Assessment study of infrared detector arrays for low-background astronomical research

NASA Technical Reports Server (NTRS)

Ando, K. J.

1978-01-01

The current state-of-the-art of infrared detector arrays employing charge coupled devices (CCD) or charge injection devices (CID) readout are assessed. The applicability, limitations and potentials of such arrays under the low-background astronomical observing conditions of interest for SIRFT (Shuttle Infrared Telescope Facility) are determined. The following are reviewed: (1) monolithic extrinsic arrays; (2) monolithic intrinsic arrays; (3) charge injection devices; and (4) hybrid arrays.

Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

NASA Astrophysics Data System (ADS)

Weis, Martin; Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2015-04-01

Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the device performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.

Load flows and faults considering dc current injections

NASA Technical Reports Server (NTRS)

Kusic, G. L.; Beach, R. F.

1991-01-01

The authors present novel methods for incorporating current injection sources into dc power flow computations and determining network fault currents when electronic devices limit fault currents. Combinations of current and voltage sources into a single network are considered in a general formulation. An example of relay coordination is presented. The present study is pertinent to the development of the Space Station Freedom electrical generation, transmission, and distribution system.

Effects of electrode modification using calcium on the performance of alternating current field-induced polymer electroluminescent devices

NASA Astrophysics Data System (ADS)

Xia, Yingdong; Chen, Yonghua; Smith, Gregory M.; Li, Yuan; Huang, Wenxiao; Carroll, David L.

2013-06-01

In this work, the effects of electrode modification by calcium (Ca) on the performance of AC field induced polymer electroluminescence (FIPEL) devices are studied. The FIPEL device with Ca/Al electrode exhibits 550 cd m-2, which is 27.5 times higher than that of the device with only an Al electrode (20 cd m-2). Both holes and electrons are injected from one electrode in our FIPEL device. We found that the electron injection can be significantly enhanced by a Ca modification on the Al electrode without greatly affecting the hole injection. Therefore, the electrons and holes can be effectively recombined in the emissive layer to form more excitons under the AC voltage, leading to effective light emission. The device emitted much brighter light than other AC-based organic EL devices. This result provides an easy and effective way to improve FIPEL performance.

Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films.

PubMed

Röhr, Jason A; Moia, Davide; Haque, Saif A; Kirchartz, Thomas; Nelson, Jenny

2018-03-14

Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

Exploring the validity and limitations of the Mott-Gurney law for charge-carrier mobility determination of semiconducting thin-films

NASA Astrophysics Data System (ADS)

Röhr, Jason A.; Moia, Davide; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

2018-03-01

Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in single carrier devices typically used to determine charge-carrier mobilities. For both low and high voltages, the current increases linearly with the applied voltage. Whereas the linear current at low voltages is mainly due to space charge in the middle of the device, the linear current at high voltage is caused by charge-carrier saturation due to a high degree of injection. As a consequence, the current density at these voltages does not follow the classical square law derived by Mott and Gurney, and we show that for trap-free devices, only for intermediate voltages, a space-charge-limited drift current can be observed with a slope that approaches a value of two. We show that, depending on the thickness of the semiconductor layer and the size of the injection barriers, the two linear current-voltage regimes can dominate the whole voltage range, and the intermediate Mott-Gurney regime can shrink or disappear. In this case, which will especially occur for thicknesses and injection barriers typical of single-carrier devices used to probe organic semiconductors, a meaningful analysis using the Mott-Gurney law will become unachievable, because a square-law fit can no longer be achieved, resulting in the mobility being substantially underestimated. General criteria for when to expect deviations from the Mott-Gurney law when used for analysis of intrinsic semiconductors are discussed.

Spin injection and transport in semiconductor and metal nanostructures

NASA Astrophysics Data System (ADS)

Zhu, Lei

In this thesis we investigate spin injection and transport in semiconductor and metal nanostructures. To overcome the limitation imposed by the low efficiency of spin injection and extraction and strict requirements for retention of spin polarization within the semiconductor, novel device structures with additional logic functionality and optimized device performance have been developed. Weak localization/antilocalization measurements and analysis are used to assess the influence of surface treatments on elastic, inelastic and spin-orbit scatterings during the electron transport within the two-dimensional electron layer at the InAs surface. Furthermore, we have used spin-valve and scanned probe microscopy measurements to investigate the influence of sulfur-based surface treatments and electrically insulating barrier layers on spin injection into, and spin transport within, the two-dimensional electron layer at the surface of p-type InAs. We also demonstrate and analyze a three-terminal, all-electrical spintronic switching device, combining charge current cancellation by appropriate device biasing and ballistic electron transport. The device yields a robust, electrically amplified spin-dependent current signal despite modest efficiency in electrical injection of spin-polarized electrons. Detailed analyses provide insight into the advantages of ballistic, as opposed to diffusive, transport in device operation, as well as scalability to smaller dimensions, and allow us to eliminate the possibility of phenomena unrelated to spin transport contributing to the observed device functionality. The influence of the device geometry on magnetoresistance of nanoscale spin-valve structures is also demonstrated and discussed. Shortcomings of the simplified one-dimensional spin diffusion model for spin valve are elucidated, with comparison of the thickness and the spin diffusion length in the nonmagnetic channel as the criterion for validity of the 1D model. Our work contributes directly to the realization of spin valve and spin transistor devices based on III-V semiconductors, and offers new opportunities to engineer the behavior of spintronic devices at the nanoscale.

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode.

PubMed

Chen, Horng-Shyang; Liu, Zhan Hui; Shih, Pei-Ying; Su, Chia-Ying; Chen, Chih-Yen; Lin, Chun-Han; Yao, Yu-Feng; Kiang, Yean-Woei; Yang, C C

2014-04-07

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

Light modulating device

DOEpatents

Rauh, R. David; Goldner, Ronald B.

1989-01-01

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity.

Light modulating device

DOEpatents

Rauh, R.D.; Goldner, R.B.

1989-12-26

In a device for transmitting light, means for controlling the transmissivity of the device, including a ceramic, reversibly electrochromic, crystalline element having a highly reflective state when injected with electrons and charge compensating ions and a highly transmissive state when the electrons and ions are removed, the crystalline element being characterized as having a reflectivity of at least 50% in the reflective state and not greater than 10% in the transmissive state, and means for modulating the crystalline element between the reflective and transmissive states by injecting ions into the crystalline element in response to an applied electrical current of a first polarity and removing the ions in response to an applied electrical current of a second polarity are disclosed. 1 fig.

Charge generation layers for solution processed tandem organic light emitting diodes with regular device architecture.

PubMed

Höfle, Stefan; Bernhard, Christoph; Bruns, Michael; Kübel, Christian; Scherer, Torsten; Lemmer, Uli; Colsmann, Alexander

2015-04-22

Tandem organic light emitting diodes (OLEDs) utilizing fluorescent polymers in both sub-OLEDs and a regular device architecture were fabricated from solution, and their structure and performance characterized. The charge carrier generation layer comprised a zinc oxide layer, modified by a polyethylenimine interface dipole, for electron injection and either MoO3, WO3, or VOx for hole injection into the adjacent sub-OLEDs. ToF-SIMS investigations and STEM-EDX mapping verified the distinct functional layers throughout the layer stack. At a given device current density, the current efficiencies of both sub-OLEDs add up to a maximum of 25 cd/A, indicating a properly working tandem OLED.

Controlling heat and particle currents in nanodevices by quantum observation

NASA Astrophysics Data System (ADS)

Biele, Robert; Rodríguez-Rosario, César A.; Frauenheim, Thomas; Rubio, Angel

2017-07-01

We demonstrate that in a standard thermo-electric nanodevice the current and heat flows are not only dictated by the temperature and potential gradient, but also by the external action of a local quantum observer that controls the coherence of the device. Depending on how and where the observation takes place, the direction of heat and particle currents can be independently controlled. In fact, we show that the current and heat flow in a quantum material can go against the natural temperature and voltage gradients. Dynamical quantum observation offers new possibilities for the control of quantum transport far beyond classical thermal reservoirs. Through the concept of local projections, we illustrate how we can create and directionality control the injection of currents (electronic and heat) in nanodevices. This scheme provides novel strategies to construct quantum devices with application in thermoelectrics, spintronic injection, phononics, and sensing among others. In particular, highly efficient and selective spin injection might be achieved by local spin projection techniques.

Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weis, Martin, E-mail: martin.weis@stuba.sk; Otsuka, Takako; Taguchi, Dai

2015-04-21

Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the devicemore » performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.« less

Injection of Spin-Polarized Electrons into a AlGaN/GaN Device from an Electrochemical Cell: Evidence for an Extremely Long Spin Lifetime.

PubMed

Kumar, Anup; Capua, Eyal; Fontanesi, Claudio; Carmieli, Raanan; Naaman, Ron

2018-04-24

Spin-polarized electrons are injected from an electrochemical cell through a chiral self-assembled organic monolayer into a AlGaN/GaN device in which a shallow two-dimensional electron gas (2DEG) layer is formed. The injection is monitored by a microwave signal that indicates a coherent spin lifetime that exceeds 10 ms at room temperature. The signal was found to be magnetic field independent; however, it depends on the current of the injected electrons, on the length of the chiral molecules, and on the existence of 2DEG.

The Hyaluronic Acid Fillers: Current Understanding of the Tissue Device Interface.

PubMed

Greene, Jacqueline J; Sidle, Douglas M

2015-11-01

The article is a detailed update regarding cosmetic injectable fillers, specifically focusing on hyaluronic acid fillers. Hyaluronic acid-injectable fillers are used extensively for soft tissue volumizing and contouring. Many different hyaluronic acid-injectable fillers are available on the market and differ in terms of hyaluronic acid concentration, particle size, cross-linking density, requisite needle size, duration, stiffness, hydration, presence of lidocaine, type of cross-linking technology, and cost. Hyaluronic acid is a natural component of many soft tissues, is identical across species minimizing immunogenicity has been linked to wound healing and skin regeneration, and is currently actively being studied for tissue engineering purposes. The biomechanical and biochemical effects of HA on the local microenvironment of the injected site are key to its success as a soft tissue filler. Knowledge of the tissue-device interface will help guide the facial practitioner and lead to optimal outcomes for patients. Copyright © 2015 Elsevier Inc. All rights reserved.

Measurements of high impedance two-terminal device with SMU NI PXIe-4139

NASA Astrophysics Data System (ADS)

Bogdanov, S. V.; Lelekov, E. T.; Kovalev, I. V.; Zelenkov, P. V.; Lelekov, A. T.

2016-11-01

To measure high-frequency and low-frequency impedance of betavoltaic power sources (it can be represented as two-terminal device), measurement stand was created. To measure high-frequency part need to inject external test signal through the current transformer with waveform generator and need to use external high-frequency current sensor, because of SMU PXIe-4139 current channel limitations.

Active stabilization of a diode laser injection lock.

PubMed

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-06-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

High thermal stability fluorene-based hole-injecting material for organic light-emitting devices

NASA Astrophysics Data System (ADS)

Li, Lu; Jiao, Bo; Li, Sanfeng; Ma, Lin; Yu, Yue; Wu, Zhaoxin

2016-03-01

Novel N1,N3,N5-tris(9,9-diphenyl-9H-fluroen-2-yl)-N1,N3,N5-triphenylbenzene-1,3,5-triamine (TFADB) was synthesized and characterized as a hole-injecting material (HIM) for organic light-emitting devices (OLEDs). By incorporating fluorene group TFADB shows a high glass-transition temperature Tg > 168 °C, indicative of excellent thermal stability. TFADB-based devices exhibited the highest performance in terms of the maximum current efficiency (6.0 cd/A), maximum power efficiency (4.0 lm/W), which is improved than that of the standard device based on 4-4‧-4″Tris(N-(naphthalene-2-yl)-N-phenyl-amino)triphenylamine (2T-NATA) (5.2 cd/A, 3.6 lm/W). This material could be a promising hole-injecting material, especially for the high temperature applications of OLEDs and other organic electronic devices.

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

PubMed

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

Injectable Hydrogels for Cardiac Tissue Repair after Myocardial Infarction

PubMed Central

Khattab, Ahmad; Islam, Mohammad Ariful; Hweij, Khaled Abou; Zeitouny, Joya; Waters, Renae; Sayegh, Malek; Hossain, Md Monowar; Paul, Arghya

2015-01-01

Cardiac tissue damage due to myocardial infarction (MI) is one of the leading causes of mortality worldwide. The available treatments of MI include pharmaceutical therapy, medical device implants, and organ transplants, all of which have severe limitations including high invasiveness, scarcity of donor organs, thrombosis or stenosis of devices, immune rejection, and prolonged hospitalization time. Injectable hydrogels have emerged as a promising solution for in situ cardiac tissue repair in infarcted hearts after MI. In this review, an overview of various natural and synthetic hydrogels for potential application as injectable hydrogels in cardiac tissue repair and regeneration is presented. The review starts with brief discussions about the pathology of MI, its current clinical treatments and their limitations, and the emergence of injectable hydrogels as a potential solution for post MI cardiac regeneration. It then summarizes various hydrogels, their compositions, structures and properties for potential application in post MI cardiac repair, and recent advancements in the application of injectable hydrogels in treatment of MI. Finally, the current challenges associated with the clinical application of injectable hydrogels to MI and their potential solutions are discussed to help guide the future research on injectable hydrogels for translational therapeutic applications in regeneration of cardiac tissue after MI. PMID:27668147

Oxide materials for spintronic device applications

NASA Astrophysics Data System (ADS)

Prestgard, Megan Campbell

Spintronic devices are currently being researched as next-generation alternatives to traditional electronics. Electronics, which utilize the charge-carrying capabilities of electrons to store information, are fundamentally limited not only by size constraints, but also by limits on current flow and degradation, due to electro-migration. Spintronics devices are able to overcome these limitations, as their information storage is in the spin of electrons, rather than their charge. By using spin rather than charge, these current-limiting shortcomings can be easily overcome. However, for spintronic devices to be fully implemented into the current technology industry, their capabilities must be improved. Spintronic device operation relies on the movement and manipulation of spin-polarized electrons, in which there are three main processes that must be optimized in order to maximize device efficiencies. These spin-related processes are: the injection of spin-polarized electrons, the transport and manipulation of these carriers, and the detection of spin-polarized currents. In order to enhance the rate of spin-polarized injection, research has been focused on the use of alternative methods to enhance injection beyond that of a simple ferromagnetic metal/semiconductor injector interface. These alternatives include the use of oxide-based tunnel barriers and the modification of semiconductors and insulators for their use as ferromagnetic injector materials. The transport of spin-polarized carriers is heavily reliant on the optimization of materials' properties in order to enhance the carrier mobility and to quench spin-orbit coupling (SOC). However, a certain degree of SOC is necessary in order to allow for the electric-field, gate-controlled manipulation of spin currents. Spin detection can be performed via both optical and electrical techniques. Using electrical methods relies on the conversion between spin and charge currents via SOC and is often the preferred method for device-based applications. This dissertation presents experimental results on the use of oxides for fulfilling the three spintronic device requirements. In the case of spin injection, the study of dilute magnetic dielectrics (DMDs) shows the importance of doping on the magnetic properties of the resulting tunnel barriers. The study of spin transport in ZnO has shown that, even at room temperature, the spin diffusion length is relatively long, on the order of 100 nm. These studies have also probed the spin relaxation mechanics in ZnO and have shown that Dyakonov-Perel spin relaxation, operating according to Fermi-Dirac statistics, is the dominant spin relaxation mechanism in zinc oxide. Finally, spin detection in ZnO has shown that, similar to other semiconductors, by modifying the resistivity of the ZnO thin films, the spin Hall angle (SHA) can be enhanced to nearly that of metals. This is possible by enhancing extrinsic SOC due to skew-scattering from impurities as well as phonons. In addition, thermal spin injection has also been detected using ZnO, which results support the independently measured inverse spin-Hall effect studies. The work represented herein illustrates that oxide materials have the potential to enhance spintronic device potential in all processes pertinent to spintronic applications.

A laser based reusable microjet injector for transdermal drug delivery

NASA Astrophysics Data System (ADS)

Han, Tae-hee; Yoh, Jack J.

2010-05-01

A laser based needle-free liquid drug injection device has been developed. A laser beam is focused inside the liquid contained in the rubber chamber of microscale. The focused laser beam causes explosive bubble growth, and the sudden volume increase in a sealed chamber drives a microjet of liquid drug through the micronozzle. The exit diameter of a nozzle is 125 μm and the injected microjet reaches an average velocity of 264 m/s. This device adds the time-varying feature of microjet to the current state of liquid injection for drug delivery.

Ion channel recordings on an injection-molded polymer chip.

PubMed

Tanzi, Simone; Matteucci, Marco; Christiansen, Thomas Lehrmann; Friis, Søren; Christensen, Mette Thylstrup; Garnaes, Joergen; Wilson, Sandra; Kutchinsky, Jonatan; Taboryski, Rafael

2013-12-21

In this paper, we demonstrate recordings of the ion channel activity across the cell membrane in a biological cell by employing the so-called patch clamping technique on an injection-molded polymer microfluidic device. The findings will allow direct recordings of ion channel activity to be made using the cheapest materials and production platform to date and with the potential for very high throughput. The employment of cornered apertures for cell capture allowed the fabrication of devices without through holes and via a scheme comprising master origination by dry etching in a silicon substrate, electroplating in nickel and injection molding of the final part. The most critical device parameters were identified as the length of the patching capillary and the very low surface roughness on the inside of the capillary. The cross-sectional shape of the orifice was found to be less critical, as both rectangular and semicircular profiles seemed to have almost the same ability to form tight seals with cells with negligible leak currents. The devices were functionally tested using human embryonic kidney cells expressing voltage-gated sodium channels (Nav1.7) and benchmarked against a commercial state-of-the-art system for automated ion channel recordings. These experiments considered current-voltage (IV) relationships for activation and inactivation of the Nav1.7 channels and their sensitivity to a local anesthetic, lidocaine. Both IVs and lidocaine dose-response curves obtained from the injection-molded polymer device were in good agreement with data obtained from the commercial system.

Hole injection and dielectric breakdown in 6H-SiC and 4H-SiC metal-oxide-semiconductor structures during substrate electron injection via Fowler-Nordheim tunneling

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2015-12-01

Hole injection into silicon dioxide (SiO2) films (8-40 nm thick) is investigated for the first time during substrate electron injection via Fowler-Nordheim (FN) tunneling in n-type 4H- and 6H-SiC (silicon carbide) based metal-oxide-semiconductor (MOS) structures at a wide range of temperatures (T) between 298 and 598 K and oxide electric fields Eox from 6 to 10 MV/cm. Holes are generated in heavily doped n-type polycrystalline silicon (n+ -polySi) gate serving as the anode as well as in the bulk silicon dioxide (SiO2) film via hot-electron initiated band-to-band ionization (BTBI). In absence of oxide trapped charges, it is shown that at a given temperature, the hole injection rates from either of the above two mechanisms are higher in n-4H-SiC MOS devices than those in n-6H-SiC MOS structures when compared at a given Eox and SiO2 thickness (tox). On the other hand, relative to n-4H-SiC devices, n-6H-SiC structures exhibit higher hole injection rates for a given tox during substrate electron injection at a given FN current density je,FN throughout the temperature range studied here. These two observations clearly reveal that the substrate material (n-6H-SiC and n-4H-SiC) dependencies on time-to-breakdown (tBD) or injected charge (electron) to breakdown (QBD) of the SiO2 film depend on the mode of FN injections (constant field/voltage and current) from the substrate which is further verified from the rigorous device simulation as well.

Plasmoids formation in a laboratory and large-volume flux closure during simulations of Coaxial Helicity Injection in NSTX-U

NASA Astrophysics Data System (ADS)

Ebrahimi, Fatima

2016-10-01

In NSTX-U, transient Coaxial Helicity Injection (CHI) is the primary method for current generation without reliance on the solenoid. A CHI discharge is generated by driving current along open field lines (the injector flux) that connect the inner and outer divertor plates on NSTX/NSTX-U, and has generated over 200 kA of toroidal current on closed flux surfaces in NSTX. Extrapolation of the concept to larger devices requires an improved understanding of the physics of flux closure and the governing parameters that maximizes the fraction of injected flux that is converted to useful closed flux. Here, through comprehensive resistive MHD NIMROD simulations conducted for the NSTX and NSTX-U geometries, two new major findings will be reported. First, formation of an elongated Sweet-Parker current sheet and a transition to plasmoid instability has for the first time been demonstrated by realistic global simulations. This is the first observation of plasmoid instability in a laboratory device configuration predicted by realistic MHD simulations and then supported by experimental camera images from NSTX. Second, simulations have now, for the first time, been able to show large fraction conversion of injected open flux to closed flux in the NSTX-U geometry. Consistent with the experiment, simulations also show that reconnection could occur at every stage of the helicity injection phase. The influence of 3D effects, and the parameter range that supports these important new findings is now being studied to understand the impact of toroidal magnetic field and the electron temperature, both of which are projected to increase in larger ST devices. Work supported by DOE DE-SC0010565.

Electrically Injected UV-Visible Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, George T.; Li, Changyi; Li, Qiming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasersmore » emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399more » nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.« less

Plasma response to sustainment with imposed-dynamo current drive in HIT-SI and HIT-SI3

NASA Astrophysics Data System (ADS)

Hossack, A. C.; Jarboe, T. R.; Chandra, R. N.; Morgan, K. D.; Sutherland, D. A.; Penna, J. M.; Everson, C. J.; Nelson, B. A.

2017-07-01

The helicity injected torus—steady inductive (HIT-SI) program studies efficient, steady-state current drive for magnetic confinement plasmas using a novel experimental method. Stable, high-beta spheromaks have been sustained using steady, inductive current drive. Externally induced loop voltage and magnetic flux are oscillated together so that helicity and power injection are always positive, sustaining the edge plasma current indefinitely. Imposed-dynamo current drive (IDCD) theory further shows that the entire plasma current is sustained. The method is ideal for low aspect ratio, toroidal geometries with closed flux surfaces. Experimental studies of spheromak plasmas sustained with IDCD have shown stable magnetic profiles with evidence of pressure confinement. New measurements show coherent motion of a stable spheromak in response to the imposed perturbations. On the original device two helicity injectors were mounted on either side of the spheromak and the injected mode spectrum was predominantly n  =  1. Coherent, rigid motion indicates that the spheromak is stable and a lack of plasma-generated n  =  1 energy indicates that the maximum q is maintained below 1 during sustainment. Results from the HIT-SI3 device are also presented. Three inductive helicity injectors are mounted on one side of the spheromak flux conserver. Varying the relative injector phasing changes the injected mode spectrum which includes n  =  2, 3, and higher modes.

Charge carrier transport and injection across organic heterojunctions

NASA Astrophysics Data System (ADS)

Tsang, Sai Wing

The discovery of highly efficient organic light-emitting diodes (OLEDs) in the 1980s has stimulated extensive research on organic semiconductors and devices. Underlying this breakthrough is the realization of the organic heterojunction (OH). Besides OLEDs, the implementation of the OH also significantly improves the power conversion efficiency in organic photovoltaic cells (OPVs). The continued technological advancements in organic electronic devices depend on the accumulation of knowledge of the intrinsic properties of organic materials and related interfaces. Among them, charge-carrier transport and carrier injection are two key factors that govern the performance of a device. This thesis mainly focuses on the charge carrier injection and transport at organic heterojunctions. The carrier transport properties of different organic materials used in this study are characterized by time-of-flight (TOF) and admittance spectroscopy (AS). An injection model is formulated by considering the carrier distribution at both sides of the interface. Using a steady-state simulation approach, the effect of accumulated charges on energy level alignment at OH is revealed. Instead of a constant injection barrier, it is found that the barrier varies with applied voltage. Moreover, an escape probability function in the injection model is modified by taking into account the total hopping rate and available hopping sites at the interface. The model predicts that the injection current at low temperature can be dramatically modified by an extremely small density of deep trap states. More importantly, the temperature dependence of the injection current is found to decrease with increasing barrier height. This suggests that extracting the barrier height from the J vs 1/T plot, as commonly employed in the literature, is problematic. These theoretical predictions are confirmed by a series of experiments on heterojunction devices with various barrier heights. In addition, the presence of deep trap states is also consistent with carrier mobility measurements at low temperature. From the point of view of application, an interface chemical doping method is proposed to engineer the carrier injection at an organic heterojunction. It is found that the injection current can be effectively increased or suppressed by introducing a thin (2 nm) doped organic layer at the interface. This technique is further extended to study the impact of an injection barrier at the OH, in OLEDs, on device performance. It is shown that a 0.3 eV injection barrier at the OH, that is normally negligible at metal/organic interface, can reduce the device efficiency by 25%. This is explained by the carrier distribution in the density-of-states at the OH. Furthermore, the carrier transport properties in a bulk heterojunction system are investigated. The bulk heterojunction consists of an interpenetrating network of a polymeric electron donor and a molecular electron acceptor. This material system has been studied in the last few years as an attractive power conversion efficiency (5% under AM 1.5) of OPV cells has been demonstrated. It is found that the electron mobility is greatly dependent on the thermal treatment of the film. Interfacial dipole effect at the heterojunction between the donor and the acceptor is proposed to be the determining factor that alters the carrier mobility in different nanoscale structures.

A current-driven resistive instability and its nonlinear effects in simulations of coaxial helicity injection in a tokamak

DOE PAGES

Hooper, E. B.; Sovinec, C. R.

2016-10-06

An instability observed in whole-device, resistive magnetohydrodynamic simulations of the driven phase of coaxial helicity injection in the National Spherical Torus eXperiment is identified as a current-driven resistive mode in an unusual geometry that transiently generates a current sheet. The mode consists of plasma flow velocity and magnetic field eddies in a tube aligned with the magnetic field at the surface of the injected magnetic flux. At low plasma temperatures (~10–20 eV), the mode is benign, but at high temperatures (~100 eV) its amplitude undergoes relaxation oscillations, broadening the layer of injected current and flow at the surface of themore » injected toroidal flux and background plasma. The poloidal-field structure is affected and the magnetic surface closure is generally prevented while the mode undergoes relaxation oscillations during injection. Furthermore, this study describes the mode and uses linearized numerical computations and an analytic slab model to identify the unstable mode.« less

Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures.

PubMed

Hlaing, Htay; Kim, Chang-Hyun; Carta, Fabio; Nam, Chang-Yong; Barton, Rob A; Petrone, Nicholas; Hone, James; Kymissis, Ioannis

2015-01-14

The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(-2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.

GaN-based superluminescent diodes with long lifetime

NASA Astrophysics Data System (ADS)

Castiglia, A.; Rossetti, M.; Matuschek, N.; Rezzonico, R.; Duelk, M.; Vélez, C.; Carlin, J.-F.; Grandjean, N.

2016-02-01

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their reliability. Optimized doping levels allow decreasing the operating voltage on single-mode devices from more than 6 V to less than 5 V for an injection current of 100 mA. Furthermore, maximum output powers as high as 350 mW (for an injection current of 500 mA) have been achieved in continuous-wave operation (CW) at room temperature. Modules with standard and optimized p-type layers were finally tested in terms of lifetime, at a constant output power of 10 mW, in CW operation and at a case temperature of 25 °C. The modules with non-optimized p-type doping showed a fast and remarkable increase in the drive current during the first hundreds of hours together with an increase of the device series resistance. No degradation of the electrical characteristics was observed over 2000 h on devices with optimized p-type layers. The estimated lifetime for those devices was longer than 5000 h.

Ex post manipulation of barriers in InGaAs tunnel injection devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talalaev, Vadim G.; Fock Institute of Physics, St. Petersburg State University, St. Petersburg 198504; Cirlin, George E.

Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

Usability of devices for self-injection: results of a formative study on a new disposable pen injector.

PubMed

Lange, Jakob; Richard, Philipp; Bradley, Nick

2014-01-01

This article presents a late-stage formative usability study of a pen-injector platform device. Such devices are used for the subcutaneous delivery of biopharmaceuticals, primarily for self-administration by the patient. The study was conducted with a broad user population, defined to represent user characteristics across a range of indications. The goals of the study were to confirm that the pen could be used without recurring patterns of use errors leading to hazardous situations, to evaluate the comprehension of the instructions for use (IFU), and to determine if training is necessary. In the study, a total of 36 participants in six groups (health care providers, caregivers, adolescents, diabetics with retinopathy, diabetics with neuropathy, and patients with arthritis) each read the IFU, prepared the device, and performed two simulated injections into an injection pad. Any use errors, near misses, or deviations from the IFU procedure were recorded. The overall success rate (injection completed by the participant without need for assistance) was 94% for the first and 100% for the second injection. Ninety-two percent of the participants reported that they felt confident using the device, 100% found the IFU helpful, and 75% found the device positively comfortable to use. Overall, a total average of 3.35 deviations and errors per user and injection were recorded (there were no near misses). Subtracting the errors without any potential for negative consequences for the injection or the user (trivial deviations), as well as those related to attaching and removing the pen needle (independent of the design of the pen itself), led to an average of 1.31 potentially relevant deviations per user and injection. It was concluded that the pen injector together with the IFU could be safely and efficiently used by all user groups without any training, and thus that the device and IFU in their current form are well suited for use in a range of specific applications.

Efficient spin-current injection in single-molecule magnet junctions

NASA Astrophysics Data System (ADS)

Xie, Haiqing; Xu, Fuming; Jiao, Hujun; Wang, Qiang; Liang, J.-Q.

2018-01-01

We study theoretically spin transport through a single-molecule magnet (SMM) in the sequential and cotunneling regimes, where the SMM is weakly coupled to one ferromagnetic and one normal-metallic leads. By a master-equation approach, it is found that the spin polarization injected from the ferromagnetic lead is amplified and highly polarized spin-current can be generated, due to the exchange coupling between the transport electron and the anisotropic spin of the SMM. Moreover, the spin-current polarization can be tuned by the gate or bias voltage, and thus an efficient spin injection device based on the SMM is proposed in molecular spintronics.

Large-volume flux closure during plasmoid-mediated reconnection in coaxial helicity injection

DOE Data Explorer

Ebrahimi, Fatima [Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)] (ORCID:0000000331095367); Raman, Roger [Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)] (ORCID:0000000220273271)

2016-01-01

A large-volume flux closure during transient coaxial helicity injection (CHI) in NSTX-U is demonstrated through resistive magnetohydrodynamics (MHD) simulations. Several major improvements, including the improved positioning of the divertor poloidal field coils, are projected to improve the CHI start-up phase in NSTX-U. Simulations in the NSTX-U configuration with constant in time coil currents show that with strong flux shaping the injected open field lines (injector flux) rapidly reconnect and form large volume of closed flux surfaces. This is achieved by driving parallel current in the injector flux coil and oppositely directed currents in the flux shaping coils to form a narrow injector flux footprint and push the injector flux into the vessel. As the helicity and plasma are injected into the device, the oppositely directed field lines in the injector region are forced to reconnect through a local Sweet–Parker type reconnection, or to spontaneously reconnect when the elongated current sheet becomes MHD unstable to form plasmoids. In these simulations for the first time, it is found that the closed flux is over 70% of the initial injector flux used to initiate the discharge. These results could work well for the application of transient CHI in devices that employ super conducting coils to generate and sustain the plasma equilibrium.

Large-volume flux closure during plasmoid-mediated reconnection in coaxial helicity injection

DOE Data Explorer

Ebrahimi, F. [Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States); Raman, R. [Princeton Plasma Physics Lab. (PPPL), Princeton, NJ (United States)

2016-04-01

A large-volume flux closure during transient coaxial helicity injection (CHI) in NSTX-U is demonstrated through resistive magnetohydrodynamics (MHD) simulations. Several major improvements, including the improved positioning of the divertor poloidal field coils, are projected to improve the CHI start-up phase in NSTX-U. Simulations in the NSTX-U configuration with constant in time coil currents show that with strong flux shaping the injected open field lines (injector flux) rapidly reconnect and form large volume of closed flux surfaces. This is achieved by driving parallel current in the injector flux coil and oppositely directed currents in the flux shaping coils to form a narrow injector flux footprint and push the injector flux into the vessel. As the helicity and plasma are injected into the device, the oppositely directed field lines in the injector region are forced to reconnect through a local Sweet–Parker type reconnection, or to spontaneously reconnect when the elongated current sheet becomes MHD unstable to form plasmoids. In these simulations for the first time, it is found that the closed flux is over 70% of the initial injector flux used to initiate the discharge. These results could work well for the application of transient CHI in devices that employ super conducting coils to generate and sustain the plasma equilibrium.

Nitride based quantum well light-emitting devices having improved current injection efficiency

DOEpatents

Tansu, Nelson; Zhao, Hongping; Liu, Guangyu; Arif, Ronald

2014-12-09

A III-nitride based device provides improved current injection efficiency by reducing thermionic carrier escape at high current density. The device includes a quantum well active layer and a pair of multi-layer barrier layers arranged symmetrically about the active layer. Each multi-layer barrier layer includes an inner layer abutting the active layer; and an outer layer abutting the inner layer. The inner barrier layer has a bandgap greater than that of the outer barrier layer. Both the inner and the outer barrier layer have bandgaps greater than that of the active layer. InGaN may be employed in the active layer, AlInN, AlInGaN or AlGaN may be employed in the inner barrier layer, and GaN may be employed in the outer barrier layer. Preferably, the inner layer is thin relative to the other layers. In one embodiment the inner barrier and active layers are 15 .ANG. and 24 .ANG. thick, respectively.

A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements

NASA Astrophysics Data System (ADS)

Bisoyi, Sibani; Rödel, Reinhold; Zschieschang, Ute; Kang, Myeong Jin; Takimiya, Kazuo; Klauk, Hagen; Tiwari, Shree Prakash

2016-02-01

A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm2 V-1 s-1. The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 1012 cm-2, despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior.

A THRESHOLD ANALYSIS OF THE TUNNEL INJECTION LASER.

DTIC Science & Technology

A new threshold analysis of the tunnel injection laser is given that differs from previous treatments in that an additional loss mechanism is...a slight increase in the threshold current density of the tunnel laser. For a device one millimeter long composed of GaAs at 77K, the threshold

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

NASA Technical Reports Server (NTRS)

Shieh, Tsay-Jiu

1989-01-01

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Magnetic-Field-Tunable Superconducting Rectifier

NASA Technical Reports Server (NTRS)

Sadleir, John E.

2009-01-01

Superconducting electronic components have been developed that provide current rectification that is tunable by design and with an externally applied magnetic field to the circuit component. The superconducting material used in the device is relatively free of pinning sites with its critical current determined by a geometric energy barrier to vortex entry. The ability of the vortices to move freely inside the device means this innovation does not suffer from magnetic hysteresis effects changing the state of the superconductor. The invention requires a superconductor geometry with opposite edges along the direction of current flow. In order for the critical current asymmetry effect to occur, the device must have different vortex nucleation conditions at opposite edges. Alternative embodiments producing the necessary conditions include edges being held at different temperatures, at different local magnetic fields, with different current-injection geometries, and structural differences between opposite edges causing changes in the size of the geometric energy barrier. An edge fabricated with indentations of the order of the coherence length will significantly lower the geometric energy barrier to vortex entry, meaning vortex passage across the device at lower currents causing resistive dissipation. The existing prototype is a two-terminal device consisting of a thin-film su - perconducting strip operating at a temperature below its superconducting transition temperature (Tc). Opposite ends of the strip are connected to electrical leads made of a higher Tc superconductor. The thin-film lithographic process provides an easy means to alter edge-structures, current-injection geo - metries, and magnetic-field conditions at the edges. The edge-field conditions can be altered by using local field(s) generated from dedicated higher Tc leads or even using the device s own higher Tc superconducting leads.

Effect of the electric field during annealing of organic light emitting diodes for improving its on/off ratio.

PubMed

Sharma, Rahul K; Katiyar, Monica; Rao, I V Kameshwar; Unni, K N Narayanan; Deepak

2016-01-28

If an organic light emitting diode is to be used as part of a matrix addressed array, it should exhibit low reverse leakage current. In this paper we present a method to improve the on/off ratio of such a diode by simultaneous application of heat and electric field post device fabrication. A green OLED with excellent current efficiency was seen to be suffering from a poor on/off ratio of 10(2). After examining several combinations of annealing along with the application of a reverse bias voltage, the on/off ratio of the same device could be increased by three orders of magnitude, specifically when the device was annealed at 80 °C under reverse bias (-15 V) followed by slow cooling also under the same bias. Simultaneously, the forward characteristics of the device were relatively unaffected. The reverse leakage in the OLED is mainly due to the injection of minority carriers in the hole transport layer (HTL) and the electron transport layer (ETL), in this case, of holes in tris-(8-hydroxyquinoline)aluminum(Alq3) and electrons in 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA). Hence, to investigate these layers adjacent to the electrodes, we fabricated their single layer devices. The possibility of bulk traps present adjacent to electrodes providing states for injection was ruled out after estimating the trap density both before and after the reverse biased annealing. The temperature independent current in reverse bias ruled out the possibility of thermionic injection. The origin of the reverse bias current is attributed to the availability of interfacial hole levels in Alq3 at the cathode work function level in the as-fabricated device; the suppression of the same being attributed to the fact that these levels in Alq3 are partly removed after annealing under an electric field.

Formation and dissipation of runaway current by MGI on J-TEXT

NASA Astrophysics Data System (ADS)

Wei, Yunong; Chen, Zhongyong; Huang, Duwei; Tong, Ruihai; Zhang, Xiaolong

2017-10-01

Plasma disruptions are one of the major concern for ITER. A large fraction of runaway current may be formed due to the avalanche generation of runaway electrons (REs) during disruptions and ruin the device structure. Experiments of runaway current formation and dissipation have been done on J-TEXT. Two massive gas injection (MGI) valves are used to form and dissipate the runaway current. Hot tail RE generation caused by the fast thermal quench leads to an abnormal formation of runaway current when the pre-TQ electron density increases in a range of 0.5-2-10 19m-3. 1020-22 quantities of He, Ne, Ar or Kr impurities are injected by MGI2 to dissipate the runaway current. He injection shows no obvious effect on runaway current dissipation in the experiments and Kr injection shows the best. The kinetic energy of REs and the magnetic energy of RE beam will affect the dissipation efficiency to a certain extent. Runaway current decay rate is found increasing quickly with the increase of the gas injection when the quantity is moderate, and then reaches to a saturation value with large quantity injection. A possible reason to explain the saturation of dissipation effect is the saturation of gas assimilation efficiency.

Usability of a new disposable autoinjector platform device: results of a formative study conducted with a broad user population.

PubMed

Lange, Jakob; Richard, Philipp; Bradley, Nick

2015-01-01

This article presents a late-stage formative usability study of an autoinjector platform device. Such devices are used for the subcutaneous delivery of biopharmaceuticals, primarily for self-administration by the patient. Previous usability work on autoinjectors reported in the literature has been specific to single indications. This study was instead conducted with a broad user population, defined to represent user characteristics across a range of indications. The goals of the study were to evaluate whether users could use the devices safely and effectively, and could understand the instructions for use (IFU) as well as the accompanying training. Further objectives were to capture any usability issues and to obtain participants' subjective ratings on the IFU and training as well as the confidence and comfort in using the device. A total of 43 participants in 5 groups received training and performed simulated injections either into an injection pad or a mannequin. All participants were able to successfully use the device. The device was well appreciated by all users, with a reported degree of confidence in using the device of 98%, of user comfort of 93%, and of comprehensibility of IFU and training of 98%. These values are higher than other comparable results reported in the literature. The presence of both audible and visible feedback during injection was seen to be a significant factor contributing to injection success. The observation that the device can be safely and efficiently used by all tested user groups provides confidence that the device and IFU in their current form will pass future summative testing in specific applications.

Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Wei-Chun; Chen, Hao-Wei

2018-06-01

This work demonstrates pentacene-based organic thin-film transistors (OTFTs) fabricated by inserting a 6,13-pentacenequinone (PQ) carrier injection layer between the source/drain (S/D) metal Au electrodes and pentacene channel layer. Compared to devices without a PQ layer, the performance characteristics including field-effect mobility, threshold voltage, and On/Off current ratio were significantly improved for the device with a 5-nm-thick PQ interlayer. These improvements are attributed to significant reduction of hole barrier height at the Au/pentacene channel interfaces. Therefore, it is believed that using PQ as the carrier injection layer is a good candidate to improve the pentacene-based OTFTs electrical performance.

Molecular interfaces for plasmonic hot electron photovoltaics

NASA Astrophysics Data System (ADS)

Pelayo García de Arquer, F.; Mihi, Agustín; Konstantatos, Gerasimos

2015-01-01

The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices.The use of self-assembled monolayers (SAMs) to improve and tailor the photovoltaic performance of plasmonic hot-electron Schottky solar cells is presented. SAMs allow the simultaneous control of open-circuit voltage, hot-electron injection and short-circuit current. To that end, a plurality of molecule structural parameters can be adjusted: SAM molecule's length can be adjusted to control plasmonic hot electron injection. Modifying SAMs dipole moment allows for a precise tuning of the open-circuit voltage. The functionalization of the SAM can also be selected to modify short-circuit current. This allows the simultaneous achievement of high open-circuit voltages (0.56 V) and fill-factors (0.58), IPCE above 5% at the plasmon resonance and maximum power-conversion efficiencies of 0.11%, record for this class of devices. Electronic supplementary information (ESI) available: Contact-potential differentiometry measurements, FTIR characterization, performance statistics and gold devices. See DOI: 10.1039/c4nr06356b

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

NASA Technical Reports Server (NTRS)

Schmidt, P.; Das, M. B.

1972-01-01

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Large-volume flux closure during plasmoid-mediated reconnection in coaxial helicity injection

DOE PAGES

Ebrahimi, F.; Raman, R.

2016-03-23

A large-volume flux closure during transient coaxial helicity injection (CHI) in NSTX-U is demonstrated through resistive magnetohydrodynamics (MHD) simulations. Several major improvements, including the improved positioning of the divertor poloidal field coils, are projected to improve the CHI start-up phase in NSTX-U. Simulations in the NSTX-U configuration with constant in time coil currents show that with strong flux shaping the injected open field lines (injector flux) rapidly reconnect and form large volume of closed flux surfaces. This is achieved by driving parallel current in the injector flux coil and oppositely directed currents in the flux shaping coils to form amore » narrow injector flux footprint and push the injector flux into the vessel. As the helicity and plasma are injected into the device, the oppositely directed field lines in the injector region are forced to reconnect through a local Sweet-Parker type reconnection, or to spontaneously reconnect when the elongated current sheet becomes MHD unstable to form plasmoids. In these simulations for the first time, it is found that the closed flux is over 70% of the initial injector flux used to initiate the discharge. Furthermore, these results could work well for the application of transient CHI in devices that employ super conducting coils to generate and sustain the plasma equilibrium.« less

Tunnel based spin injection devices for semiconductor spintronics

NASA Astrophysics Data System (ADS)

Jiang, Xin

This dissertation summarizes the work on spin-dependent electron transport and spin injection in tunnel based spintronic devices. In particular, it focuses on a novel three terminal hot electron device combining ferromagnetic metals and semiconductors---the magnetic tunnel transistor (MTT). The MTT has extremely high magnetic field sensitivity and is a useful tool to explore spin-dependent electron transport in metals, semiconductors, and at their interfaces over a wide energy range. In Chap. 1, the basic concept and fabrication of the MTT are discussed. Two types of MTTs, with ferromagnetic single and spin-valve base layers, respectively, are introduced and compared. In the following chapters, the transport properties of the MTT are discussed in detail, including the spin-dependent hot electron attenuation lengths in CoFe and NiFe thin films on GaAs (Chap. 2), the bias voltage dependence of the magneto-current (Chap. 3), the giant magneto-current effect in MTTs with a spin-valve base (Chap. 4), and the influence of non-magnetic seed layers on magneto-electronic properties of MTTs with a Si collector (Chap. 5). Chap. 6 concentrates on electrical injection of spin-polarized electrons into semiconductors, which is an essential ingredient in semiconductor spintronics. Two types of spin injectors are discussed: an MTT injector and a CoFe/MgO tunnel injector. The spin polarization of the injected electron current is detected optically by measuring the circular polarization of electroluminescence from a quantum well light emitting diode. Using an MTT injector a spin polarization of ˜10% is found for injection electron energy of ˜2 eV at 1.4K. This moderate spin polarization is most likely limited by significant electron spin relaxation at high energy. Much higher spin injection efficiency is obtained by using a CoFe/MgO tunnel injector with spin polarization values of ˜50% at 100K. The temperature and bias dependence of the electroluminescence polarization provides insight into spin relaxation mechanisms within the semiconductor heterostructure.

Autogenerator of beams of charged particles

DOEpatents

Adler, Richard J.; Mazarakis, Michael G.; Miller, Robert B.; Shope, Steven L.; Smith, David L.

1986-01-01

An autogenerating apparatus provides secondary intense relativistic current beam pulses in response to an injected beam pulse. One or more electromagnetic energy storage devices are provided in conjunction with gaps along a beam propagation path for the injected beam pulse. For injected beam pulses which are no longer than double the transit time of electromagnetic waves within the storage devices (which may be resonant cavities), distinct secondary beam pulses are generated by each of the energy storage devices. The beam propagation path, together with the one or more gaps provided therein, operates as a pulse forming transmission line cavity, in which the separate cavities associated with the gaps provide delays for electromagnetic waves generated at the gaps. After doubly traversing the cavity, the electromagnetic waves cause the gap to generate the secondary beam pulses, which are thus delayed by a time interval equal to the double transit time for the induced wave within the cavity.

Autogenerator of beams of charged particles

DOEpatents

Adler, R.J.; Mazarakis, M.G.; Miller, R.M.; Shope, S.L.; Smith, D.L.

1983-10-31

An autogenerating apparatus provides secondary intense relativistic current beam pulses in response to an injected beam pulse. One or more electromagnetic energy storage devices are provided in conjunction with gaps along a beam propagation path for the injected beam pulse. For injected beam pulses which are no longer than double the transit time of electromagnetic waves within the storage devices (which may be resonant cavities), distinct secondary beam pulses are generated by each of the energy storage devices. The beam propagation path, together with the one or more gaps provided therein, operates as a pulse forming transmission line cavity, in which the separate cavities associated with the gaps provide delays for electromagnetic waves generated at the gaps. After doubly traversing the cavity, the electromagnetic waves cause the gap to generate the secondary beam pulses, which are thus delayed by a time interval equal to the double transit time for the induced wave within the cavity.

Coherent Control of Nanoscale Ballistic Currents in Transition Metal Dichalcogenide ReS2.

PubMed

Cui, Qiannan; Zhao, Hui

2015-04-28

Transition metal dichalcogenides are predicted to outperform traditional semiconductors in ballistic devices with nanoscale channel lengths. So far, experimental studies on charge transport in transition metal dichalcogenides are limited to the diffusive regime. Here we show, using ReS2 as an example, all-optical injection, detection, and coherent control of ballistic currents. By utilizing quantum interference between one-photon and two-photon interband transition pathways, ballistic currents are injected in ReS2 thin film samples by a pair of femtosecond laser pulses. We find that the current decays on an ultrafast time scale, resulting in an electron transport of only a fraction of one nanometer. Following the relaxation of the initially injected momentum, backward motion of the electrons for about 1 ps is observed, driven by the Coulomb force from the oppositely moved holes. We also show that the injected current can be controlled by the phase of the laser pulses. These results demonstrate a new platform to study ballistic transport of nonequilibrium carriers in transition metal dichalcogenides.

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Heating and current drive on NSTX

NASA Astrophysics Data System (ADS)

Wilson, J. R.; Batchelor, D.; Carter, M.; Hosea, J.; Ignat, D.; LeBlanc, B.; Majeski, R.; Ono, M.; Phillips, C. K.; Rogers, J. H.; Schilling, G.

1997-04-01

Low aspect ratio tokamaks pose interesting new challenges for heating and current drive. The NSTX (National Spherical Tokamak Experiment) device to be built at Princeton is a low aspect ratio toroidal device that has the achievement of high toroidal beta (˜45%) and non-inductive operation as two of its main research goals. To achieve these goals significant auxiliary heating and current drive systems are required. Present plans include ECH (Electron cyclotron heating) for pre-ionization and start-up assist, HHFW (high harmonic fast wave) for heating and current drive and eventually NBI (neutral beam injection) for heating, current drive and plasma rotation.

Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Bongjun; Liang, Kelly; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu

We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors suchmore » as enhanced on-current are also observed.« less

Multi-transmitter/multi-receiver high-speed measurements of soil resistivity and induced polarization - Hydrological application

NASA Astrophysics Data System (ADS)

Gance, Julien; Texier, Benoît; Leite, Orlando; Bernard, Jean; Truffert, Catherine; Lebert, François; Yamashita, Yoshihiro

2016-04-01

Electrical resistivity tomography (ERT) is an adapted tool for the monitoring of soil moisture variations in aquifers (Binley et al., 2015). Nevertheless, in some specific cases, like for highly permeable soils or fractured aquifers, the measurements from the device can be slower than the water flow through the entire investigated zone. Therefore, the monitoring of such phenomena cannot be performed with classical devices. In such cases, we require a high-speed measurement of soils resistivity. Since 20 years, the speed of acquisition of the resistivity meters has been improved by the development of multi-channel devices allowing to perform multi-electrode (> 4) measurements. The switching capabilities of the actual devices allow to measure over long profiles up to hundreds of electrodes only using one transmitter. Based on this multi-receiver technology and on previous work from Yamashita et al. (2013), authors have developed a 250 W multi-transmitter device for the high speed measurement of resistivity and induced polarization. Current is therefore injected simultaneously in the soil through six injection electrodes. The injected current is coded for each transmitter using Code Division Multiple Access (CDMA, Yamashita et al., 2014) so that the different voltages induced by each sources can be reconstructed from the total potential measurement signal at each receiver, allowing to save acquisition time. The first operational prototype features 3 transmitters and 6 receivers. Its performances are compared to a mono-transmitter device for different sequences of acquisition in 2D and 3D configurations both in theory and on real field data acquired on a shallow sedimentary aquifer in the Loire valley in France. This device is promising for the accurate monitoring of rapid water flows in heterogeneous aquifers.

[Development of Biliary Contrast Agents Remote Pushing Device].

PubMed

Zhu, Haoyang; Dong, Dinghui; Luo, Yu; Ren, Fenggang; Zhang, Jing; Tan, Wenjun; Shi, Aihua; Hu, Liangshuo; Wu, Rongqian; Lyu, Yi

2018-01-30

A biliary contrast agents pushing device, including a syringe pushing system and a remote controller is introduced. The syringe pushing system comprises an injector card slot, a support platform and an injection bolus fader. A 20 mL syringe can be fitted on the syringe pushing system and kept with the ground about 30 degree. This system can perform air bubble pumping back and contrast agents bolus injection as well as speed adjustment. Remote controller is an infrared remote control which can start and stop the syringe pushing system. With this device, the remote controlled cholangiography technology can be achieved, which can not only protect doctors from X-ray radiation but also improve the traditional T-tube cholangiography and the contrast effect, reduce postoperative complications in patients as well. The application of this device will improve the current diagnosis and treatment system, the device will benefit the majority of doctors and patients.

Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

NASA Astrophysics Data System (ADS)

Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

2017-08-01

In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

Formative usability evaluation of a fixed-dose pen-injector platform device

PubMed Central

Lange, Jakob; Nemeth, Tobias

2018-01-01

Background This article for the first time presents a formative usability study of a fixed-dose pen injector platform device used for the subcutaneous delivery of biopharmaceuticals, primarily for self-administration by the patient. The study was conducted with a user population of both naïve and experienced users across a range of ages. The goals of the study were to evaluate whether users could use the devices safely and effectively relying on the instructions for use (IFU) for guidance, as well as to benchmark the device against another similar injector established in the market. Further objectives were to capture any usability issues and obtain participants’ subjective ratings on the properties and performance of both devices. Methods A total of 20 participants in three groups studied the IFU and performed simulated injections into an injection pad. Results All participants were able to use the device successfully. The device was well appreciated by all users with, maximum usability feedback scores reported by 90% or more on handling forces and device feedback, and by 85% or more on fit and grip of the device. The presence of clear audible and visible feedbacks upon successful loading of a dose and completion of injection was seen to be a significant improvement over the benchmark injector. Conclusion The observation that the platform device can be safely and efficiently used by all user groups provides confidence that the device and IFU in their current form will pass future summative testing in specific applications. PMID:29670411

Spin injection devices with high mobility 2DEG channels (Conference Presentation)

NASA Astrophysics Data System (ADS)

Ciorga, Mariusz; Oltscher, Martin; Kuczmik, Thomas; Loher, Josef; Bayer, Andreas; Schuh, Dieter; Bougeard, Dominique; Weiss, Dieter

2016-10-01

Effective electrical spin injection into two-dimensional electron gas (2DEG) is a prerequisite for many new functionalities in spintronic device concepts, with the Datta-Das spin field effect transistor [1] being a primary example. Here we will discuss some of the results of our studies on spin injection devices with high mobility 2DEG confined in an inverted AlGaAs/GaAs heterojunction and a diluted ferromagnetic semiconductor (Ga,Mn)As employed as a source and a detector of spin-polarized carriers. Firstly we will show that nonlocal spin valve signal in such devices can significantly exceed the prediction of the standard model of spin injection based on spin drift-diffusion equations [2], what leads to conclusion that ballistic transport in the 2D region directly below the injector should be taken into account to fully describe the spin injection process [3]. Furthermore, we demonstrate also a large magnetoresistance (MR) signal of 20% measured in local configuration, i.e., with spin-polarized current flowing between two ferromagnetic contacts. To our knowledge, this is the highest value of MR observed so far in semiconductor channels. The work has been supported by Deutsche Forschungsgemeinschaft (DFG) through SFB689. [1] S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990) [2] M. Oltscher et al., Phys. Rev. Lett. 113, 236602 (2014) [3] K. Cheng and S. Zhang, Phys. Rev. B 92, 214402 (2015)

Double-injection, deep-impurity switch development

NASA Technical Reports Server (NTRS)

Selim, F. A.; Whitson, D. W.

1983-01-01

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Electrical Spin Injection and Detection in Silicon Nanowires with Axial Doping Gradient.

PubMed

Kountouriotis, Konstantinos; Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

2018-06-19

The interest in spin transport in nanoscopic semiconductor channels is driven by both the inevitable miniaturization of spintronics devices toward nanoscale and the rich spin-dependent physics the quantum confinement engenders. For such studies, the all-important issue of the ferromagnet/semiconductor (FM/SC) interface becomes even more critical at nanoscale. Here we elucidate the effects of the FM/SC interface on electrical spin injection and detection at nanoscale dimensions, utilizing a unique type of Si nanowires (NWs) with an inherent axial doping gradient. Two-terminal and nonlocal four-terminal lateral spin-valve measurements were performed using different combinations from a series of FM contacts positioned along the same NW. The data are analyzed with a general model of spin accumulation in a normal channel under electrical spin injection from a FM, which reveals a distinct correlation of decreasing spin-valve signal with increasing injector junction resistance. The observation is attributed to the diminishing contribution of the d-electrons in the FM to the injected current spin polarization with increasing Schottky barrier width. The results demonstrate that there is a window of interface parameters for optimal spin injection efficiency and current spin polarization, which provides important design guidelines for nanospintronic devices with quasi-one-dimensional semiconductor channels.

Transfer impedance measurements of the space shuttle Solid Rocket Motor (SRM) joints, wire meshes and a carbon graphite motor case

NASA Technical Reports Server (NTRS)

Papazian, Peter B.; Perala, Rodney A.; Curry, John D.; Lankford, Alan B.; Keller, J. David

1988-01-01

Using three different current injection methods and a simple voltage probe, transfer impedances for Solid Rocket Motor (SRM) joints, wire meshes, aluminum foil, Thorstrand and a graphite composite motor case were measured. In all cases, the surface current distribution for the particular current injection device was calculated analytically or by finite difference methods. The results of these calculations were used to generate a geometric factor which was the ratio of total injected current to surface current density. The results were validated in several ways. For wire mesh measurements, results showed good agreement with calculated results for a 14 by 18 Al screen. SRM joint impedances were independently verified. The filiment wound case measurement results were validated only to the extent that their curve shape agrees with the expected form of transfer impedance for a homogeneous slab excited by a plane wave source.

Spectral linewidth of spin-current nano-oscillators driven by nonlocal spin injection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demidov, V. E., E-mail: demidov@uni-muenster.de; Divinskiy, B.; Urazhdin, S.

2015-11-16

We study experimentally the auto-oscillation characteristics of magnetic nano-oscillators driven by pure spin currents generated by nonlocal spin injection. By combining micro-focus Brillouin light scattering spectroscopy with electronic microwave spectroscopy, we are able to simultaneously perform both the spatial and the high-resolution spectral analyses of auto-oscillations induced by spin current. We find that the devices exhibit a highly coherent dynamics with the spectral linewidth of a few megahertz at room temperature. This narrow linewidth can be achieved over a wide range of operational frequencies, demonstrating a significant potential of nonlocal oscillators for applications.

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

PubMed

Lee, Hyungjin; Lee, Donghwa; Ahn, Yumi; Lee, Eun-Woo; Park, Lee Soon; Lee, Youngu

2014-08-07

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

Design and evaluation of wide-range and low-power analog front-end enabling body-implanted devices to monitor charge injection properties

NASA Astrophysics Data System (ADS)

Ito, Keita; Uno, Shoma; Goto, Tatsuya; Takezawa, Yoshiki; Harashima, Takuya; Morikawa, Takumi; Nishino, Satoru; Kino, Hisashi; Kiyoyama, Koji; Tanaka, Tetsu

2017-04-01

For safe electrical stimulation with body-implanted devices, the degradation of stimulus electrodes must be considered because it causes the unexpected electrolysis of water and the destruction of tissues. To monitor the charge injection property (CIP) of stimulus electrodes while these devices are implanted, we have proposed a charge injection monitoring system (CIMS). CIMS can safely read out voltages produced by a biphasic current pulse to a stimulus electrode and CIP is calculated from waveforms of the acquired voltages. In this paper, we describe a wide-range and low-power analog front-end (AFE) for CIMS that has variable gain-frequency characteristics and low-power analog-to-digital (A/D) conversion to adjust to the degradation of stimulus electrodes. The designed AFE was fabricated with 0.18 µm CMOS technology and achieved a valuable gain of 20-60 dB, an upper cutoff frequency of 0.2-10 kHz, and low-power interleaving A/D conversion. In addition, we successfully measured the CIP of stimulus electrodes for body-implanted devices using CIMS.

Lightning Pin Injection Testing on MOSFETS

NASA Technical Reports Server (NTRS)

Ely, Jay J.; Nguyen, Truong X.; Szatkowski, George N.; Koppen, Sandra V.; Mielnik, John J.; Vaughan, Roger K.; Wysocki, Philip F.; Celaya, Jose R.; Saha, Sankalita

2009-01-01

Lightning transients were pin-injected into metal-oxide-semiconductor field-effect transistors (MOSFETs) to induce fault modes. This report documents the test process and results, and provides a basis for subsequent lightning tests. MOSFETs may be present in DC-DC power supplies and electromechanical actuator circuits that may be used on board aircraft. Results show that unprotected MOSFET Gates are susceptible to failure, even when installed in systems in well-shielded and partial-shielded locations. MOSFET Drains and Sources are significantly less susceptible. Device impedance decreased (current increased) after every failure. Such a failure mode may lead to cascading failures, as the damaged MOSFET may allow excessive current to flow through other circuitry. Preliminary assessments on a MOSFET subjected to 20-stroke pin-injection testing demonstrate that Breakdown Voltage, Leakage Current and Threshold Voltage characteristics show damage, while the device continues to meet manufacturer performance specifications. The purpose of this research is to develop validated tools, technologies, and techniques for automated detection, diagnosis and prognosis that enable mitigation of adverse events during flight, such as from lightning transients; and to understand the interplay between lightning-induced surges and aging (i.e. humidity, vibration thermal stress, etc.) on component degradation.

Trap-assisted hole injection and quantum efficiency enhancement in poly(9,9' dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Seeley, Alexander J. A. B.; Friend, Richard H.; Kim, Ji-Seon; Burroughes, Jeremy H.

2004-12-01

We report a reversible many-fold quantum efficiency enhancement during electrical driving of polymer light-emitting diodes (LEDs) containing poly(9,9' dioctylfluorene-alt-benzothiadiazole) (F8BT), developing over several minutes or hours at low applied bias and recovering on similar time scales after driving. This phenomenon is observed only in devices containing F8BT as an emissive layer in pure or blended form, regardless of anode and cathode choices and even in the absence of a poly(styrene-sulphonate)-doped poly(3,4-ethylene-dioxythiophene) (PEDOT:PSS) layer. We report detailed investigations using a standardized device structure containing PEDOT:PSS and a calcium cathode. Direct measurements of trapped charge recovered from the device after driving significantly exceed the unipolar limit, and thermally activated relaxation suggests a maximum trap depth around 0.6eV. Neither photoluminescence nor electroluminescence spectra reveal any change in the bulk optoelectronic properties of the emissive polymer nor any new emissive species. During the quantum efficiency (QE) enhancement process, the bulk conduction of the device increases. Reverse bias treatment of the device significantly reinforces the QE enhancement. Based on these observations, we propose a simple model in which interfacial dipoles are generated by trapped holes near the anode combining with injected electrons, to produce a narrow tunneling barrier for easy hole injection. The new injection pathway leads to a higher hole current density and thus a better charge injection balance. This produces the relatively high quantum efficiency observed in all F8BT LEDs.

Bright Visible-Infrared Light Emitting Diodes Based on Hybrid Halide Perovskite with Spiro-OMeTAD as a Hole-Injecting Layer.

PubMed

Jaramillo-Quintero, Oscar A; Sanchez, Rafael S; Rincon, Marina; Mora-Sero, Ivan

2015-05-21

Hybrid halide perovskites that are currently intensively studied for photovoltaic applications, also present outstanding properties for light emission. Here, we report on the preparation of bright solid state light emitting diodes (LEDs) based on a solution-processed hybrid lead halide perovskite (Pe). In particular, we have utilized the perovskite generally described with the formula CH3NH3PbI(3-x)Cl(x) and exploited a configuration without electron or hole blocking layer in addition to the injecting layers. Compact TiO2 and Spiro-OMeTAD were used as electron and hole injecting layers, respectively. We have demonstrated a bright combined visible-infrared radiance of 7.1 W·sr(-1)·m(-2) at a current density of 232 mA·cm(-2), and a maximum external quantum efficiency (EQE) of 0.48%. The devices prepared surpass the EQE values achieved in previous reports, considering devices with just an injecting layer without any additional blocking layer. Significantly, the maximum EQE value of our devices is obtained at applied voltages as low as 2 V, with a turn-on voltage as low as the Pe band gap (V(turn-on) = 1.45 ± 0.06 V). This outstanding performance, despite the simplicity of the approach, highlights the enormous potentiality of Pe-LEDs. In addition, we present a stability study of unsealed Pe-LEDs, which demonstrates a dramatic influence of the measurement atmosphere on the performance of the devices. The decrease of the electroluminescence (EL) under continuous operation can be attributed to an increase of the non-radiative recombination pathways, rather than a degradation of the perovskite material itself.

Bistable optical devices with laser diodes coupled to absorbers of narrow spectral bandwidth.

PubMed

Maeda, Y

1994-06-20

An optical signal inverter was demonstrated with a combination of the following two effects: One is the decrease of the transmission of an Er-doped YAG crystal with increasing red shift of a laser diode resulting from an increase in the injection current, and the other is a negative nonlinear absorption in which the transmission decreases inversely with increasing laser intensity. Because a hysteresis characteristic exists in the relationship between the wavelength and the injection current of the laser diode, an optical bistability was observed in this system.

MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

ScienceCinema

Palmstrom, Chris [University of California, Santa Barbara, California, United States

2017-12-09

Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

Design of photonic crystal surface emitting lasers with indium-tin-oxide top claddings

NASA Astrophysics Data System (ADS)

Huang, Shen-Che; Hong, Kuo-Bin; Chiu, Han-Lun; Lan, Shao-Wun; Chang, Tsu-Chi; Li, Heng; Lu, Tien-Chang

2018-02-01

Electrically pumped GaAs-based photonic crystal surface emitting lasers were fabricated using a simple fabrication process by directly capping the indium-tin-oxide transparent conducting thin film as the top cladding layer upon a photonic crystal layer. Optimization of the separate-confinement heterostructures of a laser structure is crucial to improving characteristics by providing advantageous optical confinements. The turn-on voltage, series resistance, threshold current, and slope efficiency of the laser with a 100 × 100 μm2 photonic crystal area operated at room temperature were 1.3 V, 1.5 Ω, 121 mA, and 0.2 W/A, respectively. Furthermore, we demonstrated a single-lobed lasing wavelength of 928.6 nm at 200 mA and a wavelength redshift rate of 0.05 nm/K in temperature-dependent measurements. The device exhibited the maximum output power of approximately 400 mW at an injection current of 2 A; moreover, divergence angles of less than 1° for the unpolarized circular-shaped laser beam were measured at various injection currents. Overall, the low threshold current, excellent beam quality, small divergence, high output power, and high-operating-temperature (up to 343 K) of our devices indicate that they can potentially fill the requirements for next-generation light sources and optoelectronic devices.

Charge Transport in Spiro-OMeTAD Investigated through Space-Charge-Limited Current Measurements

NASA Astrophysics Data System (ADS)

Röhr, Jason A.; Shi, Xingyuan; Haque, Saif A.; Kirchartz, Thomas; Nelson, Jenny

2018-04-01

Extracting charge-carrier mobilities for organic semiconductors from space-charge-limited conduction measurements is complicated in practice by nonideal factors such as trapping in defects and injection barriers. Here, we show that by allowing the bandlike charge-carrier mobility, trap characteristics, injection barrier heights, and the shunt resistance to vary in a multiple-trapping drift-diffusion model, a numerical fit can be obtained to the entire current density-voltage curve from experimental space-charge-limited current measurements on both symmetric and asymmetric 2 ,2',7 ,7' -tetrakis(N ,N -di-4-methoxyphenylamine)-9 ,9' -spirobifluorene (spiro-OMeTAD) single-carrier devices. This approach yields a bandlike mobility that is more than an order of magnitude higher than the effective mobility obtained using analytical approximations, such as the Mott-Gurney law and the moving-electrode equation. It is also shown that where these analytical approximations require a temperature-dependent effective mobility to achieve fits, the numerical model can yield a temperature-, electric-field-, and charge-carrier-density-independent mobility. Finally, we present an analytical model describing trap-limited current flow through a semiconductor in a symmetric single-carrier device. We compare the obtained charge-carrier mobility and trap characteristics from this analytical model to the results from the numerical model, showing excellent agreement. This work shows the importance of accounting for traps and injection barriers explicitly when analyzing current density-voltage curves from space-charge-limited current measurements.

Study of charge transport in composite blend of P3HT and PCBM

NASA Astrophysics Data System (ADS)

Kumar, Manoj; Kumar, Sunil; Upadhyaya, Aditi; Yadav, Anjali; Gupta, Saral K.; Singh, Amarjeet

2018-05-01

Poly (3-hexylthiophene-2,5diyl) (P3HT) as donor and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as acceptor are mostly used as active medium in polymeric electronic device. In this paper we have prepare the P3HT - PCBM based bulk hetero junction thin films by spin coating technique. The charge transport properties of P3HT:PCBM blends are investigated by the current-voltage measurements using Ag as an electron injecting electrode and ITO as a hole injecting contact. The current density v/s voltage relationships are analyzed in the backdrop of Schottky and Space charge limited current model.

Demonstration of Tokamak Ohmic Flux Saving by Transient Coaxial Helicity Injection in the National Spherical Torus Experiment

NASA Astrophysics Data System (ADS)

Raman, R.; Mueller, D.; Nelson, B. A.; Jarboe, T. R.; Gerhardt, S.; Kugel, H. W.; Leblanc, B.; Maingi, R.; Menard, J.; Ono, M.; Paul, S.; Roquemore, L.; Sabbagh, S.; Soukhanovskii, V.

2010-03-01

Transient coaxial helicity injection (CHI) started discharges in the National Spherical Torus Experiment (NSTX) have attained peak currents up to 300 kA and when coupled to induction, it has produced up to 200 kA additional current over inductive-only operation. CHI in NSTX has shown to be energetically quite efficient, producing a plasma current of about 10 A/J of capacitor bank energy. In addition, for the first time, the CHI-produced toroidal current that couples to induction continues to increase with the energy supplied by the CHI power supply at otherwise similar values of the injector flux, indicating the potential for substantial current generation capability by CHI in NSTX and in future toroidal devices.

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinjo, Hidekazu, E-mail: kinjou.h-lk@nhk.or.jp; Machida, Kenji; Aoshima, Ken-ichi

2014-05-28

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

Performance Enhancement of Organic Light-Emitting Diodes Using Electron-Injection Materials of Metal Carbonates

NASA Astrophysics Data System (ADS)

Shin, Jong-Yeol; Kim, Tae Wan; Kim, Gwi-Yeol; Lee, Su-Min; Shrestha, Bhanu; Hong, Jin-Woong

2016-05-01

Performance of organic light-emitting diodes was investigated depending on the electron-injection materials of metal carbonates (Li2CO3 and Cs2CO3 ); and number of layers. In order to improve the device efficiency, two types of devices were manufactured by using the hole-injection material (Teflon-amorphous fluoropolymer -AF) and electron-injection materials; one is a two-layer reference device ( ITO/Teflon-AF/Alq3/Al ) and the other is a three-layer device (ITO/Teflon-AF/Alq3/metal carbonate/Al). From the results of the efficiency for the devices with hole-injection layer and electron-injection layer, it was found that the electron-injection layer affects the electrical properties of the device more than the hole-injection layer. The external-quantum efficiency for the three-layer device with Li2CO3 and Cs2CO3 layer is improved by approximately six and eight times, respectively, compared with that of the two-layer reference device. It is thought that a use of electron-injection layer increases recombination rate of charge carriers by the active injection of electrons and the blocking of holes.

Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Movassaghi, Yashar; Fathipour, Morteza; Fathipour, Vala

2016-03-21

This paper describes comprehensive analytical and simulation models for the design and optimization of the electron-injection based detectors. The electron-injection detectors evaluated here operate in the short-wave infrared range and utilize a type-II band alignment in InP/GaAsSb/InGaAs material system. The unique geometry of detectors along with an inherent negative-feedback mechanism in the device allows for achieving high internal avalanche-free amplifications without any excess noise. Physics-based closed-form analytical models are derived for the detector rise time and dark current. Our optical gain model takes into account the drop in the optical gain at high optical power levels. Furthermore, numerical simulation studiesmore » of the electrical characteristics of the device show good agreement with our analytical models as well experimental data. Performance comparison between devices with different injector sizes shows that enhancement in the gain and speed is anticipated by reducing the injector size. Sensitivity analysis for the key detector parameters shows the relative importance of each parameter. The results of this study may provide useful information and guidelines for development of future electron-injection based detectors as well as other heterojunction photodetectors.« less

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Recent Advances in Alternating Current-Driven Organic Light-Emitting Devices.

PubMed

Pan, Yufeng; Xia, Yingdong; Zhang, Haijuan; Qiu, Jian; Zheng, Yiting; Chen, Yonghua; Huang, Wei

2017-11-01

Organic light-emitting devices (OLEDs), typically operated with constant-voltage or direct-current (DC) power sources, are candidates for next-generation solid-state lighting and displays, as they are light, thin, inexpensive, and flexible. However, researchers have focused mainly on the device itself (e.g., development of novel materials, design of the device structure, and optical outcoupling engineering), and little attention has been paid to the driving mode. Recently, an alternative concept to DC-driven OLEDs by directly driving devices using time-dependent voltages or alternating current (AC) has been explored. Here, the effects of different device structures of AC-driven OLEDs, for example, double-insulation, single-insulation, double-injection, and tandem structure, on the device performance are systematically investigated. The formation of excitons and the dielectric layer, which are important to achieve high-performance AC-driven OLEDs, are carefully considered. The importance of gaining further understanding of the fundamental properties of AC-driven OLEDs is then discussed, especially as they relate to device physics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

NASA Astrophysics Data System (ADS)

Lim, Jaehoon; Park, Young-Shin; Klimov, Victor I.

2018-01-01

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge--realization of lasing with electrical injection--remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, we apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm-2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm-2 we achieve the population inversion of the band-edge states.

Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C

NASA Astrophysics Data System (ADS)

Ishii, Hajime; Ueno, Hiroaki; Ueda, Tetsuzo; Endoh, Tetsuo

2018-06-01

In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (I dmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% I dmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (g m) peak of the g m–V g characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

Enhanced Control for Local Helicity Injection on the Pegasus ST

NASA Astrophysics Data System (ADS)

Pierren, C.; Bongard, M. W.; Fonck, R. J.; Lewicki, B. T.; Perry, J. M.

2017-10-01

Local helicity injection (LHI) experiments on Pegasus rely upon programmable control of a 250 MVA modular power supply system that drives the electromagnets and helicity injection systems. Precise control of the central solenoid is critical to experimental campaigns that test the LHI Taylor relaxation limit and the coupling efficiency of LHI-produced plasmas to Ohmic current drive. Enhancement and expansion of the present control system is underway using field programmable gate array (FPGA) technology for digital logic and control, coupled to new 10 MHz optical-to-digital transceivers for semiconductor level device communication. The system accepts optical command signals from existing analog feedback controllers, transmits them to multiple devices in parallel H-bridges, and aggregates their status signals for fault detection. Present device-level multiplexing/de-multiplexing and protection logic is extended to include bridge-level protections with the FPGA. An input command filter protects against erroneous and/or spurious noise generated commands that could otherwise cause device failures. Fault registration and response times with the FPGA system are 25 ns. Initial system testing indicates an increased immunity to power supply induced noise, enabling plasma operations at higher working capacitor bank voltage. This can increase the applied helicity injection drive voltage, enable longer pulse lengths and improve Ohmic loop voltage control. Work supported by US DOE Grant DE-FG02-96ER54375.

Electrical Characterization of 3D Au Microelectrodes for Use in Retinal Prostheses.

PubMed

Lee, Sangmin; Ahn, Jae Hyun; Seo, Jong-Mo; Chung, Hum; Cho, Dong-Il Dan

2015-06-17

In order to provide high-quality visual information to patients who have implanted retinal prosthetic devices, the number of microelectrodes should be large. As the number of microelectrodes is increased, the dimensions of each microelectrode must be decreased, which in turn results in an increased microelectrode interface impedance and decreased injection current dynamic range. In order to improve the trade-off envelope between the number of microelectrodes and the current injection characteristics, a 3D microelectrode structure can be used as an alternative. In this paper, the electrical characteristics of 2D and 3D Au microelectrodes were investigated. In order to examine the effects of the structural difference, 2D and 3D Au microelectrodes with different base areas but similar effective surface areas were fabricated and evaluated. Interface impedances were measured and similar dynamic ranges were obtained for both 2D and 3D Au microelectrodes. These results indicate that more electrodes can be implemented in the same area if 3D designs are used. Furthermore, the 3D Au microelectrodes showed substantially enhanced electrical durability characteristics against over-injected stimulation currents, withstanding electrical currents that are much larger than the limit measured for 2D microelectrodes of similar area. This enhanced electrical durability property of 3D Au microelectrodes is a new finding in microelectrode research, and makes 3D microelectrodes very desirable devices.

21 CFR 872.4730 - Dental injecting needle.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Dental injecting needle. 872.4730 Section 872.4730...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4730 Dental injecting needle. (a) Identification. A dental injecting needle is a slender, hollow metal device with a sharp point intended to be attached to a...

21 CFR 872.4730 - Dental injecting needle.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Dental injecting needle. 872.4730 Section 872.4730...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4730 Dental injecting needle. (a) Identification. A dental injecting needle is a slender, hollow metal device with a sharp point intended to be attached to a...

21 CFR 872.4730 - Dental injecting needle.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Dental injecting needle. 872.4730 Section 872.4730...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4730 Dental injecting needle. (a) Identification. A dental injecting needle is a slender, hollow metal device with a sharp point intended to be attached to a...

21 CFR 872.4730 - Dental injecting needle.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Dental injecting needle. 872.4730 Section 872.4730...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4730 Dental injecting needle. (a) Identification. A dental injecting needle is a slender, hollow metal device with a sharp point intended to be attached to a...

21 CFR 872.4730 - Dental injecting needle.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Dental injecting needle. 872.4730 Section 872.4730...) MEDICAL DEVICES DENTAL DEVICES Surgical Devices § 872.4730 Dental injecting needle. (a) Identification. A dental injecting needle is a slender, hollow metal device with a sharp point intended to be attached to a...

Current-induced switching in a magnetic insulator

NASA Astrophysics Data System (ADS)

Avci, Can Onur; Quindeau, Andy; Pai, Chi-Feng; Mann, Maxwell; Caretta, Lucas; Tang, Astera S.; Onbasli, Mehmet C.; Ross, Caroline A.; Beach, Geoffrey S. D.

2017-03-01

The spin Hall effect in heavy metals converts charge current into pure spin current, which can be injected into an adjacent ferromagnet to exert a torque. This spin-orbit torque (SOT) has been widely used to manipulate the magnetization in metallic ferromagnets. In the case of magnetic insulators (MIs), although charge currents cannot flow, spin currents can propagate, but current-induced control of the magnetization in a MI has so far remained elusive. Here we demonstrate spin-current-induced switching of a perpendicularly magnetized thulium iron garnet film driven by charge current in a Pt overlayer. We estimate a relatively large spin-mixing conductance and damping-like SOT through spin Hall magnetoresistance and harmonic Hall measurements, respectively, indicating considerable spin transparency at the Pt/MI interface. We show that spin currents injected across this interface lead to deterministic magnetization reversal at low current densities, paving the road towards ultralow-dissipation spintronic devices based on MIs.

Diffusion-Driven Charge Transport in Light Emitting Devices

PubMed Central

Oksanen, Jani; Suihkonen, Sami

2017-01-01

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. PMID:29231900

Currents Induced by Injected Charge in Junction Detectors

PubMed Central

Gaubas, Eugenijus; Ceponis, Tomas; Kalesinskas, Vidas

2013-01-01

The problem of drifting charge-induced currents is considered in order to predict the pulsed operational characteristics in photo- and particle-detectors with a junction controlled active area. The direct analysis of the field changes induced by drifting charge in the abrupt junction devices with a plane-parallel geometry of finite area electrodes is presented. The problem is solved using the one-dimensional approach. The models of the formation of the induced pulsed currents have been analyzed for the regimes of partial and full depletion. The obtained solutions for the current density contain expressions of a velocity field dependence on the applied voltage, location of the injected surface charge domain and carrier capture parameters. The drift component of this current coincides with Ramo's expression. It has been illustrated, that the synchronous action of carrier drift, trapping, generation and diffusion can lead to a vast variety of possible current pulse waveforms. Experimental illustrations of the current pulse variations determined by either the rather small or large carrier density within the photo-injected charge domain are presented, based on a study of Si detectors. PMID:24036586

[Influence of MnO3 on Photoelectric Performance in Organic Light Emitting Diodes].

PubMed

Guan, Yun-xia; Chen, Li-jia; Chen, Ping; Fu, Xiao-qiang; Niu, Lian-bin

2016-03-01

Organic Light Emitting Diodes (OLEDs) has been a promising new research point that has received much attention recently. Emission in a conventional OLED originates from the recombination of carriers (electrons and holes) that are injected from external electrodes. In the device, Electrons, on the other hand, are injected from the Al cathode to an electron-transporting layer and travel to the same emissive zone. Holes are injected from the transparent ITO anode to a hole-transporting layer and holes reach an emitting zone through the holetransporting layer. Electrons and holes recombine at the emissive film to formsinglet excited states, followed by emissive light. It is because OLED is basically an optical device and its structure consists of organic or inorganic layers of sub-wavelength thickness with different refractive indices. When the electron and holes are injected through the electrodes, they combine in the emission zone emitting the photons. These photons will have the reflection and transmission at each interface and the interference will determine the intensity profile. The emissive light reflected at the interfaces or the metallic electrode returns to the emissive layer and affects the radiation current efficiency. Microcavity OLED can produce saturated colors and narrow the emission spetrum as a new kind of technique. In the paper, we fabricate microcavity OLED using glass substrate. Ag film acts as the anode reflector mirror; NPB serves as the hole-transporting material; Alq3 is electron-transporting material and organic emissive material; Ag film acts as cathode reflector mirror. The microcavity OLED structures named as A, B, C and D are glass/Ag(15 nm)/MoO3 (x nm)/NPB(50 nm)/Alq3 (60 nm)/A1(100 nm). Here, A, x = 4 nm; B, x = 7 nm; C, x = 10 nm; D, x = 13 nm. The characteristic voltage, brightness and current of these devices are investigated in the electric field. The luminance from the Devices A, B, C and D reaches the luminance of 928, 1 369, 2 550 and 2 035 cd x m(-2), respectively at 13 V. At 60 mA x cm(-2), the current efficiency of the microcavity OLEDs using MnO3 are about 2.2, 2.6, 3.1 and 2.6 cd x A(-2) respectively. It is found that electrons are majority carriers and holes are minority carriers in this microcavity OLEDs. MnO3 film can improve hole injection ability from 4 to 10 nm. In addition, hole injection ability is increased with the increasing thickness of the MnO3 film.

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices

DTIC Science & Technology

1981-06-01

believed to be due to irregularities in the field at the cathode) from occurring. These DEIS EAROMs operate at lower power due to the small injected SiO...memory devices which can store information without an external power supply for long periods of time are currently an area of much interest [1-5]. Current...oppose each other. These require- ments are to get charge into and out of a charge storage layer at low voltages and powers in times on the order of

A device for controlled jet injection of large volumes of liquid.

PubMed

Mckeage, James W; Ruddy, Bryan P; Nielsen, Poul M F; Taberner, Andrew J

2016-08-01

We present a needle-free jet injection device controllably actuated by a voice coil and capable of injecting up to 1.3 mL. This device is used to perform jet injections of ~900 μL into porcine tissue. This is the first time that delivery of such a large volume has been reported using an electronically controllable device. The controllability of this device is demonstrated with a series of ejections where the desired volume is ejected to within 1 % during an injection at a predetermined jet velocity.

Mesoscopic kinetic Monte Carlo modeling of organic photovoltaic device characteristics

NASA Astrophysics Data System (ADS)

Kimber, Robin G. E.; Wright, Edward N.; O'Kane, Simon E. J.; Walker, Alison B.; Blakesley, James C.

2012-12-01

Measured mobility and current-voltage characteristics of single layer and photovoltaic (PV) devices composed of poly{9,9-dioctylfluorene-co-bis[N,N'-(4-butylphenyl)]bis(N,N'-phenyl-1,4-phenylene)diamine} (PFB) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) have been reproduced by a mesoscopic model employing the kinetic Monte Carlo (KMC) approach. Our aim is to show how to avoid the uncertainties common in electrical transport models arising from the need to fit a large number of parameters when little information is available, for example, a single current-voltage curve. Here, simulation parameters are derived from a series of measurements using a self-consistent “building-blocks” approach, starting from data on the simplest systems. We found that site energies show disorder and that correlations in the site energies and a distribution of deep traps must be included in order to reproduce measured charge mobility-field curves at low charge densities in bulk PFB and F8BT. The parameter set from the mobility-field curves reproduces the unipolar current in single layers of PFB and F8BT and allows us to deduce charge injection barriers. Finally, by combining these disorder descriptions and injection barriers with an optical model, the external quantum efficiency and current densities of blend and bilayer organic PV devices can be successfully reproduced across a voltage range encompassing reverse and forward bias, with the recombination rate the only parameter to be fitted, found to be 1×107 s-1. These findings demonstrate an approach that removes some of the arbitrariness present in transport models of organic devices, which validates the KMC as an accurate description of organic optoelectronic systems, and provides information on the microscopic origins of the device behavior.

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

Electrochemical immunoassay on a microfluidic device with sequential injection and flushing functions.

PubMed

Nashida, Norihiro; Satoh, Wataru; Fukuda, Junji; Suzuki, Hiroaki

2007-06-15

An integrated microfluidic device with injecting, flushing, and sensing functions was realized using valves that operate based on direct electrowetting. The device consisted of two substrates: a glass substrate with driving and sensing electrodes and a poly(dimethylsiloxane) (PDMS) substrate. Microfluidic transport was achieved using the spontaneous movement of solutions in hydrophilic flow channels formed with a dry-film photoresist layer. The injection and flushing of solutions were controlled by gold working electrodes, which functioned as valves. The valves were formed either in the channels or in a through-hole in the glass substrate. To demonstrate the system's applicability to an immunoassay, the detection of immobilized antigens was performed as a partial simulation of a sandwich immunoassay. Human alpha-fetoprotein (AFP) or an anti-human AFP antibody was immobilized on a platinum working electrode in the chamber using a plasma-polymerized film (PPF). By applying a potential to the injection valves, necessary solutions were injected one by one through the channels into a reaction chamber at the center of the chip and incubated for reasonable periods of time. The solutions were then flushed through the flushing valve and absorbed in a filter paper placed under the device. After incubation with the corresponding antibodies labeled with glucose oxidase (GOD), electrochemical detection was conducted. In both cases, the obtained current depended on the amount of immobilized antigen. The calibration curves were sigmoidal, and the detection limit was 0.1 ng. The developed microfluidic system could potentially be a fundamental component for a micro immunoassay of the next generation.

The Efficacy, Longevity, and Safety of Combined Radiofrequency Treatment and Hyaluronic Acid Filler for Skin Rejuvenation

PubMed Central

Kim, Hyuk; Park, Kui Young; Choi, Sun Young; Koh, Hyun-Ju; Park, Sun-Young; Park, Won-Seok; Bae, Il-Hong

2014-01-01

Background Recent advances in hyaluronic acid (HA) fillers and radiofrequency (RF) devices have been made in the context of skin rejuvenation and cosmetic surgery. Moreover, combination regimens with both techniques are currently being developed. Objective The present study was designed to examine the clinical and histologic effects of a new needle that incorporates an RF device for HA injections. Methods A new intradermal needle RF device (INNOfill; Pacific Pharma, Korea) was assessed in the present study. In the animal arm, procollagen production was measured by using enzyme-linked immunosorbent assay, the filler volume was quantified by incorporating a dye with filler, and the filler distribution was assessed through the changes in tissue structure. In the human arm, the efficacy of the combination regimen was assessed by using the wrinkle severity rating scale (WSRS). Results In the animal study, RF treatment increased procollagen production in a time-dependent fashion. The total volume was significantly increased with the RF treatment when compared with the filler injections alone, and lasted for up to 7 weeks after treatment. Additionally, the filler distribution was reduced in animals treated with RF when compared with the untreated group. In the human study, the nasolabial folds of subjects treated with RF before filler injections exhibited a significantly greater change in the WSRS score from baseline when compared with the nasolabial folds treated with filler injections alone. Conclusion A new device incorporating RF treatment before HA filler injection may represent a biocompatible and long-lasting advance in skin rejuvenation. PMID:25143672

Room temperature current injection polariton light emitting diode with a hybrid microcavity.

PubMed

Lu, Tien-Chang; Chen, Jun-Rong; Lin, Shiang-Chi; Huang, Si-Wei; Wang, Shing-Chung; Yamamoto, Yoshihisa

2011-07-13

The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electrodynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

PubMed Central

Ohno, Takeo; Oyama, Yutaka

2012-01-01

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor. PMID:27877466

Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

NASA Astrophysics Data System (ADS)

May, Brelon J.; Selcu, Camelia M.; Sarwar, A. T. M. G.; Myers, Roberto C.

2018-02-01

As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs are the focus of recent development efforts in solid state lighting as they offer distinct photonic advantages and enable direct integration on a variety of different substrates. However, for practical nanowire LEDs to be realized, uniform electrical injection must be achieved through large numbers of nanowire LEDs. Here, we investigate the effect of the integration of a III-Nitride polarization engineered tunnel junction (TJ) in nanowire LEDs on Si on both the overall injection efficiency and nanoscale current uniformity. By using conductive atomic force microscopy (cAFM) and current-voltage (IV) analysis, we explore the link between the nanoscale nonuniformities and the ensemble devices which consist of many diodes wired in parallel. Nanometer resolved current maps reveal that the integration of a TJ on n-Si increases the amount of current a single nanowire can pass at a given applied bias by up to an order of magnitude, with the top 10% of wires passing more than ×3.5 the current of nanowires without a TJ. This manifests at the macroscopic level as a reduction in threshold voltage by more than 3 V and an increase in differential conductance as a direct consequence of the integration of the TJ. These results show the utility of cAFM to quantitatively probe the electrical inhomogeneities in as-grown nanowire ensembles without introducing uncertainty due to additional device processing steps, opening the door to more rapid development of nanowire ensemble based photonics.

Simulators for training in ultrasound guided procedures.

PubMed

Farjad Sultan, Syed; Shorten, George; Iohom, Gabrielle

2013-06-01

The four major categories of skill sets associated with proficiency in ultrasound guided regional anaesthesia are 1) understanding device operations, 2) image optimization, 3) image interpretation and 4) visualization of needle insertion and injection of the local anesthetic solution. Of these, visualization of needle insertion and injection of local anaesthetic solution can be practiced using simulators and phantoms. This survey of existing simulators summarizes advantages and disadvantages of each. Current deficits pertain to the validation process.

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

NASA Astrophysics Data System (ADS)

Vaziri, S.; Belete, M.; Dentoni Litta, E.; Smith, A. D.; Lupina, G.; Lemme, M. C.; Östling, M.

2015-07-01

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transport. High injected tunneling current densities approaching 103 A cm-2 (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO2) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

A molecular spin-photovoltaic device.

PubMed

Sun, Xiangnan; Vélez, Saül; Atxabal, Ainhoa; Bedoya-Pinto, Amilcar; Parui, Subir; Zhu, Xiangwei; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E

2017-08-18

We fabricated a C 60 fullerene-based molecular spin-photovoltaic device that integrates a photovoltaic response with the spin transport across the molecular layer. The photovoltaic response can be modified under the application of a small magnetic field, with a magnetophotovoltage of up to 5% at room temperature. Device functionalities include a magnetic current inverter and the presence of diverging magnetocurrent at certain illumination levels that could be useful for sensing. Completely spin-polarized currents can be created by balancing the external partially spin-polarized injection with the photogenerated carriers. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Magnetic tunnel spin injectors for spintronics

NASA Astrophysics Data System (ADS)

Wang, Roger

Research in spin-based electronics, or "spintronics", has a universal goal to develop applications for electron spin in a broad range of electronics and strives to produce low power nanoscale devices. Spin injection into semiconductors is an important initial step in the development of spintronic devices, with the goal to create a highly spin polarized population of electrons inside a semiconductor at room temperature for study, characterization, and manipulation. This dissertation investigates magnetic tunnel spin injectors that aim to meet the spin injection requirements needed for potential spintronic devices. Magnetism and spin are inherently related, and chapter 1 provides an introduction on magnetic tunneling and spintronics. Chapter 2 then describes the fabrication of the spin injector structures studied in this dissertation, and also illustrates the optical spin detection technique that correlates the measured electroluminescence polarization from quantum wells to the electron spin polarization inside the semiconductor. Chapter 3 reports the spin injection from the magnetic tunnel transistor (MTT) spin injector, which is capable of producing highly spin polarized tunneling currents by spin selective scattering in its multilayer structure. The MTT achieves ˜10% lower bound injected spin polarization in GaAs at 1.4 K. Chapter 4 reports the spin injection from CoFe-MgO(100) tunnel spin injectors, where spin dependent tunneling through MgO(100) produces highly spin polarized tunneling currents. These structures achieve lower bound spin polarizations exceeding 50% at 100 K and 30% in GaAs at 290 K. The CoFe-MgO spin injectors also demonstrate excellent thermal stability, maintaining high injection efficiencies even after exposure to temperatures of up to 400 C. Bias voltage and temperature dependent studies on these structures indicate a significant dependence of the electroluminescence polarization on the spin and carrier recombination lifetimes inside the semiconductor. Chapter 5 investigates these spin and carrier lifetime effects on the electroluminescence polarization using time resolved optical techniques. These studies suggest that a peak in the carrier lifetime with temperature is responsible for the nonmonotonic temperature dependence observed in the electroluminescence polarization, and that the initially injected spin polarization from CoFe-MgO spin injectors is a nearly temperature independent ˜70% from 10 K up to room temperature.

Extraction-controlled terahertz frequency quantum cascade lasers with a diagonal LO-phonon extraction and injection stage.

PubMed

Han, Y J; Li, L H; Grier, A; Chen, L; Valavanis, A; Zhu, J; Freeman, J R; Isac, N; Colombelli, R; Dean, P; Davies, A G; Linfield, E H

2016-12-12

We report an extraction-controlled terahertz (THz)-frequency quantum cascade laser design in which a diagonal LO-phonon scattering process is used to achieve efficient current injection into the upper laser level of each period and simultaneously extract electrons from the adjacent period. The effects of the diagonality of the radiative transition are investigated, and a design with a scaled oscillator strength of 0.45 is shown experimentally to provide the highest temperature performance. A 3.3 THz device processed into a double-metal waveguide configuration operated up to 123 K in pulsed mode, with a threshold current density of 1.3 kA/cm² at 10 K. The QCL structures are modeled using an extended density matrix approach, and the large threshold current is attributed to parasitic current paths associated with the upper laser levels. The simplicity of this design makes it an ideal platform to investigate the scattering injection process.

Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Fei-ping, E-mail: lufp-sysu@163.com; Liu, Xiao-bin; Xing, Yong-zhong

2014-04-28

Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (ϕ{sub n}) is equal tomore » the hole injection barrier (ϕ{sub p}) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ϕ{sub n} > ϕ{sub p} under the condition of electron mobility (μ{sub 0n}) > hole mobility (μ{sub 0p}), whereas the result for the case of μ{sub 0n} < μ{sub 0p}, is opposite. The largest CBF when μ{sub 0n} = μ{sub 0p} can be achieved in the case of ϕ{sub n} = ϕ{sub p} in the entire region of the applied voltage. In addition, the CBF value of the device increases with increasing applied voltage. The results obtained in this paper can present an in-depth understanding of the OLED working mechanism and help in the future fabrication of high efficiency OLEDs.« less

Luminance enhancement in quantum dot light-emitting diodes fabricated with Field’s metal as the cathode

NASA Astrophysics Data System (ADS)

Basilio, Carlos; Oliva, Jorge; Lopez-Luke, Tzarara; Pu, Ying-Chih; Zhang, Jin Z.; Rodriguez, C. E.; de la Rosa, E.

2017-03-01

This work reports the fabrication and characterization of blue-green quantum dot light-emitting diodes (QD-LEDs) by using core/shell/shell Cd1-x Zn x Se/ZnSe/ZnS quantum dots. Poly [(9,9-bis(3‧-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN) was introduced in order to enhance the electron injection and also acted as a protecting layer during the deposition of the cathode (a Field’s metal sheet) on the organic/inorganic active layers at low temperature (63 °C). This procedure permitted us to eliminate the process of thermal evaporation for the deposition of metallic cathodes, which is typically used in the fabrication of OLEDs. The performance of devices made with an aluminum cathode was compared with that of devices which employed Field’s metal (FM) as the cathode. We found that the luminance and efficiency of devices with FM was ~70% higher with respect to those that employed aluminum as the cathode and their consumption of current was similar up to 13 V. We also demonstrated that the simultaneous presence of 1,2-ethanedethiol (EDT) and PFN enhanced the luminance in our devices and improved the current injection in QD-LEDs. Hence, the architecture for QD-LEDs presented in this work could be useful for the fabrication of low-cost luminescent devices.

A redesigned follitropin alfa pen injector for infertility: results of a market research study

PubMed Central

Abbotts, Carole; Salgado-Braga, Cristiana; Audibert-Gros, Céline

2011-01-01

Background: The purpose of this study was to evaluate patient-learning and nurse-teaching experiences when using a redesigned prefilled, ready-to-use follitropin alfa pen injector. Methods: Seventy-three UK women of reproductive age either administering daily treatment with self-injectable gonadotropins or about to start gonadotropin treatment for infertility (aged 24–47 years; 53 self-injection-experienced and 20 self-injection-naïve) and 28 nurses from UK infertility clinics were recruited for the study. Following instruction, patients and nurses used the redesigned follitropin alfa pen to inject water into an orange and completed questionnaires to evaluate their experiences with the pen immediately after the simulated injections. Results: Most (88%, n = 64) patients found it easy to learn how to use the pen. Among injection-experienced patients, 66% (n = 35) agreed that the redesigned pen was easier to learn to use compared with their current method and 70% (n = 37) also said they would prefer its use over current devices for all injectable fertility medications. All nurses considered the redesigned pen easy to learn and believed it would be easy to teach patients how to use. Eighty-six percent (n = 24) of the nurses thought it was easy to teach patients to determine the remaining dose to be dialed and injected in a second pen if the initial dose was incomplete. Compared with other injection devices, 96% (n = 27) thought it was “much easier” to “as easy” to teach patients to use the redesigned pen. Based on ease of teaching, 68% (n = 19) of nurses would choose to teach the pen in preference to any other injection method. Almost all (93%, n = 26) nurses considered that having the same pen format for a range of injectable gonadotropins would facilitate teaching and learning self-injection. Conclusion: In this market research study with infertile patients and infertility nurses, the redesigned follitropin alfa pen was perceived as easy to learn, easy to teach how to use, and well accepted. PMID:21792303

Improved efficiency in blue phosphorescent organic light-emitting diodes by the stepwise doping structure

NASA Astrophysics Data System (ADS)

Yang, Liping; Wang, Xiaoping; Kou, Zhiqi; Ji, Changyan

2017-04-01

The electro-optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the stepwise doping structure in the emitting layer (EML). A series of multi-EML devices with different doping concentration of blue dopant (FIrpic) are fabricated. The effect of the stepwise doping structure close to the electron transport layer is more obvious than that close to the hole transport layer. When the doping concentration increases gradually from the hole injection side to the electron injection side, the maximum values of the luminance, current and power efficiency can reach to 9745 cd/m2 (at 9 V), 32.0 cd/A and 25.1 lm/W in the device with the asymmetric tri-EML structure, which is improved by about 10% compared with that in the bi-EML device. When the number of the EML is four, the performance of the device becomes worse because of the interface effect resulting from different concentration of dopant.

Magnetic nano-oscillator driven by pure spin current.

PubMed

Demidov, Vladislav E; Urazhdin, Sergei; Ulrichs, Henning; Tiberkevich, Vasyl; Slavin, Andrei; Baither, Dietmar; Schmitz, Guido; Demokritov, Sergej O

2012-12-01

With the advent of pure-spin-current sources, spin-based electronic (spintronic) devices no longer require electrical charge transfer, opening new possibilities for both conducting and insulating spintronic systems. Pure spin currents have been used to suppress noise caused by thermal fluctuations in magnetic nanodevices, amplify propagating magnetization waves, and to reduce the dynamic damping in magnetic films. However, generation of coherent auto-oscillations by pure spin currents has not been achieved so far. Here we demonstrate the generation of single-mode coherent auto-oscillations in a device that combines local injection of a pure spin current with enhanced spin-wave radiation losses. Counterintuitively, radiation losses enable excitation of auto-oscillation, suppressing the nonlinear processes that prevent auto-oscillation by redistributing the energy between different modes. Our devices exhibit auto-oscillations at moderate current densities, at a microwave frequency tunable over a wide range. These findings suggest a new route for the implementation of nanoscale microwave sources for next-generation integrated electronics.

High-speed electronic beam steering using injection locking of a laser-diode array

NASA Astrophysics Data System (ADS)

Swanson, E. A.; Abbas, G. L.; Yang, S.; Chan, V. W. S.; Fujimoto, J. G.

1987-01-01

High-speed electronic steering of the output beam of a 10-stripe laser-diode array is reported. The array was injection locked to a single-frequency laser diode. High-speed steering of the locked 0.5-deg-wide far-field lobe is demonstrated either by modulating the injection current of the array or by modulating the frequency of the master laser. Closed-loop tracking bandwidths of 70 kHz and 3 MHz, respectively, were obtained. The beam-steering bandwidths are limited by the FM responses of the modulated devices for both techniques.

Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow

NASA Astrophysics Data System (ADS)

Thornton, Robert L.; Mosby, William J.; Chung, Harlan F.

1989-10-01

The authors present fabrication techniques and device performance for a novel transistor structure, the lateral heterojunction bipolar transistor. The lateral heterojunctions are formed by impurity-induced disordering of a GaAs base layer sandwiched between two AlGaAs layers. These transistor structures exhibit current gains of 14 for base widths of 0.74 micron. Transistor action in this device occurs parallel to the surface of the device structure. The active base region of the structure is completely submerged, resulting in a reduction of surface recombination as a mechanism for gain reduction in the device. Impurity-induced disordering is used to widen the bandgap of the alloy in the emitter and collector, resulting in an improvement of the emitter injection efficiency. Since the device is based entirely on a surface diffusion process, the device is completely planar and has no steps involving etching of the III-V alloy material. These advantages lead this device to be considered as a candidate for optoelectronic integration applications. The transistor device functions as a buried heterostructure laser, with a threshold current as low as 6 mA for a 1.4-micron stripe.

Current voltage perspective of an organic electronic device

NASA Astrophysics Data System (ADS)

Mukherjee, Ayash K.; Kumari, Nikita

2018-05-01

Nonlinearity in current (I) - voltage (V) measurement is a well-known attribute of two-terminal organic device, irrespective of the geometrical or structural arrangement of the device. Most of the existing theories that are developed for interpretation of I-V data, either focus current-voltage relationship of charge injection mechanism across the electrode-organic material interface or charge transport mechanism through the organic active material. On the contrary, both the mechanisms work in tandem charge conduction through the device. The transport mechanism is further complicated by incoherent scattering from scattering centres/charge traps that are located at the electrode-organic material interface and in the bulk of organic material. In the present communication, a collective expression has been formulated that comprises of all the transport mechanisms that are occurring at various locations of a planar organic device. The model has been fitted to experimental I-V data of Au/P3HT/Au device with excellent degree of agreement. Certain physical parameters such as the effective area of cross-section and resistance due to charge traps have been extracted from the fit.

Memory and Spin Injection Devices Involving Half Metals

DOE PAGES

Shaughnessy, M.; Snow, Ryan; Damewood, L.; ...

2011-01-01

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injectionmore » devices.« less

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

Boolean and brain-inspired computing using spin-transfer torque devices

NASA Astrophysics Data System (ADS)

Fan, Deliang

Several completely new approaches (such as spintronic, carbon nanotube, graphene, TFETs, etc.) to information processing and data storage technologies are emerging to address the time frame beyond current Complementary Metal-Oxide-Semiconductor (CMOS) roadmap. The high speed magnetization switching of a nano-magnet due to current induced spin-transfer torque (STT) have been demonstrated in recent experiments. Such STT devices can be explored in compact, low power memory and logic design. In order to truly leverage STT devices based computing, researchers require a re-think of circuit, architecture, and computing model, since the STT devices are unlikely to be drop-in replacements for CMOS. The potential of STT devices based computing will be best realized by considering new computing models that are inherently suited to the characteristics of STT devices, and new applications that are enabled by their unique capabilities, thereby attaining performance that CMOS cannot achieve. The goal of this research is to conduct synergistic exploration in architecture, circuit and device levels for Boolean and brain-inspired computing using nanoscale STT devices. Specifically, we first show that the non-volatile STT devices can be used in designing configurable Boolean logic blocks. We propose a spin-memristor threshold logic (SMTL) gate design, where memristive cross-bar array is used to perform current mode summation of binary inputs and the low power current mode spintronic threshold device carries out the energy efficient threshold operation. Next, for brain-inspired computing, we have exploited different spin-transfer torque device structures that can implement the hard-limiting and soft-limiting artificial neuron transfer functions respectively. We apply such STT based neuron (or 'spin-neuron') in various neural network architectures, such as hierarchical temporal memory and feed-forward neural network, for performing "human-like" cognitive computing, which show more than two orders of lower energy consumption compared to state of the art CMOS implementation. Finally, we show the dynamics of injection locked Spin Hall Effect Spin-Torque Oscillator (SHE-STO) cluster can be exploited as a robust multi-dimensional distance metric for associative computing, image/ video analysis, etc. Our simulation results show that the proposed system architecture with injection locked SHE-STOs and the associated CMOS interface circuits can be suitable for robust and energy efficient associative computing and pattern matching.

Emission characteristics in solution-processed asymmetric white alternating current field-induced polymer electroluminescent devices

NASA Astrophysics Data System (ADS)

Chen, Yonghua; Xia, Yingdong; Smith, Gregory M.; Gu, Yu; Yang, Chuluo; Carroll, David L.

2013-01-01

In this work, the emission characteristics of a blue fluorophor poly(9, 9-dioctylfluorene) (PFO) combined with a red emitting dye: Bis(2-methyl-dibenzo[f,h]quinoxaline)(acetylacetonate)iridium (III) [Ir(MDQ)2(acac)], are examined in two different asymmetric white alternating current field-induced polymer electroluminescent (FIPEL) device structures. The first is a top-contact device in which the triplet transfer is observed resulting in the concentration-dependence of the emission similar to the standard organic light-emitting diode (OLED) structure. The second is a bottom-contact device which, however, exhibits concentration-independence of emission. Specifically, both dye emission and polymer emission are found for the concentrations as high as 10% by weight of the dye in the emitter. We attribute this to the significant different carrier injection characteristics of the two FIPEL devices. Our results suggest a simple and easy way to realize high-quality white emission.

Practical considerations in clinical strategy to support the development of injectable drug-device combination products for biologics.

PubMed

Li, Zhaoyang; Easton, Rachael

2018-01-01

The development of an injectable drug-device combination (DDC) product for biologics is an intricate and evolving process that requires substantial investments of time and money. Consequently, the commercial dosage form(s) or presentation(s) are often not ready when pivotal trials commence, and it is common to have drug product changes (manufacturing process or presentation) during clinical development. A scientifically sound and robust bridging strategy is required in order to introduce these changes into the clinic safely. There is currently no single developmental paradigm, but a risk-based hierarchical approach has been well accepted. The rigor required of a bridging package depends on the level of risk associated with the changes. Clinical pharmacokinetic/pharmacodynamic comparability or outcome studies are only required when important changes occur at a late stage. Moreover, an injectable DDC needs to be user-centric, and usability assessment in real-world clinical settings may be required to support the approval of a DDC. In this review, we discuss the common issues during the manufacturing process and presentation development of an injectable DDC and practical considerations in establishing a clinical strategy to address these issues, including key elements of clinical studies. We also analyze the current practice in the industry and review relevant and status of regulatory guidance in the DDC field.

Practical considerations in clinical strategy to support the development of injectable drug-device combination products for biologics

PubMed Central

Easton, Rachael

2018-01-01

ABSTRACT The development of an injectable drug-device combination (DDC) product for biologics is an intricate and evolving process that requires substantial investments of time and money. Consequently, the commercial dosage form(s) or presentation(s) are often not ready when pivotal trials commence, and it is common to have drug product changes (manufacturing process or presentation) during clinical development. A scientifically sound and robust bridging strategy is required in order to introduce these changes into the clinic safely. There is currently no single developmental paradigm, but a risk-based hierarchical approach has been well accepted. The rigor required of a bridging package depends on the level of risk associated with the changes. Clinical pharmacokinetic/pharmacodynamic comparability or outcome studies are only required when important changes occur at a late stage. Moreover, an injectable DDC needs to be user-centric, and usability assessment in real-world clinical settings may be required to support the approval of a DDC. In this review, we discuss the common issues during the manufacturing process and presentation development of an injectable DDC and practical considerations in establishing a clinical strategy to address these issues, including key elements of clinical studies. We also analyze the current practice in the industry and review relevant and status of regulatory guidance in the DDC field. PMID:29035675

High-injection effects in near-field thermophotovoltaic devices.

PubMed

Blandre, Etienne; Chapuis, Pierre-Olivier; Vaillon, Rodolphe

2017-11-20

In near-field thermophotovoltaics, a substantial enhancement of the electrical power output is expected as a result of the larger photogeneration of electron-hole pairs due to the tunneling of evanescent modes from the thermal radiator to the photovoltaic cell. The common low-injection approximation, which considers that the local carrier density due to photogeneration is moderate in comparison to that due to doping, needs therefore to be assessed. By solving the full drift-diffusion equations, the existence of high-injection effects is studied in the case of a GaSb p-on-n junction cell and a radiator supporting surface polaritons. Depending on doping densities and surface recombination velocity, results reveal that high-injection phenomena can already take place in the far field and become very significant in the near field. Impacts of high injection on maximum electrical power, short-circuit current, open-circuit voltage, recombination rates, and variations of the difference between quasi-Fermi levels are analyzed in detail. By showing that an optimum acceptor doping density can be estimated, this work suggests that a detailed and accurate modeling of the electrical transport is also key for the design of near-field thermophotovoltaic devices.

Superconducting current injection transistor with very high critical-current-density edge-junctions

NASA Astrophysics Data System (ADS)

van Zeghbroeck, B. J.

1985-03-01

A Superconducting Current Injection Transistor (Super-CIT) was fabricated with very high critical current-density edge-junctions. The junctions have a niobium base electrode and a lead-alloy counter electrode. The length of the junctions is 30 microns and the critical-current density is 190KA/sq cm. The Super-CIT has a current gain of 2, a large signal transresistance of 100 mV/A, and the turn-on delay, inferred from the junction resonance, is 7ps. The power dissipation is 3.5 microwatts and the power-delay product is 24.5aJ. Gap reduction due to heating was observed, limiting the maximum power dissipation per unit length to 1.1 microwatt/micron. Compared to lead-alloy Super-CITs, the device is five times smaller, three times faster, and has a three times larger output voltage. The damping resistor and the contact junction could also be eliminated.

Research progress of infrared detecting and display integrated device based on infrared-visible up-conversion technology

NASA Astrophysics Data System (ADS)

Xu, Junfeng; Li, Weile; He, Bo; Wang, Haowei; Song, Yong; Yang, Shengyi; Ni, Guoqiang

2018-01-01

Infrared detecting and display device (IR-DDD) is a newly developed optical up-conversion device that integrates the light-emitting diode (LED) onto the infrared (IR) photo-detector, in order to convert IR light into the carriers photo-generated in detection materials and inject them into LED to emit visible light. This IR-DDD can achieve the direct up-conversion from IR ray to visible light, showing the considerable potential in night-vision application. This paper attempts a review of its working principle and current research progresses.

Negative differential resistance in GaN tunneling hot electron transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

NASA Astrophysics Data System (ADS)

Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.

2017-07-01

This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.

Human and bovine spinal disc mechanics subsequent to trypsin injection.

PubMed

Alsup, Jeremy; Bishop, Timothy; Eggett, Dennis; Bowden, Anton E

2017-10-01

To investigate the biomechanical effects of injections of a protease on the characteristics of bovine coccygeal and human lumbar disc motion segments. Mechanics of treated tissues were measured immediately after injection and 3 h after injection. Motion segments underwent axial rotation and flexion-extension loading. Stiffness and neutral zone parameters experienced significant changes over time, with bovine tissues more strongly affected than human cadaver tissues. This was true in both axial rotation and flexion-extension. The treatment type significantly affected the neutral zone measurements in axial rotation. Hysteresis parameters were impacted by control injections. The extrapolation of bovine coccygeal motion testing results to human lumbar disc mechanics is not yet practical. The injected treatment may have a smaller impact on disc mechanics than time in testing. Viscoelasticity of human lumbar discs may be impacted by any damage to the annulus fibrosis induced by needlestick. Preclinical testing of novel spinal devices is essential to the design validation and regulatory processes, but current testing techniques rely on cadaveric testing of primarily older spines with essentially random amounts of disc degeneration. The present work investigates the viability of using trypsin injections to create a more uniform preclinical model of disc degeneration from a mechanics perspective, for the purpose of testing spinal devices. Such a model would facilitate translation of new spinal technologies to clinical practice.

Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices

NASA Astrophysics Data System (ADS)

Suja, Mohammad; Debnath, Bishwajit; Bashar, Sunayna B.; Su, Longxing; Lake, Roger; Liu, Jianlin

2018-05-01

Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum efficiency up to 6 times is demonstrated. Threshold current for lasing is decreased by as much as 30% while the output power is increased up to 350% at an injection current of 40 mA. A numerical simulation study reveals that hole carriers are generated in the ZnO MSM devices from impact ionization processes for subsequent plasmon-exciton coupled lasing.

Fabrication of DC inorganic electroluminescent thin-film devices with novel n-p-n type structure

NASA Astrophysics Data System (ADS)

Ishimura, Takuyoshi; Matsumoto, Hironaga

2014-04-01

Inorganic electroluminescent (iEL) thin films are used in light-emitting devices and are functional under alternating current conditions only. Stable luminescent light has yet to be obtained under direct current conditions. We postulated that thin-film iEL light emission occurs when an injected electron occupies the excited state of a luminescent center and then recombines radiatively. From this perspective, we fabricated a novel stacked n-p-n type thin-film iEL device composed of indium tin oxide (ITO)-ZnO-CuAlO2-ZnS-ZnS:TbF3-Al thin films and obtained stable luminescence using a low-voltage DC power supply. The overall luminescent color of the device depended on only the dopant in the luminescent layer, not the band gap or thin-film material.

Modeling recombination processes and predicting energy conversion efficiency of dye sensitized solar cells from first principles

NASA Astrophysics Data System (ADS)

Ma, Wei; Meng, Sheng

2014-03-01

We present a set of algorithms based on solo first principles calculations, to accurately calculate key properties of a DSC device including sunlight harvest, electron injection, electron-hole recombination, and open circuit voltages. Two series of D- π-A dyes are adopted as sample dyes. The short circuit current can be predicted by calculating the dyes' photo absorption, and the electron injection and recombination lifetime using real-time time-dependent density functional theory (TDDFT) simulations. Open circuit voltage can be reproduced by calculating energy difference between the quasi-Fermi level of electrons in the semiconductor and the electrolyte redox potential, considering the influence of electron recombination. Based on timescales obtained from real time TDDFT dynamics for excited states, the estimated power conversion efficiency of DSC fits nicely with the experiment, with deviation below 1-2%. Light harvesting efficiency, incident photon-to-electron conversion efficiency and the current-voltage characteristics can also be well reproduced. The predicted efficiency can serve as either an ideal limit for optimizing photovoltaic performance of a given dye, or a virtual device that closely mimicking the performance of a real device under different experimental settings.

Usability evaluation of intradermal adapters (IDA).

PubMed

Tsals, Izrail

2017-03-27

Intradermal adapter device technology minimizes the complexity of the Mantoux technique, thereby providing predictable, reproducible intradermal (ID) injections and removing the concerns regarding the ease and reliability of Mantoux technique when using conventional needle and syringe. The technology employs a simple device with geometry designed to gently deform the skin surface and the subcutaneous tissue, providing the ideal angle and depth of needle insertion for consistently successful intradermal injections. The results of this development were presented at the First, Second and Third Skin Vaccination Summits in 2011, 2013 and 2015 respectively [1,2,3]. The current publication addresses the performance of intradermal adapters (IDA) evaluated in three preclinical studies. The evaluations were based on the assessment of bleb formation in a skin model, an accepted indicator of ID injection success. All evaluated devices share the same proprietary dermal interface technology. Devices instituting this design are easy to use, require minimal training, and employ conventionally molded parts and cannula. These studies evaluated IDAs of initial design integral with luer lock needles, IDAs for use with conventional syringes, and intradermal adapters for use with auto disable syringes (ADID adapters). The evaluated ID adapters were intended to consistently place the lancet of the needle at a depth of 0.75mm from the skin's surface. This placement depth addresses the variation in the skin thickness at immunization sites for the majority of patients independent of many other variables. Most participants preferred the intradermal adapter method over the traditional Mantoux and identified a need for the adapter at their workplace. Evaluation of IDAs by registered nurses indicated these devices increase success of bleb formation. The use of IDA increased the success of forming blebs by about 30%. Nurses felt the injections were much easier to perform, in particular by novices. Copyright © 2016 Elsevier Ltd. All rights reserved.

Generalized reciprocity theorem for semiconductor devices

NASA Technical Reports Server (NTRS)

Misiakos, K.; Lindholm, F. A.

1985-01-01

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Gong, Z.; Liu, N. Y.; Tao, Y. B.; Massoubre, D.; Xie, E. Y.; Hu, X. D.; Chen, Z. Z.; Zhang, G. Y.; Pan, Y. B.; Hao, M. S.; Watson, I. M.; Gu, E.; Dawson, M. D.

2012-01-01

Micro-pixelated InGaN LED arrays operating at 560 and 600 nm, respectively, are demonstrated for what the authors believe to be the first time. Such devices offer applications in areas including bioinstrumentation, visible light communications and optoelectronic tweezers. The devices reported are based on new epitaxial structures, retaining conventional (0 0 0 1) orientation, but incorporating electron reservoir layers which enhance the efficiency of radiative combination in the active regions. A measured output optical power density up to 8 W cm-2 (4.4 W cm-2) has been achieved from a representative pixel of the yellow-green (amber) LED array, substantially higher than that from conventional broad-area reference LEDs fabricated from the same wafer material. Furthermore, these micro-LEDs can sustain a high current density, up to 4.5 kA cm-2, before thermal rollover. A significant blueshift of the emission wavelength with increasing injection current is observed, however. This blueshift saturates at 45 nm (50 nm) for the yellow-green (amber) LED array, and numerical simulations have been used to gain insight into the responsible mechanisms in this microstructured format of device. In the relatively low-current-density regime (<3.5 kA cm-2) the blueshift is attributable to both the screening of the piezoelectric field by the injected carriers and the band-filling effect, whereas in the high-current regime, it is mainly due to band-filling. Further development of the epitaxial wafer material is expected to improve the current-dependent spectral stability.

Epitaxy of spin injectors and their application toward spin-polarized lasers

NASA Astrophysics Data System (ADS)

Holub, Michael A.

Spintronics is an emerging; multidisciplinary field which examines the role of electron and nuclear spin in solid-state physics. Recent experiments suggest that the spin degree of freedom may be exploited to enhance the functionality of conventional semi conductor devices. Such endeavors require methods for efficient spin injection; spin transport, and spin detection in semiconductor heterostructures. This dissertation investigates the molecular-beam epitaxial growth and properties of ferromagnetic materials for electrical spin injection. Spin-injecting contacts are incorporated into prototype spintronic devices and their performance is examined. Two classes of materials may be used for spin injection into semiconductors: dilute magnetic semiconductor and ferromagnetic metals. The low-temperature growth and properties of (Al)Gal4nAs and In(Ga)MnAs epilayers and nanostructures are investigated, and a technique for the self-organized growth of Mn-doped InAs quantum dots is developed. The epitaxial growth of (Fe,MnAs)/(Al)GaAs Schottky tunnel barriers for electron spin injection is also investigated. The spin-injection efficiency of these contacts is assessed using a spin-valve or spin-polarized light-emitting diode. Lateral MnAs/GaAs spin-valves where Schottky tunnel barriers enable all-electrical spin injection and detection are grown, fabricated, and characterized. The Rowell criteria confirm that tunneling is the dominant, transport mechanism for the Schottky tunnel contacts. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K are observed for a 0.5 pin channel length spin-valve. Measurements using non-local spin-valves and other control devices verify that spurious contributions from anisotropic magnetoresistance and local Hall effects are negligible. Spin-polarized lasers offer inherent polarization control, reduced chirp, and lower threshold currents and are expected to outperform their charge-based counterparts. Initial efforts to realize a spin-VCSEL utilize (Ga,Mn)As spin aligners for hole spin injection. The polarization of the laser emission is dominated by dichroic absorption in the ferromagnetic (Ga,Mn)As spin-aligner layer, which greatly complicates the verification of spin injection. Significant spin-dependent effects are observed in a spin-VCSEL utilizing epitaxially regrown Fe/AlGaAs Schottky tunnel barriers. A maximum degree of circular polarization of 23% and corresponding threshold current reduction of 11% are measured for a 15 mum Fe spin-VCSEL at 50 K. A cavity spin polarization of 16.8% is estimated from rate equation analysis.

A charge carrier transport model for donor-acceptor blend layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fischer, Janine, E-mail: janine.fischer@iapp.de; Widmer, Johannes; Koerner, Christian

2015-01-28

Highly efficient organic solar cells typically comprise donor-acceptor blend layers facilitating effective splitting of excitons. However, the charge carrier mobility in the blends can be substantially smaller than in neat materials, hampering the device performance. Currently, available mobility models do not describe the transport in blend layers entirely. Here, we investigate hole transport in a model blend system consisting of the small molecule donor zinc phthalocyanine (ZnPc) and the acceptor fullerene C{sub 60} in different mixing ratios. The blend layer is sandwiched between p-doped organic injection layers, which prevent minority charge carrier injection and enable exploiting diffusion currents for themore » characterization of exponential tail states from a thickness variation of the blend layer using numerical drift-diffusion simulations. Trap-assisted recombination must be considered to correctly model the conductivity behavior of the devices, which are influenced by local electron currents in the active layer, even though the active layer is sandwiched in between p-doped contacts. We find that the density of deep tail states is largest in the devices with 1:1 mixing ratio (E{sub t} = 0.14 eV, N{sub t} = 1.2 × 10{sup 18 }cm{sup −3}) directing towards lattice disorder as the transport limiting process. A combined field and charge carrier density dependent mobility model are developed for this blend layer.« less

Optical speedup at transparency of the gain recovery in semiconductor optical amplifiers

NASA Astrophysics Data System (ADS)

Hessler, T. P.; Dupertuis, M.-A.; Deveaud, B.; Emery, J.-Y.; Dagens, B.

2002-10-01

Experimental demonstration of optical speedup at transparency (OSAT) has been performed on a 1 mm long semiconductor optical amplifiers (SOA). OSAT is a recently proposed scheme that decreases the recovery time of an SOA while maintaining the available gain. It is achieved by externally injecting into the SOA the beam of a separate high power laser at energies around the transparency point. Even though the experimental conditions were not optimal, a beam of 100 mW decreases the recovery time by a third when it is injected in the vicinity of the material transparency point of the device. This acceleration of the device response without detrimental reduction of the gain is found to be effective over a broad wavelength window of about 20 nm around transparency. The injection of the accelerating beam into the gain region is a less efficient solution not only because the gain is then strongly diminished but also because speeding is reduced. This originates from the reduction of the amplified spontaneous emission power in the device, which counterbalances the speeding capabilities of the external laser beam. Another advantage of the OSAT scheme is realized in relatively long SOAs, which suffer from gain overshoot under strong current injection. Simulations show that OSAT decreases the gain overshoot, which should enable us to use OSAT to further speedup the response of long SOAs.

In-situ photopolymerization and monitoring device for controlled shaping of tissue fillers, replacements, or implants

NASA Astrophysics Data System (ADS)

Schmocker, Andreas M.; Khoushabi, Azadeh; Bourban, Pierre-Etienne; Schizas, Constantin; Pioletti, Dominique; Moser, Christophe

2015-03-01

Photopolymerization is a common tool to harden materials initially in a liquid state. A surgeon can directly trigger the solidification of a dental implant or a bone or tissue filler simply by illumination. Traditionally, photopolymerization has been used mainly in dentistry. Over the last decade advances in material development including a wide range of biocompatible gel- and cement-systems open up a new avenue for in-situ photopolymerization. However, at the device level, surgical endoscopic probes are required. We present a miniaturized light probe where a photoactive material can be 1) mixed, pressurized and injected 2) photopolymerized or photoactivated and 3) monitored during the chemical reaction. The device enables surgeries to be conducted through a hole smaller than 1 mm in diameter. Beside basic injection mechanics, the tool consists of an optical fiber guiding the light required for photopolymerization and for chemical analysis. Combining photorheology and fluorescence spectroscopy, the current state of the photopolymerization is inferred and monitored in real time. Biocompatible and highly tuneable Poly-Ethylene-Glycol (PEG) hydrogels were used as the injection material. The device was tested on a model for intervertebral disc replacement. Gels were successfully implanted into a bovine caudal model and mechanically tested in-vitro during two weeks. The photopolymerized gel was evaluated at the tissue level (adherence and mechanical properties of the implant), at the cellular level (biocompatibility and cytotoxicity) and ergonomic level (sterilization procedure and feasibility study). This paper covers the monitoring aspect of the device.

First Plasma Results from the HIT-SI Spheromak

NASA Astrophysics Data System (ADS)

Sieck, P. E.; Hamp, W. T.; Izzo, V. A.; Jarboe, T. R.; Nelson, B. A.; O'Neill, R. G.; Redd, A. J.; Smith, R. J.

2003-10-01

HIT-SI is the newest device in the Helicity Injected Torus (HIT) program. HIT-SI is a ``bow tie'' spheromak formed and sustained by Steady Inductive Helicity Injection (SIHI) current drive. SIHI injects helicity at a nearly constant rate with no open field lines intersecting the boundary. (T. R. Jarboe, Fusion Technology 36) (1), p. 85, 1999 HIT-SI has been designed with a bow tie geometry to achieve stable high-β (>10%) spheromak equilibria. (U. Shumlak and T. R. Jarboe, Phys. Plasmas 7) (7), p. 2959, 2000 Diagnostics currently include surface magnetic probes and flux loops, visible light imaging, H-alpha line radiation monitors, voltage measurements across insulating breaks, injector current Rogowski coils, and injector flux loops. HIT-SI is currently operating in parallel with experiments on HIT-II. At the conclusion of HIT-II operations, HIT-SI will inherit a multi-point Thomson Scattering system, a scanning two-chord FIR interferometer, and other advanced diagnostics, as well as more power supplies to extend the discharge duration. Results are presented which characterize injector operation and possible evidence for spheromak formation.

Establishment of design space for high current gain in III-N hot electron transistors

NASA Astrophysics Data System (ADS)

Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

2018-01-01

This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

Single-center, single-dose, open-label, randomized, two-period crossover study on the bioavailability of methotrexate administered using a novel prefilled, needle-free delivery system.

PubMed

Bienvenu, Boris; Aouba, Achille; Gottenberg, Jacques-Eric; Verstuyft, Celine

2017-04-01

Zeneo 1 is a needle-free injection device. We performed a pharmacokinetic study to investigate the bioequivalence of methotrexate administered subcutaneously using either the needle-free injection device or a conventional needle and syringe. This was a single-dose, open-label, laboratory-blind, randomized crossover study performed in adult healthy volunteers. Each participant received two methotrexate injections (each 25 mg), one via needle-free injection device and one via conventional injection, with a 21-28 day wash-out interval between dosing. For each participant, the administration site for both injections was either the abdomen or the thigh. The primary pharmacokinetic outcome parameters were AUC (0- t ) and C max . Bioequivalence was assessed by standard criteria: whether 90% confidence intervals of geometric mean ratios for the two administration methods were within 80-125%. Fifty-two individuals completed the study. Bioequivalence criteria were met for AUC (0- t ) , for the overall analysis (both injection sites: 90% confidence interval: 99.4-103.1%), and for each injection site separately. Bioequivalence was similarly demonstrated with AUC (0-∞) . Bioequivalence criteria for C max were fulfilled for abdominal administration but not for the overall analysis. Injection via the needle-free injection device was well tolerated. Limitations include conducting the study in healthy volunteers and the relatively small subject number (albeit satisfactory for bioequivalence). This study shows that methotrexate injection via needle-free injection device is bioequivalent to a conventional needle and syringe in relation to AUC (0- t ) and AUC (0-∞) . Studies of needle-free injection device use in patients requiring methotrexate therapy are planned.

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon

NASA Astrophysics Data System (ADS)

Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

2016-11-01

Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide-semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr3+ ions. Analysis on the current-voltage characteristic of the ZrO2-based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen-vacancy-related states with the holes in the defect level pertaining to Zr3+ ions brings about the EL emissions.

Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tondini, S.; Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena; Pucker, G.

2016-09-07

The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minoritymore » carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.« less

Impact of Illumination on Charge Injection and Accumulation in Organic Transistor in Presence of Plasmonic Nanoparticles

NASA Astrophysics Data System (ADS)

Lee, Keanchuan; Weis, Martin; Chen, Xiangyu; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2013-04-01

Effects of illumination on the carrier injection and transport due to photogenerated carriers were investigated in pentacene organic field-effect transistor (OFET). A plasmonic nanoparticles self-assembled monolayer (SAM) was incorporated in pentacene FET to act to enhance the photo-carrier generation. The influence of nanoparticles (NPs) on the photogeneration as well as on the charge trapping has been investigated using the current-voltage (I-V) and impedance spectroscopy (IS) measurements. The I-V results proved higher amount of photogenerated charge in presence of NPs even though this device has the contact resistance about two orders higher and effective mobility an order lower than the reference device without plasmonic NPs. The IS analysis of relaxation times verified strong influence of NPs on the charge trapping.

Intradermal needle-free powdered drug injection by a helium-powered device.

PubMed

Liu, John; Hogan, N Catherine; Hunter, Ian W

2012-01-01

We present a new method for needle-free powdered drug injection via a bench-top gas-powered device. This injector provides an alternative method of vaccine delivery to address the cold chain problem--the cost and risk of transporting temperature sensitive vaccines to developing countries. The device houses interchangeable nozzle inserts to vary orifice geometries and is capable of delivering polymer beads (1-5 µm diameter) into the dermal layer of porcine tissue. Results for injection shape and injection depth versus nozzle orifice diameter demonstrate the device's controllability.

Effects of Lightning Injection on Power-MOSFETs

NASA Technical Reports Server (NTRS)

Celaya, Jose; Saha, Sankalita; Wysocki, Phil; Ely, Jay; Nguyen, Truong; Szatkowski, George; Koppen, Sandra; Mielnik, John; Vaughan, Roger; Goebel, Kai

2009-01-01

Lightning induced damage is one of the major concerns in aircraft health monitoring. Such short-duration high voltages can cause significant damage to electronic devices. This paper presents a study on the effects of lightning injection on power metal-oxide semiconductor field effect transistors (MOSFETs). This approach consisted of pin-injecting lightning waveforms into the gate, drain and/or source of MOSFET devices while they were in the OFF-state. Analysis of the characteristic curves of the devices showed that for certain injection modes the devices can accumulate considerable damage rendering them inoperable. Early results demonstrate that a power MOSFET, even in its off-state, can incur considerable damage due to lightning pin injection, leading to significant deviation in its behavior and performance, and to possibly early device failures.

Electric field induced spin-polarized current

DOEpatents

Murakami, Shuichi; Nagaosa, Naoto; Zhang, Shoucheng

2006-05-02

A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

The feasibility of using solution-processed aqueous La2O3 as effective hole injection layer in organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Yan; Li, Wanshu; Zhang, Ting; Yang, Bo; Zheng, Qinghong; Xu, Jiwen; Wang, Hua; Wang, Lihui; Zhang, Xiaowen; Wei, Bin

2018-01-01

Low-cost and scalable manufacturing boosts organic electronic devices with all solution process. La2O3 powders and corresponding aqueous solutions are facilely synthesized. Atomic force microscopy and scanning electron microscopy measurements show that solution-processed La2O3 behaves superior film morphology. X-ray diffraction and X-ray photoelectron spectroscopy measurements verify crystal phase and typical La signals. In comparison with the most widely-used hole injection layers (HILs) of MoOx and poly(ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), enhanced luminous efficiency is observed in organic light-emitting diode (OLED) using solution-processed La2O3 HIL. Current-voltage, impedance-voltage and phase angle-voltage transition curves clarify that solution-processed La2O3 behaves nearly comparable hole injection capacity to MoOx and PEDOT:PSS, and favorably tailors carrier balance. Moreover, the hole injection mechanism of solution-processed La2O3 is proven to be predominantly controlled by Fowler-Nordheim tunneling process and the hole injection barrier height between ITO and NPB via La2O3 interlayer is estimated to be 0.098 eV. Our experiments provide a feasible application of La2O3 in organic electronic devices with solution process.

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Flux amplification and sustainment of ST plasmas by multi-pulsed coaxial helicity injection on HIST

NASA Astrophysics Data System (ADS)

Higashi, T.; Ishihara, M.; Kikuchi, Y.; Fukumoto, N.; Nagata, M.

2010-11-01

The Helicity Injected Spherical Torus (HIST) device has been developed towards high-current start up and sustainment by Multi-pulsed Coaxial Helicity Injection (M-CHI) method. Multiple pulses operation of the coaxial plasma gun can build the magnetic field of STs and spheromak plasmas in a stepwise manner. So far, successive gun pulses on SSPX at LLNL were demonstrated to maintain the magnetic field of spheromak in a quasi-steady state against resistive decay [1]. The resistive 3D-MHD numerical simulation [2] for STs reproduced the current amplification by the M-CHI method and confirmed that stochastic magnetic field was reduced during the decay phase. By double pulsed operation on HIST, the plasma current was effectively amplified against the resistive decay. The life time increases up to 10 ms which is longer than that in the single CHI case (4 ms). The edge poloidal fields last between 0.5 ms and 6 ms like a repetitive manner. During the second driven phase, the toroidal ion flow is driven in the same direction as the plasma current as well as in the initial driven phase. At the meeting, we will discuss a current amplification mechanism based on the merging process with the plasmoid injected secondly from the gun. [1] B. Hudson et al., Phys. Plasmas Vol.15, 056112 (2008). [2] Y. Kagei et al., J. Plasma Fusion Res. Vol.79, 217 (2003).

Multi-megawatt, gigajoule plasma operation in Tore Supra

NASA Astrophysics Data System (ADS)

Dumont, R. J.; Goniche, M.; Ekedahl, A.; Saoutic, B.; Artaud, J.-F.; Basiuk, V.; Bourdelle, C.; Corre, Y.; Decker, J.; Elbèze, D.; Giruzzi, G.; Hoang, G.-T.; Imbeaux, F.; Joffrin, E.; Litaudon, X.; Lotte, Ph; Maget, P.; Mazon, D.; Nilsson, E.; The Tore Supra Team

2014-07-01

Integrating several important technological elements required for long pulse operation in magnetic fusion devices, the Tore Supra tokamak routinely addresses the physics and technology issues related to this endeavor and, as a result, contributes essential information on critical issues for ITER. During the last experimental campaign, components of the radiofrequency system including an ITER relevant launcher (passive active multijunction (PAM)) and continuous wave/3.7 GHz klystrons, have been extensively qualified, and then used to develop steady state scenarios in which the lower hybrid (LH), ion cyclotron (IC) and electron cyclotron (EC) systems have been combined in fully stationary shots (duration ˜150 s, injected power up to ˜8 MW, injected/extracted energy up to ˜1 GJ). Injection of LH power in the 5.0-6.0 MW range has extended the domain of accessible plasma parameters to higher densities and non-inductive currents. These discharges exhibit steady electron internal transport barriers (ITBs). We report here on various issues relevant to the steady state operation of future devices, ranging from operational aspects and limitations related to the achievement of long pulses in a fully actively cooled fusion device (e.g. overheating due to fast particle losses), to more fundamental plasma physics topics. The latter include a beneficial influence of IC resonance heating on the magnetohydrodynamic (MHD) stability in these discharges, which has been studied in detail. Another interesting observation is the appearance of oscillations of the central temperature with typical periods of the order of one to several seconds, caused by a nonlinear interplay between LH deposition, MHD activity and bootstrap current in the presence of an ITB.

Multiplexed detection of nitrate and nitrite for capillary electrophoresis with an automated device for high injection efficiency.

PubMed

Gao, Leyi; Patterson, Eric E; Shippy, Scott A

2006-02-01

A simple automated nanoliter scale injection device which allows for reproducible 5 nL sample injections from samples with a volume of <1 microL is successfully used for conventional capillary electrophoresis (CE) and Hadamard transform (HT) CE detection. Two standard fused silica capillaries are assembled axially through the device to function as an injection and a separation capillary. Sample solution is supplied to the injection capillary using pressure controlled with a solenoid valve. Buffer solution flows gravimetrically by the junction of the injection and separation capillaries and is also gated with a solenoid valve. Plugs of sample are pushed into the space between the injection and separation capillaries for electrokinectic injection. To evaluate the performance of the injection device, several optimizations are performed including the influence of flow rates, the injected sample volume and the control of the buffer transverse flow on the overall sensitivity. The system was then applied to HT-CE-UV detection for the signal-to-noise ratio (S/N) improvement of the nitric oxide (NO) metabolites, nitrite and nitrate. In addition, signal averaging was performed to explore the possibility of greater sensitivity enhancements compared to single injections.

High-Temperature Spintronic Devices and Circuits in Absence of Magnetic Field

DTIC Science & Technology

2012-04-23

non-equilibrium Green’s function (NEGF) formalism. • Molecular beam epitaxy (MBE) growth of ferromagnetic metals (Fe, MnAs) and...measured for two diode injection currents in the Faraday geometry. The quantum dot microcavity device was grown by molecular beam epitaxy with a low...channel (10 nm, lxlOl9j Mn-doped) / undoped-AlAs (1 nm) tunnel barrier / undoped-GaAs (0.5 nm) / MnAs (25 nm) were grown by molecular beam epitaxy (MBE

Dependence of threshold current on the number of wells in AlGaAs-GaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Fletcher, E.D.; Woodbridge, K.

1985-08-01

GaAs-AlGaAs multiple quantum well injection lasers have been grown by molecular beam epitaxy with different numbers (N) of uncoupled GaAs wells 25 A wide symmetrically disposed about the center of a 4000-A-wide waveguide. The devices emit at about 770 nm and for N = 4 the broad area threshold current density is 1.1 kA cm/sup -2/. The threshold current increases with increasing N (2

Rapid and low-cost prototyping of medical devices using 3D printed molds for liquid injection molding.

PubMed

Chung, Philip; Heller, J Alex; Etemadi, Mozziyar; Ottoson, Paige E; Liu, Jonathan A; Rand, Larry; Roy, Shuvo

2014-06-27

Biologically inert elastomers such as silicone are favorable materials for medical device fabrication, but forming and curing these elastomers using traditional liquid injection molding processes can be an expensive process due to tooling and equipment costs. As a result, it has traditionally been impractical to use liquid injection molding for low-cost, rapid prototyping applications. We have devised a method for rapid and low-cost production of liquid elastomer injection molded devices that utilizes fused deposition modeling 3D printers for mold design and a modified desiccator as an injection system. Low costs and rapid turnaround time in this technique lower the barrier to iteratively designing and prototyping complex elastomer devices. Furthermore, CAD models developed in this process can be later adapted for metal mold tooling design, enabling an easy transition to a traditional injection molding process. We have used this technique to manufacture intravaginal probes involving complex geometries, as well as overmolding over metal parts, using tools commonly available within an academic research laboratory. However, this technique can be easily adapted to create liquid injection molded devices for many other applications.

Safer injections following a new national medicine policy in the public sector, Burkina Faso 1995 – 2000

PubMed Central

Logez, Sophie; Hutin, Yvan; Somda, Paul; Thuault, Jérôme; Holloway, Kathleen

2005-01-01

Background The common failure of health systems to ensure adequate and sufficient supplies of injection devices may have a negative impact on injection safety. We conducted an assessment in April 2001 to determine to which extent an increase in safe injection practices between 1995 and 2000 was related to the increased access to injection devices because of a new essential medicine policy in Burkina Faso. Methods We reviewed outcomes of the new medicine policy implemented in1995. In April 2001, a retrospective programme review assessed the situation between 1995 and 2000. We visited 52 health care facilities where injections had been observed during a 2000 injection safety assessment and their adjacent operational public pharmaceutical depots. Data collection included structured observations of available injection devices and an estimation of the proportion of prescriptions including at least one injection. We interviewed wholesaler managers at national and regional levels on supply of injection devices to public health facilities. Results Fifty of 52 (96%) health care facilities were equipped with a pharmaceutical depot selling syringes and needles, 37 (74%) of which had been established between 1995 and 2000. Of 50 pharmaceutical depots, 96% had single-use 5 ml syringes available. At all facilities, patients were buying syringes and needles out of the depot for their injections prescribed at the dispensary. While injection devices were available in greater quantities, the proportion of prescriptions including at least one injection remained stable between 1995 (26.5 %) and 2000 (23.8 %). Conclusion The implementation of pharmaceutical depots next to public health care facilities increased geographical access to essential medicines and basic supplies, among which syringes and needles, contributing substantially to safer injection practices in the absence of increased use of therapeutic injections. PMID:16364178

Controlling Gilbert damping in a YIG film using nonlocal spin currents

NASA Astrophysics Data System (ADS)

Haidar, M.; Dürrenfeld, P.; Ranjbar, M.; Balinsky, M.; Fazlali, M.; Dvornik, M.; Dumas, R. K.; Khartsev, S.; Åkerman, J.

2016-11-01

We demonstrate the control of Gilbert damping in 65-nm-thick yttrium iron garnet (YIG) films using a spin-polarized current generated by a direct current through a nanocontact, spin filtered by a thin Co layer. The magnetodynamics of both the YIG and the Co layers can be excited by a pulse-modulated microwave current injected through the nanocontact and the response detected as a lock-in amplified voltage over the device. The spectra show three clear peaks, two associated with the ferromagnetic resonance (FMR) in each layer, and an additional Co mode with a higher wave vector proportional to the inverse of the nanocontact diameter. By varying the sign and magnitude of the direct nanocontact current, we can either increase or decrease the linewidth of the YIG FMR peak consistent with additional positive or negative damping being exerted by the nonlocal spin current injected into the YIG film. Our nanocontact approach thus offers an alternative route in the search for auto-oscillations in YIG films.

Injection-locking of terahertz quantum cascade lasers up to 35GHz using RF amplitude modulation.

PubMed

Gellie, Pierre; Barbieri, Stefano; Lampin, Jean-François; Filloux, Pascal; Manquest, Christophe; Sirtori, Carlo; Sagnes, Isabelle; Khanna, Suraj P; Linfield, Edmund H; Davies, A Giles; Beere, Harvey; Ritchie, David

2010-09-27

We demonstrate that the cavity resonance frequency - the round-trip frequency - of Terahertz quantum cascade lasers can be injection-locked by direct modulation of the bias current using an RF source. Metal-metal and single-plasmon waveguide devices with roundtrip frequencies up to 35GHz have been studied, and show locking ranges above 200MHz. Inside this locking range the laser round-trip frequency is phase-locked, with a phase noise determined by the RF-synthesizer. We find a square-root dependence of the locking range with RF-power in agreement with classical injection-locking theory. These results are discussed in the context of mode-locking operation.

Surface modification and characterization of indium-tin oxide for organic light-emitting devices.

PubMed

Zhong, Z Y; Jiang, Y D

2006-10-15

In this work, we used different treatment methods (ultrasonic degreasing, hydrochloric acid treatment, and oxygen plasma) to modify the surfaces of indium-tin oxide (ITO) substrates for organic light-emitting devices. The surface properties of treated ITO substrates were studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), sheet resistance, contact angle, and surface energy measurements. Experimental results show that the ITO surface properties are closely related to the treatment methods, and the oxygen plasma is more efficient than the other treatments since it brings about smoother surfaces, lower sheet resistance, higher work function, and higher surface energy and polarity of the ITO substrate. Moreover, polymer light-emitting electrochemical cells (PLECs) with differently treated ITO substrates as device electrodes were fabricated and characterized. It is found that surface treatments of ITO substrates have a certain degree of influence upon the injection current, brightness, and efficiency, but hardly upon the turn-on voltages of current injection and light emission, which are in agreement with the measured optical energy gap of the electroluminescent polymer. The oxygen plasma treatment on the ITO substrate yields the best performance of PLECs, due to the improvement of interface formation and electrical contact of the ITO substrate with the polymer blend in the PLECs.

Effect of traps on the charge transport in semiconducting polymer PCDTBT

NASA Astrophysics Data System (ADS)

Khan, Mohd Taukeer; Agrawal, Vikash; Almohammedi, Abdullah; Gupta, Vinay

2018-07-01

Organic semiconductors (OSCs) are nowadays called upon as promising candidates for next generation electronics devices. Due to disorder structure of these materials, a high density of traps are present in their energy band gap which affect the performance of these devices. In the present manuscript, we have investigated the role of traps on charge transport in PCDTBT thin film by measuring the temperature dependent J(V) characteristics in hole only device configuration. The obtained results were analyzed by space charge limited (SCL) conduction model. It has been found that the room temperature J(V) characteristics follow Mott-Gurney square law for trap-free SCL conduction. But below 278 K, the current increases according to trap-filling SCL law with traps distributed exponentially in the band gap of semiconductor. Furthermore, after reaching a crossover voltage of VC ∽ 12 V, all the traps filled by injected carriers and the trap-filling SCL current switch to trap-free SCL current. The hole mobility of trap-free SCL current is about one order higher as compared trap-filling SCL current and remains constant with temperature.

MHD and Reconnection Activity During Local Helicity Injection

NASA Astrophysics Data System (ADS)

Barr, J. L.; Bongard, M. W.; Burke, M. G.; Fonck, R. J.; Reusch, J. A.; Richner, N. J.

2016-10-01

Scaling local helicity injection (LHI) to larger devices requires a validated, predictive model of its current drive mechanism. NIMROD simulations predict the injected helical current streams persist in the edge and periodically reconnect to form axisymmetric current rings that travel into the bulk plasma to grow Ip and poloidal flux. In simulation, these events result in discrete bursts of Alfvénic-frequency MHD activity and jumps in Ip of order ΔIp Iinj , in qualitative agreement with large n = 1 activity found in experiment. Fast imaging prior to tokamak formation supports the instability of, and apparent reconnection between, adjacent helical streams. The bursts exhibit toroidal amplitude asymmetries consistent with a kink structure singly line-tied to the injectors. Internal measurements localize this activity to the injector radial location. Pairwise correlations of poloidal Mirnov coil amplitude and phase match expectations of an edge-localized current stream carrying Iinj. Prior to tokamak formation, reconnection from both adjacent helical windings and co-injected current streams are shown to strongly heat impurity ions. After tokamak formation, strong anomalous ion heating in the plasma edge is attributed to continuous reconnection between colinear streams. The n = 1 bursts occur less frequently as Ip rises, likely caused by increased stream stability as Bv rises and qedge drops. This evidence supports the general NIMROD model of LHI, confirms the persistence and role of the edge current streams, and motivates experiments at higher Iinj and BT. Supported by US DOE Grants DE-FG02-96ER54375, DE-SC0006928.

Toward spin-based Magneto Logic Gate in Graphene

NASA Astrophysics Data System (ADS)

Wen, Hua; Dery, Hanan; Amamou, Walid; Zhu, Tiancong; Lin, Zhisheng; Shi, Jing; Zutic, Igor; Krivorotov, Ilya; Sham, Lu; Kawakami, Roland

Graphene has emerged as a leading candidate for spintronic applications due to its long spin diffusion length at room temperature. A universal magnetologic gate (MLG) based on spin transport in graphene has been recently proposed as the building block of a logic circuit which could replace the current CMOS technology. This MLG has five ferromagnetic electrodes contacting a graphene channel and can be considered as two three-terminal XOR logic gates. Here we demonstrate this XOR logic gate operation in such a device. This was achieved by systematically tuning the injection current bias to balance the spin polarization efficiency of the two inputs, and offset voltage in the detection circuit to obtain binary outputs. The output is a current which corresponds to different logic states: zero current is logic `0', and nonzero current is logic `1'. We find improved performance could be achieved by reducing device size and optimizing the contacts.

Development of 8-hydroxyquinoline metal based organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Xiaodong

Because of its potential application for flat panel displays, solid-state lighting and 1.5 mum emitter for fiber optical communications, organic light-emitting diodes (OLEDs) have been intensively researched. One of the major problems with current OLED technology relates to inefficient electron injection at the cathode interface, which causes high driving voltage and poor device stability. Making a low resistance cathode contact for electron injection is critical to device performance. This work mainly focuses on cathode interface design and engineering. The Ohmic contact using a structure of C60/LiF/Al has been developed in electron only devices. It is found that application of the C60/LiF/Al contact to Alq based OLEDs leads to a dramatic reduction in driving voltages, a significant improvement in power efficiency, and a much slower aging process. A new cathode structure based on metal-organic-metal (MOM) tri-layer films has been developed. It is found that MOM cathodes reduce reflection by deconstructive optical interference from two metal films. The absolute reflectance from the MOM tr-ilayer films can be reduced to as low as 7% in the visible light spectrum. In actual working devices, the reflectance can be reduced from ˜80% to ˜20%. MOM cathodes provide a potential low-cost solution for high contrast full-color OLED displays. Low voltage Erq based OLEDs at 1.5 mum emission have been developed. The Erq/Ag cathode interface has been found to be efficient for electron injection. Dramatic improvement in driving voltage and power efficiency has been realized by implementing Bphen and C60 into Erq devices as an electron transport layer. Integration of Erq devices on Si wafers has also been demonstrated.

Rich catalytic injection

DOEpatents

Veninger, Albert [Coventry, CT

2008-12-30

A gas turbine engine includes a compressor, a rich catalytic injector, a combustor, and a turbine. The rich catalytic injector includes a rich catalytic device, a mixing zone, and an injection assembly. The injection assembly provides an interface between the mixing zone and the combustor. The injection assembly can inject diffusion fuel into the combustor, provides flame aerodynamic stabilization in the combustor, and may include an ignition device.

Utilizing Schottky barriers to suppress short-channel effects in organic transistors

NASA Astrophysics Data System (ADS)

Fernández, Anton F.; Zojer, Karin

2017-10-01

Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest height necessary to exactly compensate for the premature turn on. This approach offers a substantial enhancement of the ON-OFF ratio. We show that this roots in the fact that such optimal barrier heights offer an excellent compromise between an OFF current diminished by orders of magnitude and an only slightly reduced ON current.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

PubMed Central

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-01-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Effect of oscillator strength and intermediate resonance on the performance of resonant phonon-based terahertz quantum cascade lasers

NASA Astrophysics Data System (ADS)

Fathololoumi, S.; Dupont, E.; Wasilewski, Z. R.; Chan, C. W. I.; Razavipour, S. G.; Laframboise, S. R.; Huang, Shengxi; Hu, Q.; Ban, D.; Liu, H. C.

2013-03-01

We experimentally investigated the effect of oscillator strength (radiative transition diagonality) on the performance of resonant phonon-based terahertz quantum cascade lasers that have been optimized using a simplified density matrix formalism. Our results show that the maximum lasing temperature (Tmax) is roughly independent of laser transition diagonality within the lasing frequency range of the devices under test (3.2-3.7 THz) when cavity loss is kept low. Furthermore, the threshold current can be lowered by employing more diagonal transition designs, which can effectively suppress parasitic leakage caused by intermediate resonance between the injection and the downstream extraction levels. Nevertheless, the current carrying capacity through the designed lasing channel in more diagonal designs may sacrifice even more, leading to electrical instability and, potentially, complete inhibition of the device's lasing operation. We propose a hypothesis based on electric-field domain formation and competition/switching of different current-carrying channels to explain observed electrical instability in devices with lower oscillator strengths. The study indicates that not only should designers maximize Tmax during device optimization but also they should always consider the risk of electrical instability in device operation.

Photovoltaic studies of Dye Sensitized Solar cells Fabricated from Microwave Exposed Photo anodes

NASA Astrophysics Data System (ADS)

Ramachandran, Anju; Sreekala, C. O.; Sreelatha, K. S.; Jinchu, I.

2018-02-01

The configuration of Dye Sensitized solar cells (DSSC), consists of sintered nanoparticle titanium dioxide film, dyes, electrolyte and counter electrodes. Upon the absorption of photons by the dye molecules, excitons are generated, subsequently electrons are injected into the TiO2 photoanode. Afterward the electrons injected into the TiO2 photoanode, to produce photocurrent, scavenged by redox couple, and the hole transport to the photo cathode. The power conversion efficiency of the device depends on the amount of dye adsorbed by the photoanode. This paper explores in enhancing the efficiency of the device by controlled microwave exposure. With same exposure time, the photoanode is exposed at three different frequencies. SEM analysis is carried out to find the porosity of the photoanode on exposure. Current density is found to have an effect on microwave exposure.

Tunneling Injection and Exciton Diffusion of White Organic Light-Emitting Diodes with Composed Buffer Layers

NASA Astrophysics Data System (ADS)

Yang, Su-Hua; Wu, Jian-Ping; Huang, Tao-Liang; Chung, Bin-Fong

2018-02-01

Four configurations of buffer layers were inserted into the structure of a white organic light emitting diode, and their impacts on the hole tunneling-injection and exciton diffusion processes were investigated. The insertion of a single buffer layer of 4,4'-bis(carbazol-9-yl)biphenyl (CBP) resulted in a balanced carrier concentration and excellent color stability with insignificant chromaticity coordinate variations of Δ x < 0.023 and Δ y < 0.023. A device with a 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) buffer layer was beneficial for hole tunneling to the emission layer, resulting in a 1.45-fold increase in current density. The tunneling of holes and the diffusion of excitons were confirmed by the preparation of a dual buffer layer of CBP:tris-(phenylpyridine)-iridine (Ir(ppy)3)/BCP. A maximum current efficiency of 12.61 cd/A with a luminance of 13,850 cd/m2 was obtained at 8 V when a device with a dual-buffer layer of CBP:6 wt.% Ir(ppy)3/BCP was prepared.

Electrical spin injection from CoFe2O4 into p-Si semiconductor across MgO tunnel barrier for spin electronics

NASA Astrophysics Data System (ADS)

Panda, J.; Maji, Nilay; Nath, T. K.

2017-05-01

The room temperature spin injection and detection in non magnetic p-Si semiconductor have been studied in details in our CoFe2O4 (CFO)/MgO/p-Si heterojunction. The 3-terminal tunnel contacts have been made on the device for transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The spin accumulation in non magnetic p-Si semiconductor has been observed at different bias current under the applied magnetic field parallel to the film plane in the temperature range of 40-300 K. We have observed a giant spin accumulation in p-Si semiconductor using MgO/CFO tunnel contact. The Hanley effect is used to control the reduction of spin accumulation by applying magnetic field perpendicular to the carrier spin in the p-Si. The accumulated spin signal decays as a function of applied magnetic field for fixed bias current. These results will enable utilization of the spin degree of freedom in complementary Si devices and its further development.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

NASA Astrophysics Data System (ADS)

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors.

PubMed

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-07-21

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials.

Universal diffusion-limited injection and the hook effect in organic thin-film transistors

PubMed Central

Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

2016-01-01

The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

Effects of interface electric field on the magnetoresistance in spin devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.

2014-04-28

An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interfacemore » electronic structures.« less

Rapid and Low-cost Prototyping of Medical Devices Using 3D Printed Molds for Liquid Injection Molding

PubMed Central

Chung, Philip; Heller, J. Alex; Etemadi, Mozziyar; Ottoson, Paige E.; Liu, Jonathan A.; Rand, Larry; Roy, Shuvo

2014-01-01

Biologically inert elastomers such as silicone are favorable materials for medical device fabrication, but forming and curing these elastomers using traditional liquid injection molding processes can be an expensive process due to tooling and equipment costs. As a result, it has traditionally been impractical to use liquid injection molding for low-cost, rapid prototyping applications. We have devised a method for rapid and low-cost production of liquid elastomer injection molded devices that utilizes fused deposition modeling 3D printers for mold design and a modified desiccator as an injection system. Low costs and rapid turnaround time in this technique lower the barrier to iteratively designing and prototyping complex elastomer devices. Furthermore, CAD models developed in this process can be later adapted for metal mold tooling design, enabling an easy transition to a traditional injection molding process. We have used this technique to manufacture intravaginal probes involving complex geometries, as well as overmolding over metal parts, using tools commonly available within an academic research laboratory. However, this technique can be easily adapted to create liquid injection molded devices for many other applications. PMID:24998993

Observation of spin-polarized electron transport in Alq3 by using a low work function metal

NASA Astrophysics Data System (ADS)

Jang, Hyuk-Jae; Pernstich, Kurt P.; Gundlach, David J.; Jurchescu, Oana D.; Richter, Curt. A.

2012-09-01

We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to the engineering of the band alignment. The devices exhibit symmetric current-voltage (I-V) characteristics indicating identical metal contacts on Alq3, and up to 4% of positive magnetoresistance was observed at 4.5 K. In contrast, simultaneously fabricated Co/Alq3/NiFe devices displayed asymmetric I-V curves due to the different metal electrodes, and spin-valve effects were not observed.

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Jaehoon; Park, Young-Shin; Klimov, Victor Ivanovich

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge—realization of lasing with electrical injection—remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here in this paper, we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, wemore » apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm -2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm -2 we achieve the population inversion of the band-edge states.« less

Optical gain in colloidal quantum dots achieved with direct-current electrical pumping

DOE PAGES

Lim, Jaehoon; Park, Young-Shin; Klimov, Victor Ivanovich

2017-11-20

Chemically synthesized semiconductor quantum dots (QDs) can potentially enable solution-processable laser diodes with a wide range of operational wavelengths, yet demonstrations of lasing from the QDs are still at the laboratory stage. An important challenge—realization of lasing with electrical injection—remains unresolved, largely due to fast nonradiative Auger recombination of multicarrier states that represent gain-active species in the QDs. Here in this paper, we present population inversion and optical gain in colloidal nanocrystals realized with direct-current electrical pumping. Using continuously graded QDs, we achieve a considerable suppression of Auger decay such that it can be outpaced by electrical injection. Further, wemore » apply a special current-focusing device architecture, which allows us to produce high current densities (j) up to ~18 A cm -2 without damaging either the QDs or the injection layers. The quantitative analysis of electroluminescence and current-modulated transmission spectra indicates that with j = 3-4 A cm -2 we achieve the population inversion of the band-edge states.« less

Apparatus and method to inject a reductant into an exhaust gas feedstream

DOEpatents

Viola, Michael B [Macomb Township, MI

2009-09-22

An exhaust aftertreatment system for an internal combustion engine is provided including an apparatus and method to inject a reductant into the exhaust gas feedstream. Included is a fuel metering device adapted to inject reductant into the exhaust gas feedstream and a controllable pressure regulating device. A control module is operatively connected to the reductant metering device and the controllable pressure regulating device, and, adapted to effect flow of reductant into the exhaust gas feedstream over a controllable flow range.

Effect of inserting a hole injection layer in organic light-emitting diodes: A numerical approach

NASA Astrophysics Data System (ADS)

Lee, Hyeongi; Hwang, Youngwook; Won, Taeyoung

2015-01-01

For investigating the effect of inserting a hole injection layer (HIL), we carried out a computational study concerning organic light-emitting diodes (OLEDs) that had a thin CuPc layer as the hole injection layer. We used S-TAD (2, 2', 7, 7'-tetrakis-(N, Ndiphenylamino)-9, 9-spirobifluoren) for the hole transfer layer, S-DPVBi (4, 4'-bis (2, 2'-diphenylvinyl)-1, 1'-spirobiphenyl) for the emission layer and Alq3 (Tris (8-hyroxyquinolinato) aluminium) for the electron transfer layer. This tri-layer device was compared with four-layer devices. To this tri-layer device, we added a thin CuPc layer, which had a 5.3 eV highest occupied molecular orbital (HOMO) level and a 3.8 eV lowest unoccupied molecular orbital (LUMO) level, as a hole injection layer, and we chose this device for Device A. Also, we varied the LUMO level or the HOMO level of the thin CuPc layer. These two devices were identified as Device C and Device D, respectively. In this paper, we simulated the carrier injection, transport and recombination in these four devices. Thereby, we showed the effect of the HIL, and we demonstrated that the characteristics of these devices were improved by adding a thin layer of CuPc between the anode and the HTL.

Carrier Injection and Transport in Blue Phosphorescent Organic Light-Emitting Device with Oxadiazole Host

PubMed Central

Chiu, Tien-Lung; Lee, Pei-Yu

2012-01-01

In this paper, we investigate the carrier injection and transport characteristics in iridium(III)bis[4,6-(di-fluorophenyl)-pyridinato-N,C2′]picolinate (FIrpic) doped phosphorescent organic light-emitting devices (OLEDs) with oxadiazole (OXD) as the bipolar host material of the emitting layer (EML). When doping Firpic inside the OXD, the driving voltage of OLEDs greatly decreases because FIrpic dopants facilitate electron injection and electron transport from the electron-transporting layer (ETL) into the EML. With increasing dopant concentration, the recombination zone shifts toward the anode side, analyzed with electroluminescence (EL) spectra. Besides, EL redshifts were also observed with increasing driving voltage, which means the electron mobility is more sensitive to the electric field than the hole mobility. To further investigate carrier injection and transport characteristics, FIrpic was intentionally undoped at different positions inside the EML. When FIrpic was undoped close to the ETL, driving voltage increased significantly which proves the dopant-assisted-electron-injection characteristic in this OLED. When the undoped layer is near the electron blocking layer, the driving voltage is only slightly increased, but the current efficiency is greatly reduced because the main recombination zone was undoped. However, non-negligible FIrpic emission is still observed which means the recombination zone penetrates inside the EML due to certain hole-transporting characteristics of the OXD. PMID:22837713

A 5 nW Quasi-Linear CMOS Hot-Electron Injector for Self-Powered Monitoring of Biomechanical Strain Variations.

PubMed

Zhou, Liang; Abraham, Adam C; Tang, Simon Y; Chakrabartty, Shantanu

2016-12-01

Piezoelectricity-driven hot-electron injectors (p-HEI) are used for self-powered monitoring of mechanical activity in biomechanical implants and structures. Previously reported p-HEI devices operate by harvesting energy from a piezoelectric transducer to generate current and voltage references which are then used for initiating and controlling the process of hot-electron injection. As a result, the minimum energy required to activate the device is limited by the power requirements of the reference circuits. In this paper we present a p-HEI device that operates by directly exploiting the self-limiting capability of an energy transducer when driving the process of hot-electron injection in a pMOS floating-gate transistor. As a result, the p-HEI device can activate itself at input power levels less than 5 nW. Using a prototype fabricated in a 0.5- [Formula: see text] bulk CMOS process we validate the functionality of the proposed injector and show that for a fixed input power, its dynamics is quasi-linear with respect to time. The paper also presents measurement results using a cadaver phantom where the fabricated p-HEI device has been integrated with a piezoelectric transducer and is used for self-powered monitoring of mechanical activity.

Radiesse: Advanced Techniques and Applications for a Unique and Versatile Implant.

PubMed

Eviatar, Joseph; Lo, Christopher; Kirszrot, James

2015-11-01

Radiesse is a well-tolerated facial injectable with unique filling and lifting capabilities. Although initially approved for facial volumizing in HIV-related lipodystrophy patients, it quickly gained wide acceptance for aesthetic facial rejuvenation. In the USA, the Food and Drug Administration has approved several new indications for its use. This synopsis presents the experience and injection techniques currently favored by the primary author after many years of use in thousands of patients. The anecdotal practice of an experienced injector is presented along with the current Food and Drug Administration-approved standards of Radiesse injection. Radiesse has many on- and off-label applications that can be thoughtfully incorporated into clinical practice. Its unique chemical composition allows for immediate lifting and filling with long-term collagen stimulation. The product can be reconstituted to increase its versatility and minimize adverse events. Injections can be performed in the supraperiosteal space and the subcutaneous layer and are best administered in small, calculated doses to prevent nodules or vascular occlusion. Various techniques for Radiesse injection in specific areas are discussed in detail. Radiesse is a versatile injectable implant and a valuable tool for short- and long-term cosmetic and reconstructive treatments. In addition to various off-label uses, this injectable is often used in conjunction with botox, other injectables, collagen stimulators and tightening devices. A customized reconstitution of product increases its versatility for natural appearing and long lasting results that are both economical and effective for full facial rejuvenation.

Super-Alfvénic translation of a field-reversed configuration into a large-bore dielectric chamber

NASA Astrophysics Data System (ADS)

Sekiguchi, J.; Asai, T.; Takahashi, T.

2018-01-01

An experimental device to demonstrate additional heating and control methods for a field-reversed configuration (FRC) has been developed. The newly developed device, named FRC Amplification via Translation (FAT), has a field-reversed theta-pinch plasma source and a low-elongation dielectric (transparent quartz) confinement chamber with quasi-static confinement field. In the initial experiments on the FAT device, FRC translation and trapping were successfully demonstrated. Although the typical elongation of the trapped FRC in the confinement region was roughly three, no disruptive global instability, such as tilt, was observed. The FAT device increases the latitude to perform translation-related experiments, such as those concerning inductive current drive, equivalent neutral beam injection effects, and wave applications.

Semiconductor Nonlinear Waveguide Devices and Integrated-Mirror Etalons

NASA Astrophysics Data System (ADS)

Chuang, Chih-Li.

This dissertation investigates different III-V semiconductor devices for applications in nonlinear photonics. These include passive and active nonlinear directional couplers, current-controlled optical phase shifter, and integrated -mirror etalons. A novel method to find the propagation constants of an optical waveguide is introduced. The same method is applied, with minor modifications, to find the coupling length of a directional coupler. The method presented provides a tool for the design of optical waveguide devices. The design, fabrication, and performance of a nonlinear directional coupler are presented. This device uses light intensity to control the direction of light coming out. This is achieved through photo-generated-carriers mechanism in the picosecond regime and through the optical Stark effect in the femtosecond regime. A two-transverse -dimensions beam-propagation computation is used to model the switching behavior in the nonlinear directional coupler. It is found that, by considering the pulse degradation effect, the computation agrees well with experiments. The possibility of operating a nonlinear directional coupler with gain is investigated. It is concluded that by injecting current into the nonlinear directional coupler does not provide the advantages hoped for and the modelling using 2-D beam -propagation methods verifies that. Using current injection to change the refractive index of a waveguide, an optical phase shifter is constructed. This device has the merit of delivering large phase shift with almost no intensity modulation. A phase shift as large as 3pi is produced in a waveguide 400 μm in length. Finally, a new structure, grown by the molecular beam epitaxy machine, is described. The structure consists of two quarter-wave stacks and a spacer layer to form an integrated-mirror etalon. The theory, design principles, spectral analyses are discussed with design examples to clarify the ideas. Emphasis is given to the vertical-cavity surface-emitting laser constructed from this structure. Here we demonstrated the cw operation of the VCSEL at room temperature.

Physics of Tokamak Plasma Start-up

NASA Astrophysics Data System (ADS)

Mueller, Dennis

2012-10-01

This tutorial describes and reviews the state-of-art in tokamak plasma start-up and its importance to next step devices such as ITER, a Fusion Nuclear Science Facility and a Tokamak/ST demo. Tokamak plasma start-up includes breakdown of the initial gas, ramp-up of the plasma current to its final value and the control of plasma parameters during those phases. Tokamaks rely on an inductive component, typically a central solenoid, which has enabled attainment of high performance levels that has enabled the construction of the ITER device. Optimizing the inductive start-up phase continues to be an area of active research, especially in regards to achieving ITER scenarios. A new generation of superconducting tokamaks, EAST and KSTAR, experiments on DIII-D and operation with JET's ITER-like wall are contributing towards this effort. Inductive start-up relies on transformer action to generate a toroidal loop voltage and successful start-up is determined by gas breakdown, avalanche physics and plasma-wall interaction. The goal of achieving steady-sate tokamak operation has motivated interest in other methods for start-up that do not rely on the central solenoid. These include Coaxial Helicity Injection, outer poloidal field coil start-up, and point source helicity injection, which have achieved 200, 150 and 100 kA respectively of toroidal current on closed flux surfaces. Other methods including merging reconnection startup and Electron Bernstein Wave (EBW) plasma start-up are being studied on various devices. EBW start-up generates a directed electron channel due to wave particle interaction physics while the other methods mentioned rely on magnetic helicity injection and magnetic reconnection which are being modeled and understood using NIMROD code simulations.

Experimental results on current-driven turbulence in plasmas - a survey

NASA Astrophysics Data System (ADS)

de Kluiver, H.; Perepelkin, N. F.; Hirose, A.

1991-01-01

The experimental consequences of plasma turbulence driven by a current parallel to a magnetic field and concurrent anomalous plasma heating are reviewed, with an attempt to deduce universalities in key parameters such as the anomalous electrical conductivities observed in diverse devices. It has been found that the nature of plasma turbulence and turbulent heating depends on several parameters including the electric field, current and magnetic fields. A classification of turbulence regimes based on these parameters has been made. Experimental observations of the anomalous electrical conductivity, plasma heating, skin effect, runaway electron braking and turbulent fluctuations are surveyed, and current theoretical understanding is briefly reviewed. Experimental results recently obtained in stellarators (SIRIUS, URAGAN at Kharkov), and in tokamaks (TORTUR at Nieuwegein, STOR-1M at Saskatoon) are presented in some detail in the light of investigating the feasibility of using turbulent heating as a means of injecting a large power into toroidal devices.

Photovoltaic Retinal Prosthesis for Restoring Sight to Patients Blinded by Retinal Injury or Degeneration

DTIC Science & Technology

2016-02-01

are rapidly expanding [1][2]. Cochlear implants [3] have seen the most remarkable success in sensory neuroprosthetics, while retinal implants [4][5...intensities: Imax (bright pixels) and Imin (dark pixels). In the common return configurations (connected and monopolar), the current flowing through the...array forces the injected current to flow to the back side, which results in a potential build-up in front of the device. Near each pixel (within

Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication

NASA Astrophysics Data System (ADS)

Wang, Lele; Mathieson, Keith; Kamins, Theodore I.; Loudin, James; Galambos, Ludwig; Harris, James S.; Palanker, Daniel

2012-03-01

We have designed and fabricated a silicon photodiode array for use as a subretinal prosthesis aimed at restoring sight to patients who lost photoreceptors due to retinal degeneration. The device operates in photovoltaic mode. Each pixel in the two-dimensional array independently converts pulsed infrared light into biphasic electric current to stimulate remaining retinal neurons without a wired power connection. To enhance the maximum voltage and charge injection levels, each pixel contains three photodiodes connected in series. An active and return electrode in each pixel ensure localized current flow and are sputter coated with iridium oxide to provide high charge injection. The fabrication process consists of eight mask layers and includes deep reactive ion etching, oxidation, and a polysilicon trench refill for in-pixel photodiode separation and isolation of adjacent pixels. Simulation of design parameters included TSUPREM4 computation of doping profiles for n+ and p+ doped regions and MATLAB computation of the anti-reflection coating layers thicknesses. The main process steps are illustrated in detail, and problems encountered are discussed. The IV characterization of the device shows that the dark reverse current is on the order of 10-100 pA-negligible compared to the stimulation current; the reverse breakdown voltage is higher than 20 V. The measured photo-responsivity per photodiode is about 0.33A/W at 880 nm.

Cathode Formed by Thermal Evaporation of Ba:Al Alloy and Estimations of Barrier Height in an Organic LED

NASA Astrophysics Data System (ADS)

Ding, Lei; Zhang, Fang-Hui

2011-06-01

It is demonstrated that barium and aluminum alloy synthesized by melting in a glass tube under low vacuum is applicable for organic laser emitting diodes (LEDs) as a thin film cathode. The alloy film obtained by the thermal evaporation of pre-synthesized alloy is used in a single-boat organic LED device with the structure: indium tin oxide (ITO)/4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPB)/tris-(8-hydroxyquinoline) aluminum(Alq3)/barium:aluminum alloy. The experimental results show that devices with this alloy film cathode exhibit better current density-voltage-luminance characteristics than those with a conventional pure Al cathode, and more weight of barium in aluminum leads to better performance of the devices. Characteristics of current density versus voltage for the electron-only devices are fitted by the Richardson—Schottky emission model, indicating that the electron injection barrier has a decrease of about 0.3 eV by this alloy cathode.

A Yellow-Emitting Homoleptic Iridium(III) Complex Constructed from a Multifunctional Spiro Ligand for Highly Efficient Phosphorescent Organic Light-Emitting Diodes.

PubMed

Ren, Bao-Yi; Guo, Run-Da; Zhong, Dao-Kun; Ou, Chang-Jin; Xiong, Gang; Zhao, Xiang-Hua; Sun, Ya-Guang; Jurow, Matthew; Kang, Jun; Zhao, Yi; Li, Sheng-Biao; You, Li-Xin; Wang, Lin-Wang; Liu, Yi; Huang, Wei

2017-07-17

To suppress concentration quenching and to improve charge-carrier injection/transport in the emission layer (EML) of phosphorescent organic light-emitting diodes (PhOLEDs), a facial homoleptic iridium(III) complex emitter with amorphous characteristics was designed and prepared in one step from a multifunctional spiro ligand containing spiro[fluorene-9,9'-xanthene] (SFX) unit. Single-crystal X-ray analysis of the resulting fac-Ir(SFXpy) 3 complex revealed an enlarged Ir···Ir distance and negligible intermolecular π-π interactions between the spiro ligands. The emitter exhibits yellow emission and almost equal energy levels compared to the commercial phosphor iridium(III) bis(4-phenylthieno[3,2-c]pyridinato-N,C 2 ')acetylacetonate (PO-01). Dry-processed devices using a common host, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, and the fac-Ir(SFXpy) 3 emitter at a doping concentration of 15 wt % exhibited a peak performance of 46.2 cd A -1 , 36.3 lm W -1 , and 12.1% for the current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. Compared to control devices using PO-01 as the dopant, the fac-Ir(SFXpy) 3 -based devices remained superior in the doping range between 8 and 15 wt %. The current densities went up with increasing doping concentration at the same driving voltage, while the roll-offs remain relatively low even at high doping levels. The superior performance of the new emitter-based devices was ascribed to key roles of the spiro ligand for suppressing aggregation and assisting charge-carrier injection/transport. Benefiting from the amorphous stability of the emitter, the wet-processed device also exhibited respectful CE, PE, and EQE of 32.2 cd A -1 , 22.1 lm W -1 , and 11.3%, respectively, while the EQE roll-off was as low as 1.7% at the luminance of 1000 cd m -2 . The three-dimensional geometry and binary-conjugation features render SFX the ideal multifunctional module for suppressing concentration quenching, facilitating charge-carrier injection/transport, and improving the amorphous stability of iridium(III)-based phosphorescent emitters.

Knowledge, attitudes, beliefs, values, preferences, and feasibility in relation to the use of injection safety devices in healthcare settings: a systematic review.

PubMed

Tarabay, Rami; El Rassi, Rola; Dakik, Abeer; Harb, Alain; Ballout, Rami A; Diab, Batoul; Khamassi, Selma; Akl, Elie A

2016-07-13

Adopting technologies such as injection safety devices in healthcare settings can enhance injection safety. Developing guidelines for appropriate adoption of such technologies need to consider factors beyond evidence for their health effects. The objective of this study is to systematically review the published literature for evidence among healthcare workers and patients about knowledge, attitudes, beliefs, values, preferences, and feasibility in relation to the use of injection safety devices in healthcare settings. We included both qualitative and quantitative studies conducted with the general public, patients, and healthcare workers, administrators, or policy makers. We searched MEDLINE, EMBASE, CINHAL and CENTRAL. We used a duplicate and independent approach to title and abstract screening, full text screening, data abstraction and risk of bias assessment. Out of a total of 6568 identified citations, we judged fourteen studies as eligible for this systematic review. All these studies were surveys, conducted with healthcare workers in high-income countries. We did not identify any qualitative study, or a study of the general public, patients, healthcare administrators or policy makers. We did not identify any study assessing knowledge, or values assigned to outcomes relevant to injection safety devices. Each of the included studies suffered from methodological limitations, which lowers our confidence in their findings. Based on the findings of six studies, the injection safety devices were generally perceived as easy to use and as an improvement compared with conventional syringes. Some of these studies reported few technical problems while using the devices. In three studies assessing perceived safety, the majority of participants judged the devices as safe. Two studies reported positive perceptions of healthcare workers regarding patient tolerance of these injection safety devices. One study found that less than half the nurses felt comfortable using the insulin pens. Findings from four studies assessing preference and satisfaction were not consistent. This systematic review identified evidence that injection safety devices are generally perceived as easy to use, safe, and tolerated by patients. There were few reports of technical problems while using the devices and some discomfort by nurses using the insulin pens.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Nath, Digbijoy N.

We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.

Digital optical signal processing with polarization-bistable semiconductor lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jai-Ming Liu,; Ying-Chin Chen,

1985-04-01

The operations of a complete set of optical AND, NAND, OR, and NOR gates and clocked optical S-R, D, J-K, and T flip-flops are demonstrated, based on direct polarization switching and polarization bistability, which we have recently observed in InGaAsP/InP semiconductor lasers. By operating the laser in the direct-polarizationswitchable mode, the output of the laser can be directly switched between the TM00 and TE00 modes with high extinction ratios by changing the injection-current level, and optical logic gates are constructed with two optoelectronic switches or photodetectors. In the polarization-bistable mode, the laser exhibits controllable hysteresis loops in the polarization-resolved powermore » versus current characteristics. When the laser is biased in the middle of the hysteresis loop, the light output can be switched between the two polarization states by injection of short electrical or optical pulses, and clocked optical flip-flops are constructed with a few optoelectronic switches and/or photodetectors. The 1 and 0 states of these devices are defined through polarization changes of the laser and direct complement functions are obtainable from the TE and TM output signals from the same laser. Switching of the polarization-bistable lasers with fast-rising current pulses has an instrument-limited mode-switching time on the order of 1 ns. With fast optoelectronic switches and/or fast photodetectors, the overall switching speed of the logic gates and flip-flops is limited by the polarizationbistable laser to <1 ns. We have demonstrated the operations of these devices using optical signals generated by semiconductor lasers. The proposed schemes of our devices are compatible with monolithic integration based on current fabrication technology and are applicable to other types of bistable semiconductor lasers.« less

Injection device-related risk management toward safe administration of medications: experience in a university teaching hospital in The People's Republic of China.

PubMed

Zhu, Ling-Ling; Li, Wei; Song, Ping; Zhou, Quan

2014-01-01

The use of injection devices to administer intravenous or subcutaneous medications is common practice throughout a variety of health care settings. Studies suggest that one-half of all harmful medication errors originate during drug administration; of those errors, about two-thirds involve injectables. Therefore, injection device management is pivotal to safe administration of medications. In this article, the authors summarize the relevant experiences by retrospective analysis of injection device-related near misses and adverse events in the Second Affiliated Hospital of Zhejiang University, School of Medicine, Zhejiang University, People's Republic of China. Injection device-related near misses and adverse events comprised the following: 1) improper selection of needle diameter for subcutaneous injection, material of infusion sets, and pore size of in-line filter; 2) complications associated with vascular access; 3) incidents induced by absence of efficient electronic pump management and infusion tube management; and 4) liquid leakage of chemotherapeutic infusion around the syringe needle. Safe injection drug use was enhanced by multidisciplinary collaboration, especially among pharmacists and nurses; drafting of clinical pathways in selection of vascular access; application of approaches such as root cause analysis using a fishbone diagram; plan-do-check-act and quality control circle; and construction of a culture of spontaneous reporting of near misses and adverse events. Pharmacists must be professional in regards to medication management and use. The depth, breadth, and efficiency of cooperation between nurses and pharmacists are pivotal to injection safety.

An in vitro analysis of a carotid artery stent with a protective porous membrane.

PubMed

Müller-Hülsbeck, Stefan; Hüsler, Erhard J; Schaffner, Silvio R; Jahnke, Thomas; Glass, Christoph; Wenke, Rüdiger; Heller, Martin

2004-11-01

To prove the effectiveness of a new stent concept with integrated protection (MembraX [MX]) by comparing it with five cerebral protection devices designed for carotid angioplasty in an in vitro model. Two simulation series of embolization from carotid angioplasty have been performed. In the first series, polyvinyl-alcohol particles (150-250 microm [small], 355-500 microm [medium], 710-1000 microm [large]; 5 mg each) were injected into a silicone flow model simulating the aortic arch with a carotid bifurcation. The particles were injected proximally to the partially deployed MX stent or one of the following protection devices: Angioguard (AG), FilterWire EX (EX), Trap, Neuroshield (NS), or GuardWire Plus (GW). Particles evading the protection device were caught in a filter at the end of the flow model and weighed. In the second series, human plaque material (8-12 particles; total weight 6.09 +/- 0.01 mg; 500-1500 microm) was injected into the model with the respective devices. MX was compared with the AG, EX, Trap, and NS devices. MX had the most effective overall filtration performance for polyvinyl alcohol particles in the effluent of the internal carotid artery (ICA; 0.43 mg, 2.9%), compared with NS (0.53 mg, 3.5%), GW (1.10 mg, 7.0%), EX and AG (1.18 and 1.21 mg, respectively; 7.8% and 8.0%), and Trap (1.24 mg, 8.2%). MX performed best for the small particles (2.0% passed particles into ICA; P < .05 compared with all). Human plaque material was retained best in the in vitro model by MX (0.0%), followed by NS (0.8%), EX (1.3%), Trap (2.6%), and AG (4.4%). In vitro, none of the tested devices had the ability to prevent embolization completely. Comparing current designs, the MX device captured the highest percentage of the three different particle groups. Tested with human plaque emboli, MX performed effectively in filtering the particles in the ICA.

Demonstration of efficient spin injection and detection in various systems using Fe{sub 3}O{sub 4} based spin injectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhat, Shwetha G., E-mail: shwethabhat@physics.iisc.ernet.in; Anil Kumar, P. S.

2016-05-15

Half-metal based spin injector devices for spin injection and detection application have proven to be efficient owing to their enhanced injection and detection efficiency. In this study, we extend the all-electrical spin injection and detection studies into different systems like Si and GaAs using half-metal Fe{sub 3}O{sub 4} as a spin injector in the presence and absence of tunnel barrier MgO. Injection into GaAs is verified using conventional Fe/MgO/GaAs devices. Room temperature spin injection into both p-type and n-type Si is achieved and the spin injection could be observed down to 100 K. Obtained spin relaxation time for these n-typemore » and p-type Si at different temperatures agree well with the existing reports. Further, the temperature dependent spin injection and detection is also successfully achieved in Fe{sub 3}O{sub 4}/GaAs (n-type) Schottky devices, and a comparison study of the results with control experiment using Fe/MgO/GaAs (n-type) devices confirm the relaxation to be similar in the GaAs substrate, as expected. Hence, even Fe{sub 3}O{sub 4} material can be effectively used as an efficient spin injector as well as detector, making it an attractive candidate for the room temperature spintronics device applications.« less

Functionalized organic semiconductor molecules to enhance charge carrier injection in electroluminescent cell

NASA Astrophysics Data System (ADS)

Yalcin, Eyyup; Kara, Duygu Akin; Karakaya, Caner; Yigit, Mesude Zeliha; Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Demic, Serafettin; Kus, Mahmut; Aboulouard, Abdelkhalk

2017-07-01

Organic semiconductor (OSC) materials as a charge carrier interface play an important role to improve the device performance of organic electroluminescent cells. In this study, 4,4″-bis(diphenyl amino)-1,1':3‧,1″-terphenyl-5'-carboxylic acid (TPA) and 4,4″-di-9H-carbazol-9-yl-1,1':3‧,1″-terphenyl-5'-carboxylic acid (CAR) has been designed and synthesized to modify indium tin oxide (ITO) layer as interface. Bare ITO and PEDOT:PSS coated on ITO was used as reference anode electrodes for comparison. Furthermore, PEDOT:PSS coated over CAR/ITO and TPA/ITO to observe stability of OSC molecules and to completely cover the ITO surface. Electrical, optical and surface characterizations were performed for each device. Almost all modified devices showed around 36% decrease at the turn on voltage with respect to bare ITO. The current density of bare ITO, ITO/CAR and ITO/TPA were measured as 288, 1525 and 1869 A/m2, respectively. By increasing current density, luminance of modified devices showed much better performance with respect to unmodified devices.

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

PubMed

Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

2017-03-20

The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm². Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

Nano-fabricated perpendicular magnetic anisotropy electrodes for lateral spin valves and observation of Nernst-Ettingshausen related signals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chejanovsky, N.; Sharoni, A., E-mail: amos.sharoni@biu.ac.il

2014-08-21

Lateral spin valves (LSVs) are efficient structures for characterizing spin currents in spintronics devices. Most LSVs are based on ferromagnetic (FM) electrodes for spin-injection and detection. While there are advantages for using perpendicular magnetic anisotropy (PMA) FM, e.g., stability to nano-scaling, these have almost not been studied. This is mainly due to difficulties in fabricating PMA FMs in a lateral geometry. We present here an efficient method, based on ion-milling through an AlN mask, for fabrication of LSVs with multi-layered PMA FMs such as Co/Pd and Co/Ni. We demonstrate, using standard permalloy FMs, that the method enables efficient spin injection.more » We show the multi-layer electrodes retain their PMA properties as well as spin injection and detection in PMA LSVs. In addition, we find a large asymmetric voltage signal which increases with current. We attribute this to a Nernst-Ettingshausen effect caused by local Joule heating and the perpendicular magnetic easy axis.« less

Terahertz light-emitting graphene-channel transistor toward single-mode lasing

NASA Astrophysics Data System (ADS)

Yadav, Deepika; Tamamushi, Gen; Watanabe, Takayuki; Mitsushio, Junki; Tobah, Youssef; Sugawara, Kenta; Dubinov, Alexander A.; Satou, Akira; Ryzhii, Maxim; Ryzhii, Victor; Otsuji, Taiichi

2018-03-01

A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) was fabricated as a current-injection terahertz (THz) light-emitting laser transistor. We observed a broadband emission in a 1-7.6-THz range with a maximum radiation power of 10 μW as well as a single-mode emission at 5.2 THz with a radiation power of 0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

Evaluation of performance, acceptance, and compliance of an auto-injector in healthy and rheumatoid arthritic subjects measured by a motion capture system.

PubMed

Xiao, Xiao; Li, Wei; Clawson, Corbin; Karvani, David; Sondag, Perceval; Hahn, James K

2018-01-01

The study aimed to develop a motion capture system that can track, visualize, and analyze the entire performance of self-injection with the auto-injector. Each of nine healthy subjects and 29 rheumatoid arthritic (RA) patients with different degrees of hand disability performed two simulated injections into an injection pad while six degrees of freedom (DOF) motions of the auto-injector and the injection pad were captured. We quantitatively measured the performance of the injection by calculating needle displacement from the motion trajectories. The max, mean, and SD of needle displacement were analyzed. Assessments of device acceptance and usability were evaluated by a survey questionnaire and independent observations of compliance with the device instruction for use (IFU). A total of 80 simulated injections were performed. Our results showed a similar level of performance among all the subjects with slightly larger, but not statistically significant, needle displacement in the RA group. In particular, no significant effects regarding previous experience in self-injection, grip method, pain in hand, and Cochin score in the RA group were found to have an impact on the mean needle displacement. Moreover, the analysis of needle displacement for different durations of injections indicated that most of the subjects reached their personal maximum displacement in 15 seconds and remained steady or exhibited a small amount of increase from 15 to 60 seconds. Device acceptance was high for most of the questions (ie, >4; >80%) based on a 0-5-point scale or percentage of acceptance. The overall compliance with the device IFU was high for the first injection (96.05%) and reached 98.02% for the second injection. We demonstrated the feasibility of tracking the motions of injection to measure the performance of simulated self-injection. The comparisons of needle displacement showed that even RA patients with severe hand disability could properly perform self-injection with this auto-injector at a similar level with the healthy subjects. Finally, the observed high device acceptance and compliance with device IFU suggest that the system is convenient and easy to use.

Improvements in ion reflux: An electrodialytic eluent generation and suppression device for ion chromatography.

PubMed

Elkin, Kyle; Riviello, John; Small, Hamish

2015-07-17

This work describes a membrane based electrodialytic ion reflux device (IRD), which uses water as the pumped phase and integrates isocratic and gradient eluent generation and suppression. The current design incorporates several ion exchange membranes to create discrete chambers for suppression and eluent generation, while isolating the electrodes from the analytical stream. A small volume of recycled water can be used as the pumped phase while continuously refluxing the eluent ions. This current design permits electronically controlled eluent generation of at least 16.4μeq KOHmin(-1), while maintaining low suppressed background conductivity (<0.5μS/cm). The device was operated in gradient or isocratic mode continuously for up to 6 weeks. During this period, over 500 gradient and isocratic injections were performed, showing peak retention time precision below 1.5% RSD. Published by Elsevier B.V.

Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed

The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRFmore » cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.« less

Precision vector control of a superconducting RF cavity driven by an injection locked magnetron

DOE PAGES

Chase, Brian; Pasquinelli, Ralph; Cullerton, Ed; ...

2015-03-01

The technique presented in this paper enables the regulation of both radio frequency amplitude and phase in narrow band devices such as a Superconducting RF (SRF) cavity driven by constant power output devices i.e. magnetrons [1]. The ability to use low cost high efficiency magnetrons for accelerator RF power systems, with tight vector regulation, presents a substantial cost savings in both construction and operating costs - compared to current RF power system technology. An operating CW system at 2.45 GHz has been experimentally developed. Vector control of an injection locked magnetron has been extensively tested and characterized with a SRFmore » cavity as the load. Amplitude dynamic range of 30 dB, amplitude stability of 0.3% r.m.s, and phase stability of 0.26 degrees r.m.s. has been demonstrated.« less

The Physics of Tokamak Start-up

DOE Office of Scientific and Technical Information (OSTI.GOV)

D. Mueller

Tokamak start-up on present-day devices usually relies on inductively induced voltage from a central solenoid. In some cases inductive startup is assisted with auxiliary power from electron cyclotron radio frequency heating. ITER, the National Spherical Torus eXperiment Upgrade and JT60, now under construction, will make use of the understanding gained from present-day devices to ensure successful start-up. Design of a spherical tokamak (ST) with DT capability for nuclear component testing would require an alternative to a central solenoid because the small central column in an ST has insufficient space to provide shielding for the insulators in the solenoid. Alternative start-upmore » techniques such as induction using outer poloidal field coils, electron Bernstein wave start-up, coaxial helicity injection and point source helicity injection have been used with success, but require demonstration of scaling to higher plasma current.« less

The physics of tokamak start-up

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mueller, D.

Tokamak start-up on present-day devices usually relies on inductively induced voltage from a central solenoid. In some cases, inductive startup is assisted with auxiliary power from electron cyclotron radio frequency heating. International Thermonuclear Experimental Reactor, the National Spherical Torus Experiment Upgrade and JT60, now under construction, will make use of the understanding gained from present-day devices to ensure successful start-up. Design of a spherical tokamak (ST) with DT capability for nuclear component testing would require an alternative to a central solenoid because the small central column in an ST has insufficient space to provide shielding for the insulators in themore » solenoid. Alternative start-up techniques such as induction using outer poloidal field coils, electron Bernstein wave start-up, coaxial helicity injection, and point source helicity injection have been used with success, but require demonstration of scaling to higher plasma current.« less

Optical-microwave interactions in semiconductor devices

NASA Astrophysics Data System (ADS)

Figueroa, L.; Slayman, C. W.; Yen, H. W.

1981-03-01

The results of an extensive characterization of microwave-optical devices is presented. The study has concentrated in the optical injection locking of IMPATT oscillators, high-speed analog modulation of (GaAl)As injection laser, mode-locking of (GaAl)As injection laser, and high-speed optical detectors.

Feedback effects in optical communication systems: characteristic curve for single-mode InGaAsP lasers.

PubMed

Brivio, F; Reverdito, C; Sacchi, G; Chiaretti, G; Milani, M

1992-08-20

An experimental analysis of InGaAsP injection lasers shows an unexpected decrease of the differential quantum efficiency as a function of injected current when optical power is fed back into the active cavity of a diode inserted into a long transmission line. To investigate the response of laser diodes to optical feedback, we base our analysis on a microscopic model, resulting in a set of coupled equations that include the microscopic parameters that characterize the material and the device. This description takes into account the nonlinear dependence of the interband carrier lifetime on the level of optical feedback. Good agreement between the analytical description and experimental data is obtained for threshold current and differential quantum efficiency as functions of the feedback ratio.

Children and adolescent acceptability of a new device system to administer human growth hormone--a pilot study.

PubMed

Kappelgaard, Anne-Marie; Mikkelsen, Søren; Bagger, Claus; Fuchs, Gitte Schøning

2012-01-01

Growth hormone (GH) is used to treat growth failure in children and metabolic impairments in adults with GH deficiency (GHD). Treatment requires daily subcutaneous injections that may affect treatment outcomes, and subsequently efficacy outcomes. To enhance potential adherence, improved GH delivery device systems are being developed. To compare patient acceptability and usability of Norditropin FlexPro/FlexPro PenMate with Norditropin NordiFlex/NordiFlex PenMate for GH administration in children/adolescents with GHD. A multinational, open-label, uncontrolled study. Patients (n = 50; 4-18 years) currently on GH therapy injected test medium into a foam pad. Ease-of-use and patient device preference were recorded by questionnaire. The majority (80%) of patients preferred FlexPro PenMate over NordiFlex PenMate with 96% and 84%, respectively, reporting that they found the FlexPro PenMate system user-friendly and that they were highly confident using it. The FlexPro system was well accepted by patients. This may facilitate greater adherence to treatment and improve patient outcomes.

Strategies to improve electrode positioning and safety in cochlear implants.

PubMed

Rebscher, S J; Heilmann, M; Bruszewski, W; Talbot, N H; Snyder, R L; Merzenich, M M

1999-03-01

An injection-molded internal supporting rib has been produced to control the flexibility of silicone rubber encapsulated electrodes designed to electrically stimulate the auditory nerve in human subjects with severe to profound hearing loss. The rib molding dies, and molds for silicone rubber encapsulation of the electrode, were designed and machined using AutoCad and MasterCam software packages in a PC environment. After molding, the prototype plastic ribs were iteratively modified based on observations of the performance of the rib/silicone composite insert in a clear plastic model of the human scala tympani cavity. The rib-based electrodes were reliably inserted farther into these models, required less insertion force and were positioned closer to the target auditory neural elements than currently available cochlear implant electrodes. With further design improvements the injection-molded rib may also function to accurately support metal stimulating contacts and wire leads during assembly to significantly increase the manufacturing efficiency of these devices. This method to reliably control the mechanical properties of miniature implantable devices with multiple electrical leads may be valuable in other areas of biomedical device design.

Overview of HIT-SI Results and Plans

NASA Astrophysics Data System (ADS)

Ennis, D. A.; Akcay, C.; Hansen, C. J.; Hicks, N. K.; Hossack, A. C.; Jarboe, T. R.; Marklin, G. J.; Nelson, B. A.; Victor, B. S.

2011-10-01

Experiments in the Helicity Injected Torus-Steady Inductive (HIT-SI) device have achieved record spheromak current amplification during operations in deuterium plasmas. HIT-SI investigates steady inductive helicity injection with the aim of forming and sustaining a high-beta equilibrium in a spheromak geometry using two semi-toroidal injectors. Recent operations in deuterium plasmas have produced toroidal plasma currents greater than 50 kA, with current amplifications (Itor / Iinj) > 3 , and poloidal flux amplifications (ψpol /ψinj) > 10 . High performance deuterium discharges are achieved by initially conditioning the plasma-facing alumina surface of the HIT-SI confinement volume with helium plasmas. During subsequent deuterium operation the alumina surface strongly pumps deuterium, thereby limiting the density in the confinement volume. Additional measurements during high current deuterium discharges demonstrate reduced current and electron density fluctuations, impurity O III ion temperatures up to 50 eV and a toroidal current persistence for 0.6 ms after the injectors are shut off. Progress and plans for the HIT-SI3 configuration, with three injectors mounted on the same side of the confinement volume, will also be presented. Work supported by USDoE and ARRA.

An open-label, multicenter study to evaluate the safe and effective use of the single-use autoinjector with an Avonex® prefilled syringe in multiple sclerosis subjects

PubMed Central

2011-01-01

Background The ability to self-inject in patients with multiple sclerosis (MS) has been associated with a reduced risk of missed injections and drug discontinuation, and a beneficial effect on patients' independence. However, injection anxiety, needle phobia and disease-related disability are major barriers to a patient's ability to self-administer treatment. Use of an autoinjector may improve patients' ability to self-inject. This study evaluated the safe and effective use of Avonex Pen™ (prefilled pen), a single use autoinjector, for intramuscular delivery of interferon beta-1a (IM IFNβ-1a, Avonex) in MS patients. Methods This was a Phase IIIb, open-label, single-country, multicenter trial in MS patients currently using IM IFNβ-1a prefilled syringes. Patients received weekly 30 mcg IM IFNβ-1a treatment over 4 weeks. On Day 1, patients self-administered IM IFNβ-1a using a prefilled syringe at the clinic. On Day 8, patients received training on the prefilled pen and self-administered IM IFNβ-1a using the device. On Day 15, patients self-administered IM IFNβ-1a at home using the prefilled pen. A final injection occurred at the clinic on Day 22 when patients self-administered IM IFNβ-1a using the prefilled pen while clinic staff observed and completed a detailed questionnaire documenting patients' ability to self-inject with the device. Serum neopterin levels were evaluated pre and post-injection on Days 1 and 8. Adverse events were monitored throughout. Results Seventy-one (96%) patients completed the study. The overall success rate in safely and effectively using the prefilled pen was 89%. No device malfunctions occurred. One unsuccessful administration occurred at Day 22 due to patient error; no patient injury resulted. Patients gave the prefilled pen high ratings (8.7-9.3) on a 10-point scale for ease of use (0 = extremely difficult, 10 = extremely easy). Ninety-four percent of patients preferred the prefilled pen over the prefilled syringe. Induction of serum neopterin levels, serving as a biomarker for type 1 interferon action, was similar to that of the prefilled syringe. The prefilled pen demonstrated a safety profile comparable to the prefilled syringe. Conclusions The prefilled pen is a safe and effective device for administration of IM IFNβ-1a and represents an alternative method for self-injection for MS patients using this therapy. Trial registration This study is registered at clinicaltrials.gov, identifier: NCT00828204 PMID:21999176

Charge transfer through amino groups-small molecules interface improving the performance of electroluminescent devices

NASA Astrophysics Data System (ADS)

Havare, Ali Kemal; Can, Mustafa; Tozlu, Cem; Kus, Mahmut; Okur, Salih; Demic, Şerafettin; Demirak, Kadir; Kurt, Mustafa; Icli, Sıddık

2016-05-01

A carboxylic group functioned charge transporting was synthesized and self-assembled on an indium tin oxide (ITO) anode. A typical electroluminescent device [modified ITO/TPD (50 nm)/Alq3 (60 nm)/LiF (2 nm)/(120 nm)] was fabricated to investigate the effect of the amino groups-small molecules interface on the characteristics of the device. The increase in the surface work function of ITO is expected to facilitate the hole injection from the ITO anode to the Hole Transport Layer (HTL) in electroluminescence. The modified electroluminescent device could endure a higher current and showed a much higher luminance than the nonmodified one. For the produced electroluminescent devices, the I-V characteristics, optical characterization and quantum yields were performed. The external quantum efficiency of the modified electroluminescent device is improved as the result of the presence of the amino groups-small molecules interface.

21 CFR 878.4520 - Polytetrafluoroethylene injectable.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Polytetrafluoroethylene injectable. 878.4520 Section 878.4520 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES GENERAL AND PLASTIC SURGERY DEVICES Surgical Devices § 878.4520...

21 CFR 878.4520 - Polytetrafluoroethylene injectable.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 21 Food and Drugs 8 2012-04-01 2012-04-01 false Polytetrafluoroethylene injectable. 878.4520 Section 878.4520 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES GENERAL AND PLASTIC SURGERY DEVICES Surgical Devices § 878.4520...

21 CFR 878.4520 - Polytetrafluoroethylene injectable.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 21 Food and Drugs 8 2013-04-01 2013-04-01 false Polytetrafluoroethylene injectable. 878.4520 Section 878.4520 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES GENERAL AND PLASTIC SURGERY DEVICES Surgical Devices § 878.4520...

21 CFR 878.4520 - Polytetrafluoroethylene injectable.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Polytetrafluoroethylene injectable. 878.4520 Section 878.4520 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES GENERAL AND PLASTIC SURGERY DEVICES Surgical Devices § 878.4520...

21 CFR 878.4520 - Polytetrafluoroethylene injectable.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Polytetrafluoroethylene injectable. 878.4520 Section 878.4520 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED) MEDICAL DEVICES GENERAL AND PLASTIC SURGERY DEVICES Surgical Devices § 878.4520...

Applications of Gunn lasers

NASA Astrophysics Data System (ADS)

Balkan, N.; Chung, S. H.

2008-04-01

The principle of the operation of a Gunn laser is based on the band to band recombination of impact ionized non-equilibrium electron-hole pairs in propagating high field space-charge domains in a Gunn diode, which is biased above the negative differential resistance threshold and placed in a Fabry-Perot or a vertical micro cavity (VCSEL). In conventional VCSEL structures, unless specific measures such as the addition of oxide apertures and use of small windows are employed, the lack of uniformity in the density of current injected into the active region can reduce the efficiency and delay the lasing threshold. In a vertical-cavity structured Gunn device, however, the current is uniformly injected into the active region independently of the distributed Bragg reflector (DBR) layers. Therefore, lasing occurs from the entire surface of the device. The light emission from Gunn domains is an electric field induced effect. Therefore, the operation of Gunn-VCSEL or F-P laser is independent of the polarity of the applied voltage. Red-NIR VCSELs emitting in the range of 630-850 nm are also possible when Ga 1-xAl xAs (x < 0.45) is used the active layer, making them candidates for light sources in plastic optical fibre (POF) based short-distance data communications. Furthermore the device may find applications as an optical clock and cross link between microwave and NIR communications. The operation of a both Gunn-Fabry-Perot laser and Gunn-VCSEL has been demonstrated by us recently. In the current work we present the potential results of experimental and theoretical studies concerning the applications together with the gain and emission characteristics of Gunn-Lasers.

Droop-free Al_xGa_1-xN/Al_yGa_1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates.

PubMed

Janjua, Bilal; Sun, Haiding; Zhao, Chao; Anjum, Dalaver H; Priante, Davide; Alhamoud, Abdullah A; Wu, Feng; Li, Xiaohang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; El-Desouki, Munir M; Ng, Tien Khee; Ooi, Boon S

2017-01-23

Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm² (80 mA in 0.5 × 0.5 mm² device), a turn-on voltage of ~5.5 V and droop-free behavior up to 120 A/cm² of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.

Refrigeration system with a compressor-pump unit and a liquid-injection desuperheating line

DOEpatents

Gaul, Christopher J.

2001-01-01

The refrigeration system includes a compressor-pump unit and/or a liquid-injection assembly. The refrigeration system is a vapor-compression refrigeration system that includes an expansion device, an evaporator, a compressor, a condenser, and a liquid pump between the condenser and the expansion device. The liquid pump improves efficiency of the refrigeration system by increasing the pressure of, thus subcooling, the liquid refrigerant delivered from the condenser to the expansion device. The liquid pump and the compressor are driven by a single driving device and, in this regard, are coupled to a single shaft of a driving device, such as a belt-drive, an engine, or an electric motor. While the driving device may be separately contained, in a preferred embodiment, the liquid pump, the compressor, and the driving device (i.e., an electric motor) are contained within a single sealable housing having pump and driving device cooling paths to subcool liquid refrigerant discharged from the liquid pump and to control the operating temperature of the driving device. In another aspect of the present invention, a liquid injection assembly is included in a refrigeration system to divert liquid refrigerant from the discharge of a liquid pressure amplification pump to a compressor discharge pathway within a compressor housing to desuperheat refrigerant vapor to the saturation point within the compressor housing. The liquid injection assembly includes a liquid injection pipe with a control valve to meter the volume of diverted liquid refrigerant. The liquid injection assembly may also include a feedback controller with a microprocessor responsive to a pressure sensor and a temperature sensor both positioned between the compressor to operate the control valve to maintain the refrigerant at or near saturation.

Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves

NASA Astrophysics Data System (ADS)

Anugrah, Yoska; Hu, Jiaxi; Stecklein, Gordon; Crowell, Paul A.; Koester, Steven J.

2018-01-01

Graphene is an ideal material for spintronic devices due to its low spin-orbit coupling and high mobility. One of the most important potential applications of graphene spintronics is for use in neuromorphic computing systems, where the tunable spin resistance of graphene can be used to apply analog weighting factors. A key capability needed to achieve spin-based neuromorphic computing systems is to achieve distinct regions of control, where injected and detected spin currents can be tuned independently. Here, we demonstrate the ability to achieve such independent control using a graphene spin valve geometry where the injector and detector regions are modulated by two separate bottom gate electrodes. The spin transport parameters and their dependence on each gate voltage are extracted from Hanle precession measurements. From this analysis, local spin transport parameters and their dependence on the local gate voltage are found, which provide a basis for a spatially-resolved spin resistance network that simulates the device. The data and model are used to calculate the spin currents flowing into, through, and out of the graphene channel. We show that the spin current flowing through the graphene channel can be modulated by 30% using one gate and that the spin current absorbed by the detector can be modulated by 50% using the other gate. This result demonstrates that spin currents can be controlled by locally tuning the spin resistance of graphene. The integration of chemical vapor deposition (CVD) grown graphene with local gates allows for the implementation of large-scale integrated spin-based circuits.

Solution-Processable Transparent Conductive Hole Injection Electrode for OLED SSL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pschenitzka, Florian; Mathai, Mathew; Torke, Terri

2012-07-15

An interconnected network of silver nanowires has been used as transparent anode in OLED devices. This layer was deposited by spin-coating and slot-die coating from an aqueous nanowire suspension. The sheet resistance of the film was 10ohms/sq with a transmission (including the glass substrate) of higher than 85%. The first phase of the project focused on the implementation of this nanowire layer with a hole-injection-layer (HIL) which has been developed at Plextronics and has been shown to provide good stability and efficiency in conventional OLED devices. We modified the HIL solution such that it coated reasonably well with suitable surfacemore » morphology so that actual devices can be manufactured. During the second phase we investigated the hole-injection and stability of hole-onlydevices. We determined that the use of the nanowire network as anode does not introduce an additional degradation mechanism since the observed device characteristics did not differ from those made with ITO anode. We then proceeded to make actual OLED devices with this nanowire / HIL stack and achieved device characteristics similar state-of-the-art OLED devices with a single junction. In order to gain traction with potential OLED manufacturers, we decided to contract Novaled to prepare large-area demonstrators for us. For these devices, we used an allevaporated stack, i.e. we did use Novaled's HIL material instead of Plextronics. We successfully fabricated demonstrators with an area of 25cm2 with a double or triple junction stack. Minor stack optimizations were necessary to achieve efficacies and lifetime equivalent with ITO devices made with the same devices stack. Due to the reduced microcavity effect, the color of the emitted light is significantly more stable with respect to the viewing angle compared to ITO devices. This fact in conjunction with the promise of lower production cost due to the elimination of the ITO sputtering process and the direct patterning of the anode layer are the obvious advantages of this technology. The project has shown that this nanowire technology is a viable option to achieve OLED devices with good lifetime and efficiency and we are currently working with manufacturers to utilize this technology in a production setting.« less

Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors

NASA Astrophysics Data System (ADS)

Momox, Ernesto; Zakhleniuk, Nick; Balkan, Naci

2012-11-01

A detailed study of high-field transient and direct-current (DC) transport in GaN-based Gunn diode oscillators is carried out using the commercial simulator Sentaurus Device. Applicability of drift-diffusion (DD) and hydrodynamic (HD) models to high-speed, high-frequency devices is discussed in depth, and the results of the simulations from these models are compared. It is shown, for a highly homogeneous device based on a short (2 μm) supercritically doped (1017 cm-3) GaN specimen, that the DD model is unable to correctly take into account some essential physical effects which determine the operation mode of the device. At the same time, the HD model is ideally suited to solve such problems due to its ability to incorporate non-local effects. We show that the velocity overshoot near the device contacts and space charge injection and extraction play a crucial role in defining the operation mode of highly homogeneous short diodes in both the transient regime and the voltage-controlled oscillation regime. The transient conduction current responses are fundamentally different in the DD and HD models. The DD current simply repeats the velocity-field (v-F) characteristics, and the sample remains in a completely homogeneous state. In the HD model, the transient current pulse with a full width at half maximum of approximately 0.2 ps is increased about twofold due to the carrier injection (extraction) into (from) the active region and the velocity overshoot. The electron gas is characterized by highly inhomogeneous distributions of the carrier density, the electric field and the electron temperature. The simulation of the DC steady states of the diodes also shows very different results for the two models. The HD model shows the trapped stable anodic domain in the device, while the DD model completely retains all features of the v-F characteristics in a homogeneous gas. Simulation of the voltage-controlled oscillator shows that it operates in the accumulation layer mode generating microwave signals at 0.3 to 0.7 THz. In spite of the fact that the known criterion of a Gunn domain mode n 0 L > ( n 0 L)0 was satisfied, no Gunn domains were observed. The explanation of this phenomenon is given.

Safe and Effective Use of the Once Weekly Dulaglutide Single-Dose Pen in Injection-Naïve Patients With Type 2 Diabetes.

PubMed

Matfin, Glenn; Van Brunt, Kate; Zimmermann, Alan G; Threlkeld, Rebecca; Ignaut, Debra A

2015-04-21

This 4-week, phase 3b, multicenter, open-label, single-arm, outpatient study demonstrated the safe and effective use of the dulaglutide single-dose pen containing 0.5 mL of placebo for subcutaneous injection in injection-naïve adult patients with type 2 diabetes (T2D), with A1C ≤ 8.5% (69 mmol/mol), BMI ≥ 23 kg/m2 and ≤ 45 kg/m(2). Patients completed a modified self-injecting subscale of the Diabetes Fear of Injecting and Self-Testing Questionnaire (mD-FISQ) and were trained to self-inject with the single-dose pen. Patients completed the initial self-injection at the site, injected at home for 2 subsequent weeks, and returned to the site for the final injection. The initial and final self-injections were evaluated for success; the final (initial) self-injection success rate was the primary (secondary) outcome measure, and the primary (secondary) objective was to demonstrate this success rate as being significantly greater than 80%. Patients recorded their level of pain after each injection. After the final injection, patients completed the mD-FISQ and the Medication Delivery Device Assessment Battery (MDDAB) to assess their perceptions of the single-dose pen, including ease of use and experience with the device. Among 211 patients (mean age: 61 years), the primary objective was met, with a final injection success rate of 99.1% (95% CI: 96.6% to 99.7%). Among 214 patients, the initial injection success rate was 97.2% (95% CI: 94.0% to 98.7%), meeting the key secondary objective. Overall, most patients (>96%) found the device easy to use, were satisfied with the device, and would be willing to continue to use the single-dose pen after the study. There was a significant reduction (P < .001) from baseline to study end in patients' fear of self-injecting, as measured by the mD-FISQ. The dulaglutide single-dose pen was found to be a safe and effective device for use by patients with T2D who were injection-naïve. A positive injection experience is an important factor for patients and providers when initiating injectable therapy. © 2015 Diabetes Technology Society.

Safe and Effective Use of the Once Weekly Dulaglutide Single-Dose Pen in Injection-Naïve Patients With Type 2 Diabetes

PubMed Central

Matfin, Glenn; Van Brunt, Kate; Zimmermann, Alan G.; Threlkeld, Rebecca; Ignaut, Debra A.

2015-01-01

Background: This 4-week, phase 3b, multicenter, open-label, single-arm, outpatient study demonstrated the safe and effective use of the dulaglutide single-dose pen containing 0.5 mL of placebo for subcutaneous injection in injection-naïve adult patients with type 2 diabetes (T2D), with A1C ≤ 8.5% (69 mmol/mol), BMI ≥ 23 kg/m2 and ≤ 45 kg/m2. Method: Patients completed a modified self-injecting subscale of the Diabetes Fear of Injecting and Self-Testing Questionnaire (mD-FISQ) and were trained to self-inject with the single-dose pen. Patients completed the initial self-injection at the site, injected at home for 2 subsequent weeks, and returned to the site for the final injection. The initial and final self-injections were evaluated for success; the final (initial) self-injection success rate was the primary (secondary) outcome measure, and the primary (secondary) objective was to demonstrate this success rate as being significantly greater than 80%. Patients recorded their level of pain after each injection. After the final injection, patients completed the mD-FISQ and the Medication Delivery Device Assessment Battery (MDDAB) to assess their perceptions of the single-dose pen, including ease of use and experience with the device. Results: Among 211 patients (mean age: 61 years), the primary objective was met, with a final injection success rate of 99.1% (95% CI: 96.6% to 99.7%). Among 214 patients, the initial injection success rate was 97.2% (95% CI: 94.0% to 98.7%), meeting the key secondary objective. Overall, most patients (>96%) found the device easy to use, were satisfied with the device, and would be willing to continue to use the single-dose pen after the study. There was a significant reduction (P < .001) from baseline to study end in patients’ fear of self-injecting, as measured by the mD-FISQ. Conclusions: The dulaglutide single-dose pen was found to be a safe and effective device for use by patients with T2D who were injection-naïve. A positive injection experience is an important factor for patients and providers when initiating injectable therapy. PMID:25901022

New VCSEL technology with scalability for single mode operation and densely integrated arrays

NASA Astrophysics Data System (ADS)

Zhao, Guowei; Demir, Abdullah; Freisem, Sabine; Zhang, Yu; Liu, Xiaohang; Deppe, Dennis G.

2011-06-01

Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm. The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of 142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D arrays and low power sensors.

Non-equilibrium Green's functions method: Non-trivial and disordered leads

NASA Astrophysics Data System (ADS)

He, Yu; Wang, Yu; Klimeck, Gerhard; Kubis, Tillmann

2014-11-01

The non-equilibrium Green's function algorithm requires contact self-energies to model charge injection and extraction. All existing approaches assume infinitely periodic leads attached to a possibly quite complex device. This contradicts today's realistic devices in which contacts are spatially inhomogeneous, chemically disordered, and impacting the overall device characteristics. This work extends the complex absorbing potentials method for arbitrary, ideal, or non-ideal leads in atomistic tight binding representation. The algorithm is demonstrated on a Si nanowire with periodic leads, a graphene nanoribbon with trumpet shape leads, and devices with leads of randomly alloyed Si0.5Ge0.5. It is found that alloy randomness in the leads can reduce the predicted ON-state current of Si0.5Ge0.5 transistors by 45% compared to conventional lead methods.

Long acting injectable hormonal contraceptives.

PubMed

Fraser, I S

1982-03-01

Injectable hormonal preparations can be highly effective and satisfactory contraceptives. The two main preparations available today are depot medroxy progesterone acetate (DMPA) and norethisterone oenanthate (NET-OEN), but several other approaches are currently under clinical trial. Injectable contraceptives have some unique advantages which give them justifiably wide appeal amongst many groups of women. However, they do have a number of disadvantages including invariable menstrual disturbance and a delay in the return of fertility. One formulation of DMPA, Depo-Provera, is probably the most extensively investigated single hormonal contraceptive ever made. These studies indicate that it is remarkably safe and does not face any more unresolved issues than the combined pill, intrauterine device or tubal sterilization. However, for a number of disparate emotional and political reasons it has attracted the attention of several consumer and feminist groups, who have waged a prolonged and quite unjustified campaign against it. It is to be hoped that future debate will be conducted on a more informed, rational and less emotional basis. Injectable contraceptives should have an important place in the family planning armamentarium of all countries, and current developments should lead to a decrease in concerns about presently available agents. This should further increase the widespread acceptability of this approach to contraception.

Gate field plate IGBT with trench accumulation layer for extreme injection enhancement

NASA Astrophysics Data System (ADS)

Xu, Xiaorui; Chen, Wanjun; Liu, Chao; Chen, Nan; Tao, Hong; Shi, Yijun; Ma, Yinchang; Zhou, Qi; Zhang, Bo

2017-04-01

A gate field plate IGBT (GFP-IGBT) with extreme injection enhancement is proposed and verified using TCAD simulations. The GFP-IGBT features a gate field plate (GFP) inserted into n-drift region directly and a tiny P-base region separated from the GFP. In the ON-state, the accumulation layer is formed near to not only the bottom but also the side of the trench, which enhances electron injection efficiency. And the tiny P-base region reduces the holes extracted by reverse-biased P-base/N-drift junction. Both the GFP and tiny P-base contribute to achieving extreme injection enhancement, leading to a low forward voltage drop. In the OFF-state, due to the low stored charges in N-buffer layer, GFP-IGBT shows a short current fall time, leading to a decrease of turn-off loss. The simulation results show that, compared with the conventional IGBT, the GFP-IGBT offers a forward voltage drop reduction of 25% or current fall time reduction of 89% (i.e. turn-off loss reduction of 53%), resulting in low power loss. The excellent device performance, coupled with a commercial IGBT-compatible fabrication process, makes the proposed GFP-IGBT a promising candidate for power switching applications.

Improved hydrostatic pressure sample injection by tilting the microchip towards the disposable miniaturized CE device.

PubMed

Wang, Wei; Zhou, Fang; Zhao, Liang; Zhang, Jian-Rong; Zhu, Jun-Jie

2008-02-01

A simple method of hydrostatic pressure sample injection towards a disposable microchip CE device was developed. The liquid level in the sample reservoir was higher than that in the sample waste reservoir (SWR) by tilting microchip and hydrostatic pressure was generated, the sample was driven to pass through injection channel into SWR. After sample loading, the microchip was levelled for separation under applied high separation voltage. Effects of tilted angle, initial liquid height and injection duration on electrophoresis were investigated. With enough injection duration, the injection result was little affected by tilted angle and initial liquid heights in the reservoirs. Injection duration for obtaining a stable sample plug was mainly dependent on the tilted angle rather than the initial height of liquid. Experimental results were consistent with theoretical prediction. Fluorescence observation and electrochemical detection of dopamine and catechol were employed to verify the feasibility of tilted microchip hydrostatic pressure injection. Good reproducibility of this injection method was obtained. Because the instrumentation was simplified and no additional hardware was needed in this technology, the proposed method would be potentially useful in disposable devices.

Spin-polarized current injection induced magnetic reconstruction at oxide interface

DOE PAGES

Fang, F.; Yin, Y. W.; Li, Qi; ...

2017-01-04

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO 3/La 0.5Ca 0.5MnO 3/La 0.7Sr 0.3MnO 3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition ofmore » the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. As a result, the effect is robust and may serve as a viable route for electronic and spintronic applications.« less

Integrated optoelectronic oscillator.

PubMed

Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

2018-04-30

With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

Spin-polarized current injection induced magnetic reconstruction at oxide interface

NASA Astrophysics Data System (ADS)

Fang, F.; Yin, Y. W.; Li, Qi; Lüpke, G.

2017-01-01

Electrical manipulation of magnetism presents a promising way towards using the spin degree of freedom in very fast, low-power electronic devices. Though there has been tremendous progress in electrical control of magnetic properties using ferromagnetic (FM) nanostructures, an opportunity of manipulating antiferromagnetic (AFM) states should offer another route for creating a broad range of new enabling technologies. Here we selectively probe the interface magnetization of SrTiO3/La0.5Ca0.5MnO3/La0.7Sr0.3MnO3 heterojunctions and discover a new spin-polarized current injection induced interface magnetoelectric (ME) effect. The accumulation of majority spins at the interface causes a sudden, reversible transition of the spin alignment of interfacial Mn ions from AFM to FM exchange-coupled, while the injection of minority electron spins alters the interface magnetization from C-type to A-type AFM state. In contrast, the bulk magnetization remains unchanged. We attribute the current-induced interface ME effect to modulations of the strong double-exchange interaction between conducting electron spins and local magnetic moments. The effect is robust and may serve as a viable route for electronic and spintronic applications.

Needle-free jet injector intradermal delivery of fractional dose inactivated poliovirus vaccine: Association between injection quality and immunogenicity.

PubMed

Resik, Sonia; Tejeda, Alina; Mach, Ondrej; Sein, Carolyn; Molodecky, Natalie; Jarrahian, Courtney; Saganic, Laura; Zehrung, Darin; Fonseca, Magile; Diaz, Manuel; Alemany, Nilda; Garcia, Gloria; Hung, Lai Heng; Martinez, Yenisleydis; Sutter, Roland W

2015-10-26

The World Health Organization recommends that as part of the polio end-game strategy a dose of inactivated poliovirus vaccine (IPV) be introduced by the end of 2015 in all countries currently using only oral poliovirus vaccine (OPV). Administration of fractional dose (1/5 of full dose) IPV (fIPV) by intradermal (ID) injection may reduce costs, but its conventional administration is with Bacillus Calmette-Guerin (BCG) needle and syringe (NS), which is time consuming and technically challenging. We compared injection quality achieved with BCG NS and three needle-free jet injectors and assessed ergonomic features of the injectors. Children between 12 and 20 months of age who had previously received OPV were enrolled in the Camaguey, Cuba study. Subjects received a single fIPV dose administered intradermally with BCG NS or one of three needle-free injector devices: Bioject Biojector 2000® (B2000), Bioject ID Pen® (ID Pen), or PharmaJet Tropis® (Tropis). We measured bleb diameter and vaccine loss as indicators of ID injection quality, with desirable injection quality defined as bleb diameter ≥5mm and vaccine loss <10%. We surveyed vaccinators to evaluate ergonomic features of the injectors. We further assessed the injection quality indicators as predictors of immune response, measured by increase in poliovirus neutralizing antibodies in blood between day 0 (pre-IPV) and 21 (post-vaccination). Delivery by BCG NS and Tropis resulted in the highest proportion of subjects with desirable injection quality; health workers ranked Biojector2000 and Tropis highest for ergonomic features. We observed that vaccine loss and desirable injection quality were associated with an immune response for poliovirus type 2 (P=0.02, P=0.01, respectively). Our study demonstrated the feasibility of fIPV delivery using needle-free injector devices with high acceptability among health workers. We did not observe the indicators of injection quality to be uniformly associated with immune response. Copyright © 2015. Published by Elsevier Ltd.

A Resonant Pulse Detonation Actuator for High-Speed Boundary Layer Separation Control

NASA Technical Reports Server (NTRS)

Beck, B. T.; Cutler, A. D.; Drummond, J. P.; Jones, S. B.

2004-01-01

A variety of different types of actuators have been previously investigated as flow control devices. Potential applications include the control of boundary layer separation in external flows, as well as jet engine inlet and diffuser flow control. The operating principles for such devices are typically based on either mechanical deflection of control surfaces (which include MEMS flap devices), mass injection (which includes combustion driven jet actuators), or through the use of synthetic jets (diaphragm devices which produce a pulsating jet with no net mass flow). This paper introduces some of the initial flow visualization work related to the development of a relatively new type of combustion-driven jet actuator that has been proposed based on a pulse detonation principle. The device is designed to utilize localized detonation of a premixed fuel (Hydrogen)-air mixture to periodically inject a jet of gas transversely into the primary flow. Initial testing with airflow successfully demonstrated resonant conditions within the range of acoustic frequencies expected for the design. Schlieren visualization of the pulsating air jet structure revealed axially symmetric vortex flow, along with the formation of shocks. Flow visualization of the first successful sustained oscillation condition is also demonstrated for one configuration of the current test section. Future testing will explore in more detail the onset of resonant combustion and the approach to conditions of sustained resonant detonation.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative quenching (improved internal quantum efficiency) and improvement in light extraction (improved outcoupling efficiency). Furthermore, the electrical model is used to construct a positional radiative efficiency map that when combined with the optical enhancement reveals the overall external quantum efficiency enhancement.

Characteristics of a high-power RF source of negative hydrogen ions for neutral beam injection into controlled fusion devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abdrashitov, G. F.; Belchenko, Yu. I.; Gusev, I. A.

An injector of hydrogen atoms with an energy of 0.5–1 MeV and equivalent current of up to 1.5 A for purposes of controlled fusion research is currently under design at the Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences. Within this project, a multiple-aperture RF surface-plasma source of negative hydrogen ions is designed. The source design and results of experiments on the generation of a negative ion beam with a current of >1 A in the long-pulse mode are presented.

Enhanced performance of inverted organic photovoltaic cells using CNTs-TiO(X) nanocomposites as electron injection layer.

PubMed

Zhang, Hong; Xu, Meifeng; Cui, Rongli; Guo, Xihong; Yang, Shangyuan; Liao, Liangsheng; Jia, Quanjie; Chen, Yu; Dong, Jinquan; Sun, Baoyun

2013-09-06

In this study, we fabricated inverted organic photovoltaic cells with the structure ITO/carbon nanotubes (CNTs)-TiO(X)/P3HT:PCBM/MoO₃/Al by spin casting CNTs-TiO(X) nanocomposite (CNTs-TiO(X)) as the electron injection layer onto ITO/glass substrates. The power conversion efficiency (PCE) of the 0.1 wt% single-walled nanotubes (SWNTs)-TiO(X) nanocomposite device was almost doubled compared with the TiO(X) device, but with increasing concentration of the incorporated SWNTs in the TiO(X) film, the performance of the devices appeared to decrease rapidly. Devices with multi-walled NTs in the TiO(X) film have a similar trend. This phenomenon mainly depends on the inherent physical and chemical characteristics of CNTs such as their high surface area, their electron-accepting properties and their excellent carrier mobility. However, with increasing concentration of CNTs, CNTs-TiO(X) current leakage pathways emerged and also a recombination of charges at the interfaces. In addition, there was a significant discovery. The incorporated CNTs were highly conducive to enhancing the degree of crystallinity and the ordered arrangement of the P3HT in the active layers, due to the intermolecular π-π stacking interactions between CNTs and P3HT.

Si based GeSn light emitter: mid-infrared devices in Si photonics

NASA Astrophysics Data System (ADS)

Yu, S. Q.; Ghetmiri, S. A.; Du, W.; Margetis, J.; Zhou, Y.; Mosleh, A.; Al-Kabi, S.; Nazzal, A.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Naseem, H. A.

2015-02-01

Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

Dual-Wavelength InGaAsSb/AlGaAsSb Quantum-Well Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Nguyen, Tien Dai; Hwang, Jehwan; Kim, Yeongho; Kim, Eui-Tae; Kim, Jun Oh; Lee, Sang Jun

2018-05-01

We have investigated the structural characteristics and the device performance of three-stack InGaAsSb/AlGaAsSb quantum-well (QW) light-emitting diodes (LEDs) grown by using molecular beam epitaxy. The QW LED structure with an 8-nm well thickness had a single peak emission wavelength of 2.06 μm at an injection current of 0.3 A at room temperature. However, the QWLEDs with three different well thicknesses of 5-, 10-, and 15-nm had double peak emission wavelengths of 1.97 and 2.1 μm at an injection current of 1.1 A, which were associated with the radiative recombination in the QW with a 5-nm well thickness and the overlapped emission from the QWs with 10- and 15-nm well thicknesses, respectively.

Resonant spin wave excitations in a magnonic crystal cavity

NASA Astrophysics Data System (ADS)

Kumar, N.; Prabhakar, A.

2018-03-01

Spin polarized electric current, injected into permalloy (Py) through a nano contact, exerts a torque on the magnetization. The spin waves (SWs) thus excited propagate radially outward. We propose an antidot magnonic crystal (MC) with a three-hole defect (L3) around the nano contact, designed so that the frequency of the excited SWs, lies in the band gap of the MC. L3 thus acts as a resonant SW cavity. The energy in this magnonic crystal cavity can be tapped by an adjacent MC waveguide (MCW). An analysis of the simulated micromagnetic power spectrum, at the output port of the MCW reveals stable SW oscillations. The quality factor of the device, calculated using the decay method, was estimated as Q > 105 for an injected spin current density of 7 ×1012 A/m2.

Mechanics of the injected pulsejet into gelatin gel and evaluation of the effect by puncture and crack generation and growth

NASA Astrophysics Data System (ADS)

Kato, T.; Arafune, T.; Washio, T.; Nakagawa, A.; Ogawa, Y.; Tominaga, T.; Sakuma, I.; Kobayashi, E.

2014-08-01

Recently, fluid jets have become widely used in medical devices and have been created and evaluated in clinical environments. Such devices are classified into two broad groups; those adopting continuous jets and those adopting discrete (or pulsed) jets. We developed a discrete jet device for brain cancer treatment, called a laser-induced liquid jet (LILJ) system. Although several studies have evaluated the availability and described the treatment mechanisms of fluid jet devices, the mechanisms of the fluid and injected material remain under-investigated. In this paper, we report the mechanism of frequent pulsejet injections into a viscoelastic biological material; namely, simulated gelatin brain tissue. The mechanism is evaluated by the injection depth, an easily measured parameter. To explain the injection mechanism, we propose that the pulsejet is pressured by forces introduced by resistance on the side surface of the hole and the reaction force proportionate to the injection depth. The pulsejet generated and propagated cracks in the gelatin, and the resistance eventually fractured the side surface of the hole. We evaluated the proposed model by measuring the behavior of pulsejets injected into gelatin by the LILJ. From the results, the following conclusions were obtained. First, the proposed model accurately describes the behavior of the injected pulsejet. Second, whether the hole or crack growth largely increases the final injection depth can be evaluated from differences in the decay constant. Finally, crack growth increases the final injection depth when the number of the injected pulsejets is greater than the inverse of the decay constant.

Effect of Li2O/Al cathode in Alq3 based organic light-emitting diodes.

PubMed

Shin, Eun Chul; Ahn, Hui Chul; Han, Wone Keun; Kim, Tae Wan; Lee, Won Jae; Hong, Jin Woong; Chung, Dong Hoe; Song, Min Jong

2008-09-01

An effect of bilayer cathode Li20/Al was studied in Alq3 based organic light-emitting diodes with a variation of Li2O layer thickness. The current-luminance-voltage characteristics of ITO/TPD/Alq3/Li2O/Al device were measured at ambient condition to investigate the effect of Li2O/Al. It was found that when the thickness of Li2O layer is in the range of 0.5-1 nm, there are improvements in luminance, efficiency, and turn-on voltage of the device. A current density and a luminance are increased by about 100 times, a turn-on voltage is lowered from 6 V to 3 V, a maximum current efficiency is improved by a factor of 2.3, and a maximum power efficiency is improved by a factor of 3.2 for a device with a use of thin Li2O layer compared to those of the one without the Li2Otron-barrier height for electron injection from the cathode to the emissive layer.

Post-traumatic hepatic artery pseudoaneurysm treated with endovascular embolization and thrombin injection.

PubMed

Francisco, Lloret Estañ; Asunción, López Conesa; Antonio, Capel Alemán; Ricardo, Robles Campos; Manuel, Reus Pintado; Caridad, Marín Hernández

2010-02-27

Post-traumatic hepatic artery pseudoaneurysm is uncommon, appearing in approximately 1% of hepatic trauma cases. Most are extrahepatic (80%) and have a late onset. Although they are usually asymptomatic, they should always be treated becasue of the high risk of complications, especially breakage. Currently the treatment of choice is endovascular embolization with coils or the exclusion of the pseudoaneurysm using other intravascular devices. Recently there have been accounts of a treatment that combines embolization with coils and image-guided percutaneous human thrombin injection. We present a case of post-traumatic hepatic artery pseudoaneurysm that was successfully treated using this combined technique.

Post-traumatic hepatic artery pseudoaneurysm treated with endovascular embolization and thrombin injection

PubMed Central

Francisco, Lloret Estañ; Asunción, López Conesa; Antonio, Capel Alemán; Ricardo, Robles Campos; Manuel, Reus Pintado; Caridad, Marín Hernández

2010-01-01

Post-traumatic hepatic artery pseudoaneurysm is uncommon, appearing in approximately 1% of hepatic trauma cases. Most are extrahepatic (80%) and have a late onset. Although they are usually asymptomatic, they should always be treated becasue of the high risk of complications, especially breakage. Currently the treatment of choice is endovascular embolization with coils or the exclusion of the pseudoaneurysm using other intravascular devices. Recently there have been accounts of a treatment that combines embolization with coils and image-guided percutaneous human thrombin injection. We present a case of post-traumatic hepatic artery pseudoaneurysm that was successfully treated using this combined technique. PMID:21160978

Electrochemical doping for lowering contact barriers in organic field effect transistors

PubMed Central

Schaur, Stefan; Stadler, Philipp; Meana-Esteban, Beatriz; Neugebauer, Helmut; Serdar Sariciftci, N.

2012-01-01

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evoked at the transistor injection electrodes. An improvement is observed when comparing transistor characteristics before and after the doping process apparent by an improved transistor on-current. This effect is reflected in the analysis of the contact resistances of the devices. PMID:23483101

Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

NASA Astrophysics Data System (ADS)

Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K.

2013-06-01

The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy on GaAs (001) substrates. Electrically injected laser operation at room temperature is achieved with a threshold current density of 1.56 kA/cm2 at an emission wavelength of ˜947 nm. These results from broad area devices show great promise for developing efficient IR laser diodes based on this emerging materials system.

Using Patient Feedback to Optimize the Design of a Certolizumab Pegol Electromechanical Self-Injection Device: Insights from Human Factors Studies.

PubMed

Domańska, Barbara; Stumpp, Oliver; Poon, Steven; Oray, Serkan; Mountian, Irina; Pichon, Clovis

2018-01-01

We incorporated patient feedback from human factors studies (HFS) in the patient-centric design and validation of ava ® , an electromechanical device (e-Device) for self-injecting the anti-tumor necrosis factor certolizumab pegol (CZP). Healthcare professionals, caregivers, healthy volunteers, and patients with rheumatoid arthritis, psoriatic arthritis, ankylosing spondylitis, or Crohn's disease participated in 11 formative HFS to optimize the e-Device design through intended user feedback; nine studies involved simulated injections. Formative participant questionnaire feedback was collected following e-Device prototype handling. Validation HFS (one EU study and one US study) assessed the safe and effective setup and use of the e-Device using 22 predefined critical tasks. Task outcomes were categorized as "failures" if participants did not succeed within three attempts. Two hundred eighty-three participants entered formative (163) and validation (120) HFS; 260 participants performed one or more simulated e-Device self-injections. Design changes following formative HFS included alterations to buttons and the graphical user interface screen. All validation HFS participants completed critical tasks necessary for CZP dose delivery, with minimal critical task failures (12 of 572 critical tasks, 2.1%, in the EU study, and 2 of 5310 critical tasks, less than 0.1%, in the US study). CZP e-Device development was guided by intended user feedback through HFS, ensuring the final design addressed patients' needs. In both validation studies, participants successfully performed all critical tasks, demonstrating safe and effective e-Device self-injections. UCB Pharma. Plain language summary available on the journal website.

Determining the Impact of Steady-State PV Fault Current Injections on Distribution Protection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seuss, John; Reno, Matthew J.; Broderick, Robert Joseph

This report investigates the fault current contribution from a single large PV system and the impact it has on existing distribution overcurrent protection devices. Assumptions are made about the modeling of the PV system under fault to perform exhaustive steady - state fault analyses throughout distribution feeder models. Each PV interconnection location is tested to determine how the size of the PV system affects the fault current measured by each protection device. This data is then searched for logical conditions that indicate whether a protection device has operated in a manner that will cause more customer outages due to themore » addition of the PV system. This is referred to as a protection issue , and there are four unique types of issues that have been identified in the study. The PV system size at which any issues occur are recorded to determine the feeder's PV hosting capacity limitations due to interference with protection settings. The analysis is carried out on six feeder models. The report concludes with a discussion of the prevalence and cause of each protection issue caused by PV system fault current.« less

Utility of Vibratory Stimulation for Reducing Intraoral Injection Pain.

PubMed

Erdogan, Ozgur; Sinsawat, Anatachai; Pawa, Sudeep; Rintanalert, Duangtawan; Vuddhakanok, Suchada

2018-01-01

Intraoral local anesthesia injection is often perceived as a painful and anxiety-causing dental procedure. Vibration stimulus is one of the nonpharmacologic methods used to reduce unwanted sensations of local anesthesia injection. This clinical study evaluated the effectiveness of a recently introduced vibratory stimulation device in intraoral local anesthesia administration. Thirty-two subjects underwent 2 maxillary local anesthesia injections in 2 different sessions: 1 with conventional techniques and 1 with the aid of a vibratory stimulation device (DentalVibe). The pain levels were evaluated with a visual analog scale and the Wong-Baker FACES Pain Rating Scale. The subjects were asked to choose the preferred method for future injections. The data were evaluated statistically. There were no significant differences between the 2 injection methods with regard to either pain evaluation method. The preference of the subjects regarding future injection technique was evenly distributed between the groups. The vibratory stimulation device used in this study did not provide any reduction in pain level associated with maxillary infiltration local anesthesia administration.

A two-dimensional spin field-effect switch

NASA Astrophysics Data System (ADS)

Yan, Wenjing; Txoperena, Oihana; Llopis, Roger; Dery, Hanan; Hueso, Luis E.; Casanova, Fèlix

2016-11-01

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS2. Our device combines the superior spin transport properties of graphene with the strong spin-orbit coupling of MoS2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS2 with a gate electrode. Our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.

Dual-lasing channel quantum cascade laser based on scattering-assisted injection design.

PubMed

Wen, Boyu; Xu, Chao; Wang, Siyi; Wang, Kaixi; Tam, Man Chun; Wasilewski, Zbig; Ban, Dayan

2018-04-02

A dual lasing channel Terahertz Quantum Cascade laser (THz QCL) based on GaAs/Al 0.17 Ga 0.83 As material system is demonstrated. The device shows the lowest reported threshold current density (550A/cm 2 at 50K) of GaAs/Al x Ga 1-x As material system based scattering-assisted (SA) structures and operates up to a maximum lasing temperature of 144K. Dual lasing channel operation is investigated theoretically and experimentally. The combination of low frequency emission, dual lasing channel operation, low lasing threshold current density and high temperature performance make such devices ideal candidates for low frequency applications, and initiates the design strategy for achieving high-temperature performance terahertz quantum cascade laser with wide frequency coverage at low frequency.

Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu. M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

Low threshold current density (<400 A/cm2) injection lasing in (AlxGa1-x)0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm) is obtained. The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at preventing escape of the injected nonequilibrium electrons from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15o for (611)A substrates. The lasing at 569 nm is realized at 85 K. In the orange-red laser diode structure low threshold current density (200 A/cm2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrate room temperature lasing at 628 nm at 2 kA/cm2 and a total power above 3W. The red laser diodes grown on (211)A substrates demonstrate vertically multimode lasing far field pattern indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However the temperature stability of the threshold current and the wavelength stability are significantly higher for (211)A-grown structures in agreement with the conduction band modeling data.

Bi-anchoring organic sensitizers of type D-(π-A)2 comprising thiophene-2-acetonitrile as π-spacer and malonic acid as electron acceptor for dye sensitized solar cell applications

NASA Astrophysics Data System (ADS)

Reddy, Gachumale Saritha; Ramkumar, Sekar; Asiri, Abdullah M.; Anandan, Sambandam

2015-06-01

Two new bi-anchoring organic sensitizers of type D-(π-A)2 comprising the identical π-spacer (thiophene-2-acetonitrile) and electron acceptor (malonic acid) but different aryl amine as electron donors (diphenylamine and carbazole) were synthesized, characterized and fabricated metal free dye-sensitized solar cell devices. The intra molecular charge transfer property and electrochemical property of these dyes were investigated by molecular absorption, emission, cyclic voltammetric experiments and in addition, quantum chemical calculation studies were performed to provide sufficient driving force for the electron injection into the conduction band of TiO2 which leads to efficient charge collection. Among the fabricated devices, carbazole based device exhibits high current conversion efficiency (η = 4.7%) with a short circuit current density (JSC) 15.3 mA/cm2, an open circuit photo voltage (VOC) of 0.59 V and a fill factor of 0.44 under AM 1.5 illumination (85 mW/cm2) compared to diphenylamine based device.

Home delivery of heat-stable vaccines in Indonesia: outreach immunization with a prefilled, single-use injection device.

PubMed Central

Sutanto, A.; Suarnawa, I. M.; Nelson, C. M.; Stewart, T.; Soewarso, T. I.

1999-01-01

Extending immunization coverage to underserved populations will require innovative immunization strategies. This study evaluated one such strategy: the use of a prefilled, single-use injection device for outreach immunization by village midwives. The device, UniJect, is designed to prevent refilling or reuse. Stored at ambient temperatures for up to 1 month in midwives' homes, vaccine-filled UniJect devices were immediately available for outreach. Between July 1995 and April 1996, 110 midwives on the Indonesia islands of Lombok and Bali visited the homes of newborn infants to deliver hepatitis B vaccine to the infants and tetanus toxoid to their mothers. Observations and interviews showed that the midwives used the device properly and safely to administer approximately 10,000 sterile injections in home settings. There were no problems with excessive heat exposure during the storage or delivery of vaccine. Injection recipients and midwives expressed a strong preference for the UniJect device over a standard syringe. Use of the prefilled device outside the cold chain simplified the logistics and facilitated the speed and efficiency of home visits, while the single-dose format minimized vaccine wastage. PMID:10083709

2D Quantum Mechanical Study of Nanoscale MOSFETs

NASA Technical Reports Server (NTRS)

Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

2000-01-01

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Charge transport study in bis{2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2

NASA Astrophysics Data System (ADS)

Rai, Virendra Kumar; Srivastava, Ritu; Chauhan, Gayatri; Kumar, Arunandan; Kamalasanan, M. N.

2008-10-01

The nature of the electrical transport mechanism for carrier transport in pure bis {2-(2-hydroxyphenyl) benzoxazolate} zinc [Zn(hpb)2] has been studied by current voltage measurements of samples at different thicknesses and at different temperatures. Hole-only devices show ohmic conduction at low voltages and space charge conduction at high voltages. The space charge conduction is clearly identifiable with a square law dependence of current on voltage as well as the scaling of current inversely with the cube of thickness. With a further increase in voltage, the current increases with a Vm dependence with m varying with temperature typical of trap limited conduction with an exponential distribution of trap states. From the square law region the effective charge carrier mobility of holes has been evaluated as 2.5 × 10-11 m2 V-1 s-1. Electron-only devices however show electrode limited conduction, which was found to obey the Scott Malliaras model of charge injection.

Theory and simulations of current drive via injection of an electron beam in the ACT-1 device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okuda, H.; Horton, R.; Ono, M.

1985-02-01

One- and two-dimensional particle simulations of beam-plasma interaction have been carried out in order to understand current drive experiments that use an electron beam injected into the ACT-1 device. Typically, the beam velocity along the magnetic field is V = 10/sup 9/ cm/sec while the thermal velocity of the background electrons is v/sub t/ = 10/sup 8//cm. The ratio of the beam density to the background density is about 10% so that a strong beam-plasma instability develops causing rapid diffusion of beam particles. For both one- and two- dimensional simulations, it is found that a significant amount of beam andmore » background electrons is accelerated considerably beyond the initial beam velocity when the beam density is more than a few percent of the background plasma density. In addition, electron distribution along the magnetic field has a smooth negative slope, f' (v/sub parallel/) < 0, for v/ sub parallel/ > 0 extending v/sub parallel/ = 1.5 V approx. 2 V, which is in sharp contrast to the predictions from quasilinear theory. An estimate of the mean-free path for beam electrons due to Coulomb collisions reveals that the beam electrons can propagate a much longer distance than is predicted from a quasilinear theory, due to the presence of a high energy tail. These simulation results agree well with the experimental observations from the ACT-1 device.« less

NIMROD Simulations of the HIT-SI and HIT-SI3 Devices

NASA Astrophysics Data System (ADS)

Morgan, Kyle; Jarboe, Tom; Hossack, Aaron; Chandra, Rian; Everson, Chris

2017-10-01

The Helicity Injected Torus with Steady Inductive helicity injection (HIT-SI) experiment uses a set of inductively driven helicity injectors to apply non-axisymmetric current drive on the edge of the plasma, driving an axisymmetric spheromak equilibrium in a central confinement volume. Significant improvements have been made to extended MHD modeling of HIT-SI, with both the resolution of disagreement at high injector frequencies in HIT-SI in addition to successes with the new upgraded HIT-SI3 device. Previous numerical studies of HIT-SI, using a zero-beta eMHD model, focused on operations with a drive frequency of 14.5 kHz, and found reduced agreement with both the magnetic profile and current amplification at higher frequencies (30-70 kHz). HIT-SI3 has three helicity injectors which are able to operate with different mode structures of perturbations through the different relative temporal phasing of the injectors. Simulations that allow for pressure gradients have been performed in the parameter regimes of both devices using the NIMROD code and show improved agreement with experimental results, most notably capturing the observed Shafranov-shift due to increased beta observed at higher finj in HIT-SI and the variety of toroidal perturbation spectra available in HIT-SI3. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Fusion Energy Sciences under Award Number DE-FG02- 96ER54361.

Non-equilibrium Green's functions method: Non-trivial and disordered leads

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Yu, E-mail: heyuyhe@gmail.com; Wang, Yu; Klimeck, Gerhard

2014-11-24

The non-equilibrium Green's function algorithm requires contact self-energies to model charge injection and extraction. All existing approaches assume infinitely periodic leads attached to a possibly quite complex device. This contradicts today's realistic devices in which contacts are spatially inhomogeneous, chemically disordered, and impacting the overall device characteristics. This work extends the complex absorbing potentials method for arbitrary, ideal, or non-ideal leads in atomistic tight binding representation. The algorithm is demonstrated on a Si nanowire with periodic leads, a graphene nanoribbon with trumpet shape leads, and devices with leads of randomly alloyed Si{sub 0.5}Ge{sub 0.5}. It is found that alloy randomnessmore » in the leads can reduce the predicted ON-state current of Si{sub 0.5}Ge{sub 0.5} transistors by 45% compared to conventional lead methods.« less

Single-use autoinjector for once-weekly intramuscular injection of IFNβ-1a.

PubMed

Limmroth, Volker; Gerbershagen, Kathrin

2014-12-01

IFNβ products and glatiramer acetate are established treatment first-line options in long-term disease-modifying therapy of multiple sclerosis (MS). These self-injectable medications are used once weekly to once daily. Injection-related issues are common patient-cited reasons for nonadherence. Autoinjectors have been shown to support long-term adherence to injectable medications. The ability to self-inject in MS patients has been associated with a reduced risk of missed injections and drug discontinuation, and a beneficial effect on patient independence. The recently introduced easy-to-use prefilled once-weekly pen is a safe and effective device for intramuscular (IM) IFNβ-1a application and provides a convenient method for self-injection. We reviewed the available published evidence on the characteristics of this device. The once-weekly pen facilitates self-injection and was preferred over prefilled syringes by patients in a prospective open-label, multicenter Phase IIIb trial in MS patients who had been using IM IFNβ-1a in prefilled syringes. The simple and safe handling, shielded short needle, single-use disposable design and virtually painless injection by the device may contribute to adherence, quality of life and independence in patients using IM IFNβ-1a.

Systems and methods to reduce reductant consumption in exhaust aftertreament systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Aniket; Cunningham, Michael J.

Systems, apparatus and methods are provided for reducing reductant consumption in an exhaust aftertreatment system that includes a first SCR device and a downstream second SCR device, a first reductant injector upstream of the first SCR device, and a second reductant injector between the first and second SCR devices. NOx conversion occurs with reductant injection by the first reductant injector to the first SCR device in a first temperature range and with reductant injection by the second reductant injector to the second SCR device when the temperature of the first SCR device is above a reductant oxidation conversion threshold.

Steady state scenario development with elevated minimum safety factor on DIII-D

DOE PAGES

Holcomb, Christopher T.; Ferron, John R.; Luce, Timothy C.; ...

2014-08-15

On DIII-D, a high β scenario with minimum safety factor (q min) near 1.4 has been optimized with new tools and shown to be a favourable candidate for long pulse or steady state operation in future devices. Furthermore, the new capability to redirect up to 5 MW of neutral beam injection (NBI) from on- to off-axis improves the ability to sustain elevated q min with a less peaked pressure profile. The observed changes increase the ideal magnetohydrodynamics (MHD) n = 1 mode β N limit thus providing a path forward for increasing the noninductive current drive fraction by operating atmore » high β N. Quasi-stationary discharges free of tearing modes have been sustained at βN = 3.5 and β T = 3.6% for two current profile diffusion timescales (about 3 s) limited by neutral beam duration. The discharge performance has normalized fusion performance expected to give fusion gain Q ≈ 5 in a device the size of ITER. Analysis of the poloidal flux evolution and current drive balance show that the loop voltage profile is almost relaxed even with 25% of the current driven inductively, and q min remains elevated near 1.4. Our observations increase confidence that the current profile will not evolve to one unstable to a tearing mode. In preliminary tests a divertor heat flux reduction technique based on producing a radiating mantle with neon injection appears compatible with this operating scenario. 0D model extrapolations suggest it may be possible to push this scenario up to 100% noninductive current drive by raising β N. Similar discharges with q min = 1.5–2 were susceptible to tearing modes and off-axis fishbones, and with q min > 2 lower normalized global energy confinement time is observed.« less

Effects of insulator ablation on the operation of a quasi-steady MPD arc

NASA Technical Reports Server (NTRS)

Boyle, M. J.; Jahn, R. G.

1973-01-01

Multimegawatt operation of quasi-steady MPD arcjets can involve serious ablation of the insulator surfaces within the arc discharge chamber. Various degrees of insulator ablation manifest themselves by significantly perturbing the voltage-current characteristics and the exhaust velocity profiles. Voltage-current characteristics for two different insulator materials, Plexiglas and boron nitride, are interpreted in terms of an empirical Ohm's law. Use of the refractory insulator material eliminates the ablation-dominated nature of the terminal voltage, but the exhaust stream is still disturbed by insulator material. An Alfven critical velocity model can be applied to this influence of insulator ablation on exhaust velocity. Appropriate changes in the propellant injection geometry eliminate this influence and result in arcjet operation which is independent of insulator material. A particular combination of propellant injection geometries reduces the terminal voltage for a given current and mass flow while maintaining insulator-independent operation, thus implying an improvement in the overall efficiency of the device.

Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

DOEpatents

Alivisatos, A. Paul; Colvin, Vickie

1996-01-01

An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

Temporary Vascular Occlusion by Rapid Reverse Phase Polymer: A Preliminary In Vitro Study of Retrograde Injection

PubMed Central

Dregelid, Einar

2012-01-01

During vascular surgical operations, there is a need for a simpler and more reliable method of temporary arterial occlusion than those currently employed, especially of heavily calcified arteries. A thermosensitive polymer, LeGoo (LG) (Pluromed, Woburn, MA), has been used successfully for temporary vascular occlusion. It has hitherto been injected by a cannula that has been introduced into the artery to be occluded, here henceforth called the “cannulation method.” Injection into arterial ostia without cannulation, using an injection device that arrests blood flow during the injection, here henceforth called “a retrograde method” may enable temporary hemostasis when ostial stenoses render it impossible to inject LG using the cannulation method. The objective of the present study was to study the feasibility of a retrograde method and to compare it with the cannulation method in an in vitro model, incorporating a narrow orifice to simulate ostial stenosis, using tap water at 37°C instead of blood. The retrograde method of LG injection, using a modified paediatric Foley catheter, turned out to be feasible to produce a durable LG plug more reliably, at higher water pressure and with less deep LG injection than with the cannulation method. PMID:22888352

Proton radiation damage experiment on P-Channel CCD for an X-ray CCD camera onboard the ASTRO-H satellite

NASA Astrophysics Data System (ADS)

Mori, Koji; Nishioka, Yusuke; Ohura, Satoshi; Koura, Yoshiaki; Yamauchi, Makoto; Nakajima, Hiroshi; Ueda, Shutaro; Kan, Hiroaki; Anabuki, Naohisa; Nagino, Ryo; Hayashida, Kiyoshi; Tsunemi, Hiroshi; Kohmura, Takayoshi; Ikeda, Shoma; Murakami, Hiroshi; Ozaki, Masanobu; Dotani, Tadayasu; Maeda, Yukie; Sagara, Kenshi

2013-12-01

We report on a proton radiation damage experiment on P-channel CCD newly developed for an X-ray CCD camera onboard the ASTRO-H satellite. The device was exposed up to 109 protons cm-2 at 6.7 MeV. The charge transfer inefficiency (CTI) was measured as a function of radiation dose. In comparison with the CTI currently measured in the CCD camera onboard the Suzaku satellite for 6 years, we confirmed that the new type of P-channel CCD is radiation tolerant enough for space use. We also confirmed that a charge-injection technique and lowering the operating temperature efficiently work to reduce the CTI for our device. A comparison with other P-channel CCD experiments is also discussed. We performed a proton radiation damage experiment on a new P-channel CCD. The device was exposed up to 109 protons cm-2 at 6.7 MeV. We confirmed that it is radiation tolerant enough for space use. We confirmed that a charge-injection technique reduces the CTI. We confirmed that lowering the operating temperature also reduces the CTI.

The ITPA disruption database

DOE PAGES

Eidietis, N. W.; Gerhardt, S. P.; Granetz, R. S.; ...

2015-05-22

A multi-device database of disruption characteristics has been developed under the auspices of the International Tokamak Physics Activity magneto hydrodynamics topical group. The purpose of this ITPA Disruption Database (IDDB) is to find the commonalities between the disruption and disruption mitigation characteristics in a wide variety of tokamaks in order to elucidate the physics underlying tokamak disruptions and to extrapolate toward much larger devices, such as ITER and future burning plasma devices. Conversely, in order to previous smaller disruption data collation efforts, the IDDB aims to provide significant context for each shot provided, allowing exploration of a wide array ofmore » relationships between pre-disruption and disruption parameters. Furthermore, the IDDB presently includes contributions from nine tokamaks, including both conventional aspect ratio and spherical tokamaks. An initial parametric analysis of the available data is presented. Our analysis includes current quench rates, halo current fraction and peaking, and the effectiveness of massive impurity injection. The IDDB is publicly available, with instruction for access provided herein.« less

Inverted organic electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Small, Cephas E.

The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8% were obtained. To further study carrier extraction in inverted polymer solar cells, the active layer thickness dependence of the efficiency was investigated. For devices with active layer thickness < 200 nm, power conversion efficiencies over 8% was obtained. This result is important for demonstrating improved large-scale processing compatibility. Above 200 nm, significant reduction in cell efficiency were observed. A detailed study of the loss processes that contributed to the reduction in efficiency for thick-film devices are presented.

Fluid injection device for high-pressure systems

NASA Technical Reports Server (NTRS)

Copeland, E. J.; Ward, J. B.

1970-01-01

Screw activated device, consisting of a compressor, shielded replaceable ampules, a multiple-element rubber gland, and a specially constructed fluid line fitting, injects measured amounts of fluids into a pressurized system. It is sturdy and easily manipulated.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Monolithically integrated Si gate-controlled light-emitting device: science and properties

NASA Astrophysics Data System (ADS)

Xu, Kaikai

2018-02-01

The motivation of this study is to develop a p-n junction based light emitting device, in which the light emission is conventionally realized using reverse current driving, by voltage driving. By introducing an additional terminal of insulated gate for voltage driving, a novel three-terminal Si light emitting device is described where both the light intensity and spatial light pattern of the device are controlled by the gate voltage. The proposed light emitting device employs injection-enhanced Si in avalanche mode where electric field confinement occurs in the corner of a reverse-biased p+n junction. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage or the reverse-bias. Since the light emission is based on the avalanching mode, the Si light emitting device offers the potential for very large scale integration-compatible light emitters for inter- or intra-chip signal transmission and contactless functional testing of wafers.

In vivo studies on insulin permeability of an immunoisolation device intended for islet transplantation using the microdialysis technique.

PubMed

Rafael, E; Wernerson, A; Arner, P; Tibell, A

1999-01-01

In this study, insulin was injected into Theracyte immunoisolation devices to analyze changes in the permeability of the device over time after implantation. The recovery of insulin was studied after subcutaneous implantation of the devices in rats, using the microdialysis technique. The area under the insulin concentration vs. time curves (AUC) after insulin injection in devices implanted 1 day previously did not differ significantly from the AUC after subcutaneous injection. At 1, 2 and 4 weeks after implantation, the recovery of insulin was significantly reduced, but at 3 months, the AUC was not significantly different from that in the control group. Histological examination showed that the number of vascular profiles within 15 microm of the device were significantly higher at 2, 4 weeks and 3 months after transplantation when compared to numbers at 1 week. The design of the device allows transplantation of cells at a chosen time point after its implantation. Delayed filling of the device would allow neovascularization of the device surface before graft implantation and we suggest that such a schedule might improve function of the encapsulated graft.

Effect of partially ionized impurities and radiation on the effective critical electric field for runaway generation

NASA Astrophysics Data System (ADS)

Hesslow, L.; Embréus, O.; Wilkie, G. J.; Papp, G.; Fülöp, T.

2018-07-01

We derive a formula for the effective critical electric field for runaway generation and decay that accounts for the presence of partially ionized impurities in combination with synchrotron and bremsstrahlung radiation losses. We show that the effective critical field is drastically larger than the classical Connor–Hastie field, and even exceeds the value obtained by replacing the free electron density by the total electron density (including both free and bound electrons). Using a kinetic equation solver with an inductive electric field, we show that the runaway current decay after an impurity injection is expected to be linear in time and proportional to the effective critical electric field in highly inductive tokamak devices. This is relevant for the efficacy of mitigation strategies for runaway electrons since it reduces the required amount of injected impurities to achieve a certain current decay rate.

Assistive Device for Efficient Intravitreal Injections.

PubMed

Ullrich, Franziska; Michels, Stephan; Lehmann, Daniel; Pieters, Roel S; Becker, Matthias; Nelson, Bradley J

2016-08-01

Intravitreal therapy is the most common treatment for many chronic ophthalmic diseases, such as age-related macular degeneration. Due to the increasing worldwide demand for intravitreal injections, there exists a need to render this medical procedure more time- and cost-efficient while increasing patient safety. The authors propose a medical assistive device that injects medication intravitreally. Compared to the manual intravitreal injection procedure, an automated device has the potential to increase safety for patients, decrease procedure times, allow for integrated data storage and documentation, and reduce costs for medical staff and expensive operating rooms. This work demonstrates the development of an assistive injection system that is coarsely positioned over the patient's head by the human operator, followed by automatic fine positioning and intravitreal injection through the pars plana. Several safety features, such as continuous eye tracking and iris recognition, have been implemented. The functioning system is demonstrated through ex vivo experiments with porcine eyes. [Ophthalmic Surg Lasers Imaging Retina. 2016;47:752-762.]. Copyright 2016, SLACK Incorporated.

Clinical evaluation of a novel microneedle device for intradermal delivery of an influenza vaccine: are all delivery methods the same?

PubMed

Levin, Yotam; Kochba, Efrat; Kenney, Richard

2014-07-23

The skin provides the largest immune barrier to infection and is a readily accessible site for vaccination, although intradermal (ID) injection can be challenging. The MicronJet™ microneedle is a novel device that consistently injects antigens very close to the skin's dendritic cells. A dose-sparing ID injection study was conducted in 280 healthy adult volunteers using trivalent virosomal adjuvanted influenza vaccine. ID injection of 3 μg using the MicronJet™ was well tolerated and showed a statistically higher geometric mean fold rise than the same dose ID using a conventional needle (Mantoux technique) for the H1N1 and B strains or a 15 μg intramuscular (IM) injection for the H3N2 strain. Thus, the immune response appears to partially depend on the delivery device and route of injection. The MicronJet™ may allow dose-sparing, yet give a superior response in influenza vaccination and warrants further clinical evaluation. Copyright © 2014 Elsevier Ltd. All rights reserved.

Electrokinetic focusing injection methods on microfluidic devices.

PubMed

Fu, Lung-Ming; Yang, Ruey-Jen; Lee, Gwo-Bin

2003-04-15

This paper presents an experimental and numerical investigation into electrokinetic focusing injection on microfluidic chips. The valving characteristics on microfluidic devices are controlled through appropriate manipulations of the electric potential strengths during the sample loading and dispensing steps. The present study also addresses the design and testing of various injection systems used to deliver a sample plug. A novel double-cross injection microfluidic chip is fabricated, which employs electrokinetic focusing to deliver sample plugs of variable volume. The proposed design combines several functions of traditional sample plug injection systems on a single microfluidic chip. The injection technique uses an unique sequence of loading steps with different electric potential distributions and magnitudes within the various channels to effectuate a virtual valve.

Uniject as a delivery system for the once-a-month injectable contraceptive Cyclofem in Brazil.

PubMed

Bahamondes, L; Marchi, N M; de Lourdes Cristofoletti, M; Nakagava, H M; Pellini, E; Araujo, F; Rubin, J

1996-02-01

This study assessed the administration of Cyclofem using prefilled Uniject devices. A total of 480 injections were administered divided equally between standard syringes and Uniject. The majority of women (82%) reported that they felt anxious prior to receiving the injection with Uniject. After injection, more than 80% expressed no anxiety about the appearance of Uniject or about the technique of injection. A total of 96.3% of the participants reported slight to no pain with Uniject. In comparison to the standard syringe, 5.6% expressed having had more pain with Uniject. Ninety percent of the service providers reported that Uniject was easy to activate and inject and that it was reassuring for users to know that the syringe and needle had never been used previously. Only two service providers demonstrated difficulties in activating the device. No accidental punctures occurred during the manipulation, and incomplete emptying of the Uniject was not observed. In conclusion, Uniject is a good device for the administration of the injectable contraceptive Cyclofem. It is likely to be appropriate for the delivery of other injectable contraceptives after the necessary stability tests have been performed.

Sample injection and electrophoretic separation on a simple laminated paper based analytical device.

PubMed

Xu, Chunxiu; Zhong, Minghua; Cai, Longfei; Zheng, Qingyu; Zhang, Xiaojun

2016-02-01

We described a strategy to perform multistep operations on a simple laminated paper-based separation device by using electrokinetic flow to manipulate the fluids. A laminated crossed-channel paper-based separation device was fabricated by cutting a filter paper sheet followed by lamination. Multiple function units including sample loading, sample injection, and electrophoretic separation were integrated on a single paper based analytical device for the first time, by applying potential at different reservoirs for sample, sample waste, buffer, and buffer waste. As a proof-of-concept demonstration, mixed sample solution containing carmine and sunset yellow were loaded in the sampling channel, and then injected into separation channel followed by electrophoretic separation, by adjusting the potentials applied at the four terminals of sampling and separation channel. The effects of buffer pH, buffer concentration, channel width, and separation time on resolution of electrophoretic separation were studied. This strategy may be used to perform multistep operations such as reagent dilution, sample injection, mixing, reaction, and separation on a single microfluidic paper based analytical device, which is very attractive for building micro total analysis systems on microfluidic paper based analytical devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A two-dimensional spin field-effect switch

DOE PAGES

Yan, Wenjing; Txoperena, Oihana; Llopis, Roger; ...

2016-11-11

Future development in spintronic devices will require an advanced control of spin currents, for example by an electric field. Here we demonstrate an approach that differs from previous proposals such as the Datta and Das modulator, and that is based on a van de Waals heterostructure of atomically thin graphene and semiconducting MoS 2. Our device combines the superior spin transport properties of graphene with the strong spin–orbit coupling of MoS 2 and allows switching of the spin current in the graphene channel between ON and OFF states by tuning the spin absorption into the MoS 2 with a gatemore » electrode. Lastly, our proposal holds potential for technologically relevant applications such as search engines or pattern recognition circuits, and opens possibilities towards electrical injection of spins into transition metal dichalcogenides and alike materials.« less

Hydrogels for central nervous system therapeutic strategies.

PubMed

Russo, Teresa; Tunesi, Marta; Giordano, Carmen; Gloria, Antonio; Ambrosio, Luigi

2015-12-01

The central nervous system shows a limited regenerative capacity, and injuries or diseases, such as those in the spinal, brain and retina, are a great problem since current therapies seem to be unable to achieve good results in terms of significant functional recovery. Different promising therapies have been suggested, the aim being to restore at least some of the lost functions. The current review deals with the use of hydrogels in developing advanced devices for central nervous system therapeutic strategies. Several approaches, involving cell-based therapy, delivery of bioactive molecules and nanoparticle-based drug delivery, will be first reviewed. Finally, some examples of injectable hydrogels for the delivery of bioactive molecules in central nervous system will be reported, and the key features as well as the basic principles in designing multifunctional devices will be described. © IMechE 2015.

Integration of continuous-flow sampling with microchip electrophoresis using poly(dimethylsiloxane)-based valves in a reversibly sealed device.

PubMed

Li, Michelle W; Martin, R Scott

2007-07-01

Here we describe a reversibly sealed microchip device that incorporates poly(dimethylsiloxane) (PDMS)-based valves for the rapid injection of analytes from a continuously flowing stream into a channel network for analysis with microchip electrophoresis. The microchip was reversibly sealed to a PDMS-coated glass substrate and microbore tubing was used for the introduction of gas and fluids to the microchip device. Two pneumatic valves were incorporated into the design and actuated on the order of hundreds of milliseconds, allowing analyte from a continuously flowing sampling stream to be injected into an electrophoresis separation channel. The device was characterized in terms of the valve actuation time and pushback voltage. It was also found that the addition of sodium dodecyl sulfate (SDS) to the buffer system greatly increased the reproducibility of the injection scheme and enabled the analysis of amino acids derivatized with naphthalene-2,3-dicarboxaldehyde/cyanide. Results from continuous injections of a 0.39 nL fluorescein plug into the optimized system showed that the injection process was reproducible (RSD of 0.7%, n = 10). Studies also showed that the device was capable of monitoring off-chip changes in concentration with a device lag time of 90 s. Finally, the ability of the device to rapidly monitor on-chip concentration changes was demonstrated by continually sampling from an analyte plug that was derivatized upstream from the electrophoresis/continuous flow interface. A reversibly sealed device of this type will be useful for the continuous monitoring and analysis of processes that occur either off-chip (such as microdialysis sampling) or on-chip from other integrated functions.

Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

PubMed

Park, So-Ra; Suh, Min Chul

2018-02-19

To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

Enhanced organic memory devices (OMEM) with a photochromic perhydro DTE as a transduction layer (Conference Presentation)

NASA Astrophysics Data System (ADS)

Cordes, Sandra; Kranz, Darius; Maibach, Eduard; Kempf, Maxim; Meerholz, Klaus

2016-09-01

In modern electronic systems memory elements are of fundamental importance for data storage. Especially solution-processable nonvolatile organic memories, which are inexpensive and can be manufactured on flexible substrates, are a promising alternative to brittle inorganic devices. Organic photochromic switchable compounds, mostly dithienylethenes (DTEs), are thermally stable, fatigue resistant and can undergo an electrically- or/and photo-induced ring-opening and -closing reaction which results in a change of energy levels. Due to the energetic difference in the highest occupied molecular orbital (HOMO) between the open and closed isomer, the DTE layer can be exploited as a switchable hole injection barrier that controls the electrical current in the diode. We demonstrated that a light-emitting organic memory (LE-OMEM) device with a perfluoro DTE transduction layer can be switched electrically via high current densities pulses and optically by irradiated light, with impressive current ON/OFF Ratios (OOR) of 10Λ2, 10Λ4 respectively. Currently we aim to minimize the barrier of the ON state and maximize the barrier of the OFF state by designing DTE molecules with larger differences in the HOMO energies of the two isomers yielding improved OOR values. By synthesizing perhydro derivates of DTE we achieved molecules with high HOMO levels and large ΔHOMO energies providing OMEM devices with excellent physical properties (OOR 1.4 x higher than perfluoro DTE). Due to the high HOMO level of the perhydro DTE utilization of hole transport layers (HTLs) is not necessary and thus manufacturing of OMEM devices is simplified.

Assurance Cases for Medical Devices

DTIC Science & Technology

2011-04-28

the patient, and the hospital setting. Some pumps allow the patient to control part of the injection process (e.g. to inject more painkiller ...overdose, incorrect therapy, etc.   Design and development decisions that bear on safety and effectiveness http://www.fda.gov/MedicalDevices

Tetrakis(1-imidazolyl) borate (BIM4) based zwitterionic and related molecules used as electron injection layers

DOEpatents

Li, Huaping; Xu, Yunhua; Bazan, Guillermo C

2013-02-05

Tetrakis(1-imidazolyl)borate (BIm4) based zwitterionic and/or related molecules for the fabrication of PLEDs is provided. Device performances with these materials approaches that of devices with Ba/Al cathodes for which the cathode contact is ohmic. Methods of producing such materials, and electron injection layers and devices containing these materials are also provided.

Solid state carbon nanotube device for controllable trion electroluminescence emission

NASA Astrophysics Data System (ADS)

Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2016-03-01

Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07468a

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies

NASA Astrophysics Data System (ADS)

Kotadiya, Naresh B.; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W. M.; Wetzelaer, Gert-Jan A. H.

2018-02-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Performance improvement of magnetized coaxial plasma gun by magnetic circuit on a bias coil

NASA Astrophysics Data System (ADS)

Edo, Takahiro; Matsumoto, Tadafumi; Asai, Tomohiko; Kamino, Yasuhiro; Inomoto, Michiaki; Gota, Hiroshi

2016-10-01

A magnetized coaxial plasmoid accelerator has been utilized for compact torus (CT) injection to refuel into fusion reactor core plasma. Recently, CT injection experiments have been conducted on the C-2/C-2U facility at Tri Alpha Energy. In the series of experiments successful refueling, i.e. increased particle inventory of field-reversed configuration (FRC) plasma, has been observed. In order to improve the performance of CT injector and to refuel in the upgraded FRC device, called C-2W, with higher confinement magnetic field, magnetic circuit consisting of magnetic material onto a bias magnetic coil is currently being tested at Nihon University. Numerical work suggests that the optimized bias magnetic field distribution realizes the increased injection velocity because of higher conversion efficiency of Lorenz self force to kinetic energy. Details of the magnetic circuit design as well as results of the test experiment and field calculations will be presented and discussed.

Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

PubMed

Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

2018-04-01

Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

Micro-battery Development for Juvenile Salmon Acoustic Telemetry System Applications

NASA Astrophysics Data System (ADS)

Chen, Honghao; Cartmell, Samuel; Wang, Qiang; Lozano, Terence; Deng, Z. Daniel; Li, Huidong; Chen, Xilin; Yuan, Yong; Gross, Mark E.; Carlson, Thomas J.; Xiao, Jie

2014-01-01

The Endangered Species Act requires actions that improve the passage and survival rates for migrating salmonoids and other fish species that sustain injury and mortality when passing through hydroelectric dams. To develop a low-cost revolutionary acoustic transmitter that may be injected instead of surgically implanted into the fish, one major challenge that needs to be addressed is the micro-battery power source. This work focuses on the design and fabrication of micro-batteries for injectable fish tags. High pulse current and required service life have both been achieved as well as doubling the gravimetric energy density of the battery. The newly designed micro-batteries have intrinsically low impedance, leading to significantly improved electrochemical performances at low temperatures as compared with commercial SR416 batteries. Successful field trial by using the micro-battery powered transmitters injected into fish has been demonstrated, providing an exemplary model of transferring fundamental research into practical devices with controlled qualities.

Clinical, economic, and humanistic burden of needlestick injuries in healthcare workers

PubMed Central

Cooke, Catherine E; Stephens, Jennifer M

2017-01-01

Introduction Needlestick injuries (NSIs) from a contaminated needle put healthcare workers (HCWs) at risk of becoming infected with a blood-borne virus and suffering serious short- and long-term medical consequences. Hypodermic injections using disposable syringes and needles are the most frequent cause of NSIs. Objective To perform a systematic literature review on NSI and active safety-engineered devices for hypodermic injection. Methods MEDLINE, EMBASE, and COCHRANE databases were searched for studies that evaluated the clinical, economic, or humanistic outcomes of NSI or active safety-engineered devices. Results NSIs have been reported by 14.9%–69.4% of HCWs with the wide range due to differences in countries, settings, and methodologies used to determine rates. Exposure to contaminated sharps is responsible for 37%–39% of the worldwide cases of hepatitis B and C infections in HCWs. HCWs may experience serious emotional effects and mental health disorders after a NSI, resulting in work loss and post-traumatic stress disorder. In 2015 International US$ (IntUS$), the average cost of a NSI was IntUS$747 (range IntUS$199–1,691). Hypodermic injections, the most frequent cause of NSI, are responsible for 32%–36% of NSIs. The use of safety devices that cover the needle-tip after hypodermic injection lowers the risk of NSI per HCW by 43.4%–100% compared to conventional devices. The economic value of converting to safety injective devices shows net savings, favorable budget impact, and overall cost-effectiveness. Conclusion The clinical, economic, and humanistic burden is substantial for HCWs who experience a NSI. Safety-engineered devices for hypodermic injection demonstrate value by reducing NSI risk, and the associated direct and indirect costs, psychological stress on HCWs, and occupational blood-borne viral infection risk. PMID:29033615

Model-based estimates of risks of disease transmission and economic costs of seven injection devices in sub-Saharan Africa.

PubMed Central

Ekwueme, Donatus U.; Weniger, Bruce G.; Chen, Robert T.

2002-01-01

OBJECTIVE: To investigate and compare seven types of injection devices for their risks of iatrogenic transmission of bloodborne pathogens and their economic costs in sub-Saharan Africa. METHODS: Risk assumptions for each device and cost models were constructed to estimate the number of new hepatitis B virus (HBV) and human immunodeficiency virus (HIV) infections resulting from patient-to-patient, patient-to-health care worker, and patient-to-community transmission. Costs of device purchase and usage were derived from the literature, while costs of direct medical care and lost productivity from HBV and HIV disease were based on data collected in 1999 in Côte d'Ivoire, Ghana, and Uganda. Multivariate sensitivity analyses using Monte Carlo simulation characterized uncertainties in model parameters. Costs were summed from both the societal and health care system payer's perspectives. FINDINGS: Resterilizable and disposable needles and syringes had the highest overall costs for device purchase, usage, and iatrogenic disease: median US dollars 26.77 and US dollars 25.29, respectively, per injection from the societal perspective. Disposable-cartridge jet injectors and automatic needle-shielding syringes had the lowest costs, US dollars 0.36 and US dollars 0.80, respectively. Reusable-nozzle jet injectors and auto-disable needle and syringes were intermediate, at US dollars 0.80 and US dollars 0.91, respectively, per injection. CONCLUSION: Despite their nominal purchase and usage costs, conventional needles and syringes carry a hidden but huge burden of iatrogenic disease. Alternative injection devices for the millions of injections administered annually in sub-Saharan Africa would be of value and should be considered by policy-makers in procurement decisions. PMID:12481207

Zn2GeO4 nanowires as efficient electron injection material for electroluminescent devices.

PubMed

Wang, Jiangxin; Yan, Chaoyi; Magdassi, Shlomo; Lee, Pooi See

2013-08-14

Pure phase Zn2GeO4 nanowires (NWs) were grown by the chemical vapor transport method on p-GaN: Mg/Al2O3 substrate. The as-grown Zn2GeO4 NWs exhibited n-type characteristic due to native defects and formed a p-n heterojunction with the p-GaN substrate. The unique energy level of Zn2GeO4 NWs promotes electron injection into GaN active region while suppressing hole injection into Zn2GeO4 NWs. The device exhibited an emission centered at 426 nm and a low turn-on voltage around 4 V. Zn2GeO4 NWs are first reported in this paper as promising electron transport and injection material for electroluminescent devices.

(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range

NASA Astrophysics Data System (ADS)

Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu; Maximov, M. V.; Cherkashin, N. A.

2017-02-01

We report on low threshold current density (<400 A cm-2) injection lasing in (Al x Ga1-x )0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm). The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at reflection of the injected nonequilibrium electrons preventing their escape from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15° for (611)A substrates. The lasing at the wavelength of 569 nm is realized at 85 K. In an orange-red laser diode structure low threshold current density (190 A cm-2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrated room temperature lasing at 628 nm at ˜2 kA cm-2 and a total power above 3 W. The red laser diodes grown on (211)A substrates demonstrated a far field characteristic for vertically multimode lasing indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However, as expected from previous research, the temperature stability of the threshold current and the wavelength stability were significantly higher for (211)A-grown structures.

Excitation of propagating spin waves by pure spin current

NASA Astrophysics Data System (ADS)

Demokritov, Sergej

Recently it was demonstrated that pure spin currents can be utilized to excite coherent magnetization dynamics, which enables development of novel magnetic nano-oscillators. Such oscillators do not require electric current flow through the active magnetic layer, which can help to reduce the Joule power dissipation and electromigration. In addition, this allows one to use insulating magnetic materials and provides an unprecedented geometric flexibility. The pure spin currents can be produced by using the spin-Hall effect (SHE). However, SHE devices have a number of shortcomings. In particular, efficient spin Hall materials exhibit a high resistivity, resulting in the shunting of the driving current through the active magnetic layer and a significant Joule heating. These shortcomings can be eliminated in devices that utilize spin current generated by the nonlocal spin-injection (NLSI) mechanism. Here we review our recent studies of excitation of magnetization dynamics and propagating spin waves by using NLSI. We show that NLSI devices exhibit highly-coherent dynamics resulting in the oscillation linewidth of a few MHz at room temperature. Thanks to the geometrical flexibility of the NLSI oscillators, one can utilize dipolar fields in magnetic nano-patterns to convert current-induced localized oscillations into propagating spin waves. The demonstrated systems exhibit efficient and controllable excitation and directional propagation of coherent spin waves characterized by a large decay length. The obtained results open new perspectives for the future-generation electronics using electron spin degree of freedom for transmission and processing of information on the nanoscale.

Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.

PubMed

Li, Junqiang; Shan, Xin; Bade, Sri Ganesh R; Geske, Thomas; Jiang, Qinglong; Yang, Xin; Yu, Zhibin

2016-10-03

Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m -2 at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W -1 . Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.

Efficient Carrier-to-Exciton Conversion in Field Emission Tunnel Diodes Based on MIS-Type van der Waals Heterostack.

PubMed

Wang, Shunfeng; Wang, Junyong; Zhao, Weijie; Giustiniano, Francesco; Chu, Leiqiang; Verzhbitskiy, Ivan; Zhou Yong, Justin; Eda, Goki

2017-08-09

We report on efficient carrier-to-exciton conversion and planar electroluminescence from tunnel diodes based on a metal-insulator-semiconductor (MIS) van der Waals heterostack consisting of few-layer graphene (FLG), hexagonal boron nitride (hBN), and monolayer tungsten disulfide (WS 2 ). These devices exhibit excitonic electroluminescence with extremely low threshold current density of a few pA·μm -2 , which is several orders of magnitude lower compared to the previously reported values for the best planar EL devices. Using a reference dye, we estimate the EL quantum efficiency to be ∼1% at low current density limit, which is of the same order of magnitude as photoluminescence quantum yield at the equivalent excitation rate. Our observations reveal that the efficiency of our devices is not limited by carrier-to-exciton conversion efficiency but by the inherent exciton-to-photon yield of the material. The device characteristics indicate that the light emission is triggered by injection of hot minority carriers (holes) to n-doped WS 2 by Fowler-Nordheim tunneling and that hBN serves as an efficient hole-transport and electron-blocking layer. Our findings offer insight into the intelligent design of van der Waals heterostructures and avenues for realizing efficient excitonic devices.

Modelling of the hole-initiated impact ionization current in the framework of hydrodynamic equations

NASA Astrophysics Data System (ADS)

Lorenzini, Martino; Van Houdt, Jan

2002-02-01

Several research papers have shown the feasibility of the hydrodynamic transport model to investigate impact ionization in semiconductor devices by means of mean-energy-dependent generation rates. However, the analysis has been usually carried out for the case of the electron-initiated impact ionization process and less attention has been paid to the modelling of the generation rate due to impact ionization events initiated by holes. This paper therefore presents an original model for the hole-initiated impact ionization in silicon and validates it by comparing simulation results with substrate currents taken from p-channel transistors manufactured in a 0.35 μm CMOS technology having three different channel lengths. The experimental data are successfully reproduced over a wide range of applied voltages using only one fitting parameter. Since the impact ionization of holes triggers the mechanism responsible for the back-bias enhanced gate current in deep submicron nMOS devices, the model can be exploited in the development of non-volatile memories programmed by secondary electron injection.

Comparison of Detector Technologies for CAPS

NASA Technical Reports Server (NTRS)

Stockum, Jana L.

2005-01-01

In this paper, several different detectors are examined for use in a Comet/Asteroid Protection System (CAPS), a conceptual study for a possible future space-based system. Each detector will be examined for its future (25 years or more in the future) ability to find and track near-Earth Objects (NEOs) from a space-based detection platform. Within the CAPS study are several teams of people who each focus on different aspects of the system concept. This study s focus is on detection devices. In particular, evaluations on the following devices have been made: charge-coupled devices (CCDs), charge-injected devices (CIDs), superconducting tunneling junctions (STJs), and transition edge sensors (TESs). These devices can be separated into two main categories; the first category includes detectors that are currently being widely utilized, such as CCDs and CIDs. The second category includes experimental detectors, such as STJs and TESs. After the discussion of the detectors themselves, there will be a section devoted to the explicit use of these detectors with CAPS.

Transfection in perfused microfluidic cell culture devices: A case study.

PubMed

Raimes, William; Rubi, Mathieu; Super, Alexandre; Marques, Marco P C; Veraitch, Farlan; Szita, Nicolas

2017-08-01

Automated microfluidic devices are a promising route towards a point-of-care autologous cell therapy. The initial steps of induced pluripotent stem cell (iPSC) derivation involve transfection and long term cell culture. Integration of these steps would help reduce the cost and footprint of micro-scale devices with applications in cell reprogramming or gene correction. Current examples of transfection integration focus on maximising efficiency rather than viable long-term culture. Here we look for whole process compatibility by integrating automated transfection with a perfused microfluidic device designed for homogeneous culture conditions. The injection process was characterised using fluorescein to establish a LabVIEW-based routine for user-defined automation. Proof-of-concept is demonstrated by chemically transfecting a GFP plasmid into mouse embryonic stem cells (mESCs). Cells transfected in the device showed an improvement in efficiency (34%, n = 3) compared with standard protocols (17.2%, n = 3). This represents a first step towards microfluidic processing systems for cell reprogramming or gene therapy.

The role of the substrate in Graphene/Silicon photodiodes

NASA Astrophysics Data System (ADS)

Luongo, G.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A.

2018-01-01

The Graphene/Silicon (Gr/Si) junction can function as a Schottky diode with performances strictly related to the quality of the interface. Here, we focus on the substrate geometry and on its effects on Gr/Si junction physics. We fabricate and study the electrical and optical behaviour of two types of devices: one made of a Gr/Si planar junction, the second realized with graphene on an array of Si nanotips. We show that the Gr/Si flat device exhibits a reverse photocurrent higher than the forward current and achieves a photoresponsivity of 2.5 A/W. The high photoresponse is due to the charges photogenerated in Si below a parasitic graphene/SiO2/Si structure, which are injected into the Gr/Si junction region. The other device with graphene on Si-tips displays a reverse current that grows exponentially with the bias. We explain this behaviour by taking into account the tip geometry of the substrate, which magnifies the electric field and shifts the Fermi level of graphene, thus enabling fine-tuning of the Schottky barrier height. The Gr/Si-tip device achieves a higher photoresponsivity, up to 3 A/W, likely due to photocharge internal multiplication.

Morphological study of electrophoretically deposited TiO2 film for DSSC application

NASA Astrophysics Data System (ADS)

Patel, Alkesh B.; Patel, K. D.; Soni, S. S.; Sonigara, K. K.

2018-05-01

In the immerging field of eco-friendly and low cost photovoltaic devices, dye sensitized solar cell (DSSC) [1] has been investigated as promising alternative to the conventional silicon-based solar cells. In the DSSC device, photoanode is crucial component that take charge of holding sensitizer on it and inject the electrons from the sensitizer to current collector. Nanoporous TiO2 is the most relevant candidate for the preparation of photoanode in DSSCs. Surface properties, morphology, porosity and thickness of TiO2 film as well as preparation technique determine the performance of device. In the present work we have report the study of an effect of nanoporous anatase titanium dioxide (TiO2) film thickness on DSSC performance. Photoanode TiO2 (P25) film was deposited on conducting substrate by electrophoresis technique (EPD) and film thickness was controlled during deposition by applying different current density for a constant time interval. Thickness and surface morphology of prepared films was studied by SEM and transmittance analysis. The same set of photoanode was utilized in DSSC devices using metal free organic dye sensitizer to evaluate the photovoltaic performance. Devices were characterized through Current-Voltage (I-V) characteristic, electrochemical impedance spectroscopy (EIS) and open circuit voltage decay curves. Dependency of device performance corresponding to TiO2 film thickness is investigated through the lifetime kinetics of electron charge transfer mechanism trough impedance fitting. It is concluded that appropriate thickness along with uniformity and porosity are required to align the dye molecules to respond efficiently the incident light photons.

Laterally injected light-emitting diode and laser diode

DOEpatents

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin

2016-05-01

The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00505e

Contact engineering for efficient charge injection in organic transistors with low-cost metal electrodes

NASA Astrophysics Data System (ADS)

Panigrahi, D.; Kumar, S.; Dhar, A.

2017-10-01

Controlling charge injection at the metal-semiconductor interface is very crucial for organic electronic devices in general as it can significantly influence the overall device performance. Herein, we report a facile, yet efficient contact modification approach, to enhance the hole injection efficiency through the incorporation of a high vacuum deposited TPD [N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine] interlayer between the electrodes and the active semiconducting layer. The device performance parameters such as mobility and on/off ratio improved significantly after the inclusion of the TPD buffer layer, and more interestingly, the devices with cost effective Ag and Cu electrodes were able to exhibit a superior device performance than the typically used Au source-drain devices. We have also observed that this contact modification technique can be even more effective than commonly used metal oxide interface modifying layers. Our investigations demonstrate the efficacy of the TPD interlayer in effectively reducing the interfacial contact resistance through the modification of pentacene energy levels, which consequently results in the substantial improvement in the device performances.

Valley dependent transport in graphene L junction

NASA Astrophysics Data System (ADS)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Room temperature electrical spin injection into GaAs by an oxide spin injector

PubMed Central

Bhat, Shwetha G.; Kumar, P. S. Anil

2014-01-01

Spin injection, manipulation and detection are the integral parts of spintronics devices and have attracted tremendous attention in the last decade. It is necessary to judiciously choose the right combination of materials to have compatibility with the existing semiconductor technology. Conventional metallic magnets were the first choice for injecting spins into semiconductors in the past. So far there is no success in using a magnetic oxide material for spin injection, which is very important for the development of oxide based spintronics devices. Here we demonstrate the electrical spin injection from an oxide magnetic material Fe3O4, into GaAs with the help of tunnel barrier MgO at room temperature using 3-terminal Hanle measurement technique. A spin relaxation time τ ~ 0.9 ns for n-GaAs at 300 K is observed along with expected temperature dependence of τ. Spin injection using Fe3O4/MgO system is further established by injecting spins into p-GaAs and a τ of ~0.32 ns is obtained at 300 K. Enhancement of spin injection efficiency is seen with barrier thickness. In the field of spin injection and detection, our work using an oxide magnetic material establishes a good platform for the development of room temperature oxide based spintronics devices. PMID:24998440

A novel transient rotor current control scheme of a doubly-fed induction generator equipped with superconducting magnetic energy storage for voltage and frequency support

NASA Astrophysics Data System (ADS)

Shen, Yang-Wu; Ke, De-Ping; Sun, Yuan-Zhang; Daniel, Kirschen; Wang, Yi-Shen; Hu, Yuan-Chao

2015-07-01

A novel transient rotor current control scheme is proposed in this paper for a doubly-fed induction generator (DFIG) equipped with a superconducting magnetic energy storage (SMES) device to enhance its transient voltage and frequency support capacity during grid faults. The SMES connected to the DC-link capacitor of the DFIG is controlled to regulate the transient dc-link voltage so that the whole capacity of the grid side converter (GSC) is dedicated to injecting reactive power to the grid for the transient voltage support. However, the rotor-side converter (RSC) has different control tasks for different periods of the grid fault. Firstly, for Period I, the RSC injects the demagnetizing current to ensure the controllability of the rotor voltage. Then, since the dc stator flux degenerates rapidly in Period II, the required demagnetizing current is low in Period II and the RSC uses the spare capacity to additionally generate the reactive (priority) and active current so that the transient voltage capability is corroborated and the DFIG also positively responds to the system frequency dynamic at the earliest time. Finally, a small amount of demagnetizing current is provided after the fault clearance. Most of the RSC capacity is used to inject the active current to further support the frequency recovery of the system. Simulations are carried out on a simple power system with a wind farm. Comparisons with other commonly used control methods are performed to validate the proposed control method. Project supported by the National Natural Science Foundation of China (Grant No. 51307124) and the Major Program of the National Natural Science Foundation of China (Grant No. 51190105).

InGaN laser diode with metal-free laser ridge using n+-GaN contact layers

NASA Astrophysics Data System (ADS)

Malinverni, Marco; Tardy, Camille; Rossetti, Marco; Castiglia, Antonino; Duelk, Marcus; Vélez, Christian; Martin, Denis; Grandjean, Nicolas

2016-06-01

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n+-type GaN layer deposited on top of the structure. The low sheet resistance of the n+-GaN layer ensures excellent lateral current spreading, while carrier injection is confined all along the ridge thanks to current tunneling at the interface between the n+-GaN top layer and the p++-GaN layer. Continuous-wave lasing at 400 nm with an output power of 100 mW is demonstrated on uncoated facet devices with a threshold current density of 2.4 kA·cm-2.

C70/C70:pentacene/pentacene organic heterojunction as the connecting layer for high performance tandem organic light-emitting diodes: Mechanism investigation of electron injection and transport

NASA Astrophysics Data System (ADS)

Guo, Qingxun; Yang, Dezhi; Chen, Jiangshan; Qiao, Xianfeng; Ahamad, Tansir; Alshehri, Saad M.; Ma, Dongge

2017-03-01

A high performance tandem organic light-emitting diode (OLED) is realized by employing a C70/C70:pentacene/pentacene organic heterojunction as the efficient charge generation layer (CGL). Not only more than two time enhancement of external quantum efficiency but also significant improvement in both power efficiency and lifetime are well achieved. The mechanism investigations find that the electron injection from the CGL to the adjacent electron transport layer (ETL) in tandem devices is injection rate-limited due to the high interface energy barrier between the CGL and the ETL. By the capacitance-frequency (C-F) and low temperature current density-voltage (J-V) characteristic analysis, we confirm that the electron transport is a space-charge-limited current process with exponential trap distribution. These traps are localized states below the lowest unoccupied molecular orbital edge inside the gap and would be filled with the upward shift of the Fermi level during the n-doping process. Furthermore, both the trap density (Ht) and the activation energy (Ea) could be carefully worked out through low temperature J-V measurements, which is very important for developing high performance tandem OLEDs.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez-Gutierrez, Sulmer, E-mail: sulmer.a.fernandez.gutierrez@intel.com; Browning, Jim; Lin, Ming-Chieh

Phase-control of a magnetron is studied via simulation using a combination of a continuous current source and a modulated current source. The addressable, modulated current source is turned ON and OFF at the magnetron operating frequency in order to control the electron injection and the spoke phase. Prior simulation work using a 2D model of a Rising Sun magnetron showed that the use of 100% modulated current controlled the magnetron phase and allowed for dynamic phase control. In this work, the minimum fraction of modulated current source needed to achieve a phase control is studied. The current fractions (modulated versusmore » continuous) were varied from 10% modulated current to 100% modulated current to study the effects on phase control. Dynamic phase-control, stability, and start up time of the device were studied for all these cases showing that with 10% modulated current and 90% continuous current, a phase shift of 180° can be achieved demonstrating dynamic phase control.« less

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

PubMed

Feng, Chengang; Yi, Mingdong; Yu, Shunyang; Hümmelgen, Ivo A; Zhang, Tong; Ma, Dongge

2008-04-01

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Combining Upper Limb Robotic Rehabilitation with Other Therapeutic Approaches after Stroke: Current Status, Rationale, and Challenges

PubMed Central

Grosmaire, Anne Gaëlle; Battini, Elena

2017-01-01

A better understanding of the neural substrates that underlie motor recovery after stroke has led to the development of innovative rehabilitation strategies and tools that incorporate key elements of motor skill relearning, that is, intensive motor training involving goal-oriented repeated movements. Robotic devices for the upper limb are increasingly used in rehabilitation. Studies have demonstrated the effectiveness of these devices in reducing motor impairments, but less so for the improvement of upper limb function. Other studies have begun to investigate the benefits of combined approaches that target muscle function (functional electrical stimulation and botulinum toxin injections), modulate neural activity (noninvasive brain stimulation), and enhance motivation (virtual reality) in an attempt to potentialize the benefits of robot-mediated training. The aim of this paper is to overview the current status of such combined treatments and to analyze the rationale behind them. PMID:29057269

Gate-controlled electromechanical backaction induced by a quantum dot

NASA Astrophysics Data System (ADS)

Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

2016-04-01

Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

ELECTRICALLY ACTUATED, PRESSURE-DRIVEN LIQUID CHROMATOGRAPHY SEPARATIONS IN MICROFABRICATED DEVICES

PubMed Central

Fuentes, Hernan V.; Woolley, Adam T.

2012-01-01

Electrolysis-based micropumps integrated with microfluidic channels in micromachined glass substrates are presented. Photolithography combined with wet chemical etching and thermal bonding enabled the fabrication of multi-layer devices containing electrically actuated micropumps interfaced with sample and mobile phase reservoirs. A stationary phase was deposited on the microchannel walls by coating with 10% (w/w) chlorodimethyloctadecylsilane in toluene. Pressure-balanced injection was implemented by controlling the electrolysis time and voltage applied in the two independent micropumps. Current fluctuations in the micropumps due to the stochastic formation of bubbles on the electrode surfaces were determined to be the main cause of variation between separations. On-chip electrochemical pumping enabled the loading of pL samples with no dead volume between injection and separation. A mobile phase composed of 70% acetonitrile and 30% 50 mM acetate buffer (pH 5.45) was used for the chromatographic separation of three fluorescently labeled amino acids in <40 s with an efficiency of >3000 theoretical plates in a 2.5-cm-long channel. Our results demonstrate the potential of electrochemical micropumps integrated with microchannels to perform rapid chromatographic separations in a microfabricated platform. Importantly, these devices represent a significant step toward the development of miniaturized and fully integrated liquid chromatography systems. PMID:17960281

Electrically actuated, pressure-driven liquid chromatography separations in microfabricated devices.

PubMed

Fuentes, Hernan V; Woolley, Adam T

2007-11-01

Electrolysis-based micropumps integrated with microfluidic channels in micromachined glass substrates are presented. Photolithography combined with wet chemical etching and thermal bonding enabled the fabrication of multi-layer devices containing electrically actuated micropumps interfaced with sample and mobile phase reservoirs. A stationary phase was deposited on the microchannel walls by coating with 10% (w/w) chlorodimethyloctadecylsilane in toluene. Pressure-balanced injection was implemented by controlling the electrolysis time and voltage applied in the two independent micropumps. Current fluctuations in the micropumps due to the stochastic formation of bubbles on the electrode surfaces were determined to be the main cause of variation between separations. On-chip electrochemical pumping enabled the loading of pL samples with no dead volume between injection and separation. A mobile phase composed of 70% acetonitrile and 30% 50 mM acetate buffer (pH 5.45) was used for the chromatographic separation of three fluorescently labeled amino acids in <40 s with an efficiency of >3000 theoretical plates in a 2.5 cm-long channel. Our results demonstrate the potential of electrochemical micropumps integrated with microchannels to perform rapid chromatographic separations in a microfabricated platform. Importantly, these devices represent a significant step toward the development of miniaturized and fully integrated liquid chromatography systems.

Enhanced electron injection into inverted polymer light-emitting diodes by combined solution-processed zinc oxide/polyethylenimine interlayers.

PubMed

Höfle, Stefan; Schienle, Alexander; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-05-01

Inverted device architectures for organic light-emitting diodes (OLEDs) require suitable interfaces or buffer layers to enhance electron injection from highwork-function transparent electrodes. A solution-processable combination of ZnO and PEI is reported, that facilitates electron injection and enables efficient and air-stable inverted devices. Replacing the metal anode by highly conductive polymers enables transparent OLEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study of carrier-mobility of organic thin film by dark-injection time-of-flight and electric-field-induced optical second-harmonic generation measurements

NASA Astrophysics Data System (ADS)

Li, Xin; Sunaga, Masashi; Taguchi, Dai; Manaka, Takaaki; Lin, Hong; Iwamoto, Mitsumasa

2017-06-01

By using dark-injection time-of-flight (ToF) and time-resolved electric-field-induced optical second-harmonic generation (EFISHG) measurements, we studied carrier mobility μ of pentacene (Pen) thin film of ITO/Pen/Al and Au/Pen/polyimide/ITO diodes where pentacene film is ∼100 nm in thickness. ToF showed that determination of transit time tr from trace of transient currents is difficult owing to large capacitive charging current. On the other hand, optical EFISHG is free from this charging current, and allows us to calculate hole and electron mobility as μh = 1.8 ×10-4 cm2/Vs and μe = 7.6 ×10-7 cm2/Vs, respectively, by using the relation tr = d / μ ∫tc tr E (0) dt (d : Pen thickness, E (0) : electric field across Pen), instead of the conventional relationship tr =d2 / μV (V : voltage across Pen). Time-resolved EFISHG measurement is useful for the determination of carrier mobility of organic thin film in organic devices.

Electrical degradation of triarylamine-based light-emitting polymer diodes monitored by micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Ji-Seon; Ho, Peter K. H.; Murphy, Craig E.; Seeley, Alex J. A. B.; Grizzi, Ilaria; Burroughes, Jeremy H.; Friend, Richard H.

2004-03-01

Although much progress has been made in improving polymer light-emitting diode performance, there has been little work to address device intrinsic degradation mechanisms due to the challenge of tracking minute chemical reactions in the 100-nm-thick buried active layers during operation. Here we have elucidated a hole-mediated electrical degradation of triarylamine-based blue polymer diodes using in situ Raman microspectroscopy. A slow irreversible hole-doping of polymer adjacent to the hole-injecting conducting-polymer leads to formation of oxidised triarylamine species counterbalanced by anions from the conducting-polymer. These charged species act as luminescence quenchers and hinder further hole injection across the interface leading to significant decreases in current density at low voltages.

[Construction and application of an onboard absorption analyzer device for CDOM].

PubMed

Lin, Jun-Fang; Sun, Zhao-Hua; Cao, Wen-Xi; Hu, Shui-Bo; Xu, Zhan-Tang

2013-04-01

Colored dissolved organic matter (CDOM) plays an important role in marine ecosystems. In order to solve the current problems in measurement of CDOM absorption, an automated onboard analyzer based on liquid core waveguides (Teflon AF LWCC/LCW) was constructed. This analyzer has remarkable characteristics including adjusted optical pathlength, wide measurement range, and high sensitivity. The model of filtration and injection can implement the function of automated filtration, sample injection, and LWCC cleaning. The LabVIEW software platform can efficiently control the running state of the analyzer and acquire real time data including light absorption spectra, GPS data, and CTW data. By the comparison experiments and shipboard measurements, it was proved that the analyzer was reliable and robust.

Electrically injected GaAsBi/GaAs single quantum well laser diodes

NASA Astrophysics Data System (ADS)

Liu, Juanjuan; Pan, Wenwu; Wu, Xiaoyan; Cao, Chunfang; Li, Yaoyao; Chen, Xiren; Zhang, Yanchao; Wang, Lijuan; Yan, Jinyi; Zhang, Dongliang; Song, Yuxin; Shao, Jun; Wang, Shumin

2017-11-01

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.

Portable Intravenous Fluid Production Device For Ground Use Project

NASA Technical Reports Server (NTRS)

Oliva-Buisson, Yvette J.

2014-01-01

Several medical conditions require the administration of intravenous (IV) fluids,but limitations of mass, volume, shelf-life, transportation, and local resources can restrict the availability of these important fluids. Such limitations are expected in long-duration space exploration missions and in remote or austere places on Earth. This design uses regular drinking water that is pumped through two filters to produce, in minutes, sterile, ultrapure water that meets the stringent quality standards of the United States Pharmacopeia for Water for Injection (Total Bacteria, Conductivity, Endo - toxins, Total Organic Carbon). The device weighs 2.2 lb (1 kg) and is 10 in. long, 5 in. wide, and 3 in. high (˜25, 13, and 7.5 cm, respectively) in its storage configuration. This handheld device produces one liter of medical-grade water in 21 minutes. Total production capacity for this innovation is expected to be in the hundreds of liters. The device contains one battery powered electric mini-pump. Alternatively, a manually powered pump can be attached and used. Drinking water enters the device from a source water bag, flows through two filters, and final sterile production water exits into a sealed, medical-grade collection bag. The collection bag contains pre-placed crystalline salts to mix with product water to form isotonic intravenous medical solutions. Alternatively, a hypertonic salt solution can be injected into a filled bag. The filled collection bag is detached from the device and is ready for use or storage. This device currently contains one collection bag, but a manifold of several pre-attached bags or replacement of single collection bags under sterile needle technique is possible for the production of multiple liters. The entire system will be flushed, sealed, and radiation-sterilized. Operation of the device is easy and requires minimal training. Drinking water is placed into the collection bag. Inline stopcock flow valves at the source and collection bags are opened, and the mini-pump is turned on by a switch to begin fluid flow. When the collection bag is completely filled with the medical- grade water, the pump can be turned off. The pump is designed so it cannot pump air, and overfilling of the collection bag with fluid is avoided by placing an equal amount of water in the source bag. Backflow is avoided by inline check valves. The filled collection bag is disconnected from its tubing and is ready for use. The source bag can be refilled for production of multiple liters, or the source bag can be replaced with an input tube that can be placed in a larger potable water source if the device is attended. The device functions in all orientations independent of any gravity fields. In addition to creating IV fluids, the device produces medical-grade water, which can be used for mixing with medications for injection, reconstituting freeze-dried blood products for injection, or for wound hydration or irrigation. Potential worldwide use is expected with medical activities in environments that have limited resources, storage, or resupply such as in military field operations, humanitarian relief efforts, submarines, commercial cruise ships, etc.

Devices for monitoring content of microparticles and bacterium in injection solutions in pharmaceutical production

NASA Astrophysics Data System (ADS)

Bilyi, Olexander I.; Getman, Vasyl B.; Konyev, Fedir A.; Sapunkov, Olexander; Sapunkov, Pavlo G.

2001-06-01

The devices for monitoring of parameters of efficiency of water solutions filtration, which are based on the analysis of scattered light by microparticles are considered in this article. The efficiency of using of devices in pharmaceutics in technological processes of manufacturing medical injection solutions is shown. The examples of monitoring of contents of bacterial cultures Pseudomonas aeruginosa, Escherichia coli, and Micrococcus luteus in water solutions of glucose are indicated.

Spin injection into silicon in three-terminal vertical and four-terminal lateral devices with Fe/Mg/MgO/Si tunnel junctions having an ultrathin Mg insertion layer

NASA Astrophysics Data System (ADS)

Sato, Shoichi; Nakane, Ryosho; Hada, Takato; Tanaka, Masaaki

2017-12-01

We demonstrate that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (⩽2 nm) in Fe /Mg /MgO /n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observe the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si and estimate the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal is observed without the Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of a magnetically dead layer at the Fe/MgO interface. We also observe clear spin transport signals, such as nonlocal Hanle signals and spin-valve signals, in a lateral four-terminal device with the same Fe /Mg /MgO /n+-Si tunnel junctions fabricated on a Si-on-insulator substrate. It is found that both the intensity and linewidth of the spin signals are affected by the geometrical effects (device geometry and size). We have derived analytical functions taking into account the device structures, including channel thickness and electrode size, and estimated important parameters: spin lifetime and spin polarization. Our analytical functions explain the experimental results very well. Our study shows the importance of suppressing a magnetically dead layer and provides a unified understanding of spin injection/detection signals in different device geometries.

Single nanowire green InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

2016-10-01

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes.

PubMed

Fragkos, Ioannis E; Dierolf, Volkmar; Fujiwara, Yasufumi; Tansu, Nelson

2017-12-01

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu +3 ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu +3 ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters.

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

NASA Astrophysics Data System (ADS)

Chen, Chun-Yen; Chen, Wei-Cheng; Chang, Ching-Hong; Lee, Yu-Lin; Liu, Wen-Chau

2018-05-01

Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15-90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

HgCdTe 256x256 NWIR FPA

NASA Technical Reports Server (NTRS)

Vural, Kadri; Blessinger, Michael; Chen, Jenkon; Kleinhans, William

1989-01-01

Researchers developed a HgCdTe 256x256 focal plane array (FPA) which operates in the 1 to 5 micron band. This is presently the largest demonstrated HgCdTe FPA. The detector material is HgCdTe on sapphire (PACE-1 technology) which has a low thermal expansion mismatch with silicon. The multiplexer is a CMOS FET-switch device processed through a commercial silicon foundry. The multiplexer input is direct injection and the charge capacity is about 2 times 10 to the 7th power electrons. The kTC limited read noise is 400 electrons. Researchers demonstrated high background imaging using the device. The broadband quantum efficiency is measured to be 59 percent. Dark currents less than 0.1 pA were measured at 77 K for detectors processed on PACE-1 material with 4.9 microns cutoff. The dark currents decrease as the temperature is lowered, and researchers are presently studying the T less than 77 K characteristics. The interconnect yield is greater than 95 percent. The devices are available for astronomical applications.

Injection locking at 2f of spin torque oscillators under influence of thermal noise.

PubMed

Tortarolo, M; Lacoste, B; Hem, J; Dieudonné, C; Cyrille, M-C; Katine, J A; Mauri, D; Zeltser, A; Buda-Prejbeanu, L D; Ebels, U

2018-01-29

Integration of Spin Torque Nano-Oscillators STNO's in conventional microwave circuits means that the devices have to meet certain specifications. One of the most important criteria is the phase noise, being the key parameter to evaluate the performance and define possible applications. Phase locking several oscillators together has been suggested as a possible means to decrease phase noise and consequently, the linewidth. In this work we present experiments, numerical simulations and an analytic model to describe the effects of thermal noise in the injection locking of a tunnel junction based STNO. The analytics show the relation of the intrinsic parameters of the STNO with the phase noise level, opening the path to tailor the spectral characteristics by the magnetic configuration. Experiments and simulations demonstrate that in the in-plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Moreover, our analysis shows that it is possible to control the phase noise by the reference microwave current (I RF ) and that it can be further reduced by increasing the bias current (I DC ) of the oscillator, keeping the reference current in feasible limits for applications.

Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications

PubMed Central

2012-01-01

The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device. PMID:23009105

Imaging magnetisation dynamics in nano-contact spin-torque vortex oscillators exhibiting gyrotropic mode splitting

NASA Astrophysics Data System (ADS)

Keatley, Paul Steven; Redjai Sani, Sohrab; Hrkac, Gino; Majid Mohseni, Seyed; Dürrenfeld, Philipp; Åkerman, Johan; Hicken, Robert James

2017-04-01

Nano-contact spin-torque vortex oscillators (STVOs) are anticipated to find application as nanoscale sources of microwave emission in future technological applications. Presently the output power and phase stability of individual STVOs are not competitive with existing oscillator technologies. Synchronisation of multiple nano-contact STVOs via magnetisation dynamics has been proposed to enhance the microwave emission. The control of device-to-device variations, such as mode splitting of the microwave emission, is essential if multiple STVOs are to be successfully synchronised. In this work a combination of electrical measurements and time-resolved scanning Kerr microscopy (TRSKM) was used to demonstrate how mode splitting in the microwave emission of STVOs was related to the magnetisation dynamics that are generated. The free-running STVO response to a DC current only was used to identify devices and bias magnetic field configurations for which single and multiple modes of microwave emission were observed. Stroboscopic Kerr images were acquired by injecting a small amplitude RF current to phase lock the free-running STVO response. The images showed that the magnetisation dynamics of a multimode device with moderate splitting could be controlled by the injected RF current so that they exhibit similar spatial character to that of a single mode. Significant splitting was found to result from a complicated equilibrium magnetic state that was observed in Kerr images as irregular spatial characteristics of the magnetisation dynamics. Such dynamics were observed far from the nano-contact and so their presence cannot be detected in electrical measurements. This work demonstrates that TRSKM is a powerful tool for the direct observation of the magnetisation dynamics generated by STVOs that exhibit complicated microwave emission. Characterisation of such dynamics outside the nano-contact perimeter permits a deeper insight into the requirements for optimal phase-locking of multiple STVOs that share common magnetic layers. , which features invited work from the best early-career researchers working within the scope of J. Phys. D. This project is part of the Journal of Physics series' 50th anniversary celebrations in 2017. Paul Keatley was selected by the Editorial Board of J. Phys. D as an Emerging Leader.

Facile solution-processed aqueous MoOx for feasible application in organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zheng, Qinghong; Qu, Disui; Zhang, Yan; Li, Wanshu; Xiong, Jian; Cai, Ping; Xue, Xiaogang; Liu, Liming; Wang, Honghang; Zhang, Xiaowen

2018-05-01

Solution-processed techniques attract increasing attentions in organic electronics for their low-cost and scalable manufacturing. We demonstrate the favorite hole injection material of solution-processed aqueous MoOx (s-MoOx) with facile fabrication process and cast successful application to constructing efficient organic light-emitting diodes (OLEDs). Atomic force microscopy and X-ray photoelectron spectroscopy analysis show that s-MoOx behaves superior film morphology and non-stoichiometry with slight oxygen deficiency. With tris(8-hydroxy-quinolinato)aluminium as emitting layer, s-MoOx based OLED shows maximum luminous efficiency of 7.9 cd/A and power efficiency of 5.9 lm/W, which have been enhanced by 43.6% and 73.5%, respectively, in comparison with the counterpart using conventional vacuum thermal evaporation MoOx. Current-voltage, impedance-voltage, phase-voltage and capacitance-voltage characteristics of hole-only devices indicate that s-MoOx with two processes of "spin-coating/annealing" shows mostly enhanced hole injection capacity and thus promoting device performance. Our experiments provide an alternative approach for constructing efficient OLED with solution process.

Improved charge injection device and a focal plane interface electronics board for stellar tracking

NASA Technical Reports Server (NTRS)

Michon, G. J.; Burke, H. K.

1984-01-01

An improved Charge Injection Device (CID) stellar tracking sensor and an operating sensor in a control/readout electronics board were developed. The sensor consists of a shift register scanned, 256x256 CID array organized for readout of 4x4 subarrays. The 4x4 subarrays can be positioned anywhere within the 256x256 array with a 2 pixel resolution. This allows continuous tracking of a number of stars simultaneously since nine pixels (3x3) centered on any star can always be read out. Organization and operation of this sensor and the improvements in design and semiconductor processing are described. A hermetic package incorporating an internal thermoelectric cooler assembled using low temperature solders was developed. The electronics board, which contains the sensor drivers, amplifiers, sample hold circuits, multiplexer, analog to digital converter, and the sensor temperature control circuits, is also described. Packaged sensors were evaluated for readout efficiency, spectral quantum efficiency, temporal noise, fixed pattern noise, and dark current. Eight sensors along with two tracker electronics boards were completed, evaluated, and delivered.

Advanced processing methods to introduce and preserve dipole orientation in organic electro-optic materials for next generation photonic devices

NASA Astrophysics Data System (ADS)

Huang, Su

Organic electro-optic (E-O) materials have attracted considerable research attention in the past 20 years due to their rising potentials in a lot of novel photonic applications, such as high-speed telecommunication, terahertz generation and ultra-fast optical interconnections. Chapter 2 of this dissertation focuses on a barrier layer approach to improve the poling efficiency of electro-optic polymers. First of all, high conduction current from excessive charge injection is identified as a fundamental challenge of effective poling. After analyzing the conduction mechanism, we introduce a sol-gel derived thin titanium dioxide (TiO2) layer that can significantly block excessive charge injection and reduce the leakage current during high field poling. Ultralarge E-O coefficients, up to 160-350 pm/V at 1310 nm have been achieved by poling with such a barrier, which are 26%-40% higher than the results poled without such a TiO2 layer. This enhancement is explained by the suppressed charge injection and space charge accumulation by the insertion of the high injection barrier from the TiO2 barrier layer. In Chapter 3, the impact of the inserted barrier layer on the temporal alignment stability of E-O polymers is discussed. Considerable stability enhancement is confirmed using both standard 500-hour temporal alignment stability test at 85 °C and thermally stimulated discharge method. We suggest that the enhancement comes from improved stability of the screening charge. During poling the additional barrier layer helps to lower the injection and thus the space charge accumulation. And this reduced space charge accumulation further helps to replace the space charge part in the total formulation of screening charge with more stable interface trapped charge. We thus expand this knowledge to a group of other materials that can also block excessive charge injection and suppressed space charge accumulation, including dielectric polymers polyvinyl alcohol (PVA), poly(4-vinylphenol) (PVP) and TOPAS as well as ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE), 65/35 copolymer), which differ largely from the others in dielectric constant, conductivity and surface properties. The only common feature of them is that they all lowered the charge injection and leakage current for 1-2 orders during poling. On every buffer layer we tried, similar trend of stability enhancement is found. These results suggest that the observed temporal stability enhancement is indeed an effect from the abovementioned mechanism. Chapter 4 focuses on the development of an innovative new poling method, which utilizes pyroelectric effect instead of external power sources to overcome the limitations of conventional contact poling and corona poling. With careful theory assisted design, we developed a reliable protocol to efficiently introduce dipole orientation in organic E-O materials by heating and cooling them with detachable pyroelectric crystals. This new method can potentially improve the process adaptability of organic E-O materials in a variety of photonic devices. Large Pockels coefficients (up to 81 pm/V at 1.3 micron) have been successfully achieved in thin films poled using this method. The effective fields in these experiments are estimated to be around 0.5 to 0.9 MV/cm, which agree well with the electrostatics analysis using an idealized model. The same method is directly applied to surface modified hybrid polymer silicon slot waveguide ring-resonator modulators devices. A 25 pm/V tunability of resonance peak wavelength shift has been realized, which was higher than any reported results in similar devices. Chapter 5 discusses about the possible application of the pyroelectric poling in a multi-stack waveguide device architecture. A long-existing challenge to pole E-O polymer based photonic devices is how to effectively drop the poling voltage to the core layer, which is usually sandwiched between two dielectric claddings. In the past, this was done by using relatively conductive claddings, which on the other hand can bring larger optical loss and dielectric loss to the waveguide. Thus careful engineering compromise must be made between better poling efficiency and lower loss. Pyroelectric poling as discussed in Chapter 4 opens up new possibilities. In this chapter, it is demonstrated that E-O polymer films can be poled even with 3 orders thicker dielectric layer in circuit using pyroelectric poling. The theoretical analysis matches well with the experimental results. (Abstract shortened by UMI.).

Intra-articular collagenase injection increases range of motion in a rat knee flexion contracture model

PubMed Central

Wong, Kayleigh; Trudel, Guy; Laneuville, Odette

2018-01-01

Objectives A knee joint contracture, a loss in passive range of motion (ROM), can be caused by prolonged immobility. In a rat knee immobilization flexion contracture model, the posterior capsule was shown to contribute to an irreversible limitation in ROM, and collagen pathways were identified as differentially expressed over the development of a contracture. Collagenases purified from Clostridium histolyticum are currently prescribed to treat Dupuytren’s and Peyronie’s contractures due to their ability to degrade collagen. The potential application of collagenases to target collagen in the posterior capsule was tested in this model. Materials and methods Rats had one hind leg immobilized, developing a knee flexion contracture. After 4 weeks, the immobilization device was removed, and the rats received one 50 µL intra-articular injection of 0.6 mg/mL purified collagenase. Control rats were injected with only the buffer. After 2 weeks of spontaneous remobilization following the injections, ROM was measured with a rat knee arthrometer, and histological sections were immunostained with antibodies against rat collagen types I and III. Results/conclusion Compared with buffer-injected control knees, collagenase-treated knees showed increased ROM in extension by 8.0°±3.8° (p-value <0.05). Immunohistochemical analysis revealed an increase in collagen type III staining (p<0.01) in the posterior capsule of collagenase-treated knees indicating an effect on the extracellular matrix due to the collagenase. Collagen I staining was unchanged (p>0.05). The current study provides experimental evidence for the pharmacological treatment of knee flexion contractures with intra-articular collagenase injection, improving the knee ROM. PMID:29317799

Electron Injection by E-Field Drift and its Application in Starting-up Tokamaks at Low Loop Voltage

NASA Astrophysics Data System (ADS)

Pan, Yuan; Yan, Xiao-Lin; Liu, Bao-Hua

2003-05-01

We propose an innovative method of electron injection by E-field drift into a plasma device and discuss its application in starting-up tokamak plasmas at low loop voltage. The experimental results obtained from HT-6M Tokamak are also presented. The breakdown loop voltage is obviously reduced and the discharge performance is improved by using the electron injection method. It could be applied to some other types of plasma device.

Evaluation of Operator Radioprotection Using a New Injection Device during Vertebroplasty

PubMed Central

Nguyen-Kim, L.; Fargeot, C.; Beaussier, H.; Payen, S.; Chiras, J.

2013-01-01

Summary This study aimed to evaluate the protection granted by a simple device (X'TENS®, Thiebaud, France) and to provide operators with information on the performance of this new device, which has not yet been assessed. Our assumption is that this device efficiently reduces the radiation dose to the operator. In a prospective clinical study, the radiation dose the operator's hand receives has been assessed using a specific sensor (UNFOR Instrument). Each patient included in the study was to receive at least two injections of cement during the procedure. Exposure was measured with and without the range extender. The data collected were then processed using a Wilcoxon matched pairs test. During 14 interventions, 20 vertebrae were treated with both procedures. Eleven women and three men were included. Seven patients underwent vertebroplasty for metastatic lesions and seven for osteoporotic lesions, bone fractures or vertebral compressions. The average injection time was 1.35 minutes with the device and 1.20 without (p=0.75). The dose to the hand per ml injected was 111.37 vs. 166.91 (p<0.05). Theoretically, the protection granted by the range extender depends on the length of the device. Our results are consistent with the inverse-square law. However, the variations in our results indicate that a proper and rigorous use is mandatory for the device to be effective. Given that radioprotection during fluoroscopy procedures is a frequently raised issue, the need for information for a safer practice increases likewise. PMID:23693040

Evaluation of operator radioprotection using a new injection device during vertebroplasty.

PubMed

Nguyen-Kim, L; Fargeot, C; Beaussier, H; Payen, S; Chiras, J

2013-06-01

This study aimed to evaluate the protection granted by a simple device (X'TENS(®), Thiebaud, France) and to provide operators with information on the performance of this new device, which has not yet been assessed. Our assumption is that this device efficiently reduces the radiation dose to the operator. In a prospective clinical study, the radiation dose the operator's hand receives has been assessed using a specific sensor (UNFOR Instrument). Each patient included in the study was to receive at least two injections of cement during the procedure. Exposure was measured with and without the range extender. The data collected were then processed using a Wilcoxon matched pairs test. During 14 interventions, 20 vertebrae were treated with both procedures. Eleven women and three men were included. Seven patients underwent vertebroplasty for metastatic lesions and seven for osteoporotic lesions, bone fractures or vertebral compressions. The average injection time was 1.35 minutes with the device and 1.20 without (p=0.75). The dose to the hand per ml injected was 111.37 vs. 166.91 (p<0.05). Theoretically, the protection granted by the range extender depends on the length of the device. Our results are consistent with the inverse-square law. However, the variations in our results indicate that a proper and rigorous use is mandatory for the device to be effective. Given that radioprotection during fluoroscopy procedures is a frequently raised issue, the need for information for a safer practice increases likewise.

Meeting Future C3I (Command-Control-Communications-Intelligence) Needs with Fiber Optics,

DTIC Science & Technology

1985-05-01

Frequency dependence of the sensitivity of fibers with hard coatings is relatively small. Nylon gives the weakest dependence, while the soft UV -cured...elastomer gives the strongest. Maximum sensitivity is obtained with Teflon TFE, while the minimum is achieved with the soft UV coating. With the latter...fiber-optics systems: the LED (Light Emitting Diode) and ILD (Injection Laser Diode). These devices emit light when an electric current is applied. The

Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection

NASA Astrophysics Data System (ADS)

Wang, Jian-Jun; Bayer, Thorsten J. M.; Wang, Rui; Carter, Jared J.; Randall, Clive A.; Chen, Long-Qing

2017-06-01

Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO3 single crystal is investigated with a combination of experimental impedance measurements and computational modelling. It is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering.

Studies in fat grafting: Part I. Effects of injection technique on in vitro fat viability and in vivo volume retention.

PubMed

Chung, Michael T; Paik, Kevin J; Atashroo, David A; Hyun, Jeong S; McArdle, Adrian; Senarath-Yapa, Kshemendra; Zielins, Elizabeth R; Tevlin, Ruth; Duldulao, Chris; Hu, Michael S; Walmsley, Graham G; Parisi-Amon, Andreina; Momeni, Arash; Rimsa, Joe R; Commons, George W; Gurtner, Geoffrey C; Wan, Derrick C; Longaker, Michael T

2014-07-01

Fat grafting has become increasingly popular for the correction of soft-tissue deficits at many sites throughout the body. Long-term outcomes, however, depend on delivery of fat in the least traumatic fashion to optimize viability of the transplanted tissue. In this study, the authors compare the biological properties of fat following injection using two methods. Lipoaspiration samples were obtained from five female donors, and cellular viability, proliferation, and lipolysis were evaluated following injection using either a modified Coleman technique or an automated, low-shear device. Comparisons were made to minimally processed, uninjected fat. Volume retention was also measured over 12 weeks after injection of fat under the scalp of immunodeficient mice using either the modified Coleman technique or the Adipose Tissue Injector. Finally, fat grafts were analyzed histologically. Fat viability and cellular proliferation were both significantly greater with the Adipose Tissue Injector relative to injection with the modified Coleman technique. In contrast, significantly less lipolysis was noted using the automated device. In vivo fat volume retention was significantly greater than with the modified Coleman technique at the 4-, 6-, 8-, and 12-week time points. This corresponded to significantly greater histologic scores for healthy fat and lower scores for injury following injection with the device. Biological properties of injected tissues reflect how disruptive and harmful techniques for placement of fat may be, and the authors' in vitro and in vivo data both support the use of the automated, low-shear devices compared with the modified Coleman technique.

Studies in Fat Grafting: Part I. Effects of Injection Technique on in vitro Fat Viability and in vivo Volume Retention

PubMed Central

Chung, Michael T.; Paik, Kevin J.; Atashroo, David A.; Hyun, Jeong S.; McArdle, Adrian; Senarath-Yapa, Kshemendra; Zielins, Elizabeth R.; Tevlin, Ruth; Duldulao, Chris; Hu, Michael S.; Walmsley, Graham G.; Parisi-Amon, Andreina; Momeni, Arash; Rimsa, Joe R.; Commons, George W.; Gurtner, Geoffrey C.; Wan, Derrick C.; Longaker, Michael T.

2014-01-01

Background Fat grafting has become increasingly popular for the correction of soft tissue deficits at many sites throughout the body. Long-term outcomes, however, depend on delivery of fat in the least traumatic fashion to optimize viability of the transplanted tissue. In this study, we compare the biologic properties of fat following injection using two methods. Methods Lipoaspiration samples were obtained from five female donors and cellular viability, proliferation, and lipolysis were evaluated following injection using either a modified Coleman technique or an automated, low shear device. Comparisons were made to minimally processed, uninjected fat. Volume retention was also measured over twelve weeks following injection of fat under the scalp of immunodeficient mice using either the modified Coleman technique or the Adipose Tissue Injector. Finally, fat grafts were analyzed histologically. Results Fat viability and cellular proliferation were both significantly greater with the Adipose Tissue Injector relative to injection with the modified Coleman technique. In contrast, significantly less lipolysis was noted using the automated device. In vivo fat volume retention was significantly greater than with the modified Coleman technique at 4, 6, 8, and 12 week time points. This corresponded with significantly greater histological scores for healthy fat and lower scores for injury following injection with the device. Conclusions Biological properties of injected tissues reflect how disruptive and harmful techniques for placement of fat may be, and our in vitro and in vivo data both support the use of the automated, low shear devices compared to the modified Coleman technique. PMID:24622574

Energy efficient hybrid computing systems using spin devices

NASA Astrophysics Data System (ADS)

Sharad, Mrigank

Emerging spin-devices like magnetic tunnel junctions (MTJ's), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ˜20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode' processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ˜100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters.

An injection and mixing element for delivery and monitoring of inhaled nitric oxide.

PubMed

Martin, Andrew R; Jackson, Chris; Fromont, Samuel; Pont, Chloe; Katz, Ira M; Caillobotte, Georges

2016-08-30

Inhaled nitric oxide (NO) is a selective pulmonary vasodilator used primarily in the critical care setting for patients concurrently supported by invasive or noninvasive positive pressure ventilation. NO delivery devices interface with ventilator breathing circuits to inject NO in proportion with the flow of air/oxygen through the circuit, in order to maintain a constant, target concentration of inhaled NO. In the present article, a NO injection and mixing element is presented. The device borrows from the design of static elements to promote rapid mixing of injected NO-containing gas with breathing circuit gases. Bench experiments are reported to demonstrate the improved mixing afforded by the injection and mixing element, as compared with conventional breathing circuit adapters, for NO injection into breathing circuits. Computational fluid dynamics simulations are also presented to illustrate mixing patterns and nitrogen dioxide production within the element. Over the range of air flow rates and target NO concentrations investigated, mixing length, defined as the downstream distance required for NO concentration to reach within ±5 % of the target concentration, was as high as 47 cm for the conventional breathing circuit adapters, but did not exceed 7.8 cm for the injection and mixing element. The injection and mixing element has potential to improve ease of use, compatibility and safety of inhaled NO administration with mechanical ventilators and gas delivery devices.

Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

NASA Astrophysics Data System (ADS)

Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

2013-04-01

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

Needle-free injection of insulin powder: delivery efficiency and skin irritation assessment.

PubMed

Li, Chun-yu; Wang, Zhe-wei; Tu, Can; Wang, Jia-bo; Jiang, Bing-qian; Li, Qi; Zeng, Ling-na; Ma, Zhi-jie; Zhang, Ping; Zhao, Yan-ling; Zhang, Ya-ming; Yan, Dan; Tan, Rui; Xiao, Xiao-he

2014-10-01

Insulin is widely used in treating diabetes, but still needs to be administered by needle injection. This study investigated a new needle-free approach for insulin delivery. A portable powder needleless injection (PNI) device with an automatic mechanical unit was designed. Its efficiency in delivering insulin was evaluated in alloxan-induced diabetic rabbits. The skin irritation caused by the device was investigated and the results were analyzed in relation to aerodynamic parameters. Inorganic salt-carried insulin powders had hypoglycemic effects, while raw insulin powders were not effective when delivered by PNI, indicating that salt carriers play an important role in the delivery of insulin via PNI. The relative delivery efficiency of phosphate-carried insulin powder using the PNI device was 72.25%. A safety assessment test showed that three key factors (gas pressure, cylinder volume, and nozzle distance) were related to the amount of skin irritation caused by the PNI device. Optimized injection conditions caused minimal skin lesions and are safe to use in practice. The results suggest that PNI has promising prospects as a novel technology for delivering insulin and other biological drugs.

Needle-free injection of insulin powder: delivery efficiency and skin irritation assessment*

PubMed Central

Li, Chun-yu; Wang, Zhe-wei; Tu, Can; Wang, Jia-bo; Jiang, Bing-qian; Li, Qi; Zeng, Ling-na; Ma, Zhi-jie; Zhang, Ping; Zhao, Yan-ling; Zhang, Ya-ming; Yan, Dan; Tan, Rui; Xiao, Xiao-he

2014-01-01

Insulin is widely used in treating diabetes, but still needs to be administered by needle injection. This study investigated a new needle-free approach for insulin delivery. A portable powder needleless injection (PNI) device with an automatic mechanical unit was designed. Its efficiency in delivering insulin was evaluated in alloxan-induced diabetic rabbits. The skin irritation caused by the device was investigated and the results were analyzed in relation to aerodynamic parameters. Inorganic salt-carried insulin powders had hypoglycemic effects, while raw insulin powders were not effective when delivered by PNI, indicating that salt carriers play an important role in the delivery of insulin via PNI. The relative delivery efficiency of phosphate-carried insulin powder using the PNI device was 72.25%. A safety assessment test showed that three key factors (gas pressure, cylinder volume, and nozzle distance) were related to the amount of skin irritation caused by the PNI device. Optimized injection conditions caused minimal skin lesions and are safe to use in practice. The results suggest that PNI has promising prospects as a novel technology for delivering insulin and other biological drugs. PMID:25294378

Improving the performance of doped pi-conjugated polymers for use in organic light-emitting diodes

PubMed

Gross; Muller; Nothofer; Scherf; Neher; Brauchle; Meerholz

2000-06-08

Organic light-emitting diodes (OLEDs) represent a promising technology for large, flexible, lightweight, flat-panel displays. Such devices consist of one or several semiconducting organic layer(s) sandwiched between two electrodes. When an electric field is applied, electrons are injected by the cathode into the lowest unoccupied molecular orbital of the adjacent molecules (simultaneously, holes are injected by the anode into the highest occupied molecular orbital). The two types of carriers migrate towards each other and a fraction of them recombine to form excitons, some of which decay radiatively to the ground state by spontaneous emission. Doped pi-conjugated polymer layers improve the injection of holes in OLED devices; this is thought to result from the more favourable work function of these injection layers compared with the more commonly used layer material (indium tin oxide). Here we demonstrate that by increasing the doping level of such polymers, the barrier to hole injection can be continuously reduced. The use of combinatorial devices allows us to quickly screen for the optimum doping level. We apply this concept in OLED devices with hole-limited electroluminescence (such as polyfluorene-based systems), finding that it is possible to significantly reduce the operating voltage while improving the light output and efficiency.

Investigating skin penetration depth and shape following needle-free injection at different pressures: A cadaveric study.

PubMed

Seok, Joon; Oh, Chang Taek; Kwon, Hyun Jung; Kwon, Tae Rin; Choi, Eun Ja; Choi, Sun Young; Mun, Seog Kyun; Han, Seung-Ho; Kim, Beom Joon; Kim, Myeung Nam

2016-08-01

The effectiveness of needle-free injection devices in neocollagenesis for treating extended skin planes is an area of active research. It is anticipated that needle-free injection systems will not only be used to inject vaccines or insulin, but will also greatly aid skin rejuvenation when used to inject aesthetic materials such as hyaluronic acid, botulinum toxin, and placental extracts. There has not been any specific research to date examining how materials penetrate the skin when a needle-free injection device is used. In this study, we investigated how material infiltrates the skin when it is injected into a cadaver using a needle-free device. Using a needle-free injector (INNOJECTOR™; Amore Pacific, Seoul, Korea), 0.2 ml of 5% methylene blue (MB) or latex was injected into cheeks of human cadavers. The device has a nozzle diameter of 100 µm and produces a jet with velocity of 180 m/s. This jet penetrates the skin and delivers medicine intradermally via liquid propelled by compressed gasses. Materials were injected at pressures of 6 or 8.5 bars, and the injection areas were excised after the procedure. The excised areas were observed visually and with a phototrichogram to investigate the size, infiltration depth, and shape of the hole created on the skin. A small part of the area that was excised was magnified and stained with H&E (×40) for histological examination. We characterized the shape, size, and depth of skin infiltration following injection of 5% MB or latex into cadaver cheeks using a needle-free injection device at various pressure settings. Under visual inspection, the injection at 6 bars created semi-circle-shaped hole that penetrated half the depth of the excised tissue, while injection at 8.5 bars created a cylinder-shaped hole that spanned the entire depth of the excised tissue. More specific measurements were collected using phototrichogram imaging. The shape of the injection entry point was consistently spherical regardless of the amount of pressure used. When injecting 5% MB at 6 bars, the depth of infiltration reached 2.323 mm, while that at 8.5 bars reached 8.906 mm. The area of the hole created by the 5% MB injection was 0.797 mm(2) at 6 bars and 0.242 mm(2) at 8.5 bars. Latex injections reached a depth of 3.480 mm at 6 bars and 7.558 mm at 8.5 bars, and the areas were measured at 1.043 mm(2) (6 bars) and 0.355 mm(2) (8.5 bars). Histological examination showed that the injection penetrated as deep as the superficial musculoaponeurotic system at 6 bars and the masseter muscle at 8.5 bars. When injecting material into the skin using a pneumatic needle-free injector, higher-pressure injections result in a hole with smaller area than lower-pressure injections. The depth and shape of skin penetration vary according to the amount of pressure applied. For materials of low density and viscosity, there is a greater difference in penetration depth according to the degree of pressure. Lasers Surg. Med. 48:624-628, 2016. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

Needle-free delivery of macromolecules through the skin using controllable jet injectors.

PubMed

Hogan, Nora C; Taberner, Andrew J; Jones, Lynette A; Hunter, Ian W

2015-01-01

Transdermal delivery of drugs has a number of advantages in comparison to other routes of administration. The mechanical properties of skin, however, impose a barrier to administration and so most compounds are administered using hypodermic needles and syringes. In order to overcome some of the issues associated with the use of needles, a variety of non-needle devices based on jet injection technology has been developed. Jet injection has been used primarily for vaccine administration but has also been used to deliver macromolecules such as hormones, monoclonal antibodies and nucleic acids. A critical component in the more recent success of jet injection technology has been the active control of pressure applied to the drug during the time course of injection. Jet injection systems that are electronically controllable and reversible offer significant advantages over conventional injection systems. These devices can consistently create the high pressures and jet speeds necessary to penetrate tissue and then transition smoothly to a lower jet speed for delivery of the remainder of the desired dose. It seems likely that in the future this work will result in smart drug delivery systems incorporated into personal medical devices and medical robots for in-home disease management and healthcare.

Exploration of spherical torus physics in the NSTX device

NASA Astrophysics Data System (ADS)

Ono, M.; Kaye, S. M.; Peng, Y.-K. M.; Barnes, G.; Blanchard, W.; Carter, M. D.; Chrzanowski, J.; Dudek, L.; Ewig, R.; Gates, D.; Hatcher, R. E.; Jarboe, T.; Jardin, S. C.; Johnson, D.; Kaita, R.; Kalish, M.; Kessel, C. E.; Kugel, H. W.; Maingi, R.; Majeski, R.; Manickam, J.; McCormack, B.; Menard, J.; Mueller, D.; Nelson, B. A.; Nelson, B. E.; Neumeyer, C.; Oliaro, G.; Paoletti, F.; Parsells, R.; Perry, E.; Pomphrey, N.; Ramakrishnan, S.; Raman, R.; Rewoldt, G.; Robinson, J.; Roquemore, A. L.; Ryan, P.; Sabbagh, S.; Swain, D.; Synakowski, E. J.; Viola, M.; Williams, M.; Wilson, J. R.; NSTX Team

2000-03-01

The National Spherical Torus Experiment (NSTX) is being built at Princeton Plasma Physics Laboratory to test the fusion physics principles for the spherical torus concept at the MA level. The NSTX nominal plasma parameters are R0 = 85 cm, a = 67 cm, R/a >= 1.26, Bt = 3 kG, Ip = 1 MA, q95 = 14, elongation κ <= 2.2, triangularity δ <= 0.5 and a plasma pulse length of up to 5 s. The plasma heating/current drive tools are high harmonic fast wave (6 MW, 5 s), neutral beam injection (5 MW, 80 keV, 5 s) and coaxial helicity injection. Theoretical calculations predict that NSTX should provide exciting possibilities for exploring a number of important new physics regimes, including very high plasma β, naturally high plasma elongation, high bootstrap current fraction, absolute magnetic well and high pressure driven sheared flow. In addition, the NSTX programme plans to explore fully non-inductive plasma startup as well as a dispersive scrape-off layer for heat and particle flux handling.

Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

DOE PAGES

Fleming, R. M.; Seager, C. H.; Lang, D. V.; ...

2015-07-02

In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V 2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range ofmore » capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.« less

Highly Efficient and Fully Solution-Processed Inverted Light-Emitting Diodes with Charge Control Interlayers.

PubMed

Fu, Yan; Jiang, Wei; Kim, Daekyoung; Lee, Woosuk; Chae, Heeyeop

2018-05-23

In this work, we developed a charge control sandwich structure around QD layers for the inverted QLEDs, the performance of which is shown to exceed that of the conventional QLEDs in terms of the external quantum efficiency (EQE) and the current efficiency (CE). The QD light-emitting layer (EML) is sandwiched with two ultrathin interfacial layers: one is a poly(9-vinlycarbazole) (PVK) layer to prevent excess electrons, and the other is a polyethylenimine ethoxylated (PEIE) layer to reduce the hole injection barrier. The sandwich structure resolves the imbalance between injected holes and electrons and brings the level of balanced charge carriers to a maximum. We demonstrated the highly improved performance of 89.8 cd/A of current efficiency, 22.4% of external quantum efficiency, and 72 814 cd m -2 of maximum brightness with the solution-processed inverted QLED. This sandwich structure (PVK/QD/PEIE), as a framework, can be applied to various QLED devices for enhancing performance.

Novel Method to Detect and Characterize 18F-FDG Infiltration at the Injection Site: A Single-Institution Experience.

PubMed

Muzaffar, Razi; Frye, Sarah A; McMunn, Anna; Ryan, Kelley; Lattanze, Ron; Osman, Medhat M

2017-12-01

A novel quality control and quality assurance device provides time-activity curves that can identify and characterize PET/CT radiotracer infiltration at the injection site during the uptake phase. The purpose of this study was to compare rates of infiltration detected by the device with rates detected by physicians. We also assessed the value of using the device to improve injection results in our center. Methods: 109 subjects consented to the study. All had passive device sensors applied to their skin near the injection site and mirrored on the contralateral arm during the entire uptake period. Nuclear medicine physicians reviewed standard images for the presence of dose infiltration. Sensor-generated time-activity curves were independently examined and then compared with the physician reports. Injection data captured by the software were analyzed, and the results were provided to the technologists. Improvement measures were implemented, and rates were remeasured. Results: Physician review of the initial 40 head-to-toe field-of-view images identified 15 cases (38%) of dose infiltration (9 minor, 5 moderate, and 1 significant). Sensor time-activity curves on these 40 cases independently identified 22 cases (55%) of dose infiltration (16 minor, 5 moderate, and 1 significant). After the time-activity curve results and the contributing factor analysis were shared with technologists, injection techniques were modified and an additional 69 cases were studied. Of these, physician review identified 17 cases (25%) of infiltration (13 minor, 3 moderate, and 1 significant), a 34% decline. Sensor time-activity curves identified 4 cases (6%) of infiltration (2 minor and 2 moderate), an 89% decline. Conclusion: The device provides valuable quality control information for each subject. Time-activity curves can further characterize visible infiltration. Even when the injection site was out of the field of view, the time-activity curves could still detect and characterize infiltration. Our initial experience showed that the quality assurance information obtained from the device helped reduce the rate and severity of infiltration. The device revealed site-specific contributing factors that helped nuclear medicine physicians and technologists customize their quality improvement efforts to these site-specific issues. Reducing infiltration can improve image quality and SUV quantification, as well as the ability to minimize variability in a site's PET/CT results. © 2017 by the Society of Nuclear Medicine and Molecular Imaging.

Oblate Field-Reversed Configuration Experiments with Neutral Beam Injection

NASA Astrophysics Data System (ADS)

T., II; Gi, K.; Umezawa, T.; Inomoto, M.; Ono, Y.

2011-11-01

The effect of energetic beam ions on oblate Field-Reversed Configurations (FRCs) has been studied experimentally in the TS-4 plasma merging device. In order to examine its kinetic effects, we developed an economical pulsed Neutral Beam Injection (NBI) system by using a washer gun plasma source and finally attained the beam power of 0.6 MW (15 kV, 40 A) for its pulse length of 0.5 ms, longer than the FRC lifetime in TS-4. The Monte Carlo simulation indicates that the tangential NB ions of 15 keV are trapped between the magnetic axis and the separatrix. We found that two merging high-s (s is plasma size normalized by ion gyroradius) hydrogen spheromaks with opposite helicities relaxed into the large scale FRC with poloidal flux as high as 15 mWb under the assistance of the NBI. Without the assistance of NBI, however, they did not relax to an FRC but to another spheromak. These facts suggest some ion kinetic effects such as toroidal ion flow are essential to FRC stability. Recently, two new NB sources with acceleration voltage and current of 15 kV and 20 A were installed on the TS-4 device on the midplane for tangential injection, increasing the beam power over 1 MW. We will start the upgraded FRC experiments using the 1 MW NBI for ion flow control.

Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

PubMed

Huang, Fei; Wu, Hongbin; Cao, Yong

2010-07-01

Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references).

Characterization and optimization of low cost microfluidic thread based electroanalytical device for micro flow injection analysis.

PubMed

Agustini, Deonir; Bergamini, Márcio F; Marcolino-Junior, Luiz Humberto

2017-01-25

The micro flow injection analysis (μFIA) is a powerful technique that uses the principles of traditional flow analysis in a microfluidic device and brings a number of improvements related to the consumption of reagents and samples, speed of analysis and portability. However, the complexity and cost of manufacturing processes, difficulty in integrating micropumps and the limited performance of systems employing passive pumps are challenges that must be overcome. Here, we present the characterization and optimization of a low cost device based on cotton threads as microfluidic channel to perform μFIA based on passive pumps with good analytical performance in a simple, easy and inexpensive way. The transport of solutions is made through cotton threads by capillary force facilitated by gravity. After studying and optimizing several features related to the device, were obtained a flow rate of 2.2 ± 0.1 μL s -1 , an analytical frequency of 208 injections per hour, a sample injection volume of 2.0 μL and a waste volume of approximately 40 μL per analysis. For chronoamperometric determination of naproxen, a detection limit of 0.29 μmol L -1 was reached, with a relative standard deviation (RSD) of 1.69% between injections and a RSD of 3.79% with five different devices. Thus, based on the performance presented by proposed microfluidic device, it is possible to overcome some limitations of the μFIA systems based on passive pumps and allow expansion in the use of this technique. Copyright © 2016 Elsevier B.V. All rights reserved.

Determination of P3HT Trap Site Energies by Thermally Stimulated Current

NASA Astrophysics Data System (ADS)

Souza, J. F. P.; Serbena, J. P. M.; Kowalski, E. L.; Akcelrud, L. C.

2018-02-01

The thermal, electrical and morphological characterization of poly(3-hexylthiophene-2,5diyl) (P3HT) is presented and discussed. Thermal analyses revealed high glass transition, melting and degradation temperatures, indicating high stability of the polymer to annealings in the range 25-200°C. Electrical measurements were performed in spin-coated devices constructed using indium tin oxide (ITO) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) in the sandwich structure ITO/PEDOT:PSS/P3HT/Al. The devices were thermally treated at 25°C, 100°C, 150°C, and 200°C prior to the measurements. Characteristic curves of current density versus voltage showed that the injection of charge carriers is governed by tunneling at high electric fields. Hole mobility was estimated by impedance spectroscopy, showing a maximum value of 8.6 × 10-5 cm2/Vs for annealed films at 150°C. A thermally stimulated current technique was used to analyze the trap density in the P3HT and its respective energies for all devices, presenting the lowest trap density for annealed films at 150°C. Morphological features observed by atomic force microscopy showed that the 150°C thermally treated film presents the best interface condition of the four investigated annealing temperatures.

Spin Coherence at the Nanoscale: Polymer Surfaces and Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Epstein, Arthur J.

2013-09-10

Breakthrough results were achieved during the reporting period in the areas of organic spintronics. (A) For the first time the giant magnetic resistance (GMR) was observed in spin valve with an organic spacer. Thus we demonstrated the ability of organic semiconductors to transport spin in GMR devices using rubrene as a prototype for organic semiconductors. (B) We discovered the electrical bistability and spin valve effect in a ferromagnet /organic semiconductor/ ferromagnet heterojunction. The mechanism of switching between conducting phases and its potential applications were suggested. (C) The ability of V(TCNE)x to inject spin into organic semiconductors such as rubrene wasmore » demonstrated for the first time. The mechanisms of spin injection and transport from and into organic magnets as well through organic semiconductors were elucidated. (D) In collaboration with the group of OSU Prof. Johnston-Halperin we reported the successful extraction of spin polarized current from a thin film of the organic-based room temperature ferrimagnetic semiconductor V[TCNE]x and its subsequent injection into a GaAs/AlGaAs light-emitting diode (LED). Thus all basic steps for fabrication of room temperature, light weight, flexible all organic spintronic devices were successfully performed. (E) A new synthesis/processing route for preparation of V(TCNE)x enabling control of interface and film thicknesses at the nanoscale was developed at OSU. Preliminary results show these films are higher quality and what is extremely important they are substantially more air stable than earlier prepared V(TCNE)x. In sum the breakthrough results we achieved in the past two years form the basis of a promising new technology, Multifunctional Flexible Organic-based Spintronics (MFOBS). MFOBS technology enables us fabrication of full function flexible spintronic devices that operate at room temperature.« less

The impact of the Fermi-Dirac distribution on charge injection at metal/organic interfaces.

PubMed

Wang, Z B; Helander, M G; Greiner, M T; Lu, Z H

2010-05-07

The Fermi level has historically been assumed to be the only energy-level from which carriers are injected at metal/semiconductor interfaces. In traditional semiconductor device physics, this approximation is reasonable as the thermal distribution of delocalized states in the semiconductor tends to dominate device characteristics. However, in the case of organic semiconductors the weak intermolecular interactions results in highly localized electronic states, such that the thermal distribution of carriers in the metal may also influence device characteristics. In this work we demonstrate that the Fermi-Dirac distribution of carriers in the metal has a much more significant impact on charge injection at metal/organic interfaces than has previously been assumed. An injection model which includes the effect of the Fermi-Dirac electron distribution was proposed. This model has been tested against experimental data and was found to provide a better physical description of charge injection. This finding indicates that the thermal distribution of electronic states in the metal should, in general, be considered in the study of metal/organic interfaces.

I-V and C-V Characterization of a High-Responsivity Graphene/Silicon Photodiode with Embedded MOS Capacitor.

PubMed

Luongo, Giuseppe; Giubileo, Filippo; Genovese, Luca; Iemmo, Laura; Martucciello, Nadia; Di Bartolomeo, Antonio

2017-06-27

We study the effect of temperature and light on the I-V and C-V characteristics of a graphene/silicon Schottky diode. The device exhibits a reverse-bias photocurrent exceeding the forward current and achieves a photoresponsivity as high as 2.5 A / W . We show that the enhanced photocurrent is due to photo-generated carriers injected in the graphene/Si junction from the parasitic graphene/SiO₂/Si capacitor connected in parallel to the diode. The same mechanism can occur with thermally generated carriers, which contribute to the high leakage current often observed in graphene/Si junctions.

Antiferromagnetic resonance excited by oscillating electric currents

NASA Astrophysics Data System (ADS)

Sluka, Volker

2017-12-01

In antiferromagnetic materials the order parameter exhibits resonant modes at frequencies that can be in the terahertz range, making them interesting components for spintronic devices. Here, it is shown that antiferromagnetic resonance can be excited using the inverse spin-Hall effect in a system consisting of an antiferromagnetic insulator coupled to a normal-metal waveguide. The time-dependent interplay between spin torque, ac spin accumulation, and magnetic degrees of freedom is studied. It is found that the dynamics of the antiferromagnet affects the frequency-dependent conductivity of the normal metal. Further, a comparison is made between spin-current-induced and Oersted-field-induced excitation under the condition of constant power injection.

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc ismore » a promising HIL material for highly efficient OLEDs.« less

Nonthermal plasma processor utilizing additive-gas injection and/or gas extraction

DOEpatents

Rosocha, Louis A.

2006-06-20

A device for processing gases includes a cylindrical housing in which an electrically grounded, metal injection/extraction gas supply tube is disposed. A dielectric tube surrounds the injection/extraction gas supply tube to establish a gas modification passage therearound. Additionally, a metal high voltage electrode circumscribes the dielectric tube. The high voltage electrode is energizable to create nonthermal electrical microdischarges between the high voltage electrode and the injection/extraction gas supply tube across the dielectric tube within the gas modification passage. An injection/extraction gas and a process gas flow through the nonthermal electrical microdischarges within the gas modification passage and a modified process gas results. Using the device contaminants that are entrained in the process gas can be destroyed to yield a cleaner, modified process gas.

Recent Advance in Organic Spintronics and Magnetic Field Effect

NASA Astrophysics Data System (ADS)

Valy Vardeny, Z.

2013-03-01

In this talk several important advances in the field of Organic Spintronics and magnetic field effect (MFE) of organic films and optoelectronic devices that have occurred during the past two years from the Utah group will be surveyed and discussed. (i) Organic Spintronics: We demonstrated spin organic light emitting diode (spin-OLED) using two FM injecting electrodes, where the electroluminescence depends on the mutual orientation of the electrode magnetization directions. This development has opened up research studies into organic spin-valves (OSV) in the space-charge limited current regime. (ii) Magnetic field effect: We demonstrated that the photoinduced absorption spectrum in organic films (where current is not involved) show pronounced MFE. This unravels the underlying mechanism of the MFE in organic devices, to be more in agreement with the field of MFE in Biochemistry. (iii) Spin effects in organic optoelectronic devices: We demonstrated that certain spin 1/2 radical additives to donor-acceptor blends substantially enhance the power conversion efficiency of organic photovoltaic (OPV) solar cells. This effect shows that studies of spin response and MFE in OPV devices are promising. In collaboration with T. Nguyen, E. Ehrenfreund, B. Gautam, Y. Zhang and T. Basel. Supported by the DOE grant 04ER46109 ; NSF Grant # DMR-1104495 and MSF-MRSEC program DMR-1121252 [2,3].

System and method for monitoring and controlling stator winding temperature in a de-energized AC motor

DOEpatents

Lu, Bin [Kenosha, WI; Luebke, Charles John [Sussex, WI; Habetler, Thomas G [Snellville, GA; Zhang, Pinjia [Atlanta, GA; Becker, Scott K [Oak Creek, WI

2011-12-27

A system and method for measuring and controlling stator winding temperature in an AC motor while idling is disclosed. The system includes a circuit having an input connectable to an AC source and an output connectable to an input terminal of a multi-phase AC motor. The circuit further includes a plurality of switching devices to control current flow and terminal voltages in the multi-phase AC motor and a controller connected to the circuit. The controller is configured to activate the plurality of switching devices to create a DC signal in an output of the motor control device corresponding to an input to the multi-phase AC motor, determine or estimate a stator winding resistance of the multi-phase AC motor based on the DC signal, and estimate a stator temperature from the stator winding resistance. Temperature can then be controlled and regulated by DC injection into the stator windings.

Electrical properties of MOS devices fabricated on the 4H-SiC C-face.

NASA Astrophysics Data System (ADS)

Chen, Zengjun; Ahyi, A. C.; Williams, J. R.

2007-11-01

The electrical characteristics of MOS devices fabricated on the carbon face of 4H-SiC will be described. The C-face has a higher oxidation rate and a higher interface trap density compared to the Si-face. The thermal oxidation rate and the distribution of interface traps under different oxidation conditions will be discussed in this presentation. Sequential post-oxidation anneals in nitric oxide and hydrogen effectively reduces the interface density (Dit) near the conduction band edge. However, deeper in the band gap, the trap density remains higher compared to the Si-face. Time-dependent dielectric breakdown (TDDB) studies have also been performed to investigate oxide reliability on the C-face, and current-voltage measurements show that a low barrier height against carrier injection likely contributes to oxide degradation. Nevertheless, the effective channel mobility and threshold voltage for n-channel C-face lateral MOSFETs compare favorably with similar Si-face devices.

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

NASA Astrophysics Data System (ADS)

Riminucci, Alberto; Graziosi, Patrizio; Calbucci, Marco; Cecchini, Raimondo; Prezioso, Mirko; Borgatti, Francesco; Bergenti, Ilaria; Dediu, Valentin Alek

2018-04-01

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (˜0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm-3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

NASA Astrophysics Data System (ADS)

Liang, De-Chun; An, Qi; Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, Zhan-Guo

2011-10-01

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quantum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Memory properties of a Ge nanoring MOS device fabricated by pulsed laser deposition.

PubMed

Ma, Xiying

2008-07-09

The non-volatile charge-storage properties of memory devices with MOS structure based on Ge nanorings have been studied. The two-dimensional Ge nanorings were prepared on a p-Si(100) matrix by means of pulsed laser deposition (PLD) using the droplet technique combined with rapid annealing. Complete planar nanorings with well-defined sharp inner and outer edges were formed via an elastic self-transformation droplet process, which is probably driven by the lateral strain of the Ge/Si layers and the surface tension in the presence of Ar gas. The low leakage current was attributed to the small roughness and the few interface states in the planar Ge nanorings, and also to the effect of Coulomb blockade preventing injection. A significant threshold-voltage shift of 2.5 V was observed when an operating voltage of 8 V was implemented on the device.

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.

PubMed

Hwang, Wang-Taek; Min, Misook; Jeong, Hyunhak; Kim, Dongku; Jang, Jingon; Yoo, Daekyung; Jang, Yeonsik; Kim, Jun-Woo; Yoon, Jiyoung; Chung, Seungjun; Yi, Gyu-Chul; Lee, Hyoyoung; Wang, Gunuk; Lee, Takhee

2016-11-25

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

NASA Astrophysics Data System (ADS)

Matthus, Christian D.; Huerner, Andreas; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

2018-06-01

In this study, the influence of the emitter efficiency on the forward current-voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.

MRI in ocular drug delivery

PubMed Central

Li, S. Kevin; Lizak, Martin J.; Jeong, Eun-Kee

2008-01-01

Conventional pharmacokinetic methods for studying ocular drug delivery are invasive and cannot be conveniently applied to humans. The advancement of MRI technology has provided new opportunities in ocular drug-delivery research. MRI provides a means to non-invasively and continuously monitor ocular drug-delivery systems with a contrast agent or compound labeled with a contrast agent. It is a useful technique in pharmacokinetic studies, evaluation of drug-delivery methods, and drug-delivery device testing. Although the current status of the technology presents some major challenges to pharmaceutical research using MRI, it has a lot of potential. In the past decade, MRI has been used to examine ocular drug delivery via the subconjunctival route, intravitreal injection, intrascleral injection to the suprachoroidal space, episcleral and intravitreal implants, periocular injections, and ocular iontophoresis. In this review, the advantages and limitations of MRI in the study of ocular drug delivery are discussed. Different MR contrast agents and MRI techniques for ocular drug-delivery research are compared. Ocular drug-delivery studies using MRI are reviewed. PMID:18186077

Improved electron injection in spin coated Alq3 incorporated ZnO thin film in the device for solution processed OLEDs

NASA Astrophysics Data System (ADS)

Dasi, Gnyaneshwar; Ramarajan, R.; Thangaraju, Kuppusamy

2018-04-01

We deposit tris-(8-hydroxyquinoline)aluminum (Alq3) incorporated zinc oxide (ZnO) thin films by spin coating method under the normal ambient. It showed the higher transmittance (90% at 550 nm) when compared to that (80% at 550 nm) of spin coated pure ZnO film. SEM studies show that the Alq3 incorporation in ZnO film also enhances the formation of small sized particles arranged in the network of wrinkles on the surface. XRD reveals the improved crystalline properties upon Alq3 inclusion. We fabricate the electron-only devices (EODs) with the structure of ITO/spin coated ZnO:Alq3 as ETL/Alq3 interlayer/LiF/Al. The device showed the higher electron current density of 2.75 mA/cm2 at 12V when compared to that (0.82 mA/cm2 at 12V) of the device using pure ZnO ETL. The device results show that it will be useful to fabricate the low-cost solution processed OLEDs for future lighting and display applications.

Portable Intravenous Fluid Production Device for Ground Use

NASA Technical Reports Server (NTRS)

Scarpa, Philip J.; Scheuer, Wolfgang K.

2012-01-01

There are several medical conditions that require intravenous (IV) fluids. Limitations of mass, volume, storage space, shelf-life, transportation, and local resources can restrict the availability of such important fluids. These limitations are expected in long-duration space exploration missions and in remote or austere environments on Earth. Current IV fluid production requires large factory-based processes. Easy, portable, on-site production of IV fluids can eliminate these limitations. Based on experience gained in developing a device for spaceflight, a ground-use device was developed. This design uses regular drinking water that is pumped through two filters to produce, in minutes, sterile, ultrapure water that meets the stringent quality standards of the United States Pharmacopeia for Water for Injection (Total Bacteria, Conductivity, Endotoxins, Total Organic Carbon). The device weighs 2.2 lb (1 kg) and is 10 in. long, 5 in. wide, and 3 in. high (.25, 13, and 7.5 cm, respectively) in its storage configuration. This handheld device produces one liter of medical-grade water in 21 minutes. Total production capacity for this innovation is expected to be in the hundreds of liters.

Diffusion length measurements using the scanning electron microscope. [in semiconductor devices

NASA Technical Reports Server (NTRS)

Weizer, V. G.

1975-01-01

A measurement technique employing the scanning electron microscope is described in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through the application of highly doped surface field layers. The influence of high injection level effects and low-high junction current generation on the resulting measurement was investigated. Close agreement is found between the diffusion lengths measured by this method and those obtained using a penetrating radiation technique.

High power pumped MID-IR wavelength devices using nonlinear frequency mixing (NFM)

NASA Technical Reports Server (NTRS)

Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

2001-01-01

Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices

NASA Technical Reports Server (NTRS)

Sanders, Steven (Inventor); Lang, Robert J. (Inventor); Waarts, Robert G. (Inventor)

1999-01-01

Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

Laboratory-Model Integrated-System FARAD Thruster

NASA Technical Reports Server (NTRS)

Polzin, K.A.; Best, S.; Miller, R.; Rose, M.F.; Owens, T.

2008-01-01

Pulsed inductive plasma accelerators are spacecraft propulsion devices in which energy is stored in a capacitor and then discharged through an inductive coil. The device is electrodeless, inducing a plasma current sheet in propellant located near the face of the coil. The propellant is accelerated and expelled at a high exhaust velocity (order of 10 km/s) through the interaction of the plasma current with an induced magnetic field. The Faraday Accelerator with RF-Assisted Discharge (FARAD) thruster [1,2] is a type of pulsed inductive plasma accelerator in which the plasma is preionized by a mechanism separate from that used to form the current sheet and accelerate the gas. Employing a separate preionization mechanism in this manner allows for the formation of an inductive current sheet at much lower discharge energies and voltages than those found in previous pulsed inductive accelerators like the Pulsed Inductive Thruster (PIT). In a previous paper [3], the authors presented a basic design for a 100 J/pulse FARAD laboratory-version thruster. The design was based upon guidelines and performance scaling parameters presented in Refs. [4, 5]. In this paper, we expand upon the design presented in Ref. [3] by presenting a fully-assembled and operational FARAD laboratory-model thruster and addressing system and subsystem-integration issues (concerning mass injection, preionization, and acceleration) that arose during assembly. Experimental data quantifying the operation of this thruster, including detailed internal plasma measurements, are presented by the authors in a companion paper [6]. The thruster operates by first injecting neutral gas over the face of a flat, inductive acceleration coil and at some later time preionizing the gas. Once the gas is preionized current is passed through the acceleration coil, inducing a plasma current sheet in the propellant that is accelerated away from the coil through electromagnetic interaction with the time-varying magnetic field. Neutral gas is injected over the face of the acceleration coil through a fast-acting valve that feeds a central distribution manifold. The thruster is designed to preionize the gas using an RF-frequency ringing signal produced by a discharging Vector Inversion Generator (VIG). The acceleration stage consists of a multiple-turn, multiple-strand spiral induction coil (see Fig. 1, left panel) and is designed for operation at discharge energies on the order of 100 J/pulse. Several different pulsed power train modules can be used to drive current through the acceleration coil. One such power train is based upon the Bernardes and Merryman circuit topology, which restricts voltage reversal on the capacitor banks and can be clamped to eliminate current reversal in the coil. A second option is a pulse-compression-ring power train (see Fig. 1, right panel), which takesa temporally broad, low current pulse and transforms it into a short, high current pulse.

[Needle-free injection--science fiction or comeback of an almost forgotten drug delivery system?].

PubMed

Ziegler, Andreas

2007-08-01

The first to create a "needle-free injector" was the American anesthetist Robert A. Hingson, 65 year ago. Since that time those devices underwent a changeful history. In 1986 an outbreak of hepatitis B among patients receiving injections from a needle-free multiple-use-nozzle injector was documented and related to the use of the injector device. Due to such risk of transmission of infection with these reusable devices, their application has been restricted. In 1998 the WHO recommended that only conventional needles and syringes should be used for immunization until safe needle-free injectors are identified through independent safety testing. Since needle-free injection has shown numerous advantages in comparison to conventional injection, new systems were developed that combine the advantages of needle-free injection with sufficient safety in mass vaccination programs. As an alternative to this early injector type, the disposable-cartridge injectors were developed. The newest research field in the area of the needle-free injection systems opened with the development of powder injectors, in which the drug preparation is no longer a suspension or solution, but a powdered solid. This injector type using powder formulations shows a number of advantages in comparison with the conventional needle/syringe injection technique as well as towards the liquid jet injectors. Due to this new kind of injectors the comeback of the needle-free injection technique in large-scale vaccination programs of the WHO seems reasonable and within reach.

An intensive insulinotherapy mobile phone application built on artificial intelligence techniques.

PubMed

Curran, Kevin; Nichols, Eric; Xie, Ermai; Harper, Roy

2010-01-01

Software to help control diabetes is currently an embryonic market with the main activity to date focused mainly on the development of noncomputerized solutions, such as cardboard calculators or computerized solutions that use "flat" computer models, which are applied to each person without taking into account their individual lifestyles. The development of true, mobile device-driven health applications has been hindered by the lack of tools available in the past and the sheer lack of mobile devices on the market. This has now changed, however, with the availability of pocket personal computer handsets. This article describes a solution in the form of an intelligent neural network running on mobile devices, allowing people with diabetes access to it regardless of their location. Utilizing an easy to learn and use multipanel user interface, people with diabetes can run the software in real time via an easy to use graphical user interface. The neural network consists of four neurons. The first is glucose. If the user's current glucose level is within the target range, the glucose weight is then multiplied by zero. If the glucose level is high, then there will be a positive value multiplied to the weight, resulting in a positive amount of insulin to be injected. If the user's glucose level is low, then the weights will be multiplied by a negative value, resulting in a decrease in the overall insulin dose. A minifeasibility trial was carried out at a local hospital under a consultant endocrinologist in Belfast. The short study ran for 2 weeks with six patients. The main objectives were to investigate the user interface, test the remote sending of data over a 3G network to a centralized server at the university, and record patient data for further proofing of the neural network. We also received useful feedback regarding the user interface and the feasibility of handing real-world patients a new mobile phone. Results of this short trial confirmed to a large degree that our approach (which also can be known as intensive insulinotherapy) has value and perhaps that our neural network approach has implications for future intelligent insulin pumps. Currently, there is no software available to tell people with diabetes how much insulin to inject in accordance with their lifestyle and individual inputs, which leads to adjustments in software predictions on the amount of insulin to inject. We have taken initial steps to supplement the knowledge and skills of health care professionals in controlling insulin levels on a daily basis using a mobile device for people who are less able to manage their disease, especially children and young adults. 2010 Diabetes Technology Society.

An Intensive Insulinotherapy Mobile Phone Application Built on Artificial Intelligence Techniques

PubMed Central

Curran, Kevin; Nichols, Eric; Xie, Ermai; Harper, Roy

2010-01-01

Background Software to help control diabetes is currently an embryonic market with the main activity to date focused mainly on the development of noncomputerized solutions, such as cardboard calculators or computerized solutions that use “flat” computer models, which are applied to each person without taking into account their individual lifestyles. The development of true, mobile device-driven health applications has been hindered by the lack of tools available in the past and the sheer lack of mobile devices on the market. This has now changed, however, with the availability of pocket personal computer handsets. Method This article describes a solution in the form of an intelligent neural network running on mobile devices, allowing people with diabetes access to it regardless of their location. Utilizing an easy to learn and use multipanel user interface, people with diabetes can run the software in real time via an easy to use graphical user interface. The neural network consists of four neurons. The first is glucose. If the user's current glucose level is within the target range, the glucose weight is then multiplied by zero. If the glucose level is high, then there will be a positive value multiplied to the weight, resulting in a positive amount of insulin to be injected. If the user's glucose level is low, then the weights will be multiplied by a negative value, resulting in a decrease in the overall insulin dose. Results A minifeasibility trial was carried out at a local hospital under a consultant endocrinologist in Belfast. The short study ran for 2 weeks with six patients. The main objectives were to investigate the user interface, test the remote sending of data over a 3G network to a centralized server at the university, and record patient data for further proofing of the neural network. We also received useful feedback regarding the user interface and the feasibility of handing real-world patients a new mobile phone. Results of this short trial confirmed to a large degree that our approach (which also can be known as intensive insulinotherapy) has value and perhaps that our neural network approach has implications for future intelligent insulin pumps. Conclusions Currently, there is no software available to tell people with diabetes how much insulin to inject in accordance with their lifestyle and individual inputs, which leads to adjustments in software predictions on the amount of insulin to inject. We have taken initial steps to supplement the knowledge and skills of health care professionals in controlling insulin levels on a daily basis using a mobile device for people who are less able to manage their disease, especially children and young adults. PMID:20167186

Enhancing current-induced torques by abutting additional spin polarizer layer to nonmagnetic metal layer

NASA Astrophysics Data System (ADS)

Go, Gyungchoon; Lee, Kyung-Jin; Kim, Young Keun

2017-04-01

Recently, the switching of a perpendicularly magnetized ferromagnet (FM) by injecting an in-plane current into an attached non-magnet (NM) has become of emerging technological interest. This magnetization switching is attributed to the spin-orbit torque (SOT) originating from the strong spin-orbit coupling of the NM layer. However, the switching efficiency of the NM/FM structure itself may be insufficient for practical use, as for example, in spin transfer torque (STT)-based magnetic random access memory (MRAM) devices. Here we investigate spin torque in an NM/FM structure with an additional spin polarizer (SP) layer abutted to the NM layer. In addition to the SOT contribution, a spin-polarized current from the SP layer creates an extra spin chemical potential difference at the NM/FM interface and gives rise to a STT on the FM layer. We show that, using typical parameters including device width, thickness, spin diffusion length, and the spin Hall angle, the spin torque from the SP layer can be much larger than that from the spin Hall effect (SHE) of the NM.

Improved electron injection in all-solution-processed n-type organic field-effect transistors with an inkjet-printed ZnO electron injection layer

NASA Astrophysics Data System (ADS)

Roh, Jeongkyun; Kim, Hyeok; Park, Myeongjin; Kwak, Jeonghun; Lee, Changhee

2017-10-01

Interface engineering for the improved injection properties of all-solution-processed n-type organic field-effect transistors (OFETs) arising from the use of an inkjet-printed ZnO electron injection layer were demonstrated. The characteristics of ZnO in terms of electron injection and transport were investigated, and then we employed ZnO as the electron injection layer via inkjet-printing during the fabrication of all-solution-processed, n-type OFETs. With the inkjet-printed ZnO electron injection layer, the devices exhibited approximately five-fold increased mobility (0.0058 cm2/V s to 0.030 cm2/V s), more than two-fold increased charge concentration (2.76 × 1011 cm-2 to 6.86 × 1011 cm-2), and two orders of magnitude reduced device resistance (120 MΩ cm to 3 MΩ cm). Moreover, n-type polymer form smoother film with ZnO implying denser packing of polymer, which results in higher mobility.

Fundamentals of rapid injection molding for microfluidic cell-based assays.

PubMed

Lee, Ulri N; Su, Xiaojing; Guckenberger, David J; Dostie, Ashley M; Zhang, Tianzi; Berthier, Erwin; Theberge, Ashleigh B

2018-01-30

Microscale cell-based assays have demonstrated unique capabilities in reproducing important cellular behaviors for diagnostics and basic biological research. As these assays move beyond the prototyping stage and into biological and clinical research environments, there is a need to produce microscale culture platforms more rapidly, cost-effectively, and reproducibly. 'Rapid' injection molding is poised to meet this need as it enables some of the benefits of traditional high volume injection molding at a fraction of the cost. However, rapid injection molding has limitations due to the material and methods used for mold fabrication. Here, we characterize advantages and limitations of rapid injection molding for microfluidic device fabrication through measurement of key features for cell culture applications including channel geometry, feature consistency, floor thickness, and surface polishing. We demonstrate phase contrast and fluorescence imaging of cells grown in rapid injection molded devices and provide design recommendations to successfully utilize rapid injection molding methods for microscale cell-based assay development in academic laboratory settings.

Nonlinear model analysis of all-optical flip-flop and inverter operations of microring laser

NASA Astrophysics Data System (ADS)

Kobayashi, Naoki; Kawamura, Yusaku; Aoki, Ryosuke; Kokubun, Yasuo

2018-03-01

We explore a theoretical model of bistability at two adjacent lasing wavelengths from an InGaAs/InGaAsP multiple quantum well (MQW) microring laser. We show that nonlinear effects on the phase and amplitude play significant roles in the lasing operations of the microring laser. Numerical simulations indicate that all-optical flip-flop operations and inverter operations can be observed within the same device by controlling the injection current. The validity of our analysis is confirmed by a comparison of the results for numerical simulations with experimental results of the lasing spectrum. We believe that the analysis presented in this paper will be useful for the future design of all-optical signal processing devices.

All-solution processed transparent organic light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Min; Höfle, Stefan; Czolk, Jens; Mertens, Adrian; Colsmann, Alexander

2015-11-01

In this work, we report on indium tin oxide-free, all-solution processed transparent organic light emitting diodes (OLEDs) with inverted device architecture. Conductive polymer layers are employed as both transparent cathodes and transparent anodes, with the top anodes having enhanced conductivities from a supporting stochastic silver nanowire mesh. Both electrodes exhibit transmittances of 80-90% in the visible spectral regime. Upon the incorporation of either yellow- or blue-light emitting fluorescent polymers, the OLEDs show low onset voltages, demonstrating excellent charge carrier injection from the polymer electrodes into the emission layers. Overall luminances and current efficiencies equal the performance of opaque reference OLEDs with indium tin oxide and aluminium electrodes, proving excellent charge carrier-to-light conversion within the device.

Linewidth measurements of tunable diode lasers using heterodyne and etalon techniques

NASA Technical Reports Server (NTRS)

Reid, J.; Cassidy, D. T.; Menzies, R. T.

1982-01-01

Measurements of the linewidths of Pb-salt diode lasers operating in the 8- and 9-micron region are reported. The linewidths of the 9-micron lasers were determined by conventional heterodyne techniques, while for the 8-micron lasers a new technique based on a Fabry-Perot etalon was used. The new technique avoids the complexity and limited wavelength range of the heterodyne measurements and can be used for any tunable laser. The linewidths observed varied from 0.6 to more than 500-MHz FWHM. The linewidth was found to vary dramatically from device to device, to depend strongly on junction temperature and injection current, and to be correlated with vibrations caused by operation of a closed-cycle refrigerator.

Two-dimensional numerical model for the high electron mobility transistor

NASA Astrophysics Data System (ADS)

Loret, Dany

1987-11-01

A two-dimensional numerical drift-diffusion model for the High Electron Mobility Transistor (HEMT) is presented. Special attention is paid to the modeling of the current flow over the heterojunction. A finite difference scheme is used to solve the equations, and a variable mesh spacing was implemented to cope with the strong variations of functions near the heterojunction. Simulation results are compared to experimental data for a 0.7 μm gate length device. Small-signal transconductances and cut-off frequency obtained from the 2-D model agree well with the experimental values from S-parameter measurements. It is shown that the numerical models give good insight into device behaviour, including important parasitic effects such as electron injection into the bulk GaAs.

Accuracy and Injection Force of the Gla-300 Injection Device Compared With Other Commercialized Disposable Insulin Pens.

PubMed

Klonoff, David; Nayberg, Irina; Thonius, Marissa; See, Florian; Abdel-Tawab, Mona; Erbstein, Frank; Haak, Thomas

2015-08-26

To deliver insulin glargine 300 U/mL (Gla-300), the widely used SoloSTAR(®) pen has been modified to allow for accurate and precise delivery of required insulin units in one-third of the volume compared with insulin glargine 100 U/mL, while improving usability. Here we compare the accuracy and injection force of 3 disposable insulin pens: Gla-300 SoloSTAR(®), FlexPen(®), and KwikPen™. For the accuracy assessment, 60 of each of the 3 tested devices were used for the delivery of 3 different doses (1 U, half-maximal dose, and maximal dose), which were measured gravimetrically. For the injection force assessment, 20 pens of each of the 3 types were tested twice at half-maximal and once at maximal dose, at an injection speed of 6 U/s. All tested pens met the International Organization for Standardization (ISO) requirements for dosing accuracy, with Gla-300 SoloSTAR showing the lowest between-dose variation (greatest reproducibility) at all dose levels. Mean injection force was significantly lower for Gla-300 SoloSTAR than for the other 2 pens at both half maximal and maximal doses (P < .0271). All tested pens were accurate according to ISO criteria, and the Gla-300 SoloSTAR pen displayed the greatest reproducibility and lowest injection force of any of the 3 tested devices. © 2015 Diabetes Technology Society.

Investigation of charge injection and transport behavior in multilayer structure consisted of ferromagnetic metal and organic polymer under external fields

NASA Astrophysics Data System (ADS)

Zhao, Hua; Meng, Wei-Feng

2017-10-01

In this paper a five layer organic electronic device with alternately placed ferromagnetic metals and organic polymers: ferromagnetic metal/organic layer/ferromagnetic metal/organic layer/ferromagnetic metal, which is injected a spin-polarized electron from outsides, is studied theoretically using one-dimensional tight binding model Hamiltonian. We calculated equilibrium state behavior after an electron with spin is injected into the organic layer of this structure, charge density distribution and spin polarization density distribution of this injected spin-polarized electron, and mainly studied possible transport behavior of the injected spin polarized electron in this multilayer structure under different external electric fields. We analyze the physical process of the injected electron in this multilayer system. It is found by our calculation that the injected spin polarized electron exists as an electron-polaron state with spin polarization in the organic layer and it can pass through the middle ferromagnetic layer from the right-hand organic layer to the left-hand organic layer by the action of increasing external electric fields, which indicates that this structure may be used as a possible spin-polarized charge electronic device and also may provide a theoretical base for the organic electronic devices and it is also found that in the boundaries between the ferromagnetic layer and the organic layer there exist induced interface local dipoles due to the external electric fields.

A new biolistic intradermal injector

NASA Astrophysics Data System (ADS)

Brouillette, M.; Doré, M.; Hébert, C.; Spooner, M.-F.; Marchand, S.; Côté, J.; Gobeil, F.; Rivest, M.; Lafrance, M.; Talbot, B. G.; Moutquin, J.-M.

2016-01-01

We present a novel intradermal needle-free drug delivery device which exploits the unsteady high-speed flow produced by a miniature shock tube to entrain drug or vaccine particles onto a skin target. A first clinical study of pain and physiological response of human subjects study is presented, comparing the new injector to intramuscular needle injection. This clinical study, performed according to established pain assessment protocols, demonstrated that every single subject felt noticeably less pain with the needle-free injector than with the needle injection. Regarding local tolerance and skin reaction, bleeding was observed on all volunteers after needle injection, but on none of the subjects following powder injection. An assessment of the pharmacodynamics, via blood pressure, of pure captopril powder using the new device on spontaneously hypertensive rats was also performed. It was found that every animal tested with the needle-free injector exhibited the expected pharmacodynamic response following captopril injection. Finally, the new injector was used to study the delivery of an inactivated influenza vaccine in mice. The needle-free device induced serum antibody response to the influenza vaccine that was comparable to that of subcutaneous needle injection, but without requiring the use of an adjuvant. Although no effort was made to optimize the formulation or the injection parameters in the present study, the novel injector demonstrates great promise for the rapid, safe and painless intradermal delivery of systemic drugs and vaccines.

Automating fruit fly Drosophila embryo injection for high throughput transgenic studies

NASA Astrophysics Data System (ADS)

Cornell, E.; Fisher, W. W.; Nordmeyer, R.; Yegian, D.; Dong, M.; Biggin, M. D.; Celniker, S. E.; Jin, J.

2008-01-01

To decipher and manipulate the 14 000 identified Drosophila genes, there is a need to inject a large number of embryos with transgenes. We have developed an automated instrument for high throughput injection of Drosophila embryos. It was built on an inverted microscope, equipped with a motorized xy stage, autofocus, a charge coupled device camera, and an injection needle mounted on a high speed vertical stage. A novel, micromachined embryo alignment device was developed to facilitate the arrangement of a large number of eggs. The control system included intelligent and dynamic imaging and analysis software and an embryo injection algorithm imitating a human operator. Once the injection needle and embryo slide are loaded, the software automatically images and characterizes each embryo and subsequently injects DNA into all suitable embryos. The ability to program needle flushing and monitor needle status after each injection ensures reliable delivery of biomaterials. Using this instrument, we performed a set of transformation injection experiments. The robot achieved injection speeds and transformation efficiencies comparable to those of a skilled human injector. Because it can be programed to allow injection at various locations in the embryo, such as the anterior pole or along the dorsal or ventral axes, this system is also suitable for injection of general biochemicals, including drugs and RNAi.

Effects of the interfacial charge injection properties of silver nanowire transparent conductive electrodes on the performance of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Jin-Hoon; Triambulo, Ross E.; Park, Jin-Woo

2017-03-01

We investigated the charge injection properties of silver nanowire networks (AgNWs) in a composite-like structure with poly(2,3-dihydrothieno-1,4-dioxin)-poly(styrenesulfonate) (PEDOT:PSS). The composite films acted as the anodes and hole transport layers (HTLs) in organic light-emitting diodes (OLEDs). The current density (J)-voltage (V)-luminance (L) characteristics and power efficiency (ɛ) of the OLEDs were measured to determine their electrical and optical properties. The charge injection properties of the AgNWs in the OLEDs during operation were characterized via impedance spectroscopy (IS) by determining the variations in the capacitances (C) of the devices with respect to the applied V and the corresponding frequency (f). All measured results were compared with results for OLEDs fabricated on indium tin oxide (ITO) anodes. The OLEDs on AgNWs showed lower L and ɛ values than the OLEDs on ITO. It was also observed that AgNWs exhibit excellent charge injection properties and that the interfaces between the AgNWs and the HTL have very small charge injection barriers, resulting in an absence of charge carrier traps when charges move across these interfaces. However, in the AgNW-based OLED, there was a large mismatch in the number of injected holes and electrons. Furthermore, the highly conductive electrical paths of the AgNWs in the composite-like AgNW and PEDOT:PSS structure allowed a large leakage current of holes that did not participate in radiative recombination with the electrons; consequently, a lower ɛ was observed for the AgNW-based OLEDs than for the ITO-based OLEDs. To match the injection of electrons by the electron transport layer (ETL) in the AgNW-based OLED with that of holes by the AgNW/PEDOT:PSS composite anode, the electron injection barrier of the ETL was decreased by using the low work function polyethylenimine ethoxylated (PEIE) doped with n-type cesium carbonate (Cs2CO3). With the doped-PEIE, the performance of the AgNW-based OLED was significantly enhanced through the balanced injection of holes and electrons, which clearly verified our analysis results by IS.

Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes.

PubMed

Cho, Ikjun; Jung, Heeyoung; Jeong, Byeong Guk; Hahm, Donghyo; Chang, Jun Hyuk; Lee, Taesoo; Char, Kookheon; Lee, Doh C; Lim, Jaehoon; Lee, Changhee; Cho, Jinhan; Bae, Wan Ki

2018-06-19

We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.

Trial of a novel endoscopic tattooing biopsy forceps on animal model

PubMed Central

Si, Jian-Min; Sun, Lei-Min; Fan, Yu-Jing; Wang, Liang-Jing

2005-01-01

AIM: To tattoo gastric mucosa with a novel medical device which could be used to monitor and follow-up gastric mucosal lesions. METHODS: Combining endoscopic biopsy with sclerotherapy injection, we designed a new device that could perform biopsy and injection simultaneously. We performed endoscopies on a pig by using a novel endoscope tattoo biopsy forceps for 15 mo. At the same time, we used two-step method combining sclerotherapy injection needle with endoscopic biopsy. The acuity, inflammation and duration of endoscopy were compared between two methods. RESULTS: Compared with the old two-step method, although the inflammation induced by our new device was similar, the duration of procedure was markedly decreased and the acuity of tattooing was better than the old two-step method. All characteristics of the novel device complied with national safety guidelines. Follow-up gastroscopy after 15 mo showed the stained site with injection of 1:100 0.5 mL of India ink was still markedly visible with little inflammatory reaction. CONCLUSION: Endoscopic tattooing biopsy forceps can be widely used in monitoring precancerous lesions. Its safety and effectiveness has been established in animals. PMID:15793881

Electron Temperature Evolution During Local Helicity Injection on the Pegasus Toroidal Experiment

NASA Astrophysics Data System (ADS)

Schlossberg, D. J.; Barr, J. L.; Bodner, G. M.; Bongard, M. W.; Fonck, R. J.; Perry, J. M.; Reusch, J. A.; Rodriguez Sanchez, C.

2016-10-01

Understanding the electron temperature (Te) evolution during local helicity injection (LHI) is critical for scaling up this non-solenoidal startup technique to MA-class devices. The first comprehensive Te measurements during LHI reveal centrally-peaked profiles with Te > 100 eV for plasma current Ip > 120 kA, toroidal field 0.15 T, and electron density ne 1019 m-3. Te rises and is sustained from just after magnetic relaxation through the plasma decoupling from edge-localized injectors. Results are presented for two injector edge locations: outboard midplane and inboard divertor. Outboard midplane injection couples LHI with inductive drive from poloidal field ramps and radial compression during inward plasma growth. Comparisons of Te at different LHI-to-inductive drive ratios show some profile flattening for higher LHI drive fraction. The latter, constant-shape discharges were necessarily lower performance, with Ip 50 kA and reduced Te , max. Inboard divertor injection achieves higher Ip using minimal inductive drive and thus isolates effects of LHI drive on Te. Initial results in this configuration show Te rising rapidly at the injector location as the discharge grows, settling to a roughly flat profile 100 eV. Thus far, both scenarios provide relatively stable discharges with moderate ne and high-Te, suitable for coupling to auxiliary current drive. Detailed studies of confinement dynamics and discharge optimization are planned for the near future. Work supported by US DOE Grant DE-FG02-96ER54375.

Investigations of quantum effect semiconductor devices: The tunnel switch diode and the velocity modulation transistor

NASA Astrophysics Data System (ADS)

Daniel, Erik Stephen

In this thesis we present the results of experimental and theoretical studies of two quantum effect devices--the Tunnel Switch Diode (TSD) and the Velocity Modulation Transistor (VMT). We show that TSD devices can be fabricated such that they behave (semi-quantitatively) as predicted by simple analytical models and more advanced drift-diffusion simulations. These devices possess characteristics, such as on-state currents which range over nearly five orders of magnitude, and on/off current ratios which are even larger, which may allow for a practical implementation of a very dense transistorless SRAM architecture and possibly other novel circuit designs. We demonstrate that many TSD properties can be explained by analogy to a thyristor. In particular, we show that the thin oxide layer in the TSD plays a critical role, and that this can be understood in terms of current injection through the oxide, analogous to transport through the "current limiting" layer in a thyristor. As this oxide layer can be subjected to extreme stress during device operation, we have studied the effect of this stress on device behavior. We demonstrate many significant stress-dependent effects, and identify structures and operation modes which minimize these effects. We propose an InAs/GaSb/AlSb VMT which may allow for larger conductance modulation and higher temperature operation than has been demonstrated in similar GaAs/AlAs structures. Fundamental differences in device operation in the two materials systems and unusual transport mechanisms in the InAs/GaSb/AlSb system are identified as a result of the band lineups in the two systems. Boltzmann transport simulations are developed and presented, allowing a qualitative description of the transport in the InAs/GaSb/AlSb structure. Band structure calculations are carried out, allowing for device design. While no working VMT devices were produced, this is believed to be due to processing and crystal growth problems. We present methods used to overcome or circumvent a number of processing problems which resulted in shorting of the gate to the source/drain contacts. The results of electrical measurements are given, which may allow for identification of further obstacles to the production of working devices.

Charge injection and transport in a single organic monolayer island

NASA Astrophysics Data System (ADS)

Vuillaume, Dominique

2005-03-01

We report how electrons and holes, that are locally injected in a single organic monolayer island (where organic monolayers are made from sublimated oligomers (pentacene and other oligoacenes), or made from chemisorption in solution (self-assembled monolayers) of pi-conjugated moieties), stay localized or are able to delocalize over the island as a function of the molecular conformation (order vs. disorder) of this island. Charge carriers were locally injected by the apex of an atomic force microscope tip, and the resulting two-dimensional distribution and concentration of injected charges were measured by electrical force microscopy (EFM) experiments. We show that in crystalline monolayer islands, both electrons and holes can be equally injected, at a similar charge concentration for symmetric injection bias conditions, and that both charge carriers are delocalized over the whole island. On the contrary, charges injected into a more disordered monolayer stay localized at their injection point. These different results are discussed in relation with the electrical performances of molecular devices made from these monolayers (OFET, SAMFET). These results provide insight into the electronic properties, at the nanometer scale, of these molecular devices.

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

NASA Astrophysics Data System (ADS)

Gurram, M.; Omar, S.; van Wees, B. J.

2018-07-01

The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO2/Si substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.

Electrical spin injection from an n-type ferromagnetic semiconductor into a III-V device heterostructure

NASA Astrophysics Data System (ADS)

Kioseoglou, George; Hanbicki, Aubrey T.; Sullivan, James M.; van't Erve, Olaf M. J.; Li, Connie H.; Erwin, Steven C.; Mallory, Robert; Yasar, Mesut; Petrou, Athos; Jonker, Berend T.

2004-11-01

The use of carrier spin in semiconductors is a promising route towards new device functionality and performance. Ferromagnetic semiconductors (FMSs) are promising materials in this effort. An n-type FMS that can be epitaxially grown on a common device substrate is especially attractive. Here, we report electrical injection of spin-polarized electrons from an n-type FMS, CdCr2Se4, into an AlGaAs/GaAs-based light-emitting diode structure. An analysis of the electroluminescence polarization based on quantum selection rules provides a direct measure of the sign and magnitude of the injected electron spin polarization. The sign reflects minority rather than majority spin injection, consistent with our density-functional-theory calculations of the CdCr2Se4 conduction-band edge. This approach confirms the exchange-split band structure and spin-polarized carrier population of an FMS, and demonstrates a litmus test for these FMS hallmarks that discriminates against spurious contributions from magnetic precipitates.

Microfluidic model experiments on the injectability of monoclonal antibody solutions

NASA Astrophysics Data System (ADS)

Duchene, Charles; Filipe, Vasco; Nakach, Mostafa; Huille, Sylvain; Lindner, Anke

2017-11-01

Autoinjection devices that allow patients to self-administer medicine are becoming used more frequently; however, this advance comes with an increased need for precision in the injection process. The rare occurrence of protein aggregates in solutions of monoclonal antibodies constitutes a threat to the reliability of such devices. Here we study the flow of protein solutions containing aggregates in microfluidic model systems, mimicking injection devices, to gain fundamental understanding of the catastrophic clogging of constrictions of given size. We form aggregates by mechanically shaking or heating antibody solutions and then inject these solutions into microfluidic channels with varying types of constrictions. Geometrical clogging occurs when aggregates reach the size of the constriction and can in some cases be undone by increasing the applied pressure. We perform systematic experiments varying the relative aggregate size and the flow rate or applied pressure. The mechanical deformation of aggregates during their passage through constrictions is investigated to gain a better understanding of the clogging and unclogging mechanisms.

Reducing contact resistance in graphene devices through contact area patterning.

PubMed

Smith, Joshua T; Franklin, Aaron D; Farmer, Damon B; Dimitrakopoulos, Christos D

2013-04-23

Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the contact regions. These cuts are oriented normal to the channel and facilitate bonding between the contact metal and carbon atoms at the graphene cut edges, reproducibly maximizing "edge-contacted" injection. Despite the reduction in M-G contact area caused by these cuts, we find that a 32% reduction in contact resistance results in Cu-contacted, two-terminal devices, while a 22% reduction is achieved for top-gated graphene transistors with Pd contacts as compared to conventionally fabricated devices. The crucial role of contact annealing to facilitate this improvement is also elucidated. This simple approach provides a reliable and reproducible means of lowering contact resistance in graphene devices to bolster performance. Importantly, this enhancement requires no additional processing steps.

Comparison of the EZ-Cap recapper with the Mayo recapper for the prevention of needlesticks.

PubMed

Dewhirst, Chad A; Hung, Joseph C

2008-09-01

The purpose of this project was the development of a device that improves the design of our current capping block, the Mayo recapper. The major challenges for design and improvement included creating a device that is simple to use and can be applied throughout our department. We wanted a recapper device that increased safety and minimized the potential for needlesticks. Simplicity was another important factor, along with versatility and low cost. A new recapper, called EZ-Cap, was developed, and a comparison study was conducted to evaluate the pros and cons of the EZ-Cap recapper and the Mayo recapper. Nuclear medicine technologists (n = 10) in our department used each device when administering patient injections. At the conclusion of their patient injection rotation, they recorded on a survey sheet the pros and cons of each device. The results of this survey were used to evaluate the effectiveness, comfort level during use, and safety of each recapping device. We used a 2-level scoring system to help determine which device was more favorable. The first level focused on comfort and convenience and was given a score of +1 or -1. The second level focused on safety and was given a score of +2 or -2. Because we believed that safety was a high priority for our capping blocks, this level received a higher score than the first level. The Mayo recapper was the device preferred by 9 of 10 technologists surveyed. The EZ-Cap recapper had several technical issues that made it difficult to use and that could potentially lead to safety concerns. According to our scoring system, the Mayo recapper received a score of +9 for its pros and -4 for its cons. By comparison, the EZ-Cap recapper received a score of +7 for its pros and -16 for its cons. Our results show that the Mayo recapper was the device of choice because its pros outweighed its cons. However, we will continually improve the effectiveness of the Mayo recapper to prevent needlesticks.

Modeling reacting gases and aftertreatment devices for internal combustion engines

NASA Astrophysics Data System (ADS)

Depcik, Christopher David

As more emphasis is placed worldwide on reducing greenhouse gas emissions, automobile manufacturers have to create more efficient engines. Simultaneously, legislative agencies want these engines to produce fewer problematic emissions such as nitrogen oxides and particulate matter. In response, newer combustion methods, like homogeneous charge compression ignition and fuel cells, are being researched alongside the old standard of efficiency, the compression ignition or diesel engine. These newer technologies present a number of benefits but still have significant challenges to overcome. As a result, renewed interest has risen in making diesel engines cleaner. The key to cleaning up the diesel engine is the placement of aftertreatment devices in the exhaust. These devices have shown great potential in reducing emission levels below regulatory levels while still allowing for increased fuel economy versus a gasoline engine. However, these devices are subject to many flow control issues. While experimental evaluation of these devices helps to understand these issues better, it is impossible to solve the problem through experimentation alone because of time and cost constraints. Because of this, accurate models are needed in conjunction with the experimental work. In this dissertation, the author examines the entire exhaust system including reacting gas dynamics and aftertreatment devices, and develops a complete numerical model for it. The author begins by analyzing the current one-dimensional gas-dynamics simulation models used for internal combustion engine simulations. It appears that more accurate and faster numerical method is available, in particular, those developed in aeronautical engineering, and the author successfully implements one for the exhaust system. The author then develops a comprehensive literature search to better understand the aftertreatment devices. A number of these devices require a secondary injection of fuel or reductant in the exhaust stream. Accordingly, the author develops a simple post-cylinder injection model which can be easily tuned to match experimental findings. In addition, the author creates a general catalyst model which can be used to model virtually all of the different aftertreatment devices. Extensive validation of this model with experimental data is presented along with all of the numerical algorithms needed to reproduce the model.

Investigation of the optical and electrical characteristics of solution-processed poly (3 hexylthiophene) (P3HT): multiwall carbon nanotube (MWCNT) composite-based devices

NASA Astrophysics Data System (ADS)

Rathore, Priyanka; Mohan Singh Negi, Chandra; Singh Verma, Ajay; Singh, Amarjeet; Chauhan, Gayatri; Regis Inigo, Anto; Gupta, Saral K.

2017-08-01

Devices comprised of solution-processed poly (3-hexylthiophene) (P3HT)/multiwall carbon nanotubes (MWCNTs), with various concentrations of MWCNTs, were fabricated and characterized. The morphology of the P3HT: MWCNT nanocomposite was characterized by using field emission scanning electron microscopy (FESEM). The optical characteristics of the nanocomposite were studied by UV/VIS/NIR spectroscopy and Raman spectroscopy. The electrical properties of the fabricated devices were characterized by measuring the current density-voltage (J-V) characteristics. While the J-V characteristics of a pristine P3HT device reveal thermal injection limited charge transport, the P3HT: MWCNT nanocomposite-based devices exhibit three distinct voltage-dependent conduction regimes. The fitting curve with measured data reveals Ohmic conduction for a low voltage range, a trap-charge limited conduction (TCLC) process at an intermediate voltage range followed by a trap free space-charge limited conduction (SCLC) process at much higher voltages. A fundamental understanding of this work can assist in creating new charge transport pathways which will provide new avenues for the development of highly efficient polymer-based optoelectronic devices.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

PubMed

Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

2018-04-18

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

Photoresponse of polyaniline-functionalized graphene quantum dots

NASA Astrophysics Data System (ADS)

Lai, Sin Ki; Luk, Chi Man; Tang, Libin; Teng, Kar Seng; Lau, Shu Ping

2015-03-01

Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current-voltage (I-V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of +/-1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics.Polyaniline-functionalized graphene quantum dots (PANI-GQD) and pristine graphene quantum dots (GQDs) were utilized for optoelectronic devices. The PANI-GQD based photodetector exhibited higher responsivity which is about an order of magnitude at 405 nm and 7 folds at 532 nm as compared to GQD-based photodetectors. The improved photoresponse is attributed to the enhanced interconnection of GQD by island-like polymer matrices, which facilitate carrier transport within the polymer matrices. The optically tunable current-voltage (I-V) hysteresis of PANI-GQD was also demonstrated. The hysteresis magnifies progressively with light intensity at a scan range of +/-1 V. Both GQD and PANI-GQD devices change from positive to negative photocurrent when the bias reaches 4 V. Photogenerated carriers are excited to the trapping states in GQDs with increased bias. The trapped charges interact with charges injected from the electrodes which results in a net decrease of free charge carriers and a negative photocurrent. The photocurrent switching phenomenon in GQD and PANI-GQD devices may open up novel applications in optoelectronics. Electronic supplementary information (ESI) available: Raman spectrum of PANI-GQD, TGA, Red-shift of PL peak with the amounts of aniline, excitation dependent PL of PANI-GQD, area of hysteretic loop for different voltage scan ranges, photocurrent at 1 V under prolonged illumination. See DOI: 10.1039/c4nr07565j

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Ghoroury, Hussein S.; Yeh, Milton; Chen, J. C., E-mail: jc.chen@ostendo.com

Specially designed intermediate carrier blocking layers (ICBLs) in multi-active regions of III-nitride LEDs were shown to be effective in controlling the carrier injection distribution across the active regions. In principle, the majority of carriers, both holes and electrons, can be guided into targeted quantum wells and recombine to generate light of specific wavelengths at controlled current-densities. Accordingly we proposed and demonstrated a novel monolithic InGaN-based LED to achieve three primary colors of light from one device at selected current densities. This LED structure, which has three different sets of quantum wells separated with ICBLs for three primary red-green-blue (RGB) colors,more » was grown by metal-organic chemical vapor deposition (MOCVD). Results show that this LED can emit light ranging from 460 to 650 nm to cover the entire visible spectrum. The emission wavelength starts at 650 nm and then decreases to 460 nm or lower as the injection current increases. In addition to three primary colors, many other colors can be obtained by color mixing techniques. To the best of our knowledge, this is the first demonstration of monolithic full-color LED grown by a simple growth technique without using re-growth process.« less

Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

NASA Technical Reports Server (NTRS)

Lord, Kenneth; Woodyard, James R.

2002-01-01

The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

Design and characterization of poly(dimethylsiloxane)-based valves for interfacing continuous-flow sampling to microchip electrophoresis.

PubMed

Li, Michelle W; Huynh, Bryan H; Hulvey, Matthew K; Lunte, Susan M; Martin, R Scott

2006-02-15

This work describes the fabrication and evaluation of a poly(dimethyl)siloxane (PDMS)-based device that enables the discrete injection of a sample plug from a continuous-flow stream into a microchannel for subsequent analysis by electrophoresis. Devices were fabricated by aligning valving and flow channel layers followed by plasma sealing the combined layers onto a glass plate that contained fittings for the introduction of liquid sample and nitrogen gas. The design incorporates a reduced-volume pneumatic valve that actuates (on the order of hundreds of milliseconds) to allow analyte from a continuously flowing sampling channel to be injected into a separation channel for electrophoresis. The injector design was optimized to include a pushback channel to flush away stagnant sample associated with the injector dead volume. The effect of the valve actuation time, the pushback voltage, and the sampling stream flow rate on the performance of the device was characterized. Using the optimized design and an injection frequency of 0.64 Hz showed that the injection process is reproducible (RSD of 1.77%, n = 15). Concentration change experiments using fluorescein as the analyte showed that the device could achieve a lag time as small as 14 s. Finally, to demonstrate the potential uses of this device, the microchip was coupled to a microdialysis probe to monitor a concentration change and sample a fluorescein dye mixture.

Frequency conversion system

NASA Technical Reports Server (NTRS)

Sanders, Steven (Inventor); Lang, Robert J. (Inventor)

2001-01-01

Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

Relative Bioavailability of a Single 4-mg Dose of Somatropin Administered by Subcutaneous Injection or by Needle-free Device and Coadministered With the Growth Hormone Inhibitor Octreotide Acetate in Healthy Adult Subjects.

PubMed

Brimhall, Darin B; Petri, Niclas; D'Angelo, Pina

2018-05-01

Somatropin, used to treat growth hormone deficiency, has been traditionally administered by subcutaneous (SC) injection with needle and syringe. Needle-free devices offer ease of administration and may improve adherence and outcomes. This study evaluated the relative bioavailability of somatropin delivered with a needle-free device compared with traditional SC injection. In this randomized, single-dose, crossover study, healthy adults aged 18 to 35 years received single 4-mg doses of somatropin via a needle-free device or SC injection, along with octreotide to suppress endogenous growth hormone production. Blood samples were analyzed for serum somatropin and insulin-like growth factor-1 (IGF-1) concentrations over 24 hours after somatropin dosing. Pharmacokinetic and pharmacodynamic parameters were evaluated by using noncompartmental methods, and bioequivalence was determined based on ln transformation of the AUC 0-24 , AUC 0-∞ , C max , area under the effect-time curve from time 0 to 24 hours (AUEC 0-24 ), and maximum effect concentration (E max ). Bioequivalence was concluded if the 90% CIs of the needle-free device compared with the SC injection, constructed by using the two 1-sided hypotheses at the α = 0.05 level, for these pharmacokinetic/pharmacodynamic parameters fell within the 80.00% to125.00% regulatory acceptance range. A total of 57 subjects completed both study periods and were included in the pharmacokinetic analyses. Point estimates (90% CIs) of the geometric mean ratio (needle-free device/SC injection) based on serum somatropin were 1.013 (0.987-1.040) for AUC 0-24 , 1.012 (0.986-1.038) for AUC 0-∞ , and 1.200 (1.137-1.267) for C max . For IGF-1, baseline-corrected point estimates (90% CIs) were 0.901 (0.818-0.993) for AUEC 0-24 and 0.867 (0.795-0.946) for E max . Non-baseline-corrected values were 0.978 (0.953-1.004) for AUEC 0-24 and 0.953 (0.923-0.984) for E max . Both treatments were well tolerated; blood glucose levels increased in nearly all subjects (98.3%). All adverse events were mild and resolved spontaneously within 24 hours. Bioequivalence was shown for a single 4-mg dose of somatropin delivered by using a needle-free device compared with SC injection based on ln-transformed AUC 0-24 and AUC 0-∞ but not ln-transformed C max . Copyright © 2018 The Authors. Published by Elsevier Inc. All rights reserved.

Doped Interlayers for Improved Selectivity in Bulk Herterojunction Organic Photovoltaic Devices

DOE PAGES

Mauger, Scott A.; Glasser, Melodie P.; Tremolet de Villers, Bertrand J.; ...

2016-01-21

Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in inverted-architecture organic photovoltaic (OPV) than it is in a conventional-architecture OPV device due differences between the interfacial-PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the P3HT:ICBA bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p-type interlayer of P3HT+/acid- on top of the BHJ. Using x-raymore » absorption spectroscopy, Kelvin probe and ellipsometry measurements, this P3HT+/acid- layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density - voltage measurements show this doped interlayer reduces injected dark current while increasing both open-circuit voltage and fill factor through the creation of a more hole selective BHJ-PEDOT:PSS interface.« less

Microfluidic separation of motile sperm with millilitre-scale sample capacity

NASA Astrophysics Data System (ADS)

Nosrati, Reza; Vollmer, Marion; Eamer, Lise; Zeidan, Krista; San Gabriel, Maria C.; Zini, Armand; Sinton, David

2012-11-01

Isolating motile from non-motile spermatozoa has been a challenge since the establishment of in vitro fertilization. Microfluidic approaches have been employed for this purpose, but current devices are limited by low sample volume. Here, we present a high-throughput microfluidic device that separates spermatozoa from one millilitre of raw semen sample based on the hydrodynamic characteristics of swimming sperm in a confined geometry. The device consists of two layers: an outer injection ring on top aligned with a network of radial microchannels at the bottom guiding motile sperm into an inner collection chamber. This approach (1) maximizes exposure of the sperm to the fluid channels, (2) maximizes surface area density (3) prevents fluid flow bias, and (4) employs a non-Newtonian viscoelastic medium consistent with the in vivo environment. Tests with human and bull spermatozoa indicate an increase in motile sperm concentration from 62.2% in raw semen to 99.2% in separated sample combined with a higher incidence of normal morphology. DNA integrity testing is currently underway. In conclusion, we present an effective one-step procedure to perform semen purification and separation on a millilitre-scale with clinically relevant numbers.

High-performance silicon nanowire bipolar phototransistors

NASA Astrophysics Data System (ADS)

Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

2016-07-01

Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

PubMed

Kim, Soonkon; Choi, Pyungho; Kim, Sangsub; Park, Hyoungsun; Baek, Dohyun; Kim, Sangsoo; Choi, Byoungdeog

2016-05-01

We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

Influence of polymeric electron injection layers on the electrical properties of solution-processed multilayered polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Itoh, Eiji; Kurami, Kazuhiko

2016-02-01

In this study, we fabricated multilayered polymer-based light-emitting diodes (pLEDs) with various solution-processed electron-injection layers (EILs), and investigated the influence of the EILs on the electrical properties of pLEDs in indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT:PSS)/poly[(9,9-dioctylfluorene-alt-(1,4-phenylene((4-sec-butylphenyl)amino)-1,4-phenylene))] (TFB) (HTL)/poly(9,9-dioctylfluorene-alt-1,4-benzothiadiazole) (F8BT) (EML)/EIL/Al structures. We have used the quaternized ammonium π-conjugated polyelectrolyte derivative (poly[(9,9-di(3,3‧-N,N‧-trimethylammonium)propylfluorenyl-2,7-diyl)-co-(1,4-phenylene)]diiodide salt) (PF-PDTA), a mixture of PF-PDTA and CS2CO3, and the aliphatic-amine-based polymer poly(ethylene imine) (PEI) as solution-processed EILs, and compared them with LiF as a solvent-free EIL. The EILs enhanced the electron injection and improve the pLED performance. High external quantum efficiencies of nearly 4% were obtained in the pLEDs with the combination of a multilayered structure fabricated by a transfer printing technique and EILs of a PF-PDTA:CS2CO3 mixture and PEI. On the other hand, the device with PF-PDTA exhibited lower efficiency, higher driving voltage, and larger leakage current at lower voltage. The migration of ionic charges was suggested from the abnormal dielectric behaviors, and serious damage on the electrode material occurred when both an acid hole-injection layer (PEDOT:PSS) and PF-PDTA were used. On the other hand, the pLEDs with ultrathin PEI showed high performance and stable device operation in terms of the influence of ionic charges.

Fuzzy-Wavelet Based Double Line Transmission System Protection Scheme in the Presence of SVC

NASA Astrophysics Data System (ADS)

Goli, Ravikumar; Shaik, Abdul Gafoor; Tulasi Ram, Sankara S.

2015-06-01

Increasing the power transfer capability and efficient utilization of available transmission lines, improving the power system controllability and stability, power oscillation damping and voltage compensation have made strides and created Flexible AC Transmission (FACTS) devices in recent decades. Shunt FACTS devices can have adverse effects on distance protection both in steady state and transient periods. Severe under reaching is the most important problem of relay which is caused by current injection at the point of connection to the system. Current absorption of compensator leads to overreach of relay. This work presents an efficient method based on wavelet transforms, fault detection, classification and location using Fuzzy logic technique which is almost independent of fault impedance, fault distance and fault inception angle. The proposed protection scheme is found to be fast, reliable and accurate for various types of faults on transmission lines with and without Static Var compensator at different locations and with various incidence angles.

Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers.

PubMed

Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin

2015-05-27

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Interaction of rotating helical magnetic field with the HIST spherical torus plasmas

NASA Astrophysics Data System (ADS)

Kikuchi, Yusuke; Sugahara, Masato; Yamada, Satoshi; Yoshikawa, Tatsuya; Fukumoto, Naoyuki; Nagata, Masayoshi

2006-10-01

The physical mechanism of current drive by co-axial helicity injection (CHI) has been experimentally investigated on both spheromak and spherical torus (ST) configurations on the HIST device [1]. It has been observed that the n = 1 kink mode rotates toroidally with a frequency of 10-20 kHz in the ExB direction. It seems that the induced toroidal current by CHI strongly relates with the observed rotating kink mode. On the other hand, it is well known that MHD instabilities can be controlled or even suppressed by an externally applied helical magnetic field in tokamak devices. Therefore, we have started to install two sets of external helical coils in order to produce a rotating helical magnetic field on HIST. Mode structures of the generated rotating helical magnetic field and preliminary experimental results of the interaction of the rotating helical magnetic field with the HIST plasmas will be shown in the conference. [1] M. Nagata, et al., Physics of Plasmas 10, 2932 (2003)

A transverse bunch by bunch feedback system for Pohang Light Source upgrade

NASA Astrophysics Data System (ADS)

Lee, E.-H.; Kim, D.-T.; Huang, J.-Y.; Shin, S.; Nakamura, T.; Kobayashi, K.

2014-12-01

The Pohang Light Source upgrade (PLS-II) project has successfully upgraded the Pohang Light Source (PLS). The main goals of the PLS-II project are to increase the beam energy to 3 GeV, increase the number of insertion devices by a factor of two (20 IDs), increase the beam current to 400 mA, and at the same time reduce the beam emittance to below 10 nm by using the existing PLS tunnel and injection system. Among 20 insertion devices, 10 narrow gap in-vacuum undulators are in operation now and two more in-vacuum undulators are to be installed later. Since these narrow gap in-vacuum undulators are most likely to produce coupled bunch instability by the resistive wall impedance and limit the stored beam current, a bunch by bunch feedback system is implemented to suppress coupled bunch instability in the PLS-II. This paper describes the scheme and performance of the PLS-II bunch by bunch feedback system.

Thermal expansion as a precision actuator

NASA Astrophysics Data System (ADS)

Miller, Chris; Montgomery, David; Black, Martin; Schnetler, Hermine

2016-07-01

The UK ATC has developed a novel thermal actuator design as part of an OPTICON project focusing on the development of a Freeform Active Mirror Element (FAME). The actuator uses the well understood concept of thermal expansion to generate the required force and displacement. As heat is applied to the actuator material it expands linearly. A resistance temperature device (RTD) is embedded in the centre of the actuator and is used both as a heater and a sensor. The RTD temperature is controlled electronically by injecting a varying amount of current into the device whilst measuring the voltage across it. Temperature control of the RTD has been achieved to within 0.01°C. A 3D printed version of the actuator is currently being used at the ATC to deform a mirror but it has several advantages that may make it suitable to other applications. The actuator is cheap to produce whilst obtaining a high accuracy and repeatability. The actuator design would be suitable for applications requiring large numbers of actuators with high precision.

Near-field control and imaging of free charge carrier variations in GaN nanowires

NASA Astrophysics Data System (ADS)

Berweger, Samuel; Blanchard, Paul T.; Brubaker, Matt D.; Coakley, Kevin J.; Sanford, Norman A.; Wallis, Thomas M.; Bertness, Kris A.; Kabos, Pavel

2016-02-01

Despite their uniform crystallinity, the shape and faceting of semiconducting nanowires (NWs) can give rise to variations in structure and associated electronic properties. Here, we develop a hybrid scanning probe-based methodology to investigate local variations in electronic structure across individual n-doped GaN NWs integrated into a transistor device. We perform scanning microwave microscopy (SMM), which we combine with scanning gate microscopy to determine the free-carrier SMM signal contribution and image local charge carrier density variations. In particular, we find significant variations in free carriers across NWs, with a higher carrier density at the wire facets. By increasing the local carrier density through tip-gating, we find that the tip injects current into the NW with strongly localized current when positioned over the wire vertices. These results suggest that the strong variations in electronic properties observed within NWs have significant implications for device design and may lead to new paths to optimization.

Design and performance of a punch mechanism based pellet injector for alternative injection in the large helical device

NASA Astrophysics Data System (ADS)

Mishra, J. S.; Sakamoto, R.; Motojima, G.; Matsuyama, A.; Yamada, H.

2011-02-01

A low speed single barrel pellet injector, using a mechanical punch device has been developed for alternative injection in the large helical device. A pellet is injected by the combined operation of a mechanical punch and a pneumatic propellant system. The pellet shape is cylindrical, 3 mm in diameter and 3 mm in length. Using this technique the speed of the pellet can be controlled flexibly in the range of 100-450 m/s, and a higher speed can be feasible for a higher gas pressure. The injector is equipped with a guide tube selector to direct the pellet to different injection locations. Pellets are exposed to several curved parts with the curvature radii Rc = 0.8 and 0.3 m when they are transferred in guided tubes to the respective injection locations. Pellet speed variation with pressure at different pellet formation temperatures has been observed. Pellet intactness tests through these guide tubes show a variation in the intact speed limit over a range of pellet formation temperatures from 6.5 to 9.8 K. Pellet speed reduction of less than 6% has been observed after the pellet moves through the curved guide tubes.

Advanced Design Features of APR1400 and Realization in Shin Kori Construction Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

OH, S.J.; Park, K.C.; Kim, H.G.

2006-07-01

APR1400 adopted several advanced design features. To ensure their proper operation as a part of ShinKori 3,4 project, both experimental and analytical work are continuing. In this paper, work on the advanced design features related to enhanced safety is examined. APR1400 safety injection system consists of four independent trains which include four safety injection pump and tanks. A passive flow regulating device called fluidic device is installed in the safety injection tanks. Separate effect tests including a full scale fluidic device tests have been conducted. Integral system tests are in progress. Combination of these work with the analytical work usingmore » RELAP5/Mod3 would ensure the proper operation of the new safety injection systems. To mitigate severe accidents, hydrogen mitigation system using PARs and igniters is adopted. Also, active injection system and the streamlined insulation design are adopted to enhance the in-vessel retention capability with the external cooling of RPV strategy. Analytic work with supporting experiments is performed. We are certain that these preparatory work would help the successful adaptation of ADF in ShinKori project. (authors)« less

Portable device and method for determining permeability characteristics of earth formations

DOEpatents

Shuck, Lowell Z.

1977-01-01

The invention is directed to a device which is used for determining permeability characteristics of earth formations at the surface thereof. The determination of the maximum permeability direction and the magnitude of permeability are achieved by employing a device comprising a housing having a central fluid-injection port surrounded by a plurality of spaced-apart fluid flow and pressure monitoring ports radially extending from the central injection port. With the housing resting on the earth formation in a relatively fluid-tight manner as provided by an elastomeric pad disposed therebetween, fluid is injected through the central port into the earth formation and into registry with the fluid-monitoring ports disposed about the injection port. The fluid-monitoring ports are selectively opened and the flow of the fluid through the various fluid ports is measured so as to provide a measurement of flow rates and pressure distribution about the center hole which is indicative on the earth formation permeability direction and magnitude. For example, the azimuthal direction of the fluid-monitoring ports in the direction through which the greatest amount of injected fluid flows as determined by the lowest pressure distribution corresponds to the direction of maximum permeability in the earth formation.

Non-local electrical spin injection and detection in germanium at room temperature

NASA Astrophysics Data System (ADS)

Rortais, F.; Vergnaud, C.; Marty, A.; Vila, L.; Attané, J.-P.; Widiez, J.; Zucchetti, C.; Bottegoni, F.; Jaffrès, H.; George, J.-M.; Jamet, M.

2017-10-01

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain." The next generation electronics may operate on the spin of carriers in addition to their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the predicted long electron spin lifetime at room temperature. In this letter, we demonstrate injection of pure spin currents (i.e., with no associated transport of electric charges) in germanium, combined with non-local spin detection at 10 K and room temperature. For this purpose, we used a lateral spin valve with epitaxially grown magnetic tunnel junctions as spin injector and spin detector. The non-local magnetoresistance signal is clearly visible and reaches ≈15 mΩ at room temperature. The electron spin lifetime and diffusion length are 500 ps and 1 μm, respectively, the spin injection efficiency being as high as 27%. This result paves the way for the realization of full germanium spintronic devices at room temperature.

Chapter 8: Plasma operation and control

NASA Astrophysics Data System (ADS)

ITER Physics Expert Group on Disruptions, Control, Plasma, and MHD; ITER Physics Expert Group on Energetic Particles, Heating, Current and Drive; ITER Physics Expert Group on Diagnostics; ITER Physics Basis Editors

1999-12-01

Wall conditioning of fusion devices involves removal of desorbable hydrogen isotopes and impurities from interior device surfaces to permit reliable plasma operation. Techniques used in present devices include baking, metal film gettering, deposition of thin films of low-Z material, pulse discharge cleaning, glow discharge cleaning, radio frequency discharge cleaning, and in situ limiter and divertor pumping. Although wall conditioning techniques have become increasingly sophisticated, a reactor scale facility will involve significant new challenges, including the development of techniques applicable in the presence of a magnetic field and of methods for efficient removal of tritium incorporated into co-deposited layers on plasma facing components and their support structures. The current status of various approaches is reviewed, and the implications for reactor scale devices are summarized. Creation and magnetic control of shaped and vertically unstable elongated plasmas have been mastered in many present tokamaks. The physics of equilibrium control for reactor scale plasmas will rely on the same principles, but will face additional challenges, exemplified by the ITER/FDR design. The absolute positioning of outermost flux surface and divertor strike points will have to be precise and reliable in view of the high heat fluxes at the separatrix. Long pulses will require minimal control actions, to reduce accumulation of AC losses in superconducting PF and TF coils. To this end, more complex feedback controllers are envisaged, and the experimental validation of the plasma equilibrium response models on which such controllers are designed is encouraging. Present simulation codes provide an adequate platform on which equilibrium response techniques can be validated. Burning plasmas require kinetic control in addition to traditional magnetic shape and position control. Kinetic control refers to measures controlling density, rotation and temperature in the plasma core as well as in plasma periphery and divertor. The planned diagnostics (Chapter 7) serve as sensors for kinetic control, while gas and pellet fuelling, auxiliary power and angular momentum input, impurity injection, and non-inductive current drive constitute the control actuators. For example, in an ignited plasma, core density controls fusion power output. Kinetic control algorithms vary according to the plasma state, e.g. H- or L-mode. Generally, present facilities have demonstrated the kinetic control methods required for a reactor scale device. Plasma initiation - breakdown, burnthrough and initial current ramp - in reactor scale tokamaks will not involve physics differing from that found in present day devices. For ITER, the induced electric field in the chamber will be ~0.3V· m-1 - comparable to that required by breakdown theory but somewhat smaller than in present devices. Thus, a start-up 3MW electron cyclotron heating system will be employed to assure burnthrough. Simulations show that plasma current ramp up and termination in a reactor scale device can follow procedures developed to avoid disruption in present devices. In particular, simulations remain in the stable area of the li-q plane. For design purposes, the resistive V·s consumed during initiation is found, by experiments, to follow the Ejima expression, 0.45μ0 RIp. Advanced tokamak control has two distinct goals. First, control of density, auxiliary power, and inductive current ramping to attain reverse shear q profiles and internal transport barriers, which persist until dissipated by magnetic flux diffusion. Such internal transport barriers can lead to transient ignition. Second, combined use poloidal field shape control with non-inductive current drive and NBI angular momentum injection to create and control steady state, high bootstrap fraction, reverse shear discharges. Active n = 1 magnetic feedback and/or driven rotation will be required to suppress resistive wall modes for steady state plasmas that must operate in the wall stabilized regime for reactor levels of β >= 0.03.

Evaluation of an investigational wearable injector in healthy human volunteers.

PubMed

Torjman, Marc C; Machnicki, Robert; Lessin, Jennifer; Loeum, Channy; Steinberger, Douglas; Mycroft, Sarah; Joseph, Jeffrey I

2017-01-01

Introduction of a wearable device for subcutaneous delivery of larger volume bolus injections would encourage patient compliance and reduce the burden on healthcare services. With one such wearable device commercially available, this study examined the safety and functionality of an investigational device in volunteers. Four devices were applied to the subject's abdomen: 1) Investigational Device, 2) Investigational Device: subject movement, 3) Control Device: FDA-cleared syringe driver with FDA-cleared infusion set, 4) Control Device: FDA-cleared syringe driver attached to investigational device. Three milliliters of saline were infused through the four devices over 3 minutes. 84 devices were applied to 21 subjects. Three milliliters of saline were safely delivered subcutaneously from the investigational and control devices. Two control devices had occlusions and in each case the pump reached its high pressure limit of 12 psi. VAS pain measurements showed minimal pain for all subjects. Pain scores were significantly (p < 0.001) higher than baseline at the end of injection: mean pain level ranged from 2.0-22.0 mm. The investigational device performed as intended with minimal pain during needle insertion and infusion, and no leaking of fluid at the skin puncture site. Two occlusions occurred with the control devices.

Low Temperature Electrical Spin Injection from Highly Spin Polarized Co₂CrAl Heusler Alloy into p-Si.

PubMed

Kar, Uddipta; Panda, J; Nath, T K

2018-06-01

The low temperature spin accumulation in p-Si using Co2CrAl/SiO2 tunnel junction has been investigated in detail. The heterojunction has been fabricated using electron beam evaporation (EBE) technique. The 3-terminal contacts in Hanle geometry has been made for spin transport measurements. The electrical transport properties have been investigated at different isothermal conditions in the temperature range of 10-300 K. The current-voltage characteristics of the junction shows excellent rectifying magnetic diode like behaviour in lower temperature range (below 200 K). At higher temperature, the junction shows nonlinear behaviour without rectifying characteristics. We have observed spin accumulation signal in p-Si semiconductor using SiO2/Co2CrAl tunnel junction in the low temperature regime (30-100 K). Hence the highly spin polarized Full Heusler alloys compounds, like Co2CrAl etc., are very attractive and can act as efficient tunnel device for spin injection in the area of spintronics devices in near future. The estimated spin life time is τ = 54 pS and spin diffusion length inside p-Si is LSD = 289 nm at 30 K for this heterostructure.

Balancing the Electron and Hole Transfer for Efficient Quantum Dot Light-Emitting Diodes by Employing a Versatile Organic Electron-Blocking Layer.

PubMed

Jin, Xiao; Chang, Chun; Zhao, Weifeng; Huang, Shujuan; Gu, Xiaobing; Zhang, Qin; Li, Feng; Zhang, Yubao; Li, Qinghua

2018-05-09

The electron-blocking layer (EBL) is important to balance the charge carrier transfer and achieve highly efficient quantum dot light-emitting diodes (QLEDs). Here, we report the utilization of a soluble tert-butyldimethylsilyl chloride-modified poly( p-phenylene benzobisoxazole) (TBS-PBO) as an EBL for simultaneous good charge carrier transfer balance while maintaining a high current density. We show that the versatile TBS-PBO blocks excess electron injection into the quantum dots (QDs), thus leading to better charge carrier transfer balance. It also restricts the undesired QD-to-EBL electron-transfer process, which preserves the superior emission capabilities of the emitter. As a consequence, the TBS-PBO device delivers an external quantum efficiency (EQE) maximum of 16.7% along with a remarkable current density as high as 139 mA/cm 2 with a brightness of 5484 cd/m 2 . The current density of our device is higher than those of insulator EBL-based devices because of the higher conductivity of the TBS-PBO versus insulator EBL, thus helping achieve high luminance values ranging from 1414 to 20 000 cd/cm 2 with current densities ranging from 44 to 648 mA/cm 2 and EQE > 14%. We believe that these unconventional features of the present TBS-PBO-based QLEDs will expand the wide use of TBS-PBO as buffer layers in other advanced QLED applications.

Development of rotating magnetic field coil system in the HIST spherical torus device

NASA Astrophysics Data System (ADS)

Yoshikawa, T.; Kikuchi, Y.; Yamada, S.; Hashimoto, S.; Nishioka, T.; Fukumoto, N.; Nagata, M.

2007-11-01

Coaxial Helicity Injection (CHI) is one of most attractive methods to achieve non-inductive current drive in spherical torus devices. The current drive mechanism of CHI relies on MHD relaxation process of rotating kink behavior [1], so that there is a possibility to control the CHI by using an externally applied rotating magnetic field (RMF). We have recently started to develop a RMF coil system in the HIST spherical torus device. Eight coils are located above and below the midplane at four toroidal locations so that the RMF is resonant with n = 1 rotating kink mode driven by the CHI. In addition, the RMF coil set is installed inside a flux conserver of 5 mm thickness (cut-off frequency ˜ 170 Hz) so that the RMF penetrates into the plasma. The coil winding is made of 20 turns of enameled copper circular wires (1.5 mm^2 conductor cross section), covered with a thin stainless steal case of 0.5 mm thickness (cut-off frequency ˜ 710 kHz). The RMF system is driven by an IGBT inverter power supply (nominal current: 1 kA, nominal voltage: 1 kV) with an operating frequency band from 10 kHz to 30 kHz. The estimated amplitude of RMF neglecting effects of image current at the flux conserver is a few tens Gauss at around the magnetic axis. A preliminary experimental result will be shown in the conference. [1] M. Nagata, et al., Physics of Plasmas 10, 2932 (2003).

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Asymmetrical edges induced strong current-polarization in embedded graphene nanoribbons

NASA Astrophysics Data System (ADS)

Li, Kuanhong; Zhang, Xiang-Hua

2018-05-01

We investigate the electronic structures and transport properties of the embedded zigzag graphene nanoribbon (E-ZGNR) in hexagonal boron nitride trenches, which are achievable in recent experiments. Our first principles results show that the E-ZGNR has a significant enhanced conductivity relative to common ZGNRs due to the existence of asymmetrical edge structures. Moreover, only one spin-orientation electrons possess a widely opened band gap at the magnetic ground state with anti-ferromagnetic configuration, resulting in a full current-polarization at low bias region. Our findings indicate that the state-of-the-art embedding technology is quite useful for tuning the electronic structure of ZGNR and building possible spin injection and spin filter devices in spintronics.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Interplay of point defects, extended defects, and carrier localization in the efficiency droop of InGaN quantum wells light-emitting diodes investigated using spatially resolved electroluminescence and photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yue, E-mail: yuelin@fjirsm.ac.cn; Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002; Department of Electronic Science and Fujian Engineering Research Center for Solid-State Lighting, Xiamen University, Xiamen, Fujian 361005

2014-01-14

We perform both spatially resolved electroluminescence (SREL) as a function of injection current and spatially resolved photoluminescence (SRPL) as a function of excitation power on InGaN quantum well blue light-emitting diodes to investigate the underlying physics for the phenomenon of the external quantum efficiency (EQE) droop. SREL allows us to study two most commonly observed but distinctly different droop behaviors on a single device, minimizing the ambiguity trying to compare independently fabricated devices. Two representative devices are studied: one with macroscopic scale material non-uniformity, the other being macroscopically uniform, but both with microscopic scale fluctuations. We suggest that the EQE–currentmore » curve reflects the interplay of three effects: nonradiative recombination through point defects, carrier localization due to either In composition or well width fluctuation, and nonradiative recombination of the extended defects, which is common to various optoelectronic devices. By comparing SREL and SRPL, two very different excitation/detection modes, we show that individual singular sites exhibiting either particularly strong or weak emission in SRPL do not usually play any significant and direct role in the EQE droop. We introduce a two-level model that can capture the basic physical processes that dictate the EQE–current dependence and describe the whole operating range of the device from 0.01 to 100 A/cm{sup 2}.« less

Integration of On-Chip Peristaltic Pumps and Injection Valves with Microchip Electrophoresis and Electrochemical Detection

PubMed Central

Bowen, Amanda L; Martin, R. Scott

2010-01-01

A microfluidic approach that integrates peristaltic pumping from an on-chip reservoir with injection valves, microchip electrophoresis and electrochemical detection is described. Fabrication and operation of both the peristaltic pumps and injection valves were optimized to ensure efficient pumping and discrete injections. The final device uses the peristaltic pumps to continuously direct sample from a reservoir containing a mixture of analytes to injection valves that are coupled with microchip electrophoresis and amperometric detection. The separation and direct detection of dopamine and norepinephrine were possible with this approach and the utility of the device was demonstrated by monitoring the stimulated release of these neurotransmitters from a layer of cells introduced into the microchip. It is also shown that this pumping/reservoir approach can be expanded to multiple reservoirs and pumps, where one reservoir can be addressed individually or multiple reservoirs sampled simultaneously. PMID:20665914

Lithium wall conditioning by high frequency pellet injection in RFX-mod

NASA Astrophysics Data System (ADS)

Innocente, P.; Mansfield, D. K.; Roquemore, A. L.; Agostini, M.; Barison, S.; Canton, A.; Carraro, L.; Cavazzana, R.; De Masi, G.; Fassina, A.; Fiameni, S.; Grando, L.; Rais, B.; Rossetto, F.; Scarin, P.

2015-08-01

In the RFX-mod reversed field pinch experiment, lithium wall conditioning has been tested with multiple scopes: to improve density control, to reduce impurities and to increase energy and particle confinement time. Large single lithium pellet injection, lithium capillary-pore system and lithium evaporation has been used for lithiumization. The last two methods, which presently provide the best results in tokamak devices, have limited applicability in the RFX-mod device due to the magnetic field characteristics and geometrical constraints. On the other side, the first mentioned technique did not allow injecting large amount of lithium. To improve the deposition, recently in RFX-mod small lithium multi-pellets injection has been tested. In this paper we compare lithium multi-pellets injection to the other techniques. Multi-pellets gave more uniform Li deposition than evaporator, but provided similar effects on plasma parameters, showing that further optimizations are required.

Stability of quantum-dot excited-state laser emission under simultaneous ground-state perturbation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaptan, Y., E-mail: yuecel.kaptan@physik.tu-berlin.de; Herzog, B.; Schöps, O.

2014-11-10

The impact of ground state amplification on the laser emission of In(Ga)As quantum dot excited state lasers is studied in time-resolved experiments. We find that a depopulation of the quantum dot ground state is followed by a drop in excited state lasing intensity. The magnitude of the drop is strongly dependent on the wavelength of the depletion pulse and the applied injection current. Numerical simulations based on laser rate equations reproduce the experimental results and explain the wavelength dependence by the different dynamics in lasing and non-lasing sub-ensembles within the inhomogeneously broadened quantum dots. At high injection levels, the observedmore » response even upon perturbation of the lasing sub-ensemble is small and followed by a fast recovery, thus supporting the capacity of fast modulation in dual-state devices.« less

Photocurrent microscopy of contact resistance and charge carrier traps in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Liewald, C.; Reiser, D.; Westermeier, C.; Nickel, B.

2016-08-01

We use a pentacene transistor with asymmetric source drain contacts to test the sensitivity of scanning photocurrent microscopy (SPCM) for contact resistance and charge traps. The drain current of the device strongly depends on the choice of the drain electrode. In one case, more than 94% of the source drain voltage is lost due to contact resistance. Here, SPCM maps show an enhanced photocurrent signal at the hole-injecting contact. For the other bias condition, i.e., for ohmic contacts, the SPCM signal peaks heterogeneously along the channel. We argue from basic transport models that bright areas in SPCM maps indicate areas of large voltage gradients or high electric field strength caused by injection barriers or traps. Thus, SPCM allows us to identify and image the dominant voltage loss mechanism in organic field-effect transistors.

21 CFR 868.5120 - Anesthesia conduction catheter.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Anesthesia conduction catheter. 868.5120 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5120 Anesthesia conduction catheter. (a) Identification. An anesthesia conduction catheter is a flexible tubular device used to inject...

21 CFR 868.5120 - Anesthesia conduction catheter.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Anesthesia conduction catheter. 868.5120 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5120 Anesthesia conduction catheter. (a) Identification. An anesthesia conduction catheter is a flexible tubular device used to inject...

21 CFR 870.1800 - Withdrawal-infusion pump.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 21 Food and Drugs 8 2011-04-01 2011-04-01 false Withdrawal-infusion pump. 870.1800 Section 870...) MEDICAL DEVICES CARDIOVASCULAR DEVICES Cardiovascular Diagnostic Devices § 870.1800 Withdrawal-infusion pump. (a) Identification. A withdrawal-infusion pump is a device designed to inject accurately drugs...

21 CFR 868.5120 - Anesthesia conduction catheter.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 21 Food and Drugs 8 2014-04-01 2014-04-01 false Anesthesia conduction catheter. 868.5120 Section... (CONTINUED) MEDICAL DEVICES ANESTHESIOLOGY DEVICES Therapeutic Devices § 868.5120 Anesthesia conduction catheter. (a) Identification. An anesthesia conduction catheter is a flexible tubular device used to inject...

Power scaling and experimentally fitted model for broad area quantum cascade lasers in continuous wave operation

NASA Astrophysics Data System (ADS)

Suttinger, Matthew; Go, Rowel; Figueiredo, Pedro; Todi, Ankesh; Shu, Hong; Leshin, Jason; Lyakh, Arkadiy

2018-01-01

Experimental and model results for 15-stage broad area quantum cascade lasers (QCLs) are presented. Continuous wave (CW) power scaling from 1.62 to 2.34 W has been experimentally demonstrated for 3.15-mm long, high reflection-coated QCLs for an active region width increased from 10 to 20 μm. A semiempirical model for broad area devices operating in CW mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sublinearity of pulsed power versus current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall-plug efficiency can be achieved from 3.15 mm×25 μm devices with 21 stages of the same design, but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300 Å, pulsed rollover current density of 6 kA/cm2, and InGaAs waveguide layers, an optical power increase of 41% is projected. Finally, the model projects that power level can be increased to ˜4.5 W from 3.15 mm×31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

Continuous wave power scaling in high power broad area quantum cascade lasers

NASA Astrophysics Data System (ADS)

Suttinger, M.; Leshin, J.; Go, R.; Figueiredo, P.; Shu, H.; Lyakh, A.

2018-02-01

Experimental and model results for high power broad area quantum cascade lasers are presented. Continuous wave power scaling from 1.62 W to 2.34 W has been experimentally demonstrated for 3.15 mm-long, high reflection-coated 5.6 μm quantum cascade lasers with 15 stage active region for active region width increased from 10 μm to 20 μm. A semi-empirical model for broad area devices operating in continuous wave mode is presented. The model uses measured pulsed transparency current, injection efficiency, waveguide losses, and differential gain as input parameters. It also takes into account active region self-heating and sub-linearity of pulsed power vs current laser characteristic. The model predicts that an 11% improvement in maximum CW power and increased wall plug efficiency can be achieved from 3.15 mm x 25 μm devices with 21 stages of the same design but half doping in the active region. For a 16-stage design with a reduced stage thickness of 300Å, pulsed roll-over current density of 6 kA/cm2 , and InGaAs waveguide layers; optical power increase of 41% is projected. Finally, the model projects that power level can be increased to 4.5 W from 3.15 mm × 31 μm devices with the baseline configuration with T0 increased from 140 K for the present design to 250 K.

Generation and detection of dissipationless spin current in a MgO/Si bilayer

NASA Astrophysics Data System (ADS)

Lou, Paul C.; Kumar, Sandeep

2018-04-01

Spintronics is an analogue to electronics where the spin of the electron rather than its charge is functionally controlled for devices. The generation and detection of spin current without ferromagnetic or exotic/scarce materials are two of the biggest challenges for spintronics devices. In this study, we report a solution to the two problems of spin current generation and detection in Si. Using non-local measurement, we experimentally demonstrate the generation of helical dissipationless spin current using the spin-Hall effect. Contrary to the theoretical prediction, we observe the spin-Hall effect in both n-doped and p-doped Si. The helical spin current is attributed to the site-inversion asymmetry of the diamond cubic lattice of Si and structure inversion asymmetry in a MgO/Si bilayer. The spin to charge conversion in Si is insignificant due to weak spin-orbit coupling. For the efficient detection of spin current, we report spin to charge conversion at the MgO (1 nm)/Si (2 µm) (p-doped and n-doped) thin film interface due to Rashba spin-orbit coupling. We detected the spin current at a distance of  >100 µm, which is an order of magnitude larger than the longest spin diffusion length measured using spin injection techniques. The existence of spin current in Si is verified from the coercivity reduction in a Co/Pd multilayer due to spin-orbit torque generated by spin current from Si.

Towards electrical spin injection into LaAlO3-SrTiO3.

PubMed

Bibes, M; Reyren, N; Lesne, E; George, J-M; Deranlot, C; Collin, S; Barthélémy, A; Jaffrès, H

2012-10-28

Future spintronics devices will be built from elemental blocks allowing the electrical injection, propagation, manipulation and detection of spin-based information. Owing to their remarkable multi-functional and strongly correlated character, oxide materials already provide such building blocks for charge-based devices such as ferroelectric field-effect transistors (FETs), as well as for spin-based two-terminal devices such as magnetic tunnel junctions, with giant responses in both cases. Until now, the lack of suitable channel materials and the uncertainty of spin-injection conditions in these compounds had however prevented the exploration of similar giant responses in oxide-based lateral spin transport structures. In this paper, we discuss the potential of oxide-based spin FETs and report magnetotransport data that suggest electrical spin injection into the LaAlO(3)-SrTiO(3) interface system. In a local, three-terminal measurement scheme, we analyse the voltage variation associated with the precession of the injected spin accumulation driven by perpendicular or longitudinal magnetic fields (Hanle and 'inverted' Hanle effects). The spin accumulation signal appears to be much larger than expected, probably owing to amplification effects by resonant tunnelling through localized states in the LaAlO(3). We give perspectives on how to achieve direct spin injection with increased detection efficiency, as well on the implementation of efficient top gating schemes for spin manipulation.

Effects of interfacial stability between electron transporting layer and cathode on the degradation process of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Ta-Ya; Lee, Yong-Han; Song, Ok-Keun

2007-11-01

The authors have demonstrated that the increase of electron injection barrier height between tris(8-hydroxyquinoline)aluminum (Alq3) and LiF /Al cathode is one of the most critical parameters to determine the reliability of organic light-emitting diode with the typical structure of indium tin oxide/N ,N'-bis(naphthalen-1-yl)-N ,N'-bis(phenyl) benzidine/Alq3/LiF /Al. The electrical properties of several devices (hole only, electron only, and integrated double-layered devices) have been measured in the function of operating time to analyze the bulk and interface property changes. Bulk properties of trap energy and mobility in an organic layer have been estimated by using trap-charge-limited currents and transient electroluminescence measurements.

Diagnostic experiments at a 3 MeV test stand at Rutherford Appleton Laboratory (United Kingdom).

PubMed

Gabor, C; Faircloth, D C; Lee, D A; Lawrie, S R; Letchford, A P; Pozimski, J K

2010-02-01

A front end is currently under construction consisting of a H(-) Penning ion source (65 keV, 60 mA), low energy beam transport (LEBT), and radio frequency quadrupole (3 MeV output energy) with a medium energy beam transport suitable for high power proton applications. Diagnostics can be divided either in destructive techniques such as beam profile monitor, pepperpot, slit-slit emittance scanner (preferably used during commissioning) or nondestructive, permanently installed devices such as photodetachment-based techniques. Another way to determine beam distributions is a scintillator with charge-coupled device camera. First experiments have been performed to control the beam injection into the LEBT. The influence of beam parameters such as particle energy and space-charge compensation on the two-dimensional distribution and profiles will be presented.

Current at Metal-Organic Interfaces

NASA Astrophysics Data System (ADS)

Kern, Klaus

2012-02-01

Charge transport through atomic and molecular constrictions greatly affects the operation and performance of organic electronic devices. Much of our understanding of the charge injection and extraction processes in these systems relays on our knowledge of the electronic structure at the metal-organic interface. Despite significant experimental and theoretical advances in studying charge transport in nanoscale junctions, a microscopic understanding at the single atom/molecule level is missing. In the present talk I will present our recent results to probe directly the nanocontact between single molecules and a metal electrode using scanning probe microscopy and spectroscopy. The experiments provide unprecedented microscopic details of single molecule and atom junctions and open new avenues to study quantum critical and many body phenomena at the atomic scale. Implications for energy conversion devices and carbon based nanoelectronics will also be discussed.

Engineering aspects of the HT-6M Tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1986-05-01

The HT-6M is a medium-sized tokamak being built in China. The principal aim of the project is to study high-power auxiliary heating (1-MW neutral beam injection, 1-MW ion cyclotron resonance heating, and 100-kW electron cyclotron resonance heating), high-..beta.. experiments, the transport process, and the formation and diffusion process of impurities. The main device parameters are: major plasma radius R = 65 cm, minor plasma radius a = 20 cm, plasma current I/subP/ = 150 kA, discharge time tau = 150 ms, toroidal field B/subT/ = 15 kG. Simplicity of construction, accessibility to the plasma, reliability in operation, and convenience formore » maintenance were particularly emphasized in the design. The important design features of the device and power supply system are described.« less

First-in-human testing of a wirelessly controlled drug delivery microchip.

PubMed

Farra, Robert; Sheppard, Norman F; McCabe, Laura; Neer, Robert M; Anderson, James M; Santini, John T; Cima, Michael J; Langer, Robert

2012-02-22

The first clinical trial of an implantable microchip-based drug delivery device is discussed. Human parathyroid hormone fragment (1-34) [hPTH(1-34)] was delivered from the device in vivo. hPTH(1-34) is the only approved anabolic osteoporosis treatment, but requires daily injections, making patient compliance an obstacle to effective treatment. Furthermore, a net increase in bone mineral density requires intermittent or pulsatile hPTH(1-34) delivery, a challenge for implantable drug delivery products. The microchip-based devices, containing discrete doses of lyophilized hPTH(1-34), were implanted in eight osteoporotic postmenopausal women for 4 months and wirelessly programmed to release doses from the device once daily for up to 20 days. A computer-based programmer, operating in the Medical Implant Communications Service band, established a bidirectional wireless communication link with the implant to program the dosing schedule and receive implant status confirming proper operation. Each woman subsequently received hPTH(1-34) injections in escalating doses. The pharmacokinetics, safety, tolerability, and bioequivalence of hPTH(1-34) were assessed. Device dosing produced similar pharmacokinetics to multiple injections and had lower coefficients of variation. Bone marker evaluation indicated that daily release from the device increased bone formation. There were no toxic or adverse events due to the device or drug, and patients stated that the implant did not affect quality of life.

Influence of broadening and high-injection effects on GaAs-AlGaAs quantum well lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blood, P.; Colak, S.; Kucharska, A.I.

1988-08-01

The authors have calculated gain spectra and gain-current relations for GaAs-AlGaAs quantum well lasers using a model which incorporates a phenomenological description of bandgap narrowing due to many-body effects at high injection, transmission broadening by a carrier-density-dependent intraband scattering process, and broadening of the density of states function by fluctuations in the well width. The justification for including all these phenomena is made by examining spontaneous emission spectra observed through contact windows on quantum well layers. Using reasonable values of the parameters describing these effects, the model predicts correctly the observed lengthening of the laser emission wavelength with respect tomore » the absorption edge and correctly describes the variation of this wavelength, which they have observed for a set of devices with different numbers of quantum wells and the same well width. For a single GaAs quantum well laser 25 A wide, with the same parameters, the model predicts an increase in threshold current by a factor of 2.5 compared to an ideal quantum well without these effects.« less

Subcutaneous Interferon β-1a Administration by Electronic Auto-injector is Associated with High Adherence in Patients with Relapsing Remitting Multiple Sclerosis in a Real-life Study.

PubMed

Järvinen, Elina; Multanen, Juha; Atula, Sari

2017-02-20

The objective was to investigate adherence measured by an electronic auto-injector device, and self-reported adherence and treatment convenience in subjects with relapsing remitting multiple sclerosis (RRMS), using an electronic auto-injector Rebismart ® to self-inject interferon β-1a. Thirty one patients with RRMS using the electronic auto-injector Rebismart ® for self-injecting interferon β-1a subcutaneously three times weekly were included in a real-life clinical multicenter study for 24 weeks in Finland. Mean adherence reported by the device and mean self-assessment of adherence were studied. Reasons for missing injections and treatment convenience were assessed. Association between adherence and gender and age were studied. The mean adherence calculated from the device data was 93.5%. The mean self-assessment of adherence was 96.6%. The most common reason for missing an injection was forget-fulness. Adherence (measured by the device) was not changed over time. In the high adherence group there were more females and young patients (<30 years of age). The auto-injector was found to substantially ease the treatment by 90% of the patients. The electronic auto-injector was associated with high adherence to treatment. The device was found to ease the patient's treatment and it was perceived as easy to use. It is a convenient tool to assess patient's adherence to treatment.

Results from an international multicenter trial evaluating the ease-of-use of and preference for a newly developed disposable injection pen for the treatment of growth hormone deficiency in treatment-naïve children and adults

PubMed Central

Pleil, Andreas M; Darendeliler, Feyza; Dörr, Helmuth G; Hutchinson, Katherine; Wollmann, Hartmut A

2014-01-01

Previous research has reported that ease of use of and preference for a delivery device are associated with greater patient compliance – an important factor in achieving optimal therapeutic results. The objective of this study was to assess the ease-of-use of a new disposable pen (GoQuick®, Pfizer, Inc.) versus the current reusable pen (GENOTROPIN Pen®, Pfizer, Inc.) to inject a daily dose of recombinant DNA origin human growth hormone, Genotropin® (somatropin) in standard practice. In this randomized, crossover, multicenter, multinational, open-label study, ease-of-use of and preference for the two pens were assessed in three treatment-naïve populations: 1) parents of very young children; 2) parent–child dyads; and 3) adults via use of a validated self-report Injection Pen Assessment Questionnaire (IPAQ) after 2 months of at-home-use experience. The primary endpoint was the proportion of participants who reported the new disposable pen to be no different from or easier to use than the current reusable pen. Safety was also assessed and reported according to local legal requirements. Of the 120 screened patients, 119 were included in the ease-of-use analysis and all were included in the safety analyses. In all, 67.2% found the new somatropin disposable pen to be no different from or easier to use than the reusable pen (95% confidence interval: 58.8–75.7). Most adverse events were mild or moderate. No deaths or device- or treatment-related serious adverse events were reported. These results suggest that improvements made to the reusable somatropin pen are tangible and recognizable to treatment-naïve patients and their caregivers, child–caregiver dyads, and adults, and may positively impact continued compliance with therapy. Registry information ClinicalTrials.gov identifier: NCT01112865. PMID:24748824

A graphene solution to conductivity mismatch: spin injection from ferromagnetic metal/graphene tunnel contacts into silicon

NASA Astrophysics Data System (ADS)

van't Erve, Olaf

2014-03-01

New paradigms for spin-based devices, such as spin-FETs and reconfigurable logic, have been proposed and modeled. These devices rely on electron spin being injected, transported, manipulated and detected in a semiconductor channel. This work is the first demonstration on how a single layer of graphene can be used as a low resistance tunnel barrier solution for electrical spin injection into Silicon at room temperature. We will show that a FM metal / monolayer graphene contact serves as a spin-polarized tunnel barrier which successfully circumvents the classic metal / semiconductor conductivity mismatch issue for electrical spin injection. We demonstrate electrical injection and detection of spin accumulation in Si above room temperature, and show that the corresponding spin lifetimes correlate with the Si carrier concentration, confirming that the spin accumulation measured occurs in the Si and not in interface trap states. An ideal tunnel barrier should exhibit several key material characteristics: a uniform and planar habit with well-controlled thickness, minimal defect / trapped charge density, a low resistance-area product for minimal power consumption, and compatibility with both the FM metal and semiconductor, insuring minimal diffusion to/from the surrounding materials at temperatures required for device processing. Graphene, offers all of the above, while preserving spin injection properties, making it a compelling solution to the conductivity mismatch for spin injection into Si. Although Graphene is very conductive in plane, it exhibits poor conductivity perpendicular to the plane. Its sp2 bonding results in a highly uniform, defect free layer, which is chemically inert, thermally robust, and essentially impervious to diffusion. The use of a single monolayer of graphene at the Si interface provides a much lower RA product than any film of an oxide thick enough to prevent pinholes (1 nm). Our results identify a new route to low resistance-area product spin-polarized contacts, a crucial requirement enabling future semiconductor spintronic devices, which rely upon two-terminal magnetoresistance, including spin-based transistors, logic and memory.

GaN light-emitting device based on ionic liquid electrolyte

NASA Astrophysics Data System (ADS)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Evolution of the global use of unsafe medical injections, 2000-2010.

PubMed

Pépin, Jacques; Abou Chakra, Claire Nour; Pépin, Eric; Nault, Vincent

2013-01-01

Since 1999, substantial efforts have been made by the international community to reduce the risks associated with unsafe injections, through ministries of health, international donors, the World Health Organization and the Safe Injection Global Network. The present study attempted to measure the progress, or lack thereof, made over the 2000-2010 decade in reducing unsafe injections in ten regions of the world corresponding to developing and transitional economies. Data about the number of injections per person per year and the proportion of re-use of syringes and needles were obtained for 2010, mainly from population surveys, and compared with previous estimates for 2000 which had used various sources of information including injection safety assessments, population surveys and published studies on injection practices. From 2000 to 2010, in developing countries and transitional economies, the average number of injections per person per year decreased from 3.40 to 2.88, while the proportion of re-use of injection devices dropped from 39.8% to 5.5%. Combining both factors the number of unsafe injections per person per year decreased from 1.35 to 0.16. Even if substantial progress has been made, the Eastern Mediterranean region remains problematic, with 0.57 unsafe injections per person per year. In sub-Saharan Africa and Latin America, people now receive on average only 0.04-0.05 unsafe injections per year. Substantial progress has been made in reducing the number of unsafe injections in developing countries and transitional economies, essentially through a reduction in the re-use of injection devices. In some regions, elimination of unsafe injections might become a reasonable goal.

Compact silicon photonic resonance-assisted variable optical attenuator

DOE PAGES

Wang, Xiaoxi; Aguinaldo, Ryan; Lentine, Anthony; ...

2016-11-17

Here, a two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. Finally, we derive and discuss a simple thermal-resistance model in explanation of these effects.

Room temperature polariton light emitting diode with integrated tunnel junction.

PubMed

Brodbeck, S; Jahn, J-P; Rahimi-Iman, A; Fischer, J; Amthor, M; Reitzenstein, S; Kamp, M; Schneider, C; Höfling, S

2013-12-16

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement.

Distributed-feedback Terahertz Quantum-cascade Lasers with Laterally Corrugated Metal Waveguides

NASA Technical Reports Server (NTRS)

Williams, Benjamin S.; Kumar, Sushil; Hu, Qing; Reno, John L.

2005-01-01

We report the demonstration of distributed-feedback terahertz quantum-cascade lasers based on a first-order grating fabricated via a lateral corrugation in a double-sided metal ridge waveguide. The phase of the facet reflection was precisely set by lithographically defined facets by dry etching. Single-mode emission was observed at low to moderate injection currents, although multimode emission was observed far beyond threshold owing to spatial hole burning. Finite-element simulations were used to calculate the modal and threshold characteristics for these devices, with results in good agreement with experiments.

Compact silicon photonic resonance-sssisted variable optical attenuator.

PubMed

Wang, Xiaoxi; Aguinaldo, Ryan; Lentine, Anthony; DeRose, Christopher; Starbuck, Andrew L; Trotter, Douglas; Pomerene, Andrew; Mookherjea, Shayan

2016-11-28

A two-part silicon photonic variable optical attenuator is demonstrated in a compact footprint which can provide a high extinction ratio at wavelengths between 1520 nm and 1620 nm. The device was made by following the conventional p-i-n waveguide section by a high-extinction-ratio second-order microring filter section. The rings provide additional on-off contrast by utilizing a thermal resonance shift, which harvested the heat dissipated by current injection in the p-i-n junction. We derive and discuss a simple thermal-resistance model in explanation of these effects.

The rare isotope beams production at the Texas A and M university Cyclotron Institute

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabacaru, G.; May, D. P.; Chubarian, G.

2013-04-19

The Cyclotron Institute at Texas A and M initiated an upgrade project for the production of radioactive-ion beams that incorporates a light-ion guide (LIG) and a heavy-ion guide coupled (HIG) with an Electron Cyclotron Resonance Ion Source (ECRIS) constructed for charge-boosting (CB-ECRIS). This scheme is intended to produce radioactive beams suitable for injection into the K500 superconducting cyclotron. The current status of the project and details on the ion sources and devices used in the project is presented.

Effect of device package on optical, spectral, and thermal properties of InGaN/GaN near-ultraviolet lateral light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Soo Hyun; Guan, Xiang-Yu; Jeon, Soo-Kun; Yu, Jae Su

2017-09-01

We investigated the package effect on the temperature-dependent optical and spectral characteristics of InGaN/GaN near-ultraviolet (NUV) lateral light-emitting diodes (LLEDs) on the metal heatsink (MH) and package (PKG) in the injection current range of 0 - 500 mA at 298 and 358 K. For the NUV LLEDs on the MH, the device characteristics reflected directly its chip performance. For the NUV LLEDs on the PKG, the rapidly varied spectral shift as well as the reduced device efficiency was observed due to the increased number of layers with relatively low thermal conductivities. The junction temperature ( T j ) and thermal resistance of the NUV LLEDs on the PKG were also significantly increased compared to the NUV LLEDs on the MH. The three-dimensional heat transfer simulations for both the devices were carried out to obtain the temperature distributions by finite element method. The theoretically calculated T j values showed a good agreement with the experimentally measured T j values.

Impact of charge carrier injection on single-chain photophysics of conjugated polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofmann, Felix J.; Vogelsang, Jan, E-mail: jan.vogelsang@physik.uni-regensburg.de; Lupton, John M.

Charges in conjugated polymer materials have a strong impact on the photophysics and their interaction with the primary excited state species has to be taken into account in understanding device properties. Here, we employ single-molecule spectroscopy to unravel the influence of charges on several photoluminescence (PL) observables. The charges are injected either stochastically by a photochemical process or deterministically in a hole-injection sandwich device configuration. We find that upon charge injection, besides a blue-shift of the PL emission and a shortening of the PL lifetime due to quenching and blocking of the lowest-energy chromophores, the non-classical photon arrival time distributionmore » of the multichromophoric chain is modified towards a more classical distribution. Surprisingly, the fidelity of photon antibunching deteriorates upon charging, whereas one would actually expect the opposite: the number of chromophores to be reduced. A qualitative model is presented to explain the observed PL changes. The results are of interest to developing a microscopic understanding of the intrinsic charge-exciton quenching interaction in devices.« less

Research on the Injection Performance of a Novel Lubricating Device Based on Piezoelectric Micro-Jet Technology

NASA Astrophysics Data System (ADS)

Li, Kai; Liu, Jun-kao; Chen, Wei-shan; Ye, Le; Zhang, Lu

2016-08-01

In order to solve the problem of lubrication failure in bearing systems, a novel lubricating device which can achieve drop-on-demand lubrication is proposed based on piezoelectric micro-jet technology. The injection performance of the novel piezoelectric micro-jet lubricating device are analyzed in this paper. The influences of the fluid-structure interaction to the working frequency are studied by comparing the results of tests with simulations. A method used to forecast the working frequency of the micro-jet is proved to be available. A velocity inlet boundary model at the nozzle is derived under the assumption that the lubricating oil cannot be pressed. Combined with this model, the influences of density, dynamic viscosity and surface tension of the lubricating oil on the injection performance are discussed according to the simulation results. An experiment on the injection performance of the micro-jet for ejecting lubricating oil with different dilution ratios is performed. The recommended excitations are given for ejecting lubricating oil with different properties by analyzing the results.

High Power OPO Laser and wavelength-controlled system for 1.6μm CO2-DIAL

NASA Astrophysics Data System (ADS)

Abo, M.; Nagasawa, C.; Shibata, Y.

2009-12-01

Unlike the existing 2.0μm CO2-DIAL, a high-energy pulse laser operating in the 1.6μm absorption band of CO2 has not been realized. Quasi phase matching (QPM) devices have high conversion efficiency and high beam quality due to their higher nonlinear optical coefficient. We adapt the PPMgLT crystal as the QPM device. The PPMgLT crystal had 3mm × 3mm apertures, and the periodically poled period was 30.9 μm, with the duty ratio close to the ideal value of 0.5. The beam quality of the pumping laser was exceed M2 ≥1.2. The repetition rate was 400 Hz and the energy was 35 mJ. The pumping laser pulse was injection-seeded by the continuous-wave (CW) fiber laser, which had a narrow spectrum. The pulse pumped the PPMgLT crystal in the ring cavity with a single pass through the dielectric mirror. The PPMgLT crystal was mounted on a copper holder, and the temperature was maintained at 40 °C using a Peltier module. The holder’s temperature was stabilized to within 0.01 °C when the copper holder was covered with a plastic case. The OPO ring cavity was a singly resonant oscillator optimized for the signal wave. Single-frequency oscillation of the PPMgLT OPO was achieved by injection seeding, as described in the following. The injection seeder was a DFB laser having a power of 30mW with a 1MHz oscillation spectrum. Their oscillation wavelength was coarse tuned by temperature and fine tuned by adjusting injection currents. The partial power of the online wavelength was split in the wavelength control unit. We locked the DFB laser as an injection seeder of the online wavelength onto the line center by referencing the fiber coupled multipath gas cell (path length 800mm) containing pure CO2 at a pressure of 700 Torr. Stabilization was estimated to within 1.8MHz rms of the line center of the CO2 absorption line by monitoring the feedback signal of a wavelength-controlled unit. Injection seeding of the PPMgLT OPO was performed by matching the cavity length to the seeder wavelength for each oscillation pulse. The on-line and off-line wavelengths were injected into the OPO cavity through its output mirror. The injection seeder could be automatically switched by applying the TTL trigger to an optical fiber switch. A typical power of 8mW was injected into the cavity. The OPO cavity length was controlled as follows. A slope voltage was applied to the piezoelectric element mounted on the cavity mirror. If the longitudinal mode of the cavity was closed at the wavelength of the injection seeder, the electrical signal monitored by the photodiode would be maximized. The CW laser beam was injected from the output coupler to control the oscillation wavelength. The maximum output energy of 12mJ at 400 Hz was observed at 35mJ of pumping laser energy. The slope efficiency was 43.7%. This output energy and this repetition rate were the highest achieved so far. No damage was observed even after 1 h of operation. Therefore higher-energy operations can be expected with this device if the beam quality of the pumping laser is improved. This work was financially supported by the System Development Program for Advanced Measurement and Analysis by the JST.

Design and Analysis of a Continuous Split Typed Needle-Free Injection System for Animal Vaccination.

PubMed

Chen, Kai; Pan, Min; Liu, Tingting

2017-01-01

Liquid needle-free injection devices (NFIDs) employ a high-velocity liquid jet to deliver drugs and vaccine through transdermal injection. NFIDs for animal vaccination are more complicated than those used for human beings for their much larger and more flexible power sources, as well as rapid, repetitive and continuous injection features. In the paper, spring-powered NFID is designed for animal vaccine injection. For convenience, the device is a split into a power source and handheld injector. A mathematical model is proposed to calculate the injection pressure, taking into the account pressure loss and the strain energy loss in the bendable tube due to elastic deformation. An experimental apparatus was build to verify the calculation results. Under the same system conditions, the calculation results of the dynamic injection pressure match the experimental results. It is found that the bendable tube of the split typed NFID has significant impact on the profile of the injection pressure. The initial peak pressure is less than the initial peak pressure of NFID without bendable tube, and there is occurrence time lag of the peak pressure. The mathematical model is the first attempt to reveal the relationship between the injection pressure and the system variables of split typed NFID.