydrocarbon hot gas flow to 1250 K, and furnace calibrations. Thermal electromotive force was typically two percent below standard type S thermocouples. Mean time to failure was 42 hours at a hot gas flow temperature of 1250 K and an average of 15 cycles to room temperature. Failures were mainly due to separation of the platinum thin film from the aluminum oxide surface. Several techniques to improve the adhesion of the platinum are discussed.

  2. Thin film ceramic thermocouples

    NASA Technical Reports Server (NTRS)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  3. Thin film photovoltaic device

    DOEpatents

    Catalano, Anthony W.; Bhushan, Manjul

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  4. Shear Thinning in Xenon

    NASA Technical Reports Server (NTRS)

    Bergm Robert F.; Moldover, Michael R.; Yao, Minwu; Zimmerli, Gregory A.

    2009-01-01

    We measured shear thinning, a viscosity decrease ordinarily associated with complex liquids such as molten plastics or ketchup, near the critical point of xenon. The data span a wide range of dimensionless shear rate: the product of the shear rate and the relaxation time of critical fluctuations was greater than 0.001 and was less than 700. As predicted by theory, shear thinning occurred when this product was greater than 1. The measurements were conducted aboard the Space Shuttle Columbia to avoid the density stratification caused by Earth's gravity.

  5. Thin-film optical initiator

    DOEpatents

    Erickson, Kenneth L.

    2001-01-01

    A thin-film optical initiator having an inert, transparent substrate, a reactive thin film, which can be either an explosive or a pyrotechnic, and a reflective thin film. The resultant thin-film optical initiator system also comprises a fiber-optic cable connected to a low-energy laser source, an output charge, and an initiator housing. The reactive thin film, which may contain very thin embedded layers or be a co-deposit of a light-absorbing material such as carbon, absorbs the incident laser light, is volumetrically heated, and explodes against the output charge, imparting about 5 to 20 times more energy than in the incident laser pulse.

  6. Thin-film coatings

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1980-01-01

    Thin, adherent, high density films are discussed with respect to their application in two plasma physics techniques (ion plating and sputtering). The operation of each technique is described as well as what surfaces can be coated, and what kind of materials can be applied. The effects of these films on the mechanical properties of solid surfaces are also discussed.

  7. Thin Lens Ray Tracing.

    ERIC Educational Resources Information Center

    Gatland, Ian R.

    2002-01-01

    Proposes a ray tracing approach to thin lens analysis based on a vector form of Snell's law for paraxial rays as an alternative to the usual approach in introductory physics courses. The ray tracing approach accommodates skew rays and thus provides a complete analysis. (Author/KHR)

  8. Treading on Thin Water.

    ERIC Educational Resources Information Center

    Haley, Richard D.

    1985-01-01

    Provides a simple introduction to animals whose habitat is the thin surface film of water. Describes adaptive mechanisms of water striders, whirlygigs and riffle bugs and suggests ways to observe them in the wild or as aquarium animals. Includes basic demonstrations of the nature of surface tension. (JHZ)

  9. Thin film photovoltaic cell

    DOEpatents

    Meakin, John D.; Bragagnolo, Julio

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  10. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  11. Thin Wall Iron Castings

    SciTech Connect

    J.F. Cuttino; D.M. Stefanescu; T.S. Piwonka

    2001-10-31

    Results of an investigation made to develop methods of making iron castings having wall thicknesses as small as 2.5 mm in green sand molds are presented. It was found that thin wall ductile and compacted graphite iron castings can be made and have properties consistent with heavier castings. Green sand molding variables that affect casting dimensions were also identified.

  12. Thin films for material engineering

    NASA Astrophysics Data System (ADS)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  13. Modern Thin-Layer Chromatography.

    ERIC Educational Resources Information Center

    Poole, Colin F.; Poole, Salwa K.

    1989-01-01

    Some of the important modern developments of thin-layer chromatography are introduced. Discussed are the theory and instrumentation of thin-layer chromatography including multidimensional and multimodal techniques. Lists 53 references. (CW)

  14. Thin film solar cell workshop

    NASA Technical Reports Server (NTRS)

    Armstrong, Joe; Jeffrey, Frank

    1993-01-01

    A summation of responses to questions posed to the thin-film solar cell workshop and the ensuing discussion is provided. Participants in the workshop included photovoltaic manufacturers (both thin film and crystalline), cell performance investigators, and consumers.

  15. NMR characterization of thin films

    DOEpatents

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  16. NMR characterization of thin films

    DOEpatents

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  17. CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

    NASA Technical Reports Server (NTRS)

    Dhere, Neelkanth G.; Ghongadi, Shantinath R.; Pandit, Mandar B.; Jahagirdar, Anant H.; Scheiman, David

    2002-01-01

    CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal

  18. Recent Developments in Chalcopyrite Solar Cell and Module Technologies

    NASA Astrophysics Data System (ADS)

    Ishizuka, Shogo; Komaki, Hironori; Yoshiyama, Takashi; Mizukoshi, Kazuyuki; Yamada, Akimasa; Niki, Shigeru

    Chalcopyrite Cu(In, Ga)Se2(CIGS) and related compounds belong to the semiconducting I-III-VI2 materials family and are most promising thin film solar cells which have demonstrated up to 20% cell efficiencies and over 15% module efficiencies to date. Many CIGS companies in EU, US, and Japan have started several ten MW/year scale commercial production and have announced to increase their production capacities further within a couple of years. In this review, recent developments in highly efficient CIGS module technologies and issues to be solved for further development are discussed. Recent progress in the development of reliable alkali incorporation control techniques which is required to demonstrate high cell efficiencies from flexible CIGS cells fabricated on alkali-free substrates is also introduced. The mechanism behind the beneficial effects of alkali doping into CIGS absorber layers is also discussed.

  19. A novel ``flat-plate'' PV concentrator package

    NASA Astrophysics Data System (ADS)

    Tuttle, J. R.; Cole, E. D.; Berens, T. A.; Szalaj, A.; Keane, J.; Alleman, J.

    1999-03-01

    DayStar Technologies is developing a PV module technology using low-level concentration (2-8 suns) that can package existing industry cell materials into a lower cost/higher value product suitable for both low-power (10W) solar lantern and 1-KW and greater power generation applications. Cell materials incorporated to date include Cu(In, Ga)Se2(CIGS), a-Si, and c-Si. The use of thin-film cell materials in a concentrator application is the first of its kind. The performance and reliability of CIGS and a-Si under concentration has been demonstrated. The efficacy of the proprietary optics developed by DayStar has been demonstrated. Cell integration and subsequent mating to optics has proven to be nearly lossless. A 7.2% active-area CIGS-based mini-module has been measured.

  20. [Spectral emissivity of thin films].

    PubMed

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  1. Biomimetic thin film deposition

    SciTech Connect

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  2. Shear-thinning Fluid

    NASA Technical Reports Server (NTRS)

    2001-01-01

    Whipped cream and the filling for pumpkin pie are two familiar materials that exhibit the shear-thinning effect seen in a range of industrial applications. It is thick enough to stand on its own atop a piece of pie, yet flows readily when pushed through a tube. This demonstrates the shear-thinning effect that was studied with the Critical Viscosity of Xenon Experiment (CVX-2) on the STS-107 Research 1 mission in 2002. CVX observed the behavior of xenon, a heavy inert gas used in flash lamps and ion rocket engines, at its critical point. The principal investigator was Dr. Robert Berg of the National Institutes of Standards and Technology in Gaithersburg, MD.

  3. Advanced thin film thermocouples

    NASA Technical Reports Server (NTRS)

    Kreider, K. G.; Semancik, S.; Olson, C.

    1984-01-01

    The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

  4. Thin, Lightweight Solar Cell

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr.; Weinberg, Irving

    1991-01-01

    Improved design for thin, lightweight solar photovoltaic cells with front contacts reduces degradation of electrical output under exposure to energetic charged particles (protons and electrons). Increases ability of cells to maintain structural integrity under exposure to ultraviolet radiation by eliminating ultraviolet-degradable adhesives used to retain cover glasses. Interdigitated front contacts and front junctions formed on semiconductor substrate. Mating contacts formed on back surface of cover glass. Cover glass and substrate electrostatically bonded together.

  5. Ultra-Thin, Flexible Electronics

    NASA Technical Reports Server (NTRS)

    Holland, Brian; McPherson, Ryan; Zhang, Tan; Hou, Zhenwei; Dean, Robert; Johnson, R. Wayne; DelCastillo, Linda; Moussessian, Alina

    2008-01-01

    Thinned die can be used to realize ultra-thin flexible electronics for applications such as conformal and wearable electronics. Three techniques have been developed to achieve this goal using thinned die: die flip chip bonded onto flexible substrates, die laminated onto LCP films, and die embedded in polyimide. A key to achieving each of these techniques is the thinning of die to a thickness of 50 microns or thinner. Conventional CMP processing can be used to thin to 50 microns. At 50 microns, the active die become flexible and must be handled by temporarily bonding them to a holder die, for further processing. Once bonded face down to the holder die, the active die can be further thinned by DRIE etching the exposed backside. The thinned die can then been packaged in or on the flexible substrate.

  6. Thin film superconductor magnetic bearings

    DOEpatents

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  7. On the theory of thin and thin-walled rods

    NASA Technical Reports Server (NTRS)

    Dzhanelidze, G Y

    1951-01-01

    Through the work of V. Z. Vlasov a theory of thin-walled rods has been established that is widely applicable in practice. This theory was extended by A. A. Umanski to thin-walled rods of closed profile section. The authors based their work on the concepts of the modern theory of shells. An attempt is made herein to construct a theory of thin-walled rods including the classical theory of deformation of thin rods by making use of a kinematic assumption.

  8. Carbon thin film thermometry

    NASA Technical Reports Server (NTRS)

    Collier, R. S.; Sparks, L. L.; Strobridge, T. R.

    1973-01-01

    The work concerning carbon thin film thermometry is reported. Optimum film deposition parameters were sought on an empirical basis for maximum stability of the films. One hundred films were fabricated for use at the Marshall Space Flight Center; 10 of these films were given a precise quasi-continuous calibration of temperature vs. resistance with 22 intervals between 5 and 80 K using primary platinum and germanium thermometers. Sensitivity curves were established and the remaining 90 films were given a three point calibration and fitted to the established sensitivity curves. Hydrogen gas-liquid discrimination set points are given for each film.

  9. Thin film hydrogen sensor

    DOEpatents

    Lauf, Robert J.; Hoffheins, Barbara S.; Fleming, Pamela H.

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  10. Method for thinning specimen

    DOEpatents

    Follstaedt, David M.; Moran, Michael P.

    2005-03-15

    A method for thinning (such as in grinding and polishing) a material surface using an instrument means for moving an article with a discontinuous surface with an abrasive material dispersed between the material surface and the discontinuous surface where the discontinuous surface of the moving article provides an efficient means for maintaining contact of the abrasive with the material surface. When used to dimple specimens for microscopy analysis, a wheel with a surface that has been modified to produce a uniform or random discontinuous surface significantly improves the speed of the dimpling process without loss of quality of finish.

  11. Thin film magnetism

    SciTech Connect

    Bader, S.D. )

    1990-06-01

    New developments in thin-film magnetism are reviewed with an emphasis on the ultrathin regime. The scope includes relatively simple metallic systems in overlayer, sandwich, and superlattice configurations. Sample fabrication, characterization, and magnetic measurement techniques are outlined by highlighting some of the more modern experimental innovations. Current issues and advances that demonstrate the symbiotic relationship between experiment and theory are then examined, including the surface magnetic anisotropy, the two-dimensional critical behavior, the creation of metastable phases via epitaxy, and phenomena associated with coupled magnetic layers. The review ends with a brief account of the impact of the various contemporary developments on the applications area.

  12. Polycrystalline thin film photovoltaic technology

    SciTech Connect

    Ullal, H.S.; Zweibel, K.; Mitchell, R.L.; Noufi, R.

    1991-03-01

    Low-cost, high-efficiency thin-film modules are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. In this paper we review the significant technical progress made in the following thin films: copper indium diselenide, cadmium telluride, and polycrystalline thin silicon films. Also, the recent US DOE/SERI initiative to commercialize these emerging technologies is discussed. 6 refs., 9 figs.

  13. Thin-Film Power Transformers

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.

    1995-01-01

    Transformer core made of thin layers of insulating material interspersed with thin layers of ferromagnetic material. Flux-linking conductors made of thinner nonferromagnetic-conductor/insulator multilayers wrapped around core. Transformers have geometric features finer than those of transformers made in customary way by machining and mechanical pressing. In addition, some thin-film materials exhibit magnetic-flux-carrying capabilities superior to those of customary bulk transformer materials. Suitable for low-cost, high-yield mass production.

  14. Cortical thinning in psychopathy

    PubMed Central

    Ly, Martina; Motzkin, Julian C.; Philippi, Carissa L.; Kirk, Gregory R.; Newman, Joseph P.; Kiehl, Kent A.; Koenigs, Michael

    2013-01-01

    Objective Psychopathy is a personality disorder associated with severely antisocial behavior and a host of cognitive and affective deficits. The neuropathological basis of the disorder has not been clearly established. Cortical thickness is a sensitive measure of brain structure that has been used to identify neurobiological abnormalities in a number of psychiatric disorders. The purpose of this study is to evaluate cortical thickness and corresponding functional connectivity in criminal psychopaths. Method Using T1 MRI data, we computed cortical thickness maps in a sample of adult male prison inmates selected based on psychopathy diagnosis (n=21 psychopathic inmates, n=31 non-psychopathic inmates). Using rest-fMRI data from a subset of these inmates (n=20 psychopathic inmates, n=20 non-psychopathic inmates), we then computed functional connectivity within networks exhibiting significant thinning among psychopaths. Results Relative to non-psychopaths, psychopaths exhibited significantly thinner cortex in a number of regions, including left insula and dorsal anterior cingulate cortex, bilateral precentral gyrus, bilateral anterior temporal cortex, and right inferior frontal gyrus. These neurostructural differences were not due to differences in age, IQ, or substance abuse. Psychopaths also exhibited a corresponding reduction in functional connectivity between left insula and left dorsal anterior cingulate cortex. Conclusions Psychopathy is associated with a distinct pattern of cortical thinning and reduced functional connectivity. PMID:22581200

  15. Thin film mechanics

    NASA Astrophysics Data System (ADS)

    Cooper, Ryan C.

    This doctoral thesis details the methods of determining mechanical properties of two classes of novel thin films suspended two-dimensional crystals and electron beam irradiated microfilms of polydimethylsiloxane (PDMS). Thin films are used in a variety of surface coatings to alter the opto-electronic properties or increase the wear or corrosion resistance and are ideal for micro- and nanoelectromechanical system fabrication. One of the challenges in fabricating thin films is the introduction of strains which can arise due to application techniques, geometrical conformation, or other spurious conditions. Chapters 2-4 focus on two dimensional materials. This is the intrinsic limit of thin films-being constrained to one atomic or molecular unit of thickness. These materials have mechanical, electrical, and optical properties ideal for micro- and nanoelectromechanical systems with truly novel device functionality. As such, the breadth of applications that can benefit from a treatise on two dimensional film mechanics is reason enough for exploration. This study explores the anomylously high strength of two dimensional materials. Furthermore, this work also aims to bridge four main gaps in the understanding of material science: bridging the gap between ab initio calculations and finite element analysis, bridging the gap between ab initio calculations and experimental results, nanoscale to microscale, and microscale to mesoscale. A nonlinear elasticity model is used to determine the necessary elastic constants to define the strain-energy density function for finite strain. Then, ab initio calculations-density functional theory-is used to calculate the nonlinear elastic response. Chapter 2 focuses on validating this methodology with atomic force microscope nanoindentation on molybdenum disulfide. Chapter 3 explores the convergence criteria of three density functional theory solvers to further verify the numerical calculations. Chapter 4 then uses this model to investigate

  16. Thin film atomic hydrogen detectors

    NASA Technical Reports Server (NTRS)

    Gruber, C. L.

    1977-01-01

    Thin film and bead thermistor atomic surface recombination hydrogen detectors were investigated both experimentally and theoretically. Devices were constructed on a thin Mylar film substrate. Using suitable Wheatstone bridge techniques sensitivities of 80 microvolts/2x10 to the 13th power atoms/sec are attainable with response time constants on the order of 5 seconds.

  17. Thin films: Past, present, future

    SciTech Connect

    Zweibel, K

    1995-04-01

    This report describes the characteristics of the thin film photovoltaic modules necessary for an acceptable rate of return for rural areas and underdeveloped countries. The topics of the paper include a development of goals of cost and performance for an acceptable PV system, a review of current technologies for meeting these goals, issues and opportunities in thin film technologies.

  18. Thin film ion conducting coating

    DOEpatents

    Goldner, Ronald B.; Haas, Terry; Wong, Kwok-Keung; Seward, George

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  19. Polyimide Aerogel Thin Films

    NASA Technical Reports Server (NTRS)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  20. Thin film interconnect processes

    NASA Astrophysics Data System (ADS)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  1. Selective inorganic thin films

    SciTech Connect

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T.

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  2. Ferromagnetic thin films

    DOEpatents

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  3. Ferromagnetic thin films

    DOEpatents

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  4. Thin film hydrogen sensor

    DOEpatents

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  5. Nonlinear optical thin films

    NASA Technical Reports Server (NTRS)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  6. Ultra-Lightweight Hybrid Thin-Film Solar Cells: A Survey of Enabling Technologies for Space Power Applications

    NASA Technical Reports Server (NTRS)

    Hepp, Aloysius F.; McNatt, Jeremiah S.; Bailey, Sheila G.; Dickman, John E.; Raffaelle, Ryne P.; Landi, Brian J.; Anctil, Annick; DiLeo, Roberta; Jin, Michael H.-C.; Lee, Chung-Young; Friske, Theresa J.; Sun, Sam-S.; Zhang, Cheng; Choi, S.; Ledbetter, Abram; Seo, Kang; Bonner, Carl E.; Banger, Kulbinder K.; Castro, Stephanie L.; Rauh, David

    2007-01-01

    The development of hybrid inorganic/organic thin-film solar cells on flexible, lightweight, space-qualified, durable substrates provides an attractive solution for fabricating solar arrays with high mass specific power (W/kg). Next generation thin-film technologies may well involve a revolutionary change in materials to organic-based devices. The high-volume, low-cost fabrication potential of organic cells will allow for square miles of solar cell production at one-tenth the cost of conventional inorganic materials. Plastic solar cells take a minimum of storage space and can be inflated or unrolled for deployment. We will explore a cross-section of in-house and sponsored research efforts that aim to provide new hybrid technologies that include both inorganic and polymer materials as active and substrate materials. Research at University of Texas at Arlington focuses on the fabrication and use of poly(isothianaphthene-3,6-diyl) in solar cells. We describe efforts at Norfolk State University to design, synthesize and characterize block copolymers. A collaborative team between EIC Laboratories, Inc. and the University of Florida is investigating multijunction polymer solar cells to more effectively utilize solar radiation. The National Aeronautics and Space Administration (NASA)/Ohio Aerospace Institute (OAI) group has undertaken a thermal analysis of potential metallized substrates as well as production of nanoparticles of CuInS2 and CuInSe2 in good yield at moderate temperatures via decomposition of single-source precursors. Finally, preliminary work at the Rochester Institute of Technology (R.I.T.) to assess the impact on performance of solar cells of temperature and carbon nanotubes is reported. Technologies that must be developed to enable ultra-lightweight solar arrays include: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. For NASA applications, any solar cell or array technology must not only meet

  7. Host thin films incorporating nanoparticles

    NASA Astrophysics Data System (ADS)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  8. Learning unit: Thin lenses

    NASA Astrophysics Data System (ADS)

    Nita, L.-S.

    2012-04-01

    Learning unit: Thin lenses "Why objects seen through lenses are sometimes upright and sometimes reversed" Nita Laura Simona National College of Arts and Crafts "Constantin Brancusi", Craiova, Romania 1. GEOMETRIC OPTICS. 13 hours Introduction (models, axioms, principles, conventions) 1. Thin lenses (Types of lenses. Defining elements. Path of light rays through lenses. Image formation. Required physical quantities. Lens formulas). 2. Lens systems (Non-collated lenses. Focalless systems). 3. Human eye (Functioning as an optical system. Sight defects and their corrections). 4. Optical instruments (Characteristics exemplified by a magnifying glass. Paths of light rays through a simplified photo camera. Path of light rays through a classical microscope) (Physics curriculum for the IXth grade/ 2011). This scenario exposes a learning unit based on experimental sequences (defining specific competencies), as a succession of lessons started by noticing a problem whose solution assumes the setup of an experiment under laboratory conditions. Progressive learning of theme objectives are realised with sequential experimental steps. The central cognitive process is the induction or the generalization (development of new knowledge based on observation of examples or counterexamples of the concept to be learnt). Pupil interest in theme objectives is triggered by problem-situations, for example: "In order to better see small objects I need a magnifying glass. But when using a magnifier, small object images are sometimes seen upright and sometimes seen reversed!" Along the way, pupils' reasoning will converge to the idea: "The image of an object through a lens depends on the relative distances among object, lens, and observer". Associated learning model: EXPERIMENT Specific competencies: derived from the experiment model, in agreement with the following learning unit steps I. Evoking - Anticipation: Size of the problem, formulation of hypotheses and planning of experiment. II

  9. Synthesis and Characterization of Chalcopyrite (CuInS2 and CuhInSe2) Colloidal Nanoparticles for Optoelectronic Applications via Low-Temperature Pyrolysis of Single-Source Precursors

    NASA Technical Reports Server (NTRS)

    Castro, S. L.; Bailey, S. G.; Raffaelle, R. P.; Banger, K. K.; Fahey, Stephen; Hepp, A. F.

    2003-01-01

    Nanocrystalline (or quantum dot) materials hold potential as components of next-generation photovoltaic (PV) devices. The inclusion of quantum dots in PV devices has been proposed as a means to improve the efficiency of photon conversion (quantum dot solar cell), enable low-cost deposition of thin-films, provide sites for exciton dissociation, and pathways for electron transport. Quantum dots are also expected to be more resistant to degradation from electron, proton, and alpha particle radiation than the corresponding bulk material, a requirement for use in space solar sells. Chalcopyrite nanocrystals can be produced by low-temperature thermal decomposition of single-source precursors such as (PR3)2CuIn(ER')4 (R = Ph, R' = Et, E = S; R = R' = Ph, E = Se). Single-source precursors are molecules which contain all the necessary elements for synthesis of a desired material. Thermal decomposition of the precursor results in the formation of material with the correct stoichiometry as a nanocrystalline powder or a thin film, often at significantly lower temperatures than those typically employed for thin-film deposition by multi-source evaporation techniques, typically less than 500 C. We show that CuInSz and CuInSe2 nanocrystals can be synthesized from the precursors at temperatures as low as 250 C. The nanocrystals are characterized by optical spectroscopy, X-ray diffraction, and electron microscopy.

  10. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm–1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  11. Thin film composite actuators

    NASA Astrophysics Data System (ADS)

    Su, Quanmin; Kim, Taesung; Zheng, Yun; Wuttig, Manfred R.

    1995-05-01

    The mechanical properties of Ni50Ti50 deposited on Si substrates were studied focussing on the interaction of the film and substrate. This interaction determines the transformation characteristics through interface accommodation and mechanical constraints exerted by the substrate stiffness. Substrate stiffness, controlled by the film/substrate thickness ratio, was found to have a substantial influence on the output energy of the film/substrate composite. A switch type composite based on this knowledge was fabricated and tested. The thermo-mechanical properties of Terfenol-D thin films deposited on Si substrates were studied by static and dynamic measurements of film/substrate composite cantilevers. The Curie transition, (Delta) E effect and mechanical damping of the film were measured simultaneously. The stress in the film was controlled by annealing below the recrystallization temperature and determined to vary from -500 MPa, compression, in as deposited films to +480 MPa, tension, in annealed films. The Curie temperature shifts from 80 degree(s)C to 140 degree(s)C as the tension increases while the structure of the film remains amorphous. The stress change induced by annealing also drastically effects the film's damping characteristics. The (Delta) E effect of the amorphous material, about 20%, was used to estimate the magnetostriction, (lambda) s approximately equals 4 (DOT) 10-3.

  12. Chiral atomically thin films

    NASA Astrophysics Data System (ADS)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  13. Thin, Flexible IMM Solar Array

    NASA Technical Reports Server (NTRS)

    Walmsley, Nicholas

    2015-01-01

    NASA needs solar arrays that are thin, flexible, and highly efficient; package compactly for launch; and deploy into large, structurally stable high-power generators. Inverted metamorphic multijunction (IMM) solar cells can enable these arrays, but integration of this thin crystalline cell technology presents certain challenges. The Thin Hybrid Interconnected Solar Array (THINS) technology allows robust and reliable integration of IMM cells into a flexible blanket comprising standardized modules engineered for easy production. The modules support the IMM cell by using multifunctional materials for structural stability, shielding, coefficient of thermal expansion (CTE) stress relief, and integrated thermal and electrical functions. The design approach includes total encapsulation, which benefits high voltage as well as electrostatic performance.

  14. Ultra thin gage plastic film

    NASA Technical Reports Server (NTRS)

    Cox, D. W., Jr.; Struble, A. D.

    1971-01-01

    Process utilizing specially modified conventional equipment, with changes in process temperature, pressure, and cooling requirements produces ultra thin 1.56 micron /0.0614 mil/ thick polyethylene film.

  15. Interference Colors in Thin Films.

    ERIC Educational Resources Information Center

    Armstrong, H. L.

    1979-01-01

    Explains interference colors in thin films as being due to the removal, or considerable reduction, of a certain color by destructive inteference that results in the complementary color being seen. (GA)

  16. Slowly rotating thin shell gravastars

    NASA Astrophysics Data System (ADS)

    Uchikata, Nami; Yoshida, Shijun

    2016-01-01

    We construct the solutions of slowly rotating gravastars with a thin shell. In the zero-rotation limit, we consider the gravastar composed of a de Sitter core, a thin shell, and Schwarzschild exterior spacetime. The rotational effects are treated as small axisymmetric and stationary perturbations. The perturbed internal and external spacetimes are matched with a uniformly rotating thin shell. We assume that the angular velocity of the thin shell, Ω, is much smaller than the Keplerian frequency of the nonrotating gravastar, {{{Ω }}}{{k}}. The solutions within an accuracy up to the second order of {{Ω }}/{{{Ω }}}{{k}} are obtained. The thin shell matter is assumed to be described by a perfect fluid and to satisfy the dominant energy condition in the zero-rotation limit. In this study, we assume that the equation of state for perturbations is the same as that of the unperturbed solution. The spherically symmetric component of the energy density perturbations, δ {σ }0, is assumed to vanish independently of the rotation rate. Based on these assumptions, we obtain many numerical solutions and investigate properties of the rotational corrections to the structure of the thin shell gravastar.

  17. Thin EFG octagons

    NASA Astrophysics Data System (ADS)

    Kalejs, J. P.

    1994-01-01

    Mobil Solar Energy Corporation currently practices a unique crystal growth technology for producing crystalline silicon sheet, which is then cut with lasers into wafers. The wafers are processed into solar cells and incorporated into modules for photovoltaic applications. The silicon sheet is produced using a method known as Edge-defined Film-fed growth (EFG), in the form of hollow eight-sided polygons (octagons) with 10 cm faces. These are grown to lengths of 5 meters and thickness of 300 microns, with continuous melt replenishment, in compact furnaces designed to operate at a high sheet area production area of 135 sq cm/min. The present Photovoltaic Manufacturing Technology (PVMaT) three-year program seeks to advance the manufacturing line capabilities of the Mobil Solar crystal growth and cutting technologies. If successful, these advancements will provide significant reductions in already low silicon raw material usage, improve process productivity, laser cutting throughput and yield, and so lower both individual wafer cost and the cost of module production. This report summarizes the significant technical improvements in EFG technology achieved in Phase 1 of this program. Technical results are reported for each of the three main program areas: (1) thin octagon growth (crystal growth) -- to reduce the thickness of the octagon to an interim goal of 250 microns during Phase 1, with an ultimate goal of achieving 200 micron thicknesses; (2) laser cutting -- to improve the laser cutting process, so as to produce wafers with decreased laser cutting damage at increased wafer throughput rates; and (3) process control and product specification -- to implement advanced strategies in crystal growth process control and productivity designed to increase wafer yields.

  18. Thin film cell development workshop report

    NASA Technical Reports Server (NTRS)

    Woodyard, James R.

    1991-01-01

    The Thin Film Development Workshop provided an opportunity for those interested in space applications of thin film cells to debate several topics. The unique characteristics of thin film cells as well as a number of other issues were covered during the discussions. The potential of thin film cells, key research and development issues, manufacturing issues, radiation damage, substrates, and space qualification of thin film cells were discussed.

  19. Shear Thinning of Noncolloidal Suspensions.

    PubMed

    Vázquez-Quesada, Adolfo; Tanner, Roger I; Ellero, Marco

    2016-09-01

    Shear thinning-a reduction in suspension viscosity with increasing shear rates-is understood to arise in colloidal systems from a decrease in the relative contribution of entropic forces. The shear-thinning phenomenon has also been often reported in experiments with noncolloidal systems at high volume fractions. However its origin is an open theoretical question and the behavior is difficult to reproduce in numerical simulations where shear thickening is typically observed instead. In this letter we propose a non-Newtonian model of interparticle lubrication forces to explain shear thinning in noncolloidal suspensions. We show that hidden shear-thinning effects of the suspending medium, which occur at shear rates orders of magnitude larger than the range investigated experimentally, lead to significant shear thinning of the overall suspension at much smaller shear rates. At high particle volume fractions the local shear rates experienced by the fluid situated in the narrow gaps between particles are much larger than the averaged shear rate of the whole suspension. This allows the suspending medium to probe its high-shear non-Newtonian regime and it means that the matrix fluid rheology must be considered over a wide range of shear rates. PMID:27636496

  20. Thin-film metal hydrides.

    PubMed

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  1. Obese people's perceptions of the thin ideal.

    PubMed

    Couch, Danielle; Thomas, Samantha L; Lewis, Sophie; Blood, R Warwick; Holland, Kate; Komesaroff, Paul

    2016-01-01

    The media play a key role in promoting the thin ideal. A qualitative study, in which we used in depth interviews and thematic analysis, was undertaken to explore the attitudes of 142 obese individuals toward media portrayals of the thin ideal. Participants discussed the thin ideal as a social norm that is also supported through the exclusion of positive media portrayals of obese people. They perceived the thin ideal as an 'unhealthy' mode of social control, reflecting on their personal experiences and their concerns for others. Participants' perceptions highlighted the intersections between the thin ideal and gender, grooming and consumerism. Participants' personal responses to the thin ideal were nuanced--some were in support of the thin ideal and some were able to critically reflect and reject the thin ideal. We consider how the thin ideal may act as a form of synoptical social control, working in tandem with wider public health panoptical surveillance of body weight. PMID:26685706

  2. Obese people's perceptions of the thin ideal.

    PubMed

    Couch, Danielle; Thomas, Samantha L; Lewis, Sophie; Blood, R Warwick; Holland, Kate; Komesaroff, Paul

    2016-01-01

    The media play a key role in promoting the thin ideal. A qualitative study, in which we used in depth interviews and thematic analysis, was undertaken to explore the attitudes of 142 obese individuals toward media portrayals of the thin ideal. Participants discussed the thin ideal as a social norm that is also supported through the exclusion of positive media portrayals of obese people. They perceived the thin ideal as an 'unhealthy' mode of social control, reflecting on their personal experiences and their concerns for others. Participants' perceptions highlighted the intersections between the thin ideal and gender, grooming and consumerism. Participants' personal responses to the thin ideal were nuanced--some were in support of the thin ideal and some were able to critically reflect and reject the thin ideal. We consider how the thin ideal may act as a form of synoptical social control, working in tandem with wider public health panoptical surveillance of body weight.

  3. Thin metal electrode for AMTEC

    NASA Technical Reports Server (NTRS)

    Williams, Roger M. (Inventor); Wheeler, Bob L. (Inventor); Jefferies-Nakamura, Barbara (Inventor); Lamb, James L. (Inventor); Bankston, C. Perry (Inventor); Cole, Terry (Inventor)

    1989-01-01

    An electrode having higher power output is formed of a thin, porous film (less than 1 micrometer) applied to a beta-alumina solid electrolyte (BASE). The electrode includes an open grid, current collector such as a series of thin, parallel, grid lines applied to the thin film and a plurality of cross-members such as loop of metal wire surrounding the BASE tube. The loops are electrically connected by a bus wire. The overall impedance of the electrode considering both the contributions from the bulk BASE and the porous electrode BASE interface is low, about 0.5 OHM/cm.sup.2 and power densities of over 0.3 watt/cm.sup.2 for extended periods.

  4. Squirming through shear thinning fluids

    NASA Astrophysics Data System (ADS)

    Datt, Charu; Zhu, Lailai; Elfring, Gwynn J.; Pak, On Shun

    2015-11-01

    Many microorganisms find themselves surrounded by fluids which are non-Newtonian in nature; human spermatozoa in female reproductive tract and motile bacteria in mucosa of animals are common examples. These biological fluids can display shear-thinning rheology whose effects on the locomotion of microorganisms remain largely unexplored. Here we study the self-propulsion of a squirmer in shear-thinning fluids described by the Carreau-Yasuda model. The squirmer undergoes surface distortions and utilizes apparent slip-velocities around its surface to swim through a fluid medium. In this talk, we will discuss how the nonlinear rheological properties of a shear-thinning fluid affect the propulsion of a swimmer compared with swimming in Newtonian fluids.

  5. Vapor deposition of thin films

    DOEpatents

    Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  6. Shear Thinning of Noncolloidal Suspensions

    NASA Astrophysics Data System (ADS)

    Vázquez-Quesada, Adolfo; Tanner, Roger I.; Ellero, Marco

    2016-09-01

    Shear thinning—a reduction in suspension viscosity with increasing shear rates—is understood to arise in colloidal systems from a decrease in the relative contribution of entropic forces. The shear-thinning phenomenon has also been often reported in experiments with noncolloidal systems at high volume fractions. However its origin is an open theoretical question and the behavior is difficult to reproduce in numerical simulations where shear thickening is typically observed instead. In this letter we propose a non-Newtonian model of interparticle lubrication forces to explain shear thinning in noncolloidal suspensions. We show that hidden shear-thinning effects of the suspending medium, which occur at shear rates orders of magnitude larger than the range investigated experimentally, lead to significant shear thinning of the overall suspension at much smaller shear rates. At high particle volume fractions the local shear rates experienced by the fluid situated in the narrow gaps between particles are much larger than the averaged shear rate of the whole suspension. This allows the suspending medium to probe its high-shear non-Newtonian regime and it means that the matrix fluid rheology must be considered over a wide range of shear rates.

  7. Stability of charged thin shells

    SciTech Connect

    Eiroa, Ernesto F.; Simeone, Claudio

    2011-05-15

    In this article we study the mechanical stability of spherically symmetric thin shells with charge, in Einstein-Maxwell and Einstein-Born-Infeld theories. We analyze linearized perturbations preserving the symmetry, for shells around vacuum and shells surrounding noncharged black holes.

  8. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, Dora K.; Arnold, Jr., Charles; Delnick, Frank M.

    1996-01-01

    Novel hybrid thin film electrolyte, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities .apprxeq.10.sup.-3 .OMEGA..sup.-1 cm.sup.-1 are useful as electrolytes for rechargeable lithium batteries.

  9. Hybrid thin-film amplifier

    NASA Technical Reports Server (NTRS)

    Cleveland, G.

    1977-01-01

    Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.

  10. Thin film polymeric gel electrolytes

    DOEpatents

    Derzon, D.K.; Arnold, C. Jr.; Delnick, F.M.

    1996-12-31

    Novel hybrid thin film electrolytes, based on an organonitrile solvent system, which are compositionally stable, environmentally safe, can be produced efficiently in large quantity and which, because of their high conductivities {approx_equal}10{sup {minus}3}{Omega}{sup {minus}1} cm{sup {minus}1} are useful as electrolytes for rechargeable lithium batteries. 1 fig.

  11. Thin Film Solid Lubricant Development

    NASA Technical Reports Server (NTRS)

    Benoy, Patricia A.

    1997-01-01

    Tribological coatings for high temperature sliding applications are addressed. A sputter-deposited bilayer coating of gold and chromium is investigated as a potential solid lubricant for protection of alumina substrates during sliding at high temperature. Evaluation of the tribological properties of alumina pins sliding against thin sputtered gold films on alumina substrates is presented.

  12. High Performance Thin Layer Chromatography.

    ERIC Educational Resources Information Center

    Costanzo, Samuel J.

    1984-01-01

    Clarifies where in the scheme of modern chromatography high performance thin layer chromatography (TLC) fits and why in some situations it is a viable alternative to gas and high performance liquid chromatography. New TLC plates, sample applications, plate development, and instrumental techniques are considered. (JN)

  13. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  14. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  15. On thinning of chains in MCMC

    USGS Publications Warehouse

    Link, William A.; Eaton, Mitchell J.

    2012-01-01

    4. We discuss the background and prevalence of thinning, illustrate its consequences, discuss circumstances when it might be regarded as a reasonable option and recommend against routine thinning of chains unless necessitated by computer memory limitations.

  16. Thin film-coated polymer webs

    DOEpatents

    Wenz, Robert P.; Weber, Michael F.; Arudi, Ravindra L.

    1992-02-04

    The present invention relates to thin film-coated polymer webs, and more particularly to thin film electronic devices supported upon a polymer web, wherein the polymer web is treated with a purifying amount of electron beam radiation.

  17. Low work function, stable thin films

    DOEpatents

    Dinh, Long N.; McLean, II, William; Balooch, Mehdi; Fehring, Jr., Edward J.; Schildbach, Marcus A.

    2000-01-01

    Generation of low work function, stable compound thin films by laser ablation. Compound thin films with low work function can be synthesized by simultaneously laser ablating silicon, for example, and thermal evaporating an alkali metal into an oxygen environment. For example, the compound thin film may be composed of Si/Cs/O. The work functions of the thin films can be varied by changing the silicon/alkali metal/oxygen ratio. Low work functions of the compound thin films deposited on silicon substrates were confirmed by ultraviolet photoelectron spectroscopy (UPS). The compound thin films are stable up to 500.degree. C. as measured by x-ray photoelectron spectroscopy (XPS). Tests have established that for certain chemical compositions and annealing temperatures of the compound thin films, negative electron affinity (NEA) was detected. The low work function, stable compound thin films can be utilized in solar cells, field emission flat panel displays, electron guns, and cold cathode electron guns.

  18. Thin films under chemical stress

    SciTech Connect

    Not Available

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  19. Morphology of Microscopic Thin Rubber Films

    NASA Astrophysics Data System (ADS)

    Zhang, Xin; Briber, Robert; Wang, Howard

    2014-03-01

    Microscopic thin rubber films have been prepared using photolithographic methods. Thin films of low molecular weight polybutadiene have been spun cast on positive photoresists, and transferred to various substrates upon UV exposure for crosslinking and defining the lateral dimension. The morphological scaling of thin rubber films as a function of film dimension and temperature is discussed.

  20. Cut Costs with Thin Client Computing.

    ERIC Educational Resources Information Center

    Hartley, Patrick H.

    2001-01-01

    Discusses how school districts can considerably increase the number of administrative computers in their districts without a corresponding increase in costs by using the "Thin Client" component of the Total Cost of Ownership (TCC) model. TCC and Thin Client are described, including its software and hardware components. An example of a Thin Client…

  1. A novel non-vacuum process for the preparation of CuIn(Se,S)2 thin-film solar cells from air-stable, eco-friendly, metal salts based solution ink

    NASA Astrophysics Data System (ADS)

    Luo, Paifeng; Liu, Zhaofan; Ding, Yuankui; Cheng, Jigui

    2015-01-01

    A facile solution-based non-vacuum process for deposition of CuIn(Se,S)2 (CISeS) absorber layers is presented in this work, which indicates a promising way for the low-cost applications in thin-film solar cells. Firstly, low-boiling-point solvents Monobutylamine C4H11N and Carbon disulfide CS2 are selected as the complexing and thickening agents and added into the Cu/In metal salts based solution. Thus the air-stable, eco-friendly solution ink is successfully synthesized through a simple solution synthesis route. The detailed chemical reaction mechanism and the influence of the composition of precursor solution have been discussed intensively as well. After sequential spin-coating, hot-treatment and selenization process, the high-quality CISeS films are obtained and then characterized by XRD, Raman, SEM, EDS, Metallographic microscope, Hall Effect measurement and UV-vis-NIR spectroscopy, respectively. It is found that the compact CISeS films with chalcopyrite α-phase possess a double-layer structure, and also incorporate with a little ordered vacancy compounds (OVCs) and Cu2-xSe impurities. The typical near stoichiometric CISeS films without Carbon residuals have superior photoelectric properties with carrier concentration of 3.46 × 1016 N cm-3 and band gap of 1.15 eV. Finally, the original first-made PV devices provide a power conversion efficiency (PCE) of 4.25%, which can be further improved by increasing the thickness of CISeS films and/or optimizing the selenization and sulfuration technologies.

  2. Flexible thin film magnetoimpedance sensors

    NASA Astrophysics Data System (ADS)

    Kurlyandskaya, G. V.; Fernández, E.; Svalov, A.; Burgoa Beitia, A.; García-Arribas, A.; Larrañaga, A.

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz.

  3. Multifrequency super-thin cloaks

    NASA Astrophysics Data System (ADS)

    Wang, Jiafu; Qu, Shaobo; Xu, Zhuo; Zhang, Anxue; Ma, Hua; Zhang, Jieqiu; Chen, Hongya; Feng, Mingde

    2014-04-01

    Bandwidth and thickness have become the most troublesome problems for EM cloaks. In this paper, we propose to solve the two problems using connected patches based on the microwave network model. By covering an obstacle with combined connected patches, cloaking effect can be achieved at multiple frequencies so as to expand the operating band. As an explicit example, a dual-band super-thin cloak using two different connected patch unit cells is demonstrated. Cloaking effect can be achieved at 3.50 GHz and 4.14 GHz simultaneously with an 8 dB transmission enhancement. The cloak design method provides a new route to broadening the bandwidth of thin EM cloaks.

  4. Thin film concentrator panel development

    NASA Technical Reports Server (NTRS)

    Zimmerman, D. K.

    1982-01-01

    The development and testing of a rigid panel concept that utilizes a thin film reflective surface for application to a low-cost point-focusing solar concentrator is discussed. It is shown that a thin film reflective surface is acceptable for use on solar concentrators, including 1500 F applications. Additionally, it is shown that a formed steel sheet substrate is a good choice for concentrator panels. The panel has good optical properties, acceptable forming tolerances, environmentally resistant substrate and stiffeners, and adaptability to low to mass production rates. Computer simulations of the concentrator optics were run using the selected reflector panel design. Experimentally determined values for reflector surface specularity and reflectivity along with dimensional data were used in the analysis. The simulations provided intercept factor and net energy into the aperture as a function of aperture size for different surface errors and pointing errors. Point source and Sun source optical tests were also performed.

  5. [Ultra-thin transnasal esophagogastroduodenoscopy].

    PubMed

    Kawai, Takashi; Yamamoto, Kei; Fukuzawa, Mari; Sakai, Yoshihiro; Moriyasu, Fuminori

    2010-07-01

    It is reported that ultra-thin transnasal esophagogastroduodenoscopy (TN-EGD) reduces pharyngeal discomfort and is more tolerable for the patients. Ultra-thin transnasal endoscopy has been reported as inferior to transoral conventional EGD (TO-EGD) in terms of image quality, suction, air insufflation and lens washing, due to the smaller endoscope caliber. TN-EGD should be conducted slowly, with short distance observation, and also with image-enhanced endoscopy. With reference to image-enhanced endoscopy, chromoendoscopy method (indigocarmine) is suitable for gastric neoplasm, on the other hand optical digital method (NBI) and digital method (i-scan, FICE) is suitable for esophageal neoplasm. TN-EGD is applied in various gastrointestinal (GI) procedures such as percutaneous endoscopic gastrostomy, nasoenteric feeding tube placement, endoscopic retrograde cholangiopancreaticography with nasobiliary drainage, long intestinal tube placement in small bowel obstruction, esophageal manometry. PMID:20662204

  6. Fundamentals of thin solar cells

    SciTech Connect

    Yablonovitch, E.

    1995-08-01

    It is now widely recognized that thin solar cells can present certain advantages for performance and cost. This is particularly the case when light trapping in the semiconductor film is incorporated, as compensation for the diminished single path thickness of the solar cell. In a solar cell thinner than a minority carrier diffusion length, the current collection is of course very easy. More importantly the concentration of an equivalent number of carriers in a thinner volume results in a higher Free Energy, or open circuit voltage. This extra Free Energy may be regarded as due to the concentration factor, just as it would be for photons, electrons, or for any chemical species. The final advantage of a thin solar cell is in the diminished material usage, a factor of considerable importance when we consider the material cost of the high quality semiconductors which we hope to employ.

  7. The Thin Oil Film Equation

    NASA Technical Reports Server (NTRS)

    Brown, James L.; Naughton, Jonathan W.

    1999-01-01

    A thin film of oil on a surface responds primarily to the wall shear stress generated on that surface by a three-dimensional flow. The oil film is also subject to wall pressure gradients, surface tension effects and gravity. The partial differential equation governing the oil film flow is shown to be related to Burgers' equation. Analytical and numerical methods for solving the thin oil film equation are presented. A direct numerical solver is developed where the wall shear stress variation on the surface is known and which solves for the oil film thickness spatial and time variation on the surface. An inverse numerical solver is also developed where the oil film thickness spatial variation over the surface at two discrete times is known and which solves for the wall shear stress variation over the test surface. A One-Time-Level inverse solver is also demonstrated. The inverse numerical solver provides a mathematically rigorous basis for an improved form of a wall shear stress instrument suitable for application to complex three-dimensional flows. To demonstrate the complexity of flows for which these oil film methods are now suitable, extensive examination is accomplished for these analytical and numerical methods as applied to a thin oil film in the vicinity of a three-dimensional saddle of separation.

  8. Scattering from Thin Dielectric Disks

    NASA Technical Reports Server (NTRS)

    Levine, D. M.; Schneider, A.; Lang, R. H.; Carter, H. G.

    1984-01-01

    A solution was obtained for scattering from thin dielectric disks by approximating the currents induced inside the disk with the currents which would exist inside a dielectric slab of the same thickness, orientation and dielectric properties. This approximation reduces to an electrostatic approximation when the disk thickness, T, is small compared to the wavelength of the incident radiation and the approximation yields a conventional physical optics solution when the dimension, A, characteristic of the geometrical cross section of the disk (e.g., the diameter of a circular disk) is large compared to wavelength. When the ratio A/T is sufficiently large the disk will always be in one or the other of these regimes (T lambda or kA1. Consequently, when A/T is large this solution provides a conventional approximation for the scattered fields which can be applied at all frequencies. As a check on this conclusion, a comparison was made between the theoretical and measured radar cross section of thin dielectric disks. Agreement was found for thin disks with both large and small values of kA.

  9. Thinning increases climatic resilience of red pine

    USGS Publications Warehouse

    Magruder, Matthew; Chhin, Sophan; Palik, Brian; Bradford, John B.

    2013-01-01

    Forest management techniques such as intermediate stand-tending practices (e.g., thinning) can promote climatic resiliency in forest stands by moderating tree competition. Residual trees gain increased access to environmental resources (i.e., soil moisture, light), which in turn has the potential to buffer trees from stressful climatic conditions. The influences of climate (temperature and precipitation) and forest management (thinning method and intensity) on the productivity of red pine (Pinus resinosa Ait.) in Michigan were examined to assess whether repeated thinning treatments were able to increase climatic resiliency (i.e., maintaining productivity and reduced sensitivity to climatic stress). The cumulative productivity of each thinning treatment was determined, and it was found that thinning from below to a residual basal area of 14 m2·ha−1 produced the largest average tree size but also the second lowest overall biomass per acre. On the other hand, the uncut control and the thinning from above to a residual basal area of 28 m2·ha−1 produced the smallest average tree size but also the greatest overall biomass per acre. Dendrochronological methods were used to quantify sensitivity of annual radial growth to monthly and seasonal climatic factors for each thinning treatment type. Climatic sensitivity was influenced by thinning method (i.e., thinning from below decreased sensitivity to climatic stress more than thinning from above) and by thinning intensity (i.e., more intense thinning led to a lower climatic sensitivity). Overall, thinning from below to a residual basal area of 21 m2·ha−1 represented a potentially beneficial compromise to maximize tree size, biomass per acre, and reduced sensitivity to climatic stress, and, thus, the highest level of climatic resilience.

  10. Computational modeling of thin ceramic tiles backed by thin substrates

    SciTech Connect

    Walker, J.D.; Anderson, C.E. Jr.; Cox, P.A.

    1995-12-31

    Building on the work of Wilkins, Eulerian hydrocode calculations were performed with ceramic models to examine the behavior of thin ceramic tiles backed by a thin substrate. In order to match ballistic limit data it was necessary to include a pressure dependent flow stress for failed ceramic. Reasonable agreement is found between the modified model and ballistic limit data for a simulated armor piercing round impacting an AD-85 alumina/6061T6 aluminum laminate. Based upon this success, the modified model was used to examine the performance of a SiC/6061T6 aluminum laminate when impacted by an M80 ball round (7.62 mm) at muzzle velocity. The projectile undergoes large deformation, as does the aluminum backing sheet. The computational results indicate, for the M80 projectile impacting at muzzle velocity, that the ballistic limit thickness for the SiC/aluminum laminate should weigh 10% less than the ballistic limit thickness for steel. The talk will include a video tape of calculations.

  11. New thin materials for electronics.

    SciTech Connect

    Schwartzberg, Adam

    2012-02-01

    The work described in this report is from an Early Career LDRD to develop and investigate novel thin film organic conductors with drastically improved electronic properties over the current state of the art. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory a Langmuir-Blodgett trough (LB) was built from scavenged parts and added to a scanning Raman microscope at LBNL. First order thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have helped position Sandia for advances in this area of MOF film creation. In collaboration with the Molecular Foundry at Lawrence Berkeley National Laboratory, a Langmuir-Blodgett trough (LB) was built and added to a scanning Raman microscope at LBNL. Thin peptoid film samples were fabricated for testing Raman and photoluminescence imagining techniques. Tests showed that a single peptoid sheet can be successfully imaged using confocal Raman spectroscopy, and a peptoid sheet can be successfully imaged using near-field photoluminescence at a resolution less than 70 nm. These results have positioned Sandia for advance in this area of MOF film creation. The interactions with LBNL also led to award of two user projects at the Molecular Foundry at LBNL led by current Sandia staff and the appointment of a current Sandia staff to the Molecular Foundry User Executive Committee.

  12. Thin film buried anode battery

    DOEpatents

    Lee, Se-Hee; Tracy, C. Edwin; Liu, Ping

    2009-12-15

    A reverse configuration, lithium thin film battery (300) having a buried lithium anode layer (305) and process for making the same. The present invention is formed from a precursor composite structure (200) made by depositing electrolyte layer (204) onto substrate (201), followed by sequential depositions of cathode layer (203) and current collector (202) on the electrolyte layer. The precursor is subjected to an activation step, wherein a buried lithium anode layer (305) is formed via electroplating a lithium anode layer at the interface of substrate (201) and electrolyte film (204). The electroplating is accomplished by applying a current between anode current collector (201) and cathode current collector (202).

  13. Thin film solar energy collector

    DOEpatents

    Aykan, Kamran; Farrauto, Robert J.; Jefferson, Clinton F.; Lanam, Richard D.

    1983-11-22

    A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

  14. Advanced Thin Ionization Calorimeter (ATIC)

    NASA Technical Reports Server (NTRS)

    Wefel, John P.

    1998-01-01

    This is the final report for NASA grant NAGW-4577, "Advanced Thin Ionization Calorimeter (ATIC)". This grant covered a joint project between LSU and the University of Maryland for a Concept Study of a new type of fully active calorimeter to be used to measure the energy spectra of very high energy cosmic rays, particularly Hydrogen and Helium, to beyond 1014 eV. This very high energy region has been studied with emulsion chamber techniques, but never investigated with electronic calorimeters. Technology had advanced to the point that a fully active calorimeter based upon Bismuth Germanate (BGO) scintillating crystals appeared feasible for balloon flight (and eventually space) experiments.

  15. Improved Thin, Flexible Heat Pipes

    NASA Technical Reports Server (NTRS)

    Rosenfeld, John H.; Gernert, Nelson J.; Sarraf, David B.; Wollen, Peter J.; Surina, Frank C.; Fale, John E.

    2004-01-01

    Flexible heat pipes of an improved type are fabricated as layers of different materials laminated together into vacuum- tight sheets or tapes. In comparison with prior flexible heat pipes, these flexible heat pipes are less susceptible to leakage. Other advantages of these flexible heat pipes, relative to prior flexible heat pipes, include high reliability and greater ease and lower cost of fabrication. Because these heat pipes are very thin, they are highly flexible. When coated on outside surfaces with adhesives, these flexible heat pipes can be applied, like common adhesive tapes, to the surfaces of heat sinks and objects to be cooled, even if those surfaces are curved.

  16. Generic thin-shell gravastars

    SciTech Connect

    Martin-Moruno, Prado; Visser, Matt; Garcia, Nadiezhda Montelongo; Lobo, Francisco S.N. E-mail: nmontelongo@fis.cinvestav.mx E-mail: matt.visser@msor.vuw.ac.nz

    2012-03-01

    We construct generic spherically symmetric thin-shell gravastars by using the cut-and-paste procedure. We take considerable effort to make the analysis as general and unified as practicable; investigating both the internal physics of the transition layer and its interaction with 'external forces' arising due to interactions between the transition layer and the bulk spacetime. Furthermore, we discuss both the dynamic and static situations. In particular, we consider 'bounded excursion' dynamical configurations, and probe the stability of static configurations. For gravastars there is always a particularly compelling configuration in which the surface energy density is zero, while surface tension is nonzero.

  17. Method of producing amorphous thin films

    DOEpatents

    Brusasco, Raymond M.

    1992-01-01

    Disclosed is a method of producing thin films by sintering which comprises: a. coating a substrate with a thin film of an inorganic glass forming parulate material possessing the capability of being sintered, and b. irridiating said thin film of said particulate material with a laser beam of sufficient power to cause sintering of said material below the temperature of liquidus thereof. Also disclosed is the article produced by the method claimed.

  18. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    MSFC is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit hard thin film an stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  19. Analysis of Hard Thin Film Coating

    NASA Technical Reports Server (NTRS)

    Shen, Dashen

    1998-01-01

    Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

  20. Beryllium thin films for resistor applications

    NASA Technical Reports Server (NTRS)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  1. Thin film solar cell module

    SciTech Connect

    Gay, R.R.

    1987-01-20

    A thin film solar cell module is described comprising a first solar cell panel containing an array of solar cells consisting of a TFS semiconductor sandwiched between a transparent conductive zinc oxide layer and a transparent conductive layer selected from the group consisting of tin oxide, indium tin oxide, and zinc oxide deposited upon a transparent superstrate, and a second solar cell panel containing an array of solar cells consisting of a CIS semiconductor layer sandwiched between a zinc oxide semiconductor layer and a conductive metal layer deposited upon an insulating substrate. The zinc oxide semiconductor layer contains a first relatively thin layer of high resistivity zinc oxide adjacent the CIS semiconductor and a second relatively thick layer of low resistivity zinc oxide overlying the high resistivity zinc oxide layer. The transparent conductive zinc oxide layer of the first panel faces the low resistivity zinc oxide layer of the second panel, the first and second panels being positioned optically in series and separated by a transparent insulating layer.

  2. Plasmonics in atomically thin materials.

    PubMed

    García de Abajo, F Javier; Manjavacas, Alejandro

    2015-01-01

    The observation and electrical manipulation of infrared surface plasmons in graphene have triggered a search for similar photonic capabilities in other atomically thin materials that enable electrical modulation of light at visible and near-infrared frequencies, as well as strong interaction with optical quantum emitters. Here, we present a simple analytical description of the optical response of such kinds of structures, which we exploit to investigate their application to light modulation and quantum optics. Specifically, we show that plasmons in one-atom-thick noble-metal layers can be used both to produce complete tunable optical absorption and to reach the strong-coupling regime in the interaction with neighboring quantum emitters. Our methods are applicable to any plasmon-supporting thin materials, and in particular, we provide parameters that allow us to readily calculate the response of silver, gold, and graphene islands. Besides their interest for nanoscale electro-optics, the present study emphasizes the great potential of these structures for the design of quantum nanophotonics devices.

  3. Thin-Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.

    1993-01-01

    Direct conversion of thermal energy into electrical energy using a photovoltaic cell is called thermophotovoltaic energy conversion. One way to make this an efficient process is to have the thermal energy source be an efficient selective emitter of radiation. The emission must be near the band-gap energy of the photovoltaic cell. One possible method to achieve an efficient selective emitter is the use of a thin film of rare-earth oxides. The determination of the efficiency of such an emitter requires analysis of the spectral emittance of the thin film including scattering and reflectance at the vacuum-film and film-substrate interfaces. Emitter efficiencies (power emitted in emission band/total emitted power) in the range 0.35-0.7 are predicted. There is an optimum optical depth to obtain maximum efficiency. High emitter efficiencies are attained only for low (less than 0.05) substrate emittance values, both with and without scattering. The low substrate emittance required for high efficiency limits the choice of substrate materials to highly reflective metals or high-transmission materials such as sapphire.

  4. Thin disk lasers: history and prospects

    NASA Astrophysics Data System (ADS)

    Speiser, Jochen

    2016-04-01

    During the early 1990s, collaboration between the German Aerospace Center and the University of Stuttgart started to work on the Thin Disk concept. The core idea behind the thin disk design is the use of a thin, disk-shaped active medium that is cooled through one of the flat faces of the disk. This ensures a large surface-to-volume ratio and therefore provides very efficient thermal management. Today, the thin disk concept is used in various commercial lasers - ranging from compact, efficient low power systems to multi-kW lasers, including cw lasers and also pulsed (femtosecond to nanosecond) oscillators and amplifiers. The whole development of the Thin Disk laser was and will be accompanied by numerical modeling and optimization of the thermal and thermo-mechanic behavior of the disk and also the heat sink structure, mostly based on finite element models. For further increasing the energy and efficiency of pulsed Thin Disk lasers, the effects of amplified spontaneous emission (ASE) are a core issue. Actual efforts are oriented towards short pulse and ultra-short pulse amplifiers with (multi-)kW average power or Joule-class Thin Disk amplifiers, but also on new designs for cw thin disk MOPA designs.

  5. Thin CVD Coating Protects Titanium Aluminide Alloys

    NASA Technical Reports Server (NTRS)

    Clark, Ronald; Wallace, Terryl; Cunnington, George; Robinson, John

    1994-01-01

    Feasibility of using very thin CVD coatings to provide both protection against oxidation and surfaces of low catalytic activity for thin metallic heat-shield materials demonstrated. Use of aluminum in compositions increases emittances of coatings and reduces transport of oxygen through coatings to substrates. Coatings light in weight and applied to foil-gauge materials with minimum weight penalties.

  6. Thin Silicon MEMS Contact-Stress Sensor

    SciTech Connect

    Kotovksy, J; Tooker, A; Horsley, D

    2010-05-28

    This thin, MEMS contact-stress sensor continuously and accurately measures time-varying, solid interface loads over tens of thousands of load cycles. The contact-stress sensor is extremely thin (150 {mu}m) and has a linear output with an accuracy of {+-} 1.5% FSO.

  7. Thin-Film Nanocapacitor and Its Characterization

    ERIC Educational Resources Information Center

    Hunter, David N.; Pickering, Shawn L.; Jia, Dongdong

    2007-01-01

    An undergraduate thin-film nanotechnology laboratory was designed. Nanocapacitors were fabricated on silicon substrates by sputter deposition. A mask was designed to form the shape of the capacitor and its electrodes. Thin metal layers of Au with a 80 nm thickness were deposited and used as two infinitely large parallel plates for a capacitor.…

  8. Thin films of mixed metal compounds

    DOEpatents

    Mickelsen, Reid A.; Chen, Wen S.

    1985-01-01

    A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

  9. Thin film bioreactors in space.

    PubMed

    Hughes-Fulford, M; Scheld, H W

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  10. Collapsing thin shells with rotation

    NASA Astrophysics Data System (ADS)

    Delsate, Térence; Rocha, Jorge V.; Santarelli, Raphael

    2014-06-01

    We construct exact solutions describing the motion of rotating thin shells in a fully backreacted five-dimensional rotating black hole spacetime. The radial equation of motion follows from the Darmois-Israel junction conditions, where both interior and exterior geometries are taken to be equal angular momenta Myers-Perry solutions. We show that rotation generates anisotropic pressures and momentum along the shell. Gravitational collapse scenarios including rotation are analyzed and a new class of stationary solutions is introduced. Energy conditions for the anisotropic matter shell are briefly discussed. We find that the weak energy condition is not violated for the collapse scenario where the shell starts at rest from infinity, nor for the new class of stationary solutions in anti-de Sitter. We further prove that the cosmic censorship conjecture is always satisfied in our setup.

  11. Tunneling in thin MOS structures

    NASA Technical Reports Server (NTRS)

    Maserjian, J.

    1974-01-01

    Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

  12. Thin film bioreactors in space

    NASA Technical Reports Server (NTRS)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  13. BDS thin film damage competition

    SciTech Connect

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  14. Wrinkle motifs in thin films

    PubMed Central

    Budrikis, Zoe; Sellerio, Alessandro L.; Bertalan, Zsolt; Zapperi, Stefano

    2015-01-01

    On length scales from nanometres to metres, partial adhesion of thin films with substrates generates a fascinating variety of patterns, such as ‘telephone cord’ buckles, wrinkles, and labyrinth domains. Although these patterns are part of everyday experience and are important in industry, they are not completely understood. Here, we report simulation studies of a previously-overlooked phenomenon in which pairs of wrinkles form avoiding pairs, focusing on the case of graphene over patterned substrates. By nucleating and growing wrinkles in a controlled way, we characterize how their morphology is determined by stress fields in the sheet and friction with the substrate. Our simulations uncover the generic behaviour of avoiding wrinkle pairs that should be valid at all scales. PMID:25758174

  15. Wrinkle motifs in thin films

    NASA Astrophysics Data System (ADS)

    Budrikis, Zoe; Sellerio, Alessandro L.; Bertalan, Zsolt; Zapperi, Stefano

    2015-03-01

    On length scales from nanometres to metres, partial adhesion of thin films with substrates generates a fascinating variety of patterns, such as `telephone cord' buckles, wrinkles, and labyrinth domains. Although these patterns are part of everyday experience and are important in industry, they are not completely understood. Here, we report simulation studies of a previously-overlooked phenomenon in which pairs of wrinkles form avoiding pairs, focusing on the case of graphene over patterned substrates. By nucleating and growing wrinkles in a controlled way, we characterize how their morphology is determined by stress fields in the sheet and friction with the substrate. Our simulations uncover the generic behaviour of avoiding wrinkle pairs that should be valid at all scales.

  16. Longwall mining of thin seams

    SciTech Connect

    Curth, E A

    1981-01-01

    Thin seam operations pose a challenge to the ingenuity of mining engineers to overcome the factor of human inconvenience in the restricted environment and associated high cost production. Surprisingly, low seam longwalls in the Federal Republic of Germany in an average thickness of 35 in. and dipping less than 18/sup 0/ come close to achieving the average production rate of all German longwall operations. They are all plow faces, and a consistent production of 3300 tons per day and a productivity of 40 tons per man shift are reported from one of the thin seam longwalls. These results were attained by reliable high-capacity equipment and roof support by shields that can be collapsed to as low as 22 inches. Maximum mining height for plow operated faces lies at 31.5 inches. Technology for mechanized mining of flat lying coalbeds less than 31.5 inches in thickness without rock cutting is not available, and firmness of coal, undulation of the strata, coalbed thickness variation, and the necessity of cutting rock, particularly through faults, set limits to plow application. The in-web shearer can be used in firm coal to a minimum mining height of 40 inches, and a daily production of 1650 to 2200 tons is reported from a longwall in the Saar district of Germany equipped with such a shearer and shields. Numerous in-web shearers are employed in the United Kingdom; reports as to their success are contradictory. Also, experience in the United States, though limited, has been negative. The steady increase in output from single drum shearer faces in Pennsylvania is a remarkable achievement, and occasional record breaking peaks in production indicate the potential of such mining. Technology development for the future is discussed.

  17. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K.; Wei, G.; Yu, P.C.

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  18. A monolithic thin film electrochromic window

    SciTech Connect

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. . Electro-Optics Technology Center); Wei, G. ); Yu, P.C. )

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  19. Magnetostrictive thin films for microwave spintronics

    PubMed Central

    Parkes, D. E.; Shelford, L. R.; Wadley, P.; Holý, V.; Wang, M.; Hindmarch, A. T.; van der Laan, G.; Campion, R. P.; Edmonds, K. W.; Cavill, S. A.; Rushforth, A. W.

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. PMID:23860685

  20. Magnetostrictive thin films for microwave spintronics.

    PubMed

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  1. Zinc oxide thin film acoustic sensor

    SciTech Connect

    Mohammed, Ali Jasim; Salih, Wafaa Mahdi; Hassan, Marwa Abdul Muhsien; Nusseif, Asmaa Deiaa; Kadhum, Haider Abdullah; Mansour, Hazim Louis

    2013-12-16

    This paper reports the implementation of (750 nm) thickness of Zinc Oxide (ZnO) thin film for the piezoelectric pressure sensors. The film was prepared and deposited employing the spray pyrolysis technique. XRD results show that the growth preferred orientation is the (002) plane. A polycrystalline thin film (close to mono crystallite like) was obtained. Depending on the Scanning Electron Microscopy photogram, the film homogeneity and thickness were shown. The resonance frequency measured (about 19 kHz) and the damping coefficient was calculated and its value was found to be about (2.5538), the thin film be haves as homogeneous for under and over damped. The thin film pressure sensing was approximately exponentially related with frequency, the thin film was observed to has a good response for mechanical stresses also it is a good material for the piezoelectric properties.

  2. Mutation-Specific Effects on Thin Filament Length in Thin Filament Myopathy

    PubMed Central

    de Winter, Josine M.; Joureau, Barbara; Lee, Eun-Jeong; Kiss, Balázs; Yuen, Michaela; Gupta, Vandana A.; Pappas, Christopher T.; Gregorio, Carol C.; Stienen, Ger J. M.; Edvardson, Simon; Wallgren-Pettersson, Carina; Lehtokari, Vilma-Lotta; Pelin, Katarina; Malfatti, Edoardo; Romero, Norma B.; van Engelen, Baziel G.; Voermans, Nicol C.; Donkervoort, Sandra; Bönnemann, C. G.; Clarke, Nigel F.; Beggs, Alan H.; Granzier, Henk; Ottenheijm, Coen A. C.

    2016-01-01

    Objective Thin filament myopathies are among the most common nondystrophic congenital muscular disorders, and are caused by mutations in genes encoding proteins that are associated with the skeletal muscle thin filament. Mechanisms underlying muscle weakness are poorly understood, but might involve the length of the thin filament, an important determinant of force generation. Methods We investigated the sarcomere length-dependence of force, a functional assay that provides insights into the contractile strength of muscle fibers as well as the length of the thin filaments, in muscle fibers from 51 patients with thin filament myopathy caused by mutations in NEB, ACTA1, TPM2, TPM3, TNNT1, KBTBD13, KLHL40, and KLHL41. Results Lower force generation was observed in muscle fibers from patients of all genotypes. In a subset of patients who harbor mutations in NEB and ACTA1, the lower force was associated with downward shifted force–sarcomere length relations, indicative of shorter thin filaments. Confocal microscopy confirmed shorter thin filaments in muscle fibers of these patients. A conditional Neb knockout mouse model, which recapitulates thin filament myopathy, revealed a compensatory mechanism; the lower force generation that was associated with shorter thin filaments was compensated for by increasing the number of sarcomeres in series. This allowed muscle fibers to operate at a shorter sarcomere length and maintain optimal thin–thick filament overlap. Interpretation These findings might provide a novel direction for the development of therapeutic strategies for thin filament myopathy patients with shortened thin filament lengths. PMID:27074222

  3. Optimization of CdS Buffer Layer for High Efficiency CIGS Solar Cells.

    PubMed

    Kim, Donguk; Jang, Yong-Jun; Jung, Ho-Sung; Kim, Minha; Baek, Dohyun; Yi, Junsin; Lee, Jaehyeong; Choi, Youngkwan

    2016-05-01

    In present work, effects of the thickness on the structural and optical properties of chemically deposited CdS thin films were investigated. In addition, we fabricated Cu(In, Ga)Se2 solar cells with various thicknesses of CdS buffer layer and optimized the thickness for a high efficiency. When the CdS thin films were thicker, the crystallinity improved but the transmittance decreased. The short-circuit current density (J(sc)) and the fill factor are the major efficiency limiting factors for the CIGS solar cells. As the thickness of the CdS buffer layer, the open-circuit voltage (V(oc)) and the fill factor increased, whereas the J(sc) slightly decreased. The improvement of the fill factor and thus efficiency resulted from larger shunt resistance. For the solar cells without a high resistive intrinsic ZnO layer, the highest efficiency was acquired at the thickness of 89 nm. With further increasing the thickness, the J(sc) decreased significantly, resulting in poor efficiency. PMID:27483874

  4. Instrument platforms for thin-layer chromatography.

    PubMed

    Bernard-Savary, Pierre; Poole, Colin F

    2015-11-20

    High performance column and thin-layer chromatography are both instrumental techniques but differ in that column chromatography requires a fully integrated instrument platform with high pressure capability while for thin-layer chromatography separate devices are used for each unit operation, usually at or close to atmospheric pressure, and afford higher flexibility supporting on-line or off-line operation. The unit operations of thin-layer chromatography are defined as sample application, development and evaluation with derivatization as an optional step. The diversity of equipment for each operation contributes to the flexibility of analysis by thin-layer chromatography and supports manual, semi-automated or full-automation of the separation process. Instrument platforms are more than a convenience as they affect performance, repeatability, sample detectability, and time management. The current trend in thin-layer chromatography is to make the unit operations independent of the user so that analysts can perform other tasks while each step is performed. In addition, in thin-layer chromatography it is general practice to separate several samples simultaneously, and instrument platforms are required to accommodate this feature. In this article, we review contemporary instrumentation employed in thin-layer chromatography for sample application, development, derivatization, photodocumentation, densitometric evaluation, and hyphenation with spectroscopic detectors with an emphasis on the variety and performance of commercially available systems. Some suggestions for best practices and avoidance of common mistakes are included.

  5. Fillability of Thin-Wall Steel Castings

    SciTech Connect

    Robert C. Voigt; Joseph Bertoletti; Andrew Kaley; Sandi Ricotta; Travis Sunday

    2002-07-30

    The use of steel components is being challenged by lighter nonferrous or cast iron components. The development of techniques for enhancing and ensuring the filability of thin-wall mold cavities is most critical for thinner wall cast steel production. The purpose of this research was to develop thin-wall casting techniques that can be used to reliably produce thin-wall castings from traditional gravity poured sand casting processes. The focus of the research was to enhance the filling behavior to prevent misrunds. Experiments were conducted to investigate the influence of various foundry variables on the filling of thin section steel castings. These variables include casting design, heat transfer, gating design, and metal fluidity. Wall thickness and pouring temperature have the greatest effect on casting fill. As wall thickness increases the volume to surface area of the casting increases, which increases the solidification time, allowing the metal to flow further in thicker sect ions. Pouring time is another significant variable affecting casting fill. Increases or decreases of 20% in the pouring time were found to have a significant effect on the filling of thin-wall production castings. Gating variables, including venting, pouring head height, and mold tilting also significantly affected thin-wall casting fill. Filters offer less turbulent, steadier flow, which is appropriate for thicker castings, but they do not enhance thin-wall casting fill.

  6. Macro stress mapping on thin film buckling

    SciTech Connect

    Goudeau, P.; Villain, P.; Renault, P.-O.; Tamura, N.; Celestre, R.S.; Padmore, H.A.

    2002-11-06

    Thin films deposited by Physical Vapour Deposition techniques on substrates generally exhibit large residual stresses which may be responsible of thin film buckling in the case of compressive stresses. Since the 80's, a lot of theoretical work has been done to develop mechanical models but only a few experimental work has been done on this subject to support these theoretical approaches and nothing concerning local stress measurement mainly because of the small dimension of the buckling (few 10th mm). This paper deals with the application of micro beam X-ray diffraction available on synchrotron radiation sources for stress mapping analysis of gold thin film buckling.

  7. Structural characterization of thin film photonic crystals

    SciTech Connect

    Subramania, G.; Biswas, R.; Constant, K.; Sigalas, M. M.; Ho, K. M.

    2001-06-15

    We quantitatively analyze the structure of thin film inverse-opal photonic crystals composed of ordered arrays of air pores in a background of titania. Ordering of the sphere template and introduction of the titania background were performed simultaneously in the thin film photonic crystals. Nondestructive optical measurements of backfilling with high refractive index liquids, angle-resolved reflectivity, and optical spectroscopy were combined with band-structure calculations. The analysis reveals a thin film photonic crystal structure with a very high filling fraction (92{endash}94%) of air and a substantial compression along the c axis ({similar_to}22{endash}25%).

  8. Surface roughness evolution of nanocomposite thin films

    SciTech Connect

    Turkin, A. A.; Pei, Y. T.; Shaha, K. P.; Chen, C. Q.; Vainshtein, D. I.; Hosson, J. Th. M. de

    2009-01-01

    An analysis of dynamic roughening and smoothening mechanisms of thin films grown with pulsed-dc magnetron sputtering is presented. The roughness evolution has been described by a linear stochastic equation, which contains the second- and fourth-order gradient terms. Dynamic smoothening of the growing interface is explained by ballistic effects resulting from impingements of ions to the growing thin film. These ballistic effects are sensitive to the flux and energy of impinging ions. The predictions of the model are compared with experimental data, and it is concluded that the thin film roughness can be further controlled by adjusting waveform, frequency, and width of dc pulses.

  9. Progressive bilateral thinning of the parietal bones

    SciTech Connect

    Cederlund, C.G.; Andren, L.; Olivecrona, H.

    1982-03-01

    Observation of a case of progressive bilateral parietal thinning within a period of 14 years induced us to study skull films of 3 636 consecutive patients. Parietal thinning was found in 86 patients (2.37%). It was more common in women, with a sex ratio of 1:1.9. The mean age of the females was 72 years, and that of the males 63 years. Previous skull films of 25 of these patients were available and showed progression in 10. It is concluded that parietal thinning is a slowly progressive disease of middle-aged and old patients and is not an anatomical variant or congenital dysplasia of the dipole.

  10. Thin wetting film lensless imaging

    NASA Astrophysics Data System (ADS)

    Allier, C. P.; Poher, V.; Coutard, J. G.; Hiernard, G.; Dinten, J. M.

    2011-03-01

    Lensless imaging has recently attracted a lot of attention as a compact, easy-to-use method to image or detect biological objects like cells, but failed at detecting micron size objects like bacteria that often do not scatter enough light. In order to detect single bacterium, we have developed a method based on a thin wetting film that produces a micro-lens effect. Compared with previously reported results, a large improvement in signal to noise ratio is obtained due to the presence of a micro-lens on top of each bacterium. In these conditions, standard CMOS sensors are able to detect single bacterium, e.g. E.coli, Bacillus subtilis and Bacillus thuringiensis, with a large signal to noise ratio. This paper presents our sensor optimization to enhance the SNR; improve the detection of sub-micron objects; and increase the imaging FOV, from 4.3 mm2 to 12 mm2 to 24 mm2, which allows the detection of bacteria contained in 0.5μl to 4μl to 10μl, respectively.

  11. Reconnection in thin current sheets

    NASA Astrophysics Data System (ADS)

    Tenerani, Anna; Velli, Marco; Pucci, Fulvia; Rappazzo, A. F.

    2016-05-01

    It has been widely believed that reconnection is the underlying mechanism of many explosive processes observed both in nature and laboratory, but the question of reconnection speed and initial trigger have remained mysterious. How is fast magnetic energy release triggered in high Lundquist (S) and Reynolds (R) number plasmas?It has been shown that a tearing mode instability can grow on an ideal timescale, i.e., independent from the the Lundquist number, once the current sheet thickness becomes thin enough, or rather the inverse aspect ratio a/L reaches a scale a/L~S-1/3. As such, the latter provides a natural, critical threshold for current sheets that can be formed in nature before they disrupt in a few Alfvén time units. Here we discuss the transition to fast reconnection extended to simple viscous and kinetic models and we propose a possible scenario for the transition to explosive reconnection in high-Lundquist number plasmas, that we support with fully nonlinear numerical MHD simulations of a collapsing current sheet.

  12. Ultra-thin multilayer capacitors.

    SciTech Connect

    Renk, Timothy Jerome; Monson, Todd C.

    2009-06-01

    The fabrication of ultra-thin lanthanum-doped lead zirconium titanate (PLZT) multilayer ceramic capacitors (MLCCs) using a high-power pulsed ion beam was studied. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The goal of this work was to increase the energy density of ceramic capacitors through the formation of a multilayer device with excellent materials properties, dielectric constant, and standoff voltage. For successful device construction, there are a number of challenging requirements including achieving correct stoichiometric and crystallographic composition of the deposited PLZT, as well as the creation of a defect free homogenous film. This report details some success in satisfying these requirements, although 900 C temperatures were necessary for PLZT perovskite phase formation. These temperatures were applied to a previously deposited multi-layer film which was then post-annealed to this temperature. The film exhibited mechanical distress attributable to differences in the coefficient of thermal expansion (CTE) of the various layers. This caused significant defects in the deposited films that led to shorts across devices. A follow-on single layer deposition without post-anneal produced smooth layers with good interface behavior, but without the perovskite phase formation. These issues will need to be addressed in order for ion beam deposited MLCCs to become a viable technology. It is possible that future in-situ heating during deposition may address both the CTE issue, and result in lowered processing temperatures, which in turn could raise the probability of successful MLCC formation.

  13. VUV thin films, chapter 7

    NASA Technical Reports Server (NTRS)

    Zukic, Muamer; Torr, Douglas G.

    1993-01-01

    The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.

  14. De Sitter thin brane model

    NASA Astrophysics Data System (ADS)

    Nishi, Masato

    2016-07-01

    We discuss the large mass hierarchy problem in a braneworld model which represents our acceleratively expanding universe. The Randall-Sundrum (RS) model with one extra warped dimension added to a flat four-dimensional space-time cannot describe our expanding universe. Here, we study instead the de Sitter thin brane model. This is described by the same action as that for the RS model, but the four-dimensional space-time on the branes is dS_4. We study the model for both the cases of positive five-dimensional cosmological constant Λ_5 and a negative one. In the positive Λ_5 case, the four-dimensional large hierarchy necessitates a five-dimensional large hierarchy, and we cannot get a natural explanation. On the other hand, in the negative Λ_5 case, the large hierarchy is naturally realized in the five-dimensional theory in the same manner as in the RS model. Moreover, another large hierarchy between the Hubble parameter and the Planck scale is realized by the O(10^2) hierarchy of the five-dimensional quantities. Finally, we find that the lightest mass of the massive Kaluza-Klein modes and the intervals of the mass spectrum are of order 10^2 GeV, which are the same as in the RS case and do not depend on the value of the Hubble parameter.

  15. Motivations for dieting: Drive for Thinness is different from Drive for Objective Thinness.

    PubMed

    Chernyak, Yelena; Lowe, Michael R

    2010-05-01

    Drive for thinness is a cardinal feature of bulimia nervosa. However, the widely used Drive for Thinness (DFT) subscale of the Eating Disorder Inventory (Garner, 2004; Garner, Olmstead, & Polivy, 1983) appears to measure a desire to be thinner, not a desire to be objectively thin. We developed the Drive for Objective Thinness (DFOT) Scale and compared unrestrained and restrained eaters and those with bulimia nervosa on the DFT subscale, Goldfarb's Fear of Fat Scale (GFFS; Goldfarb, Dykens, & Gerrard, 1983), and the DFOT Scale. Restrained eaters had higher scores than unrestrained eaters on the DFT subscale and the GFFS, but both groups had low scores on the DFOT Scale. Only the group with bulimia nervosa showed elevated scores on the DFOT Scale. We conclude that restrained eaters diet mostly to avoid weight gain, that individuals with bulimia nervosa diet to achieve thinness and avoid fatness, and that the drive for objective thinness is a unique feature of bulimia nervosa.

  16. Method for making thin carbon foam electrodes

    DOEpatents

    Pekala, Richard W.; Mayer, Steven T.; Kaschmitter, James L.; Morrison, Robert L.

    1999-01-01

    A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.

  17. Method for making thin carbon foam electrodes

    DOEpatents

    Pekala, R.W.; Mayer, S.T.; Kaschmitter, J.L.; Morrison, R.L.

    1999-08-03

    A method for fabricating thin, flat carbon electrodes by infiltrating highly porous carbon papers, membranes, felts, metal fibers/powders, or fabrics with an appropriate carbon foam precursor material is disclosed. The infiltrated carbon paper, for example, is then cured to form a gel-saturated carbon paper, which is subsequently dried and pyrolyzed to form a thin sheet of porous carbon. The material readily stays flat and flexible during curing and pyrolyzing to form thin sheets. Precursor materials include polyacrylonitrile (PAN), polymethylacrylonitrile (PMAN), resorcinol/formaldehyde, catechol/formaldehyde, phenol/formaldehyde, etc., or mixtures thereof. These thin films are ideal for use as high power and energy electrodes in batteries, capacitors, and fuel cells, and are potentially useful for capacitive deionization, filtration and catalysis.

  18. Thin films for geothermal sensing: Final report

    SciTech Connect

    Not Available

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  19. Spherical aberration in electrically thin flat lenses.

    PubMed

    Ruphuy, Miguel; Ramahi, Omar M

    2016-08-01

    We analyze the spherical aberration of a new generation of lenses made of flat electrically thin inhomogeneous media. For such lenses, spherical aberration is analyzed quantitatively and qualitatively, and comparison is made to the classical gradient index rod. Both flat thin and thick lenses are made of gradient index materials, but the physical mechanisms and design equations are different. Using full-wave three-dimensional numerical simulation, we evaluate the spherical aberrations using the Maréchal criterion and show that the thin lens gives significantly better performance than the thick lens (rod). Additionally, based on ray tracing formulation, third-order analysis for longitudinal aberration and optical path difference are presented, showing strong overall performance of thin lenses in comparison to classical rod lenses. PMID:27505651

  20. Thermally tunable ferroelectric thin film photonic crystals.

    SciTech Connect

    Lin, P. T.; Wessels, B. W.; Imre, A.; Ocola, L. E.; Northwestern Univ.

    2008-01-01

    Thermally tunable PhCs are fabricated from ferroelectric thin films. Photonic band structure and temperature dependent diffraction are calculated by FDTD. 50% intensity modulation is demonstrated experimentally. This device has potential in active ultra-compact optical circuits.

  1. Thin film production method and apparatus

    DOEpatents

    Loutfy, Raouf O.; Moravsky, Alexander P.; Hassen, Charles N.

    2010-08-10

    A method for forming a thin film material which comprises depositing solid particles from a flowing suspension or aerosol onto a filter and next adhering the solid particles to a second substrate using an adhesive.

  2. Thin Wall Cast Iron: Phase II

    SciTech Connect

    Doru M. Stefanescu

    2005-07-21

    The development of thin-wall technology allows the designers of energy consuming equipment to select the most appropriate material based on cost/material properties considerations, and not solely on density. The technology developed in this research project will permit the designers working for the automotive industry to make a better informed choice between competing materials and thin wall cast iron, thus decreasing the overall cost of the automobile.

  3. Flush Mounting Of Thin-Film Sensors

    NASA Technical Reports Server (NTRS)

    Moore, Thomas C., Sr.

    1992-01-01

    Technique developed for mounting thin-film sensors flush with surfaces like aerodynamic surfaces of aircraft, which often have compound curvatures. Sensor mounted in recess by use of vacuum pad and materials selected for specific application. Technique involves use of materials tailored to thermal properties of substrate in which sensor mounted. Together with customized materials, enables flush mounting of thin-film sensors in most situations in which recesses for sensors provided. Useful in both aircraft and automotive industries.

  4. Thin-film microelectronic wearable body sensors.

    PubMed

    Neuman, Michael R

    2015-01-01

    This review of various applications of well-established thin-film processing techniques to wearable body sensors gives examples of work done in the author's laboratory over many years. Sensors for the vital signs of body temperature, electrocardiogram, heart rate, breathing pattern and breathing rate are presented along with other applications. Thin-film based sensors have the advantage of small size, high surface area to mass ratio, flexibility, capability for batch production, and compatibility with other microelectronic technologies.

  5. Epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

  6. Thin-film reliability and engineering overview

    NASA Technical Reports Server (NTRS)

    Ross, R. G., Jr.

    1984-01-01

    The reliability and engineering technology base required for thin film solar energy conversions modules is discussed. The emphasis is on the integration of amorphous silicon cells into power modules. The effort is being coordinated with SERI's thin film cell research activities as part of DOE's Amorphous Silicon Program. Program concentration is on temperature humidity reliability research, glass breaking strength research, point defect system analysis, hot spot heating assessment, and electrical measurements technology.

  7. Thin solid-lubricant films in space

    NASA Astrophysics Data System (ADS)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  8. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2013-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film solar cells have been considered as the most promising alternatives to crystalline silicon solar cells because of their high photo-electricity conversion efficiency, reliability, and stability. However, many fabrication methods of CIGS thin film are based on vacuum processes such as evaporation and sputtering techniques which are not cost efficient. This work develops a solution method using paste or ink liquid spin-coated on glass that would be competitive to conventional ways in terms of cost effective, non-vacuum needed, and quick processing. A mixture precursor was prepared by dissolving appropriate amounts of composition chemicals. After the mixture solution was cooled, a viscous paste was prepared and ready for spin-coating process. A slight bluish CIG thin film on substrate was then put in a tube furnace with evaporation of metal Se followed by depositing CdS layer and ZnO nanoparticle thin film coating to complete a solar cell fabrication. Structure, absorption spectrum, and photo-electricity conversion efficiency for the as-grown CIGS thin film solar cell are under study.

  9. Research on Advanced Thin Film Batteries

    SciTech Connect

    Goldner, Ronald B.

    2003-11-24

    During the past 7 years, the Tufts group has been carrying out research on advanced thin film batteries composed of a thin film LiCo02 cathode (positive electrode), a thin film LiPON (lithium phosphorous oxynitride) solid electrolyte, and a thin film graphitic carbon anode (negative electrode), under grant DE FG02-95ER14578. Prior to 1997, the research had been using an rfsputter deposition process for LiCoOi and LiPON and an electron beam evaporation or a controlled anode arc evaporation method for depositing the carbon layer. The pre-1997 work led to the deposition of a single layer cell that was successfully cycled for more than 400 times [1,2] and the research also led to the deposition of a monolithic double-cell 7 volt battery that was cycled for more than 15 times [3]. Since 1997, the research has been concerned primarily with developing a research-worthy and, possibly, a production-worthy, thin film deposition process, termed IBAD (ion beam assisted deposition) for depositing each ofthe electrodes and the electrolyte of a completely inorganic solid thin film battery. The main focus has been on depositing three materials - graphitic carbon as the negative electrode (anode), lithium cobalt oxide (nominally LiCoCb) as the positive electrode (cathode), and lithium phosphorus oxynitride (LiPON) as the electrolyte. Since 1998, carbon, LiCoOa, and LiPON films have been deposited using the IBAD process with the following results.

  10. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed. PMID:27454334

  11. Carbon Nanotube Thin-Film Antennas.

    PubMed

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of <10 ohm/sq is needed to achieve a 10 dB return loss in the unbalanced antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  12. Printable CIGS thin film solar cells

    NASA Astrophysics Data System (ADS)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  13. Ultra Thin Quantum Well Materials

    SciTech Connect

    Dr Saeid Ghamaty

    2012-08-16

    This project has enabled Hi-Z technology Inc. (Hi-Z) to understand how to improve the thermoelectric properties of Si/SiGe Quantum Well Thermoelectric Materials. The research that was completed under this project has enabled Hi-Z Technology, Inc. (Hi-Z) to satisfy the project goal to understand how to improve thermoelectric conversion efficiency and reduce costs by fabricating ultra thin Si/SiGe quantum well (QW) materials and measuring their properties. In addition, Hi-Z gained critical new understanding on how thin film fabrication increases the silicon substrate's electrical conductivity, which is important new knowledge to develop critical material fabrication parameters. QW materials are constructed with alternate layers of an electrical conductor, SiGe and an electrical insulator, Si. Film thicknesses were varied, ranging from 2nm to 10nm where 10 nm was the original film thickness prior to this work. The optimum performance was determined at a Si and SiGe thickness of 4nm for an electrical current and heat flow parallel to the films, which was an important conclusion of this work. Essential new information was obtained on how the Si substrate electrical conductivity increases by up to an order of magnitude upon deposition of QW films. Test measurements and calculations are accurate and include both the quantum well and the substrate. The large increase in substrate electrical conductivity means that a larger portion of the electrical current passes through the substrate. The silicon substrate's increased electrical conductivity is due to inherent impurities and thermal donors which are activated during both molecular beam epitaxy and sputtering deposition of QW materials. Hi-Z's forward looking cost estimations based on future high performance QW modules, in which the best Seebeck coefficient and electrical resistivity are taken from separate samples predict that the electricity cost produced with a QW module could be achieved at <$0.35/W. This price would

  14. Micromotors using magnetostrictive thin films

    NASA Astrophysics Data System (ADS)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  15. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C.R.; Kozlowski, M.R.; Campbell, J.H.; Staggs, M.; Rainer, F.

    1995-12-05

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold. 9 figs.

  16. Permanent laser conditioning of thin film optical materials

    DOEpatents

    Wolfe, C. Robert; Kozlowski, Mark R.; Campbell, John H.; Staggs, Michael; Rainer, Frank

    1995-01-01

    The invention comprises a method for producing optical thin films with a high laser damage threshold and the resulting thin films. The laser damage threshold of the thin films is permanently increased by irradiating the thin films with a fluence below an unconditioned laser damage threshold.

  17. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily, clear finish, deep color intensity, semielastic, spready, 90 percent uniform, and 10 percent injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth,...

  18. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily, clear finish, deep color intensity, semielastic, spready, 90 percent uniform, and 10 percent injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth,...

  19. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily, clear finish, deep color intensity, semielastic, spready, 90 percent uniform, and 10 percent injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth,...

  20. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily, clear finish, deep color intensity, semielastic, spready, 90 percent uniform, and 10 percent injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth,...

  1. 7 CFR 29.3648 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... specifications, and tolerances C1L Choice Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth, oily, clear finish, deep color intensity, semielastic, spready, 90 percent uniform, and 10 percent injury tolerance. C2L Fine Quality Light-brown Thin Leaf. Ripe, thin, open leaf structure, smooth,...

  2. Thin film dielectric composite materials

    DOEpatents

    Jia, Quanxi; Gibbons, Brady J.; Findikoglu, Alp T.; Park, Bae Ho

    2002-01-01

    A dielectric composite material comprising at least two crystal phases of different components with TiO.sub.2 as a first component and a material selected from the group consisting of Ba.sub.1-x Sr.sub.x TiO.sub.3 where x is from 0.3 to 0.7, Pb.sub.1-x Ca.sub.x TiO.sub.3 where x is from 0.4 to 0.7, Sr.sub.1-x Pb.sub.x TiO.sub.3 where x is from 0.2 to 0.4, Ba.sub.1-x Cd.sub.x TiO.sub.3 where x is from 0.02 to 0.1, BaTi.sub.1-x Zr.sub.x O.sub.3 where x is from 0.2 to 0.3, BaTi.sub.1-x Sn.sub.x O.sub.3 where x is from 0.15 to 0.3, BaTi.sub.1-x Hf.sub.x O.sub.3 where x is from 0.24 to 0.3, Pb.sub.1-1.3x La.sub.x TiO.sub.3+0.2x where x is from 0.23 to 0.3, (BaTiO.sub.3).sub.x (PbFeo.sub.0.5 Nb.sub.0.5 O.sub.3).sub.1-x where x is from 0.75 to 0.9, (PbTiO.sub.3).sub.- (PbCo.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.1 to 0.45, (PbTiO.sub.3).sub.x (PbMg.sub.0.5 W.sub.0.5 O.sub.3).sub.1-x where x is from 0.2 to 0.4, and (PbTiO.sub.3).sub.x (PbFe.sub.0.5 Ta.sub.0.5 O.sub.3).sub.1-x where x is from 0 to 0.2, as the second component is described. The dielectric composite material can be formed as a thin film upon suitable substrates.

  3. Ambient pressure process for preparing aerogel thin films reliquified sols useful in preparing aerogel thin films

    DOEpatents

    Brinker, Charles Jeffrey; Prakash, Sai Sivasankaran

    1999-01-01

    A method for preparing aerogel thin films by an ambient-pressure, continuous process. The method of this invention obviates the use of an autoclave and is amenable to the formation of thin films by operations such as dip coating. The method is less energy intensive and less dangerous than conventional supercritical aerogel processing techniques.

  4. Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

    DOEpatents

    Carlson, David E.

    1980-01-01

    Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

  5. Childhood Risk Factors for Thin Body Preoccupation and Social Pressure to Be Thin

    ERIC Educational Resources Information Center

    Agras, W. Stewart; Bryson, Susan; Hammer, Lawrence D.; Kraemer, Helena C.

    2007-01-01

    Objective: Thin body preoccupation and social pressure to be thin (TBPSP) in adolescence are risk factors for the development of full and partial bulimia nervosa and binge eating disorder. This study examined precursors of these potent risk factors. Method: A prospective study followed 134 children from birth to 11.0 years and their parents.…

  6. Thin film absorber for a solar collector

    DOEpatents

    Wilhelm, William G.

    1985-01-01

    This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

  7. Thin Layer Samples Controlled by Dynamic Electrochemistry.

    PubMed

    Cuartero, Maria; Crespo, Gastón A; Bakker, Eric

    2015-01-01

    We summarize here recent advancements on thin layer samples controlled by dynamic electrochemistry techniques for determining different ions that include potassium, calcium, protamine, nitrate, nitrite and halides in diverse environmental and clinical samples. Generally, a thin layer liquid (less than 100 μm in thickness) is confined between a working electrode and an ion-selective membrane. Once an external electrical perturbation (i.e. constant potential) is applied to the system, an exhaustive ion transfer process is imposed in the entire thin layer solution. As a result, the observed charge (integration of the current decay) is proportional to the depleted ion concentration. Other electrochemical protocols such as linear sweep voltammetry were also explored aiming at the discrimination of several ions presented in the thin layer. One of the most attractive examples involves the detection of a mixture of three halides (iodide, bromide and chloride), which can be well resolved at moderated scan rates (10 mV.s(-1)). Paper-based coulometric sensing on thin layers defined by cellulose papers are being developed in view of translating these new concepts into a reliable and low cost sensing platform.

  8. Thin Ice Films at Mineral Surfaces.

    PubMed

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood. PMID:27377606

  9. Thin Layer Samples Controlled by Dynamic Electrochemistry.

    PubMed

    Cuartero, Maria; Crespo, Gastón A; Bakker, Eric

    2015-01-01

    We summarize here recent advancements on thin layer samples controlled by dynamic electrochemistry techniques for determining different ions that include potassium, calcium, protamine, nitrate, nitrite and halides in diverse environmental and clinical samples. Generally, a thin layer liquid (less than 100 μm in thickness) is confined between a working electrode and an ion-selective membrane. Once an external electrical perturbation (i.e. constant potential) is applied to the system, an exhaustive ion transfer process is imposed in the entire thin layer solution. As a result, the observed charge (integration of the current decay) is proportional to the depleted ion concentration. Other electrochemical protocols such as linear sweep voltammetry were also explored aiming at the discrimination of several ions presented in the thin layer. One of the most attractive examples involves the detection of a mixture of three halides (iodide, bromide and chloride), which can be well resolved at moderated scan rates (10 mV.s(-1)). Paper-based coulometric sensing on thin layers defined by cellulose papers are being developed in view of translating these new concepts into a reliable and low cost sensing platform. PMID:26668939

  10. Ferromagnetic properties of fcc Gd thin films

    SciTech Connect

    Bertelli, T. P. Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y.

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  11. Flexible, Ultra-Thin, Embedded Die Packaging

    NASA Astrophysics Data System (ADS)

    McPherson, Ryan J.

    As thin, flexible electronics solutions become more robust, their integration into everyday life becomes more likely. With possible applications in wearable electronics, biomedical sensors, or 'peel and stick' sensors, the reliability of these ultra-thin packages becomes paramount. Likewise, the density achievable with stacked packages benefits greatly from thinner die stacks. To this end, techniques previously developed have demonstrated packages with die thinned to approximately 20mum. Covered in this work are methods for thinning and packaging silicon die, as well as information on common materials used in these processes. The author's contribution is a fabrication process for embedding ultra-thin (approximately 10mum) silicon die in polyimide substrates. This method is fully illustrated in Chapter 3 and enumerated in the Appendix as a quick reference. Additionally, thermal cycle testing of passive daisy chain assemblies has shown promising reliability data. Packages were mounted in three alignments: flat, concave, and convex, and placed into thermal shock testing. Finally, the author discusses possible applications for this fabrication process, including the fabrication of multi-chip-modules.

  12. Method for synthesizing thin film electrodes

    DOEpatents

    Boyle, Timothy J.

    2007-03-13

    A method for making a thin-film electrode, either an anode or a cathode, by preparing a precursor solution using an alkoxide reactant, depositing multiple thin film layers with each layer approximately 500 1000 .ANG. in thickness, and heating the layers to above 600.degree. C. to achieve a material with electrochemical properties suitable for use in a thin film battery. The preparation of the anode precursor solution uses Sn(OCH.sub.2C(CH.sub.3).sub.3).sub.2 dissolved in a solvent in the presence of HO.sub.2CCH.sub.3 and the cathode precursor solution is formed by dissolving a mixture of (Li(OCH.sub.2C(CH.sub.3).sub.3)).sub.8 and Co(O.sub.2CCH.sub.3).H.sub.2O in at least one polar solvent.

  13. Thin Film Transistors On Plastic Substrates

    DOEpatents

    Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

    2004-01-20

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

  14. Thin film ferroelectric electro-optic memory

    NASA Technical Reports Server (NTRS)

    Thakoor, Sarita (Inventor); Thakoor, Anilkumar P. (Inventor)

    1993-01-01

    An electrically programmable, optically readable data or memory cell is configured from a thin film of ferroelectric material, such as PZT, sandwiched between a transparent top electrode and a bottom electrode. The output photoresponse, which may be a photocurrent or photo-emf, is a function of the product of the remanent polarization from a previously applied polarization voltage and the incident light intensity. The cell is useful for analog and digital data storage as well as opto-electric computing. The optical read operation is non-destructive of the remanent polarization. The cell provides a method for computing the product of stored data and incident optical data by applying an electrical signal to store data by polarizing the thin film ferroelectric material, and then applying an intensity modulated optical signal incident onto the thin film material to generate a photoresponse therein related to the product of the electrical and optical signals.

  15. Coalescence and percolation in thin metal films

    SciTech Connect

    Yu, X.; Duxbury, P.M.; Jeffers, G.; Dubson, M.A. Center for Fundamental Materials Research, Michigan State University, East Lansing, Michigan 48824-1116 )

    1991-12-15

    Metals thermally evaporated onto warm insulating substrates evolve to the thin-film state via the morphological sequence: compact islands, elongated islands, percolation, hole filling, and finally the thin-film state. The coverage at which the metal percolates ({ital p}{sub {ital c}}) is often considerably higher than that predicted by percolation models, such as inverse swiss cheese or lattice percolation. Using a simple continuum model, we show that high-{ital p}{sub {ital c}}'s arise naturally in thin films that exhibit a crossover from full coalescence of islands at early stages of growth to partial coalescence at later stages. In this interrupted-coalescence model, full coalescence of islands occurs up to a critical island radius {ital R}{sub {ital c}}, after which islands overlap, but do not fully coalesce. We present the morphology of films and the critical area coverages generated by this model.

  16. Magnetoelectric thin film composites with interdigital electrodes

    NASA Astrophysics Data System (ADS)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  17. Mesoscale morphologies in polymer thin films.

    SciTech Connect

    Ramanathan, M.; Darling, S. B.

    2011-06-01

    In the midst of an exciting era of polymer nanoscience, where the development of materials and understanding of properties at the nanoscale remain a major R&D endeavor, there are several exciting phenomena that have been reported at the mesoscale (approximately an order of magnitude larger than the nanoscale). In this review article, we focus on mesoscale morphologies in polymer thin films from the viewpoint of origination of structure formation, structure development and the interaction forces that govern these morphologies. Mesoscale morphologies, including dendrites, holes, spherulites, fractals and honeycomb structures have been observed in thin films of homopolymer, copolymer, blends and composites. Following a largely phenomenological level of description, we review the kinetic and thermodynamic aspects of mesostructure formation outlining some of the key mechanisms at play. We also discuss various strategies to direct, limit, or inhibit the appearance of mesostructures in polymer thin films as well as an outlook toward potential areas of growth in this field of research.

  18. Infrared radiation of thin plastic films.

    NASA Technical Reports Server (NTRS)

    Tien, C. L.; Chan, C. K.; Cunnington, G. R.

    1972-01-01

    A combined analytical and experimental study is presented for infrared radiation characteristics of thin plastic films with and without a metal substrate. On the basis of the thin-film analysis, a simple analytical technique is developed for determining band-averaged optical constants of thin plastic films from spectral normal transmittance data for two different film thicknesses. Specifically, the band-averaged optical constants of polyethylene terephthalate and polyimide were obtained from transmittance measurements of films with thicknesses in the range of 0.25 to 3 mil. The spectral normal reflectance and total normal emittance of the film side of singly aluminized films are calculated by use of optical constants; the results compare favorably with measured values.

  19. Cell yield. ThinPrep vs. cytocentrifuge.

    PubMed

    Papillo, J L; Lapen, D

    1994-01-01

    Cell yields on cytologic preparations made in the Cytospin II cytocentrifuge and the ThinPrep Processor were compared. Slides were prepared by each method using calibrated volumes (25 microliters) of cell suspensions from 13 nongynecologic specimens. Cell counts for each slide were calculated by counting cells in predetermined fields using a gridded reticle at 40 x magnification, then extrapolating to the total surface area of the preparation. The cell counts demonstrated that when processing equal amounts of cell suspension, the ThinPrep method retained three times as many cells as the cytocentrifuge method. The ThinPrep method, with a higher rate of cell recovery, may provide a valuable tool toward more accurate cytologic diagnosis, particularly for cytologic samples with small numbers of cells. PMID:8291353

  20. Simulated Thin-Film Growth and Imaging

    NASA Astrophysics Data System (ADS)

    Schillaci, Michael

    2001-06-01

    Thin-films have become the cornerstone of the electronics, telecommunications, and broadband markets. A list of potential products includes: computer boards and chips, satellites, cell phones, fuel cells, superconductors, flat panel displays, optical waveguides, building and automotive windows, food and beverage plastic containers, metal foils, pipe plating, vision ware, manufacturing equipment and turbine engines. For all of these reasons a basic understanding of the physical processes involved in both growing and imaging thin-films can provide a wonderful research project for advanced undergraduate and first-year graduate students. After producing rudimentary two- and three-dimensional thin-film models incorporating ballsitic deposition and nearest neighbor Coulomb-type interactions, the QM tunneling equations are used to produce simulated scanning tunneling microscope (SSTM) images of the films. A discussion of computational platforms, languages, and software packages that may be used to accomplish similar results is also given.

  1. Tungsten-doped thin film materials

    DOEpatents

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  2. Refraction in electrically thin inhomogeneous media.

    PubMed

    Ruphuy, Miguel; Ramahi, Omar M

    2016-04-01

    This work presents a new formulation for refraction from flat electrically thin lenses and reflectors comprised of inhomogeneous material. Inhomogeneous electrically thin flat lenses and reflectors cannot make use of the Snell law since this classical formulation works solely at interfaces of planar homogeneous media. The refraction of a perpendicularly incident plane wave at a planar interface is physically explained through the phase advance of the rays within the medium. The Huygens principle is then used to construct the refracted wavefront. The formulation is validated using numerical full wave simulation for several examples where the refractive angle is predicted with good accuracy. Furthermore, the formulation gives a physical insight of the phenomenon of refraction from electrically thin inhomogeneous media.

  3. Vibration welding system with thin film sensor

    DOEpatents

    Cai, Wayne W; Abell, Jeffrey A; Li, Xiaochun; Choi, Hongseok; Zhao, Jingzhou

    2014-03-18

    A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

  4. Electrostatic thin film chemical and biological sensor

    DOEpatents

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  5. AES analysis of barium fluoride thin films

    NASA Astrophysics Data System (ADS)

    Kashin, G. N.; Makhnjuk, V. I.; Rumjantseva, S. M.; Shchekochihin, Ju. M.

    1993-06-01

    AES analysis of thin films of metal fluorides is a difficult problem due to charging and decomposition of such films under electron bombardment. We have developed a simple algorithm for a reliable quantitative AES analysis of metal fluoride thin films (BaF 2 in our work). The relative AES sensitivity factors for barium and fluorine were determined from BaF 2 single-crystal samples. We have investigated the dependence of composition and stability of barium fluoride films on the substrate temperature during film growth. We found that the instability of BaF 2 films grown on GaAs substrates at high temperatures (> 525°C) is due to a loss of fluorine. Our results show that, under the optimal electron exposure conditions, AES can be used for a quantitative analysis of metal fluoride thin films.

  6. Method for making thin polypropylene film

    DOEpatents

    Behymer, R.D.; Scholten, J.A.

    1985-11-21

    An economical method is provided for making uniform thickness polypropylene film as thin as 100 Angstroms. A solution of polypropylene dissolved in xylene is formed by mixing granular polypropylene and xylene together in a flask at an elevated temperature. A substrate, such as a glass plate or microscope slide is immersed in the solution. When the glass plate is withdrawn from the solution at a uniform rate, a thin polypropylene film forms on a flat surface area of the glass plate as the result of xylene evaporation. The actual thickness of the polypropylene film is functional of the polypropylene in xylene solution concentration, and the particular withdrawal rate of the glass plate from the solution. After formation, the thin polypropylene film is floated from the glass plate onto the surface of water, from which it is picked up with a wire hoop.

  7. Thin film silicon photovoltaic module performance assessment

    NASA Astrophysics Data System (ADS)

    Jennings, Christina

    1987-06-01

    This report evaluates the performance through December, 1986 of 15 commercially-available thin film silicon-hydrogen alloy PV modules manufactured by ARCO Solar, Chronar, ECD/Sovonics, and Solarex. Advances in the technology are indicated by the performance improvements associated with each generation of thin film silicon-hydrogen alloy PV modules introduced to the commercial market. Mounted at a 30 degree tilt facing due south, all of the thin film PV modules under evaluation have experienced decreased efficiency and fill factor on initial sun exposure. Midday efficiency tends to be highest during the summer and lowest during the winter. The seasonal change in midday air mass from 1.0 during the summer to 1.4 during the winter is among the factors that counteract the temperature effects and cause lowered efficiency and fill factor values during the winter.

  8. Axisymmetric instability in a thinning electrified jet.

    PubMed

    Dharmansh; Chokshi, Paresh

    2016-04-01

    The axisymmetric stability of an electrified jet is analyzed under electrospinning conditions using the linear stability theory. The fluid is considered Newtonian with a finite electrical conductivity, modeled as a leaky dielectric medium. While the previous studies impose axisymmetric disturbances on a cylindrical jet of uniform radius, referred to as the base state, in the present study the actual thinning jet profile, obtained as the steady-state solution of the one-dimensional slender filament model, is treated as the base state. The analysis takes into account the role of variation in the jet variables like radius, velocity, electric field, and surface charge density along the thinning jet in the stability behavior. The eigenspectrum of the axisymmetric disturbance growth rate is constructed from the linearized disturbance equations discretized using the Chebyshev collocation method. The most unstable growth rate for the thinning jet is significantly different from that for the uniform radius jet. For the same electrospinning conditions, while the uniform radius jet is predicted to be highly unstable, the thinning jet profile is found to be unstable but with a relatively very low growth rate. The stabilizing role of the thinning jet is attributed to the variation in the surface charge density as well as the extensional deformation rate in the fluid ignored in the uniform radius jet analysis. The dominant mode for the thinning jet is an oscillatory conducting mode driven by the field-charge coupling. The disturbance energy balance finds the electric force to be the dominant force responsible for the disturbance growth, potentially leading to bead formation along the fiber. The role of various material and process parameters in the stability behavior is also investigated.

  9. Geometry of thin liquid sheet flows

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Calfo, Frederick D.; Mcconley, Marc W.; Mcmaster, Matthew S.; Afjeh, Abdollah A.

    1994-01-01

    Incompresible, thin sheet flows have been of research interest for many years. Those studies were mainly concerned with the stability of the flow in a surrounding gas. Squire was the first to carry out a linear, invicid stability analysis of sheet flow in air and compare the results with experiment. Dombrowski and Fraser did an experimental study of the disintegration of sheet flows using several viscous liquids. They also detected the formulation of holes in their sheet flows. Hagerty and Shea carried out an inviscid stability analysis and calculated growth rates with experimental values. They compared their calculated growth rates with experimental values. Taylor studied extensively the stability of thin liquid sheets both theoretically and experimentally. He showed that thin sheets in a vacuum are stable. Brown experimentally investigated thin liquid sheet flows as a method of application of thin films. Clark and Dumbrowski carried out second-order stability analysis for invicid sheet flows. Lin introduced viscosity into the linear stability analysis of thin sheet flows in a vacuum. Mansour and Chigier conducted an experimental study of the breakup of a sheet flow surrounded by high-speed air. Lin et al. did a linear stability analysis that included viscosity and a surrounding gas. Rangel and Sirignano carried out both a linear and nonlinear invisid stability analysis that applies for any density ratio between the sheet liquid and the surrounding gas. Now there is renewed interest in sheet flows because of their possible application as low mass radiating surfaces. The objective of this study is to investigate the fluid dynamics of sheet flows that are of interest for a space radiator system. Analytical expressions that govern the sheet geometry are compared with experimental results. Since a space radiator will operate in a vacuum, the analysis does not include any drag force on the sheet flow.

  10. Microscale damping using thin film active materials

    NASA Astrophysics Data System (ADS)

    Kerrigan, Catherine A.; Ho, Ken K.; Mohanchandra, K. P.; Carman, Gregory P.

    2007-04-01

    This paper focuses on understanding and developing a new approach to dampen MEMS structures using both experiments and analytical techniques. Thin film Nitinol and thin film Terfenol-D are evaluated as a damping solution to the micro scale damping problem. Stress induced twin boundary motion in Nitinol is used to passively dampen potentially damaging vibrations. Magnetic domain wall motion is used to passively dampen vibration in Terfenol-D. The thin films of Nitinol, Nitinol/Silicon laminates and Nitinol/Terfenol-D/Nickel laminates have been produced using a sputter deposition process and damping properties have been evaluated. Dynamic testing shows substantial damping (tan δ) measurable in each case. Nitinol film samples were tested in the Differential Scanning Calorimetry (DSC) to determine phase transformation temperatures. The twin boundary mechanism by which energy absorption occurs is present at all points below the Austenite start temperature (approximately 69°C in our film) and therefore allows damping at cold temperatures where traditional materials fail. Thin film in the NiTi/Si laminate was found to produce substantially higher damping (tan δ = 0.28) due to the change in loading condition. The NiTi/Si laminate sample was tested in bending allowing the twin boundaries to be reset by cyclic tensile and compressive loads. The thin film Terfenol-D in the Nitinol/Terfenol-D/Nickel laminate was shown to produce large damping (tan δ = 0.2). In addition to fabricating and testing, an analytical model of a heterogeneous layered thin film damping material was developed and compared to experimental work.

  11. Axisymmetric instability in a thinning electrified jet.

    PubMed

    Dharmansh; Chokshi, Paresh

    2016-04-01

    The axisymmetric stability of an electrified jet is analyzed under electrospinning conditions using the linear stability theory. The fluid is considered Newtonian with a finite electrical conductivity, modeled as a leaky dielectric medium. While the previous studies impose axisymmetric disturbances on a cylindrical jet of uniform radius, referred to as the base state, in the present study the actual thinning jet profile, obtained as the steady-state solution of the one-dimensional slender filament model, is treated as the base state. The analysis takes into account the role of variation in the jet variables like radius, velocity, electric field, and surface charge density along the thinning jet in the stability behavior. The eigenspectrum of the axisymmetric disturbance growth rate is constructed from the linearized disturbance equations discretized using the Chebyshev collocation method. The most unstable growth rate for the thinning jet is significantly different from that for the uniform radius jet. For the same electrospinning conditions, while the uniform radius jet is predicted to be highly unstable, the thinning jet profile is found to be unstable but with a relatively very low growth rate. The stabilizing role of the thinning jet is attributed to the variation in the surface charge density as well as the extensional deformation rate in the fluid ignored in the uniform radius jet analysis. The dominant mode for the thinning jet is an oscillatory conducting mode driven by the field-charge coupling. The disturbance energy balance finds the electric force to be the dominant force responsible for the disturbance growth, potentially leading to bead formation along the fiber. The role of various material and process parameters in the stability behavior is also investigated. PMID:27176407

  12. MOF thin films: existing and future applications.

    PubMed

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  13. Axisymmetric instability in a thinning electrified jet

    NASA Astrophysics Data System (ADS)

    Dharmansh; Chokshi, Paresh

    2016-04-01

    The axisymmetric stability of an electrified jet is analyzed under electrospinning conditions using the linear stability theory. The fluid is considered Newtonian with a finite electrical conductivity, modeled as a leaky dielectric medium. While the previous studies impose axisymmetric disturbances on a cylindrical jet of uniform radius, referred to as the base state, in the present study the actual thinning jet profile, obtained as the steady-state solution of the one-dimensional slender filament model, is treated as the base state. The analysis takes into account the role of variation in the jet variables like radius, velocity, electric field, and surface charge density along the thinning jet in the stability behavior. The eigenspectrum of the axisymmetric disturbance growth rate is constructed from the linearized disturbance equations discretized using the Chebyshev collocation method. The most unstable growth rate for the thinning jet is significantly different from that for the uniform radius jet. For the same electrospinning conditions, while the uniform radius jet is predicted to be highly unstable, the thinning jet profile is found to be unstable but with a relatively very low growth rate. The stabilizing role of the thinning jet is attributed to the variation in the surface charge density as well as the extensional deformation rate in the fluid ignored in the uniform radius jet analysis. The dominant mode for the thinning jet is an oscillatory conducting mode driven by the field-charge coupling. The disturbance energy balance finds the electric force to be the dominant force responsible for the disturbance growth, potentially leading to bead formation along the fiber. The role of various material and process parameters in the stability behavior is also investigated.

  14. Stability analysis of dynamic thin shells

    NASA Astrophysics Data System (ADS)

    Lobo, Francisco S. N.; Crawford, Paulo

    2005-11-01

    We analyse the stability of generic spherically symmetric thin shells to linearized perturbations around static solutions. We include the momentum flux term in the conservation identity, deduced from the 'ADM' constraint and the Lanczos equations. Following the Ishak Lake analysis, we deduce a master equation which dictates the stable equilibrium configurations. Considering the transparency condition, we study the stability of thin shells around black holes, showing that our analysis is in agreement with previous results. Applying the analysis to traversable wormhole geometries, by considering specific choices for the form function, we deduce stability regions and find that the latter may be significantly increased by considering appropriate choices for the redshift function.

  15. Insect thin films as solar collectors.

    PubMed

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  16. Performance tests of large thin vacuum windows

    SciTech Connect

    Hall Crannell

    2011-02-01

    Tests of thin composition vacuum windows of the type used for the Tagger in Hall B at the Thomas Jefferson National Accelerator Facility are described. Three different tests have been performed. These include: (1) measurement of the deformation and durability of a window under long term (>8 years) almost continuous vacuum load, (2) measurement of the deformation as a function of flexing of the window as it is cycled between vacuum and atmosphere, and (3) measurement of the relative diffusion rate of gas through a variety of thin window membranes.

  17. Thin shells joining local cosmic string geometries

    NASA Astrophysics Data System (ADS)

    Eiroa, Ernesto F.; Rubín de Celis, Emilio; Simeone, Claudio

    2016-10-01

    In this article we present a theoretical construction of spacetimes with a thin shell that joins two different local cosmic string geometries. We study two types of global manifolds, one representing spacetimes with a thin shell surrounding a cosmic string or an empty region with Minkowski metric, and the other corresponding to wormholes which are not symmetric across the throat located at the shell. We analyze the stability of the static configurations under perturbations preserving the cylindrical symmetry. For both types of geometries we find that the static configurations can be stable for suitable values of the parameters.

  18. Emittance Theory for Thin Film Selective Emitter

    NASA Technical Reports Server (NTRS)

    Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

    1994-01-01

    Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

  19. Thin film photovoltaics -- Strategy of Eurec Agency

    SciTech Connect

    Bloss, W.H.

    1994-12-31

    European activities in the field of thin film photovoltaics are coordinated in a network by Eurec Agency (European Renewable Energy Centres Agency). Main emphasis lies in the development of an appropriate production technology of CIS and CdTe based photovoltaic modules in an industrial scale. These efforts are supported by a research program on relevant materials, structures and processes for thin film photovoltaics. Substantial progress has been achieved during the last years which opens new perspectives for future trends. Joint efforts in research and development based on CIS are coordinated by the network EUROCIS. A screening program on natural minerals with relevance to photovoltaic performance provides the basis for further strategic steps.

  20. Thin-shell instability in collisionless plasma.

    PubMed

    Dieckmann, M E; Ahmed, H; Doria, D; Sarri, G; Walder, R; Folini, D; Bret, A; Ynnerman, A; Borghesi, M

    2015-09-01

    Thin-shell instability is one process which can generate entangled structures in astrophysical plasma on collisional (fluid) scales. It is driven by a spatially varying imbalance between the ram pressure of the inflowing upstream plasma and the downstream's thermal pressure at a nonplanar shock. Here we show by means of a particle-in-cell simulation that an analog process can destabilize a thin shell formed by two interpenetrating, unmagnetized, and collisionless plasma clouds. The amplitude of the shell's spatial modulation grows and saturates after about ten inverse proton plasma frequencies, when the shell consists of connected piecewise linear patches.

  1. Feasibility Study of Thin Film Thermocouple Piles

    NASA Technical Reports Server (NTRS)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  2. Micro-sensor thin-film anemometer

    NASA Technical Reports Server (NTRS)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  3. Borocarbide thin films and tunneling measurements.

    SciTech Connect

    Iavarone, M.; Andreone, A.; Cassinese, A.; Dicapual, R.; giannil, L.; Vagliol, R.; DeWilde, Y.; Crabtree, G. W.

    2000-06-15

    The results obtained by their group in thin film fabrication and STM tunneling on superconducting borocarbides YNi{sub 2}B{sub 2}C have been be briefly reviewed. Results concerning the microwave surface impedance and the S/N planar junctions on LuNi{sub 2}B{sub 2}C thin films have been also presented and analyzed. These new data unambiguously confirm the full BCS nature of the superconducting gap in borocarbides and the absence of significant pair-breaking effects in LuNi{sub 2}B{sub 2}C.

  4. Thin-film Rechargeable Lithium Batteries

    DOE R&D Accomplishments Database

    Dudney, N. J.; Bates, J. B.; Lubben, D.

    1995-06-01

    Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

  5. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M. ); Schultz, J.A. ); Schmidt, H.K. ); Chang, R.P.H. . Dept. of Materials Science)

    1992-01-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 [Angstrom]), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 [Angstrom] of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.

  6. Ion beam-based characterization of multicomponent oxide thin films and thin film layered structures

    SciTech Connect

    Krauss, A.R.; Rangaswamy, M.; Lin, Yuping; Gruen, D.M.; Schultz, J.A.; Schmidt, H.K.; Chang, R.P.H.

    1992-11-01

    Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 {Angstrom}), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 {Angstrom} of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.

  7. Flexoelectricity in barium strontium titanate thin film

    SciTech Connect

    Kwon, Seol Ryung; Huang, Wenbin; Yuan, Fuh-Gwo; Jiang, Xiaoning; Shu, Longlong; Maria, Jon-Paul

    2014-10-06

    Flexoelectricity, the linear coupling between the strain gradient and the induced electric polarization, has been intensively studied as an alternative to piezoelectricity. Especially, it is of interest to develop flexoelectric devices on micro/nano scales due to the inherent scaling effect of flexoelectric effect. Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin film with a thickness of 130 nm was fabricated on a silicon wafer using a RF magnetron sputtering process. The flexoelectric coefficients of the prepared thin films were determined experimentally. It was revealed that the thin films possessed a transverse flexoelectric coefficient of 24.5 μC/m at Curie temperature (∼28 °C) and 17.44 μC/m at 41 °C. The measured flexoelectric coefficients are comparable to that of bulk BST ceramics, which are reported to be 10–100 μC/m. This result suggests that the flexoelectric thin film structures can be effectively used for micro/nano-sensing devices.

  8. Process development of thin strip steel casting

    SciTech Connect

    Sussman, R.C.; Williams, R.S.

    1990-12-01

    An important new frontier is being opened in steel processing with the emergence of thin strip casting. Casting steel directly to thin strip has enormous benefits in energy savings by potentially eliminating the need for hot reduction in a hot strip mill. This has been the driving force for numerous current research efforts into the direct strip casting of steel. The US Department of Energy initiated a program to evaluate the development of thin strip casting in the steel industry. In earlier phases of this program, planar flow casting on an experimental caster was studied by a team of engineers from Westinghouse Electric corporation and Armco Inc. A subsequent research program was designed as a fundamental and developmental study of both planar and melt overflow casting processes. This study was arranged as several separate and distinct tasks which were often completed by different teams of researchers. An early task was to design and build a water model to study fluid flow through different designs of planar flow casting nozzles. Another important task was mathematically modeling of melt overflow casting process. A mathematical solidification model for the formation of the strip in the melt overflow process was written. A study of the material and conditioning of casting substrates was made on the small wheel caster using the melt overflow casting process. This report discusses work on the development of thin steel casting.

  9. Analysis of a Thin Optical Lens Model

    ERIC Educational Resources Information Center

    Ivchenko, Vladimir V.

    2011-01-01

    In this article a thin optical lens model is considered. It is shown that the limits of its applicability are determined not only by the ratio between the thickness of the lens and the modules of the radii of curvature, but above all its geometric type. We have derived the analytical criteria for the applicability of the model for different types…

  10. Thin film hydrous metal oxide catalysts

    DOEpatents

    Dosch, Robert G.; Stephens, Howard P.

    1995-01-01

    Thin film (<100 nm) hydrous metal oxide catalysts are prepared by 1) synthesis of a hydrous metal oxide, 2) deposition of the hydrous metal oxide upon an inert support surface, 3) ion exchange with catalytically active metals, and 4) activating the hydrous metal oxide catalysts.

  11. Semiconductor cooling by thin-film thermocouples

    NASA Technical Reports Server (NTRS)

    Tick, P. A.; Vilcans, J.

    1970-01-01

    Thin-film, metal alloy thermocouple junctions do not rectify, change circuit impedance only slightly, and require very little increase in space. Although they are less efficient cooling devices than semiconductor junctions, they may be applied to assist conventional cooling techniques for electronic devices.

  12. Thin films, asphaltenes, and reservoir wettability

    SciTech Connect

    Kaminsky, R.; Bergeron, V.; Radke, C.J. |

    1993-04-01

    Reservoir wettability impacts the success of oil recovery by waterflooding and other methods. To understand wettability and its alteration, thin-film forces in solid-aqueous-oil systems must be elucidated. Upon rupture of thick aqueous films separating the oil and rock phases, asphaltene components in the crude oil adsorb irreversibly on the solid surface, changing it from water-wet to oil-wet. Conditions of wettability alteration can be found by performing adhesion tests, in which an oil droplet is brought into contact with a solid surface. Exceeding a critical capillary pressure destabilizes the film, causing spontaneous film rupture to a molecularly adsorbed layer and oil adhesion accompanied by pinning at the three-phase contact line. The authors conduct adhesion experiments similar to those of Buckley and Morrow and simultaneously examine the state of the underlying thin film using optical microscopy and microinterferometry. Aqueous thin films between an asphaltic Orcutt crude oil and glass surfaces are studied as a function of aqueous pH and salinity. For the first time, they prove experimentally that strongly water-wet to strongly oil-wet wettability alteration and contact-angle pinning occur when thick aqueous films thin to molecularly adsorbed films and when the oil phase contains asphaltene molecules.

  13. Biomolecular detection with a thin membrane transducer.

    PubMed

    Cha, Misun; Shin, Jaeha; Kim, June-Hyung; Kim, Ilchaek; Choi, Junbo; Lee, Nahum; Kim, Byung-Gee; Lee, Junghoon

    2008-06-01

    We present a thin membrane transducer (TMT) that can detect nucleic acid based biomolecular reactions including DNA hybridization and protein recognition by aptamers. Specific molecular interactions on an extremely thin and flexible membrane surface cause the deflection of the membrane due to surface stress change which can be measured by a compact capacitive circuit. A gold-coated thin PDMS membrane assembled with metal patterned glass substrate is used to realize the capacitive detection. It is demonstrated that perfect match and mismatch hybridizations can be sharply discriminated with a 16-mer DNA oligonucleotide immobilized on the gold-coated surface. While the mismatched sample caused little capacitance change, the perfectly matched sample caused a well-defined capacitance decrease vs. time due to an upward deformation of the membrane by a compressive surface stress. Additionally, the TMT demonstrated the single nucleotide polymorphism (SNP) capabilities which enabled a detection of mismatching base pairs in the middle of the sequence. It is intriguing that the increase of capacitance, therefore a downward deflection due to tensile stress, was observed with the internal double mismatch hybridization. We further present the detection of thrombin protein through ligand-receptor type recognition with 15-mer thrombin aptamer as a receptor. Key aspects of this detection such as the effect of concentration variation are investigated. This capacitive thin membrane transducer presents a completely new approach for detecting biomolecular reactions with high sensitivity and specificity without molecular labelling and optical measurement. PMID:18497914

  14. Thin-Film Solid Oxide Fuel Cells

    NASA Technical Reports Server (NTRS)

    Chen, Xin; Wu, Nai-Juan; Ignatiev, Alex

    2009-01-01

    The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

  15. Thick Slice and Thin Slice Teaching Evaluations

    ERIC Educational Resources Information Center

    Tom, Gail; Tong, Stephanie Tom; Hesse, Charles

    2010-01-01

    Student-based teaching evaluations are an integral component to institutions of higher education. Previous work on student-based teaching evaluations suggest that evaluations of instructors based upon "thin slice" 30-s video clips of them in the classroom correlate strongly with their end of the term "thick slice" student evaluations. This study's…

  16. US polycrystalline thin film solar cells program

    SciTech Connect

    Ullal, H S; Zweibel, K; Mitchell, R L

    1989-11-01

    The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

  17. Thin-Slice Perception Develops Slowly

    ERIC Educational Resources Information Center

    Balas, Benjamin; Kanwisher, Nancy; Saxe, Rebecca

    2012-01-01

    Body language and facial gesture provide sufficient visual information to support high-level social inferences from "thin slices" of behavior. Given short movies of nonverbal behavior, adults make reliable judgments in a large number of tasks. Here we find that the high precision of adults' nonverbal social perception depends on the slow…

  18. Thin Layer Chromatography (TLC) of Chlorophyll Pigments.

    ERIC Educational Resources Information Center

    Foote, Jerry

    1984-01-01

    Background information, list of materials needed, procedures used, and discussion of typical results are provided for an experiment on the thin layer chromatography of chlorophyll pigments. The experiment works well in high school, since the chemicals used are the same as those used in paper chromatography of plant pigments. (JN)

  19. Detecting Psychopathy from Thin Slices of Behavior

    ERIC Educational Resources Information Center

    Fowler, Katherine A.; Lilienfeld, Scott O.; Patrick, Christopher J.

    2009-01-01

    This study is the first to demonstrate that features of psychopathy can be reliably and validly detected by lay raters from "thin slices" (i.e., small samples) of behavior. Brief excerpts (5 s, 10 s, and 20 s) from interviews with 96 maximum-security inmates were presented in video or audio form or in both modalities combined. Forty raters used…

  20. Method of producing thin cellulose nitrate film

    DOEpatents

    Lupica, S.B.

    1975-12-23

    An improved method for forming a thin nitrocellulose film of reproducible thickness is described. The film is a cellulose nitrate film, 10 to 20 microns in thickness, cast from a solution of cellulose nitrate in tetrahydrofuran, said solution containing from 7 to 15 percent, by weight, of dioctyl phthalate, said cellulose nitrate having a nitrogen content of from 10 to 13 percent.

  1. On the Theory of Thin Shallow Shells

    NASA Technical Reports Server (NTRS)

    Nazarov, A. A.

    1956-01-01

    This report is concerned with the theory of thin shallow shells. It does not employ the lines of curvature as the coordinate system, but employs "almost cartesian coordinates" or the coordinates obtained by cutting the surface into two mutually orthogonal systems of parallel planes.

  2. Thin solar cell and lightweight array

    NASA Technical Reports Server (NTRS)

    Brandhorst, Henry W., Jr. (Inventor); Weinberg, Irving (Inventor)

    1991-01-01

    A thin, lightweight solar cell that utilizes front contact metallization is presented. Both the front light receiving surface of the solar cell and the facing surface of the cover glass are recessed to accommodate this metallization. This enables the two surfaces to meet flush for an optimum seal.

  3. Bimodal swelling responses in microgel thin films.

    PubMed

    Sorrell, Courtney D; Lyon, L Andrew

    2007-04-26

    A series of studies on microgel thin films is described, wherein quartz crystal microgravimetry (QCM), surface plasmon resonance (SPR), and atomic force microscopy (AFM) have been used to probe the properties of microstructured polymer thin films as a function of film architecture and solution pH. Thin films composed of pNIPAm-co-AAc microgels were constructed by using spin-coating layer-by-layer (scLbL) assembly with poly(allylamine hydrochloride) (PAH) as a polycationic "glue". Our findings suggest that the interaction between the negatively charged microgels and the positively charged PAH has a significant impact on the pH responsivity of the film. These effects are observable in both the optical and mechanical behaviors of the films. The most significant changes in behavior are observed when the motional resistance of a quartz oscillator is monitored via QCM experiments. Slight changes to the film architecture and alternating the pH of the environment significantly changes the QCM and SPR responses, suggesting a pH-dependent swelling that is dependent on both particle swelling and polyelectrolyte de-complexation. Together, these studies allow for a deeper understanding of the morphological changes that take place in environmentally responsive microgel-based thin films. PMID:17407344

  4. Rechargeable Thin-film Lithium Batteries

    DOE R&D Accomplishments Database

    Bates, J. B.; Gruzalski, G. R.; Dudney, N. J.; Luck, C. F.; Yu, Xiaohua

    1993-08-01

    Rechargeable thin film batteries consisting of lithium metal anodes, an amorphous inorganic electrolyte, and cathodes of lithium intercalation compounds have recently been developed. The batteries, which are typically less than 6 {mu}m thick, can be fabricated to any specified size, large or small, onto a variety of substrates including ceramics, semiconductors, and plastics. The cells that have been investigated include Li TiS{sub 2}, Li V{sub 2}O{sub 5}, and Li Li{sub x}Mn{sub 2}O{sub 4}, with open circuit voltages at full charge of about 2.5, 3.6, and 4.2, respectively. The development of these batteries would not have been possible without the discovery of a new thin film lithium electrolyte, lithium phosphorus oxynitride, that is stable in contact with metallic lithium at these potentials. Deposited by rf magnetron sputtering of Li{sub 3}PO{sub 4} in N{sub 2}, this material has a typical composition of Li{sub 2.9}PO{sub 3.3}N{sub 0.46} and a conductivity at 25{degrees}C of 2 {mu}S/cm. The maximum practical current density obtained from the thin film cells is limited to about 100 {mu}A/cm{sup 2} due to a low diffusivity of Li{sup +} ions in the cathodes. In this work, the authors present a short review of their work on rechargeable thin film lithium batteries.

  5. Strong field electrodynamics of a thin foil

    SciTech Connect

    Bulanov, Sergei V.; Esirkepov, Timur Zh.; Kando, Masaki; Bulanov, Stepan S.; Rykovanov, Sergey G.; Pegoraro, Francesco

    2013-12-15

    Exact solutions describing the nonlinear electrodynamics of a thin double layer foil are presented. These solutions correspond to a broad range of problems of interest for the interaction of high intensity laser pulses with overdense plasmas, such as frequency upshifting, high order harmonic generation, and high energy ion acceleration.

  6. UV absorption control of thin film growth

    DOEpatents

    Biefeld, Robert M.; Hebner, Gregory A.; Killeen, Kevin P.; Zuhoski, Steven P.

    1991-01-01

    A system for monitoring and controlling the rate of growth of thin films in an atmosphere of reactant gases measures the UV absorbance of the atmosphere and calculates the partial pressure of the gases. The flow of reactant gases is controlled in response to the partial pressure.

  7. An Electrochemical Experiment Using an Optically Transparent Thin Layer Electrode

    ERIC Educational Resources Information Center

    DeAngelis, Thomas P.; Heineman, William R.

    1976-01-01

    Describes a unified experiment in which an optically transparent thin layer electrode is used to illustrate the techniques of thin layer electrochemistry, cyclic voltammetry, controlled potential coulometry, and spectroelectrochemistry. (MLH)

  8. Applications of Direct-Print Imaging with Thin-Sections.

    ERIC Educational Resources Information Center

    Nuhfer, E. B.; Vinopal, R. J.

    1979-01-01

    Describes a process by which prints are produced using thin sections as negatives in a photographic enlarger. Design of a thin section holder, exposure times for common rock types, and several sample illustrations are provided. (Author/MA)

  9. Characteristics of heat transfer fouling of thin stillage using model thin stillage and evaporator concentrates

    NASA Astrophysics Data System (ADS)

    Challa, Ravi Kumar

    The US fuel ethanol demand was 50.3 billion liters (13.3 billion gallons) in 2012. Corn ethanol was produced primarily by dry grind process. Heat transfer equipment fouling occurs during corn ethanol production and increases the operating expenses of ethanol plants. Following ethanol distillation, unfermentables are centrifuged to separate solids as wet grains and liquid fraction as thin stillage. Evaporator fouling occurs during thin stillage concentration to syrup and decreases evaporator performance. Evaporators need to be shutdown to clean the deposits from the evaporator surfaces. Scheduled and unscheduled evaporator shutdowns decrease process throughput and results in production losses. This research were aimed at investigating thin stillage fouling characteristics using an annular probe at conditions similar to an evaporator in a corn ethanol production plant. Fouling characteristics of commercial thin stillage and model thin stillage were studied as a function of bulk fluid temperature and heat transfer surface temperature. Experiments were conducted by circulating thin stillage or carbohydrate mixtures in a loop through the test section which consisted of an annular fouling probe while maintaining a constant heat flux by electrical heating and fluid flow rate. The change in fouling resistance with time was measured. Fouling curves obtained for thin stillage and concentrated thin stillage were linear with time but no induction periods were observed. Fouling rates for concentrated thin stillage were higher compared to commercial thin stillage due to the increase in solid concentration. Fouling rates for oil skimmed and unskimmed concentrated thin stillage were similar but lower than concentrated thin stillage at 10% solids concentration. Addition of post fermentation corn oil to commercial thin stillage at 0.5% increments increased the fouling rates up to 1% concentration but decreased at 1.5%. As thin stillage is composed of carbohydrates, protein, lipid

  10. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect

    Seo, Won-Oh; Kim, Jihyun; Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol; Kim, Donghwan

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2 MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  11. Layer Thinning in Freely-Suspended Thin Liquid Films of a Symmetric Liquid Crystal Dimer

    NASA Astrophysics Data System (ADS)

    Pardaev, Shokir; Parsouzi, Zeinab; Gleeson, James; Jakli, Antal; Sprunt, Samuel

    We report optical reflectivity and dynamic light scattering (DLS) studies on freely suspended smectic films of a symmetric liquid crystal dimer, which exhibits the phase sequence isotropic--nematic--twist-bend nematic--smectic in cooling. In sufficiently thin films the reflectivity R is expected to scale as the square of the number of smectic layers (N2) while the frequency f of underdamped layer fluctuations scales as N - 1 / 2. On heating thin films drawn in the smectic phase, we observe a sequence of layer thinning transitions, with R and f following the expected scaling relations, provided the stepwise melting involves double rather than single layers. We will describe a model to explain the unusual layer thinning process. We thank M. G. Tamba and G. Mehl for providing the liquid crystal compound: NSF grant DMR-1307674.

  12. Back-thinning process research and characteristics measurement of thin sensor

    NASA Astrophysics Data System (ADS)

    Jeon, H. B.; Kang, K. H.; Park, H.; Park, Kun-Sik

    2015-12-01

    It is important to develop a thin silicon detector using a large silicon wafer to reduce multiple Coulomb scattering and the material budget. A Si-CsI detector in a large acceptance multi-purpose spectrometer (LAMPS) is considered to identify isotopes. The thickness of the first of three silicon sensors in front of the CsI(Tl) crystal is 100 μm. We aim to establish a manufacturing process for thinning using a 6-inch silicon wafer that provides the characteristics of a photodiode. In this paper, we present a back-thinning process of the photodiode, and comparisons of its electrical characteristics and signal-to-noise ratios before and after the thinning process.

  13. Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films

    SciTech Connect

    Hellman, Frances

    1998-10-03

    OAK B204 Growth Induced Magnetic Anisotropy in Crystalline and Amorphous Thin Films. The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and hTi-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials.

  14. Thin Images Reflected in the Water: Narcissism and Girls' Vulnerability to the Thin-Ideal.

    PubMed

    Thomaes, Sander; Sedikides, Constantine

    2016-10-01

    The purpose of this research is to test how adolescent girls' narcissistic traits-characterized by a need to impress others and avoid ego-threat-influence acute adverse effects of thin-ideal exposure. Participants (11-15 years; total N = 366; all female) reported their narcissistic traits. Next, in two experiments, they viewed images of either very thin or average-sized models, reported their wishful identification with the models (Experiment 2), and tasted high-calorie foods in an alleged taste test (both experiments). Narcissism kept girls from wishfully identifying with thin models, which is consistent with the view that narcissistic girls are prone to disengage from thin-ideal exposure. Moreover, narcissism protected vulnerable girls (those who experience low weight-esteem) from inhibiting their food intake, and led other girls (those who consider their appearance relatively unimportant) to increase their food intake. These effects did not generalize to conceptually related traits of self-esteem and perfectionism, and were not found for a low-calorie foods outcome, attesting to the specificity of findings. These experiments demonstrate the importance of narcissism at reducing girls' thin-ideal vulnerability. Girls high in narcissism disengage self-protectively from threats to their self-image, a strategy that renders at least subsets of them less vulnerable to the thin-ideal.

  15. Growth induced magnetic anisotropy in crystalline and amorphous thin films

    SciTech Connect

    Hellman, F.

    1998-07-20

    The work in the past 6 months has involved three areas of magnetic thin films: (1) amorphous rare earth-transition metal alloys, (2) epitaxial Co-Pt and Ni-Pt alloy thin films, and (3) collaborative work on heat capacity measurements of magnetic thin films, including nanoparticles and CMR materials. A brief summary of work done in each area is given.

  16. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ..., pale color intensity, narrow, 70 percent uniform, and 30 percent injury tolerance. C5L Low Light-brown..., 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color or Variegated Thin Leaf..., and 20 percent injury tolerance. C4M Fair Mixed Color or Variegated Thin Leaf. Thin, mature,...

  17. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ... finish, deep color intensity, spready, 90 percent uniform, and 10 percent injury tolerance. Good Light... color intensity, narrow, 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color Thin... uniform, and 20 percent injury tolerance. C4M Fair Mixed Color Thin Leaf. Thin to medium body,...

  18. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ..., pale color intensity, narrow, 70 percent uniform, and 30 percent injury tolerance. C5L Low Light-brown..., 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color or Variegated Thin Leaf..., and 20 percent injury tolerance. C4M Fair Mixed Color or Variegated Thin Leaf. Thin, mature,...

  19. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2014 CFR

    2014-01-01

    ... finish, deep color intensity, spready, 90 percent uniform, and 10 percent injury tolerance. Good Light... color intensity, narrow, 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color Thin... uniform, and 20 percent injury tolerance. C4M Fair Mixed Color Thin Leaf. Thin to medium body,...

  20. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ..., pale color intensity, narrow, 70 percent uniform, and 30 percent injury tolerance. C5L Low Light-brown..., 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color or Variegated Thin Leaf..., and 20 percent injury tolerance. C4M Fair Mixed Color or Variegated Thin Leaf. Thin, mature,...

  1. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ..., pale color intensity, narrow, 70 percent uniform, and 30 percent injury tolerance. C5L Low Light-brown..., 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color or Variegated Thin Leaf..., and 20 percent injury tolerance. C4M Fair Mixed Color or Variegated Thin Leaf. Thin, mature,...

  2. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2012 CFR

    2012-01-01

    ... finish, deep color intensity, spready, 90 percent uniform, and 10 percent injury tolerance. Good Light... color intensity, narrow, 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color Thin... uniform, and 20 percent injury tolerance. C4M Fair Mixed Color Thin Leaf. Thin to medium body,...

  3. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2013 CFR

    2013-01-01

    ... finish, deep color intensity, spready, 90 percent uniform, and 10 percent injury tolerance. Good Light... color intensity, narrow, 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color Thin... uniform, and 20 percent injury tolerance. C4M Fair Mixed Color Thin Leaf. Thin to medium body,...

  4. 7 CFR 29.2663 - Thin Leaf (C Group).

    Code of Federal Regulations, 2011 CFR

    2011-01-01

    ..., pale color intensity, narrow, 70 percent uniform, and 30 percent injury tolerance. C5L Low Light-brown..., 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color or Variegated Thin Leaf..., and 20 percent injury tolerance. C4M Fair Mixed Color or Variegated Thin Leaf. Thin, mature,...

  5. 7 CFR 29.2438 - Thin Leaf (C Group).

    Code of Federal Regulations, 2010 CFR

    2010-01-01

    ... finish, deep color intensity, spready, 90 percent uniform, and 10 percent injury tolerance. Good Light... color intensity, narrow, 60 percent uniform, and 40 percent injury tolerance. C3M Good Mixed Color Thin... uniform, and 20 percent injury tolerance. C4M Fair Mixed Color Thin Leaf. Thin to medium body,...

  6. Characteristics of heat transfer fouling of thin stillage using model thin stillage and evaporator concentrates

    NASA Astrophysics Data System (ADS)

    Challa, Ravi Kumar

    The US fuel ethanol demand was 50.3 billion liters (13.3 billion gallons) in 2012. Corn ethanol was produced primarily by dry grind process. Heat transfer equipment fouling occurs during corn ethanol production and increases the operating expenses of ethanol plants. Following ethanol distillation, unfermentables are centrifuged to separate solids as wet grains and liquid fraction as thin stillage. Evaporator fouling occurs during thin stillage concentration to syrup and decreases evaporator performance. Evaporators need to be shutdown to clean the deposits from the evaporator surfaces. Scheduled and unscheduled evaporator shutdowns decrease process throughput and results in production losses. This research were aimed at investigating thin stillage fouling characteristics using an annular probe at conditions similar to an evaporator in a corn ethanol production plant. Fouling characteristics of commercial thin stillage and model thin stillage were studied as a function of bulk fluid temperature and heat transfer surface temperature. Experiments were conducted by circulating thin stillage or carbohydrate mixtures in a loop through the test section which consisted of an annular fouling probe while maintaining a constant heat flux by electrical heating and fluid flow rate. The change in fouling resistance with time was measured. Fouling curves obtained for thin stillage and concentrated thin stillage were linear with time but no induction periods were observed. Fouling rates for concentrated thin stillage were higher compared to commercial thin stillage due to the increase in solid concentration. Fouling rates for oil skimmed and unskimmed concentrated thin stillage were similar but lower than concentrated thin stillage at 10% solids concentration. Addition of post fermentation corn oil to commercial thin stillage at 0.5% increments increased the fouling rates up to 1% concentration but decreased at 1.5%. As thin stillage is composed of carbohydrates, protein, lipid

  7. Crystallization of In-Se/CuInSe 2 thin-film stack by sequential electrodeposition and annealing

    NASA Astrophysics Data System (ADS)

    Oda, Y.; Matsubayashi, M.; Minemoto, T.; Takakura, H.

    2009-01-01

    CuInSe 2 (CIS) films with large grain sizes and slightly In-rich composition ratios were realized by a sequential electrodeposition (ED) and annealing of In-Se/CIS bilayers. In general, ED-CIS films needed to be crystallized by annealing and the Cu/In ratios needed adjustment by KCN etching because they were amorphous with Cu-rich compositional ratios. KCN etchings cause pits and crevasses as defects by removal of Cu 2-xSe compounds formed on the surface and in the grain boundary in the annealing process. These defects should work as shunt paths for solar cells with ED-CIS films. In this study, we attempted to fabricate In-Se/CIS bilayers by sequential ED and annealing to solve this serial issue. ED-In-Se films could be realized not on ED-CIS films but on the annealed CIS films by the difference in each oxidation potential. At the electric charges of 1.5-1.8 C for In-Se with a coulomb meter, Cu/In ratios of bilayers annealed at 600 °C for 10 min under Ar atmosphere could be adjusted to 0.9-1.0. At the same annealing condition, the complete intermixing of bilayers and the crystal grain growth were realized. As a result, the best solar cell fabricated with the film resulted in around 2% efficiency.

  8. Defect-free thin film membranes for H2 separation and isolation.

    SciTech Connect

    Nenoff, Tina Maria; Keller, Jay O.; Welk, Margaret Ellen

    2004-05-01

    There is a great need for robust, defect-free, highly selective molecular sieve (zeolite) thin film membranes for light gas molecule separations in hydrogen fuel production from CH{sub 4} or H{sub 2}O sources. In particular, we are interested in (1) separating and isolating H{sub 2} from H{sub 2}O and CH{sub 4}, CO, CO{sub 2}, O{sub 2}, N{sub 2} gases; (2) water management in PEMs and (3) as a replacement for expensive Pt catalysts needed for PEMs. Current hydrogen separation membranes are based on Pd alloys or on chemically and mechanically unstable organic polymer membranes. The use of molecular sieves brings a stable (chemically and mechanically stable) inorganic matrix to the membrane [1-3]. The crystalline frameworks have 'tunable' pores that are capable of size exclusion separations. The frameworks are made of inorganic oxides (e.g., silicates, aluminosilicates, and phosphates) that bring different charge and electrostatic attraction forces to the separation media. The resultant materials have high separation abilities plus inherent thermal stability over 600 C and chemical stability. Furthermore, the crystallographically defined (<1 {angstrom} deviation) pore sizes and shapes allow for size exclusion of very similarly sized molecules. In contrast, organic polymer membranes are successful based on diffusion separations, not size exclusion. We envision the impact of positive results from this project in the near term with hydrocarbon fuels, and long term with biomass fuels. There is a great need for robust, defect-free, highly selective molecular sieve (zeolite) thin film membranes for light gas molecule separations in hydrogen fuel production from CH{sub 4} or H{sub 2}O sources. They contain an inherent chemical, thermal and mechanical stability not found in conventional membrane materials. Our goal is to utilize those zeolitic qualities in membranes for the separation of light gases, and to eventually partner with industry to commercialize the membranes. To

  9. Self-thinning Concepts Applied to Savannas

    NASA Astrophysics Data System (ADS)

    Sea, W. B.; Hanan, N. P.

    2005-12-01

    Most investigations into savanna vegetation dynamics have focused either on tree-grass partitioning of water resources or on the effects of disturbances such as fire and herbivory on vegetation structure. Few studies have focused exclusively on tree-tree competition as a mechanism structuring savanna vegetation. The studies that have considered tree-tree competition have used nearest neighborhood methods to infer competition from the spatial pattern of trees, and the results of these studies for savannas have been mixed. However, no substantive work has studied tree-tree competition in savannas using the self-thinning concept, which is surprising since the concept is so heavily used in forest ecology. The self-thinning concept is a power law scaling relationship between mean size and density, with the intercept characterizing the carrying capacity of the system and the slope relating size-dependent resource use. Sankaran et al. (2005) have recently shown a pronounced linear relationship between average annual precipitation and maximum tree cover for a large number of savanna sites in Africa. We propose that tree-tree competition may be a likely mechanism generating the precipitation-rainfall pattern and that a self-thinning analysis can be helpful to further explain the relationship. Here, we examine self-thinning in savannas along a strong rainfall gradient in Kruger National Park, South Africa. The rainfall gradient varies from 750 mm annual average precipitation in the southeastern portion of the park to approximately 350 mm in the far north. The park also has a pronounced soil divide, with the western half of the park largely existing on granitic substrate and the eastern portion of the park on basalt. The study makes use of long-term fire-suppressed plots, where fire has been excluded for over 50 years but canopy cover levels are as low as 30 percent. Results presented show that the intercept increases uniformly along the rainfall gradient, but that the

  10. Doping in zinc oxide thin films

    NASA Astrophysics Data System (ADS)

    Yang, Zheng

    Doping in zinc oxide (ZnO) thin films is discussed in this dissertation. The optimizations of undoped ZnO thin film growth using molecular-beam epitaxy (MBE) are discussed. The effect of the oxygen ECR plasma power on the growth rate, structural, electrical, and optical properties of the ZnO thin films were studied. It was found that larger ECR power leads to higher growth rate, better crystallinity, lower electron carrier concentration, larger resistivity, and smaller density of non-radiative luminescence centers in the ZnO thin films. Low-temperature photoluminescence (PL) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8 x 1018 to 1.8 x 1020 cm-3, the dominant PL line at 9 K changes from I1 (3.368--3.371 eV), to IDA (3.317--3.321 eV), and finally to I8 (3.359 eV). The dominance of I1, due to ionized-donor bound excitons, is unexpected in n-type samples, but is shown to be consistent with the temperature-dependent Hall fitting results. We also show that IDA has characteristics of a donor-acceptor-pair transition, and use a detailed, quantitative analysis to argue that it arises from GaZn donors paired with Zn-vacancy (VZn) acceptors. In this analysis, the GaZn0/+ energy is well-known from two-electron satellite transitions, and the VZn0/- energy is taken from a recent theoretical calculation. Typical behaviors of Sb-doped p-type ZnO are presented. The Sb doping mechanisms and preference in ZnO are discussed. Diluted magnetic semiconducting ZnO:Co thin films with above room-temperature TC were prepared. Transmission electron microscopy and x-ray diffraction studies indicate the ZnO:Co thin films are free of secondary phases. The magnetization of the ZnO:Co thin films shows a free electron carrier concentration dependence, which increases dramatically when the free electron carrier concentration exceeds ˜1019 cm -3, indicating a carrier-mediated mechanism for

  11. Electrodeposited CuInSe{sub 2} thin film devices

    SciTech Connect

    Raffaelle, R.P.; Mantovani, J.G.; Friedfeld, R.B.; Bailey, S.G.; Hubbard, S.M.

    1997-12-31

    The authors have been investigating the electrochemical deposition of thin films and junctions based on copper indium diselenide (CIS). CIS is considered to be one of the best absorber materials for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a simple and inexpensive method for producing thin-film CIS. The authors have produced both p and n type CIS thin films, as well as a CIS pn junction electrodeposited from a single aqueous solution. Optical bandgaps were determined for these thin films using transmission spectroscopy. Current versus voltage characteristics were measured for Schottky barriers on the individual films and for the pn junction.

  12. Method of transferring a thin crystalline semiconductor layer

    DOEpatents

    Nastasi, Michael A.; Shao, Lin; Theodore, N. David

    2006-12-26

    A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

  13. Thin film bismuth iron oxides useful for piezoelectric devices

    DOEpatents

    Zeches, Robert J.; Martin, Lane W.; Ramesh, Ramamoorthy

    2016-05-31

    The present invention provides for a composition comprising a thin film of BiFeO.sub.3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO.sub.3 thin film, and a second electrode in contact with the BiFeO.sub.3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

  14. Stability of patterns on thin curved surfaces.

    PubMed

    Nampoothiri, Sankaran

    2016-08-01

    We consider reaction-diffusion equations on a thin curved surface and obtain a set of effective reaction-diffusion (R-D) equations to O(ε^{2}), where ε is the surface thickness. We observe that the R-D systems on these curved surfaces can have space-dependent reaction kinetics. Further, we use linear stability analysis to study the Schnakenberg model on spherical and cylindrical geometries. The dependence of the steady state on the thickness is determined for both cases, and we find that a change in the thickness can stabilize the unstable modes, and vice versa. The combined effect of thickness and curvature can play an important role in the rearrangement of spatial patterns on thin curved surfaces. PMID:27627331

  15. Membrane-thinning effect of curcumin.

    PubMed

    Hung, Wei-Chin; Chen, Fang-Yu; Lee, Chang-Chun; Sun, Yen; Lee, Ming-Tao; Huang, Huey W

    2008-06-01

    Interaction of curcumin with lipid bilayers is not well understood. A recent experiment showed that curcumin significantly affected the single-channel lifetime of gramicidin in a 1,2-dioleoyl-sn-glycero-3-phosphocholine (DOPC) bilayer without affecting its single-channel conductance. We performed two experiments to understand this result. By isothermal titration calorimetry, we measured the partition coefficient of curcumin binding to DOPC bilayers. By x-ray lamellar diffraction, we measured the thickness change of DOPC bilayers as a function of the curcumin/lipid ratio. A nonlinear membrane-thinning effect by curcumin was discovered. The gramicidin data were qualitatively interpreted by the combination of isothermal titration calorimetry and x-ray results. We show that not only does curcumin thin the lipid bilayer, it might also weaken its elasticity moduli. The result implies that curcumin may affect the function of membrane proteins by modifying the properties of the host membrane.

  16. Method for casting thin metal objects

    DOEpatents

    Pehrson, Brandon P; Moore, Alan F

    2015-04-14

    Provided herein are various embodiments of systems for casting thin metal plates and sheets. Typical embodiments include layers of mold cavities that are oriented vertically for casting the metal plates. In some embodiments, the mold cavities include a beveled edge such that the plates that are cast have a beveled edge. In some embodiments, the mold cavities are filled with a molten metal through an open horizontal edge of the cavity. In some embodiments, the mold cavities are filled through one or more vertical feed orifices. Further disclosed are methods for forming a thin cast metal plate or sheet where the thickness of the cast part is in a range from 0.005 inches to 0.2 inches, and the surface area of the cast part is in a range from 16 square inches to 144 square inches.

  17. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting ``next-generation`` options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called ``government/industry partnerships``) that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  18. Polycrystalline thin films FY 1992 project report

    SciTech Connect

    Zweibel, K.

    1993-01-01

    This report summarizes the activities and results of the Polycrystalline Thin Film Project during FY 1992. The purpose of the DOE/NREL PV (photovoltaic) Program is to facilitate the development of PV that can be used on a large enough scale to produce a significant amount of energy in the US and worldwide. The PV technologies under the Polycrystalline Thin Film project are among the most exciting next-generation'' options for achieving this goal. Over the last 15 years, cell-level progress has been steady, with laboratory cell efficiencies reaching levels of 15 to 16%. This progress, combined with potentially inexpensive manufacturing methods, has attracted significant commercial interest from US and international companies. The NREL/DOE program is designed to support the efforts of US companies through cost-shared subcontracts (called government/industry partnerships'') that we manage and fund and through collaborative technology development work among industry, universities, and our laboratory.

  19. Stability of patterns on thin curved surfaces

    NASA Astrophysics Data System (ADS)

    Nampoothiri, Sankaran

    2016-08-01

    We consider reaction-diffusion equations on a thin curved surface and obtain a set of effective reaction-diffusion (R-D) equations to O (ɛ2) , where ɛ is the surface thickness. We observe that the R-D systems on these curved surfaces can have space-dependent reaction kinetics. Further, we use linear stability analysis to study the Schnakenberg model on spherical and cylindrical geometries. The dependence of the steady state on the thickness is determined for both cases, and we find that a change in the thickness can stabilize the unstable modes, and vice versa. The combined effect of thickness and curvature can play an important role in the rearrangement of spatial patterns on thin curved surfaces.

  20. Multiferroic oxide thin films and heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Chengliang; Hu, Weijin; Tian, Yufeng; Wu, Tom

    2015-06-01

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  1. Thin cloud removal from single satellite images.

    PubMed

    Liu, Jun; Wang, Xing; Chen, Min; Liu, Shuguang; Zhou, Xiran; Shao, Zhenfeng; Liu, Ping

    2014-01-13

    A novel method for removing thin clouds from single satellite image is presented based on a cloud physical model. Given the unevenness of clouds, the cloud background is first estimated in the frequency domain and an adjustment function is used to suppress the areas with greater gray values and enhance the dark objects. An image, mainly influenced by transmission, is obtained by subtracting the cloud background from the original cloudy image. The final image with proper color and contrast is obtained by decreasing the effect of transmission using the proposed max-min radiation correction approach and an adaptive brightness factor. The results indicate that the proposed method can more effectively remove thin clouds, improve contrast, restore color information, and retain detailed information compared with the commonly used image enhancement and haze removal methods.

  2. Thin film photovoltaic panel and method

    DOEpatents

    Ackerman, Bruce; Albright, Scot P.; Jordan, John F.

    1991-06-11

    A thin film photovoltaic panel includes a backcap for protecting the active components of the photovoltaic cells from adverse environmental elements. A spacing between the backcap and a top electrode layer is preferably filled with a desiccant to further reduce water vapor contamination of the environment surrounding the photovoltaic cells. The contamination of the spacing between the backcap and the cells may be further reduced by passing a selected gas through the spacing subsequent to sealing the backcap to the base of the photovoltaic panels, and once purged this spacing may be filled with an inert gas. The techniques of the present invention are preferably applied to thin film photovoltaic panels each formed from a plurality of photovoltaic cells arranged on a vitreous substrate. The stability of photovoltaic conversion efficiency remains relatively high during the life of the photovoltaic panel, and the cost of manufacturing highly efficient panels with such improved stability is significantly reduced.

  3. Rechargeable thin-film electrochemical generator

    DOEpatents

    Rouillard, Roger; Domroese, Michael K.; Hoffman, Joseph A.; Lindeman, David D.; Noel, Joseph-Robert-Gaetan; Radewald, Vern E.; Ranger, Michel; Sudano, Anthony; Trice, Jennifer L.; Turgeon, Thomas A.

    2000-09-15

    An improved electrochemical generator is disclosed. The electrochemical generator includes a thin-film electrochemical cell which is maintained in a state of compression through use of an internal or an external pressure apparatus. A thermal conductor, which is connected to at least one of the positive or negative contacts of the cell, conducts current into and out of the cell and also conducts thermal energy between the cell and thermally conductive, electrically resistive material disposed on a vessel wall adjacent the conductor. The thermally conductive, electrically resistive material may include an anodized coating or a thin sheet of a plastic, mineral-based material or conductive polymer material. The thermal conductor is fabricated to include a resilient portion which expands and contracts to maintain mechanical contact between the cell and the thermally conductive material in the presence of relative movement between the cell and the wall structure. The electrochemical generator may be disposed in a hermetically sealed housing.

  4. Mesoscopically structured nanocrystalline metal oxide thin films

    NASA Astrophysics Data System (ADS)

    Carretero-Genevrier, Adrian; Drisko, Glenna L.; Grosso, David; Boissiere, Cédric; Sanchez, Clement

    2014-11-01

    This review describes the main successful strategies that are used to grow mesostructured nanocrystalline metal oxide and SiO2 films via deposition of sol-gel derived solutions. In addition to the typical physicochemical forces to be considered during crystallization, mesoporous thin films are also affected by the substrate-film relationship and the mesostructure. The substrate can influence the crystallization temperature and the obtained crystallographic orientation due to the interfacial energies and the lattice mismatch. The mesostructure can influence the crystallite orientation, and affects nucleation and growth behavior due to the wall thickness and pore curvature. Three main methods are presented and discussed: templated mesoporosity followed by thermally induced crystallization, mesostructuration of already crystallized metal oxide nanobuilding units and substrate-directed crystallization with an emphasis on very recent results concerning epitaxially grown piezoelectric structured α-quartz films via crystallization of amorphous structured SiO2 thin films.

  5. Induced electronic anisotropy in bismuth thin films

    SciTech Connect

    Liao, Albert D.; Yao, Mengliang; Opeil, Cyril; Katmis, Ferhat; Moodera, Jagadeesh S.; Li, Mingda; Tang, Shuang; Dresselhaus, Mildred S.

    2014-08-11

    We use magneto-resistance measurements to investigate the effect of texturing in polycrystalline bismuth thin films. Electrical current in bismuth films with texturing such that all grains are oriented with the trigonal axis normal to the film plane is found to flow in an isotropic manner. By contrast, bismuth films with no texture such that not all grains have the same crystallographic orientation exhibit anisotropic current flow, giving rise to preferential current flow pathways in each grain depending on its orientation. Extraction of the mobility and the phase coherence length in both types of films indicates that carrier scattering is not responsible for the observed anisotropic conduction. Evidence from control experiments on antimony thin films suggests that the anisotropy is a result of bismuth's large electron effective mass anisotropy.

  6. Membrane-Thinning Effect of Curcumin

    PubMed Central

    Hung, Wei-Chin; Chen, Fang-Yu; Lee, Chang-Chun; Sun, Yen; Lee, Ming-Tao; Huang, Huey W.

    2008-01-01

    Interaction of curcumin with lipid bilayers is not well understood. A recent experiment showed that curcumin significantly affected the single-channel lifetime of gramicidin in a 1,2-dioleoyl-sn-glycero-3-phosphocholine (DOPC) bilayer without affecting its single-channel conductance. We performed two experiments to understand this result. By isothermal titration calorimetry, we measured the partition coefficient of curcumin binding to DOPC bilayers. By x-ray lamellar diffraction, we measured the thickness change of DOPC bilayers as a function of the curcumin/lipid ratio. A nonlinear membrane-thinning effect by curcumin was discovered. The gramicidin data were qualitatively interpreted by the combination of isothermal titration calorimetry and x-ray results. We show that not only does curcumin thin the lipid bilayer, it might also weaken its elasticity moduli. The result implies that curcumin may affect the function of membrane proteins by modifying the properties of the host membrane. PMID:18310254

  7. Generalized Ellipsometry on Ferromagnetic Sculptured Thin Films.

    NASA Astrophysics Data System (ADS)

    Schmidt, Daniel; Hofmann, Tino; Mok, Kah; Schmidt, Heidemarie; Skomski, Ralf; Schubert, Eva; Schubert, Mathias

    2011-03-01

    We present and discuss generalized ellipsometry and generalized vector-magneto-optic ellipsometry investigations on cobalt nanostructured thin films with slanted, highly-spatially coherent, columnar arrangement. The samples were prepared by glancing angle deposition. The thin films are highly transparent and reveal strong form-induced birefringence. We observe giant Kerr rotation in the visible spectral region, tunable by choice of the nanostructure geometry. Spatial magnetization orientation hysteresis and magnetization magnitude hysteresis properties are studied using a 3-dimensional Helmholtz coil arrangement allowing for arbitrary magnetic field direction at the sample position for field strengths up to 0.4 Tesla. Analysis of data obtained within this novel vector-magneto-optic setup reveals magnetization anisotropy of the Co slanted nanocolumns supported by mean-field theory modeling.

  8. Techniques for Connecting Superconducting Thin Films

    NASA Technical Reports Server (NTRS)

    Mester, John; Gwo, Dz-Hung

    2006-01-01

    Several improved techniques for connecting superconducting thin films on substrates have been developed. The techniques afford some versatility for tailoring the electronic and mechanical characteristics of junctions between superconductors in experimental electronic devices. The techniques are particularly useful for making superconducting or alternatively normally conductive junctions (e.g., Josephson junctions) between patterned superconducting thin films in order to exploit electron quantum-tunneling effects. The techniques are applicable to both low-Tc and high-Tc superconductors (where Tc represents the superconducting- transition temperature of a given material), offering different advantages for each. Most low-Tc superconductors are metallic, and heretofore, connections among them have been made by spot welding. Most high-Tc superconductors are nonmetallic and cannot be spot welded. These techniques offer alternatives to spot welding of most low-Tc superconductors and additional solutions to problems of connecting most high-Tc superconductors.

  9. Dynamics of Polymer Thin Film Mixtures

    NASA Astrophysics Data System (ADS)

    Besancon, Brian M.; Green, Peter F.; Soles, Christopher L.

    2006-03-01

    We examined the influence of film thickness and composition on the glass transition temperature (Tg) and mean square atomic displacements (MSD) of thin film mixtures of deuterated polystyrene (dPS) and tetramethyl bisphenol-A polycarbonate (TMPC) on Si/SiOx substrates using incoherent elastic neutron scattering (ICNS). The onset of dissipative motions, such as those associated with the glass transition and sub-Tg relaxations, are manifested as ``kinks'' in the curve of elastic intensity (or MSD) versus temperature. From the relevant kinks, the Tg was determined as a function of composition and of film thickness. The dependence of the Tg on film thickness exhibited qualitatively similar trends, at a given composition, as determined by the ICNS and ellipsometry measurements. However, with increasing PS content, the values of Tg measured by INS were consistently larger then those measured by ellipsometry. These results are examined in light of existing models on the thin film glass transition and component blend dynamics.

  10. Thin film strain gage development program

    NASA Technical Reports Server (NTRS)

    Grant, H. P.; Przybyszewski, J. S.; Anderson, W. L.; Claing, R. G.

    1983-01-01

    Sputtered thin-film dynamic strain gages of 2 millimeter (0.08 in) gage length and 10 micrometer (0.0004 in) thickness were fabricated on turbojet engine blades and tested in a simulated compressor environment. Four designs were developed, two for service to 600 K (600 F) and two for service to 900 K (1200 F). The program included a detailed study of guidelines for formulating strain-gage alloys to achieve superior dynamic and static gage performance. The tests included gage factor, fatigue, temperature cycling, spin to 100,000 G, and erosion. Since the installations are 30 times thinner than conventional wire strain gage installations, and any alteration of the aerodynamic, thermal, or structural performance of the blade is correspondingly reduced, dynamic strain measurement accuracy higher than that attained with conventional gages is expected. The low profile and good adherence of the thin film elements is expected to result in improved durability over conventional gage elements in engine tests.

  11. Domain switching of fatigued ferroelectric thin films

    SciTech Connect

    Tak Lim, Yun; Yeog Son, Jong E-mail: hoponpop@ulsan.ac.kr; Shin, Young-Han E-mail: hoponpop@ulsan.ac.kr

    2014-05-12

    We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.

  12. Thin-film forces in pseudoemulsion films

    SciTech Connect

    Bergeron, V.; Radke, C.J. |

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  13. Method of casting silicon into thin sheets

    DOEpatents

    Sanjurjo, Angel; Rowcliffe, David J.; Bartlett, Robert W.

    1982-10-26

    Silicon (Si) is cast into thin shapes within a flat-bottomed graphite crucible by providing a melt of molten Si along with a relatively small amount of a molten salt, preferably NaF. The Si in the resulting melt forms a spherical pool which sinks into and is wetted by the molten salt. Under these conditions the Si will not react with any graphite to form SiC. The melt in the crucible is pressed to the desired thinness with a graphite tool at which point the tool is held until the mass in the crucible has been cooled to temperatures below the Si melting point, at which point the Si shape can be removed.

  14. Thin Silicon MEMS Contact-Stress Sensor

    SciTech Connect

    Kotovsky, J; Tooker, A; Horsley, D

    2010-03-22

    This thin, MEMS contact-stress (CS) sensor continuously and accurately measures time-varying, solid interface loads in embedded systems over tens of thousands of load cycles. Unlike all other interface load sensors, the CS sensor is extremely thin (< 150 {micro}m), provides accurate, high-speed measurements, and exhibits good stability over time with no loss of calibration with load cycling. The silicon CS sensor, 5 mm{sup 2} and 65 {micro}m thick, has piezoresistive traces doped within a load-sensitive diaphragm. The novel package utilizes several layers of flexible polyimide to mechanically and electrically isolate the sensor from the environment, transmit normal applied loads to the diaphragm, and maintain uniform thickness. The CS sensors have a highly linear output in the load range tested (0-2.4 MPa) with an average accuracy of {+-} 1.5%.

  15. Residual activation of thin accelerator components

    SciTech Connect

    Mokhov, N.V.; Rakhno, E.I.; Rakhno, I.L.; /Fermilab

    2006-05-01

    A method to calculate residual activation of thin accelerator components is presented. A model for residual dose estimation for thick objects made of arbitrary composite materials for arbitrary irradiation and cooling times is employed in this study. A scaling procedure is described to apply the model to thin objects with linear dimensions less than a fraction of a nuclear interaction length. The scaling has been performed for various materials and corresponding factors have been determined for objects of certain shapes (slab, solid and hollow cylinder) which are important from practical standpoint and can serve as models for beam pipes, magnets and collimators. Both contact residual dose and dose attenuation in air outside the objects were considered. A comparison between calculations and measurements performed at the Fermi National Accelerator Laboratory using a 120 GeV proton beam is presented.

  16. Photonic band gap in thin wire metamaterials.

    PubMed

    Hock, Kai Meng

    2008-03-01

    We investigate the band structure of a class of photonic crystals made from only thin wires. Using a different method, we demonstrate that a complete photonic band gap is possible for such materials. Band gap materials normally consist of space filling dielectric or metal, whereas thin wires occupy a very small fraction of the volume. We show that this is related to the large increase in scattering at the Brillouin zone boundary. The method we developed brings together the calculation techniques in three different fields. The first is the calculation of scattering from periodic, tilted antennas, which we improve upon. The second is the standard technique for frequency selective surface design. The third is obtained directly from low energy electron diffraction theory. Good agreements with experiments for left handed materials, negative materials, and frequency selective surfaces are demonstrated.

  17. Electrostatic Discharge Effects on Thin Film Resistors

    NASA Technical Reports Server (NTRS)

    Sampson, Michael J.; Hull, Scott M.

    1999-01-01

    Recently, open circuit failures of individual elements in thin film resistor networks have been attributed to electrostatic discharge (ESD) effects. This paper will discuss the investigation that came to this conclusion and subsequent experimentation intended to characterize design factors that affect the sensitivity of resistor elements to ESD. The ESD testing was performed using the standard human body model simulation. Some of the design elements to be evaluated were: trace width, trace length (and thus width to length ratio), specific resistivity of the trace (ohms per square) and resistance value. However, once the experiments were in progress, it was realized that the ESD sensitivity of most of the complex patterns under evaluation was determined by other design and process factors such as trace shape and termination pad spacing. This paper includes pictorial examples of representative ESD failure sites, and provides some options for designing thin film resistors that are ESD resistant. The risks of ESD damage are assessed and handling precautions suggested.

  18. EBSD analysis of electroplated magnetite thin films

    NASA Astrophysics Data System (ADS)

    Koblischka-Veneva, A.; Koblischka, M. R.; Teng, C. L.; Ryan, M. P.; Hartmann, U.; Mücklich, F.

    2010-05-01

    By means of electron backscatter diffraction (EBSD), we analyse the crystallographic orientation of electroplated magnetite thin films on Si/copper substrates. Varying the voltage during the electroplating procedure, the resulting surface properties are differing considerably. While a high voltage produces larger but individual grains on the surface, the surfaces become smoother on decreasing voltage. Good quality Kikuchi patterns could be obtained from all samples; even on individual grains, where the surface and the edges could be measured. The spatial resolution of the EBSD measurement could be increased to about 10 nm; thus enabling a detailed analysis of single magnetite grains. The thin film samples are polycrystalline and do not exhibit a preferred orientation. EBSD reveals that the grain size changes depending on the processing conditions, while the detected misorientation angles stay similar.

  19. Multiferroic oxide thin films and heterostructures

    SciTech Connect

    Lu, Chengliang E-mail: Tao.Wu@kaust.edu.sa; Hu, Weijin; Wu, Tom E-mail: Tao.Wu@kaust.edu.sa; Tian, Yufeng

    2015-06-15

    Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

  20. Thin nearly wireless adaptive optical device

    NASA Technical Reports Server (NTRS)

    Knowles, Gareth J. (Inventor); Hughes, Eli (Inventor)

    2009-01-01

    A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

  1. Thin, nearly wireless adaptive optical device

    NASA Technical Reports Server (NTRS)

    Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

    2008-01-01

    A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

  2. Thin, nearly wireless adaptive optical device

    NASA Technical Reports Server (NTRS)

    Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

    2007-01-01

    A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

  3. Impedance matched thin metamaterials make metals absorbing

    PubMed Central

    Mattiucci, N.; Bloemer, M. J.; Aközbek, N.; D'Aguanno, G.

    2013-01-01

    Metals are generally considered good reflectors over the entire electromagnetic spectrum up to their plasma frequency. Here we demonstrate an approach to tailor their absorbing characteristics based on the effective metamaterial properties of thin, periodic metallo-dielectric multilayers by exploiting a broadband, inherently non-resonant, surface impedance matching mechanism. Based on this mechanism, we design, fabricate and test omnidirectional, thin (<1 micron), polarization independent, extremely efficient absorbers (in principle being capable to reach A > 99%) over a frequency range spanning from the UV to the IR. Our approach opens new venues to design cost effective materials for many applications such as thermo-photovoltaic energy conversion devices, light harvesting for solar cells, flat panel display, infrared detectors, stray light reduction, stealth and others. PMID:24220284

  4. MISSE 5 Thin Films Space Exposure Experiment

    NASA Technical Reports Server (NTRS)

    Harvey, Gale A.; Kinard, William H.; Jones, James L.

    2007-01-01

    The Materials International Space Station Experiment (MISSE) is a set of space exposure experiments using the International Space Station (ISS) as the flight platform. MISSE 5 is a co-operative endeavor by NASA-LaRC, United Stated Naval Academy, Naval Center for Space Technology (NCST), NASA-GRC, NASA-MSFC, Boeing, AZ Technology, MURE, and Team Cooperative. The primary experiment is performance measurement and monitoring of high performance solar cells for U.S. Navy research and development. A secondary experiment is the telemetry of this data to ground stations. A third experiment is the measurement of low-Earth-orbit (LEO) low-Sun-exposure space effects on thin film materials. Thin films can provide extremely efficacious thermal control, designation, and propulsion functions in space to name a few applications. Solar ultraviolet radiation and atomic oxygen are major degradation mechanisms in LEO. This paper is an engineering report of the MISSE 5 thm films 13 months space exposure experiment.

  5. Substrate heater for thin film deposition

    DOEpatents

    Foltyn, Steve R.

    1996-01-01

    A substrate heater for thin film deposition of metallic oxides upon a target substrate configured as a disk including means for supporting in a predetermined location a target substrate configured as a disk, means for rotating the target substrate within the support means, means for heating the target substrate within the support means, the heating means about the support means and including a pair of heating elements with one heater element situated on each side of the predetermined location for the target substrate, with one heater element defining an opening through which desired coating material can enter for thin film deposition and with the heating means including an opening slot through which the target substrate can be entered into the support means, and, optionally a means for thermal shielding of the heating means from surrounding environment is disclosed.

  6. Impedance matched thin metamaterials make metals absorbing.

    PubMed

    Mattiucci, N; Bloemer, M J; Aközbek, N; D'Aguanno, G

    2013-01-01

    Metals are generally considered good reflectors over the entire electromagnetic spectrum up to their plasma frequency. Here we demonstrate an approach to tailor their absorbing characteristics based on the effective metamaterial properties of thin, periodic metallo-dielectric multilayers by exploiting a broadband, inherently non-resonant, surface impedance matching mechanism. Based on this mechanism, we design, fabricate and test omnidirectional, thin (<1 micron), polarization independent, extremely efficient absorbers (in principle being capable to reach A > 99%) over a frequency range spanning from the UV to the IR. Our approach opens new venues to design cost effective materials for many applications such as thermo-photovoltaic energy conversion devices, light harvesting for solar cells, flat panel display, infrared detectors, stray light reduction, stealth and others. PMID:24220284

  7. Electrochemical Analysis of Conducting Polymer Thin Films

    PubMed Central

    Vyas, Ritesh N.; Wang, Bin

    2010-01-01

    Polyelectrolyte multilayers built via the layer-by-layer (LbL) method has been one of the most promising systems in the field of materials science. Layered structures can be constructed by the adsorption of various polyelectrolyte species onto the surface of a solid or liquid material by means of electrostatic interaction. The thickness of the adsorbed layers can be tuned precisely in the nanometer range. Stable, semiconducting thin films are interesting research subjects. We use a conducting polymer, poly(p-phenylene vinylene) (PPV), in the preparation of a stable thin film via the LbL method. Cyclic voltammetry and electrochemical impedance spectroscopy have been used to characterize the ionic conductivity of the PPV multilayer films. The ionic conductivity of the films has been found to be dependent on the polymerization temperature. The film conductivity can be fitted to a modified Randle’s circuit. The circuit equivalent calculations are performed to provide the diffusion coefficient values. PMID:20480052

  8. Adhesion and friction of thin metal films

    NASA Technical Reports Server (NTRS)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  9. Impedance matched thin metamaterials make metals absorbing.

    PubMed

    Mattiucci, N; Bloemer, M J; Aközbek, N; D'Aguanno, G

    2013-11-13

    Metals are generally considered good reflectors over the entire electromagnetic spectrum up to their plasma frequency. Here we demonstrate an approach to tailor their absorbing characteristics based on the effective metamaterial properties of thin, periodic metallo-dielectric multilayers by exploiting a broadband, inherently non-resonant, surface impedance matching mechanism. Based on this mechanism, we design, fabricate and test omnidirectional, thin (<1 micron), polarization independent, extremely efficient absorbers (in principle being capable to reach A > 99%) over a frequency range spanning from the UV to the IR. Our approach opens new venues to design cost effective materials for many applications such as thermo-photovoltaic energy conversion devices, light harvesting for solar cells, flat panel display, infrared detectors, stray light reduction, stealth and others.

  10. Spline Approximation of Thin Shell Dynamics

    NASA Technical Reports Server (NTRS)

    delRosario, R. C. H.; Smith, R. C.

    1996-01-01

    A spline-based method for approximating thin shell dynamics is presented here. While the method is developed in the context of the Donnell-Mushtari thin shell equations, it can be easily extended to the Byrne-Flugge-Lur'ye equations or other models for shells of revolution as warranted by applications. The primary requirements for the method include accuracy, flexibility and efficiency in smart material applications. To accomplish this, the method was designed to be flexible with regard to boundary conditions, material nonhomogeneities due to sensors and actuators, and inputs from smart material actuators such as piezoceramic patches. The accuracy of the method was also of primary concern, both to guarantee full resolution of structural dynamics and to facilitate the development of PDE-based controllers which ultimately require real-time implementation. Several numerical examples provide initial evidence demonstrating the efficacy of the method.

  11. Microstructure Related Properties of Optical Thin Films.

    NASA Astrophysics Data System (ADS)

    Wharton, John James, Jr.

    Both the optical and physical properties of thin film optical interference coatings depend upon the microstructure of the deposited films. This microstructure is strongly columnar with voids between the columns. Computer simulations of the film growth process indicate that the two most important factors responsible for this columnar growth are a limited mobility of the condensing molecules and self-shadowing by molecules already deposited. During the vacuum deposition of thin films, the microstructure can be influenced by many parameters, such as substrate temperature and vacuum pressure. By controlling these parameters and introducing additional ones, thin film coatings can be improved. In this research, ultraviolet irradiation and ion bombardment were examined as additional parameters. Past studies have shown that post-deposition ultraviolet irradiation can be used to relieve stress and reduce absorption in the far ultraviolet of silicon dioxide films. Ion bombardment has been used to reduce stress, improve packing density, and increase resistance to moisture penetration. Three refractory oxide materials commonly used in thin film coatings were studied; they are silicon dioxide, titanium dioxide, and zirconium dioxide. Both single-layer films and narrowband filters made of these materials were examined. A 1000-watt mercury-xenon lamp was used to provide ultraviolet irradiation. An inverted magnetron ion source was used to produce argon and oxygen ions. Ultraviolet irradiation was found to reduce the absorption and slightly increase the index of refraction in zirconium oxide films. X-ray diffraction analysis revealed that ultraviolet irradiation caused titanium oxide films to become more amorphous; their absorption in the ultraviolet was slightly reduced. No changes were noted in film durability. Ion bombardment enhanced the tetragonal (lll) peak of zirconium oxide but increased the absorption of both zirconium oxide and titanium oxide films. The titanium oxide

  12. Packaging material for thin film lithium batteries

    DOEpatents

    Bates, John B.; Dudney, Nancy J.; Weatherspoon, Kim A.

    1996-01-01

    A thin film battery including components which are capable of reacting upon exposure to air and water vapor incorporates a packaging system which provides a barrier against the penetration of air and water vapor. The packaging system includes a protective sheath overlying and coating the battery components and can be comprised of an overlayer including metal, ceramic, a ceramic-metal combination, a parylene-metal combination, a parylene-ceramic combination or a parylene-metal-ceramic combination.

  13. Perovskite thin films via atomic layer deposition.

    PubMed

    Sutherland, Brandon R; Hoogland, Sjoerd; Adachi, Michael M; Kanjanaboos, Pongsakorn; Wong, Chris T O; McDowell, Jeffrey J; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J; Sargent, Edward H

    2015-01-01

    A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3 NH3 PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm(-1) .

  14. Cellulose triacetate, thin film dielectric capacitor

    NASA Technical Reports Server (NTRS)

    Yen, Shiao-Ping S. (Inventor); Jow, T. Richard (Inventor)

    1993-01-01

    Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.

  15. Annealed CVD molybdenum thin film surface

    DOEpatents

    Carver, Gary E.; Seraphin, Bernhard O.

    1984-01-01

    Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

  16. Thin-shell wormholes: Linearization stability

    SciTech Connect

    Poisson, E.; Visser, M.

    1995-12-15

    The class of spherically symmetric thin-shell wormholes provides a particularly elegant collection of exemplars for the study of traversable Lorentzian wormholes. In the present paper we consider linearized (spherically symmetric) perturbations around some assumed static solution of the Einstein field equations. This permits us to relate stability issues to the (linearized) equation of state of the exotic matter which is located at the wormhole throat. {copyright} 1995 The American Physical Society.

  17. Flexible thin metal film thermal sensing system

    NASA Technical Reports Server (NTRS)

    Thomsen, Donald L. (Inventor)

    2010-01-01

    A flexible thin metal film thermal sensing system is provided. A self-metallized polymeric film has a polymeric film region and a metal surface disposed thereon. A layer of electrically-conductive metal is deposited directly onto the self-metallized polymeric film's metal surface. Coupled to at least one of the metal surface and the layer of electrically-conductive metal is a device/system for measuring an electrical characteristic associated therewith as an indication of temperature.

  18. Thin-film optical shutter. Final report

    SciTech Connect

    Matlow, S.L.

    1981-02-01

    A specific embodiment of macroconjugated macromolecules, the poly (p-phenylene)'s, has been chosen as the one most likely to meet all of the requirements of the Thin Film Optical Shutter project (TFOS). The reason for this choice is included. In order to be able to make meaningful calculations of the thermodynamic and optical properties of the poly (p-phenylene)'s a new quantum mechanical method was developed - Equilibrium Bond Length (EBL) Theory. Some results of EBL Theory are included.

  19. High speed thin plate fatigue crack monitor

    NASA Technical Reports Server (NTRS)

    Wincheski, Buzz A. (Inventor); Heyman, Joseph S. (Inventor); Namkung, Min (Inventor); Fulton, James P. (Inventor)

    1996-01-01

    A device and method are provided which non-destructively detect crack length and crack geometry in thin metallic plates. A non-contacting vibration apparatus produces resonant vibrations without introducing extraneous noise. Resulting resonant vibration shifts in cracked plates are correlated to known crack length in plates with similar resonant vibration shifts. In addition, acoustic emissions of cracks at resonance frequencies are correlated to acoustic emissions from known crack geometries.

  20. Large-area thin-film modules

    NASA Technical Reports Server (NTRS)

    Tyan, Y. S.; Perez-Albuerne, E. A.

    1985-01-01

    The low cost potential of thin film solar cells can only be fully realized if large area modules can be made economically with good production yields. This paper deals with two of the critical challenges. A scheme is presented which allows the simple, economical realization of the long recognized, preferred module structure of monolithic integration. Another scheme reduces the impact of shorting defects and, as a result, increases the production yields. Analytical results demonstrating the utilization and advantages of such schemes are discussed.