High current densities above 100 K in the high-temperature superconductor HgBa2CaCu2O6+δ

NASA Astrophysics Data System (ADS)

Krusin-Elbaum, L.; Tsuei, C. C.; Gupta, A.

1995-02-01

THE recent discovery1,2 of a family of mercury-based copper oxide superconductors having transition temperatures1-3 above 130 K is of considerable technological interest. But the viability of high-temperature superconductors for many applications will ultimately depend on the size of the current density, Jc, that they are able to support, not only at high temperatures, but also in high magnetic fields. For the cuprate superconductors, and in particular for Hg-based materials, the combination of high transition temperature1-3 and large mass anisotropy implies that the transport properties will be intrinsically limited by large thermal fluctuations and short superconducting coherence lengths4. Here we report that high-quality c-axis-oriented epitaxial films of the compound HgBa2CaCu6O6+δ (Hg-1212; ref. 5) can support large in-plane current densities at temperatures higher than has been achieved for other superconductors. In low magnetic fields oriented normal to the film surface, we find Jc>~107 A cm-2 at 5 K and Jc~ 105 A cm-2 at 110 K, at least an order of magnitude larger than for Bi- or Tl-based films6-11. For in-plane magnetic fields, the critical current (~108 A cm-2) is close to the theoretical limit even at high fields, indicative of strong intrinsic pinning in this compound.

Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern

NASA Astrophysics Data System (ADS)

Han, Nam; Jung, Eunjin; Han, Min; Deul Ryu, Beo; Bok Ko, Kang; Park, Young Jae; Cuong, TranViet; Cho, Jaehee; Kim, Hyunsoo; Hong, Chang-Hee

2015-07-01

Thermal management has become a crucial area for further development of high-power light-emitting didoes (LEDs) due to the high operating current densities that are required and result in additional joule heating. This increased joule heating negatively affects the performance of the LEDs since it greatly decreases both the optical performance and the lifetime. To circumvent this problem, a reduced graphene oxide (rGO) layer can be inserted to act as a heat spreader. In this study, current-voltage and light-output-current measurements are systematically performed at different temperatures from 30 to 190 °C to investigate the effect that the embedded rGO pattern has on the device performance. At a high temperature and high operating current, the junction temperature (Tj) is 23% lower and the external quantum efficiency (EQE) is 24% higher for the rGO embedded LEDs relative to those of conventional LEDs. In addition, the thermal activation energy of the rGO embedded LEDs exhibits a 30% enhancement as a function of the temperature at a bias of  -5 V. This indicates that the rGO pattern plays an essential role in decreasing the junction temperature and results in a favorable performance in terms of the temperature of the high power GaN-based LED junction.

Non-equilibrium thermionic electron emission for metals at high temperatures

NASA Astrophysics Data System (ADS)

Domenech-Garret, J. L.; Tierno, S. P.; Conde, L.

2015-08-01

Stationary thermionic electron emission currents from heated metals are compared against an analytical expression derived using a non-equilibrium quantum kappa energy distribution for the electrons. The latter depends on the temperature decreasing parameter κ ( T ) , which decreases with increasing temperature and can be estimated from raw experimental data and characterizes the departure of the electron energy spectrum from equilibrium Fermi-Dirac statistics. The calculations accurately predict the measured thermionic emission currents for both high and moderate temperature ranges. The Richardson-Dushman law governs electron emission for large values of kappa or equivalently, moderate metal temperatures. The high energy tail in the electron energy distribution function that develops at higher temperatures or lower kappa values increases the emission currents well over the predictions of the classical expression. This also permits the quantitative estimation of the departure of the metal electrons from the equilibrium Fermi-Dirac statistics.

Critical current measurements of high-temperature superconducting short samples at a wide range of temperatures and magnetic fields.

PubMed

Ma, Hongjun; Liu, Huajun; Liu, Fang; Zhang, Huahui; Ci, Lu; Shi, Yi; Lei, Lei

2018-01-01

High-Temperature Superconductors (HTS) are potential materials for high-field magnets, low-loss transmission cables, and Superconducting Magnetic Energy Storage (SMES) due to their high upper critical magnetic field (H c2 ) and critical temperature (T c ). The critical current (I c ) of HTS, which is one of the most important parameters for superconductor application, depends strongly on the magnetic fields and temperatures. A new I c measurement system that can carry out accurate I c measurement for HTS short samples with various temperatures (4.2-80 K), magnetic fields (0-14 T), and angles of the magnetic field (0°-90°) has been developed. The I c measurement system mainly consists of a measurement holder, temperature-control system, background magnet, test cryostat, data acquisition system, and DC power supply. The accuracy of temperature control is better than ±0.1 K over the 20-80 K range and ±0.05 K when measured below 20 K. The maximum current is over 1000 A with a measurement uncertainty of 1%. The system had been successfully used for YBa 2 Cu 3 O 7-x (YBCO) tapes I c determination with different temperatures and magnetic fields.

Critical current measurements of high-temperature superconducting short samples at a wide range of temperatures and magnetic fields

NASA Astrophysics Data System (ADS)

Ma, Hongjun; Liu, Huajun; Liu, Fang; Zhang, Huahui; Ci, Lu; Shi, Yi; Lei, Lei

2018-01-01

High-Temperature Superconductors (HTS) are potential materials for high-field magnets, low-loss transmission cables, and Superconducting Magnetic Energy Storage (SMES) due to their high upper critical magnetic field (Hc2) and critical temperature (Tc). The critical current (Ic) of HTS, which is one of the most important parameters for superconductor application, depends strongly on the magnetic fields and temperatures. A new Ic measurement system that can carry out accurate Ic measurement for HTS short samples with various temperatures (4.2-80 K), magnetic fields (0-14 T), and angles of the magnetic field (0°-90°) has been developed. The Ic measurement system mainly consists of a measurement holder, temperature-control system, background magnet, test cryostat, data acquisition system, and DC power supply. The accuracy of temperature control is better than ±0.1 K over the 20-80 K range and ±0.05 K when measured below 20 K. The maximum current is over 1000 A with a measurement uncertainty of 1%. The system had been successfully used for YBa2Cu3O7-x(YBCO) tapes Ic determination with different temperatures and magnetic fields.

Effect of annealing high-dose heavy-ion irradiated high-temperature superconductor wires

NASA Astrophysics Data System (ADS)

Strickland, N. M.; Wimbush, S. C.; Kluth, P.; Mota-Santiago, P.; Ridgway, M. C.; Kennedy, J. V.; Long, N. J.

2017-10-01

Heavy-ion irradiation of high-temperature superconducting thin films has long been known to generate damage tracks of amorphized material that are of close-to-ideal dimension to effectively contribute to pinning of magnetic flux lines and thereby enhance the in-field critical current. At the same time, though, the presence of these tracks reduces the superconducting volume fraction available to transport current while the irradiation process itself generates oxygen depletion and disorder in the remaining superconducting material. We have irradiated commercially available superconducting coated conductors consisting of a thick film of (Y,Dy)Ba2Cu3O7 deposited on a buffered metal tape substrate in a continuous reel-to-reel process. Irradiation was by 185 MeV 197Au ions. A high fluence of 3 × 1011 ions/cm2 was chosen to emphasize the detrimental effects. The critical current was reduced following this irradiation, but annealing at relatively low temperatures of 200 °C and 400 °C substantially restore the critical current of the irradiated material. At high fields and high temperatures there is a net benefit of critical current compared to the untreated material.

Levitation Experiment Using a High-Temperature Superconductor Coil for a Plasma Confinement Device

NASA Astrophysics Data System (ADS)

Morikawa, Junji; Ozawa, Daisaku; Ogawa, Yuichi; Yanagi, Nagato; Hamaguchi, Sinji; Mito, Toshiyuki

2001-10-01

Levitation experiments using a high-temperature superconductor coil have been carried out. A coil with a minor radius of 42 mm was fabricated with a Bi-2223 tape conductor, and immersed in the liquid nitrogen. The coil current was induced by the field-cooling method up to the critical current value. The current decay of the coil can be accounted for by the flux flow resistance and the normal resistance at the lap joint. The high-temperature superconductor coil can be levitated for 4 min or more within an accuracy of 25-30 μm.

Temperature- and field-dependent characterization of a conductor on round core cable

NASA Astrophysics Data System (ADS)

Barth, C.; van der Laan, D. C.; Bagrets, N.; Bayer, C. M.; Weiss, K.-P.; Lange, C.

2015-06-01

The conductor on round core (CORC) cable is one of the major high temperature superconductor cable concepts combining scalability, flexibility, mechanical strength, ease of fabrication and high current density; making it a possible candidate as conductor for large, high field magnets. To simulate the boundary conditions of such magnets as well as the temperature dependence of CORC cables a 1.16 m long sample consisting of 15, 4 mm wide SuperPower REBCO tapes was characterized using the ‘FBI’ (force—field—current) superconductor test facility of the Institute for Technical Physics of the Karlsruhe Institute of Technology. In a five step investigation, the CORC cable’s performance was determined at different transverse mechanical loads, magnetic background fields and temperatures as well as its response to swift current changes. In the first step, the sample’s 77 K, self-field current was measured in a liquid nitrogen bath. In the second step, the temperature dependence was measured at self-field condition and compared with extrapolated single tape data. In the third step, the magnetic background field was repeatedly cycled while measuring the current carrying capabilities to determine the impact of transverse Lorentz forces on the CORC cable sample’s performance. In the fourth step, the sample’s current carrying capabilities were measured at different background fields (2-12 T) and surface temperatures (4.2-51.5 K). Through finite element method simulations, the surface temperatures are converted into average sample temperatures and the gained field- and temperature dependence is compared with extrapolated single tape data. In the fifth step, the response of the CORC cable sample to rapid current changes (8.3 kA s-1) was observed with a fast data acquisition system. During these tests, the sample performance remains constant, no degradation is observed. The sample’s measured current carrying capabilities correlate to those of single tapes assuming field- and temperature dependence as published by the manufacturer.

Design and realization of high voltage disconnector condition monitoring system

NASA Astrophysics Data System (ADS)

Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

2017-08-01

The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

Long-pulse production of high current negative ion beam by using actively temperature controlled plasma grid for JT-60SA negative ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, A.; Hanada, M.; Yoshida, M.

2015-04-08

The temperature control system of the large-size plasma grid has been developed to realize the long pulse production of high-current negative ions for JT-60SA. By using this prototype system for the JT-60SA ion source, 15 A negative ions has been sustained for 100 s for the first time, which is three times longer than that obtained in JT-60U. In this system, a high-temperature fluorinated fluid with a high boiling point of 270 degree Celsius is circulated in the cooling channels of the plasma grids (PG) where a cesium (Cs) coverage is formed to enhance the negative ion production. Because themore » PG temperature control had been applied to only 10% of the extraction area previously, the prototype PG with the full extraction area (110 cm × 45 cm) was developed to increase the negative ion current in this time. In the preliminary results of long pulse productions of high-current negative ions at a Cs conditioning phase, the negative ion production was gradually degraded in the last half of 100 s pulse where the temperature of an arc chamber wall was not saturated. From the spectroscopic measurements, it was found that the Cs flux released from the wall might affect to the negative ion production, which implied the wall temperature should be kept low to control the Cs flux to the PG for the long-pulse high-current production. The obtained results of long-pulse production and the PG temperature control method contributes the design of the ITER ion source.« less

Thermionic cogeneration burner design

NASA Astrophysics Data System (ADS)

Miskolczy, G.; Goodale, D.; Moffat, A. L.; Morgan, D. T.

Since thermionic converters receive heat at very high temperatures (approximately 1800 K) and reject heat at moderately high temperatures (approximately 800 K), they are useful for cogeneration applications involving high temperature processes. The electric power from thermionic converters is produced as a high amperage, low-voltage direct current. An ideal cogeneration application would be to utilize the reject heat at the collector temperature and the electricity without power conditioning. A cogeneration application in the edible oil industry fulfills both of these requirements since both direct heat and hydrogen gas are required in the hydrogenation of the oils. In this application, the low-voltage direct current would be used in a hydrogen electrolyzer.

Non-destructive Testing (NDT) of metal cracks using a high Tc rf-SQUID and eddy current method

NASA Technical Reports Server (NTRS)

Lu, D. F.; Fan, Chang-Xin; Ruan, J. Z.; Han, S. G.; Wong, K. W.; Sun, G. F.

1995-01-01

A SQUID is the most sensitive device to detect change in magnetic field. A nondestructive testing (NDT) device using high temperature SQUID's and eddy current method will be much more sensitive than those currently used eddy current systems, yet much cheaper than one with low temperature SQUID's. In this paper, we present our study of such a NDT device using a high temperature superconducting rf-SQUID as a gradiometer sensor. The result clearly demonstrates the expected sensitivity of the system, and indicates the feasibility of building a portable HTS SQUID NDT device with the help from cryocooler industry. Such a NDT device will have a significant impact on metal corrosion or crack detection technology.

Curious Case of Positive Current Collectors: Corrosion and Passivation at High Temperature.

PubMed

Sayed, Farheen N; Rodrigues, Marco-Tulio F; Kalaga, Kaushik; Gullapalli, Hemtej; Ajayan, P M

2017-12-20

In the evaluation of compatibility of different components of cell for high-energy and extreme-conditions applications, the highly focused are positive and negative electrodes and their interaction with electrolyte. However, for high-temperature application, the other components are also of significant influence and contribute toward the total health of battery. In present study, we have investigated the behavior of aluminum, the most common current collector for positive electrode materials for its electrochemical and temperature stability. For electrochemical stability, different electrolytes, organic and room temperature ionic liquids with varying Li salts (LiTFSI, LiFSI), are investigated. The combination of electrochemical and spectroscopic investigations reflects the varying mechanism of passivation at room and high temperature, as different compositions of decomposed complexes are found at the surface of metals.

Temperature dependent pinning landscapes in REBCO thin films

NASA Astrophysics Data System (ADS)

Jaroszynski, Jan; Constantinescu, Anca-Monia; Hu, Xinbo Paul

2015-03-01

The pinning landscapes of REBCO (RE=rare earth elements) thin films have been a topic of study in recent years due to, among other reasons, their high ability to introduce various phases and defects. Pinning mechanisms studies in high temperature superconductors often require detailed knowledge of critical current density as a function of magnetic field orientation as well as field strength and temperature. Since the films can achieve remarkably high critical current, challenges exist in evaluating these low temperature (down to 4.2 K) properties in high magnetic fields up to 30 T. Therefore both conventional transport, and magnetization measurements in a vibrating coil magnetometer equipped with rotating sample platform were used to complement the study. Our results clearly show an evolution of pinning from strongly correlated effects seen at high temperatures to significant contributions from dense but weak pins that thermal fluctuations render ineffective at high temperatures but which become strong at lower temperatures Support for this work is provided by the NHMFL via NSF DRM 1157490

Positive temperature coefficient thermistors based on carbon nanotube/polymer composites

PubMed Central

Zeng, You; Lu, Guixia; Wang, Han; Du, Jinhong; Ying, Zhe; Liu, Chang

2014-01-01

In order to explore availability of carbon nanotube (CNT)-based positive temperature coefficient (PTC) thermistors in practical application, we prepared carbon nanotube (CNT) filled high density polyethylene (HDPE) composites by using conventional melt-mixing methods, and investigated their PTC effects in details. The CNT-based thermistors exhibit much larger hold current and higher hold voltage, increasing by 129% in comparison with the commercial carbon black (CB) filled HDPE thermistors. Such high current-bearing and voltage-bearing capacity for the CNT/HDPE thermistors is mainly attributed to high thermal conductivity and heat dissipation of entangled CNT networks. Moreover, the CNT/HDPE thermistors exhibit rapid electrical response to applied voltages, comparable to commercial CB-based thermistors. In light of their high current-bearing capacity and quick response, the CNT-based thermistors have great potential to be used as high-performance thermistors in practical application, especially in some critical circumstances of high temperature, large applied currents, and high applied voltages. PMID:25327951

High temperature-induced abnormal suppression of sub-threshold swing and on-current degradations under hot-carrier stress in a-InGaZnO thin film transistors

NASA Astrophysics Data System (ADS)

Tsai, Ming-Yen; Chang, Ting-Chang; Chu, Ann-Kuo; Hsieh, Tien-Yu; Chen, Te-Chih; Lin, Kun-Yao; Tsai, Wu-Wei; Chiang, Wen-Jen; Yan, Jing-Yi

2013-07-01

This letter investigates the effect of temperature on hot-carrier stress-induced degradation behavior in InGaZnO thin film transistors. After hot-carrier stress at 25 °C, serious on-current and subthreshold swing degradations are observed due to trap state generation near the drain side. For identical stress performed at elevated temperatures, current degradation in the I-V transfer curve under reverse mode is gradually suppressed and the anomalous hump in the gate-to-drain capacitance-voltage curve becomes more severe. These suppressed degradations and the more severe hump can be both attributed to hole-trapping near the drain side due to high drain bias at high temperature.

Optimize out-of-core thermionic energy conversion for nuclear electric propulsion

NASA Technical Reports Server (NTRS)

Morris, J. F.

1978-01-01

Thermionic energy conversion (TEC) potentialities for nuclear electric propulsion (NEP) are examined. Considering current designs, their limitations, and risks raises critical questions about the use of TEC for NEP. Apparently a reactor cooled by hotter-than-1675 K heat pipes has good potentialities. TEC with higher temperatures and greater power densities than the currently proposed 1650 K, 5-to-6 W/sq cm version offers substantial gains. Other approaches to high-temperature electric isolation appear also promising. A high-power-density, high-temperature TEC for NEP appears, therefore, attainable. It is recommended to optimize out-of-core thermionic energy conversion for nuclear electric propulsion. Although current TEC designs for NEP seem unnecessary compared with Brayton versions, large gains are apparently possible with increased temperatures and greater power densities.

Synthesis of zinc oxide nanostructures on graphene/glass substrate by electrochemical deposition: effects of current density and temperature.

PubMed

Hambali, Nur Ashikyn; Yahaya, Hafizal; Mahmood, Mohamad Rusop; Terasako, Tomoaki; Hashim, Abdul Manaf

2014-01-01

The electrochemical growth of zinc oxide (ZnO) nanostructures on graphene on glass using zinc nitrate hexahydrate was studied. The effects of current densities and temperatures on the morphological, structural, and optical properties of the ZnO structures were studied. Vertically aligned nanorods were obtained at a low temperature of 75°C, and the diameters increased with current density. Growth temperature seems to have a strong effect in generating well-defined hexagonal-shape nanorods with a smooth top edge surface. A film-like structure was observed for high current densities above -1.0 mA/cm(2) and temperatures above 80°C due to the coalescence between the neighboring nanorods with large diameter. The nanorods grown at a temperature of 75°C with a low current density of -0.1 mA/cm(2) exhibited the highest density of 1.45 × 10(9) cm(-2). X-ray diffraction measurements revealed that the grown ZnO crystallites were highly oriented along the c-axis. The intensity ratio of the ultraviolet (UV) region emission to the visible region emission, I UV/I VIS, showed a decrement with the current densities for all grown samples. The samples grown at the current density below -0.5 mA/cm(2) showed high I UV/I VIS values closer to or higher than 1.0, suggesting their fewer structural defects. For all the ZnO/graphene structures, the high transmittance up to 65% was obtained at the light wavelength of 550 nm. Structural and optical properties of the grown ZnO structures seem to be effectively controlled by the current density rather than the growth temperature. ZnO nanorod/graphene hybrid structure on glass is expected to be a promising structure for solar cell which is a conceivable candidate to address the global need for an inexpensive alternative energy source.

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

PubMed Central

Suga, Hiroshi; Suzuki, Hiroya; Shinomura, Yuma; Kashiwabara, Shota; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

2016-01-01

Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field. PMID:27725705

Temperature dependence of tris(2,2'-bipyridine) ruthenium (II) device characteristics

NASA Astrophysics Data System (ADS)

Slinker, Jason D.; Malliaras, George G.; Flores-Torres, Samuel; Abruña, Héctor D.; Chunwachirasiri, Withoon; Winokur, Michael J.

2004-04-01

We have investigated the temperature dependence of the current, radiance, and efficiency from electroluminescent devices based on [Ru(bpy)3]2+(PF6-)2, where bpy is 2,2'-bipyridine. We find that the current increases monotonically with temperature from 200 to 380 K, while the radiance reaches a maximum near room temperature. For temperatures greater than room temperature, an irreversible, current-induced degradation occurs with thermal cycling that diminishes both the radiance and the photoluminescence (PL) quantum yield, but does not affect the current. The temperature dependence of the external quantum efficiency is fully accounted for by the dependence of the PL quantum yield as measured from the emissive area of the device. This implies that the contacts remain ohmic throughout the temperature range investigated. The quenching of the PL with temperature was attributed to thermal activation to a nonradiative d-d transition. The temperature dependence of the current shows a complex behavior in which transport appears to be thermally activated, with distinct low-temperature and high-temperature regimes.

White LED performance

NASA Astrophysics Data System (ADS)

Gu, Yimin; Narendran, Nadarajah; Freyssinier, Jean Paul

2004-10-01

Two life tests were conducted to compare the effects of drive current and ambient temperature on the degradation rate of 5 mm and high-flux white LEDs. Tests of 5 mm white LED arrays showed that junction temperature increases produced by drive current had a greater effect on the rate of light output degradation than junction temperature increases from ambient heat. A preliminary test of high-flux white LEDs showed the opposite effect, with junction temperature increases from ambient heat leading to a faster depreciation. However, a second life test is necessary to verify this finding. The dissimilarity in temperature effect among 5 mm and high-flux LEDs is likely caused by packaging differences between the two device types.

Tungsten fiber reinforced superalloy composite high temperature component design considerations

NASA Technical Reports Server (NTRS)

Winsa, E. A.

1982-01-01

Tungsten fiber reinforced superalloy composites (TFRS) are intended for use in high temperature turbine components. Current turbine component design methodology is based on applying the experience, sometimes semiempirical, gained from over 30 years of superalloy component design. Current composite component design capability is generally limited to the methodology for low temperature resin matrix composites. Often the tendency is to treat TFRS as just another superalloy or low temperature composite. However, TFRS behavior is significantly different than that of superalloys, and the high environment adds consideration not common in low temperature composite component design. The methodology used for preliminary design of TFRS components are described. Considerations unique to TFRS are emphasized.

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

NASA Astrophysics Data System (ADS)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Transport critical current measurement apparatus using liquid nitrogen cooled high-Tc superconducting magnet with variable temperature insert

NASA Astrophysics Data System (ADS)

Nishijima, G.; Kitaguchi, H.; Tshuchiya, Y.; Nishimura, T.; Kato, T.

2013-01-01

We have developed an apparatus to investigate transport critical current (Ic) as a function of magnetic field and temperature using only liquid nitrogen. The apparatus consists of a (Bi,Pb)2Sr2Ca2Cu3O10 (Bi-2223) superconducting magnet, an outer dewar, and a variable temperature insert (VTI). The magnet, which is operated in depressurized liquid nitrogen, generates magnetic field up to 1.26 T. The sample is also immersed in liquid nitrogen. The pressure in the VTI is controlled from 0.02 to 0.3 MPa, which corresponds to temperature ranging from 66 to 88 K. We have confirmed the long-term stable operation of the Bi-2223 magnet at 1 T. The temperature stability of the sample at high transport current was also demonstrated. The apparatus provides easy-operating Ic measurement environment for a high-Tc superconductor up to 500 A in magnetic fields up to 1 T and in temperatures ranging from 66 to 88 K.

High heat-flux self-rotating plasma-facing component: Concept and loading test in TEXTOR

NASA Astrophysics Data System (ADS)

Terra, A.; Sergienko, G.; Hubeny, M.; Huber, A.; Mertens, Ph.; Philipps, V.; The Textor Team

2015-08-01

This contribution reports on the concept of a circular self-rotating and temperature self-stabilising plasma-facing component (PFC), and test of a related prototype in TEXTOR tokamak. This PFC uses the Lorentz force induced by plasma current and magnet field (J × B) to create a torque applied on metallic discs which produce a rotational movement. Additional thermionic current, present at high operation temperatures, brings additional temperature stabilisation ability. This self-rotating disk limiter was exposed to plasma in the TEXTOR tokamak under different radial positions to vary the heat flux. This disk structure shows the interesting ability to stabilise its maximum temperature through the fact that the self-induced rotation is modulated by the thermal emission current. It was observed that the rotation speed increased following both the current collected by the limiter, and the temperature of the tungsten disks.

Critical current and electric transport properties of superconducting epitaxial Nb(Ti)N submicron structures

NASA Astrophysics Data System (ADS)

Klimov, A.; Słysz, W.; Guziewicz, M.; Kolkovsky, V.; Wegrzecki, M.; Bar, J.; Marchewka, M.; Seredyński, B.

2016-12-01

Critical current and current-voltage characteristics of epitaxial Nb(Ti)N submicron ultrathin structures were measured as function of temperature. For 700-nm-wide bridge we found current-driven vortex de-pinning at low temperatures and thermally activated flux flow closer to the transition temperature, as the limiting factors for the critical current density. For 100-nm-wide meander we observed combination of phase-slip activation and vortex-anti-vortex pair (VAP) thermal excitation. Our Nb(Ti)N meander structure demonstrates high de-pairing critical current densities 107 A/cm2 at low temperatures, but the critical currents are much smaller due to presence of the local constrictions.

Gallium phosphide high temperature diodes

NASA Technical Reports Server (NTRS)

Chaffin, R. J.; Dawson, L. R.

1981-01-01

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Shot noise at high temperatures

NASA Astrophysics Data System (ADS)

Gutman, D. B.; Gefen, Yuval

2003-07-01

We consider the possibility of measuring nonequilibrium properties of the current correlation functions at high temperatures (and small bias). Through the example of the third cumulant of the current (S3) we demonstrate that odd-order correlation functions represent nonequilibrium physics even at small external bias and high temperatures. We calculate S3=y(eV/T)e2I for a quasi-one-dimensional diffusive constriction. We calculate the scaling function y in two regimes: when the scattering processes are purely elastic and when the inelastic electron-electron scattering is strong. In both cases we find that y interpolates between two constants. In the low- (high-) temperature limit y is strongly (weakly) enhanced (suppressed) by the electron-electron scattering.

Conical Magnetic Bearing Development and Magnetic Bearing Testing for Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Keith, Theo G., Jr.; Jansen, Mark

2004-01-01

The main proposed research of this grant were: to design a high-temperature, conical magnetic bearing facility, to test the high-temperature, radial magnetic bearing facility to higher speeds, to investigate different backup bearing designs and materials, to retrofit the high-temperature test facility with a magnetic thrust bearing, to evaluate test bearings at various conditions, and test several lubricants using a spiral orbit tribometer. A high-temperature, conical magnetic bearing facility has been fully developed using Solidworks. The facility can reuse many of the parts of the current high-temperature, radial magnetic bearing, helping to reduce overall build costs. The facility has the ability to measure bearing force capacity in the X, Y, and Z directions through a novel bearing mounting design. The high temperature coils and laminations, a main component of the facility, are based upon the current radial design and can be fabricated at Texas A&M University. The coil design was highly successful in the radial magnetic bearing. Vendors were contacted about fabrication of the high temperature lamination stack. Stress analysis was done on the laminations. Some of the components were procured, but due to budget cuts, the facility build up was stopped.

Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm-2

NASA Astrophysics Data System (ADS)

Tian, Pengfei; Althumali, Ahmad; Gu, Erdan; Watson, Ian M.; Dawson, Martin D.; Liu, Ran

2016-04-01

The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm-2 for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC.

Characterization of a High Current, Long Life Hollow Cathode

NASA Technical Reports Server (NTRS)

VanNoord, Jonathan L.; Kamhawi, Hani; McEwen, Heather K.

2006-01-01

The advent of higher power spacecraft makes it desirable to use higher power electric propulsion thrusters such as ion thrusters or Hall thrusters. Higher power thrusters require cathodes that are capable of producing higher currents. One application of these higher power spacecraft is deep-space missions that require tens of thousands of hours of operation. This paper presents the approach used to design a high current, long life hollow cathode assembly for that application, along with test results from the corresponding hollow cathode. The design approach used for the candidate hollow cathode was to reduce the temperature gradient in the insert, yielding a lower peak temperature and allowing current to be produced more uniformly along the insert. The lower temperatures result in a hollow cathode with increased life. The hollow cathode designed was successfully operated at currents from 10 to 60 A with flow rates of 5 to 19 sccm with a maximum orifice temperature measured of 1100 C. Data including discharge voltage, keeper voltage, discharge current, flow rates, and orifice plate temperatures are presented.

Non-destructive testing (NDT) of metal cracks using a high Tc rf-SQUID and eddy current method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, D.F.; Fan, C.; Ruan, J.Z.

1994-12-31

A SQUID is the most sensitive device to detect change in magnetic field. A non-destructive testing (NDT) device using high temperature SQUIDs and eddy current method will be much more sensitive than those currently used eddy current systems, yet much cheaper than one with low temperature SQUIDs. In this paper, we present our study of such a NDT device using a high temperature superconducting rf-SQUID as a gradiometer sensor. The result clearly demonstrates the expected sensitivity of the system, and indicates the feasibility of building a portable HTS SQUID NDT device with the help from cryocooler industry. Such a NDTmore » device will have a significant impact on metal corrosion or crack detection technology.« less

Plasma Experiments on an Internal Coil Device with an High Temperature Superconductor

NASA Astrophysics Data System (ADS)

Yuichi, Ogawa; Junji, Morikawa; Kotaro, Ohkuni; Dan, Hori; Shigeo, Yamakosi; Nagato, Yanagi; Toshiyuki, Mito; Masataka, Iwakuma; Toshio, Uede

2003-10-01

An internal coil device would be expected for exploring high beta plasmas based on plasma relaxation process. Prof. A. Hasegawa proposed an advanced fusion reactor with a dipole configuration, and Mahajan and Yoshida developed a new high beta state based on two-fluid relaxation theory. To study these high beta plasmas, we have constructed an internal coil device with a high temperature superconductor. The major radius of the internal coil is 15 cm, and the coil current is 50 kA. Three different types of Ag-sheathed Bi-2223 tapes are employed; i.e., a high critical current tape with a low silver ratio for the main HTS coil, a 0.3wt3atprovided by a GM refrigerator and supplied to the coil through a check valve, and the coil current is directly excited with the external power supply through removable electrodes. It took about 11 hours to cool the coil down to 21 K from the room temperature, and the nominal cable current of 118 A (overall coil current: 50 kA) has been achieved. A decay time constant of the persistent current is a few tens of hours. Plasma experiments in a dipole configuration have been initiated.

High Performance CMOS Light Detector with Dark Current Suppression in Variable-Temperature Systems.

PubMed

Lin, Wen-Sheng; Sung, Guo-Ming; Lin, Jyun-Long

2016-12-23

This paper presents a dark current suppression technique for a light detector in a variable-temperature system. The light detector architecture comprises a photodiode for sensing the ambient light, a dark current diode for conducting dark current suppression, and a current subtractor that is embedded in the current amplifier with enhanced dark current cancellation. The measured dark current of the proposed light detector is lower than that of the epichlorohydrin photoresistor or cadmium sulphide photoresistor. This is advantageous in variable-temperature systems, especially for those with many infrared light-emitting diodes. Experimental results indicate that the maximum dark current of the proposed current amplifier is approximately 135 nA at 125 °C, a near zero dark current is achieved at temperatures lower than 50 °C, and dark current and temperature exhibit an exponential relation at temperatures higher than 50 °C. The dark current of the proposed light detector is lower than 9.23 nA and the linearity is approximately 1.15 μA/lux at an external resistance R SS = 10 kΩ and environmental temperatures from 25 °C to 85 °C.

High Performance CMOS Light Detector with Dark Current Suppression in Variable-Temperature Systems

PubMed Central

Lin, Wen-Sheng; Sung, Guo-Ming; Lin, Jyun-Long

2016-01-01

This paper presents a dark current suppression technique for a light detector in a variable-temperature system. The light detector architecture comprises a photodiode for sensing the ambient light, a dark current diode for conducting dark current suppression, and a current subtractor that is embedded in the current amplifier with enhanced dark current cancellation. The measured dark current of the proposed light detector is lower than that of the epichlorohydrin photoresistor or cadmium sulphide photoresistor. This is advantageous in variable-temperature systems, especially for those with many infrared light-emitting diodes. Experimental results indicate that the maximum dark current of the proposed current amplifier is approximately 135 nA at 125 °C, a near zero dark current is achieved at temperatures lower than 50 °C, and dark current and temperature exhibit an exponential relation at temperatures higher than 50 °C. The dark current of the proposed light detector is lower than 9.23 nA and the linearity is approximately 1.15 μA/lux at an external resistance RSS = 10 kΩ and environmental temperatures from 25 °C to 85 °C. PMID:28025530

Novel Quantification of Sediment Concentration in Turbidity Currents Through in-situ Measurements of Conductivity and Temperature

NASA Astrophysics Data System (ADS)

Xu, J.; Wang, Z.; Gwiazda, R.; Paull, C. K.; Talling, P.; Parsons, D. R.; Maier, K. L.; Simmons, S.; Cartigny, M.

2017-12-01

During a large turbidity current event observed by seven moorings placed along Monterey Canyon, offshore central California, in the axial channel between 300 and 1900 meters water depth, a conductivity/temperature sensor placed 11 meters above canyon floor on the mooring at 1500 meters water depth recorded a rapid decrease of conductivity and increase of temperature during the passage of a large turbidity current. The conductivity decline is unlikely caused by fresh water input owing to lack of precipitation in the region prior to the event. We investigated the mechanisms of turbidity currents' high sediment concentration reducing the measured conductivity. By conducting a series of laboratory experiments with a range of different concentrations, grain size, and water temperature combinations, we quantified a relationship between reduced conductivity and the elevated sediment concentration. This relationship can be used for estimating the very high sediment concentrations in a turbidity current with a condition of assuming constant salinity of the ambient seawater. The empirical relationship was then applied to the in-situ time-series of temperature and conductivity measured during this turbidity current. The highest sediment concentration, in the head of the flow, reached nearly 400 g/L (volume concentration 17%). Such a high value, which has yet been reported in literature for an oceanic turbidity current, will have significant implications for the dynamics and deposits of such flows.

Double disordered YBCO coated conductors of industrial scale: high currents in high magnetic field

NASA Astrophysics Data System (ADS)

Abraimov, D.; Ballarino, A.; Barth, C.; Bottura, L.; Dietrich, R.; Francis, A.; Jaroszynski, J.; Majkic, G. S.; McCallister, J.; Polyanskii, A.; Rossi, L.; Rutt, A.; Santos, M.; Schlenga, K.; Selvamanickam, V.; Senatore, C.; Usoskin, A.; Viouchkov, Y. L.

2015-11-01

A significant increase of critical current in high magnetic field, up to 31 T, was recorded in long tapes manufactured by employing a double-disorder route. In a double-disordered high-temperature superconductor (HTS), a superimposing of intrinsic and extrinsic disorder takes place in a way that (i) the intrinsic disorder is caused by local stoichiometry deviations that lead to defects of crystallinity that serve as pining centers in the YBa2Cu3O x-δ matrix and (ii) the extrinsic disorder is introduced via embedded atoms or particles of foreign material (e.g. barium zirconate), which create a set of lattice defects. We analyzed possible technological reasons for this current gain. The properties of these tapes over a wider field-temperature range as well as field anisotropy were also studied. Record values of critical current as high as 309 A at 31 T, 500 A at 18 Tm and 1200 A at 5 T were found in 4 mm wide tape at 4.2 K and B perpendicular to tape surface. HTS layers were processed in medium-scale equipment that allows a maximum batch length of 250 m while 22 m long batches were provided for investigation. Abnormally high ratios (up to 10) of critical current density measured at 4.2 K, 19 T to critical current density measured at 77 K, self-field were observed in tapes with the highest in-field critical current. Anisotropy of the critical current as well as angular dependences of n and α values were investigated. The temperature dependence of critical current is presented for temperatures between 4.2 and 40 K. Prospects for the suppression of the dog-bone effect by Cu plating and upscale of processing chain to >500 m piece length are discussed.

Current-voltage characteristics of C70 solid near Meyer-Neldel temperature

NASA Astrophysics Data System (ADS)

Onishi, Koichi; Sezaimaru, Kouki; Nakashima, Fumihiro; Sun, Yong; Kirimoto, Kenta; Sakaino, Masamichi; Kanemitsu, Shigeru

2017-06-01

The current-voltage characteristics of the C70 solid with hexagonal closed-packed structures were measured in the temperature range of 250-450 K. The current-voltage characteristics can be described as a temporary expedient by a cubic polynomial of the voltage, i = a v 3 + b v 2 + c v + d . Moreover, the Meyer-Neldel temperature of the C70 solid was confirmed to be 310 K, at which a linear relationship between the current and voltage was observed. Also, at temperatures below the Meyer-Neldel temperature, the current increases with increasing voltage. On the other hand, at temperatures above the Meyer-Neldel temperature a negative differential conductivity effect was observed at high voltage side. The negative differential conductivity was related to the electric field and temperature effects on the mobility of charge carrier, which involve two variations in the carrier concentration and the activation energy for carrier hopping transport.

Experimental Investigation of a Broadband High-Temperature Superconducting Terahertz Mixer Operating at Temperatures Between 40 and 77 K

NASA Astrophysics Data System (ADS)

Gao, Xiang; Du, Jia; Zhang, Ting; Jay Guo, Y.; Foley, Cathy P.

2017-11-01

This paper presents a systematic investigation of a broadband thin-film antenna-coupled high-temperature superconducting (HTS) terahertz (THz) harmonic mixer at relatively high operating temperature from 40 to 77 K. The mixer device chip was fabricated using the CSIRO established step-edge YBa2Cu3O7-x (YBCO) Josephson junction technology, packaged in a well-designed module and cooled in a temperature adjustable cryocooler. Detailed experimental characterizations were carried out for the broadband HTS mixer at both the 200 and 600 GHz bands in harmonic mixing mode. The DC current-voltage characteristics (IVCs), bias current condition, local oscillator (LO) power requirement, frequency response, as well as conversion efficiency under different bath temperatures were thoroughly investigated for demonstrating the frequency down-conversion performance.

Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Kawarada, Hiroshi

2016-08-01

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al2O3 films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al2O3 metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO2 capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al2O3 capacitors are found to outperform the SiO2 capacitors in the cases where the capacitors are negatively biased and the gate material is adequately selected to reduce virtual dipoles at the gate/Al2O3 interface. The Al2O3 electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al2O3 capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al2O3. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al2O3 capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al2O3/underlying SiO2 interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al2O3 films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al2O3 films.

Thermoelectric effects in graphene at high bias current and under microwave irradiation.

PubMed

Skoblin, Grigory; Sun, Jie; Yurgens, August

2017-11-14

We use a split top gate to induce doping of opposite signs in different parts of a graphene field-effect transistor, thereby effectively forming a graphene thermocouple. The thermocouple is sensitive to the electronic temperature in graphene, which can be several hundred kelvin higher than the ambient one at sufficiently high bias current. Combined with the high thermoelectric power of graphene, this allows for i) simple measurements of the electronic temperature and ii) building thermoelectric radiation detectors. A simple prototype graphene thermoelectric detector shows a temperature-independent optical responsivity of around 400 V/W at 94 GHz at temperatures of 4-50 K.

Experimental investigations of an AC pulse heating method for vehicular high power lithium-ion batteries at subzero temperatures

NASA Astrophysics Data System (ADS)

Zhu, Jiangong; Sun, Zechang; Wei, Xuezhe; Dai, Haifeng; Gu, Weijun

2017-11-01

Effect of the AC (alternating current) pulse heating method on battery SoH (state of health) for large laminated power lithium-ion batteries at low temperature is investigated experimentally. Firstly, excitation current frequencies, amplitudes, and voltage limitations on cell temperature evolution are studied. High current amplitudes facilitate the heat accumulation and temperature rise. Low frequency region serves as a good innovation to heat the battery because of the large impedance. Wide voltage limitations also enjoy better temperature evolution owing to the less current modulation, but the temperature difference originated from various voltage limitations attenuates due to the decrement of impedance resulting from the temperature rise. Experiments with the thermocouple-embedded cell manifest good temperature homogeneity between the battery surface and interior during the AC heating process. Secondly, the cell capacity, Direct Current resistance and Electrochemical Impedance Spectroscopy are all calibrated to assess the battery SoH after the hundreds of AC pulse heating cycles. Also, all cells are disassembled to investigate the battery internal morphology with the employment of Scanning Electron Microscope and Energy-Dispersive x-ray Spectroscopy techniques. The results indicate that the AC heating method does not aggravate the cell degradation even in the low frequency range (0.5 Hz) under the normal voltage protection limitation.

Note: Temperature effects in the modified Howland current source for electrical bioimpedance spectroscopy.

PubMed

Fernandez Santos, S; Bertemes-Filho, P

2017-07-01

The aim of this study is to show how the modified Howland current source (MHCS) is affected by temperature changes. The source has been tested in a temperature range from 20 to 70 °C and frequency range from 100 Hz to 1 MHz. Parameters like output current, output impedance, total harmonic distortion, and oscillation have been measured. The measurements were made inside a temperature controlled environment. It was showed that the MHCS is stable at temperatures below 70 °C. Operational amplifiers with a low temperature drift and matching resistor should be carefully considered in order to prevent oscillations at high temperatures.

Note: Temperature effects in the modified Howland current source for electrical bioimpedance spectroscopy

NASA Astrophysics Data System (ADS)

Fernandez Santos, S.; Bertemes-Filho, P.

2017-07-01

The aim of this study is to show how the modified Howland current source (MHCS) is affected by temperature changes. The source has been tested in a temperature range from 20 to 70 °C and frequency range from 100 Hz to 1 MHz. Parameters like output current, output impedance, total harmonic distortion, and oscillation have been measured. The measurements were made inside a temperature controlled environment. It was showed that the MHCS is stable at temperatures below 70 °C. Operational amplifiers with a low temperature drift and matching resistor should be carefully considered in order to prevent oscillations at high temperatures.

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

NASA Technical Reports Server (NTRS)

1996-01-01

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Cryoelectrolysis—electrolytic processes in a frozen physiological saline medium

PubMed Central

Lugnani, Franco; Macchioro, Matteo

2017-01-01

Background Cryoelectrolysis is a new minimally invasive tissue ablation surgical technique that combines the ablation techniques of electrolytic ablation with cryosurgery. The goal of this study is to examine the hypothesis that electrolysis can take place in a frozen aqueous saline solution. Method To examine the hypothesis we performed a cryoelectrolytic ablation protocol in which electrolysis and cryosurgery are delivered simultaneously in a tissue simulant made of physiological saline gel with a pH dye. We measured current flow, voltage and extents of freezing and pH dye staining. Results Using optical measurements and measurements of currents, we have shown that electrolysis can occur in frozen physiological saline, at high subzero freezing temperatures, above the eutectic temperature of the frozen salt solution. It was observed that electrolysis occurs when the tissue resides at high subzero temperatures during the freezing stage and essentially throughout the entire thawing stage. We also found that during thawing, the frozen lesion temperature raises rapidly to high subfreezing values and remains at those values throughout the thawing stage. Substantial electrolysis occurs during the thawing stage. Another interesting finding is that electro-osmotic flows affect the process of cryoelectrolysis at the anode and cathode, in different ways. Discussion The results showing that electrical current flow and electrolysis occur in frozen saline solutions imply a mechanism involving ionic movement in the fluid concentrated saline solution channels between ice crystals, at high subfreezing temperatures. Temperatures higher than the eutectic are required for the brine to be fluid. The particular pattern of temperature and electrical currents during the thawing stage of frozen tissue, can be explained by the large amounts of energy that must be removed at the outer edge of the frozen lesion because of the solid/liquid phase transformation on that interface. Conclusion Electrolysis can occur in a frozen domain at high subfreezing temperature, probably above the eutectic. It appears that the most effective period for delivering electrolytic currents in cryoelectrolysis is during the high subzero temperatures stage while freezing and immediately after cooling has stopped, throughout the thawing stage. PMID:28123904

Cryoelectrolysis-electrolytic processes in a frozen physiological saline medium.

PubMed

Lugnani, Franco; Macchioro, Matteo; Rubinsky, Boris

2017-01-01

Cryoelectrolysis is a new minimally invasive tissue ablation surgical technique that combines the ablation techniques of electrolytic ablation with cryosurgery. The goal of this study is to examine the hypothesis that electrolysis can take place in a frozen aqueous saline solution. To examine the hypothesis we performed a cryoelectrolytic ablation protocol in which electrolysis and cryosurgery are delivered simultaneously in a tissue simulant made of physiological saline gel with a pH dye. We measured current flow, voltage and extents of freezing and pH dye staining. Using optical measurements and measurements of currents, we have shown that electrolysis can occur in frozen physiological saline, at high subzero freezing temperatures, above the eutectic temperature of the frozen salt solution. It was observed that electrolysis occurs when the tissue resides at high subzero temperatures during the freezing stage and essentially throughout the entire thawing stage. We also found that during thawing, the frozen lesion temperature raises rapidly to high subfreezing values and remains at those values throughout the thawing stage. Substantial electrolysis occurs during the thawing stage. Another interesting finding is that electro-osmotic flows affect the process of cryoelectrolysis at the anode and cathode, in different ways. The results showing that electrical current flow and electrolysis occur in frozen saline solutions imply a mechanism involving ionic movement in the fluid concentrated saline solution channels between ice crystals, at high subfreezing temperatures. Temperatures higher than the eutectic are required for the brine to be fluid. The particular pattern of temperature and electrical currents during the thawing stage of frozen tissue, can be explained by the large amounts of energy that must be removed at the outer edge of the frozen lesion because of the solid/liquid phase transformation on that interface. Electrolysis can occur in a frozen domain at high subfreezing temperature, probably above the eutectic. It appears that the most effective period for delivering electrolytic currents in cryoelectrolysis is during the high subzero temperatures stage while freezing and immediately after cooling has stopped, throughout the thawing stage.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2014-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors with Cracks

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This work analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. In contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 eV to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared to the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.

Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes

NASA Astrophysics Data System (ADS)

Okino, Hiroyuki; Kameshiro, Norifumi; Konishi, Kumiko; Shima, Akio; Yamada, Ren-ichi

2017-12-01

Nickel (Ni), titanium (Ti), and molybdenum (Mo) 4H-silicon carbide Schottky-barrier diodes (SiC SBDs) were fabricated and used to investigate the relation between forward and reverse currents. Temperature dependence of reverse current follows a theory that includes tunneling in regard to thermionic emission, namely, temperature dependence is weak at low temperature but strong at high temperatures. On the other hand, the reverse currents of the Ni and Mo SBDs are higher than their respective currents calculated from their Schottky barrier heights (SBHs), whereas the reverse current of the Ti SBD agrees well with that calculated from its SBH. The cause of the high reverse currents was investigated from the viewpoints of low barrier patch, Gaussian distribution of barrier height (GD), thin surface barrier, and electron effective mass. The high reverse current of the Ni and Mo SBDs can be explained not in terms of a low-barrier patch, GD, or thin surface barrier but in terms of small effective masses. Investigation of crystal structures at the Schottky interface revealed a large lattice mismatch between the metals (Ni, Ti, or Mo) and SiC for the Ni and Mo SBDs. The small effective mass is possibly attributed to the large lattice mismatch, which might generate transition layers at the Schottky interface. It is concluded from these results that the lattice constant as well as the work function is an important factor in selecting the metal species as the Schottky metal for wide band-gap SBDs, for which tunneling current dominates reverse current.

High-Energy-Density, Low-Temperature Li/CFx Primary Cells

NASA Technical Reports Server (NTRS)

Whitacre, Jay; Bugga, Ratnakumar; Smart, Marshall; Prakash, G.; Yazami, Rachid

2007-01-01

High-energy-density primary (nonrechargeable) electrochemical cells capable of relatively high discharge currents at temperatures as low as -40 C have been developed through modification of the chemistry of commercial Li/CFx cells and batteries. The commercial Li/CFx units are not suitable for high-current and low-temperature applications because they are current limited and their maximum discharge rates decrease with decreasing temperature. The term "Li/CFx" refers to an anode made of lithium and a cathode made of a fluorinated carbonaceous material (typically graphite). In commercial cells, x typically ranges from 1.05 to 1.1. This cell composition makes it possible to attain specific energies up to 800 Wh/kg, but in order to prevent cell polarization and the consequent large loss of cell capacity, it is typically necessary to keep discharge currents below C/50 (where C is numerically equal to the current that, flowing during a charge or discharge time of one hour, would integrate to the nominal charge or discharge capacity of a cell). This limitation has been attributed to the low electronic conductivity of CFx for x approx. 1. To some extent, the limitation might be overcome by making cathodes thinner, and some battery manufacturers have obtained promising results using thin cathode structures in spiral configurations. The present approach includes not only making cathodes relatively thin [.2 mils (.0.051 mm)] but also using sub-fluorinated CFx cathode materials (x < 1) in conjunction with electrolytes formulated for use at low temperatures. The reason for choosing sub-fluorinated CFx cathode materials is that their electronic conductivities are high, relative to those for which x > 1. It was known from recent prior research that cells containing sub-fluorinated CFx cathodes (x between 0.33 and 0.66) are capable of retaining substantial portions of their nominal low-current specific energies when discharged at rates as high as 5C at room temperature. However, until experimental cells were fabricated following the present approach and tested, it was not known whether or to what extent low-temperature performance would be improved.

Transport critical current measurement apparatus using liquid nitrogen cooled high-T(c) superconducting magnet with variable temperature insert.

PubMed

Nishijima, G; Kitaguchi, H; Tshuchiya, Y; Nishimura, T; Kato, T

2013-01-01

We have developed an apparatus to investigate transport critical current (I(c)) as a function of magnetic field and temperature using only liquid nitrogen. The apparatus consists of a (Bi,Pb)(2)Sr(2)Ca(2)Cu(3)O(10) (Bi-2223) superconducting magnet, an outer dewar, and a variable temperature insert (VTI). The magnet, which is operated in depressurized liquid nitrogen, generates magnetic field up to 1.26 T. The sample is also immersed in liquid nitrogen. The pressure in the VTI is controlled from 0.02 to 0.3 MPa, which corresponds to temperature ranging from 66 to 88 K. We have confirmed the long-term stable operation of the Bi-2223 magnet at 1 T. The temperature stability of the sample at high transport current was also demonstrated. The apparatus provides easy-operating I(c) measurement environment for a high-T(c) superconductor up to 500 A in magnetic fields up to 1 T and in temperatures ranging from 66 to 88 K.

Superconducting dc Current Limiting Vacuum Circuit Breaker

NASA Astrophysics Data System (ADS)

Alferov, D. F.; Akhmetgareev, M. R.; Budovskii, A. I.; Bunin, R. A.; Voloshin, I. F.; Degtyarenko, P. N.; Yevsin, D. V.; Ivanov, V. P.; Sidorov, V. A.; Fisher, L. M.; Tshai, E. V.

Acircuitofadc superconductingfault current limiter witha direct current circuit-breaker fora nominal current 300A is proposed. It includes the 2G high temperature superconducting (HTS) tapes and the high-speed dc vacuum circuit breaker.Thetestresultsof current-limitingcapacityandrecoverytimeof superconductivityafter currentfaultatvoltage upto3 kV are presented.

High temperature superconductor materials and applications

NASA Technical Reports Server (NTRS)

Doane, George B., III.; Banks, Curtis; Golben, John

1990-01-01

Research on processing methods leading to a significant enhancement in the critical current densities (Jc) and the critical temperature (Tc) of high temperature superconducting in thin bulk and thin film forms. The fabrication of important devices for NASA unique applications (sensors) is investigated.

Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons

NASA Astrophysics Data System (ADS)

Majidi, Danial; Faez, Rahim

2017-02-01

In this paper, using first principle calculation and non-equilibrium Green's function, the thermally induced spin current in Hydrogen terminated Zigzag-edge Germanene Nanoribbon (ZGeNR-H) is investigated. In this model, because of the difference between the source and the drain temperature of ZGeNR device, the spin up and spin down currents flow in the opposite direction with two different threshold temperatures (Tth). Hence, a pure spin polarized current which belongs to spin down is obtained. It is shown that, for temperatures above the threshold temperature spin down current increases with the increasing temperature up to 75 K and then decreases. But spin up current rises steadily and in the high temperature we can obtain polarized spin up current. In addition, we show an acceptable spin current around the room temperature for ZGeNR. The transmission peaks in ZGeNR which are closer to the Fermi level rather than Zigzag Graphene Nanoribbon (ZGNRS) which causes ZGeNR to have spin current at higher temperatures. Finally, it is indicated that by tuning the back gate voltage, the spin current can be completely modulated and polarized. Simulation results verify the Zigzag Germanene Nanoribbon as a promising candidate for spin caloritronics devices, which can be applied in future low power consumption technology.

Making High-Temperature Superconductors By Melt Sintering

NASA Technical Reports Server (NTRS)

Golben, John P.

1992-01-01

Melt-sintering technique applied to YBa2Cu3O7-x system and to Bi/Ca/Sr/Cu-oxide system to produce highly oriented bulk high-temperature-superconductor materials extending to macroscopically usable dimensions. Processing requires relatively inexpensive and simple equipment. Because critical current two orders of magnitude greater in crystal ab plane than in crystal c direction, high degree of orientation greatly enhances critical current in these bulk materials, making them more suitable for many proposed applications.

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

NASA Astrophysics Data System (ADS)

Okada, Aoi; Nishio, Johji; Iijima, Ryosuke; Ota, Chiharu; Goryu, Akihiro; Miyazato, Masaki; Ryo, Mina; Shinohe, Takashi; Miyajima, Masaaki; Kato, Tomohisa; Yonezawa, Yoshiyuki; Okumura, Hajime

2018-06-01

To investigate the mechanism of contraction/expansion behavior of Shockley stacking faults (SSFs) in 4H-SiC p–i–n diodes, the dependences of the SSF behavior on temperature and injection current density were investigated by electroluminescence image observation. We investigated the dependences of both triangle- and bar-shaped SSFs on the injection current density at four temperature levels. All SSFs in this study show similar temperature and injection current density dependences. We found that the expansion of SSFs at a high current density was converted to contraction at a certain value as the current decreased and that the value is temperature-dependent. It has been confirmed that SSF behavior, which was considered complex or peculiar, might be explained mainly by the energy change caused by SSFs.

Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirch, J. D.; Chang, C.-C.; Boyle, C.

2015-04-13

By stepwise tapering, both the barrier heights and quantum-well depths in the active regions of 8.7–8.8 μm-emitting quantum-cascade-laser (QCL) structures, virtually complete carrier-leakage suppression is achieved. Such step-taper active-region-type QCLs possess, for 3 mm-long devices with high-reflectivity-coated back facets, threshold-current characteristic temperature coefficients, T{sub 0}, as high as 283 K and slope-efficiency characteristic temperature coefficients, T{sub 1}, as high as 561 K, over the 20–60 °C heatsink-temperature range. These high T{sub 0} and T{sub 1} values reflect at least a factor of four reduction in carrier-leakage current compared to conventional 8–9 μm-emitting QCLs. Room temperature, pulsed, threshold-current densities are 1.58 kA/cm{sup 2}; values comparable to those formore » 35-period conventional QCLs of similar injector-region doping level. Superlinear behavior of the light-current curves is shown to be the result of the onset of resonant extraction from the lower laser level at a drive level of ∼1.3× threshold. Maximum room-temperature slope efficiencies are 1.23 W/A; that is, slope efficiency per period values of 35 mW/A, which are 37%–40% higher than for same-geometry conventional 8–9 μm-emitting QCLs. Since the waveguide-loss coefficients are very similar, we estimate that the internal differential efficiency is at least 30% higher than in conventional QCLs. Such high internal differential efficiency values reflect the combined effect of nearly complete carrier-leakage suppression and high differential efficiency of the laser transition (∼90%), due to resonant extraction from the lower laser level.« less

Durability of Polymer Electrolyte Membrane Fuel Cells Operated at Subfreezing Temperatures

DOE PAGES

Macauley, Natalia; Lujan, Roger W.; Spernjak, Dusan; ...

2016-09-15

The structure, composition, and interfaces of membrane electrode assemblies (MEA) and gas-diffusion layers (GDLs) have a significant effect on the performance of single-proton-exchange-membrane (PEM) fuel cells operated isothermally at subfreezing temperatures. During isothermal constant-current operation at subfreezing temperatures, water forming at the cathode initially hydrates the membrane, then forms ice in the catalyst layer and/or GDL. This ice formation results in a gradual decay in voltage. High-frequency resistance initially decreases due to an increase in membrane water content and then increases over time as the contact resistance increases. The water/ice holding capacity of a fuel cell decreases with decreasing subfreezingmore » temperature (-10°C vs. -20°C vs. -30°C) and increasing current density (0.02 A cm -2 vs. 0.04 A cm -2). Ice formation monitored using in-situ high-resolution neutron radiography indicated that the ice was concentrated near the cathode catalyst layer at low operating temperatures (≈-20°C) and high current densities (0.04 A cm -2). Significant ice formation was also observed in the GDLs at higher subfreezing temperatures (≈-10°C) and lower current densities (0.02 A cm -2). These results are in good agreement with the long-term durability observations that show more severe degradation at lower temperatures (-20°C and -30°C).« less

Spectroscopic investigation of the high-current phase of a pulsed GMAW process

NASA Astrophysics Data System (ADS)

Rouffet, M. E.; Wendt, M.; Goett, G.; Kozakov, R.; Schoepp, H.; Weltmann, K. D.; Uhrlandt, D.

2010-11-01

While metal vapours have an important impact on the efficiency of the pulsed gas metal arc welding process, only a few papers are focused on this effect. In this paper, methods based on emission spectroscopy are performed to improve the understanding of the physical phenomena occurring during the high-current pulse. Boltzmann plots applied to iron lines, the Stark broadening of the 696.5 nm argon line and composition calculations assuming local thermodynamic equilibrium are used to determine characteristic parameters of the plasma. It is observed that the central part of the arc is composed mainly of iron. The percentage of iron increases quickly at the beginning of the high-current pulse, and slowly decreases when the central part broadens. During the high-current phase the temperature profile has a minimum value of around 8000 K at the axis of the arc while the argon envelope of the central part reaches temperatures of approximately 13.000 K. The high percentage of iron and the high radiation of the plasma at the centre can explain the measured shape of the temperature profile.

Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields

NASA Astrophysics Data System (ADS)

Xiang, An; Xu, Xingliang; Zhang, Lin; Li, Zhiqiang; Li, Juntao; Dai, Gang

2018-02-01

The conduction of current from n-4H-SiC into pyrogenic and dry oxidized films is studied. Anomalous current conduction was observed at a high electric field above 8 MV/cm for dry oxidized metal-oxide-semiconductor (MOS) capacitors, which cannot be interpreted in the framework of pure Fowler-Nordheim tunneling. The temperature-dependent current measurement and density of interface trap estimated from the hi-lo method for the SiO2/4H-SiC interface revealed that the combined current conduction of Fowler-Nordheim and Poole-Frenkel emission is responsible for the current conduction in both pyrogenic and dry oxidized MOS capacitors. Furthermore, the origin of temperature dependent current conduction is the Poole-Frenkel emission via the carbon pair defect trap level at 1.3 eV below the conduction band edge of SiO2. In addition, with the dry oxidized capacitors, the enhanced temperature dependent current above 8 MV/cm is attributed to the PF emission via a trap level at 1.47 eV below the conduction band edge of SiO2, which corresponds to another configuration of a carbon pair defect in SiO2 films.

Development of Thermally Actuated, High-Temperature Composite Morphing Concepts

DTIC Science & Technology

2016-05-11

Thermally Actuated, High- Temperature Composite Morphing Concepts 5a. CONTRACT NUMBER EOARD 14-0063 5b. GRANT NUMBER FA9550-14-1-0063 5c...mismatched thermal expansion coefficients. However, current bimorphs are generally limited to benign temperatures and linear temperature displacement... temperature morphing structures. Successful application of this work may yield morphing hot structures in extreme environments. A particularly appealing

Development of Thermally Actuated, High Temperature Composite Morphing Concepts

DTIC Science & Technology

2016-03-31

Thermally Actuated, High- Temperature Composite Morphing Concepts 5a. CONTRACT NUMBER EOARD 14-0063 5b. GRANT NUMBER FA9550-14-1-0063 5c...mismatched thermal expansion coefficients. However, current bimorphs are generally limited to benign temperatures and linear temperature displacement... temperature morphing structures. Successful application of this work may yield morphing hot structures in extreme environments. A particularly appealing

A high-temperature superconducting transformer with localized magnetic field

NASA Astrophysics Data System (ADS)

Volkov, E. P.; Dzhafarov, E. A.

2013-12-01

This paper describes a high-temperature superconducting transformer with a bar-type magnetic core and concentric windings with alternating layers, with single-channel and multi-channel arrangements. There is given the design concept of high-temperature superconducting windings of the transformer, made in the form of newly developed first-generation high-temperature superconducting ribbon wires, with localized magnetic field intended for producing maximum transport currents in the windings, as well as for reducing the consumption of a high-temperature superconducting material, cooling agent, and energy losses in these windings.

Superconducting magnetic control system for manipulation of particulate matter and magnetic probes in medical and industrial applications

DOEpatents

Cha, Yung Sheng; Hull, John R.; Askew, Thomas R.

2006-07-11

A system and method of controlling movement of magnetic material with at least first and second high temperature superconductors at spaced locations. A plurality of solenoids are associated with the superconductors to induce a persistent currents in preselected high temperature superconductors establishing a plurality of magnetic fields in response to pulsed currents introduced to one or more of the solenoids. Control mechanism in communication with said solenoids and/or said high temperature superconductors are used to demagnetize selected ones of the high temperature superconductors to reduce the magnetic fields substantially to zero. Magnetic material is moved between magnetic fields by establishing the presence thereof and thereafter reducing magnetic fields substantially to zero and establishing magnetic fields in other superconductors arranged in a predetermined configuration.

Characteristic parameters of superconductor-coolant interaction including high Tc current density limits

NASA Technical Reports Server (NTRS)

Frederking, T. H. K.

1989-01-01

In the area of basic mechanisms of helium heat transfer and related influence on super-conducting magnet stability, thermal boundary conditions are important constraints. Characteristic lengths are considered along with other parameters of the superconducting composite-coolant system. Based on helium temperature range developments, limiting critical current densities are assessed at low fields for high transition temperature superconductors.

Improved Thermal-Switch Disks Protect Batteries

NASA Technical Reports Server (NTRS)

Darcy, Eric; Bragg, Bobby

1990-01-01

Improved thermal-switch disks help protect electrical batteries against high currents like those due to short circuits or high demands for power in circuits supplied by batteries. Protects batteries against excessive temperatures. Centered by insulating fiberglass washer. Contains conductive polymer that undergoes abrupt increase in electrical resistance when excessive current raises its temperature above specific point. After cooling, polymer reverts to low resistance. Disks reusable.

Nonaqueous Electrical Storage Device

DOEpatents

McEwen, Alan B.; Evans, David A.; Blakley, Thomas J.; Goldman, Jay L.

1999-10-26

An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes sandwiched between two current collectors fabricated of a conductive polymer having a flow temperature greater than 130.degree. C., the perimeter of the electrochemical capacitor being sealed with a high temperature gasket to form a single cell device. The gasket material is a thermoplastic stable at temperatures greater than 100.degree. C., preferably a polyester or a polyurethane, and having a reflow temperature above 130.degree. C. but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance (ESR), and is stable at high potentials. In addition, the packaging is designed to be easily manufacturable by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.

Effect of atomic layer deposition temperature on current conduction in Al{sub 2}O{sub 3} films formed using H{sub 2}O oxidant

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiraiwa, Atsushi, E-mail: hiraiwa@aoni.waseda.jp, E-mail: qs4a-hriw@asahi-net.or.jp; Matsumura, Daisuke; Kawarada, Hiroshi, E-mail: kawarada@waseda.jp

To develop high-performance, high-reliability gate insulation and surface passivation technologies for wide-bandgap semiconductor devices, the effect of atomic layer deposition (ALD) temperature on current conduction in Al{sub 2}O{sub 3} films is investigated based on the recently proposed space-charge-controlled field emission model. Leakage current measurement shows that Al{sub 2}O{sub 3} metal-insulator-semiconductor capacitors formed on the Si substrates underperform thermally grown SiO{sub 2} capacitors at the same average field. However, using equivalent oxide field as a more practical measure, the Al{sub 2}O{sub 3} capacitors are found to outperform the SiO{sub 2} capacitors in the cases where the capacitors are negatively biased andmore » the gate material is adequately selected to reduce virtual dipoles at the gate/Al{sub 2}O{sub 3} interface. The Al{sub 2}O{sub 3} electron affinity increases with the increasing ALD temperature, but the gate-side virtual dipoles are not affected. Therefore, the leakage current of negatively biased Al{sub 2}O{sub 3} capacitors is approximately independent of the ALD temperature because of the compensation of the opposite effects of increased electron affinity and permittivity in Al{sub 2}O{sub 3}. By contrast, the substrate-side sheet of charge increases with increasing ALD temperature above 210 °C and hence enhances the current of positively biased Al{sub 2}O{sub 3} capacitors more significantly at high temperatures. Additionally, an anomalous oscillatory shift of the current-voltage characteristics with ALD temperature was observed in positively biased capacitors formed by low-temperature (≤210 °C) ALD. This shift is caused by dipoles at the Al{sub 2}O{sub 3}/underlying SiO{sub 2} interface. Although they have a minimal positive-bias leakage current, the low-temperature-grown Al{sub 2}O{sub 3} films cause the so-called blisters problem when heated above 400 °C. Therefore, because of the absence of blistering, a 450 °C ALD process is presently the most promising technology for growing high-reliability Al{sub 2}O{sub 3} films.« less

Vortices in high-performance high-temperature superconductors

DOE PAGES

Kwok, Wai-Kwong; Welp, Ulrich; Glatz, Andreas; ...

2016-09-21

The behavior of vortex matter in high-temperature superconductors (HTS) controls the entire electromagnetic response of the material, including its current carrying capacity. In this paper, we review the basic concepts of vortex pinning and its application to a complex mixed pinning landscape to enhance the critical current and to reduce its anisotropy. We focus on recent scientific advances that have resulted in large enhancements of the in-field critical current in state-of-the-art second generation (2G) YBCO coated conductors and on the prospect of an isotropic, high-critical current superconductor in the iron-based superconductors. Finally, we discuss an emerging new paradigm of criticalmore » current by design—a drive to achieve a quantitative correlation between the observed critical current density and mesoscale mixed pinning landscapes by using realistic input parameters in an innovative and powerful large-scale time dependent Ginzburg–Landau approach to simulating vortex dynamics.« less

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

NASA Astrophysics Data System (ADS)

Ishii, Hajime; Ueno, Hiroaki; Ueda, Tetsuzo; Endoh, Tetsuo

2018-06-01

In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (I dmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% I dmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (g m) peak of the g m–V g characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

Temperature-dependent performance of all-NbN DC-SQUID magnetometers

NASA Astrophysics Data System (ADS)

Liu, Quansheng; Wang, Huiwu; Zhang, Qiyu; Wang, Hai; Peng, Wei; Wang, Zhen

2017-05-01

Integrated NbN direct current superconducting quantum interference device (DC-SQUID) magnetometers were developed based on high-quality epitaxial NbN/AlN/NbN Josephson junctions for SQUID applications operating at high temperatures. We report the current-voltage and voltage-flux characteristics and the noise performance of the NbN DC-SQUIDs for temperatures ranging from 4.2 to 9 K. The critical current and voltage swing of the DC-SQUIDs decreased by 15% and 25%, respectively, as the temperature was increased from 4.2 to 9 K. The white flux noise of the DC-SQUID magnetometer at 1 kHz increased from 3.9 μΦ0/Hz1/2 at 4.2 K to 4.8 μΦ0/Hz1/2 at 9 K with 23% increase, corresponding to the magnetic field noise of 6.6 and 8.1 fT/Hz1/2, respectively. The results show that NbN DC-SQUIDs improve the tolerance of the operating temperatures and temperature fluctuations in SQUID applications.

An MRI-Compatible High Frequency AC Resistive Heating System for Homeothermic Maintenance in Small Animals

PubMed Central

Gomes, Ana L.; Kinchesh, Paul; Kersemans, Veerle; Allen, Philip D.; Smart, Sean C.

2016-01-01

Purpose To develop an MRI-compatible resistive heater, using high frequency alternating current (AC), for temperature maintenance of anaesthetised animals. Materials and Methods An MRI-compatible resistive electrical heater was formed from narrow gauge wire connected to a high frequency (10–100 kHz) AC power source. Multiple gradient echo images covering a range of echo times, and pulse-acquire spectra were acquired with the wire heater powered using high frequency AC or DC power sources and without any current flowing in order to assess the sensitivity of the MRI acquisitions to the presence of current flow through the heater wire. The efficacy of temperature maintenance using the AC heater was assessed by measuring rectal temperature immediately following induction of general anaesthesia for a period of 30 minutes in three different mice. Results Images and spectra acquired in the presence and absence of 50–100 kHz AC through the wire heater were indistinguishable, whereas DC power created field shifts and lineshape distortions. Temperature lost during induction of anaesthesia was recovered within approximately 20 minutes and a stable temperature was reached as the mouse’s temperature approached the set target. Conclusion The AC-powered wire heater maintains adequate heat input to the animal to maintain body temperature, and does not compromise image quality. PMID:27806062

Multiple current peaks in room-temperature atmospheric pressure homogenous dielectric barrier discharge plasma excited by high-voltage tunable nanosecond pulse in air

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, De-Zheng; Wang, Wen-Chun; Zhang, Shuai

2013-05-13

Room temperature homogenous dielectric barrier discharge plasma with high instantaneous energy efficiency is acquired by using nanosecond pulse voltage with 20-200 ns tunable pulse width. Increasing the voltage pulse width can lead to the generation of regular and stable multiple current peaks in each discharge sequence. When the voltage pulse width is 200 ns, more than 5 organized current peaks can be observed under 26 kV peak voltage. Investigation also shows that the organized multiple current peaks only appear in homogenous discharge mode. When the discharge is filament mode, organized multiple current peaks are replaced by chaotic filament current peaks.

Forward voltage short-pulse technique for measuring high power laser array junction temperature

NASA Technical Reports Server (NTRS)

Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

2012-01-01

The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Conductivity Analysis of Membranes for High-Temperature PEMFC Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reed, R.; Turner, J.A.

2005-01-01

Low-temperature operation requirements for per-fluorinated membranes are one factor that limits the viability of current fuel cell technology for transportation and other uses. Because of this, high-temperature membrane materials are being researched. The protonic conductivity of organic/inorganic hybrid composites, Nafion® analog material, and heteropoly acid doped Nafion membranes were studied using a BekkTech® conductivity test cell as a hydrogen pump. The goal was to find a high-temperature membrane with sufficient enough conductive properties to replace the currently implemented low-temperature membranes, such as Nafion. Four-point conductivity measurements were taken using a hydrogen pump experiment. Results showed that one of the organic/inorganicmore » membranes that we tested had similar protonic conductivity to Nafion. Nafion analog membranes were shown to have similar to slightly better conductivity than Nafion at high-temperatures. However, like Nafion, performance dropped upon dehydration of the membrane at higher temperatures. Of the heteropoly acid doped Nafion membranes studied, silicotungstic acid was found to be, overall, the most promising for use as a dopant.« less

Making the case for high temperature low sag (htls) overhead transmission line conductors

NASA Astrophysics Data System (ADS)

Banerjee, Koustubh

The future grid will face challenges to meet an increased power demand by the consumers. Various solutions were studied to address this issue. One alternative to realize increased power flow in the grid is to use High Temperature Low Sag (HTLS) since it fulfills essential criteria of less sag and good material performance with temperature. HTLS conductors like Aluminum Conductor Composite Reinforced (ACCR) and Aluminum Conductor Carbon Composite (ACCC) are expected to face high operating temperatures of 150-200 degree Celsius in order to achieve the desired increased power flow. Therefore, it is imperative to characterize the material performance of these conductors with temperature. The work presented in this thesis addresses the characterization of carbon composite core based and metal matrix core based HTLS conductors. The thesis focuses on the study of variation of tensile strength of the carbon composite core with temperature and the level of temperature rise of the HTLS conductors due to fault currents cleared by backup protection. In this thesis, Dynamic Mechanical Analysis (DMA) was used to quantify the loss in storage modulus of carbon composite cores with temperature. It has been previously shown in literature that storage modulus is correlated to the tensile strength of the composite. Current temperature relationships of HTLS conductors were determined using the IEEE 738-2006 standard. Temperature rise of these conductors due to fault currents were also simulated. All simulations were performed using Microsoft Visual C++ suite. Tensile testing of metal matrix core was also performed. Results of DMA on carbon composite cores show that the storage modulus, hence tensile strength, decreases rapidly in the temperature range of intended use. DMA on composite cores subjected to heat treatment were conducted to investigate any changes in the variation of storage modulus curves. The experiments also indicates that carbon composites cores subjected to temperatures at or above 250 degree Celsius can cause permanent loss of mechanical properties including tensile strength. The fault current temperature analysis of carbon composite based conductors reveal that fault currents eventually cleared by backup protection in the event of primary protection failure can cause damage to fiber matrix interface.

A comparison of temperature and humidity effects on phosphor-converted LED packages and the prediction of remaining useful life with state estimation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lall, Pradeep; Zhang, Hao; Davis, Lynn

This paper focuses on the failure mechanisms and color stability of a commercially available high power LED under harsh environmental conditions. 3 groups of the same pc-HB warm white LED were used in the experiment. The first group was subjected to both high temperature and high relative humidity (85°C/85%RH) with a 350mA bias current. The second group was subjected to only temperature stress at 105°C with a 350mA bias current. The last group was subjected to extreme high temperature 175°C and high bias current (500mA). Samples were taken out from the chamber for both photometric and colorimetric analysis at periodicmore » intervals to investigate the change of the optical parameters. The physics of failure due to the material degradation has been correlated with the change in the photometric and colorimetric parameters of the LED packages. At the end of the experiment, 6000 hours of data is projected forward with state estimation methods to compare with projections made with the TM-21 method. Experimental results shows that only optical parts degrades at high temperature conditions. However, at both high temperature and high relative humidity condition, the phosphor layer of the pc-LED can swell and the color stability of LEDs degrades significantly. Also, comparison between TM-21 method and state estimation method shows that state estimation can achieve the same goal with a relatively easy method.« less

Simulation of chain of quenches on toroidal HTS-SMES taking account of thermal and electromagnetic characteristics

NASA Astrophysics Data System (ADS)

Oga, Y.; Noguchi, S.; Igarashi, H.

When a temperature rise occurs at a local area inside a coil of toroidal HTS-SMES by any reason, a temperature hotspot which results in a thermal runaway appears at the local area. Subsequently, after appearing the local normal zone in the HTS coil, the transport current of the HTS coil decrease since the resistance of HTS coil appears and the current partially flows into a parallel-connecting shunt resistance. However, if the transport current of the normal-transitioned HTS coil is hardly changed, the temperature on the hotspot would rise more and then the normal zone would spread rapidly. It may cause a serious accident due to high stored energy. Therefore, using the numerical simulation, we have investigated the behaviors of the coil current, the critical current, and the temperature in the superconducting element coils of HTS-SMES. Consequently, the temperature of the superconducting element coils rises up extremely when a large heat is generated at a certain area of one of them by any reason. Moreover, there is a possibility that the shunt resister hardly functions for protection since the coil is burned out due to high inductances and low resistance of the superconducting element coil.

Evaluation of high temperature capacitor dielectrics

NASA Astrophysics Data System (ADS)

Hammoud, Ahmad N.; Myers, Ira T.

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Evaluation of high temperature capacitor dielectrics

NASA Technical Reports Server (NTRS)

Hammoud, Ahmad N.; Myers, Ira T.

1992-01-01

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE PAGES

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.; ...

2017-12-09

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Al 0.85Ga 0.15N/Al 0.70Ga 0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Klein, Brianna A.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.7 in the channel have been built and evaluated across the -50°C to +200°C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ~2.8 V, with a modest -2.2 V threshold voltage. A very large I on/I off current ratio, of 8 × 10 9 was demonstrated. A near idealmore » subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from -50°C to +50°C and became nearly linear at temperatures above 100°C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage.« less

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry D., Jr.

2004-01-01

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Transient Response of Arc Temperature and Iron Vapor Concentration Affected by Current Frequency with Iron Vapor in Pulsed Arc

NASA Astrophysics Data System (ADS)

Tanaka, Tatsuro; Maeda, Yoshifumi; Yamamoto, Shinji; Iwao, Toru

2016-10-01

TIG arc welding is chemically a joining technology with melting the metallic material and it can be high quality. However, this welding should not be used in high current to prevent cathode melting. Thus, the heat transfer is poor. Therefore, the deep penetration cannot be obtained and the weld defect sometimes occurs. The pulsed arc welding has been used for the improvement of this defect. The pulsed arc welding can control the heat flux to anode. The convention and driving force in the weld pool are caused by the arc. Therefore, it is important to grasp the distribution of arc temperature. The metal vapor generate from the anode in welding. In addition, the pulsed current increased or decreased periodically. Therefore, the arc is affected by such as a current value and current frequency, the current rate of increment and the metal vapor. In this paper, the transient response of arc temperature and the iron vapor concentration affected by the current frequency with iron vapor in pulsed arc was elucidated by the EMTF (ElectroMagnetic Thermal Fluid) simulation. As a result, the arc temperature and the iron vapor were transient response as the current frequency increase. Thus, the temperature and the electrical conductivity decreased. Therefore, the electrical field increased in order to maintain the current continuity. The current density and electromagnetic force increased at the axial center. In addition, the electronic flow component of the heat flux increased at the axial center because the current density increased. However, the heat conduction component of the heat flux decreased.

Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Euihan; Hwang, Gwangseok; Chung, Jaehun

2015-01-26

Performance degradation resulting from efficiency droop during high-power operation is a critical problem in the development of high-efficiency light-emitting diodes (LEDs). In order to resolve the efficiency droop and increase the external quantum efficiency of LEDs, the droop's origin should be identified first. To experimentally investigate the cause of efficiency droop, we used null-point scanning thermal microscopy to quantitatively profile the temperature distribution on the cross section of the epi-layers of an operating GaN-based vertical LED with nanoscale spatial resolution at four different current densities. The movement of temperature peak towards the p-GaN side as the current density increases suggestsmore » that more heat is generated by leakage current than by Auger recombination. We therefore suspect that at higher current densities, current leakage becomes the dominant cause of the droop problem.« less

Candidate Materials Evaluated for a High-Temperature Stirling Convertor Heater Head

NASA Technical Reports Server (NTRS)

Bowman, Randy R.; Ritzert, Frank J.

2005-01-01

The Department of Energy and NASA have identified Stirling Radioisotope Generators (SRGs) as a candidate power system for use on long-duration, deep-space science missions and Mars rovers. One of the developments planned for an upgraded version of the current SRG design is to achieve higher efficiency by increasing the overall operating temperature of the system. Currently, the SRG operates with a heater head temperature of 650 C and is fabricated from the nickel-base superalloy 718. The current operating temperature is at the limit of alloy 718 s capability, and any planned increase in temperature will be contingent on identifying a more capable material from which to fabricate the heater head. To this end, personnel at the NASA Glenn Research Center are evaluating advanced materials for a high-temperature heater head to allow a higher convertor temperature ratio and, thus, increase the system efficiency. A generic list of properties that were used to screen the candidate materials follows: (1) creep, (2) fabricability, (3) helium gas containment, (4) long-term stability and compatibility, (5) ability to form a hermetical closeout seal, and (6) ductility and toughness.

Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

NASA Astrophysics Data System (ADS)

Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

2016-09-01

In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

Second-Generation High-Temperature Superconductor Wires for the Electric Power Grid

NASA Astrophysics Data System (ADS)

Malozemoff, A. P.

2012-08-01

Superconductors offer major advantages for the electric power grid, including high current and power capacity, high efficiency arising from the lossless current flow, and a unique current-limiting functionality arising from a superconductor-to-resistive transition. These advantages can be brought to bear on equipment such as underground power cables, fault current limiters, rotating machinery, transformers, and energy storage. The first round of significant commercial-scale superconductor power-equipment demonstrations, carried out during the past decade, relied on a first-generation high-temperature superconductor (HTS) wire. However, during the past few years, with the recent commercial availability of high-performance second-generation HTS wires, power-equipment demonstrations have increasingly been carried out with these new wires, which bring important advantages. The foundation is being laid for commercial expansion of this important technology into the power grid.

High-temperature durability considerations for HSCT combustor

NASA Technical Reports Server (NTRS)

Jacobson, Nathan S.

1992-01-01

The novel combustor designs for the High Speed Civil Transport will require high temperature materials with long term environmental stability. Higher liner temperatures than in conventional combustors and the need for reduced weight necessitates the use of advanced ceramic matrix composites. The combustor environment is defined at the current state of design, the major degradation routes are discussed for each candidate ceramic material, and where possible, the maximum use temperatures are defined for these candidate ceramics.

High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.; Gilbert, D. B.

1981-01-01

The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO2 Thin Film Fabricated by HiPIMS

PubMed Central

Lin, Tiegui; Wang, Jian; Liu, Gang; Wang, Langping; Wang, Xiaofeng; Zhang, Yufen

2017-01-01

To fabricate high-quality polycrystalline VO2 thin film with a metal–insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO2 films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO2 film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations. PMID:28772990

Dynamic High-temperature Testing of an Iridium Alloy in Compression at High-strain Rates: Dynamic High-temperature Testing

DOE PAGES

Song, B.; Nelson, K.; Lipinski, R.; ...

2014-08-21

Iridium alloys have superior strength and ductility at elevated temperatures, making them useful as structural materials for certain high-temperature applications. However, experimental data on their high-strain -rate performance are needed for understanding high-speed impacts in severe environments. Kolsky bars (also called split Hopkinson bars) have been extensively employed for high-strain -rate characterization of materials at room temperature, but it has been challenging to adapt them for the measurement of dynamic properties at high temperatures. In our study, we analyzed the difficulties encountered in high-temperature Kolsky bar testing of thin iridium alloy specimens in compression. We made appropriate modifications using themore » current high-temperature Kolsky bar technique in order to obtain reliable compressive stress–strain response of an iridium alloy at high-strain rates (300–10 000 s -1) and temperatures (750 and 1030°C). The compressive stress–strain response of the iridium alloy showed significant sensitivity to both strain rate and temperature.« less

Polarization behaviour of polyvinylidenefluoride-polysulfone (PVDF: PSF) blends under high field and high temperature condition

NASA Astrophysics Data System (ADS)

Shrivas, Sandhya; Patel, Swarnim; Dubey, R. K.; Keller, J. M.

2018-05-01

Thermally stimulated discharge currents of PVDF: PSF blend samples in ratio 80:20 and 95:05 prepared by the solution cast technique have been studied as a function of polarizing field and polarizing temperature, the temperature corresponding to a peak in TSDC is found to be independent of polarizing field but dependent on the polarizing temperature.

High electric field conduction in low-alkali boroaluminosilicate glass

NASA Astrophysics Data System (ADS)

Dash, Priyanka; Yuan, Mengxue; Gao, Jun; Furman, Eugene; Lanagan, Michael T.

2018-02-01

Electrical conduction in silica-based glasses under a low electric field is dominated by high mobility ions such as sodium, and there is a transition from ionic transport to electronic transport as the electric field exceeds 108 V/m at low temperatures. Electrical conduction under a high electric field was investigated in thin low-alkali boroaluminosilicate glass samples, showing nonlinear conduction with the current density scaling approximately with E1/2, where E is the electric field. In addition, thermally stimulated depolarization current (TSDC) characterization was carried out on room-temperature electrically poled glass samples, and an anomalous discharging current flowing in the same direction as the charging current was observed. High electric field conduction and TSDC results led to the conclusion that Poole-Frenkel based electronic transport occurs in the mobile-cation-depleted region adjacent to the anode, and accounts for the observed anomalous current.

High-frequency large-amplitude oscillations of a non-isothermal N/S boundary

NASA Astrophysics Data System (ADS)

Bezuglyj, A. I.; Shklovskij, V. A.

2016-10-01

Within the framework of a phenomenological approach based on the heat balance equation and the current dependence of the critical temperature of the superconductor, the effect of high-frequency current of large amplitude and arbitrary waveform on the non-isothermal balance of an oscillating N/S interface in a long superconductor was studied. Self-consistent average temperature field of the rapidly oscillating non-isothermal N/S boundary (heat kink) was introduced, which allowed us to go beyond the well-known concept of mean-square heating and consider the effect of the current waveform. With regard to experiments on the effects of high-power microwave radiation on the current-voltage (IV) characteristics of superconducting films, their classification was performed and the families of IV curves of inhomogeneous superconductors carrying a current containing a high-frequency component of large amplitude. Several IV curves exhibited a hysteresis of thermal nature.

EPA AND ERDA HIGH-TEMPERATURE/HIGH-PRESSURE PARTICULATE CONTROL PROGRAMS

EPA Science Inventory

The report describes and compares current projects sponsored by EPA and the U.S. Energy Research and Development Administration (ERDA), relating to the control of particulate matter in fuel gas streams at high temperatures (1000 to 2000F) and high pressures (5 atm and greater). T...

Analysis of the high-temperature particulate collection problem

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razgaitis, R.

1977-10-01

Particulate agglomeration and separation at high temperatures and pressures are examined, with particular emphasis on the unique features of the direct-cycle application of fluidized-bed combustion. The basic long-range mechanisms of aerosol separation are examined, and the effects of high temperature and high pressure on usable collection techniques are assessed. Primary emphasis is placed on those avenues that are not currently attracting widespread research. The high-temperature, particulate-collection problem is surveyed, together with the peculiar requirements associated with operation of turbines with particulate-bearing gas streams. 238 references.

CO2 detection using polyethylenimine/starch functionalized AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Chang, C. Y.; Kang, B. S.; Wang, H. T.; Ren, F.; Wang, Y. L.; Pearton, S. J.; Dennis, D. M.; Johnson, J. W.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.

2008-06-01

AlGaN /GaN high electron mobility transistors (HEMTs) functionalized with polyethylenimine/starch were used for detecting CO2 with a wide dynamic range of 0.9%-50% balanced with nitrogen at temperatures from 46to220°C. Higher detection sensitivity to CO2 gas was achieved at higher testing temperatures. At a fixed source-drain bias voltage of 0.5V, drain-source current of the functionalized HEMTs showed a sublinear correlation upon exposure to different CO2 concentrations at low temperature. The superlinear relationship was at high temperature. The sensor exhibited a reversible behavior and a repeatable current change of 32 and 47μA with the introduction of 28.57% and 37.5% CO2 at 108°C, respectively.

Very low threshold-current temperature sensitivity in constricted double-heterojunction AlGaAs lasers

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.; Gilbert, D. B.; Ettenberg, M.

1981-01-01

The temperature dependence of threshold currents in constricted double-heterojunction diode lasers with strong lateral mode confinement is found to be significantly milder than for other types of lasers. The threshold-current relative variations with ambient temperature are typically two to three times less than for other devices of CW-operation capability. Over the interval 10-70 C the threshold currents fit the empirical exponential law exp/(T2-T1)/T0/ with T0 values in the 240-375 C range in pulsed operation, and in the 200-310 C range in CW operation. The external differential quantum efficiency and the mode far-field pattern near threshold are virtually invariant with temperature. The possible causes of high-T0 behavior are analyzed, and a new phenomenon - temperature-dependent current focusing - is presented to explain the results.

Ni-base superalloy powder-processed porous layer for gas cooling in extreme environments

DOE PAGES

White, Emma M. H.; Heidloff, Andrew J.; Byrd, David J.; ...

2016-05-26

Extreme high temperature conditions demand novel solutions for hot gas filters and coolant access architectures, i.e., porous layers on exposed components. These high temperatures, for example in current turbine engines, are at or exceeding current material limits for high temperature oxidation/corrosion, creep resistance, and, even, melting temperature. Thus novel blade designs allowing greater heat removal are required to maintain airfoil temperatures below melting and/ or rapid creep deformation limits. Gas atomized Ni-base superalloy powders were partially sintered into porous layers to allow full-surface, transpirational cooling of the surface of airfoils. Furthermore, these powder-processed porous layers were fully characterized for surface,more » morphology, cross-sectional microstructure, and mechanical strength characteristics. A sintering model based on pure Ni surface diffusion correlated well with the experimental results and allowed reasonable control over the partial sintering process to obtain a specified level of porosity within the porous layer.« less

Ni-base superalloy powder-processed porous layer for gas cooling in extreme environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, Emma M. H.; Heidloff, Andrew J.; Byrd, David J.

Extreme high temperature conditions demand novel solutions for hot gas filters and coolant access architectures, i.e., porous layers on exposed components. These high temperatures, for example in current turbine engines, are at or exceeding current material limits for high temperature oxidation/corrosion, creep resistance, and, even, melting temperature. Thus novel blade designs allowing greater heat removal are required to maintain airfoil temperatures below melting and/ or rapid creep deformation limits. Gas atomized Ni-base superalloy powders were partially sintered into porous layers to allow full-surface, transpirational cooling of the surface of airfoils. Furthermore, these powder-processed porous layers were fully characterized for surface,more » morphology, cross-sectional microstructure, and mechanical strength characteristics. A sintering model based on pure Ni surface diffusion correlated well with the experimental results and allowed reasonable control over the partial sintering process to obtain a specified level of porosity within the porous layer.« less

Temperature stable oxide-confined 850-nm VCSELs operating at bit rates up to 25 Gbit/s at 150°C

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Agustin, M.; Kropp, J.-R.; Shchukin, V. A.; Kalosha, V. P.; Chi, K. L.; Khan, Z.; Shi, J. W.; Ledentsov, N. N.

2018-02-01

New applications in industrial, automotive and datacom applications require vertical-cavity surface-emitting lasers (VCSELs) operating at very high ambient temperatures at ultrahigh speed. We discuss issues related to high temperature performance of the VCSELs including temperature response and spectral properties. The influence of the gain-to-cavity wavelength detuning on temperature performance and spectral width of the VCSELs is discussed. Performance of the oxide-confined 850 nm VCSELs with increased temperature stability capable of operating at bit rates up to 25 Gbit/s at heat sink temperature of 150°C and 35Gbit/s at 130°C. Furthermore, opposite to previous studies of VCSELs with large gain-to-cavity detuning, which demonstrated strongly increased spectral width and a strong redistribution of the mode intensities upon current increase. VCSELs demonstrated in this work show good reproducibility of a narrow spectrum in a wide range of currents and temperatures. Such performance strongly improves the transmission distance over multi-mode fiber and can reduce mode partition noise during high speed operation.

Measurements of the reverse current of highly irradiated silicon sensors to determine the effective energy and current related damage rate

NASA Astrophysics Data System (ADS)

Wiehe, Moritz; Wonsak, S.; Kuehn, S.; Parzefall, U.; Casse, G.

2018-01-01

The reverse current of irradiated silicon sensors leads to self heating of the sensor and degrades the signal to noise ratio of a detector. Precise knowledge of the expected reverse current during detector operation is crucial for planning and running experiments in High Energy Physics. The dependence of the reverse current on sensor temperature and irradiation fluence is parametrized by the effective energy and the current related damage rate, respectively. In this study 18 n-in-p mini silicon strip sensors from companies Hamamatsu Photonics and Micron Semiconductor Ltd. were deployed. Measurements of the reverse current for different bias voltages were performed at temperatures of -32 ° C, -27 ° C and -23 ° C. The sensors were irradiated with reactor neutrons in Ljubljana to fluences ranging from 2 × 1014neq /cm2 to 2 × 1016neq /cm2. The measurements were performed directly after irradiation and after 10 and 30 days of room temperature annealing. The aim of the study presented in this paper is to investigate the reverse current of silicon sensors for high fluences of up to 2 × 1016neq /cm2 and compare the measurements to the parametrization models.

Stable superconducting magnet. [high current levels below critical temperature

NASA Technical Reports Server (NTRS)

Boom, R. W. (Inventor)

1967-01-01

Operation of a superconducting magnet is considered. A method is described for; (1) obtaining a relatively high current in a superconducting magnet positioned in a bath of a gas refrigerant; (2) operating a superconducting magnet at a relatively high current level without training; and (3) operating a superconducting magnet containing a plurality of turns of a niobium zirconium wire at a relatively high current level without training.

A computational fluid dynamics simulation of high- and low-current arcs in self-blast circuit breakers

NASA Astrophysics Data System (ADS)

Claessens, M.; Möller, K.; Thiel, H. G.

1997-07-01

Computational fluid dynamics calculations for high- and low-current arcs in an interrupter of the self-blast type have been performed. The mixing process of the hot PTFE cloud with the cold 0022-3727/30/13/011/img6 in the pressure chamber is strongly inhomogeneous. The existence of two different species has been taken into account by interpolation of the material functions according to their mass fraction in each grid cell. Depending on the arcing time, fault current and interrupter geometry, blow temperatures of up to 2000 K have been found. The simulation results for a decaying arc immediately before current zero yield a significantly reduced arc cooling at the stagnation point for high blow temperatures.

Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2

NASA Astrophysics Data System (ADS)

Encomendero, Jimy; Yan, Rusen; Verma, Amit; Islam, S. M.; Protasenko, Vladimir; Rouvimov, Sergei; Fay, Patrick; Jena, Debdeep; Xing, Huili Grace

2018-03-01

We report the generation of room temperature microwave oscillations from GaN/AlN resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling heterostructure grown by molecular beam epitaxy on freestanding GaN substrates comprises a thin GaN quantum well embedded between two AlN tunneling barriers. The room temperature current-voltage characteristics exhibit a record-high maximum peak current density of ˜220 kA/cm2. When biased within the negative differential conductance region, microwave oscillations are measured with a fundamental frequency of ˜0.94 GHz, generating an output power of ˜3.0 μW. Both the fundamental frequency and the output power of the oscillator are limited by the external biasing circuit. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is predicted to be ˜200 GHz. This work represents a significant step towards microwave power generation enabled by resonant tunneling transport, an ultra-fast process that goes beyond the limitations of current III-Nitride high electron mobility transistors.

High-temperature electronics

NASA Technical Reports Server (NTRS)

Seng, Gary T.

1987-01-01

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Doubling the critical current density in superconducting FeSe 0.5Te 0.5 thin films by low temperature oxygen annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Cheng; Si, Weidong; Li, Qiang

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2. In-field performance is also dramatically enhanced.more » In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

Doubling the critical current density in superconducting FeSe 0.5Te 0.5 thin films by low temperature oxygen annealing

DOE PAGES

Zhang, Cheng; Si, Weidong; Li, Qiang

2016-11-14

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c, low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c, particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2. In-field performance is also dramatically enhanced.more » In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.« less

Probes for investigating the effect of magnetic field, field orientation, temperature and strain on the critical current density of anisotropic high-temperature superconducting tapes in a split-pair 15 T horizontal magnet.

PubMed

Sunwong, P; Higgins, J S; Hampshire, D P

2014-06-01

We present the designs of probes for making critical current density (Jc) measurements on anisotropic high-temperature superconducting tapes as a function of field, field orientation, temperature and strain in our 40 mm bore, split-pair 15 T horizontal magnet. Emphasis is placed on the design of three components: the vapour-cooled current leads, the variable temperature enclosure, and the springboard-shaped bending beam sample holder. The vapour-cooled brass critical-current leads used superconducting tapes and in operation ran hot with a duty cycle (D) of ~0.2. This work provides formulae for optimising cryogenic consumption and calculating cryogenic boil-off, associated with current leads used to make J(c) measurements, made by uniformly ramping the current up to a maximum current (I(max)) and then reducing the current very quickly to zero. They include consideration of the effects of duty cycle, static helium boil-off from the magnet and Dewar (b'), and the maximum safe temperature for the critical-current leads (T(max)). Our optimized critical-current leads have a boil-off that is about 30% less than leads optimized for magnet operation at the same maximum current. Numerical calculations show that the optimum cross-sectional area (A) for each current lead can be parameterized by LI(max)/A = [1.46D(-0.18)L(0.4)(T(max) - 300)(0.25D(-0.09)) + 750(b'/I(max))D(10(-3)I(max)-2.87b') × 10⁶ A m⁻¹ where L is the current lead's length and the current lead is operated in liquid helium. An optimum A of 132 mm(2) is obtained when I(max) = 1000 A, T(max) = 400 K, D = 0.2, b' = 0.3 l h(-1) and L = 1.0 m. The optimized helium consumption was found to be 0.7 l h(-1). When the static boil-off is small, optimized leads have a boil-off that can be roughly parameterized by: b/I(max)  ≈ (1.35 × 10(-3))D(0.41) l h(‑1) A(-1). A split-current-lead design is employed to minimize the rotation of the probes during the high current measurements in our high-field horizontal magnet. The variable-temperature system is based on the use of an inverted insulating cup that operates above 4.2 K in liquid helium and above 77.4 K in liquid nitrogen, with a stability of ±80 mK to ±150 mK. Uniaxial strains of -1.4% to 1.0% can be applied to the sample, with a total uncertainty of better than ±0.02%, using a modified bending beam apparatus which includes a copper beryllium springboard-shaped sample holder.

Coastal circulation and sediment dynamics along West Maui, Hawaii; PART IV: measurements of waves, currents, temperature, salinity and turbidity in Honolua Bay, Northwest Maui: 2003-2004

USGS Publications Warehouse

Storlazzi, Curt D.; Presto, M. Kathy

2005-01-01

High-resolution measurements of waves, currents, water levels, temperature, salinity and turbidity were made in Honolua Bay, northwest Maui, Hawaii, during 2003 and 2004 to better understand coastal dynamics in coral reef habitats. Measurements were acquired through two different collection methods. Two hydrographic survey cruises were conducted to acquire spatially-extensive, but temporally-limited, three-dimensional measurements of currents, temperature, salinity and turbidity in the winter and summer of 2003. From mid 2003 through early 2004, a bottom-mounted instrument package was deployed in a water depth of 10 m to collect long-term, single-point high-resolution measurements of waves, currents, water levels, temperature, salinity and turbidity. The purpose of these measurements was to collect hydrographic data to learn how waves, currents and water column properties such as water temperature, salinity and turbidity vary spatially and temporally in a near-shore coral reef system adjacent to a major stream drainage. These measurements support the ongoing process studies being conducted as part of the U.S. Geological Survey (USGS) Coastal and Marine Geology Program's Coral Reef Project; the ultimate goal is to better understand the transport mechanisms of sediment, larvae, pollutants and other particles in coral reef settings. This report, the final part in a series, describes data acquisition, processing and analysis. Previous reports provided data and results on: Long-term measurements of currents, temperature, salinity and turbidity off Kahana (PART I), the spatial structure of currents, temperature, salinity and suspended sediment along West Maui (PART II), and flow and coral larvae and sediment dynamics during the 2003 summer spawning season (PART III).

Optimization of physicochemical characteristics of a lithium anode interface for high-efficiency cycling: an effect of electrolyte temperature

NASA Astrophysics Data System (ADS)

Ishikawa, Masashi; Tasaka, Yuko; Yoshimoto, Nobuko; Morita, Masayuki

Precycling of lithium (Li) metal on a nickel substrate at a low-temperature (-20°C) in propylene carbonate (PC) mixed with dimethyl carbonate (DMC) and Li hexafluorophosphate (LiPF 6) (LiPF 6-PC/DMC) enhanced Li cycleability in the subsequent cycles at a room temperature (25°C). In LiPF 6-PC/DMC, not only the low-temperature precycling in the initial 10 cycles was effective in the improvement of Li cycle life but also the first low-temperature Li deposition followed by room temperature cycling enhanced the Li cycle life. Such a precycling effect was observed with various current densities at the initial Li deposition and the subsequent cycling. When the current density of the cycling was high, improved cycling efficiency was observed and the efficiency of the Li electrode undergoing the precycling was close to that at a constant temperature of -20°C.

Lithium thionyl chloride high rate discharge

NASA Technical Reports Server (NTRS)

Klinedinst, K. A.

1980-01-01

Improvements in high rate lithium thionyl chloride power technology achieved by varying the electrolyte composition, operating temperature, cathode design, and cathode composition are discussed. Discharge capacities are plotted as a function of current density, cell voltage, and temperature.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, B.; Nelson, K.; Lipinski, R.

Iridium alloys have superior strength and ductility at elevated temperatures, making them useful as structural materials for certain high-temperature applications. However, experimental data on their high-strain -rate performance are needed for understanding high-speed impacts in severe environments. Kolsky bars (also called split Hopkinson bars) have been extensively employed for high-strain -rate characterization of materials at room temperature, but it has been challenging to adapt them for the measurement of dynamic properties at high temperatures. In our study, we analyzed the difficulties encountered in high-temperature Kolsky bar testing of thin iridium alloy specimens in compression. We made appropriate modifications using themore » current high-temperature Kolsky bar technique in order to obtain reliable compressive stress–strain response of an iridium alloy at high-strain rates (300–10 000 s -1) and temperatures (750 and 1030°C). The compressive stress–strain response of the iridium alloy showed significant sensitivity to both strain rate and temperature.« less

High-temperature ductility of electro-deposited nickel

NASA Technical Reports Server (NTRS)

Dini, J. W.; Johnson, H. R.

1977-01-01

Work done during the past several months on high temperature ductility of electrodeposited nickel is summarized. Data are presented which show that earlier measurements made at NASA-Langley erred on the low side, that strain rate has a marked influence on high temperature ductility, and that codeposition of a small amount of manganese helps to improve high temperature ductility. Influences of a number of other factors on nickel properties were also investigated. They included plating solution temperature, current density, agitation, and elimination of the wetting agent from the plating solution. Repair of a large nozzle section by nickel plating is described.

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

NASA Technical Reports Server (NTRS)

Curtis, H. B.; Hart, R. E., Jr.

1982-01-01

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

Investigation of transient temperature's influence on damage of high-speed sliding electrical contact rail surface

NASA Astrophysics Data System (ADS)

Zhang, Yuyan; Sun, Shasha; Guo, Quanli; Yang, Degong; Sun, Dongtao

2016-11-01

In the high speed sliding electrical contact with large current, the temperature of contact area rises quickly under the coupling action of the friction heating, the Joule heating and electric arc heating. The rising temperature seriously affects the conductivity of the components and the yield strength of materials, as well affects the contact state and lead to damage, so as to shorten the service life of the contact elements. Therefore, there is vital significance to measure the temperature accurately and investigate the temperature effect on damage of rail surface. Aiming at the problem of components damage in high speed sliding electrical contact, the transient heat effect on the contact surface was explored and its influence and regularity on the sliding components damage was obtained. A kind of real-time temperature measurement method on rail surface of high speed sliding electrical contact is proposed. Under the condition of 2.5 kA current load, based on the principle of infrared radiation non-contact temperature sensor was used to measure the rail temperature. The dynamic distribution of temperature field was obtained through the simulation analysis, further, the connection between temperature changes and the rail surface damage morphology, the damage volume was analyzed and established. Finally, the method to reduce rail damage and improve the life of components by changing the temperature field was discussed.

High-current-density electrodeposition using pulsed and constant currents to produce thick CoPt magnetic films on silicon substrates

NASA Astrophysics Data System (ADS)

Ewing, Jacob; Wang, Yuzheng; Arnold, David P.

2018-05-01

This paper investigates methods for electroplating thick (>20 μm), high-coercivity CoPt films using high current densities (up to 1 A/cm2) and elevated bath temperatures (70 °C). Correlations are made tying current-density and temperature process parameters with plating rate, elemental ratio and magnetic properties of the deposited CoPt films. It also investigates how pulsed currents can increase the plating rate and film to substrate adhesion. Using 500 mA/cm2 and constant current, high-quality, dense CoPt films were successfully electroplated up to 20 μm thick in 1 hr on silicon substrates (0.35 μm/min plating rate). After standard thermal treatment (675°C, 30 min) to achieve the ordered L10 crystalline phase, strong magnetic properties were measured: coercivities up 850 kA/m, remanences >0.5 T, and maximum energy products up to 46 kJ/m3.

Copper Alloy For High-Temperature Uses

NASA Technical Reports Server (NTRS)

Dreshfield, Robert L.; Ellis, David L.; Michal, Gary

1994-01-01

Alloy of Cu/8Cr/4Nb (numbers indicate parts by atom percent) improved over older high-temperature copper-based alloys in that it offers enhanced high temperature strength, resistance to creep, and ductility while retaining most of thermal conductivity of pure copper; in addition, alloy does not become embrittled upon exposure to hydrogen at temperatures as high as 705 degrees C. Designed for use in presence of high heat fluxes and active cooling; for example, in heat exchangers in advanced aircraft and spacecraft engines, and other high-temperature applications in which there is need for such material. High conductivity and hardness of alloy exploited in welding electrodes and in high-voltage and high-current switches and other applications in which wear poses design problem.

Current activities in standardization of high-temperature, low-cycle-fatigue testing techniques in the United States

NASA Technical Reports Server (NTRS)

Verrilli, Michael J.; Ellis, J. Rodney; Swindeman, Robert W.

1990-01-01

The American Society for Testing and Materials (ASTM) standard E606-80 is the most often used recommended testing practice for low-cycle-fatigue (LCF) testing in the United States. The standard was first adopted in 1977 for LCF testing at room temperature and was modified in 1980 to include high-temperature testing practices. Current activity within ASTM is aimed at extending the E606-80 recommended practices to LCF under thermomechanical conditions, LCF in high-pressure hydrogen, and LCF in metal-matrix composite materials. Interlaboratory testing programs conducted to generate a technical base for modifying E606-80 for the aforementioned LCF test types are discussed.

Supercapacitor Operating At 200 Degrees Celsius

PubMed Central

Borges, Raquel S.; Reddy, Arava Leela Mohana; Rodrigues, Marco-Tulio F.; Gullapalli, Hemtej; Balakrishnan, Kaushik; Silva, Glaura G.; Ajayan, Pulickel M.

2013-01-01

The operating temperatures of current electrochemical energy storage devices are limited due to electrolyte degradation and separator instability at higher temperatures. Here we demonstrate that a tailored mixture of materials can facilitate operation of supercapacitors at record temperatures, as high as 200°C. Composite electrolyte/separator structures made from naturally occurring clay and room temperature ionic liquids, with graphitic carbon electrodes, show stable supercapacitor performance at 200°C with good cyclic stability. Free standing films of such high temperature composite electrolyte systems can become versatile functional membranes in several high temperature energy conversion and storage applications. PMID:23999206

Bring on the heat

NASA Astrophysics Data System (ADS)

Schierning, Gabi

2018-02-01

One third of industrial processes occur at high temperatures above 1300 K, but current methods of waste heat recovery at these temperatures are limited. Now, reduced graphene oxide is shown to be a highly efficient and reliable thermoelectric material up to 3000 K.

Two-dimensional hybrid simulations of kinetic plasma turbulence: Current and vorticity vs proton temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franci, Luca; INFN-Sezione di Firenze, Via G. Sansone 1, I-50019 Sesto F.no; Hellinger, Petr, E-mail: petr.hellinger@asu.cas.cz

2016-03-25

Proton temperature anisotropies between the directions parallel and perpendicular to the mean magnetic field are usually observed in the solar wind plasma. Here, we employ a high-resolution hybrid particle-in-cell simulation in order to investigate the relation between spatial properties of the proton temperature and the peaks in the current density and in the flow vorticity. Our results indicate that, although regions where the proton temperature is enhanced and temperature anisotropies are larger correspond approximately to regions where many thin current sheets form, no firm quantitative evidence supports the idea of a direct causality between the two phenomena. On the othermore » hand, quite a clear correlation between the behavior of the proton temperature and the out-of-plane vorticity is obtained.« less

Report on FY15 alloy 617 code rules development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sham, Sam; Jetter, Robert I; Hollinger, Greg

2015-09-01

Due to its strength at very high temperatures, up to 950°C (1742°F), Alloy 617 is the reference construction material for structural components that operate at or near the outlet temperature of the very high temperature gas-cooled reactors. However, the current rules in the ASME Section III, Division 5 Subsection HB, Subpart B for the evaluation of strain limits and creep-fatigue damage using simplified methods based on elastic analysis have been deemed inappropriate for Alloy 617 at temperatures above 650°C (1200°F) (Corum and Brass, Proceedings of ASME 1991 Pressure Vessels and Piping Conference, PVP-Vol. 215, p.147, ASME, NY, 1991). The rationalemore » for this exclusion is that at higher temperatures it is not feasible to decouple plasticity and creep, which is the basis for the current simplified rules. This temperature, 650°C (1200°F), is well below the temperature range of interest for this material for the high temperature gas-cooled reactors and the very high temperature gas-cooled reactors. The only current alternative is, thus, a full inelastic analysis requiring sophisticated material models that have not yet been formulated and verified. To address these issues, proposed code rules have been developed which are based on the use of elastic-perfectly plastic (EPP) analysis methods applicable to very high temperatures. The proposed rules for strain limits and creep-fatigue evaluation were initially documented in the technical literature (Carter, Jetter and Sham, Proceedings of ASME 2012 Pressure Vessels and Piping Conference, papers PVP 2012 28082 and PVP 2012 28083, ASME, NY, 2012), and have been recently revised to incorporate comments and simplify their application. Background documents have been developed for these two code cases to support the ASME Code committee approval process. These background documents for the EPP strain limits and creep-fatigue code cases are documented in this report.« less

Thermodynamics and Transport Phenomena in High Temperature Steam Electrolysis Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

James E. O'Brien

2012-03-01

Hydrogen can be produced from water splitting with relatively high efficiency using high temperature electrolysis. This technology makes use of solid-oxide cells, running in the electrolysis mode to produce hydrogen from steam, while consuming electricity and high temperature process heat. The overall thermal-to-hydrogen efficiency for high temperature electrolysis can be as high as 50%, which is about double the overall efficiency of conventional low-temperature electrolysis. Current large-scale hydrogen production is based almost exclusively on steam reforming of methane, a method that consumes a precious fossil fuel while emitting carbon dioxide to the atmosphere. An overview of high temperature electrolysis technologymore » will be presented, including basic thermodynamics, experimental methods, heat and mass transfer phenomena, and computational fluid dynamics modeling.« less

Temperature management of photo cathodes at MAMI and MESA

NASA Astrophysics Data System (ADS)

Aulenbacher, K.; Friederich, S.; Tyukin, V.

2018-05-01

Production of highly polarized electron current is limited by cathode heating which leads to the destruction of the active layer. For the new electron accelerator MESA a more efficient solution for the cathode cooling problem is required, with the goal to achieve acceptable temperatures at an incident power of about 1 Watt. The current status of temperature management of photo cathodes at MAMI and MESA is presented.

The operation principle of the well in quantum dot stack infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jheng-Han; Wu, Zong-Ming; Liao, Yu-Min

2013-12-28

The well in the quantum dot stack infrared photodetector (WD-QDIP) is proposed which can be operated at high temperature ∼230 K. The operation principle of this device is investigated, including the carrier transport and the enhancement in the photocurrent. The WD-QDIPs with different well numbers are fabricated to study the mechanisms. It is realized that the carrier transport from the emitter to the collector in traditional quantum dot infrared photodetectors consists of two channels deduced from current-voltage characteristics and dark current activation energy at different temperatures. At temperatures below 77 K, the current transports through the InAs quantum dot channel, whereas atmore » temperatures higher than 77 K, the current is dominated by the GaAs leakage channel. In addition, the non-equilibrium situation at low temperatures is also observed owing to the presence of photovoltaic phenomenon. The carrier distribution inside the QDs is simulated to investigate the reasons for the increase of photocurrent. Based on the simulation and the photocurrent response, the hot carrier (electron) scattering effect by the insertion of a quantum well layer is inferred as the most probable reason that lead to the enhancement of the response and regarded as the key factor to achieve high- temperature operation.« less

A fiber-optic current sensor for aerospace applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Rose, A. H.; Tang, D.; Day, G. W.

1990-01-01

A robust, accurate, broad-band, alternating current sensor using fiber optics is being developed for space applications at power frequencies as high as 20 kHz. It can also be used in low and high voltage 60 Hz terrestrial power systems and in 400 Hz aircraft systems. It is intrinsically electromagnetic interference (EMI) immune and has the added benefit of excellent isolation. The sensor uses the Faraday effect in optical fiber and standard polarimetric measurements to sense electrical current. The primary component of the sensor is a specially treated coil of single-mode optical fiber, through which the current carrying conductor passes. Improved precision is accomplished by temperature compensation by means of signals from a novel fiber-optic temperature sensor embedded in the sensing head. The technology contained in the sensor is examined and the results of precision tests conducted at various temperatures within the wide operating range are given. The results of early EMI tests are also given.

A fiber-optic current sensor for aerospace applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Rose, A. H.; Tang, D.; Day, G. W.

1990-01-01

A robust, accurate, broadband, alternating current sensor using fiber optics is being developed for space applications at power frequencies as high as 20 kHz. It can also be used in low and high voltage 60-Hz terrestrial power systems and in 400-Hz aircraft systems. It is intrinsically electromagnetic interference (EMI) immune and has the added benefit of excellent isolation. The sensor uses the Faraday effect in optical fiber and standard polarimetric measurements to sense electrical current. The primary component of the sensor is a specially treated coil of single-mode optical fiber, through which the current carrying conductor passes. Improved precision is accomplished by temperature compensation by means of signals from a novel fiber-optic temperature sensor embedded in the sensing head. The technology used in the sensor is examined and the results of precision tests conducted at various temperatures within the wide operating range are given. The results of early EMI tests are also given.

A fiber-optic current sensor for aerospace applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Rose, A. H.; Tang, D.; Day, G. W.

1990-01-01

A robust, accurate, broadband, alternating current sensor using fiber optics is being developed for space applications at power frequencies as high as 20 kHz. It can also be used in low- and high-voltage 60-Hz terrestrial power systems and in 400-Hz aircraft systems. It is intrinsically EMI (electromagnetic interference) immune and has the added benefit of excellent isolation. The sensor uses the Faraday effect in optical fiber and standard polarimetric measurements to sense electrical current. The primary component of the sensor is a specially treated coil of single-mode optical fiber, through which the current carrying conductor passes. Improved precision is accomplished by temperature compensation by means of signals from a fiber-optic temperature sensor embedded in the sensing head. The authors report on the technology contained in the sensor and also relate the results of precision tests conducted at various temperatures within the wide operating range. The results of early EMI tests are shown.

High-temperature superconducting undulator magnets

DOE PAGES

Kesgin, Ibrahim; Kasa, Matthew; Ivanyushenkov, Yury; ...

2017-02-13

Here, this paper presents test results on a prototype superconducting undulator magnet fabricated using 15% Zr-doped rare-earth barium copper oxide high temperature superconducting (HTS) tapes. On an 11-pole magnet we demonstrate an engineering current density, J e, of more than 2.1 kA mm -2 at 4.2 K, a value that is 40% higher than reached in comparable devices wound with NbTi-wire, which is used in all currently operating superconducting undulators. A novel winding scheme enabling the continuous winding of tape-shaped conductors into the intricate undulator magnets as well as a partial interlayer insulation procedure were essential in reaching this advancemore » in performance. Currently, there are rapid advances in the performance of HTS; therefore, achieving even higher current densities in an undulator structure or/and operating it at temperatures higher than 4.2 K will be possible, which would substantially simplify the cryogenic design and reduce overall costs.« less

Advanced Materials for High Temperature, High Performance, Wide Bandgap Power Modules

NASA Astrophysics Data System (ADS)

O'Neal, Chad B.; McGee, Brad; McPherson, Brice; Stabach, Jennifer; Lollar, Richard; Liederbach, Ross; Passmore, Brandon

2016-01-01

Advanced packaging materials must be utilized to take full advantage of the benefits of the superior electrical and thermal properties of wide bandgap power devices in the development of next generation power electronics systems. In this manuscript, the use of advanced materials for key packaging processes and components in multi-chip power modules will be discussed. For example, to date, there has been significant development in silver sintering paste as a high temperature die attach material replacement for conventional solder-based attach due to the improved thermal and mechanical characteristics as well as lower processing temperatures. In order to evaluate the bond quality and performance of this material, shear strength, thermal characteristics, and void quality for a number of silver sintering paste materials were analyzed as a die attach alternative to solder. In addition, as high voltage wide bandgap devices shift from engineering samples to commercial components, passivation materials become key in preventing premature breakdown in power modules. High temperature, high dielectric strength potting materials were investigated to be used to encapsulate and passivate components internal to a power module. The breakdown voltage up to 30 kV and corresponding leakage current for these materials as a function of temperature is also presented. Lastly, high temperature plastic housing materials are important for not only discrete devices but also for power modules. As the operational temperature of the device and/or ambient temperature increases, the mechanical strength and dielectric properties are dramatically reduced. Therefore, the electrical characteristics such as breakdown voltage and leakage current as a function of temperature for housing materials are presented.

Strained layer relaxation effect on current crowding and efficiency improvement of GaN based LED

NASA Astrophysics Data System (ADS)

Aurongzeb, Deeder

2012-02-01

Efficiency droop effect of GaN based LED at high power and high temperature is addressed by several groups based on career delocalization and photon recycling effect(radiative recombination). We extend the previous droop models to optical loss parameters. We correlate stained layer relaxation at high temperature and high current density to carrier delocalization. We propose a third order model and show that Shockley-Hall-Read and Auger recombination effect is not enough to account for the efficiency loss. Several strained layer modification scheme is proposed based on the model.

Measured Attenuation of Coplanar Waveguide on 6H, p-type SiC and High Purity Semi-Insulating 4H SiC through 800 K

NASA Technical Reports Server (NTRS)

Ponchak, George E.; Schwartz, Zachary D.; Alterovitz, Samuel A.; Downey, Alan N.

2004-01-01

Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating SiC and 6H, p-type SiC is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SiC. The 4H-HPSI SiC is shown to have low attenuation and leakage currents over the entire temperature range.

The Role of Surface Protection for High-Temperature Performance of TiAl Alloys

NASA Astrophysics Data System (ADS)

Schütze, Michael

2017-12-01

In the temperature range where TiAl alloys are currently being used in jet engine and automotive industries, surface reaction with the operating environment is not yet a critical issue. Surface treatment may, however, be needed in order to provide improved abrasion resistance. Development routes currently aim at a further increase in operation temperatures in gas turbines up to 800°C and higher, and in automotive applications for turbocharger rotors, even up to 1050°C. In this case, oxidation rates may reach levels where significant metal consumption of the load-bearing cross-section can occur. Another possibly even more critical issue can be high-temperature-induced oxygen and nitrogen up-take into the metal subsurface zone with subsequent massive ambient temperature embrittlement. Solutions for these problems are based on a deliberate phase change of the metal subsurface zone by diffusion treatments and by using effects such as the halogen effect to change the oxidation mechanism at high temperatures. Other topics of relevance for the use of TiAl alloys in high-temperature applications can be high-temperature abrasion resistance, thermal barrier coatings on TiAl and surface quality in additive manufacturing, in all these cases-focusing on the role of the operation environment. This paper addresses the recent developments in these areas and the requirements for future work.

Cryocooler based test setup for high current applications

NASA Astrophysics Data System (ADS)

Pradhan, Jedidiah; Das, Nisith Kr.; Roy, Anindya; Duttagupta, Anjan

2018-04-01

A cryo-cooler based cryogenic test setup has been designed, fabricated, and tested. The setup incorporates two numbers of cryo-coolers, one for sample cooling and the other one for cooling the large magnet coil. The performance and versatility of the setup has been tested using large samples of high-temperature superconductor magnet coil as well as short samples with high current. Several un-calibrated temperature sensors have been calibrated using this system. This paper presents the details of the system along with results of different performance tests.

Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

NASA Astrophysics Data System (ADS)

Nazaruk, D. E.; Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Vasil'ev, A. P.; Gladyshev, A. G.; Pavlov, M. M.; Blokhin, A. A.; Kulagina, M. M.; Vashanova, K. A.; Zadiranov, Yu M.; Fefelov, A. G.; Ustinov, V. M.

2014-12-01

A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range.

The structure of high-temperature solar flare plasma in non-thermal flare models

NASA Technical Reports Server (NTRS)

Emslie, A. G.

1985-01-01

Analytic differential emission measure distributions have been derived for coronal plasma in flare loops heated both by collisions of high-energy suprathermal electrons with background plasma, and by ohmic heating by the beam-normalizing return current. For low densities, reverse current heating predominates, while for higher densities collisional heating predominates. There is thus a minimum peak temperature in an electron-heated loop. In contrast to previous approximate analyses, it is found that a stable reverse current can dominate the heating rate in a flare loop, especially in the low corona. Two 'scaling laws' are found which relate the peak temperature in the loop to the suprathermal electron flux. These laws are testable observationally and constitute a new diagnostic procedure for examining modes of energy transport in flaring loops.

Temperature-and field dependent characterization of a twisted stacked-tape cable

NASA Astrophysics Data System (ADS)

Barth, C.; Takayasu, M.; Bagrets, N.; Bayer, C. M.; Weiss, K.-P.; Lange, C.

2015-04-01

The twisted stacked-tape cable (TSTC) is one of the major high temperature superconductor cable concepts combining scalability, ease of fabrication and high current density making it a possible candidate as conductor for large scale magnets. To simulate the boundary conditions of such a magnets as well as the temperature dependence of TSTCs a 1.16 m long sample consisting of 40, 4 mm wide SuperPower REBCO tapes is characterized using the ‘FBI’ (force-field-current) superconductor test facility of the Institute for Technical Physics of the Karlsruhe Institute of Technology. In a first step, the magnetic background field is cycled while measuring the current carrying capabilities to determine the impact of Lorentz forces on the TSTC sample performance. In the first field cycle, the critical current of the TSTC sample is tested up to 12 T. A significant Lorentz force of up to 65.6 kN m-1 at the maximal magnetic background field of 12 T result in a 11.8% irreversible degradation of the current carrying capabilities. The degradation saturates (critical cable current of 5.46 kA at 4.2 K and 12 T background field) and does not increase in following field cycles. In a second step, the sample is characterized at different background fields (4-12 T) and surface temperatures (4.2-37.8 K) utilizing the variable temperature insert of the ‘FBI’ test facility. In a third step, the performance along the length of the sample is determined at 77 K, self-field. A 15% degradation is obtained for the central part of the sample which was within the high field region of the magnet during the in-field measurements.

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

NASA Astrophysics Data System (ADS)

Takamiya, Saburo; Sonoda, Takuji; Yamanouchi, Masahide; Fujioka, Takashi; Kohno, Masaki

1997-03-01

Theoretical expressions for thermal and electrical feedback effects are derived. These limit the power capability of a power FET and lead a device to catastrophic breakdown (source-drain burnout) when the loop gain of the former reaches unity. Field emission of thermally excited electrons at the Schottky gate plays the key role in thermal feedback, while holes being impact ionized by the drain current play a similar role in the electrical feedback. Thermal feedback is dominant in a high temperature and low drain voltage area. Electrical feedback is dominant in a high drain voltage and low temperature area. In the first area, a high junction temperature is the main factor causing the thermal runaway of the device. In the second area, the electrcal feedback increases the drain current and the temperature and gives a trigger to the thermal feedback so that it reaches unity more easily. Both effects become significant in proportion to transconductance and gate bias resistance, and cause simultaneous runaway of the gate and drain currents. The expressions of the loop gains clearly indicate the safe operating conditions for a power FET. C-band 4 W (1 chip) and 16 W (4 chip) GaAs MESFETs were used as the experimental samples. With these devices the simultaneous runaway of the gate and the drain currents, apparent dependence of the three teminal breakdown voltage on the gate bias resistance in the region dominated by electrical feedback, the rapid increase of the field emitted current at the critical temperature and clear coincidence between the measured and calculated three terminal gate currents both in the thermal feedback dominant region, etc. are demonstrated. The theory explains the experimental results well.

Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers

NASA Technical Reports Server (NTRS)

Botez, D.; Connolly, J. C.

1980-01-01

Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.

The magnitude of the magnetic field near the surface of a high-T(sub c) superconductor with a trapped flux

NASA Technical Reports Server (NTRS)

Overcash, Dan R.

1991-01-01

In 1986, much excitement was caused by the discovery of a class of materials that conducted electricity with zero resistance at temperatures above the boiling temperature of liquid nitrogen. This excitement was checked by the difficulties of manufacturing ceramics and the usefulness of high temperature superconductors that were restricted by their becoming high resistive conductors at small current densities. A lack of pinning of the magnetic field flux caused the return of high resistance as the current was increased in these materials. A study of the magnetic field near the surface of a high temperature superconductor is the first step in the search for a means of pinning the flux lines and increasing their critical current densities. The author found that a comparison between the defects in the surface of the superconductor and the magnetic field showed only a change in the field near the notch and the edge. No correlation was found between the surface grain or structure and the oscillations in the magnetic field. The observed changes in the magnetic field show resonances which may give an indication of the non-flux pinning in these superconductors. A flux pinning mechanism will increase the critical current densities; therefore, other methods of determining this field should be tried. The author proposes using a flux gate magnetometer with a detector wound on a ferrite core to measure the magnitude and direction of the magnetic field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Bo; Nelson, Kevin; Jin, Helena

Iridium alloys have been utilized as structural materials for certain high-temperature applications, due to their superior strength and ductility at elevated temperatures. The mechanical properties, including failure response at high strain rates and elevated temperatures of the iridium alloys need to be characterized to better understand high-speed impacts at elevated temperatures. A DOP-26 iridium alloy has been dynamically characterized in compression at elevated temperatures with high-temperature Kolsky compression bar techniques. However, the dynamic high-temperature compression tests were not able to provide sufficient dynamic high-temperature failure information of the iridium alloy. In this study, we modified current room-temperature Kolsky tension barmore » techniques for obtaining dynamic tensile stress-strain curves of the DOP-26 iridium alloy at two different strain rates (~1000 and ~3000 s-1) and temperatures (~750°C and ~1030°C). The effects of strain rate and temperature on the tensile stress-strain response of the iridium alloy were determined. The DOP-26 iridium alloy exhibited high ductility in stress-strain response that strongly depended on both strain rate and temperature.« less

Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers.

PubMed

Abdollahinia, A; Banyoudeh, S; Rippien, A; Schnabel, F; Eyal, O; Cestier, I; Kalifa, I; Mentovich, E; Eisenstein, G; Reithmaier, J P

2018-03-05

Static and dynamic properties of InP-based 1.55 µm quantum dot (QD) lasers were investigated. Due to the reduced size inhomogeneity and a high dot density of the newest generation of 1.55 µm QD gain materials, ridge waveguide lasers (RWG) exhibit improved temperature stability and record-high modulation characteristics. Detailed results are shown for the temperature dependence of static properties including threshold current, voltage-current characteristics, external differential efficiency and emission wavelength. Similarly, small and large signal modulations were found to have only minor dependences on temperature. Moreover, we show the impact of the active region design and the cavity length on the temperature stability. Measurements were performed in pulsed and continuous wave operation. High characteristic temperatures for the threshold current were obtained with T 0 values of 144 K (15 - 60 °C), 101 K (60 - 110 °C) and 70 K up to 180 °C for a 900-µm-long RWG laser comprising 8 QD layers. The slope efficiency in these lasers is nearly independent of temperature showing a T 1 value of more than 900 K up to 110 °C. Due to the high modal gain, lasers with a cavity length of 340 µm reached new record modulation bandwidths of 17.5 GHz at 20 °C and 9 GHz at 80 °C, respectively. These lasers were modulated at 26 GBit/s in the non-return to zero format at 80 °C and at 25 GBaud using a four-level pulse amplitude format at 21 °C.

Development of high performance refractory fibers with enhanced insulating properties and longer service lifetimes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, P.C.; DePoorter, G.L.; Munoz, D.R.

1991-02-01

We have initiated a three phase investigation of the development of high performance refractory fibers with enhanced insulating properties and longer usable lifetimes. This report presents the results of the first phase of the study, performed from Aug. 1989 through Feb. 1991, which shows that significant energy saving are possible through the use of high temperature insulating fibers that better retain their efficient insulating properties during the service lifetime of the fibers. The remaining phases of this program include the pilot scale development and then full scale production feasibility development and evaluation of enhanced high temperature refractory insulting fibers. Thismore » first proof of principle phase of the program presents a summary of the current use patterns of refractory fibers, a laboratory evaluation of the high temperature performance characteristics of selected typical refractory fibers and an analysis of the potential energy savings through the use of enhanced refractory fibers. The current use patterns of refractory fibers span a wide range of industries and high temperature furnaces within those industries. The majority of high temperature fiber applications are in furnaces operating between 2000 and 26000{degrees}F. The fibers used in furnaces operating within this range provide attractive thermal resistance and low thermal storage at reasonable cost. A series of heat treatment studies performed for this phase of the program has shown that the refractory fibers, as initially manufactured, have attractive thermal conductivities for high temperature applications but the fibers go through rapid devitrification and subsequent crystal growth upon high temperature exposure. Development of improved fibers, maintaining the favorable characteristics of the existing as-manufactured fibers, could save between 1 and 4% of the energy consumed in high temperature furnaces using refractory fibers.« less

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers.

PubMed

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A Giles; Linfield, Edmund H; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-05

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers

NASA Astrophysics Data System (ADS)

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A. Giles; Linfield, Edmund H.; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-01

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data transfer and high-precision molecular spectroscopy.

High-performance single nanowire tunnel diodes.

PubMed

Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

2010-03-10

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

Chip Scale Ultra-Stable Clocks: Miniaturized Phonon Trap Timing Units for PNT of CubeSats

NASA Technical Reports Server (NTRS)

Rais-Zadeh, Mina; Altunc, Serhat; Hunter, Roger C.; Petro, Andrew

2016-01-01

The Chip Scale Ultra-Stable Clocks (CSUSC) project aims to provide a superior alternative to current solutions for low size, weight, and power timing devices. Currently available quartz-based clocks have problems adjusting to the high temperature and extreme acceleration found in space applications, especially when scaled down to match small spacecraft size, weight, and power requirements. The CSUSC project aims to utilize dual-mode resonators on an ovenized platform to achieve the exceptional temperature stability required for these systems. The dual-mode architecture utilizes a temperature sensitive and temperature stable mode simultaneously driven on the same device volume to eliminate ovenization error while maintaining extremely high performance. Using this technology it is possible to achieve parts-per-billion (ppb) levels of temperature stability with multiple orders of magnitude smaller size, weight, and power.

Trielectrode capacitive pressure transducer

NASA Technical Reports Server (NTRS)

Coon, G. W. (Inventor)

1976-01-01

A capacitive transducer and circuit especially suited for making measurements in a high-temperature environment are described. The transducer includes two capacitive electrodes and a shield electrode. As the temperature of the transducer rises, the resistance of the insulation between the capacitive electrode decreases and a resistive current attempts to interfere with the capacitive current between the capacitive electrodes. The shield electrode and the circuit coupled there reduce the resistive current in the transducer. A bridge-type circuit coupled to the transducer ignores the resistive current and measures only the capacitive current flowing between the capacitive electrodes.

Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

PubMed

Prevosto, L; Kelly, H; Mancinelli, B

2013-12-01

This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

Deformation and crack growth response under cyclic creep conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brust, F.W. Jr.

To increase energy efficiency, new plants must operate at higher and higher temperatures. Moreover, power generation equipment continues to age and is being used far beyond its intended original design life. Some recent failures which unfortunately occurred with serious consequences have clearly illustrated that current methods for insuring safety and reliability of high temperature equipment is inadequate. Because of these concerns, an understanding of the high-temperature crack growth process is very important and has led to the following studies of the high temperature failure process. This effort summarizes the results of some recent studies which investigate the phenomenon of highmore » temperature creep fatigue crack growth. Experimental results which detail the process of creep fatigue, analytical studies which investigate why current methods are ineffective, and finally, a new approach which is based on the T{sup *}-integral and its ability to characterize the creep-fatigue crack growth process are discussed. The potential validity of this new predictive methodology is illustrated.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE PAGES

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; ...

2017-08-01

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

High Temperature Operation of Al 0.45Ga 0.55N/Al 0.30Ga 0.70 N High Electron Mobility Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.

AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that have a bandgap greater than ~3.4 eV, beyond that of GaN and SiC, and are promising candidates for RF and power applications. Long-channel Al xGa 1-xN HEMTs with x = 0.3 in the channel have been built and evaluated across the -50°C to +200°C temperature range. Room temperature drain current of 70 mA/mm, absent of gate leakage, and with a modest -1.3 V threshold voltage was measured. A very large I on/I off current ratio, greater than 10 8 was demonstrated over the entire temperaturemore » range, indicating that off-state leakage is below the measurement limit even at 200°C. Finally, combined with near ideal subthreshold slope factor that is just 1.3× higher than the theoretical limit across the temperature range, the excellent leakage properties are an attractive characteristic for high temperature operation.« less

Elevated-temperature luminescence measurements to improve spatial resolution

NASA Astrophysics Data System (ADS)

Pluska, Mariusz; Czerwinski, Andrzej

2018-01-01

Various branches of applied physics use luminescence based methods to investigate light-emitting specimens with high spatial resolution. A key problem is that luminescence signals lack all the advantages of high locality (i.e. of high spatial resolution) when structures with strong built-in electric field are measured. Such fields exist intentionally in most photonic structures, and occur unintentionally in many other materials. In this case, as a result of beam-induced current generation and its outflow, information that indicates irregularities, nonuniformities and inhomogeneities, such as defects, is lost. We show that to avoid nonlocality and enable truly local luminescence measurements, an elevated measurement temperature as high as 350 K (or even higher) is, perhaps surprisingly, advantageous. This is in contrast to a widely used approach, where cryogenic temperatures, or at least room temperature, are recommended. The elevated temperature of a specimen, together with the current outflow being limited by focused ion beam (FIB) milling, is shown to improve the spatial resolution of luminescence measurements greatly. All conclusions drawn using the example of cathodoluminescence are useful for other luminescence techniques.

UHTC Research at NASA Ames

NASA Technical Reports Server (NTRS)

Johnson, Sylvia M.

2011-01-01

For enhanced aerodynamic performance. Materials for sharp leading edges can be reusable but need different properties because of geometry and very high temperatures. Require materials with significantly higher temperature capabilities, but for short duration. Current shuttle RCC leading edge materials: T approx. 1650 C. Materials for vehicles with sharp leading edges: T>2000 C. >% Figure depicts: High Temperature at Tip and Steep Temperature Gradient. Passive cooling is simplest option to manage the intense heating on sharp leading edges.

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

PubMed

Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2016-02-01

Our paper presents a comprehensive short-circuit ruggedness evaluation and numerical investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit capability of three types of commercial 1200-V SiC MOSFETs is tested under various conditions, with case temperatures from 25 to 200 degrees C and dc bus voltages from 400 to 750 V. It is found that the commercial SiC MOSFETs can withstand short-circuit current for only several microseconds with a dc bus voltage of 750 V and case temperature of 200 degrees C. Moreover, the experimental short-circuit behaviors are compared, and analyzed through numerical thermal dynamic simulation. Specifically, an electrothermalmore » model is built to estimate the device internal temperature distribution, considering the temperature-dependent thermal properties of SiC material. Based on the temperature information, a leakage current model is derived to calculate the main leakage current components (i.e., thermal, diffusion, and avalanche generation currents). Finally, numerical results show that the short-circuit failure mechanisms of SiC MOSFETs can be thermal generation current induced thermal runaway or high-temperature-related gate oxide damage.« less

Phosphate Reactions as Mechanisms of High-Temperature Lubrication

NASA Technical Reports Server (NTRS)

Nagarajan, Anitha; Garrido, Carolina; Gatica, Jorge E.; Morales, Wilfredo

2006-01-01

One of the major problems preventing the operation of advanced gas turbine engines at higher temperatures is the inability of currently used liquid lubricants to survive at these higher temperatures under friction and wear conditions. Current state-of-the-art organic liquid lubricants rapidly degrade at temperatures above 300 C; hence some other form of lubrication is necessary. Vapor-phase lubrication is a promising new technology for high-temperature lubrication. This lubrication method employs a liquid phosphate ester that is vaporized and delivered to bearings or gears; the vapor reacts with the metal surfaces, generating a solid lubricious film that has proven very stable at high temperatures. In this study, solid lubricious films were grown on cast-iron foils in order to obtain reaction and diffusion rate data to help characterize the growth mechanism. A phenomenological mathematical model of the film deposition process was derived incorporating transport and kinetic parameters that were coupled to the experimental data. This phenomenological model can now be reliably used as a predictive and scale-up tool for future vapor-phase lubrication studies.

In-Situ Measurement of High-Temperature Proton Exchange Membrane Fuel Cell Stack Using Flexible Five-in-One Micro-Sensor

PubMed Central

Lee, Chi-Yuan; Weng, Fang-Bor; Kuo, Yzu-Wei; Tsai, Chao-Hsuan; Cheng, Yen-Ting; Cheng, Chih-Kai; Lin, Jyun-Ting

2016-01-01

In the chemical reaction that proceeds in a high-temperature proton exchange membrane fuel cell stack (HT-PEMFC stack), the internal local temperature, voltage, pressure, flow and current nonuniformity may cause poor membrane material durability and nonuniform fuel distribution, thus influencing the performance and lifetime of the fuel cell stack. In this paper micro-electro-mechanical systems (MEMS) are utilized to develop a high-temperature electrochemical environment-resistant five-in-one micro-sensor embedded in the cathode channel plate of an HT-PEMFC stack, and materials and process parameters are appropriately selected to protect the micro-sensor against failure or destruction during long-term operation. In-situ measurement of the local temperature, voltage, pressure, flow and current distributions in the HT-PEMFC stack is carried out. This integrated micro-sensor has five functions, and is favorably characterized by small size, good acid resistance and temperature resistance, quick response, real-time measurement, and the goal is being able to be put in any place for measurement without affecting the performance of the battery. PMID:27763559

In-Situ Measurement of High-Temperature Proton Exchange Membrane Fuel Cell Stack Using Flexible Five-in-One Micro-Sensor.

PubMed

Lee, Chi-Yuan; Weng, Fang-Bor; Kuo, Yzu-Wei; Tsai, Chao-Hsuan; Cheng, Yen-Ting; Cheng, Chih-Kai; Lin, Jyun-Ting

2016-10-18

In the chemical reaction that proceeds in a high-temperature proton exchange membrane fuel cell stack (HT-PEMFC stack), the internal local temperature, voltage, pressure, flow and current nonuniformity may cause poor membrane material durability and nonuniform fuel distribution, thus influencing the performance and lifetime of the fuel cell stack. In this paper micro-electro-mechanical systems (MEMS) are utilized to develop a high-temperature electrochemical environment-resistant five-in-one micro-sensor embedded in the cathode channel plate of an HT-PEMFC stack, and materials and process parameters are appropriately selected to protect the micro-sensor against failure or destruction during long-term operation. In-situ measurement of the local temperature, voltage, pressure, flow and current distributions in the HT-PEMFC stack is carried out. This integrated micro-sensor has five functions, and is favorably characterized by small size, good acid resistance and temperature resistance, quick response, real-time measurement, and the goal is being able to be put in any place for measurement without affecting the performance of the battery.

High-Operating Temperature HgCdTe: A Vision for the Near Future

NASA Astrophysics Data System (ADS)

Lee, D.; Carmody, M.; Piquette, E.; Dreiske, P.; Chen, A.; Yulius, A.; Edwall, D.; Bhargava, S.; Zandian, M.; Tennant, W. E.

2016-09-01

We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer planar hetero-junction (DLPH) detector architecture. By using an un-doped, fully depleted absorber, Teledyne's DLPH architecture can be extended for use in high operating temperatures and other applications. We assess the potential achievable performance for long wavelength infrared (LWIR) hetero-junction p-lightly-doped n or p-intrinsic- n (p-i-n) detectors based on recently reported results for 10.7 μm cutoff 1 K × 1 K focal plane arrays (FPAs) tested at temperatures down to 30 K. Variable temperature dark current measurements show that any Shockley-Read-Hall currents in the depletion region of these devices have lifetimes that are reproducibly greater than 100 ms. Under the assumption of comparable lifetimes at higher temperatures, it is predicted that fully-depleted background radiation-limited performance can be expected for 10- μm cutoff detectors from room temperature to well below liquid nitrogen temperatures, with room-temperature dark current nearly 400 times lower than predicted by Rule 07. The hetero-junction p-i-n diode is shown to have numerous other significant potential advantages including minimal or no passivation requirements for pBn-like processing, low 1/ f noise, compatibility with small pixel pitch while maintaining high modulation transfer function, low crosstalk and good quantum efficiency. By appropriate design of the FPA dewar shielding, analysis shows that dark current can theoretically be further reduced below the thermal equilibrium radiative limit. Modeling shows that background radiation-limited LWIR HgCdTe operating with f/1 optics has the potential to operate within √2 of background-limited performance at 215 K. By reducing the background radiation by 2/3 using novel shielding methods, operation with a single-stage thermo-electric-cooler may be possible. If the background radiation can be reduced by 90%, then room-temperature operation is possible.

Long-term, high-frequency current and temperature measurements along central California: Insights into upwelling/relaxation and internal waves on the inner shelf

USGS Publications Warehouse

Storlazzi, C.D.; McManus, M.A.; Figurski, J.D.

2003-01-01

Thermistor chains and acoustic Doppler current profilers were deployed at the northern and southern ends of Monterey Bay to examine the thermal and hydrodynamic structure of the inner (h ??? 20 m) shelf of central California. These instruments sampled temperature and current velocity at 2-min intervals over a 13-month period from June 2000 to July 2001. Time series of these data, in conjunction with SST imagery and CODAR sea surface current maps, helped to establish the basic hydrography for Monterey Bay. Analysis of time series data revealed that depth integrated flow at both sites was shore parallel (northwest-southeast) with net flows out of the Bay (northwest). The current and temperature records were dominated by semi-diurnal and diurnal tidal signals that lagged the surface tides by 3 h on average. Over the course of an internal tidal cycle these flows were asymmetric, with the flow during the flooding internal tide to the southeast typically lasting only one-third as long as the flow to the northwest during the ebbing internal tide. The transitions from ebb to flood were rapid and bore-like in nature; they were also marked by rapid increases in temperature and high shear. During the spring and summer, when thermal stratification was high, we observed almost 2000 high-frequency (Tp ??? 4-20 min) internal waves in packets of 8-10 following the heads of these bore-like features. Previous studies along the West Coast of the US have concluded that warm water bores and high-frequency internal waves may play a significant role in the onshore transport of larvae.

Passive control of temperature excursion and uniformity in high-energy Li-ion battery packs at high current and ambient temperature

NASA Astrophysics Data System (ADS)

Kizilel, R.; Lateef, A.; Sabbah, R.; Farid, M. M.; Selman, J. R.; Al-Hallaj, S.

A strategy for portable high-power applications with a controlled thermal environment has been developed and has demonstrated the advantage of using the novel phase change material (PCM) thermal management systems over conventional active cooling systems. A passive thermal management system using PCM for Li-ion batteries is tested for extreme conditions, such as ambient temperature of 45 °C and discharge rate of 2.08 C-rate (10 A). Contrary to Li-ion packs without thermal management system, high-energy packs with PCM are discharged safely at high currents and degrading rate of capacity of the Li-ion packs lowered by half. Moreover, the compactness of the packs not only decreases the volume occupied by the packs and its associated complex cooling system, but also decreases the total weight for large power application.

Probing Temperature Inside Planar SOFC Short Stack, Modules, and Stack Series

NASA Astrophysics Data System (ADS)

Yu, Rong; Guan, Wanbing; Zhou, Xiao-Dong

2017-02-01

Probing temperature inside a solid oxide fuel cell (SOFC) stack lies at the heart of the development of high-performance and stable SOFC systems. In this article, we report our recent work on the direct measurements of the temperature in three types of SOFC systems: a 5-cell short stack, a 30-cell stack module, and a stack series consisting of two 30-cell stack modules. The dependence of temperature on the gas flow rate and current density was studied under a current sweep or steady-state operation. During the current sweep, the temperature inside the 5-cell stack decreased with increasing current, while it increased significantly at the bottom and top of the 30-cell stack. During a steady-state operation, the temperature of the 5-cell stack was stable while it was increased in the 30-cell stack. In the stack series, the maximum temperature gradient reached 190°C when the gas was not preheated. If the gas was preheated and the temperature gradient was reduced to 23°C in the stack series with the presence of a preheating gas and segmented temperature control, this resulted in a low degradation rate.

Transport and contact-free investigation of REBCO thin film temperature dependent pinning landscapes

NASA Astrophysics Data System (ADS)

Sinclair, John; Jaroszynski, Jan; Hu, Xinbo; Santos, Michael

2013-03-01

Studies of the pinning mechanisms and landscapes of REBa2Cu3Ox (RE=rare earth elements) thin films have been a topic of study in recent years due to, among other reasons, their ability to introduce nonsuperconducting phases and defects. Here we will focus on REBCO thin films with BaZrO3 nanocolumns and other isotropic defects. The evolution of the dominant pinning mechanisms seems to change as a function of temperature even to the point that samples with similar critical current density properties at high temperatures can have distinctly different properties at low temperatures. Earlier work focused on the angular selectivity of the current density profile, though other properties (such as alpha values) can evolve as well. Characteristic results accentuating this evolution of current density properties will be presented. Challenges exist in evaluating these low temperature properties in high magnetic fields, therefore both transport and contact-free results were be presented to compliment the work. Support for this work is provided by the NHMFL via NSF DRM 0654118.

Intrusion of Subarctic Currents into a Perpetual Sub-zero Cold Pool Allows Recruitment and Export of Snow Crabs in the Northern Bering Sea

NASA Astrophysics Data System (ADS)

Kolts, J. M.; Lovvorn, J. R.; North, C. A.; Janout, M. A.

2016-02-01

Snow crabs (Chionoecetes opilio) are quite productive at suitable temperatures, but can also be abundant in water cold enough to depress settlement of larvae, growth, and reproduction. In much of the northern Bering Sea, bottom water temperatures are <-1°C for most or all of the year. Crab pelagic larvae prefer to settle at temperatures >0°C, so we found high densities of juveniles only where intruding warm currents deposited larvae in localized areas. After settlement, maturing crabs appeared to exhibit ontogenetic migration toward deeper, warmer water. Cold temperatures excluded key predators, but decreased fecundity by restricting females to small body size (with associated small clutches) and to breeding every 2 years. Migration to warmer water may allow females to breed annually, and to encounter more adult males needed to fertilize subsequent clutches. Because older males also emigrate, remaining adolescent males probably inseminate newly maturing females. Without localized intrusion of warmer currents, snow crabs might not persist at high densities in such cold waters. However, they are currently very abundant there, and export many pelagic larvae and adults. In this region of Arctic temperatures, the combination of localized intrusion of warm, Subarctic currents and ontogenetic migration toward warmer Subarctic waters allows this area to contribute importantly to adult crab populations in adjacent areas.

Development and Property Evaluation of Selected HfO2-Silicon and Rare Earth-Silicon Based Bond Coats and Environmental Barrier Coating Systems for SiC/SiC Ceramic Matrix Composites

NASA Technical Reports Server (NTRS)

Zhu, Dongming

2016-01-01

Ceramic environmental barrier coatings (EBC) and SiC/SiC ceramic matrix composites (CMCs) will play a crucial role in future aircraft propulsion systems because of their ability to significantly increase engine operating temperatures, improve component durability, reduce engine weight and cooling requirements. Advanced EBC systems for SiC/SiC CMC turbine and combustor hot section components are currently being developed to meet future turbine engine emission and performance goals. One of the significant material development challenges for the high temperature CMC components is to develop prime-reliant, high strength and high temperature capable environmental barrier coating bond coat systems, since the current silicon bond coat cannot meet the advanced EBC-CMC temperature and stability requirements. In this paper, advanced NASA HfO2-Si and rare earth Si based EBC bond coat EBC systems for SiC/SiC CMC combustor and turbine airfoil applications are investigated. High temperature properties of the advanced EBC systems, including the strength, fracture toughness, creep and oxidation resistance have been studied and summarized. The advanced NASA EBC systems showed some promise to achieve 1500C temperature capability, helping enable next generation turbine engines with significantly improved engine component temperature capability and durability.

HIGH TEMPERATURE SORPTION OF CESIUM AND STRONTIUM ON DISPERSED KAOLINITE POWDERS

EPA Science Inventory

Sorption of cesium and strontium on kaolinite powders was investigated as a means to minimize the emissions of these metals during certain high-temperature processes currently being developed to isolate and dispose of radiological and mixed wastes. In this work, nonradioactive aq...

3D printed high performance strain sensors for high temperature applications

NASA Astrophysics Data System (ADS)

Rahman, Md Taibur; Moser, Russell; Zbib, Hussein M.; Ramana, C. V.; Panat, Rahul

2018-01-01

Realization of high temperature physical measurement sensors, which are needed in many of the current and emerging technologies, is challenging due to the degradation of their electrical stability by drift currents, material oxidation, thermal strain, and creep. In this paper, for the first time, we demonstrate that 3D printed sensors show a metamaterial-like behavior, resulting in superior performance such as high sensitivity, low thermal strain, and enhanced thermal stability. The sensors were fabricated using silver (Ag) nanoparticles (NPs), using an advanced Aerosol Jet based additive printing method followed by thermal sintering. The sensors were tested under cyclic strain up to a temperature of 500 °C and showed a gauge factor of 3.15 ± 0.086, which is about 57% higher than that of those available commercially. The sensor thermal strain was also an order of magnitude lower than that of commercial gages for operation up to a temperature of 500 °C. An analytical model was developed to account for the enhanced performance of such printed sensors based on enhanced lateral contraction of the NP films due to the porosity, a behavior akin to cellular metamaterials. The results demonstrate the potential of 3D printing technology as a pathway to realize highly stable and high-performance sensors for high temperature applications.

High-Temperature Adhesives for Thermally Stable Aero-Assist Technologies

NASA Technical Reports Server (NTRS)

Eberts, Kenneth; Ou, Runqing

2013-01-01

Aero-assist technologies are used to control the velocity of exploration vehicles (EVs) when entering Earth or other planetary atmospheres. Since entry of EVs in planetary atmospheres results in significant heating, thermally stable aero-assist technologies are required to avoid the high heating rates while maintaining low mass. Polymer adhesives are used in aero-assist structures because of the need for high flexibility and good bonding between layers of polymer films or fabrics. However, current polymer adhesives cannot withstand temperatures above 400 C. This innovation utilizes nanotechnology capabilities to address this need, leading to the development of high-temperature adhesives that exhibit high thermal conductivity in addition to increased thermal decomposition temperature. Enhanced thermal conductivity will help to dissipate heat quickly and effectively to avoid temperature rising to harmful levels. This, together with increased thermal decomposition temperature, will enable the adhesives to sustain transient high-temperature conditions.

Simple Electrolyzer Model Development for High-Temperature Electrolysis System Analysis Using Solid Oxide Electrolysis Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

JaeHwa Koh; DuckJoo Yoon; Chang H. Oh

2010-07-01

An electrolyzer model for the analysis of a hydrogen-production system using a solid oxide electrolysis cell (SOEC) has been developed, and the effects for principal parameters have been estimated by sensitivity studies based on the developed model. The main parameters considered are current density, area specific resistance, temperature, pressure, and molar fraction and flow rates in the inlet and outlet. Finally, a simple model for a high-temperature hydrogen-production system using the solid oxide electrolysis cell integrated with very high temperature reactors is estimated.

Method and composition for improving flux pinning and critical current in superconductors

DOEpatents

Morris, Donald E.

1995-01-01

Superconducting materials and methods of forming superconducting materials are disclosed. Highly oxidized superconductors are heated at a relatively high temperature so as to release oxygen, which migrates out of the material, and form a non-superconducting phase which does not diffuse out of grains of the material. The material is then reoxidized at a lower temperature, leaving the non-superconducting inclusions inside a superconducting phase. The non-superconducting inclusions act as pinning centers in the superconductor, increasing the critical current thereof.

Method and composition for improving flux pinning and critical current in superconductors

DOEpatents

Morris, D.E.

1995-07-04

Superconducting materials and methods of forming superconducting materials are disclosed. Highly oxidized superconductors are heated at a relatively high temperature so as to release oxygen, which migrates out of the material, and form a non-superconducting phase which does not diffuse out of grains of the material. The material is then reoxidized at a lower temperature, leaving the non-superconducting inclusions inside a superconducting phase. The non-superconducting inclusions act as pinning centers in the superconductor, increasing the critical current thereof. 14 figs.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN /GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

2005-10-01

Pt-gated AlGaN /GaN high electron mobility transistors can be used as room-temperature hydrogen gas sensors at hydrogen concentrations as low as 100ppm. A comparison of the changes in drain and gate current-voltage (I-V) characteristics with the introduction of 500ppm H2 into the measurement ambient shows that monitoring the change in drain-source current provides a wider gate voltage operation range for maximum detection sensitivity and higher total current change than measuring the change in gate current. However, over a narrow gate voltage range, the relative sensitivity of detection by monitoring the gate current changes is up to an order of magnitude larger than that of drain-source current changes. In both cases, the changes are fully reversible in <2-3min at 25°C upon removal of the hydrogen from the ambient.

Phosphor-Doped Thermal Barrier Coatings Deposited by Air Plasma Spray for In-Depth Temperature Sensing

PubMed Central

Peng, Di; Yang, Lixia; Cai, Tao; Liu, Yingzheng; Zhao, Xiaofeng; Yao, Zhiqi

2016-01-01

Yttria-stabilized zirconia (YSZ)-based thermal barrier coating (TBC) has been integrated with thermographic phosphors through air plasma spray (APS) for in-depth; non-contact temperature sensing. This coating consisted of a thin layer of Dy-doped YSZ (about 40 µm) on the bottom and a regular YSZ layer with a thickness up to 300 µm on top. A measurement system has been established; which included a portable; low-cost diode laser (405 nm); a photo-multiplier tube (PMT) and the related optics. Coating samples with different topcoat thickness were calibrated in a high-temperature furnace from room temperature to around 900 °C. The results convincingly showed that the current sensor and the measurement system was capable of in-depth temperature sensing over 800 °C with a YSZ top layer up to 300 µm. The topcoat thickness was found to have a strong effect on the luminescent signal level. Therefore; the measurement accuracy at high temperatures was reduced for samples with thick topcoats due to strong light attenuation. However; it seemed that the light transmissivity of YSZ topcoat increased with temperature; which would improve the sensor’s performance at high temperatures. The current sensor and the measurement technology have shown great potential in on-line monitoring of TBC interface temperature. PMID:27690037

Evaluation of High Temperature Knitted Spring Tubes for Structural Seal Applications

NASA Technical Reports Server (NTRS)

Taylor, Shawn C.; DeMange, Jeffrey J.; Dunlap, Patrick H., Jr.; Steinetz, Bruce M.

2004-01-01

Control surface seals are crucial to current and future space vehicles, as they are used to seal the gaps surrounding body flaps, elevons, and other actuated exterior surfaces. During reentry, leakage of high temperature gases through these gaps could damage underlying lower temperature structures such as rudder drive motors and mechanical actuators, resulting in impaired vehicle control. To be effective, control surface seals must shield lower temperature structures from heat transfer by maintaining sufficient resiliency to remain in contact with opposing sealing surfaces through multiple compression cycles. The current seal exhibits significant loss of resiliency after a few compression cycles at elevated temperatures (i.e., 1900 F) and therefore would be inadequate for advanced space vehicles. This seal utilizes a knitted Inconel X-750 spring tube as its primary resilient element. As part of a larger effort to enhance seal resiliency, researchers at the NASA Glenn Research Center performed high temperature compression testing (up to 2000 F) on candidate spring tube designs employing material substitutions and modified geometries. These tests demonstrated significant improvements in spring tube resiliency (5.5x better at 1750 F) through direct substitution of heat treated Rene 41 alloy in the baseline knit design. The impact of geometry modification was minor within the range of parameters tested, however trends did suggest that moderate resiliency improvements could be obtained by optimizing the current spring tube geometry.

A High-Sensitivity Flexible Eddy Current Array Sensor for Crack Monitoring of Welded Structures under Varying Environment.

PubMed

Chen, Tao; He, Yuting; Du, Jinqiang

2018-06-01

This paper develops a high-sensitivity flexible eddy current array (HS-FECA) sensor for crack monitoring of welded structures under varying environment. Firstly, effects of stress, temperature and crack on output signals of the traditional flexible eddy current array (FECA) sensor were investigated by experiments that show both stress and temperature have great influences on the crack monitoring performance of the sensor. A 3-D finite element model was established using Comsol AC/DC module to analyze the perturbation effects of crack on eddy currents and output signals of the sensor, which showed perturbation effect of cracks on eddy currents is reduced by the current loop when crack propagates. Then, the HS-FECA sensor was proposed to boost the sensitivity to cracks. Simulation results show that perturbation effect of cracks on eddy currents excited by the HS-FECA sensor gradually grows stronger when the crack propagates, resulting in much higher sensitivity to cracks. Experimental result further shows that the sensitivity of the new sensor is at least 19 times that of the original one. In addition, both stress and temperature variations have little effect on signals of the new sensor.

Research on resistance characteristics of YBCO tape under short-time DC large current impact

NASA Astrophysics Data System (ADS)

Zhang, Zhifeng; Yang, Jiabin; Qiu, Qingquan; Zhang, Guomin; Lin, Liangzhen

2017-06-01

Research of the resistance characteristics of YBCO tape under short-time DC large current impact is the foundation of the developing DC superconducting fault current limiter (SFCL) for voltage source converter-based high voltage direct current system (VSC-HVDC), which is one of the valid approaches to solve the problems of renewable energy integration. SFCL can limit DC short-circuit and enhance the interrupting capabilities of DC circuit breakers. In this paper, under short-time DC large current impacts, the resistance features of naked tape of YBCO tape are studied to find the resistance - temperature change rule and the maximum impact current. The influence of insulation for the resistance - temperature characteristics of YBCO tape is studied by comparison tests with naked tape and insulating tape in 77 K. The influence of operating temperature on the tape is also studied under subcooled liquid nitrogen condition. For the current impact security of YBCO tape, the critical current degradation and top temperature are analyzed and worked as judgment standards. The testing results is helpful for in developing SFCL in VSC-HVDC.

Electrical characterization of glass, teflon, and tantalum capacitors at high temperatures

NASA Technical Reports Server (NTRS)

Hammoud, A. N.; Baumann, E. D.; Myers, I. T.; Overton, E.

1991-01-01

Dielectric materials and electrical components and devices employed in radiation fields and the space environment are often exposed to elevated temperatures among other things. Therefore, these systems must withstand the high temperature exposure while still providing good electrical and other functional properties. Experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200 C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. The DC leakage current measurements were also performed in a temperature range from 20 to 200 C. The obtained results are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

Overview of NASA Studies on High-Temperature Ceramic Fibers

NASA Technical Reports Server (NTRS)

DiCarlo, James A.; Yun, Hee Mann

2001-01-01

NASA, DOD, and DOE are currently looking to the NASA UEET Program to develop ceramic matrix composites (CMC) for hot-section components in advanced power and propulsion systems - Success will depend strongly on developing ceramic fibers with a variety of key thermostructural properties, in particular, high as-produced tensile strength and retention of a large fraction of this strength for long times under the anticipated CMC service conditions. - Current UEET approach centers on selecting the optimum fiber type from commercially available fibers since the costs for development of advanced fibers are high and the markets for high-temperature CMC have yet to be established.

Speckle measurements of density and temperature profiles in a model gas circuit breaker

NASA Astrophysics Data System (ADS)

Stoller, P. C.; Panousis, E.; Carstensen, J.; Doiron, C. B.; Färber, R.

2015-01-01

Speckle imaging was used to measure the density and temperature distribution in the arc zone of a model high voltage circuit breaker during the high current phase and under conditions simulating those present during current-zero crossings (current-zero-like arc); the arc was stabilized by a transonic, axial flow of synthetic air. A single probe beam was used; thus, accurate reconstruction was only possible for axially symmetric gas flows and arc channels. The displacement of speckles with respect to a reference image was converted to a line-of-sight integrated deflection angle, which was in turn converted into an axially symmetric refractive index distribution using a multistep process that made use of the inverse Radon transform. The Gladstone-Dale relation, which gives the index of refraction as a function of density, was extended to high temperatures by taking into account dissociation and ionization processes. The temperature and density were determined uniquely by assuming that the pressure distribution in the case of cold gas flow (in the absence of an arc) is not modified significantly by the arc. The electric conductivity distribution was calculated from the temperature profile and compared to measurements of the arc voltage and to previous results published in the literature for similar experimental conditions.

Ethanol electrooxidation on a carbon-supported Pt catalyst at elevated temperature and pressure: A high-temperature/high-pressure DEMS study

NASA Astrophysics Data System (ADS)

Sun, S.; Halseid, M. Chojak; Heinen, M.; Jusys, Z.; Behm, R. J.

The electrooxidation of ethanol on a Pt/Vulcan catalyst was investigated in model studies by on-line differential electrochemical mass spectrometry (DEMS) over a wide range of reaction temperatures (23-100 °C). Potentiodynamic and potentiostatic measurements of the Faradaic current and the CO 2 formation rate, performed at 3 bar overpressure under well-defined transport and diffusion conditions reveal significant effects of temperature, potential and ethanol concentration on the total reaction activity and on the selectivity for the pathway toward complete oxidation to CO 2. The latter pathway increasingly prevails at higher temperature, lower concentration and lower potentials (∼90% current efficiency for CO 2 formation at 100 °C, 0.01 M, 0.48 V), while at higher ethanol concentrations (0.1 M), higher potentials or lower temperatures the current efficiency for CO 2 formation drops, reaching values of a few percent at room temperature. These trends result in a significantly higher apparent activation barrier for complete oxidation to CO 2 (68 ± 2 kJ mol -1 at 0.48 V, 0.1 M) compared to that of the overall ethanol oxidation reaction determined from the Faradaic current (42 ± 2 kJ mol -1 at 0.48 V, 0.1 M). The mechanistic implications of these results and the importance of relevant reaction and mass transport conditions in model studies for reaction predictions in fuel cell applications are discussed.

Competition between ionic adsorption and desorption on electrochemical double layer capacitor electrodes in acetonitrile solutions at different currents and temperatures

NASA Astrophysics Data System (ADS)

Park, Sieun; Kang, Seok-Won; Kim, Ketack

2017-12-01

The operation of electrochemical double layer capacitors at high currents and viscosities and at low temperatures is difficult. Under these conditions, ion transport is limited, and some of the electrode area is unavailable for adsorption, which results in a low capacitance. Increasing the temperature helps to increase the ionic movement, leading to enhanced adsorption and increased capacitance. In contrast, ion desorption (self-discharge) surpasses the capacitance improvement when ions gain a high amount of energy with increasing temperature. For example, temperatures as high as 70 °C cause a very high rate of ionic desorption in acetonitrile solutions in which the individual properties of the two electrolytes-tetraethylammonium tetrafluoroborate (TEA BF4) and ethylmethylimidazolium tetrafluoroborate (EMI BF4)-are not distinguishable. The capacitance improvement and self-discharge are balanced, resulting in a capacitance peak at mid-range temperatures, i.e., 35-45 °C, in the more viscous electrolyte, i.e., TEA BF4. The less viscous electrolyte, i.e., EMI BF4 has a wider capacitance peak from 25 to 45 °C and higher capacitance than that of TEA BF4. Because the maximum power is obtained in the mid-temperature range (35-45 °C), it is necessary to control the viscosity and temperature to obtain the maximum power in a given device.

Characteristics of III-V Semiconductor Devices at High Temperature

NASA Technical Reports Server (NTRS)

Simons, Rainee N.; Young, Paul G.; Taub, Susan R.; Alterovitz, Samuel A.

1994-01-01

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

High Accuracy Temperature Measurements Using RTDs with Current Loop Conditioning

NASA Technical Reports Server (NTRS)

Hill, Gerald M.

1997-01-01

To measure temperatures with a greater degree of accuracy than is possible with thermocouples, RTDs (Resistive Temperature Detectors) are typically used. Calibration standards use specialized high precision RTD probes with accuracies approaching 0.001 F. These are extremely delicate devices, and far too costly to be used in test facility instrumentation. Less costly sensors which are designed for aeronautical wind tunnel testing are available and can be readily adapted to probes, rakes, and test rigs. With proper signal conditioning of the sensor, temperature accuracies of 0.1 F is obtainable. For reasons that will be explored in this paper, the Anderson current loop is the preferred method used for signal conditioning. This scheme has been used in NASA Lewis Research Center's 9 x 15 Low Speed Wind Tunnel, and is detailed.

Cross Linked Metal Particles for Low Noise Bolometer Materials

DTIC Science & Technology

2016-12-12

Our results indicate that the CLMPs can simultaneously have a high temperature coefficient of resistivity and a low noise, and therefore have a...indicate that the CLMPs can simultaneously have a high temperature co- efficient of resistivity and a low noise, and therefore have a great potential...current as a function of the inverse of applied bias for CLMP films at different temperatures. It is seen that the I-V curves are highly nonlinear as 7 0

The 1992 NASA Langley Measurement Technology Conference: Measurement Technology for Aerospace Applications in High-Temperature Environments

NASA Technical Reports Server (NTRS)

Singh, Jag J. (Editor); Antcliff, Richard R. (Editor)

1992-01-01

An intensive 2-day conference to discuss the current status of measurement technology in the areas of temperature/heat flux, stress/strain, pressure, and flowfield diagnostics for high temperature aerospace applications was held at Langley Research Center, Hampton, Virginia, on April 22 and 23, 1993. Complete texts of the papers presented at the Conference are included in these proceedings.

Quantitative Investigation of Room-Temperature Breakdown Effects in Pixelated TlBr Detectors

NASA Astrophysics Data System (ADS)

Koehler, Will; He, Zhong; Thrall, Crystal; O'Neal, Sean; Kim, Hadong; Cirignano, Leonard; Shah, Kanai

2014-10-01

Due to favorable material properties such as high atomic number (Tl: 81, Br: 35), high density ( 7.56 g/cm3), and a wide band gap (2.68 eV), thallium-bromide (TlBr) is currently under investigation for use as an alternative room-temperature semiconductor gamma-ray spectrometer. TlBr detectors can achieve less than 1% FWHM energy resolution at 662 keV, but these results are limited to stable operation at - 20°C. After days to months of room-temperature operation, ionic conduction causes these devices to fail. This work correlates the varying leakage current with alpha-particle and gamma-ray spectroscopic performances at various operating temperatures. Depth-dependent photopeak centroids exhibit time-dependent transient behavior, which indicates trapping sites form near the anode surface during room-temperature operation. After refabrication, similar performance and functionality of failed detectors returned.

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Preparation of Platinum (Pt) Counter Electrode Coated by Electrochemical Technique at High Temperature for Dye-sensitized Solar Cell (DSSC) Application

NASA Astrophysics Data System (ADS)

Ponken, Tanachai; Tagsin, Kamonlapron; Suwannakhun, Chuleerat; Luecha, Jakkrit; Choawunklang, Wijit

2017-09-01

Pt counter electrode was coated by electrochemical method. Electrolyte solution was synthesized by platinum (IV) choloride (PtCl4) powder dissolved in hydrochloric acid solution. Pt films were deposited on the FTO substrate. Deposition time of 10, 30 and 60 minutes, the coating current of 5, 10, 15 and 20 mA and electrolyte solution temperatures for Pt layer synthesis of 25, 30 and 40°C were varied. Surface morphology and optical properties was analyzed by digital microscopic and UV-vis spectrophotometer. Pt films exhibit uniform surface area highly for all the conditions of coating current in the deposition time of 30 and 40 minutes at 40°C. Transmittance values of Pt films deposited on FTO substrate has approximately of 5 to 50 % show that occur high reflection corresponding to dye molecule absorption increases. DSSC device was fabricated from the TiO2 standard and immersed in dye N719 for 24 hours. Efficiency was measured by solar simulator. Efficiency value obtains as high as 5.91 % for the coating current, deposition time and solution temperature of 15 mA, 30 minutes and 40°C. Summary, influence of temperature effects efficiency increasing. Pt counter electrode can be prepared easily and the suitable usefully for DSSC.

Development of an ultra-high temperature infrared scene projector at Santa Barbara Infrared Inc.

NASA Astrophysics Data System (ADS)

Franks, Greg; Laveigne, Joe; Danielson, Tom; McHugh, Steve; Lannon, John; Goodwin, Scott

2015-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to develop correspondingly larger-format infrared emitter arrays to support the testing needs of systems incorporating these detectors. As with most integrated circuits, fabrication yields for the read-in integrated circuit (RIIC) that drives the emitter pixel array are expected to drop dramatically with increasing size, making monolithic RIICs larger than the current 1024x1024 format impractical and unaffordable. Additionally, many scene projector users require much higher simulated temperatures than current technology can generate to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024x1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During an earlier phase of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1000K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. Also in development under the same UHT program is a 'scalable' RIIC that will be used to drive the high temperature pixels. This RIIC will utilize through-silicon vias (TSVs) and quilt packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the inherent yield limitations of very-large-scale integrated circuits. Current status of the RIIC development effort will also be presented.

HEATING MECHANISMS IN THE LOW SOLAR ATMOSPHERE THROUGH MAGNETIC RECONNECTION IN CURRENT SHEETS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ni, Lei; Lin, Jun; Roussev, Ilia I.

2016-12-01

We simulate several magnetic reconnection processes in the low solar chromosphere/photosphere; the radiation cooling, heat conduction and ambipolar diffusion are all included. Our numerical results indicate that both the high temperature (≳8 × 10{sup 4} K) and low temperature (∼10{sup 4} K) magnetic reconnection events can happen in the low solar atmosphere (100–600 km above the solar surface). The plasma β controlled by plasma density and magnetic fields is one important factor to decide how much the plasma can be heated up. The low temperature event is formed in a high β magnetic reconnection process, Joule heating is the mainmore » mechanism to heat plasma and the maximum temperature increase is only several thousand Kelvin. The high temperature explosions can be generated in a low β magnetic reconnection process, slow and fast-mode shocks attached at the edges of the well developed plasmoids are the main physical mechanisms to heat the plasma from several thousand Kelvin to over 8 × 10{sup 4} K. Gravity in the low chromosphere can strongly hinder the plasmoid instability and the formation of slow-mode shocks in a vertical current sheet. Only small secondary islands are formed; these islands, however, are not as well developed as those in the horizontal current sheets. This work can be applied to understand the heating mechanism in the low solar atmosphere and could possibly be extended to explain the formation of common low temperature Ellerman bombs (∼10{sup 4} K) and the high temperature Interface Region Imaging Spectrograph (IRIS) bombs (≳8 × 10{sup 4}) in the future.« less

Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

NASA Astrophysics Data System (ADS)

He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

2017-02-01

The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

Integrated modeling of plasma ramp-up in DIII-D ITER-like and high bootstrap current scenario discharges

NASA Astrophysics Data System (ADS)

Wu, M. Q.; Pan, C. K.; Chan, V. S.; Li, G. Q.; Garofalo, A. M.; Jian, X.; Liu, L.; Ren, Q. L.; Chen, J. L.; Gao, X.; Gong, X. Z.; Ding, S. Y.; Qian, J. P.; Cfetr Physics Team

2018-04-01

Time-dependent integrated modeling of DIII-D ITER-like and high bootstrap current plasma ramp-up discharges has been performed with the equilibrium code EFIT, and the transport codes TGYRO and ONETWO. Electron and ion temperature profiles are simulated by TGYRO with the TGLF (SAT0 or VX model) turbulent and NEO neoclassical transport models. The VX model is a new empirical extension of the TGLF turbulent model [Jian et al., Nucl. Fusion 58, 016011 (2018)], which captures the physics of multi-scale interaction between low-k and high-k turbulence from nonlinear gyro-kinetic simulation. This model is demonstrated to accurately model low Ip discharges from the EAST tokamak. Time evolution of the plasma current density profile is simulated by ONETWO with the experimental current ramp-up rate. The general trend of the predicted evolution of the current density profile is consistent with that obtained from the equilibrium reconstruction with Motional Stark effect constraints. The predicted evolution of βN , li , and βP also agrees well with the experiments. For the ITER-like cases, the predicted electron and ion temperature profiles using TGLF_Sat0 agree closely with the experimental measured profiles, and are demonstrably better than other proposed transport models. For the high bootstrap current case, the predicted electron and ion temperature profiles perform better in the VX model. It is found that the SAT0 model works well at high IP (>0.76 MA) while the VX model covers a wider range of plasma current ( IP > 0.6 MA). The results reported in this paper suggest that the developed integrated modeling could be a candidate for ITER and CFETR ramp-up engineering design modeling.

Impurities, temperature, and density in a miniature electrostatic plasma and current source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Den Hartog, D.J.; Craig, D.J.; Fiksel, G.

1996-10-01

We have spectroscopically investigated the Sterling Scientific miniature electrostatic plasma source-a plasma gun. This gun is a clean source of high density (10{sup 19} - 10{sup 20} m{sup -3}), low temperature (5 - 15 eV) plasma. A key result of our investigation is that molybdenum from the gun electrodes is largely trapped in the internal gun discharge; only a small amount escapes in the plasma flowing out of the gun. In addition, the gun plasma parameters actually improve (even lower impurity contamination and higher ion temperature) when up to 1 kA of electron current is extracted from the gun viamore » the application of an external bias. This improvement occurs because the internal gun anode no longer acts as the current return for the internal gun discharge. The gun plasma is a virtual plasma electrode capable of sourcing an electron emission current density of 1 kA/cm{sup 2}. The high emission current, small size (3 - 4 cm diameter), and low impurity generation make this gun attractive for a variety of fusion and plasma technology applications.« less

Complex performance during exposure to high temperatures.

DOT National Transportation Integrated Search

1969-06-01

The effects of high temperature on psychomotor performance and physiological function were studied on male pilots (age 30-51) holding a current medical certificate. A total of 41 runs were made at neutral (23.8C (75F), or hot (60.0C (140F), 71.1C (16...

Post-deposition-annealing effect on current conduction in Al2O3 films formed by atomic layer deposition with H2O oxidant

NASA Astrophysics Data System (ADS)

Hiraiwa, Atsushi; Matsumura, Daisuke; Okubo, Satoshi; Kawarada, Hiroshi

2017-02-01

Atomic-layer-deposition (ALD) Al2O3 films are promising as gate insulators of non-Si semiconductor devices. Although they allow relatively small leakage currents just after deposition, ALD Al2O3 films formed at low temperatures are subject to high temperature during fabrication or operation of devices. Therefore, the effect of post-deposition annealing (PDA) on the properties of Al2O3 films is investigated in this study. ALD Al2O3 films formed using H2O oxidant at low temperatures are compacted by PDA, but their mass density and dielectric constant remain approximately unchanged or slightly decrease owing to the desorption of methyl groups contained in the films as impurities. In accordance with these results, the wet etching rate of Al2O3 films is not much reduced by PDA. The conduction current in ALD Al2O3 films formed on Si is reduced by PDA and becomes smaller than that in films formed at the same ALD temperatures as those of PDA. The conduction current for PDA temperatures above 250 °C, however, increases and, accordingly, spoils the merit of low-temperature ALD. Therefore, given that the dielectric constant of annealed films remains low, high-temperature ALD is practically more significant than applying PDA to low-temperature ALD Al2O3 films from the viewpoint of leakage current under the same thermal budget. Space-charge-controlled field emission analysis revealed that, at the aforementioned threshold temperature, PDA abruptly increases the Al2O3/SiO2 interfacial dipoles and simultaneously reduces the amount of the positive charge near the interface. The so-called negative-charge buildup by PDA might be caused by this decrease in the positive charge.

Environmental Barrier Coatings (EBC) for Ceramic Matrix Composite (CMC) Materials

NASA Technical Reports Server (NTRS)

Lee,Kang

2001-01-01

The upper use temperature of current Environmental Barrier Coatings (EBC's) based on mullite and BSAS (EPM EBC's) is limited to -255 F due to silica volatility, chemical reactions, and high thermal conductivity. Therefore, new EBC s having low CTE, good chemical compatibility, and high melting point (greater than 2700 F ) are being investigated. Sinter-resistant, low thermal conductivity EBC s are strongly desired to achieve the UEET EBC goal of 270 F EBC surface temperature and 30 F AT over long exposures (greater than 1000 hr). Key areas affecting the upper temperature limit of current EBC s as well as the ongoing efforts to develop next generation EBC s in the UEET Program will be discussed.

Earth Observing-1 Advanced Land Imager: Dark Current and Noise Characterization and Anomalous Detectors

NASA Technical Reports Server (NTRS)

Mendenhall, J. A.

2001-01-01

The dark current and noise characteristics of the Earth Observing-1 Advanced Land Imager measured during ground calibration at MIT Lincoln Laboratory are presented. Data were collected for the nominal focal plane operating temperature of 220 K as well as supplemental operating temperatures (215 and 225 K). Dark current baseline values are provided, and noise characterization includes the evaluation of white, coherent, low frequency, and high frequency components. Finally, anomalous detectors, characterized by unusual dark current, noise, gain, or cross-talk properties are investigated.

Ultra-Low Heat-Leak, High-Temperature Superconducting Current Leads for Space Applications

NASA Technical Reports Server (NTRS)

Rey, Christopher M.

2013-01-01

NASA Goddard Space Flight Center has a need for current leads used in an adiabatic demagnetization refrigerator (ADR) for space applications. These leads must comply with stringent requirements such as a heat leak of approximately 100 W or less while conducting up to 10 A of electric current, from more than 90 K down to 10 K. Additionally, a length constraint of < 300 mm length and < 50 mm diameter is to be maintained. The need for these current leads was addressed by developing a superconducting hybrid lead. This hybrid lead comprises two different high-temperature superconducting (HTS) conductors bonded together at a thermally and electrically determined optimum point along the length of the current lead. By taking advantage of material properties of each conductor type, employing advanced fabrication techniques, and taking advantage of novel insulation materials, the company was able to develop and fabricate the lightweight, low heat-leak leads currently to NASA's specs.

High-temperature creep properties and life predictions for T91 and T92 steels

NASA Astrophysics Data System (ADS)

Pan, J. P.; Tu, S. H.; Sun, G. L.; Zhu, X. W.; Tan, L. J.; Hu, B.

2018-01-01

9-11%Cr heat-resistant steels are widely used in high-temperature and high-pressure boilers of advanced power plants. In the current paper, high-temperature creep behaviors of T91 and T92 steels have been investigated. Creep tests were performed for both steels at varied temperatures. The creep mechanisms of T91 and T92 steels were elucidated by analyzing the creep rupture data of the two steels. In addition, Manson-Haferd model was employed to predict the creep life of T91 and T92 steels, the results of which indicate that the Manson-Haferd model works well for the two steels.

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

DOE PAGES

Wang, Zhiqiang; Shi, Xiaojie; Tolbert, Leon M.; ...

2014-04-30

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate drivermore » and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.« less

On-site chemical pre-lithiation of S cathode at room temperature on a 3D nano-structured current collector

NASA Astrophysics Data System (ADS)

Wu, Yunwen; Momma, Toshiyuki; Ahn, Seongki; Yokoshima, Tokihiko; Nara, Hiroki; Osaka, Tetsuya

2017-10-01

This work reports a new chemical pre-lithiation method to fabricate lithium sulfide (Li2S) cathode. This pre-lithiation process is taken place simply by dropping the organolithium reagent lithium naphthalenide (Li+Naph-) on the prepared sulfur cathode. It is the first time realizing the room temperature chemical pre-lithaition reaction attributed by the 3D nanostructured carbon nanotube (CNT) current collector. It is confirmed that the Li2S cathode fabricated at room temperature showing higher capacity and lower hysteresis than the Li2S cathode fabricated at high temperature pre-lithiation. The pre-lithiated Li2S cathode at room temperature shows stable cycling performance with a 600 mAh g-1 capacity after 100 cycles at 0.1 C-rate and high capacity of 500 mAh g-1 at 2 C-rate. This simple on-site pre-lithiation method at room temperature is demonstrated to be applicable for the in-situ pre-lithiation in a Li metal free battery.

The Joule heating problem in silver nanowire transparent electrodes

NASA Astrophysics Data System (ADS)

Khaligh, H. H.; Xu, L.; Khosropour, A.; Madeira, A.; Romano, M.; Pradére, C.; Tréguer-Delapierre, M.; Servant, L.; Pope, M. A.; Goldthorpe, I. A.

2017-10-01

Silver nanowire transparent electrodes have shown considerable potential to replace conventional transparent conductive materials. However, in this report we show that Joule heating is a unique and serious problem with these electrodes. When conducting current densities encountered in organic solar cells, the average surface temperature of indium tin oxide (ITO) and silver nanowire electrodes, both with sheet resistances of 60 ohms/square, remains below 35 °C. However, in contrast to ITO, the temperature in the nanowire electrode is very non-uniform, with some localized points reaching temperatures above 250 °C. These hotspots accelerate nanowire degradation, leading to electrode failure after 5 days of continuous current flow. We show that graphene, a commonly used passivation layer for these electrodes, slows nanowire degradation and creates a more uniform surface temperature under current flow. However, the graphene does not prevent Joule heating in the nanowires and local points of high temperature ultimately shift the failure mechanism from nanowire degradation to melting of the underlying plastic substrate. In this paper, surface temperature mapping, lifetime testing under current flow, post-mortem analysis, and modelling illuminate the behaviour and failure mechanisms of nanowires under extended current flow and provide guidelines for managing Joule heating.

Current sensor

DOEpatents

Yakymyshyn, Christopher Paul; Brubaker, Michael Allen; Yakymyshyn, Pamela Jane

2007-01-16

A current sensor is described that uses a plurality of magnetic field sensors positioned around a current carrying conductor. The sensor can be hinged to allow clamping to a conductor. The current sensor provides high measurement accuracy for both DC and AC currents, and is substantially immune to the effects of temperature, conductor position, nearby current carrying conductors and aging.

Performance Testing of a High Temperature Linear Alternator for Stirling Convertors

NASA Technical Reports Server (NTRS)

Metscher, Jonathan; Geng, Steven

2016-01-01

The NASA Glenn Research Center has conducted performance testing of a high temperature linear alternator (HTLA) in support of Stirling power convertor development for potential future Radioisotope Power Systems (RPS). The high temperature linear alternator is a modified version of that used in Sunpowers Advanced Stirling Convertor (ASC), and is capable of operation at temperatures up to 200 C. Increasing the temperature capability of the linear alternator could expand the mission space of future Stirling RPS designs. High temperature Neodymium-Iron-Boron (Nd-Fe-B) magnets were selected for the HTLA application, and were fully characterized and tested prior to uses. Higher temperature epoxy for alternator assembly was also selected and tested for thermal stability and strength. A characterization test was performed on the HTLA to measure its performance at various amplitudes, loads, and temperatures. HTLA endurance testing at 200 C is currently underway.

Performance Testing of a High Temperature Linear Alternator for Stirling Convertors

NASA Technical Reports Server (NTRS)

Metscher, Jonathan F.; Geng, Steven M.

2016-01-01

The NASA Glenn Research Center has conducted performance testing of a high temperature linear alternator (HTLA) in support of Stirling power convertor development for potential future Radioisotope Power Systems (RPS). The high temperature linear alternator is a modified version of that used in Sunpower's Advanced Stirling Convertor (ASC), and is capable of operation at temperatures up to 200 deg. Increasing the temperature capability of the linear alternator could expand the mission set of future Stirling RPS designs. High temperature Neodymium-Iron-Boron (Nd-Fe-B) magnets were selected for the HTLA application, and were fully characterized and tested prior to use. Higher temperature epoxy for alternator assembly was also selected and tested for thermal stability and strength. A characterization test was performed on the HTLA to measure its performance at various amplitudes, loads, and temperatures. HTLA endurance testing at 200 deg is currently underway.

On the origin of the low-temperature band in depolarization current spectra of poled multicomponent silicate glasses

NASA Astrophysics Data System (ADS)

Brunkov, P. N.; Kaasik, V. P.; Lipovskii, A. A.; Tagantsev, D. K.

2018-04-01

Thermally stimulated depolarization current spectra of poled silicate multicomponent glasses in the vicinity of room temperature (220-320 K) have been recorded and two bands, typical for such glasses, have been observed. It was shown that the high-temperature band (at about 290 K) is related to the relaxation of poled glass structure in the bulk, while the low-temperature band (at about 230-270 K) should be attributed to the surface phenomenon—absorption/desorption of positive species of ambient atmosphere, supposedly, water cluster ions H+(H2O)n.

High-performance superconductors for Fusion Nuclear Science Facility

DOE PAGES

Zhai, Yuhu; Kessel, Chuck; Barth, Christian; ...

2016-11-09

High-performance superconducting magnets play an important role in the design of the next step large-scale, high-field fusion reactors such as the fusion nuclear science facility (FNSF) and the spherical tokamak (ST) pilot plant beyond ITER. Here, Princeton Plasma Physics Laboratory is currently leading the design studies of the FNSF and the ST pilot plant study. ITER, which is under construction in the south of France, utilizes the state-of-the-art low temperature superconducting magnet technology based on the cable-in-conduit conductor design, where over a thousand multifilament Nb 3Sn superconducting strands are twisted together to form a high-current-carrying cable inserted into a steelmore » jacket for coil windings. We present design options of the high-performance superconductors in the winding pack for the FNSF toroidal field magnet system based on the toroidal field radial build from the system code. For the low temperature superconductor options, the advanced J cNb 3Sn RRP strands (J c > 1000 A/mm 2 at 16 T, 4 K) from Oxford Superconducting Technology are under consideration. For the high-temperature superconductor options, the rectangular-shaped high-current HTS cable made of stacked YBCO tapes will be considered to validate feasibility of TF coil winding pack design for the ST-FNSF magnets.« less

High-performance superconductors for Fusion Nuclear Science Facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhai, Yuhu; Kessel, Chuck; Barth, Christian

High-performance superconducting magnets play an important role in the design of the next step large-scale, high-field fusion reactors such as the fusion nuclear science facility (FNSF) and the spherical tokamak (ST) pilot plant beyond ITER. Here, Princeton Plasma Physics Laboratory is currently leading the design studies of the FNSF and the ST pilot plant study. ITER, which is under construction in the south of France, utilizes the state-of-the-art low temperature superconducting magnet technology based on the cable-in-conduit conductor design, where over a thousand multifilament Nb 3Sn superconducting strands are twisted together to form a high-current-carrying cable inserted into a steelmore » jacket for coil windings. We present design options of the high-performance superconductors in the winding pack for the FNSF toroidal field magnet system based on the toroidal field radial build from the system code. For the low temperature superconductor options, the advanced J cNb 3Sn RRP strands (J c > 1000 A/mm 2 at 16 T, 4 K) from Oxford Superconducting Technology are under consideration. For the high-temperature superconductor options, the rectangular-shaped high-current HTS cable made of stacked YBCO tapes will be considered to validate feasibility of TF coil winding pack design for the ST-FNSF magnets.« less

High-temperature superconducting current leads

NASA Astrophysics Data System (ADS)

Hull, J. R.

1992-07-01

The use of high-temperature superconductors (HTSs) for current leads to deliver power to devices at liquid helium temperature is near commercial realization. The use of HTSs in this application has the potential to reduce refrigeration requirements and helium boiloff to values significantly lower than the theoretical best achievable with conventional leads. Considerable advantage is achieved by operating these leads with an intermediate temperature heat sink. The HTS part of the lead can be made from pressed and sintered powder. Powder-in-tube fabrication is also possible, however, the normal metal part of the lead acts as a thermal short and cannot provide much stabilization without increasing the refrigeration required. Lead stability favors designs with low current density. Such leads can be manufactured with today's technology, and lower refrigeration results from the same allowable burnout time. Higher current densities result in lower boiloff for the same lead length, but bumout times can be very short. In comparing experiment to theory, the density of helium vapor needs to be accounted for in calculating the expected boiloff. For very low-loss leads, two-dimensional heat transfer and the state of the dewar near the leads may play a dominant role in lead performance.

Analysis of the internal temperature of the cells in a battery pack during SOC balancing

NASA Astrophysics Data System (ADS)

Mizanur, R.; Rashid, M. M.; Rahman, A.; Zahirul Alam, A. H. M.; Ihsan, S.; Mollik, M. S.

2017-03-01

Lithium-ion batteries are more suitable for the application of electric vehicle due to high energy and power density compared to other rechargeable batteries. However, the battery pack temperature has a great impact on the overall performance, cycle life, normal charging-discharging behaviour and even safety. During rapid charge transferring process, the internal temperature may exceed its allowable limit (460C). In this paper, an analysis of internal temperature during charge balancing and discharging conditions is presented. Specific interest is paid to the effects of temperature on the different rate of ambient temperature and discharging current. Matlab/Simulink Li-ion battery model and quasi-resonant converter base balancing system are used to study the temperature effect. Rising internal temperature depends on the rate of balancing current and ambient temperature found in the simulation results.

Development of a 10 m quasi-isotropic strand assembled from 2G wires

NASA Astrophysics Data System (ADS)

Kan, Changtao; Wang, Yinshun; Hou, Yanbing; Li, Yan; Zhang, Han; Fu, Yu; Jiang, Zhe

2018-03-01

Quasi-isotropic strands made of second generation (2G) high temperature superconducting (HTS) wires are attractive to applications of high-field magnets at low temperatures and power transmission cables at liquid nitrogen temperature in virtue of their high current carrying capability and well mechanical property. In this contribution, a 10 m length quasi-isotropic strand is manufactured and successfully tested in liquid nitrogen to verify the feasibility of an industrial scale production of the strand by the existing cabling technologies. The strand with copper sheath consists of 72 symmetrically assembled 2G wires. The uniformity of critical properties of long quasi-isotropic strands, including critical current and n-value, is very important for their using. Critical currents as well as n-values of the strand are measured every 1 m respectively and compared with the simulation results. Critical current and n-value of the strand are calculated basing on the self-consistent model solved by the finite element method (FEM). Effects of self-field on the critical current and n-value distributions in wires of the strand are analyzed in detail. The simulation results show good agreement with the experimental data and the 10 m quasi-isotropic strand has good critical properties uniformity.

Digital control of diode laser for atmospheric spectroscopy

NASA Technical Reports Server (NTRS)

Menzies, R. T.; Rutledge, C. W. (Inventor)

1985-01-01

A system is described for remote absorption spectroscopy of trace species using a diode laser tunable over a useful spectral region of 50 to 200 cm(-1) by control of diode laser temperature over range from 15 K to 100 K, and tunable over a smaller region of typically 0.1 to 10 cm(-1) by control of the diode laser current over a range from 0 to 2 amps. Diode laser temperature and current set points are transmitted to the instrument in digital form and stored in memory for retrieval under control of a microprocessor during measurements. The laser diode current is determined by a digital to analog converter through a field effect transistor for a high degree of ambient temperature stability, while the laser diode temperature is determined by set points entered into a digital to analog converter under control of the microprocessor. Temperature of the laser diode is sensed by a sensor diode to provide negative feedback to the temperature control circuit that responds to the temperature control digital to analog converter.

Analysis on temperature dependent current mechanism of tunnel field-effect transistors

NASA Astrophysics Data System (ADS)

Lee, Junil; Kwon, Dae Woong; Kim, Hyun Woo; Kim, Jang Hyun; Park, Euyhwan; Park, Taehyung; Kim, Sihyun; Lee, Ryoongbin; Lee, Jong-Ho; Park, Byung-Gook

2016-06-01

In this paper, the total drain current (I D) of a tunnel FET (TFET) is decomposed into each current component with different origins to analyze the I D formation mechanisms of the TFET as a function of gate voltage (V GS). Transfer characteristics are firstly extracted with fabricated Silicon channel TFETs (Si TFETs) and silicon germanium channel TFETs (SiGe TFETs) at various temperatures. The subthreshold swings (SS) of both Si TFETs and SiGe TFETs get degraded and the SSs of SiGe TFETs get degraded more as temperature becomes higher. Then, all the I Ds measured at various temperatures are decomposed into each current component through technology computer aided design (TCAD) simulations with a good agreement with experimental data. As a result, it is revealed that Shockley-Read-Hall (SRH) recombination mainly contribute to the I D of a TFET before band to band tunneling (BTBT) occurs. Furthermore, the SS degradation by high temperature is explained successfully by the SRH recombination with electric field dependence.

Theoretical study of the effect of ionospheric return currents on the electron temperature

NASA Technical Reports Server (NTRS)

Schunk, R. W.; Sojka, J. J.; Bowline, M. D.

1987-01-01

A time-dependent, three-dimensional model of the high-altitude ionosphere is presently used to study the effects of field-aligned ionospheric return currents on auroral electron temperatures for different seasonal and solar cycle conditions, as well as for different upper boundary heat fluxes. The average, large scale, return current densities, which are a few microamps/sq m, are too small to affect auroral electron temperatures. The thermoelectric effect exhibits a pronounced solar cycle and seasonal dependence, and its heat transport corresponds to an upward flow of electron energy which can be either a source or sink of electron energy depending on altitude and geophysical conditions.

Experimental Analysis of Critical Current and Alternating Current Losses of High-Temperature Superconductor Tape with Resin and Gallium-Indium-Tin

PubMed Central

Sun, Yajie; Zhang, Huiming; Meng, Yuanzhu

2018-01-01

This paper experimentally analyzes the critical current degradation and AC (alternating current) losses of second-generation (2G) high-temperature superconductor (HTS) tape during the impregnation process. Two impregnation materials were utilized: Gallium-Indium-Tin (GaInSn), and an epoxy resin, Araldite. The critical current of the impregnation materials was measured after different thermal cycles and compared with the tape with no impregnation process. The experimental results show that the critical current of Yttrium Barium Copper Oxide (YBCO) short samples varies between differently impregnated materials. The resin, Araldite, degraded the critical current; however, the GaInSn showed no degradation. Two degradation patterns with Araldite were identified due to the impregnation process, and the corresponding causes were analyzed. We further measured the AC losses of tapes impregnated with liquid metal at different frequencies, up to 600 Hz. Based on the experimental results, GaInSn liquid metal should be the most suitable impregnation material in terms of critical current degradation. PMID:29642490

Experimental Analysis of Critical Current and Alternating Current Losses of High-Temperature Superconductor Tape with Resin and Gallium-Indium-Tin.

PubMed

Yu, Dongmin; Sun, Yajie; Zhang, Huiming; Meng, Yuanzhu; Liu, Huanan

2018-04-08

This paper experimentally analyzes the critical current degradation and AC (alternating current) losses of second-generation (2G) high-temperature superconductor (HTS) tape during the impregnation process. Two impregnation materials were utilized: Gallium-Indium-Tin (GaInSn), and an epoxy resin, Araldite. The critical current of the impregnation materials was measured after different thermal cycles and compared with the tape with no impregnation process. The experimental results show that the critical current of Yttrium Barium Copper Oxide (YBCO) short samples varies between differently impregnated materials. The resin, Araldite, degraded the critical current; however, the GaInSn showed no degradation. Two degradation patterns with Araldite were identified due to the impregnation process, and the corresponding causes were analyzed. We further measured the AC losses of tapes impregnated with liquid metal at different frequencies, up to 600 Hz. Based on the experimental results, GaInSn liquid metal should be the most suitable impregnation material in terms of critical current degradation.

A superconducting direct-current limiter with a power of up to 8 MVA

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fisher, L. M.; Alferov, D. F., E-mail: DFAlferov@niitfa.ru; Akhmetgareev, M. R.

2016-12-15

A resistive switching superconducting fault current limiter (SFCL) for DC networks with a nominal voltage of 3.5 kV and a nominal current of 2 kA was developed, produced, and tested. The SFCL has two main units—an assembly of superconducting modules and a high-speed vacuum circuit breaker. The assembly of superconducting modules consists of nine (3 × 3) parallel–series connected modules. Each module contains four parallel-connected 2G high-temperature superconducting (HTS) tapes. The results of SFCL tests in the short-circuit emulation mode with a maximum current rise rate of 1300 A/ms are presented. The SFCL is capable of limiting the current atmore » a level of 7 kA and break it 8 ms after the current-limiting mode begins. The average temperature of HTS tapes during the current-limiting mode increases to 210 K. After the current is interrupted, the superconductivity recovery time does not exceed 1 s.« less

A superconducting direct-current limiter with a power of up to 8 MVA

NASA Astrophysics Data System (ADS)

Fisher, L. M.; Alferov, D. F.; Akhmetgareev, M. R.; Budovskii, A. I.; Evsin, D. V.; Voloshin, I. F.; Kalinov, A. V.

2016-12-01

A resistive switching superconducting fault current limiter (SFCL) for DC networks with a nominal voltage of 3.5 kV and a nominal current of 2 kA was developed, produced, and tested. The SFCL has two main units—an assembly of superconducting modules and a high-speed vacuum circuit breaker. The assembly of superconducting modules consists of nine (3 × 3) parallel-series connected modules. Each module contains four parallel-connected 2G high-temperature superconducting (HTS) tapes. The results of SFCL tests in the short-circuit emulation mode with a maximum current rise rate of 1300 A/ms are presented. The SFCL is capable of limiting the current at a level of 7 kA and break it 8 ms after the current-limiting mode begins. The average temperature of HTS tapes during the current-limiting mode increases to 210 K. After the current is interrupted, the superconductivity recovery time does not exceed 1 s.

Investigation of significantly high barrier height in Cu/GaN Schottky diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garg, Manjari, E-mail: meghagarg142@gmail.com; Kumar, Ashutosh; Singh, R.

2016-01-15

Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicated deviation from thermionic emission (TE) mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE) mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS) was used to investigate the plausible reason for observing Schottky barrier height (SBH) that is significantlymore » higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu{sub 2}O) layer at the interface between Cu and GaN. With Cu{sub 2}O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu{sub 2}O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.« less

Room-temperature magnetoelectric multiferroic thin films and applications thereof

DOEpatents

Katiyar, Ram S; Kuman, Ashok; Scott, James F.

2014-08-12

The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.

Containerless high temperature property measurements by atomic fluorescence

NASA Technical Reports Server (NTRS)

1983-01-01

The use of laser induced fluorescence (LIF) techniques for containerless study of high temperature processes and material properties is studied. Gas jet and electromagnetic levitation and electromagnetic and laser heating techniques are used with LIF in Earth-based containerless high temperature experiments. The work to date includes development of an apparatus and its use in studies of chemical reactions on Al2O3, molybdenum, and tungsten specimens, novel methods for noncontact specimen temperature measurement, and levitation jet properties. Brief summaries of these studies are given. The apparatus is described and detailed results for the current reporting period are presented.

Leakage current phenomena in Mn-doped Bi(Na,K)TiO{sub 3}-based ferroelectric thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walenza-Slabe, J.; Gibbons, B. J., E-mail: brady.gibbons@oregonstate.edu

2016-08-28

Mn-doped 80(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-20(Bi{sub 0.5}K{sub 0.5})TiO{sub 3} thin films were fabricated by chemical solution deposition on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. Steady state and time-dependent leakage current were investigated from room temperature to 180 °C. Undoped and low-doped films showed space-charge-limited current (SCLC) at high temperatures. The electric field marking the transition from Ohmic to trap-filling-limited current increased monotonically with Mn-doping. With 2 mol. % Mn, the current was Ohmic up to 430 kV/cm, even at 180 °C. Modeling of the SCLC showed that all films exhibited shallow trap levels and high trap concentrations. In the regime of steady state leakage, theremore » were also observations of negative differential resistivity and positive temperature coefficient of resistivity near room temperature. Both of these phenomena were confined to relatively low temperatures (below ∼60 °C). Transient currents were observed in the time-dependent leakage data, which was measured out to several hundred seconds. In the undoped films, these were found to be a consequence of oxygen vacancy migration modulating the electronic conductivity. The mobility and thermal activation energy for oxygen vacancies was extracted as μ{sub ion} ≈ 1.7 × 10{sup −12} cm{sup 2} V{sup −1} s{sup −1} and E{sub A,ion} ≈ 0.92 eV, respectively. The transient current displayed different characteristics in the 1 mol. % Mn-doped films which were not readily explained by oxygen vacancy migration.« less

Electron density profile measurements at a self-focusing ion beam with high current density and low energy extracted through concave electrodes.

PubMed

Fujiwara, Y; Hirano, Y; Kiyama, S; Nakamiya, A; Koguchi, H; Sakakita, H

2014-02-01

The self-focusing phenomenon has been observed in a high current density and low energy ion beam. In order to study the mechanism of this phenomenon, a special designed double probe to measure the electron density and temperature is installed into the chamber where the high current density ion beam is injected. Electron density profile is successfully measured without the influence of the ion beam components. Estimated electron temperature and density are ∼0.9 eV and ∼8 × 10(8) cm(-3) at the center of ion beam cross section, respectively. It was found that a large amount of electrons are spontaneously accumulated in the ion beam line in the case of self-forcing state.

Field Performance of Photovoltaic Systems in the Tucson Desert

NASA Astrophysics Data System (ADS)

Orsburn, Sean; Brooks, Adria; Cormode, Daniel; Greenberg, James; Hardesty, Garrett; Lonij, Vincent; Salhab, Anas; St. Germaine, Tyler; Torres, Gabe; Cronin, Alexander

2011-10-01

At the Tucson Electric Power (TEP) solar test yard, over 20 different grid-connected photovoltaic (PV) systems are being tested. The goal at the TEP solar test yard is to measure and model real-world performance of PV systems and to benchmark new technologies such as holographic concentrators. By studying voltage and current produced by the PV systems as a function of incident irradiance, and module temperature, we can compare our measurements of field-performance (in a harsh desert environment) to manufacturer specifications (determined under laboratory conditions). In order to measure high-voltage and high-current signals, we designed and built reliable, accurate sensors that can handle extreme desert temperatures. We will present several benchmarks of sensors in a controlled environment, including shunt resistors and Hall-effect current sensors, to determine temperature drift and accuracy. Finally we will present preliminary field measurements of PV performance for several different PV technologies.

High Energy Density and High Temperature Multilayer Capacitor Films for Electric Vehicle Applications

NASA Astrophysics Data System (ADS)

Treufeld, Imre; Song, Michelle; Zhu, Lei; Baer, Eric; Snyder, Joe; Langhe, Deepak

2015-03-01

Multilayer films (MLFs) with high energy density and high temperature capability (>120 °C) have been developed at Case Western Reserve University. Such films offer a potential solution for electric car DC-link capacitors, where high ripple currents and high temperature tolerance are required. The current state-of-the-art capacitors used in electric cars for converting DC to AC use biaxially oriented polypropylene (BOPP), which can only operate at temperatures up to 85 °C requiring an external cooling system. The polycarbonate (PC)/poly(vinylidene fluoride) (PVDF) MLFs have a higher permittivity compared to that of BOPP (2.3), leading to higher energy density. They have good mechanical stability and reasonably low dielectric losses at 120 °C. Nonetheless, our preliminary dielectric measurements show that the MLFs exhibit appreciable dielectric losses (20%) at 120 °C, which would, despite all the other advantages, make them not suitable for practical applications. Our preliminary data showed that dielectric losses of the MLFs at 120 °C up to 400 MV/m and 1000 Hz originate mostly from impurity ionic conduction. This work is supported by the NSF PFI/BIC Program (IIP-1237708).

Report on FY15 Alloy 617 SMT Creep-Fatigue Test Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yanli; Jetter, Robert I.; Baird, Seth T.

For the temperature range of 990-950C, Alloy 617 is a candidate IHX structural material for high temperature gas reactors (HTGRs) because of its high temperature creep properties. Also, its superior strength over a broad temperature range also offers advantages for certain component applications. In order for the designers to be able to use Alloy 617 for these high temperature components, Alloy 617 has to be approved for use in Section III (the nuclear section) of the ASME (American Society of Mechanical Engineers) Boiler and Pressure Vessel Code. A plan has been developed to propose a Code Case for use ofmore » Alloy 617 at elevated temperature in Section III of the ASME Code by September 2015. There has not been a new high temperature material approved for use in Section III for almost 20 years. The Alloy 617 Code Case effort would lead the way to establish a path for Code qualification of new high temperature materials of interest to other advanced SMRs. Creep-fatigue at elevated temperatures is the most damaging structural failure mode. In the past 40 years significant efforts have been devoted to the elevated temperature Code rule development in Section III, Subsection NH* of the ASME Boiler and Pressure Vessel Code, to ascertain conservative structural designs to prevent creep-fatigue failure. The current Subsection NH creep-fatigue procedure was established by the steps of (1) analytically obtaining a detailed stress-strain history, (2) comparing the stress and strain components to cyclic test results deconstructed into stress and strain quantities, and (3) recombining the results to obtain a damage function in the form of the so-called creep-fatigue damage-diagram. The deconstruction and recombination present difficulties in evaluation of test data and determination of cyclic damage in design. The uncertainties in these steps lead to the use of overly conservative design factors in the current creep-fatigue procedure. In addition, and of major significance to the viability of the Alloy 617 Code Case, the use of the current elastic analysis based rules in Subsection NH for the evaluation of strain limits (a precursor for the creep-fatigue rules) and the creep-fatigue rules themselves have been deemed inappropriate for Alloy 617 at temperatures above 650C (Corum and Brass, 1991). The rationale for this exclusion is that at higher temperatures it is not feasible to decouple plasticity and creep, which is the basis for the current simplified rules. This temperature, 650C, is well below the temperature range of interest for this material for the High Temperature Gas Cooled Reactor (HTGR) as well as the VHTR. The only current alternative is, thus, a full inelastic analysis which requires sophisticated material models which have not yet been formulated and verified. To address the prohibition on the use of current methods at very high temperatures, proposed Code rules have been developed which are based on the use of elastic-perfectly plastic (E-PP) analysis methods and which are expected to be applicable to very high temperatures. To provide data to implement the proposed rules and to verify their application, a series of tests have been initiated. One test concept, the Simplified Model Test (SMT), takes into account the stress and strain redistribution in real structures by including representative follow-up characteristics in the test specimen. The correlation parameter between test and design is the elastically calculated strain, and the dependent test variable is the observed cycles to failure. Although the initial priority for the SMT approach is to generate data to support validation of the E-PP Code Case for evaluation of creep-fatigue damage, the broader goal of the SMT approach is to develop a methodology for evaluation of creep fatigue damage which is simpler to implement than the current complex rules and applicable to the full temperature range from ambient conditions to the very high temperature creep regime of 900-950C. Also, guidance has been received from ASME Code committees that the proposed EPP methodology for evaluation of creep-fatigue damage should be extended to the other Subsection NH materials to the extent feasible. Thus, the scope of testing has been expanded to include SS304H and SS316H. This report describes the SMT approach and the development of testing capability to conduct SMT experiments on Alloy 617 and 304H and 316H and stainless steels. These SMT specimen data are also representative of component loading conditions and have been used as part of the verification of the proposed elastic-perfectly plastic Code Cases. Results from the SMT tests on both Alloy 617 and SS316H were compared to the predictions from the EPP Creep-Fatigue Code Case. Two different comparisons were made; one based on design life equal to the test duration and the other with an acceptable design life determined from the EPP Code Case procedure. The latter approach permits the determination of...« less

Development of next generation tempered and ODS reduced activation ferritic/martensitic steels for fusion energy applications

DOE PAGES

Zinkle, S. J.; Boutard, J. L.; Hoelzer, D. T.; ...

2017-06-09

Reduced activation ferritic/martensitic steels are currently the most technologically mature option for the structural material of proposed fusion energy reactors. Advanced next-generation higher performance steels offer the opportunity for improvements in fusion reactor operational lifetime and reliability, superior neutron radiation damage resistance, higher thermodynamic efficiency, and reduced construction costs. The two main strategies for developing improved steels for fusion energy applications are based on (1) an evolutionary pathway using computational thermodynamics modelling and modified thermomechanical treatments (TMT) to produce higher performance reduced activation ferritic/martensitic (RAFM) steels and (2) a higher risk, potentially higher payoff approach based on powder metallurgy techniquesmore » to produce very high strength oxide dispersion strengthened (ODS) steels capable of operation to very high temperatures and with potentially very high resistance to fusion neutron-induced property degradation. The current development status of these next-generation high performance steels is summarized, and research and development challenges for the successful development of these materials are outlined. In conclusion, material properties including temperature-dependent uniaxial yield strengths, tensile elongations, high-temperature thermal creep, Charpy impact ductile to brittle transient temperature (DBTT) and fracture toughness behaviour, and neutron irradiation-induced low-temperature hardening and embrittlement and intermediate-temperature volumetric void swelling (including effects associated with fusion-relevant helium and hydrogen generation) are described for research heats of the new steels.« less

Development of next generation tempered and ODS reduced activation ferritic/martensitic steels for fusion energy applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zinkle, S. J.; Boutard, J. L.; Hoelzer, D. T.

Reduced activation ferritic/martensitic steels are currently the most technologically mature option for the structural material of proposed fusion energy reactors. Advanced next-generation higher performance steels offer the opportunity for improvements in fusion reactor operational lifetime and reliability, superior neutron radiation damage resistance, higher thermodynamic efficiency, and reduced construction costs. The two main strategies for developing improved steels for fusion energy applications are based on (1) an evolutionary pathway using computational thermodynamics modelling and modified thermomechanical treatments (TMT) to produce higher performance reduced activation ferritic/martensitic (RAFM) steels and (2) a higher risk, potentially higher payoff approach based on powder metallurgy techniquesmore » to produce very high strength oxide dispersion strengthened (ODS) steels capable of operation to very high temperatures and with potentially very high resistance to fusion neutron-induced property degradation. The current development status of these next-generation high performance steels is summarized, and research and development challenges for the successful development of these materials are outlined. In conclusion, material properties including temperature-dependent uniaxial yield strengths, tensile elongations, high-temperature thermal creep, Charpy impact ductile to brittle transient temperature (DBTT) and fracture toughness behaviour, and neutron irradiation-induced low-temperature hardening and embrittlement and intermediate-temperature volumetric void swelling (including effects associated with fusion-relevant helium and hydrogen generation) are described for research heats of the new steels.« less

Development of next generation tempered and ODS reduced activation ferritic/martensitic steels for fusion energy applications

NASA Astrophysics Data System (ADS)

Zinkle, S. J.; Boutard, J. L.; Hoelzer, D. T.; Kimura, A.; Lindau, R.; Odette, G. R.; Rieth, M.; Tan, L.; Tanigawa, H.

2017-09-01

Reduced activation ferritic/martensitic steels are currently the most technologically mature option for the structural material of proposed fusion energy reactors. Advanced next-generation higher performance steels offer the opportunity for improvements in fusion reactor operational lifetime and reliability, superior neutron radiation damage resistance, higher thermodynamic efficiency, and reduced construction costs. The two main strategies for developing improved steels for fusion energy applications are based on (1) an evolutionary pathway using computational thermodynamics modelling and modified thermomechanical treatments (TMT) to produce higher performance reduced activation ferritic/martensitic (RAFM) steels and (2) a higher risk, potentially higher payoff approach based on powder metallurgy techniques to produce very high strength oxide dispersion strengthened (ODS) steels capable of operation to very high temperatures and with potentially very high resistance to fusion neutron-induced property degradation. The current development status of these next-generation high performance steels is summarized, and research and development challenges for the successful development of these materials are outlined. Material properties including temperature-dependent uniaxial yield strengths, tensile elongations, high-temperature thermal creep, Charpy impact ductile to brittle transient temperature (DBTT) and fracture toughness behaviour, and neutron irradiation-induced low-temperature hardening and embrittlement and intermediate-temperature volumetric void swelling (including effects associated with fusion-relevant helium and hydrogen generation) are described for research heats of the new steels.

Development of high temperature gallium phosphide rectifiers

NASA Technical Reports Server (NTRS)

Craford, M. G.; Keune, D. L.

1972-01-01

Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C.

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

PubMed Central

Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Hervé

2010-01-01

Sensor technology is moving towards wide-band-gap semiconductors providing high temperature capable devices. Indeed, the higher thermal conductivity of silicon carbide, (three times more than silicon), permits better heat dissipation and allows better cooling and temperature management. Though many temperature sensors have already been published, little endeavours have been invested in the study of silicon carbide junction field effect devices (SiC-JFET) as a temperature sensor. SiC-JFETs devices are now mature enough and it is close to be commercialized. The use of its specific properties versus temperatures is the major focus of this paper. The SiC-JFETs output current-voltage characteristics are characterized at different temperatures. The saturation current and its on-resistance versus temperature are successfully extracted. It is demonstrated that these parameters are proportional to the absolute temperature. A physics-based model is also presented. Relationships between on-resistance and saturation current versus temperature are introduced. A comparative study between experimental data and simulation results is conducted. Important to note, the proposed model and the experimental results reflect a successful agreement as far as a temperature sensor is concerned. PMID:22315547

Prototyping a new, high-temperature SQUID magnetometer system

NASA Astrophysics Data System (ADS)

Grappone, J. Michael; Shaw, John; Biggin, Andrew J.

2017-04-01

High-sensitivity Superconducting Quantum Inference Devices (SQUIDs) and μ-metal shielding have largely solved paleomagnetic noise problems. Combing the two allows successful measurements of previously unusable samples, generally sediments with very weak (<10 pAm2) magnetizations. The improved sensitivity increases the fidelity of magnetic field variation surveys, but surveys continue to be somewhat slow. SQUIDs have historically been expensive to buy and operate, but technological advances now allow them to operate at liquid nitrogen temperatures (77 K), drastically reducing their costs. Step-wise thermal paleomagnetics studies cause large lag times during later steps as a result of heating from and cooling to room temperature for measurements. If the cooling step is removed entirely, however, the lag time drops by at least half. Available magnetometers currently provide either SQUID-level (0.1 - 1 pAm2) sensitivity or continuous heating. Combining a SQUID magnetometer with a high temperature oven is the logical next step to uncover the mysteries of the paleofield. However, the few that currently offer high temperature capabilities with noise levels approaching 10 pAm2 require either spinning or vibrating the sample, necessitating additional handling and potentially causing damage to the sample. Two primary factors have plagued previous developments: noise levels and temperature gradients. Our entire system is shielded from the environment using 4 layers of μ-metal. Our sample oven (designed for 7 mm diameter samples) sits inside a copper pipe and operates at high-frequency AC voltages. High frequency (10 kHz) AC current reduces the skin depth of radio frequency (RF) electromagnetic noise, which allows the 2 mm-thick copper shielding to reduce RF noise by ˜94%, leaving a residual field of ˜1.5 nT at the SQUID's location, 14.9 mm from the oven. A computer-controlled Eurotherm 3216 thermal controller regulates the temperature within ± 0.5 ˚ C. To reach 700 ˚ C, just above the Curie temperature of Hematite, a temperature difference of nearly 900 ˚ C between the sample and the SQUID is required. Since dipole fields decay rapidly with distance (∝ r -3 ), the equipment is designed to handle temperature gradients above 500 ˚ C cm-1 for maximum sensitivity using a passive double-vacuum separation system. All the parts used are commercially available to help reduce the operating costs and increase versatility.

Proton transport through aqueous Nafion membrane

NASA Astrophysics Data System (ADS)

Son, D. N.; Kasai, H.

2009-08-01

We introduce a new model for proton transport through a single proton-conducting channel of an aqueous Nafion membrane based on a mechanism in which protons move under electrostatic effect provided by the sulfonate ( SO3 -groups of the Nafion side chains, the spin effect of active components, the hydrogen bonding effect with water molecules, and the screening effect of water media. This model can describe the proton transport within various levels of humidification ranging from the low humidity to the high humidity as a function of operating temperature. At low humidity, this model approaches to the so-called surface mechanism, while at high humidity, it approaches the well-known Grotthuss one. Proton motion is considered as the transfer from cluster to cluster under a potential energy. A proton-proton interaction is comprised in the calculation. Using Green function method, we obtained the proton current as a function of the Nafion membrane temperature. We found that the lower the temperature, the higher the proton current transfer through the Nafion membrane in low temperatures compared to the critical point 10K, which separates magnetic regime from non-magnetic regime. The increasing of proton current at very low temperatures is attributed to the spin effect. As the membrane temperature is higher than 40 ° C , the decreasing of proton current is attributed to the loss of water uptake and the polymer contraction. The results of this study are qualitatively in good agreement with experiments. The expression for the critical temperature is also presented as a function of structural and tunable parameters, and interpreted by experimental data. in here

Melt-processing high-T{sub c} superconductors under an elevated magnetic field [Final report no. 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

John B. Vander Sande

2001-09-05

This report presents models for crystallographic texture development for high temperature superconducting oxides processed in the absence of a magnetic field and in the presence of a high magnetic field. The results of the models are confirmed through critical experiments. Processing thick films and tapes of high temperature superconducting oxides under a high magnetic field (5-10T) improves the critical current density exhibited.

Progress of MCT Detector Technology at AIM Towards Smaller Pitch and Lower Dark Current

NASA Astrophysics Data System (ADS)

Eich, D.; Schirmacher, W.; Hanna, S.; Mahlein, K. M.; Fries, P.; Figgemeier, H.

2017-09-01

We present our latest results on cooled p-on- n planar mercury cadmium telluride (MCT) photodiode technology. Along with a reduction in dark current for raising the operating temperature ( T op), AIM INFRAROT-MODULE GmbH (AIM) has devoted its development efforts to shrinking the pixel size. Both are essential requirements to meet the market demands for reduced size, weight and power and high-operating temperature applications. Detectors based on the p-on- n technology developed at AIM now span the spectrum from the mid-wavelength infrared (MWIR) to the very long wavelength infrared (VLWIR) with cut-off wavelengths from 5 μm to about 13.5 μm at 80 K. The development of the p-on- n technology for VLWIR as well as for MWIR is mainly implemented in a planar photodetector design with a 20- μm pixel pitch. For the VLWIR, dark currents significantly reduced as compared to `Tennant's Rule 07' are demonstrated for operating temperatures between 30 K and 100 K. This allows for the same dark current performance at a 20 K higher operating temperature than with previous AIM technology. For MWIR detectors with a 20- μm pitch, noise equivalent temperature differences of less than 30 mK are obtained up to 170 K. This technology has been transferred to our small pixel pitch high resolution (XGA) MWIR detector with 1024 × 768 pixels at a 10- μm pitch. Excellent performance at an operating temperature of 160 K is demonstrated.

100 s extraction of negative ion beams by using actively temperature-controlled plasma grid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kojima, A., E-mail: kojima.atsushi@jaea.go.jp; Hanada, M.; Yoshida, M.

2014-02-15

Long pulse beam extraction with a current density of 120 A/m{sup 2} for 100 s has been achieved with a newly developed plasma grid (PG) for the JT-60SA negative ion source which is designed to produce high power and long pulse beams with a negative ion current of 130 A/m{sup 2} (22 A) and a pulse length of 100 s. The PG temperature is regulated by fluorinated fluids in order to keep the high PG temperature for the cesium-seeded negative ion production. The time constant for temperature controllability of the PG was measured to be below 10 s, which wasmore » mainly determined by the heat transfer coefficient of the fluorinated fluid. The measured decay time of the negative ion current extracted from the actively temperature-controlled PG was 430 s which was sufficient for the JT-60SA requirement, and much longer than that by inertial-cooling PG of 60 s. Obtained results of the long pulse capability are utilized to design the full size PG for the JT-60SA negative ion source.« less

Crowdsourcing urban air temperature measurements using smartphones

NASA Astrophysics Data System (ADS)

Balcerak, Ernie

2013-10-01

Crowdsourced data from cell phone battery temperature sensors could be used to contribute to improved real-time, high-resolution air temperature estimates in urban areas, a new study shows. Temperature observations in cities are in some cases currently limited to a few weather stations, but there are millions of smartphone users in many cities. The batteries in cell phones have temperature sensors to avoid damage to the phone.

Gallium phosphide energy converters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sims, P.E.; Dinetta, L.C.; Goetz, M.A.

1995-10-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp {minus}17) A/sq cm have been measured andmore » the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.« less

Gallium phosphide energy converters

NASA Astrophysics Data System (ADS)

Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

1995-10-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Gallium phosphide energy converters

NASA Technical Reports Server (NTRS)

Sims, P. E.; Dinetta, L. C.; Goetz, M. A.

1995-01-01

Gallium phosphide (GaP) energy converters may be successfully deployed to provide new mission capabilities for spacecraft. Betavoltaic power supplies based on the conversion of tritium beta decay to electricity using GaP energy converters can supply long term low-level power with high reliability. High temperature solar cells, also based on GaP, can be used in inward-bound missions greatly reducing the need for thermal dissipation. Results are presented for GaP direct conversion devices powered by Ni-63 and compared to the conversion of light emitted by tritiarated phosphors. Leakage currents as low as 1.2 x 10(exp -17) A/sq cm have been measured and the temperature dependence of the reverse saturation current is found to have ideal behavior. Temperature dependent IV, QE, R(sub sh), and V(sub oc) results are also presented. These data are used to predict the high-temperature solar cell and betacell performance of GaP devices and suggest appropriate applications for the deployment of this technology.

Synthesis and thermoelectric properties of CoP(sub 3)

NASA Technical Reports Server (NTRS)

Shields, V. B.; Caillet, T.

2002-01-01

In an effort to expand the range of operation for highly efficient, segmented thermoelectric unicouples currently being developed at JPL, skutterudite phosphides are being investigated as potential high temperature segments to supplement antimonide segments that limit the use of these unicouples at a hot-side temperature of about 873-973 K.

Neutron radiation damage and recovery studies of SiPMs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsang, T.; Rao, T.; Stoll, S.

We characterized the performance of Silicon Photomultipliers (SiPMs) before and after exposure of up to 10 12 neutron/cm 2 dosage. We show that the typical orders of magnitude increase of dark current upon neutron irradiation can be suppressed by operating it at a lower temperature and single-photoelectron detection capability can be restored. The required operating temperature depends on the dosage received. Furthermore, after high temperature thermal annealing, there is compelling evidence that the extrinsic dark current is lowered by orders of magnitude and single-photon detection performance are to some extent recovered at room temperature. Our experimental findings might have widespreadmore » implications for extending the functionality and the useful lifetime of current and future large scale SiPM detectors deployed in ionization radiation environment.« less

Sympatric Spawning but Allopatric Distribution of Anguilla japonica and Anguilla marmorata : Temperature- and Oceanic Current-Dependent Sieving

PubMed Central

Han, Yu-San; Yambot, Apolinario V.; Zhang, Heng; Hung, Chia-Ling

2012-01-01

Anguilla japonica and Anguilla marmorata share overlapping spawning sites, similar drifting routes, and comparable larval durations. However, they exhibit allopatric geographical distributions in East Asia. To clarify this ecological discrepancy, glass eels from estuaries in Taiwan, the Philippines, Indonesia, and China were collected monthly, and the survival rate of A. marmorata under varying water salinities and temperatures was examined. The composition ratio of these 2 eel species showed a significant latitude cline, matching the 24°C sea surface temperature isotherm in winter. Both species had opposing temperature preferences for recruitment. A. marmorata prefer high water temperatures and die at low water temperatures. In contrast, A. japonica can endure low water temperatures, but their recruitment is inhibited by high water temperatures. Thus, A. japonica glass eels, which mainly spawn in summer, are preferably recruited to Taiwan, China, Korea, and Japan by the Kuroshio and its branch waters in winter. Meanwhile, A. marmorata glass eels, which spawn throughout the year, are mostly screened out in East Asia in areas with low-temperature coastal waters in winter. During summer, the strong northward currents from the South China Sea and Changjiang River discharge markedly block the Kuroshio invasion and thus restrict the approach of A. marmorata glass eels to the coasts of China and Korea. The differences in the preferences of the recruitment temperature for glass eels combined with the availability of oceanic currents shape the real geographic distribution of Anguilla japonica and Anguilla marmorata, making them “temperate” and “tropical” eels, respectively. PMID:22675481

Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications

NASA Astrophysics Data System (ADS)

Jacobs, K. J. P.; Stevens, B. J.; Baba, R.; Wada, O.; Mukai, T.; Hogg, R. A.

2017-10-01

We report valley current characterisation of high current density InGaAs/AlAs/InP resonant tunnelling diodes (RTDs) grown by metal-organic vapour phase epitaxy (MOVPE) for THz emission, with a view to investigate the origin of the valley current and optimize device performance. By applying a dual-pass fabrication technique, we are able to measure the RTD I-V characteristic for different perimeter/area ratios, which uniquely allows us to investigate the contribution of leakage current to the valley current and its effect on the PVCR from a single device. Temperature dependent (20 - 300 K) characteristics for a device are critically analysed and the effect of temperature on the maximum extractable power (PMAX) and the negative differential conductance (NDC) of the device is investigated. By performing theoretical modelling, we are able to explore the effect of typical variations in structural composition during the growth process on the tunnelling properties of the device, and hence the device performance.

Temperature-Sensitive Coating Sensor Based on Hematite

NASA Technical Reports Server (NTRS)

Bencic, Timothy J.

2011-01-01

A temperature-sensitive coating, based on hematite (iron III oxide), has been developed to measure surface temperature using spectral techniques. The hematite powder is added to a binder that allows the mixture to be painted on the surface of a test specimen. The coating dynamically changes its relative spectral makeup or color with changes in temperature. The color changes from a reddish-brown appearance at room temperature (25 C) to a black-gray appearance at temperatures around 600 C. The color change is reversible and repeatable with temperature cycling from low to high and back to low temperatures. Detection of the spectral changes can be recorded by different sensors, including spectrometers, photodiodes, and cameras. Using a-priori information obtained through calibration experiments in known thermal environments, the color change can then be calibrated to yield accurate quantitative temperature information. Temperature information can be obtained at a point, or over an entire surface, depending on the type of equipment used for data acquisition. Because this innovation uses spectrophotometry principles of operation, rather than the current methods, which use photoluminescence principles, white light can be used for illumination rather than high-intensity short wavelength excitation. The generation of high-intensity white (or potentially filtered long wavelength light) is much easier, and is used more prevalently for photography and video technologies. In outdoor tests, the Sun can be used for short durations as an illumination source as long as the amplitude remains relatively constant. The reflected light is also much higher in intensity than the emitted light from the inefficient current methods. Having a much brighter surface allows a wider array of detection schemes and devices. Because color change is the principle of operation, the development of high-quality, lower-cost digital cameras can be used for detection, as opposed to the high-cost imagers needed for intensity measurements with the current methods. Alternative methods of detection are possible to increase the measurement sensitivity. For example, a monochrome camera can be used with an appropriate filter and a radiometric measurement of normalized intensity change that is proportional to the change coating temperature. Using different spectral regions yields different sensitivities and calibration curves for converting intensity change to temperature units. Alternatively, using a color camera, a ratio of the standard red, green, and blue outputs can be used as a self-referenced change. The blue region (less than 500 nm) does not change nearly as much as the red region (greater than 575 nm), so a ratio of color intensities will yield a calibrated temperature image. The new temperature sensor coating is easy to apply, is inexpensive, can contour complex shape surfaces, and can be a global surface measurement system based on spectrophotometry. The color change, or relative intensity change, at different colors makes the optical detection under white light illumination, and associated interpretation, much easier to measure and interpret than in the detection systems of the current methods.

Towards a 20 kA high temperature superconductor current lead module using REBCO tapes

NASA Astrophysics Data System (ADS)

Heller, R.; Bagrets, N.; Fietz, W. H.; Gröner, F.; Kienzler, A.; Lange, C.; Wolf, M. J.

2018-01-01

Most of the large fusion devices presently under construction or in operation consisting of superconducting magnets like EAST, Wendelstein 7-X (W7-X), JT-60SA, and ITER, use high temperature superconductor (HTS) current leads (CL) to reduce the cryogenic load and operational cost. In all cases, the 1st generation HTS material Bi-2223 is used which is embedded in a low-conductivity matrix of AgAu. In the meantime, industry worldwide concentrates on the production of the 2nd generation HTS REBCO material because of the better field performance in particular at higher temperature. As the new material can only be produced in a multilayer thin-film structure rather than as a multi-filamentary tape, the technology developed for Bi-2223-based current leads cannot be transferred directly to REBCO. Therefore, several laboratories are presently investigating the design of high current HTS current leads made of REBCO. Karlsruhe Institute of Technology is developing a 20 kA HTS current lead using brass-stabilized REBCO tapes—as a further development to the Bi-2223 design used in the JT-60SA current leads. The same copper heat exchanger module as in the 20 kA JT-60SA current lead will be used for simplicity, which will allow a comparison of the newly developed REBCO CL with the earlier produced and investigated CL for JT-60SA. The present paper discusses the design and accompanying test of single tape and stack REBCO mock-ups. Finally, the fabrication of the HTS module using REBCO stacks is described.

Current and temperature distributions in-situ acquired by electrode-segmentation along a microtubular solid oxide fuel cell operating with syngas

NASA Astrophysics Data System (ADS)

Aydın, Özgür; Nakajima, Hironori; Kitahara, Tatsumi

2015-10-01

Addressing the fuel distribution and endothermic cooling by the internal reforming, we have measured longitudinal current/temperature variations by ;Electrode-segmentation; in a microtubular solid oxide fuel cell operated with syngas (50% pre-reformed methane) and equivalent H2/N2 (100% conversion of syngas to H2) at three different flow rates. Regardless of the syngas flow rates, currents and temperatures show irregular fluctuations with varying amplitudes from upstream to downstream segment. Analysis of the fluctuations suggests that the methane steam reforming reaction is highly affected by the H2 partial pressure. Current-voltage curves plotted for the syngas and equivalent H2/N2 flow rates reveal that the fuel depletion is enhanced toward the downstream during the syngas operation, resulting in a larger performance degradation. All the segments exhibit temperature drops with the syngas flow compared with the equivalent H2/N2 flow due to the endothermic cooling by the methane steam reforming reaction. Despite the drops, the segment temperatures remain above the furnace temperature; besides, the maximum temperature difference along the cell diminishes. The MSR reaction rate does not consistently increase with the decreasing gas inlet velocity (increasing residence time on the catalyst); which we ascribe to the dominating impact of the local temperatures.

Packaging Technologies for 500C SiC Electronics and Sensors

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu

2013-01-01

Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawarada, H., E-mail: kawarada@waseda.jp; Institute of Nano-Science and Nano-Engineering, Waseda University, Shinjuku, Tokyo 169-8555; Kagami Memorial Laboratory for Material Science and Technology, Waseda University, Shinjuku, Tokyo 169-0051

2014-07-07

By forming a highly stable Al{sub 2}O{sub 3} gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400 °C (673 K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (V{sub B}) of the MOSFET without a field plate is 600 V at a gate-drain distance (L{sub GD}) of 7 μm. We fabricated some MOSFETs for which V{sub B}/L{sub GD} > 100 V/μm. These values are comparable to those of lateral SiC or GaN FETs. The Al{sub 2}O{sub 3} was deposited on the C-Hmore » surface by atomic layer deposition (ALD) at 450 °C using H{sub 2}O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400 °C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400 °C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.« less

Effect of Discontinuities and Penetrations on the Shielding Efficacy of High Temperature Superconducting Magnetic Shields

NASA Astrophysics Data System (ADS)

Hatwar, R.; Kvitkovic, J.; Herman, C.; Pamidi, S.

2015-12-01

High Temperature Superconducting (HTS) materials have been demonstrated to be suitable for applications in shielding of both DC and AC magnetic fields. Magnetic shielding is required for protecting sensitive instrumentation from external magnetic fields and for preventing the stray magnetic fields produced by high power density equipment from affecting neighbouring devices. HTS shields have high current densities at relatively high operating temperatures (40-77 K) and can be easily fabricated using commercial HTS conductor. High current densities in HTS materials allow design and fabrication of magnetic shields that are lighter and can be incorporated into the body and skin of high power density devices. HTS shields are particularly attractive for HTS devices because a single cryogenic system can be used for cooling the device and the associated shield. Typical power devices need penetrations for power and signal cabling and the penetrations create discontinuities in HTS shields. Hence it is important to assess the effect of the necessary discontinuities on the efficacy of the shields and the design modifications necessary to accommodate the penetrations.

Overview of MST Results and Plans

NASA Astrophysics Data System (ADS)

Sarff, J. S.

2008-11-01

Improved confinement with high beta has been established in MST over its full range of plasma current capability using transient inductive current profile control. Both thermal electron and ion confinement are increased, and energetic electrons are observed to 100 keV. The global energy confinement time is 12 ms at high current and high temperature (Te=2 keV, Ti =1 keV), with βtot=10% (only Ohmic heating). Maximum βtot=26% is attained at lower current and temperature with D2 pellet injection, without evidence of hard-beta-limit phenomena. Momentum transport associated with MHD tearing shows the fascinating behavior that the Maxwell and Reynolds turbulent stresses are both large but oppositely directed in sawtooth magnetic relaxation events. Momentum is transported rapidly in these events, presumably through the imbalance in the stresses. Electron temperature fluctuations associated with MHD tearing are measured using a multi-point, multi-pulse Thomson scattering diagnostic. A 5-250 kHz pulse-burst laser is under construction to extend the Thomson capability to high frequency. Lower hybrid and electron Bernstein wave injection are under development to provide more sustained current profile control and heating. X-ray emission from the plasma is observed for both waves at 175 kW injected power. Substantial new experimental capability will be provided by a recently installed programmable power supply for the toroidal field, a new 1 MW, 20 ms neutral beam injection system, and upgraded OFCD system. Supported by U.S. DoE and NSF.

Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2017-04-01

In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300-433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300-800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier height are found to increase, whereas ideality factor is started decreasing. This phenomenon confirms that barrier inhomogeneities are present at the interface of ZnO/Si heterojunction, as a result of lattice constant and thermal coefficient mismatch between Si and ZnO. Therefore, a modified value of Richardson constant [33.06 Acm-2K-2] has been extracted from the temperature-dependent electrical characteristics after assuming the Gaussian distribution of special barrier height inhomogeneities across the Si/ZnO interface which is close to its theoretical value [32 Acm-2K-2]. This result indicates that regardless of presence of barrier height inmogeneities, ZnO/Si heterojunction diode still hasability to perform well in high temperature environment.

An empirical model for parameters affecting energy consumption in boron removal from boron-containing wastewaters by electrocoagulation.

PubMed

Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar

2007-06-01

In this study, it was investigated parameters affecting energy consumption in boron removal from boron containing wastewaters prepared synthetically, via electrocoagulation method. The solution pH, initial boron concentration, dose of supporting electrolyte, current density and temperature of solution were selected as experimental parameters affecting energy consumption. The obtained experimental results showed that boron removal efficiency reached up to 99% under optimum conditions, in which solution pH was 8.0, current density 6.0 mA/cm(2), initial boron concentration 100mg/L and solution temperature 293 K. The current density was an important parameter affecting energy consumption too. High current density applied to electrocoagulation cell increased energy consumption. Increasing solution temperature caused to decrease energy consumption that high temperature decreased potential applied under constant current density. That increasing initial boron concentration and dose of supporting electrolyte caused to increase specific conductivity of solution decreased energy consumption. As a result, it was seen that energy consumption for boron removal via electrocoagulation method could be minimized at optimum conditions. An empirical model was predicted by statistically. Experimentally obtained values were fitted with values predicted from empirical model being as following; [formula in text]. Unfortunately, the conditions obtained for optimum boron removal were not the conditions obtained for minimum energy consumption. It was determined that support electrolyte must be used for increase boron removal and decrease electrical energy consumption.

Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gillinger, M.; Schneider, M.; Bittner, A.

2015-02-14

Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 hmore » in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.« less

Merging-compression formation of high temperature tokamak plasma

NASA Astrophysics Data System (ADS)

Gryaznevich, M. P.; Sykes, A.

2017-07-01

Merging-compression is a solenoid-free plasma formation method used in spherical tokamaks (STs). Two plasma rings are formed and merged via magnetic reconnection into one plasma ring that then is radially compressed to form the ST configuration. Plasma currents of several hundred kA and plasma temperatures in the keV-range have been produced using this method, however until recently there was no full understanding of the merging-compression formation physics. In this paper we explain in detail, for the first time, all stages of the merging-compression plasma formation. This method will be used to create ST plasmas in the compact (R ~ 0.4-0.6 m) high field, high current (3 T/2 MA) ST40 tokamak. Moderate extrapolation from the available experimental data suggests the possibility of achieving plasma current ~2 MA, and 10 keV range temperatures at densities ~1-5  ×  1020 m-3, bringing ST40 plasmas into a burning plasma (alpha particle heating) relevant conditions directly from the plasma formation. Issues connected with this approach for ST40 and future ST reactors are discussed

Achieving High Current Density of Perovskite Solar Cells by Modulating the Dominated Facets of Room-Temperature DC Magnetron Sputtered TiO2 Electron Extraction Layer.

PubMed

Huang, Aibin; Lei, Lei; Zhu, Jingting; Yu, Yu; Liu, Yan; Yang, Songwang; Bao, Shanhu; Cao, Xun; Jin, Ping

2017-01-25

The short circuit current density of perovskite solar cell (PSC) was boosted by modulating the dominated plane facets of TiO 2 electron transport layer (ETL). Under optimized condition, TiO 2 with dominant {001} facets showed (i) low incident light loss, (ii) highly smooth surface and excellent wettability for precursor solution, (iii) efficient electron extraction, and (iv) high conductivity in perovskite photovoltaic application. A current density of 24.19 mA cm -2 was achieved as a value near the maximum limit. The power conversion efficiency was improved to 17.25%, which was the record value of PSCs with DC magnetron sputtered carrier transport layer. What is more, the room-temperature process had a great significance for the cost reduction and flexible application of PSCs.

Kiloampere, Variable-Temperature, Critical-Current Measurements of High-Field Superconductors

PubMed Central

Goodrich, LF; Cheggour, N; Stauffer, TC; Filla, BJ; Lu, XF

2013-01-01

We review variable-temperature, transport critical-current (Ic) measurements made on commercial superconductors over a range of critical currents from less than 0.1 A to about 1 kA. We have developed and used a number of systems to make these measurements over the last 15 years. Two exemplary variable-temperature systems with coil sample geometries will be described: a probe that is only variable-temperature and a probe that is variable-temperature and variable-strain. The most significant challenge for these measurements is temperature stability, since large amounts of heat can be generated by the flow of high current through the resistive sample fixture. Therefore, a significant portion of this review is focused on the reduction of temperature errors to less than ±0.05 K in such measurements. A key feature of our system is a pre-regulator that converts a flow of liquid helium to gas and heats the gas to a temperature close to the target sample temperature. The pre-regulator is not in close proximity to the sample and it is controlled independently of the sample temperature. This allows us to independently control the total cooling power, and thereby fine tune the sample cooling power at any sample temperature. The same general temperature-control philosophy is used in all of our variable-temperature systems, but the addition of another variable, such as strain, forces compromises in design and results in some differences in operation and protocol. These aspects are analyzed to assess the extent to which the protocols for our systems might be generalized to other systems at other laboratories. Our approach to variable-temperature measurements is also placed in the general context of measurement-system design, and the perceived advantages and disadvantages of design choices are presented. To verify the accuracy of the variable-temperature measurements, we compared critical-current values obtained on a specimen immersed in liquid helium (“liquid” or Ic liq) at 5 K to those measured on the same specimen in flowing helium gas (“gas” or Ic gas) at the same temperature. These comparisons indicate the temperature control is effective over the superconducting wire length between the voltage taps, and this condition is valid for all types of sample investigated, including Nb-Ti, Nb3Sn, and MgB2 wires. The liquid/gas comparisons are used to study the variable-temperature measurement protocol that was necessary to obtain the “correct” critical current, which was assumed to be the Ic liq. We also calibrated the magnetoresistance effect of resistive thermometers for temperatures from 4 K to 35 K and magnetic fields from 0 T to 16 T. This calibration reduces systematic errors in the variable-temperature data, but it does not affect the liquid/gas comparison since the same thermometers are used in both cases. PMID:26401435

High Detectivity Graphene-Silicon Heterojunction Photodetector.

PubMed

Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

2016-02-03

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current and efficiency optimization under oscillating forces in entropic barriers

NASA Astrophysics Data System (ADS)

Nutku, Ferhat; Aydıner, Ekrem

2016-09-01

The transport of externally overdriven particles confined in entropic barriers is investigated under various types of oscillating and temporal forces. Temperature, load, and amplitude dependence of the particle current and energy conversion efficiency are investigated in three dimensions. For oscillating forces, the optimized temperature-load, amplitude-temperature, and amplitude-load intervals are determined when fixing the amplitude, load, and temperature, respectively. By using three-dimensional plots rather than two-dimensional ones, it is clearly shown that oscillating forces provide more efficiency compared with a temporal one in specified optimized parameter regions. Furthermore, the dependency of efficiency to the angle between the unbiased driving force and a constant force is investigated and an asymmetric angular dependence is found for all types of forces. Finally, it is shown that oscillating forces with a high amplitude and under a moderate load lead to higher efficiencies than a temporal force at both low and high temperatures for the entire range of contact angle. Project supported by the Istanbul University, Turkey (Grant No. 55383).

Corrosion of Ceramic Materials

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Jacobson, Nathan S.

1999-01-01

Non-oxide ceramics are promising materials for a range of high temperature applications. Selected current and future applications are listed. In all such applications, the ceramics are exposed to high temperature gases. Therefore it is critical to understand the response of these materials to their environment. The variables to be considered here include both the type of ceramic and the environment to which it is exposed. Non-oxide ceramics include borides, nitrides, and carbides. Most high temperature corrosion environments contain oxygen and hence the emphasis of this chapter will be on oxidation processes.

High temperature solar thermal technology

NASA Technical Reports Server (NTRS)

Leibowitz, L. P.; Hanseth, E. J.; Peelgren, M. L.

1980-01-01

Some advanced technology concepts under development for high-temperature solar thermal energy systems to achieve significant energy cost reductions and performance gains and thus promote the application of solar thermal power technology are presented. Consideration is given to the objectives, current efforts and recent test and analysis results in the development of high-temperature (950-1650 C) ceramic receivers, thermal storage module checker stoves, and the use of reversible chemical reactions to transport collected solar energy. It is pointed out that the analysis and testing of such components will accelerate the commercial deployment of solar energy.

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

NASA Astrophysics Data System (ADS)

Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

2014-05-01

We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

Growth of carbon nanotubes on fully processed silicon-on-insulator CMOS substrates.

PubMed

Haque, M Samiul; Ali, S Zeeshan; Guha, P K; Oei, S P; Park, J; Maeng, S; Teo, K B K; Udrea, F; Milne, W I

2008-11-01

This paper describes the growth of Carbon Nanotubes (CNTs) both aligned and non-aligned on fully processed CMOS substrates containing high temperature tungsten metallization. While the growth method has been demonstrated in fabricating CNT gas sensitive layers for high temperatures SOI CMOS sensors, it can be employed in a variety of applications which require the use of CNTs or other nanomaterials with CMOS electronics. In our experiments we have grown CNTs both on SOI CMOS substrates and SOI CMOS microhotplates (suspended on membranes formed by post-CMOS deep RIE etching). The fully processed SOI substrates contain CMOS devices and circuits and additionally, some wafers contained high current LDMOSFETs and bipolar structures such as Lateral Insulated Gate Bipolar Transistors. All these devices were used as test structures to investigate the effect of additional post-CMOS processing such as CNT growth, membrane formation, high temperature annealing, etc. Electrical characterisation of the devices with CNTs were performed along with SEM and Raman spectroscopy. The CNTs were grown both at low and high temperatures, the former being compatible with Aluminium metallization while the latter being possible through the use of the high temperature CMOS metallization (Tungsten). In both cases we have found that there is no change in the electrical behaviour of the CMOS devices, circuits or the high current devices. A slight degradation of the thermal performance of the CMOS microhotplates was observed due to the extra heat dissipation path created by the CNT layers, but this is expected as CNTs exhibit a high thermal conductance. In addition we also observed that in the case of high temperature CNT growth a slight degradation in the manufacturing yield was observed. This is especially the case where large area membranes with a diameter in excess of 500 microns are used.

Global Warming Will Bring New Fungal Diseases for Mammals

PubMed Central

Garcia-Solache, Monica A.; Casadevall, Arturo

2010-01-01

ABSTRACT Fungi are major pathogens of plants, other fungi, rotifers, insects, and amphibians, but relatively few cause disease in mammals. Fungi became important human pathogens only in the late 20th century, primarily in hosts with impaired immunity as a consequence of medical interventions or HIV infection. The relatively high resistance of mammals has been attributed to a combination of a complex immune system and endothermy. Mammals maintain high body temperatures relative to environmental temperatures, creating a thermally restrictive ambient for the majority of fungi. According to this view, protection given by endothermy requires a temperature gradient between those of mammals and the environment. We hypothesize that global warming will increase the prevalence of fungal diseases in mammals by two mechanisms: (i) increasing the geographic range of currently pathogenic species and (ii) selecting for adaptive thermotolerance for species with significant pathogenic potential but currently not pathogenic by virtue of being restricted by mammalian temperatures. PMID:20689745

High temperature ceramic-tubed reformer

NASA Astrophysics Data System (ADS)

Williams, Joseph J.; Rosenberg, Robert A.; McDonough, Lane J.

1990-03-01

The overall objective of the HiPHES project is to develop an advanced high-pressure heat exchanger for a convective steam/methane reformer. The HiPHES steam/methane reformer is a convective, shell and tube type, catalytic reactor. The use of ceramic tubes will allow reaction temperature higher than the current state-of-the-art outlet temperatures of about 1600 F using metal tubes. Higher reaction temperatures increase feedstock conversion to synthesis gas and reduce energy requirements compared to currently available radiant-box type reformers using metal tubes. Reforming of natural gas is the principal method used to produce synthesis gas (primarily hydrogen and carbon monoxide, H2 and CO) which is used to produce hydrogen (for refinery upgrading), methanol, as well as several other important materials. The HiPHES reformer development is an extension of Stone and Webster's efforts to develop a metal-tubed convective reformer integrated with a gas turbine cycle.

Low temperature superconductor and aligned high temperature superconductor magnetic dipole system and method for producing high magnetic fields

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Ramesh; Scanlan, Ronald; Ghosh, Arup K.

A dipole-magnet system and method for producing high-magnetic-fields, including an open-region located in a radially-central-region to allow particle-beam transport and other uses, low-temperature-superconducting-coils comprised of low-temperature-superconducting-wire located in radially-outward-regions to generate high magnetic-fields, high-temperature-superconducting-coils comprised of high-temperature-superconducting-tape located in radially-inward-regions to generate even higher magnetic-fields and to reduce erroneous fields, support-structures to support the coils against large Lorentz-forces, a liquid-helium-system to cool the coils, and electrical-contacts to allow electric-current into and out of the coils. The high-temperature-superconducting-tape may be comprised of bismuth-strontium-calcium-copper-oxide or rare-earth-metal, barium-copper-oxide (ReBCO) where the rare-earth-metal may be yttrium, samarium, neodymium, or gadolinium. Advantageously, alignment of themore » large-dimension of the rectangular-cross-section or curved-cross-section of the high-temperature-superconducting-tape with the high-magnetic-field minimizes unwanted erroneous magnetic fields. Alignment may be accomplished by proper positioning, tilting the high-temperature-superconducting-coils, forming the high-temperature-superconducting-coils into a curved-cross-section, placing nonconducting wedge-shaped-material between windings, placing nonconducting curved-and-wedge-shaped-material between windings, or by a combination of these techniques.« less

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Technical Reports Server (NTRS)

Lebron-Velilla, Ramon C.; Schwarze, Gene E.; Gardner, Brent G.; Adams, Jerry

2004-01-01

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

A novel high temperature superconducting magnetic flux pump for MRI magnets

NASA Astrophysics Data System (ADS)

Bai, Zhiming; Yan, Guo; Wu, Chunli; Ding, Shufang; Chen, Chuan

2010-10-01

This paper presents a kind of minitype magnetic flux pump made of high temperature superconductor. This kind of novel high temperature superconducting (HTS) flux pump has not any mechanical revolving parts or thermal switches. The excitation current of copper coils in magnetic pole system is controlled by a singlechip. The structure design and operational principle have been described. The operating performance of the new model magnetic flux pump has been preliminarily tested. The experiments show that the maximum pumping current is approximately 200 A for Bi2223 flux pump and 80 A for MgB 2 flux pump operating at 20 K. By comparison, it is discovered that the operating temperature range is wider, the ripple is smaller and the pumping frequency is higher in Bi2223 flux pump than those in MgB 2 flux pump. These results indicate that the newly developed Bi2223 magnetic flux pump may efficiently compensate the magnetic field decay in HTS magnet and make the magnet operate in persistent current mode, this point is significant to the magnetic resonance imaging (MRI) magnets. This new flux pump is under construction presently. It is expected that the Bi2223 flux pump would be applied to the superconducting MRI magnets by further optimizing structure and improving working process.

High-rate/high-temperature capability of a single-layer zicar-separator nickel-hydrogen cell

NASA Technical Reports Server (NTRS)

Wheeler, James R.

1995-01-01

A 50 Ampere-hour nickel-hydrogen cell with a single-layer Zircar separator stack design was fully charged and then discharged at a 2C current rate to an end voltage of 1 volt. This extreme test resulted in high temperatures which were recorded at three locations on the cell, i.e., the cell wall, the boss (barrel of the compression seal), and a terminal. The results provide new information about the high-temperature and high-discharge-rate capabilities of nickel-hydrogen cells. This information also adds to the growing data base for single-layer zirconium-oxide-cloth (Zircar) separator cell designs.

Progress in advanced high temperature materials technology

NASA Technical Reports Server (NTRS)

Freche, J. C.; Ault, G. M.

1976-01-01

Significant progress has recently been made in many high temperature material categories pertinent to such applications by the industrial community. These include metal matrix composites, superalloys, directionally solidified eutectics, coatings, and ceramics. Each of these material categories is reviewed and the current state-of-the-art identified, including some assessment, when appropriate, of progress, problems, and future directions.

High Temperature Test Facility Preliminary RELAP5-3D Input Model Description

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bayless, Paul David

A RELAP5-3D input model is being developed for the High Temperature Test Facility at Oregon State University. The current model is described in detail. Further refinements will be made to the model as final as-built drawings are released and when system characterization data are available for benchmarking the input model.

Evaluation of annual efficiencies of high temperature central receiver concentrated solar power plants with thermal energy storage.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhart, Brian David; Gill, David Dennis

The current study has examined four cases of a central receiver concentrated solar power plant with thermal energy storage using the DELSOL and SOLERGY computer codes. The current state-of-the-art base case was compared with a theoretical high temperature case which was based on the scaling of some input parameters and the estimation of other parameters based on performance targets from the Department of Energy SunShot Initiative. This comparison was done for both current and high temperature cases in two configurations: a surround field with an external cylindrical receiver and a north field with a single cavity receiver. There is amore » fairly dramatic difference between the design point and annual average performance, especially in the solar field and receiver subsystems, and also in energy losses due to the thermal energy storage being full to capacity. Additionally, there are relatively small differences (<2%) in annual average efficiencies between the Base and High Temperature cases, despite an increase in thermal to electric conversion efficiency of over 8%. This is due the increased thermal losses at higher temperature and operational losses due to subsystem start-up and shut-down. Thermal energy storage can mitigate some of these losses by utilizing larger thermal energy storage to ensure that the electric power production system does not need to stop and re-start as often, but solar energy is inherently transient. Economic and cost considerations were not considered here, but will have a significant impact on solar thermal electric power production strategy and sizing.« less

A Ti-V-based bcc phase alloy for use as metal hydride electrode with high discharge capacity

NASA Astrophysics Data System (ADS)

Yu, X. B.; Wu, Z.; Xia, B. J.; Xu, N. X.

2004-07-01

The electrochemical characteristics of single bcc phase Ti-30V-15Cr-15Mn alloy were investigated. It was demonstrated that the single bcc phase alloy has high electrochemical discharge performance at high temperature. Its discharge capacity is closely related with temperature and discharge current. The first discharge capacities of 580-814 mAh g-1 of the alloy powder were obtained at discharge current of 45-10 mA g-1 in 6 M KOH solution at 353 K. Although the electrochemical cycle life of the alloy is unsatisfactory at present, it opens up prospects for developing a new hydrogen storage alloy with high hydrogen capacity for use as high performance metal hydride electrodes in rechargeable Ni-MH battery.

A Ti-V-based bcc phase alloy for use as metal hydride electrode with high discharge capacity.

PubMed

Yu, X B; Wu, Z; Xia, B J; Xu, N X

2004-07-08

The electrochemical characteristics of single bcc phase Ti-30V-15Cr-15Mn alloy were investigated. It was demonstrated that the single bcc phase alloy has high electrochemical discharge performance at high temperature. Its discharge capacity is closely related with temperature and discharge current. The first discharge capacities of 580-814 mAh g(-1) of the alloy powder were obtained at discharge current of 45-10 mA g(-1) in 6 M KOH solution at 353 K. Although the electrochemical cycle life of the alloy is unsatisfactory at present, it opens up prospects for developing a new hydrogen storage alloy with high hydrogen capacity for use as high performance metal hydride electrodes in rechargeable Ni-MH battery.

Lattice Thermal Conductivity of Ultra High Temperature Ceramics ZrB2 and HfB2 from Atomistic Simulations

NASA Technical Reports Server (NTRS)

Lawson, John W.; Murray, Daw S.; Bauschlicher, Charles W., Jr.

2011-01-01

Atomistic Green-Kubo simulations are performed to evaluate the lattice thermal conductivity for single crystals of the ultra high temperature ceramics ZrB2 and HfB2 for a range of temperatures. Recently developed interatomic potentials are used for these simulations. Heat current correlation functions show rapid oscillations which can be identified with mixed metal-Boron optical phonon modes. Agreement with available experimental data is good.

Distributed condition monitoring techniques of optical fiber composite power cable in smart grid

NASA Astrophysics Data System (ADS)

Sun, Zhihui; Liu, Yuan; Wang, Chang; Liu, Tongyu

2011-11-01

Optical fiber composite power cable such as optical phase conductor (OPPC) is significant for the development of smart grid. This paper discusses the distributed cable condition monitoring techniques of the OPPC, which adopts embedded single-mode fiber as the sensing medium. By applying optical time domain reflection and laser Raman scattering, high-resolution spatial positioning and high-precision distributed temperature measurement is executed. And the OPPC cable condition parameters including temperature and its location, current carrying capacity, and location of fracture and loss can be monitored online. OPPC cable distributed condition monitoring experimental system is set up, and the main parts including pulsed fiber laser, weak Raman signal reception, high speed acquisition and cumulative average processing, temperature demodulation and current carrying capacity analysis are introduced. The distributed cable condition monitoring techniques of the OPPC is significant for power transmission management and security.

Enhancing Piezoelectric Performance of CaBi2Nb2O9 Ceramics Through Microstructure Control

NASA Astrophysics Data System (ADS)

Chen, Huanbei; Zhai, Jiwei

2012-08-01

Calcium bismuth niobate (CaBi2Nb2O9, CBN) is a high-Curie-temperature ( T C) piezoelectric material with relatively poor piezoelectric performance. Attempts were made to enhance the piezoelectric and direct-current (DC) resistive properties of CBN ceramics by increasing their density and controlling their microstructural texture, which were achieved by combining the templated grain growth and hot pressing methods. The modified CBN ceramics with 97.5% relative density and 90.5% Lotgering factor had much higher piezoelectric constant ( d 33 = 20 pC/N) than those prepared by the normal sintering process ( d 33 = 6 pC/N). High-temperature alternating-current (AC) impedance spectroscopy of the CBN ceramics was measured by using an impedance/gain-phase analyzer. Their electrical resistivity was approximately 6.5 × 104 Ω cm at 600°C. Therefore, CBN ceramics can be used for high-temperature piezoelectric applications.

Fabrication and electrical characterization of Al/diazo compound containing polyoxy chain/p-Si device structure

NASA Astrophysics Data System (ADS)

Birel, Ozgul; Kavasoglu, Nese; Kavasoglu, A. Sertap; Dincalp, Haluk; Metin, Bengul

2013-03-01

Diazo-compounds are important class of chemical compounds in terms of optical and electronic properties which make them potentially attractive for device applications. Diazo compound containing polyoxy chain has been deposited on p-Si. Current-voltage characteristics of Al/diazo compound containing polyoxy chain/p-Si structure present rectifying behaviour. The Schottky barrier height (SBH), diode factor (n), reverse saturation current (Io), interface state density (Nss) of Al/diazo compound containing polyoxy chain/p-Si structure have been calculated from experimental forward bias current-voltage data measured in the temperature range 100-320 K and capacitance-voltage data measured at room temperature and 1 MHz. The calculated values of SBH have ranged from 0.041 and 0.151 eV for the high and low temperature regions. Diode factor values fluctuate between the values 14 and 18 with temperature. Such a high diode factors stem from disordered interface layer in a junction structure as stated by Brötzmann et al. [M. Brötzmann, U. Vetter, H. Hofsäss, J. Appl. Phys. 106 (2009) 063704]. The calculated values of saturation current have ranged from 3×10-11 A to 2.79×10-7 A and interface state density have ranged from 5×1011 eV-1 cm-2 and 4×1013 eV-1 cm-2 as temperature increases. Results show that Al/diazo compound containing polyoxy chain/p-Si structure is a valuable candidate for device applications in terms of low reverse saturation current and low interface state density.

Temperature dependence of the electrode kinetics of oxygen reduction at the platinum/Nafion interface - A microelectrode investigation

NASA Technical Reports Server (NTRS)

Parthasarathy, Arvind; Srinivasan, Supramanian; Appleby, A. J.; Martin, Charles R.

1992-01-01

Results of a study of the temperature dependence of the oxygen reduction kinetics at the Pt/Nafion interface are presented. This study was carried out in the temperature range of 30-80 C and at 5 atm of oxygen pressure. The results showed a linear increase of the Tafel slope with temperature in the low current density region, but the Tafel slope was found to be independent of temperature in the high current density region. The values of the activation energy for oxygen reduction at the platinum/Nafion interface are nearly the same as those obtained at the platinum/trifluoromethane sulfonic acid interface but less than values obtained at the Pt/H3PO4 and Pt/HClO4 interfaces. The diffusion coefficient of oxygen in Nafion increases with temperature while its solubility decreases with temperature. These temperatures also depend on the water content of the membrane.

Practical fit functions for transport critical current versus field magnitude and angle data from (RE)BCO coated conductors at fixed low temperatures and in high magnetic fields

NASA Astrophysics Data System (ADS)

Hilton, D. K.; Gavrilin, A. V.; Trociewitz, U. P.

2015-07-01

Applications of (RE = Y, Gd)BCO coated conductors for the generation of high magnetic fields are increasing sharply, this while (RE)BCO coated conductors themselves are evolving rapidly. This article describes and demonstrates recently developed and applied mathematical models that systematically and comprehensively characterize the transport critical current angular dependence of a batch of (RE)BCO coated conductor in high magnetic fields at fixed temperatures with an uncertainty of 10% or better. The model development was based on analysis of experimental data sets from various published sources and coated conductors with different microstructures. These derivations directly are applicable to the accurate prediction of the performance in high magnetic fields of coils wound with (RE)BCO coated conductors. In particular, a nonlinear fit is discussed in this article of transport critical current at T = 4.2 K versus field and angle data. This fit was used to estimate the hysteresis losses of (RE)BCO coated conductors in high magnetic fields, and to design the inserts wound with such conductors of the all-superconducting 32 T magnet being constructed at the NHMFL. A series of such fits, recently developed at several fixed temperatures, continues to be used to simulate the quench behavior of that magnet.

“Thermal Stabilization Effect” of Al2O3 nano-dopants improves the high-temperature dielectric performance of polyimide

PubMed Central

Yang, Yang; He, Jinliang; Wu, Guangning; Hu, Jun

2015-01-01

Insulation performance of the dielectrics under extreme conditions always attracts widespread attention in electrical and electronic field. How to improve the high-temperature dielectric properties of insulation materials is one of the key issues in insulation system design of electrical devices. This paper studies the temperature-dependent corona resistance of polyimide (PI)/Al2O3 nanocomposite films under high-frequency square-wave pulse conditions. Extended corona resistant lifetime under high-temperature conditions is experimentally observed in the 2 wt% nanocomposite samples. The “thermal stabilization effect” is proposed to explain this phenomenon which attributes to a new kind of trap band caused by nanoparticles. This effect brings about superior space charge characteristics and corona resistance under high temperature with certain nano-doping concentration. The proposed theory is experimentally demonstrated by space charge analysis and thermally stimulated current (TSC) tests. This discovered effect is of profound significance on improving high-temperature dielectric properties of nanocomposites towards various applications. PMID:26597981

High temperature radiance spectroscopy measurements of solid and liquid uranium and plutonium carbides

NASA Astrophysics Data System (ADS)

Manara, D.; De Bruycker, F.; Boboridis, K.; Tougait, O.; Eloirdi, R.; Malki, M.

2012-07-01

In this work, an experimental study of the radiance of liquid and solid uranium and plutonium carbides at wavelengths 550 nm ⩽ λ ⩽ 920 nm is reported. A fast multi-channel spectro-pyrometer has been employed for the radiance measurements of samples heated up to and beyond their melting point by laser irradiation. The melting temperature of uranium monocarbide, soundly established at 2780 K, has been taken as a radiance reference. Based on it, a wavelength-dependence has been obtained for the high-temperature spectral emissivity of some uranium carbides (1 ⩽ C/U ⩽ 2). Similarly, the peritectic temperature of plutonium monocarbide (1900 K) has been used as a reference for plutonium monocarbide and sesquicarbide. The present spectral emissivities of solid uranium and plutonium carbides are close to 0.5 at 650 nm, in agreement with previous literature values. However, their high temperature behaviour, values in the liquid, and carbon-content and wavelength dependencies in the visible-near infrared range have been determined here for the first time. Liquid uranium carbide seems to interact with electromagnetic radiation in a more metallic way than does the solid, whereas a similar effect has not been observed for plutonium carbides. The current emissivity values have also been used to convert the measured radiance spectra into real temperature, and thus perform a thermal analysis of the laser heated samples. Some high-temperature phase boundaries in the systems U-C and Pu-C are shortly discussed on the basis of the current results.

Volatility of Common Protective Oxides in High-Temperature Water Vapor: Current Understanding and Unanswered Questions

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.

2004-01-01

Many structural materials rely on the formation of chromia, silica or alumina as a protective layer when exposed in high temperature oxidizing environments. The presence of these oxide layers provides a protective diffusion barrier which slows down further oxidation. In atmospheres containing water vapor, however, reactions to form volatile hydroxide species occur which remove the surface oxide, thus, lowering the protective capability of the oxide scale. This paper summarizes the current understanding of volatility of chromia, silica and alumina in water vapor containing combustion environments. In addition unanswered questions in each system are discussed. Th current paper represents an update on the considerable information learned in the past five years for these systems.

A Low Salinity Mystery in a Turbidity Current Measured During the Monterey Coordinated Canyon Experiment

NASA Astrophysics Data System (ADS)

Xu, J.; Wang, Z.; Wang, C.; Li, J.; Gwiazda, R.; Paull, C. K.; Maier, K. L.

2016-12-01

Conductivity-Temperature (CT) sensors are one of the most common instruments in oceanographic research that record water conductivity and temperature, two most important parameters of ocean waters from which salinity is computed. When used in super-high turbid water or flows (e.g. turbidity currents or slurries), however, the working principle of CT sensors suggests possibility of bias in conductivity measurements. In this study, a series of lab experiments were conducted to investigate how the presence of high-concentrated sediment particles influences the conductivity readings from an inductive CT sensor. The results provided evidence to challenge a long-held notion that the reduced conductivity often seen inside turbidity currents is an indication of fresh water presence.

Engineering design of a high-temperature superconductor current lead

NASA Astrophysics Data System (ADS)

Niemann, R. C.; Cha, Y. S.; Hull, J. R.; Daugherty, M. A.; Buckles, W. E.

As part of the US Department of Energy's Superconductivity Pilot Center Program, Argonne National Laboratory and Superconductivity, Inc., are developing high-temperature superconductor (HTS) current leads suitable for application to superconducting magnetic energy storage systems. The principal objective of the development program is to design, construct, and evaluate the performance of HTS current leads suitable for near-term applications. Supporting objectives are to (1) develop performance criteria; (2) develop a detailed design; (3) analyze performance; (4) gain manufacturing experience in the areas of materials and components procurement, fabrication and assembly, quality assurance, and cost; (5) measure performance of critical components and the overall assembly; (6) identify design uncertainties and develop a program for their study; and (7) develop application-acceptance criteria.

Highly reliable high speed 1.1μm-InGaAs/GaAsP-VCSELs

NASA Astrophysics Data System (ADS)

Hatakeyama, H.; Anan, T.; Akagawa, T.; Fukatsu, K.; Suzuki, N.; Tokutome, K.; Tsuji, M.

2009-02-01

In this paper, we describe high temperature operation of high speed 1.1μm-range oxide-confined vertical-cavity surfaceemitting lasers (VCSELs) for optical interconnection applications. For achieving high speed of over 25 Gbit/s under a high temperature, we applied InGaAs/GaAsP strain-compensated multiple quantum wells (SC-MQWs) as the active layer. The developed device showed 25 Gbit/s error-free operation at 100°C. We also examined reliability of the VCSELs via accelerated life tests. The result showed extremely long MTTF lifetime of about 10 thousand hours under an ambient temperature of 150°C and a bias current of about 19 kA/cm2, a reliability that either equals or surpasses that of conventional 850-nm VCSELs with 10 Gbit/s. Moreover, we revealed a typical failure mode of the device; the result of analysis indicated that the failure was caused by <110> dark line defects (DLDs) generated in the n-DBR layers under the current aperture area.

Impact of Te and ne on edge current density profiles in ELM mitigated regimes on ASDEX Upgrade

NASA Astrophysics Data System (ADS)

Dunne, M. G.; Rathgeber, S.; Burckhart, A.; Fischer, R.; Giannone, L.; McCarthy, P. J.; Schneider, P. A.; Wolfrum, E.; the ASDEX Upgrade Team

2015-01-01

ELM resolved edge current density profiles are reconstructed using the CLISTE equilibrium code. As input, highly spatially and temporally resolved edge electron temperature and density profiles are used in addition to data from the extensive set of external poloidal field measurements available at ASDEX Upgrade, flux loop difference measurements, and current measurements in the scrape-off layer. Both the local and flux surface averaged current density profiles are analysed for several ELM mitigation regimes. The focus throughout is on the impact of altered temperature and density profiles on the current density. In particular, many ELM mitigation regimes rely on operation at high density. Two reference plasmas with type-I ELMs are analysed, one with a deuterium gas puff and one without, in order to provide a reference for the behaviour in type-II ELMy regimes and high density ELM mitigation with external magnetic perturbations at ASDEX Upgrade. For type-II ELMs it is found that while a similar pedestal top pressure is sustained at the higher density, the temperature gradient decreases in the pedestal. This results in lower local and flux surface averaged current densities in these phases, which reduces the drive for the peeling mode. No significant differences between the current density measured in the type-I phase and ELM mitigated phase is seen when external perturbations are applied, though the pedestal top density was increased. Finally, ELMs during the nitrogen seeded phase of a high performance discharge are analysed and compared to ELMs in the reference phase. An increased pedestal pressure gradient, which is the source of confinement improvement in impurity seeded discharges, causes a local current density increase. However, the increased Zeff in the pedestal acts to reduce the flux surface averaged current density. This dichotomy, which is not observed in other mitigation regimes, could act to stabilize both the ballooning mode and the peeling mode at the same time.

Fabrication and high temperature characteristics of ion-implanted GaAs bipolar transistors and ring-oscillators

NASA Technical Reports Server (NTRS)

Doerbeck, F. H.; Yuan, H. T.; Mclevige, W. V.

1981-01-01

Ion implantation techniques that permit the reproducible fabrication of bipolar GaAs integrated circuits are studied. A 15 stage ring oscillator and discrete transistor were characterized between 25 and 400 C. The current gain of the transistor was found to increase slightly with temperature. The diode leakage currents increase with an activation energy of approximately 1 eV and dominate the transistor leakage current 1 sub CEO above 200 C. Present devices fail catastrophically at about 400 C because of Au-metallization.

Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates.

PubMed

Geum, Dae-Myeong; Kim, SangHyeon; Kang, SooSeok; Kim, Hosung; Park, Hwanyeol; Rho, Il Pyo; Ahn, Seung Yeop; Song, Jindong; Choi, Won Jun; Yoon, Euijoon

2018-03-05

In this paper, InAs 0.81 Sb 0.19 -based hetero-junction photovoltaic detector (HJPD) with an In 0.2 Al 0.8 Sb barrier layer was grown on GaAs substrates. By using technology computer aided design (TCAD), a design of a barrier layer that can achieve nearly zero valance band offsets was accomplished. A high quality InAs 0.81 Sb 0.19 epitaxial layer was obtained with relatively low threading dislocation density (TDD), calculated from a high-resolution X-ray diffraction (XRD) measurement. This layer showed a Hall mobility of 15,000 cm 2 /V⋅s, which is the highest mobility among InAsSb layers with an Sb composition of around 20% grown on GaAs substrates. Temperature dependence of dark current, photocurrent response and responsivity were measured and analyzed for fabricated HJPD. HJPD showed the clear photocurrent response having a long cutoff wavelength of 5.35 μm at room temperature. It was observed that the dark current of HJPDs is dominated by the diffusion limited current at temperatures ranging from 200K to room temperature from the dark current analysis. Peak responsivity of HJPDs exhibited the 1.18 A/W and 15 mA/W for 83K and a room temperature under zero bias condition even without anti-reflection coating (ARC). From these results, we believe that HJPDs could be an appropriate PD device for future compact and low power dissipation mid-infrared on-chip sensors and imaging devices.

Enhanced critical current density in the pressure-induced magnetic state of the high-temperature superconductor FeSe

PubMed Central

Jung, Soon-Gil; Kang, Ji-Hoon; Park, Eunsung; Lee, Sangyun; Lin, Jiunn-Yuan; Chareev, Dmitriy A.; Vasiliev, Alexander N.; Park, Tuson

2015-01-01

We investigate the relation of the critical current density (Jc) and the remarkably increased superconducting transition temperature (Tc) for the FeSe single crystals under pressures up to 2.43 GPa, where the Tc is increased by ~8 K/GPa. The critical current density corresponding to the free flux flow is monotonically enhanced by pressure which is due to the increase in Tc, whereas the depinning critical current density at which the vortex starts to move is more influenced by the pressure-induced magnetic state compared to the increase of Tc. Unlike other high-Tc superconductors, FeSe is not magnetic, but superconducting at ambient pressure. Above a critical pressure where magnetic state is induced and coexists with superconductivity, the depinning Jc abruptly increases even though the increase of the zero-resistivity Tc is negligible, directly indicating that the flux pinning property compared to the Tc enhancement is a more crucial factor for an achievement of a large Jc. In addition, the sharp increase in Jc in the coexisting superconducting phase of FeSe demonstrates that vortices can be effectively trapped by the competing antiferromagnetic order, even though its antagonistic nature against superconductivity is well documented. These results provide new guidance toward technological applications of high-temperature superconductors. PMID:26548444

Thermal characterizations of a large-format lithium ion cell focused on high current discharges

NASA Astrophysics Data System (ADS)

Veth, C.; Dragicevic, D.; Merten, C.

2014-12-01

The thermal behavior of a large-format lithium ion cell has been investigated during measurements on cell and battery level. High current discharges up to 300 A are the main topic of this study. This paper demonstrates that the temperature response to high current loads provides the possibility to investigate internal cell parameters and their inhomogeneity. In order to identify thermal response caused by internal cell processes, the heat input due to contact resistances has been minimized. The differences between the thermal footprint of a cell during cell and battery measurements are being addressed. The study presented here focuses on the investigation of thermal hot and cold spots as well as temperature gradients in a 50 Ah pouch cell. Furthermore, it is demonstrated that the difference between charge and discharge can have significant influence on the thermal behavior of lithium ion cells. Moreover, the miscellaneous thermal characteristics of differently aged lithium ion cells highlight the possibility of an ex-situ non-destructive post-mortem-analysis, providing the possibility of a qualitative and quantitative characterization of inhomogeneous cell-aging. These investigations also generate excellent data for the validation and parameterization of electro-thermal cell models, predicting the distribution of temperature, current, potential, SOC and SOH inside large-format cells.

Facing a changing world: Thermal physiology of American pikas (Ochotona princeps)

USGS Publications Warehouse

Otto, Hans W; Wilson, James A; Beever, Erik

2015-01-01

American pikas (Ochotona princeps) are of concern with respect to warming montane temperatures; however, little information exists regarding their physiological ability to adapt to warming temperatures. Previous studies have shown that pikas have high metabolism and low thermal conductance, which allow survival during cold winters. It has been hypothesized that these characteristics may be detrimental, given the recent warming trends observed in montane ecosystems. We examined resting metabolic rate, surface activity, and den and ambient temperatures (Ta) of pikas in late summer (August 2011 and 2012) at 2 locations in the Rocky Mountains. Resting metabolic rate was calculated to be 2.02 mL O2 · g-1h-1, with a lower critical temperature (LCT) of 28.1 ± 0.2 °C. No upper critical temperature (UCT) could be determined from our data; therefore, the estimated thermoneutral zone (TNZ) was 28.1 °C to at least 35.0 °C (upper experimental temperature). Pikas in this study showed the same bimodal above-talus activity patterns reported in previous studies. Den temperatures in Colorado were correlated with, but consistently lower than, current ambient temperatures. Wyoming den temperatures showed a weak correlation with Ta 20 min prior to the current den temperature. This study is one of few to present data on the physiological response pikas may have to current warming conditions, and the first to perform metabolic measurements in situ. Our data support conclusions of previous studies, specifically MacArthur and Wang (1973, 1974) and Smith (1974), which indicated American pikas may not have the physiological ability to cope with high Ta. Our results also highlight the importance of shaded regions below the talus rocks for behavioral thermoregulation by pikas.

Understanding the multiferroicity in TmMn2O5 by a magnetically induced ferrielectric model

PubMed Central

Yang, L.; Li, X.; Liu, M. F.; Li, P. L.; Yan, Z. B.; Zeng, M.; Qin, M. H.; Gao, X. S.; Liu, J.-M.

2016-01-01

The magnetically induced electric polarization behaviors in multiferroic TmMn2O5 in response to varying temperature and magnetic field are carefully investigated by means of a series of characterizations including the high precision pyroelectric current technique. Here polycrystalline rather than single crystal samples are used for avoiding the strong electrically self-polarized effect in single crystals, and various parallel experiments on excluding the thermally excited current contributions are performed. The temperature-dependent electric polarization flop as a major character is identified for different measuring paths. The magneto-current measurements indicate that the electric polarization in the low temperature magnetic phase region has different origin from that in the high temperature magnetic phase. It is suggested that the electric polarization does have multiple components which align along different orientations, including the Mn3+-Mn4+-Mn3+ exchange striction induced polarization PMM, the Tm3+-Mn4+-Tm3+ exchange striction induced polarization PTM, and the low temperature polarization PLT probably associated with the Tm3+ commensurate phase. The observed electric polarization flop can be reasonably explained by the ferrielectric model proposed earlier for DyMn2O5, where PMM and PTM are the two antiparallel components both along the b-axis and PLT may align along the a-axis. Finally, several issues on the unusual temperature dependence of ferroelectric polarizations are discussed. PMID:27713482

High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Norman, Justin; Kennedy, M. J.; Shang, Chen; Shin, Bongki; Wan, Yating; Gossard, Arthur C.; Bowers, John E.

2017-09-01

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

Evaluation of 10V Chip Polymer Tantalum Capacitors for Space Applications

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander A.

2016-01-01

Due to low ESR and safe failure mode, new technology chip polymer tantalum capacitors (CPTC) have gained popularity in the electronics design community, first in commercial applications, and now in hi-rel and space systems. The major drawbacks of these parts are high leakage currents, degradation under environmental stresses, and a relatively narrow temperature range of operating and storage conditions. Several studies have shown that a certain amount of moisture in polymer cathodes is necessary for a normal operation of the parts. This might limit applications of CPTCs in space systems and requires analysis of long-term exposure to deep vacuum conditions on their performance and reliability. High leakage currents and limited maximum operational temperature complicate accelerated testing that is necessary to assess long-term reliability and require new screening and qualification procedures for quality assurance. A better understanding of behavior of CPTCs as compared to traditional, MnO2, capacitors is necessary to develop adequate approaches for QA system for space applications. A specific of CPTCs is that different materials and processes might be used for low-voltage (10 V and less) and high-voltage (above 10 V) capacitors, so performance and degradation processes in these groups require separate analysis. In this work, that is a part of the NASA Electronic Parts and Packaging (NEPP) program, degradation of AC and DC characteristics under environmental stresses at different temperatures and voltages have been studied in nine lots of commercial and automotive grade capacitors rated to 10 V. Results of analysis of leakage currents, high temperature storage (HTS) up to 5000 hrs in vacuum and air at different temperatures, and Highly Accelerated Life Testing (HALT) in the range from 85 C to 145 C are presented. Temperature and voltage acceleration factors were calculated based on approximation of distributions of degradation rates with a general log-linear Weibull model. Mechanisms of degradation and failures, and requirements for screening and qualification testing are discussed.

RF current profile control studies in the alcator C-mod tokamak

NASA Astrophysics Data System (ADS)

Bonoli, P. T.; Porkolab, M.; Wukitch, S. J.; Bernabei, S.; Kaita, R.; Mikkelsen, D.; Phillips, C. K.; Schilling, G.

1999-09-01

Time dependent calculations of lower hybrid (LH) current profile control in Alcator C-Mod have been done using the TRANSP [1], FPPRF [2], and LSC [3] codes. Up to 3 MW of LH current drive power was applied in plasmas with high power ICRF minority heating (PICH=1.8-3 MW) and fast current ramp up. Using the experimentally measured temperature profiles, off-axis current generation resulted in nonmonotonic q-profiles with qmin~=1.6. Self-consistent effects of off-axis electron heating by the LH power were also included in the analysis and significant broadening of the electron temperature profile was found with qmin>~2 and a larger shear reversal radius.

Acoustic levitation for high temperature containerless processing in space

NASA Technical Reports Server (NTRS)

Rey, C. A.; Sisler, R.; Merkley, D. R.; Danley, T. J.

1990-01-01

New facilities for high-temperature containerless processing in space are described, including the acoustic levitation furnace (ALF), the high-temperature acoustic levitator (HAL), and the high-pressure acoustic levitator (HPAL). In the current ALF development, the maximum temperature capabilities of the levitation furnaces are 1750 C, and in the HAL development with a cold wall furnace they will exceed 2000-2500 C. The HPAL demonstrated feasibility of precursor space flight experiments on the ground in a 1 g pressurized-gas environment. Testing of lower density materials up to 1300 C has also been accomplished. It is suggested that advances in acoustic levitation techniques will result in the production of new materials such as ceramics, alloys, and optical and electronic materials.

Electromigration and morphological changes in Ag nanostructures

NASA Astrophysics Data System (ADS)

Chatterjee, A.; Bai, T.; Edler, F.; Tegenkamp, C.; Weide-Zaage, K.; Pfnür, H.

2018-02-01

Electromigration (EM) as a structuring tool was investigated in Ag nanowires (width 300 nm, thickness 25 nm) and partly in notched and bow-tie Ag structures on a Si(1 0 0) substrate in ultra-high vacuum using a four-tip scanning tunneling microscope in combination with a scanning electron microscope. From simulations of Ag nanowires we got estimates of temperature profiles, current density profiles, EM and thermal migration (TM) mass flux distributions within the nanowire induced by critical current densities of 108 A cm-2. At room temperature, the electron wind force at these current densities by far dominates over thermal diffusion, and is responsible for formation of voids at the cathode and hillocks at the anode side. For current densities that exceed the critical current densities necessary for EM, a new type of wire-like structure formation was found both at room temperature and at 100 K for notched and bow-tie structures. This suggests that the simultaneous action of EM and TM is structure forming, but with a very small influence of TM at low temperature.

High resolution temperature mapping of gas turbine combustor simulator exhaust with femtosecond laser induced fiber Bragg gratings

NASA Astrophysics Data System (ADS)

Walker, Robert B.; Yun, Sangsig; Ding, Huimin; Charbonneau, Michel; Coulas, David; Lu, Ping; Mihailov, Stephen J.; Ramachandran, Nanthan

2017-04-01

Femtosecond infrared (fs-IR) laser written fiber Bragg gratings (FBGs), have demonstrated great potential for extreme sensing. Such conditions are inherent in advanced gas turbine engines under development to reduce greenhouse gas emissions; and the ability to measure temperature gradients in these harsh environments is currently limited by the lack of sensors and controls capable of withstanding the high temperature, pressure and corrosive conditions present. This paper discusses fabrication and deployment of several fs-IR written FBG arrays, for monitoring exhaust temperature gradients of a gas turbine combustor simulator. Results include: contour plots of measured temperature gradients, contrast with thermocouple data.

Temperature dependence of frequency response characteristics in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Lu, Xubing; Minari, Takeo; Liu, Chuan; Kumatani, Akichika; Liu, J.-M.; Tsukagoshi, Kazuhito

2012-04-01

The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characteristics in pentacene-based organic field-effect transistors and metal-insulator-semiconductor capacitors. As the temperature decreased, the capacitance-voltage characteristics showed large frequency dispersion and a negative shift in the flat-band voltage at high frequencies. The cutoff frequency shows Arrhenius-type temperature dependence with different activation energy values for various gate voltages. These phenomena demonstrate the effects of charge trapping on the frequency response characteristics, since decreased mobility prevents a fast charge response for alternating current signals at low temperatures.

High-temperature change of the creep rate in YBa2Cu3O7-δ films with different pinning landscapes

NASA Astrophysics Data System (ADS)

Haberkorn, N.; Miura, M.; Baca, J.; Maiorov, B.; Usov, I.; Dowden, P.; Foltyn, S. R.; Holesinger, T. G.; Willis, J. O.; Marken, K. R.; Izumi, T.; Shiohara, Y.; Civale, L.

2012-05-01

Magnetic relaxation measurements in YBa2Cu3O7-δ (YBCO) films at intermediate and high temperatures show that the collective vortex creep based on the elastic motion of the vortex lattice has a crossover to fast creep that significantly reduces the superconducting critical current density (Jc). This crossover occurs at temperatures much lower than the irreversibility field line. We study the influence of different kinds of crystalline defects, such as nanorods, twin boundaries, and nanoparticles, on the high-temperature vortex phase diagram of YBCO films. We found that the magnetization relaxation data is a fundamental tool to understand the pinning at high temperatures. The results indicate that high Jc values are directly associated with small creep rates. Based on the analysis of the depinning temperature in films with columnar defects, our results indicate that the size of the defects is the relevant parameter that determines thermal depinning at high temperatures. Also, the extension of the collective creep regime depends on the density of the pinning centers.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Non-inductive current drive and transport in high βN plasmas in JET

NASA Astrophysics Data System (ADS)

Voitsekhovitch, I.; Alper, B.; Brix, M.; Budny, R. V.; Buratti, P.; Challis, C. D.; Ferron, J.; Giroud, C.; Joffrin, E.; Laborde, L.; Luce, T. C.; McCune, D.; Menard, J.; Murakami, M.; Park, J. M.; JET-EFDA contributors

2009-05-01

A route to stationary MHD stable operation at high βN has been explored at the Joint European Torus (JET) by optimizing the current ramp-up, heating start time and the waveform of neutral beam injection (NBI) power. In these scenarios the current ramp-up has been accompanied by plasma pre-heat (or the NBI has been started before the current flat-top) and NBI power up to 22 MW has been applied during the current flat-top. In the discharges considered transient total βN ≈ 3.3 and stationary (during high power phase) βN ≈ 3 have been achieved by applying the feedback control of βN with the NBI power in configurations with monotonic or flat core safety factor profile and without an internal transport barrier (ITB). The transport and current drive in this scenario is analysed here by using the TRANSP and ASTRA codes. The interpretative analysis performed with TRANSP shows that 50-70% of current is driven non-inductively; half of this current is due to the bootstrap current which has a broad profile since an ITB was deliberately avoided. The GLF23 transport model predicts the temperature profiles within a ±22% discrepancy with the measurements over the explored parameter space. Predictive simulations with this model show that the E × B rotational shear plays an important role for thermal ion transport in this scenario, producing up to a 40% increase of the ion temperature. By applying transport and current drive models validated in self-consistent simulations of given reference scenarios in a wider parameter space, the requirements for fully non-inductive stationary operation at JET are estimated. It is shown that the strong stiffness of the temperature profiles predicted by the GLF23 model restricts the bootstrap current at larger heating power. In this situation full non-inductive operation without an ITB can be rather expensive strongly relying on the external non-inductive current drive sources.

A Database for Comparative Electrochemical Performance of Commercial 18650-Format Lithium-Ion Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barkholtz, Heather M.; Fresquez, Armando; Chalamala, Babu R.

Lithium-ion batteries are a central technology to our daily lives with widespread use in mobile devices and electric vehicles. These batteries are also beginning to be widely used in electric grid infrastructure support applications which have stringent safety and reliability requirements. Typically, electrochemical performance data is not available for modelers to validate their simulations, mechanisms, and algorithms for lithium-ion battery performance and lifetime. In this paper, we report on the electrochemical performance of commercial 18650 cells at a variety of temperatures and discharge currents. We found that LiFePO 4 is temperature tolerant for discharge currents at or below 10 Amore » whereas LiCoO 2, LiNi xCo yAl 1-x-yO 2, and LiNi 0.80Mn 0.15Co 0.05O 2 exhibited optimal electrochemical performance when the temperature is maintained at 15°C. LiNi xCo yAl 1-x-yO 2 showed signs of lithium plating at lower temperatures, evidenced by irreversible capacity loss and emergence of a high-voltage differential capacity peak. Furthermore, all cells need to be monitored for self-heating, as environment temperature and high discharge currents may elicit an unintended abuse condition. Overall, this study shows that lithium-ion batteries are highly application-specific and electrochemical behavior must be well understood for safe and reliable operation. Additionally, data collected in this study is available for anyone to download for further analysis and model validation.« less

A Database for Comparative Electrochemical Performance of Commercial 18650-Format Lithium-Ion Cells

DOE PAGES

Barkholtz, Heather M.; Fresquez, Armando; Chalamala, Babu R.; ...

2017-09-08

Lithium-ion batteries are a central technology to our daily lives with widespread use in mobile devices and electric vehicles. These batteries are also beginning to be widely used in electric grid infrastructure support applications which have stringent safety and reliability requirements. Typically, electrochemical performance data is not available for modelers to validate their simulations, mechanisms, and algorithms for lithium-ion battery performance and lifetime. In this paper, we report on the electrochemical performance of commercial 18650 cells at a variety of temperatures and discharge currents. We found that LiFePO 4 is temperature tolerant for discharge currents at or below 10 Amore » whereas LiCoO 2, LiNi xCo yAl 1-x-yO 2, and LiNi 0.80Mn 0.15Co 0.05O 2 exhibited optimal electrochemical performance when the temperature is maintained at 15°C. LiNi xCo yAl 1-x-yO 2 showed signs of lithium plating at lower temperatures, evidenced by irreversible capacity loss and emergence of a high-voltage differential capacity peak. Furthermore, all cells need to be monitored for self-heating, as environment temperature and high discharge currents may elicit an unintended abuse condition. Overall, this study shows that lithium-ion batteries are highly application-specific and electrochemical behavior must be well understood for safe and reliable operation. Additionally, data collected in this study is available for anyone to download for further analysis and model validation.« less

High beta plasma operation in a toroidal plasma producing device

DOEpatents

Clarke, John F.

1978-01-01

A high beta plasma is produced in a plasma producing device of toroidal configuration by ohmic heating and auxiliary heating. The plasma pressure is continuously monitored and used in a control system to program the current in the poloidal field windings. Throughout the heating process, magnetic flux is conserved inside the plasma and the distortion of the flux surfaces drives a current in the plasma. As a consequence, the total current increases and the poloidal field windings are driven with an equal and opposing increasing current. The spatial distribution of the current in the poloidal field windings is determined by the plasma pressure. Plasma equilibrium is maintained thereby, and high temperature, high beta operation results.

Low-noise current amplifier based on mesoscopic Josephson junction.

PubMed

Delahaye, J; Hassel, J; Lindell, R; Sillanpää, M; Paalanen, M; Seppä, H; Hakonen, P

2003-02-14

We used the band structure of a mesoscopic Josephson junction to construct low-noise amplifiers. By taking advantage of the quantum dynamics of a Josephson junction, i.e., the interplay of interlevel transitions and the Coulomb blockade of Cooper pairs, we created transistor-like devices, Bloch oscillating transistors, with considerable current gain and high-input impedance. In these transistors, the correlated supercurrent of Cooper pairs is controlled by a small base current made up of single electrons. Our devices reached current and power gains on the order of 30 and 5, respectively. The noise temperature was estimated to be around 1 kelvin, but noise temperatures of less than 0.1 kelvin can be realistically achieved. These devices provide quantum-electronic building blocks that will be useful at low temperatures in low-noise circuit applications with an intermediate impedance level.

Characterization of photocathode dark current vs. temperature in image intensifier tube modules and intensified televisions

NASA Astrophysics Data System (ADS)

Bender, Edward J.; Wood, Michael V.; Hart, Steve; Heim, Gerald B.; Torgerson, John A.

2004-10-01

Image intensifiers (I2) have gained wide acceptance throughout the Army as the premier nighttime mobility sensor for the individual soldier, with over 200,000 fielded systems. There is increasing need, however, for such a sensor with a video output, so that it can be utilized in remote vehicle platforms, and/or can be electronically fused with other sensors. The image-intensified television (I2TV), typically consisting of an image intensifier tube coupled via fiber optic to a solid-state imaging array, has been the primary solution to this need. I2TV platforms in vehicles, however, can generate high internal heat loads and must operate in high-temperature environments. Intensifier tube dark current, called "Equivalent Background Input" or "EBI", is not a significant factor at room temperature, but can seriously degrade image contrast and intra-scene dynamic range at such high temperatures. Cooling of the intensifier's photocathode is the only practical solution to this problem. The US Army RDECOM CERDEC Night Vision & Electronic Sensors Directorate (NVESD) and Ball Aerospace have collaborated in the reported effort to more rigorously characterize intensifier EBI versus temperature. NVESD performed non-imaging EBI measurements of Generation 2 and 3 tube modules over a large range of ambient temperature, while Ball performed an imaging evaluation of Generation 3 I2TVs over a similar temperature range. The findings and conclusions of this effort are presented.

Current-carrying element based on second-generation high-temperature superconductor for the magnet system of a fusion neutron source

NASA Astrophysics Data System (ADS)

Novikov, M. S.; Ivanov, D. P.; Novikov, S. I.; Shuvaev, S. A.

2015-12-01

Application of current-carrying elements (CCEs) made of second-generation high-temperature superconductor (2G HTS) in magnet systems of a fusion neutron source (FNS) and other fusion devices will allow their magnetic field and thermodynamic stability to be increased substantially in comparison with those of low-temperature superconductor (LTS) magnets. For a toroidal magnet of the FNS, a design of a helical (partially transposed) CCE made of 2G HTS is under development with forced-flow cooling by helium gas, a current of 20-30 kA, an operating temperature of 10-20 K, and a magnetic field on the winding of 12-15 T (prospectively ~20 T). Short-sized samples of the helical flexible heavy-current CCE are being fabricated and investigated; a pilot-line unit for production of long-sized CCE pieces is under construction. The applied fabrication technique allows the CCE to be produced which combines a high operating current, thermal and mechanical stability, manufacturability, and low losses in the alternating modes. The possibility of fabricating the CCE with the outer dimensions and values of the operating parameter required for the FNS (and with a significant margin) using already available serial 2G HTS tapes is substantiated. The maximum field of toroidal magnets with CCEs made of 2G HTS will be limited only by mechanical properties of the magnet's casing and structure, while the thermal stability will be approximately two orders of magnitude higher than that of toroidal magnets with LTS-based CCEs. The helical CCE made of 2G HTS is very promising for fusion and hybrid electric power plants, and its design and technologies of production, as well as the prototype coils made of it for the FNS and other tokamaks, are worth developing now.

Some considerations for various positioning systems and their science capabilities

NASA Technical Reports Server (NTRS)

Rey, Charles A.; Merkley, D. R.; Danley, T. J.

1990-01-01

Containerless processing of materials at elevated temperatures is discussed with emphasis on high temperature chemistry, thermophysical properties, materials science, and materials processing. Acoustic and electromagnetic positioning of high temperature melts are discussed. Results from recent ground based experiments, including KC-135 testing of an acoustic levitator, are presented. Some current positioning technologies and the potential for enhancing them are considered. Further, a summary of these technologies and their science capabilities for the development of future experiments is given.

Magnetohydrodynamic generator electrode

DOEpatents

Marchant, David D.; Killpatrick, Don H.; Herman, Harold; Kuczen, Kenneth D.

1979-01-01

An improved electrode for use as a current collector in the channel of a magnetohydrodynamid (MHD) generator utilizes an elongated monolithic cap of dense refractory material compliantly mounted to the MHD channel frame for collecting the current. The cap has a central longitudinal channel which contains a first layer of porous refractory ceramic as a high-temperature current leadout from the cap and a second layer of resilient wire mesh in contact with the first layer as a low-temperature current leadout between the first layer and the frame. Also described is a monolithic ceramic insulator compliantly mounted to the frame parallel to the electrode by a plurality of flexible metal strips.

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jun Hyuk; Lee, Jong Won; Kim, Dong Yeong

The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaInP red light-emitting diodes (LEDs), a 450 nm GaInN blue LED, and a 285 nm AlGaN deep-ultraviolet (DUV) LED. We observed distinct differences in the variation of the EQE with temperature and current density for the three types of LEDs. Whereas the EQE of the AlGaInP red LED increases as temperature decreases below room temperature, the EQEs of GaInN blue and AlGaN DUV LEDs decrease for the same change in temperature in a low-current density regime. The free carrier concentration, as determined from the dopant ionization energy, shows a strong material-system-specificmore » dependence, leading to different degrees of asymmetry in carrier concentration for the three types of LEDs. We attribute the EQE variation of the red, blue, and DUV LEDs to the different degrees of asymmetry in carrier concentration, which can be exacerbated at cryogenic temperatures. As for the EQE variation with temperature in a high-current density regime, the efficiency droop for the AlGaInP red and GaInN blue LEDs becomes more apparent as temperature decreases, due to the deterioration of the asymmetry in carrier concentration. However, the EQE of the AlGaN DUV LED initially decreases, then reaches an EQE minimum point, and then increases again due to the field-ionization of acceptors by the Poole-Frenkel effect. The results elucidate that carrier transport phenomena allow for the understanding of the droop phenomenon across different material systems, temperatures, and current densities.« less

Streamflow and nutrient dependence of temperature effects on dissolved oxygen in low-order forest streams

Treesearch

April Mason; Y. Jun Xu; Philip Saksa; Adrienne Viosca; Johnny M. Grace; John Beebe; Richard Stich

2007-01-01

Low dissolved oxygen (DO) concentrations in streams can be linked to both natural conditions and human activities. In Louisiana, natural stream conditions such as low flow, high temperature and high organic content, often result in DO levels already below current water quality criteria, making it difficult to develop standards for Best Management Practices (BMPs)....

Optimization of temperature field of tobacco heat shrink machine

NASA Astrophysics Data System (ADS)

Yang, Xudong; Yang, Hai; Sun, Dong; Xu, Mingyang

2018-06-01

A company currently shrinking machine in the course of the film shrinkage is not compact, uneven temperature, resulting in poor quality of the shrinkage of the surface film. To solve this problem, the simulation and optimization of the temperature field are performed by using the k-epsilon turbulence model and the MRF model in fluent. The simulation results show that after the mesh screen structure is installed at the suction inlet of the centrifugal fan, the suction resistance of the fan can be increased and the eddy current intensity caused by the high-speed rotation of the fan can be improved, so that the internal temperature continuity of the heat shrinkable machine is Stronger.

Continuum model of tensile fracture of metal melts and its application to a problem of high-current electron irradiation of metals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mayer, Alexander E., E-mail: mayer@csu.ru, E-mail: mayer.al.evg@gmail.com; Mayer, Polina N.

2015-07-21

A continuum model of the metal melt fracture is formulated on the basis of the continuum mechanics and theory of metastable liquid. A character of temperature and strain rate dependences of the tensile strength that is predicted by the continuum model is verified, and parameters of the model are fitted with the use of the results of the molecular dynamics simulations for ultra-high strain rates (≥1–10/ns). A comparison with experimental data from literature is also presented for Al and Ni melts. Using the continuum model, the dynamic tensile strength of initially uniform melts of Al, Cu, Ni, Fe, Ti, andmore » Pb within a wide range of strain rates (from 1–10/ms to 100/ns) and temperatures (from melting temperature up to 70–80% of critical temperature) is calculated. The model is applied to numerical investigation of a problem of the high-current electron irradiation of Al, Cu, and Fe targets.« less

High-conductance low-voltage organic thin film transistor with locally rearranged poly(3-hexylthiophene) domain by current annealing on plastic substrate

NASA Astrophysics Data System (ADS)

Pei, Zingway; Tsai, Hsing-Wang; Lai, Hsin-Cheng

2016-02-01

The organic material based thin film transistors (TFTs) are attractive for flexible optoelectronics applications due to the ability of lager area fabrication by solution and low temperature process on plastic substrate. Recently, the research of organic TFT focus on low operation voltage and high output current to achieve a low power organic logic circuit for optoelectronic device,such as e-paper or OLED displayer. To obtain low voltage and high output current, high gate capacitance and high channel mobility are key factors. The well-arranged polymer chain by a high temperature postannealing, leading enhancement conductivity of polymer film was a general method. However, the thermal annealing applying heat for all device on the substrate and may not applicable to plastic substrate. Therefore, in this work, the low operation voltage and high output current of polymer TFTs was demonstrated by locally electrical bias annealing. The poly(styrene-comethyl methacrylate) (PS-r-PMMA) with ultra-thin thickness is used as gate dielectric that the thickness is controlled by thermal treatment after spin coated on organic electrode. In electrical bias-annealing process, the PS-r- PMMA is acted a heating layer. After electrical bias-annealing, the polymer TFTs obtain high channel mobility at low voltage that lead high output current by a locally annealing of P3HT film. In the future, the locally electrical biasannealing method could be applied on plastic substrate for flexible optoelectronic application.

A multi-core fiber based interferometer for high temperature sensing

NASA Astrophysics Data System (ADS)

Zhou, Song; Huang, Bo; Shu, Xuewen

2017-04-01

In this paper, we have verified and implemented a Mach-Zehnder interferometer based on seven-core fiber for high temperature sensing application. This proposed structure is based on a multi-mode-multi-core-multi-mode fiber structure sandwiched by a single mode fiber. Between the single-mode and multi-core fiber, a 3 mm long multi-mode fiber is formed for lead-in and lead-out light. The basic operation principle of this device is the use of multi-core modes, single-mode and multi-mode interference coupling is also utilized. Experimental results indicate that this interferometer sensor is capable of accurate measurements of temperatures up to 800 °C, and the temperature sensitivity of the proposed sensor is as high as 170.2 pm/°C, which is much higher than the current existing MZI based temperature sensors (109 pm/°C). This type of sensor is promising for practical high temperature applications due to its advantages including high sensitivity, simple fabrication process, low cost and compactness.

Development of Thin Film Ceramic Thermocouples for High Temperature Environments

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Fralick, Gustave C.; Farmer, Serene C.; Sayir, Ali; Blaha, Charles A.; Gonzalez, Jose M.

2004-01-01

The maximum use temperature of noble metal thin film thermocouples of 1100 C (2000 F) may not be adequate for use on components in the increasingly harsh conditions of advanced aircraft and next generation launch technology. Ceramic-based thermocouples are known for their high stability and robustness at temperatures exceeding 1500 C, but are typically found in the form of rods or probes. NASA Glenn Research Center is investigating the feasibility of ceramics as thin film thermocouples for extremely high temperature applications to take advantage of the stability and robustness of ceramics and the non-intrusiveness of thin films. This paper will discuss the current state of development in this effort.

Vortex pinning properties in Fe-chalcogenides

NASA Astrophysics Data System (ADS)

Leo, A.; Grimaldi, G.; Guarino, A.; Avitabile, F.; Nigro, A.; Galluzzi, A.; Mancusi, D.; Polichetti, M.; Pace, S.; Buchkov, K.; Nazarova, E.; Kawale, S.; Bellingeri, E.; Ferdeghini, C.

2015-12-01

Among the families of iron-based superconductors, the 11-family is one of the most attractive for high field applications at low temperatures. Optimization of the fabrication processes for bulk, crystalline and/or thin film samples is the first step in producing wires and/or tapes for practical high power conductors. Here we present the results of a comparative study of pinning properties in iron-chalcogenides, investigating the flux pinning mechanisms in optimized Fe(Se{}1-xTe x ) and FeSe samples by current-voltage characterization, magneto-resistance and magnetization measurements. In particular, from Arrhenius plots in magnetic fields up to 9 T, the activation energy is derived as a function of the magnetic field, {U}0(H), whereas the activation energy as a function of temperature, U(T), is derived from relaxation magnetization curves. The high pinning energies, high upper critical field versus temperature slopes near critical temperatures, and highly isotropic pinning properties make iron-chalcogenide superconductors a technological material which could be a real competitor to cuprate high temperature superconductors for high field applications.

A new method of efficient heat transfer and storage at very high temperatures

NASA Technical Reports Server (NTRS)

Shaw, D.; Bruckner, A. P.; Hertzberg, A.

1980-01-01

A unique, high temperature (1000-2000 K) continuously operating capacitive heat exchanger system is described. The system transfers heat from a combustion or solar furnace to a working gas by means of a circulating high temperature molten refractory. A uniform aggregate of beads of a glass-like refractory is injected into the furnace volume. The aggregate is melted and piped to a heat exchanger where it is sprayed through a counter-flowing, high pressure working gas. The refractory droplets transfer their heat to the gas, undergoing a phase change into the solid bead state. The resulting high temperature gas is used to drive a suitable high efficiency heat engine. The solidified refractory beads are delivered back to the furnace and melted to continue the cycle. This approach avoids the important temperature limitations of conventional tube-type heat exchangers, giving rise to the potential of converting heat energy into useful work at considerably higher efficiencies than currently attainable and of storing energy at high thermodynamic potential.

Effect of Impedance Relaxation in Conductance Mechanisms in TiO2/ITO/ZnO:Al/p-Si Heterostructure

NASA Astrophysics Data System (ADS)

Nouiri, M.; El Mir, L.

2018-03-01

The electrical conduction of a TiO2/ITO/ZnO:Al/p-Si structure under alternating-current excitation was investigated in the temperature range of 80 K to 300 K. The frequency dependence of the capacitance and conductance revealed the response of a thermally activated trap characterized by activation energy of about 140 meV. The frequency dependence of the conductance obeyed the universal dynamic response according to the common relation G = Aωs . The temperature dependence of the frequency exponent s illustrates that, in the low frequency range, conduction is governed by the correlated barrier hopping (CBH) mechanism involving two distinct energy levels for all investigated temperatures. For the high frequency region, conduction takes place according to the overlapping large-polaron tunneling mechanism at low temperatures but the CBH mechanism becomes dominant in the high temperature region. This difference in electrical behavior between low and high temperatures can be attributed to the dominance of dielectric relaxation at low compared with high temperatures.

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

NASA Technical Reports Server (NTRS)

Soderstrom, J. R.; Brown, E. R.; Parker, C. D.; Mahoney, L. J.; Yao, J. Y.

1991-01-01

InAs/AlSb double-barrier resonant tunneling diodes with peak current densities up to 370,000 A/sq cm and high peak-to-valley current ratios of 3.2 at room temperature have been fabricated. The peak current density is well-explained by a stationary-state transport model with the two-band envelope function approximation. The valley current density predicted by this model is less than the experimental value by a factor that is typical of the discrepancy found in other double-barrier structures. It is concluded that threading dislocations are largely inactive in the resonant tunneling process.

The potential for CMCs to replace superalloys in engine exhaust ducts

NASA Astrophysics Data System (ADS)

Roth, Richard; Clark, Joel P.; Field, Frank R.

1994-01-01

The Materials Systems Laboratory at the Massachusetts Institute of Technology has conducted research to develop decision tools that can facilitate materials selection and provide a deeper understanding of the design tradeoffs that occur when choosing among advanced aerospace materials for high-temperature applications. As an illustration of the use of these tools, this paper describes research done to evaluate the material alternatives currently under consideration for exhaust ducts in aircraft gas turbine engines. Although nickel-based superalloys currently prevail for this application, the increasing temperatures of modern engines are necessitating the usage of higher temperature materials.

Potential High-Temperature Shape-Memory Alloys Identified in the Ti(Ni,Pt) System

NASA Technical Reports Server (NTRS)

Noebe, Ronald D.; Biles, Tiffany A.; Garg, Anita; Nathal, Michael V.

2004-01-01

"Shape memory" is a unique property of certain alloys that, when deformed (within certain strain limits) at low temperatures, will remember and recover to their original predeformed shape upon heating. It occurs when an alloy is deformed in the low-temperature martensitic phase and is then heated above its transformation temperature back to an austenitic state. As the material passes through this solid-state phase transformation on heating, it also recovers its original shape. This behavior is widely exploited, near room temperature, in commercially available NiTi alloys for connectors, couplings, valves, actuators, stents, and other medical and dental devices. In addition, there are limitless applications in the aerospace, automotive, chemical processing, and many other industries for materials that exhibit this type of shape-memory behavior at higher temperatures. But for high temperatures, there are currently no commercial shape-memory alloys. Although there are significant challenges to the development of high-temperature shape-memory alloys, at the NASA Glenn Research Center we have identified a series of alloy compositions in the Ti-Ni-Pt system that show great promise as potential high-temperature shape-memory materials.

Experimental Investigations, Modeling, and Analyses of High-Temperature Devices for Space Applications. Part 2

DTIC Science & Technology

1999-01-01

AMTEC cell during operation is essential to maximize the thermal -to- electric conversion efficiency of the device. The cell efficiency , rQ, is defined...the cell current is relatively high (usually above 2 A), and we found that the former thermal model of the conical evaporator wick underpredicted... high temperature, sodium vapor environment in a typical multi-tube AMTEC cell , where thermal radiation exchange is significant, an

High temperature semiconductor diode laser pumps for high energy laser applications

NASA Astrophysics Data System (ADS)

Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

2018-02-01

Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

Rotating disk electrode system for elevated pressures and temperatures.

PubMed

Fleige, M J; Wiberg, G K H; Arenz, M

2015-06-01

We describe the development and test of an elevated pressure and temperature rotating disk electrode (RDE) system that allows measurements under well-defined mass transport conditions. As demonstrated for the oxygen reduction reaction on polycrystalline platinum (Pt) in 0.5M H2SO4, the setup can easily be operated in a pressure range of 1-101 bar oxygen, and temperature of 140 °C. Under such conditions, diffusion limited current densities increase by almost two orders of magnitude as compared to conventional RDE setups allowing, for example, fuel cell catalyst studies under more realistic conditions. Levich plots demonstrate that the mass transport is indeed well-defined, i.e., at low electrode potentials, the measured current densities are fully diffusion controlled, while at higher potentials, a mixed kinetic-diffusion controlled regime is observed. Therefore, the setup opens up a new field for RDE investigations under temperature and current density conditions relevant for low and high temperature proton exchange membrane fuel cells.

Rotating disk electrode system for elevated pressures and temperatures

NASA Astrophysics Data System (ADS)

Fleige, M. J.; Wiberg, G. K. H.; Arenz, M.

2015-06-01

We describe the development and test of an elevated pressure and temperature rotating disk electrode (RDE) system that allows measurements under well-defined mass transport conditions. As demonstrated for the oxygen reduction reaction on polycrystalline platinum (Pt) in 0.5M H2SO4, the setup can easily be operated in a pressure range of 1-101 bar oxygen, and temperature of 140 °C. Under such conditions, diffusion limited current densities increase by almost two orders of magnitude as compared to conventional RDE setups allowing, for example, fuel cell catalyst studies under more realistic conditions. Levich plots demonstrate that the mass transport is indeed well-defined, i.e., at low electrode potentials, the measured current densities are fully diffusion controlled, while at higher potentials, a mixed kinetic-diffusion controlled regime is observed. Therefore, the setup opens up a new field for RDE investigations under temperature and current density conditions relevant for low and high temperature proton exchange membrane fuel cells.

Prediction based proactive thermal virtual machine scheduling in green clouds.

PubMed

Kinger, Supriya; Kumar, Rajesh; Sharma, Anju

2014-01-01

Cloud computing has rapidly emerged as a widely accepted computing paradigm, but the research on Cloud computing is still at an early stage. Cloud computing provides many advanced features but it still has some shortcomings such as relatively high operating cost and environmental hazards like increasing carbon footprints. These hazards can be reduced up to some extent by efficient scheduling of Cloud resources. Working temperature on which a machine is currently running can be taken as a criterion for Virtual Machine (VM) scheduling. This paper proposes a new proactive technique that considers current and maximum threshold temperature of Server Machines (SMs) before making scheduling decisions with the help of a temperature predictor, so that maximum temperature is never reached. Different workload scenarios have been taken into consideration. The results obtained show that the proposed system is better than existing systems of VM scheduling, which does not consider current temperature of nodes before making scheduling decisions. Thus, a reduction in need of cooling systems for a Cloud environment has been obtained and validated.

Serial and parallel power equipment with high-temperature superconducting elements

NASA Technical Reports Server (NTRS)

Bencze, Laszlo; Goebl, Nandor; Palotas, Bela; Vajda, Istvan

1995-01-01

One of the prospective, practical applications of high-temperature superconductors is the fault-current limitation in electrical energy networks. The development and testing of experimental HTSC serial current limiters have been reported in the literature. A Hungarian electric power company has proposed the development of a parallel equipment for arc suppressing both in the industrial and customers' networks. On the basis of the company's proposal the authors have outlined the scheme of a compound circuit that can be applied both for current limitation and arc suppressing. In this paper the design principles and methods of the shunt equipment are presented. These principles involve the electrical, mechanical and cryogenic aspects with the special view on the electrical and mechanical connection between the HTSC material and the current lead. Preliminary experiments and tests have been carried out to demonstrate the validity of the design principles developed. The results of the experiments and of the technological investigations are presented.

Irradiation response of commercial, high-Tc superconducting tapes: Electromagnetic transport properties

DOE PAGES

Gapud, A. A.; Greenwood, N. T.; Alexander, J. A.; ...

2015-07-01

Effects of low dose irradiation on the electrical transport current properties of commercially available high-temperature superconducting, coated-conductor tapes were investigated, in view of potential applications in the irradiative environment of fusion reactors. Three different tapes, each with unique as-grown flux-pinning structures, were irradiated with Au and Ni ions at energies that provide a range of damage effects, with accumulated damage levels near that expected for conductors in a fusion reactor environment. Measurements using transport current determined the pre- and post-irradiation resistivity, critical current density, and pinning force density, yielding critical temperatures, irreversibility lines, and inferred vortex creep rates. Results showmore » that at the irradiation damage levels tested, any detriment to as-grown pre-irradiation properties is modest; indeed in one case already-superior pinning forces are enhanced, leading to higher critical currents.« less

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Growden, Tyler A.; Zhang, Weidong; Brown, Elliott R.; Storm, David F.; Hansen, Katurah; Fakhimi, Parastou; Meyer, David J.; Berger, Paul R.

2018-01-01

We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-transport solver was used to model and optimize designs with high levels of doping and ultra-thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-to-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (Jp) of 431 kA/cm2 was observed. Cross-gap near-UV (370-385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects.

Effect of Abrasive Machining on the Electrical Properties Cu86Mn12Ni2 Alloy Shunts

PubMed Central

Misti, Siti Nabilah; Bell, David

2017-01-01

This paper studies the effect of abrasive trimming on the electrical properties of Cu86Mn12Ni2 Manganin alloy shunt resistors. A precision abrasive trimming system for fine tuning the resistance tolerance of high current Manganin shunt resistors is proposed. The system is shown to be capable of reducing the resistance tolerance of 100 μΩ shunts from their standard value of ±5% to <±1% by removing controlled amounts of Manganin material using a square cut trim geometry. The temperature coefficient of resistance (TCR), high current, and high temperature performance of the trimmed shunts was compared to that of untrimmed parts to determine if trimming had any detrimental effect on these key electrical performance parameters of the device. It was shown that the TCR value was reduced following trimming with typical results of +106 ppm/°C and +93 ppm/°C for untrimmed and trimmed parts respectively. When subjected to a high current of 200 A the trimmed parts showed a slight increase in temperature rise to 203 °C, as compared to 194 °C for the untrimmed parts, but both had significant temporary increases in resistance of up to 1.3 μΩ. The results for resistance change following high temperature storage at 200 °C for 168 h were also significant for both untrimmed and trimmed parts with shifts of 1.85% and 2.29% respectively and these results were related to surface oxidation of the Manganin alloy which was accelerated for the freshly exposed surfaces of the trimmed part. PMID:28773236

Effect of Abrasive Machining on the Electrical Properties Cu86Mn12Ni₂ Alloy Shunts.

PubMed

Misti, Siti Nabilah; Birkett, Martin; Penlington, Roger; Bell, David

2017-07-29

This paper studies the effect of abrasive trimming on the electrical properties of Cu 86 Mn 12 Ni₂ Manganin alloy shunt resistors. A precision abrasive trimming system for fine tuning the resistance tolerance of high current Manganin shunt resistors is proposed. The system is shown to be capable of reducing the resistance tolerance of 100 μΩ shunts from their standard value of ±5% to <±1% by removing controlled amounts of Manganin material using a square cut trim geometry. The temperature coefficient of resistance (TCR), high current, and high temperature performance of the trimmed shunts was compared to that of untrimmed parts to determine if trimming had any detrimental effect on these key electrical performance parameters of the device. It was shown that the TCR value was reduced following trimming with typical results of +106 ppm/°C and +93 ppm/°C for untrimmed and trimmed parts respectively. When subjected to a high current of 200 A the trimmed parts showed a slight increase in temperature rise to 203 °C, as compared to 194 °C for the untrimmed parts, but both had significant temporary increases in resistance of up to 1.3 μΩ. The results for resistance change following high temperature storage at 200 °C for 168 h were also significant for both untrimmed and trimmed parts with shifts of 1.85% and 2.29% respectively and these results were related to surface oxidation of the Manganin alloy which was accelerated for the freshly exposed surfaces of the trimmed part.

The Footprint of Continental-Scale Ocean Currents on the Biogeography of Seaweeds

PubMed Central

Wernberg, Thomas; Thomsen, Mads S.; Connell, Sean D.; Russell, Bayden D.; Waters, Jonathan M.; Zuccarello, Giuseppe C.; Kraft, Gerald T.; Sanderson, Craig; West, John A.; Gurgel, Carlos F. D.

2013-01-01

Explaining spatial patterns of biological organisation remains a central challenge for biogeographic studies. In marine systems, large-scale ocean currents can modify broad-scale biological patterns by simultaneously connecting environmental (e.g. temperature, salinity and nutrients) and biological (e.g. amounts and types of dispersed propagules) properties of adjacent and distant regions. For example, steep environmental gradients and highly variable, disrupted flow should lead to heterogeneity in regional communities and high species turnover. In this study, we investigated the possible imprint of the Leeuwin (LC) and East Australia (EAC) Currents on seaweed communities across ~7,000 km of coastline in temperate Australia. These currents flow poleward along the west and east coasts of Australia, respectively, but have markedly different characteristics. We tested the hypothesis that, regional seaweed communities show serial change in the direction of current flow and that, because the LC is characterised by a weaker temperature gradient and more un-interrupted along-shore flow compared to the EAC, then coasts influenced by the LC have less variable seaweed communities and lower species turnover across regions than the EAC. This hypothesis was supported. We suggest that this pattern is likely caused by a combination of seaweed temperature tolerances and current-driven dispersal. In conclusion, our findings support the idea that the characteristics of continental-scale currents can influence regional community organisation, and that the coupling of ocean currents and marine biological structure is a general feature that transcends taxa and spatial scales. PMID:24260352

High temperature superconductor current leads

DOEpatents

Hull, John R.; Poeppel, Roger B.

1995-01-01

An electrical lead having one end for connection to an apparatus in a cryogenic environment and the other end for connection to an apparatus outside the cryogenic environment. The electrical lead includes a high temperature superconductor wire and an electrically conductive material distributed therein, where the conductive material is present at the one end of the lead at a concentration in the range of from 0 to about 3% by volume, and at the other end of the lead at a concentration of less than about 20% by volume. Various embodiments are shown for groups of high temperature superconductor wires and sheaths.

High temperature superconductor current leads

DOEpatents

Hull, J.R.; Poeppel, R.B.

1995-06-20

An electrical lead is disclosed having one end for connection to an apparatus in a cryogenic environment and the other end for connection to an apparatus outside the cryogenic environment. The electrical lead includes a high temperature superconductor wire and an electrically conductive material distributed therein, where the conductive material is present at the one end of the lead at a concentration in the range of from 0 to about 3% by volume, and at the other end of the lead at a concentration of less than about 20% by volume. Various embodiments are shown for groups of high temperature superconductor wires and sheaths. 9 figs.

Processing and Properties Of Refractory Zirconium Diboride Composites For Use In High Temperature Applications

NASA Technical Reports Server (NTRS)

Stackpoole, Margaret; Gusman, M.; Ellerby, D.; Johnson, S. M.; Arnold, Jim (Technical Monitor)

2001-01-01

The Thermal Protection Materials and Systems Branch at NASA Ames Research Center is involved in the development of a class of refractory oxidation-resistant diboride composites termed Ultra High Temperature Ceramics or UHTCs. These composites have good high temperature properties making them candidate materials for thermal protection system (TPS) applications. The current research focuses on improving processing methods to develop more reliable composites with enhanced thermal and mechanical properties. This presentation will concentrate on the processing of ZrB2/SiC composites. Some preliminary mechanical properties and oxidation data will also be presented.

Room temperature current injection polariton light emitting diode with a hybrid microcavity.

PubMed

Lu, Tien-Chang; Chen, Jun-Rong; Lin, Shiang-Chi; Huang, Si-Wei; Wang, Shing-Chung; Yamamoto, Yoshihisa

2011-07-13

The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electrodynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.

Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Hartmann, F.; Pfenning, A.; Rebello Sousa Dias, M.; Langer, F.; Höfling, S.; Kamp, M.; Worschech, L.; Castelano, L. K.; Marques, G. E.; Lopez-Richard, V.

2017-10-01

We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices.

Characterization of MgB2 Superconducting Hot Electron Bolometers

NASA Technical Reports Server (NTRS)

Cunnane, D.; Kawamura, J. H.; Wolak, M. A.; Acharya, N.; Tan, T.; Xi, X. X.; Karasik, B. S.

2014-01-01

Hot-Electron Bolometer (HEB) mixers have proven to be the best tool for high-resolution spectroscopy at the Terahertz frequencies. However, the current state of the art NbN mixers suffer from a small intermediate frequency (IF) bandwidth as well as a low operating temperature. MgB2 is a promising material for HEB mixer technology in view of its high critical temperature and fast thermal relaxation allowing for a large IF bandwidth. In this work, we have fabricated and characterized thin-film (approximately 15 nanometers) MgB2-based spiral antenna-coupled HEB mixers on SiC substrate. We achieved the IF bandwidth greater than 8 gigahertz at 25 degrees Kelvin and the device noise temperature less than 4000 degrees Kelvin at 9 degrees Kelvin using a 600 gigahertz source. Using temperature dependencies of the radiation power dissipated in the device we have identified the optical loss in the integrated microantenna responsible as a cause of the limited sensitivity of the current mixer devices. From the analysis of the current-voltage (IV) characteristics, we have derived the effective thermal conductance of the mixer device and estimated the required local oscillator power in an optimized device to be approximately 1 microwatts.

Effects of seasonal acclimatization on action potentials and sarcolemmal K+ currents in roach (Rutilus rutilus) cardiac myocytes.

PubMed

Badr, Ahmed; Hassinen, Minna; El-Sayed, Mohamed F; Vornanen, Matti

2017-03-01

Temperature sensitivity of electrical excitability is a potential limiting factor for high temperature tolerance of ectotherms. The present study examines whether heat resistance of electrical excitability of cardiac myocytes is modified by seasonal thermal acclimatization in roach (Rutilus rutilus), a eurythermal teleost species. To this end, temperature dependencies of ventricular action potentials (APs), and atrial and ventricular K + currents were measured from winter-acclimatized (WiR) and summer-acclimatized (SuR) roach. Under patch-clamp recording conditions, ventricular APs could be triggered over a wide range of temperatures (4-43°C) with prominent changes in resting membrane potential (RMP), AP duration and amplitude. In general, APs of SuR were slightly more tolerant to high temperatures than those of WiR, e.g. the break point temperature (T BP ) of RMP was 37.6±0.4°C in WiR and 41±1°C in SuR (p<0.05). Of the two major cardiac K + currents, the inward rectifier K + current (I K1 ) was particularly heat resistant in both SuR (T BP 39.4±0.4°C) and WiR (T BP 40.0±0.4°C) ventricular myocytes. The delayed rectifier K + current (I Kr ) was not as heat resistant as I K1 . Surprisingly, I Kr of WiR tolerated heat better (T BP 31.9±0.8°C) than I Kr of SuR (T BP 24.1±0.5°C) (p<0.05). I Kr (Erg2) channel transcripts of both atrial and ventricular myocytes were up-regulated in WiR. I K1 (Kir2) channel transcripts were not affected by seasonal acclimatization, although ventricular I K1 current was up-regulated in summer. Collectively, these findings show that thermal tolerance limits of K + currents in isolated myocytes between seasonally acclimatized roach are much less pronounced than the heat sensitivity of ECG variables in intact fish. Copyright © 2016 Elsevier Inc. All rights reserved.

Design of Water Temperature Control System Based on Single Chip Microcomputer

NASA Astrophysics Data System (ADS)

Tan, Hanhong; Yan, Qiyan

2017-12-01

In this paper, we mainly introduce a multi-function water temperature controller designed with 51 single-chip microcomputer. This controller has automatic and manual water, set the water temperature, real-time display of water and temperature and alarm function, and has a simple structure, high reliability, low cost. The current water temperature controller on the market basically use bimetal temperature control, temperature control accuracy is low, poor reliability, a single function. With the development of microelectronics technology, monolithic microprocessor function is increasing, the price is low, in all aspects of widely used. In the water temperature controller in the application of single-chip, with a simple design, high reliability, easy to expand the advantages of the function. Is based on the appeal background, so this paper focuses on the temperature controller in the intelligent control of the discussion.

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

NASA Astrophysics Data System (ADS)

Lin, Yu-Shu; Cheng, Po-Hsien; Huang, Kuei-Wen; Lin, Hsin-Chih; Chen, Miin-Jang

2018-06-01

Sub-10 nm high-K gate dielectrics are of critical importance in two-dimensional transition metal dichalcogenides (TMDs) transistors. However, the chemical inertness of TMDs gives rise to a lot of pinholes in gate dielectrics, resulting in large gate leakage current. In this study, sub-10 nm, uniform and pinhole-free Al2O3 high-K gate dielectrics on MoS2 were achieved by atomic layer deposition without surface functionalization, in which an ultrathin Al2O3 layer prepared with a short purge time at a low temperature of 80 °C offers the nucleation cites for the deposition of the overlaying oxide at a higher temperature. Conductive atomic force microscopy reveals the significant suppression of gate leakage current in the sub-10 nm Al2O3 gate dielectrics with the low-temperature nucleation layer. Raman and X-ray photoelectron spectroscopies indicate that no oxidation occurred during the deposition of the low-temperature Al2O3 nucleation layer on MoS2. With the high-quality sub-10 nm Al2O3 high-K gate dielectrics, low hysteresis and subthreshold swing were demonstrated on the normally-off top-gated MoS2 transistors.

Behavior of a high-temperature superconducting conductor on a round core cable at current ramp rates as high as 67.8 kA s-1 in background fields of up to 19 T

NASA Astrophysics Data System (ADS)

Michael, P. C.; Bromberg, L.; van der Laan, D. C.; Noyes, P.; Weijers, H. W.

2016-04-01

High temperature superconducting (HTS) conductor-on-round-core (CORC®) cables have been developed for use in power transmission systems and large high-field magnets. The use of high-current conductors for large-scale magnets reduces system inductance and limits the peak voltage needed for ramped field operation. A CORC® cable contains a large number of RE-Ba2Cu3O7-δ (RE = rare earth) (REBCO) coated conductors, helically wound in multiple layers on a thin, round former. Large-scale applications, such as fusion and accelerator magnets, require current ramp rates of several kilo-Amperes per second during pulsed operation. This paper presents results that demonstrate the electromagnetic stability of a CORC® cable during transient conditions. Measurements were performed at 4.2 K using a 1.55 m long CORC® cable in background fields of up to 19 T. Repeated current pulses in a background field of 19 T at current ramp rates of up to 67.8 kA s-1 to approximately 90% of the cable’s quench current at that field, did not show any sign of degradation in cable performance due to excessive ac loss or electromagnetic instability. The very high current ramp rates applied during these tests were used to compensate, to the extent possible, the limited cable length accommodated by the test facility, assuming that the measured results could be extrapolated to longer length cables operated at proportionally lower current ramp rates. No shift of the superconducting transition to lower current was measured when the current ramp rate was increased from 25 A s-1 to 67.8 kA s-1. These results demonstrate the viability of CORC® cables for use in low-inductance magnets that operate at moderate to high current ramp rates.

Modification to the Langley 8-foot high temperature tunnel for hypersonic propulsion testing

NASA Technical Reports Server (NTRS)

Reubush, D. E.; Puster, R. L.; Kelly, H. N.

1987-01-01

Described are the modifications currently under way to the Langley 8-Foot High Temperature Tunnel to produce a new, unique national resource for testing hypersonic air-breathing propulsion systems. The current tunnel, which has been used for aerothermal loads and structures research since its inception, is being modified with the addition of a LOX system to bring the oxygen content of the test medium up to that of air, the addition of alternate Mach number capability (4 and 5) to augment the current M=7 capability, improvements to the tunnel hardware to reduce maintenance downtime, the addition of a hydrogen system to allow the testing of hydrogen powered engines, and a new data system to increase both the quantity and quality of the data obtained.

Leakage Currents in Low-Voltage PME and BME Ceramic Capacitors

NASA Technical Reports Server (NTRS)

Teverovsky, Alexander

2015-01-01

Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.

Deposition temperature dependent optical and electrical properties of ALD HfO{sub 2} gate dielectrics pretreated with tetrakisethylmethylamino hafnium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, J.; School of Sciences, Anhui University of Science and Technology, Huainan 232001; He, G., E-mail: hegang@ahu.edu.cn

2015-10-15

Highlights: • ALD-derived HfO{sub 2} gate dielectrics have been deposited on Si substrates. • The leakage current mechanism for different deposition temperature was discussed. • Different emission at different field region has been determined precisely. - Abstract: The effect of deposition temperature on the growth rate, band gap energy and electrical properties of HfO{sub 2} thin film deposited by atomic layer deposition (ALD) has been investigated. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the growth rate and optical constant of ALD-derived HfO{sub 2} gate dielectrics are determined precisely. The deposition temperature dependent electrical properties of HfO{sub 2}more » films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. The leakage current mechanism for different deposition temperature has been discussed systematically. As a result, the optimized deposition temperature has been obtained to achieve HfO{sub 2} thin film with high quality.« less

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits

PubMed Central

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-01-01

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables. PMID:28773037

Bias Stress and Temperature Impact on InGaZnO TFTs and Circuits.

PubMed

Martins, Jorge; Bahubalindruni, Pydi; Rovisco, Ana; Kiazadeh, Asal; Martins, Rodrigo; Fortunato, Elvira; Barquinha, Pedro

2017-06-21

This paper focuses on the analysis of InGaZnO thin-film transistors (TFTs) and circuits under the influence of different temperatures and bias stress, shedding light into their robustness when used in real-world applications. For temperature-dependent measurements, a temperature range of 15 to 85 °C was considered. In case of bias stress, both gate and drain bias were applied for 60 min. Though isolated transistors show a variation of drain current as high as 56% and 172% during bias voltage and temperature stress, the employed circuits were able to counteract it. Inverters and two-TFT current mirrors following simple circuit topologies showed a gain variation below 8%, while the improved robustness of a cascode current mirror design is proven by showing a gain variation less than 5%. The demonstration that the proper selection of TFT materials and circuit topologies results in robust operation of oxide electronics under different stress conditions and over a reasonable range of temperatures proves that the technology is suitable for applications such as smart food packaging and wearables.

A theoretical analysis of the current-voltage characteristics of solar cells

NASA Technical Reports Server (NTRS)

Fang, R. C. Y.; Hauser, J. R.

1979-01-01

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

A Harsh Environment Wireless Pressure Sensing Solution Utilizing High Temperature Electronics

PubMed Central

Yang, Jie

2013-01-01

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines. PMID:23447006

A harsh environment wireless pressure sensing solution utilizing high temperature electronics.

PubMed

Yang, Jie

2013-02-27

Pressure measurement under harsh environments, especially at high temperatures, is of great interest to many industries. The applicability of current pressure sensing technologies in extreme environments is limited by the embedded electronics which cannot survive beyond 300 °C ambient temperature as of today. In this paper, a pressure signal processing and wireless transmission module based on the cutting-edge Silicon Carbide (SiC) devices is designed and developed, for a commercial piezoresistive MEMS pressure sensor from Kulite Semiconductor Products, Inc. Equipped with this advanced high-temperature SiC electronics, not only the sensor head, but the entire pressure sensor suite is capable of operating at 450 °C. The addition of wireless functionality also makes the pressure sensor more flexible in harsh environments by eliminating the costly and fragile cable connections. The proposed approach was verified through prototype fabrication and high temperature bench testing from room temperature up to 450 °C. This novel high-temperature pressure sensing technology can be applied in real-time health monitoring of many systems involving harsh environments, such as military and commercial turbine engines.

High Temperature Piezoelectric Drill

NASA Technical Reports Server (NTRS)

Bao, Xiaoqi; Scott, James; Boudreau, Kate; Bar-Cohen, Yoseph; Sherrit, Stewart; Badescu, Mircea; Shrout, Tom; Zhang, Shujun

2009-01-01

The current NASA Decadal mission planning effort has identified Venus as a significant scientific target for a surface in-situ sampling/analyzing mission. The Venus environment represents several extremes including high temperature (460 deg C), high pressure (9 MPa), and potentially corrosive (condensed sulfuric acid droplets that adhere to surfaces during entry) environments. This technology challenge requires new rock sampling tools for these extreme conditions. Piezoelectric materials can potentially operate over a wide temperature range. Single crystals, like LiNbO3, have a Curie temperature that is higher than 1000 deg C and the piezoelectric ceramics Bismuth Titanate higher than 600 deg C. A study of the feasibility of producing piezoelectric drills that can operate in the temperature range up to 500 deg C was conducted. The study includes the high temperature properties investigations of engineering materials and piezoelectric ceramics with different formulas and doping. The drilling performances of a prototype Ultrasonic/Sonic Drill/Corer (USDC) using high temperate piezoelectric ceramics and single crystal were tested at temperature up to 500 deg C. The detailed results of our study and a discussion of the future work on performance improvements are presented in this paper.

Probing anode degradation in automotive Li-ion batteries

NASA Astrophysics Data System (ADS)

Kwon, Ou Jung

The lithium-ion battery is drawing attention as a power source for future clean and fuel-efficient vehicles. Although the Li-ion battery presently shows best performance for energy density and power density compared to other rechargeable batteries, some degradation problems still remain as key challenges for long-term durability in automotive applications. Among those problems, Li deposition is well known for causing permanent capacity loss. Fundamental mechanisms of Li deposition in the carbon anode are, however, not fully understood, especially at subzero temperature and/or under high rate charge. This dissertation introduces comprehensive study of Li deposition using automotive 18650 Li-ion cells. The mechanism and relevant diagnostic methods as well as preventive charging protocol are discussed. In part one, a new diagnostic tool is introduced utilizing 3-electrode cell system, which measures thermodynamic and kinetic parameters of cathode and anode, respectively, as a function of temperature and SOC (state of charge): open circuit potential (OCP); Li diffusion coefficient in active particles; and internal resistance. These data are employed to understand electrochemical reaction and its thermal interaction under charging conditions that result in Li deposition. Part two provides a threshold parameter for the onset of Li deposition, which is not commonly used anode potential but charge capacity, or more specifically the amount of Li+ ions participating in intercalation reaction without Li deposition at given charging circumstances. This is called the critical charge capacity in this thesis, beyond which capacity loss at normal operating condition is observed, which becomes more serious as temperature is lowered and/or charge C-rate increases. Based on these experimental results, the mechanism of Li deposition is proposed as the concept of anode particle surface saturation, meaning that once the anode particle surface is saturated with Li in any charging circumstances, no more Li+ ions can be intercalated but should be reduced to metallic form on the anode particle surface. This is validated by calculating the distribution of Li concentration inside the anode particle with electrochemical modeling. In part three, a novel pulse charge protocol is developed, which consists of two steps. First high current charge/discharge pulses increase the cell temperature from a subzero temperature up to above room temperature in a short time, and next, high current charge provides the net charge capacity. Sluggish Li diffusion at low temperature becomes fast thanks to cell temperature elevation by high current pulses (1st step), which plays a role of preventing surface saturation during high current charge (2nd step). Thus, this charge protocol is not only Li deposition-free but also leads to rapid charge at subzero temperatures.

Weak links in high critical temperature superconductors

NASA Astrophysics Data System (ADS)

Tafuri, Francesco; Kirtley, John R.

2005-11-01

The traditional distinction between tunnel and highly transmissive barriers does not currently hold for high critical temperature superconducting Josephson junctions, both because of complicated materials issues and the intrinsic properties of high temperature superconductors (HTS). An intermediate regime, typical of both artificial superconductor-barrier-superconductor structures and of grain boundaries, spans several orders of magnitude in the critical current density and specific resistivity. The physics taking place at HTS surfaces and interfaces is rich, primarily because of phenomena associated with d-wave order parameter (OP) symmetry. These phenomena include Andreev bound states, the presence of the second harmonic in the critical current versus phase relation, a doubly degenerate state, time reversal symmetry breaking and the possible presence of an imaginary component of the OP. All these effects are regulated by a series of transport mechanisms, whose rules of interplay and relative activation are unknown. Some transport mechanisms probably have common roots, which are not completely clear and possibly related to the intrinsic nature of high-TC superconductivity. The d-wave OP symmetry gives unique properties to HTS weak links, which do not have any analogy with systems based on other superconductors. Even if the HTS structures are not optimal, compared with low critical temperature superconductor Josephson junctions, the state of the art allows the realization of weak links with unexpectedly high quality quantum properties, which open interesting perspectives for the future. The observation of macroscopic quantum tunnelling and the qubit proposals represent significant achievements in this direction. In this review we attempt to encompass all the above aspects, attached to a solid experimental basis of junction concepts and basic properties, along with a flexible phenomenological background, which collects ideas on the Josephson effect in the presence of d-wave pairing for different types of barriers.

Evaluation of advanced high rate Li-SOCl2 cells

NASA Technical Reports Server (NTRS)

Deligiannis, F.; Ang, V.; Dawson, S.; Frank, H.; Subbarao, S.

1986-01-01

Under NASA sponsorship, JPL is developing advanced, high rate Li-SOCl2 cells for future space missions. As part of this effort, Li-SOCl2 cells of various designs were examined for performance and safety. The cells differed from one another in several aspects, such as: nature of carbon cathode, catalysts, cell configuration, case polarity, and safety devices. Performance evaluation included constant-current discharge over a range of currents and temperatures. Abuse-testing consisted of shortcircuiting, charging, and over-discharge. Energy densities greater than 300 Wh/Kg at the C/2 rate were found for some designs. A cell design featuring a high-surface-area carbon cathode was found to deliver nearly 500 Wh/Kg at moderate discharge rates. Temperature influenced the performance significantly.

Fracture analysis of a transversely isotropic high temperature superconductor strip based on real fundamental solutions

NASA Astrophysics Data System (ADS)

Gao, Zhiwen; Zhou, Youhe

2015-04-01

Real fundamental solution for fracture problem of transversely isotropic high temperature superconductor (HTS) strip is obtained. The superconductor E-J constitutive law is characterized by the Bean model where the critical current density is independent of the flux density. Fracture analysis is performed by the methods of singular integral equations which are solved numerically by Gauss-Lobatto-Chybeshev (GSL) collocation method. To guarantee a satisfactory accuracy, the convergence behavior of the kernel function is investigated. Numerical results of fracture parameters are obtained and the effects of the geometric characteristics, applied magnetic field and critical current density on the stress intensity factors (SIF) are discussed.

High temperature ion channels and pores

NASA Technical Reports Server (NTRS)

Cheley, Stephen (Inventor); Gu, Li Qun (Inventor); Bayley, Hagan (Inventor); Kang, Xiaofeng (Inventor)

2011-01-01

The present invention includes an apparatus, system and method for stochastic sensing of an analyte to a protein pore. The protein pore may be an engineer protein pore, such as an ion channel at temperatures above 55.degree. C. and even as high as near 100.degree. C. The analyte may be any reactive analyte, including chemical weapons, environmental toxins and pharmaceuticals. The analyte covalently bonds to the sensor element to produce a detectable electrical current signal. Possible signals include change in electrical current. Detection of the signal allows identification of the analyte and determination of its concentration in a sample solution. Multiple analytes present in the same solution may also be detected.

Metallic Hydrogen - Potentially a High Energy Rocket Propellant

NASA Technical Reports Server (NTRS)

Cole, John; Silvera, Ike

2007-01-01

Pure metallic hydrogen is predicted to have a specific impulse (Isp) of 1700 seconds, but the reaction temperature is too high for current engine materials. Diluting metallic hydrogen with liquid hydrogen can reduce the reaction temperature to levels compatible with current material limits and still provide an Isp greater than 900 s. Metallic hydrogen has not yet been produced on earth, but experimental techniques exist that may change this situation. This paper will provide a brief description of metallic hydrogen and the status of experiments that may soon produce detectable quantities of this material in the lab. Also provided are some characteristics for diluted metallic hydrogen engines and launch vehicles.

Report on FY15 Two-Bar Thermal Ratcheting Test Results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yanli; Jetter, Robert I; Baird, Seth T

2015-06-22

Alloy 617 is a reference structural material for very high temperature components of advanced-gas cooled reactors with outlet temperatures in the range of . In order for designers to be able to use Alloy 617 for these high temperature components, Alloy 617 has to be approved for use in Section III (the nuclear section) of the American Society of Mechanical Engineers (ASME) Boiler and Pressure Vessel Code. A plan has been developed to submit a draft code for Alloy 617 to ASME Section III by 2015. However, the current rules in Subsection NH* for the evaluation of strain limits andmore » creep-fatigue damage using simplified methods based on elastic analysis have been deemed inappropriate for Alloy 617 at temperatures above . The rationale for this exclusion is that at higher temperatures it is not feasible to decouple plasticity and creep deformation, which is the basis for the current simplified rules. This temperature, , is well below the temperature range of interest for this material in High Temperature Gas Cooled Reactor (HTGR) applications. The only current alternative is, thus, a full inelastic analysis which requires sophisticated material models which have been formulated but not yet verified. To address this issue, proposed code rules have been developed which are based on the use of elastic-perfectly plastic (EPP) analysis methods and which are expected to be applicable to very high temperatures. These newly proposed rules also address a long-term objective to provide an option for more simple, comprehensive and easily applied rules than the current so called simplified rules These two-bar tests discussed herein are part of an ongoing series of tests with cyclic loading at high temperatures using specimens representing key features of potential component designs. The initial focus of the two-bar ratcheting test program, to verify the procedure for evaluation of strain limits for Alloy 617 at very high temperatures, has been expanded to respond to guidance from ASME Code committees that the proposed EPP methodology should also apply to other Subsection NH materials throughout their allowed temperature range. To support these objectives, two suites of tests have been accomplished during this reporting period. One suite addresses the issue of the response of Alloy 617 at a lower temperature with tests in range of 500 800oC and a few at 350 650°C. The other suite addresses the response of SS316H up to its current maximum allowed temperature of 1500°F (815°C) In the two-bar test methodology, the two bars can be viewed as specimens taken out of a tubular component across the wall thickness representing the inner wall element and the outer wall element respectively. The two bars are alternately heated and cooled under sustained axial loading to generate ratcheting. A sustained hold time is introduced at the hot extreme of the cycle to capture the accelerated ratcheting and strain accumulation due to creep. Since the boundary conditions are a combination of strain control and load control it is necessary to use two coupled servo-controlled testing machines to achieve the key features of the two-bar representation of actual component behavior. Two-bar thermal ratcheting test results with combinations of applied mean stresses, transient temperature difference and heating and cooling rates were recorded. Tests performed at heating and cooling rates of 30°C/min are comparable to a strain rate of 10 ⁻⁵/sec. At high mean stresses in tension the direction of ratcheting was in-phase with the load, e.g. tensile strain ratcheting under high tensile loading; however, at lower loads, strain ratcheting in compression was observed under net tensile mean stresses. The strain accumulation was proportional to the applied thermal load. However, there was a narrow range of applied load in which the high applied thermal loading did not result in significant strain accumulation. Unfortunately, when the proposed EPP strain limit evaluation rules were applied to the loading history for the two-bar configuration, the predicted narrow range of low strain accumulation did not coincide with the experimental data. However, by the use of inelastic analysis in conjunction with an analytic experiment it was possible to show that the EPP strain limit code case rules could be applied to high temperature structures where the stress and temperature is not uniform throughout which is the general case. Interestingly, the suite of tests on Alloy 617 at the lower temperature range of 500°C to 800oC showed good agreement with the proposed EPP strain limit rules with a much wider band of applied load that exhibited minimal ratcheting. The four tests conducted at the lower temperature range of 350°C to 650°C showed no ratcheting. The suite of tests on SS316H at a temperature range of 515°C to 815°C resembled the results from the tests on Alloy 617 at 650°C to 950°C. Both exhibited a narrow band of applied load wher...« less

High-Temperature Capacitor Polymer Films

NASA Astrophysics Data System (ADS)

Tan, Daniel; Zhang, Lili; Chen, Qin; Irwin, Patricia

2014-12-01

Film capacitor technology has been under development for over half a century to meet various applications such as direct-current link capacitors for transportation, converters/inverters for power electronics, controls for deep well drilling of oil and gas, direct energy weapons for military use, and high-frequency coupling circuitry. The biaxially oriented polypropylene film capacitor remains the state-of-the-art technology; however, it is not able to meet increasing demand for high-temperature (>125°C) applications. A number of dielectric materials capable of operating at high temperatures (>140°C) have attracted investigation, and their modifications are being pursued to achieve higher volumetric efficiency as well. This paper highlights the status of polymer dielectric film development and its feasibility for capacitor applications. High-temperature polymers such as polyetherimide (PEI), polyimide, and polyetheretherketone were the focus of our studies. PEI film was found to be the preferred choice for high-temperature film capacitor development due to its thermal stability, dielectric properties, and scalability.

Assessment of quasi-linear effect of RF power spectrum for enabling lower hybrid current drive in reactor plasmas

NASA Astrophysics Data System (ADS)

Cesario, Roberto; Cardinali, Alessandro; Castaldo, Carmine; Amicucci, Luca; Ceccuzzi, Silvio; Galli, Alessandro; Napoli, Francesco; Panaccione, Luigi; Santini, Franco; Schettini, Giuseppe; Tuccillo, Angelo Antonio

2017-10-01

The main research on the energy from thermonuclear fusion uses deuterium plasmas magnetically trapped in toroidal devices. To suppress the turbulent eddies that impair thermal insulation and pressure tight of the plasma, current drive (CD) is necessary, but tools envisaged so far are unable accomplishing this task while efficiently and flexibly matching the natural current profiles self-generated at large radii of the plasma column [1-5]. The lower hybrid current drive (LHCD) [6] can satisfy this important need of a reactor [1], but the LHCD system has been unexpectedly mothballed on JET. The problematic extrapolation of the LHCD tool at reactor graded high values of, respectively, density and temperatures of plasma has been now solved. The high density problem is solved by the FTU (Frascati Tokamak Upgrade) method [7], and solution of the high temperature one is presented here. Model results based on quasi-linear (QL) theory evidence the capability, w.r.t linear theory, of suitable operating parameters of reducing the wave damping in hot reactor plasmas. Namely, using higher RF power densities [8], or a narrower antenna power spectrum in refractive index [9,10], the obstacle for LHCD represented by too high temperature of reactor plasmas should be overcome. The former method cannot be used for routinely, safe antenna operations, Thus, only the latter key is really exploitable in a reactor. The proposed solutions are ultimately necessary for viability of an economic reactor.

Enlightening the ultrahigh electrical conductivities of doped double-wall carbon nanotube fibers by Raman spectroscopy and first-principles calculations.

PubMed

Tristant, Damien; Zubair, Ahmed; Puech, Pascal; Neumayer, Frédéric; Moyano, Sébastien; Headrick, Robert J; Tsentalovich, Dmitri E; Young, Colin C; Gerber, Iann C; Pasquali, Matteo; Kono, Junichiro; Leotin, Jean

2016-12-01

Highly aligned, packed, and doped carbon nanotube (CNT) fibers with electrical conductivities approaching that of copper have recently become available. These fibers are promising for high-power electrical applications that require light-weight, high current-carrying capacity cables. However, a microscopic understanding of how doping affects the electrical conductance of such CNT fibers in a quantitative manner has been lacking. Here, we performed Raman spectroscopy measurements combined with first-principles calculations to determine the position of the average Fermi energy and to obtain the temperature of chlorosulfonic-acid-doped double-wall CNT fibers under high current. Due to the unique way in which double-wall CNT Raman spectra depend on doping, it is possible to use Raman data to determine the doping level quantitatively. The correspondence between the Fermi level shift and the carbon charge transfer is derived from a tight-binding model and validated by several calculations. For the doped fiber, we were able to associate an average Fermi energy shift of ∼-0.7 eV with a conductance increase by a factor of ∼5. Furthermore, since current induces heating, local temperature determination is possible. Through the Stokes-to-anti-Stokes intensity ratio of the G-band peaks, we estimated a temperature rise at the fiber surface of ∼135 K at a current density of 2.27 × 10 8 A m -2 identical to that from the G-band shift, suggesting that thermalization between CNTs is well achieved.

Studies of the Superconducting Transition in the Mo/Au-Bilayer Thin Films

NASA Technical Reports Server (NTRS)

Sadleir, John; Smith, Stephen; Iyomoto, naoko; Bandler, Simon; Chervenak, Jay; Brown, Ari; Brekowsky, Regis; Kilbourne, Caroline; Robinson, Ian

2007-01-01

At NASA Goddard, microcalorimeter arrays using superconducting transition edge sensor thermometers (TESs) are under development for high energy resolution X-ray astrophysics applications. We report on our studies of the superconducting transition in our Mo/Au-bilayer TES films including: low current measurements of the superconducting bilayer's resistance transition versus temperature on pixels with different normal metal absorber attachment designs and measured temperature scaling of the critical current and critical magnetic field.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, J.; Bollinger, A. T.; He, X.

The origin of high-temperature superconductivity in copper oxides and the nature of the ‘normal’ state above the critical temperature are widely debated. In underdoped copper oxides, this normal state hosts a pseudogap and other anomalous features; and in the overdoped materials, the standard Bardeen–Cooper–Schrieffer description fails, challenging the idea that the normal state is a simple Fermi liquid. To investigate these questions, we have studied the behaviour of single-crystal La 2–xSr xCuO 4 films through which an electrical current is being passed. Here we report that a spontaneous voltage develops across the sample, transverse (orthogonal) to the electrical current. The dependence of this voltage on probe current, temperature, in-plane device orientation and doping shows that this behaviour is intrinsic, substantial, robust and present over a broad range of temperature and doping. If the current direction is rotated in-plane by an anglemore » $$\\phi$$, the transverse voltage oscillates as sin(2$$\\phi$$), breaking the four-fold rotational symmetry of the crystal. The amplitude of the oscillations is strongly peaked near the critical temperature for superconductivity and decreases with increasing doping. We find that these phenomena are manifestations of unexpected in-plane anisotropy in the electronic transport. The films are very thin and epitaxially constrained to be tetragonal (that is, with four-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every $$\\phi$$. The origin of this anisotropy is purely electronic—the so-called electronic nematicity. Unusually, the nematic director is not aligned with the crystal axes, unless a substantial orthorhombic distortion is imposed. The fact that this anisotropy occurs in a material that exhibits high-temperature superconductivity may not be a coincidence.« less

Spontaneous breaking of rotational symmetry in copper oxide superconductors

DOE PAGES

Wu, J.; Bollinger, A. T.; He, X.; ...

2017-07-26

The origin of high-temperature superconductivity in copper oxides and the nature of the ‘normal’ state above the critical temperature are widely debated. In underdoped copper oxides, this normal state hosts a pseudogap and other anomalous features; and in the overdoped materials, the standard Bardeen–Cooper–Schrieffer description fails, challenging the idea that the normal state is a simple Fermi liquid. To investigate these questions, we have studied the behaviour of single-crystal La 2–xSr xCuO 4 films through which an electrical current is being passed. Here we report that a spontaneous voltage develops across the sample, transverse (orthogonal) to the electrical current. The dependence of this voltage on probe current, temperature, in-plane device orientation and doping shows that this behaviour is intrinsic, substantial, robust and present over a broad range of temperature and doping. If the current direction is rotated in-plane by an anglemore » $$\\phi$$, the transverse voltage oscillates as sin(2$$\\phi$$), breaking the four-fold rotational symmetry of the crystal. The amplitude of the oscillations is strongly peaked near the critical temperature for superconductivity and decreases with increasing doping. We find that these phenomena are manifestations of unexpected in-plane anisotropy in the electronic transport. The films are very thin and epitaxially constrained to be tetragonal (that is, with four-fold symmetry), so one expects a constant resistivity and zero transverse voltage, for every $$\\phi$$. The origin of this anisotropy is purely electronic—the so-called electronic nematicity. Unusually, the nematic director is not aligned with the crystal axes, unless a substantial orthorhombic distortion is imposed. The fact that this anisotropy occurs in a material that exhibits high-temperature superconductivity may not be a coincidence.« less

Diamond detectors for high-temperature transactinide chemistry experiments

NASA Astrophysics Data System (ADS)

Steinegger, Patrick; Dressler, Rugard; Eichler, Robert; Piguet, Dave; Streuli, Silvan; Türler, Andreas

2017-04-01

Here, we present the fabrication details and functional tests of diamond-based α-spectroscopic sensors, dedicated for high-temperature experiments, targeting the chemistry of transactinide elements. Direct heating studies with this sensor material, revealed a current upper temperature threshold for a safe α-spectroscopic operation of Tdet = 453 K . Up to this temperature, the diamond sensor could be operated in a stable manner over long time periods of the order of days. A satisfying resolution of ≈ 50 keVFWHM was maintained throughout all conducted measurements. However, exceeding the mentioned temperature limit led to a pronounced spectroscopic degradation in the range of 453 - 473 K , thereby preventing any further α-spectroscopic application. These findings are in full agreement with available literature data. The presented detector development generally enables the chemical investigation of more short-lived and less volatile transactinide elements and their compounds, yet unreachable with the currently employed silicon-based solid state sensors. In a second part, the design, construction, and α-spectroscopic performance of a 4-segmented diamond detector, dedicated and used for transactinide element research, is given as an application example.

Low temperature fabrication of VO x thin films for uncooled IR detectors by direct current reactive magnetron sputtering method

NASA Astrophysics Data System (ADS)

Dai, Jun; Wang, Xingzhi; He, Shaowei; Huang, Ying; Yi, Xinjian

2008-03-01

Vanadium oxide films have been fabricated on Si3N4-film-coated silicon substrates by direct current reactive magnetron sputtering method. Conditions of deposition are optimized making use of parameters such as sputtering time, dc power, oxygen partial pressure and substrate temperature. X-ray diffraction indicates that the film is a mixture of VO2, V2O3, and V3O5. Four-probe measurement shows that the VOx thin film owns high temperature coefficient of resistance (TCR ∼-2.05%/°C) and suitable square resistance 18.40 kΩ/□ (measured at 25 °C), indicating it is a well candidate material for uncooled IR detectors. In addition, IR absorption in the wavelength of 2-16 μm has been characterized. It is worth noting that the films are sputtered at a relatively low temperature of 210 °C in a controlled Ar/O2 atmosphere. Compared to traditional craft, this method needs no post-anneal at high temperature (400-500 °C).

Spectroscopic study of transparency current in mid-infrared quantum cascade lasers.

PubMed

Revin, Dmitry G; Hassan, Randa S; Krysa, Andrey B; Wang, Yongrui; Belyanin, Alexey; Kennedy, Kenneth; Atkins, Chris N; Cockburn, John W

2012-08-13

We report measurements which give direct insight into the origins of the transparency current for λ ~5 µm In0.6Ga0.4As/In0.42Al0.58As quantum cascade lasers in the temperature range of 80-280 K. The transparency current values have been found from broadband transmission measurements through the laser waveguides under sub-threshold operating conditions. Two active region designs were compared. The active region of the first laser is based on double-LO-phonon relaxation approach, while the second device has only one lower level, without specially designed resonant LO-phonon assisted depopulation. It is shown that transparency current contributes more than 70% to the magnitude of threshold current at high temperatures for both designs.

Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Babichev, A. V.; Karachinsky, L. Ya.

2015-11-15

The lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping are demonstrated. The quantum-cascade laser heterostructure is grown by molecular-beam epitaxy technique. Despite the relatively short laser cavity length and high level of external loss the laser shows the lasing in the temperature range of 80–220 K. The threshold current density below 4 kA/cm{sup 2} at 220 K with the characteristic temperature T{sub 0} = 123 K was demonstrated.

Separating heat stress from moisture stress: analyzing yield response to high temperature in irrigated maize

NASA Astrophysics Data System (ADS)

Carter, Elizabeth K.; Melkonian, Jeff; Riha, Susan J.; Shaw, Stephen B.

2016-09-01

Several recent studies have indicated that high air temperatures are limiting maize (Zea mays L.) yields in the US Corn Belt and project significant yield losses with expected increases in growing season temperatures. Further work has suggested that high air temperatures are indicative of high evaporative demand, and that decreases in maize yields which correlate to high temperatures and vapor pressure deficits (VPD) likely reflect underlying soil moisture limitations. It remains unclear whether direct high temperature impacts on yields, independent of moisture stress, can be observed under current temperature regimes. Given that projected high temperature and moisture may not co-vary the same way as they have historically, quantitative analyzes of direct temperature impacts are critical for accurate yield projections and targeted mitigation strategies under shifting temperature regimes. To evaluate yield response to above optimum temperatures independent of soil moisture stress, we analyzed climate impacts on irrigated maize yields obtained from the National Corn Growers Association (NCGA) corn yield contests for Nebraska, Kansas and Missouri. In irrigated maize, we found no evidence of a direct negative impact on yield by daytime air temperature, calculated canopy temperature, or VPD when analyzed seasonally. Solar radiation was the primary yield-limiting climate variable. Our analyses suggested that elevated night temperature impacted yield by increasing rates of phenological development. High temperatures during grain-fill significantly interacted with yields, but this effect was often beneficial and included evidence of acquired thermo-tolerance. Furthermore, genetics and management—information uniquely available in the NCGA contest data—explained more yield variability than climate, and significantly modified crop response to climate. Thermo-acclimation, improved genetics and changes to management practices have the potential to partially or completely offset temperature-related yield losses in irrigated maize.

HIGH TEMPERATURE REACTOR

DOEpatents

Kulsrud, R.M.; Spitzer, L. Jr.

1961-12-12

An apparatus of the stellarator type for heating a plasma to high temperatures is designed. Circularizers at the end of then helical windings produce a circular magnetic surface and provide improved confining and heating of the plasma. Reverse curvature sections formed in the end loops of the reaction tube provide increased plasma pressure for a given magnetic field pressure and thereby minimize the current flow in the helical windings. (AEC)

Method of fabricating a (1223) Tl-Ba-Ca-Cu-O superconductor

DOEpatents

Tkaczyk, John Eric; Lay, Kenneth Wilbur; He, Qing

1997-01-01

A method is disclosed for fabricating a polycrystalline <223> thallium-containing superconductor having high critical current at elevated temperatures and in the presence of a magnetic field. A powder precursor containing compounds other than thallium is compressed on a substrate. Thallium is incorporated in the densified powder precursor at a high temperature in the presence of a partial pressure of a thallium-containing vapor.

Optimize out-of-core thermionic energy conversion for nuclear electric propulsion

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

Current designs for out of core thermionic energy conversion (TEC) to power nuclear electric propulsion (NEP) were evaluated. Approaches to improve out of core TEC are emphasized and probabilities for success are indicated. TEC gains are available with higher emitter temperatures and greater power densities. Good potentialities for accommodating external high temperature, high power density TEC with heat pipe cooled reactors exist.

Response of the Vegetation-Climate System to High Temperature (Invited)

NASA Astrophysics Data System (ADS)

Berry, J. A.

2009-12-01

High temperature extremes may lead to inhibition of photosynthesis and stomatal closure at the leaf scale. When these responses occur over regional scales, they can initiate a positive feedback loop in the coupled vegetation-climate system. The fraction of net radiation that is used by the land surface to evaporate water decreases leading to deeper, drier boundary layers, fewer clouds, increased solar radiation reaching the surface, and possibility reduced precipitation. These interactions within the vegetation-climate system may amplify natural (or greenhouse gas forced) variations in temperature and further stress the vegetation. Properly modeling of this system depends, among other things, on getting the plant responses to high temperature correct. I will review the current state of this problem and present some studies of rain forest trees to high temperature and drought conducted in the Biosphere 2 enclosure that illustrate how experiments in controlled systems can contribute to our understanding of complex systems to extreme events.

Effects of pressure and temperature on sintering of Cr-doped Al2O3 by pulsed electric current sintering process

NASA Astrophysics Data System (ADS)

Dang, K. Q.; Nanko, M.

2011-03-01

The aluminium oxide crystal, Al2O3, which contains a small amount of chromium, Cr, is called ruby. Pulsed electric current sintering (PECS) was applied to sinter ruby polycrystals. Cr2O3-Al2O3 powder mixture prepared by drying an aqueous slurry containing amounts of Al2O3 and Cr(NO3)3 was consolidated by PECS process. The PECS process was performed in vacuum at sintering temperature raging from 1100 to 1300°C with heating rate of 2 K/min under applied uniaxial pressure varied from 40 to 100 MPa. This study found that highly densified and transparent Cr-doped Al2O3 can be obtained by the PECS process with the high applied pressure at sintering temperature of 1200°C.

Contactless system of excitation current measurement in the windings with high inductance

NASA Astrophysics Data System (ADS)

Chubraeva, L.; Evseev, E.; Timofeev, S.

2018-02-01

The results of development, manufacturing and testing of a special contactless maintenance-free excitation current measurement system intended for the windings with high inductance, typical for superconductive alternators, are presented. The system was assembled on the brushless exciter is intended for 1 MVA wind-power generator with the winding, manufactured of high-temperature superconductors (HTSC). The alternator with brushless exciter were manufactured and successfully tested.

High Power Density Motors

NASA Technical Reports Server (NTRS)

Kascak, Daniel J.

2004-01-01

With the growing concerns of global warming, the need for pollution-free vehicles is ever increasing. Pollution-free flight is one of NASA's goals for the 21" Century. , One method of approaching that goal is hydrogen-fueled aircraft that use fuel cells or turbo- generators to develop electric power that can drive electric motors that turn the aircraft's propulsive fans or propellers. Hydrogen fuel would likely be carried as a liquid, stored in tanks at its boiling point of 20.5 K (-422.5 F). Conventional electric motors, however, are far too heavy (for a given horsepower) to use on aircraft. Fortunately the liquid hydrogen fuel can provide essentially free refrigeration that can be used to cool the windings of motors before the hydrogen is used for fuel. Either High Temperature Superconductors (HTS) or high purity metals such as copper or aluminum may be used in the motor windings. Superconductors have essentially zero electrical resistance to steady current. The electrical resistance of high purity aluminum or copper near liquid hydrogen temperature can be l/lOO* or less of the room temperature resistance. These conductors could provide higher motor efficiency than normal room-temperature motors achieve. But much more importantly, these conductors can carry ten to a hundred times more current than copper conductors do in normal motors operating at room temperature. This is a consequence of the low electrical resistance and of good heat transfer coefficients in boiling LH2. Thus the conductors can produce higher magnetic field strengths and consequently higher motor torque and power. Designs, analysis and actual cryogenic motor tests show that such cryogenic motors could produce three or more times as much power per unit weight as turbine engines can, whereas conventional motors produce only 1/5 as much power per weight as turbine engines. This summer work has been done with Litz wire to maximize the current density. The current is limited by the amount of heat it generates. By increasing the heat transfer out of the wire, the wires can carry a larger current and therefore produce more force. This was done by increasing the surface area of the wire to allow more coolant to flow over it. Litz wire was used because it can carry high frequency current. It also can be deformed into configurations that would increase the surface area. The best configuration was determined by heat transfer and force plots that were generated using Maxwell 2D. Future work will be done by testing and measuring the thrust force produced by the wires in a magnetic field.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, F.; Hoard, R.W.

1994-05-10

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla are disclosed. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field. 4 figures.

High-field magnets using high-critical-temperature superconducting thin films

DOEpatents

Mitlitsky, Fred; Hoard, Ronald W.

1994-01-01

High-field magnets fabricated from high-critical-temperature superconducting ceramic (HTSC) thin films which can generate fields greater than 4 Tesla. The high-field magnets are made of stackable disk-shaped substrates coated with HTSC thin films, and involves maximizing the critical current density, superconducting film thickness, number of superconducting layers per substrate, substrate diameter, and number of substrates while minimizing substrate thickness. The HTSC thin films are deposited on one or both sides of the substrates in a spiral configuration with variable line widths to increase the field.

Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1999-08-24

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Increased Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

DOEpatents

Li, Yaun-Min; Bennett, Murray S.; Yang, Liyou

1997-07-08

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

The Effects of Commercial Cool Water Washing of Shell Eggs on Haugh Unit, Vitelline Membrane Strength, Aerobic Microorganisms and Fungi

USDA-ARS?s Scientific Manuscript database

Current egg washing practices utilize wash water temperatures averaging 49°C, and have been found to increase internal egg temperature by 6.7 to 7.8°C. These high temperatures create a more optimal environment for bacterial growth, including Salmonella Enteritidis (SE), if it is present. SE is the...

Radiation and Temperature Hard Multi-Pixel Avalanche Photodiodes

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak (Inventor); Starikov, David (Inventor); Pillai, Rajeev (Inventor)

2017-01-01

The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

Effect of doping on the forward current-transport mechanisms in a metal-insulator-semiconductor contact to INP:ZN grown by metal organic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Cova, P.; Singh, A.; Medina, A.; Masut, R. A.

1998-04-01

A detailed study of the effect of doping density on current transport was undertaken in Au metal-insulator-semiconductor (MIS) contacts fabricated on Zn-doped InP layers grown by metal organic vapor phase epitaxy. A recently developed method was used for the simultaneous analysis of the current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics in an epitaxial MIS diode which brings out the contributions of different current-transport mechanisms to the total current. I- V and high-frequency C- V measurements were performed on two MIS diodes at different temperatures in the range 220-395 K. The barrier height at zero bias of Au/InP:Zn MIS diodes, φ0 (1.06 V±10%), was independent both of the Zn-doping density and of the surface preparation. The interface state density distribution Nss as well as the thickness of the oxide layer (2.2±15% nm) unintentionally grown before Au deposition were independent of the Zn-doping concentration in the range 10 16< NA<10 17 cm -3; not so the effective potential barrier χ of the insulator layer and the density of the mid-gap traps. χ was much lower for the highly-doped sample. Our results indicate that at high temperatures, independent of the Zn-doping concentration, the interfacial layer-thermionic (ITE) and interfacial layer-diffusion (ID) mechanisms compete with each other to control the current transport. At intermediate temperatures, however, ITE and ID will no longer be the only dominant mechanisms in the MIS diode fabricated on the highly-doped sample. In this case, the assumption of a generation-recombination current permits a better fit to the experimental data. Analysis of the data suggests that the generation-recombination current, observed only in the highly-doped sample, is associated with an increase in the Zn-doping density. From the forward I- V data for this diode we obtained the energy level (0.60 eV from the conduction band) for the most effective recombination centers.

Power Generation from a Radiative Thermal Source Using a Large-Area Infrared Rectenna

NASA Astrophysics Data System (ADS)

Shank, Joshua; Kadlec, Emil A.; Jarecki, Robert L.; Starbuck, Andrew; Howell, Stephen; Peters, David W.; Davids, Paul S.

2018-05-01

Electrical power generation from a moderate-temperature thermal source by means of direct conversion of infrared radiation is important and highly desirable for energy harvesting from waste heat and micropower applications. Here, we demonstrate direct rectified power generation from an unbiased large-area nanoantenna-coupled tunnel diode rectifier called a rectenna. Using a vacuum radiometric measurement technique with irradiation from a temperature-stabilized thermal source, a generated power density of 8 nW /cm2 is observed at a source temperature of 450 °C for the unbiased rectenna across an optimized load resistance. The optimized load resistance for the peak power generation for each temperature coincides with the tunnel diode resistance at zero bias and corresponds to the impedance matching condition for a rectifying antenna. Current-voltage measurements of a thermally illuminated large-area rectenna show current zero crossing shifts into the second quadrant indicating rectification. Photon-assisted tunneling in the unbiased rectenna is modeled as the mechanism for the large short-circuit photocurrents observed where the photon energy serves as an effective bias across the tunnel junction. The measured current and voltage across the load resistor as a function of the thermal source temperature represents direct current electrical power generation.

Analysis of uncertainties in turbine metal temperature predictions

NASA Technical Reports Server (NTRS)

Stepka, F. S.

1980-01-01

An analysis was conducted to examine the extent to which various factors influence the accuracy of analytically predicting turbine blade metal temperatures and to determine the uncertainties in these predictions for several accuracies of the influence factors. The advanced turbofan engine gas conditions of 1700 K and 40 atmospheres were considered along with those of a highly instrumented high temperature turbine test rig and a low temperature turbine rig that simulated the engine conditions. The analysis showed that the uncertainty in analytically predicting local blade temperature was as much as 98 K, or 7.6 percent of the metal absolute temperature, with current knowledge of the influence factors. The expected reductions in uncertainties in the influence factors with additional knowledge and tests should reduce the uncertainty in predicting blade metal temperature to 28 K, or 2.1 percent of the metal absolute temperature.

Nondestructive evaluation techniques for high-temperature ceramic components. Quarterly report, October--December 1977. [Silicon carbide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1978-02-01

The overall objective of this program is to assess and develop nondestructive evaluation procedures for high-temperature ceramics. The program is currently evaluating ceramic heat-exchanger tubing. Ceramic heat exchangers would be useful, for example, in coal-fired Brayton conversion or waste heat-recovery systems. The use of ceramic heat exchangers will allow working fluids to reach temperatures up to 1230/sup 0/C, and, with further materials development, possibly 1650/sup 0/C. If superalloys were employed, working fluids would be limited to approximately 800/sup 0/C. The use of working fluids at higher temperatures would result in more efficient systems. Furthermore, ceramic components are lighter than metallicmore » ones and are made from less costly and more abundant elements. In addition, ceramic heat exchangers would be more resistant to corrosion. In the current NDE effort, several acoustic, optical, and radiographic techniques are being examined for their effectiveness in testing silicon carbide tubing. Some results employing dye-enhanced radiography are discussed.« less

High-Temperature Annealing of CdZnTe Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, J.; Hwang, S.; Yu, H.

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

High-Temperature Annealing of CdZnTe Detectors

DOE PAGES

Suh, J.; Hwang, S.; Yu, H.; ...

2017-11-10

The electrical properties of CdZnTe(CZT) above the melting point of tellurium (Te) inclusions were determined during in situ annealing. The thermal annealing cycles of the CZT detectors were 490 °C, 530 °C, and 570 °C continuously, which were higher than the melting points of elemental Te and Te inclusions and lower than the sublimation temperature of CZT. Unexpectedly, the CZT detectors exhibited very low leakage current at room temperature after the thermal annealing cycles due to the formation of rectifying contacts. The activation energy of high-resistivity CZT was 0.81 eV indicating pinning of Fermi level nearly in the middle ofmore » bandgap. At room temperature, CZT detectors with rectifying contacts showed clearly the 59.5-keV gamma-ray peak of Am-241. As a result, observed fluctuations of the leakage current at about 470 °C might have originated from a mixed conductivity of liquid and solid CZT due to the melting of Te inclusions.« less

Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Lingqin, E-mail: lqhuang@jsnu.edu.cn, E-mail: dwang121@dlut.edu.cn; Wang, Dejun, E-mail: lqhuang@jsnu.edu.cn, E-mail: dwang121@dlut.edu.cn

The barrier characteristics of Pt contacts to relatively highly doped (∼1 × 10{sup 18 }cm{sup −3}) 4H-SiC were investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 160–573 K. The barrier height and ideally factor estimated from the I-V characteristics based on the thermionic emission model are abnormally temperature-dependent, which can be explained by assuming the presence of a double Gaussian distribution (GD) of inhomogeneous barrier heights. However, in the low temperature region (160–323 K), the obtained mean barrier height according to GD is lower than the actual mean value from C-V measurement. The values of barrier height determined from themore » thermionic field emission model are well consistent with those from the C-V measurements, which suggest that the current transport process could be modified by electron tunneling at low temperatures.« less

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition.

PubMed

Tzou, An-Jye; Chu, Kuo-Hsiung; Lin, I-Feng; Østreng, Erik; Fang, Yung-Sheng; Wu, Xiao-Peng; Wu, Bo-Wei; Shen, Chang-Hong; Shieh, Jia-Ming; Yeh, Wen-Kuan; Chang, Chun-Yen; Kuo, Hao-Chung

2017-12-01

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N 2 -based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H 2 /NH 3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoelectron spectroscopy (XPS) spectroscopy confirmed that the native oxide can be effectively decomposed by hydrogen plasma. Following the in situ ALD-AlN passivation, the surface traps can be eliminated and corresponding to a 22.1% of current collapse with quiescent drain bias (V DSQ ) at 40 V. Furthermore, the high temperature measurement exhibited a shift-free threshold voltage (V th ), corresponding to a 40.2% of current collapse at 150 °C. The thermal stable HEMT enabled a breakdown voltage (BV) to 687 V at high temperature, promising a good thermal reliability under high power operation.

HYFIRE II: fusion/high-temperature electrolysis conceptual-design study. Annual report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fillo, J.A.

1983-08-01

As in the previous HYFIRE design study, the current study focuses on coupling a Tokamak fusion reactor with a high-temperature blanket to a High-Temperature Electrolyzer (HTE) process to produce hydrogen and oxygen. Scaling of the STARFIRE reactor to allow a blanket power to 6000 MW(th) is also assumed. The primary difference between the two studies is the maximum inlet steam temperature to the electrolyzer. This temperature is decreased from approx. 1300/sup 0/ to approx. 1150/sup 0/C, which is closer to the maximum projected temperature of the Westinghouse fuel cell design. The process flow conditions change but the basic design philosophymore » and approaches to process design remain the same as before. Westinghouse assisted in the study in the areas of systems design integration, plasma engineering, balance-of-plant design, and electrolyzer technology.« less

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prudaev, I. A., E-mail: funcelab@gmail.com; Kopyev, V. V.; Romanov, I. S.

The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results obtained during photo- and electroluminescence shows an additional (to the loss associated with Auger recombination) low-temperature loss in the high-density current region. This causes inversion of the temperature dependence of the quantum efficiency at temperatures lower than 220–300 K. Analysis shows that the loss is associated with electron leakage from the light-emitting-diode active region. The experimental data are explained using the ballistic-overflow model. The simulationmore » results are in qualitative agreement with the experimental dependences of the quantum efficiency on temperature and current density.« less

Experimental measurement of stationary SS 304, SS 316L and 8630 GTA weld pool surface temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kraus, H.G.

1989-07-01

The optical spectral radiometric/laser reflectance experimental method, previously developed by the author, was extended to obtain high-resolution surface temperature maps of stationary GTA molten weld pools using thick-plate SS 304, SS316L, and 8630 steel. Increasing the welding current from 50 to 200 A resulted in peak pool surface temperatures from 1050{sup 0} to 2400{sup 0}C for the SS 304. At a constant welding current of 150 A, the SS 304 and various heats of SS 316L and 8630 resulted in peak weld pool temperatures from 2300{sup 0} to 2700{sup 0}C. Temperature contour plots of all the welds made are given.more » Surface temperature maps are classified into types that are believed to be indicative of the convective circulation patterns present in the weld pools.« less

Angular dependence of critical current density and magnetoresistance of sputtered high-T{sub c}-films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geerkens, A.; Frenck, H.J.; Ewert, S.

1994-12-31

The angular dependence of the critical current density and the magnetoresistance of high-T{sub c}-films in high and low magnetic fields and for different temperatures were measured to investigate the flux pinning and the superconducting properties. A comparison of the results for the different superconductors shows their increasing dependence on the angle {Theta} between the magnetic field and the c-axis of the film due to the anisotropy of the chosen superconductor. Furthermore the influence of the current direction to the {Theta}-rotation plane is discussed.

Angular dependence of critical current density and magnetoresistance of sputtered high-T(sub c)-films

NASA Technical Reports Server (NTRS)

Geerkens, A.; Meven, M.; Frenck, H.-J.; Ewert, S.

1995-01-01

The angular dependence of the critical current density and the magnetoresistance of high-T(sub c)-films in high and low magnetic fields and for different temperatures were measured to investigate the flux pinning and the superconducting properties. A comparison of the results for the different superconductors shows their increasing dependence on the angle Theta between the magnetic field and the c-axis of the film due to the anisotropy of the chosen superconductor. Furthermore the influence of the current direction to the Theta-rotation plane is discussed.

[Plasma temperature calculation and coupling mechanism analysis of laser-double wire hybrid welding].

PubMed

Zheng, Kai; Li, Huan; Yang, Li-Jun; Gu, Xiao-Yan; Gao, Ying

2013-04-01

The plasma radiation of laser-double wire hybrid welding was collected by using fiber spectrometer, the coupling mechanism of arc with laser was studied through high-speed photography during welding process, and the temperature of hybrid plasma was calculated by using the method of Boltzmann plot. The results indicated that with laser hybrid, luminance was enhanced; radiation intensity became stronger; arc was attracted to the laser point; cross section contracted and arc was more stable. The laser power, welding current and arc-arc distance are important factors that have great influence on electron temperature. Increase in the laser power, amplification of welding current and reduction of arc-arc distance can all result in the rise of temperature.

No-Drag Frame for Anomalous Chiral Fluid

DOE PAGES

Stephanov, Mikhail A.; Yee, Ho-Ung

2016-03-24

For an anomalous fluid carrying dissipationless chiral magnetic and/or vortical currents we show that there is a frame in which a stationary obstacle experiences no drag, but energy and charge currents do not vanish, resembling superfluidity. Unlike ordinary superfluid flow, the anomalous chiral currents can transport entropy in this frame. Moreover, we show that the second law of thermodynamics completely determines the amounts of these anomalous nondissipative currents in the “no-drag frame” as polynomials in temperature and chemical potential with known anomaly coefficients. These general results are illustrated and confirmed by a calculation in the chiral kinetic theory and inmore » the quark-gluon plasma at high temperature.« less

Soft-phonon dynamics of the thermoelectric β-SnSe at high temperatures

NASA Astrophysics Data System (ADS)

Chatterji, Tapan; Wdowik, Urszula D.; Jagło, Grzegorz; Rols, Stéphane; Wagner, Frank R.

2018-07-01

Results of inelastic neutron scattering experiments on SnSe single crystals at high temperatures along with theoretical studies based on the density functional theory are reported. Our experiments reveal significant softening of the transverse acoustic branch along the [ 0 , ξ , 0 ] direction in the low-temperature α-SnSe of Pbnm symmetry as temperature approaches Tc = 807 K from below. This process is followed by a condensation of the zone-boundary Y-phonon of the high-temperature β-SnSe with Cmcm symmetry at the onset of phase transition. The employed theoretical approach supports experimental observations and demonstrates that the phase change in SnSe is mediated by an unstable zone-boundary phonon with the Y2+ irreducible representation within the Cmcm symmetry space group of the high-temperature β-SnSe. The present work provides a detailed understanding of the soft-mode dynamics in SnSe and conclusively shows that the α ⇌ β structural transformation in this currently topical thermoelectric material is of displacive type.

Transcriptomic study to understand thermal adaptation in a high temperature-tolerant strain of Pyropia haitanensis

PubMed Central

Wang, Wenlei; Teng, Fei; Lin, Yinghui; Ji, Dehua; Xu, Yan; Chen, Changsheng

2018-01-01

Pyropia haitanensis, a high-yield commercial seaweed in China, is currently undergoing increasing levels of high-temperature stress due to gradual global warming. The mechanisms of plant responses to high temperature stress vary with not only plant type but also the degree and duration of high temperature. To understand the mechanism underlying thermal tolerance in P. haitanensis, gene expression and regulation in response to short- and long-term temperature stresses (SHS and LHS) was investigated by performing genome-wide high-throughput transcriptomic sequencing for a high temperature tolerant strain (HTT). A total of 14,164 differential expression genes were identified to be high temperature-responsive in at least one time point by high-temperature treatment, representing 41.10% of the total number of unigenes. The present data indicated a decrease in the photosynthetic and energy metabolic rates in HTT to reduce unnecessary energy consumption, which in turn facilitated in the rapid establishment of acclimatory homeostasis in its transcriptome during SHS. On the other hand, an increase in energy consumption and antioxidant substance activity was observed with LHS, which apparently facilitates in the development of resistance against severe oxidative stress. Meanwhile, ubiquitin-mediated proteolysis, brassinosteroids, and heat shock proteins also play a vital role in HTT. The effects of SHS and LHS on the mechanism of HTT to resist heat stress were relatively different. The findings may facilitate further studies on gene discovery and the molecular mechanisms underlying high-temperature tolerance in P. haitanensis, as well as allow improvement of breeding schemes for high temperature-tolerant macroalgae that can resist global warming. PMID:29694388

Transcriptomic study to understand thermal adaptation in a high temperature-tolerant strain of Pyropia haitanensis.

PubMed

Wang, Wenlei; Teng, Fei; Lin, Yinghui; Ji, Dehua; Xu, Yan; Chen, Changsheng; Xie, Chaotian

2018-01-01

Pyropia haitanensis, a high-yield commercial seaweed in China, is currently undergoing increasing levels of high-temperature stress due to gradual global warming. The mechanisms of plant responses to high temperature stress vary with not only plant type but also the degree and duration of high temperature. To understand the mechanism underlying thermal tolerance in P. haitanensis, gene expression and regulation in response to short- and long-term temperature stresses (SHS and LHS) was investigated by performing genome-wide high-throughput transcriptomic sequencing for a high temperature tolerant strain (HTT). A total of 14,164 differential expression genes were identified to be high temperature-responsive in at least one time point by high-temperature treatment, representing 41.10% of the total number of unigenes. The present data indicated a decrease in the photosynthetic and energy metabolic rates in HTT to reduce unnecessary energy consumption, which in turn facilitated in the rapid establishment of acclimatory homeostasis in its transcriptome during SHS. On the other hand, an increase in energy consumption and antioxidant substance activity was observed with LHS, which apparently facilitates in the development of resistance against severe oxidative stress. Meanwhile, ubiquitin-mediated proteolysis, brassinosteroids, and heat shock proteins also play a vital role in HTT. The effects of SHS and LHS on the mechanism of HTT to resist heat stress were relatively different. The findings may facilitate further studies on gene discovery and the molecular mechanisms underlying high-temperature tolerance in P. haitanensis, as well as allow improvement of breeding schemes for high temperature-tolerant macroalgae that can resist global warming.

Interaction of high voltage surfaces with the space plasma

NASA Technical Reports Server (NTRS)

Kaufman, H. R.; Robinson, R. S.

1980-01-01

High voltage solar arrays provide spacecraft power while optimizing mass and power efficiency. Operating such arrays in the space plasma environment can result in anomalously large currents being collected through insulation defects. Two thicknesses of the insulating material were tested, with no effect found due to insulator thickness. In these tests the polyimide thickness was always much less than the pinhole diameter. The pinhole area was varied over an area range of more than 30:1. It was found that the current collected was independent of the pinhole area for hole diameters from 0.35 to 2.0 mm. Two types of adhesives were tried in two different configurations. The adhesives were chosen for their extreme difference in vacuum qualifications. Neither adhesive types nor configuration made a significant difference in current collection. The temperature of the insulating material was also varied. It was found that current collection decreased with increasing temperature. Tests were conducted to see if pinhole current collection decreased with time, as was indicated by the effects of several short tests. Current was collected for over four hours while the conductor potential was held constant at 1000 volts. A smooth decrease with time was not observed, but rather a roughly constant current collection with brief surges to high values. Tests were also conducted with the simulated solar cell biased negative. The current was found to be proportional to pinhole area.

Effects of temperature and gas-liquid mass transfer on the operation of small electrochemical cells for the quantitative evaluation of CO2 reduction electrocatalysts.

PubMed

Lobaccaro, Peter; Singh, Meenesh R; Clark, Ezra Lee; Kwon, Youngkook; Bell, Alexis T; Ager, Joel W

2016-09-29

In the last few years, there has been increased interest in electrochemical CO 2 reduction (CO2R). Many experimental studies employ a membrane separated, electrochemical cell with a mini H-cell geometry to characterize CO2R catalysts in aqueous solution. This type of electrochemical cell is a mini-chemical reactor and it is important to monitor the reaction conditions within the reactor to ensure that they are constant throughout the study. We show that operating cells with high catalyst surface area to electrolyte volume ratios (S/V) at high current densities can have subtle consequences due to the complexity of the physical phenomena taking place on electrode surfaces during CO2R, particularly as they relate to the cell temperature and bulk electrolyte CO 2 concentration. Both effects were evaluated quantitatively in high S/V cells using Cu electrodes and a bicarbonate buffer electrolyte. Electrolyte temperature is a function of the current/total voltage passed through the cell and the cell geometry. Even at a very high current density, 20 mA cm -2 , the temperature increase was less than 4 °C and a decrease of <10% in the dissolved CO 2 concentration is predicted. In contrast, limits on the CO 2 gas-liquid mass transfer into the cells produce much larger effects. By using the pH in the cell to measure the CO 2 concentration, significant undersaturation of CO 2 is observed in the bulk electrolyte, even at more modest current densities of 10 mA cm -2 . Undersaturation of CO 2 produces large changes in the faradaic efficiency observed on Cu electrodes, with H 2 production becoming increasingly favored. We show that the size of the CO 2 bubbles being introduced into the cell is critical for maintaining the equilibrium CO 2 concentration in the electrolyte, and we have designed a high S/V cell that is able to maintain the near-equilibrium CO 2 concentration at current densities up to 15 mA cm -2 .

Effects of temperature and gas–liquid mass transfer on the operation of small electrochemical cells for the quantitative evaluation of CO 2 reduction electrocatalysts

DOE PAGES

Lobaccaro, Peter; Singh, Meenesh R.; Clark, Ezra Lee; ...

2016-09-06

In the last few years, there has been increased interest in electrochemical CO 2 reduction (CO2R). Many experimental studies employ a membrane separated, electrochemical cell with a mini H-cell geometry to characterize CO2R catalysts in aqueous solution. This type of electrochemical cell is a mini-chemical reactor and it is important to monitor the reaction conditions within the reactor to ensure that they are constant throughout the study. Here we show that operating cells with high catalyst surface area to electrolyte volume ratios (S/V) at high current densities can have subtle consequences due to the complexity of the physical phenomena takingmore » place on electrode surfaces during CO2R, particularly as they relate to the cell temperature and bulk electrolyte CO 2 concentration. Both effects were evaluated quantitatively in high S/V cells using Cu electrodes and a bicarbonate buffer electrolyte. Electrolyte temperature is a function of the current/total voltage passed through the cell and the cell geometry. Even at a very high current density, 20 mA cm -2 , the temperature increase was less than 4 °C and a decrease of < 10% in the dissolved CO 2 concentration is predicted. In contrast, limits on the CO 2 gas-liquid mass transfer into the cells produce much larger effects. By using the pH in the cell to measure the CO 2 concentration, significant undersaturation of CO 2 is observed in the bulk electrolyte, even at more modest current densities of 10 mA cm -2 . Undersaturation of CO 2 produces large changes in the faradaic efficiency observed on Cu electrodes, with H 2 production becoming increasingly favored. Finally, we show that the size of the CO 2 bubbles being introduced into the cell is critical for maintaining the equilibrium CO 2 concentration in the electrolyte, and we have designed a high S/V cell that is able to maintain the near-equilibrium CO 2 concentration at current densities up to 15 mA cm -2.« less

Effects of temperature and gas–liquid mass transfer on the operation of small electrochemical cells for the quantitative evaluation of CO 2 reduction electrocatalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobaccaro, Peter; Singh, Meenesh R.; Clark, Ezra Lee

In the last few years, there has been increased interest in electrochemical CO 2 reduction (CO2R). Many experimental studies employ a membrane separated, electrochemical cell with a mini H-cell geometry to characterize CO2R catalysts in aqueous solution. This type of electrochemical cell is a mini-chemical reactor and it is important to monitor the reaction conditions within the reactor to ensure that they are constant throughout the study. Here we show that operating cells with high catalyst surface area to electrolyte volume ratios (S/V) at high current densities can have subtle consequences due to the complexity of the physical phenomena takingmore » place on electrode surfaces during CO2R, particularly as they relate to the cell temperature and bulk electrolyte CO 2 concentration. Both effects were evaluated quantitatively in high S/V cells using Cu electrodes and a bicarbonate buffer electrolyte. Electrolyte temperature is a function of the current/total voltage passed through the cell and the cell geometry. Even at a very high current density, 20 mA cm -2 , the temperature increase was less than 4 °C and a decrease of < 10% in the dissolved CO 2 concentration is predicted. In contrast, limits on the CO 2 gas-liquid mass transfer into the cells produce much larger effects. By using the pH in the cell to measure the CO 2 concentration, significant undersaturation of CO 2 is observed in the bulk electrolyte, even at more modest current densities of 10 mA cm -2 . Undersaturation of CO 2 produces large changes in the faradaic efficiency observed on Cu electrodes, with H 2 production becoming increasingly favored. Finally, we show that the size of the CO 2 bubbles being introduced into the cell is critical for maintaining the equilibrium CO 2 concentration in the electrolyte, and we have designed a high S/V cell that is able to maintain the near-equilibrium CO 2 concentration at current densities up to 15 mA cm -2.« less

Solar Array at Very High Temperatures: Ground Tests

NASA Technical Reports Server (NTRS)

Vayner, Boris

2016-01-01

Solar array design for any spacecraft is determined by the orbit parameters. For example, operational voltage for spacecraft in Low Earth Orbit (LEO) is limited by significant differential charging due to interactions with low temperature plasma. In order to avoid arcing in LEO, solar array is designed to generate electrical power at comparatively low voltages (below 100 V) or to operate at higher voltages with encapsulated of all suspected discharge locations. In Geosynchronous Orbit (GEO) differential charging is caused by energetic electrons that produce differential potential between coverglass and conductive spacecraft body in a kilovolt range. In such a case, weakly conductive layer over coverglass (ITO) is one of possible measures to eliminate dangerous discharges on array surface. Temperature variations for solar arrays in both orbits are measured and documented within the range of -150 C +110 C. This wide interval of operational temperatures is regularly reproduced in ground tests with radiative heating and cooling inside shroud with flowing liquid nitrogen. The requirements to solar array design and tests turn out to be more complicated when planned trajectory crosses these two orbits and goes closer to Sun. Conductive layer over coverglass causes sharp increase in parasitic current collected from LEO plasma, high temperature may cause cracks in encapsulating material (RTV), radiative heating of coupon in vacuum chamber becomes practically impossible above 150 C, conductivities of glass and adhesive go up with temperature that decrease array efficiency, and mechanical stresses grow up to critical magnitudes. A few test arrangements and respective results are presented in current paper. Coupons were tested against arcing in simulated LEO and GEO environments under elevated temperatures up to 200 C. The dependence of leakage current on temperature was measured, and electrostatic cleanness was verified for coupons with antireflection (AR) coating over ITO layer.

Development of self-powered wireless high temperature electrochemical sensor for in situ corrosion monitoring of coal-fired power plant.

PubMed

Aung, Naing Naing; Crowe, Edward; Liu, Xingbo

2015-03-01

Reliable wireless high temperature electrochemical sensor technology is needed to provide in situ corrosion information for optimal predictive maintenance to ensure a high level of operational effectiveness under the harsh conditions present in coal-fired power generation systems. This research highlights the effectiveness of our novel high temperature electrochemical sensor for in situ coal ash hot corrosion monitoring in combination with the application of wireless communication and an energy harvesting thermoelectric generator (TEG). This self-powered sensor demonstrates the successful wireless transmission of both corrosion potential and corrosion current signals to a simulated control room environment. Copyright © 2014 ISA. All rights reserved.

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

DOEpatents

Kaschmitter, J.L.; Sigmon, T.W.

1995-10-10

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby the amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenation can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon

DOEpatents

Kaschmitter, James L.; Sigmon, Thomas W.

1995-01-01

A process for producing multi-terminal devices such as solar cells wherein a pulsed high energy source is used to melt and crystallize amorphous silicon deposited on a substrate which is intolerant to high processing temperatures, whereby to amorphous silicon is converted into a microcrystalline/polycrystalline phase. Dopant and hydrogenization can be added during the fabrication process which provides for fabrication of extremely planar, ultra shallow contacts which results in reduction of non-current collecting contact volume. The use of the pulsed energy beams results in the ability to fabricate high efficiency microcrystalline/polycrystalline solar cells on the so-called low-temperature, inexpensive plastic substrates which are intolerant to high processing temperatures.

Advanced Capacitor with SiC for High Temperature Applications

NASA Astrophysics Data System (ADS)

Tsao, B. H.; Ramalingam, M. L.; Bhattacharya, R. S.; Carr, Sandra Fries

1994-07-01

An advanced capacitor using SiC as the dielectric material has been developed for high temperature, high power, and high density electronic components for aircraft and aerospace application. The conventional capacitor consists of a large number of metallized polysulfone films that are arranged in parallel and enclosed in a sealed metal case. However, problems with electrical failure, thermal failure, and dielectric flow were experienced by Air Force suppliers for the component and subsystem for lack of suitable properties of the dielectric material. The high breakdown electrical field, high thermal conductivity, and high temperature operational resistance of SiC compared to similar properties of the conventional ceramic and polymer capacitor would make it a better choice for a high temperature, and high power capacitor. The quality of the SiC film was evaluated. The electrical parameters, such as the capacitance, dissipation factor, equivalent series resistance, and dielectric withstand voltage, were evaluated. The prototypical capacitors are currently being fabricated using SiC film.

Powering of an HTS dipole insert-magnet operated standalone in helium gas between 5 and 85 K

NASA Astrophysics Data System (ADS)

van Nugteren, J.; Kirby, G.; Bajas, H.; Bajko, M.; Ballarino, A.; Bottura, L.; Chiuchiolo, A.; Contat, P.-A.; Dhallé, M.; Durante, M.; Fazilleau, P.; Fontalva, A.; Gao, P.; Goldacker, W.; ten Kate, H.; Kario, A.; Lahtinen, V.; Lorin, C.; Markelov, A.; Mazet, J.; Molodyk, A.; Murtomäki, J.; Long, N.; Perez, J.; Petrone, C.; Pincot, F.; de Rijk, G.; Rossi, L.; Russenschuck, S.; Ruuskanen, J.; Schmitz, K.; Stenvall, A.; Usoskin, A.; Willering, G.; Yang, Y.

2018-06-01

This paper describes the standalone magnet cold testing of the high temperature superconducting (HTS) magnet Feather-M2.1-2. This magnet was constructed within the European funded FP7-EUCARD2 collaboration to test a Roebel type HTS cable, and is one of the first high temperature superconducting dipole magnets in the world. The magnet was operated in forced flow helium gas with temperatures ranging between 5 and 85 K. During the tests a magnetic dipole field of 3.1 T was reached inside the aperture at a current of 6.5 kA and a temperature of 5.7 K. These values are in agreement with the self-field critical current of the used SuperOx cable assembled with Sunam tapes (low-performance batch), thereby confirming that no degradation occurred during winding, impregnation, assembly and cool-down of the magnet. The magnet was quenched many tens of times by ramping over the critical current and no degradation nor training was evident. During the tests the voltage over the coil was monitored in the microvolt range. An inductive cancellation wire was used to remove the inductive component, thereby significantly reducing noise levels. Close to the quench current, drift was detected both in temperature and voltage over the coil. This drifting happens in a time scale of minutes and is a clear indication that the magnet has reached its limit. All quenches happened approximately at the same average electric field and thus none of the quenches occurred unexpectedly.

Xenon gas field ion source from a single-atom tip

NASA Astrophysics Data System (ADS)

Lai, Wei-Chiao; Lin, Chun-Yueh; Chang, Wei-Tse; Li, Po-Chang; Fu, Tsu-Yi; Chang, Chia-Seng; Tsong, T. T.; Hwang, Ing-Shouh

2017-06-01

Focused ion beam (FIB) systems have become powerful diagnostic and modification tools for nanoscience and nanotechnology. Gas field ion sources (GFISs) built from atomic-size emitters offer the highest brightness among all ion sources and thus can improve the spatial resolution of FIB systems. Here we show that the Ir/W(111) single-atom tip (SAT) can emit high-brightness Xe+ ion beams with a high current stability. The ion emission current versus extraction voltage was analyzed from 150 K up to 309 K. The optimal emitter temperature for maximum Xe+ ion emission was ˜150 K and the reduced brightness at the Xe gas pressure of 1 × 10-4 torr is two to three orders of magnitude higher than that of a Ga liquid metal ion source, and four to five orders of magnitude higher than that of a Xe inductively coupled plasma ion source. Most surprisingly, the SAT emitter remained stable even when operated at 309 K. Even though the ion current decreased with increasing temperature, the current at room temperature (RT) could still reach over 1 pA when the gas pressure was higher than 1 × 10-3 torr, indicating the feasibility of RT-Xe-GFIS for application to FIB systems. The operation temperature of Xe-SAT-GFIS is considerably higher than the cryogenic temperature required for the helium ion microscope (HIM), which offers great technical advantages because only simple or no cooling schemes can be adopted. Thus, Xe-GFIS-FIB would be easy to implement and may become a powerful tool for nanoscale milling and secondary ion mass spectroscopy.

Heart rate reveals torpor at high body temperatures in lowland tropical free-tailed bats.

PubMed

O'Mara, M Teague; Rikker, Sebastian; Wikelski, Martin; Ter Maat, Andries; Pollock, Henry S; Dechmann, Dina K N

2017-12-01

Reduction in metabolic rate and body temperature is a common strategy for small endotherms to save energy. The daily reduction in metabolic rate and heterothermy, or torpor, is particularly pronounced in regions with a large variation in daily ambient temperature. This applies most strongly in temperate bat species (order Chiroptera), but it is less clear how tropical bats save energy if ambient temperatures remain high. However, many subtropical and tropical species use some daily heterothermy on cool days. We recorded the heart rate and the body temperature of free-ranging Pallas' mastiff bats ( Molossus molossus ) in Gamboa, Panamá, and showed that these individuals have low field metabolic rates across a wide range of body temperatures that conform to high ambient temperature. Importantly, low metabolic rates in controlled respirometry trials were best predicted by heart rate, and not body temperature . Molossus molossus enter torpor-like states characterized by low metabolic rate and heart rates at body temperatures of 32°C, and thermoconform across a range of temperatures. Flexible metabolic strategies may be far more common in tropical endotherms than currently known.

Heart rate reveals torpor at high body temperatures in lowland tropical free-tailed bats

PubMed Central

Rikker, Sebastian; Wikelski, Martin; Ter Maat, Andries

2017-01-01

Reduction in metabolic rate and body temperature is a common strategy for small endotherms to save energy. The daily reduction in metabolic rate and heterothermy, or torpor, is particularly pronounced in regions with a large variation in daily ambient temperature. This applies most strongly in temperate bat species (order Chiroptera), but it is less clear how tropical bats save energy if ambient temperatures remain high. However, many subtropical and tropical species use some daily heterothermy on cool days. We recorded the heart rate and the body temperature of free-ranging Pallas' mastiff bats (Molossus molossus) in Gamboa, Panamá, and showed that these individuals have low field metabolic rates across a wide range of body temperatures that conform to high ambient temperature. Importantly, low metabolic rates in controlled respirometry trials were best predicted by heart rate, and not body temperature. Molossus molossus enter torpor-like states characterized by low metabolic rate and heart rates at body temperatures of 32°C, and thermoconform across a range of temperatures. Flexible metabolic strategies may be far more common in tropical endotherms than currently known. PMID:29308259

The modulation of oxygen vacancies by the combined current effect and temperature cycling in La0.7Sr0.3CoO3 film

NASA Astrophysics Data System (ADS)

Li, J.; Wang, J.; Kuang, H.; Zhao, Y. Y.; Qiao, K. M.; Liu, Y.; Hu, F. X.; Sun, J. R.; Shen, B. G.

2018-05-01

Modulating the oxygen defect concentration has been accepted as an effective method to obtain high catalytic activity in perovskite cobaltites. However, controllably modifying the oxygen vacancy is still a challenge in this type of materials, which strongly obstructs their application. Here, we report a successful oxygen vacancies modulation in the La0.7Sr0.3CoO3 (LSCO) film by using combined current effect and temperature cycling. The temperature dependent transport properties of the LSCO/LAO film were investigated. The results revealed that the resistance of the film keeps increasing under the repeated measurements. It was found that the accumulation of the oxygen vacancy by current effect transforms the Co4+ ion into Co3+ ion, which results in the enhancement of the resistance and thus the transport switching behavior. Moreover, the resistance in the cooling process was found to be much higher than that in previous cooling and heating processes, which indicates that the oxygen escapes more quickly in the high temperature region. On the other hand, our analysis indicates that the CoO6 distortion may contribute to the switching of transport behaviors in the low temperature region. Our work provides an effective and controllable way to modulate oxygen defect in the perovskite-type oxides.

MODIS Global Sea Surface Temperature

NASA Technical Reports Server (NTRS)

2002-01-01

Every day the Moderate-resolution Imaging Spectroradiometer (MODIS) measures sea surface temperature over the entire globe with high accuracy. This false-color image shows a one-month composite for May 2001. Red and yellow indicates warmer temperatures, green is an intermediate value, while blues and then purples are progressively colder values. The new MODIS sea surface temperature product will be particularly useful in studies of temperature anomalies, such as El Nino, as well as research into how air-sea interactions drive changes in weather and climate patterns. In the high resolution image, notice the amazing detail in some of the regional current patterns. For instance, notice the cold water currents that move from Antarctica northward along South America's west coast. These cold, deep waters upwell along an equatorial swath around and to the west of the Galapagos Islands. Note the warm, wide currents of the Gulf Stream moving up the United States' east coast, carrying Caribbean warmth toward Newfoundland and across the Atlantic toward Western Europe. Note the warm tongue of water extending from Africa's east coast to well south of the Cape of Good Hope. MODIS was launched in December 1999 aboard NASA's Terra satellite. For more details on this and other MODIS data products, please see NASA Unveils Spectacular Suite of New Global Data Products from MODIS. Image courtesy MODIS Ocean Group, NASA GSFC, and the University of Miami

DWPF STARTUP FRIT VISCOSITY MEASUREMENT ROUND ROBIN RESULTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crum, Jarrod V.; Edwards, Tommy B.; Russell, Renee L.

2012-07-31

A viscosity standard is needed to replace the National Institute of Standards and Technology (NIST) glasses currently being used to calibrate viscosity measurement equipment. The current NIST glasses are either unavailable or less than ideal for calibrating equipment to measure the viscosity of high-level waste glasses. This report documents the results of a viscosity round robin study conducted on the Defense Waste Processing Facility (DWPF) startup frit. DWPF startup frit was selected because its viscosity-temperature relationship is similar to most DWPF and Hanford high-level waste glass compositions. The glass underwent grinding and blending to homogenize the large (100 lb) batch.more » Portions of the batch were supplied to the laboratories (named A through H) for viscosity measurements following a specified temperature schedule with a temperature range of 1150 C to 950 C and with an option to measure viscosity at lower temperatures if their equipment was capable of measuring at the higher viscosities. Results were used to fit the Vogel-Tamman-Fulcher and Arrhenius equations to viscosity as a function of temperature for the entire temperature range of 460 C through 1250 C as well as the limited temperature interval of approximately 950 C through 1250 C. The standard errors for confidence and prediction were determined for the fitted models.« less

Design of conduction cooling system for a high current HTS DC reactor

NASA Astrophysics Data System (ADS)

Dao, Van Quan; Kim, Taekue; Le Tat, Thang; Sung, Haejin; Choi, Jongho; Kim, Kwangmin; Hwang, Chul-Sang; Park, Minwon; Yu, In-Keun

2017-07-01

A DC reactor using a high temperature superconducting (HTS) magnet reduces the reactor’s size, weight, flux leakage, and electrical losses. An HTS magnet needs cryogenic cooling to achieve and maintain its superconducting state. There are two methods for doing this: one is pool boiling and the other is conduction cooling. The conduction cooling method is more effective than the pool boiling method in terms of smaller size and lighter weight. This paper discusses a design of conduction cooling system for a high current, high temperature superconducting DC reactor. Dimensions of the conduction cooling system parts including HTS magnets, bobbin structures, current leads, support bars, and thermal exchangers were calculated and drawn using a 3D CAD program. A finite element method model was built for determining the optimal design parameters and analyzing the thermo-mechanical characteristics. The operating current and inductance of the reactor magnet were 1,500 A, 400 mH, respectively. The thermal load of the HTS DC reactor was analyzed for determining the cooling capacity of the cryo-cooler. The study results can be effectively utilized for the design and fabrication of a commercial HTS DC reactor.

Fiber reinforced superalloys for rocket engines

NASA Technical Reports Server (NTRS)

Petrasek, Donald W.; Stephens, Joseph R.

1989-01-01

High pressure turbopumps for advanced reusable liquid propellant rocket engines such as that for the Space Shuttle Main Engine (SSME) require turbine blade materials that operate under extreme conditions of temperature, hydrogen environment, high-cycle fatigue loading, thermal fatigue and thermal shock. Such requirements tax the capabilities of current blade materials. Based on projections of properties for tungsten fiber reinforced superalloy (FRS) composites, it was concluded that FRS turbine blades offer the potential of a several fold increase in life and over a 200 C increase in temperature capability over the current SSME blade material. FRS composites were evaluated with respect to mechanical property requirements for SSME blade applications. Compared to the current blade material, the thermal shock resistance of FRS materials is excellent, two to nine times better, and their thermal fatigue resistance is equal to or higher than the current blade material. FRS materials had excellent low and high-cycle fatigue strengths, and thermal shock-induced surface microcracks had no influence on their fatigue strength. The material also exhibited negligible embrittlement when exposed to a hydrogen environment.

Fiber reinforced superalloys for rocket engines

NASA Technical Reports Server (NTRS)

Petrasek, Donald W.; Stephens, Joseph R.

1988-01-01

High-pressure turbopumps for advanced reusable liquid-propellant rocket engines such as that for the Space Shuttle Main Engine (SSME) require turbine blade materials that operate under extreme conditions of temperature, hydrogen environment, high-cycle fatigue loading, thermal fatigue and thermal shock. Such requirements tax the capabilities of current blade materials. Based on projections of properties for tungsten fiber reinforced superalloy (FRS) composites, it was concluded that FRS turbine blades offer the potential of a several-fold increase in life and over a 200C increase in temperature capability over current SSME blade material. FRS composites were evaluated with respect to mechanical property requirements for SSME blade applications. Compared to the current blade material, the thermal shock resistance of FRS materials is excellent, two to nine times better, and their thermal fatigue resistance is equal to or higher than the current blade material. FRS materials had excellent low and high-cycle fatigue strengths, and thermal shock-induced surface microcracks had no influence on their fatigue strength. The material also exhibited negligible embrittlement when exposed to a hydrogen environment.

Application of hydrometallurgy techniques in quartz processing and purification: a review

NASA Astrophysics Data System (ADS)

Lin, Min; Lei, Shaomin; Pei, Zhenyu; Liu, Yuanyuan; Xia, Zhangjie; Xie, Feixiang

2018-04-01

Although there have been numerous studies on separation and purification of metallic minerals by hydrometallurgy techniques, applications of the chemical techniques in separation and purification of non-metallic minerals are rarely reported. This paper reviews disparate areas of study into processing and purification of quartz (typical non-metallic ore) in an attempt to summarize current work, as well as to suggest potential for future consolidation in the field. The review encompasses chemical techniques of the quartz processing including situations, progresses, leaching mechanism, scopes of application, advantages and drawbacks of micro-bioleaching, high temperature leaching, high temperature pressure leaching and catalyzed high temperature pressure leaching. Traditional leaching techniques including micro-bioleaching and high temperature leaching are unequal to demand of modern glass industry for quality of quartz concentrate because the quartz products has to be further processed. High temperature pressure leaching and catalyzed high temperature pressure leaching provide new ways to produce high-grade quartz sand with only one process and lower acid consumption. Furthermore, the catalyzed high temperature pressure leaching realizes effective purification of quartz with extremely low acid consumption (no using HF or any fluoride). It is proposed that, by integrating the different chemical processes of quartz processing and expounding leaching mechanisms and scopes of application, the research field as a monopolized industry would benefit.

Helium (3) Rich Solar Flares

DOE R&D Accomplishments Database

Colgate, S. A.; Audouze, J.; Fowler, W. A.

1977-05-03

The extreme enrichment of {sup 3} He {sup 4} He greater than or equal to 1 in some solar flares as due to spallation and the subsequent confinement of the products in a high temperature, kT approx. = 200 keV, high density, n{sub e} approx. = 3 x 10{sup 15} cm {sup -3} plasma associated with the magnetic instability producing the flare is interpreted. The pinch or filament is a current of high energy protons that creates the spallation and maintains the temperature that produces the high energy x-ray spectrum and depletes other isotopes D, Li, Be, and B as observed. Finally the high temperature plasma is a uniquely efficient spallation target that is powered by the interaction of stellar convection and self generated magnetic field.

A study of enhancing critical current densities (J(sub c)) and critical temperature (T(sub c)) of high-temperature superconductors

NASA Technical Reports Server (NTRS)

Vlasse, Marcus

1992-01-01

The development of pure phase 123 and Bi-based 2223 superconductors has been optimized. The pre-heat processing appears to be a very important parameter in achieving optimal physical properties. The synthesis of pure phases in the Bi-based system involves effects due to oxygen partial pressure, time, and temperature. Orientation/melt-sintering effects include the extreme c-axis orientation of Yttrium 123 and Bismuth 2223, 2212, and 2201 phases. This orientation is conductive to increasing critical currents. A procedure was established to substitute Sr for Ba in Y-123 single crystals.

A temperature controller board for the ARC controller

NASA Astrophysics Data System (ADS)

Tulloch, Simon

2016-07-01

A high-performance temperature controller board has been produced for the ARC Generation-3 CCD controller. It contains two 9W temperature servo loops and four temperature input channels and is fully programmable via the ARC API and OWL data acquisition program. PI-loop control is implemented in an on-board micro. Both diode and RTD sensors can be used. Control and telemetry data is sent via the ARC backplane although a USB-2 interface is also available. Further functionality includes hardware timers and high current drivers for external shutters and calibration LEDs, an LCD display, a parallel i/o port, a pressure sensor interface and an uncommitted analogue telemetry input.

Possibility of high temperature superconducting phases in PdH

NASA Astrophysics Data System (ADS)

Tripodi, Paolo; Di Gioacchino, Daniele; Borelli, Rodolfo; Vinko, Jenny Darja

2003-05-01

Possible new superconducting phases with a high critical transition temperature (Tc) have been found in stable palladium-hydrogen (PdHx) samples for stoichiometric ratio x=H/Pd⩾1, in addition to the well-known low critical transition temperature (0⩽Tc⩽9) when x is in the range (0.75⩽x⩽1.00). Possible new measured superconducting phases with critical temperature in the range 51⩽Tc⩽295 K occur. This Tc varies considerably with every milli part of x when x exceeds unit. A superconducting critical current density Jc⩾6.1×104 A cm-2 has been measured at 77 K with HDC=0 T.

Operation of a test bed axial-gap brushless dc rotor with a superconducting stator

DOE Office of Scientific and Technical Information (OSTI.GOV)

McKeever, J.W.; Sohns, C.W.; Schwenterly, S.W.

1993-08-01

A variable-speed axial-gap motor with a stator consisting of four liquid helium cooled superconducting electromagnets (two pole pairs) was built and proof tested up to 608 rpm in November 1990 as a tool for joint industry-laboratory evaluation of coils fabricated from high-temperature oxide superconductors. A second rotor was fabricated with improved materia winding configuration, and wire type, and the drive system was modified to eliminate current spiking. The modified motor was characterized to design speed, 188 rad/s (1800 rpm), to acquire a performance baseline for future comparison with that of high-temperature superconducting (HIS) wire. As it becomes commercially available, HTSmore » wire will replace the low-temperature electromagnet wire in a stator modified to control wire temperatures between 4 K and 77 K. Measurements of the superconducting electromagnetic field and locked rotor torque as functions of cryocurrent and dc current through two phases of the rotor, respectively, provided data to estimate power that could be developed by the rotor. Back emf and parasitic mechanical and electromagnetic drag torques were measured as functions of angular velocity to calculate actual rotor power developed and to quantify losses, which reduce the motor`s efficiency. A detailed measurement of motor power at design speed confirmed the developed power equation. When subsequently operated at the 33-A maximum available rotor current, the motor delivered 15.3 kill (20.5 hp) to the load. In a final test, the cryostat was operated at 2500 A, 200 A below its critical current. At rotor design current of 60 A and 2500 A stator current, the extrapolated developed power would be 44.2 kill (59.2 hp) with 94% efficiency.« less

Affordable Manufacturing Technologies Being Developed for Actively Cooled Ceramic Components

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.

1999-01-01

Efforts to improve the performance of modern gas turbine engines have imposed increasing service temperature demands on structural materials. Through active cooling, the useful temperature range of nickel-base superalloys in current gas turbine engines has been extended, but the margin for further improvement appears modest. Because of their low density, high-temperature strength, and high thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, high processing costs have proven to be a major obstacle to their widespread application. Advanced rapid prototyping technology, which is developing rapidly, offers the possibility of an affordable manufacturing approach.

Dynamic Field and Current Distributions in Multifilamentary YBa2Cu3O7-delta Thin Films with Magnetic Coupling (POSTPRINT)

DTIC Science & Technology

2010-03-01

INTRODUCTION The separation of high-temperature superconducting HTS tapes into filaments is a viable approach to reduce ac and hysteretic losses in...generation HTS coated conductors. However, ac losses of finely striated tapes can still be larger than desired as predicted by analytical expressions.6...necessitates an in-depth understanding of the flux and current dynamics in multifilamentary HTS structures as both depend strongly on temperature and history of

Efficient room-temperature near-infrared detection with solution-processed networked single wall carbon nanotube field effect transistors.

PubMed

Hwang, Ihn; Jung, Hee June; Cho, Sung Hwan; Jo, Seong Soon; Choi, Yeon Sik; Sung, Ji Ho; Choi, Jae Ho; Jo, Moon Ho; Park, Cheolmin

2014-02-26

Efficient room temperature NIR detection with sufficient current gain is made with a solution-processed networked SWNT FET. The high performance NIR-FET with significantly enhanced photocurrent by more than two orders of magnitude compared to dark current in the depleted state is attributed to multiple Schottky barriers in the network, each of which absorb NIR and effectively separate photocarriers to corresponding electrodes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electro optical system to measure strains at high temperature

NASA Technical Reports Server (NTRS)

Sciammarella, Cesar A.

1991-01-01

The measurement of strains at temperatures of the order of 1000 C has become a very important field of research. Technological advances in areas such as the analysis of high speed aircraft structures and high efficiency thermal engines require operational temperatures of this order of magnitude. Current techniques for the measurement of strains, such as electrical strain gages, are at the limit of their useful range and new methods need to be developed. Optical techniques are very attractive in this type of application because of their noncontacting nature. Holography is of particular interest because a minimal preparation of the surfaces is required. Optoelectronics holography is specially suited for this type of application, from the point of view of industrial use. There are a number of technical problems that need to be overcome to measure strains using holographic interferometry at high temperatures. Some of these problems are discussed, and solutions are given. A specimen instrumented with high temperature strains gages is used to compare the results of both technologies.

Electro optical system to measure strains at high temperature

NASA Astrophysics Data System (ADS)

Sciammarella, Cesar A.

1991-12-01

The measurement of strains at temperatures of the order of 1000 C has become a very important field of research. Technological advances in areas such as the analysis of high speed aircraft structures and high efficiency thermal engines require operational temperatures of this order of magnitude. Current techniques for the measurement of strains, such as electrical strain gages, are at the limit of their useful range and new methods need to be developed. Optical techniques are very attractive in this type of application because of their noncontacting nature. Holography is of particular interest because a minimal preparation of the surfaces is required. Optoelectronics holography is specially suited for this type of application, from the point of view of industrial use. There are a number of technical problems that need to be overcome to measure strains using holographic interferometry at high temperatures. Some of these problems are discussed, and solutions are given. A specimen instrumented with high temperature strains gages is used to compare the results of both technologies.

In operando neutron diffraction study of the temperature and current rate-dependent phase evolution of LiFePO4 in a commercial battery

NASA Astrophysics Data System (ADS)

Sharma, N.; Yu, D. H.; Zhu, Y.; Wu, Y.; Peterson, V. K.

2017-02-01

In operando NPD data of electrodes in lithium-ion batteries reveal unusual LiFePO4 phase evolution after the application of a thermal step and at high current. At low current under ambient conditions the LiFePO4 to FePO4 two-phase reaction occurs during the charge process, however, following a thermal step and at higher current this reaction appears at the end of charge and continues into the next electrochemical step. The same behavior is observed for the FePO4 to LiFePO4 transition, occurring at the end of discharge and continuing into the following electrochemical step. This suggests that the bulk (or the majority of the) electrode transformation is dependent on the battery's history, current, or temperature. Such information concerning the non-equilibrium evolution of an electrode allows a direct link between the electrode's functional mechanism that underpins lithium-ion battery behavior and the real-life operating conditions of the battery, such as variable temperature and current, to be made.

Influences of urban fabric on pyroclastic density currents at Pompeii (Italy): 2. Temperature of the deposits and hazard implications

NASA Astrophysics Data System (ADS)

Zanella, E.; Gurioli, L.; Pareschi, M. T.; Lanza, R.

2007-05-01

During the A.D. 79 eruption of Vesuvius, Italy, the Roman town of Pompeii was covered by 2.5 m of pyroclastic fall pumice and then partially destroyed by pyroclastic density currents (PDCs). Thermal remanent magnetization measurements performed on the lithic and roof tile fragments embedded in the PDC deposits allow us to quantify the variations in the temperature (Tdep) of the deposits within and around Pompeii. These results reveal that the presence of buildings strongly influenced the deposition temperature of the erupted products. The first two currents, which entered Pompeii at a temperature around 300-360°C, show drastic decreases in the Tdep, with minima of 100-140°C, found in the deposits within the town. We interpret these decreases in temperature as being the result of localized interactions between the PDCs and the city structures, which were only able to affect the lower part of the currents. Down flow of Pompeii, the lowermost portion of the PDCs regained its original physical characteristics, emplacing hot deposits once more. The final, dilute PDCs entered a town that was already partially destroyed by the previous currents. These PDCs left thin ash deposits, which mantled the previous ones. The lack of interaction with the urban fabric is indicated by their uniform temperature everywhere. However, the relatively high temperature of the deposits, between 140 and 300°C, indicates that even these distal, thin ash layers, capped by their accretionary lapilli bed, were associated with PDCs that were still hot enough to cause problems for unsheltered people.

Comparison study of cable geometries and superconducting tape layouts for high-temperature superconductor cables

NASA Astrophysics Data System (ADS)

Ta, Wurui; Shao, Tianchong; Gao, Yuanwen

2018-04-01

High-temperature superconductor (HTS) rare-earth-barium-copper-oxide (REBCO) tapes are very promising for use in high-current cables. The cable geometry and the layout of the superconducting tapes are directly related to the performance of the HTS cable. In this paper, we use numerical methods to perform a comparison study of multiple-stage twisted stacked-tape cable (TSTC) conductors to find better cable structures that can both improve the critical current and minimize the alternating current (AC) losses of the cable. The sub-cable geometry is designed to have a stair-step shape. Three superconducting tape layouts are chosen and their transport performance and AC losses are evaluated. The magnetic field and current density profiles of the cables are obtained. The results show that arrangement of the superconducting tapes from the interior towards the exterior of the cable based on their critical current values in descending order can enhance the cable's transport capacity while significantly reducing the AC losses. These results imply that cable transport capacity improvements can be achieved by arranging the superconducting tapes in a manner consistent with the electromagnetic field distribution. Through comparison of the critical currents and AC losses of four types of HTS cables, we determine the best structural choice among these cables.

Method of fabricating a (1223) Tl-Ba-Ca-Cu-O superconductor

DOEpatents

Tkaczyk, J.E.; Lay, K.W.; He, Q.

1997-07-08

A method is disclosed for fabricating a polycrystalline <223> thallium-containing superconductor having high critical current at elevated temperatures and in the presence of a magnetic field. A powder precursor containing compounds other than thallium is compressed on a substrate. Thallium is incorporated in the densified powder precursor at a high temperature in the presence of a partial pressure of a thallium-containing vapor. 2 figs.

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

High temperature and frequency pressure sensor based on silicon-on-insulator layers

NASA Astrophysics Data System (ADS)

Zhao, Y. L.; Zhao, L. B.; Jiang, Z. D.

2006-03-01

Based on silicon on insulator (SOI) technology, a novel high temperature pressure sensor with high frequency response is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is developed by the separation by implantation of oxygen (SIMOX) technology. This layer can isolate leak currents between the top silicon layer for the detecting circuit and body silicon at a temperature of about 200 °C. In addition, the technology of silicon and glass bonding is used to create a package of the sensor without internal strain. A structural model and test data from the sensor are presented. The experimental results showed that this kind of sensor possesses good static performance in a high temperature environment and high frequency dynamic characteristics, which may satisfy the pressure measurement demands of the oil industry, aviation and space, and so on.

Methods of Measurement of High Air Velocities by the Hot-wire Method

NASA Technical Reports Server (NTRS)

Weske, John R.

1943-01-01

Investigations of strengths of hot wires at high velocities were conducted with platinum, nickel, and tungsten at approximately 200 Degrees Celcius hot-wire temperature. The results appear to disqualify platinum for velocities approaching the sonic range; whereas nickel withstands sound velocity, and tungsten may be used for supersonic velocities under standard atmospheric conditions. Hot wires must be supported by rigid prolongs at high velocities to avoid wire breakage. Resting current measurements for constant temperature show agreement with King's relation.

The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature.

PubMed

Lee, Seung-Yong; Kim, Tae-Hong; Chol, Nam-Kyu; Seong, Han-Kyu; Choi, Heon-Jin; Ahn, Byung-Guk; Lee, Sang-Kwon

2008-10-01

We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was approximately 0.7 eV with a standard deviation of approximately 0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (approximately 0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.

How Does Ambient Air Temperature Affect Diabetes Mortality in Tropical Cities?

PubMed

Seposo, Xerxes T; Dang, Tran Ngoc; Honda, Yasushi

2017-04-05

Diabetes is well-known as one of the many chronic diseases that affect different age groups. Currently, most studies that evaluated the effects of temperature on diabetes mortality focused on temperate and subtropical settings, but no study has been conducted to assess the relationship in a tropical setting. We conducted the first multi-city study carried out in tropical cities, which evaluated the temperature-diabetes relationship. We collected daily diabetes mortality (ICD E10-E14) of four Philippine cities from 2006 to 2011. Same period meteorological data were obtained from the National Oceanic and Atmospheric Administration. We used a generalized additive model coupled with a distributed lag non-linear model (DLNM) in determining the relative risks. Results showed that both low and high temperatures pose greater risks among diabetics. Likewise, the study was able to observe the: (1) high risk brought about by low temperature, aside from the largely observed high risks by high temperature; and (2) protective effects in low temperature percentile. These results provide significant policy implications with strategies related to diabetes risk groups in relation to health service and care strategies.

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad

2010-01-01

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

MoSi2-Base Composite for Engine Applications

NASA Technical Reports Server (NTRS)

Hebsur, Mohan G.; Nathal, Michael V.

1997-01-01

The intermetallic compound MoSi2 has long been known as a high temperature material that has excellent oxidation resistance and electrical/thermal conductivity. Also its low cost, high melting point (2023 C), relatively low density (6.2 g/cm versus 8 g/cm for current engine materials), and ease of machining make it an attractive structural material. However, the use of MoSi2 has been hindered because of the brittle nature of the material at low temperatures, inadequate creep resistance at high temperatures, accelerated oxidation (also known as 'pest' oxidation) at temperatures between approximately 400 and 500 C, and a coefficient of thermal expansion (CTE) that is relatively high in comparison to potential reinforcing fibers such as SiC. This CTE mismatch between the fiber and the matrix resulted in severe matrix cracking during thermal cycling.

Lattice Thermal Conductivity of Ultra High Temperature Ceramics (UHTC) ZrB2 and HfB2 from Atomistic Simulations

NASA Technical Reports Server (NTRS)

Lawson, JOhn W.; Daw, Murray S.; Bauschlicher, Charles W.

2011-01-01

Ultra high temperature ceramics (UHTC) including ZrB2 and HfB2 are candidate materials for applications in extreme environments because of their high melting point, good mechanical properties and reasonable oxidation resistance. Unlike many ceramics, these materials have high thermal conductivity which can be advantageous, for example, to reduce thermal shock. Recently, we developed Tersoff style interatomic potentials for both ZrB2 and HfB2 appropriate for atomistic simulations. As an application, Green-Kubo molecular dynamics simulations were performed to evaluate the lattice thermal conductivity for single crystals of ZrB2 and HfB2. The atomic mass difference in these binary compounds leads to oscillations in the time correlation function of the heat current. Results at room temperature and at elevated temperatures will be reported.

High Temperature Carbonized Grass as a High Performance Sodium Ion Battery Anode.

PubMed

Zhang, Fang; Yao, Yonggang; Wan, Jiayu; Henderson, Doug; Zhang, Xiaogang; Hu, Liangbing

2017-01-11

Hard carbon is currently considered the most promising anode candidate for room temperature sodium ion batteries because of its relatively high capacity, low cost, and good scalability. In this work, switchgrass as a biomass example was carbonized under an ultrahigh temperature, 2050 °C, induced by Joule heating to create hard carbon anodes for sodium ion batteries. Switchgrass derived carbon materials intrinsically inherit its three-dimensional porous hierarchical architecture, with an average interlayer spacing of 0.376 nm. The larger interlayer spacing than that of graphite allows for the significant Na ion storage performance. Compared to the sample carbonized under 1000 °C, switchgrass derived carbon at 2050 °C induced an improved initial Coulombic efficiency. Additionally, excellent rate capability and superior cycling performance are demonstrated for the switchgrass derived carbon due to the unique high temperature treatment.

Liquid lubricants for advanced aircraft engines

NASA Technical Reports Server (NTRS)

Loomis, William R.; Fusaro, Robert L.

1993-01-01

An overview of liquid lubricants for use in current and projected high performance turbojet engines is discussed. Chemical and physical properties are reviewed with special emphasis placed on the oxidation and thermal stability requirements imposed upon the lubrication system. A brief history is given of the development of turbine engine lubricants which led to the present day synthetic oils with their inherent modification advantages. The status and state of development of some eleven candidate classes of fluids for use in advanced turbine engines are discussed. Published examples of fundamental studies to obtain a better understanding of the chemistry involved in fluid degradation are reviewed. Alternatives to high temperature fluid development are described. The importance of continuing work on improving current high temperature lubricant candidates and encouraging development of new and improved fluid base stocks are discussed.

Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer

NASA Astrophysics Data System (ADS)

Noel, P.; Thomas, C.; Fu, Y.; Vila, L.; Haas, B.; Jouneau, P.-H.; Gambarelli, S.; Meunier, T.; Ballet, P.; Attané, J. P.

2018-04-01

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. We show that a HgCdTe barrier can be used to protect the HgTe from direct contact with the ferromagnet, leading to very high conversion rates, with inverse Edelstein lengths up to 2.0 ±0.5 nm . The influence of the HgTe layer thickness on the conversion efficiency is found to differ strongly from what is expected in spin Hall effect systems. These measurements, associated with the temperature dependence of the resistivity, suggest that these high conversion rates are due to the spin momentum locking property of HgTe surface states.

Liquid lubricants for advanced aircraft engines

NASA Technical Reports Server (NTRS)

Loomis, William R.; Fusaro, Robert L.

1992-01-01

An overview of liquid lubricants for use in current and projected high performance turbojet engines is discussed. Chemical and physical properties are reviewed with special emphasis placed on the oxidation and thermal stability requirements imposed upon the lubrication system. A brief history is given of the development of turbine engine lubricants which led to the present day synthetic oils with their inherent modification advantages. The status and state of development of some eleven candidate classes of fluids for use in advanced turbine engines are discussed. Published examples of fundamental studies to obtain a better understanding of the chemistry involved in fluid degradation are reviewed. Alternatives to high temperature fluid development are described. The importance of continuing work on improving current high temperature lubricant candidates and encouraging development of new and improved fluid base stocks are discussed.

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

NASA Astrophysics Data System (ADS)

Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Lu, Zhijian; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Gunning, Brendan P.; Koleske, Dan; Zhao, Yuji

2017-12-01

We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray Diffraction analysis reveals that material quality of InGaN/GaN did not degrade after thermal stress. The external quantum efficiency characteristics of solar cells were well-maintained at all temperatures, which demonstrates the thermal robustness of InGaN materials. Analysis of current density-voltage (J-V) curves shows that the degradation of conversion efficiency of solar cells is mainly caused by the decrease in open-circuit voltage (Voc), while short-circuit current (Jsc) and fill factor remain almost constant. The decrease in Voc after thermal stress is attributed to the compromised metal contacts. Transmission line method results further confirmed that p-type contacts became Schottky-like after thermal stress. The Arrhenius model was employed to estimate the failure lifetime of InGaN solar cells at different temperatures. These results suggest that while InGaN solar cells have high thermal stability, the degradation in the metal contact could be the major limiting factor for these devices under high temperature operation.

Long-term room temperature stability of TlBr gamma detectors

NASA Astrophysics Data System (ADS)

Conway, A. M.; Voss, L. F.; Nelson, A. J.; Beck, P. R.; Graff, R. T.; Nikolic, R. J.; Payne, S. A.; Kim, H.; Cirignano, L. J.; Shah, K.

2011-09-01

TlBr is a material of interest for use in room temperature gamma ray detector applications due to is wide bandgap 2.7 eV and high average atomic number (Tl 81, Br 35). Researchers have achieved energy resolutions of 1.3 % at 662 keV, demonstrating the potential of this material system. However, these detectors are known to polarize using conventional configurations, limiting their use. Continued improvement of room temperature, high-resolution gamma ray detectors based on TlBr requires further understanding of the degradation mechanisms. While high quality material is a critical starting point for excellent detector performance, we show that the room temperature stability of planar TlBr gamma spectrometers can be significantly enhanced by treatment with both hydrofluoric and hydrochloric acid. By incorporating F or Cl into the surface of TlBr, current instabilities are eliminated and the longer term current of the detectors remains unchanged. 241Am spectra are also shown to be more stable for extended periods; detectors have been held at 2000 V/cm for 52 days with less than 10% degradation in peak centroid position. In addition, evidence for the long term degradation mechanism being related to the contact metal is presented.

Experimental and numerical study of physiological responses in hot environments.

PubMed

Yang, Jie; Weng, Wenguo; Zhang, Baoting

2014-10-01

This paper proposed a multi-node human thermal model to predict human thermal responses in hot environments. The model was extended based on the Tanabe's work by considering the effects of high temperature on heat production, blood flow rate, and heat exchange coefficients. Five healthy men dressed in shorts were exposed in thermal neutral (29 °C) and high temperature (45 °C) environments. The rectal temperatures and skin temperatures of seven human body segments were continuously measured during the experiment. Validation of this model was conducted with experimental data. The results showed that the current model could accurately predict the skin and core temperatures in terms of the tendency and absolute values. In the human body segments expect calf and trunk, the temperature differences between the experimental data and the predicted results in high temperature environment were smaller than those in the thermally neutral environment conditions. The extended model was proved to be capable of predicting accurately human physiological responses in hot environments. Copyright © 2014 Elsevier Ltd. All rights reserved.

Temperature and frequency characteristics of low-loss MnZn ferrite in a wide temperature range

NASA Astrophysics Data System (ADS)

Sun, Ke; Lan, Zhongwen; Yu, Zhong; Xu, Zhiyong; Jiang, Xiaona; Wang, Zihui; Liu, Zhi; Luo, Ming

2011-05-01

A low-loss Mn0.7Zn0.24Fe2.06O4 ferrite has been prepared by a solid-state reaction method. The MnZn ferrite has a high initial permeability, μi (3097), a high saturation induction, Bs (526 mT), a high Curie temperature, Tc (220 °C), and a low core loss, PL (≤ 415 kW/m3) in a wide temperature (25-120 °C) and frequency (10-100 kHz) range. As the temperature increases, an initial decrease followed by a subsequent increase of hysteresis loss, Ph, and eddy current loss, Pe is observed. Both Ph and Pe increase with increasing frequency. When f ≥ 300 kHz, a residual loss, Pr, appears. Pe increases with increasing temperature and frequency. The temperature and frequency dependence of Ph can be explained by irreversible domain wall movements, Pe by the skin effect, and Pr by domain wall resonance, respectively.

High Temperature Polymers for use in Fuel Cells

NASA Technical Reports Server (NTRS)

Peplowski, Katherine M.

2004-01-01

NASA Glenn Research Center (GRC) is currently working on polymers for fuel cell and lithium battery applications. The desire for more efficient, higher power density, and a lower environmental impact power sources has led to interest in proton exchanges membrane fuels cells (PEMFC) and lithium batteries. A PEMFC has many advantages as a power source. The fuel cell uses oxygen and hydrogen as reactants. The resulting products are electricity, heat, and water. The PEMFC consists of electrodes with a catalyst, and an electrolyte. The electrolyte is an ion-conducting polymer that transports protons from the anode to the cathode. Typically, a PEMFC is operated at a temperature of about 80 C. There is intense interest in developing a fuel cell membrane that can operate at higher temperatures in the range of 80 C- 120 C. Operating the he1 cell at higher temperatures increases the kinetics of the fuel cell reaction as well as decreasing the susceptibility of the catalyst to be poisoned by impurities. Currently, Nafion made by Dupont is the most widely used polymer membrane in PEMFC. Nafion does not function well above 80 C due to a significant decrease in the conductivity of the membrane from a loss of hydration. In addition to the loss of conductivity at high temperatures, the long term stability and relatively high cost of Nafion have stimulated many researches to find a substitute for Nafion. Lithium ion batteries are popular for use in portable electronic devices, such as laptop computers and mobile phones. The high power density of lithium batteries makes them ideal for the high power demand of today s advanced electronics. NASA is developing a solid polymer electrolyte that can be used for lithium batteries. Solid polymer electrolytes have many advantages over the current gel or liquid based systems that are used currently. Among these advantages are the potential for increased power density and design flexibility. Automobiles, computers, and cell phones require highly efficient power density for lowering emissions and meeting increasing consumer demands. Many of the solutions can be provided by proton exchange membrane fuel cells and lithium batteries. NASA Glenn Research Center has recognized this need, and is presently engaged in a solution. The goals for the summer include mastering synthesis techniques, understanding the reactions occurring during the synthesis, and characterizing the resulting polymer membranes using NMR, DSC, and TGA for the PEMFC and lithium batteries.

Temperature, illumination and fluence dependence of current and voltage in electron irradiated solar cells

NASA Technical Reports Server (NTRS)

Obenschain, A. F.; Faith, T. J.

1973-01-01

Emperical equations have been derived from measurements of solar cell photovoltaic characteristics relating light generated current, IL, and open circuit voltage, VO, to cell temperature, T, intensity of illumination, W, and 1 Mev electron fluence, phi both 2 ohm-cm and 10 ohm-cm cells were tested. The temperature dependency of IL is similar for both resistivities at 140mw/sq cm; at high temperature the coefficient varies with fluence as phi 0.18, while at low temperatures the coefficient is relatively independent of fluence. Fluence dependent degration causes a decrease in IL at a rate proportional to phi 0.153 for both resistivities. At all intensities other than 560 mw/sq cm, a linear dependence of IL on illumination was found. The temperature coefficient of voltage was, to a good approximation, independent of both temperature and illumination for both resistivities. Illumination dependence of VOC was logarithmic, while the decrease with fluence of VOC varied as phi 0.25 for both resistivities.

The second peak effect and vortex pinning mechanisms in Ba(Fe,Ni)2As2 superconductors

NASA Astrophysics Data System (ADS)

Ghorbani, S. R.; Arabi, H.; Wang, X. L.

2017-09-01

Vortex pinning mechanisms have been studied systematically in BaFe1.9Ni0.1As2 single crystal as a function of temperature and magnetic field. The obtained shielding current density, Js, showed a second peak in the intermediate magnetic field range at high temperatures. The temperature dependence of the shielding current density, Js(T), was analysed within the collective pinning model at different magnetic fields. It was found that the second peak reflects the coexistence of both δl pinning, reflecting spatial variation in the mean free path (l), and δTc pinning, reflecting spatial variation in the superconducting critical temperature (Tc) at low temperature and low magnetic fields in BaFe1.9Ni0.1As2 single crystal. The results clearly show that pinning mechanism effects are strongly temperature and magnetic field dependent, and the second peak effect is more powerful at higher temperatures and magnetic fields. It was also found that the magnetic field mainly controls the pinning mechanism effect.

Power supply system for the superconducting outsert of the CHMFL hybrid magnet

NASA Astrophysics Data System (ADS)

Fang, Z.; Zhu, J.; Chen, W.; Jiang, D.; Huang, P.; Chen, Z.; Tan, Y.; Kuang, G.

2017-12-01

The construction of a new hybrid magnet, consisting of a 11 T superconducting outsert and a 34 T resistive insert magnet, has been finished at the Chinese High Magnetic Field Laboratory (CHMFL) in Hefei. With a room temperature bore of 800 mm in diameter, the hybrid magnet superconducting outsert is composed of four separate Nb3Sn-based Cable-in-Conduit Conductor (CICC) coils electrically connected in series and powered by a single power supply system. The power supply system for the superconducting outsert consists of a 16 kA DC power supply, a quench protection system, a pair of 16 kA High Temperature Superconducting (HTS) current leads, and two Low Temperature Superconducting bus-lines. The design and manufacturing of the power supply system have been completed at the CHMFL. This paper describes the design features of the power supply system as well as the current fabrication condition of its main components.

An experimental platform for triaxial high-pressure/high-temperature testing of rocks using computed tomography

NASA Astrophysics Data System (ADS)

Glatz, Guenther; Lapene, Alexandre; Castanier, Louis M.; Kovscek, Anthony R.

2018-04-01

A conventional high-pressure/high-temperature experimental apparatus for combined geomechanical and flow-through testing of rocks is not X-ray compatible. Additionally, current X-ray transparent systems for computed tomography (CT) of cm-sized samples are limited to design temperatures below 180 °C. We describe a novel, high-temperature (>400 °C), high-pressure (>2000 psi/>13.8 MPa confining, >10 000 psi/>68.9 MPa vertical load) triaxial core holder suitable for X-ray CT scanning. The new triaxial system permits time-lapse imaging to capture the role of effective stress on fluid distribution and porous medium mechanics. System capabilities are demonstrated using ultimate compressive strength (UCS) tests of Castlegate sandstone. In this case, flooding the porous medium with a radio-opaque gas such as krypton before and after the UCS test improves the discrimination of rock features such as fractures. The results of high-temperature tests are also presented. A Uintah Basin sample of immature oil shale is heated from room temperature to 459 °C under uniaxial compression. The sample contains kerogen that pyrolyzes as temperature rises, releasing hydrocarbons. Imaging reveals the formation of stress bands as well as the evolution and connectivity of the fracture network within the sample as a function of time.

An experimental platform for triaxial high-pressure/high-temperature testing of rocks using computed tomography.

PubMed

Glatz, Guenther; Lapene, Alexandre; Castanier, Louis M; Kovscek, Anthony R

2018-04-01

A conventional high-pressure/high-temperature experimental apparatus for combined geomechanical and flow-through testing of rocks is not X-ray compatible. Additionally, current X-ray transparent systems for computed tomography (CT) of cm-sized samples are limited to design temperatures below 180 °C. We describe a novel, high-temperature (>400 °C), high-pressure (>2000 psi/>13.8 MPa confining, >10 000 psi/>68.9 MPa vertical load) triaxial core holder suitable for X-ray CT scanning. The new triaxial system permits time-lapse imaging to capture the role of effective stress on fluid distribution and porous medium mechanics. System capabilities are demonstrated using ultimate compressive strength (UCS) tests of Castlegate sandstone. In this case, flooding the porous medium with a radio-opaque gas such as krypton before and after the UCS test improves the discrimination of rock features such as fractures. The results of high-temperature tests are also presented. A Uintah Basin sample of immature oil shale is heated from room temperature to 459 °C under uniaxial compression. The sample contains kerogen that pyrolyzes as temperature rises, releasing hydrocarbons. Imaging reveals the formation of stress bands as well as the evolution and connectivity of the fracture network within the sample as a function of time.

Low-noise magnetometer based on inductance modulation in high-critical-temperature superconductor coil

NASA Astrophysics Data System (ADS)

Enpuku, Keiji; Matsuo, Masaaki; Yoshida, Yujiro; Yamashita, Shigeya; Sasayama, Teruyoshi; Yoshida, Takashi

2018-06-01

We developed a magnetometer based on inductance modulation of a coil made from a high-critical-temperature superconducting material. The coil inductance was modulated over time via a modulation current applied to a magnetic wire that was inserted into the coil. The magnetic field was then converted into a signal voltage using this time-dependent inductance. The relationship between magnetometer performance and the modulation current conditions was studied. Under appropriate conditions, the magnetometer had responsivity of 885 V/T. The magnetic field noise was 1.3 pT/Hz1/2 in the white noise region and 5.6 pT/Hz1/2 at f = 1 Hz.

All high Tc edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Foote, M. C.; Bajuk, L. J.

1991-01-01

High quality YBa2Cu3O(7-x) normal-metal/YBa2Cu3O(7-x) edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective mormal metal coherence length of 20 A.

Characterization of beam-driven instabilities and current redistribution in MST plasmas

NASA Astrophysics Data System (ADS)

Parke, E.

2015-11-01

A unique, high-rep-rate (>10 kHz) Thomson scattering diagnostic and a high-bandwidth FIR interferometer-polarimeter on MST have enabled characterization of beam-driven instabilities and magnetic equilibrium changes observed during high power (1 MW) neutral beam injection (NBI). While NBI leads to negligible net current drive, an increase in on-axis current density observed through Faraday rotation is offset by a reduction in mid-radius current. Identification of the phase flip in temperature fluctuations associated with tearing modes provides a sensitive measure of rational surface locations. This technique strongly constrains the safety factor for equilibrium reconstruction and provides a powerful new tool for measuring the equilibrium magnetic field. For example, the n = 6 temperature structure is observed to shift inward 1.1 +/- 0.6 cm, with an estimated reduction of q0 by 5%. This is consistent with a mid-radius reduction in current, and together the Faraday rotation and Thomson scattering measurements corroborate an inductive redistribution of current that compares well with TRANSP/MSTFit predictions. Interpreting tearing mode temperature structures in the RFP remains challenging; the effects of multiple, closely-spaced tearing modes on the mode phase measurement require further verification. In addition to equilibrium changes, previous work has shown that the large fast ion population drives instabilities at higher frequencies near the Alfvén continuum. Recent observations reveal a new instability at much lower frequency (~7 kHz) with strongly chirping behavior. It participates in extensive avalanches of the higher frequency energetic particle and Alfvénic modes to drive enhanced fast ion transport. Internal structures measured from Te and ne fluctuations, their dependence on the safety factor, as well as frequency scaling motivate speculation about mode identity. Work supported by U.S. DOE.

Preparation, consolidation, and crystallization of bulk metallic glasses

NASA Astrophysics Data System (ADS)

Holland, Troy

Bulk metallic glasses (BMGs) have been widely researched over the last decade. Research has primarily focused on BMGs of differing compositions and conditions within 3 main subject areas: preparation, consolidation, and crystallization. This work endeavors to show the interrelationships among each area across several types of BMG. Two compositions of zirconium(Zr)-type BMGs were prepared by mechanical attrition using a high-energy ball mill. The thermal and x-ray diffraction show that by milling elemental powders it is possible to obtain metallic powders with a glassy nature. These powders were then consolidated using a novel, high current density hot press. Hot pressing by using a spark plasma sintering (SPS) device has shown itself to be very useful in consolidating hard to produce intermetallics and ceramics. By utilizing high current densities and extremely rapid heating rates, the consolidation of the Zr-type ball milled powders and a gas atomized iron(Fe)-type powder was achieved. Utilizing the Kissinger relationship between reaction temperatures and their heating rates allowed for higher peak consolidation temperatures without fully- or partially-devitrifying the powders. The current densities applied aid in the diffusion and thermodynamics of the devitrification reaction. This affect has had little to no previous research so it was necessary to determine the specific effects of applied currents upon the devitrification of BMGs. To determine the role of applied currents on crystallization, or devitrification, of BMGs required the application of differing currents at fixed annealing temperatures. Once this was achieved it was possible with small-angle neutron scattering (SANS), differential scanning calorimetry (DSC), and transmission electron microscopy (TEM) to show that both the kinetics and thermodynamics of the devitrification reaction were affected.

SQUID picovoltometry of single crystal Bi2Sr2CaCu2O(8+delta) - Observation of the crossover from high-temperature Arrhenius to low-temperature vortex-glass behavior

NASA Astrophysics Data System (ADS)

Safar, H.; Gammel, P. L.; Bishop, D. J.; Mitzi, D. B.; Kapitulnik, A.

1992-04-01

A SQUID voltmeter has been used to measure current-voltage curves in untwinned crystals of Bi2Sr2CaCu2O(8+delta) as a function of temperature and magnetic field. The data show a clear crossover from high-temperature Arrhenius behavior to a critical region associated with the low-temperature three-dimensional vortex-glass phase transition. The critical exponents v(z - 1) = 7 +/- 1 in this system are in accord with theoretical models and previous measurements in YBa2Cu3O7. The width of the critical region collapses below 2 T, reflecting the changing role of dimensionality with field.

High-resolution fast temperature mapping of a gas turbine combustor simulator with femtosecond infrared laser written fiber Bragg gratings

NASA Astrophysics Data System (ADS)

Walker, Robert B.; Yun, Sangsig; Ding, Huimin; Charbonneau, Michel; Coulas, David; Ramachandran, Nanthan; Mihailov, Stephen J.

2017-02-01

Femtosecond infrared (fs-IR) written fiber Bragg gratings (FBGs), have demonstrated great potential for extreme sensing. Such conditions are inherent to the advanced gas turbine engines under development to reduce greenhouse gas emissions; and the ability to measure temperature gradients in these harsh environments is currently limited by the lack of sensors and controls capable of withstanding the high temperature, pressure and corrosive conditions present. This paper discusses fabrication and deployment of several fs-IR written FBG arrays, for monitoring the sidewall and exhaust temperature gradients of a gas turbine combustor simulator. Results include: contour plots of measured temperature gradients contrasted with thermocouple data, discussion of deployment strategies and comments on reliability.

Development and testing of a superconducting link for an IR detector

NASA Technical Reports Server (NTRS)

Caton, R.; Selim, R.

1991-01-01

The development and testing of a ceramic superconducting link for an infrared detector is summarized. Areas of study included the materials used, the electrical contacts, radiation and temperature cycling effects, aging, thermal conductivity, and computer models of an ideal link. Materials' samples were processed in a tube furnace at temperatures of 840 C to 865 C for periods up to 17 days and transition temperatures and critical current densities were recorded. The project achieved better quality high superconducting transition temperature material through improved processing and also achieved high quality electrical contacts. Studies on effects of electron irradiation, temperature cycling, and aging on superconducting properties indicate that the materials will be suitable for space applications. Various presentations and publications on the study's results are reported.

Prediction Based Proactive Thermal Virtual Machine Scheduling in Green Clouds

PubMed Central

Kinger, Supriya; Kumar, Rajesh; Sharma, Anju

2014-01-01

Cloud computing has rapidly emerged as a widely accepted computing paradigm, but the research on Cloud computing is still at an early stage. Cloud computing provides many advanced features but it still has some shortcomings such as relatively high operating cost and environmental hazards like increasing carbon footprints. These hazards can be reduced up to some extent by efficient scheduling of Cloud resources. Working temperature on which a machine is currently running can be taken as a criterion for Virtual Machine (VM) scheduling. This paper proposes a new proactive technique that considers current and maximum threshold temperature of Server Machines (SMs) before making scheduling decisions with the help of a temperature predictor, so that maximum temperature is never reached. Different workload scenarios have been taken into consideration. The results obtained show that the proposed system is better than existing systems of VM scheduling, which does not consider current temperature of nodes before making scheduling decisions. Thus, a reduction in need of cooling systems for a Cloud environment has been obtained and validated. PMID:24737962

Large-Velocity Saturation in Thin-Film Black Phosphorus Transistors.

PubMed

Chen, Xiaolong; Chen, Chen; Levi, Adi; Houben, Lothar; Deng, Bingchen; Yuan, Shaofan; Ma, Chao; Watanabe, Kenji; Taniguchi, Takashi; Naveh, Doron; Du, Xu; Xia, Fengnian

2018-05-22

A high saturation velocity semiconductor is appealing for applications in electronics and optoelectronics. Thin-film black phosphorus (BP), an emerging layered semiconductor, shows a high carrier mobility and strong mid-infrared photoresponse at room temperature. Here, we report the observation of high intrinsic saturation velocity in 7 to 11 nm thick BP for both electrons and holes as a function of charge-carrier density, temperature, and crystalline direction. We distinguish a drift velocity transition point due to the competition between the electron-impurity and electron-phonon scatterings. We further achieve a room-temperature saturation velocity of 1.2 (1.0) × 10 7 cm s -1 for hole (electron) carriers at a critical electric field of 14 (13) kV cm -1 , indicating an intrinsic current-gain cutoff frequency ∼20 GHz·μm for radio frequency applications. Moreover, the current density is as high as 580 μA μm -1 at a low electric field of 10 kV cm -1 . Our studies demonstrate that thin-film BP outperforms silicon in terms of saturation velocity and critical field, revealing its great potential in radio-frequency electronics, high-speed mid-infrared photodetectors, and optical modulators.

Shape memory alloy resistance behaviour at high altitude for feedback control

NASA Astrophysics Data System (ADS)

Ng, W. T.; Sedan, M. F.; Abdullah, E. J.; Azrad, S.; Harithuddin, A. S. M.

2017-12-01

Many recent aerospace technologies are using smart actuators to reduce the system's complexity and increase its reliability. One such actuator is shape memory alloy (SMA) actuator, which is lightweight, produces high force and large deflection. However, some disadvantages in using SMA actuators have been identified and they include nonlinear response of the strain to input current, hysteresis characteristic that results in inaccurate control and less than optimum system performance, high operating temperatures, slow response and also high requirement of electrical power to obtain the desired actuation forces. It is still unknown if the SMA actuators can perform effectively at high altitude with low surrounding temperature. The work presented here covers the preliminary process of verifying the feasibility of using resistance as feedback control at high altitude for aerospace applications. Temperature and resistance of SMA actuator at high altitude is investigated by conducting an experiment onboard a high altitude balloon. The results from the high altitude experiment indicate that the resistance or voltage drop of the SMA wire is not significantly affected by the low surrounding temperature at high altitude as compared to the temperature of SMA. Resistance feedback control for SMA actuators may be suitable for aerospace applications.

Corrosion of oxide dispersion strengthened iron-chromium steels and tantalum in fluoride salt coolant: An in situ compatibility study for fusion and fusion-fission hybrid reactor concepts

NASA Astrophysics Data System (ADS)

El-Dasher, Bassem; Farmer, Joseph; Ferreira, James; de Caro, Magdalena Serrano; Rubenchik, Alexander; Kimura, Akihiko

2011-12-01

Primary candidate classes of materials for future nuclear power plants, whether they be fission, fusion or hybrids, include oxide dispersion strengthened (ODS) ferritic steels which rely on a dispersion of nano-oxide particles in the matrix for both mechanical strength and swelling resistance, or tantalum alloys which have an inherent neutron-induced swelling resistance and high temperature strength. For high temperature operation, eutectic molten lithium containing fluoride salts are attractive because of their breeding capability as well as their relatively high thermal capacity, which allow for a higher average operating temperature that increases power production. In this paper we test the compatibility of Flinak (LiF-NaF-KF) salts on ODS steels, comparing the performance of current generation ODS steels developed at Kyoto University with the commercial alloy MA956. Pure tantalum was also tested for comparative purposes. In situ data was obtained for temperatures ranging from 600 to 900 °C using a custom-built high temperature electrochemical impedance spectroscopy cell. Results for ODS steels show that steel/coolant interfacial resistance increases from 600 to 800 °C due to an aluminum enriched layer forming at the surface, however an increase in temperature to 900 °C causes this layer to break up and aggressive attack to occur. Performance of current generation ODS steels surpassed that of the MA956 ODS steel, with an in situ impedance behavior similar or better than that of pure tantalum.

Sandia National Laboratories: Research: R&D 100 Awards

Science.gov Websites

high radiation environments such as space. Watch the video. control system for active damping of inter first commercially available, high-voltage, high-frequency, high-current, high-temperature, single-chip Materials Science Nanodevices & Microsystems Radiation Effects & High Energy Density Science

Two ways to model voltage current curves of adiabatic MgB2 wires

NASA Astrophysics Data System (ADS)

Stenvall, A.; Korpela, A.; Lehtonen, J.; Mikkonen, R.

2007-08-01

Usually overheating of the sample destroys attempts to measure voltage-current curves of conduction cooled high critical current MgB2 wires at low temperatures. Typically, when a quench occurs a wire burns out due to massive heat generation and negligible cooling. It has also been suggested that high n values measured with MgB2 wires and coils are not an intrinsic property of the material but arise due to heating during the voltage-current measurement. In addition, quite recently low n values for MgB2 wires have been reported. In order to find out the real properties of MgB2 an efficient computational model is required to simulate the voltage-current measurement. In this paper we go back to basics and consider two models to couple electromagnetic and thermal phenomena. In the first model the magnetization losses are computed according to the critical state model and the flux creep losses are considered separately. In the second model the superconductor resistivity is described by the widely used power law. Then the coupled current diffusion and heat conduction equations are solved with the finite element method. In order to compare the models, example runs are carried out with an adiabatic slab. Both models produce a similar significant temperature rise near the critical current which leads to fictitiously high n values.

High-speed fluorescent thermal imaging of quench propagation in high temperature superconductor tapes

NASA Astrophysics Data System (ADS)

Gyuráki, Roland; Sirois, Frédéric; Grilli, Francesco

2018-07-01

Fluorescent microthermographic imaging, a method using rare-earth fluorescent coatings with temperature dependent light emission, was used for quench investigation in high temperature superconductors (HTS). A fluorophore was embedded in a polymer matrix and used as a coating on top of an HTS tape, while being excited with UV light and recorded with a high-speed camera. Simultaneously, the tape was pulsed with high amplitude, short duration DC current, and brought to quench with the help of a localised defect. The Joule heating during a quench influences the fluorescent light intensity emitted from the coating, and by recording the local variations in this intensity over time, the heating of the tape can be visualised and the developed temperatures can be calculated. In this paper, the fluorophore europium tris[3-(trifluoromethylhydroxymethylene)-(+)-camphorate] (EuTFC) provided sufficient temperature sensitivity and a usable temperature range from 77-260 K. With the help of 2500 image captures per second, the normal zone development was imaged in a 20 μm copper stabilised HTS tape held in a liquid nitrogen bath, and using a calibration curve, the temperatures reached during the quench have been calculated.

1.55 um aluminum gallium indium arsenide strained MQW laser diodes

NASA Astrophysics Data System (ADS)

Yang, Chi

At the 1.55 mum eye-safe, telecommunications operating wavelength, semiconductor diode lasers must have low threshold currents and operate at high temperatures without thermoelectric coolers. Existing diode lasers in this wavelength range based on the GaInAsP/InP materials system are very sensitive to operating temperature. To obtain high temperature, high power 1.55 mum semiconductor diode lasers, the AlGaInAs/InP materials system with strained quantum well (QW) active regions was investigated with the goal of improving temperature performance. A set of lasers with active regions consisting of different numbers of QWs (2 to 4) and different QW strains (1.2% and 1.6%) were designed taking into account the quaternary alloy bandgap of AlGaInAs, the effect of strain on the bandgap, and the quantum size effects within the QW. The active region growth temperature was optimized using photoluminescence intensity. The wafers were first processed into broad-area lasers and measured under pulsed injection. The characteristic threshold current temperature, T0, for all AlGaInAs lasers was higher (60-70 K) than for GaInAsP lasers. No strong dependence of temperature parameters on strain was observed, while properties varied significantly with the number of QWs. With more QWs, both internal efficiency and T0 increases, but internal loss increases, reducing the characteristic temperature of the differential efficiency T1. The results show that uncooled laser operation at 1.55 mum is very promising with strained AlGaInAs QWs. Ridge waveguide devices demonstrated low threshold and high output power as well as good temperature performance under continuous wave operation. Devices with different ridge heights were fabricated from one wafer and their performance was compared. It was found that current spreading was significant in these devices and a simple current density-versus-applied voltage analysis was developed to determine the spreading factor. The analysis shows that the current spreading was not effectively limited until etching went below the doped cladding layer. A recombination coefficient analysis was performed to investigate the effect of strain on Auger recombination predicted by theory. An indirect method to infer both the nonradiative recombination coefficient and the Auger recombination coefficient was initially used. The measured values of the recombination coefficients were consistent with theoretical predictions and measurements based on other material systems. The Auger recombination was lower than expected, indicating that Auger recombination is reduced in these strained QWs. To understand the carrier dynamics, impedance measurements were carried out for the first time in AlGaInAs strained QW lasers. A small-signal, sub-threshold equivalent circuit model was derived from the laser rate equations to model the measured laser impedance. Several characteristic carrier lifetimes were obtained directly from these electrical impedance measurements. From the temperature dependence of the QW escape time, it was found that hole rather than electron leakage is dominant in the AlGaInAs system due to the relatively low valence band offset. This may explain why the improvement of T0 in AlGaInAs QW 1.55 mum active regions is limited.

Ionomer-Liquid Electrolyte Hybrid Ionic Conductor for High Cycling Stability of Lithium Metal Electrodes

PubMed Central

Song, Jongchan; Lee, Hongkyung; Choo, Min-Ju; Park, Jung-Ki; Kim, Hee-Tak

2015-01-01

The inhomogeneous Li electrodeposition of lithium metal electrode has been a major impediment to the realization of rechargeable lithium metal batteries. Although single ion conducting ionomers can induce more homogeneous Li electrodeposition by preventing Li+ depletion at Li surface, currently available materials do not allow room-temperature operation due to their low room temperature conductivities. In the paper, we report that a highly conductive ionomer/liquid electrolyte hybrid layer tightly laminated on Li metal electrode can realize stable Li electrodeposition at high current densities up to 10 mA cm−2 and permit room-temperature operation of corresponding Li metal batteries with low polarizations. The hybrid layer is fabricated by laminating few micron-thick Nafion layer on Li metal electrode followed by soaking 1 M LiPF6 EC/DEC (1/1) electrolyte. The Li/Li symmetric cell with the hybrid layer stably operates at a high current density of 10 mA cm−2 for more than 2000 h, which corresponds to more than five-fold enhancement compared with bare Li metal electrode. Also, the prototype Li/LiCoO2 battery with the hybrid layer offers cycling stability more than 350 cycles. These results demonstrate that the hybrid strategy successfully combines the advantages of bi-ionic liquid electrolyte (fast Li+ transport) and single ionic ionomer (prevention of Li+ depletion). PMID:26411701

Ionomer-Liquid Electrolyte Hybrid Ionic Conductor for High Cycling Stability of Lithium Metal Electrodes

NASA Astrophysics Data System (ADS)

Song, Jongchan; Lee, Hongkyung; Choo, Min-Ju; Park, Jung-Ki; Kim, Hee-Tak

2015-09-01

The inhomogeneous Li electrodeposition of lithium metal electrode has been a major impediment to the realization of rechargeable lithium metal batteries. Although single ion conducting ionomers can induce more homogeneous Li electrodeposition by preventing Li+ depletion at Li surface, currently available materials do not allow room-temperature operation due to their low room temperature conductivities. In the paper, we report that a highly conductive ionomer/liquid electrolyte hybrid layer tightly laminated on Li metal electrode can realize stable Li electrodeposition at high current densities up to 10 mA cm-2 and permit room-temperature operation of corresponding Li metal batteries with low polarizations. The hybrid layer is fabricated by laminating few micron-thick Nafion layer on Li metal electrode followed by soaking 1 M LiPF6 EC/DEC (1/1) electrolyte. The Li/Li symmetric cell with the hybrid layer stably operates at a high current density of 10 mA cm-2 for more than 2000 h, which corresponds to more than five-fold enhancement compared with bare Li metal electrode. Also, the prototype Li/LiCoO2 battery with the hybrid layer offers cycling stability more than 350 cycles. These results demonstrate that the hybrid strategy successfully combines the advantages of bi-ionic liquid electrolyte (fast Li+ transport) and single ionic ionomer (prevention of Li+ depletion).